TW201946778A - Transparent conductive glass capable of exhibiting excellent conductivity and good scratch resistance - Google Patents

Transparent conductive glass capable of exhibiting excellent conductivity and good scratch resistance Download PDF

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Publication number
TW201946778A
TW201946778A TW108115687A TW108115687A TW201946778A TW 201946778 A TW201946778 A TW 201946778A TW 108115687 A TW108115687 A TW 108115687A TW 108115687 A TW108115687 A TW 108115687A TW 201946778 A TW201946778 A TW 201946778A
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transparent conductive
conductive layer
glass
glass substrate
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TW108115687A
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Chinese (zh)
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西森才将
梨木智剛
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日商日東電工股份有限公司
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Publication of TW201946778A publication Critical patent/TW201946778A/en

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00Re-forming shaped glass
    • C03B23/02Re-forming glass sheets
    • C03B23/023Re-forming glass sheets by bending
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor
    • C03C17/002General methods for coating; Devices therefor for flat glass, e.g. float glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/23Mixtures
    • C03C2217/231In2O3/SnO2

Abstract

The present invention provides transparent conductive glass which includes: a glass substrate having a thickness of 150 [mu]m or less and having flexibility; and a transparent conductive layer which is disposed on one side of the glass substrate in a thickness direction. The surface roughness Ra of one surface of the transparent conductive layer in the thickness direction is 10 nm or less. According to the aforementioned arrangement, the transparent conductive glass can be subjected to high-temperature processing and can exhibit excellent conductivity. Since the surface roughness Ra of the one surface of the transparent conductive layer in the thickness direction is 10 nm or less, it has excellent scratch resistance.

Description

透明導電性玻璃Transparent conductive glass

本發明係關於一種透明導電性玻璃,詳細而言係關於一種較佳地用於光學用途之透明導電性玻璃。The present invention relates to a transparent conductive glass, and in particular to a transparent conductive glass preferably used for optical applications.

先前,將包含銦錫複合氧化物(ITO)之透明導電層形成於可撓性之樹脂基材而成之透明導電性膜用於觸控面板等光學用途。Previously, a transparent conductive film formed by forming a transparent conductive layer containing indium tin composite oxide (ITO) on a flexible resin substrate was used for optical applications such as touch panels.

例如,於日本專利特開2017-62609號公報中揭示有一種具備樹脂膜基材、硬塗層及透明導電層之透明導電性膜。於日本專利特開2017-62609號公報中,硬塗層作為用以抑制透明導電層之耐擦傷性之層,設置於透明導電性膜。For example, Japanese Patent Laid-Open No. 2017-62609 discloses a transparent conductive film including a resin film substrate, a hard coat layer, and a transparent conductive layer. In Japanese Patent Laid-Open No. 2017-62609, a hard coat layer is provided on a transparent conductive film as a layer for suppressing the scratch resistance of the transparent conductive layer.

就生產性之觀點而言,此種透明導電性膜係藉由卷對卷方式製造,具體而言,藉由在樹脂膜基材之上依序積層硬塗層及透明導電層而製造。From the viewpoint of productivity, such a transparent conductive film is manufactured by a roll-to-roll method, specifically, by sequentially stacking a hard coat layer and a transparent conductive layer on a resin film substrate.

然,ITO藉由加熱而結晶化,從而表現出優異之導電性(低電阻)。而且,加熱溫度(例如200℃以上)越高,則越表現更加優異之導電性。However, ITO is crystallized by heating, thereby exhibiting excellent electrical conductivity (low resistance). In addition, the higher the heating temperature (for example, 200 ° C. or higher), the more excellent the conductivity is.

然而,用作樹脂膜基材之聚對苯二甲酸乙二酯膜一般而言會因200℃以上之高溫而產生發生變形或破損之異常。However, a polyethylene terephthalate film used as a resin film substrate is generally deformed or damaged due to a high temperature of 200 ° C or higher.

因此,為了能進行高溫處理,而研究使用耐熱性優異之玻璃基材來代替透明樹脂膜。即,研究使用較薄且能夠捲繞成輥狀之玻璃基材(玻璃膜),藉由卷對卷方式製造透明導電性玻璃膜。Therefore, in order to perform high-temperature processing, it has been studied to use a glass substrate having excellent heat resistance instead of the transparent resin film. That is, it has been studied to produce a transparent conductive glass film by a roll-to-roll method using a thin glass substrate (glass film) that can be wound into a roll shape.

此外,硬塗層亦由樹脂形成,與樹脂膜基材同樣地會因高溫而發生變形等,故而於實施高溫處理之情形時,無法將硬塗層設置於玻璃基材與透明導電層之間。即,成為於玻璃基材直接積層ITO等透明導電層,從而產生耐擦傷性較差之異常。In addition, the hard coat layer is also formed of resin, and it will be deformed due to high temperature like the resin film base material. Therefore, in the case of high temperature treatment, the hard coat layer cannot be placed between the glass base material and the transparent conductive layer . That is, a transparent conductive layer such as ITO is directly laminated on a glass substrate, which causes an abnormality in that the scratch resistance is poor.

本發明提供一種可表現優異之導電性且耐擦傷性良好之透明導電性玻璃。The present invention provides a transparent conductive glass that can exhibit excellent conductivity and good scratch resistance.

本發明[1]包含一種透明導電性玻璃,其具備:玻璃基材,其厚度為150 μm以下且具有可撓性;及透明導電層,其配置於上述玻璃基材之厚度方向一側;且上述透明導電層之厚度方向其中一面之表面粗糙度Ra為10 nm以下。The present invention [1] includes a transparent conductive glass including: a glass substrate having a thickness of 150 μm or less and having flexibility; and a transparent conductive layer disposed on one side in the thickness direction of the glass substrate; and The surface roughness Ra of one surface of the transparent conductive layer in the thickness direction is 10 nm or less.

本發明[2]包含如技術方案1之透明導電性玻璃,其中上述透明導電層之比電阻為2.5×10-4 Ω/cm以下。The present invention [2] a conductive glass as the transparent aspect 1, wherein the specific resistance of the transparent conductive layer is 2.5 × 10 -4 Ω / cm or less.

本發明[3]包含如[1]或[2]之透明導電性玻璃,其被捲繞成輥狀。The present invention [3] includes a transparent conductive glass such as [1] or [2], which is wound into a roll shape.

本發明之透明導電性玻璃具備:玻璃基材,其厚度為150 μm以下且具有可撓性;及透明導電層,其配置於玻璃基材之厚度方向一側。因此,透明導電性玻璃能夠進行高溫處理,且可表現優異之導電性。又,透明導電層之厚度方向其中一面之表面粗糙度Ra為10 nm以下。因此,耐擦傷性優異。The transparent conductive glass of the present invention includes: a glass substrate having a thickness of 150 μm or less and having flexibility; and a transparent conductive layer disposed on one side in the thickness direction of the glass substrate. Therefore, the transparent conductive glass can be subjected to high-temperature processing, and can exhibit excellent conductivity. The surface roughness Ra of one surface in the thickness direction of the transparent conductive layer is 10 nm or less. Therefore, it is excellent in abrasion resistance.

1.透明導電性玻璃
參照圖1~圖3,說明作為本發明之透明導電性玻璃之一實施形態之透明導電性玻璃1。
1. Transparent conductive glass The transparent conductive glass 1 which is one embodiment of the transparent conductive glass of this invention is demonstrated with reference to FIG. 1-3.

於圖1中,紙面上下方向為上下方向(厚度方向、第1方向),紙面上側為上側(厚度方向一側、第1方向一側),紙面下側為下側(厚度方向另一側、第1方向另一側)。又,紙面左右方向及深度方向係與上下方向正交之面方向。具體而言,依據各圖之方向箭頭。In FIG. 1, the upper and lower directions on the paper surface are the up and down directions (thickness direction, first direction), the upper side of the paper surface is the upper side (thickness side, first direction side), and the lower side of the paper surface is the lower side (the other side in the thickness direction, 1st direction on the other side). The left-right direction and the depth direction of the paper surface are plane directions orthogonal to the up-down direction. Specifically, according to the direction arrow of each figure.

如圖1所示,透明導電性玻璃1具有具備特定厚度之膜形狀(包含薄片形狀),沿與厚度方向正交之特定方向(面方向)延伸,具有平坦之上表面及平坦之下表面。As shown in FIG. 1, the transparent conductive glass 1 has a film shape (including a sheet shape) having a specific thickness, extends in a specific direction (plane direction) orthogonal to the thickness direction, and has a flat upper surface and a flat lower surface.

具體而言,透明導電性玻璃1具備玻璃基材2、及配置於玻璃基材2之上側(厚度方向一側)之透明導電層3,較佳為由玻璃基材2及透明導電層3構成。Specifically, the transparent conductive glass 1 includes a glass substrate 2 and a transparent conductive layer 3 arranged on the glass substrate 2 (on the thickness direction side), and is preferably composed of the glass substrate 2 and the transparent conductive layer 3. .

(玻璃基材)
玻璃基材2係透明導電性玻璃1之最下層,且係確保透明導電性玻璃1之機械強度、支持透明導電層3之支持材。
(Glass substrate)
The glass substrate 2 is the lowermost layer of the transparent conductive glass 1, and is a supporting material that ensures the mechanical strength of the transparent conductive glass 1 and supports the transparent conductive layer 3.

玻璃基材2具有膜形狀(包含薄片形狀),由透明之玻璃形成。The glass substrate 2 has a film shape (including a sheet shape) and is formed of transparent glass.

作為玻璃,例如可列舉:無鹼玻璃、鈉玻璃、硼矽酸玻璃、鋁矽玻璃等。Examples of the glass include alkali-free glass, soda glass, borosilicate glass, and aluminosilicate glass.

玻璃基材具有可撓性。具體而言,玻璃基材2之極限彎曲應力例如為100 MPa以上,較佳為150 MPa以上。若玻璃基材2之極限彎曲應力為上述下限以上,則可撓性優異,即便捲繞成輥狀,亦能夠抑制玻璃基材2之破損。The glass substrate is flexible. Specifically, the ultimate bending stress of the glass substrate 2 is, for example, 100 MPa or more, and preferably 150 MPa or more. When the ultimate bending stress of the glass substrate 2 is equal to or more than the above-mentioned lower limit, the flexibility is excellent, and even if the glass substrate 2 is wound into a roll shape, the glass substrate 2 can be prevented from being damaged.

極限彎曲強度係以下述順序進行測定。
(1)將厚度T(mm)之玻璃基材切斷成寬度50 mm×長度120 mm,從而獲得樣品。
(2)以將樣品之長度方向兩端部相互靠近之方式彎折樣品。
(3)測定樣品斷裂時之樣品之長度方向兩端部之距離D(mm)。
(4)藉由下述式,算出極限彎曲應力σM (Pa)。
σM =(E×T)/D
E表示玻璃基材之楊氏模數(Pa)。
The ultimate bending strength is measured in the following procedure.
(1) A glass substrate having a thickness T (mm) was cut into a width of 50 mm × a length of 120 mm to obtain a sample.
(2) Bend the sample so that both ends in the longitudinal direction of the sample are close to each other.
(3) Measure the distance D (mm) at both ends of the sample in the longitudinal direction when the sample breaks.
(4) The ultimate bending stress σ M (Pa) is calculated by the following formula.
σ M = (E × T) / D
E represents the Young's modulus (Pa) of the glass substrate.

玻璃基材2具有透明性。具體而言,玻璃基材2之全光線透過率(JIS K 7375-2008)例如為80%以上,較佳為85%以上。The glass substrate 2 has transparency. Specifically, the total light transmittance (JIS K 7375-2008) of the glass substrate 2 is, for example, 80% or more, and preferably 85% or more.

亦可對玻璃基材2之上表面進行公知之基底處理(底塗處理)。即,玻璃基材2亦可於其上表面具備底塗層。The upper surface of the glass substrate 2 may be subjected to a known base treatment (priming treatment). That is, the glass substrate 2 may be provided with an undercoat layer on the upper surface.

玻璃基材2之厚度為150 μm以下,較佳為120 μm以下,更佳為100 μm以下。又,玻璃基材2之厚度例如為10 μm以上,較佳為30 μm以上。若玻璃基材2之厚度為上述上限以下,則可撓性優異,能夠捲繞成輥狀。又,若玻璃基材2之厚度為上述下限以上,則機械強度優異,可抑制卷對卷搬送時之破損。The thickness of the glass substrate 2 is 150 μm or less, preferably 120 μm or less, and more preferably 100 μm or less. The thickness of the glass substrate 2 is, for example, 10 μm or more, and preferably 30 μm or more. When the thickness of the glass substrate 2 is equal to or less than the above-mentioned upper limit, it is excellent in flexibility and can be wound into a roll shape. Moreover, when the thickness of the glass base material 2 is more than the said lower limit, it is excellent in mechanical strength, and can suppress the damage at the time of roll-to-roll conveyance.

玻璃基材2之厚度例如可使用針盤量規(PEACOCK公司製造,「DG-205」)進行測定。The thickness of the glass substrate 2 can be measured, for example, using a dial gauge (manufactured by PEACOCK, "DG-205").

(透明導電層)
透明導電層3係視需要結晶化、用以於後續步驟中形成為所需之圖案而形成透明之圖案的導電層。
(Transparent conductive layer)
The transparent conductive layer 3 is a conductive layer that is crystallized as necessary to form a transparent pattern in a subsequent step to form a desired pattern.

透明導電層3係透明導電性玻璃1之最上層,且具有膜形狀(包含薄片形狀)。透明導電層3以透明導電層3之下表面與玻璃基材2之上表面接觸之方式配置於玻璃基材2之上表面。The transparent conductive layer 3 is the uppermost layer of the transparent conductive glass 1 and has a film shape (including a sheet shape). The transparent conductive layer 3 is disposed on the upper surface of the glass substrate 2 such that the lower surface of the transparent conductive layer 3 is in contact with the upper surface of the glass substrate 2.

作為透明導電層3之材料,例如可列舉含有選自由In、Sn、Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W所組成之群中之至少一種金屬之金屬氧化物。亦可於金屬氧化物中視需要進而摻雜上述群所示之金屬原子。Examples of the material of the transparent conductive layer 3 include at least one selected from the group consisting of In, Sn, Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W. A metal oxide of a metal. The metal oxide may further be doped with a metal atom represented by the above group, if necessary.

作為透明導電層3,具體而言可列舉:例如銦錫複合氧化物(ITO)等含銦之氧化物、例如銻錫複合氧化物(ATO)等含銻之氧化物等,較佳地可列舉含銦之氧化物,更佳地可列舉ITO。Specific examples of the transparent conductive layer 3 include indium-containing oxides such as indium tin composite oxide (ITO), antimony-containing oxides such as antimony tin composite oxide (ATO), and the like. An indium-containing oxide is more preferably ITO.

於透明導電層3包含ITO之情形時,氧化錫(SnO2 )含量相對於氧化錫及氧化銦(In2 O3 )之合計量,例如為0.5質量%以上,較佳為3質量%以上,又,例如為15質量%以下,較佳為13質量%以下。若氧化錫之含量為上述下限以上,則可使透明導電層3之耐久性更加良好。又,若氧化錫之含量為上述上限以下,則可使透明導電層3之結晶轉化較為容易,且提高透明性或比電阻之穩定性。When the transparent conductive layer 3 includes ITO, the content of tin oxide (SnO 2 ) is 0.5 mass% or more, and preferably 3 mass% or more, relative to the total amount of tin oxide and indium oxide (In 2 O 3 ). It is, for example, 15% by mass or less, and preferably 13% by mass or less. When the content of tin oxide is at least the above lower limit, the durability of the transparent conductive layer 3 can be made better. In addition, if the content of tin oxide is equal to or less than the above-mentioned upper limit, the crystal conversion of the transparent conductive layer 3 can be made easier, and the transparency or the specific resistance can be improved.

本說明書中之「ITO」只要為至少包含銦(In)及錫(Sn)之複合氧化物即可,亦可包含除其等以外之追加成分。作為追加成分,例如可列舉除In、Sn以外之金屬元素,具體而言可列舉:Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W、Fe、Pb、Ni、Nb、Cr、Ga等。The "ITO" in this specification may be a composite oxide containing at least indium (In) and tin (Sn), and may include additional components other than these. Examples of the additional component include metal elements other than In and Sn. Specific examples include Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, W, Fe, Pb, Ni, Nb, Cr, Ga, etc.

透明導電層3之上表面(厚度方向其中一面)之表面粗糙度Ra為10 nm以下,較佳為5.0 nm以下,更佳為3.0 nm以下,進而較佳為1.0 nm以下,又,例如為0.001 nm以上。若透明導電層3之表面粗糙度Ra為上述上限以下,則於透明導電性玻璃1中,對於刮痕,可抑制透明導電層3產生傷,耐擦傷性優異。表面粗糙度Ra可使用原子力顯微鏡(Veeco公司製造,「Nanoscope4」)進行測定。The surface roughness Ra of the upper surface (one surface in the thickness direction) of the transparent conductive layer 3 is 10 nm or less, preferably 5.0 nm or less, more preferably 3.0 nm or less, further preferably 1.0 nm or less, and, for example, 0.001 nm or more. When the surface roughness Ra of the transparent conductive layer 3 is equal to or less than the above-mentioned upper limit, the transparent conductive glass 1 can prevent scratches on the transparent conductive layer 3 from being generated, and has excellent scratch resistance. The surface roughness Ra can be measured using an atomic force microscope (manufactured by Veeco, "Nanoscope 4").

透明導電層3之薄片電阻例如為300 Ω/□以下,較佳為100 Ω/□以下,更佳為50 Ω/□以下,進而較佳為15 Ω/□以下,又,例如為1 Ω/□以上。薄片電阻可利用四端子法進行測定。The sheet resistance of the transparent conductive layer 3 is, for example, 300 Ω / □ or less, preferably 100 Ω / □ or less, more preferably 50 Ω / □ or less, further preferably 15 Ω / □ or less, and, for example, 1 Ω / □ □ Above. The sheet resistance can be measured by a four-terminal method.

透明導電層3之比電阻例如為5.0×10-4 Ω・cm以下,較佳為2.5×10-4 Ω・cm以下,更佳為2.0×10-4 Ω・cm以下,進而較佳為1.5×10-4 Ω・cm以下。比電阻可利用四端子法進行測定。Specific resistance of the transparent conductive layer 3 of, for example, 5.0 × 10 -4 Ω · cm or less, preferably 2.5 × 10 -4 Ω · cm or less, more preferably 2.0 × 10 -4 Ω · cm or less, further preferably 1.5 × 10 -4 Ω · cm or less. Specific resistance can be measured by a four-terminal method.

透明導電層3之厚度例如為10 nm以上,較佳為30 nm以上,更佳為100 nm以上,又,例如為300 nm以下,較佳為160 nm以下。若透明導電層3之厚度為上述下限以上,則可進一步降低透明導電層3之薄片電阻值,從而導電性優異。又,若透明導電層3之厚度為上述上限以下,則可謀求透明導電性玻璃1之薄膜化。透明導電層3之厚度可使用掃描式螢光X射線分析裝置進行測定。The thickness of the transparent conductive layer 3 is, for example, 10 nm or more, preferably 30 nm or more, more preferably 100 nm or more, and, for example, 300 nm or less, and preferably 160 nm or less. If the thickness of the transparent conductive layer 3 is greater than or equal to the above-mentioned lower limit, the sheet resistance value of the transparent conductive layer 3 can be further reduced, so that the conductivity is excellent. When the thickness of the transparent conductive layer 3 is equal to or less than the above-mentioned upper limit, the thickness of the transparent conductive glass 1 can be reduced. The thickness of the transparent conductive layer 3 can be measured using a scanning fluorescent X-ray analyzer.

透明導電層3可為非晶質或結晶質中之任一者,但就導電性(低電阻)之觀點而言,較佳為可列舉結晶質。The transparent conductive layer 3 may be either amorphous or crystalline, but from the viewpoint of conductivity (low resistance), crystalline is preferred.

關於透明導電層為非結晶質抑或結晶質,可藉由以下方法進行判斷,即,例如於透明導電層為ITO層之情形時,於20℃之鹽酸(濃度為5質量%)中浸漬15分鐘後,進行水洗、乾燥,並測定15 mm左右之間之端子間電阻。本說明書中,當在鹽酸(20℃、濃度:5質量%)中進行浸漬、水洗、乾燥後,於15 mm間之端子間電阻超過10 kΩ之情形時,ITO層設為非晶質,於15 mm間之端子間電阻為10 kΩ以下之情形時,ITO層設為結晶質。Whether the transparent conductive layer is amorphous or crystalline can be determined by the following method. For example, when the transparent conductive layer is an ITO layer, it is immersed in hydrochloric acid (concentration: 5% by mass) at 20 ° C for 15 minutes. After that, it was washed with water, dried, and the resistance between terminals was measured between 15 mm. In this specification, when the resistance between the terminals between 15 mm exceeds 10 kΩ after immersion, washing, and drying in hydrochloric acid (20 ° C, concentration: 5 mass%), the ITO layer is made amorphous. When the inter-terminal resistance between 15 mm is 10 kΩ or less, the ITO layer is made crystalline.

2.透明導電性玻璃之製造方法
繼而,對製造透明導電性玻璃1之方法進行說明。透明導電性玻璃1例如可使用圖2所示之製造裝置10,藉由卷對卷方式進行製造。
2. Method for Manufacturing Transparent Conductive Glass Next, a method for manufacturing the transparent conductive glass 1 will be described. The transparent conductive glass 1 can be manufactured by the roll-to-roll method using the manufacturing apparatus 10 shown in FIG. 2, for example.

製造裝置10具備送出輥11、積層部12、加熱部13及捲取輥14。The manufacturing apparatus 10 includes a feed-out roller 11, a lamination section 12, a heating section 13, and a take-up roller 14.

送出輥11係具有用以將玻璃基材2送出至積層部12之旋轉軸的圓柱構件。送出輥11配置於玻璃基材2之搬送方向最上游。送出輥11連接有用以使送出輥11旋轉之馬達(未圖示)。The sending-out roller 11 is a cylindrical member having a rotation shaft for sending the glass substrate 2 to the laminated section 12. The sending-out roller 11 is arrange | positioned most upstream in the conveyance direction of the glass base material 2. The feed roller 11 is connected to a motor (not shown) for rotating the feed roller 11.

積層部12將透明導電層3積層於自送出輥11搬送之玻璃基材2。積層部12例如為濺鍍裝置。積層部12具備與玻璃基材2隔開間隔地對向配置於玻璃基材2之上側之靶(蒸發源)15。The lamination unit 12 laminates the transparent conductive layer 3 on the glass substrate 2 conveyed from the delivery roller 11. The laminated portion 12 is, for example, a sputtering device. The lamination section 12 includes a target (evaporation source) 15 which is disposed on the upper side of the glass substrate 2 and faces the glass substrate 2 at a distance from the glass substrate 2.

靶15由構成透明導電層3之上述無機物材料形成,較佳地可列舉ITO。於靶15包含ITO之情形時,就ITO層之耐久性、結晶化等觀點而言,ITO之氧化錫濃度例如為0.5質量%以上,較佳為3質量%以上,又,例如為15質量%以下,較佳為13質量%以下。The target 15 is formed of the above-mentioned inorganic material constituting the transparent conductive layer 3, and preferably includes ITO. When the target 15 contains ITO, from the viewpoints of durability and crystallization of the ITO layer, the tin oxide concentration of ITO is, for example, 0.5% by mass or more, preferably 3% by mass or more, and, for example, 15% by mass Hereinafter, it is preferably 13% by mass or less.

加熱部13對玻璃基材2及積層於其上之透明導電層3進行加熱。The heating section 13 heats the glass substrate 2 and the transparent conductive layer 3 laminated thereon.

加熱部13配置於積層部12內部。具體而言,加熱部13係與玻璃基材2隔開間隔地對向配置於玻璃基材2之下側。即,加熱部13相對於玻璃基材2,對向配置於與靶15相反之側。The heating section 13 is disposed inside the laminated section 12. Specifically, the heating portion 13 is disposed on the lower side of the glass substrate 2 so as to face the glass substrate 2 at a distance. That is, the heating portion 13 is disposed opposite to the target 15 with respect to the glass substrate 2.

作為加熱部13,具體而言可列舉:紅外線加熱器、烘箱等。Specific examples of the heating unit 13 include an infrared heater and an oven.

捲取輥14係具有用以將自積層部12搬送來之透明導電性玻璃1捲取之旋轉軸的圓柱構件。捲取輥14配置於玻璃基材2之搬送方向最下游。捲取輥14連接有用以使捲取輥14旋轉之馬達(未圖示)。The take-up roller 14 is a cylindrical member having a rotating shaft for taking up the transparent conductive glass 1 conveyed from the laminated layer portion 12. The take-up roller 14 is disposed at the most downstream position in the conveyance direction of the glass substrate 2. The winding roller 14 is connected to a motor (not shown) for rotating the winding roller 14.

首先,準備公知或市售之被捲繞成輥狀之長條玻璃基材2,設置於送出輥11。First, a known or commercially available long glass substrate 2 rolled into a roll shape is prepared and set on a feed roll 11.

再者,就玻璃基材2與透明導電層3之密接性之觀點而言,可視需要對玻璃基材2之下表面或上表面實施例如濺鍍、電暈放電、火焰、紫外線照射、電子束照射、化學處理、氧化等蝕刻處理或底塗處理。又,可藉由溶劑洗淨、超音波洗淨等對玻璃基材2進行除塵、淨化。Furthermore, from the viewpoint of the adhesion between the glass substrate 2 and the transparent conductive layer 3, if necessary, the lower or upper surface of the glass substrate 2 may be subjected to, for example, sputtering, corona discharge, flame, ultraviolet irradiation, or electron beam. Etching treatment such as irradiation, chemical treatment, and oxidation, or primer treatment. In addition, the glass substrate 2 can be dust-removed and purified by solvent washing, ultrasonic washing, and the like.

其後,藉由馬達使送出輥11及捲取輥14旋轉驅動,而將玻璃基材2自送出輥11送出,使其通過積層部12,並藉由捲取輥14捲取。Thereafter, the feed roller 11 and the take-up roller 14 are rotationally driven by a motor, and the glass substrate 2 is sent out from the take-out roller 11, passes through the lamination section 12, and is taken up by the take-up roller 14.

玻璃基材2之搬送速度例如為0.2 m/分鐘以上,較佳為1 m/分鐘以上,又,例如為10 m/分鐘以下,較佳為5 m/分鐘以下。The conveyance speed of the glass substrate 2 is, for example, 0.2 m / min or more, preferably 1 m / min or more, and, for example, 10 m / min or less, and preferably 5 m / min or less.

繼而,於積層部12中,使透明導電層3積層於玻璃基材2之上表面。具體而言,藉由濺鍍法於搬送至積層部12之玻璃基材2之上表面形成透明導電層3。Then, the transparent conductive layer 3 is laminated on the upper surface of the glass substrate 2 in the laminated portion 12. Specifically, a transparent conductive layer 3 is formed on the upper surface of the glass substrate 2 transferred to the buildup section 12 by a sputtering method.

濺鍍法係於真空下實施。具體而言,就抑制濺鍍速率之降低、放電穩定性等觀點而言,濺鍍時之氣壓例如為1 Pa以下,較佳為0.7 Pa以下。The sputtering method is performed under vacuum. Specifically, from the viewpoints of suppressing reduction in sputtering rate, discharge stability, and the like, the gas pressure during sputtering is, for example, 1 Pa or less, and preferably 0.7 Pa or less.

作為濺鍍氣體,例如可列舉Ar等惰性氣體。又,可視需要併用氧氣等反應性氣體。於併用反應性氣體之情形時,反應性氣體之流量比相對於濺鍍氣體及反應性氣體之合計流量比,例如為0.1流量%以上5流量%以下。Examples of the sputtering gas include an inert gas such as Ar. If necessary, a reactive gas such as oxygen may be used in combination. When the reactive gas is used in combination, the flow rate ratio of the reactive gas to the total flow rate ratio of the sputtering gas and the reactive gas is, for example, 0.1 flow% or more and 5 flow% or less.

濺鍍法所使用之電源例如可為DC(Direct Current,直流)電源、AC(Alternating Current,交流)電源、MF(Medium Frequency,中頻)電源及RF(Radio Frequency,射頻)電源中之任一者,又,亦可為其等之組合。The power source used in the sputtering method may be any of DC (Direct Current) power source, AC (Alternating Current) power source, MF (Medium Frequency) power source, and RF (Radio Frequency) power source. Or, it can be a combination of them.

濺鍍時之放電電壓係根據玻璃基材2之搬送速度、濺鍍時之氣壓或電源等而適當決定,例如為200 V以上,較佳為250 V以上,又,例如為500 V以下,較佳為400 V以下。The discharge voltage during sputtering is appropriately determined according to the transport speed of the glass substrate 2 and the pressure or power supply during sputtering. For example, it is 200 V or higher, preferably 250 V or higher, and, for example, 500 V or lower. It is preferably below 400 V.

又,為了形成所需厚度之透明導電層3,亦可實施複數次濺鍍法。In order to form the transparent conductive layer 3 with a desired thickness, a plurality of sputtering methods may be performed.

於形成透明導電層3時,使加熱部13作動而對玻璃基材2、及形成於其上表面之透明導電層3進行加熱。藉此,可於透明導電層3向玻璃基材2積層之同時,使透明導電層3結晶化。When the transparent conductive layer 3 is formed, the heating portion 13 is operated to heat the glass substrate 2 and the transparent conductive layer 3 formed on the upper surface thereof. Thereby, the transparent conductive layer 3 can be crystallized while the transparent conductive layer 3 is laminated on the glass substrate 2.

加熱溫度只要為透明導電層3結晶化之溫度即可,例如為150℃以上,較佳為200℃以上,更佳為300℃以上,又,例如為500℃以下,較佳為400℃以下。The heating temperature may be a temperature at which the transparent conductive layer 3 crystallizes, and is, for example, 150 ° C or higher, preferably 200 ° C or higher, more preferably 300 ° C or higher, and, for example, 500 ° C or lower, preferably 400 ° C or lower.

透明導電層3之加熱時間例如為6秒以上,較佳為12秒以上,又,例如為5分鐘以下,較佳為3分鐘以下。The heating time of the transparent conductive layer 3 is, for example, 6 seconds or more, preferably 12 seconds or more, and, for example, 5 minutes or less, and preferably 3 minutes or less.

藉此,可獲得具備玻璃基材2及透明導電層3之透明導電性玻璃1。更具體而言,可獲得具備玻璃基材2、及配置於其上表面之經結晶化之透明導電層3的透明導電性玻璃1。又,透明導電性玻璃1如圖3所示,可以捲繞成輥狀之輥體4之形式獲得。Thereby, the transparent conductive glass 1 provided with the glass base material 2 and the transparent conductive layer 3 can be obtained. More specifically, a transparent conductive glass 1 including a glass substrate 2 and a crystallized transparent conductive layer 3 disposed on the glass substrate 2 can be obtained. In addition, as shown in FIG. 3, the transparent conductive glass 1 can be obtained as a roll body 4 wound into a roll shape.

再者,可藉由適當變更濺鍍時之條件(放電電壓、氣體流量等)、玻璃基材2之搬送速度、加熱溫度、加熱時間等而將透明導電層3之厚度及其表面粗糙度Ra適當變更為所需之範圍。In addition, the thickness of the transparent conductive layer 3 and its surface roughness Ra can be changed by appropriately changing the conditions (discharge voltage, gas flow rate, etc.) during sputtering, the transfer speed of the glass substrate 2, the heating temperature, and the heating time. Appropriate change to the required range.

其後,視需要藉由公知之蝕刻將透明導電層3圖案化。蝕刻亦可於將透明導電性玻璃1捲取成輥體4之前實施。
或者,亦可於藉由卷對卷方式將透明導電性玻璃1自輥體4送出後實施蝕刻,並再次捲繞成輥狀。
Thereafter, if necessary, the transparent conductive layer 3 is patterned by a known etching. The etching may be performed before the transparent conductive glass 1 is wound into the roll body 4.
Alternatively, the transparent conductive glass 1 may be etched after being sent out from the roll body 4 by a roll-to-roll method, and may be wound again into a roll shape.

透明導電層3之圖案係根據應用透明導電性玻璃1之用途而適當決定,例如可列舉:條紋狀等電極圖案或配線圖案。The pattern of the transparent conductive layer 3 is appropriately determined according to the application to which the transparent conductive glass 1 is applied, and examples thereof include an electrode pattern such as a stripe pattern or a wiring pattern.

蝕刻係例如以與圖案對應之方式,將被覆部(遮蔽帶等)配置於透明導電層3之上,使用蝕刻液對自被覆部露出之透明導電層3進行蝕刻。作為蝕刻液,例如可列舉:鹽酸、硫酸、硝酸、乙酸、草酸、磷酸及其等之混酸等酸。其後,將被覆部自透明導電層3之上表面例如藉由剝離等去除。The etching is, for example, arranging a covered portion (shielding tape, etc.) on the transparent conductive layer 3 so as to correspond to a pattern, and etching the transparent conductive layer 3 exposed from the covered portion using an etchant. Examples of the etching solution include acids such as hydrochloric acid, sulfuric acid, nitric acid, acetic acid, oxalic acid, phosphoric acid, and mixed acids thereof. Thereafter, the covering portion is removed from the upper surface of the transparent conductive layer 3, for example, by peeling or the like.

亦可視需要將保護膜等積層於透明導電性玻璃1之下表面後,與保護膜一起捲繞成輥狀。If necessary, a protective film or the like is laminated on the lower surface of the transparent conductive glass 1 and then rolled together with the protective film into a roll shape.

所獲得之透明導電性玻璃1之厚度例如為10 μm以上,較佳為50 μm以上,又,例如為150 μm以下,較佳為100 μm以下。The thickness of the obtained transparent conductive glass 1 is, for example, 10 μm or more, preferably 50 μm or more, and, for example, 150 μm or less, and preferably 100 μm or less.

於透明導電性玻璃1之上表面(透明導電層3側之表面),刮痕硬度(鉛筆法)例如為5 H以上,較佳為7 H以上。刮痕硬度(鉛筆法)可依據JIS K 5600-5-4進行測定。The scratch hardness (pencil method) on the upper surface of the transparent conductive glass 1 (the surface on the side of the transparent conductive layer 3) is, for example, 5 H or more, and preferably 7 H or more. The scratch hardness (pencil method) can be measured in accordance with JIS K 5600-5-4.

於透明導電性玻璃1之上表面,耐鋼絲絨試驗中之負載例如為2.5 kg以上,較佳為3 kg以上。耐鋼絲絨試驗可藉由將#0000之鋼絲絨對透明導電層3之上表面往復摩擦10次而進行測定,具體而言,利用實施例進行詳細描述。The load on the upper surface of the transparent conductive glass 1 in the steel wool resistance test is, for example, 2.5 kg or more, and preferably 3 kg or more. The steel wool resistance test can be measured by repeatedly rubbing steel wool of # 0000 against the upper surface of the transparent conductive layer 3 10 times. Specifically, the embodiment is described in detail.

輥體4之內徑例如為90 mm以上,較佳為160 mm以上,又,例如為300 mm以下,較佳為200 mm以下。The inner diameter of the roller body 4 is, for example, 90 mm or more, preferably 160 mm or more, and, for example, 300 mm or less, and preferably 200 mm or less.

輥體4之寬度例如為300 mm以上,較佳為500 mm以上,又,例如為1600 mm以下,較佳為1200 mm以下。The width of the roller body 4 is, for example, 300 mm or more, preferably 500 mm or more, and, for example, 1600 mm or less, and preferably 1200 mm or less.

透明導電性玻璃1例如用於圖像顯示裝置等光學裝置。於圖像顯示裝置(具體而言為具有LCD(Liquid Crystal Display,液晶顯示器)模組、有機EL(Electroluminescence,電致發光)模組等圖像顯示元件之圖像顯示裝置)具備透明導電性玻璃1之情形時,透明導電性玻璃1例如用作觸控面板用基材。作為觸控面板之形式,可列舉:光學方式、超音波方式、靜電電容方式、電阻膜方式等各種方式,特別較佳地用於靜電電容方式之觸控面板。The transparent conductive glass 1 is used in an optical device such as an image display device. The image display device (specifically, an image display device having an image display element such as an LCD (Liquid Crystal Display) module, an organic EL (Electroluminescence) module) is provided with a transparent conductive glass In the case of 1, the transparent conductive glass 1 is used as a substrate for a touch panel, for example. As the form of the touch panel, there are various methods such as an optical method, an ultrasonic method, an electrostatic capacitance method, and a resistive film method, and they are particularly preferably used for the electrostatic capacitance type touch panel.

又,透明導電性玻璃1係例如圖像顯示裝置所具備之觸控面板用基材等之一零件,亦即,並非圖像顯示裝置。即,透明導電性玻璃1係用以製作圖像顯示裝置等之零件,且係不包含LCD模組等圖像顯示元件而包含玻璃基材2及透明導電層3、以單獨零件流通且能夠於產業上利用之器件。The transparent conductive glass 1 is a component such as a substrate for a touch panel included in an image display device, that is, it is not an image display device. That is, the transparent conductive glass 1 is a component used to make an image display device and the like, and does not include an image display element such as an LCD module, but includes a glass substrate 2 and a transparent conductive layer 3, which are distributed as separate components and can be Devices used in industry.

而且,該透明導電性玻璃1具備玻璃基材2、及配置於玻璃基材2之上表面之透明導電層3。因此,透明導電性玻璃1可一面抑制因高溫所導致之基材之變形或破損,一面於高溫(例如200℃以上)下使透明導電層3結晶化。因此,可表現優異之導電性。The transparent conductive glass 1 includes a glass substrate 2 and a transparent conductive layer 3 disposed on the upper surface of the glass substrate 2. Therefore, the transparent conductive glass 1 can crystallize the transparent conductive layer 3 at a high temperature (for example, 200 ° C. or higher) while suppressing deformation or breakage of the substrate due to high temperature. Therefore, excellent electrical conductivity can be exhibited.

又,於透明導電性玻璃1中,在玻璃基材2之上表面配置透明導電層3,且透明導電層3之上表面之表面粗糙度Ra為10 nm以下。因此,耐擦傷性優異。In the transparent conductive glass 1, a transparent conductive layer 3 is disposed on the surface of the glass substrate 2, and the surface roughness Ra of the upper surface of the transparent conductive layer 3 is 10 nm or less. Therefore, it is excellent in abrasion resistance.

進而,由於玻璃基材2之厚度為150 μm以下,且具有可撓性,故而玻璃基材2及透明導電性玻璃1能夠捲繞成輥狀。因此,可藉由卷對卷方式進行製造,且生產性優異。Furthermore, since the glass substrate 2 has a thickness of 150 μm or less and has flexibility, the glass substrate 2 and the transparent conductive glass 1 can be wound into a roll shape. Therefore, it can be manufactured by a roll-to-roll method and is excellent in productivity.

3.變化例
以下,對圖1~圖3所示之一實施形態之變化例進行說明。再者,關於該等變化例,亦發揮與上述一實施形態同樣之作用效果。
3. Modification Example A modification example of the embodiment shown in FIGS. 1 to 3 will be described below. In addition, these modified examples also exert the same effects as those of the above-mentioned embodiment.

(1)於使用圖2所示之製造裝置之製造方法中,積層透明導電層3之同時使透明導電層3結晶化,例如雖未圖示,但亦可於積層後實施退火步驟,從而使透明導電層3結晶化。即,可分別實施透明導電層3之積層步驟、及透明導電層3之結晶化步驟。(1) In the manufacturing method using the manufacturing device shown in FIG. 2, the transparent conductive layer 3 is crystallized at the same time as the transparent conductive layer 3 is laminated. For example, although not shown, an annealing step may be performed after the stacking, so that The transparent conductive layer 3 is crystallized. That is, the laminating step of the transparent conductive layer 3 and the crystallization step of the transparent conductive layer 3 may be performed separately.

退火步驟可於大氣下實施,又,亦可於真空下實施。The annealing step may be performed in the atmosphere, or may be performed in a vacuum.

作為退火時之加熱溫度,例如為140℃以上,較佳為180℃以上,又,例如為400℃以下,較佳為300℃以下。The heating temperature during annealing is, for example, 140 ° C or higher, preferably 180 ° C or higher, and, for example, 400 ° C or lower, and preferably 300 ° C or lower.

加熱時間例如為30分鐘以上,較佳為60分鐘以上,又,例如為240分鐘以下,較佳為180分鐘以下。The heating time is, for example, 30 minutes or more, preferably 60 minutes or more, and, for example, 240 minutes or less, and preferably 180 minutes or less.

(2)於使用圖2所示之製造裝置之製造方法中,藉由濺鍍法將透明導電層3積層於玻璃基材2,但例如亦可藉由除濺鍍法以外之乾式方法將透明導電層3積層於玻璃基材2。(2) In the manufacturing method using the manufacturing apparatus shown in FIG. 2, the transparent conductive layer 3 is laminated on the glass substrate 2 by a sputtering method, but for example, the transparent conductive layer 3 may be transparent by a dry method other than the sputtering method. The conductive layer 3 is laminated on the glass substrate 2.

作為此種乾式方法,可列舉:例如真空蒸鍍法、離子鍍覆法等物理蒸鍍法、例如化學蒸鍍法等。
實施例
Examples of such a dry method include a physical vapor deposition method such as a vacuum vapor deposition method and an ion plating method, and a chemical vapor deposition method.
Examples

以下表示實施例及比較例,進一步具體地說明本發明。再者,本發明不限定於任何實施例及比較例。又,以下之記載中所使用之調配比率(含有比率)、物性值、參數等具體數值可替換為上述「實施方式」中所記載之相當於與其等對應之調配比率(含有比率)、物性值、參數等之記載之上限值(定義為「以下」、「未達」之數值)或下限值(定義為「以上」、「超過」之數值)。Examples and comparative examples are shown below to further specifically describe the present invention. The present invention is not limited to any Examples and Comparative Examples. In addition, specific numerical values such as the blending ratio (content ratio), physical property values, and parameters used in the following description may be replaced with the blending ratio (content ratio) and physical property values corresponding to the equivalent values described in the above-mentioned "Embodiment" , Parameters, etc. Record the upper limit (defined as "below", "not reached" value) or the lower limit (defined as "above", "exceed" value).

實施例1
使用圖2所示之製造裝置,藉由卷對卷方式將透明導電層3積層於玻璃基材2,從而製造出輥狀之透明導電性玻璃1。
Example 1
Using the manufacturing apparatus shown in FIG. 2, the transparent conductive layer 3 is laminated on the glass substrate 2 by a roll-to-roll method, thereby producing a roll-shaped transparent conductive glass 1.

具體而言,準備被捲繞成輥狀之長條透明玻璃基材2(厚度100 μm,日本電氣硝子公司製造,「G-Leaf」)。Specifically, a long transparent glass substrate 2 (thickness: 100 μm, manufactured by Nippon Electric Glass Co., Ltd., “G-Leaf”) was prepared to be rolled into a roll shape.

繼而,將玻璃基材2設置於送出輥11,以搬送速度2.7 m/分鐘送出,使其通過濺鍍裝置(積層部)12後捲繞於捲取輥14。Next, the glass substrate 2 was set on a take-out roll 11, and was sent out at a conveying speed of 2.7 m / min. After passing through the sputtering device (layered part) 12, it was wound around a take-up roll 14.

於濺鍍裝置12內,藉由DC濺鍍法,於玻璃基材2之上表面形成厚度為30 nm之ITO層(透明導電層)3。濺鍍係於導入有氬氣98%及氧氣2%之氣壓0.4 Pa之真空氛圍下實施。放電電壓設為292 V。靶15係使用90質量%之氧化銦及10質量%之氧化錫之燒結體。又,於濺鍍裝置12內,使紅外線加熱器(加熱部)13作動,於350℃下將玻璃基材2及ITO層3加熱20秒,從而使ITO層結晶化。In the sputtering device 12, an ITO layer (transparent conductive layer) 3 having a thickness of 30 nm is formed on the upper surface of the glass substrate 2 by a DC sputtering method. Sputtering was performed in a vacuum atmosphere with a pressure of 0.4 Pa in which 98% of argon gas and 2% of oxygen gas were introduced. The discharge voltage is set to 292 V. The target 15 is a sintered body using 90% by mass of indium oxide and 10% by mass of tin oxide. In addition, the infrared heater (heating section) 13 was operated in the sputtering device 12 to heat the glass substrate 2 and the ITO layer 3 at 350 ° C for 20 seconds to crystallize the ITO layer.

藉此,製造出具備玻璃基材2及ITO層3且被捲繞成輥狀之透明導電性玻璃1。As a result, a transparent conductive glass 1 including a glass substrate 2 and an ITO layer 3 and wound in a roll shape is manufactured.

實施例2~4
適當變更搬送速度及放電電壓,且將ITO層之厚度及表面粗糙度變更為表1所記載之厚度及表面粗糙度,除此以外,以與實施例1相同之方式製造透明導電性玻璃。
Examples 2 to 4
A transparent conductive glass was produced in the same manner as in Example 1 except that the transfer speed and the discharge voltage were appropriately changed, and the thickness and surface roughness of the ITO layer were changed to those described in Table 1.

實施例5~6
適當變更搬送速度、放電電壓及加熱溫度,且將ITO層之厚度及表面粗糙度變更為表1所記載之厚度及表面粗糙度,除此以外,以與實施例1相同之方式製造透明導電性玻璃。
Examples 5 to 6
Except for appropriately changing the conveying speed, the discharge voltage, and the heating temperature, and changing the thickness and surface roughness of the ITO layer to those described in Table 1, transparent conductivity was produced in the same manner as in Example 1. glass.

實施例7~8
將透明玻璃基材2之厚度變更為50 μm。又,將濺鍍裝置內之加熱溫度變更為150℃,將非晶質之ITO層積層於玻璃基材後,於200℃下且於大氣下實施180分鐘之退火,從而使ITO層結晶化,且將透明導電層之厚度及表面粗糙度變更為表1所記載之厚度及表面粗糙度。除上述以外,以與實施例1相同之方式製造透明導電性玻璃。
Examples 7 to 8
The thickness of the transparent glass substrate 2 was changed to 50 μm. In addition, the heating temperature in the sputtering device was changed to 150 ° C, and an amorphous ITO layer was laminated on the glass substrate, and then annealed at 200 ° C for 180 minutes in the atmosphere, thereby crystallizing the ITO layer. The thickness and surface roughness of the transparent conductive layer were changed to those described in Table 1. Except for the above, a transparent conductive glass was produced in the same manner as in Example 1.

比較例1~3
適當變更搬送速度及放電電壓,且將ITO層之厚度及表面粗糙度變更為表1所記載之厚度及表面粗糙度,除此以外,以與實施例1相同之方式製造透明導電性玻璃。
Comparative Examples 1 to 3
A transparent conductive glass was produced in the same manner as in Example 1 except that the transfer speed and the discharge voltage were appropriately changed, and the thickness and surface roughness of the ITO layer were changed to those described in Table 1.

比較例4
準備環烯烴系聚合物(厚度28 μm,日本瑞翁公司製造,「ZEONOR」)作為透明基材,且將加熱部之加熱溫度設為60℃,將退火溫度設為150℃,除此以外,以與實施例7相同之方式製造透明導電性樹脂膜。
Comparative Example 4
A cycloolefin polymer (thickness: 28 μm, manufactured by Rihon Co., Ltd., "ZEONOR") was prepared as a transparent substrate, and the heating temperature of the heating section was set to 60 ° C and the annealing temperature was set to 150 ° C. A transparent conductive resin film was produced in the same manner as in Example 7.

(評估)
按照下述,評估各實施例及各比較例之透明導電性玻璃(其中,比較例4係使用透明導電性樹脂膜)之物性。將其等之結果示於表1。
(Evaluation)
The physical properties of the transparent conductive glass of each Example and Comparative Example (wherein Comparative Example 4 uses a transparent conductive resin film) were evaluated in the following manner. The results are shown in Table 1.

(玻璃基材之極限彎曲強度)
以下述順序測定各實施例及各比較例所使用之玻璃基材(厚度T:100 μm、50μm)之極限彎曲強度。
(1)將玻璃基材切斷成寬度50 mm×長度120 mm,設為樣品20。
(2)如圖4所示,將樣品20之長度方向兩端部21固定於治具22,使樣品20之長度方向兩端部21相互逐漸靠近。
(3)測定樣品20斷裂時之樣品之長度方向兩端部21之距離D。
(4)藉由式「σM =(E×T)/D」算出極限彎曲應力σM 。再者,E表示玻璃基材之楊氏模數,為73000 MPa。
(Ultimate bending strength of glass substrate)
The ultimate bending strength of the glass substrate (thickness T: 100 μm, 50 μm) used in each example and each comparative example was measured in the following procedure.
(1) The glass substrate was cut into a width of 50 mm × a length of 120 mm, and was set as sample 20.
(2) As shown in FIG. 4, the longitudinal end portions 21 of the sample 20 are fixed to the jig 22, and the longitudinal end portions 21 of the sample 20 are gradually brought closer to each other.
(3) The distance D between both ends 21 in the longitudinal direction of the sample when the sample 20 is broken is measured.
(4) The ultimate bending stress σ M is calculated by the formula “σ M = (E × T) / D”. In addition, E represents the Young's modulus of the glass substrate and is 73000 MPa.

其結果為,於厚度為100 μm之情形時,玻璃基材之極限彎曲應力為170 MPa,於厚度為50 μm之情形時,玻璃基材之極限彎曲應力為350 MPa。As a result, when the thickness is 100 μm, the ultimate bending stress of the glass substrate is 170 MPa, and when the thickness is 50 μm, the ultimate bending stress of the glass substrate is 350 MPa.

(表面粗糙度)
於各實施例及各比較例之透明導電性玻璃中,使用原子力顯微鏡(Veeco公司製造,「Nanoscope4」)測定ITO層之上表面之表面粗糙度Ra。
(Surface roughness)
In the transparent conductive glass of each example and each comparative example, the surface roughness Ra of the upper surface of the ITO layer was measured using an atomic force microscope (manufactured by Veeco, "Nanoscope 4").

(ITO層之厚度)
使用掃描式螢光X射線分析裝置(Rigaku公司製造,「ZSX PrimusII」)測定各實施例及各比較例之透明導電性玻璃之ITO層之厚度。
(Thickness of ITO layer)
The thickness of the ITO layer of the transparent conductive glass of each example and each comparative example was measured using a scanning fluorescent X-ray analyzer (manufactured by Rigaku, "ZSX PrimusII").

(薄片電阻、比電阻)
依據JIS K7194,利用四端子法測定各實施例及各比較例之透明導電性玻璃之ITO層之薄片電阻。繼而,根據薄片電阻及ITO層之厚度算出比電阻。
(Sheet resistance, specific resistance)
In accordance with JIS K7194, the four-terminal method was used to measure the sheet resistance of the ITO layer of the transparent conductive glass of each example and each comparative example. Then, the specific resistance was calculated from the sheet resistance and the thickness of the ITO layer.

(利用鉛筆法所得之刮痕硬度)
依據JIS K 5600-5-4,測定對各實施例及各比較例之透明導電性玻璃之透明導電層之刮痕硬度。
(Scratch hardness obtained by pencil method)
In accordance with JIS K 5600-5-4, the scratch hardness of the transparent conductive layer of the transparent conductive glass of each example and each comparative example was measured.

(耐鋼絲絨試驗)
使用#0000之鋼絲絨(SW)以10 g/cm2 負載對各實施例及各比較例之透明導電性玻璃之ITO層往復摩擦10次,確認表面是否產生傷。繼而,以使負載變大之方式進行變更,與上述同樣地確認傷之產生。反覆進行該作業直至可確認傷之產生為止,將產生傷之時間點之負載示於表1。

[表1]
表1
(Steel wool resistance test)
Using the steel wool (SW) of # 0000, the ITO layer of the transparent conductive glass of each example and each comparative example was rubbed back and forth 10 times with a load of 10 g / cm 2 to confirm whether the surface was damaged. Then, the load was changed so as to increase the load, and the occurrence of injury was confirmed in the same manner as described above. This operation is repeated until the occurrence of the injury can be confirmed, and the load at the time of the injury is shown in Table 1.

[Table 1]
Table 1

再者,上述發明係作為本發明之例示之實施形態而提供,其等僅為例示,不應限定性地解釋。該技術領域之業者所清楚之本發明之變化例包含於下述申請專利範圍。The above invention is provided as an exemplary embodiment of the present invention, and these are merely examples and should not be interpreted in a limited manner. Variations of the present invention that are clear to those skilled in the art are included in the following patent application scope.

1‧‧‧透明導電性玻璃1‧‧‧ transparent conductive glass

2‧‧‧玻璃基材 2‧‧‧ glass substrate

3‧‧‧透明導電層 3‧‧‧ transparent conductive layer

4‧‧‧輥體 4‧‧‧ roller

10‧‧‧製造裝置 10‧‧‧Manufacturing equipment

11‧‧‧送出輥 11‧‧‧ send out roller

12‧‧‧積層部 12‧‧‧Laminated Department

13‧‧‧加熱部 13‧‧‧Heating section

14‧‧‧捲取輥 14‧‧‧ take-up roller

15‧‧‧靶 15‧‧‧ target

21‧‧‧樣品之長度方向兩端部 21‧‧‧ samples at both ends in the length direction

22‧‧‧治具 22‧‧‧Jig

D‧‧‧樣品之長度方向兩端部之距離 D‧‧‧ The distance between the two ends of the sample in the length direction

圖1表示本發明之透明導電性玻璃基材之一實施形態之剖視圖。FIG. 1 is a cross-sectional view showing an embodiment of a transparent conductive glass substrate according to the present invention.

圖2表示圖1所示之透明導電性玻璃之製造步驟圖。 FIG. 2 is a diagram showing the manufacturing steps of the transparent conductive glass shown in FIG. 1. FIG.

圖3表示圖1所示之透明導電性玻璃之輥體之立體圖。 FIG. 3 is a perspective view of a roller body of the transparent conductive glass shown in FIG. 1.

圖4表示於實施例中測定玻璃基材之可撓性之試驗之模式圖。 FIG. 4 is a schematic diagram showing a test for measuring the flexibility of a glass substrate in an example.

Claims (3)

一種透明導電性玻璃,其特徵在於具備: 玻璃基材,其厚度為150 μm以下且具有可撓性;及 透明導電層,其配置於上述玻璃基材之厚度方向一側;且 上述透明導電層之厚度方向其中一面之表面粗糙度Ra為10 nm以下。A transparent conductive glass, comprising: Glass substrates with a thickness of 150 μm or less and flexibility; and A transparent conductive layer disposed on one side of the glass substrate in the thickness direction; and The surface roughness Ra of one surface of the transparent conductive layer in the thickness direction is 10 nm or less. 如請求項1之透明導電性玻璃,其中 上述透明導電層之比電阻為2.5×10-4 Ω・cm以下。For example, the transparent conductive glass of claim 1, wherein the specific resistance of the transparent conductive layer is 2.5 × 10 -4 Ω · cm or less. 如請求項1或2之透明導電性玻璃,其被捲繞成輥狀。The transparent conductive glass as in claim 1 or 2 is wound into a roll shape.
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