TW201831972A - Pixel structure - Google Patents

Pixel structure Download PDF

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TW201831972A
TW201831972A TW106105546A TW106105546A TW201831972A TW 201831972 A TW201831972 A TW 201831972A TW 106105546 A TW106105546 A TW 106105546A TW 106105546 A TW106105546 A TW 106105546A TW 201831972 A TW201831972 A TW 201831972A
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electrode
trunk
branch
extension
portions
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TW106105546A
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Chinese (zh)
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TWI607268B (en
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邱敏軒
林斯巖
鄭瑋銘
徐嘉均
陳儒瑾
黃馨諄
鄭景升
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友達光電股份有限公司
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Priority to TW106105546A priority Critical patent/TWI607268B/en
Priority to CN201710309156.1A priority patent/CN106932975B/en
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Publication of TW201831972A publication Critical patent/TW201831972A/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Geometry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

A pixel structure includes a scan line, a data line, a switching device, a first electrode, and a second electrode. The first electrode includes two first main portions and a plurality of first branch portions. The first branch portion includes an extending portion and two geometric structures disposed between the two first main portions. The first extending portion is disposed between the corresponding two geometric structures. The second electrode includes a second main portion and two second branch portions respectively extending from both sides of the second main portion. The second main portion is disposed between the two first main portions. The second branch portion includes a second extending portion and a trapezoidal structure. The trapezoidal structure connects the second main portion with the corresponding second extending portion. The first branch portions and the second branch portions are staggered.

Description

畫素結構Pixel structure

本發明是有關於一種畫素結構,且特別是有關於一種包括具有第一主幹部與第一分支部的第一電極以及具有第二主幹部與第二分支部的第二電極的畫素結構。The present invention relates to a pixel structure, and more particularly, to a pixel structure including a first electrode having a first trunk portion and a first branch portion and a second electrode having a second trunk portion and a second branch portion. .

隨著虛擬實境(Virtual Reality)的技術日趨成熟,市場上出現了許多與虛擬實境相關的電子產品,例如:頭戴式顯示器(Head mounted display)等。在現有技術中,與虛擬實境相關的電子產品都是利用電腦軟體創造出虛擬空間,並利用各種技術影響使用者的感官,讓使用者能有身入虛擬空間的感覺。With the maturity of Virtual Reality technology, many electronic products related to virtual reality have appeared on the market, such as head-mounted displays. In the prior art, electronic products related to virtual reality use computer software to create a virtual space, and use various technologies to affect the senses of the user, so that the user can feel like being in the virtual space.

為了讓使用者能感受到更逼真的虛擬空間,虛擬影像的連續性就顯得格外重要。對於利用液晶顯示裝置來顯示影像的電子產品來說,影像的連續性與液晶的反應時間有高度的關聯性。當液晶分子的反應時間越短,液晶顯示裝置所顯示出來的影像就能有越優良的連續性。因此,要如何縮短液晶分子的反應時間是目前亟需解決的問題。In order to allow users to feel more realistic virtual space, the continuity of virtual images is particularly important. For an electronic product that uses a liquid crystal display device to display an image, the continuity of the image is highly correlated with the response time of the liquid crystal. The shorter the response time of the liquid crystal molecules, the better the continuity of the image displayed by the liquid crystal display device. Therefore, how to shorten the reaction time of liquid crystal molecules is an urgent problem to be solved.

本發明提供一種畫素結構,藉由畫素結構中第一電極與第二電極的設計,液晶能具有較短的反應時間,進而使液晶效率提升。The invention provides a pixel structure. By designing the first electrode and the second electrode in the pixel structure, the liquid crystal can have a short reaction time, thereby improving the liquid crystal efficiency.

本發明提供一種畫素結構,藉由畫素結構中共用電極與畫素電極的設計,液晶能具有較短的反應時間,進而使液晶效率提升。The invention provides a pixel structure. By designing a common electrode and a pixel electrode in the pixel structure, the liquid crystal can have a short response time, thereby improving the liquid crystal efficiency.

本發明的一種畫素結構,包括掃描線、資料線、開關元件、第一電極以及第二電極。開關元件和掃描線以及資料線電性連接。第一電極包括至少兩條第一主幹部以及多個第一分支部。第一主幹部實質上平行於資料線之延伸方向。第一分支部中之每一者包括至少一第一延伸部以及至少兩個幾何結構。幾何結構位於兩條第一主幹部之間,且第一延伸部位於對應的兩個幾何結構之間。幾何結構在延伸方向上的寬度大於第一延伸部在延伸方向上的寬度。第二電極與第一電極分離。第一電極與第二電極之中的一者和開關元件電性連接。第二電極包括至少一條第二主幹部以及至少兩個第二分支部。第二主幹部位於兩條第一主幹部之間,且實質上平行於資料線之延伸方向。至少兩個第二分支部從第二主幹部延伸,其中至少兩個第二分支部分別對應地連接至第二主幹部的兩側,且至少兩個第二分支部中之至少一者包括至少一第二延伸部以及至少一梯形結構。梯形結構連接於第二主幹部與對應的第二延伸部之間。第一分支部與第二分支部沿資料線之延伸方向交錯排列。A pixel structure of the present invention includes a scanning line, a data line, a switching element, a first electrode, and a second electrode. The switching element is electrically connected to the scanning line and the data line. The first electrode includes at least two first trunk portions and a plurality of first branch portions. The first trunk section is substantially parallel to the extending direction of the data line. Each of the first branch portions includes at least one first extension portion and at least two geometric structures. The geometric structure is located between the two first trunk portions, and the first extension portion is located between the corresponding two geometric structures. The width of the geometric structure in the extending direction is greater than the width of the first extending portion in the extending direction. The second electrode is separated from the first electrode. One of the first electrode and the second electrode is electrically connected to the switching element. The second electrode includes at least one second trunk portion and at least two second branch portions. The second trunk section is located between the two first trunk sections and is substantially parallel to the extending direction of the data line. At least two second branch portions extend from the second trunk portion, wherein at least two second branch portions are correspondingly connected to both sides of the second trunk portion, and at least one of the at least two second branch portions includes at least A second extension portion and at least one trapezoidal structure. The ladder structure is connected between the second trunk portion and the corresponding second extension portion. The first branch portions and the second branch portions are staggered along the extending direction of the data line.

本發明的一種畫素結構,包括一掃描線與一資料線、開關元件、共用電極以及畫素電極。開關元件和掃描線以及資料線電性連接。共用電極包括第一主幹部以及至少兩個第一分支部。第一主幹部實質上平行於資料線之延伸方向。至少兩個第一分支部從第一主幹部延伸。至少兩個第一分支部分別對應地連接至第一主幹部的兩側。至少兩個第一分支部中之至少一者包括至少一第一延伸部以及至少一第一梯形結構。至少一第一梯形結構連接於第一主幹部與對應的第一延伸部之間。畫素電極與共用電極分離,並和開關元件電性連接。畫素電極包括第二主幹部以及至少兩個第二分支部。第二主幹部與第一主幹部重疊。至少兩個第二分支部從第二主幹部延伸。至少兩個第二分支部分別對應地連接至第二主幹部的兩側。至少兩個第二分支部中之至少一者包括至少一第二延伸部以及至少一第二梯形結構。至少一第二梯形結構連接於第二主幹部與對應的第二延伸部之間。第一分支部與第二分支部沿資料線的延伸方向交錯排列。A pixel structure of the present invention includes a scanning line and a data line, a switching element, a common electrode, and a pixel electrode. The switching element is electrically connected to the scanning line and the data line. The common electrode includes a first trunk portion and at least two first branch portions. The first trunk section is substantially parallel to the extending direction of the data line. At least two first branch portions extend from the first trunk portion. At least two first branch portions are respectively connected to both sides of the first trunk portion. At least one of the at least two first branch portions includes at least one first extension portion and at least one first trapezoidal structure. At least one first trapezoidal structure is connected between the first trunk portion and the corresponding first extension portion. The pixel electrode is separated from the common electrode and is electrically connected to the switching element. The pixel electrode includes a second trunk portion and at least two second branch portions. The second backbone is overlapped with the first backbone. At least two second branch portions extend from the second trunk portion. At least two second branch portions are respectively connected to both sides of the second trunk portion. At least one of the at least two second branch portions includes at least one second extension portion and at least one second trapezoidal structure. At least one second trapezoidal structure is connected between the second trunk portion and the corresponding second extension portion. The first branch portions and the second branch portions are staggered along the extending direction of the data line.

基於上述,畫素結構中的第一電極包括至少兩條第一主幹部以及多個第一分支部,第二電極包括至少一條第二主幹部以及至少兩個第二分支部,且第一分支部與第二分支部沿資料線之延伸方向交錯排列。因此,第一電極與第二電極所形成的電場能使液晶具有較短的反應時間,進而使液晶效率提升。第一電極的第一分支部包括幾何結構,第二電極的第二分支部包括梯形結構。因此,第一電極與第二電極的電場能形成具有疏密變化的等位線,進而使液晶驅動及回復的流向實質上為同向,進一步縮短液晶的反應時間。Based on the above, the first electrode in the pixel structure includes at least two first trunk sections and a plurality of first branch sections, the second electrode includes at least one second trunk section and at least two second branch sections, and the first branch The branch and the second branch are staggered along the extending direction of the data line. Therefore, the electric field formed by the first electrode and the second electrode can make the liquid crystal have a short reaction time, thereby further improving the liquid crystal efficiency. The first branch portion of the first electrode includes a geometric structure, and the second branch portion of the second electrode includes a trapezoidal structure. Therefore, the electric field of the first electrode and the second electrode can form isopotential lines with dense and dense changes, thereby making the flow direction of the liquid crystal drive and recovery substantially the same, and further shortening the response time of the liquid crystal.

基於上述,畫素結構中的共用電極包括第一主幹部以及至少兩個第一分支部,畫素電極包括第二主幹部以及至少兩個第二分支部,且第一分支部與第二分支部沿資料線的延伸方向交錯排列。因此,共用電極與畫素電極所形成的電場能使液晶具有較短的反應時間,進而使液晶效率提升。Based on the above, the common electrode in the pixel structure includes a first trunk portion and at least two first branch portions, the pixel electrode includes a second trunk portion and at least two second branch portions, and the first branch portion and the second branch portion The branches are staggered along the extending direction of the data line. Therefore, the electric field formed by the common electrode and the pixel electrode can make the liquid crystal have a short reaction time, thereby further improving the liquid crystal efficiency.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

圖1是依照本發明的一實施例的一種畫素結構100的上視示意圖。請參考圖1,畫素結構100包括掃描線120、資料線130、開關元件TFT1、第一電極150以及第二電極140。FIG. 1 is a schematic top view of a pixel structure 100 according to an embodiment of the present invention. Referring to FIG. 1, the pixel structure 100 includes a scan line 120, a data line 130, a switching element TFT1, a first electrode 150, and a second electrode 140.

開關元件TFT1例如包括半導體層110、閘極122、汲極134和源極132。形成開關元件TFT1的方法例如包括於基底上形成半導體層110。在形成半導體層110之後,依序在半導體層110上形成閘極絕緣層與閘極122,且閘極122與掃描線120電性連接。形成覆蓋閘極122的絕緣層。在絕緣層中形成開孔O1以及開孔O2。接著形成汲極134以及與資料線130電性連接的源極132,其中汲極134透過開孔O2而與半導體層110電性連接,且源極132透過開孔O1而與半導體層110電性連接。在本實施例中,開關元件TFT1為頂閘極(Top gate)結構的薄膜電晶體,然而本發明不限於此。在其他實施例中,開關元件TFT1還可以是底閘極(Bottom gate)結構的薄膜電晶體。The switching element TFT1 includes, for example, a semiconductor layer 110, a gate electrode 122, a drain electrode 134, and a source electrode 132. A method of forming the switching element TFT1 includes, for example, forming a semiconductor layer 110 on a substrate. After the semiconductor layer 110 is formed, a gate insulation layer and a gate electrode 122 are sequentially formed on the semiconductor layer 110, and the gate electrode 122 is electrically connected to the scan line 120. An insulating layer covering the gate electrode 122 is formed. An opening O1 and an opening O2 are formed in the insulating layer. Next, a drain electrode 134 and a source electrode 132 electrically connected to the data line 130 are formed. The drain electrode 134 is electrically connected to the semiconductor layer 110 through the opening O2, and the source electrode 132 is electrically connected to the semiconductor layer 110 through the opening O1. connection. In this embodiment, the switching element TFT1 is a thin film transistor with a top gate structure, but the present invention is not limited thereto. In other embodiments, the switching element TFT1 may also be a thin film transistor with a bottom gate structure.

畫素結構100中的第一電極150與開關元件TFT1之間具有絕緣層,且第一電極150與開關元件TFT1的汲極134透過絕緣層中的開口O3而電性連接。The pixel structure 100 has an insulating layer between the first electrode 150 and the switching element TFT1, and the first electrode 150 and the drain electrode 134 of the switching element TFT1 are electrically connected through the opening O3 in the insulating layer.

第一電極150包括第一主幹部152A、第一主幹部152B以及多個第一分支部153。第一主幹部152A與第一主幹部152B實質上平行於資料線130之延伸方向D1。在本實施例中,部分的第一主幹部152A與部分的資料線130重疊,且部分的第一主幹部152B與部分的相鄰排的另一條資料線130重疊,然而本發明不限於此。在其他實施例中,第一主幹部152A與第一主幹部152B可以分別完全重疊於部分的資料線130以及部分的相鄰排的資料線130。在其他實施例中,第一主幹部152A與第一主幹部152B互相靠近,並且完全不與資料線130重疊。The first electrode 150 includes a first trunk portion 152A, a first trunk portion 152B, and a plurality of first branch portions 153. The first trunk portion 152A and the first trunk portion 152B are substantially parallel to the extending direction D1 of the data line 130. In this embodiment, a portion of the first trunk portion 152A overlaps with a portion of the data line 130, and a portion of the first trunk portion 152B overlaps with another portion of the data line 130 in an adjacent row, but the present invention is not limited thereto. In other embodiments, the first trunk section 152A and the first trunk section 152B may completely overlap with a part of the data line 130 and a part of the adjacent data line 130, respectively. In other embodiments, the first trunk portion 152A and the first trunk portion 152B are close to each other and do not overlap the data line 130 at all.

第一電極150的第一分支部153位於第一主幹部152A與第一主幹部152B之間。第一分支部153中之每一者包括第一延伸部156、幾何結構154A以及幾何結構154B。幾何結構154A以及幾何結構154B位於第一主幹部152A與第一主幹部152B之間,第一延伸部156位於幾何結構154A以及幾何結構154B之間,且第一延伸部156連接於對應的幾何結構154A以及幾何結構154B之間。幾何結構154A以及幾何結構154B在延伸方向D1上的寬度大於第一延伸部156在延伸方向D1上的寬度,具體來說,遠離第一延伸部156之幾何結構154A的一部份在延伸方向D1上的寬度以及遠離第一延伸部156之幾何結構154B的一部份在延伸方向D1上的寬度均大於第一延伸部156在延伸方向D1上的寬度。在一實施例中,幾何結構154A以及幾何結構154B的形狀為梯形,且幾何結構154A以及幾何結構154B最寬的底部(亦即具有在延伸方向D1上之最大寬度的部分)分別與第一主幹部152A以及第一主幹部152B連接,而幾何結構154A的側壁SW1以及幾何結構154B的側壁SW2與資料線130之延伸方向D1之間構成的銳角夾角為30度至75度,然而本發明不限於此。在其他實施例中,幾何結構可以是其他幾何形狀。在一實施例中,第一延伸部156的形狀為長方形,且第一延伸部156在延伸方向D1上之線寬舉例為2微米至4微米。The first branch portion 153 of the first electrode 150 is located between the first trunk portion 152A and the first trunk portion 152B. Each of the first branch portions 153 includes a first extension 156, a geometric structure 154A, and a geometric structure 154B. The geometric structure 154A and the geometric structure 154B are located between the first trunk portion 152A and the first trunk portion 152B, the first extension portion 156 is located between the geometric structure 154A and the geometric structure 154B, and the first extension portion 156 is connected to the corresponding geometric structure Between 154A and geometry 154B. The width of the geometric structure 154A and the geometric structure 154B in the extending direction D1 is larger than the width of the first extending portion 156 in the extending direction D1. Specifically, a part of the geometric structure 154A far from the first extending portion 156 is in the extending direction D1. The width of the first extension portion 156 and the portion of the geometric structure 154B far from the first extension portion 156 in the extension direction D1 are larger than the width of the first extension portion 156 in the extension direction D1. In an embodiment, the shapes of the geometric structures 154A and 154B are trapezoidal, and the widest bottoms of the geometric structures 154A and 154B (that is, the portions having the largest width in the extending direction D1) are respectively different from the first main portion. The stem 152A and the first trunk 152B are connected, and the acute angle formed between the sidewall SW1 of the geometric structure 154A and the sidewall SW2 of the geometric structure 154B and the extending direction D1 of the data line 130 is 30 degrees to 75 degrees, but the present invention is not limited to this. this. In other embodiments, the geometric structure may be other geometric shapes. In an embodiment, the shape of the first extension portion 156 is rectangular, and the line width of the first extension portion 156 in the extension direction D1 is, for example, 2 μm to 4 μm.

在本實施例中,第一電極150還包括連接部151A以及連接部151B,連接部151A與連接部151B各自將第一主幹部152A以及第一主幹部152B連接,舉例來說,連接部151A、連接部151B、第一主幹部152A以及第一主幹部152B共同構成一環狀結構或網狀結構,而連接部151A與開關元件TFT1的汲極134電性連接。在本實施例中,第一主幹部152A、第一主幹部152B、連接部151A以及連接部151B共同組成第一電極150的外框,且第一分支部153位於第一主幹部152A、第一主幹部152B、連接部151A以及連接部151B共同組成的外框之中,然而本發明不限於此。第一電極150也可以不具備連接部151A以及連接部151B,而第一電極150會藉由第一主幹部152A、第一主幹部152B或第一分支部153而與開關元件TFT1的汲極134電性連接。In this embodiment, the first electrode 150 further includes a connection portion 151A and a connection portion 151B. The connection portion 151A and the connection portion 151B each connect the first trunk portion 152A and the first trunk portion 152B. For example, the connection portions 151A, The connection portion 151B, the first trunk portion 152A, and the first trunk portion 152B together form a ring structure or a mesh structure, and the connection portion 151A is electrically connected to the drain electrode 134 of the switching element TFT1. In this embodiment, the first trunk portion 152A, the first trunk portion 152B, the connection portion 151A, and the connection portion 151B collectively form an outer frame of the first electrode 150, and the first branch portion 153 is located at the first trunk portion 152A, the first The main frame 152B, the connection portion 151A, and the connection portion 151B are included in an outer frame. However, the present invention is not limited thereto. The first electrode 150 may not include the connection portion 151A and the connection portion 151B, and the first electrode 150 is connected to the drain electrode 134 of the switching element TFT1 through the first trunk portion 152A, the first trunk portion 152B, or the first branch portion 153. Electrical connection.

第二電極140與第一電極150分離。第二電極140包括第二主幹部142、第二分支部143A以及第二分支部143B。第二主幹部142位於第一主幹部152A以及第一主幹部152B之間,且實質上平行於延伸方向D1。第二主幹部142舉例係由鄰近於連接部151A的位置延伸至鄰近於連接部151B的位置。第二分支部143A以及第二分支部143B分別從第二主幹部142延伸,且第二分支部143A以及第二分支部143B對應地連接至第二主幹部142的兩側。第二分支部143A包括第二延伸部146A以及梯形結構144A。梯形結構144A連接於第二主幹部142與對應的第二延伸部146A之間。第二分支部143B包括第二延伸部146B以及梯形結構144B。梯形結構144B連接於第二主幹部142與對應的第二延伸部146B之間。相鄰的梯形結構144A和梯形結構144B舉例係相對於第二主幹部142呈鏡像配置。第二分支部143A以及第二分支部143B分別與第一分支部153沿著延伸方向D1交錯排列。The second electrode 140 is separated from the first electrode 150. The second electrode 140 includes a second trunk portion 142, a second branch portion 143A, and a second branch portion 143B. The second trunk portion 142 is located between the first trunk portion 152A and the first trunk portion 152B, and is substantially parallel to the extending direction D1. For example, the second trunk portion 142 extends from a position adjacent to the connection portion 151A to a position adjacent to the connection portion 151B. The second branch portion 143A and the second branch portion 143B respectively extend from the second trunk portion 142, and the second branch portion 143A and the second branch portion 143B are correspondingly connected to both sides of the second trunk portion 142. The second branch portion 143A includes a second extension portion 146A and a trapezoidal structure 144A. The ladder structure 144A is connected between the second trunk portion 142 and the corresponding second extension portion 146A. The second branch portion 143B includes a second extension portion 146B and a trapezoidal structure 144B. The ladder structure 144B is connected between the second trunk portion 142 and the corresponding second extension portion 146B. The adjacent trapezoidal structure 144A and the trapezoidal structure 144B are, for example, arranged in a mirror image with respect to the second trunk portion 142. The second branch portions 143A and the second branch portions 143B and the first branch portions 153 are staggered along the extending direction D1, respectively.

在一實施例中,梯形結構144A的側壁SW3以及梯形結構144B的側壁SW4與延伸方向D1構成的銳角夾角舉例為30度至75度。由於梯形結構144A以及梯形結構144B的設計,第一電極與第二電極的電場能形成具有疏密變化的等位線,進而使液晶驅動及回復(液晶排列由有電壓驅動狀態到無電壓驅動狀態的過程)的流向實質上為同向,進一步縮短液晶的反應時間。In one embodiment, the acute angle between the sidewall SW3 of the trapezoidal structure 144A and the sidewall SW4 of the trapezoidal structure 144B and the extending direction D1 is, for example, 30 degrees to 75 degrees. Due to the design of the trapezoidal structure 144A and the trapezoidal structure 144B, the electric field of the first electrode and the second electrode can form isopotential lines with dense and dense changes, thereby driving and recovering the liquid crystal. The flow direction of the process is substantially the same, which further shortens the response time of the liquid crystal.

在一實施例中,第二延伸部146A以及第二延伸部146B為長方形,且第二延伸部146A以及第二延伸部146B在延伸方向D1上具有相同的線寬。在一實施例中,第二延伸部146A以及第二延伸部146B在延伸方向D1上之線寬例如為2微米至4微米。在一實施例中,第二電極140的第二延伸部146A以及第二延伸部146B分別延伸至第一電極150的第一主幹部152A以及第一主幹部152B的下方,並可以藉此降低資料線130對第一電極150形成的電場所造成的影響。In one embodiment, the second extension portion 146A and the second extension portion 146B are rectangular, and the second extension portion 146A and the second extension portion 146B have the same line width in the extension direction D1. In one embodiment, the line width of the second extension portion 146A and the second extension portion 146B in the extension direction D1 is, for example, 2 μm to 4 μm. In an embodiment, the second extension portion 146A and the second extension portion 146B of the second electrode 140 extend below the first trunk portion 152A and the first trunk portion 152B of the first electrode 150, respectively, and can reduce data by this. The influence of the line 130 on the electric field formed by the first electrode 150.

在一實施例中,第一電極150的第一延伸部156與鄰近之第二電極140的第二延伸部146A以及鄰近之第二延伸部146B之間的距離舉例為2微米至4微米。在一實施例中,第一電極150的第一主幹部152A以及第一主幹部152B與鄰近之第二電極140的第二主幹部142之間的距離分別為5至10微米。In an embodiment, the distance between the first extension portion 156 of the first electrode 150, the second extension portion 146A of the adjacent second electrode 140, and the adjacent second extension portion 146B is, for example, 2 μm to 4 μm. In an embodiment, the distances between the first trunk portion 152A and the first trunk portion 152B of the first electrode 150 and the second trunk portion 142 of the adjacent second electrode 140 are 5 to 10 microns, respectively.

在本實施例中,第二電極140電性連接到共用電壓,而第一電極150電性連接到開關元件TFT1,然而本發明不限於此。在其他實施例中,第一電極150電性連接到共用電壓,而第二電極140電性連接到開關元件TFT1。換句話說,本發明並不限制第二電極140為共用電極而第一電極150為畫素電極。在本實施例中,第二電極140所在的膜層位於第一電極150所在的膜層與資料線130所在的膜層之間,然而本發明不限於此。在其他實施例中,第一電極150所在的膜層可位於第二電極140所在的膜層與資料線130所在的膜層之間。換句話說,在其他實施例中,第一電極150所在的膜層與第二電極140所在的膜層可以互相交換。In this embodiment, the second electrode 140 is electrically connected to a common voltage, and the first electrode 150 is electrically connected to the switching element TFT1. However, the present invention is not limited thereto. In other embodiments, the first electrode 150 is electrically connected to a common voltage, and the second electrode 140 is electrically connected to the switching element TFT1. In other words, the present invention does not limit the second electrode 140 as a common electrode and the first electrode 150 as a pixel electrode. In this embodiment, the film layer where the second electrode 140 is located is located between the film layer where the first electrode 150 is located and the film layer where the data line 130 is located, but the present invention is not limited thereto. In other embodiments, the film layer where the first electrode 150 is located may be located between the film layer where the second electrode 140 is located and the film layer where the data line 130 is located. In other words, in other embodiments, the film layer where the first electrode 150 is located and the film layer where the second electrode 140 is located may be exchanged with each other.

在本實施例中,第一電極150與第二電極140的設計,可以將顯示器中的液晶層分為四種具有不同方向之水平電場的液晶作動區,且可以將相鄰液晶作動區之液晶分子的驅動及回復流向實質上調整為同一方向,進而使液晶分子的反應時間大幅縮短。In this embodiment, the design of the first electrode 150 and the second electrode 140 can divide the liquid crystal layer in the display into four types of liquid crystal operating regions with horizontal electric fields in different directions, and can separate liquid crystals in adjacent liquid crystal operating regions. The driving and recovery flow directions of the molecules are adjusted to be substantially the same direction, thereby further shortening the reaction time of the liquid crystal molecules.

圖2是依照本發明的一實施例的一種畫素結構200的上視示意圖。在此必須說明的是,圖2的實施例沿用圖1的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 2 is a schematic top view of a pixel structure 200 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 follows the component numbers and parts of the embodiment of FIG. 1, wherein the same or similar reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖2的畫素結構200與圖1的畫素結構100的差異在於:畫素結構200的第一電極250以及第二電極240與畫素結構100的第一電極150以及第二電極140具有不同的形狀。The difference between the pixel structure 200 of FIG. 2 and the pixel structure 100 of FIG. 1 is that the first electrode 250 and the second electrode 240 of the pixel structure 200 are different from the first electrode 150 and the second electrode 140 of the pixel structure 100. shape.

第一電極250包括第一主幹部252A、第一主幹部252B以及多個第一分支部253。第一主幹部252A與第一主幹部252B實質上平行於資料線130之延伸方向D1。The first electrode 250 includes a first trunk portion 252A, a first trunk portion 252B, and a plurality of first branch portions 253. The first trunk portion 252A and the first trunk portion 252B are substantially parallel to the extending direction D1 of the data line 130.

第一電極250的第一分支部253位於第一主幹部252A與第一主幹部252B之間。第一分支部253中之每一者包括第一延伸部256、幾何結構254A、幾何結構254B、凸起258A以及凸起258B。幾何結構254A以及幾何結構254B位於第一主幹部252A與第一主幹部252B之間,第一延伸部256位於幾何結構254A以及幾何結構254B之間,且第一延伸部256連接於對應的幾何結構254A以及幾何結構254B之間。幾何結構254A以及幾何結構254B在延伸方向D1上的寬度大於第一延伸部256在延伸方向D1上的寬度,具體來說,遠離第一延伸部256之幾何結構254A的一部份在延伸方向D1上的寬度以及遠離第一延伸部256之幾何結構254B的一部份在延伸方向D1上的寬度均大於第一延伸部256在延伸方向D1上的寬度。凸起258A以及凸起258B位於第二電極240的第二主幹部2421以及第二主幹部2422之間,相鄰的凸起258A以及凸起258B舉例係相對於第一延伸部256呈鏡像配置。The first branch portion 253 of the first electrode 250 is located between the first trunk portion 252A and the first trunk portion 252B. Each of the first branch portions 253 includes a first extension 256, a geometric structure 254A, a geometric structure 254B, a protrusion 258A, and a protrusion 258B. The geometric structure 254A and the geometric structure 254B are located between the first trunk 252A and the first trunk 252B, the first extension 256 is located between the geometry 254A and the 254B, and the first extension 256 is connected to the corresponding geometry 254A and geometry 254B. The width of the geometric structure 254A and the geometric structure 254B in the extending direction D1 is larger than the width of the first extending portion 256 in the extending direction D1. Specifically, a part of the geometric structure 254A far from the first extending portion 256 is in the extending direction D1. The width in the extension direction D1 and a portion of the geometric structure 254B far from the first extension portion 256 in the extension direction D1 are larger than the width of the first extension portion 256 in the extension direction D1. The protrusions 258A and 258B are located between the second trunk portion 2421 and the second trunk portion 2422 of the second electrode 240. The adjacent protrusions 258A and the protrusions 258B are arranged in a mirror image with respect to the first extension portion 256, for example.

在一實施例中,凸起258A以及凸起258B的形狀包括三角形,其中凸起258A以及凸起258B的底部與第一延伸部256連接,且凸起258A以及凸起258B分別朝向鄰近之另一個第二延伸部256,且凸起258A以及凸起258B的頂部角度為60度至150度,此處的頂部角度指的是遠離與其底部相連的第一延伸部256之尖端部之角度。在本發明一實施例中,凸起258A與凸起258B對應地設置於第二延伸部256的兩側,且凸起258A與凸起258B的頂點互相對齊。In an embodiment, the shapes of the protrusions 258A and 258B include a triangle, wherein the bottoms of the protrusions 258A and 258B are connected to the first extension portion 256, and the protrusions 258A and 258B respectively face another adjacent one. The second extension portion 256 has a top angle of the protrusions 258A and 258B of 60 degrees to 150 degrees, and the top angle here refers to an angle away from the tip of the first extension portion 256 connected to the bottom thereof. In an embodiment of the present invention, the protrusions 258A and the protrusions 258B are correspondingly disposed on both sides of the second extension portion 256, and the vertices of the protrusions 258A and the protrusions 258B are aligned with each other.

第二電極240與第一電極250分離。第二電極240包括第二主幹部2421、第二主幹部2422、第二分支部2431A、第二分支部2431B、第二分支部2432A以及第二分支部2432B。第二主幹部2421以及第二主幹部2422位於第一主幹部252A以及第一主幹部252B之間,且實質上平行於延伸方向D1。The second electrode 240 is separated from the first electrode 250. The second electrode 240 includes a second trunk portion 2421, a second trunk portion 2422, a second branch portion 2431A, a second branch portion 2431B, a second branch portion 2432A, and a second branch portion 2432B. The second trunk portion 2421 and the second trunk portion 2422 are located between the first trunk portion 252A and the first trunk portion 252B and are substantially parallel to the extending direction D1.

第二分支部2431A以及第二分支部2431B分別從第二主幹部2421延伸,且第二分支部2431A以及第二分支部2431B對應地連接至第二主幹部2421的兩側,相鄰的第二分支部2431A以及第二分支部2431B舉例係相對於第二主幹部2421呈鏡像配置。第二分支部2431A包括第二延伸部2461A以及梯形結構2441A。梯形結構2441A連接於第二主幹部2421與對應的第二延伸部2461A之間。第二分支部2431B包括第二延伸部2461B以及梯形結構2441B。梯形結構2441B連接於第二主幹部2421與對應的第二延伸部2461B之間。The second branch portion 2431A and the second branch portion 2431B respectively extend from the second trunk portion 2421, and the second branch portion 2431A and the second branch portion 2431B are correspondingly connected to both sides of the second trunk portion 2421, and the adjacent second The branch portion 2431A and the second branch portion 2431B are exemplarily arranged in a mirror image with respect to the second trunk portion 2421. The second branch portion 2431A includes a second extension portion 2461A and a trapezoidal structure 2441A. The ladder structure 2441A is connected between the second trunk portion 2421 and the corresponding second extension portion 2461A. The second branch portion 2431B includes a second extension portion 2461B and a trapezoidal structure 2441B. The ladder structure 2441B is connected between the second trunk portion 2421 and the corresponding second extension portion 2461B.

第二分支部2432A以及第二分支部2432B分別從第二主幹部2422延伸,且第二分支部2432A以及第二分支部2432B對應地連接至第二主幹部2422的兩側,相鄰的第二分支部2432A以及第二分支部2432B舉例係相對於第二主幹部2422呈鏡像配置。第二分支部2432A包括第二延伸部2462A以及梯形結構2442A。梯形結構2442A連接於第二主幹部2422與對應的第二延伸部2462A之間。第二分支部2432B包括第二延伸部2462B以及梯形結構2442B。梯形結構2442B連接於第二主幹部2422與對應的第二延伸部2462B之間。The second branch portion 2432A and the second branch portion 2432B respectively extend from the second trunk portion 2422, and the second branch portion 2432A and the second branch portion 2432B are correspondingly connected to both sides of the second trunk portion 2422, and the adjacent second For example, the branch portion 2432A and the second branch portion 2432B are arranged in a mirror image with respect to the second trunk portion 2422. The second branch portion 2432A includes a second extension portion 2462A and a trapezoidal structure 2442A. The ladder structure 2442A is connected between the second trunk portion 2422 and the corresponding second extension portion 2462A. The second branch portion 2432B includes a second extension portion 2462B and a trapezoidal structure 2442B. The ladder structure 2442B is connected between the second trunk portion 2422 and the corresponding second extension portion 2462B.

在一實施例中,第二分支部2431B與第二分支部2432A連接於第二主幹部2421以及第二主幹部2422之間,第二分支部2431B位於第二主幹部2421以及第二分支部2432A之間,第二分支部2432A位於第二分支部2431B以及第二主幹部2422之間。第二分支部2431A、第二分支部2431B、第二分支部2432A以及第二分支部2432B分別與第一分支部253沿著延伸方向D1交錯排列。In one embodiment, the second branch portion 2431B and the second branch portion 2432A are connected between the second trunk portion 2421 and the second trunk portion 2422. The second branch portion 2431B is located in the second trunk portion 2421 and the second branch portion 2432A. In between, the second branch portion 2432A is located between the second branch portion 2431B and the second trunk portion 2422. The second branch portion 2431A, the second branch portion 2431B, the second branch portion 2432A, and the second branch portion 2432B are arranged alternately with the first branch portion 253 along the extending direction D1.

圖3是依照本發明的一實施例的一種畫素結構300的上視示意圖。在此必須說明的是,圖3的實施例沿用圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 3 is a schematic top view of a pixel structure 300 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 3 inherits the component numbers and parts of the embodiment of FIG. 2, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖3的畫素結構300與圖2的畫素結構200的差異在於:畫素結構300的第一電極350以及第二電極340與畫素結構200的第一電極250以及第二電極240具有不同的形狀。The difference between the pixel structure 300 of FIG. 3 and the pixel structure 200 of FIG. 2 is that the first electrode 350 and the second electrode 340 of the pixel structure 300 are different from the first electrode 250 and the second electrode 240 of the pixel structure 200. shape.

畫素結構300的第一電極350包括第一主幹部352A、第一主幹部352B以及多個第一分支部353。第一主幹部352A與第一主幹部352B實質上平行於資料線130之延伸方向D1。The first electrode 350 of the pixel structure 300 includes a first trunk portion 352A, a first trunk portion 352B, and a plurality of first branch portions 353. The first trunk portion 352A and the first trunk portion 352B are substantially parallel to the extending direction D1 of the data line 130.

第一電極350的第一分支部353位於第一主幹部352A與第一主幹部352B之間。第一分支部353中之每一者包括第一延伸部356、幾何結構354A、幾何結構354B、凸起358A、凸起358B、凸起358C以及凸起358D。幾何結構354A以及幾何結構354B位於第一主幹部352A與第一主幹部352B之間,第一延伸部356位於幾何結構354A以及幾何結構354B之間,且第一延伸部356連接於對應的幾何結構354A以及幾何結構354B之間。幾何結構354A以及幾何結構354B在延伸方向D1上的寬度大於第一延伸部356在延伸方向D1上的寬度,具體來說,遠離第一延伸部356之幾何結構354A的一部份在延伸方向D1上的寬度以及遠離第一延伸部356之幾何結構354B的一部份在延伸方向D1上的寬度均大於第一延伸部356在延伸方向D1上的寬度。凸起358A以及凸起358B位於第二電極340的第二主幹部3422以及第二主幹部3423之間,且凸起358C以及凸起358D位於第二電極340的第二主幹部3421以及第二主幹部3422之間。在本發明之一實施例中,凸起358A的頂點與凸起358C的頂點之間的距離約為10微米至20微米,凸起358B的頂點與凸起358D的頂點之間的距離約為10微米至20微米,凸起358A的頂點與凸起358C的頂點之間的距離約等於凸起358B的頂點與凸起358D的頂點之間的距離。The first branch portion 353 of the first electrode 350 is located between the first trunk portion 352A and the first trunk portion 352B. Each of the first branch portions 353 includes a first extension 356, a geometric structure 354A, a geometric structure 354B, a protrusion 358A, a protrusion 358B, a protrusion 358C, and a protrusion 358D. The geometric structure 354A and the geometric structure 354B are located between the first trunk portion 352A and the first trunk portion 352B, the first extension portion 356 is located between the geometric structure 354A and the geometric structure 354B, and the first extension portion 356 is connected to the corresponding geometric structure Between 354A and geometry 354B. The width of the geometric structure 354A and the geometric structure 354B in the extending direction D1 is larger than the width of the first extending portion 356 in the extending direction D1. Specifically, a part of the geometric structure 354A far from the first extending portion 356 is in the extending direction D1. The width in the extension direction D1 and a part of the geometric structure 354B far from the first extension 356 are larger than the width in the extension direction D1 of the first extension 356. The protrusion 358A and the protrusion 358B are located between the second trunk portion 3422 and the second stem portion 3423 of the second electrode 340, and the protrusion 358C and the protrusion 358D are located on the second trunk portion 3421 and the second main portion of the second electrode 340 Between cadres 3422. In one embodiment of the present invention, the distance between the apex of the protrusion 358A and the apex of the protrusion 358C is about 10 micrometers to 20 microns, and the distance between the apex of the protrusion 358B and the apex of the protrusion 358D is about 10 The distance between the apex of the protrusion 358A and the apex of the protrusion 358C is approximately equal to the distance between the apex of the protrusion 358B and the apex of the protrusion 358D.

第二電極340與第一電極350分離。畫素結構300的第二電極340包括第二主幹部3421、第二主幹部3422、第二主幹部3423、第二分支部3431A、第二分支部3431B、第二分支部3432A、第二分支部3432B、第二分支部3433A以及第二分支部3433B。第二主幹部3421、第二主幹部3422以及第二主幹部3423位於第一主幹部352A以及第一主幹部352B之間,且實質上平行於延伸方向D1。The second electrode 340 is separated from the first electrode 350. The second electrode 340 of the pixel structure 300 includes a second trunk portion 3421, a second trunk portion 3422, a second trunk portion 3423, a second branch portion 3431A, a second branch portion 3431B, a second branch portion 3432A, and a second branch portion. 3432B, the second branch portion 3433A, and the second branch portion 3433B. The second trunk section 3421, the second trunk section 3422, and the second trunk section 3423 are located between the first trunk section 352A and the first trunk section 352B and are substantially parallel to the extending direction D1.

第二分支部3431A以及第二分支部3431B分別從第二主幹部3421延伸,且第二分支部3431A以及第二分支部3431B對應地連接至第二主幹部3421的兩側。第二分支部3431A包括第二延伸部3461A以及梯形結構3441A。梯形結構3441A連接於第二主幹部3421與對應的第二延伸部3461A之間。第二分支部3431B包括第二延伸部3461B以及梯形結構3441B。梯形結構3441B連接於第二主幹部3421與對應的第二延伸部3461B之間。The second branch portion 3431A and the second branch portion 3431B respectively extend from the second trunk portion 3421, and the second branch portion 3431A and the second branch portion 3431B are correspondingly connected to both sides of the second trunk portion 3421. The second branch portion 3431A includes a second extension portion 3461A and a trapezoidal structure 3441A. The ladder structure 3441A is connected between the second trunk portion 3421 and the corresponding second extension portion 3461A. The second branch portion 3431B includes a second extension portion 3461B and a trapezoidal structure 3441B. The ladder structure 3441B is connected between the second trunk portion 3421 and the corresponding second extension portion 3461B.

第二分支部3432A以及第二分支部3432B分別從第二主幹部3422延伸,且第二分支部3432A以及第二分支部3432B對應地連接至第二主幹部3422的兩側。第二分支部3432A包括第二延伸部3462A以及梯形結構3442A。梯形結構3442A連接於第二主幹部3422與對應的第二延伸部3462A之間。第二分支部3432B包括第二延伸部3462B以及梯形結構3442B。梯形結構3442B連接於第二主幹部3422與對應的第二延伸部3462B之間。The second branch portion 3432A and the second branch portion 3432B respectively extend from the second trunk portion 3422, and the second branch portion 3432A and the second branch portion 3432B are correspondingly connected to both sides of the second trunk portion 3422. The second branch portion 3432A includes a second extension portion 3462A and a trapezoidal structure 3442A. The ladder structure 3442A is connected between the second trunk portion 3422 and the corresponding second extension portion 3462A. The second branch portion 3432B includes a second extension portion 3462B and a trapezoidal structure 3442B. The ladder structure 3442B is connected between the second trunk portion 3422 and the corresponding second extension portion 3462B.

第二分支部3433A以及第二分支部3433B從第二主幹部3423延伸,且第二分支部3433A以及第二分支部3433B對應地連接至第二主幹部3423的兩側。第二分支部3433A包括第二延伸部3463A以及梯形結構3443A。梯形結構3443A連接於第二主幹部3423與對應的第二延伸部3463A之間。第二分支部3433B包括第二延伸部3463B以及梯形結構3443B。梯形結構3443B連接於第二主幹部3423與對應的第二延伸部3463B之間。The second branch portion 3433A and the second branch portion 3433B extend from the second trunk portion 3423, and the second branch portion 3433A and the second branch portion 3433B are correspondingly connected to both sides of the second trunk portion 3423. The second branch portion 3433A includes a second extension portion 3463A and a trapezoidal structure 3443A. The ladder structure 3443A is connected between the second trunk portion 3423 and the corresponding second extension portion 3463A. The second branch portion 3433B includes a second extension portion 3463B and a trapezoidal structure 3443B. The ladder structure 3443B is connected between the second trunk portion 3423 and the corresponding second extension portion 3463B.

在一實施例中,第二分支部3431B與第二分支部3432A連接於第二主幹部3421以及第二主幹部3422之間,且第二分支部3432B與第二分支部3433A連接於第二主幹部3422以及第二主幹部3423之間。第二分支部3431A、第二分支部3431B、第二分支部3432A、第二分支部3432B、第二分支部3433A以及第二分支部3433B分別與第一分支部353沿著延伸方向D1交錯排列。In one embodiment, the second branch portion 3431B and the second branch portion 3432A are connected between the second trunk portion 3421 and the second trunk portion 3422, and the second branch portion 3432B and the second branch portion 3433A are connected to the second main portion. Between the cadres 3422 and the second main cadres 3423. The second branch portion 3431A, the second branch portion 3431B, the second branch portion 3432A, the second branch portion 3432B, the second branch portion 3433A, and the second branch portion 3433B are staggered with the first branch portion 353 along the extending direction D1, respectively.

圖4是依照本發明的一實施例的一種畫素結構400的上視示意圖。在此必須說明的是,圖4的實施例沿用圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 4 is a schematic top view of a pixel structure 400 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 inherits the component numbers and parts of the embodiment of FIG. 2, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖4的畫素結構400與圖2的畫素結構200的差異在於:畫素結構400的第一電極450以及第二電極440與畫素結構200的第一電極250以及第二電極240具有不同的形狀。The pixel structure 400 in FIG. 4 is different from the pixel structure 200 in FIG. 2 in that the first electrode 450 and the second electrode 440 of the pixel structure 400 are different from the first electrode 250 and the second electrode 240 of the pixel structure 200. shape.

第一電極450包括第一主幹部452A、第一主幹部452B以及多個第一分支部453。第一主幹部452A與第一主幹部452B實質上平行於資料線130之延伸方向D1。The first electrode 450 includes a first trunk portion 452A, a first trunk portion 452B, and a plurality of first branch portions 453. The first trunk portion 452A and the first trunk portion 452B are substantially parallel to the extending direction D1 of the data line 130.

第一電極450的第一分支部453位於第一主幹部452A與第一主幹部452B之間。第一分支部453中之每一者包括第一延伸部456、幾何結構454A、幾何結構454B、凸起458A、凸起458B、凸起458C、凸起458D、凸起458E以及凸起458F。幾何結構454A以及幾何結構454B位於第一主幹部452A與第一主幹部452B之間,第一延伸部456位於幾何結構454A以及幾何結構454B之間,且第一延伸部456連接於對應的幾何結構454A以及幾何結構454B之間。幾何結構454A以及幾何結構454B在延伸方向D1上的寬度大於第一延伸部456在延伸方向D1上的寬度,具體來說,遠離第一延伸部456之幾何結構454A的一部份在延伸方向D1上的寬度以及遠離第一延伸部456之幾何結構454B的一部份在延伸方向D1上的寬度均大於第一延伸部456在延伸方向D1上的寬度。凸起458A以及凸起458B位於第二電極440的第二主幹部4424以及第二主幹部4423之間,凸起458C以及凸起458D位於第二電極440的第二主幹部4423以及第二主幹部4422之間,且凸起458E以及凸起458F位於第二電極440的第二主幹部4422以及第二主幹部4421之間。The first branch portion 453 of the first electrode 450 is located between the first trunk portion 452A and the first trunk portion 452B. Each of the first branch portions 453 includes a first extension 456, a geometric structure 454A, a geometric structure 454B, a protrusion 458A, a protrusion 458B, a protrusion 458C, a protrusion 458D, a protrusion 458E, and a protrusion 458F. The geometric structure 454A and the geometric structure 454B are located between the first trunk portion 452A and the first trunk portion 452B, the first extension portion 456 is located between the geometric structure 454A and the geometric structure 454B, and the first extension portion 456 is connected to the corresponding geometric structure Between 454A and geometry 454B. The width of the geometric structure 454A and the geometric structure 454B in the extending direction D1 is larger than the width of the first extending portion 456 in the extending direction D1. Specifically, a part of the geometric structure 454A far from the first extending portion 456 is in the extending direction D1. The width in the extension direction D1 and a portion of the geometric structure 454B far from the first extension portion 456 in the extension direction D1 are larger than the width of the first extension portion 456 in the extension direction D1. The protrusions 458A and 458B are located between the second trunk portion 4424 and the second trunk portion 4423 of the second electrode 440, and the protrusions 458C and 458D are located on the second trunk portion 4423 and the second trunk portion of the second electrode 440. 4422, and the protrusions 458E and 458F are located between the second trunk portion 4422 and the second trunk portion 4421 of the second electrode 440.

第二電極440與第一電極450分離。第二電極440包括第二主幹部4421、第二主幹部4422、第二主幹部4423、第二主幹部4424、第二分支部4431A、第二分支部4431B、第二分支部4432A、第二分支部4432B、第二分支部4433A、第二分支部4433B、第二分支部4434A以及第二分支部4434B。第二主幹部4421、第二主幹部4422、第二主幹部4423以及第二主幹部4424位於第一主幹部452A以及第一主幹部452B之間,且實質上平行於延伸方向D1。The second electrode 440 is separated from the first electrode 450. The second electrode 440 includes a second trunk portion 4421, a second trunk portion 4422, a second trunk portion 4423, a second trunk portion 4424, a second branch portion 4431A, a second branch portion 4431B, a second branch portion 4432A, and a second branch. The branch portion 4432B, the second branch portion 4433A, the second branch portion 4433B, the second branch portion 4434A, and the second branch portion 4434B. The second trunk section 4421, the second trunk section 4422, the second trunk section 4423, and the second trunk section 4424 are located between the first trunk section 452A and the first trunk section 452B and are substantially parallel to the extending direction D1.

第二分支部4431A以及第二分支部4431B從第二主幹部4421延伸,且第二分支部4431A以及第二分支部4431B對應地連接至第二主幹部4421的兩側。第二分支部4431A包括第二延伸部4461A以及梯形結構4441A。梯形結構4441A連接於第二主幹部4421與對應的第二延伸部4461A之間。第二分支部4431B包括第二延伸部4461B以及梯形結構4441B。梯形結構4441B連接於第二主幹部4421與對應的第二延伸部4461B之間。The second branch portion 4431A and the second branch portion 4431B extend from the second trunk portion 4421, and the second branch portion 4431A and the second branch portion 4431B are correspondingly connected to both sides of the second trunk portion 4421. The second branch portion 4431A includes a second extension portion 4461A and a trapezoidal structure 4441A. The ladder structure 4441A is connected between the second trunk portion 4421 and the corresponding second extension portion 4461A. The second branch portion 4431B includes a second extension portion 4461B and a trapezoidal structure 4441B. The ladder structure 4441B is connected between the second trunk portion 4421 and the corresponding second extension portion 4461B.

第二分支部4432A以及第二分支部4432B分別從第二主幹部4422延伸,且第二分支部4432A以及第二分支部4432B對應地連接至第二主幹部4422的兩側。第二分支部4432A包括第二延伸部4462A以及梯形結構4442A。梯形結構4442A連接於第二主幹部4422與對應的第二延伸部4462A之間。第二分支部4432B包括第二延伸部4462B以及梯形結構4442B。梯形結構4442B連接於第二主幹部4422與對應的第二延伸部4462B之間。The second branch portion 4432A and the second branch portion 4432B respectively extend from the second trunk portion 4422, and the second branch portion 4432A and the second branch portion 4432B are correspondingly connected to both sides of the second trunk portion 4422. The second branch portion 4432A includes a second extension portion 4462A and a trapezoidal structure 4442A. The ladder structure 4442A is connected between the second trunk portion 4422 and the corresponding second extension portion 4462A. The second branch portion 4432B includes a second extension portion 4462B and a trapezoidal structure 4442B. The ladder structure 4442B is connected between the second trunk portion 4422 and the corresponding second extension portion 4462B.

第二分支部4433A以及第二分支部4433B分別從第二主幹部4423延伸,且第二分支部4433A以及第二分支部4433B對應地連接至第二主幹部4423的兩側。第二分支部4433A包括第二延伸部4463A以及梯形結構4443A。梯形結構4443A連接於第二主幹部4423與對應的第二延伸部4463A之間。第二分支部4433B包括第二延伸部4463B以及梯形結構4443B。梯形結構4443B連接於第二主幹部4423與對應的第二延伸部4463B之間。The second branch portion 4433A and the second branch portion 4433B respectively extend from the second trunk portion 4423, and the second branch portion 4433A and the second branch portion 4433B are correspondingly connected to both sides of the second trunk portion 4423. The second branch portion 4433A includes a second extension portion 4463A and a trapezoidal structure 4443A. The ladder structure 4443A is connected between the second trunk portion 4423 and the corresponding second extension portion 4463A. The second branch portion 4433B includes a second extension portion 4463B and a trapezoidal structure 4443B. The ladder structure 4443B is connected between the second trunk portion 4423 and the corresponding second extension portion 4463B.

第二分支部4434A以及第二分支部4434B分別從第二主幹部4424延伸,且第二分支部4434A以及第二分支部4434B對應地連接至第二主幹部4424的兩側。第二分支部4434A包括第二延伸部4464A以及梯形結構4444A。梯形結構4444A連接於第二主幹部4424與對應的第二延伸部4464A之間。第二分支部4434B包括第二延伸部4464B以及梯形結構4444B。梯形結構4444B連接於第二主幹部4424與對應的第二延伸部4464B之間。The second branch portion 4434A and the second branch portion 4434B respectively extend from the second trunk portion 4424, and the second branch portion 4434A and the second branch portion 4434B are correspondingly connected to both sides of the second trunk portion 4424. The second branch portion 4434A includes a second extension portion 4464A and a trapezoidal structure 4444A. The ladder structure 4444A is connected between the second trunk portion 4424 and the corresponding second extension portion 4464A. The second branch portion 4434B includes a second extension portion 4464B and a trapezoidal structure 4444B. The ladder structure 4444B is connected between the second trunk portion 4424 and the corresponding second extension portion 4464B.

在一實施例中,第二分支部4431B與第二分支部4432A連接於第二主幹部4421以及第二主幹部4422之間,第二分支部4432B與第二分支部4433A連接於第二主幹部4422以及第二主幹部4423之間,且第二分支部4433B與第二分支部4434A連接於第二主幹部4423以及第二主幹部4424之間。第二分支部4431A、第二分支部4431B、第二分支部4432A、第二分支部4432B、第二分支部4433A、第二分支部4433B、第二分支部4434A以及第二分支部4434B分別與第一分支部453沿著延伸方向D1交錯排列。In an embodiment, the second branch portion 4431B and the second branch portion 4432A are connected between the second trunk portion 4421 and the second trunk portion 4422, and the second branch portion 4432B and the second branch portion 4433A are connected to the second trunk portion. 4422 and the second trunk portion 4423, and the second branch portion 4433B and the second branch portion 4434A are connected between the second trunk portion 4423 and the second trunk portion 4424. The second branch portion 4431A, the second branch portion 4431B, the second branch portion 4432A, the second branch portion 4432B, the second branch portion 4433A, the second branch portion 4433B, the second branch portion 4434A, and the second branch portion 4434B are respectively connected to the first One branch portions 453 are staggered along the extending direction D1.

在一實施例中,第一電極的第一分支部舉例包括周期性凸起,第一電極的第一分支部與第二電極的第二分支部因為凸起造成水平距離上的變化,導致第一電極與第二電極所形成的電場能將顯示器中的液晶層分為四種具有不同方向之水平電場的液晶作動區,且可以將相鄰液晶作動區之液晶分子的驅動及回復流向實質上調整為同一方向,進而使液晶分子的反應時間大幅縮短。In an embodiment, the first branch portion of the first electrode includes periodic protrusions, for example. The first branch portion of the first electrode and the second branch portion of the second electrode cause a change in horizontal distance due to the protrusion. The electric field formed by one electrode and the second electrode can divide the liquid crystal layer in the display into four liquid crystal operating regions with horizontal electric fields of different directions, and can drive and restore the liquid crystal molecules of adjacent liquid crystal operating regions to substantially By adjusting to the same direction, the reaction time of liquid crystal molecules is greatly shortened.

圖5是依照本發明的一實施例的一種畫素結構500的上視示意圖。在此必須說明的是,圖5的實施例沿用圖4的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 5 is a schematic top view of a pixel structure 500 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 5 inherits the component numbers and parts of the embodiment of FIG. 4, wherein the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖5的畫素結構500與圖4的畫素結構400的差異在於:畫素結構500的第一電極550的幾何結構及凸起與畫素結構400的第一電極450的幾何結構及凸起具有不同的形狀。The pixel structure 500 in FIG. 5 is different from the pixel structure 400 in FIG. 4 in that: the geometric structure and protrusions of the first electrode 550 of the pixel structure 500 and the geometric structure and protrusions of the first electrode 450 of the pixel structure 400 Has different shapes.

在本實施例中,第一電極550包括第一分支部553,第一分支部553的幾何結構554A以及幾何結構554B為半圓形。幾何結構554A以及幾何結構554B位於第一主幹部552A與第一主幹部552B之間,第一延伸部556位於幾何結構554A以及幾何結構554B之間,且第一延伸部556連接於對應的幾何結構554A以及幾何結構554B之間。In this embodiment, the first electrode 550 includes a first branch portion 553, and the geometric structure 554A and the geometric structure 554B of the first branch portion 553 are semicircular. The geometric structure 554A and the geometric structure 554B are located between the first trunk portion 552A and the first trunk portion 552B, the first extension portion 556 is located between the geometric structure 554A and the geometric structure 554B, and the first extension portion 556 is connected to the corresponding geometric structure Between 554A and geometry 554B.

第一電極550的凸起558A、凸起558B、凸起558C、凸起558D、凸起558E以及凸起558F的形狀包括半圓形,且凸起558A、凸起558B、凸起558C、凸起558D、凸起558E以及凸起558F的底部與第一延伸部556連接。凸起558A、凸起558B、凸起558C、凸起558D、凸起558E以及凸起558F分別朝向鄰近之另一個第二延伸部556。在本發明一實施例中,凸起558A、凸起558C以及凸起558E設置於第二延伸部556的一側,凸起558B、凸起558D以及凸起558F設置於第二延伸部556的另一側,且凸起558A、凸起558C以及凸起558E分別與凸起558B、凸起558D以及凸起558F的頂點互相對齊,舉例來說,凸起558A的頂點與凸起558B的頂點之連線實質上可垂直於第二延伸部556的延伸方向、凸起558C的頂點與凸起558D的頂點之連線實質上可垂直於第二延伸部556的延伸方向、凸起558E的頂點與凸起558F的頂點之連線實質上可垂直於第二延伸部556的延伸方向。The shape of the protrusion 558A, the protrusion 558B, the protrusion 558C, the protrusion 558D, the protrusion 558E, and the protrusion 558F of the first electrode 550 includes a semicircle, and the protrusion 558A, the protrusion 558B, the protrusion 558C, and the protrusion The bottoms of 558D, protrusion 558E, and protrusion 558F are connected to the first extension portion 556. The protrusion 558A, the protrusion 558B, the protrusion 558C, the protrusion 558D, the protrusion 558E, and the protrusion 558F respectively face another adjacent second extension portion 556. In an embodiment of the present invention, the protrusion 558A, the protrusion 558C, and the protrusion 558E are disposed on one side of the second extension 556, and the protrusion 558B, the protrusion 558D, and the protrusion 558F are disposed on the other of the second extension 556. One side, and the protrusions 558A, 558C, and 558E are aligned with the vertices of the protrusions 558B, 558D, and 558F, respectively. For example, the apex of the protrusion 558A is connected to the apex of the protrusion 558B. The line may be substantially perpendicular to the extension direction of the second extension 556, the line connecting the apex of the protrusion 558C and the apex of the protrusion 558D may be substantially perpendicular to the extension direction of the second extension 556, the apex of the protrusion 558E, and the protrusion The connecting line of the apex of the first 558F may be substantially perpendicular to the extending direction of the second extending portion 556.

在本實施例中,幾何結構554A、幾何結構554B、凸起558A、凸起558B、凸起558C、凸起558D、凸起558E以及凸起558F的形狀包括半圓形,然而本發明不限於此。在其他實施例中,幾何結構與凸起的形狀還可以包括半橢圓形。In this embodiment, the shapes of the geometric structure 554A, the geometric structure 554B, the protrusion 558A, the protrusion 558B, the protrusion 558C, the protrusion 558D, the protrusion 558E, and the protrusion 558F include a semicircle, but the present invention is not limited thereto . In other embodiments, the geometric structure and the convex shape may further include a semi-oval shape.

圖6是依照本發明的一實施例的一種畫素結構600的上視示意圖。在此必須說明的是,圖6的實施例沿用圖4的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 6 is a schematic top view of a pixel structure 600 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 6 inherits the component numbers and parts of the embodiment of FIG. 4, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖6的畫素結構600與圖4的畫素結構400的差異在於:畫素結構600的第一電極650與畫素結構400的第一電極450具有不同的形狀。The difference between the pixel structure 600 of FIG. 6 and the pixel structure 400 of FIG. 4 is that the first electrode 650 of the pixel structure 600 and the first electrode 450 of the pixel structure 400 have different shapes.

在本發明一實施例中,第一電極650包括第一分支部653,第一分支部653的幾何結構654A以及幾何結構654B各自包括兩個相對應的曲面,且兩個相對應的曲面的凹面分別朝向凸起的外側。舉例而言,幾何結構654A包括相對應的側壁SW5以及側壁SW6,側壁SW5以及側壁SW6為兩個相對應的曲面,且側壁SW5以及側壁SW6的凹面朝向幾何結構654A的外側。幾何結構654A以及幾何結構654B位於第一主幹部652A與第一主幹部652B之間,第一延伸部656位於幾何結構654A以及幾何結構654B之間,且第一延伸部656連接於對應的幾何結構654A以及幾何結構654B之間。In an embodiment of the present invention, the first electrode 650 includes a first branch portion 653, and the geometric structure 654A and the geometric structure 654B of the first branch portion 653 each include two corresponding curved surfaces, and the concave surfaces of the two corresponding curved surfaces. Toward the outer sides of the protrusions, respectively. For example, the geometric structure 654A includes corresponding sidewalls SW5 and SW6. The sidewalls SW5 and SW6 are two corresponding curved surfaces, and the concave surfaces of the sidewalls SW5 and SW6 face outward of the geometric structure 654A. The geometric structure 654A and the geometric structure 654B are located between the first trunk portion 652A and the first trunk portion 652B, the first extension portion 656 is located between the geometric structure 654A and the geometric structure 654B, and the first extension portion 656 is connected to the corresponding geometric structure Between 654A and geometry 654B.

第一電極650的凸起658A、凸起658B、凸起658C、凸起658D、凸起658E以及凸起658F的形狀包括釘形,且凸起658A、凸起658B、凸起658C、凸起658D、凸起658E以及凸起658F的底部與第一延伸部656連接。凸起658A、凸起658B、凸起658C、凸起658D、凸起658E以及凸起658F分別朝向鄰近之另一個第二延伸部656。在本實施例中,凸起各自包括兩個相對應的曲面,且兩個相對應的曲面的凹面分別朝向凸起的外側。舉例而言,凸起658A包括相對應的側壁SW7以及側壁SW8,側壁SW7以及側壁SW8為兩個相對應的曲面,且側壁SW7以及側壁SW8的凹面朝向凸起658A的外側。在本發明一實施例中,凸起658A、凸起658C以及凸起658E分別與凸起658B、凸起658D以及凸起658F對應地設置於第二延伸部656的兩側,且凸起658A、凸起658C以及凸起658E分別與凸起658B、凸起658D以及凸起658F的頂點互相對齊。The shapes of the protrusions 658A, 658B, protrusions 658C, protrusions 658D, protrusions 658E, and protrusions 658F of the first electrode 650 include a nail shape, and the protrusions 658A, protrusions 658B, protrusions 658C, and protrusions 658D The bottoms of the protrusions 658E and 658F are connected to the first extension 656. The protrusion 658A, the protrusion 658B, the protrusion 658C, the protrusion 658D, the protrusion 658E, and the protrusion 658F respectively face another adjacent second extension portion 656. In this embodiment, each of the protrusions includes two corresponding curved surfaces, and the concave surfaces of the two corresponding curved surfaces respectively face the outer sides of the protrusions. For example, the protrusion 658A includes corresponding side walls SW7 and SW8, the side walls SW7 and SW8 are two corresponding curved surfaces, and the concave surfaces of the side walls SW7 and SW8 face outward of the protrusion 658A. In an embodiment of the present invention, the protrusions 658A, 658C, and 658E are respectively disposed on both sides of the second extension portion 656 corresponding to the protrusions 658B, 658D, and 658F, and the protrusions 658A, The protrusions 658C and 658E are aligned with the vertices of the protrusions 658B, 658D, and 658F, respectively.

圖7是依照本發明的一實施例的一種畫素結構700的上視示意圖。在此必須說明的是,圖7的實施例沿用圖2的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。FIG. 7 is a schematic top view of a pixel structure 700 according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 7 follows the component numbers and parts of the embodiment of FIG. 2, in which the same or similar reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

圖7的畫素結構700與圖2的畫素結構200的差異在於:畫素結構700的第一電極750與畫素結構200的第一電極250具有不同的形狀。The difference between the pixel structure 700 of FIG. 7 and the pixel structure 200 of FIG. 2 is that the first electrode 750 of the pixel structure 700 and the first electrode 250 of the pixel structure 200 have different shapes.

畫素結構700的第一電極750包括第一主幹部752A、第一主幹部752B、第一主幹部752C、第一分支部753A以及第一分支部753B。第一分支部753A位於第一主幹部752A與第一主幹部752B之間,且第一分支部753B位於第一主幹部752B與第一主幹部752C之間。在本實施例中,第一主幹部752B位於第二電極240的第二主幹部2421與第二主幹部2422之間,第二主幹部2421位於第一主幹部752A與第一主幹部752B之間,且第二主幹部2422位於第一主幹部752B與第一主幹部752C之間。在一實施例中,第一主幹部752A、第一主幹部752B、第一主幹部752C、第二主幹部2421以及第二主幹部2422沿掃描線之延伸方向D2交錯排列。The first electrode 750 of the pixel structure 700 includes a first trunk portion 752A, a first trunk portion 752B, a first trunk portion 752C, a first branch portion 753A, and a first branch portion 753B. The first branch portion 753A is located between the first trunk portion 752A and the first trunk portion 752B, and the first branch portion 753B is located between the first trunk portion 752B and the first trunk portion 752C. In this embodiment, the first trunk section 752B is located between the second trunk section 2421 and the second trunk section 2422 of the second electrode 240, and the second trunk section 2421 is located between the first trunk section 752A and the first trunk section 752B. The second trunk section 2422 is located between the first trunk section 752B and the first trunk section 752C. In one embodiment, the first trunk sections 752A, the first trunk sections 752B, the first trunk sections 752C, the second trunk sections 2421, and the second trunk sections 2422 are staggered along the extending direction D2 of the scanning line.

第一電極750的第一分支部753A包括第一延伸部756A、幾何結構754A以及幾何結構754B。幾何結構754A以及幾何結構754B位於第一主幹部752A與第一主幹部752B之間,且第一延伸部756A連接於對應的幾何結構754A以及幾何結構754B之間。幾何結構754A以及幾何結構754B在延伸方向D1上的寬度大於第一延伸部756A在延伸方向D1上的寬度,具體來說,遠離第一延伸部756A之幾何結構754A的一部份在延伸方向D1上的寬度以及遠離第一延伸部756A之幾何結構754B的一部份在延伸方向D1上的寬度均大於第一延伸部756A在延伸方向D1上的寬度。第一分支部753B包括第一延伸部756B、幾何結構754B’以及幾何結構754C。幾何結構754B’以及幾何結構754C位於第一主幹部752B與第一主幹部752C之間,且第一延伸部756B連接於對應的幾何結構754B’以及幾何結構754C之間。幾何結構754B’以及幾何結構754C在延伸方向D1上的寬度大於第一延伸部756在延伸方向D1上的寬度,具體來說,遠離第一延伸部756B之幾何結構754B’的一部份在延伸方向D1上的寬度以及遠離第一延伸部756B之幾何結構754C的一部份在延伸方向D1上的寬度均大於第一延伸部756B在延伸方向D1上的寬度。第一分支部753A與第一分支部753B對應地連接至第一主幹部752B的兩側。The first branch portion 753A of the first electrode 750 includes a first extension portion 756A, a geometric structure 754A, and a geometric structure 754B. The geometric structure 754A and the geometric structure 754B are located between the first trunk portion 752A and the first trunk portion 752B, and the first extension portion 756A is connected between the corresponding geometric structure 754A and the geometric structure 754B. The width of the geometric structure 754A and the geometric structure 754B in the extension direction D1 is greater than the width of the first extension 756A in the extension direction D1. Specifically, a part of the geometry 754A far from the first extension 756A is in the extension direction D1 The width in the extension direction D1 and a portion of the geometric structure 754B far from the first extension 756A in the extension direction D1 are larger than the width in the extension direction D1 of the first extension 756A. The first branch portion 753B includes a first extension portion 756B, a geometric structure 754B ', and a geometric structure 754C. The geometric structure 754B 'and the geometric structure 754C are located between the first trunk portion 752B and the first trunk portion 752C, and the first extension portion 756B is connected between the corresponding geometric structure 754B' and the geometric structure 754C. The width of the geometric structure 754B ′ and the geometric structure 754C in the extending direction D1 is greater than the width of the first extending portion 756 in the extending direction D1. Specifically, a part of the geometric structure 754B ′ far from the first extending portion 756B is extended. The width in the direction D1 and a portion of the geometric structure 754C far from the first extension 756B in the extension direction D1 are larger than the width of the first extension 756B in the extension direction D1. The first branch portion 753A is connected to both sides of the first trunk portion 752B in correspondence with the first branch portion 753B.

圖8A是依照本發明的一實施例的一種畫素結構800的上視示意圖。圖8B是圖8A中第二電極840的上視示意圖。圖8C是圖8A中第一電極850的上視示意圖。圖8A包括了兩個畫素結構800,圖8B包括了兩個第二電極840,且圖8C包括了兩個第一電極850,然而並非代表本發明必須同時形成兩個畫素結構、兩個第一電極或兩個第二電極。本發明的畫素結構、第一電極或第二電極亦可以依需求而一次形成一個或三個以上。FIG. 8A is a schematic top view of a pixel structure 800 according to an embodiment of the present invention. FIG. 8B is a schematic top view of the second electrode 840 in FIG. 8A. FIG. 8C is a schematic top view of the first electrode 850 in FIG. 8A. FIG. 8A includes two pixel structures 800, FIG. 8B includes two second electrodes 840, and FIG. 8C includes two first electrodes 850. However, this does not mean that the present invention must form two pixel structures, two First electrode or two second electrodes. The pixel structure, the first electrode, or the second electrode of the present invention may also be formed one or three or more at a time as required.

開關元件TFT2包括半導體層810、閘極822、汲極834和源極832。形成開關元件TFT2的方法例如包括於基底上形成半導體層810。在形成半導體層810之後,依序在半導體層810上形成閘絕緣層與閘極822和掃描線820,且閘極822與掃描線820電性連接。形成覆蓋閘極822的絕緣層。在絕緣層中形成開孔O4以及開孔O5。接著形成汲極834以及與資料線830電性連接的源極832,其中汲極834透過開孔O5而與半導體層810電性連接,且源極832透過開孔O4而與半導體層810電性連接。在本實施例中,開關元件TFT2的半導體層810的形狀為U形,然而本發明不限於此。在其他實施例中,開關元件的半導體層的形狀為L形或其他幾何形狀。在本實施例中,開關元件TFT2為頂閘極(Top gate)結構的薄膜電晶體,然而本發明不限於此。在其他實施例中,開關元件TFT2還可以是底閘極(Bottom gate)結構的薄膜電晶體。The switching element TFT2 includes a semiconductor layer 810, a gate electrode 822, a drain electrode 834, and a source electrode 832. A method of forming the switching element TFT2 includes, for example, forming a semiconductor layer 810 on a substrate. After the semiconductor layer 810 is formed, a gate insulating layer, a gate electrode 822 and a scan line 820 are sequentially formed on the semiconductor layer 810, and the gate electrode 822 and the scan line 820 are electrically connected. An insulating layer covering the gate electrode 822 is formed. Openings O4 and O5 are formed in the insulating layer. Next, a drain electrode 834 and a source electrode 832 electrically connected to the data line 830 are formed. The drain electrode 834 is electrically connected to the semiconductor layer 810 through the opening O5, and the source electrode 832 is electrically connected to the semiconductor layer 810 through the opening O4. connection. In this embodiment, the shape of the semiconductor layer 810 of the switching element TFT2 is U-shaped, but the present invention is not limited thereto. In other embodiments, the shape of the semiconductor layer of the switching element is L-shaped or other geometric shapes. In this embodiment, the switching element TFT2 is a thin film transistor with a top gate structure, but the present invention is not limited thereto. In other embodiments, the switching element TFT2 may also be a thin film transistor with a bottom gate structure.

請同時參考圖8A及圖8C,第一電極850包括第一主幹部852A、第一主幹部852B以及多個第一分支部853。第一主幹部852A與第一主幹部852B實質上平行於資料線830之延伸方向D3。在本實施例中,第一主幹部852A與第一主幹部852B可以分別與不同排的部分資料線830完全重疊,然而本發明不限於此。在其他實施例中,部分的第一主幹部852A與部分的資料線830重疊,且部分的第一主幹部852B與部分的另一條資料線830重疊。在其他實施例中,第一主幹部852A與第一主幹部852B互相靠近,並且完全不與資料線830重疊。8A and 8C, the first electrode 850 includes a first trunk portion 852A, a first trunk portion 852B, and a plurality of first branch portions 853. The first trunk section 852A and the first trunk section 852B are substantially parallel to the extending direction D3 of the data line 830. In this embodiment, the first trunk section 852A and the first trunk section 852B may completely overlap with the partial data lines 830 of different rows, respectively, but the present invention is not limited thereto. In other embodiments, a portion of the first trunk portion 852A overlaps with a portion of the data line 830, and a portion of the first trunk portion 852B overlaps with a portion of the other data line 830. In other embodiments, the first trunk section 852A and the first trunk section 852B are close to each other and do not overlap the data line 830 at all.

第一電極850的第一分支部853位於第一主幹部852A與第一主幹部852B之間。第一分支部853中之每一者包括第一延伸部856、幾何結構854A以及幾何結構854B。幾何結構854A以及幾何結構854B位於第一主幹部852A與第一主幹部852B之間,且第一延伸部856位於幾何結構854A以及幾何結構854B之間,且第一延伸部856連接於對應的幾何結構854A以及幾何結構854B之間。幾何結構854A以及幾何結構854B在資料線830的延伸方向D3上的寬度大於第一延伸部856在延伸方向D3上的寬度,具體來說,遠離第一延伸部856之幾何結構854A的一部份在延伸方向D3上的寬度以及遠離第一延伸部856之幾何結構854B的一部份在延伸方向D3上的寬度均大於第一延伸部856在延伸方向D3上的寬度。在一實施例中,幾何結構854A以及幾何結構854B的形狀為梯形,且幾何結構854A以及幾何結構854B最寬的底部分別與第一主幹部852A以及第一主幹部852B連接,而幾何結構854A的側壁SW9以及幾何結構854B的側壁SW10與資料線830之延伸方向D3之間的銳角夾角為大於或等於30度且小於90度,然而本發明不限於此。在其他實施例中,幾何結構可以是在延伸方向D3上的寬度大於第一延伸部856的其他幾何形狀。在一實施例中,第一電極850的幾何結構854A以及幾何結構854B分別與第二電極840的梯形結構844B以及梯形結構844A具有類似或同樣的形狀。在一實施例中,第一延伸部856的形狀為長方形,且第一延伸部856之線寬為0.5微米至5微米。The first branch portion 853 of the first electrode 850 is located between the first trunk portion 852A and the first trunk portion 852B. Each of the first branch portions 853 includes a first extension portion 856, a geometric structure 854A, and a geometric structure 854B. The geometric structure 854A and the geometric structure 854B are located between the first trunk portion 852A and the first trunk portion 852B, and the first extension portion 856 is located between the geometric structure 854A and the geometric structure 854B, and the first extension portion 856 is connected to the corresponding geometry Between structure 854A and geometry 854B. The width of the geometric structure 854A and the geometric structure 854B in the extension direction D3 of the data line 830 is larger than the width of the first extension 856 in the extension direction D3. Specifically, a part of the geometry 854A far from the first extension 856 The width in the extending direction D3 and a portion of the geometric structure 854B far from the first extending portion 856 in the extending direction D3 are larger than the width of the first extending portion 856 in the extending direction D3. In one embodiment, the shapes of the geometric structures 854A and 854B are trapezoidal, and the widest bottoms of the geometric structures 854A and 854B are connected to the first trunk portion 852A and the first trunk portion 852B, respectively. The acute angle between the side wall SW9 and the side wall SW10 of the geometric structure 854B and the extending direction D3 of the data line 830 is greater than or equal to 30 degrees and less than 90 degrees, but the present invention is not limited thereto. In other embodiments, the geometric structure may be other geometric shapes having a width in the extending direction D3 that is larger than the first extending portion 856. In an embodiment, the geometrical structure 854A and the geometrical structure 854B of the first electrode 850 have similar or identical shapes to the trapezoidal structure 844B and the trapezoidal structure 844A of the second electrode 840, respectively. In one embodiment, the shape of the first extension portion 856 is rectangular, and the line width of the first extension portion 856 is 0.5 μm to 5 μm.

在本實施例中,第一電極850還包括連接部851A,連接部851A將第一主幹部852A以及第一主幹部852B連接,連接部851A的面積舉例係大於第一分支部853的面積,連接部851A的位置舉例係位於多個第一分支部853的一側,然而本發明不限於此。在其他實施例中,第一電極850的第一主幹部852A以及第一主幹部852B只會藉由第一分支部853而連接。在本實施例中,開關元件TFT2的源極832以及汲極834完全與第一電極850重疊,亦即與連接部851A完全重疊,然而本發明不限於此。在其他實施例中,開關元件TFT2的源極832以及汲極834可以只有部分與第一電極850重疊。在其他實施例中,開關元件TFT2的源極832以及汲極834可以完全不與第一電極850重疊。In this embodiment, the first electrode 850 further includes a connecting portion 851A. The connecting portion 851A connects the first trunk portion 852A and the first trunk portion 852B. The area of the connection portion 851A is larger than the area of the first branch portion 853. An example of the position of the portion 851A is located on one side of the plurality of first branch portions 853, but the present invention is not limited thereto. In other embodiments, the first trunk portion 852A and the first trunk portion 852B of the first electrode 850 are only connected by the first branch portion 853. In this embodiment, the source electrode 832 and the drain electrode 834 of the switching element TFT2 completely overlap the first electrode 850, that is, completely overlap the connection portion 851A. However, the present invention is not limited thereto. In other embodiments, the source electrode 832 and the drain electrode 834 of the switching element TFT2 may only partially overlap the first electrode 850. In other embodiments, the source 832 and the drain 834 of the switching element TFT2 may not overlap the first electrode 850 at all.

畫素結構800中的第二電極840與開關元件TFT2之間隔有絕緣層,且第二電極840與開關元件TFT2的汲極834透過絕緣層中的開口O6而電性連接。An insulating layer is provided between the second electrode 840 and the switching element TFT2 in the pixel structure 800, and the second electrode 840 and the drain electrode 834 of the switching element TFT2 are electrically connected through the opening O6 in the insulating layer.

第二電極840與第一電極850分離。請同時參考圖8A以及圖8B,第二電極840包括第二主幹部842、第二分支部843A以及第二分支部843B。第二主幹部842、第二分支部843A以及第二分支部843B位於第一電極850的第一主幹部852A以及第一主幹部852B之間,且第二主幹部842實質上平行於延伸方向D3。第二分支部843A以及第二分支部843B分別從第二主幹部842延伸,且第二分支部843A以及第二分支部843B對應地連接至第二主幹部842的兩側。第二分支部843A包括第二延伸部846A以及梯形結構844A。梯形結構844A連接於第二主幹部842與對應的第二延伸部846A之間。第二分支部843B包括第二延伸部846B以及梯形結構844B。梯形結構844B連接於第二主幹部842與對應的第二延伸部846B之間。第二分支部843A以及第二分支部843B分別與第一分支部853沿著延伸方向D3交錯排列。The second electrode 840 is separated from the first electrode 850. 8A and 8B, the second electrode 840 includes a second trunk portion 842, a second branch portion 843A, and a second branch portion 843B. The second trunk portion 842, the second branch portion 843A, and the second branch portion 843B are located between the first trunk portion 852A and the first trunk portion 852B of the first electrode 850, and the second trunk portion 842 is substantially parallel to the extending direction D3 . The second branch portion 843A and the second branch portion 843B extend from the second trunk portion 842, respectively, and the second branch portion 843A and the second branch portion 843B are correspondingly connected to both sides of the second trunk portion 842. The second branch portion 843A includes a second extension portion 846A and a trapezoidal structure 844A. The ladder structure 844A is connected between the second trunk portion 842 and the corresponding second extension portion 846A. The second branch portion 843B includes a second extension portion 846B and a trapezoidal structure 844B. The ladder structure 844B is connected between the second trunk portion 842 and the corresponding second extension portion 846B. The second branch portions 843A and the second branch portions 843B and the first branch portions 853 are staggered along the extending direction D3, respectively.

在本實施例中,第二延伸部846A與第二延伸部846B的形狀為梯形,然而本發明不限於此。在其他實施例中,第二延伸部846A與第二延伸部846B的形狀為矩形。在一實施例中,第二延伸部846A的側壁SW11以及第二延伸部846B的側壁SW12與資料線830之延伸方向D3之間的銳角夾角為大於或等於30度且小於90度,並能藉由調整夾角的大小以進一步縮短液晶的反應時間。In this embodiment, the shapes of the second extending portion 846A and the second extending portion 846B are trapezoidal, but the present invention is not limited thereto. In other embodiments, the shapes of the second extending portion 846A and the second extending portion 846B are rectangular. In an embodiment, the acute angle between the side wall SW11 of the second extension 846A and the side wall SW12 of the second extension 846B and the extension direction D3 of the data line 830 is greater than or equal to 30 degrees and less than 90 degrees, and can be borrowed. The size of the included angle is adjusted to further shorten the response time of the liquid crystal.

圖9A是依照本發明的一實施例的一種畫素結構900的上視示意圖。圖9B是圖9A中第一電極950的上視示意圖。圖9A包括了兩個畫素結構900,且圖9B包括了兩個第一電極950,然而並非代表本發明必須同時形成兩個畫素結構、兩個第一電極或兩個第二電極。本發明的畫素結構、第一電極或第二電極亦可以依需求而一次形成一個或三個以上。FIG. 9A is a schematic top view of a pixel structure 900 according to an embodiment of the present invention. FIG. 9B is a schematic top view of the first electrode 950 in FIG. 9A. FIG. 9A includes two pixel structures 900 and FIG. 9B includes two first electrodes 950. However, this does not mean that the present invention must form two pixel structures, two first electrodes, or two second electrodes at the same time. The pixel structure, the first electrode, or the second electrode of the present invention may also be formed one or three or more at a time as required.

在此必須說明的是,圖9A的實施例沿用圖8A的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。圖9A的畫素結構900與圖8A的畫素結構800的差異在於:畫素結構900的第一電極950與畫素結構800的第一電極850有不同的形狀。It must be noted here that the embodiment of FIG. 9A follows the component numbers and parts of the embodiment of FIG. 8A, in which the same or similar reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated. The difference between the pixel structure 900 of FIG. 9A and the pixel structure 800 of FIG. 8A is that the first electrode 950 of the pixel structure 900 and the first electrode 850 of the pixel structure 800 have different shapes.

第一電極950包括第一主幹部952A、第一主幹部952B以及多個第一分支部953。第一主幹部952A與第一主幹部952B實質上平行於資料線830之延伸方向D3。在本實施例中,第一主幹部952A與第一主幹部952B可以分別與不同排的部分資料線830完全重疊,然而本發明不限於此。在其他實施例中,部分的第一主幹部952A與部分的資料線830重疊,且部分的第一主幹部952B與部分的另一條資料線830重疊。在其他實施例中,第一主幹部952A與第一主幹部952B互相靠近,並且完全不與資料線830重疊。The first electrode 950 includes a first trunk portion 952A, a first trunk portion 952B, and a plurality of first branch portions 953. The first trunk section 952A and the first trunk section 952B are substantially parallel to the extending direction D3 of the data line 830. In this embodiment, the first trunk section 952A and the first trunk section 952B may completely overlap with the partial data lines 830 of different rows, respectively, but the present invention is not limited thereto. In other embodiments, a portion of the first trunk portion 952A overlaps with a portion of the data line 830, and a portion of the first trunk portion 952B overlaps with a portion of another data line 830. In other embodiments, the first trunk section 952A and the first trunk section 952B are close to each other and do not overlap the data line 830 at all.

第一電極950的第一分支部953位於第一主幹部952A與第一主幹部952B之間。第一分支部953中之每一者包括第一延伸部956A、第一延伸部956B、幾何結構954A以及幾何結構954B,。幾何結構954A以及幾何結構954B位於第一主幹部952A與第一主幹部952B之間。第一延伸部956A與第一延伸部956B位於幾何結構954A以及幾何結構954B之間,第一延伸部956A與第一延伸部956B分別連接對應的幾何結構954A以及幾何結構954B,且第一延伸部956A與第一延伸部956B兩者至少於第二電極840的第二主幹部842處分離。幾何結構954A以及幾何結構954B在延伸方向D3上的寬度大於第一延伸部956在延伸方向D3上的寬度,具體來說,遠離第一延伸部956A之幾何結構954A的一部份在延伸方向D3上的寬度大於第一延伸部956A在延伸方向D3上的寬度,遠離第一延伸部956B之幾何結構954B的一部份在延伸方向D3上的寬度大於第一延伸部956B在延伸方向D3上的寬度。在一實施例中,幾何結構954A以及幾何結構954B的形狀為梯形,且幾何結構954A以及幾何結構954B最寬的底部分別與第一主幹部952A以及第一主幹部952B連接,而幾何結構954A的側壁SW13以及幾何結構954B的側壁SW14與資料線830之延伸方向D3之間的銳角夾角為大於或等於30度且小於90度,然而本發明不限於此。在其他實施例中,幾何結構可以是在延伸方向D3上的寬度大於第一延伸部956A與第一延伸部956B的其他幾何形狀。The first branch portion 953 of the first electrode 950 is located between the first trunk portion 952A and the first trunk portion 952B. Each of the first branch portions 953 includes a first extension 956A, a first extension 956B, a geometric structure 954A, and a geometric structure 954B. The geometric structure 954A and the geometric structure 954B are located between the first trunk portion 952A and the first trunk portion 952B. The first extension 956A and the first extension 956B are located between the geometric structure 954A and the geometric structure 954B. The first extension 956A and the first extension 956B respectively connect the corresponding geometric structure 954A and the geometric structure 954B, and the first extension Both 956A and the first extension 956B are separated at least from the second trunk portion 842 of the second electrode 840. The width of the geometric structure 954A and the geometric structure 954B in the extending direction D3 is larger than the width of the first extending portion 956 in the extending direction D3. Specifically, a part of the geometric structure 954A far from the first extending portion 956A is in the extending direction D3. The width of the first extension portion 956A in the extension direction D3 is greater than that of a portion of the geometric structure 954B far from the first extension portion 956B in the extension direction D3 is greater than that of the first extension portion 956B in the extension direction D3. width. In an embodiment, the shapes of the geometric structures 954A and 954B are trapezoidal, and the widest bottoms of the geometric structures 954A and 954B are connected to the first trunk portion 952A and the first trunk portion 952B, respectively. The acute angle between the sidewall SW13 and the sidewall SW14 of the geometric structure 954B and the extending direction D3 of the data line 830 is greater than or equal to 30 degrees and less than 90 degrees, but the present invention is not limited thereto. In other embodiments, the geometric structure may be other geometric shapes whose width in the extending direction D3 is larger than the first extending portion 956A and the first extending portion 956B.

在本實施例中,第一電極950還包括連接部951A,連接部951A將第一主幹部952A以及第一主幹部952B連接,連接部951A的面積舉例係大於第一分支部953的面積,然而本發明不限於此。在本實施例中,開關元件TFT2的源極832以及汲極834完全與第一電極950重疊,亦即與連接部951A完全重疊,然而本發明不限於此。在其他實施例中,開關元件TFT2的源極832以及汲極834可以只有部分與第一電極950重疊。在其他實施例中,開關元件TFT2的源極832以及汲極834可以完全不與第一電極950重疊。In this embodiment, the first electrode 950 further includes a connection portion 951A, which connects the first trunk portion 952A and the first trunk portion 952B. The area of the connection portion 951A is, for example, larger than the area of the first branch portion 953. However, The invention is not limited to this. In this embodiment, the source electrode 832 and the drain electrode 834 of the switching element TFT2 completely overlap the first electrode 950, that is, completely overlap the connection portion 951A. However, the present invention is not limited thereto. In other embodiments, the source 832 and the drain 834 of the switching element TFT2 may only partially overlap the first electrode 950. In other embodiments, the source 832 and the drain 834 of the switching element TFT2 may not overlap the first electrode 950 at all.

圖9C是沿圖9A剖線AA’的剖面示意圖。在本實施例中,閘極822與半導體層810之間夾有閘絕緣層812以及閘絕緣層814,且閘極822與汲極834之間有絕緣層824以及絕緣層826,開孔O5位於閘絕緣層812、閘絕緣層814、絕緣層824以及絕緣層826之中,而汲極834與半導體層810藉由開孔O5而電性連接。汲極834與第二電極840之間夾有絕緣層836,開孔O6位於絕緣層836之中,而汲極834與第二電極840藉由開孔O6而電性連接。第一電極950與第二電極840中間隔有絕緣層845,且第一電極950與第二電極840分離。在其他實施例中,前述的絕緣層或閘絕緣層亦可以應實際需求而增加或減少層數。Fig. 9C is a schematic cross-sectional view taken along line AA 'of Fig. 9A. In this embodiment, a gate insulating layer 812 and a gate insulating layer 814 are sandwiched between the gate electrode 822 and the semiconductor layer 810, and an insulating layer 824 and an insulating layer 826 are located between the gate electrode 822 and the drain electrode 834. The opening O5 is located at Among the gate insulating layer 812, the gate insulating layer 814, the insulating layer 824, and the insulating layer 826, the drain electrode 834 and the semiconductor layer 810 are electrically connected through the opening O5. An insulating layer 836 is sandwiched between the drain electrode 834 and the second electrode 840. The opening O6 is located in the insulating layer 836, and the drain electrode 834 and the second electrode 840 are electrically connected through the opening O6. An insulating layer 845 is spaced between the first electrode 950 and the second electrode 840, and the first electrode 950 is separated from the second electrode 840. In other embodiments, the foregoing insulation layer or gate insulation layer may be increased or decreased in number according to actual needs.

圖10A是依照本發明的一實施例的一種畫素結構1000的上視示意圖。圖10B是沿圖10A剖線BB’的剖面示意圖。圖10A包括了兩個畫素結構1000,然而並非代表本發明必須同時形成兩個畫素結構。本發明的畫素結構亦可以依需求而一次形成一個或三個以上。FIG. 10A is a schematic top view of a pixel structure 1000 according to an embodiment of the present invention. Fig. 10B is a schematic cross-sectional view taken along the line BB 'of Fig. 10A. FIG. 10A includes two pixel structures 1000, but it does not mean that the present invention must form two pixel structures at the same time. The pixel structure of the present invention can also be formed one or three or more at a time as required.

在此必須說明的是,圖10A的實施例沿用圖9A的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。圖10A的畫素結構1000與圖9A的畫素結構900的差異在於:畫素結構900的第二電極840與開關元件TFT2的汲極834並非同時形成的,然而畫素結構1000的第二電極1040與開關元件TFT3的汲極1034為同時形成的。It must be noted here that the embodiment of FIG. 10A inherits the component numbers and parts of the embodiment of FIG. 9A, in which the same or similar reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated. The difference between the pixel structure 1000 of FIG. 10A and the pixel structure 900 of FIG. 9A is that the second electrode 840 of the pixel structure 900 and the drain electrode 834 of the switching element TFT2 are not formed at the same time, but the second electrode of the pixel structure 1000 is 1040 is formed simultaneously with the drain electrode 1034 of the switching element TFT3.

請參考圖10B,在本實施例中,開關元件TFT3包括半導體層810、閘極822、源極832以及汲極1034。在一實施例中,第二電極1040與汲極1034是屬於同一個膜層,且第二電極1040與汲極1034兩者同時形成。因此,能縮短製程所需的時間並減小畫素結構的厚度。在本發明一實施例中,第二電極、資料線以及汲極皆屬於同一膜層。Please refer to FIG. 10B. In this embodiment, the switching element TFT3 includes a semiconductor layer 810, a gate electrode 822, a source electrode 832, and a drain electrode 1034. In one embodiment, the second electrode 1040 and the drain electrode 1034 belong to the same film layer, and both the second electrode 1040 and the drain electrode 1034 are formed at the same time. Therefore, the time required for the process can be shortened and the thickness of the pixel structure can be reduced. In one embodiment of the present invention, the second electrode, the data line, and the drain electrode all belong to the same film layer.

綜上所述,本發明畫素結構中的第一電極包括至少兩條第一主幹部以及多個第一分支部,第二電極包括至少一條第二主幹部以及至少兩個第二分支部,且第一分支部與第二分支部沿資料線之延伸方向交錯排列。因此,第一電極與第二電極所形成的電場能使液晶具有較短的反應時間,進而使液晶效率提升。第一電極的第一分支部包括幾何結構,第二電極的第二分支部包括梯形結構。In summary, the first electrode in the pixel structure of the present invention includes at least two first trunk portions and a plurality of first branch portions, and the second electrode includes at least one second trunk portion and at least two second branch portions. The first branch portions and the second branch portions are staggered along the extending direction of the data line. Therefore, the electric field formed by the first electrode and the second electrode can make the liquid crystal have a short reaction time, thereby further improving the liquid crystal efficiency. The first branch portion of the first electrode includes a geometric structure, and the second branch portion of the second electrode includes a trapezoidal structure.

圖11A是依照本發明的一實施例的一種畫素結構1100的上視示意圖。圖11B是圖11A中第二電極1140的上視示意圖。圖11C是圖11A中第一電極1150的上視示意圖。圖11A包括了兩個畫素結構1100,圖11B包括了兩個第二電極1140,且圖11C包括了兩個第一電極1150,然而並非代表本發明必須同時形成兩個畫素結構、兩個第一電極或兩個第二電極。本發明的畫素結構、第一電極或第二電極亦可以依需求而一次形成一個或三個以上。FIG. 11A is a schematic top view of a pixel structure 1100 according to an embodiment of the present invention. FIG. 11B is a schematic top view of the second electrode 1140 in FIG. 11A. FIG. 11C is a schematic top view of the first electrode 1150 in FIG. 11A. FIG. 11A includes two pixel structures 1100, FIG. 11B includes two second electrodes 1140, and FIG. 11C includes two first electrodes 1150. However, this does not mean that the present invention must form two pixel structures, two First electrode or two second electrodes. The pixel structure, the first electrode, or the second electrode of the present invention may also be formed one or three or more at a time as required.

在此必須說明的是,圖11A的實施例沿用圖8A的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。It must be noted here that the embodiment of FIG. 11A follows the component numbers and parts of the embodiment of FIG. 8A, in which the same or similar reference numerals are used to indicate the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments are not repeated.

請參考圖11A及圖11C,畫素結構1100的第一電極1150包括第一主幹部1152、第一分支部1153A以及第一分支部1153B。第一主幹部1152實質上平行於延伸方向D3。第一分支部1153A以及第一分支部1153B分別從第一主幹部1152延伸,且第一分支部1153A以及第一分支部1153B對應地連接至第一主幹部1152的兩側。第一分支部1153A包括第一延伸部1156A以及第一梯形結構1154A。第一梯形結構1154A連接於第一主幹部1152與對應的第一延伸部1156A之間。第一分支部1153B包括第一延伸部1156B以及第一梯形結構1154B。第一梯形結構1154B連接於第一主幹部1152與對應的第一延伸部1156B之間。Please refer to FIGS. 11A and 11C. The first electrode 1150 of the pixel structure 1100 includes a first trunk portion 1152, a first branch portion 1153A, and a first branch portion 1153B. The first trunk portion 1152 is substantially parallel to the extending direction D3. The first branch portion 1153A and the first branch portion 1153B respectively extend from the first trunk portion 1152, and the first branch portion 1153A and the first branch portion 1153B are correspondingly connected to both sides of the first trunk portion 1152. The first branch portion 1153A includes a first extension portion 1156A and a first trapezoidal structure 1154A. The first trapezoidal structure 1154A is connected between the first trunk portion 1152 and the corresponding first extension portion 1156A. The first branch portion 1153B includes a first extension portion 1156B and a first trapezoidal structure 1154B. The first trapezoidal structure 1154B is connected between the first trunk portion 1152 and the corresponding first extension portion 1156B.

請參考圖11A及圖11B,第二電極1140包括第二主幹部1142、第二分支部1143A以及第二分支部1143B。第二主幹部1142實質上平行於延伸方向D3。第二主幹部1142與第一主幹部1152重疊。第二分支部1143A以及第二分支部1143B分別從第二主幹部1142延伸,且第二分支部1143A以及第二分支部1143B對應地連接至第二主幹部1142的兩側。第二分支部1143A包括第二延伸部1146A以及第二梯形結構1144A。第二梯形結構1144A連接於第二主幹部1142與對應的第二延伸部1146A之間。第二分支部1143B包括第二延伸部1146B以及第二梯形結構1144B。第二梯形結構1144B連接於第二主幹部1142與對應的第二延伸部1146B之間。第一分支部1153A以及第一分支部1153B分別與第二分支部1143A以及第二分支部1143B沿資料線的延伸方向D3交錯排列。在本發明一實施例中,第一電極與第二電極組成樹狀結構或魚骨狀結構,如圖11A所示。11A and 11B, the second electrode 1140 includes a second trunk portion 1142, a second branch portion 1143A, and a second branch portion 1143B. The second trunk portion 1142 is substantially parallel to the extending direction D3. The second trunk section 1142 overlaps the first trunk section 1152. The second branch portion 1143A and the second branch portion 1143B respectively extend from the second trunk portion 1142, and the second branch portion 1143A and the second branch portion 1143B are correspondingly connected to both sides of the second trunk portion 1142. The second branch portion 1143A includes a second extension portion 1146A and a second trapezoidal structure 1144A. The second trapezoidal structure 1144A is connected between the second trunk portion 1142 and the corresponding second extension portion 1146A. The second branch portion 1143B includes a second extension portion 1146B and a second trapezoidal structure 1144B. The second trapezoidal structure 1144B is connected between the second trunk portion 1142 and the corresponding second extension portion 1146B. The first branch portion 1153A and the first branch portion 1153B are staggered with the second branch portion 1143A and the second branch portion 1143B along the extension direction D3 of the data line, respectively. In an embodiment of the present invention, the first electrode and the second electrode form a tree structure or a fishbone structure, as shown in FIG. 11A.

在本實施例中,第一電極1150為共用電極,且第二電極1140為畫素電極,然而本發明不限於此。在其他實施例中,第一電極為畫素電極,且第二電極為共用電極。在本實施例中,第一延伸部1156A與第一延伸部1156B的形狀為梯形,然而本發明不限於此。在其他實施例中,第一延伸部1156A與第一延伸部1156B的形狀為矩形。在一實施例中,第一延伸部1156A的側壁SW15與資料線之延伸方向D3之間構成的銳角夾角為大於或等於30度且小於90度,第一延伸部1156B的側壁SW16與資料線之延伸方向D3之間構成的銳角夾角為大於或等於30度且小於90度。在一實施例中,第一梯形結構1154A的側壁SW17與資料線之延伸方向D3之間的銳角夾角為30度至60度,第一梯形結構1154B的側壁SW18與資料線之延伸方向D3之間的銳角夾角為30度至60度。在本實施例中,第一電極1150的第一分支部1153A、1153B分別與第二電極的第二分支部1143A、1143B具有相同的形狀,然而本發明不限於此。在其他實施例中,第一電極1150的第一分支部1153A、1153B分別與第二電極的第二分支部1143A、1143B具有不同的形狀。In this embodiment, the first electrode 1150 is a common electrode and the second electrode 1140 is a pixel electrode, but the present invention is not limited thereto. In other embodiments, the first electrode is a pixel electrode, and the second electrode is a common electrode. In this embodiment, the shapes of the first extension portion 1156A and the first extension portion 1156B are trapezoidal, but the present invention is not limited thereto. In other embodiments, the shapes of the first extension portion 1156A and the first extension portion 1156B are rectangular. In an embodiment, the acute angle between the side wall SW15 of the first extension 1156A and the extension direction D3 of the data line is greater than or equal to 30 degrees and less than 90 degrees. The side wall SW16 of the first extension 1156B and the data line The acute angle formed between the extending directions D3 is greater than or equal to 30 degrees and less than 90 degrees. In an embodiment, the acute angle between the side wall SW17 of the first trapezoidal structure 1154A and the extending direction D3 of the data line is 30 degrees to 60 degrees, and between the side wall SW18 of the first trapezoidal structure 1154B and the extending direction D3 of the data line The acute angle is between 30 and 60 degrees. In this embodiment, the first branch portions 1153A, 1153B of the first electrode 1150 have the same shape as the second branch portions 1143A, 1143B of the second electrode, but the present invention is not limited thereto. In other embodiments, the first branch portions 1153A, 1153B of the first electrode 1150 and the second branch portions 1143A, 1143B of the second electrode have different shapes, respectively.

綜上所述,畫素結構中的共用電極包括第一主幹部以及至少兩個第一分支部,畫素電極包括第二主幹部以及至少兩個第二分支部,且第一分支部與第二分支部沿資料線的延伸方向交錯排列。因此,共用電極與畫素電極所形成的電場能使液晶具有較短的反應時間,進而使液晶效率提升。To sum up, the common electrode in the pixel structure includes a first trunk portion and at least two first branch portions, the pixel electrode includes a second trunk portion and at least two second branch portions, and the first branch portion and the first branch portion The two branches are staggered along the extending direction of the data line. Therefore, the electric field formed by the common electrode and the pixel electrode can make the liquid crystal have a short reaction time, thereby further improving the liquid crystal efficiency.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100、200、300、400、500、600、700、800、900、1000、1100‧‧‧畫素結構100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1100‧‧‧ pixel structure

110、810‧‧‧半導體層110, 810‧‧‧ semiconductor layer

120、820‧‧‧掃描線120, 820‧‧‧scan line

122、822‧‧‧閘極122, 822‧‧‧Gate

130、830‧‧‧資料線130, 830‧‧‧ data line

132、832‧‧‧源極132, 832‧‧‧Source

134、834、1034‧‧‧汲極134, 834, 1034‧‧‧ Drain

140、240、340、440、840、1040、1140‧‧‧第二電極140, 240, 340, 440, 840, 1040, 1140‧‧‧ second electrode

142、2421、2422、3421、3422、3423、4421、4422、4423、4424、842、1142‧‧‧第二主幹部142, 2421, 2422, 3421, 3422, 3423, 4421, 4422, 4423, 4424, 842, 1142

143A、143B、2431A、2431B、2432A、2432B、3431A、3431B、3432A、3432B、3433A、3433B、4431A、4431B、4432A、4432B、4433A、4433B、4434A、4434B、843A、843B、1143A、1143B‧‧‧第二分支部143A, 143B, 2431A, 2431B, 2432A, 2432B, 3431A, 3431B, 3432A, 3432B, 3433A, 3433B, 4431A, 4431B, 4432A, 4332B, 4433A, 4433B, 4434A, 4434B, 843A, 843B, 1443A, 1433B Second branch

144A、144B、2441A、2441B、2442A、2442B、3441A、3441B、3442A、3442B、3443A、3443B、4441A、4441B、4442A、4442B、4443A、4443B、4444A、4444B、844A、844B、1144A、1144B‧‧‧梯形結構144A, 144B, 2441A, 2441B, 2442A, 2442B, 3441A, 3441B, 3442A, 3442B, 3443A, 3443B, 4441A, 4441B, 4442A, 4442B, 4443A, 4443B, 4444A, 4444B, 844A, 844B, 1144A, 1144B Trapezoidal structure

146A、146B、2461A、2461B、2462A、2462B、3461A、3461B、3462A、3462B、3463A、3463B、4461A、4461B、4462A、4462B、4463A、4463B、4464A、4464B、846A、846B、1146A、1146B‧‧‧第二延伸部146A, 146B, 2461A, 2461B, 2462A, 2462B, 3461A, 3461B, 3462A, 3462B, 3463A, 3463B, 4461A, 4461B, 4462A, 4462B, 4463A, 4463B, 4464A, 4464B, 846A, 846B, 1146A, 1146B Second extension

150、250、350、450、550、650、750、850、950、1150‧‧‧第一電極150, 250, 350, 450, 550, 650, 750, 850, 950, 1150‧‧‧ first electrode

151A、151B、851A、951A‧‧‧連接部151A, 151B, 851A, 951A

152A、152B、252A、252B、352A、352B、452A、452B、552A、552B、652A、652B、752A、752B、752C、852A、852B、952A、952B、1152‧‧‧第一主幹部152A, 152B, 252A, 252B, 352A, 352B, 452A, 452B, 552A, 552B, 652A, 652B, 752A, 752B, 752C, 852A, 852B, 952A, 952B, 1152 ...

153、253、353、453、553、653、753A、753B、753C、853、953、1153A、1153B‧‧‧第一分支部153, 253, 353, 453, 553, 653, 753A, 753B, 753C, 853, 953, 1153A, 1153B ‧‧‧ First branch

154A、154B、254A、254B、354A、354B、454A、454B、554A、554B、654A、654B、754A、754B、754B’、754C、854A、854B、954A、954B、1154A、1154B‧‧‧幾何結構154A, 154B, 254A, 254B, 354A, 354B, 454A, 454B, 554A, 554B, 654A, 654B, 754A, 754B, 754B ’, 754C, 854A, 854B, 954A, 954B, 1154A, 1154B ‧ ‧ geometric structure

156、256、356、456、556、656、756A、756B、856、956A、956B、1156A、1156B‧‧‧第一延伸部156, 256, 356, 456, 556, 656, 756A, 756B, 856, 956A, 956B, 1156A, 1156B‧‧‧ First extension

258A、258B、358A、358B、358C、358D、458A、458B、458C、458D、458E、458F、558A、558B、558C、558D、558E、558F、658A、658B、658C、658D、658E、658F‧‧‧凸起258A, 258B, 358A, 358B, 358C, 358D, 458A, 458B, 458C, 458D, 458E, 458F, 558A, 558B, 558C, 558D, 558E, 558F, 658A, 658B, 658C, 658D, 658E, 658F ‧‧‧ Raised

824、826、836、845‧‧‧絕緣層824, 826, 836, 845‧‧‧ Insulation

812、814‧‧‧閘絕緣層812, 814‧‧‧ Gate insulation

D1、D2、D3‧‧‧延伸方向D1, D2, D3 ‧‧‧ extension direction

SW1、SW2、SW3、SW4、SW5、SW6、SW7、SW8、SW9、SW10、SW11、SW12、SW13、SW14、SW15、SW16、SW17、SW18‧‧‧側壁SW1, SW2, SW3, SW4, SW5, SW6, SW7, SW8, SW9, SW10, SW11, SW12, SW13, SW14, SW15, SW16, SW17, SW18 ...

O1、O2、O3、O4、O5、O6‧‧‧開孔O1, O2, O3, O4, O5, O6

TFT1、TFT2、TFT3‧‧‧開關元件TFT1, TFT2, TFT3‧‧‧ switching element

圖1是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖2是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖3是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖4是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖5是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖6是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖7是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖8A是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖8B是圖8A中第二電極的上視示意圖。 圖8C是圖8A中第一電極的上視示意圖。 圖9A是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖9B是圖9A中第一電極的上視示意圖。 圖9C是沿圖9A剖線AA’的剖面示意圖。 圖10A是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖10B是沿圖10A剖線BB’的剖面示意圖。 圖11A是依照本發明的一實施例的一種畫素結構的上視示意圖。 圖11B是圖11A中第二電極的上視示意圖。 圖11C是圖11A中第一電極的上視示意圖。FIG. 1 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 2 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 3 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 4 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 5 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 6 is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 7 is a schematic top view of a pixel structure according to an embodiment of the present invention. 8A is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 8B is a schematic top view of the second electrode in FIG. 8A. FIG. 8C is a schematic top view of the first electrode in FIG. 8A. FIG. 9A is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 9B is a schematic top view of the first electrode in FIG. 9A. Fig. 9C is a schematic cross-sectional view taken along line AA 'of Fig. 9A. FIG. 10A is a schematic top view of a pixel structure according to an embodiment of the present invention. Fig. 10B is a schematic cross-sectional view taken along the line BB 'of Fig. 10A. 11A is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 11B is a schematic top view of the second electrode in FIG. 11A. FIG. 11C is a schematic top view of the first electrode in FIG. 11A.

Claims (17)

一種畫素結構,包括: 一掃描線與一資料線; 一開關元件,和該掃描線以及該資料線電性連接; 一第一電極,包括: 至少兩條第一主幹部,實質上平行於該資料線之一延伸方向;以及 多個第一分支部,該些第一分支部中之每一者包括: 至少一第一延伸部;以及 至少兩個幾何結構,位於該兩條第一主幹部之間,且該第一延伸部位於對應的該兩個幾何結構之間,其中該兩個幾何結構在該延伸方向上的寬度大於該第一延伸部在該延伸方向上的寬度;以及 一第二電極,與該第一電極分離,其中該第一電極與該第二電極之中的一者和該開關元件電性連接,該第二電極包括: 至少一條第二主幹部,位於該兩條第一主幹部之間,且實質上平行於該資料線之該延伸方向;以及 至少兩個第二分支部,從該第二主幹部延伸,其中該至少兩個第二分支部分別對應地連接至該第二主幹部的兩側,且該至少兩個第二分支部中之至少一者包括: 至少一第二延伸部;以及 至少一梯形結構,連接於該第二主幹部與對應的該第二延伸部之間,其中該些第一分支部與該些第二分支部沿該資料線之該延伸方向交錯排列。A pixel structure includes: a scanning line and a data line; a switching element electrically connected to the scanning line and the data line; a first electrode including: at least two first trunk portions, substantially parallel to An extension direction of one of the data lines; and a plurality of first branch portions, each of the first branch portions including: at least one first extension portion; and at least two geometric structures located on the two first main portions Between the stems, and the first extension is located between the corresponding two geometric structures, wherein the width of the two geometric structures in the extension direction is greater than the width of the first extension in the extension direction; and A second electrode is separated from the first electrode, wherein one of the first electrode and the second electrode is electrically connected to the switching element, and the second electrode includes: at least one second trunk portion located between the two electrodes; Between the first trunk sections and substantially parallel to the extending direction of the data line; and at least two second branch sections extending from the second trunk section, wherein the at least two second branch sections respectively correspond to Connected to both sides of the second trunk portion, and at least one of the at least two second branch portions includes: at least a second extension portion; and at least one ladder structure connected to the second trunk portion and the corresponding Between the second extension portions, the first branch portions and the second branch portions are staggered along the extension direction of the data line. 如申請專利範圍第1項所述的畫素結構,其中該第一電極與一共用電壓電性連接,且該第二電極與該開關元件電性連接。The pixel structure according to item 1 of the scope of patent application, wherein the first electrode is electrically connected to a common voltage, and the second electrode is electrically connected to the switching element. 如申請專利範圍第1項所述的畫素結構,其中該至少兩個幾何結構的形狀包括梯形。The pixel structure according to item 1 of the patent application scope, wherein the shape of the at least two geometric structures includes a trapezoid. 如申請專利範圍第1項所述的畫素結構,其中: 該第一電極的該些第一分支部中之每一者包括: 至少兩個第一延伸部,該至少兩個第一延伸部分別連接於對應的兩個該幾何結構,且該至少兩個第一延伸部於該第二主幹部處分離。The pixel structure according to item 1 of the patent application scope, wherein: each of the first branch portions of the first electrode includes: at least two first extension portions, the at least two first extension portions Do not connect to two corresponding geometric structures, and the at least two first extensions are separated at the second trunk portion. 如申請專利範圍第1項所述的畫素結構,其中該第二電極的該些第二分支部位於該兩條第一主幹部之間。The pixel structure according to item 1 of the patent application scope, wherein the second branch portions of the second electrode are located between the two first trunk portions. 如申請專利範圍第1項所述的畫素結構,其中該第二電極的該些第二分支部分別延伸至該第一電極的該兩條第一主幹部的下方。The pixel structure according to item 1 of the scope of patent application, wherein the second branch portions of the second electrode respectively extend below the two first trunk portions of the first electrode. 如申請專利範圍第6項所述的畫素結構,其中: 該第一電極包括: 至少三條該第一主幹部,且該些第一分支部分別位於對應的兩條該第一主幹部之間; 該第二電極包括: 至少兩條該第二主幹部,分別位於對應的兩條該第一主幹部之間;以及 至少四個該第二分支部,分別位於每一該兩條第二主幹部的兩側,其中至少兩個該第二分支部位於該兩條第二主幹部之間,且互相連接於對應的該兩條第二主幹部之間。The pixel structure according to item 6 of the patent application scope, wherein: the first electrode includes: at least three first trunk sections, and the first branch sections are respectively located between corresponding two first trunk sections The second electrode includes: at least two of the second main sections, which are respectively located between the corresponding two of the first main sections; and at least four of the second branch sections, which are respectively located in each of the two second main sections On both sides of the cadres, at least two of the second branch sections are located between the two second trunk sections and are connected to each other between the corresponding two second trunk sections. 如申請專利範圍第1項所述的畫素結構,其中: 該第二電極包括至少兩條第二主幹部;且 該第一電極的每一該第一延伸部連接於對應的該至少兩個該幾何結構之間,且該些第一延伸部中之至少一個包括多個凸起,位於該第二電極的該兩條第二主幹部之間。The pixel structure according to item 1 of the scope of patent application, wherein: the second electrode includes at least two second trunk portions; and each of the first extension portions of the first electrode is connected to the corresponding at least two Between the geometric structures, and at least one of the first extensions includes a plurality of protrusions, located between the two second trunk portions of the second electrode. 如申請專利範圍第8項所述的畫素結構,其中該第一電極的該些凸起的形狀包括三角形、半圓形或是釘形。The pixel structure according to item 8 of the scope of patent application, wherein the shapes of the protrusions of the first electrode include a triangle, a semicircle, or a nail. 如申請專利範圍第8項所述的畫素結構,其中該第一電極的該些凸起包括三角形,且該些凸起的頂部角度為60度至150度,且該些凸起係分別朝向鄰近之該第二延伸部。The pixel structure according to item 8 of the scope of patent application, wherein the protrusions of the first electrode include a triangle, and the top angle of the protrusions is 60 degrees to 150 degrees, and the protrusions are respectively facing Adjacent to the second extension. 如申請專利範圍第1項所述的畫素結構,其中該第二電極與該資料線屬於同一膜層。The pixel structure according to item 1 of the scope of patent application, wherein the second electrode and the data line belong to the same film layer. 如申請專利範圍第1項所述的畫素結構,其中該些第一延伸部的形狀為梯形或矩形,且該些第一延伸部的側壁與該資料線之該延伸方向之間的夾角大於或等於30度且小於90度。The pixel structure according to item 1 of the scope of patent application, wherein the shapes of the first extensions are trapezoidal or rectangular, and the angle between the sidewalls of the first extensions and the extension direction of the data line is greater than Or equal to 30 degrees and less than 90 degrees. 如申請專利範圍第1項所述的畫素結構,其中該些第一延伸部的形狀為長方形,且該些第一延伸部之線寬為0.5至5微米。The pixel structure according to item 1 of the scope of patent application, wherein the shapes of the first extensions are rectangular, and the line width of the first extensions is 0.5 to 5 microns. 如申請專利範圍第1項所述的畫素結構,其中該些幾何結構的形狀為梯形,且該些幾何結構的側壁與該資料線之該延伸方向之間的夾角大於或等於30度且小於90度。The pixel structure according to item 1 of the scope of patent application, wherein the shapes of the geometric structures are trapezoidal, and the angle between the sidewalls of the geometric structures and the extension direction of the data line is greater than or equal to 30 degrees and less 90 degrees. 一種畫素結構,包括: 一掃描線與一資料線; 一開關元件,和該掃描線以及該資料線電性連接; 一共用電極,包括: 一第一主幹部,實質上平行於該資料線之一延伸方向;以及 至少兩個第一分支部,從該第一主幹部延伸,該至少兩個第一分支部分別對應地連接至該第一主幹部的兩側,且該至少兩個第一分支部中之至少一者包括: 至少一第一延伸部;以及 至少一第一梯形結構,連接於該第一主幹部與對應的該第一延伸部之間;以及 一畫素電極,與該共用電極分離,並和該開關元件電性連接,其中該畫素電極包括: 一第二主幹部,與該第一主幹部重疊;以及 至少兩個第二分支部,從該第二主幹部延伸,該至少兩個第二分支部分別對應地連接至該第二主幹部的兩側,且該至少兩個第二分支部中之至少一者包括: 至少一第二延伸部;以及 至少一第二梯形結構,連接於該第二主幹部與對應的該第二延伸部之間, 其中該些第一分支部與該些第二分支部沿該資料線的該延伸方向交錯排列。A pixel structure includes: a scanning line and a data line; a switching element electrically connected to the scanning line and the data line; a common electrode including: a first trunk portion substantially parallel to the data line One extending direction; and at least two first branch portions extending from the first trunk portion, the at least two first branch portions correspondingly connected to both sides of the first trunk portion, and the at least two first branch portions At least one of a branch portion includes: at least one first extension portion; and at least one first trapezoidal structure connected between the first trunk portion and the corresponding first extension portion; and a pixel electrode, and The common electrode is separated and electrically connected to the switching element, wherein the pixel electrode includes: a second trunk section overlapping with the first trunk section; and at least two second branch sections from the second trunk section Extending, the at least two second branch portions are correspondingly connected to both sides of the second trunk portion, and at least one of the at least two second branch portions includes: at least one second extension portion; and at least one First A ladder structure, connected between the second extending portion and the second main portion corresponding to, wherein the plurality of first branch portions and the plurality of second branch portions are staggered along the extending direction of the data line. 如申請專利範圍第15項所述的畫素結構,其中該些第一延伸部的形狀為梯形或矩形,且該些第一延伸部的側壁與該資料線之該延伸方向之間的夾角為大於或等於30度且小於90度。The pixel structure according to item 15 of the scope of patent application, wherein the shapes of the first extensions are trapezoidal or rectangular, and the angle between the sidewalls of the first extensions and the extension direction of the data line is 30 degrees or more and less than 90 degrees. 如申請專利範圍第15項所述的畫素結構,其中該些第一梯形結構的側壁與該資料線之該延伸方向之間的夾角為30度至60度。The pixel structure according to item 15 of the scope of the patent application, wherein the angle between the sidewalls of the first trapezoidal structures and the extending direction of the data line is 30 degrees to 60 degrees.
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