TW201835387A - Plating solution and method for producing plated product - Google Patents

Plating solution and method for producing plated product Download PDF

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TW201835387A
TW201835387A TW106144032A TW106144032A TW201835387A TW 201835387 A TW201835387 A TW 201835387A TW 106144032 A TW106144032 A TW 106144032A TW 106144032 A TW106144032 A TW 106144032A TW 201835387 A TW201835387 A TW 201835387A
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plating
mol
plating solution
concentration
less
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TW106144032A
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繩舟秀美
西脇宏
村田敏一
吉岡秀浩
龜川美幸
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日商太科諾滾輪股份有限公司
日商府梭股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/04Electroplating: Baths therefor from solutions of chromium
    • C25D3/06Electroplating: Baths therefor from solutions of chromium from solutions of trivalent chromium
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/04Electroplating: Baths therefor from solutions of chromium
    • C25D3/10Electroplating: Baths therefor from solutions of chromium characterised by the organic bath constituents used

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Provided is a plating solution that includes chromium sulfate and formic acid, in which Cr<SP>3+</SP> ion concentration is 0.1 mol/L or more and 1 mol/L or less, and formic acid concentration is 0.05 mol/L or more and 0.2 mol/L or less.

Description

鍍覆液及鍍覆製品之製造方法Manufacturing method of plating liquid and plating products

[相關申請案之相互參照][Cross-reference of related applications]

本案係主張日本發明專利申請案第2017-21006號之優先權,且藉由引用而併入至本案說明書之記載中。This case claims the priority of Japanese Invention Patent Application No. 2017-21006, and is incorporated into the description of the specification of this case by reference.

本發明係關於一種鍍覆液及鍍覆製品之製造方法,更詳細而言,關於一種用於三價鉻鍍覆之鍍覆液、及實施三價鉻鍍覆而成之鍍覆製品之製造方法。The present invention relates to a method for manufacturing a plating solution and a plated product, and more specifically, to a method for manufacturing a plating solution for trivalent chromium plating and a plated product obtained by performing trivalent chromium plating. method.

先前,廣泛使用對金屬製品或塑膠製品實施鍍鉻而成之鍍覆製品。於製造此種鍍覆製品時,利用包含對環境友好之三價鉻之鍍覆液代替包含六價鉻之鍍覆液的場景增加(參照下述專利文獻1)。Previously, plated products obtained by chromium-plating metal or plastic products have been widely used. When manufacturing such a plated product, the use of a plating solution containing environmentally friendly trivalent chromium instead of a plating solution containing hexavalent chromium has increased (see Patent Document 1 below).

[先前技術文獻][Prior technical literature]

[專利文獻][Patent Literature]

[專利文獻1]日本專利公開公報第2000-249340號[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-249340

[發明所欲解決之問題][Problems to be solved by the invention]

近年來由於環境意識之提高,故而強烈希望採用三價鉻鍍覆以替換六價鉻鍍覆。然而,三價鉻鍍覆在對於成為實施鍍覆之對象之製品之均鍍性方面上較六價鉻鍍覆差,因此現狀為採用三價鉻鍍覆之場景受限。又,於三價鉻鍍覆中,電流密度與鍍覆之析出厚度之關係難以成為線性者,而難以發揮均一電沈積性。根據此種情況,於鍍層厚度為數μm等級之裝飾鍍覆等中可見三價鉻鍍覆之採用事例,但於製作模具之類之複雜形狀之鍍覆製品的場景、或如製作厚鍍覆製品之場景,幾乎不會採用三價鉻鍍覆。因此,本發明提供一種雖為三價鉻鍍覆用鍍覆液,但可製作與六價鉻鍍覆同等之鍍覆製品之鍍覆液,甚至以擴大對環境友好之鍍覆製品之應用範圍為目的。In recent years, due to the improvement of environmental awareness, it is strongly desired to use trivalent chromium plating instead of hexavalent chromium plating. However, trivalent chromium plating is inferior to hexavalent chromium plating in terms of the uniformity of plating to products that are subject to the plating, so the current situation is that the use of trivalent chromium plating is limited. Moreover, in trivalent chromium plating, it is difficult to make the relationship between the current density and the deposited thickness of the plating linear, and it is difficult to exhibit uniform electrodeposition. According to this situation, examples of the use of trivalent chromium plating can be seen in decorative plating with a coating thickness of several μm level, but in the scene of manufacturing complex-shaped plated products such as molds or thick-plated products. In this scenario, trivalent chromium plating is rarely used. Therefore, the present invention provides a plating solution for trivalent chromium plating, but can produce a plating product equivalent to hexavalent chromium plating, and even expand the application range of environmentally friendly plating products. for purpose.

[解決問題之技術手段][Technical means to solve the problem]

為了達成如上述之目的,本發明者進行了努力研究,結果發現:藉由於包含硫酸鉻之鍍覆液中將Cr3+ 離子之濃度調整為特定之範圍內,該鍍覆液表現出與包含六價鉻之鍍覆液同等之均鍍性,從而完成本發明。In order to achieve the above-mentioned object, the present inventors conducted diligent research, and found that by adjusting the concentration of Cr 3+ ions to a specific range in a plating solution containing chromium sulfate, the plating solution exhibited and contained The plating solution of hexavalent chromium has the same uniform plating property, thereby completing the present invention.

即,本發明提供一種鍍覆液,其係用於三價鉻鍍覆者,且包含硫酸鉻及甲酸,Cr3+ 離子之濃度為0.1 mol/L以上且1 mol/L以下,上述甲酸之濃度為0.05 mol/L以上且0.2 mol/L以下。That is, the present invention provides a plating solution, which is used for trivalent chromium plating, and contains chromium sulfate and formic acid, and the concentration of Cr 3+ ions is 0.1 mol / L or more and 1 mol / L or less. The concentration is 0.05 mol / L or more and 0.2 mol / L or less.

又,本發明提供一種鍍覆製品之製造方法,其係實施於收容有包含硫酸鉻之鍍覆液之鍍浴中進行電鍍之鍍覆步驟,而製作藉由該鍍覆步驟實施過三價鉻鍍覆之鍍覆製品者,且於上述鍍覆步驟中,使用Cr3+ 離子之濃度為0.1 mol/L以上且1 mol/L以下之鍍覆液作為上述鍍覆液,將上述鍍浴中之浴溫設為20℃以上且未達40℃,且將上述電鍍中之電流密度設為2 A/dm2 以上且20 A/dm2 以下。In addition, the present invention provides a method for manufacturing a plated product, which is performed by performing a plating step of performing plating in a plating bath containing a plating solution containing chromium sulfate, and producing a trivalent chromium that has been subjected to the plating step. Those who have plated a plating product, and in the above-mentioned plating step, use a plating solution having a concentration of Cr 3+ ions of 0.1 mol / L or more and 1 mol / L or less as the above-mentioned plating solution. The bath temperature is set to 20 ° C. or more and less than 40 ° C., and the current density in the above-mentioned plating is set to 2 A / dm 2 or more and 20 A / dm 2 or less.

以下,對本發明之較佳實施形態進行說明。首先,對鍍覆製品之製造方法進行說明。於本實施形態之鍍覆製品之製造方法中,實施預處理步驟,其用以調整成為實施鍍覆之對象之製品(以下,亦稱為「原製品」)之表面性狀;及鍍覆步驟,其對經預處理之原製品(以下,亦稱為「預處理品」)實施三價鉻鍍覆。於本實施形態之鍍覆製品之製造方法中,亦可視需要於預處理步驟與鍍覆步驟之間實施底層鍍覆步驟,其對預處理品實施底層鍍覆;或中間鍍覆步驟,其對經底層鍍覆之預處理品(以下,亦稱為「底層鍍覆品」)進而實施中間鍍覆。於此情形時,三價鉻鍍覆係以對於實施過中間鍍覆之製品(以下,亦稱為「中間鍍覆品」)之精鍍覆的形式實施。Hereinafter, preferred embodiments of the present invention will be described. First, a method for manufacturing a plated product will be described. In the method for manufacturing a plated product according to this embodiment, a pretreatment step is performed to adjust the surface properties of a product (hereinafter, also referred to as "original product") to be subjected to plating; and a plating step, It performs trivalent chromium plating on a pre-processed original product (hereinafter, also referred to as a "pre-processed product"). In the method for manufacturing a plated product in this embodiment, an under-plating step may also be performed between the pre-treatment step and the plating step, which may perform under-plating on the pre-treatment product; or an intermediate plating step, which may The under-plated pretreatment product (hereinafter, also referred to as "under-plated product") is further subjected to intermediate plating. In this case, trivalent chromium plating is performed in the form of fine plating on a product subjected to intermediate plating (hereinafter, also referred to as "intermediate plating product").

於本實施形態之鍍覆製品之製造方法中,亦可對在鍍覆步驟中實施過三價鉻鍍覆之製品進而實施化學表面處理或熱處理等。又,亦可視需要對鍍覆製品實施透明塗裝等塗裝。In the manufacturing method of the plated product of this embodiment, the product which has been subjected to trivalent chromium plating in the plating step may be further subjected to chemical surface treatment or heat treatment. In addition, if necessary, the plated product may be coated with a coating such as transparent coating.

作為供實施預處理步驟之上述原製品,例如可列舉:樹脂製品、陶瓷製品、金屬製品、組合樹脂零件及金屬零件而成之複合製品、以及於金屬零件被覆陶瓷而成之複合製品等。作為形成原製品之樹脂,例如可列舉一般之熱塑性樹脂或熱硬化性樹脂。該樹脂亦可為纖維強化塑膠(FRP)等。作為形成原製品之上述陶瓷,例如可列舉以氧化矽或氧化鋁等作為主成分之一般者。作為上述陶瓷,可為琺瑯等玻璃質者。作為形成原製品之上述金屬,例如可列舉鐵或銅等一般之金屬。上述金屬亦可為合金等。作為對於此種原製品之預處理,例如可列舉利用機械研磨、搪磨(honing)加工、噴擊加工等之研磨、或鹼脫脂等脫脂。於上述底層鍍覆步驟或上述中間鍍覆步驟中,可以精鍍覆製品之美觀或耐蝕性之提昇等為目的,而以數μm之厚度對預處理品或底層鍍覆品實施鍍鎳、鍍銅、鍍鐵等各種鍍覆。Examples of the above-mentioned original products to be subjected to the pretreatment process include resin products, ceramic products, metal products, composite products made of a combination of resin parts and metal parts, and composite products made of metal parts coated with ceramics. Examples of the resin forming the original product include general thermoplastic resins and thermosetting resins. The resin can also be fiber reinforced plastic (FRP). As said ceramic which forms an original product, the general one which has silicon oxide, alumina, etc. as a main component is mentioned, for example. The ceramics may be glassy materials such as enamel. Examples of the metal forming the original product include general metals such as iron and copper. These metals may be alloys or the like. Examples of the pretreatment of such an original product include grinding by mechanical grinding, honing processing, spray processing, and the like, and degreasing such as alkali degreasing. In the above-mentioned underlying plating step or the above-mentioned intermediate plating step, the pre-treated product or the under-plated product can be nickel-plated or plated with a thickness of several μm for the purpose of improving the appearance or corrosion resistance of the plated product. Various platings such as copper and iron plating.

於實施三價鉻鍍覆之上述鍍覆步驟中,實施以預處理品、底層鍍覆品及中間鍍覆品等作為工件之電鍍。於該電鍍中,使用收容有包含硫酸鉻之鍍覆液之鍍浴對上述工件實施三價鉻鍍覆。以下,對該鍍覆步驟中所使用之鍍覆液詳細地進行說明。In the above-mentioned plating step in which trivalent chromium plating is performed, electroplating using a pretreatment product, a bottom plating product, an intermediate plating product, and the like as workpieces is performed. In this electroplating, the workpiece is subjected to trivalent chromium plating using a plating bath containing a plating solution containing chromium sulfate. Hereinafter, the plating solution used in the plating step will be described in detail.

於上述鍍覆步驟中,就對工件進行均鍍性良好之鍍覆之方面而言,重要的是使用Cr3+ 離子之濃度為0.1 mol/L以上且1 mol/L以下之鍍覆液作為上述鍍覆液。於該鍍覆液中,除成為主成分之硫酸鉻以外,亦可含有錯合劑、pH值緩衝劑、導電劑及界面活性劑等。再者,作為成為該鍍覆液之溶劑之水,例如可列舉:工業用水、自來水、離子交換水、蒸餾水、純水等。In the above-mentioned plating step, it is important to use a plating solution having a concentration of Cr 3+ ions of 0.1 mol / L or more and 1 mol / L or less in terms of plating with good uniformity on the workpiece. The above plating solution. The plating solution may contain a complexing agent, a pH buffering agent, a conductive agent, a surfactant, and the like in addition to chromium sulfate as a main component. Examples of water used as a solvent of the plating solution include industrial water, tap water, ion-exchanged water, distilled water, and pure water.

上述硫酸鉻係如上述般以鍍浴中之Cr3+ 離子之濃度成為0.1 mol/L以上且1 mol/L以下之方式含於鍍覆液中。該硫酸鉻較佳為以鍍浴中之Cr3+ 離子之濃度成為0.1 mol/L以上且0.3 mol/L以下之方式含於鍍覆液中。藉由使用此種較佳之鍍覆液,可使鍍覆步驟中之對工件之三價鉻鍍覆之均鍍性變得更良好。The chromium sulfate is contained in the plating solution such that the concentration of Cr 3+ ions in the plating bath is 0.1 mol / L or more and 1 mol / L or less as described above. The chromium sulfate is preferably contained in the plating solution such that the concentration of Cr 3+ ions in the plating bath is 0.1 mol / L or more and 0.3 mol / L or less. By using such a preferred plating solution, the uniformity of the trivalent chromium plating of the workpiece in the plating step can be made better.

於本實施形態之鍍覆液中,亦可將作為Cr3+ 離子之供給源含有之硫酸鉻之一部分替換為選自由鹽酸鉻、鹼性硫酸鉻、鉻明礬及硝酸鉻所組成之群中的1種以上,但若含有較多之鹽酸鉻,則有於鍍覆時於陽極產生氯氣之虞,若含有較多之硝酸鉻,則有於鍍覆時導致電流密度降低之虞。因此,鍍覆液中之硫酸鉻占Cr3+ 離子之供給源之比率較佳為90 mol%以上。硫酸鉻之比率更佳為95 mol%以上,進而較佳為99 mol%以上。鍍覆液中之Cr3+ 離子之供給源尤佳為實質上僅為硫酸鉻。In the plating solution of this embodiment, a part of chromium sulfate contained as a supply source of Cr 3+ ions may be replaced with one selected from the group consisting of chromium hydrochloride, alkaline chromium sulfate, chromium alum, and chromium nitrate. One or more types, but if a large amount of chromium hydrochloride is contained, chlorine gas may be generated at the anode during plating, and if a large amount of chromium nitrate is contained, current density may be reduced during plating. Therefore, the ratio of chromium sulfate in the plating solution to the supply source of Cr 3+ ions is preferably 90 mol% or more. The ratio of chromium sulfate is more preferably 95 mol% or more, and still more preferably 99 mol% or more. A particularly preferred supply source of Cr 3+ ions in the plating solution is substantially only chromium sulfate.

作為本實施形態之鍍覆液所含有之上述錯合劑,可使用有機酸或其鹽。作為該有機酸,例如可列舉:草酸、檸檬酸、甲酸、順丁烯二酸、丙二酸、酒石酸、蘋果酸、乙酸、鄰苯二甲酸、丙酸、乙二胺四乙酸等。作為該等之鹽,例如可列舉:鋰鹽、鉀鹽、鈉鹽等鹼金屬鹽;鎂鹽、鈣鹽等鹼土金屬鹽。其中,上述甲酸係作為錯合劑尤其有效之成分,且重要的是以濃度成為0.05 mol/L以上且0.2 mol/L以下之方式含於鍍覆液中。鍍覆液中之上述甲酸之濃度更佳為0.08 mol/L以上且0.12 mol/L以下。As the said complexing agent contained in the plating liquid of this embodiment, an organic acid or its salt can be used. Examples of the organic acid include oxalic acid, citric acid, formic acid, maleic acid, malonic acid, tartaric acid, malic acid, acetic acid, phthalic acid, propionic acid, and ethylenediaminetetraacetic acid. Examples of such salts include alkali metal salts such as lithium salts, potassium salts, and sodium salts; and alkaline earth metal salts such as magnesium salts and calcium salts. Among them, the aforementioned formic acid is particularly effective as a complexing agent, and it is important that the formic acid is contained in the plating solution in a concentration of 0.05 mol / L or more and 0.2 mol / L or less. The concentration of the formic acid in the plating solution is more preferably 0.08 mol / L or more and 0.12 mol / L or less.

關於上述有機酸或其鹽,亦作為上述pH值緩衝劑發揮一定以上之效果。又,作為上述錯合劑,可採用脲或胺基甲酸等胺基羰基化合物。其中,脲具有作為pH值緩衝劑之功能,並且作為對於鍍覆被膜之氮之供給源發揮作用,而對被膜之硬質化較為有效。進而對於脲,可期待如下效果,即抑制於鍍覆液中產生氫氧化鉻等沈澱物。就此種方面而言,上述脲較佳為以濃度成為0.1 mol/L以上且1 mol/L以下之方式含於鍍覆液中。鍍覆液中之上述脲之濃度更佳為0.2 mol/L以上且0.8 mol/L以下,尤佳為0.4 mol/L以上且0.6 mol/L以下。The organic acid or a salt thereof also exerts a certain effect or more as the pH buffering agent. As the complexing agent, an amine carbonyl compound such as urea or urethane can be used. Among them, urea has a function as a pH buffer, and functions as a supply source of nitrogen for the coating film, and is more effective for hardening the film. Furthermore, for urea, the effect of suppressing the generation of precipitates such as chromium hydroxide in the plating solution can be expected. In this respect, the urea is preferably contained in the plating solution so that the concentration becomes 0.1 mol / L or more and 1 mol / L or less. The concentration of the aforementioned urea in the plating solution is more preferably 0.2 mol / L or more and 0.8 mol / L or less, and even more preferably 0.4 mol / L or more and 0.6 mol / L or less.

若列舉除如上所述者以外亦可用作上述pH值緩衝劑者,則例如可列舉硼酸或硼酸鹽等。於鍍覆液中含有該硼酸之情形時,雖亦取決於作為上述pH值緩衝劑含有之有機酸或脲等之量等,但通常以成為0.5 mol/L以上且1 mol/L以下之濃度之方式含於鍍覆液中。上述鍍覆液較佳為藉由pH值緩衝劑等而將pH值調整為1以上且2以下,更佳為以成為1.3以上且1.7以下之pH值之方式進行調整。Examples of those that can be used as the pH buffering agent other than those described above include, for example, boric acid or borate. When the boric acid is contained in the plating solution, although it depends on the amount of organic acid, urea, etc. contained in the above-mentioned pH buffer, it is usually at a concentration of 0.5 mol / L or more and 1 mol / L or less. The method is contained in the plating solution. The plating solution is preferably adjusted to a pH value of 1 or more and 2 or less with a pH buffer or the like, and more preferably adjusted to a pH value of 1.3 or more and 1.7 or less.

作為上述導電劑,例如可列舉:氯化銨、氯化鈉、氯化鉀、硫酸銨、硫酸鈉、硫酸鉀、硝酸銨、硝酸鈉、硝酸鉀等。又,作為上述界面活性劑,例如可列舉:月桂基硫酸鈉、十二烷基硫酸鈉、聚乙二醇、磺基琥珀酸二異己酯、硫酸2-乙基己酯、磺基琥珀酸二異丁酯、磺基琥珀酸二異戊酯、磺基琥珀酸異癸酯等。Examples of the conductive agent include ammonium chloride, sodium chloride, potassium chloride, ammonium sulfate, sodium sulfate, potassium sulfate, ammonium nitrate, sodium nitrate, and potassium nitrate. Examples of the surfactant include sodium lauryl sulfate, sodium lauryl sulfate, polyethylene glycol, diisohexyl sulfosuccinate, 2-ethylhexyl sulfate, and disulfo succinate. Isobutyl ester, diisoamyl sulfosuccinate, isodecyl sulfosuccinate, and the like.

於上述鍍覆液中,可含有聚乙二醇、聚乙烯醇、明膠等被膜形成劑、消泡劑等各種者作為其他添加劑。The plating solution may contain various additives such as a film-forming agent such as polyethylene glycol, polyvinyl alcohol, and gelatin, and an antifoaming agent.

於使用包含此種成分之鍍覆液之鍍覆步驟中,重要的是將上述鍍浴中之浴溫設為20℃以上且未達40℃。於上述鍍覆步驟中之鍍浴之浴溫為低溫時,可使對工件之三價鉻鍍覆之均鍍性變得更良好。另一方面,於鍍浴之浴溫具有一定以上之溫度時,可抑制鍍覆液中所包含之成分之析出,而可抑制鍍覆表面產生粗澀。就此種方面而言,上述鍍覆步驟中之鍍浴之浴溫更佳為23℃以上且29℃以下,尤佳為24℃以上且28℃以下。藉由於此種較佳之溫度條件下實施鍍覆步驟,可使精鍍覆製品具備厚度均一且表面光澤優異之鍍覆被膜。In the plating step using a plating solution containing such a component, it is important to set the bath temperature in the above-mentioned plating bath to 20 ° C or higher and less than 40 ° C. When the bath temperature of the plating bath in the above-mentioned plating step is low temperature, the uniformity of the trivalent chromium plating on the workpiece can be made better. On the other hand, when the bath temperature of the plating bath has a certain temperature or more, the precipitation of components contained in the plating solution can be suppressed, and the occurrence of coarseness in the plating surface can be suppressed. In this respect, the bath temperature of the plating bath in the above-mentioned plating step is more preferably 23 ° C or higher and 29 ° C or lower, and particularly preferably 24 ° C or higher and 28 ° C or lower. By performing the plating step under such a preferable temperature condition, the finely plated product can be provided with a plating film having a uniform thickness and excellent surface gloss.

於上述鍍覆步驟中之電鍍中,重要的是將電流密度設為2 A/dm2 以上且20 A/dm2 以下。上述電流密度更佳為2 A/dm2 以上且15 A/dm2 以下,尤佳為設為2 A/dm2 以上且13 A/dm2 以下。藉由以此種較佳之電流密度實施鍍覆,可使對工件之三價鉻鍍覆之均鍍性變得更良好。In the electroplating in the above-mentioned plating step, it is important to set the current density to 2 A / dm 2 or more and 20 A / dm 2 or less. More preferably that the current density was 2 A / dm 2 or more and 2 or less 15 A / dm, and particularly preferably set to 2 A / dm 2 or more and 2 or less 13 A / dm. By performing plating at such a preferable current density, the uniformity of the trivalent chromium plating on the workpiece can be made better.

於上述鍍覆步驟中,由於在鍍覆液中產生由氫氣引起之氣泡,故而為了抑制氣泡附著於工件,可使鍍覆中之工件振動,或者實施使由惰性氣體等引起之氣泡自工件之下方產生之起泡處理等。In the above-mentioned plating step, bubbles caused by hydrogen gas are generated in the plating solution. Therefore, in order to suppress bubbles from adhering to the workpiece, the workpiece during plating can be vibrated, or bubbles caused by inert gas or the like can be removed from the workpiece. Foaming treatment generated underneath.

關於如上述之鍍覆液之成分濃度、鍍覆液之浴溫、對工件賦予之電流密度等鍍覆步驟中之各種條件,雖並非必須於自剛開始鍍覆步驟後直至完成鍍覆步驟之期間始終保持在如上述之範圍內才會發揮其效果,但較佳為於整個期間處於與鍍覆開始時大致相同之條件下。Regarding the various conditions in the plating steps such as the component concentration of the plating solution, the bath temperature of the plating solution, and the current density imparted to the workpiece, it is not necessary to start from the beginning of the plating step until the completion of the plating step. The effect is always exhibited when the period is kept within the above-mentioned range, but it is preferable that the entire period is under substantially the same conditions as when the plating is started.

於本實施形態之上述鍍覆步驟中,即便於工件之角部或微細之凹凸部等先前鍍層厚度易與平坦部不同之部分,亦以與平坦部同等之厚度實施鍍鉻,而發揮雖為三價鉻鍍覆但與六價鉻鍍覆同樣之均鍍性及均一電沈積性。本實施形態中所製作之鍍覆製品中之鍍層厚度可視該鍍覆製品之用途等適當設定,就更顯著地發揮本發明之效果之方面而言,較佳為將除底層鍍覆等以外之僅三價鉻鍍覆部分之鍍層厚度設為5 μm以上且600 μm以下。上述鍍層厚度更佳為50 μm以上,尤佳為100 μm以上。於必須測定該鍍層厚度之情形時,例如藉由螢光X射線式膜厚計等進行測定即可。但是,若鍍層厚度成為50 μm以上,則變得難以藉由螢光X射線式膜厚計進行測定,因此於此種情形時,藉由掃描式電子顯微鏡(SEM)實施鍍覆製品之剖面觀察即可。而且,上述鍍層厚度可藉由於隨機選擇之數處測定鍍覆製品之鍍層厚度,並對除異常值以外之測定結果進行算術平均而求出。In the above-mentioned plating step of this embodiment, chrome plating is performed at a thickness equal to that of the flat portion even in areas where the thickness of the previous plating layer, such as a corner portion or a fine uneven portion of the workpiece, is likely to be different from that of the flat portion. Valence chromium plating, but the same uniformity and uniform electrodeposition as hexavalent chromium plating. The thickness of the plating layer in the plated product produced in this embodiment can be appropriately set depending on the use of the plated product and the like. In terms of more prominently exerting the effects of the present invention, it is preferable to use a layer other than the underlying plated layer. Only the plating thickness of the trivalent chromium plating portion is set to 5 μm or more and 600 μm or less. The thickness of the plating layer is more preferably 50 μm or more, and even more preferably 100 μm or more. When it is necessary to measure the thickness of the plating layer, it may be measured by, for example, a fluorescent X-ray film thickness meter or the like. However, if the thickness of the plating layer is 50 μm or more, it becomes difficult to measure it with a fluorescent X-ray film thickness meter. Therefore, in this case, the cross-sectional observation of the plated product is performed using a scanning electron microscope (SEM) Just fine. In addition, the above-mentioned plating thickness can be obtained by measuring the plating thickness of the plated product at a number of randomly selected points and arithmetically averaging the measurement results other than the abnormal value.

再者,此處不重複更詳細之說明,但對於本實施形態中之鍍覆製品之製造方法或鍍覆所使用之鍍覆液,即便為關於該等上述無具體例示之事項,亦可於不會明顯有損本發明之效果之範圍內適當採用先前公知之技術事項。即,本發明並不限定於上述例示之範圍內者。In addition, the detailed description will not be repeated here, but the manufacturing method of the plated product or the plating solution used for the plating in this embodiment may be used in matters not specifically illustrated above. As long as the effect of the present invention is not significantly impaired, previously known technical matters are appropriately adopted. In other words, the present invention is not limited to the above-mentioned examples.

[實施例][Example]

其次,列舉實施例而進一步詳細地說明本發明,但本發明並不限定於該等。Next, the present invention will be described in more detail with examples, but the present invention is not limited to these.

(本發明之概要:與先前之三價鉻鍍覆之不同)(Summary of the invention: different from the previous trivalent chromium plating)

將一般文獻等中所揭示之六價鉻鍍覆及三價鉻鍍覆中之電流密度與鍍層厚度之關係示於圖1。根據該圖可知,於先前之三價鉻鍍覆中,表示電流密度與鍍層厚度之關係之直線之斜率於電流密度為5 A/dm2 附近時急遽變大,而難以發揮均一電沈積性。又,根據該圖可知,於先前之三價鉻鍍覆中,難以以5 A/dm2 以下之電流密度進行鍍覆,而難以進行均鍍性優異之鍍覆。The relationship between the current density and the plating thickness in the hexavalent chromium plating and trivalent chromium plating disclosed in the general literature and the like is shown in FIG. 1. According to the figure, in the previous trivalent chromium plating, the slope of the straight line representing the relationship between the current density and the thickness of the plating layer suddenly increased when the current density was around 5 A / dm 2 , making it difficult to exert uniform electrodeposition. In addition, according to the figure, it was found that in the conventional trivalent chromium plating, it was difficult to perform plating at a current density of 5 A / dm 2 or less, and it was difficult to perform plating with excellent uniformity.

相對於此,於使用本發明之鍍覆液之情形時,電流密度與鍍層厚度之關係係如圖2所示,可以與六價鉻鍍覆相同之5 A/dm2 以下之較低電流密度進行三價鉻鍍覆。又,於使用本發明之鍍覆液之情形時,自5 A/dm2 以下之較低電流密度之區域直至30 A/dm2 附近之較高電流密度之區域,電流密度與鍍層厚度之關係成為線性者,而可實施均一電沈積性優異之鍍覆。因此,根據該圖亦可知,根據本發明,提供一種均鍍性及均一電沈積性優異之三價鉻鍍覆用鍍覆液。針對該方面,以下詳述研究結果。In contrast, when the plating solution of the present invention is used, the relationship between the current density and the thickness of the plating layer is as shown in FIG. 2, which can be lower than 5 A / dm 2, which is the same as that of hexavalent chromium plating. Trivalent chromium plating is performed. In the case of using the plating solution of the present invention, the relationship between the current density and the thickness of the plating layer ranges from a region with a lower current density below 5 A / dm 2 to a region with a higher current density near 30 A / dm 2 . Those who are linear can perform plating with excellent uniform electrodeposition. Therefore, it can also be seen from this figure that according to the present invention, a plating solution for trivalent chromium plating having excellent uniform plating properties and uniform electrodeposition properties is provided. In this regard, the results of the study are detailed below.

(評價1:浴溫1)(Evaluation 1: Bath temperature 1)

以成為表1所示之調配內容之方式製備鍍覆液。即,製備包含硫酸鉻且Cr3+ 離子之濃度為1 mol/L之鍍覆液。於該鍍覆液中,分別以成為0.5 mol/L之濃度之方式添加甲酸及脲。又,鍍覆液係以pH值成為1.5之方式製備。A plating solution was prepared in such a manner as to be prepared as shown in Table 1. That is, a plating solution containing chromium sulfate and having a Cr 3+ ion concentration of 1 mol / L was prepared. Formic acid and urea were added to the plating solution so as to have a concentration of 0.5 mol / L, respectively. The plating solution was prepared so that the pH value became 1.5.

[表1] [Table 1]

使用上述鍍覆液,以5 A之電流值實施霍爾槽試驗。再者,試驗係於30℃、35℃、40℃之3種浴溫下實施,試驗時間係設為10分鐘。將結果一併示於圖3、表1。Using the above plating solution, a Hall groove test was performed at a current value of 5 A. The test was performed at three bath temperatures of 30 ° C, 35 ° C, and 40 ° C, and the test time was 10 minutes. The results are shown in FIG. 3 and Table 1 together.

又,藉由螢光X射線型膜厚測定器測定試驗後之試樣之鍍層厚度。將其結果示於圖4。根據該表1或圖4所示之結果可知,藉由Cr3+ 離子之濃度為1 mol/L以下,而即便為電流密度較低之狀態,亦可確保一定以上之鍍層厚度。又,根據表1、圖4所示之結果判明,將浴溫設為未達40℃係於進行均鍍性優異之三價鉻鍍覆之方面上有利。The thickness of the plated layer of the sample after the test was measured with a fluorescent X-ray film thickness measuring device. The results are shown in FIG. 4. According to the results shown in Table 1 or FIG. 4, it can be known that even if the concentration of Cr 3+ ions is 1 mol / L or less, a certain thickness of the plating layer can be ensured even when the current density is low. From the results shown in Tables 1 and 4, it was found that setting the bath temperature to less than 40 ° C is advantageous in terms of performing trivalent chromium plating having excellent uniformity.

(評價2:浴溫2)(Evaluation 2: Bath temperature 2)

接受「評價1」之結果,將浴溫進一步細分化,於24℃、26℃、28℃、30℃、32℃之5種浴溫下實施霍爾槽試驗,以與「評價1」相同之方式評價試驗結果。將結果示於表2、圖5、6。Accept the results of "Evaluation 1" and further subdivide the bath temperature. The Hall bath test was performed at five bath temperatures of 24 ° C, 26 ° C, 28 ° C, 30 ° C, and 32 ° C. Way to evaluate test results. The results are shown in Tables 2 and 5 and 6.

[表2] [Table 2]

根據該表或圖亦可知,於浴溫為24℃至28℃之範圍內,可使各電流密度下之鍍覆被膜之析出為大致一定之速度。而且,可知浴溫為24℃時最可見均鍍性之提昇,於較低之浴溫下進行鍍覆可獲得較佳之結果。因此,進而亦研究降低浴之溫度,但發現若過度降低浴溫,則浴組成之一部分結晶化而於鍍覆表面產生粗澀,或者浴黏度變高而於陰極變得難以去除氫,故而判斷為浴溫最佳為24℃~28℃之範圍內。再者,藉由採用24℃~28℃之浴溫,而即便於電流密度較低之情形時亦可進行良好之鍍覆,該傾向於另外實施之彎曲陰極(bent cathode)試驗中亦確認到。It can also be known from the table or the graph that the precipitation of the plating film at each current density can be caused to have a substantially constant speed within a range of a bath temperature of 24 ° C to 28 ° C. In addition, it can be seen that the improvement in uniformity is most visible when the bath temperature is 24 ° C, and better results can be obtained by plating at a lower bath temperature. Therefore, the temperature of the bath was also lowered, but it was found that if the bath temperature was excessively lowered, a part of the bath composition crystallized to produce a coarseness on the plating surface, or the bath viscosity became higher and it became difficult to remove hydrogen at the cathode. The optimal bath temperature is in the range of 24 ° C to 28 ° C. In addition, by using a bath temperature of 24 ° C to 28 ° C, good plating can be performed even when the current density is low. The bent cathode test, which tends to be performed separately, is also confirmed. .

(評價3:浴濃度)(Evaluation 3: Bath concentration)

為了抑制浴黏度之降低或浴液結晶化來謀求均鍍性之提昇,而降低浴組成本身之濃度而實施霍爾槽試驗。具體而言,將浴組成設為4/5(Cr3+ 離子之濃度0.8 mol/L,甲酸及脲分別為0.4 mol/L)、3/5(Cr3+ 離子之濃度0.6 mol/L,甲酸及脲分別為0.3 mol/L)、1/2(Cr3+ 離子之濃度0.5 mol/L,甲酸及脲分別為0.25 mol/L),於浴溫度25℃下實施霍爾槽試驗。將結果示於表3及圖7。根據該表3或圖7亦明確可知,於該「評價3」中,於浴濃度較低時獲得良好之鍍覆被膜。再者,於另外實施之彎曲陰極試驗中亦確認到於將成分設為0.5倍之鍍覆液中獲得最佳之結果。In order to suppress the decrease of the bath viscosity or the crystallization of the bath liquid to improve the uniform plating property, the concentration of the bath composition itself is reduced to implement a Hall bath test. Specifically, the bath composition is set to 4/5 (the concentration of Cr 3+ ions is 0.8 mol / L, formic acid and urea are 0.4 mol / L, respectively), and 3/5 (the concentration of Cr 3+ ions is 0.6 mol / L, Formic acid and urea were 0.3 mol / L respectively, and 1/2 (0.5 mol / L of Cr 3+ ion concentration, and 0.25 mol / L for formic acid and urea were respectively). Hall bath tests were performed at a bath temperature of 25 ° C. The results are shown in Table 3 and Fig. 7. It is also clear from Table 3 or FIG. 7 that in the “Evaluation 3”, a good plating film was obtained when the bath concentration was low. Furthermore, it was also confirmed in a curved cathode test conducted separately that the best results were obtained in a plating solution having a composition of 0.5 times.

[表3] [table 3]

(評價4:甲酸及脲之添加量1)(Evaluation 4: Addition amount of formic acid and urea 1)

接受「評價3」之結果,嘗試浴濃度之進一步降低。具體而言,將浴組成設為1/4以及1/10而實施霍爾槽試驗。其結果為,成為雖均鍍性得到進一步改善但可見鍍覆之異常析出之結果。因此,將鉻離子濃度設為1/4(0.25 mol/L)、1/10(0.1 mol/L),並且使甲酸或脲恢復至初始之濃度(0.5 mol/L)。其結果為,如表4或圖8所示成為無異常析出,但均鍍性降低之結果。As a result of "Evaluation 3", the bath concentration was further reduced. Specifically, the Hall composition test was performed with the bath composition set to 1/4 and 1/10. As a result, although the uniform plating property was further improved, abnormal precipitation of the plating was visible. Therefore, the chromium ion concentration is set to 1/4 (0.25 mol / L) and 1/10 (0.1 mol / L), and the formic acid or urea is restored to the original concentration (0.5 mol / L). As a result, as shown in Table 4 or FIG. 8, there was no abnormal precipitation, but the uniform plating property was reduced.

[表4] [Table 4]

(評價5:甲酸及脲之添加量2)(Evaluation 5: Addition amount of formic acid and urea 2)

接受「評價4」之結果,藉由變更甲酸、脲之量而嘗試改善異常析出。根據霍爾槽試驗之結果(參照表5、圖9)可知,藉由使甲酸之濃度較低為0.1 mol/L,並將脲設為初始之濃度(0.5 mol/L),而均鍍性良好且異常析出得到抑制。Accepting the result of "Evaluation 4", an attempt was made to improve abnormal precipitation by changing the amounts of formic acid and urea. According to the results of the Hall groove test (refer to Tables 5 and 9), it can be seen that the uniformity of plating is reduced by lowering the concentration of formic acid to 0.1 mol / L and setting urea to the initial concentration (0.5 mol / L). Good and abnormal precipitation was suppressed.

[表5] [table 5]

繼而,將脲之濃度固定為0.5 mol/L,並使甲酸之濃度自0.1 mol/L變化至0.22 mol/L而確認是否改善均鍍性。將結果示於表6、圖10。Then, the concentration of urea was fixed to 0.5 mol / L, and the concentration of formic acid was changed from 0.1 mol / L to 0.22 mol / L to confirm whether the uniform plating property was improved. The results are shown in Table 6 and Fig. 10.

[表6] [TABLE 6]

根據該表或圖可知,甲酸之濃度為0.2 mol/L以下時獲得良好之結果。It can be seen from the table or graph that good results are obtained when the concentration of formic acid is 0.2 mol / L or less.

又,進而使甲酸為低濃度而對均鍍性進行評價。將其結果示於表7、圖11。Further, the formic acid was evaluated for the low concentration of formic acid. The results are shown in Table 7 and Fig. 11.

[表7] [TABLE 7]

根據該表或圖可知,甲酸之濃度為0.05 mol/L以上時獲得良好之結果。使用具備將短條狀之金屬板彎折而側視下成為「コ字狀」之凹入部之陰極,於與表6、7所示之條件相同之條件下實施彎曲陰極試驗,結果可確認到於甲酸之濃度為0.05 mol/L以上且0.1 mol/L以下之範圍內,即便於凹入部亦6成以上之範圍實施有鍍覆。It can be seen from the table or the graph that good results are obtained when the concentration of formic acid is 0.05 mol / L or more. Using a cathode having a recessed portion in which a short metal plate is bent and turned into a "U-shape" in a side view, a curved cathode test was performed under the same conditions as those shown in Tables 6 and 7, and the results were confirmed. In a range of a concentration of formic acid of 0.05 mol / L or more and 0.1 mol / L or less, plating is performed in a range of 60% or more even in the recessed portion.

關於如上述般包含硫酸鉻之三價鉻鍍覆用之鍍覆液,確認到藉由將Cr3+ 離子之濃度設為0.1 mol/L以上且1 mol/L以下之範圍,且將甲酸之濃度設為0.05 mol/L以上且0.2 mol/L以下,而表現出良好之均鍍性。又,確認到該鍍覆液於Cr3+ 離子之濃度為0.1 mol/L~0.3 mol/L之範圍內表現出尤其良好之均鍍性。進而根據上述評價確認到有效的是將鍍浴中之浴溫設為20℃以上且未達40℃。根據此種情況亦可知,根據本發明,可提供一種均鍍性優異之三價鉻鍍覆用鍍覆液,而擴大對環境友好之鍍覆製品之應用範圍。Regarding the plating solution for trivalent chromium plating containing chromium sulfate as described above, it was confirmed that the concentration of Cr 3+ ions was set to a range of 0.1 mol / L or more and 1 mol / L or less. When the concentration is set to 0.05 mol / L or more and 0.2 mol / L or less, good uniform plating properties are exhibited. In addition, it was confirmed that the plating solution exhibited particularly good uniform plating properties in a range of Cr 3+ ion concentration in a range of 0.1 mol / L to 0.3 mol / L. Furthermore, it was confirmed from the above evaluation that it is effective to set the bath temperature in the plating bath to 20 ° C or higher and less than 40 ° C. It can also be known from this situation that according to the present invention, a plating solution for trivalent chromium plating having excellent uniformity can be provided, thereby expanding the application range of environmentally-friendly plating products.

no

圖1係一般文獻等中所揭示之六價鉻鍍覆及三價鉻鍍覆中之電流密度與鍍層厚度之關係圖。 圖2係表示使用本發明之鍍覆液之三價鉻鍍覆中之電流密度與鍍層厚度之關係的圖。 圖3係表示使用一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖4係表示藉由螢光X射線型膜厚測定器測定鍍層厚度所獲得之結果之圖。 圖5係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖6係表示藉由螢光X射線型膜厚測定器測定鍍層厚度所獲得之結果之圖。 圖7係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖8係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖9係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖10係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。 圖11係表示使用另一實施形態之鍍覆液之霍爾槽試驗之結果的圖。FIG. 1 is a graph showing the relationship between the current density and the thickness of a plating layer in hexavalent chromium plating and trivalent chromium plating disclosed in general literature and the like. FIG. 2 is a graph showing the relationship between the current density and the thickness of a plating layer in trivalent chromium plating using the plating solution of the present invention. FIG. 3 is a graph showing the results of a Hall cell test using a plating solution according to an embodiment. FIG. 4 is a graph showing the results obtained by measuring the thickness of a plating layer using a fluorescent X-ray film thickness measuring device. FIG. 5 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment. FIG. 6 is a graph showing the results obtained by measuring the thickness of a plating layer using a fluorescent X-ray film thickness measuring device. FIG. 7 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment. FIG. 8 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment. FIG. 9 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment. FIG. 10 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment. FIG. 11 is a graph showing the results of a Hall cell test using a plating solution according to another embodiment.

Claims (3)

一種鍍覆液,其係用於三價鉻鍍覆者,且 包含硫酸鉻及甲酸,Cr3+ 離子之濃度為0.1 mol/L以上且1 mol/L以下,上述甲酸之濃度為0.05 mol/L以上且0.2 mol/L以下。A plating solution for trivalent chromium plating, which contains chromium sulfate and formic acid. The concentration of Cr 3+ ions is 0.1 mol / L or more and 1 mol / L or less. The concentration of the formic acid is 0.05 mol / L. L or more and 0.2 mol / L or less. 如請求項1之鍍覆液,其係用於鍍層厚度為5 μm以上之三價鉻鍍覆。For example, the plating solution of claim 1 is used for trivalent chromium plating with a thickness of 5 μm or more. 一種鍍覆製品之製造方法,其係實施於收容有包含硫酸鉻之鍍覆液之鍍浴中進行電鍍之鍍覆步驟,而製作藉由該鍍覆步驟實施過三價鉻鍍覆之鍍覆製品者,且 於上述鍍覆步驟中, 使用Cr3+ 離子之濃度為0.1 mol/L以上且1 mol/L以下之鍍覆液作為上述鍍覆液, 將上述鍍浴中之浴溫設為20℃以上且未達40℃,且 將上述電鍍中之電流密度設為2 A/dm2 以上且20 A/dm2 以下。A method for manufacturing a plated product is a plating step in which plating is performed in a plating bath containing a plating solution containing chromium sulfate, and a plating process in which trivalent chromium plating is performed by the plating step is produced. For the product, in the above-mentioned plating step, a plating solution having a Cr 3+ ion concentration of 0.1 mol / L or more and 1 mol / L or less is used as the above-mentioned plating solution, and the bath temperature in the above-mentioned plating bath is set to 20 ° C. or more and less than 40 ° C., and the current density in the above plating is set to 2 A / dm 2 or more and 20 A / dm 2 or less.
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