TW201930642A - Shadow frame with sides having a varied profile for improved deposition uniformity - Google Patents

Shadow frame with sides having a varied profile for improved deposition uniformity Download PDF

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TW201930642A
TW201930642A TW107133766A TW107133766A TW201930642A TW 201930642 A TW201930642 A TW 201930642A TW 107133766 A TW107133766 A TW 107133766A TW 107133766 A TW107133766 A TW 107133766A TW 201930642 A TW201930642 A TW 201930642A
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corner
item
patent application
shielding frame
frame
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TW107133766A
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TWI829652B (en
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古田學
壽永 崔
崔羿
羅賓 廷訥
崔俊勇
王家瑞
蘇海 安華
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美商應用材料股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45591Fixed means, e.g. wings, baffles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/06Screens for shielding; Masks interposed in the electron stream
    • H01J29/07Shadow masks for colour television tubes
    • H01J29/073Mounting arrangements associated with shadow masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32633Baffles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2229/00Details of cathode ray tubes or electron beam tubes
    • H01J2229/07Shadow masks
    • H01J2229/0716Mounting arrangements of aperture plate to frame or vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2229/00Details of cathode ray tubes or electron beam tubes
    • H01J2229/07Shadow masks
    • H01J2229/0722Frame

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

Description

具有變化輪廓的側邊的遮蔽框架以改善沉積均勻性Masking frame with varying profile sides to improve deposition uniformity

本揭露之實施例一般地關於一種遮蔽框架(shadow frame),用於一電漿處理腔室(plasma processing chamber)中。The embodiments of the present disclosure generally relate to a shadow frame used in a plasma processing chamber.

現代半導體裝置需要特徵的形成,例如有機發光二極體(OLED)、電晶體與低k介電膜(low-k dielectric film),藉由從一玻璃基板來沉積與移除多個導電材料層、半導體材料層與介電材料層。玻璃基板製程技術包括電漿增強化學氣相沉積(plasma-enhanced chemical vapor deposition, PECVD)、物理氣相沉積(PVD)與蝕刻等。由於所需要之用以沉積一薄膜之相對較低的製程溫度與可使用電漿製程所產生之良好的薄膜品質,電漿製程係廣泛使用於平面顯示裝置(flat panel device)的生產中。Modern semiconductor devices require the formation of features such as organic light emitting diodes (OLEDs), transistors and low-k dielectric films by depositing and removing multiple layers of conductive material from a glass substrate , Semiconductor material layer and dielectric material layer. Glass substrate process technologies include plasma-enhanced chemical vapor deposition (PECVD), physical vapor deposition (PVD), and etching. Due to the relatively low process temperature required to deposit a thin film and the good film quality produced by the plasma process, the plasma process is widely used in the production of flat panel devices.

一般地,電漿製程包括在一真空腔室中放置一基板在一支撐構件(support member) (時常稱作一基座(susceptor)或加熱器)上,與形成相鄰於基板的上曝露表面(upper exposed surface)的一電漿。藉由引進一或多個製程氣體至腔室中與使用一電場來激發氣體以使氣體被分解為帶電粒子與中性粒子,電漿係被形成。一電漿可以被感應地(例如使用一感應射頻線圈(inductive RF coil))產生、和/或電容地(例如使用平行板電極(parallel plate electrode))產生、或藉由使用微波能量(microwave energy)來產生。Generally, the plasma process includes placing a substrate in a vacuum chamber on a support member (often referred to as a susceptor or heater), and forming an upper exposed surface adjacent to the substrate (upper exposed surface) a plasma. By introducing one or more process gases into the chamber and using an electric field to excite the gas so that the gas is decomposed into charged particles and neutral particles, the plasma system is formed. A plasma can be generated inductively (e.g. using an inductive RF coil), and / or capacitively (e.g. using a parallel plate electrode), or by using microwave energy (microwave energy) ) To produce.

在處理過程中,玻璃基板的邊緣和背面以及腔室內部組件必須受到保護,以免受到沉積。典型地,一沉積遮蔽裝置(deposition masking device)或遮蔽框架(shadow frame)係沿著基板周圍放置,以避免處理氣體或電漿到達基板的邊緣和背面,並在處理過程中將基板保持在支撐構件上。遮蔽框可設置在處理腔室中,在支撐構件上,所以,當支撐構件移動到一個較高的處理位置時,遮蔽框架係抬起並接觸基板一邊緣部分。因此,遮蔽框覆蓋基板上表面的周圍數毫米,從而避免被遮蔽框架所覆蓋的基板之部分上的背面與邊緣沉積。During processing, the edges and back of the glass substrate and the components inside the chamber must be protected from deposition. Typically, a deposition masking device or shadow frame is placed along the periphery of the substrate to prevent the processing gas or plasma from reaching the edges and back of the substrate and keep the substrate on the support during the process Component. The shielding frame may be disposed in the processing chamber on the support member, so when the support member moves to a higher processing position, the shielding frame is lifted up and contacts an edge portion of the substrate. Therefore, the shadow frame covers a few millimeters around the upper surface of the substrate, thereby avoiding the back and edge deposition on the portion of the substrate covered by the shadow frame.

伴隨著考慮使用遮蔽框架的效益,目前的遮蔽框架設計仍有一些缺點。相較於基板邊緣的內側沉積,先前技術的遮蔽框架典型地減少鄰近於遮蔽框架邊緣之基板的未覆蓋邊緣上的沉積。此沉積之非均勻性(deposition non-uniformity)在基板的角落係更誇大(exaggerated)。Along with considering the benefits of using a shelter frame, the current shelter frame design still has some disadvantages. The prior art masking frame typically reduces the deposition on the uncovered edge of the substrate adjacent to the masking frame edge compared to the inner side deposition of the substrate edge. The deposition non-uniformity is more exaggerated in the corners of the substrate.

因此,所屬領域中需要一種遮蔽框架,以在基板的周圍提供更多沉積。Therefore, there is a need in the art for a shadow frame to provide more deposition around the substrate.

本揭露之實施例一般地關於一種遮蔽框架,包括相鄰於兩個相對的次要邊緣框架構件(minor side frame member)的兩個相對的主要邊緣框架構件(major side frame member),主要邊緣框架構件與次要邊緣框架構件係使用一角隅支架(corner bracket)彼此耦接,其中角隅支架包括具有接腳(leg)的一角落鑲嵌件(corner inlay),接腳在彼此大致上正交的方向延伸。The embodiments of the present disclosure generally relate to a shadow frame, including two opposite major side frame members adjacent to two opposite minor side frame members, the main edge frame The member and the secondary edge frame member are coupled to each other using a corner bracket, wherein the corner bracket includes a corner inlay with a leg, and the feet are substantially orthogonal to each other Direction extends.

在另一實施例中,一遮蔽框架係包括相鄰於兩個相對的次要邊緣框架構件的兩個相對的主要邊緣框架構件,主要邊緣框架構件與次要邊緣框架構件在一耦合介面(coupling interface)使用一角隅支架彼此耦接,其中每一角隅支架包括具有接腳的一角落鑲嵌件,接腳在彼此大致上正交的方向延伸,且其中每一角隅支架包括一圓形轉角部(rounded corner)。In another embodiment, a shadow frame includes two opposing primary edge frame members adjacent to two opposing secondary edge frame members, the primary edge frame member and the secondary edge frame member are in a coupling interface (coupling) interface) using a corner bracket to couple with each other, wherein each corner bracket includes a corner inlay with a pin, the pin extends in a direction substantially orthogonal to each other, and wherein each corner bracket includes a round corner rounded corner).

在另一實施例中,一遮蔽框架係包括相鄰於兩個相對的次要邊緣框架構件的兩個相對的主要邊緣框架構件,主要邊緣框架構件與次要邊緣框架構件在包括一凹陷區域(recessed area)的一耦合介面使用一角隅支架彼此耦接,其中每一角隅支架包括一圓形轉角部與具有接腳的一角落鑲嵌件,接腳在彼此大致上正交的方向延伸,角落鑲嵌件包括一平坦上表面(planar upper surface)與一傾斜平坦表面(sloped planar surface),傾斜平坦表面與平坦上表面的一平面夾角一角度,且一凹口(notch)形成在凹陷區域的中心。In another embodiment, a shadow frame includes two opposing primary edge frame members adjacent to two opposing secondary edge frame members. The primary edge frame member and the secondary edge frame member include a recessed area ( A coupling interface of recessed area) is coupled to each other using a corner bracket, wherein each corner bracket includes a round corner portion and a corner inlay with a pin, the pin extends in a direction substantially orthogonal to each other, the corner is inlaid The piece includes a planar upper surface and a sloped planar surface. The inclined plane and the planar upper surface include an angle at an angle, and a notch is formed in the center of the recessed area.

因此可詳細理解的是上述本揭露之特徵的方式,本揭露之更詳細之描述(如以上概述)可參照實施例,某些實施例係繪示於附圖之中。值得注意的是,然而,這些附圖僅繪示本揭露之具代表性的實施例,因此並非用以限定本發明,本揭露可允許其他等效之實施例。Therefore, it can be understood in detail that the above-mentioned features of the disclosure are disclosed. For a more detailed description of the disclosure (as outlined above), reference may be made to the embodiments, some of which are shown in the drawings. It is worth noting that, however, these drawings only show representative embodiments of the present disclosure, and therefore are not intended to limit the present invention. The present disclosure may allow other equivalent embodiments.

為幫助理解,可能的情況下,係使用相同的參考符號以標示共同於圖式中的相同元件。可以預期的是,一實施例中的元件可被有利地利用於其他實施例上,不需要特別引用。To help understanding, where possible, the same reference symbols are used to indicate the same elements common to the drawings. It is expected that the elements in one embodiment can be used to advantage in other embodiments without special reference.

本揭露的實施例一般地關於使用於一處理腔室中的一種遮蔽框架。在一或更多下述之實施例中,一遮蔽框架係被形成為一多部件遮蔽框架主體(multi-piece shadow frame body)。The embodiments of the present disclosure generally relate to a shielding frame used in a processing chamber. In one or more embodiments described below, a shadow frame is formed as a multi-piece shadow frame body.

由於狹窄的端緣(edge lip),遮蔽框架增強了非晶矽均勻性(amorphous silicon uniformity),因此基板的遮蔽較少。電性絕緣材料(electrically insulating material)的均勻排列亦幫助了非晶矽沉積的均勻性(amorphous silicon deposition uniformity)。參照以下圖式,係更詳細說明本揭露之實施例。Due to the narrow edge lip, the shadow frame enhances the amorphous silicon uniformity, so the substrate has less shadow. The uniform arrangement of electrically insulating materials also helps the amorphous silicon deposition uniformity. With reference to the following drawings, the disclosed embodiments are described in more detail.

第1圖係具有根據一實施例之一遮蔽框架的一例示處理腔室10的示意剖面圖。可從本揭露受益的處理腔室的一例子係一電漿增強化學氣相沉積處理腔室,可取自美商業凱科技股份有限公司(AKT America, Inc.),美商業凱科技股份有限公司是位於加州聖塔克拉拉之應用材料股份有限公司(Applied Materials, Inc., Santa Clara, California)之子公司。可理解的是,包括其他製造廠商的電漿處理腔室的其他電漿處理腔室可適合於實現本揭露。FIG. 1 is a schematic cross-sectional view of an exemplary processing chamber 10 having a shielding frame according to an embodiment. An example of a processing chamber that can benefit from this disclosure is a plasma enhanced chemical vapor deposition processing chamber, which can be taken from AKT America, Inc., AKT America, Inc. It is a subsidiary of Applied Materials, Inc., Santa Clara, California, located in Santa Clara, California. It is understandable that other plasma processing chambers including plasma processing chambers of other manufacturers may be suitable for implementing the present disclosure.

處理腔室10包括一腔室主體(chamber body)12與設置於其上的一背板(backing plate)14。腔室主體12具有一處理區域(processing region)16。腔室主體12與處理腔室10的相關元件的尺寸並無限制且一般按比例地(proportionally)大於待處理的一基板29的尺寸。任何適合的基板尺寸可被處理。適合的基板尺寸的例子包括具有約5,500平方公分或更大的一表面積的基板,例如是約25,000平方公分或更大,例如是約50,000平方公分或更大。一實施例中,具有約100,000平方公分或更大的一表面積的一基板可被處理。The processing chamber 10 includes a chamber body 12 and a backing plate 14 disposed thereon. The chamber body 12 has a processing region 16. The dimensions of the chamber body 12 and related components of the processing chamber 10 are not limited and are generally proportionally larger than the size of a substrate 29 to be processed. Any suitable substrate size can be processed. Examples of suitable substrate sizes include substrates having a surface area of about 5,500 square centimeters or more, for example about 25,000 square centimeters or more, for example about 50,000 square centimeters or more. In one embodiment, a substrate having a surface area of about 100,000 cm2 or more can be processed.

一氣體分佈板(gas distribution plate)18係安裝至背板14且定義處理區域16的上邊界。多個孔20係形成在氣體分佈板18之中,以允許處理氣體於其中的輸送(delivery)。一氣體源(gas source)40可輸送(deliver)一氣體至形成在氣體分佈板18與背板14之間的充氣室(plenum),以均勻地分配處理氣體,因此均勻地輸送處理氣體來穿過氣體分佈板18。一電源(power source)42係電性耦接至氣體分佈板18以產生來自處理氣體的一電漿,電漿流動穿過孔20。基板支撐件(substrate support)32係幾乎完全地由鋁或另一導電金屬所組成,以作為氣體分佈板18的一相對電極(counter-electrode)。電源42可以是使用於電漿增強化學氣相沉積腔室的任何類型的電源,例如一射頻功率源(RF power source)。一遮蔽框架22係顯示為設置在一基板支撐件32上。遮蔽框架22包括一遮蔽框架主體(shadow frame body)24,遮蔽框架主體24具有貼附(affix)於其上的一框架構件(frame member)26。A gas distribution plate 18 is mounted to the back plate 14 and defines the upper boundary of the processing area 16. A plurality of holes 20 are formed in the gas distribution plate 18 to allow delivery of process gas therein. A gas source 40 can deliver a gas to the plenum formed between the gas distribution plate 18 and the back plate 14 to evenly distribute the processing gas, and thus uniformly deliver the processing gas to pass through Cross the gas distribution plate 18. A power source 42 is electrically coupled to the gas distribution plate 18 to generate a plasma from the processing gas, and the plasma flows through the hole 20. Substrate support 32 is almost entirely composed of aluminum or another conductive metal to serve as a counter-electrode of gas distribution plate 18. The power source 42 may be any type of power source used in the plasma enhanced chemical vapor deposition chamber, such as an RF power source. A shadow frame 22 is shown as being disposed on a substrate support 32. The shadow frame 22 includes a shadow frame body 24 having a frame member 26 affixed thereto.

腔室主體12亦包括一遮蔽框架支撐件(shadow frame support)44,其係環狀地形成在基板支撐件32的周圍。當基板支撐件32係位於一較低的位置,遮蔽框架22係藉由遮蔽框架支撐件44來支持。The chamber body 12 also includes a shadow frame support 44 which is formed annularly around the substrate support 32. When the substrate support 32 is located at a lower position, the shielding frame 22 is supported by the shielding frame support 44.

也可稱作一基座或加熱器之基板支撐件32,係設置在處理腔室10之中且藉由一馬達33來致動(actuate)。在一升高的處理位置時,具有設置在基板支撐件32之一基板支撐面(substrate supporting surface)34上的基板29的基板支撐件32係支撐遮蔽框架22的遮蔽框架主體24且定義處理區域16的下邊界,以使基板29係被定位在處理區域16中。框架構件26延伸覆蓋基板29的一部份,且接觸基板29的一部份,而遮蔽框架主體24則被支撐於基板支撐面34上。The substrate support 32, which may also be referred to as a pedestal or heater, is disposed in the processing chamber 10 and is actuated by a motor 33. At an elevated processing position, the substrate support 32 having the substrate 29 disposed on one of the substrate supporting surfaces 34 of the substrate support 32 supports the shielding frame body 24 of the shielding frame 22 and defines the processing area The lower boundary of 16 so that the substrate 29 is positioned in the processing area 16. The frame member 26 extends to cover a part of the substrate 29 and contacts a part of the substrate 29, and the shielding frame body 24 is supported on the substrate support surface 34.

基板29係透過形成在腔室主體12中的一開口36被引入處理腔室10與從處理腔室10移出,開口36係選擇性地藉由一狹縫閥機構(slit valve mechanism) (未繪示)來密封。升舉銷(lift pin)38係可滑動地設置穿過基板支撐件32且可適合於保持一基板於升舉銷38的一上端。藉由使用馬達33而降低基板支撐件32,升舉銷38可被致動。The substrate 29 is introduced into and removed from the processing chamber 10 through an opening 36 formed in the chamber body 12, and the opening 36 is selectively passed through a slit valve mechanism (not shown) Shown) to seal. The lift pin 38 is slidably disposed through the substrate support 32 and can be adapted to hold a substrate at an upper end of the lift pin 38. By using the motor 33 to lower the substrate support 32, the lift pin 38 can be actuated.

第2圖係第1圖的基板支撐件32的等角視圖(isometric view)與根據一實施例之一遮蔽框架22。遮蔽框架22包括相鄰於兩個相對之次要邊緣框架構件28的兩個相對之主要邊緣框架構件26。主要邊緣框架構件26的每一者係藉由角隅支架30耦接至次要邊緣框架構件28。此外,基板支撐件32包括在基板支撐件32的一基板接收表面(substrate receiving surface)52與一周圍突架(peripheral ledge)54之間的介面的角落鑲嵌件50。如上所述,基板支撐件32的一主體56係由鋁或其他導電性材料(electrically conductive material)所組成,以作為連接氣體分佈板18的一相對電極。然而,角落鑲嵌件50可由一陶瓷材料所組成,嵌入(recessed)於形成在主體56中的一凹穴(pocket)內。在一基板係些微未對準於(misaligned with)基板支撐件32的基板接收表面52的情況下,角落鑲嵌件50可減少電弧(arcing)。FIG. 2 is an isometric view of the substrate support 32 of FIG. 1 and the shielding frame 22 according to one embodiment. The shadow frame 22 includes two opposing primary edge frame members 26 adjacent to two opposing secondary edge frame members 28. Each of the primary edge frame members 26 is coupled to the secondary edge frame members 28 by corner brackets 30. In addition, the substrate support 32 includes a corner inlay 50 at the interface between a substrate receiving surface 52 of the substrate support 32 and a peripheral ledge 54. As described above, a main body 56 of the substrate support 32 is composed of aluminum or other electrically conductive material to serve as a counter electrode connected to the gas distribution plate 18. However, the corner insert 50 may be composed of a ceramic material, which is recessed in a pocket formed in the main body 56. In the case where a substrate is slightly misaligned with the substrate receiving surface 52 of the substrate support 32, the corner inlay 50 can reduce arcing.

第3圖係第2圖的基板支撐件32與遮蔽框架22的放大等角視圖。角落鑲嵌件50係顯示為形成在基板支撐件32的主體56中的一凹穴58中。角隅支架30係亦顯示為耦接一次要邊緣框架構件28與一主要邊緣框架構件26。角隅支架30包括一圓弧形(radiused)或圓形之轉角部60與一接腳62,其正交地從主要邊緣框架構件26的一縱向方向(longitudinal direction)延伸。一方面中,主要邊緣框架構件26,包括在相對兩端上的接腳62,係形成「C」字形。角隅支架30亦包括一角落鑲嵌件64,分別耦接至主要邊緣框架構件26與次要邊緣框架構件28的一內周圍邊緣(inner peripheral edge)66、68。角落鑲嵌件64可使用一固定件(fastener)70來固定至主要邊緣框架構件26。可包括一接縫覆蓋件(seam cover)72,以覆蓋主要邊緣框架構件26與角落鑲嵌件64之間的介面,並覆蓋角落鑲嵌件64與次要邊緣框架構件28之間的介面。固定件70可用以固定接縫覆蓋件72於主要邊緣框架構件26上。所有的角落鑲嵌件64、固定件70、主要邊緣框架構件26、次要邊緣框架構件28與接縫覆蓋件72可由陶瓷材料所製成。FIG. 3 is an enlarged isometric view of the substrate support 32 and the shield frame 22 of FIG. 2. The corner insert 50 is shown as being formed in a recess 58 in the main body 56 of the substrate support 32. The corner bracket 30 is also shown as coupling the primary edge frame member 28 and a primary edge frame member 26. The corner bracket 30 includes a radiused or rounded corner portion 60 and a pin 62 that extend orthogonally from a longitudinal direction of the main edge frame member 26. In one aspect, the main edge frame member 26, including pins 62 on opposite ends, is formed in a "C" shape. The corner bracket 30 also includes a corner insert 64 coupled to an inner peripheral edge 66, 68 of the primary edge frame member 26 and the secondary edge frame member 28, respectively. The corner insert 64 may be secured to the main edge frame member 26 using a fastener 70. A seam cover 72 may be included to cover the interface between the primary edge frame member 26 and the corner insert 64, and to cover the interface between the corner insert 64 and the secondary edge frame member 28. The fastener 70 can be used to fix the seam cover 72 to the main edge frame member 26. All corner inserts 64, fasteners 70, primary edge frame members 26, secondary edge frame members 28, and seam cover 72 may be made of ceramic materials.

第4圖係角隅支架30的爆炸等角視圖。主要邊緣框架構件26包括一凹陷區域74,角落鑲嵌件64可被放置於凹陷區域74中。由於在凹陷區域74中,一90度角可能難以形成,一半徑範圍(radius)或凹口76可被提供在凹陷區域74的一內邊緣(inner edge)上。針對第3圖所示的固定件70,凹陷區域74可具有開口78。Figure 4 is an exploded isometric view of the corner bracket 30. The main edge frame member 26 includes a recessed area 74 in which the corner insert 64 can be placed. Since a 90 degree angle may be difficult to form in the recessed area 74, a radius or notch 76 may be provided on an inner edge of the recessed area 74. For the fixture 70 shown in FIG. 3, the recessed area 74 may have an opening 78.

角落鑲嵌件64包括一主體79,主體79具有一平坦表面(planar surface)80,平坦表面80過渡(transition)至一錐形(tapered)或傾斜平坦表面82。開口78係形成在主體79中,以接收第3圖所示的固定件70。主體79包括兩個接腳81、83,沿著大致上彼此正交的方向延伸。在接腳81與83上的傾斜平坦表面82的交叉點具有一圓角(radius corner)84。The corner insert 64 includes a main body 79 having a planar surface 80 that transitions to a tapered or inclined flat surface 82. The opening 78 is formed in the main body 79 to receive the fixing member 70 shown in FIG. 3. The main body 79 includes two pins 81 and 83 extending in directions substantially orthogonal to each other. The intersection of the inclined flat surfaces 82 on the pins 81 and 83 has a radius corner 84.

一耦合介面86係用於耦接主要邊緣框架構件26至次要邊緣框架構件28。耦合介面86包括多個銷(pin)88。銷88係插入形成在主要邊緣框架構件26與次要邊緣框架構件28的邊緣中的開口中。固定件90可用以固定銷88於主要邊緣框架構件26與次要邊緣框架構件28中。銷88可以是一金屬材料,例如鋁。固定件90可以由一陶瓷材料所製成。A coupling interface 86 is used to couple the primary edge frame member 26 to the secondary edge frame member 28. The coupling interface 86 includes a plurality of pins 88. The pin 88 is inserted into the opening formed in the edge of the primary edge frame member 26 and the secondary edge frame member 28. The fixing 90 can be used to fix the pin 88 in the primary edge frame member 26 and the secondary edge frame member 28. The pin 88 may be a metallic material, such as aluminum. The fixing member 90 may be made of a ceramic material.

每一接縫覆蓋件72包括一第一表面92與低於第一表面92的一平面的一凹陷的第二表面(recessed second surface)94。凹陷的第二表面94的角度可以是實質上符合(match)角落鑲嵌件64的傾斜平坦表面82的角度。Each seam cover 72 includes a first surface 92 and a recessed second surface 94 that is a plane lower than the first surface 92. The angle of the recessed second surface 94 may be an angle that substantially matches the inclined flat surface 82 of the corner insert 64.

第5圖係沿著第4圖的線段5-5的框架構件95的側面剖面圖。框架構件95可以是主要邊緣框架構件26或次要邊緣框架構件28。係顯示一內周圍邊緣96,內周圍邊緣96可以是主要邊緣框架構件26或次要邊緣框架構件28的內周圍邊緣66、68。內周圍邊緣96包括一平坦表面97,平坦表面97係正交於框架構件95的一上表面98的一平面。內周圍邊緣96可稱作一「牛鼻(bull nose)」配置。Fig. 5 is a side cross-sectional view of the frame member 95 along the line 5-5 of Fig. 4. The frame member 95 may be the primary edge frame member 26 or the secondary edge frame member 28. An inner peripheral edge 96 is shown, which may be the inner peripheral edge 66, 68 of the primary edge frame member 26 or the secondary edge frame member 28. The inner peripheral edge 96 includes a flat surface 97 that is a plane orthogonal to an upper surface 98 of the frame member 95. The inner peripheral edge 96 may be referred to as a "bull nose" configuration.

第6圖係沿著第4圖的線段6-6的角落鑲嵌件64的側面剖面圖。傾斜平坦表面82包括相對於平坦表面80的一平面的一角度α。角度α可以是大約6度至大約8度,例如大約7度。傾斜平坦表面82可稱作一「刀緣(knife edge)」配置。一基板覆蓋區域(substrate coverage area)99係顯示於第6圖。基板覆蓋區域99可以是大約7毫米、大約5毫米或大約3毫米。Figure 6 is a side cross-sectional view of the corner insert 64 along the line 6-6 of Figure 4. The inclined flat surface 82 includes an angle α with respect to a plane of the flat surface 80. The angle α may be about 6 degrees to about 8 degrees, for example about 7 degrees. The inclined flat surface 82 may be referred to as a "knife edge" configuration. A substrate coverage area 99 is shown in Figure 6. The substrate coverage area 99 may be about 7 mm, about 5 mm, or about 3 mm.

廣泛的測試係使用如本文所述之遮蔽框架22來進行。在相鄰於主要邊緣框架構件26與次要邊緣框架構件28的內周圍邊緣66、68的基板的邊緣上的沉積與角落鑲嵌件64的傾斜平坦表面82的沉積,顯示一增加的厚度分佈(thickness profile)。Extensive testing is performed using the shielding frame 22 as described herein. The deposition on the edge of the substrate adjacent to the inner peripheral edges 66, 68 of the primary edge frame member 26 and the secondary edge frame member 28 and the deposition of the inclined flat surface 82 of the corner insert 64 show an increased thickness distribution thickness profile).

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In summary, although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be deemed as defined by the scope of the attached patent application.

10‧‧‧處理腔室10‧‧‧Process chamber

12‧‧‧腔室主體12‧‧‧Chamber main body

14‧‧‧背板14‧‧‧Backplane

16‧‧‧處理區域16‧‧‧ Processing area

18‧‧‧氣體分佈板18‧‧‧Gas distribution board

20‧‧‧孔20‧‧‧ hole

22‧‧‧遮蔽框架22‧‧‧Shading frame

24‧‧‧遮蔽框架主體24‧‧‧Shadow frame main body

26、28‧‧‧框架構件26、28‧‧‧Frame member

29‧‧‧基板29‧‧‧ substrate

30‧‧‧角隅支架30‧‧‧corner bracket

32‧‧‧基板支撐件32‧‧‧Substrate support

33‧‧‧馬達33‧‧‧Motor

34‧‧‧基板支撐面34‧‧‧Substrate support surface

36‧‧‧開口36‧‧‧ opening

38‧‧‧升舉銷38‧‧‧ Promotion

40‧‧‧氣體源40‧‧‧gas source

42‧‧‧電源42‧‧‧Power

44‧‧‧遮蔽框架支撐件44‧‧‧Shading frame support

50‧‧‧角落鑲嵌件50‧‧‧corner inlay

52‧‧‧基板接收表面52‧‧‧Substrate receiving surface

54‧‧‧周圍突架54‧‧‧ Surrounding truss

56‧‧‧主體56‧‧‧Main

58‧‧‧凹穴58‧‧‧Cavities

60‧‧‧圓形轉角部60‧‧‧round corner

62‧‧‧接腳62‧‧‧pin

64‧‧‧角落鑲嵌件64‧‧‧corner inlay

66、68‧‧‧內周圍邊緣66, 68‧‧‧ inner periphery

70‧‧‧固定件70‧‧‧Fixed parts

72‧‧‧接縫覆蓋件72‧‧‧Seam cover

74‧‧‧凹陷區域74‧‧‧Sag area

76‧‧‧凹口76‧‧‧Notch

78‧‧‧開口78‧‧‧ opening

79‧‧‧主體79‧‧‧Main

80‧‧‧平坦表面80‧‧‧flat surface

81、83‧‧‧接腳81, 83‧‧‧pin

82‧‧‧傾斜平坦表面82‧‧‧Tilt flat surface

84‧‧‧圓角84‧‧‧ Fillet

86‧‧‧耦合介面86‧‧‧Coupling interface

88‧‧‧銷88‧‧‧pin

90‧‧‧固定件90‧‧‧Fixed parts

92‧‧‧第一表面92‧‧‧First surface

94‧‧‧凹陷第二表面94‧‧‧recessed second surface

95‧‧‧框架構件95‧‧‧Frame member

96‧‧‧內周圍邊緣96‧‧‧ inner periphery

97‧‧‧平坦表面97‧‧‧flat surface

98‧‧‧上表面98‧‧‧Upper surface

99‧‧‧基板覆蓋區域99‧‧‧ substrate coverage area

5-5、6-6‧‧‧線段5-5, 6-6‧‧‧ line

α‧‧‧角度α‧‧‧Angle

第1圖係根據一實施例之使用一遮蔽框架的一例示處理腔室的示意剖面圖。 第2圖係根據一實施例之遮蔽框架與第1圖的基板支撐件的等角視圖。 第3圖係第2圖的基板支撐件與遮蔽框架的等角視圖。 第4圖係角隅支架的爆炸等角視圖。 第5圖係沿著第4圖的線段5-5的一框架構件的側面剖面圖。 第6圖係沿著第4圖的線段6-6的角落鑲嵌件的側面剖面圖。FIG. 1 is a schematic cross-sectional view of an exemplary processing chamber using a shielding frame according to an embodiment. FIG. 2 is an isometric view of the shielding frame and the substrate support of FIG. 1 according to an embodiment. Figure 3 is an isometric view of the substrate support and shield frame of Figure 2. Figure 4 is an exploded isometric view of the corner bracket. Figure 5 is a side cross-sectional view of a frame member along the line 5-5 of Figure 4. Figure 6 is a side cross-sectional view of the corner insert along line 6-6 of Figure 4.

Claims (21)

一種遮蔽框架(shadow frame),包括: 兩個相對的主要邊緣框架構件(major side frame member),相鄰於兩個相對的次要邊緣框架構件(minor side frame member),在該些主要邊緣框架構件與該些次要邊緣框架構件之間的交叉處係使用一角隅支架(corner bracket)彼此耦接,其中該角隅支架的每一者包括具有多個接腳(leg)的一角落鑲嵌件(corner inlay),該些接腳係沿著彼此大致上正交的方向延伸。A shadow frame includes: two opposing major side frame members, adjacent to two opposing minor side frame members, and the main edge frames The intersection between the member and the secondary edge frame members is coupled to each other using a corner bracket, wherein each of the corner brackets includes a corner insert with a plurality of legs (corner inlay), the pins extend in directions that are substantially orthogonal to each other. 如申請專利範圍第1項所述之遮蔽框架,其中該角隅支架的該每一者包括一接縫覆蓋件(seam cover),各該接縫覆蓋件各自放置在各自的角落鑲嵌件與該兩個相對的主要邊緣框架構件的一主要邊緣構件(major side member)之間的介面,與在各自的角落鑲嵌件與該些次要邊緣框架構件的一次要邊緣構件(minor side member)之間的介面。The shielding frame as described in item 1 of the scope of the patent application, wherein each of the corner brackets includes a seam cover, each of the seam covers is placed in its own corner inlay and the The interface between a major side member of two opposite main edge frame members, and between the respective corner inlay and the minor side member of the minor edge frame members Interface. 如申請專利範圍第2項所述之遮蔽框架,其中該角落鑲嵌件包括一傾斜平坦表面(sloped planar surface),該傾斜平坦表面與一平坦上表面(planar upper surface)的一平面夾角一角度。The shielding frame as described in item 2 of the scope of the patent application, wherein the corner inlay includes a sloped planar surface, and the sloping planar surface is at an angle to a plane of a planar upper surface. 如申請專利範圍第3項所述之遮蔽框架,其中該傾斜平坦表面與該平坦上表面之夾角大約是7度。The shielding frame as described in item 3 of the patent application scope, wherein the angle between the inclined flat surface and the flat upper surface is about 7 degrees. 如申請專利範圍第2項所述之遮蔽框架,其中該接縫覆蓋件具有一第一表面與一第二表面。The shielding frame as described in item 2 of the patent application scope, wherein the seam cover has a first surface and a second surface. 如申請專利範圍第5項所述之遮蔽框架,其中該第二表面係凹陷的,且該第二表面低於該第一平面的一平面。The shielding frame as described in item 5 of the patent application range, wherein the second surface is concave and the second surface is a plane lower than the first plane. 如申請專利範圍第6項所述之遮蔽框架,其中該角落鑲嵌件包括一傾斜平坦表面,該傾斜平坦表面與一平坦上表面的一平面夾角一角度。The shielding frame as described in item 6 of the patent application scope, wherein the corner inlay includes an inclined flat surface, and the inclined flat surface is at an angle to a plane of a flat upper surface. 如申請專利範圍第7項所述之遮蔽框架,其中該第二表面的角度係實質上符合(match)該傾斜平坦表面的角度。The shielding frame as described in item 7 of the patent application range, wherein the angle of the second surface substantially matches the angle of the inclined flat surface. 如申請專利範圍第1項所述之遮蔽框架,其中該角隅支架包括一圓形轉角部(rounded corner)。The shielding frame as described in item 1 of the patent application scope, wherein the corner bracket includes a rounded corner. 一種遮蔽框架,包括: 兩個相對的主要邊緣框架構件,相鄰於兩個相對的次要邊緣框架構件,該些主要邊緣框架構件與該些次要邊緣框架構件在一耦合介面(coupling interface)係使用一角隅支架彼此耦接,其中該角隅支架的每一者包括具有多個接腳的一角落鑲嵌件,該些接腳係沿著彼此大致上正交的方向延伸,且其中該角隅支架的每一者包括一圓形轉角部。A shielding frame includes: two opposing primary edge frame members adjacent to two opposing secondary edge frame members, the primary edge frame members and the secondary edge frame members in a coupling interface (coupling interface) A corner bracket is used to couple to each other, wherein each of the corner brackets includes a corner inlay with a plurality of pins, the pins extend in directions that are substantially orthogonal to each other, and wherein the corner Each of the corner brackets includes a rounded corner. 如申請專利範圍第10項所述之遮蔽框架,其中該耦合介面包括複數個銷(pin)。The shielding frame as described in item 10 of the patent application scope, wherein the coupling interface includes a plurality of pins. 如申請專利範圍第10項所述之遮蔽框架,其中該耦合介面包括一接縫覆蓋件。The shielding frame as described in item 10 of the patent application scope, wherein the coupling interface includes a seam cover. 如申請專利範圍第12項所述之遮蔽框架,其中該接縫覆蓋件具有一第一表面與一第二表面。The shielding frame as described in item 12 of the patent application range, wherein the seam cover has a first surface and a second surface. 如申請專利範圍第13項所述之遮蔽框架,其中該第二表面係凹陷的,且該第二表面低於該第一平面的一平面。The shielding frame as described in item 13 of the patent application range, wherein the second surface is concave, and the second surface is a plane lower than the first plane. 如申請專利範圍第14項所述之遮蔽框架,其中該角落鑲嵌件包括一傾斜平坦表面,該傾斜平坦表面與一平坦上表面的一平面相交一角度。The shielding frame as described in item 14 of the patent application range, wherein the corner insert includes an inclined flat surface that intersects a plane of a flat upper surface at an angle. 如申請專利範圍第15項所述之遮蔽框架,其中該第二表面的角度係實質上符合該傾斜平坦表面的角度。The shielding frame as described in item 15 of the patent application range, wherein the angle of the second surface substantially matches the angle of the inclined flat surface. 一種遮蔽框架,包括: 兩個相對的主要邊緣框架構件,相鄰於兩個相對的次要邊緣框架構件,該些主要邊緣框架構件與該些次要邊緣框架構件在包括一凹陷區域(recessed area)的一耦合介面使用一角隅支架來彼此耦接,其中: 該角隅支架的每一者包括一圓形轉角部與具有多個接腳的一角落鑲嵌件,該些接腳沿著彼此大致上正交的方向延伸; 該角落鑲嵌件包括一平坦上表面與一傾斜平坦表面,該傾斜平坦表面與該平坦上表面的一平面相交一角度;以及 一凹口(notch),形成在該凹陷區域的中心。A shielding frame includes: two opposing primary edge frame members adjacent to two opposing secondary edge frame members, the primary edge frame members and the secondary edge frame members including a recessed area (recessed area) ) Of a coupling interface using a corner bracket to couple to each other, wherein: each of the corner brackets includes a round corner portion and a corner inlay with a plurality of pins, the pins are substantially along each other Extending in an orthogonal direction; the corner insert includes a flat upper surface and an inclined flat surface, the inclined flat surface intersects a plane of the flat upper surface at an angle; and a notch (notch) formed in the recess The center of the area. 如申請專利範圍第17項所述之遮蔽框架,其中該耦合介面包括一接縫覆蓋件。The shielding frame as described in item 17 of the patent application scope, wherein the coupling interface includes a seam cover. 如申請專利範圍第18項所述之遮蔽框架,其中該接縫覆蓋件具有一第一表面與一第二表面。The shielding frame as described in item 18 of the patent application range, wherein the seam cover has a first surface and a second surface. 如申請專利範圍第19項所述之遮蔽框架,其中該第二表面係凹陷的,且該第二表面低於該第一表面的一平面。The shielding frame as described in item 19 of the patent application range, wherein the second surface is concave, and the second surface is lower than a plane of the first surface. 如申請專利範圍第17項所述之遮蔽框架,其中該耦合介面包括複數個銷。The shielding frame as described in item 17 of the patent application scope, wherein the coupling interface includes a plurality of pins.
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