TW201842596A - Semiconductor device production method and adhesive sheet - Google Patents

Semiconductor device production method and adhesive sheet Download PDF

Info

Publication number
TW201842596A
TW201842596A TW107111208A TW107111208A TW201842596A TW 201842596 A TW201842596 A TW 201842596A TW 107111208 A TW107111208 A TW 107111208A TW 107111208 A TW107111208 A TW 107111208A TW 201842596 A TW201842596 A TW 201842596A
Authority
TW
Taiwan
Prior art keywords
adhesive
adhesive layer
mass
semiconductor wafer
resin
Prior art date
Application number
TW107111208A
Other languages
Chinese (zh)
Other versions
TWI773747B (en
Inventor
阿久津高志
岡本直也
中山武人
Original Assignee
日商琳得科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商琳得科股份有限公司 filed Critical 日商琳得科股份有限公司
Publication of TW201842596A publication Critical patent/TW201842596A/en
Application granted granted Critical
Publication of TWI773747B publication Critical patent/TWI773747B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Laminated Bodies (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

Provided are: a semiconductor device production method that includes steps (1)-(4) indicated below and that is a method for producing a semiconductor device using an adhesive sheet comprising an adhesive layer and a non-adhesive substrate containing expandable particles; and an adhesive sheet used in the production method. Step (1) is a step in which a frame member having an opening formed therein is attached to the adhesive surface of the adhesive layer. Step (2) is a step in which a semiconductor chip is placed on a part of the adhesive surface of the adhesive layer that is exposed in the opening of the frame member. Step (3) is a step in which the semiconductor chip, the frame member, and the adhesive surface of the adhesive layer on the periphery of the semiconductor chip are covered with a sealing material, the sealing material is cured, and a cured sealing body in which the semiconductor chip is sealed by the cured sealing material is obtained. Step (4) is a step in which the expandable particles are made to expand and the adhesive sheet is peeled from the cured sealing body. The present invention makes it possible to minimize the occurrence of positional displacement of a semiconductor chip in a production process for a fan-out package, has excellent productivity, and yields a semiconductor device having excellent flatness in a rewiring layer formation surface thereof.

Description

半導體裝置之製造方法及黏著薄片Manufacturing method of semiconductor device and adhesive sheet

本發明係關於半導體裝置之製造方法及黏著薄片。The present invention relates to a method for manufacturing a semiconductor device and an adhesive sheet.

進幾年來,已進展電子機器之小型化、輕量化及高機能化,伴隨此,對於搭載於電子機器之半導體裝置,亦要求小型化、薄型化及高密度化。   半導體晶片有安裝於接近其尺寸之封裝中之情況。此等封裝亦稱為CSP(Chip Scale Package,晶片規格封裝)。作為CSP舉例有以晶圓尺寸處理至封裝最終步驟而完成之WLP(Wafer Level Package,晶圓等級封裝),以比晶圓尺寸大之面板尺寸處理至封裝最終步驟而完成之PLP(Panel Level Package,面板等級封裝)等。In recent years, miniaturization, weight reduction, and high performance of electronic devices have progressed. With this, semiconductor devices mounted on electronic devices have also been required to be miniaturized, thinned, and high-density. Semiconductor wafers are sometimes mounted in packages close to their size. These packages are also called CSP (Chip Scale Package). Examples of CSPs are WLP (Wafer Level Package) completed from wafer size processing to the final step of packaging, and PLP (Panel Level Package) completed from processing to the final step of packaging with a panel size larger than the wafer size , Panel-level package) and so on.

WLP及PLP分類為扇入(Fan-In)型與扇出(Fan-out)型。扇出型之WLP(以下亦稱為「FOWLP」)及PLP(以下亦稱為「FOPLP」)中,半導體晶片以成為比晶片尺寸大之區域之方式由密封材覆蓋形成半導體晶片之密封體,不僅於半導體晶片之電路面形成再配線層及外部電極,亦形成於密封材之表面區域。WLP and PLP are classified into Fan-In type and Fan-out type. In the fan-out type WLP (hereinafter also referred to as "FOWLP") and PLP (hereinafter also referred to as "FOPLP"), the semiconductor wafer is covered with a sealing material to form a sealed body of the semiconductor wafer so that the area is larger than the wafer size. The redistribution layer and external electrodes are formed not only on the circuit surface of the semiconductor wafer, but also on the surface area of the sealing material.

不過,FOWLP及FOPLP係經過以下步驟而製造,例如將複數半導體晶片載置於暫時固定用之黏著薄片(以下亦稱為「暫時固定用薄片」)上之載置步驟,以賦予流動性之密封材被覆之被覆步驟,使該密封材熱硬化之硬化步驟,自前述密封體剝離暫時固定用薄片之剝離步驟,於露出之半導體晶片側之表面形成再配線層之再配線層形成步驟。   對於上述步驟中使用之暫時固定用薄片,要求於前述被覆步驟及硬化步驟(以下亦將該等稱為「密封步驟」)之間,不發生半導體晶片之位置偏移,且密封材不進入至半導體晶片與暫時固定用薄片之接著界面之程度的接著性,且要求於密封步驟後,可無殘糊地容易去除之剝離性。亦即,於FOWLP及FOPLP之製造中使用之暫時固定用薄片被要求兼具使用時之接著性與使用後之剝離性。However, FOWLP and FOPLP are manufactured through the following steps, for example, placing a plurality of semiconductor wafers on a temporary fixing adhesive sheet (hereinafter also referred to as a "temporary fixing sheet") to provide a fluidity seal A coating step of coating a material, a hardening step of thermally hardening the sealing material, a peeling step of peeling the temporarily fixing sheet from the sealing body, and a redistribution layer forming step of forming a redistribution layer on the exposed surface of the semiconductor wafer side. For the temporary fixing sheet used in the above steps, it is required that the position of the semiconductor wafer does not shift between the coating step and the hardening step (hereinafter also referred to as "sealing step"), and the sealing material does not enter The degree of adhesiveness between the bonding interface of the semiconductor wafer and the temporary fixing sheet is required, and after the sealing step, peelability that can be easily removed without residue is required. That is, the temporary fixing sheet used in the production of FOWLP and FOPLP is required to have both the adhesiveness at the time of use and the release property after use.

例如,專利文獻1中,揭示於FOWLP之製造方法中,以具有由聚醯亞胺膜所成之基材與該基材表面所具備之由矽系黏著劑所成之黏著層之暫時固定用薄片上進行密封步驟後,以手邊使該暫時固定用薄片彎曲邊剝離之方法。然而,以手等剝離暫時固定用薄片之步驟繁瑣,基於提高生產性之觀點,要求以更小外力即可剝離暫時固定用薄片。For example, Patent Document 1 discloses that in the manufacturing method of FOWLP, a substrate having a polyimide film and an adhesive layer made of a silicon-based adhesive on the surface of the substrate is used for temporary fixing. After the sealing step is performed on the sheet, the sheet for temporary fixing is peeled while being bent by hand. However, the step of peeling the sheet for temporary fixing by hand or the like is complicated, and from the viewpoint of improving productivity, it is required to peel the sheet for temporary fixing with a smaller external force.

作為剝離性優異之暫時固定用薄片,例如於專利文獻2中,揭示於基材之至少一面上設置含有熱膨脹性微小球之熱膨脹性黏著層之電子零件切斷時之暫時固定用加熱剝離型黏著薄片。FOWLP及FOPLP之製造中,亦考慮使用專利文獻2中記載之加熱剝離型黏著薄片。 [先前技術文獻] [專利文獻]As a sheet for temporary fixation having excellent peelability, for example, Patent Document 2 discloses a heat-peeling type adhesive for temporary fixation at the time of cutting an electronic component provided with a thermally expandable adhesive layer containing thermally expandable microspheres on at least one side of a substrate. Flakes. In the production of FOWLP and FOPLP, it is also considered to use the heat-peelable adhesive sheet described in Patent Document 2. [Prior Art Literature] [Patent Literature]

[專利文獻1] 日本特開2015-32646號公報   [專利文獻2] 日本專利第3594853號公報[Patent Document 1] Japanese Patent Laid-Open No. 2015-32646 [Patent Document 2] Japanese Patent No. 3985853

[發明欲解決之課題][Questions to be Solved by the Invention]

然而,依據本發明人等之檢討,了解到使用專利文獻2中記載之加熱剝離型黏著薄片作為FOWLP及FOPLP之製造中之暫時固定用薄片時,起因於熱膨脹性黏著層之彈性率低,而於前述載置步驟及密封步驟中,所載置之半導體晶片會沉入於黏著薄片側,而發生半導體晶片之位置偏移。藉此,密封步驟後,於去除黏著薄片後之半導體晶片側之表面(以下亦稱為「再配線層形成面」),於半導體晶片表面與密封材表面之間會發生階差,故平坦性差,而成為半導體晶片之位置精度降低之結果。由於此等再配線層形成面之平坦性之降低及半導體晶片之位置精度之降低與再配線精度之降低相關,故而期望被抑制。   且,去除黏著薄片時,即使加熱使熱膨脹性黏著層膨脹,亦因半導體晶片沉入黏著薄片側,故認為若無某程度大小之外力將難以剝離。However, based on a review by the inventors, it is understood that when the heat-peelable adhesive sheet described in Patent Document 2 is used as a temporary fixing sheet in the production of FOWLP and FOPLP, the elastic modulus of the thermally expandable adhesive layer is low, and In the aforementioned mounting step and sealing step, the mounted semiconductor wafer is sunk on the side of the adhesive sheet, and the position of the semiconductor wafer is shifted. As a result, after the sealing step, the surface on the semiconductor wafer side (hereinafter also referred to as the "rewiring layer forming surface") after the adhesive sheet is removed, a step occurs between the surface of the semiconductor wafer and the surface of the sealing material, so the flatness is poor , And the result that the position accuracy of the semiconductor wafer is reduced. Since the reduction in the flatness of the rewiring layer formation surface and the reduction in the positional accuracy of the semiconductor wafer are related to the reduction in the rewiring accuracy, it is desired to be suppressed. In addition, when the adhesive sheet is removed, even if the thermally expandable adhesive layer expands by heating, the semiconductor wafer sinks into the adhesive sheet side, and it is considered that it is difficult to peel off without a certain amount of external force.

本發明係鑒於上述問題點而完成者,目的在於提供可抑制扇出型封裝之製造步驟中的半導體晶片之位置偏移發生,生產性優異,所得半導體裝置之再配線層形成面之平坦性優異之半導體裝置之製造方法及該製造方法所用之黏著薄片。 [用以解決課題之手段]The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a method for suppressing the occurrence of a positional shift of a semiconductor wafer in a manufacturing step of a fan-out package, which is excellent in productivity and excellent in flatness of a rewiring layer forming surface of the obtained semiconductor device A semiconductor device manufacturing method and an adhesive sheet used in the manufacturing method. [Means to solve the problem]

本發明人等發現於扇出型封裝之製造步驟中,藉由使用具有包含膨脹性粒子且包含非黏著性之基材的特定層構成之黏著薄片,可解決上述課題。   亦即,本發明係提供下述[1]~[11]者。   [1] 一種半導體裝置之製造方法,其係使用黏著薄片來製造半導體裝置之方法,該黏著薄片具有:黏著劑層、與包含膨脹性粒子且為非黏著性的基材,   具有下述步驟(1)~(4),   步驟(1):將形成有開口部的框構件貼合於黏著劑層的黏著表面之步驟;   步驟(2):將半導體晶片載置於在前述框構件的前述開口部露出的前述黏著劑層的黏著表面的一部分之步驟;   步驟(3):以密封材來被覆前述半導體晶片、前述框構件、與前述黏著劑層的黏著表面中的前述半導體晶片的周邊部,使該密封材硬化,得到前述半導體晶片被硬化密封材所密封而成的硬化密封體之步驟;   步驟(4):使前述膨脹性粒子膨脹,將前述黏著薄片從前述硬化密封體上剝離之步驟。   [2] 如上述[1]記載之半導體裝置之製造方法,其中,進一步具有下述步驟(5),   步驟(5):對前述黏著薄片為經剝離的硬化密封體形成再配線層之步驟。   [3] 如上述[1]或[2]記載之半導體裝置之製造方法,其中,前述膨脹性粒子為熱膨脹性粒子,前述步驟(4)係藉由將前述黏著薄片進行加熱,使前述熱膨脹性粒子膨脹來將前述黏著薄片從前述硬化密封體上剝離之步驟。   [4] 如上述[3]記載之半導體裝置之製造方法,其中,前述熱膨脹性粒子的膨脹開始溫度(t)為120~250℃。   [5] 如上述[4]記載之半導體裝置之製造方法,其中,前述基材滿足下述要件(1)~(2),   要件(1):在100℃下的前述基材的儲存模數E’(100)為2.0×105 Pa以上;   要件(2):在前述熱膨脹性粒子的膨脹開始溫度(t)下的前述基材的儲存模數E’(t)為1.0×107 Pa以下。   [6] 如上述[1]~[5]中任一項記載之黏著薄片,其中,前述膨脹性粒子在23℃下的膨脹前的平均粒徑為3~100μm。   [7] 如上述[1]~[6]中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述黏著材層的剪切儲存模數G’(23)為1.0×104 ~1.0×108 Pa。   [8] 如上述[1]~[7]中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述基材的厚度、與前述黏著劑層的厚度之比(基材/黏著劑層)為0.2以上。   [9] 如上述[1]~[8]中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述基材的厚度為10~1000 μm,前述黏著劑層的厚度為1~60μm。   [10] 如上述[1]~[9]中任一項記載之半導體裝置之製造方法,其中,前述基材的表面的探針黏性值為未滿50mN/5mmφ。   [11] 一種黏著薄片,其係於上述[1]~[10]中任一項記載之半導體裝置之製造方法中所使用的黏著薄片,依序具有:黏著劑層、與包含膨脹性粒子且為非黏著性的基材。 [發明效果]The inventors have found that in the manufacturing steps of a fan-out package, the above-mentioned problems can be solved by using an adhesive sheet having a specific layer including a swellable particle and a non-adhesive base material. That is, the present invention provides the following [1] to [11]. [1] A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using an adhesive sheet having an adhesive layer and a non-adhesive base material containing expandable particles, and having the following steps ( 1) to (4), step (1): a step of attaching a frame member having an opening portion to an adhesive surface of an adhesive layer; step (2): placing a semiconductor wafer in the opening of the frame member A step of partially exposing a part of the adhesive surface of the adhesive layer; step (3): covering a peripheral portion of the semiconductor wafer among the adhesive surface of the semiconductor wafer, the frame member, and the adhesive layer with a sealing material, A step of hardening the sealing material to obtain a hardened sealed body in which the semiconductor wafer is sealed by the hardened sealing material; step (4): a step of expanding the expandable particles and peeling the adhesive sheet from the hardened sealing body . [2] The method for manufacturing a semiconductor device according to the above [1], further comprising the following step (5), step (5): a step of forming a redistribution layer on the adhesive sheet as a peeled hardened sealing body. [3] The method for manufacturing a semiconductor device according to the above [1] or [2], wherein the expandable particles are thermally expandable particles, and the step (4) is performed by heating the adhesive sheet to make the thermal expansion properties The step of expanding the particles to peel the adhesive sheet from the hardened sealing body. [4] The method for manufacturing a semiconductor device according to the above [3], wherein the expansion start temperature (t) of the thermally expandable particles is 120 to 250 ° C. [5] The method for manufacturing a semiconductor device according to the above [4], wherein the substrate satisfies the following requirements (1) to (2), and requirement (1): a storage modulus of the substrate at 100 ° C E '(100) is 2.0 × 10 5 Pa or more; Element (2): The storage modulus E ′ (t) of the substrate at the expansion start temperature (t) of the thermally expandable particles is 1.0 × 10 7 Pa the following. [6] The adhesive sheet according to any one of the above [1] to [5], wherein the average particle diameter of the expandable particles before expansion at 23 ° C. is 3 to 100 μm. [7] The method for manufacturing a semiconductor device according to any one of the above [1] to [6], wherein the shear storage modulus G ′ (23) of the adhesive material layer at 23 ° C. is 1.0 × 10 4 to 1.0 × 10 8 Pa. [8] The method for manufacturing a semiconductor device according to any one of the above [1] to [7], wherein the ratio of the thickness of the substrate at 23 ° C. to the thickness of the adhesive layer (substrate / The adhesive layer) is 0.2 or more. [9] The method for manufacturing a semiconductor device according to any one of the above [1] to [8], wherein the thickness of the substrate at 23 ° C. is 10 to 1000 μm, and the thickness of the adhesive layer is 1 ~ 60 μm. [10] The method for manufacturing a semiconductor device according to any one of the above [1] to [9], wherein a probe viscosity value on a surface of the substrate is less than 50 mN / 5 mmφ. [11] An adhesive sheet, which is an adhesive sheet used in the method for manufacturing a semiconductor device according to any one of the above [1] to [10], and has an adhesive layer, and an expandable particle and Non-adhesive substrate. [Inventive effect]

依據本發明,可提供可抑制扇出型封裝之製造步驟中的半導體晶片之位置偏移發生,生產性優異,所得半導體裝置之再配線層形成面之平坦性優異之半導體裝置之製造方法及該製造方法所用之黏著薄片。According to the present invention, it is possible to provide a method for manufacturing a semiconductor device capable of suppressing the occurrence of a positional shift of a semiconductor wafer in a manufacturing step of a fan-out package, and having excellent productivity, and an excellent flatness of the rewiring layer formation surface of the obtained semiconductor device, and the method Adhesive sheet used in the manufacturing method.

本發明中,所謂「有效成分」係指成為對象的組成物中所含之成分中,稀釋溶劑除外之成分。   又,質量平均分子量(Mw)係以凝膠滲透層析(GPC)法測定之標準聚苯乙烯換算之值,具體而言係基於實施例中記載之方法測定之值。In the present invention, the "active ingredient" means a component other than a diluent solvent among the components contained in the target composition. In addition, the mass average molecular weight (Mw) is a value converted into a standard polystyrene measured by a gel permeation chromatography (GPC) method, and specifically is a value measured based on a method described in Examples.

本發明中,例如「(甲基)丙烯酸」表示「丙烯酸」與「甲基丙烯酸」兩者,其他類似用語亦相同。   又,關於較佳之數值範圍(例如含量等之範圍),階段性記載之下限值及上限值可分別獨立組合。例如基於「較好為10~90,更好30~60」之記載,亦可組合「較佳之下限值(10)」與「更佳之上限值(60)」而成為「10~60」。In the present invention, for example, "(meth) acrylic acid" means both "acrylic acid" and "methacrylic acid", and other similar terms are also the same. In addition, regarding the preferred numerical range (such as the range of the content), the lower limit value and the upper limit value of the staged records can be combined independently. For example, based on the description of "preferably 10 to 90, more preferably 30 to 60", it is also possible to combine "better lower limit (10)" and "better upper limit (60)" to become "10 to 60" .

[半導體裝置之製造方法]   本實施形態之半導體裝置之製造方法係使用黏著薄片來製造半導體裝置之方法,該黏著薄片具有:黏著劑層、與包含膨脹性粒子且為非黏著性的基材,具有下述步驟(1)~(4),   步驟(1):將形成有開口部的框構件貼合於黏著劑層的黏著表面之步驟;   步驟(2):將半導體晶片載置於在前述框構件的前述開口部露出的前述黏著劑層的黏著表面的一部分之步驟;   步驟(3):以密封材來被覆前述半導體晶片、前述框構件、與前述黏著劑層的黏著表面中的前述半導體晶片的周邊部,使該密封材硬化,得到前述半導體晶片被硬化密封材所密封而成的硬化密封體之步驟;   步驟(4):使前述膨脹性粒子膨脹,將前述黏著薄片從前述硬化密封體上剝離之步驟。   以下,首先針對本實施形態之半導體裝置之製造方法所用之黏著薄片加以說明,隨後針對包含步驟(1)~(4)之各製造步驟加以說明。[Manufacturing method of semiconductor device] The manufacturing method of the semiconductor device of this embodiment is a method of manufacturing a semiconductor device using an adhesive sheet having an adhesive layer and a non-adhesive base material containing expandable particles, The method includes the following steps (1) to (4), (1): a step of bonding a frame member formed with an opening portion to an adhesive surface of an adhesive layer; (2): placing a semiconductor wafer on the aforementioned A step of a part of the adhesive surface of the adhesive layer exposed at the opening of the frame member; step (3): covering the semiconductor wafer, the frame member, and the semiconductor in the adhesive surface with the adhesive layer with a sealing material A step of hardening the sealing material at the peripheral portion of the wafer to obtain a hardened sealing body in which the semiconductor wafer is sealed by the hardened sealing material; step (4): expanding the expandable particles and sealing the adhesive sheet from the hardening; Step of body peeling. Hereinafter, first, the adhesive sheet used in the method for manufacturing a semiconductor device according to this embodiment will be described, and then each manufacturing step including steps (1) to (4) will be described.

<黏著薄片>   本實施形態之黏著薄片只要為具有黏著劑層、與包含膨脹性粒子且為非黏著性的基材(以下亦稱為「膨脹性基材」)者,則未特別限定。   黏著薄片之形狀可採取薄片狀、膠帶狀、標籤狀等之所有形狀。<Adhesive sheet> 之 The adhesive sheet of this embodiment is not particularly limited as long as it has an adhesive layer and a non-adhesive base material (hereinafter also referred to as "expandable base material") containing expandable particles. The shape of the adhesive sheet can take all shapes such as sheet, tape, and label.

(黏著薄片之構成)   圖1(A)係本實施形態之黏著薄片10之剖面圖。   如圖1(A)所示,本實施形態之黏著薄片10於基材11上具有黏著劑層12。   又,本實施形態之黏著薄片亦可如圖1(B)所示之黏著薄片10a,於黏著劑層12之黏著表面12a上進而具有剝離材13之構成。於將黏著薄片10a使用於本實施形態之半導體裝置之製造方法時,剝離材13係適當剝離去除。(Composition of Adhesive Sheet) Fig. 1 (A) is a cross-sectional view of an adhesive sheet 10 according to this embodiment. (1) As shown in FIG. 1 (A), the adhesive sheet 10 of this embodiment has an adhesive layer 12 on a substrate 11. In addition, the adhesive sheet of this embodiment may also have the constitution of the release material 13 on the adhesive surface 12a of the adhesive layer 12 as shown in the adhesive sheet 10a shown in FIG. 1 (B). When using the adhesive sheet 10a for the manufacturing method of the semiconductor device of this embodiment, the peeling material 13 is peeled and removed suitably.

以下,針對本實施形態之黏著薄片所具備之膨脹性基材、黏著劑層及根據需要使用之剝離材依序加以說明。Hereinafter, the expandable base material, the adhesive layer, and the release material used as needed in the adhesive sheet of this embodiment will be described in order.

(膨脹性基材)   膨脹性基材包含膨脹性粒子且為非黏著性之基材。   一般,如專利文獻2中記載之黏著薄片具有般之熱膨脹性黏著劑層除了以彈性模數低的黏著劑為主成分以外,由於充分含有膨脹性粒子,故必定為某程度之厚度。因此,可能產生於半導體晶片之載置步驟及密封步驟之間發生半導體晶片之位置偏移,半導體晶片沉入黏著薄片側,再配線層形成面無法平坦之缺點。   另一方面,本實施形態之黏著薄片由於膨脹性粒子係含於彈性模數高的非黏著性樹脂中,故可提高載置半導體晶片之黏著劑層之厚度調整、黏著力、黏彈性模數等之控制等之設計自由度。藉此可抑制半導體晶片之位置偏移發生,同時抑制半導體晶片沉入雙面黏著薄片中,可形成平坦性優異之再配線層形成面。   再者,使用本實施形態之黏著薄片時,由於半導體晶片係載置於黏著劑層之黏著表面,故膨脹性基材與再配線層形成面未直接接觸。藉此,抑制了源自膨脹性粒子之殘渣及大為變形之黏著劑層之一部分附著於再配線層形成面,抑制了形成於熱膨脹性黏著層的凹凸形狀轉印於再配線層形成面使平滑性降低,可獲得乾淨性及平滑性優異之再配線層形成面。(Expandable base material) (i) The expandable base material includes expandable particles and is a non-adhesive base material. Generally, the heat-expandable pressure-sensitive adhesive layer as described in Patent Document 2 has a thickness of a certain degree because the pressure-sensitive adhesive layer mainly contains a pressure-sensitive adhesive having a low modulus of elasticity as it contains sufficient expandable particles. Therefore, a positional deviation of the semiconductor wafer may occur between the mounting step and the sealing step of the semiconductor wafer, the semiconductor wafer sinks into the side of the adhesive sheet, and the formation surface of the rewiring layer cannot be flat. On the other hand, since the expandable particles of this embodiment form are contained in a non-adhesive resin having a high elastic modulus, the thickness adjustment, adhesive force, and viscoelastic modulus of the adhesive layer on which the semiconductor wafer is placed can be improved. Design freedom of control of waiting and so on. This can suppress the occurrence of positional deviation of the semiconductor wafer, and at the same time suppress the semiconductor wafer from sinking into the double-sided adhesive sheet, and can form a rewiring layer forming surface having excellent flatness. Furthermore, when using the adhesive sheet of this embodiment, since the semiconductor wafer is placed on the adhesive surface of the adhesive layer, the expandable substrate and the redistribution layer forming surface are not in direct contact. Thereby, it is suppressed that a part of the residue derived from the expandable particles and the greatly deformed adhesive layer adhere to the redistribution layer forming surface, and the uneven shape formed on the thermally expandable adhesive layer is prevented from being transferred to the redistribution layer forming surface. The smoothness is reduced, and a redistribution layer forming surface having excellent cleanness and smoothness can be obtained.

膨脹性基材之厚度較好為10~1000μm,更好為20~500μm,又更好為25~400μm,再更好為30~300 μm。   又,本說明書中,膨脹性基材之厚度意指藉由實施例記載之方法測定之值。The thickness of the expandable substrate is preferably 10 to 1000 μm, more preferably 20 to 500 μm, still more preferably 25 to 400 μm, and still more preferably 30 to 300 μm. In addition, in this specification, the thickness of an expandable substrate means the value measured by the method described in an Example.

黏著薄片所具有之膨脹性基材為非黏著性之基材。   本發明中,是否為非黏著性基材之判斷係對成為對象之基材表面,依據JIS Z0237:1991測定之探針黏性值若未滿50mN/5mmφ,則判斷為該基材為「非黏著性基材」。   本文中,本實施形態所用之膨脹性基材之表面的探針黏性值通常為未滿50mN/5mmφ,但較好為未滿30mN/5mmφ,更好為未滿10mN/5mmφ,又更好為未滿5mN/5mmφ。   又,本說明書中,膨脹性基材之表面的探針黏性值之具體測定方法係利用實施例所記載之方法。The expandable substrate of the adhesive sheet is a non-adhesive substrate. In the present invention, the determination of whether the substrate is non-adhesive refers to the surface of the target substrate. If the probe viscosity value measured according to JIS Z0237: 1991 is less than 50mN / 5mmφ, the substrate is judged to be "non-adhesive" Adhesive substrate ". Herein, the probe viscosity of the surface of the expansive substrate used in this embodiment is generally less than 50mN / 5mmφ, but preferably less than 30mN / 5mmφ, more preferably less than 10mN / 5mmφ, and even better. It is less than 5mN / 5mmφ. In addition, in this specification, the specific measurement method of the probe viscosity value on the surface of an expandable substrate is the method described in an Example.

本實施形態之黏著薄片具有之膨脹性基材係包含樹脂及膨脹性粒子者,但在不損及本發明效果之範圍內,可根據需要含有基材用添加劑。   又,膨脹性基材可由包含樹脂及膨脹性粒子之樹脂組成物(y)所形成。   以下,針對膨脹性基材之形成材料的樹脂組成物(y)所含之各成分加以說明。The expandable base material included in the adhesive sheet of the present embodiment includes a resin and expandable particles, but as long as the effect of the present invention is not impaired, an additive for the base material may be contained as necessary. In addition, the expandable substrate may be formed of a resin composition (y) containing a resin and expandable particles. Hereinafter, each component contained in the resin composition (y) which is a forming material of an expandable base material is demonstrated.

<樹脂>   作為樹脂組成物(y)所含之樹脂,只要為可使膨脹性基材成為非黏著性之樹脂,則未特別限定,可為非黏著性樹脂,亦可為黏著性樹脂。   亦即,樹脂組成物(y)所含之樹脂即使為黏著性樹脂,只要在自樹脂組成物(y)形成膨脹性基材之過程中,該黏著性樹脂與聚合性化合物進行聚合反應,使所得樹脂成為非黏著性樹脂,而使包含該樹脂之膨脹性基材成為非黏著性即可。<Resin> The resin contained in the resin composition (y) is not particularly limited as long as it is a resin capable of making the expandable substrate non-adhesive, and may be a non-adhesive resin or an adhesive resin. That is, even if the resin contained in the resin composition (y) is an adhesive resin, as long as the expandable substrate is formed from the resin composition (y), the adhesive resin and the polymerizable compound undergo a polymerization reaction so that The obtained resin may be a non-adhesive resin, and the expandable substrate containing the resin may be made non-adhesive.

作為樹脂組成物(y)所含之前述樹脂之質量平均分子量(Mw)較好為1000~100萬,更好為1000~70萬,又更好為1000~50萬。   又,該樹脂為具有2種以上構成單位之共聚物時,該共聚物之形態並未特別限定,可為嵌段共聚物、無規共聚物及接枝共聚物之任一者。The mass average molecular weight (Mw) of the aforementioned resin contained in the resin composition (y) is preferably 10 to 1 million, more preferably 10 to 700,000, and still more preferably 10 to 500,000. In addition, when the resin is a copolymer having two or more constituent units, the form of the copolymer is not particularly limited, and may be any of a block copolymer, a random copolymer, and a graft copolymer.

前述樹脂之含量,相對於樹脂組成物(y)之有效成分全量(100質量%),較好為50~99質量%,更好為60~95質量%,又更好為65~90質量%,再更好為70~85質量%。The content of the resin is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, and still more preferably 65 to 90% by mass based on the total amount (100% by mass) of the active ingredient of the resin composition (y). And more preferably 70 to 85% by mass.

作為樹脂組成物(y)所含之前述樹脂,較好包含選自丙烯酸胺基甲酸酯系樹脂及烯烴系樹脂之1種以上。   又,作為上述丙烯酸胺基甲酸酯系樹脂,較好為以下之樹脂(U1)。   ・胺基甲酸酯預聚物(UP)與包含(甲基)丙烯酸酯之乙烯基化合物聚合成之丙烯酸胺基甲酸酯系樹脂(U1)。The resin contained in the resin composition (y) preferably contains one or more selected from the group consisting of an acrylic urethane resin and an olefin resin. As the acrylic urethane resin, the following resin (U1) is preferred. · Urethane prepolymer (UP) is an acrylic urethane resin (U1) formed by polymerizing a vinyl compound containing a (meth) acrylate.

[丙烯酸胺基甲酸酯系樹脂(U1)]   作為成為丙烯酸胺基甲酸酯系樹脂(U1)之主鏈的胺基甲酸酯預聚物(UP)舉例為多元醇與多元異氰酸酯之反應物。   又,胺基甲酸酯預聚物(UP)較好使用可進而使用鏈延長劑實施鏈延長反應者。[Acrylic urethane-based resin (U1)] The urethane prepolymer (UP) as the main chain of the acrylic urethane-based resin (U1) is exemplified by the reaction of a polyol and a polyisocyanate Thing. In addition, a urethane prepolymer (UP) is preferably used, and a chain extension reaction can be performed by using a chain extender.

作為成為胺基甲酸酯預聚物(UP)之原料的多元醇舉例為例如伸烷基型多元醇、醚型多元醇、酯型多元醇、酯醯胺型多元醇、酯/醚型多元醇、碳酸酯型多元醇等。   該等多元醇可單獨使用,亦可併用2種以上。   作為本實施形態所用之多元醇較好為二醇,更好為酯型二醇、伸烷基型二醇及碳酸酯型二醇,又更好為酯型二醇、碳酸酯型二醇。Examples of the polyol used as a raw material of the urethane prepolymer (UP) include, for example, an alkylene polyol, an ether polyol, an ester polyol, an esteramine polyol, and an ester / ether polyol. Alcohols, carbonate-type polyols, and the like. These polyols can be used alone or in combination of two or more.多元 As the polyhydric alcohol used in this embodiment, a diol is preferable, an ester diol, an alkylene diol, and a carbonate diol are more preferable, and an ester diol and a carbonate diol are more preferable.

作為酯型二醇舉例為例如1,3-丙二醇、1,4-丁二醇、1,5-戊二醇、新戊二醇、1,6-己二醇等之烷二醇;乙二醇、丙二醇、二乙二醇、二丙二醇等之烷二醇;等之二醇類選擇之1種或2種以上與鄰苯二甲酸、間苯二甲酸、對苯二甲酸、萘二羧酸、4,4-二苯基二羧酸、二苯基甲烷-4,4’-二羧酸、琥珀酸、己二酸、壬二酸、癸二酸、氯橋酸(Het acid)、馬來酸、富馬酸、依康酸、環己烷-1,3-二羧酸、環己烷-1,4-二羧酸、六氫鄰苯二甲酸、六氫間苯二甲酸、六氫對苯二甲酸、甲基六氫鄰苯二甲酸等之二羧酸及該等之酸酐選擇之1種或2種以上之聚縮合物。   具體而言,舉例為聚己二酸伸乙酯二醇、聚己二酸伸丁酯二醇、聚己二酸六亞甲酯二醇、聚間苯二甲酸六甲亞酯二醇、聚己二酸新戊酯二醇、聚己二酸伸乙基伸丙基酯二醇、聚己二酸伸乙基伸丁基酯二醇、聚己二酸伸丁基六亞甲基酯二醇、聚己二酸二伸乙基酯二醇、聚(聚四亞甲基醚)己二酸酯二醇、聚(3-甲基伸戊基己二酸酯)二醇、聚壬二酸伸乙酯二醇、聚癸二酸伸乙酯二醇、聚癸二酸伸丁酯二醇、聚癸二酸伸丁酯二醇及聚對苯二甲酸新戊酯二醇等。Examples of the ester-type diol include alkanediols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, and 1,6-hexanediol; ethylene glycol Alcohols such as alcohols, propylene glycol, diethylene glycol, dipropylene glycol, etc .; 1 or 2 or more diols selected with phthalic acid, isophthalic acid, terephthalic acid, naphthalene dicarboxylic acid , 4,4-diphenyldicarboxylic acid, diphenylmethane-4,4'-dicarboxylic acid, succinic acid, adipic acid, azelaic acid, sebacic acid, chloro bridge acid (Het acid), horse Maleic acid, fumaric acid, itaconic acid, cyclohexane-1,3-dicarboxylic acid, cyclohexane-1,4-dicarboxylic acid, hexahydrophthalic acid, hexahydroisophthalic acid, six Polycondensates of one or more types of dicarboxylic acids such as hydroterephthalic acid, methylhexahydrophthalic acid and the like, and anhydrides thereof. Specific examples include poly (ethylene adipate), poly (butylene adipate), poly (hexamethylene adipate), poly (hexamethylene isophthalate), and poly (hexamethylene isophthalate). Neopentyl didiol, poly (butylene adipate), poly (butylene adipate), poly (butylene adipate), poly (butylene adipate), poly (butylene adipate) Diethylene glycol adipate, poly (polytetramethylene ether) adipate glycol, poly (3-methylpentyl adipate) glycol, polyethylene adipate Ester glycol, polybutylene sebacate diol, polybutylene sebacate diol, polybutylene sebacate diol, and neopentyl terephthalate glycol.

作為伸烷基型二醇舉例為例如1,3-丙二醇、1,4-丁二醇、1,5-戊二醇、新戊二醇、1,6-己二醇等之烷二醇;乙二醇、丙二醇、二乙二醇、二丙二醇等之烷二醇;聚乙二醇、聚丙二醇、聚丁二醇等之聚烷二醇;聚四甲亞基二醇等之聚氧伸烷二醇等。Examples of the alkylene glycol include alkylene glycols such as 1,3-propanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, and 1,6-hexanediol; Alkane glycols such as ethylene glycol, propylene glycol, diethylene glycol, dipropylene glycol; polyalkylene glycols such as polyethylene glycol, polypropylene glycol, polybutanediol; polyoxyethylene such as polytetramethylene glycol Alkanediols, etc.

作為碳酸酯型二醇舉例為例如碳酸1,4-四亞甲基酯二醇、碳酸1,5-五亞甲基酯二醇、碳酸1,6-六亞甲基酯二醇、碳酸1,2-伸丙基酯二醇、碳酸1,3-伸丙基酯二醇、碳酸2,2-二甲基伸丙基酯二醇、碳酸1,7-七亞甲基酯二醇、碳酸1,8-八亞甲基酯二醇、碳酸1,4-環己酯二醇等。Examples of the carbonate-type diol include 1,4-tetramethylene carbonate, carbonate, 1,5-pentamethylene carbonate, 1,6-hexamethylene carbonate, and 1 carbonate. 2,2-propanediol, 1,3-propane carbonate, 2,2-dimethylpropane carbonate, 1,7-heptamethylene carbonate, 1,8-octamethylene carbonate, 1,4-cyclohexyl carbonate, and the like.

作為成為胺基甲酸酯預聚物(UP)之原料的多元異氰酸酯舉例為芳香族聚異氰酸酯、脂肪族聚異氰酸酯、脂環式聚異氰酸酯等。   該等多元異氰酸酯可單獨使用,亦可併用2種以上。   且,該等多元異氰酸酯亦可為三羥甲基丙烷加成型改質體、與水反應之縮二脲型改質體、含有異氰脲酸酯環之異氰脲酸酯型改質體。Examples of the polyisocyanate used as a raw material for the urethane prepolymer (UP) include aromatic polyisocyanate, aliphatic polyisocyanate, and alicyclic polyisocyanate. These polyisocyanates can be used alone or in combination of two or more. Moreover, these polyisocyanates can also be trimethylolpropane addition-shaped modifiers, biuret-type modifiers that react with water, and isocyanurate-type modifiers containing isocyanurate rings.

該等中,作為本實施形態所用之多元異氰酸酯,較好為二異氰酸酯,更好為選自4,4’-二苯基甲烷二異氰酸酯(MDI)、2,4-甲苯二異氰酸酯(2,4-TDI)、2,6-甲苯二異氰酸酯(2,6-TDI)、六亞甲基二異氰酸酯(HMDI)及脂環式二異氰酸酯中之1種以上。Among these, as the polyisocyanate used in this embodiment, diisocyanate is preferred, and more preferably selected from 4,4'-diphenylmethane diisocyanate (MDI) and 2,4-toluene diisocyanate (2,4 -TDI), 2,6-toluene diisocyanate (2,6-TDI), hexamethylene diisocyanate (HMDI) and alicyclic diisocyanate.

作為脂環式二異氰酸酯舉例為例如3-異氰酸酯基甲基-3,5,5-三甲基環己基異氰酸酯(異佛爾酮二異氰酸酯,IPDI)、1,3-環戊烷二異氰酸酯、1,3-環己烷二異氰酸酯、1,4-環己烷二異氰酸酯、甲基-2,4-環己烷二異氰酸酯、甲基-2,6-環己烷二異氰酸酯等,較好為異佛爾酮二異氰酸酯(IPDI)。Examples of the alicyclic diisocyanate include 3-isocyanatomethyl-3,5,5-trimethylcyclohexyl isocyanate (isophorone diisocyanate, IPDI), 1,3-cyclopentane diisocyanate, 1 1,3-cyclohexane diisocyanate, 1,4-cyclohexane diisocyanate, methyl-2,4-cyclohexane diisocyanate, methyl-2,6-cyclohexane diisocyanate, and the like are preferred. Furone diisocyanate (IPDI).

本實施形態中,作為成為丙烯酸胺基甲酸酯系樹脂(U1)之主鏈的胺基甲酸酯預聚物(UP)係二醇與二異氰酸酯之反應物,較好為於兩末端具有乙烯性不飽和基之直鏈胺基甲酸酯預聚物。   作為於該直鏈胺基甲酸酯預聚物之兩末端導入乙烯性不飽和基之方法,舉例為使二醇與二異氰酸酯化合物反應而成之直鏈胺基甲酸酯預聚物之末端的NCO基與(甲基)丙烯酸羥基烷酯反應之方法。In this embodiment, as a reactant between a urethane prepolymer (UP) diol and a diisocyanate, which is the main chain of the acrylic urethane resin (U1), it is preferable to have Ethylene unsaturated linear urethane prepolymer. As a method for introducing an ethylenically unsaturated group at both ends of the linear urethane prepolymer, the end of the linear urethane prepolymer obtained by reacting a diol with a diisocyanate compound is exemplified. Method for reacting NCO group with hydroxyalkyl (meth) acrylate.

作為(甲基)丙烯酸羥基烷酯舉例為例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等。Examples of the hydroxyalkyl (meth) acrylate include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and (meth) acrylic acid. 2-hydroxybutyl ester, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and the like.

作為成為丙烯酸胺基甲酸酯系樹脂(U1)之側鏈的乙烯基化合物至少包含(甲基)丙烯酸酯。   作為(甲基)丙烯酸酯,較好為選自(甲基)丙烯酸烷酯及(甲基)丙烯酸羥基烷酯之1種以上,更好併用(甲基)丙烯酸烷酯及(甲基)丙烯酸羥基烷酯。The vinyl compound as a side chain of the acrylic urethane-based resin (U1) contains at least a (meth) acrylate. The (meth) acrylate is preferably one or more selected from alkyl (meth) acrylate and hydroxyalkyl (meth) acrylate, and more preferably a combination of (meth) acrylate and (meth) acrylic acid Hydroxyalkyl esters.

併用(甲基)丙烯酸烷酯及(甲基)丙烯酸羥基烷酯時,相對於(甲基)丙烯酸烷酯100質量份,作為(甲基)丙烯酸羥基烷酯之調配比例,較好為0.1~100質量份,更好為0.5~30質量份,又更好為1.0~20質量份,再更好為1.5~10質量份。When an alkyl (meth) acrylate and a hydroxyalkyl (meth) acrylate are used in combination, the blending ratio of the hydroxyalkyl (meth) acrylate is preferably 0.1 to 100 parts by mass of the (meth) acrylate. 100 parts by mass, more preferably 0.5 to 30 parts by mass, still more preferably 1.0 to 20 parts by mass, even more preferably 1.5 to 10 parts by mass.

作為(甲基)丙烯酸烷酯所具有之烷基碳數較好為1~24,更好為1~12,又更好為1~8,再更好為1~3。The alkyl carbon number of the alkyl (meth) acrylate is preferably from 1 to 24, more preferably from 1 to 12, still more preferably from 1 to 8, and even more preferably from 1 to 3.

又,作為(甲基)丙烯酸羥基烷酯,舉例為與用以於上述直鏈胺基甲酸酯預聚物之兩末端導入乙烯性不飽和基所用之(甲基)丙烯酸羥基烷酯相同者。The hydroxyalkyl (meth) acrylate is the same as the hydroxyalkyl (meth) acrylate used to introduce an ethylenically unsaturated group at both ends of the linear urethane prepolymer. .

作為(甲基)丙烯酸烷酯以外之乙烯基化合物,舉例為例如苯乙烯、α-甲基苯乙烯、乙烯基甲苯等之芳香族烴系乙烯基化合物;甲基乙烯醚、乙基乙烯醚等之乙烯醚類;乙酸乙烯酯、丙酸乙烯酯、(甲基)丙烯腈、N-乙烯基吡咯啶酮、(甲基)丙烯酸、馬來酸、富馬酸、依康酸、甲基(丙烯醯胺)等之含極性基之單體;等。   該等可單獨使用,亦可併用2種以上。Examples of vinyl compounds other than alkyl (meth) acrylates include aromatic hydrocarbon-based vinyl compounds such as styrene, α-methylstyrene, vinyl toluene, and the like; methyl vinyl ether, ethyl vinyl ether, and the like Vinyl ethers; vinyl acetate, vinyl propionate, (meth) acrylonitrile, N-vinyl pyrrolidone, (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid, methyl ( Acrylamide) and other polar group-containing monomers; etc. These can be used alone or in combination of two or more.

作為乙烯基化合物中之(甲基)丙烯酸酯之含量,相對於該乙烯基化合物之全量(100質量%),較好為40~100質量%,更好為65~100質量%,又更好為80~100質量%,再更好為90~100質量%。The content of the (meth) acrylate in the vinyl compound is preferably 40 to 100% by mass, more preferably 65 to 100% by mass, and more preferably relative to the total amount (100% by mass) of the vinyl compound. It is 80 to 100% by mass, and more preferably 90 to 100% by mass.

作為乙烯基化合物中之(甲基)丙烯酸烷酯及(甲基)丙烯酸羥基烷酯之合計含量,相對於該乙烯基化合物之全量(100質量%),較好為40~100質量%,更好為65~100質量%,又更好為80~100質量%,再更好為90~100質量%。The total content of the alkyl (meth) acrylate and the hydroxyalkyl (meth) acrylate in the vinyl compound is preferably from 40 to 100 mass% relative to the total amount (100% by mass) of the vinyl compound, and more preferably It is preferably 65 to 100% by mass, more preferably 80 to 100% by mass, and even more preferably 90 to 100% by mass.

本實施形態所用之丙烯酸胺基甲酸酯系樹脂(U1)係將胺基甲酸酯預聚物(UP)與包含(甲基)丙烯酸酯之乙烯基化合物混合,使兩者聚合而得。   該聚合中,較好進而添加自由基起始劑進行。The acrylic urethane resin (U1) used in this embodiment is obtained by mixing a urethane prepolymer (UP) with a vinyl compound containing a (meth) acrylate, and polymerizing the two. In this polymerization, it is preferred to perform the polymerization by adding a radical initiator.

本實施形態所用之丙烯酸胺基甲酸酯系樹脂(U1)中,源自胺基甲酸酯預聚物(UP)之構成單位(u11)與源自乙烯基化合物之構成單位(u12)之含量比[(u11)/(u12)],以質量比計,較好為10/90~80/20,更好為20/80~70/30,又更好為30/70~60/40,再更好為35/65~55/45。In the acrylic urethane resin (U1) used in this embodiment, the unit (u11) derived from the urethane prepolymer (UP) and the unit (u12) derived from the vinyl compound The content ratio [(u11) / (u12)] in terms of mass ratio is preferably 10/90 to 80/20, more preferably 20/80 to 70/30, and even more preferably 30/70 to 60/40 , And more preferably 35/65 to 55/45.

[烯烴系樹脂]   作為樹脂組成物(y)所含之樹脂較佳者,作為烯烴系樹脂,係至少具有源自烯烴單體之構成單位的聚合物。   作為上述烯烴單體,較好為碳數2~8之α-烯烴,具體而言舉例為乙烯、丙烯、丁烯、異丁烯、1-己烯等。   該等中,較好為乙烯及丙烯。[Olefin Resin] (i) As the resin contained in the resin composition (y), it is preferred that the olefin resin is a polymer having at least a constituent unit derived from an olefin monomer. As the olefin monomer, an α-olefin having 2 to 8 carbon atoms is preferred, and specific examples thereof include ethylene, propylene, butene, isobutylene, and 1-hexene. Of these, ethylene and propylene are preferred.

作為具體之烯烴系樹脂舉例為例如超低密度聚乙烯(VLDPE,密度:880kg/m3 以上且未滿910kg/m3 )、低密度聚乙烯(LDPE,密度:910kg/m3 以上且未滿915 kg/m3 )、中密度聚乙烯(MDPE,密度:915kg/m3 以上且未滿942kg/m3 )、高密度聚乙烯(HDPE,密度:942kg/m3 以上)、直鏈狀低密度聚乙烯等之聚乙烯樹脂;聚丙烯樹脂(PP);聚丁烯樹脂(PB);乙烯-丙烯共聚物;烯烴系彈性體(TPO);聚(4-甲基-1-戊烯)(PMP);乙烯-乙酸乙烯酯共聚物(EVA);乙烯-乙烯醇共聚物(EVOH);乙烯-丙烯-(5-亞乙基-2-降冰片烯)等之烯烴系三元共聚物;等。Specific examples of the olefin-based resin include, for example, ultra-low density polyethylene (VLDPE, density: 880 kg / m 3 or more and less than 910 kg / m 3 ), and low density polyethylene (LDPE, density: 910 kg / m 3 or more and less than 915 kg / m 3 ), medium density polyethylene (MDPE, density: 915 kg / m 3 or more and less than 942 kg / m 3 ), high density polyethylene (HDPE, density: 942 kg / m 3 or more), low linearity Polyethylene resin such as density polyethylene; polypropylene resin (PP); polybutene resin (PB); ethylene-propylene copolymer; olefinic elastomer (TPO); poly (4-methyl-1-pentene) (PMP); ethylene-vinyl acetate copolymer (EVA); ethylene-vinyl alcohol copolymer (EVOH); olefin-based terpolymers such as ethylene-propylene- (5-ethylidene-2-norbornene) ;Wait.

本實施形態中,烯烴系樹脂亦可為進而施以選自酸改質、羥基改質、及丙烯酸改質之1種以上改質之改質烯烴系樹脂。In this embodiment, the olefin-based resin may be a modified olefin-based resin further subjected to one or more modifications selected from the group consisting of acid modification, hydroxyl modification, and acrylic modification.

例如作為對烯烴系樹脂施以酸改質之酸改質烯烴系樹脂,舉例為對上述之無改質烯烴系樹脂接枝聚合不飽和羧酸或其酸酐而成之改質聚合物。   作為上述不飽和羧酸或其酸酐舉例為例如馬來酸、富馬酸、依康酸、檸康酸、戊烯二酸、四氫鄰苯二甲酸、烏頭酸、(甲基)丙烯酸、馬來酸酐、依康酸酐、戊烯二酸酐、檸康酸酐、烏頭酸酐、降冰片烯二羧酸酐、四氫鄰苯二甲酸酐等。   又,不飽和羧酸或其酸酐可單獨使用,亦可併用2種以上。For example, as the acid-modified olefin-based resin which is subjected to acid modification to the olefin-based resin, the modified polymer obtained by graft-polymerizing an unsaturated carboxylic acid or an anhydride thereof to the above-mentioned non-modified olefin-based resin is exemplified. Examples of the unsaturated carboxylic acid or its anhydride include maleic acid, fumaric acid, itaconic acid, citraconic acid, glutaric acid, tetrahydrophthalic acid, aconitic acid, (meth) acrylic acid, and horse Maleic anhydride, itaconic anhydride, glutaric anhydride, citraconic anhydride, aconitic anhydride, norbornene dicarboxylic anhydride, tetrahydrophthalic anhydride, and the like. The unsaturated carboxylic acid or its anhydride may be used alone or in combination of two or more.

作為對烯烴系樹脂施以丙烯酸改質之丙烯酸改質烯烴系樹脂,舉例為對主鏈的上述無改質烯烴系樹脂接枝聚合作為側鏈之(甲基)丙烯酸烷酯之改質聚合物。   作為上述(甲基)丙烯酸烷酯所具有的烷基之碳數較好為1~20,更好為1~16,又更好為1~12。   作為上述(甲基)丙烯酸烷酯舉例為例如與作為後述之單體(a1’)而可選擇之化合物相同者。Examples of acrylic modified olefin resins which are modified by acrylic acid to olefin resins include modified polymers of the main chain of the above-mentioned non-modified olefin resin graft polymerized as (meth) acrylic acid alkyl esters as side chains. . The number of carbon atoms of the alkyl group in the fluorene as the alkyl (meth) acrylate is preferably from 1 to 20, more preferably from 1 to 16, and even more preferably from 1 to 12. As the above-mentioned alkyl (meth) acrylate, for example, the same compounds as those which can be selected as the monomer (a1 ') described later are exemplified.

作為對烯烴系樹脂施以羥基改質之羥基改質烯烴系樹脂,舉例為對主鏈的上述無改質烯烴系樹脂接枝聚合含羥基之化合物之改質聚合物。   作為上述含羥基之化合物舉例為例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等之(甲基)丙烯酸羥基烷酯類;乙烯醇、烯丙醇等之不飽和醇類等。Examples of the hydroxy-modified olefin-based resin in which the olefin-based resin is modified with a hydroxyl group include modified polymers in which a main chain of the above-mentioned non-modified olefin-based resin is graft-polymerized with a hydroxyl-containing compound. Examples of the hydroxyl-containing compound include, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and 2-hydroxy (meth) acrylate Butyl ester, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and the like; hydroxyalkyl (meth) acrylates; unsaturated alcohols such as vinyl alcohol and allyl alcohol.

[丙烯酸胺基甲酸酯系樹脂及烯烴系樹脂以外之樹脂]   本實施形態中,樹脂組成物(y)中,在不損及本發明效果之範圍內,可含有丙烯酸胺基甲酸酯系樹脂及烯烴系樹脂以外之樹脂。   作為此等樹脂舉例為例如聚氯乙烯、聚偏氯乙烯、聚乙烯醇等之乙烯系樹脂;聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等之聚酯系樹脂;聚苯乙烯;丙烯腈-丁二烯-苯乙烯共聚物;三乙酸纖維素;聚碳酸酯;不相當於丙烯酸胺基甲酸酯系樹脂之聚胺基甲酸酯;聚碸;聚醚醚酮;聚醚碸;聚苯硫醚;聚醚醯亞胺、聚醯亞胺等之聚醯亞胺系樹脂;聚醯胺系樹脂;丙烯酸樹脂;氟系樹脂等。   作為丙烯酸胺基甲酸酯系樹脂及烯烴系樹脂以外之樹脂含有比例,相對於樹脂組成物(y)中所含之樹脂全量100質量份,較好為未滿30質量份,更好未滿20質量份,又更好未滿10質量份,再更好未滿5質量份,又再更好未滿1質量份。[Resins other than acrylic urethane resin and olefin resin] In the present embodiment, the resin composition (y) may contain an acrylic urethane resin as long as the effect of the present invention is not impaired. Resins other than resins and olefin resins. Examples of such resins are vinyl resins such as polyvinyl chloride, polyvinylidene chloride, polyvinyl alcohol, etc .; polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate Polyester resins such as polystyrene; acrylonitrile-butadiene-styrene copolymer; cellulose triacetate; polycarbonate; polyurethanes not equivalent to acrylic urethane resins Polyfluorene; Polyetheretherketone; Polyetherfluorene; Polyphenylenesulfide; Polyetherimide resins such as polyetherimide, polyimide, etc .; Polyimide resins; acrylic resins; fluorine resins, etc. . The content ratio of the resin other than the acrylic urethane resin and the olefin resin is preferably less than 30 parts by mass, and more preferably less than 100 parts by mass based on 100 parts by mass of the total amount of the resin contained in the resin composition (y). 20 parts by mass, more preferably less than 10 parts by mass, even more preferably less than 5 parts by mass, and still more preferably less than 1 part by mass.

<膨脹性粒子>   膨脹性粒子若為可藉由外部刺激以其本身膨脹而於黏著劑層形成凹凸,可降低與黏著體之接著力者,則未特別限制。   作為膨脹性粒子舉例為例如藉由加熱而膨脹之熱膨脹性粒子,藉由能量線之照射而膨脹之能量線膨脹性粒子等,但基於廣泛使用性及處理性之觀點,較好為熱膨脹性粒子。<Expansive particles> Expansive particles are not particularly limited as long as they can expand and form undulations on the adhesive layer by external stimuli, and can reduce adhesion to the adhesive body. Examples of the expandable particles include, for example, heat-expandable particles that expand by heating, and energy-line expandable particles that expand by irradiation with energy rays. From the viewpoint of wide usability and handling, heat-expandable particles are preferred. .

作為熱膨脹性粒子較好係調整為膨脹開始溫度(t)為120~250℃之粒子。   又,本說明書中,熱膨脹性粒子之膨脹開始溫度(t)意指基於以下方法測定之值。 [熱膨脹性粒子之膨脹開始溫度(t)之測定法]   製作於直徑6.0mm(內徑5.65mm)、深4.8mm之鋁盤中,添加成為測定對象之熱膨脹性粒子0.5mg,自其上蓋住鋁蓋(直徑5.6mm,厚0.1mm)之試料。   使用動態黏彈性測定裝置,對該試料自鋁蓋上部藉由加壓子施加0.01N的力之狀態,測定試料高度。接著,以藉由加壓子施加0.01N的力之狀態,以10℃/min之升溫速度自20℃加熱至300℃,測定加壓子於垂直方向之位移量,將朝正方向之位移開始溫度作為膨脹開始溫度(t)。The thermally expandable particles are preferably particles adjusted to have an expansion start temperature (t) of 120 to 250 ° C. In addition, in this specification, the expansion start temperature (t) of a thermally expandable particle means the value measured based on the following method. [Method for measuring the expansion start temperature (t) of thermally expandable particles] Prepared in an aluminum pan with a diameter of 6.0 mm (inner diameter 5.65 mm) and a depth of 4.8 mm, add 0.5 mg of the thermally expandable particles to be measured, and cover it Hold the aluminum cover (5.6mm diameter, 0.1mm thickness) sample. Using a dynamic viscoelasticity measuring device, a height of the sample was measured by applying a force of 0.01 N to the sample from the upper part of the aluminum cover by a pressurizer. Next, in a state where a force of 0.01 N is applied by the pressurizer, it is heated from 20 ° C. to 300 ° C. at a heating rate of 10 ° C./min, and the displacement amount of the pressurizer in the vertical direction is measured to start the displacement in the positive direction. The temperature was taken as the expansion start temperature (t).

作為熱膨脹性粒子較好係由熱塑性樹脂所構成之外殼與由該外殼所內包且加熱至特定溫度時會氣化之內包成分所構成之微膠囊化發泡劑。   作為構成微膠囊化發泡劑之外殼的熱塑性樹脂舉例為例如偏氯乙烯-丙烯腈共聚物、聚乙烯醇、聚乙烯縮丁醛、聚甲基丙烯酸甲酯、聚丙烯腈、聚偏氯乙烯、聚碸等。The heat-expandable particles are preferably a microencapsulated foaming agent composed of an outer casing made of a thermoplastic resin and an inner packaging component enclosed by the outer casing and vaporized when heated to a specific temperature. Examples of the thermoplastic resin constituting the shell of the microencapsulated foaming agent are, for example, vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride , Juyi and so on.

作為內包於外殼之內包成分舉例為例如丙烷、丁烷、戊烷、己烷、庚烷、辛烷、壬烷、癸烷、異丁烷、異戊烷、異己烷、異庚烷、異辛烷、異壬烷、異癸烷、環丙烷、環丁烷、環戊烷、環己烷、環庚烷、環辛烷、新戊烷、十二烷、異十二烷、環十三烷、己基環己烷、十三烷、十四烷、十五烷、十六烷、十七烷、十八烷、十九烷、異十三烷、4-甲基十二烷、異十四烷、異十五烷、異十六烷、2,2,4,4,6,8,8-七甲基壬烷、異十七烷、異十八烷、異十九烷、2,6,10,14-四甲基十七烷、環十三烷、庚基環己烷、正辛基環己烷、環十五烷、壬基環己烷、癸基環己烷、十五烷基環己烷、十六烷基環己烷、十七烷基環己烷、十八烷基環己烷等。   該等內包成分可單獨使用,亦可併用兩種以上。   熱膨脹性粒子之膨脹開始溫度(t)可藉由適當選擇內包成分種類而調整。Examples of the internal components enclosed in the shell include propane, butane, pentane, hexane, heptane, octane, nonane, decane, isobutane, isopentane, isohexane, isoheptane, Isooctane, isononane, isodecane, cyclopropane, cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, neopentane, dodecane, isododecane, cyclodeca Trioxane, hexylcyclohexane, tridecane, tetradecane, pentadecane, hexadecane, heptadecane, octadecane, nonadecane, isotridecane, 4-methyldodecane, iso Tetradecane, isopentadecane, isohexadecane, 2,2,4,4,6,8,8-heptamethylnonane, isoheptadecane, isooctadecane, isodecadecane, 2 , 6,10,14-tetramethylheptadecane, cyclotridecane, heptylcyclohexane, n-octylcyclohexane, cyclopentadecane, nonylcyclohexane, decylcyclohexane, ten Pentaalkylcyclohexane, cetylcyclohexane, heptadecylcyclohexane, octadecylcyclohexane and the like. These ingredients can be used alone or in combination of two or more.膨胀 The expansion start temperature (t) of the thermally expandable particles can be adjusted by appropriately selecting the type of the inclusion component.

本實施形態所用之熱膨脹性粒子加熱至熱膨脹開始溫度(t)以上之溫度時之體積最大膨脹率較好為1.5~100倍,更好為2~80倍,又更好為2.5~60倍,再更好為3~40倍。The maximum volume expansion rate of the thermally expandable particles used in this embodiment when heated to a temperature above the thermal expansion start temperature (t) is preferably 1.5 to 100 times, more preferably 2 to 80 times, and even more preferably 2.5 to 60 times. It is more preferably 3 to 40 times.

本實施形態所用之膨脹性粒子於23℃下之膨脹前的平均粒徑較好為3~100μm,更好為4~70μm,又更好為6~60μm,再更好為10~50μm。   又,膨脹性粒子之膨脹前的平均粒徑為體積中值粒徑(D50 ),意指使用雷射繞射式粒度分佈測定裝置(例如Malvern公司製,製品名「Mastersizer 3000」)測定之膨脹前之膨脹性粒子的粒子分佈中,自膨脹前之膨脹性粒子之粒徑小者起計算的累積體積頻度相當於50%之粒徑。The average particle diameter of the expandable particles used in this embodiment before expansion at 23 ° C. is preferably 3 to 100 μm, more preferably 4 to 70 μm, still more preferably 6 to 60 μm, and even more preferably 10 to 50 μm. In addition, the average particle diameter before expansion of the expandable particles is the volume median particle diameter (D 50 ), which means that it is measured using a laser diffraction particle size distribution measuring device (for example, manufactured by Malvern, product name "Mastersizer 3000"). In the particle distribution of the expandable particles before expansion, the cumulative volume frequency calculated from the smaller one of the expandable particles before expansion corresponds to a particle size of 50%.

本實施形態所用之膨脹性粒子於23℃下之膨脹前的90%粒徑(D90 )較好為10~150μm,更好為20~100 μm,又更好為25~90μm,再更好為30~80μm。   又,熱膨脹性粒子之膨脹前的90%粒徑(D90 ),意指使用雷射繞射式粒度分佈測定裝置(例如Malvern公司製,製品名「Mastersizer 3000」)測定之膨脹前之膨脹性粒子的粒子分佈中,自膨脹前之膨脹性粒子之粒徑小者起計算的累積體積頻度相當於90%之粒徑。The 90% particle diameter (D 90 ) of the expandable particles used in this embodiment before expansion at 23 ° C. is preferably 10 to 150 μm, more preferably 20 to 100 μm, still more preferably 25 to 90 μm, and even more preferably It is 30 to 80 μm. The 90% particle size (D 90 ) before the expansion of thermally expandable particles means the swelling property before expansion measured using a laser diffraction particle size distribution measuring device (for example, manufactured by Malvern, product name "Mastersizer 3000"). In the particle distribution of the particles, the cumulative volume frequency calculated from the smaller particle diameter of the expandable particles before expansion corresponds to a particle diameter of 90%.

膨脹性粒子之含量,相對於樹脂組成物(y)之有效成分全量(100質量%),較好為1~40質量%,更好為5~35質量%,又更好為10~30質量%,再更好為15~25質量%。The content of the expandable particles is preferably 1 to 40% by mass, more preferably 5 to 35% by mass, and still more preferably 10 to 30% by mass relative to the total amount (100% by mass) of the effective component of the resin composition (y). %, More preferably 15 to 25% by mass.

<基材用添加劑>   本實施形態所用之樹脂組成物(y),在不損及本發明效果之範圍內,亦可含有一般黏著薄片所具有之基材中所含之基材用添加劑。   作為此等基材用添加劑舉例為例如紫外線吸收劑、光安定劑、抗氧化劑、抗靜電劑、滑劑、抗黏連劑、著色劑等。   又,該等基材用添加劑各可單獨使用,亦可組合2種以上使用。   含有該等基材用添加劑時,各基材用添加劑之含量,相對於樹脂組成物(y)中之前述樹脂100質量份,較好為0.0001~20質量份,更好為0.001~10質量份。<Additives for Substrates> The resin composition (y) used in the present embodiment may contain additives for substrates contained in a substrate included in a general adhesive sheet, as long as the effect of the present invention is not impaired. Examples of such additives for substrates include ultraviolet absorbers, light stabilizers, antioxidants, antistatic agents, slip agents, anti-blocking agents, colorants, and the like. In addition, each of these base material additives may be used alone, or two or more kinds may be used in combination. When such additives for substrates are contained, the content of the additives for each substrate is preferably 0.0001 to 20 parts by mass, and more preferably 0.001 to 10 parts by mass relative to 100 parts by mass of the aforementioned resin in the resin composition (y). .

<無溶劑型樹脂組成物(y1)>   本實施形態所用之樹脂組成物(y)之一態樣,舉例為調配有質量平均分子量(Mw)為50000以下之具有乙烯性不飽和基之寡聚物與能量線聚合性單體及上述膨脹性粒子,而未調配溶劑之無溶劑型樹脂組成物(y1)。   無溶劑型樹脂組成物(y1)係未調配溶劑,但能量線聚合性單體有助於提高前述寡聚物之可塑性者。   對於自無溶劑型樹脂組成物(y1)形成之塗膜照射能量線,可獲得膨脹性基材。<Solventless resin composition (y1)> 之一 One aspect of the resin composition (y) used in this embodiment, for example, an oligomer having an ethylenically unsaturated group with a mass average molecular weight (Mw) of 50,000 or less is exemplified. The solvent-free resin composition (y1) without a solvent and an energy ray polymerizable monomer and the above-mentioned swellable particles.溶剂 The solventless resin composition (y1) is not a solvent, but the energy ray polymerizable monomer contributes to improving the plasticity of the oligomer.照射 The coating film formed from the solventless resin composition (y1) is irradiated with energy rays to obtain an expandable substrate.

關於無溶劑型樹脂組成物(y1)中調配之膨脹性粒子之種類、形狀、調配量(含量)係如上述。The type, shape, and amount (content) of the swellable particles prepared in the solventless resin composition (y1) are as described above.

無溶劑型樹脂組成物(y1)所含之前述寡聚物之質量平均分子量(Mw)為50000以下,但較好為1000~50000,更好為2000~40000,又更好為3000~35000,再更好為4000~30000。The mass average molecular weight (Mw) of the aforementioned oligomer contained in the solventless resin composition (y1) is 50,000 or less, but preferably 1,000 to 50,000, more preferably 2,000 to 40,000, and even more preferably 3,000 to 35,000. It is more preferably 4,000 to 30,000.

且,作為前述寡聚物只要為上述樹脂組成物(y)所含之樹脂中,質量平均分子量(Mw)為50000以下之具有乙烯性不飽和基者即可,但較好為上述之胺基甲酸酯預聚物(UP)。   又,作為該寡聚物亦可使用具有乙烯性不飽和基之改質烯烴系樹脂等。In addition, as the oligomer, any resin having an ethylenically unsaturated group with a mass average molecular weight (Mw) of 50,000 or less in the resin contained in the resin composition (y) may be used, but the above-mentioned amine group is preferred. Formate prepolymer (UP). In addition, as the oligomer, a modified olefin-based resin having an ethylenically unsaturated group can also be used.

無溶劑型樹脂組成物(y1)中之前述寡聚物及前述能量線聚合性單體之合計含量,相對於無溶劑型樹脂組成物(y1)之全量(100質量%),較好為50~99質量%,更好為60~95質量%,又更好為65~90質量%,再更好為70~85質量%。The total content of the oligomer and the energy ray polymerizable monomer in the solventless resin composition (y1) is preferably 50 relative to the total amount (100% by mass) of the solventless resin composition (y1). ~ 99 mass%, more preferably 60-95 mass%, still more preferably 65-90 mass%, and even more preferably 70-85 mass%.

作為能量線聚合性單體舉例為例如(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸二環戊烯氧基酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸金剛烷酯、丙烯酸三環癸酯等之脂環式聚合性化合物;丙烯酸苯基羥基丙酯、丙烯酸苄酯、酚環氧乙烷改質丙烯酸酯等之芳香族聚合性化合物;(甲基)丙烯酸四氫糠酯、嗎啉丙烯酸酯、N-乙烯基吡咯啶酮、N-乙烯基己內醯胺等之雜環式聚合性化合物等。   該等能量線聚合性單體可單獨使用,亦可併用2種以上。Examples of the energy ray polymerizable monomer include isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentyl (meth) acrylate, and dicyclopentenyl (meth) acrylate. Alicyclic polymerizable compounds such as methyl ester, cyclohexyl (meth) acrylate, adamantane (meth) acrylate, tricyclodecyl acrylate, etc .; phenylhydroxypropyl acrylate, benzyl acrylate, ethoxylate Aromatic polymerizable compounds such as alkane-modified acrylate; heterocyclic polymerization of tetrahydrofurfuryl (meth) acrylate, morpholine acrylate, N-vinylpyrrolidone, N-vinylcaprolactam, etc. Sexual compounds. These energy ray polymerizable monomers can be used alone or in combination of two or more.

無溶劑型樹脂組成物(y1)中之前述寡聚物與前述能量線聚合性單體之含量比(前述寡聚物/能量線聚合性單體)以質量比計,較好為20/80~90/10,更好為30/70~85/15,又更好為35/65~80/20。The content ratio of the oligomer to the energy ray polymerizable monomer (the oligomer / energy ray polymerizable monomer) in the solventless resin composition (y1) is preferably 20/80 in terms of mass ratio ~ 90/10, more preferably 30/70 to 85/15, and still more preferably 35/65 to 80/20.

本實施形態中,無溶劑型樹脂組成物(y1)較好進而調配光聚合起始劑。   藉由含有光聚合起始劑,即使以比較低能量之能量線照射,亦可充分進行硬化反應。In this embodiment, the solventless resin composition (y1) is preferably further formulated with a photopolymerization initiator.含有 By containing a photopolymerization initiator, the hardening reaction can proceed sufficiently even if it is irradiated with a relatively low energy energy ray.

作為光聚合起始劑舉例為例如1-羥基-環己基-苯基酮、苯偶因、苯偶因甲醚、苯偶因乙醚、苯偶因丙醚、苯偶因苯硫醚、四甲基秋蘭姆單硫醚、偶氮雙異丁腈、聯苯醯、聯乙醯、8-氯蒽醌等。   該等光聚合起始劑可單獨使用,亦可併用2種以上。Examples of the photopolymerization initiator include 1-hydroxy-cyclohexyl-phenyl ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin phenyl sulfide, tetramethyl Kithiuram monosulfide, azobisisobutyronitrile, biphenylhydrazone, biacetamidine, 8-chloroanthraquinone, etc. The photopolymerization initiators can be used alone or in combination of two or more.

光聚合起始劑之調配量,相對於前述寡聚物及能量線聚合性單體之全量(100質量份),較好為0.01~5質量份,更好為0.01~4質量份,又更好為0.02~3質量份。The blending amount of the photopolymerization initiator is preferably from 0.01 to 5 parts by mass, more preferably from 0.01 to 4 parts by mass, and more than the total amount (100 parts by mass) of the aforementioned oligomer and energy ray polymerizable monomer. It is preferably 0.02 to 3 parts by mass.

<基材之儲存模數>   本實施形態之黏著薄片所具有之膨脹性基材之23℃下之儲存模數E’(23),較好為1.0×106 Pa以上,更好為5.0×106 ~5.0×1012 Pa,又更好為1.0×107 ~1.0×1012 Pa,再更好為5.0×107 ~1.0×1011 Pa,又再更好為1.0×108 ~1.0×1010 Pa。藉由使用儲存模數E’(23)在上述範圍內之膨脹性基材,可防止半導體晶片之位置偏移,並且亦可防止半導體晶片朝黏著劑層之沉入。   例如,可使半導體晶片以其電路面經黏著劑層之黏著表面覆蓋之方式載置。半導體晶片之載置中,有時使用覆晶黏合機、晶片黏合機等之習知裝置。上述順序中,使用覆晶黏合機或晶片黏合機,將半導體晶片載置於黏著薄片之黏著劑層上時,由於施加將半導體晶片壓向黏著薄片之厚度方向之壓入力,故有半導體晶片過度沉入黏著劑層之厚度方向側之虞。又,使用覆晶黏合機或晶片黏合機,將半導體晶片載置於黏著薄片上時,由於亦對半導體晶片施加朝黏著薄片之水平方向移動之力,故亦有半導體晶片於黏著劑層之水平方向之位置偏移之虞。然而,藉由使用滿足上述儲存模數E’(23)之膨脹性基材,亦可解決該等問題。   又,本說明書中,特定溫度下之膨脹性基材的儲存模數E’意指藉由實施例所記載之方法測定之值。<Storage modulus of base material> The storage modulus E '(23) at 23 ° C of the expansive base material of the adhesive sheet of this embodiment is preferably 1.0 × 10 6 Pa or more, and more preferably 5.0 × 10 6 ~ 5.0 × 10 12 Pa, more preferably 1.0 × 10 7 ~ 1.0 × 10 12 Pa, even more preferably 5.0 × 10 7 ~ 1.0 × 10 11 Pa, and still more preferably 1.0 × 10 8 ~ 1.0 × 10 10 Pa. By using an expansive substrate having a storage modulus E '(23) within the above range, the position of the semiconductor wafer can be prevented from shifting, and the semiconductor wafer can also be prevented from sinking into the adhesive layer. For example, the semiconductor wafer can be placed in such a manner that its circuit surface is covered with the adhesive surface of the adhesive layer. In the mounting of semiconductor wafers, conventional devices such as flip-chip bonding machines and wafer bonding machines are sometimes used. In the above sequence, when using a flip-chip bonding machine or a wafer bonding machine, when a semiconductor wafer is placed on the adhesive layer of the adhesive sheet, the semiconductor wafer is excessive due to the pressing force of pressing the semiconductor wafer in the thickness direction of the adhesive sheet. It may sink into the thickness direction side of the adhesive layer. In addition, when using a flip-chip bonding machine or a wafer bonding machine, when a semiconductor wafer is placed on the adhesive sheet, the semiconductor wafer is also moved horizontally to the adhesive sheet, so there is also a semiconductor wafer at the level of the adhesive layer. There is a possibility that the position of the direction may be shifted. However, these problems can also be solved by using an expandable substrate that satisfies the above-mentioned storage modulus E '(23). In this specification, the storage modulus E 'of the expandable substrate at a specific temperature means a value measured by the method described in the examples.

再者,本實施形態之黏著薄片具有之膨脹性基材較好其儲存模數滿足以下要件(1)。   ・要件(1):在100℃下之前述膨脹性基材的儲存模數E’(100)為2.0×105 Pa以上。   藉由具有滿足要件(1)之膨脹性基材,即使於FOWLP及FOPLP之製造過程中之密封步驟之溫度環境下,由於可良好程度地抑制膨脹性粒子之流動,故設於膨脹性基材上之黏著劑層的黏著表面亦難以變形。其結果,可防止半導體晶片之位置偏移,並且亦可防止半導體晶片朝黏著劑層之沉入。In addition, it is preferable that the storage substrate provided by the adhesive sheet of the present embodiment has a storage modulus that satisfies the following requirement (1).・ Requirement (1): The storage modulus E '(100) of the aforementioned expandable substrate at 100 ° C is 2.0 × 10 5 Pa or more. By having an expandable substrate that satisfies the requirement (1), even in the temperature environment of the sealing step in the manufacturing process of FOWLP and FOPLP, the flow of the expandable particles can be suppressed to a good degree, so it is set on the expandable substrate. The adhesive surface of the upper adhesive layer is also difficult to deform. As a result, the position of the semiconductor wafer can be prevented from being shifted, and the semiconductor wafer can be prevented from sinking toward the adhesive layer.

基於上述觀點,膨脹性基材之儲存模數E’(100),較好為4.0×105 Pa以上,更好為6.0×105 Pa以上,又更好為8.0×105 Pa以上,再更好為1.0×106 Pa以上。   又,於密封步驟中,基於有效抑制半導體晶片之位置偏移之觀點,膨脹性基材之儲存模數E’(100),較好為1.0×1012 Pa以上,更好為1.0×1011 Pa以下,又更好為1.0×1010 Pa以下,再更好為1.0×109 Pa以下。Based on the above viewpoint, the storage modulus E '(100) of the expandable substrate is preferably 4.0 × 10 5 Pa or more, more preferably 6.0 × 10 5 Pa or more, and even more preferably 8.0 × 10 5 Pa or more. It is more preferably 1.0 × 10 6 Pa or more. In addition, in the sealing step, from the viewpoint of effectively suppressing the positional displacement of the semiconductor wafer, the storage modulus E '(100) of the expandable substrate is preferably 1.0 × 10 12 Pa or more, and more preferably 1.0 × 10 11 Pa or less is more preferably 1.0 × 10 10 Pa or less, and still more preferably 1.0 × 10 9 Pa or less.

又,本實施形態之黏著薄片具有之膨脹性基材含有熱膨脹性粒子作為膨脹性粒子時,其儲存模數較好滿足以下要件(2)。   ・要件(2):前述熱膨脹性粒子之膨脹開始溫度(t)下之前述膨脹性基材之儲存模數E’(t)為1.0×107 Pa以下。   藉由具有滿足要件(2)之膨脹性基材,於使熱膨脹性粒子膨脹之溫度下,膨脹性基材容易追隨熱膨脹性粒子之體積膨脹而變形,容易於黏著劑層之黏著表面形成凹凸。藉此,藉由少許外力即可自對象物剝離。In addition, when the expandable base material included in the adhesive sheet of the present embodiment contains thermally expandable particles as the expandable particles, the storage modulus preferably satisfies the following requirement (2). · Requirement (2): The storage modulus E '(t) of the expandable substrate at the expansion start temperature (t) of the thermally expandable particles is 1.0 × 10 7 Pa or less. By having an expandable substrate that satisfies the requirement (2), at a temperature at which the thermally expandable particles are expanded, the expandable substrate is easily deformed following the volume expansion of the thermally expandable particles, and it is easy to form unevenness on the adhesive surface of the adhesive layer. Thereby, it can peel from an object with a little external force.

基於上述觀點,膨脹性基材之儲存模數E’(t),較好為9.0×106 Pa以下,更好為8.0×106 Pa以下,又更好為6.0×106 Pa以下,再更好為4.0×106 Pa以下。   又,基於抑制膨脹之熱膨脹性粒子的流動,提高於黏著劑層之黏著表面所形成之凹凸之形狀維持性,更提高剝離性之觀點,膨脹性基材之儲存模數E’(t),較好為1.0×103 Pa以上,更好為1.0×104 Pa以上,又更好為1.0×105 Pa以上。Based on the above viewpoint, the storage modulus E '(t) of the expandable substrate is preferably 9.0 × 10 6 Pa or less, more preferably 8.0 × 10 6 Pa or less, and still more preferably 6.0 × 10 6 Pa or less. It is more preferably 4.0 × 10 6 Pa or less. In addition, from the viewpoint of suppressing the flow of the thermally expansible particles, improving the shape retention of the unevenness formed on the adhesive surface of the adhesive layer, and improving the peelability, the storage modulus E '(t) of the expandable substrate, It is preferably 1.0 × 10 3 Pa or more, more preferably 1.0 × 10 4 Pa or more, and still more preferably 1.0 × 10 5 Pa or more.

(黏著劑層)   本實施形態之黏著薄片具有之黏著劑層只要為包含黏著性樹脂即可,亦可根據需要,含有交聯劑、黏著賦予劑、聚合性化合物、聚合起始劑等之黏著劑用添加劑。   又,基於防止因密封步驟之加熱,而使載置之半導體晶片沉入黏著劑層之觀點,黏著劑層較好為非膨脹性黏著劑層。(Adhesive agent layer) 之 The adhesive agent layer included in the adhesive sheet according to this embodiment may include an adhesive resin, and may include an adhesive such as a cross-linking agent, an adhesion-imparting agent, a polymerizable compound, and a polymerization initiator, as required. Additives. In addition, from the viewpoint of preventing the semiconductor wafer placed on the adhesive layer from sinking due to the heating in the sealing step, the adhesive layer is preferably a non-swellable adhesive layer.

本實施形態之黏著薄片中,於23℃下之膨脹性粒子膨脹前之黏著劑層之黏著表面的黏著力較好為0.1~10.0N/25mm,更好為0.2~8.0N/25mm,又更好為0.4~6.0N/25mm,再更好為0.5~4.0 N/25mm。   該黏著力若為0.1N/25mm以上,則可於能防止密封步驟中半導體晶片之位置偏移之程度充分固定。   另一方面,該黏著力若為10.0N/25mm以下,則自黏著體剝離時,以稍許外力即可容易剝離。   又,上述黏著力意指藉由實施例中記載之方法測定之值。In the adhesive sheet of this embodiment, the adhesive force of the adhesive surface of the adhesive layer before expansion of the expandable particles at 23 ° C. is preferably 0.1 to 10.0 N / 25 mm, more preferably 0.2 to 8.0 N / 25 mm, and more It is preferably from 0.4 to 6.0 N / 25 mm, and even more preferably from 0.5 to 4.0 N / 25 mm.若 If the adhesive force is 0.1N / 25mm or more, the position of the semiconductor wafer in the sealing step can be prevented from being sufficiently fixed. On the other hand, if the adhesive force is 10.0 N / 25 mm or less, when it is peeled from the adherend, it can be easily peeled with a slight external force. In addition, the said adhesive force means the value measured by the method described in an Example.

本實施形態之黏著薄片中,作為在23℃下的黏著劑層的剪切儲存模數G’(23),較好為1.0×104 ~1.0×108 Pa,更好為5.0×104 ~5.0×107 Pa,又更好為1.0×105 ~1.0× 107 Pa。   具有複數層黏著劑層之黏著薄片時,較好半導體晶片所貼合之黏著劑層之剪切儲存模數G’(23)在上述範圍內,較好自膨脹性基材起之半導體晶片所貼合之側的黏著劑層之總剪切儲存模數G’(23)在上述範圍內。   黏著劑層的剪切儲存模數G’(23)若為1.0×104 Pa以上,則可防止半導體晶片之位置偏移,並且亦可防止半導體晶片朝黏著劑層之沉入。   另一方面,黏著劑層的剪切儲存模數G’(23)若為1.0× 108 Pa以下,則藉由膨脹性基材中之膨脹性粒子之膨脹,容易於黏著劑層表面形成凹凸,結果,以稍許力即可容易剝離。   又,本說明書中,黏著劑層的剪切儲存模數G’(23)意指藉由實施例中記載之方法測定之值。In the adhesive sheet of this embodiment, the shear storage modulus G '(23) of the adhesive layer at 23 ° C is preferably 1.0 × 10 4 to 1.0 × 10 8 Pa, and more preferably 5.0 × 10 4 ∼5.0 × 10 7 Pa, and more preferably 1.0 × 10 5 to 1.0 × 10 7 Pa. In the case of an adhesive sheet having a plurality of adhesive layers, the shear storage modulus G '(23) of the adhesive layer to which the semiconductor wafer is bonded is preferably within the above range, and the semiconductor wafer from the expandable substrate is preferred. The total shear storage modulus G '(23) of the adhesive layer on the bonding side is within the above range. If the shear storage modulus G '(23) of the adhesive layer is 1.0 × 10 4 Pa or more, the position of the semiconductor wafer can be prevented from shifting, and the semiconductor wafer can also be prevented from sinking into the adhesive layer. On the other hand, if the shear storage modulus G '(23) of the adhesive layer is 1.0 × 10 8 Pa or less, it is easy to form unevenness on the surface of the adhesive layer by the expansion of the expandable particles in the expandable substrate. As a result, it can be easily peeled with a little force. In addition, in this specification, the shear storage modulus G '(23) of an adhesive layer means the value measured by the method as described in an Example.

本實施形態之黏著薄片所具有之黏著劑層之厚度,基於展現優異黏著力之觀點,及藉由膨脹性基材中之膨脹性粒子之膨脹而容易於形成之黏著劑層表面形成凹凸之觀點,較好為1~60μm,更好為2~50μm,又更好為3~40μm,再更好為5~30μm。The thickness of the adhesive layer of the adhesive sheet of this embodiment is based on the viewpoint of exhibiting excellent adhesion, and the viewpoint that the surface of the adhesive layer that is easily formed by the expansion of the expandable particles in the expandable substrate is uneven. It is preferably 1 to 60 μm, more preferably 2 to 50 μm, still more preferably 3 to 40 μm, and still more preferably 5 to 30 μm.

本實施形態之黏著薄片中,23℃下之膨脹性基材之厚度與黏著劑層之厚度的比(膨脹性基材/黏著劑層),基於使再配線層形成面平坦並且防止半導體晶片之位置偏移之觀點,較好為0.2以上,更好為0.5以上,又更好為1.0以上,再更好為5.0以上,又,基於成為剝離時以少許力即可容易剝離之黏著薄片之觀點,較好為1000以下,更好為200以下,又更好為60以下,再更好為30以下。   黏著劑層之厚度意指基於實施例中記載之方法測定之值。In the adhesive sheet of this embodiment, the ratio of the thickness of the expandable substrate at 23 ° C to the thickness of the adhesive layer (expandable substrate / adhesive layer) is based on flattening the rewiring layer formation surface and preventing the formation of semiconductor wafers. The viewpoint of positional displacement is preferably 0.2 or more, more preferably 0.5 or more, still more preferably 1.0 or more, still more preferably 5.0 or more, and the viewpoint of being an adhesive sheet that can be easily peeled off with a little force when peeling off. It is preferably 1,000 or less, more preferably 200 or less, still more preferably 60 or less, and even more preferably 30 or less.厚度 The thickness of the adhesive layer means a value measured based on the method described in the examples.

黏著劑層可由包含黏著性樹脂之黏著劑組成物形成。   以下,針對黏著劑層之形成材料的黏著劑組成物所含之各成分加以說明。The adhesive layer may be formed of an adhesive composition containing an adhesive resin. Hereinafter, each component contained in the adhesive composition of the material for forming the adhesive layer will be described.

<黏著性樹脂>   作為本實施形態所用之黏著性樹脂,較好以該樹脂單獨即具有黏著性,且質量平均分子量(Mw)為1萬以上之聚合物。   作為本實施形態所用之黏著性樹脂之質量平均分子量(Mw),基於提高黏著力之觀點,較好為1萬~200萬,更好為2萬~150萬,又更好為3萬~100萬。<Adhesive resin> As the adhesive resin used in this embodiment, it is preferred that the resin has adhesiveness alone and a polymer having a mass average molecular weight (Mw) of 10,000 or more. The mass average molecular weight (Mw) of the adhesive resin used in this embodiment is preferably 10,000 to 2 million, more preferably 20,000 to 1.5 million, and still more preferably 30,000 to 100 from the viewpoint of improving the adhesive force. Million.

作為黏著性樹脂舉例為例如丙烯酸系樹脂、胺基甲酸酯系樹脂、聚異丁烯系樹脂等之橡膠系樹脂、聚酯系樹脂、烯烴系樹脂、矽氧系樹脂、聚乙烯醚系樹脂等。   該等黏著性樹脂可單獨使用,亦可併用2種以上。   又,該等黏著性樹脂為具有2種以上之構成單位之共聚物時,該共聚物之形態並未特別限定,可為嵌段共聚物、無規共聚物、及接枝共聚物之任一者。Examples of the adhesive resin include rubber resins such as acrylic resins, urethane resins, polyisobutylene resins, polyester resins, olefin resins, silicone resins, and polyvinyl ether resins. These adhesive resins can be used alone or in combination of two or more. When the adhesive resin is a copolymer having two or more constituent units, the form of the copolymer is not particularly limited, and may be any of a block copolymer, a random copolymer, and a graft copolymer. By.

本實施形態所用之黏著性樹脂亦可為於上述黏著性樹脂之側鏈導入聚合性官能基之能量線硬化型之黏著性樹脂。   作為該聚合性官能基舉例為(甲基)丙烯醯基、乙烯基等。   又,作為能量線舉例為紫外線、電子束等,較好為紫外線。The adhesive resin used in this embodiment may also be an energy-ray-curable adhesive resin in which a polymerizable functional group is introduced into a side chain of the adhesive resin. Examples of the polymerizable functional group include (meth) acrylic acid fluorenyl and vinyl. In addition, examples of the energy rays include ultraviolet rays and electron beams, and ultraviolet rays are preferred.

黏著性樹脂之含量,相對於黏著劑組成物之有效成分全量(100質量%),較好為30~99.99質量%,更好為40~99.95質量%,又更好為50~99.90質量%,再更好為55~99.80質量%,又再更好為60~99.50質量%。   又,本說明書之以下記載中,「相對於黏著劑組成物之有效成分全量之各成分含量」與「由該黏著劑組成物形成之黏著劑層中之各成分含量」同義。The content of the adhesive resin is preferably 30 to 99.99% by mass, more preferably 40 to 99.95% by mass, and still more preferably 50 to 99.90% by mass, relative to the total amount (100% by mass) of the active ingredient of the adhesive composition. It is more preferably 55 to 99.80% by mass, and still more preferably 60 to 99.50% by mass. In addition, in the following description of this specification, "the content of each component with respect to the total amount of active ingredients of the adhesive composition" is synonymous with "the content of each component in the adhesive layer formed from the adhesive composition".

本實施形態中,基於展現優異黏著力之觀點,及藉由加熱處理而使膨脹性基材中之膨脹性粒子之膨脹,而容易於形成之黏著劑層表面形成凹凸之觀點,黏著性樹脂較好包含丙烯酸系樹脂。   黏著性樹脂中之丙烯酸系樹脂之含有比例,相對於黏著劑組成物所含之黏著性樹脂全量(100質量%),較好為30~100質量%,更好為50~100質量%,又更好為70~100質量%,再更好為85~100質量%。In this embodiment, based on the viewpoint of exhibiting excellent adhesion and the expansion of the swellable particles in the swellable substrate by heat treatment, and the ease of forming unevenness on the surface of the formed adhesive layer, the adhesive resin is Good contains acrylic resin. The content of the acrylic resin in the adhesive resin is preferably 30 to 100% by mass, more preferably 50 to 100% by mass, relative to the total amount of the adhesive resin (100% by mass) contained in the adhesive composition. It is more preferably 70 to 100% by mass, and even more preferably 85 to 100% by mass.

[丙烯酸系樹脂]   本實施形態中,作為可使用作為黏著性樹脂之丙烯酸系樹脂,舉例為例如包含源自具有直鏈或分支鏈之烷基的(甲基)丙烯酸烷酯之構成單位的聚合物,包含源自具有環狀構造之(甲基)丙烯酸酯之構成單位之聚合物等。[Acrylic Resin] In this embodiment, as the acrylic resin that can be used as an adhesive resin, for example, polymerization of a constituent unit including an alkyl (meth) acrylate derived from an alkyl group having a linear or branched chain is exemplified. The substance includes a polymer derived from a constituent unit of a (meth) acrylate having a cyclic structure, and the like.

丙烯酸系樹脂之質量平均分子量(Mw),較好為10萬~150萬,更好為20萬~130萬,又更好為35萬~120萬,再更好為50萬~110萬。The mass average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 1.5 million, more preferably 200,000 to 1.3 million, still more preferably 350,000 to 1.2 million, and even more preferably 500,000 to 1.1 million.

作為丙烯酸系樹脂,更好為具有源自(甲基)丙烯酸烷酯(a1’)(以下亦稱為「單體(a1’)」)之構成單位(a1)及源自含官能基之單體(a2’)(以下亦稱為「單體(a2’)」)之構成單位(a2)之丙烯酸系共聚物(A1)。The acrylic resin is more preferably a structural unit (a1) derived from an alkyl (meth) acrylate (a1 ') (hereinafter also referred to as a "monomer (a1')") and a functional group-containing unit. (A2 ') (hereinafter also referred to as "monomer (a2')") as an acrylic copolymer (A1) as a constituent unit (a2).

作為單體(a1’)所具有之烷基的碳數,基於提高黏著特性之觀點,較好為1~24,更好為1~12,又更好為2~10,再更好為4~8。   又,單體(a1’)所具有之烷基可為直鏈烷基,亦可為分支鏈烷基。The number of carbon atoms of the alkyl group in the monomer (a1 ') is preferably from 1 to 24, more preferably from 1 to 12, still more preferably from 2 to 10, and even more preferably 4 from the viewpoint of improving the adhesion characteristics. ~ 8. In addition, the alkyl group possessed by the monomer (a1 ') may be a linear alkyl group or a branched alkyl group.

作為單體(a1’),舉例為例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸硬脂酯等。   該等單體(a1’)可單獨使用,亦可併用2種以上使用。   作為單體(a1’),較好為(甲基)丙烯酸丁酯及(甲基)丙烯酸2-乙基己酯。Examples of the monomer (a1 ') include, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and (meth) acrylic acid 2- Ethylhexyl ester, lauryl (meth) acrylate, tridecyl (meth) acrylate, stearyl (meth) acrylate, and the like. These monomers (a1 ') can be used alone or in combination of two or more kinds. As the monomer (a1 '), butyl (meth) acrylate and 2-ethylhexyl (meth) acrylate are preferred.

構成單位(a1)之含量,相對於丙烯酸系共聚物(A1)之全構成單位(100質量%),較好為50~99.9質量%,更好為60~99.0質量%,又更好為70~97.0質量%,再更好為80~95.0質量%。The content of the constituent unit (a1) is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass%, and even more preferably 70 to the total constituent unit (100% by mass) of the acrylic copolymer (A1). -97.0% by mass, more preferably 80-95.0% by mass.

作為單體(a2’)所具有之官能基舉例為例如羥基、羧基、胺基、環氧基等。   亦即,作為單體(a2’)舉例為例如含羥基之單體、含羧基之單體、含胺基之單體、含環氧基之單體等。   該等單體(a2’)可單獨使用,亦可併用2種以上使用。   該等中,作為單體(a2’)較好為含羥基之單體及含羧基之單體。Examples of the functional group possessed by the monomer (a2 ') include a hydroxyl group, a carboxyl group, an amine group, and an epoxy group. That is, as the monomer (a2 '), for example, a hydroxyl-containing monomer, a carboxyl-containing monomer, an amine-containing monomer, an epoxy-containing monomer, and the like are exemplified. These monomers (a2 ') can be used alone or in combination of two or more kinds. Among these, the monomer (a2 ') is preferably a hydroxyl-containing monomer and a carboxyl-containing monomer.

作為含羥基之單體舉例為例如上述之含羥基之化合物相同者。Examples of the hydroxyl-containing monomer include, for example, the same hydroxyl-containing compounds described above.

作為含羧基之單體舉例為例如(甲基)丙烯酸、巴豆酸等之乙烯性不飽和單羧酸;富馬酸、依康酸、馬來酸、檸康酸等之乙烯性不飽和二羧酸及其酸酐;水楊酸2-(丙烯醯氧基)乙酯、(甲基)丙烯酸2-羧基乙酯等。Examples of the carboxyl group-containing monomer include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid, and citraconic acid. Acids and their anhydrides; 2- (propenyloxy) ethyl salicylate, 2-carboxyethyl (meth) acrylate, and the like.

構成單位(a2)之含量,相對於丙烯酸系共聚物(A1)之全構成單位(100質量%),較好為0.1~40質量%,更好為0.5~35質量%,又更好為1.0~30質量%,再更好為3.0~25質量%。The content of the constituent unit (a2) is preferably 0.1 to 40 mass%, more preferably 0.5 to 35 mass%, and more preferably 1.0 relative to the total constituent unit (100 mass%) of the acrylic copolymer (A1). -30 mass%, more preferably 3.0-25 mass%.

丙烯酸系共聚物(A1)亦可進而具有源自單體(a1’)及(a2’)以外之其他單體(a3’)之構成單位(a3)。   又,丙烯酸系共聚物(A1)中,構成單位(a1)及(a2)之含量,相對於丙烯酸系共聚物(A1)之全構成單位(100質量%),較好為70~100質量%,更好為80~100質量%,又更好為90~100質量%,再更好為95~100質量%。The acrylic copolymer (A1) may further have a constituent unit (a3) derived from a monomer (a3 ') other than the monomers (a1') and (a2 '). The content of the constituent units (a1) and (a2) in the acrylic copolymer (A1) is preferably 70 to 100 mass% relative to the total constituent units (100% by mass) of the acrylic copolymer (A1). , More preferably 80 to 100% by mass, still more preferably 90 to 100% by mass, and still more preferably 95 to 100% by mass.

作為單體(a3’)舉例為例如乙烯、丙烯、異丁烯等之烯烴類;氯乙烯、偏氯乙烯等之鹵化烯烴類;丁二烯、異戊二烯、氯丁二烯等之二烯系單體類;(甲基)丙烯酸環己酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環戊烯氧基乙酯、(甲基)丙烯酸醯亞胺酯等之具有環狀構造之(甲基)丙烯酸酯;苯乙烯、α-甲基苯乙烯、乙烯基甲苯、甲酸乙烯酯、乙酸乙烯酯、丙烯腈、(甲基)丙烯醯胺、(甲基)丙烯腈、(甲基)丙烯醯基嗎啉、N-乙烯基吡咯啶酮等。Examples of the monomer (a3 ') include, for example, olefins such as ethylene, propylene, and isobutylene; halogenated olefins such as vinyl chloride and vinylidene chloride; and diene systems such as butadiene, isoprene, and chloroprene. Monomers; cyclohexyl (meth) acrylate, benzyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentyl (meth) acrylate, dicyclopentene (meth) acrylate (Meth) acrylates having a cyclic structure such as dicyclopentenyloxyethyl (meth) acrylate, fluorimide (meth) acrylate, and the like; styrene, α-methylstyrene, vinyl Toluene, vinyl formate, vinyl acetate, acrylonitrile, (meth) acrylamide, (meth) acrylonitrile, (meth) acrylfluorenylmorpholine, N-vinylpyrrolidone, and the like.

又,丙烯酸系共聚物(A1)亦可為於側鏈導入聚合性官能基之能量線硬化型之丙烯酸系共聚物。   作為該聚合性官能基及該能量線係如上述。   又,聚合性官能基可藉由使具有上述構成單位(a1)及(a2)之丙烯酸系共聚物與具有可與該丙烯酸系共聚物之構成單位(a2)所具有之官能基鍵結之取代基及聚合性官能基之化合物反應而導入。   作為前述化合物,舉例為例如(甲基)丙烯醯氧基乙基異氰酸酯、(甲基)丙烯醯基異氰酸酯、(甲基)丙烯酸縮水甘油酯等。The acrylic copolymer (A1) may be an energy ray-curable acrylic copolymer in which a polymerizable functional group is introduced into a side chain. As the polymerizable functional group and the energy ray system, fluorene is as described above. In addition, the polymerizable functional group may be substituted by bonding the acrylic copolymer having the above-mentioned constituent units (a1) and (a2) with a functional group having a constituent unit (a2) which can be combined with the acrylic copolymer. The compound of the group and the polymerizable functional group is introduced and reacted. As the aforementioned compound, for example, (meth) acryloxyethyl isocyanate, (meth) acrylfluorenyl isocyanate, glycidyl (meth) acrylate, and the like are exemplified.

<交聯劑>   本實施形態中,黏著劑組成物含有如上述之丙烯酸系共聚物(A1)之含有官能基之黏著性樹脂時,較好進而含有交聯劑。   該交聯劑係與具有官能基之黏著性樹脂反應,以該官能基為交聯起點,使黏著性樹脂彼此交聯者。<Crosslinking agent> 时 In the present embodiment, when the adhesive composition contains a functional group-containing adhesive resin such as the acrylic copolymer (A1) described above, it is preferable to further contain a crosslinking agent. The crosslinking agent reacts with an adhesive resin having a functional group, and uses the functional group as a starting point for crosslinking to crosslink the adhesive resins with each other.

作為交聯劑舉例為例如異氰酸酯系交聯劑、環氧系交聯劑、氮丙啶系交聯劑、金屬螯合劑系交聯劑等。   該等交聯劑可單獨使用,亦可併用2種以上。   該等交聯劑中,基於提高凝集力,提高黏著力之觀點,及取得容易性等之觀點,較好為異氰酸酯系交聯劑。Examples of the crosslinking agent include, for example, an isocyanate-based crosslinking agent, an epoxy-based crosslinking agent, an aziridine-based crosslinking agent, and a metal chelating agent-based crosslinking agent. These crosslinking agents can be used alone or in combination of two or more. Among these crosslinking agents, an isocyanate-based crosslinking agent is preferred from the viewpoints of improving the cohesive force, improving the adhesive force, and the ease of obtaining.

交聯劑含量,可藉由黏著性樹脂具有之官能基數而適當調整,但相對於具有官能基之黏著性樹脂100質量份,較好為0.01~10質量份,更好為0.03~7質量份,又更好為0.05~5質量份。The content of the crosslinking agent can be appropriately adjusted by the number of functional groups of the adhesive resin, but it is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass relative to 100 parts by mass of the adhesive resin having functional groups. And more preferably 0.05 to 5 parts by mass.

<黏著賦予劑>   本實施形態中,基於更提高黏著力之觀點,黏著劑組成物較好進而含有黏著賦予劑。   本說明書中,所謂「黏著賦予劑」係輔助提高上述黏著性樹脂之黏著力的成分,係指質量平均分子量(Mw)未滿1萬之寡聚物,係與上述黏著性樹脂有所區別者。   黏著賦予劑之質量平均分子量(Mw)較好為400~10000,更好為500~8000,又更好為800~5000。<Adhesion imparting agent> 中 In this embodiment, from the viewpoint of further improving the adhesive force, the adhesive composition is better and further contains an adhesion imparting agent. In the present specification, the "adhesive imparting agent" refers to a component that assists in improving the adhesion of the above-mentioned adhesive resin, and refers to an oligomer having a mass average molecular weight (Mw) of less than 10,000, and is different from the above-mentioned adhesive resin. . The mass average molecular weight (Mw) of the tackifier is preferably 400 to 10,000, more preferably 500 to 8000, and still more preferably 800 to 5000.

作為黏著賦予劑舉例為例如松脂系樹脂、萜烯系樹脂、苯乙烯系樹脂、石油腦之熱分解所生成之戊烯、異戊二烯、胡椒鹼、1,3-戊二烯等之C5餾分共聚合所得之C5系石油樹脂、石油腦之熱分解所生成之茚、乙烯基甲苯等之C9餾分共聚合所得之C9系石油樹脂及使該等氫化之氫化樹脂等。Examples of the adhesion-imparting agent include, for example, C5 such as turpentine resin, terpene resin, styrene resin, pentene produced by thermal decomposition of petroleum brain, isoprene, piperine, and 1,3-pentadiene. C5 based petroleum resins obtained by copolymerization of fractions, C9 based petroleum resins obtained by copolymerization of C9 fractions such as indene, vinyltoluene, etc. produced by thermal decomposition of petroleum brain, and hydrogenated resins such as those hydrogenated.

黏著賦予劑之軟化點較好為60~170℃,更好為65~160℃,又更好為70~150℃。   又,本說明書中,黏著賦予劑之「軟化點」係指依據JIS K 2531測定之值。   黏著賦予劑可單獨使用,亦可併用軟化點、構造等不同之2種以上。   而且,使用2種以上之複數黏著賦予劑時,該等複數黏著賦予劑之軟化點之加權平均較好屬於上述範圍。The softening point of the adhesion-imparting agent is preferably 60 to 170 ° C, more preferably 65 to 160 ° C, and even more preferably 70 to 150 ° C. In this specification, the "softening point" of the adhesion-imparting agent refers to a value measured in accordance with JIS K 2531. The adhesion-imparting agent can be used alone or in combination of two or more different softening points and structures. When two or more types of plural adhesion-imparting agents are used, the weighted average of the softening points of the plural adhesion-imparting agents preferably falls within the above range.

黏著賦予劑之含量,相對於黏著劑組成物中有效成分全量(100質量%),較好為0.01~65質量%,更好為0.05~55質量%,又更好為0.1~50質量%,再更好為0.5~45質量%,又再更好為1.0~40質量%。The content of the adhesion-imparting agent is preferably 0.01 to 65% by mass, more preferably 0.05 to 55% by mass, and still more preferably 0.1 to 50% by mass, relative to the total amount (100% by mass) of the active ingredient in the adhesive composition. More preferably, it is 0.5 to 45% by mass, and still more preferably 1.0 to 40% by mass.

<光聚合起始劑>   本實施形態中,黏著劑組成物包含能量線硬化型之黏著性樹脂作為黏著性樹脂時,較好進而含有光聚合起始劑。   藉由成為含有能量線硬化型之黏著性樹脂及光聚合起始劑之黏著劑組成物,自該黏著劑組成物形成之黏著劑層即使以比較低能量之能量線照射,亦可進行充分之硬化反應,可將黏著力調整至所期望之範圍。   又,作為光聚合起始劑,舉例為調配於上述無溶劑型樹脂組成物(y1)者相同者。<Photopolymerization initiator> 时 In the present embodiment, when the adhesive composition contains an energy ray-curable adhesive resin as the adhesive resin, it is preferable to further contain a photopolymerization initiator. By forming an adhesive composition containing an energy ray-curable adhesive resin and a photopolymerization initiator, the adhesive layer formed from the adhesive composition can be sufficiently irradiated even with relatively low energy energy rays. The hardening reaction can adjust the adhesion to the desired range. In addition, as the photopolymerization initiator, for example, the same as those formulated in the solventless resin composition (y1).

光聚合起始劑之含量,相對於能量線硬化型之黏著性樹脂100質量份,較好為0.01~10質量份,更好為0.03~5質量份,又更好為0.05~2質量份。The content of the photopolymerization initiator is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and still more preferably 0.05 to 2 parts by mass with respect to 100 parts by mass of the energy ray-curable adhesive resin.

<黏著劑用添加劑>   本實施形態中,黏著劑層之形成材料的黏著劑組成物,在不損及本發明效果之範圍內,除上述添加劑以外,亦可含有一般黏著劑所使用之黏著劑用添加劑。   作為該黏著劑用添加劑舉例為例如抗氧化劑、軟化劑(可塑劑)、防鏽劑、顏料、染料、延遲劑、反應促進劑(觸媒)、紫外線吸收劑等。   又,該等黏著劑用添加劑各可單獨使用,亦可併用2種以上。<Additives for Adhesives> 中 In this embodiment, the adhesive composition of the material for forming the adhesive layer does not impair the effects of the present invention. In addition to the additives described above, the adhesives used for general adhesives may also be included. With additives. Examples of the additives for the adhesive include antioxidants, softeners (plasticizers), rust inhibitors, pigments, dyes, retarders, reaction accelerators (catalysts), and ultraviolet absorbers. In addition, each of these adhesive additives can be used alone or in combination of two or more.

含有該等黏著劑用添加劑時,各黏著劑用添加劑之含量,相對黏著性樹脂100質量份,較好為0.0001~20質量份,更好為0.001~10質量份。When such an additive for an adhesive is contained, the content of each additive for the adhesive is preferably 0.0001 to 20 parts by mass, and more preferably 0.001 to 10 parts by mass relative to 100 parts by mass of the adhesive resin.

黏著劑層之形成材料的黏著劑組成物,在不損及本發明效果之範圍內,亦可含有膨脹性粒子。   惟,如上述,本實施形態之黏著薄片具有之黏著劑層較好為非膨脹性黏著劑層。因此,該黏著劑層之形成材料的黏著劑組成物中膨脹性粒子之含量越極力減少越佳。   膨脹性粒子之含量,相對於黏著劑組成物之有效成分全量(100質量%),較好為未滿5質量%,更好為未滿1質量%,又更好為未滿0.1質量%,再更好為未滿0.01質量%,特佳為未滿0.001質量%。The pressure-sensitive adhesive composition of the material for forming the pressure-sensitive adhesive layer may contain swellable particles as long as the effect of the present invention is not impaired. However, as described above, the adhesive layer included in the adhesive sheet of this embodiment is preferably a non-swellable adhesive layer. Therefore, it is better that the content of the expandable particles in the adhesive composition of the material forming the adhesive layer is reduced as much as possible. The content of the swellable particles is preferably less than 5% by mass, more preferably less than 1% by mass, and even more preferably less than 0.1% by mass, relative to the total amount (100% by mass) of the active ingredient of the adhesive composition. More preferably, it is less than 0.01% by mass, and particularly preferably, it is less than 0.001% by mass.

(剝離材)   如圖1(B)之黏著薄片10a所示,本實施形態之黏著薄片可於黏著劑層之黏著表面進而具有剝離材。   作為剝離材,係使用雙面經剝離處理之剝離薄片、或單面經剝離處理之剝離薄片等,舉例為於剝離材用之基材上塗佈剝離劑者等。(Release material) As shown in the adhesive sheet 10a of FIG. 1 (B), the adhesive sheet of this embodiment may have a release material on the adhesive surface of the adhesive layer. (2) As a release material, a release sheet with a double-sided release treatment or a release sheet with a single-side release treatment is used, and examples include a case where a release agent is applied to a substrate for the release material.

作為剝離材用之基材,舉例為例如上等紙、玻璃紙、牛皮紙等之紙類;聚對苯二甲酸乙二酯樹脂、聚對苯二甲酸丁二酯樹脂、聚萘二甲酸乙二酯樹脂等之聚酯樹脂膜,聚丙烯樹脂、聚乙烯樹脂等之烯烴樹脂膜等之塑膠膜;等。Examples of the substrate for the release material include papers such as fine paper, cellophane, and kraft paper; polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate Polyester resin films such as resin, plastic films such as olefin resin films such as polypropylene resin and polyethylene resin; etc.

作為剝離劑舉例為例如矽氧系樹脂、烯烴系樹脂、異戊二烯系樹脂、丁二烯系樹脂等之橡膠系彈性體、長鏈烷基系樹脂、醇酸系樹脂、氟系樹脂等。Examples of the release agent include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins, and butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins. .

剝離材厚度並未特別限制,但較好為10~200μm,更好為25~170μm,又更好為35~80μm。The thickness of the release material is not particularly limited, but is preferably 10 to 200 μm, more preferably 25 to 170 μm, and still more preferably 35 to 80 μm.

[黏著薄片之製造方法]   本實施形態之黏著薄片之製造方法並未特別限制,舉例為具有下述步驟(1a)及(2a)之製造方法(a)。   ・步驟(1a):於剝離材之剝離處理面上,塗佈膨脹性基材之形成材料的樹脂組成物(y)形成塗膜,使該塗膜乾燥或UV硬化後,形成膨脹性基材之步驟。   ・步驟(2a):於形成之前述膨脹性基材之表面上,塗佈黏著劑層之形成材料的黏著劑組成物形成塗膜,使該塗膜乾燥形成黏著劑層之步驟。[Manufacturing method of adhesive sheet] The manufacturing method of the adhesive sheet of this embodiment is not particularly limited, and it is exemplified by the manufacturing method (a) having the following steps (1a) and (2a).・ Step (1a): The resin composition (y) of the forming material of the expandable substrate is coated on the release-treated surface of the release material to form a coating film, and the coating film is dried or UV-cured to form an expandable substrate. The steps.步骤 Step (2a): A step of forming a coating film by applying an adhesive composition of an adhesive layer-forming material on the surface of the aforementioned swellable substrate, and drying the coating film to form an adhesive layer.

又,作為本實施形態之黏著薄片之另一製造方法舉例為具有下述步驟(1b)~(3b)之製造方法(b)。   ・步驟(1b):於剝離材的剝離處理面上,塗佈膨脹性基材之形成材料的樹脂組成物(y)形成塗膜,使該塗膜乾燥或UV硬化後,形成膨脹性基材之步驟。   ・步驟(2b):於剝離材的剝離處理面上,塗佈黏著劑層之形成材料的黏著劑組成物形成塗膜,使該塗膜乾燥形成黏著劑層之步驟。   ・步驟(3b):使步驟(1b)形成之前述膨脹性基材之表面與步驟(2b)形成之黏著劑層表面貼合之步驟。Moreover, as another example of the manufacturing method of the adhesive sheet of this embodiment, the manufacturing method (b) which has the following steps (1b)-(3b) is illustrated.・ Step (1b): The resin composition (y) of the forming material of the expandable substrate is coated on the release-treated surface of the release material to form a coating film, and the coating film is dried or UV-cured to form an expandable substrate. The steps. (2) Step (2b): A step of applying a pressure-sensitive adhesive composition of an adhesive layer forming material to a coating film on a release-treated surface of a release material, and drying the coating film to form an adhesive layer.步骤 Step (3b): a step of bonding the surface of the aforementioned expandable substrate formed in step (1b) to the surface of the adhesive layer formed in step (2b).

上述製造方法(a)及(b)中,樹脂組成物(y)及黏著劑組成物亦可進而調配稀釋溶劑,作成溶液形態。   作為塗佈方法舉例為例如旋轉塗佈法、噴霧塗佈法、棒塗佈法、刮刀塗佈法、輥塗佈法、刮板塗佈法、模嘴塗佈法、凹版塗佈法等。In the above-mentioned production methods (a) and (b), the resin composition (y) and the adhesive composition may be further prepared by diluting a solvent to form a solution. Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a doctor blade coating method, a roll coating method, a blade coating method, a die coating method, and a gravure coating method.

又,自製造方法(a)的步驟(1a)及製造方法(b)的步驟(1b)之塗膜形成膨脹性基材之乾燥或UV照射較好適當選擇不使膨脹性粒子膨脹之條件實施。例如使含有熱膨脹性粒子之樹脂組成物(y)乾燥形成膨脹性基材時,較好以乾燥溫度未滿熱膨脹性粒子的膨脹開始溫度(t)而進行。In addition, the drying or UV irradiation of the coating film-forming expandable substrate from step (1a) of manufacturing method (a) and step (1b) of manufacturing method (b) is preferably performed by appropriately selecting conditions that do not expand the expandable particles. . For example, when the resin composition (y) containing thermally expandable particles is dried to form an expandable substrate, it is preferably carried out at a temperature below the expansion start temperature (t) of the thermally expandable particles.

<本實施形態之半導體裝置之各製造步驟>   其次,針對本實施形態之半導體裝置之製造方法的各步驟加以說明。   本實施形態之半導體裝置之製造方法係使用前述黏著薄片而製造半導體裝置之方法,且具有下述步驟(1)~(4)者。   步驟(1):將形成有開口部的框構件貼合於黏著劑層的黏著表面之步驟;   步驟(2):將半導體晶片載置於在前述框構件的前述開口部露出的前述黏著劑層的黏著表面的一部分之步驟;   步驟(3):以密封材來被覆前述半導體晶片、前述框構件、與前述黏著劑層的黏著表面中的前述半導體晶片的周邊部,使該密封材硬化,得到前述半導體晶片被硬化密封材所密封而成的硬化密封體之步驟;   步驟(4):使前述膨脹性粒子膨脹,將前述黏著薄片從前述硬化密封體上剝離之步驟。   以下,邊參考圖式邊說明本實施形態之半導體裝置之製造方法的各步驟。<The steps of manufacturing the semiconductor device of the present embodiment> Next, the steps of the method of manufacturing the semiconductor device of the present embodiment will be described.方法 The method for manufacturing a semiconductor device according to this embodiment is a method for manufacturing a semiconductor device using the aforementioned adhesive sheet, and has the following steps (1) to (4). Step (1): a step of attaching a frame member having an opening portion to an adhesive surface of an adhesive layer; step (2): placing a semiconductor wafer on the adhesive layer exposed at the opening portion of the frame member A step of a part of the adhesive surface; step (3): covering the semiconductor wafer, the frame member, and the peripheral portion of the semiconductor wafer on the adhesive surface with the adhesive layer with a sealing material, and curing the sealing material to obtain A step of curing the sealed body in which the semiconductor wafer is sealed with a curing sealing material; (4) a step of expanding the expandable particles and peeling the adhesive sheet from the cured seal; Hereinafter, each step of the method for manufacturing a semiconductor device according to this embodiment will be described with reference to the drawings.

(步驟(1))   於圖2(A)中顯示說明於黏著薄片10之黏著劑層12的黏著表面12a上,貼合形成有開口部21之框構件20之步驟(1)的剖面圖。   又,黏著薄片10具有剝離材13時,預先剝離剝離材13。(Step (1)) FIG. 2 (A) is a cross-sectional view illustrating step (1) of bonding the frame member 20 having the opening 21 formed on the adhesive surface 12 a of the adhesive layer 12 of the adhesive sheet 10. When the pressure-sensitive adhesive sheet 10 includes the release material 13, the release material 13 is peeled in advance.

框構件20形成為格子狀,具有複數開口部21。   框構件20較好以具有耐熱性之材質形成。作為框構件20之材質,舉例為銅、不鏽鋼、42合金等之金屬;聚醯亞胺樹脂、聚縮醛樹脂、聚醯胺樹脂、聚碳酸酯樹脂、改質聚苯醚樹脂、聚對苯二甲酸丁二酯樹脂等之稱為工程塑膠之樹脂;玻璃環氧樹脂等之複合材料等。   框構件20之厚度tFR 為例如100μm~3mm,較好為100 μm~1mm,更好為100~500μm。框構件20之厚度tFR 若為100μm以上,則即使密封比較廣面積時亦可抑制半導體封裝之翹曲。框構件20之厚度tFR 若為3mm以下,則可防止半導體裝置之製造製程之生產性降低。   開口部21係貫通框構件20之表背面的孔。開口部21之形狀,只要可將半導體晶片CP收容於框內,則未特別限制。開口部21之孔深度亦若可收容半導體晶片CP,則未特別限制。又,本實施形態中,作為框構件20係使用具有複數開口部21者,但在達成本發明目的之情況下,亦可使用具有1個開口部之框構件。   框構件20較好為可將複數半導體晶片CP以空出一定間隔排列為複數列且複數行之矩陣狀的狀態載置於黏著表面12a者。The frame member 20 is formed in a lattice shape and has a plurality of openings 21. The frame member 20 is preferably formed of a material having heat resistance. Examples of the material of the frame member 20 include metals such as copper, stainless steel, and 42 alloy; polyimide resin, polyacetal resin, polyimide resin, polycarbonate resin, modified polyphenylene ether resin, and polyparaphenylene Butyl dicarboxylate resins are resins called engineering plastics; glass epoxy resins and other composite materials. The thickness t FR of the frame member 20 is, for example, 100 μm to 3 mm, preferably 100 μm to 1 mm, and more preferably 100 to 500 μm. If the thickness t FR of the frame member 20 is 100 μm or more, warping of the semiconductor package can be suppressed even when a relatively wide area is sealed. If the thickness t FR of the frame member 20 is 3 mm or less, it is possible to prevent a decrease in productivity of a manufacturing process of a semiconductor device. The opening 21 is a hole penetrating the front and back surfaces of the frame member 20. The shape of the opening 21 is not particularly limited as long as the semiconductor wafer CP can be housed in a frame. The depth of the hole in the opening 21 is not particularly limited as long as it can accommodate the semiconductor wafer CP. In the present embodiment, the frame member 20 is one having a plurality of openings 21, but a frame member having one opening may be used when the purpose of the present invention is achieved. The frame member 20 is preferably one in which a plurality of semiconductor wafers CP can be arranged in a matrix state with a plurality of rows and a plurality of rows arranged at a certain interval on the adhesive surface 12a.

(步驟(2))   圖2(B)中顯示說明於在框構件20之開口部21露出之黏著劑層12的黏著表面12a之一部分載置半導體晶片CP之步驟(2)的剖面圖。   半導體晶片CP可使用以往習知者。半導體晶片CP係於其電路面W1上形成由電晶體、電阻、電容器等之電路元件構成之積體電路。   半導體晶片CP以例如其電路面W1經黏著表面12a覆蓋之方式載置。半導體晶片CP之載置可使用覆晶黏合機、晶粒黏合機等之習知裝置。   半導體晶片CP之配置佈局、配置數等只要根據目的之封裝形態、生產數等適當決定即可。   本文中,本實施形態之半導體裝置之製造方法係將如FOWLP、FOPLP等之半導體晶片CP於比晶片尺寸大的區域由密封材覆蓋,而可較好地應用於不僅於半導體晶片CP之電路面W1,亦於密封材的表面區域形成再配線層之封裝。因此,半導體晶片CP係載置於自框構件20之開口部21露出之黏著劑層12的黏著表面12a之一部分者,且較好半導體晶片CP係以與包圍半導體晶片CP之框構件20空出一定間隔載置。半導體晶片CP與框構件20之間隔只要根據目的之封裝形態等適當決定即可。   半導體晶片CP藉由載置於自框構件20之開口部21露出之黏著劑層12的黏著表面12a之一部分,而形成黏著劑層12之黏著表面12a中之半導體晶片CP之周邊部30。圖2(B)中,所謂半導體晶片CP之周邊部30係相當於半導體晶片CP與框構件20之間隙的黏著劑層12之黏著表面12a。(Step (2)) FIG. 2 (B) is a sectional view illustrating a step (2) of mounting the semiconductor wafer CP on a part of the adhesive surface 12a of the adhesive layer 12 exposed on the opening 21 of the frame member 20. As the semiconductor wafer CP, a conventionally known one can be used. The semiconductor wafer CP is formed on its circuit surface W1 as an integrated circuit composed of circuit elements such as a transistor, a resistor, and a capacitor. The semiconductor wafer CP is mounted such that the circuit surface W1 thereof is covered by the adhesive surface 12a. The semiconductor wafer CP can be mounted using a conventional device such as a flip chip bonding machine, a die bonding machine, and the like.配置 The layout and number of semiconductor chip CPs need only be appropriately determined according to the intended package form and production number. Here, the manufacturing method of the semiconductor device of this embodiment mode is to cover a semiconductor wafer CP such as FOWLP, FOPLP, etc. in a region larger than the wafer size with a sealing material, and can be applied to not only the circuit surface of the semiconductor wafer CP W1 also forms a rewiring layer package on the surface area of the sealing material. Therefore, the semiconductor wafer CP is placed on a part of the adhesive surface 12a of the adhesive layer 12 exposed from the opening 21 of the frame member 20, and the semiconductor wafer CP is preferably vacated with the frame member 20 surrounding the semiconductor wafer CP. Placed at regular intervals. The distance between the semiconductor wafer CP and the frame member 20 may be appropriately determined according to the intended packaging form and the like. (2) The semiconductor wafer CP forms a peripheral portion 30 of the semiconductor wafer CP in the adhesive surface 12 a of the adhesive layer 12 by being placed on a part of the adhesive surface 12 a of the adhesive layer 12 exposed from the opening 21 of the frame member 20. In FIG. 2 (B), the peripheral portion 30 of the semiconductor wafer CP is an adhesive surface 12 a corresponding to the adhesive layer 12 between the semiconductor wafer CP and the frame member 20.

(步驟(3))   圖2(C)及(D)中顯示說明於將半導體晶片CP、框構件20、與黏著劑層12之黏著表面12a中之半導體晶片CP之周邊部30以密封材40被覆,使該密封材40硬化,獲得半導體晶片CP被硬化密封材41密封之硬化密封體50的步驟(3)之剖面圖。   又,以下,有時將半導體晶片CP、框構件20、與黏著劑層12之黏著表面12a中之半導體晶片CP之周邊部30以密封材40被覆之步驟稱為「被覆步驟」,有時將使該密封材40硬化,獲得半導體晶片CP被硬化密封材41密封之硬化密封體50的步驟稱為「硬化步驟」。(Step (3)) In FIGS. 2 (C) and (D), the peripheral portion 30 of the semiconductor wafer CP described in the semiconductor wafer CP, the frame member 20, and the adhesive surface 12a of the adhesive layer 12 is illustrated with a sealing material 40. A cross-sectional view of step (3) of covering and curing the sealing material 40 to obtain a cured sealing body 50 in which the semiconductor wafer CP is sealed with the curing sealing material 41. In the following, the step of covering the semiconductor wafer CP, the frame member 20, and the peripheral portion 30 of the semiconductor wafer CP in the adhesive surface 12a with the adhesive layer 12 with the sealing material 40 is sometimes referred to as a "coating step", The step of curing the sealing material 40 to obtain a cured sealing body 50 in which the semiconductor wafer CP is sealed with the curing sealing material 41 is referred to as a "curing step".

如圖2(C)所示,於被覆步驟中,以密封材40被覆半導體晶片CP、框構件20、與黏著劑層12之黏著表面12a中之半導體晶片CP之周邊部30。密封材40係覆蓋半導體晶片CP及框構件20之露出面全體,且亦填充於半導體晶片CP與框構件20之間隙。As shown in FIG. 2 (C), in the coating step, the semiconductor wafer CP, the frame member 20, and the peripheral portion 30 of the semiconductor wafer CP in the adhesive surface 12a with the adhesive layer 12 are covered with a sealing material 40. The sealing material 40 covers the entire exposed surface of the semiconductor wafer CP and the frame member 20, and also fills the gap between the semiconductor wafer CP and the frame member 20.

密封材40係具有保護半導體晶片CP及其隨附要件免於受外部環境影響之功能。   作為密封材40並未特別限制,可自以往作為半導體密封材料使用者中,適當選擇任意者使用。   基於機械強度、耐熱性、絕緣性等之觀點,密封材40係具有硬化性者,舉例為例如熱硬化性樹脂組成物、能量線硬化性樹脂組成物等。   以下,本實施形態中,說明密封材40為熱硬化性樹脂組成物之情況。The sealing material 40 has a function of protecting the semiconductor wafer CP and its accompanying elements from the external environment. The sealing material 40 is not particularly limited, and it can be appropriately selected and used from among conventional users of semiconductor sealing materials. From the viewpoints of mechanical strength, heat resistance, insulation, and the like, the sealing material 40 is a hardening material, and examples thereof include a thermosetting resin composition, an energy ray hardening resin composition, and the like. Hereinafter, in this embodiment, a case where the sealing material 40 is a thermosetting resin composition will be described.

作為密封材40之熱硬化性樹脂組成物所含有之熱硬化性樹脂舉例為例如環氧樹脂、酚樹脂、氰酸酯樹脂等,但基於機械強度、耐熱性、絕緣性、成形性等之觀點,較好為環氧樹脂。   前述熱硬化性樹脂組成物中,除了前述熱硬化性樹脂以外,亦可根據需要,含有酚樹脂系硬化劑、胺系硬化劑等之硬化劑、硬化促進劑、氧化矽等之無機填充材、彈性體等之添加劑。   密封材40於室溫可為固形,亦可為液狀。且於室溫為固形之密封材40之形態並未特別限制,例如可為顆粒狀、薄片狀等。Examples of the thermosetting resin contained in the thermosetting resin composition of the sealing material 40 are, for example, epoxy resin, phenol resin, cyanate resin, etc., but from the viewpoints of mechanical strength, heat resistance, insulation, moldability, and the like , Preferably epoxy resin. The thermosetting resin composition may contain, in addition to the thermosetting resin, a hardener such as a phenol resin-based hardener, an amine-based hardener, a hardening accelerator, an inorganic filler such as silicon oxide, etc., as necessary. Additives such as elastomers. The sealing material 40 may be solid or liquid at room temperature. In addition, the form of the sealing material 40 that is solid at room temperature is not particularly limited, and may be, for example, granular, flake, or the like.

作為藉由密封材40被覆半導體晶片CP及其周邊部30及框構件20之方法,可自以往之應用於半導體封裝步驟之方法中適當選擇任意方法而使用,可適用例如輥層合法、真空加壓法、真空層合法、旋轉塗佈法、模嘴塗佈法、轉注成型法、壓縮成型法等。   該等方法中,通常為了提高密封材40之填充性,於被覆時加熱密封材40賦予流動性。As a method of covering the semiconductor wafer CP, its peripheral portion 30, and the frame member 20 with the sealing material 40, any method can be appropriately selected and used from the conventional methods used for semiconductor packaging steps. For example, a roll layer method and a vacuum application method can be applied. Press method, vacuum layer method, spin coating method, nozzle coating method, transfer injection molding method, compression molding method, etc. In these methods, in order to improve the filling property of the sealing material 40, the sealing material 40 is heated to provide fluidity during coating.

如圖2(D)所示,進行被覆步驟後,使密封材40硬化,獲得以硬化密封材41密封半導體晶片CP之硬化密封體50。   本文中,如上述,本實施形態所用之黏著薄片10,係含有藉由熱、能量線等而膨脹之膨脹性粒子者,於後述步驟(4)中,藉由該膨脹性粒子膨脹而使黏著表面12a與硬化密封體50之黏著力降低,而自硬化密封體50剝離黏著薄片10。因此,於被覆步驟及硬化步驟中,較好適當選擇不使膨脹性粒子膨脹之條件,被覆密封材40及硬化。   例如,於黏著薄片10所含之膨脹性粒子為熱膨脹性粒子時,被覆步驟及硬化步驟中之加熱條件(加熱溫度及加熱時間)較好為起因於熱膨脹性粒子之膨脹所致之黏著薄片10之厚度增加率為10%以下之加熱條件,更好為前述增加率為5%以下之加熱條件,又更好為前述增加率為0%之加熱條件(亦即不使熱膨脹性粒子膨脹之加熱條件)。又,黏著薄片10之厚度增加率可例如依據JIS K6783、Z1702、Z1709,使用定壓厚度測定器(TECLOCK股份有限公司製,製品名「PG-02」)測定於特定條件下之加熱前後之黏著薄片10之厚度,基於下述式計算。   厚度增加率(%)=(加熱後之厚度-加熱前之厚度)×100/加熱前之厚度   又,被覆步驟及硬化步驟可個別實施,但亦可於被覆步驟中加熱密封材40時,藉由該加熱直接使密封材40硬化。亦即,該情況下,被覆步驟及硬化步驟可同時實施。As shown in FIG. 2 (D), after the coating step is performed, the sealing material 40 is hardened to obtain a hardened sealing body 50 that seals the semiconductor wafer CP with the hardened sealing material 41. Herein, as described above, the adhesive sheet 10 used in the present embodiment is one which contains expandable particles that are expanded by heat, energy rays, and the like. In step (4) described later, the expandable particles are expanded to make the adhesive. The adhesion between the surface 12 a and the hardened sealing body 50 is reduced, and the adhesive sheet 10 is peeled from the hardened sealing body 50. Therefore, in the coating step and the hardening step, it is preferable to appropriately select conditions that do not expand the expandable particles, and to cover the sealing material 40 and harden. For example, when the expandable particles contained in the adhesive sheet 10 are thermally expandable particles, the heating conditions (heating temperature and heating time) in the coating step and the hardening step are preferably the adhesive sheet 10 caused by the expansion of the thermally expandable particles. The heating condition of the thickness increase rate of 10% or less, the heating condition of the aforementioned increase rate of 5% or less, and the heating condition of the aforementioned increase rate of 0% (that is, the heating without expanding the thermally expandable particles) condition). The thickness increase rate of the adhesive sheet 10 can be measured, for example, in accordance with JIS K6783, Z1702, Z1709 using a constant pressure thickness measuring device (manufactured by TECLOCK Co., Ltd., product name "PG-02") before and after heating under specific conditions. The thickness of the sheet 10 is calculated based on the following formula. Thickness increase rate (%) = (thickness after heating-thickness before heating) × 100 / thickness before heating. The coating step and hardening step can be implemented individually, but it can also be used to heat the sealing material 40 in the coating step. This heating directly hardens the sealing material 40. That is, in this case, the coating step and the hardening step may be performed simultaneously.

又,本實施形態中,係以使用熱硬化性樹脂組成物作為密封材40,使用熱膨脹性粒子作為膨脹性粒子之態樣進行說明,但亦可為例如密封材40為能量線硬化性樹脂組成物,膨脹性粒子為熱膨脹性粒子之態樣,亦可為密封材40為能量線硬化性樹脂組成物,膨脹性粒子為能量線膨脹性粒子之態樣,該等態樣中,被覆步驟及硬化步驟中之黏著薄片10之厚度增加率均較好滿足前述範圍。In this embodiment, a description is given of a case in which a thermosetting resin composition is used as the sealing material 40 and heat-expandable particles are used as the expandable particles. However, for example, the sealing material 40 may be an energy-ray-curable resin composition. In the case where the expandable particles are thermally expandable particles, the sealing material 40 may be an energy ray-curable resin composition, and the expandable particles are energy ray expandable particles. In these aspects, the coating step and The thickness increase rate of the adhesive sheet 10 in the hardening step all satisfies the aforementioned range.

前述被覆步驟中加熱熱硬化性樹脂組成物之溫度具體例雖亦隨使用之密封材40之種類、膨脹性粒子之種類等而異,但例如可為30~180℃,較好為50~170℃,更好為70~150℃。又,加熱時間為例如5秒~60分鐘,較好為10秒~45分鐘,更好為15秒~30分鐘。   前述被覆步驟中壓著熱硬化性樹脂組成物時,其壓著力為例如0.1~2.0MPa,更好為0.2~1.8MPa,又更好為0.3~1.6MPa。   前述被覆步驟中邊減壓邊壓著熱硬化性樹脂組成物時,其壓力為例如0.1~5.0MPa,更好為0.5~4.0MPa。   前述硬化步驟中,使密封材40硬化之溫度具體例雖亦隨使用之密封材40之種類、膨脹性粒子之種類等而異,但例如可為80~240℃,較好為90~200℃,更好為100~170℃。又,加熱時間為例如10~180分鐘,較好為20~150分鐘,更好為30~120分鐘。Although specific examples of the temperature of the heat-curable resin composition in the coating step may vary depending on the type of the sealing material 40 used and the type of the expandable particles, the temperature may be, for example, 30 to 180 ° C., and preferably 50 to 170. The temperature is preferably 70 to 150 ° C. The heating time is, for example, 5 seconds to 60 minutes, preferably 10 seconds to 45 minutes, and more preferably 15 seconds to 30 minutes. (2) When the thermosetting resin composition is pressed in the coating step, the pressing force is, for example, 0.1 to 2.0 MPa, more preferably 0.2 to 1.8 MPa, and still more preferably 0.3 to 1.6 MPa.时 When the thermosetting resin composition is pressed while reducing pressure in the coating step, the pressure is, for example, 0.1 to 5.0 MPa, and more preferably 0.5 to 4.0 MPa. Although the specific example of the temperature at which the sealing material 40 is hardened in the aforementioned hardening step varies depending on the type of the sealing material 40 used, the type of the expandable particles, etc., it may be, for example, 80 to 240 ° C, preferably 90 to 200 ° C. , More preferably 100 to 170 ° C. The heating time is, for example, 10 to 180 minutes, preferably 20 to 150 minutes, and more preferably 30 to 120 minutes.

本實施形態中,較好使用薄片狀之密封材(以下亦稱為「薄片狀密封材」)實施被覆步驟及硬化步驟。   使用薄片狀密封材之方法中,將薄片狀密封材載置為覆蓋半導體晶片CP及其周邊部30及框構件20,而使半導體晶片CP及其周邊部30及框構件20由密封材40被覆。此時,較好以使不會產生半導體晶片CP與框構件20之間隙未被密封材40填充之部分之方式,藉由真空層合機,邊適當減壓,邊加熱及壓著。減壓、加熱及壓著條件之較佳態樣如上述。隨後,使經層合之密封材40加熱硬化。硬化之溫度的較佳態樣如上述。   薄片狀密封材亦可為由聚對苯二甲酸乙二酯等之樹脂薄片支持之層合薄片。該情況下,亦可以薄片狀密封材覆蓋半導體晶片CP及其周邊部30及框構件20之方式載置層合薄片後,自密封材剝離樹脂薄片。   又,使用薄片狀密封材時,將薄片狀密封材層合後,於熱硬化步驟之前,亦可實施第1加熱加壓步驟。該第1加熱加壓步驟中,將經密封材40被覆之半導體晶片CP及黏著薄片10自兩面以板狀構件夾入,於特定溫度、時間及壓力之條件下加壓。藉由實施第1加熱加壓步驟,密封材40亦容易填充於半導體晶片CP與框構件20之空隙。且,藉由實施第1加熱加壓步驟,亦可使由密封材40構成之密封材層的凹凸平坦化。作為板狀構件,可使用例如不鏽鋼等之金屬板。In this embodiment, it is preferable to perform a coating step and a hardening step using a sheet-shaped sealing material (hereinafter also referred to as a "sheet-shaped sealing material"). In the method using a sheet-shaped sealing material, the sheet-shaped sealing material is placed so as to cover the semiconductor wafer CP and its peripheral portion 30 and the frame member 20, and the semiconductor wafer CP and its peripheral portion 30 and the frame member 20 are covered with the sealing material 40. . At this time, it is preferable that the portion where the gap between the semiconductor wafer CP and the frame member 20 is not filled with the sealing material 40 is generated by a vacuum laminator while being appropriately decompressed, heated and pressed. The preferable conditions of the reduced pressure, heating and pressing conditions are as described above. Subsequently, the laminated sealing material 40 is heat-hardened. The preferable aspect of the hardening temperature is as described above. (2) The sheet-shaped sealing material may be a laminated sheet supported by a resin sheet such as polyethylene terephthalate. In this case, after the laminated sheet is placed so that the sheet-shaped sealing material covers the semiconductor wafer CP and its peripheral portion 30 and the frame member 20, the resin sheet is peeled from the sealing material. When a sheet-shaped sealing material is used, after the sheet-shaped sealing material is laminated, the first heating and pressing step may be performed before the heat curing step. In this first heating and pressing step, the semiconductor wafer CP and the adhesive sheet 10 coated with the sealing material 40 are sandwiched by plate-shaped members from both sides, and are pressed under the conditions of a specific temperature, time, and pressure. By performing the first heating and pressing step, the gap between the semiconductor wafer CP and the frame member 20 is also easily filled with the sealing material 40. Furthermore, by performing the first heating and pressing step, the unevenness of the sealing material layer made of the sealing material 40 can also be flattened. As the plate-shaped member, a metal plate such as stainless steel can be used.

藉由步驟(3),獲得複數半導體晶片CP嵌埋於硬化密封材41之硬化密封體50。   又,後述之步驟(4)及(5)中,自硬化密封體50剝離黏著薄片10後,於露出之表面實施形成再配線層之步驟。為了提高該等步驟中之硬化密封體50之處理性,根據需要,亦可於硬化密封體50之露出之面(亦即與膨脹性基材相反側之面)上貼合補強構件。作為補強構件並未特別限定,但較好為例如玻璃環氧樹脂等之耐熱性優異之補強板,較好將補強板貼合於硬化密封體50之露出之面的全面。補強構件可經由例如接著層貼合。由於補強構件於發揮其目的之後經去除者,故接著層較好為根據需要可固定及剝離者。   補強構件之貼合可藉由例如於硬化密封體50之露出之面依序層合具有熱硬化性之接著層與補強板,進而根據需要,自補強板側及黏著薄片側的兩面分別以板狀構件夾入,於特定溫度、時間及壓力之條件下加壓之第2加熱加壓步驟而實施。第2加熱加壓步驟中,作為板狀構件亦可使用例如不鏽鋼等之金屬板。In step (3), a hardened sealing body 50 in which a plurality of semiconductor wafers CP are embedded in the hardened sealing material 41 is obtained. Furthermore, in steps (4) and (5) described later, after the adhesive sheet 10 is peeled from the hardened sealing body 50, a step of forming a rewiring layer is performed on the exposed surface. In order to improve the rationality of the hardened sealing body 50 in these steps, if necessary, a reinforcing member may be pasted on the exposed surface of the hardened sealing body 50 (that is, the surface opposite to the expandable substrate). The reinforcing member is not particularly limited, but for example, a reinforcing plate having excellent heat resistance such as glass epoxy resin is preferable, and the reinforcing plate is preferably bonded to the entire surface of the exposed surface of the hardened and sealed body 50. The reinforcing member may be bonded via, for example, an adhesive layer. Since the reinforcing member is removed after fulfilling its purpose, the adhesive layer is preferably one that can be fixed and peeled as required. For the bonding of the reinforcing member, for example, a bonding layer having a thermosetting property and a reinforcing plate may be sequentially laminated on the exposed surface of the hardened sealing body 50. Then, as needed, the two surfaces of the reinforcing plate side and the adhesive sheet side are respectively plated. The second heating and pressurizing step is carried out by sandwiching the shaped member and pressurizing under the conditions of a specific temperature, time, and pressure. In the second heating and pressing step, a metal plate such as stainless steel can also be used as the plate-like member.

(步驟(4))   圖2(E)中顯示說明膨脹性粒子膨脹,使黏著薄片10自硬化密封體50剝離之步驟(4)之剖面圖。   具體而言,膨脹性粒子根據其種類,藉由熱、能量線等膨脹,而於黏著劑層12之黏著表面12a形成凹凸,藉此,使黏著表面12a與硬化密封體50之黏著力降低,而剝離黏著薄片10。   步驟4較好藉由固定治具等固定基材11之與黏著劑層12相反側之面11a之狀態實施。藉由固定面11a,於膨脹性粒子膨脹時,可抑制於面11a側形成凹凸,藉此可於黏著劑層12之黏著表面12a側有效率地形成凹凸,獲得更優異之剝離性。   如圖2(E)所示,本實施形態中,作為前述固定治具,係使用具有複數吸附孔91之吸附台90,固定黏著薄片10之面11a。吸附台90具有例如真空泵等之減壓機構,利用該減壓機構自複數吸附孔91吸附對象物,而將對象物固定於吸附面者。(Step (4)) Fig. 2 (E) is a cross-sectional view illustrating step (4) in which the expandable particles expand and the adhesive sheet 10 is peeled from the hardened sealing body 50. Specifically, according to the type, the expandable particles expand by heat, energy rays, etc., and form irregularities on the adhesive surface 12a of the adhesive layer 12, thereby reducing the adhesive force between the adhesive surface 12a and the hardened sealing body 50. And the adhesive sheet 10 is peeled. (4) Step 4 is preferably performed in a state of a surface 11 a of the fixing base 11, such as a fixing jig, on the side opposite to the adhesive layer 12. With the fixed surface 11a, when the expandable particles are expanded, unevenness can be prevented from being formed on the surface 11a side, so that unevenness can be efficiently formed on the adhesive surface 12a side of the adhesive layer 12, and more excellent peelability can be obtained. (2) As shown in FIG. 2 (E), in this embodiment, as the aforementioned fixing jig, an adsorption table 90 having a plurality of adsorption holes 91 is used to fix the surface 11a of the adhesive sheet 10. The adsorption table 90 includes a pressure reducing mechanism such as a vacuum pump, and the object is fixed to the adsorption surface by using the pressure reducing mechanism to adsorb the object from the plurality of adsorption holes 91.

又,抑制於基材11之面11a側發生凹凸之方法,不限定於上述方法,可採用可物理性抑制於基材11之面11a側發生凹凸之任意方法。若舉其一例,則例如經由任意黏著劑層、雙面黏著薄片等將硬質支撐體貼合於面11a之方法。   硬質支撐體之材質,只要考慮機械強度、耐熱性等適當決定即可,舉例為例如SUS等之金屬材料;玻璃、矽晶圓等之非金屬無機材料;聚醯亞胺、聚醯胺醯亞胺等之樹脂材料;玻璃環氧樹脂等之複合材料等。硬質支撐體之厚度,只要考慮機械強度、處理性等適當決定即可,例如為100μm~50mm。   硬質支撐體之貼合所用之黏著劑層(以下亦稱為「第2黏著劑層」)並未特別限定,但可使用黏著劑層12之形成所用之黏著劑組成物而形成。又,第2黏著劑層亦可預先設於基材11之面11a側。又,該情況下,於第2黏著劑層之黏著表面亦可進而具有剝離材。亦即,黏著薄片10亦可具有黏著劑層12/基材11/第2黏著劑層之構成,亦可具有剝離材/黏著劑層12/基材11/第2黏著劑層/剝離材之構成。The method for suppressing unevenness on the surface 11a side of the substrate 11 is not limited to the above method, and any method for physically suppressing unevenness on the surface 11a side of the substrate 11 can be adopted. As an example, a method of bonding a hard support to the surface 11a via, for example, an arbitrary adhesive layer, a double-sided adhesive sheet, or the like. The material of the rigid support can be determined as appropriate in consideration of mechanical strength and heat resistance. Examples include metal materials such as SUS; non-metallic inorganic materials such as glass and silicon wafers; polyimide, polyimide Resin materials such as amines; composite materials such as glass epoxy resins. The thickness of the rigid support may be appropriately determined in consideration of mechanical strength, handleability, and the like, and is, for example, 100 μm to 50 mm. (2) The adhesive layer (hereinafter also referred to as a "second adhesive layer") used for bonding the rigid support is not particularly limited, but may be formed using an adhesive composition for forming the adhesive layer 12. The second adhesive layer may be provided on the surface 11 a side of the substrate 11 in advance. In this case, a release material may be further provided on the adhesive surface of the second adhesive layer. That is, the adhesive sheet 10 may have a configuration of the adhesive layer 12 / base material 11 / second adhesive layer, or may have a release material / adhesive layer 12 / base material 11 / second adhesive layer / release material. Make up.

作為使膨脹性粒子膨脹之方法,只要根據膨脹性粒子種類適當選擇即可。   膨脹性粒子為熱膨脹性粒子時,只要加熱至膨脹開始溫度(t)以上之溫度即可。此處,作為「膨脹開始溫度(t)以上之溫度」較好為「膨脹開始溫度(t)+10℃」以上「膨脹開始溫度(t)+60℃」以下,更好為「膨脹開始溫度(t)+15℃」以上「膨脹開始溫度(t)+40℃」以下。具體而言,對應於其熱膨脹性粒子之種類,加熱至例如120~250℃之範圍並膨脹即可。The method of expanding the expandable particles may be appropriately selected depending on the type of the expandable particles. (2) When the expandable particles are thermally expandable particles, they may be heated to a temperature equal to or higher than the expansion start temperature (t). Here, the "temperature above the expansion start temperature (t)" is preferably "the expansion start temperature (t) + 10 ° C" or more and the "expansion start temperature (t) + 60 ° C" or less, and more preferably the "expansion start temperature" (t) + 15 ° C "or more" Expansion start temperature (t) + 40 ° C "or less. Specifically, depending on the type of the heat-expandable particles, it may be heated to expand in a range of, for example, 120 to 250 ° C.

膨脹性粒子膨脹後,自硬化密封體50剝離黏著薄片10。本實施形態之黏著薄片10由於具有優異剝離性,故以比以往之暫時固定用薄片更小之外力即可剝離。剝離方法並未特別限定,但舉例為例如使用膠帶移除機剝離之方法。After the expandable particles expand, the adhesive sheet 10 is peeled from the hardened sealing body 50. Since the adhesive sheet 10 of this embodiment has excellent peelability, it can be peeled with a smaller external force than the conventional temporary fixing sheet. The peeling method is not particularly limited, but examples include a method of peeling using a tape remover.

本實施形態之製造方法,於步驟(4)中,於自硬化密封體50剝離黏著薄片10之前或剝離之後,根據需要,亦可包含用以將硬化密封體50厚度減薄,而研削硬化密封體50之與再配線層形成面相反側之面的步驟。In the manufacturing method of this embodiment, in step (4), before or after peeling the adhesive sheet 10 from the hardened sealing body 50, if necessary, the method may further include grinding the hardened sealing body 50 to reduce the thickness of the hardened sealing body 50, and grinding the hardened seal. The step of the body 50 on the side opposite to the redistribution layer forming surface.

(步驟(5))   本實施形態之製造方法,較好包含於經剝離雙面黏著薄片10之硬化密封體50上形成再配線層之步驟(5)。   圖3(A)顯示剝離黏著薄片10後之硬化密封體50之剖面圖。   本步驟中,於電路面W1上及相當於半導體晶片CP之區域外的硬化密封體50之面50a上形成與露出之複數半導體晶片CP之電路W2連接之再配線。(Step (5)) The manufacturing method of this embodiment preferably includes a step (5) of forming a rewiring layer on the hardened sealing body 50 of the peeled double-sided adhesive sheet 10. (FIG. 3 (A) shows a cross-sectional view of the cured sealing body 50 after the adhesive sheet 10 is peeled off. (2) In this step, rewiring is formed on the circuit surface W1 and on the surface 50a of the hardened sealing body 50 outside the area corresponding to the semiconductor wafer CP to be connected to the exposed circuits W2 of the semiconductor wafer CP.

圖3(B)係顯示說明於半導體晶片CP之電路面W1及硬化密封體50之面50a上形成第1絕緣層61之步驟的剖面圖。   包含絕緣性樹脂之第1絕緣層61於電路面W1及面50a上形成為使半導體晶片CP之電路W2或電路W2之內部端子電極W3露出。作為絕緣性樹脂舉例為聚醯亞胺樹脂、聚苯并噁唑樹脂、矽氧樹脂等。內部端子電極W3之材質若為導電性材料則未限定,舉例為金、銀、銅、鋁等之金屬、包含該等金屬之合金等。FIG. 3 (B) is a cross-sectional view illustrating a step of forming the first insulating layer 61 on the circuit surface W1 of the semiconductor wafer CP and the surface 50 a of the hardened sealing body 50. (1) The first insulating layer 61 containing an insulating resin is formed on the circuit surface W1 and the surface 50a so that the internal terminal electrode W3 of the circuit W2 or the circuit W2 of the semiconductor wafer CP is exposed. Examples of the insulating resin include polyimide resin, polybenzoxazole resin, and silicone resin. The material of the internal terminal electrode W3 is not limited as long as it is a conductive material, and examples thereof include metals such as gold, silver, copper, and aluminum, and alloys including these metals.

圖3(C)中顯示說明形成與被硬化密封體50密封之半導體晶片CP電性連接之再配線70之步驟的剖面圖。   本實施形態中,接續於第1絕緣層61之形成後形成再配線70。再配線70之材質若為導電性材料則未限定,舉例為金、銀、銅、鋁等之金屬、包含該等金屬之合金等。再配線70可藉由去除法、半添加法等之習知方法形成。FIG. 3 (C) is a cross-sectional view illustrating a step of forming a rewiring 70 electrically connected to the semiconductor wafer CP sealed with the hardened sealing body 50. In this embodiment, the rewiring 70 is formed after the formation of the first insulating layer 61. The material of the rewiring 70 is not limited as long as it is a conductive material, and examples thereof include metals such as gold, silver, copper, and aluminum, and alloys including these metals. The rewiring 70 can be formed by a conventional method such as a removal method or a semi-additive method.

圖4(A)中顯示形成被覆再配線70之第2絕緣層62之步驟的剖面圖。   再配線70具有外部端子電極用之外部電極焊墊70A。第2絕緣層62上設有開口等,使外部端子電極用之外部電極焊墊70A露出。本實施形態中,外部電極焊墊70A露出於硬化密封體50之半導體晶片CP的區域(與電路面W1對應之區域)內及區域外(與硬化密封體50上之面50a對應之區域)。且,再配線70以使外部電極焊墊70A配置為陣列狀之方式,形成於硬化密封體50之面50a上。本實施形態中,由於具有外部電極焊墊70A露出於硬化密封體50之半導體晶片CP的區域外之構造,故可獲得FOWLP或FOPLP。FIG. 4 (A) is a sectional view showing a step of forming the second insulating layer 62 of the covered rewiring 70. The rewiring 70 has an external electrode pad 70A for external terminal electrodes. An opening or the like is provided in the second insulating layer 62 to expose an external electrode pad 70A for an external terminal electrode. In this embodiment, the external electrode pad 70A is exposed in the region (the region corresponding to the circuit surface W1) and outside the region (the region corresponding to the surface 50a on the cured sealing body 50) of the semiconductor wafer CP of the cured sealing body 50. The rewiring 70 is formed on the surface 50 a of the hardened and sealed body 50 such that the external electrode pads 70A are arranged in an array. In this embodiment, since the external electrode pad 70A has a structure exposed outside the region of the semiconductor wafer CP of the hardened sealing body 50, FOWLP or FOPLP can be obtained.

(與外部端子電極之連接步驟)   圖4(B)係顯示於外部電極焊墊70A連接外部端子電極80之步驟的剖面圖。   於自第2絕緣層62露出之外部電極焊墊70A上載置焊球等之外部端子電極80,藉由焊接接合等,將外部端子電極80與外部電極焊墊70A電性連接。焊球材質並未特別限定,舉例為含鉛焊料、無鉛焊料等。(Connection step with external terminal electrode) FIG. 4 (B) is a cross-sectional view showing a step of connecting the external terminal electrode 80 to the external electrode pad 70A. An external terminal electrode 80 such as a solder ball is placed on the external electrode pad 70A exposed from the second insulating layer 62, and the external terminal electrode 80 and the external electrode pad 70A are electrically connected by soldering or the like. The material of the solder ball is not particularly limited, and examples include lead-containing solder and lead-free solder.

(切晶步驟)   圖4(C)顯示說明將連接有外部端子電極80之硬化密封體50單片化之步驟的剖面圖。   本步驟將硬化密封體50以半導體晶片CP單位單片化。使硬化密封體50單片化之方法並無特別限定,可藉由切割鋸等之切斷手段等實施。   藉由使硬化密封體50單片化,而製造半導體晶片CP單位之半導體裝置100。如上述於扇出至半導體晶片CP之區域外之外部電極焊墊70A連接有外部端子電極80之半導體裝置100係作為FOWLP、FOPLP等予以製造。(Cutting step) FIG. 4 (C) is a cross-sectional view illustrating a step of singulating the hardened sealing body 50 to which the external terminal electrode 80 is connected. In this step, the hardened sealing body 50 is singulated in units of a semiconductor wafer CP. The method of singulating the hardened sealing body 50 is not particularly limited, and can be performed by a cutting means such as a dicing saw. (2) The semiconductor device 100 in the unit of a semiconductor wafer CP is manufactured by singulating the cured sealing body 50. As described above, the semiconductor device 100 having the external terminal electrode 80 connected to the external electrode pad 70A outside the area fanned out to the semiconductor wafer CP is manufactured as FOWLP, FOPLP, or the like.

(安裝步驟)   本實施形態中較好亦包含將單片化之半導體裝置100安裝於印刷配線基板等之步驟。 [實施例](Mounting Step) The present embodiment preferably includes a step of mounting the single-chip semiconductor device 100 on a printed wiring board or the like. [Example]

本發明中,藉由以下實施例具體加以說明,但本發明並非限定於以下實施例者。又,以下之製造例及實施例中之物性值係藉由以下方法測定之值。In the present invention, the following examples will be specifically described, but the present invention is not limited to the following examples. The physical properties in the following production examples and examples are values measured by the following methods.

<質量平均分子量(Mw)>   使用凝膠滲透層析裝置(TOSOH股份有限公司製,製品名「HLC-8020」),於下述條件下測定,使用以標準聚苯乙烯換算所測定之值。 (測定條件)   ・管柱:「TSK保護管柱HXL-L」「TSK gel G2500HXL」「TSK gel G2000HXL」「TSK gel G1000HXL」(均為TOSOH股份有限公司製)依序連結者。   ・管柱溫度:40℃   ・展開溶劑:四氫呋喃   ・流速:1.0mL/分鐘<Mass average molecular weight (Mw)> 测定 Measured under the following conditions using a gel permeation chromatography device (manufactured by TOSOH Co., Ltd., product name "HLC-8020"), using values measured in terms of standard polystyrene conversion. (Measurement conditions) 管 Columns: "TSK protection column HXL-L", "TSK gel G2500HXL", "TSK gel G2000HXL", and "TSK gel G1000HXL" (all manufactured by TOSOH Corporation) are connected in order. • Column temperature: 40 ° C 展开 • Development solvent: Tetrahydrofuran 流速 • Flow rate: 1.0mL / min

<各層厚度之測定>   使用TECLOCK股份有限公司製之定壓厚度測定器(型號:「PG-02J」,標準規格:依據JIS K6783、Z1702、Z1709)測定。<Measurement of Thickness of Each Layer> 测定 Measured using a constant pressure thickness measuring device (model: "PG-02J", standard specification: JIS K6783, Z1702, Z1709) manufactured by TECLOCK Corporation.

<熱膨脹性粒子之平均粒徑(D50 )、90%粒徑(D90 )>   使用雷射繞射式粒度分佈測定裝置(例如Malvern公司製,製品名「Mastersizer 3000」),測定23℃下之膨脹前之熱膨脹性粒子的粒子分佈。   接著,將自粒子分佈之粒徑較小者起計算之累積體積頻度相當於50%及90%之粒徑分別設為「熱膨脹性粒子之平均粒徑(D50 )」及「熱膨脹性粒子之90%粒徑(D90 )」。<Average particle diameter (D 50 ), 90% particle diameter (D 90 ) of thermally expandable particles> Using a laser diffraction particle size distribution measuring device (for example, product name "Mastersizer 3000" manufactured by Malvern), measured at 23 ° C. Particle distribution of thermally expandable particles before expansion. Next, the particle diameters whose cumulative volume frequency is 50% and 90% calculated from the smaller particle diameters are set as "average particle diameter of thermally expandable particles (D 50 )" and "average particle diameter of thermally expandable particles" 90% particle size (D 90 ) ".

<膨脹性基材之儲存模數E’>   於測定對象為非黏著性之膨脹性基材時,將該膨脹性基材作成縱5mm×橫30mm×厚200μm之大小,將去除剝離材者作為試驗樣品。   使用動態黏彈性測定裝置(TA Instrument公司製,製品名「DMAQ800」),以試驗開始溫度0℃、試驗結束溫度300℃、升溫速度3℃/分鐘,振動數1Hz、振幅20μm之條件,測定特定溫度下之該試驗樣品之儲存模數E’。<Storage modulus E 'of the expandable substrate> When the measurement object is a non-adhesive expandable substrate, the expandable substrate is made into a size of 5 mm in length × 30 mm in width × 200 μm in thickness. Test samples. Using a dynamic viscoelasticity measuring device (manufactured by TA Instrument, product name "DMAQ800"), specific conditions were measured under conditions of a test start temperature of 0 ° C, a test end temperature of 300 ° C, a temperature increase rate of 3 ° C / min, a vibration number of 1 Hz, and an amplitude of 20 μm. The storage modulus E 'of the test sample at temperature.

<黏著劑層之剪切儲存模數G’、膨脹性黏著劑層之儲存模數E’>   於測定對象為具有黏著性之膨脹性黏著劑層及黏著劑層時,將該膨脹性黏著劑層及黏著劑層作成直徑8mm×厚3mm,將去除剝離材者作為試驗樣品。   使用黏彈性測定裝置(Anton Paar公司製,裝置名「MCR300」),以試驗開始溫度0℃、試驗結束溫度300℃、升溫速度3℃/分鐘,振動數1Hz之條件,藉由擰剪斷法測定於特定溫度下之試驗樣品之剪切儲存模數G’。   接著,基於所測定之剪切儲存模數G’之值,自近似式「E’=3G’」算出儲存模數E’之值。<Shear storage modulus G 'of the adhesive layer and storage modulus E' of the expansive adhesive layer> When the measurement object is an expansive adhesive layer and an adhesive layer having adhesiveness, the expansive adhesive The layer and the adhesive layer were prepared to have a diameter of 8 mm × thickness of 3 mm, and the peeled material was removed as a test sample. Using a viscoelasticity measuring device (manufactured by Anton Paar, device name "MCR300"), the conditions of a test start temperature of 0 ° C, a test end temperature of 300 ° C, a temperature increase rate of 3 ° C / min, and a vibration frequency of 1Hz were performed by a twist-shear method The shear storage modulus G 'of a test sample at a specific temperature is determined. Next, based on the measured value of the shear storage modulus G ', the value of the storage modulus E' is calculated from the approximate expression "E '= 3G'".

<探針黏性值>   將成為測定對象之膨脹性基材或膨脹性黏著劑層切斷為一邊10mm之正方形後,於23℃、50%RH(相對濕度)之環境下靜置24小時,將去除輕剝離膜者作為試驗樣品。   前述試驗樣品於23℃、50%RH(相對濕度)之環境下,使用TACKING試驗機(日本特殊測器股份有限公司製,製品名「NTS-4800」),依據JIS Z0237:1991測定經去除輕剝離膜而露出之前述試驗樣品表面之探針黏性值。   具體而言,將直徑5mm之不鏽鋼製之探針以1秒、接觸荷重0.98N/cm2 接觸試驗樣品之表面後,測定該探針以10mm/秒之速度,自試驗樣品表面離開時之必要力。接著,將該測定值作為該試驗樣品之探針黏性值。<Probe viscosity value> After cutting the expansive substrate or the expansive adhesive layer to be measured into a square of 10 mm on one side, it is left to stand in an environment of 23 ° C and 50% RH (relative humidity) for 24 hours. A lightly peeled film was removed as a test sample. The aforementioned test sample was measured at 23 ° C and 50% RH (relative humidity) using a TACKING tester (manufactured by Japan Special Instrument Co., Ltd., product name "NTS-4800"). The probe viscosity value of the surface of the test sample exposed by peeling the film. Specifically, a probe made of stainless steel with a diameter of 5 mm was brought into contact with the surface of the test sample at a contact load of 0.98 N / cm 2 for 1 second, and then it was necessary to measure the probe at a speed of 10 mm / second to leave the surface of the test sample. force. Then, the measured value is used as the probe viscosity of the test sample.

以下製造例所使用之黏著性樹脂、添加劑、熱膨脹性粒子及剝離材之細節如以下。 <黏著性樹脂>   ・丙烯酸系共聚物(i):含有具有源自丙烯酸2-乙基己酯(2EHA)/丙烯酸2-羥基乙酯(HEA)=80.0/20.0(質量比)所成之原料單體之構成單位的質量平均分子量(Mw)60萬之丙烯酸系共聚物之溶液。稀釋溶劑:乙酸乙酯,固形分濃度:40質量%。   ・丙烯酸系共聚物(ii):含有具有源自丙烯酸正丁酯(BA)/甲基丙烯酸甲酯(MMA)/丙烯酸2-羥基乙酯(HEA)/丙烯酸=86.0/8.0/5.0/1.0(質量比)所成之原料單體之構成單位的質量平均分子量(Mw)60萬之丙烯酸系共聚物之溶液。稀釋溶劑:乙酸乙酯,固形分濃度:40質量%。 <添加劑>   ・異氰酸酯交聯劑(i):TOSOH股份有限公司製,製品名「Coronate L」,固形分濃度:75質量%。   ・光聚合起始劑(i):BASF公司製,製品名「IRGACURE 184」,1-羥基-環己基-苯基酮。 <熱膨脹性粒子>   ・熱膨脹性粒子(i):KURARAY股份有限公司製,製品名「S2640」,膨脹開始溫度(t)=208℃,平均粒徑(D50 )= 24μm,90%粒徑(D90 )=49μm。 <剝離材>   ・重剝離膜:LINTEK股份有限公司製,製品名「SP-PET382150」,於聚對苯二甲酸乙二酯(PET)膜之單面,設置由矽氧系剝離劑所形成之剝離劑層者,厚:38μm。   ・輕剝離膜:LINTEK股份有限公司製,製品名「SP-PET381031」,於PET膜之單面,設置由矽氧系剝離劑所形成之剝離劑層者,厚:38μm。Details of the adhesive resin, additives, heat-expandable particles, and release materials used in the following production examples are as follows. <Adhesive Resin>-Acrylic copolymer (i): contains raw materials derived from 2-ethylhexyl acrylate (2EHA) / 2-hydroxyethyl acrylate (HEA) = 80.0 / 20.0 (mass ratio) A solution of an acrylic copolymer having a mass average molecular weight (Mw) of 600,000 constituting units of the monomer. Diluted solvent: ethyl acetate, solid content concentration: 40% by mass.・ Acrylic copolymer (ii): containing n-butyl acrylate (BA) / methyl methacrylate (MMA) / 2-hydroxyethyl acrylate (HEA) / acrylic acid = 86.0 / 8.0 / 5.0 / 1.0 ( Mass ratio) A solution of an acrylic copolymer having a mass average molecular weight (Mw) of 600,000 constituting units of the raw material monomers. Diluted solvent: ethyl acetate, solid content concentration: 40% by mass. <Additives>-Isocyanate crosslinking agent (i): manufactured by TOSOH Corporation, product name "Coronate L", solid content concentration: 75% by mass. -Photopolymerization initiator (i): manufactured by BASF, product name "IRGACURE 184", 1-hydroxy-cyclohexyl-phenyl ketone. <Thermally expandable particles> ・ Thermally expandable particles (i): Product name "S2640" manufactured by Kuraray Co., Ltd., expansion start temperature (t) = 208 ° C, average particle diameter (D 50 ) = 24 μm, 90% particle diameter D 90 ) = 49 μm. <Release material> ・ Heavy release film: manufactured by LINTEK Corporation, product name "SP-PET382150", a silicone terephthalate (PET) film is provided on one side with a silicone-based release agent For the release agent layer, the thickness is 38 μm.・ Light release film: manufactured by LINTEK Co., Ltd. under the product name "SP-PET381031". One side of the PET film is provided with a release agent layer made of a silicone-based release agent. Thickness: 38 μm.

製造例1(黏著劑層(X)之形成)   於黏著性樹脂的上述丙烯酸系共聚物(i)之固形分100質量份中,調配上述異氰酸酯系交聯劑(i)5.0質量份(固形分比),以甲苯稀釋,均一攪拌,調製固形分濃度(有效成分濃度)25質量%之組成物(x-1)。   接著,於上述重剝離膜之剝離劑層之表面上,塗佈所調製之組成物(x-1)形成塗膜,使該塗膜於100℃乾燥60秒,形成厚度10μm之黏著劑層(X)。   又,23℃下之黏著劑層(X)的剪切儲存模數G’(23)為2.5×105 Pa。Production Example 1 (Formation of Adhesive Layer (X)) In 100 parts by mass of the solid content of the acrylic copolymer (i) of the adhesive resin, 5.0 parts by mass of the isocyanate-based crosslinking agent (i) (solid content) Ratio), diluted with toluene and uniformly stirred to prepare a composition (x-1) having a solid content concentration (active ingredient concentration) of 25% by mass. Next, the prepared composition (x-1) was coated on the surface of the release agent layer of the heavy release film to form a coating film, and the coating film was dried at 100 ° C. for 60 seconds to form an adhesive layer having a thickness of 10 μm ( X). The shear storage modulus G '(23) of the adhesive layer (X) at 23 ° C was 2.5 × 10 5 Pa.

製造例2(膨脹性基材(Y-1)之形成) (1)組成物(y-1)之調製   於使酯型二醇與異佛爾酮二異氰酸酯(IPDI)反應所得之末端異氰酸酯胺甲酸酯預聚物,與丙烯酸2-羥基乙酯反應,獲得質量平均分子量(Mw)5000之2官能丙烯酸胺基甲酸酯系寡聚物。   接著,於上述合成之丙烯酸胺基甲酸酯系寡聚物40質量%(固形分比)中,調配作為能量線聚合性單體之丙烯酸異冰片酯(IBXA)40質量%(固形分比)及丙烯酸苯基羥基丙酯(HPPA)20質量%(固形分比),相對於丙烯酸胺基甲酸酯系寡聚物及能量線聚合性單體之全量100質量份,進而調配作為光聚合起始劑之1-羥基環己基苯基酮(BASF公司製,製品名「IRGACURE 184」)2.0質量份(固形分比)及作為添加劑之酞青系顏料0.2質量份(固形分比),調製能量線硬化性組成物。   接著,於該能量線硬化性組成物中調配上述熱膨脹性粒子(i),調製不含溶劑之無溶劑型之組成物(y-1)。   又,相對於組成物(y-1)之全量(100質量%)之熱膨脹性粒子(i)之含量為20質量%。Production Example 2 (Formation of Swellable Substrate (Y-1)) (1) Composition (y-1) was prepared from terminal isocyanate amine obtained by reacting an ester diol with isophorone diisocyanate (IPDI) The formate prepolymer reacts with 2-hydroxyethyl acrylate to obtain a bifunctional acrylic urethane-based oligomer having a mass average molecular weight (Mw) of 5,000. Next, 40% by mass (solid content ratio) of isobornyl acrylate (IBXA) as an energy ray polymerizable monomer is prepared in 40% by mass (solid content ratio) of the acrylic urethane-based oligomer synthesized above. And 20% by mass (solid content ratio) of phenylhydroxypropyl acrylate (HPPA), 100 parts by mass of the total amount of the acrylic urethane-based oligomer and the energy ray polymerizable monomer, and further formulated as photopolymerization 2.0 parts by mass (solid content ratio) of 1-hydroxycyclohexylphenyl ketone (manufactured by BASF, product name "IRGACURE 184") and 0.2 parts by mass (solid content ratio) of phthalocyanine pigment as an additive to adjust energy Wire-curable composition. Next, the heat-expandable particles (i) are blended in the energy ray-curable composition to prepare a solvent-free composition (y-1) containing no solvent. In addition, the content of the thermally expandable particles (i) with respect to the total amount (100% by mass) of the composition (y-1) was 20% by mass.

(2)膨脹性基材(Y-1)之形成   於上述輕剝離膜之剝離劑層表面上,塗佈所調製之組成物(y-1)形成塗膜。   接著,使用紫外線照射裝置(EYEGRAPHICS公司製,製品名「ECS-401GX」)及高壓水銀燈(EYEGRAPHICS公司製,製品名「H04-L41」),以照度160mW/cm2 、光量500mJ/cm2 之條件照射紫外線,使該塗膜硬化,形成厚度50μm之膨脹性基材(Y-1)。又,紫外線照射時之上述照度及光量係使用照度・光量計(EIT公司製,製品名「UV Power Puck II」)測定之值。(2) The expandable substrate (Y-1) is formed on the surface of the release agent layer of the light release film, and the prepared composition (y-1) is applied to form a coating film. Next, using an ultraviolet irradiation device (manufactured by EYEGRAPHICS Corporation, product name "ECS-401GX") and a high-pressure mercury lamp (manufactured by EYEGRAPHICS Corporation, product name "H04-L41"), the conditions were as follows: an illumination intensity of 160 mW / cm 2 and a light amount of 500 mJ / cm 2 The coating film was hardened by irradiating ultraviolet rays to form an expandable substrate (Y-1) having a thickness of 50 μm. In addition, the said illuminance and light quantity at the time of ultraviolet irradiation are the values measured using the illuminance and light quantity meter (made by EIT company, product name "UV Power Puck II").

製造例3(膨脹性基材(Y-2)之形成) (1)胺基甲酸酯預聚物之合成   於氮氣環境下之反應容器內,相對於質量平均分子量(Mw)1,000之碳酸酯型二醇100質量份(固形分比),以碳酸酯型二醇之羥基與異佛爾酮二異氰酸酯(IPDI)之異氰酸酯基之當量比成為1/1之方式調配異佛爾酮二異氰酸酯,進而添加甲苯160質量份,於氮氣環境下,邊攪拌邊於80℃反應6小時以上直至異氰酸酯基濃度達到理論量。   其次,添加將甲基丙烯酸2-乙基己酯(2-HEMA)1.44質量份(固形分比)稀釋於甲苯30質量份之溶液,進而於80℃反應6小時直至兩末端之異氰酸酯基消失,獲得質量平均分子量(Mw)2.9萬之胺基甲酸酯預聚物。Production Example 3 (Formation of Swellable Substrate (Y-2)) (1) Synthesis of Urethane Prepolymer In a reaction vessel under a nitrogen atmosphere, a carbonate having a mass average molecular weight (Mw) of 1,000 100 parts by mass (solid content ratio) of an isophorone diisocyanate, and isophorone diisocyanate is formulated so that the equivalent ratio of the hydroxyl group of the carbonate diol to the isocyanate group of isophorone diisocyanate (IPDI) becomes 1/1, Further, 160 parts by mass of toluene was added, and the reaction was performed at 80 ° C. for more than 6 hours under stirring in a nitrogen environment until the isocyanate group concentration reached a theoretical amount. Next, a solution of 1.44 parts by mass (solid content ratio) of 2-ethylhexyl methacrylate (2-HEMA) diluted in 30 parts by mass of toluene was added, and further reacted at 80 ° C for 6 hours until the isocyanate groups at both ends disappeared. A urethane prepolymer having a mass average molecular weight (Mw) of 29,000 was obtained.

(2)丙烯酸胺基甲酸酯系樹脂之合成   於氮氣環境下之反應容器內,添加上述(1)所得之胺基甲酸酯預聚物100質量份(固形分比)、甲基丙烯酸甲酯(MMA)117質量份(固形分比)、丙烯酸2-乙基己酯(2-HEMA)5.1質量份(固形分比)、1-硫代甘醇1.1質量份(固形分比)及甲苯50質量份,邊攪拌邊升溫至105℃。   接著,於反應容器內,進而將自由基起始劑(日本Finechem股份有限公司製,製品名「ABN-E」)2.2質量份(固形分比)以甲苯210質量份稀釋之溶液,維持於105℃之狀態歷時4小時予以滴加。   滴加結束後,於105℃反應6小時,獲得質量平均分子量(Mw)10.5萬之丙烯酸胺基甲酸酯系樹脂之溶液。(2) Synthesis of acrylic urethane resin In a reaction vessel under a nitrogen atmosphere, 100 parts by mass of the urethane prepolymer obtained in (1) (solid content ratio) and methyl methacrylate were added. 117 parts by mass (solid content), 5.1 parts by mass of 2-ethylhexyl acrylate (2-HEMA) (solid content), 1.1 parts by mass of 1-thioglycol (solid content), and toluene 50 parts by mass, the temperature was raised to 105 ° C while stirring. Next, in a reaction container, a solution of 2.2 parts by mass (solid content ratio) of a radical initiator (manufactured by Japan Finechem Co., Ltd., "ABN-E") was diluted with 210 parts by mass of toluene, and maintained at 105. The state at ℃ was added dropwise over 4 hours. After the completion of the dropwise addition, the mixture was reacted at 105 ° C. for 6 hours to obtain a solution of an acrylic urethane resin having a mass average molecular weight (Mw) of 105,000.

(3)膨脹性基材(Y-2)之形成   對於上述(2)所得之丙烯酸胺基甲酸酯系樹脂之溶液之固形分100質量份,調配上述異氰酸酯系交聯劑(i)6.3質量份(固形分比)、作為觸媒之二辛基錫雙(2-乙基己酸酯)1.4質量份(固形分比)及上述熱膨脹性粒子(i),以甲苯稀釋,均一攪拌,調製固形分濃度(有效成分濃度)30質量%之組成物(y-2)。   又,相對於所得組成物(y-2)中之有效成分全量(100質量%)的熱膨脹性粒子(i)之含量為20質量%。   接著,於上述輕剝離膜之剝離劑層之表面上,塗佈所調製之組成物(y-2)形成塗膜,該塗膜於100℃乾燥120秒,形成厚度50μm之膨脹性基材(Y-2)。(3) Formation of swellable substrate (Y-2): 100 parts by mass of the solid content of the solution of the acrylic urethane resin obtained in the above (2), and 6.3 parts by mass of the isocyanate-based crosslinking agent (i) (Solid fraction), 1.4 parts by mass (solid fraction) of dioctyltinbis (2-ethylhexanoate) as a catalyst, and the thermally expandable particles (i), diluted with toluene, uniformly stirred, and prepared The composition (y-2) having a solid content concentration (active ingredient concentration) of 30% by mass. In addition, the content of the thermally expandable particles (i) with respect to the total amount (100% by mass) of the active ingredient in the obtained composition (y-2) was 20% by mass. Next, the prepared composition (y-2) was coated on the surface of the release agent layer of the light release film to form a coating film, and the coating film was dried at 100 ° C. for 120 seconds to form a 50 μm thick expandable substrate ( Y-2).

製造例4(膨脹性黏著劑層(Y-3)之形成)   於黏著性樹脂的上述丙烯酸系共聚物(ii)之固形分100質量份中,調配上述異氰酸酯系交聯劑(i)6.3質量份(固形分比)及上述熱膨脹性粒子(i),以甲苯稀釋,均一攪拌,調製固形分濃度(有效成分濃度)30質量%之組成物(y-3)。   又,相對於所得組成物(y-3)中之有效成分全量(100質量%)的熱膨脹性粒子(i)之含量為20質量%。   接著,於上述輕剝離膜之剝離劑層之表面上,塗佈所調製之組成物(y-3)形成塗膜,該塗膜於100℃乾燥120秒,形成厚度50μm之膨脹性黏著劑層(Y-3)。Production Example 4 (Formation of Intumescent Adhesive Layer (Y-3)) In 100 parts by mass of the solid content of the acrylic copolymer (ii) contained in an adhesive resin, 6.3 mass of the isocyanate-based crosslinking agent (i) was blended. (Solid content ratio) and the thermally expandable particles (i), diluted with toluene, and uniformly stirred to prepare a composition (y-3) having a solid content concentration (effective component concentration) of 30% by mass. In addition, the content of the thermally expandable particles (i) with respect to the entire amount (100% by mass) of the active ingredient in the obtained composition (y-3) was 20% by mass. Next, the prepared composition (y-3) was coated on the surface of the release agent layer of the light release film to form a coating film, and the coating film was dried at 100 ° C. for 120 seconds to form a 50 μm thick expandable adhesive layer. (Y-3).

針對製造例2~3所形成之膨脹性基材(Y-1)~(Y-2)及製造例4所形成之膨脹性黏著劑層(Y-3),基於上述方法,分別測定23℃、100℃及使用之熱膨脹性粒子之膨脹開始溫度的208℃之儲存模數E’及探針黏性值。該等結果示於表1。The expandable base materials (Y-1) to (Y-2) formed in Production Examples 2 to 3 and the expandable adhesive layer (Y-3) formed in Production Example 4 were measured at 23 ° C based on the methods described above. Storage modulus E 'and probe viscosity at 100 ° C and 208 ° C of the expansion start temperature of the thermally expandable particles used. These results are shown in Table 1.

實施例1   將製造例1形成之黏著劑層(X)與製造例2形成之膨脹性基材(Y-1)之表面彼此貼合,製作依序層合輕剝離膜/膨脹性基材(Y-1)/黏著劑層(X)/重剝離膜之黏著薄片(1)。Example 1 The surface of the adhesive layer (X) formed in Production Example 1 and the surface of the expandable substrate (Y-1) formed in Production Example 2 were bonded to each other to produce a sequentially laminated light release film / expandable substrate ( Y-1) / adhesive layer (X) / adhesive sheet (1) of heavy release film.

實施例2   除了膨脹性基材(Y-1)替代為製造例3形成之膨脹性基材(Y-2)以外,與實施例1同樣,製作依序層合輕剝離膜/膨脹性基材(Y-2)/黏著劑層(X)/重剝離膜之黏著薄片(2)。Example 2 In the same manner as in Example 1 except that the intumescent substrate (Y-1) was replaced with the intumescent substrate (Y-2) formed in Production Example 3, a sequentially laminated light release film / expandable substrate was produced. (Y-2) / adhesive layer (X) / adhesive sheet (2) of the heavy release film.

比較例1   除了膨脹性基材(Y-1)替代為製造例4形成之膨脹性黏著劑層(Y-3)以外,與實施例1同樣,製作依序層合輕剝離膜/膨脹性黏著劑層(Y-3)/黏著劑層(X)/重剝離膜之黏著薄片(3)。Comparative Example 1 Except that the intumescent base material (Y-1) was replaced with the intumescent adhesive layer (Y-3) formed in Production Example 4, the same procedure as in Example 1 was followed to produce a laminated light release film / expandable adhesive. Agent layer (Y-3) / adhesive layer (X) / adhesive sheet (3) of heavy release film.

比較例2   製造例4形成之輕剝離膜/膨脹性黏著劑層(Y-3)直接作為黏著薄片(4)使用。Comparative Example 2 The light release film / expandable adhesive layer (Y-3) formed in Production Example 4 was used as the adhesive sheet (4) as it was.

且,針對所製作之黏著薄片(1)~(4),進行以下測定。該等結果示於表2。The following measurements were performed on the produced adhesive sheets (1) to (4). These results are shown in Table 2.

<密封步驟時之半導體晶片之位置偏移評價>   自黏著薄片(1)~(3)剝離重剝離膜,露出黏著劑層(X)。於黏著薄片(1)~(3)之黏著劑層(X)及黏著薄片(4)之膨脹性黏著劑層(Y-3)之黏著表面上,貼合具有特定數的10mm×10mm之開口部的銅製框構件。   接著,自黏著薄片(1)~(4)去除輕剝離膜,使露出之膨脹性基材或膨脹性黏著劑層固定於如圖2(E)所示之具有複數吸附孔之吸附台的吸附面上。   其次,於前述複數開口部露出之黏著表面上,以該黏著表面與半導體晶片之電路面接觸之方式,與框構件空出必要間隔載置9個半導體晶片(晶片尺寸6.4mm×6.4mm,晶片厚200μm(#2000))。   隨後,於黏著表面、框構件及半導體晶片上層合密封用樹脂膜(密封材),使用真空加熱加壓層合機(ROHM and HAAS公司製之「7024HP5」),以密封材被覆黏著表面、框構件及半導體晶片,並且使密封材硬化,製作硬化密封體。又,密封條件如下述。   ・預熱溫度:台及隔板均為100℃   ・抽真空:60秒   ・動態壓製模式:30秒   ・靜態壓製模式:10秒   ・密封溫度:180℃(比熱膨脹性粒子之膨脹開始溫度的208℃低的溫度)   ・密封時間:60分鐘<Evaluation of the position shift of the semiconductor wafer during the sealing step> (1) The self-adhesive sheets (1) to (3) were peeled off from the heavy release film to expose the adhesive layer (X). On the adhesive surface of the adhesive layer (X) of the adhesive sheet (1) to (3) and the expandable adhesive layer (Y-3) of the adhesive sheet (4), a specific number of openings of 10 mm × 10 mm are attached. Part of the copper frame member. Next, the light release film is removed from the adhesive sheets (1) to (4), and the exposed expandable substrate or the expandable adhesive layer is fixed to the adsorption of an adsorption table having a plurality of adsorption holes as shown in FIG. 2 (E). Surface. Next, 9 semiconductor wafers (wafer size: 6.4 mm x 6.4 mm, wafer) are placed on the adhesive surface exposed by the plurality of openings in such a manner that the adhesive surface is in contact with the circuit surface of the semiconductor wafer with a necessary interval from the frame member. 200 μm thick (# 2000)). Subsequently, a sealing resin film (sealing material) was laminated on the adhesion surface, the frame member, and the semiconductor wafer, and a vacuum heating and pressure laminator ("7024HP5" manufactured by ROHM and HAAS) was used to cover the adhesion surface and the frame with the sealing material. A member and a semiconductor wafer are hardened, and a hardened sealing body is produced. The sealing conditions are as follows.・ Preheating temperature: 100 ° C for both table and partitions. Evacuation: 60 seconds. Dynamic pressing mode: 30 seconds. Static pressing mode: 10 seconds. Sealing temperature: 180 ° C. ℃ low temperature) · Sealing time: 60 minutes

密封後,將黏著薄片(1)~(4)於熱膨脹性粒子之膨脹開始溫度(208℃)以上之240℃加熱3分鐘,自黏著薄片(1)~(4)分離該硬化密封體,以目視及顯微鏡觀察經分離之硬化密封體表面(再配線層形成面)之半導體晶片,確認半導體晶片有無位置偏移,藉以下基準進行評價。   ・A:未確認到發生較密封前位置偏移25μm以上之半導體晶片。   ・F:確認到發生較密封前位置偏移25μm以上之半導體晶片。After sealing, the adhesive sheets (1) to (4) are heated at 240 ° C above the expansion expansion temperature (208 ° C) of the thermally expandable particles for 3 minutes, and the hardened sealing body is separated from the adhesive sheets (1) to (4) to The semiconductor wafer on the surface (rewiring layer formation surface) of the separated hardened sealing body was observed visually and with a microscope, and the presence or absence of the positional deviation of the semiconductor wafer was confirmed. The evaluation was performed on the basis of the following criteria.・ A: No semiconductor wafer with a position deviation of 25 μm or more from the position before sealing was observed.・ F: It was confirmed that a semiconductor wafer with a position deviation of 25 μm or more from the position before sealing was generated.

<密封步驟後之半導體晶片側之表面平坦性評價>   使用黏著薄片(1)~(4),以與上述「密封步驟時之半導體晶片之位置偏移評價」同樣順序,製作硬化密封體,並與黏著薄片分離。   使用接觸式表面粗糙度計(三豐公司製「SV3000」),對所製作之硬化密封體之各半導體晶片側之表面(再配線層形成面)測定階差,由以下基準進行評價。   ・A:未確認到發生2μm以上階差之部位。   ・F:確認到發生2μm以上階差之部位。<Evaluation of the surface flatness of the semiconductor wafer side after the sealing step> Use the adhesive sheets (1) to (4) to prepare a hardened sealing body in the same procedure as in the above-mentioned "evaluation of the position deviation of the semiconductor wafer during the sealing step", and Separated from the adhesive sheet. Using a contact-type surface roughness meter ("SV3000" manufactured by Mitutoyo Corporation), the step (rewiring layer formation surface) of each semiconductor wafer side of the produced hardened and sealed body was measured for step differences and evaluated based on the following criteria.・ A: A part where a step of 2 μm or more has not been confirmed.・ F: A part where a step of 2 μm or more is confirmed.

<加熱前後之黏著薄片之黏著力測定>   準備去除黏著薄片(1)~(3)之重剝離膜者與黏著薄片(4),分別將黏著劑層(X)或膨脹性黏著劑層(Y-3)貼附於黏著體之不鏽鋼板(SUS304 360號研磨),於23℃、50%RH (相對濕度)環境下,靜置24小時者作為試驗樣品。   接著,使用上述試驗樣品,於23℃、50%RH(相對濕度)環境下,基於JIS Z0237:2000,藉由180°剝離法,以拉伸速度300mm/分鐘,測定於23℃下之黏著力。   又,將上述試驗樣品於加熱板上,於成為熱膨脹性粒子之膨脹開始溫度(208℃)以上之240℃下加熱3分鐘,於標準環境(23℃、50%RH(相對濕度))靜置60分鐘後,基於JIS Z0237:2000,藉由180°剝離法,以拉伸速度300mm/分鐘,測定於膨脹開始溫度以上加熱後之黏著力。   又,於無法貼附於黏著體之不鏽鋼板而難以測定黏著力時,稱為「無法測定」,其黏著力為0(N/25mm)。<Measurement of the adhesive force of the adhesive sheet before and after heating> The person who intends to remove the heavy peeling film of the adhesive sheets (1) to (3) and the adhesive sheet (4), respectively, the adhesive layer (X) or the expandable adhesive layer (Y -3) A stainless steel plate (SUS304 360 grinded) attached to an adherend, and left at room temperature for 24 hours at 23 ° C and 50% RH (relative humidity) as a test sample. Next, using the test sample described above, the adhesive force at 23 ° C was measured at 23 ° C and 50% RH (relative humidity) based on JIS Z0237: 2000 by a 180 ° peeling method at a tensile speed of 300 mm / min. . In addition, the test sample was heated on a hot plate at 240 ° C or higher for the expansion start temperature (208 ° C) of the thermally expandable particles for 3 minutes, and left to stand in a standard environment (23 ° C, 50% RH (relative humidity)). After 60 minutes, based on JIS Z0237: 2000, the adhesive force after heating above the expansion start temperature was measured at a stretching speed of 300 mm / min by a 180 ° peeling method. In addition, when it is difficult to measure the adhesive force when the stainless steel plate cannot be attached to the adherend, it is called "impossible measurement", and the adhesive force is 0 (N / 25mm).

由表2可知,依據使用實施例1及2之黏著薄片(1)及(2)之製造方法,密封步驟時之加熱時,由於半導體晶片之沉入抑制效果高,故未見到半導體晶片之位置偏移,密封步驟後之半導體晶片側之表面(再配線層形成面)亦平坦。   且,黏著薄片(1)及(2)於加熱前雖具有良好黏著力,但於膨脹開始溫度以上加熱後黏著力降低至無法測定之程度,故證實為剝離時僅以少許力即可容易剝離之結果。As can be seen from Table 2, according to the manufacturing method using the adhesive sheets (1) and (2) of Examples 1 and 2, during the heating in the sealing step, the sinking effect of the semiconductor wafer was high, so no semiconductor wafer was seen. The position is shifted, and the surface (rewiring layer formation surface) on the semiconductor wafer side after the sealing step is also flat. In addition, although the adhesive sheets (1) and (2) had good adhesive force before heating, the adhesive force was reduced to an unmeasurable level after heating above the expansion starting temperature, so it was confirmed that it can be easily peeled off with a little force when peeling. The result.

另一方面,比較例1之黏著薄片(3)及比較例2之黏著薄片(4)並非膨脹性基材,由於具有膨脹性黏著劑層,故於密封步驟時之加熱時,發生半導體晶片之沉入,見到半導體晶片之位置偏移,且,於密封步驟後之半導體晶片側之表面(再配線層形成面)見到階差。因此,認為不適用於製造例如FOWLP及FOPLP時之密封步驟中之使用。On the other hand, the adhesive sheet (3) of Comparative Example 1 and the adhesive sheet (4) of Comparative Example 2 are not swellable substrates, and because they have a swellable adhesive layer, the semiconductor wafer may be heated during the sealing step. When sinking, the position of the semiconductor wafer was seen to be shifted, and a step was seen on the surface (rewiring layer formation surface) of the semiconductor wafer side after the sealing step. Therefore, it is considered to be unsuitable for use in the sealing step when manufacturing, for example, FOWLP and FOPLP.

10‧‧‧雙面黏著薄片10‧‧‧ double-sided adhesive sheet

11‧‧‧基材11‧‧‧ Substrate

11a‧‧‧面11a‧‧‧ surface

12‧‧‧黏著劑層12‧‧‧ Adhesive layer

12a‧‧‧黏著表面12a‧‧‧ Adhesive surface

13‧‧‧剝離材13‧‧‧ peeling material

20‧‧‧框構件20‧‧‧Frame components

21‧‧‧開口部21‧‧‧ opening

30‧‧‧黏著劑層之黏著表面中之半導體晶片周邊部30‧‧‧ Peripheral portion of the semiconductor wafer in the adhesive surface of the adhesive layer

40‧‧‧密封材40‧‧‧sealing material

41‧‧‧硬化密封材41‧‧‧hardened sealing material

50‧‧‧硬化密封體50‧‧‧hardened seal

50a‧‧‧面50a‧‧‧ surface

61‧‧‧第1絕緣層61‧‧‧The first insulation layer

62‧‧‧第2絕緣層62‧‧‧Second insulation layer

70‧‧‧再配線70‧‧‧ rewiring

70A‧‧‧外部電極焊墊70A‧‧‧External electrode pad

80‧‧‧外部端子電極80‧‧‧ external terminal electrode

90‧‧‧吸附台90‧‧‧ Adsorption Station

91‧‧‧吸附孔91‧‧‧ adsorption hole

100‧‧‧半導體裝置100‧‧‧ semiconductor device

CP‧‧‧半導體晶片CP‧‧‧Semiconductor wafer

W1‧‧‧電路面W1‧‧‧Circuit Surface

W2‧‧‧電路W2‧‧‧Circuit

W3‧‧‧內部端子電極W3‧‧‧Internal terminal electrode

圖1係顯示本實施形態之黏著薄片之構成的一例之黏著薄片之剖面圖。   圖2係說明本實施形態之製造方法的一例之剖面圖。   圖3係說明接續圖2之本實施形態之製造方法的一例之剖面圖。   圖4係說明接續圖3之本實施形態之製造方法的一例之剖面圖。FIG. 1 is a cross-sectional view of an adhesive sheet showing an example of the configuration of the adhesive sheet in this embodiment. FIG. 2 is a cross-sectional view illustrating an example of a manufacturing method according to this embodiment. FIG. 3 is a cross-sectional view illustrating an example of the manufacturing method of the embodiment following FIG. 2. FIG. 4 is a cross-sectional view illustrating an example of the manufacturing method of the embodiment following FIG. 3.

Claims (11)

一種半導體裝置之製造方法,其係使用黏著薄片來製造半導體裝置之方法,該黏著薄片具有:黏著劑層、與包含膨脹性粒子且為非黏著性的基材,   具有下述步驟(1)~(4),   步驟(1):將形成有開口部的框構件貼合於黏著劑層的黏著表面之步驟;   步驟(2):將半導體晶片載置於在前述框構件的前述開口部露出的前述黏著劑層的黏著表面的一部分之步驟;   步驟(3):以密封材來被覆前述半導體晶片、前述框構件、與前述黏著劑層的黏著表面中的前述半導體晶片的周邊部,使該密封材硬化,得到前述半導體晶片被硬化密封材所密封而成的硬化密封體之步驟;   步驟(4):使前述膨脹性粒子膨脹,將前述黏著薄片從前述硬化密封體上剝離之步驟。A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device using an adhesive sheet having an adhesive layer and a non-adhesive substrate containing expandable particles, and having the following steps (1) to (4), Step (1): a step of bonding a frame member having an opening portion to an adhesive surface of an adhesive layer; step (2): placing a semiconductor wafer on the exposed portion of the frame member A step of a part of the adhesive surface of the adhesive layer; step (3): covering the semiconductor wafer, the frame member, and the peripheral portion of the semiconductor wafer on the adhesive surface of the adhesive layer with a sealing material to seal the peripheral portion of the semiconductor wafer A step of obtaining a hardened sealed body in which the semiconductor wafer is sealed by a hardened sealing material; (4) a step of expanding the expandable particles and peeling the adhesive sheet from the hardened sealed body. 如請求項1記載之半導體裝置之製造方法,其中,進一步具有下述步驟(5),   步驟(5):對前述黏著薄片為經剝離的硬化密封體形成再配線層之步驟。The method for manufacturing a semiconductor device according to claim 1, further comprising the following steps (5) and (5): a step of forming a rewiring layer on the adhesive sheet as a peeled hardened sealing body. 如請求項1或2記載之半導體裝置之製造方法,其中,前述膨脹性粒子為熱膨脹性粒子,前述步驟(4)係藉由將前述黏著薄片進行加熱,使前述熱膨脹性粒子膨脹來將前述黏著薄片從前述硬化密封體上剝離之步驟。The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the expandable particles are thermally expandable particles, and the step (4) is to heat the adhesive sheet to expand the thermally expandable particles to adhere the adhesive. The step of peeling the sheet from the hardened sealing body. 如請求項3記載之半導體裝置之製造方法,其中,前述熱膨脹性粒子的膨脹開始溫度(t)為120~250℃。The method for manufacturing a semiconductor device according to claim 3, wherein the expansion start temperature (t) of the thermally expandable particles is 120 to 250 ° C. 如請求項4記載之半導體裝置之製造方法,其中,前述基材滿足下述要件(1)~(2),   要件(1):在100℃下的前述基材的儲存模數E’(100)為2.0×105 Pa以上;   要件(2):在前述熱膨脹性粒子的膨脹開始溫度(t)下的前述基材的儲存模數E’(t)為1.0×107 Pa以下。The method for manufacturing a semiconductor device according to claim 4, wherein the substrate satisfies the following requirements (1) to (2), and requirement (1): the storage modulus E '(100 of the substrate at 100 ° C) ) Is 2.0 × 10 5 Pa or more; Requirement (2): The storage modulus E ′ (t) of the substrate at the expansion start temperature (t) of the thermally expandable particles is 1.0 × 10 7 Pa or less. 如請求項1~5中任一項記載之黏著薄片,其中,前述膨脹性粒子在23℃下的膨脹前的平均粒徑為3~100μm。The adhesive sheet according to any one of claims 1 to 5, wherein the average particle diameter of the expandable particles before expansion at 23 ° C is 3 to 100 µm. 如請求項1~6中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述黏著材層的剪切儲存模數G’(23)為1.0×104 ~1.0×108 Pa。The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the shear storage modulus G '(23) of the adhesive layer at 23 ° C is 1.0 × 10 4 to 1.0 × 10 8 Pa. 如請求項1~7中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述基材的厚度、與前述黏著劑層的厚度之比(基材/黏著劑層)為0.2以上。The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the ratio of the thickness of the substrate at 23 ° C to the thickness of the adhesive layer (substrate / adhesive layer) is 0.2. the above. 如請求項1~8中任一項記載之半導體裝置之製造方法,其中,在23℃下的前述基材的厚度為10~1000μm,前述黏著劑層的厚度為1~60μm。The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein the thickness of the substrate at 23 ° C is 10 to 1000 µm, and the thickness of the adhesive layer is 1 to 60 µm. 如請求項1~9中任一項記載之半導體裝置之製造方法,其中,前述基材的表面的探針黏性值為未滿50mN/5mmφ。The method for manufacturing a semiconductor device according to any one of claims 1 to 9, wherein the probe viscosity value on the surface of the substrate is less than 50 mN / 5 mmφ. 一種黏著薄片,其係於請求項1~10中任一項記載之半導體裝置之製造方法中所使用的黏著薄片,依序具有:黏著劑層、與包含膨脹性粒子且為非黏著性的基材。An adhesive sheet is an adhesive sheet used in the method for manufacturing a semiconductor device according to any one of claims 1 to 10, and has an adhesive layer and a non-adhesive base containing an expandable particle in this order. material.
TW107111208A 2017-03-31 2018-03-30 Manufacturing method of semiconductor device and adhesive sheet TWI773747B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017073239 2017-03-31
JP2017-073239 2017-03-31

Publications (2)

Publication Number Publication Date
TW201842596A true TW201842596A (en) 2018-12-01
TWI773747B TWI773747B (en) 2022-08-11

Family

ID=63676481

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107111208A TWI773747B (en) 2017-03-31 2018-03-30 Manufacturing method of semiconductor device and adhesive sheet

Country Status (5)

Country Link
JP (1) JP6761116B2 (en)
KR (1) KR102453451B1 (en)
CN (1) CN110462816B (en)
TW (1) TWI773747B (en)
WO (1) WO2018181767A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11745299B2 (en) 2018-12-20 2023-09-05 Okamoto Machine Tool Works, Ltd. Grinding method of composite substrate including resin and grinding apparatus thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113366080B (en) * 2019-01-31 2023-12-26 琳得科株式会社 Wafer expanding method and method for manufacturing semiconductor device
WO2023032163A1 (en) 2021-09-03 2023-03-09 株式会社レゾナック Method for producing semiconductor device, provisional fixation material, and application of provisional fixation material for production of semiconductor device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS594853B2 (en) 1981-02-23 1984-02-01 株式会社日立製作所 semiconductor equipment
JP2000248240A (en) * 1999-03-01 2000-09-12 Nitto Denko Corp Heat-releasable adhesive sheet
US7214424B2 (en) * 1999-03-01 2007-05-08 Nitto Denko Corporation Heat-peelable pressure-sensitive adhesive sheet
KR101016081B1 (en) * 2002-07-26 2011-02-17 닛토덴코 가부시키가이샤 Adhesive sheet and method for making the sheet, method for using the sheet, and multilayer sheet used in the adhesive sheet and method for making the same
JP2006291137A (en) * 2005-04-14 2006-10-26 Nitto Denko Cs System Kk Pressure sensitive adhesive tape and method for using the same
JP2009040930A (en) * 2007-08-10 2009-02-26 Nitto Denko Corp Method for peeling adherend, and heat-peeling-type adhesive sheet to be used in the method
JP5128575B2 (en) * 2009-12-04 2013-01-23 リンテック株式会社 Stealth dicing adhesive sheet and method for manufacturing semiconductor device
KR101083959B1 (en) * 2010-02-01 2011-11-16 닛토덴코 가부시키가이샤 Film for producing semiconductor device and process for producing semiconductor device
JP2012167177A (en) * 2011-02-14 2012-09-06 Nitto Denko Corp Heat-resistant adhesive tape for manufacturing semiconductor device, and method for manufacturing semiconductor chip using the same
CN103650123A (en) * 2011-07-15 2014-03-19 日东电工株式会社 Method for manufacturing electronic component and adhesive sheet used in method for manufacturing electronic component
WO2013114956A1 (en) * 2012-01-30 2013-08-08 日東電工株式会社 Stretchable thermal-release adhesive sheet
CN105051137A (en) * 2013-03-15 2015-11-11 日东电工株式会社 Adhesive sheet
US9813737B2 (en) 2013-09-19 2017-11-07 Blackberry Limited Transposing a block of transform coefficients, based upon an intra-prediction mode
US9396999B2 (en) * 2014-07-01 2016-07-19 Freescale Semiconductor, Inc. Wafer level packaging method
WO2016076131A1 (en) * 2014-11-13 2016-05-19 Dic株式会社 Double-sided adhesive tape, article, and separation method
KR102444374B1 (en) * 2015-02-06 2022-09-16 에이지씨 가부시키가이샤 Film, method for producing same, and method for producing semiconductor element using film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11745299B2 (en) 2018-12-20 2023-09-05 Okamoto Machine Tool Works, Ltd. Grinding method of composite substrate including resin and grinding apparatus thereof
TWI822931B (en) * 2018-12-20 2023-11-21 日商岡本工作機械製作所股份有限公司 Grinding method of composite substrate including resin and grinding apparatus thereof

Also Published As

Publication number Publication date
JPWO2018181767A1 (en) 2020-02-06
JP6761116B2 (en) 2020-09-23
CN110462816B (en) 2023-09-19
KR102453451B1 (en) 2022-10-12
TWI773747B (en) 2022-08-11
CN110462816A (en) 2019-11-15
KR20190132386A (en) 2019-11-27
WO2018181767A1 (en) 2018-10-04

Similar Documents

Publication Publication Date Title
TWI773746B (en) adhesive sheet
TWI771521B (en) Manufacturing method of semiconductor device
TWI760469B (en) Manufacturing method of semiconductor device and double-sided adhesive sheet
TWI783021B (en) Heat peeling method for processing inspection objects
TWI773747B (en) Manufacturing method of semiconductor device and adhesive sheet
TWI774745B (en) adhesive sheet
TWI791719B (en) Adhesive laminate, method of manufacturing object to be processed with resin film, and method of manufacturing hardened package with cured resin film
TW201942282A (en) Multilayer body for preventing warp of cured sealed body and method for producing cured sealed body
TWI816796B (en) Manufacturing method of hardened sealing body
TWI821214B (en) Semiconductor device manufacturing method