TW201811121A - Electrostatic discharge protection apparatus and electrostatic discharge protection method thereof - Google Patents
Electrostatic discharge protection apparatus and electrostatic discharge protection method thereof Download PDFInfo
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- H—ELECTRICITY
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- H05K1/00—Printed circuits
- H05K1/02—Details
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- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0257—Overvoltage protection
- H05K1/0259—Electrostatic discharge [ESD] protection
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Abstract
Description
本發明是有關於一種靜電放電保護裝置,且特別是有關於一種利用軟性電路版的走線來建構的靜電放電保護裝置。The invention relates to an electrostatic discharge protection device, and more particularly to an electrostatic discharge protection device constructed by using a flexible circuit board wiring.
在顯示裝置得技術領域中,為確保顯示裝置的可靠度,提升顯示裝置的靜電放電防護的能力是很重要的課題。在習知的技術領域中,常透過在晶片上進行多種不同的設計,藉以提升晶片所能進行的靜電放電電流的宣洩能力,以達到提升顯示裝置整體的靜電放電防護的等級。然而,這樣的作法常需要晶片提供足夠大的晶片面積來進行靜電放電電路的設置,造成晶片面積的增加。而在顯示驅動晶片中,由於顯示驅動晶片需要提供的輸入輸出通道數量甚多,因此,在進行高效能的靜電放電電路的設置時,會佔去大量的晶片面積,而使晶片的尺寸(例如高度)大幅增加,而使成本提高,降低價格競爭力。In the technical field of display devices, in order to ensure the reliability of the display device, it is an important subject to improve the electrostatic discharge protection capability of the display device. In the conventional technical field, a variety of different designs are often performed on a chip to improve the discharge capability of the electrostatic discharge current that the chip can perform, so as to improve the level of electrostatic discharge protection of the entire display device. However, such a method often requires the wafer to provide a sufficiently large wafer area to set the electrostatic discharge circuit, resulting in an increase in the wafer area. In the display driving chip, since the display driving chip needs to provide a large number of input and output channels, when setting up a high-performance electrostatic discharge circuit, a large amount of chip area is occupied, and the size of the chip (such as (Height) has increased significantly, increasing costs and reducing price competitiveness.
本發明提供一種靜電放電保護裝置靜電放電保護方法,有效提升靜電放電防護等級。The invention provides an electrostatic discharge protection method for an electrostatic discharge protection device, which effectively improves the electrostatic discharge protection level.
本發明的靜電放電保護裝置包括軟性電路板、晶片以及多數條第一傳輸導線。軟性電路板具有至少一第一輸入輸出端子以及至少一第二輸入輸出端子分別連接至電路板以及玻璃基板。晶片配置在軟性電路板上,晶片具有至少一輸入輸出焊墊以及一虛設焊墊,以及分別耦接至輸入輸出焊墊以及虛設焊墊的多數個靜電放電電路。第一傳輸導線形成在軟性電路板上,使第一輸入輸出端子、虛設焊墊以及輸入輸出焊墊依序串聯耦接。The electrostatic discharge protection device of the present invention includes a flexible circuit board, a chip, and a plurality of first transmission wires. The flexible circuit board has at least one first input-output terminal and at least one second input-output terminal connected to the circuit board and the glass substrate, respectively. The chip is arranged on a flexible circuit board. The chip has at least one input-output pad and a dummy pad, and a plurality of electrostatic discharge circuits respectively coupled to the input-output pad and the dummy pad. The first transmission wire is formed on the flexible circuit board, and the first input-output terminal, the dummy pad and the input-output pad are coupled in series in sequence.
本發明的靜電放電保護方法包括:使晶片配置在軟性電路板上,其中軟性電路板具有至少一第一輸入輸出端子以及至少一第二輸入輸出端子分別連接至電路板以及玻璃基板,晶片具有至少一輸入輸出焊墊以及虛設焊墊;在晶片上設置分別耦接至輸入輸出焊墊以及虛設焊墊的多數個靜電放電電路;以及,在軟性電路板上形成多數條第一導線,使第一輸入輸出端子、虛設焊墊以及輸入輸出焊墊依序串聯耦接。The electrostatic discharge protection method of the present invention comprises: disposing a wafer on a flexible circuit board, wherein the flexible circuit board has at least one first input-output terminal and at least one second input-output terminal connected to the circuit board and the glass substrate, respectively, and the wafer has at least An input-output pad and a dummy pad; a plurality of electrostatic discharge circuits respectively coupled to the input-output pad and the dummy pad are provided on the chip; and a plurality of first wires are formed on the flexible circuit board to make the first The input-output terminal, the dummy pad and the input-output pad are coupled in series in order.
基於上述,本發明透過在承載晶片的軟性電路板上形成多條傳輸導線,以使耦接電路板的第一輸入輸出端子、晶片上的虛設焊墊以及輸入輸出焊墊依序串聯耦接。在當靜電放電現象發生時,靜電放電電流可透過軟性電路板上的傳輸導線先流至虛設焊墊以透過連接虛設焊墊的靜電放電保護電路進行宣洩。如此,在不變更晶片的尺寸的前提下,可提升靜電放電防護的等級。Based on the above, the present invention forms a plurality of transmission wires on a flexible circuit board carrying a chip, so that the first input and output terminals coupled to the circuit board, the dummy pads on the chip, and the input and output pads are sequentially coupled in series. When the electrostatic discharge phenomenon occurs, the electrostatic discharge current can first flow to the dummy pad through the transmission wire on the flexible circuit board to be released through the electrostatic discharge protection circuit connected to the dummy pad. In this way, the level of electrostatic discharge protection can be improved without changing the size of the wafer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
請參照圖1,圖1繪示本發明一實施例的靜電放電保護裝置的示意圖。靜電放電保護裝置100包括晶片110、軟性電路板120以及形成在軟性電路板120上的多個傳輸導線WIR1~WIR3。晶片110承載在軟性電路板120上,而在本實施例中,晶片可以是顯示驅動晶片或其他種類的晶片,而軟性電路板120則可以是晶粒軟模封裝(chip on film, COF)的軟性電路基板。Please refer to FIG. 1, which is a schematic diagram of an electrostatic discharge protection device according to an embodiment of the present invention. The ESD protection device 100 includes a chip 110, a flexible circuit board 120, and a plurality of transmission wires WIR1 to WIR3 formed on the flexible circuit board 120. The chip 110 is carried on a flexible circuit board 120. In this embodiment, the chip may be a display driving chip or other types of chips, and the flexible circuit board 120 may be a chip on film (COF). Flexible circuit board.
在軟性電路板120上具有多個輸入輸出端子COFVS1-COFVS2分別耦接至電路板101以及玻璃基板102,其中,電路板101可以是印刷電路板,而輸入輸出端子COFVS1作為晶片110以及電路板101上的電路元件進行信號傳輸的媒介。玻璃基板102可以是顯示面板,輸入輸出端子COFVS2則作為晶片110傳輸驅動信號至玻璃基板102的媒介。電路板101上的電路元件進行信號傳輸的媒介。輸入輸出端子COFVS1-COFVS2的數量沒有一定的限制,圖1中的繪示僅只是一個說明範例,輸入輸出端子COFVS1-COFVS2的數量可以依據需求進行設置。晶片110上則具有輸入輸出焊墊VS1以及虛設焊墊DUM1。其中,晶片110上的輸入輸出焊墊的數量沒有限定,圖示中繪示的一個輸入輸出焊墊VS1僅只是說明用的範例,事實上,晶片110通常具有多個的輸入輸出焊墊。The flexible circuit board 120 has a plurality of input and output terminals COFVS1-COFVS2 respectively coupled to the circuit board 101 and the glass substrate 102. The circuit board 101 may be a printed circuit board, and the input and output terminals COFVS1 are used as the chip 110 and the circuit board 101. Signal transmission medium on the circuit elements. The glass substrate 102 may be a display panel, and the input / output terminal COFVS2 is used as a medium for the chip 110 to transmit the driving signal to the glass substrate 102. A medium for transmitting signals by circuit elements on the circuit board 101. The number of input and output terminals COFVS1-COFVS2 is not limited. The drawing in FIG. 1 is only an illustrative example. The number of input and output terminals COFVS1-COFVS2 can be set according to requirements. The chip 110 has an input / output pad VS1 and a dummy pad DUM1. The number of input / output pads on the chip 110 is not limited, and one input / output pad VS1 shown in the figure is only an illustrative example. In fact, the chip 110 usually has multiple input / output pads.
重點在於,在本實施例中,輸入輸出端子COFVS1與輸入輸出焊墊VS1間的耦接方式,是透過傳輸導線WIR1與虛設焊墊DUM1進行耦接,而虛設焊墊DUM1則透過傳輸導線WIR1來與輸入輸出焊墊VS1相耦接。也就是說,輸入輸出端子COFVS1、虛設焊墊DUM1以及輸入輸出焊墊VS1分別透過傳輸導線WIR1以及WIR2依序串接。其中,傳輸導線WIR1以及WIR2形成於軟性電路板120上。The important point is that in this embodiment, the coupling method between the input / output terminal COFVS1 and the input / output pad VS1 is coupled through the transmission wire WIR1 and the dummy pad DUM1, and the dummy pad DUM1 is connected through the transmission wire WIR1. It is coupled to the input / output pad VS1. That is, the input-output terminal COFVS1, the dummy pad DUM1, and the input-output pad VS1 are connected in series through the transmission wires WIR1 and WIR2, respectively. The transmission wires WIR1 and WIR2 are formed on the flexible circuit board 120.
在另一方面,另一形成於軟性電路板120上的傳輸導線WIR3則耦接輸入輸出端子COFVS2與輸入輸出焊墊VS1間。On the other hand, another transmission wire WIR3 formed on the flexible circuit board 120 is coupled between the input / output terminal COFVS2 and the input / output pad VS1.
值得注意的,晶片110上的輸入輸出焊墊VS1以及虛設焊墊DUM1分別耦接至靜電放電電路ESD1以及ESD2。It is worth noting that the input and output pads VS1 and the dummy pads DUM1 on the chip 110 are respectively coupled to the electrostatic discharge circuits ESD1 and ESD2.
當靜電放電現象發生在輸入輸出端子COFVS1上時,靜電放電電流會先透過傳輸導線WIR1被傳輸至虛設焊墊DUM1,並且,透過與虛設焊墊DUM1耦接的靜電放電電路ESD2進行靜電放電電流的宣洩動作。如此一來,靜電放電電流流至輸入輸出焊墊VS1的能量將會大幅的減小(或甚至為0),而這些殘餘的靜電放電電流則可透過與輸入輸出焊墊VS1耦接的靜電放電電路ESD1進行進一步的靜電放電電流的宣洩動作,並有效達成靜電放電保護的動作,When the electrostatic discharge phenomenon occurs on the input and output terminal COFVS1, the electrostatic discharge current is first transmitted to the dummy pad DUM1 through the transmission wire WIR1, and the electrostatic discharge current is conducted through the electrostatic discharge circuit ESD2 coupled to the dummy pad DUM1. Catharsis. In this way, the energy of the electrostatic discharge current flowing to the input / output pad VS1 will be greatly reduced (or even 0), and these residual electrostatic discharge currents can be passed through the electrostatic discharge coupled to the input / output pad VS1. The circuit ESD1 performs further discharge of the electrostatic discharge current and effectively achieves the action of electrostatic discharge protection.
由上述的說明可以得知,本發明實施例透過虛設焊墊DUM1耦接的靜電放電電路ESD2進行先期的靜電放電電流宣洩,可以有效防止與輸入輸出焊墊VS1連接的晶片110中的核心電路受到靜電放電電流的破壞,而本發明實施例再透過輸入輸出焊墊VS1耦接的靜電放電電路ESD1進行下一步的靜電放電電流宣洩以完成靜電放電電流的宣洩動作,達到靜電放電保護的目標。From the above description, it can be known that the embodiment of the present invention uses the electrostatic discharge circuit ESD2 coupled to the dummy pad DUM1 to perform the prior electrostatic discharge current discharge, which can effectively prevent the core circuit in the chip 110 connected to the input and output pad VS1 from being affected. The electrostatic discharge current is destroyed. In the embodiment of the present invention, the electrostatic discharge circuit ESD1 coupled to the input / output pad VS1 is used to perform the next discharge of the electrostatic discharge current to complete the discharge operation of the electrostatic discharge current, thereby achieving the goal of electrostatic discharge protection.
以下請參照圖2,圖2並繪示本發明另一實施例的靜電放電保護裝置的示意圖。靜電放電保護裝置200包括晶片210、軟性電路板220以及形成在軟性電路板220上的多個傳輸導線WIR1~WIR4。晶片210承載在軟性電路板220上,晶片210並具有輸入輸出焊墊VS1以及虛設焊墊DUM1。軟性電路板220上則具有輸入輸出端子COFVS1以及COFVS2。Please refer to FIG. 2 below, which illustrates a schematic diagram of an electrostatic discharge protection device according to another embodiment of the present invention. The electrostatic discharge protection device 200 includes a chip 210, a flexible circuit board 220, and a plurality of transmission wires WIR1 to WIR4 formed on the flexible circuit board 220. The chip 210 is carried on the flexible circuit board 220. The chip 210 further includes an input / output pad VS1 and a dummy pad DUM1. The flexible circuit board 220 has input and output terminals COFVS1 and COFVS2.
此外,軟性電路板220上形成多條傳輸導線WIR1-WIR4,其中,傳輸導線WIR1耦接至輸入輸出端子COFVS1,並與傳輸導線WIR2及WIR4相耦接。傳輸導線WIR2的另一端耦接至晶片210上的虛設焊墊DUM1,而虛設焊墊DUM1並透過傳輸導線WIR3耦接至晶片210上的輸入輸出焊墊VS1。傳輸導線WIR4的另一端則耦接至輸入輸出端子COFVS2。In addition, a plurality of transmission wires WIR1-WIR4 are formed on the flexible circuit board 220. Among them, the transmission wire WIR1 is coupled to the input / output terminal COFVS1, and is coupled to the transmission wires WIR2 and WIR4. The other end of the transmission wire WIR2 is coupled to the dummy pad DUM1 on the chip 210, and the dummy pad DUM1 is coupled to the input / output pad VS1 on the chip 210 through the transmission wire WIR3. The other end of the transmission wire WIR4 is coupled to the input / output terminal COFVS2.
如此一來,輸入輸出端子COFVS1、虛設焊墊DUM1以及輸入輸出焊墊VS1透過傳輸導線WIR1、WIR2以及WIR3依序串接。而從另一個角度來觀察,輸入輸出端子COFVS2、虛設焊墊DUM1以及輸入輸出焊墊VS1則透過傳輸導線WIR4、WIR2以及WIR3依序串接。In this way, the input and output terminals COFVS1, the dummy pad DUM1, and the input and output pads VS1 are connected in series through the transmission wires WIR1, WIR2, and WIR3. From another perspective, the input and output terminals COFVS2, the dummy pad DUM1, and the input and output pads VS1 are connected in series through the transmission wires WIR4, WIR2, and WIR3.
晶片210分別對應虛設焊墊DUM1以及輸入輸出焊墊VS1配置靜電放電電路ESD2及ESD1,虛設焊墊DUM1以及輸入輸出焊墊VS1分別耦接至靜電放電電路ESD2及ESD1。The chip 210 is respectively configured with electrostatic discharge circuits ESD2 and ESD1 corresponding to the dummy pad DUM1 and the input-output pad VS1, and the dummy pad DUM1 and the input-output pad VS1 are respectively coupled to the electrostatic discharge circuits ESD2 and ESD1.
在本實施例中,當靜電放電現象發生在輸入輸出端子COFVS1上時,對應產生的靜電放電電流可隨著傳輸導線WIR1、WIR2被傳送至虛設焊墊DUM1,並透過與虛設焊墊DUM1耦接的靜電放電電路ESD2進行前期的電流宣洩動作。若靜電放電電路ESD2未能完全宣洩靜電放電電流,殘餘的靜電放電電流可透過傳輸導線WIR3傳送至輸入輸出焊墊VS1並透過靜電放電電路ESD1進行進一步的電流宣洩動作。In this embodiment, when the electrostatic discharge phenomenon occurs on the input and output terminals COFVS1, the corresponding electrostatic discharge current can be transmitted to the dummy pad DUM1 along with the transmission wires WIR1 and WIR2, and is coupled to the dummy pad DUM1 through The electrostatic discharge circuit ESD2 performs a current release operation in the early stage. If the electrostatic discharge circuit ESD2 fails to fully discharge the electrostatic discharge current, the residual electrostatic discharge current can be transmitted to the input / output pad VS1 through the transmission wire WIR3, and further current discharge action is performed through the electrostatic discharge circuit ESD1.
在另一方面,當靜電放電現象發生在輸入輸出端子COFVS2上時,對應產生的靜電放電電流可隨著傳輸導線WIR4、WIR2被傳送至虛設焊墊DUM1,並透過與虛設焊墊DUM1耦接的靜電放電電路ESD2進行前期的電流宣洩動作。若靜電放電電路ESD2未能完全宣洩靜電放電電流,殘餘的靜電放電電流可透過傳輸導線WIR3傳送至輸入輸出焊墊VS1並透過靜電放電電路ESD1進行進一步的電流宣洩動作。On the other hand, when the electrostatic discharge phenomenon occurs on the input and output terminals COFVS2, the corresponding electrostatic discharge current can be transmitted to the dummy pad DUM1 along with the transmission wires WIR4, WIR2, and through the dummy pad DUM1. The electrostatic discharge circuit ESD2 performs a current release operation in the early stage. If the electrostatic discharge circuit ESD2 fails to fully discharge the electrostatic discharge current, the residual electrostatic discharge current can be transmitted to the input / output pad VS1 through the transmission wire WIR3, and further current discharge action is performed through the electrostatic discharge circuit ESD1.
在本實施例中,來自輸入輸出端子COFVS1或COFVS2接可透過虛設焊墊DUM1耦接的靜電放電電路ESD2進行先期的靜電放電電流宣洩,再透過輸入輸出焊墊VS1耦接的靜電放電電路ESD1進行下一步的靜電放電電流宣洩以完成靜電放電電流的宣洩動作,達到靜電放電保護的目標。In this embodiment, the electrostatic discharge circuit ESD2 coupled to the input and output terminals COFVS1 or COFVS2 through the dummy pad DUM1 is used to release the prior electrostatic discharge current, and then conducted through the electrostatic discharge circuit ESD1 coupled to the input and output pad VS1. The next step of discharging the electrostatic discharge current is to complete the discharging action of the electrostatic discharge current and achieve the goal of electrostatic discharge protection.
以下請參照圖3A以及圖3B,圖3A以及圖3B分別繪示本發明不同實施例的靜電放電保護裝置的示意圖。圖3A以及圖3B的實施方式為本案圖1實施例的延伸實施方式。在圖3A中,靜電放電保護裝置300的晶片310上另配置輔助虛設焊墊ADUM1以及耦接至輔助虛設焊墊ADUM1的輔助靜電放電電路AESD1。其中,輔助虛設焊墊ADUM1以及虛設焊墊DUM1間可以透過導線IWIR來形成電性耦接。導線IWIR可形成在晶片310上,導線IWIR可以透過晶片310上用以形成導線的任意材質來建構。Please refer to FIG. 3A and FIG. 3B, FIG. 3A and FIG. 3B are schematic diagrams of electrostatic discharge protection devices according to different embodiments of the present invention, respectively. The implementation of FIG. 3A and FIG. 3B are extended implementations of the embodiment of FIG. 1 of the present application. In FIG. 3A, the wafer 310 of the electrostatic discharge protection device 300 is further provided with an auxiliary dummy pad ADUM1 and an auxiliary electrostatic discharge circuit AESD1 coupled to the auxiliary dummy pad ADUM1. The auxiliary dummy pad ADUM1 and the dummy pad DUM1 can be electrically coupled through a wire IWIR. The wire IWIR may be formed on the wafer 310, and the wire IWIR may be constructed through any material on the wafer 310 for forming a wire.
在圖3A的實施例中,當靜電放電現象發生時,對應產生的靜電放電電流可先被傳導至輔助虛設焊墊ADUM1,並透過輔助靜電放電電路AESD1進行宣洩,再透過耦接至虛設焊墊ADUM1的靜電放電電路ESD2進行進一步的能量宣洩。若還有殘餘能量未能宣洩,則可再透過與輸入輸出焊墊VS1耦接的靜電放電電路ESD1進行能量宣洩。In the embodiment of FIG. 3A, when the electrostatic discharge phenomenon occurs, the corresponding electrostatic discharge current can be conducted to the auxiliary dummy pad ADUM1, and then released through the auxiliary electrostatic discharge circuit AESD1, and then coupled to the dummy pad. The electrostatic discharge circuit ESD2 of ADUM1 performs further energy release. If there is still residual energy that cannot be released, the energy can be released through the electrostatic discharge circuit ESD1 coupled to the input / output pad VS1.
在另一方面,輔助虛設焊墊的數量可以是多個。在圖3B中,晶片310上設置輔助虛設焊墊ADUM1以及ADUM2,以及分別對應輔助虛設焊墊ADUM1以及ADUM2的輔助靜電放電電路AESD1以及AESD2。輔助虛設焊墊ADUM1以及ADUM2分別耦接至輔助靜電放電電路AESD1以及AESD2。輔助虛設焊墊ADUM1以及ADUM2透過並聯的傳輸導線耦接至輸入輸出端子COFVS1。當靜電放電現象發生時,對應產生的靜電放電電流可先被傳導至輔助虛設焊墊ADUM1以及ADUM2並透過輔助靜電放電電路AESD1及AESD2進行同步的能量宣洩動作,並提升靜電放電電流的宣洩能力。In another aspect, the number of auxiliary dummy pads may be plural. In FIG. 3B, the auxiliary dummy pads ADUM1 and ADUM2 are provided on the chip 310, and the auxiliary electrostatic discharge circuits AESD1 and AESD2 corresponding to the auxiliary dummy pads ADUM1 and ADUM2, respectively. The auxiliary dummy pads ADUM1 and ADUM2 are respectively coupled to the auxiliary electrostatic discharge circuits AESD1 and AESD2. The auxiliary dummy pads ADUM1 and ADUM2 are coupled to the input / output terminal COFVS1 through a parallel transmission wire. When the electrostatic discharge phenomenon occurs, the corresponding electrostatic discharge current can be conducted to the auxiliary dummy pads ADUM1 and ADUM2 first, and the energy release action can be synchronized through the auxiliary electrostatic discharge circuits AESD1 and AESD2, and the ability of the electrostatic discharge current can be improved.
以下請參照圖4A以及圖4B,圖4A以及圖4B分別繪示本發明不同實施例的靜電放電保護裝置的示意圖。圖4A以及圖4B的實施方式為本案圖2實施例的延伸實施方式。與圖3A、3B相類似,透過在晶片410上配置一個或多個輔助虛設焊墊ADUM1、ADUM2以及對應的輔助靜電放電電路AESD1、AESD2,並使輔助虛設焊墊ADUM1、ADUM2相互電性耦接,且與虛設焊墊DUM1進行耦接。如此一來,當靜電放電現象發生時,對應產生的靜電放電電流可先被傳導至一個或多個的輔助虛設焊墊ADUM1、ADUM2,並透過一個或多個的輔助靜電放電電路AESD1、AESD2進行宣洩,再透過耦接至虛設焊墊ADUM1的靜電放電電路ESD2進行進一步的能量宣洩。若還有殘餘能量未能宣洩,則可再透過與輸入輸出焊墊VS1耦接的靜電放電電路ESD1進行能量宣洩。有效提升靜電放電防護等級。Please refer to FIG. 4A and FIG. 4B, FIG. 4A and FIG. 4B are schematic diagrams of electrostatic discharge protection devices according to different embodiments of the present invention, respectively. The implementation in FIG. 4A and FIG. 4B is an extended implementation of the embodiment in FIG. 2 of the present application. Similar to FIGS. 3A and 3B, one or more auxiliary dummy pads ADUM1 and ADUM2 and corresponding auxiliary electrostatic discharge circuits AESD1 and AESD2 are arranged on the chip 410, and the auxiliary dummy pads ADUM1 and ADUM2 are electrically coupled to each other. , And coupled with the dummy pad DUM1. In this way, when the electrostatic discharge phenomenon occurs, the corresponding electrostatic discharge current can be conducted to one or more auxiliary dummy pads ADUM1 and ADUM2 first, and carried out through one or more auxiliary electrostatic discharge circuits AESD1 and AESD2. The energy is released, and further energy is released through the electrostatic discharge circuit ESD2 coupled to the dummy pad ADUM1. If there is still residual energy that cannot be released, the energy can be released through the electrostatic discharge circuit ESD1 coupled to the input / output pad VS1. Effectively improve the electrostatic discharge protection level.
以下請參照圖5,圖5繪示本發明一實施例的靜電放電保護的方法流程圖。步驟S510,使晶片配置在軟性電路板上,其中軟性電路板具有至少一第一輸入輸出端子以及至少一第二輸入輸出端子分別連接至電路板以及玻璃基板,晶片具有至少一輸入輸出焊墊以及虛設焊墊。接著,在步驟S520中,在晶片上設置分別耦接至輸入輸出焊墊以及虛設焊墊的多數個靜電放電電路,且在步驟S530中,在軟性電路板上形成多數條第一導線,使第一輸入輸出端子、虛設焊墊以及輸入輸出焊墊依序串聯耦接。如此一來,當靜電放電現象發生時,靜電放電電流可先傳導至虛設焊墊,並透過虛設焊墊對應的靜電放電路進行能量宣洩動作,並藉以提升靜電放電防護的等級。Please refer to FIG. 5 below, which illustrates a flowchart of an electrostatic discharge protection method according to an embodiment of the present invention. In step S510, the chip is arranged on a flexible circuit board, wherein the flexible circuit board has at least one first input-output terminal and at least one second input-output terminal connected to the circuit board and the glass substrate, respectively, and the chip has at least one input-output pad and Dummy pads. Next, in step S520, a plurality of electrostatic discharge circuits respectively coupled to the input / output pads and the dummy pads are provided on the wafer, and in step S530, a plurality of first wires are formed on the flexible circuit board so that the first An input-output terminal, a dummy pad and an input-output pad are coupled in series in sequence. In this way, when the electrostatic discharge phenomenon occurs, the electrostatic discharge current can be conducted to the dummy pad first, and the energy discharge action can be performed through the electrostatic discharge circuit corresponding to the dummy pad, thereby improving the level of electrostatic discharge protection.
此外,本發明實施例中還可透過配置一個或多個輔助虛設焊墊以及輔助靜電放電路的方法來提升靜電放電的能力,進一步提升靜電放電防護的等級。In addition, in the embodiment of the present invention, a method of configuring one or more auxiliary dummy pads and an auxiliary electrostatic discharge circuit can be used to improve the electrostatic discharge capability and further improve the level of electrostatic discharge protection.
關於上述步驟的實施細節在前述的多個實施例及實施方式中都已有詳盡的說明,在此恕不多贅述。The implementation details of the above steps have been described in detail in the foregoing multiple embodiments and implementations, and will not be repeated here.
綜上所述,本發明透過在軟性電路板上形成傳輸導線,並透過傳輸導線使靜電放電電流先通過晶片上的虛設焊墊,並藉由虛設焊墊對應的靜電放電電路進行能量宣洩動作。如此一來,在不用更動晶片的佈局方式,僅透過修改軟性電路板上的走線,就可有效的提升靜電放電防護的等級,可降低晶片所需的生產成本。In summary, in the present invention, a transmission wire is formed on a flexible circuit board, and the electrostatic discharge current is first passed through the dummy pad on the wafer through the transmission wire, and the energy discharge action is performed by the electrostatic discharge circuit corresponding to the dummy pad. In this way, without changing the layout of the chip, only by modifying the wiring on the flexible circuit board, the level of electrostatic discharge protection can be effectively improved, and the production cost required for the chip can be reduced.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100、200、300、400‧‧‧靜電放電保護裝置
110、210、310、410‧‧‧晶片
120‧‧‧軟性電路板
WIR1~WIR4‧‧‧傳輸導線
COFVS1、COFVS2‧‧‧輸入輸出端子
VS1‧‧‧輸入輸出焊墊
DUM1‧‧‧虛設焊墊
ESD1、ESD2‧‧‧靜電放電電路
101‧‧‧電路板
102‧‧‧玻璃基板
AESD1、AESD2‧‧‧輔助靜電放電電路
ADUM1、ADUM2‧‧‧輔助虛設焊墊
IWIR‧‧‧導線
S510~S530‧‧‧靜電放電保護的步驟100, 200, 300, 400‧‧‧ electrostatic discharge protection devices
110, 210, 310, 410‧‧‧ chips
120‧‧‧ flexible circuit board
WIR1 ~ WIR4‧‧‧Transmission Conductor
COFVS1, COFVS2‧‧‧ input and output terminals
VS1‧‧‧I / O Pad
DUM1‧‧‧Dummy pad
ESD1, ESD2‧‧‧electrostatic discharge circuit
101‧‧‧Circuit Board
102‧‧‧ glass substrate
AESD1, AESD2‧‧‧Auxiliary electrostatic discharge circuit
ADUM1, ADUM2‧‧‧Auxiliary dummy pads
IWIR‧‧‧Wire
S510 ~ S530‧‧‧‧Procedure for electrostatic discharge protection
圖1繪示本發明一實施例的靜電放電保護裝置的示意圖。 圖2並繪示本發明另一實施例的靜電放電保護裝置的示意圖。 圖3A以及圖3B分別繪示本發明不同實施例的靜電放電保護裝置的示意圖。 圖4A以及圖4B分別繪示本發明不同實施例的靜電放電保護裝置的示意圖。 圖5繪示本發明一實施例的靜電放電保護的方法流程圖。FIG. 1 is a schematic diagram of an electrostatic discharge protection device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of an electrostatic discharge protection device according to another embodiment of the present invention. 3A and 3B are schematic diagrams of electrostatic discharge protection devices according to different embodiments of the present invention, respectively. 4A and 4B are schematic diagrams of electrostatic discharge protection devices according to different embodiments of the present invention, respectively. FIG. 5 is a flowchart of an electrostatic discharge protection method according to an embodiment of the present invention.
100‧‧‧靜電放電保護裝置 100‧‧‧ Electrostatic discharge protection device
110‧‧‧晶片 110‧‧‧Chip
120‧‧‧軟性電路板 120‧‧‧ flexible circuit board
WIR1~WIR3‧‧‧傳輸導線 WIR1 ~ WIR3‧‧‧Transmission Conductor
COFVS1、COFVS2‧‧‧輸入輸出端子 COFVS1, COFVS2‧‧‧ input and output terminals
VS1‧‧‧輸入輸出焊墊 VS1‧‧‧I / O Pad
DUM1‧‧‧虛設焊墊 DUM1‧‧‧Dummy pad
ESD1、ESD2‧‧‧靜電放電電路 ESD1, ESD2‧‧‧electrostatic discharge circuit
101‧‧‧電路板 101‧‧‧Circuit Board
102‧‧‧玻璃基板 102‧‧‧ glass substrate
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