TW201926536A - Bottom and middle edge rings - Google Patents

Abstract

A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respective lift pins for raising and lowering the edge ring.

Description

Bottom and middle edge ring

The present disclosure is directed to a movable edge ring in a substrate processing system. Cross-references to related applications

The present disclosure is related to the application of the International Application No. PCT/US2017/043527 filed on Jul. 24, 2017. The entire disclosure of the above-referenced application is incorporated herein by reference.

The background description provided herein is intended to be illustrative of the present invention. The results of the work of the inventors currently listed, the scope of the prior art sections, and the manner in which they may not be otherwise qualified as prior art descriptions at the time of application, are not expressly or implicitly admitted to the present disclosure. Prior art of content.

A substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on a substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and/or other etching, deposition, or cleaning processes. The substrate can be disposed on a substrate support in a processing chamber of the substrate processing system, such as a susceptor, an electrostatic chuck (ESC), or the like. During etching, a gas mixture containing one or more precursors can be introduced into the processing chamber and plasma can be used to initiate a chemical reaction.

The substrate holder can include a ceramic layer configured to support the wafer. For example, the wafer can be clamped to the ceramic layer during processing. The substrate support can include an edge ring disposed about the exterior of the substrate support (eg, on the outside of the perimeter and/or adjacent the perimeter). The edge ring can be configured to confine the plasma to a volume above the substrate, protecting the substrate support from corrosion caused by plasma or the like.

The bottom ring system is configured to support a movable edge ring. The edge ring system is configured to rise and lower relative to the substrate support. The bottom ring includes a stepped upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guiding channels that pass from the lower surface of the bottom ring through the bottom ring to the upper surface of the bottom ring Settings. Each of the guide channels includes a first region having a smaller diameter than the guide channels, and the guide channels are configured to receive individual lift pins for raising and lowering the edge rings.

In other features, the diameter of the guide channel is between 0.063" and 0.067". Each of the guide channels includes a cavity on a surface below the bottom ring, wherein the holes have a larger diameter than the guide channels. The transition zone between the guide channel and the cavity is chamfered. The transition zone chamfered has a height and width between 0.020" and 0.035" and an angle between ^40o and ^50o . The inner diameter of the step in the upper surface is at least 13.0".

In other features, the bottom ring includes guiding features that extend upward from the upper surface of the bottom ring. The guiding channel passes through the guiding feature. The guiding feature includes a first region of the guiding channel. The upper surface includes an inner annular edge, and wherein the guiding feature and the inner annular edge define a groove. The height of the guiding feature is greater than the height of the inner annular edge. At least one of the first upper corner 隅 and the second upper corner 导引 of the guiding feature is chamfered. The upper surface includes an inner annular edge and an outer annular edge, wherein the guiding feature and the inner annular edge define a first groove, and wherein the guiding feature and the outer annular edge define a second groove.

In other features, the upper surface includes at least two changes in direction. The upper surface contains at least five directional changes. The upper surface contains at least five alternating vertical and horizontal paths. The bottom ring has a first outer diameter and a second outer diameter that is greater than the first outer diameter. The bottom ring includes an annular lip that extends radially outward from the outer diameter of the bottom ring. The lower surface includes a plurality of cavities that are configured to align with the bolt holes in the bottom plate of the substrate holder.

The intermediate ring is disposed on the bottom ring and supports the movable edge ring. The edge ring system is configured to rise and lower relative to the substrate support. The intermediate ring includes a stepped upper surface, an annular inner diameter, an annular outer diameter, a lower surface, a guiding feature defining an annular outer diameter, an inner annular edge defining an annular inner diameter, and a guiding feature and an inner annular edge The groove defined between.

In other features, at least one of the first upper corner 隅 and the second upper corner 导引 of the guiding feature are chamfered. The middle ring has a "U" shape. The upper surface contains at least four changes in direction. The upper surface contains at least five alternating vertical and horizontal paths.

Further areas of applicability of the present disclosure will become apparent from the embodiments, the scope of the invention, and the drawings. The detailed description and specific examples are intended for purposes of illustration

The substrate support in the substrate processing system can include an edge ring. The upper surface of the edge ring may extend over the upper surface of the substrate support such that the upper surface of the substrate support (and, in some examples, the upper surface of the substrate disposed on the substrate support) is recessed relative to the edge ring. This recess can be referred to as a pocket. The distance between the upper surface of the edge ring and the upper surface of the substrate may be referred to as "pocket depth". Typically, the depth of the pocket is fixed according to the height of the edge ring relative to the upper surface of the substrate.

Some implementations of the etching process may vary due to the characteristics of the substrate processing system, substrate, gas mixture, and the like. For example, the flow pattern and thus the etch rate and etch uniformity may be based on pocket depth of the edge ring, edge ring geometry (ie, shape), and including, but not limited to, gas flow rate, gas type, injection angle, injection location, and the like. Other variables vary. Thus, varying the configuration of the edge ring (eg, including edge ring height and/or geometry) can alter the gas velocity profile across the substrate surface.

Some substrate processing systems may implement a movable (eg, adjustable) edge ring and/or a replaceable edge ring. In an example, the height of the movable edge ring can be adjusted during processing to control etch uniformity. The edge ring can be coupled to an actuator configured to raise and lower the edge ring in response to a controller, a user interface, or the like. In an example, the controller of the substrate processing system controls the height of the edge ring during processing, between processing steps, etc., depending on the particular recipe being performed and the associated gas injection parameters. In addition, the edge ring and other components may contain consumables that wear/corrode over time. Therefore, the height of the edge ring can be adjusted to compensate for corrosion. In other examples, the edge ring can be removable and replaceable (to replace, for example, a corroded or damaged edge ring, to replace an edge ring with an edge ring having a different geometry, etc.). An example of a substrate processing system that implements a movable and replaceable edge ring can be found in U.S. Patent Application Serial No. 14/705,430, filed on May 5, 2015, the entire disclosure of .

A substrate processing system and method in accordance with the principles of the present disclosure includes an intermediate edge ring and a bottom edge ring configured to support a movable top edge ring.

Referring now to Figure 1, an exemplary substrate processing system 100 is shown. For example only, the substrate processing system 100 can be used to perform etching using RF plasma and/or other suitable substrate processing. The substrate processing system 100 includes a processing chamber 102 that encloses other components of the substrate processing system 100 and houses RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). The substrate 108 is disposed on the substrate support 106 during operation. Although the particular substrate processing system 100 and chamber 102 are shown as examples, the principles of the present disclosure are applicable to other types of substrate processing systems and chambers, such as generating plasma in situ, implementing remote plasma generation and delivery. A substrate processing system (for example, using a plasma tube or a microwave tube).

For example only, the upper electrode 104 may include a gas distribution device, such as a showerhead 109, that introduces and distributes a process gas (eg, an etch process gas). The showerhead 109 can include a stem portion that includes an end that is coupled to a top surface of the processing chamber. The base is generally cylindrical and extends radially outward from opposite ends of the stem at a location spaced from the top surface of the processing chamber. The surface or panel of the base of the showerhead that faces the substrate contains a plurality of holes through which the process gas or flushing gas flows. Alternatively, the upper electrode 104 can comprise a conductive plate and the process gas can be introduced in another manner.

The substrate holder 106 includes a conductive substrate 110 as a lower electrode. The bottom plate 110 supports the ceramic layer 112. In some examples, ceramic layer 112 can include a heating layer, such as a ceramic multi-zone heating plate. A thermal resistance layer 114 (eg, a bonding layer) may be disposed between the ceramic layer 112 and the bottom plate 110. The bottom plate 110 can include one or more coolant passages 116 for flowing coolant through the bottom plate 110.

The RF generation system 120 generates an RF voltage and outputs the RF voltage to one of the upper electrode 104 and the lower electrode (eg, the substrate 110 of the substrate holder 106). The other of the upper electrode 104 and the bottom plate 110 may be DC grounded, AC grounded, or floated. For example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage that is fed to the upper electrode 104 or the backplane 110 by a matching and distribution network 124. In other examples, the plasma can be generated inductively or remotely. As shown for purposes of example, although the RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure may also be implemented in other suitable systems, such as, by way of example only, transformer coupling. Slurry (TCP) systems, CCP cathode systems, remote microwave plasma generation and delivery systems, and the like.

Gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source supplies one or more gases (eg, etching gas, carrier gas, flushing gas, etc.) and mixtures thereof. The gas source can also supply flushing gas. The gas source 132 is composed of valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass Flow controller 136) is coupled to manifold 140. The output of manifold 140 is fed to processing chamber 102. For example only, the output of the manifold 140 is fed to the showerhead 109.

The temperature controller 142 can be coupled to a plurality of heating elements 144, such as thermal control elements (TCEs) disposed in the ceramic layer 112. For example, the heating element 144 can include, but is not limited to, a macroscopic heating element corresponding to each zone in the multi-zone heating plate, and/or a microscopic heating element array disposed across multiple zones of the multi-zone heating plate. Temperature controller 142 can be used to control complex heating elements 144 to control the temperature of substrate support 106 and substrate 108.

Temperature controller 142 can communicate with coolant assembly 146 to control coolant flowing through passage 116. For example, the coolant assembly 146 can include a coolant pump and a sump. Temperature controller 142 operates coolant assembly 146 to selectively cause coolant to flow through passage 116 to cool substrate support 106.

Valve 150 and pump 152 can be used to evacuate reactants from processing chamber 102. System controller 160 can be used to control the components of substrate processing system 100. The robot 170 can be used to deliver the substrate onto the substrate support 106 and to remove the substrate from the substrate support 106. For example, the robot 170 can transfer the substrate between the substrate holder 106 and the load lock portion 172. Although shown as a separate controller, temperature controller 142 can be implemented within system controller 160. In some examples, a protective seal 176 can be disposed about the circumference of the bonding layer 114 between the ceramic layer 112 and the bottom plate 110.

The substrate support 106 includes an edge ring 180. The edge ring 180 can correspond to a top ring that can be supported by the bottom ring 184. As described in greater detail below, in some examples, the edge ring 180 can be further supported by one or more of an intermediate ring (not shown in FIG. 1), a stepped portion of the ceramic layer 112, and the like. The edge ring 180 is movable relative to the substrate 108 (e.g., can move up and down in a vertical direction). For example, the edge ring 180 can be controlled by an actuator responsive to the controller 160. In some examples, the edge ring 180 can be adjusted during substrate processing (ie, the edge ring 180 can be an adjustable edge ring). In other examples, the edge ring 180 can be removable (eg, removed using the robot 170 via the plenum when the processing chamber 102 is under vacuum). In still other examples, the edge ring 180 can be adjustable and removable.

Referring now to Figures 2A and 2B, an exemplary substrate support 200 having a substrate 204 disposed thereon is shown. The substrate holder 200 can include a base or base having an inner portion (eg, corresponding to the ESC) 208 and an outer portion 212. In an example, the outer portion 212 can be movable independently of the inner portion 208 and relative to the inner portion 208. For example, the outer portion 212 can include a bottom ring 216 and a top edge ring 220. Substrate 204 is disposed on inner portion 208 (e.g., on ceramic layer 224) for processing. Controller 228 is in communication with one or more actuators 232 to selectively raise and lower edge ring 220. For example, the edge ring 220 can be raised and/or lowered during processing to adjust the pocket depth of the stand 200. In another example, the edge ring 220 can be raised to facilitate removal and replacement of the edge ring 220.

By way of example only, the edge ring 220 is shown in the fully lowered position in Figure 2A and in the fully raised position in Figure 2B. As shown, the actuator 232 corresponds to a pin actuator configured to selectively extend and retract the pin 236 in a vertical direction. Other suitable types of actuators can be used in other examples. By way of example only, the edge ring 220 corresponds to a ceramic or quartz edge ring, although other suitable materials (e.g., tantalum carbide, tantalum oxide, etc.) may be used. In FIG. 2A, controller 228 is in communication with actuator 232 to raise and lower edge ring 220 directly by pin 236. In some examples, inner portion 208 can move relative to outer portion 212.

The features of the example substrate support 300 are shown in more detail in Figures 3A and 3B. The substrate holder 300 includes an insulator ring or plate 304 and a bottom plate (eg, a bottom plate of the ESC) 308 disposed on the insulator plate 304. The bottom plate 308 supports a ceramic layer 312 that is configured to support a substrate 316 disposed thereon for processing. In FIG. 3A, ceramic layer 312 has a non-stepped configuration. In FIG. 3B, the ceramic layer 312 has a stepped configuration. The substrate support 300 includes a bottom ring 320 that supports an upper ("top") edge ring 324. One or more through holes or guide channels 328 may be formed through insulator plate 304, bottom ring 320, and/or bottom plate 308 to accommodate individual lift pins 332 configured to selectively raise and lower edge ring 324. For example, the guide channel 328 acts as a pin alignment hole for an individual of the lift pins 332. As shown in FIG. 3B, the substrate holder 300 can further include an intermediate ring 336 disposed between the bottom ring 320 and the edge ring 324. In a stepped configuration, the intermediate ring 336 overlaps the ceramic layer 312 and is configured to support the outer edge of the substrate 316.

The lift pins 332 can comprise a corrosion resistant material such as sapphire. The outer surface of the lift pin 332 can be smoothly polished to reduce friction between the lift pin 332 and the structural features of the bottom ring 320 to promote motion. In some examples, one or more ceramic sleeves 340 can be disposed in the guide channels 328 around the lift pins 332. Each of the lift pins 332 can include a rounded upper end 344 to minimize the contact area between the upper end 344 and the edge ring 324. The smooth outer surface, the rounded upper end 344, the guide channel 328, and/or the ceramic sleeve 340 facilitates the raising and lowering of the edge ring 324 while at the same time preventing the lift pin 332 from sticking during movement.

As shown in FIG. 3A, the bottom ring 320 includes guiding features 348. In FIG. 3B, the intermediate ring 336 includes a guiding feature 348. For example, the guide feature 348 corresponds to a raised annular edge 352 that extends upward from the bottom ring 320 / intermediate ring 336. In FIG. 3A, guide channel 328 and lift pin 332 extend through guide feature 348 to engage edge ring 324. Conversely, in FIG. 3B, the guide channel 328 and the lift pin 332 extend through the bottom ring 320 to engage the edge ring 324 without passing through the intermediate ring 336.

The edge ring 324 includes an annular bottom groove 356 that is configured to receive the guiding feature 348. For example, the contour (ie, cross-sectional) shape of the edge ring 324 can generally correspond to a "U" shape configured to receive the guiding feature 348, although other suitable shapes can be used. Moreover, while the upper surface of the edge ring 324 is shown as being substantially horizontal (ie, parallel to the upper surface of the substrate support 300), in other examples, the upper surface of the edge ring 324 can have a different profile. For example, the upper surface of the edge ring 324 can be sloped or angled, rounded, or the like. In some examples, the upper surface of the edge ring 324 is angled such that the thickness at the inner diameter of the edge ring 324 is greater than the thickness at the outer diameter of the edge ring 324 to compensate for corrosion at the inner diameter.

Accordingly, the bottom surface of the edge ring 324 is configured to be complementary to the upper surface of the bottom ring 320 of FIG. 3A, or the individual surfaces of the bottom ring 320 and the intermediate ring 336 of FIG. 3B. Moreover, the interface 360 between the edge ring 324 and the bottom ring 320/intermediate ring 336 is intricate. In other words, the lower surface of the edge ring 324 and the corresponding interface 360 comprise a plurality of directional changes (eg, a 90 degree change in direction, an upward and downward step, alternating horizontal and vertical orthogonal paths, etc.) rather than A direct (e.g., direct line of sight) path to the internal structure of the substrate support 300 is provided between the edge ring 324 and the bottom ring 320 / intermediate ring 336. In general, the potential for leakage of plasma and process materials may increase within the substrate support that includes multiple interface rings, such as one or more of the top edge ring 324 and the intermediate ring 336 and the bottom ring 320. This possibility may increase further as the movable edge ring 324 rises during processing. Thus, interface 360 (and in particular the contour of edge ring 324) is configured to prevent process materials, plasma, etc. from reaching the internal structure of substrate support 300.

For example, as shown in FIG. 3A, interface 360 includes five directional changes to limit access to guide channel 328 and lift pin 332, ceramic layer 312, back and edges of substrate 316, and the like. Conversely, as shown in FIG. 3B, interface 360 includes seven directional changes in first path 364 and five directional changes in second path 368 to limit access to guide channel 328 and lift pin 332, ceramic layer 312. The back surface and edge of the substrate 316, the bonding layer 372, the sealing member 376, and the like. Therefore, the interface 360 reduces the possibility of plasma leakage and ignition, corrosion, and the like that affect the internal structure of the substrate holder 300.

The contour (i.e., cross-sectional) shape of the edge ring 324 (and the interface surface of the bottom ring 320, the intermediate ring 336, etc.) is designed to facilitate manufacturing and reduce manufacturing costs. For example, the walls 380, 384 of the groove 356 and the guiding features 348 can be substantially vertical (eg, compared to parabolic, trapezoidal, triangular, etc.) to facilitate fabrication while preventing leakage of plasma and process materials. By way of example only, substantially vertical may be defined as being perpendicular to the upper and/or lower surface of the edge ring 324, within 1° of the normal to the upper and/or lower surface of the edge ring 324, parallel to the direction of motion of the edge ring 324, etc. . Moreover, the vertical walls 380, 384 maintain alignment of the edge ring 324 relative to the guiding features 348 during movement of the edge ring 324. Conversely, when the individual contours of the groove 356 and the guiding feature 348 are parabolic, trapezoidal, triangular, etc., the upward movement of the edge ring 324 results in significant separation between the wall 380 and the wall 384.

The surfaces of the edge ring 324, the bottom ring 320, and the intermediate ring 336 within the interface 360 (and particularly within the recess 356) are relatively smooth and continuous to cause the edge ring 324 and guide during movement of the edge ring 324 The friction between the features 348 is minimized. For example, individual surfaces of edge ring 324, bottom ring 320, and intermediate ring 336 within interface 360 may undergo additional polishing to achieve a desired surface smoothness. In other examples, the surfaces of the edge ring 324, the bottom ring 320, and the intermediate ring 336 within the interface 360 can be coated with a material that further reduces friction. In still other examples, the surfaces of the edge ring 324, the bottom ring 320, and the intermediate ring 336 within the interface 360 (and particularly the edge ring 324) may have no screw holes and/or similar component features. In this way, particles generated due to contact between the surfaces (e.g., during movement of the edge ring 324) can be minimized.

When the edge ring 324 is raised during processing for adjustment as described above, the controller 228 as depicted in Figures 2A and 2B is configured to limit the adjustable range of the edge ring 324 according to the height H of the guiding feature 348. . For example, the adjustable range can be limited to less than the height H of the guiding feature 348. For example, if the guiding feature 348 has a height H of about 0.24" (eg, 0.22" - 0.26"), the adjustable range of the edge ring 324 can be 0.25". In other words, the edge ring 324 can be raised from a fully lowered position (eg, 0.0") to a fully raised position without completely removing the guiding feature 348 from the groove 356 in the edge ring 324 ( For example: 0.25"). Thus, even in the fully raised position, the edge ring 324 overlaps at least a portion of the guiding feature 348. Limiting the extent of the edge ring 324 in this manner maintains the intricate interface 360 as described above and prevents lateral misalignment of the edge ring 324. The depth of the groove 356 can be approximately equal to the height H of the guiding feature 348 (eg, within 5%). The depth of the groove 356 can be at least 50% of the thickness of the edge ring. By way of example only, the adjustable range of the edge ring 324 of Figure 3A is 0.15" to 0.25", while the adjustable range of the edge ring 324 of Figure 3B is 0.05" to 0.15". For example, the thickness (ie, height) of the edge ring 324 can be between about 0.50" (eg, 0.45" to 0.55") and about 0.6" (eg, 0.58" to 0.620"), and the depth of the groove 356 It can be about 0.30" (for example: 0.29" to 0.31").

For example, "thickness" of edge ring 324 as used herein may refer to the thickness of edge ring 324 at the inner diameter of edge ring 324 (eg, thickness/height of edge ring 324 at inner wall 388). In some examples, the thickness of the edge ring 324 may not be uniform over the entire upper surface of the edge ring 324 (eg, the upper surface of the edge ring 324 may be sloped as described above such that the thickness at the inner wall 388 is greater than the edge ring 324 Thickness at the diameter). However, since corrosion caused by exposure to the plasma may increase relative to the outer diameter of the edge ring 324 at the inner wall 388, the edge ring 324 may be formed such that the inner wall 388 has at least a predetermined thickness to compensate for the increase at the inner wall 388. Corrosion. By way of example only, the inner wall 388 is substantially vertical to avoid contact with the substrate 316 during movement of the edge ring 324.

Referring now to Figures 4A, 4B, and 4C, another example substrate support 400 is shown in greater detail. The substrate holder 400 includes an insulator ring or plate 404 and a bottom plate 408 disposed on the insulator plate 404. The bottom plate 408 supports a ceramic layer 412 that is configured to support a substrate 416 disposed thereon for processing. In Figure 4A, the ceramic layer 412 has a non-stepped configuration. In Figures 4B and 4C, the ceramic layer 412 has a stepped configuration. The substrate support 400 includes a bottom ring 420 that supports an upper edge ring 424. In a stepped configuration, the edge ring 424 overlaps the ceramic layer 412. One or more through holes or guide channels 428 may be formed through insulator plate 404, bottom ring 420, and/or bottom plate 408 to accommodate individual lift pins 432 configured to selectively raise and lower edge ring 424. For example, the guide channel 428 acts as a pin alignment hole for the individual of the lift pins 432.

In the examples of FIGS. 4A, 4B, and 4C, the edge ring 424 is configured to support the outer edge of the substrate 416 disposed on the ceramic layer 412. For example, the inner diameter of the edge ring 424 includes a step 434 configured to support the outer edge of the substrate 416. Thus, the edge ring 424 can be raised and lowered to facilitate removal and replacement of the edge ring 424, but may not rise and fall during processing (ie, the edge ring 424 is non-adjustable). For example, the edge ring 424 can be raised using the lift pins 432 for removal and replacement (eg, using the robot 170).

In an example, the lower inner corner 隅 436 of the edge ring 424 can be chamfered to facilitate alignment (ie, centering) of the edge ring 424 on the substrate support 400. Conversely, the upper outer corner 隅 444 and/or the lower inner corner 448 of the ceramic layer 412 may be chamfered complementarily for the corner 436. Thus, when the edge ring 424 is lowered on the substrate support 400, the chamfered corners 436 interact with the chamfered corners 444/448 to cause the edge ring 424 to self-center on the substrate support 400.

The upper outer corner 456 of the edge ring 424 can be chamfered to facilitate removal of the edge ring 424 from the processing chamber 102. For example, since the substrate holder 400 is configured for in-situ removal of the edge ring 424 (ie, without fully opening and exhausting the processing chamber 102), the edge ring 424 is configured to pass through the plenum Remove. Typically, the size of the plenum is selected to accommodate a substrate of a predetermined size (e.g., 300 mm). However, the edge ring 424 has a significantly larger diameter than the substrate 416 and a typical edge ring 424 may not be suitable for passage through the plenum. Thus, the diameter of the edge ring 424 is reduced (e.g., as compared to the edge ring 324 shown in Figures 3A and 3B). For example, the outer diameter of the edge ring 324 is similar to the outer diameter of the bottom ring 320. Conversely, the outer diameter of the edge ring 424 is significantly smaller than the outer diameter of the bottom ring 420. By way of example only, the outer diameter of the edge ring 424 is less than or equal to about 13" (eg, 12.5" to 13"). The chamfering of the outer corner 456 further facilitates the transfer of the edge ring 424 through the plenum.

For example only, the chamfer of the outer corner turns may have a height of 0.050" to 0.070", a width of 0.030" to 0.050", and an angle of 25-35 degrees. In some examples, the chamfer of the lower corner 隅 436 can have a height of about 0.025" (eg, 0.015" to 0.040"), a width of about 0.015" (eg, 0.005" to 0.030"), and about 60° (50). -70°) angle. By way of example only, the thickness (ie, height) of the edge ring 424 is about, but not greater than, 0.275" (eg, 0.25" to 0.30"). For example, the thickness of the edge ring 424 may not exceed the plenum of the processing chamber 102. Height, to allow removal of the edge ring 424. By way of example only, the "thickness" of the edge ring 424 as used herein may mean the edge ring 424 at the inner diameter of the edge ring 424 as described above with respect to Figures 3A and 3B. Thickness (e.g., thickness/height of edge ring 424 at inner wall 458).

As shown in FIG. 4C, the bottom ring 420 includes a guiding feature 460. For example, the guide feature 460 corresponds to a raised annular edge 464 that extends upwardly from the bottom ring 420. Guide channel 428 and lift pins 432 extend through bottom ring 420 to engage edge ring 424. The edge ring 424 includes an annular bottom groove 468 that is configured to receive the guiding feature 460. For example, the contour of the edge ring 424 can generally correspond to a "U" shape configured to receive the guiding feature 460.

Thus, similar to the examples of FIGS. 3A and 3B, the bottom surface of edge ring 424 in FIG. 4C is configured to complement the individual upper surfaces of bottom ring 420 and ceramic layer 412 to form an intricate interface 472. In other words, interface 472 includes multiple directional changes (eg, a 90 degree change in direction) rather than providing a direct path to the internal structure of substrate support 400 between edge ring 424 and bottom ring 420. In some examples, portions of the guiding feature 460, the edge ring 424, the bottom ring 420, and/or the ceramic layer 412 within the interface 472 can be chamfered to facilitate alignment of the edge ring 424 on the substrate support 400 ( That is, set). For example, the lower inner corner 隅 476 of the inner diameter of the edge ring 424 and the lower inner corner 480 and/or the upper outer corner 484 of the corresponding ceramic layer 412 are chamfered. In other examples, the mechanical alignment of the guiding features 460 within the recess 468 centers the edge ring 424. In some examples, the chamfer of the lower corner 隅 476 can have a height of approximately 0.025" (eg, 0.015" to 0.040"), a width of approximately 0.015" (eg, 0.005" to 0.030"), and approximately 60° (eg, :50-60°) angle.

Referring now to Figures 5A and 5B, another example substrate support 500 is shown in greater detail. The substrate holder 500 includes an insulator ring or plate 504 and a bottom plate 508 disposed on the insulator plate 504. The bottom plate 508 supports a ceramic layer 512 that is configured to support a substrate 516 disposed thereon for processing. In Figure 5A, the ceramic layer 512 has a non-stepped configuration. In FIG. 5B, the ceramic layer 512 has a stepped configuration. The substrate support 500 includes a bottom ring 520 that supports an upper edge ring 524 (shown in Figure 5A) or an upper edge ring 526 (shown in Figure 5B). One or more through holes or guide channels 528 may be formed through the insulator plate 504, the bottom ring 520, and/or the bottom plate 508 to accommodate individual lift pins configured to selectively raise and lower the edge rings 524/526 532. For example, the guide channel 528 acts as a pin alignment hole for the individual of the lift pins 532. As shown in FIG. 5B, the substrate support 500 can further include an intermediate ring 536 disposed between the bottom ring 520 and the edge ring 526. In a stepped configuration, the intermediate ring 536 overlaps the ceramic layer 512 and is configured to support the outer edge of the substrate 516.

The examples of Figures 5A and 5B incorporate the features of the adjustable edge ring 324 of Figures 3A and 3B and the removable/replaceable edge ring of Figures 4A, 4B, and 4C. For example, even in the stepped configuration of FIG. 5B, the edge ring 526 does not extend under the substrate 516 and supports the substrate 516. Thus, the edge ring 524/526 can be raised and lowered during processing. By way of example only, the adjustable range of the edge ring 524 of Figure 5A is 0.05" to 0.15", while the adjustable range of the edge ring 526 of Figure 5B is 0.02" to 0.05". In addition, the outer diameter of the edge ring 524/526 is reduced as described with respect to Figures 4A, 4B, and 4C to facilitate transfer of the edge ring 524/526 through the plenum. Thus, the edge rings 524/526 can be removed and replaced in situ as described above.

As shown in FIG. 5A, the bottom ring 520 includes a guiding feature 540. In FIG. 5B, the intermediate ring 536 includes a guiding feature 540. For example, the guiding feature 540 corresponds to a raised annular edge 544 that extends upward from the bottom ring 520 / intermediate ring 536. In each of FIGS. 5A and 5B, the guide channel 528 and the lift pin 532 extend through the bottom ring 520 to engage the edge ring 524/526. For example, the edge ring 524/526 includes an annular bottom groove 548 that is configured to receive the guiding feature 540. For example, the contour of the edge ring 524/526 can generally correspond to a "U" shape configured to receive the guiding feature 540.

Thus, similar to the examples of FIGS. 3A, 3B, and 4C, the bottom surface of the edge ring 524/526 is configured to complement the individual upper surfaces of the bottom ring 520 and the intermediate ring 536 to form an intricate interface 552. In other words, the interface 552 includes multiple directional changes (eg, a 90 degree directional change) rather than providing a direct path to the internal structure of the substrate support 500 between the edge ring 524/526 and the bottom ring 520. In some examples, portions of guide feature 540, edge ring 524/526, bottom ring 520, and/or intermediate ring 536 within interface 552 can be chamfered to facilitate edge ring 524/526 on substrate support 500. Alignment (ie centering). For example, in FIG. 5A, the corners 556 and 558 of the edge ring 524 and the complementary corners 560 of the guiding features 540 and the corners 562 of the bottom ring 520 are chamfered. Conversely, in FIG. 5B, only the corner 556 of the edge ring 526 and the corner 560 of the intermediate ring 536 are chamfered. The upper outer corner 564 of the edge ring 524 can be chamfered to facilitate removal of the edge ring 524 from the processing chamber 102 as described above with respect to Figures 4A, 4B, and 4C.

For example only, the chamfers of the lower corners 556 and 558 may have a height and width of about 0.005" to 0.030" and an angle of about 25 to 35 degrees. For example, the thickness (ie, height) of the edge rings 524/526 can be about but not more than 0.25" (eg, 0.25" to 0.26"), and the depth of the grooves 548 can be 0.200" to 0.220". The difference between the thickness of /526 and the depth of the groove 548 may be not less than 0.075". For example, the thickness of the edge ring 524/526 may not exceed the height of the plenum of the processing chamber 102 to allow removal of the edge ring 524/526. However, the thickness of the edge ring 524/526 can also be maximized without exceeding the height of the plenum to optimize the adjustability of the edge ring 524/526. In other words, because the edge ring 524/526 wears over time, the amount by which the edge ring 524/526 can be raised without replacement needs to increase in proportion to the thickness of the edge ring 524/526. By way of example only, the "thickness" of the edge ring 524/526 as used herein may mean the edge ring 524/526 at the inner diameter of the edge ring 524/526 as described above with respect to Figures 3A, 3B, 4A, 4B, and 4C. The thickness (e.g., the thickness/height of the edge ring 524/5264 at the inner wall 568).

6A and 6B, an example bottom ring 600 (e.g., corresponding to any of the bottom rings 320, 420, or 520) can implement a clocking feature to facilitate alignment of the bottom ring 600 with the insulator ring 604. . The bottom ring 600 includes a plurality of guide channels 608 configured to receive individual lift pins 612 that extend through the insulator ring 604. The bottom ring 600 further includes one or more synchronization features, such as a notch 616. The notch 616 is configured to receive a complementary structure, such as a protrusion 620 that extends upward from the insulator ring 604. Accordingly, the bottom ring 600 can be mounted such that the notches 616 align with the protrusions 620 and receive the protrusions 620 to ensure that the guide channels 608 are aligned with the individual of the lift pins 612.

7A, 7B, and 7C, the substrate support 700 includes example bottom rings 704, 708, and 712 that are arranged to support a top movable edge ring in a non-stepped configuration in accordance with the principles of the present disclosure. For example, as shown in Figure 7A, the bottom ring 704 is configured to support the edge ring 324 of Figure 3A. As shown in Figure 7B, the bottom ring 708 is configured to support the edge ring 424 of Figure 4A. As shown in Figure 7C, the bottom ring 712 is configured to support the edge ring 524 of Figure 5A. The individual upper surfaces of each of the bottom rings 704, 708, and 712 are stepped. In other words, each of the individual upper surfaces has at least two different heights.

The substrate holder 700 includes an insulator ring or plate 716 and a bottom plate (eg, a bottom plate of the ESC) 720 disposed on the insulator plate 716. The bottom plate 720 supports a ceramic layer 724 that is configured to support a substrate thereon for processing. One or more through holes or guide channels 728 may be formed through insulator plate 716 and bottom rings 704, 708, 712 to accommodate lift pins 732 configured to selectively raise and lower individual edge rings. For example, the guide channel 728 acts as a pin alignment hole for the individual of the lift pins 732. The gap between the lift pin 732 and the inner surface of the guide channel 728 is minimized to reduce plasma leakage. In other words, the diameter of the guide passage 728 is only slightly larger than the diameter of the lift pin 732 (for example, 0.005"-0.010"). For example, the lift pins 732 can have a diameter of 0.057"-0.061" and the guide channels 728 have a diameter of 0.063"-0.067". In some examples, the guide channel 728 includes a narrow region 734 that has a smaller diameter than other portions of the guide channel 728 to further limit plasma leakage. For example, the narrow region 734 can have a diameter that is less than the diameter of the guide channel 728 by 0.002-0.004". Similarly, in some examples, the lift pin 732 can include a narrow position within the narrow region 734 of the guide channel 728. region.

As shown in FIG. 7A, the bottom ring 704 includes guiding features 736. For example, the guide feature 736 corresponds to a raised annular edge 740 that extends upwardly from the bottom ring 704. Edge 740 and inner annular edge 742 define a groove 744. Guide channel 728 and lift pin 732 extend through guide feature 736. The upper surface of the bottom ring 704 is configured to complement the bottom surface of the edge ring 324 to form an intricate interface comprising a plurality of directional changes as described above. The individual widths of the grooves 744 and 740 are selected to minimize the gap between the individual vertical surfaces of the grooves 744 and 740 and the complementary vertical surfaces on the bottom of the edge ring 324. For example, the gap can be less than 0.02".

Similarly, as shown in FIG. 7C, the bottom ring 712 includes guiding features 746. For example, the guide feature 746 corresponds to a raised annular edge 748 that extends upwardly from the bottom ring 712. Edge 748 and inner annular edge 750 define a first groove 752, while edge 748 and outer annular edge 754 define a second groove 756. Guide channel 728 and lift pin 732 extend through bottom ring 712. The upper surface of the bottom ring 712 is configured to complement the bottom surface of the edge ring 524 to form an intricate interface comprising a plurality of directional changes as described above. The height of the edge 748 is greater than the height of the inner annular edge 750 to facilitate engagement of the edge 748 with the edge ring 524 prior to contact between the inner annular edge 750 and the edge ring 524.

In some examples, portions of the guide feature 746 and/or the bottom ring 712 can be chamfered to facilitate alignment (ie, centering) of the edge ring 524 on the substrate support 700. For example, the corners 760 and 764 of the guiding feature 746 and the corner 768 of the bottom ring 712 are chamfered. In some examples, the chamfer of the corner 760 can have a height and width of at least about 0.008" (eg, 0.007" to 0.011") and an angle of 15-25. The chamfer of the corner 764 can have at least about 0.01" (Example: 0.01" to 0.02") Height and width and an angle of 20-35°. The chamfer of corner 768 may have a height and width of at least about 0.010" (eg, 0.010" to 0.030") and an angle of 20-35 degrees.

The inner diameters of the bottom rings 704, 708, and 712 can be at least 11.5" (eg, between 11.5" and 11.7"). The outer diameters of the bottom rings 704, 708, and 712 can be no greater than 14" (eg, at 13.8" and 14.1). "between). The stepped inner diameter of the bottom rings 708 and 712 at 772 is selected to accommodate the outer diameter of the edge ring 424 or 524. For example, the outer diameter of the edge ring 424 or 524 can be approximately 12.8" (eg, +/- 0.10"). Thus, the inner diameters of the bottom rings 708 and 712 at 772 can be at least 13.0".

8A, 8B, and 8C, substrate support 800 includes example bottom rings 804, 808, and 812 that are configured to support a top movable edge ring in a stepped configuration in accordance with the principles of the present disclosure. For example, as shown in Figure 8A, the bottom ring 804 is configured to support the edge ring 324 of Figure 3B. As shown in Figure 8B, the bottom ring 808 is configured to support the edge ring 424 of Figure 4C. As shown in Figure 8C, the bottom ring 812 is configured to support the edge ring 526 of Figure 5B. The bottom rings 804 and 812 can be further configured to support the intermediate ring 336 of Figure 3B and the intermediate ring 536 of Figure 5B, respectively. The individual upper surfaces of each of the bottom rings 804, 808, and 812 are stepped. In other words, each of the individual upper surfaces has at least two different heights.

The substrate holder 800 includes an insulator ring or plate 816 and a bottom plate (eg, a bottom plate of the ESC) 820 disposed on the insulator plate 816. The bottom plate 820 supports a ceramic layer 824 that is configured to support a substrate thereon for processing. The bonding layer 828 can be disposed between the bottom plate 820 and the ceramic layer 824 with the seal 832 surrounding the bonding layer 828. One or more through holes or guide channels 836 can be formed through the insulator plate 816 and the bottom rings 804, 808, 812 to accommodate the lift pins 840 configured to selectively raise and lower the individual edge rings. For example, the guide channel 836 acts as a pin alignment hole for an individual of the lift pins 840. The gap between the lift pins 840 and the inner surface of the guide passage 836 is minimized to reduce plasma leakage. In other words, the diameter of the guide channel 836 is only slightly larger than the diameter of the lift pin 840 (e.g., 0.005" - 0.010"). For example, the lift pin 840 can have a diameter of 0.1" and the guide channel 836 has a diameter of 0.105". In some examples, the guide channel 836 includes a narrow region 842 having a smaller diameter than other portions of the guide channel 836 to further limit plasma leakage. For example, the narrow region 842 can have a diameter that is 0.002-0.004" smaller than the diameter of the guide channel 836. In some examples, one or more ceramic sleeves 844 can be disposed within the guide channel 836 that surrounds the lift pins 840. .

As shown in FIG. 8B, the bottom ring 808 includes guiding features 846. For example, the guide feature 846 corresponds to a raised annular edge 848 that extends upward from the bottom ring 808. Edge 848 and outer annular edge 850 define a groove 852. The upper surface of the bottom ring 808 is configured to complement the bottom surface of the edge ring 424 to form an intricate interface comprising a plurality of directional changes as described above. The individual widths of the grooves 852 and 848 are selected to minimize the gap between the individual vertical surfaces of the grooves 852 and 848 and the complementary vertical surfaces on the bottom of the edge ring 424. For example, the gap can be less than 0.010". Conversely, as shown in Figures 8A and 8C, the bottom rings 804 and 812 are configured to support intermediate rings 336 and 536 having individual guiding features 348 and 540. The upper surfaces of the bottom rings 804 and 812 are configured to bond the upper surfaces of the intermediate rings 336 and 536, complementary to the bottom surfaces of the edge rings 324 and 526 to form an intricate interface comprising a plurality of directional changes as described above.

In the example where the guide channel 836 includes a ceramic sleeve 844 (eg, the guide channel 836 is routed through the bottom plate 820), the bottom rings 804, 808, and 812 can be configured to receive the ceramic sleeve 844. For example, the bottom rings 804, 808, and 812 can include gap features, such as holes or slits 856 that are larger than the diameter of the guide channels 836 to accommodate the upper ends of the ceramic sleeves 844. In some examples, the bottom rings 804, 808, and 812 can be mounted after the lift pins 840. Accordingly, individual openings in the bottom rings 804, 808, and 812 can include chamfered edges 860 to facilitate mounting of the bottom rings 804, 808, and 812 on the lift pins 840. For example, the chamfer of the edge 860 can have a height and width of 0.020" to 0.035" and an angle of 40-50 degrees.

As shown in Figures 8B and 8C, the stepped inner diameters of the bottom rings 808 and 812 at 862 are selected to accommodate the outer diameter of the edge ring 424 of Figure 4C and the edge ring 526 of Figure 5B. For example, the outer diameters of the edge rings 424 and 526 can be approximately 12.8" (eg, +/- 0.10"). Thus, the inner diameters of the bottom rings 808 and 812 at 862 can be at least 13.0". Thus, the gap between the bottom rings 808 and 812 and the outer diameters of the edge rings 424 and 526 can be minimized while still preventing the bottom ring. Contact between the vertical surfaces of 808 and 812 and edge rings 424 and 526.

In some examples, as shown in FIG. 8B, the bottom ring 808 can include a first outer diameter at 864 and a second outer diameter at 868. The second outer diameter at 868 is greater than the first outer diameter at 864. For example, the substrate support 800 can include a liner 872 that protects the outer portions of the insulator plate 816, the bottom plate 820, the bottom ring 808, and the like. However, the liner 872 may not protect the upper portion of the bottom ring 808 exposed to the plasma and may experience increased corrosion of the bottom ring 808 in the region adjacent the upper edge 876 of the bottom plate 820 (as indicated by the dashed arrow 880). . Thus, the bottom ring 808 contains additional material at the second outer diameter 868 to compensate for the increased corrosion.

Referring now to Figure 9, an example intermediate ring 900 is shown. The intermediate ring 900 can be disposed in an arrangement in which the top edge ring is otherwise supported by the upper surfaces of two different components of the substrate support. For example, as shown in Figures 3B and 5B (corresponding to Figures 8A and 8C, respectively), the top edge ring overlaps the individual ceramic layers and the individual bottom rings. Thus, the intermediate ring 900 is configured to support a portion of the top edge ring that is otherwise supported by the ceramic layer. As shown, the intermediate ring 900 has a "U" shape.

The intermediate ring 900 includes an inner annular edge 904 and an outer annular edge 908 that define a groove 912. The grooves 912 are configured to receive individual top edge rings (eg, edge rings 324 or 526). Conversely, the outer annular edge 908 acts as a guiding feature to center the top edge ring 324 or 526 during replacement as described above with respect to Figures 3B and 5B. In some examples, corners 916 and 920 are chamfered to facilitate engagement with the top edge ring. For example, the chamfer of the corner 916 may have a height and width of at least about 0.010" (eg, 0.005" to 0.015") and an angle of about 20 (eg, 15-25). The chamfer of the corner 920 may be There is a height and width of at least about 0.015" (eg, 0.010" to 0.020") and an angle of about 30[deg.] (eg, 25-35 ^o ). The width of the outer annular rim 908 is selected to minimize the gap between the individual vertical surfaces of the outer annular rim 908 and the complementary vertical surfaces on the bottom of the edge ring 324 or 526. For example, the gap can be less than 0.010" to limit plasma leakage.

10A and 10B, two cross-sectional views of the substrate support 1000 depict a bottom ring 1004 that is configured to support a top movable edge ring in a stepped configuration in accordance with the principles of the present disclosure. For example, the bottom ring 1004 is configured to support an edge ring (eg, 526) in a configuration similar to that shown in Figures 5B and 8C. The bottom ring 1004 can be further configured to support the intermediate ring similar to the configuration shown in Figure 5B.

The substrate support 1000 includes an insulator ring or plate 1008 and a bottom plate (eg, a bottom plate of an ESC) 1012 disposed on the insulator plate 1008. The bottom plate 1012 supports a ceramic layer 1016 that is configured to support a substrate thereon for processing. The bonding layer 1020 can be disposed between the bottom plate 1012 and the ceramic layer 1016, and the seal 1024 surrounds the bonding layer 1020. As shown in FIG. 10A, one or more through holes or guide channels 1028 can be formed through the insulator plate 1008, the bottom plate 1012, and the bottom ring 1004 to accommodate lift pins configured to selectively raise and lower the edge rings. 1032. For example, the guide channel 1028 acts as a pin alignment hole for an individual of the lift pins 1032. The gap between the lift pin 1032 and the inner surface of the guide channel 1028 is minimized to reduce plasma leakage. In other words, the diameter of the guide channel 1028 is only slightly larger than the diameter of the lift pin 1032 (eg, 0.005"-0.010"). For example, the lift pin 1032 can have a diameter of 0.1" and the guide channel 1028 has a diameter of 0.105". In some examples, the guide channel 1028 includes a narrow region 1036 having a smaller diameter than other portions of the guide channel 1028 to further limit plasma leakage. For example, the narrow region 1036 can have a diameter that is 0.002-0.004" smaller than the diameter of the guide channel 1028. In some examples, one or more ceramic sleeves 1040 can be disposed within the guide channel 1028 that surrounds the lift pin 1032. .

The substrate support 1000 can include a pad 1044 that is configured to surround and protect components of the substrate support 1000, such as an insulator plate 1008, a bottom plate 1012, and a bottom ring 1004. The bottom ring 1004, as shown in Figures 10A and 10B, includes an annular lip 1048 that extends radially outward from the bottom ring 1004 on the pad 1044. The lip 1048 facilitates the mounting and removal of the bottom ring 1004 when the pad 1044 is present.

As shown in FIG. 10B, the bottom plate 1012 can be coupled to the insulator plate 1008 using bolts 1052 that are inserted into the individual bolt mounting holes 1056. A ceramic plug 1060 is disposed on the bolt 1052 to prevent leakage of plasma between the bolt mounting hole 1056 and between the bottom ring 1004 and the bottom plate 1012. The bottom ring 1004 as shown in FIG. 10B includes a gap feature, such as a void or slit 1064 to accommodate the ceramic plug 1060.

The above description is intended to be illustrative only and is not intended to limit the disclosure, its application, or use. The broad teachings of the present disclosure can be performed in a variety of ways. Accordingly, the present disclosure is to be construed as being limited by the scope of the present disclosure. It should be understood that one or more steps of the method can be performed in a different order (or concurrently) without changing the principles of the present disclosure. Furthermore, although various embodiments have certain features as described above, any one or more of the features described in relation to any embodiment of the present disclosure can be implemented in conjunction with features of any other embodiment, even if the combination is Not explicitly described as well. In other words, the described embodiments are not mutually exclusive, and replacement of one or more embodiments with one another is still within the scope of this disclosure.

The spatial and functional relationships between components (eg, between modules, circuit components, semiconductor layers, etc.) are described in terms of "connections", "joining", "coupling", "adjacent", "side" , "above", "above", "below", and "config". When the relationship between the first and second elements is described in the above disclosure, unless explicitly described as "directly", the relationship may be a direct relationship in which no other intervening elements are present in the first Between the second elements, but also in an indirect relationship, wherein one or more intervening elements are present (either spatially or functionally) between the first and second elements. When used herein, the phrase "at least one of A, B, and C" shall be understood to mean the logic (A or B or C) that uses a non-exclusive logical "or" and should not be construed as indicating " At least one of A, at least one of B, and at least one of C".

In some embodiments, the controller is part of a system that can be part of the above examples. Such systems may include semiconductor processing equipment including processing tools or complex processing tools, chambers or complex chambers, platforms or complex platforms for processing, and/or specific processing components (wafer pedestals, airflow systems, etc.) . These systems can be integrated with electronic devices for controlling the operation of these systems before, during, and after processing semiconductor wafers or substrates. An electronic device can be referred to as a "controller" that can control many components or sub-portions of a system or a plurality of systems. Depending on the processing needs and/or type of system, the controller can be programmed to control any of the processes disclosed herein, including: delivery of process gases, temperature settings (eg, heating and/or cooling), pressure settings, vacuum settings, power settings , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operational settings, access to a tool and other transfer tools, and/or load locks connected or interfaced with a particular system Department of wafer transfer.

Broadly speaking, a controller can be defined as an electronic device having a plurality of integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuit may include a die in the form of firmware for storing program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and/or one or more executable program instructions (eg, software). Multiple microprocessors or microcontrollers. The program instructions are instructions that communicate with the controller in a number of individual settings (or program files) that define operational parameters for performing special processes on the semiconductor wafer or system. In some embodiments, the operational parameters may be part of a formulation defined by a process engineer, in one or more layers, materials, metals, oxides, ruthenium, ruthenium dioxide, surfaces, circuits, and/or crystals. One or more processing steps are completed during the manufacture of the round grains.

In some embodiments, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be remote access to wafer processing in whole or in part of the "cloud" or fab host computer system. The computer may allow remote access to the system to monitor the current progress of the manufacturing operation, check the history of past manufacturing operations, check trends or performance metrics from the complex manufacturing operations, to change the currently processed parameters to set the current operation Process steps or start a new process. In some examples, a remote computer (eg, a server) can provide a process recipe to the system via a network, which can include a regional network or an internet network. The remote computer can include a user interface that allows for input and programming of parameters and/or settings that are then passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data that explicitly specifies parameters of the various processing steps that will be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be executed and the type of tool to which the controller is configured or controlled. Thus, as noted above, the controller can be decentralized, such as by including one or more distributed controllers that are networked together and toward a common purpose (such as the process and control described herein). operation. An example of a decentralized controller for such purposes would be one or more integrated circuits in the chamber that communicate one or more of the products at the far end (such as at the platform level or as part of a remote computer). Body circuits, combined to control the process in the chamber.

Without limitation, the example system can include a plasma etch chamber or module, a deposition chamber or module, a spin-wash chamber or module, a metal plating chamber or module, a cleaning chamber or module, Bevel etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with or used in the manufacture and/or manufacture of semiconductor wafers.

As described above, the controller can communicate with one or more of the following according to a process step or a plurality of process steps to be performed by the tool: other tool circuits or modules, other tool components, group tools, other tool interfaces, adjacent tools, phases Neighboring tools, tools located throughout the plant, host computers, another controller, or tools for material transfer, such tools for material transfer carry wafer containers into and out of the tool location within the semiconductor manufacturing facility and/or Or load side.

The above description is intended to be illustrative only and is not intended to limit the disclosure, its application, or use. The broad teachings of the present disclosure can be performed in a variety of ways. Accordingly, the present disclosure is to be construed as being limited by the scope of the present disclosure. It should be understood that one or more steps of the method can be performed in a different order (or concurrently) without changing the principles of the present disclosure. Furthermore, although various embodiments have certain features as described above, any one or more of the features described in relation to any embodiment of the present disclosure can be implemented in conjunction with features of any other embodiment, even if the combination is Not explicitly described as well. In other words, the described embodiments are not mutually exclusive, and replacement of one or more embodiments with one another is still within the scope of this disclosure.

The spatial and functional relationships between components (eg, between modules, circuit components, semiconductor layers, etc.) are described in terms of "connections", "joining", "coupling", "adjacent", "side" , "above", "above", "below", and "config". When the relationship between the first and second elements is described in the above disclosure, unless explicitly described as "directly", the relationship may be a direct relationship in which no other intervening elements are present in the first Between the second elements, but also in an indirect relationship, wherein one or more intervening elements are present (either spatially or functionally) between the first and second elements. When used herein, the phrase "at least one of A, B, and C" shall be understood to mean the logic (A or B or C) that uses a non-exclusive logical "or" and should not be construed as indicating " At least one of A, at least one of B, and at least one of C".

In some embodiments, the controller is part of a system that can be part of the above examples. Such systems may include semiconductor processing equipment including processing tools or complex processing tools, chambers or complex chambers, platforms or complex platforms for processing, and/or specific processing components (wafer pedestals, airflow systems, etc.) . These systems can be integrated with electronic devices for controlling the operation of these systems before, during, and after processing semiconductor wafers or substrates. An electronic device can be referred to as a "controller" that can control many components or sub-portions of a system or a plurality of systems. Depending on the processing needs and/or type of system, the controller can be programmed to control any of the processes disclosed herein, including: delivery of process gases, temperature settings (eg, heating and/or cooling), pressure settings, vacuum settings, power settings , radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operational settings, access to a tool and other transfer tools, and/or load locks connected or interfaced with a particular system Department of wafer transfer.

Broadly speaking, a controller can be defined as an electronic device having a plurality of integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuit may include a die in the form of firmware for storing program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and/or one or more executable program instructions (eg, software). Multiple microprocessors or microcontrollers. The program instructions are instructions that communicate with the controller in a number of individual settings (or program files) that define operational parameters for performing special processes on the semiconductor wafer or system. In some embodiments, the operational parameters may be part of a formulation defined by a process engineer, in one or more layers, materials, metals, oxides, ruthenium, ruthenium dioxide, surfaces, circuits, and/or crystals. One or more processing steps are completed during the manufacture of the round grains.

In some embodiments, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be remote access to wafer processing in whole or in part of the "cloud" or fab host computer system. The computer may allow remote access to the system to monitor the current progress of the manufacturing operation, check the history of past manufacturing operations, check trends or performance metrics from the complex manufacturing operations, to change the currently processed parameters to set the current operation Process steps or start a new process. In some examples, a remote computer (eg, a server) can provide a process recipe to the system via a network, which can include a regional network or an internet network. The remote computer can include a user interface that allows for input and programming of parameters and/or settings that are then passed from the remote computer to the system. In some examples, the controller receives instructions in the form of data that explicitly specifies parameters of the various processing steps that will be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be executed and the type of tool to which the controller is configured or controlled. Thus, as noted above, the controller can be decentralized, such as by including one or more distributed controllers that are networked together and toward a common purpose (such as the process and control described herein). operation. An example of a decentralized controller for such purposes would be one or more integrated circuits in the chamber that communicate one or more of the products at the far end (such as at the platform level or as part of a remote computer). Body circuits, combined to control the process in the chamber.

Without limitation, the example system can include a plasma etch chamber or module, a deposition chamber or module, a spin-wash chamber or module, a metal plating chamber or module, a cleaning chamber or module, Bevel etching chamber or module, physical vapor deposition (PVD) chamber or module, chemical vapor deposition (CVD) chamber or module, atomic layer deposition (ALD) chamber or module, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with or used in the manufacture and/or manufacture of semiconductor wafers.

As described above, the controller can communicate with one or more of the following according to a process step or a plurality of process steps to be performed by the tool: other tool circuits or modules, other tool components, group tools, other tool interfaces, adjacent tools, phases Neighboring tools, tools located throughout the plant, host computers, another controller, or tools for material transfer, such tools for material transfer carry wafer containers into and out of the tool location within the semiconductor manufacturing facility and/or Or load side.

100‧‧‧Substrate processing system

102‧‧‧ chamber

104‧‧‧Upper electrode

106‧‧‧Substrate support

108‧‧‧Substrate

109‧‧‧Sprinkler

110‧‧‧floor

112‧‧‧Ceramic layer

114‧‧‧ Thermal resistance layer (bonding layer)

116‧‧‧ channel

120‧‧‧RF generation system

122‧‧‧RF voltage generator

124‧‧‧Matching and distribution networks

130‧‧‧Gas delivery system

132‧‧‧ gas source

134‧‧‧ valve

136‧‧‧Flow Controller

140‧‧‧Management

142‧‧‧ Temperature Controller

144‧‧‧ heating element

146‧‧‧ coolant assembly

150‧‧‧ valve

152‧‧‧

160‧‧‧ Controller

170‧‧‧Robot

172‧‧‧Load lock

176‧‧‧Seal

180‧‧‧Edge ring

184‧‧‧ bottom ring

200‧‧‧Support

204‧‧‧Substrate

208‧‧‧ internal part

212‧‧‧External part

216‧‧‧ bottom ring

220‧‧‧Edge ring

224‧‧‧Ceramic layer

228‧‧‧ Controller

232‧‧‧Actuator

236‧‧ sales

300‧‧‧Substrate support

304‧‧‧Insulator board

308‧‧‧floor

312‧‧‧Ceramic layer

316‧‧‧Substrate

320‧‧‧ bottom ring

324‧‧‧Edge ring

328‧‧‧ Guide channel

332‧‧‧lifting pin

336‧‧‧Intermediate ring

340‧‧‧Ceramic sleeve

344‧‧‧Upper

348‧‧‧Guidance feature

352‧‧‧Circular edge

356‧‧‧ Groove

360‧‧‧ interface

364‧‧‧First path

368‧‧‧Second path

372‧‧‧Connection layer

376‧‧‧Seal

380‧‧‧ wall

384‧‧‧ wall

388‧‧‧ inner wall

400‧‧‧Substrate support

404‧‧‧Insulator board

408‧‧‧floor

412‧‧‧Ceramic layer

416‧‧‧Substrate

420‧‧‧ bottom ring

424‧‧‧Edge ring

428‧‧‧ Guide channel

432‧‧‧lifting pin

434‧‧‧ steps

436‧‧‧Corner

444‧‧‧Corner

448‧‧‧Corner

456‧‧‧Corner

458‧‧‧ inner wall

460‧‧‧Guidance Features

464‧‧‧ring edge

468‧‧‧ Groove

472‧‧‧ interface

476‧‧‧Corner

480‧‧‧Corner

484‧‧‧Corner

500‧‧‧Substrate support

504‧‧‧Insulator board

508‧‧‧floor

512‧‧‧Ceramic layer

516‧‧‧Substrate

520‧‧‧ bottom ring

524‧‧‧Edge ring

526‧‧‧Edge ring

528‧‧‧ Guide channel

532‧‧‧lifting pin

536‧‧‧Intermediate ring

540‧‧‧Guidance feature

544‧‧‧ring edge

548‧‧‧ Groove

552‧‧‧ interface

556‧‧‧Corner

558‧‧‧Corner

560‧‧‧Corner

562‧‧‧Corner

564‧‧‧Corner

568‧‧‧ inner wall

600‧‧‧ bottom ring

604‧‧‧Insert ring

608‧‧‧ Guide channel

612‧‧‧lifting pin

616‧‧‧ grooves

620‧‧ ‧ protrusions

700‧‧‧Substrate support

704‧‧‧ bottom ring

708‧‧‧ bottom ring

712‧‧‧ bottom ring

716‧‧‧Insulator board

720‧‧‧floor

724‧‧‧Ceramic layer

728‧‧‧ Guide channel

732‧‧‧lifting pin

734‧‧‧Narrow area

736‧‧‧Guidance Features

740‧‧‧ edge

742‧‧‧ inner ring edge

744‧‧‧ Groove

746‧‧‧Guidance feature

748‧‧‧ edge

750 ‧ ‧ inner ring edge

752‧‧‧First groove

754‧‧‧ outer annular edge

756‧‧‧second groove

760‧‧‧Corner

764‧‧‧Corner

768‧‧‧ corner

800‧‧‧Substrate support

804‧‧‧ bottom ring

808‧‧‧ bottom ring

812‧‧‧ bottom ring

816‧‧‧Insulator board

820‧‧‧floor

824‧‧‧Ceramic layer

828‧‧‧ joint layer

832‧‧‧Seal

836‧‧‧ Guide channel

840‧‧‧lifting pin

842‧‧‧Narrow area

844‧‧‧ceramic sleeve

846‧‧‧Guidance feature

848‧‧‧ edge

850‧‧‧ outer annular edge

852‧‧‧ Groove

856‧‧‧ incision

Edge of 860‧‧

872‧‧‧ liner

876‧‧‧ upper edge

880‧‧‧dotted arrow

900‧‧‧Intermediate ring

904‧‧ inside ring edge

908‧‧‧ outer ring edge

912‧‧‧ Groove

916‧‧‧Corner

920‧‧‧Corner

1000‧‧‧Substrate support

1004‧‧‧ bottom ring

1008‧‧‧Insulator board

1012‧‧‧floor

1016‧‧‧Ceramic layer

1020‧‧‧Connection layer

1024‧‧‧Seal

1028‧‧‧ Guide channel

1032‧‧‧lifting pin

1036‧‧‧Narrow area

1040‧‧‧ceramic sleeve

1044‧‧‧ cushion

1048‧‧‧Lip

1052‧‧‧Bolts

1056‧‧‧Bolt mounting hole

1060‧‧‧ceramic embolism

1064‧‧‧ incision

The present disclosure is more fully understood from the embodiments and the accompanying drawings in which:

1 is a functional block diagram of a processing chamber in accordance with an example of the present disclosure;

2A shows an exemplary movable edge ring in a lowered position in accordance with the present disclosure;

2B shows an exemplary movable edge ring in an elevated position in accordance with the present disclosure;

3A shows a first example substrate holder including a movable edge ring in accordance with the present disclosure;

3B shows a second example substrate holder including a movable edge ring in accordance with the present disclosure;

4A shows a third example substrate holder including a movable edge ring in accordance with the present disclosure;

4B shows a fourth example substrate holder including a movable edge ring in accordance with the present disclosure;

4C shows a fifth example substrate holder including a movable edge ring in accordance with the present disclosure;

5A shows a sixth example substrate holder including a movable edge ring in accordance with the present disclosure;

5B shows a seventh example substrate holder including a movable edge ring in accordance with the present disclosure;

6A shows a bottom view of an example bottom ring of a substrate support in accordance with the present disclosure;

6B shows a clocking feature of a bottom ring of a substrate holder in accordance with the present disclosure;

7A shows a first example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

7B shows a second example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

7C shows a third example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

8A shows a fourth example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

8B shows a fifth example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

8C shows a sixth example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure;

Figure 9 shows an intermediate ring configured to support a movable edge ring in accordance with the present disclosure;

10A and 10B show a seventh example of a bottom ring configured to support a movable edge ring in accordance with the present disclosure.

In the drawings, reference numbers may be reused to identify similar and/or identical elements.

Claims (24)

a bottom ring configured to support a movable edge ring, wherein the edge ring is configured to be raised and lowered relative to a substrate support, the bottom ring comprising: an upper surface, wherein the upper surface is stepped; An annular inner diameter; an annular outer diameter; a lower surface; and a plurality of vertical guiding channels disposed from the lower surface of the bottom ring through the bottom ring to the upper surface of the bottom ring, wherein the guiding Each of the channels includes a first region having a smaller diameter than the guide channel, and wherein the guide channels are configured to receive individual lift pins for raising and lowering the edge ring. The bottom ring of claim 1 wherein the diameter of the guide channel is between 0.063" and 0.067". The bottom ring of claim 1, wherein each of the guide channels includes a cavity on the lower surface of the bottom ring, wherein the holes have a larger diameter than the guide channels . The bottom ring of claim 3, wherein the transition zone between the guiding channel and the cavity is chamfered. The bottom ring of claim 4, wherein the chamfered transition zone has a height and width between 0.020" and 0.035" and an angle between 40o and 50o. The bottom ring of claim 1, wherein the inner diameter of the step in the upper surface is at least 13.0". The bottom ring of claim 1 further includes a guiding feature extending upward from the upper surface of the bottom ring. The bottom ring of claim 7, wherein the guiding channels pass through the guiding feature. The bottom ring of claim 8 wherein the guiding feature comprises the first regions of the guiding channels. The bottom ring of claim 7, wherein the upper surface includes an inner annular edge, and wherein the guiding feature and the inner annular edge define a groove. The bottom ring of claim 10, wherein the guiding feature has a height greater than a height of the inner annular edge. The bottom ring of claim 7, wherein at least one of the first upper corner 隅 and the second upper corner 该 of the guiding feature is chamfered. The bottom ring of claim 7, wherein the upper surface includes an inner annular edge and an outer annular edge, wherein the guiding feature and the inner annular edge define a first groove, and wherein the guiding feature And the outer annular edge defines a second groove. The bottom ring of claim 1, wherein the upper surface comprises at least two changes in direction. The bottom ring of claim 1, wherein the upper surface comprises at least five directional changes. The bottom ring of claim 1, wherein the upper surface comprises at least five alternating vertical and horizontal paths. The bottom ring of claim 1, wherein the bottom ring has a first outer diameter and a second outer diameter greater than the first outer diameter. The bottom ring of claim 1, wherein the bottom ring includes an annular lip extending radially outward from the outer diameter of the bottom ring. The bottom ring of claim 1, wherein the lower surface comprises a plurality of cavities configured to align with the bolt holes in the bottom plate of the substrate holder. An intermediate ring disposed on the bottom ring and supporting the movable edge ring, wherein the edge ring is configured to be raised and lowered relative to the substrate support, the intermediate ring comprising: an upper surface, wherein the upper surface is Stepped; an annular inner diameter; an annular outer diameter; a lower surface; a guiding feature defining the outer diameter of the annular; an inner annular edge defining the inner diameter of the annular; and the guiding feature and the inner A groove defined between the annular edges. The intermediate ring of claim 20, wherein at least one of the first upper corner 隅 and the second upper corner 该 of the guiding feature is chamfered. The intermediate ring of claim 20, wherein the intermediate ring has a "U" shape. The intermediate ring of claim 20, wherein the upper surface comprises at least four direction changes. The intermediate ring of claim 20, wherein the upper surface comprises at least five alternating vertical and horizontal paths.