TW201935604A - Auto-calibration to a station of a process module that spins a wafer - Google Patents

Abstract

A method for calibration including determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process. The method includes delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset. The method includes rotating the wafer over the pedestal by an angle. The method includes removing the wafer from the pedestal by the robot and measuring an exit offset. The method includes determining a magnitude and direction of the temperature induced offset using the entry offset and exit offset.

Description

Automatic calibration of processing stations for processing modules for rotating wafers

Embodiments of the present invention relate to robots, especially robots used in wafer processing systems. [Priority claim]

This application claims the priority of the co-owned U.S. Provisional Application No. 62 / 595,454 "AUTO-CALIBRATION TO A STATION OF A PROCESS MODULE THAT SPINS A WAFER" (filed on December 6, 2017) and its rights and interests as a whole The contents are incorporated herein by reference. [Cross References in Related Applications]

This application is about US Patent Application No. 15 / 291,549 "WAFER POSITIONING PEDESTAL FOR SEMICONDUCTOR PROCESSING" filed on October 12, 2016.

In semiconductor processing systems, robots are used to move wafers from one location to another. For example, one or more robots can be used to pick up wafers from a wafer cassette in the loading port, move the wafers to a load lock, and move the wafers to one or more intermediate positions (Such as a transport module), and move the wafer to a processing module or reactor for wafer processing.

To accurately place and pick up a wafer, the robot needs to know the coordinates of each location in the wafer processing system. After the robot is installed in the wafer processing system, the coordinates can be programmed to the corresponding robot during the setting process. In this way, the hand-off positions used by the robot are known. For example, a robot can be used to transfer wafers from a transport module to a processing module, such as the center of a pedestal. Generally, a technician or a field service engineer performs a setup process when the processing module is cold. However, once the processing module is under vacuum or heated to a higher temperature, the coordinates of a specific location (such as the center of the base) within the processing module may have moved. Accordingly, it is desirable to be able to accurately place a wafer at a specific position during processing conditions to reduce errors caused during wafer processing and to achieve a smaller form factor of semiconductor devices and / or integrated circuits.

The background description provided herein is for the purpose of presenting the present invention in general. The work product of the presently named inventors described in this background paragraph, and implementations that may not otherwise qualify as a description of conventional technology when making an application, have not been explicitly or implicitly stated. It is recognized as a relative technique with respect to the present invention.

The disclosure will be presented in this article.

This specific embodiment relates to solving one or more of the problems found in the related technology, and in particular, to measuring an offset of a specific position within a processing module under conditions, such as a position associated with a device.

A specific embodiment of the present invention includes a calibration method, including: determining a temperature-induced shift of a base of a processing module under a temperature condition of a manufacturing process. The method includes: transferring a wafer to the base of the processing module by a robot, and detecting a shift-in offset value. The method includes rotating the wafer on the base by an angle. The method includes: removing the wafer from the pedestal by the robot, and measuring a removal offset value. The method includes: using the shift-in offset value and the shift-out offset value to determine the magnitude and direction of the temperature-induced shift.

A specific embodiment of the present invention includes a correction method. The method includes: establishing a reference coordinate system according to an initial correction position of a rotation axis of a rotation device in a processing module. The method includes applying a condition to the processing module. The method includes using a transfer module (TM) robot to pick up a calibration wafer from an inbound load lock, the transfer module (TM) robot configured to transfer the calibration wafer to the processing module. The method includes: when the calibration wafer is transferred to the processing module, using a measurement device to determine a first measurement value of the calibration wafer in the reference coordinate system, the measurement device is fixed in the reference coordinate system . The method includes using the TM robot to deliver the calibration wafer to the processing module. The method includes: placing the calibration wafer in the rotating device. The method includes using the rotating device to rotate the calibration wafer by an angle. The method includes using the TM robot to move the calibration wafer out of the processing module. The method includes: when the calibration wafer is delivered to an outbound load lock, using the measurement device to determine a second measurement value of the calibration wafer in the reference coordinate system. The method includes: determining a condition correction amount of the rotation axis according to the first measurement value and the second measurement value, the condition correction amount corresponding to that the rotation axis deviates from the initial value when the processing module is under the condition. Correct the position offset.

A specific embodiment of the present invention includes another correction method. The method includes: establishing a reference coordinate system according to an initial correction position of a rotation axis of a rotation device in a processing module. The method includes: using a transfer module (TM) robot to move a calibration wafer out of the processing module from the initial calibration position, using a measurement device fixed in the reference coordinate system to establish the calibration in the reference coordinate system. Wafer calibration reference measurement. The calibration wafer is set to be centered on the rotation axis so that the calibration reference measurement value is aligned with the initial calibration position of the rotation axis. The method includes: using the rotating device in the processing module to rotate an angle around the rotation axis according to the calibration wafer, and measuring a condition correction amount of the rotation axis, the condition correction amount corresponding to when the processing module is at Under a condition, the rotation axis is offset from the initial correction position. The method includes using the TM robot to pick up a processing wafer from an inbound load lock. The method includes: when the processing wafer is transported to the processing module, using the measuring device to measure an alignment measurement value of the processing wafer in the reference coordinate system. The method includes: determining an alignment correction amount of the processing wafer according to the alignment measurement value, the alignment correction amount corresponding to an offset of the processing wafer from the correction reference measurement value. The method includes using the TM robot to apply the condition correction amount to the processing wafer. The method includes using the TM robot to apply the alignment correction amount to align the processing wafer with the rotation axis offset from the initial correction position.

Embodiments of the invention include a system for processing a wafer. The system includes a processing module including a rotating device having a rotating shaft. The system includes a reference coordinate system that is based on an initial correction position of the rotation axis of the rotation device. The system includes a transfer module (TM) robot configured to move a wafer into or out of a processing module. The system includes a measurement device fixed in the reference coordinate system, and the measurement device intercepts wafers moved into or out of the processing module. The system includes a processor and a memory. The memory is coupled to the processor and has instructions stored therein. When the instructions are executed by the processor, the processor executes a calibration method. The method includes: establishing a reference coordinate system according to an initial correction position of a rotation axis of a rotation device in the processing module. The method includes applying a condition to the processing module. The method includes using the TM robot to pick up a calibration wafer from an inbound load lock, the TM robot being configured to transfer the calibration wafer to the processing module. The method includes: when the calibration wafer is transferred to the processing module, using a measurement device to determine a first measurement value of the calibration wafer in the reference coordinate system, the measurement device is fixed in the reference coordinate system . The method includes: delivering the calibration wafer to the processing module. The method includes: placing the calibration wafer in the rotating device. The method includes using the rotating device to rotate the calibration wafer by an angle. The method includes using the TM robot to move the calibration wafer out of the processing module. The method includes: when the calibration wafer is delivered to an outbound load lock, using the measurement device to determine a second measurement value of the calibration wafer in the reference coordinate system. The method includes: determining the condition correction amount of the rotation axis according to the first measurement value and the second measurement value, the condition correction amount corresponding to that the rotation axis deviates from the rotation axis when the processing module is under a condition. The offset of the initial correction position.

Those skilled in the art will understand these and other advantages through the entire specification and the scope of patent application.

Although the following detailed description contains many specific details for the purpose of illustration, those skilled in the art will understand that many variations and modifications of the following details are within the scope of the present invention. Accordingly, the aspects of the present invention described below are described without reducing or reducing the generality of the scope of subsequent patent applications.

In summary, various embodiments of the present invention describe a system and method for correcting a rotation axis deviation of a rotating device (such as a rotating base) in a processing module. In this way, the specific embodiment of the present invention can reduce the misalignment of the loaded wafer that is transferred to a correction position (such as a rotating shaft, where the correction position has been moved after the processing conditions are applied to the processing module) in the processing module. The error. By correcting this conditional offset, the form factor of the semiconductor device and the integrated circuit including the semiconductor device can be reduced.

With the foregoing general understanding of many specific embodiments, exemplary details of the specific embodiments will now be described with reference to various drawings. Similar numbered elements and / or components in one or more drawings mean generally the same configuration and / or function. In addition, the drawings may not be drawn to scale but are intended to illustrate and emphasize new concepts. Obviously, specific embodiments of the present invention may be implemented without some or all of these specific details. On the other hand, well-known process operations will not be described in detail herein to avoid unnecessary confusion to the specific embodiment.

A specific embodiment of the present invention relates to a calibration module coupled to a plasma processing module (such as a plasma processing module used in atomic layer deposition (ALD) and plasma-assisted chemical vapor deposition (PECVD) processes). Methods and equipment for robots and / or tool systems. The specific embodiments of the present invention can be implemented in various processing module configurations. In addition, the specific embodiments of the present invention are not limited to the embodiments provided herein, and may adopt different configurations, geometric configurations, and plasma generation technologies (such as inductive coupling systems, capacitive coupling systems, electronic cyclotron resonance systems, microwave systems, etc.) ) In different plasma treatment systems. Plasma processing systems and plasma processing modules are disclosed in co-owned US Patent Nos. 8,862,855, 8,847,495, and 8,485,128 and US Patent Application No. 15 / 369,110.

FIG. 1 is a plasma processing system 100 for processing a wafer, for example, forming a film on a substrate, such as a film formed in an ALD and PECVD process. System 100 is configured to process wafers to produce semiconductor devices. For example, front-open wafer transfer boxes (FOUPs) (not shown) are configured to hold one or more wafers and move wafers into And move out of the system 100 and move within the system 100. The FOUP can be connected to the load port 160 to transfer wafers. In particular, during the processing, the wafers can be transferred between the equipment front-end module (EFEM) 150 and the respective processing module (PM) 110 in the FOUP by the transfer module 190. The load port 160 is configured to move wafers into and out of the EFEM 150 during pre-processing and post-processing.

EFEM 150 is configured to move wafers between the atmosphere and vacuum (the processing environment of PM 110). The EFEM 150 is configured to move a wafer between a FOUP and a load lock 170. The transfer robot 131 (such as a robot arm and the like) transfers the wafer between the loading port 160 and the appropriate load lock 170 along the track 152. The plurality of gate valves 180, the conveying module 190, and the processing module 110 combined with the load lock 170 can be used to maintain or generate appropriate pressure (such as atmospheric pressure, vacuum, and the transition state between the two). The gate valve 180 is configured to isolate components during wafer movement and / or processing, especially when the wafer is exposed to various pressures in the processing system 100. For example, the gate valve 180 can isolate the EFEM 150, the load lock 170, the transfer module 190, and the processing module 110. The load lock 170 includes a transfer device that transfers a substrate (such as a wafer in a FOUP) from the EFEM 150 to the transfer module 190. Before entering the vacuum environment maintained by the conveying module 190, the load lock 170 can be evacuated under pressure or vented to atmospheric pressure before entering the EFEM 150. For example, the load lock 170 can be coupled to a vacuum source (not shown). In this way, when the gate valve 180 is closed, the load lock 170 can be evacuated. Accordingly, the load lock 170 may be configured to maintain a desired pressure, such as when transferring wafers between the load lock 170 and the transfer module 190 under vacuum pressure, or between the load lock 170 and the EFEM 150 under atmospheric pressure. Between wafers.

The transfer module 190 is configured to move a substrate (such as a wafer in the load lock 170) into and out of the processing module 110 through the gate valve 180. In one aspect, the gate valve 180 includes a controllable opening (such as a loading door) to allow access to adjacent modules (such as the transport module 190, EFEM 150, processing module 110, etc.). Within the transfer module 190, a transfer robot 132 (such as a robotic arm and the like) is configured to use the track 133 to move the processing wafer 101 in a vacuum environment, such as transferring wafers between the processing modules 110, or moving in and Remove the load lock 170. The conveying module 190 and the processing module 110 are usually operated under vacuum, and can be coupled with one or more vacuum sources (not shown) to maintain a proper vacuum pressure.

One or more processing modules 110 may be coupled to the transport module 190. Each processing module 110 is configured to process a wafer, or any suitable subject that must be processed in a vacuum or other controlled environment. The processing module 110 may be configured in a single station or multiple stations. The drawn processing module 110 includes four processing stations, which are numbered from 1 to 4 in the specific embodiment shown in FIG. 1. For example, the processing module 110 may be configured to perform one or more semiconductor processes. In one aspect, the processing module 110 includes a plasma processing chamber. Generally speaking, the processing module 110 can generate plasma by various mechanisms, such as inductive coupling (transformer coupling), spiral wave, electronic cyclotron resonance, and capacitive coupling (parallel plate). For example, high-density plasmas can be generated in a transformer coupled plasma (TCPTM) processing chamber or an electron cyclotron resonance (ECR) processing chamber. An example of a high-flow plasma processing chamber or processing module providing a high-density plasma is disclosed in commonly owned US Patent No. 5,948,704. In order to illustrate the chamber located in the processing module, parallel plate plasma processing chambers, electronic cyclotron resonance (ECR) have been disclosed in commonly-owned U.S. Patent Nos. 4,340,462, 4,948,458, 5,200,232, and 5,820,723. Plasma processing chamber and transformer coupled plasma (TCPTM) processing chamber.

FIG. 2 is a top view of a multi-station processing tool or processing module 110, which provides four processing stations. This top view is the lower chamber portion 102b (for example, the top chamber portion is removed for illustration), in which four processing stations are operated by spider forks 226. Each cross or fork includes first and second arms, each of which surrounds a portion of each side of the base 140. In this figure, the crosses 226 are shown by dashed lines to indicate that they are located below the carrier ring 200. The crosses 226 using the engagement and rotation mechanism 220 are configured to lift and lift the load ring 200 (ie, from the lower surface of the load ring 200) from the processing station at the same time, and then lower the load ring 200 before (At least one carrier ring supports the wafer 101) At least one or more processing stations are rotated forward to the next position, and further plasma processing, processing, and / or film deposition can be performed on the corresponding wafer 101 accordingly.

FIG. 3 is a schematic diagram of a specific embodiment of a multi-station processing tool or processing module 110 having an inbound load lock 302 and an outbound load lock 304. The robot 131 under atmospheric pressure is configured to move the substrate from the magazine loaded via the pod 308 to the inbound load lock 302 via the atmospheric port 310. The inbound load lock 302 is coupled to a vacuum source (not shown). Accordingly, when the atmospheric port 310 is closed, the inbound load lock 302 can be evacuated. The inbound load lock 302 also includes a chamber transfer port 316 connected to the processing chamber 102b. Therefore, when the chamber transfer port 316 is opened, another robot (not shown, such as the robot 312 of the vacuum transfer module 190) can move the substrate from the inbound load lock 302 to the base 140 of the first processing station to For processing.

The drawn processing chamber 102b includes four processing stations, which are numbered from 1 to 4 in the specific implementation shown in FIG. In certain embodiments, the processing chamber 102b may be configured to maintain a low-pressure environment, so that the substrate can be transported between processing stations using the carrier ring 200 without being damaged by vacuum and / or without being exposed to air. Each processing station depicted in FIG. 3 includes a processing station substrate firmware (shown at 318 of processing station 1) and a processor body transmission pipeline entrance.

FIG. 3 also illustrates a cross 226 for transferring a substrate in the processing chamber 102b. The crosses 226 rotate the wafer and can transport the wafer from one processing station to another processing station. By lifting the cross fork 226 from the outer lower surface to the load ring 200 to lift the wafer, and transferring the wafer and the carrier to the next processing station together, transport can be achieved. In one aspect, the crosses 226 are made of ceramic material to withstand high heat levels during processing.

4A to 4E are process diagrams for measuring the offset, which is an initial correction position offset from the rotation axis of the rotating device in the processing module. In a specific embodiment of the present invention, the offset is applied to the processing module Due to processing conditions.

In particular, FIG. 4A shows a loading calibration wafer 405 according to an embodiment of the present invention, which is loaded into a multi-station processing module, and shows the orientation of the loading calibration wafer 405 to determine the processing module under processing conditions. Offset of device rotation axis within 110. Specifically, the robot 132 transfers the calibration wafer from the vacuum transfer module 190 to the processing module 110 through the gate valve 180. The calibration wafer 405 is transferred to the processing station 140 closest to the gate valve 180. The processing station 140 may include a pedestal to support the wafer. The orientation of the calibration wafer 405 is indicated by a notch 406. In the loading orientation, the notch 406 is directed to the processing station 140, so that the notch 406 first enters the gate valve or passes through the AWC sensor as the calibration wafer 450 is loaded.测 器 410 410.

As described previously, the processing module 110 is configured to process wafers in a vacuum or controlled environment. For example, the processing module 110 may be configured to perform one or more semiconductor processes. For example, the processing module 110 includes a multi-station plasma processing chamber for generating plasma to facilitate various processes, including depositing materials or etching processes during deposition, such as ALD and PECVD processes. The chamber may include one or more electrodes, a substrate support, an electrostatic chuck in the substrate support (configured to include an electrode applying a high voltage bias to generate an electrostatic holding force that holds the wafer in place), one or more Multi-gas nozzle and gas control mechanism to control the distance between the substrate support and the nozzle. For the sake of brevity and clarity, the various other components of the chamber and / or processing module 110 that are well known to those skilled in the art will not be described in detail, but it can be expected and fully supported.

In addition, the processing station 140 may include a lifting pad (also referred to as a twist pad) for rotation. The lifting pad is configured to lift the wafer away from the susceptor 140 and rotate the wafer disposed thereon relative to the processing module 110 and / or the corresponding susceptor 140. For illustration purposes, the lifting pad may be used in a processing module 110 for ALD and PECVD processes and / or applications. For example, one or more motors may be configured to lift the wafer processing pedestal 140 (as a function of an existing pedestal lifting device), and use a lifting pad to lift the wafer away from the pedestal. In a specific embodiment, the size of the lifting pad is substantially the same as that of the wafer. In another specific embodiment, the size of the lift pad is smaller than the wafer. The lifting pad can be controlled separately from the base, so that the lifting pad can be separated from the base for the purpose of rotation. For example, once the lifting pad is separated from the base, the wafer supported by the lifting pad rotates as the lifting pad rotates. According to this, the base 140 and the processing chamber or processing module surrounding the base are kept fixed relative to the lifting pad in rotation.

In a specific embodiment of the present invention, in order to determine the offset of the rotation axis of the device in the processing module 110 (this offset is caused by the processing conditions applied to the processing module 110), any processing module can be used. The rotating device in 110 performs wafer rotation. For example, the rotating device may be located on an end effector of a mandrel or a cross to rotate the processing station and / or the base 140 in the processing module 110. One type of mandrel may be the rotating mechanism 220 and / or the cross fork 226 mentioned in FIG. 2. The rotating device is configured to rotate the wafer as the entire mandrel rotates vertically between the processing stations 140. For example, in a specific embodiment, the rotating device on the end effector can effectively rotate the wafer between 0-180 degrees clockwise or counterclockwise, and the mandrel system simultaneously moves the wafer from four or more processing stations. A processing station in group 110 is transferred to another processing station (eg, processing stations separated by 90, 180, or 270 degrees). The wafer rotating mechanism and / or device are arranged concentrically on a spindle end effector that is performing wafer transfer.

As shown in FIG. 4A, the gate valve 180 may include an active wafer centering (AWC) sensor 410. The AWC sensors 410 are configured to measure and correct the wafer position during transportation, as further described in FIGS. 4E, 6A-6B, and 7 below. For example, the AWC sensors 410 may be vertically-mounted through-beam sensors. The AWC sensors 410 may be installed so that the corresponding light beams extend along the Z axis (perpendicular to the page of FIG. 4A). Accordingly, the AWC sensor 410 can detect when its respective light beam is destroyed, for example, when an opaque object (such as a wafer or a part of an end effector) blocks its light beam. In general, the wafer can trigger the AWC sensor 410 two or more times during wafer transfer (for example, the wafer can pass through the AWC sensor 410 in one direction or pass back and forth to increase Number of data points). Up to four points on the wafer can be triggered to measure the positioning / position of the wafer (such as the center of the wafer) within a reference coordinate system (not shown). This positioning can be used for alignment correction and to determine the conditional deviation of the rotation axis of the rotation device in the processing module 110. For example, the AWC sensor 410 may be part of a measurement device that is used to measure the wafer position relative to the data correction group. The data calibration group generates a calibration reference measurement that is aligned with the initial calibration position of the rotation axis (such as during a cold setting). During the setting of the tool, the wafer is placed on the center of the pedestal 140 by using the centering technology (such as feature alignment). The calibration wafer 405 is picked up by the robot 132, and the calibration wafer 405 is moved into or out of the processing module 110 at full speed. At the same time, when the sensing beam corresponding to the AWC sensor 410 is destroyed, the calibration wafer in the reference coordinate system is recorded. Robot position (for example, where the measuring device is fixed in a reference coordinate system). The measurement data is used to determine the wafer position within the reference coordinate system. An example of the use of an AWC sensor for calibrating a robot is disclosed in commonly owned US Patent No. 6,934,606.

FIG. 4B shows a calibration wafer 405 carried out in a specific embodiment of the present invention, which is output from the multi-station processing module 110 described in FIG. 4A and shows the orientation of the calibration wafer 405 carried out to determine processing conditions. Offset of the rotation axis of the device in the lower processing module. Specifically, the robot 132 transfers the calibration wafer from the processing module 110 to the transfer module 190 through the gate valve 180. The orientation of the calibration wafer 405 is indicated by a notch 406 (at the output orientation). The notch 406 has been rotated by an angle and faces away from the processing station 140. Accordingly, the notch 406 is Enter the gate valve or pass AWC sensor 410 first. That is, the wafer has been rotated approximately 180 degrees between the two orientations of the loading calibration wafer 405 and the loading calibration wafer 405. In a specific embodiment, the rotation of the calibration wafer 405 may be an angle between a range of greater than 0 degrees and equal to or less than 180 degrees, which is used to determine the deviation of the rotation action of the processing module under the processing conditions. In a specific embodiment, the wafer rotation angle may be one of the following angles: about 5, 10, 20, 25, 30, 35, 40, 45, 55, 60, 65, 70, 75, 80, 85, 90 , 95, 100, 105, 110, 115, 120, 125, 130, 135, 140, 145, 150, 155, 160, 165, 170, 175 and 180 degrees. In a specific embodiment, the rotation of the calibration wafer 405 may be an effective angle defined within a valid range, where one range is defined as greater than 0 and as large as 15 degrees, and the other is defined as between 5 and 20 degrees Another range is defined between 10 and 25 degrees, another range is defined between 15 and 30 degrees, another range is defined between 20 and 35 degrees, another range is defined between 25 and 40 degrees, and another Range is defined between 30 and 45 degrees, another range is defined between 35 and 50 degrees, another range is defined between 40 and 55 degrees, another range is defined between 45 and 60 degrees, and another range is defined 50 to 65 degrees, another range is defined as 55 to 70 degrees, another range is defined as 60 to 75 degrees, another range is defined as 65 to 80 degrees, and another range is defined as 70 Between 85 and 85 degrees, another range is defined between 75 and 90 degrees, another range is defined between 80 and 95 degrees, another range is defined between 85 and 100 degrees, and another range is defined between 90 and 105 Between degrees, another range is defined between 95 and 110 degrees, another range is defined between 100 and 115 degrees, and another range is defined between 105 and 120 degrees Another range is defined between 110 and 125 degrees, another range is defined between 115 and 130 degrees, another range is defined between 120 and 135 degrees, another range is defined between 125 and 140 degrees, and another Range is defined between 130 and 145 degrees, another range is defined between 135 and 150 degrees, another range is defined between 140 and 155 degrees, another range is defined between 145 and 160 degrees, and another range is defined Between 150 and 165 degrees, another range is defined between 155 and 170 degrees, another range is defined between 160 and 175 degrees, another range is defined between 165 and 180 degrees, and another range is defined as 170 To 185 degrees, another range is defined as 175 to 190 degrees.

FIG. 4C shows the deviation of the rotation axis of the rotating device (such as a lifting pad) in the processing module 110 under the processing conditions (such as high temperature, vacuum, etc.) according to a specific embodiment of the present invention. The measured values of the loaded calibration wafer 405 and the loaded calibration wafer 405 are described. When the processing module 110 is under processing conditions, a specific embodiment of the present invention is used to instruct a robot (such as TM robot 132) to a processing station (such as moving to the center of the base 140). For each arm of the robot 132, the motion coordinate system of the TM robot 132 may be radial (R), θ (T), and vertical (Z). Another kinematic coordinate system of the TM robot 132 may be an X-axis, a Y-axis, and a Z-axis. There are other coordinate systems that can be supported. In the past, placing any sensor in the processing module 110 has been a challenge for most PECVD or ALD semiconductor processing applications, because it can cause the sensor to be exposed to high temperatures (such as 650 degrees Celsius) or possibly Under vacuum. That is, the sensor cannot be operated when processing conditions are applied to the processing module 110. According to this, before the specific embodiment of the present invention, it is not possible to determine the offset of any point of the processing module caused by applying the processing conditions to the processing module.

The specific embodiment of the present invention uses the rotating device in the processing module 110 to rotate the calibration wafer 405 by an angle (between the orientation of the loaded calibration wafer 405 and the orientation of the carried out calibration wafer 405), and uses the processing module A measurement device (such as AWC sensor 410) outside 110 measures the loading and unloading of the calibration wafer 405 to determine the offset of the rotation axis of the rotating device in the processing module 110. Specifically, the movement of the (measured) loading calibration wafer 405 to the (measured) loading calibration wafer refers to the offset of the rotation axis of the rotating device, which is from the application of processing conditions to the processing Caused by module 110, this will be further described in FIGS. 6A to 6B.

Generally, an AWC sensor 410 (such as measurement value # 1) can be used to measure the offset (such as the measured offset 420) relative to the loaded calibration wafer 405 of the AWC coordinate system. For example, the offset is measured from a perfectly aligned wafer measurement (such as the center of the AWC coordinate system) as defined by the AWC coordinate system. After the wafer is rotated, the AWC sensor 410 can use the AWC sensor 410 carried on the calibration wafer 405 to measure the wafer offset again (such as the measured offset 425). That is, the load at a specific point in the system (eg, when the wafer passes through the gate valve 180 at the AWC sensor 410) can be measured based on a reference coordinate system (such as the AWC coordinate system) established during the tool setup. The position of the calibration wafer 405 in and out of the calibration wafer 405, where the reference coordinate system is the loading corresponding to the initial calibration position (such as the indicated position) perfectly aligned with the center (such as the rotation axis) of the base of the wafer to be placed. And carry out the wafer. The difference between measurements (such as offset endpoints in the reference coordinate system) should only be the result of "offset wafer rotation" or the rotation axis rotation of the rotating device. The difference can be expressed by referring to the vector between two measured positions in the coordinate system. Assuming that the rotating device has a negligible radial deviation with respect to its central axis (such as the rotary axis) (such as the central axis of the end effector of the mandrel or the lifting pad of the base 140), the difference in AWC measurement should be the wafer relative Twice the offset of the base, which will be further described in FIGS. 6A to 6B. This definition defines that the processing module changes the indication position required when the wafer is delivered to the center of the susceptor 140 under the processing conditions.

FIG. 4D shows an example of calculating an offset correction vector and / or a condition correction vector in a specific embodiment of the present invention. In particular, the offset correction vectors in the x and y coordinates are based on at least the following measurements: inbound AWC values and outbound AWC values.

FIG. 4E is a flowchart 400E, which shows a method for determining a base offset (temperature-induced offset) in a processing module under processing conditions according to a specific embodiment of the present invention. To determine the temperature-induced offset, the processing module is placed under the same processing conditions used to process the wafer. For example, the processing module is placed under a temperature condition when processing a wafer. The appropriate temperature chosen depends on the process used. The method of the present invention is discussed with reference to specific components of the plasma processing system 100. The flowchart 400E can be implemented in the reference wafer processing system 100 described above.

In 450, the method includes: transferring a wafer to a base of a single or multi-station processing module by a robot, and detecting a shift-in offset value. The wafer may be a calibration wafer used during a calibration procedure. The robot may be a robot in a vacuum conveying module, such as the robot 132. The base can be configured as a rotating device so that the base itself or components of the base can be rotated. The shift-in offset value is measured from a calibrated reference measurement value defined in a reference coordinate system (based on the initial calibration position of the base in the processing module). In particular, the calibration reference measurement defines a perfectly aligned wafer entering the processing module and perfectly aligned at the center of the pedestal. The calibration reference measurement value can be determined when the processing module is not under processing conditions, which will be further described in conjunction with FIG. 5A.

At 455, the method includes rotating the wafer on the pedestal by an angle. In particular, the previously described base assembly may include a base and a lifting pad, wherein the lifting pad is configured to be rotatable relative to the base. For example, a wafer may be placed on a pedestal assembly. The lifting pad can be separated from the base and rotated along or about a rotation axis (such as the axis defining the center of the base), and the lifting pad is at least between a first angle direction and a second angle direction that define an angle Rotate relative to the base.

In 460, the method includes: removing the wafer from the pedestal by a robot, and measuring the offset value. The shift-out offset value is measured from a corrected reference measurement value defined in a reference coordinate system.

In 465, the method includes: using a shift-in offset value and a shift-out offset value to determine an offset value and a direction (such as a vector component) caused by temperature. As mentioned earlier, the differences between measurements (such as offset endpoints in the reference coordinate system) should only be the result of "offset wafer rotation" or offset of the rotation axis of the rotating device. The difference can be expressed by referring to the vector between two measured positions in the coordinate system. In particular, the offset caused by temperature corresponds to the movement or offset of the center of the base of the processing module relative to the initial calibration position (such as the cold indication position) when the processing module is at the processing temperature. From the difference vector, the magnitude of the difference vector is halved to determine the offset (temperature-induced offset) of the center of the base relative to its initial correction position. Specifically, the midpoint of the vector defines the end point of the offset caused by the temperature relative to the calibration reference measurement, which is aligned (or converted) to the initial calibration position of the base. The temperature correction in the center of the base can be determined based on the temperature-induced deviation.

Through detailed description of various modules of the plasma processing system 100 and the plasma processing module 110, the flowcharts 500A to 500C of FIGS. 5A to 5C disclose a measurement calibration reference measurement value, a condition correction amount of the processing module and a manufacturing process Method for loading wafer alignment correction amount. The method 500A and other methods (such as methods 400E, 500B, and 500C) of the present invention are discussed with reference to specific components of the plasma processing system 100, where flowcharts 500A to 500C are implemented in the above-mentioned reference wafer processing system 100 . For example, various sensors and components of the system 100 are used to facilitate the calibration of the TM robot 132 and the measurement of the rotation axis offset of the rotating device in the processing module 110.

In particular, in a specific embodiment of the present invention, flowchart 500A discloses a method for determining a calibration reference measurement value (such as an initialization position) of a calibration wafer, which is held by a transport module (TM) robot and measured by Device measurement, where the position of the correction reference measurement value is aligned with the initial correction position of the rotation axis of the rotation device in the processing module. The flowchart 500A can be implemented in combination with various processes and may include various processes. The various processes described herein are, for example, the processes of the TM robot 132 calibration performed on the vacuum conveying module 190. In particular, the flowchart 500A can be performed to establish a reference coordinate system, which is generally used for aligning and loading a processing wafer, and is also used to measure the offset of the rotation axis of the rotating device in the processing module 110.

Although the flowchart describes the TM robot 132 and the AWC measuring device (such as the AWC sensor 410) for measuring the rotation axis offset, other embodiments are very suitable for using other robots in the plasma processing system 100 of FIG. And other measuring devices. For example, an alignment machine coupled to other robots external to the processing module 110 may be used to determine the measurement value of the wafer. That is, wafer position measurement can be performed at any point within the plasma processing system 100 as long as the robots and / or components of the system 100 have been initially set and calibrated to each other. In this method, the path of the wafer that is transferred through the processing system 100 and finally set at the center point of the pedestal can be known and corrected. Based on this, the center point of the base can be turned into any point on this path and used to establish a reference coordinate system.

In 501, the method includes: indicating an initial calibration position of the TM robot 132 to the base 140. The instruction of the TM robot 132 can be performed during the setting period of the TM robot 132. In particular, the TM robot 132 can be calibrated by instructing the robot 132 to the center of the pedestal 140 of the processing module 110, where the perfectly aligned wafer is located at the center of the pedestal 140 (for example, the center of the wafer is aligned with the base Block Center). In a specific embodiment, the center of the base 140 corresponds to the center axis of the base 140 and the lifting pad. FIG. 6A shows the initial correction position 601 of the base 140, which also corresponds to the rotation axis of the lifting pad. The initial correction position 601 may also correspond to the initial coordinate system 660 (for example, centered on the initial coordinate system 660). The initial coordinate system 660 may be displaced in the entire plasma processing system 100, such as the reference coordinate system 660 ', as described below.

Accordingly, the central axis also corresponds to the rotation axis of the lifting pad, and the lifting pad is configured to rotate the wafer relative to the base 140 and / or the processing module 110. This is usually indicated when conditions are not imposed or imposed on the processing module 110. By way of example, this enables a field technician to perform a setting procedure on, for example, the TM robot 132 and other components of the plasma processing system 100. During the exemplary setting process, a field technician can manually place the end effector of the TM robot 132 at the center of the base 140 to calibrate the TM robot 132.

As mentioned above, once the central axis of the base 140 is determined and the robot is calibrated, a reference coordinate system 601 'can be established at any point on the calibration path, where the wafer will be placed at the calibration center of the TM robot 132 according to the calibration path Or move away from the calibration center of the TM robot 132. That is, the reference coordinate system 601 'is based on the initial correction position of the center of the base.

The determination of the calibration path such as the TM robot 132 will be further described below. In 503, the method includes: placing the calibration wafer on a rotating device (such as a lifting pad, an end effector of a mandrel, etc.) in the processing module 110 or inside the rotating device, and centering on the rotating shaft. In one implementation, the calibration wafer 405 can be placed (eg, hand-held) at the center of the base 140. For example, centering techniques (such as aligning features in the processing module 110 and / or the pedestal 140) may be used to place the alignment wafer. Accordingly, the calibration wafer 405 is assumed to be perfectly aligned with the rotation axis of a rotating device (such as a lifting pad).

In 505, the method includes: using a TM robot 132 to remove the calibration wafer 405 from the processing module 110. The removal step is along the calibration path because the wafer is assumed to be perfectly aligned with the initial calibration position in the center of the pedestal, and when the perfectly aligned wafer and / or the perfectly aligned wafer are removed When the circle is placed in the center of the base 140, the robot system is assumed to follow the same path. For example, FIG. 6A shows a state 409B of the calibration wafer 405, which is centered on an initial correction position 601 of a rotation axis of a rotating device (such as a lifting pad). The perfect alignment calibration wafer 405 is moved from the processing module 110 to the state 409A along the calibration path. This removal procedure is indicated by a double arrow 691, which means a loaded wafer and a loaded wafer perfectly aligned to the initial calibration position 601.

In 507, the method includes: using a measurement device to establish a calibrated reference measurement value for the calibration wafer in a reference coordinate system. For example, the measurement device may be an AWC system including an AWC sensor 410. The calibration reference measurement is aligned with the calibration position of the rotation axis, which corresponds to the rotation device (such as a lifting pad). For illustrative purposes, calibration reference measurements can be obtained at specific locations within the measurement device. For example, the reference measurement value can be measured and calibrated when the calibration wafer (which is aligned with the initial calibration position of the rotation axis) is first aligned with the AWC sensor 410 along the loading path. The calibration wafer can be moved back and forth between the gate valve 180 and the transfer module 190, and it passes a measurement device (such as the AWC sensor 410) to collect the calibration data set. The calibration reference measurement (based on the calibration data set) may be or correspond to the center of the calibration wafer 405. For example, in FIG. 6A, the calibration reference measurement value 601 ′ may correspond to the center 630A of the calibration wafer 405 in the state 409A, which is located at the aforementioned specific position in the measurement device (for example, first along the loading path with the Tester 410 is up). In addition, for illustrative purposes, the reference coordinate system 660 'may correspond to a corrected reference measurement 601' (eg, centered around the corrected reference measurement 601 '), although the reference coordinate system 660' may be centered at any position (as long as The initial correction position relative to the rotation axis and its initial coordinate system 660 may be fixed).

FIG. 5B is a flowchart 500B, which shows a calibration reference measurement value 601 ′ using a calibration wafer 405 in a specific embodiment of the present invention to determine a rotating device (such as the base 140) located in the processing module 110 (under processing conditions). Method of shifting the rotation axis of the lifting pad). FIG. 5B can be described in conjunction with FIG. 6A, where FIG. 6A shows the calibration reference measurement value 601 'of the calibration wafer 405 whose alignment wafer 405 is aligned with the initial rotation axis of a rotating device (such as a lifting pad) in the processing module. Correction position 601. In addition, FIG. 6A shows the influence of the rotation axis offset of the rotating device in the processing module 110 on the calibration wafer 405 when the calibration wafer rotates in a specific embodiment of the present invention. By measuring this effect, the offset of the rotation axis can be determined without using a sensor placed in the processing module 110.

In 510, the method includes: establishing a reference coordinate system 660 'according to the initial correction position 601 of the rotation axis of the rotation device in the processing module. A reference coordinate system 660 'is established in flowchart 500A and is shown in FIG. 6A.

In addition, in 515, the method includes: applying a condition to the processing module 110. This condition may meet the processing conditions imposed on the processing module 110 for performing ALD and / or PECVD processes on the wafer 101. For example, the processing conditions may include a rising temperature of the processing module 110. For example, various processes may be performed at temperatures between 200 and 650 degrees Celsius. In addition, the processing conditions may include other factors such as vacuum pressure and the like. For example, during wafer processing, the processing module 110 may be placed under vacuum and temperature. The processing conditions may affect one or more points in the processing module 110. For example, the processing conditions may move the initial correction position 601 of the rotation axis of the rotating device (such as a lifting pad) by an offset 625. Elements of the processing conditions (alone or combined) may affect the initial correction position 601. For example, the temperature rise of the processing module 110 may cause the center of the base to move, thereby moving the initial correction position 601. In addition, placing the processing module 110 under vacuum pressure may also move the initial calibration position 601. The offset of this initial correction position 601 may be in the order of millimeters or more, which will adversely affect semiconductor processing.

In 520, the method includes using a transfer module (TM) robot 132 configured to transfer the calibration wafer 405 to the processing module 110 to pick up the calibration wafer from the inbound load lock. The alignment wafer need not be perfectly positioned in the TM robot 132 and / or the initial calibration position 601. That is, the specific embodiment of the present invention can use the calibration wafer 405 (which is picked up vertically by the robot 132 and may be misaligned with the reference measurement value 601 ') to measure the offset of the rotation axis and measure the calibration crystal on the loading path The position of the circle 405 (without correction of misalignment), the calibration wafer in the processing module is rotated, and the position of the calibration wafer 405 on the load path is measured.

More specifically, in 525, the method includes: when the calibration wafer is transferred to the processing module, using a measurement device to determine a first measurement value of the calibration wafer 405 in the reference coordinate system. The measuring device can be fixed in the reference coordinate system 660 '. For example, when the calibration wafer is loaded into the processing module 110 through the gate valve 180, the AWC sensor 410 can be used to measure the first measurement value. The first measurement value can be measured relative to the reference coordinate system 660 '(for example, the center of the measured calibration wafer 405 is defined). Although the first measurement value may indicate that the calibration wafer 405 is not aligned with the initial calibration position 601 and / or the calibration reference measurement value 601 ', it is not necessary to correct the misalignment when measuring the rotation axis deviation of the rotating device. Misalignment is corrected even during normal wafer processing.

In 530, the method includes: delivering the calibration wafer to a processing module. This may include: delivering the calibration wafer from one or more robots and / or components within the processing module 110 before reaching its final destination (rotating device). In addition, the method includes: placing the calibration wafer 405 in a rotating device. For example, the attaching step may include placing the calibration wafer 405 on the lifting pad or the base 140. In another example, the placing step may include: using a mandrel or a rotating device 220 (configured to transfer wafers from one processing station in the multi-station processing module 110 to another processing station) The actuator takes up the calibration wafer 405, wherein the end effector is configured to rotate the wafer. Other devices may be considered to connect the calibration wafer to the rotating device.

In 535, the method includes: rotating the calibration wafer 405 by an angle using a rotating device. For example, the rotating device may be a lifting pad, which is configured to rotate a wafer placed on the wafer relative to the base 140 and / or the processing module 110. In a specific embodiment, the generated rotation angle can be in the loading orientation of the calibration wafer 405 (corresponding to the loading path when placed on or in a rotating device) and the loading orientation of the calibration wafer (corresponding to The load path when removing the rotating device is effectively greater than 0 degrees to less than or equal to 180 degrees (such as clockwise or counterclockwise).

For example, when the rotating device is a lifting pad, the method may include placing the calibration wafer 405 on the lifting pad of the rotating device, and the rotating device is configured to deposit a film on the processing wafer. The rotating device includes a base and a lifting pad assembly, wherein the base has a top surface of the base extending from a central axis of the base. The central axis may also correspond to the rotation axis of the lifting pad. The lifting pad is configured to be placed on the top surface of the base, connected to the top surface of the base, and / or separated from the top surface of the base. The method may include separating the lifting pad from a top surface of the base along a central axis. The method may include rotating the lifting pad relative to the top surface of the base between at least a first angular position and a second angular position that define an angle.

In another example, when the rotating device is an end effector of the mandrel or the rotating device 220, the method may include: using an end effector (not shown) of a mandrel robot (such as the rotating device 220), from multiple stations The first station of the processing module 110 picks up the calibration wafer. The mandrel robot is configured to transfer wafers between processing stations in the processing module 110, and the end effector is configured to rotate the wafer. In addition, the method includes: placing the calibration wafer on a first station for removal from the processing module after rotation.

In 540, the method may include: using the TM robot 132 to remove the calibration wafer 405 from the processing module. In this method, the measurement of the calibration wafer 405 can be performed outside the processing module 110. Specifically, in 545, the method includes: when the calibration wafer is transferred to the outbound load lock, using a measurement device to determine a second measurement value of the calibration wafer 405 in the reference coordinate system 660 '. For example, when the calibration wafer is removed from the processing module 110 through the gate valve 180, the second measurement value may be measured using the AWC sensor 410. The second measurement value can be measured relative to the reference coordinate system 660 '(for example, defining the measured calibration wafer 405 center).

For example, FIG. 6A shows the path of the calibration wafer 405 when the rotation axis offset 625 is measured. In order to introduce and easily explain the steps for determining the offset 625, the loaded calibration wafer 405 is perfectly aligned with the initial correction position 601 of the rotation axis (for example, the center of the pedestal 140 at the time of setting). Of course, loading the calibration wafer 405 does not need to be perfectly aligned. As shown in the diagram and description of FIG. 6B, according to this, regardless of whether the loading calibration wafer 405 is aligned, the offset 625 can still be determined through measurement and rotation. As shown, state 409A shows the alignment wafer 405 along the loading path, which is perfectly aligned with the initial calibration position 601. The first measurement value corresponds to and / or is transferred to the measurement center 630A of the calibration wafer 405 (which also corresponds to the calibration reference measurement value 601 'when perfectly aligned). After measuring the first measurement value of the calibration wafer 405, the TM robot 132 transfers the calibration wafer 405 to the processing module, as shown by arrow 691. The state 409B of the calibration wafer 405 shows that the calibration wafer 405 is transferred to a processing station or pedestal 140 that includes a rotating device such as a lifting pad. Because the calibration wafer 405 is perfectly aligned, the center of the calibration wafer 405 is placed at the initial calibration position 601, which also corresponds to the rotation axis of the rotating device (under cold temperature and atmosphere) during the set period. Because the processing module 110 is under processing conditions, the rotation axis will move or shift from the original position. As shown, the rotation axis 650 is offset from the initial correction position 601. For example, the entire base and its central axis have been moved by an offset 625 relative to the reference coordinate system 660 ', and the measurement device is fixed to the reference coordinate system 660' and outside the processing module 110. Accordingly, the calibration wafer 405 is not located at the center of the susceptor. The state 409C of the calibration wafer 405 indicates that the calibration wafer 405 is rotated by an angle (such as 180 degrees). After rotation, the center 630B of the calibration wafer 405 moves along the line 693. Before the rotation, the notch 406 is at the top of the calibration wafer 405, and after the rotation, the notch is at the bottom of the calibration wafer 405, as shown in FIG. 6A. The calibration wafer 405 before rotation is indicated by a dotted line, and the calibration wafer 405 after rotation is indicated by a thick solid line. State 409D shows the calibration wafer 405 along the load path when removed from the processing module 110. Due to the rotation, the loading path is no longer perfectly aligned with the initial correction position 601. The second measurement value is measured, and the second measurement value may correspond to and / or be transferred to the measurement center 630D of the calibration wafer 405.

At 550, the method includes determining a condition correction amount of the rotation axis based on the first measurement value and the second measurement value. The condition correction amount corresponds to an offset 625 of the rotation axis 650 from the initial correction position 601 when the processing module is under processing conditions. That is, the offset 625 is caused by processing conditions. FIG. 6A shows the offset 625 represented by a vector, which is determined by the first and second measurement values (such as the measured center 630A loaded on the calibration wafer 405 and the measured center 630D carried out on the calibration wafer 405). . In particular, the difference vector 620A between the first measurement value and the second measurement value can be determined to perform the condition correction. That is, the difference vector intersects the measured positions of the centers 630A and 630D of the loading and unloading calibration wafer 405. Accordingly, the difference vector is changed according to the alignment of the loaded calibration wafer 405. The difference vector 620A is also shown as the displacement between the lines 621 and 623. As shown by the rotation line 693, the lines 621 and 623 are perpendicular to the difference vector 620A and correspond to the calibration wafer 405 in the pre-rotation state and the post-rotation state. Centers (such as center 630B before rotation and center 630C after rotation) intersect.

In addition, the offset of the rotation axis from its initial correction position 601 is determined by halving the magnitude of the difference vector 620A to determine the endpoint of the offset vector 625. In particular, a difference vector (such as 620A) may be placed between the measured center (such as 630A and 630D) of the loading and unloading wafer 405 in the reference coordinate system 660 'to determine Offset vector 625. The half of the difference vector (such as halving the magnitude) refers to the endpoints of the offset vector 625, where the starting point of the offset vector 625 corresponds to the corrected reference measurement 601 '. In FIG. 6A, since the calibration wafer is perfectly aligned, the offset vector 625 is located on the difference vector 620A. However, when the loading calibration wafer 405 is misaligned, the offset vector 625 will not be located (eg, with the same direction) on its corresponding difference vector, as shown in FIG. 6B.

As mentioned earlier, the determination of the offset vector 625 does not depend on the perfect alignment of the calibration wafer 405 loaded. FIG. 6B is a diagram showing the rotation axis deviation of the rotation device in the measurement processing module according to a specific embodiment of the present invention, which is measured by rotating the loading wafer by an angle by the rotation device, wherein the measurement is alignment Unknown theory (alignment agnostic). As shown, four differently configured wafers 405 are shown along four different loading paths (such as a horizontal path perpendicular to the X-axis of the reference coordinate system 660 '). The X axis of the reference coordinate system 660 'can be regarded as perfectly aligned with the initial correction position 601 along the perfect alignment path. In particular, the configuration wafer 405A (also shown in FIG. 6A) is perfectly aligned with the initial correction position 601. That is, the center 630A of the configuration wafer 405A determined from the first measurement value is perfectly aligned with the corrected reference measurement value 601 'of the reference coordinate system 660'. However, the wafer 405B is configured to be misaligned from the correction reference measurement value 601 ', as shown by the misalignment of the center of the wafer 405B (measured by the first measurement value). In addition, the wafer 405C is configured to be misaligned from the correction reference measurement value 601 ', as shown by the misalignment of the center of the wafer 405C (measured by the first measurement value). The configuration wafer 405D is also misaligned from the corrected reference measurement 601 ', as shown by the misalignment of the center of the wafer 405D (measured by the first measurement).

Each of the first and second measurement value groups of the wafers 405A to 405D is configured in FIG. 6B to define a difference vector in the reference coordinate system 660 '. For example, for the configuration wafer 405A, the first and second measurement values define a difference vector 620A previously mentioned in FIG. 6A. Similarly, the difference vector 620B is defined based on the first and second measurements of the configuration wafer 405B, the difference vector 620C is defined based on the first and second measurements of the configuration wafer 405C, and the difference vector 620D is based on the configuration crystal The first and second measurements of circle 405D are defined. All the difference vectors 620A to 620D intersect at the endpoint of the offset vector 625 at point 650 ', which may be the displacement of the rotation axis 650, that is, the offset caused by the processing conditions. That is, for each difference vector starting from the respective first measurement value corresponding to the loaded calibration wafer, halving the magnitude also defines the endpoint of the offset vector 625. The starting point of the offset vector 625 is defined by the corrected reference measurement 601 '.

For illustrative purposes, any loaded wafer at any point on the calibration path (which is aligned with the initial calibration position 601) can be corrected by a condition correction amount corresponding to the offset vector 625. For example, in FIG. 6A, the calibration wafer 405 (perfectly aligned with the initial correction position 601) in the state 409A will not be aligned with the moved rotation axis 650 (its factor The processing conditions applied to the processing module 110 are shifted) and aligned. As such, the loaded calibration wafer is now aligned at point 650 ', which is aligned with the rotation axis 650 in the processing module 110. For a loaded wafer that is not aligned with the reference calibration measurement value 601 'and the corresponding initial calibration position 601, an alignment correction amount is also applied so that the wafer is completely aligned with the rotation axis of the rotating device, as shown in FIG. 5C.

The formula for measuring the conditional deviation and its correction will be discussed below. The variable input values are as follows: X ₁ Y ₁ = AWC measured offset # 1 (1) X ₂ Y ₂ = AWC measured offset # 2 (2)

The intermediate variables are as follows: ΔX _P , ΔY _P = base offset change (with 180-degree rotation) (3)

The expected output values are as follows: X _P1 , Y _P1 = Offset # 1 of the base (4) X _P2 , Y _P2 = Offset # 2 of the base (5) X _C , Y _C = Robot automatic correction correction vector (6)

Coordinate rotation matrix, 180 degrees (offset wafer rotating on the base) is as follows: X _P2 , = X _P1 * cos (θ)-Y _P1 * sin (θ) (7) Y _P2 , = X _P1 * sin (θ)-Y _P1 * cos (θ) (8)

When the rotation angle (θ) is 180 degrees, the value is determined as follows: X _P2 = -X _P1 (9) Y _P2 = -Y _P1 (10)

Therefore, the following formula is defined as follows: ΔX _P = X _P2 -X _P1 = -X _P1 -X _P1 =-2X _P1 (11) ΔY _P = Y _P2 -Y _P1 = -Y _P1 -Y _P1 =-2Y _P1 ( 12)

The AWC measurement reflects the change in base offset as follows: ΔX _P = X ₂ -X ₁ = 2X _P1 (13) ΔY _P = Y ₂ -Y ₁ = 2Y _P1 (14) X _P1 = (1/2) (X ₂ -X ₁ ) (15) Y _P1 = (1/2) (Y ₂ -Y ₁ ) (16)

The required robot auto-correction correction vector is opposite to the offset direction, as defined below: X _C = -X _P1 = (1/2) (X ₁ -X ₂ ) (17) Y _C = -Y _P1 = (1 / 2) (Y ₁ -Y ₂ ) (18)

An example of calculating an offset correction vector and / or a conditional correction vector is shown in FIG. 4D.

FIG. 5C is a flowchart 500C, which shows a method of a specific embodiment of the present invention, which determines a registration offset of a loaded processing wafer from a calibration reference measurement value, and applies the load processing wafer according to the registration offset. An alignment correction amount, and a condition correction amount is applied to the loaded processing wafer according to the rotation axis deviation of the rotating device in the processing module. The flowchart 500C is performed during wafer processing, and is performed after the TM robot 132 corrects (as described in FIG. 5A) and measures the rotation axis offset of the rotating device (as described in FIG. 5B).

In 561, the method includes: setting conditions of a processing module for processing a wafer. A reference coordinate system has been previously established that is based on an initial correction position of a rotating device within a processing module (eg, as described with respect to FIG. 5A and FIG. 5B-510). In addition, a measurement device fixed in the reference coordinate system is also used to establish a corrected reference measurement value (such as measurement 601 'of the calibration wafer 405) in the reference coordinate system 660, as described previously in FIG. 5A. The calibration reference measurement 601 'is aligned with the initial calibration position 601, as described above.

At 565, the method includes using a TM robot to pick up the processing wafer 101 from the inbound load lock 170. The processing wafer is not the calibration wafer 405 in the specific embodiment, but a wafer designated for semiconductor device and / or integrated circuit processing of the semiconductor device.

In 570, the method includes: when the processing wafer 101 is transferred to the processing module 110, using a measuring device, the alignment measurement value of the processing wafer is determined in the reference coordinate system 660 '. That is, the processing wafer picked up by the TM robot 132 may not be perfectly aligned at a position centered on the initial calibration position 601, which corresponds to the center of the base and the rotation device (such as a lifting pad). Axis of rotation. This alignment measurement value is used to determine the alignment offset loaded on the processing wafer 101, as measured using a measurement device (such as the AWC sensor 410) relative to the calibration reference measurement value 601 '.

For example, FIG. 7 shows an alignment offset (offset from the correction reference measurement value 601 ') of the processing wafer 101 loaded in a specific embodiment of the present invention. As shown in the figure, the calibration reference measurement value 601 ′ of the perfectly aligned calibration wafer 405 (measured by a measurement device in the reference coordinate system 660 ′ and outside the processing module 110) is aligned with the base 140. The initial correction position 601 and / or the rotation axis of the rotating device. In addition, the processing wafer 101 is shown as being offset from the reference correction measurement value 601 'by a registration offset 725 (such as a registration offset vector). Specifically, the first measurement value (alignment measurement value) of the processing wafer 101 is determined by a measurement device 610 fixed in the reference coordinate system 660 '. The alignment measurement value may be the center 720 of the processing wafer 101 or transferred to the center 720 of the processing wafer 101. As shown in the figure, the center 720 is offset by a registration offset 725 (which can be represented by a vector) and a deviation correction reference measurement value 601 '.

In 575, the method includes: obtaining an alignment correction amount of the processing wafer according to the alignment measurement value, which corresponds to the offset of the processing wafer from the correction reference measurement value. In a specific embodiment, the alignment correction amount may be an alignment offset vector 725.

In addition, the condition correction amount of the rotation axis can be obtained in 576. The condition correction amount corresponds to the deviation of the rotation axis from the initial correction position 601 when the processing module is under processing conditions. In particular, the offset of the rotation axis is measured before the processing, using a rotation device in the processing module under the processing conditions, based on the calibration wafer 405 being rotated by an angle around the rotation axis 650. This condition correction amount has been described previously in FIG. 5B.

In addition, in 580, the method includes: applying a condition correction amount and an alignment correction amount to the loaded wafer 101, so that the wafer is aligned with the correction reference measurement value 601 'and the initial correction of the rotation axis of the corresponding rotation device. Position 601, as previously described. The TM robot 132 can be used to apply alignment and condition correction amounts to the processing wafer. Once the condition correction amount and the alignment correction amount are applied, when the processing wafer 101 is placed in the processing module 110 for the processing of 590, the loaded wafer 101 can be aligned. That is, the loaded wafer 101 is now aligned with the rotation of the rotating device disposed within the processing module 110 (under processing conditions) that is offset from the initial calibration position 601 (such as the center of the processing station and / or the base 140). axis.

FIG. 8 shows a control module 800 for controlling the above system. For example, the control module 800 may include a processor, a memory, and one or more interfaces. The control module 800 may be used to control a device of the system according to the sensed value. For illustration only, the control module 800 may control one or more valves 802, filter heaters 804, pumps 806, and other devices 808 according to the sensed values and other control parameters. The control module 800 receives the sensed values from a pressure gauge 810, a flow meter 812, a temperature sensor 814, and / or other sensors 816, which are merely examples. The control module 800 can also be used to control processing conditions during the precursor transport and thin film deposition process. The control module 800 generally includes one or more memories and one or more processors.

The control module 800 can be used to control the operation of the precursor conveying system and the deposition instrument. The control module 800 executes a computer program including a plurality of array instructions, which are used to control the processing sequence, the temperature of the conveying system, the pressure difference between different filters, the valve position, the gas mixture, the chamber pressure, the chamber temperature, and the substrate temperature. , RF power level, command set for substrate sucker or base position, and other parameters for specific processing. The control module 800 can also monitor the pressure difference and automatically switch the delivery of the gas-phase precursor from one or more paths to one or more other paths. In some embodiments, other computer programs stored on the memory device associated with the control module 800 may also be used.

There is usually a user interface associated with the control module 800. The user interface may include a display 818 (such as a graphical software display that displays a screen and / or equipment and / or processing conditions), and a user input device 820, such as a pointing device, a keyboard, a touchpad, and a microphone Wait.

Computer programs used to control precursor transport, deposition, and other processes in the processing sequence can be written in any conventional computer-readable programming language: for example, combined language, C, C ++, Pascal, Fortran, or others. The compiled object code or instruction file is executed by the processor to perform the tasks identified in the program.

The control module parameters are related to the processing conditions, such as the pressure difference of the filter, the composition and flow rate of the processing gas, temperature, pressure, plasma conditions (such as RF power level and low frequency RF frequency), the pressure of the cooling gas, and the cavity. The temperature of the chamber wall.

The system software can be designed or configured in many different ways. For example, subroutines or control objects of various chamber components can be written to control the operation of the chamber components, which operations are necessary to implement the inventive deposition process of the present invention. Examples of the program or part of the program used for this purpose include: substrate positioning instruction code, processing gas control instruction code, pressure control instruction code, heater control instruction code, and plasma control instruction code.

A positioning program for a substrate may include program instruction codes for controlling chamber components, using the chamber components to load the substrate onto a base or chuck, and controlling the substrate and other parts of the chamber (such as a gas inlet and / or Target). The process gas control program may include instruction codes for controlling gas composition and flow rate, and optionally for flowing gas into the chamber before deposition to stabilize the pressure in the chamber. The monitor of the filter includes a command code for comparing the measured differential pressure with a predetermined magnitude, and / or a command code for switching paths. The pressure control program may include a command code to control the pressure in the chamber by adjusting a throttle valve in the exhaust system of the chamber, for example. The heater control program may include instruction codes for controlling the current to the heating unit to heat the components in the precursor conveying system, the substrate, and / or other parts of the system. Alternatively, the heater control program may control the transfer of a thermally conductive gas (such as helium) to the wafer chuck.

Examples of sensors that can be monitored during deposition include, but are not limited to, mass flow controllers, pressure sensors (such as pressure gauge 810), and thermocouples, bases, or chucks (such as temperature) located in the delivery system Sensor 814/220). Appropriate stylized feedback and control algorithms can be used with data from these sensors to maintain ideal processing conditions. The foregoing describes the implementation of embodiments of the present invention in a semiconductor processing tool having a single or multiple chambers.

In some embodiments, the controller is part of the system, which may be part of the above embodiments. Such systems may include semiconductor processing equipment that includes a processing tool or tools, a chamber or multiple chambers, a processing platform or platforms, and / or specific processing components (bases, airflow systems, etc.) . These systems can be combined with electronic equipment to control semiconductor wafer or substrate operations before, during, and after processing. These electronic devices may be referred to as "controllers", which may control various components or sub-components of the system or plural systems. The controller, which depends on the processing needs and / or system type, can be programmed to control any process disclosed herein, including the transfer of processing gas, temperature settings (such as heating and / or cooling), pressure settings, vacuum settings, power settings , Radio frequency (RF) generator settings, radio frequency matching circuit settings, frequency settings, flow settings, fluid transfer settings, position and operation settings, wafer transfer (in and out of tools or other transfer tools that are connected or connected to specific systems, and / Or loading room).

Broadly speaking, a controller can be defined as an electronic device with various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, starting cleaning operations, starting endpoint measurements, and the like. . The integrated circuit may include: a chip in the form of firmware storing program instructions, a digital signal processor (DSP, digital signal processor), a chip defined as an application specific integrated circuit (ASIC), and / or a chip Or more microprocessors, or microcontrollers that execute program instructions (eg, software). Program instructions can be instructions sent to the controller or system in the form of different individual settings (or program files), which are implemented (on semiconductor wafers, or for semiconductor wafers, or System) specific process and define operating parameters. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to achieve one or more processing steps during manufacturing of one or more of the following: layer, material, metal, oxide, silicon, Dies of silicon dioxide, surfaces, circuits, and / or wafers.

In some embodiments, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, connected to the system by other networks, or a combination thereof. For example, the controller may be in all or part of a "cloud" or factory host computer system that allows remote access to wafer processing. The computer enables the system to be remotely accessed to monitor the current progress of manufacturing operations, check the history of past manufacturing operations, and check the trend or performance measurement of multiple manufacturing operations to change the parameters of current processing and set the current processing Process steps, or start a new process. In some embodiments, a remote computer (eg, a server) can provide process recipes to the system through a network, which may include a local area network or the Internet.

The remote computer may include a user interface capable of parameter and / or setting input or programming, and then the parameters and / or settings may be transmitted from the remote computer to the system. In some embodiments, the controller receives a data form instruction that specifies parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool with which the controller engages or controls. Thus, as described above, the controllers can be decentralized, for example by including one or more separate controllers that are networked together and that operate toward a common purpose (eg, the processes and controls described herein). . An example of a decentralized controller for this purpose is one or more on a chamber that communicates with one or more integrated circuits located remotely (eg, at the level of a platform, or as part of a remote computer) Integrated circuit, the two are combined to control the process on the chamber.

An exemplary system may include, but is not limited to, a plasma etching chamber or module, a deposition chamber or module, a spin cleaning chamber or module, a metal plating chamber or module, a cleaning chamber or module, a diagonal Corner etch chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer Etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing that can be associated with or used in the manufacture and / or processing of semiconductor wafers system.

As mentioned above, depending on the process steps or multiple steps to be performed by the tool, the controller can communicate with one or more of the following in a semiconductor manufacturing plant: other tool circuits or modules, other tool components, cluster tools , Other tool interfaces, adjacent tools, adjacent tools, tools distributed throughout the factory, host computer, another controller, or tools used in material transfer, the tools used in the material transfer carry wafer containers to and from the tool Location and / or loading port.

The foregoing description of specific embodiments has been provided for the purpose of illustration and description, and is not intended to exhaustively detail or limit the invention. Individual elements or features of a specific embodiment are generally not limited to this specific embodiment, but even if not specifically shown or described, they are interchangeable and applicable to selected specific embodiments where applicable. This can also be changed in various ways. Such changes are not to be regarded as a departure from the invention, and all such modifications are also included within the scope of the invention.

Although the foregoing specific embodiments have been described in detail for clarity of understanding, it is apparent that certain changes and modifications can still be implemented within the scope of the accompanying patent application. Therefore, the specific embodiments should be regarded as illustrative rather than restrictive, and the specific embodiments are not limited to the details shown here, but can be modified within the scope of the accompanying patent application and its equivalent scope.

100‧‧‧ Wafer processing system, plasma processing system

101‧‧‧ wafer

102b‧‧‧Processing chamber

110‧‧‧Processing Module

131‧‧‧Conveying robot

140‧‧‧ base, processing station

150‧‧‧Equipment front-end module

132‧‧‧Conveying module robot

133, 152‧‧‧ track

160‧‧‧ Loading port

170‧‧‧Load lock

180‧‧‧Gate Valve

190‧‧‧conveying module

200‧‧‧ ring

220‧‧‧ rotating mechanism

226‧‧‧Cross Fork 226

302‧‧‧Inbound Load Lock

304‧‧‧Outbound Load Lock

308‧‧‧box

310‧‧‧ Atmospheric Port

316‧‧‧ chamber transfer port

405‧‧‧Cal Wafer

406‧‧‧notch

409A, 409B, 409C, 409D‧‧‧State

410‧‧‧ Wafer Automatic Centering Sensor

420‧‧‧offset

601‧‧‧ initial correction position

601’‧‧‧ Calibration reference measurement value, reference coordinate system

610‧‧‧ measuring device

620A, 620B, 620C, 620D‧‧‧Difference vectors

Line 621, 623‧‧‧‧

625, 725‧‧‧offset vectors

630A, 630B, 630C, 630D, 720‧‧‧ Center

650‧‧‧rotation axis

650’‧‧‧ points

660‧‧‧ Initial coordinate system

660’‧‧‧ Reference coordinate system

691‧‧‧double arrow

693‧‧‧Rotating line

A, B, C, D‧‧‧ wafers

800‧‧‧control module

802‧‧‧ Valve

804‧‧‧Filter heater

806‧‧‧Pu

808‧‧‧Other devices

810‧‧‧Pressure gauge

812‧‧‧Flowmeter

814‧‧‧Temperature sensor

816‧‧‧Other sensors

818‧‧‧Display

820‧‧‧input device

The embodiments are best understood with reference to the following description and accompanying drawings.

FIG. 1 is a substrate processing system for processing a wafer, for example, forming a film on the wafer.

FIG. 2 is a top view of a multi-station processing tool and / or processing module according to a specific embodiment, in which four processing stations are provided.

FIG. 3 is a schematic diagram of an exemplary multi-site processing tool according to a specific embodiment, which has an inbound load lock and an outbound load lock.

FIG. 4A shows a loaded wafer according to a specific embodiment of the present invention, which is loaded into a multi-station processing module, and shows the orientation of the loaded wafer to determine the deviation of the rotation axis of the device in the processing module under processing conditions shift.

FIG. 4B shows a carried-out wafer according to a specific embodiment of the present invention, which is output from the multi-station processing module described in FIG. 4A, and shows the orientation of the carried-out wafer for measuring the inside of the processing module under processing conditions. Offset of device rotation axis.

FIG. 4C shows a procedure for determining an offset in a specific embodiment of the present invention, which uses measured values of a loaded wafer and an unloaded wafer to measure the offset of a rotation axis of a rotating device in a processing module under processing conditions.

FIG. 4D shows an example of calculating an offset correction vector in a specific embodiment of the present invention.

FIG. 4E is a flowchart showing a method of a specific embodiment of the present invention, which measures the temperature-induced shift of the base in the processing module under processing conditions.

FIG. 5A is a flowchart showing a method of a specific embodiment of the present invention, which determines a calibration reference measurement value (such as an initialization position) of a calibration wafer, which is held by a transport module (TM) robot and measured by a measurement Device measurement, where the position of the correction reference measurement value is aligned with the initial correction position of the rotation axis of the rotation device in the processing module.

5B is a flowchart showing a method of a specific embodiment of the present invention, which uses a calibration reference measurement value of a calibration wafer to determine a rotation axis offset of a rotating device located in a processing module (under processing conditions). .

FIG. 5C is a flowchart showing a method according to a specific embodiment of the present invention, which determines a registration offset of a load processing wafer offset correction reference measurement value, and applies the load processing wafer to the load processing wafer according to the registration offset. An alignment correction amount, and a condition correction amount is applied to the loaded processing wafer according to the rotation axis deviation of the rotating device in the processing module.

FIG. 6A shows a calibration reference measurement value of a calibration wafer according to a specific embodiment of the present invention. The calibration reference measurement value is aligned with an initial position of a rotation axis of a rotating device in a processing module, and shows that the processing mold is calibrated when the calibration wafer is rotated. The influence of the rotation axis deviation of the rotating device in the group on the calibration wafer.

FIG. 6B shows a rotation axis offset measurement of a specific example of the present invention, which uses a rotating device to rotate the loaded wafer by an angle to measure the offset of the rotation axis of the rotation device in the processing module. Unknown.

FIG. 7 shows an alignment offset of a processing wafer loaded in a specific embodiment of the present invention, and its offset correction reference measurement value.

FIG. 8 shows a control module for controlling the above system.

Claims (25)

A method for measuring the temperature-induced shift of the processing module's pedestal under the temperature conditions of the process, including: 传送 A robot transfers a wafer to the processing module's pedestal, and detects a move-in An offset value; rotating the wafer on the pedestal by an angle; 移 removing the wafer from the pedestal by the robot, and measuring an out-of-offset value; and using the in-offset value and the Remove the offset value and determine the magnitude and direction of the offset caused by the temperature. The method as described in item 1 of the scope of patent application, further comprising: defining a calibration reference measurement value in a reference coordinate system according to an initial calibration position of the base in the processing module, where the shift into the bias The shift value is measured from the correction reference measurement value, and wherein the shift-out offset value is measured from the correction reference measurement value. The method according to item 2 of the scope of patent application, further comprising: wherein the step of detecting the shift-in offset value comprises: using a measuring device fixed in the reference coordinate system to determine the value in the reference coordinate system One of the wafers has a first measurement value; and the step of detecting the shift-out offset value includes using the measurement device to determine a second measurement value of the wafer in the reference coordinate system. The method according to item 2 of the scope of patent application, further comprising: when no condition is applied to the processing module, the robot is calibrated to an initial calibration position corresponding to the center of the base, the reference coordinate system is According to the initial calibration position; placing a calibration wafer at the center of the pedestal; using the robot to remove the calibration wafer from the pedestal; and using a measurement device fixed in the reference coordinate system, The calibration reference measurement value of the calibration wafer is defined in the reference coordinate system, and the calibration reference measurement value is aligned with the initial calibration position. The method according to item 2 of the scope of patent application, further comprising: 测定 determining a temperature correction amount of the center of the base according to the offset caused by the temperature, the offset caused by the temperature corresponding to when the processing mold When set at the temperature, the center of the base deviates from the initial correction position by the offset. The method according to item 5 of the scope of patent application, wherein the step of determining the temperature correction amount comprises: determining a difference vector between the shift-in offset value and the shift-out offset value; and the amount of the difference vector The value is halved to determine the offset caused by the temperature at which the center of the base deviates from the initial correction position, wherein the offset caused by the temperature corresponds to the temperature correction amount. The method according to item 1 of the scope of patent application, wherein the step of rotating the wafer includes: 放置 placing the wafer on a lifting pad configured to be separated from the base and opposite Rotate on the base; 分开 separate the lifting pad from the base along a rotation axis; and make the lifting pad between at least a first angle direction and a second angle direction defining the angle, and Rotate on the base. A calibration method includes: 建立 establishing a reference coordinate system based on an initial calibration position of a rotation axis of a rotating device in a processing module; applying a condition to the processing module; using a transport module (TM) robot, Picking up a calibration wafer from an inbound load lock, the transfer module (TM) robot is configured to transfer the calibration wafer to the processing module; when the calibration wafer is transferred to the processing module During assembly, a measurement device is used to determine a first measurement value of the calibration wafer in the reference coordinate system, and the measurement device is fixed in the reference coordinate system; 交 The calibration wafer is delivered to the processing module Connect the calibration wafer to the rotation device; Use the rotation device to rotate the calibration wafer by an angle; Use the TM robot to move the calibration wafer out of the processing module; When the calibration wafer is transported To an outbound load lock Using the measuring device to measure a second measurement value of the calibration wafer in the reference coordinate system; and determining a condition correction amount of the rotation axis and the condition correction amount according to the first measurement value and the second measurement value It corresponds to the deviation of the rotation axis from the initial correction position when the processing module is under the condition. The method as described in item 8 of the scope of patent application, wherein the step of determining the condition correction amount includes: determining a difference vector between the first measurement value and the second measurement value; and the amount of the difference vector The value is halved to determine the offset of the rotation axis from the initial correction position, where the offset corresponds to the condition correction amount. The method as described in claim 8 of the patent application scope, wherein the step of applying a condition includes performing at least one of the following operations: bringing the processing module at a processing temperature; and applying a vacuum to the processing module . The method according to item 8 of the scope of patent application, wherein the step of establishing a reference coordinate system includes: when no condition is applied to the processing module, calibrating the TM robot to the initial correction position, the reference coordinate system Based on the initial calibration position; 放置 placing the calibration wafer in the rotation device, centered on the rotation axis; using the TM robot to move the calibration wafer out of the processing module; and using the measurement device, in A calibration reference measurement value for the calibration wafer is established in the reference coordinate system, and the calibration reference measurement value is aligned with the initial calibration position of the rotation axis. The method according to item 8 of the scope of patent application, wherein the step of rotating the calibration wafer by an angle includes: placing the calibration wafer on a lifting pad of the rotating device, the rotating device being configured to be used To deposit a film on a processing wafer, the rotary device is connected to a base, the base has a top surface of the base extending from a central axis of the base, and the lifting pad is configured to be used for Placed on the top surface of the base or separated from the top surface of the base; along the central axis, the lifting pad is separated from the top surface of the base; and the lifting pad is at least one first defining the angle Between an angular direction and a second angular direction, it is rotated relative to the top surface of the base. The method according to item 12 of the patent application range, wherein the angle ranges from greater than 0 degrees to less than or equal to 180 degrees. The method according to item 12 of the application, wherein a diameter of one of the lifting pads is close to a wafer diameter. The method according to item 12 of the application, wherein a diameter of one of the lifting pads is smaller than a wafer diameter. The method according to item 8 of the scope of patent application, wherein the step of rotating the calibration wafer by an angle includes: using an end effector of a spindle robot to remove the calibration wafer from one of the processing modules Taken at the first station, the mandrel robot is configured to transfer wafers between processing stations in the processing module, wherein the end effector is configured to rotate the wafer; and the rotated The calibration wafer is placed on the first station to be removed from the processing module. A calibration method includes: establishing a reference coordinate system based on an initial calibration position of a rotation axis of a rotating device in a processing module; when using a transport module (TM) robot to calibrate a calibration wafer from the initial calibration When the position is moved out of the processing module, a measurement device fixed in the reference coordinate system is used to establish a calibration reference measurement value of the calibration wafer in the reference coordinate system, and the calibration wafer is placed with the rotation axis As the center, the calibration reference measurement value is aligned with the initial calibration position of the rotation axis; according to the calibration wafer, the rotation device in the processing module is used to rotate an angle around the rotation axis to determine one of the rotation axes Condition correction amount, which corresponds to an offset of the rotation axis from the initial correction position when the processing module is under a condition; using the TM robot to load a processing wafer from an inbound load Lock up; when processing the wafer When sent to the processing module, the measurement device is used to determine an alignment measurement value of the processing wafer in the reference coordinate system; according to the alignment measurement value, an alignment correction amount of the processing wafer is determined, The alignment correction amount corresponds to an offset of the processing wafer from one of the correction reference measurement values; using the TM robot, applying the condition correction amount to the processing wafer; and using the TM robot, applying the pair The correction amount is adjusted to align the processing wafer with the rotation axis that is offset from the initial correction position. The method according to item 17 of the scope of patent application, further comprising: delivering the processing wafer to the processing module for processing. The method according to item 17 of the scope of patent application, wherein the step of determining a reference calibration measurement value comprises: when no condition is applied to the processing module, calibrating the TM robot to the initial calibration position, the reference coordinate The system is based on the initial calibration position; the calibration wafer is placed in the rotation device with the rotation axis as the center; the TM robot is used to move the calibration wafer out of the processing module; and using the measurement device, A calibration reference measurement value of the calibration wafer is established in the reference coordinate system, and the calibration reference measurement value is aligned with the initial calibration position of the rotation axis. The method according to item 17 of the scope of patent application, wherein the step of determining a calibration reference measurement value includes: applying a condition to the processing module; using a transfer module (TM) robot to move a calibration wafer from Picked up by an inbound load lock, the transfer module (TM) robot is configured to transfer the calibration wafer to the processing module; when the calibration wafer is transferred to the processing module, a measurement is used A device for measuring a first measurement value of the calibration wafer in the reference coordinate system, the measurement device is fixed in the reference coordinate system; delivering the calibration wafer to the processing module; and calibrating the calibration wafer Connected to the rotating device; using the rotating device to rotate the calibration wafer by an angle; using the TM robot to move the calibration wafer out of the processing module; when the calibration wafer is transported to an outbound station When the load is locked, a second measurement value of the calibration wafer is determined in the reference coordinate system using the measurement device; and the condition correction amount of the rotation axis is determined according to the first measurement value and the second measurement value. . The method according to item 20 of the scope of patent application, wherein the step of rotating the calibration wafer by an angle includes: placing the calibration wafer on a lifting pad of the rotating device, the rotating device being configured to be used To deposit a film on a processing wafer, the rotary device is connected to a base, the base has a top surface of the base extending from a central axis of the base, and the lifting pad is configured to be used for Placed on the top surface of the base or separated from the top surface of the base; along the central axis, the lifting pad is separated from the top surface of the base; and the lifting pad is at least one first defining the angle Between an angular direction and a second angular direction, it is rotated relative to the top surface of the base. The method according to item 21 of the patent application range, wherein the angle ranges from greater than 0 degrees to less than or equal to 180 degrees. The method as described in claim 21, wherein the step of rotating the calibration wafer by an angle includes: using an end effector of a spindle robot to remove the calibration wafer from one of the processing modules Taken at the first station, the mandrel robot is configured to transfer wafers between processing stations in the processing module, wherein the end effector is configured to rotate the wafer; and the rotated The calibration wafer is placed on the first station to be removed from the processing module. The method according to item 21 of the scope of patent application, wherein the step of determining a conditional correction amount comprises: determining a difference vector between the first measurement value and the second measurement value; and the difference vector The magnitude is halved to determine the offset of the rotation axis from the initial correction position, where the offset corresponds to the condition correction amount. The method according to item 21 of the scope of patent application, further comprising: applying the condition to the processing module, including performing at least one of the following operations: placing the processing module at a processing temperature, and applying a vacuum To the processing module.