TW201947069A - Polycrystalline furnace device - Google Patents

Abstract

A polycrystalline furnace device including a furnace body, an insulation component, a melting component, a heat exchanger, a closing mechanism, and a porous plate is provided. The furnace body has a cooling system and a plurality of heaters. The insulation component is disposed in the furnace body and has an opening. The melting component is disposed in the insulation component, and a bottom of the melting component corresponds to the opening. The heat exchanger is disposed the bottom. The opening and closing mechanism is disposed outside of the insulation component and has at least one baffle. The at least one baffle is adapted to be opened or closed for exposing or insolating the opening. The porous plate is disposed between the heat exchanger and the opening and closing mechanism.

Description

Polycrystalline furnace device

The present invention relates to a polycrystalline furnace, and more particularly, to a polycrystalline furnace device for growing crystals.

In the field of semiconductor component production, polycrystalline furnaces are equipment used to produce polycrystalline silicon gallium. The existing polycrystalline furnace includes a furnace body and a crucible disposed in the furnace body, and the crucible is used to heat the high-purity polycrystalline silicon to a molten state. Subsequently, a cooling step is performed, and the crucible is cooled so that the polycrystalline silicon in the molten state is gradually solidified to form crystals, and finally, a desired crystal grate is obtained.

In order to reduce the power consumption when the crucible is heated, an existing polycrystalline furnace will be provided with a heat insulation component at an interval between the crucible and the heat exchanger, so that thermal energy can be maintained in the heat insulation component to maintain the heating temperature of the crucible. When the cooling step is performed, the heat insulation component is opened upward to expose the gap around the bottom of the crucible to the cooling system, and the heat radiated by the crucible is transferred to the cooling system fluid through the heat exchanger. According to this, the polycrystalline silicon in the molten state is gradually cooled and starts to grow from a portion near the bottom of the crucible.

However, the existing polycrystalline furnaces have the following disadvantages: 1. During the heat dissipation process of the heat exchanger at the bottom of the crucible, the heat dissipation direction is not vertically distributed at the bottom of the crucible, so that the solid-liquid interface of the polycrystalline silicon cannot be kept horizontal during the crystallization process, which affects the crystal.碇 Quality. 2. When the heat dissipation component is turned on, the thermal energy at the bottom of the crucible and around the crucible is also lost, which leads to an increase in the energy loss of the polycrystalline furnace.

In summary, it can be seen that how to improve the growth quality of the crystallites and reduce the energy consumption has become an important issue to be solved by the present invention.

The invention provides a polycrystalline silicon furnace device, which can improve the quality of the crystal growth of the crystal gallium and reduce the energy loss.

A polycrystalline furnace device of the present invention includes a furnace body, a heat-insulating component, a melting component, a heat exchanger, an opening mechanism, and a perforated plate. The furnace body has a cooling system and a plurality of heaters. The heat insulation component is disposed in the furnace body, and the heat insulation component has an opening. The melting component is disposed in the heat-insulating component and a bottom of the melting component corresponds to the opening. The heat exchanger is disposed at the bottom of the melting module. The opening and closing mechanism is disposed outside the heat insulation component and includes at least one baffle. The at least one baffle is adapted to be opened or closed to expose or isolate the opening. The perforated plate is disposed between the heat exchanger and the opening and closing mechanism. Wherein, when at least one baffle is opened and the opening is exposed, the heat radiated by the melting component is transferred from the heat exchanger through the perforated plate and reaches the cooling system.

In an embodiment of the present invention, the above-mentioned heat insulation component includes at least an upper heat insulation plate, a side heat insulation plate, and a lower heat insulation plate. The upper heat insulation plate is located on the top of the fused component, and the side heat insulation plate, the upper The heat insulation plate and the lower heat insulation plate surround the outer side of the melting component, the lower heat insulation plate is located below the heat exchanger, and the perforated plate is disposed between the lower heat insulation plate and the heat exchanger.

In an embodiment of the present invention, the above-mentioned lower heat insulation plate includes a plurality of first perforations and a plurality of second perforations, the heat exchanger includes a plurality of support feet, and the plurality of support feet abut the lower heat insulation plate and are Corresponding to the plurality of first perforations, the plurality of second perforations are respectively disposed between the plurality of first perforations.

In an embodiment of the present invention, the above-mentioned heat insulation component includes a plurality of auxiliary heat insulation materials, and the plurality of auxiliary heat insulation materials abut between the lower heat insulation plate and the bottom of the melting component, and are attached to the heat exchanger. An outer wall surface.

In an embodiment of the present invention, the above-mentioned baffle includes two first baffles and two second baffles. The two second baffles are located between the two first baffles and the perforated plate. A first direction is relatively far away or relatively close, and two second baffles are relatively far away or relatively close along a second direction perpendicular to the first direction.

In an embodiment of the present invention, the aforementioned porous plate includes a plurality of first heat dissipation holes and a plurality of second heat dissipation holes, the plurality of first heat dissipation holes are disposed in a central region of the porous plate, and the plurality of second heat dissipation holes are disposed in The periphery of the plurality of first heat dissipation holes, and a second aperture of each second heat dissipation hole is larger than a first aperture of each first heat dissipation hole.

In an embodiment of the present invention, the above-mentioned cooling system includes an inflow pipeline, a first-stage outlet pipeline, and a heat radiation area. The heat radiation area communicates with the inflow pipeline and the outflow pipeline, respectively, and the heat radiation area is located under the opening and closing mechanism, and a cooling water passes through the inflow pipeline. Enter the heat dissipation area to absorb heat, and then leave the heat dissipation area through the outflow pipeline.

In an embodiment of the present invention, the above-mentioned cooling system includes a heat exchange element, which is disposed on the heat dissipation area and aligned with the perforated plate.

In an embodiment of the present invention, the above-mentioned melting assembly includes a carrier, a crucible, and an air inlet pipe. The carrier includes a plurality of side plates, a bottom plate and an upper cover plate. The crucible is located inside the carrier. The air inlet pipe communicates with the upper cover. The heat exchanger is arranged between the bottom plate of the carrier and the perforated plate.

Based on the above, the polycrystalline silicon furnace device of the present invention is used for the manufacture of crystal cymbals, and the perforated plate is exposed or isolated through the opening or closing of the baffle. When the perforated plate is exposed, the heat radiated by the molten component is transferred from the heat exchanger through the perforated plate to the cooling system to start cooling and cooling and grow. The restriction of the direction of heat radiation transmission by the porous plate can improve the phenomenon of uneven heat dissipation during the growth of the crystal, which can maintain the level of the solid-liquid interface during the growth of the crystal, thereby improving the quality of the crystallite.

In addition, the polycrystalline silicon furnace device of the present invention only transmits the heat radiant heat from the bottom of the melting component through the perforated plate, so the remaining thermal energy of the melting component can still be kept in the heat insulation component, so that the heating power of the heater does not need to be greatly improved to Maintaining the temperature of the fused component can also effectively reduce the energy loss of the cooling system during heat dissipation.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic view of a baking state of a polycrystalline silicon furnace device according to an embodiment of the present invention. FIG. 2A is a schematic view of a crystal growth state of the polycrystalline-crystal furnace apparatus of FIG. 1. FIG. FIG. 2B is a schematic diagram illustrating a connection between a perforated plate and a splitting assembly of the polycrystalline silicon furnace device of FIG. 2A. FIG. 2C is a schematic view showing an opened state of the opening and closing assembly of the polycrystalline silicon furnace device of FIG. 2A.

Referring to FIG. 1 and FIG. 2A, the polycrystalline silicon furnace device 100 includes a furnace body 110, a heat insulation component 120, a melting component 130, a heat exchanger 140, an opening mechanism 150, and a perforated plate 121. The polycrystalline silicon furnace device 100 is used for heating the silicon material to a molten state, and then forming a crystal grain by a directional growth method. The directional growth method is briefly described as follows. The bottom of the polycrystalline silicon furnace device 100 is used for heat dissipation and cooling, so that the molten silicon M gradually cools and solidifies from the bottom to the top, and forms polycrystalline silicon S crystals.

In this embodiment, the furnace body 110 is made of, for example, a metal material or other materials with high temperature resistance, and includes a cooling system 111 and a plurality of heaters 112. The cooling system 111 is disposed inside the furnace body 110 and is used to absorb heat J. The plurality of heaters 112 are, for example, three and are disposed in the furnace body 110 and are electrically coupled to an external power source for converting electrical energy into thermal energy. For example, the heater 112 is, for example, a radiant heater that transmits heat through infrared rays, a convection heater that transmits heat through air, or other types of electric heaters, which are not limited in the present invention.

The heat insulation component 120 is disposed in the furnace body 110 and has an opening 126. For example, the heat insulation component 120 is made of a thermal insulation material. The melting component 130 is disposed in the heat insulation component 120 and a bottom 1301 of the melting component 130 corresponds to the opening 126. In this embodiment, the porous plate 121 is disposed between the heat exchanger 140 and the opening and closing mechanism 150 and is spaced apart from the melting component 130 in parallel, so that the melting component 130 and the porous plate 121 have a vertical distance. In this embodiment, the melting assembly 130 includes a carrier 131, a crucible 132, and an air inlet pipe 133. The carrier 131 is composed of a plurality of side plates 134, a bottom plate 135, and an upper cover plate 136. The crucible 132 is located in the carrier 131, and the air inlet pipe 133 communicates with the upper cover plate 136. The plurality of heaters 112 transfer the generated heat J to the carrier 131, and then heat the polycrystalline silicon S in the crucible 132 to form a molten state through the heat conduction of the carrier 131. The air inlet pipe 133 is, for example, a gas required for supplying heat or crystal growth.

The heat exchanger 140 is disposed between the bottom plate 135 and the perforated plate 121 of the carrier 131, wherein the heat exchanger 140 serves as a heat dissipation medium between the carrier 131 of the fusion module 130 and the cooling system 111, and is used to heat the heat of the fusion module 130. The radiated heat J is transferred outward. In this embodiment, the heat exchanger 140 is, for example, a graphite material or other materials that are resistant to high temperatures and have high thermal conductivity.

The opening and closing mechanism 150 is disposed outside the heat insulation component 120 and includes a baffle 151 and a driving member 152. The driving member 152 is, for example, a plurality of motors, so as to drive the shutter 151 to open or close, thereby exposing or isolating the porous plate 121. Further, a first heat insulation area A is formed between the heat insulation component 120 and the melting component 130, and a second heat insulation area is formed between the heat insulation component 120, the melting component 130 and the shutter 151 of the opening and closing mechanism 150. B, so that the heat conduction in the heat insulation areas A and B is reduced or the heat radiation is reflected, so that the heat J generated by each heater 112 is kept in the heat insulation areas A and B to maintain the crucible of the melting assembly 130 High temperature state of 132.

In short, the plurality of heaters 112 are used to heat the melting component. When the baffle 151 is closed, the melting component 130 limits the heat J from the heater 112 to the heat insulation component 120 and the opening and closing mechanism 150 and maintains it. The required operating temperature keeps the polycrystalline silicon S in a molten state. When the baffle plate 151 is opened to expose the perforated plate 121, the heat radiated from the bottom plate 135 of the carrier 131 is transferred by the heat exchanger 140 in a vertical direction V and radiates through the perforated plate 121 and reaches the cooling system 111, and is cooled by The system 111 continuously removes heat. In this way, the temperature of the carrier 131 gradually decreases and the temperature of the polycrystalline silicon S in the crucible 132 starts to decrease from the bottom, and the orientation growth process is performed along the vertical direction V.

In this embodiment, the cooling system 111 is disposed below the opening and closing mechanism 150 and includes an inflow line 1111, a first outlet line 1112, a heat dissipation area 1113, and a heat exchange member 1114. The heat exchange member 1114 can be selectively provided or Omit it. The heat dissipation area 1113 communicates with the inflow line 1111 and the outflow line 1112, respectively. The heat exchange member 1114 is disposed on the heat dissipation area 1113 and aligned with the perforated plate 121. In detail, a cooling water W enters the heat dissipation area 1113 through the inflow line 1111. When the baffle plate 151 exposes the perforated plate 121, part of the thermal energy contained in the carrier 131 and the second heat insulation area B self-heats as heat. The heat radiation of the exchanger 140 passes through the perforated plate 121 and reaches the heat exchange member 1114 in the vertical direction V. The heat conduction of the heat exchange member 1114 causes the cooling water W flowing in the heat dissipation zone 1113 to absorb part of the heat, among which the heat exchange member 1114 It is not a necessary element and can be selectively omitted. Since the external pumping motor draws the cooling water W from the outflow line 1112, the heat absorbed by the cooling water W is brought into the discrete heat zone 1113. At the same time, the low-temperature cooling water W is replenished into the heat radiation area 1113 from the inflow pipeline 1111. The aforementioned pumping and replenishing process is continued until the growing process of the polycrystalline silicon furnace apparatus 100 ends. The cooling system 111 further includes another inflow line 1115 and another outflow line 1116, which are arranged on one side of the furnace body 110 (or may be a circle around the furnace body 110) and located above the outflow line 1112. The cooling water W is used to absorb the heat transferred to the side of the furnace body 110 and the inflow line 1115 and the inflow line 1111 are not connected to each other. The heat dissipation process here is similar to the description of the inflow line 1111 and the outflow line 1112, which will not be described in detail below. .

In this embodiment, the heat insulation assembly 120 includes at least an upper heat insulation plate 122, a side heat insulation plate 123, and a lower heat insulation plate 124. For example, the sides of the heat insulation component 120 may be formed by combining four side heat insulation plates 123, and the bottom of the heat insulation component 120 is also formed by combining the corresponding four lower heat insulation plates 124. The upper heat shield 122 is located on the top of the fusion assembly 130. The side heat insulation plate 123, the upper heat insulation plate 122, and the lower heat insulation plate 124 surround the outer side of the fusion module 130. The lower heat insulation plate 124 is located below the heat exchanger 140. The perforated plate 121 is disposed between the lower heat insulation plate 124 and the heat exchanger 140, and the perforated plate 121 is in contact with or spaced apart from the heat exchanger 140, for example.

In addition, the heat insulation component 120 covers a part of the melting component 130 and forms a first heat insulation area A. The upper heat-shielding plate 122, the side heat-shielding plate 123, and the lower heat-shielding plate 124 are, for example, hermetically bonded or have only small pores. When the opening and closing mechanism 150 is opened, the heat radiated by the carrier 131 will be blocked by the heat insulation component 120 when it is transferred to the surroundings, so the heat can only be dissipated in the direction of the porous plate 121. In detail, a part of the heat radiated by the melting component 130 can pass through the perforated plate 121, and another part of the heat is blocked by the perforated plate 121, thereby slowing down the cooling rate of the polycrystalline silicon S and allowing the heat exchanger 140 and the lower heat insulation plate 124 The heat can be evenly dissipated, so that the solid-liquid interface F between the molten silicon M and the polycrystalline silicon S can be continuously maintained flat during the polycrystalline silicon S growing process.

In this embodiment, the porous plate 121 includes a plurality of first heat dissipation holes O1 and a plurality of second heat dissipation holes O2. A plurality of first heat dissipation holes O1 are provided through the central region of the porous plate 121. The plurality of second heat dissipation holes O2 are disposed at the periphery of the plurality of first heat dissipation holes O1, and a second aperture of each second heat dissipation hole O2 is larger than a first aperture of each first heat dissipation hole O1, so that heat insulation by The heat radiated from the area B is radiated more uniformly through the porous plate 121 to avoid that the heat dissipation rate in the central region of the porous plate 121 is excessively higher than the heat dissipation rate in the periphery of the porous plate 121. If the heat dissipation rate in the central region of the porous plate 121 is excessively higher than the heat dissipation rate in the periphery of the porous plate 121, the solid-liquid interface F between the molten silicon M and the solid polycrystalline silicon S during the growth of the polycrystalline silicon S cannot be maintained flat. In the design configuration, the distribution density of the first heat dissipation holes may be greater than the distribution density of the second heat dissipation holes, that is, the number of the first heat dissipation holes in a unit area may be greater than the number of the second heat dissipation holes in the same unit area. Can make the heat dissipation effect more uniform. In another embodiment (not shown), the size of the heat dissipation holes of the porous plate 121 may gradually decrease from the periphery of the porous plate 121 to the central region, and may have the same function and effect. In another embodiment (not shown), the heat dissipation hole may have any shape, for example, a slit design may be adopted as a form of the heat dissipation hole, and the slit in the central region is smaller than the slit in the periphery. The slits, for example, the size of the slits may gradually decrease from the periphery of the perforated plate 121 to the central region. In short, the cooling rate of the polycrystalline silicon S can be adjusted through the pore size of the porous plate 121 to meet the actual needs of the growing process. In other embodiments, the second aperture of each second heat dissipation hole may be equal to the first aperture of each first heat dissipation hole.

In this embodiment, please refer to FIGS. 2A to 2C. The opening and closing mechanism 150 includes a plurality of support members 153. The plurality of support members 153 are, for example, four and are fixed in the furnace body 110, and each support member 153 extends toward the heat insulation assembly 120 and abuts at four corners of the heat exchanger 140. The baffle 151 includes two first baffles 151a and two second baffles 151b, and is movably disposed between four support members 153, wherein the two first baffles 151a are located on the two second baffles 151b. And perforated plate 121. The two first baffles 151a are driven relatively by the driving member 152a and are relatively far away or relatively close along a first direction D1 synchronously, and the two second baffles 151b are driven by the driving member 152b and are perpendicular to each other. A second direction D2 of the first direction D1 is relatively far away or relatively close in synchronization. Both the first baffle 151a and the second baffle 151b are formed of a material having a heat insulation function.

In detail, the moving directions of the two first baffles 151a and the two second baffles 151b are perpendicular to each other. When the furnace body 110 performs the heating process, the two first baffles 151a and the two second baffles 151b are relatively close to each other, respectively. In order to shield the opening 126 and isolate the cooling system 111 of the perforated plate 121 and the furnace body 110, the heat radiated by the bottom 1301 (the bottom plate 135 of the carrier 131) of the melting assembly 130 is subjected to two firsts after passing through the perforated plate 121. The blocking of the baffle 151a and the two second baffles 151b prevents the heat in the heat exchanger 140 and the second heat insulation area B from being lost. When the furnace body 110 performs the cooling process, the two first baffles 151a and two second baffles 151b are relatively far away in the first direction D1 and the second direction D2 to expose the opening 126, and the perforated plate 121 corresponds to the cooling system 111. The heat J radiated from the bottom 1301 (the bottom plate 135 of the carrier 131) of the melting assembly 130 can reach the cooling system 111 through the perforated plate 121, and gradually remove the heat through the circulation of the cooling water W.

In this embodiment, the perforated plate 121 is disposed between the heat exchanger 140 and the baffles 151a and 151b, but not between the heat exchanger 140 and the bottom plate 135. The advantage of this is that the effect of uniform heat dissipation is compared. it is good. Moreover, if the perforated plate 121 is disposed between the heat exchanger 140 and the bottom plate 135, the crystal size or shape of the polycrystalline silicon S corresponding to the heat dissipation holes in the perforated plate 121 will be different from that without heat dissipation during the heat dissipation and cooling process. The crystal size or morphology of the polycrystalline silicon S to which the holes correspond. In addition, if the heat dissipation holes are directly provided on the heat exchanger 140 to omit the perforated plate 121, the above-mentioned problems also occur. Therefore, the installation position of the perforated plate 121 in this embodiment is the best implementation. That is, the heat radiated from the bottom plate 135 of the carrier 131 can be uniformly radiated by the heat exchanger 140 before passing through the porous plate 121. In this way, the polycrystalline silicon S in the crucible 132 can be more uniformly crystallized.

In addition, the baffles 151a and 151b may be selectively provided with a plurality of third heat dissipation holes O3 in a region near the opening 126. If this design is adopted, when the baffles 151a and 151b are opened, the third heat dissipation hole O3 on the baffles 151a and 151b overlaps with a part of the second heat dissipation hole around the perforated plate 121 (not shown) to prevent the baffle. The plates 151a and 151b block heat radiation to the periphery of the porous plate 121 and affect the heat radiation effect. When the baffles 151a and 151b are closed, the third heat dissipation hole on the baffle 151a and the third heat dissipation hole on the baffle 151b are misaligned and do not overlap with each other (not shown in the figure) to avoid the second heat insulation area The heat of B escapes from these heat dissipation holes.

FIG. 3A is a schematic diagram of heat dissipation of a polycrystalline furnace device in the prior art. FIG. 3B is a schematic diagram of heat dissipation of a polycrystalline silicon furnace device according to another embodiment of the present invention. FIG. 3C is a schematic diagram of heat dissipation of the polycrystalline furnace device of FIG. 1 according to the present invention. 3D to FIG. 3F are schematic diagrams of the crystal growth directions of FIGS. 3A to 3C, respectively.

Please refer to FIG. 2A, FIG. 3A and FIG. 3D, wherein the polycrystalline furnace device 100C of the prior art shown in FIG. 3A differs from the polycrystalline furnace device 100 of this embodiment in that the polycrystalline furnace device 100C does not have a porous plate and its opening The cymbal mechanism 150c and the heat insulation component 120c move up and down. When the heat insulation component 120c moves upward to expose the opening between the heat insulation component 120c and the opening and closing mechanism 150c, all the heat J enclosed around the melting component 130c passes through the heat insulation. The opening of the module 120c is transmitted outward. Because the heat transfer path of the polycrystalline silicon furnace device 100C is blocked by 150c instead of vertically downward, the crystal growth direction of the polycrystalline silicon S is shifted toward the left and right sides (see arrow in FIG. 3D), which results in the solid-liquid interface of the polycrystalline silicon S Uneven.

Please refer to FIG. 2A, FIG. 3B, and FIG. 3E. The difference between the polycrystalline furnace device 100B of another embodiment of FIG. 3B and the polycrystalline furnace device 100 of this embodiment is that the polycrystalline furnace device 100B does not have a perforated plate. When the opening and closing mechanism 150b is moved to the left and right to expose the opening of the heat exchanger 140b, a part of the heat radiated by the heat at the bottom 1301 of the melting component 130b is transmitted vertically outward through the opening of the heat exchanger 140b. However, the heat dissipation rate in the central region of the bottom part 1301 of the fused component 130b is excessively higher than the heat dissipation rate in the periphery of the fused component 130b, so that the growth rate of the polycrystalline silicon S central region is too fast, and a protrusion is generated (see the central region of FIG. 3E). Similarly, the solid-liquid interface of polycrystalline silicon S is uneven.

Please refer to FIG. 2A, FIG. 3C, and FIG. 3F. In the polycrystalline silicon furnace device 100 of this embodiment, a perforated plate 121 is arranged between the heat insulation component 120 and the melting component 130, so that the heat radiated from the bottom 1301 of the melting component 130 is J The heat can be evenly dissipated by the perforated plate 121 to prevent the heat dissipation rate of the central region of the fusion module 130 from being excessively higher than the heat dissipation rate of the periphery of the fusion module 130. This makes the solid-liquid interface polycrystalline silicon furnace device 100C and the polycrystalline silicon furnace device 100B of the polycrystalline silicon S more flat, and the crystal growth direction is more vertical.

In this embodiment, the lower heat shield 124 includes a plurality of first perforations T1 and a plurality of second perforations T2. The plurality of first perforations T1 are, for example, four, and the plurality of second perforations T2 are respectively arranged between any two adjacent first perforations T1 and are connected in a straight line, that is, the four first perforations T1 and the plurality of second perforations. T2 constitutes a rectangular appearance. The heat exchanger 140 is, for example, rectangular. The four support legs 141 are fixed at the four corners of the heat exchanger 140. The four support legs 141 abut against the top surface P1 of the lower heat insulation plate 124 and correspond to the four first through holes T1, respectively. Because each support leg 141 only touches the top surface P1 of the lower heat shield 124 in a small amount, and each of the first through holes T1 and the second through holes T2 can effectively prevent heat from being transferred from the heat exchanger 140 and concentrated on the lower heat shield 124.

In this embodiment, the heat insulation component 120 further includes a plurality of auxiliary heat insulation materials 125, for example, a flexible heat insulation material containing graphite material and which is flexible, is located near the opening 126 and is located on the lower heat insulation plate of the heat insulation component 120. 124 and the bottom 1301 of the fusion assembly 130. Since the soft auxiliary heat-insulating material can be flexed and bent, the gap between the lower heat-insulating plate 124 and the bottom 1301 of the fusion module 130 can be more fully filled, so that the heat-insulating effect is better. The plurality of auxiliary heat-insulating materials 125 are, for example, four, and are respectively abutted between the lower heat-insulating plate 124 and the bottom plate 135 of the bottom 1301 of the melting component 130, and may be attached to an outer wall surface P2 of the heat exchanger 140. In detail, the auxiliary heat insulating material 125 is used to isolate the heat of the periphery of the fusion assembly 130 from the space formed by the upper heat shield 122, the side heat shield 123, and the lower heat shield 124, so as to prevent heat from being transmitted to the heat. The gap between the exchanger 140 and the lower heat insulation plate 124 can further reduce heat loss.

The following is an experimental chart of the polycrystal furnace apparatus 100, 100B, and 100C shown in FIG. 3A to FIG. 3C during the growth process. FIG. 4A is a graph comparing the percentage of heat in the polycrystalline-crystal furnace apparatus of FIGS. 3A and 3C. FIG. 4B is a graph comparing the temperature difference of the water temperature of the polycrystalline-crystal furnace apparatus of FIGS. 3A and 3C. FIG. 4C is a graph comparing the power output percentages of the polycrystalline silicon furnace device of FIGS. 3A to 3C.

Please refer to FIGS. 3A, 3C, 4A and 4B. When the polycrystalline furnace device 100C shown in FIG. 3A is grown, all the heat J around the melting component 130c will be transmitted outward through the opening of the heat insulation component 120c, which greatly increases the amount of heat lost. According to FIG. 4A, Generally, the percentage of the amount of heat in the conventional fused component 130c during the growth process is about 60 to 90 (%). The following is the definition of the heat quantity H. The heat quantity H is the heat absorbed by the cooling water. The calculation formula is H = c * m * (T end-T beginning) * 100%, where H is the amount of heat (cal / min), c is the specific heat of water (cal / g ° C), m is the water flow rate (g / min), (end of T-beginning of T) is the outlet temperature (° C) of the temperature in the absorption furnace minus the initial inlet temperature ( ° C). The percentage of heat quantity (%) is defined as H / H _max * 100%, where H _max is the maximum allowable heat quantity of the polycrystalline silicon furnace device, and the calculation formula is H _max = c * m * (T _max- T initial) * 100% , T _max is the maximum allowable effluent temperature of the polycrystalline silicon furnace device.

For example, (T-T-T) is the temperature of the outlet water after the cooling water absorbs the heat generated by the polycrystalline furnace device minus the initial temperature of the inlet water before the cooling water enters the polycrystalline furnace device. The temperature difference between the front and back of the cooling water is related to the amount of heat it brings. When the temperature difference between the front and back of the cooling water is small, it means that the heat of the cooling water is low and its temperature rise is small, that is, the polycrystalline silicon furnace device loses less heat. When the temperature difference between the front and back of the cooling water is large, it means that the heating energy of the cooling water is high and the temperature rising range is large, that is, the polycrystalline silicon furnace device loses more heat.

The heat exchanger 140 of the polycrystalline furnace device 100 shown in FIGS. 2A and 3C is fixed to the lower heat insulation plate 124 through a plurality of support legs 141, and a plurality of auxiliary heat insulation materials 125 are installed around the heat exchanger 140. In order to save the heat located around the melting assembly 130c. As shown in FIG. 4A, the percentage of heat generation during the growing process of the melting component 130 of the polycrystalline silicon furnace device 100 of the present invention can be reduced to about 30-40 (%), and it can be seen that, compared with the conventional The heat-insulating component 120c, the heat-insulating component 120 of the polycrystalline silicon furnace device 100 of the present invention exerts a better heat-insulating effect, and further reduces the amount of heat lost. Referring to FIG. 2A, FIG. 3A, FIG. 3B, and FIG. 4B, since the heat loss of the polycrystalline furnace device 100C (conventional DS process) in the crystal growth is greater than the heat loss of the polycrystalline furnace device 100 (case B) in the crystal growth, so The temperature rise of the cooling water W after absorbing the heat of the polycrystalline furnace device 100 is lower than the temperature rise of the cooling water after absorbing the heat of the polycrystalline furnace device 100C.

In detail, the polycrystalline furnace device 100C and the polycrystalline furnace device 100 (case B) of the present invention are both provided with the same cooling system 111. When the cooling water W is respectively provided by the polycrystalline furnace device 100 (case B) (or multiple When the inflow line 1111 at the bottom of the crystal furnace device and another inflow line 1115 at the side enter the furnace body 110, the cooling water W absorbs the heat transferred to the bottom and the sides of the furnace body 110 during the flow, and finally the cooling water W is discharged from the outflow line 1112 and the other outflow line 1116 to take away the heat. Referring to FIG. 4B, the temperature difference between the final temperature of the cooling water W discharged from the outflow line 1112 at the bottom of the polycrystalline silicon furnace device 100 (case B) and the initial temperature of the cooling water W entered from the inflow line 1111 is less than 2 degrees in the growth phase (Growth) The temperature difference between the final temperature of the cooling water W discharged from the other outflow line 1116 on the side of the polycrystalline furnace device 100 (case B) and the initial temperature of the cooling water W entered from the other inflow line 1115 is about the same in the growth phase (Growth). Between 5 and 6 degrees. Similarly, the temperature difference between the final temperature of the cooling water W discharged from the outflow line 1112 at the bottom of the polycrystalline silicon furnace device 100C (conventional DS process) and the initial temperature of the cooling water W entered from the inflow line 1111 is 2 to 3 degrees in the growth phase. The temperature difference between the final temperature of the cooling water W discharged from the other outflow line 1116 on the side and the initial temperature of the cooling water W entered from the other inflow line 1115 is between 7 and 10 degrees in the growth phase. Therefore, the temperature difference of the water temperature measured at the water outlet 1112 of the polycrystalline furnace device 100 (case B) can be reduced by about 2 degrees compared with the temperature difference of the water temperature measured at the water outlet 1112 of the polycrystalline furnace device 100C. . Similarly, the temperature difference of the water temperature measured at the water outlet 1116 of the polycrystalline furnace device 100 (case B) can be reduced by about 1 compared with the temperature difference of the water temperature measured at the water outlet 1116 of the polycrystalline furnace device 100C. ~ 5 degrees. This indicates that the heat quantity of the cooling water W passing through the polycrystalline silicon furnace device 100 is lower, that is, the temperature rise of the cooling water W is lower, and the electricity for heat dissipation of the cooling water W after the temperature increase can be saved.

Please refer to FIG. 2A, FIG. 3A, and FIG. 4C. The polycrystalline silicon furnace device 100 of this embodiment can greatly reduce the heat during the growth process by using the lower heat insulation plate 124, the perforated plate 121, and the auxiliary heat insulation material 125. Loss, thereby reducing the heating output of the heater and achieving the effect of reducing power consumption. Among them, conventional DS process is a polycrystalline silicon furnace device 100C, which is an existing technology; Case A is a polycrystalline silicon furnace device 100B, which has an auxiliary heat insulating material 125 but does not have a perforated plate 121; Case B is the polycrystalline silicon furnace device 100 of this embodiment. It also has an auxiliary heat insulating material 125 and a perforated plate 121.

As shown in FIG. 4C, the heating power output percentage of the polycrystalline furnace device 100 (Case B) during the growth phase is about 16 to 18.5 (%), where the power output percentage = the actual output power of the heater / Heater maximum output power. The polycrystalline furnace device 100B (Case A) of FIG. 3B is not equipped with a perforated plate 121, so the heat loss during the growth phase is larger than that of the polycrystalline furnace 100, and the heating power output percentage is about 21 ~ 27 (%). between. In the polycrystalline furnace device 100C (conventional DS process) of FIG. 3A, the opening and closing mechanism 150c needs to be relatively far away from the heat insulation component 120c, so that the inside of the heat insulation component 120c is completely communicated with the outside world, and has more heat. Lost, so its thermal insulation is poor. Therefore, the polycrystalline furnace device 100C must increase the heating power output percentage of its heater to maintain the high temperature of the molten component 130c of the polycrystalline furnace device 100C during the growth process. As shown in FIG. 4C, the heating power output percentage of the polycrystalline furnace device 100C during the growth phase is maintained between about 34 and 40 (%). By comparison, the amount of electricity used for the growth of the crystal in the polycrystalline furnace device 100 (Case B) of this embodiment is only half of the amount of electricity used for the growth of the crystal in the polycrystalline furnace device 100C of FIG. 3A.

In summary, the polycrystalline silicon furnace device of the present invention is used for the manufacture of crystal cymbals. Multiple driving members are used to respectively drive multiple insulating plates to be synchronized relatively far away or relatively close to expose or isolate the porous plate. When multiple insulating plates are exposed to the porous plate, the heat of the molten component is transferred from the heat exchanger through the porous plate to the cooling system to start cooling and cooling and to grow. By restricting the direction of the heat radiation transmission of the porous plate to improve the phenomenon of uneven heat dissipation of the molten component, the solid-liquid interface can be kept level during the growth process, thereby improving the quality of the crystallite.

In addition, the polycrystalline silicon furnace device of the present invention only transmits heat at the bottom of the fused component through the perforated plate, so the remaining heat of the fused component can still be kept in the heat insulation component, so that the heating power of the heater does not need to be greatly increased to maintain the fused component The temperature can also effectively reduce the energy loss of the cooling system during heat dissipation.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100, 100B, 100C‧‧‧ polycrystalline furnace device

110‧‧‧furnace

111‧‧‧cooling system

1111, 1115‧‧‧ Inflow pipeline

1112, 1116‧‧‧ Outflow pipeline

1113‧‧‧Cooling area

1114‧‧‧ Heat Exchanger

112‧‧‧heater

120, 120b, 120c‧‧‧ Insulation components

121‧‧‧ multi-well plate

122‧‧‧ Upper heat shield

123‧‧‧ side insulation board

124‧‧‧Lower insulation board

125‧‧‧ auxiliary insulation material

126‧‧‧ opening

130, 130b, 130c ‧‧‧ Fused components

131‧‧‧carrying parts

1301‧‧‧ bottom

132‧‧‧Crucible

133‧‧‧Air intake pipe

134‧‧‧Side

135‧‧‧ floor

136‧‧‧Top cover

140, 140b‧‧‧ heat exchanger

141‧‧‧ support feet

150, 150b, 150c

151‧‧‧ bezel

151a‧‧‧First Bezel

151b‧‧‧Second bezel

152a, 152b‧‧‧Driver

153‧‧‧Support

A‧‧‧The first insulation area

B‧‧‧Second insulation area

D1‧‧‧ first direction

D2‧‧‧ Second direction

F‧‧‧Solid-liquid interface

J‧‧‧ heat

O1‧‧‧The first cooling hole

O2‧‧‧Second heat dissipation hole

O3‧‧‧third vent

T1‧‧‧first perforation

T2‧‧‧second perforation

V‧‧‧ vertical

W‧‧‧ cooling water

S‧‧‧polycrystalline silicon

M‧‧‧ Fused Silicon

FIG. 1 is a schematic view of a baking state of a polycrystalline silicon furnace device according to an embodiment of the present invention. FIG. 2A is a schematic view of a crystal growth state of the polycrystalline-crystal furnace apparatus of FIG. 1. FIG. FIG. 2B is a schematic diagram illustrating a connection between a perforated plate and a splitting assembly of the polycrystalline silicon furnace device of FIG. 2A. FIG. 2C is a schematic view showing an opened state of the opening and closing assembly of the polycrystalline silicon furnace device of FIG. 2A. FIG. 3A is a schematic diagram of heat dissipation of a polycrystalline furnace device in the prior art. FIG. 3B is a schematic diagram of heat dissipation of a polycrystalline silicon furnace device according to another embodiment of the present invention. FIG. 3C is a schematic diagram of heat dissipation of the polycrystalline furnace device of FIG. 1 according to the present invention. 3D to FIG. 3F are schematic diagrams of the crystal growth directions of FIGS. 3A to 3C, respectively. FIG. 4A is a graph comparing the percentage of heat in the polycrystalline-crystal furnace apparatus of FIGS. 3A and 3C. FIG. 4B is a graph comparing the temperature difference of the water temperature of the polycrystal furnace apparatus of FIGS. 3A and 3C. FIG. 4C is a graph comparing the power output percentages of the polycrystalline silicon furnace device of FIGS. 3A to 3C.

Claims (18)

A polycrystalline furnace device includes: a furnace body having a cooling system and a plurality of heaters; a heat insulation component disposed in the furnace body and the heat insulation component has an opening; a melting component disposed in the heat insulation In the module, a bottom of the melting module corresponds to an opening; a heat exchanger is arranged at the bottom of the melting module; an opening mechanism is arranged outside the heat insulation module and includes at least one baffle, the at least one stop The plate is adapted to be opened or closed to expose or isolate the opening; and a perforated plate is disposed between the heat exchanger and the opening and closing mechanism, wherein when the baffle opens and exposes the opening of the heat insulation assembly The heat radiated by the melting component is transferred from the heat exchanger through the perforated plate and reaches the cooling system. The polycrystalline silicon furnace device according to item 1 of the patent application scope, wherein the heat insulation component includes at least an upper heat insulation plate, a side heat insulation plate and a lower heat insulation plate, and the upper heat insulation plate is located on the top of the fusion component. And the side heat insulation plate, the upper heat insulation plate and the lower heat insulation plate surround the outside of the fusion assembly, the lower heat insulation plate is located below the heat exchanger, and the perforated plate is disposed between the lower heat insulation plate and The heat exchanger. The polycrystalline furnace device according to item 2 of the scope of patent application, wherein the lower heat insulation plate includes a plurality of first perforations and a plurality of second perforations, the heat exchanger includes a plurality of support feet, and the support feet abut The first heat-shielding plates are respectively corresponding to the first perforations, and the second perforations are respectively disposed between the first perforations. The polycrystalline furnace device according to item 2 of the patent application scope, wherein the heat insulation component includes a plurality of auxiliary heat insulation materials, and the auxiliary heat insulation materials abut against the bottom heat insulation plate and the bottom of the fusion component. between. The polycrystalline silicon furnace device according to item 1 of the scope of patent application, wherein the at least one baffle includes two first baffles and two second baffles, and the second baffles are located between the first baffles and the porous structure. Between the boards, the two first baffles are synchronously relatively distant or relatively close along a first direction, and the two second baffles are synchronously relatively distant or relatively close along a second direction perpendicular to the first direction. . The polycrystalline furnace device according to item 1 of the scope of patent application, wherein the porous plate includes a plurality of first heat dissipation holes and a plurality of second heat dissipation holes, and the first heat dissipation holes are disposed in a central region of the porous plate. The second heat dissipation holes are disposed on the periphery of the first heat dissipation holes, and a second aperture of each of the second heat dissipation holes is larger than a first aperture of each of the first heat dissipation holes. The polycrystalline silicon furnace device according to item 1 of the scope of patent application, wherein the cooling system includes an inflow pipeline, a first-stage outlet pipeline, and a heat dissipation area, and the heat dissipation area communicates with the inflow pipeline and the outflow pipeline, respectively, and the heat dissipation area is located in the Below the opening and closing mechanism, a cooling water enters the heat dissipation area through the inflow pipeline to absorb heat, and then leaves the heat dissipation area through the outflow pipeline. The polycrystalline silicon furnace device according to item 8 of the scope of patent application, wherein the cooling system includes a heat exchange member, the heat exchange member is disposed on the heat dissipation area and aligned with the perforated plate. The polycrystalline silicon furnace device according to item 1 of the scope of patent application, wherein the melting component includes: a carrier including at least one side plate, a bottom plate and an upper cover plate; a crucible located in the carrier; and An air inlet pipe communicates with the upper cover plate, wherein the heat exchanger is disposed between the bottom plate and the perforated plate of the carrier. A polycrystalline furnace device includes: a furnace body having a cooling system and a plurality of heaters; a heat insulation component disposed in the furnace body and the heat insulation component has an opening; a melting component disposed in the heat insulation In the module, a bottom of the melting module corresponds to an opening; a heat exchanger is arranged at the bottom of the melting module; an opening mechanism is arranged outside the heat insulation module and includes at least one baffle, the at least one stop The plate is adapted to be opened or closed to expose or isolate the opening; and an auxiliary thermal insulation material adjacent to the opening and located between the thermal insulation component and the fused component, wherein when the baffle is opened and the thermal insulation component is exposed When the opening is opened, the heat radiated by the melting component is transferred from the heat exchanger to the cooling system. The polycrystalline silicon furnace device according to item 10 of the patent application scope, wherein the auxiliary heat insulating material is a soft heat insulating material. The polycrystalline silicon furnace device according to item 10 of the patent application scope includes: a perforated plate arranged between the heat exchanger and the opening and closing mechanism. The polycrystalline silicon furnace device according to item 12 of the scope of patent application, wherein the porous plate includes a plurality of first heat dissipation holes and a plurality of second heat dissipation holes, and the first heat dissipation holes are disposed in a central region of the porous plate. The second heat dissipation holes are disposed on the periphery of the first heat dissipation holes, and a second aperture of each of the second heat dissipation holes is larger than a first aperture of each of the first heat dissipation holes. As described in item 13 of the scope of the patent application, the distribution density of the first heat dissipation holes is greater than the distribution density of the second heat dissipation holes. The polycrystalline silicon furnace device according to item 12 of the scope of patent application, wherein the porous plate includes a plurality of heat dissipation holes, and the size of the heat dissipation holes gradually decreases from the periphery of the porous plate to the central region. The polycrystalline furnace device according to item 10 of the patent application scope, wherein the heat insulation component comprises: an upper heat insulation plate located above the melting component; a lower heat insulation plate located below the heat exchanger; and one side A heat insulation plate is located between the upper heat insulation plate and the lower heat insulation plate, wherein the upper heat insulation plate, the side heat insulation plate, and the lower heat insulation plate surround the outside of the fused component, and the auxiliary insulation A hot material is located between the lower heat shield and the bottom of the fusion assembly. According to the polycrystalline furnace device of claim 10, wherein the at least one baffle includes two first baffles and two second baffles, the second baffles are located between the first baffles and the heat. Between the exchangers, the two first baffles are relatively far away or relatively close along a first direction, and the two second baffles are relatively far away or relatively close along a second direction perpendicular to the first direction. The polycrystalline furnace device according to item 17 of the scope of patent application, comprising: a perforated plate arranged between the heat exchanger and the opening and closing mechanism, the perforated plate having a plurality of first heat dissipation holes and a plurality of second Heat dissipation holes, and a second aperture of each of the second heat dissipation holes is larger than a first aperture of each of the first heat dissipation holes; and a plurality of third heat dissipation holes are disposed on the first baffles and the second baffles An area on the plate and close to the opening, wherein when the first baffle and the second baffle are far from each other to expose the opening, the first baffle and the second baffle on the second baffle are exposed The third heat dissipation holes overlap with a portion of the porous plate and the second heat dissipation holes. When the first baffles and the second baffles are close to each other to close the opening, the third heat dissipation holes There is no overlap between each other.