TW201920484A - Polyimide precursor composition, polyimide film prepared using same, transparent polyimide substrate for oxide TFT, and transparent polyimide substrate for LTPS - Google Patents
Polyimide precursor composition, polyimide film prepared using same, transparent polyimide substrate for oxide TFT, and transparent polyimide substrate for LTPS Download PDFInfo
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- TW201920484A TW201920484A TW107129854A TW107129854A TW201920484A TW 201920484 A TW201920484 A TW 201920484A TW 107129854 A TW107129854 A TW 107129854A TW 107129854 A TW107129854 A TW 107129854A TW 201920484 A TW201920484 A TW 201920484A
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- chemical formula
- precursor composition
- polyimide
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 83
- 239000004642 Polyimide Substances 0.000 title claims abstract description 62
- 239000002243 precursor Substances 0.000 title claims abstract description 53
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 49
- 150000004985 diamines Chemical class 0.000 claims abstract description 35
- 239000002904 solvent Substances 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims description 104
- 229920002098 polyfluorene Polymers 0.000 claims description 43
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 40
- 125000004432 carbon atom Chemical group C* 0.000 claims description 37
- 150000003949 imides Chemical class 0.000 claims description 29
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 26
- -1 dimethylsiloxane-diphenylsiloxane Chemical class 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 19
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005192 partition Methods 0.000 claims description 15
- 125000003118 aryl group Chemical group 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 230000009477 glass transition Effects 0.000 claims description 11
- 238000006116 polymerization reaction Methods 0.000 claims description 11
- 125000001424 substituent group Chemical group 0.000 claims description 11
- 125000005843 halogen group Chemical group 0.000 claims description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 125000000962 organic group Chemical group 0.000 claims description 9
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 8
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 7
- 125000004438 haloalkoxy group Chemical group 0.000 claims description 7
- 125000001188 haloalkyl group Chemical group 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 7
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- WQPDQJCBHQPNCZ-UHFFFAOYSA-N cyclohexa-2,4-dien-1-one Chemical compound O=C1CC=CC=C1 WQPDQJCBHQPNCZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 150000003254 radicals Chemical class 0.000 claims description 3
- YGQRXLWPKFITJL-UHFFFAOYSA-N C1(=CC=CC=C1)[SiH2]C1=CC=CC=C1.C[SiH2]C Chemical compound C1(=CC=CC=C1)[SiH2]C1=CC=CC=C1.C[SiH2]C YGQRXLWPKFITJL-UHFFFAOYSA-N 0.000 claims 1
- 150000001721 carbon Chemical group 0.000 claims 1
- 125000006159 dianhydride group Chemical group 0.000 claims 1
- PQZTVWVYCLIIJY-UHFFFAOYSA-N diethyl(propyl)amine Chemical compound CCCN(CC)CC PQZTVWVYCLIIJY-UHFFFAOYSA-N 0.000 claims 1
- ZUHZZVMEUAUWHY-UHFFFAOYSA-N n,n-dimethylpropan-1-amine Chemical group CCCN(C)C ZUHZZVMEUAUWHY-UHFFFAOYSA-N 0.000 claims 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 239000012788 optical film Substances 0.000 abstract description 4
- 239000002313 adhesive film Substances 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 description 43
- 230000008569 process Effects 0.000 description 25
- 239000000243 solution Substances 0.000 description 24
- 239000003960 organic solvent Substances 0.000 description 14
- NVKGJHAQGWCWDI-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-3-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F NVKGJHAQGWCWDI-UHFFFAOYSA-N 0.000 description 13
- 150000002466 imines Chemical class 0.000 description 13
- 229920001577 copolymer Polymers 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000005191 phase separation Methods 0.000 description 9
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 150000001412 amines Chemical class 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- XCEFXFSJAOBEGJ-UHFFFAOYSA-N 2-ethyl-2-methylbutanamide Chemical compound CCC(C)(CC)C(N)=O XCEFXFSJAOBEGJ-UHFFFAOYSA-N 0.000 description 4
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- XIPFMBOWZXULIA-UHFFFAOYSA-N pivalamide Chemical compound CC(C)(C)C(N)=O XIPFMBOWZXULIA-UHFFFAOYSA-N 0.000 description 4
- 239000002798 polar solvent Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000001409 amidines Chemical class 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 230000000379 polymerizing effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- JYYNAJVZFGKDEQ-UHFFFAOYSA-N 2,4-Dimethylpyridine Chemical compound CC1=CC=NC(C)=C1 JYYNAJVZFGKDEQ-UHFFFAOYSA-N 0.000 description 2
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2,5-dimethylpyridine Chemical compound CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 2
- NURQLCJSMXZBPC-UHFFFAOYSA-N 3,4-dimethylpyridine Chemical compound CC1=CC=NC=C1C NURQLCJSMXZBPC-UHFFFAOYSA-N 0.000 description 2
- HWWYDZCSSYKIAD-UHFFFAOYSA-N 3,5-dimethylpyridine Chemical compound CC1=CN=CC(C)=C1 HWWYDZCSSYKIAD-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000012024 dehydrating agents Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- YSWBFLWKAIRHEI-UHFFFAOYSA-N 4,5-dimethyl-1h-imidazole Chemical compound CC=1N=CNC=1C YSWBFLWKAIRHEI-UHFFFAOYSA-N 0.000 description 1
- JAWZAONCXMJLFT-UHFFFAOYSA-N 4-propylpyridine Chemical compound CCCC1=CC=NC=C1 JAWZAONCXMJLFT-UHFFFAOYSA-N 0.000 description 1
- RWXZXCZBMQPOBF-UHFFFAOYSA-N 5-methyl-1H-benzimidazole Chemical compound CC1=CC=C2N=CNC2=C1 RWXZXCZBMQPOBF-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 238000002479 acid--base titration Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000001925 cycloalkenes Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 125000004474 heteroalkylene group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000006358 imidation reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012770 industrial material Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- ZNPKAOCQMDJBIK-UHFFFAOYSA-N nitrocyanamide Chemical compound [O-][N+](=O)NC#N ZNPKAOCQMDJBIK-UHFFFAOYSA-N 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005004 perfluoroethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1057—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
- C08G73/106—Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
- C08G73/1028—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
- C08G73/1032—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous characterised by the solvent(s) used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
本申請案主張以2017年9月14日申請的韓國專利申請案10-2017-0117989號為基礎的優先權的利益,本說明書將上述韓國專利申請案的文獻中所揭示的所有內容包括作一部分。This application claims the benefit of priority based on Korean Patent Application No. 10-2017-0117989, filed on September 14, 2017. This specification includes all of the contents disclosed in the documents of the aforementioned Korean patent application as a part .
本發明提供一種用以製備可緩和熱膨脹-收縮行為的低相位差、高耐熱的聚醯亞胺膜的聚醯亞胺前驅物組成物。The invention provides a polyimide precursor composition for preparing a low-phase-difference, high-heat-resistant polyimide film that can ease thermal expansion-contraction behavior.
聚醯亞胺(polyimide,PI)作為結晶度相對較低、或大部分具有非晶質結構的聚合物,其是一種不僅具有合成容易,可製作成薄膜且無需使用用於硬化的交聯基等優點,而且具有透明性、因堅固的鏈結構所實現的卓越耐熱性與耐化學性、優異的機械物性、電特性及尺寸穩定性的聚合物材料,目前廣泛地用作汽車、航空航天領域、軟性電路基板、液晶顯示裝置(Liquid Crystal Display,LCD)用液晶配向膜、接著劑及塗覆劑等電性、電子材料。Polyimide (PI), as a polymer with relatively low crystallinity or mostly having an amorphous structure, is not only easy to synthesize, but can be made into a thin film without using a crosslinking group for hardening. Polymer materials with advantages such as transparency, excellent heat resistance and chemical resistance due to strong chain structure, excellent mechanical properties, electrical properties, and dimensional stability, are currently widely used in the automotive and aerospace fields , Flexible circuit substrates, liquid crystal alignment films for liquid crystal display (LCD) liquid crystal alignment films, adhesives and coating materials, and other electrical and electronic materials.
然而,即便聚醯亞胺為具有較高的熱穩定性、機械物性、耐化學性及電特性的高性能聚合物材料,亦未能滿足顯示器領域所需的基本必要條件,即無色透明的性質,且存在需進一步降低熱膨脹係數的課題。例如,由杜邦公司售賣的Kapton的熱膨脹係數為約30 ppm/℃左右,其雖表現出較低的熱膨脹係數值,但仍無法滿足塑膠基板的要求條件。因此,目前較多的研究都朝向保持聚醯亞胺的基本特性且最小化其光學特性及熱特性的改變方面進行。However, even if polyimide is a high-performance polymer material with high thermal stability, mechanical properties, chemical resistance, and electrical properties, it still fails to meet the basic necessary conditions required in the display field, that is, colorless and transparent properties. And, there is a problem that the coefficient of thermal expansion needs to be further reduced. For example, the thermal expansion coefficient of Kapton sold by DuPont is about 30 ppm / ° C. Although it shows a low thermal expansion coefficient value, it still cannot meet the requirements of plastic substrates. Therefore, more current researches are focused on maintaining the basic properties of polyimide and minimizing changes in its optical and thermal properties.
通常,以芳香族聚醯亞胺為例,其呈深褐色的固有顏色,能夠以存在於醯亞胺主鏈中的苯的π電子因鏈間的鍵結發生電荷轉移複合化(charge transfer complex,又稱為CT-complex),而發生上述電荷轉移複合化的原因在於醯亞胺(imide)結構中存在σ電子、π電子、非鍵結(nonbonding)非共價電子對,故發生電子激發。Generally, taking aromatic polyfluorene imine as an example, it has a dark brown inherent color, and can carry out charge transfer complex by the π electrons of benzene existing in the fluorene imine main chain due to the inter-chain bonding. (Also known as CT-complex), and the reason for the above-mentioned charge transfer recombination is that there are σ electrons, π electrons, and nonbonding non-covalent electron pairs in the imide structure, so electron excitation occurs. .
典型的聚醯亞胺在500 nm之間的可見光區域吸收來自400 nm以下的波長的光,因此呈現與上述光對應的顏色(即黃色(yellow)至紅色(red))。因此,為了減少芳香族聚醯亞胺的缺點(即電荷轉移複合化),有藉由在上述醯亞胺主鏈中導入如三氟甲基(-CF3 )、碸(-SO2 )、醚(-O-)等的陰電性相對較強的元素以限制π電子移動來降低共振效應的方法,再者,可藉由導入苯以外的烯烴系環狀(環烯烴(cycloolefin))結構而減小存在於主鏈中的π電子的密度來製造無色透明的聚醯亞胺膜。A typical polyimide absorbs light from a wavelength below 400 nm in the visible light region between 500 nm, and thus exhibits a color corresponding to the above light (ie, yellow to red). Therefore, in order to reduce the shortcomings of aromatic polyfluorene imines (that is, charge transfer complexes), it is possible to introduce trifluoromethyl (-CF 3 ), fluorene (-SO 2 ), A method in which relatively negative anion elements such as ether (-O-) are used to limit the movement of π electrons to reduce the resonance effect. Furthermore, an olefinic cyclic (cycloolefin) structure other than benzene can be introduced. The density of the π electrons existing in the main chain is reduced to produce a colorless and transparent polyfluorene film.
另一方面,聚醯胺醯亞胺具有優異的耐熱性、機械強度、電特性等特性,故長久以來廣泛地用作電性、電子、機械、航空領域等的工業用材料。此外,聚醯胺醯亞胺本身的結構與典型的聚醯亞胺不同,已知其可溶於有機溶劑,因此亦用作瓷漆(enamel varnish)、電絕緣用塗覆劑、塗料等必需溶液成形的用途。On the other hand, polyamidamine and imine have excellent properties such as heat resistance, mechanical strength, and electrical characteristics. Therefore, they have been widely used as industrial materials in the electrical, electronic, mechanical, and aerospace fields for a long time. In addition, the structure of polyimide is different from that of typical polyimide. It is known to be soluble in organic solvents, so it is also used as an essential solution for enamel varnish, coating agents for electrical insulation, and coatings. Forming uses.
然而,為了使用於顯示器領域,仍需開發一種具有更低的熱膨脹係數,且具有較高的溶解度、透明度及熱穩定性的可撓性顯示器用聚合物。However, in order to be used in the display field, it is still necessary to develop a polymer for a flexible display that has a lower thermal expansion coefficient and higher solubility, transparency, and thermal stability.
發明欲解決的課題Problems to be Solved by the Invention
本發明欲解決的課題在於提供一種用以製備可緩和熱膨脹-收縮行為的低相位差、高耐熱的透明聚醯亞胺膜的聚醯亞胺前驅物組成物。The problem to be solved by the present invention is to provide a polyimide precursor composition for preparing a low polyimide film with low phase difference and high heat resistance, which can ease thermal expansion-contraction behavior.
本發明欲解決的另一課題在於提供一種由上述聚醯亞胺前驅物組成物製備的聚醯亞胺膜。Another problem to be solved by the present invention is to provide a polyimide film prepared from the polyimide precursor composition.
本發明的又一課題在於提供一種利用上述聚醯亞胺膜的顯示器元件。Another object of the present invention is to provide a display element using the polyfluoreneimide film.
解決課題的手段Means of solving the problem
為了解決上述技術課題,本發明提供一種聚醯亞胺前驅物組成物,其含有酸二酐、二胺、下述結構式表示的二甲基矽氧烷(DMS)-二苯基矽氧烷(DPS)低聚物、及於25℃下的分配係數(LogP)為正數且密度為1 g/cm3 以下的溶劑作為聚合成分。 In order to solve the above technical problems, the present invention provides a polyfluorene imide precursor composition containing an acid dianhydride, a diamine, and dimethylsiloxane (DMS) -diphenylsiloxane represented by the following structural formula. (DPS) An oligomer and a solvent having a positive partition coefficient (LogP) at 25 ° C and a density of 1 g / cm 3 or less were used as polymerization components.
於上述結構式中,p及q為莫耳分率,於p+q=100時,p為70至90,q為10至30。In the above structural formula, p and q are mole fractions. When p + q = 100, p is 70 to 90, and q is 10 to 30.
根據較佳的實施例,上述溶劑可為醯胺類溶劑,具體而言為選自二甲基丙醯胺(dimethylpropanamide,DMPA)或二乙基丙醯胺(diethylpropanamide,DEPA)中的一者。According to a preferred embodiment, the solvent may be an amidine solvent, specifically one selected from dimethylpropanamide (DMPA) or diethylpropanamide (DEPA).
根據一實施例,上述二甲基矽氧烷(DMS)-二苯基矽氧烷(DPS)低聚物的分子量可為4,000 g/mol以上。According to an embodiment, the molecular weight of the dimethyl siloxane (DMS) -diphenyl siloxane (DPS) oligomer may be 4,000 g / mol or more.
根據一實施例,上述酸二酐可為選自包括下述化學式2a至化學式2h的四價有機基團結構的四羧酸二酐中的一者。 [化學式2a][化學式2b][化學式2c][化學式2d][化學式2e][化學式2f][化學式2g][化學式2h] According to an embodiment, the acid dianhydride may be one selected from a tetracarboxylic dianhydride having a tetravalent organic group structure including the following Chemical Formula 2a to Chemical Formula 2h. [Chemical Formula 2a] [Chemical Formula 2b] [Chemical Formula 2c] [Chemical Formula 2d] [Chemical Formula 2e] [Chemical Formula 2f] [Chemical Formula 2g] [Chemical Formula 2h]
於上述化學式2a至化學式2h中,上述R11 至R24 可分別獨立地為選自包括-F、-Cl、-Br及-I的鹵素原子、羥基(-OH)、硫醇基(-SH)、硝基(-NO2 )、氰基、碳原子數為1至10的烷基、碳原子數為1至4的鹵代烷氧基、碳原子數為1至10的鹵代烷基、碳原子數為6至20的芳基中的取代基, 上述a1可為0至2的整數,a2為0至4的整數,a3為0至8的整數,a4及a5分別獨立地為0至3的整數,a7及a8分別獨立地為0至3的整數,a10及a12分別獨立地為0至3的整數,a11為0至4的整數,a15及a16分別獨立地為0至4的整數,a17及a18分別獨立地為0至4的整數,a6、a9、a13、a14、a19、a20分別獨立地為0至3的整數, n為1至3的整數, A11 至A16 可分別獨立地為選自由-O-、-CR'R"-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者,其中上述R'及R"分別獨立地為選自由氫原子、碳原子數為1至10的烷基及碳原子數為1至10的氟烷基所組成的族群中的一者。In the above Chemical Formulas 2a to 2h, the above R 11 to R 24 may be each independently selected from a halogen atom including -F, -Cl, -Br, and -I, a hydroxyl group (-OH), and a thiol group (-SH ), Nitro (-NO 2 ), cyano, alkyl having 1 to 10 carbon atoms, haloalkoxy having 1 to 4 carbon atoms, haloalkyl having 1 to 10 carbon atoms, carbon number Is a substituent in an aryl group of 6 to 20, the above a1 may be an integer of 0 to 2, a2 is an integer of 0 to 4, a3 is an integer of 0 to 8, and a4 and a5 are each independently an integer of 0 to 3 , A7 and a8 are independently integers from 0 to 3, a10 and a12 are independently integers from 0 to 3, a11 is an integer from 0 to 4, a15 and a16 are independently integers from 0 to 4, a17 and a16 are independently a18 is independently an integer from 0 to 4, a6, a9, a13, a14, a19, a20 are each independently an integer from 0 to 3, n is an integer from 1 to 3, and A 11 to A 16 may be independently Selected from -O-, -CR'R "-, -C (= O)-, -C (= O) O-, -C (= O) NH-, -S-, -SO 2- , benzene One of the groups consisting of a radical and a combination thereof, wherein the R 'and R "are each independently selected from the group consisting of a hydrogen atom and a carbon number of 1 to 10 One of the groups consisting of an alkyl group and a fluoroalkyl group having 1 to 10 carbon atoms.
根據一實施例,於整體二胺的含量中,可包括80莫耳%至99莫耳%的下述化學式3的結構的二胺。 [化學式3] According to an embodiment, the content of the overall diamine may include a diamine having a structure of the following Chemical Formula 3 from 80 mol% to 99 mol%. [Chemical Formula 3]
於上述化學式3中, 上述R31 、R32 分別獨立地為選自包括-F、-Cl、-Br及-I的鹵素原子、羥基(-OH)、硫醇基(-SH)、硝基(-NO2 )、氰基、碳原子數為1至10的烷基、碳原子數為1至4的鹵代烷氧基、碳原子數為1至10的鹵代烷基、碳原子數為6至20的芳基中的取代基, Q可為選自由單鍵、-O-、-CR'R"-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者,此時上述R'及R"分別獨立地為選自由氫原子、碳原子數為1至10的烷基及碳原子數為1至10的氟烷基所組成的族群中的一者。In the above Chemical Formula 3, the R 31 and R 32 are each independently selected from a halogen atom including -F, -Cl, -Br, and -I, a hydroxyl group (-OH), a thiol group (-SH), and a nitro group. (-NO 2 ), cyano, alkyl having 1 to 10 carbon atoms, haloalkoxy having 1 to 4 carbon atoms, haloalkyl having 1 to 10 carbon atoms, and 6 to 20 carbon atoms A substituent in the aryl group of Q, Q may be selected from a single bond, -O-, -CR'R "-, -C (= O)-, -C (= O) O-, -C (= O) One of the groups consisting of NH-, -S-, -SO 2- , phenylene, and combinations thereof. At this time, the above R 'and R "are independently selected from the group consisting of a hydrogen atom and a carbon number of 1 to One of the groups consisting of an alkyl group having 10 carbon atoms and a fluoroalkyl group having 1 to 10 carbon atoms.
根據一實施例,於整體四羧酸二酐中,可包括20莫耳%至80莫耳%的包含下述化學式4的四羧酸二酐。 [化學式4] According to an embodiment, the total tetracarboxylic dianhydride may include 20 mol% to 80 mol% of a tetracarboxylic dianhydride including the following Chemical Formula 4. [Chemical Formula 4]
根據一實施例,於整體四羧酸二酐中,可包括20莫耳%至80莫耳%的下述化學式5的四羧酸二酐。 [化學式5] According to an embodiment, the tetracarboxylic dianhydride of the following chemical formula 5 may be included in the overall tetracarboxylic dianhydride in an amount of 20 mol% to 80 mol%. [Chemical Formula 5]
於上述化學式5中, Q1 及Q2 分別獨立地為選自由單鍵、-O-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者。In the above Chemical Formula 5, Q 1 and Q 2 are each independently selected from a single bond, -O-, -C (= O)-, -C (= O) O-, -C (= O) NH-, One of the groups consisting of -S-, -SO 2- , phenylene, and combinations thereof.
根據一實施例,可一併包括下述化學式4及化學式5的四羧酸二酐。 [化學式4][化學式5] According to an embodiment, the tetracarboxylic dianhydride of the following Chemical Formula 4 and Chemical Formula 5 may be included together. [Chemical Formula 4] [Chemical Formula 5]
於上述化學式5中, Q1 及Q2 分別獨立地為選自由單鍵、-O-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者。In the above Chemical Formula 5, Q 1 and Q 2 are each independently selected from a single bond, -O-, -C (= O)-, -C (= O) O-, -C (= O) NH-, One of the groups consisting of -S-, -SO 2- , phenylene, and combinations thereof.
為了解決本發明的另一課題,提供一種由上述聚醯亞胺的共聚物製備的聚醯亞胺膜。In order to solve another problem of the present invention, a polyimide film prepared from the copolymer of polyimide is provided.
根據一實施例,上述聚醯亞胺膜的霧度(haze)可為2以下。According to an embodiment, the haze of the polyfluoreneimide film may be 2 or less.
根據一實施例,上述聚醯亞胺膜的玻璃轉換溫度(Glass Transition Temperature,Tg)可為350℃以上。According to an embodiment, the glass transition temperature (Tg) of the polyfluoreneimide film may be 350 ° C. or higher.
根據一實施例,上述聚醯亞胺膜的熱膨脹係數(Coefficient Of Thermal Expansion,CTE)可為100 ppm/℃以下。According to an embodiment, the coefficient of thermal expansion (CTE) of the polyfluoreneimide film may be 100 ppm / ° C or lower.
再者,本發明提供一種由上述聚醯亞胺的共聚物製備的氧化物(Oxide)薄膜電晶體(Thin Film Transistor,TFT)用或低溫多晶矽(Low Temperature polycrystalline silicon,LTPS)用透明聚醯亞胺基板。Furthermore, the present invention provides a transparent polyfluorene for oxide thin film transistor (TFT) or low temperature polycrystalline silicon (LTPS) prepared from the copolymer of polyfluorene imide. Amine substrate.
發明效果Invention effect
根據本發明,於存在分配係數(LogP)為正數的有機溶劑的條件下聚合及硬化包括包含高分子量的矽氧烷結構的二胺(DMS-DPS)的聚合成分而製備的聚醯亞胺的共聚物中,DMS-DPS呈奈米尺寸的連續相分佈,從而可保持耐熱性與機械物性,並且有效率地減小殘餘應力(residual stress),因此適於高耐熱、低應力的聚合物材料。因此,可使用於如元件用基板、顯示器用覆蓋基板、光學膜、積體電路(integrated circuit,IC)封裝體、黏合膜(adhesive film)、多層可撓性印刷電路(flexible printed circuit,FPC)、膠帶、觸控面板、光碟用保護膜等的各種領域。According to the present invention, a polyfluorene imide prepared by polymerizing and curing a polymerization component including a diamine (DMS-DPS) containing a high molecular weight siloxane structure in the presence of an organic solvent having a positive partition coefficient (LogP) In the copolymer, DMS-DPS has a nano-sized continuous phase distribution, so that it can maintain heat resistance and mechanical properties, and effectively reduce residual stress, so it is suitable for polymer materials with high heat resistance and low stress. . Therefore, it can be used for, for example, a substrate for a device, a cover substrate for a display, an optical film, an integrated circuit (IC) package, an adhesive film, and a multilayer flexible printed circuit (FPC). , Tape, touch panel, protective film for optical discs, etc.
本發明可實施多種變換,可具有多種實施例,將特定實施例示於圖中,並於詳細說明中詳細地進行說明。然而,上述實施例並非意欲將本發明限定於特定的實施方式,應理解為包括包含於本發明的思想及技術範圍內的所有變換、等同物或替代物。於對本發明進行說明時,在判斷為對相關的公知技術的具體說明會混淆本發明的主旨的情形時,省略其詳細說明。The present invention can implement various transformations, and can have various embodiments. Specific embodiments are shown in the drawings and described in detail in the detailed description. However, the above-mentioned embodiments are not intended to limit the present invention to specific implementations, and should be understood to include all changes, equivalents, or alternatives included in the scope of the idea and technology of the present invention. When the present invention is described, when it is judged that the specific description of the related known technology may confuse the gist of the present invention, the detailed description thereof is omitted.
於本說明書中,只要未特別提及,則所有化合物或有機基團可為經取代或未經取代者。此處,「經取代」是指化合物或有機基團中所包括的至少一個氫由選自由鹵素原子、碳原子數為1至10的烷基、鹵化烷基、碳原子數為3至30的環烷基、碳原子數為6至30的芳基、羥基、碳原子數為1至10的烷氧基、羧酸基、醛基、環氧基、氰基、硝基、胺基、磺酸基及其衍生物所組成的族群中的取代基替代。In this specification, unless otherwise mentioned, all compounds or organic groups may be substituted or unsubstituted. Here, "substituted" means that at least one hydrogen included in a compound or an organic group is selected from the group consisting of a halogen atom, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group, and 3 to 30 carbon atoms. Cycloalkyl, aryl having 6 to 30 carbons, hydroxyl, alkoxy having 1 to 10 carbons, carboxylic acid, aldehyde, epoxy, cyano, nitro, amine, sulfo Substitutes in groups consisting of acid groups and their derivatives.
再者,於本說明書中,只要未特別提及,則「其組合」是指兩個以上的官能基藉由如單鍵、雙鍵、三鍵、碳原子數為1至10的伸烷基(例如,亞甲基(-CH2 -)、伸乙基(-CH2 CH2 -)等)、碳原子數為1至10的氟伸烷基(例如,氟亞甲基(-CF2 -)、全氟伸乙基(-CF2 CF2 -)等)、如N、O、P、S或Si的雜原子或包括其的官能基(例如,於分子內包括羰基(-C=O-)、醚基(-O-)、酯基(-COO-)、-S-、-NH-或-N=N-等的雜伸烷基)的連接基而鍵結、或兩個以上的官能基縮合或連接。Furthermore, in this specification, unless specifically mentioned, "a combination thereof" refers to two or more functional groups through, for example, a single bond, a double bond, a triple bond, and an alkylene group having 1 to 10 carbon atoms. (For example, methylene (-CH 2- ), ethylene (-CH 2 CH 2- ), etc.), fluoroalkylene having 1 to 10 carbon atoms (for example, fluoromethylene (-CF 2 -), Perfluoroethylene (-CF 2 CF 2- ), etc.), heteroatoms such as N, O, P, S or Si or functional groups including them (for example, including a carbonyl group in the molecule (-C = O-), ether group (-O-), ester group (-COO-), -S-, -NH- or -N = N- and other heteroalkylene groups), or two The above functional groups are condensed or linked.
對伴隨高溫製程的可撓性器件要求高溫下的耐熱性,特別是於使用氧化物薄膜電晶體(TFT)與低溫多晶矽(low temperature polycrystalline silicon,LTPS)製程的有機發光二極體(organic light emitting diode,OLED)器件的情形時,製程溫度為350℃以上,甚至接近500℃。Flexible devices with high-temperature processes require heat resistance at high temperatures, especially organic light emitting diodes (OLEDs) using oxide thin film transistors (TFTs) and low temperature polycrystalline silicon (LTPS) processes. In the case of diode (OLED) devices, the process temperature is above 350 ° C, or even close to 500 ° C.
於此種溫度下,即便為具有優異的耐熱性的聚醯亞胺,亦容易熱分解,會發生因熱引起的收縮或膨脹。因此,為了製備可撓性器件,需開發一種如下的聚醯亞胺:可連同優異的機械特性一併於高溫下保持較高的透明性,並且表現出優異的熱穩定性。At this temperature, even if it is a polyimide having excellent heat resistance, it is easily thermally decomposed, and shrinkage or expansion due to heat may occur. Therefore, in order to prepare a flexible device, it is necessary to develop a polyimide that can maintain high transparency at high temperatures together with excellent mechanical characteristics and exhibit excellent thermal stability.
本發明提供一種聚醯亞胺前驅物組成物,其含有酸二酐、二胺、下述結構式表示的二甲基矽氧烷(DMS)-二苯基矽氧烷(DPS)低聚物、及於25℃下的分配係數(LogP)為正數且密度為1 g/cm3 以下的溶劑作為聚合成分。 The present invention provides a polyfluorene imide precursor composition containing an acid dianhydride, a diamine, and a dimethyl siloxane (DMS) -diphenyl siloxane (DPS) oligomer represented by the following structural formula. And a solvent having a positive partition coefficient (LogP) at 25 ° C and a density of 1 g / cm 3 or less as polymerization components.
於上述結構式中,p及q為莫耳分率,於p+q=100時,p為70至90,q為10至30。In the above structural formula, p and q are mole fractions. When p + q = 100, p is 70 to 90, and q is 10 to 30.
根據較佳的實施例,上述溶劑可為醯胺類溶劑,具體而言為選自二甲基丙醯胺(dimethylpropanamide,DMPA)或二乙基丙醯胺(diethylpropanamide,DEPA)中的一者。According to a preferred embodiment, the solvent may be an amidine solvent, specifically one selected from dimethylpropanamide (DMPA) or diethylpropanamide (DEPA).
再者,亦可一併使用選自N,N-二乙基乙醯胺(N,N-diethylacetamide,DEAc)、N,N-二乙基甲醯胺(N,N-diethylformamide,DEF)、N-乙基吡咯啶酮(N-ethylpyrrolidone,NEP)中的一種以上的溶劑。Furthermore, a combination of N, N-diethylacetamide (DEAc), N, N-diethylformamide (DEF), One or more solvents of N-ethylpyrrolidone (NEP).
本發明的聚醯亞胺的共聚物可藉由使用如上所述的有機溶劑來減少因導入有化學式1的結構的可撓性(flexible)聚醯亞胺重複結構與其他聚醯亞胺結構的極性差異引起的相分離而產生的白濁現象。先前,為了解決上述相分離而使用兩種有機溶劑,但本發明僅藉由使用一種有機溶劑即可減少白濁現象,從而可製備更透明的聚醯亞胺膜。The polyfluorene imide copolymer of the present invention can reduce the number of flexible polyfluorene imine repeating structures and other polyfluorene imines due to the introduction of the structure of Chemical Formula 1 by using the organic solvent described above. Phenomenon caused by phase separation caused by polarity difference. Previously, two organic solvents were used in order to solve the above-mentioned phase separation, but the present invention can reduce the cloudiness phenomenon by using only one organic solvent, so that a more transparent polyimide film can be prepared.
本發明利用包括分子量較高的Si結構的二胺於在25℃下的分配係數(LogP)為正數且密度為1 g/cm3 以下的有機溶劑中聚合酸二酐與二胺而製備聚醯亞胺,藉此可提供一種更無色透明,並且耐熱性優異、即熱膨脹收縮行為得到緩和的聚醯亞胺膜。In the present invention, a polyfluorene is prepared by polymerizing an acid dianhydride and a diamine in an organic solvent including a diamine having a higher molecular weight Si structure at a temperature of 25 ° C. and a positive logP and a density of 1 g / cm 3 or less. By this, imine can provide a polychromatic imide film which is more colorless and transparent, and which is excellent in heat resistance, that is, the thermal expansion and contraction behavior is relaxed.
根據一實施例,化學式1的二胺的分子量可為4000 g/mol以上,較佳為可具有4400 g/mol以上、更佳為5000 g/mol以上的分子量。此處,分子量是指重量平均分子量,分子量的計算可使用NMR分析或利用酸鹼基滴定法計算胺當量的方式。According to an embodiment, the molecular weight of the diamine of Chemical Formula 1 may be 4000 g / mol or more, preferably it may have a molecular weight of 4400 g / mol or more, and more preferably 5000 g / mol or more. Here, the molecular weight refers to a weight average molecular weight, and the molecular weight can be calculated by an NMR analysis or a method of calculating an amine equivalent by an acid-base titration method.
於包括上述化學式1的結構的二胺的分子量未滿4000 g/mol的情形時,耐熱性會下降,例如,所製備的聚醯亞胺的玻璃轉換溫度(Tg)會下降或熱膨脹係數過度地增加。When the molecular weight of the diamine including the structure of the above Chemical Formula 1 is less than 4000 g / mol, the heat resistance may decrease, for example, the glass transition temperature (Tg) of the prepared polyimide may decrease or the thermal expansion coefficient may be excessive. increase.
再者,於化學式1中,p及q為莫耳分率,於p+q=100時,p為70至90,q為10至30,若p超過90且q未滿10,則相容性劣化而發生相分離,會因前驅物溶液的白濁現象而所製備的膜產生霧度。再者,若p未滿70且q超過30,則殘餘應力減小效果會下降。 [化學式1] Furthermore, in Chemical Formula 1, p and q are Mohr fractions. When p + q = 100, p is 70 to 90 and q is 10 to 30. If p exceeds 90 and q is less than 10, they are compatible. Phase separation occurs due to deterioration in properties, and haze is produced in the prepared film due to the turbidity phenomenon of the precursor solution. When p is less than 70 and q exceeds 30, the effect of reducing the residual stress is reduced. [Chemical Formula 1]
根據一實施例,本發明可使用一種以上的二胺,於整體二胺中,可包括1莫耳%至20莫耳%、較佳為1莫耳%至10莫耳%的上述化學式1的二胺。According to an embodiment, more than one diamine may be used in the present invention. The overall diamine may include 1 mole% to 20 mole%, preferably 1 mole% to 10 mole%. Diamine.
根據一實施例,上述化學式1的二胺可相對於聚醯亞胺共聚物的整體固體成分,即聚醯亞胺前驅物固體成分的重量或上述聚合成分(二胺及酸二酐)的總重量而為10重量%至50重量%,較佳為可添加10重量%至40重量%。若相對於聚合物總重量過多地添加包括上述化學式1的結構的二胺、例如添加50重量%以上或40重量%以上,則如聚醯亞胺的模數(modulus)的機械特性會下降,膜強度減小,因此會於製程上產生膜撕裂等物理損傷。再者,於過多地添加具有化學式1的結構的二胺的情形時,會表現出來自具有上述矽氧烷結構的聚合物的玻璃轉換溫度(Tg),因此於350℃以下的低製程溫度下表現出玻璃轉換溫度(Tg),於進行350℃以上的無機膜沈積製程時,因聚合物的流動現象而膜表面產生褶皺,從而會產生無機膜裂開的現象。According to an embodiment, the diamine of the above Chemical Formula 1 may be relative to the overall solid content of the polyfluorene imine copolymer, that is, the weight of the solid content of the polyfluorene imide precursor or the total of the polymerization components (diamine and acid dianhydride). It is 10 to 50% by weight, and preferably 10 to 40% by weight can be added. If the diamine including the structure of the above Chemical Formula 1 is excessively added to the total weight of the polymer, for example, 50% by weight or 40% by weight or more is added, the mechanical properties such as the modulus of the polyimide will decrease, The film strength is reduced, so physical damage such as film tearing will occur during the process. In addition, when a diamine having the structure of Chemical Formula 1 is excessively added, the glass transition temperature (Tg) derived from the polymer having the above-mentioned siloxane structure is exhibited, and thus at a low process temperature of 350 ° C or lower It exhibits glass transition temperature (Tg). During the inorganic film deposition process above 350 ° C, the surface of the film is wrinkled due to the phenomenon of polymer flow, which causes the phenomenon of cracking of the inorganic film.
圖1是概略性地表示由本發明的前驅物組成物製備的共聚物的結構的示意圖。FIG. 1 is a schematic view showing a structure of a copolymer prepared from a precursor composition of the present invention.
本發明可藉由將包括矽氧烷結構的化學式1的結構插入至聚醯亞胺結構而提高聚醯亞胺的模數強度,可緩和因外力產生的應力。此時,包括矽氧烷結構的聚醯亞胺可表現出極性,會產生因與不包括矽氧烷結構的聚醯亞胺結構的極性差異引起的相分離,因此矽氧烷結構會不均勻地分佈至整個聚醯亞胺結構。於此情形時,不僅會難以表現出因矽氧烷結構實現的如提高聚醯亞胺的強度及緩和應力的效果的物性提高效果,而且因相分離而霧度增加,從而膜的透明性會下降。特別是,於包括矽氧烷結構的二胺具有高分子量的情形時,藉此製備的聚醯亞胺的極性表現地更明顯,從而會更明顯地表現出聚醯亞胺間的相分離現象。然而,如圖1b所示,於使用具有低分子量的結構的矽氧烷二胺的情形時,為了表現出緩和應力等效果,需添加較多的量,此種情形會產生於較低的溫度下產生玻璃轉換溫度(Tg)等製程問題,因此聚醯亞胺膜的物理特性會下降。因此,於添加高分子量的矽氧烷二胺的情形時,如圖1b所示,會於分子內較大地形成鬆弛鏈段(relaxation segment),因此亦能夠以少於低分子添加量的含量有效地表現出應力緩和效果。因此,本發明研究一種用以使包括具有上述高分子量的矽氧烷結構的化學式1的二胺不發生相分離而更均勻地分佈至聚醯亞胺基質上的方法。The present invention can increase the modulus strength of polyfluorene imine by inserting the structure of Chemical Formula 1 including a siloxane structure into the polyfluorene imine structure, and can alleviate the stress caused by external force. At this time, the polyfluorene imine including a siloxane structure may exhibit polarity, and phase separation may occur due to a difference in polarity from the polyfluorine imine structure not including a siloxane structure, so that the siloxane structure may be uneven. Ground distribution to the entire polyimide structure. In this case, it is not only difficult to show the effect of improving the physical properties such as the effect of increasing the strength of the polyimide and the effect of reducing the stress due to the siloxane structure, but also the haze due to phase separation is increased, so that the transparency of the film may be decline. In particular, in the case where the diamine including the siloxane structure has a high molecular weight, the polarity of the polyimide prepared therefrom becomes more obvious, and thus the phase separation phenomenon between polyimide is more apparent. . However, as shown in FIG. 1b, in the case of using a siloxane diamine having a low molecular weight structure, in order to exhibit effects such as stress relaxation, a larger amount needs to be added, which may occur at a lower temperature. Process problems such as glass transition temperature (Tg) will occur, so the physical properties of polyimide film will decrease. Therefore, when a high-molecular-weight siloxane diamine is added, as shown in FIG. 1b, a relaxation segment is largely formed in the molecule, so it can also be effective at a content less than the low-molecular-weight addition amount. The ground shows a stress relaxation effect. Therefore, the present invention studies a method for making the diamine of Chemical Formula 1 including the above-mentioned high-molecular weight siloxane structure more uniformly distributed on a polyimide matrix without phase separation.
為了解決上述問題,亦有混合極性溶劑與非極性溶劑而使用的方法,但極性溶劑具有揮發性較高的傾向,因此於製備製程中會產生預先揮發等問題,故而不僅會產生製程的再現性下降等問題,而且會無法徹底改善相分離問題,因此所製備的聚醯亞胺膜的霧度會變高而透明度下降。於本發明中,為了將包括化學式1的結構的聚醯亞胺結構均勻地分佈至聚醯亞胺基質整體而使用分配係數(LogP)為正數的溶劑、特別是使用分配係數(LogP)為正數的胺類溶劑,更具體而言,藉由使用包括溶劑的分子具有兩親媒性的結構的溶劑,不僅可解決因使用極性溶劑引起的製程問題,而且因具有兩親媒性的分子結構而即便僅使用一種溶劑亦可使聚醯亞胺均勻地分佈,因此非常適於解決因相分離引起的問題,藉此可提供一種霧度特性得到明顯改善的聚醯亞胺。In order to solve the above problems, there is also a method of mixing a polar solvent and a non-polar solvent. However, the polar solvent tends to have high volatility. Therefore, problems such as pre-volatilization may occur during the preparation process, so not only the reproducibility of the process will be produced. And other problems, and the problem of phase separation cannot be completely improved, so the haze of the prepared polyimide film will become high and the transparency will decrease. In the present invention, in order to uniformly distribute the polyfluorene imine structure including the structure of Chemical Formula 1 to the entire polyimide matrix, a solvent having a positive distribution coefficient (LogP) is used, and particularly a positive distribution coefficient (LogP) is used. Amine solvents, more specifically, by using a solvent including a solvent having an amphiphilic structure, not only can solve the process problems caused by the use of polar solvents, but also because of the amphiphilic molecular structure Even if only one kind of solvent is used, the polyimide can be uniformly distributed, so it is very suitable for solving the problem caused by phase separation, thereby providing a polyimide having significantly improved haze characteristics.
根據一實施例,上述四羧酸二酐可為選自於分子結構中包括下述化學式2a至化學式2h的四價有機基團的四羧酸二酐中的一者。 [化學式2a][化學式2b][化學式2c][化學式2d][化學式2e][化學式2f][化學式2g][化學式2h] According to an embodiment, the tetracarboxylic dianhydride may be one selected from the group consisting of tetracarboxylic dianhydrides having a tetravalent organic group of the following chemical formula 2a to chemical formula 2h in a molecular structure. [Chemical Formula 2a] [Chemical Formula 2b] [Chemical Formula 2c] [Chemical Formula 2d] [Chemical Formula 2e] [Chemical Formula 2f] [Chemical Formula 2g] [Chemical Formula 2h]
於上述化學式2a至化學式2h中,上述R11 至R24 可分別獨立地為選自包括-F、-Cl、-Br及-I的鹵素原子、羥基(-OH)、硫醇基(-SH)、硝基(-NO2 )、氰基、碳原子數為1至10的烷基、碳原子數為1至4的鹵代烷氧基、碳原子數為1至10的鹵代烷基、碳原子數為6至20的芳基中的取代基, 上述a1可為0至2的整數,a2為0至4的整數,a3為0至8的整數,a4及a5分別獨立地為0至3的整數,a7及a8分別獨立地為0至3的整數,a10及a12分別獨立地為0至3的整數,a11為0至4的整數,a15及a16分別獨立地為0至4的整數,a17及a18分別獨立地為0至4的整數,a6、a9、a13、a14、a19、a20分別獨立地為0至3的整數, n為1至3的整數, A11 至A16 可分別獨立地為選自由-O-、-CR'R"-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者,其中上述R'及R"分別獨立地為選自由氫原子、碳原子數為1至10的烷基及碳原子數為1至10的氟烷基所組成的族群中的一者。In the above Chemical Formulas 2a to 2h, the above R 11 to R 24 may be each independently selected from a halogen atom including -F, -Cl, -Br, and -I, a hydroxyl group (-OH), and a thiol group (-SH ), Nitro (-NO 2 ), cyano, alkyl having 1 to 10 carbon atoms, haloalkoxy having 1 to 4 carbon atoms, haloalkyl having 1 to 10 carbon atoms, carbon number Is a substituent in an aryl group of 6 to 20, the above a1 may be an integer of 0 to 2, a2 is an integer of 0 to 4, a3 is an integer of 0 to 8, and a4 and a5 are each independently an integer of 0 to 3 , A7 and a8 are independently integers from 0 to 3, a10 and a12 are independently integers from 0 to 3, a11 is an integer from 0 to 4, a15 and a16 are independently integers from 0 to 4, a17 and a16 are independently a18 is independently an integer from 0 to 4, a6, a9, a13, a14, a19, a20 are each independently an integer from 0 to 3, n is an integer from 1 to 3, and A 11 to A 16 may be independently Selected from -O-, -CR'R "-, -C (= O)-, -C (= O) O-, -C (= O) NH-, -S-, -SO 2- , benzene One of the groups consisting of a radical and a combination thereof, wherein the R 'and R "are each independently selected from the group consisting of a hydrogen atom and a carbon number of 1 to 10 One of the groups consisting of an alkyl group and a fluoroalkyl group having 1 to 10 carbon atoms.
除上述化學式1的二胺以外,本發明可包括於整體二胺含量中包括80莫耳%至99莫耳%的於分子結構中包含下述化學式3的二價有機基團的二胺作為二胺。 [化學式3] In addition to the diamine of the above Chemical Formula 1, the present invention may include a diamine including 80 mol% to 99 mol% in the overall diamine content and containing a divalent organic group of the following Chemical Formula 3 in the molecular structure as a diamine. amine. [Chemical Formula 3]
於上述化學式3中, 上述R31 、R32 可分別獨立地為選自包括-F、-Cl、-Br及-I的鹵素原子、羥基(-OH)、硫醇基(-SH)、硝基(-NO2 )、氰基、碳原子數為1至10的烷基、碳原子數為1至4的鹵代烷氧基、碳原子數為1至10的鹵代烷基、碳原子數為6至20的芳基中的取代基,較佳為選自鹵素原子、鹵代烷基、烷基、芳基及氰基中的取代基。例如,上述鹵素原子可為氟(-F),鹵代烷基作為包括氟類原子的碳原子數為1至10的氟烷基,可為選自氟甲基、全氟乙基、三氟甲基等中的一者,上述烷基可為選自甲基、乙基、丙基、異丙基、第三丁基、戊基、己基中的一者,上述芳基可為選自苯基、萘基中的一者,更佳為可為包括氟原子及氟烷基等氟類原子的取代基。In the above Chemical Formula 3, the R 31 and R 32 may be each independently selected from a halogen atom including -F, -Cl, -Br, and -I, a hydroxyl group (-OH), a thiol group (-SH), and a nitrate. (-NO 2 ), cyano, alkyl having 1 to 10 carbon atoms, haloalkoxy having 1 to 4 carbon atoms, haloalkyl having 1 to 10 carbon atoms, and 6 to 6 carbon atoms The substituent in the aryl group of 20 is preferably a substituent selected from a halogen atom, a halogenated alkyl group, an alkyl group, an aryl group, and a cyano group. For example, the above halogen atom may be fluorine (-F), and the halogenated alkyl group may include a fluorine-based atom having 1 to 10 carbon atoms, and may be selected from a fluoromethyl group, a perfluoroethyl group, and a trifluoromethyl group. The alkyl group may be one selected from methyl, ethyl, propyl, isopropyl, third butyl, pentyl, and hexyl, and the aryl may be selected from phenyl, One of the naphthyl groups is more preferably a substituent containing a fluorine atom such as a fluorine atom and a fluoroalkyl group.
Q可為選自由單鍵、-O-、-CR'R"-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者,此時上述R'及R"分別獨立地為選自由氫原子、碳原子數為1至10的烷基及碳原子數為1至10的氟烷基所組成的族群中的一者。Q may be selected from a single bond, -O-, -CR'R "-, -C (= O)-, -C (= O) O-, -C (= O) NH-, -S-,- One of the groups consisting of SO 2- , phenylene, and combinations thereof, at this time, the above R 'and R "are each independently selected from a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, and a carbon number One of the groups consisting of 1 to 10 fluoroalkyl groups.
於此,本發明的「氟類取代基」不僅是指「氟原子取代基」,而且是指「含有氟原子的取代基」。Here, the "fluorine-based substituent" in the present invention means not only a "fluorine-based substituent" but also a "fluorine-containing substituent".
具體而言,上述化學式3的二胺可為選自以下述化學式3a至化學式3d表示的化合物中的一者。 Specifically, the diamine of the above Chemical Formula 3 may be one selected from the compounds represented by the following Chemical Formulas 3a to 3d.
於上述化學式3a至化學式3d中,Q與如上所述的內容相同。In the above Chemical Formulas 3a to 3d, Q is the same as described above.
根據一實施例,上述四羧酸二酐可於整體四羧酸二酐中包括20莫耳%至80莫耳%、較佳為30莫耳%至80莫耳%、更佳為30莫耳%至70莫耳%的包含下述化學式4的結構的四羧酸二酐。 [化學式4] According to an embodiment, the above tetracarboxylic dianhydride may include 20 mol% to 80 mol%, preferably 30 mol% to 80 mol%, and more preferably 30 mol in the overall tetracarboxylic dianhydride. % To 70 mol% of a tetracarboxylic dianhydride containing a structure of the following Chemical Formula 4. [Chemical Formula 4]
根據一實施例,上述四羧酸二酐可於整體四羧酸二酐中包括20莫耳%至80莫耳%、較佳為20莫耳%至60莫耳%、更佳為20莫耳%至50莫耳%的包含下述化學式5的結構的四羧酸二酐。 [化學式5] According to an embodiment, the above tetracarboxylic dianhydride may include 20 mol% to 80 mol%, preferably 20 mol% to 60 mol%, and more preferably 20 mol in the overall tetracarboxylic dianhydride. % To 50 mol% of a tetracarboxylic dianhydride containing a structure of the following Chemical Formula 5. [Chemical Formula 5]
於上述化學式5中, Q1 及Q2 分別獨立地為選自由單鍵、-O-、-C(=O)-、-C(=O)O-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者。In the above Chemical Formula 5, Q 1 and Q 2 are each independently selected from a single bond, -O-, -C (= O)-, -C (= O) O-, -C (= O) NH-, One of the groups consisting of -S-, -SO 2- , phenylene, and combinations thereof.
根據一實施例,上述化學式5可為下述化學式5a至化學式5e的化合物。 According to an embodiment, the aforementioned chemical formula 5 may be a compound of the following chemical formula 5a to 5e.
可藉由在聚醯亞胺結構中包括包含上述茀結構的重複結構而減小膜的厚度方向的相位差。The phase difference in the thickness direction of the film can be reduced by including a repeating structure including the fluorene structure in the polyfluoreneimine structure.
本發明可連同上述化學式4或化學式5的四羧酸二酐一併使用選自包括下述化學式6a至化學式6r的四價有機基團結構的四羧酸二酐中的一種以上。 In the present invention, one or more types of tetracarboxylic dianhydride selected from a tetravalent organic group structure including the following chemical formula 6a to chemical formula 6r may be used together with the tetracarboxylic dianhydride of Chemical Formula 4 or Chemical Formula 5.
於上述6l中,A2 可為選自由單鍵、-O-、-C(=O)-、-C(=O)NH-、-S-、-SO2 -、伸苯基及其組合所組成的族群中的一者,v為0或1的整數,於上述6r中,x為1至10的整數。In the above 6l, A 2 may be selected from a single bond, -O-, -C (= O)-, -C (= O) NH-, -S-, -SO 2- , phenylene, and combinations thereof. In one of the formed groups, v is an integer of 0 or 1, and in the above 6r, x is an integer of 1 to 10.
再者,存在於上述6a至6r的四價有機基團中的1個以上的氫原子可由選自包括-F、-Cl、-Br及-I的鹵素原子、羥基(-OH)、硫醇基(-SH)、硝基(-NO2 )、氰基、碳原子數為1至10的烷基、碳原子數為1至4的鹵代烷氧基、碳原子數為1至10的鹵代烷基、碳原子數為6至20的芳基中的取代基取代。In addition, one or more hydrogen atoms in the tetravalent organic groups of 6a to 6r may be selected from halogen atoms including -F, -Cl, -Br, and -I, a hydroxyl group (-OH), and a thiol. (-SH), nitro (-NO 2 ), cyano, alkyl having 1 to 10 carbon atoms, haloalkoxy having 1 to 4 carbon atoms, haloalkyl having 1 to 10 carbon atoms 2. Substituting the substituent in the aryl group having 6 to 20 carbon atoms.
可選地,本發明可一併使用上述化學式4及化學式5的四羧酸二酐,於一併使用上述化學式4及化學式5的四羧酸二酐的情形時,相對於上述四羧酸二酐的總含量,可包括10莫耳%至30莫耳%、較佳為10莫耳%至25莫耳%、更佳為15莫耳%至25莫耳%的含量的上述化學式5的四羧酸二酐。包括上述茀結構的化學式5的化合物與以化學式4表示的化合物一併用於製備聚醯亞胺,藉此因熱產生的面方向收縮特性得到緩和,從而可改善於加熱製程後進行冷卻製程時產生的膜收縮現象且提高如玻璃轉換溫度的耐熱性。Alternatively, in the present invention, the tetracarboxylic dianhydrides of Chemical Formula 4 and Chemical Formula 5 may be used together, and when the tetracarboxylic dianhydrides of Chemical Formula 4 and Chemical Formula 5 are used together, compared with the tetracarboxylic dianhydride described above, The total content of the anhydride may include the content of 10 to 30 mol%, preferably 10 to 25 mol%, and more preferably 15 to 25 mol%. Carboxylic dianhydride. The compound of Chemical Formula 5 including the above-mentioned fluorene structure and the compound represented by Chemical Formula 4 are used together to prepare polyfluorene imine, thereby reducing the surface shrinkage characteristics due to heat, which can improve the generation during cooling process after heating process. The film shrinks and improves heat resistance such as glass transition temperature.
根據本發明的一實施例,四羧酸二酐的總含量與上述二胺的含量能夠以1:1.1至1.1:1的莫耳比進行反應,為了提高反應性及加工性,較佳為以上述四羧酸二酐的總含量多於二胺的方式進行反應、或以二胺的含量多於四羧酸二酐的總含量的方式進行反應。According to an embodiment of the present invention, the total content of the tetracarboxylic dianhydride and the content of the diamine can be reacted at a molar ratio of 1: 1.1 to 1.1: 1. In order to improve reactivity and processability, it is preferred to The reaction is carried out such that the total content of the tetracarboxylic dianhydride is more than the diamine, or the reaction is carried out such that the content of the diamine is more than the total content of the tetracarboxylic dianhydride.
根據本發明的一實施例,較佳為上述四羧酸二酐的總含量與二胺的含量能夠以1:0.99至0.99:1、較佳為1:0.98至0.98:1的莫耳比進行反應。According to an embodiment of the present invention, preferably, the total content of the tetracarboxylic dianhydride and the content of the diamine can be performed at a molar ratio of 1: 0.99 to 0.99: 1, preferably 1: 0.98 to 0.98: 1. reaction.
再者,作為可使用於上述聚合反應的有機溶劑,可為於25℃下的分配係數(LogP的值)為正數、沸點為180℃以下且密度為1 g/cm3 以下者,更具體而言,分配係數(LogP)的值可為0.01至3、0.1至2或0.5至1.5。二甲基丙醯胺(dimethylpropanamide,DMPA)及二乙基丙醯胺(diethylpropanamide,DEPA)的分配係數分別為0.504及1.275,密度為約0.876 g/cm3 及0.870 g/cm3 。Further, as the organic solvent that can be used for the above-mentioned polymerization reaction, a partition coefficient (LogP value) at 25 ° C is a positive number, a boiling point is 180 ° C or less, and a density is 1 g / cm 3 or less, more specifically, In other words, the value of the distribution coefficient (LogP) can be 0.01 to 3, 0.1 to 2, or 0.5 to 1.5. The partition coefficients of dimethylpropanamide (DMPA) and diethylpropanamide (DEPA) are 0.504 and 1.275, respectively, and the density is about 0.876 g / cm 3 and 0.870 g / cm 3 .
上述分配係數可使用ACD/Labs公司的ACD/Percepta平台(platform)的ACD/LogP模組(module)進行計算,ACD/LogP模組利用分子的二維結構,利用基於定量結構性質關係(Quantitative Structure-Property Relationship,QSPR)方法論的演算法。The above distribution coefficients can be calculated using the ACD / LogP module of the ACD / Labs company's ACD / Percepta platform. The ACD / LogP module uses the two-dimensional structure of the molecule and uses the quantitative structural property relationship (Quantitative Structure). -Property Relationship (QSPR) methodological algorithm.
於上述分配係數值為正數的情形時,意味著溶劑的極性為疏水性,根據本發明者等人的研究,可知若使用分配係數值為正數的特定溶劑製備聚醯亞胺前驅物組成物,則溶液的捲曲特性得到改善。再者,如上所述,本發明使用分配係數(LogP)為正數的溶劑,因此具有如下效果:即便不使用如調平劑的調節素材的表面張力及塗膜的平滑性的添加劑,亦可控制溶液的液體捲曲現象,由於不使用添加劑等附加的添加劑,因此不僅可消除於最終產物中含有低分子物質等品質及製程問題,而且可更有效率地形成具有均勻的特性的聚醯亞胺膜。In the case where the above-mentioned partition coefficient value is positive, it means that the polarity of the solvent is hydrophobic. According to the research by the inventors, it can be known that if a specific solvent with a positive partition coefficient is used to prepare the polyimide precursor composition, Then, the curling characteristics of the solution are improved. Furthermore, as described above, the present invention uses a solvent having a positive coefficient of distribution (LogP), and therefore has the effect of controlling the surface tension of the material and the smoothness of the coating film without using an additive such as a leveling agent, which can be controlled. The liquid curl phenomenon of the solution, because no additional additives such as additives are used, can not only eliminate the quality and process problems of containing low molecular substances in the final product, but also form a polyimide film with uniform characteristics more efficiently. .
例如,於將聚醯亞胺前驅物組成物塗覆至玻璃基板的製程中,於硬化時或於濕度條件下放置塗覆液時,會產生因塗覆層的收縮引起的溶液捲曲現象。此種塗覆溶液的液體捲曲現象會使膜的厚度產生偏差,從而膜的耐彎曲性不足而會產生膜斷裂、或於切割時邊角破裂的現象,因此會產生製程上的作業性較差且產率下降的問題。For example, in the process of applying a polyimide precursor composition to a glass substrate, when the coating liquid is placed during hardening or under a humidity condition, a solution curl phenomenon due to shrinkage of the coating layer may occur. Such a liquid curling phenomenon of the coating solution may cause a deviation in the thickness of the film, thereby causing insufficient bending resistance of the film, which may cause the film to break or the corners to break during cutting. Therefore, the workability in the manufacturing process is poor and The problem of reduced yield.
再者,於具有極性的微小異物流入至塗佈於基板上的聚醯亞胺前驅物組成物的情形時,包括分配係數(LogP)為負數的極性溶劑的聚醯亞胺前驅物組成物會因上述異物所具有的極性而以異物的位置為基準局部地發生塗層的龜裂或厚度變化,但於使用分配係數(LogP)為正數的疏水性溶劑的情形時,即便流入具有極性的微小異物,亦可減少或抑制因塗層的龜裂引起的厚度變化等。In addition, when a polar foreign substance flows into a polyimide precursor composition coated on a substrate, a polyimide precursor composition including a polar solvent having a negative partition coefficient (LogP) may result. Due to the polarity of the foreign matter, cracks or thickness changes of the coating occur locally based on the position of the foreign matter. However, even when a hydrophobic solvent with a positive partition coefficient (LogP) is used, even small polar flows Foreign matter can also reduce or suppress thickness changes caused by cracks in the coating.
具體而言,包括分配係數(LogP)為正數的溶劑的聚醯亞胺前驅物組成物的以下述式1定義的捲曲率(dewetting ratio)可為0%至0.1%以下。Specifically, a polyimide precursor composition including a solvent having a positive partition coefficient (LogP) may have a dewetting ratio defined by the following Formula 1 of 0% to 0.1% or less.
[式1] 捲曲率(%)=[(A-B)/A]×100[Formula 1] Curling rate (%) = [(A-B) / A] × 100
於上述式1中, A:聚醯亞胺前驅物組成物完全塗覆於基板(100 mm×100 mm)上的狀態下的面積, B:自塗覆有聚醯亞胺前驅物組成物或PI膜的基板的邊緣末端產生捲曲現象後的面積。In the above formula 1, A: the area in a state where the polyfluorene imide precursor composition is completely coated on the substrate (100 mm × 100 mm), and B: self-coated with the polyfluorene imide precursor composition or The area after the edge of the substrate of the PI film is curled.
會於塗覆聚醯亞胺前驅物組成物溶液後30分鐘以內產生此種聚醯亞胺前驅物組成物及膜的液體捲曲(dewetting)現象,特別是自邊緣開始捲起,因此會較厚地形成邊緣的厚度。The liquid dewetting phenomenon of the polyimide precursor composition and the film may occur within 30 minutes after the polyimide precursor composition solution is applied, and especially it starts to roll up from the edges, so it will be thicker. The thickness of the formed edges.
於將本發明的聚醯亞胺前驅物組成物塗覆至基板後,放置10分鐘以上(例如於濕度條件下放置10分鐘以上、例如40分鐘以上的時間)後的所塗覆的上述樹脂組成物溶液的捲曲率可為0.1%以下,例如於20℃至30℃的溫度下,以40%以上的濕度條件、更具體而言以40%至80%的範圍的濕度條件(即40%、50%、60%、70%、80%的各濕度條件)、例如以50%的濕度條件放置10分鐘至50分鐘後,亦可表現出0.1%以下的非常小的捲曲率,較佳為可表現出0.05%、更佳為幾乎接近0%的捲曲率。After the polyimide precursor composition of the present invention is applied to a substrate, the applied resin composition is left for 10 minutes or longer (for example, under a humidity condition for 10 minutes or longer, such as 40 minutes or longer). The curling rate of the material solution may be 0.1% or less, for example, at a temperature of 20 ° C to 30 ° C, under a humidity condition of 40% or more, more specifically, a humidity condition in a range of 40% to 80% (that is, 50%, 60%, 70%, 80% of each humidity condition), for example, after being left for 10 minutes to 50 minutes under 50% humidity conditions, it can also show a very small curl rate of less than 0.1%, preferably it can be It exhibited a curl rate of 0.05%, more preferably almost 0%.
於硬化後亦保持如上所述的捲曲率,例如,於將聚醯亞胺前驅物組成物塗覆至基板後,於放置10分鐘以上、例如於20℃至30℃的溫度下以40%以上的濕度條件、更具體而言以40%至80%的範圍的濕度條件(即40%、50%、60%、70%、80%的各濕度條件)、例如以50%的濕度條件放置10分鐘至50分鐘後,硬化的聚醯亞胺膜的捲曲率可為0.1%以下,即,於藉由熱處理進行的硬化製程中,亦幾乎不產生捲曲或不存在捲曲,具體而言,可表現出0.05%、更佳為幾乎接近0%的捲曲率。The curling rate as described above is also maintained after hardening. For example, after the polyimide precursor composition is applied to a substrate, it is left for more than 10 minutes, for example, at a temperature of 20 ° C to 30 ° C at 40% or more. Humidity conditions, more specifically, humidity conditions in the range of 40% to 80% (ie, humidity conditions of 40%, 50%, 60%, 70%, 80%), for example, placed at 50% humidity conditions for 10 After 15 minutes to 50 minutes, the curl rate of the cured polyimide film can be 0.1% or less, that is, in the hardening process by heat treatment, there is almost no curl or no curl. Specifically, it can express A curl rate of 0.05%, more preferably almost close to 0%.
本發明的聚醯亞胺前驅物組成物可藉由解決此種液體捲曲現象而獲得具有更均勻的特性的聚醯亞胺膜,從而可進一步提高製備製程的產率。The polyfluorene imide precursor composition of the present invention can obtain a polyfluorene imide film with more uniform characteristics by solving such a liquid curl phenomenon, thereby further improving the yield of the preparation process.
再者,可藉由美國材料試驗協會(American Society for Testing Materials,ASTM)D1475的標準測定方法而測定本發明的溶劑的密度,上述密度可為1 g/cm3 以下,於密度具有1 g/cm3 以上的值的情形時,相對黏度會變高,從而製程效率會下降。In addition, the density of the solvent of the present invention can be measured by a standard measurement method of American Society for Testing Materials (ASTM) D1475. The density may be 1 g / cm 3 or less, and the density may be 1 g / cm 3 . When the value is greater than cm 3 , the relative viscosity becomes high, and the process efficiency decreases.
可根據聚醯亞胺前驅物的典型聚合製備方法(如溶液聚合)來實施使上述四羧酸二酐與二胺反應的方法,具體而言,可藉由如下方法製備:將二胺溶解於有機溶劑中後,於所獲得的混合溶液中添加四羧酸二酐以進行聚合反應。The method for reacting the above tetracarboxylic dianhydride with a diamine can be implemented according to a typical polymerization preparation method of a polyimide precursor (such as solution polymerization). Specifically, the method can be prepared by dissolving the diamine in After being in an organic solvent, tetracarboxylic dianhydride was added to the obtained mixed solution to perform a polymerization reaction.
根據一實施例,可藉由包括如下步驟的方法進行聚合: a)將上述化學式1的二胺投入至有機溶劑的步驟; b)將化學式3的二胺投入至在上述a)步驟中製備的溶液的步驟; c)將一種以上的四羧酸二酐投入至在上述b)步驟中製備的溶液的步驟;及 d)於特定的反應溫度下聚合於上述c)步驟中製備的溶液的步驟。According to an embodiment, the polymerization may be performed by a method including the following steps: a) a step of feeding the diamine of the above chemical formula 1 into an organic solvent; b) a diamine of the chemical formula 3 into the step prepared in the step a) A solution step; c) a step of adding more than one tetracarboxylic dianhydride to the solution prepared in step b) above; and d) a step of polymerizing the solution prepared in step c) above at a specific reaction temperature .
上述反應可於惰性氣體或氮氣氣流下實施,且可於無水條件下執行。The above reaction can be performed under an inert gas or nitrogen gas stream, and can be performed under anhydrous conditions.
再者,於進行上述聚合反應時,可於-20℃至80℃、較佳為0℃至80℃的反應溫度下實施。於反應溫度過高的情形時,反應性變高而分子量會變大,前驅物組成物的黏度上升,因此會於製程上不利。The polymerization reaction may be carried out at a reaction temperature of -20 ° C to 80 ° C, preferably 0 ° C to 80 ° C. When the reaction temperature is too high, the reactivity becomes high and the molecular weight becomes large, and the viscosity of the precursor composition increases, which is disadvantageous in the manufacturing process.
考量到膜形成製程時的塗佈性等加工性,根據上述製備方法製備的聚醯亞胺前驅物組成物較佳為包括能使上述組成物具有適當的黏度的量的固體成分。根據一實施例,能夠以整體聚醯亞胺前驅物的含量成為8重量%至25重量%、較佳為10重量%至25重量%、更佳為10重量%至20重量%以下的方式調節組成物的含量。In consideration of processability such as coatability during the film formation process, the polyimide precursor composition prepared according to the above-mentioned production method preferably includes a solid component in an amount capable of providing the composition with an appropriate viscosity. According to an embodiment, it can be adjusted so that the content of the whole polyimide precursor becomes 8 to 25% by weight, preferably 10 to 25% by weight, and more preferably 10 to 20% by weight. The content of the composition.
可選地,上述聚醯亞胺前驅物組成物可為以具有3,000 cP以上或4,000 cP以上的黏度的方式調節,上述聚醯亞胺前驅物組成物的黏度較佳為以具有10,000 cP以下、較佳為9,000 cP以下、更佳為8,000 cP以下的黏度的方式調節。於聚醯亞胺前驅物組成物的黏度超過10,000 cP的情形時,在對聚醯亞胺膜進行加工時,消泡效率下降,因此不僅製程效率下降,而且所製備的膜亦會因氣泡的產生而表面粗糙度欠佳,從而電特性、光學特性、機械特性下降。Optionally, the polyimide precursor composition may be adjusted to have a viscosity of 3,000 cP or more or 4,000 cP or more. The viscosity of the polyimide precursor composition is preferably 10,000 cP or less, The viscosity is preferably adjusted to 9,000 cP or less, and more preferably 8,000 cP or less. When the viscosity of the polyimide precursor composition exceeds 10,000 cP, when the polyimide film is processed, the defoaming efficiency is reduced, so not only the process efficiency is reduced, but also the prepared film may be affected by bubbles. This results in poor surface roughness, which reduces electrical, optical, and mechanical properties.
再者,本發明的聚醯亞胺的分子量可具有10,000 g/mol至200,000 g/mol、20,000 g/mol至100,000 g/mol或30,000 g/mol至100,000 g/mol的重量平均分子量。再者,本發明的聚醯亞胺的分子量分佈(Mw/Mn)較佳為1.1至2.5。於聚醯亞胺的重量平均分子量或分子量分佈脫離上述範圍的情形時,存在會難以形成膜、或透射度、耐熱性及機械特性等聚醯亞胺類膜的特性下降的疑慮。Furthermore, the molecular weight of the polyimide of the present invention may have a weight average molecular weight of 10,000 g / mol to 200,000 g / mol, 20,000 g / mol to 100,000 g / mol, or 30,000 g / mol to 100,000 g / mol. The molecular weight distribution (Mw / Mn) of the polyfluorene imine of the present invention is preferably 1.1 to 2.5. When the weight average molecular weight or molecular weight distribution of the polyfluorene imide deviates from the above range, there is a concern that it is difficult to form a film, or the characteristics of the polyfluorene imide film such as transmittance, heat resistance, and mechanical properties are reduced.
接著,將上述聚合反應後所獲得的聚醯亞胺前驅物醯亞胺化,藉此可製備透明的聚醯亞胺膜。此時,具體而言,上述醯亞胺化製程可包括化學醯亞胺化方法或熱醯亞胺化方法。Next, the polyfluorene imide precursor obtained after the polymerization reaction is fluorinated, whereby a transparent polyfluorene imide film can be prepared. At this time, specifically, the aforementioned fluorene imidization process may include a chemical fluorene imidization method or a thermal fluorene imidization method.
例如,可藉由如下方法獲得聚醯亞胺:於在所聚合的上述聚醯亞胺前驅物組成物中添加脫水劑及醯亞胺化觸媒後,以50℃至100℃的溫度加熱而藉由化學反應進行醯亞胺化、或同時使上述溶液回流與去除醇而進行醯亞胺化。For example, polyimide can be obtained by adding a dehydrating agent and an imidization catalyst to the polymerized polyimide precursor composition, followed by heating at a temperature of 50 ° C to 100 ° C. The amidine imidization is performed by a chemical reaction, or the above solution is refluxed and the alcohol is removed simultaneously.
於上述化學醯亞胺化方法中,可使用吡啶、三乙胺、甲基吡啶或喹啉等作為上述醯亞胺化觸媒,除此之外,有經取代或未經取代的含氮雜環化合物、含氮雜環化合物的N-氧化物化合物、經取代或未經取代的胺基酸化合物、具有羥基的芳香族烴化合物或芳香族雜環狀化合物,特別是亦可使用1,2-二甲基咪唑、N-甲基咪唑、N-苄基-2-甲基咪唑、2-甲基咪唑、2-乙基-4-甲基咪唑、5-甲基苯并咪唑等咪唑衍生物、異喹啉、3,5-二甲基吡啶、3,4-二甲基吡啶、2,5-二甲基吡啶、2,4-二甲基吡啶、4-正丙基吡啶等取代吡啶、對甲苯磺酸等。In the above chemical fluorene imidization method, pyridine, triethylamine, methylpyridine, or quinoline can be used as the fluorene imidization catalyst. In addition, there are substituted or unsubstituted nitrogen-containing heterocycles. Ring compounds, N-oxide compounds of nitrogen-containing heterocyclic compounds, substituted or unsubstituted amino acid compounds, aromatic hydrocarbon compounds having a hydroxyl group or aromatic heterocyclic compounds, and in particular, 1,2 can also be used -Derived from imidazole such as dimethylimidazole, N-methylimidazole, N-benzyl-2-methylimidazole, 2-methylimidazole, 2-ethyl-4-methylimidazole, 5-methylbenzimidazole, etc. Substance, isoquinoline, 3,5-dimethylpyridine, 3,4-dimethylpyridine, 2,5-dimethylpyridine, 2,4-dimethylpyridine, 4-n-propylpyridine, etc. Pyridine, p-toluenesulfonic acid and the like.
可使用乙酸酐等酸酐作為上述脫水劑。An acid anhydride such as acetic anhydride can be used as the above-mentioned dehydrating agent.
可選地,可藉由在基板上塗佈上述聚醯亞胺前驅物組成物後進行熱處理的方法進行醯亞胺化。Alternatively, the imidization may be performed by a method in which the polyimide precursor composition is coated on the substrate and then heat-treated.
上述聚醯亞胺前驅物組成物可呈溶解於有機溶劑中的溶液形態,於呈此種形態的情形時、或例如於在有機溶劑中合成聚醯亞胺前驅物的情形時,溶液可為所獲得的反應溶液其本身,亦可為以其他溶劑稀釋上述反應溶液所得者。再者,於以粉末形式獲得聚醯亞胺前驅物的情形時,亦可為將上述粉末溶解至有機溶劑而製成的溶液。The above polyfluorene imide precursor composition may be in the form of a solution dissolved in an organic solvent, and in such a case, or when the polyfluorine imide precursor is synthesized in an organic solvent, the solution may be The obtained reaction solution itself may be one obtained by diluting the reaction solution with another solvent. When the polyimide precursor is obtained as a powder, the solution may be a solution prepared by dissolving the powder in an organic solvent.
本發明提供一種聚醯亞胺膜的製備方法,其包括: 將上述聚醯亞胺前驅物組成物塗佈至基板上的步驟;及 對所塗佈的上述聚醯亞胺前驅物組成物進行熱處理的步驟。The invention provides a method for preparing a polyfluorene imide film, comprising: a step of coating the polyfluorine imide precursor composition on a substrate; and performing the coating on the polyfluorine imide precursor composition. Steps of heat treatment.
將上述聚醯亞胺前驅物組成物塗佈至基板,於紅外線(Infrared,IR)烘箱、熱風烘箱內或加熱板上進行熱處理,此時,上述熱處理溫度可為300℃至500℃、較佳為320℃至480℃的溫度範圍,亦可於上述溫度範圍內按照多步驟進行加熱處理。上述熱處理製程可進行20分鐘至70分鐘,較佳為可進行20分鐘至60分鐘左右。The above polyfluorene imide precursor composition is coated on a substrate, and heat treatment is performed in an infrared (IR) oven, a hot air oven, or a hot plate. At this time, the heat treatment temperature may be 300 ° C to 500 ° C, preferably The temperature range is from 320 ° C to 480 ° C, and the heat treatment can also be performed in multiple steps within the above temperature range. The heat treatment process can be performed for 20 minutes to 70 minutes, and preferably for about 20 minutes to 60 minutes.
含有於本發明的聚醯亞胺前驅物組成物的上述有機溶劑可使用與上述合成反應時使用的有機溶劑相同者。As the organic solvent contained in the polyfluorene imide precursor composition of the present invention, the same organic solvent as used in the above-mentioned synthesis reaction can be used.
只要在不損害效果的範圍下,本發明亦可添加矽烷偶合劑、交聯性化合物及以有效率地進行醯亞胺化為目的的醯亞胺化促進劑等。As long as the effect is not impaired, the present invention may also include a silane coupling agent, a crosslinkable compound, and a fluorene imidation accelerator for the purpose of efficiently performing fluorimidization.
再者,上述聚醯亞胺類膜的霧度(Haze)可具有2以下、較佳為1以下或0.9以下的霧度值,從而可提供一種透明性得到改善的聚醯亞胺膜。此時,上述聚醯胺膜的厚度可為8 μm至15 μm,較佳為可為10 μm至12 μm。In addition, the haze of the polyimide film may have a haze value of 2 or less, preferably 1 or less, or 0.9 or less, so that a polyimide film having improved transparency can be provided. At this time, the thickness of the polyamide film may be 8 μm to 15 μm, and preferably 10 μm to 12 μm.
再者,可為如下的無色透明的聚醯亞胺膜:於5 μm至30 μm的膜厚範圍內,380 nm至760 nm波長的光的透射度為80%以上,黃色度(YI)為約15以下、較佳為約10以下、更佳為約8以下。由於具有如上所述般優異的透光度及黃色度,因此可表現出得到明顯改善的透明度及光學特性。In addition, it may be a colorless and transparent polyimide film: within a film thickness range of 5 μm to 30 μm, the transmittance of light at a wavelength of 380 nm to 760 nm is 80% or more, and the yellowness (YI) is About 15 or less, preferably about 10 or less, and more preferably about 8 or less. Since it has excellent light transmittance and yellowness as described above, it can exhibit significantly improved transparency and optical characteristics.
再者,上述聚醯亞胺類膜的面內相位差值(Rin )可為約0 nm至100 nm,厚度方向的相位差值(Rth )為約1000 nm以下或0 nm至700 nm、較佳為0 nm至600 nm、更佳為0 nm至500 nm。於上述厚度方向的相位差的範圍內,可表現出適於顯示器的視感性,於厚度方向的相位差為1000 nm以上的情形時,在聚醯亞胺膜中產生相位差而光失真,因此視感性會明顯下降。In addition, the in-plane retardation value (R in ) of the polyfluorene-imide-based film may be about 0 nm to 100 nm, and the retardation value (R th ) in the thickness direction may be less than about 1000 nm or 0 nm to 700 nm. , Preferably 0 nm to 600 nm, and more preferably 0 nm to 500 nm. Within the range of the phase difference in the thickness direction, the visual sensitivity suitable for a display can be exhibited. When the phase difference in the thickness direction is 1000 nm or more, a phase difference occurs in the polyimide film and the light is distorted. Visual sensitivity will be significantly reduced.
再者,本發明的聚醯亞胺膜的玻璃轉換溫度(Tg)可為350℃以上,較佳為可為360℃以上、更佳為370℃以上。The glass transition temperature (Tg) of the polyfluoreneimide film of the present invention may be 350 ° C or higher, preferably 360 ° C or higher, and more preferably 370 ° C or higher.
再者,本發明的聚醯亞胺膜與溫度變化對應的熱穩定性可較優異,例如,於在100℃至400℃的溫度範圍內經由n+1次的加熱及冷卻製程後的熱膨脹係數可具有-10 ppm/℃至100 ppm/℃的值,較佳為可為-7 ppm/℃至90 ppm/℃、更佳為80 ppm/℃以下。Furthermore, the thermal stability of the polyimide film according to the present invention corresponding to temperature changes may be excellent, for example, the thermal expansion coefficient after n + 1 heating and cooling processes in a temperature range of 100 ° C to 400 ° C. It may have a value of -10 ppm / ° C to 100 ppm / ° C, preferably -7 ppm / ° C to 90 ppm / ° C, and more preferably 80 ppm / ° C or less.
於本發明的又一實施例中,提供一種包括上述聚醯亞胺共聚物的成形品(article)。In still another embodiment of the present invention, an article including the polyfluorene imine copolymer is provided.
上述成形品可為膜、纖維(fiber)、塗覆材料、接著材料等,但並不限定於此。上述成形品可使用上述共聚物與無機粒子的錯合物組成物而藉由乾濕法、乾式法、濕式法等形成,但並不限定於此。具體而言,上述成形品可如上所述般為光學膜,於此情形時,包括上述聚醯亞胺共聚物的組成物可藉由如下方式容易地製備:於利用旋轉塗覆等方法應用至基板上後,對其進行乾燥及硬化。The molded article may be a film, a fiber, a coating material, an adhesive material, and the like, but is not limited thereto. The molded article may be formed by a dry-wet method, a dry method, a wet method, or the like using the complex composition of the copolymer and inorganic particles, but is not limited thereto. Specifically, the molded article may be an optical film as described above. In this case, the composition including the polyfluorene imine copolymer can be easily prepared by applying it to a method such as spin coating, etc. After being on the substrate, it is dried and hardened.
本發明的聚醯亞胺可保持因堅固的結構實現的耐熱性、機械強度等特性,特別是,不僅可對會於高熱製程時產生的熱收縮行為表現出優異的耐熱性,而且可表現出優異的無色透明的特性,因此可使用於如元件用基板、顯示器用覆蓋基板、光學膜(optical film)、IC(integrated circuit)封裝體、黏合膜(adhesive film)、多層FPC(flexible printed circuit)、膠帶、觸控面板、光碟用保護膜等的各種領域。The polyimide of the present invention can maintain characteristics such as heat resistance, mechanical strength, and the like due to a strong structure. In particular, the polyimide not only exhibits excellent heat resistance against heat shrinkage behavior that may occur during a high-temperature process, but also exhibits Excellent colorless and transparent characteristics, so it can be used in, for example, element substrates, cover substrates for displays, optical films, integrated circuit (IC) packages, adhesive films, and multilayer FPC (flexible printed circuit) , Tape, touch panel, protective film for optical discs, etc.
根據本發明的又一實施例,提供一種包括上述成形品的顯示裝置。具體而言,上述顯示裝置可列舉液晶顯示裝置(liquid crystal display device,LCD)、有機發光二極體(organic light emitting diode,OLED)等,特別是可適於使用需要高溫製程的低溫多晶矽(low temperature polycrystalline silicon,LTPS)製程的OLED器件,但並不限定於此。According to still another embodiment of the present invention, a display device including the above-mentioned molded article is provided. Specifically, the display device may include a liquid crystal display device (LCD), an organic light emitting diode (OLED), and the like. In particular, the display device may be suitable for use of low-temperature polycrystalline silicon (low temperature) that requires a high-temperature process. temperature polycrystalline silicon (LTPS) process, but it is not limited to this.
以下,詳細地對本發明的實施例進行說明,以便在本發明所屬的技術領域內具有常識者可容易地實施。然而,本發明能夠以多種不同的形態實現,並不限定於此處所說明的實施例。Hereinafter, embodiments of the present invention will be described in detail so that a person having ordinary knowledge in the technical field to which the present invention pertains can easily implement. However, the present invention can be implemented in many different forms, and is not limited to the embodiments described herein.
<實施例1><Example 1>
於流通氮氣氣流的攪拌機內填充164 g的二甲基丙醯胺(dimethylpropanamide,DMPA)(分配係數為0.504),之後於將反應器的溫度保持為25℃的狀態下,在相同的溫度下添加0.0017 mol的兩封端胺基改質DMS-DPS(分子量為5000 g/mol)及0.0518 mol的2,2'-雙(三氟甲基)-4,4'-聯苯二胺(2,2'-bis(trifluoromethyl)benzidine,TFMB)而溶解。於相同的溫度下向添加有上述DMS-DPS及TFMB的溶液添加0.0321 mol的均苯四甲酸二酐(Pyromellitic Dianhydride,PMDA)及0.0214 mol的9,9'-雙(3,4-二羧基苯基)芴二酐(9,9'-bis(3,4-dicaroxyphenyl)fluorene dianhydride,BPAF)而攪拌3小時,之後於80℃下攪拌4小時來製備前驅物組成物。164 g of dimethylpropanamide (DMPA) (partition coefficient: 0.504) was filled in a stirrer flowing a nitrogen gas stream, and then the temperature of the reactor was maintained at 25 ° C, and then added at the same temperature. 0.0017 mol of two-terminated amine modified DMS-DPS (molecular weight 5000 g / mol) and 0.0518 mol of 2,2'-bis (trifluoromethyl) -4,4'-biphenyldiamine (2, 2'-bis (trifluoromethyl) benzidine (TFMB). At the same temperature, 0.0321 mol of Pyromellitic Dianhydride (PMDA) and 0.0214 mol of 9,9'-bis (3,4-dicarboxybenzene) were added to the solution to which the above DMS-DPS and TFMB were added. Base) fluorinated dianhydride (9,9'-bis (3,4-dicaroxyphenyl) fluorene dianhydride, BPAF) and stirred for 3 hours, and then stirred at 80 ° C for 4 hours to prepare a precursor composition.
於實施例1中所使用的DMS-DPS的NMR分析結果如圖2。於化學式1的DMS-DPS結構中,p=73.3,q=26.7。The NMR analysis results of DMS-DPS used in Example 1 are shown in FIG. 2. In the DMS-DPS structure of Chemical Formula 1, p = 73.3, q = 26.7.
<實施例2><Example 2>
於流通氮氣氣流的攪拌機內填充100 g的二乙基丙醯胺(diethylpropanamide,DEPA)(分配係數為1.275)作為溶劑,之後於將反應器的溫度保持為25℃的狀態下,在相同的溫度下添加0.0014 mol的兩封端胺基改質DMS-DPS(分子量為5000 g/mol)及0.0306 mol的TFMB(2,2'-bis(trifluoromethyl)benzidine)而溶解。於相同的溫度下向添加有上述DMS-DPS及TFMB的溶液添加0.03211 mol的PMDA(Pyromellitic Dianhydride)而攪拌3小時,之後於80℃下攪拌4小時。Fill 100 g of diethylpropanamide (DEPA) (partition coefficient: 1.275) as a solvent in a stirrer flowing a nitrogen gas stream, and then keep the temperature of the reactor at 25 ° C at the same temperature Next, 0.0014 mol of two capped amine modified DMS-DPS (molecular weight of 5000 g / mol) and 0.0306 mol of TFMB (2,2'-bis (trifluoromethyl) benzidine) were added to dissolve. At the same temperature, 0.03211 mol of PMDA (Pyromellitic Dianhydride) was added to the solution to which the above DMS-DPS and TFMB were added, followed by stirring for 3 hours, and then stirring at 80 ° C for 4 hours.
<比較例1>〈Comparative example 1〉
於流通氮氣氣流的攪拌機內填充96 g的N-甲基吡咯啶酮(N-Methylpyrrolidone,NMP)(分配係數為-0.28),之後於將反應器的溫度保持為25℃的狀態下,在相同的溫度下添加0.0017 mol的兩封端胺基改質DMS-DPS(Diphenylsiloxane-dimethylsiloxane共低聚物(co-oligomer),分子量為4400 g/mol,p=95.2,q=4.8)及0.0304 mol的TFMB(2,2'-bis(trifluoromethyl)benzidine)而溶解。於相同的溫度下向添加有上述DMS-DPS及TFMB的溶液添加0.0321 mol的PMDA(Pyromellitic Dianhydride)而攪拌3小時,之後於80℃下攪拌4小時。Fill a stirrer flowing nitrogen gas with 96 g of N-Methylpyrrolidone (NMP) (partition coefficient: -0.28), and then keep the temperature of the reactor at 25 ° C in the same state At the temperature of 0.0017 mol, two blocked amine modified DMS-DPS (Diphenylsiloxane-dimethylsiloxane co-oligomer) with a molecular weight of 4400 g / mol, p = 95.2, q = 4.8) and 0.0304 mol of TFMB (2,2'-bis (trifluoromethyl) benzidine). 0.0321 mol of PMDA (Pyromellitic Dianhydride) was added to the solution to which the above-mentioned DMS-DPS and TFMB were added at the same temperature, and the mixture was stirred for 3 hours, and then stirred at 80 ° C for 4 hours.
<比較例2>〈Comparative example 2〉
於流通氮氣氣流的攪拌機內填充137 g的NMP(分配係數為-0.28),之後於將反應器的溫度保持為25℃的狀態下,在相同的溫度下添加0.0014 mol的兩封端胺基改質DMS-DPS(分子量為5000 g/mol,p=50.8,q=49.2)及0.0306 mol的TFMB(2,2'-bis(trifluoromethyl)benzidine)而溶解。於相同的溫度下,向添加有上述DMS-DPS及TFMB的溶液添加0.03211 mol的PMDA(Pyromellitic Dianhydride)而攪拌3小時,之後於80℃下攪拌4小時。137 g of NMP (partition coefficient -0.28) was filled in a stirrer flowing a nitrogen gas stream, and then, while the temperature of the reactor was maintained at 25 ° C, 0.0014 mol of two-terminal amine groups were added at the same temperature. DMS-DPS (with a molecular weight of 5000 g / mol, p = 50.8, q = 49.2) and 0.0306 mol of TFMB (2,2'-bis (trifluoromethyl) benzidine). At the same temperature, 0.03211 mol of PMDA (Pyromellitic Dianhydride) was added to the solution to which the above-mentioned DMS-DPS and TFMB were added and stirred for 3 hours, and then stirred at 80 ° C for 4 hours.
<製備例>< Preparation example >
將於上述實施例1至實施例2及比較例1至比較例2中製備的聚醯亞胺共聚物以9.5 μm至11 μm的厚度旋轉塗覆至玻璃基板。將塗佈有聚醯亞胺共聚物的玻璃基板放入至烘箱而以2℃/min的速度進行加熱,於80℃下保持15分鐘、於150℃下保持30分鐘、於220℃下保持30分鐘、於400℃下保持1小時而進行硬化製程。於硬化製程結束後,將玻璃基板浸入至水中來剝離形成於玻璃基板上的膜,於烘箱內以100℃進行乾燥而製備聚醯亞胺膜。The polyimide copolymers prepared in the above-mentioned Examples 1 to 2 and Comparative Examples 1 to 2 were spin-coated on a glass substrate with a thickness of 9.5 μm to 11 μm. The glass substrate coated with the polyfluorene imide copolymer was placed in an oven and heated at a rate of 2 ° C / min, and was held at 80 ° C for 15 minutes, at 150 ° C for 30 minutes, and at 220 ° C for 30 minutes. The hardening process was performed by holding at 400 ° C. for 1 hour. After the hardening process was completed, the glass substrate was immersed in water to peel off the film formed on the glass substrate, and then dried in an oven at 100 ° C. to prepare a polyimide film.
對所製備的上述聚醯亞胺膜的黃色度(YI)、霧度、厚度方向的相位差、CTE、玻璃轉換溫度(Tg)及玻璃應力(彎曲(Bow))進行測定而示於表1。The yellowness (YI), haze, phase difference in the thickness direction, CTE, glass transition temperature (Tg), and glass stress (bow) of the prepared polyimide film were measured and shown in Table 1. .
<黃色度(YI)>< Yellowness (YI) >
利用Color Eye 7000A測定黃色度(YI)。Color Eye 7000A was used to measure the yellowness (YI).
<霧度(Haze)><Haze>
使用霧度計(Haze Meter)HM-150而藉由ASTM D1003的方法測定霧度。The haze was measured by a method of ASTM D1003 using a Haze Meter HM-150.
<厚度方向的相位差><Phase difference in thickness direction>
利用Axoscan測定厚度方向的相位差(Rth )。於將膜切割成固定的尺寸而測定厚度後,利用Axoscan測定相位差,為了補償相位差值而沿C-板(plate)方向修正而輸入測定到的厚度。The phase difference (R th ) in the thickness direction was measured by Axoscan. After the film was cut into a fixed size to measure the thickness, the phase difference was measured by Axoscan, and the measured thickness was inputted in a C-plate direction to compensate for the phase difference value.
<熱膨脹係數(CTE)及玻璃轉換溫度(Tg)>< Coefficient of thermal expansion (CTE) and glass transition temperature (Tg) >
於以5 mm×20 mm的尺寸準備上述膜後,利用配件裝載試樣。實際測定的膜的長度統一為16 mm。將拉伸膜的力設定為0.02 N,於100℃至350℃的溫度範圍內以5℃/min的升溫速度進行1次升溫製程,之後利用熱機械分析儀(Thermo Mechanical Analyzer,TMA)(TA公司的Q400)測定於350℃至100℃的溫度範圍內以4℃/min的冷卻速度進行冷卻(cooling)時的熱膨脹變化情況。After preparing the above-mentioned film in a size of 5 mm × 20 mm, a sample was loaded with an accessory. The actual measured film length was uniformly 16 mm. The tensile force of the stretched film was set to 0.02 N, and the temperature rising process was performed once at a temperature rising rate of 5 ° C / min in a temperature range of 100 ° C to 350 ° C, and then a Thermo Mechanical Analyzer (TMA) (TA The company's Q400) measures the change in thermal expansion when cooling is performed at a cooling rate of 4 ° C / min in a temperature range of 350 ° C to 100 ° C.
此時,以玻璃轉換溫度(Tg)表示於1次升溫製程中在升溫區間內表現出的反曲點。At this time, the glass transition temperature (Tg) is used to indicate the inflection point exhibited in the temperature increase interval during the primary temperature increase process.
<玻璃應力>< Glass stress >
玻璃應力表現為彎曲(Bow)值,測定方法如下。The glass stress is expressed as a bow value, and the measurement method is as follows.
將10 cm×10 cm的玻璃設置至應力測定儀(TENCOR公司的FLX2320),於利用雷射掃描中央後,在自除兩側1 cm以外的共8 cm的中心部分向左右兩側4 cm間的距離測定玻璃彎曲的程度(高度)偏差。A 10 cm × 10 cm glass was set to a stress tester (FLX2320 from Tencor Corporation), and after scanning the center with a laser, the center portion of a total of 8 cm except 1 cm on both sides was moved to the left and right sides by 4 cm. The distance (height) deviation of the glass is measured.
[表1]
根據表1可知,實施例1至實施例2的聚醯亞胺共聚物藉由使用DMS-DPS嵌段的莫耳比為73.3:26.7的DMS-DPS而無溶液白濁現象且膜的霧度特性提高。相反地,比較例1的DMS嵌段的比率較高而發生溶液白濁且膜的霧度亦不良。再者,可知於如比較例2般DPS嵌段的比率相對較高的情形時,表現出較高的殘餘應力。According to Table 1, it can be seen that the polyfluorene imine copolymers of Examples 1 to 2 use the DMS-DPS with a DMS-DPS block having a molar ratio of 73.3: 26.7 without solution turbidity and haze characteristics of the film improve. On the contrary, the ratio of the DMS block of Comparative Example 1 was high, the solution became cloudy, and the haze of the film was also poor. Furthermore, it can be seen that when the ratio of the DPS block is relatively high as in Comparative Example 2, a high residual stress is exhibited.
再者,可知實施例1及實施例2藉由使用分配係數(LogP)為正數且密度為1 g/cm3 以下的溶劑而光學特性與耐熱性較比較例1提高。Furthermore, it can be seen that the optical properties and heat resistance of Examples 1 and 2 are improved compared to Comparative Example 1 by using a solvent having a positive distribution coefficient (LogP) and a density of 1 g / cm 3 or less.
以上,詳細地對本發明內容的特定部分進行了記述,於業界具有常識者應瞭解,此種具體記述僅為較佳的實施方式,本發明的範圍並不限制於此。因此,本發明的實質性的範圍由隨附的發明申請專利範圍與其等效物界定。In the foregoing, specific parts of the content of the present invention have been described in detail. Those skilled in the art should understand that such specific descriptions are only preferred embodiments, and the scope of the present invention is not limited thereto. Therefore, the substantial scope of the present invention is defined by the scope of the accompanying invention application patent and its equivalent.
無no
圖1是用以對由本發明的前驅物組成物製備的共聚物的結構進行說明的示意圖。 圖2是實施例1中所使用的DMS-DPS低聚物的核磁共振(Nuclear Magnetic Resonance,NMR)分析結果。FIG. 1 is a schematic diagram for explaining a structure of a copolymer prepared from a precursor composition of the present invention. FIG. 2 is a nuclear magnetic resonance (NMR) analysis result of the DMS-DPS oligomer used in Example 1. FIG.
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WO2016140559A1 (en) * | 2015-03-05 | 2016-09-09 | 주식회사 엘지화학 | Composition for polyimide film for flexible substrate of optoelectronic device |
JP2017052877A (en) | 2015-09-09 | 2017-03-16 | 富士ゼロックス株式会社 | Polyimide precursor composition, manufacturing method of polyimide precursor composition and manufacturing method of polyimide molded body |
KR102580455B1 (en) | 2015-12-31 | 2023-09-20 | 주식회사 동진쎄미켐 | Polyimidepolymer composition, method for producing thereof and method for producing polyimide film using the same |
CN106674027B (en) * | 2016-12-30 | 2018-10-16 | 江苏创拓新材料有限公司 | Diamine compound, polyimides, optical thin film and preparation method thereof |
KR101840977B1 (en) * | 2017-09-14 | 2018-03-21 | 주식회사 엘지화학 | Polyimide precursor composition and polyimide film manufactured by using same |
EA202090618A1 (en) | 2017-10-30 | 2020-07-17 | Ниппон Сода Ко., Лтд. | COMPOSITION OF AGROCHEMICAL EMULSING CONCENTRATE |
-
2017
- 2017-09-14 KR KR1020170117989A patent/KR101840977B1/en active IP Right Grant
-
2018
- 2018-07-09 CN CN201880005211.0A patent/CN110121520B/en active Active
- 2018-07-09 JP JP2019531076A patent/JP6794610B2/en active Active
- 2018-07-09 EP EP18856647.5A patent/EP3536732A4/en active Pending
- 2018-07-09 US US16/474,766 patent/US11466124B2/en active Active
- 2018-07-09 WO PCT/KR2018/007733 patent/WO2019054612A1/en unknown
- 2018-08-28 TW TW107129854A patent/TWI677535B/en active
Also Published As
Publication number | Publication date |
---|---|
KR101840977B1 (en) | 2018-03-21 |
TWI677535B (en) | 2019-11-21 |
JP2020504198A (en) | 2020-02-06 |
WO2019054612A1 (en) | 2019-03-21 |
US11466124B2 (en) | 2022-10-11 |
JP6794610B2 (en) | 2020-12-02 |
CN110121520B (en) | 2021-10-08 |
US20190345288A1 (en) | 2019-11-14 |
EP3536732A1 (en) | 2019-09-11 |
CN110121520A (en) | 2019-08-13 |
EP3536732A4 (en) | 2020-04-15 |
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