TW201928099A - Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof - Google Patents

Abstract

Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.

Description

Disubstituted alkynyl bis-cobalt hexacarbonyl compound, method of making and using same Cross-references to related applications

The present application is a continuation-in-part of U.S. Patent Application Serial No. Serial No. No. No. No. No. No. No. No. No. No. No. No. No The disclosures are hereby incorporated by reference herein.

The processes described herein are cobalt compounds, cobalt compounds, and compositions for use in depositing cobalt compounds containing cobalt films.

Cobalt-containing films are widely used in semiconductor or electronic applications. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been applied as the main deposition techniques for thin films used in the fabrication of semiconductor devices. These methods enable the formation of conformal films (metals, metal oxides, metal nitrides, metal tellurides, etc.) by chemical reaction of metal-containing compounds (precursors). The chemical reaction takes place On surfaces that may include metals, metal oxides, metal nitrides, metal halides, and other surfaces.

Transition metal films, particularly magnesium, iron, cobalt and antimony, are important for a variety of different semiconductor or electronic applications. For example, cobalt films have attracted interest because of their high magnetic permeability. Cobalt-containing films have been used as copper/low-k barriers, passivation layers, and capping layers for ultra-large scale integrated devices. Cobalt is considered for replacement of copper in integrated circuit wiring and interconnects.

Some cobalt film deposition precursors have been investigated in the art.

US 2016/0115588 A1 discloses a composition comprising a cobalt-containing film and its use in film deposition.

WO 2015/127092 A1 describes the use of vapor-deposited cobalt precursors on substrates, such as in the fabrication of integrated circuits and in thin film products, for forming interconnects, cap structures and large in ALD and CVD processes. Block cobalt conductor.

US 2015/0093890 A1 discloses a metal precursor and a method comprising a metal precursor decomposed on an integrated circuit device and forming a metal from the metal precursor. The metal precursor is selected from the group consisting of (alkynyl) bis-cobalt hexacarbonyl compounds, which are linear or branched chain monovalent hydrocarbon groups having 1 to 6 carbon atoms, a single core. a cobalt carbonyl nitrosonium group, a cobalt carbonyl group bonded to one of boron, indium, bismuth and tin groups, a cobalt carbonyl group bonded to a mononuclear or dinuclear allyl group, and a nitrogen-supporting group Substituted by a cobalt compound.

WO 2014/118748 A1 describes cobalt compounds, synthesis of such cobalt compounds and the use of cobalt compounds for depositing cobalt-containing films.

Keunwoo Lee et al. (Japanese Journal of Applied Physics, 2008, Vol. 47, No. 7, pp. 5396-5399) describes the use of tert-butyl acetylene (dico-hexacarbonyl) by metal organic chemical vapor deposition (MOCVD). (CCTBA) A cobalt film is deposited as a cobalt precursor and a H ₂ reactant gas. The carbon and oxygen impurities in the film decreased as the partial pressure of hydrogen increased, but the minimum amount of carbon in the film was still 2.8 at% at 150 °C. Increasing the deposition temperature results in a high impurity content, and a high membrane resistivity is attributed to excessive thermal decomposition of the CCTBA precursor.

C. Georgi et al. (J. Mater. Chem. C, 2014, 2, 4676-4682) teaches the formation of a cobalt metal film from a (alkynyl) bis-cobalt hexacarbonyl precursor. However, because the films still contain a high degree of carbon and/or oxygen that would result in high electrical resistivity, those precursors are undesirable. There is also no evidence in the literature to support the ability to deposit continuous cobalt films.

JP2015224227 describes a general synthetic process for the production of one of the (alkynyl) bis-cobalt hexacarbonyl compounds. (tert-Butylmethylacetylene) dicobalthexacarbonyl (CCTMA) was used to produce a cobalt film having a low electrical resistivity. However, the film properties relative to (t-butylacetylene) dicobalt hexacarbonyl (CCTBA) were shown to be unchanged. Moreover, (tert-butylmethylacetylene) dicobalt hexacarbonyl is a high melting point (about 160 ° C) solid. A precursor system which is a liquid at a temperature of 100 ° C or less, or more preferably 30 ° C or less is more preferable.

In general, there are limited options in ALD and CVD precursors for delivering high purity cobalt films. In order to improve the uniformity of the film, the continuity of the film, and the electrical properties of the deposited film, it is necessary to develop a novel precursor which is required for a thin, high-purity cobalt film and a bulk cobalt conductor.

Cobalt compounds (or complexes, compounds and complexes are used interchangeably), processes for cobalt compounds, and compositions for depositing cobalt-containing films comprising cobalt metal film precursors; A deposited cobalt-containing film.

Examples of cobalt precursor compounds described herein include, but are not limited to, (alkynyl) bis cobalt hexacarbonyl compounds. Examples of cobalt-containing films include, but are not limited to, cobalt films, cobalt oxide films, cobalt telluride films, and cobalt nitride films. Examples of surfaces for depositing metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, cerium oxide, and cerium nitride.

For some applications, there is a need for a preferred cobalt film nucleation and a lower film resistivity of a thin (1-2 nm) cobalt film deposited using known cobalt deposition precursors. As an example, there is a need for a better nucleation cobalt film on TaN and a lower film resistivity relative to a thin cobalt film deposited using known cobalt deposition precursors.

For other applications, there is a need for selective deposition on certain surfaces. For example, selective cobalt film deposition on a copper metal surface relative to a dielectric surface (eg, SiO ₂ ).

Selective deposition is achieved by the use of a cobalt compound having a ligand that selectively interacts with a surface relative to (vs.) additional surfaces. Alternatively, selective deposition is achieved by selectively reacting a surface with a cobalt compound relative to (vs.) another surface.

In a specific example, the metal deposition rate and/or gold can be achieved by modifying the ligand of the cobalt film precursor to change the dissociation energy of the ligand. It is the influence of membrane purity. One method for altering the dissociation energy of a ligand is to increase or decrease the size of a functional group on a ligand. Furthermore, the number of functional groups on a ligand can alter the dissociation energy of the ligand. An example of an effect on the dissociation energy of a ligand is the change observed from the dissociation energy of an alkynyl ligand from a mono- and di-substituted (alkynyl) bis-cobalt hexacarbonyl complex.

In another embodiment, the melting point of the cobalt film precursor is reduced by changing the functional groups on the alkynyl ligand.

In one aspect, the present invention discloses a disubstituted alkynyl bis-cobalt hexacarbonyl compound having the formula: Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a tertiary alkyl group and R ₂ is selected from A group consisting of a straight chain alkyl group having at least two carbon atoms, an isopropyl group, and an isobutyl group.

In another aspect, the invention discloses a method of synthesizing a disubstituted alkynyl bis-cobalt hexacarbonyl compound, comprising the steps of: adding a disubstituted alkyne to a dicobal octacarbonyl group in a solvent; wherein the disubstituted alkyne has a structure of R ₁ CΞCR ₂ ; wherein R ₁ is a tertiary alkyl group, and R ₂ is selected from the group consisting of a straight chain alkyl group having at least two carbon atoms, an isopropyl group and an isobutyl group; and the second The substituted alkyne is reacted with a dicobalt octacarbonyl group in the solvent to form the disubstituted alkynyl bis-cobalt hexacarbonyl compound.

In still another aspect, the invention discloses a method of depositing a cobalt film on a substrate in a reactor, comprising: providing the substrate to the reactor; providing a cobalt precursor to the reactor; The cobalt precursor is in contact with the substrate; and the cobalt film is formed on the substrate; wherein the cobalt precursor has a disubstituted alkynyl dicobalt of the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ) a carbonyl compound; wherein R ₁ is a tertiary alkyl group and an R ₂ -based straight chain alkyl group; and the substrate is selected from the group consisting of metals, metal oxides, metal nitrides, cerium oxide, cerium nitride, and combinations thereof. Ethnic group.

In still another aspect, the present invention discloses depositing a cobalt-containing film by using a disubstituted alkynylcobalt hexacarbonyl compound having the chemical formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a A tertiary alkyl group, and an R ₂ is a straight chain alkyl group.

In still another aspect, the present invention discloses a method of selectively depositing cobalt on a substrate in a reactor, comprising the steps of: providing the substrate to the reactor, wherein the substrate comprises at least one patterning a dielectric layer and at least one patterned conductive metal layer; performing a pretreatment to remove contaminants from a surface of the substrate comprising at least one surface of the at least one patterned conductive metal layer; providing a cobalt precursor to the a reactor; contacting the cobalt precursor with the substrate; and forming a cobalt-containing film on the substrate; wherein the cobalt precursor has a disubstituted alkyne of the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ) a hexacobalt hexacarbonyl compound; wherein R ₁ is a tertiary alkyl group and R ₂ is a straight chain alkyl group, an isopropyl group and an isobutyl group; and the cobalt-containing film is selectively formed on the at least one patterned conductive metal And a thickness ratio of >1 formed on the layer and formed on the at least one patterned conductive metal layer compared to the cobalt-containing film formed on the at least one patterned dielectric layer.

In still another aspect, the present invention discloses a semiconductor device comprising a substrate having a cobalt-containing film deposited by a method of selectively depositing cobalt on a substrate disclosed in the present invention.

The tertiary alkyl group includes, but is not limited to, t-butyl and t-amyl; and the linear alkyl group includes, but is not limited to, ethyl, n-propyl, n-butyl, n-pentyl, and n-hexyl.

The disubstituted alkynyl bis-cobalt hexacarbonyl compound includes, but is not limited to, (2,2-dimethyl-3-heptyne) bis-cobalt hexacarbonyl (CCTPA), (2,2,6-trimethyl-3) -heptyne) bis-cobalt hexacarbonyl (CCTIBA); (2,2-dimethyl-3-octyne) bis-cobalt hexacarbonyl (CCTNBA); (2,2-dimethyl-3-decyne) bis-cobalt Hexacarbonyl (CCTHA) and (tert-butylmethylacetylene) dicobalthexacarbonyl (CCTMA).

The cobalt-containing film is preferably deposited by using a disubstituted alkynyl bis-cobalt hexacarbonyl compound which is liquid at a temperature of 30 ° C or lower.

The cobalt-containing film includes, but is not limited to, a cobalt film, a cobalt oxide film, a cobalt telluride film, and a cobalt nitride film. The cobalt-containing film contains carbon of less than 2.5 atom%, preferably less than 1.5 atom%, and more preferably less than 0.5 atom%.

The invention will be described hereinafter with the accompanying drawings in which like reference numerals indicate similar elements: Figure 1 shows a monosubstituted alkynyl cobalt complex measured under flowing nitrogen, (3, 3- Thermogravimetric analysis (TGA) of methyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and a series of disubstituted alkynyl cobalt complexes, (tert-butyl R alkynyl) dicobalt hexacarbonyl Superposition of data, where R = methyl (CCTMA), n-propyl (CCTPA), n-butyl (CCTNBA) and n-hexyl (CCTHA).

Figure 2 shows isothermal thermogravimetric analysis of (2,2-Dimethyl-3-octyne)dico-hexacarbonyl (cobalt carbonyl t-butyl N-butylacetylene-CCTNBA) measured at 75 ° C under flowing nitrogen (TGA) information.

Figure 3 shows (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and (2,2-dimethyl-3-octyne) measured in a sealed SS316 DSC pan Comparison of differential scanning calorimetry (DSC) data for dicobalt hexacarbonyl (CCTNBA).

Figure 4 shows the cobalt film resistivity of (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and (4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) The superposition of film thickness.

Figure 5 shows a transmission electron microscope (TEM) image of a cobalt film deposited on SiO ₂ using 4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) as the cobalt film precursor.

Figure 6 shows the use of (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and 4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) as the cobalt film precursor X-ray photoelectron spectroscopy (XPS) data of a cobalt film deposited on SiO ₂ .

The detailed description is to be construed as illustrative and not restricting Rather, the detailed description of the preferred embodiments of the present invention will be described in detail. Various changes in function and component arrangement can be made without deviating The spirit and scope of the present invention are as set forth in the appended claims.

In the scope of the patent application, letters can be used to confirm the method steps of the request (eg, a, b, and c). These letters are used to assist in reference to the method steps and are not intended to indicate the order in which the claimed steps are performed, unless and only to the extent that such order is specifically recited in the scope of the claims.

Described herein are cobalt compounds, processes for making cobalt compounds, and compositions comprising cobalt metal film precursors for depositing cobalt-containing films (eg, cobalt, cobalt oxide, cobalt nitride, cobalt telluride films, etc.) .

Examples of cobalt precursor compounds include, but are not limited to, (alkynyl) bis-cobalt hexacarbonyl compounds.

Examples of surfaces for depositing metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, metal tellurides, antimony, antimony oxide, and antimony nitride.

Examples of cobalt-containing films include, but are not limited to, cobalt, cobalt oxide, cobalt hydride, and cobalt nitride.

One aspect of the invention is a cobalt compound, such as an (alkynyl) bis-cobalt hexacarbonyl compound having the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a tertiary alkyl group, and R ₂ is selected A group of free-standing hydrocarbons having at least two carbon atoms, branched hydrocarbons, and combinations thereof.

In one embodiment of the invention, the alkyl group on the alkynyl ligand is selected to reduce the melting point of the cobalt film precursor. The cobalt film precursor is liquid at a delivery temperature, more preferably at ambient temperature, and preferably at a temperature equal to or less than 30 °C.

In another embodiment of the invention, the cobalt film precursor is in an environment At the temperature is a liquid.

In one embodiment of the invention, the alkyl group on the alkynyl ligand is selected to reduce the ligand dissociation energy (LDE).

In another embodiment of the invention, the alkyl group on the alkynyl ligand is selected to inhibit polymerization of the alkynyl ligand during the cobalt film deposition process.

In another embodiment of the invention, the (alkynyl) bis-cobalt carbonyl compound is synthesized by reaction of an alkynyl group with a dicobalt octacarbonyl group in a suitable solvent (e.g., hexane, tetrahydrofuran, diethyl ether, toluene).

The (alkynyl) bis cobalt carbonyl compound can be purified by distillation under reduced pressure. Alternatively, the (alkynyl) bis-cobalt hexacarbonyl compound can be purified by chromatography on a support such as alumina or cerium oxide. The solid (alkynyl) bis cobalt carbonyl compound can be purified by sublimation under reduced pressure.

A specific example of the present invention is an (alkynyl) bis-cobalt hexacarbonyl compound having the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a tertiary alkyl group, and the R ₂ system has at least two carbons A straight chain alkyl group of atoms. Examples of tertiary alkyl groups include, but are not limited to, tert-butyl and tert-amyl. Examples of linear alkyl groups having at least two carbon atoms are, but are not limited to, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-pentyl and n-hexyl.

A combination of R ₁ and R ₂ functional groups is selected to reduce the melting point of the desired cobalt complex. Combinations of R ₁ and R ₂ functional groups are also selected to provide liquid (alkynyl) bis-cobalt hexacarbonyl compounds with improved thermal stability. Although liquid (alkynyl) dicobalt hexacarbonyl precursors are known in the art, such as CCTBA, these precursors have limited thermal stability. Thermogravimetric analysis is commonly used to compare non-volatile residues formed during evaporation of volatile precursors.

Figure 1 shows a monosubstituted alkynyl cobalt complex measured under flowing nitrogen, (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and a series of disubstituted alkynyl cobalt complexes. Thermogravimetric analysis (TGA) data for (t-butyl R alkynyl) dicobalt hexacarbonyl, where R = methyl (CCTMA), n-propyl (CCTPA), n-butyl (CCTNBA) and n-hexyl (CCTHA).

The TGA analysis in Figure 1 shows that CCTMA, CCTPA, and CCTNBA are lower non-volatile residues and are more thermally stable precursors than CCTBA.

Compared to CCTBA, R ₁ is a tertiary alkyl group and the precursor of R ₂ is a straight chain alkyl group has a lower non-volatile residue at the same temperature. Compared to CCTBA, the only precursor with a similarly higher non-volatile residue is CCTHA, whereas this precursor, compared to CCTBA, evaporates at a higher temperature of about 50 degrees Celsius due to its lower vapor pressure. . Therefore, it still has better thermal stability than CCTBA, since the same non-volatile residue is observed, even if the end point of evaporation is transferred by 50 degrees Celsius to a higher temperature. Differential scanning calorimetry is commonly used to compare the onset of thermal decomposition of precursors.

Figure 3 shows (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and (2,2-dimethyl-3-octyne) measured in a sealed SS316 DSC pan Comparison of differential scanning calorimetry (DSC) data for dicobalt hexacarbonyl (CCTNBA).

Figure 3 shows that the liquid precursor CCTNBA of this invention has a higher decomposition temperature than CCTBA. This comparison shows that CCTBA decomposes exotherm at lower temperatures, while CCTNBA decomposes endotherm at higher temperatures. The improved thermal stability of CCTNBA compared to CCTBA.

The thermal stability of the precursor is extremely important for the reliable delivery of the precursor to the deposition tool. Since CCTBA exhibits a non-volatile residue and an exothermic decomposition at relatively low temperatures during evaporation, its evaporation from the bubbler results in the accumulation of non-volatile residues in the bubbler and CCTBA in the bubbler. Low utilization. Compared to CCTBA, the precursors of the present invention are expected to provide better utilization in the bubbler and better shelf life on the deposition tool.

The reaction of 4,4-dimethyl-2-pentyne with dicobalt octacarbonyl results in the substitution of two CO ligands and one with a bridged 4,4-dimethyl-2-pentyne ligand Formation of a cobalt compound. The chemical structure of the bridged 4,4-dimethyl-2-pentyne ligand shows that the ligand has a tert-butyl group on one side of the carbon-carbon triple bond and a methyl group in the carbon-carbon three On the other side of the key:

The (4,4-dimethyl-2-pentyne) bis-cobalt hexacarbonyl complex (CCTMA) has the following structure:

The (4,4-dimethyl-2-pentyne) bis-cobalt hexacarbonyl complex is a solid at ambient temperature. The melting point of (4,4-dimethyl-2-pentyne) bis-cobalt hexacarbonyl At 160 ° C, it is not a suitable delivery temperature.

Differential scanning calorimetry (DSC) data for (4,4-dimethyl-2-pentyne) bis-cobalt hexacarbonyl showed that the onset of thermal decomposition occurred at a temperature range of 180-200 °C. Therefore, it is impossible to deliver the (4,4-dimethyl-2-pentyne) bis-cobalt hexacarbonyl to a cobalt film deposition process using a cobalt film precursor in a liquid state.

In one embodiment, the reaction of 2,2-dimethyl-3-octyne with dicobaltoctacarbonyl results in the substitution of two CO ligands and one with a bridged 2,2-dimethyl-3-octyl Formation of a bis-cobalt compound of an alkyne ligand. The chemical structure of the bridged 2,2-dimethyl-3-octyne ligand shows that the ligand has a tert-butyl group on one side of the carbon-carbon triple bond and a n-butyl group in the carbon-carbon On the other side of the three keys:

The resulting volatile (2,2-dimethyl-3-octyne) bis-cobalt hexacarbonyl complex can be distilled under vacuum to produce a dark red oil. This cobalt film is a liquid at room temperature and can be delivered to a cobalt film deposition process using a cobalt film precursor in a liquid state. The melting point of (2,2-dimethyl-3-octyne)dico-hexacarbonyl is less than -20 °C.

In another embodiment, the reaction of 2,2,6-trimethyl-3-heptyne with dicobaltoctacarbonyl results in the substitution of two CO ligands and one having a bridge 2,2,6-trimethyl Formation of a bis-cobalt compound of a benzyl-3-heptyne ligand. The chemical structure of the bridged 2,2,6-trimethyl-3-heptyne ligand shows that the ligand has a tert-butyl group on one side of the carbon-carbon triple bond and an isobutyl group in the carbon - On the other side of the carbon three bond:

The (2,2,6-trimethyl-3-heptyne) bis-cobalt hexacarbonyl complex is a solid at ambient temperature. The melting point of (2,2,6-trimethyl-3-heptyne) bis-cobalt hexacarbonyl is above 25 °C.

Thus, even minor changes in the structure of the alkynyl ligand, such as changing one n-butyl to mono-isobutyl, have an effect on the melting point of the (alkynyl)dico-hexacarbonyl.

As the number of carbon atoms increases, the melting point of the (tert-butyl-n-alkylacetylene) dicobalt hexacarbonyl complex generally decreases. However, as shown in Table I, the effect of the number of carbon atoms on the melting point is non-linear.

The cobalt composites or compositions described herein are well suited for use as volatile precursors for ALD, CVD, pulsed CVD, plasma enhanced ALD (PEALD) or plasma enhanced CVD (PECVD) fabrication of semiconductor type microelectronic devices. . Examples of suitable deposition processes for the methods disclosed herein include, but are not limited to, cyclic CVD (CCVD), MOCVD (metal organic CVD), thermal chemical vapor deposition, plasma enhanced chemical vapor deposition ("PECVD"). High-density PECVD, photon-assisted CVD, plasma-photon assisted ("PPECVD"), low temperature chemical vapor deposition, chemically assisted vapor deposition, hot filament chemical vapor deposition, CVD of a liquid polymer precursor, Supercritical fluid deposition, and low energy CVD (LECVD). In some embodiments, the cobalt-containing film is deposited via atomic layer deposition (ALD), plasma enhanced ALD (PEALD), or plasma enhanced cyclic CVD (PECCVD) processes. As used herein, the term "chemical vapor deposition process" refers to the exposure of one of the substrates to one or more volatile precursors that react and/or decompose on the surface of the substrate to produce the desired deposition. Any process. As used herein, "atomic layer deposition process" refers to a self-limiting (eg, the amount of film material deposited in each reaction cycle is constant), the sequential surface chemistry of the deposited material film on substrates of different compositions. . Although precursors, reactants, and sources as used herein may sometimes be described as "gaseous," it is to be understood that the precursor may be liquid or solid, either by direct evaporation, bubbling or sublimation, with or without a Inert gas delivery Inside the reactor. In some cases, the vaporized precursor can pass through a plasma generator. In one embodiment, the metal-containing film is deposited using an ALD process. In another embodiment, the metal-containing film is deposited using a CCVD process. In another embodiment, the metal-containing film is deposited using a thermal CVD process. The term "reactor" as used herein includes, but is not limited to, a reaction chamber or a deposition chamber.

In some embodiments, the methods disclosed herein avoid pre-reaction of the metal precursor by using an ALD or CCVD process that separates the precursor prior to and/or during introduction into the reactor.

In some embodiments, the process uses a reducing agent. The reducing agent is usually introduced in a gaseous state. Examples of suitable reducing agents include, but are not limited to, hydrogen, hydrogen plasma, remote hydrogen plasma, decanes (ie, diethyl decane, ethyl decane, dimethyl decane, phenyl decane, decane, Dioxane, amino decane, chlorodecane), borane (ie, borane, diborane), aluminum hydride, formane, hydrazine, ammonia or mixtures thereof.

The deposition methods disclosed herein may involve one or more purge gases. An inert gas used to purge the purge gas system of unconsumed reactants and/or reaction by-products from the precursor. Exemplary purge gases include, but are not limited to, argon (Ar), nitrogen (N _2), helium (He), neon, and mixtures thereof. In some embodiments, a purge gas, such as argon, is supplied to the reactor at a flow rate of between about 10 and about 2000 sccm for about 0.1 to 10,000 seconds, whereby cleaning may remain in the reactor. The unreacted material and any by-products.

Energy can be applied to the at least one precursor, reducing agent, other A precursor or a combination thereof to initiate the reaction and form the metal-containing film or coating on the substrate. Such energy can be, but is not limited to, heat, plasma, pulsed plasma, spiral plasma, high density plasma, inductively coupled plasma, X-ray, electron beam, photon, remote plasma method and The combination is provided. In some embodiments, an auxiliary RF frequency source can be used to improve the plasma properties of the substrate surface. In a specific example in which the deposit involves plasma, the plasma generation process can include a direct plasma generation process in which the plasma is produced directly in the reactor, or alternatively, a remote plasma generation process Where the plasma is produced outside the reactor and supplied into the reactor.

The cobalt precursors can be delivered to the reaction chamber in a variety of different ways, such as a CVD or ALD reactor. In one embodiment, a liquid delivery system can be used. In an alternate embodiment, a combined liquid delivery and flashing process unit such as, for example, a turbine evaporator manufactured by MSP Corporation of Shores, Minnesota, can be used to deliver low volatility materials in volume. This results in reproducible transport and deposition without thermal decomposition of the precursor. The precursor compositions described in this application can be effectively used as a source reactant in the DLI mode to provide a vapor stream of one of these cobalt precursors into an ALD or CVD reactor.

In some embodiments, these compositions include those utilizing hydrocarbon solvents which are particularly desirable due to their ability to be dried to a sub-ppm level of water. Exemplary hydrocarbon solvents that can be used in the present invention include, but are not limited to, toluene, mesitylene, cumene (isopropylbenzene), p-cumene (4-isopropyltoluene), 1,3. - Diisopropylbenzene, octane, dodecane, 1,2,4-trimethylcyclohexane, n-butylcyclohexane and decalin (decalin). Before this application The drive composition can also be stored in and used in a stainless steel container. In some embodiments, the hydrocarbon solvent in the composition is a high boiling solvent or has a boiling point of 100 ° C or higher. The cobalt precursor composition of the present application can also be mixed with other suitable metal precursors, and the mixture is used to deliver two metals that are simultaneously used for the growth of a binary metal-containing film.

In some embodiments, the gas line from the precursor tank to the reaction chamber is heated to one or more temperatures depending on the process requirements, and the container comprising the composition is maintained in one of the foams. Or multiple temperatures. In other embodiments, a set of cobalt precursor precursors is injected into an evaporator maintained at one or more temperatures for direct liquid injection.

An argon gas and/or other gas stream can be used as a carrier gas to assist in the delivery of at least one cobalt precursor vapor to the reaction chamber during the precursor pulse. In some embodiments, the chamber process pressure is between 1 and 50 Torr, preferably between 5 and 20 Torr.

For many applications, high purity cobalt metal films are a requirement including, but not limited to, low resistivity. It is well known in the art that certain impurities in the cobalt metal film increase the electrical resistivity. These impurities include, but are not limited to, carbon, oxygen, and nitrogen. Therefore, a suitable cobalt metal deposition precursor must be designed to limit the amount of carbon present in the deposited cobalt metal film.

Cobalt compounds having a structural (alkynyl) distincounded hexacarbonyl group have been investigated for use as cobalt deposition precursors. C. Georgi et al. (J. Mater. Chem. C, 2014, 2, 4676-4682) teaches that although in the chemical formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ) complex, R ₁ and R ₂ functions There are a wide variety of variations in the character; where R ₁ or R ₂ can be tertiary (eg, trimethylsulfonyl), linear (eg, n-propyl) or hydrogen, with a high degree in the bulk film. Both carbon and oxygen. In this study, the carbon content was between 2.5-36.5 mol.% and the oxygen content was from 0.8-34.4 mol.%. For solid precursors with a high melting point, the lowest carbon content in this series is 2.5 atomic percent, where R ₁ and R ₂ are trimethylsulfonyl groups. Therefore, the carbon content in the cobalt film deposited using these precursors is similar to the carbon content in the cobalt film deposited from CCTBA, by Keunwoo Lee et al. in Japanese Journal of Applied Physics, 2008, Vol. 47, No. 7, 5396. -5399 described.

The carbon and oxygen content in the deposited film should preferably be less than 2.5 atom%, or more preferably less than 1.5 atom%, and most preferably less than 0.5 atom%. The low carbon content in the film can produce a cobalt metal film with low resistivity without the need for post deposition processing, such as exposing the film to hydrogen or ammonia plasma.

Substrate temperature is an important process variable for depositing high quality cobalt films. Typical substrate temperatures range from about 100 ° C to about 250 ° C. Higher temperatures promote higher film growth rates. Therefore, it is desirable to find a cobalt film precursor capable of depositing a cobalt film at a high temperature without increasing the degree of impurities such as carbon and oxygen.

Compared to precursors which are solid under metal-containing film deposition processes, liquid precursors are preferred under metal-containing film deposition processes and are generally accepted in the art of metal-containing film deposition. Reasons include, but are not limited to, the ability to foam a carrier gas through a metal-containing film precursor under appropriate process conditions. The ability to foam the carrier gas through the metal-containing film precursor can result in a deposition process that delivers the precursor to the metal-containing film, which is more uniform with respect to sublimation of the solid precursor.

Unexpectedly, we have found a precursor of the (alkynyl) bis cobalt carbonyl compound of the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ) of the present invention; wherein R ₁ is a tertiary alkyl group and R ₂ is A group of free linear hydrocarbons, branched hydrocarbons, and combinations thereof is selected to provide a cobalt film having a carbon content as low as 0.4 atomic percent. Without being limited by theory, it is believed to require bulky tertiary alkyl group R ₁ from the center to reduce the cobalt solution alkynyl ligand dissociation energy, thus causing the organic ligands from the cobalt removal center cleaner. Therefore, it is expected that a cobalt film precursor such as (2,2-dimethyl-3-octyne)dico-hexacarbonyl (cobalt carbonyl tert-butyl-n-butylacetylene, CCTNBA) will be shown to be low in the deposited film. The degree of carbon.

As an example, the ligand dissociation of alkynyl ligand removal and CO ligand removal can be calculated as a series of (alkynyl) bis-cobalt hexacarbonyl compounds. BioViaMaterials Studio 7.0 (BLYP/DNP/AE, 4.4 Angstrom orbital cutoff) was used to calculate the reaction energetics at 0 K and the spin state optimization with hand manipulation. Table II shows the use for a series of (alkynyl) The calculated reaction energetics of the dicobalt hexacarbonyl complex removes the alkynyl ligand and the CO ligand. Table II reveals the strong stereoscopic effect of the alkyl group on the alkynyl ligand.

^* Energy is displayed in kcal/mol.

^* CCTBA: (tert-butyl acetylene) dicobalt hexacarbonyl / (tBu) CCH (Co) ₂ (CO) ₆

^* CCMPA: (methylpropyl acetylene) dicobalt hexacarbonyl / (iPr) CC (Me) (Co) ₂ (CO) ₆

^* CCTMA: (tert-Butylmethylacetylene) dicobalt hexacarbonyl / (tBu) CC (Me) (Co) ₂ (CO) ₆

^* CCBTA: [bis(tert-butyl)acetylene) bis-co-hexacarbonyl/(tBu)CC(tBu)(Co) ₂ (CO) ₆

^* CCNBA: (n-butyl acetylene) dicobalt hexacarbonyl / (nBu) CCH (Co) ₂ (CO) ₆

Table II illustrates the important effects of stereoscopic bulk on alkyne ligand dissociation energy (LDE). For example, the LDE of an alkynyl ligand in CCNBA is significantly higher than the LDE of an alkynyl ligand in an isomeric CCTBA. Furthermore, the number of functional groups on a ligand can alter the LDE of the alkynyl ligand. For linear alkyl groups, the calculations shown in Table II indicate that one (disubstituted alkynyl) dicobalt hexacarbonyl complex CCMPA is moderately specific to the LDE of a (monosubstituted alkynyl) dicobalt hexacarbonyl complex CCNBA. cut back.

Without being bound by theory, the salt R ₂ is selected from a group consisting of linear hydrocarbons, branched hydrocarbons, and combinations thereof to provide improved thermal stability to this family of precursors. For example, one of the potential CCTBA decomposition pathways is oligomerization via a monosubstituted alkynyl ligand, tert-butylacetylene. The disubstituted acetylenes of the invention are expected to have a lower oligomerization rate. This property facilitates avoiding the accumulation of decomposition by-products during the delivery of the precursor. In another embodiment, the cobalt-containing film is deposited using Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a tertiary alkyl group, and R ₂ is a straight-chain alkyl group having at least two carbon atoms Or R ₂ is an isopropyl group and an isobutyl group. Examples of tertiary alkyl groups are, but are not limited to, tert-butyl and tert-amyl. Examples of a straight chain alkyl group having at least two carbon atoms are, but not limited to, ethyl, n-propyl, n-butyl, n-pentyl and n-hexyl. (2,2-Dimethyl-3-octyne) bis-cobalt hexacarbonyl (CCTNBA) is a preferred precursor which has a relatively high vapor pressure and good thermal stability due to its liquidity at room temperature. The cobalt film can be grown on a crucible, yttria, PVD tantalum nitride, and copper substrate using the disclosed cobalt composite as a deposition precursor in a reactor.

The thickness of the cobalt film can be measured by X-ray fluorescence (XRF) and scanning electron microscopy (SEM) and transmission electron microscopy (TEM).

For some applications, a precursor having a disubstituted alkynyl ligand is used to selectively deposit a cobalt-containing film on the surface of the conductive metal relative to the surface of the dielectric material.

The conductive metal surface contains copper, cobalt, and rhodium. The conductive metal surface can be pretreated prior to the deposition process to remove contaminants from the conductive metal surface. The contaminant can contain organic impurities and metal oxides. The pretreatment may comprise heating at 100-500 ° C in the presence of a reducing gas such as hydrogen and ammonia. A structure of the conductive metal surface and/or a structure comprising a conductive metal surface exposed to a hydrogen plasma, ammonia plasma, nitrogen plasma, argon plasma or tantalum plasma at 100-500 °C.

The surface of the dielectric material may comprise ceria, fluorosilicate glass (FSG), organosilicate glass (OSG), carbon doped oxide (CDO), or a porous low K-material. Examples of low K-dielectric materials present in the process include porous OSG (organic silicate glass).

The structure comprising the conductive metal surface and the surface of the dielectric material may comprise: a) at least one patterned dielectric material layer embedding conductive metal features (copper, cobalt, tantalum or metal alloy); and b) at least conductive metal features A cobalt layer selectively deposited.

The configuration can further have a metal barrier layer formed between the patterned dielectric material layer and the buried conductive metal features. The metal barrier layer may comprise materials such as tantalum, niobium nitride, titanium, titanium nitride, cobalt, tantalum, and other advanced barrier materials that prevent copper from diffusing into the dielectric material.

This selectivity can be measured by comparison of the thicknesses of the cobalt-containing films deposited on copper and yttria under the same process conditions. The thickness ratio of the cobalt-containing film deposited on the copper relative to the yttrium oxide is preferably greater than 10:1, more preferably greater than 50:1, and most preferably greater than 250:1, measured by XRF, SEM or TEM. get.

In a particular embodiment, the cobalt-containing film deposited from the cobalt precursor of the present invention is annealed to reduce the electrical resistance of the film. In the annealing method, the structure containing the cobalt film is heated to a gas flow containing 3-15% by volume of hydrogen to 300-500 ° C, preferably 375-425 ° C.

Working example

The following examples have shown the disclosed method of making a cobalt composite and depositing a cobalt-containing film using the disclosed cobalt composite as a cobalt precursor.

In the deposition process, the cobalt precursor was delivered to the reactor chamber via a 50 sccm argon gas via a stainless steel vessel filled with a cobalt precursor. The vessel temperature is varied from 30 ° C to 60 ° C to achieve sufficient vapor pressure of the precursor. The wafer temperature varies from between 125 ° C and 200 ° C. The reactor chamber pressure varies from 5 to 20 Torr. The deposition test was carried out in the presence of 500-1000 sccm of hydrogen or a stream of argon. The deposition time was varied from 20 seconds to 20 minutes to achieve different thicknesses of cobalt film.

The cobalt film was grown on tantalum, niobium oxide, PVD tantalum nitride and copper substrates by using a CN-1 showerhead reactor.

The thickness of the cobalt film was measured by X-ray fluorescence (XRF) and scanning electron microscopy (SEM).

Example 1 (comparative) Synthesis and Thermal Properties of (Methyl- ^n- propylacetylene) Dicobalt Hexacarbonyl (CCMPA)/( ⁿ Pr)CC(Me)(Co) ₂ (CO) ₆

In a hood, a solution of 2-hexyne (4.34 g, 53 mmol) in hexane (50 mL) was added over 30 minutes to Co ₂ (CO) ₈ (17 g, 48 mmol) A solution in one of hexanes (100 ml). Moderate CO evolution was observed after addition of each component of the 2-hexyne solution. The resulting dark red/brown solution was stirred at room temperature for 4 hours. The volatiles were removed under vacuum at room temperature to give a dark red oil. The oil was filtered through a pad of diatomaceous earth 545 and distilled under vacuum. The product began to distill at 40 ° C and a pressure of about 200 mTorr. The temperature was slowly increased to 50 ° C (pressure 140 mTorr). The temperature was slowly increased to 55 ° C (pressure 120 mTorr). This temperature was maintained at 55 ° C until the end of the distillation. After all of the volatile CCMPA was evaporated, a very small amount of black solid was coated on the reboiler. The resulting dark red oil was analyzed by infrared spectroscopy, nuclear magnetic resonance, thermogravimetric analysis, and differential scanning calorimetry.

The IR of the solution of pure CCMPA showed approximately 0.07% tetracobalt 12 carbonyl (1860 cm ^-1 ) and no other substantial metal carbonyl peak.

The ¹ H NMR spectrum of the CCMPA showed four sets of resonances and molecular structures with the expected 2/3/2/3 strength [2.5 ppm (m), 2H; 2.3 ppm (s), 3H; 1.5 ppm (m), 2H; 0.8 ppm (m), 3H] matched.

The dynamic thermogravimetric analysis (TGA) of CCMPA was measured under flowing nitrogen.

There appears to be a change in evaporation rate at about 155 ° C, which may indicate the formation of a lower volatility decomposition product. The weight of the last non-volatile residue was 3.1% of the original weight.

Example 2 (comparative) Deposition of cobalt film from CCMPA

The cobalt precursor CCMPA was synthesized and purified as described in Comparative Example 1. The experimental conditions of the cobalt film deposition were as follows: the precursor container temperature was 35 ° C, the wafer temperature was 150 ° C, the chamber pressure was 10 Torr, and the hydrogen flow rate was 500 sccm.

Using the same conditions but using CCTBA as a precursor deposition The film comparison of cobalt film thickness and film properties is shown in Table III. The deposition time of the two precursors was 10 minutes.

Increasing the deposition temperature to 175 °C results in higher impurities in both precursors. Thus, this comparative example shows that the Co ₂ (CO) ₆ (nPrCΞCMe) precursor where R ₁ and R ₂ are not tertiary alkyl provides a cobalt film with a carbon amount (28.2 at%) which is significantly higher than the use. One of the CCTBA precursors is a cobalt film.

Example 3 Synthesis and Thermal Properties of (tert-Butylmethylacetylene) Dicobalt Hexacarbonyl (CCTMA)/(tBu)CC(Me)(Co) ₂ (CO) ₆

In a hood, a solution of 4,4-dimethyl-2-pentyne (5 g, 52 mmol) in hexane (50 mL) was added over 30 minutes to Co ₂ (CO) ₈ (17.0 g, 48 mmol) solution in one of hexanes (150 mL). The evolution of CO was observed after addition of each component of the 4,4-dimethyl-2-pentyne solution. The resulting dark red/brown solution was stirred at room temperature for 4 hours. The volatiles were removed under vacuum at room temperature to give a dark brown solid. The solid was dissolved in approximately 25 mL of hexane and filtered through a pad of celite 545. After removal of the hexane under vacuum, a dark reddish brown solid was obtained. The solid was purified by sublimation under vacuum at 35 ° C (0.6 mTorr).

Solution IR analysis (10% hexane solution) showed one peak of the carbonyl ligand and no peak corresponding to the starting material of dicobalt octacarbonyl.

The ¹ H NMR spectrum of the CCMPA showed two sets of resonances with the expected 1:3 strength matched to the molecular structure [2.3 ppm (s), 1 H; 1.1 ppm (s), 3H].

The dynamic thermogravimetric analysis (TGA) of CCTMA is measured under flowing nitrogen and is shown in Figure 1 along with the data for other cobalt complexes in the present invention.

The evaporation rate appears to have an increase at about 160 ° C, which may indicate a melting point.

The weight of the last non-volatile residue is 0.6% of the original weight. A differential scanning calorimetry of a CCTMA sample verified a melting point of about 160 °C.

Example 4 Preparation of (2,2-dimethyl-3-heptyne) bis-cobalt hexacarbonyl (cobalt carbonyl tert-butyl propyl acetylene-CCTPA)

In a well ventilated hood, a solution of 2,2-dimethyl-3-heptyne (5 g, 40 mmol) in hexane (25 mL) was added over 30 minutes to Co ₂ (CO) A solution of ₈ (12.3 g, 36 mmol) in hexane (75 mL). The evolution of CO was observed after addition of each component of the 2,2-dimethyl-3-heptyne solution. The resulting dark reddish brown solution was stirred at room temperature for 16 hours. The volatiles were removed under vacuum at room temperature to produce a mixture of dark brown solids and liquid. The solid/liquid mixture was dissolved in approximately 50 ml of hexane and filtered through a pad of diatomaceous earth 545. After removal of the hexane under vacuum, a mixture of a dark reddish brown solid and liquid was obtained. The crude material was dissolved in 10 mL of hexane. A column (approximately 3 cm in diameter) was packaged in an 8-inch neutral activated alumina using pure hexane as the extract. The crude material solution was placed on the column and rinsed with hexane. A dark brown band is held at the top of the column, and a bright red band and hexane move quickly below the column. The red band was collected and emptied to dryness to produce a viscous dark red solid.

The ¹ H NMR and ¹³ C NMR analyses of the solid showed a resonance consistent with the expected product.

IR analysis of the hexane solution showed two strong bands of the metal-bound CO ligand at 2050 and 2087 cm ^-1 .

Example 5 Synthesis of 2,2-dimethyl-3-decyne (tert-butyl-n-hexylacetylene)

In a nitrogen glove box, one of the solutions of t-butyl acetylene (3,3-dimethyl-1-butyne) was prepared by placing t-butyl acetylene (5.0 g, 61 mmol) in 100 ml. Prepared in a 500 ml Schlenk flask of anhydrous THF. 24 ml of 2.5 M n-butyllithium was added to a 60 ml addition funnel in hexane (60 mmol). The flask and addition funnel were removed from the glove box and assembled in a hood. The t-butylacetylene solution was cooled to 0 °C. The n-butyllithium solution was added dropwise to the t-butylacetylene solution and stirred for more than 20 minutes. After the addition was completed, the colorless solution was allowed to warm to room temperature and stirred for more than 2 hours. The resulting solution was cooled to 0 °C. 1-Iodohexane (11.4 g, 54 mmol) and 40 mL of anhydrous THF were added to a 60 mL addition funnel. this The solution was added dropwise to the cooled lithium t-butylacetylene solution and stirred for more than 30 minutes. The solution was allowed to warm to room temperature and was stirred at room temperature for more than 2.5 days. The resulting colorless solution was sampled by GC-MS and showed approximately 95% yield of the desired product. Deionized water (100 ml) was added to the solution under nitrogen to form a two-phase mixture. An additional 100 milliliters of hexane is then added to the two phase mixture to promote phase separation. After 10 minutes of stirring, the two phases were separated. The organic layer was extracted using a second 100 ml portion of deionized water prior to separation. The two water washes were combined and extracted with 50 ml of hexane. The organic portion was combined and dried by stirring with anhydrous magnesium sulfate for 30 minutes. The magnesium sulfate was removed by filtration through a glass frit. The resulting clear, colorless solution was distilled under static vacuum to remove the solvent. While maintaining the reboiler temperature at 20 ° C, the condenser at -10 ° C, and the collection flask at -78 ° C (dry ice), the distillation apparatus was vented to approximately 10 Torr and isolated from the vacuum line by closing a valve. The solvent was removed for more than about 1.5 hours leaving about 10 cc of a colorless liquid in the reboiler. The collection flask was removed and another smaller collection flask was installed. The flask was cooled to -78 ° C and the condenser temperature was set to -2 °C. About half of the remaining liquid was transferred to the collection flask under dynamic vacuum (about 1 Torr).

GC-MS analysis showed that 2,2-dimethyl-3-decyne was isolated with >99% purity.

Example 6 Synthesis of (2,2-dimethyl-3-decyne) bis-cobalt hexacarbonyl (cobalt carbonyl t-butyl-n-hexyl acetylene-CCTHA)

In a hood, a solution of 2,2-dimethyl-3-decyne (4.15 g, 25 mmol) in hexane (25 mL) was added over 30 minutes to Co ₂ (CO) ₈ (7.85 g, 23 mmol) solution in one of hexanes (75 mL). Moderate CO evolution was observed after addition of each component of 2,2-dimethyl-3-decyne. The resulting dark reddish brown solution was stirred at room temperature for 4 hours. The volatiles were removed under vacuum at room temperature to produce a dark red liquid with some suspended solids. A column (approximately 3 cm in diameter) was packaged using a 10 inch neutral activated alumina using pure hexane as the extract. 5 ml of pure crude material was placed on the column and rinsed with hexane. A reddish brown belt and hexane quickly move below the column. A small amount of dark matter remains at the top of the column. The reddish brown strip was collected and emptied to approximately 500 mTorr, producing a dark red liquid.

¹ H NMR analysis of the purified CCTHA sample (d8-toluene): 2.66 (m), 1.61 (m), 1.23 (m), 1.17 (s), 0.86 (t).

Example 7 Synthesis of 2,2,6-trimethyl-3-heptyne (tert-butylisobutylacetylene)

In a nitrogen glove box, one of the solutions of t-butyl acetylene (3,3-dimethyl-1-butyne) was prepared by placing t-butyl acetylene (5.0 g, 61 mmol) in 100 ml. Prepared in a 250 ml Schlenk flask of anhydrous THF. 24 ml of 2.5 M n-butyllithium was added to a 60 ml addition funnel in hexane (60 mmol). The flask and addition funnel were removed from the glove box and assembled in a hood. The flask and addition funnel were removed from the glove box and assembled in a hood. The t-butylacetylene solution was cooled to 0 °C. The n-butyllithium solution was added dropwise to the t-butylacetylene solution and stirred for more than 20 minutes. bell. After the addition was completed, the pale yellow solution was allowed to warm to room temperature and stirred for more than 2 hours. The resulting solution was cooled to 0 °C. 1-Iodo-2-methylpropane (9.9 g, 54 mmol) and 20 mL of anhydrous THF were added to a 60 mL addition funnel. This solution was added dropwise to the cooled lithium t-butylacetylide solution and stirred for more than 30 minutes. During the addition, the color changes from light yellow to colorless. The solution was allowed to warm to room temperature and was stirred at room temperature for more than 2 days. GC-MS analysis showed almost complete conversion to the desired product. The solution was extracted with deionized water (2 x 100 mL). The water was extracted with 50 ml of hexane. The organic portion was combined and dried by anhydrous magnesium sulfate for 30 minutes. The solvent was removed by distillation under reduced pressure (about 10 Torr). The remaining colorless liquid was distilled under vacuum (approximately 500 mTorr) into a receiver and cooled to -78 °C.

GC-MS analysis of this product showed the product was collected with >98% purity.

Example 8 Synthesis of (2,2,6-trimethyl-3-heptyne) bis-cobalt hexacarbonyl (cobalt carbonyl t-butyl isobutyl acetylene-CCTIBA)

In a hood, a solution of 2,2,6-trimethyl-3-heptyne (0.95 g, 6.6 mmol) in hexane (15 mL) was added over 20 minutes to Co ₂ (CO) ) ₈ (2.1 g, 6.2 mmol) solution in one of hexanes (45 ml). Moderate CO evolution was observed after the addition of the 2,2,6-trimethyl-3-heptyne solution. The resulting dark brown solution was converted to a dark red color by stirring for 4 hours at room temperature. The volatiles were removed to produce a dark brown solid. 5 ml of hexane was added to produce a dark reddish brown liquid with some suspended solids. A column (approximately 3 cm in diameter) was packaged in an 8-inch neutral activated alumina using pure hexane as the extract. The crude material was placed on a column and rinsed with hexane. A brown strip and hexane move quickly under the column. A small amount of dark purple material is held in the top of the column 1". The reddish brown band is collected and evacuated to a base vacuum (approximately 500 mTorr) on a Schlenk line to produce a viscous dark reddish brown solid.

TGA analysis of CCTIBA by heating from room temperature to 400 °C showed 1.3% non-volatile residue under flowing nitrogen.

¹ H NMR analysis of CCTIBA showed the product to be of high purity (>99%). Chemical shift (d ₈ -toluene): 2.55 (2H, d), 1.80 (1H, m), 1.15 (9H, s), 0.97 (6H, d).

¹³ C NMR analysis of CCTIBA gave the following chemical shifts (d ₈ -toluene): 199.8, 111.6, 98.2, 41.1, 35.4, 31.0, 30.0, 22.2.

Example 9 Synthesis of 2,2-dimethyl-3-octyne (tert-butyl-n-butylacetylene)

In a nitrogen glove box, one of the solutions of t-butyl acetylene (3,3-dimethyl-1-butyne) was prepared by placing t-butyl acetylene (32.8 g, 0.4 mmol) in 500 ml. Prepared in a 1000 mL round bottom flask of anhydrous THF. 150 ml of 2.5 M n-butyllithium was added to a 500 ml addition funnel in hexane (0.375 mmol). The flask and addition funnel were removed from the glove box and assembled in a hood. The t-butylacetylene solution was cooled to 0 °C. The n-butyllithium solution was added dropwise to the t-butylacetylene solution and stirred for more than 30 minutes. After the addition is completed, the colorless solution is allowed to heat to room temperature and stirred. More than 2 hours. 1-Iodobutane (64.4 g, 0.35 mmol) and 100 mL of anhydrous THF were added to a 500 mL addition funnel. This solution was added dropwise to the lithium t-butylacetylide solution and stirred for more than 30 minutes. The solution was stirred at room temperature for 3 days. GC-MS analysis of a small sample showed complete conversion to product. The solution was extracted twice with 100 ml of deionized water. The water wash was extracted with 200 ml of hexane, and the extraction was combined with a THF/hexane solution. The organic solution was dried over anhydrous magnesium sulfate for 30 minutes. During this time, the colorless solution became pale yellow. The combined organic solution was distilled under reduced pressure (about 10 Torr) while maintaining the reboiler at 20 ° C, the condenser at 0 ° C, and the collection flask at -78 °C. After the solvent was removed, another collection flask was charged and the remaining volatiles were distilled while maintaining the reboiler at 20 ° C, the condenser at 0 ° C, and the collection flask at -78 °C. During the second distillation, the pressure system was approximately 2 Torr. When all of the volatiles were transferred, the collection flask was allowed to warm to room temperature. The colorless liquid was analyzed by GC-MS to confirm the presence of a product of high purity (purity >99%, 42.2 g, yield 87%).

¹ H NMR analysis of 2,2-dimethyl-3-octyne gave the following chemical shifts: 2.03 (t, 2H); 1.33 (m, 4H); 1.19 (s, 9H); 0.80 (t, 3H) .

Example 10 Synthesis of (2,2-dimethyl-3-octyne)dicobalthexacarbonyl (cobalt carbonyl t-butyl-n-butylacetylene-CCTNBA)

In a hood, a solution of 2,2-dimethyl-3-octyne (21.5 g, 0.15 mmol) in hexane (100 mL) was added over 30 minutes to Co ₂ (CO) ₈ (47.5 g, 0.14 mmol) solution in one of hexanes (700 mL). After the addition of the 2,2-dimethyl-3-octyne solution, a visible evolution of CO was observed. The resulting dark brown solution was converted to a dark reddish brown color by stirring for 4 hours at room temperature. The hexane was removed using vacuum distillation while maintaining the reboiler at 25 ° C (condenser temperature at -5 ° C, and collecting flask temperature at -78 ° C) to give a dark red liquid with a dark solid. A column (approximately 3 cm in diameter) was packaged in an 8-inch neutral activated alumina using pure hexane as the extract. The crude material was placed on a column and rinsed with hexane. A brown strip and hexane move quickly under the column. The dark purple material was held in the top of the column 2-3". The reddish brown band was collected and evacuated on a Schlenk line (approximately 700 mTorr), yielding 40.0 grams of a dark red liquid.

¹ H NMR analysis of CCTNBA showed high purity (99.6% by NMR). Chemical shift (d ₈ -toluene): 2.66 (t, 2H), 1.60 (m, 2H), 1.29 (m, 2H), 1.17 (s, 9H), 0.86 (t, 3H).

Isothermal thermogravimetric analysis (TGA) of (2,2-dimethyl-3-octyne)dico-hexacarbonyl (cobalt carbonyl tert-butyl-n-butylacetylene-CCTNBA) was carried out under flowing nitrogen at 75 ° C. The measurement and display are shown in Figure 2. The composite gasified in about 200 minutes with 0.55% low non-volatile residue confirming the good thermal stability of the CCTNBA precursor.

Figure 3 shows (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and (2,2-dimethyl-3-octyne) measured in a sealed SS316 DSC pan Comparison of differential scanning calorimetry (DSC) data for dicobalt hexacarbonyl (CCTNBA).

Example 11 Deposition of cobalt film using CCTMA

In the deposition process, CCTMA was delivered to the reactor chamber via a 50 cm cm argon gas via a stainless steel vessel filled with CCTMA. The vessel temperature was varied from 30 ° C to 60 ° C to achieve sufficient vapor pressure of the CCTMA precursor. The substrate temperature varies from between 125 ° C and 200 ° C. The reactor chamber pressure varies from 5 to 20 Torr. The deposition test was carried out in the presence of 500-1000 sccm of hydrogen or a stream of argon. The deposition time was varied from 20 seconds to 20 minutes for reaching cobalt films of different thicknesses (2-70 nm).

Figure 4 shows the cobalt film resistivity of (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and (4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) Stacking of film thicknesses using CCTMA and CCTBA deposited at a substrate temperature of 150 °C.

Figure 4 shows that when the substrate temperature is increased to 175 ° C and 200 ° C, the resistivity of the cobalt film deposited using CCTMA will be reduced to a point where the resistivity of the cobalt film deposited using CCTMA at a substrate temperature of 200 ° C is used. CCTBA deposits a film of the same film thickness at a substrate temperature of 150 ° C by about 50%. In all cases, a film of lower resistivity has a lower carbon content than a film of high resistivity. Thus, the electrical resistivity of the film of the present invention is a function of the residual carbon content of the deposited film.

Figure 4 shows that CCTMA provides a cobalt film with a lower resistivity than a cobalt film deposited from CCTBA.

Figure 5 shows a transmission electron microscope (TEM) image of a cobalt film deposited on SiO ₂ using 4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) as the cobalt film precursor.

Figure 5 shows that a continuous film of cobalt metal can be as low as about 2 nanometers. Rice is formed on the cerium oxide.

The membrane system was deposited from CCTMA and CCTBA, and X-ray photoelectron spectroscopy (XPS) was used to determine the elemental concentration in the entire metal film. The deposition conditions of CCTMA were: precursor delivery temperature = 50 ° C, wafer temperature = 200 ° C, deposition time = 10 minutes. The deposition conditions of CCTBA were: precursor delivery temperature = 35 ° C, wafer temperature = 175 ° C, deposition time = 3 minutes. The cobalt film deposited from CCTBA at 150 °C contains a lower content of carbon, ie 6.2 at%, but the carbon content in the film is still significantly higher than the carbon content (3.7 at%) in the cobalt film deposited from CCTMA at the same temperature. Higher.

Figure 6 shows the use of (3,3-dimethyl-1-butyne) bis-cobalt hexacarbonyl (CCTBA) and 4,4-dimethyl-2-pentyne bis cobalt hexacarbonyl (CCTMA) as the cobalt film precursor X-ray photoelectron spectroscopy (XPS) data of a cobalt film deposited on SiO ₂ .

Figure 6 indicates that the carbon content of the cobalt film deposited on the yttria using CCTMA as the cobalt film precursor has a significantly lower degree of carbon, i.e., 0.4 atom%, than the carbon content (11.1 atom%) of the film deposited using CCTBA as the cobalt film precursor.

The conditions for depositing a cobalt film using CCTMA were: container temperature 50 ° C, wafer temperature = 200 ° C, deposition time = 10 minutes. The conditions for depositing a cobalt film using CCTBA were: container temperature 35 ° C, wafer temperature = 175 ° C, deposition time = 3 minutes.

Example 12 Deposition of a low resistivity cobalt film using CCTNBA

In the deposition process, CCTNBA was delivered to the reactor chamber via 50 sccm of argon via a stainless steel vessel filled with CCTNBA. Process bar The parts are: container temperature 50 ° C, hydrogen flow 50 sccm, pressure 10 Torr. The substrate temperature ranges from 150 ° C to 200 ° C. The substrate is cerium oxide.

Table IIII shows the dependence of film thickness on deposition time and substrate temperature.

The data in Table IIII indicates that higher substrate temperatures result in thicker cobalt films using CCTNBA as the cobalt film precursor.

Example 13 Preparation of CCTMA solution

A solution of CCTMA in hexane was prepared by dissolving CCTMA in hexane while stirring using a magnetic stir bar. 70% weight One of %CCTMA in hexane was prepared by stirring the solid in hexane at 20 °C for 10 minutes.

Example 14 Preparation of CCTPA solution

A solution of CCTPA in hexane was prepared by dissolving CCTPA in hexane while stirring using a magnetic stir bar. A solution of more than 50% by weight of CCTPA in hexane was prepared by stirring the solid in hexane at 20 ° C for 5 minutes.

Example 15 Selective deposition of cobalt film using CCTNBA at 125 ° C

In the deposition process, CCTNBA was delivered to the reactor chamber via 50 sccm of argon via a stainless steel vessel filled with CCTNBA. The process conditions were: container temperature 50 ° C, hydrogen flow 500 sccm, chamber pressure 10 Torr, deposition time 1 minute. The substrate temperature was 125 °C. The substrate is copper metal or hot ruthenium dioxide.

Table V shows the deposition results of cobalt films deposited on copper and ceria using CCTNBA as a cobalt precursor. The selectivity is defined as the ratio of the thickness of the cobalt film on the copper to the thickness of the cobalt film on the ceria. The cobalt film thickness was measured using XRF. The wafer was pre-cleaned at 100 ° C for 1 and 3 minutes with 100, 200 or 500 W of hydrogen plasma.

The average selectivity of the cobalt film thickness on copper to the thickness of the cobalt film on the ceria after 5 experiments was 14.5.

Example 16 Selective deposition of cobalt film using CCTNBA at 150 ° C

In the deposition process, CCTNBA was delivered to the reactor chamber via 50 sccm of argon via a stainless steel vessel filled with CCTNBA. The process conditions were: container temperature 50 ° C, hydrogen flow 500 sccm, chamber pressure 10 Torr, deposition time 1 minute. The substrate temperature was 150 °C. The substrate is copper metal or hot ruthenium dioxide.

Table VI shows the deposition results of cobalt films deposited on copper and ceria using CCTNBA as a cobalt precursor. The selectivity is defined as the ratio of the thickness of the cobalt film on the copper to the thickness of the cobalt film on the ceria. The cobalt film thickness was measured using XRF.

The average selectivity of the cobalt film thickness on copper to the thickness of the cobalt film on the ceria after 5 experiments was 6.2, indicating a lower selectivity at higher deposition temperatures because more cobalt was deposited in the On the electrical material, the cobalt deposited on the metal at the same time did not change.

Example 17 Annealing of a cobalt film formed using CCTNBA

In the deposition process, CCTNBA was delivered to the reactor chamber via 50 sccm of argon via a stainless steel vessel filled with CCTNBA. The process conditions were as follows: container temperature 60 ° C, hydrogen flow 500 sccm, chamber pressure 10 Torr, deposition time 100 minutes. The cerium oxide substrate has a temperature of 125 °C.

The plasma pretreatment of the experimental substrate was carried out under the conditions of a hydrogen flow of 500 sccm, a plasma power of 200 W, a pretreatment time of 3 minutes, and a hydrogen pressure of 1 Torr.

The annealing treatment conditions after deposition were as follows: nitrogen flow 450 sccm, hydrogen flow 50 sccm, temperature 400 ° C, chamber pressure 50 Torr, annealing time 30 minutes.

Table VII shows the effect of annealing on the electrical resistance of the deposited cobalt film. The annealing method reduces the electrical resistance of the cobalt metal film.

Although the principles of the invention have been described in the foregoing preferred embodiments, it is to be understood that

Claims (20)

A method of selectively depositing cobalt on a substrate in a reactor, comprising the steps of: providing the substrate to the reactor, wherein the substrate comprises at least one patterned dielectric layer and at least one patterned conductive metal a pretreatment to remove contaminants from a surface of the substrate comprising at least one surface of the at least one patterned conductive metal layer; providing a cobalt precursor to the reactor; and the cobalt precursor Contacting the substrate; and forming a cobalt-containing film on the substrate; wherein the cobalt precursor is a disubstituted alkynyl bis-cobalt hexacarbonyl compound of the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ a tertiary alkyl group and an R ₂ -based straight chain alkyl group, an isopropyl group and an isobutyl group; and the cobalt-containing film is selectively formed on the at least one patterned conductive metal layer and formed on the at least one patterned The cobalt-containing film of the conductive metal layer has a thickness ratio of >1 compared to the cobalt-containing film formed on the at least one patterned dielectric layer. The method of claim 1, wherein the linear alkyl group is selected from the group consisting of methyl, ethyl, n-propyl, n-butyl, n-pentyl and n-hexyl. The method of claim 1, wherein the disubstituted alkynyl bis cobalt carbonyl hexacarbonyl group The compound is selected from the group consisting of (2,2,6-trimethyl-3-heptyne) bis-cobalt hexacarbonyl (CCTIBA), (2,2-dimethyl-3-octyne) bis-co-hexacarbonyl (CCTNBA), (2,2-dimethyl-3-decyne) dicobalt hexacarbonyl (CCTHA), (2,2-dimethyl-3-heptyne) bis-cobalt hexacarbonyl (CCTPA), (tert-butylmethyl acetylene) A group consisting of dicobalt hexacarbonyl (CCTMA) and (tert-butylmethyl acetylene) dicobalt hexacarbonyl (CCTMA). The method of claim 1, wherein the disubstituted alkynyl bis-cobalt carbonyl hexacarbonyl compound is a liquid compound at a temperature equal to or lower than 30 ° C. The method of claim 4, wherein the disubstituted alkynyl bis-cobalt hexacarbonyl compound is (2,2-dimethyl-3-octyne) distincicohexacarbonyl (CCTNBA). The method of claim 1, wherein the cobalt-containing film is selected from the group consisting of a cobalt film, a cobalt oxide film, a cobalt telluride film, a cobalt nitride film, and combinations thereof, and the cobalt-containing film is selected from the group consisting of thermal CVD. A method of deposition in a group consisting of thermal ALD, plasma enhanced ALD (PEALD), plasma enhanced chemical vapor deposition (PECVD), and plasma enhanced cyclic chemical vapor deposition (PECCVD). The method of claim 1, further comprising the step of annealing the cobalt-containing film on the substrate. The method of claim 1, wherein the at least one patterned conductive metal layer comprises copper; and the at least one patterned dielectric layer comprises at least one selected from the group consisting of yttrium oxide, fluorosilicate glass (FSG), and organic silicate glass A group consisting of (OSG), carbon doped oxide (CDO), or porous low K-material. The method of claim 1, wherein the cobalt-containing film contains less than 2.5 atomic % of carbon. The method of claim 8, wherein the cobalt-containing film contains less than 0.5 atomic % of carbon. The method of claim 1, wherein the pretreating comprises exposing the substrate to a plasma. The method of claim 1, wherein the cobalt-containing film has a thickness ratio greater than or equal to 5. The method of claim 1, wherein the cobalt-containing film has a thickness ratio greater than or equal to 10. A semiconductor device comprising a substrate comprising: (1) at least one patterned dielectric layer having a cobalt-containing film formed on a surface thereof; And (2) having at least one patterned conductive metal layer formed on the surface of the cobalt-containing film; wherein the cobalt-containing film on the substrate is deposited by the method of claim 1. The semiconductor device of claim 14, wherein the cobalt-containing film has a thickness ratio greater than or equal to 5. The semiconductor device of claim 14, wherein the cobalt-containing film has a thickness ratio greater than or equal to 10. A method of depositing cobalt on a substrate in a reactor, comprising the steps of: providing the substrate to the reactor; providing a cobalt precursor to the reactor; contacting the cobalt precursor with the substrate; Forming a cobalt-containing film on the substrate; annealing the cobalt-containing film; and selectively performing a pretreatment to remove contaminants from the surface of the substrate prior to the step of providing a cobalt precursor to the reactor; Wherein the cobalt precursor is a disubstituted alkynyl bis-cobalt hexacarbonyl compound of the formula Co ₂ (CO) ₆ (R ₁ CΞCR ₂ ); wherein R ₁ is a tertiary alkyl group and R ₂ is a straight chain alkyl group, a propyl group and an isobutyl group; the substrate is selected from the group consisting of a metal, a metal oxide, a metal nitride, a cerium, a cerium oxide, a cerium nitride, a TaN, and combinations thereof; and the cobalt-containing film is selected A group consisting of a free cobalt film, a cobalt oxide film, a cobalt telluride film, a cobalt nitride film, and combinations thereof. The method of claim 17, wherein the annealing reduces the electrical resistance of the cobalt-containing film. The method of claim 17, wherein the disubstituted alkynyl bis cobalt carbonyl hexacarbonyl compound is a liquid compound at a temperature equal to or lower than 30 ° C. The method of claim 17, wherein the disubstituted alkynyl bis-cobalt hexacarbonyl compound is (2,2-dimethyl-3-octyne) distincicohexacarbonyl (CCTNBA).