TW201809598A - Method of obtaining deviation angle - Google Patents

Method of obtaining deviation angle Download PDF

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TW201809598A
TW201809598A TW105115301A TW105115301A TW201809598A TW 201809598 A TW201809598 A TW 201809598A TW 105115301 A TW105115301 A TW 105115301A TW 105115301 A TW105115301 A TW 105115301A TW 201809598 A TW201809598 A TW 201809598A
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mark
substrate
sub
obtaining
offset angle
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TW105115301A
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TWI596319B (en
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陳禾貴
韓心瑜
黃志騰
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凌巨科技股份有限公司
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Abstract

A method of obtaining a deviation angle including following steps is provided. An apparatus is provided. The apparatus includes a first substrate and a second substrate respectively having a first mark and a second mark. A reference point located on the first substrate is obtained, and the reference point does not overlap with the first mark or the second mark. The reference point is defined as an original point (x0,y0) of an X-Y coordinate. A value of a parallel deviation [Delta][delta]x and a value of a vertical deviation [Delta][delta]y are obtained. A first deviation angle [Delta][theta] between the first substrate and the second substrate is calculated by a first formula. The first formula is[Delta][theta]=tan<SP>-1</SP>[y1-[Delta][delta]y/X1-[Delta][delta]X]-[theta]0, wherein [theta]0 is an included angle between a X axis of the X-Y coordinate and a line connecting a geometry center of the second mark and the reference point.

Description

取得偏移角度的方法How to get the offset angle

本發明是有關於一種方法,且特別是有關於一種取得偏移角度的方法。The present invention relates to a method, and particularly to a method of obtaining an offset angle.

多種裝置包括需對位的二基板。二基板間的對位情況會影響裝置的品質。舉例而言,顯示面板包括畫素陣列基板、相對於畫素陣列基板的對向基板以及位於兩者間的顯示介質。畫素陣列基板與對向基板間的對位情況會影響顯示面板的光學特性。Various devices include two substrates to be aligned. The alignment between the two substrates will affect the quality of the device. For example, the display panel includes a pixel array substrate, an opposite substrate relative to the pixel array substrate, and a display medium located between the two. The alignment between the pixel array substrate and the counter substrate will affect the optical characteristics of the display panel.

一般而言,為判斷畫素陣列基板與對向基板間的對位情況,顯示面板具有水平組立精度標記與垂直平組立精度標記。藉由水平組立精度標記可得知畫素陣列基板與對向基板在x方向上的偏移量。藉由垂直組立精度標記可得知畫素陣列基板與對向基板在y方向上的偏移量。然而,藉由水平組立精度標記與垂直組立精度標記,不易得知畫素陣列基板與對向基板間的偏移角度。尤其,當顯示面板為邊緣場切(Fringe-Field Switching,FFS)或共面切換(In-Plane Switching,IPS)模式時,畫素陣列基板與對向基板之間的偏移轉角度對顯示面板的光學品質(例如:對比)影響甚鉅。若無法即時監測畫素陣列基板與對向基板之間的偏移角度,不利顯示面板的品質管控與分級。Generally speaking, in order to determine the alignment between the pixel array substrate and the counter substrate, the display panel has a horizontal assembly precision mark and a vertical flat assembly precision mark. By horizontally setting the precision marks, the offset of the pixel array substrate and the counter substrate in the x direction can be known. By vertically assembling the precision marks, the offset of the pixel array substrate and the counter substrate in the y direction can be known. However, with the horizontally assembled precision marks and the vertically assembled precision marks, it is difficult to know the offset angle between the pixel array substrate and the counter substrate. In particular, when the display panel is in Fringe-Field Switching (FFS) or In-Plane Switching (IPS) mode, the offset rotation angle between the pixel array substrate and the opposite substrate changes to the display panel The optical quality (for example: contrast) has a huge impact. If the offset angle between the pixel array substrate and the counter substrate cannot be monitored in real time, it is unfavorable for the quality control and classification of the display panel.

本發明提供一種取得偏移角度的方法,其可簡易地取得第一、二基板間的偏移角度。The invention provides a method for obtaining an offset angle, which can easily obtain the offset angle between the first and second substrates.

本發明的取得偏移角度的方法,包括下列步驟。提供裝置。裝置包括相重疊的第一基板與第二基板。第一基板具有第一標記。第二基板具有第二標記。第二標記包括多個子標記。子標記在相垂直的x方向與y方向上排成一陣列。取得位於第一基板上的參考點,參考點不與第一標記或第二標記重疊。令參考點為 XY座標系的原點(x0 ,y0 )。XY座標系的 X軸與x方向平行。XY座標系的 Y軸與y方向平行。取得第二標記的幾何中心在XY座標系上的座標(xc ,yc )。利用座標(xc ,yc )與第二標記的子標記計算出第一標記在XY座標系上的座標(x1 ,y1 )。取得第一基板與第二基板之間的水平偏移量△δx與垂直偏移量△δy。利用下列式(1):,計算出第一基板與第二基板之間的第一偏移角度△θ,其中θ0 為XY座標系的X軸與參考點和第二標記幾何中心之連線的夾角。The method for obtaining the offset angle of the present invention includes the following steps. Provide the device. The device includes a first substrate and a second substrate that overlap. The first substrate has a first mark. The second substrate has a second mark. The second mark includes multiple sub-marks. The sub-marks are arranged in an array in the x direction and the y direction perpendicular to each other. Obtaining a reference point on the first substrate, the reference point does not overlap with the first mark or the second mark. Let the reference point be the origin of the XY coordinate system (x 0 , y 0 ). The X axis of the XY coordinate system is parallel to the x direction. The Y axis of the XY coordinate system is parallel to the y direction. Obtain the coordinates (x c , y c ) of the geometric center of the second mark on the XY coordinate system. The coordinates (x 1 , y 1 ) of the first mark on the XY coordinate system are calculated using the coordinates (x c , y c ) and the sub-marks of the second mark. Obtain the horizontal offset Δδx and the vertical offset Δδy between the first substrate and the second substrate. Use the following formula (1): Calculate the first offset angle Δθ between the first substrate and the second substrate, where θ 0 is the angle between the X axis of the XY coordinate system and the line connecting the reference point and the geometric center of the second mark.

在本發明的一實施例中,上述所有子標記的尺寸相同,每一子標記在x方向及y方向上分別具有第一寬度W1與第二寬度W2,而利用第二標記幾何中心的座標(xc ,yc )與多個子標記計算出第一標記在XY座標系上的座標(x1 ,y1 )的步驟包括:找出與第一標記重疊的一個子標記,所述子標記與第二標記的幾何中心在x方向上差距n個子標記的距離,所述子標記與第二標記的幾何中心在y方向差距m個子標記的距離,其中n、m為整數;利用式(2):與式(3):,計算出第一標記在XY座標系上的座標(x1 ,y1 )。In an embodiment of the present invention, all the sub-marks have the same size, and each sub-mark has a first width W1 and a second width W2 in the x direction and the y direction, respectively, and uses the coordinates of the geometric center of the second mark ( x c , y c ) and a plurality of sub-marks, the step of calculating the coordinates (x 1 , y 1 ) of the first mark on the XY coordinate system includes: finding a sub-mark that overlaps with the first mark, the sub-mark and The geometric center of the second mark is distanced by n sub-marks in the x direction, and the geometric center of the second mark is distanced by m sub-marks in the y direction, where n and m are integers; use formula (2) : And formula (3): , Calculate the coordinates of the first mark on the XY coordinate system (x 1 , y 1 ).

在本發明的一實施例中,上述的第一基板更具有水平組立精度標記與垂直組立精度標記,而取得位於第一基板上的參考點的步驟包括:令通過水平組立精度標記之延伸線與通過垂直組立精度標記之延伸線的交點為參考點。In an embodiment of the invention, the above-mentioned first substrate further has a horizontal assembly precision mark and a vertical assembly precision mark, and the step of obtaining the reference point on the first substrate includes: letting the extension line passing the horizontal assembly precision mark and The intersection point of the extension line passing through the vertical assembly precision mark is the reference point.

在本發明的一實施例中,上述的參考點與第二標記之幾何中心的距離R為預設值,而第二標記幾何中心之座標(xc ,yc )的xc 與yc 分別滿足下式(4):與式(5):In an embodiment of the present invention, the distance R between the reference point and the geometric center of the second mark is a preset value, and the x c and y c of the coordinates (x c , y c ) of the geometric center of the second mark are respectively Meet the following formula (4): And formula (5): .

在本發明的一實施例中,上述的第二標記為棋盤格圖案。棋盤格圖案包括在x方向與y方向上交替排列的多個遮光區塊與多個透光區塊,而第一標記為面積小於每一遮光區塊及每一透光區塊的一個點狀圖案。In an embodiment of the invention, the above-mentioned second mark is a checkerboard pattern. The checkerboard pattern includes a plurality of light-shielding blocks and a plurality of light-transmitting blocks alternately arranged in the x-direction and the y-direction, and the first mark is a dot-shaped area smaller than each light-shielding block and each light-transmitting block pattern.

在本發明的一實施例中,上述的第二標記為棋盤格圖案。棋盤格圖案包括在x方向與y方向上交替排列的多個遮光區塊與多個透光區塊。第一標記為菱形。菱形的邊長大於或等於每一遮光區塊的邊長以及每一透光區塊的邊長。In an embodiment of the invention, the above-mentioned second mark is a checkerboard pattern. The checkerboard pattern includes a plurality of light-shielding blocks and a plurality of light-transmitting blocks alternately arranged in the x direction and the y direction. The first mark is a diamond. The side length of the diamond is greater than or equal to the side length of each light-blocking block and the side length of each light-transmitting block.

在本發明的一實施例中,上述的取得偏移角度的方法,更包括:量測第二標記之幾何中心正下方的第一基板與第二基板之間的間隙zc 以及第一標記正上方的第一基板與第二基板之間的間隙z1 ;利用下式(6)取得一第二偏移角度△Φ,----(6)。In an embodiment of the invention, the above method for obtaining the offset angle further includes: measuring the gap z c between the first substrate and the second substrate directly below the geometric center of the second mark and the positive mark The gap z 1 between the first substrate and the second substrate above; use the following formula (6) to obtain a second offset angle ΔΦ, ---- (6).

在本發明的一實施例中,上述的裝置為邊緣場切換(Fringe Field Switching,FFS)模式或共面切換(In-Plane Switching,IPS)模式的液晶顯示裝置。In an embodiment of the present invention, the above device is a liquid crystal display device in a fringe field switching (FFS) mode or an in-plane switching (IPS) mode.

基於上述,利用本發明一實施例之取得偏移角度的方法,可簡易地獲得任一裝置之第一、二基板間的偏移角度。利用偏移角度可更精確地監測裝置的品質並將其分級。Based on the above, the method for obtaining the offset angle according to an embodiment of the present invention can easily obtain the offset angle between the first and second substrates of any device. The offset angle can be used to more accurately monitor and classify the quality of the device.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below and described in detail in conjunction with the accompanying drawings.

圖1為本發明一實施例之裝置的剖面示意圖。圖2為本發明一實施例之第一、二基板的第一、二標記及其附近區域的上視示意圖。以下利用圖1、圖2舉例說明如何取得第一、二基板100、200之間的偏移角度。FIG. 1 is a schematic cross-sectional view of an apparatus according to an embodiment of the invention. FIG. 2 is a schematic top view of the first and second marks of the first and second substrates and the vicinity thereof according to an embodiment of the invention. The following uses FIG. 1 and FIG. 2 to illustrate how to obtain the offset angle between the first and second substrates 100 and 200.

請參照圖1及圖2,首先,提供裝置1000。裝置1000包括在z方向上重疊的第一、二基板100、200。第一基板100具有第一標記110(繪示於圖2)。第二基板200具有第二標記210(繪示於圖2)。在本實施例中,裝置1000例如是顯示面板。顯示面板包括相對的第一、二基板100、200以及夾設在第一、二基板100、200之間的顯示介質300。在本實施例中,顯示介質300例如為液晶,但本發明不限於此。裝置1000具主動區有AA及主動區AA外的周邊區BB。第一、二標記110、210可設置在周邊區BB。Please refer to FIGS. 1 and 2. First, a device 1000 is provided. The device 1000 includes first and second substrates 100 and 200 that overlap in the z direction. The first substrate 100 has a first mark 110 (shown in FIG. 2). The second substrate 200 has a second mark 210 (shown in FIG. 2). In this embodiment, the device 1000 is, for example, a display panel. The display panel includes opposing first and second substrates 100 and 200 and a display medium 300 interposed between the first and second substrates 100 and 200. In the present embodiment, the display medium 300 is, for example, liquid crystal, but the invention is not limited thereto. The 1000 active areas of the device include AA and the surrounding area BB outside the active area AA. The first and second marks 110 and 210 may be provided in the peripheral area BB.

將下述之取得偏移角度的方法應用在對偏移角度敏感的邊緣場切換(Fringe-Field Switching,FFS)、共面切換(In-Plane Switching,IPS)模式顯示面板,效益最大。然而,本發明不限於此,在其他實施例中,裝置1000也可為其它模式的顯示面板,例如;扭轉型(twisted nematic,TN)、超扭轉型(super-twisted nematic,STN)、垂直配向(Vertically Aligned,VA)、圖案化垂直配向(Patterned Vertical Alignment,PVA)等。此外,需說明的是,在本實施例中,裝置1000是以顯示面板為示例,但裝置1000並不限於顯示面板,在其他實施例中,裝置1000也可為半導體元件、或包括需對位之兩基板的其他元件。The following method of obtaining the offset angle is applied to the display panel of Fringe-Field Switching (FFS) and In-Plane Switching (IPS) mode sensitive to the offset angle, which has the most benefit. However, the present invention is not limited to this. In other embodiments, the device 1000 may also be a display panel in other modes, for example; twisted nematic (TN), super-twisted nematic (STN), vertical alignment (Vertically Aligned, VA), patterned vertical alignment (Patterned Vertical Alignment, PVA), etc. In addition, it should be noted that in this embodiment, the device 1000 takes the display panel as an example, but the device 1000 is not limited to the display panel. In other embodiments, the device 1000 may also be a semiconductor element, or include alignment The other components of the two substrates.

請參照圖2,第二標記210包括不同的子標記212、214。子標記212、214在相垂直的x方向與y方向上排成陣列。舉例而言,在本實施例中,第二標記210可為棋盤格圖案,所述棋盤格圖案包括在x方向與y方向上交替排列的多個遮光區塊(即子標記212)與多個透光區塊(即子標記214)。在本實施例中,第一標記110可為面積小於每一遮光區塊(即子標記212)及每一透光區塊(即子標記214)的一個點狀圖案。然而,本發明並不限制第一、二標記110、210的圖案。在其它實施例中,第一、二標記110、210的圖案也可視實際的需求設計為其他形狀。以下以圖3為例說明之。Referring to FIG. 2, the second mark 210 includes different sub-marks 212 and 214. The sub-marks 212 and 214 are arranged in an array in the x direction and the y direction perpendicular to each other. For example, in this embodiment, the second mark 210 may be a checkerboard pattern, the checkerboard pattern includes a plurality of light-shielding blocks (ie, sub-markers 212) and a plurality of alternately arranged in the x and y directions Light-transmitting block (ie sub-mark 214). In this embodiment, the first mark 110 may be a dot pattern having an area smaller than each light-shielding block (ie, the sub-mark 212) and each light-transmitting block (ie, the sub-mark 214). However, the present invention does not limit the patterns of the first and second marks 110 and 210. In other embodiments, the patterns of the first and second marks 110 and 210 can be designed into other shapes according to actual needs. The following uses FIG. 3 as an example.

圖3為本發明另一實施例之第一、二基板的第一、二標記的上視示意圖。圖3的第一、二標記110’、210與圖2的第一、二標記110、210類似,而圖3的第一、二標記110’、210也可應用在下述取得偏移角度的方法中。圖3的第一、二標記110’、210與圖2的第一、二標記110、210不同處在於:圖3的第一標記110’可為菱形圖案。所述菱形110’的邊長大於或等於每一子標記212、214的邊長。藉此,當第一標記110’與第二標記210重疊時,菱形之第一標記110’的頂點很容易落在對應的一個子標記212外。如此一來,便可更容易地判斷,與第一標記110’重疊之第二標記210的子標記212為何者,進而取得偏移角度。3 is a schematic top view of the first and second marks of the first and second substrates according to another embodiment of the invention. The first and second marks 110 ', 210 of FIG. 3 are similar to the first and second marks 110, 210 of FIG. 2, and the first and second marks 110', 210 of FIG. 3 can also be applied to the following method of obtaining the offset angle in. The first and second marks 110 ', 210 of FIG. 3 are different from the first and second marks 110, 210 of FIG. 2 in that the first mark 110' of FIG. 3 may be a diamond pattern. The side length of the diamond 110 'is greater than or equal to the side length of each sub-mark 212,214. In this way, when the first mark 110 'overlaps with the second mark 210, the vertex of the first mark 110' of the rhombus easily falls outside a corresponding sub-mark 212. In this way, it is easier to determine which sub-mark 212 of the second mark 210 overlaps with the first mark 110 ', and then obtain the offset angle.

請參照圖1及圖2,接著,取得位於第一基板100上的一個參考點P(繪示於圖2)。參考點P在z方向上不與第一標記110及/或第二標記210重疊。在本實施例中,第一基板100更具有水平組立精度標記120(繪示於圖2)與垂直組立精度標記130(繪示於圖2)。延伸線L1通過水平組立精度標記120,延伸線L2通過垂直組立精度標記130,而可令延伸線L1、L2的交點為參考點P。之後,定義參考點P為XY座標系的原點(x0 ,y0 )。XY座標系的 X軸與上述x方向平行。XY座標系的Y軸與上述y方向平行。Please refer to FIGS. 1 and 2. Then, a reference point P (shown in FIG. 2) located on the first substrate 100 is obtained. The reference point P does not overlap with the first mark 110 and / or the second mark 210 in the z direction. In this embodiment, the first substrate 100 further has horizontally assembled precision marks 120 (shown in FIG. 2) and vertically assembled precision marks 130 (shown in FIG. 2). The extension line L1 passes the horizontal assembly precision mark 120, and the extension line L2 passes the vertical assembly precision mark 130, so that the intersection point of the extension lines L1 and L2 can be the reference point P. After that, the reference point P is defined as the origin of the XY coordinate system (x 0 , y 0 ). The X axis of the XY coordinate system is parallel to the above x direction. The Y axis of the XY coordinate system is parallel to the above y direction.

請參照圖2,接著,取得第二標記210的幾何中心210c在XY座標系上的座標(xc ,yc )。在本實施例中,參考點P與第二標記210之幾何中心210c的距離R為已知的預設值。距離R的大小端視實際需求而定。詳言之,欲取得越精準的偏移角度時,則可將距離R設計得越大。第二標記210幾何中心210c之座標(xc ,yc )的xc 與yc 分別滿足下列式(1)與式(2),----(1)----(2) ,其中θ0 為XY座標系的 X軸與參考點P和第二標記210幾何中心210c的連線K1的夾角θ0 。以實際的數值為例,參考點P與第二標記210之幾何中心210c的距離R例如為200√2單位長度,θ0 為如為45o ,將200√2與45o 代入式(1)與式(2)可得,第二標記210幾何中心210c的座標(xc ,yc )為(200, 200)。Please refer to FIG. 2. Next, the coordinates (x c , y c ) of the geometric center 210 c of the second mark 210 on the XY coordinate system are obtained. In this embodiment, the distance R between the reference point P and the geometric center 210c of the second mark 210 is a known preset value. The size of distance R depends on the actual needs. In detail, the distance R can be designed to be larger when the more accurate offset angle is to be obtained. 210 second mark 210c geometric center of the coordinate (x c, y c) of x c and y c satisfy the following formulas (1) and (2), ----(1) ---- (2), where θ 0 is the angle θ 0 between the X axis of the XY coordinate system and the connection line K1 between the reference point P and the geometric center 210c of the second mark 210. Taking an actual value as an example, the distance R between the reference point P and the geometric center 210c of the second mark 210 is, for example, 200√2 unit length, and θ 0 is, for example, 45 o , and substitute 200√2 and 45 o into equation (1) It can be obtained from equation (2) that the coordinates (x c , y c ) of the geometric center 210 c of the second mark 210 are (200, 200).

接著,利用第二標記210幾何中心210c的座標(xc ,yc )與第二標記210的子標記212、214計算出第一標記110在XY座標系上的座標(x1 ,y1 )。在本實施例中,每一子標記212、214的尺寸相同,每一子標記212、214在x方向及y方向上分別具有第一寬度W1與第二寬度W2,而利用第二標記210幾何中心210c的座標(xc ,yc )與子標記212、214計算出第一標記110在XY座標系上的座標(x1 ,y1 )的方法包括下列步驟。Then, the coordinates (x c , y c ) of the geometric center 210 c of the second mark 210 and the sub-marks 212 and 214 of the second mark 210 are used to calculate the coordinates (x 1 , y 1 ) of the first mark 110 on the XY coordinate system . In this embodiment, each sub-mark 212, 214 has the same size, each sub-mark 212, 214 has a first width W1 and a second width W2 in the x-direction and y-direction, respectively, and the second mark 210 is used to geometrically The method of calculating the coordinates (x 1 , y 1 ) of the first mark 110 on the XY coordinate system by the coordinates (x c , y c ) of the center 210 c and the sub-marks 212, 214 includes the following steps.

首先,找出與第一標記110重疊的一個子標記212。與第一標記110重疊的子標記212與第二標記210的幾何中心210c在x方向上差距n個子標記212或214的距離。n為整數;若與第一標記110重疊的子標記212在幾何中心210c的右側,則n值為正;若與第一標記110重疊的子標記212在幾何中心210c的左側,則n值為負。與第一標記110重疊的子標記212與第二標記210的幾何中心210c在y方向差距m個子標記212或214的距離。m為整數;若與第一標記110重疊的子標記212在幾何中心210c的上方側,則m值為正;若與第一標記110重疊的子標記212在幾何中心210c的下方,則m值為負。接著,利用下列式(3)與式(4)計算出第一標記110在XY座標系上的座標(x1, y1 )。----(3)----(4) 以實際的數值為例,在本實施例中,與第一標記110重疊的子標記212與第二標記210的幾何中心210c在x方向上差距1個子標記212或214的距離(即n=1)。與第一標記110重疊的子標記212與第二標記210的幾何中心210c在y方向上差距-1個子標記212或214的距離(即m=-1)。每一子標記212、214在x方向及y方向上的第一寬度W1與第二寬度W2例如皆為一個單位長度。將n=1、m=-1、W1=W2=1代入上式(3)與上式(4)可得,第一標記110的座標(x1, y1 )為(200+1‧1 , 200-1‧1),即(201, 199)。First, find a sub-mark 212 that overlaps with the first mark 110. The sub-mark 212 overlapping the first mark 110 and the geometric center 210c of the second mark 210 are separated by n sub-marks 212 or 214 in the x direction. n is an integer; if the sub-marker 212 overlapping the first mark 110 is to the right of the geometric center 210c, the n value is positive; if the sub-marker 212 overlapping the first mark 110 is to the left of the geometric center 210c, the n value negative. The geometric center 210c of the sub-mark 212 overlapping the first mark 110 and the second mark 210 are separated by m sub-marks 212 or 214 in the y direction. m is an integer; if the sub mark 212 overlapping the first mark 110 is above the geometric center 210c, the m value is positive; if the sub mark 212 overlapping the first mark 110 is below the geometric center 210c, the m value Is negative. Next, the coordinates (x 1, y 1 ) of the first mark 110 on the XY coordinate system are calculated using the following equations (3) and (4). ---- (3) ---- (4) Taking the actual value as an example, in this embodiment, the geometric center 210c of the sub-mark 212 overlapping the first mark 110 and the second mark 210 differ by 1 sub-mark 212 or 214 in the x direction The distance (ie n = 1). The sub-mark 212 overlapping with the first mark 110 and the geometric center 210c of the second mark 210 are separated by a distance of -1 sub-mark 212 or 214 in the y direction (ie, m = -1). The first width W1 and the second width W2 of each sub-mark 212, 214 in the x direction and the y direction are, for example, one unit length. Substituting n = 1, m = -1, W1 = W2 = 1 into the above formula (3) and the above formula (4), the coordinates (x 1, y 1 ) of the first mark 110 are (200 + 1‧1, 200 -1‧1), that is (201, 199).

請參照圖1及圖2,接著,取得第一、二基板100、200之間的水平偏移量△δx與垂直偏移量△δy。舉例而言,在本實施例中,可藉由第一基板100的水平組立精度標記120取得第一基板100與第二基板200間的水平偏移量△δx;可藉由第一基板100的垂直組立精度標記120取得第一基板100與第二基板200間的垂直偏移量△δy。接著,利用下列式(5)計算出第一基板100與第二基板200間的第一偏移角度△θ,----(5) ,其中θ0 為XY座標系的X軸與參考點P和第二標記210幾何中心210c的連線K1的夾角θ0 。以實際的數值為例,△δx與△δy例如為0,。換言之,在本實施例中,第一、二基板100、200在二維空間(xy平面上)的第一偏移角度△θ為0.286oPlease refer to FIGS. 1 and 2, and then obtain the horizontal offset Δδx and the vertical offset Δδy between the first and second substrates 100 and 200. For example, in this embodiment, the horizontal offset Δδx between the first substrate 100 and the second substrate 200 can be obtained by the horizontal assembly precision mark 120 of the first substrate 100; The vertical assembly precision mark 120 obtains the vertical offset amount Δδy between the first substrate 100 and the second substrate 200. Next, the first offset angle Δθ between the first substrate 100 and the second substrate 200 is calculated using the following formula (5), ---- (5), where θ 0 is the angle θ 0 between the X axis of the XY coordinate system and the connection line K1 between the reference point P and the geometric center 210c of the second mark 210. Taking actual values as an example, △ δx and △ δy are, for example, 0, . In other words, in this embodiment, the first and second substrates 100 and 200 in the two-dimensional space (xy plane) of the first offset angle is 0.286 o △ θ in the present embodiment.

上述第一偏移角度△θ是指第一、二基板100、200在二維空間(xy平面上)的偏移角度。上述取得第一偏移角度△θ的方法更可進一步地擴充並應用至三維空間,以取得第二偏移角度△Φ。△Φ代表第二基板200在z方向上相對於第一基板100翹起的程度。詳言之,請參照圖1及圖2,上述取得偏移角度的方法更包括:量測幾何中心210c正下方的第一基板100與第二基板200之間的間隙zc 以及第一標記110正上方的第一基板100與第二基板200之間的間隙z1 。間隙zc 即第一、二基板100、200在幾何中心210c上沿著z方向的間隙(cell gap)。間隙z1 即第一、二基板100、200在第一標記110上沿著z方向的間隙。接著,利用下式(6)即可取得第二偏移角度△Φ。----(6) 當△Φ=0時,表示第一基板100與第二基板200平行。當△Φ≠0時,則表示第二基板200在z方向上相對於第一基板100翹起角度△Φ。The above-mentioned first offset angle Δθ refers to an offset angle of the first and second substrates 100 and 200 in a two-dimensional space (on the xy plane). The above method of obtaining the first offset angle Δθ can be further extended and applied to the three-dimensional space to obtain the second offset angle ΔΦ. ΔΦ represents the degree to which the second substrate 200 is warped relative to the first substrate 100 in the z direction. In detail, please refer to FIG. 1 and FIG. 2, the above method for obtaining the offset angle further includes: measuring the gap z c between the first substrate 100 and the second substrate 200 directly under the geometric center 210 c and the first mark 110 The gap z 1 between the first substrate 100 and the second substrate 200 directly above. The gap z c is a cell gap along the z direction on the geometric center 210 c of the first and second substrates 100 and 200. The gap z 1 is the gap between the first and second substrates 100 and 200 along the z direction on the first mark 110. Next, the second offset angle ΔΦ can be obtained using the following equation (6). ---- (6) When △ Φ = 0, it means that the first substrate 100 and the second substrate 200 are parallel. When ΔΦ ≠ 0, it means that the second substrate 200 is tilted at an angle ΔΦ with respect to the first substrate 100 in the z direction.

綜上所述,利用本發明一實施例之取得偏移角度的方法可簡易地獲得任一裝置之第一、二基板間的偏移角度。利用偏移角度可更精確地監測裝置的品質並將其分級。In summary, the method for obtaining the offset angle according to an embodiment of the present invention can easily obtain the offset angle between the first and second substrates of any device. The offset angle can be used to more accurately monitor and classify the quality of the device.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100‧‧‧第一基板
110、110’‧‧‧第一標記
120‧‧‧水平組立精度標記
130‧‧‧垂直組立精度標記
200‧‧‧第二基板
210‧‧‧第二標記
210c‧‧‧幾何中心
212、214‧‧‧子標記
300‧‧‧顯示介質
1000‧‧‧裝置
AA‧‧‧主動區
BB‧‧‧周邊區
K1‧‧‧連線
L1、L2‧‧‧延伸線
P‧‧‧參考點
R‧‧‧距離
W1‧‧‧第一寬度
W2‧‧‧第二寬度
x、y、z‧‧‧方向
X、Y‧‧‧軸
(x0,y0,z0)‧‧‧原點
(xc,yc,zc)、(x1,y1,z1)‧‧‧座標
θ0‧‧‧夾角
100‧‧‧The first substrate
110, 110'‧‧‧ first mark
120‧‧‧Horizontal assembly precision mark
130‧‧‧ Vertical assembly precision mark
200‧‧‧Second substrate
210‧‧‧Second mark
210c‧‧‧Geometric Center
212, 214‧‧‧ sub-tag
300‧‧‧Display medium
1000‧‧‧device
AA‧‧‧Active area
BB‧‧‧ surrounding area
K1‧‧‧Connect
L1, L2‧‧‧Extension line
P‧‧‧Reference point
R‧‧‧Distance
W1‧‧‧First width
W2‧‧‧second width
x, y, z‧‧‧ direction
X, Y‧‧‧ axis (x 0 , y 0 , z 0 ) ‧‧‧ origin (x c , y c , z c ), (x 1 , y 1 , z 1 ) ‧‧‧ coordinates θ 0 ‧ ‧‧ Angle

圖1為本發明一實施例之裝置的剖面示意圖。 圖2為本發明一實施例之第一、二基板的第一、二標記及其附近區域的上視示意圖。 圖3為本發明另一實施例之第一、二基板的第一、二標記的上視示意圖。FIG. 1 is a schematic cross-sectional view of an apparatus according to an embodiment of the invention. FIG. 2 is a schematic top view of the first and second marks of the first and second substrates and the vicinity thereof according to an embodiment of the invention. 3 is a schematic top view of the first and second marks of the first and second substrates according to another embodiment of the invention.

110‧‧‧第一標記 110‧‧‧ First mark

120‧‧‧水平組立精度標記 120‧‧‧Horizontal assembly precision mark

130‧‧‧垂直組立精度標記 130‧‧‧ Vertical assembly precision mark

210‧‧‧第二標記 210‧‧‧Second mark

210c‧‧‧幾何中心 210c‧‧‧Geometric Center

212、214‧‧‧子標記 212, 214‧‧‧ sub-tag

K1‧‧‧連線 K1‧‧‧Connect

L1、L2‧‧‧延伸線 L1, L2‧‧‧Extension line

P‧‧‧參考點 P‧‧‧Reference point

R‧‧‧距離 R‧‧‧Distance

W1‧‧‧第一寬度 W1‧‧‧First width

W2‧‧‧第二寬度 W2‧‧‧second width

x、y、z‧‧‧方向 x, y, z‧‧‧ direction

X、Y‧‧‧軸 X, Y‧‧‧ axis

(x0,y0,z0)‧‧‧原點 (x 0 , y 0 , z 0 ) ‧‧‧Origin

(xc,yc,zc)、(x1,y1,z1)‧‧‧座標 (x c , y c , z c ), (x 1 , y 1 , z 1 ) ‧‧‧Coordinates

θ0‧‧‧夾角 θ 0 ‧‧‧ included angle

Claims (8)

一種取得偏移角度的方法,包括: 提供一裝置,該裝置包括相重疊的一第一基板與一第二基板,該第一基板具有一第一標記,該第二基板具有一第二標記,該第二標記包括多個子標記,該些子標記在相垂直的x方向與y方向上排成一陣列; 取得位於該第一基板上的一參考點,該參考點不與該第一標記或該第二標記重疊; 令該參考點為一XY座標系的原點(x0 ,y0 ),該XY座標系的 X軸與該x方向平行,該XY座標系的Y軸與該y方向平行; 取得該第二標記的幾何中心在該XY座標系上的座標(xc ,yc ); 利用該座標(xc ,yc )與該第二標記的該些子標記計算出該第一標記在該XY座標系上的座標(x1 ,y1 ); 取得該第一基板與該第二基板之間的一水平偏移量△δx與一垂直偏移量△δy;以及 利用下列式(1)計算出該第一基板與該第二基板之間的一第一偏移角度△θ,-------(1),其中θ0 為該XY座標系的X軸與該參考點和該第二標記幾何中心之連線的夾角。A method for obtaining an offset angle includes: providing a device including a first substrate and a second substrate overlapping each other, the first substrate has a first mark, and the second substrate has a second mark, The second mark includes a plurality of sub-marks, the sub-marks are arranged in an array in the x direction and the y direction perpendicular to each other; a reference point on the first substrate is obtained, the reference point does not correspond to the first mark or The second mark overlaps; let the reference point be the origin of an XY coordinate system (x 0 , y 0 ), the X axis of the XY coordinate system is parallel to the x direction, and the Y axis of the XY coordinate system is parallel to the y direction Parallel; obtain the coordinates (x c , y c ) of the geometric center of the second mark on the XY coordinate system; use the coordinates (x c , y c ) and the sub-marks of the second mark to calculate the first A coordinate (x 1 , y 1 ) marked on the XY coordinate system; obtaining a horizontal offset Δδx and a vertical offset Δδy between the first substrate and the second substrate; and using the following Equation (1) calculates a first offset angle Δθ between the first substrate and the second substrate, ------- (1), where θ 0 is the angle between the X axis of the XY coordinate system and the line connecting the reference point and the geometric center of the second mark. 如申請專利範圍第1項所述的取得偏移角度的方法,其中該些子標記的尺寸相同,每一子標記在該x方向及該y方向上分別具有一第一寬度W1與一第二寬度W2,而利用該第二標記幾何中心的該座標(xc ,yc )與該些子標記計算出該第一標記在該XY座標系上的座標(x1 ,y1 )的步驟包括: 找出與該第一標記重疊的一個子標記,該子標記與該第二標記的幾何中心在x方向上差距n個子標記的距離,該子標記與該第二標記的幾何中心在y方向差距m個子標記的距離,其中n、m為整數;以及 利用下列式(2)與式(3)計算出該第一標記在該XY座標系上的座標(x1 ,y1 ),------- (2);------- (3)。The method for obtaining an offset angle as described in item 1 of the patent application scope, wherein the sub-markers have the same size, and each sub-marker has a first width W1 and a second width in the x direction and the y direction, respectively The width W2, and the step of calculating the coordinates (x 1 , y 1 ) of the first mark on the XY coordinate system using the coordinates (x c , y c ) of the geometric center of the second mark and the sub-marks includes : Find a sub-mark that overlaps with the first mark, the geometric center of the sub-mark and the second mark is separated by n sub-marks in the x direction, and the geometric center of the sub mark and the second mark is in the y direction The distance between the m sub-markers, where n and m are integers; and the coordinates (x 1 , y 1 ) of the first marker on the XY coordinate system are calculated using the following formulas (2) and (3), ------- (2); ------- (3). 如申請專利範圍第1項所述的取得偏移角度的方法,其中該第一基板更具有一水平組立精度標記與一垂直組立精度標記,而取得位於該第一基板上的該參考點的步驟包括: 令通過該水平組立精度標記之一延伸線與通過該垂直組立精度標記之一延伸線的交點為該參考點。The method for obtaining an offset angle as described in item 1 of the patent application scope, wherein the first substrate further has a horizontal assembly precision mark and a vertical assembly precision mark, and the step of obtaining the reference point on the first substrate Including: let the intersection point of an extension line passing through the horizontal assembly precision mark and an extension line passing through the vertical assembly precision mark be the reference point. 如申請專利範圍第3項所述的取得偏移角度的方法,其中該參考點與該第二標記之幾何中心的距離R為一預設值,而該第二標記幾何中心之座標(xc ,yc )的xc 與yc 分別滿足下列式(4)與式(5), ------- (4);------- (5)。The method for obtaining an offset angle as described in item 3 of the patent application scope, wherein the distance R between the reference point and the geometric center of the second mark is a preset value, and the coordinate of the geometric center of the second mark (x c , y c ) x c and y c satisfy the following formula (4) and formula (5), ------- (4); ------- (5). 如申請專利範圍第1項所述的取得偏移角度的方法,其中該第二標記為一棋盤格圖案,該棋盤格圖案包括在x方向與y方向上交替排列的多個遮光區塊與多個透光區塊,而該第一標記為面積小於每一該遮光區塊及每一透光區塊的一點狀圖案。The method for obtaining an offset angle as described in item 1 of the patent application scope, wherein the second mark is a checkerboard pattern, the checkerboard pattern includes a plurality of light-shielding blocks and multiple Light-transmitting blocks, and the first mark is a dot-like pattern with an area smaller than each of the light-blocking blocks and each light-transmitting block. 申請專利範圍第1項所述的取得偏移角度的方法,其中該第二標記為一棋盤格圖案,該棋盤格圖案包括在x方向與y方向上交替排列的多個遮光區塊與多個透光區塊,而該第一標記為一菱形,該菱形的邊長大於或等於每一該遮光區塊的邊長以及每一該透光區塊的邊長。The method for obtaining an offset angle as described in item 1 of the patent application, wherein the second mark is a checkerboard pattern, the checkerboard pattern includes a plurality of light shielding blocks and a plurality of alternately arranged in the x direction and the y direction The light-transmitting block, and the first mark is a diamond, and the side length of the diamond is greater than or equal to the side length of each light-shielding block and the side length of each light-transmitting block. 如申請專利範圍第1項所述的取得偏移角度的方法,更包括: 量測該第二標記之幾何中心正下方的該第一基板與該第二基板之間的間隙zc 以及該第一標記正上方的該第一基板與該第二基板之間的間隙z1 ;以及 利用下式(6)取得一第二偏移角度△Φ,----(6)。The method for obtaining an offset angle as described in item 1 of the patent application scope further includes: measuring the gap z c between the first substrate and the second substrate directly below the geometric center of the second mark and the first A gap z 1 between the first substrate and the second substrate directly above a mark; and a second offset angle ΔΦ is obtained using the following formula (6), ---- (6). 如申請專利範圍第1項所述的取得偏移角度的方法,其中該裝置為邊緣場切換(Fringe Field Switching,FFS)模式或共面切換(In-Plane Switching,IPS)模式的液晶顯示裝置。The method for obtaining an offset angle as described in item 1 of the patent application range, wherein the device is a liquid crystal display device in fringe field switching (FFS) mode or in-plane switching (IPS) mode.
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