TW201929028A - Electron beam device, illumination optical system, and method for manufacturing device - Google Patents

Abstract

The present invention provides an electron beam device capable of minimizing wasted electrons that do not contribute to the processing of a target. The electron beam device, which irradiates a photoelectric element with light and irradiates the target with an electron beam generated by the photoelectric element, comprises: an illumination optical system that illuminates a first surface; a pattern generator that has a plurality of reflective elements arranged on the first surface and generates a plurality of light beams with the light from the illumination optical system; and a projection optical system for projecting the plurality of light beams from the pattern generator onto the photoelectric conversion surface of the photoelectric element. The illumination optical system includes a focusing optical system for converging a first beam emitted from an illumination pupil in a first direction and a second beam emitted from the illumination pupil in a second direction different from the fist direction, the illumination optical system obliquely illuminating the first surface that is arranged with the normal line tilted relative to the optical axis of the illumination optical system. The focusing optical system includes a focal point tuning member that establishes a focal position in the optical axis direction for the first beam different from a focal position in the optical axis direction for the second beam.

Description

   Electron beam device, illumination optical system, and element manufacturing method   

The present invention relates to an electron beam device and an element manufacturing method, and more particularly, to an electron beam device that irradiates light to a photoelectric element and irradiates electrons generated from the above-mentioned photoelectric element as an electron beam to a target, and an electron beam device using the same. Element manufacturing method.

In recent years, a complementary lithography using a liquid immersion exposure technique using an ArF light source and a complementary ion beam exposure technique (such as an electron beam exposure technique) has been proposed. In the complementary lithography, a simple line and space pattern (hereinafter, referred to as an L / S pattern as appropriate) is formed by using double patterning or the like in liquid immersion exposure using an ArF light source. Then, by using exposure using an electron beam, cutting of a line pattern or formation of a channel is performed.

In the complementary lithography, an electron beam exposure device can be used, which includes, for example, a multi-beam optical system that performs opening and closing of a beam using a plurality of masking light holes (for example, refer to Patent Document 1). However, the method is not limited to the method of blocking the light holes, and in the case of the electron beam exposure device, there are aspects that should be improved. In addition, it is not limited to an exposure device, and there are also aspects that should be improved in the processing or processing of an object using an electron beam, the processing and processing device, or the inspection device.

    Prior art literature         Patent literature    

Patent Document 1: U.S. Patent Publication No. 2015/0200074

According to a first aspect of the present invention, there is provided an electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target, and includes: an illumination optical system that A pattern generator having a plurality of reflective elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that will be from the pattern generator The plurality of light beams are projected onto a photoelectric conversion surface of the photoelectric element; and the illumination optical system includes a first light beam emitted from the illumination pupil in a first direction, and the first light beam is emitted from the illumination pupil along the above-mentioned direction. A condensing optical system for condensing a second light beam emitted in a second direction having a different first direction, and obliquely incident illumination on the first surface arranged so that a normal line is inclined with respect to an optical axis of the illumination optical system. The above-mentioned condensing optical system includes a condensing point adjusting member that adjusts a condensing position in the optical axis direction of the first light beam and the optical axis of the second light beam The condensed to different positions.

According to a second aspect of the present invention, there is provided an electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target, and includes an illumination optical system that A pattern generator having a plurality of reflective elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that will be from the pattern generator The plurality of light beams are projected onto the photoelectric conversion surface of the photoelectric element; and the illumination optical system includes a first light beam that will reach a first position on the first surface and a second position that will reach a second position on the first surface. A condensing optical system for condensing a second light beam, obliquely incident illumination on the first surface arranged so that a normal line is inclined with respect to an optical axis of the illumination optical system; the condensing optical system has a condensing point The adjusting member is configured such that a light condensing position in the optical axis direction of the first light beam is different from a light condensing position in the optical axis direction of the second light beam.

According to a third aspect of the present invention, there is provided an electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target; the illumination optical system includes: A pattern generator having a plurality of reflective elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that will be from the pattern generator The plurality of light beams are projected onto a photoelectric conversion surface of the photoelectric element; and the illumination optical system includes a first light beam emitted from the illumination pupil in a first direction, and the first light beam is emitted from the illumination pupil along the above-mentioned direction. A condensing optical system for condensing a second light beam emitted in a second direction which is different from the first direction; the light condensing optical system includes a condensing point adjusting member that condenses the light condensing position in the optical axis direction of the first light beam, and The second light beam has different light-condensing positions in the optical axis direction.

According to a fourth aspect of the present invention, there is provided an electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the photoelectric element to a target, and includes an illumination optical system that A pattern generator having a plurality of reflective elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that will be from the pattern generator The plurality of light beams are projected onto a photoelectric conversion surface of the photoelectric element; and the illumination optical system performs oblique incident illumination on the first surface arranged so that a normal line is inclined with respect to an optical axis of the projection optical system.

According to a fifth aspect of the present invention, there is provided an illumination optical system for illuminating an illuminated surface with light from a light source. The illumination optical system includes a condensing optical system that emits light from an illumination pupil in a first direction. The first light beam and the second light beam emitted from the illumination pupil in a second direction different from the first direction are condensed in such a manner that the normal is inclined with respect to the optical axis of the illumination optical system. The first and second positions of the irradiated surface are arranged; and the condensing optical system includes a condensing point adjustment member that adjusts a condensing position in the optical axis direction of the first light beam and the second light beam The light condensing positions in the optical axis directions are different.

According to a sixth aspect of the present invention, there is provided an illumination optical system for illuminating an illuminated surface by using light from a light source. The illumination optical system includes a condensing optical system, which is emitted from the illumination pupil to reach a position relative to the above. The first light beam at the first position on the illuminated surface, which is arranged with the optical axis of the illumination optical system tilted to the normal, and the second light beam that is emitted from the illumination pupil and reaches the second position on the illuminated surface. Two light beams are condensed; and the condensing optical system includes a condensing point adjustment member that makes a light condensing position in the optical axis direction of the first light beam different from a light condensing position in the optical axis direction of the second light beam.

According to a seventh aspect of the present invention, there is provided an illumination optical system for illuminating an illuminated surface with light from a light source. The illumination optical system includes a condensing optical system that emits light from an illumination pupil in a first direction. The first light beam and the second light beam emitted from the illumination pupil in a second direction different from the first direction are respectively focused on the first position and the second position on the illuminated surface; and The condensing optical system includes a condensing point adjustment member that makes a light condensing position in the optical axis direction of the first light beam different from a light condensing position in the optical axis direction of the second light beam.

According to an eighth aspect of the present invention, there is provided an illumination optical system for illuminating an irradiated surface with light from a light source. The illuminating optical system includes a condensing optical system that emits from an illumination pupil to reach the irradiated surface. The first light beam at the first position above and the second light beam emitted from the illumination pupil and reaching the second position at the irradiated surface are condensed; and the condensing optical system includes a condensing point adjustment member, This makes the light condensing position in the optical axis direction of the first light beam different from the light condensing position in the optical axis direction of the second light beam.

According to a ninth aspect of the present invention, there is provided an illumination optical system for illuminating an irradiated surface with light from a light source. The illumination optical system includes an optical integrator having a light source arranged in parallel in a light path of the light from the light source. A plurality of wavefront segmentation elements, and a plurality of light source images elongated in the first direction are formed on the illumination pupil; and a condensing optical system that focuses light beams from the plurality of light source images on the illuminated surface And because interference fringes are formed in the second direction orthogonal to the first direction in the illuminated surface, the rectangular rectangular field in the first direction is spaced in the second direction. Spaced to form a plurality.

According to a tenth aspect of the present invention, there is provided an electron beam device including: an illumination optical system of a fifth aspect, a sixth aspect, a seventh aspect, an eighth aspect, or a ninth aspect; a pattern generator having a A plurality of reflective elements controlled separately; and a projection optical system, which optically conjugately arranges a light receiving surface on which the plurality of reflective elements are arranged and a photoelectric conversion surface of a photoelectric element; and The light-receiving surface on the illuminated surface is subjected to oblique incidence illumination, and the light from the light-receiving surface is irradiated onto the photoelectric element via the projection optical system, and an electron beam generated from the photoelectric element is irradiated onto a target.

According to an eleventh aspect of the present invention, there is provided a device manufacturing method including a lithography step; the method includes: forming a line and space pattern on a target by the lithography step; and using the first aspect, the second aspect, and the third aspect. The electron beam device of the fourth aspect, or the tenth aspect, cuts a line pattern constituting the line and the space pattern.

10‧‧‧Platform chamber

34‧‧‧The first vacuum chamber

50‧‧‧photoelectric capsule

52‧‧‧Body

54‧‧‧Photoelectric element

54a‧‧‧Photoelectric conversion surface

58‧‧‧Light-shielding film

58a‧‧‧light hole

58b‧‧‧light hole

60‧‧‧Photoelectric layer

62‧‧‧O-ring

64‧‧‧ cover member

66‧‧‧Vacuum corresponding actuator

68‧‧‧ cover storage board

68c‧‧‧round opening

70‧‧‧ electron beam optical system

72‧‧‧ 2nd vacuum chamber

82‧‧‧lighting system

82b‧‧‧forming optical system

84‧‧‧Pattern generator

84d‧‧‧ light receiving surface

86‧‧‧ projection optical system

86A ~ 86D‧‧‧Projection optical system

88‧‧‧laser diode

98‧‧‧Mirror

100‧‧‧ exposure device

102‧‧‧circuit board

102a‧‧‧ opening

110‧‧‧Main control device

112‧‧‧ lead-out electrode

134‧‧‧ substrate

136‧‧‧Photoelectric element

140‧‧‧Photoelectric element

142‧‧‧light hole component

144‧‧‧ substrate

182A, 182B‧‧‧ Illumination Optical System

182a‧‧‧Collimator Optical System

182b‧‧‧Optical Integrator

182ba‧‧‧wavefront segmentation elements

182c‧‧‧Fourier transform optical system

182d‧‧‧diffractive optical element

182e, 182f‧‧‧ wedge-shaped 稜鏡

182g

182h (182ha, 182hb) ‧‧‧ 1st aberration correction member

182j‧‧‧ Condensing Optical System

182k‧‧‧Second aberration correction member

AS‧‧‧ aperture diaphragm

AXi‧‧‧Optical axis

AXo‧‧‧Optical axis

EB‧‧‧ Electron Beam

LB‧‧‧laser beam

W‧‧‧ Wafer

WST‧‧‧Wafer Platform

FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus according to a first embodiment.

FIG. 2 is a perspective view showing a cross section of the electron beam optical unit of FIG. 1. FIG.

Fig. 3 shows a longitudinal section of the electron beam optical unit.

Figures 4 (A) ~ (C) are diagrams (1 to 3) for explaining the structure of the photovoltaic capsule and the order of mounting of the cover member to the body part in the photovoltaic capsule manufacturer's factory.

FIG. 5 is a diagram (part 1) for explaining a part of the assembling procedure of the electron beam optical unit.

FIG. 6 is a diagram (part 2) for explaining a part of the assembling procedure of the electron beam optical unit.

Fig. 7 is a diagram (part 3) for explaining a part of the assembling sequence of the electron beam optical unit.

FIG. 8 (A) is a longitudinal sectional view showing an omitted part of the photovoltaic element provided in the photovoltaic capsule, and FIG. 8 (B) is a plan view showing an omitted part of the photovoltaic element.

FIG. 9 is a plan view showing an omitted part of the lid storage plate.

FIG. 10 is a diagram showing a plurality of pattern projection devices in an optical unit together with an electron beam optical unit.

FIG. 11 (A) is a diagram showing the structure of a light irradiation device viewed from the + X direction, and FIG. 11 (B) is a diagram showing the structure of a light irradiation device viewed from the -Y direction.

FIG. 12 (A) is a perspective view showing a light diffraction type light valve, and FIG. 12 (B) is a side view showing the light diffraction type light valve.

Fig. 13 is a plan view showing a pattern generator.

FIG. 14 (A) is a diagram showing the configuration of the electron beam optical system viewed from the + X direction, and FIG. 14 (B) is a diagram showing the configuration of the electron beam optical system viewed from the -Y direction.

15 (A) to 15 (C) are diagrams for explaining the correction of the reduction magnifications in the X-axis direction and the Y-axis direction by the first electrostatic lens.

FIG. 16 is a perspective view showing the appearance of the 45 electron beam optical systems supported in a state of being suspended from a bottom plate.

FIG. 17 shows the irradiation area of the laser beam on the light receiving surface of the pattern generator, the irradiation area of the laser beam on the photoelectric element surface, and the irradiation area of the electron beam (exposure area on the image surface (wafer surface)) ).

FIG. 18 is a block diagram showing an input-output relationship of a main control device mainly constituting a control system of an exposure device.

FIG. 19 is a diagram for explaining the advantages of a rectangular field compared to a square field.

FIGS. 20 (A) and 20 (B) are diagrams for explaining correction of a shape change (rounding of four corners) of a cutting pattern due to blurring caused by an optical system and blurring of a resist.

21 (A) and 21 (B) are diagrams for explaining correction of distortion common to a plurality of electron beam optical systems.

Fig. 22 is a plan view showing an example of a pattern generator having a spare strip line.

FIG. 23 (A) and FIG. 23 (B) are diagrams for explaining a strip line for correction.

24 (A) to 24 (D) are diagrams showing configuration examples of various types of optical pattern forming units.

FIG. 25 (A) is an explanatory diagram showing a method in which a light hole is not used, and FIG. 25 (B) is an explanatory diagram showing a method in which a light hole is used.

FIG. 26 is a diagram schematically showing a configuration of an exposure apparatus according to a second embodiment.

Fig. 27 is a diagram showing the internal configuration of a casing corresponding to one electron beam optical system of the exposure apparatus of the second embodiment.

28 (A) to 28 (E) are diagrams showing various configuration examples of an optical-hole-integrated photovoltaic element.

FIG. 29 is a diagram for explaining a method of compensating the curvature of field of an aberration that the electron beam optical system has.

FIG. 30 is a diagram showing an example of a multi-pitch light-hole-integrated photoelectric element in which light-hole rows having different pitches are formed every other row.

FIGS. 31 (A) to 31 (C) are diagrams showing the order of cutting patterns for cutting using a light hole-integrated photovoltaic element of FIG. 30 to form line patterns with different pitches.

FIG. 32 (A) is a diagram for explaining an example of the configuration of a photocell with different body shapes, and FIGS. 32 (B) to 32 (E) are diagrams showing various configuration examples of a light aperture plate.

FIG. 33 is a diagram schematically showing a configuration of a projection optical system according to a first type configuration.

FIG. 34 is a diagram schematically showing a configuration of a projection optical system based on a second type of configuration.

FIG. 35 is a diagram explaining a case where coma aberration occurs in the first and second types of configurations.

FIG. 36 is a diagram illustrating a first method of correcting coma aberration in the first and second types of configurations.

FIG. 37 is a diagram illustrating a second method of correcting coma aberration in the first and second types of configurations.

FIG. 38 is a diagram schematically showing a configuration of a projection optical system based on a third type of configuration.

FIG. 39 is a diagram schematically showing a configuration of a projection optical system based on a fourth type of configuration.

FIG. 40 is a diagram schematically showing a basic configuration of an illumination optical system using a wavefront division type optical integrator.

FIG. 41 is a diagram schematically showing an illuminance distribution formed on an illuminated surface by the illumination optical system of FIG. 40.

Fig. 42 is a diagram schematically showing a basic configuration of an illumination optical system using a diffractive optical element.

FIG. 43 is a diagram for explaining defects that occur when the illuminated surface is not perpendicular to the optical axis in the illumination optical system shown in FIG. 40.

FIG. 44 is a diagram schematically showing a configuration example of using a wedge-shaped cymbal as a focusing point adjusting member in the illumination optical system shown in FIG. 40.

45 (a) and 45 (b) are diagrams explaining the operation of a right-angled triangular wedge-shaped ridge.

FIG. 46 is a diagram schematically showing a configuration example of using a step plate as a focusing point adjusting member.

FIG. 47 is a diagram schematically showing a configuration example of a focusing point adjusting member using a eccentrically-arranged Fourier conversion optical system.

FIG. 48 is a diagram illustrating a first aberration correction member that corrects aberrations caused by a wedge-shaped ridge.

FIG. 49 is a diagram explaining a second aberration correction member that corrects aberrations caused by the wedge-shaped ridge.

FIG. 50 is a diagram schematically showing a state where the projection optical systems of the first to third types are connected to the illumination optical system according to the V-bend type.

FIG. 51 is a diagram schematically showing a state where a projection optical system of a fourth type is connected to an illumination optical system according to a V-bend type.

FIG. 52 is a diagram schematically showing a state where the projection optical systems of the first to third types are connected to the illumination optical system according to the N-bend type.

FIG. 53 is a diagram schematically showing a state where the projection optical system of the fourth type and the illumination optical system are connected according to the N-bend type.

<< First Embodiment >>

Hereinafter, a first embodiment will be described based on FIGS. 1 to 25. FIG. 1 shows the configuration of the exposure apparatus 100 according to the first embodiment with probability. Since the exposure apparatus 100 includes a plurality of electron beam optical systems as described later, the following is to take the Z axis parallel to the optical axis of the electron beam optical system, and in a plane perpendicular to the Z axis, the wafer will be exposed at a later-described exposure time. The scanning direction of W movement is set to the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is set to the X-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are set to θx and θy, respectively. And the θz direction.

The exposure device 100 includes: a platform chamber 10 provided on the bottom surface F of the clean room; a platform system 14 arranged in the exposure chamber 12 inside the platform chamber 10; and an optical system 18 on the bottom surface F Supported on the frame 16 and disposed above the platform system 14.

Although the illustration of the platform chamber 10 at both ends in the X-axis direction is omitted in FIG. 1, it is a vacuum chamber capable of evacuating the inside of the platform chamber 10. The platform chamber 10 is provided with a bottom wall 10a disposed on the bottom surface F and parallel to the XY plane; the frame 16 also serves as an upper wall (ceiling wall) of the platform chamber 10; and a peripheral wall 10b (only shown in FIG. 1) One of the + Y side portions is shown), which not only surrounds the periphery of the bottom wall 10a, but also supports the frame 16 horizontally from below. Both the frame 16 and the bottom wall 10a are formed by a rectangular plate member in plan view, and a circular opening 16a is formed on the frame 16 near the center portion thereof. The appearance of the optical system 18 is a cylindrical 19-shaped electron beam optical unit 18A with a stepped second portion 19b having a smaller diameter and inserted into the opening 16a from above, and the first portion 19a having a larger diameter of the casing 19 The upper surface of the frame 16 supported around the opening 16a from below. Although not shown, the inner peripheral surface of the opening 16 a and the second portion 19 b of the housing 19 are sealed by a sealing member. A platform system 14 is disposed on the bottom wall 10 a of the platform chamber 10.

The platform system 14 includes a flat plate 22 supported on the bottom wall 10a via a plurality of vibration-proof members 20, and a wafer platform WST supported on the flat plate 22 on the weight canceling device 24, and can be used in the X-axis direction and the Y-axis. Move a predetermined stroke in the direction, for example, 50mm, and can move in the remaining 4 degrees of freedom directions (Z-axis, θx, θy, and θz directions); platform drive system 26 (only one of which is shown in FIG. 1) (Refer to FIG. 18), which drives the wafer platform WST; and a position measurement system 28 (not shown in FIG. 1, refer to FIG. 18), which measures the position information in six directions of freedom of the wafer platform WST. The wafer stage WST sucks and holds the wafer W through an electrostatic chuck (not shown) provided on the upper surface thereof.

As shown in FIG. 1, the wafer platform WST includes a rectangular frame-shaped member having an XZ cross section, and a magnetic track having a rectangular frame shape of a YZ cross section and magnets (not shown) are integrally fixed on the bottom surface of the inside (hollow portion). In the mover 30a of the motor 30, a stator 30b of the motor 30 formed by a coil unit extending in the Y-axis direction is inserted into the mover 30a (hollow portion). Both ends of the stator 30b in the longitudinal direction are connected to an X-platform (not shown) that moves on the flat plate 22 in the X-axis direction. The X stage uses an X-axis drive system 32 (see FIG. 18) constituted by a single-axis drive mechanism that does not generate magnetic flux leakage, such as a ball screw feed screw mechanism, and is integrated on the X-axis with the wafer stage WST. Driven in a predetermined stroke in the direction. In addition, the X-stage drive system 32 may be configured by a single-axis drive mechanism including an ultrasonic motor as a drive source. In any case, the influence of the magnetic field variation caused by the magnetic flux leakage on the positioning of the electron beam is a negligible level.

The motor 30 is a closed magnetic field type and a moving magnetic type motor, which can move the mover 30a with a predetermined stroke in the Y-axis direction relative to the stator 30b, for example, 50 mm, and can move in the X-axis direction, Z-axis direction, θx direction, Micro drive in θy and θz directions. In this embodiment, a wafer stage driving system that drives the wafer stage WST in six directions of freedom is constituted by the motor 30. Hereinafter, the wafer platform driving system is referred to as the wafer platform driving system 30 using the same symbol as the motor 30.

The above-mentioned platform driving system 26 is constituted by the X platform driving system 32 and the wafer platform driving system 30, which drives the wafer platform WST in the X-axis direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and Minimal drive in the remaining 4 degrees of freedom directions (Z-axis, θx, θy, and θz directions). The X platform driving system 32 and the wafer platform driving system 30 are controlled by the main control device 110 (see FIG. 18).

In a state of covering the upper surface of the motor 30 and both sides in the X-axis direction, an inverted U-shaped magnetic shielding member (not shown) in the XZ cross section is set between a pair of convex portions, and the pair of convex portions are provided in an unillustrated position. Both ends of the X platform shown in the X-axis direction are shown. This magnetic shielding member is inserted into the hollow portion of the wafer stage WST in a state that the movement of the mover 30a relative to the stator 30b is not hindered. The magnetic shielding member covers the entire length of the moving stroke of the mover 30a, covers the upper surface and sides of the motor 30, and is fixed on the X platform. Therefore, the entire range of the movement range of the wafer platform WST and the X platform can be roughly and reliably The magnetic flux is prevented from leaking upward (to be described later on the electron beam optical system side).

The weight canceling device 24 includes a metal bellows-type air spring (hereinafter abbreviated as an air spring) 24a whose upper end is connected to the lower surface of the wafer platform WST, and a base slider 24b which is connected to the lower end of the air spring 24a. It is formed by a plate-like plate member. The base slider 24b is provided with a bearing portion (not shown) that ejects the air inside the air spring 24a to the upper surface of the flat plate 22, and the bearing surface of the pressurized air ejected from the bearing portion and the flat plate 22 The static pressure (pressure in the gap) between the surfaces supports the weight of the weight cancellation device 24, the wafer platform WST (including the mover 30a), and the wafer W. In addition, compressed air is supplied to the air spring 24a via a pipe (not shown) connected to the wafer stage WST. The base slider 24b is supported on the flat plate 22 in a non-contact manner through a differential air-pumping type air static bearing to prevent air ejected from the bearing portion toward the flat plate 22 from leaking to the surroundings (exposure chamber). In addition, actually, on the bottom surface of the wafer platform WST, a pair of pillars sandwiching the air spring 24a in the Y-axis direction is provided, and a leaf spring provided at the lower end of the pillar is connected to the air spring 24a.

As described above, the optical system 18 includes the electron beam optical unit 18A held on the frame 16 and the optical unit 18B mounted on the electron beam optical unit 18A.

In FIG. 2, the cross section of the electron beam optical unit 18A is shown in a perspective view. 3 is a longitudinal sectional view of the electron beam optical unit 18A. As shown in these figures, the electron beam optical unit 18A includes a housing 19 having a first portion 19a on the upper side and a second portion 19b on the lower side.

As shown in FIG. 2, the first portion 19 a of the casing 19 is cylindrical with a low height. A first vacuum chamber 34 is formed inside the first portion 19a, as shown in, for example, FIGS. 1 and 3. As shown in FIG. 1 and the like, the first vacuum chamber 34 is divided by the following members: the first plate 36 is formed by a circular plate member constituting an upper wall (the ceiling wall) in a plan view; the second plate (hereinafter referred to as It is a bottom plate) 38 which includes a plate member having the same diameter as the first plate 36 and constitutes a bottom wall; and a cylindrical side wall portion 40 which surrounds the periphery of the first plate 36 and the bottom plate 38.

On the first plate 36, as shown in FIG. 3 and the like, a plurality of through holes 36a in a circular upward and downward direction are formed at predetermined intervals in the XY two-dimensional direction. Here, as an example, a matrix of 7 rows and 7 columns is used. There are 45 (= 7 × 7-4) pieces in the arrangement other than the four corners. As shown in FIG. 3, the 45 through-holes 36a are inserted into the body portion 52 of the photoelectric capsule described below from above with substantially no gap.

As shown in FIG. 4 (A) and FIG. 5, the photoelectric capsule 50 includes a main body portion 52 which is formed on one end surface (lower end surface in FIG. 4 (A)) with an opening 52c formed therein and a hollow portion 52b inside. The columnar shape is provided with a flange portion 52a at the other end (the upper end in FIG. 4 (A)); and a cover member 64 that can close the opening 52c. The hollow portion 52b is a hollow portion obtained by forming a circular hole with a predetermined depth from the lower end surface of the main body portion 52, and further forming a substantially conical concave portion on the bottom surface of the circular hole. The upper surface of the main body portion 52 including the flange portion 52a is a square in plan view, and the center of the square is consistent with the central axis of the hollow portion 52b. A photovoltaic element 54 is provided on the upper surface of the main body portion 52 at a central portion thereof. The photovoltaic element 54 is shown in a longitudinal sectional view of FIG. 8 (A) showing a part of the photovoltaic element 54 and includes a transparent plate member (such as quartz glass) 56 formed at the top of the body portion 52 that also serves as a vacuum barrier. Surface; light-shielding film (light aperture film) 58, which is, for example, vapor-deposited on the lower surface of the plate member 56 and formed of chromium; and a layer of an alkali photoelectric film (photoelectric conversion film) (alkali photoelectric conversion layer (alkali photoelectric layer) )) 60 is formed on the lower surface side of the plate member 56 and the light shielding film 58. A plurality of light holes 58 a are formed in the light shielding film 58. Although only a part of the photovoltaic element 54 is shown in FIG. 8 (A), a plurality of light holes 58a are actually formed on the light shielding film 58 in a predetermined positional relationship (see FIG. 8 (B)). The number of light holes 58a may be the same as the number of multi-beams described later, or may be more than the number of multi-beams. The alkali photoelectric layer 60 is also disposed inside the light hole 58 a. In the light hole 58 a, the plate member 56 is in contact with the alkali photoelectric layer 60. In this embodiment, the plate member 56, the light-shielding film 58, and the alkali photovoltaic layer 60 are integrally formed to form at least a part of the photovoltaic element 54.

The alkali photovoltaic layer 60 is a multi-alkali photocathode using two or more kinds of alkali metals. Multi-alkali photocathode is a photocathode with the following advantages: high durability, electrons can be generated by green light with a wavelength of 500 nm, and the quantum efficiency QE of the photoelectric effect is as high as about 10%. In the present embodiment, the alkali photoelectric layer 60 is used as an electron gun that generates an electron beam by the photoelectric effect of laser light, so a high-efficiency one having a conversion efficiency of 10 [mA / W] is used. In addition, in the photovoltaic element 54, the electron emission surface of the alkali photovoltaic layer 60 is the lower surface in FIG. 8 (A), that is, the surface opposite to the upper surface of the plate member 56.

On the lower end surface of the annular portion in the plan view of the body portion 52, as shown in FIG. 4 (A) and the like, a circular recess in the plan view of a predetermined depth is formed, and an O-ring 62 as a kind of sealing member is formed by A part is accommodated in the groove and installed in the groove.

The cover member 64 includes a circular plate member in a plan view similar to the outer peripheral edge (outline) of the lower end surface of the main body portion 52, and is removed in a vacuum as described later, but is attached to the main body portion 52 in a previous state. The open end of the main body portion 52 is closed (see FIG. 5). That is, the closed space (hollow portion 52 b) inside the main body portion 52 closed by the cover member 64 becomes a vacuum space. Therefore, the cover member 64 is crimped to the main body portion 52 by the atmospheric pressure acting on the cover member 64.

In addition, a series of processes in the transportation of a photovoltaic capsule manufactured by a manufacturer including a photovoltaic capsule until the exposure device manufacturer opens the cover member will be described in detail later.

Returning to the description of the electron beam optical unit 18A, as shown in FIG. 5, inside the first vacuum chamber 34, a pair of vacuum-compatible actuators 66 are housed in the X-axis, Y-axis, and Z-axis directions. A lid storage plate 68 driven in three directions. On the lid storage plate 68, as shown in FIG. 5, in a configuration corresponding to the configuration of 45 photoelectric capsules 50, 45 circular holes 68a of a predetermined depth are formed on the upper surface, and on the inner bottom surface of each circular hole 68a A circular through hole 68b is formed. In addition, the number of the circular holes 68 a may not be the same as the number of the photoelectric capsules 50. In addition, instead of providing the circular hole 68a, the cover member 64 may be supported by the cover storage plate 68.

On the cover storage plate 68, as shown in FIG. 9 in which a plan view of a part of the cover storage plate 68 is omitted, as shown in FIG. 9, a light path that eventually becomes an electron beam is formed between the circular hole 68a and the circular hole 68a (also referred to as an electron beam). Opening) 68c. In addition, if the cover storage plate 68 can avoid the path of the electron beam, the opening 68c may not be provided.

On the bottom plate 38, as shown in FIG. 3 and the like, 45 recesses 38a having a predetermined depth are formed on the central axes of the body portions 52 of the 45 photoelectric capsules 50, respectively. The recessed portions 38 a have a predetermined depth from the upper surface of the bottom plate 38 to the lower surface, and a through hole 38 b functioning as a flow restricting portion is formed on the inner bottom surface of the recessed portions 38 a. Hereinafter, the through hole 38b is also referred to as a flow restricting portion 38b. The flow restriction section 38b will be further described below.

On the lower surface of the bottom plate 38, 45 electron beam optical systems 70 are fixed in a suspended state, and their optical axes AXe are located on the central axes of the body portions 52 of the 45 photoelectric capsules 50, respectively. In addition, the support of the electron beam optical system 70 is not limited to this. For example, a support member different from the base plate 38 can be used to support 45 electron beam optical systems 70, and the support member is supported by the second part 19b of the casing 19 . The electron beam optical system 70 will be described in detail later.

The second portion 19b of the casing 19 is as shown in Figs. 1 and 2, and its appearance is a cylindrical shape having a diameter smaller than that of the first portion and a few heights. Inside the second portion 19b, a second vacuum chamber 72 (refer to FIGS. 1 and 3) is formed in which 45 electron beam optical systems 70 are housed. As shown in Figs. 1 and 2, the second vacuum chamber 72 is divided by the above-mentioned bottom plate 38, which constitutes the upper wall (ceiling wall), and a circular thin plate-shaped cooling plate 74, which constitutes the bottom wall, in plan view; The cylindrical peripheral wall portion 76 has an outer diameter substantially the same as the diameter of the cooling plate 74 and is fixed to the lower end surface of the cooling plate 74. The upper surface of the peripheral wall portion 76 is fixed to the lower surface of the bottom plate 38, and the first portion 19 a and the second portion 19 b are integrated to form the casing 19. In addition to the cooling function, the cooling plate 74 also has a function of suppressing fogging which will be described later.

Each of the first vacuum chamber 34 and the second vacuum chamber 72 can be evacuated (see a hollow arrow in FIG. 2). In addition, a second vacuum pump for evacuating the second vacuum chamber 72 may be provided separately from the first vacuum pump for evacuating the first vacuum chamber 34. Alternatively, the first vacuum chamber 34 and the first vacuum chamber 34 may be evacuated using a common vacuum pump. 2 The vacuum chamber 72 is evacuated. The degree of vacuum in the first vacuum chamber 34 and the degree of vacuum in the second vacuum chamber 72 may be different. For maintenance and the like, one of the first vacuum chamber 34 and the second vacuum chamber 72 may be an atmospheric pressure space, and the other may be a vacuum space. In this embodiment, the current-restricting portion 38b may be provided to make the degree of vacuum of the first vacuum chamber 34 different from that of the second vacuum chamber 72, but the first vacuum chamber 32 and The second vacuum chamber 72 substantially becomes a single vacuum chamber.

As shown in FIG. 1, the optical unit 18B includes a lens barrel (chassis) 78 mounted on the electron beam optical unit 18A, and 45 light irradiation devices (also referred to as optical systems) 80 stored in the lens barrel. Within 78. The 45 light irradiation devices 80 are arranged in the XY plane in an arrangement corresponding to each of the body portions 52 of the 45 photoelectric capsules 50. The inside of the lens barrel 78 is an atmospheric pressure space.

The 45 light irradiation devices 80 are provided corresponding to the 45 photoelectric capsules 50 (photoelectric elements 54). At least one light beam from the light irradiation device 80 is irradiated to the alkali photoelectric layer through the light hole 58a of the photoelectric element 54 (hereinafter referred to as photoelectricity). Layer) 60. In addition, the number of the light irradiation devices 80 and the number of the photocapsules 50 may be different.

The 45 light irradiating devices 80 each have an illumination system 82, a pattern generator 84 that generates patterned light, and a projection optical system 86, as shown in FIG. 10, for example. The pattern generator 84 may also be referred to as a spatial light modulator, which modulates and emits the amplitude, phase, and state of polarized light of a light traveling in a predetermined direction. The pattern generator 84 may generate an optical pattern including, for example, a light and dark pattern.

In FIGS. 11 (A) and 11 (B), an example of the configuration of the light irradiation device 80 is shown together with the corresponding body portion 52 of the photoelectric capsule 50. Among them, Fig. 11 (A) constitutes a structure viewed from the + X direction, and Fig. 11 (B) constitutes a structure viewed from the -Y direction. As shown in FIGS. 11 (A) and 11 (B), the lighting system 82 includes a light source unit 82a that generates illumination light (laser light) LB, and a shaping optical system 82b that shapes the illumination light LB into 1 or 2 More than a rectangular beam with a long cross section in the X-axis direction.

The light source unit 82a includes a laser diode 88 that continuously oscillates visible light or nearby wavelengths, such as 365 nm, of laser light as a light source; and an AO (acoustooptic, acousto-optic) deflector (also known as AOD (acoustooptic modulator) , Acousto-optic modulation element) or light deflection element) 90, which is arranged on the optical path of the laser light. Here, the AO deflector 90 functions as a switching element for intermittently emitting laser light. That is, the light source section 82a is a light source section that can emit laser light (laser beam) LB having a wavelength of 365 nm intermittently. In addition, the operating ratio of the light emission of the light source section 82a can be changed, for example, by controlling the AO polarizer 90. The switching element is not limited to an AO polarizer, and may also be an AOM (Acoustooptic Modulation Element). In addition, the laser diode 88 itself may be caused to emit light intermittently.

The shaping optical system 82b includes: a diffractive optical element (also referred to as DOE) 92, which is sequentially arranged on the light path of the laser beam (hereinafter, appropriately referred to as a beam) LB from the light source section 82a; and The illuminance distribution adjusting element 94 and the condenser lens 96.

When the diffractive optical element 92 is incident on a laser beam from the AO deflector 90, the laser beam is distributed on a predetermined surface on the exit surface side of the diffractive optical element 92 in such a manner that it is distributed on the Y axis A distribution of large light intensities in a plurality of rectangular (long and narrow slit-shaped) regions that are long in the X-axis direction, arranged at predetermined intervals in the direction, to convert the in-plane intensity distribution of the laser beam . In this embodiment, the diffractive optical element 92 is generated by a plurality of rectangular cross-sections that are long in the X-axis direction and arranged in a predetermined interval in the Y-axis direction by the incidence of a laser beam from the AO deflector 90. Beam (slit beam). In this embodiment, as will be described in detail later, slit-shaped beams of the number corresponding to the configuration of the pattern generator 84 are generated. In addition, the element that converts the in-plane intensity distribution of the laser beam is not limited to a diffractive optical element, and may be a refractive optical element or a reflective optical element, or a spatial light modulator.

When the plurality of beams are irradiated to the pattern generator 84, the illuminance distribution adjusting element 94 can individually adjust the illuminance for each of the divided regions in each divided region where the light receiving surface of the pattern generator 84 is divided into a plurality of divided regions . In this embodiment, the illuminance distribution adjustment element 94 is a crystal which has a non-linear optical effect in which the refractive index changes with an applied voltage, such as lithium tantalate (lithium tantalate (abbreviation: LT)). (Single crystal) is arranged in a plane parallel to a plurality of XY planes, and a polarizing element is arranged on the incidence side and the emission side. In this embodiment, as shown schematically in a circle in FIG. 11 (A), as an example, 24 lithium tantalates are arranged in an XY plane at a pitch of 1 mm, for example, in a matrix of 2 columns and 12 rows. Illuminance distribution adjustment element 94 of crystal 94a. Reference numeral 94b denotes an electrode. According to the illuminance distribution adjusting element 94 of this configuration, the polarizing element on the exit side passes only a predetermined polarizing component, so the polarization state of the light incident on the crystal is changed by passing through the polarizing element on the incident side, for example, from linear polarized light to Circularly polarized light can change the intensity of light emitted from a polarizing element on the exit side. In this case, the change in the polarization state can be changed by controlling the voltage applied to the crystal. Therefore, by controlling the voltage applied to each crystal, the illuminance of each region corresponding to each crystal (the region surrounded by the two-dot chain line in FIG. 13) can be adjusted (see FIG. 11 (A)). The illuminance distribution adjustment element 94 is not limited to lithium tantalate, and may be configured using other light intensity-modulated crystals (electro-optical elements) such as lithium niobate (lithium niobate (abbreviation: LN) single crystal). In addition, when the pattern generator 84 or an optical member disposed between the pattern generator 84 and the photoelectric element 54 can be used to adjust the intensity of at least one light beam irradiated onto the photoelectric element 54, the illumination distribution may not be set. Adjusting element 94. In addition, as the illuminance distribution adjusting element 94, a spatial light modulator that spatially modulates the amplitude, phase, and state of polarized light emitted can be used. An example is a transmissive liquid crystal element or a reflective liquid crystal element. .

In this embodiment, as described later, a reflective spatial light modulator is used as the pattern generator 84. Therefore, a light path bending mirror 98 is disposed on the light exit side under the condenser lens 96. The condenser lens 96 condenses a plurality of rectangular (slit-shaped) beams generated in the diffractive optical element 92 with respect to the Y-axis direction and irradiates the mirror 98. The condensing lens 96 can be, for example, a cylindrical lens that is long in the X-axis direction. The condenser lens 96 may be composed of a plurality of lenses. Instead of the condenser lens, a reflective optical member such as a condenser lens or a diffractive optical element may be used. The mirror 98 is not limited to a flat mirror, and may have a shape having a curvature. When the mirror 98 has a curvature (having a limited focal distance), the function of the condenser lens 96 can also be used.

The mirror 98 is arranged at a predetermined angle with respect to the XY plane, and reflects a plurality of slit-shaped beams to be irradiated in a diagonally upward left direction in FIG. 11 (A).

The pattern generator 84 is arranged on the reflected light path of a plurality of slit-shaped beams reflected by the mirror 98. To explain in detail, the pattern generator 84 is disposed on the surface of the -Z side of the circuit substrate 102 disposed between the condenser lens 96 and the mirror 98 with respect to the Z-axis direction. Here, as shown in FIG. 11 (A), on the circuit substrate 102, an opening 102a is formed, which is an optical path of a plurality of slit-shaped beams from the condenser lens 96 toward the mirror 98.

In the present embodiment, the pattern generator 84 is composed of a light-diffraction type light valve (GLV (registered trademark)), which is a type of programmable spatial light modulator. As shown in FIG. 12 (A) and FIG. 12 (B), a light diffraction type light valve GLV is formed on a silicon substrate (wafer) 84a with thousands of silicon nitrides called "stripes". Spatial light modulator of a film microstructure (hereinafter referred to as a strip) 84b.

The driving principle of GLV is as follows.

By flexing the electrical control strip 84b, the GLV functions as a programmable diffraction grating, which can perform dimming and dimming with high resolution, high speed (response 250kHz ~ 1MHz), and high accuracy. Change, laser light switch. GLV is classified as a Micro-Electro-Mechanical System (MEMS). The strip 84b is made of an amorphous silicon nitride film (Si ₃ N ₄ ), which is one of high-temperature ceramics having firm characteristics in terms of hardness, durability, and chemical stability. Each strip has a width of 2 to 4 μm and a length of 100 to 300 μm. The strip 84b is covered with an aluminum film, and functions as both a reflective plate and an electrode. The stripe stretches across the common electrode 84c, and when a control voltage is supplied to the stripe 84b by a driver (not shown in FIGS. 12 (A) and 12 (B)), the stripe 84b is deflected by static electricity. When the control voltage disappears, the strip 84b is restored to its original state by the high tension inherent in the silicon nitride film. That is, the strip 84b is a type of movable reflective element.

In GLV, there are: active strips whose position changes with the application of voltage, and alternately arranged types of bias strips which fall to the bottom without changing the position; and all types of active strips, but the latter is used in this embodiment Its type.

In this embodiment, in a state in which the strip 84b is located on the -Z side and the silicon substrate 84a is located on the + Z side, a surface of the -Z side of the circuit substrate 102 shown in FIG. 11 (A) and the like is mounted with a GLV Formed pattern generator 84. A CMOS (Complementary Metal Oxide Semiconductor) driver (not shown) for supplying a control voltage to the stripe 84b is provided on the circuit substrate 102. In the following description, a CMOS driver is referred to as a pattern generator 84 for convenience.

The pattern generator 84 used in this embodiment is shown in FIG. 13. For example, a strip line 85 having 6000 strips 84 b has its long side direction (the arrangement direction of the strips 84 b) set to the X-axis direction. For example, 12 rows are formed on the silicon substrate at predetermined intervals in the Y-axis direction. The strip 84b of each strip row 85 extends over the common electrode. In this embodiment, by applying and releasing a certain level of voltage, each band 84b is driven mainly for switching (on, off) of the laser light. However, the GLV can adjust the intensity of the diffracted light according to the applied voltage. Therefore, when the intensity of at least a part of the plurality of beams from the pattern generator 84 must be adjusted as described later, the applied voltage is finely adjusted. . For example, in the case where light of the same intensity is incident on each strip, a plurality of light beams having different intensities may be generated by the pattern generator 84.

In the present embodiment, twelve slit-shaped beams are generated in the diffractive optical element 92, and the twelve beams are applied to each strip via the illumination distribution adjusting element 94a, the condenser lens 96, and the mirror 98. The center of 85 is irradiated with a long slit-shaped beam LB in the X-axis direction. In this embodiment, the irradiation area of the beam LB with respect to each of the strips 84b becomes a square area. In addition, the irradiation area of the beam LB to each of the strips 84b may not be a square area. It may be a rectangular region that is long in the X-axis direction or long in the Y-axis direction. In this embodiment, the irradiation area of the 12 beams on the light-receiving surface of the pattern generator 84 (the irradiation area of the illumination system 82) can also be referred to as the length in the X-axis direction and the length in the Y-axis direction is T mm The rectangular area.

Since each strip 84b can be controlled independently, the number of beams with a square cross section generated in the pattern generator 84 is 6000 × 12 = 72000, and 72,000 beams can be switched (on and off). In this embodiment, 72,000 light holes 58a are formed in the light shielding film 58 of the photoelectric element 54 of the photoelectric capsule 50 so that 72,000 beams generated by the pattern generator 84 can be individually irradiated. In addition, the number of light holes 58a may be different from, for example, the number of beams that can be irradiated by the pattern generator 84. For the photoelectric elements 54 (light-shielding film 58) of the light holes 58a corresponding to 72,000 beams (laser beams), respectively ) On the area. That is, the size of each of the plurality of light holes 58a in the photoelectric element 54 may be smaller than the size of the cross section of the corresponding beam. In addition, the number of movable elements (strips 84b) included in the pattern generator 84 and the number of beams generated in the pattern generator 84 may be different. For example, it is possible to use a type in which active strips whose positions change by the application of voltage, and bias strips whose positions fall to the bottom without changing the position are alternately arranged, and are performed by a plurality of (2) movable elements (stripes). Switching of 1 beam. In addition, the number of the pattern generators 84 and the number of the photocapsules 50 may be different.

As shown in FIGS. 11 (A) and 11 (B), the projection optical system 86 has an objective lens including lenses 86a and 86b which are sequentially arranged on the optical path of the light beam from the pattern generator 84. An optical filter 86c is disposed between the lens 86a and the lens 86b. The projection magnification of the projection optical system 86 is, for example, about 1/4. Hereinafter, although the light hole 58a is rectangular, it may be a square, and other shapes, such as a polygon and an ellipse, may be sufficient. Here, each of the lenses 86a and 86b may include a plurality of lenses, respectively. The projection optical system is not limited to a refractive optical system, and may be a reflective optical system or a reflective optical system.

In this embodiment, the projection optical system 86 projects light from the pattern generator 84 onto the photoelectric element 54, and then irradiates the light beam from at least one of a plurality of 72,000 light holes 58 a here. 60 on. That is, the beam set to be turned on from the pattern generator 84 is irradiated onto the photoelectric layer 60 through the corresponding light hole 58a, and the beam set to be turned off is not irradiated on the corresponding light hole 58a and the photoelectric layer 60. . In addition, when the image of the light from the pattern generator 84 is, for example, imaged on the photoelectric layer 60 (the lower surface of the plate member 56 or the near surface thereof), the projection optical system 86 may be referred to as an imaging optical system.

As shown in FIG. 10, the projection optical system 86 is provided with an optical characteristic adjustment device 87 capable of adjusting the optical characteristics of the projection optical system 86. The optical characteristic adjusting device 87 can change a projection magnification (magnification) of at least the X-axis direction by moving a part of the optical elements such as the lens 86a constituting the projection optical system 86 in this embodiment. As the optical characteristic adjusting device 87, for example, a device that changes the air pressure of an airtight space formed between a plurality of lenses constituting the projection optical system 86 can be used. As the optical characteristic adjusting device 87, a device that deforms an optical member constituting the projection optical system 86 or a device that imparts a heat distribution to the optical member constituting the projection optical system 86 may be used. Although FIG. 10 shows that only one optical irradiation device 80 is provided in parallel in one of the light irradiation devices 80 in the figure, in reality, the optical characteristic adjustment device is provided in parallel in all of the 45 light irradiation devices 80. 87. Forty-five optical characteristic adjustment devices 87 are controlled by the control unit 11 based on an instruction from the main control device 110 (see FIG. 18).

In addition, an intensity modulation element that can change the intensity of at least one of the plurality of beams generated by the pattern generator 84 and irradiated onto the photoelectric layer 60 may be provided inside the projection optical system 86. Changing the intensity of the plurality of beams irradiated to the photoelectric layer 60 includes making the intensity of a part of the plurality of beams zero. In addition, the projection optical system 86 may be provided with a phase modulation element, a polarization modulation element, and the like that can change the phase or polarization of at least one of the plurality of beams irradiated onto the photoelectric layer 60.

As clearly shown in FIG. 11 (A), in this embodiment, the optical axis AXi of the optical system of the lighting system 82 and the optical axis of the projection optical system 86 (the same as the optical axis of the lens 86b as the final optical element) AXo It is parallel to the Z axis, but shifted by a predetermined distance (deviation) in the Y axis direction. In addition, the optical axis AXi of the optical system included in the illumination system 82 and the optical axis AXo of the projection optical system may not be parallel.

An example of the configuration of the electron beam optical system 70 in Figs. 14 (A) and 14 (B) is shown together with the corresponding body portion 52 of the photoelectric capsule 50. Among them, Fig. 14 (A) shows the structure viewed from the + X direction, and Fig. 14 (B) shows the structure viewed from the -Y direction. As shown in FIGS. 14 (A) and 14 (B), the electron beam optical system 70 includes: a lens barrel 104; an objective lens formed by a pair of electromagnetic lenses 70a and 70b held on the lens barrel 104; and an electrostatic multipole 70c. The objective lens of the electron beam optical system 70 and the electrostatic multipole 70c are electrons (a plurality of electron beams EB) emitted by the photoelectric conversion of the photoelectric element 54 by irradiating a plurality of beams LB onto the photoelectric element 54. Beam path. The pair of electromagnetic lenses 70 a and 70 b are respectively disposed near the upper end portion and the lower end portion in the lens barrel 104, and the two are separated with respect to the vertical direction. An electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b. The electrostatic multipole 70c is disposed at a waist portion of the beam path of the electron beam EB that is contracted by the objective lens. Therefore, the plurality of beams EB passing through the electrostatic multipole 70c repel each other by the Coulomb force acting on each other, and the magnification changes.

Accordingly, in this embodiment, the electron beam optical system provided inside 70 of the electrostatic multipole 70c, having: XY magnification correction of the first use of _an electrostatic lens 70c; and controlling the irradiation position of the beam (and the irradiation position shift (Correction), that is, the second electrostatic lens 70c _{2 for} adjusting the projection position of the optical pattern (and correcting the projection position shift). The first electrostatic lens system 70c as _an example, FIG. 15 (A) schematically represents a high speed, and corrects the respective X-axis direction and the Y-axis direction of the reduction ratio. However, _one of the first electrostatic lens 70c in FIG. 15 (B), the magnification change caused by the Coulomb effect with the change of the total current amount generated as the correction target, FIG. 15 (C) shown by the local of The change of bias magnification caused by the sexual Coulomb effect is not the object of correction. Based on the premise that a pattern generation rule that does not cause a change in magnification as shown in FIG. 15 (C) is used as much as possible, the first electrostatic lens 70c _{1 is} used to correct the Coulomb effect generated thereon.

In addition, the second electrostatic lens 70c ₂ collectively corrects a shift in the irradiation position of the beam due to various vibrations and the like (a bright pixel in an optical pattern, that is, a projection position shift in a cutting pattern described later). The second electrostatic lens 70c _{2 is} also used to control the deflection of the beam when the beam follows the wafer W during the exposure control, that is, to control the irradiation position of the beam. In addition, in the case of using a part other than the electron beam optical system 70, such as the above-mentioned projection optical system 86, to perform reduction magnification correction, etc., instead of the electrostatic multipole 70c, the static electricity that can control the deflection of the electron beam may be used. The static electricity formed by the lens is deflected towards the lens.

The reduction ratio of the electron beam optical system 70 is designed to be 1/50, for example, in a state where no correction of the ratio is performed. It can also be 1/30, 1/20 and other magnifications.

FIG. 16 is a perspective view showing the appearance of the 45 electron beam optical systems 70 supported on the bottom plate 38 in a suspended state.

As shown in FIGS. 14 (A) and 14 (B), an exit 104a of an electron beam is formed at the exit end of the lens barrel 104, and a reflected electron detection device 106 is arranged below the exit 104a portion. The reflected electron detection device 106 is disposed inside a circular (or rectangular) opening 74a formed by the cooling plate 74 facing the outlet 104a. More specifically, the optical axis AXe of the electron beam optical system 70 (which coincides with the central axis of the above-mentioned photoelectric capsule 50 and the optical axis AXo of the projection optical system 86 (see FIG. 11 (A))) is held in the X-axis direction. A pair of reflective electronic detection devices 106 _x1 and 106 _x2 are provided on both sides. A pair of reflected electron detection devices 106 _y1 and 106 _y2 are provided on both sides in the Y-axis direction while sandwiching the optical axis AXe. In addition, the above-mentioned two pairs of reflected electron detection devices 106 are each constituted by, for example, a semiconductor detector, and are used to detect reflection components generated by an alignment mark or a reference mark on a wafer such as a detection target mark. Here, the reflected electrons are detected. The detection signal corresponding to the detected reflected electrons is transmitted to the signal processing device 108 (see FIG. 18). The signal processing device 108 performs signal processing after amplifying the detection signals of the plurality of reflected electronic detection devices 106 by an amplifier (not shown), and sends the processing results to the main control device 110 (see FIG. 18). In addition, the reflection electron detection device 106 may be provided only on a part (at least one) of the 45 electron beam optical systems 70 or may not be provided.

The reflection electronic detection devices 106 _x1 , 106 _x2 , 106 _y1 , and 106 _y2 can be fixed on the lens barrel 104 or can be mounted on the cooling plate 74.

On the cooling plate 74, 45 openings 74a are formed opposite to the outlets 104a of the lens barrels 104 of the 45 electron beam optical systems 70, and two pairs of reflection electron detection devices 106 are arranged in the openings 74a (see FIG. 2). As shown in FIGS. 14 (A) and 14 (B), the above-mentioned current limiting portion 38b is formed on the bottom plate 38 on the optical axis AXe. The flow restricting portion 38 b is formed by a long rectangular hole in the X-axis direction, and is formed on the inner bottom surface of the circular (or rectangular) concave portion 38 a formed in a predetermined depth on the upper surface of the bottom plate 38. In addition, on the optical axis AXe, the centers of the arrangement regions of the plurality of light holes 58a provided on the upper side of the photoelectric layer 60 (here, the central axis of the main body portion 52 of the photoelectric capsule 50 is substantially the same). As shown in FIG. 2, the current limiting portions 38 b are formed on the base plate 38 so as to face the optical axes AXe of the 45 electron beam optical systems 70 respectively.

An extraction electrode 112 is disposed between the base plate 38 and the photovoltaic element 54 to accelerate electrons emitted from the photovoltaic layer 60. In addition, although the illustration is omitted in FIGS. 14 (A) and 14 (B), the lead-out electrode 112 may be provided around the circular opening 68c of the lid storage plate 68, for example. Of course, the lead-out electrode 112 and the cover storage plate 68 may be provided separately from each other.

In the exposure apparatus 100, the lens barrel 78, the first portion 19a, the second portion 19b of the casing 19, and the platform chamber 10 are provided with opening and closing portions for maintenance.

Here, an example of a process of assembling the exposure apparatus 100 will be described focusing on a series of processes of transporting the photoelectric capsules manufactured by the photovoltaic capsule manufacturer and opening the cover member in the exposure apparatus manufacturer.

First, in the vacuum chamber 120 of the factory of the photovoltaic capsule manufacturer, as shown by the upward hollow arrow in FIG. 4 (A), the cover member 64 moves upward to block the opening 52c, so that the cover member 64 and the photovoltaic device The body portion 52 of the capsule 50 is in contact. Next, as shown in FIG. 4 (B), a spring and other urging members 122 are used in the vacuum chamber 120 to apply upward force (pressurization) to the cover member 64. At this time, the O-ring 62 provided on the lower end surface of the main body portion 52 is completely squeezed by the action of pressure. When the lid member 64 is pressurized, the inside of the vacuum chamber 120 is opened to the atmosphere. Since the inside of the photocapsule 50 is vacuum, the lid member 64 is crimped to the main body portion 52 by atmospheric pressure. on. The pressure of the urging member 122 is released. FIG. 4 (C) shows a state where the pressure is released. In the state of FIG. 4 (C), the main body portion 52 and the cover member 64 are integrated to form a photovoltaic capsule 50 (the photovoltaic capsule 50 is shielded at atmospheric pressure). As described above, a plurality of (at least 45) photoelectric capsules 50 are transported to a factory of an exposure device manufacturer while maintaining the state shown in FIG. 4 (C). In addition, a ring-shaped groove may be formed on a surface of the cover member 64 facing the main body portion 52, and a part of the O-ring 62 may be installed in the groove. In addition, in a state where the lid member 64 is in contact with the main body portion 52, if the vacuum state of the space inside the photoelectric capsule can be maintained in the atmospheric space, a sealing member such as an O-ring 62 may not be provided.

Each of the 45 through-holes 36a formed on the first plate 36 of the electron beam optical unit 18A that has been transported to a clean room and assembled on the frame 16 in the factory of the exposure device manufacturer, as shown in FIG. 5 The lower arrow indicates that 45 photoelectric capsules 50 are inserted from above and assembled on the first plate 36. In this assembled state, the body portion 52 of the photoelectric capsule 50 is inserted into the 45 through-holes 36a in a substantially gap-free state. At this time, the 45 circular holes 68a of the predetermined depth of the lid storage plate 68 are located directly below the 45 photoelectric capsules 50, respectively, and at a height where a predetermined gap exists between the lid member 64 and the upper surface of the lid storage plate 68. position.

In addition, before assembling the electron beam optical unit 18A to the frame 16, the platform system 14 is assembled, the assembled platform system 14 is moved into the platform chamber 10, and necessary adjustments related to the platform system 14 are performed.

After the photocapsule 50 is assembled to the first plate 36, the vacuum corresponding actuator 66 is used, as shown in FIG. 6, to drive the lid storage plate 68 above until a portion of the lid member 64 enters the 45 predetermined depths of the lid storage plate 68. Up to the position inside the round hole 68a.

Next, the inside of the first portion 19a and the inside of the second portion 19b of the casing 19 are simultaneously evacuated (see FIG. 2). At the same time, the inside of the platform chamber 10 is evacuated.

At this time, the inside of the first portion 19a of the casing 19 is evacuated until it reaches a high vacuum state at the same level as the inside of the photoelectric capsule 50, and the inside of the first portion 19a becomes the first vacuum chamber 34 (see FIG. 7). At this time, since the air pressure inside the photoelectric capsule 50 matches the air pressure inside (the inside of the first part 19a), as shown in FIG. 7, the cover member 64 is separated from the body portion 52 by its own weight, and is completely accommodated in the round hole. 68a inside. In addition, in a state in which the inside of the first portion 19a of the casing 19 has been evacuated, the photoelectric elements 54 each of the plurality of photoelectric capsules 50 serve as the first vacuum chamber 34 and its outside (the outside of the casing 19). The partition wall (vacuum partition wall) separated by space functions. The outside of the first vacuum chamber 34 is at atmospheric pressure, or the atmospheric pressure is slightly positive.

On the other hand, the inside of the second part 19b of the casing 19 may be evacuated until it reaches a high vacuum state at the same level as the first part 19a, but it may be evacuated until it becomes more than the first part 19a. The vacuum level is low until the vacuum level is high (high pressure). In this embodiment, since the inside of the first portion 19a and the inside of the second portion 19b can be substantially isolated by the current limiting portion 38b, the above operations can be performed. After the evacuation inside the second portion 19b is completed, the inside of the second portion 19a becomes the second vacuum chamber 72. When the inside of the second part 19b is evacuated to a medium vacuum state, the time required for evacuating can be shortened. The inside of the platform chamber 10 is evacuated at the same level as the inside of the second part 19b.

After the evacuation of the first part 19b is completed, the lid storage plate 68 is driven in the XY plane (and the Z axis direction) by the vacuum corresponding actuator 66, and 45 circular openings 68c formed on the lid storage plate 68 are respectively It is positioned on the optical axis AXe of the 45 electron beam optical systems 70. FIG. 3 shows a state where the circular opening 68c is positioned on the optical axis AXe as described above. Then, the required adjustment is performed, and the assembly of the electron beam optical unit 18A is completed.

Next, as shown in FIG. 1, an optical unit 18B which is separately assembled in advance is mounted on the assembled electron beam optical unit 18A (the first plate 36). At this time, the optical unit 18B is arranged in such a manner that the 45 light irradiation devices 80 inside the lens barrel 78 correspond to each of the 45 photoelectric elements 54, namely, the optical axis AXo of the projection optical system 86 and the electron beam. The optical system 70 is mounted in a state where the optical axes AXe are substantially uniform. In addition, make necessary adjustments related to the optical unit 18B and necessary adjustments between the electron beam optical unit 18A and the optical unit 18B, and the mechanical connection between the optical unit 18B and the electron beam optical unit 18A, wiring connections of the circuit, and air pressure. The piping connection of the circuit, etc., completes the assembly of the exposure device 100.

In addition, the necessary adjustments of the aforementioned sections include: adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and adjustments to achieve electrical accuracy for various electrical systems.

As is clear from the description so far, as shown in FIG. 17, in the exposure apparatus 100 according to this embodiment, during exposure, the length of the X-axis direction on the light-receiving surface of the pattern generator 84 is S mm and the Y-axis direction. The internally irradiated beam of a rectangular region having a length of T mm is irradiated with the light from the pattern generator 84 through the projection optical system 86 having a reduction magnification of 1/4 to the photovoltaic element 54 and further by the irradiation. The generated electron beam is irradiated to a rectangular area (exposure field) on an image plane (a wafer surface aligned with the image plane) through an electron beam optical system 70 having a reduction ratio of 1/50. That is, the exposure apparatus 100 according to this embodiment includes a light irradiation device 80 (projection optical system 86), a corresponding photoelectric element 54, a corresponding electron beam optical system 70, and a reflected electron detection device 106. The straight multi-beam optical system 200 (see FIG. 18) with a reduction magnification of 1/200 has 45 such multi-beam optical systems 200 in the above-mentioned matrix configuration in the XY plane. Therefore, the optical system of the exposure apparatus 100 of this embodiment is a multi-row electron beam optical system having 45 reduction optical systems with a reduction magnification of 1/200.

In the exposure apparatus 100, a 300-mm-diameter 300-mm wafer is used as an exposure target, and 45 electron beam optical systems 70 are arranged opposite to the wafer. Therefore, the optical axis AXe of the electron beam optical system 70 is arranged at intervals. 43 mm is taken as an example. In this way, the exposure area under the responsibility of one electron beam optical system 70 becomes a rectangular area with a maximum size of 43 mm × 43 mm. Therefore, as described above, the movement stroke of the wafer stage WST in the X-axis direction and the Y-axis direction is 50 mm. Is sufficient. In addition, the number of the electro-optical systems 70 is not limited to 45, and can be determined based on the diameter of the wafer, the stroke of the wafer stage WST, and the like.

In FIG. 18, the input-output relationship of the main control device 110 mainly constituting the control system of the exposure device 100 is shown in a block diagram. The main control device 110 includes a microcomputer and the like, and collectively controls the components of the exposure device 100 including the components shown in FIG. 18. In FIG. 18, the light irradiation device 80 connected to the control section 11 includes a laser diode 88 controlled by the control section 11 based on an instruction from the main control device 110, an AO deflector 90, a diffractive optical element 92, And an illumination distribution adjustment element 94. The electron beam optical system 70 connected to the control unit 11 includes a pair of electromagnetic lenses 70a and 70b and an electrostatic multipole 70c (first electrostatic lens 70c ₁ ) controlled by the control unit 11 based on an instruction from the main control device 110. And the second electrostatic lens 70c ₂ ). In FIG. 18, reference numeral 500 denotes an exposure unit including the above-described multi-beam optical system 200, the control unit 11, and the signal processing device 108. The exposure apparatus 100 is provided with 45 exposure units 500.

However, in the exposure apparatus 100, a rectangular (rectangular) exposure field is used instead of a square for reasons described below.

In FIG. 19, a square field SF and a rectangular field RF are shown in a circle representing an effective area (aberration effective area) of the diameter D of the electron beam optical system. As clearly shown in FIG. 19, if the effective area of the electron beam optical system is to be used to the maximum, the square field SF is preferable. However, in the case of a square field SF, as shown in FIG. 19, the field amplitude is lost by about 30% (1 / √2). For example, in the case of a rectangular field RF having an aspect ratio of 60:11, the effective area is approximately the field width. This becomes a big advantage in multiple columns. In addition, there is an advantage that the mark detection sensitivity is improved when the alignment mark is detected. Regardless of the shape of the field, the total amount of electrons irradiated into the field is the same. Therefore, the rectangular field has a higher current density than the square field. Therefore, even if a smaller area of the wafer is provided with a mark, it can be fully detected Sensitivity to detect. In addition, compared with a square field, the aberration management of a rectangular field is easier.

In FIG. 19, the exposure field of either the square field SF or the rectangular field RF is set to include the optical axis AXe of the electron beam optical system. However, the present invention is not limited to this, and the exposure field may be set in the aberration effective region without including the optical axis AXe. Moreover, the exposure field may be set to a shape other than a rectangle (including a square), for example, an arc shape.

Next, with the exposure apparatus 100 of this embodiment, the dose control performed in the exposure of the wafer W will be described.

The illuminance unevenness in the exposure field is controlled by the main control device 110 when the exposure is described later, using the illuminance distribution adjustment element 94, for each crystal, the variable polarization state is controlled by the above-mentioned control of the applied voltage. Each area corresponding to the crystal (the area on the light-receiving surface of the pattern generator 84 corresponding to each crystal) is controlled for light intensity (illumination) so as to perform in-plane illumination distribution on the electron emission surface of the photoelectric layer 60, and Adjustment of the illuminance distribution in the exposure field RF corresponding to the wafer surface. That is, the respective intensities of the plurality of electron beams irradiated to the exposure field RF are appropriately adjusted. In addition, in the exposure device 100 of this embodiment, since the pattern generator 84 is composed of GLV, the main control device 110 can use the pattern generator 84 itself to generate halftones, so it can also be adjusted to irradiate the photovoltaic layer 60. The intensity of each light beam above is used to adjust the illuminance distribution in the plane of the electron emission surface of the photoelectric layer 60 and the illuminance distribution in the exposure field RF on the wafer surface corresponding thereto, that is, dose control. Of course, the main control device 110 may also use the illuminance distribution adjusting element 94 and the pattern generator 84 together to adjust the in-plane illuminance distribution on the electron emission surface of the photoelectric layer 60.

In addition, as the adjustment of the illuminance distribution in the plane of the electron emission surface of the photoelectric layer 60, the intensity of a plurality of electron beams (irradiance of the electron beam) generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion is mentioned before. , Beam current amount) become almost the same way to adjust the intensity of a plurality of beams generated in the pattern generator 84 and irradiated onto the photoelectric layer 60. The adjustment of the intensity of the beam can be performed in the illumination system 82, the pattern generator 84, or the projection optical system 86. However, regarding the intensity of the plurality of electron beams (irradiance of the electron beam and beam current) generated from the electron emission surface of the photoelectric layer 60 by photoelectric conversion, at least a part of the beam may be different from other beams. Method to adjust the intensity of the plurality of beams.

In addition, the resist layer formed on the wafer is not only affected by the in-plane illuminance distribution on the electron-emitting surface of the photovoltaic layer 60, but also by other factors, such as forward scattering of electrons, backward scattering, or fogging And other effects.

Here, the so-called forward scattering refers to the phenomenon in which electrons incident on the resist layer on the wafer surface are scattered in the resist layer before reaching the wafer surface; the so-called back scattering means that via the anti- The electrons that reach the wafer surface from the etchant layer are scattered on the wafer surface or inside and re-emitted into the resist layer and scattered to the surroundings. The term "fogging" refers to a phenomenon in which the reflected electrons from the surface of the resist layer are re-reflected on the bottom surface of the cooling plate 74, and the dose is increased in the surroundings.

As is clear from the above description, the range affected by forward scattering is narrower than that of back scattering and fogging. Therefore, in the exposure device 100, different correction methods are used for forward scattering, and back scattering and fogging.

In PEC (Proximity Effect Correction) to reduce the influence of the forward scattering component, the main control device 110 estimates the influence of the forward scattering component and adjusts the use of the pattern generator 84 (and / or illuminance) through the control unit 11 The illumination distribution in the plane of the distribution adjusting element 94).

On the other hand, in the PEC to reduce the influence of the backscattering component and the FEC (Fogging Effect Correction) to reduce the influence of fogging, the main control device 110 uses the illuminance through the control unit 11 The distribution adjusting element 94 adjusts the in-plane illuminance distribution at a certain spatial frequency.

However, the exposure apparatus 100 according to this embodiment is used for, for example, complementary lithography. In this case, in a liquid immersion exposure using an ArF light source, for example, a wafer having an L / S pattern formed by using a double patterning or the like is used as an exposure object for forming a pattern for cutting the line pattern. Cutting pattern. In the exposure apparatus 100, a cutting pattern corresponding to 72,000 light holes 58a formed on the light shielding film 58 of the photovoltaic element 54 can be formed.

The processing flow of the wafer in this embodiment is as follows.

First, a wafer W coated with an electron beam resist before exposure is placed on a wafer stage WST in the stage chamber 10 and is adsorbed by an electrostatic jig.

At least one alignment mark corresponding to, for example, 45 projection areas on the wafer W formed on the wafer stage WST and formed as a score line (street line) is irradiated from each electron beam optical system 70 Electron beam, the reflected electrons from at least one alignment mark are detected by at least one of the reflected electron detection devices 106 _x1 , 106 _x2 , 106 _y1 , and 106 _y2 , and a full-point alignment measurement of the wafer W ₁ is performed Based on the results of the omni-point alignment measurement, exposure to the plurality of projection areas on the wafer W ₁ using 45 exposure units 500 (multi-beam optical system 200) is started. For example, in the case of complementary lithography, when a plurality of beams (electron beams) emitted from each multi-beam optical system 200 are used to form and form the wafer W with the X-axis direction as a periodic direction When the L / S pattern is opposite to the cutting pattern, the wafer W (wafer table WST) is scanned in the Y-axis direction, and the irradiation timing (on, off) of each beam is controlled. In addition, instead of performing full-point alignment measurement, an alignment mark formed corresponding to a part of the projected area of the wafer W may be detected, and exposure of 45 projected areas may be performed based on the result. In this embodiment, the number of exposure units 500 is the same as the number of projection areas, but may be different. For example, the number of exposure units 500 may be less than the number of projection areas.

Here, the exposure sequence using the pattern generator 84 will be described. Here, a plurality of pixel areas of 10 nm square (which coincide with the irradiation area of the beam passing through the light hole 58a) adjacent to each other in a certain area on the wafer and arranged in an XY two-dimensional manner are virtually set. The case of exposure will be described. Here, as the stripe row, it is assumed that there are 12 stripeers of A, B, C,..., K, and L.

If the description is focused on the strip line A, the exposure using the strip line A is started for a continuous 6000 pixel area arranged in a certain column (set as the Kth column) in the X-axis direction on the wafer. At the moment when the exposure starts, the beam reflected by the stripe row A is set to be in place. Furthermore, from the beginning of the exposure, following the scanning in the + Y direction (or -Y direction) of the wafer W, the beam is deflected in the + Y direction (or -Y direction), and the same 6000 pixel area is continuously exposed. Moreover, if the exposure of the 6000 pixel area is ended with time Ta [s], for example, the wafer stage WST travels at a speed V [nm / s] during the time, such as Ta × V [nm]. Here, for convenience, it is set to Ta × V = 96 [nm].

Next, the beam is returned to the original position while the wafer stage WST is scanned at a speed V in the + Y direction for 24 nm. At this time, the beam is turned off so that the resist on the wafer is not actually exposed. The beam is closed using an AO deflector 90.

At this time, since the wafer stage WST travels 120nm in the + Y direction from the above-mentioned exposure start time, the continuous 6000-pixel area of the (K + 12) th column is located the same as the 6000-pixel area of the Kth column at the exposure start time. position.

Therefore, similarly, while the wafer stage WST is biased toward the following beam, the continuous 6000-pixel area of the (K + 12) th column is exposed.

In fact, at the same time as the exposure of the 6000-pixel area of the K-th column, the 6000-pixels of the (K + 1)-(K + 11) -th column are used as stripe rows by B, C, ..., K , L exposure.

In this way, for a region with a length of 60 μm in the X-axis direction on the wafer, the wafer platform WST can be scanned in the Y-axis direction while exposure (scanning exposure) can be performed. If the same scanning exposure is performed in steps of 60 μm in the X-axis direction, exposure can be performed in a region having a range of 60 μm adjacent in the X-axis direction. Therefore, by alternately performing the scanning exposure and the step of the X-axis direction of the wafer platform alternately, one exposure unit 500 can be used to expose one projection area on the wafer. In addition, in fact, since 45 exposure units 500 can be used to simultaneously expose different projection areas on a wafer, a full wafer exposure can be performed.

In addition, the exposure device 100 is used for complementary lithography to form a cutting pattern opposite to the L / S pattern formed on the wafer W with, for example, the X-axis direction as a periodic direction. Therefore, in the pattern generator 84, The beam reflected by any one of the 72,000 strips 84b is turned on to form a cutting pattern. In this case, 72,000 beams can be set on or off at the same time.

In the exposure apparatus 100 of this embodiment, in the scanning exposure of the wafer W based on the above-mentioned exposure sequence, the main control device 110 controls the platform driving system 26 based on the measurement values of the position measurement system 28, and passes each exposure The control unit 11 of the unit 500 controls the light irradiation device 80 and the electron beam optical system 70. At this time, based on an instruction from the main control device 110, the above-mentioned dose control is performed by the control unit 11 as necessary.

However, the dose control described above is dose control performed by controlling the illuminance distribution adjusting element 94 or the pattern generator 84, or the illuminance distribution adjusting element 94 and the pattern generator 84, so it can be called dynamic dose control.

However, the dose control that can be used in the exposure apparatus 100 is not limited to this, and the dose control as described below can also be used.

For example, due to blur (speckle) and / or resist blur caused by the optical system, as shown in FIG. 20 (A), the wafer should have a square (or rectangular) cutting pattern (resist pattern) CP. For example, four corners (corners) may be rounded to form the cutting pattern CP ′. In this embodiment, as shown in FIG. 20 (B), the light beam may also be irradiated to the photoelectric device through non-rectangular light holes 58a 'provided with auxiliary patterns 58c at the four corners of the light holes 58a formed on the light-shielding film 58. The layer 60 irradiates the electron beam generated by the photoelectric conversion onto the wafer through the electron beam optical system 70, thereby forming an irradiation region of the electron beam having a shape different from that of the non-rectangular light hole 58a '. On the wafer. In this case, the shape of the irradiation area of the electron beam and the shape of the cutting pattern CP to be formed on the wafer may be the same or different. For example, when the effect of the blur of the resist can be basically ignored, if the shape of the irradiation area of the electron beam becomes substantially the same as the shape of the desired cutting pattern CP (for example, rectangular or square), the optical hole is determined. The shape of 58a 'is sufficient. The use of the light hole 58a 'in this case may not be regarded as dose control.

Here, in the light holes 58a ', it is not necessary to provide auxiliary patterns 58c on all four corners of the rectangular light holes 58a, and it is also possible to provide auxiliary patterns 58c only on at least a part of the four corners of the light holes 58a. In addition, the auxiliary patterns 58c may be provided on all of the four corners of the rectangular light holes 58a only in a part of the plurality of light holes 58a ′ formed on the light shielding film 58. In addition, a part of the plurality of light holes formed on the light shielding film 58 may be a light hole 58a ′, and the rest may be light holes 58a. That is, it is not necessary to make all the shapes of the plurality of light holes 58 a ′ formed in the light shielding film 58 the same. In addition, it is thought that the shape and size of the light hole can also be designed based on the simulation results, but it is desirable to optimize based on the actual exposure results, for example, based on the characteristics of the electron beam optical system 70. In any case, the shape of each light hole is determined by suppressing the rounding of the corners of the irradiation area on the wafer (target). In addition, the influence of the forward scattering component can also be reduced by the shape of the light hole.

In addition, for example, when the blur caused by the optical system can be substantially ignored, the shape of the light hole 58a 'and the irradiation area of the electron beam may be the same.

The exposure device 100 includes a plurality of electron beam optical systems 70, one of which is 45, but the 45 electron beam optical systems 70 are manufactured in a manner that satisfies the same specifications and undergoes the same manufacturing steps. As shown schematically in 21 (A), the inherent distortion (distortion aberration) of the exposure field distortion occurs in common in the 45 electron beam optical systems 70. The distortion common to the plurality of electron beam optical systems 70 is shown schematically in FIG. 21 (B). The arrangement of the light holes 58a on the light shielding film 58 on the photoelectric layer 60 can be set to eliminate or reduce the above-mentioned distortion. Configuration. The circle in FIG. 21 (A) indicates the aberration effective area of the electron beam optical system 70.

In Fig. 21 (B), for convenience of understanding, each light hole 58a is not rectangular, but is shown as a parallelogram, etc. However, in fact, the light hole 58a in the light shielding film 58 is formed as a rectangle or a square. This example shows a case where a plurality of optical holes 58a are arranged on the photoelectric layer 60 along a winding-type distortion shape to cancel or reduce barrel distortion inherent in the electron beam optical system 70. In addition, the distortion of the electron beam optical system 70 is not limited to barrel distortion. For example, when the distortion of the electron beam optical system 70 is a winding distortion, in order to eliminate or reduce the effect, a plurality of light holes 58a may be arranged. Distorted barrel shape. In addition, the positions of the plurality of light beams from the projection optical system 86 may be adjusted or not adjusted according to the arrangement of each light hole 58a.

As described above, the exposure apparatus 100 according to this embodiment includes 45 exposure units 500 (see FIG. 18) including a multi-beam optical system 200, a control unit 11, and a signal processing device 108. The multi-beam optical system 200 includes a light irradiation device 80 and an electron beam optical system 70. The light irradiation device 80 includes a pattern generator 84 that can provide a plurality of individually controllable light beams, an illumination system 82 that irradiates the pattern generator 84 with illumination light, and a projection optical system 86 that will be from the pattern generator 84 The plurality of light beams are irradiated onto the photoelectric element 54; and the electron beam optical system 70 irradiates the electrons emitted from the photoelectric element 54 by irradiating the plurality of light beams to the photoelectric element 54 as a plurality of electron beams onto the wafer W. Therefore, according to the exposure device 100, since there is no obstructing light hole, the source of the complex distortion caused by charging or magnetization basically disappears, and unnecessary electrons (reflected electrons) that are not helpful for the exposure of the target become zero, so Can eliminate long-term unstable factors.

In addition, with the exposure device 100 of this embodiment, during the actual exposure of the wafer, the main control device 110 controls the scanning (movement in the Y-axis direction) of the wafer stage WST that holds the wafer W via the stage driving system 26. ). At the same time, the main control device 110 passes each of the m (for example, 45) multi-beam optical systems 200 of the exposure unit 500 through the n (for example, 72,000) light holes 58a of the photoelectric element 54 respectively. The irradiation states (on and off states) of the n beams are individually changed in each light hole 58a, and each divided region corresponding to each crystal is illuminated using an illumination distribution adjustment element 94, or a pattern generator 84 is used. The intensity of the beam is adjusted for each beam.

In the exposure device 100, the first electrostatic lens 70c ₁ of the electrostatic multipole 70c is used to rapidly and separately correct the X-axis direction and the X-axis direction caused by the Coulomb effect caused by the change in the total current amount. Y-axis direction reduction ratio (change). In the exposure device 100, the second electrostatic lens 70c _{2 is} used to collectively correct the deviation of the irradiation position of the beam caused by various vibrations (the bright pixels in the optical pattern, that is, the projection position of the cutting pattern described later is misaligned). shift).

Thereby, a cutting pattern can be formed at a desired position on a desired line of a fine line and a space pattern, and high-precision and high-throughput exposure can be performed. The line and space pattern is, for example, by using an ArF liquid immersion exposure apparatus. Double patterning, etc., and is formed in advance on each of, for example, 45 projection areas on the wafer, and the X-axis direction is the periodic direction.

Therefore, when using the exposure device 100 of this embodiment to perform the above-mentioned complementary lithography to cut off the L / S pattern, each of the multi-beam optical systems 200 can be used even from a plurality of light holes 58a. In the case where the beam passing through any one of the optical holes 58a becomes the open state, in other words, regardless of the combination of the beams that become the open state, a cut can be formed at a desired X position on a fine line and a desired line in the space pattern The pattern, the above-mentioned line and space pattern are formed in advance on each of, for example, 45 projection areas on the wafer, and the X-axis direction is a periodic direction.

Moreover, in the exposure apparatus 100 of this embodiment, since the above-mentioned photoelectric capsule 50 is used, the transportation of the photoelectric element 54 is easy, and the assembly of the electron beam optical unit 18A of the photoelectric element 54 in the casing 19 is easy. Moreover, only by evacuating the inside of the first vacuum chamber 34, the respective cover members 64 of the plurality of photoelectric capsules 50 can be separated from the main body portion 52 by their own weight, and the actuators 66 can be adjusted by the vacuum. The driven lid storage plate 68 can be received at the same time and can be stored in the circular hole 68a. Therefore, the lid members 64 of the plurality of photoelectric capsules 50 can be removed in a short time. In addition, during the maintenance of the electron beam optical unit 18A, the plurality of cover members 64 respectively housed in the plurality of circular holes 68a of the cover storage plate 68 are simultaneously pressed against the corresponding body portion 52 of the corresponding photoelectric capsule 50 In the above state, only by opening the atmosphere in the first vacuum chamber 34, the pressure difference between the inside (vacuum) and the outside (atmospheric pressure) of the photocapsule 50 can make each cover member 64 correspond to the corresponding one. The main body portion 52 is integrated. This can reliably prevent the photovoltaic layer 60 from contacting the air. Further, in a state where the cover member 64 is mounted on the main body portion 52, the main body portion 52 can be released from the first plate 36 that supports the main body portion 52 in a releasable manner.

In addition, in the exposure apparatus 100 of the above-mentioned embodiment, instead of the pattern generator 84 having 12 rows of strip lines 85 shown in FIG. 13, a pattern having 13 rows of strip lines 85 shown in FIG. 22 may be used. Generator 184. In the pattern generator 184, the uppermost strip line in FIG. 22 (indicated as 85a for identification in FIG. 22) is among the 12 lines of the commonly used strip line (main strip line) 85. When a defect occurs in any of these, a spare strip line is used instead of the strip line 85 in which the defect occurred. A plurality of spare strip lines 85a may also be provided.

In the exposure device 100, the light receiving surface of the pattern generator 84 is substantially divided into 2 × 12 = 24 partial regions by the illumination distribution adjusting element 94 (see FIG. 13). A spare strip line is set in some areas.

In addition, in the description so far, it is assumed that each strip 84b of the pattern generator corresponds to the light hole 58a of the photovoltaic element 54 in a 1: 1 correspondence, that is, each strip 84b and the electron beam irradiated onto the wafer are connected to each other. 1: 1 correspondence. However, the invention is not limited to this, and may be configured to irradiate a target region (referred to as a first target region) on the target wafer with the following electron beam. One strip line in the strip line 85, for example, a light beam from one strip 84b included in the strip line adjacent to the spare strip line 85a is generated by irradiating the photovoltaic element 54; and The electron beam is irradiated to the first target area on the wafer as follows. The electron beam is emitted from, for example, one of the strips 84b contained in the stripe row 85a or other stripe rows in the main stripe row 85. The light beam from one of the contained strips 84b is generated by irradiating the photoelectronic element 54. That is, the electron beams generated in the photoelectric element 54 due to the irradiation of the light beams from the two strips 84b included in the different stripe lines may be overlapped and irradiated to the same target area on the wafer. Thereby, for example, the dose amount of the target area can also be brought into a desired state.

Alternatively, instead of the pattern generator 84 shown in FIG. 13, a pattern generator in which a strip line 85 b for correction is added to the main strip line 85 as shown in FIG. 23 (A) may be used. The stripe row 85b is arranged to be shifted by a distance which is only 1 times the width of the less-than-striped stripe 84b (the arrangement pitch of the stripe 84b). The stripe line 85b for correction shown in FIG. 23 (A) is shown in FIG. 23 (B), which is shown by magnifying the vicinity of the circle B in FIG. 23 (A), and only shifts the width of the stripe 84b. One half (half (1 μm) of the arrangement pitch of the strip 84b) is arranged. It is also possible to use the strip line 85b for this correction to perform minor dose adjustments such as PEC (Proximity Effect Correction). GLVs can also be used to make halftones, which is effective when you want to correct them with pixel misalignment. In addition to the main strip line 85, the pattern generator may also have a spare strip line 85a and a correction strip line 85b.

In addition, in the above-mentioned embodiment, the case where the pattern generator 84 is constituted by GLV has been exemplified, but it is not limited to this. A reflective liquid crystal display element, a digital micromirror device, or PLV may also be used. (Planer Light Valve) is a reflective spatial light modulator of a plurality of movable reflective elements to form a pattern generator 84. Alternatively, depending on the configuration of the optical system inside the light irradiation device 80, the pattern generator may be composed of various transmission-type spatial light modulators. If the pattern generator 84 is a pattern generator capable of providing a plurality of individually controllable light beams, the pattern generator 84 is not limited to the spatial light modulator, but can use not only the on / off of the beam, but also adjust the intensity and change the size. Pattern generator. In addition, the pattern generator 84 does not need to perform beam control (on, off, intensity adjustment, size change, etc.) of each beam, and may be performed on only a part of the beams, or on a plurality of beams. Every one is carried out.

Therefore, various configurations of the optical unit equivalent to the optical unit 18B of the above-mentioned embodiment are considered. FIG. 24 shows a configuration example of a plurality of types of optical units. The optical unit shown in FIG. 24 (A) may be called an L-type reflection type, and includes: an illumination system unit IU, which includes a plurality of illumination systems arranged two-dimensionally on a XZ plane with a predetermined positional relationship; a plurality of patterns are generated An optical unit IMU including a plurality of pattern generators on a surface of a basic BS inclined at 45 degrees with respect to the XY plane, and two-dimensionally arranged in a positional relationship corresponding to each of the plurality of lighting systems; and an optical unit IMU 84, and a plurality of projection optical systems arranged two-dimensionally on the XY plane in a positional relationship corresponding to the corresponding optoelectronic elements. Although the optical axis of each of the plurality of imaging optical systems is not shown, it is consistent with the optical axis of the corresponding electron beam optical system. In this case, the pattern generator 84 is composed of a reflective spatial light modulator in the same manner as in the above embodiment. This L-type reflection type has the following advantages: it is easy to connect the pattern generator, and the restriction on the size of the light-receiving surface of the pattern generator is relaxed compared with the above embodiment and the like.

The optical unit shown in FIG. 24 (B) may be called a U-type reflection type, and includes: an illumination system unit IU, which includes a plurality of illumination systems arranged two-dimensionally on a XY plane with a predetermined positional relationship; a plurality of reflection types The spatial light modulator 84 _{1 is} arranged two-dimensionally on a surface of the basic BS ₁ inclined at -45 degrees with respect to the XY plane, with a positional relationship corresponding to each of a plurality of lighting systems; a plurality of reflective types The spatial light modulator 84 ₂ , which is two-dimensionally arranged on a surface of the base BS ₂ inclined at 45 degrees with respect to the XY plane, with a positional relationship corresponding to the plurality of spatial light modulators 841; and an optical unit The IMU includes a plurality of spatial light modulators 84 ₂ and a plurality of projection optical systems that are two-dimensionally arranged on the XY plane in a positional relationship corresponding to the corresponding optoelectronic elements. Although the optical axes of the plurality of projection optical systems are not shown, they are identical to the optical axes of the corresponding electron beam optical systems. In this case, for example, if one of the reflection-type spatial light modulators 84 _{2 is} used as a pattern generator, the other spatial light modulator 84 ₁ may be used as the one having the same or more than the above-mentioned illumination distribution adjustment element 94. Illumination distribution adjustment device with high resolution.

The optical unit shown in FIG. 24 (C) can be referred to as a straight transmission type. The optical system (light irradiation device 80A) formed by disposing the illumination system, the pattern generator 84, and the projection optical system on the same optical axis is the same as the plural A plurality of photoelectric elements are arranged in a two-dimensional and two-dimensional manner in the same housing (lens barrel) 78 corresponding to a predetermined positional relationship. The optical axis of the plurality of light irradiation devices 80A is consistent with the optical axis of the corresponding electron beam optical system. In the straight transmission type, the pattern generator 84 must use a transmission type spatial light modulator, such as a transmission type liquid crystal display element. The straight transmission type has the following advantages: it is easy to ensure the accuracy of each axis, the size of the lens barrel is compact, and both of the two methods described later using FIG. 25 (A) and FIG. 15 (B) will be described.

FIG. 24 (D) simplifies and shows an optical unit of the same type as the optical unit 18B used in the exposure apparatus 100 of the above embodiment. The optical unit shown in FIG. 24 (D) can be called a straight reflection type, and has the same advantages as the straight transmission type.

In the embodiment described above, although the photovoltaic layer 60 is irradiated with light through the light hole 58, the light hole may not be used.

Alternatively, as shown in FIG. 25 (A), a light pattern image formed in the pattern generator may be projected onto a photoelectric element, and the photoelectric element may be further used to convert into an electronic image, and the image may be reduced and formed on a wafer surface.

In the above-mentioned embodiment, as shown in FIG. 25 (B), the photovoltaic layer is irradiated with light through a plurality of light holes. By using the light hole as described above, the light beam having a desired cross-sectional shape can be incident on the photoelectric layer without being affected by aberrations and the like of the projection optical system between the pattern generator and the photoelectric element. In addition, the optical hole and the photovoltaic layer may be integrally formed as described in the above embodiment, or may be disposed to face each other through a predetermined gap (gap, gap).

In addition, in the above-mentioned embodiment, the case where the transparent plate member 56 also serving as a vacuum separation wall, the light shielding film 58 formed with the light hole 58a, and the photoelectric layer 60 are integrated has been described, but the vacuum separation wall, the light shielding film (light Porous film) and photovoltaic layer can be configured in various ways.

In addition, in the above-mentioned embodiment, the case where the lead-out electrode 112 is provided around the circular opening 68c of the cover storage plate 68 has been exemplified, but a measurement electron may be provided on the cover storage plate 68 instead of or in addition to this. At least one of a measuring member for the position of the beam and a sensor for detecting the electron beam. The former measurement member that measures the position of the beam can be used: a combination of a reflective surface with an opening and a detection device that detects the reflected electrons from the reflective surface, or a reflective surface with a mark formed on the surface and detection of the occurrence by the mark A combination of detection devices for reflected electrons.

"Second Embodiment"

FIG. 26 schematically shows the configuration of an exposure apparatus 1000 according to the second embodiment. Here, the same reference numerals are used for the same or equivalent components as those of the exposure apparatus 100 according to the first embodiment, and descriptions thereof are omitted.

The difference between the exposure device 1000 and the exposure device 100 according to the first embodiment is that in the exposure device 100 according to the first embodiment described above, the through hole 36 a of the first plate 36 inserted into the body portion 52 of the photoelectric capsule 50 is borrowed. The aspect that the vacuum separation wall 132 formed of quartz glass or the like that divides the first vacuum chamber 34 is closed in an airtight state with respect to the outside; and the first part 19a of the casing 19 that forms the first vacuum chamber 34 Internal composition. The following description focuses on the differences.

FIG. 27 shows the internal configuration of a casing 19 corresponding to one electron beam optical system 70 of the exposure apparatus 1000 of the second embodiment. As shown in FIG. 27, a photoelectric element 136 is disposed below a predetermined distance from the vacuum separation wall 132. As shown in FIG. 28 (A), the photovoltaic element 136 includes a substrate 134 made of quartz (SiO ₂ ) and a light shielding film 58 which are arranged in the same order as the above-mentioned photovoltaic element 54 and are integrally formed by the same method. And photoelectric layer 60. At least 72,000 light holes 58a are formed on the light-shielding film 58 of the photoelectric element 136 in the same arrangement as described above.

Returning to FIG. 27, a lead-out electrode 112 a is disposed below the photoelectric element 136 inside the first vacuum chamber 34.

Since the exposure device 1000 does not use the photocapsule 50, a lid storage plate 68 and a vacuum-compatible actuator 66 are not provided in the first vacuum chamber 34 (see FIGS. 26 and 27).

The electron beam optical unit 18A of the second embodiment includes a bottom plate 38, and the structure below it includes the electron beam optical system 70 inside the second vacuum chamber 72, which is the same as the exposure apparatus 100 of the first embodiment described above. The configuration other than the electron beam optical unit 18A is the same as that of the exposure apparatus 100 described above.

The exposure device 1000 configured as described above has the same effect as that of the exposure device 100 according to the first embodiment described above, and is provided with a photoelectric element 136 separately from the vacuum partition wall 132, so it can also have the following properties: The additional functions are described.

That is, if the diameter of the lens barrel is reduced in order to increase the number of electron beam optical systems, the image plane curvature component of the electron beam optical system becomes significant. For example, when the electron beam optical system has a curved image plane as shown in FIG. 29 as its aberration, as shown schematically in FIG. 29, the photoelectric layer 60 (accurately the The whole) is flexed so as to generate a phase opposite to the curved component of the image plane on the photovoltaic layer 60, that is, the electron emitting surface of the photovoltaic layer 60 is bent (becomes non-planar). Thereby, at least a part of the image plane curvature of the electron beam optical system 70 is compensated, and the positional shift, speckle (defocus), etc. of the electron beam image caused by the image plane curvature are suppressed. In addition, the amount of curvature of the electron emission surface of the photoelectric layer 60 may be changed. For example, the amount of curvature of the electron emission surface may be changed as the optical characteristics (aberrations, such as curvature of the image plane) of the electron beam optical system 70 are changed. Therefore, according to the optical characteristics of the corresponding electron beam optical system, the amount of bending of the electron emission surface may be different between the plurality of photoelectric elements 136. In addition, FIG. 29 shows an example of the case where the convexity on the photoelectric layer 60 is convex toward the + Z direction (toward the projection optical system 60). This is because the electron beam optical system is assumed to remain convex toward the −Z direction. The curvature of the image plane is used as the aberration. Therefore, the photovoltaic layer 60 is given a curvature that cancels out or reduces the influence of the curvature of the image plane. Therefore, in a case where the electron beam optical system keeps the convex surface curved in the + Z direction as its aberration, it is necessary to cause the photoelectric layer 60 to be curved convex in the −Z direction.

In addition, in the exposure apparatus 1000 of the second embodiment, similar to the exposure apparatus 100 described above, an exposure field having a long rectangular shape in the X-axis direction is used. Therefore, as shown by the short double arrow in FIG. Bending in a direction (bending around a single axis, that is, bending in the XZ section about the X-axis direction) is also effective. In addition, the photovoltaic element 136 (the photovoltaic layer 60) is not limited to one-direction bending, and of course, the four corners may be bent downward, etc., so as to be three-dimensionally deformed. By changing the way in which the photovoltaic element 136 is deformed, it is possible to effectively suppress the positional shift and deformation of the optical pattern image caused by spherical aberration. When the electron emission surface of the photoelectric layer 60 is bent, the positions of the electron emission surface of one part (for example, the central part) and the other part (for example, the peripheral part) of the electron beam optical system 70 are different from each other. .

In addition, the thickness of the photoelectric layer 60 may be distributed so that the position of the direction of the optical axis AXe of one part (for example, the central part) of the electron emission surface and the other part (for example, the peripheral part) is different.

In addition, when the photoelectric element also functions as a vacuum barrier, as in the first embodiment, the electron emission surface of the photoelectric layer 60 may be curved (non-planar).

In addition, in the case of using a so-called light hole-integrated photoelectric element in which the light hole such as the photoelectric element 136 is integrally provided with the photoelectric layer, it may be provided that the light hole-integrated photoelectric element can be driven in the XY plane. Actuator. In this case, for example, as the optical-hole-integrated photoelectric element, as shown in FIG. 30, a row of light holes 58a having a pitch a and a row of light holes 58b having a b pitch may be used. Pitch-type optical hole-integrated photovoltaic element 136a. However, in this case, the above-mentioned optical characteristic adjustment device 87 is used, and a zoom function is used to change the projection magnification (magnification) in the X-axis direction. In this case, as shown in FIG. 31 (A), the optical characteristic adjusting device 87 can be used to expand the projection optical system 86 from the state where the beam is irradiated to the optical hole 58a of the optical-hole-integrated photoelectric element 136a. The magnification in the X axis direction is shown by the double arrow in FIG. 31 (B). After the plurality of beams are enlarged in the X axis direction as a whole, as shown by the hollow arrow in FIG. 31 (C), the + Y The optical-hole-integrated photoelectric element 136a is driven in the direction, so that the beam can be irradiated to the optical hole 58b. Thereby, cutting patterns for cutting line patterns with different pitches can be formed. However, depending on the size and shape of the beam, even if the zoom function of the projection optical system 86 is not necessarily used, only the light-hole-integrated photoelectric element 136a is driven, and the beam can be switched to illuminate the light holes 58a with a distance of Rows of light holes 58b with a pitch of b. In short, in any of the states before and after the switching, it is only necessary to irradiate the area on the photoelectric element 136a including the optical holes 58a or 58b corresponding to the plurality of beams (laser beams), respectively. That is, the size of each of the plurality of light holes 58a or 58b in the photoelectric element 136a may be smaller than the size of the cross section of the corresponding beam.

In addition, by forming rows of three or more kinds of light holes with different pitches on the photoelectric element 136a on the light-shielding film 58 of the photoelectric conversion element and exposing them in the same order as described above, it is also possible to correspond to three or more gaps. Formation of cutting patterns.

As described above, if the magnification of the projection optical system 86 is changed, the intensity of the beam (laser beam) per unit area in the irradiated surface changes. Therefore, it can also be obtained in advance by simulation or the like. The relationship between the change in the magnification and the change in the intensity of the beam, and the intensity of the beam is changed (adjusted) based on the relationship. Alternatively, a sensor may be used to detect the intensity of a part of the beam when the magnification is changed, and change (adjust) the intensity of the beam based on the detected intensity information. In the latter case, for example, as shown in FIG. 27, a sensor 135 may be provided at one end of the upper surface of the base material of the photoelectric element 136, and the photoelectric element 136 is driven by the above-mentioned actuator, so that The sensor 135 moves to a desired position in the XY plane. In addition, the photoelectric element 136 can be moved not only in the XY plane, but also in such a manner that it can move in the Z-axis direction parallel to the optical axis AXe, can be inclined with respect to the XY plane, and can surround the Z-axis parallel to the optical axis AXe. Spin.

However, although it has not been specifically described so far, the photoelectric layer 60 does not guarantee uniform photoelectric conversion efficiency within the plane because it has a certain degree of area. In fact, it is considered that the photoelectric layer 60 has an in-plane distribution of photoelectric conversion efficiency. Therefore, the intensity of the light beam irradiated onto the photoelectric element can also be adjusted according to the in-plane distribution of the photoelectric conversion efficiency of the photoelectric layer 60. That is, if the photoelectric layer 60 includes the first part of the first photoelectric conversion efficiency and the second part of the second photoelectric conversion efficiency, the irradiation to the first part can be adjusted based on the first photoelectric conversion efficiency and the second photoelectric conversion efficiency, respectively. The intensity of the part of the beam and the intensity of the beam irradiated to part 2. Alternatively, the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency may be compensated to adjust the intensity of the light beam irradiated to the first portion and the intensity of the light beam irradiated to the second portion.

In the exposure apparatus 1000 according to the second embodiment, instead of the light-hole-integrated photovoltaic element 136, a so-called light-hole different-type photovoltaic element having a light-hole plate (light-hole member) and a photoelectric element that are different bodies may be used. The optical element 138 with different optical apertures as shown in FIG. 32 (A) includes: a photovoltaic element 140 formed by forming a photovoltaic layer 60 on the lower surface (light exit surface) of the substrate 134; and a light aperture plate 142 formed by A light-shielding member having a plurality of light holes 58a formed above the base material 134 of the photovoltaic element 140 (on the light incident surface side) and arranged with a predetermined gap (gap, gap) of, for example, 1 μm or less .

In the case of using photocells with different optical apertures, it is desirable to provide a driving mechanism capable of driving the optical aperture plate 142 in the XY plane. In this case, a multi-pitch light hole having the same multi-pitch type as the light hole-integrated photoelectric element 136a is formed on the light hole plate 142, and the magnification function of the projection optical system 86 is used, and the photoelectric elements 140 and The function of driving the optical aperture plate 142 while maintaining the positional relationship between the two can form cutting patterns for cutting line patterns with different pitches in the same order as described above. In addition, a driving mechanism capable of driving the photoelectric element 140 in the XY plane may be provided. For example, by driving only one of the photoelectric element 140 and the optical aperture plate 142, the relative position in the XY plane of the optical aperture plate 142 and the photovoltaic element 140 is staggered, whereby the lifetime of the photovoltaic layer 60 can be increased. In addition, the projection optical system 86 may be configured to be movable in the XY plane with respect to the light aperture plate 142. In addition, the optical aperture plate 142 can be moved not only in the XY plane but also in a Z-axis direction parallel to the optical axis AXe, can be inclined with respect to the XY plane, and can surround the Z-axis parallel to the optical axis AXe. The rotation can also adjust the gap between the photoelectric element 140 and the light aperture plate 142.

In addition, in the case of using photoelectric elements of different body types with light holes, only a driving mechanism for moving the photoelectric element 140 may be provided. In this case, the optoelectronic layer 60 can be extended in life by moving the optoelectronic element 140 in the XY plane.

In the case of using the bulk photovoltaic device described in the first embodiment, a driving mechanism for moving the photovoltaic device 54 may be provided. In this case, it is also possible to extend the life of the photovoltaic layer 60 by moving the photovoltaic element 54 in the XY plane.

In addition, the light holes of the light hole plate and the light holes of the photovoltaic element may be used in combination. That is, a light hole plate may be arranged on the incident side of the light beam of the light hole integrated photoelectric element, so that the beam passing through the light hole of the light hole plate enters the photoelectric layer through the light hole of the light hole integrated photoelectric element. .

In addition, when forming cutting patterns for cutting line patterns with different pitches, and when using the above-mentioned photocells with different optical apertures, it is also possible to exchange optical aperture plates.

In the case of using the above-mentioned photocells of different body types, a plurality of light holes may be formed by using a spatial light modulator such as a transmissive liquid crystal element instead of the light hole plate.

In addition, in the above, the case of using the magnification function of the magnification of the projection optical system 86 when forming cutting patterns for cutting line patterns with different pitches has been described, but the following device may be provided instead of changing the magnification. The distance between the plurality of beams in the plurality of light holes in the same light hole row of the light hole-integrated photoelectric element 136a or the light hole plate 142 from the projection optical system 86 is changed. For example, the distance between the plurality of beams can be changed by arranging a plurality of parallel flat plates in the optical path between the projection optical system 86 and the photoelectric element and changing the inclination angle thereof.

In addition, the optical-hole-integrated photoelectric element is not limited to the type shown in FIG. 28 (A), and it can also be used, for example, as shown in FIG. 28 (B). In the photovoltaic element 136 of FIG. 28 (A), the optical hole 58a The space inside is a photovoltaic element 136b of the type buried by the transparent film 144. In the optoelectronic element 136b, instead of the transparent film 144, a part of the base material may be used to fill the space in the light hole 58a.

In addition, a photovoltaic element 136c can also be used. As shown in FIG. 28 (C), a light-shielding having a light hole 58a is formed on the upper surface (light incident surface) of the substrate 134 by evaporation of chromium. Film 58 and a photovoltaic layer 60 formed on the lower surface (light exit surface) of the substrate 134; or a photovoltaic element 136d, which is shown in FIG. 28 (D) and a photovoltaic element 136c in FIG. 28 (C) In the light hole 58a, the space in the light hole 58a is filled with a transparent film 144.

In addition, there is a photovoltaic element 136e. As shown in FIG. 28 (E), a photovoltaic layer 60 is formed on the lower surface of the substrate 134, and a chromium film having a light hole 58a is formed on the lower surface of the photovoltaic layer 60. 58 types. In addition, the chromium film 58 in FIG. 28 (E) has a function of shielding electrons, and does not shield light.

Any one of the photo-hole-integrated photovoltaic elements 136, 136a, 136b, 136c, 136d, and 136e described so far is not only composed of quartz, but also a laminated body of quartz and a transparent film (single layer or multiple layers). To form a base material 134.

In addition, a light aperture plate that can be used together with the photoelectric element 140 in order to constitute a photovoltaic element with a different body type and a photovoltaic element 140 as shown in FIG. 32 (A) is not limited to the light aperture plate 142. It is also possible to use a light-perforated plate in which the substrate and the light-shielding film are integrated as a type formed only by a light-shielding member having a light hole. As this type of light aperture plate, for example, a light aperture plate 142a can be used, as shown in FIG. 32 (B), on the lower surface (light exit surface) of the substrate 144 formed of, for example, quartz, and chromium A light-shielding film 58 having a light hole 58a and a light hole plate 142b are formed by vapor deposition. As shown in FIG. 32 (C), a plate member 146 made of quartz and a transparent film 148 are formed. The base material 150 is formed on the lower surface (light exit surface) of the base material 150 with a light-shielding film 58 having a light hole 58a and a light hole plate 142c by evaporation of chromium, as shown in FIG. 32 (D). As shown, in the light hole plate 142a, the space inside the light hole 58a is filled with a transparent film 148; and the light hole plate 142d, as shown in FIG. 32 (E), in the light hole plate 142a, the light hole The space in 58a is filled with a portion of the substrate 144. In addition, any of the optical aperture plates 142, 142a, 142b, 142c, and 142d may be used by being inverted upside down.

In addition, in the above-mentioned first embodiment, instead of the photovoltaic element 54 which also serves as a vacuum partition wall of the main body portion 52 of the photoelectric capsule 50, a vacuum partition wall is provided on the main body portion 52, and under the vacuum partition wall, A plurality of types of optical-hole-integrated photoelectric elements or optical elements of different body types with different optical holes are arranged through a predetermined gap, and are stored in the main body portion 52. It is also possible to provide a drive mechanism for the light hole-integrated photoelectric element 136 (136a to 136d), or a drive mechanism to move at least one of the photoelectric element 140 and the light hole plate 142 (142a to 142d).

It has been described so far that the plurality of light holes 58a of the photovoltaic elements 54, 136, 136a to 136e and the light hole plates 142, 142a to 142d are all the same size and shape, but the plurality of light holes 58a All the sizes may be different, and the shapes may be different in all the light holes 58a. In short, in order to irradiate the corresponding beam to its entire area, the optical hole 58a only needs to be smaller than the size of the corresponding beam.

In addition, in the exposure apparatus 1000 according to the second embodiment, the light aperture plate 142 may not be used. In this case, as described above, the wafer W is exposed while being moved in the Y-axis direction while being exposed to the scanning exposure by irradiating the electron beam. In this case, a cutting pattern for cutting line patterns with different pitches can be formed by switching one of the following states to the other: in the first state, in the X-axis direction, with the first pitch (E.g., pitch (interval) a), a plurality of light beams are irradiated to the photovoltaic layer 60 through the substrate 134 of the optoelectronic element 140; and the second state can be in the X-axis direction with a second pitch (e.g., pitch (interval)) b) The plurality of light beams are irradiated onto the photovoltaic layer 60 through the substrate 134 of the photovoltaic element 140. In this case, the function of changing the magnification of the projection optical system 86 is also used. In this case, instead of changing the magnification, a device may be provided that changes the distances (intervals) between the plurality of beams irradiated from the projection optical system 86 to the photoelectric element 140. For example, by arranging a plurality of parallel flat plates in the optical path between the projection optical system 86 and the photoelectric element and changing the inclination angle thereof, the distance (interval) between the plurality of beams can be changed. In this case, it can also correspond to the formation of cutting patterns with more than 3 pitches.

In the above-mentioned first and second embodiments (hereinafter referred to as the respective embodiments), the case where the optical system included in the exposure devices 100 and 1000 is a multi-row type including a plurality of multi-beam optical systems 200 has been described. However, it is not limited to this, and the optical system may also be a single-row type multi-beam optical system. Even for this single-row type multi-beam optical system, the above-mentioned dose control, magnification control, correction of image position shift of the pattern, and correction of various aberrations such as distortion can be applied using photoelectric elements or optical aperture plates Correction of various elements, long life of photovoltaic layer, etc.

In each of the above embodiments, an opening may be provided in the peripheral wall portion 76, and the inside of the second vacuum chamber 72 and the stage chamber 10 may be a single vacuum chamber. Alternatively, only a part of the upper end portion of the peripheral wall portion 72 may be left, and the cooling plate 74 may be removed to set the inside of the second vacuum chamber 72 and the stage chamber 10 as one vacuum chamber.

In each of the above embodiments, the wafer W has been transported separately on the wafer stage WST, and while the wafer stage WST is moved in the scanning direction, the wafer W is irradiated from the multi-beam optical system 200 The exposure apparatus 100 that performs exposure by beams is described, but it is not limited to this. The wafer W and the stage (holder) that can be transported integrally with the wafer called a transfer shuttle are integrally exchanged on a platform. Each of the above-mentioned embodiments (except for the wafer stage WST) can be applied to the exposure apparatus.

In each of the above embodiments, the case where the wafer stage WST can be moved in 6 degrees of freedom relative to the X stage has been described, but it is not limited to this, and the wafer stage WST may be only in the XY plane. mobile. In this case, the position measurement system 28 that measures the position information of the wafer platform WST can also measure the position information in the three degrees of freedom directions in the XY plane.

In each of the above embodiments, the case where the optical system 18 is supported on the bottom surface through the frame 16 constituting the ceiling portion of the platform chamber 10 has been described, but it is not limited to this, and may also be on the ceiling surface of a clean room or The ceiling surface of the vacuum chamber is suspended and supported at, for example, three points by a suspension support mechanism having a vibration-proof function.

In addition, the exposure technique constituting complementary lithography is not limited to the combination of the liquid immersion exposure technique using an ArF light source and the charged ion beam exposure technique. For example, it can also be formed using a dry exposure technique using an ArF light source or other light source such as KrF. Line and space pattern.

In addition, in each of the above-mentioned embodiments, the case where the target is a wafer for semiconductor device manufacturing has been described, but the exposure apparatuses 100 and 1000 of the above-mentioned embodiments may also be used to form a mask when a fine pattern is formed on a glass substrate. Appropriate.

Electronic elements (micro-elements) such as semiconductor elements are manufactured through the following steps: the function and performance design of the element, the step of manufacturing a wafer from a silicon material, the electron beam exposure device and the exposure method of the above embodiment The photolithography step of exposing the wafer (drawing of the pattern according to the designed pattern data), the developing step of developing the exposed wafer, and exposing members other than the part where the resist remains An etching step to remove by etching, a resist removing step to remove the resist that is not needed after the etching is completed, an element assembly step (including a cutting step, a bonding step, a packaging step), an inspection step, and the like. In this case, since the exposure method is performed using any of the exposure apparatuses 100 and 1000 of the above-mentioned embodiments in the lithography step, an element pattern is formed on the wafer, so the productivity is good ( Yield is good) to manufacture highly integrated micro-components. Especially in the lithography step, the above-mentioned complementary lithography is performed, and at this time, any one of the exposure apparatuses 100 and 1000 of the above-mentioned embodiments is used to implement the above-mentioned exposure method, thereby making it possible to manufacture micro-elements with higher integration.

In addition, in each of the above embodiments, an exposure apparatus using an electron beam has been described, but it is not limited to an exposure apparatus, and an apparatus that uses an electron beam to perform at least one of a predetermined process and a predetermined process on a target, such as welding. Or, in the inspection device using an electron beam, the electron beam device of the embodiment described above may be applied.

In addition, in each of the above embodiments, the case where the photoelectric layer 60 is formed of an alkali photoelectric conversion film has been described. However, depending on the type and application of the electron beam device, the photoelectric layer is not limited to the alkali photoelectric conversion film, and other types may be used. A type of photoelectric conversion film constitutes a photoelectric element.

Moreover, although the shape of a member, an opening, a hole, etc. was demonstrated using the circle, rectangle, etc. in each said embodiment, it is needless to say that it is not limited to these shapes.

In the first and second embodiments described above, as shown in FIG. 11 (A) and the like, since the reflective pattern generator 84 is used, the light receiving surface of the pattern generator 84 is illuminated by oblique incidence with the illumination system 82. In this case, it is required: on the light receiving surface of the pattern generator 84, the projection optical system 86 is used to effectively take in the inclined reflection on the paper surface (YZ plane) of FIG. 11 (A) with respect to the vertical direction (Z direction). Light. In other words, the reflected light from the light receiving surface of the pattern generator 84 must be effectively guided to the photoelectric conversion surface of the photoelectric element (photoelectric conversion element) 54 through the projection optical system 86. The following describes the basic configuration of a projection optical system that can efficiently take in reflected light from the light-receiving surface of the pattern generator 84 that has been obliquely illuminated.

FIG. 33 is a diagram schematically showing a configuration of a projection optical system according to a first type configuration. In FIG. 33, the same overall coordinates (X, Y, Z) as those in FIG. 11 (A) are used, and the paper surface of FIG. 33 and the paper surface of FIG. 11 (A) are the same XY planes. Hereinafter, in other related diagrams, unless otherwise specified, the same overall coordinates (X, Y, Z) as in FIG. 11 (A) are used. Furthermore, for ease of understanding, it is assumed that the Z direction of the global coordinates (X, Y, Z) is consistent with the vertical direction of space, and the XY plane is consistent with the horizontal plane of space.

In the configuration of the first type, as shown in FIG. 33, the normal line of the light receiving surface 84d of the pattern generator 84 is inclined on the paper surface (YZ plane) of FIG. 33 with respect to the optical axis AXo of the projection optical system 86A. And the normal of the photoelectric conversion surface 54a of the photoelectric element 54 is also inclined on the paper surface of FIG. 33 with respect to the optical axis AXo of the projection optical system 86A. The light-receiving surface 84d and the photoelectric conversion surface 54a are optically conjugately disposed via the projection optical system 86A, and the photoelectric conversion surface 54a is horizontally disposed. In addition, in FIG. 33, the projection optical system 86A only shows two lenses while holding the aperture stop AS. However, in reality, a plurality of lenses are arranged between the pattern generator 84 and the aperture stop AS. A plurality of lenses are arranged between the diaphragm AS and the photoelectric conversion surface 54 a of the photoelectric element 54.

In other words, the projection optical system 86A satisfies the conditions of Sain and Fluo regarding the light-receiving surface 84d corresponding to the object surface and the photoelectric conversion surface 54a corresponding to the image surface. In addition, when a light-diffractive light valve GLV is used as the pattern generator 84, the light-receiving surface 84d refers to a reflective surface of a plurality of reflective elements (corresponding to the strip 84b in the above embodiment) in a reference state. The configured side. In addition, the light-receiving surface 84d of the pattern generator 84 may be referred to as an arrangement surface where the reflection surfaces of the plurality of reflection elements included in the pattern generator 84 are arranged. As a result, the optical axis AXo of the projection optical system 86A is inclined with respect to the vertical direction (Z direction) on the paper surface of FIG. 33, and the light receiving surface 84d is inclined with respect to the horizontal direction (Y direction) on the paper surface of FIG. 33. In addition, the normal of the light-receiving surface 84d of the pattern generator 84 can also be inclined with respect to the optical axis AXo of the projection optical system 86A in a plane that rotates the YZ plane (in the θy direction) around the Y axis in FIG. 33. . At this time, the normal of the photoelectric conversion surface 54a of the photoelectric element 54 is only required to be relative to the optical axis AXo of the projection optical system 86A in the plane where the YZ plane in FIG. 33 is rotated around the Y axis (in the θy direction). Just tilt it. In other words, the normal of the light-receiving surface 84d of the pattern generator 84 may also be such that the Z axis in FIG. 33 is rotated around the X axis (in the θx direction) and is rotated around the Y axis (in the θy direction). In addition, the normal of the photoelectric conversion surface 54a of the photoelectric element 54 may be such that the Z axis in FIG. 33 is rotated around the Y axis (in the θy direction).

In the first type of structure shown in FIG. 33, only the optical axis AXo of the projection optical system 86A can be set from a vertical direction and tilted by a predetermined angle around the X axis (that is, in the θx direction). The composition of the optical system itself changes. Specifically, when the magnification of the projection optical system 86A is 1/6, the tilt angle of the optical axis AXo of the projection optical system 86A is about 1.7 degrees. Since the photoelectric conversion surface 54a is arranged along the horizontal plane (XY plane), if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system (electron beam optical system) 70, the photoelectric conversion surface 54a can be made vertical. The optical axis AXe of the electron optical system 70 coincides with the vertical direction, and installation of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set vertically with respect to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced.

In FIG. 33, a mirror 98 for bending an optical path is arranged on the incident side (light incident side) of the pattern generator 84. A wedge-shaped ridge 182e having a predetermined wedge angle (apex angle) is arranged on the incident side of the mirror 98. The mirror 98, which is a deflection member, and the focusing point adjustment member, which is disposed between the projection optical system 86A and the illumination optical system (strictly between the pattern generator 84 and the illumination optical system), and the illumination optical system will be described later. The function of the wedge 稜鏡 182e will be described.

In the first configuration, although the optical axis AXo of the projection optical system 86A is inclined with respect to the vertical direction, as shown in FIG. 34, the optical axis AXo of the projection optical system 86B and the vertical direction ( (Z-direction), and the light-receiving surface 84d and the photoelectric conversion surface 54a are both inclined with respect to the horizontal direction (Y-direction). The configuration of the second type shown in FIG. 34 is obtained by making the configuration of the first type shown in FIG. 33 only around the X axis and rotating only a predetermined angle. Therefore, the light receiving surface 84d and the photoelectric conversion surface 54a are optically conjugately disposed via the projection optical system 86B. In addition, in FIG. 34, the projection optical system 86B only holds the aperture stop AS and shows two lenses. However, in reality, a plurality of lenses are arranged between the pattern generator 84 and the aperture stop AS. A plurality of lenses are arranged between the diaphragm AS and the photoelectric conversion surface 54 a of the photoelectric element 54.

In addition, the projection optical system 86B satisfies the conditions of Sain and Fluo regarding the light receiving surface 84d corresponding to the object surface and the photoelectric conversion surface 54a corresponding to the image surface. In the second type configuration, since the optical axis AXo extends in the vertical direction, it is easy to install the projection optical system 86B. However, since the photoelectric conversion surface 54a is inclined with respect to the horizontal plane (XY plane), if the photoelectric conversion surface 54a is set to be perpendicular to the subsequent optical axis AXe of the electronic optical system 70, the optical axis AXe of the electronic optical system 70 Inclined with respect to the vertical direction.

In the structure of the first type and the structure of the second type, as shown in FIG. 35, the light is incident on the exit side (transparent substrate member 56 corresponding to the transparent plate member 56 in the above-mentioned embodiment) 56 disposed in a parallel plane plate shape ( The light exit side: the lower side of FIG. 35) The main light ray Ch of the light on the photoelectric conversion surface (corresponding to the photoelectric conversion surface of the alkali photoelectric layer 60 in the above embodiment) 54a does not depend on the position of the photoelectric conversion surface 54a. The angles are the same as each other, but are not perpendicular to the photoelectric conversion surface 54a. In addition, in FIG. 35, the illustration of the light-shielding film (pinhole) 58 provided between the transparent substrate 56 and the photoelectric conversion surface 54 a is omitted for clarity of illustration.

In this case, for example, the optical path lengths in the transparent substrate 56 are different between the upper peripheral light UPML and the lower peripheral light UNML and the main light Ch, so that a coma aberration occurs. In the structure of the first type and the structure of the second type, in order to correct the coma aberration caused by the oblique incidence on the photoelectric conversion surface 54a, as shown in FIG. 36, the surface on the incident side of the transparent substrate 56a is corrected. (The surface on the right in FIG. 36) is orthogonal to the optical axes AXo of the projection optical systems 86A and 86B, and the transparent substrate 56a may be formed into a non-parallel planar plate shape, that is, a wedge-shaped 稜鏡 shape. In addition, in FIG. 36, a window glass 56A for a vacuum partition having a form of a parallel flat plate is arranged on the incident side of the transparent substrate 56a. In addition, it is not limited to the case where the surface of the incident side of the transparent substrate 56a is orthogonal to the optical axis AXo of the projection optical systems 86A and 86B, and the surface of the incident side of the transparent substrate 56a may be set to be opposite to the transparent substrate 56a. The exit side surface (photoelectric conversion surface 54a) is not parallel.

Alternatively, as shown in FIG. 37, when the surface on the incident side and the surface on the exit side of the transparent substrate 56b must be configured in parallel, it may be formed as a vacuum arranged at intervals on the incident side of the transparent substrate 56b. The method of dividing the window glass 56B on the entrance side (the right side surface in FIG. 37) with the optical axes AXo of the projection optical systems 86A and 86B, and the exit side surface (the left side surface in FIG. 37). The line is inclined with respect to the optical axis AXo on the paper surface of FIG. 37. In other words, by forming the transparent substrate 56b into a parallel plane plate shape and forming the window glass 56B into a wedge shape, the coma aberration caused by the oblique incidence to the photoelectric conversion surface 54a can be corrected. The window glass 56A, 56B as the second transparent substrate is located at the boundary between the vacuum space of the electron optical system 70 and the external environment. In addition, even in a case where it is not necessary to configure the surface on the incident side and the surface on the emission side of the transparent substrate 56b to be parallel, the surface on the incidence side of the window glass 56B for the vacuum partition wall and the projection optical system 86A may be formed The optical axis AXo of 86B is orthogonal, and the normal of the surface on the exit side thereof (the left surface in FIG. 37) is inclined with respect to the optical axis AXo in the paper surface of FIG. 37.

In addition, although illustration is omitted, aspherical optical surfaces may be introduced into the projection optical systems 86A and 86B. The aspherical optical surfaces have a coma shape that can be generated by oblique incidence to the photoelectric conversion surface 54a. Aberration-corrected shape. The number of the aspherical optical surfaces is not limited to one. The method of FIG. 36 in which the transparent substrate 56b is formed into a wedge shape may be combined with the method of introducing an aspherical optical surface into the projection optical systems 86A and 86B, or the window glass 56B may be formed in a wedge shape. The method of FIG. 37 is combined with the method of introducing an aspherical optical surface into the projection optical systems 86A and 86B, thereby correcting the coma aberration caused by the oblique incidence to the photoelectric conversion surface 54a.

In the third type configuration, as shown in FIG. 38, the light receiving surface 84d of the pattern generator 84 is arranged such that its normal line is inclined with respect to the optical axis AXo of the projection optical system 86C on the paper surface (YZ plane) in FIG. 38. However, the photoelectric conversion surface 54a is disposed orthogonal to the optical axis AXo of the projection optical system 86C. Specifically, the optical axis AXo of the projection optical system 86C extends in the vertical direction (Z direction), and the photoelectric conversion surface 54a is arranged along the horizontal plane (XY plane). Further, in order to ensure an optical conjugate relationship between the light receiving surface 84d and the photoelectric conversion surface 54a, the projection optical system 86C includes at least one optical member 86Ca that is eccentrically arranged with respect to the optical axis AXo thereof. In addition, in FIG. 38, the projection optical system 86C holds only the aperture stop AS and only two lenses are shown. In reality, a plurality of lenses are arranged between the pattern generator 84 and the aperture stop AS. A plurality of lenses are arranged between the aperture stop AS and the photoelectric conversion surface 54 a of the photoelectric element 54.

That is, the optical member 86Ca is eccentrically disposed with respect to the optical axis AXo of the projection optical system 86C. The optical axis of the optical member 86Ca may be detached from the optical axis AXo of the projection optical system 86C (for example, decentered in the Y direction), or may be inclined with respect to the optical axis AXo of the projection optical system 86C, or may be combined. In the third type of configuration, since the optical axis AXo extends in the vertical direction, installation of the projection optical system 86C is easy. In addition, since the photoelectric conversion surface 54a is arranged along the horizontal plane, if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system 70, the optical axis AXe of the electron optical system 70 and the vertical The directions are the same, and the setting of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set vertically with respect to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced.

In addition, in FIG. 38, the optical member 86Ca disposed eccentrically with respect to the optical axis AXo of the projection optical system 86C is an optical member between the aperture stop AS and the photoelectric conversion surface 54a of the photoelectric element 54, but it may be used instead of or In addition to this, the optical member between the light receiving surface 84d of the pattern generator 84 and the aperture stop AS is eccentrically disposed with respect to the optical axis AXo of the projection optical system 86C. The number of optical members arranged eccentrically is not limited to one, and a plurality of optical members may be arranged eccentrically.

In the fourth type configuration, as shown in FIG. 39, the normals of the light receiving surface 84d and the photoelectric conversion surface 54a of the pattern generator 84 are parallel to the optical axis AXo of the projection optical system 86D, and are parallel to the optical axis AXo of the projection optical system 86D. They are arranged separately in the Y direction. In other words, the normal of the reflective surface of the plurality of reflective elements (for example, the strip 84b) of the pattern generator 84 is parallel to the optical axis AXo of the projection optical system 86D, and in the YZ plane including the optical axis AXo of the projection optical system 86D, The optical axis AXo of the projection optical system 86D is arranged separately. The optical axis AXo of the projection optical system 86D extends in the vertical direction (Z direction), and the light receiving surface 84d and the photoelectric conversion surface 54a are arranged along the horizontal plane (XY plane). The light receiving surface 84d and the photoelectric conversion surface 54a are optically conjugated via a projection optical system 86D. In addition, in FIG. 39, the projection optical system 86D holds only the aperture stop AS and only two lenses are shown. Actually, a plurality of lenses are arranged between the pattern generator 84 and the aperture stop AS. A plurality of lenses are arranged between the diaphragm AS and the photoelectric conversion surface 54 a of the photoelectric element 54.

In the fourth type configuration, since the optical axis AXo extends in the vertical direction, installation of the projection optical system 86D is easy. In addition, the emission side (photoelectric conversion surface 54a side) of the projection optical system 86D is telecentric, but it is non-telecentric on the incident side (light receiving surface 84d side). Therefore, the pattern generator 84 is used to further make the light receiving surface 84d toward the Moving in the Z direction can correct (adjust) the magnification of the projection optical system 86D. In addition, since the photoelectric conversion surface 54a is arranged along the horizontal plane, if the photoelectric conversion surface 54a is set perpendicular to the optical axis AXe of the subsequent electron optical system 70, the optical axis AXe of the electron optical system 70 and the vertical The directions are the same, and the setting of the electron optical system 70 is easy. In this case, since the photoelectric conversion surface 54a is set vertically with respect to the optical axis AXe of the electron optical system 70, the burden of aberration correction of the electron optical system 70 can be reduced.

The projection optical systems 86A to 86D according to the first to fourth types have a plurality of reflective elements, and project a plurality of light beams from the pattern generator 84 that generates a plurality of light beams by using light from the illumination optical system to the photoelectricity. The photoelectric conversion surface 54 a of the element 54. In other words, the projection optical systems 86A to 86D optically conjugate the light receiving surface 84d of the pattern generator 84 and the photoelectric conversion surface 54a, and project a plurality of light beams from the pattern generator 84 onto the photoelectric conversion surface 54a.

In the structures of the first to third types, the normal of the light receiving surface 84d of the pattern generator 84 is inclined with respect to the optical axis AXo in the YZ plane including the optical axes AXo of the projection optical systems 86A to 86C. In the fourth type configuration, the pattern generator 84 is disposed separately from the optical axis AXo of the projection optical system 86D. However, the first to fourth types of structures have in common that the main light rays on the pattern generator 84 side, that is, the main light rays of the reflected light from the pattern generator 84 are included in the optical axis AXo of the projection optical systems 86A to 86D. The YZ plane is inclined with respect to the normal of the light receiving surface 54a. As a result, the reflected light from the light-receiving surface 84d of the pattern generator 84 subjected to oblique incidence illumination can be efficiently guided to the photoelectric conversion surface 54a through the projection optical systems 86A to 86D, and the reflected light from the light-receiving surface 84d can be further guided. Effectively taken into projection optical systems 86A ~ 86D.

In addition, the first to fourth types of structures have in common that the main rays of light incident on the photoelectric conversion surface 54a do not depend on the position of the photoelectric conversion surface 54a, but have a certain angle. As a result, even if the position of the photoelectric conversion surface 54a is shifted in the direction of the optical axis AXo of the projection optical systems 86A to 86D, the positional deviation of the photoelectric conversion surface 54a can bring the imaging performance of the projection optical systems 86A to 86D. The influence is suppressed to be small. In other words, even if the position of the photoelectric conversion surface 54a is shifted in the direction of the optical axis AXo, the collapse of the light pattern formed on the photoelectric conversion surface 54a can be suppressed. Further, the shape of the irradiation area of the electron beam formed on the wafer through the electron optical system 70 can be set to a desired shape. In particular, in the structures of the third and fourth types, the main rays of light incident on the photoelectric conversion surface 54a do not depend on the position of the photoelectric conversion surface 54a, but are perpendicular to the photoelectric conversion surface 54a. As described above, since the projection optical systems 86C and 86D are telecentric on the exit side, the influence of the positional shift of the photoelectric conversion surface 54a on the imaging performance of the projection optical systems 86C and 86D can be suppressed to be smaller.

In addition, as described above, in the first, third, and fourth types of structures, the photoelectric conversion surface 54a is arranged along the horizontal plane. This means that the optical axis AXe of the subsequent electronic optical system 70 can be made to coincide with the vertical direction, and its optical axis AXe can be set vertically with respect to the photoelectric conversion surface 54a. As a result, the burden of aberration correction in the electro-optical system 70 can be reduced, the design can be made easier, and the mechanism can be simplified.

Next, an illumination system 82 that illuminates the light receiving surface 84d of the pattern generator 84 at oblique incidence will be described. In the above embodiment, when GLV is used as the pattern generator 84, it is necessary that the light receiving surface 84d has an elongated rectangular field (slit) in the X direction orthogonal to the paper surface (YZ plane) of FIG. 11 (A). A plurality of light fields are formed at intervals in a direction orthogonal to the X direction (the Y direction when the light receiving surface 84d is arranged along the XY plane). Furthermore, in order to perform electron beam processing well, for example, electron beam exposure, it is required that uniform illumination is performed from an oblique direction without depending on the position on the light receiving surface 84d of the pattern generator 84. Here, uniformly illuminating the light-receiving surface 84d means: making the illumination in each slit-shaped field substantially uniform; setting the shape of each field to a desired slit shape; between all the fields, Uniformity of illumination, shape, lighting NA, etc. In addition, of course, it is also possible to make the illuminance, shape, and NA of the illumination equal to a predetermined error range among all the illumination fields.

Hereinafter, for easy understanding, a basic configuration of an illumination optical system in which a plurality of slit-shaped light fields are formed at intervals on an illuminated surface orthogonal to the optical axis AXi of the illumination system 82 will be described. For the illumination optical system 182A shown in FIG. 40, laser light is intermittently supplied from the light source section 82a. In FIG. 40, the z1 axis is set along the optical axis AXi of the illumination optical system 182A, and the y1 axis is set in a direction perpendicular to the paper surface of FIG. 40 in a plane orthogonal to the optical axis AXi, and orthogonal to the paper plane of FIG. 40. Set the x1 axis in the direction. Between the local coordinates (x1, y1, z1) and the overall coordinates (X, Y, Z) of FIG. 11 (A), the x1, y1, and z1 axes correspond to the X, Y, and Z axes, respectively.

The light source section 82a includes a light emitting section having a rectangular shape that is elongated in the x1 direction orthogonal to the paper surface (y1z1 plane) in FIG. 40. As the light source section 82a, for example, a semiconductor laser light source with high coherence can be used. Specifically, as described above, as the light source unit 82a, for example, a laser diode 88 that continuously oscillates laser light with a wavelength of 365 nm and an AO deflector 90 may be used, and the laser light with a wavelength of 365 nm may be emitted intermittently ( Laser beam). Alternatively, as the light source section 82a, a light source section that causes the laser diode 88 to emit light intermittently may be used. In addition, the light source unit 82a may continuously supply laser light. In this case, a shutter may be provided on the emission side of the light source section 82a.

The illumination optical system 182A sequentially includes a collimator optical system 182a from the light source section 82a toward the illuminated surface 82c orthogonal to the optical axis AXi; the optical integrator 182b, It has a plurality of wavefront division elements (for example, micro lenses) 182ba arranged side by side along the x1y1 plane orthogonal to the optical axis AXi; and a Fourier transform optical system 182c, which is to be illuminated by the illumination light on the exit side of the optical integrator 182b The light beam coming from the pupil is condensed so as to be superimposed on the illuminated surface 82c. Here, the Fourier conversion optical system 182c may also set the relationship between the illumination pupil and the illuminated surface as optical Fourier conversion. The illumination pupil may be optically conjugated to the exit pupil of the illumination optical system 182A, or may be optically conjugated to the aperture stop of the projection optical system 86A. The optical integrator 182b may be referred to as a fly-eye lens system. The Fourier conversion optical system 182c may also be referred to as a condensing optical system.

In the illumination optical system 182A, the light from the light source section 82a passes through the collimator optical system 182a to become a substantially parallel light beam, and enters the optical integrator 182b. The light beam incident on the optical integrator 182b is subjected to wavefront division by a plurality of wavefront division elements 182ba, and one light source image is formed on the exit side of each wavefront division element 182ba. That is, on the illumination pupil located on the exit side of each of the wavefront division elements 182ba of the optical integrator 182b, an elongated rectangular light source image is formed in the x1 direction. That is, in the illumination pupil of the illumination optical system 182A, a plurality of rectangular light source images elongated in the x1 direction are formed. In addition, the plurality of light source images formed on the illumination pupil of the illumination optical system 182A are not limited to those having an elongated rectangular shape, and may be, for example, an oval shape or an oval shape.

The light beams from the plurality of light source images formed on the illumination pupil of the illumination optical system 182A are focused by the Fourier conversion optical system 182c so as to overlap the illuminated surface 82c. That is, the Fourier conversion optical system 182c constitutes a condensing optical system that condenses a light beam from a plurality of light source images formed on the illumination pupil on the illuminated surface 82c. As a result, the light beam passing through each of the wavefront division elements 182ba forms interference fringes in the y1 direction. As shown in FIG. 41, as shown in FIG. 41, a plurality of slit-shaped photofields 82ca elongated in the x1 direction are tied in the y1 direction. Formed at intervals. In this way, the light source section 82a has a light emitting section whose length in the x1 direction is longer than that in the y1 direction, and its interference property is higher in the y1 direction than in the x1 direction.

In the illumination optical system 182A shown in FIG. 40, a wavefront-divided optical integrator 182b is used. However, as shown in FIG. 42, a diffractive optical element 182d may be used instead of the optical integrator 182b. The diffractive optical element 182d is an optical element that diffracts light from the light source unit 82a and emits a plurality of light beams having discretely different angles with respect to the optical axis AXi of the illumination optical system 182B. As the diffractive optical element 182d, for example, a diffractive optical element such as a dammann diffraction grating (dammann diffraction grating) can be used.

In the illumination optical system 182B shown in FIG. 42, the light from the light source unit 82 a passes through the collimator optical system 182 a to become a substantially parallel light beam, and enters the diffractive optical element 182 d. The plurality of light beams passing through the diffractive optical element 182d and having discretely different angles with respect to the optical axis AXi are respectively focused at different positions in the illuminated surface 82c by the Fourier transform optical system 182c. In this case, the Fourier conversion optical system 182c constitutes a condensing optical system for condensing a plurality of light beams from the diffractive optical element 182d on the illuminated surface 82c. As a result, as shown in FIG. 41, a plurality of slit-shaped photofields 82ca elongated in the x1 direction are formed at intervals in the y1 direction. In other words, the diffractive optical surface of the diffractive optical element 182d is designed to form a plurality of slit-shaped light fields in the far-field area (far-field area) when substantially parallel incident light beams are incident; When the diffractive optical element 182d and the Fourier conversion optical system 182c are used in combination, a plurality of slit-shaped light fields formed in the far-field area (far-field area) are formed on the surface with a limited distance from the diffractive optical element. Typically, Is the illuminated surface. As a result, a plurality of slit-shaped photofields 82ca as shown in FIG. 41 are formed on the illuminated surface 82c.

In the case where the illuminated surface 82c is orthogonal to the optical axes AXi of the illumination optical systems 182A and 182B, it is relatively easy to form a plurality of slit-shaped photofields 82ca as shown in FIG. 41, and to perform it on the illuminated surface 82c. Even lighting. However, in the above-mentioned embodiment, in order to separate the light path before and after the reflective pattern generator 84, it is required to use the lighting system 82 to uniformly illuminate the light receiving surface 84d of the pattern generator 84 from an oblique direction. In other words, in order to separate the light paths before and after the light receiving surface 84d as the illuminated surface, it is required to uniformly illuminate the illuminated surface which is not perpendicular to the optical axis AXi of the lighting system 82 from the oblique direction.

FIG. 43 is a diagram illustrating a defect that occurs when the illuminated surface 82c is not perpendicular to the optical axis AXi in the illumination optical system 182A shown in FIG. 40. However, in FIG. 43, the structure from the optical integrator 182 b to the illuminated surface 82 c is shown for the sake of clarity of the drawing, and the illustration of the collimator optical system 182 a is omitted. The point that the illustration of the collimator optical system 182a is omitted is the same in the related FIGS. 44 and 46 to 49.

In FIG. 43, the positions P1 and P2 where the light groups 301 and 302 emitted from the plurality of light source images formed on the illumination pupil on the exit side of the optical integrator 182b are focused at the first and second angles, respectively, And the position P3 condensed by the light group 303 that is emitted parallel to the optical axis AXi (emitted at the third angle) from the plurality of light source images is aligned along the optical axis AXi direction. In other words, the plane including the positions P1 to P3 is perpendicular to the optical axis AXi. As a result, when there is a light-condensing position P3 on the illuminated surface 82c inclined with respect to the optical axis AXi of the illumination optical system 182A, the light-condensing position P1 is located on the rear side of the illuminated surface 82c (or Front side), the light-condensing position P2 is located on the front side (or the rear side) of the illuminated surface 82c.

In this case, the width of the slit-shaped field of field 82ca formed at the light-concentrating position P3 of the illuminated surface 82c (the dimension of the y2-axis direction orthogonal to the x1 axis on the illuminated surface 82c: the y2-axis is not As shown in the figure, there is a concern that the width of the slit-shaped light field 82ca at the positions corresponding to the light-condensing positions P1 and P2 of the illuminated surface 82c is increased. This means that the illuminance of the slit-shaped light field 82ca formed at the positions corresponding to the light-concentration positions P1 and P2 is reduced compared to the illuminance of the slit-shaped light field 82ca formed at the light-concentrating position P3. Moreover, it means that there is a concern that the illuminated surface 82c cannot be uniformly illuminated from the viewpoint of shape and illuminance. There is a further concern that, compared to the pupil intensity distribution associated with the light beam reaching the light-condensing position P3, the pupil intensity distribution associated with the light beams reaching the light-condensing positions P1 and P2 becomes a fuzzy pupil intensity distribution.

In this way, in order to uniformly illuminate the illuminated surface 82c inclined with respect to the optical axis AXi, it is required to: make the position of the condensing point of the light incident on the illuminated surface 82c close to the illuminated surface 82c; The position of the light condensing point of the light incident on the illuminated surface 82c is aligned with the illuminated surface 82c. In other words, it is required to make the plane defined by the light-condensing point of the light incident on the illuminated surface 82c coincide with the illuminated surface 82c. FIG. 44 shows that in the illumination optical system 182A shown in FIG. 43, a wedge-shaped ridge 182e is attached to the optical path between the Fourier conversion optical system 182c and the illuminated surface 82c, so that the position of the light collecting point is close to the illuminated surface. Diagram of the state of 82c.

45 (a) and 45 (b), the optical action of the wedge-shaped ridge 182c will be described below. In FIGS. 45 (a) and (b), in order to make the description easy to understand, a right-angled triangular shape having a surface with an incident side orthogonal to the optical axis AXi, a refractive index n, and a wedge angle (apex angle) α is used. Wedge-shaped 稜鏡 182f. In this case, as shown in FIG. 45 (a), the irradiated surface 82c is inclined only with respect to the wedge angle α of the wedge 稜鏡 182f with respect to the extension axis AXx of the optical axis AXi of the illumination optical system. The angle (emission angle) α 'of the optical axis AXi which is bent by the action of the wedge-shaped 稜鏡 182f with respect to the surface of the exit side of the wedge-shaped 稜鏡 182f is α ′ = arc sin (n × sinα). It is shown that, with respect to the optical axis AXi on the rear side of the wedge 轴 182f, the inclination angle of the normal to the illuminated surface 82c also becomes α '.

In this way, in the illumination optical system 182A of FIG. 44, the optical path between the Fourier transform optical system 182c and the illuminated surface 82c is provided with a wedge angle corresponding to the tilt of the illuminated surface 82c with respect to the optical axis AXi. The wedge-shaped ridge 182e can bend the optical axis AXi by only the required angle, so that the position of the light-converging point of each light beam approaches the illuminated surface 82c. Here, the wedge angle corresponding to the inclination of the illuminated surface 82c with respect to the optical axis AXi may have a refractive index and wedge angle corresponding to the inclination of the illuminated surface 82c with respect to the optical axis AXi. In other words, the illumination optical system 182A can use the wedge-shaped ridge 182e in the optical path between the Fourier transform optical system 182c and the illuminated surface 82c to bring the plane defined by the converging point of each light beam closer to the illuminated surface 82c. In this case, the wedge-shaped ridge 182e constitutes a light-condensing point adjustment member that brings the position of the light-condensing point of the light incident on the illuminated surface 82c through the optical integrator 182b and the Fourier conversion optical system 182c closer to the illuminated surface. (Further, the light receiving surface 84d of the pattern generator 84) 82c. In addition, the Fourier conversion optical system 182c and the wedge 稜鏡 e 182e constitute a condensing optical system 182j, which condenses a light beam from a plurality of light source images formed on an illumination pupil located on the exit side of the optical integrator 182b to be illuminated. Surface 82c.

In this way, the wedge-shaped ridge 182e as the focusing point adjustment member has a wedge angle corresponding to the inclination of the illuminated surface 82c with respect to the optical axis AXi of the illumination optical system 182A. In addition, the wedge-shaped ridge 182e has a function of making the position of the condensing point of each light beam close to the irradiated surface 82c, and making the first exit from the illumination pupil located on the exit side of the optical integrator 182b in the first direction. The length of the optical path from the illumination pupil to the illuminated surface 82c of one beam and from the illumination pupil to the illuminated surface 82c of the second beam emitted from the illumination pupil in a second direction different from the first direction The optical path length is the same. In addition, of course, in the wedge 稜鏡 182e, it is not necessary to make the optical path length from the illumination pupil to the illuminated surface 82c of the first beam exactly the same as the optical path length from the illumination pupil to the illuminated surface 82c of the second beam. The difference between the optical path length of the first light beam from the illumination pupil to the illuminated surface 82c and the optical path length of the second light beam from the illumination pupil to the illuminated surface 82c may be reduced.

In addition, as shown in FIG. 46, instead of or in addition to the wedge-shaped ridge 182e having a wedge angle corresponding to the inclination of the illuminated surface 82c, a thickness along the optical axis AXi of the illumination optical system 182A may be used on the paper surface of FIG. A step plate 182g that changes stepwise in the vertical direction (y1 direction) of the y1z1 plane) is used as a focusing point adjusting member. In this case, the Fourier conversion optical system 182c and the step plate 182g constitute a condensing optical system 182j, which condenses the light beams from a plurality of light source images formed on the illumination pupil located on the exit side of the optical integrator 182b to On the illuminated surface 82c. If necessary, a wedge-shaped ridge 182e and a step plate 182g may be combined to form a focusing point adjusting member.

Alternatively, as shown in FIG. 47, instead of or in addition to the wedge-shaped 稜鏡 e 182e or the step plate 182g, a Fourier-transformed optical device may be used in order to bring the condensing point of the light incident on the illuminated surface 82c closer to the illuminated surface 82c. The system 182c is eccentrically arranged in the vertical direction (y1 direction) of the paper surface (y1z1 plane) in FIG. 47. Alternatively, although illustration is omitted, in order to make the position of the light-condensing point of light from a plurality of light source images close to the irradiated surface 82c, the surface of the incident side of each wavefront division element 182ba of the optical integrator 182b may be formed Its center normal is inclined with respect to the optical axis AXi of the illumination optical system 182A on the paper surface of FIG. 43.

However, if ray tracing is performed as shown in FIG. 45 (b), it can be seen that coma aberration and astigmatism occur due to the wedge 182e. If coma aberration or astigmatism occurs due to the wedge-shaped ridge 182e, the required illuminance, required shape, and the like related to each slit-shaped field of field 82ca cannot be obtained, and there is a concern that uniform illumination becomes difficult. Therefore, in the case of using the wedge-shaped ridge 182e (or the step plate 182g) as the focusing point adjustment member, it is possible to correct the coma aberration or astigmatism caused by the wedge-shaped 182e or the like. Hereinafter, an aberration correction member that corrects aberrations caused by the wedge 182e (or the step plate 182g) will be described with reference to FIGS. 48 and 49.

In the configuration shown in FIG. 48, the light path between the optical integrator 182b and the Fourier conversion optical system 182c includes illumination on the exit side of the optical integrator 182b in front of the Fourier conversion optical system 182c, and more specifically, A pupil illumination space includes a first aberration generating member 182ha that generates astigmatism, and a second aberration generating member 182hb that generates coma aberration. Here, the illumination pupil space may refer to a space where an illumination pupil is formed in the optical path of the optical system, and it may also be an optical member adjacent to the light entrance side of the illumination pupil and adjacent to the light exit side of the illumination pupil. The space between the optical components. The first aberration generating member 182ha generates astigmatism using an optical surface having an aspherical shape defined by the Zernike function represented by Z5 in order to correct the astigmatism generated by the wedge 182e. In addition, the second aberration generating member 182hb generates a coma using an aspherical optical surface defined by the Zernike function represented by Z7 to correct the coma aberration generated by the wedge 182e. Aberration.

Specifically, the so-called Zernike function represented by Z5 refers to the function related to the fifth term in the Zernike polynomial using the polar coordinate system; the so-called Zernike function represented by Z7 refers to the Zernike function. Function related to item 7 in the polynomial. For details of the Zernike function or the Zernike polynomial, refer to, for example, US Patent No. 7,405,803. In FIG. 48, the first aberration generating member 182ha, the second aberration generating member 182hb, the Fourier conversion optical system 182c, and the wedge 182e constitute a condensing optical system 182j, which is formed on the exit side of the optical integrator 182b. The light beams from the plurality of light source images on the illumination pupil are condensed on the light receiving surface 84d of the pattern generator 84 as the illuminated surface.

In the configuration shown in FIG. 48, a first aberration correcting member 182h including a first aberration generating member 182ha that generates astigmatism and a second aberration generating member 182hb that generates coma aberration is used. Both coma aberration and astigmatism caused by 182e are corrected. As a result, the light condensed on the light-receiving surface 84d of the pattern generator 84 which is the surface to be irradiated forms a point-like light spot, and the width of each slit-shaped light field 82ca can be narrowed to the required size and uniform. . In the configuration shown in FIG. 48, the first aberration generating member 182ha and the second aberration generating member 182hb are provided in the illumination pupil space, but the first aberration generating member 182ha and the second aberration generating member 182hb It may also be installed in different spaces, for example, between a plurality of optical members constituting the Fourier conversion optical system 182c or between the Fourier conversion optical system 182c and the illuminated surface 82c. In addition, at least one optical surface of the plurality of optical components constituting the Fourier conversion optical system 182c may be a surface shape that generates astigmatism, and an optical component having the optical surface may be used as the first aberration generating component 182ha. At least one optical surface of the plurality of optical components constituting the Fourier conversion optical system 182c is set to a surface shape that generates a coma aberration, and an optical component having the optical surface is used as a second aberration generating component 182hb.

In the configuration shown in FIG. 49, instead of the first aberration correcting member 182h of FIG. 48, an unfocused (or eccentric) afocal arrangement in the vertical direction (y1 direction) of the paper surface (y1z1 plane) of FIG. 49 is used. The optical system 182k serves as a third aberration generating means for generating a coma aberration. That is, the afocal optical system 182k is provided as a second aberration correcting member in the optical path between the optical integrator 182b and the Fourier conversion optical system 182c. More specifically, the afocal optical system 182k is included in the optical integrator 182b. Illumination pupil in the illumination pupil space. In FIG. 49, a second aberration correcting member 182k, a Fourier conversion optical system 182c, and a wedge 稜鏡 e 182e constitute a condensing optical system 182j, which is composed of a plurality of illumination pupils formed on the exit side of the optical integrator 182b. The light beam from the light source image is condensed on a light receiving surface 84d of the pattern generator 84 as an illuminated surface.

In the configuration shown in FIG. 49, only a coma aberration caused by the wedge 182e is corrected using a second aberration correction member composed of an eccentric afocal optical system 182k that generates a coma aberration. The light condensed on the light receiving surface 84d of the pattern generator 84 which is the illuminated surface is formed into an elongated linear image light spot in a direction (x1 direction) orthogonal to the paper surface of FIG. 49, which can further make each slit shape The width of Zhaoye 82ca is narrow to the required size and uniform. In addition, instead of or in addition to the eccentric afocal optical system 182k, at least one of the plurality of optical components constituting the Fourier conversion optical system 182c may be decentered from the optical axis AXi or inclined with respect to the optical axis AXi to produce Desired coma aberration. In addition, the eccentric afocal optical system 182k shown in FIG. 49 can be used in combination with the second aberration correction member 182hb shown in FIG. 48, and the eccentric afocal optical system 182k shown in FIG. 49 and the first 1 aberration correction member 182ha is used in combination.

In addition, in FIG. 43, FIG. 44, and FIG. 46 to FIG. 49, based on the illumination optical system 182A using the wavefront division type optical integrator 182b, the functions of the focusing point adjusting means and the aberration correcting means will be described. The same applies to the illumination optical system 182B using the diffractive optical element 182d, and the above-mentioned condensing point adjustment member or aberration correction member can be applied. In this case, it is sufficient to understand that the wavefront division type optical integrator 182b in FIG. 43, FIG. 44, and FIG. 46 to FIG. 49 is replaced with a diffractive optical element 182d.

As described above, the illumination optical systems 182A, 182B include a condensing optical system 182j, which emits a first light beam (e.g. Light group 301) and a second light beam (for example, light group 302 or 303 in FIG. 43) emitted from the illumination pupil in a second direction different from the first direction, and the relative light The light-receiving surface 84d of the pattern generator 84 which is arranged with the axis AXi and the normal line tilted performs oblique incident illumination. The condensing optical system 182j includes a condensing point adjustment member 182e (182g, etc.) that makes the light condensing position in the direction of the optical axis AXi of the first light beam different from the light condensing position in the direction of the optical axis AXi of the second light beam. In other words, the condensing optical system 182j includes a condensing point adjustment member 182e that brings a plane including the light condensing position in the direction of the optical axis AXi of the first light beam and the light condensing position in the direction of the optical axis AXi of the second light beam closer to the illuminated surface. .

The first light beam and the second light beam from the condensing optical system 182j are condensed at a first point on the light receiving surface 84d and a second point different from the first point. As the condensing point adjustment member, a wedge-shaped ridge 182e having a wedge angle corresponding to the inclination of the light-receiving surface 84d with respect to the optical axis AXi can be used. The wedge 稜鏡 182e has a reduced optical path length of the first light beam from the illumination pupil on the exit side of the optical integrator 182b to the light receiving surface 84d, and a light path length of the second light beam from the illumination pupil to the light receiving surface 84d. Poor functionality.

Instead of or in addition to the wedge-shaped 稜鏡 182e serving as a focusing point adjustment member, the thickness along the optical axis AXi may be used in a direction transverse to the optical axis AXi (for example, the y1 direction in FIG. 46). The difference is 182g. The condensing optical system 182j has an aberration correction member 182h (or 182k), which corrects aberrations caused by a condensing point adjustment member such as a wedge 182e or a step plate 182g. The aberration correcting member 182h (182ha, 182hb) has an aspherical optical surface that generates at least one of coma aberration and astigmatism. The aberration correction member 182k has an afocal optical system that is decentered in a direction transverse to the optical axis AXi.

Alternatively, the condensing optical system 182j includes at least one optical member 182c, which is different from the light condensing position in the direction of the optical axis AXi of the first light beam and the light converging position in the direction of the optical axis AXi of the second light beam. The axis AXi is eccentrically arranged, and specifically has a Fourier conversion optical system 182c that is eccentrically arranged in a direction transverse to the optical axis AXi (for example, the y1 direction in FIG. 47). Alternatively, in the condensing optical system 182j, the center normal of the surface on the incident side of each wavefront division element 182ba of the optical integrator 182b may be made relative to the light in a predetermined plane (the y1z1 plane in FIG. 47). The axis AXi is inclined so that the light-condensing position in the direction of the optical axis AXi of the first light beam is different from the light-condensing position in the direction of the optical axis AXi of the second light beam.

In other words, the illumination optical systems 182A and 182B include condensing optics for condensing a first light beam reaching a first position on the light receiving surface 84d of the pattern generator 84 and a second light beam reaching a second position on the light receiving surface 84d. The system 182j illuminates the light-receiving surface 84d arranged obliquely with respect to the optical axis AXi so that the normal line is inclined. Further, the condensing optical system 182j has a wedge e182e having an apex angle (wedge angle) in a direction in which the normal of the light-receiving surface 84d is inclined with respect to the optical axis AXi as the direction of the optical axis AXi of the first light beam. A light-condensing point adjusting member that is different from the light-condensing position in the direction of the optical axis AXi of the second light beam.

In other words, the illumination optical systems 182A and 182B include a condensing optical system 182j, which emits a first light beam emitted from an illumination pupil located on the exit side of the optical integrator 182b in the first direction, and from the illumination pupil. Condensing a second light beam emitted in a second direction different from the first direction; and the condensing optical system 182j includes a condensing point adjustment member 182e (182g, etc.), which is disposed on the light receiving surface 84d including the pattern generator 84 In the space, the condensing position in the direction of the optical axis AXi of the first light beam is different from the condensing position in the direction of the optical axis AXi of the second light beam.

In the above-mentioned illumination optical systems 182A and 182B, the condensing optical system 182j includes a condensing point adjustment member that separates the condensing position in the direction of the optical axis AXi of the first light beam and the condensing position in the direction of the optical axis AXi of the second light beam. 182e (182g, etc.), so that the light-condensing point adjustment member 182e (182g, etc.) can be used to make the light-condensing position of each light beam close to the light-receiving surface 84d of the pattern generator 84, which can be further aligned with respect to the optical axis. The light-receiving surface 84d, which is arranged in an inclined manner with AXi, is uniformly illuminated, and good electron beam processing such as electron beam exposure can be performed.

In the above-mentioned illumination optical systems 182A and 182B, when a wedge-shaped 稜鏡 e 182e or a step plate 182g is used as the focusing point adjustment member, the aberration generated by the wedge-shaped 稜鏡 e 182e or the step plate 182g is used. The corrected aberration correction member 182h (or 182k) is attached to the condensing optical system 182j, and can illuminate the light receiving surface 84d arranged at an angle with respect to the optical axis AXi more uniformly, and can perform better. Electron beam processing, such as electron beam exposure.

As described above, the light source unit 82a, the illumination optical system 182A (or 182B), the pattern generator 84, and the projection optical system 86A (or 86B, 86C, 86D) constitute a light irradiation device 80 for irradiating light to the photoelectric element 54. That is, the illumination optical system 182A (or 182B) and the projection optical system 86A (or 86B, 86C, 86D) are optically connected with the pattern generator 84 interposed therebetween.

FIG. 50 is a diagram schematically showing a state where the projection optical systems 86A (86B, 86C) of the first to third types are connected to the illumination optical system 182A (182B) according to the so-called V-bend type. In the configuration example shown in FIG. 50, light from the illumination optical system 182A (182B) (not shown) is reflected by the mirror 98 for bending the optical path, and then the light receiving surface 84d of the pattern generator 84 is obliquely incident and illuminated. The light reflected by the light receiving surface 84d is reflected by the mirror 99 for bending the second optical path, and is then irradiated onto the photoelectric conversion surface 54a of the photoelectric element 54 through the projection optical system 86A (86B, 86C).

In this configuration example, the optical path of the light reflected by the mirror 98 and incident on the light receiving surface 84d and the optical path of the light reflected by the light receiving surface 84d and incident on the mirror 99 are V-shaped. The mirror 99 is a biasing member disposed between the pattern generator 84 and the projection optical system 86A (86B, 86C). Further, the mirror 98 has a first reflecting surface arranged between the illumination optical system 182A (182B) and the pattern generator 84, and the mirror 99 has a first reflecting surface arranged between the pattern generator 84 and the projection optical system 86A (86B, 86C). 2 reflecting surface. Here, the illuminating light from the illuminating optical system 182A (182B) is bent and incident on the first reflecting surface of the pattern generator 84. The light path of the illuminating optical system is not vertically deflected. Therefore, the light receiving surface of the pattern generator 84 ( The illuminated surface is illuminated from the oblique direction with respect to the normal of the light-receiving surface (irradiated surface). In addition, the plurality of beams from the pattern generator 84 are guided to the second reflecting surface on the projection optical system 86A (86B, 86C), and the light path of the projection optical system is not vertically deflected, so the light received from the pattern generator 84 A plurality of beams on the surface (object surface of the projection optical system) are also emitted in an oblique direction with respect to the normal of the light receiving surface (object surface).

Similarly, FIG. 51 schematically shows a state where the projection optical system 86D of the fourth type is connected to the illumination optical system 182A (182B) in accordance with the V-bend type.

FIG. 52 is a diagram schematically showing a state where the projection optical systems 86A (86B, 86C) of the first to third types are connected to the illumination optical system 182A (182B) according to the so-called N-bend type. In the configuration example in FIG. 52, light from the illumination optical system 182A (182B) (not shown) is reflected by the mirror 98 for bending the optical path, and then the light receiving surface 84d of the pattern generator 84 is obliquely incident and illuminated. The light reflected by the light receiving surface 84d is incident on the projection optical system 86A (86B, 86C), and is then irradiated onto the photoelectric conversion surface 54a of the photoelectric element 54.

In this configuration example, the light path of the light incident on the mirror 98 from the illumination optical system 182A (182B), the light path of the light reflected by the mirror 98 and incident on the light receiving surface 84d, and reflected by the light receiving surface 84d and incident The light path to the projection optical system 86A (86B, 86C) forms an N-shape. The mirror 98 is a deflection member disposed between the illumination optical system 182A (182B) and the pattern generator 84. Similarly, FIG. 53 schematically shows a state where the projection optical system 86D of the fourth type is connected to the illumination optical system 182A (182B) in accordance with the N-bend type.

In addition, the present invention can be appropriately modified within a range that does not violate the gist or idea of the present invention read from the scope of the application and the entire specification. The electron beam device, electron beam exposure device, electron beam inspection device, The electron beam processing apparatus and a method for manufacturing a device using the electron beam apparatus are also included in the technical idea of the present invention.

Claims (57)

    An electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the above-mentioned photoelectric element to a target, includes an illumination optical system that illuminates a first surface, and a pattern generator that A plurality of reflecting elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that projects the plurality of light beams from the pattern generator onto the photoelectricity The photoelectric conversion surface of the element; and the illumination optical system includes a first light beam emitted from the illumination pupil in a first direction and an exit from the illumination pupil in a second direction different from the first direction A condensing optical system for condensing the second light beam, obliquely incident illumination on the first surface arranged so that a normal line is inclined relative to an optical axis of the illumination optical system; and the condensing optical system has The light spot adjusting member is configured to make a light condensing position in the optical axis direction of the first light beam different from a light condensing position in the optical axis direction of the second light beam.         The electron beam device according to claim 1, wherein the first light beam and the second light beam from the condensing optical system are focused on a first point on the first surface and a second point different from the first point. point.         The electron beam device according to claim 1 or 2, wherein the condensing point adjustment member has a wedge-shaped wedge having a wedge angle corresponding to the inclination of the first surface.         The electron beam device according to claim 3, wherein the wedge shape causes an optical path length of the first light beam from the illumination pupil to the first surface and a length of the optical path from the illumination pupil to the first surface. The optical paths of the second light beams have the same length.         The electron beam device according to claim 1 or 2, wherein the focusing point adjustment member has a step plate having a thickness along the optical axis of the illumination optical system that is different in a direction transverse to the optical axis.         The electron beam device according to any one of claims 1 to 5, wherein the condensing optical system has an aberration correction member that corrects aberrations caused by the condensing point adjustment member.         The electron beam device according to claim 6, wherein the aberration correction member has an aspherical optical surface and generates at least one of coma aberration and astigmatism.         The electron beam device according to claim 6 or 7, wherein the aberration correction member has an afocal optical system that is eccentric in a direction that crosses an optical axis of the illumination optical system.         The electron beam device according to claim 1 or 2, wherein the condensing optical system has at least one optical member, so that the condensing position in the optical axis direction of the first light beam and the light of the second light beam The way in which the light-condensing positions in the axial direction are different is arranged eccentrically with respect to the optical axis of the illumination optical system.         The electron beam device according to claim 9, wherein the first surface is a second surface including an optical axis of the illumination optical system and a direction transverse to the optical axis, and a normal line thereof is relative to the illumination optical system. The optical axis of the system is arranged so that it is inclined, and the optical member is eccentrically arranged in the transverse direction.         The electron beam device according to claim 1 or 2, wherein the first surface is a second surface including an optical axis of the illumination optical system and a direction transverse to the optical axis, and a normal thereof is relative to the above. The illumination optical system is arranged with the optical axis inclined, and has a plurality of wavefront division elements arranged in parallel in the light path of the light from the light source, and a plurality of light source images that are elongated in the third direction are formed on the illumination light. The surface on the entrance side of each of the wavefront division elements of the optical integrator on the pupil is such that the focusing position of the optical axis direction of the first light beam is different from the focusing position of the optical axis direction of the second light beam. In one aspect, the center normal is inclined with respect to the optical axis of the illumination optical system in the second surface.         An electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the above-mentioned photoelectric element to a target, includes an illumination optical system that illuminates a first surface, and a pattern generator that A plurality of reflecting elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that projects the plurality of light beams from the pattern generator onto the photoelectricity The photoelectric conversion surface of the element; and the illumination optical system includes condensing a first light beam reaching a first position on the first surface and a second light beam reaching a second position on the first surface; An optical system performs oblique incident illumination on the first surface arranged so that a normal line is inclined with respect to an optical axis of the illumination optical system, and the condensing optical system includes a condensing point adjustment member that causes the first light beam The light condensing position in the optical axis direction is different from the light condensing position in the optical axis direction of the second light beam.         The electron beam device according to any one of claims 1 to 4 and 12, wherein the light-condensing point adjustment member has a wedge-shaped ridge, which is the method of the first surface with respect to the optical axis of the illumination optical system. The line has a vertex in the direction in which it is inclined.         An electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the above-mentioned photoelectric element to a target, includes an illumination optical system that illuminates a first surface, and a pattern generator that A plurality of reflecting elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that projects the plurality of light beams from the pattern generator onto the photoelectricity The photoelectric conversion surface of the element; and the illumination optical system includes a condensing optical system that causes the first light beam emitted from the illumination pupil along the first direction, and from the illumination pupil along the first direction. A second light beam emitted from a different second direction is condensed; and the above-mentioned condensing optical system has a condensing point adjustment member that causes the light condensing position in the optical axis direction of the first light beam and the light of the second light beam The focusing position in the axial direction is different.         The electron beam device according to any one of claims 1 to 14, wherein the focusing point adjusting member is disposed in a space including the first surface.         An electron beam device that irradiates light to a photoelectric element and irradiates an electron beam generated from the above-mentioned photoelectric element to a target, includes an illumination optical system that illuminates a first surface, and a pattern generator that A plurality of reflecting elements arranged on the first surface and generating a plurality of light beams by using light from the illumination optical system; and a projection optical system that projects the plurality of light beams from the pattern generator onto the photoelectricity The photoelectric conversion surface of the element; and the illumination optical system performs oblique incidence illumination on the first surface arranged so that a normal line is inclined with respect to an optical axis of the projection optical system.         The electron beam device according to any one of claims 14 to 16, wherein the illumination optical system is obliquely incident on the first surface arranged so that a normal line is inclined with respect to an optical axis of the illumination optical system. illumination.         The electron beam device according to any one of claims 1 to 17, wherein the illumination optical system includes: an optical integrator having a plurality of wavefront division elements arranged in parallel in a light path of light from a light source, and A plurality of light source images elongated in the third direction are formed on the illumination pupil; and a condensing optical system that focuses light beams from the plurality of light source images on the first surface; and because of the first surface, Among them, interference fringes are formed in a fourth direction orthogonal to the third direction, and a plurality of the rectangular fields of light elongated in the third direction are formed at intervals in the fourth direction.         The electron beam device according to any one of claims 1 to 17, wherein the illumination optical system includes: a diffractive optical element that diffracts light from a light source and emits light relative to an optical axis of the illumination optical system. A plurality of light beams having discretely different angles; and a condensing optical system that condenses the plurality of light beams from the diffractive optical element on the first surface; and a slender rectangular shape in the third direction A plurality of the photofields are formed at intervals in a fourth direction orthogonal to the third direction on the first surface.         The electron beam device according to any one of claims 1 to 19, wherein the main ray of the reflected light from the pattern generator is in a second surface including the optical axis of the projection optical system, with respect to the first surface The normal of the face is inclined.         The electron beam device according to claim 20, wherein the first surface and the photoelectric conversion surface are arranged so that their normals are inclined on the second surface with respect to the optical axis of the projection optical system.         The electron beam device according to claim 21, wherein the projection optical system satisfies a condition of Sain Flow with respect to the first surface and the photoelectric conversion surface.         The electron beam device according to claim 21 or 22, wherein the photoelectric conversion surface is horizontally arranged, and an optical axis of the projection optical system is inclined with respect to a vertical direction.         The electron beam device according to claim 21 or 22, wherein an optical axis of the projection optical system extends in a vertical direction, and the first surface and the photoelectric conversion surface are inclined with respect to a horizontal direction.         The electron beam device according to any one of claims 21 to 24, wherein the photoelectric conversion surface is formed on a surface on the exit side of the transparent substrate, and the surface on the incident side of the transparent substrate is the light from the projection optical system. The axes are orthogonal.         The electron beam device according to any one of claims 21 to 24, wherein the photoelectric conversion surface is formed on a surface on an emission side of a transparent substrate having a form of a parallel plane plate, and is disposed on an incidence side of the transparent substrate. On the second transparent substrate, the surface on the incident side of the second transparent substrate is orthogonal to the optical axis of the projection optical system, and the normal to the surface on the output side is inclined with respect to the optical axis of the projection optical system.         The electron beam device according to claim 26, further comprising an electron optical system for irradiating an electron beam generated from the photoelectric element onto a target, and the second transparent substrate is located between a vacuum space of the electron optical system and an external environment. On the border.         The electron beam device according to any one of claims 25 to 27, wherein the projection optical system has at least one aspherical optical surface.         The electron beam device according to claim 28, wherein the photoelectric conversion surface is formed on a surface on the exit side of the transparent substrate, and the at least one aspherical optical surface reduces aberrations generated by the transparent substrate.         The electron beam device according to claim 20, wherein the photoelectric conversion surface is disposed so as to be orthogonal to the optical axis of the projection optical system, and the projection optical system is eccentrically disposed with respect to the optical axis of the projection optical system At least 1 optical component.         The electron beam device according to claim 30, wherein the first surface is arranged such that a normal line thereof is inclined with respect to an optical axis of the projection optical system in the second surface, and the optical member is disposed with respect to the above. The optical axis of the projection optical system is eccentrically arranged.         The electron beam device according to claim 30 or 31, wherein an optical axis of the at least one optical member is eccentric from an optical axis of the projection optical system.         The electron beam device according to any one of claims 30 to 32, wherein an optical axis of the at least one optical member is inclined with respect to an optical axis of the projection optical system.         The electron beam device according to claim 20, wherein a normal line of the plurality of reflection elements of the pattern generator is parallel to an optical axis of the projection optical system, and is in the second plane to an optical axis of the projection optical system. Configured separately.         The electron beam device according to any one of claims 18 to 34, wherein the light source has a light-emitting portion whose length in the third direction is longer than that in the fourth direction.         The electron beam device according to claim 35, wherein the interference property of the light source is higher in the fourth direction than in the third direction.         The electron beam device according to any one of claims 1 to 36, further comprising a deflection member disposed between the illumination optical system and the projection optical system.         The electron beam apparatus according to claim 37, wherein the deflecting member is disposed between the pattern generator and the projection optical system.         The electron beam device according to claim 37, wherein the deflecting member includes: a first reflecting surface arranged between the illumination optical system and the pattern generator; and a second reflecting surface arranged in the pattern generator And the above-mentioned projection optical system.         An illumination optical system for illuminating an illuminated surface with light from a light source. The illumination optical system includes a condensing optical system that emits a first light beam emitted from an illumination pupil in a first direction and the illumination light. The second light flux emitted from the pupil in a second direction different from the first direction is focused on the first surface of the irradiated surface which is arranged so that the normal line is inclined with respect to the optical axis of the illumination optical system. 1st position and 2nd position; and the above-mentioned condensing optical system includes a condensing point adjusting member that condenses the light condensing position in the optical axis direction of the first light beam and the light converging position in the optical axis direction of the second light beam different.         An illumination optical system for illuminating an illuminated surface with light from a light source. The illumination optical system includes a condensing optical system that is emitted from an illumination pupil to reach a normal line relative to the optical axis of the illumination optical system. The first light beam at the first position on the illuminated surface and the second light beam that is emitted from the illumination pupil and reaches the second position on the illuminated surface are arranged in an inclined manner; and The condensing optical system includes a condensing point adjustment member that makes a light condensing position in the optical axis direction of the first light beam different from a light condensing position in the optical axis direction of the second light beam.         An illumination optical system for illuminating an illuminated surface with light from a light source. The illumination optical system includes a condensing optical system that emits a first light beam emitted from an illumination pupil in a first direction and the illumination light. A second light beam emitted from the pupil in a second direction different from the first direction is condensed at a first position and a second position on the illuminated surface, respectively; and the condensing optical system includes a condensing point adjustment member, This makes the light condensing position in the optical axis direction of the first light beam different from the light condensing position in the optical axis direction of the second light beam.         An illumination optical system for illuminating an irradiated surface with light from a light source. The illuminating optical system includes a condensing optical system that emits a first light beam from an illumination pupil and reaches a first position on the irradiated surface. And condensing a second light beam emitted from the illumination pupil and reaching a second position on the illuminated surface; and the condensing optical system includes a condensing point adjustment member that causes an optical axis of the first light beam The focusing position in the direction is different from the focusing position in the optical axis direction of the second light beam.         The illumination optical system according to any one of claims 40 to 43, wherein the illumination optical system is obliquely incident illumination on a first surface arranged so that a normal line is inclined with respect to an optical axis of the illumination optical system. .         An illumination optical system that illuminates an illuminated surface by using light from a light source. The illumination optical system includes an optical integrator having a plurality of wavefront division elements arranged in parallel in the optical path of the light from the light source. A plurality of light source images elongated in the first direction are formed on the illumination pupil; and a condensing optical system that focuses light beams from the plurality of light source images on the illuminated surface; and because of the illuminated surface, Among them, interference fringes are formed in a second direction orthogonal to the first direction, and a plurality of elongated rectangular shaped fields in the first direction are formed at intervals in the second direction.         The illumination optical system according to claim 45, wherein the irradiated surface is a predetermined plane including the optical axis of the illumination optical system and the second direction, and a normal thereof is relative to the optical axis of the illumination optical system. And the condensing optical system emits a first light beam emitted from the optical integrator in a third direction and a light beam emitted from the optical integrator in a fourth direction different from the third direction. The second light beam is condensed and has a condensing point adjustment member that makes the light condensing position in the optical axis direction of the first light beam different from the light converging position in the optical axis direction of the second light beam.         The illumination optical system according to any one of claims 40 to 46, wherein the first light beam and the second light beam from the light condensing optical system are condensed at a first point on the irradiated surface and the first point One point is different from the second point.         The illumination optical system according to any one of claims 40 to 44 and 46, wherein the focusing point adjustment member has a wedge-shaped wedge having a wedge angle corresponding to the inclination of the illuminated surface.         The illumination optical system according to claim 48, wherein the wedge shape makes the optical path length of the first light beam from the illumination pupil to the illuminated surface and the length of the optical path from the illumination pupil to the illuminated surface The optical paths of the second light beams have the same length.         The illumination optical system according to any one of claims 40 to 44, 46, 48, and 49, wherein the focusing point adjustment member has a step plate having a thickness along the optical axis of the illumination optical system in the second section. Different directions.         The illumination optical system according to any one of claims 40 to 44, 46, 48 to 50, wherein the above-mentioned condensing optical system has an aberration correction member that adds aberrations caused by the above-mentioned condensing point adjustment member. Amended.         The illumination optical system according to claim 51, wherein the aberration correction member has an aspherical optical surface and generates at least one of coma aberration and astigmatism.         The illumination optical system according to claim 51 or 52, wherein the aberration correction member has an afocal optical system that is decentered with respect to an optical axis of the illumination optical system.         The illumination optical system according to any one of claims 40 to 44, 46, 48 to 53, wherein the illuminated surface is a predetermined plane including the optical axis of the illumination optical system and the second direction, The normal line is arranged so as to be inclined with respect to the optical axis of the illumination optical system; and the condensing optical system is configured to emit a first light beam emitted from the optical integrator in a third direction and along the optical integrator. Condensing a second light beam emitted in a fourth direction different from the third direction, and having at least one optical member, so that the condensing position in the optical axis direction of the first light beam and the light of the second light beam The arrangement of the light-condensing positions in the axial direction is eccentric in the second direction.         The illumination optical system according to any one of claims 40 to 44, 46, 48 to 54, wherein the irradiated surface is a predetermined surface including the optical axis of the illumination optical system and the second direction, The normal line is arranged so as to be inclined with respect to the optical axis of the illumination optical system; the condensing optical system is configured to emit a first light beam emitted from the optical integrator in a third direction and along the optical integrator from the optical integrator. The second light beam emitted from the fourth direction different from the third direction is focused; and the surface of the incident side of each wavefront division element of the optical integrator is to condense the position of the first optical beam in the optical axis direction. In a method different from the light condensing position in the optical axis direction of the second light beam, the center normal is inclined with respect to the optical axis of the illumination optical system in the predetermined plane.         An electron beam device comprising: the illumination optical system according to any one of claims 40 to 55; a pattern generator having a plurality of reflective elements which can be individually controlled; and a projection optical system which is to be provided with The light-receiving surfaces of the plurality of reflection elements and the photoelectric conversion surfaces of the photoelectric elements are optically conjugated; and the light-receiving surface disposed on the surface to be irradiated is obliquely incident and illuminated by the illumination optical system, and the projection is performed through the projection. The optical system irradiates light from the light receiving surface to the photoelectric element, and irradiates an electron beam generated from the photoelectric element to a target.         A component manufacturing method comprising a lithography step, comprising: forming a line and space pattern on a target by the lithography step; and using an electron beam device according to any one of claims 1 to 39 and 56, The line pattern constituting the line and the space pattern is cut.