TW201806108A - Semiconductor package - Google Patents

Abstract

A semiconductor package includes a first chip and a second chip. The first chip includes a first active surface having a connecting zone, a plurality of wires extending into the connecting zone and a plurality of high wetting pads disposed on the wires. The high wetting pads are disposed at portions of the wires which are located inside the connecting zone. The second chip is flipped on the connecting zone of the first chip and includes a plurality of bumps connected to the high wetting pads of the wires. A wetting degree between the high wetting pads and the bumps is more than a wetting degree between the other portion of the wires and the bumps.

Description

Semiconductor package

The present invention relates to a package, and more particularly to a semiconductor package.

With the rapid development of technology, integrated circuits (IC) components have been widely used in our daily lives. Generally speaking, the production of integrated circuits is mainly divided into three stages: the manufacture of silicon wafers, the production of integrated circuits, and the packaging of integrated circuits.

In the current package structure, bonding a chip to another chip or a wafer trace through a bump in a flip-chip manner is a fairly common package type. Generally speaking, the material of the above-mentioned wiring is selected from materials with high stability, good ductility and good wetting, such as gold, with yield, production efficiency, miniaturization of wire diameter, and between bumps. The joints performed well. However, if the trace's wettability is too good, the bumps may flow along the trace and collapse when they are soldered back to the trace, causing a relatively high package failure rate.

The invention provides a semiconductor package in which the bumps of one of the wafers can be well bonded to the traces of the other wafer and still have a certain height.

A semiconductor package according to the present invention includes a first chip and a second chip. The first chip includes a first active surface, wherein the first active surface includes a bonding area, a plurality of traces extending into the bonding area, and a plurality of high-wetting pads disposed on the lines, wherein the high-wetting pads are configured The local area of these traces in the junction area. The second wafer is flip-chip disposed on the bonding area of the first wafer and includes a plurality of bumps, wherein the bumps are connected to the high-wet pads of the traces, and the distance between the high-wet pads and the bumps is high. The degree of wetting is greater than the degree of wetting between the other parts of these traces and the bumps.

In an embodiment of the present invention, the above-mentioned areas projected by the bumps onto the first active surface are located in the areas of the high-wet pads on the first active surface.

In an embodiment of the present invention, the width of each of the high-wetting pads is equal to the width of the traces.

In an embodiment of the present invention, the maximum length of each of the high-wetting pads is greater than a diameter of each of the bumps projected onto the first active surface.

In an embodiment of the present invention, a diameter of each of the bumps projected onto the first active surface is smaller than or equal to a width of a trace.

In an embodiment of the present invention, a ratio of an area of the high-wet pads on the first active surface to an area of the bumps projected onto the first active surface is between 1 and 1.5.

In an embodiment of the present invention, the materials of the above-mentioned high-wetting pads include gold or Organic Solderability Preservatives (OSP).

In an embodiment of the present invention, a material of the above-mentioned traces in a portion not covered by the high-wetting pad includes nickel, aluminum, copper, titanium, tin, or a silver-tin alloy.

In an embodiment of the present invention, the above-mentioned semiconductor package further includes a protective layer disposed on the first active surface and covering a part of these traces.

In an embodiment of the present invention, the semiconductor package further includes a wafer including a plurality of first wafers arranged in an array, and the semiconductor package includes a plurality of second wafers, and the second wafers are disposed on the wafer in a flip-chip manner. On these first wafers.

Based on the above, in the semiconductor package of the present invention, a high-moisture pad is arranged in a local area of a trace of the first wafer in the bonding area, and the second wafer is bonded to the high-moisture pad of the first wafer through a bump, and these The design of the degree of wetting between the wetting pad and these bumps is greater than the degree of wetting between the other parts of these traces and these bumps, which can effectively ensure that the bumps and traces are maintained in a high-moisture pad To prevent bumps from collapsing too much and affecting the yield of semiconductor packages.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

FIG. 1A is a schematic diagram of a semiconductor package according to an embodiment of the invention. Please refer to FIG. 1A first. FIG. 1A illustrates a plurality of semiconductor packages 10 that have not been cut. A wafer 100 located below includes a plurality of first wafers 110 arranged in an array. On the first wafers 110 of the wafer 100.

Fig. 1B is a schematic cross-sectional view taken along the line A-A of Fig. 1A. FIG. 2 is an enlarged plan view of one of the semiconductor packages of FIG. 1A. It should be noted that in FIG. 2, the second wafer 200 and the encapsulating gel located between the first wafer 100 and the second wafer 200 are intentionally hidden to expose the relative position between the bump 210 and the trace 116. Please refer to FIG. 1B to FIG. 2. The semiconductor package 10 in this embodiment includes a first chip 110 and a second chip 200. As shown in FIG. 2, the first chip 110 includes a first active surface 112. The first active surface 112 includes a bonding region 114, a plurality of traces 116 extending into the bonding region 114, and a plurality of traces 116 disposed on the traces 116. A plurality of high-wet pads 118, wherein the high-wet pads 118 are configured in a local area of the traces 116 within the bonding region 114. As shown in FIG. 1B, the second wafer 200 is overlyingly disposed on the bonding region 114 of the first wafer 110, and the solder ball 20 is disposed on the first wafer 110 and surrounds the second wafer 200. In this embodiment, the solder ball The height of 20 is larger than the distance between the wafer back of the second wafer 200 and the first wafer 110. The second wafer 200 includes a plurality of bumps 210, wherein the bumps 210 are connected to the high-wet pads 118 of the traces 116.

In this embodiment, the degree of wetting between the high-wetting pads 118 and the bumps 210 is greater than the degree of wetting between other portions of the traces 116 and the bumps 210, respectively. The material of the high-wetting pad 118 includes gold or Organic Solderability Preservatives (OSP). The materials of the traces 116 in the portions not covered by the high-wet pads 118 include nickel, aluminum, copper, titanium, tin, or a silver-tin alloy. Of course, the materials of the high-wet pad 118 and the trace 116 in the parts not covered by these high-wet pads 118 are not limited to the above, as long as the material selected for the high-wet pad 118 is more wettable than the trace 116 The wettability of the material selected for the portions not covered by these high-moisture pads 118 is sufficient.

In the semiconductor package 10 of this embodiment, a high-wetting pad 118 is specially arranged on the area where the bumps 210 are to be joined on the trace 116, and the material of the trace 116 on the portion not covered by these high-wet pads 118 is selected. Less wettable material. In this way, when the bump 210 of the second wafer 200 is soldered to the trace 116 of the first wafer 110, the range of the bump 210 deformation of the second wafer 200 due to heat and melting will be limited to the high-wet pad 118. Inside, the molten bump 210 will not collapse too much because the wettability of the entire trace 116 is too good, and the package will fail.

The position of the high-humidity pad 118 disposed on the trace 116 and the relative position between the high-humidity pad 118 and the bump 210 in the semiconductor package 10 of this embodiment will be defined in more detail below. FIG. 3 is a partially enlarged schematic diagram of FIG. 2. FIG. 4 is an enlarged schematic diagram of a B block in FIG. 3. Please refer to FIG. 3 and FIG. 4. In this embodiment, the areas of the projections 210 projected on the first active surface 112 (labeled in FIG. 2) are located on the first active surface 112 of the high-wetting pads 118. within the area. As shown in FIG. 4, the width of the high-wetting pad 118 is equal to the width of the trace 116, and the lengths L and L1 of the high-wetting pad 118 are slightly greater than or equal to the diameter D of the projection 210 projected onto the first active surface 112. The diameter D of each bump 210 projected onto the first active surface 112 is smaller than or equal to the width W of the trace 116. That is, the area of the high wetting pad 118 on the first active surface 112 will be slightly larger than or equal to the area of the bump 210 projected onto the first active surface 112. More specifically, the ratio of the area of the high-wetting pad 118 on the first active surface 112 to the area of the projection 210 projected on the first active surface 112 is between 1 and 1.5.

In this embodiment, the width W of the trace 116 is approximately 50 microns, the diameter D of the projection 210 projected onto the first active surface 122 is approximately 50 microns, and the length L of the leftmost high-wetting pad 118 is approximately At 60 microns, the length L1 of the two high-wetting pads 118 on the left side of FIG. 4 is about 70 microns. Of course, the above values are only one example. The values of the width W of the trace 116, the diameter D of the projection 210 projected onto the first active surface 112, and the lengths L and L1 of the high-wetting pad 118 are not the same as those described above. For restrictions.

In the semiconductor package 10 of the present invention, a high-wetting pad 118 is disposed in a region of the trace 116 near the bump 210 in the bonding region 114, and a region of the bump 210 projected on the first active surface 112 is located in the high-wetting pad 118 is in the area on the first active surface 112, and the ratio of the area of the high wetting pad 118 on the first active surface 112 to the area of the projection 210 projected on the first active surface 112 is between 1 and 1.5 In order to define the range in which the bump 210 can flow during the reflow process through the high-wetting pad 118, the bump 210 is too collapsed and the height is insufficient, which leads to packaging failure.

It is worth mentioning that although the trace 116 of the first chip 110 is exposed in this embodiment, in an unillustrated embodiment, the semiconductor package 10 may also include a protective layer disposed on the first The active surface 112 covers a part of the trace 116 to reduce the chance of the trace 116 oxidizing.

In summary, the semiconductor package of the present invention can be applied to a Chip on Chip package (CoC package) or a Chip on Wafer package (CoW package). In the semiconductor package of the present invention, a high-moisture pad is arranged in a local area of a trace of the first wafer in the bonding area, and the second wafer is bonded to the high-moisture pad of the first wafer through a bump, and these high-moisture pads The design of the degree of wetting with these bumps is greater than the degree of wetting between the other parts of these traces and these bumps, which can effectively ensure that when the bumps and the traces are joined, they will be maintained in the range of high-humidity pads. To prevent bumps from collapsing too much and affecting the yield of semiconductor packages.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

D‧‧‧ diameter
L, L1, L2‧‧‧ length
W‧‧‧Width
10‧‧‧Semiconductor Package
20‧‧‧Solder Ball
100‧‧‧ wafer
110‧‧‧First Chip
112‧‧‧First active face
114‧‧‧ Junction
116‧‧‧route
118‧‧‧High Wetting Pad
200‧‧‧Second chip
210‧‧‧ bump

FIG. 1A is a schematic diagram of a semiconductor package according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along the line A-A of Fig. 1A. FIG. 2 is a schematic enlarged plan view of one of the semiconductor packages of the semiconductor package of FIG. 1A. FIG. 3 is a partially enlarged schematic diagram of FIG. 2. FIG. 4 is an enlarged schematic diagram of a B block in FIG. 3.

110‧‧‧First Chip

112‧‧‧First active face

114‧‧‧ Junction

116‧‧‧route

118‧‧‧High Wetting Pad

210‧‧‧ bump

Claims (10)

A semiconductor package includes: a first chip including a first active surface, wherein the first active surface includes a bonding area, a plurality of traces extending into the bonding area, and a plurality of heights arranged on the traces; A wetting pad, wherein the high-wetting pads are disposed in a local area of the traces in the bonding area; and a second wafer is flip-chip disposed on the bonding area of the first wafer and Including a plurality of bumps, wherein the bumps are connected to the high-wet pads of the traces, and the degree of wetting between the high-moisture pads and the bumps is greater than the wettings, respectively. The degree of wetting between the other parts of the line and the bumps. The semiconductor package according to item 1 of the scope of patent application, wherein the areas where the bumps are projected onto the first active surface are located in the areas with high wetting on the first active surface. The semiconductor package according to item 1 of the scope of patent application, wherein a width of each of the high-wetting pads is equal to a width of the traces. The semiconductor package according to item 1 of the scope of patent application, wherein a maximum length of each of the high-wetting pads is greater than a diameter of each of the bumps projected onto the first active surface. The semiconductor package according to item 1 of the scope of patent application, wherein a diameter of each of the bumps projected onto the first active surface is smaller than or equal to a width of the trace. The semiconductor package according to item 1 of the patent application range, wherein a ratio of an area of the high-wetting pads on the first active surface to an area of the bumps projected onto the first active surface is between 1 and 1. Between 1.5. The semiconductor package according to item 1 of the scope of the patent application, wherein the materials of the high-wetting pads include gold or organic solderability preservatives (OSP). The semiconductor package according to item 1 of the scope of patent application, wherein the material of the traces on the portions not covered by the high-wetting pads includes nickel, aluminum, copper, titanium, tin, or a silver-tin alloy. The semiconductor package according to item 1 of the patent application scope further includes: a protective layer disposed on the first active surface and covering the traces. The semiconductor package according to item 1 of the patent application scope further includes: a wafer including a plurality of the first wafers arranged in an array; the semiconductor package including a plurality of the second wafers; The ground is disposed on the first wafers of the wafer.