TW201819691A

TW201819691A - Electrolytic treatment tool, method for manufacturing electrolytic treatment tool, and electrolytic treatment device

Info

Publication number: TW201819691A
Application number: TW106133045A
Authority: TW
Inventors: 星野智久; 田正人
Original assignee: 日商東京威力科創股份有限公司
Priority date: 2016-10-12
Filing date: 2017-09-27
Publication date: 2018-06-01
Also published as: WO2018070188A1

Abstract

This electrolytic treatment tool, which uses a treatment liquid supplied to a substrate to be processed and performs an electrolytic treatment on the substrate to be processed, has: a base body having a planar shape, a recessed part formed on the outer surface thereof, and a through-hole formed penetrating from the rear surface thereof to the recessed part; and an electrode component provided by being embedded into at least the recessed part. The electrode component is provided with a direct electrode for coming into contact with the treatment liquid and applying a voltage between the electrode component and the substrate to be processed, and direct electrode wiring connected to the direct electrode is provided inside the through-hole.

Description

Electrolytic treatment jig, manufacturing method of electrolytic treatment jig, and electrolytic treatment device

[0001] 本發明係有關使用被供給到被處理基板之處理液，對該被處理基板進行電解處理之電解處理治具、前述電解處理治具之製造方法、及具備前述電解處理治具之電解處理裝置。[0001] The present invention relates to an electrolytic treatment jig for electrolytically treating a substrate to be processed using a processing liquid supplied to the substrate to be processed, a method for manufacturing the aforementioned electrolytic processing jig, and electrolysis provided with the aforementioned electrolytic processing jig. Processing device.

[0002] 電解過程(電解處理)，係用於電鍍處理或蝕刻處理等種種處理之技術。例如在半導體裝置之製造步驟，也會進行電解處理。　　[0003] 上述之電鍍處理，從前，係例如以專利文獻1記載之電鍍裝置來進行。在電鍍裝置，在電鍍處理杯狀物內，配置例如將白金形成網目狀的構成的陽極電極，再者，在陽極電極對面配置的半導體晶圓，則被配置成該電鍍處理面是朝向下方。此外，支撐半導體晶圓之支撐部，係構成連接在該半導體晶圓之陰極電極。於是，向著半導體晶圓的電鍍處理面，藉由在電鍍處理杯狀物內通過陽極電極使電鍍液噴流來進行半導體晶圓的電鍍處理。　　[0004] 此外，在專利文獻1記載之電鍍裝置設置超音波振動件，藉由將從該超音波振動件發振之超音波傳到電鍍液，來攪拌電鍍液。藉此，謀求提升電鍍處理之均一性。 [先前技術文獻] [專利文獻] 　　[0005] 　　[專利文獻1] 日本特開2004-250747號公報[0002] The electrolytic process (electrolytic process) is a technique used for various processes such as plating process or etching process. For example, in a semiconductor device manufacturing step, electrolytic treatment is also performed. [0003] The above-mentioned electroplating treatment was performed, for example, with an electroplating apparatus described in Patent Document 1. In the electroplating apparatus, an anode electrode having a mesh-like configuration of platinum is arranged in the plating treatment cup, and a semiconductor wafer disposed opposite to the anode electrode is arranged such that the plating treatment surface faces downward. In addition, a supporting portion that supports a semiconductor wafer constitutes a cathode electrode connected to the semiconductor wafer. Then, the plating process of the semiconductor wafer is performed by spraying the plating solution through the anode electrode in the plating processing cup toward the plating processing surface of the semiconductor wafer. [0004] In addition, the electroplating apparatus described in Patent Document 1 is provided with an ultrasonic vibrator, and the ultrasonic wave oscillated from the ultrasonic vibrator is transmitted to a plating solution to stir the plating solution. Therefore, the uniformity of the plating process is sought to be improved. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2004-250747

[發明所欲解決之課題] 　　[0006] 然而，使用專利文獻1所記載之電鍍處理裝置之場合，由於是使電鍍液噴流之構成，而複雜化該裝置構成。此外，為了實現提高電鍍處理的均一性，供攪拌電鍍液用之超音波振動件為必要，大規模的攪拌手段為必要的。於是，由於依此方式使裝置構成複雜，而該裝置之製造也很煩雜。　　[0007] 本發明有鑑於該點，其目的在於可以用簡易的裝置構成有效率且適切地進行對被處理基板之電解處理。 [供解決課題之手段] 　　[0008] 為達成前述目的，本發明係一種使用被供給到被處理基板的處理液，對該被處理基板進行電解處理之電解處理治具，其特徵係具有：具有平板形狀、在表面形成凹窪部、且形成從背面連通到前述凹窪部的貫通孔之基體，與被設置嵌入至少前述凹窪部之電極零件；前述電極零件，係具備供接觸到前述處理液，並於與前述被處理基板之間施加電壓用之直接電極；在前述貫通孔的內部，設置連接到前述直接電極之直接電極用配線。　　[0009] 根據本發明，藉由以直接電極接觸到處理液之方式配置電解處理治具，對直接電極與被處理基板之間施加電壓，而可以對該被處理基板適切地進行電解處理。此外，本發明之電解處理治具，由於不需要如從前方式使處理液噴流之構成，進而供攪拌處理液用之大規模的手段，而可以簡易化裝置構成。　　[0010] 在此，在製造電解處理治具時，將電極直接設置在基體之場合，連接到該電極之配線或電性電路之繞拉變得複雜，有必要大規模的加工。此外，在使用處理液之場合有配線或電性電路遭受損傷之虞，並未最適化。　　[0011] 該點，根據本發明，可以藉由個別地製作基體與電極零件、將電極零件嵌入基體，而容易地製造電解處理治具。此外，也可以容易地進行維修電解處理治具。從而，可以低廉化電解處理治具的製造成本或維修成本，再者可以縮短製造期間或維修期間。於是，可以在使用處理液之電解處理，採用最適的電解處理治具。　　[0012] 此外，在本發明之電解處理治具，可以在基體僅形成凹窪部與貫通孔，就能維持電解處理治具的形狀保持上充分的剛性、強度。再者，可以僅將具備直接電極之電極零件嵌入基體、在貫通孔的內部設置直接電極用配線，而不需要複雜繞拉配線。　　[0013] 前述電極零件，最好是進而具有被設置絕緣於前述處理液、供在該處理液形成電場用之間接電極。　　[0014] 在前述貫通孔的內部，最好是設置連接到前述間接電極之間接電極用配線；前述間接電極用配線，係設置成介著絕緣體而覆蓋前述直接電極用配線的周圍。　　[0015] 在前述電極零件與前述凹窪部之間最好是設置密封構件。　　[0016] 前述電解處理治具，最好是進而具有被設置嵌入至少前述凹窪部之端子零件；前述端子零件，係具備供接觸到前述被處理基板，並於該被處理基板與前述直接電極之間施加電壓用之端子。　　[0017] 最好是在前述端子零件與前述凹窪部之間設置密封構件。　　[0018] 前述電解處理治具，最好是進而具有被設置嵌入至少前述凹窪部之流體供給零件；在前述流體供給零件，形成從表面貫通到背面、使流體流通之流通路。　　[0019] 根據不同觀點之本發明，係一種使用被供給到被處理基板的處理液，對該被處理基板進行電解處理之電解處理治具之製造方法，其特徵係具有：對具有平板形狀的基體，在表面形成凹窪部、而且形成從背面連通到前述凹窪部的貫通孔之第1步驟，與在至少前述凹窪部設置嵌入電極零件之第2步驟；前述電極零件，係具備供接觸到前述處理液，並於與前述被處理基板之間施加電壓用之直接電極；在前述第2步驟，在前述貫通孔的內部，設置連接到前述直接電極之直接電極用配線。　　[0020] 前述電極零件，最好是進而具備被設置絕緣於前述處理液、供在該處理液形成電場用之間接電極。　　[0021] 在前述第2步驟，最好是在前述貫通孔的內部，以介著絕緣體而覆蓋前述直接電極用配線的周圍之方式，設置連接到前述間接電極之間接電極用配線。　　[0022] 在前述第2步驟，最好是在前述電極零件與前述凹窪部之間設置密封構件。　　[0023] 前述電解處理治具之製造方法，最好是在前述第1步驟之後，進而具有將端子零件設置嵌入至少前述凹窪部之第3步驟；前述端子零件，係具備供接觸到前述被處理基板，並於該被處理基板與前述直接電極之間施加電壓用之端子。　　[0024] 在前述第3步驟，最好是在前述端子零件與前述凹窪部之間設置密封構件。　　[0025] 前述電解處理治具之製造方法，最好是在前述第1步驟之後，進而具有將流體供給零件設置嵌入至少前述凹窪部之第4步驟；在前述流體供給零件，形成從表面貫通到背面、使流體流通之流通路。　　[0026] 根據又一不同觀點之本發明，係一種對被處理基板進行電解處理之電解處理裝置，其特徵係具有：保持被處理基板之基板保持部，對被保持在前述基板保持部的被處理基板供給處理液之處理液供給部，與供對被保持在前述基板保持部的被處理基板進行電解處理用之電解處理治具；前述電解處理治具，係具有：具有平板形狀、在表面形成凹窪部、且形成從背面連通到前述凹窪部的貫通孔之基體，與被設置嵌入至少前述凹窪部之電極零件；前述電極零件，係具備供接觸到前述處理液，並於與前述被處理基板之間施加電壓用之直接電極；在前述貫通孔的內部，設置連接到前述直接電極之直接電極用配線。　　[0027] 前述電極零件，最好是進而具有被設置絕緣於前述處理液、供在該處理液形成電場用之間接電極。 [發明之效果] 　　[0028] 根據本發明，可以用簡易的裝置構成有效率且適切地進行對被處理基板之電解處理。[Problems to be Solved by the Invention] 0006 [0006] However, when the plating processing apparatus described in Patent Document 1 is used, the configuration of the apparatus is complicated because the plating solution is sprayed. In addition, in order to improve the uniformity of the plating process, an ultrasonic vibration member for stirring the plating solution is necessary, and a large-scale stirring method is necessary. Therefore, since the structure of the device is complicated in this way, the manufacturing of the device is cumbersome. [0007] The present invention has been made in view of this point, and an object thereof is to efficiently and appropriately perform electrolytic treatment on a substrate to be processed with a simple device configuration. [Means for Solving the Problems] [0008] In order to achieve the foregoing object, the present invention is an electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed. A flat plate shape, a base body having a depression formed on the surface, and a through hole communicating from the back surface to the depression, and an electrode part provided to be embedded in at least the depression; the electrode part is provided for contacting the treatment A direct electrode for applying a voltage between the liquid and the substrate to be processed; and a direct electrode wiring connected to the direct electrode is provided inside the through hole. [0009] According to the present invention, an electrolytic processing jig is disposed so that a direct electrode contacts a processing liquid, and a voltage is applied between the direct electrode and a substrate to be processed, so that the substrate to be processed can be appropriately electrolyzed. In addition, the electrolytic treatment jig of the present invention can simplify the structure of the device because it does not require a structure for spraying the treatment liquid as before, and a large-scale means for agitating the treatment liquid is also unnecessary. [0010] Here, when an electrode is directly disposed on a substrate when manufacturing an electrolytic treatment jig, the wiring to the electrode or the winding of an electrical circuit becomes complicated, and large-scale processing is necessary. In addition, there is a possibility that wiring or electrical circuits may be damaged in the case of using the treatment liquid, and it is not optimized. [0011] At this point, according to the present invention, it is possible to easily manufacture an electrolytic treatment jig by separately producing a substrate and an electrode part, and inserting the electrode part into the substrate. In addition, maintenance of the electrolytic treatment jig can be easily performed. Therefore, the manufacturing cost or the maintenance cost of the electrolytic treatment jig can be reduced, and further, the manufacturing period or the maintenance period can be shortened. Therefore, the most suitable electrolytic treatment jig can be used in the electrolytic treatment using the treatment liquid. [0012] In addition, in the electrolytic treatment jig of the present invention, only the depressions and through holes can be formed in the base body, and the rigidity and strength of the shape of the electrolytic treatment jig can be maintained sufficiently. Furthermore, it is possible to embed only electrode parts having a direct electrode in a base body and to provide a wiring for a direct electrode in a through-hole, without requiring complicated winding wiring. [0013] It is preferable that the electrode component further includes an insulative electrode which is provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [0014] It is preferable that an in-electrode wiring connected to the indirect electrode be provided inside the through hole; the indirect electrode wiring is provided so as to cover the periphery of the direct electrode wiring through an insulator. [0015] A sealing member is preferably provided between the electrode part and the depression. [0016] Preferably, the electrolytic treatment jig further has a terminal part provided to be embedded in at least the depression; the terminal part is provided with contact with the substrate to be processed, and the substrate to be processed and the direct electrode are provided. A terminal for applying a voltage between them. [0017] Preferably, a sealing member is provided between the terminal part and the depression. [0018] Preferably, the electrolytic treatment jig further includes a fluid supply part which is provided to be inserted into at least the depression; and the fluid supply part forms a flow path penetrating from the front surface to the back surface to circulate the fluid. [0019] The present invention according to a different viewpoint is a method for manufacturing an electrolytic treatment jig for electrolytically treating a substrate to be processed using a processing liquid supplied to the substrate to be processed, which is characterized in that: The substrate has a first step of forming a recessed portion on the surface and forming a through hole communicating from the back surface to the recessed portion, and a second step of providing an embedded electrode part in at least the recessed portion; the electrode part is provided with A direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; in the second step, a wiring for a direct electrode connected to the direct electrode is provided inside the through hole. [0020] It is preferable that the electrode component further includes an insulative electrode provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [0021] In the second step, it is preferable that the wiring for the inter-electrode connection connected to the indirect electrode be provided inside the through-hole so as to cover the periphery of the direct-electrode wiring through an insulator. [0022] In the second step, it is preferable to provide a sealing member between the electrode component and the depression. [0023] The method for manufacturing the electrolytic treatment jig preferably further includes a third step of inserting terminal parts into at least the depressions after the first step; the terminal parts are provided for contacting the substrate. A terminal for processing a substrate and applying a voltage between the substrate to be processed and the direct electrode. [0024] In the third step, it is preferable that a sealing member is provided between the terminal part and the depression. [0025] The method for manufacturing the electrolytic treatment jig preferably further includes a fourth step of inserting a fluid supply part into at least the recessed portion after the first step; and forming a through-flow from the surface of the fluid supply part. A flow path to the back for fluid circulation. [0026] According to another aspect of the present invention, the present invention is an electrolytic processing apparatus for electrolytically processing a substrate to be processed, which is characterized by having a substrate holding portion that holds the substrate to be processed, and a substrate held by the substrate holding portion. A processing liquid supply unit for supplying a processing liquid to a processing substrate, and an electrolytic processing jig for electrolytically processing a substrate to be processed held in the substrate holding unit; the electrolytic processing jig has a flat plate shape and a surface A base body forming a recessed portion and forming a through hole communicating from the back surface to the recessed portion, and an electrode part provided to be embedded in at least the recessed portion; the electrode part is provided with contact with the processing liquid, and A direct electrode for applying a voltage between the substrates to be processed; and a direct electrode wiring connected to the direct electrode is provided inside the through hole. [0027] It is preferable that the electrode component further includes an insulative electrode which is provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [Effects of the Invention] [0028] According to the present invention, it is possible to efficiently and appropriately perform electrolytic treatment on a substrate to be processed with a simple device configuration.

[0030] 以下，參照附圖說明本發明之實施型態。又，本發明並不以以下所示之實施型態為限定。　　[0031] 圖1係顯示關於本實施型態之作為電解處理裝置之電鍍處理裝置的構成概略之說明圖。在電鍍處理裝置1，對作為被處理基板之半導體晶圓W(以下，簡稱「晶圓W」)，進行電解處理之電鍍處理。在該晶圓W的表面，形成被用作電極之種晶層(seed layer)(未圖示)。又，在以下的說明所採用之圖面，各構成要素之尺寸，由於優先使技術上理解容易，而未必對應於實際的尺寸。　　[0032] 電鍍處理裝置1，係具有作為基板保持部之晶圓保持部10。晶圓保持部10，係保持晶圓W並使之旋轉之旋轉卡盤。晶圓保持部10，俯視下具有直徑比晶圓W的直徑大之表面10a，在該表面10a，設置例如吸引晶圓W的吸引口(未圖示)。利用自該吸引口的吸引，可以將晶圓W吸附保持在晶圓保持部10上。　　[0033] 在晶圓保持部10，設置例如具備馬達等之驅動機構11，可以利用該驅動機構11以指定速度旋轉。此外，在驅動機構11，設置錫林滾筒(cylinder)等之升降驅動部(未圖示)，使晶圓保持部10可以在鉛直方向移動。　　[0034] 在晶圓保持部10的上方，對向於該晶圓保持部10，設置電解處理治具20。電解處理治具20，係具有由絕緣體、例如陶瓷所構成的基體21。基體21為平板狀，俯視下具有直徑比晶圓W的直徑大的表面21a。在基體21的表面21a側，設置端子22、直接電極23及間接電極24。　　[0035] 端子22，被設置從基體21的表面21a突出去。如圖2所示，端子22，在基體21的外周部被設置複數支。此外，如圖1所示，端子22係彎曲、具有彈性。再者，複數支端子22，由其先端部構成之假想面，配置成與被保持在晶圓保持部10之晶圓W的表面大致平行。於是，在進行電鍍處理時，端子22，係如後述接觸到晶圓W(種晶層)的外周部，對該晶圓W施加電壓。此外，端子22的形狀並不以本實施型態為限，端子22具有彈性即可。　　[0036] 直接電極23與間接電極24，係介著絕緣體25層積設置。直接電極23係在表面21a露出來；間接電極24不從表面21a露出而是被設置在基體21的內部，如圖2所示該等被層積的間接電極24、絕緣體25、直接電極23係設置在表面21a複數處。此外，間接電極24、絕緣體25、直接電極23係分別、俯視下具有矩形狀。於是，在進行電鍍處理時，直接電極23，係如後述接觸到晶圓W上的電鍍液，間接電極24並不接觸到電鍍液。　　[0037] 又，以下敘述該電解處理治具20之更詳細的構成及製造方法。　　[0038] 如圖1所示，在端子22、直接電極23及間接電極24，連接直流電源30。端子22，係介著端子用配線31而連接在直流電源30的負極側。直接電極23係介著直接電極用配線32而連接在直流電源30的正極側；間接電極24係介著間接電極用配線33而連接在直流電源30的正極側。如圖3所示，該等端子用配線31、直接電極用配線32、間接電極用配線33係在背面21b、分別設置在對應於被設在表面21a側的端子22、直接電極23及間接電極24之位置。　　[0039] 又，在圖3未圖示，但最好是在基體21的背面21b設置溝，在該溝、配置直接電極用配線32與間接電極用配線33(導線架)。　　[0040] 如圖1所示，在直接電極用配線32，亦即在直接電極23與直流電源30之間，設置供切換直接電極23與直流電源30的連接狀態用之開關34。開關34的開或關，係利用後述之控制部60控制。於是，在開關34為開(ON)之狀態下，直接電極23與直流電源30為連接，電流會流到直接電極23與端子22之間。此外，在開關34為關(OFF)之狀態下，直接電極23與直流電源30為切斷，電流不會流到直接電極23與端子22之間。　　[0041] 在間接電極用配線33，亦即在間接電極24與直流電源30之間，設置電容器35。電容器35，係為了增加間接電極24的電容而設置。　　[0042] 在基體21的背面21b側，設置使該基體21在鉛直方向移動之移動機構40。在移動機構40，設置錫林滾筒(cylinder)等之升降驅動部(未圖示)。又，移動機構40的構成，只要可使基體21升降者則可以採取種種構成。　　[0043] 在晶圓保持部10與電解處理治具20之間，設置在晶圓W上供給電鍍液之、作為處理液供給部之噴嘴50。噴嘴50，係利用移動機構51，而可以在水平方向及鉛直方向自由移動，被構成可以對著晶圓保持部10自由進退。此外，噴嘴50，係連通到貯留電鍍液之電鍍液供給源(未圖示)，形成從該電鍍液供給源對噴嘴50供給電鍍液。又，作為電鍍液，使用例如溶解硫酸銅與硫酸之混合液，在電鍍液中，包含銅離子。此外，在本實施型態作為處理液供給部係採用噴嘴50，但作為供給電鍍液之機構係可以採用其他種種手段。　　[0044] 又，在晶圓保持部10的周圍，最好是設置接住、回收自晶圓W飛散或落下的液體之杯狀物(未圖示)。　　[0045] 在以上的電鍍處理裝置1，設置控制部60。控制部60，例如電腦，具有程式收容部(未圖示)。在程式收容部，收容控制電鍍處理裝置1之晶圓W的處理之程式。又，前述程式，係例如被記錄於電腦可讀取的硬碟(HD)、磁碟(FD)、光碟(CD)、光磁碟(MO)、記憶卡等電腦可讀取的記憶媒體者，亦可為從該記憶媒體安裝於控制部60者。　　[0046] 其次，說明上述之電解處理治具20之詳細的構成及製造方法。電解處理治具20，係具有在基體21被嵌入後述之電極零件110與端子零件130之構成。　　[0047] 如圖4所示，在基體21，形成複數個後述之被嵌入電極零件110與端子零件130之嵌合部100。又，在圖4，僅圖示1個嵌合部100。　　[0048] 嵌合部100，係由凹窪部101與貫通孔102所構成。凹窪部101，係在基體21的表面21a被形成。貫通孔102，被形成從基體21的背面21b連通到凹窪部101。俯視下，凹窪部101的直徑，係比貫通孔102的直徑還大。此外，在凹窪部101的上面101a，後述之被配置密封構件115的溝部103，被環狀地形成在貫通孔102的周圍。又，在凹窪部101，嵌入後述之電極零件110的基部插座112與端子零件130的基部插座132。由於該等基部插座112、132的厚度不同，所以電極零件110用的凹窪部101的厚度、與端子零件130用的凹窪部101的厚度係不同。　　[0049] 圖5及圖6所示之電極零件110，係被嵌入基體21的嵌合部100之零件，被安裝直接電極23、間接電極24及絕緣體25之零件。　　[0050] 電極零件110，係具有插座111。插座111，係由被嵌入凹窪部101之基部插座112、與被嵌入貫通孔102之側壁插座113所構成。　　[0051] 基部插座112，係具有適合於基體21的凹窪部101之形狀。在基部插座112的內部，被形成下面開口之中空部114。在基部插座112的上面112a，被配置密封構件115的溝部116，被環狀地形成在側壁插座113的周圍。此外，在基部插座112的內側面112b，被配置密封構件117的溝部118，被環狀地形成。再者，在基部插座112的中心部，形成插通直接電極用配線32與間接電極用配線33之貫通孔119。又，在密封構件115、117，使用例如O環。　　[0052] 側壁插座113，係具有適合於基體21的貫通孔102之形狀。在側壁插座113的內部，形成插通直接電極用配線32與間接電極用配線33之中空部120。此外，在側壁插座113的上部外側面，形成後述之被安裝螺栓140之螺絲溝槽121。　　[0053] 在基部插座112之中空部114，自上方起依序層積設置間接電極24、絕緣體25、直接電極23。直接電極23，其表面從中空部114露出來設置。在基部插座112的溝部118與直接電極23的側面，設置供防止間接電極24接觸到電鍍液用之密封構件117。此外，間接電極24，係設置在中空部114的內部。於是，在進行電鍍處理時，直接電極23係如後述接觸到晶圓W上的電鍍液，間接電極24則不接觸到電鍍液。　　[0054] 在側壁插座113之中空部120，設置插通直接電極用配線32與間接電極用配線33。直接電極用配線32係連接在直接電極23；間接電極用配線33係連接在間接電極24。　　[0055] 間接電極用配線33，係環狀地設置在直接電極用配線32的周圍。在間接電極用配線33與直接電極用配線32之間，被充填絕緣體122。在此，在後述之電鍍處理，係對直接電極23與晶圓W之間脈衝狀地施加直流電壓，但該場合，有產生雜音(noise)之疑慮。在本實施型態，係藉由將間接電極用配線33與直接電極用配線32作成同軸構造，亦即將間接電極用配線33作成屏蔽(shield)構造，來去除該雜音。　　[0056] 圖7所示之端子零件130，係被埋入基體21的嵌合部100之零件，被安裝端子22之零件。　　[0057] 端子零件130，係具有與電極零件110的插座111同樣構成之插座131，插座131之部位132～138，係分別對應插座111的部位112、113、115、116、119、120、121。但是，插座131之基部插座132的下面132b為平坦的，未被形成插座111的基部插座112的中空部114。　　[0058] 在端子零件130，在基部插座132的下面132b，安裝端子22。此外，在側壁插座133之中空部137，設置插通端子用配線31。　　[0059] 圖8，係顯示使用上述之基體21、電極零件110、端子零件130而製作之電解處理治具20之製造方法之說明圖。　　[0060] 首先，如圖8(a)所示方式在基體21形成複數個嵌合部100。複數個嵌合部100，係包含電極零件110用之嵌合部100與端子零件130用之嵌合部100。又，嵌合部100之形成方法任意，例如可以是機械加工，或可以是光蝕刻處理或蝕刻處理。　　[0061] 其次，如圖8(b)所示方式在嵌合部100，分別嵌入設置電極零件110與端子零件130。藉由在凹窪部101分別嵌入基部插座112、132，進行電極零件110與端子零件130之水平方向及高度方向之定位。此外，此時，在電極零件110的溝部116與嵌合部100的溝部103，充填密封構件115。此外，在端子零件130的溝部135與嵌合部100的溝部103，也充填密封構件134。藉由以此方式設置密封構件115、134，可抑制於後述之電鍍處理所使用之電鍍液，浸入電極零件110、端子零件130之內部。因而，可以抑制間接電極用配線33或端子用配線31等之電性零件遭受損傷。　　[0062] 之後，如圖8(c)所示方式，電極零件110與端子零件130，分別利用螺栓140而被固定。螺栓140，係安裝在側壁插座113、133。又，也可以省略螺栓140，而將側壁插座113、133分別、固定安裝在貫通孔102。　　[0063] 又，在本實施型態，在電極零件110，事先在側壁插座113的內部插通設置直接電極用配線32與間接電極用配線33，將該電極零件110嵌入嵌合部100，但是該等直接電極用配線32與間接電極用配線33，也可以在將電極零件110嵌入嵌合部100之後，分別連接在直接電極23與間接電極24。同樣地，在端子零件130，端子用配線31，也可以在將端子零件130嵌入嵌合部100之後，連接在端子22。　　[0064] 其次，說明採用如以上方式被構成之電鍍處理裝置1之電鍍處理。　　[0065] 首先，如圖9所示於對向配置晶圓保持部10與電解處理治具20之狀態下，利用移動機構51使噴嘴50移動直到被保持在晶圓保持部10之晶圓W中心部的上方。這時，晶圓保持部10的表面10a與電解處理治具20的基體21的表面21a之間之距離係約100mm。之後，邊利用驅動機構11使晶圓W旋轉、邊從噴嘴50將電鍍液M供給到晶圓W的中心部。被供給的電鍍液M利用離心力而被擴散到晶圓W全面。這時，藉由晶圓W旋轉，電鍍液M係於晶圓面內均一地擴散。接著，當停止從噴嘴50供給電鍍液M、停止晶圓W旋轉時，利用電鍍液M的表面張力將電鍍液M留在晶圓W上，形成均一的膜厚的液泥(puddle)。　　[0066] 之後，如圖10所示方式利用移動機構40降下電解處理治具20。這時，晶圓保持部10的表面10a與電解處理治具20的基體21的表面21a之間之距離係約1mm。接著，使端子22接觸到晶圓W，同時使基體21的背面21b與直接電極23接觸到晶圓W上的電鍍液M。此時，由於端子22具有彈性，而可以調整該端子22的高度，並調整電鍍液M之表面10a、21a間之距離。又，間接電極24，並未接觸到電鍍液M，又利用絕緣體25而被絕緣於電鍍液M。接著，對各端子22施加指定的荷重，在端子22與晶圓W之間形成電性的接點。藉由以此方式施加荷重，即使對於在種晶層的表面形成自然氧化膜等薄膜之場合或接點形成困難度高的材料，也能形成充分的電性接點。　　[0067] 如圖11所示方式一邊對間接電24與晶圓W之間連續地施加直流電壓、一邊對直接電極23與晶圓W之間脈衝狀地施加直流電壓之、施加所謂的脈衝電壓。此時，在複數個端子22對每各端子22，控制脈衝電壓。　　[0068] 更詳細地說明，如圖12所示方式以間接電極24作為陽極、以晶圓W作為陰極並施加直流電壓，而形成電場(靜電場)。如此一來，在電解處理治具20的表面(間接電極24及直接電極23)側聚集負的荷電粒子即硫酸離子S，正的荷電粒子即銅離子C則移動到晶圓W的表面側。　　[0069] 這時，由於利用電容器35增加間接電極24的電容，而可以提高集聚晶圓W表面的銅離子C的濃度。以此方式提高銅離子C的濃度，係有助於後述之電鍍處理之電鍍率的提升與均一性提升。　　[0070] 此外，這時，藉由事先將開關34設為關的狀態，而事先將直接電極23設為電性地浮動(floating)狀態。在這樣的狀況下，由於在電解處理治具20與晶圓W之任何的表面都不進行電荷交換，而形成利用靜電場被吸引的荷電粒子配列在電極表面。如圖12所示，在晶圓W的表面也會均一地配列銅離子C。由於在晶圓W表面不進行銅離子C的電荷交換，水的電性分解也被抑制，而可以提高在對間接電極24與晶圓W之間施加電壓時的電場。於是，利用該高電場可以加速銅離子C的移動，可以提升電鍍處理的電鍍率。再者，藉由任意地控制該電場，也可任意地控制配列在晶圓W表面之銅離子C。　　[0071] 之後，當充分的銅離子C朝晶圓W側移動集聚時，如圖13所示方式將開關34設為開。接著，以直接電極23作為陽極、以晶圓W作為陰極並施加電壓，使電流流到直接電極23與晶圓W之間。如此一來，進行與在晶圓W表面均一地配列的銅離子C之電荷交換，還原銅離子C，而在晶圓W的表面析出銅鍍層70。又，此時硫酸離子S利用直接電極23而被氧化。　　[0072] 由於在晶圓W的表面集聚足夠的銅離子C、且於均一地配列之狀態下還原，而可以在晶圓W的表面均一地析出銅鍍層70。結果，可以使銅鍍層70之結晶密度提高、形成品質良好的銅鍍層70。此外，由於在晶圓W的表面於銅離子C均一地配列之狀態下進行還原，而可以均一且高品質地生成銅鍍層70。　　[0073] 於是，藉由反覆進行上述之從噴嘴50供給電鍍液M、利用間接電極24形成的銅離子C移動、利用直接電極23及晶圓W形成的銅離子C還原，而使銅鍍層70成長到指定膜厚。這樣一來，電鍍處理裝置1之一連串的電鍍處理結束。　　[0074] 根據以上的實施型態，可以藉由將電解處理治具20對向配置於晶圓W、使直接電極23接觸到電鍍液M、且間接電極24不接觸到電鍍液M之狀態下，對晶圓W適切地進行電鍍處理。此外，由於利用間接電極24使銅離子C移動與利用直接電極23及晶圓W使銅離子C還原是個別地進行，而可以在充分的銅離子C均一地集聚在晶圓W表面之狀態下進行銅離子C的還原。因而，可以對晶圓W的表面均一地進行電鍍處理。　　[0075] 此外，根據本實施型態，可以藉由個別地製作基體21與電極零件110、端子零件130、將該等電極零件110與端子零件130分別嵌入基體21，而容易地製造電解處理治具20。此外，利用該簡易的構造，也可以容易地進行維修電解處理治具20。從而，可以低廉化電解處理治具20的製造成本或維修成本，再者可以縮短製造期間或維修期間。　　[0076] 此外，在電解處理治具20，可以在基體21僅形成嵌合部100(凹窪部101、貫通孔102)，就能維持電解處理治具20的形狀保持上充分的剛性、強度。再者，只要將電極零件110與端子零件130嵌入嵌合部100，而不需要複雜的繞拉配線。　　[0077] 在以上的實施型態之電解處理治具20，係將電極零件110與端子零件130嵌入基體21的嵌合部100，而根據該構成，可以將任意的零件設置嵌入基體21。如此一來，可以選擇因應功能之零件而設置在基體21。　　[0078] 作為設置在基體21之零件，也可以例如取代電極零件110，而設置如圖14所示之其他電極零件150。電極零件150，係從電極零件110省略間接電極24與間接電極用配線33者。　　[0079] 電極零件150，係具有與電極零件110的插座111同樣構成之插座151，插座151之部位152～158，係分別對應插座111的部位112、113、115、116、119、120、121。但是，插座151之基部插座152的下面152b為平坦的，未被形成插座111的基部插座112的中空部114。　　[0080] 在電極零件150，在基部插座152的下面152b，安裝直接電極160。此外，在側壁插座153之中空部157，設置插通直接電極用配線161。　　[0081] 該場合，上述實施型態之電鍍處理之、利用間接電極24使銅離子C移動之步驟省略。於是，在本實施型態，也能適切地進行使用電解處理治具20之電鍍處理，可以容易地進行該電解處理治具20之製造、維修。　　[0082] 此外，在以上之實施型態，直接電極160之形狀係可以任意地變更。亦可例如以圖15所示方式直接電極160、其下面朝下方凸出形成。　　[0083] 電鍍處理中，直接電極160係接觸到電鍍液M，但電鍍處理結束後，直接電極160會被抽離電鍍液M。此時，藉由直接電極160的形狀被形成凸狀，可以提昇直接電極160與電鍍液M之剝離性。　　[0084] 此外，也可以如圖16所示方式將直接電極160的平面形狀作成圓形狀。或者，也可以將直接電極160的平面形狀作成六角形狀(未圖示)。在圓形狀或六角形狀之任一場合，都可以緊密配置直接電極160。又，在圖16圖示在表面21a設置直接電極160之場合，但也可以將上述實施型態之直接電極23、間接電極24及絕緣體25的平面形狀，作成圓形狀或六角形狀。　　[0085] 此外，作為設置在基體21之零件，也可以設置圖17所示之流體供給零件170。流體供給零件170，係供給作為流體之氣體或液體之零件。　　[0086] 流體供給零件170，係具有與電極零件110的插座111同樣構成之插座171，插座171之部位172～178，係分別對應插座111的部位112、113、115、116、119、120、121。但是，插座171之基部插座172的下面為平坦的，未被形成插座111的基部插座112的中空部114。此外，貫通孔176與中空部177，係從插座171的表面貫通背面(從基體21的表面21a到背面21b)，構成本發明之流通路。　　[0087] 流體供給零件170，也可以供給作為流體之空氣。該空氣，係在電鍍處理結束後將電解處理治具20抽離電鍍液M時使用。電鍍處理，由於是在電解處理治具20與晶圓W的距離微小之狀態下進行，而在電鍍處理結束後使電解處理治具20退避時，會因電鍍液M的表面張力而不易將電解處理治具20抽離。因而，可以藉由自流體供給零件170供給空氣，容易地進行把該電解處理治具20抽離電鍍液M。又，藉由自流體供給零件170供給液體、例如水，也可以進行把電解處理治具20抽離電鍍液M。　　[0088] 流體供給零件170，也可以供給作為流體之電鍍液M。在上述實施型態，在從噴嘴50將電鍍液M的液泥(puddle)在晶圓W上形成之後，降下電解處理治具20配置到指定的處理位置。對此，在本實施型態，在降下電解處理治具20配置到指定的處理位置之後，自流體供給零件170將電鍍液M供給到晶圓W上。在該場合，也可以享受與上述實施型態相同之效果。而且，可以省略上述實施型態之噴嘴50或移動機構51。　　[0089] 此外，流體供給零件170，也可以供給作為流體之其他處理液。半導體裝置之製造時，在電鍍處理的前後進行種種的液處理。在例如電鍍處理前進行洗淨處理之場合，在晶圓W上供給DIW或IPA等之洗淨液。流體供給零件170，可以是供給此類之洗淨液等之處理液。　　[0090] 在以上的實施型態，係利用移動機構40降下電解處理治具20，使端子22接觸到晶圓W，但在電鍍處理裝置1，也可以利用驅動機構11升高晶圓保持部10。或者，也可以使電解處理治具20與晶圓保持部10之雙方移動。此外，也可以將電解處理治具20與晶圓保持部10之配置作成相反，將電解處理治具20配置在晶圓保持部10的下方。　　[0091] 在以上的實施型態，晶圓保持部10係旋轉卡盤，但也可以取代此，而採用上面開口、在內部貯留電鍍液M之杯狀物。　　[0092] 在以上的實施型態，說明了進行作為電解處理之電鍍處理之場合，但本發明也可以適用於例如蝕刻處理等種種電解處理。　　[0093] 此外，在以上的實施型態係說明在晶圓W的表面側還原銅離子C之場合，但本發明也能適用於晶圓W的表面側氧化被處理離子之場合。該場合，被處理離子係陰離子，在上述實施型態將陽極與陰極作成相反來進行同樣的電解處理即可。在本實施型態，被處理離子的氧化與還原可能不同，仍可以享受與上述實施型態同樣的效果。　　[0094] 以上，參照附圖同時說明了本發明之適切的實施型態，但是本發明並不以相關之例為限定。只要是熟悉該項技藝者，於申請專利範圍所記載的思想的範疇內，明顯會想到的各種變更例或修正例，也都當然屬於本發明的技術範圍。本發明不限於此例而可以採用種種的態樣。[0030] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiments described below. [0031] FIG. 1 is an explanatory diagram showing a schematic configuration of an electroplating treatment apparatus as an electrolytic treatment apparatus according to the embodiment. In the plating processing apparatus 1, the semiconductor wafer W (hereinafter, referred to as "wafer W") as a substrate to be processed is subjected to electrolytic plating. A seed layer (not shown) used as an electrode is formed on the surface of the wafer W. In addition, in the drawings used in the following description, the dimensions of each component are given priority to facilitate technical understanding, and do not necessarily correspond to actual dimensions. [0032] The plating processing apparatus 1 includes a wafer holding portion 10 as a substrate holding portion. The wafer holding portion 10 is a spin chuck that holds and rotates the wafer W. The wafer holding portion 10 has a surface 10 a having a larger diameter than the diameter of the wafer W in a plan view, and a suction port (not shown) for sucking the wafer W is provided on the surface 10 a, for example. The wafer W can be sucked and held on the wafer holding portion 10 by suction from the suction port. [0033] The wafer holding unit 10 is provided with a drive mechanism 11 including, for example, a motor, and the drive mechanism 11 can be used to rotate at a predetermined speed. In addition, the driving mechanism 11 is provided with an elevating driving unit (not shown) such as a cylinder, so that the wafer holding unit 10 can be moved in the vertical direction. [0034] An electrolytic treatment jig 20 is provided above the wafer holding portion 10 so as to face the wafer holding portion 10. The electrolytic treatment jig 20 includes a base 21 made of an insulator, for example, a ceramic. The base 21 has a flat plate shape, and has a surface 21 a having a diameter larger than that of the wafer W in a plan view. On the surface 21a side of the base body 21, a terminal 22, a direct electrode 23, and an indirect electrode 24 are provided. [0035] The terminal 22 is provided to protrude from the surface 21a of the base body 21. As shown in FIG. 2, a plurality of terminals 22 are provided on the outer peripheral portion of the base 21. In addition, as shown in FIG. 1, the terminal 22 is bent and elastic. In addition, the plurality of branch terminals 22 are arranged substantially parallel to the surface of the wafer W held by the wafer holding portion 10 with an imaginary plane constituted by a tip portion thereof. Therefore, during the plating process, the terminal 22 contacts the outer peripheral portion of the wafer W (seed layer) as described later, and a voltage is applied to the wafer W. In addition, the shape of the terminal 22 is not limited to this embodiment, and the terminal 22 may be elastic. [0036] The direct electrode 23 and the indirect electrode 24 are laminated with an insulator 25 interposed therebetween. The direct electrode 23 is exposed on the surface 21a; the indirect electrode 24 is not exposed from the surface 21a but is provided inside the substrate 21, as shown in FIG. 2, the laminated indirect electrode 24, the insulator 25, and the direct electrode 23 It is provided in plural at the surface 21a. The indirect electrode 24, the insulator 25, and the direct electrode 23 each have a rectangular shape in a plan view. Therefore, during the plating process, the direct electrode 23 is in contact with the plating solution on the wafer W as described later, and the indirect electrode 24 is not in contact with the plating solution. [0037] A more detailed configuration and manufacturing method of the electrolytic treatment jig 20 will be described below. [0038] As shown in FIG. 1, a DC power source 30 is connected to the terminal 22, the direct electrode 23, and the indirect electrode 24. The terminal 22 is connected to the negative side of the DC power source 30 through the terminal wiring 31. The direct electrode 23 is connected to the positive electrode side of the DC power source 30 via the direct electrode wiring 32, and the indirect electrode 24 is connected to the positive electrode side of the DC power source 30 via the indirect electrode wiring 33. As shown in FIG. 3, the terminal wirings 31, direct electrode wirings 32, and indirect electrode wirings 33 are provided on the back surface 21b, and are provided on the terminals 22, the direct electrodes 23, and the indirect electrodes corresponding to the surfaces 21a. 24's position. [0039] Although not shown in FIG. 3, it is preferable to provide a groove on the back surface 21b of the base 21, and arrange the direct electrode wiring 32 and the indirect electrode wiring 33 (lead frame) in the groove. [0040] As shown in FIG. 1, a switch 34 for switching the connection state between the direct electrode 23 and the DC power supply 30 is provided between the direct electrode wiring 32, that is, between the direct electrode 23 and the DC power supply 30. The switch 34 is turned on or off by a control unit 60 described later. Therefore, when the switch 34 is ON, the direct electrode 23 is connected to the DC power source 30, and a current flows between the direct electrode 23 and the terminal 22. In addition, when the switch 34 is OFF, the direct electrode 23 and the DC power source 30 are cut off, and no current flows between the direct electrode 23 and the terminal 22. [0041] A capacitor 35 is provided between the indirect electrode wiring 33, that is, between the indirect electrode 24 and the DC power source 30. The capacitor 35 is provided to increase the capacitance of the indirect electrode 24. [0042] A moving mechanism 40 for moving the base body 21 in the vertical direction is provided on the back surface 21b side of the base body 21. The moving mechanism 40 is provided with a lifting drive unit (not shown) such as a cylinder. In addition, the configuration of the moving mechanism 40 can be various as long as the base 21 can be raised and lowered. [0043] Between the wafer holding portion 10 and the electrolytic processing jig 20, a nozzle 50 serving as a processing liquid supply portion for supplying a plating solution on the wafer W is provided. The nozzle 50 is movable in the horizontal direction and the vertical direction by the moving mechanism 51, and is configured to be able to advance and retreat toward the wafer holding portion 10 freely. The nozzle 50 is connected to a plating solution supply source (not shown) that stores the plating solution, and the plating solution is supplied from the plating solution supply source to the nozzle 50. As the plating solution, for example, a mixed solution in which copper sulfate and sulfuric acid are dissolved is used, and the plating solution contains copper ions. In addition, in this embodiment, the nozzle 50 is used as the processing liquid supply unit, but various other means may be adopted as the mechanism system for supplying the plating liquid. [0044] It is preferable that a cup (not shown) is provided around the wafer holding portion 10 to receive and recover the liquid scattered or dropped from the wafer W. [0045] The above-mentioned plating processing apparatus 1 is provided with a control unit 60. The control unit 60, such as a computer, includes a program storage unit (not shown). A program storage section stores a program that controls the processing of the wafer W of the plating processing apparatus 1. The aforementioned programs are recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), magnetic disk (FD), optical disk (CD), optical magnetic disk (MO), or memory card. Alternatively, it may be mounted on the control unit 60 from the storage medium. [0046] Next, the detailed configuration and manufacturing method of the electrolytic treatment jig 20 described above will be described. The electrolytic treatment jig 20 has a structure in which an electrode part 110 and a terminal part 130 described later are embedded in a base 21. [0047] As shown in FIG. 4, a plurality of fitting portions 100 of the electrode parts 110 and the terminal parts 130 to be described later are formed on the base 21. In FIG. 4, only one fitting portion 100 is shown. [0048] The fitting portion 100 is composed of a depression 101 and a through hole 102. The depressions 101 are formed on the surface 21 a of the base 21. The through hole 102 is formed to communicate from the back surface 21 b of the base body 21 to the depression portion 101. In plan view, the diameter of the depressions 101 is larger than the diameter of the through holes 102. In addition, a groove portion 103 in which a sealing member 115 is arranged, which will be described later, is formed on the upper surface 101 a of the depression portion 101, and is formed around the through hole 102. Further, in the depression 101, a base socket 112 of an electrode component 110 described later and a base socket 132 of a terminal component 130 are fitted. Since the thickness of the base sockets 112 and 132 is different, the thickness of the recessed portion 101 for the electrode component 110 and the thickness of the recessed portion 101 for the terminal component 130 are different. [0049] The electrode part 110 shown in FIG. 5 and FIG. 6 is a part that is embedded in the fitting part 100 of the base body 21 and is a part to which the direct electrode 23, the indirect electrode 24, and the insulator 25 are mounted. [0050] The electrode part 110 includes a socket 111. The socket 111 is composed of a base socket 112 fitted into the depression 101 and a side wall socket 113 fitted into the through hole 102. [0051] The base socket 112 has a shape suitable for the depression 101 of the base body 21. Inside the base socket 112, a hollow portion 114 having an opening below is formed. On the upper surface 112 a of the base socket 112, a groove portion 116 in which a sealing member 115 is arranged is formed annularly around the side wall socket 113. Further, a groove portion 118 in which a sealing member 117 is arranged is formed on the inner side surface 112b of the base socket 112, and is formed annularly. Furthermore, a through-hole 119 is formed in the center portion of the base socket 112 through which the direct electrode wiring 32 and the indirect electrode wiring 33 are inserted. For the sealing members 115 and 117, for example, an O-ring is used. [0052] The side wall socket 113 has a shape suitable for the through hole 102 of the base body 21. A hollow portion 120 is formed in the side wall socket 113 to insert the direct electrode wiring 32 and the indirect electrode wiring 33. In addition, a screw groove 121 of a to-be-attached bolt 140 to be described later is formed on the outer side surface of the upper portion of the side wall socket 113. [0053] In the hollow portion 114 of the base socket 112, an indirect electrode 24, an insulator 25, and a direct electrode 23 are sequentially stacked from the top. The direct electrode 23 is provided with its surface exposed from the hollow portion 114. A sealing member 117 for preventing the indirect electrode 24 from contacting the plating solution is provided on the side of the groove portion 118 of the base socket 112 and the direct electrode 23. The indirect electrode 24 is provided inside the hollow portion 114. Therefore, during the plating process, the direct electrode 23 is in contact with the plating solution on the wafer W as described later, and the indirect electrode 24 is not in contact with the plating solution. [0054] In the hollow portion 120 of the side wall socket 113, a direct electrode wiring 32 and an indirect electrode wiring 33 are provided. The direct electrode wiring 32 is connected to the direct electrode 23; the indirect electrode wiring 33 is connected to the indirect electrode 24. [0055] The indirect electrode wiring 33 is provided around the direct electrode wiring 32 in a ring shape. An insulator 122 is filled between the indirect electrode wiring 33 and the direct electrode wiring 32. Here, in the plating process described later, a DC voltage is applied in a pulse form between the direct electrode 23 and the wafer W. However, there is a possibility that noise may occur in this case. In this embodiment, the noise is removed by making the indirect electrode wiring 33 and the direct electrode wiring 32 a coaxial structure, that is, a shield structure for the indirect electrode wiring 33. [0056] The terminal part 130 shown in FIG. 7 is a part embedded in the fitting part 100 of the base body 21 and a part to which the terminal 22 is mounted. [0057] The terminal part 130 is a socket 131 having the same structure as the socket 111 of the electrode part 110. Parts 132 to 138 of the socket 131 correspond to parts 112, 113, 115, 116, 119, 120, 121 of the socket 111, respectively. . However, the lower surface 132 b of the base socket 132 of the socket 131 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. [0058] The terminal 22 is mounted on the terminal part 130 and the lower surface 132b of the base socket 132. In addition, in the hollow portion 137 of the side wall socket 133, a through-terminal wiring 31 is provided. [0059] FIG. 8 is an explanatory diagram showing a manufacturing method of the electrolytic treatment jig 20 manufactured using the above-mentioned substrate 21, electrode parts 110, and terminal parts 130. [0060] First, as shown in FIG. 8 (a), a plurality of fitting portions 100 are formed on the base body 21. The plurality of fitting portions 100 include the fitting portion 100 for the electrode component 110 and the fitting portion 100 for the terminal component 130. The method of forming the fitting portion 100 is arbitrary, and may be, for example, machining, or photoetching or etching. [0061] Next, as shown in FIG. 8 (b), an electrode part 110 and a terminal part 130 are respectively fitted in the fitting part 100. The base sockets 112 and 132 are respectively embedded in the depressions 101 to position the electrode part 110 and the terminal part 130 in the horizontal direction and the height direction. In addition, at this time, the groove member 116 of the electrode component 110 and the groove portion 103 of the fitting portion 100 are filled with the sealing member 115. In addition, the groove portion 135 of the terminal component 130 and the groove portion 103 of the fitting portion 100 are also filled with a sealing member 134. By providing the sealing members 115 and 134 in this manner, it is possible to prevent the plating solution used in the plating process described later from entering the electrode parts 110 and the terminal parts 130. Therefore, damage to electrical components such as the indirect electrode wiring 33 or the terminal wiring 31 can be suppressed. [0062] After that, as shown in FIG. 8 (c), the electrode component 110 and the terminal component 130 are respectively fixed with bolts 140. The bolts 140 are attached to the side wall sockets 113 and 133. Alternatively, the bolts 140 may be omitted, and the side wall sockets 113 and 133 may be fixedly attached to the through holes 102, respectively. [0063] In this embodiment, in the electrode component 110, the direct electrode wiring 32 and the indirect electrode wiring 33 are inserted in the side wall socket 113 in advance, and the electrode component 110 is fitted into the fitting portion 100. The direct electrode wiring 32 and the indirect electrode wiring 33 may be connected to the direct electrode 23 and the indirect electrode 24 after the electrode parts 110 are fitted into the fitting portion 100, respectively. Similarly, the terminal component 130 and the terminal wiring 31 may be connected to the terminal 22 after the terminal component 130 is fitted into the fitting portion 100. [0064] Next, the plating process using the plating processing apparatus 1 configured as described above will be described. [0065] First, as shown in FIG. 9, in a state in which the wafer holding portion 10 and the electrolytic processing jig 20 are oppositely disposed, the nozzle 50 is moved by the moving mechanism 51 until the wafer W held by the wafer holding portion 10 is moved. Above the center. At this time, the distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the base 21 of the electrolytic treatment jig 20 is about 100 mm. Thereafter, while the wafer W is rotated by the driving mechanism 11, the plating solution M is supplied from the nozzle 50 to the center portion of the wafer W. The supplied plating solution M is diffused across the wafer W by centrifugal force. At this time, as the wafer W rotates, the plating solution M is uniformly diffused in the wafer surface. Next, when the supply of the plating solution M from the nozzle 50 is stopped and the rotation of the wafer W is stopped, the plating solution M is left on the wafer W by the surface tension of the plating solution M to form a puddle of uniform thickness. [0066] After that, the electrolytic treatment jig 20 is lowered by the moving mechanism 40 as shown in FIG. 10. At this time, the distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the base 21 of the electrolytic treatment jig 20 is about 1 mm. Next, the terminal 22 is brought into contact with the wafer W, and at the same time, the back surface 21 b of the base 21 and the direct electrode 23 are brought into contact with the plating solution M on the wafer W. At this time, since the terminal 22 has elasticity, the height of the terminal 22 can be adjusted, and the distance between the surfaces 10a and 21a of the plating solution M can be adjusted. The indirect electrode 24 is not in contact with the plating solution M and is insulated from the plating solution M by an insulator 25. Next, a predetermined load is applied to each terminal 22 to form an electrical contact between the terminal 22 and the wafer W. By applying a load in this manner, even in the case where a thin film such as a natural oxide film is formed on the surface of the seed layer or a material having a high degree of difficulty in forming a contact, a sufficient electrical contact can be formed. [0067] As shown in FIG. 11, a so-called pulse voltage is applied while applying a DC voltage between the direct electrode 23 and the wafer W while continuously applying a DC voltage between the indirect power 24 and the wafer W. . At this time, the plurality of terminals 22 controls the pulse voltage for each of the terminals 22. [0068] In more detail, as shown in FIG. 12, an electric field (electrostatic field) is formed by applying an indirect electrode 24 as an anode, a wafer W as a cathode, and applying a DC voltage. In this way, sulfate ion S, which is a negatively charged particle, is accumulated on the surface (indirect electrode 24 and direct electrode 23) of the electrolytic treatment jig 20, and copper ion C, which is a positively charged particle, moves to the surface side of the wafer W. [0069] At this time, since the capacitance of the indirect electrode 24 is increased by the capacitor 35, the concentration of the copper ion C on the surface of the accumulation wafer W can be increased. Increasing the concentration of copper ions C in this way contributes to the improvement of the plating rate and uniformity of the plating process described later. [0070] In addition, at this time, the switch 34 is set to the off state in advance, and the direct electrode 23 is set to the electrically floating state in advance. In such a situation, no charge exchange is performed on any surface of the electrolytic treatment jig 20 and the wafer W, so that the charged particles attracted by the electrostatic field are arranged on the electrode surface. As shown in FIG. 12, the copper ions C are evenly arranged on the surface of the wafer W. Since no charge exchange of copper ions C is performed on the surface of the wafer W, the electrical decomposition of water is also suppressed, and the electric field when a voltage is applied between the indirect electrode 24 and the wafer W can be increased. Therefore, the use of this high electric field can accelerate the movement of copper ions C, and can improve the plating rate of the plating process. Furthermore, by controlling the electric field arbitrarily, the copper ions C arranged on the surface of the wafer W can also be arbitrarily controlled. [0071] After that, when sufficient copper ions C are moved and concentrated toward the wafer W side, the switch 34 is turned on as shown in FIG. 13. Next, the direct electrode 23 is used as an anode, and the wafer W is used as a cathode. A voltage is applied to cause a current to flow between the direct electrode 23 and the wafer W. In this way, the charge exchange with the copper ions C uniformly aligned on the surface of the wafer W is performed, the copper ions C are reduced, and the copper plating layer 70 is deposited on the surface of the wafer W. In this case, the sulfate ion S is oxidized by the direct electrode 23. [0072] Since sufficient copper ions C are accumulated on the surface of the wafer W and reduced in a uniform arrangement, the copper plating layer 70 can be uniformly deposited on the surface of the wafer W. As a result, the crystalline density of the copper plated layer 70 can be improved, and the copper plated layer 70 having good quality can be formed. In addition, since the reduction is performed in a state where the surface of the wafer W is uniformly aligned with the copper ions C, the copper plating layer 70 can be uniformly and high-quality produced. [0073] Then, the above-mentioned supply of the plating solution M from the nozzle 50, the movement of the copper ions C formed by the indirect electrode 24, and the reduction of the copper ions C formed by the direct electrode 23 and the wafer W are repeated, so that the copper plating layer 70 Grow to the specified film thickness. In this way, a series of plating processes of one of the plating process apparatuses 1 is completed. [0074] According to the above embodiment, the electrolytic treatment jig 20 can be disposed opposite to the wafer W, so that the direct electrode 23 is in contact with the plating solution M, and the indirect electrode 24 is not in contact with the plating solution M. The plating process is performed on the wafer W appropriately. In addition, since the copper ion C is moved by the indirect electrode 24 and the copper ion C is reduced by the direct electrode 23 and the wafer W, the copper ion C can be uniformly collected on the surface of the wafer W in a state where sufficient copper ions C are uniformly collected. The reduction of copper ion C is performed. Therefore, the surface of the wafer W can be uniformly plated. [0075] In addition, according to this embodiment, the substrate 21 and the electrode part 110 and the terminal part 130 can be separately manufactured, and the electrode parts 110 and the terminal part 130 can be respectively embedded in the substrate 21, thereby easily manufacturing an electrolytic treatment.具 20。 With 20. In addition, with this simple structure, the electrolytic treatment jig 20 can be easily maintained. Therefore, the manufacturing cost or the maintenance cost of the electrolytic treatment jig 20 can be reduced, and the manufacturing period or the maintenance period can be shortened. [0076] In the electrolytic treatment jig 20, it is possible to form only the fitting portion 100 (the depression 101 and the through hole 102) in the base 21, and it is possible to maintain sufficient rigidity and strength of the shape of the electrolytic treatment jig 20. . In addition, as long as the electrode part 110 and the terminal part 130 are fitted into the fitting part 100, complicated winding wiring is not required. [0077] In the electrolytic treatment jig 20 of the above embodiment, the electrode part 110 and the terminal part 130 are fitted into the fitting part 100 of the base body 21, and according to this configuration, arbitrary parts can be provided to be fitted into the base body 21. In this way, it is possible to select a component corresponding to the function and install it on the base 21. [0078] As a part provided on the base 21, for example, instead of the electrode part 110, another electrode part 150 as shown in FIG. 14 may be provided. The electrode component 150 is obtained by omitting the indirect electrode 24 and the indirect electrode wiring 33 from the electrode component 110. [0079] The electrode part 150 is a socket 151 having the same structure as the socket 111 of the electrode part 110, and parts 152 to 158 of the socket 151 are parts 112, 113, 115, 116, 119, 120, 121 corresponding to the socket 111, respectively. . However, the lower surface 152b of the base socket 152 of the socket 151 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. [0080] A direct electrode 160 is attached to the electrode part 150 and the lower surface 152b of the base socket 152. The hollow portion 157 of the side wall socket 153 is provided with a direct electrode wiring 161. [0081] In this case, the step of moving the copper ion C by the indirect electrode 24 in the electroplating treatment of the above-mentioned embodiment is omitted. Therefore, in this embodiment mode, the electroplating treatment using the electrolytic treatment jig 20 can be appropriately performed, and manufacturing and maintenance of the electrolytic treatment jig 20 can be easily performed. [0082] In addition, in the above embodiment, the shape of the direct electrode 160 can be arbitrarily changed. For example, the direct electrode 160 may be formed in a manner as shown in FIG. [0083] During the plating process, the direct electrode 160 is in contact with the plating solution M, but after the plating process is completed, the direct electrode 160 is removed from the plating solution M. At this time, by forming the shape of the direct electrode 160 into a convex shape, the peelability between the direct electrode 160 and the plating solution M can be improved. [0084] In addition, the planar shape of the direct electrode 160 may be made into a circular shape as shown in FIG. 16. Alternatively, the planar shape of the direct electrode 160 may be a hexagonal shape (not shown). In either the circular shape or the hexagonal shape, the direct electrodes 160 can be closely arranged. Although FIG. 16 illustrates a case where the direct electrode 160 is provided on the surface 21a, the planar shapes of the direct electrode 23, the indirect electrode 24, and the insulator 25 in the above embodiment may be rounded or hexagonal. [0085] In addition, as a component provided on the base body 21, a fluid supply component 170 shown in FIG. 17 may be provided. The fluid supply part 170 is a part that supplies a gas or a liquid as a fluid. [0086] The fluid supply part 170 has a socket 171 having the same structure as the socket 111 of the electrode part 110, and parts 172 to 178 of the socket 171 correspond to parts 112, 113, 115, 116, 119, 120 of the socket 111, 121. However, the lower surface of the base socket 172 of the socket 171 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. In addition, the through hole 176 and the hollow portion 177 penetrate the back surface (from the surface 21a to the back surface 21b of the base 21) from the surface of the socket 171, and constitute the flow path of the present invention. [0087] The fluid supply part 170 may also supply air as a fluid. This air is used when the electrolytic treatment jig 20 is removed from the plating solution M after the plating process is completed. The electroplating process is performed in a state where the distance between the electrolytic treatment jig 20 and the wafer W is small. When the electrolytic treatment jig 20 is retracted after the completion of the plating process, it is difficult to electrolyze due to the surface tension of the plating solution M. The treatment jig 20 is detached. Therefore, it is possible to easily extract the electrolytic treatment jig 20 from the plating solution M by supplying air from the fluid supply part 170. In addition, by supplying a liquid such as water from the fluid supply part 170, the electrolytic treatment jig 20 may be detached from the plating solution M. [0088] The fluid supply part 170 may also supply the plating solution M as a fluid. In the above-mentioned embodiment, after the puddle of the plating solution M is formed on the wafer W from the nozzle 50, the electrolytic processing jig 20 is lowered and disposed at a predetermined processing position. On the other hand, in the present embodiment, after the electrolytic treatment jig 20 is lowered and disposed at a predetermined processing position, the plating solution M is supplied onto the wafer W from the fluid supply part 170. In this case, it is possible to enjoy the same effect as the above-mentioned embodiment. Moreover, the nozzle 50 or the moving mechanism 51 of the above embodiment can be omitted. [0089] In addition, the fluid supply part 170 may supply another processing liquid as a fluid. When manufacturing a semiconductor device, various liquid processes are performed before and after the plating process. When, for example, a cleaning process is performed before the plating process, a cleaning liquid such as DIW or IPA is supplied to the wafer W. The fluid supply part 170 may be a processing liquid that supplies such a cleaning liquid and the like. [0090] In the above embodiment, the moving mechanism 40 is used to lower the electrolytic treatment jig 20 to bring the terminals 22 into contact with the wafer W. However, in the electroplating processing apparatus 1, the driving mechanism 11 may be used to raise the wafer holding portion 10. Alternatively, both the electrolytic processing jig 20 and the wafer holding unit 10 may be moved. In addition, the electrolytic processing jig 20 and the wafer holding unit 10 may be arranged opposite to each other, and the electrolytic processing jig 20 may be arranged below the wafer holding unit 10. [0091] In the above embodiment, the wafer holding portion 10 is a spin chuck. However, instead of this, a cup having an upper surface opening and a plating solution M stored therein may be used. [0092] In the above embodiment, the case where the electrolytic plating process is performed has been described. However, the present invention can also be applied to various electrolytic processes such as etching. [0093] In the above embodiment, the case where the copper ion C is reduced on the surface side of the wafer W is described. However, the present invention can also be applied to a case where the surface ions of the wafer W are oxidized. In this case, the ionic anions to be treated may be reversed by performing the same electrolytic treatment on the anode and the cathode in the above embodiment. In this embodiment mode, the oxidation and reduction of the treated ions may be different, and the same effects as those in the above embodiment mode can still be enjoyed. [0094] In the above, the appropriate embodiments of the present invention have been described with reference to the drawings, but the present invention is not limited to the related examples. As long as it is a person skilled in the art, within the scope of the ideas described in the scope of patent application, various modifications or amendments that are obviously conceivable also belong to the technical scope of the present invention. The present invention is not limited to this example, but various aspects can be adopted.

[0095][0095]

1‧‧‧電鍍處理裝置1‧‧‧Plating treatment device

20‧‧‧電解處理治具20‧‧‧ Electrolytic treatment fixture

21‧‧‧基體21‧‧‧ Matrix

22‧‧‧端子22‧‧‧terminal

23、160‧‧‧直接電極23, 160‧‧‧Direct electrode

24‧‧‧間接電極24‧‧‧Indirect electrode

25‧‧‧絕緣體25‧‧‧ insulator

30‧‧‧直流電源30‧‧‧DC Power

31‧‧‧端子用配線31‧‧‧Terminal wiring

32、161‧‧‧直接電極用配線32、161‧‧‧Direct electrode wiring

33‧‧‧間接電極用配線33‧‧‧Wiring for indirect electrodes

70‧‧‧銅鍍層70‧‧‧ copper plating

100‧‧‧嵌合部100‧‧‧ Fitting section

101‧‧‧凹窪部101‧‧‧ Depression

102‧‧‧貫通孔102‧‧‧through hole

103‧‧‧溝部103‧‧‧Gully

110、150‧‧‧電極零件110, 150‧‧‧ electrode parts

111、131、151、171‧‧‧插座111, 131, 151, 171‧‧‧ sockets

115、134、154、174‧‧‧密封構件115, 134, 154, 174‧‧‧‧sealing members

116、135、155、175‧‧‧溝部116, 135, 155, 175‧‧‧ Ditch

119、136、156、176‧‧‧貫通孔119, 136, 156, 176‧‧‧ through holes

120、137、157、177‧‧‧中空部120, 137, 157, 177‧‧‧ Hollow

122‧‧‧絕緣體122‧‧‧ insulator

130‧‧‧端子零件130‧‧‧Terminal parts

170‧‧‧流體供給零件170‧‧‧ Fluid supply parts

C‧‧‧銅離子C‧‧‧ Copper ion

M‧‧‧電鍍液M‧‧‧Plating solution

S‧‧‧硫酸離子S‧‧‧ sulfate ion

W‧‧‧晶圓(半導體晶圓)W‧‧‧ wafer (semiconductor wafer)

[0029] 　　圖1係顯示關於本實施型態之電鍍處理裝置的構成概略之說明圖。　　圖2係顯示電解處理治具之構成概略之從表面側所見之平面圖。　　圖3係顯示電解處理治具之構成概略之從背面側所見之平面圖。　　圖4係顯示基體的一部分之構成概略之剖面圖。　　圖5係顯示電極零件之構成概略之剖面圖。　　圖6係顯示電極零件之構成概略之平面圖。　　圖7係顯示端子零件之構成概略之剖面圖。　　圖8係顯示電解處理治具之製造方法之說明圖；(a)係顯示在基體形成嵌合部之樣子；(b)係顯示在基體嵌入電極零件與端子零件之樣子；(c)係顯示在基體固定電極零件與端子零件之樣子。　　圖9係顯示在晶圓上形成電鍍液的液泥(puddle)的樣子之說明圖。　　圖10係顯示使端子接觸到晶圓，同時，使直接電極接觸到晶圓上的電鍍液的樣子之說明圖。　　圖11係顯示邊對間接電極與晶圓之間連續地施加直流電壓、邊對直接電極與晶圓之間脈衝狀地施加直流電壓之樣子之圖。　　圖12係顯示對間接電極與晶圓之間施加電壓的樣子之說明圖。　　圖13係顯示對直接電極與晶圓之間施加電壓的樣子之說明圖。　　圖14係顯示其他電極零件之構成概略之剖面圖。　　圖15係顯示其他電極零件之構成概略之剖面圖。　　圖16係顯示其他電解處理治具之構成概略之從表面側所見之平面圖。　　圖17係顯示流體供給零件之構成概略之剖面圖。[0029] FIG. 1 is an explanatory diagram showing a schematic configuration of an electroplating treatment apparatus according to this embodiment. FIG. 2 is a plan view showing the outline of the configuration of an electrolytic treatment jig from the surface side. FIG. 3 is a plan view showing the outline of the configuration of the electrolytic treatment jig from the back side. FIG. 4 is a cross-sectional view showing a schematic configuration of a part of the substrate. FIG. 5 is a cross-sectional view showing the outline of the structure of an electrode part. FIG. 6 is a plan view showing the outline of the structure of an electrode part. FIG. 7 is a sectional view showing the outline of the structure of the terminal parts. Fig. 8 is an explanatory diagram showing a method for manufacturing an electrolytic treatment jig; (a) shows a state where a fitting portion is formed on a base body; (b) shows a state where an electrode part and a terminal part are embedded in a base body; (c) is a state where The electrode parts and terminal parts are fixed to the base. FIG. 9 is an explanatory view showing a state where a puddle of a plating solution is formed on a wafer. FIG. 10 is an explanatory view showing a state of a plating solution in which a terminal is brought into contact with a wafer and a direct electrode is brought into contact with the wafer. FIG. 11 is a diagram showing a state where a DC voltage is continuously applied between the indirect electrode and the wafer, and a DC voltage is pulsed between the direct electrode and the wafer. FIG. 12 is an explanatory diagram showing how a voltage is applied between the indirect electrode and the wafer. FIG. 13 is an explanatory diagram showing how a voltage is applied between the direct electrode and the wafer. FIG. 14 is a sectional view showing the outline of the structure of other electrode parts. FIG. 15 is a sectional view showing the outline of the structure of other electrode parts. FIG. 16 is a plan view showing the outline of the structure of another electrolytic treatment jig from the surface side. FIG. 17 is a cross-sectional view showing a schematic configuration of a fluid supply part.

Claims

An electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed, comprising: (1) having a flat plate shape, forming a depression on the surface, and forming a communication from the back to the depression; The base of the through-hole in the depression and an electrode part provided to be embedded in at least the depression; The electrode part is provided with a direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; Inside the through hole, a direct electrode wiring connected to the direct electrode is provided.

According to the electrolytic treatment jig described in item 1 of the scope of the patent application, the electrode part further includes an insulative electrode which is provided to be insulated from the treatment liquid and is used to form an electric field in the treatment liquid.

According to the electrolytic treatment jig described in item 2 of the scope of patent application, the inside of the through hole is provided with a wiring for connecting the electrode to the indirect electrode; the wiring for the indirect electrode is provided to cover the direct through an insulator. Around the electrode wiring.

The electrolytic treatment jig according to any one of claims 1 to 3 in the scope of the patent application, wherein a sealing member is provided between the electrode part and the depression.

For example, the electrolytic treatment jig described in any one of claims 1 to 3, further comprising a terminal part provided to be embedded in at least the depression; the terminal part is provided for contacting the substrate to be processed, and A terminal for applying a voltage between the substrate to be processed and the direct electrode.

According to the electrolytic treatment jig described in item 5 of the scope of the patent application, wherein: a sealing member is provided between the terminal part and the depression.

The electrolytic treatment jig as described in any one of claims 1 to 3, further comprising a fluid supply part that is embedded in at least the depression; the fluid supply part is formed to penetrate from the front surface to the back surface to make the fluid The flow path of circulation.

A manufacturing method of an electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed is characterized in that: a substrate having a flat plate shape is formed with a depression on the surface and The first step of communicating with the through hole from the back to the depression, and the second step of providing an embedded electrode part in at least the depression; ； The electrode part is provided with contact with the treatment liquid, and is in contact with the substrate. A direct electrode for applying a voltage between the processing substrates; (2) In the second step, a direct electrode wiring connected to the direct electrode is provided inside the through hole.

For example, the method for manufacturing an electrolytic treatment jig as described in item 8 of the scope of the patent application, wherein the electrode part further includes an insulative electrode provided to be insulated from the treatment liquid and used to form an electric field in the treatment liquid.

For example, in the method for manufacturing an electrolytic treatment jig as described in item 9 of the scope of the patent application, in the second step, a connection is provided to the inside of the through hole so as to cover the periphery of the direct electrode wiring with an insulator. The indirect electrode is connected to the electrode wiring.

The method for manufacturing an electrolytic treatment jig according to any one of claims 8 to 10 in the scope of the patent application, wherein in the second step, a sealing member is provided between the electrode part and the depression.

The method for manufacturing an electrolytic treatment jig as described in any one of claims 8 to 10 in the scope of the patent application, further comprising a third step of providing terminal fittings at least in the depressions after the first step; It is provided with a terminal for contacting the substrate to be processed and applying a voltage between the substrate to be processed and the direct electrode.

For example, in the method for manufacturing an electrolytic treatment jig as described in item 12 of the scope of the patent application, in the third step, a sealing member is provided between the terminal part and the depression.

The method for manufacturing an electrolytic treatment jig according to any one of claims 8 to 10 in the scope of the patent application, further comprising a fourth step of providing an embedded fluid supply part in at least the recessed portion after the first step; The fluid supply part forms a flow path penetrating from the front surface to the back surface to circulate the fluid.

An electrolytic processing device for electrolytically processing a substrate to be processed, comprising: a substrate holding portion that holds the substrate to be processed; and a processing liquid supply portion that supplies a processing liquid to the substrate to be processed held by the substrate holding portion, and An electrolytic treatment jig for performing an electrolytic treatment on a substrate to be processed held by the substrate holding portion; The electrolytic treatment jig has a flat plate shape, a depression formed on a surface, and a communication formed from a back surface to the depression. The base of the through-hole in the depression and an electrode part provided to be embedded in at least the depression; The electrode part is provided with a direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; Inside the through hole, a direct electrode wiring connected to the direct electrode is provided.

The electrolytic treatment device according to item 15 of the scope of application for patent, wherein the electrode part further includes an insulative electrode which is provided to be insulated from the treatment liquid and is used to form an electric field in the treatment liquid.