TW201811857A - Boron-containing polymer and use thereof - Google Patents
Boron-containing polymer and use thereof Download PDFInfo
- Publication number
- TW201811857A TW201811857A TW106117803A TW106117803A TW201811857A TW 201811857 A TW201811857 A TW 201811857A TW 106117803 A TW106117803 A TW 106117803A TW 106117803 A TW106117803 A TW 106117803A TW 201811857 A TW201811857 A TW 201811857A
- Authority
- TW
- Taiwan
- Prior art keywords
- boron
- containing polymer
- nitrogen
- polymer compound
- rings
- Prior art date
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 68
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 67
- 229920000642 polymer Polymers 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- TZHYBRCGYCPGBQ-UHFFFAOYSA-N [B].[N] Chemical compound [B].[N] TZHYBRCGYCPGBQ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 125000001424 substituent group Chemical group 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims description 61
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000002950 monocyclic group Chemical group 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 abstract description 9
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 description 22
- 238000003786 synthesis reaction Methods 0.000 description 22
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 20
- 239000000243 solution Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 14
- 239000007787 solid Substances 0.000 description 13
- 229960001701 chloroform Drugs 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 9
- -1 ombiazole Chemical compound 0.000 description 9
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 8
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 5
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910000085 borane Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005227 gel permeation chromatography Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 229930192474 thiophene Natural products 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- BDEOXDSSZJCZPE-UHFFFAOYSA-N [1,3]thiazolo[4,5-d][1,3]thiazole Chemical compound N1=CSC2=C1N=CS2 BDEOXDSSZJCZPE-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical compound C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 3
- 238000006069 Suzuki reaction reaction Methods 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000004414 alkyl thio group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 150000001721 carbon Chemical group 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000004440 column chromatography Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WVPBJPFUIPJXKG-UHFFFAOYSA-N trihexadecylborane Chemical compound C(CCCCCCCCCCCCCCC)B(CCCCCCCCCCCCCCCC)CCCCCCCCCCCCCCCC WVPBJPFUIPJXKG-UHFFFAOYSA-N 0.000 description 3
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- GQEZCXVZFLOKMC-UHFFFAOYSA-N 1-hexadecene Chemical compound CCCCCCCCCCCCCCC=C GQEZCXVZFLOKMC-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 238000000944 Soxhlet extraction Methods 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000007810 chemical reaction solvent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical group C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- UBJFKNSINUCEAL-UHFFFAOYSA-N lithium;2-methylpropane Chemical compound [Li+].C[C-](C)C UBJFKNSINUCEAL-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000011593 sulfur Chemical group 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 2
- CRUIOQJBPNKOJG-UHFFFAOYSA-N thieno[3,2-e][1]benzothiole Chemical compound C1=C2SC=CC2=C2C=CSC2=C1 CRUIOQJBPNKOJG-UHFFFAOYSA-N 0.000 description 2
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 2
- CYPYTURSJDMMMP-WVCUSYJESA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 CYPYTURSJDMMMP-WVCUSYJESA-N 0.000 description 1
- OEANUJAFZLQYOD-CXAZCLJRSA-N (2r,3s,4r,5r,6r)-6-[(2r,3r,4r,5r,6r)-5-acetamido-3-hydroxy-2-(hydroxymethyl)-6-methoxyoxan-4-yl]oxy-4,5-dihydroxy-3-methoxyoxane-2-carboxylic acid Chemical group CC(=O)N[C@H]1[C@H](OC)O[C@H](CO)[C@H](O)[C@@H]1O[C@H]1[C@H](O)[C@@H](O)[C@H](OC)[C@H](C(O)=O)O1 OEANUJAFZLQYOD-CXAZCLJRSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- FLBAYUMRQUHISI-UHFFFAOYSA-N 1,8-naphthyridine Chemical compound N1=CC=CC2=CC=CN=C21 FLBAYUMRQUHISI-UHFFFAOYSA-N 0.000 description 1
- HVXLKRWRWNFGBA-UHFFFAOYSA-N 2,5-diaminobenzene-1,4-dithiol;dihydrochloride Chemical compound Cl.Cl.NC1=CC(S)=C(N)C=C1S HVXLKRWRWNFGBA-UHFFFAOYSA-N 0.000 description 1
- UTKPZZGBROTDKR-UHFFFAOYSA-N 2,6-dibromodithieno[2,3-a:2',3'-d]thiophene Chemical compound C1=C(Br)SC2=C1SC1=C2SC(Br)=C1 UTKPZZGBROTDKR-UHFFFAOYSA-N 0.000 description 1
- SXNCMLQAQIGJDO-UHFFFAOYSA-N 2-bromo-5-(5-bromothiophen-2-yl)thiophene Chemical compound S1C(Br)=CC=C1C1=CC=C(Br)S1 SXNCMLQAQIGJDO-UHFFFAOYSA-N 0.000 description 1
- VQQLWBUTTMNMFT-UHFFFAOYSA-N 3-bromothiophene-2-carboxylic acid Chemical compound OC(=O)C=1SC=CC=1Br VQQLWBUTTMNMFT-UHFFFAOYSA-N 0.000 description 1
- SFHYNDMGZXWXBU-LIMNOBDPSA-N 6-amino-2-[[(e)-(3-formylphenyl)methylideneamino]carbamoylamino]-1,3-dioxobenzo[de]isoquinoline-5,8-disulfonic acid Chemical compound O=C1C(C2=3)=CC(S(O)(=O)=O)=CC=3C(N)=C(S(O)(=O)=O)C=C2C(=O)N1NC(=O)N\N=C\C1=CC=CC(C=O)=C1 SFHYNDMGZXWXBU-LIMNOBDPSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 238000007096 Glaser coupling reaction Methods 0.000 description 1
- 238000003747 Grignard reaction Methods 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- 238000007341 Heck reaction Methods 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- 238000006411 Negishi coupling reaction Methods 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 238000006619 Stille reaction Methods 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000006887 Ullmann reaction Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- UWTDFICHZKXYAC-UHFFFAOYSA-N boron;oxolane Chemical compound [B].C1CCOC1 UWTDFICHZKXYAC-UHFFFAOYSA-N 0.000 description 1
- KWTSZCJMWHGPOS-UHFFFAOYSA-M chloro(trimethyl)stannane Chemical compound C[Sn](C)(C)Cl KWTSZCJMWHGPOS-UHFFFAOYSA-M 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000003914 fluoranthenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC=C4C1=C23)* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 150000005171 halobenzenes Chemical group 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- WGOPGODQLGJZGL-UHFFFAOYSA-N lithium;butane Chemical compound [Li+].CC[CH-]C WGOPGODQLGJZGL-UHFFFAOYSA-N 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- DVSDBMFJEQPWNO-UHFFFAOYSA-N methyllithium Chemical compound C[Li] DVSDBMFJEQPWNO-UHFFFAOYSA-N 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphene Chemical group C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C=CC3=CC2=C1 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- MZMKPVULHIUGDS-UHFFFAOYSA-N pyridine;1,3-thiazole Chemical compound C1=CSC=N1.C1=CC=NC=C1 MZMKPVULHIUGDS-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- MABNMNVCOAICNO-UHFFFAOYSA-N selenophene Chemical compound C=1C=C[se]C=1 MABNMNVCOAICNO-UHFFFAOYSA-N 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000005579 tetracene group Chemical group 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- UKTDFYOZPFNQOQ-UHFFFAOYSA-N tributyl(thiophen-2-yl)stannane Chemical compound CCCC[Sn](CCCC)(CCCC)C1=CC=CS1 UKTDFYOZPFNQOQ-UHFFFAOYSA-N 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
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Abstract
Description
本發明涉及含硼高分子化合物及其用途。 The invention relates to a boron-containing polymer compound and uses thereof.
隨著有機半導體元件的實用化,需要一種高性能且可適用價格低廉的塗布過程的製造方法之有機半導體。其中,高分子有機半導體擁有在塗布時容易得到優異的膜質且元件特性穩定的優點。另外,為了使高分子有機半導體具有更高的移動度,被期待著導入π共軛面積較大的單位結構,且為進一步的高分子量體。 With the practical use of organic semiconductor devices, there is a need for organic semiconductors that are high-performance and can be applied to inexpensive coating processes. Among them, polymer organic semiconductors have the advantages of easily obtaining excellent film quality and stable element characteristics during coating. In addition, in order to make the polymer organic semiconductor have a higher mobility, it is expected to introduce a unit structure having a larger π conjugate area and a further high molecular weight body.
另一方面,非專利文獻1公開了藉由硼-氮配位元鍵結構的導入,使LUMO/HOMO位準(level)深化的內容,而專利文獻1公開了能夠提高有機半導體性能的內容。 On the other hand, Non-Patent Document 1 discloses the content of deepening the LUMO / HOMO level by introducing a boron-nitrogen coordination bond structure, and Patent Document 1 discloses the content that can improve the performance of an organic semiconductor.
【非專利文獻1】Angew.Chem.Int.Ed.2015,54,3648-3652. [Non-Patent Document 1] Angew. Chem. Int. Ed. 2015, 54, 3648-3652.
【專利文獻1】國際公開第2006/070817號 [Patent Document 1] International Publication No. 2006/070817
然而,具有較大π共軛面積的單位的高分子有機半導體若被高分子量化則溶解性下降,在溶液中的安定性也隨著變差,因此塗布過程的處理中存在問題。一般而言,為了進一步提高溶解性,可以想到將鏈狀取代基鍵合於π共軛單位,使該鏈狀取代基延伸或分支等情況。但由於在有機半導體中分子的排列對特性有很大的影響,若沒有在結構上的適當的位置配置鏈狀取代基,則在乾燥後的有機半導體膜內的分子的配置對特性有很大的影響,若没有在結構上的適當的位置配置鏈狀取代基,則在乾燥後的有機半導體膜內的分子的配置‧排列會變得不恰當。在有機半導體中,由於分子的排列也對移動度產生很大的影響,即使溶解性有提高,不一定會使移動度進一步提高。因此,兼顧溶解性和移動度是非常困難的。 However, a polymer organic semiconductor having a unit with a large π conjugate area decreases in solubility if the polymer is quantified, and the stability in the solution also deteriorates accordingly. Therefore, there are problems in the processing of the coating process. In general, in order to further improve solubility, a chain substituent may be bonded to a π-conjugated unit, and the chain substituent may be extended or branched. However, since the arrangement of molecules in an organic semiconductor has a great influence on the characteristics, if no chain-like substituents are arranged at appropriate positions on the structure, the arrangement of the molecules in the dried organic semiconductor film has a large characteristic. If the chain-like substituents are not arranged at appropriate positions on the structure, the arrangement and arrangement of molecules in the dried organic semiconductor film will become inappropriate. In organic semiconductors, the mobility of molecules is also greatly affected by the arrangement of molecules. Even if the solubility is improved, the mobility may not be further improved. Therefore, it is very difficult to balance solubility and mobility.
並且,雖然公開了使LUMO/HOMO位準深化,使有機半導體的性能提高的可能性,但在專利文獻1中得到的僅限於二聚體結構。在非專利文獻1中,雖然成功聚合,但側鏈不恰當,單位結構的π共軛面積也較小,沒有獲得足夠的半導體特性。 Furthermore, although the possibility of deepening the LUMO / HOMO level and improving the performance of an organic semiconductor has been disclosed, what is obtained in Patent Document 1 is limited to a dimer structure. In Non-Patent Document 1, although the polymerization was successful, the side chain was inappropriate, the π conjugate area of the unit structure was small, and sufficient semiconductor characteristics were not obtained.
本發明是鑒於這樣的情況而完成的,提供一種有機半導體用含硼高分子化合物,該有機半導體用含硼高分子化合物的LUMO/HOMO位準深且在單位結構中具有寬廣的π共軛平面的同時能夠根據較高的可溶性進行高 分子量化,可適用於有機薄膜太陽能電池、有機EL、有機電晶體、有機記憶體、電子紙張、熱電轉換元件、光感測器等用途的有機半導體用含硼高分子化合物。 The present invention has been made in view of such circumstances, and provides a boron-containing polymer compound for an organic semiconductor. The boron-containing polymer compound for an organic semiconductor has a deep LUMO / HOMO level and a wide π-conjugated plane in a unit structure. At the same time, it can quantify high molecular weight based on high solubility, and is suitable for organic semiconductor containing organic thin film solar cells, organic EL, organic transistors, organic memory, electronic paper, thermoelectric conversion elements, light sensors and other applications. Boron polymer compound.
根據本發明的幾種方式,提供一種含硼高分子化合物,其包含至少以下式(1)表示的結構單元,該結構單元包含具有2個硼-氮配位元鍵的結構W、作為具有共軛結構的2價取代基的結構π,
本發明人等對於移動度優異的含硼高分子化合物進行研究之後發現,通過在共軛平面的廣闊的單位結構中導入至少2個硼-氮配位鍵,在硼原子上導入含烷基的取代基,能夠提供LUMO/HOMO位準深且為有助於提高移動度的高分子量,在單位結構中具有廣闊的共軛平面的高分子化合物。並且,該高分子化合物可以作為有機半導體使用。 The present inventors have studied a boron-containing polymer compound having excellent mobility, and found that by introducing at least two boron-nitrogen coordination bonds into a broad unit structure of a conjugate plane, an alkyl group-containing The substituent can provide a polymer compound having a deep LUMO / HOMO level and a high molecular weight that contributes to improvement in mobility, and has a wide conjugate plane in the unit structure. The polymer compound can be used as an organic semiconductor.
以下例示本發明的各種實施方式。以下示出的實施方式可以相互組合。 The following illustrates various embodiments of the present invention. The embodiments shown below can be combined with each other.
優選重均分子量為2×104~1×106。 The weight average molecular weight is preferably 2 × 10 4 to 1 × 10 6 .
優選W藉由W中的5元環與相鄰的W或者π鍵合。 Preferably, W is bonded to adjacent W or π through a 5-membered ring in W.
根據本發明的別的觀點,提供一種含有上述含硼高分子化合物的有機半導體。 According to another aspect of the present invention, an organic semiconductor containing the above-mentioned boron-containing polymer compound is provided.
以下對本發明的一個實施方式進行說明。以下示出的實施方式中表示的各種特徵事項可以互相組合。並且,各特徵事項獨立地使發明成立。 An embodiment of the present invention will be described below. Various characteristic items shown in the embodiments described below can be combined with each other. In addition, each characteristic item independently establishes the invention.
本發明的一個實施方式的含硼高分子化合物可作為有機半導體使用,是以下式(1)表示的高分子化合物。 The boron-containing polymer compound according to one embodiment of the present invention can be used as an organic semiconductor, and is a polymer compound represented by the following formula (1).
即,以包含至少具有2個硼-氮配位元鍵的結構W的結構作為單位結構的高分子化合物。優選單位結構除W之外包含作為具有共軛結構的2價取代基的結構π。即,m為0或者1,優選為1。這是因為,藉由使其為包含π的結構,推斷在單位結構中具有起到供體以及受體的作用的兩結構,分子鏈之間的相互作用會容易變強,移動度會提高。 That is, a polymer compound having a structure including a structure W having at least two boron-nitrogen coordination bonds as a unit structure. The unit structure preferably contains a structure π as a divalent substituent having a conjugate structure in addition to W. That is, m is 0 or 1, preferably 1. This is because the structure containing π is assumed to have two structures functioning as a donor and an acceptor in the unit structure, and the interaction between the molecular chains tends to be strong and the mobility is improved.
在上述式(1)中以W表示的單位結構為以下式(2)或者(3)表示的 至少具有2個硼-氮配位元鍵的結構。 The unit structure represented by W in the above formula (1) is a structure having at least two boron-nitrogen coordination bonds represented by the following formula (2) or (3).
從移動度的觀點,優選在單位結構中至少具有2個硼-氮配位鍵。被認為硼-氮之間的電子性偏離加強分子鏈之間的相互作用,且被認為藉由在單位結構中含有2個以上的硼-氮配位元鍵,電子性偏離變得更大,分子鏈之間的相互作用變強,從而提高移動度。從合成的容易性的觀點,優選單位結構中具有2個硼-氮配位鍵。 From the viewpoint of mobility, it is preferable to have at least two boron-nitrogen coordination bonds in the unit structure. It is thought that the electronic deviation between boron and nitrogen strengthens the interaction between the molecular chains, and it is considered that by including more than two boron-nitrogen coordination bonds in the unit structure, the electronic deviation becomes larger, The interaction between the molecular chains becomes stronger, thereby increasing mobility. From the viewpoint of ease of synthesis, it is preferable to have two boron-nitrogen coordination bonds in the unit structure.
作為具有硼-氮配位鍵的其他效果,期待著使LUMO/HOMO位準更深,提高大氣穩定性。本發明的一個實施方式中,藉由在單位結構中包含2個以上的硼-氮配位鍵,進一步提高效果。 As another effect of having a boron-nitrogen coordination bond, it is expected to deepen the LUMO / HOMO level and improve atmospheric stability. In one embodiment of the present invention, the effect is further improved by including two or more boron-nitrogen coordination bonds in the unit structure.
W是由環X1和、X2和、Y1和、Y2和、Z構成,環X1、X2、Z表示具有 共軛結構的單環或者稠環。 W is composed of rings X 1 and X 2 and Y 1 and Y 2 and Z. The rings X 1 , X 2 and Z represent a monocyclic or fused ring having a conjugated structure.
α1與α2可以相同也可以相互不同,優選相同。另外,α3與α可以相同也可以相互不同,優選相同。在相同的情况下,相較於不同的情况,具有更容易進行合成的優點,並且由於對稱性高,分子鏈的配置‧排列易於變得恰當,移動度易於變高。 α 1 and α 2 may be the same or different from each other, and are preferably the same. In addition, α 3 and α may be the same or different from each other, and are preferably the same. In the same case, compared with different cases, it has the advantage of easier synthesis, and because of the high symmetry, the arrangement and arrangement of molecular chains is easy to become appropriate, and the mobility is easy to become high.
α1與α3的一方是環Y1中的硼原子和形成硼-氮配位鍵的氮原子,另一方沒有特別限定,例如為碳原子。另外,α2與α4的一方是環Y2中的硼原子和形成硼-氮配位鍵的氮原子,另一方沒有特別限定,例如為碳原子。 One of α 1 and α 3 is a boron atom in the ring Y 1 and a nitrogen atom forming a boron-nitrogen coordination bond, and the other is not particularly limited, and is, for example, a carbon atom. In addition, one of α 2 and α 4 is a boron atom in the ring Y 2 and a nitrogen atom forming a boron-nitrogen coordination bond, and the other is not particularly limited, and is, for example, a carbon atom.
環X1、X2為具有共軛結構的單環或者稠環,有時候包含形成硼-氮配位鍵的氮原子。 Rings X 1 and X 2 are monocyclic or fused rings having a conjugated structure, and sometimes contain nitrogen atoms forming a boron-nitrogen coordination bond.
環X1、X2可以不包含雜原子,單優選位包含雜原子的雜環。雜環例如為吡咯、呋喃、噻吩、硒吩、咪唑、卩比唑、噁唑、噻唑、吡啶、嘧啶、噠嗪、吡嗪等,或者這些縮合的結構,更優選含有硫原子,例如為噻吩、噻吩並噻吩、苯並噻吩、苯並二噻吩、噻唑、噻唑並噻唑等,更優選為噻吩或者噻唑。 The rings X 1 and X 2 may not contain heteroatoms, and a heterocyclic ring containing a heteroatom is preferred. Heterocycles are, for example, pyrrole, furan, thiophene, selenophene, imidazole, oxazole, oxazole, thiazole, pyridine, pyrimidine, pyridazine, pyrazine, etc., or these condensed structures, and more preferably contain a sulfur atom, such as thiophene , Thienothiophene, benzothiophene, benzodithiophene, thiazole, thiazolothiazole, and the like, and more preferably thiophene or thiazole.
當環X1、X2包含環Y1、Y2中的硼原子和形成硼-氮配位鍵的氮原子時,例如為咪唑、卩比唑、噻唑、吡啶等。優選為噻唑吡啶,更優選環X1、X2 含有硫原子,例如為噻唑。 When the rings X 1 and X 2 include a boron atom in the rings Y 1 and Y 2 and a nitrogen atom forming a boron-nitrogen coordination bond, for example, they are imidazole, ombiazole, thiazole, pyridine, and the like. Thiazole pyridine is preferred, and rings X 1 and X 2 contain a sulfur atom, for example, thiazole.
環X1以及X2的單環或者稠環可在不損害半導體特性的範圍內被取代置換,沒有限定取代基,具體而言,可以為直鏈、分岐、或者環狀的烷基、烷氧基、烷硫基、磺酸基、羥基、羧基、氨基、醯胺基、酯基、苯基等,以及也可以為被磺酸基、羥基、羧基、氨基、鹵基取代的直鏈或者支鏈狀的烷基、烷氧基烷基、環氧烷基、苯基等,也可以具有多個取代基。 The monocyclic or fused rings of the rings X 1 and X 2 may be substituted within a range that does not impair the characteristics of the semiconductor, and there is no limitation on the substituent. Specifically, the ring may be a linear, branched, or cyclic alkyl or alkoxy group. Group, alkylthio group, sulfo group, hydroxy group, carboxyl group, amino group, amido group, ester group, phenyl group, etc., and may also be a straight or branched chain substituted with sulfonate group, hydroxy group, carboxyl group, amino group, halo group The chain-like alkyl group, alkoxyalkyl group, epoxyalkyl group, phenyl group, and the like may have a plurality of substituents.
W藉由W中的5元環或者6元環與相鄰的W或者π鍵合,優選藉由5元環鍵合。這是由於在5元環時,被認為與相鄰的W或者π的立體排斥少,易於形成連續的平面結構,提高移動度。 W is bonded to adjacent W or π through a 5- or 6-membered ring in W, and is preferably bonded through a 5-membered ring. This is because in a 5-membered ring, it is considered that there is less steric repulsion from the adjacent W or π, and it is easy to form a continuous planar structure and improve mobility.
環Z為具有共軛結構的單環或者稠環,有時候包含形成硼-氮配位鍵的氮原子。環Z可以包含,也可以不包含雜原子,例如為苯、萘、蒽、吡嗪、噻吩並噻吩、苯並二噻吩、噻唑並噻唑、苯並雙噻唑等。 Ring Z is a monocyclic or fused ring having a conjugated structure, and sometimes contains a nitrogen atom that forms a boron-nitrogen coordination bond. The ring Z may or may not include a heteroatom, and examples thereof include benzene, naphthalene, anthracene, pyrazine, thienothiophene, benzodithiophene, thiazolothiazole, and benzobisthiazole.
當環Z包含環Y1、Y2中的硼原子和形成硼-氮配位鍵的氮原子時,環Z例如為吡嗪、噻唑並噻唑、萘啶、苯並雙噻唑、吡嗪雙噻唑等。優選為噻唑並噻唑或者苯並雙噻唑。 When the ring Z includes a boron atom in the rings Y 1 and Y 2 and a nitrogen atom forming a boron-nitrogen coordination bond, the ring Z is, for example, pyrazine, thiazolothiazole, naphthyridine, benzobisthiazole, pyrazinebisthiazole Wait. Preferred is thiazolothiazole or benzobisthiazole.
環Y1、Y2為具有硼-氮配位鍵的5元環。在環Y1以及Y2中形成硼-氮配位鍵的硼原子具有可以相同也可以不同的含烷基的取代基R1~R4。 The rings Y 1 and Y 2 are 5-membered rings having a boron-nitrogen coordination bond. The boron atom forming the boron-nitrogen coordination bond in the rings Y 1 and Y 2 has an alkyl group-containing substituent R 1 to R 4 which may be the same or different.
當W具有2個硼-氮配位鍵時,2個硼原子可以位於如上述(2)式的不同側,也可以位於如上述(3)的同一側。由於導入於各環的取代基,恰當的位置不同,不限定於任一個或者在任一種情況下,由於具有2個硼-氮配位鍵,認為可以具有同樣的効果。只是,從合成的容易性的觀點,如上述(2)式,很多時候位於不同側時更具有優勢。 When W has two boron-nitrogen coordination bonds, the two boron atoms may be located on different sides as in the above formula (2) or on the same side as in (3) above. The substituents introduced into each ring differ in their proper positions, and are not limited to any one or in any case. Since they have two boron-nitrogen coordination bonds, they can be considered to have the same effect. However, from the viewpoint of ease of synthesis, as in the above formula (2), it is often more advantageous when it is located on different sides.
R1~R4可以相同也可以不同,為至少具有1個可被取代的直鏈或支鏈的碳原子數10~40的烷基的1價取代基。R1~R4的烷基直接與硼原子鍵合,R1~R4也可以藉由其他骨架鍵合。上述烷基的碳原子數優選為12以上,更優選為14以上。上述烷基的碳原子數優選為30以下,更優選25為以下。應予說明,上述碳原子數為10、11、12、13、14、15、16、17、18、19、20、21、22、23、24、25、26、27、28、29、30、31、32、33、34、35、36、37、38、39、40,也可以在這裏例示的數值中的任意2個數值之間的範圍內。當導入這樣的含烷基取代基時,可以通過在溶劑中的溶解性高的塗布工程來製作有機半導體。這裏,溶劑中的溶解性是指,主要在鹵系溶劑、芳香族系溶劑等中的溶解性,具體而言為相對於三氯甲烷、氯苯、二氯苯、甲苯、均三甲苯、苯甲醚、四氫萘、環己基苯的溶解性。 R 1 to R 4 may be the same or different, and are monovalent substituents having at least one linear or branched alkyl group having 10 to 40 carbon atoms which may be substituted. An alkyl group of R 1 to R 4 is directly bonded to a boron atom, and R 1 to R 4 may be bonded through another skeleton. The number of carbon atoms of the alkyl group is preferably 12 or more, and more preferably 14 or more. The number of carbon atoms of the alkyl group is preferably 30 or less, and more preferably 25 or less. It should be noted that the above carbon number is 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30 , 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, and may be within a range between any two of the values exemplified here. When such an alkyl group-containing substituent is introduced, an organic semiconductor can be produced by a coating process having high solubility in a solvent. Here, the solubility in a solvent means the solubility mainly in a halogen-based solvent, an aromatic solvent, etc., specifically, with respect to chloroform, chlorobenzene, dichlorobenzene, toluene, mesitylene, and benzene. Solubility of methyl ether, tetrahydronaphthalene and cyclohexylbenzene.
作為可以取代R1~R4中的烷基的取代基,例如為磺酸基、羥基、烷氧基、烷硫基、羧基、酯基、氨基、醯胺基、鹵基、苯基等。 Examples of the substituent that can replace the alkyl group in R 1 to R 4 include a sulfonic acid group, a hydroxyl group, an alkoxy group, an alkylthio group, a carboxyl group, an ester group, an amino group, an amido group, a halo group, and a phenyl group.
當R1~R4藉由其他骨架鍵合時,作為上述其他骨架,例如為氧、氮、硫黃等雜原子、苯環、萘環、奧環、蒽環、菲環、芘環、屈環、並四苯環、三亞苯環、苊環、暈苯環、芴環、熒蒽環、並五苯環、此環、戊芬環、茜環、皮蒽環等芳香環、吡啶、咪唑、噻吩等雜環,也可以將多個組合。另外,也可以在其他骨架與硼之間進一步夾有碳原子數為1~6的烷基鏈。 When R 1 to R 4 are bonded by other skeletons, the other skeletons described above include, for example, heteroatoms such as oxygen, nitrogen, and sulfur, benzene rings, naphthalene rings, Austrian rings, anthracene rings, phenanthrene rings, pyrene rings, and fluorene. Ring, tetracene ring, triphenylene ring, fluorene ring, halobenzene ring, fluorene ring, fluoranthene ring, pentacene ring, this ring, pentaphen ring, sane ring, dermatan ring and other aromatic rings, pyridine, imidazole You may combine multiple heterocyclic rings, such as thiophene and thiophene. In addition, an alkyl chain having 1 to 6 carbon atoms may be further interposed between another skeleton and boron.
R1~R4優選直鏈或者支鏈的烷基直接與硼鍵合,或者,藉由氧或硫黃以及/或苯基、苄基、苯己基與硼鍵合,更優選直鏈或者支鏈的烷基直接與硼鍵合,更優選直鏈的烷基直接與硼鍵合。 R 1 to R 4 are preferably a straight-chain or branched alkyl group directly bonded to boron, or bonded to boron via oxygen or sulfur and / or phenyl, benzyl, phenylhexyl, and more preferably a straight-chain or branched A chain alkyl group is directly bonded to boron, and a linear alkyl group is more preferably directly bonded to boron.
作為W的具體結構,具體而言,例示下式(4)示出的結構,但不限定於此。 As a specific structure of W, specifically, the structure shown by following formula (4) is illustrated, but it is not limited to this.
【化4】
上述式(2)或者式(3)表示的W可以通過各種方法來合成,上述式 (2)表示的W例如可以以下述反應式(5)或者下述反應式(6)的途徑來合成。 W represented by the above formula (2) or (3) can be synthesized by various methods, and W represented by the above formula (2) can be synthesized by, for example, the following reaction formula (5) or the following reaction formula (6).
(式(5)中的R1~R4與化學式(2)相同,R5表示鹵素。) (R 1 to R 4 in formula (5) are the same as those in chemical formula (2), and R 5 represents halogen.)
(式(6)中的R1~R4與化學式(2)相同,R5表示鹵素。) (R 1 to R 4 in formula (6) are the same as those in chemical formula (2), and R 5 represents halogen.)
在以惰性氣體取代的反應容器稱量化合物WA-1或者WB-1、反應溶劑,冷卻後,加入鹼,攪拌數時間後,添加取代硼烷並進行攪拌。反應結束後,進行提純步驟,得到導入有硼取代基的WA-2或者WB-2。 The compound WA-1 or WB-1 and the reaction solvent are weighed in a reaction container substituted with an inert gas, and after cooling, a base is added, and after stirring for several hours, a substituted borane is added and stirred. After the reaction is completed, a purification step is performed to obtain WA-2 or WB-2 into which a boron substituent is introduced.
所述反應容器沒有特別限定,可以使用玻璃制或特氟龍(注冊商標)制等。 The reaction container is not particularly limited, and glass, Teflon (registered trademark), or the like can be used.
作為所述反應溶劑沒有特別限定,只要是能夠進行反應的溶劑即可, 可列舉四氫呋喃、叔丁基甲醚、乙腈、苯酚、苯、甲苯等。 The reaction solvent is not particularly limited as long as it is a solvent capable of reacting, and examples thereof include tetrahydrofuran, t-butyl methyl ether, acetonitrile, phenol, benzene, toluene, and the like.
所述惰性氣體可列舉氮、氬、氦等。 Examples of the inert gas include nitrogen, argon, and helium.
所述攪拌方法沒有特別限定,可使用攪拌器(Stirrer),也可以使用震盪機。 The stirring method is not particularly limited, and a stirrer or a shaker may be used.
所述提純步驟只要是能夠使物件物分離即可,可使用公知的方法,具體而言,可列舉分液提取、由柱層析法的分離、再結晶等方法,也可以將這些方法組合進行分離提純。 The purification step may be any method as long as the objects can be separated, and known methods may be used. Specifically, methods such as liquid separation extraction, separation by column chromatography, and recrystallization may be used. These methods may be combined. Separation and purification.
作為所述鹼沒有特別限定,只要是能夠進行B-N交聯反應的鹼即可,可列舉烷基鋰等鹼,具體而言,可列舉甲基鋰、正丁基鋰、仲丁基鋰、叔丁基鋰等。 The base is not particularly limited as long as it is a base capable of undergoing a BN cross-linking reaction. Examples thereof include bases such as alkyllithium, and specifically, methyllithium, n-butyllithium, sec-butyllithium, and tertiary Butyl lithium and the like.
添加所述鹼時的冷卻溫度為-100℃~-50℃,優選為90℃~-70℃。該溫度具體而言例如為-100、-90、-80、-70、-60或者50℃,也可以是在此例示的任意2個數值之間的範圍內。 The cooling temperature when the alkali is added is -100 ° C to -50 ° C, and preferably 90 ° C to -70 ° C. Specifically, the temperature is, for example, -100, -90, -80, -70, -60, or 50 ° C, and may be within a range between any two values exemplified herein.
添加所述鹼之後的幾個小時的攪拌沒有特別限定、例如為1~6小時,優選為1~4小時。該時間具體而言例如為1、2、3、4、5或者6小時,也可以是在此例示的任意2個數值之間的範圍內。 The stirring for several hours after the base is added is not particularly limited, and it is, for example, 1 to 6 hours, and preferably 1 to 4 hours. Specifically, the time is, for example, 1, 2, 3, 4, 5, or 6 hours, and may be within a range between any two values exemplified herein.
作為所述取代硼烷,只要是具有能夠在本發明中使用的取代基R1~R4,且能夠進行B-N交聯反應的硼烷,則沒有特別限定。 The substituted borane is not particularly limited as long as it has a substituent R 1 to R 4 that can be used in the present invention and can perform a BN crosslinking reaction.
添加所述硼烷之後的攪拌時間沒有特別限定、例如為1~24小時,優選為8~24小時。該時間具體而言例如為1、2、3、4、5、6、7、8、9、10、11、12、15、18、21或者24小時,也可以是在此例示的任意2個數值之間的範圍內。 The stirring time after the borane is added is not particularly limited, and is, for example, 1 to 24 hours, and preferably 8 to 24 hours. Specifically, the time is, for example, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 15, 18, 21, or 24 hours, and may be any two of the examples illustrated here. The range between values.
添加所述硼烷之後的攪拌溫度為-78℃~25℃,優選為0℃~25℃。該溫度具體而言例如為0、5、10、15、20或者、25℃,也可以是在此例示的任意2個數值之間的範圍內。 The stirring temperature after adding the borane is -78 ° C to 25 ° C, and preferably 0 ° C to 25 ° C. Specifically, the temperature is, for example, 0, 5, 10, 15, 20, or 25 ° C, and may be within a range between any two values exemplified herein.
另外,在B-N交聯反應中,將三溴化硼用於硼烷,並使BBr2作為交聯物,之後,可以使用如烷基溴化鎂的格氏試劑(Grignard reagent)進行格氏反應來導入取代基R1~R4。 In addition, in the BN cross-linking reaction, boron tribromide is used for borane, and BBr 2 is used as a cross-linked product, and then a Grignard reaction can be performed using a Grignard reagent such as an alkyl magnesium bromide. To introduce substituents R 1 to R 4 .
上述式(1)中的π表示具有共軛結構的2價取代基,優選以下式(7)表示。 Π in the formula (1) represents a divalent substituent having a conjugated structure, and is preferably represented by the following formula (7).
這裏,V1以及V2可以相同,也可以不同,是具有-CR6=CR6-、-C≡C-、2~40個碳原子的2價芳香環或者雜環,該基團是無取代或被1個以上的基團R6取代,A以及B可以相同,也可以不同,表示0~2的整數。 Here, V 1 and V 2 may be the same or different, and are divalent aromatic rings or heterocyclic rings having -CR 6 = CR 6- , -C≡C-, and 2 to 40 carbon atoms. Substituted or substituted by one or more groups R 6 , A and B may be the same or different, and represent an integer of 0 to 2.
R6表示H、鹵素、氰基、或者碳原子數為1~40的直鏈或者支鏈的烷基、烷氧基、烷硫基。 R 6 represents H, halogen, cyano, or a linear or branched alkyl, alkoxy, or alkylthio group having 1 to 40 carbon atoms.
更優選與W鍵合的部位為-CH=CH-、-C≡C-、或者、5元環。這是因為,在這些的情況下,與鍵合的W的立體排斥較少,容易形成連續的平面結構,提高移動度。具體而言,例示下式(8)示出的結構,但不限定於此。 More preferably, the site bonded to W is -CH = CH-, -C≡C-, or a 5-membered ring. This is because, in these cases, there is less steric repulsion with the bonded W, and it is easy to form a continuous planar structure, which improves mobility. Specifically, although the structure shown by following formula (8) is illustrated, it is not limited to this.
【化8】
本發明的含硼高分子化合物只要是在高分子化合物中含有共聚物即可,該共聚物含有在所述化學式(1)中示出的結構,但是為了使分子鏈之間的相互作用更強,優選含有所述化學式(1)中的m為1的,W和π交替配置的交替共聚物。 The boron-containing polymer compound of the present invention only needs to contain a copolymer in the polymer compound, and the copolymer contains the structure shown in the chemical formula (1), but in order to make the interaction between the molecular chains stronger It is preferable to include an alternating copolymer in which m in the chemical formula (1) is 1, and W and π are alternately arranged.
本發明的含硼高分子化合物的重均分子量(重量平均分子量,Mw)為 以凝膠滲透色譜法(以下稱為「GPC」。)測定的聚苯乙烯換算的值,通常為2×104~2×108。從移動度、溶解性以及成膜性的平衡的觀點,優選高分子化合物的重均分子量為2×104~1×106,更優選為3×104~5×105。 The weight average molecular weight (weight average molecular weight, Mw) of the boron-containing polymer compound of the present invention is a polystyrene-equivalent value measured by gel permeation chromatography (hereinafter referred to as "GPC"), and is usually 2 × 10 4 ~ 2 × 10 8 . From the viewpoint of the balance of mobility, solubility, and film-forming property, the weight average molecular weight of the polymer compound is preferably 2 × 10 4 to 1 × 10 6 , and more preferably 3 × 10 4 to 5 × 10 5 .
作為包含上述式(1)的含硼高分子化合物的聚合方法,没有特別限定,可利用鈴木偶聯(Suzuki Coupling)、施蒂勒偶聯(Stille Coupling)、烏爾曼(Ullmann)反應、格拉澤反應(Glaser Reaction)、Heck反應、根岸偶聯、園頭偶聯、熊田偶聯等,從合成容易程度或者能够使用的單體的限制少的觀點,優選铃木偶聯或施蒂勒偶聯。 The polymerization method of the boron-containing polymer compound containing the above formula (1) is not particularly limited, and Suzuki Coupling, Stille Coupling, Ullmann reaction, Gera Glaser Reaction, Heck reaction, Negishi coupling, round head coupling, Kumagata coupling, etc. From the viewpoint of ease of synthesis or less restrictions on the monomers that can be used, Suzuki coupling or Stiller coupling is preferred .
作為由鈴木偶聯進行聚合的方法,通常可以列舉將鍵合有硼酸或者硼酸酯的W和/或π、被鹵化地W和/或π作為原料,在鈀催化劑以及鹼的環境下進行反應而聚合的方法,優選在氬氣、氮其等惰性氣氛中,在催化劑不去失活性的反應系中進行。優選例如被氬其或氮氣等充分取代的系中進行。 As a method for polymerizing by Suzuki coupling, generally, W and / or π to which boric acid or a boronic acid ester is bonded, and W and / or π to be halogenated are used as raw materials, and the reaction is performed in an environment of a palladium catalyst and a base. The polymerization method is preferably performed in an inert atmosphere such as argon or nitrogen in a reaction system in which the catalyst does not lose activity. For example, it is preferably performed in a system sufficiently substituted with argon or nitrogen.
作為由施蒂勒偶聯進行聚合的方法,通常可列舉將鍵合有有機錫的W和/或π、被鹵化地W和/或π作為原料,在鈀催化劑的環境下進行反應而聚合的方法,優選在氬氣、氮其等惰性氣氛中,在催化劑不失去活性的反應系中進行。優選例如被氬其或氮氣等充分取代的系中進行。 As a method for polymerizing by Stiller coupling, there are generally mentioned those using W and / or π to which organotin is bonded, and W and / or π to be halogenated as raw materials, and reacted and polymerized in an environment of a palladium catalyst. The method is preferably performed in an inert atmosphere such as argon or nitrogen in a reaction system in which the catalyst does not lose activity. For example, it is preferably performed in a system sufficiently substituted with argon or nitrogen.
本發明的含硼高分子化合物的用途沒有限定,可作為P型有機半導體、 n型有機半導體、二極型半導體使用,也可以適用於有機薄膜太陽能電池、有機EL、有機電晶體、有機儲存器、電子紙、熱電轉換元件、感應器等用途。 The application of the boron-containing polymer compound of the present invention is not limited, and it can be used as a P-type organic semiconductor, an n-type organic semiconductor, or a bipolar semiconductor, and can also be applied to an organic thin-film solar cell, an organic EL, an organic transistor, and an organic memory. , Electronic paper, thermoelectric conversion elements, sensors, etc.
以下的實施例中,高分子化合物(聚合體)的重均分子量是利用高速GPC裝置(ToSoh株式會社製,型號HLC-8320GPC ECcOSEC)、紫外吸收檢測器(ToSoh株式會社製,型號UV-8320)來測定,由聚苯乙烯換算來計算。測定溶劑使用三氯甲烷,GPC柱使用TSKguardcolumn HHR-H×1+TSKgeL GMHHR-H×1(皆為ToSoh株式會社製)。 In the following examples, the weight average molecular weight of the polymer compound (polymer) was determined using a high-speed GPC device (manufactured by ToSoh Corporation, model HLC-8320GPC ECcOSEC) and an ultraviolet absorption detector (manufactured by ToSoh Corporation, model UV-8320). It is measured and calculated by polystyrene conversion. Trichloromethane was used as the measurement solvent, and TSKguardcolumn HHR-H × 1 + TSKgeL GMHHR-H × 1 (both manufactured by ToSoh Corporation) was used for the GPC column.
使含硼高分子化合物為0.5重量%,並與三氯甲烷進行混合,在20℃下進行15分鐘的攪拌。使完全溶解的為○,有溶解殘留物的為×。 The boron-containing polymer compound was 0.5% by weight, mixed with chloroform, and stirred at 20 ° C for 15 minutes. The completely dissolved was ○, and the dissolved residue was ×.
將含硼高分子化合物(P1)以5mg/g的濃度溶解於三氯甲烷的溶液滴到帶摻氟氧化錫膜的玻璃的導電膜上,將在室溫、大氣下乾燥的作為測定樣品,利用電離電勢測定裝置(PYS-201,住友重機械工業制)進行測定。 A solution of boron-containing polymer compound (P1) dissolved in chloroform at a concentration of 5 mg / g was dropped on a conductive film of glass with a fluorine-doped tin oxide film, and a sample dried at room temperature and air was used as a measurement sample. The measurement was performed using an ionization potential measuring device (PYS-201, manufactured by Sumitomo Heavy Industries, Ltd.).
將含硼高分子化合物溶解於三氯甲烷的溶液,利用紫外可見近紅外分光 光度計(JASCO,V-670)測定紫外可見光吸收光譜,將在光譜的長波長側的吸収端的波長換算為能量的值作為Eg。並且,減去電離電勢(HOMO)和Eg的值,換算出LUMO。 A solution in which a polymer compound containing boron was dissolved in chloroform was used to measure an ultraviolet-visible absorption spectrum using an ultraviolet-visible near-infrared spectrophotometer (JASCO, V-670). Value as Eg. Then, the values of the ionization potential (HOMO) and Eg were subtracted to convert the LUMO.
移動度的測定是根據場效應電晶體(TFT)的評價來進行。 The measurement of the mobility is performed based on the evaluation of a field effect transistor (TFT).
在形成有厚度500Å的Cr柵電極的玻璃基板上,利用ZEOCOAT ES2110-10(日本ZEON株式會社製)旋塗法(500rPm/3Sec.以及2000rPm/15Sec.)進行塗布,以90℃2min.進行加熱之後,再以150℃1hr.進行加熱,形成柵極絕緣膜。接著,將含硼高分子化合物(P1)溶液(0.5wt%、氯苯溶劑)以旋塗法(1000rPm、60Sec.)塗布於基板上,在氮氣環境下,在烤盤(hot plate)上以80℃30min.進行退貨處理,形成有機半導體薄膜。接著,使用金屬掩模將金真空蒸鍍為50nm的膜厚,形成具有50μm的溝道長度的源電極、漏電極,製作了底柵頂接觸(Bottom gate.Top contact)型的有機薄膜電晶體。 On a glass substrate on which a Cr gate electrode having a thickness of 500 Å was formed, coating was performed using a ZEOCOAT ES2110-10 (manufactured by ZEON, Japan) spin coating method (500rPm / 3Sec. And 2000rPm / 15Sec.) At 90 ° C for 2 min. After heating, it was heated at 150 ° C for 1hr. Heating is performed to form a gate insulating film. Next, a boron-containing polymer compound (P1) solution (0.5 wt%, chlorobenzene solvent) was applied on a substrate by a spin coating method (1000 rPm, 60 Sec.), And on a hot plate under a nitrogen atmosphere. At 80 ° C for 30min. Return processing is performed to form an organic semiconductor film. Next, gold was vacuum-evaporated to a film thickness of 50 nm using a metal mask to form a source electrode and a drain electrode having a channel length of 50 μm, and a bottom gate top contact organic thin film transistor was fabricated. .
將如此作制的有機電晶體在大氣環境下測定電流-電壓(I-V)特性,從飽和區域求出電荷移動度。 The thus-produced organic transistor was measured for current-voltage (I-V) characteristics under an atmospheric environment, and the degree of charge mobility was determined from a saturated region.
在氮取代的500mL舒倫克管投入2,5-二氨基-1,4-苯二硫醇二鹽 酸鹽4.40g(17.9mmmol)和聚磷酸50g,100℃下攪拌3小時。在此溶液中加入3-溴噻吩2-羧酸7.80g(37.7mmol)的環丁碸(47g)溶液,並在100℃下過熱攪拌5小時。使反應溶液降到室溫,添加水之後,進行過濾回收固體。通過用二甲基甲醯胺洗淨得到的固體得到了作為黃色固體的2,5-雙(3-溴-2-噻吩)苯並雙噻唑(A1-1)8.03g(15.6mmol),且收率為87%。 Into a 500 mL Schlenk tube substituted with nitrogen, 4.40 g (17.9 mmmol) of 2,5-diamino-1,4-benzenedithiol dihydrochloride and 50 g of polyphosphoric acid were put, and stirred at 100 ° C for 3 hours. To this solution was added a solution of 7.80 g (37.7 mmol) of 3-bromothiophene 2-carboxylic acid (47 g) of cyclobutane, and the mixture was stirred with superheating at 100 ° C for 5 hours. The reaction solution was cooled to room temperature, and after adding water, the solid was collected by filtration. The obtained solid was washed with dimethylformamide to obtain 2,5-bis (3-bromo-2-thiophene) benzobisthiazole (A1-1) as a yellow solid. 8.03 g (15.6 mmol) And the yield is 87%.
在氮取代的500mL舒倫克管中投入2,5-雙(3-溴-2-噻吩)苯並雙噻唑(化合物A1-1)1.00g(1.94mmol)、脫水四氫呋喃75mL,並在-78℃下滴入叔丁基鋰1.6M溶液5.1mL(8.15mmol),直接攪拌1小時。在該溶液中,在-78℃下滴入後述的三(十六烷基)硼烷0.91M溶液42.7mL(3.89mmol)。 In a 500 mL Schlenk tube substituted with nitrogen, 1.00 g (1.94 mmol) of 2,5-bis (3-bromo-2-thiophene) benzobisthiazole (compound A1-1) and 75 mL of dehydrated tetrahydrofuran were charged. 5.1 mL (8.15 mmol) of tert-butyllithium 1.6M solution was added dropwise at -78 ° C, and the mixture was directly stirred for 1 hour. To this solution, 42.7 mL (3.89 mmol) of a tris (hexadecyl) borane 0.91M solution described later was added dropwise at -78 ° C.
這裏,三(十六烷基)硼烷溶液是通過以下步驟來調整,即在氮取代的舒倫克管中投入1-十六烯3.3mL(11.6mmol)、脫水四氫呋喃35mL,在0℃下滴入硼烷-四氫呋喃複合物0.9M溶液4.3mL(3.88mmol),直接攪拌1小時。 Here, the tris (hexadecyl) borane solution was adjusted by the following steps: put 1-hexadecene 3.3 mL (11.6 mmol), 35 mL of dehydrated tetrahydrofuran in a nitrogen-substituted Schlenk tube, 4.3 mL (3.88 mmol) of a 0.9M solution of borane-tetrahydrofuran complex was added dropwise at ℃, and the mixture was directly stirred for 1 hour.
使反應溶液慢慢回到室溫,在室溫攪拌3小時。濃縮反應液之後,通過作為展開溶劑使用了己烷的柱層析法,得到了1.09g(0.85mmol)的作為黃色固體的含硼化合物(A1),且收率為44%。 The reaction solution was slowly returned to room temperature and stirred at room temperature for 3 hours. After the reaction solution was concentrated, by column chromatography using hexane as a developing solvent, 1.09 g (0.85 mmol) of the boron-containing compound (A1) was obtained as a yellow solid, and the yield was 44%.
在氮取代的100mL舒伦克管中,0℃下滴入含硼化合物(化合物A1)0.40g(0.31mmol)、脫水四氢呋喃20mL、四甲基呱啶基氯化鎂‧氯化锂1.0M溶液1.9mL(1.90mmol),直接搅拌1小时。0℃下,在該溶液中加入三甲基氯化錫0.38g(1.90mmol),在相同溫度下攪拌1小時。接著,使反應溶液回到室溫,在室溫下攪拌1小時。濃縮反應液之後,通過作為展開溶劑使用了三氯甲烷的柱層析法,得到了0.39g(0.24mmol)的作為淡橙色固體的含硼化合物(A1-2),且收率為79%。 In a 100 mL Schlenk tube substituted with nitrogen, 0.4 g (0.31 mmol) of a boron-containing compound (compound A1), 20 mL of dehydrated tetrahydrofuran, tetramethylpyridinylmagnesium chloride, lithium chloride 1.0M were added dropwise at 0 ° C. The solution was 1.9 mL (1.90 mmol) and directly stirred for 1 hour. To this solution, 0.38 g (1.90 mmol) of trimethyltin chloride was added to the solution, and the mixture was stirred at the same temperature for 1 hour. Next, the reaction solution was returned to room temperature and stirred at room temperature for 1 hour. After the reaction solution was concentrated, column chromatography using chloroform as a developing solvent yielded 0.39 g (0.24 mmol) of a boron-containing compound (A1-2) as a pale orange solid with a yield of 79. %.
含硼化合物A1的合成法中,作為原料使用二均三甲苯基氟硼烷來代替三(十六烷基)硼烷,得到了0.463g(0.543mmol)的作為黃色固體的A2,且收率為28%。 In the method for synthesizing the boron-containing compound A1, dimesytrilylfluoroborane was used as a raw material instead of tris (hexadecyl) borane, and 0.463 g (0.543 mmol) of A2 was obtained as a yellow solid, and The yield was 28%.
硼化合物A2-2中,由於A2為不容,因此無法合成。 The boron compound A2-2 cannot be synthesized because A2 is intolerant.
在氮取代的20mL舒倫克管中投入0.10g(0.0624mmol)的含硼化合物(A1-2)、20.2mg(0.0624mmol)的5,5’-二溴2,2’-雙噻吩(東京化成工業)、2.9mg(5mol%)的三(二亞苄基丙酮)二鈀、1.9mg(10mol%)的三(鄰甲苯基)膦、5mL的氯苯,以8小時加熱回流條件進行了攪拌。接著,加入2-三丁基甲錫烷基噻吩100mg(0.309mmol),進行了30分鐘的反應。回到室溫,加入甲醇,通過過濾回收固體,以使用了甲醇以及己烷的索氏提取的方式去除了低分子物。最後,通過使用三氯甲烷的索氏提取,濃縮了提取的三氯甲烷,並加入甲醇,使固體析出,進行過濾而回收,得到了作為濃紫色固體的含硼高分子化合物(P1)61mg。將得到的高分子化合物的重均分子量以GPC法進行測定,結果為63000。測定的HOMO的值為-5.7eV,Eg的值為2.0eV,由這些換算的LUMO為-3.7eV。並且,進行了可溶性試驗,結果三氯甲烷充分溶解。進行了根據電晶體的評價,結果為1.8×10-3cm2/VS,On/Off值為106。將評價結果示於表1。 In a nitrogen-substituted 20 mL Schlenk tube, 0.1 g (0.024 mmol) of the boron-containing compound (A1-2) and 20.2 mg (0.024 mmol) of 5,5'-dibromo 2,2'- Bithiophene (Tokyo Chemical Industry), 2.9 mg (5 mol%) of tris (dibenzylideneacetone) dipalladium, 1.9 mg (10 mol%) of tris (o-tolyl) phosphine, 5 mL of chlorobenzene, 8 The mixture was stirred under heating and refluxing for 1 hour. Next, 100 mg (0.309 mmol) of 2-tributylstannylthiophene was added, and the reaction was performed for 30 minutes. After returning to room temperature, methanol was added, and solids were recovered by filtration, and low-molecular substances were removed by Soxhlet extraction using methanol and hexane. Finally, by Soxhlet extraction using chloroform, the extracted chloroform was concentrated, and methanol was added to precipitate a solid, followed by filtration and recovery, to obtain 61 mg of a boron-containing polymer compound (P1) as a thick purple solid. The weight average molecular weight of the obtained polymer compound was measured by GPC method, and it was 63,000. The measured HOMO value was -5.7 eV, the Eg value was 2.0 eV, and the LUMO converted from these was -3.7 eV. In addition, a solubility test was performed, and as a result, chloroform was sufficiently dissolved. Evaluation based on the transistor was performed, and the result was 1.8 × 10 -3 cm 2 / VS, and the On / Off value was 10 6 . The evaluation results are shown in Table 1.
含硼高分子化合物(P1)的合成方法中,使用5,5’’-二溴-2,2’:5’,2’’-三噻吩(東京化成工業)來代替5,5’-二溴-2,2’-雙 噻吩(東京化成工業),得到了作為濃紫色固體的含硼高分子化合物(P2)63mg。將評價結果示於表1。 In the synthesis method of the boron-containing polymer compound (P1), 5,5 ''-dibromo-2,2 ': 5', 2 ''-trithiophene (Tokyo Chemical Industry) is used instead of 5,5'-di Bromine-2,2'-bisthiophene (Tokyo Chemical Industry), and 63 mg of a boron-containing polymer compound (P2) as a thick purple solid was obtained. The evaluation results are shown in Table 1.
含硼高分子化合物(P1)的合成方法中,使用4,7-雙(5-溴-2-噻吩)-2,1,3-苯並噻二唑來代替5,5’-二溴-2,2’-雙噻吩(東京化成工業),得到了作為藍色固體的含硼高分子化合物(P3)52mg。將評價結果示於表1。 In the synthesis method of the boron-containing polymer compound (P1), 4,7-bis (5-bromo-2-thiophene) -2,1,3-benzothiadiazole is used instead of 5,5'-dibromo- 2,2'-bisthiophene (Tokyo Chemical Industry), 52 mg of a boron-containing polymer compound (P3) was obtained as a blue solid. The evaluation results are shown in Table 1.
含硼高分子化合物(P1)的合成方法中,使用2,6-二溴二噻吩並 〔3,2-B:2‘,3’-d]噻吩來代替5,5’-二溴-2,2’-雙噻吩(東京化成工業),得到了作為濃紫色固體的含硼化合物(P4)58mg。將評價結果示於表1。 In the method for synthesizing the boron-containing polymer compound (P1), 2,6-dibromodithieno [3,2-B: 2 ', 3'-d] thiophene is used instead of 5,5'-dibromo-2 , 2'-bisthiophene (Tokyo Chemical Industry), 58 mg of a boron-containing compound (P4) was obtained as a thick purple solid. The evaluation results are shown in Table 1.
含硼高分子化合物(P1)的合成方法中,使用下述化合物B來代替5,5’-二溴-2,2’-二噻吩(東京化成工業),得到了作為綠色固體的含硼高分子化合物(P5)81mg。將評價結果示於表1。 In the method for synthesizing a boron-containing polymer compound (P1), the following compound B was used instead of 5,5'-dibromo-2,2'-dithiophene (Tokyo Chemical Industry), and a boron-containing compound as a green solid was obtained. 81mg of molecular compound (P5). The evaluation results are shown in Table 1.
應予說明,參考J.Mater.Chem.C,2014,2,3457以及J.Mater.Chem.C,2014,2,6376合成化合物B1。 Should be explained, refer to J. Mater. Chem. C, 2014, 2, 3457 and J. Mater. Chem. C, 2014, 2, 6376 Synthesis of compound B1.
如上所述,具有A2的聚合体由於A2相對於氯苯没有溶解性,無法合 成作為聚合前體的A2-2,因此無法評價。將結果示於表1。 As described above, since A2 has no solubility with respect to chlorobenzene, a polymer having A2 cannot be synthesized as A2-2 as a polymerization precursor, and therefore cannot be evaluated. The results are shown in Table 1.
以P3HT(綜研化學製,VERAZOL HT,重均分子量47,000)來代替實施例1中的含硼高分子化合物(P1)而使用,將晶體管製作中的退貨條件改變為150℃30min.之外,以同樣的方法進行評價。將結果示於表1。 P3HT (Verazol HT, weight average molecular weight 47,000, manufactured by Kenken Chemical Co., Ltd.) was used in place of the boron-containing polymer compound (P1) in Example 1, and the return condition during transistor production was changed to 150 ° C for 30 minutes. Other than that, evaluation was performed by the same method. The results are shown in Table 1.
【表1】 【Table 1】
相對於比較例,實施例1~5呈現出向所有三氯甲烷的高的溶解性。並且,關於半導體特性,呈現出P型半導體特性,10-4cm2/VS以上的移動度、104以上的On/Off值。另一方面,比較例1中不能聚合,比較例2相對於三氯甲烷具有溶解殘留物,得到了高的溶解性。並且,關於半導體特性,由於電離電勢低,大氣穩定性也第,On/Off值成為低的值。 With respect to the comparative examples, Examples 1 to 5 exhibited high solubility in all chloroform. In addition, the semiconductor characteristics exhibit P-type semiconductor characteristics, a mobility of 10 -4 cm 2 / VS or more, and an On / Off value of 10 4 or more. On the other hand, in Comparative Example 1, polymerization was not possible, and Comparative Example 2 had a dissolved residue with respect to chloroform, and obtained high solubility. In addition, regarding semiconductor characteristics, since the ionization potential is low, the atmospheric stability is also the highest, and the On / Off value becomes a low value.
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