TW201818789A - RF plasma power supply system for variable impedance load, automatic matching device thereof and matching method thereof - Google Patents

Abstract

The present invention relates to an RF plasma power supply system for a variable impedance load, an automatic matching device and a matching method thereof. The matching method has steps of: collecting multiple impedances of an variable impedance load, wherein a impedance rage is consisted of the multiple impedances; calculating a center impedance value of the impedance range; and setting the center impedance value as a preset impedance; adjusting a variable impedance element of the automatic matching device and to match an output impedance thereof with the preset impedance. No matter what a preset impedance of the variable impedance load is, a matching time of the automatic matching device from preset impedance to the present impedance is effectively reduced when an RF plasma power supply outputs RF power to the variable impedance load though the automatic matching device since the preset impediment is the center impedance value of the impedance range.

Description

Radio frequency plasma power supply system for multi-impedance load and automatic matching device and matching method thereof

The present invention relates to a radio frequency plasma power supply device for a semiconductor device, and more particularly to a matching method for a matcher of a radio frequency plasma power supply device.

With the advancement and improvement of semiconductor equipment manufacturers, foundry semiconductor manufacturers have expanded from 8 吋 fabs to 12 吋 fabs, for plasma processing semiconductor devices, 12 吋 wafers. The RF plasma power supply system used in the plasma processing equipment is quite different from the RF plasma power supply system used in the plasma processing equipment for 8-inch wafers.

Referring to FIG. 8 and FIG. 9 , a PECVD plasma processing apparatus 20 ′ for an 8-inch wafer is taken as an example, and the RF plasma power supply system includes a RF power generator 30 and a fixed matching network 50; The RF power generator 30 is coupled to a plasma reaction chamber 21' of the PECVD plasma processing apparatus through the fixed matching network 50. In the PECVD process of 8-inch wafers, a fixed matching network 50 (shown in FIG. 8) is used with a fixed-frequency RF power generator 30 and one, considering the simple structure, easy control, and low cost. Compensated feedback output power control; this allows for consistent control and coating results in the early Dual Chamber configuration.

However, as the ever-changing process requirements have more requirements for line width and uniformity, and different process recipes will cause the impedance values of the plasma reaction chamber 21' to be different, the fixed matching network 50 has become increasingly difficult. Adapting to the new process recipe, as shown in FIG. 10, the fixed impedance value of the fixed matching network 50 cannot be matched with the impedance value of the plasma reaction chamber 21' for different processes, resulting in the reflected power as shown in FIG. High, and especially when the voltage standing wave ratio (VSWR) of the impedance value of the plasma reaction chamber 21' exceeds 3:1, the output power of the RF plasma power supply system becomes more and more unstable, and sometimes even electricity. The igniting failure of the slurry causes the uniformity of wafer coating uniformity in the plasma reaction chamber 21' to become larger and larger, as shown in Fig. 12, the minimum film thickness: 236.3 Å, the maximum film thickness: 270.3 Å, the average film thickness: 250.07 Å, and the standard deviation of the film thickness is 10.25, and the uniformity of wafer coating uniformity is quite high.

Due to the cost of building a 12-inch fab, the foundry still needs 8 吋 fabs to contribute a certain amount of capacity; therefore, the foundry continues to upgrade the semiconductor equipment of 8 吋 fabs in response to the ever-changing process. Demand; therefore, the current RF plasma power supply system for HDPCVD plasma processing equipment for 8-inch wafers is in urgent need of improvement to ensure film thickness uniformity of wafer coating and extend the service life of 8-inch wafer fabs.

In view of the above technical defects in the radio frequency plasma power supply system using a fixed matching network, the main object of the present invention is to provide a radio frequency plasma power supply system and an automatic matching device and matching method thereof for multi-variable impedance load, which ensure The uniformity of wafer coating film thickness uniformity in the plasma reaction chamber is within a tolerable range.

The main technical means used to achieve the above purpose is to make the matching method of the automatic matching device include: collecting a complex impedance value of a multi-variable impedance load; wherein the complex impedance value constitutes an impedance range; calculating a central value of the impedance range And setting the center value as a preset impedance value; in the initial matching phase, adjusting an adjustable impedance component of an automatic matching device to match the output impedance value to the preset impedance value; and in the automatic matching phase Adjusting the adjustable impedance component of the automatic matcher such that the output impedance value of the automatic matcher matches the impedance value of the current load.

According to the above matching method, when the RF plasma power source is output to the load through the automatic matching device, regardless of whether the impedance of the current load is any one of the complex impedance values, the preset impedance value is a central value of the impedance range, and the automatic The matching time of the matching device from the preset impedance value to the current load impedance value can be effectively reduced, the reflected power is reduced, and the plasma ignition time is relatively accelerated.

The main technical means used for the above purposes is that the automatic matching device comprises: a matching network comprising at least one fixed impedance element and at least one variable impedance element; at least an actuator, each of the actuators Connecting corresponding variable impedance elements respectively; and a controller electrically connected to each of the actuators and storing a predetermined impedance value; wherein the predetermined impedance value is a center value of an impedance range, and the impedance range is Constructed by a complex impedance value of a variable impedance load; the controller has an initial matching program and an automatic matching program; wherein: in the initial matching program, the controller is driven by the controller to adjust the Transforming the impedance value of the impedance component such that the output impedance value of the matching network matches the predetermined impedance value; in the automatic matching procedure, the controller drives the actuator to adjust the impedance value of the variable impedance component, so that The output impedance value of the matching network matches the impedance value of the current load.

The automatic matching device of the present invention firstly adjusts the output impedance to the preset impedance value in the initial matching procedure. Since the preset impedance value is the central value of the load impedance range, once the RF power source is input to the plasma reaction chamber. When entering the automatic matching program, the matching network matches the impedance value of the current load to the current load, and the impedance matching time can be effectively reduced, the reflected power is reduced, and the plasma ignition time is relatively accelerated.

The main technical means used to achieve the above objectives is to make the RF plasma power supply system include: a control computer with built-in process recipes and load impedance values for each process recipe. The control computer system draws from a process. The control host transmits a process recipe to a plasma processing device, and outputs a control command including a load impedance value of the process recipe; an RF power generator for generating a RF power source; and an automatic matcher coupled to The control computer receives the control command and is coupled to the RF power generator for coupling the RF power source to the plasma reaction chamber; wherein the automatic matcher comprises: a matching network Included in at least one fixed impedance element and at least one variable impedance element; at least an actuator, each of which is respectively connected to a corresponding variable impedance element; and a controller electrically connected to each of the actuators, and Storing a preset impedance value; the controller has an initial matching program and an automatic matching program; wherein: in the initial matching program, The controller drives the actuator to adjust an impedance value of the variable impedance component such that an output impedance value of the matching network matches the predetermined impedance value; in the automatic matching program, the controller reads from the control computer The control command, after identifying the load impedance value of the received control command, drives the actuator to adjust the impedance value of the variable impedance component such that the output impedance value of the matching network matches the identified load impedance value.

The above-mentioned radio frequency plasma power supply system of the present invention further increases the load impedance value of the plasma reaction chamber in performing the different process cooperation when the process control host transmits the new process recipe to the plasma reaction chamber. Therefore, when the control computer simultaneously captures the new process recipe, it outputs a control command including the load impedance value of the process recipe to the automatic matcher; when the controller of the automatic matcher receives the control command, The load impedance value of the new process recipe to be performed in the plasma reaction chamber can be identified, and the actuator is adjusted to adjust the variable impedance element to match the output impedance of the matching network to the impedance value of the plasma processing chamber of the new process. . Therefore, the impedance matching time of the automatic matching device can be further reduced, and the reflected power is reduced to accelerate the plasma ignition time of the plasma reaction chamber.

The invention relates to a radio frequency plasma power supply system and an automatic matching device and matching method thereof for a multi-variable impedance load (such as a reaction chamber of different processes for HDPCVD plasma processing equipment for 8 吋 wafers); The embodiment details the technical contents of the present invention.

Referring first to FIG. 1 and FIG. 2, a first preferred embodiment of the automatic matching device 10 of the present invention includes a matching network 11, at least an actuator 12a, 12b, and a controller 13.

The matching network 11 includes at least one fixed impedance element 111 and at least one variable impedance element 112a, 112b. Each of the fixed impedance elements 111 and each of the variable impedance elements 112a, 112b can form an L shape and an inverted L. a matching network structure, such as a shape, a shape, or a T shape; this embodiment is an L-shaped matching network 11 and includes a first variable capacitor CL, an inductor L, and a second variable capacitor CT; The first variable capacitor CL is connected between a RF input terminal RF_in and the ground GND, and the inductor L is connected in series with the second variable capacitor CT, and the inductor L and the second variable capacitor are connected in series. The CT system is connected between the RF input terminal RF_in and a RF output terminal RF_out. Preferably, the first or second variable capacitors CL, CT are more than a variable vacuum capacitor.

Each of the actuators 12a, 12b is connected to the corresponding variable impedance element 112a, 112b to adjust the impedance value of each of the variable impedance elements 112a, 112b; in the embodiment, the automatic matching device 10 includes a first actuator 12a and a second actuator 12b for adjusting the positions of the first and second variable impedance elements 112a, 112b, respectively, to change the first and second variable impedance elements 112a, 112b Impedance value. Each of the actuators 12a, 12b can select an actuator of a similar function such as a servo motor or a stepping motor; in addition, the stepping motor does not have a brush, and the dust can be easily contaminated for a long time.

The controller 13 is electrically connected to each of the actuators 12a, 12b; in the embodiment, the controller 13 is electrically connected to the first and second actuators 12a, 12b to drive the first and The second actuators 12a, 12b adjust the positions of the first and second variable capacitors CL, CT to change the output impedance value of the matching network 11. The controller 13 stores a preset impedance value calculated according to the complex impedance value of the load coupled to the automatic matching device 10; that is, PECVD for 8 吋 wafers. For example, one of the plasma reaction chambers 21 of the plasma processing apparatus 20 performs load impedance values ZL1 to ZLn measured by n different process recipes; preferably, the present embodiment measures the plasma. The reaction chamber 21 performs the impedance value of the first stage of each of the process recipes as the load impedance value. As shown in FIG. 3A, the load impedance values ZL1 to ZLn are marked in a Smith chart 40. On the Smith chart 40, the positions of the load impedance values ZL1 to ZLn constitute an impedance range. Within the impedance range, a position closest to each of the impedance values ZL1 to ZLn is found, which is approximately the center point position of the impedance range, and the impedance value corresponding to the Smith chart 40 corresponding to the position is the predetermined impedance value Z0.

The controller 13 has an initial matching program and an automatic matching program built in. In the initial matching procedure, the first and second actuators 12a, 12b are driven by the controller 13 to adjust the impedance values of the first and second variable impedance elements 112a, 112b to cause the matching network 11 The output impedance value matches the preset impedance value; and in the next automatic matching procedure, the first and second actuators 12a, 12b are driven by the controller 13 to adjust the first and second variable impedances. The impedance values of the components 112a, 112b are such that the output impedance value of the matching network 11 matches the impedance value of the current load; that is, when the automatic matcher 10 is turned on, the initial matching procedure is performed first, so that the output impedance value is pre- The impedance value Z0 is set. When the RF power generator 30 outputs the RF power to the plasma reaction chamber 21 through the automatic matching device 10, the nth process (the impedance value is ZLn) performed by the plasma reaction chamber 21 is performed. The controller 13 of the automatic matching device 10 enters the automatic matching program, so that the output impedance value Zout of the matching network 11 is adjusted from the preset impedance value Z0 to the current impedance value ZLn of the plasma reaction chamber. That is, as shown in FIG. 3B, to complete impedance matching.

As shown in FIG. 5, the automatic matching device 10 of the present invention performs impedance matching on the plasma reaction chambers of 21 different processes, and the value of the reflected power per matching is close to 0, compared with FIG. The invention can be reduced from the average reflected power of 114.25 W to 1.4 W; therefore, replacing the fixed matching network of the PECVD plasma processing apparatus for 8 吋 wafers with the automatic matching device 10 of the present invention will be obtained as shown in FIG. 6 The thickness of the wafer coating film thickness; the minimum film thickness: 246.5 Å, the maximum film thickness: 260.1 Å, the average film thickness: 251.6 Å; the standard deviation of the film thickness of such coating is only 3.97, compared with the measurement of Figure 10 The resulting film thickness standard deviation is less than 10.25.

In summary, as shown in FIG. 7, the matching method of the automatic matching device of the present invention measures the load impedance value of the plasma reaction chamber for different process recipes to collect a multi-variable impedance load (for different processes) a complex load impedance value of the plasma reaction chamber of the formulation; wherein the complex load impedance value constitutes an impedance range S10; then, the center value of the impedance range is calculated, and the center value is set to a predetermined impedance value S11 Adjusting an adjustable impedance component of an automatic matching device to match the output impedance value to the predetermined impedance value S12; and adjusting the adjustable impedance component of the automatic matching device in the automatic matching phase, The output impedance value of the automatic matcher is matched to the impedance value S13 of the current load (plasma reaction chamber). In this way, when the RF plasma power source is output to the load through the automatic matching device, regardless of the impedance of the current load being any one of the complex impedance values, since the preset impedance value is the center value of the impedance range, the automatic matching device is The matching time of the preset impedance value automatically matched to the current load impedance value can be effectively reduced, and the reflected power is reduced to relatively accelerate the plasma ignition time.

Referring to FIG. 4, it is a radio frequency plasma power supply system of the present invention, which includes a control computer 100, an RF power generator 30, and an automatic matching device 10'; wherein the RF power generator 30 transmits the The automatic matching device 10' is coupled to one of the plasma processing chambers 21 of the plasma processing apparatus 20 to provide a fixed frequency (eg, 13.56 MHz) RF power to the plasma reaction chamber 21; the control computer 100 The system is connected to the automatic matching device 10' and connected to a process control host 22 of the plasma reaction chamber 21; wherein the process control host 22 is provided with a plurality of process recipes for the user to select one of the process recipes. Thereafter, the process control host 22 transfers the selected process recipe to the plasma processing apparatus 20, and the plasma processing apparatus 20 transfers the process recipe to the corresponding plasma reaction chamber 21 to prepare the process recipe. The RF power generator 30 is configured to generate a RF power source and couple the RF power source to the plasma reaction chamber 21 through the automatic matching device 10'.

The control computer 100 is coupled to the process control host 22, so that the process recipe delivered by the process control host 22 to the plasma processing device 20 can be simultaneously captured. Since the control computer 100 has a plurality of process recipes and load impedance values of each process recipe, when the control computer 100 retrieves the process recipe from the process control host 22, it will generate according to the currently obtained process recipe. a control command including a load impedance value of the process recipe, and outputting the control command to the automatic matcher 10'; preferably, the control computer 100 can further convert the complex process recipe and the load impedance value of each process recipe Organize into a comparison table to compare the corresponding load impedance values of the processed process recipes.

The automatic matching device 10' is coupled to the control computer 100 to receive the control command; the automatic matching device 10' includes a matching network 11, at least an actuator 12a, 12b and a controller 13; in this example The matching network 11 and at least the actuators 12a, 12b are the same as those of FIG. 2, please refer to the description of FIG. 2, and details are not described herein again. The controller 13 of this embodiment also stores a preset impedance value, and has an initial matching program and an automatic matching program built in.

In the initial matching procedure, the controller 13 in the automatic matching device 10' drives the first and second actuators 12a, 12b to adjust the impedance values of the first and second variable impedance elements 112a, 112b. The output impedance value of the matching network 11 is matched to the preset impedance value; and the automatic matching procedure is performed after the automatic matching device 10' receives the control instruction; wherein the controller 13 identifies the received control from the control The load impedance value in the control command of the computer 100 drives the first and second actuators 12a, 12b to adjust the impedance values of the first and second variable impedance elements 112a, 112b to cause the matching network 11 The output impedance value matches the identified load impedance value.

Since the process control host 22 transmits a new process recipe to the plasma processing apparatus 20, the plasma reaction chamber 21 executing the new process recipe will have a preparation time before receiving the process recipe to start the process, and the present invention The control computer 100 of the RF plasma power supply system can transmit a control command corresponding to the process recipe to the automatic matching device 10' during the preparation time, and the controller 13 of the automatic matching device 10' identifies the plasma. The load impedance value of the new process to be performed in the reaction chamber 21, and the first and second actuators 12a, 12b are driven before the plasma reaction chamber 21 performs the process, and the first and second actuators are adjusted. Variable impedance elements 112a, 112b to adjust the output impedance value of the matching network 11 from the predetermined impedance value to the load impedance value of the process; thus, once the plasma reaction chamber 21 begins the process, the automatic The matcher 10' can immediately perform impedance matching with the plasma reaction chamber 21. Therefore, the automatic matching device 10' of the present embodiment is further shortened in comparison with the impedance matching time of the automatic matching device 10 of Fig. 2, reducing the reflected power and rapidly igniting the plasma reaction chamber.

In summary, the automatic matching device of the present invention has a larger matching range than the fixed matching network, and effectively reduces the reflected power and shortens the matching time with the load, and the plasma ignition time of the fast plasma reaction chamber. .

The above is only the embodiment of the present invention, and is not intended to limit the scope of the present invention. The present invention has been disclosed by the embodiments, but is not intended to limit the invention, and any one of ordinary skill in the art, In the scope of the technical solutions of the present invention, equivalent modifications may be made to the equivalents of the embodiments of the present invention without departing from the technical scope of the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments are still within the scope of the technical solutions of the present invention.

10, 10'‧‧‧Automatic matcher
100‧‧‧Control computer
11‧‧‧ Matching network
111‧‧‧Fixed impedance components
112a, 112b‧‧‧Variable impedance components
12a, 12b‧‧‧ actuator
20, 20'‧‧‧ Plasma processing equipment
21, 21'‧‧‧ plasma reaction chamber
30‧‧‧RF power generator
40‧‧‧Smith Chart
50‧‧‧Fixed matching network

Figure 1 is a schematic view showing the connection of the first preferred embodiment of the automatic matching device of the present invention. Figure 2: The equivalent circuit diagram of Figure 1. FIG. 3A is a Smith chart of the relationship between a predetermined impedance value and a complex load impedance value of the automatic matching device of the present invention in an initial matching phase. FIG. 3B is a Smith chart of the relationship between the output impedance value and the complex load impedance value of the automatic matcher of the present invention in the automatic matching phase. Figure 4 is a system architecture diagram of the RF plasma power supply system of the present invention. Figure 5: Reflected power diagram of Figure 2. Figure 6 is a graph showing the film thickness of the plasma reaction chamber of Figure 2 measured by 20 different process recipes. Figure 7 is a flow chart showing the matching method of the automatic matcher of the present invention. Figure 8: Schematic diagram of a connection with a fixed matching network. Figure 9: Equivalent circuit diagram of Figure 8. Figure 10: Smith chart of the distribution of fixed impedance values and complex load impedance values for a fixed matching network. Figure 11: Reflected power diagram of Figure 9. Figure 12 is a graph showing the thickness of the coating film measured by a fixed matching network in combination with a plasma reaction chamber measured in 20 different process recipes.

Claims (11)

A matching method for an automatic matching device for a multi-variable impedance load, comprising: collecting a complex impedance value of a multi-variable impedance load; wherein the complex impedance value defines an impedance range; calculating a center value of the impedance range, and setting the The center value is a predetermined impedance value; in the initial matching phase, adjusting at least one adjustable impedance component of an automatic matcher to match the output impedance value to the preset impedance value; and adjusting the The at least one adjustable impedance component of the automatic matcher causes the output impedance value of the automatic matcher to match the impedance value of the current load. The matching method of the automatic matching device according to claim 1, wherein the impedance range is marked by a complex impedance value of the load on a Smith chart, and the impedance range is formed by positions of the impedance values on the Smith chart. The preset impedance value is the impedance value of the Smith chart corresponding to the center point position of the impedance range. An automatic matching device for a multi-variable impedance load, comprising: a matching network comprising at least one fixed impedance component and at least one variable impedance component; at least an actuator, each of the actuators respectively connected to a corresponding one a variable impedance element; and a controller electrically connected to each of the actuators and storing a predetermined impedance value; wherein the predetermined impedance value is a center value of an impedance range, and the impedance range is changed by a variable The complex impedance value of the impedance load is defined; the controller has an initial matching program and an automatic matching program; wherein: in the initial matching program, the controller drives the actuator to adjust the variable impedance The impedance value of the component matches the output impedance value of the matching network to the predetermined impedance value; in the automatic matching procedure, the controller drives the actuator to adjust the impedance value of the variable impedance component to make the match The output impedance value of the network matches the impedance value of the current load. The automatic matching device according to claim 3, wherein: the matching network is an L-shaped matching network, and includes an RF input terminal, a RF output terminal and a ground terminal; the fixed impedance component of the matching network Is an inductor, and the at least one variable impedance component comprises a first variable capacitor and a second variable capacitor; wherein the first variable capacitor is respectively connected between the RF input end and the ground end And the inductor and the second variable capacitor are connected in series, and the series inductor and the second variable capacitor are connected between the RF input end and the RF output end; the at least one actuator includes one a first actuator and a second actuator; wherein the first actuator is coupled to the first variable capacitor and the second actuator is coupled to the second variable capacitor; The controller drives the first and second actuators to adjust the positions of the first and second variable capacitors correspondingly. The automatic matching device of claim 3 or 4, wherein each of the variable impedance elements is an adjustable vacuum capacitor. The automatic matching device according to claim 5 is applied to a PECVD plasma processing apparatus for an 8-inch wafer. A radio frequency plasma power supply system for a multi-variable impedance load, comprising: a control computer having a plurality of process recipes and load impedance values of each process recipe, the control computer is transferred from a process control host to a a process recipe for the plasma reaction chamber, and outputting a control command including a load impedance value of the process recipe; an RF power generator for generating an RF power source; and an automatic matcher coupled to the control computer Receiving the control command and coupled to the RF power generator for coupling the RF power source to the plasma reaction chamber; wherein the automatic matcher comprises: a matching network, comprising at least one fixed An impedance element and at least one variable impedance element; at least an actuator, each of the actuators respectively connected to the corresponding variable impedance element; and a controller electrically connected to each of the actuators and storing a preset Impedance value; the controller has an initial matching program and an automatic matching program; wherein: in the initial matching program, the controller drives the actuation Adjusting the impedance value of the variable impedance component to match the output impedance value of the matching network to the preset impedance value; in the automatic matching program, the controller reads the control command from the control computer for identification After receiving the load impedance value of the control command, the actuator is driven to adjust the impedance value of the variable impedance element such that the output impedance value of the matching network matches the identified load impedance value. The radio frequency plasma power supply system of claim 7, wherein: the matching network is an L-shaped matching network, and includes a radio frequency input end, a radio frequency output end, and a ground end; The fixed impedance component is an inductor, and the at least one variable impedance component comprises a first variable capacitor and a second variable capacitor; wherein the first variable capacitor is respectively connected to the RF input terminal and grounded Between the terminals, the inductor is connected in series with the second variable capacitor, and the series inductor and the second variable capacitor are connected between the RF input terminal and the RF output terminal; the at least one actuator The system includes a first actuator and a second actuator; wherein the first actuator is coupled to the first variable capacitor and the second actuator is coupled to the second variable capacitor; And the first and second actuators are driven by the controller to adjust the positions of the first and second variable capacitors correspondingly. The RF plasma power supply system of claim 8 or 9, wherein each of the variable impedance elements is an adjustable vacuum capacitor. The radio frequency plasma power supply system of claim 9, wherein the radio frequency power generator generates a fixed frequency radio frequency power source. The RF plasma power supply system according to claim 9 is applied to a PECVD plasma processing apparatus for an 8-inch wafer.