US20210118804A1 - Package structure with bump - Google Patents
Package structure with bump Download PDFInfo
- Publication number
- US20210118804A1 US20210118804A1 US17/134,720 US202017134720A US2021118804A1 US 20210118804 A1 US20210118804 A1 US 20210118804A1 US 202017134720 A US202017134720 A US 202017134720A US 2021118804 A1 US2021118804 A1 US 2021118804A1
- Authority
- US
- United States
- Prior art keywords
- chip
- bumps
- package structure
- chip edge
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1035—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Definitions
- semiconductor dies are increasingly becoming smaller. More functions, however, need to be integrated into these semiconductor dies. Accordingly, these semiconductor dies have increasingly greater numbers of I/O pads packaged into smaller areas, and the density of the I/O pads is quickly rising. As a result, the packaging of semiconductor dies is becoming more difficult.
- Package technologies can be divided into multiple categories. In one of the categories of packaging, dies are sawed from wafers before they are packaged onto other wafers, and only “known-good-dies” are packaged.
- An advantage of this packaging technology is the possibility of forming fan-out chip packages, which means that the I/O pads on a die can be redistributed to a greater area than the die itself. Therefore, the number of I/O pads packed on the surfaces of the dies can be increased.
- FIG. 1 is a cross-sectional view of a package structure, in accordance with some embodiments.
- FIG. 2 is a top view of a package structure, in accordance with some embodiments.
- FIG. 3 is a top view of a package structure, in accordance with some embodiments.
- FIG. 4 is a top view of a package structure, in accordance with some embodiments.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures.
- the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
- the apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- Embodiments of the disclosure provide a package structure with improved reliability. Stress, which may be caused by a mismatch of the coefficient of thermal expansion (CTE) between multiple heterogeneous materials in the package structure, is distributed. Therefore, damage to the package structure that may result from stress concentration is mitigated or eliminated.
- CTE coefficient of thermal expansion
- FIG. 1 is a cross-sectional view of a package structure, in accordance with some embodiments. Additional features can be added to the package structure. Some of the features described below can be replaced or eliminated for different embodiments.
- a package structure 100 includes multiple integrated circuit chips 200 , in accordance with some embodiments.
- the integrated circuit chips 200 have an active surface 202 .
- the integrated circuit chips 200 may be device chips/dies including transistors, diodes, or other suitable integrated circuit elements.
- the device chips may also include capacitors, inductors, resistors, other integrated circuit elements, or a combination thereof.
- the integrated circuit chips 200 are sensor chips, logic chips, central processing unit (CPU) chips, memory chips, or other suitable chips.
- the integrated circuit chips 200 may have substantially the same size or different sizes according to requirements.
- Each of the integrated circuit chips 200 may include a semiconductor substrate 210 , a passivation layer 220 , conductive pads 230 , connectors 240 , and a protection layer 250 .
- the semiconductor substrate 210 includes silicon or another elementary semiconductor material such as germanium.
- the semiconductor substrate 210 includes a compound semiconductor.
- the compound semiconductor may include silicon germanium, gallium arsenide, silicon carbide, another suitable compound semiconductor, or a combination thereof.
- the device elements include active devices and/or passive devices.
- the conductive pads 230 are in the passivation layer 220 and are electrically connected to the device elements.
- the connectors 240 are surrounded by the protection layer 250 and are electrically connected to the conductive pads 230 .
- FIG. 1 shows that the package structure 100 includes multiple integrated circuit chips 200 , embodiments of the disclosure are not limited thereto. In some other embodiments, the package structure 100 includes only one integrated circuit die 200 .
- the integrated circuit chips 200 are continuously surrounded by a package layer 260 , in accordance with some embodiments.
- the package layer 260 has a bottom surface 262 that is substantially coplanar with the active surface 202 of the integrated circuit chips 200 .
- the package layer 260 has a top surface that is substantially coplanar with the non-active surface of the integrated circuit chips 200 .
- the package layer 260 is in direct contact with the semiconductor substrate 210 , the passivation layer 220 , and the protection layer 250 .
- each of the integrated circuit chips 200 has a chip edge 212 in direct contact with the package layer 260 .
- the interface 360 is substantially coplanar with the chip edge 212 .
- the package layer 260 includes a polymer material. In some embodiments, the package layer 260 includes a molding compound. The material of the package layer 260 is different from the material of the semiconductor substrate 210 . In some embodiments, the material of the package layer 260 is different from the material of the passivation layer 220 and/or the protection layer 250 .
- the package layer 260 also continuously surrounds multiple conductive features 270 , as shown in FIG. 1 in accordance with some embodiments.
- the conductive features 270 are on two opposite sides of the integrated circuit chips 200 .
- the conductive features 270 discontinuously or discretely surround the integrated circuit chips 200 .
- the conductive features 270 are conductive pillars or other suitable structures.
- the conductive features 270 may be referred to as through interposer vias (TIVs).
- the conductive features 270 include Cu, Al, nickel (Ni), platinum (Pt), lead-free solder (e.g., SnAg, SnCu, SnAgCu), another suitable conductive material, or a combination thereof.
- the package structure 100 does not include the conductive features 270 .
- the package structure 100 also includes a redistribution structure 300 below the bottom surface 262 of the package layer 260 , in accordance with some embodiments.
- the redistribution structure 300 is electrically connected to the connectors 240 of the integrated circuit chips 200 and the conductive features 270 .
- the front side (the active surface 202 ) of the integrated circuit chips 200 faces the redistribution structure 300 .
- the back side (the non-active surface) of the integrated circuit chips 200 faces the redistribution structure 300 .
- the redistribution structure 300 includes one or more redistribution layers and one or more passivation layers.
- the redistribution structure 300 includes redistribution layers 310 in a passivation layer 320 .
- the passivation layer 320 includes a region 320 A and a region 320 B adjoining the region 320 A, as shown in FIG. 1 .
- the region 320 B continuously surrounds the region 320 A.
- the boundary 322 is substantially aligned to the chip edge 212 , as shown in FIG. 1 .
- the passivation layer 320 may include multiple sub-layers.
- the passivation layer 320 in the redistribution structure 300 is made of polybenzoxazole (PBO), benzocyclobutene (BCB), silicone, acrylates, siloxane, another suitable material, or a combination thereof.
- the passivation layer 320 in the redistribution structure 300 is made of non-organic materials.
- the non-organic materials includes silicon oxide, un-doped silicate glass, silicon oxynitride, solder resist (SR), silicon nitride, silicon carbide, hexamethyldisilazane (HMDS), another suitable material, or a combination thereof.
- Each of the redistribution layers 310 in the passivation layer 320 includes multiple redistribution lines.
- one or more of the redistribution lines in the redistribution layers 310 partially vertically overlap the chip edge 212 and extend along a direction intersecting the chip edge 212 , as shown in FIG. 1 .
- one or more of the redistribution lines in the redistribution layers 310 extend across the boundary 322 between the region 320 A and the region 320 B.
- the redistribution layers 310 in the redistribution structure 300 are made of metal materials.
- the metal material includes copper (Cu), Cu alloy, aluminum (Al), Al alloy, tungsten (W), W alloy, titanium (Ti), Ti alloy, tantalum (Ta), Ta alloy, another suitable material, or a combination thereof.
- the package structure 100 further includes multiple bumps 330 below the passivation layer 320 , as shown in FIG. 1 in accordance with some embodiments.
- the bumps 330 are electrically connected to the integrated circuit chips 200 through the redistribution layers 310 of the redistribution structure 300 .
- the bumps 330 and the integrated circuit chips 200 are on two opposite sides of the redistribution structure 300 .
- the bumps 330 are not directly under the interface 360 between the integrated circuit chips 200 and the package layer 260 .
- none of the bumps 330 vertically overlaps the chip edge 212 and a chip corner of the integrated circuit chip 200 .
- the bumps 330 are arranged within the region 320 A and the region 320 B of the passivation layer 320 . In some embodiments, some of the bumps 330 are next to the boundary 322 and arranged along the boundary 322 without overlapping the boundary 322 . In some embodiments, none of the bumps 330 is aligned to the boundary 322 or directly under the boundary 322 .
- the bumps 330 include solder bumps, solder balls, metal pillars, other suitable connectors, or a combination thereof.
- the (minimum) bump pitch P between two adjacent bumps of the bumps 330 is in a range from about 300 ⁇ m to about 500 ⁇ m.
- some of the bumps 330 have substantially the same bump pitch. However, embodiments of the disclosure are not limited thereto. In some other embodiments, some of the bumps 330 have different bump pitches.
- UBM element 340 there is an under-bump metallurgy (UBM) element 340 between the redistribution structure 300 and one of the bumps 330 , in accordance with some embodiments.
- the UBM element 340 is substantially aligned to one of the bumps 330 .
- the UBM element 340 is in direct contact with one of the bumps 330 .
- the width W of the UBM element 340 is in a range from about 150 ⁇ m to about 300 ⁇ m.
- the UBM element 340 includes a diffusion barrier layer and a seed layer.
- the diffusion barrier layer may include tantalum nitride, titanium nitride, tantalum, titanium, another suitable diffusion barrier material, or a combination thereof.
- the seed layer may be a copper seed layer on the diffusion barrier layer.
- the copper seed layer may include copper or one of the copper alloys that include silver, chromium, nickel, tin, gold, or a combination thereof.
- an element 280 is stacked over the integrated circuit chips 200 , in accordance with some embodiments.
- the element 280 and the redistribution structure 300 are on two opposite sides of the integrated circuit chips 200 .
- the element 280 is electrically connected to the integrated circuit chips 200 through the conductive features 270 and the redistribution structure 300 .
- the element 280 includes a package structure that contains one or more integrated circuit chips. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the element 280 is an integrated circuit chip. The element 280 can be varied according to requirements.
- one or more connectors 290 are used to bond the element 280 over the integrated circuit chips 200 , as shown in FIG. 1 .
- the connectors 290 are electrically connected to conductive features 285 , such as conductive pads, in the element 280 .
- the connectors 290 include solder bumps, solder balls, metal pillars, other suitable connectors, or a combination thereof.
- FIG. 1 shows that there is one element 280 over the integrated circuit chips 200 , embodiments of the disclosure are not limited thereto. In some other embodiments, there are multiple elements 280 over the integrated circuit chips 200 .
- the package structure 100 does not include the element 280 and the connectors 290 .
- the package structure 100 shown in FIG. 1 is further bonded to a substrate 350 through the bumps 330 .
- the substrate 350 is a printed circuit board, another package structure, or another suitable substrate.
- the bumps 330 are electrically connected to conductive features 355 , such as conductive pads, in the substrate 350 .
- the conductive features 355 and the bumps 330 are substantially aligned to each other.
- the conductive features 355 are not aligned to the chip edge 212 are or misaligned to the chip edge 212 .
- FIG. 2 is a top view of a package structure, in accordance with some embodiments.
- FIG. 2 shows a portion of the package structure 100 shown in FIG. 1 .
- FIG. 2 illustrates the integrated circuit chip 200 , the package layer 260 , the bumps 330 and some of the UBM elements 340 without other features in the package structure 100 for a better understanding of the structure.
- the chip edge 212 shown in FIG. 2 is substantially aligned to the interface 360 between the integrated circuit chip 200 and the package layer 260 and/or the boundary 322 between the regions 320 A and 320 B of the passivation layer 320 .
- the integrated circuit chip 200 is embedded in the package layer 260 , in accordance with some embodiments.
- the bumps 330 are projected onto the semiconductor substrate 210 of the integrated circuit chip 200 or the package layer 260 .
- the projections of the bumps 330 are taken along a plane that is parallel to the main surface of the integrated circuit chip 200 .
- the main surface of the integrated circuit chip 200 may be the active surface or the non-active surface of the integrated circuit chip 200 .
- the chip edge 212 is separated from the projections of the bumps 330 , in accordance with some embodiments.
- the chip edge 212 is not covered by any one of the projections of the bumps 330 (in a top view or a cross-sectional view). In some embodiments, the chip edge 212 does not extend across any of the projections of the bumps 330 .
- the bumps 330 comprise bumps 330 A and 330 B that are on two opposite sides of the chip edge 212 .
- the bumps 330 A and 330 B are on inner and outer sides of the chip edge 212 , respectively.
- the bumps 330 A and 330 B may be referred to as inner and outer bumps, respectively.
- the bumps 330 A and 330 B are arranged to be substantially aligned to each other.
- one of the bumps 330 A is arranged to be not aligned to one of the bumps 330 B.
- the bumps 330 A are projected onto the active surface 202 of the semiconductor substrate 210 without overlapping and intersecting the chip edge 212 and the package layer 260 , in accordance with some embodiments.
- the projections of the bumps 330 A are arranged in a row, a ring or an array inside the chip edge 212 .
- the bump pitch between each two neighboring bumps of the bumps 330 A is in a range from about 300 ⁇ m to about 500 ⁇ m.
- the bumps 330 A comprise one or more center bumps and peripheral bumps.
- the peripheral bumps are arranged along the chip edge 212 and are closer to the chip edge 212 than the center bumps. In some embodiments, all the center and peripheral bumps of the bumps 330 A are surrounded by the chip edge 212 . In some embodiments, each of the bumps 330 A does not vertically overlap and cover the chip edge 212 .
- the bumps 330 A are spaced apart from the chip edge 212 along a direction that is substantially parallel to the main surface of the integrated circuit chip 200 .
- the chip edge 212 is separated from the projections of the peripheral bumps 330 A on the integrated circuit chip 200 by a distance X.
- the distance X is in a range from about 15 ⁇ m to about 100 ⁇ m.
- the ratio between any two of the distances is in a range from about 0.5 to about 2.
- the bumps 330 B are projected onto the bottom surface 262 of the package layer 260 without overlapping and intersecting the chip edge 212 and the semiconductor substrate 210 , in accordance with some embodiments.
- the bumps 330 B are arranged in a row, a ring or an array outside the chip edge 212 .
- the bump pitch between each two neighboring bumps of the bumps 330 B is in a range from about 300 ⁇ m to about 500 ⁇ m.
- the bumps 330 A and 330 B have the same or different bump pitches according to requirements.
- the bumps 330 B discontinuously or discretely surround the chip edge 212 . In some embodiments, each of the bumps 330 B does not vertically overlap and cover the chip edge 212 . In some embodiments, the bumps 330 B and the peripheral bumps of the bumps 330 A are right next to each other. In some embodiments, there is no bump between the bumps 330 B and the peripheral bumps of the bumps 330 A.
- the bumps 330 B are spaced apart from the chip edge 212 along a direction that is substantially parallel to the main surface of the integrated circuit chip 200 .
- the chip edge 212 is separated from the projections of the bumps 330 B on the package layer 260 by a distance Y.
- the distance Y is in a range from about 15 ⁇ m to about 100 ⁇ m.
- the ratio between any two of the distances is in a range from about 0.5 to about 2.
- the distance Y is substantially equal to the distance X. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the distance Y is less or greater than the distance X.
- the distance D 1 between two neighboring bumps of the bumps 330 A.
- the distance D 2 between two neighboring bumps of the bumps 330 B.
- the distance D 2 is substantially equal to the distance D 1 .
- embodiments of the disclosure are not limited thereto.
- the distance D 2 is less or greater than the distance D 1 .
- the bumps 330 B may have a concentrated or sparse arrangement in comparison with the bumps 330 A.
- the distance D 3 is in a range from about 30 ⁇ m to about 200 In some embodiments, the distance D 3 is in a range from about 50 ⁇ m to about 200 In some embodiments, the ratio (D 3 /P) of the distance D 3 to the (minimum) bump pitch P between two adjacent bumps of the bumps 330 A or 330 B is in a range from about 0.1 to about 0.15.
- the distance D 1 is less than the distance D 3 . In some embodiments, the distance D 2 is less than the distance D 3 . However, embodiments of the disclosure are not limited thereto. In some other embodiments, the distance D 1 and/or the distance D 2 is substantially equal to or greater than the distance D 3 .
- a keep-out zone 370 is defined in the package structure 100 shown in FIGS. 1 and 2 .
- the bumps 330 A and 330 B are kept away from the chip edge 212 by the keep-out zone 370 . In other words, there is no bump projected in the keep-out zone 370 .
- the keep-out zone 370 is substantially aligned to the chip edge 212 and extends along the chip edge 212 , in accordance with some embodiments.
- the keep-out zone 370 continuously surrounds the bumps 330 A.
- the bumps 330 B discontinuously or discretely surround the keep-out zone 370 .
- the keep-out zone 370 is a hollow ring region.
- the keep-out zone 370 has a width Z spanning the chip edge 212 .
- the width Z is in a range from about 30 ⁇ m to about 200 ⁇ m. In some embodiments, the width Z is in a range from about 50 ⁇ m to about 200 ⁇ m.
- the boundary of the keep-out zone 370 is spaced apart from the chip edge 212 by a distance that is in a range from about 15 ⁇ m to about 100 ⁇ m.
- FIG. 2 shows that multiple boundaries of the keep-out zone 370 are spaced apart from the chip edge 212 by substantially the same distance, embodiments of the disclosure are not limited thereto. In some other embodiments, multiple boundaries of the keep-out zone 370 are spaced apart from the chip edge 212 by different distances.
- each of the UBM elements 340 is substantially aligned to one of the bumps 330 comprising the bumps 330 A and 330 B.
- the UBM elements 340 comprises center, peripheral and outer UBM elements that are substantially aligned to and connect to the center, peripheral and outer bumps, respectively.
- the UBM elements 340 are projected onto the integrated circuit chip 200 or the package layer 260 , in accordance with some embodiments.
- the projections of the UBM elements 340 are taken along a plane that is parallel to the main surface of the integrated circuit chip 200 .
- the chip edge 212 is separated from the projections of the UBM elements 340 . In some embodiments, the chip edge 212 is free from being covered by any of the UBM elements 340 . In some embodiments, the chip edge 212 does not extend across the projections of the UBM elements 340 and does not overlap the projections of the UBM elements 340 . In some embodiments, no UBM element 340 is projected in the keep-out zone 370 .
- the conductive features 355 of the substrate 350 (shown in FIG. 1 ) and the bumps 330 , which are bonded to the conductive features 355 are substantially aligned to each other.
- the chip edge 212 is spaced apart from the projections of the conductive features 355 on the integrated circuit chip 200 and the package layer 260 .
- the conductive features 355 do not vertically overlap the chip edge 212 , as shown in FIG. 1 .
- no conductive feature 355 is projected in the keep-out zone 370 .
- Embodiments of the disclosure are not limited thereto.
- one or more of the conductive features of the substrate 350 partially overlap the chip edge 212 .
- FIG. 3 is a top view of a package structure, in accordance with some embodiments. In some embodiments, FIG. 3 shows a portion of the package structure 100 shown in FIG. 1 . The package structure shown in FIG. 3 is similar to the package structure illustrated in the aforementioned embodiments shown in FIGS. 1 and 2 .
- each of the integrated circuit chips 200 has a chip edge 212 .
- the chip edges 212 of the integrated circuit chips 200 are right next to each other.
- the interval S between two adjacent chip edges 212 of the integrated circuit chips 200 is in a range from about 20 ⁇ m to about 100 ⁇ m. In some embodiments, the interval S is in a range from about 50 ⁇ m to about 100 ⁇ m. In some embodiments, the interval S is less than the bump pitch P between two adjacent bumps of the bumps 330 A and 330 B.
- the projections of the bumps 330 A are inside the chip edges 212 and the projections of the bumps 330 B are outsides the chip edges 212 , in accordance with some embodiments.
- the projections of the bumps 330 B are further outside the interval S between the integrated circuit chips 200 .
- the bumps 330 B are arranged outside the interval S so that the chip edges 212 are partially surrounded by the bumps 330 B.
- the shortest distance between two adjacent bumps of the bumps 330 A, which are inside different chip edges 212 is greater than the shortest distance between two adjacent bumps of the bumps 330 A, which are inside the same chip edges 212 .
- the UBM elements 340 are projected onto the integrated circuit chip 200 or the package layer 260 , in accordance with some embodiments. In some embodiments, the projections of the UBM elements 340 are arranged outside a region (the interval S) between the integrated circuit chips 200 .
- the shortest distance between two adjacent UBM elements 340 is greater than the shortest distance between two adjacent UBM elements 340 , which are inside the same chip edges 212 .
- the keep-out zone 370 extends along the chip edges 212 , in accordance with some embodiments.
- the region between the integrated circuit chips 200 is substantially completely within the keep-out zone 370 .
- embodiments of the disclosure are not limited thereto. In some other embodiments, there is substantially the same distance between the boundary of the keep-out zone 370 and the chip edges 212 .
- embodiments of the disclosure are not limited thereto. Some other embodiments of the disclosure include one or more bumps projected between the integrated circuit chips 200 .
- FIG. 4 is a top view of a package structure, in accordance with some embodiments.
- FIG. 4 shows a portion of the package structure 100 shown in FIG. 1 .
- the package structure shown in FIG. 4 is similar to the package structure illustrated in the aforementioned embodiments shown in FIGS. 1, 2 and 3 .
- the interval S between two adjacent chip edges 212 is greater than the bump pitch P between two adjacent bumps of the bumps 330 A and 330 B, in accordance with some embodiments. In some other embodiments, the interval S between two adjacent chip edges 212 is equal to the bump pitch P between two adjacent bumps of the bumps 330 A and 330 B. In some embodiments, the interval S between two adjacent chip edges 212 is in a range from about 20 ⁇ m to about 100 ⁇ m. In some embodiments, the interval S is in a range from about 50 ⁇ m to about 100 ⁇ m.
- one or more of the bumps 330 B are inside the region (the interval S) between the integrated circuit chips 200 , in accordance with some embodiments.
- one of the bumps 330 B inside the region between the integrated circuit chips 200 is right next to the chip edges 212 .
- the bumps 330 B inside and outside the region between the integrated circuit chips 200 together surround each side of the chip edges 212 .
- one of the bumps 330 B inside the region is spaced apart from two adjacent chip edges 212 by different distances.
- embodiments of the disclosure are not limited thereto.
- one of the bumps 330 B inside the region is spaced apart from two adjacent chip edges 212 by substantially the same distance.
- one or more of the UBM elements 340 are projected onto the region between the integrated circuit chips 200 , in accordance with some embodiments.
- one of the UBM elements 340 inside the region is spaced apart from two adjacent chip edges 212 by different distances.
- keep-out zones 370 there are multiple keep-out zones 370 , in accordance with some embodiments.
- Each of the keep-out zones 370 extends along one of the chip edges 212 .
- the keep-out zones 370 are separated from each other.
- the region between the integrated circuit chips 200 is partially within the keep-out zones 370 .
- Embodiments of the disclosure provide a package structure.
- the package structure includes an integrated circuit chip having a chip edge embedded in a package layer.
- the package structure also includes a redistribution structure below the integrated circuit chip and the package layer.
- the package structure further includes bumps below the redistribution structure.
- the bumps are configured to bond the package structure onto a substrate, such as a circuit board.
- a substrate such as a circuit board.
- the bumps which are right adjacent to the interface between the integrated circuit chip and the package layer, are spaced apart from the interface without overlapping the interface. As a result, the underlying stress is misaligned to the overlying stress. Stress on the redistribution structure is distributed and relieved. Accordingly, damage to the redistribution structure that may result from stress concentration along the interface or the chip edge is mitigated or prevented. Therefore, reliability of the package structure is significantly enhanced.
- the bumps are separated from the chip edge of the integrated circuit chips by a distance (such as the distance X or Y).
- the distance is in a range from about 15 ⁇ m to about 100 ⁇ m.
- a keep-out zone (such as the keep-out zone 370 ) is defined in the package structure to keep the bumps away from the chip edge.
- the width of the keep-out zone is in a range from about 30 ⁇ m to about 200 ⁇ m.
- the distance should be substantially equal to or greater than about 15 ⁇ m, and the width of the keep-out zone should be substantially equal to or greater than about 30 ⁇ m. If the distance is less than about 15 ⁇ m or the width is less than about 30 ⁇ m, the underlying stress and the overlying stress, which is caused by a mismatch of the CTE between heterogeneous materials, overlaps with each other. Stress, which propagates from different directions, is focused and concentrated on substantially the same position of the redistribution structure. As a result, cracks may be formed in one or more of the redistribution layers and one or more of the passivation layers of the redistribution structure. However, embodiments of the disclosure are not limited thereto. In some other cases, the distance may be less than about 15 ⁇ m or the width may be less than about 30 ⁇ m.
- the distance should be substantially equal to or less than about 100 ⁇ m, and the width of the keep-out zone should be substantially equal to or less than about 200 ⁇ m. If the distance is greater than about 100 ⁇ m or the width is greater than about 200 ⁇ m, some issues may arise. For example, it may be difficult to arrange the bumps and the bump placement layout may be limited. Also, the number of bumps in a predetermined package area may be limited. However, embodiments of the disclosure are not limited thereto. In some other cases, the distance may be greater than about 100 ⁇ m or the width may be greater than about 200 ⁇ m.
- Embodiments of the disclosure are not limited to the package structure shown in FIGS. 1-4 . Many variations and/or modifications can be made to embodiments of the disclosure. For example, although the embodiments shown in FIG. 1 provide a package structure having a “fan-out” feature, embodiments of the disclosure are not limited thereto. Some other embodiments of the disclosure include a package structure having a “fan-in” feature.
- the disclosure is applied to a package structure including a redistribution layer connected to a bump.
- the redistribution layer extends across a chip edge of an integrated circuit chip while the bumps are not aligned to the chip edge as viewed from a top view.
- the disclosure can be applied to any suitable structure including conductive lines, which overlap an interface between features made of different materials and connect to a bump.
- a package structure in accordance with some embodiments, includes a molding layer and a first chip having a first corner and a second corner and a second chip having a third corner and a fourth corner embedded in the molding layer.
- the package structure also includes first bumps electrically connected to the first chip without overlapping the first chip and the second chip.
- the first corner and the second corner of the first chip and the third corner and the fourth corner of the second chip form a first region in a top view, and no bump overlaps the first region.
- a package structure in accordance with some embodiments, includes a molding layer and a first chip having a first chip edge and a second chip having a second chip edge embedded in the molding layer.
- a first sidewall of the first chip edge is arranged facing a second sidewall of the second chip edge.
- the package structure also includes first bumps under the molding layer and outside the first chip edge and the second chip edge in a top view.
- a first line of the first bumps are aligned along the first sidewall of the first chip edge and a second line of the first bumps are aligned along the second sidewall of the second chip edge in top view, and a number of the first line of the first bumps is greater than a number of the second line of the first bumps.
- a package structure in accordance with some embodiments, includes a molding layer and a first chip and a second chip in the molding layer.
- the first chip has a first chip edge
- the second chip has a second chip edge.
- the package structure also includes first bumps under the molding layer and outside the first chip edge and the second chip edge in a top view.
- an interval between the first chip edge and the second chip edge is smaller than a pitch between two of the first bumps positioned next to each other.
- a package structure in accordance with some embodiments, includes a redistribution layer and a first integrated circuit chip having a first chip edge and a second integrated circuit chip having a second chip edge over the redistribution layer.
- the package structure also includes first bumps electrically connected to the first integrated circuit chip through the redistribution layer.
- the first bumps overlap the first integrated circuit chip and are arranged along a first chip edge of the first integrated circuit chip.
- the package structure further includes second bumps electrically connected to the first integrated circuit chip through the redistribution layer without overlapping the first integrated circuit chip and the second integrated circuit chip.
- none of the second bumps is arranged between the first chip edge and the second chip edge.
- a package structure in accordance with some embodiments, includes a redistribution layer and a first integrated circuit chip having a first chip edge and a second integrated circuit chip having a second chip edge over the redistribution layer.
- the package structure also includes a first bump and a second bump connected to the redistribution layer.
- the first bump is directly under the first integrated circuit chip and the second bump is directly under a region between the first chip edge and the second chip edge, and distance between the second bump and the first chip edge is different from a distance between the first bump and the first chip edge.
- a package structure in accordance with some embodiments, includes a package layer and a first chip in the package layer, and the first chip has a first chip edge.
- the package structure also includes a second chip in the package layer, and the second chip has a second chip edge.
- the package structure further includes first bumps under the first chip and second bumps under the second chip.
- the package structure also includes third bumps under the package layer without overlapping the first chip and the second chip. In addition, a distance between the first chip edge and the second chip edge is smaller than a distance between two of the neighboring first bumps.
- a package structure in accordance with some embodiments, includes a molding compound.
- the package structure also includes an integrated circuit chip having a chip edge in the molding compound.
- the package structure further includes a passivation layer below the integrated circuit chip and the molding compound.
- the package structure includes a redistribution layer in the passivation layer.
- the package structure also includes first bumps electrically connected to the integrated circuit chip through the redistribution layer. The first bumps are inside the chip edge and arranged along the chip edge.
- the package structure further includes second bumps electrically connected to the integrated circuit chip through the redistribution layer. The second bumps are outside the chip edge and arranged along the chip edge. The first bumps are next to the second bumps. The first and second bumps are spaced apart from the chip edge.
- a package structure in accordance with some embodiments, includes a package layer.
- the package structure also includes an integrated circuit chip having a chip edge in the package layer.
- the package structure further includes a passivation layer below the integrated circuit chip and the package layer.
- the passivation layer comprises a first region and a second region adjoining the first region. There is a boundary between the first and second regions. The boundary is substantially aligned to the chip edge.
- the package structure includes a redistribution layer in the passivation layer. The redistribution layer extends across the boundary.
- the package structure also includes first bumps electrically connected to the integrated circuit chip through the redistribution layer.
- the first bumps are in the first region.
- the package structure further includes second bumps electrically connected to the integrated circuit chip through the redistribution layer.
- the second bumps are in the second region. The first bumps and the second bumps are next to the boundary and arranged along the boundary without overlapping the boundary.
- a package structure in accordance with some embodiments, includes a first chip having a first chip edge in a package layer.
- the package structure also includes a second chip having a second chip edge in the package layer. The second chip edge is next to the first chip edge. There is an interval between the first and second chip edges.
- the package structure further includes a passivation layer below the first chip, the second chip and the package layer.
- the package structure includes redistribution lines in the passivation layer.
- the package structure also includes bumps electrically connected to the first chip and the second chip through the redistribution lines.
- the bumps include first bumps inside the first chip edge.
- the bumps also include second bumps inside the second chip edge.
- the bumps further include third bumps outside the first and second chip edges.
- the third bumps are arranged outside a region between the first and second chip edges to partially surround the first and second chip edges if the interval is less than the bump pitch.
- One or more of the third bumps are arranged within the region if the interval is not less than the bump pitch.
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Abstract
Description
- This application is a Continuation application of U.S. patent application Ser. No. 16/725,321, filed on Dec. 23, 2019, which is a Continuation application of U.S. patent application Ser. No. 15/284,425, filed on Oct. 3, 2016 (now U.S. Pat. No. 10,515,899 issued on Dec. 24, 2019), the entire of which are incorporated by reference herein.
- With the constant evolution of semiconductor technology, semiconductor dies are increasingly becoming smaller. More functions, however, need to be integrated into these semiconductor dies. Accordingly, these semiconductor dies have increasingly greater numbers of I/O pads packaged into smaller areas, and the density of the I/O pads is quickly rising. As a result, the packaging of semiconductor dies is becoming more difficult.
- Package technologies can be divided into multiple categories. In one of the categories of packaging, dies are sawed from wafers before they are packaged onto other wafers, and only “known-good-dies” are packaged. An advantage of this packaging technology is the possibility of forming fan-out chip packages, which means that the I/O pads on a die can be redistributed to a greater area than the die itself. Therefore, the number of I/O pads packed on the surfaces of the dies can be increased.
- New packaging technologies have been developed to further improve the density and functions of semiconductor dies. These relatively new types of packaging technologies for semiconductor dies face manufacturing challenges, and they have not been entirely satisfactory in all respects.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1 is a cross-sectional view of a package structure, in accordance with some embodiments. -
FIG. 2 is a top view of a package structure, in accordance with some embodiments. -
FIG. 3 is a top view of a package structure, in accordance with some embodiments. -
FIG. 4 is a top view of a package structure, in accordance with some embodiments. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- Furthermore, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
- Embodiments of the disclosure provide a package structure with improved reliability. Stress, which may be caused by a mismatch of the coefficient of thermal expansion (CTE) between multiple heterogeneous materials in the package structure, is distributed. Therefore, damage to the package structure that may result from stress concentration is mitigated or eliminated.
- Some embodiments of the package structure are described.
FIG. 1 is a cross-sectional view of a package structure, in accordance with some embodiments. Additional features can be added to the package structure. Some of the features described below can be replaced or eliminated for different embodiments. - As shown in
FIG. 1 , apackage structure 100 includes multipleintegrated circuit chips 200, in accordance with some embodiments. In some embodiments, theintegrated circuit chips 200 have anactive surface 202. Theintegrated circuit chips 200 may be device chips/dies including transistors, diodes, or other suitable integrated circuit elements. The device chips may also include capacitors, inductors, resistors, other integrated circuit elements, or a combination thereof. In some embodiments, the integratedcircuit chips 200 are sensor chips, logic chips, central processing unit (CPU) chips, memory chips, or other suitable chips. The integratedcircuit chips 200 may have substantially the same size or different sizes according to requirements. - Each of the
integrated circuit chips 200 may include asemiconductor substrate 210, apassivation layer 220,conductive pads 230,connectors 240, and aprotection layer 250. In some embodiments, thesemiconductor substrate 210 includes silicon or another elementary semiconductor material such as germanium. In some other embodiments, thesemiconductor substrate 210 includes a compound semiconductor. The compound semiconductor may include silicon germanium, gallium arsenide, silicon carbide, another suitable compound semiconductor, or a combination thereof. - A variety of device elements may be formed in or over the
semiconductor substrate 210. The device elements include active devices and/or passive devices. Theconductive pads 230 are in thepassivation layer 220 and are electrically connected to the device elements. Theconnectors 240 are surrounded by theprotection layer 250 and are electrically connected to theconductive pads 230. - Although
FIG. 1 shows that thepackage structure 100 includes multipleintegrated circuit chips 200, embodiments of the disclosure are not limited thereto. In some other embodiments, thepackage structure 100 includes only one integrated circuit die 200. - As shown in
FIG. 1 , theintegrated circuit chips 200 are continuously surrounded by apackage layer 260, in accordance with some embodiments. In some embodiments, thepackage layer 260 has abottom surface 262 that is substantially coplanar with theactive surface 202 of the integratedcircuit chips 200. In some embodiments, thepackage layer 260 has a top surface that is substantially coplanar with the non-active surface of the integratedcircuit chips 200. - In some embodiments, the
package layer 260 is in direct contact with thesemiconductor substrate 210, thepassivation layer 220, and theprotection layer 250. In some embodiments, each of theintegrated circuit chips 200 has achip edge 212 in direct contact with thepackage layer 260. As a result, there is aninterface 360 between the integrated circuit chips 200 (or the semiconductor substrate 210) and thepackage layer 260. In some embodiments, theinterface 360 is substantially coplanar with thechip edge 212. - In some embodiments, the
package layer 260 includes a polymer material. In some embodiments, thepackage layer 260 includes a molding compound. The material of thepackage layer 260 is different from the material of thesemiconductor substrate 210. In some embodiments, the material of thepackage layer 260 is different from the material of thepassivation layer 220 and/or theprotection layer 250. - The
package layer 260 also continuously surrounds multipleconductive features 270, as shown inFIG. 1 in accordance with some embodiments. In some embodiments, theconductive features 270 are on two opposite sides of the integrated circuit chips 200. In some other embodiments, theconductive features 270 discontinuously or discretely surround the integrated circuit chips 200. In some embodiments, there is one or more of theconductive features 270 between two of the integrated circuit chips 200. - In some embodiments, the
conductive features 270 are conductive pillars or other suitable structures. The conductive features 270 may be referred to as through interposer vias (TIVs). In some embodiments, theconductive features 270 include Cu, Al, nickel (Ni), platinum (Pt), lead-free solder (e.g., SnAg, SnCu, SnAgCu), another suitable conductive material, or a combination thereof. - Many variations and/or modifications can be made to embodiments of the disclosure. In some other embodiments, the
package structure 100 does not include the conductive features 270. - As shown in
FIG. 1 , thepackage structure 100 also includes aredistribution structure 300 below thebottom surface 262 of thepackage layer 260, in accordance with some embodiments. Theredistribution structure 300 is electrically connected to theconnectors 240 of theintegrated circuit chips 200 and the conductive features 270. In some embodiments, the front side (the active surface 202) of theintegrated circuit chips 200 faces theredistribution structure 300. In some other embodiments, the back side (the non-active surface) of theintegrated circuit chips 200 faces theredistribution structure 300. - The
redistribution structure 300 includes one or more redistribution layers and one or more passivation layers. For example, theredistribution structure 300 includes redistribution layers 310 in apassivation layer 320. - In some embodiments, the
passivation layer 320 includes aregion 320A and aregion 320B adjoining theregion 320A, as shown inFIG. 1 . In some embodiments, theregion 320B continuously surrounds theregion 320A. In some embodiments, there is aboundary 322 between theregion 320A and theregion 320B. In some embodiments, theboundary 322 is substantially aligned to thechip edge 212, as shown inFIG. 1 . - The
passivation layer 320 may include multiple sub-layers. In some embodiments, thepassivation layer 320 in theredistribution structure 300 is made of polybenzoxazole (PBO), benzocyclobutene (BCB), silicone, acrylates, siloxane, another suitable material, or a combination thereof. In some other embodiments, thepassivation layer 320 in theredistribution structure 300 is made of non-organic materials. The non-organic materials includes silicon oxide, un-doped silicate glass, silicon oxynitride, solder resist (SR), silicon nitride, silicon carbide, hexamethyldisilazane (HMDS), another suitable material, or a combination thereof. - Each of the redistribution layers 310 in the
passivation layer 320 includes multiple redistribution lines. In some embodiments, one or more of the redistribution lines in the redistribution layers 310 partially vertically overlap thechip edge 212 and extend along a direction intersecting thechip edge 212, as shown inFIG. 1 . In some embodiments, one or more of the redistribution lines in the redistribution layers 310 extend across theboundary 322 between theregion 320A and theregion 320B. - In some embodiments, the redistribution layers 310 in the
redistribution structure 300 are made of metal materials. The metal material includes copper (Cu), Cu alloy, aluminum (Al), Al alloy, tungsten (W), W alloy, titanium (Ti), Ti alloy, tantalum (Ta), Ta alloy, another suitable material, or a combination thereof. - The
package structure 100 further includesmultiple bumps 330 below thepassivation layer 320, as shown inFIG. 1 in accordance with some embodiments. Thebumps 330 are electrically connected to theintegrated circuit chips 200 through the redistribution layers 310 of theredistribution structure 300. Thebumps 330 and theintegrated circuit chips 200 are on two opposite sides of theredistribution structure 300. In some embodiments, thebumps 330 are not directly under theinterface 360 between theintegrated circuit chips 200 and thepackage layer 260. In some embodiments, none of thebumps 330 vertically overlaps thechip edge 212 and a chip corner of theintegrated circuit chip 200. - In some embodiments, the
bumps 330 are arranged within theregion 320A and theregion 320B of thepassivation layer 320. In some embodiments, some of thebumps 330 are next to theboundary 322 and arranged along theboundary 322 without overlapping theboundary 322. In some embodiments, none of thebumps 330 is aligned to theboundary 322 or directly under theboundary 322. - In some embodiments, the
bumps 330 include solder bumps, solder balls, metal pillars, other suitable connectors, or a combination thereof. In some embodiments, the (minimum) bump pitch P between two adjacent bumps of thebumps 330 is in a range from about 300 μm to about 500 μm. In some embodiments, some of thebumps 330 have substantially the same bump pitch. However, embodiments of the disclosure are not limited thereto. In some other embodiments, some of thebumps 330 have different bump pitches. - As shown in
FIG. 1 , there is an under-bump metallurgy (UBM)element 340 between theredistribution structure 300 and one of thebumps 330, in accordance with some embodiments. In some embodiments, theUBM element 340 is substantially aligned to one of thebumps 330. In some embodiments, there areUBM elements 340 and each of theUBM elements 340 is substantially aligned to one of thebumps 330. In some embodiments, theUBM element 340 is in direct contact with one of thebumps 330. In some embodiments, the width W of theUBM element 340 is in a range from about 150 μm to about 300 μm. - In some embodiments, the
UBM element 340 includes a diffusion barrier layer and a seed layer. The diffusion barrier layer may include tantalum nitride, titanium nitride, tantalum, titanium, another suitable diffusion barrier material, or a combination thereof. The seed layer may be a copper seed layer on the diffusion barrier layer. The copper seed layer may include copper or one of the copper alloys that include silver, chromium, nickel, tin, gold, or a combination thereof. - As shown in
FIG. 1 , anelement 280 is stacked over theintegrated circuit chips 200, in accordance with some embodiments. Theelement 280 and theredistribution structure 300 are on two opposite sides of the integrated circuit chips 200. Theelement 280 is electrically connected to theintegrated circuit chips 200 through theconductive features 270 and theredistribution structure 300. - In some embodiments, the
element 280 includes a package structure that contains one or more integrated circuit chips. However, embodiments of the disclosure are not limited thereto. In some other embodiments, theelement 280 is an integrated circuit chip. Theelement 280 can be varied according to requirements. - In some embodiments, one or
more connectors 290 are used to bond theelement 280 over theintegrated circuit chips 200, as shown inFIG. 1 . Theconnectors 290 are electrically connected toconductive features 285, such as conductive pads, in theelement 280. Theconnectors 290 include solder bumps, solder balls, metal pillars, other suitable connectors, or a combination thereof. - Although
FIG. 1 shows that there is oneelement 280 over theintegrated circuit chips 200, embodiments of the disclosure are not limited thereto. In some other embodiments, there aremultiple elements 280 over the integrated circuit chips 200. - Many variations and/or modifications can be made to embodiments of the disclosure. In some other embodiments, the
package structure 100 does not include theelement 280 and theconnectors 290. - In some embodiments, the
package structure 100 shown inFIG. 1 is further bonded to asubstrate 350 through thebumps 330. In some embodiments, thesubstrate 350 is a printed circuit board, another package structure, or another suitable substrate. Thebumps 330 are electrically connected toconductive features 355, such as conductive pads, in thesubstrate 350. In some embodiments, theconductive features 355 and thebumps 330 are substantially aligned to each other. In some embodiments, theconductive features 355 are not aligned to thechip edge 212 are or misaligned to thechip edge 212. -
FIG. 2 is a top view of a package structure, in accordance with some embodiments. In some embodiments,FIG. 2 shows a portion of thepackage structure 100 shown inFIG. 1 .FIG. 2 illustrates theintegrated circuit chip 200, thepackage layer 260, thebumps 330 and some of theUBM elements 340 without other features in thepackage structure 100 for a better understanding of the structure. In some embodiments, thechip edge 212 shown inFIG. 2 is substantially aligned to theinterface 360 between theintegrated circuit chip 200 and thepackage layer 260 and/or theboundary 322 between theregions passivation layer 320. - As shown in
FIG. 2 , theintegrated circuit chip 200 is embedded in thepackage layer 260, in accordance with some embodiments. In some embodiments, thebumps 330 are projected onto thesemiconductor substrate 210 of theintegrated circuit chip 200 or thepackage layer 260. The projections of thebumps 330 are taken along a plane that is parallel to the main surface of theintegrated circuit chip 200. The main surface of theintegrated circuit chip 200 may be the active surface or the non-active surface of theintegrated circuit chip 200. - As shown in
FIG. 2 , thechip edge 212 is separated from the projections of thebumps 330, in accordance with some embodiments. In some embodiments, thechip edge 212 is not covered by any one of the projections of the bumps 330 (in a top view or a cross-sectional view). In some embodiments, thechip edge 212 does not extend across any of the projections of thebumps 330. - In accordance with some embodiments, the
bumps 330 comprisebumps chip edge 212. For example, thebumps chip edge 212, respectively. Thebumps bumps bumps 330A is arranged to be not aligned to one of thebumps 330B. - As shown in
FIG. 2 , thebumps 330A are projected onto theactive surface 202 of thesemiconductor substrate 210 without overlapping and intersecting thechip edge 212 and thepackage layer 260, in accordance with some embodiments. In some embodiments, the projections of thebumps 330A are arranged in a row, a ring or an array inside thechip edge 212. In some embodiments, the bump pitch between each two neighboring bumps of thebumps 330A is in a range from about 300 μm to about 500 μm. - In some embodiments, the
bumps 330A comprise one or more center bumps and peripheral bumps. The peripheral bumps are arranged along thechip edge 212 and are closer to thechip edge 212 than the center bumps. In some embodiments, all the center and peripheral bumps of thebumps 330A are surrounded by thechip edge 212. In some embodiments, each of thebumps 330A does not vertically overlap and cover thechip edge 212. - In some embodiments, the
bumps 330A are spaced apart from thechip edge 212 along a direction that is substantially parallel to the main surface of theintegrated circuit chip 200. In some embodiments, thechip edge 212 is separated from the projections of theperipheral bumps 330A on theintegrated circuit chip 200 by a distance X. In some embodiments, the distance X is in a range from about 15 μm to about 100 μm. In some embodiments, there are multiple different distances between thechip edge 212 and the projections ofmultiple bumps 330A. In some embodiments, the ratio between any two of the distances is in a range from about 0.5 to about 2. - As shown in
FIG. 2 , thebumps 330B are projected onto thebottom surface 262 of thepackage layer 260 without overlapping and intersecting thechip edge 212 and thesemiconductor substrate 210, in accordance with some embodiments. In some embodiments, thebumps 330B are arranged in a row, a ring or an array outside thechip edge 212. In some embodiments, the bump pitch between each two neighboring bumps of thebumps 330B is in a range from about 300 μm to about 500 μm. Thebumps - In some embodiments, the
bumps 330B discontinuously or discretely surround thechip edge 212. In some embodiments, each of thebumps 330B does not vertically overlap and cover thechip edge 212. In some embodiments, thebumps 330B and the peripheral bumps of thebumps 330A are right next to each other. In some embodiments, there is no bump between thebumps 330B and the peripheral bumps of thebumps 330A. - In some embodiments, the
bumps 330B are spaced apart from thechip edge 212 along a direction that is substantially parallel to the main surface of theintegrated circuit chip 200. In some embodiments, thechip edge 212 is separated from the projections of thebumps 330B on thepackage layer 260 by a distance Y. In some embodiments, the distance Y is in a range from about 15 μm to about 100 μm. In some embodiments, there are multiple different distances between thechip edge 212 and the projections ofmultiple bumps 330B. In some embodiments, the ratio between any two of the distances is in a range from about 0.5 to about 2. - In some embodiments, the distance Y is substantially equal to the distance X. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the distance Y is less or greater than the distance X.
- As shown in
FIG. 2 , there is a distance D1 between two neighboring bumps of thebumps 330A. There is a distance D2 between two neighboring bumps of thebumps 330B. In some embodiments, the distance D2 is substantially equal to the distance D1. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the distance D2 is less or greater than the distance D1. In other words, thebumps 330B may have a concentrated or sparse arrangement in comparison with thebumps 330A. - As shown in
FIG. 2 , there is a distance D3 between one of thebumps 330A and one of thebumps 330B that are right next to thechip edge 212. In some embodiments, the distance D3 is in a range from about 30 μm to about 200 In some embodiments, the distance D3 is in a range from about 50 μm to about 200 In some embodiments, the ratio (D3/P) of the distance D3 to the (minimum) bump pitch P between two adjacent bumps of thebumps - In some embodiments, the distance D1 is less than the distance D3. In some embodiments, the distance D2 is less than the distance D3. However, embodiments of the disclosure are not limited thereto. In some other embodiments, the distance D1 and/or the distance D2 is substantially equal to or greater than the distance D3.
- In accordance with some embodiments, a keep-out
zone 370 is defined in thepackage structure 100 shown inFIGS. 1 and 2 . Thebumps chip edge 212 by the keep-outzone 370. In other words, there is no bump projected in the keep-outzone 370. - As shown in
FIG. 2 , the keep-outzone 370 is substantially aligned to thechip edge 212 and extends along thechip edge 212, in accordance with some embodiments. In some embodiments, the keep-outzone 370 continuously surrounds thebumps 330A. In some embodiments, thebumps 330B discontinuously or discretely surround the keep-outzone 370. In some embodiments, the keep-outzone 370 is a hollow ring region. - In some embodiments, the keep-out
zone 370 has a width Z spanning thechip edge 212. In some embodiments, the width Z is in a range from about 30 μm to about 200 μm. In some embodiments, the width Z is in a range from about 50 μm to about 200 μm. - In some embodiments, the boundary of the keep-out
zone 370 is spaced apart from thechip edge 212 by a distance that is in a range from about 15 μm to about 100 μm. AlthoughFIG. 2 shows that multiple boundaries of the keep-outzone 370 are spaced apart from thechip edge 212 by substantially the same distance, embodiments of the disclosure are not limited thereto. In some other embodiments, multiple boundaries of the keep-outzone 370 are spaced apart from thechip edge 212 by different distances. - As mentioned above, each of the
UBM elements 340 is substantially aligned to one of thebumps 330 comprising thebumps UBM elements 340 comprises center, peripheral and outer UBM elements that are substantially aligned to and connect to the center, peripheral and outer bumps, respectively. - As shown in
FIG. 2 , theUBM elements 340 are projected onto theintegrated circuit chip 200 or thepackage layer 260, in accordance with some embodiments. The projections of theUBM elements 340 are taken along a plane that is parallel to the main surface of theintegrated circuit chip 200. - In some embodiments, the
chip edge 212 is separated from the projections of theUBM elements 340. In some embodiments, thechip edge 212 is free from being covered by any of theUBM elements 340. In some embodiments, thechip edge 212 does not extend across the projections of theUBM elements 340 and does not overlap the projections of theUBM elements 340. In some embodiments, noUBM element 340 is projected in the keep-outzone 370. - As mentioned above, in some embodiments, the
conductive features 355 of the substrate 350 (shown inFIG. 1 ) and thebumps 330, which are bonded to theconductive features 355, are substantially aligned to each other. In some embodiments, thechip edge 212 is spaced apart from the projections of theconductive features 355 on theintegrated circuit chip 200 and thepackage layer 260. As a result, theconductive features 355 do not vertically overlap thechip edge 212, as shown inFIG. 1 . In some embodiments, noconductive feature 355 is projected in the keep-outzone 370. - Embodiments of the disclosure are not limited thereto. In some other embodiments, one or more of the conductive features of the
substrate 350 partially overlap thechip edge 212. - Many variations and/or modifications can be made to embodiments of the disclosure.
FIG. 3 is a top view of a package structure, in accordance with some embodiments. In some embodiments,FIG. 3 shows a portion of thepackage structure 100 shown inFIG. 1 . The package structure shown inFIG. 3 is similar to the package structure illustrated in the aforementioned embodiments shown inFIGS. 1 and 2 . - As shown in
FIG. 3 , multipleintegrated circuit chips 200 are embedded in thepackage layer 260, in accordance with some embodiments. Each of theintegrated circuit chips 200 has achip edge 212. In some embodiments, the chip edges 212 of theintegrated circuit chips 200 are right next to each other. - In some embodiments, the interval S between two adjacent chip edges 212 of the
integrated circuit chips 200 is in a range from about 20 μm to about 100 μm. In some embodiments, the interval S is in a range from about 50 μm to about 100 μm. In some embodiments, the interval S is less than the bump pitch P between two adjacent bumps of thebumps - As shown in
FIG. 3 , the projections of thebumps 330A are inside the chip edges 212 and the projections of thebumps 330B are outsides the chip edges 212, in accordance with some embodiments. In some embodiments, the projections of thebumps 330B are further outside the interval S between the integrated circuit chips 200. In some embodiments, thebumps 330B are arranged outside the interval S so that the chip edges 212 are partially surrounded by thebumps 330B. - In some embodiments, there is no bump projected between the integrated circuit chips 200. In some embodiments, the shortest distance between two adjacent bumps of the
bumps 330A, which are inside different chip edges 212, is greater than the shortest distance between two adjacent bumps of thebumps 330A, which are inside the same chip edges 212. - As shown in
FIG. 3 , theUBM elements 340 are projected onto theintegrated circuit chip 200 or thepackage layer 260, in accordance with some embodiments. In some embodiments, the projections of theUBM elements 340 are arranged outside a region (the interval S) between the integrated circuit chips 200. - In some embodiments, there is no UBM element projected between the integrated circuit chips 200. In some embodiments, the shortest distance between two
adjacent UBM elements 340, which are inside different chip edges 212, is greater than the shortest distance between twoadjacent UBM elements 340, which are inside the same chip edges 212. - As shown in
FIG. 3 , the keep-outzone 370 extends along the chip edges 212, in accordance with some embodiments. In some embodiments, the region between theintegrated circuit chips 200 is substantially completely within the keep-outzone 370. In some embodiments, there are different distances between the boundary of the keep-outzone 370 and the chip edges 212. However, embodiments of the disclosure are not limited thereto. In some other embodiments, there is substantially the same distance between the boundary of the keep-outzone 370 and the chip edges 212. - Many variations and/or modifications can be made to embodiments of the disclosure. For example, although the embodiments shown in
FIG. 3 illustrate that there is no bump projected between theintegrated circuit chips 200, embodiments of the disclosure are not limited thereto. Some other embodiments of the disclosure include one or more bumps projected between the integrated circuit chips 200. -
FIG. 4 is a top view of a package structure, in accordance with some embodiments. In some embodiments,FIG. 4 shows a portion of thepackage structure 100 shown inFIG. 1 . The package structure shown inFIG. 4 is similar to the package structure illustrated in the aforementioned embodiments shown inFIGS. 1, 2 and 3 . - As shown in
FIG. 4 , the interval S between two adjacent chip edges 212 is greater than the bump pitch P between two adjacent bumps of thebumps bumps - As shown in
FIG. 4 , one or more of thebumps 330B are inside the region (the interval S) between theintegrated circuit chips 200, in accordance with some embodiments. In some embodiments, one of thebumps 330B inside the region between theintegrated circuit chips 200 is right next to the chip edges 212. In some embodiments, thebumps 330B inside and outside the region between theintegrated circuit chips 200 together surround each side of the chip edges 212. - In some embodiments, one of the
bumps 330B inside the region is spaced apart from two adjacent chip edges 212 by different distances. However, embodiments of the disclosure are not limited thereto. In some other embodiments, one of thebumps 330B inside the region is spaced apart from two adjacent chip edges 212 by substantially the same distance. - As shown in
FIG. 4 , one or more of theUBM elements 340 are projected onto the region between theintegrated circuit chips 200, in accordance with some embodiments. In some embodiments, one of theUBM elements 340 inside the region is spaced apart from two adjacent chip edges 212 by different distances. - As shown in
FIG. 4 , there are multiple keep-outzones 370, in accordance with some embodiments. Each of the keep-outzones 370 extends along one of the chip edges 212. The keep-outzones 370 are separated from each other. In some embodiments, the region between theintegrated circuit chips 200 is partially within the keep-outzones 370. - Embodiments of the disclosure provide a package structure. The package structure includes an integrated circuit chip having a chip edge embedded in a package layer. The package structure also includes a redistribution structure below the integrated circuit chip and the package layer. The package structure further includes bumps below the redistribution structure. The bumps are configured to bond the package structure onto a substrate, such as a circuit board. In some cases, there may be overlying stress that is caused by a mismatch of the CTE between the integrated circuit chip and the package layer, and propagates into the redistribution structure. Also, there may be underlying stress that is caused by a mismatch of the CTE between the bumps and the circuit board, and propagates into the redistribution structure. The bumps, which are right adjacent to the interface between the integrated circuit chip and the package layer, are spaced apart from the interface without overlapping the interface. As a result, the underlying stress is misaligned to the overlying stress. Stress on the redistribution structure is distributed and relieved. Accordingly, damage to the redistribution structure that may result from stress concentration along the interface or the chip edge is mitigated or prevented. Therefore, reliability of the package structure is significantly enhanced.
- In accordance with some embodiments, the bumps are separated from the chip edge of the integrated circuit chips by a distance (such as the distance X or Y). The distance is in a range from about 15 μm to about 100 μm. In accordance with some embodiments, a keep-out zone (such as the keep-out zone 370) is defined in the package structure to keep the bumps away from the chip edge. The width of the keep-out zone is in a range from about 30 μm to about 200 μm.
- In some cases, the distance should be substantially equal to or greater than about 15 μm, and the width of the keep-out zone should be substantially equal to or greater than about 30 μm. If the distance is less than about 15 μm or the width is less than about 30 μm, the underlying stress and the overlying stress, which is caused by a mismatch of the CTE between heterogeneous materials, overlaps with each other. Stress, which propagates from different directions, is focused and concentrated on substantially the same position of the redistribution structure. As a result, cracks may be formed in one or more of the redistribution layers and one or more of the passivation layers of the redistribution structure. However, embodiments of the disclosure are not limited thereto. In some other cases, the distance may be less than about 15 μm or the width may be less than about 30 μm.
- In some cases, the distance should be substantially equal to or less than about 100 μm, and the width of the keep-out zone should be substantially equal to or less than about 200 μm. If the distance is greater than about 100 μm or the width is greater than about 200 μm, some issues may arise. For example, it may be difficult to arrange the bumps and the bump placement layout may be limited. Also, the number of bumps in a predetermined package area may be limited. However, embodiments of the disclosure are not limited thereto. In some other cases, the distance may be greater than about 100 μm or the width may be greater than about 200 μm.
- Embodiments of the disclosure are not limited to the package structure shown in
FIGS. 1-4 . Many variations and/or modifications can be made to embodiments of the disclosure. For example, although the embodiments shown inFIG. 1 provide a package structure having a “fan-out” feature, embodiments of the disclosure are not limited thereto. Some other embodiments of the disclosure include a package structure having a “fan-in” feature. - According to some embodiments, the disclosure is applied to a package structure including a redistribution layer connected to a bump. The redistribution layer extends across a chip edge of an integrated circuit chip while the bumps are not aligned to the chip edge as viewed from a top view. Many variations and/or modifications can be made to embodiments of the disclosure. In some other embodiments, the disclosure can be applied to any suitable structure including conductive lines, which overlap an interface between features made of different materials and connect to a bump.
- In accordance with some embodiments, a package structure is provided. The package structure includes a molding layer and a first chip having a first corner and a second corner and a second chip having a third corner and a fourth corner embedded in the molding layer. The package structure also includes first bumps electrically connected to the first chip without overlapping the first chip and the second chip. In addition, the first corner and the second corner of the first chip and the third corner and the fourth corner of the second chip form a first region in a top view, and no bump overlaps the first region.
- In accordance with some embodiments, a package structure is provided. The package structure includes a molding layer and a first chip having a first chip edge and a second chip having a second chip edge embedded in the molding layer. In addition, a first sidewall of the first chip edge is arranged facing a second sidewall of the second chip edge. The package structure also includes first bumps under the molding layer and outside the first chip edge and the second chip edge in a top view. In addition, a first line of the first bumps are aligned along the first sidewall of the first chip edge and a second line of the first bumps are aligned along the second sidewall of the second chip edge in top view, and a number of the first line of the first bumps is greater than a number of the second line of the first bumps.
- In accordance with some embodiments, a package structure is provided. The package structure includes a molding layer and a first chip and a second chip in the molding layer. In addition, the first chip has a first chip edge, and the second chip has a second chip edge. The package structure also includes first bumps under the molding layer and outside the first chip edge and the second chip edge in a top view. In addition, an interval between the first chip edge and the second chip edge is smaller than a pitch between two of the first bumps positioned next to each other.
- In accordance with some embodiments, a package structure is provided. The package structure includes a redistribution layer and a first integrated circuit chip having a first chip edge and a second integrated circuit chip having a second chip edge over the redistribution layer. The package structure also includes first bumps electrically connected to the first integrated circuit chip through the redistribution layer. In addition, the first bumps overlap the first integrated circuit chip and are arranged along a first chip edge of the first integrated circuit chip. The package structure further includes second bumps electrically connected to the first integrated circuit chip through the redistribution layer without overlapping the first integrated circuit chip and the second integrated circuit chip. In addition, none of the second bumps is arranged between the first chip edge and the second chip edge.
- In accordance with some embodiments, a package structure is provided. The package structure includes a redistribution layer and a first integrated circuit chip having a first chip edge and a second integrated circuit chip having a second chip edge over the redistribution layer. The package structure also includes a first bump and a second bump connected to the redistribution layer. In addition, the first bump is directly under the first integrated circuit chip and the second bump is directly under a region between the first chip edge and the second chip edge, and distance between the second bump and the first chip edge is different from a distance between the first bump and the first chip edge.
- In accordance with some embodiments, a package structure is provided. The package structure includes a package layer and a first chip in the package layer, and the first chip has a first chip edge. The package structure also includes a second chip in the package layer, and the second chip has a second chip edge. The package structure further includes first bumps under the first chip and second bumps under the second chip. The package structure also includes third bumps under the package layer without overlapping the first chip and the second chip. In addition, a distance between the first chip edge and the second chip edge is smaller than a distance between two of the neighboring first bumps.
- In accordance with some embodiments, a package structure is provided. The package structure includes a molding compound. The package structure also includes an integrated circuit chip having a chip edge in the molding compound. The package structure further includes a passivation layer below the integrated circuit chip and the molding compound. In addition, the package structure includes a redistribution layer in the passivation layer. The package structure also includes first bumps electrically connected to the integrated circuit chip through the redistribution layer. The first bumps are inside the chip edge and arranged along the chip edge. The package structure further includes second bumps electrically connected to the integrated circuit chip through the redistribution layer. The second bumps are outside the chip edge and arranged along the chip edge. The first bumps are next to the second bumps. The first and second bumps are spaced apart from the chip edge.
- In accordance with some embodiments, a package structure is provided. The package structure includes a package layer. The package structure also includes an integrated circuit chip having a chip edge in the package layer. The package structure further includes a passivation layer below the integrated circuit chip and the package layer. The passivation layer comprises a first region and a second region adjoining the first region. There is a boundary between the first and second regions. The boundary is substantially aligned to the chip edge. In addition, the package structure includes a redistribution layer in the passivation layer. The redistribution layer extends across the boundary. The package structure also includes first bumps electrically connected to the integrated circuit chip through the redistribution layer. The first bumps are in the first region. The package structure further includes second bumps electrically connected to the integrated circuit chip through the redistribution layer. The second bumps are in the second region. The first bumps and the second bumps are next to the boundary and arranged along the boundary without overlapping the boundary.
- In accordance with some embodiments, a package structure is provided. The package structure includes a first chip having a first chip edge in a package layer. The package structure also includes a second chip having a second chip edge in the package layer. The second chip edge is next to the first chip edge. There is an interval between the first and second chip edges. The package structure further includes a passivation layer below the first chip, the second chip and the package layer. In addition, the package structure includes redistribution lines in the passivation layer. The package structure also includes bumps electrically connected to the first chip and the second chip through the redistribution lines. The bumps include first bumps inside the first chip edge. The bumps also include second bumps inside the second chip edge. The bumps further include third bumps outside the first and second chip edges. There is a bump pitch between one of the first bumps and one of the third bumps that are next to each other. The third bumps are arranged outside a region between the first and second chip edges to partially surround the first and second chip edges if the interval is less than the bump pitch. One or more of the third bumps are arranged within the region if the interval is not less than the bump pitch.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
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US20200135651A1 (en) | 2020-04-30 |
TW201824470A (en) | 2018-07-01 |
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