TW201735291A - 帶有多種熱界面材料之多晶片封裝體 - Google Patents

帶有多種熱界面材料之多晶片封裝體 Download PDF

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TW201735291A
TW201735291A TW105139906A TW105139906A TW201735291A TW 201735291 A TW201735291 A TW 201735291A TW 105139906 A TW105139906 A TW 105139906A TW 105139906 A TW105139906 A TW 105139906A TW 201735291 A TW201735291 A TW 201735291A
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die
tim
heat sink
distance
particles
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TW105139906A
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TWI744262B (zh
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伯希 劉
海曼士 K. 達瓦勒斯華拉普
史雅瓦德 傑恩
小詹姆斯 C. 瑪塔耶巴斯
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英特爾公司
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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
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Abstract

一多晶片封裝體被描述具有多種熱介面材料。在一實例中，一封裝體具有一基體、一被耦合至該基體的第一半導體晶粒，一被耦合至該基體的第二半導體晶粒，一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離，一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一充填熱介面材料(TIM)，以及一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二充填TIM。

Description

帶有多種熱界面材料之多晶片封裝體
發明領域 本案說明書係有關於微電子和微機械封裝(micro-electronic and micro-mechanical packaging)的熱黏合劑(thermal adhesives)，特別是在一單一封裝體內的多種不同的黏合劑。
發明背景 在半導體封裝體(semiconductor packages)的裝配(assembly)中，滑脂(greases)、充填劑(fillers)和黏合劑被使用以將外罩(covers)和散熱座(heat sinks)附接至已完成的晶粒以及將一封裝體的不同部件彼此附接。由於一半導體晶粒隨著使用而生熱，一封裝體的不同部件(包含該晶粒)會膨脹和收縮。任何黏合劑必須容許這個膨脹和收縮。結果，滑脂和聚合物通常被使用於部件之間。另一方面，熱必須被傳導遠離該晶粒，而使得它在使用期間不會過熱。滑脂和聚合物是非常差的熱導體(heat conductors)，但大多數的熱導體不能調節(accommodate)介於該封裝體的部件之間的膨脹和收縮。
熱介面材料(thermal interface materials, TIMs)被用來將散熱器(heat spreaders)附接至一晶粒以及將散熱座附接至一封裝體。TIMS被設計用以平衡附著力(adhesion)、可撓性(flexibility)、熱導性(heat conductance)、熱安定性(thermal stability)、易用性(ease of use)和成本(cost)以及其他因素。各式各樣的不同配方已被發展以供具有不同特性的不同應用之用。
為了製造出更小和更快的電子元件(electronic devices)，具有不同型式和尺寸的晶粒被安裝於相同的封裝體之內。端視晶粒組合的特別特徵和配置而定，這些型式的封裝體可被稱之為系統級封裝體(system in a package, SiP)、多晶粒模組(multiple die module, MDM)或其他名稱。一完整多晶粒系統(whole multiple die system)可被整合至一個單一晶粒之內或者僅有相關組件可被組合，諸如一處理器(processor)與一局部記憶體(local memory)或者一影像處理器(image processor)與一照相機控制器(camera controller)。
依據本發明之一實施例，係特地提出一種半導體封裝體，其包括：一基體；一被耦合至該基體的第一半導體晶粒；一被耦合至該基體的第二半導體晶粒；一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離；一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一熱介面材料(TIM)；以及一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二TIM。
較佳實施例之詳細說明 如此處所載述的，具有不同尺寸的多晶粒可藉由使用不同配方的熱介面材料(TIM)而被容置在一個單一封裝體內。這個方法可被應用在記憶體和組構晶片(fabric chips)的封裝上積體化(on-package integration)以及具有其他型式的晶粒之其他型式的封裝體。
作為一個示範例，考慮有關於一包含位在封裝體內的記憶體晶粒之範例處理器封裝體的堆疊公差(stack up tolerance)之高變化。首先，一典型的TIM充填一特定接合線厚度(bond line thickness, BLT)以便確保該TIM可如所欲的來作用。一充填的TIM被充填以小的填料粒子(filler particles)。它會具有它可充填之一由最大填料粒子的尺寸所決定的最小BLT。封裝體的BLT是由封裝設計(package design)與製造過程(manufacturing process)來決定。一典型的BLT可為50 μm。在晶粒的尺寸上存在有一大約為±10 μm的特定誤差範圍(margin of error)，而對散熱器所需而言存在有一大約為±50 μm的誤差範圍。這些因素暗示：任何一種封裝體的TIM厚度可從大約50 µm變化至大約170 μm。但是，由於不同設計所致的晶粒厚度之差異，TIM可能具有一為550 μm的BLT以便確保介於晶粒和散熱器之間的良好熱耦合。
圖1是一個封裝體之一橫截面側視圖，其中有兩個不同型式的晶粒被並排地安裝。該主要的或系統封裝體具有一個單一系統封裝體基體102係由矽、陶瓷、FR-4 (一種銅箔基板的型式)、積累層(build-up layers)或各式各樣的其它材料之任一者所製成。兩個不同的內部封裝體104、106透過被焊接至基體的連接盤(lands)或墊(pads)而被附接至該系統封裝體基體。
一個第一較大的內部封裝體104具有一晶粒110被安裝至一被焊接至該系統封裝體基體102的中介層(interposer) 112。一底部填充劑(underfill) 114保護介於該中介層和該基體之間的連接。端視特殊的執行而定，該等內部封裝體可亦包含被動元件(passives)以及其他組件。在所例示說明的示範例之中，該較大的晶粒110可為一處理器、大容量儲存器(mass storage)或某個另外的複合型晶粒(complex die)。
一個第二較小的內部封裝體106被附接至該系統封裝體基體102且位在該較大的封裝體104的旁邊。該較小的內部封裝體亦具有一晶粒122位在一中介層124之上。這個封裝體被覆蓋於一模塑化合物(mold compound) 126之內並且使用一焊球陣列或網格(solder ball array or grid)而亦被附接至該系統基體102。在這個示範例中，該較小的封裝體可以是一共處理器(co-processor)、一介面模組(interface module)、一局部記憶體或一無線電系統(radio system)。
端視執行而定，不同的內部封裝體可於該系統封裝體之內被使用，而不同型式的內部封裝體可被封裝俾以適合不同的系統。該等內部封裝體各自可包含一個以上的晶粒。在一具體例中，該較大的內部封裝體係供一中央處理單元(Central Processing Unit, CPU)晶粒之用。附加的內部封裝體係供記憶體晶粒之用。可能存在有多個記憶體晶粒，諸如4個或更多的晶粒，它們可被一起、成群組地或獨立地封裝。在另一個具體例中，該第二晶粒可為一個通信晶粒(communication die)，諸如一經由有線或無線連線(wired or wireless links)的外部介面(external interface)。該一供外部組件之用的通信晶粒可與該等記憶體晶粒以及該CPU位於相同的系統封裝體之內。在這些示範例中，存在有2個或3個不同型式的晶粒，然而，可能還存在有更多的晶粒以及更多的不同型式位在一個系統封裝體之內。
中介層的型式可適用於配合不同的情景。任擇地，該等封裝體可使用一重新佈線層(redistribution layer)、積累層，或該等晶粒可被直接地附接至該系統封裝體基體102。該等封裝體可以或可以不被囊封(encapsulated)或包覆模製(over-molded)。附加的封裝體和被動組件(passive components)可被加入以便配合不同型式的系統。
該系統封裝體被覆蓋以一作為一散熱座或散熱器的外罩130。為了將熱傳導遠離晶粒110、122這兩者，在該外罩被附接之前，一熱介面材料116、128被分別地施用於各個晶粒。該熱介面材料(TIM)是熱傳導性的以便將熱從該等晶粒傳導至該散熱器。該熱介面材料亦可以當作一黏合劑以便將該散熱器固定在適當位置以及穩固介於該二部件之間的熱傳導耦合(heat conduction coupling)。該散熱器亦可被直接地附接至該系統封裝體基體102以便將它固定在該等晶粒之上的適當位置。在這個示範例中，該散熱器係沿著該散熱器和該基體的周邊而被膠合(cemented)至該系統封裝體基體。
如所示該散熱器的厚度係跨越該系統封裝體基體的寬度來變化。該外罩在較大內部晶粒的上方係離該基體較高遠，而在較小內部晶粒處係離該基體較低近。以此方式，該外這罩容置位於該系統封裝體之內的各種不同尺寸的組件並且對於該TIM容許一更小的接合線厚度。該散熱座或散熱器可由各式各樣的不同熱傳導性材料(包含銅以及其他金屬)之任一者所製成。端視特殊的執行而定，一更大的散熱座(未示出)可被附接於該散熱器之上，諸如散熱翼片(heat fins)、熱導管(heat pipes)或一液體冷卻與散熱器系統(liquid cooling and radiator system)。
圖2是圖1之一部分被放大以顯示細節的橫截面側視圖。圖3是圖1的相同部分之一橫截面側視圖以顯示一個當中位在一較小封裝體之上的TIM 127係較厚的變化。在圖3中，一晶粒121亦被安裝至一位在該封裝體的右側上的中介層123。該中介層被覆蓋於一曝露出該晶粒121的頂端表面的模塑化合物或密封劑(encapsulant) 125之內。比較圖2和圖3，圖2之中的TIM 128比圖3之中的TIM 127要更薄。
晶粒高度的差異可能係由生產變化(production variations)或不同的製造方法所導致。位在大型以及小型晶粒兩者之內的各個組件具有某種製造變化。晶粒厚度、中介層厚度以及焊料接頭(solder joint)厚度可隨封裝體而異。位在各個內部封裝體之內的更多組件以及更多的層通常會造成高度上的更大變化。如果這些晶粒的任一者是一堆疊的多晶片封裝體(stacked multiple chip package)，那麼可能會存在有甚至更多的變化。在某些具體例中，相同的較大封裝體可與不同的較小封裝體一起被封裝。該等不同的較小封裝體可由不同的製造商來提供或可提供不同的容量[諸如不同數量的存儲(different amounts of memory)]或不同的功能(諸如一無線電與一影像共處理器)。藉由在相同的系統封裝體之內使用不同的較小封裝體，不同的應用可以利用相同的形狀因數(form factor)來提供。這可簡化系統整合(system integration)。
圖2和圖3顯示一個TIM可能被需要俾以利用不同的厚度來傳導熱。該TIM的厚度與一晶粒相距一封裝體基體的高度可以被稱為z-高度(z-height)，其中x和y是該封裝體基體之水平於以及穿經如這些附圖中所示的頁次之平面的維度。雖然該晶粒可在z-高度上變化，而該TIM因此可在厚度上變化，熱阻要求(thermal resistance requirements)要保持以便將熱從該等晶粒傳導至該外罩或散熱器之內。然而當一TIM的厚度被增加時，該TIM的熱阻變得更差或是增高。
作為一個示範例，該較大封裝體可具有一為±125 µm的z-高度變化，而該較小封裝體可具有一為±250 µm的z-高度變化。在不同的晶粒之間接合線厚度可從250變化至500 µm或更高。
一個TIM的熱傳導性(thermal conductivity)可藉由使用適用於不同TIM厚度的傳導性填料粒子而被控制。對於圖1之有蓋子的多晶片封裝體而言，一不同的TIM可被使用於不同的晶粒俾以調節不同的TIM厚度。在該有蓋子的多晶片封裝體之內可以使用多於一種形式的可分配TIM (dispensable TIM)。各個可分配TIM可具有一客製化的粒徑(customized particle size)以及一客製化的填料粒子負荷(customized filler particle loading)俾以滿足一封裝體內的不同晶粒之熱以及壓縮性(compressibility)需求。
一以聚合物為基礎的TIM之熱阻可主要地使用它的熱傳遞(heat transfer)經由滲透(percolation)而被測定。熱傳遞的滲透理論(percolation theory)是：熱主要經由顆粒鏈(chains of particles)而被傳導通經一顆粒基質(particulate matrix)。一較大的粒徑會藉由兩種機制來幫助減低熱阻。首先，熱阻係藉由減低粒子之間的介面之數目而被減低。其次，熱阻係藉由增加該等粒子在基質內的容積負荷(volumetric loading)而被減低。另一方面，較大的粒子提高該TIM的最小有效厚度(minimum effective thickness)。換言之，一具有較大粒子的TIM具有一大的最小接合線厚度(BLT)。該BLT和粒徑係根據所意欲的應用而被平衡。
多晶片封裝體(MCP)的熱考驗(thermal challenges)係使用一針對每個晶粒被最佳化的TIM而被滿足。每個晶粒的TIM BLT以及TIM熱阻標的被用來決定TIM之內的粒子分佈(particle distribution)以及最大粒徑俾以滿足熱需求(thermal demands)。壓縮性、z-高度變化以及黏合劑要求是附加的因素。比起將該等晶粒製造成有更高的公差或製造不同的封裝體外罩，這提供了一成本更低的封裝體。
圖4是一多晶片封裝體之一簡化的橫截面側視圖，其中的各個晶粒或晶粒堆疊(die stacks)具有一不同的z-高度。任擇地，該等晶粒堆疊之一個或多個可為一如圖1中所示的內部封裝體。該封裝體具有一基體202以及一散熱器204利用一密封膠(sealant) 206而被附接至該基體。存在有3個晶粒210、214、218。該等晶粒被直接地附接至該基體，雖然可如圖1之內存在有中介層、附加的晶粒或位於一晶粒和一基質之間的其他組件。一個單一TIM 212被分配至各個晶粒之上且位於各個晶粒的頂端和該散熱器之間。該TIM的厚度適用於配合各個晶粒的不同z-高度。如所示的，該TIM包含填料粒子，諸如鋁或其他金屬。
全部3個晶粒係利用一個單一選擇的可分配TIM來組裝，該TIM在此例中係就中央晶粒堆疊214而被最佳化。但是，另外的晶粒堆疊210、218由於較大的BLT而蒙受較高的阻力。如果該TIM相對地已就另外的晶粒堆疊210、218而被最佳化，那麼它可能不會具有中央晶粒堆疊214所需要的壓縮性和BLT。如果一平均或中間類型的TIM被使用，那麼各個晶粒對於該散熱器將具有比最佳可能為低的熱傳導性。
圖5是一具有3個晶粒堆疊的多晶片封裝體之一類似的簡化橫截面側視圖，各個晶粒堆疊使用一針對每個晶粒的最佳熱性能(thermal performance)而被最佳化之不同的可分配TIM。如圖4內的，存在有一個封裝體基質232具有一使用一周邊密封膠236而被附接的外罩234。3個不相同的晶粒或晶粒堆疊240、244、248被附接至該基體，各個具有一不同的z-高度以及一介於個別的晶粒的頂端和該散熱器的內部接觸面(interior facing surface)之間的不同距離。
對於各個晶粒而言，分別地存在有一不同的TIM配方242、246、250。如所示的，填料粒子的尺寸以及尺寸的混合對於各個晶粒而言是不相同的。該等不同的配方可就各個晶粒z-高度以及散熱器距離的特殊需要而被獨立地分配和適用。結果，對於該等晶粒之中的兩個而言，熱阻被改善。如果一個MCP之內的兩個晶粒或內部封裝體的維度和高度變是相同的，那麼相同的TIM可被使用。積體電路封裝體600可包含數個焊球618被附接至基體612之一底部表面620。該等焊球618可被回焊俾以將該積體電路封裝體600附接至一印刷電路板(未示出)。該基體612可含有路由跡線、表面焊墊、電源/接地平面以及通孔等等，它們利用焊料凸塊616來電氣連接該等焊球618。雖然焊球618被顯示以及描述，各式各樣的其他連接之任一者可被使用，包含針腳、連接盤和墊。
該等積體電路晶粒240、244、248產生熱，熱經由該散熱器或外罩234而從該積體電路封裝體被移離。在某些具體例中，這是一個整合式散熱器(integrated heat spreader, IHS)。該IHS藉由該等TIMs 242、246、250而被熱耦合至該等積體電路晶粒俾以吸收來自積體電路614的熱並將之散佈跨越該IHS的較大表面。該散熱器可包含有金屬以及金屬合金選擇性地帶有一由另一種金屬所構成的包覆層(coating)或可包含有一熱傳導性複合材料(thermally conductive composite material)。該等TIMs是介於該等積體電路晶粒和該散熱器之間俾以將這兩種組件連接在一起，吸收來自熱循環(thermal cycling)的機械應力(mechanical stress)以及傳導熱。
一個散熱座(未示出)可被附接至該散熱器俾以增強熱移除。該散熱座可為一具有數個翼片的金屬板，然而液體冷卻器(liquid coolers)、熱導管或更大的板可被使用。為了減低介於該IHS和該散熱器之間的熱阻抗(thermal impedance)，另一種或相同的熱介面材料可被施用並置放在該IHS和該散熱器之間。端視該散熱器的本質而定，其他合適的材料包含一熱油脂(thermal grease)以及一相變材料(phase change material)。增高熱介面材料的熱傳導性提升了熱流動(heat flow)的速率並容許晶粒在一較低的溫度下運作。
上面所述的封裝體僅是作為範例而被顯示。各式各樣的其他更簡單或更複雜的封裝體可被使用。於該封裝體之內可存在有更多或更少的晶粒以及更多或更少的基體[包含平移和中介層基體(translation and interposer substrates)]。該封裝體可被設計供用於或包含一插座(socket)或者被直接地附接至一主機板(system board)或其他表面。該等晶粒可為反轉的(flipped)、直立的(upright)或被置放在任何其他位置之內。雖然本案發明說明係指一半導體晶粒，一微機械的(micromechanical)或光學的晶粒可拿來替用。該晶粒可為矽、陶瓷、鈮酸鋰(lithium niobate)、砷化鎵(gallium arsenide)或其他材料或是此等的組合。雖然該散熱器被顯示有如圍繞或密封底靠著該封裝體基體的該晶粒，它可採用其他形式並且可將一部分的晶粒暴露於周遭的(ambient)或另一受控環境(controlled environment)。
要組裝如上所述的該封裝體，一具有C4連接墊(C4 pads)或其它焊接墊(solder pads)的網格被黏貼至該基體232，而該等晶粒被放置在該等焊接墊之上。組配件被通經一焊料回流熔爐(solder reflow furnace)以熔化C4連接墊並且在該等晶粒和該基體之間建立一焊料連接(solder connection)。不同的TIMs被施用至該等晶粒，並且組配件被通經一固化操作(curing operation)以固化TIM以及將該晶粒黏結至該散熱器。TIM或其他的黏合劑亦可被施用至該散熱器接觸該封裝體的地方。在某些情況下，一介電黏合劑(dielectric adhesive)可能被偏好。被完成的封裝體可接而利用焊球或一定位器(fixture)而被附接至一印刷電路板(printed circuit board)或一插座或任何其他裝置。端視特殊的執行而定，該散熱座可利用一黏合劑TIM或一機械夾具(mechanical clamp)或以各式各樣的其它方式之任一者而被附接。
就一粒子充填的TIM而言，為了要改善一TIM對於一特殊厚度的熱傳導性，粒徑以及填料負荷(filler loading)(粒子對於黏結劑的百分比)可被調整。可能還存在有某些對於不同厚度是更有效的粒子材料。如上面提及的，一較厚的TIM從一較大的填料粒子獲益。TIM的壓縮(compression)受到最大的填料粒子加上某個邊緣需要一少量的黏結劑和黏合劑的限制。
多種不同的可分配TIMs可被整合至現有的封裝體組裝製程(package assembly processes)之中。作為一個示範例，一分配器(dispenser)可以首先將TIM分配於各個左側晶粒之上，接而被再裝填以一不同的TIM並將TIM分配至各個中央晶粒之上，以及其他等等。任擇地，一種新式三頭分配器(three head dispenser)可被使用以便同時地將一不同的TIM分配至一MCP的各個晶粒之上。     表格
表格顯示3種不同變化的可分配TIMs之不同的填料負荷以及不同的熱性質(thermal properties)。如所示，從實例1至實例2和3，增大填料粒子的尺寸提供體積K之一增高。對於較大粒徑的TIM而言，填料負荷亦可能被些微地增大。但是，主要的差異在於粒徑。對於實例2和3而言，平均粒徑從12 µm被增大至40 µm。體積傳導率(bulk conductivity)(K)受此改變而被顯著地增高。如前面提及的，BLT亦藉由最大粒徑而被測定出。
熱阻係在一標準450 µm z-高度變化之下被量測。這從以一較小12 µm粒子為基礎的1.2 cm2 -K/W下降至對於一較大40 µm粒徑而言為0.8或0.9 cm2 -K/W。
熱阻的降低可至少部分地歸因於減少介面的數目。增大每個粒子的尺寸減少了為了讓熱從晶粒的表面流動至散熱器而必須被橫越的粒子的數目。每個介面提供的熱阻要比填料粒子材料(filler particle material)所做者為多。位於一個厚TIM之內的多個粒子介面因而增大了熱阻。通經相同空間的較大粒子增高了體積熱傳導性(bulk thermal conductivity)。在應用上，利用一大的TIM BLT，體積熱阻(bulk thermal resistance)構成大部分的總熱阻(total thermal resistance)。使用較大的粒徑來降低熱阻可顯著地改善至該散熱器的熱傳導。
在實例1中，粒子具有一平均尺寸＝12 µm以及一最大粒徑＝42 µm。為了提高體積熱傳導性，具有一平均粒徑＝40 µm以及一最大粒徑＝160 µm之一較大粒徑可被使用於實例2中。這給出了幾乎兩倍的體積K，如表格內所示，體積K＝7 W/mK。
為了進一步改善一具有較大粒子的TIM之粒徑，該等粒子可被過濾。對於一當中有一z-高度被調節的封裝體而言，大量的過濾可被應用俾以減小最大粒徑而同時維持平均尺寸不變或僅被些微地改變。這個針對粒徑的技術以及調整可被使用俾以維持體積K的高數值。來自該表格的實例3顯示一使用大量的過濾而被生成的最佳化大粒徑TIM。平均粒徑被些微地減小或根本沒變。體積K被些微地減小或根本沒變而為7 W/mK，而最大粒徑從160 µm被減小至120 µm。結果是，相較於實例2，在相同狀況下的熱阻被進一步減低。在此例中，使用450 µm z-高度變化，實例3的熱阻係為大約0.8 cm2 -K/W。經過濾的大粒徑TIM可以吸收要比實例2版本更多的z-高度變化，或其經改善的性能可被使用以便滿足更高的熱需求。
被選擇性地最佳化的TIMs在一單一封裝體內的使用大大地提高該封裝體冷卻位在其內部的晶粒之能力。這亦可被稱為是一較高的熱設計功率(Thermal Design Power, TDP)。這允許在更極端的環境有更高的性能。現有的晶粒可在更高的速度下操作而不改變一計算系統設計(computing system design)的任何其他方面。它亦容許更多的晶粒在一用於一較小的整體電子裝置(overall electronic device)的單一封裝體內被更緊密地附接在一起。被個別地最佳化的TIMs亦允許冷卻的成本可被降低。該散熱器可藉由消除代表不同晶粒高度的特殊空腔而被較不昂貴地製造。當熱被更有效地傳導至該散熱器時，諸如散熱翼片、風扇等等的散熱座亦可被較不昂貴地製造。
此處所描述的填料可以由鋁(aluminum)、氧化鋁(aluminum oxide)、氧化鋅(zinc oxide)、氮化鋁(aluminum nitride)和氮化硼(boron nitride)或用於一聚合物TIM (PTIM)的其它材料來形成。該充填TIM可藉由以一矽氧樹脂(silicone resin)來結合填料粒子而被製造出。該矽氧樹脂可為乙烯基矽氧烷(vinyl siloxanes)、氫化矽氧烷(hydrosilicones)和催化劑(catalyst)之一混合物。這些可以一為85-95%填料對2-15%矽氧樹脂的重量比來混合。
對於一PTIM而言，一聚合物基質(polymer matrix)可被使用俾以提供附著(adhesion)。該聚合物基質亦影響所形成的PTIM之固化模數(cured modulus)。一低模數允許被固化的基質來吸收熱機械應力(thermal mechanical stress)。一以矽氧樹脂為基礎的聚合物基質在許多應用上是一合適的材料，因為它可達到一非常低的模數(例如，低於10 MPa)。
該矽氧樹脂可以一矽氧基質為基礎，該矽氧基質可為一從矽氧樹脂交聯(crosslinked)而來的矽氧烷。用於某些具體例的某些示範例矽氧樹脂包含乙烯基矽氧烷、氫化矽氧烷和催化劑。乙烯基矽氧烷是乙烯基封端的(vinyl terminated)或乙烯基官能性(vinyl functional)矽氧烷。它們可被使用作為一矽氧基質配方的主要組份。氫化矽氧烷是帶有–Si-H官能基的矽氧烷。端視–Si-H官能基的數目而定，氫化矽氧烷鏈包含鏈伸長劑(chain extenders)[雙官能性(bi-functional)]以及交聯劑[多官能性(multi-functional)]這兩者。該催化劑可為以鉑為基礎的(通信晶片)，它可催化介於乙烯基矽氧烷和氫化矽氧烷之間的矽氫化反應(hydrosilylation reactions)，俾以達成所欲的機械性質。接著促進劑(adhesion promoters)，諸如含有環氧基的矽烷(epoxy-containing silanes)，亦被加入至該矽氧樹脂之內俾以促進晶粒和蓋子介面處的附著。
圖6是一使用所描述的多種TIMs來形成一封裝體的操作流程圖。首先，在262處，半導體晶粒被附接至一基體。該等晶粒可為在使用時會產生熱的任何型式。可存在有許多型式的晶粒或一單一型式的晶粒。亦可存在有被動電組件(passive electrical components)以及其他連接器(connectors)。該等晶粒可使用一導線(wire lead)、倒裝晶片(flip chip)、表面安裝(surface mount)或任何其他所欲的技術而被附接。不同的晶粒可以不同的方式被附接。被附接的晶粒可被置放在一焊料回流熔爐內，俾以將位在該等晶粒上的所有連接盤焊接至位在該封裝體基體上的墊。該焊料回流熔爐的熱度足以使焊料回流而不損害晶粒或基體而且係處於250℃和350℃之間的範圍內。
在264處，在該晶粒被附接之後，接著一不同的熱介面材料(TIM)被施加至各個晶粒，該各個晶粒具有一不同的z-高度或一不同的z-高度變化或一從該晶粒至該散熱器的不同距離。一特殊的TIM的選擇和製造係至少根據所期待的介於該晶粒和該散熱器之間的距離以及z-高度變化而被選擇。如此處所描述的，該TIM包含填料粒子以及一樹脂。該TIM可藉由分配(dispensing)、噴射(jet)或一膠帶(tape)而被施用。
在該TIM被施用之後，接著在266處一個散熱器在該等晶粒體的上方和該基體的上方被附接至該等熱介面材料，俾以將該散熱器熱和/或機械耦合至該晶粒。
當該散熱器位在該等晶粒的上方而且該等TIMs位於該等晶粒和該散熱器之間，該等被組合的組件在268處被加熱。該基體、該晶粒、該TIM以及該散熱器的加熱具有固化熱介面材料的作用。熱被施加直到該TIM已被固化。這可在一低於該焊料回流熔爐溫度的溫度之下被完成而且典型地係在大約150℃至160℃。實際的溫度端視粒子的型式與黏結劑的性質還有其他因素而定，而且在某些具體例中可以低至120℃以及高至250℃。
圖7圖解說明一依據本發明之一實現的計算裝置500。該計算裝置500收容一板502。該板502可含有許多組件，包含但不限於一個處理器504以及至少一個通信晶片(communication chip) 506。該處理器504被物理和電耦合至該板502。在某些實現上，該至少一個通信晶片506亦被物理和電耦合至該板502。在進一步的實現中，該通信晶片506是部分的該處理器504。
端視它的應用而定，計算裝置500可包含其他組件可被或可以不被物理和電耦合到該板502。這些其他組件包含，但不限於：依電性記憶體 [例如，動態隨機存取記憶體(DRAM)] 508，非依電性記憶體509、快閃記憶體 (未示出)、一圖形處理器512、一數位信號處理器(未示出)、一密碼處理器(未示出)、一晶片組514、一天線516、一顯示器518 [諸如一觸控螢幕顯示器]、一觸控螢幕控制器520、一電池522、一聲頻編碼解碼器(未示出)、一視訊編碼解碼器(未示出)、一功率放大器524、一全球定位系統(GPS)裝置526、一羅盤528、一加速計(未示出)、一陀螺儀(未示出)、一揚聲器530、一照相機532，以及一大量儲存器 [諸如硬碟驅動裝置] 510、光碟(CD)(未示出)、數位通用磁碟(DVD)(未示出)等等之類。這些組件可被連接至該系統板502，被安裝置該系統板，或被組合以該等其他組件之任一者。
該通信晶片506容許無線和/或有線通信以供傳輸數據至該計算裝置500或傳輸來自該計算裝置500的數據。術語“無線”以及它的衍生物可被用來描述電路、裝置、系統、方法、技術、通信通道等等，它們可經由使用通過一非固體介質之經調變的電磁輻射來傳達數據。該術語並不意味著相關聯的裝置不含有任何導線，儘管在某些具體例中它們可能不包含。該通信晶片506可執行許多有線或無線標準或協定之中的任何一種，包含但不限於：Wi-Fi (IEEE 802.11家族)、全球互通微波接取(WiMAX)(IEEE 802.16家族), IEEE 802.20、長程演進(LTE)、演進資料最佳化(Ev-DO)、高速封包接取+ (HSPA+)、高速下行封包接取+ (HSDPA+)、高速上行封包接取+ (HSUPA+)、GSM增強數據率演進(EDGE)、全球行動通信系統(GSM)、通用封包無線服務技術(GPRS)、分碼多重進接(CDMA)、分時多重進接(TDMA)、歐洲數位無線通信(DECT)、藍牙(Bluetooth)，它們的乙太網路衍生物(Ethernet derivatives)，還有任何其他被指定為3G、4G、5G以及超越的無線與有線協定。該計算裝置500可包含數個通信晶片506。舉例而言，一第一通信晶片506可專用於諸如Wi-Fi和藍牙的較短距離無線通信，而一第二通信晶片506可專用於諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO以及其他的較長距離無線通信。
該計算裝置500的該處理器504包含一個積體電路晶粒被封裝於該處理器504之內。在本發明的某些實現中，該處理器的該積體電路晶粒、記憶體元件、通信元件或其他組件包含使用此處所描述的不同TIMs而被封裝的一或多個晶粒。術語“處理器”可意指會處理來自暫存器和/或記憶體的電子數據以將該電子數據轉換成可被存儲在暫存器和/或記憶體中的其他電子數據的任一種裝置或一裝置的部分。
在各式各樣的實現中，該計算裝置500可為一膝上型電腦、一輕省筆電、一筆記型電腦、一超輕薄筆電、一智慧型手機、一平板電腦、一個人數位助理器(PDA)、一超級移動電腦、一行動電話、一桌上型電腦、一伺服器、一列印機、一掃描器、一監視器、一機上盒、一娛樂控制單元、一數位相機、一可攜式音樂播放器或一數位視訊記錄器。在進一步的實現中，該計算裝置500可為會處理數據的任何其他電子裝置。
具體例可當作一或多種記憶體晶片、控制器、中央處理單元(CPUs)、使用一母板(motherboard)被互連的微晶片或積體電路、一應用特定積體電路(ASIC)和/或一場域可程式閘陣列(FPGA)之一部分而被實施。
對“一個具體例”、“一具體例”、“示範性具體例”、“各式各樣的具體例”等等的引述表示：如此被描述的本發明之具體例可包含特殊的特徵、結構或特性，但每一個具體例未必然要包含該特殊的特徵、結構或特性。再者，某些具體例可具有一些、全部或者不具有就其他實施例而被描述的特徵。
在下面的載述以及申請專利範圍之中，術語“耦合(coupled)”連同它的衍生物可以被使用。“耦合”被用來意指兩個或更多的元件彼此合作(co-operate)或相互作用(interact)，但它們可以具有或不具有介於它們之間的中介物理或電氣組件。
除非另有指明，如申請專利範圍當中所使用的，使用序數形容詞“第一”、“第二”、“第三”等等來描述一共同元件僅僅表示：同樣元件的不同實例正被提及，而且非意欲在暗示：如此被描述的該等元素必須在時間上、在空間上、在排名上(in ranking)或以任何其他方式來呈一給定的序列。
附圖以及前面的載述提供了具體例的範例。那些熟習此項技術者將會理解到：被描述的元件之一者或多者可被適當地組合成為一個單一功能元件。任擇地，某些元件可被分拆成為多個功能元件。來自一具體例的元件可被加入至另一個具體例內。舉例而言，此處所描述的製程的順序可被改變而且不受限於此處所描述的方式。更甚者，任一流程圖的動作不需要以所顯示的順序被實現；所有的動作也不一定需要被執行。又，那些不依賴於其他動作的動作可以與其他動作被並行地執行。具體例的範圍決不受限於這些特別的示範例。許多的變化，無論有否在本案說明書內被明確地給予，諸如結構、尺寸和材料使用上的差異，是可能的。具體例的範圍是至少跟隨後的申請專利範圍內所給予者同樣地寬廣。
下面的示範例係有關於進一步的具體例。不同具體例的各式各樣特徵可被進行各種不同的組合，某些特徵被包含以及其他的被排除，俾以適應各式各樣的不同應用。某些具體例係有關於一半導體封裝體，它包含：一基體，一被耦合置該基體的第一半導體晶粒，一被耦合置該基體的第二半導體晶粒，一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離，一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一熱介面材料(TIM)，以及一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二TIM。
在進一步的具體例中，該第一和第二TIMs包含有熱傳導性粒子以及一聚合物基質。
在進一步的具體例中，該第二距離係大於該第一距離，以及該第二TIM的粒子係大於該第一TIM的粒子。
在進一步的具體例中，該第一TIM的粒子具有一為大約10 µm的平均尺寸，而該第二TIM的粒子具有一為大約40 µm的平均尺寸。
在進一步的具體例中，該第二TIM的粒子具有一平均尺寸大於該第一距離。
在進一步的具體例中，該第二TIM的粒子被過濾俾以降低最大尺寸。
在進一步的具體例中，該等粒子含有鋁。
在進一步的具體例中，該等粒子包含有鋁、氧化鋁、氮化鋁、氧化鋅和氮化硼之至少一者。
在進一步的具體例中，該第一和第二TIMs利用熱而被固化。
在進一步的具體例中，該第一和第二TIMs在一低於大約200℃的溫度下被固化。
在進一步的具體例中，該聚合物基質包含有一乙烯基矽氧烷、氫化矽氧烷和一催化劑。
進一步的具體例包含一被耦合至該基體的第三半導體晶粒以及一介於該第三晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第三晶粒的第三TIM，其中該第三晶粒至該散熱器具有一第三距離不同於該第一距離和該第二距離。
在進一步的具體例中，該第一晶粒是一處理器，而該第二晶粒是一至外部組件的通信介面(communication interface)。
某些具體例係有關於一用以形成一半導體封裝體的方法，其包括：將一第一半導體晶粒附接至一基體，將一第二半導體晶粒附接至該基體，將一第一熱介面材料(TIM)施加至該第一晶粒，將一第二TIM施加至該第二晶粒，以及在該第一和第二晶粒的上方以及該基體的上方將一散熱器附接至該第一和第二TIMs，俾以將該散熱器機械與熱耦合至該第一和第二晶粒，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離。
在進一步的具體例中，施加該第一和第二TIMs包括在該等晶粒的上方使用一膠分配器(paste dispenser)來分配該等材料。
在進一步的具體例中，該第二距離大於該第一距離，其中該第一和第二TIMs包含熱傳導性粒子以及其中該第二TIM的粒子大於該第一TIM的粒子。
進一步的具體例包含使用熱來固化該第一和第二TIMs。
某些具體例係有關於一計算系統，它包括：一板，一記憶體被連接至該板，以及一半導體封裝體被連接至該板以及經由該板被連接至該記憶體，該封裝體包含有一基體，一被耦合至該基體的第一半導體晶粒，一被耦合至該基體的第二半導體晶粒，一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離，一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一充填熱介面材料(TIM)；以及一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二充填TIM。
在進一步的具體例中，該第二距離大於該第一距離，以及該第二TIM被充填以填料粒子，它們要比填充該第一TIM的填料粒子為大。
在進一步的具體例中，該第一和第二TIMs包含有氧化鋁粒子以及一聚合物基質。
102‧‧‧系統封裝體基體
104、106‧‧‧內部封裝體
110、122、121‧‧‧晶粒
112、124、123‧‧‧中介層
114‧‧‧底部填充劑
116、128‧‧‧熱介面材料(TIM)
125‧‧‧模塑化合物、密封劑
126‧‧‧模塑化合物
127、212‧‧‧熱介面材料(TIM)
130‧‧‧外罩
202、232‧‧‧封裝體基體
204‧‧‧散熱器
206、236‧‧‧密封膠
210、214、218‧‧‧晶粒、晶粒堆疊
234‧‧‧外罩、散熱器
240、244、248‧‧‧晶粒、晶粒堆疊、積體電路晶粒
242、246、250‧‧‧TIM配方
262、264、266、268‧‧‧操作流程步驟
500‧‧‧計算裝置
502‧‧‧板、母板、系統板
504‧‧‧處理器
506‧‧‧通信晶片
508‧‧‧依電性記憶體、動態隨機存取記憶體(DRAM)
509‧‧‧非依電性記憶體、唯讀記憶體(ROM)
510‧‧‧大量儲存器、大量記憶體
512‧‧‧圖形處理器、圖形中央處理單元(CPU)
514‧‧‧晶片組
516‧‧‧天線
518‧‧‧顯示器、觸控螢幕顯示器
520‧‧‧觸控螢幕控制器
522‧‧‧電池
524‧‧‧功率放大器、放大器(AMP)
526‧‧‧全球定位系統(GPS)裝置
528‧‧‧羅盤
530‧‧‧揚聲器
532‧‧‧照相機
600‧‧‧積體電路封裝體
612‧‧‧基體
614‧‧‧積體電路
616‧‧‧焊料凸塊
618‧‧‧焊球
620‧‧‧底部表面
本發明的具體例係藉由隨文檢附的圖式之中的圖以示例而非限制的方式來做解說，其中相似的參考編號被用來表示類似的元件。
圖1是一依據一具體例的多晶片封裝體(multiple chip package)之橫截面側視圖。
圖2是依據一具體例的圖1之一部分的橫截面放大側視圖。
圖3是一如圖2所示的圖1之相同部分顯示一依據具體例之變化的橫截面放大側視圖。
圖4是一依據一具體例的多晶片封裝體(multi-chip package)之一簡化的橫截面側視圖。
圖5是一依據一具體例之另擇的多晶片封裝體之一簡化的橫截面側視圖。
圖6是一用以裝配一依據一具體例的多晶片封裝體之操作流程圖(process flow diagram)。
圖7是一結合一依據本發明之一具體例的微電子封裝體(microelectronic package)之計算裝置(computing device)的方塊圖(block diagram)。
102‧‧‧系統封裝體基體
104、106‧‧‧內部封裝體
110、122‧‧‧晶粒
112、124‧‧‧中介層
130‧‧‧外罩

Claims (20)

  1. 一種半導體封裝體，其包括： 一基體； 一被耦合至該基體的第一半導體晶粒； 一被耦合至該基體的第二半導體晶粒； 一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離； 一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一熱介面材料(TIM)；以及 一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二TIM。
  2. 如請求項1的半導體封裝體，其中該第一和該第二TIMs包含有： 熱傳導性粒子；以及 一聚合物基質。
  3. 如請求項2的半導體封裝體，其中該第二距離大於該第一距離，以及該第二TIM的粒子大於該第一TIM的粒子。
  4. 如請求項3的半導體封裝體，其中該第一TIM的粒子具有一大約為10 µm的平均尺寸，而該第二TIM的粒子具有一大約為40 µm的平均尺寸。
  5. 如請求項2的半導體封裝體，其中該第二TIM的粒子具有一平均尺寸大於該第一距離。
  6. 如請求項2的半導體封裝體，其中該第二TIM的粒子被過濾俾以降低最大尺寸。
  7. 如請求項2的半導體封裝體，其中該等粒子含有鋁。
  8. 如請求項2的半導體封裝體，其中該等粒子包含有鋁、氧化鋁、氮化鋁、氧化鋅和氮化硼之至少一者。
  9. 如請求項1的半導體封裝體，其中該第一和第二TIMs利用熱而被固化。
  10. 如請求項9的半導體封裝體，其中該第一和第二TIMs在一低於大約200℃的溫度下被固化。
  11. 如請求項2的半導體封裝體，其中該聚合物基質包含有一乙烯基矽氧烷、氫化矽氧烷和一催化劑。
  12. 如請求項1的半導體封裝體，進一步包括一被耦合至該基體的第三半導體晶粒以及一介於該第三晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第三晶粒的第三TIM，其中該第三晶粒至該散熱器具有一第三距離不同於該第一距離和該第二距離。
  13. 如請求項1的半導體封裝體，其中該第一晶粒是一處理器，而該第二晶粒是一至外部組件的通信介面。
  14. 一種用以形成一半導體封裝體的方法，其包括： 將一第一半導體晶粒附接至一基體； 將一第二半導體晶粒附接至該基體； 將一第一熱介面材料(TIM)施加至該第一晶粒； 將一第二TIM施加至該第二晶粒；以及 在該第一和第二晶粒的上方以及該基體的上方將一散熱器附接至該第一和該第二TIMs，俾以將該散熱器機械與熱耦合至該第一和該第二晶粒，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離。
  15. 如請求項14的方法，其中施加該第一和該第二TIMs包括在該等晶粒的上方使用一膠分配器來分配該等材料。
  16. 如請求項14的方法，其中該第二距離大於該第一距離，其中該第一和該第二TIMs包含熱傳導性粒子以及其中該第二TIM的粒子大於該第一TIM的粒子。
  17. 如請求項14的方法，進一步包括使用熱來固化該第一和該第二TIMs。
  18. 一種計算系統，它包括： 一板； 一記憶體被連接至該板；以及 一半導體封裝體被連接至該板以及經由該板被連接至該記憶體，該封裝體包含有：一基體，一被耦合至該基體的第一半導體晶粒，一被耦合至該基體的第二半導體晶粒，一被耦合至該晶粒的散熱器，其中該第一晶粒至該散熱器具有一第一距離以及該第二晶粒至該散熱器具有一第二距離，一介於該第一晶粒和該散熱器之間以將該散熱器機械與熱耦合至該晶粒的第一充填熱介面材料(TIM)；以及一介於該第二晶粒和該散熱器之間以將該散熱器機械與熱耦合至該第二晶粒的第二充填TIM。
  19. 如請求項18的計算系統，其中該第二距離大於該第一距離，以及該第二TIM被充填以填料粒子，其係比填充該第一TIM的填料粒子為大。
  20. 如請求項18的計算系統，其中該第一和該第二TIMs包含有氧化鋁粒子以及一聚合物基質。
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