CN107435164A - Epitaxial growth equipment - Google Patents

Epitaxial growth equipment Download PDF

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Publication number
CN107435164A
CN107435164A CN201610353583.5A CN201610353583A CN107435164A CN 107435164 A CN107435164 A CN 107435164A CN 201610353583 A CN201610353583 A CN 201610353583A CN 107435164 A CN107435164 A CN 107435164A
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CN
China
Prior art keywords
epitaxial growth
growth equipment
reaction chamber
reative cell
reflecting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610353583.5A
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Chinese (zh)
Inventor
刘源
保罗·邦凡蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zing Semiconductor Corp
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Zing Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zing Semiconductor Corp filed Critical Zing Semiconductor Corp
Priority to CN201610353583.5A priority Critical patent/CN107435164A/en
Priority to TW105135781A priority patent/TWI648440B/en
Publication of CN107435164A publication Critical patent/CN107435164A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention provides a kind of epitaxial growth equipment, and the epitaxial growth equipment includes a reative cell, and the inner surface of the reative cell is provided with reflecting layer, and the reflecting layer is provided with protective layer.Epitaxial growth equipment provided by the invention; by setting protective layer on the reflecting layer of reaction chamber internal surface, so as to delay the deformation of the surface in the reflecting layer at high temperature, therefore the service life in the reflecting layer is extended; production cost is reduced, improves production efficiency.

Description

Epitaxial growth equipment
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of epitaxial growth equipment.
Background technology
In prior art, in semiconductor device processing technology, epitaxial growth equipment is widely used, Such as on the surface of wafer by being epitaxially-formed epitaxial layer.Can be by the epitaxial layer of epitaxial growth Conduction type, resistivity etc. are different from substrate, can also grow different-thickness and different requirements Single crystalline layer or multilayer mono-crystalline structures, so as to greatly improve the performance of the flexibility of device design and device. In epitaxial growth equipment, epitaxial growth is by introducing reaction gases on wafer, performing heating To obtain predetermined temperature, so as to form epitaxial layer.
During epitaxial growth, wafer is needed under up to more than 1000 DEG C of hot environment.Cause This, epitaxial growth equipment has higher requirement, it will usually set reflecting layer come reflective thermal radiation so as to Ensure the efficiency of heating surface.But because epitaxial growth equipment uses in high temperature environments for a long time, it is described anti- The surface for penetrating layer can be at high temperature deform upon (such as fusing), cause the reflection in the reflecting layer to be imitated Rate is deteriorated.Therefore, the service life in the reflecting layer of prior art is shorter, it is necessary to periodically enter to reflecting layer Row processing, to maintain the efficiency of its reflective thermal radiation.The regular processing in reflecting layer, improves and is produced into This simultaneously reduces production efficiency.
The content of the invention
It is an object of the present invention to solves the use longevity in reflecting layer by providing a kind of epitaxial growth equipment The problem of life is shorter.
In order to solve the above problems, the present invention provides a kind of epitaxial growth equipment, and the epitaxial growth is set Standby to include a reative cell, the inner surface of the reative cell is provided with reflecting layer, and the reflecting layer, which is provided with, to be protected Sheath.
Preferably, the epitaxial growth equipment also includes：Reaction chamber, heating source and support platform, it is described Reaction chamber is arranged in the reative cell, and the heating source is arranged in the reative cell and positioned at described Outside reaction chamber, the support platform is arranged in the reaction chamber, and the support platform is used to support crystalline substance Circle.
Preferably, in the epitaxial growth equipment, the material in the reflecting layer is gold.
Preferably, in the epitaxial growth equipment, the material of the protective layer is aluminium nitride.
Preferably, in the epitaxial growth equipment, the thickness of the aluminium nitride is 800nm~1500nm.
Preferably, in the epitaxial growth equipment, the aluminium nitride is formed by physical vapour deposition (PVD) On the reflecting layer.
Preferably, in the epitaxial growth equipment, the physical vapour deposition (PVD) is sputter coating mode.
Preferably, in the epitaxial growth equipment, the sputter coating mode using aluminium as target, Using nitrogen and argon gas as reacting gas.
Preferably, in the epitaxial growth equipment, the material of the reaction chamber is quartz.
Preferably, in the epitaxial growth equipment, the reaction chamber is arranged in the reative cell Center.
Preferably, in the epitaxial growth equipment, the heating source is Halogen lamp LED.
Preferably, in the epitaxial growth equipment, the heating source is evenly distributed on the reaction chamber Outside.Preferably, in the epitaxial growth equipment, the material of the support platform is graphite.
Preferably, in the epitaxial growth equipment, formed with one layer of silicon nitride in the support platform.
Preferably, in the epitaxial growth equipment, the centre of the support platform is provided with a circular trough.
Preferably, in the epitaxial growth equipment, the support platform is rotatable support platform.
Preferably, in the epitaxial growth equipment, the material of the reative cell is stainless steel.It is preferred that , in the epitaxial growth equipment, the outer surface of the reative cell is provided with cooling device.
Epitaxial growth equipment provided by the invention, protected by being set on the reflecting layer of reaction chamber internal surface Sheath, so as to delay the deformation of the surface in the reflecting layer at high temperature, therefore extend the reflection The service life of layer, reduces production cost, improves production efficiency.
Brief description of the drawings
Fig. 1 is the cross-sectional view of the epitaxial growth equipment of embodiments of the invention；
Fig. 2 is the structural representation of the aluminium nitride molecule of embodiments of the invention；
Fig. 3 is the structural representation of the aln layer molecule of embodiments of the invention；
Fig. 4 is the analysis schematic diagram that the aln layer of embodiments of the invention passes through X-ray diffraction analysis；
Fig. 5 is the transparency of aln layer and the relation schematic diagram of wavelength of embodiments of the invention.
Embodiment
In order that objects, features and advantages of the present invention can be more obvious understandable, accompanying drawing is referred to. It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only coordinating Content disclosed in bright book, so that those skilled in the art understands and reads, it is not limited to this Enforceable qualifications are invented, therefore do not have technical essential meaning, the modification of any structure, ratio The example change of relation or the adjustment of size, are not influenceing the effect of present invention can be generated and can reach Purpose under, all should still fall in the range of disclosed technology contents are obtained and can covered.
As shown in figure 1, the present invention provides a kind of epitaxial growth equipment, including a reative cell 10, it is described The inner surface of reative cell 10 is provided with reflecting layer 110, and the reflecting layer is provided with protective layer 120.
In the present embodiment, it is preferred that the epitaxial growth equipment also includes：Reaction chamber 20, heating Source 30 and support platform 40, the reaction chamber 20 are arranged in the reative cell 10, the heating Source 30 is arranged in the reative cell 10 and outside the reaction chamber 20, the support platform 40 It is arranged in the reaction chamber 20, the support platform 40 is used to support wafer 50.
Preferably, the gold of the material in the reflecting layer 110.Gold can preferable reflective thermal radiation, example Such as, gold to the albedo of infrared ray close to 100%, golden chemical property torpescence and fusing point is up to 1064 DEG C, it is not easy to reacted with other materials.
Preferably, the material of the protective layer 120 is aluminium nitride.As shown in Fig. 2 point of aluminium nitride Minor structure is the wurtzite structure (wurtzite structure) with hexagonal, and as shown in figure 3, The molecular structure of aln layer has highly stable feature, and the fusing point of aluminium nitride is up to 2500 DEG C. In Fig. 2 and Fig. 3, black sphere represents aluminium atom, and white spheres represent nitrogen-atoms, while specifically Understanding the structure of aluminium nitride molecule includes the data such as the angle and distance between aluminium atom and nitrogen-atoms.Such as Shown in Fig. 4, to aluminium nitride carry out X-ray diffraction analysis (phase analysis of xray diffraction, XRD the analysis schematic diagram) obtained, 10 place faces are face where testing, and pass through X-ray diffraction point The θ of angle of diffraction 2 (deg) of analysis adjustment can obtain a peak intensity (Intensity, (a.u.)) and show The state of aluminium nitride.As shown in figure 5, the longer heat radiation of aluminium nitride relative wavelength have it is higher saturating Lightness, so that how many energy will not be lost through aluminium nitride film for heat radiation.
In the particular embodiment, the fusing point of aluminium nitride in heating process, is formed higher than the fusing point of gold Aln layer can keep its structure and keep stable, can play a part of protecting layer gold, so as to Effective to prevent the generation deformation of layer gold at high temperature, solving layer gold rapid deterioration in heating process makes The problem of with the life-span.Aluminium nitride also has good thermal conductivity factor (2W/ (mK)), and heat can be made very fast Transmission prevent heat from assembling, and the vickers hardness (Vicker ' s hardness) of aluminium nitride be 3500 kgf/mm2, so that aluminium nitride possesses outstanding industrial processes performance.
Preferably, the aln layer by physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) formed.Preferably, the physical vapour deposition (PVD) is sputter coating mode.Preferably, it is described to splash Plated film mode is penetrated using aluminium as target, using nitrogen and argon gas as reacting gas.Specific real Apply in mode, target aluminium base is formed in the environment of nitrogen and argon gas in the presence of electric field force Argon ion bombardment target aluminium base, make aluminium and the Nitrogen ion generation aluminium nitride formed.Preferably, it is described The thickness of aluminium nitride is 800nm~1500nm, and preferable protective effect can be played in this thickness range.
With continued reference to Fig. 1, it is preferred that during the reaction chamber 20 is arranged in the reative cell 10 Heart position, so that the heat radiation that the reaction chamber 20 preferably receives to reflect by reflecting layer 110 is made Use on the reaction chamber 20, in a particular embodiment, the reaction chamber 20 is with both ends Opening, for being passed through reacting gas, the reaction chamber 20 is that the support platform 40 offer is set in addition The structure (both in Fig. 1 below reaction chamber 20 part-structure) in region is put, while is the reaction chamber 20 provide support.
Preferably, the heating source 30 is evenly distributed on outside the reaction chamber 20, so that described anti- Answer the thermally equivalent of chamber 20.Preferably, the heating source 30 is Halogen lamp LED, and Halogen lamp LED is as heat radiation Light source can produce substantial amounts of heat, have higher luminous efficiency.In a particular embodiment, institute State heating source 30 be around the reaction chamber 20 set, it is necessary to explanation be in Fig. 1 only for Convenient diagram, the lamp for showing the heating source is tubulose, and the lamp direction of the heating source uses Orthogonal two kinds of different expression forms, in other embodiments, can be according to heating source 30 Shape be reasonably evenly distributed on outside reaction chamber, such as parallel distribution is interspersed or matrix distribution Decile mode for cloth.
In the present embodiment, the material of the reaction chamber 20 is quartz, and quartz has stabilization chemically Matter and there is higher fusing point, so as to the high temperature resistant that has, thermal coefficient of expansion is small, high-insulation, resistance to The advantages of corrosion.Preferably, the material of the support platform 40 is graphite, and the fusing point of graphite is up to 3850 DEG C, graphite has good chemical stability, acidproof, alkaline-resisting and organic solvent-resistant the corrosion of energy, stone Ink also has preferable plasticity and conveniently shaped.Preferably, one is deposited in the support platform 40 Layer silicon nitride, the fusing point of silicon nitride are up to 1900 DEG C, and silicon nitride material has heat endurance height, antioxygen Change ability by force and characteristic resistant to chemical etching, due to silicon nitride be silicon compound in property it is relatively stable, It is adapted to directly and wafer contacts.Preferably, the centre of the support platform 40 is provided with a circular trough, both An annular support surface is formed, the support platform 40 and wafer 50 are reduced by the circular trough Contact area.Preferably, the material of the reative cell 10 is stainless steel, and stainless steel is easy to industrial processes, It disclosure satisfy that the technological requirements such as temperature.
Preferably, the outer surface of the reative cell 10 is provided with cooling device 60, passes through the cooling device 60 reduce the temperature in the reflecting layer, so as to prevent that rapid deterioration uses at high temperature for the reflecting layer Life-span.In a particular embodiment, the cooling device 60 passes through setting by the way of water cooling Pipeline, by reducing the temperature of the reative cell 10 water formation steam, is prevented outside the reative cell Only service life is reduced under the hot soak condition of reative cell 10.The support platform 40 is Rotatable support platform, wafer 50 is driven to rotate together by rotatable support platform, so that Evenly heated of wafer 50.Specific embodiment can, the support platform, which is connected to one, to be turned On dynamic axle, rotation is realized by the gear in motor moving axis, in other embodiments, The other manners such as electromagnetic drive can be used to realize rotation.
Epitaxial growth equipment provided by the invention, protected by being set on the reflecting layer of reaction chamber internal surface Sheath, so as to delay the deformation of the surface in the reflecting layer at high temperature, therefore extend the reflection The service life of layer, reduces production cost, improves production efficiency.
Foregoing description is only the description to present pre-ferred embodiments, not to any of the scope of the invention Limit, any change, the modification that the those of ordinary skill in field of the present invention does according to the disclosure above content, Belong to the protection domain of claims.

Claims (18)

1. a kind of epitaxial growth equipment, it is characterised in that the epitaxial growth equipment includes a reaction Room, the inner surface of the reative cell are provided with reflecting layer, and the reflecting layer is provided with protective layer.
2. epitaxial growth equipment as claimed in claim 1, it is characterised in that the epitaxial growth Equipment also includes：
Reaction chamber, the reaction chamber are arranged in the reative cell；
Heating source, the heating source are arranged in the reative cell and outside the reaction chamber；
Support platform, the support platform are arranged in the reaction chamber, and the support platform is used for branch Support wafer.
3. epitaxial growth equipment as claimed in claim 1, it is characterised in that the reflecting layer Material is gold.
4. epitaxial growth equipment as claimed in claim 1, it is characterised in that the protective layer Material is aluminium nitride.
5. epitaxial growth equipment as claimed in claim 1, it is characterised in that the aluminium nitride Thickness is 800nm~1500nm.
6. epitaxial growth equipment as claimed in claim 1, it is characterised in that the aluminium nitride leads to Physical vapour deposition (PVD) is crossed to be formed on the reflecting layer.
7. epitaxial growth equipment as claimed in claim 6, it is characterised in that the physical vapor It is deposited as sputter coating mode.
8. epitaxial growth equipment as claimed in claim 7, it is characterised in that the sputter coating Mode uses aluminium as target, using nitrogen and argon gas as reacting gas.
9. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The material of the reaction chamber is quartz.
10. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The reaction chamber is arranged on the center in the reative cell.
11. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The heating source is Halogen lamp LED.
12. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The heating source is evenly distributed on outside the reaction chamber.
13. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The material of the support platform is graphite.
14. epitaxial growth equipment as claimed in claim 13, it is characterised in that the support is flat Formed with one layer of silicon nitride on platform.
15. epitaxial growth equipment as claimed in claim 13, it is characterised in that the support is flat The centre of platform is provided with a circular trough.
16. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The support platform is rotatable support platform.
17. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The material of the reative cell is stainless steel.
18. the epitaxial growth equipment as described in any one in claim 1~8, it is characterised in that The outer surface of the reative cell is provided with cooling device.
CN201610353583.5A 2016-05-25 2016-05-25 Epitaxial growth equipment Pending CN107435164A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201610353583.5A CN107435164A (en) 2016-05-25 2016-05-25 Epitaxial growth equipment
TW105135781A TWI648440B (en) 2016-05-25 2016-11-03 Epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610353583.5A CN107435164A (en) 2016-05-25 2016-05-25 Epitaxial growth equipment

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TW (1) TWI648440B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114717536A (en) * 2021-11-17 2022-07-08 深圳市纳设智能装备有限公司 Reaction chamber and reaction device

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CN101294749A (en) * 2007-04-24 2008-10-29 梁美意 Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof
CN102330147A (en) * 2010-07-14 2012-01-25 郭志凯 Novel epitaxial device for producing silicon chips and system thereof
CN104089423A (en) * 2014-07-26 2014-10-08 山东中信能源联合装备股份有限公司 Full-glass high-temperature vacuum heat collecting tube and film coating method thereof

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TWI470672B (en) * 2011-08-22 2015-01-21 Soitec Silicon On Insulator Direct liquid injection for halide vapor phase epitaxy systems and methods
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Publication number Priority date Publication date Assignee Title
CN101294749A (en) * 2007-04-24 2008-10-29 梁美意 Heat-collecting tube with solar energy selective absorption coating and manufacturing method thereof
CN102330147A (en) * 2010-07-14 2012-01-25 郭志凯 Novel epitaxial device for producing silicon chips and system thereof
CN104089423A (en) * 2014-07-26 2014-10-08 山东中信能源联合装备股份有限公司 Full-glass high-temperature vacuum heat collecting tube and film coating method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114717536A (en) * 2021-11-17 2022-07-08 深圳市纳设智能装备有限公司 Reaction chamber and reaction device
WO2023088147A1 (en) * 2021-11-17 2023-05-25 深圳市纳设智能装备有限公司 Reaction chamber and reaction device

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Publication number Publication date
TW201741509A (en) 2017-12-01
TWI648440B (en) 2019-01-21

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Application publication date: 20171205