TW201819691A - Electrolytic treatment tool, method for manufacturing electrolytic treatment tool, and electrolytic treatment device - Google Patents

Abstract

This electrolytic treatment tool, which uses a treatment liquid supplied to a substrate to be processed and performs an electrolytic treatment on the substrate to be processed, has: a base body having a planar shape, a recessed part formed on the outer surface thereof, and a through-hole formed penetrating from the rear surface thereof to the recessed part; and an electrode component provided by being embedded into at least the recessed part. The electrode component is provided with a direct electrode for coming into contact with the treatment liquid and applying a voltage between the electrode component and the substrate to be processed, and direct electrode wiring connected to the direct electrode is provided inside the through-hole.

Description

Electrolytic treatment jig, manufacturing method of electrolytic treatment jig, and electrolytic treatment device

[0001] The present invention relates to an electrolytic treatment jig for electrolytically treating a substrate to be processed using a processing liquid supplied to the substrate to be processed, a method for manufacturing the aforementioned electrolytic processing jig, and electrolysis provided with the aforementioned electrolytic processing jig. Processing device.

[0002] The electrolytic process (electrolytic process) is a technique used for various processes such as plating process or etching process. For example, in a semiconductor device manufacturing step, electrolytic treatment is also performed. [0003] The above-mentioned electroplating treatment was performed, for example, with an electroplating apparatus described in Patent Document 1. In the electroplating apparatus, an anode electrode having a mesh-like configuration of platinum is arranged in the plating treatment cup, and a semiconductor wafer disposed opposite to the anode electrode is arranged such that the plating treatment surface faces downward. In addition, a supporting portion that supports a semiconductor wafer constitutes a cathode electrode connected to the semiconductor wafer. Then, the plating process of the semiconductor wafer is performed by spraying the plating solution through the anode electrode in the plating processing cup toward the plating processing surface of the semiconductor wafer. [0004] In addition, the electroplating apparatus described in Patent Document 1 is provided with an ultrasonic vibrator, and the ultrasonic wave oscillated from the ultrasonic vibrator is transmitted to a plating solution to stir the plating solution. Therefore, the uniformity of the plating process is sought to be improved. [Prior Art Document] [Patent Document] [0005] [Patent Document 1] Japanese Patent Laid-Open No. 2004-250747

[Problems to be Solved by the Invention] 0006 [0006] However, when the plating processing apparatus described in Patent Document 1 is used, the configuration of the apparatus is complicated because the plating solution is sprayed. In addition, in order to improve the uniformity of the plating process, an ultrasonic vibration member for stirring the plating solution is necessary, and a large-scale stirring method is necessary. Therefore, since the structure of the device is complicated in this way, the manufacturing of the device is cumbersome. [0007] The present invention has been made in view of this point, and an object thereof is to efficiently and appropriately perform electrolytic treatment on a substrate to be processed with a simple device configuration. [Means for Solving the Problems] [0008] In order to achieve the foregoing object, the present invention is an electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed. A flat plate shape, a base body having a depression formed on the surface, and a through hole communicating from the back surface to the depression, and an electrode part provided to be embedded in at least the depression; the electrode part is provided for contacting the treatment A direct electrode for applying a voltage between the liquid and the substrate to be processed; and a direct electrode wiring connected to the direct electrode is provided inside the through hole. [0009] According to the present invention, an electrolytic processing jig is disposed so that a direct electrode contacts a processing liquid, and a voltage is applied between the direct electrode and a substrate to be processed, so that the substrate to be processed can be appropriately electrolyzed. In addition, the electrolytic treatment jig of the present invention can simplify the structure of the device because it does not require a structure for spraying the treatment liquid as before, and a large-scale means for agitating the treatment liquid is also unnecessary. [0010] Here, when an electrode is directly disposed on a substrate when manufacturing an electrolytic treatment jig, the wiring to the electrode or the winding of an electrical circuit becomes complicated, and large-scale processing is necessary. In addition, there is a possibility that wiring or electrical circuits may be damaged in the case of using the treatment liquid, and it is not optimized. [0011] At this point, according to the present invention, it is possible to easily manufacture an electrolytic treatment jig by separately producing a substrate and an electrode part, and inserting the electrode part into the substrate. In addition, maintenance of the electrolytic treatment jig can be easily performed. Therefore, the manufacturing cost or the maintenance cost of the electrolytic treatment jig can be reduced, and further, the manufacturing period or the maintenance period can be shortened. Therefore, the most suitable electrolytic treatment jig can be used in the electrolytic treatment using the treatment liquid. [0012] In addition, in the electrolytic treatment jig of the present invention, only the depressions and through holes can be formed in the base body, and the rigidity and strength of the shape of the electrolytic treatment jig can be maintained sufficiently. Furthermore, it is possible to embed only electrode parts having a direct electrode in a base body and to provide a wiring for a direct electrode in a through-hole, without requiring complicated winding wiring. [0013] It is preferable that the electrode component further includes an insulative electrode which is provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [0014] It is preferable that an in-electrode wiring connected to the indirect electrode be provided inside the through hole; the indirect electrode wiring is provided so as to cover the periphery of the direct electrode wiring through an insulator. [0015] A sealing member is preferably provided between the electrode part and the depression. [0016] Preferably, the electrolytic treatment jig further has a terminal part provided to be embedded in at least the depression; the terminal part is provided with contact with the substrate to be processed, and the substrate to be processed and the direct electrode are provided. A terminal for applying a voltage between them. [0017] Preferably, a sealing member is provided between the terminal part and the depression. [0018] Preferably, the electrolytic treatment jig further includes a fluid supply part which is provided to be inserted into at least the depression; and the fluid supply part forms a flow path penetrating from the front surface to the back surface to circulate the fluid. [0019] The present invention according to a different viewpoint is a method for manufacturing an electrolytic treatment jig for electrolytically treating a substrate to be processed using a processing liquid supplied to the substrate to be processed, which is characterized in that: The substrate has a first step of forming a recessed portion on the surface and forming a through hole communicating from the back surface to the recessed portion, and a second step of providing an embedded electrode part in at least the recessed portion; the electrode part is provided with A direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; in the second step, a wiring for a direct electrode connected to the direct electrode is provided inside the through hole. [0020] It is preferable that the electrode component further includes an insulative electrode provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [0021] In the second step, it is preferable that the wiring for the inter-electrode connection connected to the indirect electrode be provided inside the through-hole so as to cover the periphery of the direct-electrode wiring through an insulator. [0022] In the second step, it is preferable to provide a sealing member between the electrode component and the depression. [0023] The method for manufacturing the electrolytic treatment jig preferably further includes a third step of inserting terminal parts into at least the depressions after the first step; the terminal parts are provided for contacting the substrate. A terminal for processing a substrate and applying a voltage between the substrate to be processed and the direct electrode. [0024] In the third step, it is preferable that a sealing member is provided between the terminal part and the depression. [0025] The method for manufacturing the electrolytic treatment jig preferably further includes a fourth step of inserting a fluid supply part into at least the recessed portion after the first step; and forming a through-flow from the surface of the fluid supply part. A flow path to the back for fluid circulation. [0026] According to another aspect of the present invention, the present invention is an electrolytic processing apparatus for electrolytically processing a substrate to be processed, which is characterized by having a substrate holding portion that holds the substrate to be processed, and a substrate held by the substrate holding portion. A processing liquid supply unit for supplying a processing liquid to a processing substrate, and an electrolytic processing jig for electrolytically processing a substrate to be processed held in the substrate holding unit; the electrolytic processing jig has a flat plate shape and a surface A base body forming a recessed portion and forming a through hole communicating from the back surface to the recessed portion, and an electrode part provided to be embedded in at least the recessed portion; the electrode part is provided with contact with the processing liquid, and A direct electrode for applying a voltage between the substrates to be processed; and a direct electrode wiring connected to the direct electrode is provided inside the through hole. [0027] It is preferable that the electrode component further includes an insulative electrode which is provided to be insulated from the processing liquid and used to form an electric field in the processing liquid. [Effects of the Invention] [0028] According to the present invention, it is possible to efficiently and appropriately perform electrolytic treatment on a substrate to be processed with a simple device configuration.

[0030] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiments described below. [0031] FIG. 1 is an explanatory diagram showing a schematic configuration of an electroplating treatment apparatus as an electrolytic treatment apparatus according to the embodiment. In the plating processing apparatus 1, the semiconductor wafer W (hereinafter, referred to as "wafer W") as a substrate to be processed is subjected to electrolytic plating. A seed layer (not shown) used as an electrode is formed on the surface of the wafer W. In addition, in the drawings used in the following description, the dimensions of each component are given priority to facilitate technical understanding, and do not necessarily correspond to actual dimensions. [0032] The plating processing apparatus 1 includes a wafer holding portion 10 as a substrate holding portion. The wafer holding portion 10 is a spin chuck that holds and rotates the wafer W. The wafer holding portion 10 has a surface 10 a having a larger diameter than the diameter of the wafer W in a plan view, and a suction port (not shown) for sucking the wafer W is provided on the surface 10 a, for example. The wafer W can be sucked and held on the wafer holding portion 10 by suction from the suction port. [0033] The wafer holding unit 10 is provided with a drive mechanism 11 including, for example, a motor, and the drive mechanism 11 can be used to rotate at a predetermined speed. In addition, the driving mechanism 11 is provided with an elevating driving unit (not shown) such as a cylinder, so that the wafer holding unit 10 can be moved in the vertical direction. [0034] An electrolytic treatment jig 20 is provided above the wafer holding portion 10 so as to face the wafer holding portion 10. The electrolytic treatment jig 20 includes a base 21 made of an insulator, for example, a ceramic. The base 21 has a flat plate shape, and has a surface 21 a having a diameter larger than that of the wafer W in a plan view. On the surface 21a side of the base body 21, a terminal 22, a direct electrode 23, and an indirect electrode 24 are provided. [0035] The terminal 22 is provided to protrude from the surface 21a of the base body 21. As shown in FIG. 2, a plurality of terminals 22 are provided on the outer peripheral portion of the base 21. In addition, as shown in FIG. 1, the terminal 22 is bent and elastic. In addition, the plurality of branch terminals 22 are arranged substantially parallel to the surface of the wafer W held by the wafer holding portion 10 with an imaginary plane constituted by a tip portion thereof. Therefore, during the plating process, the terminal 22 contacts the outer peripheral portion of the wafer W (seed layer) as described later, and a voltage is applied to the wafer W. In addition, the shape of the terminal 22 is not limited to this embodiment, and the terminal 22 may be elastic. [0036] The direct electrode 23 and the indirect electrode 24 are laminated with an insulator 25 interposed therebetween. The direct electrode 23 is exposed on the surface 21a; the indirect electrode 24 is not exposed from the surface 21a but is provided inside the substrate 21, as shown in FIG. 2, the laminated indirect electrode 24, the insulator 25, and the direct electrode 23 It is provided in plural at the surface 21a. The indirect electrode 24, the insulator 25, and the direct electrode 23 each have a rectangular shape in a plan view. Therefore, during the plating process, the direct electrode 23 is in contact with the plating solution on the wafer W as described later, and the indirect electrode 24 is not in contact with the plating solution. [0037] A more detailed configuration and manufacturing method of the electrolytic treatment jig 20 will be described below. [0038] As shown in FIG. 1, a DC power source 30 is connected to the terminal 22, the direct electrode 23, and the indirect electrode 24. The terminal 22 is connected to the negative side of the DC power source 30 through the terminal wiring 31. The direct electrode 23 is connected to the positive electrode side of the DC power source 30 via the direct electrode wiring 32, and the indirect electrode 24 is connected to the positive electrode side of the DC power source 30 via the indirect electrode wiring 33. As shown in FIG. 3, the terminal wirings 31, direct electrode wirings 32, and indirect electrode wirings 33 are provided on the back surface 21b, and are provided on the terminals 22, the direct electrodes 23, and the indirect electrodes corresponding to the surfaces 21a. 24's position. [0039] Although not shown in FIG. 3, it is preferable to provide a groove on the back surface 21b of the base 21, and arrange the direct electrode wiring 32 and the indirect electrode wiring 33 (lead frame) in the groove. [0040] As shown in FIG. 1, a switch 34 for switching the connection state between the direct electrode 23 and the DC power supply 30 is provided between the direct electrode wiring 32, that is, between the direct electrode 23 and the DC power supply 30. The switch 34 is turned on or off by a control unit 60 described later. Therefore, when the switch 34 is ON, the direct electrode 23 is connected to the DC power source 30, and a current flows between the direct electrode 23 and the terminal 22. In addition, when the switch 34 is OFF, the direct electrode 23 and the DC power source 30 are cut off, and no current flows between the direct electrode 23 and the terminal 22. [0041] A capacitor 35 is provided between the indirect electrode wiring 33, that is, between the indirect electrode 24 and the DC power source 30. The capacitor 35 is provided to increase the capacitance of the indirect electrode 24. [0042] A moving mechanism 40 for moving the base body 21 in the vertical direction is provided on the back surface 21b side of the base body 21. The moving mechanism 40 is provided with a lifting drive unit (not shown) such as a cylinder. In addition, the configuration of the moving mechanism 40 can be various as long as the base 21 can be raised and lowered. [0043] Between the wafer holding portion 10 and the electrolytic processing jig 20, a nozzle 50 serving as a processing liquid supply portion for supplying a plating solution on the wafer W is provided. The nozzle 50 is movable in the horizontal direction and the vertical direction by the moving mechanism 51, and is configured to be able to advance and retreat toward the wafer holding portion 10 freely. The nozzle 50 is connected to a plating solution supply source (not shown) that stores the plating solution, and the plating solution is supplied from the plating solution supply source to the nozzle 50. As the plating solution, for example, a mixed solution in which copper sulfate and sulfuric acid are dissolved is used, and the plating solution contains copper ions. In addition, in this embodiment, the nozzle 50 is used as the processing liquid supply unit, but various other means may be adopted as the mechanism system for supplying the plating liquid. [0044] It is preferable that a cup (not shown) is provided around the wafer holding portion 10 to receive and recover the liquid scattered or dropped from the wafer W. [0045] The above-mentioned plating processing apparatus 1 is provided with a control unit 60. The control unit 60, such as a computer, includes a program storage unit (not shown). A program storage section stores a program that controls the processing of the wafer W of the plating processing apparatus 1. The aforementioned programs are recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), magnetic disk (FD), optical disk (CD), optical magnetic disk (MO), or memory card. Alternatively, it may be mounted on the control unit 60 from the storage medium. [0046] Next, the detailed configuration and manufacturing method of the electrolytic treatment jig 20 described above will be described. The electrolytic treatment jig 20 has a structure in which an electrode part 110 and a terminal part 130 described later are embedded in a base 21. [0047] As shown in FIG. 4, a plurality of fitting portions 100 of the electrode parts 110 and the terminal parts 130 to be described later are formed on the base 21. In FIG. 4, only one fitting portion 100 is shown. [0048] The fitting portion 100 is composed of a depression 101 and a through hole 102. The depressions 101 are formed on the surface 21 a of the base 21. The through hole 102 is formed to communicate from the back surface 21 b of the base body 21 to the depression portion 101. In plan view, the diameter of the depressions 101 is larger than the diameter of the through holes 102. In addition, a groove portion 103 in which a sealing member 115 is arranged, which will be described later, is formed on the upper surface 101 a of the depression portion 101, and is formed around the through hole 102. Further, in the depression 101, a base socket 112 of an electrode component 110 described later and a base socket 132 of a terminal component 130 are fitted. Since the thickness of the base sockets 112 and 132 is different, the thickness of the recessed portion 101 for the electrode component 110 and the thickness of the recessed portion 101 for the terminal component 130 are different. [0049] The electrode part 110 shown in FIG. 5 and FIG. 6 is a part that is embedded in the fitting part 100 of the base body 21 and is a part to which the direct electrode 23, the indirect electrode 24, and the insulator 25 are mounted. [0050] The electrode part 110 includes a socket 111. The socket 111 is composed of a base socket 112 fitted into the depression 101 and a side wall socket 113 fitted into the through hole 102. [0051] The base socket 112 has a shape suitable for the depression 101 of the base body 21. Inside the base socket 112, a hollow portion 114 having an opening below is formed. On the upper surface 112 a of the base socket 112, a groove portion 116 in which a sealing member 115 is arranged is formed annularly around the side wall socket 113. Further, a groove portion 118 in which a sealing member 117 is arranged is formed on the inner side surface 112b of the base socket 112, and is formed annularly. Furthermore, a through-hole 119 is formed in the center portion of the base socket 112 through which the direct electrode wiring 32 and the indirect electrode wiring 33 are inserted. For the sealing members 115 and 117, for example, an O-ring is used. [0052] The side wall socket 113 has a shape suitable for the through hole 102 of the base body 21. A hollow portion 120 is formed in the side wall socket 113 to insert the direct electrode wiring 32 and the indirect electrode wiring 33. In addition, a screw groove 121 of a to-be-attached bolt 140 to be described later is formed on the outer side surface of the upper portion of the side wall socket 113. [0053] In the hollow portion 114 of the base socket 112, an indirect electrode 24, an insulator 25, and a direct electrode 23 are sequentially stacked from the top. The direct electrode 23 is provided with its surface exposed from the hollow portion 114. A sealing member 117 for preventing the indirect electrode 24 from contacting the plating solution is provided on the side of the groove portion 118 of the base socket 112 and the direct electrode 23. The indirect electrode 24 is provided inside the hollow portion 114. Therefore, during the plating process, the direct electrode 23 is in contact with the plating solution on the wafer W as described later, and the indirect electrode 24 is not in contact with the plating solution. [0054] In the hollow portion 120 of the side wall socket 113, a direct electrode wiring 32 and an indirect electrode wiring 33 are provided. The direct electrode wiring 32 is connected to the direct electrode 23; the indirect electrode wiring 33 is connected to the indirect electrode 24. [0055] The indirect electrode wiring 33 is provided around the direct electrode wiring 32 in a ring shape. An insulator 122 is filled between the indirect electrode wiring 33 and the direct electrode wiring 32. Here, in the plating process described later, a DC voltage is applied in a pulse form between the direct electrode 23 and the wafer W. However, there is a possibility that noise may occur in this case. In this embodiment, the noise is removed by making the indirect electrode wiring 33 and the direct electrode wiring 32 a coaxial structure, that is, a shield structure for the indirect electrode wiring 33. [0056] The terminal part 130 shown in FIG. 7 is a part embedded in the fitting part 100 of the base body 21 and a part to which the terminal 22 is mounted. [0057] The terminal part 130 is a socket 131 having the same structure as the socket 111 of the electrode part 110. Parts 132 to 138 of the socket 131 correspond to parts 112, 113, 115, 116, 119, 120, 121 of the socket 111, respectively. . However, the lower surface 132 b of the base socket 132 of the socket 131 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. [0058] The terminal 22 is mounted on the terminal part 130 and the lower surface 132b of the base socket 132. In addition, in the hollow portion 137 of the side wall socket 133, a through-terminal wiring 31 is provided. [0059] FIG. 8 is an explanatory diagram showing a manufacturing method of the electrolytic treatment jig 20 manufactured using the above-mentioned substrate 21, electrode parts 110, and terminal parts 130. [0060] First, as shown in FIG. 8 (a), a plurality of fitting portions 100 are formed on the base body 21. The plurality of fitting portions 100 include the fitting portion 100 for the electrode component 110 and the fitting portion 100 for the terminal component 130. The method of forming the fitting portion 100 is arbitrary, and may be, for example, machining, or photoetching or etching. [0061] Next, as shown in FIG. 8 (b), an electrode part 110 and a terminal part 130 are respectively fitted in the fitting part 100. The base sockets 112 and 132 are respectively embedded in the depressions 101 to position the electrode part 110 and the terminal part 130 in the horizontal direction and the height direction. In addition, at this time, the groove member 116 of the electrode component 110 and the groove portion 103 of the fitting portion 100 are filled with the sealing member 115. In addition, the groove portion 135 of the terminal component 130 and the groove portion 103 of the fitting portion 100 are also filled with a sealing member 134. By providing the sealing members 115 and 134 in this manner, it is possible to prevent the plating solution used in the plating process described later from entering the electrode parts 110 and the terminal parts 130. Therefore, damage to electrical components such as the indirect electrode wiring 33 or the terminal wiring 31 can be suppressed. [0062] After that, as shown in FIG. 8 (c), the electrode component 110 and the terminal component 130 are respectively fixed with bolts 140. The bolts 140 are attached to the side wall sockets 113 and 133. Alternatively, the bolts 140 may be omitted, and the side wall sockets 113 and 133 may be fixedly attached to the through holes 102, respectively. [0063] In this embodiment, in the electrode component 110, the direct electrode wiring 32 and the indirect electrode wiring 33 are inserted in the side wall socket 113 in advance, and the electrode component 110 is fitted into the fitting portion 100. The direct electrode wiring 32 and the indirect electrode wiring 33 may be connected to the direct electrode 23 and the indirect electrode 24 after the electrode parts 110 are fitted into the fitting portion 100, respectively. Similarly, the terminal component 130 and the terminal wiring 31 may be connected to the terminal 22 after the terminal component 130 is fitted into the fitting portion 100. [0064] Next, the plating process using the plating processing apparatus 1 configured as described above will be described. [0065] First, as shown in FIG. 9, in a state in which the wafer holding portion 10 and the electrolytic processing jig 20 are oppositely disposed, the nozzle 50 is moved by the moving mechanism 51 until the wafer W held by the wafer holding portion 10 is moved. Above the center. At this time, the distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the base 21 of the electrolytic treatment jig 20 is about 100 mm. Thereafter, while the wafer W is rotated by the driving mechanism 11, the plating solution M is supplied from the nozzle 50 to the center portion of the wafer W. The supplied plating solution M is diffused across the wafer W by centrifugal force. At this time, as the wafer W rotates, the plating solution M is uniformly diffused in the wafer surface. Next, when the supply of the plating solution M from the nozzle 50 is stopped and the rotation of the wafer W is stopped, the plating solution M is left on the wafer W by the surface tension of the plating solution M to form a puddle of uniform thickness. [0066] After that, the electrolytic treatment jig 20 is lowered by the moving mechanism 40 as shown in FIG. 10. At this time, the distance between the surface 10a of the wafer holding portion 10 and the surface 21a of the base 21 of the electrolytic treatment jig 20 is about 1 mm. Next, the terminal 22 is brought into contact with the wafer W, and at the same time, the back surface 21 b of the base 21 and the direct electrode 23 are brought into contact with the plating solution M on the wafer W. At this time, since the terminal 22 has elasticity, the height of the terminal 22 can be adjusted, and the distance between the surfaces 10a and 21a of the plating solution M can be adjusted. The indirect electrode 24 is not in contact with the plating solution M and is insulated from the plating solution M by an insulator 25. Next, a predetermined load is applied to each terminal 22 to form an electrical contact between the terminal 22 and the wafer W. By applying a load in this manner, even in the case where a thin film such as a natural oxide film is formed on the surface of the seed layer or a material having a high degree of difficulty in forming a contact, a sufficient electrical contact can be formed. [0067] As shown in FIG. 11, a so-called pulse voltage is applied while applying a DC voltage between the direct electrode 23 and the wafer W while continuously applying a DC voltage between the indirect power 24 and the wafer W. . At this time, the plurality of terminals 22 controls the pulse voltage for each of the terminals 22. [0068] In more detail, as shown in FIG. 12, an electric field (electrostatic field) is formed by applying an indirect electrode 24 as an anode, a wafer W as a cathode, and applying a DC voltage. In this way, sulfate ion S, which is a negatively charged particle, is accumulated on the surface (indirect electrode 24 and direct electrode 23) of the electrolytic treatment jig 20, and copper ion C, which is a positively charged particle, moves to the surface side of the wafer W. [0069] At this time, since the capacitance of the indirect electrode 24 is increased by the capacitor 35, the concentration of the copper ion C on the surface of the accumulation wafer W can be increased. Increasing the concentration of copper ions C in this way contributes to the improvement of the plating rate and uniformity of the plating process described later. [0070] In addition, at this time, the switch 34 is set to the off state in advance, and the direct electrode 23 is set to the electrically floating state in advance. In such a situation, no charge exchange is performed on any surface of the electrolytic treatment jig 20 and the wafer W, so that the charged particles attracted by the electrostatic field are arranged on the electrode surface. As shown in FIG. 12, the copper ions C are evenly arranged on the surface of the wafer W. Since no charge exchange of copper ions C is performed on the surface of the wafer W, the electrical decomposition of water is also suppressed, and the electric field when a voltage is applied between the indirect electrode 24 and the wafer W can be increased. Therefore, the use of this high electric field can accelerate the movement of copper ions C, and can improve the plating rate of the plating process. Furthermore, by controlling the electric field arbitrarily, the copper ions C arranged on the surface of the wafer W can also be arbitrarily controlled. [0071] After that, when sufficient copper ions C are moved and concentrated toward the wafer W side, the switch 34 is turned on as shown in FIG. 13. Next, the direct electrode 23 is used as an anode, and the wafer W is used as a cathode. A voltage is applied to cause a current to flow between the direct electrode 23 and the wafer W. In this way, the charge exchange with the copper ions C uniformly aligned on the surface of the wafer W is performed, the copper ions C are reduced, and the copper plating layer 70 is deposited on the surface of the wafer W. In this case, the sulfate ion S is oxidized by the direct electrode 23. [0072] Since sufficient copper ions C are accumulated on the surface of the wafer W and reduced in a uniform arrangement, the copper plating layer 70 can be uniformly deposited on the surface of the wafer W. As a result, the crystalline density of the copper plated layer 70 can be improved, and the copper plated layer 70 having good quality can be formed. In addition, since the reduction is performed in a state where the surface of the wafer W is uniformly aligned with the copper ions C, the copper plating layer 70 can be uniformly and high-quality produced. [0073] Then, the above-mentioned supply of the plating solution M from the nozzle 50, the movement of the copper ions C formed by the indirect electrode 24, and the reduction of the copper ions C formed by the direct electrode 23 and the wafer W are repeated, so that the copper plating layer 70 Grow to the specified film thickness. In this way, a series of plating processes of one of the plating process apparatuses 1 is completed. [0074] According to the above embodiment, the electrolytic treatment jig 20 can be disposed opposite to the wafer W, so that the direct electrode 23 is in contact with the plating solution M, and the indirect electrode 24 is not in contact with the plating solution M. The plating process is performed on the wafer W appropriately. In addition, since the copper ion C is moved by the indirect electrode 24 and the copper ion C is reduced by the direct electrode 23 and the wafer W, the copper ion C can be uniformly collected on the surface of the wafer W in a state where sufficient copper ions C are uniformly collected. The reduction of copper ion C is performed. Therefore, the surface of the wafer W can be uniformly plated. [0075] In addition, according to this embodiment, the substrate 21 and the electrode part 110 and the terminal part 130 can be separately manufactured, and the electrode parts 110 and the terminal part 130 can be respectively embedded in the substrate 21, thereby easily manufacturing an electrolytic treatment.具 20。 With 20. In addition, with this simple structure, the electrolytic treatment jig 20 can be easily maintained. Therefore, the manufacturing cost or the maintenance cost of the electrolytic treatment jig 20 can be reduced, and the manufacturing period or the maintenance period can be shortened. [0076] In the electrolytic treatment jig 20, it is possible to form only the fitting portion 100 (the depression 101 and the through hole 102) in the base 21, and it is possible to maintain sufficient rigidity and strength of the shape of the electrolytic treatment jig 20. . In addition, as long as the electrode part 110 and the terminal part 130 are fitted into the fitting part 100, complicated winding wiring is not required. [0077] In the electrolytic treatment jig 20 of the above embodiment, the electrode part 110 and the terminal part 130 are fitted into the fitting part 100 of the base body 21, and according to this configuration, arbitrary parts can be provided to be fitted into the base body 21. In this way, it is possible to select a component corresponding to the function and install it on the base 21. [0078] As a part provided on the base 21, for example, instead of the electrode part 110, another electrode part 150 as shown in FIG. 14 may be provided. The electrode component 150 is obtained by omitting the indirect electrode 24 and the indirect electrode wiring 33 from the electrode component 110. [0079] The electrode part 150 is a socket 151 having the same structure as the socket 111 of the electrode part 110, and parts 152 to 158 of the socket 151 are parts 112, 113, 115, 116, 119, 120, 121 corresponding to the socket 111, respectively. . However, the lower surface 152b of the base socket 152 of the socket 151 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. [0080] A direct electrode 160 is attached to the electrode part 150 and the lower surface 152b of the base socket 152. The hollow portion 157 of the side wall socket 153 is provided with a direct electrode wiring 161. [0081] In this case, the step of moving the copper ion C by the indirect electrode 24 in the electroplating treatment of the above-mentioned embodiment is omitted. Therefore, in this embodiment mode, the electroplating treatment using the electrolytic treatment jig 20 can be appropriately performed, and manufacturing and maintenance of the electrolytic treatment jig 20 can be easily performed. [0082] In addition, in the above embodiment, the shape of the direct electrode 160 can be arbitrarily changed. For example, the direct electrode 160 may be formed in a manner as shown in FIG. [0083] During the plating process, the direct electrode 160 is in contact with the plating solution M, but after the plating process is completed, the direct electrode 160 is removed from the plating solution M. At this time, by forming the shape of the direct electrode 160 into a convex shape, the peelability between the direct electrode 160 and the plating solution M can be improved. [0084] In addition, the planar shape of the direct electrode 160 may be made into a circular shape as shown in FIG. 16. Alternatively, the planar shape of the direct electrode 160 may be a hexagonal shape (not shown). In either the circular shape or the hexagonal shape, the direct electrodes 160 can be closely arranged. Although FIG. 16 illustrates a case where the direct electrode 160 is provided on the surface 21a, the planar shapes of the direct electrode 23, the indirect electrode 24, and the insulator 25 in the above embodiment may be rounded or hexagonal. [0085] In addition, as a component provided on the base body 21, a fluid supply component 170 shown in FIG. 17 may be provided. The fluid supply part 170 is a part that supplies a gas or a liquid as a fluid. [0086] The fluid supply part 170 has a socket 171 having the same structure as the socket 111 of the electrode part 110, and parts 172 to 178 of the socket 171 correspond to parts 112, 113, 115, 116, 119, 120 of the socket 111, 121. However, the lower surface of the base socket 172 of the socket 171 is flat, and the hollow portion 114 of the base socket 112 of the socket 111 is not formed. In addition, the through hole 176 and the hollow portion 177 penetrate the back surface (from the surface 21a to the back surface 21b of the base 21) from the surface of the socket 171, and constitute the flow path of the present invention. [0087] The fluid supply part 170 may also supply air as a fluid. This air is used when the electrolytic treatment jig 20 is removed from the plating solution M after the plating process is completed. The electroplating process is performed in a state where the distance between the electrolytic treatment jig 20 and the wafer W is small. When the electrolytic treatment jig 20 is retracted after the completion of the plating process, it is difficult to electrolyze due to the surface tension of the plating solution M. The treatment jig 20 is detached. Therefore, it is possible to easily extract the electrolytic treatment jig 20 from the plating solution M by supplying air from the fluid supply part 170. In addition, by supplying a liquid such as water from the fluid supply part 170, the electrolytic treatment jig 20 may be detached from the plating solution M. [0088] The fluid supply part 170 may also supply the plating solution M as a fluid. In the above-mentioned embodiment, after the puddle of the plating solution M is formed on the wafer W from the nozzle 50, the electrolytic processing jig 20 is lowered and disposed at a predetermined processing position. On the other hand, in the present embodiment, after the electrolytic treatment jig 20 is lowered and disposed at a predetermined processing position, the plating solution M is supplied onto the wafer W from the fluid supply part 170. In this case, it is possible to enjoy the same effect as the above-mentioned embodiment. Moreover, the nozzle 50 or the moving mechanism 51 of the above embodiment can be omitted. [0089] In addition, the fluid supply part 170 may supply another processing liquid as a fluid. When manufacturing a semiconductor device, various liquid processes are performed before and after the plating process. When, for example, a cleaning process is performed before the plating process, a cleaning liquid such as DIW or IPA is supplied to the wafer W. The fluid supply part 170 may be a processing liquid that supplies such a cleaning liquid and the like. [0090] In the above embodiment, the moving mechanism 40 is used to lower the electrolytic treatment jig 20 to bring the terminals 22 into contact with the wafer W. However, in the electroplating processing apparatus 1, the driving mechanism 11 may be used to raise the wafer holding portion 10. Alternatively, both the electrolytic processing jig 20 and the wafer holding unit 10 may be moved. In addition, the electrolytic processing jig 20 and the wafer holding unit 10 may be arranged opposite to each other, and the electrolytic processing jig 20 may be arranged below the wafer holding unit 10. [0091] In the above embodiment, the wafer holding portion 10 is a spin chuck. However, instead of this, a cup having an upper surface opening and a plating solution M stored therein may be used. [0092] In the above embodiment, the case where the electrolytic plating process is performed has been described. However, the present invention can also be applied to various electrolytic processes such as etching. [0093] In the above embodiment, the case where the copper ion C is reduced on the surface side of the wafer W is described. However, the present invention can also be applied to a case where the surface ions of the wafer W are oxidized. In this case, the ionic anions to be treated may be reversed by performing the same electrolytic treatment on the anode and the cathode in the above embodiment. In this embodiment mode, the oxidation and reduction of the treated ions may be different, and the same effects as those in the above embodiment mode can still be enjoyed. [0094] In the above, the appropriate embodiments of the present invention have been described with reference to the drawings, but the present invention is not limited to the related examples. As long as it is a person skilled in the art, within the scope of the ideas described in the scope of patent application, various modifications or amendments that are obviously conceivable also belong to the technical scope of the present invention. The present invention is not limited to this example, but various aspects can be adopted.

[0095]

1‧‧‧Plating treatment device

20‧‧‧ Electrolytic treatment fixture

21‧‧‧ Matrix

22‧‧‧terminal

23, 160‧‧‧Direct electrode

24‧‧‧Indirect electrode

25‧‧‧ insulator

30‧‧‧DC Power

31‧‧‧Terminal wiring

32、161‧‧‧Direct electrode wiring

33‧‧‧Wiring for indirect electrodes

70‧‧‧ copper plating

100‧‧‧ Fitting section

101‧‧‧ Depression

102‧‧‧through hole

103‧‧‧Gully

110, 150‧‧‧ electrode parts

111, 131, 151, 171‧‧‧ sockets

115, 134, 154, 174‧‧‧‧sealing members

116, 135, 155, 175‧‧‧ Ditch

119, 136, 156, 176‧‧‧ through holes

120, 137, 157, 177‧‧‧ Hollow

122‧‧‧ insulator

130‧‧‧Terminal parts

170‧‧‧ Fluid supply parts

C‧‧‧ Copper ion

M‧‧‧Plating solution

S‧‧‧ sulfate ion

W‧‧‧ wafer (semiconductor wafer)

[0029] FIG. 1 is an explanatory diagram showing a schematic configuration of an electroplating treatment apparatus according to this embodiment. FIG. 2 is a plan view showing the outline of the configuration of an electrolytic treatment jig from the surface side. FIG. 3 is a plan view showing the outline of the configuration of the electrolytic treatment jig from the back side. FIG. 4 is a cross-sectional view showing a schematic configuration of a part of the substrate. FIG. 5 is a cross-sectional view showing the outline of the structure of an electrode part. FIG. 6 is a plan view showing the outline of the structure of an electrode part. FIG. 7 is a sectional view showing the outline of the structure of the terminal parts. Fig. 8 is an explanatory diagram showing a method for manufacturing an electrolytic treatment jig; (a) shows a state where a fitting portion is formed on a base body; (b) shows a state where an electrode part and a terminal part are embedded in a base body; (c) is a state where The electrode parts and terminal parts are fixed to the base. FIG. 9 is an explanatory view showing a state where a puddle of a plating solution is formed on a wafer. FIG. 10 is an explanatory view showing a state of a plating solution in which a terminal is brought into contact with a wafer and a direct electrode is brought into contact with the wafer. FIG. 11 is a diagram showing a state where a DC voltage is continuously applied between the indirect electrode and the wafer, and a DC voltage is pulsed between the direct electrode and the wafer. FIG. 12 is an explanatory diagram showing how a voltage is applied between the indirect electrode and the wafer. FIG. 13 is an explanatory diagram showing how a voltage is applied between the direct electrode and the wafer. FIG. 14 is a sectional view showing the outline of the structure of other electrode parts. FIG. 15 is a sectional view showing the outline of the structure of other electrode parts. FIG. 16 is a plan view showing the outline of the structure of another electrolytic treatment jig from the surface side. FIG. 17 is a cross-sectional view showing a schematic configuration of a fluid supply part.

Claims (16)

An electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed, comprising: (1) having a flat plate shape, forming a depression on the surface, and forming a communication from the back to the depression; The base of the through-hole in the depression and an electrode part provided to be embedded in at least the depression; The electrode part is provided with a direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; Inside the through hole, a direct electrode wiring connected to the direct electrode is provided. According to the electrolytic treatment jig described in item 1 of the scope of the patent application, the electrode part further includes an insulative electrode which is provided to be insulated from the treatment liquid and is used to form an electric field in the treatment liquid. According to the electrolytic treatment jig described in item 2 of the scope of patent application, the inside of the through hole is provided with a wiring for connecting the electrode to the indirect electrode; the wiring for the indirect electrode is provided to cover the direct through an insulator. Around the electrode wiring. The electrolytic treatment jig according to any one of claims 1 to 3 in the scope of the patent application, wherein a sealing member is provided between the electrode part and the depression. For example, the electrolytic treatment jig described in any one of claims 1 to 3, further comprising a terminal part provided to be embedded in at least the depression; the terminal part is provided for contacting the substrate to be processed, and A terminal for applying a voltage between the substrate to be processed and the direct electrode. According to the electrolytic treatment jig described in item 5 of the scope of the patent application, wherein: a sealing member is provided between the terminal part and the depression. The electrolytic treatment jig as described in any one of claims 1 to 3, further comprising a fluid supply part that is embedded in at least the depression; the fluid supply part is formed to penetrate from the front surface to the back surface to make the fluid The flow path of circulation. A manufacturing method of an electrolytic treatment jig for performing electrolytic treatment on a substrate to be processed using a processing liquid supplied to the substrate to be processed is characterized in that: a substrate having a flat plate shape is formed with a depression on the surface and The first step of communicating with the through hole from the back to the depression, and the second step of providing an embedded electrode part in at least the depression; ； The electrode part is provided with contact with the treatment liquid, and is in contact with the substrate. A direct electrode for applying a voltage between the processing substrates; (2) In the second step, a direct electrode wiring connected to the direct electrode is provided inside the through hole. For example, the method for manufacturing an electrolytic treatment jig as described in item 8 of the scope of the patent application, wherein the electrode part further includes an insulative electrode provided to be insulated from the treatment liquid and used to form an electric field in the treatment liquid. For example, in the method for manufacturing an electrolytic treatment jig as described in item 9 of the scope of the patent application, in the second step, a connection is provided to the inside of the through hole so as to cover the periphery of the direct electrode wiring with an insulator. The indirect electrode is connected to the electrode wiring. The method for manufacturing an electrolytic treatment jig according to any one of claims 8 to 10 in the scope of the patent application, wherein in the second step, a sealing member is provided between the electrode part and the depression. The method for manufacturing an electrolytic treatment jig as described in any one of claims 8 to 10 in the scope of the patent application, further comprising a third step of providing terminal fittings at least in the depressions after the first step; It is provided with a terminal for contacting the substrate to be processed and applying a voltage between the substrate to be processed and the direct electrode. For example, in the method for manufacturing an electrolytic treatment jig as described in item 12 of the scope of the patent application, in the third step, a sealing member is provided between the terminal part and the depression. The method for manufacturing an electrolytic treatment jig according to any one of claims 8 to 10 in the scope of the patent application, further comprising a fourth step of providing an embedded fluid supply part in at least the recessed portion after the first step; The fluid supply part forms a flow path penetrating from the front surface to the back surface to circulate the fluid. An electrolytic processing device for electrolytically processing a substrate to be processed, comprising: a substrate holding portion that holds the substrate to be processed; and a processing liquid supply portion that supplies a processing liquid to the substrate to be processed held by the substrate holding portion, and An electrolytic treatment jig for performing an electrolytic treatment on a substrate to be processed held by the substrate holding portion; The electrolytic treatment jig has a flat plate shape, a depression formed on a surface, and a communication formed from a back surface to the depression. The base of the through-hole in the depression and an electrode part provided to be embedded in at least the depression; The electrode part is provided with a direct electrode for contacting the processing liquid and applying a voltage to the substrate to be processed; Inside the through hole, a direct electrode wiring connected to the direct electrode is provided. The electrolytic treatment device according to item 15 of the scope of application for patent, wherein the electrode part further includes an insulative electrode which is provided to be insulated from the treatment liquid and is used to form an electric field in the treatment liquid.