TW201803053A - Fan-out muti-chip stacking assembly structure and manufacturing method - Google Patents
Fan-out muti-chip stacking assembly structure and manufacturing methodInfo
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- TW201803053A TW201803053A TW105122510A TW105122510A TW201803053A TW 201803053 A TW201803053 A TW 201803053A TW 105122510 A TW105122510 A TW 105122510A TW 105122510 A TW105122510 A TW 105122510A TW 201803053 A TW201803053 A TW 201803053A
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Abstract
Description
本發明係有關一種可堆疊式之封裝構造及其形成的方法,尤指具有球狀閘排(Ball Grid Array;BGA)封裝之電子裝置及其形成之方法。 The invention relates to a stackable packaging structure and a method for forming the same, and more particularly to an electronic device with a ball grid array (BGA) package and a method for forming the same.
由於消費性電子產品對於多功能及可攜式需求越來越多元化,必須改變電子封裝結構朝向小尺寸及多性能前進。然而,當整個封裝結構愈來愈小時,必須考慮元件尺寸、晶片尺寸、I/O接點數、大小及間距等因素,確認其空間是否足夠容納所有電路端點。一個單一積體電路晶片由於面積的限制,無法輕易地增加電路端點,但由於目前半導體技術進展,使得晶片尺寸變小,晶片功能強大,I/O接點增加,所對應的封裝基材也必須考慮對應之電路佈局的問題,目前常採 用多層印刷電路板基材,以克服多電路輸出端之問題。但是空間有限時,則必須思考如何增加電路輸出結構設計。 As consumer electronics products become more and more diversified in their multi-functional and portable needs, it is necessary to change the electronic packaging structure toward small size and multi-performance. However, as the overall package structure becomes smaller and smaller, factors such as component size, chip size, number of I / O contacts, size, and pitch must be considered to determine whether its space is sufficient to accommodate all circuit endpoints. A single integrated circuit chip cannot easily increase the number of circuit terminals due to the area limitation. However, due to the current advances in semiconductor technology, the size of the chip has become smaller, the chip has powerful functions, the number of I / O contacts has increased, and the corresponding packaging substrate has also The problem of corresponding circuit layout must be considered. Multilayer printed circuit board substrates are used to overcome the problems of multiple circuit output terminals. But when space is limited, you must think about how to increase the circuit output structure design.
為解決上述之困擾,本發明便是在基板(substrate)增加有限的面積下,提供一種可立體堆疊,雙面Fan-out多晶片封裝構造及其形成的方法,以增加積體電路封裝的電路輸出端數目達傳統封裝輸出端數目的一倍以上,詳言之,本發明係採用晶片上、下堆疊式封裝,再加以封裝層穿孔金屬電鍍或填充導體形成迴路,增加雙面的電路端點以滿足多I/O封裝需求,且不影響原來封裝尺寸面積大小。 In order to solve the above-mentioned problems, the present invention provides a three-dimensionally stackable, double-sided Fan-out multi-chip packaging structure and a method for forming the same under a limited increase in substrate area, so as to increase the circuit of an integrated circuit package The number of output terminals has more than doubled the number of output terminals of traditional packages. In detail, the present invention uses a chip top and bottom stacked package, and then adds a layer of perforated metal plating or a filled conductor to form a loop, and adds double-sided circuit endpoints. To meet the needs of multiple I / O packages, without affecting the original package size and area.
中華民國專利號407446中揭露一種多晶片堆疊封裝之電子裝置及其形成之方法,如圖一所示,其結構包含電路板10;下層晶片21藉著I/O接點23連接至基板10上,上層晶片22藉著引線50連接至基板10上,並以封裝層40覆蓋晶片及引線。堆疊的晶片之間24可以包含非導電性材質,具有貼合效果。此專利可利用不同種類晶片進行訊號連接且堆疊以增加其元件應用功能。 The Republic of China Patent No. 407446 discloses a multi-chip stacked package electronic device and a method for forming the same. As shown in FIG. 1, the structure includes a circuit board 10; the lower-layer chip 21 is connected to the substrate 10 through an I / O contact 23. The upper-layer chip 22 is connected to the substrate 10 through a lead 50, and the chip and the lead are covered with a packaging layer 40. The stacked wafers 24 may include a non-conductive material, which has a bonding effect. This patent can use different types of chips for signal connection and stacking to increase its component application functions.
中華民國專利號I441312中提出三維立體結構300,底層晶片301藉由連接層310與基板350接合固定,進而堆疊晶片302堆疊在底層晶片301之上,而堆疊晶片302中有通孔設計303,用於電訊連接之導通孔。該導通孔以絕緣層311包覆,且絕緣層311同時部分或完全包覆堆疊晶片302,達到保護晶片與絕緣電訊之效果。其絕緣層之表面製作有單數或複數個第一電訊接點321,該第一電訊接點321完全、部份或無覆蓋於絕緣層310之表面,且完全或部分包覆於填孔導電材料320;此第一電訊接點321可直接製作於填孔導電材料320上, 或經佈線處理後製作於絕緣層310之表面;於另一表面上製作有單數或複數個第二電訊接點322,該第二電訊接點322完全、部份或無覆蓋於絕緣層310之表面,且完全或部分包覆於填孔導電材料320。於底層機板上則製作有單數或複數個第三電訊接點323,該第三電訊接點323部份或完全包覆於底層晶片301上表面。此具有絕緣層311、通孔303與312、填孔導電材料320、第一電訊接點321、第二電訊接點322之堆疊晶片302結構以電訊接點接著層325,由第二電訊接點322與製作於底層晶片301上之第三電訊接點323進行電訊連接,此電訊接點接著層325可為任一導電材料。而該堆疊晶片302之第一電訊接點321則利用單數或複數個打線導線330搭配打線技術與第四電訊接點324連接,達到與基板350之電訊連接。 The Republic of China Patent No. I441312 proposes a three-dimensional three-dimensional structure 300. The bottom wafer 301 is fixed to the substrate 350 by a connection layer 310, and then the stacked wafer 302 is stacked on the bottom wafer 301. The stacked wafer 302 has a through-hole design 303. Vias for telecommunication connections. The via is covered with an insulating layer 311, and the insulating layer 311 partially or completely covers the stacked chip 302 at the same time, thereby achieving the effect of protecting the chip and the insulated telecommunications. A single or a plurality of first telecommunication contacts 321 are made on the surface of the insulating layer, and the first telecommunication contacts 321 are completely, partially or uncovered on the surface of the insulating layer 310, and are completely or partially covered with the hole-filling conductive material. 320; this first telecommunication contact 321 can be directly fabricated on the hole-filling conductive material 320, Or made on the surface of the insulating layer 310 after wiring treatment; a single or plural second telecommunication contacts 322 are made on the other surface, and the second telecommunication contacts 322 are completely, partially or uncovered on the insulating layer 310 The surface is completely or partially covered with the hole-filling conductive material 320. A single or multiple third telecommunication contacts 323 are made on the bottom board, and the third telecommunication contacts 323 are partially or completely covered on the upper surface of the bottom chip 301. The stacked chip 302 having an insulating layer 311, through holes 303 and 312, a hole-filling conductive material 320, a first telecommunication contact 321, and a second telecommunication contact 322 is structured with a telecommunication contact layer 325 and a second telecommunication contact 322 performs a telecommunications connection with a third telecommunication contact 323 fabricated on the underlying wafer 301, and this telecommunication contact adjoining layer 325 may be any conductive material. The first telecommunication contact 321 of the stacked chip 302 is connected to the fourth telecommunication contact 324 by using a single or plural wire bonding wires 330 and wire bonding technology to achieve a telecommunication connection with the substrate 350.
本發明之主要目的即在提出一種扇出型單或多晶片堆疊封裝之裝置及其形成之方式。使用上下堆疊的晶片,安裝於基板上,下層晶片藉著I/O接點連接至基板上,上層或下層晶片藉著引線(wire bond)連接至基板上,樹脂封裝完後開孔填充導體,將電子連接訊號向上傳遞至元件表面,使其形成雙面可將電子訊號輸出的封裝元件,以解決多層I/O封裝需求裝置。且藉由多種結構延伸,可探討出不同應用的扇形多晶片堆疊結構,以符合現行行動裝置所要求多功能、大容量的需求。 The main object of the present invention is to propose a fan-out type single or multi-chip stacked package device and a method for forming the same. Use stacked wafers to mount on the substrate. The lower wafers are connected to the substrate through I / O contacts. The upper or lower wafers are connected to the substrate through wire bonds. After the resin is sealed, the holes are filled with conductors. The electronic connection signal is transmitted upward to the surface of the component, so that it forms a double-sided package component capable of outputting the electronic signal, so as to solve the multi-layer I / O packaging demand device. And by extending a variety of structures, a fan-shaped multi-chip stacking structure for different applications can be explored to meet the multifunctional and large-capacity requirements required by current mobile devices.
為了對本發明之目的、技術內容、特徵及其所達成之功效有更進一步之瞭解與 認識,謹佐以較佳之實施例圖式及配合詳細之說明,說明如后: In order to further understand the purpose, technical content, characteristics of the present invention and the effects achieved by it, Acknowledgement, I would like to accompany the description of the preferred embodiment with a detailed description, as follows:
本發明揭露一種電子封裝結構,為一扇形堆疊晶片結構。藉由第一晶片由金屬I/O接點連接,第二晶片使用打線連接,進而搭配樹脂導通孔至樹脂表面再借由金屬植球進行訊號導通。 The invention discloses an electronic packaging structure, which is a fan-shaped stacked wafer structure. The first chip is connected by metal I / O contacts, the second chip is connected by wire bonding, and then the resin vias are matched to the resin surface, and then the signal conduction is performed by a metal planting ball.
圖三為本發明案例一之扇出型堆疊式晶片120封裝結構之截面圖,此封裝結構先使用基板110當作載具,第一晶片121由I/O接點123連接至基板I/O端111,第二晶片122使用打線150連接訊號。但第一晶片121與第二晶片122的接合可使用導電或非導電材質的晶片連接層124,之後藉由覆蓋層140完成覆蓋。之後藉由導體填充通孔112將基板110的電子訊號網上傳遞至樹脂表面電子端113,之後再進行I/O接點130的製作完成此封裝結構體。 FIG. 3 is a cross-sectional view of the fan-out stacked chip 120 package structure of the first case of the present invention. This package structure first uses the substrate 110 as a carrier, and the first chip 121 is connected to the substrate I / O by the I / O contact 123. The terminal 111 and the second chip 122 use a wire 150 to connect signals. However, the first wafer 121 and the second wafer 122 may be bonded using a wafer connection layer 124 made of a conductive or non-conductive material, and then covered by a cover layer 140. Then, the electronic signal of the substrate 110 is transmitted to the resin surface electronic terminal 113 through the conductor-filled through-hole 112, and then the I / O contact 130 is manufactured to complete the package structure.
前述第一晶片121與第二晶片122可為主動或被動電子元件、感測元件、測試元件、微機電晶片或其上電子元件之組合。而通孔112所填充之導電材料可為導電金屬,如錫、鋁、銅、銀、鎢、鉛或以上金屬材料合金或其他具導電性質之材料,亦可應用於基板電路端111及樹脂表面電子端113。 The first wafer 121 and the second wafer 122 may be active or passive electronic components, sensing components, test components, micro-electro-mechanical wafers or a combination of electronic components thereon. The conductive material filled in the through-hole 112 can be a conductive metal, such as tin, aluminum, copper, silver, tungsten, lead or the above metal material alloy or other conductive material, and can also be applied to the substrate circuit end 111 and the resin surface. Electronic terminal 113.
圖四為本發明之延伸結構設計,此扇出型晶片堆疊封裝結構200使用基板210為載具,第一晶片221使用連接層223連接固定於基板上,再使用金線250引線方式連接於基板電子端211,而第一晶片電路墊214藉由佈線設計線路215進行電路端213的生成以便於跟第二晶片I/O端216連接,藉由錫球迴焊或凸塊224製程可將訊號連接。之後藉由覆蓋層240完成覆蓋,再由導電通孔212 將基板210的電子訊號網上傳遞至樹脂表面電子端217,之後再進行I/O接點260完成此封裝結構體。 Figure 4 shows the design of the extended structure of the present invention. The fan-out chip stacking package structure 200 uses the substrate 210 as a carrier. The first wafer 221 is connected and fixed on the substrate by the connection layer 223, and then connected to the substrate by the 250 wire method. The electronic terminal 211, and the first chip circuit pad 214 generates the circuit terminal 213 through the wiring design circuit 215 so as to be connected to the second chip I / O terminal 216. The signal can be processed by solder ball reflow or bump 224 process. connection. Covering is then completed by the cover layer 240, and then by the conductive vias 212 The electronic signal of the substrate 210 is transmitted to the resin surface electronic terminal 217 on the network, and then the I / O contact 260 is performed to complete the package structure.
圖五是本發明之延伸結構設計,此多晶片扇型結構400使用基板410為載具,第一晶片421由I/O接點423連接至基板電路端412,第二晶片422使用打線450連接訊號。但第一晶片421與第二晶片422的接合可使用導電或非導電膠的晶片連接層425,之後藉由覆蓋層440完成覆蓋。再藉由導通孔413將基板的電子端411訊號往上傳遞至樹脂表面電子端414,亦可進行佈線設計416形成樹脂表面電子端417,結構的兩邊皆可進行導通孔413設計,再來進行第三晶片426及第四晶片427之I/O接點429連接之後再進行覆蓋層428保護,最後進行金屬植球460完成此封裝結構體。 Figure 5 shows the design of the extended structure of the present invention. The multi-chip sector structure 400 uses the substrate 410 as a carrier. The first chip 421 is connected to the circuit end 412 of the substrate by an I / O contact 423, and the second chip 422 is connected using a wire 450. Signal. However, the first wafer 421 and the second wafer 422 can be bonded by using a wafer connection layer 425 of conductive or non-conductive adhesive, and then covered by a cover layer 440. Then via the via 413, the electronic terminal 411 signal of the substrate is transmitted upward to the resin surface electronic terminal 414, and the wiring design 416 can also be formed to form the resin surface electronic terminal 417. The via 413 can be designed on both sides of the structure, and then proceed. After the I / O contacts 429 of the third chip 426 and the fourth chip 427 are connected, the cover layer 428 is protected, and finally the metal ball 460 is used to complete the package structure.
圖六是本發明之延伸結構設計,此多晶片扇型封裝結構500使用基板510為載具,第一晶片521由金屬凸塊523連接至基板金屬墊512,第二晶片522使用打線550連接訊號。但第一晶片521與第二晶片522的接合可使用導電或非導電膠的晶片連接層525,之後藉由覆蓋層540完成覆蓋。再藉由導通孔513將基板金屬墊511訊號往上傳遞至樹脂表面金屬通孔上的電子墊514,亦可進行樹脂表面的佈線設計531形成樹脂表面電子端,結構的兩邊皆可進行導通孔513設計,再來進行第三晶片526及第四晶片527使用連接層528至基板上再進行金線529打線封裝製程,再以覆蓋層540保護,進行第一次I/O接點530製作,再進行第二次I/O接點560製作以完成此封裝結構體。 FIG. 6 is an extended structure design of the present invention. The multi-chip fan-shaped package structure 500 uses a substrate 510 as a carrier. The first chip 521 is connected to the substrate metal pad 512 by a metal bump 523 and the second chip 522 is connected to a signal using a wire 550 . However, the first wafer 521 and the second wafer 522 can be joined by using a conductive or non-conductive adhesive wafer connection layer 525, and then covered by a cover layer 540. Then, the signal from the substrate metal pad 511 is transmitted upward to the electronic pad 514 on the resin surface metal via hole 513 through the via 513, and the wiring design 531 on the resin surface can also be used to form the electronic surface of the resin surface. Both sides of the structure can be used for via holes 513 design, and then carry out the third wafer 526 and the fourth wafer 527 using the connection layer 528 to the substrate, and then perform a gold wire 529 wire packaging process, and then protected by the cover layer 540 to perform the first I / O contact 530 production. A second I / O contact 560 is made to complete the package structure.
10‧‧‧載具(基板) 10‧‧‧ carrier (substrate)
11‧‧‧電路端 11‧‧‧Circuit side
12‧‧‧鍍通孔 12‧‧‧ plated through hole
20‧‧‧堆疊式晶片 20‧‧‧ stacked chip
21‧‧‧第一晶片 21‧‧‧The first chip
22‧‧‧第二晶片 22‧‧‧Second Chip
23‧‧‧金屬連接(凸塊) 23‧‧‧ metal connection (bump)
24‧‧‧晶片連接層 24‧‧‧chip connection layer
25‧‧‧非導電覆蓋層 25‧‧‧ Non-conductive cover
30‧‧‧錫球 30‧‧‧ solder ball
40‧‧‧填充物 40‧‧‧ filler
50‧‧‧引線 50‧‧‧ Lead
100‧‧‧扇出型結構設計 100‧‧‧fan-out structure design
110‧‧‧載具(基板) 110‧‧‧ carrier (substrate)
111‧‧‧I/O端 111‧‧‧I / O terminal
112‧‧‧導通孔 112‧‧‧via
113‧‧‧樹脂表面電子端 113‧‧‧Resin surface electronic terminal
120‧‧‧堆疊式晶片 120‧‧‧ stacked chip
121‧‧‧第一晶片 121‧‧‧The first chip
122‧‧‧第二晶片 122‧‧‧Second Chip
123‧‧‧I/O接點 123‧‧‧I / O contact
124‧‧‧晶片連接層 124‧‧‧chip connection layer
125‧‧‧覆蓋層 125‧‧‧ Overlay
130‧‧‧錫球或凸塊 130‧‧‧ solder ball or bump
140‧‧‧填充物 140‧‧‧ filler
150‧‧‧引線 150‧‧‧ Lead
200‧‧‧扇出型晶片堆疊封裝結構 200‧‧‧Fan-out chip stack package structure
210‧‧‧基板 210‧‧‧ substrate
211‧‧‧I/O接點 211‧‧‧I / O contact
212‧‧‧導通孔 212‧‧‧via
213‧‧‧I/O接點 213‧‧‧I / O contact
214‧‧‧第一晶片電路墊 214‧‧‧First chip circuit pad
215‧‧‧佈線設計線路 215‧‧‧Wiring Design Circuit
216‧‧‧第二晶片電子墊 216‧‧‧Second chip electronic pad
217‧‧‧樹脂表面電子端 217‧‧‧Resin surface electronic terminal
221‧‧‧第一晶片 221‧‧‧First Chip
222‧‧‧第二晶片 222‧‧‧Second Chip
223‧‧‧導電或非導電連接層 223‧‧‧ conductive or non-conductive connecting layer
224‧‧‧I/O接點 224‧‧‧I / O contact
230‧‧‧I/O接點 230‧‧‧I / O contact
240‧‧‧覆蓋層 240‧‧‧ Overlay
250‧‧‧金線引線 250‧‧‧Gold wire lead
260‧‧‧I/O接點 260‧‧‧I / O contact
300‧‧‧三維立體晶片堆疊封裝結構 300‧‧‧Three-dimensional three-dimensional chip stack package structure
301‧‧‧底層晶片 301‧‧‧ underlying chip
302‧‧‧堆疊晶片 302‧‧‧stacked chip
303‧‧‧通孔 303‧‧‧through hole
310‧‧‧接著層 310‧‧‧ Adjacent Layer
311‧‧‧絕緣層 311‧‧‧insulation layer
312‧‧‧通孔 312‧‧‧through hole
320‧‧‧填孔導電材料 320‧‧‧ hole-filling conductive material
321‧‧‧第一電訊接點 321‧‧‧First Telecom Contact
322‧‧‧第二電訊接點 322‧‧‧Second telecommunication contact
323‧‧‧第三電訊接點 323‧‧‧Telecommunications contact
324‧‧‧第四電訊接點 324‧‧‧Fourth telecommunication contact
325‧‧‧電訊接點接著層 325‧‧‧Telecom contact layer
330‧‧‧打線導線 330‧‧‧ wire
340‧‧‧封膠樹酯 340‧‧‧sealing resin
350‧‧‧基板 350‧‧‧ substrate
400‧‧‧多晶片扇出型結構 400‧‧‧Multi-chip fan-out structure
410‧‧‧電子基板 410‧‧‧Electronic substrate
411‧‧‧基板金屬墊 411‧‧‧Substrate metal pad
412‧‧‧基板金屬墊 412‧‧‧ substrate metal pad
413‧‧‧導通孔 413‧‧‧via
414‧‧‧導通孔上的電子墊 414‧‧‧Electronic pad on via
415‧‧‧晶片上的電子墊 415‧‧‧ electronic pad on chip
416‧‧‧覆蓋層表面的佈線設計 416‧‧‧ wiring design on the surface of the overlay
421‧‧‧第一晶片 421‧‧‧First Chip
422‧‧‧第二晶片 422‧‧‧Second Chip
423‧‧‧I/O接點 423‧‧‧I / O contact
424‧‧‧覆蓋層 424‧‧‧ Overlay
425‧‧‧晶片連接層 425‧‧‧chip connection layer
426‧‧‧第三晶片 426‧‧‧Third chip
427‧‧‧第四晶片 427‧‧‧Fourth chip
428‧‧‧線路保護層 428‧‧‧line protection layer
429‧‧‧I/O接點 429‧‧‧I / O contact
440‧‧‧覆蓋層 440‧‧‧ Overlay
450‧‧‧金線 450‧‧‧Gold Wire
460‧‧‧I/O接點 460‧‧‧I / O contact
500‧‧‧多晶片扇出型封裝結構 500‧‧‧multi-chip fan-out package structure
510‧‧‧基板 510‧‧‧ substrate
511‧‧‧基板金屬墊 511‧‧‧ substrate metal pad
512‧‧‧基板金屬墊 512‧‧‧ substrate metal pad
513‧‧‧導通孔 513‧‧‧via
514‧‧‧導通孔上的電子墊 514‧‧‧ electronic pads on vias
521‧‧‧第一晶片 521‧‧‧First Chip
522‧‧‧第二晶片 522‧‧‧Second Chip
523‧‧‧I/O接點 523‧‧‧I / O contact
524‧‧‧接合保護層 524‧‧‧Joint protective layer
525‧‧‧晶片連接層 525‧‧‧chip connection layer
526‧‧‧第三晶片 526‧‧‧Third chip
527‧‧‧第四晶片 527‧‧‧Fourth chip
528‧‧‧晶片連接層 528‧‧‧chip connection layer
529‧‧‧金線 529‧‧‧Gold Wire
530‧‧‧基板電子墊 530‧‧‧Substrate electronic pad
531‧‧‧樹脂表面的佈線設計 531‧‧‧ resin surface wiring design
540‧‧‧覆蓋層 540‧‧‧ Overlay
550‧‧‧金線 550‧‧‧Gold Wire
560‧‧‧I/O接點 560‧‧‧I / O contact
圖一為習知利用打線技術之三維立體堆疊結構示意圖。 FIG. 1 is a schematic diagram of a three-dimensional three-dimensional stacking structure using conventional wire bonding technology.
圖二為習知所示扇形封裝結構體之示意圖。 FIG. 2 is a schematic diagram of a conventional fan-shaped package structure.
圖三為本發明之扇形堆疊晶片結構之截面圖 FIG. 3 is a cross-sectional view of a fan-shaped stacked wafer structure of the present invention
圖四為扇形堆疊晶片結構之延伸設計截面圖 Figure 4 is a cross-sectional view of the extended design of a fan-shaped stacked wafer structure
圖五為本發明之延伸設計:多晶片扇型結構截面圖 Figure 5 is an extended design of the present invention: a cross-sectional view of a multi-wafer fan structure
圖六為本發明之延伸設計:多晶片扇型封裝結構截面圖 Figure 6 is an extended design of the present invention: a cross-sectional view of a multi-chip fan-shaped package
100‧‧‧扇出型結構設計 100‧‧‧fan-out structure design
110‧‧‧載具(基板) 110‧‧‧ carrier (substrate)
111‧‧‧電路端(I/O墊片) 111‧‧‧Circuit (I / O pad)
112‧‧‧導通孔 112‧‧‧via
120‧‧‧堆疊式晶片 120‧‧‧ stacked chip
121‧‧‧第一晶片 121‧‧‧The first chip
122‧‧‧第二晶片 122‧‧‧Second Chip
123‧‧‧金屬連接(凸塊),I/O接點 123‧‧‧metal connection (bump), I / O contact
124‧‧‧晶片連接層 124‧‧‧chip connection layer
125‧‧‧非導電覆蓋層 125‧‧‧ non-conductive cover
130‧‧‧錫球或I/O接點 130‧‧‧ solder ball or I / O contact
140‧‧‧填充物 140‧‧‧ filler
150‧‧‧引線 150‧‧‧ Lead
Claims (10)
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TW105122510A TWI636537B (en) | 2016-07-14 | 2016-07-14 | Electronic device of fan-out type multi-wafer stack package and method of forming the same |
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TWI791698B (en) * | 2018-08-31 | 2023-02-11 | 南韓商愛思開海力士有限公司 | Stack packages including bridge dies |
TWI822327B (en) * | 2021-11-04 | 2023-11-11 | 達發科技股份有限公司 | Semiconductor package |
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TWI734455B (en) | 2019-10-09 | 2021-07-21 | 財團法人工業技術研究院 | Multi-chip package and manufacture method thereof |
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TWI268581B (en) * | 2002-01-25 | 2006-12-11 | Advanced Semiconductor Eng | Stack type flip-chip package including a substrate board, a first chip, a second chip, multiple conductive wire, an underfill, and a packaging material |
JP5074738B2 (en) * | 2006-10-24 | 2012-11-14 | リンテック株式会社 | Spacer sheet for composite semiconductor device and method for manufacturing composite semiconductor device |
US20100072600A1 (en) * | 2008-09-22 | 2010-03-25 | Texas Instrument Incorporated | Fine-pitch oblong solder connections for stacking multi-chip packages |
TWI441312B (en) * | 2010-05-31 | 2014-06-11 | Nat Univ Tsing Hua | A three dimensional chip stacking electronic package with bonding wires |
US8343810B2 (en) * | 2010-08-16 | 2013-01-01 | Stats Chippac, Ltd. | Semiconductor device and method of forming Fo-WLCSP having conductive layers and conductive vias separated by polymer layers |
US8304880B2 (en) * | 2010-09-14 | 2012-11-06 | Stats Chippac Ltd. | Integrated circuit packaging system with package-on-package and method of manufacture thereof |
US9667360B2 (en) * | 2012-03-31 | 2017-05-30 | Intel Corporation | Proximate communication with a target device |
CN104505351A (en) * | 2014-12-30 | 2015-04-08 | 中国科学院微电子研究所 | Preparation method of lateral-interconnection package on package structure |
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TWI791698B (en) * | 2018-08-31 | 2023-02-11 | 南韓商愛思開海力士有限公司 | Stack packages including bridge dies |
TWI822327B (en) * | 2021-11-04 | 2023-11-11 | 達發科技股份有限公司 | Semiconductor package |
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