TW201828419A - Electronic package and method for fabricating the same - Google Patents

Electronic package and method for fabricating the same Download PDF

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Publication number
TW201828419A
TW201828419A TW106103206A TW106103206A TW201828419A TW 201828419 A TW201828419 A TW 201828419A TW 106103206 A TW106103206 A TW 106103206A TW 106103206 A TW106103206 A TW 106103206A TW 201828419 A TW201828419 A TW 201828419A
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Taiwan
Prior art keywords
electronic component
electronic
package
component
conductive
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TW106103206A
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Chinese (zh)
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TWI612627B (en
Inventor
符毅民
王愉博
王隆源
江政嘉
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矽品精密工業股份有限公司
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Priority to TW106103206A priority Critical patent/TWI612627B/en
Priority to CN201710078122.6A priority patent/CN108364916A/en
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Publication of TWI612627B publication Critical patent/TWI612627B/en
Publication of TW201828419A publication Critical patent/TW201828419A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73267Layer and HDI connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18162Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An electronic package is provided, including a packaging member having a first electronic component, a second electronic component and a conductive post disposed on the packaging member, an encapsulating layer encapsulating the second electronic component and the conductive post, and a second circuit structure disposed on the encapsulating layer, wherein the second electronic component is stacked on the first electronic component. Therefore, the electronic package has a planer area reduced. A method for fabricating the electronic package is also provided.

Description

電子封裝件及其製法  Electronic package and its manufacturing method  

本發明係有關一種半導體封裝技術,尤指一種電子封裝件及其製法。 The present invention relates to a semiconductor packaging technology, and more particularly to an electronic package and a method of fabricating the same.

隨著電子產業的蓬勃發展,電子產品也逐漸邁向多功能、高性能的趨勢。為了滿足電子封裝件微型化(miniaturization)的封裝需求,係發展出晶片級封裝(Chip Scale Package,簡稱CSP)的技術。 With the rapid development of the electronics industry, electronic products are gradually moving towards multi-functional and high-performance trends. In order to meet the packaging requirements of miniaturization of electronic packages, a technology of Chip Scale Package (CSP) has been developed.

第1A至1E圖係為習知半導體封裝件1之製法之剖面示意圖。 1A to 1E are schematic cross-sectional views showing a manufacturing method of a conventional semiconductor package 1.

如第1A圖所示,形成一熱化離形膠層(thermal release tape)100於一承載件10上。 As shown in FIG. 1A, a thermal release tape 100 is formed on a carrier 10.

接著,置放複數半導體晶片11於該熱化離形膠層100上,該些半導體晶片11具有相對之作用面11a與非作用面11b,各該作用面11a上均具有複數電極墊110,且各該作用面11a黏著於該熱化離形膠層100上。 Next, a plurality of semiconductor wafers 11 are disposed on the thermalized release layer 100. The semiconductor wafers 11 have opposite active and non-active surfaces 11a, each of which has a plurality of electrode pads 110 thereon. Each of the active surfaces 11a is adhered to the heated release layer 100.

如第1B圖所示,形成一封裝膠體14於該熱化離形膠層100上,以包覆該半導體晶片11。 As shown in FIG. 1B, an encapsulant 14 is formed on the thermal release layer 100 to coat the semiconductor wafer 11.

如第1C圖所示,烘烤該封裝膠體14以硬化該熱化離形膠層100而移除該熱化離形膠層100與該承載件10,使該半導體晶片11之作用面11a外露。 As shown in FIG. 1C, the encapsulant 14 is baked to harden the thermal release layer 100 to remove the thermal release layer 100 and the carrier 10, so that the active surface 11a of the semiconductor wafer 11 is exposed. .

如第1D圖所示,形成一線路結構16於該封裝膠體14與該半導體晶片11之作用面11a上,令該線路結構16電性連接該電極墊110。接著,形成一絕緣保護層18於該線路結構16上,且該絕緣保護層18外露該線路結構16之部分表面,以供結合如銲球之導電元件17。 As shown in FIG. 1D, a wiring structure 16 is formed on the encapsulating body 14 and the active surface 11a of the semiconductor wafer 11, so that the wiring structure 16 is electrically connected to the electrode pad 110. Next, an insulating protective layer 18 is formed on the wiring structure 16, and the insulating protective layer 18 exposes a portion of the surface of the wiring structure 16 for bonding the conductive elements 17 such as solder balls.

如第1E圖所示,沿如第1D圖所示之切割路徑L進行切單製程,以獲取複數個CSP封裝結構之半導體封裝件1,俾供電性連接於電路板(Mother Board)上。 As shown in FIG. 1E, a singulation process is performed along the dicing path L as shown in FIG. 1D to obtain a plurality of CSP package structure semiconductor packages 1 which are electrically connected to a Motherboard.

惟,習知半導體封裝件1為了符合終端產品之多功能及高功效之需求,故於切單製程時,係將複數個半導體晶片11形成於同一平面上(如第1E圖所示),因而使整體封裝結構之平面面積過大,故難以縮小終端產品之體積。 However, in order to meet the versatility and high efficiency requirements of the terminal product, the conventional semiconductor package 1 is formed by forming a plurality of semiconductor wafers 11 on the same plane during the singulation process (as shown in FIG. 1E). The planar area of the overall package structure is too large, so it is difficult to reduce the volume of the end product.

因此,如何縮小習知多晶片之半導體封裝件的體積,實已成目前亟欲解決的課題。 Therefore, how to reduce the volume of a conventional multi-chip semiconductor package has become a problem to be solved.

鑒於上述習知技術之缺失,本發明提供一種電子封裝件,係包括:第一線路結構,係具有相對之第一側與第二側;複數導電柱,係形成於該第一線路結構之第二側上且電性連接該第一線路結構;第一電子元件,係設於該第一線路結構之第一側上;封裝層,係包覆該第一電子元件;第二電子 元件,係設於該第一線路結構之第二側上;包覆層,係包覆該第二電子元件與該導電柱;以及第二線路結構,係形成於該包覆層上且電性連接該導電柱與該第二電子元件。 In view of the above-mentioned prior art, the present invention provides an electronic package comprising: a first line structure having opposite first and second sides; and a plurality of conductive columns formed in the first line structure The first circuit structure is electrically connected to the first circuit structure; the first electronic component is disposed on the first side of the first circuit structure; the encapsulation layer is coated with the first electronic component; and the second electronic component is The second layer is disposed on the second side of the first circuit structure; the cladding layer covers the second electronic component and the conductive pillar; and the second circuit structure is formed on the cladding layer and electrically connected to the conductive layer a post and the second electronic component.

本發明亦提供一種電子封裝件之製法,係包括:提供一封裝構件,係包含有具相對之第一側與第二側之第一線路結構、設於該第一線路結構之第一側上之第一電子元件及包覆該第一電子元件之封裝層;於該第一線路結構之第二側上設置第二電子元件且形成複數電性連接該第一線路結構之導電柱;以包覆層包覆該第二電子元件與該導電柱;以及於該包覆層上形成電性連接該導電柱與該第二電子元件之第二線路結構。 The invention also provides a method for manufacturing an electronic package, comprising: providing a package member, comprising a first line structure having a first side and a second side opposite to each other, disposed on a first side of the first line structure a first electronic component and an encapsulation layer encapsulating the first electronic component; a second electronic component is disposed on the second side of the first circuit structure, and a plurality of electrically conductive columns electrically connected to the first circuit structure are formed; Coating a second electronic component and the conductive pillar; and forming a second wiring structure electrically connected to the conductive pillar and the second electronic component on the cladding layer.

本發明另提供一種電子封裝件之製法,係包括:提供一封裝構件,係包含有具相對之第一側與第二側之第一線路結構、設於該第一線路結構之第一側上之第一電子元件及包覆該第一電子元件之封裝層;於該第一線路結構之第二側上設置第二電子元件,並形成包覆該第二電子元件且具複數穿孔之包覆層;於該穿孔中形成電性連接該第一線路結構之導電柱;以及於該包覆層上形成電性連接該導電柱與該第二電子元件之第二線路結構。 The invention further provides a method for manufacturing an electronic package, comprising: providing a package member, comprising a first line structure having a first side and a second side opposite to each other, disposed on a first side of the first line structure a first electronic component and an encapsulation layer encapsulating the first electronic component; a second electronic component disposed on the second side of the first circuit structure; and forming a cladding covering the second electronic component and having a plurality of perforations a conductive pillar electrically connected to the first wiring structure is formed in the through hole; and a second wiring structure electrically connecting the conductive pillar and the second electronic component is formed on the cladding layer.

前述之電子封裝件及其製法中,該第一線路結構係包含有導電盲孔,以電性連接該第一電子元件。 In the foregoing electronic package and method of manufacturing the same, the first circuit structure includes a conductive blind via to electrically connect the first electronic component.

前述之電子封裝件及其製法中,該第一電子元件係為主動元件、被動元件或其二者組合。 In the foregoing electronic package and method of manufacturing the same, the first electronic component is an active component, a passive component, or a combination thereof.

前述之電子封裝件及其製法中,該第一電子元件之一 表面係外露於該封裝層。 In the above electronic package and method of manufacturing the same, one of the surfaces of the first electronic component is exposed to the encapsulation layer.

前述之電子封裝件及其製法中,該第一電子元件與該第二電子元件具有相對之作用面與非作用面,該第一電子元件之作用面與該第二電子元件之作用面係朝相同方向。 In the above electronic package and the method of manufacturing the same, the first electronic component and the second electronic component have opposite active and non-active surfaces, and the active surface of the first electronic component and the active surface of the second electronic component The same direction.

前述之電子封裝件及其製法中,該第二電子元件係為主動元件、被動元件或其二者組合。 In the foregoing electronic package and method of manufacturing the same, the second electronic component is an active component, a passive component, or a combination thereof.

前述之電子封裝件及其製法中,該第二線路結構係包含有導電盲孔,以電性連接該第二電子元件及該導電柱。 In the above electronic package and method of manufacturing the same, the second circuit structure includes a conductive via hole for electrically connecting the second electronic component and the conductive pillar.

前述之電子封裝件及其製法中,復包括形成複數導電元件於該第二線路結構上。 In the foregoing electronic package and method of manufacturing the same, the method further comprises forming a plurality of conductive elements on the second line structure.

由上可知,本發明之電子封裝件及其製法,主要藉由該第一線路結構之第一側與第二側上分別設有第一電子元件與第二電子元件,以形成立體式堆疊設計,故相較於習知半導體封裝件之多晶片平面佈設之設計,本發明可大幅縮小該電子封裝件之平面面積,且符合多功能及高功效之需求。 It can be seen that the electronic package of the present invention and the method for manufacturing the same are mainly provided with a first electronic component and a second electronic component on the first side and the second side of the first circuit structure to form a three-dimensional stacked design. Therefore, compared with the design of the multi-wafer plane layout of the conventional semiconductor package, the invention can greatly reduce the planar area of the electronic package and meet the requirements of multifunctionality and high efficiency.

1‧‧‧半導體封裝件 1‧‧‧Semiconductor package

10‧‧‧承載件 10‧‧‧ Carrier

100‧‧‧熱化離形膠層 100‧‧‧heating release layer

11‧‧‧半導體晶片 11‧‧‧Semiconductor wafer

11a,21a,22a‧‧‧作用面 11a, 21a, 22a‧‧‧ action surface

11b,21b,22b‧‧‧非作用面 11b, 21b, 22b‧‧‧ non-active surface

110,210,210’,220‧‧‧電極墊 110,210,210',220‧‧‧electrode pads

14‧‧‧封裝膠體 14‧‧‧Package colloid

16‧‧‧線路結構 16‧‧‧Line structure

17,27‧‧‧導電元件 17,27‧‧‧Conducting components

18,28‧‧‧絕緣保護層 18,28‧‧‧Insulating protective layer

2‧‧‧電子封裝件 2‧‧‧Electronic package

2a‧‧‧封裝構件 2a‧‧‧Package components

20‧‧‧第一線路結構 20‧‧‧First line structure

20a‧‧‧第一側 20a‧‧‧ first side

20b‧‧‧第二側 20b‧‧‧ second side

200‧‧‧第一絕緣層 200‧‧‧First insulation

201‧‧‧第一線路重佈層 201‧‧‧First line redistribution

202‧‧‧第一導電盲孔 202‧‧‧First conductive blind hole

21,21’‧‧‧第一電子元件 21, 21' ‧ ‧ first electronic components

22‧‧‧第二電子元件 22‧‧‧Second electronic components

221‧‧‧結合層 221‧‧‧bonding layer

222‧‧‧導電體 222‧‧‧Electrical conductor

23‧‧‧導電柱 23‧‧‧conductive column

24,24’‧‧‧封裝層 24,24’‧‧‧Encapsulation layer

25‧‧‧包覆層 25‧‧‧Cladding

250‧‧‧穿孔 250‧‧‧Perforation

251‧‧‧盲孔 251‧‧ ‧ blind holes

26‧‧‧第二線路結構 26‧‧‧Second line structure

260,260’‧‧‧第二絕緣層 260,260'‧‧‧Second insulation

261,261’‧‧‧第二線路重佈層 261,261’‧‧‧Second line redistribution

262‧‧‧第二導電盲孔 262‧‧‧Second conductive blind hole

270‧‧‧凸塊底下金屬層 270‧‧‧ Metal layer under the bump

280‧‧‧開孔 280‧‧‧ openings

L,S‧‧‧切割路徑 L, S‧‧‧ cutting path

第1A至1E圖係為習知半導體封裝件之製法之剖面示意圖;第2A至2E圖係為本發明之電子封裝件之製法的剖面示意圖;第2C’圖係為第2C圖之另一實施例的剖面示意圖;以及第2E’圖係為第2E圖之另一實施例的剖面示意圖。 1A to 1E are schematic cross-sectional views showing a method of fabricating a conventional semiconductor package; 2A to 2E are schematic cross-sectional views showing a method of fabricating the electronic package of the present invention; and FIG. 2C' is another embodiment of FIG. 2C A schematic cross-sectional view of an example; and a 2E' diagram is a schematic cross-sectional view of another embodiment of FIG. 2E.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "first", "second" and "one" are used in the description, and are not intended to limit the scope of the invention. Changes or adjustments in the relative relationship are considered to be within the scope of the present invention.

第2A至2E圖係為本發明之電子封裝件2之製法的剖面示意圖。 2A to 2E are schematic cross-sectional views showing the manufacturing method of the electronic package 2 of the present invention.

如第2A圖所示,提供一封裝構件2a,其包含一第一線路結構20、至少一第一電子元件21,21’及一封裝層24。 As shown in Fig. 2A, a package member 2a is provided which includes a first wiring structure 20, at least one first electronic component 21, 21' and an encapsulation layer 24.

於本實施例中,該封裝構件2a之製法可參考如第1A至1E圖所示之製法,但不限於此述。 In the present embodiment, the method of fabricating the package member 2a can be referred to the method as shown in FIGS. 1A to 1E, but is not limited thereto.

所述之第一線路結構20具有相對之第一側20a與第二側20b。於本實施例中,該第一線路結構20係包括至少一第一絕緣層200、設於該第一絕緣層200上之一第一線路 重佈層(redistribution layer,簡稱RDL)201、及複數設於該第一絕緣層200中並電性連接該第一線路重佈層201之第一導電盲孔202。例如,形成該第一線路重佈層201與該第一導電盲孔202之材質係為銅,且形成該第一絕緣層200之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。 The first line structure 20 has a first side 20a and a second side 20b opposite to each other. In this embodiment, the first circuit structure 20 includes at least one first insulating layer 200, a first redistribution layer (RDL) 201 disposed on the first insulating layer 200, and a plurality of The first conductive blind hole 202 is electrically connected to the first conductive layer 200 and electrically connected to the first conductive blind via 201. For example, the material forming the first circuit redistribution layer 201 and the first conductive blind via 202 is copper, and the material forming the first insulating layer 200 is, for example, polybenzoxazole (PBO). A dielectric material such as polyimide (PI) or prepreg (PP).

再者,於該第一線路結構20之第二側20b上可選擇性地形成一如防銲層之絕緣保護層28,且於該絕緣保護層28中形成複數開孔280。 Furthermore, an insulating protective layer 28 such as a solder resist layer is selectively formed on the second side 20b of the first wiring structure 20, and a plurality of openings 280 are formed in the insulating protective layer 28.

所述之第一電子元件21,21’係結合於該第一線路結構20之第一側20a上。於本實施例中,該第一電子元件21,21’係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,若該第一電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,該作用面21a具有複數電極墊210以電性連接該第一導電盲孔202。若該第一電子元件21’係為被動元件,其具有複數電極墊210’以電性連接該第一導電盲孔202。 The first electronic component 21, 21' is bonded to the first side 20a of the first line structure 20. In this embodiment, the first electronic component 21, 21' is an active component, a passive component or a combination thereof, and the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor. For example, if the first electronic component 21 is a semiconductor wafer, it has an opposite active surface 21a and an inactive surface 21b. The active surface 21a has a plurality of electrode pads 210 for electrically connecting the first conductive blind vias 202. If the first electronic component 21' is a passive component, it has a plurality of electrode pads 210' to electrically connect the first conductive vias 202.

所述之封裝層24係形成於該第一線路結構20之第一側20a上,以包覆該些第一電子元件21,21’。於本實施例中,該封裝層24係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(expoxy)環氧樹脂之封裝膠體或封裝材(molding compound),其可用壓合 (lamination)或模壓(molding)之方式形成於該第一線路結構20之第一側20a上。 The encapsulation layer 24 is formed on the first side 20a of the first line structure 20 to cover the first electronic components 21, 21'. In this embodiment, the encapsulation layer 24 is an insulating material, such as a polyimide (PI), a dry film, an epoxy resin encapsulant or an encapsulant ( A molding compound, which may be formed on the first side 20a of the first wiring structure 20 by lamination or molding.

如第2B圖所示,利用該封裝構件2a作為支撐結構,設置第二電子元件22於該封裝構件2a之第一線路結構20之第二側20b(或該絕緣保護層28)上,且於該第一線路結構20之第二側20b上形成複數電性連接該第一線路結構20之導電柱23。 As shown in FIG. 2B, the second electronic component 22 is disposed on the second side 20b (or the insulating protective layer 28) of the first line structure 20 of the package member 2a by using the package member 2a as a support structure, and A plurality of conductive posts 23 electrically connected to the first line structure 20 are formed on the second side 20b of the first line structure 20.

於本實施例中,該導電柱23係設於該開孔280中之第一線路重佈層201上並電性連接該第一線路重佈層201,且形成該導電柱23之材質係為如銅之金屬材或銲錫材。 In this embodiment, the conductive pillars 23 are disposed on the first circuit redistribution layer 201 in the opening 280 and electrically connected to the first circuit redistribution layer 201, and the material of the conductive pillars 23 is Such as copper metal or solder.

再者,該第二電子元件22係為主動元件、被動元件或其二者組合,且該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。例如,該第二電子元件22係為半導體晶片,其具有相對之作用面22a與非作用面22b,該第二電子元件22係以其非作用面22b藉由一結合層221黏固於該第一線路結構20之第二側20b上,而該作用面22a具有複數電極墊220,且該些電極墊220上係結合並電性連接複數導電體222。具體地,該導電體222係為如銲球之圓球狀、或如銅柱、銲錫凸塊等金屬材之柱狀、或銲線機製作之釘狀(stud),但不限於此。 Furthermore, the second electronic component 22 is an active component, a passive component or a combination thereof, and the active component is, for example, a semiconductor wafer, and the passive component is, for example, a resistor, a capacitor, and an inductor. For example, the second electronic component 22 is a semiconductor wafer having an opposite active surface 22a and an inactive surface 22b. The second electronic component 22 is adhered to the non-active surface 22b by a bonding layer 221. On the second side 20b of the circuit structure 20, the active surface 22a has a plurality of electrode pads 220, and the electrode pads 220 are bonded and electrically connected to the plurality of electrical conductors 222. Specifically, the conductor 222 is in the shape of a ball of a solder ball, or a columnar shape of a metal material such as a copper post or a solder bump, or a stud made by a wire bonding machine, but is not limited thereto.

再者,該些導電體222可依需求與該些導電柱23一同製作或分開製作。 Moreover, the electrical conductors 222 can be fabricated or separately fabricated together with the conductive pillars 23 as needed.

如第2C圖所示,形成一包覆層25於該第一線路結構20之第二側20b(或該絕緣保護層28)上,以令該包覆層 25包覆該第二電子元件22、該些導電體222與該些導電柱23,再藉由整平製程,令該包覆層25之上表面齊平該些導電柱23之端面與該些導電體222之上表面,使該些導電柱23之端面與該些導電體222之上表面外露出該包覆層25。 As shown in FIG. 2C, a cladding layer 25 is formed on the second side 20b (or the insulating protective layer 28) of the first wiring structure 20, so that the cladding layer 25 covers the second electronic component 22. The conductive body 222 and the conductive pillars 23 are further flattened so that the upper surface of the cladding layer 25 is flush with the end faces of the conductive pillars 23 and the upper surfaces of the conductive bodies 222. The cladding layer 25 is exposed on the end surfaces of the conductive pillars 23 and the upper surfaces of the conductors 222.

於本實施例中,該包覆層25係為絕緣材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(expoxy)環氧樹脂之封裝膠體或封裝材(molding compound),其可用壓合(lamination)或模壓(molding)之方式形成於該第一線路結構20之第二側20b上,且該包覆層25之材質與該封裝層24之材質可相同或不相同。 In this embodiment, the cladding layer 25 is an insulating material, such as a polyimide (PI), a dry film, an epoxy resin, or an encapsulant. (molding compound), which may be formed on the second side 20b of the first circuit structure 20 by lamination or molding, and the material of the cladding layer 25 and the material of the encapsulation layer 24 may be Same or different.

再者,該整平製程係藉由研磨方式,移除該包覆層25之部分材質(依需求,可移除該導電柱23,甚或該導電體222之部分材質)。 Moreover, the leveling process removes part of the material of the cladding layer 25 by grinding (the conductive pillar 23 or even part of the conductor 222 may be removed as needed).

應可理解地,如第2C’圖所示,亦可先於該第一線路結構20之第二側20b上形成該包覆層25,並於該包覆層25中形成複數穿孔250與複數盲孔251,以令該第二側20b之第一線路重佈層201之部分表面外露於該些穿孔250,且令該些電極墊220外露於該些盲孔251,之後,例如以電鍍或沉積方式,形成該導電柱23於該穿孔250中,且形成該導電體222於該盲孔251中,以形成如第2C圖所示之構造。 It should be understood that, as shown in FIG. 2C', the cladding layer 25 may be formed on the second side 20b of the first circuit structure 20, and the plurality of vias 250 and the plurality of vias 250 may be formed in the cladding layer 25. The blind hole 251 is formed such that a part of the surface of the first circuit redistribution layer 201 of the second side 20b is exposed to the through holes 250, and the electrode pads 220 are exposed to the blind holes 251, and then, for example, by electroplating or In the deposition mode, the conductive pillar 23 is formed in the through hole 250, and the conductive body 222 is formed in the blind hole 251 to form a structure as shown in FIG. 2C.

如第2D圖所示,形成一第二線路結構26於該包覆層25上,且該第二線路結構26電性連接該些導電柱23與該些導電體222。 As shown in FIG. 2D, a second line structure 26 is formed on the cladding layer 25, and the second line structure 26 is electrically connected to the conductive pillars 23 and the conductors 222.

於本實施例中,該第二線路結構26係包括複數第二絕緣層260,260’、設於該第二絕緣層260,260’上之複數第二線路重佈層(RDL)261,261’、及複數設於該第二絕緣層260,260’中並電性連接該第二線路重佈層261,261’之第二導電盲孔262,並以部分該第二導電盲孔262電性連接該些導電柱23與該些導電體222,且最外層之第二絕緣層260’可作為防銲層,以令最外層之第二線路重佈層261’之部分表面係外露於該防銲層。或者,該第二線路結構26亦可僅包括單一第二絕緣層260及單一第二線路重佈層261。 In this embodiment, the second circuit structure 26 includes a plurality of second insulating layers 260, 260', a plurality of second line redistribution layers (RDL) 261, 261' disposed on the second insulating layer 260, 260', and a plurality of The second conductive layer 260, 260' is electrically connected to the second conductive via 262 of the second circuit redistribution layer 261, 261', and the conductive pillars 23 are electrically connected to the second conductive via 262. The conductor 222, and the outermost second insulating layer 260' can serve as a solder resist layer to expose a portion of the surface of the outermost second line redistribution layer 261' to the solder resist layer. Alternatively, the second line structure 26 may also include only a single second insulating layer 260 and a single second line redistribution layer 261.

再者,形成該第二線路重佈層261,261’與該第二導電盲孔262之材質係為銅,且形成該第二絕緣層260,260’之材質係為如聚對二唑苯(PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)之介電材。 Furthermore, the second circuit redistribution layer 261, 261' and the second conductive blind via 262 are made of copper, and the second insulating layer 260, 260' is made of, for example, poly-p-oxazobenzene (PBO). Polyimide (PI), prepreg (PP) dielectric material.

如第2E圖所示,沿如第2D圖所示之切割路徑S進行切單製程,且形成複數如銲球之導電元件27於最外層之第二線路重佈層261’上,俾供後續接置於其它結構(如封裝結構、電路板或晶片)。 As shown in FIG. 2E, a singulation process is performed along the dicing path S as shown in FIG. 2D, and a plurality of conductive elements 27 such as solder balls are formed on the second line redistribution layer 261' of the outermost layer for subsequent use. Attached to other structures (such as package structures, boards or wafers).

於本實施例中,可形成一凸塊底下金屬層(Under Bump Metallurgy,簡稱UBM)270於最外層之第二線路重佈層261’上,以利於結合該導電元件27。 In this embodiment, an under bump metallurgy (UBM) 270 may be formed on the outermost second line redistribution layer 261' to facilitate bonding of the conductive element 27.

於另一實施例中,如第2E’圖所示,可藉由整平製程(如研磨方式),令該封裝層24’之表面齊平該第一電子元件21之非作用面21b,使該第一電子元件21之非作用 面21b外露出該封裝層24’。 In another embodiment, as shown in FIG. 2E', the surface of the encapsulation layer 24' can be flushed with the non-active surface 21b of the first electronic component 21 by a leveling process (such as a polishing method). The inactive surface 21b of the first electronic component 21 exposes the encapsulation layer 24'.

因此,本發明之電子封裝件之製法係藉由該第一線路結構20之第一側20a與第二側20b上分別設有第一電子元件21,21’與第二電子元件22,以形成立體式堆疊設計,故相較於習知半導體封裝件之多晶片平面佈設之設計,本發明之製法可大幅縮小該電子封裝件2之平面面積,且符合多功能及高功效之需求。 Therefore, the electronic package of the present invention is formed by the first electronic component 21, 21' and the second electronic component 22 on the first side 20a and the second side 20b of the first circuit structure 20, respectively. Compared with the multi-wafer plane layout design of the conventional semiconductor package, the method of the present invention can greatly reduce the planar area of the electronic package 2 and meet the requirements of multifunctionality and high efficiency.

本發明亦提供一種電子封裝件2,其包括:一第一線路結構20、至少一第一電子元件21,21’、一封裝層24,24’、至少一第二電子元件22、一包覆層25以及一第二線路結構26。 The invention also provides an electronic package 2 comprising: a first circuit structure 20, at least one first electronic component 21, 21', an encapsulation layer 24, 24', at least a second electronic component 22, a cladding Layer 25 and a second line structure 26.

所述之第一線路結構20係具有相對之第一側20a與第二側20b,且該第二側20b上形成有複數電性連接該第一線路結構20之導電柱23。 The first circuit structure 20 has a first side 20a and a second side 20b opposite to each other, and the second side 20b is formed with a plurality of conductive posts 23 electrically connected to the first line structure 20.

所述之第一電子元件21,21’係結合於該第一線路結構20之第一側20a上。 The first electronic component 21, 21' is bonded to the first side 20a of the first line structure 20.

所述之封裝層24,24’係形成於該第一線路結構20之第一側20a上,以令該封裝層24,24’包覆該第一電子元件21,21’。 The encapsulation layers 24, 24' are formed on the first side 20a of the first wiring structure 20 such that the encapsulation layers 24, 24' envelop the first electronic components 21, 21'.

所述之第二電子元件22係設於該第一線路結構20之第二側20b上。 The second electronic component 22 is disposed on the second side 20b of the first line structure 20.

所述之包覆層25係形成於該第一線路結構20之第二側20b上,以包覆該第二電子元件22與該些導電柱23,且令該導電柱23之端面外露於該包覆層25。 The cover layer 25 is formed on the second side 20b of the first circuit structure 20 to cover the second electronic component 22 and the conductive pillars 23, and expose the end surface of the conductive pillar 23 to the Coating layer 25.

所述之第二線路結構26係形成於該包覆層25上,且該第二線路結構26電性連接該導電柱23與該第二電子元件22(或該導電體222)。 The second circuit structure 26 is formed on the cladding layer 25, and the second circuit structure 26 is electrically connected to the conductive pillar 23 and the second electronic component 22 (or the conductor 222).

於一實施例中,該第一線路結構20係包含有複數第一導電盲孔202,以電性連接該第一電子元件21,21’。 In one embodiment, the first circuit structure 20 includes a plurality of first conductive vias 202 for electrically connecting the first electronic components 21, 21'.

於一實施例中,該第一電子元件21,21’係為主動元件、被動元件或其二者組合。 In one embodiment, the first electronic component 21, 21' is an active component, a passive component, or a combination thereof.

於一實施例中,該第一電子元件21之非作用面21b外露出該封裝層24’。 In one embodiment, the inactive surface 21b of the first electronic component 21 exposes the encapsulation layer 24'.

於一實施例中,該第一電子元件21之作用面21a與該第二電子元件22之作用面22a係朝相同方向。 In an embodiment, the active surface 21a of the first electronic component 21 and the active surface 22a of the second electronic component 22 are oriented in the same direction.

於一實施例中,該第二電子元件22係為主動元件、被動元件或其二者組合。 In an embodiment, the second electronic component 22 is an active component, a passive component, or a combination thereof.

於一實施例中,該第二線路結構26係包含有複數第二導電盲孔262,以電性連接該第二電子元件22與該導電柱23。 In an embodiment, the second circuit structure 26 includes a plurality of second conductive vias 262 for electrically connecting the second electronic component 22 and the conductive pillars 23 .

於一實施例中,該電子封裝件2復包括複數導電元件27,係形成於該第二線路結構26上並電性連接該第二線路結構26。 In one embodiment, the electronic package 2 includes a plurality of conductive elements 27 formed on the second line structure 26 and electrically connected to the second line structure 26 .

綜上所述,本發明之電子封裝件及其製法,係藉由該第一線路結構之第一側與第二側上分別設有第一電子元件與第二電子元件,以形成立體式堆疊設計,故能大幅縮小該電子封裝件之平面面積,且符合多功能及高功效之需求。 In summary, the electronic package of the present invention is formed by first and second electronic components on the first side and the second side of the first circuit structure to form a three-dimensional stack. The design can greatly reduce the planar area of the electronic package and meet the requirements of versatility and high efficiency.

上述實施例係用以例示性說明本發明之原理及其功 效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are intended to illustrate the principles of the invention and its advantages, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

Claims (19)

一種電子封裝件,係包括:第一線路結構,係具有相對之第一側與第二側;複數導電柱,係形成於該第一線路結構之第二側上且電性連接該第一線路結構;第一電子元件,係設於該第一線路結構之第一側上;封裝層,係包覆該第一電子元件;第二電子元件,係設於該第一線路結構之第二側上;包覆層,係包覆該第二電子元件與該導電柱;以及第二線路結構,係形成於該包覆層上且電性連接該導電柱與該第二電子元件。  An electronic package includes: a first circuit structure having opposite first and second sides; and a plurality of conductive pillars formed on a second side of the first circuit structure and electrically connected to the first line a first electronic component disposed on a first side of the first circuit structure; an encapsulation layer encapsulating the first electronic component; and a second electronic component disposed on a second side of the first circuit structure a cladding layer covering the second electronic component and the conductive pillar; and a second wiring structure formed on the cladding layer and electrically connecting the conductive pillar and the second electronic component.   如申請專利範圍第1項所述之電子封裝件,其中,該第一線路結構係包含有複數電性連接該第一電子元件之導電盲孔。  The electronic package of claim 1, wherein the first circuit structure comprises a plurality of conductive blind holes electrically connected to the first electronic component.   如申請專利範圍第1項所述之電子封裝件,其中,該第一電子元件係為主動元件、被動元件或其二者組合。  The electronic package of claim 1, wherein the first electronic component is an active component, a passive component, or a combination thereof.   如申請專利範圍第1項所述之電子封裝件,其中,該第一電子元件之一表面係外露出該封裝層。  The electronic package of claim 1, wherein the surface of one of the first electronic components exposes the encapsulation layer.   如申請專利範圍第1項所述之電子封裝件,其中,該第一電子元件與該第二電子元件具有相對之作用面與非作用面,且該第一電子元件之作用面與該第二電子元件之作用面係朝相同方向。  The electronic package of claim 1, wherein the first electronic component and the second electronic component have opposite active and non-active surfaces, and the active surface of the first electronic component and the second The active surfaces of the electronic components are oriented in the same direction.   如申請專利範圍第1項所述之電子封裝件,其中,該第二電子元件係為主動元件、被動元件或其二者組合。  The electronic package of claim 1, wherein the second electronic component is an active component, a passive component, or a combination thereof.   如申請專利範圍第1項所述之電子封裝件,其中,該第二線路結構係包含有複數電性連接該第二電子元件之導電盲孔。  The electronic package of claim 1, wherein the second circuit structure comprises a plurality of conductive blind holes electrically connected to the second electronic component.   如申請專利範圍第1項所述之電子封裝件,其中,該第二線路結構係包含有複數電性連接該導電柱之導電盲孔。  The electronic package of claim 1, wherein the second circuit structure comprises a plurality of conductive blind holes electrically connected to the conductive pillar.   如申請專利範圍第1項所述之電子封裝件,復包括複數形成於該第二線路結構上之導電元件。  The electronic package of claim 1, further comprising a plurality of conductive elements formed on the second line structure.   一種電子封裝件之製法,係包括:提供一封裝構件,係包含有具相對之第一側與第二側之第一線路結構、設於該第一線路結構之第一側上之第一電子元件及包覆該第一電子元件之封裝層;於該第一線路結構之第二側上設置第二電子元件且形成複數電性連接該第一線路結構之導電柱;以包覆層包覆該第二電子元件與該導電柱;以及於該包覆層上形成電性連接該導電柱與該第二電子元件之第二線路結構。  An electronic package manufacturing method includes: providing a package member, comprising a first line structure having a first side and a second side opposite to each other, and a first electron disposed on a first side of the first line structure An element and an encapsulation layer encapsulating the first electronic component; a second electronic component is disposed on the second side of the first circuit structure; and a plurality of conductive pillars electrically connected to the first circuit structure are formed; The second electronic component and the conductive pillar; and a second wiring structure electrically connected to the conductive pillar and the second electronic component is formed on the cladding layer.   一種電子封裝件之製法,係包括:提供一封裝構件,係包含有具相對之第一側與第二側之第一線路結構、設於該第一線路結構之第一側上之第一電子元件及包覆該第一電子元件之封裝層;於該第一線路結構之第二側上設置第二電子元件; 於該第一線路結構之第二側上形成包覆該第二電子元件且具複數穿孔之包覆層;該穿孔中形成電性連接該第一線路結構之導電柱;以及於該包覆層上形成電性連接該導電柱與該第二電子元件之第二線路結構。  An electronic package manufacturing method includes: providing a package member, comprising a first line structure having a first side and a second side opposite to each other, and a first electron disposed on a first side of the first line structure An element and an encapsulation layer encapsulating the first electronic component; a second electronic component disposed on a second side of the first circuit structure; and a second electronic component is formed on the second side of the first circuit structure a plurality of perforated cladding layers; forming a conductive pillar electrically connected to the first wiring structure; and forming a second wiring structure electrically connected to the conductive pillar and the second electronic component on the cladding layer.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第一線路結構係包含有複數電性連接該第一電子元件之導電盲孔。  The method of manufacturing the electronic package of claim 10, wherein the first circuit structure comprises a plurality of conductive blind holes electrically connected to the first electronic component.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第一電子元件係為主動元件、被動元件或其二者組合。  The method of manufacturing an electronic package according to claim 10, wherein the first electronic component is an active component, a passive component, or a combination thereof.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第一電子元件之一表面係外露出該封裝層。  The method of manufacturing an electronic package according to claim 10, wherein the surface of one of the first electronic components exposes the encapsulation layer.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第一電子元件與該第二電子元件具有相對之作用面與非作用面,且該第一電子元件之作用面與該第二電子元件之作用面係朝相同方向。  The method of manufacturing the electronic package of claim 10 or 11, wherein the first electronic component and the second electronic component have opposite active and non-active surfaces, and the active surface of the first electronic component The acting surfaces of the second electronic component are oriented in the same direction.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第二電子元件係為主動元件、被動元件或其二者組合。  The method of manufacturing an electronic package according to claim 10, wherein the second electronic component is an active component, a passive component, or a combination thereof.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第二線路結構係包含有複數電性連接該第二電子元件之導電盲孔。  The method of manufacturing the electronic package of claim 10, wherein the second circuit structure comprises a plurality of conductive blind holes electrically connected to the second electronic component.   如申請專利範圍第10或11項所述之電子封裝件之製法,其中,該第二線路結構係包含有複數電性連接該導電柱之導電盲孔。  The method of manufacturing the electronic package of claim 10, wherein the second circuit structure comprises a plurality of conductive blind holes electrically connected to the conductive pillar.   如申請專利範圍第10或11項所述之電子封裝件之製法,復包括形成複數導電元件於該第二線路結構上。  The method of manufacturing an electronic package according to claim 10 or 11, further comprising forming a plurality of conductive elements on the second line structure.  
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