TW201829839A - Electromagnetic wave shield coating method - Google Patents

Electromagnetic wave shield coating method Download PDF

Info

Publication number
TW201829839A
TW201829839A TW107103903A TW107103903A TW201829839A TW 201829839 A TW201829839 A TW 201829839A TW 107103903 A TW107103903 A TW 107103903A TW 107103903 A TW107103903 A TW 107103903A TW 201829839 A TW201829839 A TW 201829839A
Authority
TW
Taiwan
Prior art keywords
electronic component
electromagnetic wave
wave shielding
coating method
metal ink
Prior art date
Application number
TW107103903A
Other languages
Chinese (zh)
Other versions
TWI676711B (en
Inventor
鄭光春
韓美敬
金旻熙
成俊基
Original Assignee
南韓商印可得股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商印可得股份有限公司 filed Critical 南韓商印可得股份有限公司
Publication of TW201829839A publication Critical patent/TW201829839A/en
Application granted granted Critical
Publication of TWI676711B publication Critical patent/TWI676711B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/18Processes for applying liquids or other fluent materials performed by dipping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/002Pretreatement
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/007After-treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073Shielding materials
    • H05K9/0081Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0092Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising electro-conductive pigments, e.g. paint, ink, tampon printing

Abstract

The present invention relates to a method for forming a coating that blocks electromagnetic waves, characterized by comprising: a loading step of attaching a surface of an electronic element to a transfer carrier; a dipping step of dipping the electronic element attached to the transfer carrier into a containing tank in which metal ink is contained such that the metal ink is applied to the exposed outer surface of the electronic element; a sintering step of hardening the metal ink applied to the electronic element; and an unloading step of separating the electronic device from the transfer carrier.

Description

電磁波遮蔽之塗層方法Coating method for electromagnetic wave shielding

本發明涉及一種電磁波遮蔽之塗層方法,更為詳細地,涉及一種如下的電磁波遮蔽之塗層方法,該方法的特徵在於,透過將電子元件表面浸漬(dipping)到金屬油墨中,在電子元件表面上形成電磁波遮蔽膜。The present invention relates to a coating method for electromagnetic wave shielding, and more particularly, to a coating method for electromagnetic wave shielding, which is characterized in that, by dipping the surface of an electronic component into metallic ink, the electronic component An electromagnetic wave shielding film is formed on the surface.

最近,電子電氣工業和資訊通信技術的快速發展對人類生活提供了許多便利和滋潤。但是,除了這些優點以外還產生多種副作用,其中之一就是由此產生的電磁波的有害性。從生活家電設備、資訊通訊設備及工業設備等中產生的電磁波與設備之間的電磁波干擾(EMI,electromagnetic interference)一起對人體帶來危害,因此引發新的環境問題。此外,隨著電子及資訊通訊設備的高速化和寬頻化的加速,手機、筆記本電腦及個人可攜式資訊終端(PDA,personal digital assistant)等資訊通訊設備以及日常生活用品等實現了小型化、薄型化及輕量化,由此導致EMI問題更為嚴重,因此可以說迫切需要用於解決這一問題的技術開發。Recently, the rapid development of the electrical and electronic industry and information and communication technologies have provided many conveniences and nourishment to human life. However, in addition to these advantages, there are various side effects, one of which is the harmfulness of the resulting electromagnetic waves. The electromagnetic waves generated from household electrical appliances, information communication equipment, and industrial equipment, together with the electromagnetic interference (EMI) between the devices, are harmful to the human body, and therefore cause new environmental problems. In addition, with the acceleration of electronic and information communication equipment and the acceleration of broadband, information communication equipment such as mobile phones, notebook computers, personal digital assistants (PDAs), and daily necessities have been miniaturized, Thinning and lightening have caused the EMI problem to be more serious, so it can be said that there is an urgent need for technology development to solve this problem.

一般來講,在半導體元件製程中的封裝製程中,將製作後的半導體晶片由絕緣性樹脂來成型,從而將其在外部環境中保護。而成品電子元件在操作時會產生電磁波,或者反過來受到周邊產生的電磁波的影響而產生錯誤,從而可能會產生電子設備嚴重的缺陷。Generally speaking, in the packaging process in the semiconductor device process, the fabricated semiconductor wafer is molded with an insulating resin to protect it in an external environment. The finished electronic components will generate electromagnetic waves during operation, or in turn be affected by the electromagnetic waves generated by the surroundings to produce errors, which may cause serious defects in electronic equipment.

作為用於解決此問題的另一方案,有一種方法在電子元件表面或樹脂成型外表面上透過乾式或濕式形成電子波遮蔽膜。As another solution for solving this problem, there is a method of forming an electron wave shielding film on the surface of an electronic component or on the outer surface of a resin molding through dry or wet methods.

乾式方法普遍採用透過濺射方式來形成電磁波遮蔽膜的方法。在濺射方式中,濺射設備不但相當昂貴,而且需要較長時間進行濺射,因此具有效率較低的問題。而且在濺射製程的特性上,具有上面和側面很難以均勻的厚度來形成金屬層的缺點,因此需要進一步增加用於彌補所述缺點的機械製程裝置。為了解決如上所述的問題,在韓國專利公報KR10-1686318B1(2016年12月7日)中公開有一種用於在上面和側面均勻地形成電磁波遮蔽膜的方法及裝置。The dry method generally adopts a method of forming an electromagnetic wave shielding film through a sputtering method. In the sputtering method, the sputtering equipment is not only quite expensive, but also takes a long time to perform sputtering, so it has a problem of low efficiency. Moreover, in terms of the characteristics of the sputtering process, it has the disadvantage that it is difficult to form a metal layer with a uniform thickness on the top and sides, so it is necessary to further increase the mechanical process device to compensate for the disadvantages. In order to solve the problems described above, a method and apparatus for uniformly forming an electromagnetic wave shielding film on the top and sides are disclosed in Korean Patent Publication KR10-1686318B1 (December 7, 2016).

濕式方法中較普遍的是噴射方式,其雖然比濺射方式在生產效率方面上較優異,但其具有如下的問題:因其結構特性上不易對電子元件的整體表面特別對電子元件的側面進行噴射,並且在噴射過程中產生的粉塵會導致油墨材料的浪費和半導體淨化室內污染。此外,與前述的濺射製程同樣,在噴射過程中難以在上面和側面塗覆用於形成電磁波遮蔽膜的均勻厚度的金屬層。The spray method is more common in the wet method. Although it is superior to the sputtering method in terms of production efficiency, it has the following problems: because of its structural characteristics, it is not easy to affect the entire surface of the electronic component, especially the side of the electronic component. The spraying is carried out, and the dust generated during the spraying process causes waste of ink materials and pollution in the semiconductor purification room. In addition, as with the aforementioned sputtering process, it is difficult to apply a uniform thickness metal layer for forming an electromagnetic wave shielding film on the upper and side surfaces during the spraying process.

除此之外還有鍍覆方式,但鍍覆方式中由於金屬層和樹脂的附著力較弱,因此在韓國專利公報第10-0839930號(2008年6月20日)中公開有一種用於產生粗糙度的額外前處理製程的說明。但是,在鍍覆製程中採用的鍍覆液劑在環境安全層面上具有需要特別管理及處理的缺點。In addition, there is a plating method, but in the plating method, since the adhesion between the metal layer and the resin is weak, Korean Patent Gazette No. 10-0839930 (June 20, 2008) discloses a method for Description of the additional pretreatment process that produces roughness. However, the plating solution used in the plating process has the disadvantage of requiring special management and handling in terms of environmental safety.

最重要的是,在電子元件的整體表面中只在除安裝面(PCB面)以外的必要遮蔽區域上形成電磁波遮蔽膜,所述濺射方式、噴射方式及鍍覆方式均產生金屬遮蔽膜形成在無需電磁波遮蔽的區域的問題。為了防止該問題,例如可使用膠帶來掩蔽無需遮蔽的安裝面,但是隨著金屬遮蔽膜也塗覆到膠帶上,當卸載(unloading)電子元件時,金屬遮蔽膜上會產生裂紋,根本上不能執行電磁波遮蔽功能,因此為了防止這種缺陷,還要求進一步的預切割(precutting)製程。The most important thing is that the electromagnetic wave shielding film is formed only on the necessary shielding area except the mounting surface (PCB surface) on the entire surface of the electronic component. The sputtering method, spraying method and plating method all produce a metal shielding film formation Problems in areas where electromagnetic waves are not required. To prevent this problem, for example, tape can be used to mask the mounting surface that does not need to be masked. However, as the metal masking film is also applied to the tape, when unloading electronic components, the metal masking film will have cracks, which cannot be used at all. The electromagnetic wave shielding function is performed. Therefore, in order to prevent such defects, a further precutting process is required.

專利文獻0001:KR10-1686318B1(2016年12月7日)。Patent Document 0001: KR10-1686318B1 (December 7, 2016).

專利文獻0002:KR10-0839930B1(2008年6月20日)。Patent document 0002: KR10-0839930B1 (June 20, 2008).

因此,本發明是為了解決如上所述之以往問題而提出的,其目的在於提供一種電磁波遮蔽之塗層方法,該電磁波遮蔽之塗層方法透過將電子元件的暴露表面浸漬在金屬油墨中,從而能夠在電子元件表面上形成均勻厚度的電磁波遮蔽膜。Therefore, the present invention is proposed to solve the above-mentioned conventional problems, and its object is to provide a coating method for electromagnetic wave shielding by dipping the exposed surface of an electronic component in a metallic ink, thereby An electromagnetic wave shielding film with a uniform thickness can be formed on the surface of the electronic component.

所述目的透過本發明的電磁波遮蔽之塗層方法來實現,該方法包括:加載步驟,將電子元件的一面附著在輸送載體上;浸漬步驟,將附著於該輸送載體上的電子元件浸漬(dipping)在收容有金屬油墨的收容槽中,從而在電子元件的暴露的外表面上塗覆金屬油墨;燒成步驟,對塗覆於該電子元件上的金屬油墨進行固化;及卸載步驟,從該輸送載體中分離電子元件。The object is achieved by the electromagnetic wave shielding coating method of the present invention. The method includes: a loading step, attaching one side of the electronic component to the transport carrier; and a dipping step, dipping the electronic component attached to the transport carrier ) In the containing tank containing the metal ink, the metal ink is coated on the exposed outer surface of the electronic component; the firing step solidifies the metal ink coated on the electronic component; and the unloading step, from the conveyance The electronic component is separated from the carrier.

在此,較佳地在該浸漬步驟之前,進一步執行對附著於輸送載體上的電子元件的暴露表面上賦予親水性的表面處理步驟。Here, preferably, prior to the impregnation step, a surface treatment step of imparting hydrophilicity to the exposed surface of the electronic component attached to the carrier is further performed.

此外,較佳地在該表面處理步驟中對電子元件表面進行等離子體處理。In addition, it is preferable to perform plasma treatment on the surface of the electronic component in this surface treatment step.

此外,較佳地該輸送載體的電子元件附著面具有疏水性。In addition, preferably, the electronic component attachment surface of the carrier has hydrophobicity.

此外,較佳地在該燒成步驟之前,進一步執行對塗覆於電子元件表面上的金屬油墨的塗覆厚度進行勻化的整平步驟。In addition, preferably, before the firing step, a leveling step of leveling the coating thickness of the metal ink applied on the surface of the electronic component is further performed.

此外,較佳地在該整平步驟中,採用刀片刮除在浸漬步驟中在電子元件表面上過量塗覆的金屬油墨,從而整平(leveling)成平坦狀。In addition, preferably in this leveling step, the metal ink excessively coated on the surface of the electronic component in the dipping step is scraped off with a blade, so that the leveling is flat.

此外,較佳地在該整平步驟中,採用由吸收材料構成的刀片吸收在浸漬步驟中在電子元件表面上過量塗覆的金屬油墨,從而整平(leveling)成平坦狀。In addition, preferably in this leveling step, a blade composed of an absorbing material is used to absorb the metal ink excessively coated on the surface of the electronic component in the dipping step, thereby leveling into a flat shape.

此外,較佳地在該浸漬步驟中,根據附著於輸送載體上的電子元件規格,控制電子元件的浸漬深度。In addition, preferably in this immersion step, the immersion depth of the electronic components is controlled according to the specifications of the electronic components attached to the transport carrier.

此外,較佳地該收容槽將金屬油墨的水位調整為與電子元件的厚度相同或比該厚度低的深度。In addition, it is preferable that the receiving tank adjusts the water level of the metal ink to a depth that is the same as or lower than the thickness of the electronic component.

此外,較佳地該輸送載體由輥對輥方式輸送的承載膜來構成,在承載膜的一側面上設置有粘貼部,該電子元件的一面能夠附著在該粘貼部。In addition, it is preferable that the conveyance carrier is composed of a carrier film conveyed in a roll-to-roll manner, and an adhesive part is provided on one side of the carrier film, and one side of the electronic component can be attached to the adhesive part.

此外,較佳地在該浸漬步驟中,採用在收容槽的上側受控升降的浸漬輥對輸送載體的附著有電子元件的表面的相反面向收容槽進行加壓,從而控制電子元件的浸漬深度。In addition, preferably, in this immersion step, an immersion roller that is controlled to move up and down on the upper side of the storage tank is used to pressurize the opposite side of the surface of the transport carrier to which the electronic component is attached to the storage tank to control the immersion depth of the electronic component.

此外,較佳地在該浸漬步驟中,吸收該收容槽中金屬油墨的浸漬輥旋轉的同時,對在浸漬輥的上側移動的電子元件外表面塗覆金屬油墨。In addition, preferably, in the immersion step, the immersion roller that absorbs the metallic ink in the storage tank rotates, and at the same time, the outer surface of the electronic component that moves on the upper side of the immersion roller is coated with the metallic ink.

本發明透過將電子元件表面浸漬在金屬油墨中,從而在電子元件表面上形成均勻厚度的電磁波遮蔽膜,因此能夠透過簡化的製程來提供優異的電磁波遮蔽效果。By immersing the surface of the electronic component in the metal ink, the invention forms an electromagnetic wave shielding film with a uniform thickness on the surface of the electronic component. Therefore, it can provide an excellent electromagnetic wave shielding effect through a simplified process.

此外,當透過以往濺射方法來形成電磁波遮蔽膜時,必須在濺射後進行去除形成於必要以上區域的電磁波遮蔽膜的附加製程,在此過程中,電磁波遮蔽膜上會產生裂紋,從而因裂紋而無法執行原來的電磁波遮蔽功能。與該以往方法不同,本發明在將電子元件的安裝面附著於輸送載體的粘貼部後,將電子元件的暴露表面浸漬在金屬油墨中,從而形成電磁波遮蔽膜,因此能夠防止在必要以上部分上形成電磁波遮蔽膜,由此能夠省略以往的用於去除部分電磁波遮蔽膜的附加製程,而且能夠防止產生電磁波遮蔽膜的裂紋。In addition, when the electromagnetic wave shielding film is formed by the conventional sputtering method, an additional process of removing the electromagnetic wave shielding film formed in the necessary area must be performed after sputtering. During this process, cracks may occur on the electromagnetic wave shielding film. Cracked and unable to perform the original electromagnetic wave shielding function. Unlike this conventional method, the present invention forms an electromagnetic wave shielding film by immersing the exposed surface of the electronic component in the metallic ink after attaching the mounting surface of the electronic component to the sticking portion of the carrier, and thus can prevent the above portion from being necessary By forming the electromagnetic wave shielding film, it is possible to omit the conventional additional process for removing part of the electromagnetic wave shielding film, and it is possible to prevent the occurrence of cracks in the electromagnetic wave shielding film.

下面,參照圖式對本發明的第一實施例的電磁波遮蔽之塗層方法進行詳細說明。Next, the electromagnetic wave shielding coating method of the first embodiment of the present invention will be described in detail with reference to the drawings.

圖1為根據本發明的第一實施例的電磁波遮蔽之塗層方法的製程順序圖,圖2為圖1的按步驟表示的製程圖,圖3為圖2中表示的收容槽的放大圖。1 is a process sequence diagram of an electromagnetic wave shielding coating method according to a first embodiment of the present invention, FIG. 2 is a process diagram shown in steps of FIG. 1, and FIG. 3 is an enlarged view of the receiving tank shown in FIG. 2.

如圖1所示,第一實施例的電磁波遮蔽之塗層方法包括加載步驟S10、浸漬步驟S20、整平步驟S30、燒成步驟S40及卸載步驟S50。As shown in FIG. 1, the electromagnetic wave shielding coating method of the first embodiment includes a loading step S10, a dipping step S20, a leveling step S30, a firing step S40, and an unloading step S50.

本實施例中將輸送載體10橫向移動的同時進行各製程為例進行說明。In this embodiment, a description will be given by taking each process while carrying the carrier 10 laterally as an example.

在該加載步驟S10中,如圖2的(a)所示,將電子元件D的安裝面(PCB面)緊貼於輸送載體10的粘貼部11後,施加壓力使電子元件D附著於輸送載體10的粘貼部11上。另外,可執行用於對該電子元件D的外表面賦予親水性的表面處理步驟,在這種表面處理步驟中,透過利用等離子體P的表面處理對電子元件D的表面賦予親水性,從而能夠增大金屬油墨M的附著力。In this loading step S10, as shown in FIG. 2(a), after the mounting surface (PCB surface) of the electronic component D is closely attached to the sticking portion 11 of the carrier 10, pressure is applied to attach the electronic component D to the carrier 10 on the pasting part 11. In addition, a surface treatment step for imparting hydrophilicity to the outer surface of the electronic component D may be performed. In this surface treatment step, the surface treatment of the electronic component D may be imparted with hydrophilicity by surface treatment using plasma P, thereby enabling Increase the adhesion of metallic ink M.

該浸漬步驟S20為,如圖2的(b)及(c)所示,將輸送載體10移動到收容有金屬油墨M的收容槽20的上部區域,且使附著於輸送載體10的粘貼部11上的電子元件D朝向位於輸送載體10的下部區域的收容槽20的狀態下,使輸送載體10朝向收容槽20進行下降,從而將電子元件D浸漬在金屬油墨M中。In this immersion step S20, as shown in (b) and (c) of FIG. 2, the transport carrier 10 is moved to the upper region of the storage tank 20 where the metal ink M is stored, and the sticking portion 11 attached to the transport carrier 10 is made With the electronic component D on the upper side facing the storage tank 20 located in the lower region of the transport carrier 10, the transport carrier 10 is lowered toward the storage tank 20 to immerse the electronic component D in the metal ink M.

在此的特徵在於,只在電子元件D的必要遮蔽區域上進行浸漬,作為具體例,需要在除了附著於粘貼部11上的電子元件D的安裝面以外的EMC(Epoxy Molding Compound)部分進行電磁波遮蔽,因此如圖2的(b)所示,可在積於收容槽20中的金屬油墨M的水位d2設定為低於電子元件D的側面高度d1的狀態下,只將電子元件D的上面和側面浸漬在金屬油墨M中而形成均勻厚度的電磁波遮蔽膜。The feature here is that the immersion is performed only on the necessary shielding area of the electronic component D. As a specific example, it is necessary to perform electromagnetic waves on the EMC (Epoxy Molding Compound) part other than the mounting surface of the electronic component D attached to the sticking portion 11 As shown in (b) of FIG. 2, only the upper surface of the electronic component D can be set in a state where the water level d2 of the metal ink M accumulated in the storage tank 20 is set lower than the side height d1 of the electronic component D The side surfaces are immersed in the metallic ink M to form a uniform thickness electromagnetic wave shielding film.

如前所述,最重要的是只在電子元件D的整體表面中除了安裝面以外的必要遮蔽區域上形成電磁波遮蔽膜,濺射方式、噴射方式等公知技術不易在需要遮蔽的電子元件D側面上形成均勻的電磁波遮蔽膜,且需要進行用於保護安裝面的額外掩蔽製程,並且在卸載過程中還需要伴隨用於防止電磁波遮蔽膜裂紋的額外製程。As mentioned above, the most important thing is to form an electromagnetic wave shielding film only on the entire shielding area of the entire surface of the electronic component D except for the mounting surface. It is not easy to use known techniques such as sputtering or spraying on the side of the electronic component D that needs to be shielded A uniform electromagnetic wave shielding film is formed thereon, and an additional masking process for protecting the mounting surface is required, and an additional process for preventing cracking of the electromagnetic wave shielding film is required during the unloading process.

但是,本實施例由於在電子元件D的安裝面緊貼於輸送載體10的粘貼部11的狀態下將其顛倒為安裝面的相反面(上面)朝向收容槽20後進行浸漬,因此能夠只在必要遮蔽區域上塗覆金屬油墨M。尤其在本實施例中,在以往技術中成為問題的電子元件D的安裝面粘貼於輸送載體10的粘貼部11上而不會暴露,因此能夠防止在安裝面上塗覆金屬油墨M,並且連電子元件D的側面一併塗覆金屬油墨M,因此能夠提供一體化的均勻厚度的電磁波遮蔽膜。因此,不會像以往那樣在必要以上區域上形成電磁波遮蔽膜,因此無需用於去除該必要以上區域上形成的電磁波遮蔽膜的額外製程,而且不會引發在這種去除製程中可能會產生的電磁波保護層的裂紋,且能夠防止電子元件D的安裝面受到用於形成電磁波遮蔽膜的金屬污染。However, in this embodiment, when the mounting surface of the electronic component D is in close contact with the attaching portion 11 of the carrier 10, it is reversed to the opposite surface (upper surface) of the mounting surface toward the storage tank 20 for immersion, so it can only be The metal ink M is coated on the necessary masking area. Especially in this embodiment, the mounting surface of the electronic component D, which has been a problem in the prior art, is pasted on the pasting portion 11 of the transport carrier 10 without being exposed, so it is possible to prevent the application of the metallic ink M on the mounting surface and the electronic The side surface of the element D is coated with the metal ink M at the same time, so it is possible to provide an integrated electromagnetic wave shielding film of uniform thickness. Therefore, the electromagnetic wave shielding film is not formed on the necessary area as in the past, so an additional process for removing the electromagnetic wave shielding film formed on the necessary area is not required, and there is no possibility of incurring such a removal process. The crack of the electromagnetic wave protective layer can prevent the mounting surface of the electronic component D from being contaminated by the metal used to form the electromagnetic wave shielding film.

另外,如圖3所示,收容槽20應保持在電子元件D的浸漬中所要求的金屬油墨M的水位,因此較佳地在收容槽20內部設置有水位調整裝置。更為詳細地,較佳構造為積於收容槽20中的金屬油墨M的水位d2應與電子元件D的側面高度d1相同或比該高度低,且根據電子元件D的規格能夠調整金屬油墨M的水位。此外,為了精確地調整收容槽20的金屬油墨M的水位,較佳地設置水位感測器21來按金屬油墨M的使用量規定地補充金屬油墨M,從而保持規定的水位,作為使用的水位感測器21可使用鐳射方式、超聲波方式、磁致伸縮(磁歪式)方式、頻率方式及浮游式感測器。另外,除了這種感測器以外,也可使用能夠檢測收容槽20內金屬油墨M水位的各種類型的感測器。In addition, as shown in FIG. 3, the storage tank 20 should maintain the water level of the metal ink M required for the immersion of the electronic component D. Therefore, a water level adjustment device is preferably provided inside the storage tank 20. In more detail, the preferred structure is that the water level d2 of the metal ink M accumulated in the storage tank 20 should be the same as or lower than the side height d1 of the electronic component D, and the metal ink M can be adjusted according to the specifications of the electronic component D Water level. In addition, in order to accurately adjust the water level of the metal ink M in the storage tank 20, it is preferable to provide a water level sensor 21 to replenish the metal ink M according to the amount of the metal ink M prescribed so as to maintain the predetermined water level as the used water level The sensor 21 can use a laser method, an ultrasonic method, a magnetostrictive (magnetic distortion) method, a frequency method, and a floating sensor. In addition to such sensors, various types of sensors capable of detecting the level of the metallic ink M in the storage tank 20 may be used.

為了與收容槽20的水位調整一起更為精確地控制電磁波遮蔽膜的均勻性,在浸漬時,較佳地設置有電子元件D的高度調整裝置和收容槽20的高度調整裝置中至少一個。In order to more accurately control the uniformity of the electromagnetic wave shielding film together with the adjustment of the water level of the storage tank 20, at least one of the height adjustment device of the electronic component D and the height adjustment device of the storage tank 20 is preferably provided during the immersion.

此外,作為用於供給金屬油墨M的供給裝置22可使用隔膜泵、管泵、活塞泵及齒輪泵,除此之外,也可使用能夠定量吐出金屬油墨M的各種種類的泵。當存儲於收容槽20中的金屬油墨M溢出(overflow)時,可透過水位感測器21感測金屬油墨M的水位,並調整收容槽20和電子元件D之間的間隔,或將收容槽20側壁的高度調整為低於電子元件D的側面高度,從而排出過量的金屬油墨M。此時排出的過量金屬油墨M可保存於儲罐23中,然後透過供給裝置22再向收容槽20供給。In addition, as the supply device 22 for supplying the metallic ink M, a diaphragm pump, a tube pump, a piston pump, and a gear pump may be used. In addition, various types of pumps capable of quantitatively discharging the metallic ink M may be used. When the metal ink M stored in the storage tank 20 overflows, the water level of the metal ink M can be sensed through the water level sensor 21, and the interval between the storage tank 20 and the electronic component D can be adjusted, or the storage tank The height of the side wall of 20 is adjusted to be lower than the height of the side of the electronic component D, so that excessive metal ink M is discharged. The excessive metal ink M discharged at this time can be stored in the storage tank 23 and then supplied to the storage tank 20 through the supply device 22.

作為在浸漬步驟S20中使用的金屬油墨M,只要是包含導電性金屬的金屬油墨M就都能使用,例如包含導電性金屬粒子的金屬油墨M及無粒子類型金屬油墨M均能使用,但並不局限於此。As the metal ink M used in the immersion step S20, any metal ink M containing conductive metal can be used. For example, the metal ink M containing conductive metal particles and the particle-free type metal ink M can be used. Not limited to this.

此外,作為金屬油墨M只要是具有導電性的金屬就能夠以多種方式應用,作為一例,可使用包含銀(Ag)的銀油墨。在金屬中,銀為能夠提供優異電磁波遮蔽效果的金屬,因此較佳使用銀油墨,但並不一定局限於此。除了其混合物以外,根據需要可包括溶劑、穩定劑、分散劑、粘合劑樹脂(binder resin)、交聯劑、還原劑、表面活性劑(surfactant)、潤濕劑(wetting agent)、觸變劑(thixotropic agent)或如流平劑(leveling agent)、增稠劑及消泡劑等的添加劑。In addition, as the metal ink M, as long as it is a conductive metal, it can be applied in various ways. As an example, a silver ink containing silver (Ag) may be used. Among metals, silver is a metal that can provide an excellent electromagnetic wave shielding effect, so silver ink is preferably used, but it is not necessarily limited to this. In addition to its mixture, it may include solvents, stabilizers, dispersants, binder resins, crosslinking agents, reducing agents, surfactants, wetting agents, thixotropy as needed Thixotropic agent or additives such as leveling agent, thickener and defoamer.

本發明的金屬油墨M組合物的黏度較佳為1~50000cPs,更加優選為5~400cPs。當黏度值過低時,因增加流動性難以在電子元件D上面和側面上形成均勻的電磁波遮蔽膜,當黏度值過高時,因流動性過少導致電磁波遮蔽膜的厚度不均勻,不能實現充分的燒成,從而會產生導電度、附著特性及外觀上的問題。The viscosity of the metallic ink M composition of the present invention is preferably 1 to 50000 cPs, and more preferably 5 to 400 cPs. When the viscosity value is too low, it is difficult to form a uniform electromagnetic wave shielding film on the top and sides of the electronic component D due to increased fluidity. When the viscosity value is too high, the thickness of the electromagnetic wave shielding film is uneven due to too little fluidity, which cannot be achieved sufficiently. Sintering will cause problems in electrical conductivity, adhesion characteristics and appearance.

此外,為了獲得電子元件D上面和側面及彎曲部位上的均勻的電磁波遮蔽膜,可調節金屬油墨M的表面張力。金屬油墨M的表面張力的最大值較佳為35dyn/cm,更加較佳為30dyn/cm以下。當金屬油墨M的表面張力高時,因金屬油墨M對電子元件D表面的潤濕性,油墨會集中在上面和側面,且在彎曲的部位上塗覆較薄,從而在燒成後可能會產生彎曲部位露出的缺陷。這種缺陷可透過反復進行浸漬步驟S20來消除,但在生產效率層面上當然應盡可能減少浸漬步驟S20的次數。In addition, in order to obtain a uniform electromagnetic wave shielding film on the top and sides of the electronic component D and on the curved portion, the surface tension of the metal ink M can be adjusted. The maximum value of the surface tension of the metallic ink M is preferably 35 dyn/cm, and more preferably 30 dyn/cm or less. When the surface tension of the metal ink M is high, due to the wettability of the metal ink M to the surface of the electronic component D, the ink will concentrate on the upper and side surfaces, and the thinner coating on the curved portion may result after firing Defects exposed at the bend. Such defects can be eliminated by repeating the impregnation step S20, but of course, the number of impregnation steps S20 should be reduced as far as possible in terms of production efficiency.

而且,為了體現電磁波遮蔽膜的遮蔽特性,由本實施例的金屬油墨M所形成的電磁波遮蔽膜所具有的電氣特性的最大值較佳為800Ω/cm2。當導電度較低時,為了確保所需的電磁波遮蔽特性導致電磁波遮蔽膜的厚度變厚,因此可能不利於電子元件D的輕薄短小化。Furthermore, in order to reflect the shielding characteristics of the electromagnetic wave shielding film, the maximum value of the electrical characteristics of the electromagnetic wave shielding film formed of the metallic ink M of the present embodiment is preferably 800Ω/cm 2. When the electrical conductivity is low, the thickness of the electromagnetic wave shielding film becomes thicker in order to ensure the required electromagnetic wave shielding characteristics, which may be unfavorable for the thinning and shortening of the electronic component D.

完成充分的浸漬後,如圖2的(c)所示,使電子元件D從收容槽20向上移動,並從收容槽20的金屬油墨M中取出電子元件D。After sufficient immersion is completed, as shown in FIG. 2( c ), the electronic component D is moved upward from the storage tank 20, and the electronic component D is taken out of the metallic ink M in the storage tank 20.

透過這種浸漬步驟S20,能夠在電子元件D的整體表面中需要電磁波遮蔽的部分的上面和側面上塗覆金屬油墨M。另外,根據需要電磁波遮蔽的高度設定被收容於收容槽20中的金屬油墨M的水位後,將電子元件D浸漬到收容槽20的底面後再取出時,具有能夠始終只對需要電磁波遮蔽的電子元件D的側面高度為止均勻形成電磁波遮蔽膜的優點。Through this dipping step S20, the metallic ink M can be applied to the upper and side surfaces of the portion of the entire surface of the electronic component D that requires electromagnetic wave shielding. In addition, when the water level of the metallic ink M contained in the storage tank 20 is set according to the height required for electromagnetic wave shielding, when the electronic component D is immersed in the bottom surface of the storage tank 20 and then taken out, there is always only The advantage of forming the electromagnetic wave shielding film uniformly up to the side height of the element D.

在該整平步驟S30中,如圖2的(d)所示,為了防止塗覆於電子元件D表面的金屬油墨M的集中現象,可進行去除集中在電子元件D表面上的過量金屬油墨M而平坦化的作業。作為一例,將具有規定硬度的材質來構成的刀片30配置在距電子元件D上面規定間隔的位置的狀態下,使刀片30和電子元件D進行相對移動時,刀片30能夠刮除過量塗覆於電子元件D上的金屬油墨M,從而進行平坦化。此外,也可採用如多孔材質的吸收材料來構成的刀片30吸收一定量的過量塗覆於電子元件D上的金屬油墨M來防止金屬油墨M的集中現象。作為如多孔材質的吸收材料可使用例如海綿、EVA泡沫及聚氨酯泡沫,除此之外可使用各種多孔吸收材料。In this leveling step S30, as shown in FIG. 2(d), in order to prevent the concentration phenomenon of the metal ink M coated on the surface of the electronic component D, the excessive metal ink M concentrated on the surface of the electronic component D may be removed And flatten the job. As an example, when the blade 30 made of a material with a predetermined hardness is disposed at a predetermined distance from the upper surface of the electronic component D, when the blade 30 and the electronic component D are relatively moved, the blade 30 can scrape off the excessive coating. The metal ink M on the electronic component D is planarized. In addition, the blade 30 composed of an absorbent material such as a porous material may also absorb a certain amount of metal ink M applied to the electronic component D in excess to prevent the concentration of the metal ink M. As an absorbent material such as a porous material, for example, sponge, EVA foam, and polyurethane foam can be used. In addition, various porous absorbent materials can be used.

在該燒成步驟S40中,在電子元件D表面上塗覆有金屬油墨M的狀態下,對電子元件D進行加熱而進行燒成。In this firing step S40, in a state where the metal ink M is coated on the surface of the electronic component D, the electronic component D is heated and fired.

本燒成步驟S40可包括一次燒成步驟及二次燒成步驟,一次燒成為預燒成,其條件可根據電子元件D的種類或使用環境而不同,但如圖2的(d)及(e)所示,可透過一次加熱機41對塗覆有金屬油墨M的電子元件D提供熱能,同時在80℃中進行一分鐘的預燒成。一次燒成步驟的主要目的是透過最小化或去除均勻塗覆於電子元件D表面上的金屬油墨M的流動性,從而達到二次燒成步驟之前保持均勻性。此外,在二次燒成步驟中,可透過二次加熱機42在150℃中進行五分鐘的燒成,但並不局限於這種燒成條件。The firing step S40 may include a primary firing step and a secondary firing step. The primary firing step becomes pre-firing, and the conditions may vary according to the type of electronic component D or the use environment, but as shown in (d) and ( As shown in e), the electronic element D coated with the metallic ink M can be supplied with thermal energy through the primary heating machine 41 while pre-firing at 80° C. for one minute. The main purpose of the primary firing step is to maintain uniformity before the secondary firing step by minimizing or removing the fluidity of the metallic ink M evenly coated on the surface of the electronic component D. In addition, in the secondary firing step, firing may be performed at 150° C. for five minutes through the secondary heater 42, but it is not limited to such firing conditions.

該卸載步驟S50為如圖2的(f)所示,用於從輸送載體10的粘貼部11分離電子元件D,在被分離的電子元件D中,只在部分上面和側面上形成有透過金屬油墨M的塗覆及燒成的電磁波遮蔽膜。This unloading step S50 is for separating the electronic component D from the sticking portion 11 of the transport carrier 10 as shown in (f) of FIG. 2. In the separated electronic component D, a permeable metal is formed only on a part of the upper surface and side surfaces Electromagnetic wave shielding film for coating and firing of ink M.

另外,在本實施例中使用的粘貼部11較佳在進行浸漬步驟S20的同時保持附著力,並且進入卸載步驟S50之前喪失粘貼力或具有較弱的粘貼力。在卸載步驟S50中,電子元件D安裝面的污染會導致產品不良,因此當然絕不能有從粘貼部11的粘貼物質的轉移。為了使電子元件D的粘貼力喪失,可使用紫外線(UV)固化膠帶,或者更佳地使用泡沫膠帶,也可使用能夠選擇性地使粘貼力喪失的膠帶。另外,將電子元件D附著於膠帶上且透過金屬油墨M來形成電磁波遮蔽膜後,只要粘貼部11保持從粘貼部11分離的過程中不會造成困難的附著力,則即使在浸漬步驟S20前後的粘貼力不變,也沒有關係。In addition, the adhesive part 11 used in this embodiment preferably maintains the adhesion while performing the immersion step S20, and loses the adhesive force or has a weak adhesive force before entering the unloading step S50. In the unloading step S50, the contamination of the mounting surface of the electronic component D causes product defects, so of course there must be no transfer of the sticking substance from the sticking portion 11. In order to lose the adhesive force of the electronic component D, an ultraviolet (UV) curing tape may be used, or more preferably a foam tape, or an adhesive tape that can selectively lose the adhesive force. In addition, after the electronic component D is attached to the tape and the electromagnetic wave shielding film is formed through the metal ink M, as long as the adhesive portion 11 maintains no difficulty in adhesion during separation from the adhesive portion 11, even before and after the immersion step S20 It doesn't matter if the sticking force is the same.

另外,如圖4所示,將積於收容槽20中的金屬油墨M的水位d2設定為與電子元件D的側面高度d1相同,並按電子元件D側面的厚度進行浸漬時,較佳地對粘貼部11表面選擇性進行疏水性處理。如前所述,若利用親水性處理後的電子元件D表面和疏水性處理後的粘貼部11表面的特性差異,則能夠在電子元件D的安裝部和粘貼部11之間不會滲金屬油墨M的狀態下形成電磁波遮蔽膜。為了賦予疏水性,粘貼部11可包含聚四氟乙烯或矽酮等疏水性物質,或利用這些物質來進行表面處理,也可利用奈米尺寸(nano meter size)的微細凸起。In addition, as shown in FIG. 4, when the water level d2 of the metal ink M accumulated in the storage tank 20 is set to be the same as the height d1 of the side surface of the electronic component D, and is immersed according to the thickness of the side surface of the electronic component D, it is preferable to The surface of the sticking portion 11 is selectively subjected to hydrophobic treatment. As described above, if the characteristics of the surface of the electronic component D after the hydrophilic treatment and the surface of the adhesive portion 11 after the hydrophobic treatment are different, no metal ink can penetrate between the mounting portion of the electronic component D and the adhesive portion 11 In the state of M, an electromagnetic wave shielding film is formed. In order to impart hydrophobicity, the adhesive portion 11 may contain hydrophobic materials such as polytetrafluoroethylene or silicone, or use these materials for surface treatment, or may use fine protrusions of nanometer size.

如此,透過本實施例,可透過將電子元件D表面浸漬在金屬油墨M中而在電子元件D的上面和側面上形成電磁波遮蔽膜,因此能夠透過簡化的製程提供優異的電磁波遮蔽效果。In this way, according to the present embodiment, the electromagnetic wave shielding film can be formed on the upper and side surfaces of the electronic component D by immersing the surface of the electronic component D in the metal ink M, and therefore, it is possible to provide an excellent electromagnetic wave shielding effect through a simplified process.

根據需要,為了從外部環境保護所形成的電磁波遮蔽膜,可在電磁波遮蔽膜上形成保護塗層。保護塗層較佳地使用熱固化樹脂或UV固化樹脂等的高分子樹脂組成。為了在半導體檢查製程中提高識別率或提高外觀品質,可進一步增加顏色(color),並且在將銀(Ag)作為電磁波遮蔽膜的金屬材料使用時,在該保護塗層的組成中可包括硫醇(mercaptan)化合物或羧酸(carboxylic acid)化合物或矽烷(silane)化合物。上述保護塗層的形成方法與前述金屬油墨M同樣,較佳採用利用浸漬製程來進行塗覆和固化的製程。If necessary, in order to protect the electromagnetic wave shielding film formed from the outside, a protective coating may be formed on the electromagnetic wave shielding film. The protective coating is preferably composed of a polymer resin such as thermosetting resin or UV curing resin. In order to improve the recognition rate or improve the appearance quality in the semiconductor inspection process, the color can be further increased, and when silver (Ag) is used as the metal material of the electromagnetic wave shielding film, sulfur can be included in the composition of the protective coating Alcohol (mercaptan) compounds or carboxylic acid compounds or silane compounds. The formation method of the above protective coating is the same as that of the aforementioned metal ink M, and it is preferable to adopt a process of coating and curing using a dipping process.

因此,根據本實施例,透過將電子元件D表面浸漬在金屬油墨M中而在電子元件D表面上形成電磁波遮蔽膜,並且根據需要形成保護塗層,從而能夠透過簡化的製程來提供優異的電磁波遮蔽效果。Therefore, according to the present embodiment, an electromagnetic wave shielding film is formed on the surface of the electronic component D by immersing the surface of the electronic component D in the metal ink M, and a protective coating is formed as necessary, so that an excellent electromagnetic wave can be provided through a simplified process Masking effect.

接下來,參照圖式,對本發明的第二實施例的電磁波遮蔽之塗層方法進行說明。Next, referring to the drawings, an electromagnetic wave shielding coating method according to a second embodiment of the present invention will be described.

圖5為根據本發明的第二實施例的電磁波遮蔽之塗層方法的製程圖。5 is a manufacturing process diagram of an electromagnetic wave shielding coating method according to a second embodiment of the present invention.

如圖5所示,第二實施例的電磁波遮蔽之塗層方法與第一實施例不同,利用具有多孔吸收結構的浸漬輥24間接進行浸漬。As shown in FIG. 5, the electromagnetic wave shielding coating method of the second embodiment is different from that of the first embodiment, and the impregnation roller 24 having a porous absorption structure is used for indirect impregnation.

此外,輸送載體10為在一面上設置有粘貼部,由輥狀捲曲的承載膜來構成,在輥對輥(roll-to-roll)方式輸送的過程中,依次執行加載步驟S10、浸漬步驟S20、燒成步驟S40及卸載步驟S50,因此對連續製程有利。In addition, the transport carrier 10 is provided with an adhesive portion on one surface, and is composed of a roll-shaped curled carrier film. During the roll-to-roll transportation, the loading step S10 and the dipping step S20 are sequentially performed The firing step S40 and the unloading step S50 are therefore beneficial to the continuous process.

具體地,在加載步驟S10中,在輸送載體10上緊貼電子元件D的安裝面後對其施加壓力進行附著。Specifically, in the loading step S10, the mounting surface of the electronic component D is closely adhered to the conveyance carrier 10, and pressure is applied thereto to adhere.

透過加載步驟S10附著於輸送載體10上的電子元件D在輥對輥線(line)上移動,並且移動至浸漬步驟S20。在浸漬步驟S20中,附著於輸送載體10上的電子元件D與浸漬輥24相接。此時,浸漬輥24由多孔吸收結構來構成,且處於預先在收容槽20的金屬油墨M中被浸漬而含有充分的金屬油墨M的狀態,可透過在收容槽20的上部區域旋轉的浸漬輥24在需要電磁波遮蔽的電子元件D的上面和側面上同時進行金屬油墨M的塗覆。此時,浸漬輥24的材質較佳使用聚氨酯泡沫、矽酮泡沫或泡沫橡膠,但除此之外,當然可以使用容易實現金屬油墨M的轉移且具有在電子元件D的上面和側面上塗覆金屬油墨M中所需彈性係數的材料。此外,該浸漬輥24和電子元件D之間的間隔可根據電子元件D的規格來調節,為此,在浸漬輥24的上部區域支撐輸送載體10相反面的輥可被構造為能夠進行上下位置調節。The electronic component D attached to the transport carrier 10 through the loading step S10 moves on a roll-to-roll line, and moves to the dipping step S20. In the dipping step S20, the electronic component D attached to the transport carrier 10 is in contact with the dipping roller 24. At this time, the immersion roller 24 is composed of a porous absorption structure, and is in a state of being previously immersed in the metal ink M of the storage tank 20 to contain sufficient metal ink M, and can penetrate the immersion roller rotating in the upper region of the storage tank 20 24. The metal ink M is simultaneously coated on the upper and side surfaces of the electronic component D requiring electromagnetic wave shielding. At this time, the material of the impregnating roller 24 is preferably polyurethane foam, silicone foam or foam rubber, but other than that, of course, it is possible to easily transfer the metal ink M and have metal coated on the top and sides of the electronic component D The material of the elasticity coefficient required in the ink M. In addition, the interval between the impregnating roller 24 and the electronic component D can be adjusted according to the specifications of the electronic component D. For this reason, the roller supporting the opposite side of the transport carrier 10 in the upper region of the impregnating roller 24 can be configured to be capable of up and down positions Adjust.

塗覆完金屬油墨M的電子元件D透過輥對輥線進行下一步驟即燒成步驟S40。在燒成步驟S40中,可透過一次加熱機41和二次加熱機42進行預燒成及最終燒成,透過這種燒成步驟S40若完全固化金屬油墨M,則在電子元件D的上面和側面上形成電磁波遮蔽膜,之後透過卸載步驟S50從輸送載體10分離電子元件D。After the electronic component D coated with the metal ink M passes through the roller-to-roller line, the next step is the firing step S40. In the firing step S40, the primary heater 41 and the secondary heater 42 can be used for pre-firing and final firing. If the metal ink M is completely cured through this firing step S40, the An electromagnetic wave shielding film is formed on the side, and then the electronic component D is separated from the carrier 10 through the unloading step S50.

另外,如第二實施例利用浸漬輥24間接進行浸漬時,可透過浸漬輥24的吸收率來控制塗覆於電子元件D表面上的金屬油墨M的塗覆量,因此可省略第一實施例中的整平步驟,該整平步驟用於去除過量塗覆於電子元件D表面上的金屬油墨M中的一部分。In addition, when the impregnation roller 24 is used for indirect impregnation as in the second embodiment, the application amount of the metal ink M applied on the surface of the electronic component D can be controlled through the absorption rate of the impregnation roller 24, so the first embodiment can be omitted The leveling step in is used to remove a portion of the metal ink M excessively coated on the surface of the electronic component D.

接下來,參照圖式,對本發明的第三實施例的電磁波遮蔽之塗層方法進行詳細說明。Next, referring to the drawings, the electromagnetic wave shielding coating method of the third embodiment of the present invention will be described in detail.

如圖6所示,第三實施例的電磁波遮蔽之塗層方法與第一實施例不同,由輥對輥製程來構成。As shown in FIG. 6, the electromagnetic wave shielding coating method of the third embodiment is different from the first embodiment, and is composed of a roll-to-roll process.

為此,輸送載體10為在一面上設置有粘貼部,並由輥狀捲曲的承載膜來構成,在輥對輥方式輸送的過程中,依次執行加載步驟S10、表面處理步驟、浸漬步驟S20、整平步驟S30、燒成步驟S40及卸載步驟S50,因此對連續製程有利。To this end, the transport carrier 10 is provided with an adhesive portion on one side, and is composed of a roll-shaped curled carrier film. During the roller-to-roll transport, the loading step S10, the surface treatment step, and the dipping step S20 are sequentially performed. The leveling step S30, the firing step S40, and the unloading step S50 are therefore beneficial to the continuous process.

如圖6所示,透過加載步驟S10附著於輸送載體10上的電子元件D在輥對輥線上移動,並且移動至浸漬步驟S20。在浸漬步驟S20中,附著有電子元件D的輸送載體10的相反面被加壓輥25加壓,從而被浸漬在收容槽20的金屬油墨M中。As shown in FIG. 6, the electronic component D attached to the transport carrier 10 through the loading step S10 moves on the roll-to-roll line, and moves to the immersion step S20. In the immersing step S20, the opposite surface of the transport carrier 10 to which the electronic component D is attached is pressed by the pressing roller 25, so as to be immersed in the metallic ink M of the storage tank 20.

此時,可利用配置於加壓輥25兩側的角度矯正機(angle roll)來調節電子元件D進入收容槽20的進入角度,因此能夠使在浸漬過程中塗覆於電子元件D上的金屬油墨M的均勻性最大化。在此,當該電子元件D的進入角度過大於水準時,有可能在電子元件D的進入時首先與收容槽20底部接觸的部分和之後接觸的部分的側面塗覆高度不一致,當進入角度過小時,只能塗覆電子元件D側面的一部分,從而有可能難以形成必要部分的電磁波遮蔽膜。At this time, the angle of the electronic rollers D into the accommodating tank 20 can be adjusted by an angle roll disposed on both sides of the pressure roller 25, so that the metallic ink applied to the electronic components D during the dipping process can be made The uniformity of M is maximized. Here, when the entry angle of the electronic component D is too large than the level, it is possible that the coating height of the side surface of the portion that first contacts the bottom of the receiving groove 20 and the contact portion after the entry of the electronic component D is inconsistent. When it is small, only a part of the side of the electronic component D can be coated, so that it may be difficult to form a necessary part of the electromagnetic wave shielding film.

之後,透過輥對輥方式輸送的電子元件D脫離透過加壓輥25朝向收容槽20加壓的區間,並且從收容槽20的金屬油墨M取出。此時,如前所述,收容槽20應保持規定量的水位,因此在收容槽20中較佳設置有如水位感測器21的水位調節裝置。此外,在收容槽20中可進一步設置有用於提供超聲波振動的振動裝置,因此還能提高浸漬效率,且可透過在收容槽20的底部上配置凹凸來控制金屬油墨M的流動性,從而改善塗覆特性。即,因金屬油墨M的流動性較高,難以實現均勻塗覆時,除了調節金屬油墨M的黏度之外,還可透過預備的收容槽20的凹凸來調節金屬油墨M的流阻,從而引導均勻的塗覆。After that, the electronic component D conveyed by the roller-to-roller method is separated from the section that is pressed toward the storage tank 20 by the pressure roller 25 and is taken out of the metallic ink M from the storage tank 20. At this time, as described above, the storage tank 20 should maintain a predetermined amount of water level. Therefore, a water level adjustment device such as a water level sensor 21 is preferably provided in the storage tank 20. In addition, a vibration device for providing ultrasonic vibration can be further provided in the containing tank 20, so that the impregnation efficiency can also be improved, and the fluidity of the metal ink M can be controlled by arranging irregularities on the bottom of the containing tank 20 to improve the coating OVER CHARACTERISTICS. That is, when the fluidity of the metallic ink M is high and it is difficult to achieve uniform coating, in addition to adjusting the viscosity of the metallic ink M, the flow resistance of the metallic ink M can be adjusted through the unevenness of the prepared storage tank 20 to guide Even coating.

透過如此的浸漬步驟S20,在電子元件D的整體表面中暴露於外部且需要電磁波遮蔽的上面和側面上塗覆金屬油墨M。Through such an immersion step S20, the metallic ink M is coated on the upper and side surfaces of the entire surface of the electronic component D that are exposed to the outside and require electromagnetic wave shielding.

透過輥對輥輸送方式的連續製程從收容槽20中取出電子元件D,之後該電子元件D透過輥對輥線移動後進入整平步驟S30。The electronic component D is taken out from the storage tank 20 through the continuous process of the roller-to-roller conveyance method, and then the electronic component D moves through the roller-to-roller line and then proceeds to the leveling step S30.

在該整平步驟S30中,為了防止在電子元件D在輥對輥線上移動的連續製程中塗覆於電子元件D表面上的金屬油墨M的集中現象,執行整平(leveling)作業,該整平作業透過刀片30刮除過量塗覆於電子元件D表面上的金屬油墨M,從而使之平坦。In this leveling step S30, in order to prevent the concentration of the metallic ink M coated on the surface of the electronic component D in a continuous process in which the electronic component D moves on the roll-to-roll line, a leveling operation is performed, which leveling In the operation, the metal ink M excessively applied on the surface of the electronic component D is scraped off by the blade 30 to make it flat.

在此,以利用與電子元件D隔開規定間隔的棒狀刀片30來進行整平為例進行了說明,但也可利用能夠透過去除過量塗覆的金屬油墨M中的一部分來進行平坦化的其他裝置,作為另一例,將刀片30由多孔吸收材料來構成,透過吸收規定量的集中在電子元件D表面上的金屬油墨M,從而能夠防止油墨的集中現象。Here, the flattening using the rod blade 30 spaced apart from the electronic component D by a predetermined interval has been described as an example, but it may also be flattened by removing part of the excessively applied metal ink M In another device, as another example, the blade 30 is composed of a porous absorbent material, and by absorbing a predetermined amount of the metallic ink M concentrated on the surface of the electronic component D, the concentration of ink can be prevented.

完成整平步驟S30後,透過輥對輥線進行下一步驟即燒成步驟S40。在燒成步驟S40中,可透過一次加熱機41和二次加熱機42來進行預燒成及最終燒成,透過這種燒成步驟S40若完全固化金屬油墨M,則在電子元件D的上面和側面上形成電磁波遮蔽膜,之後形成有電磁波遮蔽膜的電子元件D透過卸載步驟S50從輸送載體10分離。After completing the leveling step S30, the next step through the roller-to-roller line is the firing step S40. In the firing step S40, pre-firing and final firing can be performed through the primary heater 41 and the secondary heater 42, and if the metal ink M is completely cured through this firing step S40, it is on the electronic component D The electromagnetic wave shielding film is formed on the side surface, and then the electronic component D formed with the electromagnetic wave shielding film is separated from the transport carrier 10 through the unloading step S50.

如此,本發明將電子元件D的表面浸漬在金屬油墨中而形成電磁波遮蔽膜,因此能夠透過簡化的製程來提供優異的電磁波遮蔽效果。In this way, according to the present invention, the surface of the electronic component D is immersed in metal ink to form an electromagnetic wave shielding film. Therefore, an excellent electromagnetic wave shielding effect can be provided through a simplified process.

下面,透過實施例更加詳細地進行說明本發明的構造及效果。這些實施例只是用於例示本發明,本發明的範圍並不局限於這些實施例。物理性質檢測 Hereinafter, the structure and effect of the present invention will be described in more detail through examples. These examples are only for illustrating the present invention, and the scope of the present invention is not limited to these examples. Physical property testing

對油墨塗覆表面的面電阻,採用面電阻檢測儀(四探針,4 Point Probe)進行了檢測;對於黏度,取0.5ml的油墨並採用布氏黏度計在20rpm、25℃中進行了檢測;對表面張力,採用KRUSS公司的K20(Easy dyne)進行了檢測。The surface resistance of the ink-coated surface was tested using a surface resistance detector (4 Point Probe); for the viscosity, 0.5 ml of ink was taken and tested at 20 rpm and 25°C using a Brinell viscometer ; The surface tension was tested with KRUSS K20 (Easy dyne).

對分散粒度,採用動態光散射儀(dynamic light scattering)在丁基卡必醇溶劑中稀釋10%的油墨後進行了檢測。The dispersion particle size was measured by diluting 10% ink in butyl carbitol solvent using dynamic light scattering.

對塗覆厚度,採用FE-SEM進行了檢測;對電磁波遮蔽試驗,採用電磁波材料遮蔽性能儀(S21 Parameter,ASTM D4935)進行了檢測。電磁波遮蔽塗覆用油墨的製備 The coating thickness was tested by FE-SEM; for the electromagnetic shielding test, the electromagnetic shielding performance instrument (S21 Parameter, ASTM D4935) was used for testing. Preparation of electromagnetic wave shielding coating ink

製備例1:無粒子型銀油墨的製備Preparation Example 1: Preparation of particle-free silver ink

透過混合銀2-乙基己基氨基甲酸酯(100g)和溶劑(丁醇100g、異丁胺50g)、分散劑(BYK 145145,1g)、粘合劑樹脂(環氧樹脂,0.5g)、潤濕劑(antittera 204,0.2g)及流平劑(EFKA 350,0.05g),製備了黏度5cps、表面張力23dyne/cm及面電阻650mΩ/ cm2 的無粒子型銀油墨。By mixing silver 2-ethylhexyl carbamate (100g) and solvent (butanol 100g, isobutylamine 50g), dispersant (BYK 145145, 1g), binder resin (epoxy resin, 0.5g), Wetting agent (antittera 204, 0.2g) and leveling agent (EFKA 350, 0.05g) prepared particle-free silver ink with viscosity 5cps, surface tension 23dyne/cm and surface resistance 650mΩ/cm 2 .

製備例2:無粒子型金屬油墨的製備Preparation Example 2: Preparation of particle-free metal ink

透過混合銀2-乙基己基氨基甲酸酯100g和溶劑(茴香醚20g,2-乙基己胺40g)、分散劑(BYK 145,0.5g)、粘合劑樹脂(環氧樹脂,0.3g)、潤濕劑(antittera 204,0.2g)及流平劑(EFKA 350,0.05g),製備了黏度38cps、表面張力29dyne/cm及面電阻300mΩ/ cm2 的無粒子型銀油墨。By mixing 100g of silver 2-ethylhexyl carbamate and a solvent (anisole 20g, 2-ethylhexylamine 40g), dispersant (BYK 145, 0.5g), binder resin (epoxy resin, 0.3g ), wetting agent (antittera 204, 0.2g) and leveling agent (EFKA 350, 0.05g), a particle-free silver ink with a viscosity of 38cps, a surface tension of 29dyne/cm and a surface resistance of 300mΩ/cm 2 was prepared.

製備例3:奈米粒子分散型金屬油墨的製備Preparation Example 3: Preparation of Nano Particle Dispersed Metallic Ink

對銀奈米粒子40g和溶劑(丁基卡必醇,60g)、分散劑(BYK 145,4g)、穩定劑(乙基纖維素,2g)及粘合劑樹脂(乙酸丁酸纖維素,1g)在500ml反應機中進行混合,並採用0.3mm的珠(Beeds)均勻地進行了六個小時的混合及反應。For silver nanoparticles 40g and solvent (butyl carbitol, 60g), dispersant (BYK 145, 4g), stabilizer (ethyl cellulose, 2g) and binder resin (cellulose acetate butyrate, 1g) ) Mixing was carried out in a 500ml reactor, and 0.3mm beads (Beeds) were used to uniformly mix and react for six hours.

完成反應後,透過篩檢程式去除珠以獲得均勻分散有銀奈米粒子的油墨,且製備了黏度50cps、表面張力26dyne/cm及面電阻90mΩ/ cm2 的油墨。After the reaction was completed, the beads were removed through a screening program to obtain an ink with silver nanoparticles uniformly dispersed, and an ink with a viscosity of 50 cps, a surface tension of 26 dyne/cm, and a surface resistance of 90 mΩ/cm 2 was prepared.

製備例4:奈米粒子分散型金屬油墨的製備Preparation Example 4: Preparation of Nano Particle Dispersed Metal Ink

對銀奈米粒子(40g)和溶劑(丙二醇甲醚乙酸酯,50g)、分散劑(BYK 330,5g)、穩定劑(乙基纖維素,2g)及粘合劑樹脂(聚乙烯醇縮丁醛,1g)在500ml的反應機中進行混合,並採用0.3mm的珠均勻地進行了六個小時的混合及反應。完成反應後,透過篩檢程式去除珠以獲得均勻分散有銀奈米粒子的油墨,且製備了黏度400cps、表面張力35dyne/cm及面電阻50mΩ/ cm2 的油墨。For silver nanoparticles (40g) and solvent (propylene glycol methyl ether acetate, 50g), dispersant (BYK 330, 5g), stabilizer (ethyl cellulose, 2g) and binder resin (polyvinyl alcohol) Butyraldehyde, 1 g) was mixed in a 500 ml reactor and mixed and reacted uniformly for 6 hours using 0.3 mm beads. After the reaction was completed, the beads were removed through a screening program to obtain an ink with silver nanoparticles uniformly dispersed, and an ink with a viscosity of 400 cps, a surface tension of 35 dyne/cm, and a surface resistance of 50 mΩ/cm 2 was prepared.

製備例5:膏狀金屬油墨的製備Preparation Example 5: Preparation of Paste Metallic Ink

對銀粉(40g)、粘合劑樹脂(環氧樹脂,10g)、粘附促進劑(BYK 4510,0.3g)、觸變劑(煙霧矽膠,0.05g)及溶劑(丁基卡必醇,0.5g)進行混合後,採用三輥軋機進行混合,以製備黏度50000cps及面電阻60mΩ/ cm2 的膏油墨。電磁波遮蔽的塗覆製程 實施例 1 For silver powder (40g), binder resin (epoxy resin, 10g), adhesion promoter (BYK 4510, 0.3g), thixotropic agent (smoke silicone, 0.05g) and solvent (butyl carbitol, 0.5 g) After mixing, use a three-roll mill to mix to prepare paste ink with viscosity 50000cps and surface resistance 60mΩ/cm 2 . Electromagnetic wave shielding coating process example 1

採用製備例1的黏度5cps的無粒子型金屬油墨,透過第一實施例的垂直浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在150℃下進行5分鐘的燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 5 cps in Preparation Example 1, through the vertical dipping process of the first embodiment, the five surfaces of the six sides of the semiconductor package except for the bottom surface are coated, and then at 150 ℃ 5 Firing in minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為700mΩ/cm2 ,階梯覆蓋率為93%,遮蔽率為32dB。實施例 2 The surface resistance of the shielding film thus formed was 700 mΩ/cm 2 , the step coverage was 93%, and the shielding rate was 32 dB. Example 2

採用製備例2的黏度38cps的無粒子型金屬油墨,透過第一實施例的垂直浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在80℃下進行1分鐘的預燒成,並在150℃下進行5分鐘的最終燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 38 cps of Preparation Example 2, through the vertical dipping process of the first embodiment, the five surfaces of the six sides of the semiconductor package except the bottom surface are coated, and then at 80 ℃ 1 Pre-firing for 5 minutes and final firing at 150°C for 5 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為350mΩ/cm2 ,階梯覆蓋率為95%,遮蔽率為42dB。實施例 3 The surface resistance of the shielding film thus formed was 350 mΩ/cm 2 , the step coverage was 95%, and the shielding ratio was 42 dB. Example 3

採用製備例3的黏度50cps的奈米粒子分散型金屬油墨,透過第一實施例的垂直浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行10分鐘的燒成來形成電磁波遮蔽膜。Using the nanoparticle-dispersed metal ink with a viscosity of 50 cps in Preparation Example 3, the vertical dipping process of the first embodiment was used to coat five of the six surfaces of the semiconductor package except the bottom surface, and then at 130° C. The firing was performed for 10 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為100mΩ/cm2 ,階梯覆蓋率為94%,遮蔽率為50dB。實施例 4 The surface resistance of the shielding film thus formed was 100 mΩ/cm 2 , the step coverage was 94%, and the shielding rate was 50 dB. Example 4

採用製備例4的黏度400cps的銀奈米粒子分散型金屬油墨,透過第一實施例的垂直浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行15分鐘的燒成來形成電磁波遮蔽膜。Using the silver nanoparticle dispersion type metal ink with a viscosity of 400 cps of Preparation Example 4, through the vertical dipping process of the first example, the five surfaces of the semiconductor package except the bottom surface are coated on the six surfaces, and then at 130°C The firing was performed for 15 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為55mΩ/cm2 ,階梯覆蓋率為95%,遮蔽率為61dB。實施例 5 The surface resistance of the shielding film thus formed was 55 mΩ/cm 2 , the step coverage was 95%, and the shielding rate was 61 dB. Example 5

採用製備例5的黏度50000cps的銀膏狀金屬油墨,透過第一實施例的垂直浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行20分鐘的燒成來形成電磁波遮蔽膜。Using the silver paste-like metallic ink with the viscosity of 50000cps of Preparation Example 5, through the vertical dipping process of the first embodiment, the six surfaces of the semiconductor package except for the bottom surface are coated, and then at 130 ℃ 20 Firing in minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為65mΩ/cm2 ,階梯覆蓋率為95%,遮蔽率為57dB。實施例 6 The surface resistance of the shielding film thus formed was 65 mΩ/cm 2 , the step coverage was 95%, and the shielding rate was 57 dB. Example 6

採用製備例1的黏度5cps的無粒子型金屬油墨,透過第二實施例的間接浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在80℃下進行1分鐘的預燒,並在150℃下進行5分鐘的最終燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 5 cps in Preparation Example 1, through the indirect dipping process of the second embodiment, the five surfaces of the six sides of the semiconductor package except the bottom surface are coated, and then at 80 ℃ 1 It is pre-fired for 5 minutes and finally fired at 150°C for 5 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為750mΩ/cm2 ,階梯覆蓋率為90%,遮蔽率為30dB。實施例 7 The surface resistance of the shielding film thus formed was 750 mΩ/cm 2 , the step coverage was 90%, and the shielding rate was 30 dB. Example 7

採用製備例2的黏度38cps的無粒子型金屬油墨,透過第二實施例的間接浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在150℃下進行5分鐘的燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 38 cps in Preparation Example 2, through the indirect dipping process of the second example, the five surfaces of the six sides of the semiconductor package except the bottom surface are coated, and then at 150 ℃ 5 Firing in minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為400mΩ/cm2 ,階梯覆蓋率為92%,遮蔽率為40dB。實施例 8 The surface resistance of the shielding film thus formed was 400 mΩ/cm 2 , the step coverage was 92%, and the shielding rate was 40 dB. Example 8

採用製備例3的黏度50cps的奈米粒子分散型金屬油墨,透過第二實施例的間接浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行10分鐘的燒成來形成電磁波遮蔽膜。Using the nanoparticle-dispersed metal ink with a viscosity of 50 cps in Preparation Example 3, through the indirect immersion process of the second example, five of the six surfaces of the semiconductor package except the bottom surface are coated, and then at 130° C. The firing was performed for 10 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為150mΩ/cm2 ,階梯覆蓋率為91%,遮蔽率為48dB。實施例 9 The surface resistance of the shielding film thus formed was 150 mΩ/cm 2 , the step coverage was 91%, and the shielding rate was 48 dB. Example 9

採用製備例4的黏度400cps的銀奈米粒子分散型金屬油墨,透過第二實施例的間接浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行15分鐘的燒成來形成電磁波遮蔽膜。Using the silver nanoparticle-dispersed metal ink with a viscosity of 400 cps in Preparation Example 4, through the indirect dipping process of the second example, five of the six surfaces of the semiconductor package except the bottom surface were coated, and then at 130°C The firing was performed for 15 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為57mΩ/cm2 ,階梯覆蓋率為93%,遮蔽率為61dB。實施例 10 The surface resistance of the shielding film thus formed was 57 mΩ/cm 2 , the step coverage was 93%, and the shielding rate was 61 dB. Example 10

採用製備例5的黏度50000cps的銀膏狀金屬油墨,透過第二實施例的間接浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行20分鐘的燒成來形成電磁波遮蔽膜。Using the silver paste-like metallic ink with the viscosity of 50000cps of Preparation Example 5, through the indirect dipping process of the second embodiment, the six surfaces of the semiconductor package except the bottom surface are coated on the five surfaces, and then at 130 ℃ 20 Firing in minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為70mΩ/cm2 ,階梯覆蓋率為92%,遮蔽率為56dB。實施例 11 The surface resistance of the shielding film thus formed was 70 mΩ/cm 2 , the step coverage was 92%, and the shielding rate was 56 dB. Example 11

採用製備例1的黏度5cps的無粒子型金屬油墨,透過第三實施例的輥對輥浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在150℃下進行5分鐘的燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 5 cps in Preparation Example 1, through the roll-to-roll dipping process of the third example, five surfaces of the six sides of the semiconductor package except the bottom surface are coated, and then at 150° C. The firing was performed for 5 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為650mΩ/cm2 ,階梯覆蓋率為95%,遮蔽率為34dB。實施例 12 The surface resistance of the shielding film thus formed was 650 mΩ/cm 2 , the step coverage was 95%, and the shielding rate was 34 dB. Example 12

採用製備例2的黏度38cps的無粒子型金屬油墨,透過第三實施例的輥對輥浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在80℃下進行1分鐘的預燒成,並在150℃下進行5分鐘的最終燒成來形成電磁波遮蔽膜。Using the particle-free metal ink with a viscosity of 38 cps of Preparation Example 2, through the roll-to-roll dipping process of the third example, the five surfaces of the six sides of the semiconductor package except the bottom surface are coated, and then at 80° C. The preliminary firing was performed for 1 minute, and the final firing was performed at 150°C for 5 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為300mΩ/cm2 ,階梯覆蓋率為96%,遮蔽率為43dB。實施例 13 The surface resistance of the shielding film thus formed was 300 mΩ/cm 2 , the step coverage was 96%, and the shielding rate was 43 dB. Example 13

採用製備例3的黏度50cps的奈米粒子分散型金屬油墨,透過第三實施例的輥對輥浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行10分鐘的燒成來形成電磁波遮蔽膜。Using the nanoparticle-dispersed metal ink with a viscosity of 50 cps in Preparation Example 3, through the roll-to-roll dipping process of the third example, five of the six faces of the semiconductor package except the bottom face are coated, and then coated at 130 The sintering is performed at 10° C. for 10 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為90mΩ/cm2 ,階梯覆蓋率為97%,遮蔽率為52dB。實施例 14 The surface resistance of the shielding film thus formed was 90 mΩ/cm 2 , the step coverage was 97%, and the shielding rate was 52 dB. Example 14

採用製備例4的黏度400cps的銀奈米粒子分散型金屬油墨,透過第三實施例的輥對輥浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行15分鐘的燒成來形成電磁波遮蔽膜。Using the silver nanoparticle dispersion type metal ink with a viscosity of 400 cps in Preparation Example 4, through the roll-to-roll dipping process of the third example, the six surfaces of the semiconductor package except the bottom surface are coated on the six surfaces, and then coated on Firing was performed at 130°C for 15 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為50mΩ/cm2 ,階梯覆蓋率為96%,遮蔽率為65dB。實施例 15 The surface resistance of the shielding film thus formed was 50 mΩ/cm 2 , the step coverage was 96%, and the shielding rate was 65 dB. Example 15

採用製備例5的黏度50000cps的銀膏狀金屬油墨,透過第三實施例的輥對輥浸漬製程在半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在130℃下進行20分鐘的燒成來形成電磁波遮蔽膜。Using the silver paste-like metallic ink with the viscosity of 50000cps of Preparation Example 5, through the roll-to-roll dipping process of the third example, five of the six surfaces of the semiconductor package except the bottom surface were coated, and then at 130°C The baking was performed for 20 minutes to form an electromagnetic wave shielding film.

如此形成的遮蔽膜的面電阻為60mΩ/cm2 ,階梯覆蓋率為96%,遮蔽率為59dB。電磁波遮蔽膜保護塗覆 實施例 19 The surface resistance of the shielding film thus formed was 60 mΩ/cm 2 , the step coverage was 96%, and the shielding rate was 59 dB. Electromagnetic wave shielding film protective coating example 19

在實施例中製備的電磁波遮蔽膜的上層形成保護塗層,該保護塗層透過第三實施例的輥對輥浸漬製程由熱固化樹脂對半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後在180℃下進行10分鐘的燒成來形成。實施例 20 The upper layer of the electromagnetic wave shielding film prepared in the embodiment forms a protective coating layer, which passes through the roller-to-roller dipping process of the third embodiment from thermosetting resin to the five sides of the semiconductor package except the bottom side The surface is coated and then fired at 180°C for 10 minutes to form. Example 20

在實施例中製備的電磁波遮蔽膜的上層形成保護塗層,該保護塗層透過第三實施例的輥對輥浸漬製程由紫外線固化樹脂對半導體封裝件的六個面中除了底面以外的五個面進行塗覆,然後進行紫外線固化來形成。電磁波遮蔽塗覆製程的比較例 比較例 1 :濺射製程 The upper layer of the electromagnetic wave shielding film prepared in the embodiment forms a protective coating, which passes through the roll-to-roll dipping process of the third embodiment from the ultraviolet curing resin to the five sides of the semiconductor package except the bottom side The surface is coated and then UV cured to form. Comparative example of electromagnetic wave shielding coating process Comparative example 1 : Sputtering process

採用濺射裝置即直流磁控濺射裝置,將金屬燒結體作為濺射目標形成了膜。在室溫、直流500W以及氧濃度6%的成膜條件下實施,且在大氣氛圍中300℃×1小時的退火條件中實施。調節濺射角度,以便能夠對除了具有錫球的面以外的其餘五個面進行塗覆處理,從而在上面和側面對該目標模組進行濺射而形成SUS/CU/SUS多層結構的遮蔽膜。A sputtering device, that is, a DC magnetron sputtering device, was used to form a film using a metal sintered body as a sputtering target. It was carried out under film-forming conditions of room temperature, DC 500 W, and an oxygen concentration of 6%, and was carried out under annealing conditions of 300° C.×1 hour in an atmosphere. Adjust the sputtering angle so that the other five surfaces except the surface with solder balls can be coated, so that the target module is sputtered on the upper and side surfaces to form a SUS/CU/SUS multilayer structure shielding film .

如此形成的遮蔽膜的階梯覆蓋率為41%。比較例 2 :噴射製程 The step coverage of the masking film thus formed was 41%. Comparative Example 2 : Injection process

採用噴射裝置(787MS-SS閥)將製備例3的黏度50cps的奈米粒子分散型油墨分別噴射塗覆到半導體封裝件的上側和側面,然後在130℃下進行10分鐘的燒成來形成電磁波遮蔽膜。Using a jetting device (787MS-SS valve), the nanoparticle-dispersed ink with a viscosity of 50 cps in Preparation Example 3 was spray-coated on the upper and side surfaces of the semiconductor package, respectively, and then fired at 130°C for 10 minutes to form an electromagnetic wave Masking film.

如此形成的遮蔽膜的階梯覆蓋率為47%。物理性質檢測結果 The step coverage of the masking film thus formed was 47%. Physical property test results

所製備的電磁波遮蔽油墨的特性如下表1。The characteristics of the prepared electromagnetic wave shielding ink are shown in Table 1 below.

表1 Table 1

在實施例中製備的、根據各電磁波遮蔽浸漬製程形成的電磁波遮蔽膜的特性記入表2中。The characteristics of the electromagnetic wave shielding films prepared in the examples and formed according to each electromagnetic wave shielding and dipping process are shown in Table 2.

表2 按浸漬製程及油墨種類的電磁波遮蔽膜的物理性質 Table 2 Physical properties of electromagnetic wave shielding film according to impregnation process and ink type

表3 按電磁波遮蔽形成製程的塗覆膜階梯覆蓋率的特性比較 Table 3 Comparison of the characteristics of the step coverage of the coating film according to the electromagnetic wave shielding forming process

本發明的權利範圍並不限於上述實施例,在所附的申請專利範圍的範圍內可由多種形式的實施例實現。在不脫離申請專利範圍所要求保護的本發明精神的範圍內,本發明所屬技術領域的技術人員均能變化的各種範圍也屬於本發明的申請專利範圍所記載的範圍內。The scope of rights of the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms of embodiments within the scope of the appended patent application. Without departing from the spirit of the invention claimed in the scope of the patent application, various ranges that can be changed by those skilled in the art to which the invention belongs fall within the scope of the patent application scope of the invention.

10‧‧‧輸送載體 10‧‧‧Conveyor

11‧‧‧粘貼部 11‧‧‧Paste Department

20‧‧‧收容槽 20‧‧‧ containment tank

21‧‧‧水位感測器 21‧‧‧Water level sensor

22‧‧‧供給裝置 22‧‧‧Supply device

23‧‧‧儲罐 23‧‧‧ storage tank

24‧‧‧浸漬輥 24‧‧‧Immersion roller

25‧‧‧加壓輥 25‧‧‧Pressure roller

30‧‧‧刀片 30‧‧‧Blade

41‧‧‧預乾燥機 41‧‧‧Pre-dryer

42‧‧‧最終乾燥機 42‧‧‧Final dryer

D‧‧‧電子元件 D‧‧‧Electronic components

M‧‧‧金屬油墨 M‧‧‧Metallic ink

P‧‧‧等離子體 P‧‧‧Plasma

步驟S10‧‧‧加載 Step S10‧‧‧Load

步驟S20‧‧‧浸漬 Step S20 ‧‧‧Immersion

步驟S30‧‧‧整平 Step S30‧‧‧Leveling

步驟S40‧‧‧燒成 Step S40 ‧‧‧ firing

步驟S50‧‧‧卸載 Step S50‧‧‧Uninstall

圖1為根據本發明的第一實施例的電磁波遮蔽之塗層方法的製程順序圖。   圖2為圖1的按步驟表示的製程圖。   圖3為圖2中表示的收容槽的放大圖。   圖4為表示根據本發明的第一實施例的電磁波遮蔽之塗層方法的浸漬步驟的變形例的製程圖。   圖5為根據本發明的第二實施例的電磁波遮蔽之塗層方法的製程圖。   圖6為根據本發明的第三實施例的電磁波遮蔽之塗層方法的製程圖。FIG. 1 is a process sequence diagram of an electromagnetic wave shielding coating method according to the first embodiment of the present invention.   FIG. 2 is a process diagram shown in steps of FIG. 1. Fig. 3 is an enlarged view of the storage tank shown in Fig. 2. FIG. 4 is a process diagram showing a modification of the impregnation step of the electromagnetic wave shielding coating method according to the first embodiment of the present invention. FIG. 5 is a manufacturing process diagram of the electromagnetic wave shielding coating method according to the second embodiment of the present invention. FIG. 6 is a manufacturing process diagram of the electromagnetic wave shielding coating method according to the third embodiment of the present invention.

Claims (12)

一種電磁波遮蔽之塗層方法,包括: 加載步驟,將電子元件的一面附著在輸送載體上; 浸漬步驟,將附著於該輸送載體上的該電子元件浸漬(dipping)在收容有金屬油墨的收容槽中,從而在該電子元件的暴露的外表面上塗覆金屬油墨; 燒成步驟,對塗覆於該電子元件上的金屬油墨進行固化;及 卸載步驟,從該輸送載體中分離該電子元件。An electromagnetic wave shielding coating method, including: a loading step, attaching one side of an electronic component to a transport carrier; an immersing step, dipping the electronic component attached to the transport carrier in a receiving tank containing metal ink In order to apply metal ink to the exposed outer surface of the electronic component; a firing step to cure the metal ink applied to the electronic component; and an unloading step to separate the electronic component from the transport carrier. 如請求項1所述之電磁波遮蔽之塗層方法,其中,在該浸漬步驟之前,進一步執行對該電子元件的暴露表面上賦予親水性的表面處理步驟。The electromagnetic wave shielding coating method according to claim 1, wherein, before the immersing step, a surface treatment step of imparting hydrophilicity to the exposed surface of the electronic component is further performed. 如請求項2所述之電磁波遮蔽之塗層方法,其中,在該表面處理步驟中對該電子元件表面進行等離子體處理。The electromagnetic wave shielding coating method according to claim 2, wherein the surface of the electronic component is subjected to plasma treatment in the surface treatment step. 如請求項2所述之電磁波遮蔽之塗層方法,其中,該輸送載體的該電子元件附著面具有疏水性。The electromagnetic wave shielding coating method according to claim 2, wherein the electronic component attachment surface of the transport carrier has hydrophobicity. 如請求項1所述之電磁波遮蔽之塗層方法,其中,在該燒成步驟之前,進一步執行對塗覆於該電子元件表面上的金屬油墨的塗覆厚度進行勻化的整平步驟。The electromagnetic wave shielding coating method according to claim 1, wherein before the firing step, a leveling step of leveling the coating thickness of the metal ink applied on the surface of the electronic component is further performed. 如請求項5所述之電磁波遮蔽之塗層方法,其中,在該整平步驟中,採用刀片刮除在該浸漬步驟中在該電子元件表面上過量塗覆的金屬油墨,從而整平(leveling)成平坦狀。The electromagnetic wave shielding coating method according to claim 5, wherein in the leveling step, the metal ink that is excessively coated on the surface of the electronic component in the dipping step is scraped off with a blade, thereby leveling (leveling ) Into a flat shape. 如請求項5所述之電磁波遮蔽之塗層方法,其中,在該整平步驟中,採用由吸收材料構成的刀片吸收在該浸漬步驟中在該電子元件表面上過量塗覆的金屬油墨,從而整平(leveling)成平坦狀。The electromagnetic wave shielding coating method according to claim 5, wherein in the leveling step, a blade made of an absorbing material is used to absorb the metal ink excessively coated on the surface of the electronic component in the dipping step, thereby Leveling is flat. 如請求項1所述之電磁波遮蔽之塗層方法,其中,在該浸漬步驟中,根據附著於該輸送載體上的該電子元件規格,控制該電子元件的浸漬深度。The electromagnetic wave shielding coating method according to claim 1, wherein in the immersing step, the immersion depth of the electronic component is controlled according to the specifications of the electronic component attached to the transport carrier. 如請求項8所述之電磁波遮蔽之塗層方法,其中,該收容槽將金屬油墨的水位調整為與該電子元件的厚度相同或比該厚度低的深度。The electromagnetic wave shielding coating method according to claim 8, wherein the receiving tank adjusts the water level of the metal ink to a depth that is the same as or lower than the thickness of the electronic component. 如請求項1所述之電磁波遮蔽之塗層方法,其中,該輸送載體係由輥對輥方式輸送的承載膜所構成,在該承載膜的一側面上設置有粘貼部,該電子元件的一面能夠附著在該粘貼部。The electromagnetic wave shielding coating method according to claim 1, wherein the conveying carrier is composed of a carrier film conveyed in a roll-to-roll manner, an adhesive part is provided on one side of the carrier film, and one side of the electronic component It can be attached to this sticking part. 如請求項10所述之電磁波遮蔽之塗層方法,其中,在該浸漬步驟中,採用在該收容槽的上側受控升降的浸漬輥對該輸送載體的附著有該電子元件的表面的相反面向該收容槽進行加壓,從而控制該電子元件的浸漬深度。The electromagnetic wave shielding coating method according to claim 10, wherein, in the impregnation step, an impregnating roller controlled to be raised and lowered on the upper side of the receiving tank is used to face the surface of the conveyance carrier to which the electronic component is attached The storage tank is pressurized to control the immersion depth of the electronic component. 如請求項10所述之電磁波遮蔽之塗層方法,其中,在該浸漬步驟中,吸收該收容槽中金屬油墨的浸漬輥旋轉的同時,對在浸漬輥的上側移動的電子元件外表面塗覆金屬油墨。The electromagnetic wave shielding coating method according to claim 10, wherein in the immersion step, the outer surface of the electronic component moving on the upper side of the immersion roller is coated while the immersion roller absorbing the metallic ink in the containing tank rotates Metallic ink.
TW107103903A 2017-02-03 2018-02-02 Electromagnetic wave shield coating method TWI676711B (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
??10-2017-0015770 2017-02-03
KR10-2017-0015770 2017-02-03
KR20170015770 2017-02-03
KR1020170051819A KR102044773B1 (en) 2017-02-03 2017-04-21 electromagnetic wave shield coating method
??10-2017-0051819 2017-04-21
KR10-2017-0051819 2017-04-21

Publications (2)

Publication Number Publication Date
TW201829839A true TW201829839A (en) 2018-08-16
TWI676711B TWI676711B (en) 2019-11-11

Family

ID=63230377

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107103903A TWI676711B (en) 2017-02-03 2018-02-02 Electromagnetic wave shield coating method

Country Status (2)

Country Link
KR (1) KR102044773B1 (en)
TW (1) TWI676711B (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548327B2 (en) * 2000-04-24 2003-04-15 Interuniversitair Microelektronica Centrum, Vzw Low cost electroless plating process for single chips and wafer parts and products obtained thereof
JP2004200599A (en) * 2002-12-20 2004-07-15 Tokai Rubber Ind Ltd Manufacturing method for transparent electromagnetic shield film for plasma-display, and transparent electromagnetic shield film for plasma-display obtained thereby
JP5096771B2 (en) * 2007-03-23 2012-12-12 三菱製紙株式会社 Conductive expression method
US8282860B2 (en) * 2006-08-07 2012-10-09 Inktec Co., Ltd. Process for preparation of silver nanoparticles, and the compositions of silver ink containing the same
KR100839930B1 (en) 2007-02-15 2008-06-20 주식회사 단양솔텍 Nonmetal plating method for electromagnetic wave shield and nonmetal coated by the method
JP2010541285A (en) * 2007-10-02 2010-12-24 パーカー.ハニフィン.コーポレイション Nano ink for providing EMI shielding to windows
KR101226086B1 (en) * 2010-10-22 2013-01-24 한국과학기술원 Pattern fabricating method and pattern transferring apparatus
KR20140010262A (en) * 2012-07-16 2014-01-24 삼성전기주식회사 Insulating base material plated with metal layer, plating method thereof, and transparent electrode using the same
KR101686318B1 (en) 2014-09-23 2016-12-13 명지대학교 산학협력단 Method and apparatus for forming an EMI-shielding layer using a sputtering process
KR101666786B1 (en) * 2014-11-21 2016-10-17 (주) 씨앤아이테크놀로지 Apparatus for Manufacturing Adhesive-Pad for EMI shielding of Semiconductor Packages and Method for Manufacturing Adhesive-Pad Using the Same

Also Published As

Publication number Publication date
KR102044773B1 (en) 2019-11-18
KR20180090953A (en) 2018-08-14
TWI676711B (en) 2019-11-11

Similar Documents

Publication Publication Date Title
TWI791769B (en) Electronic component packaging and manufacturing method thereof
CN105378919B (en) The sputtering method and its sputtering equipment of semiconductor package part EMI shieldings are used for using liquid adhesive
CN103796433B (en) Manufacturing method of circuit board mixed surface process
EP3070738B1 (en) Through electrode and method for producing multilayer substrate using through electrode
US8334048B2 (en) Conductive elastomer and method of applying a conductive coating to elastomeric substrate
CN113744928B (en) Antioxidant transparent conductive film and preparation method and application thereof
SG176819A1 (en) Method for producing a structured metal coating
CN112205088A (en) Method for manufacturing printed wiring board
CN108884358B (en) Conductive coating material and method for manufacturing shield package using same
TWI676711B (en) Electromagnetic wave shield coating method
CN110769944B (en) Electromagnetic wave shielding coating method
JP4848502B2 (en) WIRING, MANUFACTURING METHOD THEREOF, AND ELECTRONIC COMPONENT AND ELECTRONIC DEVICE USING THEM
TW200417300A (en) A process and an apparatus for coating printed circuit boards with laser-structurable, thermally curable solder stop lacquers and electroresists
CN112638143B (en) Efficient electromagnetic shielding nano silver paste and preparation method thereof
TW201839893A (en) EMI shielding apparatus and method for semiconductor chip
CN1280899C (en) Mask sheet for assembling semiconductor device and method for assembling semiconductor device
WO2020177736A1 (en) Method for preparing touch screen
TW201642425A (en) Method for manufacturing of fine line circuitry
JP6447010B2 (en) Transparent conductive film and method for producing transparent conductor having the transparent conductive film
KR20190036480A (en) Conductive Adhesive Film Having Improved Moisture and Heat Resistance
US11818849B1 (en) Increasing adhesion of metal-organic interfaces by silane vapor treatment
KR20190083033A (en) Package EMI for Semiconductor
JP4801448B2 (en) Method for forming optical film
EP2507186B1 (en) Surface treatments and coatings
Erickson Reducing the Cost of Applying Ultra-Thin, Package Level EMI Shield Coatings