TW201919855A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
TW201919855A
TW201919855A TW107133750A TW107133750A TW201919855A TW 201919855 A TW201919855 A TW 201919855A TW 107133750 A TW107133750 A TW 107133750A TW 107133750 A TW107133750 A TW 107133750A TW 201919855 A TW201919855 A TW 201919855A
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Taiwan
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light
emitting device
metal member
layer
emitting element
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TW107133750A
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Chinese (zh)
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TWI796363B (en
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加藤保夫
濱田裕一
濵田健作
赤石孝徳
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日商日亞化學工業股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Wire Bonding (AREA)
  • Led Devices (AREA)
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Abstract

A light-emitting device includes a light emitting element having a pad electrode, and a metal member connected to the pad electrode via a wire. The wire has a layered structure including at least a core material containing copper as a main component, an intermediate layer containing palladium as a main component, and a surface layer containing silver as a main component. The intermediate layer is arranged between the core material and the surface layer.

Description

發光裝置Light emitting device

本發明係關於一種發光裝置。The invention relates to a light emitting device.

作為將半導體發光元件(以下，亦簡稱為「發光元件」)之焊墊電極與封裝體之電極連接之導線，提出有將以Cu為主成分之導線芯材用反射率較高之物質塗覆而獲得之被覆導線(專利文獻1、2)。As a lead wire that connects a pad electrode of a semiconductor light emitting element (hereinafter, also simply referred to as a "light emitting element") and an electrode of a package, it has been proposed to coat a core material of a lead containing Cu as a main component with a substance having a high reflectance Then, a covered wire was obtained (Patent Documents 1 and 2).

但是，於專利文獻1中，雖然於導線芯材中使用Cu並且使用Ag能夠提高光提取效率，但是芯材之Cu容易於表層之Ag中進行熱擴散。另外，於專利文獻2中，提出有一種覆Cu導線，其芯材包含Cu，中間層包含Pd，表層包含Ag。
[先前技術文獻]
[專利文獻]However, in Patent Document 1, although Cu is used in the core material of the lead wire and Ag is used to improve the light extraction efficiency, Cu in the core material is likely to be thermally diffused in Ag in the surface layer. In addition, in Patent Document 2, a Cu-coated wire is proposed in which a core material includes Cu, an intermediate layer includes Pd, and a surface layer includes Ag.
[Prior technical literature]
[Patent Literature]

[專利文獻1]日本專利特開2007-80990號公報
[專利文獻2]日本專利特開2012-039079號公報[Patent Document 1] Japanese Patent Laid-Open No. 2007-80990
[Patent Document 2] Japanese Patent Laid-Open No. 2012-039079

[發明所欲解決之問題][Problems to be solved by the invention]

對於上述之被覆導線，於長時間使用時，光提取效率容易下降。
[解決問題之技術手段]For the covered wire described above, the light extraction efficiency tends to decrease when used for a long time.
[Technical means to solve the problem]

本發明包含以下之構成。
一種發光裝置，其具備：發光元件，其具備焊墊電極；以及金屬構件，其經由導線與焊墊電極連接，該導線具有：以Cu為主成分之芯材、以Pd為主成分之中間層及以Ag為主成分之表層。
[發明之效果]The present invention includes the following constitutions.
A light-emitting device includes: a light-emitting element including a pad electrode; and a metal member connected to the pad electrode via a wire. The wire includes a core material mainly composed of Cu and an intermediate layer mainly composed of Pd. And the surface layer with Ag as the main component.
[Effect of the invention]

根據以上構成，能夠獲得一種發光裝置，其於使發光裝置長時間驅動之情形時，光提取效率不容易下降。According to the above configuration, it is possible to obtain a light emitting device that does not easily reduce light extraction efficiency when the light emitting device is driven for a long time.

以下一面參照附圖，一面詳細說明用於實施本發明之形態。然而，以下示出之形態係對用於將本發明之技術思想具體化之發光裝置進行例示者，而並非將本發明限定為以下內容。另外，關於實施形態中所記載之構成構件之尺寸、材質、形狀、其相對配置等，除非有特別說明，否則並非意在將本發明之範圍限定於此，而僅為示例。再者，為了明確說明，有時對於各附圖所示之構件之大小、或位置關係等進行了放大。Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. However, the forms shown below are examples of a light-emitting device for embodying the technical idea of the present invention, and do not limit the present invention to the following. In addition, the dimensions, materials, shapes, and relative arrangement of the constituent members described in the embodiments are not intended to limit the scope of the present invention to these, but are merely examples, unless otherwise specified. Furthermore, in order to clarify the description, the size, positional relationship, and the like of the members shown in the drawings may be exaggerated.

於圖1A及1B中表示實施形態1之發光裝置100。再者，圖1A省略密封構件。發光裝置100具備：封裝體10；發光元件3，其載置於封裝體10；以及導線1。封裝體10具備：金屬構件2，其作為一對正負電極而發揮作用；以及樹脂成形體4，其將金屬構件2一體地保持。發光元件3具備：半導體之積層結構體32，其包含發光層；以及焊墊電極31，其形成於積層結構體32之上表面。導線1將金屬構件2及焊墊電極31連接。金屬構件2作為載置有發光元件3之載置構件而發揮作用。另外，金屬構件2作為用於經由導線1而使發光元件3通電之一對正負電極而發揮作用。A light emitting device 100 according to the first embodiment is shown in FIGS. 1A and 1B. In addition, FIG. 1A omits the sealing member. The light-emitting device 100 includes a package 10, a light-emitting element 3 mounted on the package 10, and a lead 1. The package 10 includes a metal member 2 that functions as a pair of positive and negative electrodes, and a resin molded body 4 that integrally holds the metal member 2. The light-emitting element 3 includes a semiconductor multilayer structure 32 including a light-emitting layer, and a pad electrode 31 formed on an upper surface of the multilayer structure 32. The lead 1 connects the metal member 2 and the pad electrode 31. The metal member 2 functions as a mounting member on which the light emitting element 3 is mounted. In addition, the metal member 2 functions as a positive electrode and a negative electrode as one of the currents for energizing the light emitting element 3 through the lead wire 1.

本實施形態之導線1如圖2之概略截面圖所示，包含：以Cu為主成分之芯材11；以Pd為主成分之中間層12；以及以Ag為主成分之表層13。該以Cu為主成分之芯材11之直徑例如為10 μm～30 μm。另外，該以Pd為主成分之中間層12之厚度例如為30 nm以上且100 nm以下。進而，該以Ag為主成分之表層13之厚度例如為40 nm以上且300 nm以下。As shown in the schematic cross-sectional view of FIG. 2, the lead wire 1 of this embodiment includes: a core material 11 mainly composed of Cu; an intermediate layer 12 mainly composed of Pd; and a surface layer 13 mainly composed of Ag. The diameter of the core material 11 mainly containing Cu is, for example, 10 μm to 30 μm. The thickness of the intermediate layer 12 containing Pd as a main component is, for example, 30 nm or more and 100 nm or less. Further, the thickness of the surface layer 13 mainly composed of Ag is, for example, 40 nm or more and 300 nm or less.

(導線1)
導線1將金屬構件2及發光元件3之焊墊電極31電氣連接。利用圖2對導線1進行說明。本實施形態之導線1具備之積層結構至少含有：以Cu為主成分之芯材11；塗覆於其表面之以Pd為主成分之中間層12；以及進而塗覆於該中間層12表面之以Ag為主成分之表層13。(Wire 1)
The lead wire 1 electrically connects the metal member 2 and the pad electrode 31 of the light emitting element 3. The lead 1 will be described using FIG. 2. The laminated structure of the lead wire 1 in this embodiment includes at least: a core material 11 mainly composed of Cu; an intermediate layer 12 mainly composed of Pd coated on the surface thereof; and further, an intermediate layer 12 coated on the surface of the intermediate layer 12. The surface layer 13 having Ag as a main component.

芯材11以Cu為主成分，並且，較佳為含有Cu至少95%以上，更佳為含有Cu至少97%以上。芯材11亦可根據接合性、形成球之容易性、適當之伸長率、適當之環形狀、適當之硬度等生產性、或發光裝置100之形狀等而適當地添加Au、Ag、Zn、Sn、V、B、Ti、Mg、P、S等添加劑或合金金屬。芯材11之直徑可根據發光裝置100之形狀、或輸出等而適當選擇。芯材11之直徑例如較佳為10 μm以上且30 μm以下。The core material 11 contains Cu as a main component, and preferably contains Cu at least 95% or more, and more preferably contains Cu at least 97% or more. The core material 11 may be appropriately added with Au, Ag, Zn, Sn, etc. in accordance with productivity, such as bonding properties, ease of forming a ball, appropriate elongation, suitable ring shape, appropriate hardness, or the shape of the light emitting device 100. , V, B, Ti, Mg, P, S and other additives or alloy metals. The diameter of the core material 11 can be appropriately selected according to the shape, output, or the like of the light emitting device 100. The diameter of the core material 11 is preferably, for example, 10 μm or more and 30 μm or less.

中間層較佳為含有選自Cu、Te、Ge、Se、Au、Ag中之至少一種以上。中間層12較佳為以Pd為主成分，較佳為含有Pd為90%以上，更佳為含有Pd為95%以上。中間層12亦可根據耐熱性、耐腐蝕性、耐氧化性、密接性、形成球之容易性、適當之伸長率、適當之環形狀、適當之硬度等生產性、或發光裝置100之形狀等而適當添加添加劑或合金金屬。中間層12例如亦可微量地含有Se、Ge、Bi、Te等，並且藉此可期待提高耐熱性。於利用電鍍法製作Pd中間層之情形時，亦可使用於所使用之鍍液中添加該等添加劑後之鍍液。The intermediate layer preferably contains at least one selected from Cu, Te, Ge, Se, Au, and Ag. The intermediate layer 12 preferably contains Pd as a main component, preferably contains 90% or more of Pd, and more preferably contains 95% or more of Pd. The intermediate layer 12 may also be produced according to heat resistance, corrosion resistance, oxidation resistance, adhesion, easiness of ball formation, appropriate elongation, appropriate ring shape, appropriate hardness, etc., or the shape of the light-emitting device 100. Instead, additives or alloy metals are appropriately added. The intermediate layer 12 may contain, for example, Se, Ge, Bi, Te, etc. in a trace amount, and thereby it is expected to improve heat resistance. When the Pd intermediate layer is produced by the electroplating method, a plating solution obtained by adding these additives to the plating solution used may also be used.

表層較佳為含有選自Pd、Au、Se、S、C、N、O中之至少一種以上。以Ag為主成分之表層13特別較佳為除了不可避免之雜質以外不含雜質之純度較高的Ag。表層13亦可為了提高耐熱性、或光反射率而含有Se、S等微量添加劑。於利用電鍍法製作以Ag為主成分之表層13之情形時，亦可使用於所使用之Ag鍍液中作為添加劑而適當地添加Se化合物、S化合物後之鍍液。The surface layer preferably contains at least one selected from the group consisting of Pd, Au, Se, S, C, N, and O. The surface layer 13 mainly composed of Ag is particularly preferably Ag having a high purity and containing no impurities other than unavoidable impurities. The surface layer 13 may contain trace additives such as Se and S in order to improve heat resistance or light reflectance. When the surface layer 13 containing Ag as a main component is produced by the electroplating method, a plating solution in which a Se compound and an S compound are appropriately added as an additive may be used in the Ag plating solution used.

作為製造導線1之方法，首先，準備直徑比作為目標之導線之直徑更大之芯材11，於形成比作為目標之中間層及表層更厚之鍍層之後，實施伸線加工。再者，對於芯材、中間層、表層、導線，於伸線加工之前後，各構件使用相同名稱進行說明。As a method for manufacturing the lead wire 1, first, a core material 11 having a diameter larger than that of the target lead wire is prepared. After forming a thicker plating layer than the target intermediate layer and the surface layer, wire drawing is performed. In addition, for the core material, the intermediate layer, the surface layer, and the lead wire, before and after the wire drawing process, each member is described using the same name.

對捲繞成線圈狀之通常直徑為2 mm-6 mm之以Cu為主成分之芯材11，利用電鍍法，首先，以數μm左右之厚度鍍敷作為中間層12之Pd鍍層，然後，同樣地以數μm左右之厚度鍍敷作為表層13之Ag鍍層。對如此製作之直徑數mm之導線，一面進行熱處理，一面穿過適當孔形狀之伸線模，反覆進行數個階段伸線加工，例如能夠製作直徑10 μm～30 μm之導線。於伸線加工前之鍍敷步驟中形成之Pd或Ag之鍍層厚度較佳為根據其後之伸線加工之程度進行調整。由於如此一面加熱一面進行伸線加工，從而於芯材11與中間層12與表層13之界面附近彼此進行熱擴散，因此，進行某種程度之合金化。合金化之程度較佳為藉由調整熱處理之溫度、或時間等條件來調整導線1之各種特性。For the core material 11 with Cu as a main component, which is usually wound in a coil shape and has a diameter of 2 mm to 6 mm, firstly, a Pd plating layer having a thickness of about several μm is used as the Pd plating layer of the intermediate layer 12, and then, Similarly, the Ag plating layer of the surface layer 13 is plated with a thickness of about several μm. The wire having a diameter of several millimeters thus produced can be subjected to heat treatment and passed through a wire drawing die with an appropriate hole shape, and can be repeatedly drawn in several stages. For example, a wire having a diameter of 10 μm to 30 μm can be produced. The thickness of the Pd or Ag plating layer formed in the plating step before the wire drawing process is preferably adjusted according to the degree of the subsequent wire drawing process. Since the wire is drawn while being heated in this way, heat is diffused from each other in the vicinity of the interface between the core material 11 and the intermediate layer 12 and the surface layer 13. Therefore, alloying is performed to some extent. The degree of alloying is preferably to adjust various characteristics of the lead wire 1 by adjusting conditions such as temperature or time of heat treatment.

再者，作為導線1，使用直徑25 μm之以Cu為主成分之芯材11，利用電鍍法分別鍍敷含有Pd之中間層12及含有Ag之表層13，不進行伸線加工亦能夠製作期望之導線1。In addition, as the lead wire 1, a core material 11 containing Cu as a main component having a diameter of 25 μm is used, and the intermediate layer 12 containing Pd and the surface layer 13 containing Ag are plated by electroplating, respectively. Of the wire 1.

(封裝體10)
本實施形態之發光裝置100具有至少具備金屬構件2之封裝體10。該封裝體10可具備：金屬構件2及絕緣性之基體4。(Package 10)
The light emitting device 100 according to this embodiment includes a package 10 including at least a metal member 2. The package 10 may include a metal member 2 and an insulating substrate 4.

封裝體10例如於俯視時外周形狀為方形，而且，具有於上表面具備開口部之凹部。凹部之於例如底面露出有金屬構件2之開口部之俯視形狀為四邊形。於封裝體10之下表面，一對金屬構件2之一部分作為外部端子部而露出。封裝體10之俯視形狀除了四邊形之外形以外，可為長方形、多邊形以及將該等組合後之形狀。於發光裝置100之封裝體10具有凹部之情形時，凹部之側壁部之內側面除了如圖1B所示之以相對於底面傾斜之角度設置以外，可為大致垂直之角度，亦可於該內側面具有階梯面。另外，對於壁部之高度、或開口部之形狀等，亦可根據目的、或用途等而適當選擇。較佳為於凹部之內部設置金屬構件2，除了本實施形態般於底面部以外，亦可於側壁部具備金屬構件。The package 10 has, for example, a square outer peripheral shape in plan view, and has a recessed portion having an opening portion on an upper surface. The recessed portion has, for example, a quadrangular planar shape in a plan view in which an opening portion of the metal member 2 is exposed on the bottom surface. On the lower surface of the package body 10, a part of the pair of metal members 2 is exposed as an external terminal portion. In addition to the quadrangle shape, the plan view of the package body 10 may be rectangular, polygonal, or a combination of these shapes. In the case where the package 10 of the light emitting device 100 has a recessed portion, the inner side surface of the side wall portion of the recessed portion may be a substantially vertical angle except that it is set at an angle inclined with respect to the bottom surface as shown in FIG. 1B. The side surface has a stepped surface. In addition, the height of the wall portion, the shape of the opening portion, and the like can be appropriately selected according to the purpose, use, and the like. It is preferable that the metal member 2 is provided inside the recessed portion. In addition to the bottom surface portion as in this embodiment, a metal member may be provided on the side wall portion.

(金屬構件2)
金屬構件2能夠作為對來自發光元件3之光之反射較高之光反射構件而發揮作用。例如，金屬構件2之表面具有含Au或Ag層並且以將來自發光元件3或後述之波長轉換構件之發光高效地反射之方式設置於發光裝置100。(Metal member 2)
The metal member 2 can function as a light reflecting member that has high reflection of light from the light emitting element 3. For example, the surface of the metal member 2 has an Au or Ag-containing layer and is provided on the light-emitting device 100 so as to efficiently reflect light emitted from the light-emitting element 3 or a wavelength conversion member described later.

於將金屬構件2用作光反射構件之情形時，只要能夠對自發光元件3射出之光進行反射，則可以任何形式用於發光裝置100中。例如，如圖1A等所示，可配置於發光元件3之下方，亦可設置成環繞發光元件3之反射器形狀。另外，金屬構件2可為如圖1A等所示之板狀之引線框架，亦可為形成於絕緣性之基體上之配線。另外，金屬構件2亦可兼具作為載置發光元件3之載置構件、進行放熱之放熱構件、與發光元件3電氣連接之金屬構件之功能。因此，金屬構件2與該功能對應地，較佳為放熱性、導電性、接合性(Bondability)優異。When the metal member 2 is used as a light reflecting member, it can be used in the light emitting device 100 in any form as long as the light emitted from the light emitting element 3 can be reflected. For example, as shown in FIG. 1A and the like, the light emitting element 3 may be disposed below the light emitting element 3 or may be provided in a reflector shape surrounding the light emitting element 3. In addition, the metal member 2 may be a plate-shaped lead frame as shown in FIG. 1A or the like, or may be a wiring formed on an insulating substrate. In addition, the metal member 2 may also function as a mounting member on which the light-emitting element 3 is placed, a heat-radiating member that radiates heat, and a metal member that is electrically connected to the light-emitting element 3. Therefore, it is preferable that the metal member 2 is excellent in heat dissipation, electrical conductivity, and bondability according to this function.

金屬構件2之表面對可見光區域之波長之光的反射率為70%以上，特別較佳為80%以上之反射率。藉此，能夠提高光提取效率。另外，較佳為高光澤，光澤度為0.5以上，更佳為1.0以上，進而較佳為1.6以上。此處示出之光澤度係使用日本電色工業製之微小面積色差計VSR 300A，以45°照射、垂直接收光獲得之數字。金屬構件較佳為表面含有選自Ag、Au、Pd、Rh、Pt中之至少一種以上。金屬構件之表面特別較佳為含Au或Ag層。The reflectance of the surface of the metal member 2 to light with a wavelength in the visible light region is 70% or more, and particularly preferably 80% or more. Thereby, light extraction efficiency can be improved. In addition, high gloss is preferable, and the gloss is 0.5 or more, more preferably 1.0 or more, and even more preferably 1.6 or more. The gloss shown here is a figure obtained by using a micro-area color difference meter VSR 300A manufactured by Nippon Denshoku Industries to irradiate at 45 ° and receive light vertically. The metal member preferably has at least one selected from the group consisting of Ag, Au, Pd, Rh, and Pt on its surface. The surface of the metal member is particularly preferably an Au- or Ag-containing layer.

金屬構件2之含Au或Ag層可設置於金屬構件2之所有表面，或者可設置於金屬構件2之部分表面。即，於金屬構件2之表面之至少一部分具有含Au或Ag層即可。例如，對於圖1A、圖1B中示出之發光裝置100，較佳為金屬構件2於凹部之底面露出，並且如此於金屬構件2之被來自發光元件3之光照射之部分之表面設置反射率較高之含Ag層。另外，於金屬構件2中，對於埋設於基體4之側壁部內部之埋設部、或露出於基體4之外部之外部端子部、於發光裝置100之下表面側露出之安裝部，亦可於其表面不設置含Au或Ag層。於如此於金屬構件2之一部分設置含Au或Ag層之情形時，可藉由於成膜時用抗蝕劑、或保護膠帶等對未形成含Au或Ag層之部分以掩膜方式進行保護等來進行。The Au or Ag-containing layer of the metal member 2 may be disposed on all surfaces of the metal member 2 or may be disposed on a part of the surface of the metal member 2. That is, it is sufficient to have an Au or Ag-containing layer on at least a part of the surface of the metal member 2. For example, for the light-emitting device 100 shown in FIGS. 1A and 1B, it is preferable that the metal member 2 is exposed on the bottom surface of the recessed portion, and the reflectance is set on the surface of the portion of the metal member 2 that is illuminated by light from the light-emitting element 3. Higher Ag-containing layer. In addition, in the metal member 2, a buried portion buried inside the side wall portion of the base body 4, or an external terminal portion exposed outside the base body 4, and a mounting portion exposed on the lower surface side of the light emitting device 100 may also be provided thereon. No Au or Ag containing layer is provided on the surface. In the case where an Au or Ag-containing layer is provided on a part of the metal member 2 as described above, the portion where the Au or Ag-containing layer is not formed can be protected by a mask, etc., by using a resist or a protective tape during film formation. Come on.

金屬構件2之含Au或Ag層可於整個區域為同等厚度，或者亦可厚度不同。藉由部分地減少含Au或Ag層之厚度，從而能夠降低成本。例如，能夠將含Au或Ag層設置於金屬構件2之上表面與下表面，並且使一面之厚度比另一面更厚。就提高光提取效率之觀點而言，較佳為於載置有發光元件3之金屬構件2之上表面、或發光元件3之附近之部分設置厚度較厚之含Au或Ag層。由於在金屬構件之下表面不設置反射率較高之含Au或Ag層，因此能夠減少Au或Ag等材料之量，能夠獲得降低成本之金屬構件2。The Au or Ag-containing layer of the metal member 2 may have the same thickness over the entire area, or may have different thicknesses. By partially reducing the thickness of the Au or Ag-containing layer, the cost can be reduced. For example, the Au or Ag-containing layer can be provided on the upper surface and the lower surface of the metal member 2 and the thickness of one surface can be made thicker than the other surface. From the viewpoint of improving the light extraction efficiency, it is preferable to provide a thicker Au or Ag-containing layer on the upper surface of the metal member 2 on which the light emitting element 3 is placed, or a portion near the light emitting element 3. Since no Au or Ag-containing layer having a higher reflectance is not provided on the lower surface of the metal member, the amount of materials such as Au or Ag can be reduced, and a metal member 2 with reduced cost can be obtained.

為了於金屬構件2之表面形成含Au或Ag層，就大規模生產之觀點而言，較佳為鍍敷法。特別是，於藉由電解電鍍形成時，根據需要，可藉由併用Se系光澤劑、Sb系光澤劑、S系光澤劑、Ti添加劑、Pb添加劑、As光澤劑、有機系光澤劑等光澤劑、或添加劑來提高光澤度。藉此，能夠獲得具有高光澤度並且耐腐蝕性亦優異之金屬構件2。In order to form an Au or Ag-containing layer on the surface of the metal member 2, a plating method is preferred from the viewpoint of mass production. In particular, when it is formed by electrolytic plating, if necessary, a glossing agent such as Se-based glossing agent, Sb-based glossing agent, S-based glossing agent, Ti additive, Pb additive, As glossing agent, and organic glossing agent can be used in combination , Or additives to increase gloss. Thereby, it is possible to obtain the metal member 2 having high gloss and excellent corrosion resistance.

另外，為了提高金屬構件2之光反射率，母材之平整度較佳為儘可能高。例如，表面粗糙度Ra較佳為0.5 μm以下。藉此，能夠提高設置於母材上之含Au或Ag層之平坦度，並且能夠良好地提高金屬構件2之光反射率。母材之平整度能夠藉由進行壓延處理、物理研磨、化學研磨等處理來提高。In addition, in order to improve the light reflectance of the metal member 2, the flatness of the base material is preferably as high as possible. For example, the surface roughness Ra is preferably 0.5 μm or less. Thereby, the flatness of the Au or Ag-containing layer provided on the base material can be improved, and the light reflectance of the metal member 2 can be improved. The flatness of the base material can be improved by processing such as calendaring, physical polishing, and chemical polishing.

(基體)
發光裝置100之封裝體10具備基體4。基體4係以將一對金屬構件2一體地保持之樹脂作為基材之構件。(Substrate)
The package 10 of the light emitting device 100 includes a base 4. The base 4 is a member made of a resin in which a pair of metal members 2 are integrally held as a base material.

作為基體4，可使用熱硬化性樹脂、熱塑性樹脂，特別較佳為使用熱硬化性樹脂。作為熱硬化性樹脂，較佳為玻璃透過性比後述之密封構件6中使用之樹脂更低之樹脂，具體而言，可列舉：環氧樹脂組合物、矽酮樹脂組合物、矽酮改性環氧樹脂等改性環氧樹脂組合物、環氧改性矽酮樹脂等改性矽酮樹脂組合物、聚醯亞胺樹脂組合物、改性聚醯亞胺樹脂組合物、胺基甲酸酯樹脂、改性胺基甲酸酯樹脂組合物等。藉由於此種基體4之基材混入作為填充材料(填料)之TiO2 、SiO2 、Al2 O3 、MgO、MgCO3 、CaCO3 、Mg(OH)2 、Ca(OH)2 等微粒等，來調整光之透過率，從而反射來自發光元件之光之約60%以上，更佳為反射約90%。As the substrate 4, a thermosetting resin or a thermoplastic resin can be used, and a thermosetting resin is particularly preferably used. As the thermosetting resin, a resin having a lower glass permeability than the resin used in the sealing member 6 described later is preferable, and specifically, epoxy resin composition, silicone resin composition, and silicone modification are listed. Modified epoxy resin composition such as epoxy resin, modified silicone resin composition such as epoxy modified silicone resin, polyimide resin composition, modified polyimide resin composition, amino formic acid Ester resin, modified urethane resin composition, and the like. As the base material of the base 4 is mixed with particles such as TiO 2 , SiO 2 , Al 2 O 3 , MgO, MgCO 3 , CaCO 3 , Mg (OH) 2 , Ca (OH) 2 and the like as a filler (filler). To adjust the light transmittance, so as to reflect more than about 60% of the light from the light emitting element, and more preferably about 90%.

再者，基體4不限於將如上述般之樹脂作為基材，亦可由陶瓷、玻璃、或金屬等無機物形成。藉此，能夠獲得劣化等較少、可靠性較高之發光裝置100。In addition, the base 4 is not limited to the resin as described above as a base material, and may be formed of an inorganic substance such as ceramic, glass, or metal. This makes it possible to obtain a light-emitting device 100 with less deterioration and the like and higher reliability.

(發光元件3)
發光元件3如例如圖1A所示，能夠載置於在封裝體10凹部之底面露出之金屬構件2上。發光元件3較佳為安裝於反射率及/或光澤度較高之金屬構件2上。藉此，能夠提高發光裝置100之光提取效率。(Light emitting element 3)
The light emitting element 3 can be placed on the metal member 2 exposed on the bottom surface of the concave portion of the package 10 as shown in FIG. 1A, for example. The light emitting element 3 is preferably mounted on a metal member 2 having a high reflectance and / or glossiness. Thereby, the light extraction efficiency of the light emitting device 100 can be improved.

發光元件3能夠選擇任意波長之半導體發光元件。發光元件3具有：積層結構體32，其具有含發光層等之半導體層；以及焊墊電極31。作為積層結構體32，例如，可使用InGaN、GaN、AlGaN等氮化物系半導體、或GaP作為發藍色、綠色光之發光元件3。另外，作為紅色之發光元件，積層結構體32可使用GaAlAs、AlInGaP等。進而，亦可使用包含除此以外之材料之發光元件3。所使用之發光元件3之組成、發光色、大小、或個數等可根據目的適當選擇。The light-emitting element 3 can select a semiconductor light-emitting element having an arbitrary wavelength. The light-emitting element 3 includes a laminated structure 32 having a semiconductor layer including a light-emitting layer and the like, and a pad electrode 31. As the multilayer structure 32, for example, a nitride-based semiconductor such as InGaN, GaN, or AlGaN, or GaP can be used as the light-emitting element 3 that emits blue or green light. In addition, as the red light emitting element, GaAlAs, AlInGaP, or the like can be used as the multilayer structure 32. Furthermore, a light-emitting element 3 containing other materials may be used. The composition, emission color, size, or number of the light-emitting elements 3 to be used can be appropriately selected according to the purpose.

於發光裝置100具有波長轉換構件之情形時，作為發光元件3之積層結構體32，較佳為可列舉可發出能夠高效地激發該波長轉換構件之短波長之光之氮化物半導體。發光元件3之積層結構體32能夠根據半導體層之材料、或其混晶比而選擇各種各樣之發光波長。另外，能夠作為不僅輸出可見光區域之光亦輸出紫外線、或紅外線之發光元件3。When the light-emitting device 100 includes a wavelength conversion member, the laminated structure 32 of the light-emitting element 3 is preferably a nitride semiconductor that can emit light of a short wavelength that can efficiently excite the wavelength conversion member. The laminated structure 32 of the light emitting element 3 can select various light emitting wavelengths according to the material of the semiconductor layer or its mixed crystal ratio. In addition, it can be used as a light-emitting element 3 that outputs not only light in the visible light region but also ultraviolet or infrared rays.

發光元件3具有與金屬構件2電氣連接之正負焊墊電極31。該等正負電極可設置於一面側，亦可設置於發光元件3之上下兩面。焊墊電極較佳為表面含有選自Al、Pd、Pt、Rh、Ru中之至少一種以上。作為導電構件而發揮作用之金屬構件2與發光元件3之連接可僅為導線1，或者除導線1以外，亦可以使用作為後述之接合構件5之導電性之接合構件5進行連接。The light emitting element 3 includes a positive and negative pad electrode 31 electrically connected to the metal member 2. The positive and negative electrodes may be disposed on one surface side, or may be disposed on both surfaces above and below the light emitting element 3. The pad electrode preferably has at least one selected from the group consisting of Al, Pd, Pt, Rh, and Ru on its surface. The connection between the metal member 2 and the light-emitting element 3 functioning as a conductive member may be only the lead wire 1, or in addition to the lead wire 1, a conductive bonding member 5 that is a bonding member 5 described later may be used for the connection.

於具備複數個發光元件3之情形時，發光元件3之焊墊電極31之間亦可用導線1連接。另外，於具備複數個發光元件3之情形時，如圖1A及1B所示，亦可設置為對每個發光元件3連接引線。When a plurality of light-emitting elements 3 are provided, the pad electrodes 31 of the light-emitting elements 3 may be connected by a wire 1. When a plurality of light-emitting elements 3 are provided, as shown in FIGS. 1A and 1B, a lead may be connected to each light-emitting element 3.

(接合構件5)
接合構件5係將發光元件3固定並安裝於封裝體10之構件。對於較佳之材料，作為導電性之接合構件5，可使用銀、金、鈀等導電性焊劑；或Au-Sn、Sn-Ag-Cu等共晶焊料材料；低熔點金屬等釺材；使用Cu、Ag、Au粒子、或皮膜之同種材料間之接合等。作為絕緣性之接合構件5，可使用環氧樹脂組合物、矽酮樹脂組合物、聚醯亞胺樹脂組合物、或其改性樹脂、混合樹脂等。於使用該等樹脂之情形時，考慮到來自發光元件3之光、或熱導致之劣化，能夠於發光元件3之安裝面設置Al膜、或Ag膜等反射率較高之金屬層、或介電反射膜。(Joining member 5)
The bonding member 5 is a member that fixes and attaches the light emitting element 3 to the package 10. For the preferred material, as the conductive bonding member 5, conductive solders such as silver, gold, palladium, or eutectic solder materials such as Au-Sn, Sn-Ag-Cu, etc .; low-melting metals, and other metal materials; Cu can be used. , Ag, Au particles, or the bonding of the same material of the film. As the insulating bonding member 5, an epoxy resin composition, a silicone resin composition, a polyimide resin composition, a modified resin thereof, a mixed resin, or the like can be used. In the case of using these resins, in consideration of light or heat degradation from the light emitting element 3, a metal layer having a high reflectance such as an Al film or an Ag film, or a dielectric layer can be provided on the mounting surface of the light emitting element 3. Electro-reflective film.

(密封構件6)
發光裝置100亦可具備密封構件6。藉由以被覆發光元件3、金屬構件2、導線1、或後述之保護膜等構件之方式設置密封構件6，從而能夠保護被覆之構件避免遭受塵埃、或水分以及外力等之破壞，能夠提高發光裝置100之可靠性。特別是，藉由於形成有保護膜之後將密封構件6設置於保護膜上，從而能夠保護保護膜，因此可靠性提高，故而較佳。(Sealing member 6)
The light emitting device 100 may include the sealing member 6. By providing the sealing member 6 so as to cover the light-emitting element 3, the metal member 2, the lead wire 1, or a protective film to be described later, the covered member can be protected from damage by dust, moisture, and external force, and light emission can be improved. Reliability of the device 100. In particular, since the sealing member 6 is provided on the protective film after the protective film is formed, the protective film can be protected, so the reliability is improved, which is preferable.

密封構件6較佳為具有能夠使來自發光元件3之光透過之透光性，並且，具有不易因光而劣化之耐光性。作為具體之材料，可列舉：矽酮樹脂組合物、改性矽酮樹脂組合物、改性環氧樹脂組合物、氟樹脂組合物等具有能夠使來自發光元件之光透過之透光性之絕緣樹脂組合物。特別是，亦可使用含有二甲基矽酮、苯基含量較少之苯基矽酮、氟系矽酮樹脂等具有矽氧烷骨架作為基礎之樹脂中之至少一種之混合樹脂等。The sealing member 6 preferably has a light-transmitting property capable of transmitting light from the light-emitting element 3 and a light resistance that is not easily deteriorated by light. Specific materials include a silicone resin composition, a modified silicone resin composition, a modified epoxy resin composition, a fluororesin composition, and the like that have a light-transmitting insulation capable of transmitting light from a light-emitting element. Resin composition. In particular, a mixed resin containing at least one of a resin having a siloxane skeleton as a base such as dimethyl silicone, phenyl silicone having a small phenyl content, and a fluorine-based silicone resin may be used.

對於密封構件6之形成方法，於密封構件6為樹脂之情形時，可使用灌封(滴加)法、壓縮成型法、印刷法、傳遞模塑法、噴射分配法、噴塗等。若為如圖1A及1B所示之具有凹部之封裝體10之情形時，則較佳為灌封法，於使用平板狀之封裝體之情形時，較佳為壓縮成型法、或傳遞模塑法。As for the method of forming the sealing member 6, when the sealing member 6 is a resin, a potting (dropping) method, a compression molding method, a printing method, a transfer molding method, a spray distribution method, a spray coating method, or the like can be used. In the case of the package 10 having a recessed portion as shown in FIGS. 1A and 1B, the potting method is preferred, and in the case of using a flat package, the compression molding method or transfer molding is preferred. law.

密封構件6如圖1B所示，能夠設置為填充於基體4之凹部內。As shown in FIG. 1B, the sealing member 6 can be provided to fill the recessed portion of the base 4.

對於密封構件6之外表面之形狀，可根據發光裝置100所需要之配光特性等而進行各種各樣之選擇。例如，藉由使上表面為凸透鏡形狀、凹透鏡形狀、菲涅爾透鏡形狀、粗糙表面等，從而能夠調整發光裝置之方向特性、或光提取效率。The shape of the outer surface of the sealing member 6 can be variously selected according to light distribution characteristics and the like required for the light emitting device 100. For example, by making the upper surface a convex lens shape, a concave lens shape, a Fresnel lens shape, a rough surface, and the like, it is possible to adjust the directional characteristics of the light emitting device or the light extraction efficiency.

於密封構件6中亦可含有著色劑、光擴散劑、金屬構件、各種填料、波長轉換構件等。The sealing member 6 may contain a colorant, a light diffusing agent, a metal member, various fillers, a wavelength conversion member, and the like.

波長轉換構件係使發光元件3之光進行波長轉換之材料。於來自發光元件3之發光為藍色光之情形時，作為波長轉換構件，可適當地使用氧化鋁系螢光體之一種即釔鋁石榴石系螢光體(以下，稱為「YAG：Ce」)。YAG：Ce螢光體能夠吸收發光元件發出之藍色系之光之一部分，並且發出作為補色之黃色系之光，因此能夠比較簡單地形成發出白色系之混色光之高輸出之發光裝置100。The wavelength conversion member is a material that performs wavelength conversion of light from the light emitting element 3. When the light emitted from the light-emitting element 3 is blue light, as the wavelength conversion member, yttrium aluminum garnet-based phosphor (hereinafter referred to as "YAG: Ce"), which is a type of alumina-based phosphor, can be suitably used. ). YAG: Ce phosphor can absorb a part of the blue light emitted by the light-emitting element and emit the yellow light as a complementary color. Therefore, it is relatively easy to form a high-output light emitting device 100 that emits white mixed color light.

(保護膜)
發光裝置100亦可進而具備保護膜。保護膜係將金屬構件2、導線1等被覆之絕緣性之構件。具體而言，保護膜係至少對設置於導線1或金屬構件2之表面之含Ag層進行被覆之主要抑制導線1及金屬構件2之表面的含Ag層之變色或腐蝕之構件。進而，亦可任意地被覆導線1、發光元件3、接合構件5、基體(樹脂成形體)4等除了金屬構件2以外之構件之表面、或未設置含Ag層之金屬構件2之表面。保護膜係透光性構件。因此，能夠維持導線1之表層13之高反射率。作為保護膜之材料，例如可列舉：Al2 O3 、SiO2 、TiO2 、ZrO2 、ZnO、Nb2 O5 、MgO、In2 O3 、Ta2 O5 、HfO2 、SeO、Y2 O3 、SnO2 等氧化物、或AlN、TiN、ZrN等氮化物、ZnF2 、SrF2 等氟化物。該等可單獨使用，亦可混合使用。或者，亦可為使該等積層之方式。(Protective film)
The light emitting device 100 may further include a protective film. The protective film is an insulating member that covers a metal member 2 or a lead 1. Specifically, the protective film is a member that covers at least the Ag-containing layer provided on the surface of the lead 1 or the metal member 2 and mainly suppresses discoloration or corrosion of the Ag-containing layer on the surface of the lead 1 and the metal member 2. Furthermore, the surface of a member other than the metal member 2 such as the lead wire 1, the light emitting element 3, the bonding member 5, the base (resin molded body) 4, or the surface of the metal member 2 on which the Ag-containing layer is not provided may be arbitrarily covered. The protective film is a light-transmitting member. Therefore, the high reflectance of the surface layer 13 of the lead wire 1 can be maintained. Examples of the material of the protective film include Al 2 O 3 , SiO 2 , TiO 2 , ZrO 2 , ZnO, Nb 2 O 5 , MgO, In 2 O 3 , Ta 2 O 5 , HfO 2 , SeO, Y 2 Oxides such as O 3 and SnO 2 , nitrides such as AlN, TiN, and ZrN, and fluorides such as ZnF 2 and SrF 2 . These can be used alone or in combination. Alternatively, it is also possible to make such a layer.

導線1由於表層13以Ag為主成分，因此，藉由用保護膜被覆導線1之表面，從而能夠抑制表層13之硫化、或氧化。進而，於金屬構件2之表面含有Ag之情形時，藉由用保護膜被覆其表面，從而能夠防止Ag因硫化、或氧化而變色。Since the lead 1 has Ag as a main component, the surface of the lead 1 is covered with a protective film, so that the surface layer 13 can be prevented from being sulfurized or oxidized. Further, when the surface of the metal member 2 contains Ag, the surface of the metal member 2 can be prevented from being discolored by sulfurization or oxidation by covering the surface with a protective film.

保護膜自含有含Au或Ag層之金屬構件2之表面起連續地設置於導線1、發光元件3、接合構件5及基體4等之表面。The protective film is continuously provided on the surface of the lead wire 1, the light-emitting element 3, the bonding member 5, the base 4, and the like from the surface containing the metal member 2 containing the Au or Ag layer.

保護膜雖然可利用濺射法、化學氣相沈積法形成，但特別較佳為利用原子層沈積法(ALD(Atomic Layer Deposision)法)形成。根據ALD法，能夠製成非常均勻之保護膜，並且，所形成之保護膜比其他成膜方法獲得之保護膜更緻密，因此能夠非常有效地防止導線1或金屬構件2之表面之含Ag層之硫化。Although the protective film can be formed by a sputtering method or a chemical vapor deposition method, it is particularly preferably formed by an atomic layer deposition method (ALD (Atomic Layer Deposision) method). According to the ALD method, a very uniform protective film can be made, and the formed protective film is denser than the protective films obtained by other film forming methods, so it can effectively prevent the Ag-containing layer on the surface of the lead 1 or the metal member 2 Of vulcanization.

發光裝置100除了上述以外，亦可具有各種構件。例如，作為保護元件而搭載齊納二極體。
[實施例]The light emitting device 100 may have various members in addition to the above. For example, a Zener diode is mounted as a protection element.
[Example]

作為實施例1～4，準備表1所示之導線1，並製造如圖1A及1B所示之發光裝置100。As Examples 1 to 4, a lead wire 1 shown in Table 1 was prepared, and a light emitting device 100 shown in FIGS. 1A and 1B was manufactured.

於實施例1～4中，為了避免伸線加工時之熱處理影響，作為芯材11，準備市售之直徑25 μm之Cu導線。於對該Cu導線進行脫脂處理之後，用10%硫酸水溶液進行酸中和處理。In Examples 1 to 4, in order to avoid the influence of heat treatment during wire drawing processing, a commercially available Cu wire having a diameter of 25 μm was prepared as the core material 11. After the Cu wire was degreased, an acid neutralization treatment was performed with a 10% sulfuric acid aqueous solution.

接著，使用以下之浴組成，進行中間層12之鍍敷。
(Pd鍍液)
氯化四氨鈀、作為Pd金屬＝5 g/L
硝酸銨＝150 g/L
3吡啶磺酸鈉＝3 g/L
用pH 8.5氨水進行調整
鍍Pd以液溫50℃、電流密度1 A/dm2 之條件進行。Next, the intermediate layer 12 was plated using the following bath composition.
(Pd plating solution)
Tetraamminepalladium chloride as Pd metal = 5 g / L
Ammonium nitrate = 150 g / L
3 sodium pyridine sulfonate = 3 g / L
Pd plating was adjusted with ammonia water at pH 8.5 under the conditions of a liquid temperature of 50 ° C and a current density of 1 A / dm 2 .

於鍍Pd之後，進行水洗，其後繼續使用以下之浴組成進行表層13之鍍敷。
(Ag鍍液)
氰化銀鉀＝70 g/L
氰化鉀＝120 g/L
碳酸鉀＝30 g/L
鍍Ag於液溫30℃、電流密度2 A/dm2 下進行鍍敷，製作導線1。After Pd plating, water washing was performed, and then the surface layer 13 was plated using the following bath composition.
(Ag plating solution)
Silver potassium cyanide = 70 g / L
Potassium cyanide = 120 g / L
Potassium carbonate = 30 g / L
Ag plating was performed at a liquid temperature of 30 ° C. and a current density of 2 A / dm 2 to produce lead 1.

中間層(鍍Pd)12及表層(鍍Ag)13之鍍層厚度分別根據鍍敷時間進行調整。對於各個鍍層厚度，利用FIB-SEM裝置，對製成之導線1拍攝截面之任意處，拍攝3張，作為100,000倍之SEM照片。將3張照片中最大及最小膜厚之平均值作為中間層(鍍Pd)12之膜厚及表層(鍍Ag)13之膜厚。The thicknesses of the intermediate layer (Pd plating) 12 and the surface layer (Ag plating) 13 are adjusted according to the plating time, respectively. For each thickness of the plating layer, a FIB-SEM apparatus was used to photograph any part of the cross section of the prepared wire 1 and 3 photographs were taken as 100,000 times SEM photographs. The average of the maximum and minimum film thicknesses in the three photographs was taken as the film thickness of the intermediate layer (Pd plating) 12 and the film thickness of the surface layer (Ag plating) 13.

圖3中表示實施例1之導線之表面SEM照片。另外，將基於FIB-SEM之截面觀察照片示於圖4。FIG. 3 shows a SEM photograph of the surface of the lead of Example 1. FIG. A cross-sectional observation photograph by FIB-SEM is shown in FIG. 4.

接著，準備於包含三菱伸銅製之ALLOY 194 Cu合金之母材之表面利用電解電鍍依次形成有厚度為2 μm之Ni鍍層、進而厚度為0.03 μm之Pd鍍層、進而厚度為0.004 μm之Au鍍層、其上為厚度為2.5 μm之Ag層之一對引線框架即金屬構件2。Next, a Ni-plated layer having a thickness of 2 μm, a Pd-plated layer having a thickness of 0.03 μm, and an Au-plated layer having a thickness of 0.004 μm were sequentially formed on the surface of the base material including the ALLOY 194 Cu alloy made by Mitsubishi Nod copper. There is a pair of lead frames, that is, the metal member 2, which is an Ag layer having a thickness of 2.5 μm.

進而，如圖1A及1B所示，藉由傳遞模塑成型形成將此種引線分別埋設於基體4之封裝體10。再者，雖然至發光裝置100被單片化為止，連結有複數個一對引線之狀態之引線框架在成形有複數個基體4之封裝體10之集合體之狀態下經過各步驟，但為了便於說明，用圖1A及1B示出之1個發光裝置100(一個)進行說明。Further, as shown in FIGS. 1A and 1B, packages 10 in which such leads are embedded in the base 4 are formed by transfer molding, respectively. Furthermore, although the lead frame in a state where a plurality of pairs of leads are connected until the light-emitting device 100 is singulated, each step is performed in a state where the assembly of the package 10 having the plurality of base bodies 4 is formed, but for convenience The description will be made using one light emitting device 100 (one) shown in FIGS. 1A and 1B.

本實施例之封裝體10具有凹部，並且金屬構件2於凹部之底面露出。於該金屬構件2上，將透光性之樹脂作為接合構件5，並載置上表面具備正負之電極之發光元件3，並進行接合。然後，將金屬構件2與發光元件3之焊墊電極之間用如上方式製作之導線1連接。再者，封裝體10被載置於支持台，該支持台於以加熱器溫度180℃被加熱之狀態下，進行以下之導線連接步驟。The package body 10 of this embodiment has a concave portion, and the metal member 2 is exposed on the bottom surface of the concave portion. A light-transmitting resin is used as the bonding member 5 on the metal member 2, and a light-emitting element 3 having positive and negative electrodes on the upper surface is placed and bonded. Then, the metal member 2 and the pad electrode of the light-emitting element 3 are connected by the lead wire 1 manufactured as described above. In addition, the package body 10 is placed on a support stand, and the support stand is heated at a heater temperature of 180 ° C. and performs the following wire connection steps.

以下列舉導線1之連接條件之一例。
於導線1連接到焊墊電極31上時之連接條件(第一接合條件)係加重為70 g、超音波之震盪頻率為150 kHz、超音波之施加時間為30 msec。An example of the connection conditions of the lead wire 1 is given below.
The connection conditions (first joining conditions) when the lead 1 is connected to the pad electrode 31 are 70 g in weight, the ultrasonic oscillation frequency is 150 kHz, and the ultrasonic application time is 30 msec.

使連接於焊墊電極31上之導線1延伸，連接於金屬構件2上之連接部時之連接條件(第二接合條件)係加重為65 g、超音波之震盪頻率為60 kHz、超音波施加時間為10 msec。The connection condition (second joining condition) when the lead wire 1 connected to the pad electrode 31 is extended and the connection portion on the metal member 2 is increased to 65 g, the ultrasonic vibration frequency is 60 kHz, and the ultrasonic wave is applied The time is 10 msec.

然後，於使用ALD法以60 nm之厚度形成SiO2 作為保護膜之後，於凹部內形成含有YAG螢光體之透光性樹脂之密封構件6。Then, after forming SiO 2 as a protective film with a thickness of 60 nm using the ALD method, a sealing member 6 containing a light-transmitting resin containing YAG phosphor is formed in the recess.

對於如此製造之發光裝置，將進行總光通量測定之結果示於表1。
另外，將初始之總光通量與基於電流65 mA之發光可靠性試驗後(硫化試驗)之總光通量之維持率亦同時示於表1。硫化試驗之條件係於H2 S、NO2 混合氣體氣氛內配置發光裝置並進行。具體而言，係以H2 S：2 ppm、NO2 ：4 ppm之濃度、於溫度40℃、相對濕度75%之氣氛中，將發光裝置100保管600小時之試驗。光束維持率係相對於該硫化試驗前之輸出之輸出比。Table 1 shows the results of measuring the total luminous flux of the light-emitting device thus manufactured.
In addition, the initial total luminous flux and the maintenance rate of the total luminous flux after the luminous reliability test (vulcanization test) based on the current of 65 mA are also shown in Table 1. The conditions of the vulcanization test were performed by disposing a light-emitting device in a mixed gas atmosphere of H 2 S and NO 2 . Specifically, the test was carried out at a concentration of H 2 S: 2 ppm and NO 2 : 4 ppm in a temperature of 40 ° C. and a relative humidity of 75% to store the light-emitting device 100 for 600 hours. The beam maintenance ratio is the output ratio relative to the output before the vulcanization test.

與上述實施例1同樣地，作為實施例2～4，如表1所示，準備各種鍍敷規格之導線1，同樣地準備發光裝置100。In the same manner as in Example 1, as Examples 2 to 4, as shown in Table 1, the lead wires 1 of various plating specifications were prepared, and the light-emitting device 100 was prepared in the same manner.

另外，作為比較例1，除了使用直徑18 μm之Au線以外，製作與實施例1同樣之發光裝置。In addition, as Comparative Example 1, a light-emitting device similar to Example 1 was produced except that an Au wire having a diameter of 18 μm was used.

另外，作為比較例2，除了於芯材Cu上僅鍍敷Pd 40nm以外，製作與實施例1同樣之發光裝置。進而，作為比較例3及4，如表1所示，準備各種鍍敷規格之導線1，同樣地準備發光裝置100。In addition, as Comparative Example 2, a light-emitting device similar to that of Example 1 was produced except that only Pd was 40 nm plated on the core material Cu. Furthermore, as Comparative Examples 3 and 4, as shown in Table 1, the lead wires 1 of various plating specifications were prepared, and the light-emitting device 100 was prepared in the same manner.

針對如此製造之發光裝置，將進行總光通量測定之結果示於表1。
[表1]
Table 1 shows the results of measuring the total luminous flux of the light-emitting device manufactured in this manner.
[Table 1]

如表1所示，實施例1～4之發光裝置無論表層(鍍Ag)13之厚度如何，均顯示出較高之初始總光通量，而於可靠性試驗中亦能夠維持較高之光束維持率。但是，於比較例之發光裝置中，於如比較例1及2般無Au線、Ag表層13之情形時、或表層(鍍Ag)13之厚度較薄之情形時，僅能夠獲得較低之初始總光通量。另一方面，於如比較例3般增加Ag表層之厚度之情形時，雖然能夠獲得較高之初始總光通量，但於長期可靠性試驗之結果中，顯現出總光通量下降。As shown in Table 1, the light-emitting devices of Examples 1 to 4 showed a higher initial total luminous flux regardless of the thickness of the surface layer (Ag plating) 13, and were able to maintain a higher beam maintenance rate in the reliability test. . However, in the light-emitting device of the comparative example, when there is no Au line or the Ag surface layer 13 as in Comparative Examples 1 and 2, or when the thickness of the surface layer (Ag plating) 13 is thin, only a lower value can be obtained. Initial total luminous flux. On the other hand, when the thickness of the Ag surface layer is increased as in Comparative Example 3, although a higher initial total luminous flux can be obtained, the result of the long-term reliability test shows a decrease in the total luminous flux.

以上表明，任一實施例中，均可期待能夠提高含Ag層之反射率，可提高發光裝置之光提取效率，並且，發光可靠性試驗中之總光通量維持率亦較為穩定。The above shows that in any of the embodiments, it is expected that the reflectance of the Ag-containing layer can be improved, the light extraction efficiency of the light emitting device can be improved, and the total luminous flux maintenance rate in the light emission reliability test is also relatively stable.

100‧‧‧發光裝置100‧‧‧light-emitting device

1‧‧‧導線 1‧‧‧ lead

2‧‧‧金屬構件 2‧‧‧ metal components

3‧‧‧發光元件 3‧‧‧light-emitting element

4‧‧‧基體(樹脂成形體) 4‧‧‧ substrate (resin molding)

5‧‧‧接合構件 5‧‧‧Joint member

6‧‧‧密封構件 6‧‧‧sealing member

10‧‧‧封裝體 10‧‧‧ Package

11‧‧‧以Cu為主成分之芯材 11‧‧‧Core material with Cu as main component

12‧‧‧以Pd為主成分之中間層 12‧‧‧ Intermediate layer mainly composed of Pd

13‧‧‧以Ag為主成分之表層 13‧‧‧Surface layer mainly composed of Ag

31‧‧‧焊墊電極 31‧‧‧pad electrode

32‧‧‧積層結構體 32‧‧‧ laminated structure

圖1A係用於說明一實施形態之發光裝置之概略立體圖。FIG. 1A is a schematic perspective view illustrating a light emitting device according to an embodiment.

圖1B係用於說明一實施形態之發光裝置之概略截面圖。 FIG. 1B is a schematic cross-sectional view for explaining a light-emitting device according to an embodiment.

圖2係用於說明一實施形態之複層焊線之概略截面圖。 FIG. 2 is a schematic cross-sectional view for explaining a multi-layer bonding wire according to an embodiment.

圖3A係示出實施例1之焊線之表面之倍率為1000倍的SEM照片。 FIG. 3A is an SEM photograph showing the surface magnification of the bonding wire of Example 1 at 1000 times.

圖3B係示出實施例1之焊線之表面之倍率為5000倍的SEM照片。 FIG. 3B is a SEM photograph showing the surface magnification of the bonding wire of Example 1 at 5000 times.

圖4係示出實施例1之焊線之截面之基於FIB-SEM之截面觀察照片。 FIG. 4 is a cross-sectional observation photograph based on FIB-SEM showing a cross section of a bonding wire in Example 1. FIG.

Claims (6)

一種發光裝置，其具備：發光元件，其具備焊墊電極；以及金屬構件，其經由導線與上述焊墊電極連接，且 上述導線具備：芯材，其以Cu為主成分；中間層，其以Pd為主成分；以及表層，其以Ag為主成分。A light-emitting device comprising: a light-emitting element including a pad electrode; and a metal member connected to the pad electrode via a wire, and The wire includes a core material having Cu as a main component, an intermediate layer having Pd as a main component, and a surface layer having Ag as a main component. 如請求項1之發光裝置，其中上述中間層之厚度為30 nm以上且100 nm以下，並且，上述表層之厚度為40 nm以上且300 nm以下。For example, the light-emitting device of claim 1, wherein the thickness of the intermediate layer is 30 nm to 100 nm, and the thickness of the surface layer is 40 nm to 300 nm. 如請求項1或2之發光裝置，其中上述中間層含有選自Cu、Te、Ge、Se、Au、Ag中之至少一種以上。The light-emitting device according to claim 1 or 2, wherein the intermediate layer contains at least one selected from Cu, Te, Ge, Se, Au, and Ag. 如請求項1或2之發光裝置，其中上述表層含有選自Pd、Au、Se、S、C、N、O中之至少一種以上。The light-emitting device according to claim 1 or 2, wherein the surface layer contains at least one selected from the group consisting of Pd, Au, Se, S, C, N, and O. 如請求項1或2之發光裝置，其中上述焊墊電極之表面含有選自Al、Pd、Pt、Rh、Ru中之至少一種以上。The light-emitting device according to claim 1 or 2, wherein the surface of the pad electrode contains at least one selected from the group consisting of Al, Pd, Pt, Rh, and Ru. 如請求項1或2之發光裝置，其中上述金屬構件之表面含有選自Ag、Au、Pd、Rh、Pt中之至少一種以上。The light-emitting device according to claim 1 or 2, wherein the surface of the metal member contains at least one selected from the group consisting of Ag, Au, Pd, Rh, and Pt.
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