TW201741509A - Epitaxy growth equipment - Google Patents
Epitaxy growth equipment Download PDFInfo
- Publication number
- TW201741509A TW201741509A TW105135781A TW105135781A TW201741509A TW 201741509 A TW201741509 A TW 201741509A TW 105135781 A TW105135781 A TW 105135781A TW 105135781 A TW105135781 A TW 105135781A TW 201741509 A TW201741509 A TW 201741509A
- Authority
- TW
- Taiwan
- Prior art keywords
- epitaxial growth
- reaction chamber
- growth apparatus
- support platform
- reflective layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明涉及半導體製造技術領域，特別涉及一種磊晶生長設備。 The present invention relates to the field of semiconductor manufacturing technology, and in particular, to an epitaxial growth apparatus.
現有技術裡，在半導體元件製造技術中，磊晶生長設備廣泛地被採用，例如在晶圓的表面通過磊晶生長形成磊晶層。通過磊晶生長的磊晶層可在導電類型、電阻率等方面與基板不同，還可以生長不同厚度和不同要求的單晶層或多層單晶結構，從而大大提高元件設計的靈活性和元件的性能。在磊晶生長設備中，磊晶生長是通過將反應氣體引入到晶圓上，執行加熱以獲得預定的溫度，從而形成磊晶層。 In the prior art, in the semiconductor device manufacturing technology, an epitaxial growth device is widely used, for example, an epitaxial layer is formed by epitaxial growth on the surface of a wafer. The epitaxial layer grown by epitaxial growth can be different from the substrate in terms of conductivity type, resistivity, etc., and can also grow single crystal layers or multilayer single crystal structures of different thicknesses and different requirements, thereby greatly improving component design flexibility and component. performance. In the epitaxial growth apparatus, epitaxial growth is performed by introducing a reaction gas onto a wafer and performing heating to obtain a predetermined temperature, thereby forming an epitaxial layer.
在磊晶生長的過程中，晶圓需要在高達1000℃以上的高溫環境下。因此，磊晶生長設備具有較高的要求，通常會設置反射層來反射熱輻射從而保證加熱效率。但是，由於磊晶生長設備長期在高溫環境下使用，所述反射層的表面會在高溫下的發生形變(例如熔化)，導致所述反射層的反射效率變差。因此，現有技術的反射層的使用壽命較短，需要對反射層定期進行處理，以維持其反射熱輻射的效率。反射層的定期處理，提高了生產成本並降低了生產效率。 In the process of epitaxial growth, the wafer needs to be in a high temperature environment of up to 1000 ° C or higher. Therefore, the epitaxial growth apparatus has high requirements, and a reflective layer is usually provided to reflect heat radiation to ensure heating efficiency. However, since the epitaxial growth apparatus is used in a high temperature environment for a long period of time, the surface of the reflective layer may be deformed (for example, melted) at a high temperature, resulting in deterioration of the reflection efficiency of the reflective layer. Therefore, the prior art reflective layer has a short lifetime and requires periodic treatment of the reflective layer to maintain its efficiency of reflecting thermal radiation. Regular treatment of the reflective layer increases production costs and reduces production efficiency.
本發明的目的在於，通過提供一種磊晶生長設備解決反射層的使用壽命較短的問題。 It is an object of the present invention to solve the problem of a short service life of a reflective layer by providing an epitaxial growth apparatus.
為了解決上述問題，本發明提供一種磊晶生長設備，所述磊晶生長設備包括一反應室，所述反應室的內表面設有反射層，所述反射層上設有保護層。 In order to solve the above problems, the present invention provides an epitaxial growth apparatus comprising a reaction chamber, an inner surface of the reaction chamber is provided with a reflective layer, and a reflective layer is disposed on the reflective layer.
優選的，所述磊晶生長設備還包括：反應腔、加熱源和支撐平臺，所述反應腔設置在所述反應室內，所述加熱源設置在所述反應室內並位於所述反應腔外，所述支撐平臺設置在所述反應腔內，所述支撐平臺用於支撐晶圓。 Preferably, the epitaxial growth apparatus further includes: a reaction chamber, a heating source, and a support platform, wherein the reaction chamber is disposed in the reaction chamber, and the heating source is disposed in the reaction chamber and outside the reaction chamber, The support platform is disposed in the reaction chamber, and the support platform is used to support a wafer.
優選的，在所述磊晶生長設備中，所述反射層的材料為金。 Preferably, in the epitaxial growth apparatus, the material of the reflective layer is gold.
優選的，在所述磊晶生長設備中，所述保護層的材料為氮化鋁。 Preferably, in the epitaxial growth apparatus, the material of the protective layer is aluminum nitride.
優選的，在所述磊晶生長設備中，所述氮化鋁的厚度為800nm~1500nm。 Preferably, in the epitaxial growth apparatus, the aluminum nitride has a thickness of 800 nm to 1500 nm.
優選的，在所述磊晶生長設備中，所述氮化鋁通過物理氣相沉積形成在所述反射層上。 Preferably, in the epitaxial growth apparatus, the aluminum nitride is formed on the reflective layer by physical vapor deposition.
優選的，在所述磊晶生長設備中，所述物理氣相沉積為濺射鍍膜方式。 Preferably, in the epitaxial growth apparatus, the physical vapor deposition is a sputter coating method.
優選的，在所述磊晶生長設備中，所述濺射鍍膜方式採用鋁作為靶材，採用氮氣和氬氣作為反應氣體。 Preferably, in the epitaxial growth apparatus, the sputter coating method uses aluminum as a target, and nitrogen and argon are used as reaction gases.
優選的，在所述磊晶生長設備中，所述反應腔的材料為石英。 Preferably, in the epitaxial growth apparatus, the material of the reaction chamber is quartz.
優選的，在所述磊晶生長設備中，所述反應腔設置在所述反應室內的中心位置。 Preferably, in the epitaxial growth apparatus, the reaction chamber is disposed at a central position within the reaction chamber.
優選的，在所述磊晶生長設備中，所述加熱源為鹵素燈。 Preferably, in the epitaxial growth apparatus, the heating source is a halogen lamp.
優選的，在所述磊晶生長設備中，所述加熱源均勻分佈在所述反應腔外。優選的，在所述磊晶生長設備中，所述支撐平臺的材料為石墨。 Preferably, in the epitaxial growth apparatus, the heating source is evenly distributed outside the reaction chamber. Preferably, in the epitaxial growth apparatus, the material of the support platform is graphite.
優選的，在所述磊晶生長設備中，所述支撐平臺上形成有一層氮化矽。 Preferably, in the epitaxial growth apparatus, a layer of tantalum nitride is formed on the support platform.
優選的，在所述磊晶生長設備中，所述支撐平臺的中間設有一圓形槽。 Preferably, in the epitaxial growth apparatus, a circular groove is disposed in the middle of the support platform.
優選的，在所述磊晶生長設備中，所述支撐平臺為可旋轉的支撐平臺。 Preferably, in the epitaxial growth device, the support platform is a rotatable support platform.
優選的，在所述磊晶生長設備中，所述反應室的材料為不銹鋼。優選的，在所述磊晶生長設備中，所述反應室的外表面設有冷卻裝置。 Preferably, in the epitaxial growth apparatus, the material of the reaction chamber is stainless steel. Preferably, in the epitaxial growth apparatus, the outer surface of the reaction chamber is provided with a cooling device.
本發明提供的磊晶生長設備，通過在反應室內表面的反射層上設置保護層，從而延緩所述反射層的表面在高溫下的形變，因此延長了所述反射層的使用壽命，降低了生產成本，提高了生產效率。 The epitaxial growth apparatus provided by the present invention delays the deformation of the surface of the reflective layer at a high temperature by providing a protective layer on the reflective layer on the surface of the reaction chamber, thereby prolonging the service life of the reflective layer and reducing the production. Cost increases production efficiency.
10‧‧‧反應室 10‧‧‧Reaction room
20‧‧‧反應腔 20‧‧‧Reaction chamber
30‧‧‧加熱源 30‧‧‧heat source
40‧‧‧支撐平臺 40‧‧‧Support platform
50‧‧‧晶圓 50‧‧‧ wafer
60‧‧‧冷卻裝置 60‧‧‧Cooling device
110‧‧‧反射層 110‧‧‧reflective layer
120‧‧‧保護層 120‧‧‧Protective layer
第1圖為本發明的實施例的磊晶生長設備的剖面結構示意圖；第2圖為本發明的實施例的氮化鋁分子的結構示意圖； 第3圖為本發明的實施例的氮化鋁層分子的結構示意圖；第4圖為本發明的實施例的氮化鋁層通過X射線繞射分析的分析示意圖；第5圖為本發明的實施例的氮化鋁層的透明度與波長的關係示意圖。 1 is a schematic cross-sectional structural view of an epitaxial growth apparatus according to an embodiment of the present invention; and FIG. 2 is a schematic structural view of an aluminum nitride molecule according to an embodiment of the present invention; 3 is a schematic structural view of an aluminum nitride layer molecule according to an embodiment of the present invention; FIG. 4 is a schematic view showing an analysis of an aluminum nitride layer by X-ray diffraction analysis according to an embodiment of the present invention; A schematic diagram of the relationship between the transparency and the wavelength of the aluminum nitride layer of the embodiment.
為了使本發明的目的、特徵和優點能夠更加明顯易懂，請參閱附圖。須知，本說明書所附圖式所繪示的結構、比例、大小等，均僅用以配合說明書所揭示的內容，以供熟悉此技術的人士瞭解與閱讀，並非用以限定本發明可實施的限定條件，故不具技術上的實質意義，任何結構的修飾、比例關係的改變或大小的調整，在不影響本發明所能產生的功效及所能達成的目的下，均應仍落在本發明所揭示的技術內容得能涵蓋的範圍內。 In order to make the objects, features and advantages of the present invention more apparent, please refer to the attached drawings. It should be understood that the structures, the proportions, the sizes, and the like, which are illustrated in the specification of the present specification, are only used to clarify the contents disclosed in the specification for understanding and reading by those skilled in the art, and are not intended to limit the implementation of the present invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in the present invention without affecting the effects and the achievable purposes of the present invention. The disclosed technical content is within the scope of the disclosure.
如第1圖所示，本發明提供一種磊晶生長設備，包括一反應室10，所述反應室10的內表面設有反射層110，所述反射層上設有保護層120。 As shown in FIG. 1, the present invention provides an epitaxial growth apparatus comprising a reaction chamber 10, the inner surface of which is provided with a reflective layer 110, and a protective layer 120 is disposed on the reflective layer.
在本實施例中，優選的，所述磊晶生長設備還包括：反應腔20、加熱源30和支撐平臺40，所述反應腔20設置在所述反應室10內，所述加熱源30設置在所述反應室10內並位於所述反應腔20外，所述支撐平臺40設置在所述反應腔20內，所述支撐平臺40用於支撐晶圓50。 In this embodiment, preferably, the epitaxial growth apparatus further includes: a reaction chamber 20, a heating source 30, and a support platform 40. The reaction chamber 20 is disposed in the reaction chamber 10, and the heating source 30 is disposed. Within the reaction chamber 10 and outside the reaction chamber 20, the support platform 40 is disposed within the reaction chamber 20, and the support platform 40 is used to support the wafer 50.
優選的，所述反射層110的材料的金。金能夠較好的反射熱 輻射，例如，金對紅外線的反射能力接近100%，金的化學性質不活潑並且熔點高達1064℃，不容易與其它物質發生反應。 Preferably, the gold of the material of the reflective layer 110. Gold can better reflect heat Radiation, for example, gold has a reflectivity of nearly 100% for infrared light. Gold is chemically inert and has a melting point of up to 1064 ° C and is not easily reacted with other substances.
優選的，所述保護層120的材料為氮化鋁。如第2圖所示，氮化鋁的分子結構為具有六角的纖鋅礦結構(wurtzite structure)，以及如第3圖所示，氮化鋁層的分子結構具有非常穩定的特徵，氮化鋁的熔點高達2500℃。在第2圖和第3圖中，黑色球體表示鋁原子，白色球體表示氮原子，同時詳細說明了氮化鋁分子的結構包括鋁原子與氮原子之間的角度和距離等資料。如第4圖所示，對氮化鋁進行X射線繞射分析(phase analysis of xray diffraction，XRD)得到的分析示意圖，10所在面即為測試所在面，通過X射線繞射分析的繞射角度2 θ(deg)的調整能夠得到一峰強度(Intensity,(a.u.))表明氮化鋁的狀態。如第5圖所示，氮化鋁相對波長較長的熱輻射具有較高的透明度，從而使熱輻射穿過氮化鋁薄膜不會損失多少能量。 Preferably, the material of the protective layer 120 is aluminum nitride. As shown in Fig. 2, the molecular structure of aluminum nitride is a wurtzite structure having a hexagonal shape, and as shown in Fig. 3, the molecular structure of the aluminum nitride layer has a very stable characteristic, aluminum nitride. The melting point is as high as 2500 ° C. In Fig. 2 and Fig. 3, the black spheres represent aluminum atoms, the white spheres represent nitrogen atoms, and the structure of the aluminum nitride molecules including the angle and distance between the aluminum atoms and the nitrogen atoms are described in detail. As shown in Fig. 4, a schematic diagram of the analysis of the phase analysis of xray diffraction (XRD) of the aluminum nitride, the plane of the 10 is the plane of the test, and the diffraction angle of the X-ray diffraction analysis. The adjustment of 2 θ (deg) can obtain a peak intensity (Intensity, (au)) indicating the state of aluminum nitride. As shown in Fig. 5, aluminum nitride has a higher transparency with respect to longer-wavelength heat radiation, so that heat radiation does not lose much energy through the aluminum nitride film.
在具體的實施例中，氮化鋁的熔點高於金的熔點，在加熱過程中，形成的氮化鋁層能夠保持其結構並保持穩定，能夠起到保護金層的作用，從而有效的防止金層在高溫下的產生形變，解決金層在加熱過程中快速損耗使用壽命的問題。氮化鋁還具有良好的導熱係數(2W/(m．K))，能使熱量較快的傳遞防止熱量聚集，並且氮化鋁的維克氏硬度(Vicker’s hardness)為3500kgf/mm2，從而使氮化鋁具備優秀的工業加工性能。 In a specific embodiment, the melting point of the aluminum nitride is higher than the melting point of the gold. During the heating process, the formed aluminum nitride layer can maintain its structure and remain stable, and can function to protect the gold layer, thereby effectively preventing The gold layer is deformed at a high temperature to solve the problem that the gold layer quickly loses its service life during the heating process. Aluminum nitride also has a good thermal conductivity (2W/(m.K)), which enables faster heat transfer and prevents heat build-up, and the aluminum nitride has a Vicker's hardness of 3500 kgf/mm 2 , thereby The aluminum nitride has excellent industrial processing properties.
優選的，所述氮化鋁層通過物理氣相沉積(Physical Vapor Deposition，PVD)形成。優選的，所述物理氣相沉積為濺射鍍膜方式。優選的，所述濺射鍍膜方式採用鋁作為靶材，採用氮氣和氬氣作為反應氣體。在具體的實施方式中，靶材鋁基板在氮氣和氬氣的環境下，在電場力的作 用下形成的氬離子轟擊靶材鋁基板，使鋁與形成的氮離子生成氮化鋁。優選的，所述氮化鋁的厚度為800nm~1500nm，在此厚度範圍內能起到較好的保護作用。 Preferably, the aluminum nitride layer is formed by Physical Vapor Deposition (PVD). Preferably, the physical vapor deposition is a sputter coating method. Preferably, the sputter coating method uses aluminum as a target, and nitrogen and argon are used as reaction gases. In a specific embodiment, the target aluminum substrate is in an electric field force under the environment of nitrogen and argon. The target aluminum substrate is bombarded with the argon ions formed under the surface to form aluminum nitride with the formed nitrogen ions. Preferably, the aluminum nitride has a thickness of 800 nm to 1500 nm, and can have a good protection effect in the thickness range.
繼續參考第1圖，優選的，所述反應腔20設置在所述反應室10內的中心位置，從而使所述反應腔20更好的接受通過反射層110反射的熱輻射作用到所述反應腔20上，在具體的實施方式中，所述反應腔20是具有兩端開口，用於通入反應氣體，此外所述反應腔20為所述支撐平臺40提供設置區域的結構(即第1圖中反應腔20的下面部分結構)，同時為所述反應腔20提供支撐。 Continuing with reference to Figure 1, preferably, the reaction chamber 20 is disposed at a central location within the reaction chamber 10 such that the reaction chamber 20 better accepts thermal radiation reflected by the reflective layer 110 to the reaction. On the cavity 20, in a specific embodiment, the reaction chamber 20 has an opening at both ends for introducing a reaction gas, and further, the reaction chamber 20 provides a structure for providing the installation platform 40 (ie, the first The lower portion of the reaction chamber 20 is shown in the figure while providing support for the reaction chamber 20.
優選的，所述加熱源30均勻分佈在所述反應腔20外，從而使所述反應腔20均勻受熱。優選的，所述加熱源30為鹵素燈，鹵素燈作為熱輻射光源能產生大量的熱量，具有較高的發光效率。在具體的實施方式中，所述加熱源30是圍繞所述反應腔20設置的，需要說明的是在第1圖中僅為了方便圖示，表明所述加熱源的燈是管狀的，所述加熱源的燈朝向方向採用了相互垂直的兩種不同表現形式，在其它的實施方式中，可根據加熱源30的形狀合理的均勻分佈在反應腔外，例如平行分佈，交錯分佈或矩陣分佈等分佈方式。 Preferably, the heat source 30 is evenly distributed outside the reaction chamber 20, so that the reaction chamber 20 is uniformly heated. Preferably, the heating source 30 is a halogen lamp, and the halogen lamp can generate a large amount of heat as a heat radiation source, and has high luminous efficiency. In a specific embodiment, the heating source 30 is disposed around the reaction chamber 20, and it should be noted that in FIG. 1 only for convenience of illustration, the lamp of the heating source is tubular, The lamp orientation direction of the heating source adopts two different expressions perpendicular to each other. In other embodiments, the shape of the heating source 30 can be uniformly distributed outside the reaction cavity according to the shape of the heating source 30, for example, parallel distribution, staggered distribution or matrix distribution, etc. Distribution method.
在本實施例中，所述反應腔20的材料為石英，石英具有穩定的化學性質並且具有較高的熔點，從而具有的耐高溫、熱膨脹係數小、高度絕緣、耐腐蝕的優點。優選的，所述支撐平臺40的材料為石墨，石墨的熔點高達3850℃，石墨有良好的化學穩定性，能耐酸、耐鹼和耐有機溶劑的腐蝕，石墨還有具較佳的可塑性方便加工成形。優選的，所述支撐平臺 40上沉積一層氮化矽，氮化矽的熔點高達1900℃，氮化矽材料具有熱穩定性高、抗氧化能力強和耐化學腐蝕的特性，由於氮化矽是矽的化合物中性質較穩定的，適合直接與晶圓接觸。優選的，所述支撐平臺40的中間設有一圓形槽，既形成一環形支撐面，通過所述圓形槽來減少所述支撐平臺40與晶圓50的接觸面積。優選的，所述反應室10的材料為不銹鋼，不銹鋼便於工業加工，能夠滿足溫度等工藝要求。 In the present embodiment, the material of the reaction chamber 20 is quartz, and the quartz has stable chemical properties and a high melting point, thereby having the advantages of high temperature resistance, small thermal expansion coefficient, high insulation, and corrosion resistance. Preferably, the material of the support platform 40 is graphite, the melting point of the graphite is up to 3850 ° C, the graphite has good chemical stability, can resist acid, alkali and organic solvent corrosion, and the graphite has better plasticity and convenient processing. Forming. Preferably, the support platform A layer of tantalum nitride is deposited on 40, and the melting point of tantalum nitride is as high as 1900 ° C. The tantalum nitride material has high thermal stability, strong oxidation resistance and chemical resistance, and is stable in properties of tantalum nitride. Suitable for direct contact with the wafer. Preferably, a circular groove is formed in the middle of the support platform 40 to form an annular support surface, and the contact area between the support platform 40 and the wafer 50 is reduced by the circular groove. Preferably, the material of the reaction chamber 10 is stainless steel, and the stainless steel is convenient for industrial processing, and can meet the process requirements such as temperature.
優選的，所述反應室10的外表面設有冷卻裝置60，通過所述冷卻裝置60來降低所述反射層的溫度，從而防止所述反射層在高溫下快速損耗使用壽命。在具體的實施方式中，所述冷卻裝置60採用水冷的方式，通過設置管路在所述反應室外，通過將水形成蒸汽使所述反應室10的溫度降低，防止所述反應室10長期處於高溫狀態下降低使用壽命。所述支撐平臺40為可旋轉的支撐平臺，通過可旋轉的支撐平臺帶動晶圓50一起轉動，從而使晶圓50更均勻的受熱。在具體的實施方式可，所述支撐平臺連接在一可轉動的軸上，通過電機帶動軸上的齒輪來實現旋轉，在其它的實施例中，也可以採用電磁驅動等其它方式實現旋轉。 Preferably, the outer surface of the reaction chamber 10 is provided with a cooling device 60, by which the temperature of the reflective layer is lowered, thereby preventing the reflective layer from rapidly losing its service life at high temperatures. In a specific embodiment, the cooling device 60 is water-cooled, and the temperature of the reaction chamber 10 is lowered by forming water to form a steam in the reaction chamber, thereby preventing the reaction chamber 10 from being in the long-term. Reduces service life at high temperatures. The support platform 40 is a rotatable support platform, and the wafer 50 is rotated together by a rotatable support platform, so that the wafer 50 is more uniformly heated. In a specific embodiment, the support platform is coupled to a rotatable shaft, and the gear is driven by the motor to realize the rotation. In other embodiments, the rotation may be implemented by other means such as electromagnetic driving.
本發明提供的磊晶生長設備，通過在反應室內表面的反射層上設置保護層，從而延緩所述反射層的表面在高溫下的形變，因此延長了所述反射層的使用壽命，降低了生產成本，提高了生產效率。 The epitaxial growth apparatus provided by the present invention delays the deformation of the surface of the reflective layer at a high temperature by providing a protective layer on the reflective layer on the surface of the reaction chamber, thereby prolonging the service life of the reflective layer and reducing the production. Cost increases production efficiency.
上述僅為本發明的優選實施例而已，並不對本發明起到任何限制作用。任何所屬技術領域的技術人員，在不脫離本發明的技術方案的範圍內，對本發明揭露的技術方案和技術內容做任何形式的等同替換或修改等變動，均屬未脫離本發明的技術方案的內容，仍屬於本發明的保護範 圍之內。 The above is only a preferred embodiment of the present invention and does not impose any limitation on the present invention. Any changes in the technical solutions and technical contents disclosed in the present invention may be made by those skilled in the art without departing from the technical scope of the present invention. Content, still belongs to the protection scope of the present invention Within the fence.
10‧‧‧反應室 10‧‧‧Reaction room
20‧‧‧反應腔 20‧‧‧Reaction chamber
30‧‧‧加熱源 30‧‧‧heat source
40‧‧‧支撐平臺 40‧‧‧Support platform
50‧‧‧晶圓 50‧‧‧ wafer
60‧‧‧冷卻裝置 60‧‧‧Cooling device
110‧‧‧反射層 110‧‧‧reflective layer
120‧‧‧保護層 120‧‧‧Protective layer
Claims (18)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??201610353583.5 | 2016-05-25 | ||
| CN201610353583.5A CN107435164A (en) | 2016-05-25 | 2016-05-25 | Epitaxial growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201741509A true TW201741509A (en) | 2017-12-01 |
| TWI648440B TWI648440B (en) | 2019-01-21 |
Family
ID=60453005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105135781A TWI648440B (en) | 2016-05-25 | 2016-11-03 | Epitaxial growth equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107435164A (en) |
| TW (1) | TWI648440B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717536B (en) * | 2021-11-17 | 2023-04-07 | 深圳市纳设智能装备有限公司 | Reaction chamber and reaction device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
| CN101294749A (en) * | 2007-04-24 | 2008-10-29 | 梁美意 | Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof |
| US20110065276A1 (en) * | 2009-09-11 | 2011-03-17 | Applied Materials, Inc. | Apparatus and Methods for Cyclical Oxidation and Etching |
| CN102330147B (en) * | 2010-07-14 | 2015-11-25 | 郭志凯 | A kind of silicon chip produces epitaxial device and system thereof |
| TWI470672B (en) * | 2011-08-22 | 2015-01-21 | Soitec Silicon On Insulator | Direct liquid injection for halide vapor phase epitaxy systems and methods |
| US10109481B2 (en) * | 2012-07-02 | 2018-10-23 | Applied Materials, Inc. | Aluminum-nitride buffer and active layers by physical vapor deposition |
| TWI650832B (en) * | 2013-12-26 | 2019-02-11 | 維克儀器公司 | Wafer carrier having thermal cover for chemical vapor deposition systems |
| CN104089423A (en) * | 2014-07-26 | 2014-10-08 | 山东中信能源联合装备股份有限公司 | Full-glass high-temperature vacuum heat collecting tube and film coating method thereof |
-
2016
- 2016-05-25 CN CN201610353583.5A patent/CN107435164A/en active Pending
- 2016-11-03 TW TW105135781A patent/TWI648440B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI648440B (en) | 2019-01-21 |
| CN107435164A (en) | 2017-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101966566B1 (en) | Support cylinder for thermal processing chamber | |
| US9558982B2 (en) | Minimal contact edge ring for rapid thermal processing | |
| CN107464751B (en) | Method and apparatus for processing substrate | |
| US9514969B2 (en) | Apparatus for reducing the effect of contamination on a rapid thermal process | |
| Seong et al. | Enhanced uniformity in electrical and optical properties of ITO thin films using a wide thermal annealing system | |
| Bilokur et al. | High temperature spectrally selective solar absorbers using plasmonic AuAl2: AlN nanoparticle composites | |
| TW201741509A (en) | Epitaxy growth equipment | |
| KR20150104575A (en) | Systems and methods for thermally managing high-temperature processes on temperature sensitive substrates | |
| Lee et al. | Graphene protected Ag nanowires: Blocking of surface migration for thermally stable and wide-range-wavelength transparent flexible electrodes | |
| FR2462487A1 (en) | PROCESS FOR PRODUCING TRANSPARENT AND CONDUCTIVE INDIUM OXIDE LAYERS OF ELECTRICITY | |
| US20090146541A1 (en) | Infrared reflector and heating device having the same | |
| WO2022010571A1 (en) | Spot heating by moving a beam with horizontal rotary motion | |
| Otieno et al. | Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films | |
| TW202105568A (en) | Processing chamber for thermal processes | |
| Li et al. | Moderating oxygen deficiency induced better thermochromic properties of monoclinic vanadium dioxide thin films | |
| JPS5992019A (en) | Vacuum vapor deposition of material onto heating plate | |
| US20110005925A1 (en) | Target backing tube, cylindrical target assembly and sputtering system | |
| JP4144268B2 (en) | Vertical heat treatment equipment | |
| Zarrinkhameh et al. | Effect of oxidation and annealing temperature on optical and structural properties of SnO 2 | |
| Manwani et al. | Effect of annealing temperature on the microstructure and optoelectronic properties of niobium-doped anatase TiO2 thin films grown on soda-lime glass substrate | |
| US10651034B2 (en) | Thermal absorption coating on sapphire for epitaxial process | |
| RU2365842C1 (en) | Crucible aluminium evaporator for molecular-beam epitaxy | |
| EP0826434B1 (en) | Process and apparatus for preparing thin films of polymers and composite materials on different kind of substrates | |
| Kim et al. | Improvement of structural, electrical, and optical properties of sol–gel-derived indium–tin-oxide films by high efficiency microwave irradiation | |
| Varnamkhasti et al. | Influence of heat treatment on characteristics of In 2 O 3/Ag/MoO 3 multilayer films as transparent anode for optoelectronic applications |