TW201810415A - Plasma processing apparatus plasma processing method and recording medium - Google Patents
Plasma processing apparatus plasma processing method and recording medium Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Abstract
Description
本發明，係關於藉由經電漿化的處理氣體來進行被處理基板之電漿處理的技術。 The present invention relates to a technique for performing plasma processing of a substrate to be processed by a plasma processing gas.
在液晶顯示裝置(LCD)等之平板顯示器(FPD)的製造工程中，係存在有將經電漿化的處理氣體供給至被處理基板即玻璃基板，而進行蝕刻處理或成膜處理等之電漿處理的工程。 In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display device (LCD), there is electricity for supplying a plasma processing gas to a glass substrate, which is a substrate to be processed, and performing an etching process or a film forming process. Pulp processing works.
例如電漿處理，係在將玻璃基板吸附保持於被設置在形成有真空氛圍的處理容器內之載置台之靜電夾頭上的狀態下而加以實施。結束了電漿處理的玻璃基板，係在吸附保持狀態被解除而搬送至載置台的上方側後，從處理容器被搬出。 For example, plasma processing is performed in a state where a glass substrate is adsorbed and held on an electrostatic chuck provided on a mounting table in a processing container in which a vacuum atmosphere is formed. The glass substrate that has undergone the plasma processing is released from the processing container after being transferred to the upper side of the mounting table after the adsorption holding state is released.
在此，有在使電漿處理後的玻璃基板上升移動之際，藉由將氧氣等之除電氣體供給至處理容器內而電漿化的方式，進行靜電夾頭之除電等的情況。另一方面，在玻璃基板之上升移動的期間中，由於載置台之上面未被玻璃基板覆蓋(未載置有玻璃基板)，因此，亦有受到伴隨著電漿到達至載置台的不良影響之虞。 Here, when the glass substrate subjected to the plasma treatment is moved up, the electrostatic chuck may be removed by supplying a static elimination gas such as oxygen into the processing container to plasmatize it. On the other hand, during the upward movement of the glass substrate, the upper surface of the mounting table is not covered by the glass substrate (the glass substrate is not mounted). Therefore, it is also adversely affected by the plasma reaching the mounting table. Yu.
在此，專利文獻1，係記載有如下述之技術：藉由與除電氣體即氧氣之電漿的接觸，以樹脂即聚醯亞胺製的耐蝕膜來被覆易腐蝕之碳製的載置台。在該載置台的上面，係以精度良好地進行電漿處理中之玻璃基板的溫度調整為目的，開口有用以將熱傳送氣體(例如氦氣)供給至玻璃基板之背面的多數個氣體供給孔。各氣體供給孔的內面，雖係被前述的耐蝕膜而覆蓋，但樹脂製的耐蝕膜，係因長時間之電漿曝露而腐蝕慢慢地進行。關於該點，專利文獻1，係記載有如下述之技術：在玻璃基板之上升移動的期間中，從氣體供給孔吐出He氣體等的惰性氣體，藉此，阻止電漿進入至該氣體供給孔內，且抑制被耐蝕膜被覆之氣體供給孔的內壁面中之腐蝕的進行。 Here, Patent Document 1 describes a technique in which a carbon-made mounting table is covered with a corrosion-resistant film made of polyimide, which is a resin, by contact with a plasma of oxygen, which is a static elimination gas. The upper surface of the mounting table is used to precisely adjust the temperature of the glass substrate during the plasma processing, and the opening is provided with a plurality of gas supply holes for supplying a heat transfer gas (for example, helium gas) to the rear surface of the glass substrate. . Although the inner surface of each gas supply hole is covered with the aforementioned corrosion-resistant film, the resin-made corrosion-resistant film is slowly corroded by long-term plasma exposure. Regarding this point, Patent Document 1 describes a technique in which an inert gas such as He gas is ejected from a gas supply hole during the upward movement of the glass substrate, thereby preventing the plasma from entering the gas supply hole. And suppresses the progress of corrosion in the inner wall surface of the gas supply hole covered with the corrosion-resistant film.
〔專利文獻1〕日本特許第4493863號公報：第0007、0034、0038~0039段、圖4 [Patent Document 1] Japanese Patent No. 4498863: paragraphs 0007, 0034, 0038 to 0039, Fig. 4
不同於上述之專利文獻1所記載的技術，與碳或樹脂製的耐蝕膜相比，在由相對於除電氣體電漿之耐腐蝕性高且不需採取腐蝕防止的對策之材料所構成的載置台中，從成本降低的觀點來看，在玻璃基板之上升移動的期 間中不需要進行以防止腐蝕為目的之惰性氣體吐出。又，專利文獻1，係未記載任何在玻璃基板的移動期間中，伴隨著載置台曝露於除電氣體電漿之腐蝕以外的不良影響。 Different from the technology described in Patent Document 1 described above, compared with a carbon or resin corrosion-resistant film, the load is made of a material that has higher corrosion resistance with respect to a static elimination gas plasma and does not require measures to prevent corrosion. From the standpoint of cost reduction, the stage of the glass substrate There is no need to discharge inert gas for the purpose of preventing corrosion. In addition, Patent Document 1 does not describe any adverse effects other than the corrosion of the stage by the exposure of the mounting table to the plasma gas during the movement of the glass substrate.
本發明，係有鑑於像這樣之情事而進行者，其目的在於提供如下述之技術：在使被處理基板從載置台上升移動的期間中，在形成除電氣體之電漿時，降低該電漿帶給載置台的影響，該載置台，係藉由對除電氣體之電漿具備有耐腐蝕性的材料所構成。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a technique for lowering a plasma when forming a plasma of a static elimination gas during a period in which a substrate to be processed is moved upward from a mounting table. The mounting table is made of a material that has corrosion resistance to the plasma of the static elimination gas.
本發明之電漿處理裝置，係用以藉由經電漿化的處理氣體來對被處理基板進行電漿處理，該電漿處理裝置，其特徵係，具備有：處理容器，對被處理基板進行電漿處理，在內壁面附著有在前述電漿處理之際所生成的副生成物；載置台，設置於前述處理容器內且具備有升降機構，該升降機構，係用以在吸附保持前述被處理基板之靜電夾頭上的吸附保持位置與該吸附保持位置之上方側的位置之間進行被處理基板之升降搬送；除電氣體供給部，用以將進行被處理基板之除電的除電氣體供給至前述處理容器內；電漿形成部，用以在使前述被處理基板上升的期間中，形成前述除電氣體之電漿；及抑制進入氣體供給部，在使前述被處理基板上升的期 間中，為了抑制附著於前述處理容器之副生成物與除電氣體之電漿的反應成分進入至前述被處理基板之下方側，而將抑制進入氣體供給至前述載置台與被處理基板所包夾的空間，前述載置台，係藉由對前述除電氣體之電漿具備有耐腐蝕性的材料所構成。 The plasma processing apparatus of the present invention is used to perform plasma processing on a substrate to be processed by a plasma-treated processing gas. The plasma processing apparatus is characterized in that it includes a processing container and a substrate to be processed. Plasma treatment is performed, and by-products generated during the aforementioned plasma treatment are adhered to the inner wall surface; a mounting table is provided in the aforementioned processing container and is provided with a lifting mechanism, which is used to adsorb and hold the foregoing The substrate to be processed is moved up and down between an adsorption holding position on the electrostatic chuck of the substrate to be processed and a position above the adsorption holding position; a static elimination gas supply unit is used to supply a static elimination gas for removing static electricity from the substrate to be processed. In the processing container; a plasma forming section for forming the plasma of the static elimination gas during the period when the substrate to be processed is raised; and a suppression of entry into the gas supply section during the period when the substrate to be processed is raised At this time, in order to suppress the reaction components of the plasma generated by the by-products and the static elimination gas adhering to the processing container from entering the lower side of the substrate to be processed, the suppression gas is supplied to the mounting table and the substrate to be processed. The mounting space is made of a material having corrosion resistance to the plasma of the static elimination gas.
本發明，係在電漿處理後之被處理基板之上升移動的期間中，在處理容器內形成除電氣體的電漿時，將抑制進入氣體供給至載置台與被處理基板之間的空間。該結果，由於因除電氣體之電漿所產生的反應成分進入至被處理基板之下方側被抑制，因此，即便是載置台為對除電氣體之電漿具備有耐腐蝕性的情況，亦可抑制腐蝕以外的原因所致之對載置台之不良影響的發生。 In the present invention, during the upward movement of the substrate to be processed after the plasma processing, when the plasma of the degassing gas is formed in the processing container, the suppression gas is supplied to the space between the mounting table and the substrate to be processed. As a result, the reaction components generated by the plasma of the static elimination gas are prevented from entering the lower side of the substrate to be processed. Therefore, even if the mounting table has corrosion resistance to the plasma of the static elimination gas, it can be suppressed. The occurrence of adverse effects on the mounting table caused by reasons other than corrosion.
G‧‧‧基板 G‧‧‧ substrate
1‧‧‧電漿處理裝置 1‧‧‧ Plasma treatment device
2‧‧‧載置台 2‧‧‧mounting table
212‧‧‧氣體供給路徑 212‧‧‧Gas supply path
22‧‧‧靜電夾頭 22‧‧‧Static chuck
23‧‧‧升降銷 23‧‧‧ Lifting Pin
31‧‧‧噴頭 31‧‧‧Nozzle
41‧‧‧稀釋氣體供給部 41‧‧‧Diluted gas supply department
42‧‧‧蝕刻氣體供給部 42‧‧‧Etching gas supply department
43‧‧‧熱傳送氣體供給部 43‧‧‧Heat transfer gas supply unit
5‧‧‧高頻天線 5‧‧‧ high frequency antenna
6‧‧‧控制部 6‧‧‧Control Department
7‧‧‧沈積層 7‧‧‧ sedimentary layer
71‧‧‧反應成分 71‧‧‧ reaction ingredients
〔圖1〕實施形態之電漿處理裝置的縱剖側視圖。 [Fig. 1] A longitudinal sectional side view of a plasma processing apparatus according to an embodiment.
〔圖2〕相對於前述電漿處理裝置之氣體供給系統的說明圖。 [Fig. 2] An explanatory diagram of a gas supply system with respect to the aforementioned plasma processing apparatus.
〔圖3〕表示蝕刻氣體和稀釋氣體之混合比率與蝕刻速度之關係的示意圖。 [Fig. 3] A schematic diagram showing a relationship between a mixing ratio of an etching gas and a diluent gas and an etching rate.
〔圖4〕前述電漿處理裝置的第1整體作用圖。 [FIG. 4] A first overall operation diagram of the plasma processing apparatus.
〔圖5〕前述電漿處理裝置的第1放大作用圖。 [Fig. 5] A first enlarged view of the plasma processing apparatus.
〔圖6〕前述電漿處理裝置的第2整體作用圖。 [FIG. 6] A second overall operation diagram of the plasma processing apparatus.
〔圖7〕前述電漿處理裝置的第2放大作用圖。 [FIG. 7] A second enlarged view of the plasma processing apparatus.
以下，參閱圖1、圖2，說明本發明之實施形態之電漿處理裝置1的構成。 Hereinafter, the configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described with reference to FIGS. 1 and 2.
本例之電漿處理裝置1，係構成為蝕刻處理裝置，該蝕刻處理裝置，係在被處理基板即矩形玻璃基板例如FPD用之玻璃基板(以下僅記載為基板)G上形成例如薄膜電晶體時，對形成於基板G之表面的金屬膜、ITO膜、氧化膜等之被蝕刻膜供給經電漿化的處理氣體而執行蝕刻處理。 The plasma processing device 1 of this example is configured as an etching processing device. This etching processing device is formed on a rectangular glass substrate, such as a substrate to be processed, such as a glass substrate for FPD (hereinafter simply referred to as a substrate) G. At this time, an etching process is performed by supplying a plasma-treated processing gas to an etched film such as a metal film, an ITO film, or an oxide film formed on the surface of the substrate G.
在此，作為FPD，係例示有液晶顯示器(LCD)、電致發光(Electro Luminescence；EL)顯示器、電漿顯示器面板(PDP)等。 Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.
如圖1的縱剖側視圖所示，電漿處理裝置1，係具備有由導電性材料例如內壁面經耐酸鋁處理的鋁所構成之角筒形狀的容器本體10，該容器本體10，係電性接地。在容器本體10的上面形成有開口，該開口被頂板部11氣密地封閉。該些容器本體10及頂板部11，係相當於本例之電漿處理裝置1的處理容器，被該些容器本體10及頂板部11包圍的空間，係成為基板G的處理空間100。 As shown in the longitudinal cross-sectional side view of FIG. 1, the plasma processing apparatus 1 is provided with a container body 10 in the shape of a prism formed of a conductive material such as aluminum having an inner wall surface treated with acid-resistant aluminum. Electrically grounded. An opening is formed on the upper surface of the container body 10, and the opening is hermetically closed by the top plate portion 11. The container bodies 10 and the top plate portion 11 are processing containers corresponding to the plasma processing apparatus 1 of this example, and the space surrounded by the container bodies 10 and the top plate portion 11 is a processing space 100 for the substrate G.
又，在容器本體10的側壁，係設置有用以搬入搬出基 板G的搬入搬出口101及開關搬入搬出口101的閘閥102。 The side wall of the container body 10 is provided with a base for carrying in and out. The gate valve 102 of the board G carrying in / out port 101 and the switch carrying in / out port 101 are opened and closed.
在處理空間100的下部側，係以與前述頂板部11對向的方式，設置有用以載置基板G的載置台2。載置台2，係具備有由導電性之金屬材料，例如表面經耐酸鋁處理之鋁所構成的載置台本體21。載置台本體21的上面，係設置有靜電夾頭22，可藉由來自直流電源(未圖示)之電力的供給與遮斷，切換基板G之吸附保持、解除，該靜電夾頭22，係在例如氧化釔等之陶瓷層內配置未圖示的夾頭電極而成。載置台本體21，係收納於絕緣體框24內，經由該絕緣體框24而設置於容器本體10的底面。 On the lower side of the processing space 100, a mounting table 2 for mounting the substrate G is provided so as to face the top plate portion 11 described above. The mounting table 2 is provided with a mounting table body 21 made of a conductive metal material, for example, aluminum having a surface treated with acid-resistant aluminum. The upper surface of the mounting table body 21 is provided with an electrostatic chuck 22, which can switch the adsorption, holding and release of the substrate G by the supply and interruption of electric power from a DC power supply (not shown). A chuck electrode (not shown) is arranged in a ceramic layer such as yttrium oxide. The mounting table body 21 is housed in an insulator frame 24 and is provided on the bottom surface of the container body 10 via the insulator frame 24.
又，載置台2，係為了經由搬入搬出口101而在進入至處理空間100內之外部的基板搬送機構(未圖示)之間進行基板G的收授棚架，而具備有用以在靜電夾頭22上的吸附保持位置與該吸附保持位置之上方側的收授位置之間進行基板G之升降搬送的4根以上(本實施形態為4根)升降銷23。各升降銷23，係以將載置台本體21及容器本體10之底板貫通於上下方向的方式而設置，該些升降銷23的下端部，係連接於被設置在容器本體10的外部之共通的升降板231。 In addition, the mounting table 2 is provided with a shelf for receiving and receiving the substrate G between a substrate transfer mechanism (not shown) that enters the outside of the processing space 100 through the loading and unloading port 101, and is provided with an electrostatic clamp. Four or more lifting pins 23 (four in this embodiment) for lifting and transferring the substrate G between the suction holding position on the head 22 and the receiving position above the suction holding position. Each lifting pin 23 is provided so that the bottom plate of the mounting table main body 21 and the container body 10 penetrate in the up-down direction, and the lower ends of these lifting pins 23 are connected to a common one provided outside the container body 10. Lifting plate 231.
升降板231，係更連接於驅動部232，且使用該驅動部232來使升降板231升降，並使升降銷23的上端從靜電夾頭22突出/沒入，藉此，在吸附保持位置與收授位置之間執行基板G的升降搬送。另外，在各升降銷23所貫通之容器本體10的底板與升降板231之間，係設置有波紋 管233，以保持容器本體10(處理空間100)內之氣密。 The lifting plate 231 is further connected to the driving portion 232, and the driving portion 232 is used to raise and lower the lifting plate 231, and the upper end of the lifting pin 23 is protruded / submerged from the electrostatic chuck 22. The substrate G is moved up and down between the receiving positions. In addition, a corrugation is provided between the bottom plate of the container body 10 and the lifting plate 231 penetrated by the lifting pins 23. The tube 233 is used for keeping the airtightness in the container body 10 (processing space 100).
升降銷23、升降板231、驅動部232，係相當於本例的升降機構。 The elevating pin 23, the elevating plate 231, and the driving portion 232 are equivalent to the elevating mechanism of this example.
在載置台2(載置台本體21)，係經由匹配器251連接有第2高頻電源252。第2高頻電源252，係對載置台2施加偏壓用之高頻電力例如頻率為3.2MHz的高頻電力。藉由因該偏壓用之高頻電力所生成的自給偏壓，可將生成於處理空間100內之電漿中的離子引入至基板G。 A second high-frequency power source 252 is connected to the mounting table 2 (the mounting table body 21) via a matching device 251. The second high-frequency power source 252 is high-frequency power for biasing the mounting table 2, for example, high-frequency power having a frequency of 3.2 MHz. By the self-supplied bias generated by the high-frequency power for the bias, ions in the plasma generated in the processing space 100 can be introduced to the substrate G.
而且，在載置台2內，係為了控制基板G之溫度，而設置有由陶瓷加熱器等之加熱手段或冷媒流路等所構成的溫度控制機構與溫度感測器(皆未圖示)。 In addition, a temperature control mechanism and a temperature sensor (neither of which is shown) constituted by a heating means such as a ceramic heater or a refrigerant flow path are provided in the mounting table 2 to control the temperature of the substrate G.
另一方面，由於執行蝕刻處理的容器本體10(處理空間100)內成為真空氛圍，因此，基板G與載置台2藉由靜電夾頭22的上面與基板G的背面之間的微小間隙而絕熱，故難以高精度地對基板G進行溫度控制。因此，本例之載置台2，係具備有將熱傳送氣體供給至靜電夾頭22(載置台2)與基板G之間的機構。 On the other hand, since the inside of the container body 10 (processing space 100) where the etching process is performed is a vacuum atmosphere, the substrate G and the mounting table 2 are insulated by a slight gap between the upper surface of the electrostatic chuck 22 and the rear surface of the substrate G. Therefore, it is difficult to precisely control the temperature of the substrate G. Therefore, the mounting table 2 in this example is provided with a mechanism for supplying a heat transfer gas between the electrostatic chuck 22 (the mounting table 2) and the substrate G.
作為前述熱傳送氣體的供給機構，在載置台2的載置台本體21內，係形成有沿著靜電夾頭22而變寬廣之扁平的載置台氣體擴散室211。在載置台氣體擴散室211的上面側，係形成有將載置台本體21及靜電夾頭22貫通於上下方向的多數個氣體供給路徑212，該些多數個氣體供給路徑212，係分散地形成於靜電夾頭22的面內。 As the heat transfer gas supply mechanism, a flat mounting table gas diffusion chamber 211 that is widened along the electrostatic chuck 22 is formed in the mounting table body 21 of the mounting table 2. A plurality of gas supply paths 212 are formed on the upper surface of the mounting table gas diffusion chamber 211 to penetrate the mounting table body 21 and the electrostatic chuck 22 in the vertical direction. The plurality of gas supply paths 212 are formed in a distributed manner. The surface of the electrostatic chuck 22.
各氣體供給路徑212的下端部，係連通於載置 台氣體擴散室211，另一方面，該些氣體供給路徑212的上端部，係開口於靜電夾頭22的表面。藉由該構成，可由靜電夾頭22之上面而分散地吐出載置台氣體擴散室211內的氣體。在載置台氣體擴散室211的下面側，係連接有載置台氣體供給管線213。如圖2所示，載置台氣體供給管線213的上游側，係經由開關閥V3、壓力調節閥431連接於熱傳送氣體供給部43。從熱傳送氣體供給部43，供給作為熱傳送氣體的例如氦(He)氣。 The lower end portion of each gas supply path 212 is connected to the mounting On the other hand, the upper end portions of the gas supply channels 212 are opened on the surface of the electrostatic chuck 22. With this configuration, the gas in the stage gas diffusion chamber 211 can be dispersedly ejected from the upper surface of the electrostatic chuck 22. A mounting table gas supply line 213 is connected to the lower surface of the mounting table gas diffusion chamber 211. As shown in FIG. 2, the upstream side of the mounting table gas supply line 213 is connected to the heat transfer gas supply unit 43 via an on-off valve V3 and a pressure regulating valve 431. From the heat transfer gas supply unit 43, for example, helium (He) gas is supplied as the heat transfer gas.
又，如圖1所示，在容器本體10的底面，係形成有排氣口103，在該排氣口103，係連接有包含真空泵等的真空排氣部12。處理空間100的內部，係藉由該真空排氣部12而真空排氣直至成為蝕刻處理時所需的壓力。而且，為了使供給至處理空間100內之氣體均勻地朝向載置台2的周方向流動，因此，亦可在載置台2(絕緣體框24)的側周面與容器本體10的內壁面之間配置貫穿設置有多數個小孔的整流板104。 As shown in FIG. 1, an exhaust port 103 is formed on the bottom surface of the container body 10, and a vacuum exhaust unit 12 including a vacuum pump or the like is connected to the exhaust port 103. The inside of the processing space 100 is evacuated by the vacuum exhaust unit 12 until the pressure required for the etching process is reached. Furthermore, in order to make the gas supplied into the processing space 100 flow uniformly in the circumferential direction of the mounting table 2, it may be arranged between the side peripheral surface of the mounting table 2 (insulator frame 24) and the inner wall surface of the container body 10. A rectifying plate 104 provided with a plurality of small holes is penetrated therethrough.
如圖1、圖2所示，在頂板部11的下面側，係設置有用以將處理氣體等供給至處理空間100的噴頭31。噴頭31，係具備有可朝向被吸附保持於靜電夾頭22之基板G的整面供給處理氣體等之扁平的噴淋氣體擴散室311。在噴頭31的下面側，係形成有多數個噴淋氣體吐出孔312，擴散於噴淋氣體擴散室311內的氣體，係經由該些噴淋氣體吐出孔312而朝向處理空間100分散供給。 As shown in FIGS. 1 and 2, a shower head 31 for supplying a processing gas or the like to the processing space 100 is provided on the lower surface side of the top plate portion 11. The shower head 31 is provided with a flat shower gas diffusion chamber 311 that can supply a processing gas or the like to the entire surface of the substrate G that is adsorbed and held on the electrostatic chuck 22. A plurality of spray gas discharge holes 312 are formed on the lower side of the shower head 31, and the gas diffused in the spray gas diffusion chamber 311 is distributed and supplied to the processing space 100 through the spray gas discharge holes 312.
又，在噴頭31的上面側，係連接有連通於噴 淋氣體擴散室311的噴淋氣體供給管線32。如圖2所示，噴淋氣體供給管線32的上游側，係分歧成2系統，一方側的系統，係經由開關閥V21、流量調節部421連接於蝕刻氣體供給部42。又，噴淋氣體供給管線32之另一方側的系統，係經由開關閥V1、流量調節部411連接於稀釋氣體供給部41。 In addition, on the upper side of the shower head 31, a connection to the shower is connected. The shower gas supply line 32 of the shower gas diffusion chamber 311. As shown in FIG. 2, the upstream side of the shower gas supply line 32 is divided into two systems, and the system on one side is connected to the etching gas supply unit 42 via the on-off valve V21 and the flow rate adjustment unit 421. The system on the other side of the shower gas supply line 32 is connected to the diluent gas supply unit 41 via the on-off valve V1 and the flow rate adjustment unit 411.
在本例的電漿處理裝置1中，從蝕刻氣體供給部42，供給具有形成於基板G的表面之相對於被蝕刻膜之蝕刻作用的蝕刻氣體(作用氣體)。在圖2所示的例子中，被蝕刻膜為鉬膜，從蝕刻氣體供給部42，供給具有相對於鉬膜之蝕刻作用的六氟化硫(SF6)氣體。又，從稀釋氣體供給部41，供給用以稀釋蝕刻氣體的稀釋氣體即氧(O2)氣體。 In the plasma processing apparatus 1 of this example, an etching gas (acting gas) having an etching action with respect to a film to be etched, which is formed on the surface of the substrate G, is supplied from the etching gas supply unit 42. In the example shown in FIG. 2, the film to be etched is a molybdenum film, and a sulfur hexafluoride (SF 6 ) gas having an etching effect on the molybdenum film is supplied from the etching gas supply unit 42. Further, from the dilution gas supply portion 41, supplying an etching gas for diluting diluting gas i.e. oxygen (O 2) gas.
對噴頭31供給混合了該些蝕刻氣體與稀釋氣體的處理氣體。 The shower head 31 is supplied with a processing gas in which the etching gas and the dilution gas are mixed.
又，從稀釋氣體供給部41所供給的O2氣體，係在將蝕刻處理後之基板G從載置台2(靜電夾頭22)上的吸附位置搬送至收授位置之際，亦利用作為用以進行靜電夾頭22之除電的除電氣體。又，發明人發現，在解除靜電夾頭22所致之吸附保持狀態而使基板G上升移動的期間中，基板G亦存在有電荷而成為帶電狀態。當基板G成為帶電狀態時，則亦成為在搬送時等吸引基板G與帶反向電位之微粒而引起污染物的要因。上述的除電電漿，係亦具有進行該基板G之除電的作用。 The O 2 gas supplied from the diluent gas supply unit 41 is also used for transferring the substrate G after the etching process from the adsorption position on the mounting table 2 (the electrostatic chuck 22) to the receiving position. A static elimination gas is used to neutralize the electrostatic chuck 22. Moreover, the inventors have found that during the period in which the substrate G is moved up while the adsorption holding state caused by the electrostatic chuck 22 is released, the substrate G also has an electric charge and is in a charged state. When the substrate G is in a charged state, it also becomes a cause of causing contamination by attracting the substrate G and particles with reverse potential during transportation and the like. The above-mentioned static elimination plasma also has the function of performing static elimination on the substrate G.
在該觀點中，稀釋氣體供給部41、流量調節部411、開關閥V1、噴淋氣體供給管線32及噴頭31，係相當於用以將除電氣體供給至容器本體10內的除電氣體供給部。 In this point of view, the diluent gas supply unit 41, the flow rate adjustment unit 411, the on-off valve V1, the shower gas supply line 32, and the shower head 31 correspond to a static elimination gas supply unit for supplying the static elimination gas into the container body 10.
又，如圖1、圖2所示，在頂板部11的下面，係形成有凹部，噴頭31之上面與頂板部11之下面所包圍的前述凹部內之空間，係成為用以配置高頻天線5的天線室50。已述的噴頭31，係構成藉由例如石英等之介電質所構成的介電質窗。 As shown in FIGS. 1 and 2, a recess is formed below the top plate portion 11, and a space in the recess enclosed by the top surface of the shower head 31 and the bottom surface of the top plate portion 11 is used to arrange a high-frequency antenna. 5 的 天线 室 50。 5 antenna room 50. The above-mentioned shower head 31 constitutes a dielectric window composed of a dielectric such as quartz.
例如高頻天線5，係以在對應於噴頭31的面內，沿著噴頭31之周方向環繞的方式，形成為螺旋狀。另外，高頻天線5的形狀，係不限定於螺旋，亦可為使一條或複數個天線線成為環狀的環狀天線或線圈狀天線。 For example, the high-frequency antenna 5 is formed in a spiral shape so as to surround the nozzle 31 in a plane corresponding to the nozzle 31. The shape of the high-frequency antenna 5 is not limited to a spiral, and may be a loop antenna or a coil antenna in which one or a plurality of antenna lines are looped.
在各高頻天線5，係經由匹配器511連接有第1高頻電源512。從第1高頻電源512經由匹配器511，將例如13.56MHz的高頻電力供給至各高頻天線5。藉此，經由介電質窗供給至處理空間100內的處理氣體或除電氣體可藉由感應耦合而電漿化，進行所期望的蝕刻處理或除電處理。 A first high-frequency power source 512 is connected to each high-frequency antenna 5 via a matcher 511. From the first high-frequency power source 512, a high-frequency power of, for example, 13.56 MHz is supplied to each of the high-frequency antennas 5 via a matcher 511. Thereby, the processing gas or the static elimination gas supplied into the processing space 100 through the dielectric window can be plasmatized by inductive coupling to perform a desired etching process or static elimination process.
在此，高頻天線5、介電質窗即噴頭31、匹配器511或第1高頻電源512，係相當於用以形成處理氣體或除電氣體之電漿的電漿形成部。 Here, the high-frequency antenna 5, the nozzle 31, which is a dielectric window, the matching device 511, or the first high-frequency power supply 512, correspond to a plasma-forming portion for forming a plasma of a processing gas or a static elimination gas.
另外，電漿形成部的構成，係不限定於具備有形成感應耦合電漿之高頻天線5、介電質窗的情況。亦可採用例如在載置台2與金屬製的噴頭31之間形成電容耦合電漿的 構成。 In addition, the configuration of the plasma forming section is not limited to the case where the high frequency antenna 5 and the dielectric window are provided to form an inductively coupled plasma. It is also possible to use, for example, a capacitor coupling plasma formed between the mounting table 2 and the metal nozzle 31 Make up.
而且，如圖1所示，在該電漿處理裝置1，係設置有控制部6。控制部6，係由具備有未圖示之CPU(Central Processing Unit)與記憶部的電腦所構成，在該記憶部，係記憶編入有用以輸出控制訊號之步驟(命令)群的程式，該控制訊號，係在對配置有基板G的處理空間100內進行真空排氣，且使用高頻天線5來將處理氣體電漿化而處理基板G後，一面進行除電氣體之電漿所致之除電處理，一面執行基板G的上升移動動作。該程式，係被儲存於例如硬碟、光碟、磁光碟、記憶卡等的記憶媒體，並由其來安裝至記憶部。 As shown in FIG. 1, the plasma processing apparatus 1 is provided with a control unit 6. The control unit 6 is composed of a computer including a CPU (Central Processing Unit) and a memory unit (not shown), and the memory unit stores a program incorporated in a group of steps (commands) for outputting control signals. The control The signal is a vacuum evacuation in the processing space 100 in which the substrate G is disposed, and the high-frequency antenna 5 is used to plasma process the substrate G, and then the substrate G is subjected to a static elimination process caused by the plasma of the static elimination gas. While performing the upward movement of the substrate G. The program is stored in a storage medium such as a hard disk, an optical disk, a magneto-optical disk, a memory card, and the like, and is installed in the memory section.
在具備有以上說明之構成的電漿處理裝置1中，當藉由包含有例如SF6氣體(蝕刻氣體)與O2氣體(稀釋氣體)的處理氣體來進行鉬膜之蝕刻處理時，則主要藉由與SF6氣體的反應進行鉬(Mo)之蝕刻。在該反應之際，生成伴隨著SF6與Mo的反應之副生成物(例如MoFxOy，其中，x、y為氟及氧之原子數)。該些副生成物的大部分雖經由排氣口103而被排出至外部，但有其一部分附著、沈積於噴頭31或容器本體10之表面而成為沈積層7的情況。 In the plasma processing apparatus 1 provided with the structure described above, the etching process of the molybdenum film is mainly performed by a processing gas containing, for example, SF 6 gas (etching gas) and O 2 gas (diluent gas). Etching of molybdenum (Mo) is performed by reaction with SF 6 gas. During this reaction, a by-product (for example, MoF x O y where x and y are the number of atoms of fluorine and oxygen) is generated along with the reaction of SF 6 and Mo. Although most of these by-products are discharged to the outside through the exhaust port 103, a part of them may adhere to and deposit on the surface of the shower head 31 or the container body 10 and become the sedimentation layer 7.
另一方面，在進行靜電夾頭22或基板G的除電之際，於處理空間100內形成有O2氣體(除電氣體)之電漿。如圖3示意地表示，即便形成蝕刻氣體或稀釋氣體之單體氣體的電漿，亦大多為相對於被蝕刻膜之蝕刻速度較 小的情況。另一方面，已知可藉由使用以適當之比率來混合該些蝕刻氣體與稀釋氣體之處理氣體的方式，有效率地進行蝕刻處理。 On the other hand, when static electricity is removed from the electrostatic chuck 22 or the substrate G, a plasma of O 2 gas (static electricity gas) is formed in the processing space 100. As shown schematically in FIG. 3, even if a plasma of a single gas of an etching gas or a diluent gas is formed, the etching rate of the film to be etched is usually small. On the other hand, it is known that an etching process can be efficiently performed by using a processing gas in which these etching gases and a diluent gas are mixed at an appropriate ratio.
然而，即便為稀釋氣體之單體的電漿，亦有對被蝕刻膜稍微呈現蝕刻作用的情況。因此，在使基板G上升移動的期間中，當使用稀釋氣體(例如O2氣體)作為形成電漿的除電氣體時，則亦有蝕刻沈積於噴頭31或容器本體10之沈積層7的情況。該結果，如圖7示意所示，有沈積層7被蝕刻而生成反應成分71，隨著經電漿化的除電氣體而浮遊於處理空間100內之虞。 However, even a plasma that is a single diluent gas may slightly etch the film to be etched. Therefore, when the substrate G is moved up and down, when a diluent gas (for example, O 2 gas) is used as the plasma removal gas, the deposition layer 7 deposited on the shower head 31 or the container body 10 may be etched. As a result, as shown schematically in FIG. 7, the deposition layer 7 is etched to generate a reaction component 71, which may float in the processing space 100 with the plasma-eliminated static elimination gas.
在此，形成有除電氣體之電漿，係在使基板G上升移動的期間中，而載置台2(靜電夾頭22)的上面未成為被基板G覆蓋的狀態(載置有基板G的狀態)。又，進行溫度調節的載置台2，係與在蝕刻處理或除電處理之際曝露於電漿的噴頭31或容器本體10相比，相對溫度低。因此，浮遊於處理空間100內的反應成分71，係藉由熱泳動往載置台2側移動，而有再附著於載置台2的表面之虞。 Here, the plasma with a static elimination gas is formed while the substrate G is moved up and down, and the upper surface of the mounting table 2 (electrostatic chuck 22) is not covered by the substrate G (state where the substrate G is placed). ). The temperature of the mounting table 2 is relatively lower than that of the shower head 31 or the container body 10 exposed to the plasma during the etching process or the static elimination process. Therefore, the reaction component 71 floating in the processing space 100 is moved to the mounting table 2 side by thermal swimming, and may adhere to the surface of the mounting table 2 again.
當反應成分71附著於載置台2的表面而形成新的沈積層7時，則變得難以進行設置於載置台2內之前述的溫度控制機構所致之均勻的溫度控制，且亦有蝕刻處理的結果與在基板G之面內成為不均勻之處理不良的發生相關之虞。 When the reaction component 71 is attached to the surface of the mounting table 2 to form a new deposition layer 7, it becomes difficult to perform uniform temperature control by the aforementioned temperature control mechanism provided in the mounting table 2, and an etching process is also performed. The result is related to the occurrence of non-uniform processing defects in the surface of the substrate G.
因此，本例的電漿處理裝置1，係在使基板G上升的期間中，為了抑制附著於處理容器(容器本體10或 噴頭31)之副生成物(沈積層7)與除電氣體之電漿的反應成分71進入至基板G的下方側，而具備有朝向載置台2與基板G所包夾之空間供給抑制進入氣體的機構。 Therefore, in the plasma processing apparatus 1 of this example, in order to suppress adhesion to the processing container (the container body 10 or the container body 10) while the substrate G is being raised. The reaction product 71 of the by-product (deposition layer 7) of the shower head 31) and the plasma of the static elimination gas enters the lower side of the substrate G, and is provided with a means for suppressing the entry of gas into the space sandwiched between the mounting table 2 and the substrate G. mechanism.
抑制進入氣體，係只要可獲得推回欲進入至基板G的下方側之反應成分71的作用，則其氣體種類無特別的限定。例如，在蝕刻處理的期間中，作為熱傳送氣體，亦可從氣體供給路徑212供給被供給至基板G之背面側的He氣體。 The suppression of the gas is not particularly limited as long as the function of pushing back the reaction component 71 to be lowered into the substrate G can be obtained. For example, He gas supplied to the back surface side of the substrate G may be supplied from the gas supply path 212 as a heat transfer gas during the etching process.
另一方面，如在後述的實施例所說明般，越為分子量大且密度高的氣體種類，則抑制反應成分71之進入的效果越高。關於該點，與He氣體(分子量4)或O2氣體(分子量32)相比，例如SF6氣體，係分子量大(分子量146)而適合作為抑制進入氣體。 On the other hand, as described in the examples described later, the effect of suppressing the entry of the reaction component 71 is higher as the gas type having a larger molecular weight and a higher density is obtained. In this regard, compared with He gas (molecular weight 4) or O 2 gas (molecular weight 32), for example, SF 6 gas has a large molecular weight (molecular weight 146), and is suitable as an inhibitor gas.
又，如使用圖3所說明般，藉由與亦作為稀釋氣體之除電氣體(O2氣體)混合的方式，蝕刻氣體即SF6氣體對於沈積層7亦可呈現較高的蝕刻作用。該結果，即便為一部分之反應成分71進入至基板G的下方側而再附著於載置台2之表面的情況下，亦採用SF6氣體作為抑制進入氣體，藉此，在形成有O2氣體之電漿與SF6氣體之混合氣體氛圍的區域中，亦可期待蝕刻去除再附著之反應成分71的作用。 In addition, as described with reference to FIG. 3, the SF 6 gas, which is an etching gas, can also exhibit a high etching effect on the deposited layer 7 by being mixed with a static elimination gas (O 2 gas) also serving as a diluent gas. As a result, even when a reaction component part of 71 into the downward side of the substrate G, and then attached to a case where the mounting surface of the stage 2 of the, also uses SF 6 gas as inhibiting into the gas, thereby, is formed with O 2 gases In a mixed gas atmosphere of plasma and SF 6 gas, the effect of removing the re-adhered reactive component 71 by etching can also be expected.
從該些觀點來看，本例的電漿處理裝置1，係如圖2所示，連接於蝕刻氣體供給部42之流路在流量調節部421的下游側分歧，並經由開關閥V22，分歧管線214匯 流於載置台氣體供給管線213。藉由該構成，在結果蝕刻處理後，使基板G上升移動的期間中，係可將作為抑制進入氣體的SF6氣體從氣體供給路徑212供給至載置台2與基板G所包夾的空間。 From these points of view, as shown in FIG. 2, the plasma processing apparatus 1 of this example is branched on the downstream side of the flow rate adjustment section 421 and connected to the etching gas supply section 42, and branched via the on-off valve V22. The line 214 joins the stage gas supply line 213. With this configuration, during the period in which the substrate G is moved up and down after the etching process, the SF 6 gas, which is an inhibiting gas, can be supplied from the gas supply path 212 to the space sandwiched between the mounting table 2 and the substrate G.
在該觀點中，比蝕刻氣體供給部42、流量調節部421、開關閥V22、分歧管線214、分歧管線214之匯流位置更往下游側的載置台氣體供給管線213、載置台氣體擴散室211或各氣體供給路徑212，係相當於本例的抑制進入氣體供給部。 In this viewpoint, the stage gas supply line 213, the stage gas diffusion chamber 211, or the stage gas supply line 213 further downstream than the confluence position of the etching gas supply part 42, the flow rate adjustment part 421, the switching valve V22, the branch line 214, and the branch line 214, or Each of the gas supply paths 212 corresponds to the entry-inhibited gas supply unit of this example.
參閱圖4~圖7，說明關於具備有上述之構成之電漿處理裝置1的作用。 The operation of the plasma processing apparatus 1 having the above-described configuration will be described with reference to FIGS. 4 to 7.
首先，開啟閘閥102，從鄰接的真空搬送室使搬送機構之搬送臂(皆未圖示)進入，經由搬入搬出口101將基板G搬入至處理空間100內。其次，使升降銷23上升，從搬送臂將基板收授至升降銷23。 First, the gate valve 102 is opened, a transfer arm (none of which is shown) of the transfer mechanism is entered from an adjacent vacuum transfer chamber, and the substrate G is transferred into the processing space 100 through the transfer inlet 101. Next, the lift pin 23 is raised, and the substrate is received from the transfer arm to the lift pin 23.
在從處理空間100使搬送臂退避而關閉閘閥102後，使升降銷23下降，將基板G載置於被設置在載置台2之靜電夾頭22上的吸附保持位置。其次，對未圖示的夾頭電極施加直流電力而吸附保持基板G。 After the transfer arm is retracted from the processing space 100 and the gate valve 102 is closed, the lift pin 23 is lowered, and the substrate G is placed in an adsorption holding position provided on the electrostatic chuck 22 provided on the mounting table 2. Next, a DC power is applied to a chuck electrode (not shown) to suck and hold the substrate G.
然後，開啟蝕刻氣體供給部42之下游的開關閥V21與稀釋氣體供給部41之下游的開關閥V1(在圖4中記載為「O」。以下，關於開啟狀態之開關閥V1、V21、V22、V3亦為相同)，藉由流量調節部421、411進行流量調節，且藉由噴頭31，將以預定比率混合了SF6氣體(蝕 刻氣體)與O2氣體(稀釋氣體)的處理氣體供給至處理空間100內。另一方面，藉由真空排氣部12進行處理空間100內的真空排氣，將處理空間100內調節成例如1.33Pa(10mTorr)左右的壓力氛圍。 Then, the on-off valve V21 downstream of the etching gas supply unit 42 and the on-off valve V1 (described as "O" in FIG. 4) downstream of the diluent gas supply unit 41 are opened. Hereinafter, the on-off valves V1, V21, and V22 are opened. The same applies to V3.) The flow rate is adjusted by the flow rate adjustment units 421 and 411. The nozzle 31 is used to supply a processing gas in which SF 6 gas (etching gas) and O 2 gas (diluent gas) are mixed at a predetermined ratio. Into the processing space 100. On the other hand, the vacuum exhaust in the processing space 100 is performed by the vacuum exhaust unit 12, and the pressure in the processing space 100 is adjusted to a pressure atmosphere of, for example, about 1.33 Pa (10 mTorr).
又，開啟熱傳送氣體供給部43之下游的開關閥V3，進行壓力調節閥431所致之壓力調節，從各氣體供給路徑212將He氣體(熱傳送氣體)供給至被吸附保持於靜電夾頭22上之基板G的背面。此時，連接於蝕刻氣體供給部42之分歧管線214的開關閥V22被關閉(在圖4中記載為「S」。以下，關於關閉狀態之開關閥V1、V21、V22、V3亦相同)。 In addition, the on-off valve V3 downstream of the heat transfer gas supply unit 43 is opened to perform pressure adjustment by the pressure regulating valve 431, and He gas (heat transfer gas) is supplied from each gas supply path 212 to the electrostatic chuck which is adsorbed and held The back side of the substrate G on 22. At this time, the on-off valve V22 connected to the branch line 214 of the etching gas supply unit 42 is closed (referred to as "S" in FIG. 4. Hereinafter, the on-off valves V1, V21, V22, and V3 are also the same).
其次，從第1高頻電源512對高頻天線5施加高頻電力(例如4kW)，藉此，經由介電體窗即噴頭31，藉由感應耦合，將被供給至處理空間100內的處理氣體電漿化(圖5之電漿P)。該結果，進行形成於基板G的表面之鉬膜的蝕刻處理。 Next, high-frequency power (for example, 4 kW) is applied to the high-frequency antenna 5 from the first high-frequency power source 512, and the processing is performed in the processing space 100 by inductive coupling through the nozzle 31, which is a dielectric window. The gas is plasmatized (plasma P in Fig. 5). As a result, an etching process of a molybdenum film formed on the surface of the substrate G is performed.
另外，本例所示之鉬膜的蝕刻，係亦可不進行從第2高頻電源252對載置台2施加偏壓用之高頻電力。在使用第2高頻電源252的情況下，藉由偏壓電力，電漿P中之離子被引入至基板G，亦可進行更高縱橫比的蝕刻處理。 In addition, the etching of the molybdenum film shown in this example does not require the high-frequency power for biasing the mounting table 2 from the second high-frequency power source 252. When the second high-frequency power source 252 is used, the ions in the plasma P are introduced into the substrate G by the bias power, and an etching process with a higher aspect ratio can also be performed.
而且，在僅以預先設定的時間進行蝕刻處理後，停止來自高頻電源512之電力供給、來自蝕刻氣體供給部42、稀釋氣體供給部41之處理氣體供給及來自熱傳送氣體供給 部43之熱傳送氣體的供給。 After the etching process is performed only for a predetermined time, the power supply from the high-frequency power supply 512, the processing gas supply from the etching gas supply unit 42, the diluent gas supply unit 41, and the heat transfer gas supply are stopped. The supply of heat transfer gas from the section 43.
在此，當在容器本體10內對多數片基板G重複進行蝕刻處理時，則有藉由前述的反應機制，在噴頭31或容器本體10之表面附著、沈積有蝕刻處理之際所產生之副生成物而成為沈積層7的情況(圖5)。 Here, when a plurality of substrates G are repeatedly etched in the container body 10, there is a side effect generated when the etching process is attached to and deposited on the surface of the shower head 31 or the container body 10 by the aforementioned reaction mechanism. The case where the product becomes the sedimentation layer 7 (FIG. 5).
其次，說明關於從形成有沈積層7的容器本體10內搬出結束了蝕刻處理之基板G的動作。 Next, an operation of carrying out the substrate G after the etching process is carried out from the container body 10 in which the deposition layer 7 is formed will be described.
蝕刻處理結束後，開啟被連接於噴淋氣體供給管線32的開關閥V1，從稀釋氣體供給部41經由噴頭31供給O2氣體，將處理空間100內的壓力氛圍調節成1.33~13.3Pa(10~100mTorr)左右。此時，蝕刻氣體供給部42側的開關閥V21為關閉狀態，不進行從蝕刻氣體供給部42對噴頭31之SF6氣體的供給。 After the etching process is completed, the on-off valve V1 connected to the shower gas supply line 32 is opened, and O 2 gas is supplied from the diluent gas supply unit 41 through the shower head 31, and the pressure atmosphere in the processing space 100 is adjusted to 1.33 to 13.3 Pa (10 ~ 100mTorr). At this time, the on-off valve V21 on the side of the etching gas supply unit 42 is closed, and the supply of the SF 6 gas from the etching gas supply unit 42 to the shower head 31 is not performed.
然後，當停止對靜電夾頭22之夾頭電極施加的直流電力時，則由於靜電夾頭22側之電荷消失(直流電位變低)，因此，在基板G側發生直流放電，該基板G被除電而解除對靜電夾頭22之吸附。 Then, when the DC power applied to the chuck electrode of the electrostatic chuck 22 is stopped, the electric charge on the side of the electrostatic chuck 22 disappears (the DC potential becomes low), so a DC discharge occurs on the substrate G side, and the substrate G is Elimination of electricity removes the adsorption of the electrostatic chuck 22.
其次，當從第1高頻電源512對高頻天線5施加高頻電力(例如4kW)時，則除電氣體藉由感應耦合而電漿化(圖5之電漿P’)。該結果，經由電漿P’，靜電夾頭22與容器本體10短路，靜電夾頭22表面的殘留電荷被除電。 Next, when high-frequency power (for example, 4 kW) is applied to the high-frequency antenna 5 from the first high-frequency power source 512, the static elimination gas is plasmatized by inductive coupling (plasma P 'in FIG. 5). As a result, the electrostatic chuck 22 is short-circuited with the container body 10 via the plasma P ', and the residual charge on the surface of the electrostatic chuck 22 is removed.
其後，使升降銷23上升而舉起基板G，並使基板G從吸附保持位置上升移動至基板朝搬送臂收授的收授 位置。即便在該期間中，除電氣體之電漿所致之除電處理，係亦持續直至除電氣體之電漿包覆至基板G的背面。其結果，基板G之除電處理結束。另外，在該些除電處理的期間中，係不需要進行從第2高頻電源252施加偏壓用之高頻電力。 After that, the lifting pin 23 is raised to lift the substrate G, and the substrate G is moved upward from the adsorption holding position to the receiving and receiving of the substrate toward the transfer arm. position. Even during this period, the static elimination treatment by the plasma of the static elimination gas is continued until the plasma of the static elimination gas covers the back surface of the substrate G. As a result, the static elimination process of the substrate G is completed. In addition, during the period of these static elimination processes, it is not necessary to perform high-frequency power for applying a bias voltage from the second high-frequency power source 252.
另一方面，如前述般，當在形成有沈積層7的容器本體10內形成除電氣體之電漿時，則如圖7所示，有從稍微經蝕刻之沈積層7產生反應成分71的情況。該反應成分71，係藉由熱泳動而往載置台2側移動。 On the other hand, as described above, when a plasma of a static elimination gas is formed in the container body 10 in which the deposition layer 7 is formed, as shown in FIG. 7, a reactive component 71 may be generated from the slightly etched deposition layer 7. . This reaction component 71 moves to the mounting table 2 side by thermal swimming.
此時，從氣體供給路徑212，朝向上升移動之基板G與載置台2所包夾的空間供給抑制進入氣體即SF6氣體，藉此，欲進入至基板G之下方側的反應成分71被SF6氣體的流動推回。該結果，可防止伴隨著基板G之上升移動而附著於所露出之載置台2的表面之情況。 At this time, from the gas supply path 212, the space enclosed between the substrate G and the mounting table 2 moving upward is supplied with SF 6 gas, which is an inhibiting gas, and the reaction component 71 intended to enter the lower side of the substrate G is SF. 6 The flow of gas is pushed back. As a result, it is possible to prevent the substrate G from adhering to the exposed surface of the mounting table 2 as the substrate G moves upward.
在形成有除電氣體即O2氣體之電漿與抑制進入氣體即SF6氣體之混合氣體氛圍的區域中，即便為反應成分71之一部分再附著於載置台2的情況下，亦藉由可蝕刻反應成分71的混合氣體去除該反應成分71。 In a region where a mixed gas atmosphere of a plasma of O 2 gas, which is a static elimination gas, and an SF 6 gas which inhibits entry, is formed, even if a part of the reaction component 71 is reattached to the mounting table 2, it can be etched. The mixed gas of the reaction component 71 removes the reaction component 71.
如此一來，在並行地進行除電氣體之電漿所致之靜電夾頭22或基板G的除電處理與抑制反應成分71附著於載置台2的同時，基板G到達至收授位置而充分地實施除電處理後，停止來自高頻電源512之電力供給、來自稀釋氣體供給部41之除電氣體供給及來自蝕刻氣體供給部42之抑制進入氣體的供給。 In this way, while the static elimination treatment of the electrostatic chuck 22 or the substrate G caused by the plasma of the static elimination gas and the suppression of the reaction component 71 from adhering to the mounting table 2 are performed in parallel, the substrate G reaches the receiving position and is fully implemented. After the static elimination process, the power supply from the high-frequency power supply 512, the supply of the static elimination gas from the diluent gas supply unit 41, and the supply of the suppression gas from the etching gas supply unit 42 are stopped.
然後，在進行了使容器本體10內的壓力配合鄰接之真空搬送室的壓力之壓力調節後，開啟閘閥102，使搬送臂進入，將處理後的基板G從升降銷23收授至搬送臂，從電漿處理裝置1搬出基板G。 Then, after adjusting the pressure in the container body 10 to the pressure of the adjacent vacuum transfer chamber, the gate valve 102 is opened to allow the transfer arm to enter, and the processed substrate G is transferred from the lift pin 23 to the transfer arm. The substrate G is carried out from the plasma processing apparatus 1.
根據本實施形態之電漿處理裝置1，具有以下效果。在蝕刻處理後之基板G之搬送動作的期間中，在容器本體10內形成除電氣體之電漿時，將抑制進入氣體供給至載置台2與基板G之間的空間。該結果，由於因除電氣體之電漿所產生的反應成分71進入基板G之下方側被抑制，因此，可抑制反應成分71附著於載置台2。而且，可維持被設置於載置台2的溫度控制機構所致之溫度控制性能，且可執行面內均勻性高的蝕刻處理。 The plasma processing apparatus 1 according to this embodiment has the following effects. During the transfer operation of the substrate G after the etching process, when the plasma of the static elimination gas is formed in the container body 10, the suppression gas is supplied to the space between the mounting table 2 and the substrate G. As a result, entry of the reaction component 71 generated by the plasma of the static elimination gas into the lower side of the substrate G is suppressed, so that the adhesion of the reaction component 71 to the mounting table 2 can be suppressed. In addition, the temperature control performance by the temperature control mechanism provided on the mounting table 2 can be maintained, and an etching process with high in-plane uniformity can be performed.
在此，如前述般，載置台2，係藉由經耐酸鋁處理而在表面形成有鈍態膜的鋁所構成，與碳或樹脂相比，對O2氣體之電漿具備有高耐腐蝕性。因此，在使用藉由對電漿具備有耐腐蝕性的材料所構成之載置台2的情況下，在進行利用了除電氣體之電漿的除電處理之際，對載置台2與基板G所包夾之空間進行抑制進入氣體的供給，係從防止腐蝕的觀點來看，並不需要實施且乍看下只是無謂的行為而已。 Here, as aforesaid, the mounting table 2, the aluminum-based by passive film formed on a surface constituted by the alumite treatment, as compared with carbon or resin, the O 2 gas plasma to have a high corrosion resistance comprising Sex. Therefore, when the mounting table 2 made of a material having a corrosion resistance to the plasma is used, when performing a static elimination process using a plasma using a static elimination gas, the mounting table 2 and the substrate G are covered. From the viewpoint of preventing corrosion, it is not necessary to implement the suppression of the supply of intrusive gas in the space between them, and at first glance, it is just useless behavior.
對此，本發明者新發現到如下述之課題：因蝕刻處理之際所產生之副生成物的沈積層7與除電用之電漿而產生反應成分71，在基板G上升移動的期間中，有附著於載置台2的表面之虞。而且，本發明，係闡明如下述 之技術：即便為藉由對除電用氣體之電漿具備有耐腐蝕性之材料所構成的載置台2，亦可藉由進行抑制進入氣體之供給的方式，解決上述之課題的技術。 In this regard, the present inventors have newly discovered the following problem: The reaction component 71 is generated by the deposition layer 7 of by-products generated during the etching process and the plasma for static elimination, and during the period when the substrate G moves upward, There is a possibility that it may adhere to the surface of the mounting table 2. The present invention is explained as follows Technology: Even if the mounting table 2 is made of a material having corrosion resistance to the plasma of the gas for static elimination, the above-mentioned problem can be solved by suppressing the supply of ingress gas.
在此，可利用來蝕刻鉬膜的處理氣體，係不限定於SF6氣體(蝕刻氣體)與O2氣體(稀釋氣體)的組合。例如，可使用四氟化碳(CF4)氣體等之氟系的氣體作為蝕刻氣體。又，亦可使用氮(N2)氣或氬(Ar)氣等的惰性氣體作為稀釋氣體。 Here, the processing gas that can be used to etch the molybdenum film is not limited to the combination of SF 6 gas (etching gas) and O 2 gas (diluent gas). For example, a fluorine-based gas such as a carbon tetrafluoride (CF 4 ) gas can be used as the etching gas. An inert gas such as nitrogen (N 2 ) gas or argon (Ar) gas may be used as the diluent gas.
而且，由於除電氣體，係只要可使除電對象的靜電夾頭22或基板G與容器本體10短路即可，因此，除了O2氣體以外，亦可使用N2氣體或Ar氣體。 In addition, since the static elimination gas is only required to short-circuit the electrostatic chuck 22 or the substrate G of the static elimination object with the container body 10, N 2 gas or Ar gas may be used in addition to O 2 gas.
因此，關於可藉由該些除電氣體之電漿的混合來去除附著於靜電夾頭22之鉬的反應成分71之抑制進入氣體的氣體種類，亦不限定於SF6氣體，亦可採用CF4氣體等的蝕刻氣體。 Therefore, the type of the gas that can suppress the entry of the reactive component 71 of the molybdenum attached to the electrostatic chuck 22 by the mixing of the plasma of these static elimination gases is not limited to SF 6 gas, and CF 4 can also be used. Etching gas such as gas.
以上，雖具體列舉了被蝕刻膜為鉬膜的情況下之處理氣體(蝕刻氣體、稀釋氣體)、抑制進入氣體的選擇例，但在以其他膜種類作為被蝕刻膜的情況下，同樣的想法亦成立。亦即，採用該膜種類之蝕刻氣體作為抑制進入氣體並採用稀釋氣體作為除電氣體，藉此，即使為來自該膜種類之副生成物與除電氣體之電漿的反應成分71附著於載置台2之表面的情況下，亦可發揮去除該反應成分71的效果。 In the above, although specific examples of the processing gas (etching gas, diluent gas) and the suppression of ingress gas in the case where the film to be etched is a molybdenum film have been specifically listed, the same idea is used when other film types are used as the film to be etched Also established. That is, an etching gas of the film type is used as the suppression gas and a diluent gas is used as the static elimination gas, whereby the reaction component 71 of the plasma from a byproduct of the film type and the static elimination gas is attached to the mounting table 2 In the case of the surface, the effect of removing the reaction component 71 can also be exhibited.
又，可利用作為抑制進入氣體的氣體種類， 係不限定於對形成於基板G之表面的膜種類具有蝕刻作用者。只要可獲得推回欲進入至基板G的下方側之反應成分71的作用，則亦可為He氣體或N2氣體、Ar氣體等的惰性氣體。即便在該情況下，當採用分子量大於與反應成分71欲同時進入至基板G的下方側之除電氣體之電漿的氣體種類時，則可發揮更高的推回效果。 In addition, the kind of gas that can be used as a suppressing gas is not limited to those having an etching effect on the kind of film formed on the surface of the substrate G. An inert gas such as a He gas, an N 2 gas, or an Ar gas may be used as long as a function of pushing back the reaction component 71 to enter the lower side of the substrate G can be obtained. Even in this case, when a gas type having a molecular weight larger than that of the static elimination gas that is intended to enter the lower side of the substrate G at the same time as the reaction component 71 is used, a higher push-back effect can be exhibited.
又，藉由除電氣體之電漿，需要進行靜電夾頭22或基板G之除電的電漿處理，係不限定於蝕刻處理。即便在將薄膜形成於基板G上之成膜處理、光阻膜之灰化處理等的各種電漿處理中，亦進行使用了除電氣體之電漿的除電處理。此時，在沈積層7附著於容器本體10等的表面而於除電處理之際產生反應成分71的情況下，對載置台2與基板G所包夾的空間供給抑制進入氣體之本發明，係可發揮與使用圖7所說明之例子相同的效果。 In addition, the plasma treatment of the electrostatic chuck 22 or the substrate G by the plasma of the static elimination gas is not limited to the etching process. Even in various plasma treatments, such as a film formation process in which a thin film is formed on a substrate G, and a ashing process of a photoresist film, a static elimination process using a plasma using a static elimination gas is performed. At this time, when the sedimentation layer 7 is attached to the surface of the container body 10 or the like and a reactive component 71 is generated during the static elimination treatment, the present invention for supplying a space for suppressing entry of gas to the space sandwiched between the mounting table 2 and the substrate G is The same effect as that of the example described with reference to FIG. 7 can be exhibited.
在該些情況下，亦可採用成膜處理或灰化處理的氣體即成膜氣體或灰化氣體的稀釋氣體作為除電氣體。又，亦可採用對藉由成膜處理所成膜之膜具有蝕刻作用的氣體種類作為抑制進入氣體。 In these cases, the film-forming gas or the ashing gas, that is, the film-forming gas or the dilution gas of the ashing gas, may be used as the static elimination gas. In addition, the type of gas having an etching effect on the film formed by the film-forming process may be used as the suppression gas.
又，在上述的實施形態中，雖係藉由從第1高頻電源512對高頻天線5施加高頻電力的方式，形成了除電氣體之電漿，但電漿之形成手法並不限定於此。例如亦可從供給偏壓用之高頻電力的第2高頻電源252對載置台2施加高頻電力，而在基板G與靜電夾頭22間的間隙形成除電氣體之電漿。在該情況下，由於可縮短電漿照射時間，因 此，可獲得進一步抑制副生成物附著於靜電夾頭22表面的效果。 Moreover, in the above-mentioned embodiment, although the plasma of the static elimination gas was formed by applying high-frequency power to the high-frequency antenna 5 from the first high-frequency power source 512, the method of forming the plasma is not limited to this. For example, high-frequency power may be applied to the mounting table 2 from the second high-frequency power source 252 that supplies high-frequency power for bias voltage, and a plasma of a static elimination gas may be formed in the gap between the substrate G and the electrostatic chuck 22. In this case, since the plasma irradiation time can be shortened, As a result, the effect of further suppressing the adhesion of by-products to the surface of the electrostatic chuck 22 can be obtained.
而且，可在本發明之電漿處理裝置1中進行處理的基板G，係不限於FPD用之基板G，亦可應用於對太陽能板用之基板G實施上述之各種電漿處理的情況。 Furthermore, the substrate G that can be processed in the plasma processing apparatus 1 of the present invention is not limited to the substrate G for FPD, but can also be applied to the case where the above-mentioned various plasma processing is performed on the substrate G for solar panels.
在配置了鉬板的容器本體10內形成基板G之除電氣體之電漿，改變氣體種類而將抑制進入氣體供給至載置台2與基板G之間，以確認鉬之反應成分71的抑制進入效果。 A plasma of a static elimination gas of the substrate G is formed in the container body 10 in which the molybdenum plate is arranged, and the type of the gas is changed to supply a suppression gas between the mounting table 2 and the substrate G to confirm the suppression effect of the reaction component 71 of molybdenum .
在圖1所示之電漿處理裝置1的容器本體10內，與載置台2之上面相距1mm的間隙而配置有基板G。在基板G的表面及容器本體10的內側壁面貼附鉬板，供給混合了蝕刻氣體(SF6氣體)/稀釋氣體(O2氣體)=500sccm(0℃、1氣壓之標準狀態基準。以下為相同)/1000sccm之處理氣體，以各2分鐘對高頻天線5施加4kW高頻電力總計20次，而在容器本體10內形成了鉬之沈積氛圍。容器本體10內之壓力，係調節成1.33Pa(10mTorr)。 In the container body 10 of the plasma processing apparatus 1 shown in FIG. 1, a substrate G is disposed with a gap of 1 mm from the upper surface of the mounting table 2. A molybdenum plate is affixed to the surface of the substrate G and the inner wall surface of the container body 10, and a standard state standard in which an etching gas (SF 6 gas) / diluent gas (O 2 gas) = 500 sccm (0 ° C and 1 atmosphere) is supplied. The same) / 1000 sccm of processing gas was applied to the high-frequency antenna 5 with 4 kW of high-frequency power 20 times for 2 minutes each, and a molybdenum deposition atmosphere was formed in the container body 10. The pressure in the container body 10 was adjusted to 1.33 Pa (10 mTorr).
(實施例1-1)自氣體供給路徑212，對載置台2與基板G之間的間隙供給200Sccm之He氣體(分子量4)作為抑 制進入氣體，測定了附著有主要為藍色之反應成分71的區域之來自載置台本體21之底色的色彩變化量r。色彩變化量r，係在將前述藍色區域之影像資料的RGB色階資料(各8位元、256色階)設成為R、G、B，並將前述底色的色階資料設成為R’、G’、B’時，利用r={(R-R’)2+(G-G’)2+(B-B’)2}0.5的式子來算出。反應成分71之附著量越多，則色彩變化量r的值越大。而且，計測了附著於載置台2的周緣部之主要為黃色之反應成分71的附著寬度。另外，反應成分71的顏色差異，係因附著於各區域之反應成分71的分子構造的差異所致者。 (Example 1-1) From the gas supply path 212, a 200 Sccm He gas (molecular weight 4) was supplied to the gap between the mounting table 2 and the substrate G as a suppression gas, and a reaction component 71 mainly blue was measured. The amount of color change r from the ground color of the mounting table body 21 in the region of. The color change amount r is to set the RGB color gradation data (each 8-bit, 256 color gradation) of the image data of the blue area to R, G, and B, and set the color gradation data of the background color to R. In the case of ', G', and B ', it is calculated using the formula r = {(R-R') 2 + (G-G ') 2 + (B-B') 2 } 0.5 . The larger the adhesion amount of the reaction component 71, the larger the value of the color change amount r. In addition, the adhesion width of the main yellow reaction component 71 attached to the peripheral portion of the mounting table 2 was measured. The color difference of the reaction component 71 is caused by the difference in the molecular structure of the reaction component 71 attached to each region.
(實施例1-2)除了使用了N2氣體(分子量28)作為抑制進入氣體該點以外，其餘係進行與實施例1-1同樣的實施。 (Example 1-2) Except that N 2 gas (molecular weight 28) was used as the suppression gas, the same procedure was performed as in Example 1-1.
(實施例1-3)除了使用了SF6氣體(分子量146)作為抑制進入氣體該點以外，其餘係進行與實施例1-1同樣的實施。 (Example 1-3) Except that SF 6 gas (molecular weight 146) was used as the suppression gas, the same procedures as in Example 1-1 were performed.
(比較例)除了未進行抑制進入氣體之供給該點以外，其餘係進行與實施例1-1同樣的實驗。 (Comparative example) The same experiment as in Example 1-1 was carried out except that the supply of the inhibited gas was not performed.
在表1中，表示實施例1-1~1-3及比較例的結果。 Table 1 shows the results of Examples 1-1 to 1-3 and Comparative Examples.
據表1之結果，與未進行抑制進入氣體之供給的比較例相比，在將抑制進入氣體供給至載置台2與基板G之間的實施例1-1~1-3中，係藍色區域的色彩變化量r較小且黃色區域的附著寬度亦狹窄。因此可確認到，藉由供給抑制進入氣體的方式，可發揮抑制反應成分71之附著的作用效果。 According to the results in Table 1, compared with the comparative example in which the supply of the suppression gas was not performed, in Examples 1-1 to 1-3 in which the suppression gas was supplied between the mounting table 2 and the substrate G, the color was blue. The amount of color change r in the region is small and the adhesion width of the yellow region is also narrow. Therefore, it was confirmed that the effect of suppressing the adhesion of the reaction component 71 can be exhibited by supplying the method of suppressing the entry of gas.
又，當將實施例1-1~1-3中之藍色區域的色彩變化量r進行比較時，則隨著抑制進入氣體之分子量越大，色彩變化量r的值越小。因此，已知在供給了相同量之抑制進入氣體的情況下，係越為分子量大的氣體種類，則抑制反應成分71之進入的效果越高。 In addition, when the color change amount r of the blue region in Examples 1-1 to 1-3 is compared, the larger the molecular weight of the inhibited entering gas is, the smaller the value of the color change amount r is. Therefore, it is known that when the same amount of ingress-inhibiting gas is supplied, the greater the molecular weight of the gas type, the higher the effect of inhibiting the ingress of the reaction component 71.
而且，在使用了SF6氣體作為抑制進入氣體的實施例1-3中，載置台2的周緣部中之主要為黃色的反應成分71附著寬度為0。吾人認為，此為供給至容器本體10內的處理氣體(SF6氣體/O2氣體=500sccm/1000sccm)與抑制進入氣體(SF6氣體)被混合，而發揮蝕刻去除反應成分71的作用。 Furthermore, in Examples 1-3 in which SF 6 gas was used as the suppression gas, the reaction component 71 mainly having a yellow color in the peripheral portion of the mounting table 2 had an adhesion width of 0. In my opinion, this is a process gas (SF 6 gas / O 2 gas = 500 sccm / 1000 sccm) and an incoming gas (SF 6 gas) supplied into the container body 10 to be mixed to play a role of removing the reaction component 71 by etching.
1‧‧‧電漿處理裝置 1‧‧‧ Plasma treatment device
2‧‧‧載置台 2‧‧‧mounting table
5‧‧‧高頻天線 5‧‧‧ high frequency antenna
6‧‧‧控制部 6‧‧‧Control Department
10‧‧‧容器本體 10‧‧‧ container body
21‧‧‧載置台本體 21‧‧‧mounting table body
23‧‧‧升降銷 23‧‧‧ Lifting Pin
31‧‧‧噴頭 31‧‧‧Nozzle
32‧‧‧噴淋氣體供給管線 32‧‧‧Spray gas supply line
41‧‧‧稀釋氣體供給部 41‧‧‧Diluted gas supply department
42‧‧‧蝕刻氣體供給部 42‧‧‧Etching gas supply department
43‧‧‧熱傳送氣體供給部 43‧‧‧Heat transfer gas supply unit
50‧‧‧天線室 50‧‧‧ Antenna Room
100‧‧‧處理空間 100‧‧‧ processing space
101‧‧‧搬入搬出口 101‧‧‧ moved in and out
102‧‧‧閘閥 102‧‧‧Gate Valve
104‧‧‧整流板 104‧‧‧ Rectifier
211‧‧‧載置台氣體擴散室 211‧‧‧stage gas diffusion chamber
212‧‧‧氣體供給路徑 212‧‧‧Gas supply path
213‧‧‧載置台氣體供給管線 213‧‧‧Gas supply line
214‧‧‧分歧管線 214‧‧‧Different pipeline
311‧‧‧噴淋氣體擴散室 311‧‧‧spray gas diffusion chamber
312‧‧‧噴淋氣體吐出孔 312‧‧‧spray gas outlet
411‧‧‧流量調節部 411‧‧‧Flow Regulation Department
421‧‧‧流量調節部 421‧‧‧Flow Regulation Department
431‧‧‧壓力調節閥 431‧‧‧pressure regulating valve
G‧‧‧基板 G‧‧‧ substrate
V1‧‧‧開關閥 V1‧‧‧On-off valve
V3‧‧‧開關閥 V3‧‧‧ On-off valve
V21‧‧‧開關閥 V21‧‧‧On-off valve
V22‧‧‧開關閥 V22‧‧‧On-off valve
Claims (14)
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| US11521884B2 (en) | 2018-06-29 | 2022-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrostatic chuck sidewall gas curtain |
| CN108774731A (en) * | 2018-07-31 | 2018-11-09 | 湖南玉丰真空科学技术有限公司 | A kind of vacuum coating equipment vacuum chamber substrate frame elevating mechanism |
| US11837492B2 (en) | 2020-05-11 | 2023-12-05 | Entegris, Inc. | Electrostatic chuck having a gas flow feature, and related methods |
| JP2022024265A (en) * | 2020-07-13 | 2022-02-09 | 東京エレクトロン株式会社 | Substrate detachment method and plasma processing device |
| KR20240019752A (en) * | 2022-08-03 | 2024-02-14 | 주식회사 히타치하이테크 | Wafer processing method |
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