TW201917503A - Condition monitoring method for manufacturing tool, semiconductor manufacturing system and condition monitoring method thereof - Google Patents
Condition monitoring method for manufacturing tool, semiconductor manufacturing system and condition monitoring method thereof Download PDFInfo
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Abstract
Description
本發明實施例關於一種半導體技術,特別是有關於一種半導體製造系統及其製造機台的狀況監控方法。 Embodiments of the present invention relate to a semiconductor technology, and more particularly to a semiconductor manufacturing system and a method for monitoring the condition of the manufacturing machine.
近年來,半導體積體電路(semiconductor integrated circuits)經歷了指數級的成長。在積體電路材料以及設計上的技術進步下,產生了多個世代的積體電路,其中每一世代較前一世代具有更小更複雜的電路。在積體電路發展的過程中,當幾何尺寸(亦即,製程中所能產出的最小元件或者線)縮小時,功能密度(亦即,每一晶片區域所具有的互連裝置的數目)通常會增加。一般而言,此種尺寸縮小的製程可以提供增加生產效率以及降低製造成本的好處,然而,此種尺寸縮小的製程亦會增加製造與生產積體電路的複雜度。 In recent years, semiconductor integrated circuits have experienced exponential growth. In the advancement of integrated circuit materials and design techniques, multiple generations of integrated circuits have been produced, each of which has smaller and more complex circuits than the previous generation. In the development of an integrated circuit, when the geometric size (ie, the smallest component or line that can be produced in the process) is reduced, the functional density (ie, the number of interconnects per wafer area) It usually increases. In general, such a reduced size process can provide the benefits of increased production efficiency and reduced manufacturing costs. However, such reduced size processes also increase the complexity of manufacturing and manufacturing integrated circuits.
積體電路,是藉由一系列的半導體製造機台(簡稱為製造機台)處理晶圓而產出。每個製造機台通常是依據一預先定義或預先決定的製程程式(process recipe),在晶圓上執行一積體電路製造工作(又稱為一製造流程(manufacturing process)或製程),其中上述製程程式界定上述製程的各種參數。例如,積體電路製造通常使用需要多個在生產上和支援上相關的製造機台來完成多道製程,而積體電路製造者需要關注於監測每一製造機台的硬體及相關聯的製程,以確認及維持積體電路製造的穩定性、可重複性及良率。此種機台監測可藉由一錯誤偵測及分類(fault detection and classification,FDC)系統來完成,其在製程中監測製造機台,並識別出發生於上述製造機台且可能造成製程偏離原本預期狀況的錯誤。 The integrated circuit is produced by processing a wafer by a series of semiconductor manufacturing machines (referred to as manufacturing machines). Each manufacturing machine typically performs an integrated circuit manufacturing operation (also referred to as a manufacturing process or process) on the wafer in accordance with a predefined or predetermined process recipe. The process program defines various parameters of the above process. For example, integrated circuit fabrication typically requires multiple production and support related manufacturing machines to perform multiple passes, and integrated circuit manufacturers need to focus on monitoring the hardware and associated of each manufacturing machine. Process to confirm and maintain the stability, repeatability and yield of integrated circuit manufacturing. Such machine monitoring can be accomplished by a fault detection and classification (FDC) system that monitors the manufacturing machine during the process and identifies the occurrence of the manufacturing machine and may cause the process to deviate from the original The expected condition is wrong.
雖然目前現有的製造機台的狀況監控方法及系統已經足以達成其目標,但這些方法及系統不能在各方面令人滿意。 Although the current state of the art monitoring methods and systems for manufacturing machines are sufficient to achieve their goals, these methods and systems are not satisfactory in all respects.
本揭露一些實施例提供一種製造機台的狀況監控方法。上述方法包括在一半導體製造機台中依據一製造流程之多個操作程序來處理一基板。上述方法更包括在各操作程序中,量測來自半導體製造機台之一實際振動波形。上述方法還包括比較在其中一操作程序中所量測到之實際振動波形和關聯於該操作程序之一預期振動波形。此外,上述方法包括基於上述比較,在實際振動波形與預期振動波形上對應的資料點之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 The present disclosure provides a method of monitoring the condition of a manufacturing machine. The above method includes processing a substrate in a semiconductor manufacturing machine in accordance with a plurality of operating procedures of a manufacturing process. The above method further includes measuring the actual vibration waveform from one of the semiconductor manufacturing machines in each of the operating procedures. The above method also includes comparing the actual vibration waveform measured in one of the operational procedures with an expected vibration waveform associated with one of the operational procedures. Moreover, the above method includes issuing an alert based on the comparison described above when an amplitude difference between the actual vibration waveform and the data point corresponding to the expected vibration waveform exceeds an acceptable range of values.
本揭露一些實施例提供一種半導體製造系統的狀況監控方法。上述方法包括在一半導體製造廠內移動一傳送構件,以傳送一基板。上述方法更包括量測傳送構件移動至各選定位置時之一實際振動資料。上述方法還包括比較在其中一選 定位置時所量測到之實際振動資料和關聯於該選定位置之一預期振動資料。此外,上述方法包括基於上述比較,在實際振動資料與預期振動資料之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 The present disclosure provides a method of monitoring a condition of a semiconductor manufacturing system. The above method includes moving a transfer member within a semiconductor manufacturing facility to transport a substrate. The above method further includes measuring one of the actual vibration data when the transport member moves to each of the selected positions. The method further includes comparing the actual vibration data measured at one of the selected positions and the expected vibration data associated with one of the selected positions. Moreover, the above method includes issuing an alert based on the comparison described above when an amplitude difference between the actual vibration data and the expected vibration data exceeds an acceptable range of values.
本揭露一些實施例提供一種半導體製造系統,包括一傳送構件、一檢測裝置及一錯誤偵測及分類系統。傳送構件配置用於在一半導體製造廠內傳送一基板。檢測裝置設置於傳送構件上。錯誤偵測及分類系統配置用於接收檢測裝置所量測到傳送構件移動至各選定位置時之一實際振動資料,及比較在其中一選定位置時所量測到之實際振動資料和關聯於該選定位置之一預期振動資料,並在實際振動資料與預期振動資料之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 The present disclosure provides a semiconductor manufacturing system including a transmitting member, a detecting device, and an error detecting and sorting system. The transfer member is configured to transport a substrate within a semiconductor manufacturing facility. The detecting device is disposed on the conveying member. The error detection and classification system is configured to receive an actual vibration data measured by the detecting device when the transmitting member moves to each selected position, and compare the actual vibration data measured at one of the selected positions and associated with the A warning is issued when one of the selected positions is expected to vibrate and an amplitude difference between the actual vibration data and the expected vibration data exceeds an acceptable value range.
1‧‧‧半導體製造系統 1‧‧‧Semiconductor Manufacturing System
10‧‧‧網路 10‧‧‧Network
20‧‧‧資料庫 20‧‧‧Database
30、30a、30b、30c‧‧‧製造機台 30, 30a, 30b, 30c‧‧‧ manufacturing machine
31‧‧‧反應腔室 31‧‧‧Reaction chamber
311‧‧‧頂殼 311‧‧‧ top shell
312‧‧‧底蓋/傳送構件 312‧‧‧Bottom cover/transport member
31A‧‧‧開口 31A‧‧‧ Opening
31B‧‧‧開口 31B‧‧‧ openings
32‧‧‧晶舟 32‧‧‧The boat
321‧‧‧旋轉平台 321‧‧‧Rotating platform
322‧‧‧加熱器 322‧‧‧heater
33‧‧‧下腔室 33‧‧‧ lower chamber
34‧‧‧升降機構 34‧‧‧ Lifting mechanism
341‧‧‧螺桿 341‧‧‧ screw
342‧‧‧螺帽滑件 342‧‧‧ nut slider
35‧‧‧機械手臂 35‧‧‧ Robotic arm
40‧‧‧檢測裝置 40‧‧‧Detection device
41‧‧‧基座 41‧‧‧Base
411‧‧‧中心支柱 411‧‧‧ center pillar
412‧‧‧開孔 412‧‧‧ openings
42‧‧‧質量塊 42‧‧‧Quality
43‧‧‧彈簧 43‧‧‧ Spring
44‧‧‧壓電元件 44‧‧‧Piezoelectric components
45‧‧‧線路 45‧‧‧ lines
46‧‧‧外殼 46‧‧‧Shell
50‧‧‧先進製程控制系統 50‧‧‧Advanced Process Control System
60‧‧‧錯誤偵測及分類系統 60‧‧‧Error Detection and Classification System
70‧‧‧其他實體 70‧‧‧Other entities
80‧‧‧傳送裝置 80‧‧‧Transfer
81‧‧‧軌道 81‧‧‧ Track
82‧‧‧懸吊式載具/傳送構件 82‧‧‧suspension vehicle/transport member
83‧‧‧晶圓承載盒 83‧‧‧ wafer carrier
100‧‧‧製造機台的狀況監控方法 100‧‧‧ Condition monitoring method for manufacturing machine
101-105‧‧‧操作 101-105‧‧‧ operation
200‧‧‧半導體製造系統的狀況監控方法 200‧‧‧ Condition monitoring method for semiconductor manufacturing systems
201-205‧‧‧操作 201-205‧‧‧ operation
S1‧‧‧上表面 S1‧‧‧ upper surface
S2‧‧‧下表面 S2‧‧‧ lower surface
P1-P4‧‧‧位置點 P1-P4‧‧‧ Location
W‧‧‧晶圓 W‧‧‧ wafer
第1圖顯示根據本發明一些實施例之一半導體製造系統的方塊圖。 1 shows a block diagram of a semiconductor fabrication system in accordance with some embodiments of the present invention.
第2圖顯示根據一些實施例之一製造機台的示意圖。 Figure 2 shows a schematic diagram of a manufacturing machine in accordance with one of the embodiments.
第3圖顯示根據一些實施例之一檢測裝置的示意圖。 Figure 3 shows a schematic diagram of a detection device in accordance with some embodiments.
第4圖顯示根據一些實施例之一製造機台的狀況監控方法的簡化流程圖。 Figure 4 shows a simplified flow diagram of a condition monitoring method for manufacturing a machine in accordance with one of the embodiments.
第5A圖至第5E圖顯示根據一些實施例,一製造機台所實施製造流程之多個主要操作程序的示意圖。 5A through 5E are schematic diagrams showing a plurality of main operational procedures of a manufacturing process implemented by a manufacturing machine, in accordance with some embodiments.
第6A、6B圖顯示根據一些實施例,一製造機台在一晶圓裝載程序中之預期振動波形對時間之關係圖表,及製造機台在 晶圓裝載程序中所量測到之實際振動波形對時間之關係圖表。 6A, 6B are graphs showing the expected vibration waveform versus time for a manufacturing machine in a wafer loading procedure, and the actual vibration waveforms measured by the manufacturing machine during the wafer loading procedure, in accordance with some embodiments. A chart of the relationship to time.
第7A、7B圖顯示根據一些實施例,一製造機台在一晶圓傳送程序中之預期振動波形對時間之關係圖表,及製造機台在晶圓傳送程序中所量測到之實際振動波形對時間之關係圖表。 7A, 7B are graphs showing the expected vibration waveform versus time for a manufacturing machine in a wafer transfer program, and the actual vibration waveforms measured by the manufacturing machine during the wafer transfer process, in accordance with some embodiments. A chart of the relationship to time.
第8A、8B圖顯示根據一些實施例,一製造機台在一晶圓處理程序中之預期振動波形對時間之關係圖表,及製造機台在晶圓處理程序中所量測到之實際振動波形對時間之關係圖表。 8A, 8B are graphs showing the expected vibration waveform versus time for a manufacturing machine in a wafer processing program, and the actual vibration waveforms measured by the manufacturing machine in the wafer processing program, in accordance with some embodiments. A chart of the relationship to time.
第9圖顯示根據一些實施例之一半導體製造系統之部分的上視示意圖。 Figure 9 shows a top view of a portion of a semiconductor fabrication system in accordance with some embodiments.
第10圖顯示根據一些實施例之一半導體製造系統的狀況監控方法的簡化流程圖。 Figure 10 shows a simplified flow diagram of a condition monitoring method for a semiconductor fabrication system in accordance with some embodiments.
以下揭露之實施方式或實施例是用於說明或完成本發明之多種不同技術特徵,所描述之元件及配置方式的特定實施例是用於簡化說明本發明,使揭露得以更透徹且完整,以將本揭露之範圍完整地傳達予同領域熟悉此技術者。當然,本揭露也可以許多不同形式實施,而不局限於以下所述之實施例。 The embodiments and the embodiments disclosed below are intended to illustrate or complete the various features of the present invention. The specific embodiments of the described elements and arrangements are used to simplify the description of the present invention so that the disclosure can be more thorough and complete. The scope of the disclosure is fully conveyed to those skilled in the art. Of course, the disclosure may be embodied in many different forms and is not limited to the embodiments described below.
在下文中所使用的空間相關用詞,例如“在...下方”、“下方”、“較低的”、“上方”、“較高的”及類似的用詞,是為了便於描述圖示中一個元件或特徵與另一個(些)元件或特徵之間 的關係。除了在圖式中繪示的方位之外,這些空間相關用詞也意欲包含使用中或操作中的裝置之不同方位。例如,裝置可能被轉向不同方位(旋轉90度或其他方位),而在此所使用的空間相關用詞也可依此相同解釋。此外,若實施例中敘述了一第一特徵形成於一第二特徵之上或上方,即表示其可能包含上述第一特徵與上述第二特徵是直接接觸的情況,亦可能包含了有附加特徵形成於上述第一特徵與上述第二特徵之間,而使得上述第一特徵與第二特徵未直接接觸的情況。 Spatially related terms as used hereinafter, such as "below", "below", "lower", "above", "higher" and the like, are used to facilitate the description of the illustration. The relationship between one element or feature and another element or feature(s). In addition to the orientation depicted in the drawings, these spatially related terms are also intended to encompass different orientations of the device in use or operation. For example, the device may be turned to a different orientation (rotated 90 degrees or other orientation), and the spatially related terms used herein may also be interpreted the same. In addition, if a first feature is formed on or above a second feature in the embodiment, it may indicate that the first feature may be in direct contact with the second feature, and may also include additional features. Formed between the first feature and the second feature described above such that the first feature and the second feature are not in direct contact with each other.
以下不同實施例中可能重複使用相同的元件標號及/或文字,這些重複是為了簡化與清晰的目的,而非用以限定所討論的不同實施例及/或結構之間有特定的關係。另外,在圖式中,結構的形狀或厚度可能擴大,以簡化或便於標示。必須了解的是,未特別圖示或描述之元件可以本領域技術人士所熟知之各種形式存在。 The same component numbers and/or characters may be repeated in the following various embodiments, which are for the purpose of simplification and clarity, and are not intended to limit the specific relationship between the various embodiments and/or structures discussed. In addition, in the drawings, the shape or thickness of the structure may be enlarged to simplify or facilitate the marking. It is to be understood that elements not specifically shown or described may be in various forms well known to those skilled in the art.
第1圖顯示根據本發明一些實施例之一半導體製造系統1的方塊圖。半導體製造系統1可以是一虛擬積體電路製造系統(或一虛擬晶圓製造廠(virtual wafer manufacturing facility))。半導體製造系統1實施一系列的半導體製造流程(semiconductor manufacturing processes)以產出積體電路裝置。例如,半導體製造系統1可以實施半導體製造流程於一基板(或一晶圓)上以產生材料層、圖案特徵、及/或積體電路。上述基板包括一半導體基板(或晶圓)、一光罩、或其他任何基底物質。為了清楚起見,第1圖中之半導體製造系統1是被簡化,以便於更能理解本發明的概念。在半導體製造系統1中可以加入其他 的特徵,並且在半導體製造系統1之其他實施方式中,以下所述的某些特徵也可以被更換或移除。 Figure 1 shows a block diagram of a semiconductor fabrication system 1 in accordance with some embodiments of the present invention. The semiconductor manufacturing system 1 can be a virtual integrated circuit manufacturing system (or a virtual wafer manufacturing facility). The semiconductor manufacturing system 1 implements a series of semiconductor manufacturing processes to produce integrated circuit devices. For example, the semiconductor fabrication system 1 can implement a semiconductor fabrication process on a substrate (or a wafer) to create material layers, pattern features, and/or integrated circuits. The substrate includes a semiconductor substrate (or wafer), a photomask, or any other substrate material. For the sake of clarity, the semiconductor manufacturing system 1 of Fig. 1 is simplified to facilitate a better understanding of the concepts of the present invention. Other features may be incorporated in the semiconductor fabrication system 1, and in other embodiments of the semiconductor fabrication system 1, certain features described below may also be replaced or removed.
半導體製造系統1包括一網路10,用以使得多種實體(例如一資料庫20、一製造機台30、一檢測裝置40、一先進製程控制(advanced process control,APC)系統50、一錯誤偵測及分類(fault detection and classification,FDC)系統60、及其他實體70)能夠彼此互相通信。在一些實施例中,半導體製造系統1可以包括不只一個上述各種實體,並且更包括在所述實施例中沒有繪示出的其他實體。在第1圖之實施例中,半導體製造系統1的各個實體透過網路10和其他實體互動,以提供服務給其他實體及/或接受其他實體的服務。網路10可以為單一網路或多種不同的網路,例如內部網路、網際網路、其他網路、或上述的組合。網路10包括有線通訊頻道、無線通訊頻道、或兩者的組合。 The semiconductor manufacturing system 1 includes a network 10 for enabling a plurality of entities (e.g., a database 20, a manufacturing machine 30, a detecting device 40, an advanced process control (APC) system 50, and a false detection. The fault detection and classification (FDC) system 60, and other entities 70) are capable of communicating with each other. In some embodiments, semiconductor fabrication system 1 may include more than one of the various entities described above, and further includes other entities not illustrated in the described embodiments. In the embodiment of Figure 1, the various entities of the semiconductor manufacturing system 1 interact with other entities via the network 10 to provide services to other entities and/or to other services. Network 10 can be a single network or a variety of different networks, such as an internal network, the Internet, other networks, or a combination of the above. Network 10 includes a wired communication channel, a wireless communication channel, or a combination of both.
資料庫20用以儲存關聯於半導體製造系統1的資料,尤其是關聯於半導體製造流程的資料。在一些實施例中,資料庫20儲存從製造機台30、檢測裝置40、先進製程控制系統50、錯誤偵測及分類系統60、其他實體70、及上述的組合收集來的資料。例如,資料庫20可以儲存下列資料:關聯於由製造機台30所處理之基板(為了方便說明,下文中僅以晶圓來表示被處理之基板)之晶圓特徵的資料、關聯於製造機台30所實施用以處理晶圓之製程參數的資料、關聯於由檢測裝置40所量測及收集到製造機台30在半導體製造流程中之狀況的資料、關聯於先進製程控制系統50及錯誤偵測及分類系統60對上述晶圓 特徵、製程參數及/或製造機台30之狀況進行分析的資料、及其他關聯於半導體製造系統1的資料。在一些實施例中,製造機台30、檢測裝置40、先進製程控制系統50、錯誤偵測及分類系統60、及其他實體70之每一者可具有一對應的資料庫。 The database 20 is used to store data associated with the semiconductor manufacturing system 1, particularly data associated with semiconductor manufacturing processes. In some embodiments, the repository 20 stores data collected from the manufacturing machine 30, the detection device 40, the advanced process control system 50, the error detection and classification system 60, other entities 70, and combinations thereof. For example, the database 20 may store information relating to the wafer characteristics of the substrate processed by the manufacturing machine 30 (for convenience of description, hereinafter only the wafer is processed), associated with the manufacturing machine The data of the process parameters for processing the wafer, the data measured by the detection device 40 and the status of the manufacturing machine 30 in the semiconductor manufacturing process, associated with the advanced process control system 50 and errors The detection and classification system 60 analyzes the wafer features, process parameters, and/or conditions of the manufacturing machine 30, and other materials associated with the semiconductor manufacturing system 1. In some embodiments, each of manufacturing machine 30, detection device 40, advanced process control system 50, error detection and classification system 60, and other entities 70 may have a corresponding database.
製造機台30用以執行一半導體製造流程(簡稱為製程)。根據一些實施例,製造機台30可以為一化學氣相沉積(chemical vapor deposition,CVD)機台、一物理氣相沉積(physical vapor deposition,PVD)機台、一蝕刻(etching)機台、一熱氧化(thermal oxidation)機台、一離子佈植(ion implantation)機台、一化學機械研磨(chemical mechanical polishing,CMP)機台、一快速升溫退火(rapid thermal annealing,RTA)機台、一光微影(photolithography)機台、一擴散(diffusion)機台、或者其他半導體製造機台。 The manufacturing machine 30 is used to execute a semiconductor manufacturing process (referred to as a process). According to some embodiments, the manufacturing machine 30 can be a chemical vapor deposition (CVD) machine, a physical vapor deposition (PVD) machine, an etching machine, and a Thermal oxidation machine, ion implantation machine, chemical mechanical polishing (CMP) machine, rapid thermal annealing (RTA) machine, one light A photolithography machine, a diffusion machine, or other semiconductor manufacturing machine.
第2圖顯示根據一些實施例之製造機台30的示意圖。在第2圖之實施例中,製造機台30為一化學氣相沉積(CVD)機台,例如包括一爐管(furnace),用以執行一化學氣相沉積製程。在一晶圓W被置入製造機台30之後,於一高溫環境下受到化學氣相沉積製程的處理,其表面上可形成一薄膜。 FIG. 2 shows a schematic diagram of a manufacturing machine 30 in accordance with some embodiments. In the embodiment of Fig. 2, the manufacturing machine 30 is a chemical vapor deposition (CVD) machine, for example, including a furnace for performing a chemical vapor deposition process. After a wafer W is placed in the manufacturing machine 30, it is subjected to a chemical vapor deposition process in a high temperature environment, and a film can be formed on the surface.
製造機台30包括一反應腔室31、一晶舟32及一下腔室33。反應腔室31具有一頂殼311及一底蓋312。頂殼311在其縱向軸線(亦即,圖中之Z軸方向)上延伸一高度。頂殼311之上端呈封閉。頂殼311之下端則呈開放,且允許晶舟32被移入或移出反應腔室31,以進行晶圓W之批次處理(batch processing)。底蓋312以可分離的方式連接頂殼311,且可密封 頂殼311之下端。例如,底蓋312由一升降機構34所驅動而可相對頂殼311進行移動,當底蓋312移動至如第2圖中所示之位置且與頂殼311之下端連接時,可在反應腔室31中建立一密封環境。由於底蓋312可用於將晶圓W傳送至反應腔室31內,故以下說明中亦將底蓋312稱作一”傳送構件”。 The manufacturing machine 30 includes a reaction chamber 31, a boat 32, and a lower chamber 33. The reaction chamber 31 has a top case 311 and a bottom cover 312. The top case 311 extends a height in its longitudinal axis (i.e., the Z-axis direction in the drawing). The upper end of the top case 311 is closed. The lower end of the top case 311 is open and allows the boat 32 to be moved into or out of the reaction chamber 31 for batch processing of the wafer W. The bottom cover 312 is detachably coupled to the top case 311 and seals the lower end of the top case 311. For example, the bottom cover 312 is driven by a lifting mechanism 34 to be movable relative to the top case 311. When the bottom cover 312 is moved to the position shown in FIG. 2 and connected to the lower end of the top case 311, the reaction chamber can be A sealed environment is established in chamber 31. Since the bottom cover 312 can be used to transfer the wafer W into the reaction chamber 31, the bottom cover 312 is also referred to as a "transport member" in the following description.
晶舟32設置於底蓋312之上表面S1且朝向反應腔室31。在沉積製程中,晶舟32用以支持及保持複數個垂直疊放的晶圓W,且允許反應氣體(reactant gas)水平地流經晶圓W的表面,以在其上形成所需的薄膜厚度。為了簡明之目的,在第2圖中未繪示出和反應腔室31側壁上之開口31A、31B連接之供氣、排氣系統,也未繪示出用以使反應氣體均勻地分布於反應腔室31內的氣流引導結構(例如風扇及/或噴嘴管)。在一些實施例中,晶舟32之底部連接有一旋轉平台321,用以在沉積製程中轉動晶舟32,以提高晶圓W的沉積均勻度。旋轉平台321上亦具有一加熱器322,用以加熱晶圓W,以促進其上之薄膜形成。 The boat 32 is disposed on the upper surface S1 of the bottom cover 312 and faces the reaction chamber 31. In the deposition process, the wafer boat 32 is used to support and hold a plurality of vertically stacked wafers W, and allows a reactive gas to flow horizontally through the surface of the wafer W to form a desired film thereon. thickness. For the sake of brevity, the gas supply and exhaust systems connected to the openings 31A, 31B on the side walls of the reaction chamber 31 are not shown in Fig. 2, nor are they shown to uniformly distribute the reaction gas in the reaction. The airflow within the chamber 31 directs the structure (e.g., a fan and/or nozzle tube). In some embodiments, the bottom of the boat 32 is coupled to a rotating platform 321 for rotating the boat 32 during the deposition process to increase the uniformity of deposition of the wafer W. The rotating platform 321 also has a heater 322 for heating the wafer W to promote film formation thereon.
下腔室33位於反應腔室31下方,用以便利於晶圓W被載入或載出晶舟32之操作。在第2圖之實施例中,上述用以驅動底蓋312之升降機構34為一導螺桿(lead screw),設置於下腔室33內,可將一螺桿341之旋轉運動轉換成一螺帽滑件342之直線運動,進而使連接於螺帽滑件342之底蓋312沿著Z軸方向發生上下移動。為了簡明之目的,第2圖中未繪示出用以驅使螺桿341發生旋轉運動之機構。在一些實施例中,上述供氣、抽氣系統所包括之幫浦、管線、及/或其他部件亦可以設置於 下腔室33內(圖未示)。 The lower chamber 33 is located below the reaction chamber 31 to facilitate the operation of loading or unloading the wafer W into the wafer boat 32. In the embodiment of FIG. 2, the lifting mechanism 34 for driving the bottom cover 312 is a lead screw disposed in the lower chamber 33 to convert the rotational motion of a screw 341 into a nut slip. The linear movement of the member 342 causes the bottom cover 312 attached to the nut slider 342 to move up and down along the Z-axis direction. For the sake of brevity, the mechanism for driving the screw 341 to rotate is not shown in FIG. In some embodiments, the pumps, lines, and/or other components included in the gas supply and pumping system described above may also be disposed in the lower chamber 33 (not shown).
請回到第1圖,在一些實施例中,檢測裝置40用以量測及收集製造機台30在半導體製造流程中之狀況的資料。例如,檢測裝置40可包括一振動計(vibration meter),用以在半導體製造流程中量測來自製造機台30之振動波形。此資訊可被用來判斷製造機台30之運作狀況(及/或其所執行的半導體製造流程)是否為正常、即將發生異常、或者已經偏離原本預期狀況而須立即停止運作。 Returning to Figure 1, in some embodiments, the detection device 40 is used to measure and collect information on the condition of the manufacturing machine 30 in the semiconductor manufacturing process. For example, detection device 40 can include a vibration meter for measuring vibration waveforms from manufacturing machine 30 in a semiconductor manufacturing process. This information can be used to determine if the operational status of the manufacturing machine 30 (and/or the semiconductor manufacturing process it is performing) is normal, an impending exception, or has deviated from the originally anticipated condition and must immediately cease operation.
在一些實施例中,檢測裝置40設置於製造機台30中之一可動構件上。例如,在第2圖之實施例中,檢測裝置40安裝於爐管之底蓋312(傳送構件)上,且可隨著底蓋312進行移動。關於移動底蓋312之操作程序在後面段落中配合參照第5A-5E圖會再做進一步說明。 In some embodiments, the detection device 40 is disposed on one of the movable members of the manufacturing machine 30. For example, in the embodiment of Fig. 2, the detecting device 40 is mounted on the bottom cover 312 (transport member) of the furnace tube and is movable with the bottom cover 312. The procedure for moving the bottom cover 312 will be further explained in the following paragraphs with reference to Figures 5A-5E.
在一些實施例中,檢測裝置40設置於製造機台30中不直接暴露於反應氣體及高溫環境下的位置。例如,在第2圖之實施例中,檢測裝置40可安裝於底蓋312之下表面S2且朝向下腔室33。如此一來,能夠避免檢測裝置40受到反應腔室31內之化學品侵蝕及高溫的影響,以具有較長的使用壽命及穩定的量測表現。然而,本揭露實施例也可以有許多其他的變化及修改。例如,檢測裝置40亦可以埋設於底蓋312內(不暴露在外)。或者,檢測裝置40亦可以安裝於下腔室33之側壁上而不隨著底蓋312(傳送構件)進行移動。 In some embodiments, the detection device 40 is disposed in a location in the manufacturing machine 30 that is not directly exposed to reactive gases and high temperature environments. For example, in the embodiment of FIG. 2, the detecting device 40 can be mounted to the lower surface S2 of the bottom cover 312 and toward the lower chamber 33. In this way, the detection device 40 can be prevented from being affected by the chemical attack and high temperature in the reaction chamber 31, so as to have a long service life and stable measurement performance. However, many other variations and modifications are possible in the disclosed embodiments. For example, the detection device 40 can also be embedded in the bottom cover 312 (not exposed). Alternatively, the detecting device 40 may be mounted on the side wall of the lower chamber 33 without moving with the bottom cover 312 (transport member).
第3圖顯示根據一些實施例之檢測裝置40的示意圖。在第3圖之實施例中,檢測裝置40為一壓電式振動感測器 (piezoelectric vibration sensor),其包括一基座41、一質量塊42、一彈簧43、一壓電元件44、及複數條線路45。如第3圖所示,彈簧43、質量塊42及壓電元件44是依序地安裝在和基座41連接之一中心支柱411上(亦即,質量塊42是夾設在彈簧43與壓電元件44之間)。基座41之一外側形成有一開孔412,用以與一固定元件(例如螺栓,圖未示)結合,並使得檢測裝置40固定於被測物(例如製造機台30之底蓋312)上。各線路45之一端電性連接於壓電元件44,另一端則延伸至檢測裝置40之外部,藉此導出所量測到的電訊號(例如電壓V)。 FIG. 3 shows a schematic diagram of a detection device 40 in accordance with some embodiments. In the embodiment of FIG. 3, the detecting device 40 is a piezoelectric vibration sensor including a base 41, a mass 42, a spring 43, a piezoelectric element 44, and A plurality of lines 45. As shown in Fig. 3, the spring 43, the mass 42 and the piezoelectric element 44 are sequentially mounted on a center post 411 connected to the base 41 (i.e., the mass 42 is sandwiched between the spring 43 and the pressure). Between electrical components 44). An opening 412 is formed on one of the outer sides of the base 41 for coupling with a fixing member (for example, a bolt, not shown), and the detecting device 40 is fixed to the object to be tested (for example, the bottom cover 312 of the manufacturing machine 30). . One end of each line 45 is electrically connected to the piezoelectric element 44, and the other end extends to the outside of the detecting device 40, thereby deriving the measured electrical signal (for example, voltage V).
透過上述結構配置,當檢測裝置40受振時(例如,當製造機台30之底蓋312所發生之振動傳導至檢測裝置40時),質量塊42施加於壓電元件44的力會隨之變化,且該力的變化與被測物之振動加速度成正比。由此,進一步利用壓電元件44之壓電效應即可得到與被測物之振動加速度成正比的電壓值。換句話說,檢測裝置40所量測到之電壓值(單位例如為微伏(μV))可用來表示被測物之振動加速度大小(單位例如為重力加速度單位(G))。 With the above configuration, when the detecting device 40 is vibrated (for example, when the vibration generated by the bottom cover 312 of the manufacturing machine 30 is transmitted to the detecting device 40), the force applied to the piezoelectric element 44 by the mass 42 changes accordingly. And the change in the force is proportional to the vibration acceleration of the measured object. Thereby, the piezoelectric effect of the piezoelectric element 44 can be further utilized to obtain a voltage value proportional to the vibration acceleration of the object to be measured. In other words, the voltage value (unit, for example, microvolt (μV)) measured by the detecting device 40 can be used to indicate the magnitude of the vibration acceleration of the object to be measured (unit is, for example, unit of gravity acceleration (G)).
在一些實施例中,檢測裝置40亦可包括一外殼46。如第3圖所示,外殼46可以結合於基座41上,並包覆質量塊42、彈簧43及壓電元件44,以降低檢測裝置40所量測的電訊號受到外界環境(例如溫度變化)之影響。應瞭解的是,為了量測被測物之振動情況,檢測裝置40亦可能採用其他種量測原理之振動感測器(例如渦電流式、電容式或光纖式位移感測器、雷射式速度感測器(Linear Velocity Transducer)、加速度感測器、或壓 電阻式(Piezoresistive)MEMS加速規)而並不以上述實施例為限。 In some embodiments, the detection device 40 can also include a housing 46. As shown in FIG. 3, the outer casing 46 can be coupled to the base 41 and covered with the mass 42, the spring 43, and the piezoelectric element 44 to reduce the electrical signal measured by the detecting device 40 from the external environment (for example, temperature change). The impact of ). It should be understood that in order to measure the vibration condition of the measured object, the detecting device 40 may also adopt other kinds of vibration measuring sensors (such as eddy current type, capacitive or fiber type displacement sensor, and laser type). A Linear Velocity Transducer, an Acceleration Sensor, or a Piezoresistive MEMS Accelerometer is not limited to the above embodiment.
請再回到第1圖,先進製程控制(APC)系統50用以監測被處理晶圓的晶圓特徵,並可利用線上量測資料(例如,上述由檢測裝置40所收集到的資料)、製程模式、及多種演算法,來提供中間製程目標的動態微調,進而達到晶圓的最終產品目標。上述製程目標的微調又可稱為控制行動(control actions),其補償了可能造成晶圓特徵變化的硬體工具問題及/或製程問題。先進製程控制系統50可以即時(real time)、晶圓對晶圓(wafer-to-wafer)、批次對批次(batch-to-batch)、或上述組合等方式來執行控制行動。 Returning to Figure 1, an Advanced Process Control (APC) system 50 is used to monitor the wafer characteristics of the wafer being processed, and can utilize on-line measurement data (e.g., the data collected by the detection device 40 described above), Process mode, and a variety of algorithms to provide dynamic fine-tuning of intermediate process targets to achieve the final product goal of the wafer. Fine-tuning of the above process targets can also be referred to as control actions, which compensate for hardware tool issues and/or process issues that may cause variations in wafer characteristics. The advanced process control system 50 can perform control actions in real time, wafer-to-wafer, batch-to-batch, or a combination thereof.
在一些實施例中,先進製程控制系統50執行控制行動以修改由製造機台30所執行用來處理晶圓的製程程式。例如,先進製程控制系統50(依據被處理晶圓之檢測資料、製程模式、及各種演算法)針對每個被處理之晶圓修改預先決定的製程程式(尤其是,由製造機台30所實施的製程參數,例如處理時間、氣體流率、反應腔室壓力、溫度、晶圓溫度、及其他製程參數),以確保每個被處理之晶圓都能達到最終產品目標。在一些實施例中,先進製程控制系統50(依據上述由檢測裝置40所收集到的資料)執行控制行動以修改由製造機台30所執行之預先決定的製程程式,並停止製造機台30之運作(例如,停止反應腔室31內之旋轉平台321的運轉及停止供應反應氣體至反應腔室31內等),以避免製程目標異常及/或晶圓報廢。 In some embodiments, advanced process control system 50 performs control actions to modify the process programs executed by manufacturing machine 30 for processing wafers. For example, the advanced process control system 50 (depending on the inspection data of the processed wafer, the process mode, and various algorithms) modifies a predetermined process sequence for each wafer being processed (especially, by the manufacturing machine 30) Process parameters such as processing time, gas flow rate, reaction chamber pressure, temperature, wafer temperature, and other process parameters) to ensure that each wafer being processed meets the final product target. In some embodiments, advanced process control system 50 (according to the data collected by detection device 40 described above) performs control actions to modify predetermined process programs executed by manufacturing machine 30 and to stop manufacturing machine 30 The operation (for example, stopping the operation of the rotating platform 321 in the reaction chamber 31 and stopping the supply of the reaction gas into the reaction chamber 31, etc.) to avoid abnormal process targets and/or wafer scrapping.
錯誤偵測及分類(FDC)系統60藉由監測製造機台 30在半導體製造流程中所實施的製程參數(包括上述由檢測裝置40所收集到的資料),以及監測製造機台30在半導體製造流程中實施的製程參數所得到的晶圓特徵,以評估製造機台30的狀況及偵測其是否已發生錯誤,例如機台狀況劣化。關於利用量測裝置40監控製造機台30狀況的實施方式在後面段落會做進一步介紹。 The error detection and classification (FDC) system 60 monitors the process parameters (including the data collected by the detection device 40 described above) in the semiconductor manufacturing process by the manufacturing machine 30, and monitors the manufacturing machine 30 in semiconductor manufacturing. The wafer characteristics obtained from the process parameters implemented in the process are used to evaluate the condition of the manufacturing machine 30 and to detect whether an error has occurred, such as deterioration of the machine condition. An embodiment of monitoring the condition of the manufacturing machine 30 by the measuring device 40 will be further described in the following paragraphs.
在一些實施例中,錯誤偵測及分類系統60實施統計式製程控制(statistical process control,SPC)以追蹤及分析製造機台30的狀況。例如,錯誤偵測及分類系統60可以實施一或多個統計式製程控制(SPC)圖表,其藉由依時序將關聯於上述製程的統計式製程控制資料繪製成圖表,來記錄製造機台30的歷史製程資料。上述統計式製程控制資料包括關聯於由製造機台30所實施的製程參數(及/或晶圓特徵)。當統計式製程控制資料指出上述製程參數偏離一可接受的目標時(換言之,當錯誤偵測及分類系統60偵測到一錯誤或異常時),錯誤偵測及分類系統60可觸發一警示,通知製造機台30的一操作者,以暫停製造機台30所執行的操作程序、採取另一個行動、或上述的組合,使得製造機台30的任何問題可被識別及補救。 In some embodiments, the error detection and classification system 60 implements a statistical process control (SPC) to track and analyze the condition of the manufacturing machine 30. For example, the error detection and classification system 60 can implement one or more statistical process control (SPC) charts that record the manufacturing machine 30 by plotting the statistical process control data associated with the process in a time chart. Historical process data. The statistical process control data described above includes associated process parameters (and/or wafer features) implemented by manufacturing machine 30. When the statistical process control data indicates that the process parameters are deviating from an acceptable target (in other words, when the error detection and classification system 60 detects an error or anomaly), the error detection and classification system 60 can trigger a warning. An operator of the manufacturing machine 30 is notified to suspend the operational procedures performed by the manufacturing machine 30, take another action, or a combination of the above, such that any problems with the manufacturing machine 30 can be identified and remedied.
在後續介紹的實施例中,錯誤偵測及分類系統60監測關聯於製造機台30的製程參數,以監控製造機台30(例如,一化學氣相沉積(CVD)機台)的狀況。更明確來說,藉由評估製造機台30在製程期間之製程參數(例如,一振動加速度大小),錯誤偵測及分類系統60可以偵測製造機台30的一錯誤或異常,例如製造機台30之一部份的劣化狀況。 In the embodiments described later, the error detection and classification system 60 monitors process parameters associated with the manufacturing machine 30 to monitor the condition of the manufacturing machine 30 (eg, a chemical vapor deposition (CVD) machine). More specifically, the error detection and classification system 60 can detect an error or anomaly of the manufacturing machine 30 by evaluating process parameters (e.g., a magnitude of vibration acceleration) of the manufacturing machine 30 during the manufacturing process, such as a manufacturing machine. The deterioration of one of the stages 30.
第4圖顯示根據一些實施例之一製造機台的狀況監控方法100的簡化流程圖。為了說明,將配合參照第1至3圖及第5至8圖一起描述流程圖。另外,在一些其他實施例中,後續所述製造流程之部分操作程序可以被更換或取消。應瞭解的是,後續關於化學氣相沉積(CVD)機台之狀況的討論僅為例示,製造機台的狀況監控方法100也可以由半導體製造系統1實施以監控任何種類的製造機台30及製造機台30中任何模組的狀況。 Figure 4 shows a simplified flow diagram of a condition monitoring method 100 for manufacturing a machine in accordance with one of the embodiments. For the sake of explanation, the flowchart will be described together with reference to Figs. 1 to 3 and Figs. 5 to 8. Additionally, in some other embodiments, some of the operational procedures of the subsequent manufacturing process may be replaced or cancelled. It should be understood that the following discussion of the state of the chemical vapor deposition (CVD) machine is merely an example, and the condition monitoring method 100 of the manufacturing machine can also be implemented by the semiconductor manufacturing system 1 to monitor any kind of manufacturing machine 30 and The condition of any of the modules in the machine 30 is manufactured.
如第4圖所示,製造機台的狀況監控方法100包括操作101,其中,關聯於製造機台30之預期振動波形被收集。在一些實施例中,可以在製造機台30(例如,化學氣相沉積機台)執行的製造流程之各操作程序中,利用量測裝置40(例如,振動感測器)量測及收集來自製造機台30之振動資料,並將收集到的振動資料傳送至資料庫20進行儲存。 As shown in FIG. 4, the condition monitoring method 100 of the manufacturing machine includes an operation 101 in which an expected vibration waveform associated with the manufacturing machine 30 is collected. In some embodiments, the measurement device 40 (eg, a vibration sensor) can be used to measure and collect from various operational procedures of the manufacturing process performed by the manufacturing machine 30 (eg, a chemical vapor deposition machine). The vibration data of the machine 30 is manufactured, and the collected vibration data is transmitted to the database 20 for storage.
第5A圖至第5E圖顯示根據一些實施例,製造機台30所實施製造流程之多個主要操作程序的示意圖。在第5A圖中,多個晶圓W透過一機械手臂35被裝載至停留在下腔室33內之晶舟32(以下,簡稱此操作程序為一晶圓裝載程序)。在第5B圖中,在晶舟32裝載滿晶圓W之後,透過升降機構34的驅動,底蓋312(傳送構件)朝著頂殼311方向移動,並將晶舟32上之晶圓W送入反應腔室31(以下,簡稱此操作程序為一晶圓傳送程序)。在第5C圖中,在底蓋312與頂殼311之下端連接之後,可在反應腔室31中建立一密封環境。繼之,晶圓W在反應腔室31內受到一化學氣相沉積處理,例如在一高溫環境下,藉由反應氣體 (reactant gas)流經晶圓W的表面,並在其上形成沉積薄膜(以下,簡稱此操作程序為一晶圓處理程序)。在第5D圖中,在沉積製程結束之後,透過升降機構34的驅動,底蓋312朝著下腔室33方向移動,並將晶舟32上之晶圓W送出反應腔室31(此程序亦稱為一晶圓傳送程序)。在第5E圖中,晶圓W透過機械手臂35從晶舟32上卸載(以下,簡稱此操作程序為一晶圓卸載程序)。 5A-5E show schematic diagrams of a number of primary operational procedures for manufacturing processes implemented by manufacturing machine 30, in accordance with some embodiments. In FIG. 5A, a plurality of wafers W are loaded through a robot arm 35 to the wafer boat 32 that stays in the lower chamber 33 (hereinafter, simply referred to as a wafer loading procedure). In FIG. 5B, after the wafer boat 32 is loaded with the wafer W, the bottom cover 312 (transport member) is moved toward the top case 311 by the driving of the elevating mechanism 34, and the wafer W on the wafer boat 32 is sent. The reaction chamber 31 (hereinafter referred to as a wafer transfer program for short) is referred to. In Fig. 5C, after the bottom cover 312 is joined to the lower end of the top case 311, a sealed environment can be established in the reaction chamber 31. Then, the wafer W is subjected to a chemical vapor deposition treatment in the reaction chamber 31, for example, a reaction gas flows through the surface of the wafer W in a high temperature environment, and a deposited film is formed thereon. (Hereinafter, this operation program is referred to as a wafer processing program). In FIG. 5D, after the deposition process is finished, the bottom cover 312 is moved toward the lower chamber 33 by the driving of the lifting mechanism 34, and the wafer W on the wafer boat 32 is sent out of the reaction chamber 31 (this procedure is also Called a wafer transfer program). In FIG. 5E, the wafer W is unloaded from the wafer boat 32 through the robot arm 35 (hereinafter, simply referred to as a wafer unloading procedure).
應瞭解的是,製造機台30所實施之操作程序僅為例示,以便於後續說明,而並非用以限定本揭露。在一些實施例中,上述操作程序也可以被更換或取消,或者一些其他操作程序也可以被加入製造流程中。 It should be understood that the operational procedures implemented by the manufacturing machine 30 are merely illustrative for the purpose of illustration and are not intended to limit the disclosure. In some embodiments, the above described operating procedures may also be replaced or cancelled, or some other operating procedure may be added to the manufacturing process.
在一些實施例中,在製造機台30所實施之各操作程序中,量測裝置40可以即時量測及收集來自製造機台30之振動資料。例如,量測裝置40可以一規律的時間間隔(例如0.5秒)來記錄製造機台30在各操作程序中之振動資料,亦即在各操作程序中,量測裝置40可以量測及記錄多筆振動資料。之後,上述振動資料可被傳送至資料庫20進行儲存。 In some embodiments, in each of the operational procedures performed by the manufacturing machine 30, the metrology device 40 can instantly measure and collect vibrational data from the manufacturing machine 30. For example, the measuring device 40 can record the vibration data of the manufacturing machine 30 in each operating program at regular time intervals (for example, 0.5 seconds), that is, in each operating program, the measuring device 40 can measure and record more. Pen vibration data. Thereafter, the vibration data described above can be transmitted to the database 20 for storage.
在一些實施例中,在製造機台30未發現任何錯誤或異常且所有晶圓W可被適當處理(例如,沒有微粒或異物附著於晶圓W表面、或者沉積薄膜的厚度、均勻度與預期目標均符合)的情況下,操作101可以重複多次(例如數次或數十次),亦即,利用量測裝置40收集製造機台30實施多次製造流程時各操作程序之多筆振動資料,再將上述振動資料傳送至資料庫20進行儲存。 In some embodiments, no errors or anomalies are found at the manufacturing machine 30 and all wafers W can be properly processed (eg, no particles or foreign matter adhere to the surface of the wafer W, or thickness, uniformity, and expected deposition of the film) In the case where the targets are all consistent, the operation 101 may be repeated a plurality of times (for example, several times or tens of times), that is, the plurality of vibrations of each operation program when the manufacturing machine 30 performs the multiple manufacturing processes by the measuring device 40 is collected. The data is transmitted to the database 20 for storage.
應瞭解的是,上述振動資料在被儲存於資料庫20 中之前,可經過進一步處理。例如,關聯於上述製造流程之各操作程序之多筆振動資料之一平均值(mean value)可經過錯誤偵測及分類系統60計算求得且儲存於資料庫20中。另外,關聯於各操作程序之多筆振動資料之一標準差(standard deviation)亦可經過錯誤偵測及分類系統60計算求得且儲存於資料庫20中。 It should be understood that the above vibration data may be further processed before being stored in the database 20. For example, a mean value of a plurality of pieces of vibration data associated with each of the operational procedures of the manufacturing process described above can be calculated by the error detection and classification system 60 and stored in the database 20. In addition, one of the plurality of pieces of vibration data associated with each operating program can also be calculated by the error detection and classification system 60 and stored in the database 20.
如此一來,可以在資料庫20中儲存關聯於製造機台30之各操作程序中振動狀況的大數據樣式(big data pattern),進而得到關聯於製造機台30之各操作程序的一預期振動波形(亦即,製造機台30處於正常運作時之振動波形)。例如,第6A、7A、8A圖分別顯示根據一些實施例,儲存於資料庫20中之製造機台30在一晶圓裝載程序(第5A圖)、一晶圓傳送程序(第5B圖)或一晶圓處理程序(第5C圖)中之一預期振動波形對時間之關係圖表(T-charts)。 In this way, a big data pattern associated with the vibration condition in each operating program of the manufacturing machine 30 can be stored in the database 20, thereby obtaining an expected vibration associated with each operating program of the manufacturing machine 30. The waveform (i.e., the vibration waveform when the manufacturing machine 30 is in normal operation). For example, Figures 6A, 7A, and 8A respectively show that the manufacturing machine 30 stored in the database 20 is in a wafer loading program (Fig. 5A), a wafer transfer program (Fig. 5B), or A graph of expected vibration waveform versus time (T-charts) in a wafer processing program (Fig. 5C).
如第4圖所示,製造機台的狀況監控方法100更包括操作102,其中,另一批次的晶圓W在製造機台30中被處理。根據一些實施例,此批次的晶圓W可依據第5A圖至第5E圖所揭露之相同操作程序被處理。 As shown in FIG. 4, the condition monitoring method 100 of the manufacturing machine further includes an operation 102 in which another batch of wafers W are processed in the manufacturing machine 30. According to some embodiments, the wafer W of this batch can be processed in accordance with the same operational procedures as disclosed in Figures 5A through 5E.
製造機台的狀況監控方法100還包括操作103,其中,利用量測裝置40(在執行操作102同時)收集來自製造機台30之振動資料。在一些實施例中,在製造機台30所實施上述製造流程之各操作程序中,量測裝置40再次量測及收集來自製造機台30之振動資料。例如,在第5A圖至第5E圖所揭露之各操作程序中,利用量測裝置40即時量測及收集來自製造機台30之振動 資料,其中量測裝置40可以一規律的時間間隔來量測製造機台30在各操作程序中之振動資料。 The condition monitoring method 100 of the manufacturing machine also includes an operation 103 in which the vibration data from the manufacturing machine 30 is collected using the measuring device 40 (while performing the operation 102). In some embodiments, in each of the operational procedures in which the manufacturing machine 30 implements the manufacturing process described above, the metrology device 40 again measures and collects vibrational data from the manufacturing machine 30. For example, in each of the operational procedures disclosed in FIGS. 5A-5E, the measurement device 40 is used to instantly measure and collect vibration data from the manufacturing machine 30, wherein the measurement device 40 can measure at regular intervals. The vibration data of the manufacturing machine 30 in each operating procedure is measured.
在一些實施例中,在操作103中由量測裝置40所實施之量測對應於在操作101中由量測裝置40所實施之量測。例如,在操作103中量測裝置40實施記錄之時點與在操作101中量測裝置40實施記錄之時點為相同(亦即,在操作101及103中,量測裝置40可以相同且規律的時間間隔來記錄上述各操作程序中之多筆振動資料)。另外或附加地,在操作103中量測裝置40實施量測之位置點與在操作101中量測裝置40實施量測之位置點亦可為相同。當然,本揭露實施例也可以有許多其他的變化及修改,例如,相對於操作101,在操作103中量測裝置40可以較小的時間間隔來記錄製造機台30之各操作程序中之多筆振動資料。 In some embodiments, the measurements performed by the metrology device 40 in operation 103 correspond to the measurements performed by the metrology device 40 in operation 101. For example, the point at which the measuring device 40 performs the recording in operation 103 is the same as the point at which the measuring device 40 performs the recording in operation 101 (i.e., in operations 101 and 103, the measuring device 40 can be the same and regular time). Interval to record multiple pieces of vibration data in each of the above operating procedures). Additionally or alternatively, the location of the measurement performed by measurement device 40 in operation 103 may be the same as the location of the measurement performed by measurement device 40 in operation 101. Of course, there are many other variations and modifications of the disclosed embodiments. For example, with respect to operation 101, in operation 103, measurement device 40 can record as many of the operational procedures of manufacturing machine 30 at smaller intervals. Pen vibration data.
在操作103中,亦利用錯誤偵測及分類系統60將量測裝置40所收集來自製造機台30之振動資料轉變成對應上述各操作程序中之一實際振動波形。例如,第6B、7B、8B圖分別顯示根據一些實施例,由量測裝置40所收集且經由錯誤偵測及分類系統60運算處理後而得到製造機台30在一晶圓裝載程序(第5A圖)、一晶圓傳送程序(第5B圖)或一晶圓處理程序(第5C圖)中之一實際振動波形對時間之關係圖表(T-charts)。 In operation 103, the error detection and classification system 60 is also used to convert the vibration data collected by the measurement device 40 from the manufacturing machine 30 into an actual vibration waveform corresponding to one of the above operational procedures. For example, the 6B, 7B, and 8B diagrams respectively show that the manufacturing machine 30 is in a wafer loading procedure (5A) collected by the metrology device 40 and processed by the error detection and classification system 60 in accordance with some embodiments. Figure), a wafer transfer program (Fig. 5B) or a wafer processing program (Fig. 5C), one of the actual vibration waveform versus time graph (T-charts).
製造機台的狀況監控方法100還包括操作104,其中,在操作103中所量測到的實際振動波形與在製造機台30預先執行之製造流程(操作101)中所收集到且儲存於資料庫20中之預期振動波形被進行比較。在一些實施例中,上述實際振動 波形與預期振動波形之比較由錯誤偵測及分類系統60來執行。 The condition monitoring method 100 of the manufacturing machine further includes an operation 104 in which the actual vibration waveform measured in operation 103 is collected and stored in the manufacturing flow (operation 101) previously executed by the manufacturing machine 30. The expected vibration waveforms in the library 20 are compared. In some embodiments, the comparison of the actual vibration waveform to the expected vibration waveform is performed by error detection and classification system 60.
在一些實施例中,在比較上述實際振動波形與預期振動波形之前,錯誤偵測及分類系統60藉由分析上述波形對時間之關係圖表,可得到在各操作程序中實際振動波形與預期振動波形之間的振幅差值之一可接受的數值範圍。 In some embodiments, prior to comparing the actual vibration waveform with the expected vibration waveform, the error detection and classification system 60 can obtain the actual vibration waveform and the expected vibration waveform in each operation program by analyzing the waveform versus time relationship graph. One of the range of amplitude differences is an acceptable range of values.
在一些實施例中,上述振幅差值之可接受的數值範圍可以為在各操作程序中預期振動波形之一或數個標準差。例如,在第6A、7A、8A圖中,一上限控制(最大值)設定為預期振動波形之平均值加上一或數個標準差,一下限控制(最小值)設定為預期振動波形之平均值減掉一或數個標準差,而上、下限控制之間的差值即成為關聯於各操作程序之振幅差值之可接受的數值範圍。當然,本揭露實施例也可以有許多其他的變化及修改,例如,上述振幅差值之可接受的數值範圍也可以為在各操作程序中預期振動波形之最大振幅值的一特定比例(specific ratio),且此比例可由操作者依據製造經驗或測試結果來決定,並對錯誤偵測及分類系統60進行設定。另外,各操作程序之振幅差值之可接受的數值範圍可能為相同或不同。 In some embodiments, the acceptable range of values for the amplitude difference described above may be one or a few standard deviations of the expected vibration waveform in each operating sequence. For example, in Figures 6A, 7A, and 8A, an upper limit control (maximum value) is set to the average of the expected vibration waveform plus one or several standard deviations, and a lower limit control (minimum value) is set to the average of the expected vibration waveforms. The value is subtracted by one or several standard deviations, and the difference between the upper and lower limit controls becomes an acceptable range of values associated with the amplitude difference of each operating procedure. Of course, there are many other variations and modifications in the disclosed embodiments. For example, the acceptable numerical range of the amplitude difference may also be a specific ratio of the maximum amplitude value of the expected vibration waveform in each operating procedure. And the ratio can be determined by the operator based on manufacturing experience or test results, and the error detection and classification system 60 is set. In addition, the acceptable range of values for the amplitude differences of the various operating procedures may be the same or different.
在操作104中,在各操作程序中實際振動波形與預期振動波形之間的振幅差值之可接受的數值範圍被決定後,錯誤偵測及分類系統60藉由比較在操作103中所量測到的實際振動波形與儲存於資料庫20中之預期振動波形,以判斷兩波形上對應的資料點之間的振幅差值是否超出上述可接受的數值範圍。若否,則製造機台的狀況監控方法100可以重複上述操作 102至104,直到所有晶圓W被處理。若是,則製造機台的狀況監控方法100繼續操作105,發出一警示(alarm condition)。 In operation 104, after an acceptable range of values for the amplitude difference between the actual vibration waveform and the expected vibration waveform is determined in each operating sequence, the error detection and classification system 60 measures the result in operation 103 by comparison. The actual vibration waveforms obtained are compared with the expected vibration waveforms stored in the database 20 to determine whether the amplitude difference between the corresponding data points on the two waveforms exceeds the above acceptable numerical range. If not, the condition monitoring method 100 of the manufacturing machine can repeat the above operations 102 to 104 until all the wafers W are processed. If so, the condition monitoring method 100 of the manufacturing machine continues with operation 105 to issue an alarm condition.
舉例來說,在第6B圖中,當一晶圓裝載程序中所量測到實際振動波形上之部分資料點超出一可接受的數值範圍時(例如圖中圈選的部分),即表示用於將晶圓W裝載至晶舟32之機械手臂35的某部件可能發生劣化,造成晶圓W可能無法準確地被輸送至晶舟32上之既定位置,而與晶舟32周邊部件發生碰撞,造成異常振動產生。 For example, in Figure 6B, when a portion of the data points on the actual vibration waveform measured in a wafer loading program exceeds an acceptable range of values (such as the circled portion in the figure), A component of the robot arm 35 that loads the wafer W to the wafer boat 32 may be deteriorated, so that the wafer W may not be accurately transported to a predetermined position on the boat 32, and collide with peripheral components of the boat 32, Causes abnormal vibrations.
在第7B圖中,當一晶圓傳送程序中所量測到實際振動波形上之部分資料點超出一可接受的數值範圍時(例如圖中圈選的部分),即表示用於驅動底蓋312之升降機構34的某部件可能發生劣化(例如,螺桿341上之潤滑劑大量揮發),並造成底蓋312在移動時產生異常振動。 In Figure 7B, when a portion of the data point on the actual vibration waveform measured in a wafer transfer program exceeds an acceptable value range (for example, the circled portion in the figure), it means that the bottom cover is driven. A certain component of the lifting mechanism 34 of 312 may be deteriorated (for example, the lubricant on the screw 341 is largely volatilized), and the bottom cover 312 is caused to generate abnormal vibration while moving.
在第8B圖中,當一晶圓處理程序中所量測到實際振動波形上之部分資料點超出一可接受的數值範圍時(例如圖中圈選的部分),即表示關聯於沉積製程之製造機台30之某硬體部分(例如,旋轉平台321包含之內置馬達或齒輪、反應腔室31中之風扇、或下腔室33中之幫浦等)或者某製程步驟(例如,反應腔室31中進行之化學反應或氣流分配等)可能發生問題,而形成異常振動。 In Figure 8B, when a portion of the data points on the actual vibration waveform measured in a wafer processing program exceeds an acceptable range of values (for example, the portion circled in the figure), it is associated with the deposition process. A certain hard part of the manufacturing machine 30 (for example, the rotating platform 321 includes a built-in motor or gear, a fan in the reaction chamber 31, or a pump in the lower chamber 33, etc.) or a process step (for example, a reaction chamber) The chemical reaction or the distribution of the gas flow in the chamber 31, etc. may cause a problem and abnormal vibration is formed.
基於上述說明,當錯誤偵測及分類系統60偵測到製造機台30在某操作程序中特定時點之實際振動波形偏離於預期振動波形(亦即,偵測到一錯誤或異常)時,即表示關聯於此操作程序之製造機台30的某部份可能發生劣化。如此一來, 可以即時發現製造機台30之操作程序(時間點上)及關聯於操作程序之相關部分(位置點上)的錯誤或異常。 Based on the above description, when the error detection and classification system 60 detects that the actual vibration waveform of the manufacturing machine 30 at a particular time in an operating procedure deviates from the expected vibration waveform (ie, an error or an abnormality is detected), It is indicated that some portion of the manufacturing machine 30 associated with this operating program may be degraded. In this way, the operation program of the manufacturing machine 30 (at the time point) and the error or abnormality associated with the relevant part of the operation program (on the position point) can be immediately found.
此外,為了避免上述某操作程序中之異常振動可能造成製造機台30或晶圓W受損,錯誤偵測及分類系統60可以發出一警示,通知製造機台30的操作者,以暫停製造機台30之運作、採取另一個行動、或上述的組合,使得製造機台30的任何問題被及時識別及補救。 In addition, in order to prevent the abnormal vibration in one of the above operating procedures from causing damage to the manufacturing machine 30 or the wafer W, the error detection and classification system 60 may issue an alert to notify the operator of the manufacturing machine 30 to suspend the manufacturing machine. The operation of the station 30, taking another action, or a combination of the above, causes any problems with the manufacturing machine 30 to be promptly identified and remedied.
在一些實施例中,錯誤偵測及分類系統60還可以實施一快速傅立葉轉換(Fast Fourier Transform),將上述實際振動波形自一時域(time domain)波形轉換成一頻域(frequency domain)波形,其中所得到之頻域波形包括不同頻率下對振幅的資料。藉由分析此頻域波形,可以得到對應不同振動頻率之製造機台30中各振動源之振幅大小(上述振動源例如為馬達、幫浦、或風扇等,其分別具有不同振動頻率與振幅大小,且可以利用量測裝置40預先量測得到),進而判斷為哪一振動源發生振動異常,以利於操作者更快速地識別問題及進行改善。 In some embodiments, the error detection and classification system 60 can also implement a Fast Fourier Transform to convert the actual vibration waveform from a time domain waveform to a frequency domain waveform, wherein The resulting frequency domain waveforms include data on amplitude at different frequencies. By analyzing the frequency domain waveform, the amplitude of each vibration source in the manufacturing machine 30 corresponding to different vibration frequencies can be obtained (the vibration source is, for example, a motor, a pump, or a fan, which have different vibration frequencies and amplitudes, respectively). Moreover, it can be measured by the measuring device 40 in advance, and further, it is determined which vibration source has a vibration abnormality, so that the operator can identify the problem and improve it more quickly.
再者,量測裝置40除了用於製造機台30之錯誤偵測外,其也可以用於偵測半導體製造系統1中其他不同裝置(例如,第9圖中之一傳送裝置80)之錯誤或異常。 Furthermore, the measuring device 40 can be used to detect errors of other different devices in the semiconductor manufacturing system 1 (for example, one of the transmitting devices 80 in FIG. 9) in addition to the error detection of the manufacturing machine 30. Or abnormal.
第9圖顯示根據一些實施例之半導體製造系統1之部分的上視示意圖。半導體製造系統1(例如為一半導體晶圓製造廠)包括複數個製造機台30、30a、30b、30c、及一傳送裝置80。製造機台30a、30b、30c與製造機台30(例如上述化學氣相沉積機台)可以為實施相同或不同製程的機台。傳送裝置80用 以在製造機台30、30a、30b、30c之間傳送基板,例如為晶圓或光罩(為了方便說明,下文中僅以晶圓來表示被傳送之基板)。 Figure 9 shows a top view of a portion of a semiconductor fabrication system 1 in accordance with some embodiments. The semiconductor manufacturing system 1 (for example, a semiconductor wafer fabrication facility) includes a plurality of manufacturing machines 30, 30a, 30b, 30c, and a conveyor 80. The manufacturing machines 30a, 30b, 30c and the manufacturing machine 30 (for example, the chemical vapor deposition machine described above) may be machines that perform the same or different processes. The transfer device 80 is used to transfer substrates between the manufacturing machines 30, 30a, 30b, 30c, such as wafers or reticle (for convenience of explanation, only the transferred substrates are represented by wafers hereinafter).
在第9圖之實施例中,傳送裝置80包括一軌道81,其固定於晶圓製造廠之天花板且配置在製造機台30、30a、30b、30c之上方。傳送裝置80亦包括一懸吊式載具(overhead hoist vehicle)82,其配置用以沿著軌道81移動且在製造機台30、30a、30b、30c之間傳送晶圓。更具體來說,懸吊式載具82可以抓取一晶圓承載盒83,其中收容有一或多片的晶圓,並且更可以在軌道81上之一選定位置(如圖中之位置點P1、P2、P3或P4)將晶圓承載盒83傳送至製造機台30、30a、30b、30c中之一者以進行一晶圓處理,並在晶圓處理之後,再將晶圓承載盒83傳送至製造機台30、30a、30b、30c中之另一者以進行另一晶圓處理。 In the embodiment of Figure 9, the conveyor 80 includes a track 81 that is secured to the ceiling of the wafer fabrication facility and disposed above the manufacturing machines 30, 30a, 30b, 30c. The conveyor 80 also includes an overhead hoist vehicle 82 that is configured to move along the track 81 and transport the wafer between the manufacturing machines 30, 30a, 30b, 30c. More specifically, the suspended carrier 82 can grab a wafer carrier 83 in which one or more wafers are housed, and more preferably at a selected position on the track 81 (as shown in the figure P1) , P2, P3 or P4) transporting the wafer carrier cassette 83 to one of the manufacturing machines 30, 30a, 30b, 30c for wafer processing, and after wafer processing, the wafer carrier box 83 Transfer to the other of the manufacturing machines 30, 30a, 30b, 30c for another wafer processing.
在第9圖之實施例中,上述量測裝置40(例如,上述振動感測器)安裝於懸吊式載具82上,故可與懸吊式載具82一起沿著軌道81移動而到達晶圓製造廠內之多個選定位置(例如,軌道81所分布的位置)。由於懸吊式載具82可用於在晶圓製造廠內傳送晶圓,故以下說明中亦將懸吊式載具82稱作一”傳送構件”。量測裝置40用以在懸吊式載具82傳送晶圓之過程中評估傳送裝置80之一操作參數(例如,一振動加速度大小),以偵測傳送裝置80的一錯誤或異常,例如傳送裝置80之一部份的劣化狀況。 In the embodiment of Fig. 9, the measuring device 40 (for example, the vibration sensor) is mounted on the suspended carrier 82 so that it can be moved along the rail 81 together with the suspended carrier 82. A plurality of selected locations within the wafer fabrication facility (eg, locations where tracks 81 are distributed). Since the suspended carrier 82 can be used to transport wafers within a wafer fabrication facility, the suspended carrier 82 is also referred to as a "transporting member" in the following description. The measuring device 40 is configured to evaluate an operating parameter (eg, a magnitude of vibration acceleration) of the transmitting device 80 during the process of transporting the wafer by the suspended carrier 82 to detect an error or abnormality of the transmitting device 80, such as transmitting The degradation condition of a portion of the device 80.
第10圖顯示根據一些實施例之一半導體製造系統的狀況監控方法200的簡化流程圖。為了說明,將配合參照第9 圖一起描述流程圖。應瞭解的是,由於半導體製造系統的狀況監控方法200與上述製造機台的狀況監控方法100之部分操作及概念雷同,故以下僅說明半導體製造系統的狀況監控方法200之不同技術特徵。 Figure 10 shows a simplified flow diagram of a condition monitoring method 200 of a semiconductor fabrication system in accordance with some embodiments. For the sake of explanation, the flowchart will be described together with reference to Fig. 9. It should be understood that since the condition monitoring method 200 of the semiconductor manufacturing system is similar to the operation and concept of the condition monitoring method 100 of the manufacturing machine described above, only the different technical features of the condition monitoring method 200 of the semiconductor manufacturing system will be described below.
如第10圖所示,半導體製造系統的狀況監控方法200包括操作201,其中,關聯於半導體製造系統1中之一傳送構件(例如,懸吊式載具82)之預期振動波形被收集。在一些實施例中,可以在傳送構件82沿著軌道81傳送晶圓之過程中,利用量測裝置40量測及收集來自傳送構件82之振動資料,並將收集到的振動資料傳送至資料庫20進行儲存。在一些實施例中,量測裝置40可以即時量測及收集來自傳送構件82之振動資料。例如,量測裝置40可以一規律的時間間隔(例如0.5秒)來記錄傳送構件82在移動過程中之振動資料,亦即可以量測及記錄傳送構件82在軌道81上不同選定位置之多筆振動資料。之後,上述振動資料可被傳送至資料庫20進行儲存。 As shown in FIG. 10, the condition monitoring method 200 of the semiconductor manufacturing system includes an operation 201 in which an expected vibration waveform associated with one of the transmission members (for example, the suspended carrier 82) in the semiconductor manufacturing system 1 is collected. In some embodiments, the vibration data from the transfer member 82 can be measured and collected by the measuring device 40 during the transfer of the wafer along the track 81 by the transfer member 82, and the collected vibration data can be transmitted to the database. 20 for storage. In some embodiments, the metrology device 40 can instantly measure and collect vibrational data from the transport member 82. For example, the measuring device 40 can record the vibration data of the transport member 82 during the movement at a regular time interval (e.g., 0.5 seconds), that is, the plurality of strokes of the transport member 82 at different selected positions on the track 81 can be measured and recorded. Vibration data. Thereafter, the vibration data described above can be transmitted to the database 20 for storage.
在一些實施例中,在傳送構件82傳送晶圓之過程中未發現任何錯誤或異常(例如,傳送構件82沿著軌道81移動時未產生任何異音)的情況下,操作201可以重複多次(例如,數次或數十次),亦即,利用量測裝置40收集傳送構件82沿著軌道81重複繞轉多次之多筆振動資料,並將上述振動資料傳送至資料庫20進行儲存。 In some embodiments, operation 201 may be repeated multiple times without any errors or anomalies being found during transfer of the wafer by transfer member 82 (eg, no transfer of artifacts when transport member 82 moves along track 81). (for example, several times or tens of times), that is, the collecting member 82 is repeatedly used to rotate the plurality of pieces of vibration data along the track 81 by the measuring device 40, and the vibration data is transmitted to the data bank 20 for storage. .
應瞭解的是,上述多筆振動資料在被儲存於資料庫20中之前,亦可經過錯誤偵測及分類系統60進一步計算處理而得到一平均值及一標準差等資料。 It should be understood that the plurality of pieces of vibration data may be further calculated by the error detection and classification system 60 before being stored in the database 20 to obtain an average value and a standard deviation.
如此一來,可以在資料庫20中儲存關聯於上述傳送構件82移動至不同選定位置時振動狀況的大數據樣式(big data pattern),進而得到傳送構件82沿著軌道81移動時之一預期振動波形(亦即,傳送構件82處於正常運作時之振動波形)。 In this way, a big data pattern associated with the vibration condition when the transfer member 82 is moved to a different selected position can be stored in the database 20, thereby obtaining one expected vibration when the transfer member 82 moves along the track 81. The waveform (i.e., the vibration waveform of the transmitting member 82 in normal operation).
如第10圖所示,半導體製造系統的狀況監控方法200更包括操作202,其中,另一批次的晶圓利用傳送構件82在晶圓製造廠內進行傳送。在一些實施例中,在操作202中傳送構件82傳送晶圓之速度與在操作201中為相同。 As shown in FIG. 10, the condition monitoring method 200 of the semiconductor manufacturing system further includes an operation 202 in which another batch of wafers are transferred by the transfer member 82 at the wafer fabrication facility. In some embodiments, the speed at which the transfer member 82 transfers the wafer in operation 202 is the same as in operation 201.
半導體製造系統的狀況監控方法200還包括操作203,其中,利用量測裝置40(在執行操作202同時)收集來自傳送構件82之振動資料。在一些實施例中,在傳送構件82沿著軌道81傳送晶圓之過程中,利用量測裝置40再次量測及收集傳送構件82於不同選定位置時之振動資料。 The condition monitoring method 200 of the semiconductor manufacturing system further includes an operation 203 in which the vibration data from the transfer member 82 is collected using the measurement device 40 (while performing the operation 202). In some embodiments, during the transfer of the wafer along the track 81 by the transfer member 82, the measurement device 40 is used to again measure and collect the vibrational data of the transfer member 82 at different selected locations.
在一些實施例中,在操作203中由量測裝置40所實施之量測對應於在操作201中由量測裝置40所實施之量測。例如,在操作203中量測裝置40實施記錄之時點與在操作201中量測裝置40實施記錄之時點為相同(亦即,在操作201及203中,量測裝置40可以相同且規律的時間間隔來記錄傳送構件82移動過程中之多筆振動資料)。另外或附加地,在操作203中量測裝置40實施量測之位置點與在操作201中量測裝置40實施量測之位置點亦可為相同。 In some embodiments, the measurements performed by the metrology device 40 in operation 203 correspond to the measurements performed by the metrology device 40 in operation 201. For example, the point at which the measuring device 40 performs the recording in operation 203 is the same as the point at which the measuring device 40 performs the recording in operation 201 (i.e., in operations 201 and 203, the measuring device 40 can be the same and regular time). The interval is used to record a plurality of pieces of vibration data during the movement of the conveying member 82). Additionally or alternatively, the location point at which the metrology device 40 performs the measurement in operation 203 may be the same as the location point at which the metrology device 40 performs the measurement in operation 201.
另外,在操作203中,亦利用錯誤偵測及分類系統60將量測裝置40所收集來自傳送構件82之振動資料轉變成一實際振動波形。 In addition, in operation 203, the vibration data collected by the measuring device 40 from the transmitting member 82 is also converted into an actual vibration waveform by the error detection and classification system 60.
半導體製造系統的狀況監控方法200還包括操作204,其中,在操作203中所量測到的實際振動波形與(在操作201中)儲存於資料庫20中之預期振動波形被進行比較。在一些實施例中,上述實際振動波形與預期振動波形之比較由錯誤偵測及分類系統60來執行。錯誤偵測及分類系統60可以比較實際振動波形及預期振動波形,並判斷兩波形上對應的資料點之間的振幅差值是否超出一可接受的數值範圍(可以類似於第6-8圖所揭露之實施方法得到)。若否,則半導體製造系統的狀況監控方法200可以重複上述操作202至204。若是,則半導體製造系統的狀況監控方法200繼續操作205,發出一警示。 The condition monitoring method 200 of the semiconductor manufacturing system further includes an operation 204 in which the actual vibration waveform measured in operation 203 is compared with the expected vibration waveform (in operation 201) stored in the database 20. In some embodiments, the comparison of the actual vibration waveform to the expected vibration waveform is performed by the error detection and classification system 60. The error detection and classification system 60 can compare the actual vibration waveform with the expected vibration waveform and determine whether the amplitude difference between the corresponding data points on the two waveforms exceeds an acceptable numerical range (may be similar to Figure 6-8). The method of implementation of the disclosure is obtained). If not, the condition monitoring method 200 of the semiconductor manufacturing system can repeat the above operations 202 to 204. If so, the condition monitoring method 200 of the semiconductor manufacturing system continues with operation 205 to issue an alert.
舉例來說,當錯誤偵測及分類系統60偵測到傳送構件82於某時間點之實際振動波形偏離於預期振動波形(亦即,兩波形之振幅差值超出可接受的數值範圍)時,即表示傳送裝置80的某部份可能發生劣化或異常。例如,軌道81之多個銜接部分之間可能發生相對偏移而造成異常振動產生。 For example, when the error detection and classification system 60 detects that the actual vibration waveform of the transmitting member 82 at a certain point in time deviates from the expected vibration waveform (ie, the amplitude difference between the two waveforms exceeds an acceptable numerical range), That is, it indicates that some portion of the transport device 80 may be deteriorated or abnormal. For example, a relative offset may occur between the plurality of engaging portions of the track 81 to cause abnormal vibration generation.
在一些實施例中,為了避免傳送構件82在移動過程中之異常振動可能造成晶圓W受損,錯誤偵測及分類系統60可以在偵測到異常當下發出一警示,通知操作者,以暫停傳送構件82之移動、採取另一個行動、或上述的組合。如此一來,能夠即時識別傳送裝置80發生問題之位置點(例如,傳送構件82被暫停之位置點或其附近),而有利於問題被迅速補救。 In some embodiments, in order to prevent the abnormal vibration of the transmitting member 82 during the movement, the wafer W may be damaged, the error detection and classification system 60 may issue an alert to notify the operator to pause when an abnormality is detected. Movement of the transfer member 82, taking another action, or a combination of the above. In this way, it is possible to immediately recognize the point of the problem where the conveying device 80 has a problem (for example, the point at which the conveying member 82 is suspended or its vicinity), and it is advantageous for the problem to be quickly remedied.
本發明實施例亦包括一電腦系統,其執行上述之各種方法和系統,例如監測及評估半導體製造系統1中之製造機台30或傳送裝置80之狀況。在一些實施例中,上述錯誤偵測 及分類(FDC)系統60包括上述電腦系統以監測製造機台30或傳送裝置80之狀況。在各種實施樣態中,上述電腦系統的裝置包括能夠和網路10(例如,一內部網路或網際網路)進行通訊的一網路通訊裝置或一網路運算裝置(例如,行動電話、膝上電腦、個人電腦、網路伺服器)。應可以理解的是,上述裝置中的每一者可以被實施作為上述電腦系統,用以依據如後述方式和網路10進行通訊。依據本發明各種實施例,上述電腦系統(例如,一近端電腦或一連網電腦系統)包括一匯流排元件或用於溝通信息之其他通信機制,其連接次系統和元件,例如一處理元件(例如,處理器、微控制器、數位訊號處理器(DSP)、其他處理元件、或上述之組合)、一系統記憶元件(例如,隨機存取記憶體(RAM))、一靜態儲存元件(例如,唯讀記憶體(ROM))、一磁碟元件(例如,一磁性元件、一光學元件、其他元件、或上述之組合)、一網路介面元件(例如,數據機、乙太網路卡、其他網路介面元件、或上述之組合)、一顯示元件(例如,陰極射線管(CRT)、液晶顯示器(LCD)、其他顯示元件、或上述之組合)、一輸入元件(例如,鍵盤)、一游標控制元件(例如,滑鼠或軌跡球)、及一影像擷取元件(例如,類比或數位攝影機)。在一實施樣態中,上述磁碟元件包括具有一個或多個磁碟元件之一資料庫。 Embodiments of the present invention also include a computer system that performs the various methods and systems described above, such as monitoring and evaluating the condition of manufacturing machine 30 or transfer device 80 in semiconductor manufacturing system 1. In some embodiments, the error detection and classification (FDC) system 60 described above includes the computer system described above to monitor the condition of the manufacturing machine 30 or the transfer device 80. In various implementations, the apparatus of the computer system includes a network communication device or a network computing device (eg, a mobile phone, capable of communicating with the network 10 (eg, an internal network or the Internet). Laptop, PC, web server). It should be understood that each of the above-described devices can be implemented as the above-described computer system for communicating with the network 10 in accordance with a mode as will be described later. In accordance with various embodiments of the present invention, the computer system (eg, a near-end computer or a networked computer system) includes a bus bar component or other communication mechanism for communicating information that connects the subsystem and components, such as a processing component ( For example, a processor, a microcontroller, a digital signal processor (DSP), other processing elements, or a combination thereof, a system memory component (eg, random access memory (RAM)), a static storage component (eg, , read only memory (ROM), a disk component (eg, a magnetic component, an optical component, other components, or a combination thereof), a network interface component (eg, a data machine, an Ethernet card) , other network interface components, or a combination thereof, a display component (eg, a cathode ray tube (CRT), a liquid crystal display (LCD), other display components, or a combination thereof), an input component (eg, a keyboard) , a cursor control element (eg, a mouse or trackball), and an image capture component (eg, an analog or digital camera). In one embodiment, the disk component includes a library of one or more disk components.
依據本發明一些實施例,上述電腦系統藉由處理器執行儲存在系統記憶元件中的包含一個或多個指令之一個或多個序列,以實施特定的操作。在一些實施例中,可從其他的電腦可讀取媒體(例如靜態儲存元件或磁碟元件),將這些 指令讀入系統記憶元件。在另一些實施例中,也可使用硬體線路回路以取代(或組合)軟體指令來實現本發明。依據本發明各種實施例,在一電腦可讀取媒體上載入一邏輯(logic),其係指參與提供指令給處理元件以供執行的任何媒體。此媒體可以有多種形式,包括但不限於:非揮發媒體和揮發性媒體。在一實施例中,上述電腦可讀取媒體為非暫時性(non-transitory)。在各種實施樣態中,非揮發媒體包括光碟或磁碟,例如磁碟元件,而揮發媒體包括動態記憶體,例如系統記憶元件。在一實施樣態中,關於執行指令的資料和資訊係透過一傳輸媒體傳遞到電腦系統,例如以聲波或光波的形式,包括在無線電波和紅外線資料通訊中所產生的。依據本發明各種實施例,傳輸媒體包括同軸電纜線、銅線、及光纖,包括包含匯流排的電線。 In accordance with some embodiments of the present invention, the computer system described above, by the processor, executes one or more sequences of one or more instructions stored in the system memory element to perform a particular operation. In some embodiments, media (e.g., static storage elements or disk components) can be read from other computers and read into the system memory elements. In other embodiments, hardware circuit loops may be used in place of (or in combination with) software instructions to implement the present invention. In accordance with various embodiments of the present invention, a logic is loaded onto a computer readable medium, which is any medium that participates in providing instructions to a processing element for execution. This media can take many forms, including but not limited to: non-volatile media and volatile media. In one embodiment, the computer readable medium is non-transitory. In various implementations, the non-volatile media includes optical or magnetic disks, such as disk components, while the volatile media includes dynamic memory, such as system memory components. In one embodiment, the information and information about the execution of the instructions are transmitted to the computer system via a transmission medium, such as in the form of sound waves or light waves, including those generated in radio wave and infrared data communication. In accordance with various embodiments of the present invention, a transmission medium includes a coaxial cable, a copper wire, and an optical fiber, including an electrical wire including a busbar.
一些一般形式的電腦可讀取媒體包括,例如,軟碟(floppy disk)、軟碟機(flexible disk)、硬碟(hard disk)、磁帶(magnetic tape)、任何其他磁性媒體、CD-ROM、任何其他光學媒體、打孔卡片(punch cards)、紙帶(paper tape)、任何其他具有打孔模式的物理媒體、隨機存取記憶體(RAM)、可編程式唯讀記憶體(PROM)、可抹除可編程式唯讀記憶體(EPROM)、快閃可抹除可編程式唯讀記憶體(FLASH-EPROM)、任何其他的記憶經片或盒式磁盤、載波(carrier wave)、或電腦可以讀取的其他任何媒體。依據本發明各種實施例,上述電腦系統執行指令序列實施本發明。依據本發明其他的各種實施例,各種電腦系統,例如電腦系統,係藉由通訊連線耦接(例如,類似如LAN、WLAN、PTSN、及/ 或各種的其他有線或無線網路(包括電信(telecommunications)、無線、及手機網路)的通訊網路),並執行指令序列以和其他系統協同實施本發明。依據本發明各種實施例,上述電腦系統透過通信連線及通信介面傳送及接收訊息、資料、資訊、以及指令,包括一或多個程式(換言之,應用程式碼)。上述處理元件可以執行接收之上述程式碼及/或儲存在上述磁碟元件或某些其他的非揮發儲存元件中用以執行的程式碼。 Some general forms of computer readable media include, for example, a floppy disk, a flexible disk, a hard disk, a magnetic tape, any other magnetic media, a CD-ROM, Any other optical media, punch cards, paper tape, any other physical medium with puncturing patterns, random access memory (RAM), programmable read-only memory (PROM), Can erase programmable read-only memory (EPROM), flash erasable programmable read-only memory (FLASH-EPROM), any other memory or disk cartridge, carrier wave, or Any other media that the computer can read. In accordance with various embodiments of the present invention, the computer system described above executes a sequence of instructions to implement the invention. In accordance with other various embodiments of the present invention, various computer systems, such as computer systems, are coupled by communication lines (e.g., such as LAN, WLAN, PTSN, and/or various other wired or wireless networks (including telecommunications) (telecommunications), wireless, and mobile network) communication sequences, and executing sequences of instructions to implement the present invention in conjunction with other systems. According to various embodiments of the present invention, the computer system transmits and receives messages, data, information, and instructions through a communication connection and a communication interface, including one or more programs (in other words, application code). The processing component can execute the received code and/or the code stored in the disk component or some other non-volatile storage component for execution.
在適用的情況下,本發明的各種實施樣態可以使用硬體、軟體或硬體和軟體的組合來實現。此外,在適用的情況下,上述不同的硬體元件及/或軟體元件係併入包括軟體、硬體、或兩者的複合元件,而不背離本揭露的精神。在適用的情況下,上述各種硬體元件及/或軟體元件被區分為包括軟體、硬體、或兩者的次元件,而不背離本揭露的範圍。此外,在適用的情況下,需瞭解到軟體元件可以硬體元件實現,反之亦然。依據本揭露,軟體(例如電腦程式碼及/或資料)可以存儲在一個或多個電腦可讀媒體上。亦需瞭解的是,上述軟體可以使用一個或多個一般泛用或專用的電腦及/或電腦系統、連網的及/或沒有連網的。在適用的情況下,上述各種步驟的順序可以改變、併入複合步驟、及/或分別為次步驟,以提供在此所述的功能。 Where applicable, various embodiments of the invention may be implemented using hardware, software, or a combination of hardware and software. Moreover, where applicable, the various hardware components and/or software components described above are incorporated into a composite component including software, hardware, or both without departing from the spirit of the present disclosure. Where applicable, the various hardware components and/or software components described above are divided into secondary components including software, hardware, or both without departing from the scope of the present disclosure. In addition, where applicable, it is to be understood that the software components can be implemented as hardware components and vice versa. In accordance with the present disclosure, software (such as computer code and/or material) can be stored on one or more computer readable media. It should also be understood that the above software may use one or more general purpose or special purpose computers and/or computer systems, networked and/or unconnected. Where applicable, the order of the various steps described above can be changed, incorporated in a composite step, and/or separately as a sub-step to provide the functionality described herein.
綜上所述,本揭露實施例具有以下優點:利用即時量測振動之手段以偵測半導體製造系統中各種製造機台、裝置或傳送構件之錯誤或異常。所量測到之實際振動波形可與在相同條件下量測得到之預期振動波形進行比較,故可以更精準 地判斷是否產生異常狀況。當一異常狀況發生時,錯誤偵測及分類系統可立即反應,並通知維修人員妥善處理,因此能夠減少或避免用於處理半導體基板之製造機台或其他支援裝置發生損壞,並減少晶圓報廢。 In summary, the disclosed embodiments have the advantage of utilizing an instant measurement of vibration to detect errors or anomalies in various manufacturing machines, devices, or transfer members in a semiconductor manufacturing system. The measured actual vibration waveform can be compared with the expected vibration waveform measured under the same conditions, so that it is possible to more accurately determine whether an abnormal condition has occurred. When an abnormal condition occurs, the error detection and classification system can immediately respond and notify the maintenance personnel to properly handle it, thereby reducing or avoiding damage to the manufacturing machine or other supporting device for processing the semiconductor substrate, and reducing wafer scrapping. .
根據一些實施例,提供一種製造機台的狀況監控方法。上述方法包括在一半導體製造機台中依據一製造流程之多個操作程序來處理一基板。上述方法更包括在各操作程序中,量測來自半導體製造機台之一實際振動波形。上述方法還包括比較在其中一操作程序中所量測到之實際振動波形和關聯於該操作程序之一預期振動波形。此外,上述方法包括基於上述比較,在實際振動波形與預期振動波形上對應的資料點之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 According to some embodiments, a condition monitoring method for a manufacturing machine is provided. The above method includes processing a substrate in a semiconductor manufacturing machine in accordance with a plurality of operating procedures of a manufacturing process. The above method further includes measuring the actual vibration waveform from one of the semiconductor manufacturing machines in each of the operating procedures. The above method also includes comparing the actual vibration waveform measured in one of the operational procedures with an expected vibration waveform associated with one of the operational procedures. Moreover, the above method includes issuing an alert based on the comparison described above when an amplitude difference between the actual vibration waveform and the data point corresponding to the expected vibration waveform exceeds an acceptable range of values.
根據一些實施例,製造機台的狀況監控方法更包括基於警示,暫停半導體製造機台之運作。 According to some embodiments, the condition monitoring method of the manufacturing machine further includes suspending operation of the semiconductor manufacturing machine based on the alert.
根據一些實施例,製造機台的狀況監控方法更包括在一預先執行的製造流程之各操作程序中,收集來自半導體製造機台之多筆振動資料。此外,製造機台的狀況監控方法包括將上述振動資料儲存於一資料庫,其中預期振動波形係由資料庫所得到。 According to some embodiments, the condition monitoring method of the manufacturing machine further includes collecting a plurality of pieces of vibration data from the semiconductor manufacturing machine in each of the operational procedures of the pre-executed manufacturing process. In addition, the condition monitoring method of the manufacturing machine includes storing the vibration data in a database, wherein the expected vibration waveform is obtained from the database.
根據一些實施例,製造機台的狀況監控方法更包括將實際振動波形自一時域波形轉換成一頻域波形。此外,製造機台的狀況監控方法包括基於頻域波形,得到對應不同振動頻率之半導體製造機台中各振動源之振幅大小,進而判斷為哪一振動源發生振動異常。 According to some embodiments, the condition monitoring method of the manufacturing machine further includes converting the actual vibration waveform from a time domain waveform to a frequency domain waveform. Further, the method for monitoring the condition of the manufacturing machine includes obtaining the amplitude of each of the vibration sources in the semiconductor manufacturing machine corresponding to the different vibration frequencies based on the frequency domain waveform, and further determining which vibration source has a vibration abnormality.
根據一些實施例,半導體製造機台包括一反應腔室,具有一頂殼及一底蓋。底蓋配置用於在上述操作程序中承載基板且可相對頂殼進行移動。實際振動波形係由設置於底蓋上之一檢測裝置所量測。 According to some embodiments, a semiconductor fabrication machine includes a reaction chamber having a top case and a bottom cover. The bottom cover is configured to carry the substrate in the above operating procedure and is movable relative to the top case. The actual vibration waveform is measured by a detecting device provided on the bottom cover.
根據一些實施例,提供一種半導體製造系統的狀況監控方法。上述方法包括在一半導體製造廠內移動一傳送構件,以傳送一基板。上述方法更包括量測傳送構件移動至各選定位置時之一實際振動資料。上述方法還包括比較在其中一選定位置時所量測到之實際振動資料和關聯於該選定位置之一預期振動資料。此外,上述方法包括基於上述比較,在實際振動資料與預期振動資料之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 According to some embodiments, a condition monitoring method of a semiconductor manufacturing system is provided. The above method includes moving a transfer member within a semiconductor manufacturing facility to transport a substrate. The above method further includes measuring one of the actual vibration data when the transport member moves to each of the selected positions. The method further includes comparing the actual vibration data measured at one of the selected locations and the expected vibration data associated with one of the selected locations. Moreover, the above method includes issuing an alert based on the comparison described above when an amplitude difference between the actual vibration data and the expected vibration data exceeds an acceptable range of values.
根據一些實施例,半導體製造系統的狀況監控方法更包括基於警示,暫停傳送構件之移動。 According to some embodiments, the condition monitoring method of the semiconductor manufacturing system further includes suspending movement of the transfer member based on the alert.
根據一些實施例,傳送構件係一懸吊式載具,配置用於沿著一軌道移動且在上述選定位置之間傳送基板。實際振動波形係由設置於傳送構件上之一檢測裝置所量測。 According to some embodiments, the transfer member is a suspended carrier configured to move along a track and transfer the substrate between the selected locations. The actual vibration waveform is measured by a detecting device provided on the conveying member.
根據一些實施例,傳送構件係一半導體製造機台用於承載基板之一底蓋,配置用於將基板送入及送出半導體製造機台之一反應腔室。實際振動波形係由設置於傳送構件上之一檢測裝置所量測。 According to some embodiments, the transfer member is a semiconductor manufacturing machine for carrying one of the bottom covers of the substrate, configured to feed the substrate into and out of a reaction chamber of the semiconductor manufacturing machine. The actual vibration waveform is measured by a detecting device provided on the conveying member.
根據一些實施例,提供一種半導體製造系統,包括一傳送構件、一檢測裝置及一錯誤偵測及分類系統。傳送構件配置用於在一半導體製造廠內傳送一基板。檢測裝置設置於 傳送構件上。錯誤偵測及分類系統配置用於接收檢測裝置所量測到傳送構件移動至各選定位置時之一實際振動資料,及比較在其中一選定位置時所量測到之實際振動資料和關聯於該選定位置之一預期振動資料,並在實際振動資料與預期振動資料之間的一振幅差值超出一可接受的數值範圍時,發出一警示。 In accordance with some embodiments, a semiconductor fabrication system is provided that includes a transfer member, a detection device, and an error detection and classification system. The transfer member is configured to transport a substrate within a semiconductor manufacturing facility. The detecting device is disposed on the conveying member. The error detection and classification system is configured to receive an actual vibration data measured by the detecting device when the transmitting member moves to each selected position, and compare the actual vibration data measured at one of the selected positions and associated with the A warning is issued when one of the selected positions is expected to vibrate and an amplitude difference between the actual vibration data and the expected vibration data exceeds an acceptable value range.
以上雖然詳細描述了實施例及它們的優勢,但應該理解,在不背離所附申請專利範圍限定的本揭露的精神和範圍的情況下,對本揭露可作出各種變化、替代和修改。此外,本申請的範圍不旨在限制於說明書中所述的製程、機器、製造、物質組成、工具、方法和步驟的特定實施例。作為本領域的普通技術人員將容易地從本揭露中理解,根據本揭露,可以利用現有的或今後將被開發的、執行與在本揭露所述的對應實施例基本相同的功能或實現基本相同的結果的製程、機器、製造、物質組成、工具、方法或步驟。因此,所附申請專利範圍旨在將這些製程、機器、製造、物質組成、工具、方法或步驟包括它們的範圍內。此外,每一個申請專利範圍構成一個單獨的實施例,且不同申請專利範圍和實施例的組合都在本揭露的範圍內。 The embodiments and their advantages are described in detail above, and it is understood that various changes, substitutions and modifications may be made in the present disclosure without departing from the spirit and scope of the disclosure. Further, the scope of the present application is not intended to be limited to the specific embodiments of the process, the machine, the manufacture, the material composition, the tool, the method and the steps described in the specification. It will be readily apparent to those skilled in the art from this disclosure that, in accordance with the present disclosure, substantially the same functions or implementations as those of the corresponding embodiments described herein may be utilized. The resulting process, machine, manufacturing, material composition, tool, method or procedure. Therefore, the scope of the appended claims is intended to cover such processes, machines, manufacture, compositions of matter, tools, methods or steps. In addition, each patent application scope constitutes a separate embodiment, and combinations of different application patent scopes and embodiments are within the scope of the disclosure.
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