TW201925082A - A method for producing spherical silicon nitride powder using carbothermal reduction nitridation reaction to reduce an occurrence of excessive carbon residues - Google Patents

A method for producing spherical silicon nitride powder using carbothermal reduction nitridation reaction to reduce an occurrence of excessive carbon residues Download PDF

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TW201925082A
TW201925082A TW106142480A TW106142480A TW201925082A TW 201925082 A TW201925082 A TW 201925082A TW 106142480 A TW106142480 A TW 106142480A TW 106142480 A TW106142480 A TW 106142480A TW 201925082 A TW201925082 A TW 201925082A
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spherical
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tantalum nitride
nitride powder
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TWI646045B (en
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吳俊德
賴冠廷
施政宏
郭養國
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國家中山科學研究院
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Abstract

A method for producing a spherical silicon nitride powder, the steps comprising: (A) providing a silicon oxide powder and a carbon source, dispersing and dissolving the silicon oxide powder and the carbon source in a solvent to form a mixed slurry; (B) spray-granulating the mixed slurry to form a spherical powder; (C) carbonizing the spherical powder in a nitrogen atmosphere to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to a carbothermal reduction nitridation reaction under a nitrogen gas atmosphere to form a spherical silicon nitride powder; and (E) decarburizing the spherical silicon nitride powder in the atmosphere to form a spherical silicon nitride powder with high purity. By combining the steps of raw material mixing, spray granulation, carbonization treatment, carbothermal reduction nitridation reaction, decarburization and the likes, the spherical structure of the silicon nitride powder produced by the present invention has better powder fluidity and the compactness and true density of the block material after the molding process is improved.

Description

一種製備球形氮化矽粉體的方法 Method for preparing spherical tantalum nitride powder

本發明係關於一種氮化矽粉體的製備方法,特別是關於一種製備球形氮化矽粉體的方法。 The present invention relates to a method for preparing a tantalum nitride powder, and more particularly to a method for preparing a spherical tantalum nitride powder.

氮化矽主要應用在高溫結構材料上,它具有極佳的高溫強度,同時具備耐熱、抗腐蝕、耐磨損、抗震等特性,且機械強度又可與金屬材料比擬,同時又是一種高性能電絕緣材料,於切削刀具、陶瓷軸承、耐火材料、高頻元件與半導體產業應用極具發展潛力。 Niobium nitride is mainly used in high-temperature structural materials. It has excellent high-temperature strength, and has the characteristics of heat resistance, corrosion resistance, wear resistance, shock resistance, and mechanical strength comparable to metal materials. It is also a high performance. Electrically insulating materials have great potential for development in cutting tools, ceramic bearings, refractory materials, high frequency components and semiconductor applications.

氮化矽以α及β相兩種結晶形式存在,均是屬於六方晶系且有相似的單位晶胞。一般而言,α相氮化矽屬於低溫型是不穩定的且常含有微量的氧,經驗式為Si12N15O0.5,而β相氮化矽則為較高溫及低氧分壓下的產物,當溫度超過1650℃時,α相氮化矽會直接轉變形成高長徑比的柱狀β相晶粒,而此類晶粒的非均向性分佈可導致裂縫轉折和架橋現象,是氮化矽燒結體具有高強度與高韌性的主因。α相及β相的理論密度值分別是3.18及3.19g/cm3,而氮化矽於一大氣壓的氮氣氣氛下會在1800℃左右發生明顯的熱分解,而在大氣氣氛下或較高氧分壓的環境中時,氮化矽會於其表面形成 一層二氧化矽的保護層並抑制氧化反應的進行。 Cerium nitride exists in both crystalline forms of alpha and beta phases, all of which belong to the hexagonal system and have similar unit cells. In general, α-phase tantalum nitride is unstable and often contains trace amounts of oxygen. The empirical formula is Si 12 N 15 O 0.5 , while the β-phase tantalum nitride is higher temperature and low oxygen partial pressure. The product, when the temperature exceeds 1650 ° C, α-phase tantalum nitride will be directly transformed into columnar β-phase grains with high aspect ratio, and the heterogeneous distribution of such grains can lead to crack turning and bridging. The tantalum nitride sintered body has a main cause of high strength and high toughness. The theoretical density values of the α phase and the β phase are 3.18 and 3.19 g/cm 3 , respectively, and the tantalum nitride undergoes significant thermal decomposition at about 1800 ° C under a nitrogen atmosphere of one atmosphere, and in the atmosphere or higher oxygen. In a partial pressure environment, tantalum nitride forms a protective layer of cerium oxide on its surface and inhibits the oxidation reaction.

氮化矽粉體在工業上常用的製備方法有下列幾種方式:直接氮化法(Direct nitridation)、化學氣相沈積法(Chemical vapor deposition)、醯亞胺熱分解法(Imide thermal decomposition)、燃燒合成法(Combustion synthesis)、碳熱還原法(Carbothermal reduction)等方法。工業上生產氮化矽粉體的主要方式為採用碳熱還原法,主要是將氧化矽或二氧化矽粉體與碳源進行固相混合,在氮氣或氨氣氣氛下使用高溫爐進行粉體燒結製程,利用碳源進行還原反應,以此方法所製備的粉體具粉末細、顆粒大小均勻、產物純度高與可大量生產等優點,因此與矽粉直接氮化法同為目前工業上生產氮化矽粉體的主要方式,生成氮化矽粉末的反應式如下:氮氣:3SiO2(s)+6C(s)+2N2(g) → Si3N4(s)+6CO(g) There are several methods commonly used in the industrial preparation of tantalum nitride powder: direct nitridation, chemical vapor deposition, and imide thermal decomposition. Combustion synthesis, Carbothermal reduction, etc. The main way to produce tantalum nitride powder in the industry is to use a carbothermal reduction method, which mainly involves solid phase mixing of cerium oxide or cerium oxide powder with a carbon source, and powdering using a high temperature furnace under a nitrogen or ammonia atmosphere. The sintering process uses a carbon source for the reduction reaction, and the powder prepared by the method has the advantages of fine powder, uniform particle size, high product purity and mass production, and therefore is directly produced by the direct nitriding method of bismuth powder. The main mode of the tantalum nitride powder is as follows: nitrogen: 3SiO 2 (s) + 6C (s) + 2N 2 (g) → Si 3 N 4 (s) + 6CO (g)

氨氣:3SiO2(s)+6C(s)+4NH3(g) → Si3N4(s)+6CO(g)+6H2(g) Ammonia: 3SiO 2(s) +6C (s) +4NH 3(g) → Si 3 N 4(s) +6CO (g) +6H 2(g)

鐘賢龍等人發明專利「高比表面積α相氮化矽粉體之製造方法」(專利號:I347299),先以NH4NO3作為氧化劑及以glycine(胺基乙酸)與urea(尿素)作為燃料進行溶液燃燒合成法製備反應前趨物粉體(SiO2+C),因反應前趨物其碳與二氧化矽的比例偏低所以額外再加入蔗糖當作碳源,最後將所得到的前趨物以管狀高溫爐於氮氣氣氛中進行熱碳還原氮化反應,得到高比表面積α相氮化矽粉體。柴田耕司等人發明專利「氮化矽粉末之製造方法及氮化矽粉末、以及氮化矽燒結 體及使用其之電路基板」(專利號:I573757),將矽二醯亞胺(silicon diimide)、矽四醯胺(silicon tetramide)、矽氯亞胺(silicon chloroimide)等含氮矽烷化合物加熱分解得到非晶質之Si-N-H系化合物,置入連續式燒結爐使其呈現流動狀態下,於氮氣環境下以1400~1700℃之溫度進行燒結製程,可得到內部氧少且具有適合於燒結之表面氧之氮化矽粉末。Crosbie之發明專利「Method of making a special purity silicon nitride powder」(專利號:US 4582696),將四乙氧基矽烷(Tetraethyl orthosilicate)和氨氣作燃燒反應產生非晶質的矽粉和碳黑後,於1300~1500℃之氮氣氣氛下進行碳熱還原氮化反應,可得到高純度α相氮化矽粉體。Schroll之發明專利「Method for producing high-purity silicon nitride」(專利號:US 8697023B2),將高純度矽粉置入旋轉式管狀高溫爐中,藉由調控氮氣、氬氣及氫氣等三種氣體的混合比例,在1100~1450℃下進行燒結製程完成氮化反應,可得到高純度氮化矽粉體。 Zhong Xianlong et al., "Method for manufacturing high specific surface area α phase tantalum nitride powder" (Patent No.: I347299), first using NH 4 NO 3 as an oxidant and using glycine (aminoacetic acid) and urea (urea) as The fuel is subjected to a solution combustion synthesis method to prepare a reaction precursor powder (SiO 2 + C). Since the ratio of carbon to cerium oxide is low in the reaction precursor, extra sucrose is added as a carbon source, and finally the obtained The precursor is subjected to a hot carbon reduction nitridation reaction in a tubular high-temperature furnace in a nitrogen atmosphere to obtain a high specific surface area α phase tantalum nitride powder. Chai Tian Gengsi et al., "Method for producing tantalum nitride powder and tantalum nitride powder, and tantalum nitride sintered body and circuit board using the same" (Patent No. I573757), silicon diimide And a nitrogen-containing decane compound such as silicon tetramide or silicon chloroimide is thermally decomposed to obtain an amorphous Si-NH compound, which is placed in a continuous sintering furnace to be in a flowing state. The sintering process is carried out at a temperature of 1400 to 1700 ° C in a nitrogen atmosphere to obtain a tantalum nitride powder having less internal oxygen and having surface oxygen suitable for sintering. Crosbie's invention patent "Method of making a special purity silicon nitride powder" (Patent No.: US 4582696), after the combustion of Tetraethyl orthosilicate and ammonia gas to produce amorphous tantalum powder and carbon black The carbothermal reduction nitridation reaction is carried out in a nitrogen atmosphere at 1300 to 1500 ° C to obtain a high-purity α phase tantalum nitride powder. Schroll's invention patent "Method for producing high-purity silicon nitride" (Patent No.: US 8697023B2), which places high-purity tantalum powder into a rotary tubular high-temperature furnace by regulating the mixing of three gases, such as nitrogen, argon and hydrogen. In the ratio, the sintering process is completed at 1100 to 1450 ° C to complete the nitriding reaction, and a high-purity tantalum nitride powder can be obtained.

因此,目前常見合成氮化矽粉體的方法大多採用直接氮化法及碳熱還原法。但直接氮化法耗時且耗能,碳熱還原法主要是將二氧化矽粉體與碳黑作混合,在1500℃氮氣氣氛下進行碳熱還原氮化反應,但是二氧化矽粉體與碳黑很難做到均質混合,會造成粉體碳熱還原氮化反應不完全而有殘碳過多的問題,會增加後續除碳製程的時間使氮化矽含氧量提高,而降低了氮化矽粉體的純度影響後續塊材成型的品質 與可靠度。且傳統製備方法之氮化矽粉體呈不規則形,其粒徑具一分佈範圍,流動性較差,在後續模造成型與燒結反應時粒子間鏈結容易造成孔洞缺陷,影響塊材緻密性與真密度。 Therefore, at present, most of the methods for synthesizing tantalum nitride powder are direct nitridation and carbothermal reduction. However, the direct nitridation method is time consuming and energy consuming. The carbothermal reduction method mainly mixes the cerium oxide powder with carbon black, and performs the carbothermal reduction nitridation reaction under a nitrogen atmosphere at 1500 ° C, but the cerium oxide powder and It is difficult to achieve homogeneous mixing of carbon black, which will cause the problem of incomplete carbon reduction and nitriding of the powder and excessive carbon residue, which will increase the time of the subsequent carbon removal process, increase the oxygen content of the tantalum nitride, and reduce the nitrogen. The purity of the bismuth powder affects the quality of the subsequent block forming With reliability. Moreover, the tantalum nitride powder of the conventional preparation method has an irregular shape, the particle diameter has a distribution range, and the fluidity is poor, and the inter-particle chain is likely to cause void defects in the subsequent mold-forming type and sintering reaction, which affects the compactness of the block and True density.

因此目前業界需要一種製備球形氮化矽粉體的方法,可使二氧化矽粉體與碳源均質混合,在碳熱還原氮化反應不會有殘碳過多的問題,配合簡易、省時的除碳製程,以製備出符合業界需求、粒徑均一的球形氮化矽粉末。 Therefore, there is a need in the industry for a method for preparing a spherical tantalum nitride powder, which can uniformly mix the cerium oxide powder with a carbon source, and has no problem of excessive carbon residue in the carbothermal reduction nitriding reaction, and is simple and time-saving. In addition to the carbon process, a spherical tantalum nitride powder having a uniform particle size in accordance with industry requirements is prepared.

鑒於上述習知技術之缺點,本發明主要目的在於提供一種製備球形氮化矽粉體的方法,製備過程包含原料混合、噴霧乾燥、碳化、碳熱還原、氮化及除碳等,可製備出具有良好特性的球形氮化矽粉體。 In view of the above disadvantages of the prior art, the main object of the present invention is to provide a method for preparing a spherical tantalum nitride powder, which can be prepared by mixing raw materials, spray drying, carbonization, carbothermal reduction, nitriding and carbon removal. A spherical tantalum nitride powder having good characteristics.

為了達到上述目的,根據本發明所提出之一方案,提供一種製備球形氮化矽粉體的方法,步驟包括:(A)提供一二氧化矽粉體與一碳源,將該二氧化矽粉體與該碳源分散溶解於一溶劑中,形成一混合漿料;(B)將該混合漿料進行噴霧造粒,形成一球形粉體;(C)將該球形粉體於氮氣氣氛下進行碳化處理,形成一碳化球形粉體;(D)將該碳化之球形粉體於氮氣氣氛下進行碳熱還原氮化反應,形成一球形氮化矽粉體;(E)將該球形氮化矽粉體於大氣下進行除碳,形成一高純度球形氮化矽粉體。 In order to achieve the above object, according to one aspect of the present invention, a method for preparing a spherical tantalum nitride powder is provided, the steps comprising: (A) providing a cerium oxide powder and a carbon source, the cerium oxide powder And the carbon source is dispersed and dissolved in a solvent to form a mixed slurry; (B) the mixed slurry is spray granulated to form a spherical powder; (C) the spherical powder is subjected to a nitrogen atmosphere Carbonization treatment to form a carbonized spherical powder; (D) subjecting the carbonized spherical powder to a carbothermal reduction nitridation reaction under a nitrogen atmosphere to form a spherical tantalum nitride powder; (E) the spherical tantalum nitride The powder is decarburized in the atmosphere to form a high-purity spherical tantalum nitride powder.

上述步驟(A)之碳源係選自葡萄糖、蔗糖或酚醛 樹脂其中之一;該二氧化矽粉體與該碳源之重量比例係為1:1.0-2.5,其中,該二氧化矽粉體與葡萄糖之重量比例可為1:2.5,該二氧化矽粉體與蔗糖之重量比例可為1:2.0,該二氧化矽粉體與酚醛樹脂之重量比例可為1:1.0;所述之溶劑係選自水或乙醇其中之一;該二氧化矽粉體於該混合漿料之固含量係為10至20wt%之間,用以調整該混合漿料黏度約為50cP(centipoise);所述之混合方法可為球磨,該球磨方式可採用行星式球磨機。本發明以容易取得之碳材作為燒結反應之碳源,可使用行星式球磨機進行高能量均質混合碳源、溶劑與奈米級二氧化矽粉體,搭配不同粒徑的球磨珠反覆進行高能量球磨製程,調配出最適之黏度的噴霧造粒漿料。 The carbon source of the above step (A) is selected from the group consisting of glucose, sucrose or phenolic One of the resins; the weight ratio of the cerium oxide powder to the carbon source is 1:1.0-2.5, wherein the weight ratio of the cerium oxide powder to glucose may be 1:2.5, the cerium oxide powder The weight ratio of the body to the sucrose may be 1:2.0, the weight ratio of the cerium oxide powder to the phenolic resin may be 1:1.0; the solvent is selected from one of water or ethanol; the cerium oxide powder The solid content of the mixed slurry is between 10 and 20% by weight to adjust the viscosity of the mixed slurry to be about 50 cP (centipoise); the mixing method may be ball milling, and the ball milling method may be a planetary ball mill. In the invention, the easily obtained carbon material is used as the carbon source of the sintering reaction, and the planetary ball mill can be used for the high energy homogeneous mixed carbon source, the solvent and the nanometer cerium oxide powder, and the ball beads of different particle sizes are repeatedly used for high energy. The ball milling process is formulated to produce a spray granulation slurry of optimum viscosity.

上述步驟(B)進行噴霧造粒製程可完成微米化碳源均勻包覆二氧化矽粉體製作,最佳之二氧化矽粉體與該碳源之重量比例係為1:1.0-2.5,可做出碳源均勻包覆之球形二氧化矽粉體,粒徑大小約40~50μm。 The above step (B) is carried out by a spray granulation process to complete the uniform coating of the cerium oxide powder by the micronized carbon source, and the optimum weight ratio of the cerium oxide powder to the carbon source is 1:1.0-2.5. A spherical cerium oxide powder uniformly coated with a carbon source is prepared, and the particle size is about 40 to 50 μm.

上述步驟(C)之碳化處理溫度係為700℃-800℃;步驟(D)之碳熱還原氮化反應溫度係為1400℃-1500℃,較佳為1450℃。 The carbonization treatment temperature in the above step (C) is from 700 ° C to 800 ° C; and the carbothermal reduction nitridation reaction temperature in the step (D) is from 1400 ° C to 1500 ° C, preferably from 1450 ° C.

上述步驟(E)可將該球形氮化矽粉體置入旋轉高溫爐中,於大氣下進行均質除碳製程;除碳溫度係為700℃-800℃。 In the above step (E), the spherical tantalum nitride powder may be placed in a rotating high temperature furnace to perform a homogeneous carbon removal process under the atmosphere; the carbon removal temperature is 700 ° C to 800 ° C.

本發明採用噴霧造粒製程將起始物二氧化矽與 碳源之混合漿料,在設定溫度範圍60℃-200℃以高速旋轉(10000rpm以上)方式霧化,產生乾燥之球形固體粉體,此法不僅乾燥製程快速,亦可直接控制球形粉體粒徑大小為40~50μm。另可藉由改變高溫燒結製程之升溫曲線參數,可一次完成碳化、碳熱還原與氮化反應,製備出高純度之球形氮化矽粉體。 The invention adopts a spray granulation process to convert the starting material cerium oxide with The mixed slurry of carbon source is atomized at a high temperature (60 rpm or more) in a set temperature range of 60 ° C to 200 ° C to produce a dry spherical solid powder. This method not only has a fast drying process, but also directly controls spherical powder particles. The diameter is 40~50μm. In addition, the carbonization, carbothermal reduction and nitridation reactions can be completed at one time by changing the temperature rise curve parameters of the high-temperature sintering process to prepare a high-purity spherical tantalum nitride powder.

本發明是一種製備球形氮化矽粉體的方法,此方法的特色在於將易取得之碳源與二氧化矽粉體透過噴霧乾燥進行球形化造粒製程,得到微米級球形均勻混合粉體,預先將碳源均勻包覆二氧化矽粉體在碳熱還原反應時可有效提升在氮氣氣氛燒結下之氮化轉化率,達到減少碳源使用量之目的,且球形結構的氮化矽粉體粒徑均一,具有較佳的粉體流動性,可提升模造成型後的塊材緻密性與真密度,並減少經燒結反應時粒子間鏈結所造成的孔洞缺陷,後續可研製出抗震耐高壓之氮化矽基板。 The invention is a method for preparing a spherical tantalum nitride powder. The method is characterized in that the easily obtained carbon source and the ceria powder are spray-dried to carry out a spheroidizing granulation process to obtain a micron-sized spherical uniformly mixed powder. The carbon dioxide source is uniformly coated with the cerium oxide powder in the carbothermal reduction reaction, and the nitriding conversion rate under the nitrogen atmosphere sintering can be effectively improved to achieve the purpose of reducing the amount of the carbon source used, and the spherical structure of the cerium nitride powder The particle size is uniform, and the powder has good fluidity, which can improve the compactness and true density of the block after the mold is formed, and reduce the hole defects caused by the inter-particle chain during the sintering reaction, and subsequently develop the earthquake-resistant high pressure. The tantalum nitride substrate.

以上之概述與接下來的詳細說明及附圖,皆是為了能進一步說明本發明達到預定目的所採取的方式、手段及功效。而有關本發明的其他目的及優點,將在後續的說明及圖式中加以闡述。 The above summary, the following detailed description and the accompanying drawings are intended to further illustrate the manner, the Other objects and advantages of the present invention will be described in the following description and drawings.

S101-S105‧‧‧步驟 S101-S105‧‧‧Steps

第一圖係為本發明之一種製備球形氮化矽粉體的方法流程圖; 第二圖係為本發明實施例經噴霧造粒後之球形粉體掃描式電子顯微鏡圖譜;第三圖係為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體掃描式電子顯微鏡圖譜;第四圖係為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體X光粉末繞射圖譜。 The first figure is a flow chart of a method for preparing a spherical tantalum nitride powder according to the present invention; The second figure is a spherical powder scanning electron microscope spectrum after spray granulation according to an embodiment of the present invention; the third figure is a spherical tantalum nitride powder scanning electron after the carbothermal reduction nitridation reaction according to the embodiment of the present invention. Microscopic map; the fourth figure is a diffraction pattern of spherical tantalum nitride powder X-ray powder after the carbothermal reduction nitridation reaction of the embodiment of the present invention.

以下係藉由特定的具體實例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之優點及功效。 The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the advantages and effects of the present invention from the disclosure herein.

本發明之一種製備球形氮化矽粉體的方法,可利用高能量球磨製程配合噴霧造粒之方式,將碳源均勻包覆於二氧化矽粉體表面,經一次碳化後均勻混合,於1400℃-1500℃之氮氣氣氛下進行燒結製程,完成碳熱還原氮化反應,形成球形氮化矽粉體,燒結後之粉體可置於含氧環境下之旋轉高溫爐進行均質除碳製程,完成高純度球形氮化矽粉體製備。其中碳熱還原氮化反應,是以包覆於二氧化矽粉體表面碳化後的碳源成份作為還原劑,在氮氣氣氛下將二氧化矽還原,被還原出的矽與氮氣反應生成氮化矽粉體。 The method for preparing the spherical tantalum nitride powder of the invention can be uniformly coated on the surface of the cerium oxide powder by a high-energy ball milling process and spray granulation, and uniformly mixed after one carbonization, at 1400. The sintering process is carried out under a nitrogen atmosphere of °C-1500 °C to complete the carbothermal reduction nitridation reaction to form a spherical tantalum nitride powder. The sintered powder can be placed in a rotating high temperature furnace under an oxygen atmosphere for a homogeneous carbon removal process. The preparation of high-purity spherical tantalum nitride powder is completed. The carbothermal reduction nitridation reaction is a carbon source component which is carbonized on the surface of the cerium oxide powder as a reducing agent, and the cerium oxide is reduced under a nitrogen atmosphere, and the reduced cerium reacts with nitrogen to form nitriding.矽 powder.

請參閱第一圖,其係為本發明之一種製備球形氮化矽粉體的方法流程圖。如圖所示,本發明之一種製備球形氮化矽粉體的方法,步驟包括:(A)提供一二氧化矽粉體與一碳 源,將該二氧化矽粉體與該碳源分散溶解於一溶劑中,形成一混合漿料S101;(B)將該混合漿料進行噴霧造粒,形成一球形粉體S102;(C)將該球形粉體於氮氣氣氛下進行碳化處理,形成一碳化球形粉體S103;(D)將該碳化之球形粉體於氮氣氣氛下進行碳熱還原氮化反應,形成一球形氮化矽粉體S104;(E)將該球形氮化矽粉體於大氣下進行除碳,形成一高純度球形氮化矽粉體S105。 Please refer to the first figure, which is a flow chart of a method for preparing a spherical tantalum nitride powder according to the present invention. As shown in the figure, a method for preparing a spherical tantalum nitride powder according to the present invention comprises the steps of: (A) providing a cerium oxide powder and a carbon a source, the cerium oxide powder and the carbon source are dispersed and dissolved in a solvent to form a mixed slurry S101; (B) the mixed slurry is spray granulated to form a spherical powder S102; (C) The spherical powder is carbonized in a nitrogen atmosphere to form a carbonized spherical powder S103; (D) the carbonized spherical powder is subjected to a carbothermal reduction nitridation reaction under a nitrogen atmosphere to form a spherical tantalum nitride powder. The body S104; (E) the spherical tantalum nitride powder is decarburized under the atmosphere to form a high-purity spherical tantalum nitride powder S105.

其中,所述之碳源係選自葡萄糖、蔗糖或酚醛樹脂其中之一;所述之溶劑係選自水或乙醇其中之一;該二氧化矽粉體與該碳源之重量比例係為1:1.0-2.5;該二氧化矽粉體於該混合漿料之固含量係為10至20wt%之間;所述之混合方法可為球磨。 Wherein, the carbon source is one selected from the group consisting of glucose, sucrose or phenolic resin; the solvent is selected from one of water or ethanol; and the weight ratio of the cerium oxide powder to the carbon source is 1 : 1.0-2.5; the solid content of the cerium oxide powder in the mixed slurry is between 10 and 20% by weight; the mixing method may be ball milling.

實施例一:將75克的葡萄糖溶於1500mL去離子水中,再加入30克的二氧化矽粉體,搭配不同粒徑的球磨珠反覆進行高能量球磨製程,形成一均勻混合之噴霧造粒漿料,將混合漿料在霧化器轉速控制在15000rpm、循環風扇頻率控制40Hz、入口溫度設定160℃、出口溫度設定100℃、進料速度控制20ml/min下進行噴霧乾燥製程,形成微米化碳源均勻包覆二氧化矽之球形粉體。請參閱第二圖,為本發明實施例經噴霧造粒製程後之球形粉體掃描式電子顯微鏡圖譜,如圖所示,噴霧乾燥後之粉體呈現圓球形狀,量測該粉體的平均粒徑為45.36μm。將得到的球形粉體置於BN坩堝(氮化硼坩堝) 中進行燒結製程,先於800℃下、氮氣氣氛之高溫爐內進行碳化處理,碳化時間為2小時,形成碳化球形粉體。再將碳化後的球形粉體繼續以升溫速率為5℃/min升溫至1450℃,並持溫5小時,於氮氣氣氛下在高溫爐中進行碳熱還原氮化反應,形成球形氮化矽粉體。請參閱第三圖,為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體掃描式電子顯微鏡圖譜,如圖所示,碳熱還原氮化反應後之粉體呈現圓球形狀並具有孔洞結構。最後利用旋轉高溫爐於800℃下將燒結後的氮化矽粉體進行10小時之均質除碳製程,完成高純度球形氮化矽粉體製備。請參閱第四圖,為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體X光粉體繞射圖譜,採用的二氧化矽與葡萄糖重量比為1:2.5,如圖所示,製備而得的粉體呈現氮化矽α晶相,證實已製備出球形氮化矽粉體。 Example 1: 75 g of glucose was dissolved in 1500 mL of deionized water, and then 30 g of cerium oxide powder was added, and the ball milling beads of different particle diameters were repeatedly subjected to a high-energy ball milling process to form a uniformly mixed spray granulation slurry. The mixed slurry was spray-dried at a nebulizer rotation speed of 15000 rpm, a circulating fan frequency control of 40 Hz, an inlet temperature setting of 160 ° C, an outlet temperature setting of 100 ° C, and a feed rate control of 20 ml/min to form a micronized carbon. The source uniformly coats the spherical powder of cerium oxide. Please refer to the second figure, which is a scanning electron micrograph of a spherical powder after a spray granulation process according to an embodiment of the present invention. As shown in the figure, the powder after spray drying exhibits a spherical shape, and the average of the powder is measured. The particle size was 45.36 μm. The obtained spherical powder is placed in BN坩埚 (boron nitride) The sintering process is carried out, and the carbonization treatment is carried out in a high-temperature furnace at 800 ° C in a nitrogen atmosphere, and the carbonization time is 2 hours to form a carbonized spherical powder. The carbonized spherical powder is further heated to a temperature of 5 ° C / min to 1450 ° C, and held for 5 hours, and subjected to a carbothermal reduction nitridation reaction in a high temperature furnace under a nitrogen atmosphere to form a spherical tantalum nitride powder. body. Please refer to the third figure, which is a scanning electron microscope image of the spherical tantalum nitride powder after the carbothermal reduction nitridation reaction according to the embodiment of the present invention. As shown in the figure, the powder after the carbothermal reduction nitridation reaction has a spherical shape. And has a hole structure. Finally, a high-purity spherical tantalum nitride powder was prepared by rotating the sintered tantalum nitride powder at 800 ° C for 10 hours in a homogenizing carbon removal process. Please refer to the fourth figure, which is a diffraction pattern of the spherical tantalum nitride powder X-ray powder after the carbothermal reduction nitridation reaction according to the embodiment of the present invention, and the weight ratio of cerium oxide to glucose is 1:2.5. It is shown that the prepared powder exhibits a tantalum nitride α crystal phase, and it has been confirmed that a spherical tantalum nitride powder has been prepared.

實施例二:先將60克的蔗糖溶於1500mL去離子水中,再加入30克的二氧化矽粉體,搭配不同粒徑的球磨珠反覆進行高能量球磨製程,形成一均勻混合之噴霧造粒漿料,將混合漿料在霧化器轉速控制在15000rpm、循環風扇頻率控制40Hz、入口溫度設定180℃、出口溫度設定100℃、進料速度控制20ml/min進行噴霧乾燥製程,形成微米化碳源均勻包覆二氧化矽之球形粉體,量測該粉體的平均粒徑為43.27μm。將得到的球形粉體置於BN坩堝(氮化硼坩堝)中進行燒結製程,先於800℃下、氮氣氣氛之高溫爐內進行碳化處理,碳化時間 為2小時,形成碳化球形粉體。再將碳化後的球形粉體繼續以升溫速率為5℃/min升溫至1450℃,並持溫5小時,於氮氣氣氛下在高溫爐中進行碳熱還原氮化反應,形成球形氮化矽粉體。最後利用旋轉高溫爐於800℃下將燒結後的氮化矽粉體進行10小時之均質除碳製程,完成高純度球形氮化矽粉體製備。請參閱第四圖,為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體X光粉體繞射圖譜,採用的二氧化矽與蔗糖重量比為1:2.0,如圖所示,製備而得的粉體呈現氮化矽α晶相,證實已製備出球形氮化矽粉體。 Example 2: 60 g of sucrose is first dissolved in 1500 mL of deionized water, and then 30 g of cerium oxide powder is added, and ball milling beads of different particle sizes are repeatedly used for high-energy ball milling to form a uniform mixed spray granulation. Slurry, the mixed slurry is controlled at a rotation speed of 15000 rpm, a cycle fan frequency control of 40 Hz, an inlet temperature setting of 180 ° C, an outlet temperature setting of 100 ° C, and a feed rate control of 20 ml/min for a spray drying process to form a micronized carbon. The spherical powder of the cerium oxide was uniformly coated with the source, and the average particle diameter of the powder was measured to be 43.27 μm. The obtained spherical powder is placed in BN坩埚 (boron nitride) for sintering process, and carbonization is carried out in a high-temperature furnace at 800 ° C in a nitrogen atmosphere, and the carbonization time is performed. For 2 hours, a carbonized spherical powder was formed. The carbonized spherical powder is further heated to a temperature of 5 ° C / min to 1450 ° C, and held for 5 hours, and subjected to a carbothermal reduction nitridation reaction in a high temperature furnace under a nitrogen atmosphere to form a spherical tantalum nitride powder. body. Finally, a high-purity spherical tantalum nitride powder was prepared by rotating the sintered tantalum nitride powder at 800 ° C for 10 hours in a homogenizing carbon removal process. Please refer to the fourth figure, which is a diffraction pattern of the spherical tantalum nitride powder X-ray powder after the carbothermal reduction nitridation reaction according to the embodiment of the present invention, and the weight ratio of cerium oxide to sucrose is 1:2.0, as shown in the figure. It is shown that the prepared powder exhibits a tantalum nitride α crystal phase, and it has been confirmed that a spherical tantalum nitride powder has been prepared.

實施例三:將30克的酚醛樹脂溶於1000mL乙醇中,再加入30克的二氧化矽粉體,搭配不同粒徑的球磨珠反覆進行高能量球磨製程,形成一均勻混合之噴霧造粒漿料,將混合漿料在霧化器轉速控制在15000rpm、循環風扇頻率控制40Hz、入口溫度設定100℃、出口溫度設定80℃、進料速度控制20ml/min進行噴霧乾燥製程,形成微米化碳源均勻包覆二氧化矽之球形粉體,量測該粉體的平均粒徑為46.21μm。將得到的球形粉體置於BN坩堝(氮化硼坩堝)中進行燒結製程,先於800℃下、氮氣氣氛之高溫爐內進行碳化處理,碳化時間為2小時,形成碳化球形粉體。再將碳化後的球形粉體繼續以升溫速率為5℃/min升溫至1450℃,並持溫5小時,於氮氣氣氛下在高溫爐中進行碳熱還原氮化反應,形成球形氮化矽粉體。最後利用旋轉高溫爐於800℃下將燒結後的氮化矽粉體 進行10小時之均質除碳製程,完成高純度球形氮化矽粉體製備。請參閱第四圖,為本發明實施例碳熱還原氮化反應後之球形氮化矽粉體X光粉體繞射圖譜,採用的二氧化矽與酚醛樹脂重量比為1:1.0,如圖所示,製備而得的粉體呈現氮化矽α晶相,證實已製備出球形氮化矽粉體。 Example 3: 30 g of phenolic resin was dissolved in 1000 mL of ethanol, and 30 g of cerium oxide powder was added, and the ball milling beads of different particle sizes were repeatedly used for high-energy ball milling to form a uniform mixed spray granulation slurry. The slurry was spray-dried at a nebulizer speed of 15,000 rpm, a circulating fan frequency of 40 Hz, an inlet temperature of 100 ° C, an outlet temperature of 80 ° C, and a feed rate of 20 ml/min to form a micronized carbon source. The spherical powder of the cerium oxide was uniformly coated, and the average particle diameter of the powder was measured to be 46.21 μm. The obtained spherical powder was placed in a BN bismuth (boron nitride) for sintering process, and carbonized at a high temperature furnace at 800 ° C in a nitrogen atmosphere for a carbonization time of 2 hours to form a carbonized spherical powder. The carbonized spherical powder is further heated to a temperature of 5 ° C / min to 1450 ° C, and held for 5 hours, and subjected to a carbothermal reduction nitridation reaction in a high temperature furnace under a nitrogen atmosphere to form a spherical tantalum nitride powder. body. Finally, the sintered tantalum nitride powder is sintered at 800 ° C using a rotating high temperature furnace. The high-purity spherical tantalum nitride powder was prepared by performing a 10-hour homogeneous carbon removal process. Please refer to the fourth figure, which is a diffraction pattern of the spherical tantalum nitride powder X-ray powder after the carbothermal reduction nitridation reaction according to the embodiment of the present invention, and the weight ratio of the cerium oxide to the phenolic resin is 1:1.0, as shown in the figure. As shown, the prepared powder exhibited a tantalum nitride α crystal phase, and it was confirmed that a spherical tantalum nitride powder had been prepared.

本發明採用噴霧造粒結合碳熱還原氮化法製備出球形氮化矽粉體,與傳統的碳熱還原氮化法相比,本發明使用葡萄糖/蔗糖/酚醛樹脂取代碳黑做為碳源並可當接著劑使用,利用噴霧造粒製程製備出球形粉體,並藉由改變高溫燒結的溫度曲線一次完成碳化、碳熱還原及氮化反應,在1400℃-1500℃的溫度範圍內即可合成氮化矽粉體。具球形結構的氮化矽粉體有較佳的粉體流動性,可提升模造成型後的塊材緻密性與真密度,並減少經燒結反應時粒子間鏈結所造成的孔洞缺陷,後續研製出較高可靠度之氮化矽基板。因此,本發明具流程簡單、不需使用額外添加接著劑、生產成本低、減少含碳源的使用量等優點,具備經濟及節能效益,可導入國內半導體、功率元件、車用電子等應用領域,有效提升元件於高溫、震動、粉塵等嚴苛環境下之使用壽命與可靠度,使其在未來的應用領域更加寬廣。 The present invention uses a spray granulation combined with a carbothermal reduction nitridation method to prepare a spherical tantalum nitride powder. Compared with the conventional carbothermal reduction nitridation method, the present invention uses glucose/sucrose/phenolic resin instead of carbon black as a carbon source. The spherical powder can be prepared by the spray granulation process as an adhesive, and the carbonization, carbothermal reduction and nitridation reaction can be completed once by changing the temperature profile of the high-temperature sintering, and the temperature can be in the range of 1400 ° C - 1500 ° C. Synthesis of tantalum nitride powder. The tantalum nitride powder with spherical structure has better powder fluidity, can improve the compactness and true density of the block after the mold is formed, and reduce the hole defects caused by the inter-particle chain during the sintering reaction. A highly reliable tantalum nitride substrate. Therefore, the invention has the advantages of simple process, no need to use additional adhesive, low production cost, reduced use of carbon source, etc., and has economic and energy-saving benefits, and can be introduced into domestic semiconductor, power components, automotive electronics and other application fields. It can effectively improve the service life and reliability of components in harsh environments such as high temperature, vibration and dust, making it more widely used in future applications.

上述之實施例僅為例示性說明本發明之特點及功效,非用以限制本發明之實質技術內容的範圍。任何熟悉此技藝之人士均可在不違背發明之精神及範疇下,對上述實施 例進行修飾與變化。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the features and effects of the present invention and are not intended to limit the scope of the technical scope of the present invention. Anyone familiar with the art can implement the above without violating the spirit and scope of the invention. Examples are modifications and changes. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.

Claims (13)

一種製備球形氮化矽粉體的方法,步驟包括:(A)提供一二氧化矽粉體與一碳源,將該二氧化矽粉體與該碳源分散溶解於一溶劑中,形成一混合漿料;(B)將該混合漿料進行噴霧造粒,形成一球形粉體;(C)將該球形粉體於氮氣氣氛下進行碳化處理,形成一碳化球形粉體;(D)將該碳化之球形粉體於氮氣氣氛下進行碳熱還原氮化反應,形成一球形氮化矽粉體;(E)將該球形氮化矽粉體於大氣下進行除碳,形成一高純度球形氮化矽粉體。 A method for preparing a spherical tantalum nitride powder, the method comprising: (A) providing a cerium oxide powder and a carbon source, dispersing and dissolving the cerium oxide powder and the carbon source in a solvent to form a mixture (B) spray-granulating the mixed slurry to form a spherical powder; (C) carbonizing the spherical powder under a nitrogen atmosphere to form a carbonized spherical powder; (D) The carbonized spherical powder is subjected to a carbothermal reduction nitridation reaction under a nitrogen atmosphere to form a spherical tantalum nitride powder; (E) the spherical tantalum nitride powder is decarbonized in the atmosphere to form a high-purity spherical nitrogen. Pupation powder. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之碳源係選自葡萄糖、蔗糖或酚醛樹脂其中之一。 A method for preparing a spherical tantalum nitride powder according to claim 1, wherein the carbon source of the step (A) is one selected from the group consisting of glucose, sucrose or phenolic resin. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之二氧化矽粉體與碳源之重量比例係為1:1.0-2.5。 A method for preparing a spherical tantalum nitride powder according to the first aspect of the invention, wherein the weight ratio of the cerium oxide powder to the carbon source in the step (A) is 1:1.0-2.5. 如申請專利範圍第2項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之二氧化矽粉體與葡萄糖之重量比例係為1:2.5。 A method for preparing a spherical tantalum nitride powder according to the second aspect of the invention, wherein the weight ratio of the cerium oxide powder to glucose in the step (A) is 1:2.5. 如申請專利範圍第2項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之二氧化矽粉體與蔗糖之重量比例係為1:2.0。 A method for preparing a spherical tantalum nitride powder according to the second aspect of the invention, wherein the weight ratio of the cerium oxide powder to sucrose in the step (A) is 1:2.0. 如申請專利範圍第2項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之二氧化矽粉體與酚醛樹脂之重量比例係為1:1.0。 A method for preparing a spherical tantalum nitride powder according to the second aspect of the invention, wherein the weight ratio of the cerium oxide powder to the phenol resin in the step (A) is 1:1.0. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之溶劑係選自水或乙醇其中之一。 A method for preparing a spherical tantalum nitride powder according to claim 1, wherein the solvent of the step (A) is one selected from the group consisting of water or ethanol. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之二氧化矽粉體於該混合漿料之固含量係為10至20wt%之間。 A method for preparing a spherical tantalum nitride powder according to claim 1, wherein the cerium oxide powder of the step (A) has a solid content of from 10 to 20% by weight based on the mixed slurry. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(A)之混合方法係為球磨。 A method for preparing a spherical tantalum nitride powder according to the first aspect of the invention, wherein the mixing method of the step (A) is ball milling. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(C)之碳化處理溫度係為700℃-800℃。 A method for preparing a spherical tantalum nitride powder according to claim 1, wherein the carbonization temperature of the step (C) is from 700 ° C to 800 ° C. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(D)之碳熱還原氮化反應溫度係為1400℃-1500℃。 A method for preparing a spherical tantalum nitride powder according to the first aspect of the invention, wherein the carbothermal reduction nitridation reaction temperature of the step (D) is from 1400 ° C to 1500 ° C. 如申請專利範圍第1項所述之一種製備球形氮化矽粉體的方法,其中該步驟(E)係將該球形氮化矽粉體置入旋轉高溫爐中,於大氣下進行均質除碳製程。 The method for preparing a spherical tantalum nitride powder according to the first aspect of the invention, wherein the step (E) is: placing the spherical tantalum nitride powder into a rotating high temperature furnace to perform homogeneous carbon removal in the atmosphere. Process. 如申請專利範圍第1項或第12項所述之一種製備球形氮化矽粉體的方法,其中該步驟(E)之除碳溫度係為700℃-800℃。 A method for preparing a spherical tantalum nitride powder according to the first or the twelfth aspect of the invention, wherein the carbon removal temperature of the step (E) is from 700 ° C to 800 ° C.
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