TW201841298A - Substrate carrier for vacuum processing device and method of manufacturing same can ensure the material layer to have more uniform thickness by directly coating multilayered insulating material layers and the electrode layers on the base - Google Patents

Abstract

The invention provides a substrate carrier for vacuum processing device. The substrate carrier comprises a base, in which a through hole disposed in the base has an insulating tube, a high-voltage direct current conductive component disposed in the insulating tube and having a conductive cap and a conductive rod on an upper end thereof, wherein the conductive rod is below the conductive cap to electrically connected to the conductive cap and surrounded by the insulating tube; a first insulating material layer, an electrode layer and a second insulating material layer sequentially formed on the top surface of the base, wherein the top of the conductive cap is higher than the top surface of the base and the top surface of the insulating tube, and the top of the conductive cap is electrically connected to the electrode layer. The material forming the insulating tube has a first thermal expansion coefficient, and a material forming the conductive cap has a second thermal expansion coefficient, wherein the difference between the first thermal expansion coefficient and the second thermal expansion coefficient is less than 1.5*10.supra.-6 mK, and the gap between the outer sidewall of the conductive cap and the inner wall of the insulating tube surrounding the conductive cap is less than 50 um.

Description

Substrate carrying table for vacuum processing device and manufacturing method thereof

The present invention relates to the technical field of semiconductor processing, and in particular to a structure and a manufacturing method of a substrate carrier for a vacuum processing apparatus.

In the semiconductor processing technology, plasma etching, plasma-assisted chemical vapor deposition and other processing processes need to be performed in a vacuum processing chamber. In order to fix the substrate to be processed, an electrostatic chuck is set in the vacuum processing chamber to apply high-voltage direct current Connected to the electrode in the electrostatic chuck, so as to generate electrostatic attraction, the substrate on the electrostatic chuck is firmly adsorbed on the electrostatic chuck. FIG. 1 is a schematic structural diagram of a typical vacuum processing apparatus. The vacuum processing chamber 100 includes a substrate carrying table. The substrate carrying table includes a conductive base 10 and an electrostatic chuck 120 on the conductive base. Wherein the conductive base is usually made of aluminum, and a plurality of heat exchange pipes are provided to allow a large amount of cooling liquid to flow through the heat exchange pipes to control the temperature of the conductive base. The electrostatic chuck 120 includes a bottom insulating layer 122, a top insulating layer 124, and an electrode layer 123 located between the two insulating layers. The two insulating layers are usually made of alumina or aluminum nitride, and the electrode layers are usually made of tungsten or molybdenum. to make. The base 10 is connected to an external radio frequency power source through a cable. At the same time, a through hole is formed in the base 10 through the upper and lower surfaces of the base. An insulating tube 130 is provided in the through hole, and a conductive element 131 is provided in the insulating tube 130. Between a high voltage direct current power source (HV) and the electrode layer 123.

The traditional manufacturing process of the electrostatic chuck is to first provide a bottom insulating layer 122, and then print or spray a layer of conductive material on the insulating layer 122 to form an electrode layer 123, and then cover a top insulating material layer 124. Such an electrostatic chuck is mounted on the base 10 as a single component to constitute a substrate carrying table. In order to provide a DC power supply channel, it is further necessary to remove a part of the insulating material on the bottom insulating layer 122 to expose the electrode layer 123, then solder the conductive element 131 to the exposed electrode layer 123, and finally pass the conductive element 131 into the insulation A conductive path is formed in the tube 130. FIG. 2 is an enlarged cross-sectional view of the top of the base 10 in the X-dashed frame in FIG. In order to facilitate the penetration of the conductive wire 131b into the insulating pipe 130, the inner diameter of the insulating pipe 130 must be larger than the diameter of the conductive wire 131b, so that there is a sufficient redundant gap between the two. The bottom surface of the electrostatic chuck 120 and the top surface of the base 10 need to be fixed by an adhesive material 121. However, when the vacuum processing chamber is used for plasma processing, the adhesive material on the side surface of the substrate bearing table will be exposed to the reaction chamber. The corrosive plasma gas inside is corroded by the plasma and forms a gap, which not only easily forms contaminated particles but also causes arcing, which damages the electrostatic chuck structure. In addition, since the electrostatic chuck 120 and the base 10 are fixed with an adhesive material, and the thickness of the adhesive material during coating and after drying cannot be accurately controlled, the substrate and the base adsorbed on the electrostatic chuck 10 The parallelism of the upper surface cannot be guaranteed, which will also cause unevenness in the substrate processing effect.

Therefore, the industry needs to develop a new substrate carrier to prevent the adhesive material on the bottom of the electrostatic chuck from being corroded, and at the same time, ensure that the substrate is fixed on the electrostatic chuck parallel to the upper surface of the base.

The invention discloses a substrate carrying table for a vacuum processing device, comprising: a base; a through hole is provided in the base; an insulating tube is provided in the through hole; a conductive element is provided in the insulating tube; the conductive element includes a conductive A cap and a conductive rod, wherein the conductive cap is located at the upper end and the horizontal cross-sectional area is greater than the horizontal cross-sectional area of the conductive rod; the conductive rod is located below the conductive cap and is electrically connected to the conductive cap, and is surrounded by an insulating tube; The first insulating material layer, the electrode layer, and the second insulating material layer. The top of the conductive cap is higher than the top surface of the base, and the top of the conductive cap is electrically connected to the electrode layer. The insulating tube has a first thermal expansion coefficient, and the conductive cap has a second thermal expansion coefficient. The difference between the first thermal expansion coefficient and the second thermal expansion coefficient is less than or equal to 1.5 * 10 ^-6 mK.

Preferably, the gap between the outer wall of the electric cap and the inner wall of the insulating tube surrounding the conductive cap is less than 50um, and most preferably, the gap between the outer wall of the conductive cap and the inner wall of the insulating tube surrounding the conductive cap is greater than zero and less than Is equal to 25um.

The lower end of the conductive element is electrically connected to a high-voltage DC power source to form an electrostatic attraction force.

The insulating tube is made of alumina, the conductive cap is made of titanium alloy, or the insulating tube is made of aluminum nitride, and the conductive cap is made of tungsten.

The conductive rod and the conductive cap are made of the same material, and the gap between the outer wall of the conductive rod and the inner wall of the insulating tube is less than 50um. The material of the conductive rod can also be different from the material of the conductive cap. For example, the conductive rod can be made of copper. The material constituting the conductive rod has a third thermal expansion coefficient, which is greater than 50% of the first thermal expansion coefficient. The gap with the inner wall of the insulation tube is greater than 100um.

The bottom of the conductive rod is fixed to the bottom surface of a conductive interconnection member by a conductive nut, and the top surface of the conductive interconnection member and the inner wall of the insulation tube are fixed to each other. The conductive rod passes through a first hole formed on the conductive interconnection member and is fixed with a conductive nut. The conductive interconnection member further includes a second hole, a conductive plug portion is fixed in the second hole, and a conductive slot is provided at the bottom of the conductive plug portion. . The conductive nut is made of titanium or tungsten, and the conductive interconnect is made of copper or titanium. The insulating pipe includes an upper pipe having a first cross-sectional area and a lower pipe having a second cross-sectional area, wherein the second cross-sectional area is larger than the first cross-sectional area, and the conductive interconnecting member is located in the lower pipe.

The conductive cap in the present invention may be a round truncated conductor with a large size and a small size.

Optionally, there is a gap between the insulating tube and the inner wall of the through hole of the base, and the gap is less than 50um.

The invention further provides a method for manufacturing a substrate carrier for a vacuum processing device, comprising the steps of: providing a base, a through hole is provided in the base; and an insulating tube is provided in the through hole opened in the base. ; A conductive element is provided inside the insulating tube, the conductive element includes a conductive cap at the top and a conductive rod below the conductive cap, so that the top of the conductive cap is exposed on the upper surface of the base; and a first insulation is formed on the upper surface of the base Material layer; removing the first insulating material layer located on the top of the conductive cap by mechanical grinding or the like; coating an electrode layer made of a conductive material on the upper surface of the first insulating material layer and the conductive cap; forming on the electrode layer A second layer of insulating material; wherein the insulating tube is made of a material having a first thermal expansion coefficient, the conductive cap is made of a material having a second thermal expansion coefficient, and the difference between the first thermal expansion coefficient and the second thermal expansion coefficient is less than or equal to 1.5 * 10 ^-6 mK. A gap is set between the conductive cap and the inner wall of the insulating tube, and the gap is less than 50um.

The conductive cap is made of titanium or tungsten, and the insulating tube is made of aluminum oxide or aluminum nitride.

The conductive rod is made of a material having a third thermal expansion coefficient, the third thermal expansion coefficient is greater than 50% of the first thermal expansion coefficient, and the gap between the outer side wall of the conductive rod and the inner wall of the insulating tube is greater than 100um.

The first insulating layer includes multiple sub-insulating layers, and different sub-insulating layers have different porosities to prevent the insulating layer from cracking during thermal expansion. In the process of forming an insulating material layer on the upper surface of the base or forming a second insulating material layer on the electrode layer, a method of forming the insulating material layer is selected from one of chemical vapor deposition, physical vapor deposition, and plasma spraying processes.

The embodiments of the present invention are further described below with reference to Figures 3 to 5 of the drawings.

The invention discloses a substrate carrier for a vacuum processing chamber. The mounting table of the present invention is still composed of the base 10 and the electrostatic chuck 120 on the upper surface of the base, but the electrostatic chuck 120 is not bonded to the base 10 by an adhesive material as an independent component, but is made of a multilayer material. The coating process is an electrostatic chuck structure formed directly on the upper surface of the base 10.

Figure 3 is an enlarged cross-sectional view of the top of the pedestal 10 and the electrostatic chuck. In order to directly coat the upper surface of the pedestal 10 to form a multi-layered insulating layer and an electrode layer material, it is necessary to insert the conductive element 31 into the via of the pedestal in advance. In the insulating tube 30 provided in the hole, the surface of the base 10 is sequentially coated to form an insulating material layer 22, an electrode layer 23, and a second insulating material layer 24. The conductive element 31 includes a conductive cap 31a with a large cross-sectional area on the top and long conductive rods 31b and 31c below. The conductive cap needs to cover the opening at the upper end of the insulating tube 30 to prevent the coating material from falling into the opening, and at the same time, the conductive cap 31a obtains more communication area with the electrode layer 23. After coating the first insulating material layer 22, the insulating material layer 22 covering the top surface of the conductive element 31 needs to be ground off, so that the electrode layer 23 coated in the next step can cover the top surface of the conductive element 31. .

In the above manufacturing method of directly coating the material layer on the surface of the base, external mechanical force is applied to the conductive cap 31a during the steps of plasma spraying and grinding the insulating material on the top of the conductive cap. Therefore, if the conductive element 31 does not have Being tightly fixed into the insulating tube 30 faces serious problems. If an electrical connection design such as the conventional technology shown in FIG. 2 is adopted, a large gap between the conductive wire 131b and the insulating tube 130 will cause a trace (such as several micrometers) distance of the conductive cap 31a to move. The material layer on the electrostatic chuck itself is very thin, the thickness of the electrode layer 23 is less than 40um, and it is very brittle, so the slight movement of the conductive cap 31a will also cause the top of the conductive cap 31a to be disconnected from the insulating material layer 22, resulting in a gap. In the subsequent steps of coating the conductive layer to form the electrode layer 23 and forming the insulating material layer 24, this gap will cause the electrode layer 23 and the second insulating material layer 24 to be unevenly deposited in the gap region, and eventually cause the conductive connection to be non-uniform. Stable and even electrostatic chucks have structural defects. In order to prevent the conductive cap from moving during the manufacturing process of the substrate supporting table, if the conductive cap 31a and the conductive element 31 of the present invention are still copper, the outer wall of the conductive cap is closely attached to the inner wall of the insulating tube 30 through mechanical size design, so that The conductive cap 31a is prevented from shaking during processing. However, this design also brings other problems. For example, due to the requirements of process design in the vacuum processing chamber, the temperature of the base 10 is often controlled at a higher temperature, and the copper conductive element 31 buried in the base will follow. The temperature rises from room temperature to the process temperature, and gradually expands. Because the constituent material of the insulating tube 30 is usually alumina (Al ₂ O ₃ ), the expansion coefficient of alumina is lower than 8.6, and that of copper is 14.2. Both are at the same temperature. When rising, the expansion of the copper conductive element 31 in the radial direction will be restrained by the insulating tube 30. Eventually, the copper conductive element 31 will expand upward in the vertical direction, so that the conductive cap 31a moves upward to break through the thin insulating material layer 24 and the electrode above. In layer 23, a crack is formed, so that the electrostatic chuck is damaged.

Therefore, the method of directly depositing or coating a material layer on the base to form an electrostatic chuck needs further improvement, while avoiding the following two problems: (1) The conductive cap 31a is horizontally moved when the conductive cap 31a is not fastened, resulting in a conductive cap. A gap is generated between 31a and the insulating material layer 22, and (b) the problem that the conductive cap 31a breaks the electrostatic chuck upward due to thermal expansion after the conductive cap is fastened on the side.

In the first embodiment of the present invention shown in FIG. 3, the insulating tube 30 includes two sections. The insulating tube 301 at the top is a cylindrical hollow tube, and the insulating tube 303 with a large cross-sectional area at the bottom includes an upper tube. The surface 302 is connected to the side wall of the insulating tube 301, and the horizontal positions of the two are staggered. The insulating tube 303 includes a conductive element 31 and a conductive plug portion 35 inside, and a conductive nut 32 for fastening the conductive element 31, and further includes a conductive interconnection member for electrically connecting the conductive element 31 and the conductive plug portion 35 to each other. 33. The conductive interconnecting member 33 may be made of copper or titanium, and the insulating tube 30 is made of Al ₂ O _{3. The} conductive element includes a conductive cap 31a having a maximum cross-sectional area at the top section, and a conductive rod 31b located at the middle section is passed through the insulation. The tube 301 extends downward into the insulating tube 303. The lower conductive rod 31c of the conductive element has a minimum cross-sectional area, is located in the insulating tube 303, and has a fixed thread on the side wall. A conductive nut 32 made of a conductive material (such as titanium). The conductive nut 32 has a hole 321, and the inner wall of the hole 321 is screwed with the side wall of the conductive rod 31c of the lower part of the conductive element 31 to fasten each other. The metal conductive nut 32 is provided with upward pressure while being fastened to the conductive rod 31c. The upper surface of the metal conductive nut 32 is in close contact with the lower surface of the conductive interconnection member 33 to ensure the conductive stability between the two. The conductive interconnection member The upper surface of 33 and the lower end of the insulating tube 301 are in close contact with each other, so that the lower end of the insulating tube 301, the conductive interconnecting member 33, the metal conductive nut 32, and the conductive element 31 which are in close contact with each other are finally fixed in position in the insulating tube 30.

As shown in Figs. 4a, 4b, 4c, and 4d, the conductive element 31, the insulating tube 30, the conductive nut 32, and the conductive interconnection member 33 in the first embodiment of the present invention shown in Fig. 3 are shown in Fig. 3 Perspective illustration. The conductive rod 31c at the lower end portion of the conductive element 31 passes through a first through hole 331 formed on the conductive interconnecting member 33, and the diameter of the first through hole 331 is larger than the diameter of the conductive rod 31c, and there is a certain gap 42 therebetween. The conductive interconnecting member 33 includes a second through-hole 332 at a position away from the first through-hole 331. A conductive plug-in portion 35 and the inner wall of the second through-hole 332 on the conductive interconnecting member 33 are fixed to each other to achieve a stable electrical connection. The bottom of the connecting part 35 is further provided with a conductive slot 37, and a conductive plug (not shown in the figure) is connected with the high-voltage DC power supply below. When the substrate carrier needs to be maintained, the conductive plug can be removed from the conductive slot 37. Pull out, and then remove the substrate carrier. The bottom of the conductive interconnecting member 33 further includes a cover plate 36 covering the bottom of the conductive mechanism. The cover plate 36 is also made of an insulating material. For example, it can be made of plastic (VESPLE) or ceramic to realize the above-mentioned conductive mechanism. insulation. The cover plate 36 may be fixed to the base 10 by bolts to further fix the metal conductive nut 32, the conductive interconnecting member 33, and the conductive element 31. During the operation of the vacuum processing device, the temperature of the pedestal 10 frequently changes, and the temperature variation range is large, which can reach more than 40 degrees. Therefore, the conductive element 31 undergoes thermal expansion during the heating process. The conductive cap 31a in the conductive element of the present invention has a gap 43 with the inner wall of the corresponding insulating tube 30, and there is a certain gap 42 between the conductive rods 31b and 31c and the inner wall of the insulating material ring and the first perforation 331. These two gaps 42 , 43 need to have the best parameters to achieve the technical effect of the present invention. In the present invention, the conductive element 31 is made of a titanium alloy. Since the thermal expansion coefficient of titanium is 8.9, which is very close to that of the material Al ₂ O ₃ of the insulating tube 30 as shown in the following table, the conductive element 31 and the insulating tube are heated during the heating process. The expansion range of 30 is basically synchronous, except that the expansion range of the conductive element 31 is slightly larger than that of the insulating tube 301. Therefore, as long as a very small gap is left between the outer wall of the conductive rod 31b and the conductive cap 31a and the inner wall of the insulating tube 301, such as within 50um, the optimal distance of 25um or less can ensure that the conductive rod 31b and the conductive cap 31a can face each other. The expansion in the radial direction avoids the upward expansion force and breaks the fragile ceramic insulating material layer 24 above. Because this distance is small and the bottom of the conductive element 31 is fixed by the metal conductive nut 32, the upper conductive rod 31b and the conductive cap 31a are basically restricted by the inner wall of the insulating tube 301. During the manufacturing process of the electrostatic chuck The conductive cap 31a will not be displaced when pushed by a small external force. Finally, the present invention uses conductive metal titanium having an expansion coefficient close to that of the insulating tube 30, and at the same time, the gaps 43 and 42 reserved between the conductive cap 31a, the conductive rod 31b and the inner wall of the insulating tube are less than 50um, so that the conductive element 31 will neither be displaced during the manufacturing process, nor will it break the electrostatic chuck above during the subsequent temperature cycle.

The conductive element 31 in the present invention may have three different diameters at different heights as shown in FIG. 3, or may be divided into only two sections. The conductive cap 31a at the top is a flat cylindrical conductive sheet with the largest diameter. The lower conductive rods 31b and 31c may have the same diameter. In addition to the conductive cap 31a, it can be cylindrical, or it can be large and small in the shape of a circular truncated cone. Its cross section is trapezoidal. The circular truncated cone-shaped inclined side wall cooperates with the inclined inner wall of the top of the insulating tube 30 to further avoid the conductive cap. Horizontal movement occurs during the manufacturing process. The conductive element 31 of the present invention may also be a conductive pillar with a uniform diameter, as long as the difference between the thermal expansion coefficient of the conductive element and the thermal expansion coefficient of the insulating pipe is less than a limit, and the gap between the side wall of the conductive pillar and the insulating pipe 30 Less than 50um can achieve the purpose of the present invention.

As shown in FIG. 5, a structure diagram of a conductive element 31 according to a second embodiment of the present invention is shown. The conductive element 31 includes a conductive cap 31 a at the top and a conductive rod 31 b below, both of which are two independent components. The conductive rod 31b is combined with the bottom of the conductive cap 31a through a mechanical structure. The structure is similar to the first embodiment shown in FIG. 3, the main difference is that the conductive element 31 is made of two materials, the conductive cap 31a on the top is made of titanium or titanium alloy, and the conductive cap 31a and the inner wall of the insulating tube 30 There is still a certain gap 41, and the gap 41 must be less than 50um to ensure that the conductive cap 31a does not move horizontally, and the conductive cap 31a itself does not thermally expand and lift upward, on the other hand, the conductive rod 31b below can be The expansion coefficient material is made of copper, but the gap 40 between the conductive rods 31b and the inner wall of the insulating tube 301 surrounding them and the inner wall of the first through hole 331 of the conductive interconnect 33 must be sufficiently large. The above-mentioned gap 40 needs to be larger than 100um in order to avoid the expansion of the conductive rod 31b in the horizontal direction during the thermal expansion process, so as to ensure that the copper conductive rod 31b does not rise upward. The conductive cap 31a and the lower conductive rod 31b may be fastened by screws, or may be fixed to each other by other methods such as welding.

The present invention further provides a third embodiment, which is similar in structure to the first embodiment described in FIG. 3, in which the conductive element 31 can be made of metal tungsten, the thermal expansion coefficient of tungsten is 4.3 * 10 ^-6 mK, and the insulating tube 30 The choice of AlN, the thermal expansion coefficient of aluminum nitride is affected by the production process, and has a certain range, usually in the range of 4.6-5.4 * 10 ^-6 mK. The expansion coefficients of tungsten and aluminum nitride are also very close. The electrical properties also meet the requirements of the insulation and conductivity characteristics of the present invention, so the combination of these two materials can also achieve the purpose of the present invention.

The insulating tube 30 in the present invention is made of ceramic materials such as alumina or aluminum nitride, and the base 10 is made of aluminum with a high coefficient of expansion, so it is also necessary to reserve between the outer wall of the insulating tube 30 and the inner wall of the through hole of the base. A certain gap, such as 50um, to avoid damage to the insulation tube caused by extrusion and collision.

In the present invention, by selecting specific manufacturing materials of the insulating tube and the conductive cap, the thermal expansion coefficients of the two are close, such as the difference between the thermal expansion coefficients of the two is less than 1.5 * 10 ^-6 mK. During the vacuum processing process, the gap between the conductive cap and the inner wall of the insulating tube caused by the change in the temperature of the base is always kept within a small range (such as 10-50um). This gap is not too large and the conductive cap is affected. The external force moves horizontally, nor is it too small, which causes the conductive cap to swell upward to break the insulating material layer 24 and the electrode layer 23 after being heated.

At the same time, the present invention further provides a method for manufacturing a substrate carrier. In the manufacturing process, the substrate carrier of the present invention includes the following steps:

In the first step, the insulating tube 30 is first set into a through hole opened in the base 10, and then a metal conductive element is inserted into the insulating tube 30 into the insulating tube 30. The insulating tube 30 with the metal conductive element 31 inserted in advance may also be fixed Into the inner hole of the base 10; the top of the conductive element 31 includes a conductive cap 31a and a conductive rod located below the conductive cap 31a, wherein the diameter of the conductive cap 31a is larger than the conductive rod below to ensure the conductive cap 31a and the electrode layer 23 While the top of the conductive cap 31 a is higher than the upper surface of the base 10.

In the second step, an insulating material layer 22 is formed on the upper surface of the base. The formation method may be chemical vapor deposition (CVD), physical vapor deposition (PVD), or plasma spraying (PS).

In the third step, the insulating material layer on the top of the conductive cap 31a is removed by a method such as mechanical grinding. The insulating material layer 22 may be made of an insulating ceramic material such as alumina or aluminum nitride. The insulating material layer 22 may be formed by stacking multiple layers of sub-insulating materials with different porosity, and finally reaching a thickness of 600-800um to prevent the electrostatic chuck from being punctured by high voltage electricity, and at the same time avoid the insulating material layer and the aluminum base. Different thermal expansion coefficients cause cracking failure of the insulating material layer 22.

In a fourth step, an electrode layer 23 composed of a conductive material tungsten / molybdenum is coated on the surface of the flat insulating material layer 22 and the upper surface of the conductive cap.

In a fifth step, a second insulating material layer 24 is finally formed on the electrode layer 23.

The conductive element 31 is made of titanium, the insulating tube 30 is made of alumina, or the conductive element 31 is made of tungsten, and the insulating tube 30 is made of aluminum nitride, as long as the thermal expansion coefficient of the conductive element The difference between the thermal expansion coefficient of the insulation tube 30 and the insulation tube 30 is less than 1.5 * 10 ^-6 mK. The best need is to make the gap between the conductive element and the insulation tube less than 50um, so that the substrate support table can be manufactured and subsequently processed. The stable operation in the medium prevents the conductive element from breaking through the electrostatic chuck.

Because the present invention directly coats multiple layers of insulating material layers and electrode layers on the base, it can ensure that the material layer formed by the coating has a more uniform thickness, and can be mechanically polished and other processed after the coating is completed. The thickness of each material layer on the surface can be controlled uniformly, so the upper surface of the finally obtained electrostatic chuck, that is, the mounting plane of the substrate will maintain a high degree of parallelism with the upper surface of the base. Since the conventional technology uses a liquid adhesive material layer, the coating process itself cannot guarantee uniform distribution on the upper surface of the base, and then the volume shrinkage occurs after the drying process, and the uniformity of the thickness of the adhesive material layer cannot be controlled. The parallelism between the upper surface of the electrostatic chuck and the upper surface of the base cannot be reliably guaranteed.

Although the content of the present invention has been described in detail through the above-mentioned preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Many modifications and substitutions of the present invention will become apparent to those skilled in the art after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.

10‧‧‧ base

100‧‧‧Vacuum processing chamber

120‧‧‧ electrostatic chuck

121‧‧‧ Adhesive material

122, 124‧‧‧ Insulation

123, 23‧‧‧ electrode layer

130, 30, 301, 303‧‧‧ insulated pipes

131, 31‧‧‧ conductive elements

131a‧‧‧solder

131b‧‧‧ Conductive wire

22, 24‧‧‧ insulating material layer

302‧‧‧Top

31a‧‧‧Conductive Cap

31b, 31c‧‧‧ conductive rod

32‧‧‧Conductive nut

321‧‧‧hole

33‧‧‧Conductive Interconnect

331‧‧‧first perforation

332‧‧‧second perforation

35‧‧‧Conductive connector

36‧‧‧ Cover

37‧‧‧ conductive slot

40, 41, 42, 43‧‧‧ clearance

FIG. 1 is a schematic diagram of a vacuum processing apparatus of the prior art. Fig. 2 is a schematic diagram of the top of the substrate bearing table at the dotted frame X in Fig. 1. FIG. 3 is a schematic cross-sectional view of a base according to a first embodiment of the present invention. FIG. 4a, FIG. 4b, FIG. 4c, and FIG. 4d are three-dimensional schematic diagrams of a conductive element, an insulating tube, a conductive nut, and a conductive interconnecting member in the first embodiment of the present invention shown in FIG. 3, respectively. FIG. 5 is a schematic partial cross-sectional view of a base according to a second embodiment of the present invention.

Claims (27)

A substrate carrying table for a vacuum processing device includes: a base; a through hole is provided in the base; an insulating tube is provided in the through hole; a conductive element is provided in the insulating tube, and the conductive element includes a A conductive cap and a conductive rod, wherein the conductive cap is located at an upper end and a horizontal cross-sectional area is larger than the horizontal cross-sectional area of the conductive rod, the conductive rod is located below the conductive cap and is electrically connected to the conductive cap, and is surrounded by the insulating tube; A first insulating material layer, an electrode layer, and a second insulating material layer are sequentially arranged on the top surface of the base, and the top of the conductive cap is higher than the top surface of the base, and the top of the conductive cap is electrically connected to the electrode layer; the insulating tube It has a first thermal expansion coefficient, and the conductive cap has a second thermal expansion coefficient, and the difference between the first thermal expansion coefficient and the second thermal expansion coefficient is less than or equal to 1.5 * 10 ^-6 mK. The substrate supporting table for a vacuum processing device according to item 1 of the scope of the patent application, wherein the gap between the outer wall of the conductive cap and the inner wall of the insulating tube surrounding the conductive cap is less than 50um. The substrate carrier for a vacuum processing device as described in the first patent application scope, wherein the lower end of the conductive element is electrically connected to a high-voltage DC power source. The substrate supporting table for a vacuum processing device according to item 1 of the patent application scope, wherein the insulating tube is made of alumina and the conductive cap is made of titanium alloy. The substrate carrier for a vacuum processing apparatus as described in the first patent application scope, wherein the insulating tube is made of aluminum nitride, and the conductive cap is made of tungsten. As described in item 2 of the scope of the patent application, the substrate carrier for a vacuum processing device, wherein the gap between the outer side wall of the conductive cap and the inner wall of the insulating tube surrounding the conductive cap is greater than zero and less than or equal to 25um. The substrate carrier for a vacuum processing device as described in the first patent application scope, wherein the conductive rod and the conductive cap are made of the same material. As described in item 7 of the scope of the patent application, the substrate supporting table for a vacuum processing device, wherein the gap between the outer wall of the conductive rod and the inner wall of the insulating tube is less than 50um. According to the substrate supporting table for a vacuum processing device described in item 1 of the scope of patent application, the material constituting the conductive rod has a third thermal expansion coefficient, and the third thermal expansion coefficient is greater than 50% of the first thermal expansion coefficient. As described in item 9 of the scope of the patent application, the substrate supporting table for a vacuum processing device, wherein the gap between the outer wall of the conductive rod and the inner wall of the insulating tube is greater than 100um. The substrate carrier for a vacuum processing apparatus as described in claim 9 of the patent application scope, wherein the conductive rod is made of copper. The substrate supporting table for a vacuum processing device according to item 1 of the scope of patent application, wherein the bottom of the conductive rod is fixed to the bottom surface of a conductive interconnection member by a conductive nut, and the top surface of the conductive interconnection member is insulated from the insulation. The inner walls of the tubes are fixed to each other. The substrate carrier for a vacuum processing device according to item 12 of the scope of the patent application, wherein the conductive rod passes through a first hole formed in the conductive interconnect and is fixed to the conductive nut. The conductive interconnect further includes In the second perforation, a conductive plug-in portion is fixed in the second perforation, and a bottom of the conductive plug-in portion has a conductive slot. The substrate carrier for a vacuum processing device according to item 12 of the application, wherein the conductive nut is made of titanium or tungsten, and the conductive interconnect is made of copper or titanium. The substrate carrying table for a vacuum processing device according to item 12 of the scope of patent application, wherein the insulating pipe includes an upper pipe having a first cross-sectional area and a lower pipe having a second cross-sectional area, wherein the second cross-sectional area is greater than In a first cross-sectional area, the conductive interconnect is located in the lower pipe. The substrate carrying table for a vacuum processing device as described in item 1 of the scope of the patent application, wherein the conductive cap is a round-shaped conductor with a large size and a small size. According to the substrate supporting table for a vacuum processing device described in item 1 of the scope of the patent application, a gap exists between the insulating tube and an inner wall of the through hole of the base, and the gap is less than 50um. A substrate carrying table for a vacuum processing device includes: a base; a through hole is provided in the base; an insulating tube is provided in the through hole; a conductive element is provided in the insulating tube; and a top surface of the base is provided. A first insulating material layer, an electrode layer, and a second insulating material layer are sequentially arranged on the top, the top of the conductive element is higher than the top surface of the base, and the top of the conductive element is electrically connected to the electrode layer; the insulating tube has a first thermal expansion coefficient The conductive element has a second thermal expansion coefficient, and a difference between the first thermal expansion coefficient and the second thermal expansion coefficient is less than or equal to 1.5 * 10 ^-6 mK. As described in claim 18 of the scope of patent application, the gap between the side wall of the conductive element and the inner wall of the insulating tube is less than 50um. The substrate carrier according to claim 18, wherein the conductive element is made of titanium or tungsten. A method for manufacturing a substrate carrier for a vacuum processing device includes the following steps: a base is provided, and a through hole is provided in the base; an insulating tube is provided in the through hole opened in the base; A conductive element is disposed inside the insulating tube, the conductive element includes a conductive cap at the top and a conductive rod below the conductive cap, so that the top of the conductive cap exposes the upper surface of the base; A first insulating material layer is formed on the upper surface; the first insulating material layer on the top of the conductive cap is removed by a method such as mechanical grinding; a layer of conductive material is coated on the first insulating material layer and the upper surface of the conductive cap A second layer of insulating material is formed on the electrode layer; wherein the insulating tube is made of a material having a first thermal expansion coefficient, the conductive cap is made of a material having a second thermal expansion coefficient, the first The difference between the thermal expansion coefficient and the second thermal expansion coefficient is less than or equal to 1.5 * 10 ^-6 mK. According to the method for manufacturing a substrate carrier according to item 21 of the scope of patent application, a gap is provided between the conductive cap and an inner wall of the insulating tube, and the gap is less than 50um. The method for manufacturing a substrate carrier according to item 21 of the application, wherein the conductive cap is made of titanium or tungsten. The method for manufacturing a substrate carrier according to item 23 of the application, wherein the insulating tube is made of alumina or aluminum nitride. The method for manufacturing a substrate carrier according to item 21 of the application, wherein the conductive rod is made of a material having a third thermal expansion coefficient, the third thermal expansion coefficient is greater than 50% of the first thermal expansion coefficient, and the conductive rod The gap between the outer wall and the inner wall of the insulating tube is greater than 100um. The method for manufacturing a substrate carrier according to item 21 of the scope of the patent application, wherein the first insulating layer includes a plurality of sub-insulating layers, and different sub-insulating layers have different porosities. The method for manufacturing a substrate carrier according to item 21 of the scope of patent application, wherein during the process of forming an insulating material layer on the upper surface of the base or forming a second insulating material layer on the electrode layer, The method is selected from one of chemical vapor deposition, physical vapor deposition, and plasma spraying processes.