TW201843344A - Method and device for the thermal treatment of a substrate - Google Patents

Abstract

The invention relates to a device and a method for the thermal treatment of at least one substrate (2) in a process chamber (1) of a treatment device at a regulated temperature with a heat flow from a heating element (5) heating a susceptor (4), to which the heating power (10) is supplied from the outside, through the substrate (2) heated by the susceptor (4) and the process chamber (1), to a cooling element (9) cooling a process chamber cover (7), from which a waste heat flow (26) is outwardly dissipated. The temperature regulation comprises at least one regulating circuit, in which the waste heat flow (26) is the regulating variable, the heat flow being detected by heat flow detection means (20). A variable heat flow resistance is modifiable in order to regulate the heat flow.

Description

 Method and apparatus for heat treating a substrate  

The present invention relates to a method and apparatus for heat treating at least one substrate by heat flow at a controlled temperature in a process chamber of a processing apparatus, wherein the heat flow is from a heating element that inputs thermal power from the outside and heats the substrate holder The substrate is driven through the substrate holder and the processing chamber reaches a cooling element that conducts the waste heat flow outward and cools the top of the process chamber.

Devices of the same type are used in semiconductor technology for coating a substrate, in particular a semiconductor layer. The substrate abuts against the substrate holder or the substrate holder that is carried by the substrate holder and rotatable about the axis. Energy is applied to the substrate holder from a side facing away from the substrate. The heating element provided for this purpose can be an infrared radiator or an RF coil. The surface of the substrate to be coated faces the process chamber, wherein a process gas that is at least partially decomposed after the chemical reaction is fed into the process chamber, so that a layer can be created on the surface of the substrate. The top of the process chamber opposite the substrate is cooled by the cooling element to a temperature well below the temperature of the substrate holder. Based on this temperature difference, a heat flow from the substrate holder through the substrate and the process chamber to the top of the process chamber cooled by the cooling element is formed. This heat flow depends on the heat transfer characteristics of the components of the processing device disposed between the heating element and the cooling element, wherein the heat transfer from the substrate holder to the substrate during the coating process is maintained substantially unchanged in the program parameters. The characteristics remain essentially unchanged. The thermal conductivity of the heat transfer path from the base of the substrate to the surface of the substrate is substantially determined by the thermal conductivity of the solid. In the case of rotating the substrate holder on the air cushion, it is also necessary to take into account the heat transfer through the air gap. The varying air flow also causes the heat transfer to change. This air gap generally forms the maximum heat transfer resistance between the substrate holder and the substrate together with the air gap between the substrate and the substrate holder.

The heat transfer from the surface of the substrate through the process chamber to the top of the process chamber is performed on the one hand by heat conduction by the gas located in the process chamber, and a small portion is also transmitted through convection, but substantially through heat radiation, and depends on Emissivity and reflectivity on the surface of the substrate and the top of the process chamber. The surface of the top of the process chamber has, in particular, an emissivity that varies with time. This is a consequence of parasitic coating of the top surface of the process chamber, but it is also a consequence of aging.

The purpose of temperature control is to maintain the temperature of the chemically reacted surface of the substrate at a constant value, wherein the surface of the substrate should have the same temperature as much as possible over its entire surface, which temperature must be throughout the coating process and It remains constant during subsequent coating procedures. In order to measure the surface temperature, pyrometers have been used in the prior art, in particular pyrometers operating at wavelengths of 400 nm. The surface temperature of the substrate is optically determined by such a pyrometer, and the surface temperature of the substrate holder is also determined as the case may be. In the case of using a tantalum substrate, the surface temperature of the substrate can be determined by such a pyrometer. This solution cannot be achieved with a sapphire substrate. The sapphire is transparent to light of this wavelength. If, for example, a GaN layer is deposited on a sapphire substrate, the temperature of the surface of the substrate holder or substrate holder located under the substrate is initially measured by such a pyrometer due to the transparency of the substrate. The surface temperature of the substrate or the layer deposited on the substrate can be measured by a pyrometer only if a sufficiently thick GaN layer has been deposited on the substrate.

Thus, in the heat transfer path between the heating element and the cooling element, there are several heat flow resistances along the direction of heat flow, the magnitude of which affects the temperature distribution between the heating element and the cooling element and the substrate temperature.

The object of the present invention is to improve the same type of method or the same type of device in such a way that the same substrate temperature can be achieved with the same process parameters in the subsequent growth process.

The solution to achieve the above object of the present invention is the invention given in the scope of the patent application, wherein the subsidiary item is not only a preferred further embodiment of the invention given in the two parallel claims, but also A stand-alone solution for the purpose.

In the first aspect of the invention, the variable heat flow resistance is varied. In this solution, an element is provided in the heat transport path from the base of the substrate to the cooling element, and in particular between the top of the process chamber and the cooling element, the thermal conductivity, in particular the thermal conductivity, is variable. The element may be constructed from a movable component, such as a movable solid. Preferably, however, the element is formed by a gap through which a flushing gas can flow. Heat must flow through the gap from the substrate holder to the cooling element, so the gap constitutes a heat flow resistance. This heat flow resistance can be changed as follows: for example, a gas having a different thermal conductivity is fed into the gap. In particular, a solution is adopted in which a mixture of two gases having a large difference in thermal conductivity or heat capacity is fed into the gap. In particular, a mixture of hydrogen and nitrogen is fed into the gap. The mixing ratio of the two gases is varied such that the heat flow outwardly of the cooling element remains constant. At least two control loops can be provided in this solution. The first control loop controls the substrate holder temperature. Preferably, the substrate holder is heated by an RF heating device. A temperature measuring element is provided in the substrate holder or on the edge of the substrate holder. The temperature measuring component can be the end of the cable that is connected to the pyrometer. However, the temperature measuring element can also be a thermocouple that provides a thermoelectromotive force that serves as a control variable for thermal power control. Temperature measurement can be performed on the side of the substrate holder that faces the heating device. The second control loop regulates the waste heat flow to a nominal value. There is also a heat flow detecting member which measures the waste heat flow through the mass flow rate of the coolant and the temperature difference between the inlet temperature and the discharge temperature, and the waste heat flow is kept constant by the second control loop. The gap of the rinse gas rinsing extends substantially parallel to the substrate seat surface or the top of the process chamber throughout the entire area of the process chamber provided with the substrate. The gas mixture in the gap can be varied by the air flow controller such that the waste heat flow of the coolant remains constant. The thermal power is controlled by a heating element control system. The gap between the cooling element and the top of the process chamber can be in the range of millimeters. Due to manufacturing tolerances, the gap width may vary when the top of the process chamber is changed to another. The effect of such tolerances is also compensated for by the method of the invention as a temperature balance. It is also possible to compensate for changes in the emissivity of the surface defining the gap. The gap preferably extends between the cooling element and the top of the process chamber of the custom process chamber. However, the invention also proposes that operating parameters representative of the characteristics of the heat flow are also used in the temperature control process. According to the invention, temperature control is affected by heat flow. According to another aspect of the invention, the invention provides that the temperature control device has at least one control loop, wherein the heat flow is a control variable. In the method of the invention, thermal power is delivered from the outside to the heating element. The heating element heats the substrate holder. A heat flow from the heating element to the cooling element is formed based on a temperature difference between the substrate holder and the cooling element. The heat flow passes through the substrate heated by the substrate holder and the process chamber until reaching a cooling element that cools the top of the process chamber. According to the invention, a heat flow detecting member is provided for measuring the heat flow at a predetermined position. In a preferred embodiment of the invention, the waste heat stream is measured and used for temperature control. To this end, the device of the present invention has an electronic control device that is arranged and programmed to use control parameters determined from the heat derived from the coolant for temperature control. In particular, the cooling element has a cooling channel through which the coolant passes. The coolant can be maintained at a constant cooling temperature by a cooling control loop. However, it is sufficient to use only the following preferred solution: a constant mass flow of the coolant flows through the cooling passage. The mass flow rate of the coolant and the difference between the discharge temperature of the coolant and the entry temperature together serve as a measure for heat dissipation. The product of the two variables and the specific heat capacity of the coolant constitute the measured waste heat flow. The mass flow can also be varied, for example to maintain the discharge temperature of the coolant at a constant value. According to one aspect of the invention, the waste heat flow is preferably used as a control variable at a constant coolant flow rate to maintain the temperature of the substrate at a constant value. According to one aspect, the nominal temperature is first maintained at a constant value or the thermal power required to obtain the rated temperature is observed. If the thermal power is found to rise relative to the reference value, the temperature rating can be increased. According to one aspect, as an alternative to thermal power, the difference in waste heat flow can be used to determine the nominal temperature compensation. In this arrangement, the heat flow constitutes at least one control variable of the heating element control loop. This solution is employed at least during a time when the reliability of the surface temperature of the substrate cannot be determined by another, in particular, optical temperature measuring instrument. However, if the conditions permit optical measurement of the surface temperature of the substrate, the thermal power can also be adjusted according to the rated value of the substrate temperature. This solution is particularly applicable to processing devices in which one or more substrates are placed against a substrate holder, and the substrate holder is heated from the back side through a resistance heating device or through an IR heating device. In particular, in this embodiment, the process gas is preferably introduced into the process chamber constructed as a showerhead through the gas inlet member. The showerhead has a venting plate extending parallel to a surface of the substrate holder facing the process chamber and having a plurality of venting holes for process gas to flow into the process chamber. The showerhead is both the top of the process chamber and the cooling element, but can also be in contact with the top of the process chamber. The showerhead has a cooling passage through which the coolant flows. The apparatus or method can have a plurality of coordinated control loops. In order to prevent the coolant from being heated to an unacceptable temperature, a cooling element control loop is provided. In the coolant control circuit, the temperature of the coolant and, in particular, the discharge temperature of the coolant can be maintained at a constant value by changing the mass flow rate of the coolant. However, it is sufficient to measure the temperature difference between the entry temperature and the discharge temperature only by the constant mass flow rate of the waste heat flow. In order to control this temperature difference for the rated value, the thermal power can be changed. This is done by a heating element control loop having a waste heat flow that acts as a control variable. According to another aspect of the invention, wherein the heat flow affects the temperature control, the rating of the heating controller for controlling the thermal power is the surface temperature measured on the substrate and/or the substrate holder. This surface temperature can be optically measured by a pyrometer. In particular, the electronic control unit, which is part of the control unit, receives a rating for controlling the surface temperature from the setpoint setting device, which in turn obtains the nominal value from the formulation programmed in the control system. In this arrangement, the temperature at the top of the process chamber is explicitly maintained at a particular temperature by the flushing gas composition, for example to ensure the desired chemical pre-reaction. In this case, the change in surface emissivity due to process deposition causes a deviation of the substrate temperature from the target value, and the deviation is compensated by correcting the rating of the heating device. The control device measures the heat flow and in particular the waste heat flow continuously or at time intervals, in which the heat flow of the coolant is determined. If the heat flow deviates from a preset value determined in, for example, a growth procedure "Golden Run" implemented under standard conditions, the rating of the surface temperature of the substrate or substrate holder is modified by the rating setting means. . In particular, when the degree of change of the heat flow relative to the standard heat flow reaches a preset value, the nominal value of the surface temperature is adjusted. The aging effect or coverage effect on the top of the process chamber can be compensated by rating adjustments or subsequent corrections. Ability to respond to long-term drift. In this aspect of the invention, where the physical properties of the layer thickness or layer do not permit optical measurement of the temperature of the layer, the variable pairs derived from the self-heat flow difference may also be used only for a short period of time, as the case may be. The rating of the heating control unit is corrected. Thereby, for example, the current waste heat flow can be determined during the deposition temperature of the layer which can be well determined by the pyrometer, so that the waste heat flow is used as a reference in the process of depositing an earlier layer of the subsequent process which does not support the optical temperature measurement. value. The heat flow of the completed deposition procedure can also be used as a reference value.

1‧‧‧Processing Room

2‧‧‧Substrate

3‧‧‧Shelf holder

4‧‧‧ substrate holder

5‧‧‧Heating element, heating device

6‧‧‧ substrate holder temperature

6'‧‧‧ substrate temperature

7‧‧‧Processing room top

8‧‧‧ gap

9‧‧‧Exhaust plate

9'‧‧‧ Cooling components

10‧‧‧heat power

11‧‧‧Heating device controller

12‧‧‧ Temperature measurement

13‧‧‧Cooling channel

14‧‧‧Import

15‧‧‧Export

16‧‧‧ thermometer

17‧‧‧ Groove

18‧‧‧ air cushion

19‧‧‧ Cover

20‧‧‧Thermal flow measuring device

21‧‧‧ gas flow controller

22‧‧‧ nitrogen influx

23‧‧‧ Hydrogen influx

24‧‧‧Exhaust port

25‧‧‧Amendments

26‧‧‧ Waste heat flow

27‧‧‧ throttle valve

28‧‧‧Rating setting device

29‧‧‧ Rating

Rt1‧‧‧heat flow resistance

Rt2‧‧‧heat flow resistance

Rt3‧‧‧heat flow resistance

Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 is a schematic cross-sectional view of a process chamber of the processing apparatus of the first embodiment, and FIG. 2 is a block diagram of a heat flow path from the heating device 5 to the cooling element 9 of the first embodiment, and FIG. 2 is a schematic view similar to FIG. 1, and FIG. 4 is a schematic view similar to FIG. 2 of the second embodiment.

Figure 1 shows, in a substantially schematic manner, a cross section of a process chamber of a CVD reactor as described in DE 10 2006 013 801 and the publication cited in the patent. The device is for depositing a III-V semiconductor layer on a substrate. To this end, a mixture of two or more process gases is fed together with a carrier gas into a gas inlet member in the form of a showerhead. The process gases may be hydrides of the elements of the V main group and organometallic compounds of the elements of the III main group. For example, trimethylgallium can be fed into the process chamber together with ammonia to produce a GaN layer in which a III-V group is deposited on one of the III-V substrates, but preferably on a germanium or sapphire substrate. Floor. The decomposition reaction of the process gas occurs not only on the surface of the heated substrate 2 but also on the side of the exhaust plate of the shower head facing the process chamber 1. The venting plate constitutes the top 7 of the process chamber. The venting plate 9 has an exhaust port 24 which is arranged in a showerhead shape. A cooling passage 13 through which the coolant passes extends between the exhaust ports 24. The gas inlet member constituting the cooling element 9, the IR heating device 5, and the substrate holder for supporting the substrate 2 provided between the shower head 9 and the IR heating device 5 are located in a hermetically sealed reactor chamber of the CVD reactor.

The symbol 6 indicates a measurement point at which the surface temperature of the substrate holder 4 can be measured. This operation is performed by a temperature measuring device, which may be a pyrometer. The pyrometer is disposed within the reactor housing outside of the process chamber and is capable of optically measuring the surface temperature of the substrate 2 and providing a temperature measurement 12 that is delivered to the heating device controller 11, the heating device controller being capable of The temperature measurement is used as a control variable for feeding the thermal power 10 into the heating element 5, thereby heating the surface of the substrate holder 4 and in particular the substrate 2 to the process temperature. In addition, a measuring point 6' can be provided for determining the surface temperature of the substrate 2. For example, the temperature measured there can be used for rating adjustment.

The coolant is fed into the cooling passage 13 through the inlet 14 through the cooling passage and out of the cooling passage 13 through the outlet 15. The temperature of the coolant leaving the cooling passage 13 can be measured by the thermometer 16. The temperature difference between the measured value of the discharge temperature of the coolant and the inlet temperature of the coolant is measured.

The heat flow measuring device 20 can measure the heat flow that flows out of the cooling element 9 through the cooling water and through the outlet 15. The temperature measured by the thermometer 16 can be used for this purpose. The waste heat flow system is indicated by element symbol 26.

Rt1 represents the first heat flow resistance, which is affected by the thermal conductivity of the substrate 2 and the thermal resistance between the substrate 2 and the substrate holder. This heat flow resistance Rt1 remains substantially unchanged during the coating process with the remaining program parameters unchanged.

Rt2 denotes a second heat flow resistance which represents the heat transfer path between the substrate surface and the process chamber top 7, i.e., the bottom side of the cooling element 9. The heat flow through the first heat flow resistance Rt1 is substantially achieved by heat conduction. The heat flow through the second heat flow resistance Rt2 is substantially achieved by heat radiation and depends on the emissivity of the substrate 2 and the process chamber top 7 or the surface of the cooling element 9 facing the wall of the process chamber 1. The emissivity changes during the implementation of the coating process for a number of reasons. First the surface may age first. However, it is also important to create a coating on the surface that affects optical properties such as emissivity and reflectivity. Therefore, even if the remaining program parameters set substantially in accordance with the recipe used are kept constant, such characteristics of the process chamber are also changed.

Since the second heat flow resistance Rt2 changes, the temperature of the substrate surface may change.

In the case where the substrate 2 is transparent to the wavelength used (for example, the sapphire substrate is transparent to 400 nm light), in particular, the surface temperature of the substrate 2 cannot be measured by high temperature. In the process of depositing a GaN layer to a sapphire substrate, when a sufficient layer thickness is reached, the surface temperature of the substrate 2 or layer can be reliably measured. Therefore, at the beginning of the growth of such a layer, not only the temperature measurement is performed by the temperature measurement value 12, but also the control value of the heat flow is controlled to correct the rated value. This correction reflects the difference between the actual value of the waste heat stream 26 and the nominal value.

As an alternative to the deviation of the waste heat flow, the deviation of the thermal power from the desired reference value can also be used to derive the temperature correction. This operation is preferably carried out in a device having a rating device 28 for varying the rating 29 for the heating device controller 11. The substrate holder temperature 6, in particular the temperature of the surface of the substrate holder 4 facing the process chamber, is determined by a temperature measuring device such as a pyrometer. This temperature constitutes the rating of the heating device controller 11 for controlling the thermal power 10. The surface temperature of the substrate holder 4 is controlled for the rated value 29. The rated value 29 is set by the rating setting means 28. The rating setting means 28 obtains a nominal value 29 from an electronic control system that determines the rating based on the recipe.

The waste heat stream 26 is permanently measured by the heat flow measuring device 20. If the waste heat flow deviates from the standard value by a certain amount within a certain period of time, the set value setting means 28 changes the rated value 29, wherein the substrate temperature is raised or lowered. This responds to the effects caused by the coating on the top 7 of the process chamber. In general, thermal power can be observed instead of waste heat.

However, when the substrate temperature 6' can be measured, the substrate temperature can be sent to the set value setting device 28 as the correction amount 25.

Fig. 2 schematically shows the heat flow path from the heating element 10 through the two heat flow resistors Rt1 and Rt2 to the cooling element 9. The waste heat flow 26 is measured by the thermal flow measuring device 20 and compared to the nominal value. A control variable 25 for controlling the heating device controller 11 is thus obtained, the control variable of which is the thermal power 10.

FIG. 3 shows, in a cross-sectional view, an important element of a CVD reactor for the description of the invention, which is constructed as described for example in DE 10 2009 003 624 A1 or DE 10 2006 018 514 A1.

The process gas flows into the process chamber 1 through a gas inlet member (not shown), and the process gases may also be a hydride of the V main group and an organometallic compound of the III main group. The process gas flows in with the carrier gas. The process gases are reacted in the process chamber 1 and, in particular, on the surface of the substrate 2 disposed in the process chamber 1 to form a III-V layer. As described in the first embodiment, the carrier gas and the gaseous reaction product exit the process chamber 1 through the gas outlet, and the gas outlet is connected to the vacuum pump, so that a low pressure can be set in the process chamber 1.

The substrate holder 4 is optically measured by a temperature transmitting measuring element such as a thermocouple 6 or a fiber optic cable, and the substrate holder is heated from below by a heating device 5. The heating device 5 may be an RF heating device that generates eddy currents in the substrate holder 4 to inductively heat the substrate holder 4. The temperature measurement 12 obtained by the measuring element 6 is supplied to a heating device controller 11, which provides the thermal power 10 acting as a steering variable employed when the heating element 5 is in operation.

The substrate holder 3 is placed on the substrate holder 4. The substrate holder 3 is located in the recess 17 on the air cushion 18. The gas flowing into the air cushion 18 can rotate the substrate holder 3 about an axis. One or several substrates 2 are provided on the substrate holder 3.

In the case where the program parameters are the same, the first heat flow resistance Rt1 is substantially nearly unchanged or only slightly changed in the coating process. However, if the program parameters are changed, the heat flow resistance Rt1 may also change. If the gas fed into the air gap constituting the air cushion 18 changes in its heat transfer characteristics, Rt1 also changes. The successive coating steps in the formulation are each carried out with different program parameters, since the layer sequences comprising the different layers are successively deposited. However, program steps that are in the same position in the same recipe have the same program parameters.

The process chamber 1 is customized through the substrate 2 at the bottom side, and the process chamber is customized at the top side by, for example, the process chamber top 7 made of graphite. The top 7 of the process chamber is heated by the radiant heat emitted by the substrate holder 3 and the substrate 2. The route between the surface of the substrate and the top 7 of the process chamber constitutes a second heat flow resistance Rt2 which is affected by the optical properties of the surface of the substrate 2, the substrate holder 3 and the top 7 of the process chamber. On the one hand, due to natural aging, and on the other hand due to the coating in the coating procedure, the emissivity, reflectivity and absorption capacity of these surfaces vary with time.

Between the top 7 of the process chamber and the bottom side of the wall formed by the cooling element 9, a gap 8 is formed which is flushed by a flushing gas which is composed of a mixture of two gases having mutually different thermal conductivity or heat capacity.

The cooling element 9 has a cooling passage 13 into which the inlet 14 feeds the coolant. The heated coolant in the cooling passage 13 exits the cooling passage 13 through the outlet 15. The discharge temperature is measured by a thermometer 16.

The waste heat flow 26 is measured by a thermal flow measuring device 20 symbolically shown in FIG. This waste heat flow can be obtained from the heat capacity of the coolant, the mass flow rate, and the temperature difference between the inlet and outlet temperatures.

A gas flow controller 21 is provided for controlling the flow of gas into the two different gases entering the gap 8. In particular, a gas flow controller 21 for controlling the nitrogen inflow amount 22 and the hydrogen inflow amount 23 entering the gap 8 is provided. By adjusting the mixing ratio between hydrogen and nitrogen, the thermal conductivity in the gap 8 can be affected, thereby affecting the magnitude of the third heat flow resistance Rt3. The varying heat flow resistance Rt2 can be compensated by changing the heat flow resistance Rt3. The change in the thermal flow resistance Rt3 is independent of the component tolerances that affect the thermal characteristics of the gap 8. By varying the gas composition, it is possible to compensate for different gap heights, but also for different emissivity of the surface defining the gap.

In the embodiment shown in FIG. 3, the first heat flow resistance Rt1 is determined by the thermal conductivity of the air gap 18 and the substrate holder 3, the substrate 2, and the substrate holder 4. On the other hand, in the region adjacent to the substrate 2, the heat flow resistance is determined by the substrate holder 4 and the cover 19 abutting against the substrate holder 4.

Fig. 4 schematically shows heat flow resistances Rt1, Rt2 and Rt3 which affect the heat flow from the heating element 5 to the cooling element 9, wherein the heat flow resistance Rt3 is a controllable heat flow resistance. The control variable is obtained from the control loop, and the control variable of the control loop is the exhaust heat 26. The latter is maintained at a constant value by the controller 21.

The equivalent circuit diagrams in Figures 2 and 4 greatly simplify the actual physical conditions. The heat flow generated by the heating device 5 passes only partially through the substrate holder 4 and the substrate holder 3 and through the substrate 2. However, this portion of the heat flow generated by the thermal power 10 can be regarded as constant during the observation, and therefore, a substantially constant ratio of the thermal power 10 is radiated as radiant heat from the surface of the substrate holder 3 and the surface of the substrate 2 into the process chamber 1 .

For physical reasons, the heat radiated by the substrate 2 and the substrate holder 3 also reaches only the top portion 7 of the process chamber. For physical reasons, the heat reaching the top 7 of the process chamber also only partially passes through the gap 8 to the cooling element 9.

Preferably, the temperature of the substrate 2, and particularly the surface temperature of the substrate 2, is controlled to a substantially constant value by the apparatus of the present invention and the method of the present invention without the need to explicitly measure the temperature. According to the invention, the thermodynamically relevant properties of the CVD reactor are controlled by the controller to maintain the heat flow, particularly the waste heat stream 26, at a constant value. By way of example, the embodiments show the effect of the thermal power of the heating element 5 and the effect of the additional heat flow resistance Rt3 in the heat transfer path between the heating element 5 and the cooling element 9.

The controllers 11, 18, 21 can be separate electronic devices. However, the controllers 11, 18, 21 can also be constructed of an electronic, in particular programmed, control device. The controllers 11, 18, 21 can be PID controllers. In the embodiment shown in FIG. 1 and FIG. 2, the temperature measurement sensor 6 can also be selected for temperature control, provided that the temperature measurement sensor can accurately determine the substrate in terms of process technology. 2 surface temperature. In the case where the surface temperature of the substrate 2 cannot be measured accurately enough, the temperature control is performed by the heat flow.

The foregoing embodiments are used to illustrate the inventions contained in the entire application, and the inventions are independently constructed at least separately from the prior art by combining the following features, wherein two or more of the combinations of features may be combined. All combined with each other, namely:

A method characterized in that temperature control is affected by heat flow.

A device characterized in that temperature control is affected by heat flow.

A method or apparatus, characterized in that the temperature control system has at least one control loop, wherein the heat flow is a control variable, or the varying heat flow causes a temperature rating correction.

A method or apparatus characterized in that the heat flow is measured by a heat flow detecting member 20.

A method or apparatus characterized in that the heat flow used in the temperature rating correction or in the temperature control is a waste heat stream 26 or a thermal power 10.

A method or a device, characterized in that the cooling element 9 has a cooling passage 13 through which the coolant passes, the coolant passing the waste heat outward through the mass flow, wherein the temperature difference of the coolant is determined for determining the waste heat flow 26. And its mass flow through the cooling passage 13.

A method or apparatus characterized in that the thermal power 10 of the heating element 5 is varied in order to control the heat flow.

A method or apparatus characterized by varying a variable heat flow resistance Rt3 in order to control the heat flow.

A method or a device, characterized in that, in order to control the heat flow, a mixture of gases of different thermal conductivity is fed into a gap 8 between the top 7 of the process chamber and the cooling element 9, wherein the mixing ratio is varied.

A method or a device, characterized in that the rating 29 of the heating device controller 11 for controlling the thermal power 10 is the surface temperature measured on the substrate holder 4 or on the substrate 2, in the case of a change in heat flow, The set value 29 is changed by the set value setting means 28.

A method or apparatus characterized in that the rated value 29 is changed in a case where the degree of change in the integral determined by the transmission time of the deviation of the heat flow from the set standard value reaches the set amount.

All of the disclosed features (as a single feature or combination of features) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the files are also included in the scope of the patent application of the present application. The subsidiary item is characterized by its characteristics for the features of the prior art improvement of the prior art, and its purpose is mainly to carry out a divisional application on the basis of the claims. Furthermore, the inventions given in each of the claims may have one or more of the features set forth in the foregoing, particularly in the form of the element symbol and/or in the description of the symbol. The invention also relates to embodiments in which individual features of the aforementioned features are not implemented, particularly where such features are obviously redundant or can be replaced by technically equivalent means for a particular use.

Claims (12)

 A method of heat treating at least one substrate by heat flow at a controlled temperature in a process chamber of a processing apparatus, wherein the heat flow is from a heating element that receives thermal power (10) from the outside and heats the substrate holder (4) (5) Starting through the substrate (2) heated by the substrate holder (4) and the process chamber (1) to reach a cooling element that leads the waste heat flow (26) outward and cools the top (7) of the process chamber (9) The temperature control system has at least one control loop, wherein the heat flow is a control variable, characterized in that a variable heat flow resistance (Rt3) is changed in order to control the heat flow.    A device for heat treating at least one substrate by a heating element at a controlled temperature in a process chamber of the device, the heating element being generated from the heatable element (5) by inputting thermal power (10) from the outside The heated substrate holder (4) passes through a heat flow through the substrate (2) heated by the substrate holder (4) and the process chamber (1) to a cooling element (9) that cools the top of the process chamber, the cooling element ( 9) Exporting the waste heat stream (26) outwardly, wherein the temperature control system has at least one control loop, wherein the heat flow is a control variable characterized by a variable heat flow resistance (Rt3) for controlling the heat flow.    The method of claim 1 or the device of claim 2, wherein the heat flow is measured by the heat flow detecting member (20).    The method or apparatus of claim 1 or 2, wherein the heat flow used in the temperature control is the waste heat flow (26) or the thermal power (10).    The method or apparatus of claim 1 or 2, wherein the cooling element (9) has a cooling passage (13) through which the coolant passes, the coolant passing the waste heat outward through the mass flow, wherein the waste heat is measured Flow (26), the temperature difference of the coolant and its mass flow through the cooling passage (13) are determined.    The method or apparatus of claim 1 or 2, wherein, in order to control the heat flow, a mixture of gases having different thermal conductivity is fed into a gap (8) between the top of the process chamber (7) and the cooling element (9) , wherein the mixing ratio is changed.    A method or apparatus for heat treating at least one substrate by a heating element at a controlled temperature in a process chamber of the apparatus, the heating element being self-heatable by inputting thermal power (10) from the outside ( 5) The heated substrate holder (4) passes through the substrate (2) heated by the substrate holder (4) and the heat flow of the process chamber (1) to the cooling element (9) for cooling the top of the process chamber, the cooling The component (9) directs the waste heat flow (26) outwardly, wherein a control loop regulates the actual temperature to a nominal temperature, and wherein a component for determining the heat flow is provided, wherein the change in the heat flow results in a temperature rating Correction of the value.    The method or apparatus of claim 7, wherein the heat flow used in the temperature rating correction is the waste heat flow (26) or the thermal power (10).    A method or apparatus for heat treating at least one substrate by a heating element at a controlled temperature in a process chamber of the apparatus, the heating element being self-heatable by inputting thermal power (10) from the outside ( 5) The heated substrate holder (4) passes through the substrate (2) heated by the substrate holder (4) and the heat flow of the process chamber (1) to the cooling element (9) for cooling the top of the process chamber, the cooling The element (9) directs the waste heat flow (26) outwardly, wherein the temperature control system has at least one control loop, wherein the heat flow is a control variable, characterized in that the heat flow used in the temperature control is the waste heat flow (26) ) or the thermal power (10).    The method or apparatus of claim 9, wherein the heating power (10) of the heating element (5) is varied in order to control the heat flow.    The method or apparatus of claim 10, wherein the rating (29) of the heating device controller (11) for controlling the thermal power (10) is measured on the substrate holder (4) or on the substrate (2). The surface temperature is changed by the rating setting means (28) in the case of a change in the heat flow (29).    The method of claim 11, wherein the rated value (29) is changed in a case where the degree of change in the integral determined by the transmission time of the deviation of the heat flow from the set standard value reaches the set amount.