TW201906098A - Semiconductor device package - Google Patents

Abstract

A semiconductor device package includes a package substrate, a semiconductor component, a heat spreader and a thermal conductive structure. The package substrate has a surface. The semiconductor component is disposed over the surface of the package substrate. The heat spreader is disposed over the surface of the package substrate and the semiconductor component. The thermal conductive structure is between the semiconductor component and the heat spreader. The thermal conductive structure includes a first polymeric layer, and a plurality of first fillers disposed in the first polymeric layer. Each of the first fillers is laterally surrounded by the first polymeric layer, and two ends of each of the first fillers are exposed from opposing surfaces of the first polymeric layer and are respectively in contact with the semiconductor component and the heat spreader.

Description

Semiconductor device package

The present invention relates to a semiconductor device package, and more particularly to a semiconductor device package having a thermally conductive structure having a thermal conductivity in a vertical direction that is higher than a thermal conductivity in a lateral direction.

The semiconductor industry has witnessed an increase in the integration density of various electronic components in some semiconductor device packages. This increased integration density often corresponds to increased power density in semiconductor device packages. As the power density of semiconductor device packages increases, heat dissipation may become desirable in some implementations. Therefore, it may be applicable to provide a semiconductor device package with improved thermal conductivity in some implementations.

In some embodiments, a semiconductor device package includes a package substrate, a semiconductor component, a heat spreader, and a thermally conductive structure. The package substrate has a surface. The semiconductor component is disposed above the surface of the package substrate. The heat spreader is disposed on the surface of the package substrate and the semiconductor component. The thermally conductive structure is disposed between the semiconductor component and the heat spreader. The thermally conductive structure includes a first polymer layer and a plurality of first fillers. Each of the first fillers has two ends and is laterally surrounded by the first polymer layer. The two ends of each of the first fillers are exposed from opposite surfaces of the first polymer layer and are in contact with the semiconductor component and the heat spreader, respectively. In some embodiments, a semiconductor device package includes a package substrate, a semiconductor component, a heat spreader, and a thermally conductive structure. The package substrate has a surface. The semiconductor component is disposed above the surface of the package substrate. The heat spreader is disposed on the surface of the package substrate and the semiconductor component. The thermally conductive structure is disposed between the semiconductor component and the heat spreader. The thermal conductivity of the thermally conductive structure in a vertical direction substantially perpendicular to the surface of the package substrate is greater than the thermal conductivity of the thermally conductive structure in a lateral direction substantially parallel to the surface of the package substrate. In some embodiments, a semiconductor device package includes a package substrate, a semiconductor component, a heat spreader, and a thermally conductive structure. The package substrate has a surface. The semiconductor component is disposed above the surface of the package substrate. The heat spreader is disposed on the surface of the package substrate and the semiconductor component. The thermally conductive structure has a first thickness in a central region and a second thickness in an edge region, and the first thickness is smaller than the second thickness.

The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. Specific examples of components and configurations are described below to illustrate some aspects of the invention. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, the formation of the first feature above or above the second feature may include embodiments in which the first feature is formed or disposed in direct contact with the second feature, and may also include additional features that may be formed or disposed An embodiment between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the sake of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or configurations discussed. Unless otherwise stated, such as "above", "below", "up", "left", "right", "down", "top", "bottom", "vertical", "horizontal", "side" The spatial descriptions of "above", "below", "above", "above", "below", etc. are indicated relative to the orientation shown in the figure. It should be understood that the space description used herein is for illustration purposes only, and the actual implementation of the structure described in this article may be spatially configured in any orientation or manner, and its limitations are the advantages of the embodiments of the present invention. No deviation due to configuration. The following description contains descriptions of some semiconductor device packages and methods of manufacturing them. In some embodiments, the semiconductor device package includes a thermally conductive structure having a polymeric layer and a vertically aligned filler. The vertically aligned filler helps to make the thermal conductivity of the thermally conductive structure greater than the thermal conductivity in the lateral direction. This enables rapid and / or efficient transfer of heat generated by the semiconductor components during operation to the heat spreader via a short thermal path, as discussed below. The polymeric layer can help improve contact between the thermally conductive structure and the semiconductor component. In some embodiments, the thermally conductive structure has a first thickness in the central region and a second thickness in the edge region, the first thickness being smaller than the second thickness. FIG. 1 is a cross-sectional view of some embodiments of a semiconductor device package 1 according to a first aspect of the present invention. As shown in FIG. 1, the semiconductor device package 1 includes a package substrate 10, one or more semiconductor components 20, a die attach layer 24, a heat spreader 30, and a thermally conductive structure 40. The package substrate 10 has a surface 101 (for example, an upper surface). In some embodiments, the package substrate 10 may include a semiconductor substrate, an interposer, or other suitable substrate (eg, a substrate including a circuit integrated therein, one or more conductive layers, and / or a conductive structure). In one or more embodiments, the surface 101 is configured to receive the semiconductor component 20. The package substrate 10 has another surface 102 (eg, a lower surface) opposite the surface 101, and the surface 102 may be configured to provide an electrical connection outside the semiconductor component 20. For example, the surface 102 may expose conductive pads on which solder balls or other connectors may be formed or placed. The semiconductor device 20 is disposed above the surface 101 of the package substrate 10. In some embodiments, the semiconductor device 20 may be electrically connected to the surface 102 by a circuit, a conductive layer, or a conductive structure embedded in the package substrate 10, so that the semiconductor device package 1 may be electrically connected to another electronic device such as a circuit board. Device. In some embodiments, the semiconductor component 20 includes one or more semiconductor dies or the like. The semiconductor device 20 may be disposed on the package substrate 10 via, for example, a die attach layer 24 (eg, a die attach film and / or an adhesive such as a conductive adhesive). The heat spreader 30 is disposed above the surface 101 of the package substrate 10 and the semiconductor component 20. In some embodiments, the material of the heat spreader 30 may include, but is not limited to, a metal, a metal alloy, or another material having a high thermal conductivity. In some embodiments, the thermally conductive structure 40 is interposed between and in contact with the semiconductor device 20 and the heat spreader 30 and can transfer heat generated by the semiconductor device 20 to the heat spreader during operation器 30。 30. In some embodiments, the area of the thermally conductive structure 40 (eg, the area of the top surface of the thermally conductive structure 40 or the area of the coverage area of the thermally conductive structure 40) is equal to or greater than the area of the semiconductor component 20 (e.g., the area of the top surface of the semiconductor component 20) Area or the area covered by the semiconductor device 20), for example, at least about 92% of the area of the semiconductor device 20, at least about 94% of the area of the semiconductor device 20, and at least about 96% of the area of the semiconductor device 20 , At least about 98% of the area of the semiconductor device, about 100% of the area of the semiconductor device 20, or any value ranging from about 90% of the area of the semiconductor device 20 to about 100% of the area of the semiconductor device 20. This can help improve heat dissipation efficiency. In some embodiments, the semiconductor component 20 has an active surface 20A having input / output (I / O) terminals, such as a bonding pad or other conductive structure, configured to electrically connect the semiconductor component 20 to Package substrate 10. In some embodiments, the active surface 20A of the semiconductor component 20 may face the heat spreader 30. In some embodiments, the semiconductor device package 1 may further include a wire 22 such as a bonding wire that electrically connects the active surface 20A to the package substrate 10. The heat spreader 30 may substantially surround or cover the semiconductor component 20, the electrical wires 22, and the thermally conductive structure 40. In some embodiments, the heat spreader 30 may include a first portion 301 and a second portion 302 connected to each other. The first portion 301 may be substantially disposed on and in contact with the upper surface 401 of the thermally conductive structure 40. In some embodiments, the first portion 301 may extend laterally across the upper surface 401 of the thermally conductive structure 40 and may be wider than the thermally conductive structure 40 in a lateral direction. The second portion 302 is connected to the first portion 301 and may extend from the first portion 301 toward the package substrate 10. In some embodiments, the second portion 302 extends in an oblique direction relative to the surface 101 of the package substrate 10 and can be connected to the package substrate 10 (for example, the first portion 301 can be substantially connected to the surface 101 of the package substrate 10 (Straight, straight line). In some embodiments, the second portion 302 of the heat spreader 30 may be adhered to and in contact with the surface 101 (eg, in direct contact). In some alternative embodiments, the second portion 302 of the heat spreader 30 may be connected to the surface 101 by an adhesive layer (not shown). In some embodiments, the semiconductor device package 1 may further include an encapsulant 32 that at least partially encapsulates the semiconductor component 20, the thermally conductive structure 40, the heat spreader 30, and the electrical wires 22. In some embodiments, the encapsulant 32 may expose the upper surface 30A of the heat spreader 30. In some embodiments, the material of the encapsulant 32 may include a molding material, such as epoxy resin or the like. The thermal conductivity coefficient of the encapsulant 32 is lower than the thermal conductivity coefficient of the thermally conductive structure 40. In some embodiments, the thermal conductivity coefficient of the encapsulant 32 is in the range of about 0.7 Watts per meter per Kelvin (W / mK) to about 6 W / mK. The thermal conductivity of the thermally conductive structure 40 in a vertical direction Z substantially perpendicular to the surface 101 of the package substrate 10 is greater than the thermal conductivity of the thermally conductive structure 40 in one or two lateral directions X, Y, which lateral direction X And Y are substantially parallel to the surface 101 of the package substrate 10 (for example, the surface 101 of the package substrate 10 may be substantially in a plane extending in the X and Y directions). Therefore, the heat generated by the semiconductor component 20 during operation can be quickly and / or efficiently transferred toward the heat spreader 30 in the vertical direction by the heat conductive structure 40, thereby improving the heat dissipation efficiency. The thermally conductive structure 40 may provide a short thermal path, as discussed below. In some embodiments, the thermally conductive structure 40 is configured to have a high thermal conductivity coefficient and configured to adhere to the semiconductor component 20 and the heat spreader 30. In some embodiments, the thickness of the thermally conductive structure 40 may be substantially greater than about 200 microns. As an example, the thickness of the thermally conductive structure 40 may be in a range from about 200 microns to about 700 microns; within a range from about 200 microns to about 600 microns; within a range from about 300 microns to about 600 microns; between about 300 microns to Within a range of about 500 microns; or within other suitable ranges. In some embodiments, the thermal conductivity coefficient of the thermally conductive structure 40 may be in a range of about 40 W / mK to about 90 W / mK. In some embodiments, the thermally conductive structure 40 is in direct contact with the semiconductor component 20 and the thermal spreader 30 without using a media material such as die attach materials and molding materials. Low thermal conductivity coefficient. This may help to make the average thermal conductivity coefficient in the thermal path between the semiconductor component 20 and the heat spreader 30 high, and thus enhance the thermal conductivity efficiency of the semiconductor package device 1. FIG. 2A is a cross-sectional view of some embodiments of the thermally conductive structure 40 in an initial state according to some embodiments of the present invention. As shown in FIGS. 1A and 2A, the thermally conductive structure 40 may include a first polymeric layer 42 and a first filler 44 aligned in a substantially vertical manner in the first polymeric layer 42. In some embodiments, the material of the first polymer layer 42 may include, but is not limited to, a silicone resin or the like. In some embodiments, the material of the first polymeric layer 42 may be optically and / or thermally sensitive, and may be optically and / or thermally curable. In some embodiments, the first polymeric layer 42 may be cured before forming the heat spreader 30. In some embodiments, the material of the first filler 44 may include, but is not limited to, graphite, graphene, carbon fiber, boron nitride, or the like. In some embodiments, each of the first fillers 44 is laterally surrounded or covered by the first polymeric layer 42 such that the first filler 44 is maintained substantially vertically aligned by the first polymeric layer 42. An end portion 44A and an end portion 44B (for example, relatively vertical end portions) of each of the first fillers 44 are exposed from the first polymer layer 42. The vertically aligned first filler 44 may have a high thermal conductivity coefficient and may provide a heat transfer channel in the vertical direction Z. Compared to non-vertically aligned fillers (such as randomly dispersed fillers), the vertically aligned first fillers 44 help to substantially increase the thermal conductivity of the thermally conductive structure 40 in the vertical direction Z Greater thermal conductivity in the lateral directions X, Y, and therefore the heat generated by the semiconductor component 20 during operation may be via a short thermal path (e.g., a direct path along the vertically aligned first filler 44) ) Quickly and / or efficiently transferred to the heat spreader 30. The first polymer layer 42 may be a soft and elastic material, which may help improve contact between the thermally conductive structure 40 and the semiconductor component 20 and may help avoid delamination. The material of the thermally conductive structure 40 can be chemically stable, and thus chemical cross-contamination between the thermally conductive structure 40 and the semiconductor component 20 can be avoided. FIG. 2B is a cross-sectional view of some embodiments of the thermally conductive structure 40 in a deformed state according to some embodiments of the present invention. In some embodiments, the thermally conductive structure 40 is suitable for implementations in which an external force is applied (such as by a mold sleeve or the like) to clamp the thermally conductive structure 40 to the semiconductor component 20. In some of these embodiments, a die attach layer (eg, a die attach film) may be omitted. In some implementations, the thermally conductive structure 40 is compressed and connected to the heat spreader 30 and the semiconductor component 20 by an external force. By ignoring the die attach film, which may have a low thermal conductivity coefficient, the thermally conductive structure 40 may enhance the heat dissipation efficiency of the semiconductor device package 1. In some embodiments, the thermally conductive structure 40 may be cured before the heat spreader 30 is formed. As shown in FIG. 2B, after compressing the thermally conductive structure 40, the first filler 44 of the thermally conductive structure 40 may still be aligned substantially vertically (e.g., despite some deviation from perfect vertical alignment) and may be provided at Heat transfer channels in substantially vertical direction Z. In some embodiments, the thickness of the thermally conductive structure 40 after this deformation may be reduced by an amount in the range of about 10% to about 40% of the initial thickness (e.g., reduced by about 10%, about 20%, about 30%, Or about 40%). As an example, when the initial thickness of the thermally conductive structure 40 is about 500 microns, the thickness of the thermally conductive structure 40 after deformation may be about 400 microns. In addition, after the thermally conductive structure 40 is compressed, the contact between the thermally conductive structure 40 and the semiconductor component 20 can be improved. In some embodiments, the compression of the thermally conductive structure 40 can increase the tolerance of the thickness deviation of the thermally conductive structure 40 and improve the thickness uniformity of the thermally conductive structure 40. As an example, if the deformation ratio (such as the stretch ratio or elongation ratio) is 20% and the initial thickness of the thermally conductive structure 40 is 120 microns, the thickness deviation tolerance of the thermally conductive structure 40 is 24 microns (20% of 120 microns). Similarly, if the deformation ratio is 20% and the initial thickness of the thermally conductive structure 40 is 500 microns, the thickness deviation tolerance of the thermally conductive structure 40 is 100 microns (20% of 500 microns). The semiconductor device package provided by the present invention is not limited to the embodiments described above, and may include other different embodiments, such as the embodiments described below. To simplify the description and for a convenient comparison between each of the embodiments of the present invention, the same or similar components in each of the following embodiments are labeled with the same number and will not be described too much. 3A is a cross-sectional view of some embodiments of a semiconductor device package 2 according to a second aspect of the present invention, and FIG. 3B is a partial top view of the semiconductor device package 2 according to some embodiments of the present invention. As shown in FIGS. 3A and 3B, unlike the semiconductor device package 1 of FIG. 1, the active surface 20A of the semiconductor component 20 faces the package substrate 10. In some embodiments, the semiconductor device package 2 may further include a conductive structure 26 electrically connecting the active surface 20A to the package substrate 10. As an example, the conductive structure 26 may include, but is not limited to, a conductive bump, a conductive ball, or the like. In some embodiments, the semiconductor device package 2 may further include an underfill layer 28 surrounding the conductive structure 26 and disposed between the semiconductor component 20 and the package substrate 10. In some embodiments, the second portion 302 of the heat spreader 30 is connected to the surface 101 by an adhesive layer 12. In some embodiments, the thermally conductive structure 40 may have a lateral edge 40E, and the semiconductor device package 2 may further include at least one adhesive structure 50 surrounding the edge 40E of the thermally conductive structure 40. The adhesive structure 50 may be further connected to the semiconductor device 20 and the heat spreader 30. In some embodiments, the adhesive structure 50 may be configured to join the first portion 301 of the heat spreader 30 to the semiconductor component 20. In some embodiments, the adhesive layer 12 and the adhesive structure 50 may include the same material and may be formed at the same time. In some embodiments, the adhesive structure 50 may be configured to help position the thermally conductive structure 40 (eg, the thermally conductive structure 40 may be surrounded by the adhesive structure 50, as shown in FIG. 3A). In some embodiments, the adhesive structure 50 is positioned around the periphery of the semiconductor device 20, and the width of the adhesive structure 50 can be reduced, which can help to avoid the adverse effect on the heat dissipation of the thermally conductive structure 40. In some embodiments, the width (eg, along the X direction) of the adhesive structure 50 is equal to or less than about 10% of the width of the semiconductor device 20 (eg, equal to or less than about 8% of the width of the semiconductor device 20, equal to or less than (About 6% of the width of the semiconductor device 20 is equal to or less than about 4% of the width of the semiconductor device 20 or equal to or less than about 2% of the width of the semiconductor device 20). In some embodiments, the area of the thermally conductive structure 40 (eg, the area of the top surface of the thermally conductive structure 40 or the area of the footprint of the thermally conductive structure 40) is equal to or greater than about 90% of the area of the semiconductor component 20 (eg, equal to or greater than (About 92% of the area of the semiconductor device 20, equal to or greater than about 94% of the area of the semiconductor device 20, equal to or greater than about 96% of the area of the semiconductor device 20, or equal to or greater than about 98% of the area of the semiconductor device 20) . In some embodiments, the encapsulation may be ignored. FIG. 4 is a cross-sectional view of an adhesive structure 50 according to some embodiments of the present invention. As shown in FIG. 4, the adhesive structure 50 may include a second polymer layer 52 and a second filler 54 disposed in the second polymer layer 52. In some embodiments, the second fillers 54 are randomly distributed in the second polymeric layer 52. In some embodiments, the second polymeric layer 52 of the adhesive structure 50 and the first polymeric layer 42 of the thermally conductive structure 40 may include the same material and the same catalyst to help avoid adverse effects due to material differences. In some embodiments, the second filler 54 of the adhesive structure 50 and the first filler 44 of the thermally conductive structure 40 may include different materials. For example, the material of the first filler 44 may include, but is not limited to, graphite, graphene, carbon fiber, boron nitride, or the like, and the material of the second filler 54 may include, but is not limited to, silicon oxide, aluminum oxide, Silver or similar. In some embodiments, the material of the second polymeric layer 52 may be optically and / or thermally sensitive, and may be optically and / or thermally cured. 5A is a cross-sectional view of some embodiments of a semiconductor device package 3 according to a third aspect of the present invention, and FIG. 5B is a partial top view of the semiconductor device package 3 according to some embodiments of the present invention. As shown in FIGS. 5A and 5B, unlike the semiconductor device package 2 of FIG. 3A, the semiconductor device package 3 includes a fan-out device package. In some embodiments, the semiconductor component 20 may include two or more semiconductor dies 201. In some embodiments, each semiconductor die 201 may have an edge 201E (eg, an external lateral edge), and the encapsulant 32 is disposed between the thermally conductive structure 40 and the package substrate 10 and surrounds or covers the semiconductor die 201 Each edge 201E of each. In some embodiments, the semiconductor device package 3 may further include a substrate 70, and the semiconductor die 201 is disposed above the substrate 70. FIG. 6 is a cross-sectional view of some embodiments of a semiconductor device package 4 according to a fourth aspect of the present invention. As shown in FIG. 6, unlike the semiconductor device package 2 of FIG. 3A, the heat spreader 30 of the semiconductor device package 4 is disposed above the thermally conductive structure 40 and extends substantially parallel to the package substrate 10. In some embodiments, the heat spreader 30 has a substantially plate-shaped structure. In some embodiments, the encapsulant 32 is disposed between the heat spreader 30 and the package substrate 10 and laterally surrounds the semiconductor component 20, the thermally conductive structure 40 and the underfill layer 28. FIG. 7 is a cross-sectional view of some embodiments of a semiconductor device package 5 according to a fifth aspect of the present invention. As shown in FIG. 7, unlike the semiconductor device package 3 of FIG. 5A, the semiconductor device package 5 has a substantially bent or curved (eg, bowed) shape. In some embodiments, the central portion of the semiconductor device package 5 may be bent upwards (eg, may have a concave shape) relative to other embodiments described herein. In some embodiments, the thermally conductive structure 40 has a first thickness t1 in the central region 40A, and the thermally conductive structure 40 has a second thickness t2 in the edge region 40B, and the first thickness t1 is smaller than the second thickness t2; for example, t1 may be t2 is about 98% or less, about 95% or less, or about 90% or less. In some embodiments, the thermally conductive structure 40 is cured before the thermal spreader 30 is clamped, and the adhesive structure 50 is cured after the thermal spreader 30 is clamped, thereby providing a concave shape of the thermally conductive structure 40. In some embodiments of the present invention, the semiconductor device package includes a thermally conductive structure having a polymer layer and a vertically aligned filler. The vertically aligned filler helps to make the thermal conductivity of the thermally conductive structure in the vertical direction greater than the thermal conductivity of the thermally conductive structure in the lateral direction, and thus the heat generated by the semiconductor components during operation can be reduced by The heat path is transferred to the heat spreader. The polymeric layer can help improve contact between the thermally conductive structure and the semiconductor component. The material of the thermally conductive structure is chemically stable, and thus can help avoid chemical cross-contamination between the thermally conductive structure and the semiconductor component and reduce the risk of delamination. As used herein, the singular terms “a / an” and “the” may include plural referents unless the context clearly dictates otherwise. As used herein, the terms "conductive / electrically conductive" and "conductive" refer to the ability to carry a current. Conductive materials are generally indicative of materials that exhibit little or zero opposition to current flow. One measure of conductivity is Siemens / meter (S / m). Generally, a conductive material is a material having a conductivity of greater than about 10 ⁴ S / m (eg, at least 10 ⁵ S / m or at least 10 ⁶ S / m). The conductivity of a material can sometimes change with temperature. Unless otherwise specified, the conductivity of materials is measured at room temperature. As used herein, the terms "substantially", "substantially", "substantially" and "about" are used to describe and illustrate small variations. When used in conjunction with an event or situation, the term may refer to both an example in which the event or situation occurs precisely and an example in which the event or situation occurs very closely. For example, when used in conjunction with a value, the term can refer to a range of variation that is less than or equal to ± 10% of the value, such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or Equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%. For example, if the difference between two values is less than or equal to ± 10% of the average value of the value, such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%, the two values can be considered to be "substantially" the same or equal. For example, "substantially" parallel may refer to a range of angular variation less than or equal to ± 10 ° with respect to 0 °, such as less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than Or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °. For example, "substantially" vertical may refer to a range of angles less than or equal to ± 10 ° with respect to 90 °, such as less than or equal to ± 5 °, less than or equal to ± 4 °, less than or equal to ± 3 °, less than Or equal to ± 2 °, less than or equal to ± 1 °, less than or equal to ± 0.5 °, less than or equal to ± 0.1 °, or less than or equal to ± 0.05 °. In addition, quantities, ratios, and other numerical values are sometimes presented in a range format herein. It should be understood that these range formats are used for convenience and brevity, and should be flexibly understood not only to include values explicitly designated as range limits, but also for patented ranges and all individual values or subranges covered by that range As if explicitly specifying each value and subrange. Although the invention has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the invention. Those skilled in the art will generally understand that various changes can be made and equivalents can be substituted without departing from the true spirit and scope of the invention as defined by the scope of the appended patent application. The description may not be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the artistic reproduction in the present invention and the actual equipment. There may be other embodiments of the present invention that are not specifically described. This specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, material composition, method, or process to the objectives, spirit, and scope of the present invention. All such modifications are intended to be within the scope of the claims appended hereto. Although the methods disclosed herein have been described with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided, or reordered to form equivalent methods without departing from the teachings of the present invention. Therefore, unless specifically indicated herein, the order and grouping of operations is not a limitation of the present invention.

1‧‧‧Semiconductor device package

2‧‧‧Semiconductor device package

3‧‧‧Semiconductor device package

4‧‧‧Semiconductor device package

5‧‧‧Semiconductor device package

10‧‧‧ package substrate

12‧‧‧ Adhesive layer

20‧‧‧Semiconductor components

20A‧‧‧Active Surface

22‧‧‧Wire

24‧‧‧ die attach layer

26‧‧‧ conductive structure

28‧‧‧ underfill layer

30‧‧‧Heat spreader

30A‧‧‧Upper surface 30A

32‧‧‧ Encapsulation

40‧‧‧Conductive structure

40A‧‧‧Central Area

40B‧‧‧Marginal zone

42‧‧‧The first polymerization layer

44‧‧‧ the first filler

44A‧‧‧End

44B‧‧‧End

40E‧‧‧lateral edge

50‧‧‧ Adhesive structure

52‧‧‧Second Polymerization Layer

54‧‧‧Second filler

70‧‧‧ substrate

101‧‧‧ surface

102‧‧‧ surface

201‧‧‧Semiconductor die

201E‧‧‧Edge

301‧‧‧Part I

302‧‧‧Part Two

401‧‧‧upper surface

When read in conjunction with the accompanying drawings, aspects of some embodiments of the present invention are best understood from the following detailed description. It should be noted that various structures may not be drawn to scale, and the dimensions of various structures may be arbitrarily increased or decreased for clarity of discussion. 1 is a cross-sectional view of some embodiments of a semiconductor device package according to a first aspect of the present invention; FIG. 2A is a cross-sectional view of some embodiments of a thermally conductive structure in an initial state according to some embodiments of the present invention; 2B is a cross-sectional view of a thermally conductive structure in a deformed state according to some embodiments of the present invention; FIG. 3A is a cross-sectional view of some embodiments of a semiconductor device package according to a second aspect of the present invention; Partial top view of some embodiments of the semiconductor device package according to the second aspect of the present invention; FIG. 4 is a cross-sectional view of an adhesive structure according to some embodiments of the present invention; FIG. A cross-sectional view of some embodiments of a device package; FIG. 5B is a partial plan view of some embodiments of a semiconductor device package according to a third aspect of the present invention; Cross-sectional views of some embodiments; and FIG. 7 is a cross-sectional view of some embodiments of a semiconductor device package according to a fifth aspect of the present invention.

Claims (21)

A semiconductor device package includes: a package substrate having a surface; a semiconductor component disposed above the surface of the package substrate; a heat spreader disposed on the surface of the package substrate and above the semiconductor component; and A thermally conductive structure disposed between the semiconductor component and the thermal spreader, wherein the thermally conductive structure includes: a first polymer layer; and a plurality of first fillers each having two ends and disposed on the first polymer Layer, wherein each of the first fillers is laterally surrounded by the first polymer layer, and the two ends of each of the first fillers are opposed from the first polymer layer The surface is exposed and in contact with the semiconductor component and the heat spreader, respectively. The semiconductor device package of claim 1, wherein the first filler is aligned in a vertical direction substantially perpendicular to the surface of the package substrate. The semiconductor device package of claim 1, wherein the thermal conductivity of the thermally conductive structure in a vertical direction substantially perpendicular to the surface of the package substrate is greater than that of the thermally conductive structure substantially parallel to the surface of the package substrate Thermal conductivity in the lateral direction. The semiconductor device package of claim 1, wherein the thermal conductivity of the first filler is greater than the thermal conductivity of the first polymer layer. The semiconductor device package of claim 1, further comprising at least one adhesive structure surrounding the edge of the thermally conductive structure and connected to the semiconductor component and the heat spreader. The semiconductor device package of claim 5, wherein the adhesive structure includes a second polymer layer and a plurality of second fillers disposed in the second polymer layer. The semiconductor device package of claim 6, wherein the first polymer layer of the thermally conductive structure and the second polymer layer of the adhesive structure include the same material, and the first filler of the thermal conductive structure and the first The two fillers include different materials. The semiconductor device package of claim 5, wherein the width of the adhesive structure is equal to or less than about 10% of the width of the semiconductor device. The semiconductor device package of claim 1, wherein the heat spreader includes a first portion and a second portion, the first portion is in contact with the first filler, and the second portion extends from the first portion toward the package substrate. The semiconductor device package of claim 1, wherein the semiconductor component has an active surface facing the thermal spreader, and the semiconductor device package includes: a plurality of wires that electrically connect the active surface to the package substrate; and a die An attachment layer between the semiconductor component and the package substrate. The semiconductor device package of claim 1, wherein the semiconductor component has an active surface facing the package substrate, and the semiconductor device package includes: a plurality of conductive structures that electrically connect the active surface to the package substrate; and an underfill A layer surrounding the conductive structure and disposed between the semiconductor component and the package substrate. The semiconductor device package of claim 1, further comprising an encapsulant that encapsulates the semiconductor component, the thermally conductive structure, and the heat spreader. The semiconductor device package of claim 1, further comprising an encapsulant, wherein the semiconductor component includes two or more semiconductor dies each having an edge, and the encapsulant is disposed on the thermally conductive structure and the package substrate Between and surrounds the edge of the semiconductor die. A semiconductor device package includes: a package substrate having a surface; a semiconductor component disposed above the surface of the package substrate; a heat spreader disposed on the surface of the package substrate and above the semiconductor component; and thermal conduction A structure disposed between the semiconductor component and the heat spreader and in contact with the semiconductor component and the heat spreader, wherein heat of the thermally conductive structure in a vertical direction substantially perpendicular to the surface of the package substrate The conductivity is greater than the thermal conductivity of the thermally conductive structure in a lateral direction substantially parallel to the surface of the package substrate. The semiconductor device package of claim 14, wherein the thermally conductive structure includes a first polymer layer and a plurality of firsts each having two ends and disposed in the first polymer layer and laterally surrounded by the first polymer layer. A filler, and the two ends of each of the first fillers are exposed from opposite surfaces of the first polymer layer and are in contact with the semiconductor component and the heat spreader, respectively. The semiconductor device package of claim 15, further comprising at least one adhesive structure surrounding the edge of the thermally conductive structure and connected to the semiconductor component and the heat spreader. The semiconductor device package of claim 16, wherein the adhesive structure includes a second polymer layer and a plurality of second fillers disposed in the second polymer layer. The semiconductor device package of claim 17, wherein the first polymer layer of the thermally conductive structure and the second polymer layer of the adhesive structure include the same material, and the first filler of the thermally conductive structure and the first filler of the adhesive structure The two fillers include different materials. A semiconductor device package includes: a package substrate having a surface; a semiconductor component disposed above the surface of the package substrate; a heat spreader disposed on the surface of the package substrate and above the semiconductor component; and A thermally conductive structure between the semiconductor component and the heat spreader, wherein the thermally conductive structure has a first thickness (t1) in a central region and a second thickness (t2) in an edge region, and the first thickness (t1) is smaller than the second thickness (t2). The semiconductor device package of claim 19, wherein the thermally conductive structure comprises: a first polymer layer; and a plurality of first fillers each having two ends and each of which is substantially vertically aligned in the first polymer layer. Standard, wherein each of the first filler is laterally surrounded by the first polymer layer, and the two ends of each of the first filler are exposed from the first polymer layer and are respectively In contact with the semiconductor component and the heat spreader. The semiconductor device package of claim 20, further comprising an adhesive structure surrounding the edge of the thermally conductive structure and connected to the semiconductor component and the heat spreader, wherein the adhesive structure includes a second polymer layer and is disposed on the second polymer layer A plurality of second fillers, the first polymeric layer of the thermally conductive structure and the second polymeric layer of the adhesive structure include the same material, and the first filler of the thermally conductive structure and the second filler of the adhesive structure The filler includes different materials.