CN1673070A - Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder - Google Patents

Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder Download PDF

Info

Publication number
CN1673070A
CN1673070A CNA2004100298093A CN200410029809A CN1673070A CN 1673070 A CN1673070 A CN 1673070A CN A2004100298093 A CNA2004100298093 A CN A2004100298093A CN 200410029809 A CN200410029809 A CN 200410029809A CN 1673070 A CN1673070 A CN 1673070A
Authority
CN
China
Prior art keywords
silicon nitride
mixture
powder
nitrogen
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100298093A
Other languages
Chinese (zh)
Other versions
CN1307089C (en
Inventor
林志明
贾楠
杨筠
方侃
宋广智
封凌萍
李江涛
景满德
祁太元
王生渊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinghai Electric Power Research Technology Co ltd
Technical Institute of Physics and Chemistry of CAS
Original Assignee
Qinghai Electric Power Research Technology Co ltd
Technical Institute of Physics and Chemistry of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinghai Electric Power Research Technology Co ltd, Technical Institute of Physics and Chemistry of CAS filed Critical Qinghai Electric Power Research Technology Co ltd
Priority to CNB2004100298093A priority Critical patent/CN1307089C/en
Publication of CN1673070A publication Critical patent/CN1673070A/en
Application granted granted Critical
Publication of CN1307089C publication Critical patent/CN1307089C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)

Abstract

The present invention belongs to the field of inorganic non-metal material, and is one kind temperature-controlling activated self-spreading combustion process of synthesizing alpha-SiN powder. Silicon powder in 40-94 weight portions, SiN diluent in 6-60 weight portions and catalyst in 0.5-30 weight portions are first mixed and grinding activated, and then filled into reactor, where the reactant system is induced to produce self-spreading combustion reaction in 3-9 Mpa nitrogen atmosphere to obtain alpha-SiN powder. The method of the present invention has the advantages of no need of material pre-treatment, simple process, short production period, simple reaction initiation, low power consumption, low cost, high alpha phase content in the product, etc.

Description

The method of the synthetic α phase silicon nitride powder of temperature control activation self-propagating combustion
Technical field
The invention belongs to field of inorganic nonmetallic material, relate to the method for the synthetic α phase silicon nitride powder of a kind of temperature control activation self-propagating combustion.
Background technology
Silicon nitride ceramics is owing to have unique physical and mechanical property, for example hardness height, intensity height, wear-resistant, good thermostability (particularly thermal expansivity is low), good chemical stability, low-friction coefficient, low density and high thermal conductivity etc., so silicon nitride ceramic material and device are widely used in numerous areas such as engine building, chemical industry and semi-conductor industry.But high raw materials cost has restricted the extensive application of silicon nitride ceramics component in every field, and therefore, international material circle is devoted to develop the method that new low price prepares beta-silicon nitride powder always.
Yet from phase composite, there is very big difference in beta-silicon nitride powder.It is the β phase-Si of high-temperature stable that principal phase is arranged 3N 4Powder, it is the α phase-Si of cryostatic stabilization that principal phase is also arranged 3N 4Powder.On sintering character, the α phase-Si of cryostatic stabilization 3N 4The sintering character of powder will be far superior to β phase-Si 3N 4Powder, and the general transformation that α → β phase takes place in the sintering process, this phase transformation are separated out mechanism by dissolving and are carried out, and follow phase transformation that densification takes place simultaneously.Therefore how to prepare high α phase-Si 3N 4The research focus that powder is always.
Known method by the direct synthesizing silicon nitride powder of nitrogenizing reaction can be divided into following several, and first kind is the body of heater synthetic method of industrial widespread use; Second kind is SiO 2Carbothermic method, the third is relative newer plasma chemical synthesis method; The 4th kind is the self-propagating high-temperature synthesis method (SHS) in the synthetic field of burning.
The method of body of heater synthesizing silicon nitride is: in nitrogen atmosphere, the heating Si powder makes it nitrogenizing reaction takes place and gets in electric furnace.Silicon-dioxide pyrocarbon hot reducing method also belongs to a kind of among this preparation method.Technically as can be known, this method is the most effective and simple relatively a kind of method of synthesis of high content α phase silicon nitride, and this method mainly is the nitridation process of silica flour in the flowing nitrogen atmosphere.But the method for body of heater synthesizing silicon nitride needs twice nitrogenize, and to be silica flour promptly carry out nitrogenize in 100~250 ℃ the temperature range being lower than self fusing point to the first step, and this step needs 10~20 hours; The second step nitrogenize is to finish between 1200~1400 ℃, takes 4~5 hours, and the whole production cycle is longer.And the method for this body of heater synthesizing silicon nitride, needing strictly control reaction temperature, nitrogen partial pressure and second gas flow that goes on foot in the nitridation process, these conditions all are in order to guarantee to generate the mutually needed thermal environment of α.In addition, this method high temperature long time treatment needs bigger energy consumption.
The plasma chemical synthetic method is siliceous (as SiH 4, SiCl 4) and nitrogen (NH 3, N 2) raw material in radio-frequency generator, carry out plasma bodyization and react preparing beta-silicon nitride powder.Mostly Zhi Bei silicon nitride is amorphous phase in this way, and contains higher oxygen.In addition, with the beta-silicon nitride powder of plasma method preparation, compare with the beta-silicon nitride powder for preparing with additive method, have higher chemically reactive, therefore hydrolysis easily in malaria, need take certain safeguard procedures in preparation and the process that stores.Although the beta-silicon nitride powder of plasma method preparation has the advantage of easy-sintering, the quality of this powder can not satisfy the requirement of the stupalith of high physics of preparation and mechanical property.Also have, plasma chemical is synthetic synthetic the same with body of heater, also needs bigger power consumption.
Say that technically the self-propagating high-temperature synthesis method is the most promising a kind of method.This method is to utilize the exothermic effect of reaction, and its key is the bringing out of the local reaction of mixture reaction layer, and burning synthetic in continuity interaction between each component.That is to say, self-propagating combustion early stage mainly be because the sufficient exothermic effect of reaction system, and the reaction mixture layer that causes with layer between from heat release.The huge heat effect (180Kcal/mol) of silicon and nitrogen reaction can make silicon nitride in burning synthetic mode, that is to say, can carry out self-propagating high-temperature and synthesize.
Disclosed at present combustion synthesis method prepares beta-silicon nitride powder, also has some limitation.As " a kind of method for preparing alpha-phase silicon nitride " (the patent US5032370) of inventions such as Merzhanov, the nitrogen pressure that needs is too high, and (4~30MPa), to the equipment requirements harshness, the production safety coefficient is low, is unfavorable for scale operation.Equally, " preparation method of self propagating high temperature synthesizing silicon nitride iron powder " of people such as Jiang Guojian invention (CN1275526) also exists reaction pressure too high, shortcoming to the equipment requirements harshness, and owing to adopt the lower ferro-silicon alloy powder of purity as raw material, iron contamination content height in the product, basically be the lower beta phase silicon nitride of commercial value, can not satisfy the needs of fine structure pottery.And the Chen Ke of Tsing-Hua University newly waits people's invention " method of the synthetic alpha-phase silicon nitride powder of a kind of low-pressure combustion " (CN1362358A), what adopt is the suspension nitrogenize technology of silicon, several steps finish below main the branch, 1. the feed metal silica flour is carried out pickling or ultrasonic pretreatment, to improve the activity of original silica flour; 2. add promoting agent, thinner and additive; 3. with mixed raw materials powder ball milling 15~30 hours on rotary mill; 4. mixed raw material is put into the low-pressure combustion synthetic reaction device 50~70 ℃ of oven dry, after vacuumizing, is blown into the nitrogen that pressure is 0.1~1MPa from the powder bottom, brings out the raw material powder burning simultaneously, realizes the suspension nitrogenize of silicon under the low pressure.Though this synthetic technology can reduce employed nitrogen pressure significantly, reduce requirement, on the entire reaction flow process to the equipment high voltage performance, operation is various, length consuming time, and the production cycle is long, bring out reactive mode complicated and introduce impurity easily, energy consumption is big, and production cost is improved.
Summary of the invention
The objective of the invention is to, overcome in the prior art that operation is various, the production cycle long, bring out the reactive mode complexity, energy consumption is big and shortcoming such as cost height, provide a kind of at suitable pressures, the method for the synthetic α phase silicon nitride powder of temperature control activation self-propagating combustion easy and simple to handle, with short production cycle.
The method of the synthetic α phase silicon nitride of temperature control activation self-propagating combustion provided by the invention may further comprise the steps:
(1) batching:
In weight part, with silica flour: 40~94 parts, the silicon nitride thinner: 6~60 parts, catalyzer: 0.5~30 part is mixed, and obtains a mixture;
Wherein said catalyzer is an ammonium halide salt;
(2) activation treatment:
The mixture that step (1) is obtained grinds activation treatment;
(3) combustion reactions:
Mixture after step (2) ground is with 1.0~2.4g/cm 3Loose density pack in the reactor, after vacuumizing, charge into the gas of nitrogen, nitrogen and ammonia or nitrogen and argon gas, make pressure-controlling at 3~9MPa, bring out mixture then and carry out combustion synthesis reaction;
During the described mixed gas that charges into nitrogen and ammonia or nitrogen and argon gas, wherein the dividing potential drop of ammonia or argon gas is 0.1~0.5MPa;
(4) reaction is finished:
When the pressure in the reactor was reduced to 2~7MPa, combustion synthesis reaction was finished, be cooled to room temperature after, the releasing reactor internal pressure obtains loose block product, after fine grinding, obtains α phase silicon nitride powder.
The present invention is in order to realize the combustion synthesizing high alpha phase silicon nitride better, by design reactant system composition and change nitrogen pressure, expand the combustiblecomponents scope of raw material, and reduced maximum combustion temperature, made it to adjust to the optimal temperature interval (<1600 ℃) that is fit to the formation of α phase silicon nitride; Improve the activity of reactant simultaneously, to guarantee that combustion wave is enough to be spread under lower temperature of combustion.We are with this control maximum combustion temperature the time, and the technology that improves reactant activity again is referred to as the temperature control activating technology.
Because the thermal discharge of silica flour and nitrogen reaction is too high, therefore, in step (1), the method for being diluted by adding beta-silicon nitride powder in the raw material silica flour reduces combustion reaction temperature; The method of also available gas-phase reaction dilution agent is (as to N 2Sneak into gases such as Ar in the gas).Simultaneously, in order under low temperature, to make combustion reactions, in the raw material silica flour, add catalyzer and carry out activation treatment, to play the purpose that improves reactant activity from keeping.Used catalyzer serves a dual purpose in building-up process.The first, it can be used as the thinner of raw material silica flour, just is used to reduce temperature of combustion, for synthetic α phase silicon nitride provides optimal temperature.The second, it was gasified at the burning initial stage, and formed Si (NH with silicon 2) 2Intermediate product, intermediate product will promote the α phase silicon nitride to generate in combustion processes.For this purpose, the mixture of single ammonium halide salt or two kinds of ammonium halide salts all can be used as catalyzer.
In the present invention, employed Si powder, particle size range is 0.1~110 μ m; The silicon nitride thinner is a silicon nitride powder, and particle size range is 0.05~78 μ m, and preferred α phase content is greater than 85wt%; Employed catalyzer is an ammonium halide salt, preferred NH 4Cl, NH 4F or its mixture, wherein NH in the mixture 4Cl and NH 4The weight ratio of F is 0.1~10.
In the blending process of step of the present invention (1), preferred earlier with silica flour and Si 3N 4Carry out drying treatment after thinner is mixed in proportion, for example put into baking oven and dry processing, and then add catalyzer.
The activation treatment of the mixture that obtains for step (1) can adopt mechanical activation to handle, and comprises that high-energy planetary formula ball milling, the horizontal rotor of high energy grind, the high energy vibrations are ground or stirring ball-milling etc., 1~10 hour ball milling time.Grinding also is ball milling, and itself not only can be levigate but also can have played activation, and when being milled down to a certain degree, what can take place that crystallite brings out is decrystallized, and promptly the Si powder changes little non-crystalline state by crystalline state, is to be not less than 5wt% with amorphous content to be advisable to the requirement of activation degree.Then, the mix powder pine after grinding is loaded in the resistant to elevated temperatures container (for example porous graphite crucible), loose density is 1.0~2.4g/cm 3, put into reactor more together.The reactor that is used for the present invention is the high pressure vessel of the band watercooling jacket made with stainless steel.
In the present invention, adopt W taenidium or carbon paper to make heating element, generally feed the electric current of 10~30A, bring out powder systems generation combustion synthesis reaction in the local heating mode.For example use φ 0.5mm tungsten filament coiled coil, pass to pulsed current 5~10s of 10~30A, make coil heating, heated the raw mix layer of contact with it thus, make the raw mix layer reach the temperature that silicon and nitrogen react, then, chemical reaction just in layer advances burning in the mode that spreads in raw mix, in this system, the rate of spread of combustion wave is 0.01~20mm/s (rate of spread of combustion wave is relevant with the raw mix component with nitride dielectric layer).
Pressure in reactor is reduced to 2~7MPa, also is 80% o'clock of original pressure, and combustion synthesis reaction is finished, and entire reaction course continues 10~30 minutes; After combustion synthesis reaction is finished, be cooled to room temperature, the releasing reactor internal pressure can obtain loose block product then, after the fine grinding, obtains the α phase silicon nitride powder of content 85~97Wt%.
The present invention's advantage compared with the prior art:
1) the starting material powder is convenient can get, and the raw material silica flour need not special processings such as pickling.
2) the activation treatment time is only 1~10 hour ball milling time, preferred 1~5 hour; And combustion synthesis reaction is rapid, and the reaction times is 10~30 minutes, has shortened the whole production cycle.
3) rely on the exothermic effect of raw material self to finish the self-propagating high-temperature reaction, after reaction is brought out, need not external energy, and the required electric energy of the chemical reaction that ignites can be ignored.Therefore, save energy reduces cost.
4) the present invention has overcome routine from spreading in the process, because temperature of reaction is too high, speed of response is too fast, reaction is difficult to control, cause reaction to be carried out not exclusively, transformation efficiency is low, and the α phase content is low in the sintetics, and the shortcoming that is difficult to pulverize, by adding thinner and catalyzer, and adjust the two add-on, control reaction temperature effectively, make the purity height, the beta-silicon nitride powder of α phase content height, even particle size distribution.
5) introduce the equal activation treatment means of amorphous owing to the introducing of thinner and catalyzer and by grinding, controlled reaction process effectively, make the synthetic required nitrogen pressure that burns reduce (reaction pressure 3~9MPa).And then low requirement to equipment, improved the production safety coefficient.
Embodiment
Embodiment 1
The Si powder of median size 0.1 μ m, the Si of median size 0.5 μ m 3N 4Powder (about α phase content 90wt%) and NH 4F took a sample than 50: 28: 22 by weight, and they are put into the ball grinder ball milling 9 hours of vibromill, made its thorough mixing and activation; Material behind the admixture activation is placed the porous graphite crucible, make loose density be about 1.0~2.4g/cm 3, place a helically wound tungsten filament on the material upper strata, the tungsten filament diameter is 0.5mm, puts into the combustion synthesis reaction device more together; After vacuumizing, charge into high pure nitrogen, reach 8MPa up to nitrogen pressure from reactor bottom; Helical tungsten filament is passed to pulsed current, make its heating, bring out the material powder burning, combustion reactions continues to be cooled to room temperature, again with high pressure N after 15 minutes 2Emit, the fine grinding product promptly obtains combustion reaction products.Reaction product is carried out the quantitative analysis of thing phase with Japan's D/MAX-IIB type X-ray diffraction analyser of science, and its result is the beta-silicon nitride powder of 91wt% for α phase silicon nitride content, and wherein the content of remaining Si is 5wt%.
Embodiment 2
The Si powder of median size 5 μ m, the Si of median size 20nm 3N 4Powder (about α phase content 90wt%), NH 4F and NH 4Cl, by weight than 45: 36: 8: 11 the sampling, will claim earlier Si powder and Si 3N 4Put into baking oven after the mixing, under 100 ℃ of conditions dry 1.5 hours, take out the back add claim NH 4F and NH 4Cl puts into the ball grinder ball milling 5 hours of planetary ball mill together, makes its thorough mixing and activation, and amorphous content is not less than 5wt%; Mixed material is placed in the porous graphite crucible, make loose density be about 1.0~2.4g/cm 3, place a helical tungsten filament on the material upper strata, put into the combustion synthesis reaction device more together; After vacuumizing, charge into ammonia earlier to 0.1MPa, charge into high pure nitrogen again, reach 7.5MPa up to reactor pressure from the bottom; Helical tungsten filament is passed to the pulsed current of 12A, make its heating, bring out the material powder burning, combustion reactions continues to be cooled to room temperature after 30 minutes, emptying gas, the fine grinding product promptly obtains reaction product, and reaction product is carried out quantitative material phase analysis with Japan's D/MAX-IIB type X-ray diffraction analyser of science, its result is the beta-silicon nitride powder of 93wt% for α phase silicon nitride content, and the X-ray diffraction analysis does not have free Si.
Embodiment 3
The Si powder of median size 0.5 μ m, the Si of median size 78 μ m 3N 4Powder (about α phase content 90wt%) and NH 4Cl by weight than sampling in 89: 6: 5, puts into the ball grinder of planetary ball mill, and ball milling 4.5 hours makes its thorough mixing and activation, and amorphous content is not less than 5wt%; Material behind the admixture activation is placed the porous graphite crucible, make loose density be about 1.0~2.4g/cm 3, place a helically wound tungsten filament on the material upper strata, the tungsten filament diameter is 0.5mm, puts into the combustion synthesis reaction device more together; After vacuumizing, charge into ammonia earlier, charge into high pure nitrogen again, reach 3MPa up to reactor pressure to 0.5MPa; Helical tungsten filament is passed to the pulsed current of 12A, make its heating, bring out the material powder burning, combustion reactions continues to be cooled to room temperature after 28 minutes, emptying gas, the fine grinding product, get final product reaction product, reaction product is carried out XRD analysis with Japan's D/MAX-IIB type X-ray diffraction analyser of science, its result is the beta-silicon nitride powder of 92wt% for α phase silicon nitride content, and the X-ray diffraction analysis does not have free Si.

Claims (10)

1. a temperature control activates the method that self-propagating combustion synthesizes the α phase silicon nitride powder, it is characterized in that step is as follows:
(1) batching:
In weight part, with silica flour: 40~94 parts, the silicon nitride thinner: 6~60 parts, catalyzer: 0.5~30 part is mixed, and obtains a mixture;
Wherein said catalyzer is an ammonium halide salt;
(2) activation treatment:
The mixture that step (1) is obtained grinds activation treatment;
(3) combustion reactions:
Mixture after step (2) ground is with 1.0~2.4g/cm 3Loose density pack in the reactor, after vacuumizing, charge into the mixed gas of nitrogen, nitrogen and ammonia or nitrogen and argon gas, make pressure-controlling at 3~9MPa, bring out mixture then and carry out combustion synthesis reaction;
During the described mixed gas that charges into nitrogen and ammonia or nitrogen and argon gas, wherein the dividing potential drop of ammonia or argon gas is 0.1~0.5MPa;
(4) reaction is finished:
When the pressure in the reactor was reduced to 2~7MPa, combustion synthesis reaction was finished, be cooled to room temperature after, the releasing reactor internal pressure, resultant loose block product after fine grinding, obtains α phase silicon nitride powder.
2. method according to claim 1 is characterized in that, in the blending process of described step (1), earlier with silica flour and Si 3N 4Carry out drying treatment after thinner is mixed in proportion, add catalyzer again.
3. method according to claim 1 and 2 is characterized in that, described silica flour particle size range is 0.1~110 μ m.
4. method according to claim 1 and 2 is characterized in that, described silicon nitride thinner is a silicon nitride powder, and particle size range is 0.05~78 μ m, and wherein the α phase content is greater than 85wt%.
5. method according to claim 1 is characterized in that, described ammonium halide salt is NH 4Cl, NH 4F or its mixture, wherein NH in the mixture 4Cl and NH 4The weight ratio of F is 0.1~10.
6. method according to claim 1 is characterized in that, described grinding activation comprises that high-energy planetary formula ball milling, the horizontal rotor of high energy grind, the high energy vibrations are ground or stirring ball-milling.
7. method according to claim 1 is characterized in that, described mixture after step (2) is ground is packed in the reactor, is that the mixture pine after step (2) is ground is loaded in the porous graphite crucible, puts into reactor more together.
8. method according to claim 1 is characterized in that, described activation degree is that amorphous content is not less than 5wt%.
9. method according to claim 1 is characterized in that, the described mixture that brings out carries out combustion synthesis reaction and is, makes heating element by tungsten helix or carbon paper, feeds the electric current of 10~30A, brings out in the local heating mode and realizes.
10. method according to claim 1 is characterized in that, the described combustion synthesis reaction time is 10~30 minutes.
CNB2004100298093A 2004-03-25 2004-03-25 Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder Expired - Fee Related CN1307089C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100298093A CN1307089C (en) 2004-03-25 2004-03-25 Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100298093A CN1307089C (en) 2004-03-25 2004-03-25 Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder

Publications (2)

Publication Number Publication Date
CN1673070A true CN1673070A (en) 2005-09-28
CN1307089C CN1307089C (en) 2007-03-28

Family

ID=35045890

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100298093A Expired - Fee Related CN1307089C (en) 2004-03-25 2004-03-25 Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder

Country Status (1)

Country Link
CN (1) CN1307089C (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101269802B (en) * 2007-03-21 2010-08-11 中国科学院理化技术研究所 Method for synthesizing Si3N4 powder body and Si3N4/SiC composite powder body
CN101857441A (en) * 2010-06-25 2010-10-13 清华大学 Method for preparing beta-silicon nitride powder
CN101269979B (en) * 2007-03-23 2011-01-12 中国科学院理化技术研究所 Method for synthesizing ultra-fine aluminum nitride powder with combustion
CN101983947A (en) * 2010-11-24 2011-03-09 云南大学 Novel method for synthesizing silicon nitride powder with high alpha phases by catalysis and nitridation
CN105483823A (en) * 2015-12-04 2016-04-13 烟台同立高科新材料股份有限公司 Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof
CN106430127A (en) * 2016-11-16 2017-02-22 中国科学院理化技术研究所 Preparation method of high-alpha-phase silicon nitride powder
CN106673670A (en) * 2016-12-30 2017-05-17 烟台同立高科新材料股份有限公司 Preparation method of high-purity silicon nitride powder
CN106747640A (en) * 2017-01-13 2017-05-31 武汉科技大学 A kind of beta-silicon nitride nanowire enhancing porous silicon carbide silicon materials and preparation method thereof
JP2017114727A (en) * 2015-12-24 2017-06-29 エルジー・ケム・リミテッド METHOD FOR PRODUCING α SILICON NITRIDE
CN109734456A (en) * 2019-03-11 2019-05-10 中国科学院理化技术研究所 A kind of preparation method of porous silicon nitride ceramic
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder
CN114409414A (en) * 2020-10-28 2022-04-29 中国科学院理化技术研究所 Method for preparing high-purity silicon nitride powder by taking high-oxygen-content silicon powder as raw material
CN114516752A (en) * 2021-12-23 2022-05-20 内蒙古工业大学 Porous calcium silicate ceramic and ultra-fast preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1173880C (en) * 2002-01-22 2004-11-03 清华大学 Low pressure combustion process of synthesizing alpha-phase silicon nitride powder

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101269802B (en) * 2007-03-21 2010-08-11 中国科学院理化技术研究所 Method for synthesizing Si3N4 powder body and Si3N4/SiC composite powder body
CN101269979B (en) * 2007-03-23 2011-01-12 中国科学院理化技术研究所 Method for synthesizing ultra-fine aluminum nitride powder with combustion
CN101857441A (en) * 2010-06-25 2010-10-13 清华大学 Method for preparing beta-silicon nitride powder
CN101857441B (en) * 2010-06-25 2012-11-14 清华大学 Method for preparing beta-silicon nitride powder
CN101983947A (en) * 2010-11-24 2011-03-09 云南大学 Novel method for synthesizing silicon nitride powder with high alpha phases by catalysis and nitridation
CN105483823A (en) * 2015-12-04 2016-04-13 烟台同立高科新材料股份有限公司 Silicon nitride powder for solar polysilicon ingot casting and preparation method thereof
JP2017114727A (en) * 2015-12-24 2017-06-29 エルジー・ケム・リミテッド METHOD FOR PRODUCING α SILICON NITRIDE
JP7240800B2 (en) 2015-12-24 2023-03-16 エルジー・ケム・リミテッド Method for producing α-silicon nitride
CN106430127B (en) * 2016-11-16 2018-10-19 中国科学院理化技术研究所 A kind of preparation method of high alpha phase silicon nitride powders
CN106430127A (en) * 2016-11-16 2017-02-22 中国科学院理化技术研究所 Preparation method of high-alpha-phase silicon nitride powder
CN106673670A (en) * 2016-12-30 2017-05-17 烟台同立高科新材料股份有限公司 Preparation method of high-purity silicon nitride powder
CN106747640A (en) * 2017-01-13 2017-05-31 武汉科技大学 A kind of beta-silicon nitride nanowire enhancing porous silicon carbide silicon materials and preparation method thereof
CN106747640B (en) * 2017-01-13 2019-10-25 武汉科技大学 A kind of beta-silicon nitride nanowire enhancing porous silicon carbide silicon materials and preparation method thereof
JPWO2019167879A1 (en) * 2018-02-28 2021-02-12 株式会社トクヤマ Method for manufacturing silicon nitride powder
EP3760581A4 (en) * 2018-02-28 2021-12-01 Tokuyama Corporation Method for manufacturing silicon nitride powder
JP7358331B2 (en) 2018-02-28 2023-10-10 株式会社トクヤマ Method for manufacturing silicon nitride powder
CN109734456A (en) * 2019-03-11 2019-05-10 中国科学院理化技术研究所 A kind of preparation method of porous silicon nitride ceramic
CN114409414A (en) * 2020-10-28 2022-04-29 中国科学院理化技术研究所 Method for preparing high-purity silicon nitride powder by taking high-oxygen-content silicon powder as raw material
CN114409414B (en) * 2020-10-28 2023-04-18 中国科学院理化技术研究所 Method for preparing high-purity silicon nitride powder by taking high-oxygen-content silicon powder as raw material
CN114516752A (en) * 2021-12-23 2022-05-20 内蒙古工业大学 Porous calcium silicate ceramic and ultra-fast preparation method thereof

Also Published As

Publication number Publication date
CN1307089C (en) 2007-03-28

Similar Documents

Publication Publication Date Title
US5110565A (en) Apparatus for producing uniform, fine ceramic powder
CN100453508C (en) Chemically excited combustion process for synthesizing Si3N4/SiC composite powder
CN101125653B (en) Method for synthesizing homogeneous nano silicon carbide powder by burning
Weimer et al. Rapid carbothermal reduction of boron oxide in a graphite transport reactor
CN1307089C (en) Temperature-controlling activated self-spreading combustion process of synthesizing alpha-phase SiN powder
CN101214934A (en) Self-combustion non-pollution fast preparation method for alpha-phase silicon nitride powder
CN101891214B (en) Preparation method for synthesizing boron carbide powder at low temperature
CN101445223A (en) Method for preparing low-oxygen high-alpha phase silicon nitride powder by auto-igniting synthesis
CN1264781C (en) Temperature controlled combustion method for synthesizing powder of silicon nitride in alpha phase
JPS6112844B2 (en)
CN101863663B (en) Combustion method for preparing submicron grade titanium carbide polycrystal powder
CN102583276A (en) Method for producing regularly shaped alpha-phase silicon nitride powder
US5194234A (en) Method for producing uniform, fine boron-containing ceramic powders
CN108529576A (en) Silicon nitride and preparation method thereof
CN107285288A (en) The preparation method of nano silicon nitride powders
CN103387214A (en) Microwave preparation method of high-quality aluminum nitride powder
CN101774809A (en) Method for preparing silicon nitride and silicon carbide compounded powder through self-propagating combustion
US5032370A (en) Method of preparing silicon nitride with a high alpha-phase content
Liu et al. Thermodynamic and kinetic analyses of vacuum synthesis of AlN by the alumina carbothermal reduction nitridation method
Wang et al. Combustion synthesis of α-Si3N4 powders using in-situ nano-SiO2 coated Si and Si3N4 reactants
CN100415641C (en) Method for synthesizing isotropic silicon nitride powder adopting layer type material-distribution
TWI646045B (en) A method for producing the spherical silicon nitride powder
CN101229916B (en) Method for combustion synthesis of silicon nitride powder by using polytetrafluoroethylene as additive
CN115072677A (en) High-quality silicon nitride powder synthesis method
CN102060544A (en) Quick crystallization method for realizing amorphous silicon nitride powder by taking silica powder as additive

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee