TW201835965A - Electron beam device and exposure method, and device manufacturing method - Google Patents

Abstract

This electron beam apparatus comprises an optical device (84) capable of providing a plurality of light beams which can be controlled individually, a projection optical system (86) which directs the plurality of light beams from the optical device onto a photoelectric element (54), and an electron beam optical system (70) which irradiates a wafer (W) with, as a plurality of electron beams, electrons discharged from the photoelectric element (54) as a result of the plurality of light beams being directed onto the photoelectric element, wherein the intensity of at least one of the plurality of light beams directed onto the photoelectric element (54) can be varied.

Description

 Electron beam device and exposure method, and device manufacturing method  

The present invention relates to an electron beam apparatus and an exposure method, and a device manufacturing method, and more particularly to an electron beam apparatus and an exposure method for irradiating light to a photovoltaic element and irradiating an electron beam generated from the photovoltaic element to a target, and using an electron beam A component manufacturing method of a device or an exposure method.

In recent years, a complementary lithography technique using, for example, an ArF excimer laser source, and complementary lithography with a charged particle beam exposure technique (e.g., electron beam exposure technique) has been proposed. In a complementary lithography, a simple line and space pattern is formed by using double patterning or the like in immersion exposure using, for example, an ArF excimer laser light source (hereinafter, appropriately referred to as L/S). pattern). Next, the line pattern is cut or the through holes are formed by exposure using an electron beam.

For complementary lithography, an electron beam exposure apparatus having a multi-beam optical system using, for example, a plurality of blanking apertures for beam on/off can be used. (For example, refer to Patent Documents 1 and 2). However, it is not limited to the shadow aperture method. If it is an electron beam exposure apparatus, there is still a generation of invalid electrons which are not beneficial to the treatment of the target object, and intensity unevenness in the electron beam irradiation region on the target object, to be improved. The point. Further, it is not limited to the exposure apparatus, and the same problem may occur in a device for processing or processing an object by using an electron beam, or a device for processing and processing, or an inspection device.

Advanced technical literature

[Patent Document 1] JP-A-2015-133400

[Patent Document 2] US Patent Application Publication No. 2015/0200074

According to a first aspect of the present invention, an electron beam apparatus is provided which irradiates light to a photovoltaic element and irradiates electrons generated from the photovoltaic element to an object as an electron beam, and includes an optical element capable of individually controllable a plurality of light beams; a first optical system that irradiates a plurality of light beams generated from a plurality of light beams from the optical element to the photovoltaic element; and a second optical system that irradiates the plurality of light beams to the photovoltaic element The electrons emitted from the photovoltaic element are irradiated to the target as a plurality of electron beams; and the intensity of at least one of the plurality of light beams irradiated to the photoelectric element is changeable.

According to a second aspect of the present invention, an electron beam apparatus is provided which irradiates light to a photovoltaic element and irradiates electrons generated from the photovoltaic element as an electron beam to an object, and includes an optical element capable of individually controllable a plurality of light beams; the first optical system irradiates a plurality of light beams generated from a plurality of light beams from the optical element to the photovoltaic element; and the second optical system by irradiating the plurality of light beams to the photoelectric element The electrons emitted from the photovoltaic element are irradiated to the target as a plurality of electron beams; one of the plurality of light beams irradiated to the photovoltaic element may be a part of a plurality of light beams from the optical element The light beam of 2 or more is generated, and the intensity of one beam generated by the beam of 2 or more of the part is changeable.

According to a third aspect of the present invention, there is provided a method for fabricating a component including a lithography process, the lithography process comprising: forming a line and space pattern on a target object, and using any of the first and second aspects The electron beam apparatus performs an operation of cutting the line pattern of the line and space pattern.

According to a fourth aspect of the present invention, there is provided an exposure method for irradiating light to a photovoltaic element, and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: transmitting a plurality of light beams generated from the plurality of light beams The first optical system is irradiated with the operation of the photovoltaic element from an optical element that provides a plurality of individually controllable light beams; and the plurality of light beams are emitted from the photovoltaic element by being irradiated to the photovoltaic element The electrons are irradiated onto the target object from the second optical system as a plurality of electron beams; and the intensity of at least one of the plurality of light beams irradiated to the photoelectric element is changeable.

According to a fifth aspect of the present invention, an exposure method is provided for irradiating light to a photovoltaic element, and irradiating electrons generated from the photovoltaic element as an electron beam to the target object, comprising: transmitting a plurality of light beams generated from the plurality of light beams Actuating the first optical system to the operation of the photovoltaic element, the plurality of optical beams being from an optical element having a plurality of movable reflective elements, providing a plurality of individually controllable light beams; and illuminating the plurality of light beams by the plurality of light beams And the electrons emitted from the photovoltaic element are irradiated to the target object by the plurality of electron beams from the second optical system; and at least one of the plurality of light beams irradiated to the photoelectric element is derived from the plurality of the movable reflections The light of the element is generated, and the intensity can be changed by controlling the plurality of movable reflective elements.

According to a sixth aspect of the present invention, there is provided an exposure method of irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: transmitting a plurality of light beams generated from the plurality of light beams The first optical system is irradiated with the operation of the photovoltaic element from an optical element that provides a plurality of individually controllable light beams; and the plurality of light beams are emitted from the photovoltaic element by being irradiated to the photovoltaic element The electrons are irradiated to the target object from the second optical system as a plurality of electron beams; and one of the plurality of light beams irradiated to the photoelectric element can be more than 2 in a part of the plurality of light beams from the optical element The beam is generated, and the intensity of one beam generated by two or more beams in the portion is changeable.

According to a seventh aspect of the present invention, there is provided a method for fabricating a component including a lithography process, the lithography process comprising: forming a line and space pattern on a target object, and using any of the fourth to sixth aspects The exposure method performs an operation of cutting the line pattern of the line and the space pattern.

10‧‧‧station room

34‧‧‧1st vacuum chamber

50‧‧‧Photoelectric capsules

52‧‧‧ Body Department

54‧‧‧Optoelectronic components

58‧‧‧Shade film

58a‧‧‧Aperture

58b‧‧‧Aperture

60‧‧‧Photoelectric layer

62‧‧‧O-ring

64‧‧‧covering components

66‧‧‧Vacuum Corresponding Actuator

68‧‧‧ Cover storage board

68c‧‧‧round opening

70‧‧‧Electron beam optical system

72‧‧‧2nd vacuum chamber

82‧‧‧Lighting system

82b‧‧‧Forming optical system

84‧‧‧ pattern generator

86‧‧‧Projection optical system

88‧‧‧Laser diode

98‧‧‧Mirror

100‧‧‧Exposure device

102‧‧‧ circuit board

102a‧‧‧ Opening

110‧‧‧Main control unit

112‧‧‧Extraction electrode

134‧‧‧Substrate

136‧‧‧Optoelectronic components

140‧‧‧Optoelectronic components

142‧‧‧Aperture member

144‧‧‧Substrate

EB‧‧‧electron beam

LB‧‧‧Laser beam

W‧‧‧ wafer

WST‧‧‧ Wafer Stage

Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to a first embodiment.

2 is a perspective view showing the electron beam optical unit of FIG. 1 in a cross section.

Figure 3 is a longitudinal section showing an electron beam optical unit.

4(A) to 4(C) are diagrams for explaining the constitution of the photovoltaic capsule and the mounting order of the cover member to the main body portion in the photovoltaic capsule manufacturer's factory (1 to 3).

Fig. 5 is a view (1) for explaining a part of an assembly sequence of an electron beam optical unit.

Fig. 6 is a view (2) for explaining a part of an assembly sequence of an electron beam optical unit.

Fig. 7 is a view (3) for explaining a part of an assembly sequence of an electron beam optical unit.

Fig. 8(A) is a partially omitted longitudinal cross-sectional view showing a photovoltaic element provided in a photovoltaic capsule, and Fig. 8(B) is a partially omitted plan view showing a photovoltaic element.

Fig. 9 is a plan view showing a partially omitted cover storage plate.

Figure 10 is a diagram showing a plurality of pattern projection devices in an optical unit together with an electron beam optical unit.

Fig. 11(A) is a view showing a configuration of a light irradiation device seen from the +X direction, and Fig. 11(B) is a view showing a configuration of a light irradiation device seen from the -Y direction.

Fig. 12(A) is a perspective view showing a light diffraction type light valve, and Fig. 12(B) is a side view showing a light diffraction type light valve.

Figure 13 is a plan view showing the pattern generator.

Fig. 14(A) is a view showing a configuration of an electron beam optical system seen from the +X direction, and Fig. 14(B) is a view showing a configuration of an electron beam optical system seen from the -Y direction.

15(A) to 15(C) are views for explaining correction of the reduction ratio in the X-axis direction and the Y-axis direction using the first electrostatic lens.

Fig. 16 is a perspective view showing the appearance of 45 electron beam optical systems supported on a bottom plate in a suspended state.

Figure 17 is a view showing an irradiation area of a laser beam on a light receiving surface of a pattern generator, an irradiation area of a laser beam on a surface of a photovoltaic element, and an electron beam on an image surface (wafer surface). A diagram of the correspondence relationship between the irradiation areas (exposure areas).

Fig. 18 is a block diagram showing the input/output relationship of the main control device mainly composed of the control system of the exposure device.

Figure 19 is a diagram for explaining the advantages of a rectangular field compared to a square field.

20(A) and 20(B) are diagrams for explaining the correction of the cause of the blurring of the optical system and the shape change (the arc of four corners) of the cut pattern caused by the blurring of the resist.

21(A) and 21(B) are views for explaining correction of a common deformation of a plurality of electron beam optical systems.

Figure 22 is a plan view showing an example of a pattern generator having a rear spare flat strip.

23(A) and 23(B) are views for explaining the correction flat strip row.

24(A) to 24(D) are views showing a configuration example of various types of optical pattern forming units.

Fig. 25(A) is an explanatory view showing a mode in which no aperture is used, and Fig. 25(B) is an explanatory view showing a mode in which an aperture is used.

Fig. 26 is a view schematically showing the configuration of an exposure apparatus according to a second embodiment.

Fig. 27 is a view showing the internal structure of a casing corresponding to one electron beam optical system of the exposure apparatus of the second embodiment.

28(A) to 28(E) are views showing various configuration examples of the aperture-integrated photoelectric element.

Figure 29 is a view for explaining a method of compensating for an image field curvature of an electron beam optical system as an aberration.

Fig. 30 is a view showing an example of a multi-pitch type aperture-integrated photovoltaic element in which an aperture row having a different pitch per one column is formed.

31(A) to 31(C) are views showing the procedure of the cutting pattern for cutting the line pattern in which the pitch is different using the aperture-integrated photoelectric element of Fig. 30.

Fig. 32(A) is a view for explaining a configuration example of an aperture non-integrated photoelectric element, and Figs. 32(B) to 32(E) are diagrams showing various configuration examples of the aperture plate.

Fig. 33 is a view for explaining an embodiment of a method of manufacturing a component.

 "First Embodiment"  

Hereinafter, the first embodiment will be described with reference to Figs. 1 to 25 . Fig. 1 schematically shows the configuration of an exposure apparatus 100 according to the first embodiment. The exposure apparatus 100 includes a plurality of electron beam optical systems as will be described later. Hereinafter, the Z axis is parallel to the optical axis of the electron beam optical system, and the wafer W is moved during exposure in a plane perpendicular to the Z axis in a plane perpendicular to the Z axis. The scanning direction is the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is the X-axis direction, and the directions of the rotation (tilting) around the X-axis, the Y-axis, and the Z-axis are θx, θy, and θz directions, respectively. .

The exposure apparatus 100 includes a stage chamber 10 provided on the clean room floor F, a stage system 14 disposed in the exposure chamber 12 inside the stage chamber 10, and a support frame 14 supported on the floor F on the floor F. The optical system 18 above the stage system 14.

In the stage chamber 10, the illustration of the both end portions in the X-axis direction is omitted in Fig. 1, and the inside of the stage chamber 10 can be evacuated into a vacuum chamber. The stage chamber 10 includes a bottom wall 10a disposed on the floor surface F in parallel with the XY plane, the frame 16 which also serves as the upper wall (top wall) of the stage chamber 10, and the periphery around the bottom wall 10a and the frame 16 is The lower support is a horizontal peripheral wall 10b (in Fig. 1, only one of the +Y side portions is shown). Both the frame 16 and the bottom wall 10a are formed of a rectangular plate member in plan view, and a circular opening 16a is formed in the frame 16 in the vicinity of the central portion thereof. In the opening 16a, the second portion 19b having a small diameter which is a columnar body of the electron beam optical unit 18A having a hierarchical cylindrical shape is inserted from above, and the first portion 19a of the large diameter of the casing 19 is supported from below. Above the frame 16 around the opening 16a. Further, although not shown, the inner peripheral surface of the opening 16a and the second portion 19b of the casing 19 are sealed by a sealing member. A stage system 14 is disposed on the bottom wall 10a of the stage chamber 10.

The stage system 14 includes a stage 22 that is supported by the plurality of vibration-proof members 20 on the bottom wall 10a, and is supported by the weight canceling device 24 on the platform 22 so as to be capable of a predetermined stroke in the X-axis direction and the Y-axis direction, respectively. For example, a wafer stage WST that is possible to move slightly in the remaining four degrees of freedom directions (Z axis, θx, θy, and θz directions) and a stage drive system 26 that drives the wafer stage WST (only one of which is shown in FIG. 1) Referring to Fig. 18) and a position measuring system 28 (not shown in Fig. 1, see Fig. 18) for measuring position information in the six-degree-of-freedom direction of the wafer stage WST. The wafer stage WST adsorbs and holds the wafer W through an electrostatic chuck (not shown) provided thereon.

As shown in FIG. 1, the wafer stage WST is composed of a member having a rectangular frame shape in the XZ cross section, and a yoke portion and a magnet having a rectangular frame shape with an XZ cross section are integrally fixed to the bottom surface of the inner portion (hollow portion) (not The movable member 30a of the motor 30 shown in Fig. 3 is inserted into the stator 30b of the motor 30 formed by the coil unit extending in the Y-axis direction inside the movable portion 30a (hollow portion). The stator 30b is connected at its both ends in the longitudinal direction to an X stage (not shown) that moves on the stage 22 in the X-axis direction. The X stage is a single stage drive mechanism that does not generate magnetic leakage, for example, an X stage drive system 32 (see FIG. 18) that uses a feed screw mechanism of a ball screw, and is integrated with the wafer stage WST in the X-axis direction. The established stroke drive. Further, the X stage drive system 32 may be configured as a single-axis drive mechanism including an ultrasonic motor as a drive source. Either way, the influence of the magnetic field fluctuation caused by the magnetic leakage on the positioning of the electron beam is negligible.

The motor 30 is capable of moving the movable member 30a in the Y-axis direction with a predetermined stroke, for example, at 50 mm, with respect to the stator 30b, and is capable of being slightly driven in the X-axis direction, the Z-axis direction, the θx direction, the θy direction, and the θz direction. Magnetic field type and moving magnetic type motor. In the present embodiment, the motor 30 constitutes a wafer stage drive system that drives the wafer stage WST in a six-degree-of-freedom direction. Hereinafter, the wafer stage drive system and the motor 30 are denoted by the same reference numerals and are referred to as a wafer stage drive system 30.

The X stage driving system 32 and the wafer stage driving system 30 are configured to drive the wafer stage WST in the X-axis direction and the Y-axis direction with a predetermined stroke, for example, 50 mm, and drive the micro-frame in the remaining 4 degrees of freedom (Z). The stage drive system 26 of the axis, θx, θy, and θz directions). The X stage drive system 32 and the wafer stage drive system 30 are controlled by the main control unit 110 (see Fig. 18).

The XZ-shaped inverted U-shaped magnetic sealing member (not shown) is placed over the Y-axis direction of the X stage (not shown) so as to cover both the upper surface of the motor 30 and the X-axis direction. Between a pair of convex parts. This magnetic sealing member is inserted into the hollow portion of the wafer stage WST without hindering the movement of the movable member 30a to the stator 30b. The magnetic sealing member covers the entire length of the movement of the movable portion 30a and the side surface of the motor 30, and is fixed to the X stage. Therefore, the entire range of the movement range of the wafer stage WST and the X stage can be The leakage of the magnetic flux to the upper side (the side of the electron beam optical system to be described later) is substantially surely prevented.

The weight canceling device 24 has a metal bellows type air spring (hereinafter referred to as an air spring) 24a whose upper end is connected to the lower surface of the wafer stage WST, and a bottom plate slider which is formed of a flat plate member connected to the lower end of the air spring 24a. 24b. The bottom plate slider 24b is provided with a bearing portion (not shown) for ejecting air inside the air spring 24a onto the upper surface of the platform 22, and the static bearing surface between the pressurized air and the upper surface of the platform 22 is ejected from the bearing portion. The pressure (pressure in the gap) supports the weight canceling device 24, the wafer stage WST (including the movable member 30a), and the weight of the wafer W. Further, the air spring 24a supplies compressed air through a pipe (not shown) connected to the wafer stage WST. The bottom plate slider 24b is supported on the stage 22 in a non-contact manner by a differential exhaust type aerostatic bearing to prevent air blown from the bearing portion to the stage 22 from leaking to the surroundings (exposure chamber). Further, actually, one of the pair of struts of the air spring 24a is sandwiched in the Y-axis direction on the bottom surface of the wafer stage WST, and the leaf spring provided at the lower end of the pillar is connected to the air spring 24a.

As described above, the optical system 18 includes the electron beam optical unit 18A held by the frame 16 and the optical unit 18B mounted on the electron beam optical unit 18A.

Fig. 2 is a perspective view showing the electron beam optical unit 18A taken along the line. 3 is a longitudinal sectional view of the electron beam optical unit 18A. As shown in the figures, the electron beam optical unit 18A includes a casing 19 having a first portion 19a on the upper side and a second portion 19b on the lower side.

The first portion 19a of the casing 19 is clearly visible from Fig. 2, and its appearance is a columnar shape having a low height. Inside the first portion 19a, for example, as shown in Figs. 1 and 3, a first vacuum chamber 34 is formed. As shown in FIG. 1 and the like, the first vacuum chamber 34 is composed of a first plate 36 which is formed of a circular plate member in a plan view, and a plate member having the same diameter as that of the first plate 36. The second plate (hereinafter referred to as a bottom plate) 38 of the bottom wall and the cylindrical side wall portion 40 surrounding the first plate 36 and the bottom plate 38 are partitioned.

As shown in FIG. 3 and the like, the first plate 36 is formed in a plurality of XY two-dimensional directions at predetermined intervals. Here, for example, seven rows and seven columns are arranged in a matrix of four corners, and 45 (=7) is formed. ×7-4) The through holes 36a are formed in a circular upper and lower direction. In the 45 through holes 36a, as shown in FIG. 3, the main body portion 52 of the photovoltaic capsule described below is inserted from above in a substantially gap-free state.

As shown in FIG. 4(A) and FIG. 5, the photoelectric capsule 50 is provided with an opening 52c formed on one end surface (lower end surface in FIG. 4(A)) and a cylindrical shape having a hollow portion 52b at the other end. (Upper end in Fig. 4(A)) The main body portion 52 of the flange portion 52a and the cover member 64 that can close the opening 52c are provided. The hollow portion 52b is a hollow portion having a shape in which a circular hole is formed at a predetermined depth from the lower end surface of the main body portion 52, and a substantially conical concave portion is formed on the bottom surface of the circular hole. The upper surface of the main body portion 52 including the flange portion 52a has a square shape in plan view, and the center of the square coincides with the central axis of the hollow portion 52b. On the upper surface of the body portion 52, a photovoltaic element 54 is provided at a central portion thereof. The photovoltaic element 54, as shown in the longitudinal cross-sectional view of FIG. 8(A) showing a portion of the photovoltaic element 54, includes a transparent plate member (for example, quartz glass) 56 which is also formed as a vacuum partition wall as the uppermost portion of the body portion 52. The lower surface of the plate member 56 is, for example, a light-shielding film (aperture film) 58 which is formed by vapor deposition of chromium or the like, and a layer of an alkali photoelectric film (photoelectric conversion film) formed on the lower surface side of the plate member 56 and the light-shielding film 58 (alkali photoelectric conversion layer ( Alkali photoelectric layer)) 60. A plurality of apertures 58a are formed in the light shielding film 58. In Fig. 8(A), only one portion of the photovoltaic element 54 is shown. Actually, a plurality of apertures 58a are formed in the light shielding film 58 in a predetermined positional relationship (see Fig. 8(B)). The number of apertures 58a may be the same as the number of multi-beams described below, or the number of beams may be larger. The alkali photo-electric layer 60 is also disposed inside the aperture 58a, and the plate member 56 is in contact with the alkali photo-electric layer 60 at the aperture 58a. In the present embodiment, the plate member 56, the light shielding film 58, and the alkali photoelectric layer 60 are integrally formed to form at least a part of the photovoltaic element 54.

The alkali photoelectrode layer 60 is a polybasic photocathode using two or more kinds of alkali metals. The multi-alkali photocathode has high durability and can produce a photocathode with a quantum efficiency QE of up to 10% due to the photoelectric effect of the green photoelectron in the wavelength band of 500 nm. In the present embodiment, since the alkali photoelectric layer 60 is used as an electron gun that generates an electron beam by the photoelectric effect of transmitting laser light, a high efficiency with a conversion efficiency of 10 [mA/W] is used. Further, in the photovoltaic element 54, the electron emission surface of the alkali photoelectric layer 60 is the lower surface in Fig. 8(A), that is, the surface opposite to the upper surface of the plate member 56.

As shown in FIG. 4(A) and the like, the annular lower end surface of the main body portion 52 is formed with a groove having a predetermined depth and a circular groove in plan view, and a part of the groove is received in the groove. The state is mounted with an O-ring 62 of one type of sealing member.

The cover member 64 is constituted by a circular plate member in plan view similar to the outer periphery (contour) of the lower end surface of the main body portion 52, and is removed in a vacuum as will be described later, and is attached to the main body portion 52 in the previous state. The open end of the body portion 52 is closed (see Fig. 5). That is, since the closed space (hollow portion 52b) inside the main body portion 52 closed by the cover member 64 is a vacuum space, the cover member 64 is pressed against the main body portion 52 by the atmospheric pressure acting on the cover member 64.

Further, a series of processes from the conveyance of the photovoltaic capsules manufactured by the photocapsule manufacturer to the opening of the cover member by the exposure apparatus manufacturer will be described in detail later.

Returning to the description of the electron beam optical unit 18A. As shown in FIG. 5, a lid storage plate 68 that is driven in three directions of the X-axis, Y-axis, and Z-axis directions by a pair of vacuum-corresponding actuators 66 is housed in the first vacuum chamber 34. As shown in FIG. 5, as shown in FIG. 5, a circular hole 68a having a predetermined depth is formed on the upper surface, and a circular hole 68a having a predetermined depth is formed on the upper surface of the circular hole 68a. Through hole 68b. Of course, the number of the circular holes 68a may be different from the number of the photovoltaic capsules 50. Further, the cover member 64 may be supported by the cover receiving plate 38 without providing the circular hole 68a.

In the cover housing plate 68, as shown in FIG. 9 in which a part of the cover housing plate 68 is omitted, an optical path (which may also be referred to as an electron beam path) is finally formed between the circular hole 68a and the circular hole 68a. A circular opening 68c. Further, if the lid storage plate 68 can be retracted from the path of the electron beam, the opening 68c may not be provided.

As shown in FIG. 3 and the like, the bottom plate 38 is formed with 45 recesses 38a having a predetermined depth centered on the central axes of the main body portions 52 of the 45 photo capsules 50. These recessed portions 38a have a predetermined depth from the upper surface of the bottom plate 38, and a through hole 38b having a function of a constricted portion is formed on the inner bottom surface thereof. Hereinafter, the through hole 38b is also referred to as a shrinkage hole 38b. This shrinkage hole portion 38b will be described later.

Below the bottom plate 38, 45 electron beam optical systems 70 whose optical axes AXe are located on the central axes of the body portions 52 of the 45 photoelectric capsules 50 are fixed in a suspended state. Further, the support of the electron beam optical system 70 is not limited to this embodiment, and for example, 45 electron beam optical systems 70 may be supported by a support member different from the bottom plate 38, and the support member may be the second portion 19b of the casing 19. Supported. The electron beam optical system 70 will be described in detail later.

As can be seen from Fig. 1 and Fig. 2, the second portion 19b of the casing 19 has a cylindrical shape with a smaller diameter and a slightly higher height than the first portion. Inside the second portion 19b, a second vacuum chamber 72 in which 45 electron beam optical systems 70 are housed is formed (see FIGS. 1 and 3). As shown in FIGS. 1 and 2, the second vacuum chamber 72 is formed of the bottom plate 38 that constitutes the upper wall (top wall), the cooling plate 74 that forms the bottom wall in a circular thin plate shape, and the diameter of the cooling plate 74. The cylindrical outer peripheral portion 76 having the substantially smaller outer diameter and the cooling plate 74 fixed to the lower end surface thereof is divided. Since the upper surface of the peripheral wall portion 76 is fixed to the lower surface of the bottom plate 38, the first portion 19a and the second portion 19b are integrated, and the casing 19 is constructed accordingly. The cooling plate 74 has a function of suppressing fogging, which will be described later, in addition to the cooling function.

Each of the first vacuum chamber 34 and the second vacuum chamber 72 can be evacuated (see the white arrow in Fig. 2). Further, the second vacuum pump 72 may be used to evacuate the second vacuum chamber 72 differently from the first vacuum pump that evacuates the first vacuum chamber 34, and the first vacuum chamber 34 and the second vacuum chamber may be used using a common vacuum pump. 72 is pumped into a vacuum. Further, the degree of vacuum of the first vacuum chamber 34 and the degree of vacuum of the second vacuum chamber 72 may be different. Further, in order to perform maintenance or the like, one of the first vacuum chamber 34 and the second vacuum chamber 72 may be an atmospheric pressure space, and the other may be a vacuum space. In the present embodiment, the shrinkage cavity portion 38b may be provided to vary the degree of vacuum of the first vacuum chamber 34 from the vacuum degree of the second vacuum chamber 72. However, the first vacuum chamber may be provided without providing the shrinkage cavity portion 38b or the like. 34 and the second vacuum chamber 72 are substantially one vacuum chamber.

As shown in FIG. 1, the optical unit 18B includes a lens barrel (case) 78 mounted on the electron beam optical unit 18A, and 45 light irradiation devices (also referred to as an optical system) housed in the lens barrel 78. 80. The 45 light irradiation devices 80 are arranged in the XY plane in a configuration corresponding to each of the body portions 52 of the 45 photoelectric capsules 50. The inside of the lens barrel 78 is an atmospheric pressure space.

Each of the 45 light irradiation devices 80 is provided corresponding to 45 photoelectric capsules 50 (photoelectric elements 54), and at least one light beam from the light irradiation device 80 is transmitted through the aperture 58a of the photoelectric element 54 to the alkali photoelectric layer (hereinafter, referred to as For the photovoltaic layer) 60. Of course, the number of light illumination devices 80 and the number of photovoltaic capsules 50 may not be equal.

Each of the 45 light illumination devices 80, such as shown in FIG. 10, has an illumination system 82, a pattern generator 84 that produces patterned light, and a projection optical system 86. The pattern generator 84 may also be referred to as a spatial light modulator that spatially modulates the amplitude, phase, and polarization state of light traveling in a predetermined direction. The pattern generator 84 can produce an optical pattern composed of, for example, a light and dark pattern.

In FIGS. 11(A) and 11(B), a configuration example of the light irradiation device 80 is shown together with the main body portion 52 of the corresponding photo capsule 50. Here, Fig. 11(A) shows the configuration seen from the +X direction, and Fig. 11(B) shows the configuration seen from the -Y direction. As shown in FIGS. 11(A) and 11(B), the illumination system 82 includes a light source unit 82a that generates illumination light (laser light) LB, and a long profile in the X-axis direction in which the illumination light LB is 1 or more. A shaping optical system 82b of a rectangular beam.

The light source unit 82a includes a laser diode 92 that continuously oscillates a wavelength near the visible or visible light of the light source, for example, a laser beam having a wavelength of 365 nm, and an AO deflector (also referred to as an AOD) disposed on the optical path of the laser light. Or light deflecting element) 90. The AO deflector 90, here functioning as a switching element, is used to intermittently illuminate the laser light. That is, the light source unit 82a is a light source unit that can intermittently emit laser light (laser beam) LB having a wavelength of 365 nm. Further, the light-emitting ratio of the light source unit 82a can be changed by, for example, controlling the AO deflector 90. The switching element is not limited to the AO deflector, and may be an AOM (Acousto-optic modulation element). In addition, the laser diode 88 itself can be intermittently illuminated.

The shaping optical system 82b includes a diffractive optical element (also referred to as DOE) 92 and an illuminance distribution adjusting element 94 which are sequentially disposed on the optical path of the laser beam (hereinafter, a suitable beam) LB from the light source unit 82a. And a collecting lens 96.

The diffractive optical element 92 is arranged at a predetermined interval in the Y-axis direction when the laser beam from the AO deflector 90 is incident, that is, the predetermined surface of the laser beam on the exit surface side of the diffractive optical element 92. The area in which a plurality of rectangular shapes (in the present embodiment, elongated slits) having a long X-axis direction have a large light intensity distribution converts the in-plane intensity distribution of the laser beam. In the present embodiment, the diffractive optical element 92 is formed by a plurality of cross-sectional rectangular shapes which are arranged at a predetermined interval in the Y-axis direction and which are long in the X-axis direction by the laser beam from the AO deflector 90. Beam (slit beam). In the present embodiment, a number of slit-shaped beams corresponding to the configuration of the pattern generator 84 are generated, and the details are left to be described later. Further, the element that converts the in-plane intensity distribution of the laser beam is not limited to the diffractive optical element, and may be a refracting optical element or a reflective optical element, or may be a spatial light modulator.

The illuminance distribution adjusting element 94 is configured to divide the light receiving surface of the pattern generator 84 into a plurality of divided regions when the complex beam is irradiated onto the pattern generator 84, and individually adjust the illuminance for each of the divided regions. In the present embodiment, the illuminance distribution adjusting element 94 is formed by arranging a plurality of lithium tantalate (lithium tantalate (LT) single crystals) in a plane parallel to the XY plane, and on the incident side thereof. An element composed of a polarizer disposed on the emission side, the crystal having a nonlinear optical effect in which the refractive index changes depending on the applied voltage. In the present embodiment, as shown in the schematic view of the circle in FIG. 11(A), for example, 24 crystals 94a of lithium niobate are arranged in 2 rows and 12 columns in the XY plane at a pitch of 1 mm. The matrix-shaped illuminance distribution adjusting element 94. Symbol 94b denotes an electrode. According to the illuminance distribution adjusting element 94 having the above configuration, since the polarizer on the emission side passes only the predetermined polarization component, the polarization state of the light that is incident on the incident side by the polarized light changes, for example, from the linear polarization to Circularly polarized light changes the intensity of light emitted from the polarizer on the exit side. In this case, the change in the bias state can be made variable by controlling the voltage applied to the crystal. Therefore, by controlling the voltage applied to each crystal, it is possible to adjust the illuminance of each region corresponding to each crystal (the region surrounded by the two-dot chain line in Fig. 13) (see Fig. 11(A)). The illuminance distribution adjusting element 94 is not limited to the use of lithium niobate, and may be formed using other light intensity modulation crystals (electrical optical elements) such as lithium niobate (LN). Further, when the pattern generator 84 or the optical member disposed between the pattern generator 84 and the photo-electric element 54 is used, and the intensity of at least one of the light beams irradiated to the photo-electric element 54 can be adjusted, the illuminance distribution adjustment can be omitted. Element 94. Further, as the illuminance distribution adjusting element 94, a spatial light modulator that spatially modulates the amplitude, phase, and polarization state of the emitted light, for example, a transmissive liquid crystal element or a reflective liquid crystal element, or the like may be used.

In the present embodiment, as described later, since the reflective spatial light modulator is used as the pattern generator 84, the mirror 98 for optical path bending is disposed on the light emitting side below the collecting lens 96. The condensing lens 96 converges a plurality of rectangular beams (slit-like) beams generated by the diffractive optical element 92 in the Y-axis direction, and illuminates the mirror 98. As the condensing lens 96, for example, a cylindrical lens that is long in the X-axis direction or the like can be used. Further, the condensing lens 96 may be composed of a plurality of lenses. Instead of the condensing lens, a reflective optical member such as a poly mirror or a diffractive optical element may be used. Further, the mirror 98 is not limited to a plane mirror and may have a shape having a curvature. When the mirror 98 has a curvature (having a limited focal length), it can also function as a condenser lens 96.

The mirror 98 is disposed at a predetermined angle with respect to the XY plane, and reflects a plurality of slit-shaped beams that are irradiated toward the left obliquely upward in FIG. 11(A).

The pattern generator 84 is disposed on the reflected light path of the plurality of slit-shaped beams reflected by the mirror 98. In detail, the pattern generator 84 is disposed on the surface of the circuit substrate 102 on the -Z side in the Z-axis direction, and the circuit substrate 102 is disposed between the collecting lens 96 and the mirror 98. Here, as shown in FIG. 11(A), the circuit board 102 has an opening 102a as an optical path of a plurality of slit-shaped beams from the collecting lens 96 toward the mirror 98.

In the present embodiment, the pattern generator 84 is constituted by a light diffraction type light valve (GLV (registered trademark)) which is one of the programmable spatial light modulators. As shown in FIGS. 12(A) and 12(B), the light diffraction type light valve GLV is formed on a chip 84a in a scale of several thousand, which is called a "ribbon". A spatial light modulator of a fine structure (hereinafter referred to as a flat belt) 84b of a tantalum nitride film.

The driving principle of GLV is as follows.

By controlling the deflection of the flat belt 84b by the electric side, the GLV can function as a programmable diffraction grating, and can perform dimming and adjustment with high resolution, high speed (responsiveness of 250 Hz to 1 MHz), and high correctness. Change, switch of laser light. GLV is classified as a microelectromechanical system (MEMS). The flat tape 84b is made of an amorphous bismuth film (Si ₃ N ₄ ) which is one of high-temperature ceramics having strong properties in hardness, durability, and chemical stability. Each flat belt has a width of 2 to 4 μm and a length of 100 to 300 μm. The flat belt 84b is covered with an aluminum film and has both functions of a reflecting plate and an electrode. The flat belt is disposed across the common electrode 84c, and when the control voltage from the driver (not shown in FIGS. 12(A) and 12(B)) is supplied to the flat belt 84b, it is deflected toward the substrate 84a by static electricity. . When the control voltage disappears, the flat strip 84b returns to its original state due to the inherent high tension of the tantalum nitride film. That is, the flat belt 84b is one of the movable reflecting members.

In the GLV, there is an active sling which is changed in position by voltage application and a biased sling which is grounded and has a constant position, and all of which are active slings. The latter is used in morphology.

In the present embodiment, the flat ribbon 84b is located on the -Z side, and the ruthenium substrate 84a is located on the +Z side, and is formed of GLV on the surface on the -Z side of the circuit board 102 shown in Fig. 11(A) or the like. Pattern generator 84. A CMOS driver (not shown) for supplying a control voltage to the flat ribbon 84b is provided on the circuit board 102. In the following description, a CMOS driver is referred to as a pattern generator 84 for convenience.

As shown in Fig. 13, the pattern generator 84 used in the present embodiment has a flat belt 84b having, for example, 6,000 flat strip rows 85 in the longitudinal direction (the direction in which the flat strips 84b are arranged) as the X-axis direction. For example, 12 columns are formed on the ruthenium substrate at predetermined intervals in the Y-axis direction. The flat strips 84b of the strip rows 85 are disposed on the common electrode. In the present embodiment, the voltage application and the release of the application are performed at a fixed level, and the switching of the laser light is mainly performed (on/off), and the flat belts 84b are driven. However, since the GLV can adjust the intensity of the diffracted light depending on the applied voltage, fine adjustment of the applied voltage is performed when the intensity of at least a part of the plurality of beams from the pattern generator 84 needs to be adjusted as will be described later. For example, a plurality of beams having different intensities can be generated from the pattern generator 84 when the flat ribbons are incident on the same intensity of light.

In the present embodiment, twelve slit-shaped beams are generated by the diffractive optical element 92, and the twelve beams are transmitted through the illuminance distribution adjusting element 94, the collecting lens 96, and the mirror 98, and are irradiated at the center of each of the flat strips 85. The slit beam LB is long in the X-axis direction. In the present embodiment, the irradiation region of the beam LB with respect to each of the flat belts 84b is a square region. Further, the irradiation area of the beam LB with respect to each of the flat belts 84b may not be a square area. It may be a rectangular area that is long in the X-axis direction or long in the Y-axis direction. In the present embodiment, the irradiation area of the 12 beams on the light receiving surface of the pattern generator 84 (the irradiation area of the illumination system 82) can be said to be Smm in the X-axis direction and Tmm in the Y-axis direction. Rectangular area.

Since the flat strips 84b can be independently controlled, the number of beams having a square cross-section generated by the pattern generator 84 is 6000 x 12 = 72,000, and 72,000 beams can be switched on/off. In the present embodiment, 72000 apertures 58a are formed in the light shielding film 58 of the photovoltaic element 54 of the photo capsule 50 so that 72,000 beams generated by the pattern generator 84 can be individually irradiated. Further, the number of apertures 58a may not be the same as the number of beams that the pattern generator 84 can illuminate, for example, as long as it is illuminated by a photocell 54 that is corresponding to the aperture 58a of each of the 72,000 beams (laser beams). The area on the film 58) is sufficient. That is, as long as the size of the plurality of apertures 58a on the photovoltaic element 54 is smaller than the cross-sectional dimension of the corresponding beam. Further, the pattern generator 84 may have a different number of movable reflective elements (strips 84b) than the number of beams generated by the pattern generator 84. For example, an active flat strip that changes in position due to voltage application and a biased flat strip that is in a grounded position can be used, and one beam is performed by a plurality of (two) movable elements (slings). Switching. Further, the number of pattern generators 84 may not be equal to the number of photovoltaic capsules 50.

As shown in FIGS. 11(A) and 11(B), the projection optical system 86 has an objective lens including lenses 86a and 86b which are sequentially arranged on the optical path of the light beam from the pattern generator 84. A filter 86c is disposed between the lens 86a and the lens 86b. The projection magnification of the projection optical system 86 is, for example, about 1/4. Hereinafter, although the aperture 58a is set to have a rectangular shape, it may be a square shape, or may have other shapes such as a polygon or an ellipse. Here, each of the lenses 86a and 86b may be composed of a plurality of lenses. Further, the projection optical system is not limited to the refractive optical system, and may be a reflective optical system or a catadioptric optical system.

In the present embodiment, the projection optical system 86 projects the light from the pattern generator 84 onto the photovoltaic element 54, and irradiates a plurality of light beams of at least one of the 72000 apertures 58a to the photovoltaic layer 60. That is, the beam from the on of the pattern generator 84 is irradiated to the photovoltaic layer 60 through the corresponding aperture 58a, and the off beam is not irradiated to the corresponding aperture 58a and the photovoltaic layer 60. Further, when an image of a light beam from the pattern generator is imaged on the photovoltaic layer 60 (the surface below or near the plate member 56), the projection optical system 86 may also be referred to as an imaging optical system.

As shown in FIG. 10, the projection optical system 86 is provided with an optical characteristic adjusting device 87 that can adjust the optical characteristics of the projection optical system 86. In the present embodiment, the optical characteristic adjusting device 87 can change the projection magnification (magnification) in at least the X-axis direction by moving an optical element constituting a part of the projection optical system 86, for example, the moving lens 86a. As the optical property adjustment device 87, for example, a device that changes the air pressure in the airtight space formed between the plurality of lenses constituting the projection optical system 86 can be used. Further, as the optical property adjustment device 87, a device that deforms the optical member constituting the projection optical system 86 or a device that imparts heat distribution to the optical member constituting the projection optical system 86 may be used. Further, in Fig. 10, only one light irradiation device 80 is shown in the drawing, and the optical property adjustment device 87 is provided. Actually, the optical property adjustment device 87 is provided in all of the 45 light irradiation devices 80. 45 The optical characteristic adjustment device 87 is controlled by the control unit 11 in accordance with an instruction from the main control device 110 (see Fig. 18).

Further, a intensity modulation element capable of changing the intensity of at least one of the plurality of beams generated by the pattern generator 84 and irradiated to the photovoltaic layer 60 may be provided inside the projection optical system 86. The intensity of the plurality of beams that are incident on the photovoltaic layer 60 is altered to include an action that zeros the intensity of a portion of the plurality of beams. Further, the projection optical system 86 may include a phase modulation element, a polarization modulation element, or the like that can change the phase or polarization of at least one of the plurality of beams irradiated to the photovoltaic layer 60.

As can be seen from Fig. 11(A), in the present embodiment, the optical axis AXi of the optical system of the illumination system 82 and the optical axis of the projection optical system 86 (which coincides with the optical axis of the final optical element lens 86b) AXo are both The Z axis is parallel, but is offset by a predetermined distance (offset) in the Y-axis direction. Of course, the optical axis AXi of the optical system of the illumination system 82 and the optical axis AXo of the projection optical system may be non-parallel.

In Fig. 14 (A) and Fig. 14 (B), one configuration example of the electron beam optical system 70 and the main body portion 52 of the corresponding photo capsule 50 are shown together. 14(A) shows the configuration seen from the +X direction, and FIG. 14(B) shows the configuration seen from the -Y direction. As shown in FIGS. 14(A) and 14(B), the electron beam optical system 70 has an objective lens composed of a lens barrel 104 and one pair of electromagnetic lenses 70a and 70b held by the lens barrel 104, and an electrostatic multipole 70c. . The objective lens and the electrostatic multipole 70c of the electron beam optical system 70 are disposed on the beam path of electrons (plural electron beams EB) emitted by photoelectric conversion of the photovoltaic element 54 by irradiating the complex beam LB to the photovoltaic element 54. The pair of electromagnetic lenses 70a and 70b are disposed in the vicinity of the upper end portion and the lower end portion of the lens barrel 104, respectively, and are separated in the vertical direction. An electrostatic multipole 70c is disposed between the pair of electromagnetic lenses 70a and 70b. The electrostatic multipole 70c is disposed at the waist portion of the beam path of the electron beam EB which is reduced in diameter by the objective lens. Therefore, the complex electron beams EB passing through the electrostatic multipole 70c are mutually exclusive due to the Coulomb force acting on each other, so that the magnification changes.

Therefore, in the present embodiment, the first electrostatic lens 70c _{1 for} XY magnification correction and the irradiation position control (and the irradiation position offset correction) of the beam, that is, the projection position adjustment (and the projection position shift) of the optical pattern are provided. The electrostatic multipole 70c of the second electrostatic lens 70c ₂ used in the correction is disposed inside the electron beam optical system 70. The first electrostatic lens 70c ₁ is corrected at a high speed and individually corrected in the X-axis direction and the Y-axis direction, for example, as shown in FIG. 15(A). However, as shown in FIG. 15(B), the first electrostatic lens 70c ₁ is a correction target which is caused by a change in the total current amount due to the Coulomb effect, and is caused by the factor shown in FIG. 15(C). The change in magnification caused by the local Coulomb effect is not corrected. The Coulomb effect generated thereon is corrected by using the first electrostatic lens 70c ₁ on the premise that the pattern generation rule generated by the magnification change is not shown as shown in Fig. 15(C).

Further, the second electrostatic lens 70c ₂ corrects the irradiation position shift of the beam due to various vibrations or the like (the pixel of the optical pattern, that is, the projection position of the cutting pattern to be described later is shifted). The second electrostatic lens 70c _{2 is} used for controlling the deflection of the beam when the beam is subjected to the tracking control of the wafer W during exposure, that is, also for the irradiation position control of the beam. In addition, when the reduction magnification is corrected using a portion other than the electron beam optical system 70, for example, by using the projection optical system 86 or the like, the electron beam deflection control may be used instead of the electrostatic multipole 70c. The electrostatic lens formed by the electrostatic lens is deflected toward the lens.

The reduction ratio of the electron beam optical system 70 is designed to be, for example, 1/50 in a state where the magnification correction is not performed, and may of course be 1/30, 1/20 or the like.

Fig. 16 is a perspective view showing the appearance of 45 electron beam optical systems 70 supported by the bottom plate 38 in a suspended state.

As shown in FIGS. 14(A) and 14(B), an electron beam outlet 104a is formed at the emission end of the lens barrel 104, and a reflected electron detecting device 106 is disposed below the outlet 104a portion. The reflected electron detecting device 106 is disposed inside the circular (or rectangular) opening 74a formed by the cooling plate 74 opposite to the outlet 104a. Specifically, the optical axis AXe of the electron beam optical system 70 (which coincides with the central axis of the photocathode 50 and the optical axis AXo of the projection optical system 86 (see FIG. 11(A))) on both sides in the X-axis direction A pair of reflected electron detecting devices 106x ₁ , 106x _{2 are provided} . Further, a pair of reflected electron detecting devices 106y ₁ and 106y _{2 are} provided on both sides of the Y-axis direction via the optical axis Axe. Further, each of the two pairs of reflected electron detecting devices 106 is configured by, for example, a semiconductor detector, and detects a reflection component generated from a detection target mark such as an alignment mark or a reference mark on the wafer, where the reflected electrons are detected. The detection signal corresponding to the detected reflected electrons is sent to the signal processing device 108 (see Fig. 18). The signal processing device 108 amplifies the detection signals of the plurality of reflected electron detecting devices 106 by an amplifier (not shown), performs signal processing, and sends the processing result to the main control device 110 (see FIG. 18). Further, the reflected electron detecting device 106 may be provided only in one (at least one) of the 45 electron beam optical systems 70, or may not be provided.

The reflected electron detecting devices 106 _x1 , 106 _x2 , 106 _y1 , 106 _y2 may be fixed to the lens barrel 104 or may be attached to the cooling plate 74.

In the cooling plate 74, there are 45 openings 74a which are opposite to the outlet 104a of the lens barrel 104 of the 45 electron beam optical system 70, and two pairs of reflected electron detecting means 106 are disposed in the opening 74a (refer to FIG. 2). .

As shown in FIGS. 14(A) and 14(B), the bottom hole 38 has the above-mentioned shrinkage hole portion 38b formed on the optical axis AXe. The shrinkage hole portion 38b is formed on the inner bottom surface of the recessed portion 38a having a circular shape (or rectangular shape) formed at a predetermined depth on the bottom plate 38, and is formed of a rectangular hole elongated in the X-axis direction. Further, on the optical axis AXe, the center of the arrangement area of the plurality of apertures 58a provided on the upper side of the photovoltaic layer 60 (here, coincident with the central axis of the main body portion 52 of the photo capsule 50) substantially coincides. As shown in FIG. 2, the shrinkage hole portion 38b is formed on the bottom plate 38 in an individual direction with the optical axis AXe of the 45 electron beam optical systems 70.

Further, between the bottom plate 38 and the photovoltaic element 54, an extraction electrode 112 for accelerating electrons emitted from the photovoltaic layer 60 is disposed. Further, in FIGS. 14(A) and 14(B), the drawing electrode 112 may be provided around the circular opening 68c of the lid housing plate 68, for example. Of course, the extraction electrode 112 may be provided in another member different from the cover accommodation plate 68.

In the exposure apparatus 100, the opening portion for maintenance is provided in the lens barrel 78, the first portion 19a of the casing 19, the second portion 19b, and the stage chamber 10.

Next, an example of the assembly flow of the exposure apparatus 100 will be described focusing on the flow of the photoelectric capsules manufactured by the photo capsule manufacturer and the series of steps until the exposure device manufacturer opens the lid member.

First, in the vacuum chamber 120 of the factory of the photo capsule manufacturer, as shown by the upward white arrow in Fig. 4(A), the cover member 64 is moved upward to close the opening 52c, so that the cover member 64 is in contact with the photoelectric The body portion 52 of the capsule 50. Next, as shown in FIG. 4(B), a spring or other force member 122 is used in the vacuum chamber 120 to apply (press) the upward force to the cover member 64. At this time, the O-ring 62 provided at the lower end surface of the main body portion 52 is completely crushed by the action of the pressing force. Then, when the inside of the vacuum chamber 120 is opened to the atmosphere in a state where the lid member 64 is pressed, since the inside of the photo capsule 50 is a vacuum, the lid member 64 is pressed against the body portion 52 due to the atmospheric pressure, and the force-applying member is released. 122 pressure. In Fig. 4(C), the state in which the pressing is released is shown. In the state of FIG. 4(C), the main body portion 52 and the lid member 64 are integrated to constitute the photo capsule 50 (the photo capsule 50 is sealed at atmospheric pressure). In the above manner, a plurality of (at least 45) photovoltaic capsules 50 are transported to the factory of the exposure apparatus manufacturer while maintaining the state of Fig. 4(C). Further, an annular groove may be formed in a surface of the cover member 64 opposed to the body portion 52 to be mounted in a state in which the groove is buried in a portion of the O-ring 62. Further, when the lid member 64 is brought into contact with the main body portion 52, the vacuum state of the internal space of the photocavity can be maintained in the air space, and the sealing member such as the O-ring 62 may not be provided.

In the factory of the exposure apparatus manufacturer, 45 photo capsules 50 are transferred into the clean room, and as shown by the downward arrow in Fig. 5, the first board of the electron beam optical unit 18A assembled to the frame 16 is inserted from above. Each of the 45 through holes 36a formed in 36 is attached to the first plate 36. In this anti-group state, in the 45 through holes 36a, the main body portion 52 of the photo capsule 50 is inserted with almost no gap. Further, at this time, in the cover receiving plate 68, 45 circular holes 68a of a predetermined depth are positioned below the 45 photoelectric capsules 50, and a height position of a predetermined gap exists between the cover member 64 and the upper surface of the cover receiving plate 68. .

Further, before the assembly of the frame 16 by the electron beam optical unit 18A, the assembly of the stage system 14 and the loading of the stage system 14 into the stage chamber 10 and the necessity of the stage system 14 are performed. Adjustments, etc.

After the photovoltaic capsule 50 is assembled to the first plate 36, the cover receiving plate 68 is driven upward by the vacuum corresponding actuator 66 as shown in Fig. 6, until one of the cover members 64 enters the cover storage plate 68. The position of the inside of the circular hole 68a of a predetermined depth.

Next, the inside of the first portion 19a of the casing 19 and the inside of the second portion 19b are simultaneously evacuated (see Fig. 2). Further, in parallel with this, the inside of the stage chamber 10 is evacuated.

At this time, the inside of the first portion 19a of the casing 19 is evacuated, and the inside of the first portion 19a becomes the first vacuum chamber 34 until the high vacuum state is reached at the same level as that inside the photovoltaic capsule 50 (refer to the figure). 7). At this time, since the air pressure inside the photoelectric capsule 50 corresponds to the air pressure of the outside (the inside of the first portion 19a), as shown in FIG. 7, the cover member 64 is separated from the main body portion 52 by its own weight, and is completely accommodated in the circular hole. The interior of 68a. Further, in a state where the evacuation inside the first portion 19a of the casing 19 is completed, the plurality of photovoltaic capsules 50 respectively have the photovoltaic elements 54, that is, the first vacuum chamber 34 and the outside thereof (the outside of the casing 19) The function of the partition wall (vacuum partition) of space. The outer side of the first vacuum chamber 34 is a positive pressure of atmospheric pressure or a slightly lower atmospheric pressure.

On the other hand, although the inside of the second portion 19b of the casing 19 can be evacuated to a high vacuum state which is the same level as the first portion 19a, vacuum can be drawn until the degree of vacuum is lower than that of the first portion 19a ( Medium pressure state with high pressure). In the present embodiment, since the inside of the first portion 19a and the inside of the second portion 19b are substantially separated by the crater portion 38b, such a state is possible. After the evacuation inside the second portion 19b is completed, the inside of the second portion 19a becomes the second vacuum chamber 72. When the inside of the second portion 19b is evacuated to a medium vacuum state, the time required for vacuuming can be shortened. The inside of the stage chamber 10 is evacuated to the internal phase of the second portion 19b.

After the vacuuming of the first portion 19b is completed, the lid accommodating plate 68 is driven in the X-axis direction and the Y-axis direction (and the Z-axis direction) by the vacuum corresponding actuator 66, and 45 circles formed in the lid accommodating plate 68 are formed. The shaped openings 68c are respectively positioned on the optical axis AXe of the 45 electron beam optical systems 70. The state in which the circular opening 68c is positioned on the optical axis AXe in this manner is shown in FIG. Thereafter, necessary adjustment is performed to end the assembly of the electron beam optical unit 18A.

Next, as shown in FIG. 1, the optical unit 18B previously assembled separately is mounted on the assembled electron beam optical unit 18A (first board 36). At this time, the optical unit 18B is configured such that each of the 45 light irradiation devices 80 inside the lens barrel 78 is disposed corresponding to each of the 45 photoelectric elements 54, that is, the optical axis AXo of the projection optical system 86 and The state in which the optical axis AXe of the electron beam optical system 70 is substantially uniform is mounted. Next, necessary adjustments related to the optical unit 18B, necessary adjustment between the electron beam optical unit 18A and the optical unit 18B, and mechanical connection between the optical unit 18B and the electron beam optical unit 18A, connection of circuit wiring, and pneumatic circuit are performed. The assembly of the exposure apparatus 100 is completed by piping connection or the like.

Further, the necessary adjustments of the above-described respective sections include adjustments for achieving optical precision for various optical systems, adjustments for achieving mechanical precision for various mechanical systems, and adjustments for achieving electrical accuracy for various electrical systems.

As is apparent from the above description, the exposure apparatus 100 of the present embodiment is irradiated inside the rectangular region having the length Smm in the X-axis direction and the length Tmm in the Y-axis direction on the light receiving surface of the pattern generator 84 as shown in FIG. The beam is irradiated, whereby the light from the pattern generator 84 is irradiated onto the photovoltaic element 54 by the projection optical system 86 having a reduction ratio of 1/4, and the electron beam generated by the irradiation is transmitted through the reduction magnification of 1/50. The electron beam optical system 70 illuminates a rectangular area (field of exposure) on the image plane (aligned to the wafer surface of the image plane). In other words, the exposure apparatus 100 of the present embodiment includes the light irradiation device 80 (projection optical system 86), the photoelectric element 54 corresponding thereto, and the electron beam optical system 70 corresponding thereto, and constitutes a straight reduction ratio of 1/200. The multibeam optical system 200 (see FIG. 18) has 45 arrays in the XY plane in the aforementioned matrix configuration. Therefore, the optical system of the exposure apparatus 100 of the present embodiment is a multi-column electron beam optical system having 45 reduction optical systems of a reduction ratio of 1/200.

Further, in the exposure apparatus 100, a 300-cm-diameter wafer having a diameter of 300 cm is used as an exposure target, and 45 electron beam optical systems 70 are disposed opposite to the wafer. Therefore, the arrangement interval of the optical axis Axe of the electron beam optical system 70 is as follows. For example, it is set to 43 mm. In this way, the exposure area of one electron beam optical system 70 is up to a rectangular area of 43 mm × 43 mm. Therefore, as described above, the movement distance of the wafer stage WST in the X-axis direction and the Y-axis direction is 50 mm. That is enough. Further, the number of the electron beam optical systems 70 is not limited to 45, and can be determined depending on the wafer diameter, the stroke of the wafer stage WST, and the like.

Fig. 18 is a block diagram showing the input/output relationship of the main control unit 110 mainly composed of the control system of the exposure apparatus 100. The main control device 110 includes a microcomputer or the like, and collectively controls the respective components of the exposure device 100 including the respective portions shown in FIG. In Fig. 18, the light irradiation device 80 connected to the control unit 11 includes a laser diode 88, an AO deflector 90, a diffractive optical element 92, and an illuminance controlled by the control unit 11 in accordance with an instruction from the main control device 110. Distribution adjustment element 94. Further, the electron beam optical system 70 connected to the control unit 11 includes one of the pair of electromagnetic lenses 70a and 70b and the electrostatic multipole 70c (the first electrostatic lens 70c ₁ and the control unit 11 according to an instruction from the main control unit 110). The second electrostatic lens 70c ₂ ). In addition, in FIG. 18, reference numeral 500 denotes an exposure unit including the above-described multibeam optical system 200, control unit 11, reflected electron detecting devices _106x1 , _106x2 , _106y1 , _106y2 , and signal processing device 108. In the exposure apparatus 100, a 45-unit exposure unit 500 is provided.

Further, in the exposure apparatus 100, a non-square, rectangular (rectangular) exposure field (hereinafter, appropriately referred to as a rectangular field) RF is used.

In Fig. 19, in a circle showing an effective area (aberration effective area) of the diameter D of the electron beam optical system, a square exposure field (hereinafter, simply referred to as a square field) SF and a rectangular field RF are shown. As is clear from Fig. 19, the square field SF is preferable if the effective area of the electron beam optical system is to be used to the utmost. However, in the case of the square field SF, as shown in Figure 19, the field width will be 30% (1/ 2) Loss of degree. For example, if the length of the short side is t (=T/50) mm and the length of the long side is s (=S/50) mm, if it is a rectangular field RF having an aspect ratio of t/s=11/60, The effective area is roughly the field width. This is a very big advantage in multi-column. In addition to this, there is an advantage that the sensitivity of the mark detection when the alignment mark is detected can be improved. Regardless of the shape of the field, the total amount of electrons that illuminate the field is the same, so the current density of the rectangular field is larger than that of the square field, so that even a small area of the mark on the wafer can be adequately Detection sensitivity is detected. Also, the aberration management of the rectangular field is easier than the square field. In addition, the practical aspect ratio t/s is 1/12 to 1/4.

In Fig. 19, any of the exposure fields set to the square field SF and the rectangular field RF includes the optical axis AXe of the electron beam optical system. However, the present invention is not limited thereto, and the exposure field may be set in the aberration effective region without including the optical axis Axe. Further, the exposure field is set to a shape other than a rectangle (including a square), for example, an arc shape.

Next, the dose control performed in the exposure of the wafer W by the exposure apparatus 100 of this embodiment will be described.

In the illuminance unevenness in the exposure field, the main control device 110 uses the illuminance distribution adjusting element 94 at the time of exposure described later, and variably controls the polarization state by the control of the applied voltage at each crystallization. Each region of the crystal (corresponding to the region on the light-receiving surface of the pattern generator 84 of each crystal) controls the light intensity (illuminance), and as a result, the in-plane illuminance distribution on the electron-emitting surface of the photovoltaic layer 60 is performed. And adjustment of the illuminance distribution in the exposure field RF on the wafer surface corresponding thereto. That is, the intensity of each of the plurality of electron beams irradiated to the exposure field RF is appropriately and correctly adjusted. Further, in the exposure apparatus 100 of the present embodiment, since the pattern generator 84 is formed of GLV, halftones can be generated by the pattern generator 84 itself. The main control device 110 can also perform the in-plane illuminance distribution on the electron emitting surface of the photovoltaic layer 60 and the exposure field on the wafer surface corresponding thereto by the intensity adjustment of the respective light beams irradiated to the photovoltaic layer 60. The adjustment of the RF internal illumination distribution, that is, the dose control. Of course, the main control device 110 can use the illuminance distribution adjusting element 94 and the pattern generator 84 in combination to adjust the in-plane illuminance distribution of the photovoltaic layer 60 on the electron emitting surface.

Further, on the premise that the in-plane illuminance distribution on the electron emission surface of the photovoltaic layer 60 is adjusted, the intensity of the electron beams generated from the electron emission surface of the photovoltaic layer 60 by photoelectric conversion (the illuminance of the electron beam, the electron beam) The electric current is adjusted in substantially the same manner as the intensity of the multiple beams generated by the pattern generator 84 and irradiated onto the photovoltaic layer 60. This beam intensity adjustment can be performed within illumination system 82, by pattern generator 84, or within projection optics 86. However, the intensity (the illuminance of the electron beam and the amount of the electron beam current) of the plurality of electron beams generated from the electron emission surface of the photovoltaic layer 60 by photoelectric conversion may be made to at least a part of the beam and other beams. In a different way, the intensity of the plurality of beams is adjusted.

Moreover, the resist layer formed on the wafer is affected not only by the in-plane illuminance distribution on the electron emitting surface of the photovoltaic layer 60, but also by other factors such as front side scattering, back scattering or fogging. The impact.

Here, the term "backscattering" refers to a phenomenon in which electrons in a resist layer incident on a surface of a wafer are scattered in a resist layer during reaching a surface of a wafer, and the term "backscattering" means passing through a resist layer. The electrons that reach the surface of the wafer are scattered on the surface of the wafer or inside and are again incident into the resist layer, scattering to the surrounding phenomenon. Further, the term "fogging" refers to a phenomenon in which reflected electrons from the surface of the resist layer are reflected, for example, on the bottom surface of the cooling plate 74 to increase the dose around the surface.

As can be seen from the above description, since the range affected by the forward scattering is narrower than the backscattering and the fogging, the exposure apparatus 100 uses a different correction method for the forward scattering, the backscattering, and the fogging.

In order to reduce the influence of the forward scattering component (PEC (Proximity Effect Correction), the main control device 110 predicts the influence of the forward scattering component, and transmits the pattern generator 84 (and/or the illuminance distribution adjusting element) through the control unit 11 94) Adjustment of the illuminance distribution in the plane.

On the other hand, the main control device 110 transmits the illuminance distribution adjusting element 94 to a certain extent by the control unit 11 in order to reduce the influence of the backscattering component and the FEC (Fogging Effect Correction) to reduce the influence of fogging. The spatial frequency is adjusted for the in-plane illumination distribution.

Incidentally, the exposure apparatus 100 of the present embodiment is used for, for example, complementary lithography. In this case, for example, in the immersion exposure using an ArF excimer laser light source, a wafer having an L/S pattern formed by use of double patterning or the like is used as an exposure target, and is used for performing The formation of the cut pattern of the cut of the line pattern. In the exposure apparatus 100, a cutting pattern corresponding to each of the 72000 apertures 58a formed in the light shielding film 58 of the photovoltaic element 54 can be formed.

The processing flow of the wafer in this embodiment is as follows.

First, the pre-exposed wafer W coated with the electron beam resist is placed on the wafer stage WST in the stage chamber 10, and is adsorbed by an electrostatic chuck.

Corresponding to each of, for example, 45 shot regions formed on the wafer W on the wafer stage WST, at least one alignment mark formed on the street line is irradiated from each electron beam optical system 70 In the electron beam, at least one of the reflected electron detecting devices 106 _x1 , 106 _x2 , 106 _y1 , and 106 _y2 detects reflected electrons from at least one of the alignment marks, and performs full-point alignment measurement of the wafer W ₁ . alignment measurement result of the whole point of the plurality of shot areas on _a wafer W, 45 started the exposure unit 500 (multi-beam optical system 200) of exposure. For example, in the case of complementary lithography, a plurality of beams (electrons emitted from each of the multi-beam optical systems 200) are used in a cutting pattern formed on the wafer W in an L/S pattern having a periodic direction in the X-axis direction. At the time of formation of the beam, the irradiation timing (on/off) of each beam is controlled while scanning the wafer W (wafer stage WST) in the Y-axis direction. Further, it is also possible to detect the alignment marks corresponding to the partial irradiation regions of the wafer W without performing the full-point alignment measurement, and perform exposure of the 45 irradiation regions based on the results. Further, in the present embodiment, the number of the exposure units 500 is the same as the number of the irradiation regions, but may be different. For example, the number of exposure units 500 can be less than the number of illumination areas.

Next, the exposure order of the pattern generator 84 is used. Here, it is assumed that a pixel area of a plurality of 10 nm squares (which coincide with the irradiation area of the beam transmitted through the aperture 58a) adjacent to each other in an XY two-dimensional arrangement in a certain region on the wafer is exposed for all the pixels. The situation is explained. Here, as the flat strip row, 12 columns of A, B, C, ..., K, and L are provided.

Focus on the sling column A as explained below. The exposure of the squaring column A is started for a continuous 6000 pixel region of a row (assuming the Kth row) arranged on the wafer in the X-axis direction. At the point in time when the exposure begins, the beam reflected by the squall line A is assumed to be at the home position. After the start of the exposure, the scanning of the +W direction (or the -Y direction) of the wafer W is performed while the beam is deflected in the +Y direction (or the -Y direction) while continuing exposure to the same 6000 pixel region. Next, for example, when the exposure of the 6000 pixel region is completed at time Ta[s], the wafer stage WST is advanced at a speed of V [nm/s], for example, by Ta x V [nm]. Here, for the sake of convenience, it is assumed that Ta × V = 96 [nm].

Next, the beam is returned to the starting point while the wafer stage WST is scanning at a speed V for 24 nm in the +Y direction. At this point, the beam is off to avoid the actual exposure of the resist on the wafer. The off of this beam is performed using the AO deflector 90.

At this time, since the wafer stage WST advances 120 nm from the exposure start time point to the +Y direction, the continuous 6000 pixel region of the (K+12)th row and the 6000 pixel region of the Kth row at the exposure start time point. In the same position.

Therefore, in the same manner, the 6,000 pixel regions of the (K+12)th row are exposed while the beam is biased toward the wafer stage WST.

In fact, in parallel with the exposure of the 6000 pixel region of the Kth line, the 6000th pixel of each of the (K+1)th to the (K+11)th rows, by the squash columns B, C, ..... ., K, L and exposure.

In this manner, for a region having a width of 60 μm in the X-axis direction on the wafer, exposure (scanning exposure) can be performed while scanning the wafer stage WST in the Y-axis direction, and if the wafer stage WST is oriented in the X-axis direction When the same scanning exposure is performed at 60 μm, the width region of the length of 60 μm adjacent in the X-axis direction can be exposed. Therefore, by repeating the scanning exposure and the step of the wafer stage in the X-axis direction, the exposure of one irradiation area on the wafer can be performed by one exposure unit 500. Further, in practice, since 45 exposure units 500 can be used to expose the exposure of the different irradiation regions on the wafer in parallel, the entire exposure of the wafer can be performed.

Moreover, since the exposure apparatus 100 is used for complementary lithography for forming a dicing pattern formed on the wafer W, for example, an L/S pattern having a periodic direction in the X-axis direction, the pattern generator 84 can be used. The 72000 beams reflected by any of the flat strips 84b are on to form a cut pattern. In this case, 72,000 beams can be simultaneously turned on, or not.

In the exposure apparatus 100 of the present embodiment, in the scanning exposure of the wafer W in accordance with the exposure sequence, the main control unit 110 controls the stage driving system 26 and transmits the exposure unit 500 based on the measured value of the position measuring system 28. The control unit 11 controls the light irradiation device 80 and the electron beam optical system 70. At this time, according to the instruction of the main control device 110, the above-described dose control is performed by the control unit 11 as needed.

The dose control described above is also controlled by the dose control by controlling the illuminance distribution adjusting element 94 or the pattern generator 84, or the illuminance distribution adjusting element 94 and the pattern generator 84, so that it can also be said to be dynamic dose control. .

However, the exposure apparatus 100 is not limited thereto, and the following dose control may be employed.

For example, there may be blur caused by the optical system and/or due to resist blur, and as shown in FIG. 20(A), a square (or rectangular) cut pattern (resist pattern) on the wafer should be used. The CP is, for example, a case where a corner is cut into a circular arc pattern CP'. In the present embodiment, as shown in FIG. 20(B), the light beam may be irradiated onto the photovoltaic layer 60 through the non-rectangular aperture 58a' formed in the auxiliary pattern 58c provided at the four corners of the aperture 58a of the light shielding film 58. The electron beam generated by the photoelectric conversion is irradiated onto the wafer through the electron beam optical system 70, whereby an irradiation region of the electron beam having a shape different from that of the non-rectangular aperture 58a' is formed on the wafer. In this case, the shape of the irradiation region of the electron beam may be the same as or different from the shape of the cutting pattern CP to be formed on the wafer. For example, in the case where the influence of the resist blur can be almost ignored, the shape of the aperture 58a' is determined in such a manner that the shape of the irradiation region of the electron beam is substantially the same as the shape of the desired cutting pattern CP (for example, a rectangle or a square). Just fine. The use of aperture 58a' in this case may not be considered a dose control.

Here, in the aperture 58a', it is not necessary to provide the auxiliary pattern 58c at all four corners of the rectangular aperture 58a, and the auxiliary pattern 58c may be provided only at at least a part of the four corners of the aperture 58a. Further, the auxiliary pattern 58c may be provided only at all four corners of the rectangular aperture 58a at a portion of the plurality of apertures 58a' formed in the light shielding film 58. Further, one of the plurality of apertures formed in the light shielding film 58 may be the aperture 58a', and the rest may be the aperture 58a. That is, it is not necessary to make all the shapes of the plurality of apertures 58a' formed in the light shielding film 58 the same. Further, although the shape, size, and the like of the aperture can be designed based on the simulation results, it is preferable to optimize them according to actual exposure results, for example, according to the characteristics of the electron beam optical system 70. In any case, the shape of each of the apertures is determined such that the corner portion of the irradiation region on the wafer (target object) is prevented from becoming an arc. Further, the influence of the forward scattering component can be alleviated by the aperture shape.

Further, for example, in the case where the blurring of the cause of the optical system can be almost ignored, the shape of the aperture 58a' and the shape of the irradiation region of the electron beam can be the same.

In the exposure apparatus 100, although there are a plurality of, for example, 45 electron beam optical systems 70, since the 45 electron beam optical systems 70 are manufactured by the same process to satisfy the same specifications, the schematic diagram of FIG. 21(A) is used. As shown, the inherent distortion of the exposure field of the meeting is common to the 45 electron beam optical systems 70. The common deformation of the plurality of electron beam optical systems 70, as shown in the schematic diagram of FIG. 21(B), can be offset or reduced by arranging the apertures 58a on the light shielding film 58 on the photovoltaic layer 60. The configuration of the deformation is modified to be corrected. Further, the circle of Fig. 21(A) shows the aberration effective area of the electron beam optical system 70.

In Fig. 21(B), for easy understanding, each of the apertures 58a is shown as a parallelogram or the like instead of a rectangle. Actually, the aperture 58a of the light shielding film 58 is formed in a rectangular shape or a square shape. In this case, the barrel distortion inherent to the electron beam optical system 70 is shown to be offset by arranging a plurality of apertures 58a along the pincushion distortion shape on the photovoltaic layer 60. Reduce the situation. Further, the deformation of the electron beam optical system 70 is infinitely limited to the barrel distortion, and in the case of, for example, the pincushion distortion of the electron beam optical system 70, the effect of the pincushion distortion can be offset or reduced, and the plurality of apertures 58a can be configured into barrel distortion. shape. In addition, the position of the plurality of light beams from the projection optical system 86 may or may not be adjusted in accordance with the configuration of the apertures 58a.

As described above, the exposure apparatus 100 of the present embodiment includes the multi-beam optical system 200 including 45 units, the control unit 11, the reflected electron detectors 106 _x1 , 106 _x2 , 106 _y1 , 106 _y2 and the signal processing device 108 . Exposure unit 500 (see Fig. 18). The multi-beam optical system 200 includes a light irradiation device 80 and an electron beam optical system 70. The light illumination device 80 includes a pattern generator 84 that provides a plurality of individually controllable light beams, an illumination system 82 that illuminates the pattern generator 84, and a plurality of light beams from the pattern generator 84 that illuminate the light elements 54. In the projection optical system 86, the electron beam optical system 70 irradiates electrons emitted from the photovoltaic element 54 by the plurality of light beams to the photovoltaic element 54 as a plurality of electron beams. Therefore, according to the exposure apparatus 100, since the aperture is not shielded, the source of the complicated deformation due to charging or magnetization disappears fundamentally, and the excess electrons (reflected electrons) which do not contribute to the exposure of the target are reduced, thereby eliminating the long-term property. The cause of instability.

Further, according to the exposure apparatus 100 of the present embodiment, the main control unit 110 controls the scanning (moving) of the wafer stage WST in the Y-axis direction of the wafer W by the stage driving system 26 during actual wafer exposure. In parallel with this, the main control unit 110, for each of the m (e.g., 45) multi-beam optical systems 200, illuminates n beams of n (e.g., 72,000) apertures 58a through the optoelectronic elements 54, respectively. The states (on state and off state) are changed for each aperture 58a, and the intensity adjustment of the beam is performed for each beam using the illuminance distribution adjusting element 94 for each divided region of each crystal or using the pattern generator 84.

Further, in exposure apparatus 100, based electrostatic multipole 70c by the first electrostatic lens 70c _1, and a high speed individually corrected by the correction of the variation in the total current amount generated due to the Coulomb effect of the X-axis direction and the Y-axis direction The reduction ratio (change). Further, in the exposure apparatus 100, the irradiation position deviation of the beam due to various vibrations or the like is corrected by the second electrostatic lens 70c ₂ (the projection position of the cut pattern in the optical pattern, that is, the projection position of the cut pattern described later).

Accordingly, for example, the two-layer layout using the ArF immersion exposure apparatus is equal to the pre-formed line of the fine line and the space pattern in which the X-axis direction is the periodic direction, for example, each of the 45 irradiation areas on the wafer. The position is required to form a cutting pattern, and high-precision and high-output exposure can be performed.

Therefore, when the above-described complementary lithography is performed by the exposure apparatus 100 of the present embodiment and the L/S pattern is cut, even in each of the multi-beam optical systems 200, any of the plurality of apertures 58a is passed. When the beam of 58a is in the on state, in other words, regardless of the combination of the beams in the on state, each of the 45 irradiation regions on the wafer may be formed in advance in the X-axis direction in the periodic direction. A desired pattern is formed on the desired line in the line and space pattern to form a cut pattern.

Further, in the exposure apparatus 100 of the present embodiment, since the photovoltaic capsule 50 is used, the photoelectric element 54 can be easily transported, and the photovoltaic element 54 can be easily attached to the casing 19 of the electron beam optical unit 18A. Further, it is only necessary to evacuate the inside of the first vacuum chamber 34, that is, the cover member 64 of each of the plurality of photovoltaic capsules 50 can be separated from the main body portion 52 by its own weight to be driven by the vacuum corresponding actuator 66. Since the 68 is simultaneously received and accommodated in the circular hole 68a, the cover member 64 of the plurality of photovoltaic capsules 50 can be removed in a short time. Further, in the maintenance of the electron beam optical unit 18A, etc., only a plurality of cover members 64 individually housed in the plurality of circular holes 68a of the cover receiving plate 68 are simultaneously crimped to the corresponding photoelectric capsules 50. In the state of the main body portion 52, the inside of the first vacuum chamber 34 is opened to the atmosphere, that is, the respective cover members 64 can be integrated with the corresponding body portion 52 by the pressure difference between the inside (vacuum) and the outside (atmospheric pressure) of the photo capsule 50. Chemical. Accordingly, it is possible to surely prevent the photovoltaic layer 60 from coming into contact with the air. Further, in a state where the main body portion 52 is attached with the cover member 64, the main body portion 52 can be released from the first plate 36 that releasably supports the main body portion 52.

Further, in the exposure apparatus 100 of the above embodiment, instead of the pattern generator 84 having the 12-column strip line 85 shown in Fig. 13, a pattern generator 184 having 13 rows of flat strips 85 as shown in Fig. 22 is used. . The pattern generator 184, which is located at the uppermost flat strip row in Fig. 22 (referred to as 85a for easy identification in Fig. 22), is one of the 12 flat strips (primary strip rows) 85 which are generally used. In the event of damage, instead of the damaged flat strip column 85, a backup flat strip is used. A plurality of rear spare flat strips 85a can be provided.

Further, in the exposure apparatus 100, since the light-receiving surface of the pattern generator 84 is substantially divided into a partial region of 2 × 12 = 24 by the illuminance distribution adjusting element 94 (refer to Fig. 13), it is also possible to divide each partial region.备用 Set the spare flat strip column after setting.

Further, in the above description, each of the flat strips 84b of the pattern generator and the aperture 58a of the photo-electric element 54 are set to 1:1, that is, the flat strips 84b and the electron beam system irradiated onto the wafer are set to 1: 1 corresponds. However, it is not limited thereto, and it is also possible to form a light beam by a flat strip 84b included in a flat strip row from the main flat strip row 85, for example, a flat strip row adjacent to the rear backup flat strip array 85a. The electron beam generated by the irradiation of the photovoltaic element 54 is irradiated onto a target region (referred to as a first target region) on the target wafer, and is carried by, for example, a flat ribbon contained in the flat strip column 85a. The light beam generated by the light beam emitted from the light-emitting element 54 by the light beam of one of the flat strips 84b included in the other flat strip row 84b or the main flat strip row 85 can be irradiated onto the first target region on the wafer. That is, an electron beam generated by the light beam from the light beams of the two flat strips 84b included in the different flat strip rows can be overlapped and irradiated onto the same target region on the wafer. Accordingly, for example, the dose of the target region is set to a desired state.

Alternatively, instead of the pattern generator 84 shown in Fig. 13, as shown in Fig. 23(A), the relative main flat strips 85 are added so as not to have the width of the flat strip 84b (the flat strip 84b is arranged). Pitch) A pattern generator for the correction flat strip column 85b with a 1 time distance staggered configuration. The correction flat strip row 85b shown in Fig. 23(A) is a half-width of the flat strip 84b (flat strip 84b) as shown in Fig. 23(B) which is enlarged in the vicinity of the circle B in Fig. 23(A). The arrangement is half (1 μm) of the pitch. This correction flat strip column 85b can be used to perform fine dose adjustment such as PEC (Proximity Effect Correction). Although the halftone can be produced by the GLV itself, it is effective in the case where the pixel is further corrected to be corrected. The pattern generator may include a rear backup flat strip row 85a and a correction flat web row 85b in addition to the flat strip row 85.

Further, although the above embodiment has been described with respect to the case where the pattern generator 84 is formed of GLV, the present invention is not limited thereto, and a reflective liquid crystal display element or a digital micromirror device (Digital Micromirror Device) or PLV may be used. A pattern generator 84 is configured by a reflection type spatial light modulator of a plurality of movable reflection elements such as (Planer Light Valve). Alternatively, the configuration of the optical system inside the light irradiation device 80 may be configured by various penetrating spatial light modulators. The pattern generator 84 is not limited to the spatial light modulator as long as it is a pattern generator capable of providing a plurality of individually controllable light beams. In addition to the beam on/off, it is also possible to use intensity adjustment and size. Changed pattern generator. Further, beam control (on/off, intensity adjustment, size change, etc.) of the pattern generator 84 may not necessarily be performed for each light beam, and may be performed only for a partial beam or for each of a plurality of beams.

As apparent from the above description, the configuration of the optical unit corresponding to the optical unit 18B of the above embodiment can be of various types. A configuration example of various types of optical units is shown in FIG. The optical unit shown in FIG. 24(A) may be referred to as an L-type reflective type, and includes: an illumination system unit IU including a plurality of illumination systems two-dimensionally arranged in a predetermined positional relationship on the XZ plane, inclined at a relative XY plane 45 The plurality of pattern generators 84 are disposed two-dimensionally on one side of the base BS in a positional relationship corresponding to the plurality of illumination systems, and include a positional relationship corresponding to the plurality of pattern generators 84 and the corresponding photoelectric elements in the XY An optical unit IMU of a plurality of projection optical systems arranged in two dimensions on a plane. The optical axes of the plurality of projection optical systems are not shown, but are identical to the optical axes of the corresponding electron beam optical systems. In this case, the pattern generator 84 is configured by a reflective spatial light modulator similar to that of the above embodiment. This L-shaped reflection type has an advantage that access to the pattern generator is easy, and the size of the light receiving surface of the pattern generator is restricted from the above-described embodiment and the like.

The optical unit shown in Fig. 24(B), which may be referred to as a U-reflective type, is provided with an illumination system unit IU including a plurality of illumination systems arranged two-dimensionally in a predetermined positional relationship on the XY plane, inclined at a relative XY plane - One of the bases BS ₁ of 45 degrees is a plurality of reflective spatial light modulators 84 ₁ which are two-dimensionally arranged in a positional relationship corresponding to a plurality of illumination systems, and one of the bases BS ₂ inclined at 45 degrees with respect to the XY plane a plurality of spatial light modulators 84 ₁ corresponding to the positional relationship of the plurality of spatial light modulators 84 ₁ and comprising a plurality of spatial light modulators 84 ₂ and corresponding photoelectric elements The optical unit IMU of a plurality of projection optical systems in which the positional relationship is two-dimensionally arranged on the XY plane. Although the optical axes of the plurality of projection optical systems are not shown, they are identical to the optical axes of the corresponding electron beam optical systems. In this case, for example, when one of the reflective spatial light modulators 84 _{2 is} used as a pattern generator, the other spatial light modulator 84 _{1 can} be used as having the same or higher than the illuminance distribution adjusting element 94. The illuminance distribution adjusting device of the analytical ability.

The optical unit shown in FIG. 24(C) may be referred to as a straight-through type, and is a plurality of optical systems (light irradiation device 80A) configured by illuminating the illumination system and the pattern generator 84 and the projection optical system on the same optical axis. The XY two-dimensional arrangement is performed in the same casing (barrel) 78 in a predetermined positional relationship corresponding to a plurality of photoelectric elements. The optical axes of the plurality of light irradiation devices 80A coincide with the optical axes of the corresponding electron beam optical systems. In the straight-through type, the pattern generator 84 must use a transmissive spatial light modulator, such as a transmissive liquid crystal display element or the like. The straight-through type has the advantages of easy to secure the accuracy of each axis, small size of the lens barrel, and the ability to use both of the two modes described later in Figs. 25(A) and 25(B).

An optical unit of the same type as the optical unit 18B used in the exposure apparatus 100 of the above-described embodiment is schematically shown in Fig. 24(D). The optical unit shown in Fig. 24(D) can be called a straight-reflex type, and has the same advantages as the straight-through type.

In the above embodiment, light is irradiated to the photovoltaic layer 60 through the aperture 58a, but the aperture may not be used. For example, as shown in FIG. 25(A), the light pattern image formed by the pattern generator is projected onto the photovoltaic element, and further converted into an electronic image by the photoelectric element, and then imaged on the wafer surface.

In the above embodiment, as shown in Fig. 25(B), light is irradiated to the photovoltaic layer through a plurality of apertures. By the use of the aperture, the light beam having the desired cross-sectional shape can be incident on the photovoltaic layer without being affected by aberrations of the projection optical system between the pattern generator and the photovoltaic element. Further, the aperture and the photovoltaic layer may be integrally formed as in the above embodiment, or may be disposed to face each other through a predetermined gap.

Further, in the above embodiment, the case where the transparent plate member 56 serving as the vacuum partition wall and the light shielding film 58 having the aperture 58a are integrated with the photovoltaic layer 60 have been described. However, the vacuum partition wall and the light shielding film (aperture film) ) With the photovoltaic layer, there are various configurations.

Further, in the above embodiment, the case where the extraction electrode 112 is provided around the circular opening 68c of the lid accommodation plate 68 is exemplified, but the measurement electron beam position may be provided instead of or in addition to the cover accommodation plate 68. At least one of the measuring member and the sensor for detecting the electron beam. As the measuring member for measuring the beam position of the former, a combination of a reflecting surface having an opening and a detecting means for detecting reflected electrons from the reflecting surface, or a reflecting surface having a mark formed on the surface and detecting reflected electrons generated from the mark may be used. A combination of detection devices, and the like.

 "Second Embodiment"  

Fig. 26 schematically shows the configuration of the exposure apparatus 1000 of the second embodiment. Here, the same or equivalent components as those of the exposure apparatus 100 of the above-described first embodiment are denoted by the same reference numerals, and their description will be omitted.

The exposure apparatus 1000 differs from the exposure apparatus 100 of the first embodiment in that the exposure apparatus 100 of the first embodiment directly inserts the through hole 36a of the first plate 36 of the main body portion 52 of the photovoltaic capsule 50. The first vacuum chamber 34 is partitioned, and the vacuum partition wall 132 made of quartz glass or the like is closed in an airtight state with respect to the outside, and the inside of the first portion 19a of the casing 19 forming the first vacuum chamber 34 is formed. point. Hereinafter, the description will be given focusing on the difference point.

Fig. 27 shows the internal structure of the casing 19 corresponding to one electron beam optical system 70 of the exposure apparatus 1000 of the second embodiment. As shown in FIG. 27, the photovoltaic element 136 is disposed below a predetermined distance from the vacuum partition wall 132. As shown in FIG. 28(A), the photovoltaic element 136 includes a substrate 134, a light shielding film 58, and a photovoltaic layer which are formed of quartz (S _i O ₂ ) which is integrally formed in the same manner as the photovoltaic element 54 described above. 60. The light shielding film 58 of the photovoltaic element 136 is formed with at least 72,000 apertures 58a in the same configuration as described above.

Referring back to FIG. 27, the extraction electrode 112 is disposed under the photovoltaic element 136 inside the first vacuum chamber 34.

In the exposure apparatus 1000, since the photo capsule 50 is not used, the lid storage plate 68 and the vacuum corresponding actuator 66 are not provided in the first vacuum chamber 34 (see FIGS. 26 and 27).

The electron beam optical unit 18A of the second embodiment includes the bottom plate 38, and the lower structure (including the electron beam optical system 70 inside the second vacuum chamber 72) is the same as that of the exposure apparatus 100 of the first embodiment. Further, the configuration other than the electron beam optical unit 18A is also the same as that of the exposure apparatus 100 described above.

In addition to the effect similar to the exposure apparatus 100 of the first embodiment, the exposure apparatus 1000 configured in this manner has the following additional functions because the photovoltaic element 136 is different from the vacuum partition 132. .

That is, if the diameter of the lens barrel is reduced in order to increase the number of electron beam optical systems, the curvature of field of the electron beam optical system becomes conspicuous. For example, when the electron beam optical system has the image plane curvature shown by the equation in FIG. 29 as the aberration, as shown in FIG. 29, the photovoltaic layer 60 (correctly speaking, the entire photovoltaic element 136) should be scratched. In the case where the photovoltaic layer 60 is bent in the opposite phase to the curved component of the image plane, even if the electron exit surface of the photovoltaic layer 60 is curved (becomes non-planar). Thereby, at least a part of the curvature of field of the electron beam optical system 70 is compensated, and positional shift, blur (defocus), and the like of the electron beam image due to curvature of the image plane are suppressed. Further, the amount of bending of the electron emission surface of the photovoltaic layer 60 can be made variable. For example, the amount of bending of the electron exit surface can be changed in accordance with changes in the optical characteristics (aberration, for example, curvature of field) of the electron beam optical system 70. Therefore, depending on the optical characteristics of the corresponding electron beam optical system, the amount of bending of the electron exit surface can be made different between the plurality of photovoltaic elements 136. In addition, in FIG. 29, the case where the photovoltaic layer 60 is convexly curved in the +Z direction (toward the projection optical system 86) is exemplified, which is because the electron beam optical system is assumed to have a convexity toward the -Z direction as an aberration. In the case where the image plane is curved, the photovoltaic layer 60 is given a curvature that cancels or reduces the influence of the curvature of field. Therefore, in the case where the electron beam optical system has an image plane convex in the +Z direction as its aberration, it is necessary to cause the photovoltaic layer 60 to be convexly curved in the -Z direction.

Further, in the exposure apparatus 1000 according to the second embodiment, similarly to the exposure apparatus 100, a rectangular exposure field in the X-axis direction is used. Therefore, even as indicated by the short double arrow in FIG. It is a deflection in one direction (the deflection around one axis, that is, the deflection in the X-axis direction and the deflection in the XZ section) is also high. Further, the present invention is not limited to the deflection of the photoelectric element 136 (photoelectric layer 60) in one direction, and it is of course possible to three-dimensionally deform the four corners downward. By changing the mode in which the photovoltaic element 136 is deformed, positional shift, deformation, and the like of the optical pattern image due to spherical aberration can be effectively suppressed. When the electron emission surface of the photovoltaic layer 60 is bent, a portion (for example, a central portion) of the electron emission surface and other portions (for example, a peripheral portion) are different in position from each other in the direction of the optical axis Axe of the electron beam optical system 70. .

Further, the thickness of the photovoltaic layer 60 may be distributed such that a position (for example, a central portion) of the electron exit surface is different from a position of another portion (for example, a peripheral portion) in the direction of the optical axis Axe. Further, as in the case of the first embodiment, when the photovoltaic element also serves as a vacuum partition, the electron emission surface of the photovoltaic layer 60 is curved (non-planar).

Further, in the case of using a so-called aperture-integrated photoelectric element in which the aperture of the photovoltaic element 136 is integrally provided with the photovoltaic layer, the aperture-integrated photovoltaic element can be provided as an actuator that can be driven in the XY plane. In this case, for example, as the aperture-integrated photovoltaic element, a multi-pitch type in which a column of the apertures 58a of the pitch a and a diameter of the apertures 58b of the pitch b are formed in every other row as shown in FIG. 30 can be used. The aperture-integrated photoelectric element 136a. However, in this case, the zoom function of the projection magnification (magnification) in the X-axis direction is changed by using the optical characteristic adjustment device 87 described above. In this case, as shown in FIG. 31(A), the optical characteristic adjusting means 87 amplifies the magnification of the projection optical system 86 in the X-axis direction from the state in which the light beam is irradiated to the array of the apertures 58a of the aperture-integrated photoelectric element 136a. As shown by the double arrow in Fig. 31(B), after the whole of the complex beam is enlarged in the X-axis direction, the aperture-integrated photoelectric element 136a is driven in the +Y direction as indicated by the white arrow in Fig. 31(C). That is, the beam can be illuminated by the aperture 58b. According to this, it is possible to form a cutting pattern for cutting a line pattern having a different pitch. However, the size and shape of the image beam do not necessarily have to use the zoom function of the projection optical system 86, and only the aperture-integrated photoelectric element 136a is driven, that is, the beam can be switched to the column and the pitch of the aperture 58a having the pitch a. The distance is the aperture of bb 58b. It is important that each of the complex beams (laser beams) is irradiated to a region on the photo-electric element 136a including the corresponding aperture 58a or 58b, regardless of the state before and after the switching. That is, as long as the size of each of the plurality of apertures 58a or 58b on the photovoltaic element 136a is smaller than the cross-sectional dimension of the corresponding beam.

Further, a row of three or more types of apertures having different pitches may be formed on the light-shielding film 58 of the photovoltaic element 136, and exposed in the same order as described above, so as to be capable of cutting in accordance with three or more pitches. The formation of the pattern.

As described above, when the magnification of the projection optical system 86 is changed, the beam intensity per unit area of the beam (laser beam) in the illuminated surface changes, so that the magnification can be obtained in advance by simulation or the like. The relationship between the change and the change in beam intensity is used to change (adjust) the intensity of the beam based on the relationship. Alternatively, the sensor may detect the intensity of a part of the beam when the magnification is changed, and change (adjust) the intensity of the beam based on the detected intensity information. In the latter case, as shown in FIG. 27, a sensor 135 is disposed at one end of the upper surface of the substrate of the photovoltaic element 136, and the actuator 135 is driven by the actuator to move the sensor 135 to the XY plane. The desired position within. In addition, the photoelectric element 136 can be formed not only to move in the XY plane but also to move in the Z-axis direction parallel to the optical axis AXe, or to be inclined with respect to the XY plane, or to be parallel to the optical axis Axe. Rotate.

Further, although not specifically described above, since the photovoltaic layer 60 has a certain area, it is not practical to ensure that the photoelectric conversion efficiency in the plane is uniform, and the photoelectric layer 60 has an in-plane distribution of photoelectric conversion efficiency. Therefore, the intensity adjustment of the light beam irradiated to the photovoltaic element can be performed according to the in-plane distribution of the photoelectric conversion efficiency of the photovoltaic layer 60. In other words, when the photo-electric layer 60 has the first portion of the first photoelectric conversion efficiency and the second portion of the second photoelectric conversion efficiency, the first photoelectric conversion efficiency and the second photoelectric conversion efficiency can be adjusted to be adjusted to the first one. The intensity of a portion of the beam and the intensity of the beam that is incident on the second portion. Alternatively, the intensity of the light beam irradiated to the first portion and the intensity of the light beam irradiated to the second portion are adjusted so as to compensate for the difference between the first photoelectric conversion efficiency and the second photoelectric conversion efficiency.

Further, in the exposure apparatus 1000 according to the second embodiment, a so-called aperture non-integral type photovoltaic element in which an aperture plate (aperture member) and a photoelectric element are not integrated can be used instead of the aperture-integrated photoelectric element 136. The aperture non-integral type photovoltaic element 138 shown in FIG. 32(A) includes a photovoltaic element 140 formed by forming a photovoltaic layer 60 on the lower surface (light exit surface) of the substrate 134, and a substrate 134 on the photovoltaic element 140 ( The light incident surface side is formed with an aperture plate 142 composed of a light shielding member having a plurality of apertures 58a arranged at a predetermined gap of, for example, 1 μ or less.

In the case of using an aperture non-integrated photovoltaic element, it is preferable to provide a driving mechanism capable of driving the aperture plate 142 in the XY plane. In this case, a multi-pitch type aperture similar to the above-described aperture-integrated photoelectric element 136a is formed in the aperture plate 142, and by using the magnification function of the magnification of the projection optical system 86, and the photovoltaic element 140 and the aperture plate 142 are The function of driving in a state in which the positional relationship between the two is maintained, that is, the cutting pattern for cutting the line pattern having different pitches can be formed in the same order as described above. In addition to this, a driving mechanism capable of driving the photovoltaic element 140 in the XY plane may be further provided. For example, only one of the photovoltaic element 140 and the aperture plate 142 can be driven to shift the relative position of the aperture plate 142 and the photovoltaic element 140 in the XY plane, thereby achieving a long life of the photovoltaic layer 60. Further, the aperture plate 142 may be configured to move the projection optical system 86 in the XY plane. In addition, the aperture plate 142 can move not only in the XY plane, but also in the Z-axis direction parallel to the optical axis AXe, or can be tilted relative to the XY plane, or can be rotated about the Z-axis parallel to the optical axis AXe. Further, the gap between the photovoltaic element 140 and the aperture plate 142 can be adjusted.

Further, in the case of using an aperture-non-integrated photoelectric element, only a driving mechanism for moving the photovoltaic element 140 can be provided. In this case, the photoelectric element 140 can be moved in the XY plane, whereby the long life of the photovoltaic layer 60 can be achieved. Further, in the case of using one of the bulk type photovoltaic elements described in the first embodiment, a drive mechanism for moving the photovoltaic element 54 may be provided. In this case, the photovoltaic element 54 can be moved in the XY plane, whereby the long life of the photovoltaic layer 60 can be achieved.

Further, the aperture of the aperture plate and the aperture of the photoelectric element may be used in combination. In other words, the aperture plate can be disposed on the incident side of the light beam of the aperture-integrated photoelectric element, and the beam passing through the aperture of the aperture plate can be incident on the photovoltaic layer through the aperture of the aperture-integrated photoelectric element.

Further, when the above-described aperture non-integral type photovoltaic element is used in the case of forming a cutting pattern for cutting a line pattern having a different pitch, the aperture plate can be replaced. Further, in the case of using the above-described aperture non-integral type photovoltaic element, a plurality of apertures may be formed by using a spatial light modulator such as a transmissive liquid crystal element instead of the aperture plate.

In addition, although the case where the magnification cutting function of the projection optical system 86 is used for forming the cutting pattern for cutting the line patterns having different pitches has been described above, it is also possible to change the magnification from the projection instead of changing the magnification. The optical system 86 is respectively irradiated to the pitch of the plurality of apertures of the plurality of apertures in the same aperture row of the aperture-integrated photoelectric element 136a or the aperture plate 142. For example, a plurality of parallel flat plates may be disposed in the optical path between the projection optical system 86 and the photoelectric element, and the pitch of the plurality of beams may be changed by changing the tilt angle thereof.

Further, the aperture-integrated photoelectric element is not limited to the type shown in Fig. 28(A), and as shown in Fig. 28(B), the space in the aperture 58a is used in the photovoltaic element 136 of Fig. 28(A). The transparent film 148 is filled with a type of photovoltaic element 136b. In the photovoltaic element 136b, instead of the transparent film 148, a space in the aperture 58a is partially filled with one of the substrates.

Alternatively, as shown in FIG. 28(C), a light-shielding film 58 having a pore diameter 58a may be formed on the upper surface (light incident surface) of the substrate 134 by chromium evaporation, under the substrate 134 ( The light-emitting surface is formed with a photovoltaic element 136c of the type of the photovoltaic layer 60, or as shown in FIG. 28(D), in the photovoltaic element 136c of FIG. 28(C), the space in the aperture 58a is filled with the transparent film 148. A type of photovoltaic element 136d.

In addition, as shown in Fig. 28(E), a photovoltaic element 60 is formed under the substrate 134, and a photovoltaic element 136e of a type having a light-shielding film 58 having a hole diameter 58a is formed under the photovoltaic layer 60. Moreover, the light-shielding film (chrome film) 58 of FIG. 28(E) has a function of shielding electrons without shielding light.

Any of the aperture-integrated photovoltaic elements 136, 136a, 136b, 136c, 136d, and 136e described above may be composed of a laminate of quartz and a transparent film (single layer or multiple layers) not only of quartz but also of quartz. Material 134.

Further, in order to form the aperture non-integrated type photovoltaic element together with, for example, the photovoltaic element 140 shown in FIG. 32(A), it is not limited to the type in which the aperture plate 142 is composed only of the light-shielding member having the aperture, and the substrate and the substrate may be used. An aperture plate with a light-shielding film. As the aperture plate of this type, the aperture of the light-shielding film 58 having the aperture 58a formed by chrome evaporation on the lower surface (light exit surface) of the substrate 144 made of, for example, quartz as shown in Fig. 32(B) can be used. The plate 142a is formed by using a substrate 150 composed of a plate member 146 made of quartz and a transparent film 148 as shown in FIG. 32(C) and a lower surface (light emitting surface) of the substrate 150 by chromium evaporation. The aperture plate 142b having the light shielding film 58 of the aperture 58a, or the aperture plate 142c filled with the space inside the aperture plate 142a, the aperture 58a by the transparent film 148 as shown in Fig. 32(D), or as shown in Fig. 32 ( E) An aperture plate 142d shown in the aperture plate 142a and the space in the aperture 58a being partially filled by one of the substrates 144. Further, regardless of any of the aperture plates 142, 142a, 142b, 142c, and 142d, it can be used upside down.

Further, in the first embodiment, instead of the photovoltaic element 54 which also serves as the vacuum partition wall of the main body portion 52 of the photo capsule 50, a vacuum partition wall may be provided in the main body portion 52, and a predetermined gap may be disposed below the vacuum partition wall. Each of the above-described various types of aperture-integrated photovoltaic elements or aperture-non-integrated photovoltaic elements is housed inside the body portion 52. A drive mechanism of the aperture-integrated photoelectric element 136 (136a to 136d) or a drive mechanism that moves at least one of the photoelectric element 140 and the aperture plate 142 (142a to 142d) may be provided.

Further, the above description has been made on the premise that the plurality of apertures 58a of the photoelectric elements 54, 136, 136a to 136e and the aperture plates 142, 142a to 142d are all of the same size and the same shape, but the plurality of apertures 58a need not be all. The dimensions are the same, or all shapes are the same. What is important is that the size of the aperture 58a is such that the corresponding beam can illuminate its entire area, which is smaller than the size of the corresponding beam.

Further, in the exposure apparatus 1000 of the second embodiment, only the photovoltaic element 140 can be used without using an aperture plate. In this case as well, the wafer W is exposed by scanning exposure by electron beam irradiation while moving in the Y-axis direction. In this case, the plurality of light beams are transmitted through the substrate 134 of the photovoltaic element 140 to the photovoltaic layer 60 at a first pitch (for example, a pitch (interval) a) in the X-axis direction. The first state and the second state in which the plurality of light beams are transmitted through the base material 134 of the photovoltaic element 140 in the second pitch (for example, the pitch (interval) b) in the X-axis direction are switched to the second state of the photovoltaic layer 60, and one of them is switched to On the other hand, it is possible to form a cutting pattern for cutting a line pattern having different pitches. In this case, the magnification change function of the projection optical system 86 can be used in combination. In this case, instead of changing the magnification, a means for changing the pitch (interval) of the plurality of beams irradiated from the projection optical system 86 to the photovoltaic element 140 may be provided. For example, a plurality of parallel flat plates may be disposed in the optical path between the projection optical system 86 and the photoelectric element, and the pitch (interval) of the plurality of beams may be changed by changing the tilt angle thereof. In this case, it is also possible to form a cutting pattern that can accommodate three or more pitches.

In addition, in the above-described first and second embodiments (hereinafter, referred to as the respective embodiments), the optical systems included in the exposure apparatuses 100 and 1000 are provided with a plurality of rows (columns) of a plurality of multi-beam optical systems 200. Illustrative, but not limited to, the optical system may be a single-row type of multi-beam optical system. The single-line type multi-beam optical system can also be applied to the above-described dose control, magnification control, correction of image positional shift of a pattern, correction of various aberrations, and various elements using a photoelectric element or an aperture plate. Correction, and longevity of the photovoltaic layer.

Further, in each of the above embodiments, an opening may be provided in the peripheral wall portion 76, and the inside of the second vacuum chamber 72 and the stage chamber 10 may be a single vacuum chamber. Alternatively, only one portion of the upper end portion of the peripheral wall portion 76 is left and the cooling plate 74 is removed, and the inside of the second vacuum chamber 72 and the stage chamber 10 is made into one vacuum chamber.

Further, in each of the above embodiments, the wafer W is individually transported onto the wafer stage WST, and the wafer W is irradiated from the multi-beam optical system 200 while moving the wafer stage WST in the scanning direction. Although the exposure apparatuses 100 and 1000 for performing exposure have been described, the present invention is not limited thereto, and the wafer W can be integrally formed on the stage with a table (holding member) that is integrally transported with a wafer called a shuttle. The above-described embodiments (except the wafer stage WST) can also be applied to the replacement type of exposure apparatus.

Further, in each of the above embodiments, the wafer stage WST is movable in the six-degree-of-freedom direction with respect to the X stage. However, the present invention is not limited thereto, and the wafer stage WST can be moved only in the XY plane. . In this case, the position measuring system 28 that measures the position information of the wafer stage WST may be one that can measure the position information in the three-degree-of-freedom direction in the XY plane.

In each of the above embodiments, the optical system 18 is supported by the frame 16 constituting the top of the stage chamber 10 on the floor. However, the present invention is not limited thereto, and may be on the top surface of the clean room or vacuum. The top surface of the chamber is suspended by, for example, three points by a suspension support mechanism having an anti-vibration function.

Moreover, the exposure technique constituting the complementary lithography is not limited to the combination of the immersion exposure technique using the ArF excimer laser source and the charged particle beam exposure technique, and may be, for example, a line and space pattern using an ArF excimer laser. A dry exposure technique is used for light sources, or other light sources such as KrF excimer laser sources.

Further, in each of the above embodiments, the case where the target is a wafer for manufacturing a semiconductor element has been described. However, the exposure apparatuses 100 and 1000 of the above embodiments are also suitably used for manufacturing a fine pattern on a glass substrate. Photomask.

An electronic component (micro component) such as a semiconductor element, as shown in FIG. 33, is a step of fabricating a wafer from a germanium material by a step of performing functional design of the component, and an actual circuit is formed on the wafer by lithography. Wafer processing steps, component assembly steps (including cutting process, bonding process, packaging process), inspection steps, etc. are manufactured. The wafer processing step includes a lithography step (including a process of applying a resist (inductive material) on the wafer, and exposing the wafer to the wafer by the electron beam exposure apparatus of the foregoing embodiment and an exposure method thereof (in accordance with a design pattern) The process of patterning the data and the process of developing the exposed wafer), the etching step of removing the exposed portion of the portion other than the portion where the resist remains, and the etching which is not required after the etching is completed The resist removal step of the agent removal, and the like. The wafer processing step may further include a pre-process (oxidation step, CVD step, electrode formation step, ion implantation step, etc.) before the lithography step. In this case, in the lithography step, the exposure method is performed by using any of the exposure apparatuses 100 and 1000 of the above-described embodiments, so that the element pattern is formed on the wafer, so that good productivity can be achieved. Rate) Manufacturing high-volume micro-components. In particular, in the lithography step (process for performing exposure), the complementary lithography is performed, and in this case, the exposure method can be performed by using any of the exposure apparatuses 100 and 1000 of the above-described embodiments. Higher microcomponents.

In addition, although the above-mentioned embodiment has been described with respect to an exposure apparatus using an electron beam, it is not limited to an exposure apparatus, a device for performing at least one of predetermined processing and predetermined processing using an electron beam-targeted object such as welding, or an electron beam. The electron beam apparatus of the above embodiment can also be applied to an inspection apparatus or the like.

In addition, although the above-mentioned embodiment has been described with respect to the case where the photoelectric layer 60 is formed of an alkali photoelectric conversion film, the type of the electron beam device and the use thereof are not limited to the alkali photoelectric conversion film, and other types may be used. The photoelectric conversion film constitutes a photovoltaic element.

Further, in each of the above embodiments, the shape of the member, the opening, the hole, and the like are described in a circular shape, a rectangular shape, or the like, but it is of course not limited to such a shape.

Further, the disclosures of all the publications, the international publication, the U.S. Patent Application Publications, and the U.S. Patent Specification, which are incorporated herein by reference to the above-mentioned embodiments, are incorporated herein by reference.

Claims (103)

 An electron beam device for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: an optical element capable of providing a plurality of individually controllable light beams; the first optical system And illuminating the photo-electric element with a plurality of light beams generated from a plurality of light beams of the optical element; and a second optical system, by irradiating the plurality of light beams to the photovoltaic element, The emitted electrons are irradiated to the target as a plurality of electron beams; and the intensity of at least one of the plurality of light beams irradiated to the photoelectric element is changeable.    The electron beam apparatus according to claim 1, wherein the target object is irradiated by the plurality of electron beams while moving in a first direction orthogonal to an optical axis of the second optical system.    An electron beam apparatus according to claim 1 or 2, further comprising: an illumination system that irradiates the optical element with illumination light of 1 or more; wherein the change in intensity includes the intensity and intensity distribution of the illumination light of 1 or 2 or more Change of at least one party.    The electron beam apparatus of claim 3, wherein the illumination system has an intermittent lighting function.    The electron beam apparatus of claim 3 or 4, wherein the illumination system has a shaping optical system that generates light having a predetermined cross-sectional shape of 1 or more from light from the light source.    The electron beam apparatus according to claim 5, wherein the shaping optical system has a long cross-sectional shape that is orthogonal to an optical axis of the second optical system and that corresponds to a second direction orthogonal to the first direction. 1 or 2 lights.    The electron beam apparatus of claim 6, wherein the optical axis of the optical system of the illumination system and the optical axis of the first optical system are not coaxial with each other and are parallel to each other.    The electron beam apparatus of claim 7, wherein an optical axis of the optical system of the illumination system and an optical axis of the first optical system are offset in a direction corresponding to the first direction.    The electron beam apparatus of any one of claims 5 to 8, wherein the illumination system has a mirror that reflects the illumination light toward the optical element; and a holding member that holds the optical element is formed through the shaping optical system An opening that is incident on one or more of the mirrors.    The electron beam apparatus of any one of claims 1 to 9, wherein the optical element is capable of varying the intensity of at least one of the plurality of beams emitted from the optical element.    The electron beam apparatus according to any one of claims 1 to 10, wherein the intensity adjustment is performed in such a manner that the plurality of electron beams generated by irradiating the plurality of light beams to the photoelectric element are substantially the same in intensity .    The electron beam apparatus according to any one of claims 1 to 11, wherein at least one of an anterior scattering and a back scatter of electrons generated when the plurality of electron beams are irradiated onto the target is considered, and the plurality of beams are adjusted At least 1 beam intensity.    The electron beam apparatus according to any one of claims 1 to 12, wherein the photovoltaic element has a photoelectric conversion layer.    The electron beam apparatus of claim 13, further comprising a plurality of apertures disposed between the first optical system and the photoelectric conversion layer.    The electron beam apparatus of claim 14, wherein the plurality of apertures are provided in an aperture member disposed on an optical path between the first optical system and the photoelectric element, and the plurality of apertures are irradiated by the plurality of apertures Photoelectric components.    An electron beam apparatus according to claim 15, which is provided with the aperture member.    The electron beam apparatus of claim 15 or 16, wherein the aperture member has a light transmissive member permeable to the light beam, and a light shielding layer disposed on a side of the light penetrating member; the plurality of apertures included in the a plurality of openings of the light shielding layer.    The electron beam apparatus of claim 17, wherein the light shielding layer is disposed on a light exit surface side of the light penetrating member.    The electron beam apparatus according to any one of claims 15 to 18, wherein the aperture member is movable in a direction orthogonal to an optical axis of the first optical system.    The electron beam apparatus according to any one of claims 15 to 19, wherein the aperture member and the first optical system are relatively movable in a direction orthogonal to an optical axis of the first optical system.    The electron beam apparatus according to any one of claims 15 to 20, wherein the aperture member and the photoelectric element are relatively movable in a direction orthogonal to an optical axis of the first optical system.    The electron beam apparatus according to any one of claims 15 to 21, wherein the aperture member and the photoelectric element are movable to the first optical body while maintaining a positional relationship between the aperture member and the photoelectric element The optical axis of the system moves in the direction orthogonal to the axis.    The electron beam apparatus according to any one of claims 15 to 22, wherein the aperture member is disposed on an optical path between the photovoltaic element and the first optical system with a gap interposed therebetween.    The electron beam apparatus according to any one of claims 13 to 23, wherein the photovoltaic element has a light penetrating member through which the light beam is permeable; the photoelectric conversion layer is disposed on a light exiting surface of the light penetrating member.    The electron beam apparatus according to any one of claims 1 to 12, wherein the photovoltaic element has a light transmissive member through which the light beam is permeable, a photoelectric conversion layer disposed on a light exiting surface of the light transmitting member, and a configuration a light shielding layer on a side of the light penetrating member; and a plurality of openings formed in the light shielding layer as a plurality of apertures; and a plurality of light beams passing through the plurality of openings are incident on the photoelectric conversion layer.    The electron beam apparatus of claim 25, wherein the light shielding layer is disposed on a light exit surface side of the light penetrating member.    The electron beam apparatus of claim 26, wherein the photoelectric conversion layer is disposed in a plurality of openings formed in the light shielding layer.    The electron beam apparatus of claim 27, wherein the light shielding layer is disposed on a light incident surface side of the light penetrating member.    The electron beam apparatus according to any one of claims 25 to 28, wherein the photovoltaic element is movable in a direction orthogonal to an optical axis of the second optical system.    The electron beam apparatus according to any one of claims 14 to 29, wherein the plurality of light beams from the optical element irradiated to the first position of the photovoltaic element by the first optical system are transmitted through the plurality of apertures The aperture of 1 is incident on the photoelectric conversion layer.    The electron beam apparatus of claim 30, wherein the plurality of light beams from the optical element irradiated to the second position of the photovoltaic element by the first optical system are transmitted through the plurality of apertures different from the one aperture The other aperture is incident on the photoelectric conversion layer.    The electron beam apparatus of any one of claims 14 to 31, wherein each of the plurality of apertures has a smaller size than a corresponding beam profile.    The electron beam apparatus of any one of claims 14 to 32, wherein each of the plurality of apertures limits a corresponding beam; and the plurality of beams passing through the plurality of apertures are incident on the photoelectric conversion layer.    The electron beam apparatus according to any one of claims 14 to 33, wherein the shape of at least one of the plurality of apertures and the plurality of light beams passing through the plurality of apertures are generated by being incident on the photoelectric conversion layer The plurality of electron beams have different shapes of the illuminated areas on the target.    The electron beam apparatus of claim 34, wherein the shape of the at least one aperture is determined such that each of the plurality of electron beams has a rectangular area on the target.    An electron beam apparatus according to claim 35, wherein the shape of the at least one aperture is determined so as to suppress an arc of a corner of the irradiation area on the target.    The electron beam apparatus according to any one of claims 34 to 36, wherein the shape of the at least one aperture is determined by considering the scattering of electrons generated when the plurality of electron beams are irradiated onto the target.    The electron beam apparatus of any one of claims 14 to 37, wherein the configuration of the plurality of apertures is determined according to optical characteristics of the second optical system.    The electron beam apparatus of any one of claims 14 to 38, wherein the configuration of the plurality of apertures is determined according to distortion of the second optical system.    The electron beam apparatus of any one of claims 14 to 39, wherein the plurality of apertures are arranged to offset or reduce the influence of the aberration of the second optical system on the plurality of electron beams .    The electron beam apparatus according to any one of claims 14 to 40, wherein the target object is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to an optical axis of the second optical system; The plurality of apertures include a plurality of apertures arranged along a direction orthogonal to an optical axis of the second optical system and corresponding to a second direction orthogonal to the first direction.    The electron beam apparatus of claim 41, wherein the plurality of apertures include: a first group including a plurality of apertures arranged at a first pitch in a direction corresponding to the second direction; and a second group included in a plurality of apertures arranged at a second pitch in a direction corresponding to the second direction; the first group and the second group are separated in a direction corresponding to the first direction.    An electron beam apparatus according to claim 42, wherein the first state of the plurality of apertures included in the first group is disposed on an optical path of the plurality of beams, and the first state is disposed on an optical path of the plurality of beams One of the second states of the plurality of apertures included in the two groups is switched to the other.    The electron beam apparatus of claim 43, wherein the switching from one of the first state to the second state to the other includes a change in a projection magnification of the first optical system.    The electron beam apparatus according to any one of claims 14 to 44, wherein the plurality of apertures are disposed in a plane orthogonal to an optical axis of the first optical system.    The electron beam apparatus of any one of claims 13 to 45, wherein the photoelectric conversion layer is curved.    The electron beam apparatus of claim 46, wherein the photoelectric conversion layer is curved in a convex shape toward the first optical system.    The electron beam apparatus of claim 46 or 47, wherein the photoelectric conversion layer is curved to cancel or reduce the influence of the aberration of the second optical system on the plurality of electron beams.    The electron beam apparatus according to any one of claims 46 to 48, wherein at least a portion of the curvature of field of the second optical system is compensated by bending the photoelectric conversion layer.    The electron beam apparatus according to any one of claims 46 to 49, wherein the target object is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to an optical axis of the second optical system; The photoelectric conversion layer is curved in a direction corresponding to the second direction orthogonal to the optical axis of the second optical system and orthogonal to the first direction.    The electron beam apparatus according to any one of claims 13 to 50, wherein the electron-emitting surface of the photoelectric conversion layer has a first portion and a second portion; and in the optical axis direction of the second optical system, the first portion The position is different from the position of the second part.    The electron beam apparatus according to any one of claims 13 to 51, wherein the photoelectric conversion layer has a distribution of photoelectric conversion efficiency; and the intensity is adjusted according to the distribution of the photoelectric conversion efficiency.    The electron beam apparatus according to any one of claims 13 to 52, wherein the photoelectric conversion layer has a first portion having a first photoelectric conversion efficiency and a second portion having a second photoelectric conversion efficiency; The intensity of the light beam of the first portion and the intensity of the light beam irradiated to the second portion compensate for the difference between the first and second photoelectric conversion efficiencies.    The electron beam apparatus according to any one of claims 1 to 5, wherein the target object is irradiated by a plurality of the electron beams while moving in a first direction orthogonal to an optical axis of the second optical system; The plurality of light beams may be irradiated onto the first state of the photoelectric conversion layer at a first pitch in a direction corresponding to a second direction orthogonal to the optical axis of the second optical system and orthogonal to the first direction, and The plurality of light beams may be irradiated to one of the second states of the photoelectric conversion layer at a second pitch in a direction corresponding to the second direction to switch to the other.    The electron beam apparatus of claim 54, wherein the switching from one of the first state to the second state to the other includes a change in a projection magnification of the first optical system.    The electron beam apparatus according to any one of claims 1 to 55, comprising a magnification variable device for changing a projection magnification of the first optical system.    An electron beam apparatus according to claim 55 or 56, wherein the intensity of at least one of the plurality of light beams is changed by reflecting a change in a projection magnification of the first optical system.    The electron beam apparatus according to any one of claims 1 to 57, wherein the photovoltaic element is movable in a direction orthogonal to an optical axis of the first optical system.    The electron beam apparatus according to any one of claims 1 to 58, wherein the photoelectric element and the first optical system are relatively movable in a direction orthogonal to an optical axis of the first optical system.    The electron beam apparatus of any one of claims 1 to 59, wherein the optical element comprises a spatial light modulator.    The electron beam apparatus of any one of claims 1 to 60, wherein the optical element comprises a plurality of movable reflective elements; the illumination light can be reflected by at least a portion of the plurality of movable reflective elements, thereby providing the plurality of light beams .    The electron beam apparatus of claim 61, wherein the target object is irradiated by the plurality of electron beams while moving in a first direction orthogonal to an optical axis of the second optical system; the plurality of movable reflective elements, It is arranged in a direction orthogonal to the optical axis of the second optical system and in a direction corresponding to the second direction orthogonal to the first direction.    The electron beam apparatus of claim 62, wherein the plurality of movable reflective elements comprise: a first column including a plurality of movable reflective elements arranged in the second direction; and a plurality of movable elements arranged in the second direction The second column of the reflective element; the first column and the second column are separated in a direction corresponding to the first direction.    The electron beam apparatus of claim 63, wherein the function of the second column is reserved as the first column.    The electron beam apparatus according to claim 63, wherein the electron beam generated by irradiating the light beam from the one of the movable reflective elements included in the first column to the photoelectric element is irradiated onto the target region on the target The electron beam generated by the light beam from one of the movable reflection elements included in the second column is irradiated onto the photoelectric element, and is irradiated onto the target region.    The electron beam apparatus according to any one of claims 63 to 65, wherein each of the plurality of movable reflective elements has a width in the second direction; the first column and the second column are shifted in the second direction Smaller than this width.    The electron beam apparatus according to any one of claims 61 to 66, wherein one of the plurality of light beams irradiated to the photovoltaic element is movable from two or more of the plurality of movable reflection elements The beam of the reflective element is generated.    The electron beam apparatus of claim 67, wherein the intensity of one of the light beams generated from the light beams of the movable reflection elements of two or more of the portions is changeable.    An electron beam apparatus according to any one of claims 1 to 60, wherein one of the plurality of light beams irradiated to the photovoltaic element is one or more of a plurality of light beams from the optical element Beam generation.    The electron beam apparatus of claim 69, wherein the intensity of one of the light beams generated by the light beam of two or more of the portions is changeable.    The electron beam apparatus according to any one of claims 1 to 70, wherein the first optical system has at least one movable optical member positioned between the optical element and the disposed position of the photovoltaic element.    An electron beam device for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: an optical element capable of providing a plurality of individually controllable light beams; the first optical system a plurality of light beams generated from a plurality of light beams from the optical element are irradiated to the photovoltaic element; and the second optical system is configured to irradiate the plurality of light beams to the photovoltaic element, whereby the photoelectric element is The emitted electrons are irradiated to the target as a plurality of electron beams; one of the plurality of light beams irradiated to the photoelectric element can be generated by using two or more of the plurality of light beams from the optical component The intensity of one beam generated by a beam of two or more of the portions is changeable.    The electron beam apparatus of claim 72, wherein the optical element comprises a plurality of movable reflective elements; the plurality of movable reflective elements are used to generate a plurality of light beams from the optical element; and from one of the plurality of movable reflective elements The light beam of the movable reflection element of 2 or more generates one of a plurality of light beams that are incident on the photoelectric element.    The electron beam apparatus according to any one of claims 67 to 73, wherein the other one of the plurality of light beams irradiated to the photovoltaic element is the other one of the plurality of light beams from the optical element The beam is generated, and the intensity of the other beam generated by the other two or more beams is changeable.    The electron beam apparatus of claim 67 or 73, wherein the optical element comprises a light diffracting type light valve.    The electron beam apparatus of claim 67 or 73, wherein each of the two or more movable reflective elements is controllable to cause light from the movable reflective element to enter the first state of the photoelectric element, and to prevent from being movable Light from the reflective element enters either of the second states of the photovoltaic element.    The electron beam apparatus of any one of claims 67, 73, 76, wherein the optical element changes a relative position of the movable reflective element of the two or more to generate at least one of the plurality of light beams.    The electron beam apparatus of claim 77, wherein the two or more movable reflective elements are controllable to change one of the two or more movable reflective elements and the other one of the two or more movable reflective elements The phase difference of one light.    The electron beam apparatus of any one of claims 1 to 78, wherein the second optical system is an electro-optical system having an electrostatic deflection lens.    The electron beam apparatus according to claim 79, wherein the electrostatic deflection lens is used for at least one of adjustment of a reduction ratio of the second optical system and adjustment of a position of the plurality of electron beams irradiated to the target object.    The electron beam apparatus according to claim 79 or 80, wherein the target object is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to an optical axis of the second optical system; the second optical system a rectangular exposure field having a length t in the first direction, substantially orthogonal to an optical axis of the second optical system, and a length s orthogonal to a second direction of the first direction; and the second optical system The plurality of electron beams are irradiated into the exposure field.    The electron beam apparatus of claim 81, wherein the rectangular exposure field has an aspect ratio t/s of 1/12 to 1/4.    The electron beam apparatus of claim 81 or 82, wherein the exposure field is set to include an optical axis of the second optical system.    The electron beam apparatus according to any one of claims 81 to 83, wherein the first optical system includes a reduced projection optical system; the second optical system is a reduced electron optical system; and the exposure field is set in the second optical system The aberration is within the effective area.    The electron beam apparatus of any one of claims 1 to 84, wherein the photovoltaic element has an electron emission surface; further comprising a vacuum chamber in which the electron emission surface and the second optical system are disposed; and the plurality of strips in the vacuum chamber An electron beam is irradiated onto the target.    An electron beam apparatus according to claim 85, wherein the function of the photovoltaic element serves as a partition wall separating the vacuum chamber from the outer space thereof.    The electron beam apparatus according to claim 85 or 86, wherein the vacuum chamber includes a first chamber in which the electron emission surface is disposed and a second chamber in which the second optical system is disposed.    The electron beam apparatus according to any one of claims 1 to 87, further comprising: a first support member that supports a cover member that is detached from a body portion of the photoelectric element that is disposed in an internal space of the internal space; and an actuator For moving the first supporting member; the body portion has an opening; the cover member can be detachably attached to the body portion in such a manner that the opening can be closed; after the cover member is detached from the body portion, When the cover member supported by the first support member is moved to the standby position, electrons emitted from the electron emission surface can move toward the second optical system through the opening.    The electron beam apparatus of claim 88, wherein the first support member has an opening; and when the cover member supported by the first support member moves to a position to be avoided, an opening of the first support member is disposed on the body The electrons emitted from the electron emission surface between the portion and the second optical system are transmitted through the opening of the main body portion and the opening of the first support member toward the second optical system.    The electron beam apparatus of claim 88 or 89, wherein a sealing member located between the body portion and the cover member is attached to at least one of the body portion and the cover member when the cover member is attached to the body portion.    The electron beam apparatus according to any one of claims 88 to 90, wherein the first support member is provided with an extraction electrode for accelerating electrons emitted from the electron emission surface toward the second optical system.    The electron beam apparatus according to any one of claims 88 to 91, wherein the first support member is provided with a sensor capable of measuring an intensity of an electron beam incident on the second optical system.    The electron beam apparatus according to any one of claims 88 to 92, wherein the operation of attaching the cover member to the main body portion and the operation of detaching the cover member from the main body portion are performed in an internal space of the main body portion and The space around the body portion is performed under vacuum.    The electron beam apparatus according to any one of claims 88 to 93, wherein the inner space is maintained in a vacuum state by attaching the body portion to the cover member.    The electron beam apparatus according to any one of claims 88 to 94, further comprising: a second supporting member that supports the main body portion to be detachable; and the main body portion is detachable in a state in which the cover member is attached to the main body portion It is detached from the second support member.    The electron beam apparatus according to any one of claims 1 to 95, comprising a plurality of the optical elements, the first optical system, and the second optical system.    The electron beam apparatus according to any one of claims 1 to 96, further comprising: a movable stage supporting the target; and a control device that controls movement of the movable stage and adjusts illumination to the target The illumination state of the electron beam.    A lithography process-containing component manufacturing method, the lithography process comprising: forming a line and space pattern on a target object, and forming an electron beam device according to any one of claims 1 to 97 to form the line and space The action of cutting the pattern of the line of the pattern.    An exposure method for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: transmitting a plurality of light beams generated from a plurality of light beams from the optical element through the first optical system Illuminating the operation of the photovoltaic element, the optical element providing a plurality of individually controllable light beams; and electrons emitted from the photovoltaic element by the plurality of light beams being emitted from the photovoltaic element as a plurality of electron beams from the second optical The operation of the system to illuminate the target; the intensity of at least one of the plurality of beams incident on the optoelectronic component is changeable.    An exposure method for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: transmitting a plurality of light beams generated from a plurality of light beams from the optical element through the first optical system Irradiating the photoelectric element, the optical element having a plurality of movable reflective elements, providing a plurality of individually controllable light beams; and electrons emitted from the photovoltaic element by the plurality of light beams being incident on the photovoltaic element as a plurality Actuating the electron beam from the second optical system to the target object; at least one of the plurality of light beams irradiated to the photoelectric element is generated by light from a plurality of the movable reflective elements, and can be controlled by The plurality of movable reflecting elements can change the strength.    An exposure method for irradiating light to a photovoltaic element and irradiating electrons generated from the photovoltaic element as an electron beam to a target object, comprising: transmitting a plurality of light beams generated from a plurality of light beams from the optical element through the first optical system Illuminating the operation of the photovoltaic element, the optical element providing a plurality of individually controllable light beams; and electrons emitted from the photovoltaic element by the plurality of light beams being emitted from the photovoltaic element as a plurality of electron beams from the second optical The operation of the system to illuminate the target; one of the plurality of light beams that are incident on the photovoltaic element can be generated by more than two of the plurality of light beams from the optical element, and more than two of the plurality of light beams in the portion The intensity of one beam generated by the beam is changeable.    The exposure method according to any one of claims 99 to 101, wherein the target object is irradiated with a plurality of the electron beams while moving in a first direction orthogonal to an optical axis of the second optical system.    A lithography process-containing component manufacturing method, the lithography process comprising: forming a line and space pattern on a target object, and performing an exposure method according to any one of claims 99 to 102 to form the line and space pattern The action of cutting the line pattern.