TW201843344A - Method and device for the thermal treatment of a substrate - Google Patents
Method and device for the thermal treatment of a substrate Download PDFInfo
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- TW201843344A TW201843344A TW107108628A TW107108628A TW201843344A TW 201843344 A TW201843344 A TW 201843344A TW 107108628 A TW107108628 A TW 107108628A TW 107108628 A TW107108628 A TW 107108628A TW 201843344 A TW201843344 A TW 201843344A
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- heat flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明係有關於在處理裝置之製程室中在經控制之溫度下藉由熱流對至少一個基板進行熱處理的方法及裝置,其中該熱流從被自外部輸入熱功率並將基板座加熱之加熱元件出發穿過經基板座加熱之基板以及該製程室到達將廢熱流向外導出並將製程室頂部冷卻之冷卻元件。 The present invention relates to a method and apparatus for heat treating at least one substrate by heat flow at a controlled temperature in a process chamber of a processing apparatus, wherein the heat flow is from a heating element that inputs thermal power from the outside and heats the substrate holder The substrate is driven through the substrate holder and the processing chamber reaches a cooling element that conducts the waste heat flow outward and cools the top of the process chamber.
同類型的裝置被應用在半導體技術中,用以為基板塗佈層、特別是半導體層。基板貼靠在基板座上或基板座所承載之可圍繞軸線旋轉的基板架上。自背離基板的一側為基板座施加能量。為此設有的加熱元件可為紅外線輻射器或RF線圈。基板之待塗佈的表面面向製程室,其中將在化學反應後至少部分分解的製程氣體饋送入此製程室,故能夠在基板之表面上產生層。藉由冷卻元件將與基板相對之製程室頂部冷卻至遠低於基板座溫度的溫度。基於此溫差形成自基板座起穿過基板及製程室至經冷卻元件冷卻之製程室頂部為止的熱流。此熱流取決於處理裝置之設於加熱元件與冷卻元件之間的元件的熱傳遞特性,其中,在程序參數實質上保持不變的情況下,在塗佈程序期間自基板座至基板的熱傳遞特性實質上保持不變。自基板座起至基板表面為止的熱輸送路線的導熱特性實質上由固體之導熱能力決定,其中,就在氣墊上旋轉基板架而言,還 需要將透過氣隙之熱傳遞考慮在內。變化的氣流亦導致熱輸送改變。此氣隙通常同位於基板與基板架之間之氣隙一起形成基板座與基板之間的最大熱輸送阻力。 Devices of the same type are used in semiconductor technology for coating a substrate, in particular a semiconductor layer. The substrate abuts against the substrate holder or the substrate holder that is carried by the substrate holder and rotatable about the axis. Energy is applied to the substrate holder from a side facing away from the substrate. The heating element provided for this purpose can be an infrared radiator or an RF coil. The surface of the substrate to be coated faces the process chamber, wherein a process gas that is at least partially decomposed after the chemical reaction is fed into the process chamber, so that a layer can be created on the surface of the substrate. The top of the process chamber opposite the substrate is cooled by the cooling element to a temperature well below the temperature of the substrate holder. Based on this temperature difference, a heat flow from the substrate holder through the substrate and the process chamber to the top of the process chamber cooled by the cooling element is formed. This heat flow depends on the heat transfer characteristics of the components of the processing device disposed between the heating element and the cooling element, wherein the heat transfer from the substrate holder to the substrate during the coating process is maintained substantially unchanged in the program parameters. The characteristics remain essentially unchanged. The thermal conductivity of the heat transfer path from the base of the substrate to the surface of the substrate is substantially determined by the thermal conductivity of the solid. In the case of rotating the substrate holder on the air cushion, it is also necessary to take into account the heat transfer through the air gap. The varying air flow also causes the heat transfer to change. This air gap generally forms the maximum heat transfer resistance between the substrate holder and the substrate together with the air gap between the substrate and the substrate holder.
自基板表面起穿過製程室至製程室頂部為止的熱傳遞一方面透過藉由位於製程室中之氣體實現的導熱進行,一小部分亦透過對流進行,但實質上透過熱輻射進行,並且取決於基板及製程室頂部之表面的發射率及反射率。製程室頂部之表面特別是具有隨時間變化的發射率。此為對製程室頂部表面進行寄生式塗佈的後果,但亦為老化的後果。 The heat transfer from the surface of the substrate through the process chamber to the top of the process chamber is performed on the one hand by heat conduction by the gas located in the process chamber, and a small portion is also transmitted through convection, but substantially through heat radiation, and depends on Emissivity and reflectivity on the surface of the substrate and the top of the process chamber. The surface of the top of the process chamber has, in particular, an emissivity that varies with time. This is a consequence of parasitic coating of the top surface of the process chamber, but it is also a consequence of aging.
溫度控制的目的在於:將基板的發生化學反應的表面的溫度保持在一恆定值,其中,基板表面應儘可能在其整個面的範圍內具有同一溫度,此溫度必須在整個塗佈程序中以及在後續的塗佈程序中保持恆定。為了量測表面溫度,在先前技術中使用高溫計,特別是以400nm之波長工作的高溫計。藉由此種高溫計以光學方式確定基板之表面溫度,以及視情況而定亦確定基板座之表面溫度。在採用矽基板的情況下,可藉由此種高溫計確定基板之表面溫度。在採用藍寶石基板時則無法實現此方案。對於此波長的光而言藍寶石係透明。若例如將GaN層沉積至藍寶石基板,則由於基板之透明性,藉由此種高溫計最初僅量測位於基板下方之基板架或基板座之表面的溫度。僅當已在基板上沉積足夠厚的GaN層的情況下,方可藉由高溫計對基板或沉積於基板上之層的表面溫度進行量測。 The purpose of temperature control is to maintain the temperature of the chemically reacted surface of the substrate at a constant value, wherein the surface of the substrate should have the same temperature as much as possible over its entire surface, which temperature must be throughout the coating process and It remains constant during subsequent coating procedures. In order to measure the surface temperature, pyrometers have been used in the prior art, in particular pyrometers operating at wavelengths of 400 nm. The surface temperature of the substrate is optically determined by such a pyrometer, and the surface temperature of the substrate holder is also determined as the case may be. In the case of using a tantalum substrate, the surface temperature of the substrate can be determined by such a pyrometer. This solution cannot be achieved with a sapphire substrate. The sapphire is transparent to light of this wavelength. If, for example, a GaN layer is deposited on a sapphire substrate, the temperature of the surface of the substrate holder or substrate holder located under the substrate is initially measured by such a pyrometer due to the transparency of the substrate. The surface temperature of the substrate or the layer deposited on the substrate can be measured by a pyrometer only if a sufficiently thick GaN layer has been deposited on the substrate.
因此,在位於加熱元件與冷卻元件之間的熱傳遞路線中,沿熱流方向存在數個熱流阻,其大小影響加熱元件與冷卻元件 之間的溫度分佈以及基板溫度。 Thus, in the heat transfer path between the heating element and the cooling element, there are several heat flow resistances along the direction of heat flow, the magnitude of which affects the temperature distribution between the heating element and the cooling element and the substrate temperature.
本發明之目的在於:如此對同類型的方法或同類型的裝置進行改進,使得在接續進行的生長程序中,能夠在其他製程參數相同的情況下實現同一基板溫度。 The object of the present invention is to improve the same type of method or the same type of device in such a way that the same substrate temperature can be achieved with the same process parameters in the subsequent growth process.
本發明用以達成上述目的之解決方案為在申請專利範圍中給出之發明,其中,附屬項不僅為在兩個並列請求項中給出之發明的較佳進一步方案,亦為用以達成上述目的的獨立解決方案。 The solution to achieve the above object of the present invention is the invention given in the scope of the patent application, wherein the subsidiary item is not only a preferred further embodiment of the invention given in the two parallel claims, but also A stand-alone solution for the purpose.
在本發明之第一方案中,將可變的熱流阻改變。在此方案中,在自基板座起至冷卻元件為止的熱輸送路線中,並且特別是在製程室頂部與冷卻元件之間設有一元件,其導熱特性、特別是導熱能力係可變。該元件可由可動部件、例如可動的固體建構。但較佳透過可被沖洗氣體流過的間隙形成該元件。熱量必須穿過此間隙自基板座流動至冷卻元件,故此間隙構成熱流阻。可如下改變此熱流阻:例如將導熱能力不同的氣體饋送入該間隙。特別是採用以下方案:將由兩個導熱特性或熱容差異較大之氣體構成的混合物饋送入該間隙。特別是將由氫氣與氮氣構成的混合物饋送入該間隙。如此改變該二種氣體之混合比例,使得冷卻元件所向外導出的熱流保持恆定。在此方案中可設有至少兩個控制迴路。第一控制迴路對基板座溫度進行控制。在此較佳透過RF加熱裝置對該基板座進行加熱。在該基板座內或在基板座之邊緣上設有溫度量測元件。該溫度量測元件可為光纜之與高溫計連接的末端。但該溫度量測元件亦可為熱電偶,其提供用作針對熱功率控制的控制變數的熱電動勢。 可在基板座之朝向加熱裝置的一側上進行溫度量測。第二控制迴路將廢熱流調節至額定值。在此亦設有熱流檢測構件,其透過冷卻劑之質量流量及溫度或進入溫度與排出溫度之間的溫差測定廢熱流,藉由該第二控制迴路使得該廢熱流保持恆定。該經沖洗氣體沖洗之間隙實質上在該製程室之設有基板的整個區域內平行於基板座表面或製程室頂部延伸。藉由氣流控制器能夠改變間隙中之氣體混合物,使得冷卻劑之廢熱流保持恆定。藉由加熱元件控制系統來控制熱功率。冷卻元件與製程室頂部之間的間隙可處於毫米的範圍內。由於製造公差,在將製程室頂部更換為另一個的情況下,間隙寬度可能發生變化。藉由本發明之方法亦將此類公差之效應補償為溫度平衡。同樣能夠對界定間隙之表面的發射率的改變進行補償。該間隙較佳在冷卻元件與界定製程室之製程室頂部之間延伸。但本發明亦提出:在溫度控制過程中亦使用表示熱流特徵的工作參數。根據本發明,透過熱流影響溫度控制。根據本發明之另一態樣,本發明提出:該溫度控制裝置具有至少一個控制迴路,其中熱流為控制變數。在本發明之方法中,將熱功率自外部輸送至加熱元件。該加熱元件對基板座進行加熱。基於基板座與冷卻元件之間的溫差形成自加熱元件至冷卻元件的熱流。該熱流穿過經基板座加熱之基板以及製程室直至到達將製程室頂部冷卻的冷卻元件。根據本發明,設有熱流檢測構件,其用於在預定的位置上量測熱流。在本發明之一尤佳方案中,測定該廢熱流並將其用於溫度控制。為此,本發明之裝置具有電子控制裝置,其係設置及程式化,從而將根據冷卻劑所導出之熱量測定的控制參數用於溫度控制。該冷卻元件特別是具有供冷卻劑穿過的冷卻通道。可藉由冷卻控制迴路將冷卻劑保持在 一恆定的冷卻溫度。但僅採用以下較佳方案便已足夠:冷卻劑之恆定的質量流量穿過冷卻通道流動。冷卻劑之質量流量以及冷卻劑之排出溫度與進入溫度之間的差值共同充當針對散熱的尺度。該二個變數之乘積以及冷卻劑之比熱容構成測定的廢熱流。亦可改變質量流量,例如用以將冷卻劑之排出溫度保持在一恆定值。根據本發明之一態樣,在此較佳在恆定的冷卻劑流量下將該廢熱流用作控制變數,從而將基板之溫度保持在一恆定值。根據一方案,首先將該額定溫度保持在一恆定值,或對獲得額定溫度所需之熱功率進行觀測。若發現熱功率相對於參考值升高,則可提高溫度之額定值。根據一方案,作為熱功率的替代,可使用廢熱流差異來確定額定溫度補償。在此方案中,熱流構成加熱元件控制迴路之至少一個控制變數。至少在藉由另一特別是光學溫度量測儀無法測定基板表面溫度之可靠值的時間內採用此方案。但若條件允許對基板表面溫度進行光學測定,則亦可根據基板溫度之額定值調節熱功率。此方案特別是應用於以下處理裝置:其中一或數個基板貼靠在基板座上,透過電阻加熱裝置或透過IR加熱裝置自背側對該基板座進行加熱。特別是在此方案中,較佳透過氣體入口構件將製程氣體導入建構為蓮蓬頭的製程室。該蓮蓬頭具有排氣板,其平行於基板座之面向製程室的表面延伸並具有數個透氣孔,以供製程氣體流入製程室。該蓮蓬頭同時為製程室頂部及冷卻元件,但亦可與製程室頂部接觸。該蓮蓬頭具有供冷卻劑流過的冷卻通道。該裝置或該方法可具有數個相互配合的控制迴路。為了避免冷卻劑被加熱至不允許的溫度,設有冷卻元件控制迴路。在該冷卻劑控制迴路中,可透過改變冷卻劑之質量流量將冷卻劑之溫度以及特別是冷卻劑之排出溫度保持在 一恆定值。但僅透過在廢熱流之質量流量恆定的情況下量測進入溫度與排出溫度之間的溫差便已足夠。為了針對額定值控制此溫差,可改變熱功率。藉由加熱元件控制迴路來進行此操作,該加熱元件控制迴路具有充當控制變數的廢熱流。根據本發明之另一態樣,其中透過熱流影響溫度控制,加熱控制器之用於控制熱功率的額定值為在基板及/或基板座上測得之表面溫度。可藉由高溫計以光學方式量測此表面溫度。特別是為控制裝置之部件的電子控制裝置自額定值設定裝置接收用於控制表面溫度的額定值,該額定值設定裝置又自在控制系統中程式化之配方獲得該額定值。在此方案中,藉由沖洗氣體組成將製程室頂部之溫度明確保持在一特定溫度,例如用以確保期望的化學預反應。在此情形下,因製程沉積而引起之表面發射率的變化導致基板溫度相對目標值的偏差,透過修正加熱裝置額定值對此偏差進行補償。該控制裝置連續地或以時間間隔測定熱流以及特別是廢熱流,在該廢熱流中測定冷卻劑之熱流。若該熱流偏離例如在標準條件下實施之生長程序「參照運行(Golden Run)」中測定之預設值,則藉由額定值設定裝置修改該針對基板或基板座之表面溫度的額定值。特別是當熱流相對於標準熱流的變化程度達到預設值的情況下,調整表面溫度之額定值。透過額定值調整或後續修正能夠對製程室頂部上之老化效應或覆蓋效應進行補償。能夠對長期漂移進行響應。就本發明之此態樣而言,在層厚或層之物理特性不允許對層之溫度進行光學測定的情況下,視情況而定亦可僅短期地藉由自熱流差推導出之變數對加熱控制裝置之額定值進行修正。藉此例如能夠在沉積溫度能夠藉由高溫計良好測定的層的過程中測定當前廢熱流,從而將該廢熱流在沉積後續製程之不支持光學 溫度測定的更早的層的過程中用作參考值。亦可將完成之沉積程序之熱流用作參考值。 In the first aspect of the invention, the variable heat flow resistance is varied. In this solution, an element is provided in the heat transport path from the base of the substrate to the cooling element, and in particular between the top of the process chamber and the cooling element, the thermal conductivity, in particular the thermal conductivity, is variable. The element may be constructed from a movable component, such as a movable solid. Preferably, however, the element is formed by a gap through which a flushing gas can flow. Heat must flow through the gap from the substrate holder to the cooling element, so the gap constitutes a heat flow resistance. This heat flow resistance can be changed as follows: for example, a gas having a different thermal conductivity is fed into the gap. In particular, a solution is adopted in which a mixture of two gases having a large difference in thermal conductivity or heat capacity is fed into the gap. In particular, a mixture of hydrogen and nitrogen is fed into the gap. The mixing ratio of the two gases is varied such that the heat flow outwardly of the cooling element remains constant. At least two control loops can be provided in this solution. The first control loop controls the substrate holder temperature. Preferably, the substrate holder is heated by an RF heating device. A temperature measuring element is provided in the substrate holder or on the edge of the substrate holder. The temperature measuring component can be the end of the cable that is connected to the pyrometer. However, the temperature measuring element can also be a thermocouple that provides a thermoelectromotive force that serves as a control variable for thermal power control. Temperature measurement can be performed on the side of the substrate holder that faces the heating device. The second control loop regulates the waste heat flow to a nominal value. There is also a heat flow detecting member which measures the waste heat flow through the mass flow rate of the coolant and the temperature difference between the inlet temperature and the discharge temperature, and the waste heat flow is kept constant by the second control loop. The gap of the rinse gas rinsing extends substantially parallel to the substrate seat surface or the top of the process chamber throughout the entire area of the process chamber provided with the substrate. The gas mixture in the gap can be varied by the air flow controller such that the waste heat flow of the coolant remains constant. The thermal power is controlled by a heating element control system. The gap between the cooling element and the top of the process chamber can be in the range of millimeters. Due to manufacturing tolerances, the gap width may vary when the top of the process chamber is changed to another. The effect of such tolerances is also compensated for by the method of the invention as a temperature balance. It is also possible to compensate for changes in the emissivity of the surface defining the gap. The gap preferably extends between the cooling element and the top of the process chamber of the custom process chamber. However, the invention also proposes that operating parameters representative of the characteristics of the heat flow are also used in the temperature control process. According to the invention, temperature control is affected by heat flow. According to another aspect of the invention, the invention provides that the temperature control device has at least one control loop, wherein the heat flow is a control variable. In the method of the invention, thermal power is delivered from the outside to the heating element. The heating element heats the substrate holder. A heat flow from the heating element to the cooling element is formed based on a temperature difference between the substrate holder and the cooling element. The heat flow passes through the substrate heated by the substrate holder and the process chamber until reaching a cooling element that cools the top of the process chamber. According to the invention, a heat flow detecting member is provided for measuring the heat flow at a predetermined position. In a preferred embodiment of the invention, the waste heat stream is measured and used for temperature control. To this end, the device of the present invention has an electronic control device that is arranged and programmed to use control parameters determined from the heat derived from the coolant for temperature control. In particular, the cooling element has a cooling channel through which the coolant passes. The coolant can be maintained at a constant cooling temperature by a cooling control loop. However, it is sufficient to use only the following preferred solution: a constant mass flow of the coolant flows through the cooling passage. The mass flow rate of the coolant and the difference between the discharge temperature of the coolant and the entry temperature together serve as a measure for heat dissipation. The product of the two variables and the specific heat capacity of the coolant constitute the measured waste heat flow. The mass flow can also be varied, for example to maintain the discharge temperature of the coolant at a constant value. According to one aspect of the invention, the waste heat flow is preferably used as a control variable at a constant coolant flow rate to maintain the temperature of the substrate at a constant value. According to one aspect, the nominal temperature is first maintained at a constant value or the thermal power required to obtain the rated temperature is observed. If the thermal power is found to rise relative to the reference value, the temperature rating can be increased. According to one aspect, as an alternative to thermal power, the difference in waste heat flow can be used to determine the nominal temperature compensation. In this arrangement, the heat flow constitutes at least one control variable of the heating element control loop. This solution is employed at least during a time when the reliability of the surface temperature of the substrate cannot be determined by another, in particular, optical temperature measuring instrument. However, if the conditions permit optical measurement of the surface temperature of the substrate, the thermal power can also be adjusted according to the rated value of the substrate temperature. This solution is particularly applicable to processing devices in which one or more substrates are placed against a substrate holder, and the substrate holder is heated from the back side through a resistance heating device or through an IR heating device. In particular, in this embodiment, the process gas is preferably introduced into the process chamber constructed as a showerhead through the gas inlet member. The showerhead has a venting plate extending parallel to a surface of the substrate holder facing the process chamber and having a plurality of venting holes for process gas to flow into the process chamber. The showerhead is both the top of the process chamber and the cooling element, but can also be in contact with the top of the process chamber. The showerhead has a cooling passage through which the coolant flows. The apparatus or method can have a plurality of coordinated control loops. In order to prevent the coolant from being heated to an unacceptable temperature, a cooling element control loop is provided. In the coolant control circuit, the temperature of the coolant and, in particular, the discharge temperature of the coolant can be maintained at a constant value by changing the mass flow rate of the coolant. However, it is sufficient to measure the temperature difference between the entry temperature and the discharge temperature only by the constant mass flow rate of the waste heat flow. In order to control this temperature difference for the rated value, the thermal power can be changed. This is done by a heating element control loop having a waste heat flow that acts as a control variable. According to another aspect of the invention, wherein the heat flow affects the temperature control, the rating of the heating controller for controlling the thermal power is the surface temperature measured on the substrate and/or the substrate holder. This surface temperature can be optically measured by a pyrometer. In particular, the electronic control unit, which is part of the control unit, receives a rating for controlling the surface temperature from the setpoint setting device, which in turn obtains the nominal value from the formulation programmed in the control system. In this arrangement, the temperature at the top of the process chamber is explicitly maintained at a particular temperature by the flushing gas composition, for example to ensure the desired chemical pre-reaction. In this case, the change in surface emissivity due to process deposition causes a deviation of the substrate temperature from the target value, and the deviation is compensated by correcting the rating of the heating device. The control device measures the heat flow and in particular the waste heat flow continuously or at time intervals, in which the heat flow of the coolant is determined. If the heat flow deviates from a preset value determined in, for example, a growth procedure "Golden Run" implemented under standard conditions, the rating of the surface temperature of the substrate or substrate holder is modified by the rating setting means. . In particular, when the degree of change of the heat flow relative to the standard heat flow reaches a preset value, the nominal value of the surface temperature is adjusted. The aging effect or coverage effect on the top of the process chamber can be compensated by rating adjustments or subsequent corrections. Ability to respond to long-term drift. In this aspect of the invention, where the physical properties of the layer thickness or layer do not permit optical measurement of the temperature of the layer, the variable pairs derived from the self-heat flow difference may also be used only for a short period of time, as the case may be. The rating of the heating control unit is corrected. Thereby, for example, the current waste heat flow can be determined during the deposition temperature of the layer which can be well determined by the pyrometer, so that the waste heat flow is used as a reference in the process of depositing an earlier layer of the subsequent process which does not support the optical temperature measurement. value. The heat flow of the completed deposition procedure can also be used as a reference value.
1‧‧‧製程室 1‧‧‧Processing Room
2‧‧‧基板 2‧‧‧Substrate
3‧‧‧基板架 3‧‧‧Shelf holder
4‧‧‧基板座 4‧‧‧ substrate holder
5‧‧‧加熱元件,加熱裝置 5‧‧‧Heating element, heating device
6‧‧‧基板座溫度 6‧‧‧ substrate holder temperature
6'‧‧‧基板溫度 6'‧‧‧ substrate temperature
7‧‧‧製程室頂部 7‧‧‧Processing room top
8‧‧‧間隙 8‧‧‧ gap
9‧‧‧排氣板 9‧‧‧Exhaust plate
9'‧‧‧冷卻元件 9'‧‧‧ Cooling components
10‧‧‧熱功率 10‧‧‧heat power
11‧‧‧加熱裝置控制器 11‧‧‧Heating device controller
12‧‧‧溫度量測值 12‧‧‧ Temperature measurement
13‧‧‧冷卻通道 13‧‧‧Cooling channel
14‧‧‧進口 14‧‧‧Import
15‧‧‧出口 15‧‧‧Export
16‧‧‧溫度計 16‧‧‧ thermometer
17‧‧‧凹槽 17‧‧‧ Groove
18‧‧‧氣墊 18‧‧‧ air cushion
19‧‧‧蓋板 19‧‧‧ Cover
20‧‧‧熱流量測裝置 20‧‧‧Thermal flow measuring device
21‧‧‧氣體流量控制器 21‧‧‧ gas flow controller
22‧‧‧氮氣流入量 22‧‧‧ nitrogen influx
23‧‧‧氫氣流入量 23‧‧‧ Hydrogen influx
24‧‧‧排氣口 24‧‧‧Exhaust port
25‧‧‧修正量 25‧‧‧Amendments
26‧‧‧廢熱流 26‧‧‧ Waste heat flow
27‧‧‧節流閥 27‧‧‧ throttle valve
28‧‧‧額定值設定裝置 28‧‧‧Rating setting device
29‧‧‧額定值 29‧‧‧ Rating
Rt1‧‧‧熱流阻 Rt1‧‧‧heat flow resistance
Rt2‧‧‧熱流阻 Rt2‧‧‧heat flow resistance
Rt3‧‧‧熱流阻 Rt3‧‧‧heat flow resistance
下面結合附圖對本發明之實施例進行說明。其中:圖1為第一實施例之處理裝置之製程室的橫截面示意圖,圖2為第一實施例之自加熱裝置5起至冷卻元件9為止之熱流路線的區塊圖,圖3為第二實施例之類似於圖1的示意圖,以及圖4為第二實施例之類似於圖2的示意圖。 Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 is a schematic cross-sectional view of a process chamber of the processing apparatus of the first embodiment, and FIG. 2 is a block diagram of a heat flow path from the heating device 5 to the cooling element 9 of the first embodiment, and FIG. 2 is a schematic view similar to FIG. 1, and FIG. 4 is a schematic view similar to FIG. 2 of the second embodiment.
圖1以實質上示意性的方式示出例如在DE 10 2006 013 801以及該案所引用之公開案中所述的CVD反應器之製程室之橫截面。該裝置用於將III-V族半導體層沉積在基板上。為此,將由兩個或兩個以上製程氣體構成之混合物與載氣一起饋送入形式為蓮蓬頭的氣體入口構件。該等製程氣體可為V主族之元素之氫化物以及III主族之元素之有機金屬化合物。例如可將三甲基鎵與氨一起饋送入製程室來製造GaN層,在該製程室中在III-V族基板中的一個上、但較佳在矽基板或藍寶石基板上沉積III-V族層。不僅在經加熱之基板2之表面上,亦在該蓮蓬頭之排氣板之面向製程室1的一側上發生製程氣體之分解反應。該排氣板構成製程室頂部7。排氣板9具有排氣口24,其係呈蓮蓬頭狀佈置。供冷卻劑穿過的冷卻通道13在排氣口24之間延伸。構成冷卻元件9的氣體入口構件、IR加熱裝置5、設於蓮蓬頭9與IR加熱裝置5之間的用於支承基板2的基板座位於CVD反應器之氣密封閉的反應器腔室中。 Figure 1 shows, in a substantially schematic manner, a cross section of a process chamber of a CVD reactor as described in DE 10 2006 013 801 and the publication cited in the patent. The device is for depositing a III-V semiconductor layer on a substrate. To this end, a mixture of two or more process gases is fed together with a carrier gas into a gas inlet member in the form of a showerhead. The process gases may be hydrides of the elements of the V main group and organometallic compounds of the elements of the III main group. For example, trimethylgallium can be fed into the process chamber together with ammonia to produce a GaN layer in which a III-V group is deposited on one of the III-V substrates, but preferably on a germanium or sapphire substrate. Floor. The decomposition reaction of the process gas occurs not only on the surface of the heated substrate 2 but also on the side of the exhaust plate of the shower head facing the process chamber 1. The venting plate constitutes the top 7 of the process chamber. The venting plate 9 has an exhaust port 24 which is arranged in a showerhead shape. A cooling passage 13 through which the coolant passes extends between the exhaust ports 24. The gas inlet member constituting the cooling element 9, the IR heating device 5, and the substrate holder for supporting the substrate 2 provided between the shower head 9 and the IR heating device 5 are located in a hermetically sealed reactor chamber of the CVD reactor.
元件符號6表示量測點,在該量測點上可對基板座4之表面溫度進行量測。藉由溫度量測裝置來進行該操作,其中該溫度量測裝置可為高溫計。該高溫計係在製程室外佈置在反應器殼體內,並且能夠以光學方式量測基板2之表面溫度以及提供輸送至加熱裝置控制器11的溫度量測值12,該加熱裝置控制器能夠將該溫度量測值用作控制變數,用以將熱功率10饋送入加熱元件5,從而將基板座4以及特別是基板2之表面加熱至製程溫度。此外可設有量測點6',用以確定基板2之表面溫度。例如可將在該處測得之溫度用於額定值調整。 The symbol 6 indicates a measurement point at which the surface temperature of the substrate holder 4 can be measured. This operation is performed by a temperature measuring device, which may be a pyrometer. The pyrometer is disposed within the reactor housing outside of the process chamber and is capable of optically measuring the surface temperature of the substrate 2 and providing a temperature measurement 12 that is delivered to the heating device controller 11, the heating device controller being capable of The temperature measurement is used as a control variable for feeding the thermal power 10 into the heating element 5, thereby heating the surface of the substrate holder 4 and in particular the substrate 2 to the process temperature. In addition, a measuring point 6' can be provided for determining the surface temperature of the substrate 2. For example, the temperature measured there can be used for rating adjustment.
透過進口14將冷卻液饋送入冷卻通道13,使其穿過冷卻通道並透過出口15離開冷卻通道13。藉由溫度計16能夠對離開冷卻通道13之冷卻液的溫度進行量測。測定冷卻液之排出溫度之量測值與冷卻液之進入溫度之間的溫差。 The coolant is fed into the cooling passage 13 through the inlet 14 through the cooling passage and out of the cooling passage 13 through the outlet 15. The temperature of the coolant leaving the cooling passage 13 can be measured by the thermometer 16. The temperature difference between the measured value of the discharge temperature of the coolant and the inlet temperature of the coolant is measured.
藉由熱流量測裝置20能夠測定透過冷卻水、透過出口15自冷卻元件9向外流出的熱流。為此可使用溫度計16所測得之溫度。廢熱流係用元件符號26表示。 The heat flow measuring device 20 can measure the heat flow that flows out of the cooling element 9 through the cooling water and through the outlet 15. The temperature measured by the thermometer 16 can be used for this purpose. The waste heat flow system is indicated by element symbol 26.
Rt1表示第一熱流阻,其受基板2之導熱能力以及基板2與基板座之間之熱阻影響。在其餘程序參數不變的情況下,此熱流阻Rt1在塗佈程序期間實質上保持不變。 Rt1 represents the first heat flow resistance, which is affected by the thermal conductivity of the substrate 2 and the thermal resistance between the substrate 2 and the substrate holder. This heat flow resistance Rt1 remains substantially unchanged during the coating process with the remaining program parameters unchanged.
Rt2表示第二熱流阻,其表示基板表面與製程室頂部7、即與冷卻元件9之底側之間之熱傳遞路線。透過第一熱流阻Rt1之熱流實質上透過導熱實現。透過第二熱流阻Rt2之熱流實質上透過熱輻射實現,並且取決於基板2以及製程室頂部7或冷卻元件9之面向製程室1的壁部的表面的發射率。出於多種原因,該發射率 在塗佈法之實施過程中發生變化。首先表面可能一度老化。但重要之處亦在於在表面上產生覆層,其對諸如發射率及反射率的光學特性造成影響。因此,即便在其餘實質上依據使用的配方設置的程序參數保持恆定的情況下,製程室之此等特性亦改變。 Rt2 denotes a second heat flow resistance which represents the heat transfer path between the substrate surface and the process chamber top 7, i.e., the bottom side of the cooling element 9. The heat flow through the first heat flow resistance Rt1 is substantially achieved by heat conduction. The heat flow through the second heat flow resistance Rt2 is substantially achieved by heat radiation and depends on the emissivity of the substrate 2 and the process chamber top 7 or the surface of the cooling element 9 facing the wall of the process chamber 1. The emissivity changes during the implementation of the coating process for a number of reasons. First the surface may age first. However, it is also important to create a coating on the surface that affects optical properties such as emissivity and reflectivity. Therefore, even if the remaining program parameters set substantially in accordance with the recipe used are kept constant, such characteristics of the process chamber are also changed.
由於第二熱流阻Rt2發生改變,基板表面之溫度可能改變。 Since the second heat flow resistance Rt2 changes, the temperature of the substrate surface may change.
在基板2對於使用的波長而言係透明的情況下(例如藍寶石基板對於400nm光而言係透明),特別是無法藉由高溫計量測基板2之表面溫度。在將GaN層沉積至藍寶石基板的過程中,當達到足夠的層厚時,方能可靠地量測基板2或層之表面溫度。因此,在此種層生長的開始階段,不僅透過溫度量測值12進行溫度控制,亦透過受熱流影響之控制變數25對額定值進行修正。此修正量反映廢熱流26之實際值與額定值之差。 In the case where the substrate 2 is transparent to the wavelength used (for example, the sapphire substrate is transparent to 400 nm light), in particular, the surface temperature of the substrate 2 cannot be measured by high temperature. In the process of depositing a GaN layer to a sapphire substrate, when a sufficient layer thickness is reached, the surface temperature of the substrate 2 or layer can be reliably measured. Therefore, at the beginning of the growth of such a layer, not only the temperature measurement is performed by the temperature measurement value 12, but also the control value of the heat flow is controlled to correct the rated value. This correction reflects the difference between the actual value of the waste heat stream 26 and the nominal value.
作為廢熱流之偏差的替代方案,亦可使用熱功率與期望之參考值的偏差來推導溫度修正。較佳在具有額定值設定裝置28的裝置中進行此操作,該額定值設定裝置用於改變針對加熱裝置控制器11的額定值29。藉由諸如高溫計的溫度量測裝置測定基板座溫度6、特別是基板座4之面向製程室之表面的溫度。此溫度構成針對控制熱功率10的加熱裝置控制器11的額定值。針對額定值29控制基板座4之表面溫度。藉由額定值設定裝置28設定額定值29。額定值設定裝置28自依據配方確定額定值的電子控制系統獲得額定值29。 As an alternative to the deviation of the waste heat flow, the deviation of the thermal power from the desired reference value can also be used to derive the temperature correction. This operation is preferably carried out in a device having a rating device 28 for varying the rating 29 for the heating device controller 11. The substrate holder temperature 6, in particular the temperature of the surface of the substrate holder 4 facing the process chamber, is determined by a temperature measuring device such as a pyrometer. This temperature constitutes the rating of the heating device controller 11 for controlling the thermal power 10. The surface temperature of the substrate holder 4 is controlled for the rated value 29. The rated value 29 is set by the rating setting means 28. The rating setting means 28 obtains a nominal value 29 from an electronic control system that determines the rating based on the recipe.
藉由熱流量測裝置20永久地量測廢熱流26。若此廢熱流在一定時間內偏離標準值一定程度,則額定值設定裝置28會 改變額定值29,其中,提高或降低基板溫度。如此便能對因製程室頂部7上之敷層而造成的效應進行響應。一般而言,亦可對熱功率,而非對廢熱進行觀測。 The waste heat stream 26 is permanently measured by the heat flow measuring device 20. If the waste heat flow deviates from the standard value by a certain amount within a certain period of time, the set value setting means 28 changes the rated value 29, wherein the substrate temperature is raised or lowered. This responds to the effects caused by the coating on the top 7 of the process chamber. In general, thermal power can be observed instead of waste heat.
但在能夠量測基板溫度6'的情況下,亦可將此基板溫度作為修正量25輸送至額定值設定裝置28。 However, when the substrate temperature 6' can be measured, the substrate temperature can be sent to the set value setting device 28 as the correction amount 25.
圖2示意性示出自加熱元件10起穿過兩個熱流阻Rt1及Rt2至冷卻元件9為止的熱流路線。藉由熱流量測裝置20量測廢熱流26,並將其與額定值進行比較。由此獲得用於控制加熱裝置控制器11的控制變數25,該加熱裝置控制器之操縱變數為熱功率10。 Fig. 2 schematically shows the heat flow path from the heating element 10 through the two heat flow resistors Rt1 and Rt2 to the cooling element 9. The waste heat flow 26 is measured by the thermal flow measuring device 20 and compared to the nominal value. A control variable 25 for controlling the heating device controller 11 is thus obtained, the control variable of which is the thermal power 10.
圖3以橫截面圖示意性示出CVD反應器之對本發明之描述而言的重要元件,此CVD反應器例如如DE 10 2009 003 624 A1或DE 10 2006 018 514 A1所述那般建構。 FIG. 3 shows, in a cross-sectional view, an important element of a CVD reactor for the description of the invention, which is constructed as described for example in DE 10 2009 003 624 A1 or DE 10 2006 018 514 A1.
製程氣體透過圖中未繪示之氣體入口構件流入製程室1,該等製程氣體亦可為V主族之氫化物以及III主族之有機金屬化合物。製程氣體與載氣一起流入。該等製程氣體在製程室1中、且特別是在設於製程室1中之基板2的表面上反應生成III-V族層。如就第一實施例所述那般,載氣與氣態反應產物透過氣體出口離開製程室1,該氣體出口連接在真空泵上,故能在製程室1內設置低壓。 The process gas flows into the process chamber 1 through a gas inlet member (not shown), and the process gases may also be a hydride of the V main group and an organometallic compound of the III main group. The process gas flows in with the carrier gas. The process gases are reacted in the process chamber 1 and, in particular, on the surface of the substrate 2 disposed in the process chamber 1 to form a III-V layer. As described in the first embodiment, the carrier gas and the gaseous reaction product exit the process chamber 1 through the gas outlet, and the gas outlet is connected to the vacuum pump, so that a low pressure can be set in the process chamber 1.
就溫度透過量測元件、例如熱電偶6或光纜以光學方式測得的基板座4而言,藉由加熱裝置5自下方對該基板座進行加熱。加熱裝置5可為RF加熱裝置,其在基板座4中產生渦流,從而對基板座4進行感應加熱。將量測元件6所獲得之溫度量測值12 輸送至加熱裝置控制器11,其提供加熱元件5工作時採用的充當操縱變數的熱功率10。 The substrate holder 4 is optically measured by a temperature transmitting measuring element such as a thermocouple 6 or a fiber optic cable, and the substrate holder is heated from below by a heating device 5. The heating device 5 may be an RF heating device that generates eddy currents in the substrate holder 4 to inductively heat the substrate holder 4. The temperature measurement 12 obtained by the measuring element 6 is supplied to a heating device controller 11, which provides the thermal power 10 acting as a steering variable employed when the heating element 5 is in operation.
在基板座4上貼靠有基板架3。基板架3位於氣墊18上的凹槽17中。流入氣墊18的氣體能夠使基板架3圍繞一軸線旋轉。在基板架3上設有一或數個基板2。 The substrate holder 3 is placed on the substrate holder 4. The substrate holder 3 is located in the recess 17 on the air cushion 18. The gas flowing into the air cushion 18 can rotate the substrate holder 3 about an axis. One or several substrates 2 are provided on the substrate holder 3.
在程序參數相同的情況下,第一熱流阻Rt1在塗佈程序中實質上近乎不變化或僅略微變化。但若程序參數改變,則熱流阻Rt1亦可能改變。若被饋送入構成氣墊18之氣隙的氣體在其熱傳遞特性方面發生改變,則Rt1亦改變。在配方中相繼的塗佈步驟分別以不同的程序參數實施,因為將包含不同層的層序列相繼沉積。但在相同的配方中處於相同位置的程序步驟具有相同的程序參數。 In the case where the program parameters are the same, the first heat flow resistance Rt1 is substantially nearly unchanged or only slightly changed in the coating process. However, if the program parameters are changed, the heat flow resistance Rt1 may also change. If the gas fed into the air gap constituting the air cushion 18 changes in its heat transfer characteristics, Rt1 also changes. The successive coating steps in the formulation are each carried out with different program parameters, since the layer sequences comprising the different layers are successively deposited. However, program steps that are in the same position in the same recipe have the same program parameters.
透過基板2在底側界定製程室1,並且透過例如由石墨構成之製程室頂部7在頂側界定製程室。製程室頂部7因基板架3及基板2所發射之輻射熱而被加熱。基板表面與製程室頂部7之間的路線構成第二熱流阻Rt2,其受基板2、基板架3以及製程室頂部7之表面之光學特性影響。一方面由於自然老化,另一方面由於塗佈程序中之塗佈,此等表面之發射率、反射率以及吸收能力隨時間變化。 The process chamber 1 is customized through the substrate 2 at the bottom side, and the process chamber is customized at the top side by, for example, the process chamber top 7 made of graphite. The top 7 of the process chamber is heated by the radiant heat emitted by the substrate holder 3 and the substrate 2. The route between the surface of the substrate and the top 7 of the process chamber constitutes a second heat flow resistance Rt2 which is affected by the optical properties of the surface of the substrate 2, the substrate holder 3 and the top 7 of the process chamber. On the one hand, due to natural aging, and on the other hand due to the coating in the coating procedure, the emissivity, reflectivity and absorption capacity of these surfaces vary with time.
在製程室頂部7與冷卻元件9所構成之壁部之底側之間構成間隙8,其被沖洗氣體沖洗,該沖洗氣體由兩個具有相互不同之導熱能力或熱容的氣體的混合物構成。 Between the top 7 of the process chamber and the bottom side of the wall formed by the cooling element 9, a gap 8 is formed which is flushed by a flushing gas which is composed of a mixture of two gases having mutually different thermal conductivity or heat capacity.
冷卻元件9具有冷卻通道13,進口14將冷卻劑饋送入該等冷卻通道。在冷卻通道13中經加熱之冷卻劑透過出口15離 開冷卻通道13。藉由溫度計16量測排出溫度。 The cooling element 9 has a cooling passage 13 into which the inlet 14 feeds the coolant. The heated coolant in the cooling passage 13 exits the cooling passage 13 through the outlet 15. The discharge temperature is measured by a thermometer 16.
藉由在圖3中象徵性示出的熱流量測裝置20量測廢熱流26。可自冷卻劑之熱容、質量流量以及進入溫度與排出溫度之間的溫差獲得此廢熱流。 The waste heat flow 26 is measured by a thermal flow measuring device 20 symbolically shown in FIG. This waste heat flow can be obtained from the heat capacity of the coolant, the mass flow rate, and the temperature difference between the inlet and outlet temperatures.
設有氣體流量控制器21,其用於對進入間隙8之兩個不同氣體的氣體流量進行控制。特別是設有用於對進入間隙8之氮氣流入量22以及氫氣流入量23進行控制的氣體流量控制器21。透過調整氫氣與氮氣之間的混合比能夠影響間隙8內之導熱能力,進而影響第三熱流阻Rt3的大小。透過改變熱流阻Rt3能夠對變化的熱流阻Rt2進行補償。熱流阻Rt3的改變與影響間隙8之熱特性的構件公差無關。透過改變氣體組成能夠對不同的間隙高度、但亦能對界定間隙之表面的不同發射率進行補償。 A gas flow controller 21 is provided for controlling the flow of gas into the two different gases entering the gap 8. In particular, a gas flow controller 21 for controlling the nitrogen inflow amount 22 and the hydrogen inflow amount 23 entering the gap 8 is provided. By adjusting the mixing ratio between hydrogen and nitrogen, the thermal conductivity in the gap 8 can be affected, thereby affecting the magnitude of the third heat flow resistance Rt3. The varying heat flow resistance Rt2 can be compensated by changing the heat flow resistance Rt3. The change in the thermal flow resistance Rt3 is independent of the component tolerances that affect the thermal characteristics of the gap 8. By varying the gas composition, it is possible to compensate for different gap heights, but also for different emissivity of the surface defining the gap.
在如圖3所示之實施例中,一方面透過氣隙18以及基板架3、基板2及基板座4之導熱能力確定第一熱流阻Rt1。另一方面,在與基板2相鄰之區域內,透過基板座4以及貼靠在基板座4上之蓋板19確定熱流阻。 In the embodiment shown in FIG. 3, the first heat flow resistance Rt1 is determined by the thermal conductivity of the air gap 18 and the substrate holder 3, the substrate 2, and the substrate holder 4. On the other hand, in the region adjacent to the substrate 2, the heat flow resistance is determined by the substrate holder 4 and the cover 19 abutting against the substrate holder 4.
圖4示意性示出對自加熱元件5起至冷卻元件9為止之熱流造成影響的熱流阻Rt1、Rt2以及Rt3,其中,熱流阻Rt3係可控制之熱流阻。其自控制迴路獲得操縱變數,該控制迴路之控制變數為排出熱26。藉由控制器21將後者保持在一恆定值。 Fig. 4 schematically shows heat flow resistances Rt1, Rt2 and Rt3 which affect the heat flow from the heating element 5 to the cooling element 9, wherein the heat flow resistance Rt3 is a controllable heat flow resistance. The control variable is obtained from the control loop, and the control variable of the control loop is the exhaust heat 26. The latter is maintained at a constant value by the controller 21.
圖2及圖4中之等效電路圖大幅簡化地反映實際物理條件。加熱裝置5所產生之熱流僅部分穿過基板座4及基板架3以及穿過基板2。但在觀測中可將熱功率10所產生之熱流的此部分視作恆定,因此,熱功率10之實質上恆定的比例被作為輻射熱自基 板架3之表面以及基板2之表面輻射入製程室1。 The equivalent circuit diagrams in Figures 2 and 4 greatly simplify the actual physical conditions. The heat flow generated by the heating device 5 passes only partially through the substrate holder 4 and the substrate holder 3 and through the substrate 2. However, this portion of the heat flow generated by the thermal power 10 can be regarded as constant during the observation, and therefore, a substantially constant ratio of the thermal power 10 is radiated as radiant heat from the surface of the substrate holder 3 and the surface of the substrate 2 into the process chamber 1 .
出於物理原因,此等由基板2及基板架3所輻射之熱量亦僅部分到達製程室頂部7。出於物理原因,到達製程室頂部7之熱量亦僅部分穿過間隙8到達冷卻元件9。 For physical reasons, the heat radiated by the substrate 2 and the substrate holder 3 also reaches only the top portion 7 of the process chamber. For physical reasons, the heat reaching the top 7 of the process chamber also only partially passes through the gap 8 to the cooling element 9.
較佳地,藉由本發明之裝置以及本發明之方法將基板2之溫度以及特別是基板2之表面溫度控制在一實質上恆定的值,而毋需明確量測該溫度。根據本發明,藉由控制器對CVD反應器之熱力學相關特性進行控制,從而將熱流、特別是廢熱流26保持在一恆定值。作為示例,該等實施例示出加熱元件5之熱功率之影響,以及加熱元件5與冷卻元件9之間之熱傳遞路線中的附加熱流阻Rt3的影響。 Preferably, the temperature of the substrate 2, and particularly the surface temperature of the substrate 2, is controlled to a substantially constant value by the apparatus of the present invention and the method of the present invention without the need to explicitly measure the temperature. According to the invention, the thermodynamically relevant properties of the CVD reactor are controlled by the controller to maintain the heat flow, particularly the waste heat stream 26, at a constant value. By way of example, the embodiments show the effect of the thermal power of the heating element 5 and the effect of the additional heat flow resistance Rt3 in the heat transfer path between the heating element 5 and the cooling element 9.
控制器11、18、21可為獨立的電子設備。但此等控制器11、18、21亦可由一電子型、特別是經程式控制之控制裝置構成。控制器11、18、21可為PID控制器。在如圖1及圖2所示之實施例中,亦可選擇藉由溫度量測感測器6來進行溫度控制,前提是此溫度量測感測器能夠在製程技術方面足夠準確地測定基板2之表面溫度。在無法足夠準確地測定基板2之表面溫度的情況下,則透過熱流進行溫度控制。 The controllers 11, 18, 21 can be separate electronic devices. However, the controllers 11, 18, 21 can also be constructed of an electronic, in particular programmed, control device. The controllers 11, 18, 21 can be PID controllers. In the embodiment shown in FIG. 1 and FIG. 2, the temperature measurement sensor 6 can also be selected for temperature control, provided that the temperature measurement sensor can accurately determine the substrate in terms of process technology. 2 surface temperature. In the case where the surface temperature of the substrate 2 cannot be measured accurately enough, the temperature control is performed by the heat flow.
前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中亦可將此等特徵組合中的兩個、數個或所有相互組合,亦即: The foregoing embodiments are used to illustrate the inventions contained in the entire application, and the inventions are independently constructed at least separately from the prior art by combining the following features, wherein two or more of the combinations of features may be combined. All combined with each other, namely:
一種方法,其特徵在於:透過熱流影響溫度控制。 A method characterized in that temperature control is affected by heat flow.
一種裝置,其特徵在於:透過熱流影響溫度控制。 A device characterized in that temperature control is affected by heat flow.
一種方法或一種裝置,其特徵在於:該溫度控制系統具有至少一個控制迴路,其中該熱流為控制變數,或者,變化的熱流導致溫度額定值修正。 A method or apparatus, characterized in that the temperature control system has at least one control loop, wherein the heat flow is a control variable, or the varying heat flow causes a temperature rating correction.
一種方法或一種裝置,其特徵在於:該熱流係透過熱流檢測構件20測定。 A method or apparatus characterized in that the heat flow is measured by a heat flow detecting member 20.
一種方法或一種裝置,其特徵在於:在溫度額定值修正中或在溫度控制中使用的熱流係廢熱流26或熱功率10。 A method or apparatus characterized in that the heat flow used in the temperature rating correction or in the temperature control is a waste heat stream 26 or a thermal power 10.
一種方法或一種裝置,其特徵在於:冷卻元件9具有供冷卻劑穿過的冷卻通道13,該冷卻劑透過質量流量將廢熱向外導出,其中,為了測定廢熱流26,測定該冷卻劑之溫差及其穿過冷卻通道13的質量流量。 A method or a device, characterized in that the cooling element 9 has a cooling passage 13 through which the coolant passes, the coolant passing the waste heat outward through the mass flow, wherein the temperature difference of the coolant is determined for determining the waste heat flow 26. And its mass flow through the cooling passage 13.
一種方法或一種裝置,其特徵在於:為了控制該熱流,改變加熱元件5之熱功率10。 A method or apparatus characterized in that the thermal power 10 of the heating element 5 is varied in order to control the heat flow.
一種方法或一種裝置,其特徵在於:為了控制該熱流,將可變的熱流阻Rt3改變。 A method or apparatus characterized by varying a variable heat flow resistance Rt3 in order to control the heat flow.
一種方法或一種裝置,其特徵在於:為了控制該熱流,將導熱能力不同之氣體的混合物饋送入位於製程室頂部7與冷卻元件9之間的間隙8,其中,改變該混合比。 A method or a device, characterized in that, in order to control the heat flow, a mixture of gases of different thermal conductivity is fed into a gap 8 between the top 7 of the process chamber and the cooling element 9, wherein the mixing ratio is varied.
一種方法或一種裝置,其特徵在於:用於控制熱功率10的加熱裝置控制器11之額定值29為在基板座4上或基板2上測得之表面溫度,在熱流變化的情況下,藉由額定值設定裝置28改變該額定值29。 A method or a device, characterized in that the rating 29 of the heating device controller 11 for controlling the thermal power 10 is the surface temperature measured on the substrate holder 4 or on the substrate 2, in the case of a change in heat flow, The set value 29 is changed by the set value setting means 28.
一種方法或一種裝置,其特徵在於:在該熱流之與設定的標準值的偏差的透過時間確定的積分的變化程度達到設定量 的情況下,改變額定值29。 A method or apparatus characterized in that the rated value 29 is changed in a case where the degree of change in the integral determined by the transmission time of the deviation of the heat flow from the set standard value reaches the set amount.
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。此外,在每個請求項中給出之發明可具有在前文中特別是用元件符號表示及/或在符號說明中給出之特徵中的一或多個。本發明亦有關於實施方式,其中未實現前述特徵中的個別特徵,特別是在此等特徵對於具體用途而言顯然多餘或可被技術上等效之手段替代的情況下。 All of the disclosed features (as a single feature or combination of features) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the files are also included in the scope of the patent application of the present application. The subsidiary item is characterized by its characteristics for the features of the prior art improvement of the prior art, and its purpose is mainly to carry out a divisional application on the basis of the claims. Furthermore, the inventions given in each of the claims may have one or more of the features set forth in the foregoing, particularly in the form of the element symbol and/or in the description of the symbol. The invention also relates to embodiments in which individual features of the aforementioned features are not implemented, particularly where such features are obviously redundant or can be replaced by technically equivalent means for a particular use.
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