TW201743409A - Manufacturing method of semiconductor chip module - Google Patents

Abstract

The present invention relates to a method for producing semiconductor chip modules, more specifically to a method for producing semiconductor chip modules in which semiconductor chip modules are produced by cutting, along the semiconductor chip boundaries, a PCB substrate comprising a PCB layer having a plurality of semiconductor chips mounted thereon. Disclosed is a method for producing semiconductor chip modules, the method comprising: a step for preparing a PCB substrate (1) comprising a PCB layer (20) which is provided with a plurality of semiconductor chips (24), for executing previously configured functions, mounted thereon and which is divided with respect to the semiconductor chips (24), and a glass layer (10) attached on one surface of the PCB layer (20); and a division step for dividing the PCB substrate (1) into a previously configured shape with respect to the semiconductor chips (24) by sequentially cutting the PCB layer (20) and glass layer (10) by means of a laser beam.

Description

Semiconductor chip module manufacturing method

The present invention relates to a method of fabricating a semiconductor wafer module, and more particularly to a method of manufacturing a semiconductor wafer module by cutting a PCB substrate including a PCB layer on which a plurality of semiconductor wafers are bonded by a boundary of a semiconductor wafer. A method of manufacturing a semiconductor wafer module.

Semiconductor packaging means that a semiconductor die (die) fabricated by forming an integrated circuit on a wafer is attached to a substrate such as a printed circuit board (PCB).

As such, semiconductor packaging technology is also applied to image sensors. The image sensor can be roughly classified into a charge coupled device image sensor (CCD) and a metal oxide semiconductor device image sensor (CMOS Image Sensor).

The image sensor package is configured to cover the upper portion at a fixed distance from the transparent substrate of the glass substrate after the image sensor semiconductor die is bonded to the bonded substrate or package. That is, the image sensor package is configured to protect the image sensor while causing the light to be incident on the light receiving surface or the active surface to form a package.

As described above, the package structure of the image sensor is applied to the inside of the substrate or the package formed of the package material, and is attached to the image sensor wafer die. The encapsulating material is one of the components of the image sensor package housing, and in addition, a transparent substrate such as a glass substrate that allows light to enter is required.

Semiconductors and other electronic components are typically fabricated by creating a plurality of replicas of the component together on the substrate and cutting the singulation.

Cutting is to create a cut or break between components. The plurality of components fabricated on the substrate are separated from each other to form a separate component, and the cutting can be performed by laser processing.

In general, a glass substrate is more brittle than a substrate bonded to a semiconductor chip to which an image sensor is attached, and when a glass substrate is treated with a laser, there is a tendency for cracks and chips to occur along a kerf.

Therefore, the conventional image sensor package structure is manufactured by cutting a substrate before covering the glass substrate on the substrate to which the image sensor semiconductor die is attached, and then covering the substrate with the glass substrate. The package structure of the image sensor is formed, or the package structure of the image sensor is formed by inverting the substrate covered by the glass substrate while processing with lasers of different wavelengths.

That is, with the conventional method, since the process of manufacturing the image sensor package is divided into a plurality of steps, the process time is elongated, and there is a problem that the manufacturing cost increases.

An object of the present invention is to provide a method for manufacturing a semiconductor wafer module by sequentially cutting a PCB layer bonded to a plurality of semiconductor wafers and a glass layer attached to one side of the PCB layer by using a laser beam in order to solve the above problems. Cracks and chipping that may occur due to cutting are minimized.

In order to achieve the above object, the present invention discloses a method for fabricating a semiconductor wafer module, comprising: a PCB substrate (1) preparation step of preparing the PCB substrate (1), the PCB substrate (1) comprising a PCB layer (20) And a glass layer (10) to which a plurality of semiconductor wafers (24) performing a predetermined function are attached, and the PCB layer (20) is divided based on the semiconductor wafer (24), the glass layer (10) attaching to one side of the PCB layer 20; and dividing the step of sequentially cutting the PCB layer (20) and the glass layer (10) by a laser beam, and dividing the semiconductor wafer (24) according to a predetermined shape The step of dividing the PCB substrate (1).

The PCB layer (20) may be thicker than the glass layer (10).

The dividing step can include: a first cutting step of cutting the PCB layer (20); and a second cutting step of cutting the glass layer (10).

In an embodiment, the first cutting step can be cut to a height that is higher than the bottom surface of the PCB layer (20).

At this time, the second cutting step may cut together the portion of the PCB layer (20) that has not been cut and the glass layer 10.

In another embodiment, the first cutting step can be performed after the second cutting step.

The second cutting step can utilize a laser beam having a lower power than the laser beam used in cutting the PCB layer (20) to cut the glass layer (10).

The dividing step can sequentially cut the PCB layer (20) and the glass layer (10) using parallel laser beams having a predetermined beam width.

The second cutting step can cut the glass layer (10) with a parallel laser beam having a beam width that is smaller than the beamwidth of the laser beam used in cutting the PCB layer (20).

The second cutting step can move the laser beam along the path of the spiral shape to cut the glass layer (10).

The laser beam can be a short wavelength UV laser beam.

The semiconductor wafer module (2) may be a fingerprint recognition sensor.

The method for fabricating a semiconductor wafer module according to the present invention has the advantage that it sequentially cuts a PCB layer bonded to a plurality of semiconductor wafers and a glass layer attached to one side of the PCB layer by using a laser beam, which may be generated by cutting. Cracks and chipping are minimized.

Specifically, the PCB layer is cut to a higher height than the bottom surface of the PCB layer, and then the uncut portion of the PCB layer is cut together with the glass layer, thereby preventing the PCB layer from being caused by the temperature of the laser beam being transmitted through the laser beam. The glass layer is damaged by overheating.

Moreover, the semiconductor wafer module manufacturing method according to the present invention has the following advantages: only changing the power of the short-wavelength laser beam, and cutting the PCB layer and the glass layer attached to one side of the PCB layer, thereby enabling the semiconductor wafer module. The process is simplified and the process time is shortened, thereby reducing manufacturing costs.

1‧‧‧PCB substrate

2‧‧‧Semiconductor chip module

10‧‧‧ glass layer

20‧‧‧PCB layer

22‧‧‧Substrate

24‧‧‧Semiconductor wafer

26‧‧‧Epoxy mold compound (EMC)

30‧‧‧Cutting trough

D ₁ ‧‧‧beamwidth

C‧‧‧ cutting line

D ₂ ‧‧‧beamwidth

d ₁ ‧‧‧beamwidth

d ₂ ‧‧‧beamwidth

K ₁ ~K ₃ ‧‧‧thickness

L ₁ ‧‧‧ Path

L ₂ ‧‧‧ Path

1 is a perspective view showing a semiconductor wafer module manufactured by a method of fabricating a semiconductor wafer module according to the present invention; FIG. 2 is a cross-sectional view showing an embodiment of a method of fabricating a semiconductor wafer module according to the present invention; Is a cross-sectional view taken in the direction of I-I' of FIG. 1 of the PCB substrate before being cut by the laser beam; FIG. 2b is a view showing the direction of I-I' of FIG. 1 in which the laser beam is first cut by the laser beam. FIG. 2c is a cross-sectional view taken along the line I-I' of FIG. 1 of the PCB substrate cut by the laser beam for the second time; and FIG. 3 is an enlarged view showing the expansion of D ₁ of FIG. A plan view of a portion of the PCB substrate through which the beam is cut.

Hereinafter, a method of manufacturing a semiconductor wafer module according to the present invention will be described below with reference to the drawings.

The PCB substrate 1 used in the method of manufacturing a semiconductor wafer module according to the present invention may include: a PCB layer 20 to which a plurality of semiconductor wafers 24 performing a predetermined function are attached, and which are divided based on the semiconductor wafer 24; A glass layer 10 attached to one side of the PCB layer 20.

The semiconductor wafer may be an element that performs a predetermined function.

For example, the semiconductor wafer 24 is an image sensor wafer that captures a photographed object by using a photoelectric conversion element and a charge coupled device and outputs an electrical signal, and may be a CCD (charge couple device) or a metal oxide semiconductor device image. Sensor chip (CIS; CMOS Image Sensor), but is not limited thereto.

If the semiconductor wafer 24 is an image sensor wafer, the semiconductor wafer module 2 formed by the semiconductor wafer 24 may belong to a fingerprint recognition sensor.

As shown in FIG. 1, the PCB substrate 1 may include: a plurality of semiconductor wafers 24 that perform a predetermined function, and a PCB layer 20 divided by the semiconductor wafer 24; and a glass attached to one side of the PCB layer 20. Layer 10.

The PCB substrate 1 is formed by laminating a plurality of semiconductor wafers 24 on a substrate 22 (substrate). At this time, the PCB substrate 1 is bonded to a plurality of semiconductor wafers 24 having a predetermined interval or a predetermined pattern in order to form a plurality of semiconductor wafer modules 2 after dicing.

Therefore, the PCB substrate 1 is divided into semiconductor wafers 24 that are bonded at predetermined intervals by a laser beam in a predetermined shape, so that the individually operated semiconductor wafer modules 2 can be formed.

As an example, as shown in FIG. 1, the periphery of the edge of the semiconductor wafer 24 can be divided. The cut circular cutting line (C) divides the PCB substrate 1, but is not limited thereto. The cutting line (C) can have various shapes such as a circular shape and a polygonal shape depending on the use of the semiconductor wafer module 2.

The PCB layer 20 constituting the PCB substrate 1 may include a plurality of semiconductor wafers 24, a substrate 22 to which the plurality of semiconductor wafers 24 are bonded, and an EMC 26 formed on the bonding surface of the semiconductor wafer 24.

PCB layer 20 can be formed into a variety of thicknesses depending on the function and performance of semiconductor wafer 24. The glass layer 10 can be attached to one side of the PCB layer 20, particularly the surface to which the semiconductor layer 24 is bonded. At this time, before the glass layer 10 is attached to the PCB layer 20, the surface to which the semiconductor wafer 24 is bonded may be injection molded by EMC 26 (epoxy mold compound).

The glass layer 10 protects the semiconductor wafer 24 attached to the substrate 22 of the PCB layer 20, and if the semiconductor wafer 24 is an image sensor wafer, light can be incident on the light receiving surface of the image sensor wafer.

The glass layer 10 can be formed into a variety of thicknesses depending on the function and performance of the semiconductor wafer 24. However, the glass layer 10 functions as a protective layer of the semiconductor wafer module 2, so that the thickness of the glass layer 10 is preferably smaller than that of the PCB layer 20.

As an example, when the thickness of the PCB layer 20 is K1, the thickness K2 of the glass layer 10 may be smaller than 1/7 of K1 or in the same range.

When the PCB substrate 1 on which the coated glass layer 10 is completed on the PCB layer 20 is cut with a laser beam, the glass layer 10 coated on one side of the PCB layer 20 is very thin, and thus relatively brittle compared to the PCB layer 20. Therefore, there is a problem that the hot glass layer 20 formed by the laser beam is broken, and cracks and chips are generated after the cutting.

Hereinafter, a method of manufacturing a semiconductor wafer module according to the present invention for solving the above problems will be described with reference to FIGS. 2a to 3.

2 is a cross-sectional view showing an embodiment of a method of fabricating a semiconductor wafer module in accordance with the present invention; and FIG. 2a is a cross-sectional view taken along line II' of FIG. 1 of the PCB substrate before being cut by a laser beam; 2b is a cross-sectional view taken along the line I-I' of FIG. 1 in which the laser beam is first cut by the laser beam; and FIG. 2c is a view showing the PCB substrate cut by the laser beam for the second time in FIG. A section view in the -I' direction.

First, in FIG. 2a, the PCB substrate 1 is divided by a dicing line (C) located at the boundary of the edge of the semiconductor wafer 24, and a single semiconductor wafer module 2 can be formed.

In an embodiment, the upper portion of the PCB substrate 1 is provided with a glass layer 10, first through a laser. The beam cuts the glass layer 10, after which the PCB layer 20 at the lower portion can be cut.

In another embodiment, the PCB layer 20 is disposed on the upper portion of the PCB substrate 1, and the PCB layer 20 is first cut by a laser beam, after which the glass layer 10 located at the lower portion can be cut.

2b and 2c are views showing a method of manufacturing the semiconductor wafer module when the PCB layer 20 is disposed on the upper portion of the PCB substrate 1.

In Fig. 2b, a laser beam having a predetermined condition is irradiated onto the upper surface of the PCB layer 20, and the PCB layer 20 can be cut for the first time.

Here, the predetermined condition of the laser beam refers to, for example, the wavelength of the laser beam, the magnitude of the power, and the beam width.

An ultraviolet (ultraviolet) laser beam having a d ₁ beam width and moving along the cutting line (C) is irradiated onto the PCB layer 20 to perform the first cutting of the PCB layer 20.

In the range where the PCB layer 20 and the glass layer 10 are not damaged, the PCB layer 20 may have laser beam cuts of various wavelengths, but when the PCB layer 20 is cut by the UV laser beam, there is no need to change the illumination of the cut PCB layer 20. The wavelength of the laser beam between the first cutting stage and the second cutting step of the cut glass layer 10 has the advantage of reducing process time and expense.

Further, as shown in Figure 2b to FIG. 3, the laser beam having a beam width D ₁ above and to the cutting edge line 24 of a semiconductor wafer (C) of the movement path ₍₁ L) is irradiated on the PCB layer 20, in PCB layer above the irradiated laser beam 20 may be formed along the cutting line C and having cutting grooves d 30 (kerf) width _1.

At this time, it is preferable that the PCB layer 20 is entirely cut, but cut to a height higher than the bottom surface of the PCB layer 20.

That is, if the PCB layer 20 is completely cut by the laser beam, the thin glass layer 10 attached to the bottom surface of the PCB layer 20 may be damaged by the heat generated by the laser beam on the PCB layer 20. Therefore, it is preferable to leave a part of the boundary portion of the PCB layer 20 and the glass layer 10.

That is, if the thickness of the PCB layer 20 is K1, the cutting groove 30 having a depth of K3 (K3>K1) can be formed by the laser beam.

The thickness (K1-K3) of the remaining uncut PCB layer 20 is preferably at least greater than the thickness K2 of the glass layer 10 to prevent the glass layer 10 from being damaged by the heat of the PCB layer 20.

Also, in order to uniformly form the cutting width and the cutting depth of the cutting groove 30, the PCB layer 20 may be cut by a parallel laser beam passing through a telecentric lens, but is not limited thereto.

Thereafter, as shown in FIG. 2c, if the first cutting step is completed for the PCB layer 20 by the laser beam, a second cutting step of the laser beam can be performed on the glass layer 10.

As shown in Fig. 2c, a laser beam having a predetermined condition is irradiated onto the bottom surface of the cutting groove 30 formed in the PCB layer 20, so that the glass layer 10 can be cut a second time.

That is, the glass layer 10 is cut together with a portion of the PCB layer 20 that is not completely cut in the first cutting step.

For the PCB layer 20 and the glass layer 10 which are not completely cut, the laser beam is irradiated onto the cutting groove 30 formed on the PCB layer 20, so that it is not necessary to flip the PCB substrate for the second cutting of the glass layer 20. 1, in turn, can save process time and cost, while irradiating the laser beam along the cutting groove 30 formed on the PCB layer 20 and keeping the laser beam unchanged, so that the glass layer 10 can be cut a second time more accurately. advantage. In addition, an ultraviolet (ultra violet) laser beam having a d2 beam width and moving along the cutting line (C) is irradiated, thereby cutting the remaining PCB layer 20 and the glass layer 10 which are not completely cut.

At this time, it is preferable to use the same wavelength of the UV laser beam as the laser beam used for the first cutting of the PCB layer 20 when cutting the PCB layer 20 and the glass layer 10 which are not completely cut. .

When the PCB layer 20 and the glass layer 10 which are not completely cut are cut, the laser beams of various wavelengths can be cut in the range where the PCB layer 20 and the glass layer 10 are not damaged, but by using and The PCB layer 20 performs the laser beam of the same wavelength for the laser beam used in the first cutting, thereby eliminating the need to change the first cutting step of the cutting of the PCB layer 20 and the second cutting step of cutting the glass layer 10. The wavelength of the laser beam between them has the advantage of reducing process time and cost.

Moreover, it is preferable that the PCB layer 20 and the glass layer 10 which are not completely cut and used have a laser beam having a power lower than that of the laser beam used when the PCB layer 20 is first cut.

In general, the glass layer 10 is more brittle than the PCB layer 20 that is bonded to the semiconductor wafer 24, and thus is not cut with a laser beam having a lower power than the laser beam used when the PCB layer 20 is first cut. The remaining PCB layer 20 and the glass layer 10 are completely cut, so that breakage of cracks, chips, and the like which may occur on the glass layer 10 can be minimized.

And, preferably, at the time of cutting the glass layer 10, a laser beam width is smaller than the beam width in the beam width d 20 using the dicing PCB layers ₁ d ₂ of the laser beam.

Therefore, the laser beam can be cut along the moving path of the specific pattern formed between the widths d _{1 of the} cutting grooves 30 to cut the glass layer 10.

As an example, as shown in Figure 3, along the path through the coil form (L ₂₎ to move the cutting laser beam in the glass layer 10 between _a width of the cutting grooves 30 d, but not limited thereto.

The glass layer 10 can be cut by a laser beam that moves along a path (L ₂ ) of a spiral shape, thereby moving the laser beam simply along the cutting line (C), which can reduce the cause of the lightning when cutting The beam of light can have the advantage of damage such as cracks and breakage in the glass layer 10.

Also, in order to uniformly form the cut width and the cut depth of the glass layer 10, the glass layer 10 may be cut by a parallel laser beam of a telecentric lens, but is not limited thereto.

A method of manufacturing a semiconductor wafer module using the PCB substrate 1 having the above structure includes: preparing a PCB substrate 1 including a PCB layer 20 and a glass layer 10, wherein the PCB layer 20 is attached to perform a preset function a plurality of semiconductor wafers 24, and dividing the PCB layer 20 with the semiconductor wafer 24 as a reference, the glass layer 10 is attached to one side of the PCB layer 20; in the dividing step, the PCB layer 20 and the glass layer 10 are sequentially cut by the laser beam to the semiconductor 24 The PCB substrate 1 is divided in accordance with a predetermined shape for the reference.

The steps of preparing the PCB substrate 1 are as follows: In order to sequentially cut the PCB layer 20 and the glass layer 10 by the laser beam, the PCB substrate 1 on which the PCB layer 20 is disposed is provided, or the PCB substrate 1 on which the glass layer 10 is disposed is provided.

In one embodiment, when the PCB substrate 1 having the PCB layer 20 disposed thereon is provided, the PCB layer 20 is first cut, and then the glass layer 10 is cut a second time.

In another embodiment, when the PCB substrate 1 having the glass layer 10 disposed thereon is provided, the PCB layer 20 may be cut a second time after the glass layer 10 is first cut.

Specifically, the cutting step may include a first cutting step of cutting the PCB layer 20 and a second cutting step of cutting the glass layer 10.

For the first cutting step and the second cutting step, the cutting can be performed by a laser beam having a predetermined condition.

If the first cutting step of cutting the PCB layer 20 is performed prior to the second cutting step of the glass layer 10, the first cutting step may be cut to a height higher than the bottom surface of the PCB layer 20.

At this time, the second cutting step performed after the first cutting step may be performed on the PCB layer 20 The uncut portion is cut along with the glass layer 10.

At this time, the second cutting step may cut the glass layer 10 with a laser beam having a lower power than the laser beam used when cutting the PCB layer 20.

For the dividing step of the PCB substrate 1, the PCB layer 20 and the glass layer 10 can be sequentially cut by using a parallel laser beam having a predetermined beam width.

At this time, preferably, the second cutting step cuts the glass layer 10 by a parallel laser beam having a beam width smaller than a beam width of a laser beam used when the PCB layer 20 is cut.

Also, in the second cutting step, the laser beam can be moved along the path of the spiral shape to cut the glass layer 10.

The laser beam used in the dividing step may be a short-wavelength UV laser beam.

The above description is only a part of a preferred embodiment of the present invention, and it is well understood that the scope of the present invention is not limited to the above embodiments. The technical idea of the present invention described above and the technical idea including the above are all included in the scope of the present invention.

1‧‧‧PCB substrate

2‧‧‧Semiconductor chip module

10‧‧‧ glass layer

20‧‧‧PCB layer

22‧‧‧Substrate

24‧‧‧Semiconductor wafer

D ₁ ‧‧‧beamwidth

C‧‧‧ cutting line

Claims (11)

A method of manufacturing a semiconductor wafer module, comprising: preparing a PCB substrate (1), preparing the PCB substrate (1), the PCB substrate (1) comprising a PCB layer (20) and a glass layer (10), The PCB layer (20) is attached with a plurality of semiconductor wafers (24) performing a predetermined function, and the PCB layer (20) is divided based on the semiconductor wafer (24), and the glass layer (10) is attached to the PCB layer And a dividing step of sequentially cutting the PCB layer (20) and the glass layer (10) by using a laser beam, and dividing the PCB substrate according to a predetermined shape based on the semiconductor wafer (24) (1) )step. The method of fabricating a semiconductor wafer module according to claim 1, wherein the PCB layer (20) has a thickness greater than the glass layer (10). The method of manufacturing a semiconductor wafer module according to claim 1, wherein the dividing step comprises: a first cutting step of cutting the PCB layer (20); and cutting a second cutting of the glass layer (10) step. The method of manufacturing a semiconductor wafer module according to claim 3, wherein the first cutting step is cut to a height higher than a bottom surface of the PCB layer (20), and the second cutting step is simultaneously cut on the PCB The layer (20) is not cut and the glass layer 10. The method of manufacturing a semiconductor wafer module according to claim 3, wherein the first cutting step is performed after the second cutting step. The method of fabricating a semiconductor wafer module according to claim 4, wherein the second cutting step utilizes a laser beam having a power lower than a power of a laser beam used in cutting the PCB layer (20). To cut the glass layer (10). The method of manufacturing a semiconductor wafer module according to the fourth aspect of the invention, wherein the dividing step sequentially cuts the PCB layer (20) and the glass layer (10) by using a parallel laser beam having a predetermined beam width. . The method of manufacturing a semiconductor wafer module according to claim 7, wherein the second cutting step utilizes a beam width having a beam width smaller than a beam width of the laser beam used when cutting the PCB layer (20). The laser beam cuts the glass layer (10). The method of fabricating a semiconductor wafer module according to claim 8, wherein the second cutting step moves the laser beam along a path of a spiral shape to cut the glass layer (10). The method of manufacturing a semiconductor wafer module according to any one of claims 1 to 9, wherein the laser beam is a short-wavelength UV laser beam. The method of manufacturing a semiconductor wafer module according to any one of claims 1 to 9, wherein the semiconductor wafer module (2) is a fingerprint recognition sensor.