TW201835284A - Polishing composition - Google Patents

Abstract

Provided are: a polishing composition which can achieve both of a high polishing rate and a reduced edge roll-off amount while reducing an abrasive grain content; and a polishing composition which can produce a polished surface having good flatness and having a small difference in thickness between a near-edge part of a polished object and the center part of the polished object. Each of the polishing compositions provided herein comprises abrasive grains, water and an amine compound containing no ether bond, wherein the amine compound satisfies at least one of requirements (1) and (2) as mentioned below and the abrasive grain content in the polishing composition is 2% by weight or less: (1) the compound has a hydrocarbon group having at least three carbon atoms between two primary amino groups in the molecule and has no ether bond; and (2) the compound has a primary amino group and at least one of a secondary amino group and a tertiary amino group and has no ether bond. Alternatively, the polishing composition provided herein comprises abrasive grains, water, a roll-up amine compound A and a roll-off compound B.

Description

Grinding composition

[0001] The present invention relates to a composition for polishing. The present application claims priority based on Japanese Patent Application No. 2017-21539, filed on Feb. 8, 2017, and Japanese Patent Application No. 2017-68256, filed on March 30, 2017. The entire contents of the application are incorporated herein by reference.

[0002] The surface of a germanium wafer used as a constituent element of a semiconductor article or the like is generally subjected to a lapping step and a polishing step to complete a high-grade mirror surface. The polishing step described above typically includes a preliminary polishing step and a final polishing step. The technical documents concerning the polishing composition include, for example, Patent Documents 1 to 5. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Application Publication No. 2007-53298 [Patent Document 2] Japanese Patent Application Publication No. 2016-124943 [Patent Document 3] International [Patent Document 4] International Publication No. 2012/005289 [Patent Document 5] Japanese Patent Application Publication No. 2014-216464

[Problems to be Solved by the Invention] In recent years, from the viewpoint of cost reduction and the like, there is a need to reduce the amount of abrasive grains used for polishing compositions used for polishing semiconductor products such as wafers and other products. However, when the amount of abrasive grains used is reduced, there is a disadvantage that the polishing rate is greatly reduced. In this regard, Patent Document 1 discloses that the polishing composition for polishing a tantalum wafer contains a compound such as ethylenediamine to improve the polishing rate of the tantalum wafer. However, when a compound containing ethylenediamine or the like is used, although the polishing rate can be improved, the peripheral portion of the tantalum wafer, that is, the vicinity of the edge is excessively polished, so that the thickness of the peripheral portion after polishing is generated. Worry about the phenomenon of unwanted reduction (edge turn). This phenomenon is also observed when grinding is carried out with a polishing composition containing a general basic compound. As a general basic compound, potassium hydroxide is mentioned, for example. Patent Document 2 discloses that by adding a water-soluble polymer to a polishing composition, a water-soluble polymer is adsorbed on a peripheral portion of the ruthenium wafer, and edge drop can be suppressed. However, since the ruthenium wafer is protected by the adsorbed water-soluble polymer, the polishing rate is lowered. In view of the above, the present invention has been made in view of the above-mentioned object, and it is an object of the present invention to provide a polishing composition which can suppress the reduction of the abrasive content and reduce the high polishing rate and the amount of edge drop. On the other hand, in order to maximize the area of the germanium wafer, a polishing composition for a polished surface having a small difference in thickness between the vicinity of the edge and the center portion and having good flatness is required. In view of the above, the present invention has been made in view of the above-mentioned object, and it is an object of the present invention to provide a polishing composition which is capable of achieving a polishing surface having a small difference in thickness between the vicinity of the edge and the center portion and having good flatness. [Means for Solving the Problem] [0008] This specification provides a composition for polishing. The polishing composition contains abrasive grains, water, and an amine compound containing no ether bond, and the content of the abrasive grains is 2% by weight or less; and the amine compound containing no ether bond satisfies at least one of the following conditions: (1) a hydrocarbon group having 3 or more carbon atoms between two first-order amine groups in a molecule, and having no ether bond; and (2) having a first-order amine group, a 2-stage amine group, and a 3-stage amine group At least one of the amine groups, and does not have an ether bond. According to this configuration, it is possible to reduce the high polishing rate and the amount of edge drop at a higher level in the polishing composition containing the low-concentration abrasive grains. A preferred aspect of the polishing composition disclosed herein is that the content of the aforementioned amine compound having no ether bond is less than 1% by weight. In the range of such an amine bond-free amine compound, the polishing rate can be combined with the performance of reducing the amount of edge drop at a higher level. [0010] A preferred aspect of the polishing composition disclosed herein is that the content of the abrasive grains is less than 1% by weight. Such a polishing composition containing a low concentration of abrasive grains can achieve a polishing rate increase effect and an edge drop amount reduction effect at a lower cost and suitable for the first time. [0011] A preferred aspect of the polishing composition disclosed herein is the aforementioned abrasive grain cerium oxide particles. By using the cerium oxide particles as the abrasive grains, the polishing rate increasing effect and the edge turning amount reducing effect by the above-described amine compound having no ether bond can be more suitably exhibited. Or, in another preferred embodiment of the polishing composition disclosed herein, the polishing composition contains abrasive grains, water, alkane compound A, and a falling compound B. By using the combination of the amine compound A and the falling compound B in combination as described above, it is possible to realize a polished surface having a small difference in thickness between the vicinity of the edge and the center portion and having good flatness. [0013] A preferred aspect of the polishing composition disclosed herein is that the aforementioned amine compound A contains an amine compound having no ether bond, and the amine compound having no ether bond satisfies at least one of the following conditions: (1) a hydrocarbon group having 3 or more carbon atoms between two first-order amine groups in the molecule, and having no ether bond; and (2) having a first-order amine group, a 2-stage amine group, and a 3-stage amine group At least one of the amine groups, and does not have an ether bond. The ether bond-free amine compound is effective in imparting planarization to the edges. [0014] A preferred aspect of the polishing composition disclosed herein is that the descending compound B comprises at least one compound selected from the group consisting of: (B1) selected from the group consisting of ammonia, ammonium hydroxide, and hydrazine. At least one basic compound in which a hydroxide and a metal hydroxide are grouped; (B2) an amine group having at least one of a 2-stage amine group and a 3-stage amine group, and an amine compound having no amine group 1 (B3) an amine compound containing an ether bond in the molecule; and (B4) an amine compound having a hydrocarbon group having 1 or 2 carbon atoms between the two first-order amine groups in the molecule. The drop-off compound B is effective in imparting planarization to the edges. [0015] A preferred aspect of the polishing composition disclosed herein is that the ratio of the molar concentration of the above-mentioned converted amine compound A and the falling compound B (transfer amine compound A: the falling compound B) is 1: Range of 500~200:1. When the ratio of the molar concentration of the amine compound A and the drop-down compound B is within the range of the ratio of the molar concentration of the amine compound A and the falling compound B, the edge flattening effect can be more suitably exhibited. [0016] A preferred aspect of the polishing composition disclosed herein is the abrasive grain cerium oxide particles. By using the cerium oxide particles as the abrasive grains, the edge flattening effect can be more suitably exhibited. [0017] The polishing composition disclosed herein is ideally suited for use in the polishing of tantalum, such as polishing after finishing. As a suitable object to be applied, a preliminary polishing such as enamel can be exemplified.

[0018] Hereinafter, preferred embodiments of the present invention will be described. Further, what is not specifically mentioned in the present specification and which is necessary for the practice of the present invention can be understood as a design matter that can be achieved by a person having ordinary knowledge in the technical field of the present invention in the prior art according to the field of the present invention. . The present invention can be implemented in accordance with the teachings of the present specification and the technical knowledge of the field of the invention. <Amine Compound Containing No Ether Bond> The polishing composition of the first aspect provided by the present specification comprises an amine compound containing no ether bond, and the amine compound containing no ether bond satisfies the following At least one of the conditions: (1) a hydrocarbon group having 3 or more carbon atoms between two first-order amine groups in the molecule, and having no ether bond; and, (2) having a first-order amine group and a second-order amine An amine group of at least one of a group and a tertiary amine group, and having no ether bond. Thereby, in the polishing composition containing the low-concentration abrasive grains, the high polishing rate can be maintained, and the amount of edge drop can be effectively reduced at the end face after the grinding. The reason for obtaining such an effect is not specifically explained by the limitation, and is considered to be as follows, for example. In other words, since the amine compound containing no ether bond has a plurality of amine groups exhibiting a strong basicity in the polishing composition, chemical polishing of the surface of the object to be polished is promoted, and the surface is efficiently ground. Further, a hydrocarbon group having 3 or more carbon atoms (or an amine group having a first-order amine group and at least one of a 2-stage amine group and a 3-stage amine group) is provided between two first-stage amine groups in the molecule, Further, since it does not have an ether bond, the amine group having a small steric hindrance can exhibit high adsorption ability to the object to be polished. Therefore, since the amine compound is appropriately adsorbed to the outer peripheral portion of the object to be polished at the time of polishing to protect the outer peripheral portion, the outer peripheral portion is less likely to be excessively ground than the central portion. This is considered to be given to those who reduce the amount of marginal decline. [0020] As the amine compound having no ether bond as the first aspect disclosed herein, various materials having the aforementioned configurations may be used singly or in a suitable combination. For example, the above-mentioned amine compound having no ether bond may be any one of an aliphatic polyamine compound, a heterocyclic polyamine compound, and an aromatic polyamine compound having the above-described structure. In the polyamine compound, one or two or more hydrogen atoms bonded to a carbon atom constituting the main chain may be used independently of a substituent other than a hydrogen atom (for example, a hydroxyl group or a halogen group (for example, , F, Cl, Br, etc.) substituted amine compounds. The amount of the amine group in the amine compound having no ether bond (that is, the total number of the amine group of the first-stage amine group, the second-stage amine group, and the tertiary amine group) may be, for example, 2 to 10, preferably 2 to 8, preferably 2 ~6, more preferably 2~5 (for example, 2~4). In the case of the amine compound satisfying the conditions of the above (1), the number of the amine groups of the first-order amine in the compound is not particularly limited as long as it is two or more in one molecule, and is usually 2 to 10, preferably 2 to 8. Preferably, it is 2 to 6, more preferably 2 to 4 (for example, 2 or 3). Further, the number of carbon atoms of the hydrocarbon group between the two primary amino groups in the molecule is particularly limited as long as it is three or more, and is usually from 3 to 15, preferably from 3 to 12, and more preferably from 4 to 10. More preferably 4~8. Further, in the case of the amine compound satisfying the condition of the above (2), the number of the primary amine groups in the compound is not particularly limited as long as it is one or more molecules, and is usually 1 to 8, and 1 to 6 Preferably, it is preferably 1 to 4, more preferably 1 to 3 (for example, 1 or 2). Further, the total number of the second-order amine group and the third-stage amine group is not particularly limited as long as it is one or more molecules, and is, for example, 1 to 8, preferably 1 to 6, preferably 1 to 4, more preferably 1 ~3 (for example, 1 or 2). In the technique disclosed herein, an amine compound having no ether bond (hereinafter also referred to as "amine compound a") as shown in the following general formula (a) is exemplified as a particularly preferable example. (where, R ¹ , R ² Each of them is independently selected from the group consisting of a hydrogen atom, an alkyl group, a hydroxyalkyl group, and an aminoalkyl group. R ¹ , R ² They may also be combined with each other to form a ring structure. n is an integer from 1 to 15. -(CH ₂ ) _n - It can also have a branching chain. But, R ¹ , R ² When both are hydrogen atoms, n is an integer from 3 to 15. In the above amine compound a, the substituent R on the nitrogen atom constituting the amine group ¹ , R ² It may be a hydrogen atom, an alkyl group, a hydroxyalkyl group, or an aminoalkyl group. The alkyl group, the hydroxyalkyl group and the aminoalkyl group may be any of a linear chain, a branched chain and a cyclic chain. The total number of carbon atoms in the alkyl group, the hydroxyalkyl group and the aminoalkyl group may be from 1 to 15 (preferably from 1 to 12, preferably from 1 to 10, more preferably from 2 to 6). R ¹ , R ² Can be the same or different. Also, R ¹ , R ² They may also be combined with each other to form a ring structure. R ¹ , R ² Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group and the like. Good, especially ethyl is preferred. Further, the term "butyl" as used herein includes the concept of various structural isomers (n-butyl, isobutyl, sec-butyl, and tert-butyl). The same applies to other alkyl groups, hydroxyalkyl groups and aminoalkyl groups. The hydroxyalkyl group may be one having a structure in which one or two or more hydrogen atoms of the alkyl group are substituted with a hydroxyl group. R ¹ , R ² When it is a hydroxyalkyl group, a hydroxymethyl group, a hydroxyethyl group, a hydroxypropyl group, a hydroxybutyl group, etc. are mentioned, especially a hydroxyethyl group is preferable. The aminoalkyl group may be one having a structure in which one or two or more hydrogen atoms of the alkyl group are substituted with an amine group. R ¹ , R ² When it is an aminoalkyl group, for example, an aminomethyl group, an aminoethyl group, an aminopropyl group, an aminobutyl group, a methylaminoethyl group, a dimethylaminoethyl group, a 2-( 2-Aminoethylamino)ethyl and the like are particularly preferably 2-(2-aminoethylamino)ethyl. Further, in the above amine compound a, n represents (CH) ₂ The number of repetitions. n is an integer of 1 to 15, preferably 1 to 10, preferably 1 to 8, more preferably 1 to 6 (e.g., 1 to 4, typically 2 or 3). But, R ¹ , R ² When both of them are hydrogen atoms, n is an integer of 3 to 15, preferably 3 to 10, preferably 4 to 8, more preferably 6 to 8. [0023] As a suitable example of the above amine compound a, for example, R ¹ , R ² Both of them are hydrogen atoms. For example, R ¹ , R ² Both of them are hydrogen atoms, and (CH ₂ The amine compound a1 having a repeating number n of 3 to 10 is preferred. Specific examples of such an amine compound a1 include, for example, trimethylenediamine, tetramethylenediamine, pentamethylenediamine, hexamethylenediamine, heptamethylenediamine, and arya. Methyl diamine, nonamethylene diamine, and the like. Among them, tetramethylene diamine, pentamethylene diamine, and hexamethylene diamine are preferred, and hexamethylene diamine is particularly preferred. [0024] As another suitable example of the above amine compound a, for example, R ¹ , R ² Mutual differences. For example, with R ¹ , R ² One of them is a hydrogen atom, and the other is an alkyl group having 1 to 4 carbon atoms (preferably 1 to 3, typically 1 or 2), and (CH) ₂ The amine compound a2 having a repeating number n of 2 to 6 is preferred. Specific examples of such an amine compound a2 include N-methylethylenediamine, N-ethylethylenediamine, N-propylethylenediamine, N-methyltrimethylenediamine, and N- Ethyltrimethylenediamine, N-methyltetramethylenediamine, N-ethyltetramethylenediamine, N-methylpentamethylenediamine, N-ethylpentamethylenediamine Amine, N-methylhexamethylenediamine, N-ethylhexamethylenediamine, and the like. Among them, N-methylethylenediamine, N-ethylethylenediamine, N-propylethylenediamine, N-methyltrimethylenediamine are preferred, especially N-ethylethylenediamine. good. [0025] As another example of the above amine compound a, for example, R ¹ , R ² Both of them are alkyl groups having 1 to 4 carbon atoms (preferably 1 to 3, typically 1 or 2), and (CH) ₂ The repeating number n is an amine compound a3 of 2-6. Specific examples of such an amine compound a3 include, for example, N,N-dimethylethylenediamine, N,N-diethylethylenediamine, N,N-ethylmethylethylenediamine, N,N. -dipropylethylenediamine, N,N-dimethyltrimethylenediamine, N,N-diethyltrimethylenediamine, N,N-dimethyltetramethylenediamine, N, N-diethyltetramethylenediamine and the like. Other suitable examples of the above amine compound a include, for example, R ¹ , R ² One of them is a hydrogen atom or an alkyl group, and the other is a hydroxyalkyl group having 1 to 4 carbon atoms (preferably 1 to 3, typically 1 or 2), and (CH) ₂ The repeating number n is an amine compound a4 of 2-6. Specific examples of such an amine compound a4 include 2-(aminomethylamino)ethanol, 2-(2-aminoethylamino)ethanol, and 2-[aminomethyl(methyl) group. Amino]ethanol, 2-(aminomethylamino)propanol, 2-(2-aminoethylamino)propanol, 2-[aminomethyl(methyl)amino]propanol, 2-(Aminomethylamino)butanol, 2-(2-aminoethylamino)butanol, 2-[aminomethyl(methyl)amino]butanol, and the like. Among them, 2-(aminomethylamino)ethanol, 2-(2-aminoethylamino)ethanol, 2-[aminomethyl(methyl)amino]ethanol is preferred, especially 2-(2-Aminoethylamino)ethanol is preferred. [0027] As another suitable example of the above amine compound a, for example, R ¹ , R ² One of them is a hydrogen atom or an alkyl group, and the other is an aminoalkyl group having 1 to 6 carbon atoms (preferably 1 to 4), and (CH) ₂ The repeating number n is an amine compound a5 of 2-6. Specific examples of such an amine compound a5 include, for example, diethylenetriamine, triethylenetetramine, tetraethylpentamine, heptaethylamine, hexamethylamine, and bis(2-aminoethyl) Amine, ginseng (3-aminopropyl)amine, and the like. Among them, triamethylenetetramine, tetraethylpentamine, and heptaethylamine are preferred, and triamethylenetetramine is preferred. [0028] As another suitable example of the above amine compound a, for example, R ¹ , R ² Combine with each other to form a ring structure, and, (CH ₂ The repeating number n is an amine compound a6 of 2-6. Specific examples of such an amine compound a6 include N-aminomethylpiperazine, N-(2-aminoethyl)piperazine, and N-(2-amino-1-methylethyl). Piperazine, N-aminopropylpiperazine, N-aminobutylpiperazine, N-aminohexylpiperazine, N-aminooctylpiperazine, N-(4-amino-2,2- Dimethylbutyl)piperazine, 1,4-bis(2-aminoethyl)piperazine, 1,4-bis(3-aminopropyl)piperazine, N-(2-aminoethyl) Piperazine and the like. Among them, N-(2-aminoethyl)piperazine is preferred. The content of the amine compound having no ether bond in the polishing composition is usually suitably 0.01% by weight or more. From the viewpoint of the polishing rate, the content is preferably 0.05% by weight or more, and more preferably 0.1% by weight or more (e.g., 0.15% by weight or more). Further, the content of the above-mentioned amine compound containing no ether bond is usually less than 1% by weight, and is preferably 0.9% by weight or less, from the viewpoint of reducing the polishing rate and the edge-reduction to a high degree, and is preferably made to have a weight of 0.8% by weight. % or less (for example, 0.7% by weight or less, or 0.6% by weight or less) is preferable. [0030] The polishing composition of the second aspect provided by the present specification comprises a mixture of an amine compound A and a falling compound B. Here, the amine compound A is referred to as a compound which exhibits an action of turning on the edge of the edge of the abrasive which is thicker than the central portion by adding to the polishing composition. Further, the compound B is a compound which exhibits an action of reducing the edge of the edge of the polishing material to the edge which becomes thinner than the central portion by being added to the polishing composition. In the technique disclosed herein, by using the combined amine compound A and the falling compound B having such opposite effects, it is possible to achieve a good flatness with a small difference in thickness between the edge of the abrasive and the central portion after polishing. The surface after grinding. The ratio of the molar concentration of the amine compound A and the drop-down compound B is transferred from the viewpoint of more effective use and the effect of transferring the amine compound A and the falling compound B (turning off the amine compound A: the falling compound) B) is preferably in the range of 1:500 to 200:1. By using the combination of the amine compound A and the falling compound B in a specific molar concentration ratio, the edge flattening effect can be more suitably exhibited. The technique disclosed herein is capable of converting the molar concentration of the amine compound A and the falling compound B to 1:100 to 100:1, preferably 1:50 to 50:1, preferably 1:30. ~30:1, better ideal for 1:20~20:1. <Transfer of the amine compound A> As described previously, the amine compound A is turned on as a compound which exhibits an effect of generating edge rotation by being added to the polishing composition. In the present invention, the amine compound A was subjected to a standard polishing test in which a polishing composition having a concentration of 0.5% by mass of cerium oxide abrasive particles adjusted to a pH of 11.0 in which the compound A was dissolved in water was used. Then, a relatively flat region from the peripheral end of the silicon wafer toward the center of 2.0 mm to 4.0 mm is used as a reference point, and the difference between the wafer shape displacement amount from the peripheral end to the 0.5 mm position and the above reference point is Calculated the amount of decline X _A To display a positive value (ie X _A >0). The above amount of decline X _A It is preferably 10 nm or more, more preferably 30 nm or more, still more preferably 50 nm or more. Turndown X _A For example, it may be 70 nm or more, and typically 100 nm or more, and may be 150 nm or more. Again, the amount of decline X _A From the viewpoint of easiness of adjustment from the compounding ratio with the falling compound B, for example, it may be 500 nm or less, or typically 400 nm or less, or 300 nm or less. [Standard polishing test conditions] Grinding device: Table grinding machine manufactured by Engis, Japan, type "EJ-380IN" Polishing pad: manufactured by Nitta Hass Co., Ltd., trade name "MH S-15A" Grinding pressure: 16.8 kPa Number of rotations: 50 rotation / grinding head rotation number: 40 rotation / minute grinding wear: 8μm slurry supply rate: 100mL / min (using direct discharge) temperature of the slurry: 25 ° C [0033] as a transfer of amine compound A, as long as The amine compound which can be produced by the addition of the polishing composition to the above-mentioned edge rotation is not particularly limited. For example, it is preferred to switch the amine compound A to an amine compound having at least one or more primary amine groups. The number of the amine groups of the amine compound A is, for example, 1 to 10, preferably 1 to 8, more preferably 1 to 6, more preferably 1 to 4. For example, the amine compound A may be an amine compound having no ether bond which satisfies at least one of the following conditions: (1) a hydrocarbon group having 3 or more carbon atoms between two first-stage amine groups in the molecule; Further, it does not have an ether bond; and (2) has at least one of a primary amine group, a secondary amine group, and a tertiary amine group, and does not have an ether bond. The above-mentioned amine compound containing no ether bond has at least one of a hydrocarbon group having 3 or more carbon atoms (or a primary amine group, and a secondary amine group and a tertiary amine group) between two first-order amine groups in the molecule. In addition, since it does not have an ether bond, the primary amine group having a high water repellency and a small steric hindrance can exhibit a high adsorption capacity for the object to be polished. Therefore, since the amine compound is appropriately adsorbed to the peripheral portion of the object to be polished at the time of polishing to achieve the protection of the peripheral portion, the peripheral portion is less likely to be excessively ground than the central portion. This is thought to be given to the turner near the edge. The amine compound having no ether bond as the second aspect disclosed herein is the same as the amine compound having no ether bond in the first aspect, and the detailed description thereof will be omitted. <Downdown Compound B> As described previously, the drop-off compound B exhibits a compound which produces an edge-falling effect by being added to the polishing composition. In the present invention, the compound B is a polishing composition which is prepared by dissolving the compound B in water and adjusting the concentration of the cerium oxide abrasive grain having a pH of 11.0 to 0.5% by mass, and polishing the wafer by the standard polishing conditions. After the polishing test, a relatively flat region from the peripheral end of the silicon wafer toward the center of 2.0 mm to 4.0 mm is used as a reference point, and the difference between the wafer shape displacement amount from the peripheral end to the 0.5 mm position and the above reference point Calculated amount of decline X _B To display a negative value (ie X _B <0). The above amount of decline X _B It is preferably -10 nm or less, more preferably -50 nm or less, still more preferably -100 nm or less. Again, the amount of decline X _B From the viewpoint of easiness of adjustment from the mixing ratio of the amine compound A and the like, it may be, for example, -1000 nm or more, typically -300 nm or more, -200 nm or more, or -150 nm or more, particularly It is preferably -120 nm or more. (Basic Compound B1) The compound B is not particularly limited as long as it is a compound capable of generating the above-described edge transition by being added to the polishing composition. For example, the falling compound B may be selected from at least one basic compound B1 in which a mixture of ammonia, ammonium hydroxide, hydrazine hydroxide, and metal hydroxide is present. The basic compound referred to herein means a basic compound which generates hydroxide ions after being dissolved in water, and has a function of increasing the pH of the composition by adding it to the polishing composition. Such a basic compound B1 may be an organic basic compound or an inorganic basic compound. The basic compound B1 may be used alone or in combination of two or more. [0038] Examples of the organic basic compound include a fourth-order ammonium hydroxide such as tetraalkylammonium hydroxide. For example, a fourth-order ammonium hydroxide such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide or tetrabutylammonium hydroxide can be preferably used. Among them, tetramethylammonium hydroxide and tetraethylammonium hydroxide are preferred. As another example of the organic basic compound, a hydroxide of the fourth grade ruthenium may be mentioned. For example, tetramethylhydrazine hydroxide, tetraethylhydrazine hydroxide, tetrapropylphosphonium hydroxide or tetrabutylphosphonium hydroxide can be suitably used. [0039] Examples of the inorganic basic compound include hydroxides such as ammonia; ammonia, an alkali metal or an alkaline earth metal. Specific examples of the hydroxide include potassium hydroxide, sodium hydroxide and the like. [0040] Examples of the preferable basic compound B1 include potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, and tetraethylammonium hydroxide. Among them, as a suitable one, potassium hydroxide, tetramethylammonium hydroxide, and tetraethylammonium hydroxide can be exemplified. Preferred examples thereof include potassium hydroxide and tetramethylammonium hydroxide. (Amine Compound B2) As another suitable example of the drop-down compound B disclosed herein, an amine compound having a 2-stage amine group and/or a 3-stage amine group and having no amine group 1 may be mentioned. B2. The amine compound B2 is preferably an amine compound having at least one tertiary amino group. The total number of the quaternary amine groups and the ternary amine groups in the amine compound B2 is, for example, 1 to 12, preferably 1 to 10, more preferably 1 to 8, more preferably 1 to 4. An example of the amine compound B2 which is particularly preferred in the technique disclosed herein is an amine compound b2 represented by the following general formula (b2). (where, R ³ , R ⁴ , R ⁵ Each is independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 15 carbon atoms, and an aminoalkyl group having no amine group of 1 degree. But, R ³ , R ⁴ , R ⁵ At least two of them are groups other than a hydrogen atom. R ³ , R ⁴ , R ⁵ It can also have double keys between CC or CN. Also, R ³ , R ⁵ They may also be combined with each other to form a ring structure. In the above amine compound b2, the substituent R on the nitrogen atom constituting the amine group ³ , R ⁴ , R ⁵ It may be a hydrogen atom, an alkyl group, and an aminoalkyl group having no amine group of the first order. The alkyl group and the aminoalkyl group may be any of a linear chain, a branched chain, and a cyclic chain. The total number of carbon atoms in the alkyl group and the aminoalkyl group may be from 1 to 15 (preferably from 1 to 12, preferably from 1 to 10, more preferably from 2 to 6). R ³ , R ⁴ , R ⁵ Can be the same or different. R ³ , R ⁴ , R ⁵ In the case of an alkyl group, for example, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group and the like can be mentioned, wherein a methyl group, an ethyl group, a propyl group But butyl is preferred, especially ethyl is preferred. The above alkyl group may have a double bond between CCs. R ³ , R ⁴ , R ⁵ In the case of an aminoalkyl group, for example, methylaminomethyl, dimethylaminomethyl, methylaminoethyl, dimethylaminoethyl, ethylaminomethyl, and Ethylaminomethyl and the like. The above aminoalkyl group may have a double bond between CN or CC. [0044] As a suitable example of the above amine compound b2, for example, R ³ , R ⁴ , R ⁵ All are alkyl. For example, to R ³ , R ⁴ , R ⁵ All of the alkyl groups having a carbon number of 1 to 8 (preferably 1 to 3, typically 1 or 2) are preferred. Specific examples of such an amine compound b2 include, for example, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, trihexylamine, triheptylamine, and trioctyl group. Amine, tricyclohexylamine, N,N-dimethylethylamine, N,N-diethylmethylamine, N,N-dimethylbutylamine, N,N-diethylbutylamine , N,N-Dimethylpentylamine, N,N-diethylpentylamine, N,N-dimethylhexylamine, N,N-diethylhexylamine, N,N-dimethyl Cyclohexylamine, N,N-diethylcyclohexylamine, N,N-diisopropylethylamine, and the like. Among them, trimethylamine, triethylamine, and tripropylamine are preferred, and triethylamine is particularly preferred. [0045] As another example of the above amine compound b2, for example, R ³ , R ⁵ Is an alkyl group having 1 to 8 carbon atoms (preferably 1 to 3, typically 1 or 2), and R ⁴ For the hydrogen atom. Specific examples of such an amine compound b2 include dimethylamine, diethylamine, dipropylamine, dibutylamine, dipentylamine, dihexylamine, diheptylamine, and dioctyl. Amine, dicyclohexylamine, N-ethylmethylamine, N-methylpropylamine, N-ethylpropylamine, N-butylmethylamine, N-butylethylamine, N-methylpentyl Alkylamine, N-ethylpentylamine, N-hexylmethylamine, N-ethylhexylamine, and the like. [0046] As another example of the above amine compound b2, for example, R ³ Is an alkyl group having 1 to 8 carbon atoms (preferably 1 to 3, typically 1 or 2), R ⁴ Is a hydrogen atom or an alkyl group having 1 to 8 carbon atoms (preferably 1 to 3, typically 1 or 2), and R ⁵ It is an aminoalkyl group having 1 to 6 carbon atoms (preferably 1 to 3, typically 1 or 2). Specific examples of such an amine compound b2 include, for example, N,N'-dimethylethylenediamine, trimethylethylenediamine, tetramethylethylenediamine, and N,N'-diethylethylenediamine. , triethylethylenediamine, tetraethylethylenediamine, N-ethyl-N'-methylethylenediamine, N,N-dimethyl-N'-ethylethylenediamine, N,N- Diethyl-N'-methylethylenediamine, N,N-diethyl-N'N'-dimethylethylenediamine, N,N'-dimethyltrimethylenediamine, trimethyl Trimethylenediamine, tetramethyltrimethylenediamine, N,N'-diethyltrimethylenediamine, triethyltrimethylenediamine, tetraethyltrimethylenediamine, N-B Base-N'-methyltrimethylenediamine and the like. [0047] As another example of the above amine compound b2, for example, R ³ , R ⁵ An alkyl or aminoalkyl group having 1 to 6 carbon atoms (preferably 1 to 3, typically 1 or 2), and R ³ , R ⁵ A nitrogen-containing heterocyclic compound having a cyclic structure formed by bonding to each other. Specific examples of such an amine compound b2 include, for example, imidazole, 1-methylimidazole, 4-methylimidazole, 1,2-dimethylimidazole, 2,4-dimethylimidazole, and 1-ethylimidazole. , 4-ethylimidazole, 1,2-diethylimidazole, 2-ethyl-4-methylimidazole, 1-propylimidazole, 4-propylimidazole, 1-butylimidazole, 4-butylimidazole , pyrazole, imidazoline, piperazine, 1-methylpiperazine, 2-methylpiperazine, 1-ethylpiperazine, 2-ethylpiperazine, 1-ethyl-4-methylpiperazine, 1-(2-Dimethylaminoethyl)piperazine, 1-(2-dimethylaminoethyl)-4-methylpiperazine, 1-propylpiperazine, 2-propylpiperazine , 1-butylpiperazine, 4-butylpiperazine, and the like. Among them, imidazole, 1-methylimidazole, 4-methylimidazole, 1-ethylimidazole, 4-ethylimidazole are preferred, and imidazole is particularly preferred. (Amine Compound B3) As another suitable example of the drop-down compound B disclosed herein, an amine compound B3 containing an ether bond in the molecule may be mentioned. The number of the amine groups in the amine compound B3 is not particularly limited, and those having at least one primary amino group are preferred. The total number of amine groups in the amine compound B3 may be, for example, 1 to 12, and may typically be 1 to 10. The total number of amine groups in the amine compound B3 may be, for example, from 1 to 8, and may typically be from 1 to 4. The number of ether bonds in the amine compound B3 is, for example, 1 to 10, and typically 1 to 8. The number of ether bonds in the amine compound B3 may be, for example, 1 to 6, and may typically be 1 to 4. An example of the amine compound B3 which is particularly preferred in the technique disclosed herein is an amine compound b3 represented by the following general formula (b3). (where, R ⁶ , R ⁷ Each of them is independently selected from the group consisting of a hydrogen atom, an alkyl group, an alkyl group having an ether bond, and an aminoalkyl group. R ⁶ , R ⁷ They may also be combined with each other to form a ring structure. n is an integer from 1 to 15. (CH ₂ ) _n It may also have a branching chain. R ⁸ It is a group selected from the group consisting of an alkyl group, an alkyl group having an ether bond, an aminoalkyl group, an amino group having an ether bond, and an amine group. [0050] In the above amine compound b3, a substituent R on a nitrogen atom constituting an amine group ⁶ , R ⁷ It may be a hydrogen atom, an alkyl group, an alkyl group having an ether bond or an aminoalkyl group. The alkyl group, the alkyl group having an ether bond, and the aminoalkyl group may be any of a linear chain, a branched chain, and a cyclic group. The total number of carbon atoms in the alkyl group, the alkyl group having an ether bond, and the aminoalkyl group may be from 1 to 15 (preferably from 1 to 12, preferably from 1 to 10, more preferably from 2 to 6). R ⁶ , R ⁷ Can be the same or different. Also, R ⁶ , R ⁷ They may also be combined with each other to form a ring structure. R ⁶ , R ⁷ Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group and the like. An alkyl group having an ether bond means an alkyl group having at least one ether bond. R ⁶ , R ⁷ When it is an alkyl group which has an ether bond, a methoxymethyl group, a methoxyethyl group, 2-methoxyethoxymethyl group, etc. are mentioned, for example. R ⁶ , R ⁷ When it is an aminoalkyl group, for example, an aminomethyl group, an aminoethyl group, an aminopropyl group, an aminobutyl group, a methylaminoethyl group, a dimethylaminoethyl group, a 2-( 2-Aminoethylamino)ethyl and the like. Further, in the above amine compound b3, n represents (CH) ₂ The number of repetitions. n is an integer of 1 to 15, preferably 1 to 10, preferably 1 to 8, more preferably 1 to 6 (e.g., 1 to 4, typically 2 or 3). (CH ₂ ) _n It may also have a branching chain. R ⁸ It may be an alkyl group, an alkyl group having an ether bond, an aminoalkyl group, an aminoalkyl group having an ether bond, or an amine group. The alkyl group, the alkyl group having an ether bond, the aminoalkyl group, and the aminoalkyl group having an ether bond may be any of a linear chain, a branched chain, and a cyclic group. The total number of carbon atoms in the alkyl group, the alkyl group having an ether bond, the aminoalkyl group and the amino group having an ether bond may be from 1 to 10 (preferably from 1 to 6, preferably from 1 to 4, more preferably Good for 1~3). The aminoalkyl group having an ether bond means an aminoalkyl group having at least one ether bond. R ⁸ When it is an aminoalkyl group having an ether bond, for example, 2-aminoethoxyethyl, 2-aminopropoxyethyl, 3-aminoethoxypropyl, 3-amino group is mentioned. Propoxypropyl and the like. [0051] As a suitable example of the above amine compound b3, for example, R ⁶ , R ⁷ Both of them are hydrogen atoms. For example, to R ⁶ , R ⁷ Both of them are hydrogen atoms, (CH ₂ The repetition number n is 1~6 (1~4 is preferred, typically 1~3), and R ⁸ It is preferably an aminoalkyl group or an amino group having an ether bond. Specific examples of such an amine compound b3 include bis(aminomethyl)ether, bis(2-aminoethyl)ether, bis(3-aminopropyl)ether, and ethylene glycol bis (2). -Aminoethyl)ether, ethylene glycol bis(3-aminopropyl)ether, 1,3-propanediol bis(2-aminoethyl)ether, 1,3-propanediol bis(3-aminopropyl) Ether, 1,4-butanediol bis(2-aminoethyl)ether, 1,4-butanediol bis(3-aminopropyl)ether, 1,5-pentanediol bis (2) -aminoethyl)ether, 1,5-pentanediol bis(3-aminopropyl)ether, diethylene glycol bis(3-aminopropyl)ether, 1,11-diamino-3 6,6-trioxadecane, and the like. Among them, 1,4-butanediol bis(3-aminopropyl)ether is preferred. [0052] As another example of the above amine compound b3, for example, R ⁶ , R ⁷ Both of them are alkyl groups having 1 to 4 carbon atoms, (CH ₂ The repetition number n is 1~6 (1~4 is preferred, typically 1~3), and R ⁸ It is preferably an aminoalkyl group or an amino group having an ether bond. Specific examples of such an amine compound b3 include, for example, bis(dimethylaminomethyl)ether, bis(2-dimethylaminoethyl)ether, and bis(3-dimethylaminopropyl). Ether, ethylene glycol bis(2-dimethylaminoethyl)ether, ethylene glycol bis(3-dimethylaminopropyl)ether, 1,3-propanediol bis(2-dimethylamine) Ethyl ethyl ether, 1,3-propanediol bis(3-dimethylaminopropyl) ether, 1,4-butanediol bis(2-dimethylaminoethyl) ether, 1,4- Butylene glycol bis(3-dimethylaminopropyl)ether, bis(diethylaminomethyl)ether, bis(2-diethylaminoethyl)ether, and the like. [0053] As another example of the above amine compound b3, R ⁶ , R ⁷ Both of them are hydrogen atoms, (CH ₂ The repetition number n is 1~6 (1~4 is preferred, typically 1~3), and R ⁸ It is an alkyl group having 1 to 6 carbon atoms (preferably 1 to 4, typically 1 to 3). Specific examples of such an amine compound b3 include, for example, 2-methoxyethylamine, 2-ethoxyethylamine, 2-propoxyethylamine, 2-butoxyethylamine, and 2 -pentyloxyethylamine, 3-methoxypropylamine, 3-ethoxypropylamine, 3-propoxypropylamine, 3-butoxypropylamine, 3-pentoxypropane Alkylamine and the like. [0054] As another example of the above amine compound b3, for example, R ⁶ , R ⁷ Mutual differences. For example, to R ⁶ , R ⁷ One of them is a hydrogen atom, and the other is an alkyl group having 1 to 4 carbon atoms, and R ⁸ It is preferably an aminoalkyl group or an amino group having an ether bond. Specific examples of such an amine compound b3 include bis(methylaminomethyl)ether, bis(2-methylaminoethyl)ether, and bis(3-methylaminopropyl)ether. Ethylene glycol bis(2-methylaminoethyl)ether, ethylene glycol bis(3-methylaminopropyl)ether, 1,3-propanediol bis(2-methylaminoethyl)ether, 1,3-propanediol bis(3-methylaminopropyl)ether, 1,4-butanediol bis(2-methylaminoethyl)ether, 1,4-butanediol bis(3-甲甲Aminopropyl)ether, bis(ethylaminomethyl)ether, bis(2-ethylaminoethyl)ether, and the like. [0055] As another example of the above amine compound b3, R ⁶ , R ⁷ One of them is a hydrogen atom, and the other is an alkyl group having 1 to 4 carbon atoms, (CH ₂ The repetition number n is 1~6 (1~4 is preferred, typically 1~3), and R ⁸ It is an alkyl group having 1 to 6 carbon atoms (preferably 1 to 4, typically 1 to 3). Specific examples of such an amine compound b3 include, for example, N-methyl-2-methoxyethylamine, N-methyl-2-ethoxyethylamine, and N-methyl-2-propoxy Ethylethylamine, N-methyl-2-butoxyethylamine, N-methyl-2-pentyloxyethylamine, N-methyl-2-hexyloxyethylamine, N-A Benzyl-heptyloxyethylamine, N-methyl-2-octyloxyethylamine, N-methyl-3-ethoxypropylamine, N-methyl-3-propoxypropane Amine, N-methyl-3-butoxypropylamine, N-methyl-3-pentyloxypropylamine, N-methyl-3-hexyloxypropylamine, N-methyl- 3-heptyloxypropylamine and the like. (Amine Compound B4) As another suitable example of the drop-down compound B disclosed herein, an amine compound B4 having a hydrocarbon group having 1 or 2 carbon atoms between two primary amino groups in the molecule can be mentioned. Specific examples of such an amine compound B4 include, for example, methylene diamine, ethylene diamine, 1-methylethylenediamine, 1-ethylethylenediamine, 1-propylethylenediamine, 1,1. - dimethylethylenediamine, 1,1-diethylethylenediamine, 1,2-dimethylethylenediamine, 1-ethyl-1-methylethylenediamine, 1-ethyl-2- Methyl ethylenediamine and the like. Among them, ethylenediamine is preferred. The appropriate ratio of the molar concentration of the amine compound A to the falling compound B can be different depending on the kind of the amine compound A to be transferred, the type of the compound B to be transferred, the combination, and the like. The concentration ratios set forth below are merely illustrative and are not intended to limit the concentration ratios. When the amine compound a2 is used as the amine compound A, the ratio of the molar concentration of the amine compound a2 to the drop-down compound B (amine compound a2: drop-off compound B) is preferably 1:10 to 100:1. The above molar concentration is preferably from 1:5 to 50:1, more preferably from 1:1 to 10:1. When the amine compound a4 is used as the amine compound A, the ratio of the molar concentration of the amine compound a4 to the falling compound B (amine compound a4: the falling compound B) is preferably 1:10 to 200:1. The above molar concentration value is preferably from 1:5 to 100:1, more preferably from 1:1 to 50:1. When the amine compound a5 is used as the amine compound A, the ratio of the molar concentration of the amine compound a5 to the falling compound B (amine compound a5: the falling compound B) is preferably 1:500 to 5:1. The above molar concentration is preferably from 1:50 to 2:1, more preferably from 1:25 to 1:2. When the amine compound a6 is used as the amine compound A, the ratio of the molar concentration of the amine compound a6 to the falling compound B (amine compound a6: the falling compound B) is preferably 1:10 to 100:1. The above molar concentration is preferably from 1:5 to 50:1, more preferably from 1:2 to 25:1. <Water> The polishing composition disclosed herein typically contains water in addition to the above-described amine compound having no ether bond. As water, it is convenient to use ion-exchanged water (deionized water), pure water, ultrapure water, distilled water, and the like. The water to be used is preferably such that the total content of the transition metal ions is 100 ppb or less in order to avoid the action of the other components contained in the polishing composition. For example, the purity of water can be improved by using an ion exchange resin to remove impurity ions, using a filter to remove foreign matter, distillation, or the like. The polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) which can be uniformly mixed with water as necessary. Usually, 90% by volume or more of the solvent contained in the polishing composition is preferably water, and 95% by volume or more (typically 99 to 100% by volume) is preferably water. <Abrasive Grains> The polishing composition disclosed herein contains an amine compound containing no ether bond and water, and further contains abrasive grains. In the technique disclosed herein, the material or the shape of the abrasive grains is not particularly limited, and may be appropriately selected depending on the purpose of use or the state of use of the polishing composition. Examples of the abrasive grains include inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include cerium oxide particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium oxide particles, zirconia particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, and iron oxide. Oxide particles such as red (Bengala) particles; nitride particles such as tantalum nitride particles and boron nitride particles; carbide particles such as tantalum carbide particles and boron carbide particles; diamond particles; carbonic acid such as calcium carbonate or barium carbonate Salt and so on. Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles or poly(meth)acrylic particles (here, (meth)acrylic means to include acrylic acid and methacrylic acid), and polypropylene. Nitrile particles, etc. One type of the abrasive grains may be used alone or two or more types may be used in combination. [0060] As the abrasive grains, inorganic particles are preferred, and particles composed of an oxide of a metal or a semimetal are also preferred. As a suitable example of the abrasive grains which can be used in the technique disclosed herein, for example, cerium oxide particles can be mentioned. For example, when the technique disclosed herein is applied to a polishing composition which can be used for polishing a silicon wafer, it is particularly preferable to use the cerium oxide particles. The reason is that when the object to be polished is a germanium wafer, if the cerium oxide particles composed of the same element and the oxygen atom as the object to be polished are used as the abrasive grains, the metal or the half which is different from the bismuth does not occur after the polishing. The residue of the metal does not cause any contamination of the surface of the wafer or the deterioration of electrical properties of the wafer due to diffusion of a metal or a semimetal which is different from that of the inside of the object to be polished. Moreover, since the hardness of germanium and germanium dioxide is similar, the polishing process can be performed without causing excessive damage to the surface of the germanium wafer. From this point of view, as one form of the composition for a suitable polishing, a polishing composition containing only cerium oxide particles as abrasive grains can be exemplified. Further, cerium oxide has a property of being easily obtained in high purity. This is also the reason why it is preferable to use cerium oxide particles as the abrasive grains. Specific examples of the cerium oxide particles include colloidal cerium oxide, gas phase cerium oxide, and precipitated cerium oxide. From the viewpoint of not easily scratching the surface of the object to be polished and achieving a surface having a lower haze, examples of the suitable cerium oxide particles include colloidal cerium oxide and gas phase cerium oxide. Among them, colloidal cerium oxide is preferred. For example, as the abrasive grains of the polishing composition used for the polishing of the tantalum wafer (at least one of the preliminary polishing and the final polishing, preferably for preliminary polishing), colloidal cerium oxide can be suitably used. The true specific gravity of the cerium oxide constituting the cerium oxide particles is preferably 1.5 or more, more preferably 1.6 or more, still more preferably 1.7 or more. By increasing the true specific gravity of cerium oxide, the polishing rate can be increased (the amount of the surface of the object to be polished is removed per unit time) when the silicon wafer is polished. From the viewpoint of reducing the scratch on the surface of the object to be polished (the surface to be polished), it is preferable to use cerium oxide particles having a true specific gravity of 2.2 or less. As the true specific gravity of the cerium oxide, a measurement obtained by a liquid substitution method using ethanol as a substitution liquid can be employed. [0062] In the technique disclosed herein, the abrasive grains contained in the polishing composition may be in the form of primary particles, or may be in the form of secondary particles in which a plurality of primary particles are combined. Further, it is also possible to mix abrasive grains in the form of primary particles in the form of primary particles and secondary particles. In one aspect, at least a part of the abrasive grains are contained in the polishing composition in the form of secondary particles. [0063] The uniform particle diameter D of the abrasive particles _P1 It is not particularly limited, and is preferably 5 nm or more, more preferably 10 nm or more, and particularly preferably 20 nm or more from the viewpoint of polishing rate and the like. From the viewpoint of achieving a higher grinding effect, the flat uniform particle diameter D _P1 It is preferably 25 nm or more, more preferably 30 nm or more. Flat uniform particle diameter D can also be used _P1 Abrasive particles above 40 nm. Further, from the viewpoint of preserving stability (for example, dispersion stability), the uniform particle diameter of the abrasive grains is preferably 100 nm or less, more preferably 80 nm or less, still more preferably 70 nm or less, for example, 60 nm or less. Moreover, in the technique disclosed herein, the uniform uniform particle diameter D of the abrasive grains _P1 Can be, for example, from the specific surface area (BET value) measured by the BET method, according to D _P1 (nm)=6000/(true density (g/cm ³ ) × BET value (m ² /g)) to calculate. For example, in the case of cerium oxide particles, according to D _P1 (nm) = 2727 / BET value (nm) is calculated. The measurement of the specific surface area can be carried out, for example, using a surface area measuring device manufactured by Micromeritex Co., Ltd. under the trade name "Flow Sorb II 2300". [0064] Average secondary particle diameter D of abrasive grains _P2 It is not particularly limited, and is preferably 15 nm or more, and preferably 25 nm or more from the viewpoint of polishing rate and the like. From the viewpoint of achieving a higher grinding effect, the average secondary particle diameter D _P2 It is preferably 40 nm or more, and more preferably 50 nm or more. Moreover, from the viewpoint of preserving stability (for example, dispersion stability), the average secondary particle diameter D of the abrasive grains _P2 Suitably, it is 200 nm or less, preferably 150 nm or less, and preferably 100 nm or less. Average secondary particle diameter D of abrasive grains _P2 It can be measured by a dynamic light scattering method of the type "UPA-UT151" manufactured by Nikkiso Co., Ltd., for example. [0065] Average secondary particle diameter D of abrasive grains _P2 Generally speaking, the uniform secondary particle diameter D of the abrasive particles _P1 For equal or above (D _P2 /D _P1 ≧1), typically greater than D _P1 (D _P2 /D _P1 >1). It is not subject to special restrictions, from the viewpoint of grinding effect and surface smoothness after grinding, D of abrasive grains _P2 /D _P1 Usually, it is suitably in the range of 1.05 to 3, preferably in the range of 1.1 to 2.5, and preferably in the range of 1.2 to 2.3 (for example, more than 1.3 but less than 2.2). [0066] The shape (outer shape) of the abrasive grains may be spherical or non-spherical. Specific examples of the non-spherical abrasive grains include, for example, a peanut shape (i.e., a shape of a peanut shell), a 茧 shape, a gold sugar shape, a football shape, and the like. The average value (average aspect ratio) of the major axis/short diameter ratio of the primary particles of the abrasive grains is preferably 1.05 or more, and more preferably 1.1 or more. Higher grinding rates can be achieved by increasing the average aspect ratio of the abrasive particles. Further, the average aspect ratio of the abrasive grains is preferably 3.0 or less, more preferably 2.0 or less, and still more preferably 1.5 or less from the viewpoint of reducing scratches and the like. The shape (outer shape) or the average aspect ratio of the abrasive grains can be obtained, for example, by observation with an electron microscope. As a specific operation procedure for obtaining the average aspect ratio, for example, a scanning electron microscope (SEM) is used, and a predetermined number (for example, 200) of abrasive particles capable of confirming the shape of the individual particles is drawn to be externally attached to each particle image. The smallest rectangle. Then, the rectangle drawn by each particle image is calculated as the length/length to diameter ratio (length to width ratio) by dividing the length of the long side (the value of the long diameter) by the length of the short side (the value of the short diameter). ). The average aspect ratio can be obtained by arithmetically averaging the aspect ratio of the predetermined number of particles. The content of the abrasive grains in the polishing composition is usually 0.01% by weight or more, preferably 0.05% by weight or more, more preferably 0.1% by weight or more, and still more preferably 0.15% by weight or more. Higher grinding rates can be achieved by increasing the amount of abrasive particles. Moreover, from the viewpoint of dispersion stability and cost reduction of the polishing composition, the content is usually preferably 2% by weight or less, preferably 1.5% by weight or less, preferably 1% by weight or less, and more preferably less than 1%. The weight % is particularly preferably 0.5% by weight or less. <Other Components> The polishing composition disclosed herein may further contain a water-soluble polymer, a surfactant, a buffer, a chelate, or an organic acid as necessary within a range that does not significantly impair the effects of the present invention. A known additive which can be used for a polishing composition such as an organic acid salt, an inorganic acid, an inorganic acid salt, a preservative, or an antifungal agent (typically a polishing composition used in a polishing step of a tantalum wafer). As an example of the chelating agent, if a counter ion is formed with a metal impurity which may be contained in the polishing composition, and this is captured, it has an effect of suppressing contamination of the object to be polished due to the metal impurity. The chelating agent may be used alone or in combination of two or more. Examples of the chelating agent include an aminocarboxylic acid chelating agent and an organic phosphonic acid chelating agent. Examples of the aminocarboxylic acid chelating agent include ethylenediaminetetraacetic acid, sodium edetate, nitrogen triacetic acid, sodium nitrotriacetate, ammonium oxytriacetate, and hydroxyethylethylenediamine Acetic acid, sodium hydroxyethylethylenediaminetriacetate, diamethylenetriaminepentaacetic acid, sodium diethylenediaminepentaacetate, triamethylenetetraamine hexaacetic acid, and sodium triethylenetetramine hexaacetate. Examples of the organic phosphonic acid chelating agent include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotris(methylenephosphonic acid), ethylenediamine肆 (methylene phosphonic acid), diethylenetriamine penta (methylene phosphonic acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane- 1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methane hydroxyphosphine Acid, 2-phosphonium butane-1,2-dicarboxylic acid, 1-phosphonium butane-2,3,4-tricarboxylic acid and α-methylphosphonium succinic acid. Among these, an organic phosphonic acid chelating agent is preferred, and among them, preferred are, for example, an aminotris(methylenephosphonic acid), an ethylenediamine oxime (methylenephosphonic acid), and two. Ethylene triamine penta (methylene phosphonic acid). Examples of the water-soluble polymer include a cellulose derivative, a starch derivative, a polymer containing an oxygen alkyl group, a polymer containing a nitrogen atom, a vinyl alcohol polymer, and the like. Specific examples thereof include hydroxyethyl cellulose, amylopectin, random copolymer or block copolymer of ethylene oxide and propylene oxide, polyvinyl alcohol, polyisoprene sulfonic acid, and poly Vinyl sulfonic acid, polyalkenyl sulfonic acid, polyisoprene sulfonic acid, polystyrene sulfonate, polyacrylate, polyvinyl acetate, polyethylene glycol, polyvinylpyrrolidone, polypropylene fluorenyl Morpholine, polyacrylamide, and the like. One type of the water-soluble polymer may be used alone or two or more types may be used in combination. The polishing composition disclosed herein may be a composition which does not substantially contain the above water-soluble polymer. Examples of the organic acid include aromatic acids such as formic acid, acetic acid, and propionic acid, aromatic carboxylic acids such as benzoic acid and citric acid, citric acid, oxalic acid, tartaric acid, malic acid, maleic acid, and rich. Horse acid, succinic acid, organic sulfonic acid, organic phosphonic acid, and the like. Examples of the organic acid salt include an alkali metal salt (such as a sodium salt or a potassium salt) of an organic acid, an ammonium salt, and the like. Examples of the inorganic acid include sulfuric acid, nitric acid, hydrochloric acid, and carbonic acid. Examples of the inorganic acid salt include an alkali metal salt (sodium salt, potassium salt, etc.) or an ammonium salt of an inorganic acid. The organic acid and the salt thereof, and the inorganic acid and the salt thereof may be used singly or in combination of two or more. Examples of the preservative and the antifungal agent include an isothiazoline compound, a p-oxybenzoic acid ester, and a phenoxyethanol. The polishing composition disclosed herein preferably contains substantially no oxidizing agent. When the oxidizing agent is contained in the polishing composition, the composition is supplied to the object to be polished (for example, a tantalum wafer), and the surface of the object to be polished is oxidized to form an oxide film, thereby causing the required polishing. Time is getting longer. Specific examples of the oxidizing agent referred to herein include hydrogen peroxide (H). ₂ O ₂ ), sodium persulfate, ammonium persulfate, sodium dichloroisocyanurate, and the like. Further, the polishing composition does not substantially contain an oxidizing agent, and at least intentionally does not contain an oxidizing agent. Therefore, it contains an unavoidable trace amount derived from a raw material or a production method (for example, the oxidant molar concentration in the polishing composition is 0.0005 mol/L or less, preferably 0.0001 mol or less, preferably 0.00001 mol/L. Hereinafter, the polishing composition which is particularly preferably 0.000001 mol/L or less) can be included in the concept of the polishing composition which does not substantially contain an oxidizing agent as referred to herein. The pH of the polishing composition is preferably 8.0 or more (for example, 8.5 or more), more preferably 9.0 or more, still more preferably 9.5 or more (for example, 10.0 or more). When the pH of the polishing composition becomes high, the polishing rate tends to increase. The upper limit of the pH of the polishing composition is not particularly limited, and is preferably 12.0 or less (for example, 11.8 or less), and preferably 11.5 or less. Thereby, the object to be polished can be polished more satisfactorily. The above pH system can be applied to a polishing composition used for polishing a tantalum wafer. <Preparation of Composition for Polishing> The method for producing the polishing composition disclosed herein is not particularly limited. For example, each component contained in the polishing composition may be mixed using a well-known mixing device such as a leaf blender, an ultrasonic disperser, or a homomixer. The aspect in which the components are mixed is not particularly limited. For example, the entire components may be mixed at once, or may be mixed in an appropriately set order. [0077] The polishing composition disclosed herein may be in a single dosage form or in a plurality of dosage forms including two dosage forms. For example, it is also possible to use a liquid A containing a component of a component of the polishing composition (typically a component other than an aqueous solvent) and a liquid B containing the remaining component, and then use it for polishing of the object to be polished. The way to form. [Polishing Liquid] The polishing composition disclosed herein is typically supplied to a polishing object that has been held on a processing carrier made of a glass epoxy resin in the form of a polishing liquid containing the polishing composition. It is used for the grinding of the object to be polished. The above polishing liquid can be, for example, prepared by diluting any of the polishing compositions disclosed herein (typically by dilution with water). Alternatively, the polishing composition may be used as a polishing liquid as it is. That is, the concept of the polishing composition in the technology disclosed herein includes a polishing liquid (working slurry) which is supplied to the object to be polished and used for polishing the object to be polished, and is used as a concentration of the polishing liquid after dilution. Both sides of the liquid (the stock solution of the polishing liquid). As another example of the polishing liquid containing the polishing composition disclosed herein, a polishing liquid obtained by adjusting the pH of the composition can be mentioned. The molar concentration of the amine compound A to be transferred in the polishing liquid disclosed herein is not particularly limited, and is usually 0.00005 mol/L or more, preferably 0.0001 mol/L or more, and 0.00015 mol/L. The above is preferable, and more preferably 0.0002 mol/L or more. Further, in general, the molar concentration is preferably 1 mol/L or less, preferably 0.5 mol/L or less, preferably 0.3 mol/L or less, more preferably 0.1 mol/L or less, for example, 0.05 mol. /L below. The molar concentration of the drop-down compound B in the polishing liquid disclosed herein is not particularly limited, and is typically 0.00005 mol/L or more, preferably 0.0001 mol/L or more, and 0.001 mol/L or more. More preferably, it is more preferably 0.002 mol/L or more. Further, in general, the molar concentration is preferably 1 mol/L or less, preferably 0.5 mol/L or less, preferably 0.3 mol/L or less, more preferably 0.1 mol/L or less, for example, 0.05 mol. /L below. The content of the abrasive grains in the polishing liquid disclosed herein is not particularly limited, but is preferably 0.01% by weight or more, preferably 0.03% by weight or more, more preferably 0.05% by weight or more, and preferably 0.1% by weight or more. Better. Higher grinding rates can be achieved by increasing the amount of abrasive particles. Moreover, from the viewpoint of dispersion stability of the polishing composition, etc., the content is usually preferably 15% by weight or less, preferably 10% by weight or less, more preferably 5% by weight or less, still more preferably 3% by weight or less. 1.2% by weight or less. The pH of the polishing liquid is preferably 8.0 or more (for example, 8.5 or more), more preferably 9.0 or more, still more preferably 9.5 or more, and particularly preferably 10.0 or more (for example, 10.5 or more). When the pH of the polishing liquid becomes high, there is a tendency that the polishing rate is increased. The upper limit of the pH of the polishing liquid is not particularly limited, and is preferably 12.0 or less (for example, 11.8 or less), and preferably 11.5 or less. Thereby, the object to be polished can be polished more satisfactorily. The above pH is suitable for use in polishing the slurry used in the silicon wafer. <Concentrated Liquid> The polishing composition disclosed herein may be in a concentrated form (that is, a form of a concentrated liquid of a polishing liquid) before being supplied to the object to be polished. The polishing composition in such a concentrated form is advantageous from the viewpoints of convenience in production, distribution, storage, and the like, and reduction in cost. The concentration ratio can be, for example, about 2 to 60 times in terms of volume. The polishing composition in the form of a concentrated liquid can be diluted and prepared into a polishing liquid at a desired timing, and the polishing liquid is supplied to the object to be polished. The above dilution system is typically carried out by adding the above-mentioned aqueous solvent to the concentrate. In addition, when the aqueous solvent is a mixed solvent, only a part of the components of the aqueous solvent may be added and diluted, or a mixed solvent containing the components may be added in an amount different from the aqueous solvent. Further, in the polishing composition of a plurality of dosage forms as described later, a part of the components may be diluted, and then mixed with other agents to prepare a polishing liquid, or a mixture of a plurality of agents may be mixed to prepare a mixture. Slurry. The content of the abrasive grains in the above concentrate may be, for example, 50% by weight or less. The content is usually 45% by weight or less, preferably 40% by weight or less, from the viewpoints of the stability of the polishing composition (for example, the dispersion stability of the abrasive grains) or the filterability. In one aspect as appropriate, the content of the abrasive grains may be 30% by weight or less, or may be 20% by weight or less (for example, 15% by weight or less). Moreover, the content of the abrasive grains can be, for example, 1.0% by weight or more, preferably 3.0% by weight or more, more preferably 5.0% by weight or more, from the viewpoints of convenience in production, distribution, storage, etc., or reduction in cost. Preferably, it is 7.0% by weight or more. <Application> The polishing composition disclosed herein can be applied to polishing an object to be polished having various materials and shapes. The material of the object to be polished may be, for example, a metal or a semimetal such as tantalum, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, or the like; an alloy of the same; quartz glass, aluminosilicate glass, glassy carbon, etc. Glassy material; ceramic material such as alumina, ceria, sapphire, tantalum nitride, tantalum nitride, titanium carbide; compound semiconductor substrate material such as tantalum carbide, gallium nitride, gallium arsenide, etc.; Resin materials such as resins. It may be an object to be polished which is composed of a plurality of materials. Among them, an object to be polished for polishing a surface having a crucible is suitably used. The technique disclosed herein is particularly preferably applicable to, for example, a polishing composition containing cerium oxide particles as abrasive grains (typically a polishing composition containing only cerium oxide particles as abrasive grains), and the object to be polished It is a composition for grinding. The shape of the object to be polished is not particularly limited. The polishing composition disclosed herein can be suitably applied to, for example, a polishing object having a flat surface such as a plate shape or a polyhedral shape, or an end portion of the object to be polished (for example, a polished wafer edge). <Polishing Method> The polishing composition disclosed herein can be suitably used as a polishing composition for polishing a crucible (for example, a single crystal or a polycrystalline crucible wafer). Hereinafter, a suitable aspect of the method of polishing the object to be polished using the polishing composition disclosed herein will be described. That is, a polishing liquid (pulp) containing the polishing composition of any of the above disclosed is prepared. The preparation of the polishing liquid includes an operation of applying a concentration adjustment (for example, dilution) to the polishing composition to prepare a polishing liquid. Alternatively, the above polishing composition may be used as a polishing liquid as it is. Further, in the case of a multi-dosage polishing composition, the preparation of the polishing liquid system may include mixing the agents, diluting one or more of the agents before the mixing, and diluting the mixture after the mixing. [0088] Next, the polishing liquid is supplied to the object to be polished, and is polished by a usual method. For example, in the case of performing one polishing step (typically a two-side polishing step) of the object to be polished, the object to be polished subjected to the finishing step is placed on a general polishing apparatus, and the object to be polished is applied to the object to be polished by the polishing pad of the polishing apparatus. The surface (the surface to be polished) is supplied with a polishing liquid. Typically, the polishing liquid is continuously supplied, and the surface of the object to be polished is pressed against the polishing pad and the two are relatively moved (for example, rotationally moved). Thereafter, it is necessary to further perform the final polishing by the second polishing step (typically, the single-side polishing step), and the polishing of the object to be polished is completed. Further, the polishing pad used in the polishing step using the polishing composition disclosed herein is not particularly limited. For example, any of a non-woven type, a suede type, a polyurethane type, a type containing abrasive grains, and a non-abrasive material can be used. [0089] According to the present specification, there is provided a method of producing an abrasive comprising the step of polishing an object to be polished using the polishing composition disclosed herein. The method for producing an abrasive disclosed herein may further comprise the step of applying a final polishing to the object to be polished which has been subjected to the grinding step using the above-mentioned polishing composition. The final polishing here refers to the final polishing step in the manufacturing process of the object (i.e., the step of further polishing is not performed after this step). The final polishing step can be carried out using the polishing composition disclosed herein, or can be carried out using other polishing compositions. In one suitable aspect, the grinding step using the above-described polishing composition is a polishing step upstream of the final polishing. Among them, it can be applied to the preliminary polishing which has finished the finishing step. For example, it may be desirable to use a two-side grinding step (typically one grinding step) after the finishing step, or an initial single-side grinding step (typically the first two grinding steps) performed on the substrate subjected to the two-side grinding step. )in. In the above two-side grinding step and the initial one-side grinding step, the required polishing rate is larger than the final polishing. Therefore, the polishing composition disclosed herein is suitable as a polishing composition for polishing the object to be polished in at least one of the two-side polishing step and the first single-side polishing step (preferably both). [0090] Further, the polishing composition may be used in a form that is discarded after being used once for polishing (so-called "release"), and may be recycled and reused. An example of the method of recycling the polishing composition is to collect the used polishing composition discharged from the polishing apparatus into the tank, and supply the recovered polishing composition to the polishing apparatus again. method. When the polishing composition is recycled, the amount of the polishing composition used as the waste liquid can be reduced as compared with the case of being used as a discharge, so that the environmental load can be reduced. Further, by reducing the amount of the polishing composition used, it is possible to further reduce the cost. In the case of recycling the polishing composition disclosed herein, it is also possible to add a new component to the polishing composition in use at any time, reduce the component by use, or increase it to be an ideal component. In the following, several embodiments of the present invention are described, but it is not intended to limit the invention to the embodiments shown. In addition, in the following descriptions, "parts" and "%" are weight basis unless otherwise defined. ≪ Test A ≫ <Preparation of polishing composition> (Example 1A) A polishing composition was prepared by mixing abrasive grains, an amine compound containing no ether bond, and deionized water. As the abrasive grain system, cerium oxide particles (flat uniform particle diameter: 50 nm) were used. The amine compound containing no ether bond is a triethylenetetramine (hereinafter referred to as "TETA"). The content of the abrasive grains in the polishing composition was 0.5%, and the content of TETA was such that the pH of the polishing composition was 11.2 (less than 1%). (Example 2A) Instead of TETA, N-ethylethylenediamine (hereinafter referred to as "NEDA") was used instead. The content of NEDA in the polishing composition was such that the pH of the polishing composition was 11.2 (less than 1%). The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Example 3A) Instead of TETA, N-(2-aminoethyl)piperazine (hereinafter referred to as "AEP") was used instead. The content of AEP in the polishing composition was such that the pH of the polishing composition was 11.2 (less than 1%). The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Example 4A) In place of TETA, 1,6-diaminohexane (hereinafter referred to as "DAH") was used instead. The content of DAH in the polishing composition was such that the pH of the polishing composition was 11.2 (less than 1%). The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Example 5A) Instead of TETA, 2-(2-aminoethylamino)ethanol (hereinafter referred to as "AEAE") was used instead. The content of AEAE in the polishing composition was such that the pH of the polishing composition was 11.2 (less than 1%). The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 1A) Instead of TETA, potassium hydroxide (hereinafter referred to as "KOH") was used instead. The content of KOH in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 2A) Instead of TETA, tetraethylammonium hydroxide (hereinafter referred to as "TEAH") was used instead. The content of TEAH in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 3A) Instead of TETA, triethylamine (hereinafter referred to as "TEA") was used instead. The content of TEA in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 4A) Instead of TETA, 3-ethoxypropylamine (hereinafter referred to as "EPA") was used instead. The content of EPA in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 5A) Instead of TETA, ethylenediamine (hereinafter referred to as "en") was used instead. The content of en in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. (Comparative Example 6A) Instead of TETA, 1,4-butanediol bis(3-aminopropyl)ether (hereinafter referred to as "BBAE") was used instead. The content of BBAE in the polishing composition was such that the pH of the polishing composition was 11.2. The other operation was carried out in the same manner as in Example 1A to prepare a polishing composition of this example. <Evaluation of Polishing Rate of 矽> The polishing composition of each example was directly used as a polishing liquid, and a polishing test was performed on the ruthenium wafer to evaluate the polishing rate and edge drop amount of ruthenium. The test piece used a 6 cm × 6 cm silicon wafer (conducting type: P type, crystal orientation: <100>). The test piece was ground under the following conditions. Further, the polishing rate was calculated in accordance with the following calculation formulas (a) and (b). The results are shown in the field of Table 1. (a) Grinding wear [cm] = difference in weight of the wafer before and after grinding [g] / density of 矽 [g/cm ³ ](=2.33g/cm ³ ) / grinding object area [cm ² ](=36cm ² (b) Grinding rate [nm/min] = grinding wear [μm] × 10 ³ / Grinding time [minutes] [Grinding conditions] Grinding device: Japan's Engis company made the top grinding machine, type "EJ-380IN" Grinding pad: Nitta Hass company, the trade name "MH S-15A" Grinding pressure: 16.8kPa Number of rotations: 50 rotation/minute rotation number: 40 rotation/minute grinding wear: 8 μm Supply rate of slurry: 100 mL/min (for discharge) Temperature of slurry: 25 °C [0104] <Evaluation of edge drop> The amount of edge drop of the peripheral portion of the polished silicon wafer after evaluation was evaluated. The evaluation of the amount of edge drop was performed by measuring the amount of shape displacement of the surface of the wafer by "NewView 5032" manufactured by Zygo Corporation (USA). Specifically, a relatively flat region from the peripheral end of the tantalum wafer toward the center of 2.0 mm to 4.0 mm is used as a reference field, and a straight line method is used to subtract a straight line (reference straight line) which is approximate to the shape displacement amount of the field. . Next, the point on the reference straight line is used as a reference point, and the difference between the wafer shape displacement amount in the peripheral end position and the above reference point is measured, and this is regarded as the drop value of the wafer. Moreover, if the peripheral end of the germanium wafer has a hanging shape, the turn-off value is negative, and on the other hand, if it is a jump shape, the turn-off value is positive. The results obtained are shown in the "Downdown Value (nm)" column of Table 1. [0105] As shown in Table 1, when the polishing compositions of Examples 1A to 5A which do not contain an ether bond-containing amine compound satisfying any of the above conditions (1) and (2) were used, Comparative Example 1A was used. Compared with 4A and 6A, the polishing rate of the crucible can be excellently improved. Further, in the polishing compositions of Examples 1A to 5A, the end faces of the tantalum wafer were suppressed from being lowered as compared with Comparative Examples 1A to 6A, and the edge reduction amount reduction effect was excellent. From this result, it was confirmed that the content of the abrasive grains can be lowered by using the above-mentioned amine compound having no ether bond, and the high polishing rate and the amount of edge drop can be reduced to a high degree. [0107] ≪ test B≫ <conversion amount X _A And the amount of decline X _B Evaluation > Evaluation of the amount of transition of the amine compound A by the following method X _A And the drop in the amount of compound B _B . First, the compounds described in Tables 2 and 3 were each dissolved in water to adjust to pH 11.0. Thereafter, the polishing composition was prepared so that the concentration of the cerium oxide abrasive grains was 0.5% by mass. The polishing composition was ground using the polishing composition under the following standard polishing test conditions. A relatively flat region from the peripheral end of the silicon wafer toward the center of 2.0 mm to 4.0 mm is used as a reference point, and the difference between the wafer shape displacement amount from the peripheral end to the 0.5 mm position and the reference point is calculated as a rotation. Derating X _A And the amount of decline X _B . The results are shown in Tables 2 and 3. Further, "NEDA" in Table 2 is N-ethylethylenediamine, "AEAE" is 2-(2-aminoethylamino)ethanol, "TETA" is triamethylenetetramine, and "AEP" is N-(2-Aminoethyl)piperazine, "DETA" is diethylenetriamine. In Table 3, "KOH" is potassium hydroxide, "TMAH" is tetramethylammonium hydroxide, "en" is ethylenediamine, "TEA" is triethylamine, and "DEA" is diethylamine. m-DACy" is 1,2-diaminocyclohexane, "EPA" is 3-ethoxypropylamine, "AMB" is 2-amino-1-methoxybutane, and "BBAE" is 1,4-butanediol bis(3-aminopropyl)ether. [Standard polishing test conditions] Grinding device: Japan's Engis company's Zhuo Shang grinder, type "EJ-380IN" Grinding pad: Nitta Hass company, trade name "MH S-15A" Grinding pressure: 16.8 kPa Plate rotation number: 50 Number of rotations of the rotary/grinding head: 40 rotations/minutes Abrasive wear: 8 μm Supply rate of the slurry: 100 mL/min (for discharge) Temperature of the slurry: 25 ° C [0108] [0109] <Preparation of Composition for Grinding> (Example 1B) The abrasive composition was mixed, and the amine compound A, the compound B, and the deionized water were mixed to prepare a polishing composition. As the abrasive grain system, cerium oxide particles (flat uniform particle diameter: 50 nm) were used. The amine compound A was converted to N-ethylethylenediamine (hereinafter referred to as "NEDA"). For the compound B to be dropped, potassium hydroxide (hereinafter referred to as "KOH") was used. The content of the abrasive grains in the polishing composition was 0.5%, the molar concentration of NEDA was 0.01 mol/L, and the molar concentration of KOH was 0.002 mol/L. The pH of the polishing composition was adjusted to 11.0. (Example 2B) Instead of NEDA, 2-(2-aminoethylamino)ethanol (hereinafter referred to as "AEAE") was used instead. The molar concentration of AEAE in the polishing composition was 0.02 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Example 3B) In place of NEDA, triamethylenetetramine (hereinafter referred to as "TETA") was used instead. The molar concentration of TETA in the polishing composition was 0.0003 mol/L, and the molar concentration of KOH was 0.004 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Example 4B) Instead of NEDA, N-(2-aminoethyl)piperazine (hereinafter referred to as "AEP") was used instead. Instead of KOH, tetramethylammonium hydroxide (hereinafter referred to as "TMAH") was used instead. The molar concentration of AEP in the polishing composition was 0.0021 mol/L, and the molar concentration of TMAH was 0.006 mol/L. The content of the abrasive grains in the polishing composition was made 1.1%. Add potassium carbonate as other ingredients (K ₂ CO ₃ ) 0.035%, 0.0025% with ethylenediamine hydrazine (methylene phosphonic acid) hydrate. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Example 5B) Instead of NEDA, AEEE was used instead. Instead of KOH, use TMAH instead. The molar concentration of AEAE in the polishing composition was 0.0026 mol/L, and the molar concentration of TMAH was 0.006 mol/L. The content of the abrasive grains in the polishing composition was made 1.1%. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Example 6B) Instead of NEDA, TETA was used instead. Instead of KOH, ethylenediamine (hereinafter referred to as "en") was used instead. The molar concentration of TETA in the polishing composition was made 0.0013 mol/L, and the molar concentration of en was made 0.013 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Example 7B) Instead of NEDA, TETA was used instead. Instead of KOH, triethylamine (hereinafter referred to as "TEA") was used instead. The molar concentration of TETA in the polishing composition was 0.003 mol/L, and the molar concentration of TEA was 0.003 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Comparative Example 1B) NEDA was not used. The molar concentration of KOH in the polishing composition was 0.004 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Reference Example 2B) KOH was not used. The molar concentration of NEDA in the polishing composition was made 0.018 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Reference Example 3B) KOH was not used, and AEAE was used instead of NEDA. The molar concentration of AEAE in the polishing composition was made 0.035 m/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Reference Example 4B) KOH was not used, and TETA was used instead of NEDA. The molar concentration of TETA in the polishing composition was made 0.025 m/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Comparative Example 5B) NEDA was not used. Instead of KOH, use TMAH instead. The molar concentration of KOH in the polishing composition was 0.0007 mol/L, and the molar concentration of TMAH was 0.006 mol/L. The content of the abrasive grains in the polishing composition was made 1.1%. Add potassium carbonate as other ingredients (K ₂ CO ₃ 0.035%, 0.0025% with ethylenediamine hydrazine (methylene phosphonic acid) hydrate. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Comparative Example 6B) NEDA was not used. Instead of KOH, TMAH and imidazole (hereinafter referred to as "imd") were used instead. The molar concentration of TMAH in the polishing composition was 0.006 mol/L, and the molar concentration of imd was 0.004 mol/L. The content of the abrasive grains in the polishing composition was made 1.1%. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. (Comparative Example 7B) NEDA was not used. Instead of KOH, use en and TEA instead. The molar concentration of en in the polishing composition was 0.0084 mol/L, and the molar concentration of TEA was 0.0014 mol/L. The other operation was carried out in the same manner as in Example 1B to prepare a polishing composition of this example. The types of the amine compound A to be used in the polishing composition of each example, the molar concentration, the type of the drop-off compound B, and the molar concentration are shown in Table 4. <Evaluation of Polishing Rate of 矽> The polishing composition of each example was directly used as a polishing liquid, and a polishing test was performed on the ruthenium wafer to evaluate the polishing rate and edge drop amount of ruthenium. The test piece used a 6 cm × 6 cm silicon wafer (conducting type: P type, crystal orientation: <100>). The test piece was ground using the following conditions. Further, the polishing rate was calculated from the following calculation formulas (a) and (b). The results are shown in the table of Table 4. (a) Grinding wear [cm] = difference in weight of the wafer before and after grinding [g] / density of 矽 [g/cm ³ ](=2.33g/cm ³ ) / grinding object area [cm ² ](=36cm ² (b) Polishing rate [nm/min] = grinding wear [μm] × 103 / grinding time [minutes] [grinding conditions] Grinding device: Japan's Engis company's Zhuo Shang grinder, type "EJ-380IN" Grinding pad: Nitta Hass company, the trade name "MH S-15A" Grinding pressure: 16.8kPa Number of rotations: 50 rotation / minute rotation number: 50 rotation / minute grinding wear: 8μm Supply rate of slurry: 100mL / min (release Use) Temperature of the slurry: 25 ° C [0126] <Evaluation of edge drop amount> The edge drop amount of the peripheral portion of the wafer after the polishing was evaluated. The evaluation of the amount of edge drop was performed by measuring the amount of shape displacement of the surface of the wafer by "NewView 5032" manufactured by Zygo Corporation (USA). Specifically, a relatively flat region from the peripheral end of the silicon wafer toward the center at a position of 2.0 mm to 4.0 mm is used as a reference field, and a straight line method is used to subtract a straight line (reference line) which is approximate to the shape displacement amount of the field. ). Next, the point on the above reference line is used as a reference point, and the difference between the wafer shape displacement amount from the peripheral end to the 0.5 mm position and the above reference point is measured, and this is regarded as the wafer drop amount. Moreover, if the peripheral end of the germanium wafer has a hanging shape, the turn-off value is negative, and on the other hand, if it is a jump shape, the turn-off value is positive. The results obtained are shown in the "Downdown Value (nm)" column of Table 4. [0127] As shown in Table 4, the amount of the drop of any of the polishing compositions of Examples 1B to 7B in which the amine compound A and the compound of the drop compound B were used in combination was within ±70 nm, and in Comparative Example 1B. In comparison with Reference Examples 2B to 4B and Comparative Examples 5B to 7B, the flatness of the surface after polishing was good. As a result, it was confirmed that the polished surface after the thickness difference between the vicinity of the edge and the central portion was small and the flatness was excellent by using the above-mentioned converted amine compound A and the above-mentioned compound B. The specific examples of the present invention have been described in detail above, but these are merely examples, and are not intended to limit the scope of the claims. The technical description of the scope of the patent application includes various modifications and changes to the specific examples described above.

Claims (11)

A polishing composition comprising abrasive grains, water, and an amine compound containing no ether bond, wherein the content of the abrasive grains is 2% by weight or less, and the amine compound containing no ether bond satisfies at least one of the following conditions (1) A hydrocarbon group having 3 or more carbon atoms between two first-order amine groups in the molecule, and having no ether bond; and (2) having a 1-stage amine group, a 2-stage amine group, and a 3-stage amine group An amine group of at least one of the amine groups, and having no ether bond. The polishing composition according to claim 1, wherein the content of the aforementioned amine compound having no ether bond is less than 1% by weight. The polishing composition according to claim 1 or 2, wherein the content of the abrasive grains is less than 1% by weight. The polishing composition according to any one of claims 1 to 3, wherein the abrasive particles are cerium oxide particles. The polishing composition according to any one of claims 1 to 4, which is used for grinding a crucible. A polishing composition comprising abrasive grains, water, a roll-up amine compound A, and a roll-off compound B. The polishing composition according to claim 6, wherein the aforesaid amine compound A comprises an amine compound having no ether bond, and the amine compound having no ether bond satisfies at least one of the following conditions: (1) 2 in the molecule a hydrocarbon group having 3 or more carbon atoms between the first-order amine groups, and having no ether bond; and (2) an amine group having a first-order amine group and at least one of a 2-stage amine group and a 3-stage amine group And, does not have an ether bond. The polishing composition according to claim 6 or 7, wherein the descending compound B comprises at least one compound selected from the group consisting of ammonia, ammonium hydroxide, cerium hydroxide, and metal. At least one basic compound in which the hydroxide is grouped; (B2) an amine group having at least one of a 2-stage amine group and a 3-stage amine group, and an amine compound having no amine group 1; (B3) molecule An amine compound having an ether bond therein; and (B4) an amine compound having a hydrocarbon group having 1 or 2 carbon atoms between the two first-order amine groups in the molecule. The polishing composition according to any one of claims 6 to 8, wherein a ratio of a molar concentration of the above-mentioned converted amine compound A and a falling compound B (turning amine compound A: a falling compound B) is 1:500 ~200:1 range. The polishing composition according to any one of claims 6 to 9, wherein the abrasive particles are cerium oxide particles. The polishing composition according to any one of claims 6 to 10, which is used for grinding a crucible.