TW201928041A - Butylpyrrolidone based cleaning agent for removal of contaminates from electronic and semiconductor devices - Google Patents

Butylpyrrolidone based cleaning agent for removal of contaminates from electronic and semiconductor devices Download PDF

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TW201928041A
TW201928041A TW107136785A TW107136785A TW201928041A TW 201928041 A TW201928041 A TW 201928041A TW 107136785 A TW107136785 A TW 107136785A TW 107136785 A TW107136785 A TW 107136785A TW 201928041 A TW201928041 A TW 201928041A
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glycol
ether
surfactant
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凱爾 杜耶爾
麥克 比瑟曼
凱文 索西
海利 瓊斯
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美商凱辰公司
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Abstract

A composition effective for removing contaminates from an electronic device either as a concentrated material or when diluted with water. The composition designed for effective removal of undesirable contaminates from an electronic device, including but not limited to, solder flux and polymeric residues. The composition contains butylpyrrolidone and an alkali and has a pH of greater than 7.1 and a pKa less than 12. The composition may contain additional optional solvents and additives to enhance cleaning of articles or to impart other properties to the composition. The composition can be contacted with a surface to be cleaned in a number of ways and under a number of conditions depending on the manufacturing or processing variables present.

Description

用於自電子及半導體裝置移除汙染物之丁基吡咯啶酮系清潔劑 Butyl pyrrolidone detergent for removing contaminants from electronic and semiconductor devices

本發明係關於一種用於自電子及半導體裝置移除汙物、助熔劑、聚合物或其他汙染物之組成物及方法。 This invention relates to a composition and method for removing contaminants, fluxes, polymers or other contaminants from electronic and semiconductor devices.

在電子裝置之製造過程中,存在助焊劑、聚合物、油、油脂、汙物、及其他汙染物,其等係為了容易製造而故意添加,或係不期望地引入至部件。此等汙染物需在某些步驟前或在產品完成後移除。無法自產品完全移除此等汙染物會導致各式各樣的失效,從不美觀到會造成生命損失的災難性產品故障。 During the manufacture of electronic devices, there are fluxes, polymers, oils, greases, contaminants, and other contaminants that are deliberately added for ease of manufacture or are undesirably introduced into the component. These contaminants need to be removed before certain steps or after the product is completed. The inability to completely remove such contaminants from the product can result in a wide variety of failures, from aesthetics to catastrophic product failures that can result in loss of life.

根據本發明,提供一種有效用於移除助焊劑、聚合性殘留物、離子性殘留物及其他不期望汙染物的組成物,其係作為濃縮物料或經水稀釋。該組成物與沖洗及/或乾燥步驟結合,有效地自電子裝置移除包括(但不限於)助焊劑及聚合物的不期望汙染物。術語「電子裝置」包括諸如印刷電路板、陶瓷電子裝置、矽晶圓及其類似物的部件。該組成物包含丁基吡咯啶酮及鹼且具有至少約7.1之pH及小於12之pKa。丁基吡咯啶酮係選自丁基吡咯啶酮:正丁基吡咯啶酮、第二丁基吡咯啶酮、2-甲基-1-丙基吡咯啶酮及第三丁 基吡咯啶酮、及其混合物。應清楚明瞭任何特定的丁基吡咯啶酮可能不是完全純的且可能有其他吡咯啶酮與其混合。該等成分在申請專利範圍之範疇內被視為混合物。丁基吡咯啶酮在本發明組成物中係以介於約0.1與約100%之間的量存在。組成物中所使用之鹼係其量足以使pH介於約7.1與約14之間的胺或氫氧化物。 In accordance with the present invention, a composition effective for removing flux, polymeric residues, ionic residues, and other undesirable contaminants is provided as a concentrated material or diluted with water. The composition, in combination with the rinsing and/or drying steps, effectively removes undesirable contaminants including, but not limited to, fluxes and polymers from the electronic device. The term "electronic device" includes components such as printed circuit boards, ceramic electronic devices, germanium wafers, and the like. The composition comprises butyl pyrrolidone and a base and has a pH of at least about 7.1 and a pKa of less than 12. Butyrrolidone is selected from the group consisting of butyl pyrrolidone: n-butyl pyrrolidone, second butyl pyrrolidone, 2-methyl-1-propyl pyrrolidone and third Pyrrolidone, and mixtures thereof. It should be clear that any particular butylpyrrolidone may not be completely pure and may be mixed with other pyrrolidone. These ingredients are considered to be a mixture within the scope of the patent application. The butyl pyrrolidone is present in the compositions of the present invention in an amount between about 0.1 and about 100%. The base used in the composition is in an amount sufficient to provide an amine or hydroxide having a pH between about 7.1 and about 14.

水可以約0.01至約99.9%之量存於組成物中。 Water can be present in the composition in an amount from about 0.01 to about 99.9%.

視情況,組成物可包括第二溶劑。 The composition may include a second solvent, as appropriate.

本發明亦涵蓋一種藉由使含有助焊劑及/或聚合物之基板與本發明之組成物接觸來移除助焊劑及/或聚合物及其他不期望汙染物的方法。在本文中,「基板」係定義為任何部件或製造電子裝置諸如印刷電路板、陶瓷電子部件或矽晶圓,其受助焊劑及/或聚合物或其他不期望汙染物汙染。 The present invention also encompasses a method of removing flux and/or polymer and other undesirable contaminants by contacting a substrate containing a flux and/or polymer with a composition of the present invention. As used herein, "substrate" is defined as any component or manufacturing electronic device such as a printed circuit board, ceramic electronic component, or germanium wafer that is contaminated with flux and/or polymer or other undesirable contaminants.

視情況,可將表面活性劑添加至濃縮組成物以促進清潔效力。可添加熟悉技藝人士所將知曉之視需要的腐蝕抑制劑、緩衝劑、鉗合劑及/或螯隔劑。濃縮組成物可以純態(100%)使用或經水稀釋以產生如以上所論述的組成物濃度。使用稀釋或濃縮的清潔劑將容許於多種型式的清潔機器及清潔過程中使用清潔劑。當經稀釋時,組成物之濃度係可有效自電子裝置溶解或移除及清潔助焊劑及/或聚合物及其他不期望汙染物的量。應注意除非另外指示,否則於本申請案之說明書及申請專利範圍中的所有濃度係以重量百分比計。 Surfactants may be added to the concentrated composition to promote cleaning efficacy, as appropriate. Corrosion inhibitors, buffers, chelating agents and/or chelating agents as would be known to those skilled in the art can be added as needed. The concentrated composition can be used neat (100%) or diluted with water to produce a composition concentration as discussed above. The use of diluted or concentrated cleaners will allow for the use of cleaning agents in a variety of types of cleaning machines and cleaning processes. When diluted, the concentration of the composition is effective to dissolve or remove and clean the flux and/or polymer and other undesirable contaminants from the electronic device. It should be noted that all concentrations in the specification and claims of this application are by weight unless otherwise indicated.

根據本發明,調配新穎的清潔組成物,其包含丁基吡 咯啶酮及使濃縮清潔組成物之pH成為大於約7.1及pKa小於12之一或多種鹼性劑。視情況,如熟悉技藝人士所知曉,組成物包含一或多種額外溶劑、水、表面活性劑、腐蝕抑制劑、鉗合或螯隔劑、或pH緩衝劑。 According to the invention, a novel cleaning composition comprising butylpyrene is formulated The rancidinone and the pH of the concentrated cleansing composition are one or more alkaline agents having a pH greater than about 7.1 and a pKa of less than 12. Optionally, as known to those skilled in the art, the composition comprises one or more additional solvents, water, surfactants, corrosion inhibitors, clamping or sequestering agents, or pH buffering agents.

使用稀釋或濃縮的清潔劑將容許於多種型式的清潔機器及清潔過程中使用清潔劑。 The use of diluted or concentrated cleaners will allow for the use of cleaning agents in a variety of types of cleaning machines and cleaning processes.

如以上所論述,本發明涵蓋一種濃縮液體清潔組成物,其包含丁基吡咯啶酮及足以產生至少約7.1之pH及小於12之pKa之量的鹼。該組成物可經水稀釋至0.1至99%之濃度。在較佳具體例中,組成物係未經稀釋,意謂清潔劑具有100%之濃度或經水稀釋至5至30%清潔劑濃度。 As discussed above, the present invention contemplates a concentrated liquid cleaning composition comprising butyl pyrrolidone and a base sufficient to produce a pH of at least about 7.1 and a pKa of less than 12. The composition can be diluted with water to a concentration of from 0.1 to 99%. In a preferred embodiment, the composition is undiluted, meaning that the cleaning agent has a concentration of 100% or is diluted with water to a concentration of 5 to 30% detergent.

在另一具體例中,組成物可包含至少一種額外的第二溶劑,其賦予針對不同汙物、助焊劑、聚合物、或其他汙染物的不同溶解度參數。該可選的第二溶劑可以約0.1至約99.9%之量存在。一種可選的第二溶劑係式R1-O-(CxH2xO)n-H之二醇醚,其中:R1係具有1至8個碳原子之烷基,n係介於1與10間之整數,及x係2或3。 In another embodiment, the composition can include at least one additional second solvent that imparts different solubility parameters for different soils, fluxes, polymers, or other contaminants. The optional second solvent can be present in an amount from about 0.1 to about 99.9%. An optional second solvent system R 1 -O-(C x H 2x O) n -H glycol ether, wherein: R 1 is an alkyl group having 1 to 8 carbon atoms, and n is between 1 An integer with 10, and x is 2 or 3.

該二醇醚係選自下列之一或多者:丙二醇甲基醚、二丙二醇甲基醚、三丙二醇甲基醚、丙二醇甲基醚乙酸酯、二丙二醇甲基醚乙酸酯、丙二醇正丙醚、二丙二醇丙基醚、丙二醇丁基醚、二丙二醇丁基醚、三丙二醇丁基醚、聚丙二醇丁基醚、丙二醇苯基醚、丙二醇二乙酸酯、聚丙二醇丁基醚、二乙二醇乙基醚、二乙二醇甲基醚、二乙二醇丁基醚、二乙二醇己基醚、二乙二醇丁基醚乙酸酯、乙二醇 丙基醚、乙二醇正丁基醚、乙二醇己基醚、乙二醇正丁基醚乙酸酯、三乙二醇甲基醚、三乙二醇乙基醚、三乙二醇丁基醚、聚乙二醇丁基醚、乙二醇苯基醚、聚乙二醇乙基醚、及其混合物。 The glycol ether is selected from one or more of the following: propylene glycol methyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether, propylene glycol methyl ether acetate, dipropylene glycol methyl ether acetate, propylene glycol Propyl ether, dipropylene glycol propyl ether, propylene glycol butyl ether, dipropylene glycol butyl ether, tripropylene glycol butyl ether, polypropylene glycol butyl ether, propylene glycol phenyl ether, propylene glycol diacetate, polypropylene glycol butyl ether, two Ethylene glycol ethyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether, diethylene glycol hexyl ether, diethylene glycol butyl ether acetate, ethylene glycol Propyl ether, ethylene glycol n-butyl ether, ethylene glycol hexyl ether, ethylene glycol n-butyl ether acetate, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether , polyethylene glycol butyl ether, ethylene glycol phenyl ether, polyethylene glycol ethyl ether, and mixtures thereof.

其他可選的第二溶劑係諸如醇類、多元醇及亞碸的氧化溶劑,其賦予極性溶解力且亦有助於作為偶合劑。一種可選的第二溶劑具有式:CxHyOzSn,其中:x係介於2與8間之整數,y係介於5與18間之整數,z係1至5,及n係0或1。 Other optional second solvents are oxidizing solvents such as alcohols, polyols, and hydrazine, which impart polar solvency and also aid in acting as a coupling agent. An optional second solvent has the formula: CxHyOzSn, wherein: x is an integer between 2 and 8, y is an integer between 5 and 18, z is 1 to 5, and n is 0 or 1.

此形式的可選溶劑為乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第三丁醇、正戊醇、異戊醇、四氫呋喃甲醇、己醇、環己醇、乙基己醇、乙二醇、丙二醇、甘油、丁二醇、丁三醇、戊二醇、戊三醇及二甲亞碸。 Alternative solvents of this form are ethanol, n-propanol, isopropanol, n-butanol, isobutanol, tert-butanol, n-pentanol, isoamyl alcohol, tetrahydrofuran methanol, hexanol, cyclohexanol, ethyl Hexanol, ethylene glycol, propylene glycol, glycerin, butylene glycol, butyl triol, pentanediol, pentanetriol and dimethyl hydrazine.

鹼係胺或氫氧化物且以足以使pH介於約7.1與約14之間的量存在。另外,材料之pKa小於12.0。較佳地,胺係以介於約0.1及50%之間之量存在的烷醇胺及/或以介於0.01及20%之間之量存在的氫氧化物。更佳地,鹼試劑係以使pH介於約8及約13之間的量存在。 The base amine or hydroxide is present in an amount sufficient to bring the pH between about 7.1 and about 14. In addition, the material has a pKa of less than 12.0. Preferably, the amine is an alkanolamine present in an amount between about 0.1 and 50% and/or a hydroxide present in an amount between 0.01 and 20%. More preferably, the base reagent is present in an amount such that the pH is between about 8 and about 13.

烷醇胺係選自單乙醇胺、二乙醇胺、三乙醇胺、胺甲基丙醇、甲基乙醇胺、甲基二乙醇胺、二甲基乙醇胺、二甘醇胺、甲基乙醇胺、單甲基乙基乙醇胺、二甲胺基丙基胺、胺丙基二乙醇胺、異丙基羥基胺、二甲胺基甲基丙醇、胺乙基丙二醇、胺乙基丙二醇、二甲基胺甲基丙醇參(羥甲基)胺基甲烷、胺基丁醇、二甘醇 胺、二甲胺基丙醇、乙基胺基乙醇、丁基胺基乙醇、二丁基胺基乙醇、丁基二乙醇胺、胺甲基丁醇、羥乙基哌乙磺酸、N-啉基丙磺酸、雙(羥乙基)胺基參(羥甲基)甲烷、丙醇胺、異丙醇胺、二丙醇胺、二異丙醇胺及其組合。鹼氫氧化物係選自氫氧化四甲銨、氫氧化四丁銨、氫氧化四丙銨、氫氧化鈉、或氫氧化鉀。 The alkanolamine is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, amine methylpropanol, methylethanolamine, methyldiethanolamine, dimethylethanolamine, diglycolamine, methylethanolamine, monomethylethylethanolamine. , dimethylaminopropylamine, amine propyl diethanolamine, isopropylhydroxylamine, dimethylaminomethylpropanol, amine ethyl propylene glycol, amine ethyl propylene glycol, dimethylamine methyl propanol ginseng ( Hydroxymethyl)aminomethane, aminobutanol, diglycolamine, dimethylaminopropanol, ethylaminoethanol, butylaminoethanol, dibutylaminoethanol, butyldiethanolamine, amine Methyl butanol, hydroxyethylper Ethane sulfonic acid, N- Alkyl propanesulfonic acid, bis(hydroxyethyl)amino ginseng (hydroxymethyl)methane, propanolamine, isopropanolamine, dipropanolamine, diisopropanolamine, and combinations thereof. The alkali hydroxide is selected from the group consisting of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, sodium hydroxide, or potassium hydroxide.

較佳添加一或多種表面活性劑以改良清潔、或加工。表面活性劑可係陰離子表面活性劑、陽離子表面活性劑、或非離子表面活性劑。表面活性劑較佳以約0.1至約10%之量存在。 Preferably one or more surfactants are added to improve cleaning, or processing. The surfactant may be an anionic surfactant, a cationic surfactant, or a nonionic surfactant. The surfactant is preferably present in an amount from about 0.1 to about 10%.

陰離子表面活性劑係選自硫酸鹽表面活性劑、烷基硫酸鹽表面活性劑、磺酸鹽表面活性劑、磷酸鹽表面活性劑、膦酸鹽表面活性劑、及羧酸鹽表面活性劑。 The anionic surfactant is selected from the group consisting of sulfate surfactants, alkyl sulfate surfactants, sulfonate surfactants, phosphate surfactants, phosphonate surfactants, and carboxylate surfactants.

陽離子表面活性劑係選自一級、二級、三級、或四級胺及其鹽。 The cationic surfactant is selected from the group consisting of primary, secondary, tertiary, or quaternary amines and salts thereof.

非離子表面活性劑係選自聚氧乙二醇烷基醚、聚氧丙二醇烷基醚、乙炔二醇、葡萄糖苷烷基醚、聚氧乙二醇辛基苯基醚、聚氧乙二醇烷基酚醚、環氧乙烷及環氧丙烷之嵌段聚合物及氟化表面活性劑。 The nonionic surfactant is selected from the group consisting of polyoxyethylene glycol alkyl ether, polyoxypropylene glycol alkyl ether, acetylene glycol, glucoside alkyl ether, polyoxyethylene glycol octyl phenyl ether, polyoxyethylene glycol. Alkyl phenol ether, block polymers of ethylene oxide and propylene oxide, and fluorinated surfactants.

可將一或多種腐蝕抑制劑添加至組成物來改良與用來施加或移除清潔劑之設備或與經歷清潔過程之電子產品的相容性。較佳的腐蝕抑制劑係選自膦酸鹽、矽酸鹽、鉬酸鹽、鎢酸鹽、碳酸鹽、氫氧化物、羧酸、苯并三唑、甲苯三唑、及其混合物。腐蝕抑制劑係以約0.001至約10%之量存在。 One or more corrosion inhibitors can be added to the composition to improve compatibility with the equipment used to apply or remove the cleaning agent or with the electronic product undergoing the cleaning process. Preferred corrosion inhibitors are selected from the group consisting of phosphonates, citrates, molybdates, tungstates, carbonates, hydroxides, carboxylic acids, benzotriazoles, tolutriazoles, and mixtures thereof. The corrosion inhibitor is present in an amount from about 0.001 to about 10%.

可添加一或多種緩衝劑來提供pH控制以將pH維持在介於約7.1與約14之間。較佳的緩衝劑係選自單、二及三-羧酸、 胺、無機酸、及其混合物。較佳的緩衝劑係單羧酸、二羧酸、磷酸、膦酸、硫酸、硼酸、及其鹽中之一或多者。 One or more buffers may be added to provide pH control to maintain the pH between about 7.1 and about 14. Preferred buffers are selected from the group consisting of mono-, di- and tri-carboxylic acids, Amines, inorganic acids, and mixtures thereof. Preferred buffering agents are one or more of a monocarboxylic acid, a dicarboxylic acid, a phosphoric acid, a phosphonic acid, sulfuric acid, boric acid, and salts thereof.

可將至少一種鉗合或螯隔劑添加至組成物。較佳的鉗合或螯隔劑係乙二胺四乙酸(EDTA)或其鹽及乙二胺-N,N’-二琥珀酸或其鹽、膦酸或其鹽及其混合物。 At least one clamping or chelating agent can be added to the composition. A preferred nip or chelating agent is ethylenediaminetetraacetic acid (EDTA) or a salt thereof and ethylenediamine-N,N'-disuccinic acid or a salt thereof, a phosphonic acid or a salt thereof, and a mixture thereof.

視需要,可包括技藝中熟知類型的起泡改質劑。 Foaming modifiers of the type well known in the art may be included, as desired.

在本發明之另一態樣中,提供一種方法,其包括以熟悉清潔技藝人士已知之方式使如前所述之產品與本發明之組成物接觸一段足以移除助焊劑或其他汙染物的時間。洗滌之後為自部件移除組成物的沖洗階段,再隨後為乾燥階段。洗滌及沖洗可藉由噴霧、在浸泡下噴霧、攪動、超音波、浸漬、滾轉、擦拭或浸泡來完成。 In another aspect of the invention, a method is provided comprising contacting a product as hereinbefore described with a composition of the invention in a manner known to those skilled in the art of cleaning, for a period of time sufficient to remove flux or other contaminants. . After washing, the rinse phase of the composition is removed from the component, followed by the drying phase. Washing and rinsing can be accomplished by spraying, spraying, agitating, sonicating, dipping, rolling, wiping or soaking.

本發明之組成物及方法的較佳具體例詳細說明於以下實施例中,不應將該等實施例解釋為限制本發明之範疇。 The preferred embodiments of the present invention are described in detail in the following examples, which should not be construed as limiting the scope of the invention.

[比較實施例1] [Comparative Example 1]

調配具有100%正丁基吡咯啶酮之清潔劑來測試於工業中遭遇到之各種商業助熔劑的移除。在利用攪拌棒低速攪動的燒杯中將溶液加熱至60℃。將具有助熔劑的測試電路板於溶液中浸泡5、10及15分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果: A cleaning agent with 100% n-butyl pyrrolidone was formulated to test the removal of various commercial fluxes encountered in the industry. The solution was heated to 60 ° C in a beaker that was agitated at low speed with a stir bar. The test board with the flux was soaked in the solution for 5, 10 and 15 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning:

[實施例1] [Example 1]

調配具有95%正丁基吡咯啶酮及5%二甘醇胺之溶液(pH=11.6,pKa=9.45)並在利用攪拌棒低速攪動的燒杯中加熱至60℃。將具有助熔劑的測試電路板於溶液中浸泡5、10及15分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: A solution of 95% n-butylpyrrolidone and 5% diglycolamine (pH = 11.6, pKa = 9.45) was formulated and heated to 60 ° C in a beaker stirred at low speed with a stir bar. The test board with the flux was soaked in the solution for 5, 10 and 15 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

在所有21個於相同條件下的試驗中,添加鹼性物料二甘醇胺改良純態正丁基吡咯啶酮的清潔。 In all of the 21 tests under the same conditions, the alkaline material diglycolamine was added to improve the cleaning of the pure n-butylpyrrolidone.

[實施例2] [Embodiment 2]

調配具有85%正丁基吡咯啶酮及5%二甘醇胺(pH=11.6,pKa=9.45)及10%二丙二醇正丁醚之溶液。在利用攪拌棒低速攪動的燒杯中將混合物加熱至60℃。將具有助熔劑的測試電路板於溶液中浸泡5、10及15分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: A solution having 85% n-butylpyrrolidone and 5% diglycolamine (pH = 11.6, pKa = 9.45) and 10% dipropylene glycol n-butyl ether was formulated. The mixture was heated to 60 ° C in a beaker that was agitated at a low speed with a stir bar. The test board with the flux was soaked in the solution for 5, 10 and 15 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

在21個於相同條件下之試驗的19個中,添加鹼性物料二甘醇胺及添加二醇醚二丙二醇正丁醚改良純態正丁基吡咯啶酮的清潔。 The cleaning of the pure n-butylpyrrolidone was improved by adding the basic material diglycolamine and the addition of the glycol ether dipropylene glycol n-butyl ether to 19 of the 21 tests under the same conditions.

[比較實施例2] [Comparative Example 2]

調配如同比較實施例1中具有100%正丁基吡咯啶酮的清潔劑。此試驗係要評估使用水性過程(其中用水稀釋濃縮溶液並將其噴於部件上)移除相同商業助熔劑的能力。將試驗溶液添加至水以形成15%溶液。該15%溶液具有4.6之pH。將該15%清潔溶液置於商業批式清潔機器(Aqueous Technologies SMT800-LD)中並藉由於空氣中噴於板上來進行清潔。將該清潔溶液於機器儲存槽中加熱至60℃並在相同溫度下噴於測試板上。將具有助熔劑的測試板於機器中清潔15及30分鐘,然後利用去離子水沖洗5分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果: A detergent having 100% n-butylpyrrolidone in Comparative Example 1 was formulated as in Comparative Example 1. This test is to evaluate the ability to remove the same commercial flux using an aqueous process in which the concentrated solution is diluted with water and sprayed onto the part. The test solution was added to water to form a 15% solution. The 15% solution has a pH of 4.6. The 15% cleaning solution was placed in a commercial batch cleaning machine (Aqueous Technologies SMT800-LD) and cleaned by spraying air onto the plate. The cleaning solution was heated to 60 ° C in a machine storage tank and sprayed on the test panel at the same temperature. The test plate with the flux was cleaned in the machine for 15 and 30 minutes, then rinsed with deionized water for 5 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning:

[實施例3] [Example 3]

調配具有95%正丁基吡咯啶酮及5%二甘醇胺之來自實施例1的清潔劑。然後將溶液添加至水以形成15%溶液。該15%溶液具有10.7之pH及9.45之pKa。將該15%清潔溶液置於商業批式清潔機器(Aqueous Technologies SMT800-LD)中並藉由於空氣中噴於板上來進行清潔。將該清潔溶液於機器儲存槽中加熱至60℃並在相同溫度下噴於測試板上。將具有助熔劑的測試板於機器中清潔15及30分鐘,然後利用去離子水沖洗5分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: The cleaning agent from Example 1 having 95% n-butylpyrrolidone and 5% diglycolamine was formulated. The solution was then added to water to form a 15% solution. The 15% solution has a pH of 10.7 and a pKa of 9.45. The 15% cleaning solution was placed in a commercial batch cleaning machine (Aqueous Technologies SMT800-LD) and cleaned by spraying air onto the plate. The cleaning solution was heated to 60 ° C in a machine storage tank and sprayed on the test panel at the same temperature. The test plate with the flux was cleaned in the machine for 15 and 30 minutes, then rinsed with deionized water for 5 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

在14個於相同條件下之試驗的13個中,添加鹼性物料二甘醇胺等於或改良純態正丁基吡咯啶酮的清潔。 The addition of the basic material diglycolamine equals or improves the cleaning of the pure n-butylpyrrolidone in 14 of the 14 tests under the same conditions.

[實施例4] [Example 4]

調配具有85%正丁基吡咯啶酮及5%二甘醇胺及10%二丙二醇正丁基醚之來自實施例2的清潔劑。然後將溶液添加至水以形成15%溶液。該15%溶液具有10.7之pH及9.45之pKa。將該15%清潔溶液置於商業批式清潔機器(Aqueous Technologies SMT800-LD)中並藉由於空氣中噴於板上來進行清潔。將該清潔溶液於機器儲存槽中加熱至60℃並在相同溫度下噴於測試板上。將具有助熔劑的測試板於機器中清潔15及30分鐘,然後利用去離子水沖洗5分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: The cleaning agent from Example 2 was formulated with 85% n-butylpyrrolidone and 5% diglycolamine and 10% dipropylene glycol n-butyl ether. The solution was then added to water to form a 15% solution. The 15% solution has a pH of 10.7 and a pKa of 9.45. The 15% cleaning solution was placed in a commercial batch cleaning machine (Aqueous Technologies SMT800-LD) and cleaned by spraying air onto the plate. The cleaning solution was heated to 60 ° C in a machine storage tank and sprayed on the test panel at the same temperature. The test plate with the flux was cleaned in the machine for 15 and 30 minutes, then rinsed with deionized water for 5 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

在所有14個於相同條件下的試驗中,添加鹼性物料二甘醇胺及添加二醇醚二丙二醇正丁基醚改良純態正丁基吡咯啶酮的清潔。 In all of the 14 tests under the same conditions, the alkaline material diglycolamine was added and the glycol ether dipropylene glycol n-butyl ether was added to improve the cleaning of the pure n-butyl pyrrolidone.

[比較實施例3] [Comparative Example 3]

在評估自矽晶圓清潔各種聚合性抗蝕劑材料的試驗中,調配具有100%正丁基吡咯啶酮的清潔劑。針對實施例選擇兩種商業及一種經分類為「乾膜」光阻劑的專利聚合物。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性光阻劑的測試晶圓於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並 利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果: In the test for evaluating various polymerizable resist materials for self-cleaning wafers, a detergent having 100% n-butylpyrrolidone was formulated. Two commercial and one patented polymers classified as "dry film" photoresists were selected for the examples. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test wafer with the polymeric photoresist was soaked in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning:

[實施例5] [Example 5]

在評估自矽晶圓清潔各種聚合性抗蝕劑材料的試驗中,調配具有75%正丁基吡咯啶酮、18.75%水及6.25%氫氧化四甲銨的清潔劑。溶液之pH為13.1及pKa為9.8。針對實施例選擇相同的兩種商業及一種經分類為「乾膜」光阻劑的專利聚合物。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性光阻劑的測試晶圓於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: In a test for evaluating various polymerizable resist materials for self-cleaning wafers, a detergent having 75% n-butylpyrrolidone, 18.75% water, and 6.25% tetramethylammonium hydroxide was formulated. The pH of the solution was 13.1 and the pKa was 9.8. The same two commercial and one patented polymers classified as "dry film" photoresists were selected for the examples. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test wafer with the polymeric photoresist was soaked in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

添加鹼性材料相較於純態溶劑改良晶圓的清潔。 The addition of an alkaline material improves the cleaning of the wafer compared to a pure solvent.

[實施例6] [Embodiment 6]

在評估自矽晶圓清潔各種聚合性抗蝕劑材料的試驗中,調配具有50%正丁基吡咯啶酮、37.5%水及12.5%氫氧化四甲銨的清潔劑。溶液之pH為13.6及pKa為9.8。針對實施例選擇相同的兩種商業及一種經分類為「乾膜」光阻劑的專利聚合物。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性光阻劑的測試晶圓於溶液中浸泡90分鐘,然後利用去離子水沖洗2分 鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: In the test for evaluating various polymerizable resist materials for self-cleaning wafers, a detergent having 50% n-butylpyrrolidone, 37.5% water, and 12.5% tetramethylammonium hydroxide was formulated. The pH of the solution was 13.6 and the pKa was 9.8. The same two commercial and one patented polymers classified as "dry film" photoresists were selected for the examples. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test wafer with the polymeric photoresist was soaked in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

添加增加含量的鹼度及降低含量的丁基吡咯啶酮實際上地增加清潔。 The addition of increased levels of alkalinity and reduced levels of butyl pyrrolidone actually increases cleaning.

[實施例7] [Embodiment 7]

在評估自矽晶圓清潔各種聚合性抗蝕劑材料的試驗中,調配具有34%正丁基吡咯啶酮、33%二甲亞碸、24.75%水及8.25%氫氧化四甲銨的清潔劑。溶液之pH為13.6及pKa為9.8。針對實施例選擇相同的兩種商業及一種經分類為「乾膜」光阻劑的專利聚合物。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性光阻劑的測試晶圓於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: In the test for evaluating various polymerizable resist materials for self-cleaning wafers, a detergent having 34% n-butyl pyrrolidone, 33% dimethyl hydrazine, 24.75% water, and 8.25% tetramethylammonium hydroxide was formulated. . The pH of the solution was 13.6 and the pKa was 9.8. The same two commercial and one patented polymers classified as "dry film" photoresists were selected for the examples. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test wafer with the polymeric photoresist was soaked in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the board. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

添加增加含量的鹼度結合極性溶劑導致完全清潔晶圓,證明經調配產物相對單一溶劑的價值。 The addition of an increased level of alkalinity in combination with a polar solvent results in a complete cleaning of the wafer, demonstrating the value of the formulated product over a single solvent.

[實施例8] [Embodiment 8]

調配具有100%正丁基吡咯啶酮之清潔劑以評估經固化一般酚醛清漆(novolak)型聚合性黏著劑的清潔。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性黏著劑的測試基 板於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查金屬基板。以下係以清潔百分比計之該試驗的結果: A cleaner having 100% n-butylpyrrolidone was formulated to evaluate the cleaning of a cured general novolak type polymeric adhesive. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test substrate with the polymeric adhesive was immersed in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the metal substrate. The results of this test are based on the percentage of cleaning:

[實施例9] [Embodiment 9]

調配具有90%正丁基吡咯啶酮、10%二甘醇胺(pH=11.6,pKa=9.45)之清潔劑以評估經固化一般酚醛清漆型聚合性黏著劑的清潔。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性黏著劑的測試基板於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查金屬基板。以下係以清潔百分比計之該試驗的結果: A cleaning agent having 90% n-butylpyrrolidone and 10% diglycolamine (pH = 11.6, pKa = 9.45) was formulated to evaluate the cleaning of the cured general novolac type polymeric adhesive. The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test substrate with the polymeric adhesive was immersed in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the metal substrate. The results of this test are based on the percentage of cleaning:

[實施例10] [Embodiment 10]

調配具有70%正丁基吡咯啶酮、10%二甘醇胺(pH=11.6,pKa=9.45)、20%碳酸丙二酯之清潔劑以評估經固化一般酚醛清漆型聚合性黏著劑的清潔。將溶液於利用攪拌棒低速攪動的燒杯中加熱至75℃。將具有聚合性黏著劑的測試基板於溶液中浸泡90分鐘,然後利用去離子水沖洗2分鐘,並利用熱空氣乾燥。然後檢查金屬基板。以下係以清潔百分比計之該試驗的結果,括號中為比較分數: A cleaning agent with 70% n-butyl pyrrolidone, 10% diglycolamine (pH=11.6, pKa=9.45), 20% propylene carbonate was formulated to evaluate the cleaning of the cured general novolac type polymeric adhesive. . The solution was heated to 75 ° C in a beaker stirred at low speed with a stir bar. The test substrate with the polymeric adhesive was immersed in the solution for 90 minutes, then rinsed with deionized water for 2 minutes and dried with hot air. Then check the metal substrate. The results of this test are based on the percentage of cleaning, which is the comparison score in parentheses:

添加增加含量的鹼度結合溶劑導致完全清潔金屬基板,證明經調配產物相對單一溶劑的價值。 The addition of an increased level of alkalinity to the solvent results in complete cleaning of the metal substrate, demonstrating the value of the formulated product over a single solvent.

Claims (41)

一種有效用於在製造期間自電子部件或總成移除汙染物之組成物,其包含至少一種丁基吡咯啶酮;及鹼,且具有至少約7.1之pH及小於12之pKa。 A composition effective for removing contaminants from an electronic component or assembly during manufacture, comprising at least one butyl pyrrolidone; and a base, and having a pH of at least about 7.1 and a pKa of less than 12. 如請求項1之組成物,其進一步包含水。 The composition of claim 1, which further comprises water. 如請求項2之組成物,其中,該水係以約0.1至約99.9%之量存在。 The composition of claim 2, wherein the water system is present in an amount of from about 0.1 to about 99.9%. 如請求項1之組成物,其進一步包含第二溶劑。 The composition of claim 1, which further comprises a second solvent. 如請求項1之組成物,其中,該第二溶劑係以約0.1%至約99.9%之量存在。 The composition of claim 1, wherein the second solvent is present in an amount of from about 0.1% to about 99.9%. 如請求項4之組成物,其中,該第二溶劑係式R1-O-(CxH2xO)n-H之二醇醚,其中:R1係具有1至8個碳原子之烷基,n係介於1與10間之整數,及x係2或3。 The composition of claim 4, wherein the second solvent is a glycol ether of the formula R 1 -O-(C x H 2x O) n -H, wherein: R 1 is an alkane having 1 to 8 carbon atoms Base, n is an integer between 1 and 10, and x is 2 or 3. 如請求項6之組成物,其中,該第二溶劑係選自丙二醇甲基醚、二丙二醇甲基醚、三丙二醇甲基醚、丙二醇甲基醚乙酸酯、二丙二醇甲基醚乙酸酯、丙二醇正丙醚、二丙二醇丙基醚、丙二醇丁基醚、二丙二醇丁基醚、三丙二醇丁基醚、聚丙二醇丁基醚、丙二醇苯基醚、丙二醇二乙酸酯、聚丙二醇丁基醚、二乙二醇乙基醚、二乙二醇甲基醚、二乙二醇丁基醚、二乙二醇己基醚、二乙二醇丁基醚乙酸酯、乙二醇丙基醚、乙二醇正丁基醚、乙二醇己基醚、乙二醇正丁基醚乙酸酯、三乙二醇甲基醚、三乙二醇乙基醚、三乙二醇丁基醚、聚乙二醇丁基醚、乙二醇苯基醚、聚乙二醇乙基醚、及 其混合物。 The composition of claim 6, wherein the second solvent is selected from the group consisting of propylene glycol methyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether, propylene glycol methyl ether acetate, and dipropylene glycol methyl ether acetate. , propylene glycol n-propyl ether, dipropylene glycol propyl ether, propylene glycol butyl ether, dipropylene glycol butyl ether, tripropylene glycol butyl ether, polypropylene glycol butyl ether, propylene glycol phenyl ether, propylene glycol diacetate, polypropylene glycol butyl Ether, diethylene glycol ethyl ether, diethylene glycol methyl ether, diethylene glycol butyl ether, diethylene glycol hexyl ether, diethylene glycol butyl ether acetate, ethylene glycol propyl ether , ethylene glycol n-butyl ether, ethylene glycol hexyl ether, ethylene glycol n-butyl ether acetate, triethylene glycol methyl ether, triethylene glycol ethyl ether, triethylene glycol butyl ether, polyethyl b Glycol butyl ether, ethylene glycol phenyl ether, polyethylene glycol ethyl ether, and Its mixture. 如請求項4之組成物,其中,該第二溶劑係式CxHyOzSn之醇或多元醇,其中:x係介於2與8間之整數,y係介於5與18間之整數,及z係介於1與5間之整數,n係0或1。 The composition of claim 4, wherein the second solvent is an alcohol or a polyol of the formula C x H y O z S n , wherein: x is an integer between 2 and 8, and the y is between 5 and 18. The integer between, and z is an integer between 1 and 5, and n is 0 or 1. 如請求項8之組成物,其中,該第二溶劑係選自乙醇、正丙醇、異丙醇、正丁醇、異丁醇、第三丁醇、正戊醇、異戊醇、四氫呋喃甲醇、己醇、環己醇、乙基己醇、乙二醇、丙二醇、甘油、丁二醇、丁三醇、戊二醇、戊三醇及二甲亞碸、及其混合物。 The composition of claim 8, wherein the second solvent is selected from the group consisting of ethanol, n-propanol, isopropanol, n-butanol, isobutanol, tert-butanol, n-pentanol, isoamyl alcohol, tetrahydrofuran methanol , hexanol, cyclohexanol, ethylhexanol, ethylene glycol, propylene glycol, glycerin, butylene glycol, butyl triol, pentanediol, pentanetriol and dimethyl hydrazine, and mixtures thereof. 如請求項1之組成物,其中,該鹼係其量足以使pH介於約7.1與約14之間及pKa小於12的胺或氫氧化物。 The composition of claim 1 wherein the base is in an amount sufficient to provide an amine or hydroxide having a pH between about 7.1 and about 14 and a pKa of less than 12. 如請求項10之組成物,其中,該鹼係以介於約0.1與約50%之間的量存在。 The composition of claim 10, wherein the base is present in an amount between about 0.1 and about 50%. 如請求項10之組成物,其中,該鹼係以使pH介於約8至約13之間之量存在的胺。 The composition of claim 10, wherein the base is an amine present in an amount to provide a pH between about 8 and about 13. 如請求項10之組成物,其中,該胺係烷醇胺。 The composition of claim 10, wherein the amine is an alkanolamine. 如請求項13之組成物,其中,該烷醇胺係選自單乙醇胺、二乙醇胺、三乙醇胺、胺甲基丙醇、甲基乙醇胺、甲基二乙醇胺、二甲基乙醇胺、二甘醇胺、甲基乙醇胺、單甲基乙基乙醇胺、二甲胺基丙基胺、胺丙基二乙醇胺、異丙基羥基胺、二甲胺基甲基丙醇、胺乙基丙二醇、胺乙基丙二醇、二甲基胺甲基丙醇參(羥甲基)胺基甲烷、胺基丁醇、二甘醇胺、二甲胺基丙醇、乙基胺基乙醇、丁基 胺基乙醇、二丁基胺基乙醇、丁基二乙醇胺、胺甲基丁醇、羥乙基哌乙磺酸、N-啉基丙磺酸、雙(羥乙基)胺基參(羥甲基)甲烷、丙醇胺、異丙醇胺、二丙醇胺、二異丙醇胺及其組合;該鹼氫氧化物係選自氫氧化四甲銨、氫氧化四丁銨、氫氧化四丙銨、氫氧化鈉、或氫氧化鉀。 The composition of claim 13, wherein the alkanolamine is selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, amine methylpropanol, methylethanolamine, methyldiethanolamine, dimethylethanolamine, diglycolamine. , methylethanolamine, monomethylethylethanolamine, dimethylaminopropylamine, amine propyldiethanolamine, isopropylhydroxylamine, dimethylaminomethylpropanol, amine ethyl propylene glycol, amine ethyl propylene glycol , dimethylamine methyl propanol ginseng (hydroxymethyl) aminomethane, aminobutanol, diglycolamine, dimethylaminopropanol, ethylaminoethanol, butylaminoethanol, dibutyl Aminoethanol, butyl diethanolamine, amine methylbutanol, hydroxyethylper Ethane sulfonic acid, N- Alkanopropanesulfonic acid, bis(hydroxyethyl)amino ginseng (hydroxymethyl)methane, propanolamine, isopropanolamine, dipropanolamine, diisopropanolamine, and combinations thereof; the alkali hydroxide It is selected from the group consisting of tetramethylammonium hydroxide, tetrabutylammonium hydroxide, tetrapropylammonium hydroxide, sodium hydroxide, or potassium hydroxide. 如請求項10之組成物,其中,該鹼係氫氧化四丙銨或氫氧化鉀。 The composition of claim 10, wherein the base is tetrapropylammonium hydroxide or potassium hydroxide. 如請求項1之組成物,其中,該丁基吡咯啶酮之酯係以約0.1至約100%之濃度存在。 The composition of claim 1, wherein the ester of butylpyrrolidone is present at a concentration of from about 0.1 to about 100%. 如請求項16之組成物,其中,該丁基吡咯啶酮係正丁基吡咯啶酮。 The composition of claim 16, wherein the butylpyrrolidone is n-butyl pyrrolidone. 如請求項1之組成物,其進一步包含表面活性劑。 The composition of claim 1, which further comprises a surfactant. 如請求項18之組成物,其中,該表面活性劑係以約0.1至約10%之量存在。 The composition of claim 18, wherein the surfactant is present in an amount of from about 0.1 to about 10%. 如請求項19之組成物,其中,該表面活性劑係選自陰離子表面活性劑、陽離子表面活性劑、非離子表面活性劑、及其混合物。 The composition of claim 19, wherein the surfactant is selected from the group consisting of anionic surfactants, cationic surfactants, nonionic surfactants, and mixtures thereof. 如請求項20之組成物,其中:a.該陰離子表面活性劑係選自硫酸鹽表面活性劑、烷基硫酸鹽表面活性劑、磺酸鹽表面活性劑、磷酸鹽表面活性劑、膦酸鹽表面活性劑、及羧酸鹽表面活性劑;b.該陽離子表面活性劑係選自一級、二級、三級、或四級胺及其鹽;及c.該非離子表面活性劑係選自聚氧乙二醇烷基醚、聚氧丙二醇烷基醚、乙炔二醇、葡萄糖苷烷基醚、聚氧乙二醇辛基苯基醚、聚氧 乙二醇烷基酚醚、及環氧乙烷及環氧丙烷之嵌段聚合物及氟化表面活性劑。 The composition of claim 20, wherein: a. the anionic surfactant is selected from the group consisting of a sulfate surfactant, an alkyl sulfate surfactant, a sulfonate surfactant, a phosphate surfactant, and a phosphonate. a surfactant, and a carboxylate surfactant; b. the cationic surfactant is selected from the group consisting of a primary, secondary, tertiary, or quaternary amine and a salt thereof; and c. the nonionic surfactant is selected from the group consisting of Oxyethylene glycol alkyl ether, polyoxypropylene glycol alkyl ether, acetylene glycol, glucoside alkyl ether, polyoxyethylene glycol octyl phenyl ether, polyoxygen A glycol alkyl phenol ether, a block polymer of ethylene oxide and propylene oxide, and a fluorinated surfactant. 如請求項1之組成物,其進一步包含腐蝕抑制劑。 The composition of claim 1, which further comprises a corrosion inhibitor. 如請求項22之組成物,其中,該腐蝕抑制劑係選自膦酸鹽、矽酸鹽、鉬酸鹽、鎢酸鹽、碳酸鹽、氫氧化物、羧酸、唑類、及其混合物。 The composition of claim 22, wherein the corrosion inhibitor is selected from the group consisting of phosphonates, citrates, molybdates, tungstates, carbonates, hydroxides, carboxylic acids, azoles, and mixtures thereof. 如請求項23之組成物,其中,該腐蝕抑制劑係選自矽酸鈉、偏矽酸鈉、矽酸鉀、矽酸四甲銨、苯并三唑及甲苯三唑。 The composition of claim 23, wherein the corrosion inhibitor is selected from the group consisting of sodium citrate, sodium metasilicate, potassium citrate, tetramethylammonium citrate, benzotriazole, and tolutriazole. 如請求項22之組成物,其中,該腐蝕抑制劑係以約0.001至約10%之量存在。 The composition of claim 22, wherein the corrosion inhibitor is present in an amount of from about 0.001 to about 10%. 如請求項1之組成物,其進一步包含緩衝劑。 The composition of claim 1, which further comprises a buffer. 如請求項26之組成物,其中,該緩衝劑係選自羧酸、及無機酸、及其混合物。 The composition of claim 26, wherein the buffer is selected from the group consisting of carboxylic acids, inorganic acids, and mixtures thereof. 如請求項27之組成物,其中,該緩衝劑係5至18個碳之單羧酸、5至18個碳之二羧酸、磷酸、膦酸、硫酸、硼酸、及其鹽中之一或多者。 The composition of claim 27, wherein the buffer is one of 5 to 18 carbon monocarboxylic acids, 5 to 18 carbon dicarboxylic acids, phosphoric acid, phosphonic acid, sulfuric acid, boric acid, and salts thereof More. 如請求項26之組成物,其中,該緩衝劑係以可有效使pH保持於7.1至14及pKa小於12之濃度存在。 The composition of claim 26, wherein the buffer is present in a concentration effective to maintain the pH between 7.1 and 14 and a pKa of less than 12. 如請求項1之組成物,其進一步包含至少一種鉗合劑。 The composition of claim 1 further comprising at least one chelating agent. 如請求項30之組成物,其中,該鉗合劑係選自由以下各者組成之群:乙二胺四乙酸或其鹽及乙二胺-N,N’-二琥珀酸或其鹽、膦酸或其鹽及其混合物。 The composition of claim 30, wherein the chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid or a salt thereof and ethylenediamine-N,N'-disuccinic acid or a salt thereof, phosphonic acid Or a salt thereof and a mixture thereof. 如請求項1之組成物,其進一步包含起泡改質劑。 The composition of claim 1, which further comprises a foaming modifier. 如請求項1之組成物,其中,該汙染物係助焊劑。 The composition of claim 1, wherein the contaminant is a flux. 如請求項1之組成物,其中,該汙染物係聚合性光阻劑。 The composition of claim 1, wherein the contaminant is a polymeric photoresist. 如請求項1之組成物,其中,該汙染物係黏著劑。 The composition of claim 1, wherein the contaminant is an adhesive. 如請求項1之組成物,其中,該汙染物本質上係離子性的且能夠在電子組件上的兩個點之間引起雜散的不期望電流。 The composition of claim 1 wherein the contaminant is ionic in nature and is capable of causing stray undesired currents between two points on the electronic component. 一種自基板移除汙染物之方法,其包括在足以移除該助焊劑之溫度及接觸時間下使該基板與請求項1之組成物接觸。 A method of removing contaminants from a substrate comprising contacting the substrate with a composition of claim 1 at a temperature and contact time sufficient to remove the flux. 如請求項37之方法,其進一步包含清潔步驟,且其中該清潔步驟係在介於20℃與沸點之間的溫度及介於1至1000秒之間的時間及在-0.3至2大氣壓之清潔壓力下進行。 The method of claim 37, further comprising a cleaning step, and wherein the cleaning step is at a temperature between 20 ° C and the boiling point and a time between 1 and 1000 seconds and a cleaning at -0.3 to 2 atmospheres Under pressure. 如請求項38之方法,其中,該清潔步驟包含洗滌階段及隨後的沖洗階段及乾燥階段。 The method of claim 38, wherein the cleaning step comprises a washing stage and a subsequent washing stage and drying stage. 如請求項39之方法,其中,該沖洗階段係利用包含該清潔劑、水、去離子水或含氟化溶劑的沖洗流體進行。 The method of claim 39, wherein the rinsing stage is performed using a rinsing fluid comprising the cleaning agent, water, deionized water, or a fluorinated solvent. 一種於製造期間自電子部件或總成清潔汙染物之方法,其包括使該等部件或總成與請求項2之組成物接觸足以移除該等汙染物的時間。 A method of cleaning contaminants from an electronic component or assembly during manufacture, comprising contacting the components or assemblies with the composition of claim 2 for a time sufficient to remove the contaminants.
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