TW201837973A - Barrier layer system, electro-optical device having the same, and method for manufacturing a barrier layer system in a continuous roll-to-roll process - Google Patents

Abstract

A barrier layer system (100) adapted for use in an electro-optical device is described. The barrier layer system includes a flexible substrate (101); a first barrier layer (110) and a second barrier layer (120), wherein the first barrier layer (110) and the second barrier layer (120) are configured to have barrier properties against water/oxygen permeation. Further, the barrier layer system includes a polymeric buffer layer (115) provided between the first barrier layer (110) and the second barrier layer (120), wherein the polymeric buffer layer (115) is configured to increase a permeation path length between the first barrier layer (110) and the second barrier layer (120).

Description

Barrier layer system and method for manufacturing the barrier layer system in a continuous winding process

Embodiments of the present disclosure relate to a barrier layer system suitable for use in an optoelectronic device and a method for manufacturing such a barrier layer system in a continuous winding process. Embodiments of the present disclosure are particularly related to a barrier layer system including a layer stack deposited on a flexible substrate. More specifically, the embodiments of the present disclosure relate to a barrier layer system manufactured by a continuous roll vacuum deposition process.

In the packaging industry, semiconductor industry, and other industries, there is a high demand for the processing of flexible substrates such as plastic films or foils. The process may consist of coating a flexible substrate with a desired material such as a metal (especially aluminum), a semiconductor, and a dielectric material, etching, and other processing steps performed on the substrate for a desired application. A system performing this work typically includes a processing drum, such as a cylindrical roller, the processing drum is coupled to a processing system for transferring a substrate, and at least a portion of the substrate is processed thereon. Therefore, a roll-to-roll (R2R) coating system can provide a high-throughput system.

Processes such as physical vapor deposition (PVD) processes, chemical vapor deposition (CVD) processes, and plasma enhanced chemical vapor deposition (PECVD) processes are typically capable of Used to deposit thin metal layers that can be applied to flexible substrates. In particular, the roll-on deposition system is experiencing a strong increase in demand in the display industry and the photovoltaic (PV) industry.

Examples of products made of coated flexible substrates are touch panels or organic light emitting diode (OLED) displays, due to their faster response times, larger viewing angles, higher Contrast, lighter weight, lower power, and adaptability to flexible substrates have recently received more attention in the display industry than liquid crystal displays (LCDs).

Therefore, for many years, optoelectronic devices such as display devices or touch panels have gradually developed into multi-layer systems, where different layers have different functions. However, the quality of traditional multilayer systems, for example in terms of barrier properties, still needs improvement. In particular, when exposed to water vapor or oxygen, organic light-emitting devices suffer from reduced output or early failure.

In view of the foregoing, there is a need to provide a barrier layer system suitable for use in an optoelectronic device, and a method for manufacturing such a barrier layer system, which overcomes at least part of the problems in the prior art.

In view of the foregoing, a barrier layer system according to an independent term and a method for manufacturing the barrier layer system are provided. Additional aspects, advantages, and features of the disclosure are made apparent by the claims, the description, and the drawings.

According to an aspect of the present disclosure, a barrier layer system is provided, which is suitable for use in an optoelectronic device. The barrier layer system includes a flexible substrate, a first barrier layer, and a second barrier layer. The first barrier layer and the second barrier layer are configured to have barrier properties against water / oxygen permeation. In addition, the barrier layer system includes a polymer buffer layer provided between the first barrier layer and the second barrier layer. The polymer buffer layer is configured to increase a length of a permeation path between the first barrier layer and the second barrier layer.

According to another aspect of the present disclosure, a barrier layer system is provided, which is suitable for use in an optoelectronic device. The barrier layer system includes a flexible substrate, a first barrier layer, and a second barrier layer of a polymer material, wherein the first barrier layer and the second barrier layer are configured to have a resistance to Barrier properties of water / oxygen permeation. One of the first barrier layers has a thickness T _BR1 of 50 nm ≤ T _BR1 ≤ 125 nm, and one of the second barrier layers has a thickness T _BR2 of 50 nm ≤ T _BR2 ≤ 125 nm. In addition, the first barrier layer and the second barrier layer are made of SiN _x , and each of the first barrier layer and the second barrier layer has a fracture toughness K _Ic of 4 MPa m ^0.5 ≤ K _Ic ≤ 6 MPa m ^0.5 . In addition, the barrier layer system includes a polymer buffer layer provided between the first barrier layer and the second barrier layer. The polymer buffer layer is configured to increase a length of a permeation path between the first barrier layer and the second barrier layer. A buffer layer thickness T _BF of one of the polymer buffer layers is 250 nm ≤ T _BF ≤ 350 nm, and The polymerization buffer layer is made of nHA / EGDA20.

According to yet another aspect of the present disclosure, there is provided a photovoltaic device having a barrier layer system according to any of the embodiments described herein.

According to yet another aspect of the present disclosure, a method for manufacturing a barrier layer system in a continuous winding process is provided. The method includes providing a flexible substrate to at least one first processing area, at least one second processing area, and at least one third processing area without breaking a vacuum. In addition, the method includes depositing a first barrier layer of inorganic material on the flexible substrate in the at least one first processing region, and depositing a buffer layer of organic material on the first substrate in the at least one second processing region. A second barrier layer of an inorganic material is deposited on the barrier layer and the buffer layer in the at least one third processing region. Depositing the first barrier layer, depositing the buffer layer, and depositing the second barrier layer particularly include using the same precursor.

The embodiments are also directed to a device for performing the disclosed method, and include a device portion for performing the various method aspects described. These method aspects may be performed by hardware components, a computer programmed with appropriate software, by any combination of the two, or in any other manner. In addition, embodiments according to the present disclosure are also directed to a method for operating the device. The method for operating the device includes method aspects for performing each function of the device.

Various embodiments will now be described in detail, one or more examples of which are shown in the figures, respectively. Each example is provided by way of explanation of this disclosure, and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in combination with any other embodiment to produce yet another embodiment. This disclosure is intended to cover such modifications and changes.

In the following description of the drawings, the same element symbols indicate the same or similar elements. Generally, only the differences between the individual embodiments will be described. Unless explicitly stated otherwise, the description of one part or aspect of one embodiment can also be applied to the corresponding part or aspect of another embodiment.

Before describing the various embodiments of this disclosure in more detail, some aspects of some terms and expressions used herein are explained.

In this disclosure, a "barrier layer system" should be understood as a one-layer stack that has barrier properties to water vapor and oxygen transport. The “barrier layer system” described herein can particularly include alternating layers (diades), which alternate layers include a polymeric buffer layer and a barrier layer. The barrier layer typically includes silicon nitride (SiN _x ), and the polymer buffer layer typically includes polyethylene glycol methacrylate (PGMA) and / or ethylene glycol diamine (EGDA) ). More specifically, the barrier layer system described herein can be understood as an ultrahigh barrier (UHB) system with a water vapor transmission rate (WVTR) of less than 10 ^-4 Unit is a few grams per square centimeter per day) and / or oxygen transmission rate (OTR) is a unit of several grams per square centimeter per day, especially below 10 ^-5 , more particularly below 10 ^-6 . The barrier system described herein can be particularly transparent. The term "transparent" as used herein, in particular, can include the ability of a structure to transmit light with relatively low scattering, such that, for example, the light transmitted therethrough can be seen substantially in a clear manner.

In this disclosure, a "flexible substrate" may be characterized as a flexible substrate. For example, the flexible substrate may be a foil. In particular, it should be understood that the flexible substrates described herein can be processed in the continuous winding process described herein, for example, in the winding processing system described herein. The flexible substrate described herein is particularly suitable for manufacturing a coating or an electronic device on the flexible substrate. The flexible substrate described herein can be particularly transparent, for example, the flexible substrate can be made of a transparent polymer material. More specifically, the flexible substrate described herein may include materials such as polyethylene terephthalate (PET), polycarbonate (PC), and polyethylene (PE). , Polyimide (PI), polyurethane (PU), poly (methacrylic acid methyl ester), triacetyl cellulose, cellulose triacetate (cellulose triacetate, TAC), cyclo olefin polymer, poly (ethylene naphthalate), one or more metals, paper, combinations thereof, and coated Cloth substrates such as hard coated PET (HC-PET) or hard coated TAC (HC-TAC) and the like.

In this disclosure, a "barrier layer" should be understood as a layer that has barrier properties to the transmission of water vapor and oxygen. In particular, the barrier layer described herein can have a water vapor transmission rate WVTR lower than 3 × 10 ^-3 g / m ² ) per day. For example, the present disclosure can comprise SiN _x barrier layer, in particular composed of SiN _x.

In the present disclosure, a "polymeric buffer layer" should be understood as a layer of a polymer material that includes polyethylene glycol methacrylate (PGMA) and / or ethylene glycol diamine (EGDA). In particular, the polymer buffer layer described herein should be understood as a layer configured to increase the length of a permeation path through the buffer layer, such as the length of the permeation path for water vapor or oxygen, such as from the buffer Length of permeation path from one side of the layer to the opposite side of the buffer layer.

In this disclosure, "permeation path length" should be understood as the length of one path of a molecule when a molecule permeates through a material, such as through a polymeric buffer layer as described herein.

FIG. 1 is a schematic diagram of a barrier layer system 100 according to an embodiment described herein. According to an embodiment capable of being combined with any of the other embodiments described herein, the barrier layer system 100 is suitable for use in an optoelectronic device and includes a flexible substrate 101, a first barrier layer 110, and a second Barrier layer 120. For example, the flexible substrate 101 may include a material selected from the group consisting of polycarbonate, polyethylene terephthalate, and poly (methacrylic acid methyl ester). A polymer material in the group consisting of triacetyl cellulose, triacetyl cellulose, cyclo olefin polymer, and poly (ethylene naphthalate). The first barrier layer 110 and the second barrier layer 120 are specifically configured to have barrier properties against water / oxygen permeation. In addition, the barrier layer system includes a polymer buffer layer 115 provided between the first barrier layer 110 and the second barrier layer 120, as shown in FIG. 1 by way of example. More specifically, as described in more detail with reference to FIG. 3, the polymer buffer layer 115 is configured to increase a length of a permeation path between the first barrier layer 110 and the second barrier layer 120.

Therefore, an improved barrier layer system is provided. Embodiments of the barrier layer system described herein are particularly provided to a one-layer system that has improved barrier properties to water vapor or oxygen compared to conventional barrier layer systems. In this way, by using the embodiment of the barrier layer system described herein in an optoelectronic device such as a display device or a touch panel, the durability of the optoelectronic device product can be improved.

According to an embodiment that can be combined with any of the other embodiments described herein, a thickness ratio TR of a buffer layer thickness T _{BF of the} polymer buffer layer 115 to a barrier layer thickness T _BR1 of a first barrier layer 110 can be 1.5 ≤ TR = T _BF / T _BR1 ≤ 4. For example, the thickness ratio TR may be TR = 3, for example, in a structure in which the buffer layer thickness T _BF = 300 nm and the barrier layer thickness T _BR1 of the first barrier layer 110 is T _BR1 = 100 nm. According to another example, the thickness ratio TR may be TR = 1.6, for example, in a structure in which the buffer layer thickness T _BF = 400 nm and the barrier layer thickness T _BR1 of the first barrier layer 110 is T _BR1 = 150 nm .

It should therefore be understood that if two values are known among the three parameter thickness ratios TR, the buffer layer thickness T _{BF of the} polymeric buffer layer, and the barrier layer thickness T _BR1 of the first barrier layer, one can obtain from the equation TR = T _BF / T _BR1 calculates the remaining third value.

According to an embodiment capable of being combined with any of the other embodiments described herein, the polymeric buffer layer 115 may have a thickness T _{BF of} about 400 nm, specifically about 300 nm, and more specifically about 250 nm. It should be understood that in this disclosure, the word "about" shall include a value that deviates from the associated value by ± 5%. So for example, approximately 400 nm should be understood as 400 nm ± 20 nm.

Therefore, by providing a barrier layer system having a polymer buffer layer as described herein, the barrier properties of the barrier layer system to water vapor or oxygen are improved. In addition, the thickness ratio TR of the buffer layer thickness T _{BF of the} polymer buffer layer 115 to the barrier layer thickness T _BR1 of the first barrier layer 110 may be particularly beneficial to increase the barrier properties of the barrier layer system described herein.

Referring to FIG. 2 as an example, according to some embodiments that can be combined with other embodiments described herein, the barrier layer system 100 may include a first polymer buffer layer 114 provided on the flexible substrate 101 and the first Between the barrier layers 110. The first polymer buffer layer 114 may be configured to increase a length of a permeation path between the flexible substrate 101 and the first barrier layer 110. In addition, the first polymer buffer layer 114 may have a thickness T _BF1 corresponding to the thickness T _BF of the polymer buffer layer 115 provided between the first barrier layer 110 and the second barrier layer 120. More specifically, the first polymerization buffer layer 114 can include a material selected from the group consisting of polyethylene glycol methacrylate (PGMA), ethylene glycol diamine (EGDA), and n-hexaacrylate / ethylene glycol diamine (nHexa -Acrylate / ethylene glycol diamine (nHA / EGDA), especially nHA / EGDA20.

Therefore, by providing the barrier layer system having the first polymer buffer layer 114 provided between the flexible substrate 101 and the first barrier layer 110, the barrier property of the barrier layer system to water vapor or oxygen can be improved. .

According to some embodiments that can be combined with other embodiments described herein, the thickness of the first buffer layer T _BF1 of one of the first polymer buffer layers 114 is a thickness greater than the thickness of the barrier layer T _BR1 of one of the first barrier layers 110. The ratio TR1 can be 1.5 ≤ TR1 = T _BF1 / T _BR1 ≤ 4. For example, the thickness ratio TR1 may be TR1 = 3, for example, in a configuration in which the first buffer layer thickness T _BF1 = 300 nm and the barrier layer thickness T _BR1 of the first barrier layer 110 is T _BR1 = 100 nm. . According to another example, the thickness ratio TR1 may be TR1 = 1.6, for example, where the first buffer layer thickness T _BF1 = 400 nm and the barrier layer thickness T _BR1 of the first barrier layer 110 is T _BR1 = 150 nm. Under construction.

Therefore, it should be understood that if two values are known among the three parameter thickness ratios TR1, the buffer layer thickness T _{BF1 of the} first polymerization buffer layer, and the barrier layer thickness T _BR1 of the first barrier layer, the equation can be obtained from the equation TR1 = T _BF1 / T _BR1 calculates the remaining third value. The thickness ratio TR1 described herein can be particularly advantageous for increasing the barrier properties of the barrier layer system described herein.

According to an embodiment capable of being combined with any of the other embodiments described herein, a barrier layer thickness T _BR1 of one of the first barrier layers 110 is 50 nm ≦ T _BR1 ≦ 300 nm. For example, the barrier layer thickness T _{BR1 of the} first barrier layer 110 can be selected from a range having a lower limit of 50 nm, particularly a lower limit of 75 nm, more particularly a lower limit of 100 nm, and an upper limit of 200 nm, especially an upper limit. 250 nm, more specifically the upper limit of 300 nm. According to some examples, the barrier layer thickness T _{BR1 of the} first barrier layer 110 can be about 100 nm, about 150 nm, about 200 nm, or about 250 nm.

According to an embodiment capable of being combined with any of the other embodiments described herein, one of the barrier layers 120 of the second barrier layer 120 has a thickness T _BR2 of 50 nm ≤ T _BR2 ≤ 300 nm. For example, the thickness of the second barrier layer 120 The barrier layer thickness T _BR2 can be selected from a range having a lower limit of 50 nm, particularly a lower limit of 75 nm, more particularly a lower limit of 100 nm, and an upper limit of 200 nm, especially an upper limit of 250 nm, and more particularly an upper limit of 300 nm. . According to some examples, the barrier layer thickness T _{BR2 of the} second barrier layer 120 can be about 100 nm, about 150 nm, about 200 nm, or about 250 nm.

According to an embodiment capable of being combined with any of the other embodiments described herein, the polymer buffer layer 115 may include at least one material selected from the group consisting of PGMA, EGDA, and nHA / EGDA, especially nHA / EGDA20.

Therefore, by providing a barrier layer system having a polymerized buffer layer as described herein, the barrier properties of the barrier layer system can be improved compared to a conventional barrier layer system.

FIG. 3 shows details of a part of a barrier layer system according to the embodiments described herein to describe the function of the aggregation buffer layer. FIG. 3 particularly illustrates a barrier layer system having a flexible substrate 101, a first barrier layer 110, a polymer buffer layer 115, and a second barrier layer 120, as described herein. In addition, in FIG. 3, the defects D in the first barrier layer 110 and the second barrier layer 120 are indicated by black squares. The dashed line starting from the defect D in the first barrier layer 110, passing through the polymerization buffer layer 115, and reaching the defect in the second barrier layer 120, is an infiltration path indicating that molecules such as water vapor or oxygen permeate through the layer system. Therefore, as shown in FIG. 3, by providing a barrier layer system having a polymerization buffer layer as described herein, the length of the permeation path of molecules such as water vapor or oxygen through the barrier layer system can be increased, so that The barrier properties are improved compared to the traditional barrier system.

According to an embodiment that can be combined with any of the other embodiments described herein, the first barrier layer 110 and the second barrier layer 120 include SiN _x . The first barrier layer 110 and the second barrier layer 120 may be composed of SiN _{x in} particular. This type of construction can be particularly beneficial for improving the barrier properties of barrier systems to water vapor or oxygen. In addition, the fracture toughness K _{Ic of the} first barrier layer and / or the second barrier layer can be 4 MPa m ^0.5 ≤ K _Ic ≤ 6 MPa m ^0.5 .

According to an embodiment capable of being combined with any of the other embodiments described herein, the water vapor transmission rate WVTR of one of the first barrier layers 110 is lower than 3 × 10 ^-3 g / m ² per day. For example, the water vapor transmission rate WVTR of the first barrier layer 110 can be about 2 × 10 day ^{- 3} g / m ^2. In particular, it should be understood that the water vapor transmission rate WVTR is typically measured at 40 ° C and 100% relative humidity (RH) with an osmotic unit such as "Aquatran 2". It should be noted in this regard that as temperature and relative humidity decrease, the measured water vapor transmission rate typically decreases as well. For example, at 20 ° C and 50% relative humidity (RH), the measured water vapor transmission rate is approximately 10 times lower than at 40 ° C and 100% relative humidity (RH).

According to an embodiment capable of being combined with any of the other embodiments described herein, the water vapor transmission rate WVTR of one of the second barrier layers 120 is lower than 3 × 10 ^-3 g / m ² per day. For example, similar to the first barrier layer 110, a second water vapor transmission rate WVTR barrier layer can be about 120 per day of ^{2 × 10 - 3 g / m} 2, for example, 40 ° C and 100% relative humidity (RH) was measured with the osmotic unit "Aquatran 2".

Referring exemplarily to FIG. 4A, according to an embodiment capable of being combined with any of the other embodiments described herein, the barrier layer system 100 further includes at least one layer stack 130 provided on the second barrier layer 120. The at least one layer stack 130 can include, in particular, another polymeric buffer layer 135 and another barrier layer 140. In particular, the another polymer buffer layer 135 may be configured to add the second barrier layer 120 and the other barrier layer 140 to the second barrier layer 120 and the other barrier layer 140. More specifically, the another polymer buffer layer 135 may include at least one material selected from the group consisting of PGMA, EGDA, and nHA / EGDA, particularly nHA / EGDA20. In addition, the another polymer buffer layer 135 may have a thickness of about 400 nm, specifically about 300 nm, and more specifically about 250 nm.

According to an embodiment capable of being combined with any of the other embodiments described herein, the further barrier layer 140 can include SiN _x . The further barrier layer 140 may be composed of SiN _{x in} particular. In addition, the thickness of the barrier layer T _{BRF of} the another barrier layer 140 can be 50 nm ≦ T _BRF ≦ 300 nm. For example, the barrier layer thickness T _{BRF of} the another barrier layer 140 can be selected from a range having a lower limit of 50 nm, particularly a lower limit of 75 nm, more particularly a lower limit of 100 nm, and an upper limit of 200 nm, especially The upper limit is 250 nm, and more particularly the upper limit is 300 nm. According to some examples, the barrier layer thickness T _{BRF of} the another barrier layer 140 can be about 100 nm, about 150 nm, about 200 nm, or about 250 nm.

According to an embodiment that can be combined with any of the other embodiments described herein, the water vapor transmission rate WVTR of the further barrier layer 140 of the other barrier layer 140 is lower than 3 × 10 ^-3 g / m per day ² . For example, similar to the first barrier layer 110 or the second barrier layer 120, the water vapor barrier layer further WVTR 140 of transmittance per day can be about ^{2 × 10 - 3 g / m} 2, for example, at 40 Measured at ° C and 100% relative humidity (RH) with the osmotic unit "Aquatran 2".

Fig. 4B shows details of a part of the barrier layer system of Fig. 4A. FIG. 4B particularly shows a flexible substrate 101, a first barrier layer 110, a polymer buffer layer 115, a second barrier layer 120, another polymer buffer layer 135, and another barrier layer. A barrier system of 140, as described herein. In addition, in FIG. 4B, defects D in the first barrier layer 110, the second barrier layer 120, and the other barrier layer 140 are indicated by black squares. Dotted line starting from defect D of first barrier layer 110, passing through polymerization buffer layer 115, defect D of second barrier layer 120, and another polymerization buffer layer 135, and reaching defect D in another barrier layer 140 , Indicates the permeation path of molecules such as water vapor or oxygen through the layer system. Therefore, as shown in FIG. 4B, by providing a barrier layer system having at least one layer stack 130 described herein, the length of the permeation path of molecules such as water vapor or oxygen through the barrier layer system can be increased, so that the barrier layer The barrier properties of the system are improved compared to the traditional barrier layer system. Therefore, it should be understood that by providing another layer stack corresponding to the at least one layer stack 130, the barrier properties of the barrier layer system can be further improved.

According to an example that can be combined with other embodiments described herein, the barrier layer system 100 suitable for use in an optoelectronic device includes a flexible substrate 101, a first barrier layer 110, and a polymer material, and A second barrier layer 120, wherein the first barrier layer and the second barrier layer are configured to have barrier properties against water / oxygen permeation. One of the first barrier layers has a thickness T _BR1 of 50 nm ≤ T _BR1 ≤ 125 nm, and one of the second barrier layers has a thickness T _BR2 of 50 nm ≤ T _BR2 ≤ 125 nm. In addition, the first and second barrier layers are made of SiN _x , and each of the first and second barrier layers has a fracture toughness K _Ic of 4 MPa m0.5 ≤ K _Ic ≤ 6 MPa m ^0.5 . In addition, the barrier layer system 100 includes a polymerization buffer layer 115 including a first barrier layer 110 and a second barrier layer 120. The polymer buffer layer is configured to increase a length of a permeation path between the first barrier layer and the second barrier layer, wherein a buffer layer thickness T _BF of one of the polymer buffer layers is 250 nm ≤ T _BF ≤ 350 nm, and The polymerization buffer layer is made of nHA / EGDA20.

Therefore, considering the embodiments of the barrier layer system described herein, it should be understood that the barrier layer system is quite suitable for manufacturing in a continuous winding process, especially in a continuous winding vacuum deposition process. Manufacturing.

As an example, a schematic diagram of a processing system 300 for manufacturing a barrier layer system according to the embodiments described herein is shown in FIG. 5. In particular, FIG. 5 illustrates a roll-up processing system configured to perform a method for manufacturing a barrier layer system in a continuous roll-up process, which method is described in more detail with reference to FIG. 7 as an example. By.

As exemplarily shown in FIG. 5, the processing system 300 can include at least three chamber portions, such as a first chamber portion 302A, a second chamber portion 302B, and a third chamber portion 302C. In the third chamber portion 302C, one or more deposition sources 630 and a selective etching station 430 can be provided as processing tools. A flexible substrate 101, such as the flexible substrate described herein, is provided on a first roller 764. The first roller 764 has, for example, a winding axis. The flexible substrate is unwound from the first roller 764, as indicated by the direction of substrate movement indicated by arrow 108. A partition wall 701 is provided to partition the first chamber portion 302A and the second chamber portion 302B. The partition wall 701 can further be provided with a plurality of gap gates 740 to allow the flexible substrate 101 to pass therethrough. A vacuum flange 312 is provided between the second chamber portion 302B and the third chamber portion 302C, which can be provided with an opening to receive at least part of the processing tool.

The flexible substrate 101 moves through a plurality of deposition regions provided on a coating drum 710 and corresponding to a position of a deposition source 630. During operation, the coating drum 710 rotates around the shaft, so that the flexible substrate 101 moves in the direction of the arrow 108. According to some embodiments, the flexible substrate 101 is guided from the first roller 764 to the coating drum 710 via one, two, or more rollers, and from the coating drum 710 to the second roller 764 ', the second roller 764 'has a winding shaft, for example, and the flexible substrate 101 is wound on a second roller 764' after its processing.

According to some embodiments, the deposition source 630 can be configured to deposit layers of a layer stack described herein. As an example, the at least one deposition source can be a deposition suitable for the first barrier layer 110, the at least one deposition source can be a deposition suitable for the polymerization buffer layer 115, and the at least one deposition source can be suitable for a second barrier layer Deposition of 120. In addition, at least one deposition source suitable for the deposition of another polymerization buffer layer 135 and at least one deposition source suitable for the deposition of another barrier layer 140 can be provided. In addition, a deposition source suitable for the deposition of the first polymerization buffer layer 114 may be provided.

In some embodiments, the first chamber portion 302A is partitioned into an interleaf chamber unit 302A1 and a substrate chamber unit 302A2. For example, the insertion roller 766/766 'and the insertion roller 305 can be provided as modular components of the processing system 300. The processing system 300 can further include a pre-heating unit 394 to heat the flexible substrate. Furthermore, in addition or in the alternative, a pre-treatment plasma source 392 can be provided, such as a radio frequency (RF) plasma source, to process the substrate using the plasma before entering the third chamber portion 302C. .

According to yet another embodiment that can be combined with other embodiments described herein, an optical measurement unit 494 and / or one or more ionization units 492 can also be selectively provided. The optical measurement unit 494 is used for To evaluate the results of substrate processing, the ionization unit 492 is used to adjust the charges on the substrate.

According to some embodiments, the deposition material may be selected based on the deposition process and subsequent applications of the coated substrate. For example, the deposition material of the deposition source may be selected based on the individual materials of the polymer buffer layer and the barrier layer, as described herein.

Referring exemplarily to FIG. 6, according to an aspect of the present disclosure, a photovoltaic device 150 is provided, which has a barrier layer system 100 according to the embodiments described herein.

Therefore, the barrier layer system described herein can be advantageously used in optical applications, such as the protection of OLEDs. It should be understood, however, that the barrier layer system of the present disclosure can also be used in different applications. As an example, the barrier layer system of the present disclosure can be used in the field of packaging, such as the packaging of foods such as fresh pasta, meat slices, dried fruits, or snacks that are advantageous for a high degree of protection against oxygen. In addition, the barrier system described herein can provide gas barrier and transparent properties to provide product visibility.

Referring to FIG. 7 by way of example, an embodiment of a method 200 for manufacturing a barrier layer system in a continuous roll-to-roll process is described herein. According to an embodiment that can be combined with any of the other embodiments described herein, the method includes (see block 210) providing a flexible substrate to at least one first processing area, at least one second, without breaking a vacuum. A processing area, and at least one third processing area. For example, the first processing region may include a first deposition source, which is suitable for the deposition of the first barrier layer 110. The second processing region may include a deposition source, which is suitable for the deposition of the polymer buffer layer 115. The third processing region may include a deposition source, which is suitable for the deposition of the second barrier layer 120.

Alternatively, for example, for manufacturing a barrier layer system described with reference to FIG. 2, the first processing region may include a first deposition source suitable for the deposition of the first polymer buffer layer 114, and the second processing region may be It includes a deposition source, which is suitable for the deposition of the first barrier layer 110, and the third processing region may include a deposition source, which is suitable for the deposition of the polymer buffer layer 115.

In addition, the method includes (see block 220) depositing a first barrier layer 110 of inorganic material on the flexible substrate 101 in the at least one first processing region, (see block 230) on the at least one second In the processing zone, a polymeric buffer layer 115 of organic material is deposited onto the first barrier layer 110, and (see box 240) in the at least one third processing zone, a second barrier layer 120 of inorganic material is deposited On the polymerization buffer layer 115. Depositing the first barrier layer 110, depositing the polymer buffer layer 115, and depositing the second barrier layer 120 typically include using the same precursor.

Alternatively, the method includes (see block 220) depositing a first polymeric buffer layer 114 of an organic material onto a flexible substrate in the at least one first processing area, (see block 230) in the at least one second processing In the region, a first barrier layer 110 of inorganic material is deposited onto the first polymeric buffer layer 114, and (see block 240) in the at least one third processing region, a polymeric buffer layer 115 of organic material is deposited onto the first A barrier layer 110 is formed. Depositing the first polymer buffer layer 114, depositing the first barrier layer 110, and depositing the polymer buffer layer 115 typically include using the same precursor.

According to embodiments that can be combined with any of the other embodiments described herein, depositing the first barrier layer 110, depositing the first polymer buffer layer 114 and / or depositing the polymer buffer layer 115, and depositing the second barrier layer 120 include Use PECVD process and / or hot wire chemical vapor deposition (HWCVD) process. For example, the first barrier layer 110, and / or the first polymer buffer layer 114, and / or the polymer buffer layer 115, and / or the second barrier layer 120 described herein may be deposited using a low temperature microwave PECVD process.

According to an embodiment that can be combined with any of the other embodiments described herein, using the same precursor includes using a material selected from the group consisting of hexamethyldisiloxane (HMDSO), tetramethylcyclotetrasiloxane ( tetramethyl cyclotetrasiloxane, TOMCAT, C ₄ H ₁₆ O ₄ Si ₄ ), hexamethyldisilazane, HMDSN, [(CH ₃ ) 3Si] ₂ NH), and tetraethyl orthosilicate, TEOS, At least one precursor in a group consisting of Si (OC ₂ H ₅ ) ₄ ).

Further, according to some embodiments capable of being combined with any of the other embodiments described herein, the method may include depositing at least one layer stack 130 described herein. It should be understood that depositing the at least one layer stack 130 includes depositing another polymeric buffer layer 135 and depositing another barrier layer 140. Furthermore, it should be understood that it is possible to use in order to deposit another polymeric buffer layer 135 and to deposit another barrier layer 140 Corresponding adapted sedimentary source. The other polymerization buffer layer 135 can be deposited according to other polymerization buffer layers such as the polymerization buffer layer 115 or the first polymerization buffer layer 114. The other barrier layer 140 can be deposited according to other barrier layers such as the first barrier layer 110 or the second barrier layer 120.

In view of the foregoing, it should be understood that the embodiments described herein are provided for improved barrier layer systems and methods for manufacturing such improved barrier layer systems, particularly for use in photovoltaic devices.

Although the foregoing is about the embodiments of the disclosure, other and further embodiments of the disclosure can be designed without departing from the basic scope of the disclosure. The scope of the disclosure is determined by the scope of the following patent applications.

In particular, this written description uses examples to disclose the present disclosure, including its best mode, and also enables any person with ordinary knowledge in the technical field to which the present invention pertains to implement the subject matter, including the manufacture and use of any device or system, And implement any incorporated methods. Although the foregoing has disclosed various specific embodiments, the technical features in the above embodiments that do not violate each other can be combined with each other. The patentable scope is determined by the claim, and if the scope of the patent application has structural elements that are not different from the literal language of the claim, or if the patent scope includes equivalent structural elements that are not substantially different from the literal language of the claim, Other examples are also intended to be included in the scope of the claim.

100‧‧‧ barrier layer system

101‧‧‧ flexible substrate

108‧‧‧ Arrow

110‧‧‧The first barrier layer

114‧‧‧first polymerization buffer layer

115‧‧‧ polymerization buffer layer

120‧‧‧Second barrier layer

130‧‧‧layer stacking

135‧‧‧Polymerization buffer layer

140‧‧‧ barrier layer

150‧‧‧ Photoelectric device

200‧‧‧ Method

210‧‧‧box

220‧‧‧box

230‧‧‧box

240‧‧‧box

300‧‧‧treatment system

302A‧‧‧First chamber part

302A1‧‧‧Insert Chamber Unit

302A2‧‧‧ substrate chamber unit

302B‧‧‧Second Chamber Section

302C‧‧‧Third chamber section

305‧‧‧ Insert Roller

312‧‧‧vacuum flange

392‧‧‧Pre-treatment plasma source

394‧‧‧pre-heating unit

430‧‧‧etching station

492‧‧‧ionization unit

494‧‧‧Optical measurement unit

630‧‧‧Sedimentary source

701‧‧‧partition wall

710‧‧‧coating drum

740‧‧‧Gap gate

764‧‧‧first roll

764'‧‧‧Second Roller

766‧‧‧Insertion roller

766'‧‧‧ Insert Roller

D‧‧‧ Defect

T _BF ‧‧‧ thickness

T _BF1 ‧‧‧ thickness

T _BR1 ‧‧‧ barrier thickness

T _BR2 ‧‧‧ barrier thickness

In order to be able to understand the details of the above-mentioned features of the disclosure, reference may be made to the embodiments to obtain a more detailed description of the disclosure content simply summarized above. The drawings are related to the embodiments of the present disclosure and are described as follows: Figures 1 and 2 show schematic diagrams of a barrier layer system according to the embodiments described herein. FIG. 3 shows details of a part of a barrier layer system according to the embodiments described herein to describe the function of the aggregation buffer layer. FIG. 4A illustrates a schematic diagram of a barrier layer system according to an embodiment described herein. FIG. 4B shows details of a part of the barrier layer system of FIG. 4A to describe the function of the aggregation buffer layer. FIG. 5 shows a schematic diagram of a processing system for manufacturing a barrier layer system according to an embodiment described herein. FIG. 6 illustrates a photovoltaic device having a barrier layer system according to an embodiment described herein. FIG. 7 shows a flowchart describing a method for manufacturing a barrier layer system in a continuous winding process according to an embodiment described herein.

Claims (20)

A barrier layer system (100) suitable for use in an optoelectronic device includes: a flexible substrate (101); a first barrier layer (110) and a second barrier layer (120), wherein the The first barrier layer (110) and the second barrier layer (120) are configured to have barrier properties against water / oxygen permeation; and a polymer buffer layer (115) is provided on the first barrier layer. Between the first barrier layer (110) and the second barrier layer (120), wherein the polymerization buffer layer (115) is configured to increase the first barrier layer (110) and the second barrier layer (120) The length of a permeation path between. The barrier layer system (100) according to item 1 of the scope of patent application, wherein the thickness T _BF of one of the polymer buffer layers (115) is greater than the thickness T of one of the first barrier layers (110). A thickness ratio TR of _BR1 is 1.5 ≤ TR = T _BF / T _BR1 ≤ 4. The barrier layer system (100) according to item 1 or 2 of the scope of patent application, wherein the thickness T _BR1 of the barrier layer of the first barrier layer (110) is 50 nm ≤ T _BR1 ≤ 300 nm. The barrier layer system (100) according to item 1 or 2 of the scope of patent application, wherein the thickness T _BR2 of one of the second barrier layers (120) is 50 nm ≤ T _BR2 ≤ 300 nm. The barrier layer system (100) according to item 3 of the scope of the patent application, wherein a thickness of the barrier layer T _BR2 of one of the second barrier layers (120) is 50 nm ≤ T _BR2 ≤ 300 nm. The barrier layer system (100) according to item 1 or 2 of the patent application scope, wherein the polymerization buffer layer (115) includes at least one selected from the group consisting of PGMA, EGDA, and nHA / EGDA material. The barrier layer system (100) according to item 3 of the patent application scope, wherein the polymer buffer layer (115) comprises at least one material selected from the group consisting of PGMA, EGDA, and nHA / EGDA. The barrier layer system (100) according to item 4 of the patent application scope, wherein the polymer buffer layer (115) includes at least one material selected from the group consisting of PGMA, EGDA, and nHA / EGDA. The application barrier system (100) of the first two patents, or range, wherein the first barrier layer (110) and the second barrier layer (120) comprises SiN _x, wherein especially the first The barrier layer and the second barrier layer are composed of SiN _x . The barrier layer system (100) according to item 9 of the scope of patent application, wherein the first barrier layer and the second barrier layer are composed of SiN _x . The barrier layer system (100) according to item 1 or 2 of the scope of patent application, wherein one of the first barrier layers (110) has a water vapor transmission rate WVTR of less than 3 × 10 ^-3 g / m ² per day . The barrier layer system (100) according to item 1 or 2 of the scope of patent application, wherein one of the second barrier layers (120) has a water vapor transmission rate WVTR of less than 3 × 10 ^-3 g / m ² per day . The barrier layer system (100) according to item 11 of the scope of patent application, wherein a water vapor transmission rate WVTR of one of the second barrier layers (120) is lower than 3 × 10 ^-3 g / m ² per day. The barrier layer system (100) according to item 1 or 2 of the patent application scope, further comprising at least one layer stack (130) provided on the second barrier layer (120), wherein the at least one layer stack ( 130) includes another polymer buffer layer (135) and another barrier layer (140). The barrier layer system (100) according to item 1 or 2 of the patent application scope, wherein the flexible substrate (101) comprises a material selected from the group consisting of polycarbonate, polyethylene terephthalate, and poly (methyl Methyl acrylate), triethyl cellulose, cycloolefin polymer, and poly (ethylene naphthalate). A barrier layer system (100), suitable for use in an optoelectronic device, includes: a flexible substrate (101) of polymer material; a first barrier layer (110) and a second barrier layer (120) ), Wherein the first barrier layer and the second barrier layer are configured to have barrier properties against water / oxygen permeation, wherein a thickness of the barrier layer T _BR1 of one of the first barrier layers is 50 nm ≤ T _BR1 ≤ 125 nm, where one of the second barrier layers has a thickness T _BR2 of 50 nm ≤ T _BR2 ≤ 125 nm, wherein the first barrier layer and the second barrier layer are made of SiN _x Made, and wherein the first barrier layer and the second barrier layer each have a fracture toughness K _Ic of 4 MPa m ^0.5 ≤ K _Ic ≤ 6 MPa m ^0.5 ; and a polymer buffer layer (115) provided at Between the first barrier layer and the second barrier layer, wherein the polymerization buffer layer is configured to increase a length of a permeation path between the first barrier layer and the second barrier layer, wherein the One of the polymer buffer layers has a buffer layer thickness T _BF of 250 nm ≤ T _BF ≤ 350 nm, and the polymer buffer layer is made of nHA / EGDA20. A photovoltaic device (150) having a barrier layer system (100) according to any one of claims 1 to 16 of the scope of patent application. A method (200) for manufacturing a barrier layer system in a continuous winding process, the method comprising: providing a flexible substrate to at least one first processing area and at least one second without breaking a vacuum; A processing area, and at least a third processing area; in the at least one first processing area, depositing a first barrier layer of an inorganic material on the flexible substrate; in the at least one second processing area, depositing A buffer layer of an organic material is deposited on the first barrier layer; and a second barrier layer of an inorganic material is deposited on the buffer layer in the at least one third processing region; wherein the first barrier layer is deposited , Depositing the buffer layer, and depositing the second barrier layer include using the same precursor. The method (200) for manufacturing a barrier layer system as described in claim 18, wherein depositing the first barrier layer, depositing the buffer layer, and depositing the second barrier layer include using a PECVD process and / Or HWCVD process. The method (200) for manufacturing a barrier layer system as described in claim 18 or 19, wherein using the same precursor includes using a material selected from the group consisting of hexamethyldisilazane (HMDSO), tetramethyl Tetracycline tetrasiloxane (TOMCAT, C ₄ H ₁₆ O ₄ Si ₄ ), hexamethyldisilazane (HMDSN, [(CH ₃ ) ₃ Si] ₂ NH), and tetraethoxysilane (TEOS, At least one precursor in a group consisting of Si (OC ₂ H ₅ ) ₄ ).