TW201910490A - Fluorescent substance, production method thereof, fluorescent substance sheet, and lighting device - Google Patents

Fluorescent substance, production method thereof, fluorescent substance sheet, and lighting device Download PDF

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TW201910490A
TW201910490A TW107123681A TW107123681A TW201910490A TW 201910490 A TW201910490 A TW 201910490A TW 107123681 A TW107123681 A TW 107123681A TW 107123681 A TW107123681 A TW 107123681A TW 201910490 A TW201910490 A TW 201910490A
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diffraction
phosphor powder
peak
intensity
phosphor
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八木橋和弘
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日商迪睿合股份有限公司
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    • CCHEMISTRY; METALLURGY
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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/62Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

Provided is a phosphor which is represented by general formula (1) and which contains at least a fluorescent substance that satisfies conditions (1)-(3). General formula (1): (BaySr1-y)1-xGa2S4:Eux (in general formula (1), 0.025 ≤ x ≤ 0.20 and 0.15 ≤ y ≤ 0.49 are satisfied). Condition (1): The maximum peak of the diffraction intensity in an XRD pattern is a diffraction peak that appears at a diffraction angle 2[Theta]=23.7 DEG to 24.1 DEG and is attributed to the (422) plane of SrGa2S4. Condition (2): The second highest peak of the diffraction intensity appears at a diffraction angle 2[Theta]=38.1 DEG to 38.5 DEG and is attributed to the (444) plane of SrGa2S4. Condition (3): Diffraction peaks having a relative intensity of 5-20% of the maximum peak of the diffraction intensity appear at a diffraction angle 2[Theta]=30.0 DEG to 30.4 DEG.

Description

螢光粉及其製造方法,螢光粉片及照明裝置Fluorescent powder and its manufacturing method, fluorescent powder sheet and lighting device

本發明係關於一種螢光粉及其製造方法,螢光粉片及照明裝置。The invention relates to a fluorescent powder and a manufacturing method thereof, a fluorescent powder sheet and a lighting device.

以往低價位的電視或是顯示器當中所用的偽白色LED係使用黃色螢光粉YAG:Ce。此方式並不適合紅色及綠色的濾色器(color filter),因為降低了綠色及紅色的色純度。In the past, the pseudo white LED used in low-priced TVs or monitors used yellow fluorescent powder YAG:Ce. This method is not suitable for red and green color filters because it reduces the color purity of green and red.

另一方面,近年液晶電視與顯示器中追求廣色域。然而,以前述方式會導致綠色與紅色的色純度變低,並使色域變窄。而使用了適合濾色器透光特性的綠色發光螢光粉與紅色發光螢光粉的三波長型白色LED來取代黃色螢光粉,在拉寬色域(廣色域化)上較為有利。On the other hand, in recent years, LCD TVs and displays have pursued a wide color gamut. However, in the foregoing manner, the color purity of green and red is lowered, and the color gamut is narrowed. Instead of the yellow phosphor, a three-wavelength white LED suitable for the green light-emitting phosphor of the color filter and the red-emitting phosphor is used, which is advantageous in widening the color gamut (wide color gamut).

作為綠色發光螢光粉,SrGa2 S4 :Eu螢光粉廣為人知。SrGa2 S4 :Eu係以近紫外~藍色波段的光來激發,因此做為激發藍色LED用的綠色發光螢光粉而受到注意。 此外也有人提案關於SrGa2 S4 :Eu螢光粉的技術,例如目的為提高內部量子效率的SrGa2 S4 :Eu螢光粉;或者是MGa2 S4 :Eu螢光粉(M=鋇(Ba)、(鍶)Sr或/及(鈣)Ca)(例如參照專利文獻1與2)。As a green light-emitting phosphor, SrGa 2 S 4 :Eu phosphor powder is widely known. Since SrGa 2 S 4 :Eu is excited by light in the near-ultraviolet to blue-wavelength, it has been noted as a green-emitting phosphor for exciting blue LEDs. In addition it was also proposals on SrGa 2 S 4: Eu phosphor of the art, for example, the purpose of improving the internal quantum efficiency of SrGa 2 S 4: Eu phosphor; or MGa 2 S 4: Eu phosphor (M = Ba (Ba), (锶) Sr or/and (calcium) Ca) (for example, refer to Patent Documents 1 and 2).

為了實現廣色域的三波長型LED,就必須同時具有高亮度且色純度高的綠色發光螢光粉。因此尋求具有高亮度且色純度高的綠色發光螢光粉。In order to realize a three-wavelength type LED of a wide color gamut, it is necessary to have a green luminescent phosphor having high luminance and high color purity. Therefore, green luminescent phosphors having high brightness and high color purity are sought.

[先前技術文獻] [專利文獻] [專利文獻1] 日本專利4343267號公報 [專利文獻2] 日本專利4708507號公報[Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent No. 4343267 (Patent Document 2) Japanese Patent No. 4708507

[本發明欲解決問題] 本發明的課題為:解決習知技術中的前述各問題,並且達成以下述目的。也就是說,本發明的目的為提供具有高亮度且高色純度的綠色發光螢光粉及其製造方法,以及具有該螢光粉的螢光粉片,以及具有該螢光粉片的照明裝置。[Problems to be Solved by the Invention] An object of the present invention is to solve the above-described problems in the prior art and achieve the following objects. That is, an object of the present invention is to provide a green light-emitting phosphor having high brightness and high color purity, a method of manufacturing the same, a phosphor powder sheet having the same, and a lighting device having the same .

[為解決問題之手段]   以下為作為解決前述問題的手段,即: <1>一種螢光粉,其特徵為:至少包含如下通式(1)所示,且滿足下述條件(1)~(3)的螢光物質,   (Bay Sr1-y )1-x Ga2 S4 :Eux 通式(1)   惟,該通式(1)當中,0.025≦ x ≦ 0.20,且0.15≦ y ≦ 0.49。  條件(1):XRD圖形的繞射強度的最大峰為出現於繞射角2θ=23.7~24.1°,回歸於SrGa2 S4 的(422)面的繞射峰;  條件(2):繞射強度第二的峰為出現於繞射角2θ=38.1~38.5°,回歸於SrGa2 S4 (444)面的繞射峰;  條件(3):於繞射角2θ=30.0~30.4°上具有相對該繞射強度的最大峰的相對強度為其5~20%的繞射峰。 <2>如前述<1>所述之螢光粉,其中,該螢光物質的基於CIE1931表色系統的y值為0.687以上。 <3>如前述<1>~<2>中任一項所述之螢光粉,其中,該螢光物質的內部量子效率為0.64以上。 <4>一種螢光粉片,其特徵為具有螢光粉層,該螢光粉層含有前述<1>~<3>中任一項所述的螢光粉,以及紅色螢光粉。 <5>一種照明裝置,其特徵為具有前述<4>所述之螢光粉片。 <6>製造前述<1>~<3>中任一項所述之螢光粉的螢光粉製造方法,其特徵為包含:析出沉澱製程,將用於溶解鋇化合物、鍶化合物及銪化合物且含有粉末鎵化合物的第一液與含有亞硫酸鹽的第二液進行混和,獲得沉澱物,該沉澱物為含有亞硫酸鋇、亞硫酸鍶及亞硫酸銪的析出物與該粉末鎵化合物的混合物。 <7>如前述<6>所述之螢光粉的製造方法,其中,還包含燒成製程,於包含硫化氫氛圍下燒成該沉澱物。[Means for Solving the Problems] The following is a means for solving the above problems: <1> A phosphor powder comprising at least the following formula (1) and satisfying the following condition (1) to (3) Fluorescent substance, (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x Formula (1) However, in the formula (1), 0.025 ≦ x ≦ 0.20, and 0.15 ≦ y ≦ 0.49. Condition (1): The maximum peak of the diffraction intensity of the XRD pattern is a diffraction peak appearing at the diffraction angle 2θ=23.7 to 24.1°, which is returned to the (422) plane of SrGa 2 S 4 ; Condition (2): Diffraction The second peak of the intensity is a diffraction peak appearing at a diffraction angle of 2θ=38.1 to 38.5° and returning to the SrGa 2 S 4 (444) plane; Condition (3): having a diffraction angle of 2θ=30.0 to 30.4° The relative intensity of the largest peak relative to the diffraction intensity is a diffraction peak of 5 to 20%. <2> The phosphor powder according to the above <1>, wherein the y value of the fluorescent substance based on the CIE1931 color system is 0.687 or more. The phosphor powder according to any one of the above aspects, wherein the fluorescent material has an internal quantum efficiency of 0.64 or more. <4> A phosphor powder sheet comprising a phosphor powder layer, wherein the phosphor powder layer contains the phosphor powder according to any one of <1> to <3>, and a red phosphor powder. <5> A lighting device comprising the phosphor powder sheet according to <4> above. The method for producing a phosphor powder according to any one of the above-mentioned items, wherein the method of producing a phosphor powder comprises a precipitation precipitation process for dissolving a cerium compound, a cerium compound, and a cerium compound. And the first liquid containing the powdered gallium compound is mixed with the second liquid containing sulfite to obtain a precipitate which is a precipitate containing barium sulfite, barium sulfite and barium sulfite and the powdered gallium compound mixture. The method for producing a phosphor according to the above <6>, which further comprises a baking process for firing the precipitate under a hydrogen sulfide atmosphere.

[發明功效]   根據本發明可解決習知技術中的前述各問題,並且達成前述目的,可提供具有高亮度且高色純度的綠色發光螢光粉,及其製造方法,以及具有該螢光粉的螢光粉片,以及具有該螢光粉片的照明裝置。[Effect of the Invention] According to the present invention, the aforementioned problems in the prior art can be solved, and the above object can be attained, and a green light-emitting phosphor powder having high brightness and high color purity can be provided, and a method of manufacturing the same, and having the same a phosphor powder sheet, and a lighting device having the phosphor powder sheet.

(螢光粉)   本發明的螢光粉至少含有螢光物質,且因應所需含有包覆層等其他成分。(Fluorescent Powder) The phosphor powder of the present invention contains at least a fluorescent substance and contains other components such as a coating layer as needed.

(螢光物質) 該螢光物質可以下述通式(1)表示: (Bay Sr1-y )1-x Ga2 S4 :Eux 通式(1) 惟,該通式(1)當中,0.025≦ x ≦ 0.20,且0.15≦ y ≦ 0.49。(fluorescent substance) The fluorescent substance can be represented by the following formula (1): (Ba y Sr 1-y ) 1-x Ga 2 S 4 : Eu x Formula (1) However, the formula (1) Among them, 0.025 ≦ x ≦ 0.20, and 0.15 ≦ y ≦ 0.49.

該螢光物質滿足下列條件(1)~(3)。 條件(1):XRD圖形的繞射強度的最大峰為出現於繞射角2θ=23.7~24.1°,回歸於SrGa2 S4 的(422)面的繞射峰。 條件(2):繞射強度第二的峰為出現於繞射角2θ=38.1~38.5°,回歸於SrGa2 S4 (444)面的繞射峰。 條件(3):於繞射角2θ=30.0~30.4°上,具有相對該繞射強度的最大峰的相對強度為其5~20%的繞射峰。This fluorescent substance satisfies the following conditions (1) to (3). Condition (1): The maximum peak of the diffraction intensity of the XRD pattern is a diffraction peak which appears at the diffraction angle 2θ=23.7 to 24.1° and returns to the (422) plane of SrGa 2 S 4 . Condition (2): The second peak of the diffraction intensity is a diffraction peak which appears at the diffraction angle 2θ=38.1 to 38.5° and returns to the SrGa 2 S 4 (444) plane. Condition (3): The diffraction intensity of the maximum peak with respect to the diffraction intensity is a diffraction peak of 5 to 20% at the diffraction angle 2θ=30.0 to 30.4°.

該螢光物質當中,鎵/(銪+鋇+鍶)比(即Ga/(Eu+Ba+Sr) 元素比)以1.80~2.50為佳,以1.90~2.30為較佳。Among the phosphors, a gallium/(铕+钡+锶) ratio (i.e., a ratio of Ga/(Eu+Ba+Sr) element) is preferably 1.80 to 2.50, and preferably 1.90 to 2.30.

作為該螢光物質的發光峰波長,可舉例例如529nm~535nm。The luminescence peak wavelength of the fluorescent substance is, for example, 529 nm to 535 nm.

作為該螢光物質的發光峰強度(對YAG比),可舉例例如2.46~3.64。The luminescence peak intensity (for the YAG ratio) of the fluorescent substance can be, for example, 2.46 to 3.64.

作為該螢光物質的測試材料吸收率,可舉例例如64%~82%。The absorbance of the test material of the fluorescent substance can be, for example, 64% to 82%.

基於該螢光物質的CIE1931表色系統的x值,以0.271以下為佳。 基於該螢光物質的CIE1931表色系統的x值,可舉例例如0.210~0.271,或是0.235~0.271。The value of x of the CIE1931 color system based on the fluorescent substance is preferably 0.271 or less. The x value of the CIE1931 color system based on the fluorescent substance can be, for example, 0.210 to 0.271 or 0.235 to 0.271.

作為基於該螢光物質的CIE1931表色系統的y值,以0.687以上為佳。 作為基於該螢光物質的CIE1931表色系統的y值,可舉例例如0.687~0.710,或是0.687~0.695。The y value of the CIE1931 color system based on the fluorescent material is preferably 0.687 or more. The y value of the CIE1931 color system based on the fluorescent substance is, for example, 0.687 to 0.710 or 0.687 to 0.695.

作為該螢光物質的內部量子效率,以0.64(64%)以上為佳。 作為該螢光物質的內部量子效率,可舉例例如0.64(64%)~0.80(80%)。The internal quantum efficiency of the fluorescent material is preferably 0.64 (64%) or more. The internal quantum efficiency of the fluorescent substance is, for example, 0.64 (64%) to 0.80 (80%).

作為該螢光物質的外部量子效率,以0.40(40%)以上為佳。 作為該螢光物質的外部量子效率,可舉例例如0.40(40%)~0.65(65%)。The external quantum efficiency of the fluorescent material is preferably 0.40 (40%) or more. As the external quantum efficiency of the fluorescent substance, for example, 0.40 (40%) to 0.65 (65%) can be exemplified.

作為該螢光物質的亮度(對YAG比),可舉例例如124%~187%。As the luminance (for the YAG ratio) of the fluorescent material, for example, 124% to 187% can be exemplified.

作為該螢光物質的發光半值全寬(full width at half maximum),可舉例例如48nm~50nm。The full width at half maximum of the fluorescent substance is, for example, 48 nm to 50 nm.

上述各特性例如可以下述方法測量。Each of the above characteristics can be measured, for example, by the following method.

[發光(PL)光譜的測量] 使用分光螢光光度計FP-6500(日本分光社製)的積分球(integrating sphere)選項,測量PL光譜(光激發光譜,photoluminescence spectrum)當中的發光峰波長、發光峰強度,以及發光半值全寬。發光峰強度係表示以化成Optronics公司製的一般的YAG螢光粉P46-Y3材料的PL光譜資料為基準下的相對值。[Measurement of the luminescence (PL) spectrum] The luminescence peak wavelength in the PL spectrum (photoluminescence spectrum) is measured using an integrating sphere option of a spectrofluorometer FP-6500 (manufactured by JASCO Corporation). The intensity of the luminescence peak, and the full width of the luminescence half value. The luminescence peak intensity indicates a relative value based on the PL spectrum data of a general YAG phosphor powder P46-Y3 material manufactured by Optronics.

[各種轉換效率的計算] 作為螢光粉的轉換效率,計算出:吸收激發光的效率(吸收率);將所吸收的激發光轉換為螢光之效率(內部量子效率);以及將此等值的積,即將激發光轉換為螢光的效率(外部量子效率)。發光特性係使用分光螢光光度計FP-6500(日本分光社製)的積分球選項來測量。於專用槽內填充螢光粉粉末,照射波長450nm的藍色激發光,測量螢光光譜。將其結果,使用分光螢光度計中內附的量子效率計算軟體來計算量子效率。[Calculation of various conversion efficiencies] As the conversion efficiency of the phosphor powder, the efficiency (absorption rate) of absorbing the excitation light, the efficiency of converting the absorbed excitation light into fluorescence (internal quantum efficiency), and the like are calculated; The product of the values, the efficiency at which the excitation light is converted to fluorescence (external quantum efficiency). The light-emitting characteristics were measured using an integrating sphere option of a spectrofluorometer FP-6500 (manufactured by JASCO Corporation). Fluorescent powder powder was filled in a dedicated tank, and blue excitation light having a wavelength of 450 nm was irradiated to measure a fluorescence spectrum. As a result, the quantum efficiency was calculated using the quantum efficiency calculation software included in the spectrofluorometer.

[結晶性的評測] 基於X光繞射的測量來進行結晶性的評測。使用粉末X光繞射計(PANalytical公司製的X’ Pert PRO),測量於CuKα線的X光繞射(XRD)圖譜當中繞射峰的位置(2θ)及半值寬。以內附的解析軟體的找峰(peak search)功能進行擬合(fitting),解析螢光粉的XRD圖譜的特徵。[Evaluation of Crystallinity] Evaluation of crystallinity was performed based on measurement of X-ray diffraction. The position (2θ) and the half-value width of the diffraction peak in the X-ray diffraction (XRD) pattern of the CuKα line were measured using a powder X-ray diffraction meter (X' Pert PRO manufactured by PANalytical Co., Ltd.). Fitting is performed by the peak search function of the attached analysis software, and the characteristics of the XRD pattern of the fluorescent powder are analyzed.

<包覆層> 作為本發明的螢光粉的更進一步的較佳態樣,可舉例例如:由該螢光物質的表面受到作為包覆層之含氟樹脂的包覆而成的螢光粉。 藉著提高螢光物質的耐濕性、耐水性,可防止因水等所導致的加水分解反應,並防止發光特性變差。 為了提升螢光物質的耐濕性、耐水性,較佳地,可用含氟樹脂來覆蓋該螢光物質的表面。如此一來,可防止該螢光物質中因加水分解等導致的劣化,並抑制發光峰強度等的發光特性之劣化。<Cover Layer> As a further preferable aspect of the phosphor powder of the present invention, for example, a phosphor powder coated with a fluorine-containing resin as a coating layer on the surface of the phosphor material can be exemplified. . By improving the moisture resistance and water resistance of the fluorescent substance, it is possible to prevent the hydrolysis reaction due to water or the like and to prevent deterioration of the light-emitting characteristics. In order to improve the moisture resistance and water resistance of the fluorescent substance, it is preferred to cover the surface of the fluorescent substance with a fluorine-containing resin. In this way, deterioration of the fluorescent material due to hydrolysis or the like can be prevented, and deterioration of the light-emitting characteristics such as the intensity of the luminescence peak can be suppressed.

根據螢光物質的組成、結晶構造等的差異,使得發光峰的波長、發光半值全寬、發光峰強度、內部量子效率、外部量子效率等的各種物性的值也有所差異。 然而,本發明的螢光粉藉著依後述本發明的製造方法進行製造,可成為具有新穎結晶結構,具有高亮度且色純度高的綠色發光螢光粉。Depending on the composition of the fluorescent substance, the crystal structure, and the like, the values of various physical properties such as the wavelength of the luminescence peak, the full width at half of the luminescence, the intensity of the luminescence peak, the internal quantum efficiency, and the external quantum efficiency are also different. However, the phosphor powder of the present invention can be produced by the production method of the present invention described later, and can be a green light-emitting phosphor having a novel crystal structure and having high luminance and high color purity.

(螢光粉的製造方法) 本發明的螢光粉的製造方法至少包含析出沉澱製程,並且更可因應需要而包含燒成製程、包覆製程等的其他製程。 該螢光粉的製造方法為製造本發明的螢光粉的方法。(Manufacturing Method of Fluorescent Powder) The method for producing the phosphor powder of the present invention includes at least a precipitation precipitating process, and further includes other processes such as a baking process and a coating process as needed. The method for producing the phosphor powder is a method for producing the phosphor powder of the present invention.

<析出沉澱製程> 作為該析出沉澱製程,只要是將第一液與第二液混和而獲得沉澱物的製程即可,並不需要特別的限制,並且可因應目的而適當地進行選擇。<Precipitation and Sedimentation Process> The precipitation and precipitation process is not particularly limited as long as it is a process of mixing the first liquid and the second liquid to obtain a precipitate, and can be appropriately selected depending on the purpose.

<<第一液>> 該第一液係將鋇化合物、鍶化合物及銪化合物溶解,且含有粉末鎵化合物。<<First Liquid>> This first liquid system dissolves a cerium compound, a cerium compound, and a cerium compound, and contains a powdered gallium compound.

作為獲得該第一液的方法,可舉例例如將鋇化合物、鍶化合物及銪化合物溶解於水,然後混和粉末鎵化合物於其中之方法。As a method of obtaining the first liquid, for example, a method in which a cerium compound, a cerium compound, and a cerium compound are dissolved in water, and then a powdered gallium compound is mixed therein can be exemplified.

作為該鋇化合物,例如可使用硝酸鋇[Ba(NO3)2 ]、氧化鋇[BaO]、溴化鋇[BaBr2 ・xH2 O]、氯化鋇[BaCl2 ・xH2 O]、醋酸鋇[Ba(CH3 COO)2 ]、碘化鋇[BaI2 ・xH2 O]、羥化鋇[Ba(OH)2 ]、硫化鋇[BaS]等。As the ruthenium compound, for example, barium nitrate [Ba(NO 3 ) 2 ], barium oxide [BaO], barium bromide [BaBr 2 · xH 2 O], barium chloride [BaCl 2 · xH 2 O], acetic acid can be used.钡 [Ba(CH 3 COO) 2 ], cesium iodide [BaI 2 · xH 2 O], cesium hydroxide [Ba(OH) 2 ], strontium sulfide [BaS], and the like.

作為該鍶化合物,例如可使用硝酸鍶[Sr(NO3)2 ]、氧化鍶[SrO]、溴化鍶[Sr Br2 ・xH2 O]、氯化鍶[SrCl2 ・xH2 O]、碳酸鍶[SrCO3 ]、乙二酸鍶[SrC2O4 ・H2 0]、氟化鍶[SrF2 ]、碘化鍶[SrI2 ・xH2 0]、硫酸鍶[SrSO4 ]、羥化鍶[Sr(OH)2 ・xH2 O]、硫化鍶[SrS]等。As the ruthenium compound, for example, strontium nitrate [Sr(NO 3) 2 ], strontium oxide [SrO], strontium bromide [Sr Br 2 · xH 2 O], cesium chloride [SrCl 2 · xH 2 O], Barium carbonate [SrCO 3 ], barium oxalate [SrC2O 4 · H 2 0], barium fluoride [SrF 2 ], barium iodide [SrI 2 · xH 2 0], barium sulfate [SrSO 4 ], barium hydroxide [Sr(OH) 2 · xH 2 O], strontium sulfide [SrS], and the like.

作為該銪化合物,例如可使用硝酸銪[Eu(NO3 )3 ・xH2 O]、乙二酸銪[Eu(C2 O4 )3 ・xH2 O]、碳酸銪[Eu2 (CO3 )3 ・xH2 O]、硫酸銪[Eu2 (SO4 )3 ]、氯化銪[EuCl3 ・xH2 O]、氟化銪[EuF3 ]、氫化銪[EuHx ]、硫化銪[EuS]、三異丙氧基銪[Eu(O-i-C3 H7 )3 ]、醋酸銪[Eu(O-CO-CH3 )3 ]等。As the ruthenium compound, for example, ruthenium nitrate [Eu(NO 3 ) 3 · xH 2 O], bismuth oxalate [Eu(C 2 O 4 ) 3 · xH 2 O], cesium carbonate [Eu 2 (CO 3 ) can be used. 3 ·xH 2 O], barium sulfate [Eu 2 (SO 4 ) 3 ], barium chloride [EuCl 3 · xH 2 O], barium fluoride [EuF 3 ], hydrogenated hydrazine [EuH x ], strontium sulfide [ EuS], triisopropoxy fluorene [Eu(OiC 3 H 7 ) 3 ], cerium acetate [Eu(O-CO-CH 3 ) 3 ], and the like.

作為該粉末鎵化合物,例如可使用氧化鎵[Ga2 O3 ]、硫酸鎵[Ga2 (SO4 )3 ・xH2 O]、硝酸鎵[Ga(NO3 )3 ・xH2 O]、溴化鎵[GaBr3 ]、氯化鎵[GaCl3 ]、碘化鎵[GaI3 ]、硫化鎵(II) [GaS]、硫化鎵(III) [Ga2 S3 ]、氧(氫氧)化鎵[GaOOH]等。As the powdered gallium compound, for example, gallium oxide [Ga 2 O 3 ], gallium sulfate [Ga 2 (SO 4 ) 3 · xH 2 O], gallium nitrate [Ga(NO 3 ) 3 · xH 2 O], bromine can be used. Gallium [GaBr 3 ], gallium chloride [GaCl 3 ], gallium iodide [GaI 3 ], gallium sulfide (II) [GaS], gallium sulfide (III) [Ga 2 S 3 ], oxygen (hydrogen) Gallium [GaOOH] and the like.

作為該第一液當中的鋇(Ba)、鍶(Sr)、銪(Eu)、鎵(Ga)的含有量,並不需要特別的限制,可依據目的而作適當的選擇。The content of barium (Ba), strontium (Sr), europium (Eu), and gallium (Ga) in the first liquid is not particularly limited, and may be appropriately selected depending on the purpose.

<<第二液>> 該第二液含有亞硫酸鹽。 作為獲得該第二液的方法,可舉例例如:將亞硫酸鹽溶解於水之方法。 作為該第二液當中的亞硫酸鹽的含有量,可不特別限制,可根據目的而適當地進行選擇。<<Second liquid>> The second liquid contains sulfite. As a method of obtaining the second liquid, for example, a method of dissolving sulfite in water can be exemplified. The content of the sulfite in the second liquid is not particularly limited, and may be appropriately selected depending on the purpose.

作為該亞硫酸鹽,可舉例例如:亞硫酸銨、亞硫酸鈉、亞硫酸鉀等。As the sulfite, for example, ammonium sulfite, sodium sulfite, potassium sulfite, or the like can be exemplified.

作為該第一液與該第二液的混和比率,可不特別限制,可根據目的而適當地進行選擇,可舉例例如:以相對於該第一液中銪、鋇及鍶的合計莫耳量而言,亞硫酸鹽的莫耳量為1.00倍~1.50倍之方式進行混和。The mixing ratio of the first liquid and the second liquid is not particularly limited, and may be appropriately selected depending on the purpose, and may be, for example, a molar amount of lanthanum, cerium, and lanthanum in the first liquid. In other words, the molar amount of the sulfite is 1.00 to 1.50 times.

<<沉澱物>> 該沉澱物為析出物與該粉末鎵化合物的混和物。 該析出物含有亞硫酸鋇、亞硫酸鍶及亞硫酸銪。 該第一液溶解了鋇化合物、鍶化合物及銪化合物,並於其中成為均勻狀態,於該析出物亦然,亞硫酸鋇、亞硫酸鍶、亞硫酸銪均勻地混合於其中。 此外,該沉澱物當中,該粉末鎵化合物、亞硫酸鋇、亞硫酸鍶及亞硫酸銪為均勻地混合。<<Precipitate>> This precipitate is a mixture of a precipitate and the powdered gallium compound. The precipitate contains barium sulfite, barium sulfite and barium sulfite. The first liquid dissolves the cerium compound, the cerium compound, and the cerium compound, and is in a uniform state therein, and in the precipitate, the cerium sulfite, the sulfite sulfite, and the sulfite sulfite are uniformly mixed therein. Further, among the precipitates, the powdered gallium compound, barium sulfite, barium sulfite and barium sulfite are uniformly mixed.

此外,該沉澱物在供作後述燒成製程之前先經過清洗為佳。清洗的條件並不特別限制,可因應目的而適當地作選擇,可舉例例如以水清洗到傳導率為0.1mS/cm以下。Further, it is preferred that the precipitate is washed before being subjected to a firing process which will be described later. The conditions for the washing are not particularly limited, and may be appropriately selected depending on the purpose, and may be, for example, washed with water to a conductivity of 0.1 mS/cm or less.

<燒成製程> 作為燒成製程,只要是在含有硫化氫氛圍下燒成該沉澱物的製程即可,不須特別限制,可依據目的而適當地進行選擇。 作為該燒成製程的燒成溫度,可舉例例如:900~950℃。 作為該燒成製程的燒成時間,可舉例例如:1小時~5小時。 作為該燒成製程當中氛圍環境中的硫化氫比例,並無特別的限制,可因應目的而適當地選擇,可舉例例如:供給0.1L/分~0.5L/分的量的硫化氫至燒成氛圍環境中。<Sintering Process> The firing process is not particularly limited as long as it is a process for firing the precipitate in a hydrogen sulfide-containing atmosphere, and may be appropriately selected depending on the purpose. The firing temperature of the baking process can be, for example, 900 to 950 °C. The baking time of this baking process can be, for example, 1 hour to 5 hours. The proportion of hydrogen sulfide in the atmosphere in the firing process is not particularly limited, and may be appropriately selected depending on the purpose, and for example, hydrogen sulfide is supplied in an amount of 0.1 L/min to 0.5 L/min to firing. In an ambience.

藉由該燒成製程可得到本發明的該螢光粉當中的該螢光物質。The phosphor material in the phosphor powder of the present invention can be obtained by the firing process.

<包覆製程> 作為該包覆製程,只要是藉由包覆層來將依該燒成製程所得螢光物質的表面包覆的製程即可,並無特別的限制,可根據目的而適當地進行選擇。 該包覆製程可於例如於非水性氛圍環境下使含氟樹脂包覆。<Coating Process> The coating process is not particularly limited as long as it is a process of coating the surface of the fluorescent material obtained by the baking process by a coating layer, and may be appropriately selected according to the purpose. Make a choice. The coating process can coat the fluorine-containing resin, for example, in a non-aqueous atmosphere.

例如:使用於含有乙氧基九氟丁烷(ethoxy nonafluorobutane)等的氫氟醚(hydrofluoro ether)類的氟的溶媒加上含氟樹脂而成的含氟樹脂溶液,並將前述獲得的螢光物質混入該含氟樹脂溶液,以攪拌滾筒等混和。接著,藉由吸附過濾回收粉末,以80℃~100℃程度的溫度,0.5小時~1.5小時使該粉末乾燥。藉此可獲得於表面具有含氟樹脂而成包覆層的螢光粉。For example, it is used in a fluorine-containing resin solution containing a fluorine-containing solvent of a hydrofluoroether such as ethoxy nonafluorobutane, and a fluorine-containing resin solution, and the obtained fluorescent light is obtained. The substance is mixed into the fluorine-containing resin solution, and mixed by a stirring drum or the like. Next, the powder is recovered by adsorption filtration, and the powder is dried at a temperature of about 80 ° C to 100 ° C for 0.5 to 1.5 hours. Thereby, a phosphor powder having a coating layer of a fluorine-containing resin on the surface can be obtained.

(螢光粉片) 本發明的螢光粉片至少具有螢光粉層,並且還可依據所需而具有水蒸氣阻隔膜等的其他部件。(Fluorescent Powder Sheet) The phosphor powder sheet of the present invention has at least a phosphor powder layer, and may have other members such as a water vapor barrier film as needed.

<螢光粉層> 該螢光粉層至少含有本發明的該螢光粉及紅色螢光粉,並且還可依據所需而含有樹脂等其他成分。 該螢光粉層為例如:於層狀的該樹脂中分散著存有本發明的螢光粉;以及紅色螢光粉。<Fluorescent Powder Layer> The phosphor powder layer contains at least the phosphor powder and the red phosphor powder of the present invention, and may contain other components such as a resin as needed. The phosphor layer is, for example, a phosphor powder of the present invention in which a layered resin is dispersed, and a red phosphor powder.

<紅色螢光粉> 作為紅色螢光粉,可不須特別限定,可根據目的而進行適當地選擇。例如,可依據螢光粉的種類、吸收光譜波段、發光波段等,由硫化物型螢光粉、氧化物型螢光粉、氮化物型螢光粉、氟化物型螢光粉等中,組合一種或兩種以上來使用。<Red Fluorescent Powder> The red fluorescent powder is not particularly limited and may be appropriately selected depending on the purpose. For example, it may be composed of a sulfide type phosphor powder, an oxide type phosphor powder, a nitride type phosphor powder, a fluoride type phosphor powder, etc. depending on the type of the phosphor powder, the absorption spectrum band, the light emission band, and the like. One or two or more are used.

作為紅色螢光粉的具體例,可舉例例如:(ME:Eu)S、(M:Sm)x (Si, Al)12 (O, N)16 、ME2 Si5 N8 :Eu、(ME:Eu)SiN2 、(ME:Eu)AlSiN3 、(ME:Eu)3 SiO5 、(Ca:Eu)SiN2 、(Ca:Eu)AlSiN3 、Y2 O3 :Eu、YVO4 :Eu、Y(P, V)O4 :Eu、3.5MgO・0.5MgF2 ・Ge2 :Mn、CaSiO3 :Pb, Mn、Mg6 AsO11 :Mn、(Sr, Mg)3 (PO4 )3 :Sn、La2 O2 S:Eu、Y2 O2 S:Eu等。此等的紅色螢光粉當中,較佳為使用可實現廣色域的CaS:Eu或是(Ba, Sr)3 SiO5 :Eu。於此,「ME」意指由Ca、Cr及Ba所構成之群組所選擇的至少一種類的原子;「M」為意指由Li、Mg及Ca所構成之群組所選擇的至少一種類的原子。此外「:」的前方表示主體,「:」的後方表示活化劑。Specific examples of the red phosphor powder include, for example, (ME:Eu)S, (M:Sm) x (Si, Al) 12 (O, N) 16 , ME 2 Si 5 N 8 :Eu, (ME :Eu)SiN 2 , (ME:Eu)AlSiN 3 , (ME:Eu) 3 SiO 5 , (Ca:Eu)SiN 2 , (Ca:Eu)AlSiN 3 ,Y 2 O 3 :Eu,YVO 4 :Eu Y(P, V)O 4 :Eu, 3.5MgO·0.5MgF 2 ·Ge 2 :Mn, CaSiO 3 :Pb, Mn, Mg 6 AsO 11 :Mn, (Sr, Mg) 3 (PO 4 ) 3 : Sn, La 2 O 2 S: Eu, Y 2 O 2 S: Eu, and the like. Among these red phosphors, it is preferred to use CaS:Eu or (Ba,Sr) 3 SiO 5 :Eu which can realize a wide color gamut. Here, "ME" means at least one atom selected from the group consisting of Ca, Cr, and Ba; "M" means at least one selected from the group consisting of Li, Mg, and Ca. The kind of atom. In addition, the front of ":" indicates the main body, and the rear of ":" indicates the activator.

<<樹脂>> 作為該樹脂,可舉例例如:聚烯烴共聚物,光固化性(甲基)丙烯酸樹脂的固化物等。<<Resin>> Examples of the resin include a polyolefin copolymer, a cured product of a photocurable (meth)acrylic resin, and the like.

作為該聚烯烴共聚物,可舉例如苯乙烯型共聚物或是其氫化物。作為此種苯乙烯型共聚物或是其氫化物,較佳可舉例例如:苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物或是其氫化物、苯乙烯-乙烯-伸丙基嵌段共聚物或是其氫化物。此等當中由透明度或是氣體阻隔性特點來看,又以使用苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物為佳。藉著使其含有聚烯烴共聚物,可得到良好的耐光性以及低吸水性。The polyolefin copolymer may, for example, be a styrene type copolymer or a hydrogenated product thereof. As such a styrene type copolymer or a hydride thereof, for example, a styrene-ethylene-butylene-styrene block copolymer or a hydride thereof, a styrene-ethylene-propylene block is preferably exemplified. Copolymer or its hydride. Among these, from the viewpoint of transparency or gas barrier properties, it is preferred to use a styrene-ethylene-butylene-styrene block copolymer. By containing a polyolefin copolymer, good light resistance and low water absorption can be obtained.

作為該光固化性(甲基)丙烯酸樹脂,可舉例例如:氨基甲酸乙酯(甲基) 丙烯酸酯、聚酯(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯等。此些當中,由光固化後的耐熱性觀點來看,較佳可使用氨基(甲基)丙烯酸酯。藉由使其含有光固化性(甲基)丙烯酸樹脂,可得到良好的耐光性以及低吸水性。Examples of the photocurable (meth)acrylic resin include urethane (meth) acrylate, polyester (meth) acrylate, and epoxy (meth) acrylate. Among these, an amino (meth) acrylate is preferably used from the viewpoint of heat resistance after photocuring. By containing a photocurable (meth)acrylic resin, good light resistance and low water absorbability can be obtained.

<水蒸氣阻隔膜> 作為該水蒸氣阻隔膜,可舉例例如:在PET(聚對苯二甲酸乙二酯,polyethylene terephthalate)等塑膠基板或膜的表面上,形成氧化鋁、氧化鎂、氧化矽等的金屬氧化物薄膜的氣體阻隔性膜等。此外,亦可使用PET/SiOx (氧化矽)/PET等的多層構造物。<Water vapor barrier film> As the water vapor barrier film, for example, alumina, magnesium oxide, or cerium oxide is formed on the surface of a plastic substrate or film such as PET (polyethylene terephthalate). A gas barrier film or the like of a metal oxide film. Further, a multilayer structure such as PET/SiO x (yttria)/PET can also be used.

於此,以圖來說明螢光粉片的一例。 圖1係為表示螢光粉片端部的構成例的概略剖面圖。此螢光粉片為螢光粉層11被第一水蒸氣阻隔膜12與第二水蒸氣阻隔膜13所夾持。Here, an example of the phosphor powder sheet will be described with reference to the drawings. Fig. 1 is a schematic cross-sectional view showing a configuration example of an end portion of a phosphor powder sheet. This phosphor powder sheet is such that the phosphor powder layer 11 is sandwiched by the first water vapor barrier film 12 and the second water vapor barrier film 13.

螢光粉層11含有:本發明的該螢光粉,其發出綠色螢光;以及紅色螢光粉,其藉由藍色激發光的照射以發出波長620~660nm的紅色螢光。螢光粉層11將照射到的藍色光轉換為白色光。The phosphor layer 11 contains: the phosphor powder of the present invention which emits green fluorescence; and a red phosphor which emits red fluorescence having a wavelength of 620 to 660 nm by irradiation of blue excitation light. The phosphor layer 11 converts the irradiated blue light into white light.

此外,作為本發明的該螢光粉之外的其他綠色發光螢光粉,亦可使用例如由:Zn2 SiO4 :Mn、Y3 Al5 O12 :Ce3+ 、(Y, Gd)Al3 (BO3 )4 :Tb3+ 、Ca3 Sc2 Si3 O12 :Ce、CaSc2 O4 :Ce、Ba3 Si6 O12 N2 :Eu、β-SiAlON(氮化矽鋁氧):Eu2+ 等中的其中一種或是組合兩種以上。Further, as the other green light-emitting phosphor other than the phosphor powder of the present invention, for example, Zn 2 SiO 4 : Mn, Y 3 Al 5 O 12 : Ce 3+ , (Y, Gd) Al may be used. 3 (BO 3 ) 4 : Tb 3+ , Ca 3 Sc 2 Si 3 O 12 :Ce, CaSc 2 O 4 :Ce, Ba 3 Si 6 O 12 N 2 :Eu, β-SiAlON (antimony aluminum nitride) : one of Eu 2+ or the like or a combination of two or more.

螢光粉層11係為將樹脂組成物予以成膜後之物,其中樹脂組成物含有粉末狀的本發明之螢光粉與紅色螢光粉。The phosphor layer 11 is a film obtained by forming a resin composition containing a powdery powder of the present invention and a red phosphor.

此外,圖1的螢光粉片當中,較佳地,第一水蒸氣阻隔膜12的端部與第二水蒸氣阻隔膜13的端部被覆蓋部件14封住,且覆蓋部件14具有1g/m2 /day以下的水蒸氣透過率。Further, among the phosphor powder sheets of Fig. 1, preferably, the end portion of the first water vapor barrier film 12 and the end portion of the second water vapor barrier film 13 are sealed by the covering member 14, and the covering member 14 has 1 g/ Water vapor transmission rate below m 2 /day.

作為覆蓋部件14,可使用於具1g/m2 /day以下的水蒸氣透過率的基材141上塗佈黏著劑142的黏著膠帶。作為基材141,可使用鋁箔等金屬箔或是水蒸氣阻隔膜12、13。鋁箔可使用有光澤的白鋁或是無光澤的黑鋁,如果需要在螢光粉片端部具有良好的色調,以使用白鋁為佳。此外,貼在水蒸氣阻隔膜上的覆蓋部件14的寬度W,由水蒸氣阻隔性或強度的觀點來看以1mm~10mm為佳,以1mm~5mm為較佳。根據由此結構構成的覆蓋部件14,可防止水蒸氣從水蒸氣阻隔膜的端部侵入至螢光粉層當中,並且可防止螢光粉層中的螢光粉劣化。As the covering member 14, an adhesive tape for applying the adhesive 142 to the base material 141 having a water vapor transmission rate of 1 g/m 2 /day or less can be applied. As the substrate 141, a metal foil such as an aluminum foil or water vapor barrier films 12 and 13 can be used. Aluminum foil can be made of glossy white aluminum or matt black aluminum. If it is necessary to have a good color tone at the end of the phosphor powder sheet, it is preferable to use white aluminum. Further, the width W of the covering member 14 attached to the water vapor barrier film is preferably from 1 mm to 10 mm, and preferably from 1 mm to 5 mm, from the viewpoint of water vapor barrier properties or strength. According to the covering member 14 having such a structure, it is possible to prevent water vapor from intruding into the phosphor layer from the end portion of the water vapor barrier film, and to prevent deterioration of the phosphor powder in the phosphor layer.

(照明裝置) 本發明的照明裝置具有本發明的該螢光粉片。 使用圖來說明本發明的照明裝置之一例。 圖2係為表示側光型照明裝置的概略剖面圖。如圖2所示,照明裝置具備:藍色LED31;導光板32,其使由側面入射的藍色LED31的藍色光擴散,並於表面導出均勻的光;螢光粉片33,其由藍色光獲得白色光;及光學薄膜34。此等構成所謂的「側光型背光」。(Lighting Device) The lighting device of the present invention has the phosphor powder sheet of the present invention. An example of a lighting device of the present invention will be described using a diagram. Fig. 2 is a schematic cross-sectional view showing a sidelight type illumination device. As shown in FIG. 2, the illuminating device includes a blue LED 31, and a light guide plate 32 that diffuses blue light of the blue LED 31 incident from the side surface and derives uniform light on the surface; the phosphor powder sheet 33 is made of blue light. Obtaining white light; and optical film 34. These constitute a so-called "sidelight type backlight".

關於藍色LED31,作為藍色發光元件,例如構成具有InGaN型的LED晶片的所謂「LED封裝件」。導光板32使從壓克力板等透明基板的端面所導入的光均勻地面發光。螢光粉片33為例如圖1所示的螢光粉片。含在螢光粉片33當中的螢光粉粉末,使用平均粒徑為數μm~數十μm之物。藉此可提升螢光粉片33的光散射效果。關於光學薄膜34,例如可為用於提升液晶顯示裝置清晰度的反射型偏光膜、擴散膜等所構成。The blue LED 31 is, for example, a so-called "LED package" having an InGaN-type LED chip as a blue light-emitting element. The light guide plate 32 causes light introduced from an end surface of a transparent substrate such as an acrylic plate to emit light uniformly on the ground. The phosphor powder sheet 33 is, for example, a phosphor powder sheet as shown in Fig. 1 . The phosphor powder contained in the phosphor powder sheet 33 is one having an average particle diameter of several μm to several tens μm. Thereby, the light scattering effect of the phosphor sheet 33 can be improved. The optical film 34 can be configured, for example, as a reflective polarizing film or a diffusion film for improving the sharpness of the liquid crystal display device.

此外,圖3係為表示直下型照明裝置的概略剖面圖。如圖3所示,照明裝置具備:基板42,其中二維地配置有藍色LED41;擴散板43,其使藍色LED41的藍色光擴散;螢光粉片33,其與基板42離間配置,且從藍色光獲得白色光;及光學薄膜34。此等構成所謂「直下型背光」。3 is a schematic cross-sectional view showing a direct type illumination device. As shown in FIG. 3, the illuminating device includes a substrate 42 in which a blue LED 41 is two-dimensionally arranged, a diffusing plate 43 that diffuses blue light of the blue LED 41, and a phosphor sheet 33 that is disposed apart from the substrate 42. And white light is obtained from blue light; and optical film 34. These constitute the so-called "direct type backlight".

關於藍色LED41,作為藍色發光元件,例如構成具有InGaN型的LED晶片的所謂「LED封裝件」。基板42係由利用了苯酚、環氧樹脂、聚醯亞胺聚等樹脂的玻璃布基材所構成,於基板42上,藍色LED41對應螢光粉片33的整面,以特定間距等間隔地作二維配置。此外,亦可因應所需,於基板42上的藍色LED41安裝面上施加反射處理。基板42與螢光粉片33之間配置為互相間隔10-50mm程度,照明裝置構成所謂的「遠程螢光粉結構」。基板42與螢光粉片33之間的空隙,藉由多個支撐柱或反射板予以支撐,設置為支撐柱或反射板於四方環繞著基板42與螢光粉片44所形成的空間。擴散板43為使來自藍色LED41的放射光擴散到看不出光源形狀程度的廣範圍之物件,具有例如20%以上,80%以下的全光線穿透率。The blue LED 41 is, for example, a so-called "LED package" having an InGaN-type LED chip as a blue light-emitting element. The substrate 42 is made of a glass cloth substrate made of a resin such as phenol, epoxy resin or polyimide. On the substrate 42, the blue LED 41 corresponds to the entire surface of the phosphor powder sheet 33 at regular intervals. Ground for two-dimensional configuration. Further, a reflection treatment may be applied to the mounting surface of the blue LED 41 on the substrate 42 as needed. The substrate 42 and the phosphor powder sheet 33 are disposed so as to be spaced apart from each other by about 10 to 50 mm, and the illumination device constitutes a so-called "remote phosphor powder structure". The gap between the substrate 42 and the phosphor powder sheet 33 is supported by a plurality of support columns or reflectors, and is arranged such that the support column or the reflection plate surrounds the space formed by the substrate 42 and the phosphor powder sheet 44 in all directions. The diffuser 43 has a wide range of objects such that the emitted light from the blue LED 41 is diffused to such an extent that the shape of the light source is not visible, and has a total light transmittance of, for example, 20% or more and 80% or less.

此外,本發明並不僅限於前述實施型態,理所當然地,亦可於不脫離本發明主旨範圍內添加各種的更新。例如,於前述實施型態當中,示出了將照明裝置適用於顯示裝置用的背光光源的例子,亦可適用於照明用光源。適用於照明用光源的情形中,以不需要光學薄膜34的情形居多。此外,含螢光粉樹脂不僅可為平面片狀,亦可為具有杯狀等的立體形狀。Further, the present invention is not limited to the above-described embodiments, and various updates may be added without departing from the spirit and scope of the invention. For example, in the above embodiment, an example in which the illumination device is applied to a backlight source for a display device is shown, and it is also applicable to a light source for illumination. In the case of being suitable for a light source for illumination, it is mostly in the case where the optical film 34 is not required. Further, the phosphor-containing powder resin may be not only a flat sheet but also a three-dimensional shape having a cup shape or the like.

[實施例] 以下舉出實施例與比較例,進一步地具體說明本發明,惟,本發明並不限於此等內容。於實施例當中如下進行對於發光光譜的測量、各種轉換效率的計算,與結晶性的評測。[Examples] Hereinafter, the present invention will be specifically described by way of Examples and Comparative Examples, but the present invention is not limited thereto. Measurements of the luminescence spectrum, calculation of various conversion efficiencies, and evaluation of crystallinity were performed in the examples as follows.

[發光(PL)光譜的測量] 使用分光螢光光度計FP-6500(日本分光社製)的積分球選項,測量PL光譜當中的發光峰波長、發光峰強度,及發光半值全寬。發光峰強度係為以化成Optronics公司製的一般的YAG螢光粉P46-Y3材料的PL光譜資料作為基準下的相對值。[Measurement of Luminescence (PL) Spectrum] Using the integrating sphere option of a spectrofluorometer FP-6500 (manufactured by JASCO Corporation), the wavelength of the luminescence peak, the intensity of the luminescence peak, and the full width at half maximum of the luminescence were measured. The luminescence peak intensity is a relative value under the basis of PL spectrum data of a general YAG phosphor powder P46-Y3 material manufactured by Optronics.

[各種轉換效率的計算] 作為螢光粉的轉換效率,計算:吸收激發光的效率(吸收率)、將所吸收的激發光轉換為螢光之效率(內部量子效率),以及將此等值的積,即將激發光轉換為螢光的效率(外部量子效率)。發光特性係使用分光螢光光度計FP-6500(日本分光社製)的積分球選項來測量。於專用槽內填充螢光粉粉末,照射波長450nm的藍色激發光,測量螢光光譜。將其結果,使用分光螢光度計中內附的量子效率計算軟體來計算量子效率。[Calculation of various conversion efficiencies] As the conversion efficiency of the phosphor powder, the efficiency of absorbing the excitation light (absorption rate), the efficiency of converting the absorbed excitation light into fluorescence (internal quantum efficiency), and the like are calculated. The product is the efficiency of converting the light into fluorescence (external quantum efficiency). The light-emitting characteristics were measured using an integrating sphere option of a spectrofluorometer FP-6500 (manufactured by JASCO Corporation). Fluorescent powder powder was filled in a dedicated tank, and blue excitation light having a wavelength of 450 nm was irradiated to measure a fluorescence spectrum. As a result, the quantum efficiency was calculated using the quantum efficiency calculation software included in the spectrofluorometer.

[結晶性的評測] 基於X光繞射的測量來進行結晶性的評測。使用粉末X光繞射計(PANalytical公司製的X’ Pert PRO),測量於CuKα線的X光繞射(XRD)圖譜當中繞射峰的位置(2θ)及半值寬。以內附的解析軟體的找峰(peak search)功能進行擬合(fitting),解析螢光粉的XRD圖譜的特徵。[Evaluation of Crystallinity] Evaluation of crystallinity was performed based on measurement of X-ray diffraction. The position (2θ) and the half-value width of the diffraction peak in the X-ray diffraction (XRD) pattern of the CuKα line were measured using a powder X-ray diffraction meter (X' Pert PRO manufactured by PANalytical Co., Ltd.). Fitting is performed by the peak search function of the attached analysis software, and the characteristics of the XRD pattern of the fluorescent powder are analyzed.

(實施例1) 首先,準備Ga2 O3 (純度6N)、Ba(NO3 )2 (純度3N)、Sr(NO3 )2 (純度3N)以及Eu(NO3 )3 ・nH2 O(純度3N、n=6.06),以及亞硫酸銨水合物。 接著,如表1所示,以組成式(Bay Sr1-y )1-x Ga2 S4 :Eux 表示的螢光粉當中,以x=0.025,y=0.15的組成比(Eu濃度:2.5mol%、Ba替換比例:15%),計算出要得到0.1莫耳量情況下各原料的重量值。實施例1的情形中為銪化合物(Eu(NO3 )3 ・nH2 O) 1.115g、鋇化合物(Ba(NO3 )2 ) 3.822g,以及鍶化合物(Sr(NO3 )2 ) 17.539g。 將銪化合物、鋇化合物、鍶化合物添加至300ml的純水中,充分地攪拌直到沒有溶解殘留物為止。得到含有銪(Eu)、鋇(Ba)及鍶(Sr)的混和溶液。接著,加入粉狀鎵化合物(粉狀Ga2 O3 )18.744g,使得相對於Eu、Ba及Sr的莫耳量和的Ga莫耳量為其2.0倍。充分地進行攪拌,以製作硝酸鹽與氧化鎵粉末的混和溶液。 接著,將莫耳數為Eu、Ba及Sr的合計莫耳數1.15倍的亞硫酸銨15.487g溶解於100ml的純水當中,製作亞硫酸鹽溶液。 藉由滴下亞硫酸鹽溶液至前述硝酸鹽與氧化鎵粉末的混和溶液中,以得到析出・沉澱物。此析出・沉澱物為亞硫酸銪・鋇・鍶粉體與氧化鎵粉體的混和物。 此外,以純水將析出・沉澱物進行清洗・過濾,直到傳導率變成0.1mS/cm以下,以120℃進行15小時的乾燥。其後藉由通過公稱網目開口100μm的金網,以得到含有Eu、Ba、Ga、及Sr的粉體混和品。此粉體混和品為含有:亞硫酸銪・鋇・鍶粉體[由(Ba, Sr, Eu)SO3 所構成之粉體];以及氧化鎵的混合物。 接著,以電爐將粉體混合品燒成。燒成條件如下所示。以1.5小時升溫至925℃,其後維持著1.5小時、925℃,然後,以兩小時降溫至室溫。燒成中,以0.3公升/分的比例使硫化氫流入電爐。其後,使其通過公稱網目開口25μm的絲網,得到由(Bay Sr1-y )1-x Ga2 S4 :Eux (x=0.025, y=0.15)而成的螢光粉粒子。 將以上的測試材料製作方法於表1中表述為濕式法。(Example 1) First, Ga 2 O 3 (purity 6N), Ba(NO 3 ) 2 (purity 3N), Sr(NO 3 ) 2 (purity 3N), and Eu(NO 3 ) 3 ·nH 2 O ( Purity 3N, n = 6.06), and ammonium sulfite hydrate. Next, as shown in Table 1, among the phosphor powders represented by the composition formula (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x , the composition ratio of x=0.025, y=0.15 (Eu concentration) : 2.5 mol%, Ba substitution ratio: 15%), and the weight value of each raw material in the case where 0.1 mol is obtained is calculated. In the case of Example 1, it is a ruthenium compound (Eu(NO 3 ) 3 · nH 2 O) 1.115 g, a ruthenium compound (Ba(NO 3 ) 2 ) 3.822 g, and a ruthenium compound (Sr(NO 3 ) 2 ) 17.539 g . The hydrazine compound, the hydrazine compound, and the hydrazine compound were added to 300 ml of pure water, and the mixture was sufficiently stirred until the residue was not dissolved. A mixed solution containing cerium (Eu), cerium (Ba), and strontium (Sr) was obtained. Next, 18.744 g of a powdery gallium compound (powdered Ga 2 O 3 ) was added so that the molar amount of the molar amount of Eu, Ba, and Sr was 2.0 times. Stirring was sufficiently performed to prepare a mixed solution of nitrate and gallium oxide powder. Next, 15.487 g of ammonium sulfite having a molar number of 1.15 times the total number of moles of Eu, Ba, and Sr was dissolved in 100 ml of pure water to prepare a sulfite solution. The sulfite solution was dropped to the mixed solution of the nitrate and the gallium oxide powder to obtain a precipitate and a precipitate. The precipitates and precipitates are a mixture of barium sulfite, barium, and strontium powder and gallium oxide powder. In addition, the precipitates and precipitates were washed and filtered with pure water until the conductivity became 0.1 mS/cm or less, and dried at 120 ° C for 15 hours. Thereafter, a powdery mixture containing Eu, Ba, Ga, and Sr was obtained by passing through a gold mesh having a nominal mesh opening of 100 μm. This powder mixture is a mixture containing: yttrium sulfite, yttrium and yttrium powder [a powder composed of (Ba, Sr, Eu) SO 3 ]; and gallium oxide. Next, the powder mixture was fired in an electric furnace. The firing conditions are as follows. The temperature was raised to 925 ° C over 1.5 hours, thereafter maintained at 1.5 hours, 925 ° C, and then cooled to room temperature over two hours. In the firing, hydrogen sulfide was introduced into the electric furnace at a ratio of 0.3 liter/min. Thereafter, it was passed through a screen having a nominal mesh opening of 25 μm to obtain phosphor powder particles of (Ba y Sr 1-y ) 1- x Ga 2 S 4 :Eu x (x=0.025, y=0.15). . The above test material preparation method is expressed in Table 1 as a wet method.

(實施例2~7,以及比較例1~3) 如表1所示,計算出了以組成式(Bay Sr1-y )1-x Ga2 S4 :Eux 所表示的螢光粉當中,以各實施例及各比較例的x值、y值所示組成比,要得到0.1莫耳量情況下,各原料的重量值。除此之外,用與實施例1相同的濕式法,以得到由各實施例、及各比較例的(Bay Sr1-y )1-x Ga2 S4 :Eux 所成的螢光粉粒子。(Examples 2 to 7, and Comparative Examples 1 to 3) As shown in Table 1, the phosphor powder represented by the composition formula (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x was calculated. In the composition ratios of the x value and the y value of each of the examples and the comparative examples, the weight value of each raw material in the case of 0.1 mol. Except for this, the same wet method as in Example 1 was used to obtain a firefly of (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x from each of the examples and the comparative examples. Light powder particles.

(比較例4) 首先,準備Ga2 O3 (純度6N)、BaCO3 (純度3N)、SrCO3 (純度3N)、以及Eu2 O3 (純度3N)。 接著,如表1所示,計算出以組成式(Bay Sr1-y )1-x Ga2 S4 :Eux 所表示的螢光粉當中,以x=0.10、y=0.35的組成比(Eu濃度:10莫耳%、Ba替換比例:35%),要得到0.05莫耳量情況下,各原料的重量值。實施例4的情形中為銪化合物(Eu2 NO3 )0.8798g、鍶化合物(SrCO3 ) 4.318g,以及鋇化合物(BaCO3 )3.108g,以及鎵化合物(Ga2 O3 )為9.372g。 將銪化合物、鍶化合物、鋇化合物、鎵化合物,以球磨機混和於乙醇中。混合結束後,吸附過濾混和物,進行80℃,12小時的乾燥。其後,藉由通過100μm公稱網目開口的金網。以獲得含有Eu、Sr、Ba、以及Ga的粉體混合品。 接著,於粉體混合體裝入氧化鋁燒成板,以電爐進行燒成。燒成條件如下所示。以1.5小時升溫至925℃,其後維持著1.5小時、925℃,然後,以2小時降溫至室溫。燒成中,以0.3公升/分的比例使硫化氫流入電爐。其後,使其通過公稱網目開口25μm的絲網,得到由(Bay Sr1-y )1 -x Ga2 S4 :Eux (x=0.10, y=0.35)而成的螢光粉粒子。將以上的測試材料製作方法於表1中表述為乾式法。(Comparative Example 4) First, Ga 2 O 3 (purity 6N), BaCO 3 (purity 3N), SrCO 3 (purity 3N), and Eu 2 O 3 (purity 3N) were prepared. Next, as shown in Table 1, the composition ratio of x=0.10 and y=0.35 among the phosphors represented by the composition formula (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x was calculated. (Eu concentration: 10 mol%, Ba substitution ratio: 35%), and the weight value of each raw material in the case of 0.05 mol. In the case of Example 4, 0.8798 g of ruthenium compound (Eu 2 NO 3 ), 4.318 g of ruthenium compound (SrCO 3 ), 3.108 g of ruthenium compound (BaCO 3 ), and 9.372 g of gallium compound (Ga 2 O 3 ) were used. The ruthenium compound, the ruthenium compound, the ruthenium compound, and the gallium compound were mixed in ethanol in a ball mill. After the completion of the mixing, the mixture was adsorbed and filtered, and dried at 80 ° C for 12 hours. Thereafter, the gold mesh was opened by passing through a 100 μm nominal mesh opening. A powder mixture containing Eu, Sr, Ba, and Ga is obtained. Next, the powder mixture was placed in an alumina calcined plate and fired in an electric furnace. The firing conditions are as follows. The temperature was raised to 925 ° C over 1.5 hours, thereafter maintained at 1.5 hours, 925 ° C, and then cooled to room temperature over 2 hours. In the firing, hydrogen sulfide was introduced into the electric furnace at a ratio of 0.3 liter/min. Thereafter, it was passed through a screen having a nominal mesh opening of 25 μm to obtain a phosphor powder particle of (Ba y Sr 1-y ) 1 - x Ga 2 S 4 :Eu x (x=0.10, y=0.35). . The above test material preparation method is expressed in Table 1 as a dry method.

整理以上內容,可將以實施例1-7製作的螢光粉組成範圍表示為:於組成比(Bay Sr1-y )1-x Ga2 S4 :Eux 所表示的螢光粉當中,x=0.025~0.20;y=0.15~0.49之範圍。By arranging the above, the composition range of the phosphor powder produced in the examples 1-7 can be expressed as: among the phosphor powder represented by the composition ratio (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x , x = 0.025 to 0.20; y = 0.15 to 0.49.

[表1] [Table 1]

(發光評測結果) 表2為作為實施例1-7,比較例1-4的螢光粉發光特性的評測結果,表示下列各數值:發光峰波長、峰強度、測試材料吸收率、內部量子效率、外部量子效率、CIE色度的x、y值、亮度、發光半值全寬(FWHM)。(Luminescence Evaluation Results) Table 2 shows the evaluation results of the luminescent properties of the phosphors as Examples 1-7 and Comparative Examples 1-4, and the following numerical values were shown: luminescence peak wavelength, peak intensity, test material absorption rate, internal quantum efficiency , external quantum efficiency, x, y value of CIE chromaticity, brightness, full width at half maximum of light emission (FWHM).

由關於實施例1的PL光譜測量結果,得出發光峰出現於波長534nm,發光峰強度為2.50(YAG比);亮度為141.1%(YAG比);發光半值全寬為49nm。此外,CIE x, y 色度點為(0.267、0.688)。此外,計算出轉換效率的結果,吸收率為64.2%、內部量子效率為69.9%,及外部量子效率為44.9%。From the PL spectrum measurement results of Example 1, it was found that the luminescence peak appeared at a wavelength of 534 nm, the luminescence peak intensity was 2.50 (YAG ratio), the luminance was 141.1% (YAG ratio), and the full width at half time of the luminescence was 49 nm. In addition, the CIE x, y chromaticity points are (0.267, 0.688). Further, as a result of calculating the conversion efficiency, the absorption rate was 64.2%, the internal quantum efficiency was 69.9%, and the external quantum efficiency was 44.9%.

同樣地,實施例2-7的發光特性評測結果如表2所示。 發光峰波長為529~535nm;發光峰強度為2.46~3.64(YAG比);亮度為124.7~187.0%(YAG比) ;發光半值全寬為48~50nm。此外,CIE x, y色度點示為(0.235、0.695)至(0.271、0.687)範圍的座標。此外,計算轉換效率的結果為:吸收率為66.4~81.8%;內部量子效率為64.6~79.0%;且外部量子效率為43.4~64.6%。Similarly, the results of evaluation of the light-emitting characteristics of Examples 2-7 are shown in Table 2. The luminescence peak wavelength is 529 to 535 nm; the luminescence peak intensity is 2.46 to 3.64 (YAG ratio); the luminance is 124.7 to 187.0% (YAG ratio); and the luminescence half value is 48 to 50 nm. In addition, the CIE x, y chromaticity points are shown as coordinates in the range of (0.235, 0.695) to (0.271, 0.687). Further, the conversion efficiency was calculated as follows: the absorption rate was 66.4 to 81.8%; the internal quantum efficiency was 64.6 to 79.0%; and the external quantum efficiency was 43.4 to 64.6%.

同樣地,比較例1~4的發光特性的評測結果也示於表2。 發光峰波長為528~538nm;發光峰強度為1.25~3.43(YAG比);亮度為68.1~192.7%(YAG比);發光半值全寬為48~54nm。此外,關於CIE x, y色度點,CIE x值為0.231~0.288範圍,CIE y值為0.672~0.686範圍,為離散型的座標位置。此外,計算出轉換效率的結果為:吸收率為62.6~80.1%;內部量子效率為37.6~75.3%;及外部量子效率為24.9~60.3%。Similarly, the evaluation results of the light-emitting characteristics of Comparative Examples 1 to 4 are also shown in Table 2. The luminescence peak wavelength is 528 to 538 nm; the luminescence peak intensity is 1.25 to 3.43 (YAG ratio); the luminance is 68.1 to 192.7% (YAG ratio); and the full half width of the luminescence is 48 to 54 nm. Further, regarding the CIE x, y chromaticity point, the CIE x value is in the range of 0.231 to 0.288, and the CIE y value is in the range of 0.672 to 0.686, which is a discrete coordinate position. Further, the conversion efficiency was calculated as follows: the absorption rate was 62.6 to 80.1%; the internal quantum efficiency was 37.6 to 75.3%; and the external quantum efficiency was 24.9 to 60.3%.

將實施例1-7、比較例1-4的螢光粉發光特性的評測結果與表1的投入組成比率對照觀之,可確認到大致有此傾向:峰波長為鋇(Ba)替換比例越增加就越短波長化,銪(Eu)濃度越增加就越長波長化。 此外,如圖4所示般,若發光峰波長短波長化,發光峰強度就有降低的傾向。與比較例1~4對比之下,實施例1~7可說是維持相對較高的發光強度,且同時產生短波長化。亮度也與發光峰強度呈現同樣的傾向。此外,實施例1~7當中,以同樣程度的發光波長比較,可知內部量子效率高,具有高效率的發光特性。Comparing the evaluation results of the luminescent properties of the phosphors of Examples 1-7 and 1-4 with the input composition ratios of Table 1, it was confirmed that there was a general tendency that the peak wavelength was 钡(Ba). The shorter the wavelength is, the longer the erbium (Eu) concentration increases, and the longer the wavelength is. Further, as shown in FIG. 4, when the wavelength of the luminescence peak is shortened, the intensity of the luminescence peak tends to decrease. In contrast to Comparative Examples 1 to 4, Examples 1 to 7 can be said to maintain relatively high luminous intensity while simultaneously generating a short wavelength. The brightness also has the same tendency as the intensity of the luminescence peak. Further, in Examples 1 to 7, it was found that the internal quantum efficiency was high and the light-emitting characteristics with high efficiency were obtained by comparing the same emission wavelengths.

另一方面,針對實施例1~7與比較例1~4,將CIE的x, y色度點示於圖5。實施例1~7以「◆」表示;比較例1~4以「△」表示。此外NTSC的綠色度點(0.210、0.710)表示為「■」。實施例1~7的色度點為隨著短波長化,於(0.271、0.687)至(0.235、0.695)的近乎單一曲線上的範圍移動。此外,與比較例1~4相比之下,實施例1~7的CIE值較大,且接近NTSC的綠色度點,因此可知實施例1~7的綠色純度較高。On the other hand, in Examples 1 to 7 and Comparative Examples 1 to 4, the x and y chromaticity points of CIE are shown in Fig. 5 . Examples 1 to 7 are indicated by "◆"; Comparative Examples 1 to 4 are indicated by "Δ". In addition, the greenness point (0.210, 0.710) of NTSC is expressed as "■". The chromaticity points of Examples 1 to 7 were shifted in the range of (0.271, 0.687) to (0.235, 0.695) on a nearly single curve as the wavelength was shortened. Further, in comparison with Comparative Examples 1 to 4, the CIE values of Examples 1 to 7 were large and were close to the greenness point of NTSC. Therefore, it was found that the green purity of Examples 1 to 7 was high.

[表2] [Table 2]

接著,關於實施例1~7、比較例1~4的螢光粉,基於X光繞射來進行結晶性的評測。 於表3示出了實施例1~7、比較例1~4的螢光粉結晶性評測結果。此外,關於實施例1、4、5、7及比較例1~4的X光繞射譜圖,如圖6所示。 針對結晶性評測結果進行徹底解析的結果為發現到實施例1~7具有特有的結晶構造。具體來說,繞射峰出現於繞射角2θ=30.0~30.4°,且相對於最大峰的相對強度表示特定的範圍。 觀察如圖6所示的實施例1的X光繞射譜圖,繞射強度最大的峰為:於繞射角2θ=24.02°上,回歸於SrGa2 S4 的(422)面的繞射峰出現;繞射強度第二的峰為:出現於繞射角2θ=38.38°,回歸於(444)面的繞射峰出現。此外,於繞射角2θ=30.0~30.40之間的30.2°位置上,出現了相對於繞射強度最大峰的相對強度為8.8%的峰。Next, the phosphors of Examples 1 to 7 and Comparative Examples 1 to 4 were evaluated for crystallinity based on X-ray diffraction. Table 3 shows the evaluation results of the crystallinity of the phosphors of Examples 1 to 7 and Comparative Examples 1 to 4. Further, the X-ray diffraction patterns of Examples 1, 4, 5, and 7 and Comparative Examples 1 to 4 are as shown in Fig. 6 . As a result of thorough analysis of the results of the evaluation of the crystallinity, it was found that Examples 1 to 7 have a unique crystal structure. Specifically, the diffraction peak appears at a diffraction angle 2θ=30.0 to 30.4°, and the relative intensity with respect to the maximum peak represents a specific range. Observing the X-ray diffraction spectrum of Example 1 as shown in Fig. 6, the peak with the largest diffraction intensity is: the diffraction of the (422) plane which is returned to the SrGa 2 S 4 at the diffraction angle 2θ = 24.02°. The peak appears; the second peak of the diffraction intensity is: appears at the diffraction angle 2θ=38.38°, and the diffraction peak that returns to the (444) plane appears. Further, at a position of 30.2° between the diffraction angles 2θ = 30.0 to 30.40, a peak having a relative intensity of 8.8% with respect to the maximum peak of the diffraction intensity appeared.

同樣地,關於實施例2-7,比較例1-4也亦然,將下列內容整理於表3:繞射強度最大與第二的繞射角2θ位置;於繞射角2θ=30.0~30.40°所出現的峰的位置與相對於最大峰的相對強度。 於實施例2-7當中的任一者皆然,繞射強度最大峰為:於繞射角2θ=23.82~23.96°上,回歸於SrGa2 S4 的(422)面的繞射峰出現;繞射強度第二峰為:於繞射角2θ=38.17~38.3°上,回歸於(444)面的繞射峰出現。此外,於繞射角2θ=30.0~30.4°當中30.17~30.21°位置上,出現了相對於繞射強度最大峰的相對強度為7.7~14.8%的峰。其中代表性地將實施例4、5、7的X光繞射譜圖示於圖6,可確認前述特有的結晶構造。Similarly, with respect to Examples 2-7, Comparative Examples 1-4 are also the same, and the following are summarized in Table 3: the diffraction intensity is the largest and the second diffraction angle 2θ position; at the diffraction angle 2θ = 30.0 to 30.40 ° The position of the peak appearing and the relative intensity relative to the maximum peak. In any of Embodiments 2-7, the maximum peak of the diffraction intensity is: at a diffraction angle of 2θ=23.82 to 23.96°, a diffraction peak which returns to the (422) plane of SrGa 2 S 4 appears; The second peak of the diffraction intensity is: at the diffraction angle 2θ=38.17~38.3°, the diffraction peak returning to the (444) plane appears. Further, at a position of 30.17 to 30.21° among the diffraction angles 2θ=30.0 to 30.4°, a peak having a relative intensity of 7.7 to 14.8% with respect to the maximum peak of the diffraction intensity appears. Representative examples of the X-ray diffraction spectra of Examples 4, 5, and 7 are shown in Fig. 6, and the specific crystal structure described above can be confirmed.

另一方面,比較例1當中的X光繞射譜圖示於圖6,繞射強度最大的峰為:於繞射角2θ=24.06°上,回歸於SrGa2 S4 的(422)面的繞射峰出現;繞射強度第二的峰為:於繞射角2θ=38.42°上,回歸於(444)面的繞射峰出現,惟,於繞射角2θ=30.0~30.4°並未出現峰。也就是說,比較例1當中為 x=0.10,y=0 的組成比(銪(Eu)濃度:10莫耳%、鋇(Ba)替換比例:0%)之情況,並不含有鋇(Ba),於此組成當中,並未出現繞射角2θ=30.0~30.4°的特有的繞射峰。On the other hand, the X-ray diffraction spectrum in Comparative Example 1 is shown in Fig. 6. The peak with the highest diffraction intensity is: at the diffraction angle 2θ = 24.06°, returning to the (422) plane of SrGa 2 S 4 The diffraction peak appears; the second peak of the diffraction intensity is: at the diffraction angle 2θ=38.42°, the diffraction peak returning to the (444) plane appears, but the diffraction angle is 2θ=30.0~30.4° A peak appears. In other words, in Comparative Example 1, the composition ratio of x=0.10 and y=0 (铕(Eu) concentration: 10 mol%, 钡(Ba) substitution ratio: 0%) does not contain 钡 (Ba). In this composition, a unique diffraction peak having a diffraction angle of 2θ = 30.0 to 30.4° does not occur.

比較例2當中將X光繞射譜圖示於圖6,惟,繞射強度最大的峰出現於繞射角2θ=34.36°;繞射強度第二的峰出現於繞射角2θ=17.00°,呈現出與SrGa2 S4 結構不同的結構,於繞射角2θ=30.0~30.4°也未出現峰。也就是說比較例2係為x=0.025,y=0.05的組成比(銪(Eu)濃度:2.5莫耳%、鋇(Ba)替換比例:5%)的情形,於鋇(Ba)替換比例小的此組成當中,並未出現繞射角2θ=30.0~30.4°的特有繞射峰。In Comparative Example 2, the X-ray diffraction spectrum is shown in Fig. 6, except that the peak with the highest diffraction intensity appears at the diffraction angle 2θ = 34.36°; the peak with the second diffraction intensity appears at the diffraction angle 2θ = 17.00°. It exhibits a structure different from that of the SrGa 2 S 4 structure, and no peak appears at the diffraction angle 2θ=30.0 to 30.4°. That is to say, Comparative Example 2 is a composition ratio of x=0.025, y=0.05 (铕(Eu) concentration: 2.5 mol%, 钡(Ba) substitution ratio: 5%), and the ratio of substitution in Ba (Ba) Among the small compositions, there is no characteristic diffraction peak of the diffraction angle 2θ = 30.0 to 30.4°.

比較例3當中將X光繞射譜圖示於圖6,惟,繞射強度最大的峰出現於繞射角2θ=23.44°,繞射強度第二的峰出現於繞射角2θ=31.82°,呈現出與SrGa2 S4 結構不同的結構。繞射角2θ=30.0~30.4°當中於30.15°位置上出現了相對於繞射強度最大峰的相對強度38.7%的峰。也就是說,比較例3為x=0.05、y=0.55的組成比(銪(Eu)濃度:5莫耳%、鋇(Ba)替換比例:55%)的情形,於此組成當中,繞射強度第二的峰呈現出與SrGa2 S4 結構不同的構造,意味著鋇(Ba)替換比例過大的此組成當中,主構造係為別的構造。In Comparative Example 3, the X-ray diffraction spectrum is shown in Fig. 6, except that the peak with the highest diffraction intensity appears at the diffraction angle 2θ = 23.44°, and the peak with the second diffraction intensity appears at the diffraction angle 2θ = 31.82°. It exhibits a structure different from that of SrGa 2 S 4 . A peak of 38.7% relative to the maximum intensity of the diffraction intensity peak appeared at the 30.15° position in the diffraction angle 2θ=30.0 to 30.4°. That is, Comparative Example 3 is a case where the composition ratio of x=0.05 and y=0.55 (铕(Eu) concentration: 5 mol%, 钡(Ba) substitution ratio: 55%), in this composition, diffraction The second peak of the strength exhibits a structure different from that of the SrGa 2 S 4 structure, meaning that the main structure is another structure among the components in which the substitution ratio of barium (Ba) is excessive.

比較例4當中將X光繞射譜圖示於圖6,惟,繞射強度最大的峰為:於繞射角2θ=24.06°上,回歸於SrGa2 S4 的(422)面繞射峰出現;繞射強度第二的峰為:於繞射角2θ=38.37°上,回歸於(444)面的繞射峰出現;惟繞射角2θ=30.0~30.4°並未出現峰。也就是說,比較例4為x=0.10、y=0.35的組成比(銪(Eu)濃度:10莫耳%、鋇(Ba)替換比例:35%)的情形,於鋇(Ba)替換比例小的此組成當中,繞射角2θ=30.0~30.4°的特有的繞射峰並未出現。In Comparative Example 4, the X-ray diffraction spectrum is shown in Fig. 6. However, the peak with the highest diffraction intensity is: (422) plane diffraction peak which is returned to SrGa 2 S 4 at the diffraction angle 2θ=24.06°. Appears; the second peak of the diffraction intensity is: at the diffraction angle 2θ=38.37°, the diffraction peak that returns to the (444) plane appears; but the diffraction angle 2θ=30.0~30.4° does not appear. That is to say, Comparative Example 4 is a composition ratio of x=0.10 and y=0.35 (铕(Eu) concentration: 10 mol%, 钡(Ba) substitution ratio: 35%), and the ratio of substitution in Ba (Ba) Among the small compositions, a characteristic diffraction peak having a diffraction angle of 2θ = 30.0 to 30.4° does not appear.

[表3] [table 3]

若整理以上結果,對可見於實施例1-7中的特有的結晶構造以下述條件來定義。 具有的特徵為:繞射強度最大的峰為:出現於繞射角2θ=23.7~24.1°,回歸於SrGa2 S4 的(422)面的繞射峰,繞射強度第二的峰為:出現於繞射角2θ=38.1~38.5°,回歸於SrGa2 S4 的(444)面的繞射峰;於繞射角2θ=30.0~30.4°上,具有相對於繞射強度最大峰的相對強度為5~20%的繞射峰。When the above results were collected, the specific crystal structure found in Examples 1 to 7 was defined under the following conditions. It has the following characteristics: the peak with the largest diffraction intensity is: the diffraction angle 2θ=23.7~24.1°, the diffraction peak which returns to the (422) plane of SrGa 2 S 4 , and the second peak of the diffraction intensity is: It appears at the diffraction angle 2θ=38.1~38.5°, and returns to the diffraction peak of the (444) plane of SrGa 2 S 4 ; at the diffraction angle 2θ=30.0~30.4°, it has relative to the maximum peak of the diffraction intensity. A diffraction peak with a strength of 5 to 20%.

此外,於實施例1~7所見的特有的結晶構造,出現於組成式(Bay Sr1-y )1-x Ga2 S4 :Eux 所示的螢光粉當中,x=0.025~0.20;y=0.15~0.49的範圍中。Further, the specific crystal structure seen in Examples 1 to 7 appeared in the phosphor powder represented by the composition formula (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x , x=0.025 to 0.20. ; y = 0.15 ~ 0.49 in the range.

若整理以上的結果,於實施例1~7當中製作的螢光粉,於組成式(Bay Sr1-y )1-x Ga2 S4 :Eux 所示的螢光粉當中,可用x=0.025~0.20;y=0.15~0.49範圍的值來表示。When the above results were collected, the phosphor powders produced in Examples 1 to 7 were used in the phosphor powder represented by the composition formula (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x . = 0.025 to 0.20; the value in the range of y = 0.15 to 0.49 is expressed.

此外,於實施例1~7所見的特有的結晶構造,可用以下的條件來定義。 ・繞射強度最大峰為:出現於繞射角2θ=23.7~24.1°,回歸於SrGa2S4的(422)面的繞射峰。 ・繞射強度第二的峰為:出現於繞射角2θ=38.1~38.5°,回歸於SrGa2S4(444)面的繞射峰。 ・於繞射角2θ=30.0~30.4°上,具有相對於繞射強度最大峰的相對強度為5~20%的繞射峰。Further, the specific crystal structure seen in Examples 1 to 7 can be defined by the following conditions.・The maximum peak of the diffraction intensity is: a diffraction peak that appears at the diffraction angle 2θ=23.7 to 24.1° and returns to the (422) plane of SrGa2S4.・The second peak of the diffraction intensity is: a diffraction peak that appears at a diffraction angle of 2θ=38.1 to 38.5° and returns to the SrGa2S4 (444) plane.・The diffraction peak has a relative intensity of 5 to 20% with respect to the maximum peak of the diffraction intensity at the diffraction angle 2θ=30.0 to 30.4°.

11‧‧‧螢光粉層11‧‧‧Fluorescent powder layer

12‧‧‧第一水蒸氣阻隔膜12‧‧‧First water vapor barrier film

13‧‧‧第二水蒸氣阻隔膜13‧‧‧Second water vapor barrier film

14‧‧‧覆蓋部件14‧‧‧ Covering parts

31‧‧‧藍色LED31‧‧‧Blue LED

32‧‧‧導光板32‧‧‧Light guide plate

33‧‧‧螢光粉片33‧‧‧Flame powder

34‧‧‧光學薄膜34‧‧‧Optical film

41‧‧‧基材41‧‧‧Substrate

42‧‧‧基板42‧‧‧Substrate

43‧‧‧擴散板43‧‧‧Diffuser

141‧‧‧基材141‧‧‧Substrate

142‧‧‧黏著劑142‧‧‧Adhesive

[圖1]係為表示螢光粉片端部的構成例的概略剖面圖。 [圖2]係為表示側光型(edge light)的照明裝置的概略剖面圖。 [圖3]係為表示直下型照明裝置的概略剖面圖。 [圖4]係為表示實施例1-7及比較例1-4的螢光粉的發光峰波長與發光峰強度的關係的圖表。 [圖5]係為表示實施例1-7及比較例1-4的螢光粉的CIE之x值,y值的圖表。 [圖6]係為實施例1、4、5、7以及比較例1-4的螢光粉的X光繞射圖譜。Fig. 1 is a schematic cross-sectional view showing a configuration example of an end portion of a phosphor powder sheet. Fig. 2 is a schematic cross-sectional view showing an illumination device of an edge light. Fig. 3 is a schematic cross-sectional view showing a direct type illumination device. Fig. 4 is a graph showing the relationship between the luminescence peak wavelength of the phosphor powder of Example 1-7 and Comparative Example 1-4 and the luminescence peak intensity. Fig. 5 is a graph showing the x value and the y value of CIE of the phosphor powders of Example 1-7 and Comparative Example 1-4. Fig. 6 is an X-ray diffraction pattern of the phosphors of Examples 1, 4, 5, and 7 and Comparative Examples 1-4.

Claims (7)

一種螢光粉,其特徵為: 至少包含如下通式(1)所示,且滿足下述條件(1)~(3)的螢光物質, (Bay Sr1-y )1-x Ga2 S4 :Eux 通式(1) 惟,該通式(1)當中,0.025≦ x ≦ 0.20,且0.15≦ y ≦ 0.49, 條件(1):XRD圖形的繞射強度最大峰為出現於繞射角2θ=23.7  ~24.1°,回歸於SrGa2 S4 的(422)面的繞射峰; 條件(2):繞射強度第二峰為出現於繞射角2θ=38.1~38.5°,回歸於SrGa2 S4 (444)面的繞射峰; 條件(3):於繞射角2θ=30.0~30.4°上具有相對於該繞射強度最大峰的相對強度為其5~20%的繞射峰。A fluorescent powder characterized by comprising at least a fluorescent substance represented by the following formula (1) and satisfying the following conditions (1) to (3), (Ba y Sr 1-y ) 1-x Ga 2 S 4 :Eu x Formula (1) However, in the formula (1), 0.025 ≦ x ≦ 0.20, and 0.15 ≦ y ≦ 0.49, Condition (1): The maximum diffraction intensity of the XRD pattern appears in the winding The angle of incidence 2θ=23.7 to 24.1°, which is regressed to the diffraction peak of the (422) plane of SrGa 2 S 4 ; Condition (2): The second peak of diffraction intensity appears at the diffraction angle 2θ=38.1~38.5°, regression a diffraction peak on the SrGa 2 S 4 (444) plane; Condition (3): a relative intensity of 5 to 20% relative to the maximum peak of the diffraction intensity at a diffraction angle 2θ=30.0 to 30.4° Shoot the peak. 如請求項1所述之螢光粉,其中,該螢光物質的基於CIE1931表色系統的y值為0.687以上。The phosphor powder according to claim 1, wherein the y value of the fluorescent substance based on the CIE1931 color system is 0.687 or more. 如請求項1所述之螢光粉,其中,該螢光物質的內部量子效率為0.64以上。The phosphor powder according to claim 1, wherein the fluorescent material has an internal quantum efficiency of 0.64 or more. 一種螢光粉片,其特徵為具有螢光粉層,該螢光粉層含有請求項1-3中任一項所述的螢光粉,以及紅色螢光粉。A phosphor powder sheet comprising a phosphor powder layer, the phosphor powder layer comprising the phosphor powder according to any one of claims 1 to 3, and a red phosphor powder. 一種照明裝置,其特徵為具有請求項4所述之螢光粉片。A lighting device characterized by having the phosphor powder sheet of claim 4. 一種製造請求項1-3中任一項所述螢光粉之螢光粉製造方法,其特徵為包含: 析出沉澱製程,其為將用於溶解鋇化合物、鍶化合物及銪化合物且含有粉末鎵化合物的第一液與含有亞硫酸鹽的第二液進行混和,獲得沉澱物,該沉澱物為含有亞硫酸鋇、亞硫酸鍶,及亞硫酸銪的析出物與該粉末鎵化合物之混合物。A method for producing a phosphor powder according to any one of claims 1 to 3, characterized by comprising: a precipitation precipitation process for dissolving a cerium compound, a cerium compound and a cerium compound and containing powdered gallium The first liquid of the compound is mixed with the second liquid containing sulfite to obtain a precipitate which is a mixture of precipitates containing barium sulfite, barium sulfite, and barium sulfite and the powdered gallium compound. 如請求項6所述之螢光粉製造方法,其中,還包含燒成製程,其為於包含硫化氫氛圍下燒成該沉澱物。The method for producing a phosphor powder according to claim 6, further comprising a baking process for firing the precipitate under a hydrogen sulfide-containing atmosphere.
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