TW201846B - - Google Patents
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- TW201846B TW201846B TW080106143A TW80106143A TW201846B TW 201846 B TW201846 B TW 201846B TW 080106143 A TW080106143 A TW 080106143A TW 80106143 A TW80106143 A TW 80106143A TW 201846 B TW201846 B TW 201846B
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/095—Laser devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Prostheses (AREA)
Description
經濟部中央標準局員工消費合作社印製 ^01848 A 6 _BJB_ 五、發明説明(1 ) 發明^背景 1 .發明之铕域 本發明是有關電磁幅射之反射的元件一尤其指布雷格 反射。利用此原理之反射器有很多功用,且均與本發明有 關。此原理之應用可以只包含一個反射器,或包含其它更 複雜的元件,例如,凹槽之同調或非同調之反射光均與此 分布式雷格反射有蘭。 2.目前分布式布雷格反射器之敘沭 分布式布雷格反射器(DBR)之重要性,主要是因 它可以較完全的反射能量。此優點主要是可完全反射電磁 波之光譜,雖然有時只能反射部份光譜的能量。雖然只有 簡單而單一的介面,反射器還是有很多功能,而且與波長 是獨立的。很多應用上須要用到DBR。例如,X光。在 其它波長,現在所諝的的a有效率的反射"逹到9 5%或 98%是不恰當的。雷射之共振腔轚稱可逹99%之反射 Ο DBR之設計及製造與很多考盧一部份是經濟上的, 部份是功能上。這些考盧例如:由不同反射率材料構成之 連缠對介面之累積反射,操作與介面之傳輸/反射比有關 一此特性是由Δη來決定(與構成介面之折射率差有開) 。此數值相對的也決定了某一特定反射所須之層數。增加 △η在經濟上可減省層數。製造上缺黏較少,反射路徑較 短,同而反應時間較少。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂_ 線. 太ttiS· R Λ· ϊΛ 用 Ψ Μ Κ «:摁miCNS)帘4姒格(210x297公贽) -3 - ^01848 A 6 B6 經濟部中央標準局貝工消費合作社印製 五、發明説明(2 ) 很多地方需要DBR的結構,例如,雷射結構,都需 要很好的晶體的結構。符合此需求有許多磊晶成長技術。 而製造雷射時,磊晶技術最好使用分子束磊晶成長及化學 氣相沉積等。這些技術之誤差若要在幾個埃之内,而要很 多時間及金錢,垂直共振表面放光雷射(VCSEL)之 共振腔,通常需要很高的反射效率,磊晶時可能要好幾値 小時,而且又很貴,它使用的儀器又很浪費空間。有些人 估計此種製造技術可能要多花50%的錢。 在操作上,DBR之複雜程度非常重要。反射層需要 的愈多,介面産生缺陷的可能性就愈大,同時層的厚度及 共振腔長度均會有變化。因此,人們通常希望共振腔反射 層數變少,由於理論上算出來Δη愈大則需要的層數就會 變少,因此很多人努力地在找Δη很大的材料。 雖然此種尋找一直繼缠著,但在某些波長此需要就不 那麼迫切。例如,單一置子it之砷化鎵VCSEL。若其 波長在◦. 85至0. 98微米且反射率為99. 7%, 則只需要18對的砷化鎵/砷化鋁(Δη^Ο. 65)的 DBR反射鏡。但是在其它波長就沒有這麼容易了。例如 ,磷化铟的材料在1. 55撖米之波長就沒有此種Δη值 。在此波長操作之單一置子#之VCSEL目前並在未有 人發表,而且可能需要40値布雷格反射對(每一對Δη = 0.3)。 DBR共振腔在雷射腔元件中是很重的(同諝),但 是它也可以應用在非同諝的應用上。一般而言,此種非同 (請先閲讀背面之注意事項再填寫本頁) 裝· 本紙張尺度逍用中國Β家標準(CNS)甲4規格(210X297公釐) -4 - ^01848 Λ 6 Β6 經濟部中央標準局貝工消費合作杜印製 五、發明説明(3 ) 調光源之共振腔在其放光範圍無法找到適宜之鏡面。此項 缺點可利用增大Δη來解決。(反射率對波長的依賴隨箸 △ η的增加而減小)。如果△ η能夠增大,則目前無法達 到的許多應用均可輕易達到。這些應用包括對波長敏感的 偵測器、光學邏輯腔、光學調制器以及所有需要高反射鏡 元件之条統及製程。這裡所諝的製程包括投射光蝕,它可 應用至次微米技術。 太發明之摘要 本發明增大△!!之方法是先蝕刻後填進D B R結構。 它對於需要用到複雜技術之元件有很大的重要性。在本發 明中,高反射率或低反射率層均先被蝕刻掉,再填入折射 率更高及更低的材料。 為使讀者更易明瞭,本結構先利用與組成有關的蝕刻 液蝕刻,再《入適當折射率之材料。此處再埔入之方法可 能有很多,一般均用有機高分子聚合物,以利用製造及操 作。製造時通常需要低的黏滞力,不需要的反應儘量避免 ,如此可避免洞的産生,並且也可避免污染。不污染的話 才可確保好的光學特性,例如:低的幅射吸收,溫度穩定 性及其它影鬱的穩定性。 上述條件的滿足在DBR的應用上最很有價值的。經 由本發明,上述達不到的1. 55微米VCSEL就可軽 易達到。 利用高的△!!以減少波長對反射率的影響可應用在很 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂_ 線 本紙張尺度逍用中Η Β家樣準(CNS)甲4規格(210x297公着) 經濟部中央標準局貝工消費合作社印製 ^.01840 Λ 6 _ Β6 五、發明説明(4 ) 多地方,例如不同調電磁波之産生及偵測。本發明之應用 可取代現今所採用的許多光源。 附匾夕簡蓉説明 圔1是利用本發明到製造出來的DBR結構的示意圖 〇 圖2是一値含有被兩個DBR叉開之主動區結構之側 視圖。 詳細說明1L 圖1之元件之基板1 1上有1個DBR10結構。第 一次的製造先成長層1 2 (高折射率)用以包住層1 3。 層13也是利用磊晶成長而來,然後再腐蝕掉繼以填入有 機物。一般的結構層1 2是高折射率物質,層1 3是再填 入的,其折射率較低。圖1的結構中,它是由砷化鎵及高 分子聚合物構成,在◦. 98徹米波長時,可達99%的 反射率。(而一般GaAs/AlAs只可達65%)。 在1. 55微米應用時,此種結構應用在磷化絪時,亦可 達到約略相同的數值。(傳統之磷化洇DBR只可達到 5 0 %之反射率)。 此圖亦可應用在元件製造的討論。簡單地説,層13 的去除是利用浸在溶液中時之邊緣暴露。此去除可因孔 1 4而加速。 (請先閲讀背面之注意事項再塡寫本頁) 裝- . 線 本紙張尺度逍用中國國家標準(CNS)甲4規格(210x297公釐) 經濟部中央標準局員工消費合作社印製 ί,01846 Λ 6 ____Β_6_ 五、發明説明(5 ) 在一値持殊之實施例中,蝕刻液之成份/狀況之選擇 可阻止在區域16的靥13被去除掉,使得該結構得以支 撑,以便確保之後層12之分離。 圖2是DBR反射鏡當作電磁能量之共振腔(同調或 非同調)。在此圖中,主動區20包會4値量子#2 1, 它是P型層22及η型層23之後合區。其設計之需求眾 所周知,因此在這就不詳加討論。在這種結構中,若要得 到最佳表現,是使電磁波可在所需之波長於共振腔中産生 共振。該結構是由DBR24及25所構成,毎一DBR 包含後來填進去的層2 6及原先成長之層2 7。虛線所表 示的是未蝕刻前之層所成長之處,層22及23之電子接 點2 9及3 0是該結構注入電流之處。 前面曾指出,本發明在非同諝光之應用較同諝光之應 用為大。大一點的可使發光之光譜較雷射為明亮。以 LED取代雷射的主要考慮是在價錢上。現在雷射外科手 術只考廉能置,並不考慮同諝及光譜線寬度。因此使用 LED就可以了。例如,使用LED亦可避免雷射斑點。 若將圔2作為L E D之主動區2 1則可省去許多結構 需求。LED的主動區比較像一個普通的半導體而不像量 子甘雷射。當主動區20之折射率較反射鏡部份為低時, 在放射光方向之厚度只需一値或多個波長一在L E D的例 子中,大約是中央放射頻率的一倍或幾倍波長。若是反射 鏡之折射率較主動區為离情況也是一樣的。 本结構含4値量子it可放射0. 95微米之波長,其 -- 本紙張尺度逍用中國B家樣準(CNS)甲4規格(210x297公釐) (請先閲讀背面之注意事項再填寫本頁) 裝< 訂- 線· 經濟部中央標準局貝工消費合作社印製 1;〇1846 Λ 6 ____Β6_ 五、發明説明(6 ) △η約為2. 05。 元件種類 ' 本發明所有元件均含有分布式布雷格反射鏡(DBR )。DBR結構最少含有三個功能性結構(此處之功能性 偽指對反射有貢獻之介面)。以上的這項說明,在有些型 式的DBR並不成立,其折射率可由二維介面之貢獻而得 。也有些元件為了製造簡單,故意用一些折射率漸變的設 計。 本發明主要是將數層磊晶成長層以其它物質取代,以 便獲得大的Δη。最簡單的結構只取代一層。在很多用途 上反射率要求達到99%。取代的層數通常要1層或1層 以上。在VCSEL結構中若要達到99%的反射率,就 需要三對以上的DBR。VCSEL此時代表有強烈作用 區。結構可以有很多變化,此處所指出的LED主要是著 眼於經濟效益。 此處所設計之元件,其後再《入之層其寬度或長度對 厚度之比最少要3 : 1。而由於精確的設計,本發明之比 例為6:1或更高。此時,折射率分佈均勻是最重要的。 本發明中再《入的層可符合折射率之需求。由於磊晶層被 去除,再《入新的層,有利於DBR结構的需求。一般而 言,被去除掉的層對最後的元件並沒有貢獻。 製程 (請先閲讀背面之注意事項再填寫本頁) 裝- •V* _ 本紙張尺度边用中國國家標準(CNS)甲4規格(210x297公釐) —8· 經濟部中央標準局兵工消費合作社印製 ^01^46 五、發明説明(7 ) 為了說明方便,我們用另一種角度來看製程。在此節 中,主要是討論與本發明有關的製程,包含磊晶層之去除 及再填入。 任何情形下,磊晶成長要在基板上開始。一般而言, 反射鏡部份最好完全無缺陷,若無法辦到,最少在層的方 向或厚度方向要是均勻的。磊晶成長的方法可視元件而定 。一般實驗都是以MBE或CVD來成長。在此領域的專 家會根據各種限制而取一種最好的方法。液相磊晶成長亦 是一可行的方法。 在本發明中,製造過程與最終元件之形成是分離的。 上面已指出,DBR的表現好不好要視缺陷之多寡及界面 平滑與否而定。此結構完全視1/4波長之交互反射鏡層 而決定是否與理論符合。不幸的是,此項先決條件對元件 之表現産生很大的限制,例如Δη就無法太大一若要大的 △η層數就要增多,又如會對波長及光譜寛度産生限制, 或者它會産生吸收損失。 我們若將某些層以其它物質取代。可以産生大的Δη ,同時缺陷對結構的影瓛也不會太大。在一個較好的實施 例中,可使蝕刻後的平面更為光滑。此種平面的平滑主要 是因為磊晶成長的關僳而不是蝕刻的關偽。表面之平滑主 要是能量之考量。平滑的程度主因是平面的自由能要低。 因此,若假設均勻之成長狀況,平滑與否就是力學的 事了,平滑與否決定的主要因素磊晶材料之動力學。同時 也視磊晶程序而定,磊晶之材料可決定元件之功能。最終 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 線- 本紙張尺度逍用中國Β家標準(CNS)甲4規格(210x297公*) 兮 經濟部中央標準局員工消費合作社印製 ^01848 Λ 6 __Β6__ 五、發明説明(g ) 元件之成份與遷移率之關係也要考慮進去。有些材料遷移 率較慢,會使得磊晶的材料和原來一模一樣。本發明材料 之選擇是依蝕刻之選擇性而定。一般都是選低遷移率以使 製造簡單。而砷化鋁之遷移率就比砷化鎵低很多。在其它 的成長狀況,成長後要蝕刻掉之砷化鋁靥可能會造成砷化 鎵層上的缺陷。鋁化鎵去除之後再填入物質,平面的平滑 與否很重要。 對於此種不平滑有很多的補救辦法。因為這純粹是動 力學的問題,而不是熱力學的問題,因此,溫度可以增加 ,時間亦可增加。若是某種蝕刻液既不影鬱交互層之材料 。亦不影響其它元件特性,那便可以採用。此處所舉的例 子採用另一種方法。在例2中,可去除的層實際上包含了 二層,最後的小層是幾個原子層的砷化鋁層。在此層中, 只有表面不平的問,但一旦與高遷移率的砷化鎵層配合後 ,此問題可獲得解決。 例2是本實施例一個重要的實施方法。大量的使用高 遷移率的鎵層而不影鬱到蝕刻,其原因乃在於砷化鎵與鋁 化鎵靥都很薄,可使蝕刻液看起來好像是均質的材料。由 於每一層均成長的與原子層差不多厚,可以減少高遷移率 之砷化鎵所需之平坦效應-也使鋁化鎵所需填的缝隙深度 變小。 另一種可便介面平坦的方法,必需依賴均勻之合金成 份一例如:0. 6的砷化鋁及0.4的砷化鎵。同樣地, 增加目前成份已均勻之靥的遷移率可實質上改進平滑度。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂- 線- 本紙張尺度通用中國a家樣準(CNS)甲4規格(210X297公龙) -10馨 $.01846 A 6 136 經濟部中央標準局貝工消費合作社印製
五、發明説明(9 ) 同時亦不會影響到選擇性蝕刻。 原型之DBR—般均與成長層之厚度有關,此厚度一 般都是1/4波長。而為了再填入的方便,最小的厚度通 常有限制。例如,若要採用高黏滯性的材料,可能就需要 3値、5値或更多個1/4波長的厚度,這原因可能是製 造的溫度問題,也可能是同製造或功能需求而需採用高分 子重量物質。 上一段主要是基本考慮。然而在某些狀況下,例如: 吸收損失很高時,最佳化的狀況可能就不一樣了。例如: 若有一兩層布雷格層的吸收性較其它層為強。我們若採用 薄的高吸收層及厚的低吸收層(總厚度仍為1/2波長) 其效果可能會好一些。 本發明在某些程度上要依賴高鋁層之選擇蝕刻能力。 例子之一可採用氫氰酸,它可選擇性蝕刻掉砷化鋁層。而 溫度若愈低(Ot:)介面會愈平坦。此外,超音波振動會 使選擇性蝕刻更有效率。 液體蝕刻通常可以滿足製造需求。溫度、擾動或蝕刻 液之均勻度若控制得好,通常可以得到很好的結果。氣相 的蝕刻對裝備及控制霹求較嚴。例如,反應離子蝕刻即是 一例。 在大部份的製程中都要求欲再《入的層上不可有殘留 物。在某些情況下,蝕刻的確非常容易完成。但在大多數 情況下,蝕刻之去除要很小心,通常需要一傾或多傾的蝕 刻步騎。一般而言,牲刻只要使用單一溶液。在液態HF (請先閲讀背面之注意事項再填寫本頁) 訂· 線· f紙張尺度遑用中國國家標準(CNS)甲4規格(210x297公釐) tt-
ΐΕΓ «η L/l IDI ^0184¾ Λ 6 Β6 經濟部中央標準局貝工消費合作社印製 五、發明説明 (10) 的蝕刻中,利用稀釋溶液來終止蝕刻會造成蝕刻不完全。 此情形可以用繼缠稀釋、超音波振盪,最後再以丙酮去除 水來改善之。實驗上發現,在稀釋的過程中,剩下的層往 往會有陷下來的現象。而此現象就要以減低稀釋程度來避 免。這裡我們假設此種陷下來的現象是因為邊緣電場造成 之電容效應所引起。在表面保留一些丙酮可以避免再填入 時有凹洞産生。 在高鋁層的情況下,此種倒塌的現象更是重要。此現 象雖可採取一些方法來減輕,例如:在例1之實施例中保 留區域16的物質,然而還是有其它事項需要注意。實驗 發現在蝕刻出來的凹洞中«入液饈。而埔入丙酮就是一値 好方法。在某些情況下,再填入需要有乾的及未《入之區 域。在一個例子中,使用高黏滯性的物質,使用C〇2溶 液。此步驟使C〇2變成液態以去除殘餘之丙酮。然後再 使C〇2揮發掉即完成。 再填入物質之選擇主要著眼於製造容易及元件之功能 。最終的目的是要達到大的Δη,因此這種再填入的層與 剩下來靥材料應差很多。從製造的觀點上看來,首先的需 求就是要有低的黏滞力,以便加速作用而不留下缺陷。 熱固定樹脂已有很好的成效,主要是其大小很穩定, 填入後黏滞力低。 未凝結之樹脂成份可加入低黏滯力之有機溶劑,如丙 酮,以加速伸入蝕刻層結構,接著再加入濃度更高的溶液 以便在最後的結構中有足夠的樹脂。另外,也可利用一値 (請先閲讀背面之注意事項再填寫本頁) 裝- 線· 本紙張尺度遑用中國國家樣準(CNS)甲4規格(210x297公釐) 經濟部中央標準局貝工消費合作社印製 本紙張尺度边用中國Η家標準(CNS)甲4規格(210x297公; ^01β4ό λ6 __Β6_ 五、發明説明(11) 熟知的技術,使用一種反應稀釋溶液來達成。熵入後,樹 脂可利用傳統方法而使之定型。 例1 圔1之結構是成長在砷化鎵基板上,尺寸約為 0. 5 "XI. 0 "x〇. 02 ' 靥 12 為 1341Α 厚的砷化鋁,層13則是296 0Α (5/4波長)的 A 1 c.3Gac.7As ,最後總共有6層。砷化鋁靥最後以 10wt. 在超音波振盪。 如果要去除30撤米的物質大約需使用10%的酸溶 液3分鐘。接著氫氟酸溶液以蒸餾水1比10000稀釋 。最後以丙酮將多餘的水去除。 殘餘之丙酮與再熵入之丙烯酸物質是互溶的。正方型 的凹洞可以加速蝕刻及再瑱入之進行。此步驟負擔接下來 之非選擇性蝕刻之罩幕工作。 在波長為0. 88徹米時之Δη為1. 91,此時之 反射率高於9 7 %。 例2 在此例中欲蝕去之層是由一些不同成份且非常薄的層 所組成(此處稱為疊合金)。 首先,於砷化鎵上成長磊晶層。成長的層分別是6埃 厚的砷化鋁一 4埃厚的砷化鎵等,總共有1 4 5對此種靥 (每一單位總厚度1 450埃)。在這些叠晶層的上面再 »- (請先閲讀背面之注意事項再填寫本頁) 裝- 訂* 線· ^01848 Λ 6 Β 6 五、發明説明 (12)長一層2966埃的Ai?。·a Ga。·7 As層。此步驟重 覆五次。這些叠合金最後以例一之狀態蝕刻掉。 (請先閱讀背面之注意事項再填寫本頁) 裝· 經濟部中央標準局員工消費合作社印製 本紙張尺度逍用中國國家標準(CNS)甲4規格(210x297公釐) -14 -
Claims (1)
- 詞4-:第80106143號申請專利案 中文申請專利範圍修正本 民國81年10月修正 1 種製造包含有分布式布雷格反射器之裝置的製程 .此布雷格反射器包含若千高及低折射率材質層,所述高 低折射率是相對於在裝置操作中所欲使用的指定波長之電 磁波能量而言,其中該折射率材質之一是以晶晶方式成長 而成者, +辛寺戤在於另一該折射率材質是以再填回逕触刻移除之磊 晶成長可拋棄材質而製成的,藉此使分布式布雷格反射器 包括有至少一個具有声或低折射率的保背餍,此保留層與 至少—値折射率與該保留層大不相同的PP填回層相接觸, 其中該群刻移除晶晶成長可抛棄材質之成份與該至少一層 保留層之成份不同,且其中之魏刻移除是藉由使用g虫劑來 選擇性地移除該可拋棄材質而達成的。 2 .如申請專利範圍第i項所述的製程,其中該反射器 基本上包含袞替之高與低折射率材質層。 3·如申請專利範圍第1項所述的製程,其中各磊晶成 長可拋棄材質層基本上包含有多數個不同成份的均勻薄子 劈.其中子層之成份實質上較易為申請專利範圍第1項 所述用來達成選擇性移除之触劑所溶解。 4· 申請專利範圍第1項所述的製程,其中使用能達 成再m回的前驅材質來進行再填回,該材質基本上包含忽 固性聚合財料,其於再瑱回後硬化。 T4 (21·Χ297^μ7 ^' - -01848 i 10 16 £5 .如申請專利範圍第1項所述的勒71 只以让町鉍程,其中達成蝕刻 移除後必需進行至少一丨固跟触劑去除的步驟。 6♦如申請專利範圍第5項所述的製程,其中將轴劑去 除時引入m將触劑溶你?的材質。 7. 如申請專利範圍第6項所述的製程,其中触劑是一 種水溶液,而將独劑去除時满將其進一步佛釋。 8. 如申請專利範圍第7項所述的製程,其中於所述進 '步稀釋後引入與再规回材質相容的有機溶劑材質。 9 .如申請專利範圍第5項所述的製程,其中於独劑去 除後予以ia臨界點地供乾。 10.如申請專利範圍第Θ項所述的製程,其中之超臨界 供乾包含引入遇度及_力位於其臨界點上之二氣化娥,而 且此超臨界烘乾在蝕劑去除後馬上進行。 11 .如申請專利範圍第1項所述的製程,其中A η最少 等於1。 12 .如申諸專利範隱丨第11項所述的製程•其中-△ η最少 等於1 . 8 ,而ί装留之折射率材包含钟化錦_。 13. —種利用申請專利範園第1至第12項中任一項的製 程所製造出來的産品 (210X207公釐) Z
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US57593090A | 1990-08-31 | 1990-08-31 | |
US07/590,197 US5158908A (en) | 1990-08-31 | 1990-09-28 | Distributed bragg reflectors and devices incorporating same |
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TW201846B true TW201846B (zh) | 1993-03-11 |
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EP (1) | EP0473362B1 (zh) |
JP (1) | JPH04234186A (zh) |
KR (1) | KR920004892A (zh) |
CA (1) | CA2049848C (zh) |
DE (1) | DE69124647T2 (zh) |
TW (1) | TW201846B (zh) |
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1990
- 1990-09-28 US US07/590,197 patent/US5158908A/en not_active Expired - Lifetime
-
1991
- 1991-08-05 TW TW080106143A patent/TW201846B/zh not_active IP Right Cessation
- 1991-08-22 DE DE69124647T patent/DE69124647T2/de not_active Expired - Fee Related
- 1991-08-22 EP EP91307731A patent/EP0473362B1/en not_active Expired - Lifetime
- 1991-08-26 CA CA002049848A patent/CA2049848C/en not_active Expired - Fee Related
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US5158908A (en) | 1992-10-27 |
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CA2049848C (en) | 1995-12-05 |
DE69124647D1 (de) | 1997-03-27 |
EP0473362A3 (en) | 1992-05-06 |
DE69124647T2 (de) | 1997-09-11 |
EP0473362B1 (en) | 1997-02-12 |
KR920004892A (ko) | 1992-03-28 |
EP0473362A2 (en) | 1992-03-04 |
JPH04234186A (ja) | 1992-08-21 |
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