TW201817044A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

A light emitting device including at least one light emitting unit, a wavelength conversion adhesive layer and a reflective protecting element is provided. The light emitting unit has an upper surface and a lower surface opposite to each other. The light emitting unit includes two electrode pads, and the two electrode pads are located at the lower surface. The wavelength conversion adhesive layer is disposed at the upper surface. The wavelength conversion adhesive layer includes a lower concentration fluorescent layer and a higher concentration fluorescent layer. The higher concentration fluorescent layer is located between the lower concentration fluorescent layer and the light emitting unit. The reflective protecting element covers the light emitting unit and a part of the wavelength conversion adhesive layer, and at least exposes the two electrode pads and the lower concentration fluorescent layer. A width of the higher concentration fluorescent layer is WH. A width of the lower concentration fluorescent layer is WL. A width of the light emitting unit is WE. The light emitting device further satisfies following inequality: WE < WL, WH < WL and 0.8 < WH/WE ≤ 1.2. Furthermore, a manufacturing method of the light emitting device is also provided.

Description

Light emitting device and manufacturing method thereof

The invention relates to a light-emitting device and a manufacturing method thereof, and in particular to a light-emitting device using a light-emitting diode as a light source and a manufacturing method thereof.

In a general white light emitting diode structure, a blue light emitting diode chip is covered with a layer of yellow fluorescent powder. The white light emitting diode structure emits white light by transmitting blue light through the blue light emitting diode chip. Part of the blue light is converted into yellow light by the yellow phosphor on it, and the yellow light is combined with other parts of the blue light to achieve The effect of emitting white light. Because the blue light emitted by the blue light-emitting diode wafer has a high degree of directivity, the blue light that deviates from the optical axis at a large angle is weaker, and the blue light closer to the optical axis is stronger. Therefore, when blue light of different intensities is irradiated to the phosphor, the color temperature of the white light emitted closer to the optical axis is higher (ie, the blue light ratio is higher), and the color temperature of the white light emitted farther from the optical axis is lower (ie, the blue light ratio). low). The above phenomenon is also referred to as the yellow circle phenomenon, and this phenomenon causes the uneven color temperature of the light emitting diode structure.

The invention provides a light emitting device, and the color temperature of light emitted by the light emitting device is uniform.

The invention provides a method for manufacturing a light-emitting device. The color temperature of light emitted by the light-emitting device manufactured is uniform.

An embodiment of the present invention provides a light emitting device including at least one light emitting unit, a wavelength conversion adhesive layer, and a reflection protection member. The light emitting unit has an upper surface and a lower surface opposite to each other. The light emitting unit includes two electrode pads, and the two electrode pads are located on a lower surface of the light emitting unit. The wavelength conversion adhesive layer is disposed on the upper surface of the light emitting unit. The wavelength conversion adhesive layer includes a low concentration fluorescent adhesive layer and a high concentration fluorescent adhesive layer, and the high concentration fluorescent adhesive layer is located between the low concentration fluorescent adhesive layer and the light emitting unit. The reflection protection member covers the light emitting unit and a part of the wavelength conversion adhesive layer, and at least the two electrode pads and the low-concentration fluorescent adhesive layer of the light emitting unit are exposed. The width of the high-concentration fluorescent adhesive layer is W _H. The width of the low-concentration fluorescent adhesive layer is W _L. The width of the light emitting unit is W _E. The light-emitting device further satisfies the following inequality: W _E <W _L , W _H <W _L and 0.8 <W _H / W _E ≦ 1.2.

In an embodiment of the present invention, the wavelength conversion adhesive layer further includes a first platform portion and a plurality of second platform portions. The first platform portion includes a high-concentration fluorescent adhesive layer and a first portion of a low-concentration fluorescent adhesive layer, and each second platform portion includes a second portion of the low-concentration fluorescent adhesive layer and a first portion of the low-concentration fluorescent adhesive layer. It is connected to the second part of the low-concentration fluorescent adhesive layer.

In an embodiment of the present invention, the above-mentioned reflection protection member has a concave surface, and the concave surface is recessed toward the wavelength conversion adhesive layer.

In an embodiment of the present invention, the light-emitting device further includes a light-transmitting adhesive layer. The light emitting unit further includes a side surface connected to the upper surface and the lower surface. The transparent adhesive layer is disposed on the low-concentration fluorescent adhesive layer and extends to the side surface of the light-emitting unit.

In an embodiment of the present invention, the reflection protection member covers the wavelength conversion adhesive layer to expose a part of the side surface of the wavelength conversion adhesive layer.

In an embodiment of the present invention, the above-mentioned reflection protection member has a reflection surface, and the reflection surface is in contact with the light emitting unit.

In an embodiment of the present invention, the first side of the reflective surface is in contact with the light emitting unit, and the second side of the reflective surface faces the wavelength conversion adhesive layer and extends away from the light emitting unit.

In an embodiment of the present invention, the reflective surface is a curved surface.

An embodiment of the present invention provides a method for manufacturing a light emitting device, which includes forming a wavelength conversion adhesive layer, and the wavelength conversion adhesive layer includes a low-concentration fluorescent adhesive layer and a high-concentration fluorescent adhesive layer. A plurality of light emitting units are provided. A plurality of grooves are formed in the wavelength conversion adhesive layer to define a plurality of bonding areas between the grooves, and the width of the high-concentration fluorescent adhesive layer in the bonding area is W _H , and the low-concentration fluorescent adhesive layer is The width is W _L and the width of the light-emitting unit is W _E. This step more satisfies the following inequalities: W _E <W _L , W _H <W _L, and 0.8 <W _H / W _E ≦ 1.2. The light emitting units are respectively bonded to the high-concentration fluorescent adhesive layers in the bonding regions. A reflection protection member is formed on the wavelength conversion adhesive layer and between the light emitting units and fills the grooves, wherein the reflection protection member exposes the electrode pads of the light emitting units. A cutting process is performed along these grooves to form a plurality of light emitting devices.

In an embodiment of the present invention, in the step of forming the grooves in the wavelength conversion adhesive layer, the method further includes: removing a local high-concentration fluorescent adhesive layer and a local low-concentration fluorescent adhesive layer, so as to A plurality of first sub-trenches are formed. The first sub-grooves respectively form a plurality of first mesa portions in the bonding regions, and each of the first mesa portions further includes a first portion of the high-concentration fluorescent adhesive layer and a first portion of the low-concentration fluorescent adhesive layer. The local low-concentration fluorescent adhesive layer is removed to form a plurality of second sub-grooves in the first sub-grooves, and the second sub-grooves respectively form a plurality of second land portions in the bonding areas, where Each second platform portion further includes a second portion of the low-concentration fluorescent adhesive layer, and the first portion of the low-concentration fluorescent adhesive layer is connected to the second portion of the low-concentration fluorescent adhesive layer. A trench includes a first sub-trench and a second sub-trench.

In an embodiment of the present invention, before the step of bonding the light-emitting units to the high-concentration fluorescent adhesive layers in the bonding areas, the method further includes: forming a plurality of light-transmitting adhesive layers on the bonding areas, respectively. Of these high-concentration fluorescent glue layers.

In an embodiment of the present invention, in the above-mentioned steps in which the light-emitting units are respectively bonded to the high-concentration fluorescent adhesive layers in the bonding regions, the light-emitting units are respectively bonded to the high-concentration through the light-transmitting adhesive layers. Fluorescent adhesive layer.

In an embodiment of the present invention, after the step of forming the reflection protection member on the wavelength conversion adhesive layer and between the light-emitting units and filling the grooves, the method further includes: standing the reflection protection member so that The reflection protection member forms a concave surface recessed in the direction of the wavelength conversion adhesive layer, and cures the reflection protection member.

Based on the above, in the light-emitting device of the embodiment of the present invention, the width of the high-concentration fluorescent adhesive layer is W _H , the width of the low-concentration fluorescent adhesive layer is W _L , and the width of the light-emitting unit is W _E. The light emitting device further satisfies the following inequalities: W _E <W _L , W _H <W _L and 0.8 <W _H / W _E ≦ 1.2. By satisfying the design of the above inequality, the color temperature of the colored light emitted by the light-emitting device according to the embodiment of the present invention at different angles is relatively consistent. Since one step of the method for manufacturing the light emitting device according to the embodiment of the present invention conforms to the above inequality, the color temperature of the colored light emitted by the light emitting device manufactured by the manufacturing method is more consistent at different angles.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the present invention. Please refer to FIG. 1 first. In this embodiment, the light emitting device 100 a includes a light emitting unit 110 a and a reflection protection member 120. The light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, a side surface 116a connecting the upper surface 112a and the lower surface 114a, and a first electrode pad 113 and a second electrode located on the lower surface 114a and separated from each other.垫 115。 Mat 115. The reflective protection member 120 covers the side surface 116a of the light emitting unit 110a and exposes at least a portion of the upper surface 112a and at least a portion of a first bottom surface 113a of the first electrode pad 113 and at least a portion of a second bottom surface of the second electrode pad 115. 115a.

More specifically, as shown in FIG. 1, the upper surface 112 a of the light-emitting unit 110 a of this embodiment is aligned with a top surface 122 of the reflection protection member 120, and a bottom surface 124 of the reflection protection member 120 and the first electrode pad 113 A first bottom surface 113a and a second bottom surface 115a of the second electrode pad 115 are aligned, and the reflection protection member 120 can cover or expose the lower part of the light emitting unit 110a located between the first electrode pad 113 and a second electrode pad 115. Surface 114a. In this embodiment, the side surface 116a of the light-emitting unit 110a is perpendicular to the upper surface 112a and the lower surface 114a, but is not limited thereto. The light-emitting unit 110a is, for example, a light-emitting diode. Including, but not limited to, between 315 nanometers and 780 nanometers, light-emitting diodes include, but are not limited to, ultraviolet, blue, green, yellow, orange, or red light-emitting diodes.

The reflectance of the reflection protection member 120 is at least greater than 90%. That is, the reflection protection member 120 of this embodiment has a characteristic of high reflectivity. The material of the reflection protection member 120 is a polymer material including a highly reflective particle. The highly reflective particles are, for example, but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is not limited to, for example, epoxy resin or silicone resin. In addition, the material of the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a in this embodiment is a metal material or a metal alloy, such as gold, aluminum, tin, silver, bismuth, indium, or a combination thereof, but not This is the limit.

In this embodiment, the reflective protection member 120 covers the side surface 116a of the light emitting unit 110a, and exposes the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115 of the light emitting unit 110a to emit light. The device 100a does not need to use a conventional supporting bracket to support and fix the light-emitting unit 110a, and can effectively reduce the package thickness and manufacturing cost. At the same time, the reflection protection 120 with high reflectance can also effectively improve the light-emitting unit 110a's Toward light efficiency.

It must be noted here that the following embodiments follow the component numbers and parts of the previous embodiments, in which the same reference numerals are used to indicate the same or similar components. For the description of the same technical content, refer to the previous embodiments. The following embodiments I will not repeat them here.

FIG. 2 is a schematic diagram of a light emitting device according to another embodiment of the present invention. 1 and FIG. 2 at the same time, the main difference between the light-emitting device 100b of this embodiment and the light-emitting device 100a of FIG. 1 is that the side surface 116b of the light-emitting unit 110b of this embodiment is not perpendicular to the upper surface 112b and the lower surface. Surface 114b. In this embodiment, the surface area of the upper surface 112b of the light emitting unit 100b is greater than the surface area of the lower surface 114b. The angle between the side surface 116b and the lower surface 114b is, for example, between 95 degrees and 150 degrees. In this embodiment, the outline defined by the upper surface 112b, the side surface 116b, and the lower surface 114b of the light-emitting unit 110b has an inverted trapezoidal shape, so the lateral light emission of the light-emitting unit 110b can be reduced, and the high-reflective reflective protection member 120 can be more The forward light emitting efficiency of the light emitting unit 110b is further effectively improved.

FIG. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 3 at the same time. The main difference between the light-emitting device 100c in this embodiment and the light-emitting device 100a in FIG. 1 is that the light-emitting device 100c in this embodiment further includes a first extension electrode 130c and a second Extending the electrode 140c. The first extension electrode 130 c is disposed on the bottom surface 124 of the reflection protection member 120 and is electrically connected to the first electrode pad 113. The second extension electrode 140 c is disposed on the bottom surface 124 of the reflection protection member 120 and is electrically connected to the second electrode pad 115. The first extension electrode 130 c and the second extension electrode 140 c are separated from each other and cover at least a part of the bottom surface 124 of the reflection protection member 120.

As shown in FIG. 3, the arrangement of the first extension electrode 130 c and the second extension electrode 140 c in this embodiment completely overlaps the first electrode pad 113 and the second electrode pad 115, and extends toward the edge of the reflection protection member 120. Of course, in other embodiments not shown, the arrangement of the first extension electrode 130c and the second extension electrode 140c may partially overlap the first electrode pad 113 and the second electrode pad 115, as long as the first extension electrode 130c and the first The arrangement that the two extension electrodes 140c are electrically connected to the first electrode pad 113 and the second electrode pad 115 is the scope to be protected in this embodiment. In addition, the first extension electrode 130 c and the second extension electrode 140 c of this embodiment expose a part of the bottom surface 124 of the reflection protection member 120.

In this embodiment, the materials of the first extension electrode 130 c and the second extension electrode 140 c may be the same or different from the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110 a, respectively. When the materials of the first extension electrode 130c and the second extension electrode 140c are the same as those of the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110a, there may be no gap between the first extension electrode 130c and the first electrode pad 113. The seam connection is an integrally formed structure, and the second extension electrode 140c and the second electrode pad 115 may be seamlessly connected, that is, an integrally formed structure. When the materials of the first and second extension electrodes 130c and 140c are different from the first and second electrode pads 113 and 115 of the light emitting unit 110a, the materials of the first and second extension electrodes 130c and 140c may be, for example, Silver, gold, bismuth, tin, indium, or an alloy of the foregoing.

Since the light-emitting device 100c of this embodiment has a first extension electrode 130c and a second extension electrode 140c electrically connected to the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a, respectively, the light-emitting device 100c can be effectively increased. The contact area of the electrodes facilitates subsequent assembly of the light-emitting device 100c with other external circuits, and can effectively improve alignment accuracy and assembly efficiency. For example, the area of the first extension electrode 130c is larger than the area of the first electrode pad 113, and the area of the second extension electrode 140c is larger than the area of the second electrode pad 115.

FIG. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 3 and FIG. 4 at the same time. The main difference between the light-emitting device 100d in this embodiment and the light-emitting device 100c in FIG. 3 lies in the edge of the first extension electrode 130d and the edge of the second extension electrode 140d in this embodiment. Cut to the edge of the reflective protection member 120.

FIG. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 1 and FIG. 5 at the same time. The main difference between the light-emitting device 100e of this embodiment and the light-emitting device 100a of FIG. 1 is that the light-emitting device 100e of this embodiment further includes an encapsulating adhesive layer 150, wherein the encapsulating adhesive layer 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light type. The encapsulating adhesive layer 150 may also extend to at least a part of the upper surface 122 of the reflective protective element 120, and the edge of the encapsulating adhesive layer 150 may be cut to the edge of the reflective protective element 120. In addition, the encapsulant layer 150 may also be doped with at least one wavelength conversion material. The wavelength conversion material is used to convert the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths, and the material of the wavelength conversion material includes fluorescent light. Materials, phosphorescent materials, dyes, quantum dot materials, and combinations thereof, wherein the particle diameter of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having a high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase light extraction efficiency.

In an embodiment of the present invention, the light emitting unit includes, but is not limited to, ultraviolet, blue, green, yellow, orange, or red light emitting units, and the wavelength conversion material includes, but is not limited to, red, orange, orange, and yellow. , Yellow-green or green wavelength conversion material, or a combination thereof, for converting a part or all of the light emitted by the light-emitting unit. After the wavelength-converted light is mixed with the unconverted light, the light-emitting device emits light with a dominant wavelength in a specific range. The light color includes, but is not limited to, red, orange, orange, and amber. , Yellow, yellow-green, or green, or emit white light with a specific relative color temperature. The range of the relative color temperature is, for example, between 2500K and 7000K, but it is not limited thereto.

FIG. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 6 and FIG. 4 at the same time. The main difference between the light-emitting device 100f in this embodiment and the light-emitting device 100d in FIG. 4 is that the light-emitting device 100f in this embodiment further includes an encapsulating adhesive layer 150, wherein the encapsulating adhesive layer 150 is disposed on the upper surface 112a of the light emitting unit 110a to increase the light extraction rate and improve the light type. The encapsulant layer 150 may also extend to at least a portion of the upper surface 122 of the reflective protection member 120, and the edges of the encapsulant layer 150 may be cut to the edges of the reflective protector 120. In addition, the encapsulant layer 150 may also be doped with At least one wavelength conversion material. The wavelength conversion material is used to convert the wavelength of at least part of the light emitted by the light emitting unit 110a into other wavelengths. The material of the wavelength conversion material includes fluorescent materials, phosphorescent materials, dyes, quantum dot materials, and the like. A combination wherein the particle diameter of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 may also be doped with an oxide having a high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase light extraction efficiency.

It should be noted that, in the embodiments of FIG. 4 and FIG. 6, the edge of the first extension electrode 130 d and the edge of the second extension electrode 140 d are aligned with the edge of the reflection protection member 120. Such a design can not only enlarge the contact of the electrodes Area, and in the manufacturing process, the reflective protection member 120 can simultaneously package a plurality of spaced-apart light emitting units 110a, and then form a patterned metal layer to form a first extension electrode 130d and a second extension electrode 140d, respectively, and then cut to make The edge of the first extension electrode 130d and the edge of the second extension electrode 140d of each light-emitting device 100f are aligned with the edge of the reflective protection member 120, which can effectively save the process time.

FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 7 and FIG. 5 at the same time. The main difference between the light-emitting device 100g in this embodiment and the light-emitting device 100e in FIG. 5 is that the light-emitting device 100g in this embodiment further includes a light-transmitting layer 160, which is disposed in the encapsulant. On the layer 150, the light transmittance of the light transmitting layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic, or silicone. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the light-emitting device 100g. The luminous flux and light extraction rate can also effectively protect the light emitting unit 110a from being attacked by external moisture and oxygen.

FIG. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 8 and FIG. 7 at the same time. The main difference between the light-emitting device 100h in this embodiment and the light-emitting device 100g in FIG. 7 is that the light-transmitting layer 160 'of the light-emitting device 100h in this embodiment is disposed on the light-emitting unit 110a. Between the upper surface 110a and the encapsulating adhesive layer 150.

FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention. Please refer to FIG. 9 and FIG. 6 at the same time. The main difference between the light-emitting device 100i of this embodiment and the light-emitting device 100f of FIG. 6 is that the light-emitting device 100i of this embodiment further includes a light-transmitting layer 160, which is disposed on the encapsulant. On the layer 150, the light transmittance of the light transmitting layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic, or silicone. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the light-emitting device 100i. The luminous flux and light extraction rate can also effectively protect the light emitting unit 110a from being attacked by external moisture and oxygen.

In the following, the light-emitting devices 100a, 100g, 100d, and 100i in FIGS. 1, 7, 4, and 9 will be taken as examples, and matched with 10A to 10D, 11A to 11C, 12A to 12E, and 13A, respectively. 13D, the manufacturing method of the light emitting device of this invention is demonstrated in detail.

10A to 10D are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the present invention. First, referring to FIG. 10A, a plurality of light emitting units 110a are arranged on a substrate 10, wherein each light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, and a side surface 116a connecting the upper surface 112a and the lower surface 114a. And a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114a and separated from each other. The first electrode pad 113 and the second electrode pad 115 of each light-emitting unit 110 a are disposed on the substrate 10. That is, the light emitting surface of the light emitting unit 110 a, that is, the upper surface 112 a is relatively far from the substrate 10. In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic, or other non-conductive materials. The light emitting unit 110a is, for example, a light emitting diode, and the light emitting wavelength (including but not limited to) of the light emitting diode is between 315 nm and 780 nm. The light emitting diode includes, but is not limited to, ultraviolet light, blue light, and green light. , Yellow, orange or red light-emitting diodes.

Next, referring to FIG. 10B, a reflection protection member 120 ′ is formed on the substrate 10, wherein the reflection protection member 120 ′ covers each light-emitting unit 110 a. That is, the reflective protection member 120 'completely and directly covers the upper surface 112a, the lower surface 114a, and the side surface 116a of the light emitting unit 110a, and fills the gap between the first electrode pad 113 and the second electrode pad 115. Here, the reflectivity of the reflective protection element 120 'is at least greater than 90%, that is, the reflective protection element 120' of this embodiment may have a characteristic of high reflectance, wherein the material of the reflective protection element 120 'includes a highly doped material. The polymer material of the reflective particles, such as, but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is not limited to, for example, epoxy resin or silicone resin.

Next, referring to FIG. 10C, a part of the reflection protection member 120 'is removed to form a reflection protection member 120, wherein the reflection protection member 120 exposes at least a part of the upper surface 112a of each light emitting unit 110a. At this time, the upper surface 112 a of each light emitting unit 110 a may be aligned with the top surface 122 of the reflection protection member 120. Here, a method of removing the partial reflection protection member 120 'includes, for example, a grinding method or a polishing method.

Then, referring to FIG. 10D, a cutting process is performed to cut the reflective protection member 120 along the cutting line L to form a plurality of light-emitting devices 100a separated from each other. Each light-emitting device 100a has at least one light-emitting unit 110a and a reflection. The protective member 120 and the reflective protective member 120 cover the side surface 116a of the light emitting unit 110a and expose at least a part of the upper surface 112a thereof.

Finally, referring to FIG. 10D again, the substrate 10 is removed to expose the bottom surface 124 of the reflective protection member 120 of each light emitting device 100a, and to expose at least a portion of the first bottom surface 113a of the first electrode pad 113 of each light emitting device 100a. And at least a portion of the second bottom surface 115a of the second electrode pad 115.

11A to 11C are schematic cross-sectional views illustrating partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. The main difference between the method for manufacturing the light-emitting device of this embodiment and the method for manufacturing the light-emitting device in FIG. 10A to FIG. 10D is that between the steps of FIG. 10C and FIG. 10D, that is, removing a part of the reflection protection member After 120 ', and before the cutting process, please refer to FIG. 11A to form an encapsulating adhesive layer 150 on the light emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light type. Here, the encapsulating adhesive layer 150 covers the upper surface 112a of the light emitting unit 110a and the top surface 122 of the reflection protection member 120, and the encapsulating adhesive layer 150 may be doped with at least one wavelength conversion material. For a description of the wavelength conversion material, please refer to the foregoing embodiment. In addition, the encapsulant layer 150 may also be doped with an oxide having a high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase light extraction efficiency.

Next, referring to FIG. 11B, a light-transmitting layer 160 is formed on the light-emitting unit 110 a and the reflection protection member 120. The light-transmitting layer 160 is located on the encapsulating adhesive layer 150 and covers the encapsulating adhesive layer 150. For example, the light transmittance of the light transmitting layer 160 is greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic, or silicone. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the subsequent formation. The luminous flux and light extraction rate of the light-sealing structure 100g of the light-emitting unit can also effectively protect the light-emitting unit 110a from being attacked by external moisture and oxygen.

After that, referring to FIG. 11C, a cutting process is performed to cut the light-transmitting layer 160, the encapsulating adhesive layer 150, and the reflection protection member 120 along the cutting line L to form a plurality of light-emitting devices 100 g separated from each other. Finally, referring to FIG. 11C again, the substrate 10 is removed to expose the bottom surface 124 of the reflection protection member 120 of each light emitting device 100g, wherein the bottom surface 124 of the reflection protection member 120 of each light emitting device 100 exposes the first electrode pad 113 At least part of the first bottom surface 113a and at least part of the second bottom surface 115a of the second electrode pad 115. In another embodiment of the present invention, the substrate 10 may be removed before performing a cutting process.

12A to 12E are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to another embodiment of the present invention. Please refer to FIG. 12A first. The main difference between the manufacturing method of the light-emitting device of this embodiment and the manufacturing method of the light-emitting device in FIGS. 10A to 10D is as follows: Please refer to FIG. 12A. The light-emitting unit 110a of this embodiment is not The substrate 10 is contacted by the first electrode pad 113 and the second electrode pad 115, and the substrate 10 is contacted by the upper surface 112a thereof.

Next, referring to FIG. 12B, a reflection protection member 120 'is formed on the substrate, wherein the reflection protection member covers each light-emitting unit 110a.

Next, referring to FIG. 12C, a part of the reflection protection member 120 'is removed to form the reflection protection member 120, wherein the reflection protection member 120 exposes at least a portion of the first bottom surface 113a and the first of the first electrode pad 113 of each light emitting unit 110a. At least part of the second bottom surface 115a of the two electrode pads 115.

Next, referring to FIG. 12D, a patterned metal layer is formed as the extended electrode layer E, which is located on the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115 of each light-emitting unit 110a. Here, the method of forming the patterned metal layer is, for example, a vapor deposition method, a sputtering method, a plating method or an electroless plating method, and a photomask etching method.

Next, referring to FIG. 12E, a cutting process is performed to cut the extended electrode layer E and the reflective protection member 120 along the cutting line to form a plurality of light emitting devices 100d separated from each other. Each light-emitting device 100d has at least one light-emitting unit 110a, a reflective protection member 120 covering at least a side surface 116a of the light-emitting unit 110a, a first extension electrode 130d directly contacting the first electrode pad 113, and a second electrode pad 115 directly. The second extension electrode 140d. The first extension electrode 130d and the second extension electrode 140d are separated from each other and expose at least a portion of the bottom surface 124 of the reflection protection member 120. At this time, the area of the first extended electrode 130d may be larger than that of the first electrode pad 113, and the area of the second extended electrode 140d may be larger than that of the second electrode pad 115. The edge of the first extension electrode 130 d and the edge of the second extension electrode 140 d are aligned with the edge of the reflection protection member 120.

Finally, referring to FIG. 12E again, the substrate 10 is removed to expose the top surface 122 of the reflective protection member 120 and the upper surface 112a of the light emitting unit 110a of each light emitting device 100d. The top surface 122 is aligned with the upper surface 112a of the light emitting unit 110a. In another embodiment of the present invention, the substrate 10 may be removed before performing a cutting process.

13A to 13D are schematic cross-sectional views illustrating partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. The main difference between the method for manufacturing the light-emitting device of this embodiment and the method for manufacturing the light-emitting device in FIGS. 12A to 12E is that between the steps of FIG. 12D and FIG. 12E, that is, after the extended electrode layer E is formed Before performing the dicing process, please refer to FIG. 13A, provide another substrate 20 and set it on the extended electrode layer E. Here, the material of the other substrate 20 is, for example, stainless steel, ceramic, or other non-conductive materials. 13A, after providing another substrate 20, the substrate 10 is removed to expose the top surface 122 of the reflective protection member 120 and the upper surface 112a of the light emitting unit 110a, wherein the upper surface 112a of each light emitting unit 110a Cut to the top surface 122 of the reflection protection member 120.

Next, please refer to FIG. 13B, forming an encapsulating adhesive layer 150 on the light-emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light type. Here, the encapsulating adhesive layer 150 covers the upper surface 112a of the light emitting unit 110a and the top surface 122 of the reflection protection member 120, and the encapsulating adhesive layer 150 may be doped with at least one wavelength conversion material. For a description of the wavelength conversion material, please refer to the foregoing embodiment. In addition, the encapsulant layer 150 may also be doped with an oxide having a high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase light extraction efficiency.

Next, referring to FIG. 13C, a light-transmitting layer 160 is formed on the light-emitting unit 110 a and the reflective protection member 120. The light-transmitting layer 160 is located on the encapsulating adhesive layer 150 and covers the encapsulating adhesive layer 150. For example, the light transmittance of the light transmitting layer 160 is greater than 50%. Here, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic, or silicone. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the subsequent light-emitting unit seals. The luminous flux and light extraction rate of the light structure 100i can also effectively protect the light emitting unit 110a from being attacked by external moisture and oxygen.

After that, referring to FIG. 13D, a cutting process is performed to cut the light-transmitting layer 160, the encapsulating adhesive layer 150, the reflection protection member 120, and the extension electrode layer E along the cutting line L to form a plurality of light-emitting devices 100 i separated from each other. Finally, referring to FIG. 13D again, the other substrate 20 is removed to expose the first extension electrode 130d and the second extension electrode 140d of each light emitting device 100i. In another embodiment of the present invention, the substrate 20 may be removed before performing a cutting process.

14A to 14E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. Referring to FIG. 14A, a wavelength conversion adhesive layer 170 is provided. The wavelength conversion adhesive layer 170 includes a low-concentration fluorescent adhesive layer 174 and a high-concentration fluorescent adhesive layer 172 on the low-concentration fluorescent adhesive layer 174. Here, the step of forming the wavelength conversion gel layer 170 is, for example, first mixing the dopant with the colloid (that is, uniformly mixing the liquid or molten colloid with the wavelength conversion material. The wavelength conversion material is, for example, a fluorescent powder, but not the same. To limit), the wavelength conversion adhesive layer 170 is formed, and then the wavelength conversion adhesive layer 170 is left to stand for a period of time, such as after 24 hours of sedimentation, a high-concentration fluorescent adhesive layer 172 and a low-concentration fluorescent adhesive layer are formed. 174. That is, the wavelength conversion layer 170 of this embodiment is described by using two adhesive layers as an example. Of course, in other embodiments, please refer to FIG. 14A ', and provide a wavelength conversion adhesive layer 170', wherein the wavelength conversion adhesive layer 170 'is a single adhesive layer, which still belongs to the scope of the present invention.

Next, referring to FIG. 14B, a plurality of spaced-apart light emitting units 110c are disposed on the wavelength conversion adhesive layer 170. Each light emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c and A side surface 116c of the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114c and separated from each other, and the upper surface 112c of the light-emitting unit 110c is located in the high-concentration fluorescent layer 170 On the glue layer 172. Next, a plurality of light-transmissive adhesive layers 150c including light-transmissive colloids are formed on the wavelength conversion adhesive layer 170 and extend to the side surface 116c of the light-emitting unit 110c. The light-transmissive adhesive layer 150c does not completely cover the light-emitting unit 110c. 14B, as shown in FIG. 14B, the transparent adhesive layer 150c has a slope of curvature, and the closer to the upper surface 112c of the light-emitting unit 110c, that is, closer to the wavelength conversion adhesive layer 170, the thicker the transparent adhesive layer 150c is. thick. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

It should be noted that, in other embodiments, please refer to FIG. 14B ′. Before the light-emitting units 110c arranged at intervals are arranged on the wavelength conversion adhesive layer 170, an uncured and light-transmitting colloid material is formed. The adhesive layer 150 c ′ is on the wavelength conversion adhesive layer 170. After the light-emitting units 110c are arranged on the wavelength conversion adhesive layer 170 at intervals, the light-transmissive adhesive layer 150c 'can be extended between the light-emitting unit 110c and the high-concentration fluorescent adhesive layer 172.

Next, please refer to FIG. 14B and FIG. 14C at the same time. After the light-transmitting layer 150c ′ is cured, a first cutting process is performed to cut the wavelength conversion adhesive layer 170 to form a plurality of cells 101 separated from each other. The at least one light-emitting unit 110c and the wavelength-converting adhesive layer 170 disposed on the upper surface 112c of the light-emitting unit 110c are respectively provided, and both side edges 171 of the wavelength-converting adhesive layer 170 of each unit 101 extend to the side surface 116c of the light-emitting unit 110c outer. Next, please refer to FIG. 14C again, and arrange the spaced-apart units 101 on a substrate 10. In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic, or other non-conductive materials, which is not limited herein.

After that, referring to FIG. 14D, a reflection protection member 120 c is formed on the substrate 10 and covers the side surface 116 c of the light emitting unit 110 c of each unit 101 and the edge 171 of the wavelength conversion adhesive layer 170. Here, the formation manner of the reflection protection member 120c is, for example, a through-dispensing method, in which the reflection protection member 120c directly covers the light-transmitting adhesive layer 150c and extends along the light-transmitting adhesive layer 150c to cover the edge of the wavelength conversion adhesive layer 170. 171. The orthographic projection of the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110 c on the substrate 10 does not overlap the orthographic projection of the reflection protection member 120 c on the substrate 10. Here, the reflection protection member 120c is, for example, a white glue layer.

Finally, referring to FIG. 14D and FIG. 14E at the same time, a second cutting process is performed to cut the reflective protection member 120c, and the substrate 10 is removed to form a plurality of light emitting devices 100j separated from each other. Each light-emitting device 100j has at least one light-emitting unit 101 and a reflective protection member 120c covering the side surface 116c of the light-emitting unit 110c and the edge 171 of the wavelength conversion adhesive layer 170. After the substrate 10 is removed, a top surface 122c of the reflection protection member 120c and a top surface 173 of the wavelength conversion adhesive layer 170 of each light-emitting device 100j are exposed. In another embodiment of the present invention, the substrate 10 may be removed before performing a cutting process. So far, the production of the light emitting device 100j has been completed.

Structurally, please refer to FIG. 14E again. The light-emitting device 100j of this embodiment includes a light-emitting unit 110c, a reflection protection member 120c, a light-transmissive adhesive layer 150c, and a wavelength conversion adhesive layer 170. The wavelength conversion adhesive layer 170 is disposed on the upper surface 112c of the light emitting unit 110c. The wavelength conversion adhesive layer 170 includes a low concentration fluorescent adhesive layer 174 and a high concentration fluorescent adhesive layer 172, and the high concentration fluorescent adhesive layer 172 is located at a low concentration. Between the fluorescent adhesive layer 174 and the light emitting unit 110c, the edge 171 of the wavelength conversion adhesive layer 170 extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent adhesive layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor from penetrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light-emitting unit 110c and the reflection protection member 120c, and is used to fix the position of the light-emitting unit 110c. The reflection protection member 120c of this embodiment is further covered on the edge 171 of the wavelength conversion adhesive layer 170 along the light-transmissive adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c. Therefore, the light-emitting device 100j of this embodiment does not need to be used The conventional supporting bracket supports and fixes the light emitting unit 110c, which can effectively reduce the package thickness and manufacturing cost. At the same time, it is also possible to effectively improve the forward light emitting efficiency of the light emitting unit 110c through the reflection protection member 120c having a high reflectance. Here, the top surface 122 c of the reflection protection member 120 c is embodied as being aligned with the top surface 173 of the wavelength conversion adhesive layer 170.

15A to 15E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. Please refer to FIG. 15A first to provide a first release film 30, and then provide a wavelength conversion adhesive layer 170a on the first release film 30. The wavelength conversion adhesive layer 170a may be a single-layer adhesive layer or a multi-layer adhesive layer. In this embodiment, the wavelength conversion adhesive layer 170a includes a low-concentration fluorescent adhesive layer 174a and a high-concentration fluorescent adhesive layer 172a on the low-concentration fluorescent adhesive layer 174a. Here, the step of forming the wavelength conversion gel layer 170a is, for example, first forming the wavelength conversion gel layer 170a by mixing dopants and colloids, and then leaving the wavelength conversion gel layer 170a to stand for a period of time, such as 24 hours, forming a separate low The high-concentration fluorescent adhesive layer 172a and the high-concentration fluorescent adhesive layer 174a. Here, the first release film 30 is, for example, a double-sided adhesive film.

Next, referring to FIG. 15A again, a plurality of spaced light emitting units 110c are disposed on the wavelength conversion adhesive layer 170A. Each light emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c. A first electrode pad 113 and a second electrode pad 115 are separated from the side surface 116c of the lower surface 114c and the lower surface 114c, and the upper surface 112c of the light-emitting unit 110c is located in the high-concentration fluorescent layer 170a. On the photoresist layer 172a. Here, two adjacent light emitting units 110c have a pitch G, and the pitch G is, for example, 700 micrometers. Next, a plurality of light-transmissive adhesive layers 150c are formed on the side surface 116c of the light-emitting unit 110c. The light-transmissive adhesive layer 150c does not completely cover the side surface 116c of the light-emitting unit 110c. As shown in FIG. 15B, The adhesive layer 150c has a slope of curvature, and the closer to the upper surface 112c of the light emitting unit 110c, the thicker the thickness of the transparent adhesive layer 150c. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

15B, a first cutting process is performed to cut the high-concentration fluorescent adhesive layer 172a and a portion of the low-concentration fluorescent adhesive layer 174a to form a plurality of trenches C. As shown in FIG. 15B, the first cutting procedure does not completely cut off the wavelength conversion adhesive layer 170a, but only cuts the high-concentration fluorescent adhesive layer 172a and cuts a portion of the low-concentration fluorescent adhesive layer 174a. Here, the width W of the trench C is, for example, 400 micrometers, and the depth D of the trench C is, for example, half of the thickness T of the wavelength conversion adhesive layer 170a. The thickness T of the wavelength conversion adhesive layer 170a is, for example, 140 micrometers, and the depth D of the trench C is, for example, 70 micrometers. At this time, the position of the trench C and the position of the encapsulating adhesive layer 150c do not interfere with each other.

15C, a reflective protection member 120d is formed on the low-concentration fluorescent adhesive layer 174a and covers the side surface 116c of the light-emitting unit 110c. The reflection protection member 120d fills the trench C and exposes the light-emitting unit 110c. The first electrode pad 113 and the second electrode pad 115. Here, the reflection protection member 120d is, for example, a white glue layer.

Finally, referring to FIGS. 15D and 15E at the same time, the first release layer 30 is removed, and a second release layer 40 is provided so that the first electrode pad 113 and the second electrode pad 115 of the light emitting unit 110c contact the second release layer. Type film 40. Here, the second release layer 40 is, for example, a UV adhesive or a double-sided adhesive. Next, a second cutting process is performed to cut the reflective protection member 120d and the low-concentration fluorescent adhesive layer 174a along the extending direction of the trench C (that is, the extending direction of the cutting line L in FIG. 15D) to form a plurality of Light emitting devices 100k separated from each other. Each light-emitting device 100k has at least one light-emitting unit 110c, a wavelength conversion adhesive layer 170a disposed on the upper surface 112c of the light-emitting unit 110c, and a reflection protection member 120d covering the side surface 116c of the light-emitting unit 110c. In this embodiment, the wavelength conversion adhesive layer 170a includes a high-concentration fluorescent adhesive layer 172a and a low-concentration fluorescent adhesive layer 174a. Here, the edge 171a of the low-concentration fluorescent adhesive layer 174a of the wavelength-converted adhesive layer 170a is aligned with The edge 121 of the reflection protection member 120d, and the reflection protection member 120d further covers the edge 173a of the high-concentration fluorescent adhesive layer 172a. The second release layer 40 is removed to complete the fabrication of the light emitting device 100k.

Structurally, please refer to FIG. 15E again. The light-emitting device 100k of this embodiment includes a light-emitting unit 110c, a reflection protection member 120d, a light-transmissive adhesive layer 150c, and a wavelength conversion adhesive layer 170a. The wavelength conversion adhesive layer 170a is disposed on the upper surface 112c of the light emitting unit 110c. The wavelength conversion adhesive layer 170a includes a low concentration fluorescent adhesive layer 174a and a high concentration fluorescent adhesive layer 172a, and the high concentration fluorescent adhesive layer 172a is located at a low concentration. Between the fluorescent adhesive layer 174a and the light emitting unit 110c, the edge 171a of the wavelength conversion adhesive layer 170a extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent adhesive layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor from penetrating. The light-transmitting adhesive layer 150c is disposed between the side surface 116c of the light-emitting unit 110c and the reflection protection member 120d, and is used to fix the position of the light-emitting unit 110c. The reflection protection member 120d of this embodiment is further covered on both sides edges 173a of the high-concentration fluorescent adhesive layer 172a of the wavelength conversion adhesive layer 170a along the transparent adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c. The light emitting device 100k of this embodiment does not need to use a conventional supporting bracket to support and fix the light emitting unit 110c, but can effectively reduce the package thickness and manufacturing cost. At the same time, it is also possible to effectively improve the forward light emitting efficiency of the light emitting unit 110c through the reflective protection member 120d having a high reflectance. In addition, the low-concentration fluorescent adhesive layer 174a of the wavelength conversion adhesive layer 170a of this embodiment covers a top surface 122d of the reflection protection member 120d. That is, the edge 173a of the high-concentration fluorescent adhesive layer 172a and the edge 171a of the low-concentration fluorescent adhesive layer 174a of the wavelength conversion adhesive layer 170a of this embodiment are not aligned.

In other embodiments, please refer to FIG. 16A. The light-emitting device 100m in this embodiment is similar to the light-emitting device 100j in FIG. 14E. The difference is that the reflection protection member 120m of this embodiment completely fills the first electrode pad 113 and The gap S between the second electrode pads 114 completely covers a first side surface 113b of the first electrode pad 113 and a second side surface 115b of the second electrode pad 115, and a bottom surface 124m of the reflection protection member 120m is aligned. On the first bottom surface 113 a of the first electrode pad 113 and the second bottom surface 115 a of the second electrode pad 115. In this way, it is possible to avoid light leakage from the bottom of the light emitting device 100m. In addition, the reflection protection member 120m is completely covered on both sides of the wavelength conversion adhesive layer 170a. In addition, since the reflective protective member 120m has good covering properties and good structural strength, the light emitting device 100m of this embodiment does not need to use a conventional supporting bracket to support and fix the light emitting unit 110c, which can effectively reduce Package thickness and manufacturing cost.

Alternatively, please refer to FIG. 16B. The light-emitting device 100n in this embodiment is similar to the light-emitting device 100k in FIG. 16A. The difference is that the reflection protection member 120n of this embodiment is filled in the first electrode pad 113 and the second electrode pad. The gap S between 114 is not completely filled, and the reflection protection member 120n covers only part of the first side surface 113b of the first electrode pad 113 and part of the second side surface 115b of the second electrode pad 115. In other words, there is a height difference H between a bottom surface 124n of the reflection protection member 120n and the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115. Alternatively, please refer to FIG. 16C. The light-emitting device 100p in this embodiment is similar to the light-emitting device 100n in FIG. 16B. The difference is that the first electrode pad 113 'and the second electrode pad 115' in this embodiment are embodied as The multi-layer metal layer may include a first metal layer M1 and a second metal layer M2, but is not limited thereto. The reflection protection member 120p completely covers the side surfaces of the first metal layer M1 of the first electrode pad 113 'and the second electrode pad 115, but does not completely cover the second metal of the first electrode pad 113' and the second electrode pad 115 '. The side surface of the layer M2. In short, the first electrode pads 113 and 113 'and the second electrode pads 115 and 115' of the light-emitting units 110c and 110c 'of the light-emitting devices 100m, 100n, and 100p may be a single metal layer or a plurality of metal layers. Be restricted.

17A to 17E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the present invention. Regarding the manufacturing method of the light-emitting device of this embodiment, first, referring to FIG. 17A, a wavelength conversion adhesive layer 210 is provided. The wavelength conversion adhesive layer 210 may be a single-layer adhesive layer or a multi-layer adhesive layer. The wavelength conversion in this embodiment is The adhesive layer 210 includes a low concentration fluorescent adhesive layer 212 and a high concentration fluorescent adhesive layer 214 on the low concentration fluorescent adhesive layer 212. Here, the step of forming the wavelength conversion adhesive layer 210 is, for example, firstly mixing the wavelength conversion adhesive material layer formed by mixing the fluorescent powder (not shown) and the silicon gel (not shown) by mixing the dopant with the colloid. (Not shown) Lay on a release film (not shown), and then leave the wavelength conversion adhesive material layer still for a period of time, such as 24 hours, due to the difference in the density of the phosphor and the silicone, a low level of separation is formed. The wavelength conversion adhesive layer 210 of the high-concentration fluorescent adhesive layer 212 and a high-concentration fluorescent adhesive layer 214, wherein the high-concentration fluorescent adhesive layer 214 will be deposited under the low-concentration fluorescent adhesive layer 212, and the high-concentration fluorescent adhesive layer 214 is, for example, yellow, and the low-concentration fluorescent adhesive layer 212 is, for example, transparent. The thickness of the low-concentration fluorescent adhesive layer 212 is preferably greater than the thickness of the high-concentration fluorescent adhesive layer 214. In one embodiment, the thickness ratio may Between 1 and 200, but not limited to this.

Next, referring to FIG. 17A again, a double-sided adhesive film 10a is provided. The low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 is disposed on the double-sided adhesive film 10a to fix the wavelength conversion adhesive through the double-sided adhesive film 10a. Location of layer 210. Next, a first cutting process is performed to cut from the high-concentration fluorescent adhesive layer 214 to a portion of the low-concentration fluorescent adhesive layer 212 to form a plurality of trenches C1. Here, the depth of each trench C1 is at least half of the thickness of the wavelength conversion adhesive layer 210. For example, the thickness of the wavelength conversion adhesive layer 210 is 240 micrometers, and the depth of the trench C1 is, for example, 200 micrometers. At this time, the trench C1 can distinguish the low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 into a flat plate portion 212a and a protruding portion 212b on the flat plate portion 212a, and the high-concentration fluorescent adhesive layer 214 is located on the protrusion. Section 212b.

Next, referring to FIG. 17B, a plurality of spaced light-emitting units 220 are disposed on the wavelength conversion adhesive layer 210. Each light-emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, and a connection between the upper surface 222 and A side surface 226 of the lower surface 224 and a first electrode pad 223 and a second electrode pad 225 located on the lower surface 224 and separated from each other. The upper surface 222 of the light emitting unit 220 is located on the high-concentration fluorescent adhesive layer 214 of the wavelength conversion adhesive layer 210 to increase the light extraction rate and improve the light type. The trench C1 divides the light emitting unit 220 into multiple units A. In this embodiment, each unit A includes at least two light emitting units 220 (two light emitting units 220 are schematically shown in FIG. 17B). Each light-emitting unit 220 is, for example, a light-emitting diode chip having a wavelength between 315 nm and 780 nm. The light-emitting diode chip includes, but is not limited to, ultraviolet light, blue light, green light, yellow light, and orange. Light or red light emitting diode wafer.

Next, referring to FIG. 17B again, a light-transmissive adhesive layer 230 a is formed on the wavelength conversion adhesive layer 210 and is extended and disposed on the side surface 226 of the light-emitting unit 220. As shown in FIG. 17B, the transparent adhesive layer 230a is gradually thickened from the lower surface 224 to the upper surface 222 of each light emitting unit 220, and the transparent adhesive layer 230a has a concave surface 232 with respect to the side surface 226 of the light emitting unit 220 , But not limited to this. Here, the purpose of the transparent adhesive layer 230a is to fix the position of the light-emitting unit 220. Since the transparent adhesive layer 230a is a light-transmitting material and the refractive index is greater than 1, the light extraction effect on the side of the wafer can also be increased.

Next, referring to FIG. 17C, a reflection protection member 240 is formed between the light emitting units 220 and fills the trench C1. The reflection protection member 240 is formed on the wavelength conversion adhesive layer 210 and covers each unit A and fills the trench. Slot C1. The reflection protection member 240 exposes the lower surface 224, the first electrode pad 223, and the second electrode pad 225 of each light emitting unit 220. Here, the reflectivity of the reflection protection member 240 is at least greater than 90%, and the reflection protection member 240 is, for example, a white glue layer. The formation of the reflection protection member 240 is, for example, a method of transmitting glue, wherein the reflection protection member 240 directly covers the transparent adhesive layer 230a and extends along the transparent adhesive layer 230a to cover the edge of the high-concentration fluorescent adhesive layer 214 and fill it. Full trench C1. At this time, the orthographic projection of the first electrode pad 223 and the second electrode pad 225 on the double-sided adhesive film 10 a of the light-emitting unit 220 does not overlap with the orthographic projection of the reflection protection member 240 on the double-sided adhesive film 10 a.

Next, referring to FIG. 17C again, a second cutting process is performed to penetrate the low-concentration fluorescent adhesive layer 212 from the reflective protection member 240 along the trench C1 to form a plurality of light-emitting devices 200 a separated from each other. At this time, as shown in FIG. 17C, the wavelength conversion adhesive layer 210 in contact with the two light-emitting units 220 in each unit A is continuous, meaning that the light-emitting units 220 have the same light-emitting surface. Light can be transmitted through the transparent low-concentration fluorescent adhesive layer 212 for light guiding, so that the light-emitting device 200a of this embodiment has better light-emitting uniformity.

After that, please refer to FIG. 17C and FIG. 17D at the same time. After the second cutting process, a film turning process is performed. First, a UV adhesive film 20a is first provided on the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220 to fix the relative positions of the light emitting devices 200a. Next, the double-sided adhesive film 10 a is removed to expose the low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210. Finally, referring to FIG. 17E, the UV adhesive film 20 a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220. So far, the production of the light emitting device 200a has been completed. It should be noted that, for convenience of description, FIG. 17E schematically illustrates only one light-emitting device 200a.

Structurally, please refer to FIG. 17E again. The light-emitting device 200a includes a plurality of light-emitting units 220 (two light-emitting units 220 are schematically shown in FIG. 17E), a wavelength conversion adhesive layer 210, and a reflection protection member 240. Each light-emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, a side surface 226 connecting the upper surface 222 and the lower surface 224, and a first electrode pad 223 and a first electrode pad 223 located on the lower surface 224 and separated from each other. Two electrode pads 225. The wavelength conversion adhesive layer 210 is disposed on the upper surface 222 of the light-emitting unit 220. The wavelength conversion adhesive layer 210 includes a low-concentration fluorescent adhesive layer 212 and a high-concentration fluorescent adhesive layer 214. The low-concentration fluorescent adhesive layer 212 has a flat plate portion 212a and a protruding portion 212b located on the flat plate portion 212a. The high-concentration fluorescent adhesive layer 214 is disposed between the upper surface 222 and the protruding portion 212 b. The high-concentration fluorescent adhesive layer 214 covers the protruding portion 212 b and contacts the upper surface 222 of the light emitting unit 220. The light emitting units 220 are arranged at intervals and a part of the wavelength conversion adhesive layer 210 is exposed. The reflection protection member 240 covers the side surface 226 of each light emitting unit 220 and covers the wavelength conversion adhesive layer 210 exposed by the light emitting unit 220. The reflection protection member 240 exposes the lower surface 224, the first electrode pad 223, and the second electrode pad 225 of each light emitting unit 220. The edge of the reflection protection member 240 is cut to the edge of the flat plate portion 212 a of the low-concentration fluorescent adhesive layer 212.

Since the light-emitting units 220 in the light-emitting device 200a of this embodiment are in contact with only one wavelength conversion adhesive layer 210, it means that the light-emitting units 220 have the same light-emitting surface, and the edges of the low-concentration fluorescent adhesive layer 212 and the reflection protection member The edges of 240 are aligned. Therefore, the light emitted by the light-emitting unit 220 is guided through the low-concentration fluorescent adhesive layer 212, so that the light-emitting device 200a of this embodiment can have a larger light-emitting area and better light-emitting uniformity. In addition, the reflection protection member 240 covers the side surface 226 of the light emitting unit 220, and the reflection protection member 240 exposes the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220. Therefore, the light-emitting device 200a of this embodiment does not need to use a conventional supporting bracket to support and fix the light-emitting unit 220, which can effectively reduce the package thickness and manufacturing cost, and can also effectively improve the forward light-emitting efficiency of the light-emitting unit 220.

It is worth mentioning that this embodiment does not limit the structure of the transparent adhesive layer 230a, although the transparent adhesive layer 230a shown in FIG. 17E is embodied as having a concave surface with respect to the side surface 226 of the light emitting unit 220 232. In other words, the reflective protection member 240 further includes a reflective surface 242 that is in contact with the light emitting unit 220, and the reflective surface 242 is embodied as a curved surface. However, in other embodiments, please refer to FIG. 18A. The light-emitting device 200b in this embodiment is similar to the light-emitting device 200a in FIG. 17E, with the difference being that the transparent adhesive layer 230b is opposite to the side surface of each light-emitting unit 220. 226 has a convex surface 234, which can effectively increase the lateral light output of the light-emitting unit 220, and can also increase the light-emitting area of the light-emitting device 200b by cooperating with the configuration of the wavelength conversion adhesive layer 210. In other words, the reflection surface 242a of the reflection protection member 240a is embodied as a curved surface. Alternatively, please refer to FIG. 18B. The light-emitting device 200c of this embodiment is similar to the light-emitting device 200a in FIG. 17E, except that the light-transmitting adhesive layer 230c has an inclined surface with respect to the side surface 226 of each light-emitting unit 220. 236. In other words, the reflection surface 242b of the reflection protection member 240b is embodied as a flat surface.

It must be noted here that the following embodiments follow the component numbers and parts of the previous embodiments, in which the same reference numerals are used to indicate the same or similar components. For the description of the same technical content, refer to the previous embodiments. The following embodiments I will not repeat them here.

19A to 19E are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to another embodiment of the present invention. The main difference between the manufacturing method of the light-emitting device 200d in this embodiment and the manufacturing method of the light-emitting device 200a in FIG. 17A to FIG. 17E is as follows: Please refer to FIG. 19A. The high-concentration fluorescent adhesive layer 214 'is cut to a portion of the second trench C2' of the low-concentration fluorescent adhesive layer 212 '. As shown in FIG. 19A, the positions of the trenches C1 'and the second trenches C2' are staggered. The depth of each trench C1 'is at least half the thickness of the wavelength conversion adhesive layer 210', and each second The depth of the trench C2 'is the same as the depth of each trench C1'. For example, the thickness of the wavelength conversion adhesive layer 210 'is 240 microns, and the depth of the trench C1' and the depth of the second trench C2 'are, for example, 200 microns, but not limited thereto. At this time, the flat portion 212a 'of the low-concentration fluorescent adhesive layer 212' has a thickness T. Preferably, the thickness T is, for example, between 20 micrometers and 50 micrometers. The second trench C2 'distinguishes the protruding portions of the low-concentration fluorescent adhesive layer 212' in the wavelength conversion adhesive layer 210 'into two protruding sub-portions 212b', and the high-concentration fluorescent adhesive layer 214 'is located on these protruding sub-portions 212b. 'on.

Next, referring to FIG. 19B, the light emitting units 220 arranged at intervals are disposed on the wavelength conversion adhesive layer 210 ′. The second trench C2 ′ is located between the two light emitting units 220 in each light emitting unit A, and emits light. The units 220 are respectively disposed on the protruding sub-portions 212b ', and the upper surface 222 of the light-emitting unit 220 directly contacts the high-concentration fluorescent adhesive layer 214'. Preferably, the ratio of the length of each protruding sub-portion 212b 'to the length of the corresponding light-emitting unit 220 is greater than 1 and less than 1.35, that is, the edge of the protruding sub-portion 212b' of the low-concentration fluorescent adhesive layer 212 '. Outside the edge of the light-emitting unit 220 and the edge of the high-concentration fluorescent adhesive layer 214 ′ extends beyond the edge of the light-emitting unit 220, the light-emitting area of the light-emitting unit 220 can be effectively increased. Next, a light-transmissive adhesive layer 230a is formed on the side surface 226 of the light-emitting unit 220, wherein the light-transmissive adhesive layer 226 is only disposed on the side surface 226 of the light-emitting unit 220 and extends to the high-concentration fluorescent layer 210 '. The photoresist layer 214 'is not extended on the low-concentration phosphor layer 212'.

Next, with the steps of FIG. 17C, FIG. 17D and FIG. 17E above, please refer to FIG. 19C first, that is, a reflection protection member 240 is formed on the wavelength conversion adhesive layer 210 'and covers each unit A and fills the trenches C1' and The second trench C2 'is then subjected to a second cutting process to penetrate the low-concentration fluorescent adhesive layer 212' from the reflective protection member 240 along the trench C1 'to form a plurality of light-emitting devices 200d separated from each other. Next, please refer to FIG. 19C and FIG. 19D at the same time. After the second cutting process, a film turning process is performed. First, a UV adhesive film 20a is first provided on the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220 to fix the relative positions of the light-emitting devices 200a. Next, the double-sided adhesive film 10a is removed to expose the low-concentration fluorescent adhesive layer 212 'of the wavelength conversion adhesive layer 210'. Finally, referring to FIG. 19E, the UV adhesive film 20 a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light emitting unit 220. So far, the production of the light emitting device 200d has been completed. It should be noted that, for convenience of description, FIG. 19E only schematically illustrates one light emitting device 200d.

Please refer to FIG. 19E, FIG. 20A and FIG. 20B at the same time. It should be noted that FIG. 19E is a schematic cross-sectional view taken along line Y-Y in FIG. 20A. The light-emitting device 200d in this embodiment is similar to the light-emitting device 200a in FIG. 17E, except that the wavelength conversion adhesive layer 210 'exposed between the two light-emitting units 220 further has a second groove C2', wherein The two trenches C2 'extend from the high-concentration fluorescent adhesive layer 214' to a portion of the low-concentration fluorescent adhesive layer 212 '. That is, the two light emitting units 220 are disposed on a continuous wavelength conversion adhesive layer 210 ′. Therefore, the light emitting units 220 have the same light emitting surface, and the edge of the low-concentration fluorescent adhesive layer 212 ′ and the reflection protection member 240 Cut the edges evenly. Therefore, the light emitted by the light-emitting unit 220 is guided through the low-concentration fluorescent adhesive layer 212 ', so that the light-emitting device 200d of this embodiment can have a larger light-emitting area and better light-emitting uniformity.

In particular, when the first cutting procedure is performed, the cutting depths in the direction of the line X-X and the direction of the line Y-Y in FIG. 20A are substantially the same. In other words, please refer to FIG. 20B. In the cross-sectional view along the line XX, the flat portion 212a 'of the low-concentration fluorescent adhesive layer 212' has a thickness T. Please refer to FIG. 19E. The flat plate portion 212a 'of the concentrated phosphor layer 212' also has a thickness T. Preferably, the thickness T is, for example, between 20 micrometers and 50 micrometers.

Of course, in other embodiments, during the first cutting process, the flat portions 212a 'of the low-concentration fluorescent adhesive layer 212' may have different thicknesses when cutting in different directions. 21A is a schematic perspective view of a light emitting device according to another embodiment of the present invention. 21B and 21C are schematic cross-sectional views taken along lines X'-X 'and Y'-Y' of Fig. 21A, respectively. Please refer to FIG. 21A, FIG. 21B, and FIG. 21C at the same time. When the first cutting process is performed, the depth of the cut in the direction of the line X'-X 'and the direction of the line Y'-Y' in FIG. 21A is different, resulting in a wavelength The conversion adhesive layer 210 'further includes a first exposed side portion and a second exposed side portion which are not covered by the reflection protection member 240, the first exposed side portion and the second exposed side portion are not parallel, and the wavelength conversion adhesive layer The thickness of 210 ′ at the first exposed side is different from the thickness of the wavelength conversion adhesive layer 210 ′ at the second exposed side. In detail, the flat portion 212a "of the low-concentration fluorescent adhesive layer 212" has a first thickness T1 in the direction of the line X'-X ', and the flat portion 212a of the low-concentration fluorescent adhesive layer 212 " '' Has a second thickness T2 in the direction D2 of Y'-Y ', and the first thickness T1 is different from the second thickness T2. Preferably, the first thickness T1 is between 50 microns and 200 microns, and the second thickness T2 is between 20 microns and 50 microns, for example.

Since the flat portion 212a '' of the low-concentration fluorescent adhesive layer 212 '' in this embodiment has a first thickness T1 and a second thickness respectively in the X'-X 'direction and the Y'-Y' direction, T2, therefore, it is possible to effectively reduce the decrease in brightness caused by the dark band between two adjacent light-emitting units 220, and further improve the light-emitting uniformity of the light-emitting device 200e. In addition, it is worth mentioning that the direction of the line Y'-Y 'is taken as an example. When the thickness T2 of the flat portion 212a "of the low-concentration fluorescent adhesive layer 212"' is increased by, for example, 0.04 mm (mm) When it is 0.2 mm (mm), the light emitting angle of the light emitting unit 220 can also be increased from 120 degrees to 130 degrees, which means that the light emitting angle of the light emitting unit 220 can be increased by 10 degrees. In short, the thickness of the flat plate portion 212a '' of the low-concentration fluorescent adhesive layer 212 '' 'is positively related to the light emitting angle of the light emitting unit 220.

22A to 22J are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. FIG. 23 is a comparison diagram for measuring the color temperature of the light-emitting device of the embodiment in FIG. 22J and the light-emitting diode structure in the conventional technology at different angles.

Referring to FIG. 22A, a first release film 30 is provided. The first release film 30 is, for example, a double-sided adhesive film. Next, a wavelength conversion adhesive layer 170b is provided on the first release film 30. The wavelength conversion adhesive layer 170b may be a single-layer adhesive layer or a multilayer adhesive layer. In this embodiment, the wavelength conversion adhesive layer 170b includes a The low-concentration fluorescent adhesive layer 174b and a high-concentration fluorescent adhesive layer 172b are located on the low-concentration fluorescent adhesive layer 174b. Here, the step of forming the wavelength conversion gel layer 170b is, for example, first forming the wavelength conversion gel layer 170b by mixing dopants and colloids, and then leaving the wavelength conversion gel layer 170b to stand for a period of time, for example, after 24 hours, a separated low level is formed. The high-concentration fluorescent adhesive layer 174b and the high-concentration fluorescent adhesive layer 172b. In addition, the wavelength conversion adhesive layer 170b is baked through heating to harden and set the low-concentration fluorescent adhesive layer 174b and the high-concentration fluorescent adhesive layer 172b.

Referring to FIG. 22B, a plurality of light-emitting units 110e are provided (three are taken as an example, but not limited thereto). Each light-emitting unit 110e has an upper surface 112e and a lower surface 114e opposite to each other, and a connection between the upper surface 112e and A side surface 116e of the lower surface 114e and a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114e and separated from each other. The width of each light emitting unit 110e is W _E. The light emitting unit 110e has a light emitting diode structure, for example.

Referring to FIG. 22C and FIG. 22D, a plurality of trenches C ″ is formed in the wavelength conversion adhesive layer 170 b to define a plurality of bonding areas BA between the trenches C ″. Please refer to FIG. 22C. First, a part of the high-concentration fluorescent adhesive layer 172b and a part of the low-concentration fluorescent adhesive layer 174b in the wavelength conversion adhesive layer 170b are removed to form a plurality of first sub-trenches C1 ''. The first sub-grooves C1 ″ form a plurality of first land portions P1 in the bonding areas BA, respectively. Each first mesa portion P1 further includes a first portion 172b1 of the high-concentration fluorescent adhesive layer 172b and a first portion 174b1 of the low-concentration fluorescent adhesive layer 174b. The first portion 172b1 of the high-concentration fluorescent adhesive layer 172b is disposed on the first portion 174b1 of the low-concentration fluorescent adhesive layer 174b. Next, referring to FIG. 22D, a part of the low-concentration phosphor layer 174b is removed to form a plurality of second sub-trenches C2 '' in the first sub-trenches C1 ''. The second sub-grooves C2 ″ form a plurality of second land portions P2 in the bonding areas BA, respectively. Each second platform portion P2 further includes a second portion 174b2 of the low-concentration fluorescent adhesive layer 174, and the first portion 174b1 of the low-concentration fluorescent adhesive layer 174b is connected to the second portion 174b2 of the low-concentration fluorescent adhesive layer 174b. A trench C ″ includes a first sub-trench C1 ″ and a second sub-trench C2 ″. The width of the adhesive layer in a high concentration of fluorescent joining region BA 172b1 is W _H, the width of the low concentration of fluorescent paste layer 174b is W _L, the width of the light emitting unit 110e is W _E, the above-described step further satisfy the following inequality: W _E <W _L , W _H <W _L, and 0.8 <W _H / W _E ≦ 1.2.

Referring to FIG. 22E, a plurality of transparent adhesive layers 150e are formed on the high-concentration fluorescent adhesive layers 172b in the bonding areas BA, respectively. The light-transmitting adhesive layer 150e is, for example, Silicone.

Referring to FIG. 22F, the light emitting units 110e and the upper surface 112e are respectively bonded to the high-concentration fluorescent adhesive layers 172b in the bonding areas BA through the transparent adhesive layers 150e. Due to the capillary phenomenon, the transparent adhesive layer 150e has a slope of curvature, and the closer to the upper surface 112e of the light emitting unit 110e, the thicker the transparent adhesive layer 150e is. Here, the purpose of the transparent adhesive layer 150e is to fix the position of the light emitting unit 110e.

Referring to FIG. 22G, a reflection protection member 120e is formed on the wavelength conversion adhesive layer 170b and between the light emitting units 110e and fills the trenches C ''. The reflection protection member 120e exposes the electrode pads 113 and 115 of the light emitting units 110e. Here, the reflection protection member 120e is, for example, a white glue layer.

Referring to FIG. 22H, the reflection protection member 120e is left standing so that the reflection protection member 120e forms a concave surface CS recessed in the direction of the wavelength conversion adhesive layer 170b. Next, the reflection protection member 120e is cured to fix the shape of the reflection protection member 120e.

Finally, referring to FIG. 22I and FIG. 22J at the same time, a cutting process is performed to cut the reflective protection member 120e and the low-concentration fluorescent adhesive layer 174b along the extending direction of the trench C ″ to form a plurality of light-emitting devices separated from each other. 100q. And the first release layer 30 is removed. This completes the production of the light emitting device 100q.

Please refer to FIG. 22J again. Structurally, the light-emitting device 100q of this embodiment includes a light-emitting unit 110e, a reflection protection member 120e, a light-transmissive adhesive layer 150e, and a wavelength conversion adhesive layer 170b. In the following paragraphs, the configuration relationship between the components will be explained in detail.

The wavelength conversion adhesive layer 170b is disposed on the upper surface 112e of the light emitting unit 110e. The wavelength conversion adhesive layer 170b includes a low concentration fluorescent adhesive layer 174b and a high concentration fluorescent adhesive layer 172b, and the high concentration fluorescent adhesive layer 172b is located between the low concentration fluorescent adhesive layer 174b and the light emitting unit 110e. In more detail, the wavelength conversion adhesive layer 170b further includes a first platform portion P1 and a plurality of second platform portions P2. These second platform portions P2 are located on opposite sides of the first platform portion P1. The first platform portion P1 includes a high-concentration fluorescent adhesive layer 172b and a first portion 174b1 of the low-concentration fluorescent adhesive layer 174b. The second stage portion P2 includes a second portion 174b2 of the low-concentration fluorescent adhesive layer 174b. The first portion 174b1 of the low-concentration phosphor layer 174b is connected to the second portion 174b2 of the low-concentration phosphor layer 174b.

The reflection protection member 120e covers the light-emitting unit 110e and a part of the wavelength conversion adhesive layer 170b, and at least the two electrode pads 113 and 115 and the low-concentration fluorescent adhesive layer 174b of the light-emitting unit 110e are exposed. The reflection protection member 120e has a reflection surface RS, and the reflection surface RS is in contact with the light emitting unit 110e. More specifically, the reflecting surface RS is a curved surface, and the first side of the reflecting surface RS is in contact with the light emitting unit 110e, and the second side of the reflecting surface RS faces the wavelength conversion adhesive layer 170b and extends away from the light emitting unit 110e. The reflection protection member 120e has a concave surface CS. The concave surface CS is recessed in the direction of the wavelength conversion adhesive layer 170b and faces the outside. When the light-emitting device 100q of this embodiment is connected to an external substrate (such as a backplane, a printed circuit board, or other types of substrates in a display panel), the reflective protection member 120e is designed to have a surface CS that is exposed to the outside and has a concave CS. It can avoid the gap between the light-emitting device 100q and the external substrate caused by the protruding of the reflection-protective member 120e between the reflection protection member 120e and the external substrate. The generation of this gap will cause the electrode pads 113 and 115 of the light-emitting unit 110e to be ineffective Ground is bonded to the external substrate.

The transparent adhesive layer 150e is disposed on the low-concentration fluorescent adhesive layer 174b and extends to the side surface 116e of the light emitting unit 110e. The light-transmissive adhesive layer 150e covers the side surface 116e of the light emitting unit 110e, the high-concentration fluorescent adhesive layer 172b, and a local low-concentration fluorescent adhesive layer 174b.

Referring to FIGS. 22J and FIG. 23, the light emitting apparatus 100q according to the present embodiment, the width of the high concentration of fluorescent paste layer 172b is W _H, the width of the low concentration of fluorescent paste layer 174b is W _L, the width of the light emitting unit 110e W _E. The light emitting device 100q further satisfies the following inequalities: W _E <W _L , W _H <W _L, and 0.8 <W _H / W _E ≦ 1.2. The light-emitting device 100q of this embodiment is designed to satisfy the above inequality, and the light beam L1 (light beam intensity) corresponding to the light-emitting unit 110e near the optical axis will sequentially penetrate the high-concentration fluorescent adhesive layer near the optical axis. 172b and the low-concentration fluorescent adhesive layer 174b, and the light beam L2 corresponding to the light-emitting unit 110e away from the optical axis (light beam intensity is weaker) penetrates the light-transmissive adhesive layer 150e and the low-concentration fluorescent adhesive layer far from the optical axis 174b. Therefore, the light intensity of the converted light beam L1 'excited by the light beam L1 of the high-concentration fluorescent adhesive layer 172b and the low-concentration fluorescent adhesive layer 174b near the optical axis is stronger than that of the low-concentration fluorescent adhesive layer far from the optical axis. 174b The light intensity of the converted light beam L2 'excited by the light beam L2. The light intensity ratio between the light beam L1 and the converted light beam L1 'is more consistent with the light intensity ratio between the light beam L2 and the converted light beam L2'. As shown in FIG. 23, compared with the color light emitted from the light-emitting diode structure in the conventional technology, the color temperature of the color light emitted by the light-emitting device 100q of this embodiment at different angles is more consistent.

It is worth mentioning that in the light emitting device 100q of this embodiment, the thickness and width of the high-concentration fluorescent adhesive layer 172b2 and the low-concentration fluorescent adhesive layer 174b at different positions in the wavelength conversion adhesive layer 170b can be adjusted by adjusting variables such as the thickness and width To further adjust the color temperature of the color light emitted by the light emitting device 100q at different angles.

In summary, in the light-emitting device according to the embodiment of the present invention, the width of the high-concentration fluorescent adhesive layer is W _H , the width of the low-concentration fluorescent adhesive layer is W _L , and the width of the light-emitting unit is W _E. The light emitting device further satisfies the following inequalities: W _E <W _L , W _H <W _L and 0.8 <W _H / W _E ≦ 1.2. By satisfying the design of the above inequality, the light path of the light beam (light beam intensity) corresponding to the light emitting unit near the optical axis passes through a high-concentration fluorescent glue layer in the light emitting device, and the light unit emits light corresponding to the light beam (Light beam intensity is weaker) The light path passes through a lower concentration fluorescent glue layer in the light emitting device. Therefore, the color temperature of the colored light emitted by the light-emitting device according to the embodiment of the present invention at different angles is relatively consistent. Since one step of the method for manufacturing the light emitting device according to the embodiment of the present invention conforms to the above inequality, the color temperature of the colored light emitted by the light emitting device manufactured by the manufacturing method is more consistent at different angles.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10‧‧‧ substrate

10a‧‧‧ double-sided adhesive film

20‧‧‧ another substrate

20a‧‧‧UV film

30‧‧‧The first release film

40‧‧‧Second Release Film

100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 100q, 200a, 200b, 200c, 200d

101‧‧‧unit

110a, 110b, 110c, 110c ’, 110e, 220‧‧‧ light-emitting units

112a, 112b, 112c, 112e, 222‧‧‧

113、113 ’、 223‧‧‧First electrode pad

113a‧‧‧first bottom

113b‧‧‧first side surface

114a, 114b, 114c, 114e, 224‧‧‧ lower surface

115、115 ’、 225‧‧‧Second electrode pad

115a‧‧‧Second bottom surface

115b‧‧‧Second side surface

116a, 116b, 116c, 116e‧‧‧ side surfaces

120, 120 ’, 120c, 120d, 120m, 120n, 120p, 240, 240a, 240b ‧‧‧ reflection protection

121‧‧‧Edge

122, 122c, 122d‧‧‧ Top

124, 124m, 124n‧‧‧ Underside

130d, 130c‧‧‧First extension electrode

140d, 140c‧‧‧Second extension electrode

150‧‧‧ encapsulant

150c, 150c ’, 230a, 230b, 230c‧‧‧Transparent adhesive layer

160、160’‧‧‧Transparent layer

170, 170 ’, 170a, 170b, 210, 210’ ‧‧‧ wavelength conversion adhesive layer

171, 171a‧‧‧Side edge

172, 172a, 172b, 214, 214’‧‧‧‧high concentration fluorescent adhesive layer

172b1, 174b1‧‧‧ Part I

173‧‧‧Top

173a‧‧‧Edge

174, 174a, 174b, 212, 212 ’, 212’’‧‧‧ low concentration fluorescent adhesive layer

174b2‧‧‧Part Two

212a, 212a ’, 212a’’‧‧‧ Flat

212b‧‧‧ protrusion

212b’‧‧‧ protruding sub-section

226‧‧‧Side surface

232‧‧‧ concave surface

234‧‧‧ convex surface

236‧‧‧ inclined surface

242, 242a, 242b‧‧‧Reflective surface

A‧‧‧Unit

BA‧‧‧Joint Area

C, C’’‧‧‧ groove

C1, C1’‧‧‧ groove

C1’’‧‧‧first sub-groove

C2’‧‧‧second trench

C2’’‧‧‧Second sub-groove

CS‧‧‧ Concave

D‧‧‧ Depth

E‧‧‧Extended electrode layer

G‧‧‧Pitch

H‧‧‧height difference

L‧‧‧ cutting line

L1, L2‧‧‧‧Beams

L1 ’, L2’‧‧‧‧Converted beam

M1‧‧‧First metal layer

M2‧‧‧Second metal layer

P1‧‧‧First Platform Department

P2‧‧‧Second Platform Department

RS‧‧‧ reflective surface

S‧‧‧ Clearance

T‧‧‧thickness

T1‧‧‧first thickness

T2‧‧‧Second thickness

W, W _E , W _L , W _H ‧‧‧ width

X-X, X’-X ’, Y-Y, Y’-Y’‧‧‧ line

FIG. 1 is a schematic diagram of a light emitting device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 3 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 4 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 5 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 6 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 8 is a schematic diagram of a light emitting device according to another embodiment of the present invention. FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the present invention. 10A to 10D are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the present invention. 11A to 11C are schematic cross-sectional views illustrating partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. 12A to 12E are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to another embodiment of the present invention. 13A to 13D are schematic cross-sectional views illustrating partial steps of a method for manufacturing a light emitting device according to another embodiment of the present invention. 14A to 14E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. 15A to 15E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. 16A to 16C are schematic cross-sectional views of light emitting devices according to various embodiments of the present invention. 17A to 17E are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to an embodiment of the present invention. 18A and 18B are schematic cross-sectional views of two light emitting devices according to two embodiments of the present invention. 19A to 19E are schematic cross-sectional views illustrating a method for manufacturing a light-emitting device according to another embodiment of the present invention. FIG. 20A is a schematic perspective view of the light-emitting device of FIG. 19E. FIG. 20B is a schematic cross-sectional view taken along line X-X of FIG. 20A. 21A is a schematic perspective view of a light emitting device according to another embodiment of the present invention. 21B and 21C are schematic cross-sectional views taken along lines X'-X 'and Y'-Y' of Fig. 21A, respectively. 22A to 22J are schematic cross-sectional views illustrating a method for manufacturing a light emitting device according to another embodiment of the present invention. FIG. 23 is a comparison diagram of the color temperature measured by the light-emitting device of the embodiment in FIG. 22J and the light-emitting device of the prior art at different angles.

Claims (13)

A light emitting device includes: at least one light emitting unit having an upper surface and a lower surface opposite to each other, the light emitting unit including two electrode pads, and the two electrode pads are located on the lower surface of the light emitting unit; a wavelength conversion An adhesive layer is disposed on the upper surface of the light-emitting unit. The wavelength conversion adhesive layer includes a low concentration fluorescent adhesive layer and a high concentration fluorescent adhesive layer, and the high concentration fluorescent adhesive layer is located on the low concentration fluorescent adhesive layer. Between the light-emitting unit and the light-emitting unit; and a reflection protection member covering the light-emitting unit and a part of the wavelength conversion adhesive layer, and at least exposing the two electrode pads and the low-concentration fluorescent adhesive layer of the light-emitting unit, wherein, The width of the high-concentration fluorescent adhesive layer is W _H , the width of the low-concentration fluorescent adhesive layer is W _L , the width of the light-emitting unit is W _E , and the light-emitting device further satisfies the following inequality: W _E <W _L , W _H <W _L ; and 0.8 <W _H / W _E ≦ 1.2. The light-emitting device according to item 1 of the patent application scope, wherein the wavelength conversion adhesive layer further includes a first platform portion and a plurality of second platform portions, and the first platform portion includes the high-concentration fluorescent adhesive layer and the low-level fluorescent layer. A first portion of the concentrated fluorescent glue layer, and each of the second platform portions includes a second portion of the low-concentration fluorescent glue layer, and the first portion of the low-concentration fluorescent glue layer and the low-concentration fluorescent glue This second part of the layer is connected. The light-emitting device according to item 1 of the scope of patent application, wherein the reflection protection member has a concave surface, and the concave surface is recessed toward the wavelength conversion adhesive layer. The light-emitting device according to item 1 of the patent application scope further includes a light-transmitting adhesive layer, and the light-emitting unit further includes a side surface connected to the upper surface and the lower surface, wherein the light-transmitting adhesive layer is disposed on the low surface. The concentrated fluorescent glue layer extends to the side surface of the light emitting unit. The light-emitting device according to item 1 of the scope of patent application, wherein the reflection protection member covers the wavelength conversion adhesive layer to expose a part of the side surface of the wavelength conversion adhesive layer. The light-emitting device according to item 1 of the scope of patent application, wherein the reflection protection member has a reflection surface, and the reflection surface is in contact with the light-emitting unit. The light-emitting device according to item 6 of the patent application, wherein a first side of the reflective surface is in contact with the light-emitting unit, and a second side of the reflective surface faces the wavelength conversion adhesive layer and away from Direction. The light-emitting device according to item 6 of the application, wherein the reflective surface is a curved surface. A manufacturing method of a light-emitting device includes: forming a wavelength conversion adhesive layer, the wavelength conversion adhesive layer including a low-concentration fluorescent adhesive layer and a high-concentration fluorescent adhesive layer; providing a plurality of light-emitting units; Multiple grooves are formed in the grooves to define a plurality of bonding areas between the grooves, and the width of the high-concentration fluorescent adhesive layer in the bonding area is W _H , and The width is W _L and the width of the light-emitting unit is W _E. This step more satisfies the following inequalities: W _E <W _L , W _H <W _L and 0.8 <W _H / W _E ≦ 1.2; Bonding the high-concentration fluorescent adhesive layers in the bonding areas; forming a reflective protection member on the wavelength conversion adhesive layer and between the light-emitting units and filling the trenches, wherein the reflective protection member is exposed Out the electrode pads of the light emitting units; and perform a cutting process along the grooves to form a plurality of light emitting devices. The method for manufacturing a light emitting device according to item 9 of the scope of patent application, wherein the step of forming the grooves in the wavelength conversion adhesive layer further includes: removing the high-concentration fluorescent adhesive layer and the local The low-concentration fluorescent adhesive layer forms a plurality of first sub-grooves, and the first sub-grooves respectively form a plurality of first platform portions in the bonding areas, and each of the first platform portions further includes the first platform portion. A first part of the high-concentration fluorescent adhesive layer and a first part of the low-concentration fluorescent adhesive layer; and removing a part of the low-concentration fluorescent adhesive layer to form a plurality of first sub-grooves Two sub-grooves, each of which forms a plurality of second platform portions in the bonding areas, wherein each of the second platform portions further includes a second portion of the low-concentration fluorescent adhesive layer, and The first portion of the low-concentration fluorescent adhesive layer is connected to the second portion of the low-concentration fluorescent adhesive layer, and one of the grooves includes a first sub-groove and a second sub-groove. The method for manufacturing a light-emitting device according to item 9 of the scope of patent application, wherein before the step of bonding the light-emitting units to the high-concentration fluorescent adhesive layers in the bonding regions, the method further includes: forming a plurality of The transparent adhesive layer is on the high-concentration fluorescent adhesive layers in the bonding areas. The method for manufacturing a light-emitting device according to item 11 of the scope of patent application, wherein in the step of respectively bonding the light-emitting units to the high-concentration fluorescent adhesive layers in the bonding areas, the light-emitting units respectively transmit through the The light-transmitting adhesive layers are bonded to the high-concentration fluorescent adhesive layers. The method for manufacturing a light emitting device according to item 9 of the scope of patent application, wherein after the step of forming the reflection protection member on the wavelength conversion adhesive layer and between the light emitting units and filling the grooves, the method further includes: : Resting the reflection protection member so that the reflection protection member forms a concave surface recessed in the direction of the wavelength conversion adhesive layer; and curing the reflection protection member.