TW201739841A - Back light unit comprising rare earth metal oxide-added LED package - Google Patents

Back light unit comprising rare earth metal oxide-added LED package Download PDF

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TW201739841A
TW201739841A TW106102582A TW106102582A TW201739841A TW 201739841 A TW201739841 A TW 201739841A TW 106102582 A TW106102582 A TW 106102582A TW 106102582 A TW106102582 A TW 106102582A TW 201739841 A TW201739841 A TW 201739841A
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light
emitting diode
rare earth
earth metal
metal oxide
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TW106102582A
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柳井坤
金泳植
高多賢
任瑞瑛
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曉星股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/247Carbonates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90Methods of manufacture
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Geology (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

The present disclosure relates to an LED package having enhanced light extraction efficiency by adding a resin for LED package encapsulation and rare earth metal oxides, and a BLU comprising the same.

Description

包含添加稀土金屬氧化物之發光二極體封裝體之背光單元 Backlight unit comprising a rare earth metal oxide-emitting LED package

本揭露有關於包含添加稀土金屬氧化物之發光二極體(下稱LED)封裝體之一種背光單元(下稱BLU)。特別地,本揭露關於藉由添加發光二極體封裝體封裝用之一樹脂與稀土金屬氧化物而具有較佳光汲出效率之一種發光二極體封裝體,及包括此發光二極體封裝體之背光單元。 The present disclosure relates to a backlight unit (hereinafter referred to as BLU) including a light-emitting diode (hereinafter referred to as LED) package to which a rare earth metal oxide is added. In particular, the present disclosure relates to a light emitting diode package having better light extraction efficiency by adding a resin and a rare earth metal oxide for encapsulating a light emitting diode package, and including the light emitting diode package The backlight unit.

由於全球節能的趨勢及藉由化合物半導體的技術發展所達成之應用品質的改善,發光二極體的工業化已經快速進步。作為發光裝置之發光二極體為藉由轉化電能成為紅外線或使用化合物半導體特性之光線而傳送與接收訊號之一種半導體,並應用於家用電子產品、遙控器、電子螢幕顯示器、指示器、各種自動化裝備及相似物。 Due to the global energy saving trend and the improvement in application quality achieved by the development of compound semiconductor technology, the industrialization of light-emitting diodes has rapidly progressed. A light-emitting diode as a light-emitting device is a semiconductor that transmits and receives signals by converting electric energy into infrared rays or using light of a characteristic of a compound semiconductor, and is applied to household electronic products, remote controllers, electronic screen displays, indicators, various automations. Equipment and similar items.

發光二極體亦應用於顯示器之中。作為顯示器,液晶顯示器(下稱LCD)為最常使用的,而不同於自發光之主動式有機發光二極體(AMOLED),液晶顯示器並不會自發光而因此需要分離之光源,其稱為背光單元。 Light-emitting diodes are also used in displays. As a display, a liquid crystal display (hereinafter referred to as an LCD) is most commonly used, and unlike a self-illuminating active organic light emitting diode (AMOLED), a liquid crystal display does not self-illuminate and thus requires a separate light source, which is called Backlight unit.

背光單元扮演了從不會發光之液晶顯示單元之後側均勻地投射光線之一個角色,所以可以呈現顯示影像。如此 之背光單元包括均勻地設置發光二極體背光單元於液晶顯示單元面板之後的直下式(direct-lit)背光單元、以及使用位於左側與右側之發光二極體背光單元並將之反射至導光板(具有均勻地散射發光二極體所產生之光線至整個螢幕上之角色之平板)上之側光型(edge-lit)背光單元,而就已成為重要問題之纖薄化(slimness)而言,側光型為優選的。 The backlight unit plays a role of uniformly projecting light from the rear side of the liquid crystal display unit that does not emit light, so that the display image can be presented. in this way The backlight unit includes a direct-lit backlight unit that uniformly sets the light-emitting diode backlight unit behind the liquid crystal display unit panel, and uses the light-emitting diode backlight unit located on the left and right sides and reflects the same to the light guide plate. An edge-lit backlight unit (having a flat plate that uniformly scatters the light generated by the light-emitting diode to the character on the entire screen), and has become an important issue in terms of slimness The side light type is preferred.

為了更為纖薄(slimmer),便需要縮減於側光型中占據最大厚度之導光板。然而,當縮減導光板時,亦縮減了發光二極體封裝體之尺寸而導致了光量的減少。如此,便需要於縮減導光板時維持光量的方法。其結果為,需增加入射至導光板之光的效率(光入射效率)。 In order to be slimmer, it is necessary to reduce the light guide plate which occupies the largest thickness among the side light types. However, when the light guide plate is reduced, the size of the light emitting diode package is also reduced to cause a reduction in the amount of light. Thus, there is a need for a method of maintaining the amount of light when the light guide plate is reduced. As a result, it is necessary to increase the efficiency (light incident efficiency) of light incident on the light guide plate.

因應以上描述,本揭露關於提供一種包括添加稀土金屬氧化物奈米粒子之發光二極體封裝體之背光單元,以於縮減背光單元內之導光板時維持光量、基於增加照射到導光板之效率(光入射效率)之目的而控制照射至發光二極體封裝體內之導光板之發散角(出光的程度)、以及藉由增進光效率而表現出高背光單元亮度。 In view of the above description, the present disclosure is directed to providing a backlight unit including a light-emitting diode package in which rare earth metal oxide nanoparticles are added, in order to reduce the amount of light when the light guide plate in the backlight unit is reduced, and to increase the efficiency of irradiation to the light guide plate. For the purpose of (light incident efficiency), the divergence angle (degree of light emission) of the light guide plate irradiated into the light emitting diode package body and the high backlight unit brightness are exhibited by enhancing light efficiency.

本揭露之一實施例提供了一種包含添加稀土金屬氧化物奈米粒子之發光二極體封裝體之背光單元。 One embodiment of the present disclosure provides a backlight unit including a light emitting diode package in which rare earth metal oxide nanoparticles are added.

依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之發光二極體封裝體係由以下製程所製備:包括於一導線架上應用一黏著劑之一第一步驟製程;設置單一發光二極體晶片至導線架上之一第二步驟製程;使用如金線之導線架與 發光二極體晶片之間電性聯結用之一銲線連結導線架與發光二極體晶片之一第三製程步驟;以及使用添加稀土金屬氧化物奈米粒子之一封裝材料覆蓋導線架、發光二極體晶片、與銲線之一第四製程步驟,以保護發光二極體晶片與銲線並控制發散角(angle of beam spread)。 According to another embodiment of the present disclosure, a light emitting diode package system for adding rare earth metal oxide nano particles is prepared by the following process: including applying a first step of an adhesive on a lead frame; setting a single light a second step process from the diode chip to the lead frame; using a lead frame such as a gold wire a third process step of electrically connecting the light-emitting diode wafers with one of the bonding wires to the lead frame and the light-emitting diode chip; and covering the lead frame with a packaging material of the rare earth metal oxide nano particles A fourth process step of the diode wafer and the bonding wire to protect the LED wafer and the bonding wire and control the angle of beam spread.

依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之封裝材料係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至如環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一樹脂中而製備。 According to another embodiment of the present disclosure, the encapsulating material of the rare earth metal oxide nanoparticle is added by adding particles obtained by thermally decomposing the rare earth metal salt and the organic material to, for example, an epoxy resin or a gum base resin. Prepared by forming a resin in one of the light emitting diode encapsulating layers.

依據本揭露,稀土金屬氧化物奈米粒子具有介於1.5n2.5之範圍內之一折射率,並具有介於10奈米至1微米之範圍內之粒子尺寸。 According to the disclosure, the rare earth metal oxide nano particles have a n A refractive index within the range of 2.5 and having a particle size ranging from 10 nanometers to 1 micrometer.

100‧‧‧發光二極體封裝體 100‧‧‧Light Emitter Package

110‧‧‧基板 110‧‧‧Substrate

120‧‧‧導線架 120‧‧‧ lead frame

130‧‧‧發光二極體晶片 130‧‧‧Light Diode Wafer

140‧‧‧銲線 140‧‧‧welding line

150‧‧‧反射物 150‧‧‧Refl

210‧‧‧封裝材料 210‧‧‧Packaging materials

220‧‧‧稀土金屬氧化物粒子 220‧‧‧Rare Earth Metal Oxide Particles

300‧‧‧發光二極體條狀物 300‧‧‧Lighting diode strips

310‧‧‧印刷電路板(PCB) 310‧‧‧Printed circuit board (PCB)

400‧‧‧背光單元 400‧‧‧Backlight unit

410‧‧‧底蓋 410‧‧‧ bottom cover

420‧‧‧反光板 420‧‧‧reflector

430‧‧‧導光板 430‧‧‧Light guide

440‧‧‧數個光學片 440‧‧‧Several optical films

450‧‧‧頂蓋 450‧‧‧Top cover

本揭露之標的與特性將藉由配合以下實施例描述及以下圖式而清楚顯示,其中:第1圖為依據本揭露之添加至發光二極體封裝體之球狀稀土金屬氧化物奈米粒子之掃描式電子顯微鏡照片;第2圖為依據本揭露之使用球狀稀土金屬氧化物奈米粒子之一種發光二極體封裝體之結構;第3圖顯示了藉由使用第2圖所示之發光二極體封裝體控制發散角(angle of beam spread)之發光二極體條結構;以及第4圖繪示了配置有第3圖之發光二極體條之背光單元的結構。 The subject matter and characteristics of the present disclosure will be clearly shown by the following description of the embodiments and the following figures, wherein: FIG. 1 is a spherical rare earth metal oxide nanoparticle added to a light emitting diode package according to the present disclosure. Scanning electron micrograph; FIG. 2 is a structure of a light emitting diode package using spherical rare earth metal oxide nanoparticles according to the present disclosure; FIG. 3 is a view showing the use of FIG. The light emitting diode package controls the light emitting diode strip structure of the angle of beam spread; and FIG. 4 shows the structure of the backlight unit in which the light emitting diode strip of FIG. 3 is disposed.

於下文中,本揭露將以實施例方式詳細解說,然而以下實施例或範例僅為解說之用,而非用以限定本揭露之範疇。 In the following, the disclosure will be explained in detail by way of example, but the following examples or examples are merely illustrative and not intended to limit the scope of the disclosure.

依據本揭露之一實施例,背光單元係藉由包括如第1圖所示之添加稀土金屬氧化物奈米粒子之發光二極體封裝體而製備。 According to an embodiment of the present disclosure, a backlight unit is prepared by a light emitting diode package including rare earth metal oxide nanoparticles as shown in FIG.

依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子之發光二極體封裝體(100)係使用包括:如第2圖所示之於陶瓷基板(110)之一導線架(120)上應用一黏著劑之一第一步驟製程;安裝單一發光二極體晶片(130)至導線架(120)上之一第二步驟製程;使用如金線之導線架(120)與發光二極體晶片(130)之間電性聯結用之一銲線(140)連結導線架(120)與發光二極體晶片(130)之一第三製程步驟;以及使用添加稀土金屬氧化物奈米粒子(220)之一封裝材料(210)覆蓋該導線架(120)、發光二極體晶片(130)與銲線(140)之一第四製程步驟,以保護發光二極體晶片(130)與銲線(140)並控制發散角(angle of beam spread)之製程所製造。 According to another embodiment of the present disclosure, a rare earth metal oxide nanoparticle-added LED package (100) is used as follows: a lead frame (120) of a ceramic substrate (110) as shown in FIG. a first step process for applying an adhesive; a second step of mounting a single light-emitting diode chip (130) to the lead frame (120); using a lead frame (120) such as a gold wire and a light emitting diode Electrical connection between the polar body wafers (130) is performed by one of the bonding wires (140) connecting the lead frame (120) and the light emitting diode chip (130) to a third process step; and using the rare earth metal oxide nanometer One of the particles (220) encapsulating material (210) covers the lead frame (120), the LED chip (130) and the bonding wire (140), and a fourth process step to protect the LED chip (130) It is manufactured by a process of bonding wires (140) and controlling an angle of beam spread.

依據本揭露之另一實施例,添加稀土金屬氧化物奈米粒子(220)之封裝材料(210)係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至如環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一聚合物樹脂而製備。可選擇自苯酚基樹脂、壓克力基樹脂、聚苯乙烯樹脂、聚胺酯樹脂、苯代三聚氰銨樹脂與環氧基樹脂與矽膠基樹脂中之一型或多 型作為聚合物樹脂。 According to another embodiment of the present disclosure, the encapsulating material (210) to which the rare earth metal oxide nanoparticles (220) is added is obtained by adding particles obtained by thermally decomposing rare earth metal salts and organic materials to, for example, an epoxy resin. Or a silicone resin can be prepared by forming a polymer resin of one of the light emitting diode encapsulating layers. Can be selected from phenol-based resin, acrylic-based resin, polystyrene resin, polyurethane resin, benzoguanamine resin and epoxy resin and silicone resin. Type as a polymer resin.

依據本揭露之稀土金屬氧化物奈米粒子如下所示:[化學式1]:Ma(OH)b(CO3)cOd The rare earth metal oxide nanoparticles according to the present disclosure are as follows: [Chemical Formula 1]: M a (OH) b (CO 3 ) c O d

其中M為鈧、釔、鑭、鋁、鎦、鎵、鋅、釩、鋯、鈣、鍶、鋇、錫、錳、鉍、或錒,而a為1或2、b為0至2、c為0至3、及d為0至3。 Wherein M is lanthanum, cerium, lanthanum, aluminum, lanthanum, gallium, zinc, vanadium, zirconium, calcium, lanthanum, cerium, tin, manganese, lanthanum, or cerium, and a is 1 or 2, b is 0 to 2, c It is 0 to 3, and d is 0 to 3.

然而b與c不同時為零。 However, b and c are not zero at the same time.

依據本揭露,稀土金屬氧化物奈米粒子包括至少一或多個稀土金屬,而粒子較佳地具有1.5n2.5之範圍內之一折射率,而粒子之尺寸較佳地設定為介於10奈米至1微米之範圍內。 According to the present disclosure, the rare earth metal oxide nanoparticles comprise at least one or more rare earth metals, and the particles preferably have 1.5 n One of the refractive indices in the range of 2.5, and the size of the particles is preferably set in the range of 10 nm to 1 μm.

關於稀土金屬氧化物奈米粒子之含量,其含量較佳地約為相較於全部封裝材料之2重量百分率至20重量百分率。由於於包含添加稀土金屬氧化物之發光二極體封裝體之背光單元中,以下實施例與比較實施例內之發光二極體藍色晶片、發散角的X方向與Y方向光之相對速度(流明)及相對背光單元亮度為顯著劣化的,故上述含量範圍以外的稀土金屬氧化物並非優選的。 With respect to the content of the rare earth metal oxide nanoparticles, the content is preferably about 2% by weight to 20% by weight based on the total of the encapsulating material. In the backlight unit including the light-emitting diode package to which the rare earth metal oxide is added, the relative speeds of the X-direction and Y-direction light of the divergence angle of the light-emitting diode blue wafer in the following embodiments and comparative examples ( The lumens and the relative backlight unit luminance are significantly deteriorated, so rare earth metal oxides other than the above content range are not preferable.

本揭露之另一實施例中,藉由沉浸(immersing)鹼金屬鹽、二價金屬鹽或其組合與所需之稀土金屬鹽而準備粉末。 In another embodiment of the present disclosure, the powder is prepared by immersing an alkali metal salt, a divalent metal salt, or a combination thereof with a desired rare earth metal salt.

於化學式1之稀土金屬氧化物奈米粒子內,此些粒子之折射率較佳地為1.5n2.5,而當折射率係低於1.5或高於 2.5時,可能無法得到增加光汲出效率的效果。其係由於常用之矽膠封裝材料具有約為1.5之折射率的事實,而氮化鎵晶片具有約為2.4之折射率。此外,粒子之尺寸較佳地設定為介於10奈米至1微米之範圍。然而,當粒子尺寸位於前述範圍以外時,可能會減少光汲出效率。此外,雖然會依照波長或粒子類型而有些不同,呈現了依照粒子尺寸之光汲出效率之最佳範圍,且因此粒子尺寸的範圍可為關於光汲出效率之非常重要條件。可以參照下述之實施例與測試實施例而理解關於其之更多描述。 In the rare earth metal oxide nanoparticles of Chemical Formula 1, the refractive index of such particles is preferably 1.5. n 2.5, and when the refractive index is lower than 1.5 or higher than 2.5, the effect of increasing the light extraction efficiency may not be obtained. This is due to the fact that conventional tantalum encapsulating materials have a refractive index of about 1.5, while gallium nitride wafers have a refractive index of about 2.4. Further, the size of the particles is preferably set to be in the range of 10 nm to 1 μm. However, when the particle size is outside the foregoing range, the light extraction efficiency may be reduced. Further, although it may vary somewhat depending on the wavelength or particle type, an optimum range of light extraction efficiency according to particle size is exhibited, and thus the range of particle size may be a very important condition regarding light extraction efficiency. Further description thereof can be understood by referring to the following examples and test examples.

依據本揭露之一實施例,第3圖繪示了控制發散角之一發光二極體條(300),而此發光二極體條包括了一印刷電路板(下稱PCB,310)以及安裝於上表面作為發光二極體光源之數個發光二極體封裝體(100)。依據第3圖,發光二極體封裝體(100)繪示為位於印刷電路板的上表面上依照發光面向上之型態而安裝,但當於需要時也可安裝在側面上。 According to an embodiment of the present disclosure, FIG. 3 illustrates a light-emitting diode strip (300) that controls a divergence angle, and the light-emitting diode strip includes a printed circuit board (hereinafter referred to as PCB, 310) and is mounted. The plurality of light emitting diode packages (100) are used as the light emitting diode source on the upper surface. According to Fig. 3, the LED package (100) is shown mounted on the upper surface of the printed circuit board in accordance with the shape of the light-emitting surface, but may be mounted on the side when needed.

如第4圖所示,繪示了配備有控制發散角之發光二極體條之背光單元之一結構。依據第4圖,本揭露內使用的背光單元繪示為如側光型之背光單元,並包括了一導光板(430)與位於導光板(430)之側邊上之一發光二極體條(300)。於第4圖中,發光二極體條僅提供於導光板(430)之一側面上,然而,於需要時,發光二極體條可提供於兩個側面之上。於導光板(430)之底部,可更提供有底蓋或模塑框件(410)及為光學性附加材料之反射板或片(420)。於本實施例中所採用之發光二極體條可理解為具有與第3圖之發光二極體條(300)之相似結構。換句話 說,發光二極體條(300)包括印刷電路板(310)與安裝於板的頂面上的數個發光二極體光源,並使用了前述之發光二極體封裝體(100)作為發光二極體光源。 As shown in Fig. 4, a structure of a backlight unit equipped with a light-emitting diode strip for controlling a divergence angle is shown. According to FIG. 4, the backlight unit used in the present disclosure is illustrated as a sidelight type backlight unit, and includes a light guide plate (430) and one of the light emitting diode strips on the side of the light guide plate (430). (300). In Fig. 4, the light emitting diode strips are provided only on one side of the light guide plate (430), however, the light emitting diode strips may be provided on both sides as needed. At the bottom of the light guide plate (430), a bottom cover or molded frame member (410) and a reflective plate or sheet (420) which is an optical additional material may be further provided. The light-emitting diode strip used in the present embodiment can be understood to have a similar structure to the light-emitting diode strip (300) of FIG. In other words The LED strip (300) includes a printed circuit board (310) and a plurality of light emitting diode light sources mounted on the top surface of the board, and uses the foregoing LED package (100) as a light source. Diode source.

於導光板(430)之上,形成有數個光學片或擴散與稜鏡片(440)以及頂蓋或保護片(450)。換句話說,於背光單元內之確切發光的物體為例如螢光燈之冷陰極螢光(CCFL),而當光線自燈具發出時,藉由反射逃脫至底部之光線而降低光線損失之反射板或片(420)係設置於下方層,並位於燈具的上方層上,依照螢幕尺寸而接收出射光並均勻地分佈光線至整個區域之導光板(430)位於其上層,藉由再次散射自導光板(430)表面逃脫之光線而均勻地擴散光線至導光板(430)之整個表面之數個光學片或擴散片(440)係設置於其上方層上。如前述之依照面板尺寸均勻地擴散的光線成為清楚亮度之光線,同時穿透光學片或稜鏡片(440)。當模塑框件連結於為用於操作安裝於依照上下顛倒方式上下顛倒地堆疊光學構件之背光單元上燈具之驅動器之逆變器(inverter)時,便完成了此背光單元。 Above the light guide plate (430), a plurality of optical sheets or diffusion and fins (440) and a top cover or protective sheet (450) are formed. In other words, the object that emits exactly in the backlight unit is, for example, a cold cathode fluorescent lamp (CCFL) of a fluorescent lamp, and a reflecting plate that reduces light loss by reflecting light that escapes to the bottom when the light is emitted from the lamp. Or a sheet (420) is disposed on the lower layer and located on the upper layer of the luminaire, and the light guide plate (430) that receives the light and uniformly distributes the light to the entire area according to the screen size is located on the upper layer thereof, and is again scattered by self-guided A plurality of optical sheets or diffusion sheets (440) that uniformly diffuse light to the entire surface of the light guide plate (430) on the surface of the light plate (430) are disposed on the upper layer thereof. The light uniformly diffused according to the panel size as described above becomes a light of clear brightness while penetrating the optical sheet or the cymbal (440). The backlight unit is completed when the molded frame member is coupled to an inverter for operating a driver mounted on the backlight unit of the backlight unit stacked upside down in an upside down manner.

於下文中,本揭露將參考實施例進行描述,然而,此些實施例係描述本發明之用,並非以此些實施例限制本發明。 In the following, the disclosure will be described with reference to the embodiments, however, these embodiments are intended to illustrate the invention, and are not intended to limit the invention.

實施例 Example

實施例1: Example 1:

於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至 5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(98重量百分率之矽膠基樹脂:2重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。 After dissolving 2 g of Yttrium nitrate hydrate and 40 g of urea in 100 ml of distilled water, it was mixed for 30 minutes and thoroughly stirred. After stirring, the pH was adjusted to 5.5-5.6 by means of a base of nitric acid and ammonium hydroxide. After heating and stirring the mixture at 90 ° C for 1 hour, the mixture was filtered and washed three times with distilled water. The washed Y(OH)CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare Y(OH)CO 3 particles having a size of 500 nm. After adding Y(OH)CO 3 particles (98% by weight of crepe-based resin: 2% by weight of Y(OH)CO 3 ) to the phthalocyanine-based resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) The obtained mixture was homogenized by placing it in a homogenizer to prepare a package composition.

實施例2: Example 2:

於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(96重量百分率之矽膠基樹脂:4重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。 After dissolving 2 g of Yttrium nitrate hydrate and 40 g of urea in 100 ml of distilled water, it was mixed for 30 minutes and thoroughly stirred. After stirring, the pH was adjusted to 5.5-5.6 by means of a base of nitric acid and ammonium hydroxide. After heating and stirring the mixture at 90 ° C for 1 hour, the mixture was filtered and washed three times with distilled water. The washed Y(OH)CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare Y(OH)CO 3 particles having a size of 500 nm. After adding Y(OH)CO 3 particles (96% by weight of crepe-based resin: 4% by weight of Y(OH)CO 3 ) to the phthalocyanine-based resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) The obtained mixture was homogenized by placing it in a homogenizer to prepare a package composition.

實施例3: Example 3:

於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於 70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(95重量百分率之矽膠基樹脂:5重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。 After dissolving 2 g of Yttrium nitrate hydrate and 40 g of urea in 100 ml of distilled water, it was mixed for 30 minutes and thoroughly stirred. After stirring, the pH was adjusted to 5.5-5.6 by means of a base of nitric acid and ammonium hydroxide. After heating and stirring the mixture at 90 ° C for 1 hour, the mixture was filtered and washed three times with distilled water. The washed Y(OH)CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare Y(OH)CO 3 particles having a size of 500 nm. After adding Y(OH)CO 3 particles (95% by weight of phthalocyanine resin: 5 weight percent of Y(OH)CO 3 ) to the phthalocyanine-based resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) The obtained mixture was homogenized by placing it in a homogenizer to prepare a package composition.

實施例4: Example 4:

於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(90重量百分率之矽膠基樹脂:10重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。 After dissolving 2 g of Yttrium nitrate hydrate and 40 g of urea in 100 ml of distilled water, it was mixed for 30 minutes and thoroughly stirred. After stirring, the pH was adjusted to 5.5-5.6 by means of a base of nitric acid and ammonium hydroxide. After heating and stirring the mixture at 90 ° C for 1 hour, the mixture was filtered and washed three times with distilled water. The washed Y(OH)CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare Y(OH)CO 3 particles having a size of 500 nm. After adding Y(OH)CO 3 particles (90% by weight of crepe-based resin: 10% by weight of Y(OH)CO 3 ) to the phthalocyanine-based resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) The obtained mixture was homogenized by placing it in a homogenizer to prepare a package composition.

實施例5: Example 5:

於100毫升的蒸餾水中溶解2克的硝酸釔水合物(Yttrium nitrate hydrate)與40克的尿素之後,接著將其混合30分鐘而充分攪拌。於攪拌後,藉由硝酸與氫氧化銨之鹼調整pH至5.5-5.6。於90℃下加熱並攪拌此混合液1小時之後,過濾此混合液,並使用蒸餾水清洗三次。經過清洗之Y(OH)CO3粒子於70℃烤箱中乾燥3小時以製備具有500奈米之尺寸之Y(OH)CO3粒子。於矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)內添加Y(OH)CO3粒子(80重量百分率之矽膠基樹脂:20重量百分率之Y(OH)CO3)內之後,藉由將所得到的混合液置於一均質機內而均質化,以製備一封裝組成物。 After dissolving 2 g of Yttrium nitrate hydrate and 40 g of urea in 100 ml of distilled water, it was mixed for 30 minutes and thoroughly stirred. After stirring, the pH was adjusted to 5.5-5.6 by means of a base of nitric acid and ammonium hydroxide. After heating and stirring the mixture at 90 ° C for 1 hour, the mixture was filtered and washed three times with distilled water. The washed Y(OH)CO 3 particles were dried in an oven at 70 ° C for 3 hours to prepare Y(OH)CO 3 particles having a size of 500 nm. After adding Y(OH)CO 3 particles (80% by weight of crepe-based resin: 20% by weight of Y(OH)CO 3 ) to the phthalocyanine-based resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) The obtained mixture was homogenized by placing it in a homogenizer to prepare a package composition.

比較實施例 Comparative example

如實驗例1般製備一封裝組成物,除了沒有添加稀土金屬氧化物奈米粒子而將矽膠基樹脂(依照1:2之比例混合之OE 6631A與OE 6631B)置於一均質機內而均質化。 A package composition was prepared as in Experimental Example 1, except that the rare earth metal oxide nanoparticles were not added, and the silicone resin (OE 6631A and OE 6631B mixed in a ratio of 1:2) was placed in a homogenizer to be homogenized. .

放置實施例1-5及比較實施例之封裝組成物於具有藍光發光二極體(波長為450奈米)晶片之發光二極體封裝體內,並量測亮度。於使用之發光二極體封裝體中,藉由晶片接合使發光二極體晶片連結於導線架作為一發光源。發光二極體晶片以及導線架係透過金屬銲線接合而電性連結,並接著用為透明封裝材料且包括分散於其內之無機奈米粒子之包含矽膠樹脂之封裝體進行模塑。於以下表1中顯示了本發明中於包括發光二極體封裝體之背光單元內依照全部封裝材料之0%、2%、4%、5%、10%與20%而添加此500奈米稀土金屬氧化物奈米粒子後,藍光發光二極體晶片、X方向與Y方向的發散角、光的相對速度(流明)及相關的背光單元的亮度的量測結果。 The package compositions of Examples 1-5 and Comparative Examples were placed in a light-emitting diode package having a blue light-emitting diode (wavelength of 450 nm) wafer, and the brightness was measured. In the light-emitting diode package used, the light-emitting diode chip is bonded to the lead frame as a light-emitting source by wafer bonding. The light-emitting diode wafer and the lead frame are electrically joined by metal wire bonding, and then molded by a package containing a silicone resin which is a transparent packaging material and includes inorganic nano particles dispersed therein. It is shown in Table 1 below that the present invention adds the 500 nm to 0%, 2%, 4%, 5%, 10% and 20% of the total packaging material in the backlight unit including the light emitting diode package. The measurement result of the blue light-emitting diode wafer, the divergence angle in the X direction and the Y direction, the relative speed of light (lumen), and the brightness of the associated backlight unit after the rare earth metal oxide nanoparticle.

包括本揭露之包含稀土金屬氧化物球狀粒子之發光二極體封裝體之背光單元可以控制發散角,且可預期光入射強度的增加。 The backlight unit including the light-emitting diode package including the rare earth metal oxide spherical particles of the present disclosure can control the divergence angle, and an increase in the light incident intensity can be expected.

換句話說,發散角可藉由塗佈稀土金屬氧化物球型粒子而得到,而光入射效率為來自導光板之光線相較於來自發光二極體條之光線的相對值,且通常照射至位於發光二極體條內導光板之光線具有非100%的數值。此係由於LED條與導光板之間的間隙、折射率的差異、至導光板的入射光的發散角的角度差異或類似情形。可以確認的是,於本揭露中藉由發散角自120度至110度而減少10度,光入射效率增加約1%。 In other words, the divergence angle can be obtained by coating the rare earth metal oxide spherical particles, and the light incidence efficiency is the relative value of the light from the light guide plate compared to the light from the light emitting diode strip, and is usually irradiated to The light rays located in the light guide plate of the light-emitting diode strip have a value other than 100%. This is due to the difference in the gap between the LED strip and the light guide plate, the difference in refractive index, the angle of divergence of the incident light to the light guide plate, or the like. It can be confirmed that in the present disclosure, the light incident efficiency is increased by about 1% by reducing the divergence angle by 10 degrees from 120 degrees to 110 degrees.

綜上所述,本揭露已參照實施例而進行解說。然而,可以理解的是本領域之通常技藝者可於不偏離申請專利範圍中之本揭露技術構想的範疇內多樣地修正與改變本揭露。 In summary, the disclosure has been explained with reference to the embodiments. However, it is to be understood that a person skilled in the art can variously modify and change the disclosure without departing from the scope of the present invention.

Claims (5)

一種背光單元,包括:一發光二極體封裝體,塗佈有一封裝材料,其中該封裝材料添加有相對於該封裝材料全部之2重量百分率至20重量百分率之10奈米至1微米之稀土金屬氧化物奈米粒子。 A backlight unit comprising: a light emitting diode package coated with a packaging material, wherein the packaging material is added with a total of 2% to 20% by weight of the rare earth metal of 10 nm to 1 μm relative to the packaging material Oxide nanoparticles. 如申請專利範圍第1項所述之背光單元,其中添加稀土金屬氧化物奈米粒子之該封裝材料係藉由添加由熱分解稀土金屬鹽類與有機材料而得到之粒子至環氧基樹脂或矽膠基樹脂之可形成一發光二極體封裝層之一樹脂而製備。 The backlight unit according to claim 1, wherein the encapsulating material of the rare earth metal oxide nanoparticle is added to the epoxy resin by adding particles obtained by thermally decomposing the rare earth metal salt and the organic material or The crepe-based resin can be prepared by forming a resin of one of the light-emitting diode encapsulating layers. 如申請專利範圍第1項所述之背光單元,其中該稀土金屬氧化物奈米粒子具有以下化學式1之組成物:[化學式1]:Ma(OH)b(CO3)cOd其中M為鈧、釔、鑭、鋁、鎦、鎵、鋅、釩、鋯、鈣、鍶、鋇、錫、錳、鉍、或錒,而a為1或2、b為0或2、c為0至3、及d為0至3,然而b與c不同時為零。 The backlight unit according to claim 1, wherein the rare earth metal oxide nanoparticle has a composition of the following Chemical Formula 1: [Chemical Formula 1]: M a (OH) b (CO 3 ) c O d wherein M Is 钪, 钇, 镧, aluminum, lanthanum, gallium, zinc, vanadium, zirconium, calcium, lanthanum, cerium, tin, manganese, lanthanum, or cerium, and a is 1 or 2, b is 0 or 2, c is 0. To 3, and d is 0 to 3, however b is not the same as c. 如申請專利範圍第1項所述之背光單元,其中該稀土金屬氧化物奈米粒子具有介於1.5n2.5之範圍內之一折射率。 The backlight unit of claim 1, wherein the rare earth metal oxide nanoparticle has a value of 1.5 n One of the refractive indices in the range of 2.5. 一種包含一發光二極體封裝體之背光單元之製造方法,其中該發光二極體封裝體係由以下製程所製備:於一導線架上應用一黏著劑之一第一步驟製程;設置單一發光二極體晶片至該導線架上之一第二步驟製程;使用一銲線電性連結該導線架與該發光二極體晶片之一第 三製程步驟;以及使用一封裝材料覆蓋該導線架、該發光二極體晶片、與該銲線之一第四製程步驟,其中該封裝材料添加相對於該封裝材料全部之2重量百分率至20重量百分率之10奈米至1微米粒子尺寸之稀土金屬氧化物奈米粒子,以保護該發光二極體晶片與該銲線並控制一發散角。 A manufacturing method of a backlight unit comprising a light-emitting diode package, wherein the light-emitting diode package system is prepared by the following process: applying a first step of an adhesive on a lead frame; setting a single light-emitting diode a second step process of the polar body wafer to the lead frame; electrically connecting the lead frame and the one of the light emitting diode chip by using a bonding wire a three-process process; and a fourth process step of covering the lead frame, the light-emitting diode wafer, and the bonding wire with a packaging material, wherein the packaging material adds 2 weight percent to 20 weights relative to the packaging material A percentage of 10 nm to 1 micron particle size rare earth metal oxide nanoparticles to protect the LED wafer from the bond wire and control a divergence angle.
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