TW201731833A - Resist composition and resist pattern formation method, and compound and acid-producing agent providing the novel compound useful for the acid-producing agent used as the resist composition, the acid-producing agent, resist composition containing the acid-producing agent, and the resist patter formation method - Google Patents

Resist composition and resist pattern formation method, and compound and acid-producing agent providing the novel compound useful for the acid-producing agent used as the resist composition, the acid-producing agent, resist composition containing the acid-producing agent, and the resist patter formation method Download PDF

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TW201731833A
TW201731833A TW105136286A TW105136286A TW201731833A TW 201731833 A TW201731833 A TW 201731833A TW 105136286 A TW105136286 A TW 105136286A TW 105136286 A TW105136286 A TW 105136286A TW 201731833 A TW201731833 A TW 201731833A
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atom
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TWI747851B (en
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Masahiro Shiosaki
Masatoshi Arai
Khanh Tin Nguyen
Yoshitaka Komuro
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Tokyo Ohka Kogyo Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The topic of the present invention is to provide the novel compound useful for the acid-producing agent used as the resist composition, the acid-producing agent using same, resist composition containing the acid-producing agent, and the resist pattern formation method using the resist composition. The solution is to contain the resist composition containing the compound represented by the general formula (b1). In formula (b1), R<SP>b1</SP> is represented by the aromatic ring containing the electron attractive group formed by selecting from the group of fluorine atom, trifluoromethyl group, nitro group, cyano group, and –SO2R<SP>b10</SP> (but when the aforementioned aromatic ring is benzene ring, the aforementioned electron attractive group is bonded to the meta-position at one side of the benzene ring.) R<SP>b21</SP> and R<SP>b22</SP> represent the aromatic ring capable of containing the electron attractive group formed by selecting from the group of fluorine atom, trifluoromethyl group, nitro group, cyano group, and –SO2R<SP>b20</SP>. Z represents sulfur atom, oxygen atom, carbonyl group, or single bond. X<SP>-</SP> represents counter anion (but, except for BF4<SP>-</SP>).

Description

阻劑組成物及阻劑圖型形成方法以及化合物及酸產生劑 Resist composition and resist pattern formation method and compound and acid generator

本發明係關於阻劑組成物及阻劑圖型形成方法、以及化合物及酸產生劑。 The present invention relates to a resist composition and a resist pattern forming method, and a compound and an acid generator.

微影技術中,例如藉由於基板之上形成由阻劑材料所構成之阻劑膜,對該阻劑膜進行選擇性的曝光,並施以顯影處理,來進行於前述阻劑膜形成特定形狀之阻劑圖型的步驟。阻劑膜之曝光部變化為溶解於顯影液的特性之阻劑材料稱為正型、阻劑膜之曝光部變化為不溶解於顯影液的特性之阻劑材料稱為負型。 In the lithography technique, for example, a resist film formed of a resist material is formed on a substrate, the resist film is selectively exposed, and a development process is performed to form a specific shape on the resist film. The step of the resist pattern. The resist material in which the exposed portion of the resist film is changed to the characteristics of the developer is referred to as a positive type, and the resist portion in which the exposed portion of the resist film is changed to be insoluble in the developer is referred to as a negative type.

近年來,於半導體元件或液晶顯示元件之製造中,由於微影技術之進步,圖型之微細化急速地進展。作為微細化之手法,一般而言係進行曝光光源之短波長化(高能量化)。具體而言,以往係使用以g線、i線為代表之紫外線,但目前係進行使用了KrF準分子雷射、或ArF準分子雷射的半導體元件之量產。又,關於較此等準分子雷射更短波長(高能量)之EUV(極紫外線)、或EB(電子束)、X射線等,亦有進行探討。 In recent years, in the manufacture of semiconductor elements or liquid crystal display elements, the miniaturization of patterns has progressed rapidly due to advances in lithography. As a method of miniaturization, generally, a short wavelength (high energy) of an exposure light source is performed. Specifically, conventionally, ultraviolet rays typified by g-line and i-line have been used, but mass production of semiconductor elements using KrF excimer lasers or ArF excimer lasers has been currently performed. Further, EUV (extreme ultraviolet ray), EB (electron beam), X-ray, etc., which are shorter wavelengths (high energy) than these excimer lasers, are also discussed.

對於阻劑材料,係要求對此等曝光光源之感度、可再現微細尺寸之圖型的解像性等之微影特性。 For the resist material, the lithography characteristics such as the sensitivity of the exposure light source and the resolution of the pattern capable of reproducing the fine size are required.

作為滿足如此要求之阻劑材料,以往,係使用含有藉由酸的作用,對顯影液之溶解性會變化之基材成分、與藉由曝光而會產生酸之酸產生劑成分的化學增幅型阻劑組成物。 As a resist material which satisfies such requirements, conventionally, a chemically amplified type containing a base material component which changes the solubility of a developer by an action of an acid and an acid generator component which generates an acid by exposure is used. Resist composition.

例如上述顯影液為鹼顯影液(鹼顯影製程)的情況時,作為正型之化學增幅型阻劑組成物,一般而言使用含有藉由酸的作用,對鹼顯影液之溶解性會增大之樹脂成分(基礎樹脂)與酸產生劑成分者。使用該阻劑組成物所形成之阻劑膜,若於阻劑圖型形成時進行選擇性的曝光,於曝光部,酸會從酸產生劑成分產生,藉由該酸之作用使基礎樹脂之極性增大,阻劑膜之曝光部對於鹼顯影液成為可溶。因此藉由進行鹼顯影,會形成阻劑膜之未曝光部作為圖型而殘留的正型圖型。 For example, when the developing solution is an alkali developing solution (alkali developing process), as a positive type chemically amplified resist composition, generally, the solubility in an alkali developing solution is increased by the action of an acid. The resin component (base resin) and the acid generator component. The resist film formed by using the resist composition is selectively exposed when the resist pattern is formed, and the acid is generated from the acid generator component in the exposed portion, and the base resin is caused by the action of the acid. The polarity is increased, and the exposed portion of the resist film becomes soluble for the alkali developer. Therefore, by performing alkali development, a positive pattern remaining as an unexposed portion of the resist film as a pattern is formed.

另一方面,將如此之化學增幅型阻劑組成物,應用於使用含有機溶劑之顯影液(有機系顯影液)的溶劑顯影製程時,基礎樹脂之極性增大,相對而言對有機系顯影液之溶解性會降低,因此阻劑膜之未曝光部藉由有機系顯影液而被溶解、去除,形成阻劑膜之曝光部作為圖型而殘留的負型阻劑圖型。如此地,有將形成負型阻劑圖型之溶劑顯影製程稱為負型顯影製程者。 On the other hand, when such a chemically amplified resist composition is applied to a solvent developing process using a developing solution containing an organic solvent (organic developing solution), the polarity of the base resin is increased, and the organic developing is relatively Since the solubility of the liquid is lowered, the unexposed portion of the resist film is dissolved and removed by the organic developing solution, and the exposed portion of the resist film is formed as a negative resist pattern remaining as a pattern. Thus, a solvent developing process for forming a negative resist pattern is referred to as a negative developing process.

化學增幅型阻劑組成物中所使用之基礎樹脂,一般而言,為了提高微影特性等,係具有複數個構成 單位。 The base resin used in the chemically amplified resist composition generally has a plurality of constituents in order to improve lithography characteristics and the like. unit.

例如,藉由酸的作用,對鹼顯影液之溶解性會增大之樹脂成分的情況時,係使用含有藉由自酸產生劑等所產生之酸的作用而分解,會增大極性之酸分解性基的構成單位,其他,係合併使用含有含內酯之環式基的構成單位、含有羥基等之極性基的構成單位等。 For example, in the case of a resin component which has an increased solubility in an alkali developer by the action of an acid, it is decomposed by an action of an acid generated by an acid generator or the like to increase the polarity of the acid. The constituent unit of the decomposable group is a constituent unit containing a cyclic group containing a lactone, a constituent unit containing a polar group such as a hydroxyl group, or the like.

又,於阻劑圖型之形成中,藉由曝光而自酸產生劑成分所產生之酸的行為乃是對微影特性造成大的影響之一要素。 Further, in the formation of the resist pattern, the behavior of the acid generated from the acid generator component by exposure is one of the factors that greatly affect the lithographic properties.

作為化學增幅型阻劑組成物中所使用之酸產生劑,至今為止有提出多種多樣者。例如,已知有錪鹽或鋶鹽等之鎓鹽系酸產生劑、肟磺酸酯系酸產生劑、重氮甲烷系酸產生劑、磺酸硝基苄酯系酸產生劑、磺酸亞胺酯系酸產生劑、二碸系酸產生劑等。 As the acid generator used in the chemical amplification resist composition, various proposals have been made so far. For example, an onium salt acid generator such as a phosphonium salt or a phosphonium salt, an oxime sulfonate acid generator, a diazomethane acid generator, a nitrobenzyl ester acid generator, or a sulfonate is known. An amine ester acid generator, a diterpene acid generator, and the like.

作為鎓鹽系酸產生劑,主要使用於陽離子部具有三苯基鋶等之鎓離子者。於鎓鹽系酸產生劑之陰離子部,一般而言,係使用烷基磺酸離子或其烷基之氫原子的一部分或全部被氟原子取代之氟化烷基磺酸離子。 The sulfonium-based acid generator is mainly used for those having a ruthenium ion such as triphenylsulfonium in the cation portion. The anion portion of the sulfonium salt-based acid generator is generally a fluorinated alkylsulfonic acid ion in which a part or all of a hydrogen atom of an alkylsulfonic acid ion or an alkyl group thereof is substituted with a fluorine atom.

又,阻劑圖型之形成中,為了實現微影特性之提高,作為鎓鹽系酸產生劑之陽離子部,亦提出有具有具備二苯并噻吩構造之鎓離子的鎓鹽系酸產生劑(例如參照專利文獻1)。 Further, in the formation of the resist pattern, in order to improve the lithographic properties, a sulfonium-based acid generator having a sulfonium ion having a dibenzothiophene structure has been proposed as a cation portion of the bismuth salt-based acid generator ( For example, refer to Patent Document 1).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2008-273912號公報 [Patent Document 1] JP-A-2008-273912

於微影技術的更加進步、阻劑圖型的微細化愈加進展當中,例如以電子束或EUV所進行之微影中,係以形成數十nm之微細圖型為目標。如此地,阻劑圖型尺寸越變小,對阻劑組成物越要求對曝光光源為高感度。 As the lithography technology progresses and the refinement of the resist pattern becomes more and more advanced, for example, lithography by electron beam or EUV is aimed at forming a fine pattern of several tens of nm. As such, the size of the resist pattern becomes smaller, and the resist composition is required to be highly sensitive to the exposure light source.

但是,含有如上述之以往的鎓鹽系酸產生劑之阻劑組成物中,對EUV等之曝光光源謀求高感度化時,變得不易得到所期望之阻劑圖型形狀等,難以全部滿足此等特性。 However, in the resist composition containing the conventional sulfonium-based acid generator as described above, when the exposure light source such as EUV is highly sensitive, it is difficult to obtain a desired shape of the resist pattern, and it is difficult to satisfy all of them. These characteristics.

本發明係有鑑於上述實情而為者,其課題為提供有用於作為阻劑組成物用之酸產生劑的新穎化合物、使用該化合物之酸產生劑、含有該酸產生劑之阻劑組成物及使用該阻劑組成物之阻劑圖型形成方法。 The present invention has been made in view of the above circumstances, and a subject thereof is to provide a novel compound for use as an acid generator for a resist composition, an acid generator using the compound, a resist composition containing the acid generator, and A resist pattern formation method of the resist composition is used.

為了解決上述課題,本發明採用以下構成。 In order to solve the above problems, the present invention adopts the following configuration.

亦即,本發明之第1態樣,為一種阻劑組成物,其係藉由曝光而產生酸,藉由酸的作用,對顯影液之溶解性會變化的阻劑組成物,其特徵在於,含有藉由酸的作用,對 顯影液之溶解性會變化之基材成分(A)、與下述通式(b1)表示之化合物(B1)。 That is, the first aspect of the present invention is a resist composition which is a resist composition which generates an acid by exposure and which changes the solubility of the developer by the action of an acid, and is characterized in that Containing the action of acid, The substrate component (A) in which the solubility of the developer changes, and the compound (B1) represented by the following formula (b1).

[式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位)。Rb10表示烷基、氟化烷基或芳基。Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環。Rb20表示烷基、氟化烷基或芳基。Z表示硫原子、氧原子、羰基或單鍵。Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。X-表示相對陰離子(惟,BF4 -除外)]。 Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) In time, the electron-attracting group is bonded to at least one of the benzene rings. R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group. R b21 and R b22 each independently represent an aromatic ring which may have an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 . R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group. Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. R b1 and R b22 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. X - represents a relative anion (except BF 4 - except).

本發明之第2態樣,係一種阻劑圖型形成方法,其特徵在於具有:於支持體上使用前述第1態樣之阻劑組成物形成阻劑膜之步驟、使前述阻劑膜曝光之步驟、及將前述曝光後之阻劑膜顯影而形成阻劑圖型之步驟。 According to a second aspect of the present invention, there is provided a method for forming a resist pattern, comprising: forming a resist film on a support using the resist composition of the first aspect; and exposing the resist film And the step of developing the resist film after the exposure to form a resist pattern.

本發明之第3態樣,係一種化合物,其特徵在於以下述通式(b1)表示。 A third aspect of the invention is a compound characterized by the following formula (b1).

[式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位)。Rb10表示烷基、氟化烷基或芳基。Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環。Rb20表示烷基、氟化烷基或芳基。Z表示硫原子、氧原子、羰基或單鍵。Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。X-表示相對陰離子(惟,BF4 -除外)]。 Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) In time, the electron-attracting group is bonded to at least one of the benzene rings. R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group. R b21 and R b22 each independently represent an aromatic ring which may have an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 . R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group. Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. R b1 and R b22 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. X - represents a relative anion (except BF 4 - except).

本發明之第4態樣,係一種酸產生劑,其特徵在於由前述第3態樣之化合物所構成。 A fourth aspect of the invention is an acid generator comprising the compound of the third aspect.

依照本發明,可提供有用於作為阻劑組成物用之酸產生劑的新穎化合物、使用該化合物之酸產生劑、含有該酸產生劑之阻劑組成物及使用該阻劑組成物之阻劑圖型形成方法。 According to the present invention, there can be provided a novel compound for use as an acid generator for a resist composition, an acid generator using the same, a resist composition containing the same, and a resist using the resist composition. Pattern formation method.

依照本發明之阻劑組成物,於阻劑圖型之形成中,可實現高感度化,且可形成良好形狀之阻劑圖型。 According to the resist composition of the present invention, in the formation of the resist pattern, high sensitivity can be achieved, and a resist pattern of a good shape can be formed.

本說明書及本申請專利範圍中,「脂肪族」係指對於芳香族之相對的概念,係定義為意指不具備芳香族性之基、化合物等者。 In the present specification and the scope of the present patent application, "aliphatic" means a concept of relativeness to aromatics, and is defined as a group or a compound which does not have aromaticity.

「烷基」,若無特別指明,係為包含直鏈狀、分支鏈狀及環狀之1價飽和烴基者。烷氧基中之烷基亦相同。 The "alkyl group" is a linear monovalent, branched chain or cyclic monovalent saturated hydrocarbon group unless otherwise specified. The alkyl group in the alkoxy group is also the same.

「伸烷基」,若無特別指明,係為包含直鏈狀、分支鏈狀及環狀之2價飽和烴基者。 The "alkylene group" is a linear, branched, and cyclic divalent saturated hydrocarbon group unless otherwise specified.

「鹵化烷基」,係烷基的氫原子之一部分或全部經鹵素原子取代之基,該鹵素原子可列舉氟原子、氯原子、溴原子、碘原子。 The "halogenated alkyl group" is a group in which a part or all of a hydrogen atom of an alkyl group is substituted with a halogen atom, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

「氟化烷基」或「氟化伸烷基」,係指烷基或伸烷基之氫原子之一部分或全部經氟原子取代之基。 The "fluorinated alkyl group" or "fluorinated alkyl group" means a group in which a part or all of a hydrogen atom of an alkyl group or an alkyl group is substituted with a fluorine atom.

「構成單位」,意指構成高分子化合物(樹脂、聚合物、共聚物)之單體單位(單體單位)。 The "composition unit" means a monomer unit (monomer unit) constituting a polymer compound (resin, polymer, copolymer).

記載為「可具有取代基」時,係包含將氫原子(-H)以1價基取代的情況、與將亞甲基(-CH2-)以2價基取代的情 況兩者。 When it is described as "may have a substituent", both the case where the hydrogen atom (-H) is substituted with a monovalent group and the case where the methylene group (-CH 2 -) is substituted with a divalent group are included.

「曝光」係為包含放射線之照射全部的概念。 "Exposure" is a concept that includes all of the radiation.

「由丙烯酸酯所衍生之構成單位」,意指丙烯酸酯之乙烯性雙鍵開裂所構成的構成單位。 The "constituting unit derived from acrylate" means a constituent unit composed of cleavage of an ethylenic double bond of an acrylate.

「丙烯酸酯」,為丙烯酸(CH2=CH-COOH)之羧基末端的氫原子經有機基取代之化合物。 "Acrylate" is a compound in which a hydrogen atom at the carboxyl terminal of acrylic acid (CH 2 =CH-COOH) is substituted with an organic group.

丙烯酸酯,其鍵結於α位之碳原子的氫原子亦可經取代基取代。該取代鍵結於α位之碳原子的氫原子之取代基(Rα0),為氫原子以外之原子或基,可列舉例如碳數1~5之烷基、碳數1~5之鹵化烷基等。又,取代基(Rα0)經含有酯鍵之取代基取代的依康酸二酯、或取代基(Rα0)經羥基烷基或修飾了其羥基而得之基取代的α羥基丙烯酸酯亦包含在內。再者,丙烯酸酯之α位的碳原子,若無特別指明,係指丙烯酸之羰基所鍵結之碳原子。 In the acrylate, a hydrogen atom bonded to a carbon atom at the α-position may be substituted with a substituent. The substituent (R α0 ) substituted with a hydrogen atom bonded to a carbon atom at the α -position is an atom or a group other than a hydrogen atom, and examples thereof include an alkyl group having 1 to 5 carbon atoms and a halogenated alkane having 1 to 5 carbon atoms. Base. Further, the substituent (R α0) via an ester bond of substituents itaconic acid ester, or a substituent (R α0) hydroxyalkyl or modified by a hydroxyl group derived from the substituted α-hydroxy acrylate is also Included. Further, the carbon atom at the α position of the acrylate refers to a carbon atom to which a carbonyl group of acrylic acid is bonded, unless otherwise specified.

以下,有將鍵結於α位之碳原子的氫原子被取代基取代之丙烯酸酯稱為α取代丙烯酸酯者。又,有將丙烯酸酯與α取代丙烯酸酯一併稱為「(α取代)丙烯酸酯」者。 Hereinafter, an acrylate in which a hydrogen atom bonded to a carbon atom of the α -position is substituted with a substituent is referred to as an α- substituted acrylate. Further, the acrylate and the α- substituted acrylate are collectively referred to as "( α- substituted) acrylate".

「由丙烯醯胺所衍生之構成單位」,意指丙烯醯胺之乙烯性雙鍵開裂所構成之構成單位。 "Constituent unit derived from acrylamide" means a constituent unit composed of ethylene double bond cracking of acrylamide.

丙烯醯胺,其鍵結於α位之碳原子的氫原子亦可經取代基取代,丙烯醯胺之胺基的氫原子之一方或兩方可經取代基取代。再者,丙烯醯胺之α位的碳原子,若無特別指明,係指丙烯醯胺之羰基所鍵結之碳原子。 In the acrylamide, the hydrogen atom bonded to the carbon atom at the α -position may be substituted with a substituent, and one or both of the hydrogen atoms of the amine group of the acrylamide may be substituted with a substituent. Further, the carbon atom at the α position of acrylamide refers to a carbon atom to which a carbonyl group of acrylamide is bonded unless otherwise specified.

取代鍵結於丙烯醯胺之α位碳原子的氫原子之取代 基,可列舉於前述α取代丙烯酸酯中,與作為α位之取代基所列舉者(取代基(Rα0))為相同者。 The substituent substituted with a hydrogen atom bonded to the α -position carbon atom of acrylamide may be exemplified by the above-mentioned α- substituted acrylate, and the same as the substituent (the substituent (R α0 )) as the substituent at the α position. .

「由羥基苯乙烯所衍生之構成單位」,意指羥基苯乙烯之乙烯性雙鍵開裂所構成之構成單位。「由羥基苯乙烯衍生物所衍生之構成單位」,意指羥基苯乙烯衍生物之乙烯性雙鍵開裂所構成之構成單位。 The "constituting unit derived from hydroxystyrene" means a constituent unit composed of ethyl double bond cracking of hydroxystyrene. The "constituting unit derived from a hydroxystyrene derivative" means a constituent unit composed of a vinyl double bond cracking of a hydroxystyrene derivative.

「羥基苯乙烯衍生物」,係包含羥基苯乙烯之α位的氫原子被烷基、鹵化烷基等之其他取代基取代者、以及該等之衍生物的概念。作為該等之衍生物,可列舉α位之氫原子可被取代基取代之羥基苯乙烯的羥基之氫原子被有機基取代者;羥基以外之取代基鍵結於α位之氫原子可被取代基取代之羥基苯乙烯的苯環上者等。再者,α位(α位之碳原子),若無特別指明,係指苯環所鍵結之碳原子。 The "hydroxystyrene derivative" is a concept in which a hydrogen atom at the alpha position of the hydroxystyrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof. The derivatives of these, include the α position may be substituted with a hydrogen atom substituted with a hydrogen atom of the hydroxyl group of hydroxystyrene are substituted by an organic group; the substituent other than a hydroxyl group bonded to a hydrogen atom of α position may be substituted The phenyl ring on which the hydroxystyrene is substituted, and the like. Further, the α position (the carbon atom of the α position) means a carbon atom to which a benzene ring is bonded, unless otherwise specified.

作為取代羥基苯乙烯的α位之氫原子之取代基,可列舉與於前述α取代丙烯酸酯中,作為α位之取代基所列舉者為相同者。 The substituent of the hydrogen atom at the α -position of the substituted hydroxystyrene may be the same as those exemplified as the substituent at the α -position in the above-mentioned α- substituted acrylate.

「由乙烯基安息香酸或乙烯基安息香酸衍生物所衍生之構成單位」,意指乙烯基安息香酸或乙烯基安息香酸衍生物之乙烯性雙鍵開裂所構成之構成單位。 The "constituting unit derived from a vinyl benzoic acid or a vinyl benzoic acid derivative" means a constituent unit composed of vinyl double bond cracking of a vinyl benzoic acid or a vinyl benzoic acid derivative.

「乙烯基安息香酸衍生物」,係包含乙烯基安息香酸的α位之氫原子被烷基、鹵化烷基等之其他取代基取代者、以及該等之衍生物的概念。該等之衍生物,可列舉α位之氫原子可被取代基取代之乙烯基安息香酸的羧基之氫原子被有機基取代者;羥基及羧基以外的取代基鍵結於α 位之氫原子可被取代基取代之乙烯基安息香酸之苯環上者等。再者,α位(α位之碳原子),若無特別指明,係指苯環所鍵結之碳原子。 The "vinyl benzoic acid derivative" is a concept in which a hydrogen atom at the alpha position of the vinyl benzoic acid is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof. These derivatives include those in which the hydrogen atom of the carboxyl group of the vinyl benzoic acid which may be substituted by a substituent at the α -position is substituted with an organic group; the substituent other than the hydroxyl group and the carboxyl group may be bonded to the hydrogen atom at the α position. A benzoic acid of a vinyl benzoic acid substituted with a substituent, and the like. Further, the α position (the carbon atom of the α position) means a carbon atom to which a benzene ring is bonded, unless otherwise specified.

「苯乙烯」,係為亦包含苯乙烯及苯乙烯的α位之氫原子被烷基、鹵化烷基等之其他取代基取代者的概念。 "Styrene" is a concept in which a hydrogen atom of the alpha position of styrene and styrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group.

「苯乙烯衍生物」,係為包含苯乙烯的α位之氫原子被烷基、鹵化烷基等之其他取代基取代者、以及該等之衍生物的概念。該等之衍生物,可列舉取代基鍵結於α位之氫原子可被取代基取代之羥基苯乙烯之苯環上者等。再者,α位(α位之碳原子),若無特別指明,係指苯環所鍵結之碳原子。 The "styrene derivative" is a concept in which a hydrogen atom containing an α -position of styrene is substituted with another substituent such as an alkyl group or a halogenated alkyl group, and derivatives thereof. Examples of such derivatives include those in which a substituent is bonded to a benzene ring of a hydroxystyrene in which a hydrogen atom at the α position is substituted with a substituent. Further, the α position (the carbon atom of the α position) means a carbon atom to which a benzene ring is bonded, unless otherwise specified.

「苯乙烯所衍生之構成單位」、「苯乙烯衍生物所衍生之構成單位」,意指苯乙烯或苯乙烯衍生物之乙烯性雙鍵開裂所構成之構成單位。 The "constituting unit derived from styrene" and "the constituent unit derived from the styrene derivative" mean a constituent unit composed of ethylene double bond cracking of styrene or a styrene derivative.

作為上述α位之取代基之烷基,較佳為直鏈狀或分支鏈狀之烷基,具體而言,可列舉碳數1~5之烷基(甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基)等。 The alkyl group which is a substituent of the above α position is preferably a linear or branched alkyl group, and specific examples thereof include an alkyl group having 1 to 5 carbon atoms (methyl group, ethyl group, propyl group, and iso group). Propyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl) and the like.

又,作為α位之取代基的鹵化烷基,具體而言,可列舉上述「作為α位之取代基的烷基」之氫原子之一部分或全部,經鹵素原子取代之基。該鹵素原子可列舉氟原子、氯原子、溴原子、碘原子等,特佳為氟原子。 Moreover, as the position of the substituents α halogenated alkyl group, specific examples thereof include the above "as α position of a substituent alkyl" portion or the whole of hydrogen atoms, halogen atoms substituted group. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and particularly preferably a fluorine atom.

又,作為α位之取代基的羥基烷基,具體而言,可列 舉上述「作為α位之取代基的烷基」之氫原子之一部分或全部,經羥基取代之基。該羥基烷基中的羥基之數目較佳為1~5、最佳為1。 In addition, the hydroxyalkyl group which is a substituent of the α -position is specifically a group in which one or all of the hydrogen atoms of the above-mentioned "alkyl group as a substituent at the α -position" is substituted with a hydroxyl group. The number of hydroxyl groups in the hydroxyalkyl group is preferably from 1 to 5, most preferably 1.

(阻劑組成物) (resist composition)

本發明之第1態樣之阻劑組成物,為藉由曝光而產生酸,且藉由酸的作用,對顯影液之溶解性會變化者。 The resist composition of the first aspect of the present invention is an acid which is generated by exposure and which has a change in solubility in a developing solution by the action of an acid.

該阻劑組成物之一實施形態,可列舉含有藉由酸的作用,對顯影液之溶解性會變化之基材成分(A)(以下亦稱為「(A)成分」)、與通式(b1)表示之化合物(B1)(以下亦稱為「(B1)成分」)的阻劑組成物。 In one embodiment of the composition of the resist, the substrate component (A) (hereinafter also referred to as "(A) component)) having a change in solubility in a developing solution by an action of an acid, and a general formula are included. (b1) A resist composition of the compound (B1) (hereinafter also referred to as "(B1) component").

使用本實施形態之阻劑組成物形成阻劑膜,且對該阻劑膜進行選擇性的曝光時,於該阻劑膜之曝光部,自(B1)成分產生酸,藉由該酸之作用,(A)成分對顯影液之溶解性會變化,另一方面,於該阻劑膜之未曝光部,(A)成分對顯影液之溶解性不會變化,因此曝光部與未曝光部之間會產生對顯影液之溶解性的差距。因此,使該阻劑膜顯影時,該阻劑組成物為正型的情況時,阻劑膜曝光部被溶解去除而形成正型之阻劑圖型,該阻劑組成物為負型的情況時,阻劑膜未曝光部被溶解去除,而形成負型之阻劑圖型。 When the resist film is formed by using the resist composition of the present embodiment, and the resist film is selectively exposed, an acid is generated from the (B1) component in the exposed portion of the resist film, by the action of the acid The solubility of the component (A) in the developer changes. On the other hand, in the unexposed portion of the resist film, the solubility of the component (A) does not change in the developer, and therefore the exposed portion and the unexposed portion are not changed. There is a difference in solubility between the developing solution. Therefore, when the resist film is developed, when the resist composition is positive, the exposed portion of the resist film is dissolved and removed to form a positive resist pattern, and the resist composition is negative. When the unexposed portion of the resist film is dissolved and removed, a negative resist pattern is formed.

本說明書中,將阻劑膜曝光部被溶解去除而形成正型阻劑圖型的阻劑組成物稱為正型阻劑組成物,阻劑膜未曝光部被溶解去除而形成負型阻劑圖型的阻劑組成 物稱為負型阻劑組成物。 In the present specification, the resist composition in which the exposed portion of the resist film is dissolved and removed to form a positive resist pattern is referred to as a positive resist composition, and the unexposed portion of the resist film is dissolved and removed to form a negative resist. Pattern resist composition The substance is called a negative resist composition.

本實施形態之阻劑組成物,可為正型阻劑組成物、亦可為負型阻劑組成物。 The resist composition of the present embodiment may be a positive resist composition or a negative resist composition.

又,本實施形態之阻劑組成物,可為阻劑圖型形成時之顯影處理中使用鹼顯影液的鹼顯影製程用、亦可為於該顯影處理中使用含有有機溶劑之顯影液(有機系顯影液)的溶劑顯影製程用。 Further, the resist composition of the present embodiment may be an alkali developing process using an alkali developing solution in the development process when the resist pattern is formed, or a developing solution containing an organic solvent may be used in the developing process (organic It is a solvent developing process for developing solution).

本實施形態之阻劑組成物,為具有藉由曝光而產生酸之酸產生能力者,於(B1)成分以外,(A)成分亦可藉由曝光而產生酸。 The resist composition of the present embodiment is an acid generating ability capable of generating an acid by exposure, and the component (A) may be produced by exposure to an acid other than the component (B1).

(A)成分藉由曝光而產生酸的情況時,該(A)成分係成為「藉由曝光而產生酸,且藉由酸的作用,對顯影液之溶解性會變化之基材成分」。(A)成分為藉由曝光而產生酸,且藉由酸的作用,對顯影液之溶解性會變化之基材成分時,較佳係後述之(A1)成分為藉由曝光而產生酸,且藉由酸的作用而對顯影液之溶解性會變化的高分子化合物。如此之高分子化合物,可使用具有藉由曝光而會產生酸之構成單位的樹脂。藉由曝光而會產生酸之構成單位,可使用公知者。 When the component (A) is produced by exposure, the component (A) is a "substrate component which generates an acid by exposure and which changes the solubility of the developer by the action of an acid". When the component (A) is a substrate component which generates an acid by exposure and the solubility of the developer changes by the action of an acid, it is preferred that the component (A1) described later is an acid generated by exposure. Further, the polymer compound which changes the solubility of the developer by the action of an acid. As such a polymer compound, a resin having a constituent unit which generates an acid by exposure can be used. A known unit of acid is generated by exposure, and a known person can be used.

<(A)成分> <(A) component>

(A)成分,為藉由酸的作用,對顯影液之溶解性會變化之基材成分。 The component (A) is a substrate component which changes the solubility of the developer by the action of an acid.

本發明中,「基材成分」係指具有膜形成能力之有機 化合物,較佳為使用分子量500以上之有機化合物。藉由使該有機化合物之分子量為500以上,會提高膜形成能力,此外,變得容易形成奈米等級之阻劑圖型。 In the present invention, "substrate component" means organic having film forming ability As the compound, an organic compound having a molecular weight of 500 or more is preferably used. When the molecular weight of the organic compound is 500 or more, the film forming ability is improved, and in addition, a nanometer-based resist pattern is easily formed.

作為基材成分使用之有機化合物,係粗分為非聚合物與聚合物。 The organic compound used as the substrate component is roughly classified into a non-polymer and a polymer.

作為非聚合物,通常係使用分子量500以上且未達4000者。以下,稱為「低分子化合物」時,係表示分子量為500以上且未達4000之非聚合物。 As the non-polymer, those having a molecular weight of 500 or more and less than 4,000 are usually used. Hereinafter, the term "low molecular compound" means a non-polymer having a molecular weight of 500 or more and less than 4,000.

作為聚合物,通常係使用分子量1000以上者。以下,稱為「樹脂」、「高分子化合物」或「聚合物」時,係表示分子量為1000以上之聚合物。 As the polymer, those having a molecular weight of 1,000 or more are usually used. Hereinafter, the term "resin", "polymer compound" or "polymer" means a polymer having a molecular weight of 1,000 or more.

聚合物之分子量,係使用以GPC(凝膠滲透層析)所得之以聚苯乙烯換算的質量平均分子量。 The molecular weight of the polymer is a mass average molecular weight in terms of polystyrene obtained by GPC (gel permeation chromatography).

本實施形態之阻劑組成物,為於鹼顯影製程中形成負型阻劑圖型之「鹼顯影製程用負型阻劑組成物」時,或者為於溶劑顯影製程中形成正型阻劑圖型之「溶劑顯影製程用正型阻劑組成物」時,作為(A)成分,較佳為使用對鹼顯影液為可溶性之基材成分(A-2)(以下稱為「(A-2)成分」),且進一步摻合交聯劑成分。該阻劑組成物,例如藉由曝光而自(B1)成分產生酸時,該酸發生作用,於該(A-2)成分與交聯劑成分之間引起交聯,其結果,對鹼顯影液之溶解性會減少(對有機系顯影液之溶解性會增大)。因此,於阻劑圖型之形成中,使將該阻劑組成物塗佈於支持體上而得到之阻劑膜選擇性地曝光時,阻劑膜曝 光部對鹼顯影液會轉為難溶性(對有機系顯影液為可溶性),另一方面,阻劑膜未曝光部對鹼顯影液維持可溶性(對有機系顯影液為難溶性)而未變化,因此藉由以鹼顯影液顯影,會形成負型阻劑圖型。又,此時,藉由以有機系顯影液顯影,會形成正型之阻劑圖型。 The resist composition of the present embodiment is a negative resistant composition for forming an alkali-developing process in a negative resist pattern, or a positive resist in a solvent developing process. In the case of the "former-type resist composition for a solvent-developing process", it is preferable to use a base component (A-2) which is soluble in an alkali developer as the component (A) (hereinafter referred to as "(A-2) ) component"), and further blending the crosslinking agent component. When the resist composition generates an acid from the (B1) component by exposure, for example, the acid acts to cause cross-linking between the component (A-2) and the crosslinking agent component, and as a result, alkali development The solubility of the liquid is reduced (the solubility in the organic developer is increased). Therefore, in the formation of the resist pattern, when the resist film is applied to the support and the resist film is selectively exposed, the resist film is exposed. The light portion is insoluble in the alkali developing solution (soluble in the organic developing solution), and the unexposed portion of the resist film remains soluble in the alkali developing solution (not soluble in the organic developing solution), and thus does not change. By developing with an alkali developer, a negative resist pattern is formed. Further, at this time, a positive resist pattern is formed by development with an organic developer.

作為(A-2)成分之較佳者,可使用對鹼顯影液為可溶性之樹脂(以下稱為「鹼可溶性樹脂」)。 As the component (A-2), a resin which is soluble in an alkali developer (hereinafter referred to as "alkali-soluble resin") can be used.

作為鹼可溶性樹脂,係以例如日本特開2000-206694號公報所揭示之具有由α-(羥基烷基)丙烯酸、或α-(羥基烷基)丙烯酸之烷基酯(較佳為碳數1~5之烷基酯)中選出之至少一者所衍生之構成單位的樹脂;美國專利6949325號公報所揭示之具有磺醯胺基的α位之碳原子所鍵結的氫原子可被取代基取代之丙烯酸樹脂或聚環烯烴樹脂;美國專利6949325號公報、日本特開2005-336452號公報、日本特開2006-317803號公報所揭示之含有氟化醇,且α位之碳原子所鍵結的氫原子可被取代基取代之丙烯酸樹脂;日本特開2006-259582號公報所揭示之具有氟化醇的聚環烯烴樹脂等,就可形成膨潤少之良好的阻劑圖型而言較佳。 As the alkali-soluble resin, an alkyl ester having α- (hydroxyalkyl)acrylic acid or α- (hydroxyalkyl)acrylic acid (preferably having a carbon number of 1) as disclosed in JP-A-2000-206694 is disclosed. a resin of a constituent unit derived from at least one selected from the group consisting of alkyl esters of ~5; and a hydrogen atom bonded to a carbon atom having an α -position of a sulfonamide group disclosed in US Pat. No. 6,943,325 may be substituted with a substituent. the acrylic resin or a substituted polycycloolefin resin; U.S. Patent Publication No. 6,949,325, Japanese Laid-open Patent Publication No. 2005-336452, Japanese Patent Publication Laid-open No. 2006-317803 disclosed in α position carbon atoms of the fluorinated alcohol containing, and are bonded The acrylic resin having a hydrogen atom which may be substituted by a substituent; and a polycycloolefin resin having a fluorinated alcohol disclosed in JP-A-2006-259582, etc., preferably form a good resist pattern which is less swollen. .

再者,前述α-(羥基烷基)丙烯酸,係表示α位之碳原子所鍵結的氫原子可被取代基取代之丙烯酸當中,羧基所鍵結的α位之碳原子上鍵結有氫原子之丙烯酸、與該α位之碳原子上鍵結有羥基烷基(較佳為碳數1~5之羥基烷基)的α-羥基烷基丙烯酸之一方或兩方。 Further, the above α- (hydroxyalkyl)acrylic acid is an acrylic acid in which a hydrogen atom to which a carbon atom bonded to the α -position is bonded may be substituted with a substituent, and a hydrogen atom bonded to the α -position of the carboxyl group is bonded to hydrogen. The acrylic acid of the atom and one or both of the α -hydroxyalkylacrylic acid having a hydroxyalkyl group (preferably a hydroxyalkyl group having 1 to 5 carbon atoms) bonded to the carbon atom at the α -position.

作為交聯劑成分,例如,就容易形成膨潤少之良好的 阻劑圖型而言,較佳為使用具有羥甲基或烷氧基甲基的乙炔脲等之胺基系交聯劑、或三聚氰胺系交聯劑等。交聯劑成分之摻合量,相對於鹼可溶性樹脂100質量份而言,較佳為1~50質量份。 As a crosslinking agent component, for example, it is easy to form a good swelling. The resist pattern is preferably an amine-based crosslinking agent such as acetylene urea having a methylol group or an alkoxymethyl group, or a melamine-based crosslinking agent. The blending amount of the crosslinking agent component is preferably from 1 to 50 parts by mass based on 100 parts by mass of the alkali-soluble resin.

本實施形態之阻劑組成物,為於鹼顯影製程中形成正型阻劑圖型之「鹼顯影製程用正型阻劑組成物」時,或者,為於溶劑顯影製程中形成負型阻劑圖型之「溶劑顯影製程用負型阻劑組成物」時,作為(A)成分,較佳為使用藉由酸的作用而極性會增大之基材成分(A-1)(以下稱為「(A-1)成分」)。藉由使用(A-1)成分,於曝光前後,基材成分之極性會變化,因此不僅鹼顯影製程,於溶劑顯影製程中亦可得到良好的顯影對比。 The resist composition of the present embodiment is a "positive resist composition for an alkali developing process" which forms a positive resist pattern in an alkali developing process, or a negative resist in a solvent developing process. In the case of the "a negative resist composition for a solvent developing process", as the component (A), it is preferred to use a substrate component (A-1) having an increased polarity by the action of an acid (hereinafter referred to as a component). "(A-1) ingredient"). By using the component (A-1), the polarity of the substrate component changes before and after the exposure, so that not only the alkali development process but also a good development contrast can be obtained in the solvent development process.

應用鹼顯影製程時,該(A-1)成分,曝光前對鹼顯影液為難溶性,例如藉由曝光而自(B1)成分產生酸時,藉由該酸的作用使極性增大,對鹼顯影液之溶解性會增大。因此,於阻劑圖型的形成中,對將該阻劑組成物塗佈於支持體上而得到之阻劑膜選擇性地進行曝光時,阻劑膜曝光部對鹼顯影液會由難溶性變化為可溶性,另一方面阻劑膜未曝光部維持鹼難溶性而未變化,因此藉由鹼顯影而會形成正型阻劑圖型。 When the alkali developing process is applied, the component (A-1) is insoluble to the alkali developing solution before exposure, for example, when an acid is generated from the component (B1) by exposure, the polarity is increased by the action of the acid, and the alkali is increased. The solubility of the developer will increase. Therefore, in the formation of the resist pattern, when the resist film obtained by applying the resist composition onto the support is selectively exposed, the exposed portion of the resist film is poorly soluble to the alkali developer. The change is soluble, and on the other hand, the unexposed portion of the resist film maintains the alkali poorly soluble and does not change, so that a positive resist pattern is formed by alkali development.

另一方面,應用溶劑顯影製程時,該(A-1)成分,曝光前對有機系顯影液之溶解性高,藉由曝光而自(B1)成分產生酸時,藉由該酸的作用,極性增高,對有機系顯影液之溶解性會減少。因此,於阻劑圖型的形成中,對將該阻 劑組成物塗佈於支持體上而得到之阻劑膜選擇性地進行曝光時,阻劑膜曝光部對有機系顯影液會由可溶性變化為難溶性,另一方面,阻劑膜未曝光部維持可溶性而未變化,因此藉由以有機系顯影液進行顯影,可於曝光部與未曝光部之間賦予對比,形成負型阻劑圖型。 On the other hand, when the solvent developing process is applied, the component (A-1) has high solubility in an organic developing solution before exposure, and when an acid is generated from the component (B1) by exposure, by the action of the acid, The polarity is increased, and the solubility to the organic developer is reduced. Therefore, in the formation of the resist pattern, the resistance is When the resist composition is applied to the support and the resist film is selectively exposed, the exposed portion of the resist film changes from soluble to poorly soluble, and on the other hand, the exposed portion of the resist film is maintained. Since it is soluble and does not change, by developing with an organic developing solution, it is possible to provide contrast between the exposed portion and the unexposed portion to form a negative resist pattern.

本實施形態之阻劑組成物中,(A)成分較佳為前述(A-1)成分。亦即,本實施形態之阻劑組成物,較佳為於鹼顯影製程中形成正型阻劑圖型之「鹼顯影製程用正型阻劑組成物」、或於溶劑顯影製程中形成負型阻劑圖型之「溶劑顯影製程用負型阻劑組成物」。 In the resist composition of the present embodiment, the component (A) is preferably the component (A-1). That is, the resist composition of the present embodiment is preferably a "positive resist composition for an alkali developing process" which forms a positive resist pattern in an alkali developing process, or a negative type in a solvent developing process. Resist pattern "Negative resist composition for solvent development process".

(A)成分,係使用高分子化合物及/或低分子化合物。 The component (A) is a polymer compound and/or a low molecular compound.

(A)成分為(A-1)成分時,作為(A-1)成分,較佳為含有高分子化合物者,更佳為含有具有含有藉由酸的作用而極性增大之酸分解性基的構成單位(a1)之高分子化合物(A1)(以下亦稱為「(A1)成分」)者。 When the component (A) is the component (A-1), the component (A-1) preferably contains a polymer compound, and more preferably contains an acid-decomposable group having an increase in polarity by an action of an acid. The polymer compound (A1) (hereinafter also referred to as "(A1) component") of the constituent unit (a1).

.關於(A1)成分 . About (A1) ingredients

(A1)成分為具有構成單位(a1)之高分子化合物。 The component (A1) is a polymer compound having a constituent unit (a1).

作為(A1)成分,除了構成單位(a1)以外,較佳使用具有含有含內酯之環式基、含-SO2-之環式基或含碳酸酯之環式基的構成單位(a2)之高分子化合物。 As the component (A1), in addition to the constituent unit (a1), a constituent unit (a2) having a cyclic group containing a lactone, a ring group containing -SO 2 - or a cyclic group containing a carbonate is preferably used. A polymer compound.

又,作為(A1)成分,除了構成單位(a1)以外,或除了構成單位(a1)及構成單位(a2)以外,亦佳使用具有含有含極性基之脂肪族烴基的構成單位(a3)(惟,相當於構成單位 (a1)或構成單位(a2)者除外)之高分子化合物。 Further, as the component (A1), in addition to the constituent unit (a1), or in addition to the constituent unit (a1) and the constituent unit (a2), a constituent unit (a3) having an aliphatic hydrocarbon group containing a polar group is preferably used (a3) ( But equivalent to the constituent unit (a1) or a polymer compound other than the unit (a2).

又,(A1)成分,除了構成單位(a1)~(a3)以外,亦可具有含有酸非解離性之脂肪族環式基的構成單位(a4)、後述通式(a9-1)表示之構成單位、由羥基苯乙烯或苯乙烯所衍生之構成單位(st)、藉由曝光而產生酸之構成單位等。 In addition to the constituent units (a1) to (a3), the component (A1) may have a constituent unit (a4) containing an acid non-dissociable aliphatic cyclic group, and a formula (a9-1) described later. A constituent unit, a constituent unit derived from hydroxystyrene or styrene (st), a constituent unit which generates an acid by exposure, and the like.

≪構成單位(a1)≫ ≪ constituent unit (a1)≫

構成單位(a1),為含有藉由酸的作用而極性增大之酸分解性基的構成單位。 The constituent unit (a1) is a constituent unit containing an acid-decomposable group whose polarity is increased by the action of an acid.

「酸分解性基」,為具有可藉由酸的作用,使該酸分解性基之構造中的至少一部分之鍵結開裂的酸分解性之基。 The "acid-decomposable group" is an acid-decomposable group having a bond capable of cracking at least a part of the structure of the acid-decomposable group by an action of an acid.

藉由酸的作用而極性增大之酸分解性基,可列舉例如藉由酸的作用而分解以產生極性基之基。 The acid-decomposable group which is increased in polarity by the action of an acid may, for example, be decomposed by the action of an acid to form a group of a polar group.

極性基可列舉例如羧基、羥基、胺基、磺基(-SO3H)等。此等之中,尤以構造中含有-OH之極性基(以下有稱為「含OH之極性基」者)為佳、更佳為羧基或羥基、特佳為羧基。 Examples of the polar group include a carboxyl group, a hydroxyl group, an amine group, a sulfo group (-SO 3 H), and the like. Among these, a polar group containing -OH in the structure (hereinafter referred to as "polar group containing OH") is preferred, and a carboxyl group or a hydroxyl group is more preferred, and a carboxyl group is particularly preferred.

作為酸分解性基,更具體而言,可列舉前述極性基經酸解離性基保護而得之基(例如將含OH之極性基之氫原子,以酸解離性基保護而得之基)。 More specifically, examples of the acid-decomposable group include a group obtained by protecting the polar group with an acid dissociable group (for example, a hydrogen atom having a polar group containing OH, which is protected by an acid dissociable group).

此處「酸解離性基」係指(i)具有藉由酸的作用,該酸解離性基與鄰接於該酸解離性基之原子之間的鍵結可開裂的酸解離性之基,或者,(ii)藉由酸的作用,一部分之鍵 結開裂後,藉由進一步產生脫碳酸反應,該酸解離性基與鄰接於該酸解離性基之原子之間的鍵結可開裂之基,的兩者。 The term "acid dissociable group" as used herein means (i) an acid dissociable group having a bond which is cleaved by a bond between an acid dissociable group and an atom adjacent to the acid dissociable group by an action of an acid, or , (ii) by the action of acid, part of the bond After the crack is formed, by further generating a decarboxylation reaction, both of the acid dissociable group and the bond between the atoms adjacent to the acid dissociable group can be cracked.

構成酸分解性基之酸解離性基,必須為較藉由該酸解離性基之解離所生成之極性基的極性更低之基,藉此,藉由酸的作用而使該酸解離性基解離時,會產生較該酸解離性基之極性更高的極性基,使極性增大。其結果,(A1)成分全體之極性增大。藉由極性增大,對顯影液之溶解性相對地變化,顯影液為鹼顯影液時,溶解性增大,顯影液為有機系顯影液時,溶解性減少。 The acid dissociable group constituting the acid-decomposable group must be a group having a lower polarity than the polar group formed by dissociation of the acid-dissociable group, whereby the acid-dissociable group is caused by the action of an acid. Upon dissociation, a polar group having a higher polarity than the acid dissociable group is generated to increase the polarity. As a result, the polarity of the entire component (A1) increases. When the polarity is increased, the solubility in the developer is relatively changed. When the developer is an alkali developer, the solubility is increased. When the developer is an organic developer, the solubility is reduced.

作為酸解離性基,可列舉至今為止作為化學增幅型阻劑組成物用之基礎樹脂的酸解離性基所提出者。 Examples of the acid-dissociable group include those which have hitherto been used as the base dissociable group of the base resin for the chemically amplified resist composition.

作為化學增幅型阻劑組成物用之基礎樹脂的酸解離性基所提出者,具體而言,可列舉以下說明之「縮醛型酸解離性基」、「3級烷基酯型酸解離性基」、「3級烷氧基羰基酸解離性基」。 Specific examples of the acid-dissociable group of the base resin for the chemically amplified resist composition include the "acetal type acid dissociable group" and the "third-stage alkyl ester type acid dissociation" described below. ", "3 alkoxycarbonyl acid dissociable group".

.縮醛型酸解離性基: . Acetal acid dissociable group:

前述極性基當中保護羧基或羥基之酸解離性基,可列舉例如下述通式(a1-r-1)表示之酸解離性基(以下有稱為「縮醛型酸解離性基」者)。 In the above-mentioned polar group, an acid dissociable group which protects a carboxyl group or a hydroxyl group, for example, an acid dissociable group represented by the following formula (a1-r-1) (hereinafter referred to as "acetal type acid dissociable group") .

[式中,Ra’1、Ra’2為氫原子或烷基,Ra’3為烴基,Ra’3亦可與Ra’1、Ra’2之任一者鍵結而形成環]。 [In the formula, Ra' 1 and Ra' 2 are a hydrogen atom or an alkyl group, Ra' 3 is a hydrocarbon group, and Ra' 3 may be bonded to any of Ra' 1 and Ra' 2 to form a ring].

式(a1-r-1)中,Ra’1及Ra’2當中,較佳係至少一方為氫原子、更佳係兩方為氫原子。 In the formula (a1-r-1), at least one of Ra' 1 and Ra' 2 is preferably a hydrogen atom, and more preferably both of them are hydrogen atoms.

Ra’1或Ra’2為烷基時,該烷基可列舉與關於上述α取代丙烯酸酯之說明中,作為可鍵結於α位之碳原子的取代基所列舉之烷基相同者,較佳為碳數1~5之烷基。具體而言,較佳可列舉直鏈狀或分支鏈狀之烷基。更具體而言,可列舉甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等,更佳為甲基或乙基、特佳為甲基。 When Ra' 1 or Ra' 2 is an alkyl group, the alkyl group may be the same as the alkyl group exemplified as the substituent of the carbon atom which may be bonded to the α -position in the description of the above-mentioned α- substituted acrylate. It is preferably an alkyl group having 1 to 5 carbon atoms. Specifically, a linear or branched alkyl group is preferred. More specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group, etc. are mentioned, More preferably, it is a A base or an ethyl group is particularly preferably a methyl group.

式(a1-r-1)中,Ra’3之烴基,可列舉直鏈狀或分支鏈狀之烷基、環狀之烴基。 In the formula (a1-r-1), the hydrocarbon group of Ra' 3 may, for example, be a linear or branched alkyl group or a cyclic hydrocarbon group.

該直鏈狀之烷基,較佳為碳數1~5、更佳為1~4、又更佳為1或2。具體而言,可列舉甲基、乙基、n-丙基、n-丁基、n-戊基等。此等之中,尤以甲基、乙基或n-丁基為佳;更佳為甲基或乙基。 The linear alkyl group preferably has a carbon number of 1 to 5, more preferably 1 to 4, still more preferably 1 or 2. Specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, and an n-pentyl group. Among these, a methyl group, an ethyl group or an n-butyl group is preferred; more preferably a methyl group or an ethyl group.

該分支鏈狀之烷基,較佳為碳數3~10、更佳為3~5。具體而言,可列舉異丙基、異丁基、tert-丁基、異戊基、新戊基、1,1-二乙基丙基、2,2-二甲基丁基等,較佳為異丙基。 The branched chain alkyl group preferably has a carbon number of 3 to 10, more preferably 3 to 5. Specific examples thereof include isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group, 1,1-diethylpropyl group, 2,2-dimethylbutyl group and the like. It is isopropyl.

Ra’3為環狀之烴基時,該烴基可為脂肪族烴基亦可為芳香族烴基,又,可為多環式基亦可為單環式基。 When Ra' 3 is a cyclic hydrocarbon group, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and may be a polycyclic group or a monocyclic group.

作為單環式基之脂肪族烴基,較佳為由單環烷去除1個氫原子而得之基。該單環烷較佳為碳數3~6者,具體而言可列舉環戊烷、環己烷等。 The aliphatic hydrocarbon group as a monocyclic group is preferably a group obtained by removing one hydrogen atom from a monocycloalkane. The monocycloalkane is preferably a carbon number of 3 to 6, and specific examples thereof include cyclopentane and cyclohexane.

作為多環式基之脂肪族烴基,較佳為由多環烷去除1個氫原子而得之基,該多環烷較佳為碳數7~12者,具體而言可列舉金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。 The polycyclic group-based aliphatic hydrocarbon group is preferably a group obtained by removing one hydrogen atom from a polycycloalkane, and the polycycloalkane is preferably a carbon number of 7 to 12, and specific examples thereof include adamantane and a descending Decane, isodecane, tricyclodecane, tetracyclododecane, and the like.

Ra’3之環狀烴基為芳香族烴基時,該芳香族烴基,為具有至少1個芳香環之烴基。 When the cyclic hydrocarbon group of Ra' 3 is an aromatic hydrocarbon group, the aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.

該芳香環只要為具有4n+2個π電子之環狀共軛系,則無特殊限定,可為單環式亦可為多環式。芳香環之碳數較佳為5~30、更佳為5~20、又更佳為6~15、特佳為6~12。 The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be a monocyclic ring or a polycyclic ring. The carbon number of the aromatic ring is preferably from 5 to 30, more preferably from 5 to 20, still more preferably from 6 to 15, and particularly preferably from 6 to 12.

作為芳香環,具體而言,可列舉苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環之碳原子的一部分經雜原子取代之芳香族雜環等。芳香族雜環中之雜原子,可列舉氧原子、硫原子、氮原子等。作為芳香族雜環,具體而言,可列舉吡啶環、噻吩環等。 Specific examples of the aromatic ring include an aromatic hydrocarbon ring such as benzene, naphthalene, anthracene or phenanthrene; and an aromatic heterocyclic ring in which a part of the carbon atom of the aromatic hydrocarbon ring is substituted with a hetero atom. Examples of the hetero atom in the aromatic hetero ring include an oxygen atom, a sulfur atom, and a nitrogen atom. Specific examples of the aromatic heterocyclic ring include a pyridine ring and a thiophene ring.

Ra’3中之芳香族烴基,具體而言,可列舉自前述芳香族烴環或芳香族雜環去除1個氫原子而得之基(芳基或雜芳基);自包含2個以上之芳香環的芳香族化合物(例如聯苯、茀等)去除1個氫原子而得之基;前述芳香族烴環或 芳香族雜環之1個氫原子被伸烷基取代而得之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基等)等。鍵結於前述芳香族烴環或芳香族雜環之伸烷基的碳數,較佳為1~4、更佳為1~2、特佳為1。 Specific examples of the aromatic hydrocarbon group in Ra' 3 include a group obtained by removing one hydrogen atom from the aromatic hydrocarbon ring or the aromatic heterocyclic ring (aryl group or heteroaryl group); An aromatic ring (for example, biphenyl, anthracene, etc.) of an aromatic ring is obtained by removing one hydrogen atom; and a hydrogen atom of the aromatic hydrocarbon ring or the aromatic heterocyclic ring is substituted with an alkyl group (for example, A benzyl group, a phenethyl group, a 1-naphthylmethyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group, an arylalkyl group such as a 2-naphthylethyl group, or the like). The carbon number of the alkyl group bonded to the aromatic hydrocarbon ring or the aromatic heterocyclic ring is preferably from 1 to 4, more preferably from 1 to 2, particularly preferably 1.

Ra’3中之環狀烴基,亦可具有取代基。該取代基可列舉例如-RP1、-RP2-O-RP1、-RP2-CO-RP1、-RP2-CO-ORP1、-RP2-O-CO-RP1、-RP2-OH、-RP2-CN或-RP2-COOH(以下將此等取代基亦統稱為「Ra05」)等。 The cyclic hydrocarbon group in Ra' 3 may have a substituent. Examples of the substituent include -R P1 , -R P2 -OR P1 , -R P2 -CO-R P1 , -R P2 -CO-OR P1 , -R P2 -O-CO-R P1 , -R P2 - OH, -R P2 -CN or -R P2 -COOH (hereinafter, these substituents are also collectively referred to as "Ra 05 ").

此處,RP1為碳數1~10之1價鏈狀飽和烴基、碳數3~20之1價脂肪族環狀飽和烴基或碳數6~30之1價芳香族烴基。又,RP2為單鍵、碳數1~10之2價鏈狀飽和烴基、碳數3~20之2價脂肪族環狀飽和烴基或碳數6~30之2價芳香族烴基。惟,RP1及RP2之鏈狀飽和烴基、脂肪族環狀飽和烴基及芳香族烴基所具有的氫原子之一部分或全部亦可被氟原子取代。上述脂肪族環狀烴基,可具有單獨1種之上述取代基1個以上、亦可具有上述取代基當中之複數種各1個以上。 Here, R P1 is a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms, a monovalent aliphatic cyclic hydrocarbon group having 3 to 20 carbon atoms, or a monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms. Further, R P2 is a single bond, a divalent chain saturated hydrocarbon group having 1 to 10 carbon atoms, a divalent aliphatic cyclic hydrocarbon group having 3 to 20 carbon atoms, or a divalent aromatic hydrocarbon group having 6 to 30 carbon atoms. However, part or all of one of the hydrogen atoms of the chain-like saturated hydrocarbon group, the aliphatic cyclic saturated hydrocarbon group and the aromatic hydrocarbon group of R P1 and R P2 may be substituted by a fluorine atom. The aliphatic cyclic hydrocarbon group may have one or more substituents of the above-mentioned one type, and may have one or more of a plurality of the above-mentioned substituents.

碳數1~10之1價鏈狀飽和烴基,可列舉例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、癸基等。 The monovalent chain-like saturated hydrocarbon group having 1 to 10 carbon atoms may, for example, be a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group or a decyl group.

碳數3~20之1價脂肪族環狀飽和烴基,可列舉例如環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、環十二烷基等之單環式脂肪族飽和烴基;雙環[2.2.2]辛基、三環[5.2.1.02,6]癸基、三環[3.3.1.13,7]癸基、 四環[6.2.1.13,6.02,7]十二烷基、金剛烷基等之多環式脂肪族飽和烴基。 The monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbon atoms may, for example, be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecyl group or a cyclododecyl group. Monocyclic aliphatic saturated hydrocarbon group; bicyclo [2.2.2] octyl, tricyclo [5.2.1.0 2,6 ] fluorenyl, tricyclo[3.3.1.1 3,7 ] fluorenyl, tetracyclic [6.2. 1.13, 6.0 2,7 ] A polycyclic aliphatic saturated hydrocarbon group such as dodecyl or adamantyl.

碳數6~30之1價芳香族烴基,可列舉例如自苯、聯苯、茀、萘、蒽、菲等之芳香族烴環去除1個氫原子而得之基。 Examples of the monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms include a group obtained by removing one hydrogen atom from an aromatic hydrocarbon ring such as benzene, biphenyl, anthracene, naphthalene, anthracene or phenanthrene.

Ra’3與Ra’1、Ra’2之任一者鍵結而形成環時,該環式基較佳為4~7員環、更佳為4~6員環。該環式基之具體例子,可列舉四氫吡喃基、四氫呋喃基等。 When Ra' 3 is bonded to any of Ra' 1 and Ra' 2 to form a ring, the ring group is preferably a 4 to 7 member ring, more preferably a 4 to 6 member ring. Specific examples of the cyclic group include a tetrahydropyranyl group and a tetrahydrofuranyl group.

.3級烷基酯型酸解離性基: . Grade 3 alkyl ester type acid dissociable group:

上述極性基當中,保護羧基之酸解離性基,可列舉例如下述通式(a1-r-2)表示之酸解離性基。 Among the above-mentioned polar groups, the acid-dissociable group which protects a carboxyl group is, for example, an acid dissociable group represented by the following formula (a1-r-2).

再者,下述式(a1-r-2)表示之酸解離性基當中,藉由烷基所構成者,為了方便,以下有稱為「3級烷基酯型酸解離性基」者。 In addition, among the acid-dissociable groups represented by the following formula (a1-r-2), those which are composed of an alkyl group are referred to below as "a tertiary alkyl ester type acid dissociable group" for the sake of convenience.

[式中,Ra’4~Ra’6分別為烴基,Ra’5、Ra’6亦可互相鍵結而形成環]。 [In the formula, Ra' 4 ~ Ra' 6 are each a hydrocarbon group, and Ra' 5 and Ra' 6 may be bonded to each other to form a ring].

作為Ra’4之烴基,可列舉直鏈狀或分支鏈狀之烷基、鏈狀或環狀之烯基、或環狀之烴基。 Examples of the hydrocarbon group of Ra' 4 include a linear or branched alkyl group, a chain or cyclic alkenyl group, or a cyclic hydrocarbon group.

Ra’4中之直鏈狀或分支鏈狀之烷基、環狀之烴基,可 列舉與前述Ra’3相同者。 Ra 'group 4 of the linear or branched chain, the cyclic hydrocarbon group include the aforementioned Ra' are the same. 3.

Ra’4中之鏈狀或環狀之烯基,較佳為碳數2~10之烯基。 The chain or cyclic alkenyl group in Ra' 4 is preferably an alkenyl group having 2 to 10 carbon atoms.

作為Ra’5、Ra’6之烴基,可列舉與前述Ra’3相同者。 Examples of the hydrocarbon group of Ra' 5 and Ra' 6 are the same as those of the above Ra' 3 .

Ra’5與Ra’6互相鍵結而形成環時,可列舉下述通式(a1-r2-1)表示之基、下述通式(a1-r2-2)表示之基、下述通式(a1-r2-3)表示之基。 When Ra' 5 and Ra' 6 are bonded to each other to form a ring, the group represented by the following formula (a1 - r2-1), the group represented by the following formula (a1 - r2-2), and the following The formula (a1-r2-3) represents the base.

另一方面,Ra’4~Ra’6未互相鍵結,而為獨立的烴基時,可列舉下述通式(a1-r2-4)表示之基。 On the other hand, when Ra' 4 -Ra' 6 is not bonded to each other, and is an independent hydrocarbon group, a group represented by the following formula (a1 - r2-4) can be mentioned.

[式中,Ra’10表示碳數1~10之烷基,Ra’11表示與Ra’10所鍵結之碳原子一起形成脂肪族環式基之基。Ya為碳原子,Xa為與Ya一起形成2價之環狀烴基之基。該環狀烴基所具有的氫原子之一部分或全部亦可經取代。Ra01~Ra03係分別獨立地為氫原子、碳數1~10之1價鏈狀飽和烴基或碳數3~20之1價脂肪族環狀飽和烴基。該鏈狀飽和烴基及脂肪族環狀飽和烴基所具有的氫原子之一部分或全部亦可經取代。Ra01~Ra03之2者以上亦可互相鍵結而形成 環狀構造。Yaa為碳原子,Xaa為與Yaa一起形成脂肪族環式基之基。Ra04為可具有取代基之芳香族烴基。Ra’12~Ra’14係分別獨立地表示烴基。*表示鍵結部位(以下本說明書中為相同)]。 [wherein, Ra' 10 represents an alkyl group having 1 to 10 carbon atoms, and Ra' 11 represents a group which forms an aliphatic cyclic group together with a carbon atom to which Ra' 10 is bonded. Ya is a carbon atom, and Xa is a group which forms a divalent cyclic hydrocarbon group together with Ya. Part or all of one of the hydrogen atoms of the cyclic hydrocarbon group may also be substituted. Each of Ra 01 to Ra 03 is independently a hydrogen atom, a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms or a monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbon atoms. Part or all of one of the hydrogen atoms of the chain saturated hydrocarbon group and the aliphatic cyclic saturated hydrocarbon group may also be substituted. Two or more of Ra 01 to Ra 03 may be bonded to each other to form a ring structure. Yaa is a carbon atom, and Xaa is a group which forms an aliphatic cyclic group together with Yaa. Ra 04 is an aromatic hydrocarbon group which may have a substituent. The Ra' 12 ~Ra' 14 series independently represent a hydrocarbon group. * indicates the bonding site (the same in the following description)].

式(a1-r2-1)中,Ra’10之碳數1~10之烷基,較佳為式(a1-r-1)中作為Ra’3之直鏈狀或分支鏈狀之烷基所列舉之基。Ra’10較佳為碳數1~5之烷基。 In the formula (a1-r2-1), the alkyl group having 1 to 10 carbon atoms of Ra' 10 is preferably a linear or branched alkyl group as Ra' 3 in the formula (a1-r-1). The basis of the enumeration. Ra' 10 is preferably an alkyl group having 1 to 5 carbon atoms.

式(a1-r2-1)中,Ra’11與Ra’10所鍵結之碳原子一起形成的脂肪族環式基,較佳為式(a1-r-1)中作為Ra’3之單環式基或多環式基的脂肪族烴基所列舉之基。 In the formula (a1-r2-1), the aliphatic cyclic group formed by Ra' 11 and the carbon atom bonded to Ra' 10 is preferably a single of Ra' 3 in the formula (a1-r-1). The group of the aliphatic or hydrocarbon group of the cyclo- or polycyclic group is exemplified.

式(a1-r2-2)中,Xa與Ya一起形成的2價環狀烴基,可列舉自前述式(a1-r-1)中之Ra’3中的環狀1價烴基(脂肪族烴基、芳香族烴基)進一步去除1個以上的氫原子而得之基。 In the formula (a1-r2-2), the divalent cyclic hydrocarbon group formed by Xa and Ya together may be a cyclic monovalent hydrocarbon group (aliphatic hydrocarbon group) in Ra' 3 in the above formula (a1-r-1). An aromatic hydrocarbon group) is obtained by further removing one or more hydrogen atoms.

Xa與Ya一起形成的2價環狀烴基,亦可具有取代基。該取代基可列舉與上述Ra’3中之環狀烴基可具有的取代基相同者。 The divalent cyclic hydrocarbon group formed by Xa together with Ya may have a substituent. The substituent may be the same as the substituent which the cyclic hydrocarbon group in the above Ra' 3 may have.

式(a1-r2-2)中,Ra01~Ra03中之碳數1~10之1價鏈狀飽和烴基,可列舉例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、癸基等。 In the formula (a1-r2-2), the monovalent chain-like saturated hydrocarbon group having 1 to 10 carbon atoms in the range of Ra 01 to Ra 03 may, for example, be a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group or a hexyl group. Heptyl, octyl, decyl and the like.

Ra01~Ra03中之碳數3~20之1價脂肪族環狀飽和烴基,可列舉例如環丙基、環丁基、環戊基、環己基、環庚基、環辛基、環癸基、環十二烷基等之單環式脂肪族飽和烴基;雙環[2.2.2]辛基、三環[5.2.1.02,6]癸基、三環 [3.3.1.13,7]癸基、四環[6.2.1.13,6.02,7]十二烷基、金剛烷基等之多環式脂肪族飽和烴基等。 The monovalent aliphatic cyclic saturated hydrocarbon group having 3 to 20 carbon atoms in the Ra 01 to Ra 03 may, for example, be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group or a cyclic fluorene group. Monocyclic aliphatic saturated hydrocarbon group such as cyclyl or cyclododecyl; bicyclo[2.2.2]octyl, tricyclo[5.2.1.0 2,6 ]decyl, tricyclo[3.3.1.1 3,7 ]癸a polycyclic aliphatic saturated hydrocarbon group such as a tetracyclo[6.2.1.13, 6.0 2,7 ] dodecyl group or an adamantyl group.

Ra01~Ra03,就衍生構造單位(a1)之單體化合物的合成容易性之觀點而言,尤以氫原子、碳數1~10之1價鏈狀飽和烴基為佳,其中更佳為氫原子、甲基、乙基;特佳為氫原子。 Ra 01 ~ Ra 03 is particularly preferably a hydrogen atom or a monovalent chain saturated hydrocarbon group having 1 to 10 carbon atoms from the viewpoint of easiness of synthesis of a monomer compound derived from a structural unit (a1), more preferably A hydrogen atom, a methyl group or an ethyl group; particularly preferably a hydrogen atom.

上述Ra01~Ra03表示之鏈狀飽和烴基、或脂肪族環狀飽和烴基所具有的取代基,可列舉例如與上述Ra05相同之基。 The substituent of the chain-like saturated hydrocarbon group or the aliphatic cyclic saturated hydrocarbon group represented by the above-mentioned Ra 01 to Ra 03 may, for example, be the same as the above-mentioned Ra 05 .

藉由Ra01~Ra03之2個以上互相鍵結而形成環狀構造所產生的包含碳-碳雙鍵之基,可列舉例如環戊烯基、環己烯基、甲基環戊烯基、甲基環己烯基、環亞戊基乙烯基、環亞己基乙烯基等。此等之中,就衍生構造單位(a1)之單體化合物的合成容易性之觀點而言,尤以環戊烯基、環己烯基、環亞戊基乙烯基為佳。 Examples of the group containing a carbon-carbon double bond which is formed by a ring structure by two or more of Ra 01 to Ra 03 are bonded to each other, and examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a methylcyclopentenyl group. , methylcyclohexenyl, cyclopentylene vinyl, cyclohexylene vinyl, and the like. Among these, a cyclopentenyl group, a cyclohexenyl group, and a cyclopentylene group vinyl group are preferable from the viewpoint of easiness of synthesis of the monomer compound of the structural unit (a1).

式(a1-r2-3)中,Xaa與Yaa一起形成的脂肪族環式基,較佳為式(a1-r-1)中作為Ra’3之單環式基或多環式基的脂肪族烴基所列舉之基。 In the formula (a1-r2-3), aliphatic cyclic group formed together Xaa and Yaa, preferably of formula (a1-r-1) as fat Ra '3 group of a monocyclic or polycyclic group, The group recited for the group of hydrocarbon groups.

式(a1-r2-3)中,Ra04中之芳香族烴基,可列舉自碳數5~30之芳香族烴環去除1個以上的氫原子而得之基。其中,Ra04尤以自碳數6~15之芳香族烴環去除1個以上的氫原子而得之基為佳;更佳為自苯、萘、蒽或菲去除1個以上的氫原子而得之基;又更佳為自苯、萘或蒽去除1個以上的氫原子而得之基;特佳為自苯或萘去除1個以上的 氫原子而得之基;最佳為自苯去除1個以上的氫原子而得之基。 In the formula (a1-r2-3), the aromatic hydrocarbon group in Ra 04 may be one obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring having 5 to 30 carbon atoms. Among them, Ra 04 is preferably obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring having 6 to 15 carbon atoms; more preferably, one or more hydrogen atoms are removed from benzene, naphthalene, anthracene or phenanthrene. More preferably, it is a base obtained by removing one or more hydrogen atoms from benzene, naphthalene or anthracene; particularly preferably a base obtained by removing one or more hydrogen atoms from benzene or naphthalene; A group obtained by removing one or more hydrogen atoms.

式(a1-r2-3)中之Ra04為萘基時,前述式(a1-r2-3)中之Yaa所鍵結的鍵結位置,可為萘基之1位或2位之任意者。 When Ra 04 in the formula (a1-r2-3) is a naphthyl group, the bonding position of the Yaa bond in the above formula (a1-r2-3) may be any one or two of the naphthyl group. .

式(a1-r2-3)中之Ra04為蒽基時,前述式(a1-r2-3)中之Yaa所鍵結的鍵結位置,可為蒽基之1位、2位或9位之任意者。 When Ra 04 in the formula (a1-r2-3) is a fluorenyl group, the bonding position of the Yaa bond in the above formula (a1-r2-3) may be a 1-, 2- or 9-position of the fluorenyl group. Any of them.

式(a1-r2-3)中之Ra04可具有的取代基,可列舉例如甲基、乙基、丙基、羥基、羧基、鹵素原子(氟原子、氯原子、溴原子等)、烷氧基(甲氧基、乙氧基、丙氧基、丁氧基等)、烷氧基羰基等。 The substituent which Ra 04 in the formula (a1-r2-3) may have, for example, a methyl group, an ethyl group, a propyl group, a hydroxyl group, a carboxyl group, a halogen atom (a fluorine atom, a chlorine atom, a bromine atom, etc.), an alkoxy group A group (methoxy, ethoxy, propoxy, butoxy, etc.), an alkoxycarbonyl group or the like.

式(a1-r2-4)中,Ra’12及Ra’14較佳分別獨立地為碳數1~10之烷基,該烷基更佳為式(a1-r-1)中作為Ra’3之直鏈狀或分支鏈狀之烷基所列舉之基;又更佳為碳數1~5之直鏈狀烷基;特佳為甲基或乙基。 In the formula (a1-r2-4), Ra' 12 and Ra' 14 are each independently an alkyl group having 1 to 10 carbon atoms, and the alkyl group is more preferably as Ra' in the formula (a1-r-1). a group of a linear or branched chain alkyl group of 3; more preferably a linear alkyl group having 1 to 5 carbon atoms; particularly preferably a methyl group or an ethyl group.

式(a1-r2-4)中,Ra’13較佳為式(a1-r-1)中作為Ra’3之烴基所例示的直鏈狀或分支鏈狀之烷基、單環式基或多環式基的脂肪族烴基。此等之中,尤更佳為作為Ra’3之單環式基或多環式基的脂肪族烴基所列舉之基。 In the formula (a1-r2-4), Ra' 13 is preferably a linear or branched alkyl group, a monocyclic group or a exemplified as the hydrocarbon group of Ra' 3 in the formula (a1-r-1) or Polycyclic based aliphatic hydrocarbon groups. Among these, a group which is exemplified as the monocyclic or polycyclic aliphatic hydrocarbon group of Ra' 3 is more preferable.

前述式(a1-r2-1)表示之基之具體例子列舉如下。 Specific examples of the base represented by the above formula (a1-r2-1) are as follows.

前述式(a1-r2-2)表示之基之具體例子列舉如下。 Specific examples of the base represented by the above formula (a1 - r2-2) are listed below.

前述式(a1-r2-3)表示之基之具體例子列舉如下。 Specific examples of the base represented by the above formula (a1-r2-3) are as follows.

前述式(a1-r2-4)表示之基之具體例子列舉如下。 Specific examples of the base represented by the above formula (a1-r2-4) are as follows.

.3級烷氧基羰基酸解離性基: . Grade 3 alkoxycarbonyl acid dissociable group:

前述極性基當中保護羥基之酸解離性基,可列舉例如下述通式(a1-r-3)表示之酸解離性基(以下為了方便,有稱為「3級烷氧基羰基酸解離性基」者)。 In the above-mentioned polar group, an acid dissociable group represented by the following formula (a1-r-3) is exemplified (hereinafter, for convenience, it is referred to as "3 alkoxycarbonyl acid dissociation". Base").

[式中,Ra’7~Ra’9分別為烷基]。 [wherein, Ra' 7 ~ Ra' 9 are each an alkyl group].

式(a1-r-3)中,Ra’7~Ra’9較佳分別為碳數1~5之烷基、更佳為1~3。 In the formula (a1-r-3), Ra' 7 to Ra' 9 are preferably an alkyl group having 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms.

又,各烷基之合計碳數較佳為3~7、更佳為3~5、最佳為3~4。 Further, the total carbon number of each alkyl group is preferably from 3 to 7, more preferably from 3 to 5, most preferably from 3 to 4.

作為構成單位(a1),可列舉由α位之碳原子所鍵結之氫原子可被取代基取代之丙烯酸酯所衍生之構成單位、由丙烯醯胺所衍生之構成單位、由羥基苯乙烯或羥基苯乙烯衍生物所衍生之構成單位的羥基中之氫原子的至少一部分被包含前述酸分解性基之取代基所保護的構成單位、由乙烯基安息香酸或乙烯基安息香酸衍生物所衍生之構成單位之-C(=O)-OH中的氫原子之至少一部分被包含前述酸分解性基之取代基所保護的構成單位等。 The constituent unit (a1) may, for example, be a constituent unit derived from an acrylate in which a hydrogen atom bonded to a carbon atom of the α -position may be substituted with a substituent, a constituent unit derived from acrylamide, or a hydroxystyrene or At least a part of a hydrogen atom in a hydroxyl group of a constituent unit derived from a hydroxystyrene derivative is derived from a constituent unit protected by a substituent of the acid-decomposable group, and is derived from a vinyl benzoic acid or a vinylbenzoic acid derivative. At least a part of the hydrogen atoms in the constituent unit -C(=O)-OH is constituted by a constituent unit which is protected by a substituent including the acid-decomposable group.

作為構成單位(a1),於上述之中,尤以由α位之碳原子所鍵結之氫原子可被取代基取代之丙烯酸酯所衍生之構成單位為佳。 The constituent unit (a1) is preferably a constituent unit derived from an acrylate in which a hydrogen atom bonded to a carbon atom at the α -position can be substituted with a substituent.

該構成單位(a1)之較佳的具體例子,可列舉下述通式(a1-1)或(a1-2)表示之構成單位。 Specific preferred examples of the constituent unit (a1) include constituent units represented by the following formula (a1-1) or (a1-2).

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基。Va1為可具有醚鍵之2價烴基,na1為0~2,Ra1為上述式(a1-r-1)或(a1-r-2)表示之酸解離性基。Wa1為na2+1價烴基,na2為1~3,Ra2為上述式(a1-r-1)或(a1-r-3)表示之酸解離性基]。 [In the formula, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms. Va 1 is a divalent hydrocarbon group which may have an ether bond, n a1 is 0 to 2, and Ra 1 is an acid dissociable group represented by the above formula (a1-r-1) or (a1-r-2). 1 is a WA n a2 +1 monovalent hydrocarbon group, n a2 is 1 to 3, the above-described acid of formula (a1-r-1) or (a1-r-3) represented by the dissociative group] Ra 2 is.

前述式(a1-1)中,R之碳數1~5之烷基,較佳為碳數1~5之直鏈狀或分支鏈狀之烷基,具體而言,可列舉甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。碳數1~5之鹵化烷基,為前述碳數1~5之烷基的氫原子之一部分或全部經鹵素原子取代之基。該鹵素原子可列舉氟原子、氯原子、溴原子、碘原子等,特佳為氟原子。 In the above formula (a1-1), the alkyl group having 1 to 5 carbon atoms of R is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specific examples thereof include methyl group and ethyl group. Base, propyl, isopropyl, n-butyl, isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, and the like. The halogenated alkyl group having 1 to 5 carbon atoms is a group in which one or all of hydrogen atoms of the alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and particularly preferably a fluorine atom.

作為R,較佳為氫原子、碳數1~5之烷基或碳數1~5之氟化烷基,由工業上獲得之容易性而言,最佳為氫原子或甲基。 R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms, and is preferably a hydrogen atom or a methyl group from the viewpoint of industrial availability.

前述式(a1-1)中,Va1中之2價烴基,可為脂肪族烴基、亦可為芳香族烴基。 In the above formula (a1-1), the divalent hydrocarbon group in Va 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

作為Va1中之2價烴基的脂肪族烴基,可為 飽和亦可為不飽和,通常較佳為飽和。 The aliphatic hydrocarbon group which is a divalent hydrocarbon group in Va 1 may be saturated or unsaturated, and is usually preferably saturated.

該脂肪族烴基,更具體而言,可列舉直鏈狀或分支鏈狀之脂肪族烴基、或構造中包含環之脂肪族烴基等。 More specifically, the aliphatic hydrocarbon group may, for example, be a linear or branched aliphatic hydrocarbon group or an aliphatic hydrocarbon group having a ring in the structure.

前述直鏈狀之脂肪族烴基,較佳為碳數1~10、更佳為1~6、又更佳為1~4、最佳為1~3。 The linear aliphatic hydrocarbon group preferably has a carbon number of 1 to 10, more preferably 1 to 6, more preferably 1 to 4, most preferably 1 to 3.

作為直鏈狀之脂肪族烴基,較佳為直鏈狀之伸烷基,具體而言,可列舉亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。 The linear aliphatic hydrocarbon group is preferably a linear alkyl group, and specific examples thereof include a methylene group [-CH 2 -], an exoethyl group [-(CH 2 ) 2 -], and a Sanya. Methyl [-(CH 2 ) 3 -], tetramethylene [-(CH 2 ) 4 -], pentamethylene [-(CH 2 ) 5 -], and the like.

前述分支鏈狀之脂肪族烴基,較佳為碳數2~10、更佳為3~6、又更佳為3或4、最佳為3。 The branched chain aliphatic hydrocarbon group preferably has a carbon number of 2 to 10, more preferably 3 to 6, more preferably 3 or 4, most preferably 3.

作為分支鏈狀之脂肪族烴基,較佳為分支鏈狀之伸烷基,具體而言,可列舉-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2-CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。烷基伸烷基中之烷基,較佳為碳數1~5之直鏈狀之烷基。 The branched aliphatic hydrocarbon group is preferably a branched alkyl group, and specifically, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - , etc. alkylmethylene ;-CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3) 2 -CH 2 - , etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. trimethylene group; -CH (CH 3 ) an alkylalkylene group such as an alkyltetramethylene group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like. The alkyl group in the alkylalkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

前述構造中包含環之脂肪族烴基,可列舉脂環式烴基(自脂肪族烴環去除2個氫原子而得之基)、脂環式烴基鍵結於直鏈狀或分支鏈狀之脂肪族烴基的末端而得 之基、脂環式烴基存在於直鏈狀或分支鏈狀之脂肪族烴基途中之基等。前述直鏈狀或分支鏈狀之脂肪族烴基,可列舉與前述直鏈狀之脂肪族烴基或前述分支鏈狀之脂肪族烴基相同者。 The aliphatic hydrocarbon group containing a ring in the above structure may, for example, be an alicyclic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), or an alicyclic hydrocarbon group bonded to a linear or branched aliphatic group. The end of the hydrocarbon group The group or the alicyclic hydrocarbon group is present in the middle of a linear or branched aliphatic hydrocarbon group. The linear or branched aliphatic hydrocarbon group may be the same as the linear aliphatic hydrocarbon group or the branched aliphatic hydrocarbon group.

前述脂環式烴基,較佳為碳數3~20、更佳為3~12。 The alicyclic hydrocarbon group preferably has a carbon number of 3 to 20, more preferably 3 to 12.

前述脂環式烴基可為多環式、亦可為單環式。作為單環式之脂環式烴基,較佳為自單環烷去除2個氫原子而得之基。作為該單環烷,較佳為碳數3~6者,具體而言可列舉環戊烷、環己烷等。作為多環式之脂環式烴基,較佳為自多環烷去除2個氫原子而得之基,作為該多環烷,較佳為碳數7~12者,具體而言可列舉金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。 The alicyclic hydrocarbon group may be a polycyclic ring or a monocyclic ring. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably a carbon number of 3 to 6, and specific examples thereof include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from the polycycloalkane. The polycycloalkane is preferably a carbon number of 7 to 12, and specifically, adamantane , norbornane, isodecane, tricyclodecane, tetracyclododecane, and the like.

作為Va1中之2價烴基的芳香族烴基,為具有芳香環之烴基。 The aromatic hydrocarbon group which is a divalent hydrocarbon group in Va 1 is a hydrocarbon group having an aromatic ring.

該芳香族烴基,較佳為碳數3~30、更佳為5~30、又更佳為5~20、特佳為6~15、最佳為6~10。惟,該碳數不包含取代基中之碳數。 The aromatic hydrocarbon group preferably has a carbon number of 3 to 30, more preferably 5 to 30, still more preferably 5 to 20, particularly preferably 6 to 15, and most preferably 6 to 10. However, the carbon number does not include the carbon number in the substituent.

作為芳香族烴基所具有的芳香環,具體而言,可列舉苯、聯苯、茀、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環之碳原子的一部分被雜原子取代之芳香族雜環等。芳香族雜環中之雜原子,可列舉氧原子、硫原子、氮原子等。 Specific examples of the aromatic ring of the aromatic hydrocarbon group include aromatic hydrocarbon rings such as benzene, biphenyl, anthracene, naphthalene, anthracene, and phenanthrene; and a part of carbon atoms constituting the aromatic hydrocarbon ring are substituted by a hetero atom. An aromatic heterocyclic ring or the like. Examples of the hetero atom in the aromatic hetero ring include an oxygen atom, a sulfur atom, and a nitrogen atom.

作為該芳香族烴基,具體而言,可列舉自前述芳香族烴環去除2個氫原子而得之基(伸芳基);自前述芳香族烴 環去除1個氫原子而得之基(芳基)的1個氫原子被伸烷基取代而得之基(例如自苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基中的芳基進一步去除1個氫原子而得之基)等。前述伸烷基(芳基烷基中之烷基鏈)的碳數,較佳為1~4、更佳為1~2、特佳為1。 Specific examples of the aromatic hydrocarbon group include a group obtained by removing two hydrogen atoms from the aromatic hydrocarbon ring (arylene); A group in which one hydrogen atom of a group (aryl group) obtained by removing one hydrogen atom is substituted with an alkyl group (for example, from benzyl group, phenethyl group, 1-naphthylmethyl group, 2-naphthyl group) The aryl group in the arylalkyl group such as a 1-naphthylethyl group or a 2-naphthylethyl group is further removed by one hydrogen atom). The carbon number of the alkylene group (alkyl chain in the arylalkyl group) is preferably from 1 to 4, more preferably from 1 to 2, particularly preferably 1.

前述式(a1-1)中,Ra1為上述式(a1-r-1)或(a1-r-2)表示之酸解離性基。此等之中,作為Ra1,就更容易提高以電子束或EUV所進行之微影的特性(感度、形狀等)而言,尤以上述式(a1-r-2)表示之酸解離性基為佳。 In the above formula (a1-1), Ra 1 is an acid dissociable group represented by the above formula (a1-r-1) or (a1-r-2). Among these, as Ra 1 , it is easier to improve the characteristics (sensitivity, shape, and the like) of the lithography by electron beam or EUV, particularly the acid dissociation represented by the above formula (a1-r-2). The base is good.

上述式(a1-r-2)表示之酸解離性基之中,尤以上述通式(a1-r2-1)表示之基、通式(a1-r2-2)表示之基、通式(a1-r2-3)表示之基、通式(a1-r2-4)表示之基為佳,此等之中,尤更佳為通式(a1-r2-2)表示之基、通式(a1-r2-3)表示之基。 Among the acid-dissociable groups represented by the above formula (a1-r-2), the group represented by the above formula (a1-r2-1), the group represented by the formula (a1-r2-2), and the formula (in particular) The group represented by a1-r2-3) and the group represented by the formula (a1-r2-4) are preferred, and among these, the group represented by the formula (a1-r2-2) and the formula (preferably) A1-r2-3) indicates the basis.

前述式(a1-2)中,Wa1中之na2+1價烴基,可為脂肪族烴基、亦可為芳香族烴基。該脂肪族烴基,意指不具有芳香族性之烴基,可為飽和、亦可為不飽和,通常較佳為飽和。作為前述脂肪族烴基,可列舉直鏈狀或分支鏈狀之脂肪族烴基、構造中包含環之脂肪族烴基、或組合直鏈狀或分支鏈狀之脂肪族烴基與構造中包含環之脂肪族烴基之基。 In the above formula (a1-2), the n a2 +1 valent hydrocarbon group in Wa 1 may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity, and may be saturated or unsaturated, and is usually preferably saturated. Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group, an aliphatic hydrocarbon group containing a ring in the structure, or an aliphatic hydrocarbon group in which a linear or branched chain is combined, and an aliphatic group containing a ring in the structure. The base of a hydrocarbon group.

前述na2+1價,較佳為2~4價、更佳為2或3價。 The aforementioned n a2 +1 valence is preferably 2 to 4 valence, more preferably 2 or 3 valence.

以下,顯示前述式(a1-1)表示之構成單位之具 體例子。以下各式中,Rα表示氫原子、甲基或三氟甲基。 Hereinafter, a specific example of the constituent unit represented by the above formula (a1-1) will be described. In the following formulae, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

以下,顯示前述式(a1-2)表示之構成單位之具體例子。 Hereinafter, a specific example of the constituent unit represented by the above formula (a1-2) is shown.

(A1)成分所具有的構成單位(a1),可為1種亦可為2種以上。 The constituent unit (a1) of the component (A1) may be one type or two or more types.

作為構成單位(a1),由可容易更加提高以電子束或EUV所進行之微影的特性(感度、形狀等)而言,更佳為前 述式(a1-1)表示之構成單位、又更佳為Ra1為以上述式(a1-r-2)表示之酸解離性基的情況、特佳為Ra1為以上述通式(a1-r2-2)表示之基、通式(a1-r2-3)表示之基的情況。 The constituent unit (a1) is more preferably a constituent unit represented by the above formula (a1-1), and more preferably a characteristic (sensitivity, shape, and the like) which can easily improve the lithography by electron beam or EUV. In the case where Ra 1 is an acid dissociable group represented by the above formula (a1 - r-2), it is particularly preferable that Ra 1 is a group represented by the above formula (a1 - r2-2), and a formula (a1) R2-3) indicates the base.

(A1)成分中之構成單位(a1)的比例,相對於構成(A1)成分之全部構成單位的合計而言,較佳為5~60莫耳%、更佳為10~55莫耳%、又更佳為20~50莫耳%。 The ratio of the constituent unit (a1) in the component (A1) is preferably 5 to 60 mol%, more preferably 10 to 55 mol%, based on the total of all constituent units of the component (A1). More preferably, it is 20~50%.

藉由使構成單位(a1)之比例成為下限值以上,可容易地得到阻劑圖型,亦提高感度、解像性、粗度改善或EL裕度等之微影特性。又,藉由成為上限值以下,可達到與其他構成單位之平衡。 By setting the ratio of the constituent unit (a1) to the lower limit or more, the resist pattern can be easily obtained, and the lithographic characteristics such as sensitivity, resolution, thickness improvement, and EL margin can be improved. Further, by being equal to or less than the upper limit value, the balance with other constituent units can be achieved.

≪構成單位(a2)≫ ≪ constituent unit (a2)≫

構成單位(a2),為含有含內酯之環式基、含-SO2-之環式基或含碳酸酯之環式基的構成單位(惟,相當於構成單位(a1)者除外)。 The constituent unit (a2) is a constituent unit containing a lactone-containing cyclic group, a -SO 2 -containing cyclic group or a carbonate-containing cyclic group (except for the constituent unit (a1)).

構成單位(a2)之含內酯之環式基、含-SO2-之環式基或含碳酸酯之環式基,為使用(A1)成分於形成阻劑膜時,有效於提高阻劑膜對基板之密著性者。又,藉由具有構成單位(a2),於鹼顯影製程中,於顯影時會提高阻劑膜對鹼顯影液之溶解性。 The lactone-containing cyclic group of the constituent unit (a2), the -SO 2 -containing cyclic group or the carbonate-containing cyclic group, is effective for improving the resist when the (A1) component is used to form the resist film. The adhesion of the film to the substrate. Further, by having the constituent unit (a2), the solubility of the resist film to the alkali developing solution is improved during development in the alkali developing process.

「含內酯之環式基」,係表示含有於其環骨架中包含-O-C(=O)-之環(內酯環)的環式基。將內酯環計數為第一個環,僅有內酯環時稱為單環式基,進一步具有其他環構造時,無關其構造,係稱為多環式基。含內酯之環 式基,可為單環式基、亦可為多環式基。 The "per lactone-containing cyclic group" means a cyclic group containing a ring (lactone) containing -O-C(=O)- in its ring skeleton. The lactone ring is counted as the first ring, and the lactone ring is called the monocyclic group. When it has other ring structures, it is called a polycyclic group. Ring containing lactone The formula may be a monocyclic group or a polycyclic group.

構成單位(a2)中之含內酯之環式基,並無特殊限定,可使用任意者。具體而言,可列舉分別以下述通式(a2-r-1)~(a2-r-7)表示之基。 The cyclic group containing a lactone in the constituent unit (a2) is not particularly limited, and any of them may be used. Specifically, the groups represented by the following general formulae (a2-r-1) to (a2-r-7) are exemplified.

[式中,Ra’21分別獨立地為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥基烷基或氰基;R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基、或含-SO2-之環式基;A”為可含有氧原子(-O-)或硫原子(-S-)的碳數1~5之伸烷基、氧原子或硫原子,n’為0~2之整數,m’為0或1]。 [wherein, Ra' 21 is independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; R" is a hydrogen atom, an alkyl group, a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 -containing ring group; A" may contain an oxygen atom (-O-) or sulfur The atom (-S-) has a carbon number of 1 to 5, an alkyl group, an oxygen atom or a sulfur atom, n' is an integer of 0 to 2, and m' is 0 or 1].

前述通式(a2-r-1)~(a2-r-7)中,作為Ra’21中之烷基,較佳為碳數1~6之烷基。該烷基較佳為直鏈狀或分支鏈狀。具體而言,可列舉甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基、己基等。此等之中尤以甲基或乙基為佳;特佳為甲基。 In the above formula (a2-r-1) to (a2-r-7), the alkyl group in Ra' 21 is preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group is preferably linear or branched. Specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group, a hexyl group and the like. Among these, a methyl group or an ethyl group is preferred; a methyl group is particularly preferred.

作為Ra’21中之烷氧基,較佳為碳數1~6之烷氧基。該烷氧基較佳為直鏈狀或分支鏈狀。具體而言,可列舉作為前述Ra’21中之烷基所列舉的烷基與氧原子(-O-)連結而得之基。 The alkoxy group in Ra' 21 is preferably an alkoxy group having 1 to 6 carbon atoms. The alkoxy group is preferably linear or branched. Specifically, the alkyl group exemplified as the alkyl group in the above Ra' 21 is bonded to an oxygen atom (-O-).

作為Ra’21中之鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,較佳為氟原子。 The halogen atom in Ra' 21 may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

作為Ra’21中之鹵化烷基,可列舉前述Ra’21中之烷基的氫原子之一部分或全部被前述鹵素原子取代之基。作為該鹵化烷基,較佳為氟化烷基、特佳為全氟烷基。 As Ra '21 in the halogenated alkyl group include the Ra' part of hydrogen atoms in the alkyl group of 21 or all of the preceding groups substituted with a halogen atom. The halogenated alkyl group is preferably a fluorinated alkyl group, particularly preferably a perfluoroalkyl group.

Ra’21中之-COOR”、-OC(=O)R”中,R”均為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基、或含-SO2-之環式基。 In "COOR" and -OC(=O)R" in Ra' 21 , R" is a hydrogen atom, an alkyl group, a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 group. - The ring base.

作為R”中之烷基,係直鏈狀、分支鏈狀、環狀之任意者均可,碳數較佳為1~15。 The alkyl group in R" may be any of a linear chain, a branched chain, and a cyclic group, and the carbon number is preferably from 1 to 15.

R”為直鏈狀或分支鏈狀之烷基時,較佳為碳數1~10、更佳為碳數1~5、特佳為甲基或乙基。 When R" is a linear or branched alkyl group, it preferably has a carbon number of 1 to 10, more preferably a carbon number of 1 to 5, particularly preferably a methyl group or an ethyl group.

R”為環狀之烷基時,較佳為碳數3~15、更佳為碳數4~12、最佳為碳數5~10。具體而言,可例示自可被氟原子或氟化烷基取代亦可不被取代之單環烷中去除1個以上的氫原子而得之基;自雙環烷、三環烷、四環烷等之多環烷中去除1個以上的氫原子而得之基等。更具體而言,可列舉自環戊烷、環己烷等之單環烷中去除1個以上的氫原子而得之基;自金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之多環烷中去除1個以上的氫原子而得之基 等。 When R" is a cyclic alkyl group, it is preferably a carbon number of 3 to 15, more preferably a carbon number of 4 to 12, most preferably a carbon number of 5 to 10. Specifically, it can be exemplified by a fluorine atom or fluorine. The alkyl group may be substituted with one or more hydrogen atoms in the unsubstituted monocycloalkane; and one or more hydrogen atoms may be removed from the polycycloalkane such as bicycloalkane, tricycloalkane or tetracycloalkane. More specifically, a group obtained by removing one or more hydrogen atoms from a monocycloalkane such as cyclopentane or cyclohexane; and adamantane, norbornane, isodecane, a base obtained by removing one or more hydrogen atoms from a polycycloalkane such as tricyclodecane or tetracyclododecane Wait.

R”中之含內酯之環式基,可列舉與前述通式(a2-r-1)~(a2-r-7)分別表示之基相同者。 The cyclic group containing a lactone in R" may be the same as the group represented by the above formula (a2-r-1) to (a2-r-7).

R”中之含碳酸酯之環式基,係與後述含碳酸酯之環式基相同,具體而言可列舉通式(ax3-r-1)~(ax3-r-3)分別表示之基。 The carbonate-containing cyclic group in R" is the same as the carbonate-containing cyclic group described later, and specifically, the group represented by the formula (ax3-r-1) to (ax3-r-3) .

R”中之含-SO2-之環式基,係與後述含-SO2-之環式基相同,具體而言可列舉通式(a5-r-1)~(a5-r-4)分別表示之基。 The cyclic group containing -SO 2 - in R" is the same as the ring-form group containing -SO 2 - described later, and specifically, the formula (a5-r-1) to (a5-r-4) Represented separately.

作為Ra’21中之羥基烷基,較佳為碳數1~6者,具體而言,可列舉前述Ra’21中之烷基的至少1個氫原子被羥基所取代之基。 The hydroxyalkyl group in Ra' 21 is preferably a carbon number of 1 to 6, and specifically, a group in which at least one hydrogen atom of the alkyl group in the above Ra' 21 is substituted with a hydroxyl group.

前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中,作為A”中的碳數1~5之伸烷基,較佳為直鏈狀或分支鏈狀之伸烷基,可列舉亞甲基、伸乙基、n-伸丙基、伸異丙基等。該伸烷基包含氧原子或硫原子時,其具體例子可列舉於前述伸烷基之末端或碳原子間存在有-O-或-S-之基,例如可列舉-O-CH2-、-CH2-O-CH2-、-S-CH2-、-CH2-S-CH2-等。作為A”,較佳為碳數1~5之伸烷基或-O-、更佳為碳數1~5之伸烷基、最佳為亞甲基。 In the above formula (a2-r-2), (a2-r-3), (a2-r-5), the alkylene group having 1 to 5 carbon atoms in A" is preferably linear or The branched alkyl group may, for example, be a methylene group, an ethyl group, an n-propyl group or an extended isopropyl group. When the alkyl group contains an oxygen atom or a sulfur atom, specific examples thereof may be mentioned above. The terminal of the alkyl group or the carbon atom may have a group of -O- or -S-, and examples thereof include -O-CH 2 -, -CH 2 -O-CH 2 -, -S-CH 2 -, -CH 2 -S-CH 2 -, etc. As A", an alkylene group having 1 to 5 carbon atoms or -O-, more preferably an alkylene group having 1 to 5 carbon atoms, is preferably a methylene group.

列舉通式(a2-r-1)~(a2-r-7)分別表示之基之具體例子如下。 Specific examples of the groups represented by the general formulae (a2-r-1) to (a2-r-7) are as follows.

「含-SO2-之環式基」,係表示含有於其環骨架中包含-SO2-之環的環式基,具體而言,為-SO2-中之硫原子(S)形成環式基之環骨架的一部分之環式基。將於其環骨架中包含-SO2-之環計數為第一個環,僅有該環時稱為單環式基,進一步具有其他環構造時,無關其構造,係稱為多環式基。含-SO2-之環式基,可為單環式基亦可為多環式基。 The "cyclic group containing -SO 2 -" means a cyclic group containing a ring containing -SO 2 - in its ring skeleton, specifically, a sulfur atom (S) in -SO 2 - forms a ring A cyclic group of a portion of a ring skeleton of the formula. The ring containing -SO 2 - in the ring skeleton is counted as the first ring, and the ring is only called the monocyclic group. When further having other ring structures, the structure is called a polycyclic group. . The cyclic group containing -SO 2 - may be a monocyclic group or a polycyclic group.

含-SO2-之環式基,特佳為於其環骨架中包含-O-SO2-之環式基,亦即含有-O-SO2-中之-O-S-形成環骨架的一部分之磺內酯(sultone)環的環式基。 Containing -SO 2 - of the cyclic group, particularly preferably contained in the ring skeleton thereof -O-SO 2 - group of cyclic, i.e. containing -O-SO 2 - in the -OS- form part of the ring skeleton A cyclic group of a sultone ring.

作為含-SO2-之環式基,更具體而言,可列舉下述通式(a5-r-1)~(a5-r-4)分別表示之基。 More specifically, examples of the ring-form group containing -SO 2 - include the groups represented by the following general formulae (a5-r-1) to (a5-r-4).

[式中,Ra’51分別獨立地為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥基烷基或氰基;R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基、或含-SO2-之環式基;A”為可包含氧原子或硫原子的碳數1~5之伸烷基、氧原子或硫原子,n’為0~2之整數]。 [wherein, Ra' 51 is independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; R" is a hydrogen atom, an alkyl group, a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 -containing ring group; A" is a carbon number which may contain an oxygen atom or a sulfur atom ~5 alkyl, oxygen or sulfur atom, n' is an integer from 0 to 2].

前述通式(a5-r-1)~(a5-r-2)中,A”係與前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中之A”相同。 In the above formula (a5-r-1) to (a5-r-2), A" is related to the above formula (a2-r-2), (a2-r-3), (a2-r-5) The middle A" is the same.

Ra’51中之烷基、烷氧基、鹵素原子、鹵化烷基、-COOR”、-OC(=O)R”、羥基烷基,分別可列舉與前述通式(a2-r-1)~(a2-r-7)中的Ra’21之說明中所列舉者為相同者。 The alkyl group, the alkoxy group, the halogen atom, the halogenated alkyl group, the -COOR", the -OC(=O)R", and the hydroxyalkyl group in Ra' 51 can be exemplified by the above formula (a2-r-1). The ones listed in the description of Ra' 21 in ~(a2-r-7) are the same.

列舉通式(a5-r-1)~(a5-r-4)分別表示之基之具體例子如下。式中之「Ac」表示乙醯基。 Specific examples of the groups represented by the general formulae (a5-r-1) to (a5-r-4) are as follows. The "Ac" in the formula represents an ethyl group.

「含碳酸酯之環式基」,係表示含有於其環骨架中包含-O-C(=O)-O-之環(碳酸酯環)的環式基。將碳酸酯環計數為第一個環,僅有碳酸酯環時稱為單環式基,進一步具有其他環構造時,無關其構造,係稱為多環式基。含碳酸酯之環式基,可為單環式基、亦可為多環式基。 The "carbonate-containing cyclic group" means a cyclic group containing a ring (carbonate ring) containing -O-C(=O)-O- in its ring skeleton. The carbonate ring is counted as the first ring, and when it is only the carbonate ring, it is called a monocyclic group. When it has other ring structures, it is called a polycyclic group regardless of its structure. The carbonate-containing cyclic group may be a monocyclic group or a polycyclic group.

作為含碳酸酯之環式基,並無特殊限定,可使用任意者。具體而言,可列舉下述通式(ax3-r-1)~(ax3-r-3)分別表示之基。 The carbonate-containing cyclic group is not particularly limited, and any of them may be used. Specifically, the group represented by the following general formula (ax3-r-1) to (ax3-r-3) is exemplified.

[式中,Ra’x31分別獨立地為氫原子、烷基、烷氧基、鹵素原子、鹵化烷基、羥基、-COOR”、-OC(=O)R”、羥基烷基或氰基;R”為氫原子、烷基、含內酯之環式基、含碳酸酯之環式基、或含-SO2-之環式基;A”為可包含氧原子或硫原子的碳數1~5之伸烷基、氧原子或硫原子,p’為0~3之 整數,q’為0或1]。 Wherein Ra' x31 is independently a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, -COOR", -OC(=O)R", a hydroxyalkyl group or a cyano group; R" is a hydrogen atom, an alkyl group, a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 -containing ring group; A" is a carbon number which may contain an oxygen atom or a sulfur atom ~5 alkyl, oxygen or sulfur atom, p' is an integer from 0 to 3, q' is 0 or 1].

前述通式(ax3-r-2)~(ax3-r-3)中,A”係與前述通式(a2-r-2)、(a2-r-3)、(a2-r-5)中之A”相同。 In the above formula (ax3-r-2)~(ax3-r-3), A" is related to the above formula (a2-r-2), (a2-r-3), (a2-r-5) The middle A" is the same.

Ra’31中之烷基、烷氧基、鹵素原子、鹵化烷基、-COOR”、-OC(=O)R”、羥基烷基,可分別列舉與前述通式(a2-r-1)~(a2-r-7)中的Ra’21之說明中所列舉者為相同者。 The alkyl group, the alkoxy group, the halogen atom, the halogenated alkyl group, the -COOR", the -OC(=O)R", and the hydroxyalkyl group in Ra' 31 can be respectively exemplified by the above formula (a2-r-1) The ones listed in the description of Ra' 21 in ~(a2-r-7) are the same.

列舉通式(ax3-r-1)~(ax3-r-3)分別表示之基之具體例子如下。 Specific examples of the groups represented by the general formula (ax3-r-1) to (ax3-r-3) are as follows.

作為構成單位(a2),尤佳為由α位之碳原子所鍵結之氫原子可被取代基取代之丙烯酸酯所衍生之構成單位。 The constituent unit (a2) is particularly preferably a constituent unit derived from an acrylate in which a hydrogen atom bonded to a carbon atom at the α -position can be substituted with a substituent.

該構成單位(a2),較佳為下述通式(a2-1)表示之構成單位。 The constituent unit (a2) is preferably a constituent unit represented by the following general formula (a2-1).

[式中,R為氫原子、碳數1~5之烷基或碳數1~5之鹵化烷基。Ya21為單鍵或2價連結基。La21為-O-、-COO-、-CON(R’)-、-OCO-、-CONHCO-或-CONHCS-,R’表示氫原子或甲基。惟La21為-O-時,Ya21不為-CO-。Ra21為含內酯之環式基、含碳酸酯之環式基、或含-SO2-之環式基]。 [In the formula, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms. Ya 21 is a single bond or a divalent linkage. La 21 is -O-, -COO-, -CON(R')-, -OCO-, -CONHCO- or -CONHCS-, and R' represents a hydrogen atom or a methyl group. When La 21 is -O-, Ya 21 is not -CO-. Ra 21 is a lactone-containing ring group, a carbonate-containing ring group, or a -SO 2 -containing ring group.

前述式(a2-1)中,R係與前述相同。 In the above formula (a2-1), R is the same as described above.

作為Ya21之2價連結基,並無特殊限定,可列舉可具有取代基之2價烴基、包含雜原子之2價連結基等作為適宜者。 The divalent linking group of Ya 21 is not particularly limited, and examples thereof include a divalent hydrocarbon group which may have a substituent, a divalent linking group containing a hetero atom, and the like.

.可具有取代基之2價烴基: . a divalent hydrocarbon group which may have a substituent:

Ya21為可具有取代基之2價烴基時,該烴基,可為脂肪族烴基、亦可為芳香族烴基。 When Ya 21 is a divalent hydrocarbon group which may have a substituent, the hydrocarbon group may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group.

..Ya21中之脂肪族烴基 . . Aliphatic hydrocarbon group in Ya 21

該脂肪族烴基,意指不具有芳香族性之烴基。該脂肪族烴基,可為飽和、亦可為不飽和,通常較佳為飽和。 The aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity. The aliphatic hydrocarbon group may be saturated or unsaturated, and is usually preferably saturated.

作為前述脂肪族烴基,可列舉直鏈狀或分支鏈狀之脂肪族烴基、或構造中包含環之脂肪族烴基等。 Examples of the aliphatic hydrocarbon group include a linear or branched aliphatic hydrocarbon group or an aliphatic hydrocarbon group having a ring in the structure.

...直鏈狀或分支鏈狀之脂肪族烴基 . . . Linear or branched aliphatic hydrocarbon group

該直鏈狀之脂肪族烴基,碳數較佳為1~10、更佳為1~6、又更佳為1~4、最佳為1~3。 The linear aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, still more preferably 1 to 4 carbon atoms, most preferably 1 to 3 carbon atoms.

作為直鏈狀之脂肪族烴基,較佳為直鏈狀之伸烷基,具體而言,可列舉亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。 The linear aliphatic hydrocarbon group is preferably a linear alkyl group, and specific examples thereof include a methylene group [-CH 2 -], an exoethyl group [-(CH 2 ) 2 -], and a Sanya. Methyl [-(CH 2 ) 3 -], tetramethylene [-(CH 2 ) 4 -], pentamethylene [-(CH 2 ) 5 -], and the like.

該分支鏈狀之脂肪族烴基,碳數較佳為2~10、更佳為3~6、又更佳為3或4、最佳為3。 The branched aliphatic hydrocarbon group preferably has 2 to 10 carbon atoms, more preferably 3 to 6 carbon atoms, still more preferably 3 or 4 carbon atoms, most preferably 3 carbon atoms.

作為分支鏈狀之脂肪族烴基,較佳為分支鏈狀之伸烷基,具體而言,可列舉-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2-CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。烷基伸烷基中之烷基,較佳為碳數1~5的直鏈狀之烷基。 The branched aliphatic hydrocarbon group is preferably a branched alkyl group, and specifically, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - , etc. alkylmethylene ;-CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3) 2 -CH 2 - , etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. trimethylene group; -CH (CH 3 ) an alkylalkylene group such as an alkyltetramethylene group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like. The alkyl group in the alkylalkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

前述直鏈狀或分支鏈狀之脂肪族烴基,可具有亦可不具有取代基。該取代基可列舉氟原子、經氟原子取代的碳數1~5之氟化烷基、羰基等。 The linear or branched aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, a carbonyl group, and the like.

...構造中包含環之脂肪族烴基 . . . An aliphatic hydrocarbon group containing a ring in the structure

作為該構造中包含環之脂肪族烴基,可列舉於環構造中可包含含有雜原子之取代基的環狀之脂肪族烴基(自脂肪族烴環去除2個氫原子而得之基)、前述環狀之脂肪族烴基鍵結於直鏈狀或分支鏈狀之脂肪族烴基末端而得之基、前述環狀之脂肪族烴基存在於直鏈狀或分支鏈狀之脂肪族烴基途中之基等。作為前述直鏈狀或分支鏈狀之脂肪族烴基,可列舉與前述相同者。 Examples of the aliphatic hydrocarbon group containing a ring in the structure include a cyclic aliphatic hydrocarbon group which may include a substituent of a hetero atom in the ring structure (a group obtained by removing two hydrogen atoms from the aliphatic hydrocarbon ring), and the foregoing a group in which a cyclic aliphatic hydrocarbon group is bonded to a terminal of a linear or branched aliphatic hydrocarbon group, and the above-mentioned cyclic aliphatic hydrocarbon group is present in a base of a linear or branched aliphatic hydrocarbon group. . Examples of the linear or branched aliphatic hydrocarbon group include the same as described above.

環狀之脂肪族烴基,碳數較佳為3~20、更佳為3~12。 The cyclic aliphatic hydrocarbon group preferably has a carbon number of 3 to 20, more preferably 3 to 12.

環狀之脂肪族烴基,可為多環式基、亦可為單環式基。作為單環式之脂環式烴基,較佳為自單環烷去除2個氫原子而得之基。該單環烷較佳為碳數3~6者,具體而言可列舉環戊烷、環己烷等。作為多環式之脂環式烴基,較佳為自多環烷去除2個氫原子而得之基,該多環烷較佳為碳數7~12者,具體而言可列舉金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。 The cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably a carbon number of 3 to 6, and specific examples thereof include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing two hydrogen atoms from a polycycloalkane, and the polycycloalkane is preferably a carbon number of 7 to 12, and specifically, adamantane or a descendant is mentioned. Decane, isodecane, tricyclodecane, tetracyclododecane, and the like.

環狀之脂肪族烴基,可具有亦可不具有取代基。該取代基可列舉烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基等。 The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group and the like.

作為前述取代基之烷基,較佳為碳數1~5之烷基,最佳為甲基、乙基、丙基、n-丁基、tert-丁基。 The alkyl group as the above substituent is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為前述取代基之烷氧基,較佳為碳數1~5之烷氧基;更佳為甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n- 丁氧基、tert-丁氧基;最佳為甲氧基、乙氧基。 The alkoxy group as the above substituent is preferably an alkoxy group having 1 to 5 carbon atoms; more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, or an n- group; Butoxy, tert-butoxy; most preferred is methoxy, ethoxy.

作為前述取代基之鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,較佳為氟原子。 The halogen atom as the substituent may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

作為前述取代基之鹵化烷基,可列舉前述烷基的氫原子之一部分或全部被前述鹵素原子取代之基。 The halogenated alkyl group as the substituent may be a group in which one or all of the hydrogen atoms of the alkyl group are substituted by the halogen atom.

環狀之脂肪族烴基,構成其環構造之碳原子的一部分亦可被含有雜原子之取代基取代。該含有雜原子之取代基,較佳為-O-、-C(=O)-O-、-S-、-S(=O)2-、-S(=O)2-O-。 The cyclic aliphatic hydrocarbon group may be substituted with a substituent containing a hetero atom by a part of a carbon atom constituting the ring structure. The substituent containing a hetero atom is preferably -O-, -C(=O)-O-, -S-, -S(=O) 2 -, -S(=O) 2 -O-.

..Ya21中之芳香族烴基 . . Aromatic hydrocarbon group in Ya 21

該芳香族烴基,為具有至少1個芳香環之烴基。 The aromatic hydrocarbon group is a hydrocarbon group having at least one aromatic ring.

該芳香環,只要為具備4n+2個π電子之環狀共軛系,則無特殊限定,可為單環式亦可為多環式。芳香環之碳數較佳為5~30、更佳為5~20、又更佳為6~15、特佳為6~12。惟,該碳數不包含取代基中之碳數。作為芳香環,具體而言,可列舉苯、萘、蒽、菲等之芳香族烴環;構成前述芳香族烴環之碳原子的一部分被雜原子取代之芳香族雜環等。作為芳香族雜環中之雜原子,可列舉氧原子、硫原子、氮原子等。作為芳香族雜環,具體而言,可列舉吡啶環、噻吩環等。 The aromatic ring is not particularly limited as long as it is a cyclic conjugated system having 4n+2 π electrons, and may be a single ring type or a polycyclic type. The carbon number of the aromatic ring is preferably from 5 to 30, more preferably from 5 to 20, still more preferably from 6 to 15, and particularly preferably from 6 to 12. However, the carbon number does not include the carbon number in the substituent. Specific examples of the aromatic ring include an aromatic hydrocarbon ring such as benzene, naphthalene, anthracene or phenanthrene; and an aromatic heterocyclic ring in which a part of the carbon atom of the aromatic hydrocarbon ring is substituted with a hetero atom. Examples of the hetero atom in the aromatic hetero ring include an oxygen atom, a sulfur atom, and a nitrogen atom. Specific examples of the aromatic heterocyclic ring include a pyridine ring and a thiophene ring.

作為芳香族烴基,具體而言,可列舉自前述芳香族烴環或芳香族雜環去除2個氫原子而得之基(伸芳基或雜伸芳基);自包含2個以上之芳香環的芳香族化合物(例如聯苯、茀等)去除2個氫原子而得之基;自前述芳香族烴環 或芳香族雜環去除1個氫原子而得之基(芳基或雜芳基)的1個氫原子被伸烷基取代而得之基(例如自苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基中的芳基進一步去除1個氫原子而得之基)等。鍵結於前述芳基或雜芳基的伸烷基之碳數,較佳為1~4、更佳為1~2、特佳為1。 Specific examples of the aromatic hydrocarbon group include a group obtained by removing two hydrogen atoms from the aromatic hydrocarbon ring or the aromatic heterocyclic ring (such as an aryl group or a heteroaryl group); and two or more aromatic rings are contained. An aromatic compound (such as biphenyl, anthracene, etc.) obtained by removing two hydrogen atoms; from the aforementioned aromatic hydrocarbon ring Or a radical in which one hydrogen atom of an aromatic heterocyclic ring (1 aryl group or heteroaryl group) is substituted with an alkyl group (for example, from a benzyl group, a phenethyl group, a 1-naphthyl group) The aryl group in the arylalkyl group such as a methyl group, a 2-naphthylmethyl group, a 1-naphthylethyl group or a 2-naphthylethyl group is further removed by a hydrogen atom, and the like. The number of carbon atoms bonded to the alkyl group of the above aryl or heteroaryl group is preferably from 1 to 4, more preferably from 1 to 2, particularly preferably 1.

前述芳香族烴基,該芳香族烴基所具有的氫原子亦可被取代基取代。例如該芳香族烴基中之芳香環所鍵結的氫原子亦可被取代基取代。該取代基可列舉例如烷基、烷氧基、鹵素原子、鹵化烷基、羥基等。 In the aromatic hydrocarbon group, a hydrogen atom of the aromatic hydrocarbon group may be substituted with a substituent. For example, a hydrogen atom bonded to an aromatic ring in the aromatic hydrocarbon group may be substituted with a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group and the like.

作為前述取代基之烷基,較佳為碳數1~5之烷基;最佳為甲基、乙基、丙基、n-丁基、tert-丁基。 The alkyl group as the above substituent is preferably an alkyl group having 1 to 5 carbon atoms; most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為前述取代基之烷氧基、鹵素原子及鹵化烷基,可列舉作為取代前述環狀之脂肪族烴基所具有的氫原子之取代基所例示者。 The alkoxy group, the halogen atom and the halogenated alkyl group as the substituent are exemplified as a substituent which substitutes a hydrogen atom which the cyclic aliphatic hydrocarbon group has.

.包含雜原子之2價連結基: . a divalent linking group containing a hetero atom:

Ya21為包含雜原子之2價連結基時,作為該連結基之較佳者,可列舉-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(H亦可被烷基、醯基等之取代基取代)、-S-、-S(=O)2-、-S(=O)2-O-、通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-或-Y21-S(=O)2-O-Y22-表示之基[式中,Y21及Y22分別獨立地 為可具有取代基之2價烴基,O為氧原子,m”為0~3之整數]等。 When Ya 21 is a divalent linking group containing a hetero atom, as a preferred one of the linking group, -O-, -C(=O)-O-, -C(=O)-, -OC(= O)-O-, -C(=O)-NH-, -NH-, -NH-C(=NH)-(H may also be substituted by a substituent such as an alkyl group or a fluorenyl group), -S-, -S (= O) 2 -, - S (= O) 2 -O-, the formula -Y 21 -OY 22 -, - Y 21 -O -, - Y 21 -C (= O) -O-, -C(=O)-OY 21 -, -[Y 21 -C(=O)-O] m" -Y 22 -, -Y 21 -OC(=O)-Y 22 - or -Y 21 -S (=O) 2 -OY 22 - represents a group [wherein, Y 21 and Y 22 are each independently a divalent hydrocarbon group which may have a substituent, O is an oxygen atom, and m" is an integer of 0 to 3].

前述包含雜原子之2價連結基為-C(=O)-NH-、-C(=O)-NH-C(=O)-、-NH-、-NH-C(=NH)-時,其H亦可被烷基、醯基等之取代基取代。該取代基(烷基、醯基等),碳數較佳為1~10、更佳為1~8、特佳為1~5。 When the aforementioned divalent linking group containing a hetero atom is -C(=O)-NH-, -C(=O)-NH-C(=O)-, -NH-, -NH-C(=NH)- And H may be substituted by a substituent such as an alkyl group or a thiol group. The substituent (alkyl group, thiol group, etc.) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.

通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O-Y21-、-[Y21-C(=O)-O]m”-Y22-、-Y21-O-C(=O)-Y22-或-Y21-S(=O)2-O-Y22-中,Y21及Y22分別獨立地為可具有取代基之2價烴基。作為該2價烴基,可列舉與作為前述2價連結基的說明中所列舉(可具有取代基之2價烴基)為相同者。 General formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 -C(=O)-O-, -C(=O)-OY 21 -, -[Y 21 -C(=O ) -O] m" -Y 22 -, -Y 21 -OC(=O)-Y 22 - or -Y 21 -S(=O) 2 -OY 22 -, Y 21 and Y 22 are independently A divalent hydrocarbon group which may have a substituent. The divalent hydrocarbon group may be the same as those exemplified as the divalent linking group (a divalent hydrocarbon group which may have a substituent).

作為Y21,較佳為直鏈狀之脂肪族烴基、更佳為直鏈狀之伸烷基、又更佳為碳數1~5之直鏈狀之伸烷基、特佳為亞甲基或伸乙基。 Y 21 is preferably a linear aliphatic hydrocarbon group, more preferably a linear alkyl group, more preferably a linear alkyl group having a carbon number of 1 to 5, particularly preferably a methylene group. Or stretch ethyl.

作為Y22,較佳為直鏈狀或分支鏈狀之脂肪族烴基;更佳為亞甲基、伸乙基或烷基亞甲基。該烷基亞甲基中之烷基,較佳為碳數1~5之直鏈狀之烷基、更佳為碳數1~3之直鏈狀之烷基、最佳為甲基。 Y 22 is preferably a linear or branched aliphatic hydrocarbon group; more preferably a methylene group, an ethyl group or an alkylmethylene group. The alkyl group in the alkylmethylene group is preferably a linear alkyl group having 1 to 5 carbon atoms, more preferably a linear alkyl group having 1 to 3 carbon atoms, most preferably a methyl group.

式-[Y21-C(=O)-O]m”-Y22-表示之基中,m”為0~3之整數、較佳為0~2之整數、更佳為0或1、特佳為1。換言之,作為式-[Y21-C(=O)-O]m”-Y22-表示之基,特佳為式-Y21-C(=O)-O-Y22-表示之基。其中尤以式-(CH2)a’-C(=O)-O-(CH2)b’-表示之基為佳。該式中,a’為 1~10之整數、較佳為1~8之整數、更佳為1~5之整數、又更佳為1或2、最佳為1。b’為1~10之整數、較佳為1~8之整數、更佳為1~5之整數、又更佳為1或2、最佳為1。 In the formula -[Y 21 -C(=O)-O] m" -Y 22 - represents a group, m" is an integer of 0 to 3, preferably an integer of 0 to 2, more preferably 0 or 1. Very good for 1. In other words, as a group represented by the formula -[Y 21 -C(=O)-O] m" -Y 22 -, it is particularly preferably a group represented by the formula -Y 21 -C(=O)-OY 22 -. Preferably, the group represented by the formula -(CH 2 ) a' -C(=O)-O-(CH 2 ) b' - is preferred. In the formula, a' is an integer from 1 to 10, preferably from 1 to 8. The integer, more preferably an integer from 1 to 5, more preferably 1 or 2, most preferably 1. b' is an integer from 1 to 10, preferably an integer from 1 to 8, more preferably from 1 to 5. An integer, more preferably 1 or 2, is preferably 1.

作為Ya21,較佳為單鍵、酯鍵[-C(=O)-O-]、醚鍵(-O-)、直鏈狀或分支鏈狀之伸烷基、或此等之組合。 As Ya 21 , a single bond, an ester bond [-C(=O)-O-], an ether bond (-O-), a linear or branched alkyl group, or a combination thereof is preferable.

前述式(a2-1)中,Ra21為含內酯之環式基、含-SO2-之環式基或含碳酸酯之環式基。 In the above formula (a2-1), Ra 21 is a lactone-containing ring group, a -SO 2 -containing ring group or a carbonate-containing ring group.

Ra21中之含內酯之環式基、含-SO2-之環式基、含碳酸酯之環式基,分別可適宜地列舉前述通式(a2-r-1)~(a2-r-7)分別表示之基、通式(a5-r-1)~(a5-r-4)分別表示之基、通式(ax3-r-1)~(ax3-r-3)分別表示之基。 The lactone-containing cyclic group, the -SO 2 -containing cyclic group, and the carbonate-containing cyclic group in Ra 21 may be suitably exemplified by the above formula (a2-r-1) to (a2-r). -7) The base, the formula (a5-r-1)~(a5-r-4) respectively represent the base, and the formula (ax3-r-1)~(ax3-r-3) respectively base.

其中尤以含內酯之環式基或含-SO2-之環式基為佳;更佳為前述通式(a2-r-1)、(a2-r-2)、(a2-r-6)或(a5-r-1)分別表示之基。具體而言,更佳為以前述化學式(r-lc-1-1)~(r-lc-1-7)、(r-lc-2-1)~(r-lc-2-18)、(r-lc-6-1)、(r-sl-1-1)、(r-sl-1-18)分別表示之任一者之基。 Especially preferred is a cyclic group containing a lactone or a cyclic group containing -SO 2 -; more preferably the above formula (a2-r-1), (a2-r-2), (a2-r- 6) or (a5-r-1) respectively represent the basis. Specifically, it is more preferable to use the above chemical formulas (r-lc-1-1) to (r-lc-1-7), (r-lc-2-1) to (r-lc-2-18), (r-lc-6-1), (r-sl-1-1), and (r-sl-1-18) each represent a base of any of them.

(A1)成分所具有的構成單位(a2),可為1種亦可為2種以上。 The constituent unit (a2) of the component (A1) may be one type or two or more types.

(A1)成分具有構成單位(a2)時,構成單位(a2)之比例,相對於構成該(A1)成分之全部構成單位的合計而言,較佳為1~80莫耳%、更佳為10~70莫耳%、又更佳為10~65莫耳%、特佳為10~60莫耳%。 When the component (A1) has a constituent unit (a2), the ratio of the constituent unit (a2) is preferably from 1 to 80 mol%, more preferably from 1 to 80 mol%, based on the total of all constituent units constituting the component (A1). 10~70% by mole, more preferably 10~65% by mole, and particularly preferably 10~60% by mole.

藉由使構成單位(a2)之比例成為較佳之下限值以上, 可充分得到含有構成單位(a2)所致的效果,另一方面,藉由成為較佳之上限值以下,可達到與其他構成單位之平衡,各種之微影特性及圖型形狀成為良好。 By setting the ratio of the constituent unit (a2) to a lower limit or more, The effect of the constituent unit (a2) can be sufficiently obtained. On the other hand, by setting it to a lower limit or less, it is possible to achieve a balance with other constituent units, and various lithographic characteristics and pattern shapes are excellent.

≪構成單位(a3)≫ ≪ constituent unit (a3)≫

構成單位(a3),為含有含極性基之脂肪族烴基的構成單位(惟,相當於構成單位(a1)或構成單位(a2)者除外)。 The constituent unit (a3) is a constituent unit containing an aliphatic hydrocarbon group containing a polar group (except for the constituent unit (a1) or the constituent unit (a2)).

(A1)成分藉由具有構成單位(a3),(A)成分之親水性會提高,有助於解像性之提高。 The component (A1) has a structural unit (a3), and the hydrophilicity of the component (A) is improved, which contributes to an improvement in resolution.

作為極性基,可列舉羥基、氰基、羧基、烷基的氫原子之一部分被氟原子取代之羥基烷基等,特佳為羥基。 The polar group may, for example, be a hydroxy group having a hydroxyl group, a cyano group, a carboxyl group or a hydrogen atom of an alkyl group substituted with a fluorine atom, and particularly preferably a hydroxyl group.

作為脂肪族烴基,可列舉碳數1~10之直鏈狀或分支鏈狀之烴基(較佳為伸烷基)、或環狀之脂肪族烴基(環式基)。該環式基可為單環式基亦可為多環式基,例如可由於ArF準分子雷射用阻劑組成物用之樹脂中多數提案者當中適當選擇來使用。作為該環式基,較佳為多環式基,碳數更佳為7~30。 The aliphatic hydrocarbon group may, for example, be a linear or branched hydrocarbon group (preferably alkylene group) having 1 to 10 carbon atoms or a cyclic aliphatic hydrocarbon group (cyclic group). The cyclic group may be a monocyclic group or a polycyclic group, and may be used, for example, as appropriate among most of the proprietors of the resin for the ArF excimer laser resist composition. As the cyclic group, a polycyclic group is preferred, and the carbon number is more preferably from 7 to 30.

其中尤更佳為由包含含有羥基、氰基、羧基、或烷基的氫原子之一部分被氟原子取代之羥基烷基的脂肪族多環式基之丙烯酸酯所衍生之構成單位。該多環式基可例示自雙環烷、三環烷、四環烷等中去除2個以上之氫原子而得之基等。具體而言,可列舉自金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之多環烷中去除2個以上之氫原 子而得之基等。此等多環式基當中,工業上尤佳為自金剛烷去除2個以上之氫原子而得之基、自降莰烷去除2個以上之氫原子而得之基、自四環十二烷去除2個以上之氫原子而得之基。 More preferably, it is a constituent unit derived from an aliphatic polycyclic group acrylate containing a hydroxyalkyl group in which one of a hydrogen atom having a hydroxyl group, a cyano group, a carboxyl group, or an alkyl group is partially substituted by a fluorine atom. The polycyclic group may be a group obtained by removing two or more hydrogen atoms from a bicycloalkane, a tricycloalkane or a tetracycloalkane. Specifically, examples thereof include the removal of two or more hydrogenogens from a polycycloalkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane. The basis of the child and so on. Among these polycyclic groups, industrially, it is preferably a group obtained by removing two or more hydrogen atoms from adamantane, and a base obtained by removing two or more hydrogen atoms from norbornane, from tetracyclododecane. A base obtained by removing two or more hydrogen atoms.

作為構成單位(a3),只要為含有含極性基之脂肪族烴基者,則無特殊限定,可使用任意者。 The constituent unit (a3) is not particularly limited as long as it contains a polar group-containing aliphatic hydrocarbon group, and any of them can be used.

作為構成單位(a3),較佳為由α位之碳原子所鍵結之氫原子可被取代基取代之丙烯酸酯所衍生之構成單位,且其係含有含極性基之脂肪族烴基之構成單位。 The constituent unit (a3) is preferably a constituent unit derived from an acrylate in which a hydrogen atom bonded to a carbon atom of the α -position can be substituted with a substituent, and which is a constituent unit of an aliphatic hydrocarbon group containing a polar group. .

作為構成單位(a3),當含極性基之脂肪族烴基中的烴基為碳數1~10之直鏈狀或分支鏈狀的烴基時,較佳為由丙烯酸之羥基乙酯所衍生之構成單位,該烴基為多環式基時,較佳者可列舉下述式(a3-1)表示之構成單位、式(a3-2)表示之構成單位、式(a3-3)表示之構成單位。 When the hydrocarbon group in the polar group-containing aliphatic hydrocarbon group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms as the constituent unit (a3), it is preferably a constituent unit derived from hydroxyethyl acrylate. When the hydrocarbon group is a polycyclic group, a constituent unit represented by the following formula (a3-1), a constituent unit represented by the formula (a3-2), and a constituent unit represented by the formula (a3-3) are preferable.

[式中,R係與前述相同,j為1~3之整數,k為1~3之整數,t’為1~3之整數,1為1~5之整數,s為1~3之整 數]。 [In the formula, R is the same as the above, j is an integer from 1 to 3, k is an integer from 1 to 3, t' is an integer from 1 to 3, 1 is an integer from 1 to 5, and s is an integer from 1 to 3. ].

式(a3-1)中,j較佳為1或2、更佳為1。j為2時,較佳為羥基鍵結於金剛烷基之3位與5位者。j為1時,較佳為羥基鍵結於金剛烷基之3位者。 In the formula (a3-1), j is preferably 1 or 2, more preferably 1. When j is 2, it is preferred that the hydroxy group is bonded to the 3 and 5 positions of the adamantyl group. When j is 1, it is preferred that the hydroxy group is bonded to the adamantyl group.

j較佳為1,特佳為羥基鍵結於金剛烷基之3位者。 j is preferably 1, particularly preferably a hydroxyl group bonded to the adamantyl group.

式(a3-2)中,k較佳為1。氰基較佳為鍵結於降莰基之5位或6位。 In the formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5- or 6-position of the thiol group.

式(a3-3)中,t’較佳為1。1較佳為1。s較佳為1。此等較佳為於丙烯酸之羧基的末端上鍵結有2-降莰基或3-降莰基。氟化烷基醇較佳為鍵結於降莰基之5或6位。 In the formula (a3-3), t' is preferably 1. 1 is preferably 1. s is preferably 1. These are preferably bonded to a 2-norbornyl group or a 3-norinyl group at the terminal of the carboxyl group of the acrylic acid. The fluorinated alkyl alcohol is preferably bonded to the 5 or 6 position of the thiol group.

(A1)成分所具有的構成單位(a3),可為1種亦可為2種以上。 The constituent unit (a3) of the component (A1) may be one type or two or more types.

(A1)成分具有構成單位(a3)時,構成單位(a3)之比例,相對於構成該(A1)成分之全部構成單位的合計而言,較佳為5~50莫耳%、更佳為5~40莫耳%、又更佳為5~35莫耳%。 When the component (A3) has a constituent unit (a3), the ratio of the constituent unit (a3) is preferably 5 to 50 mol%, more preferably 5 to 50 mol%, based on the total of all constituent units constituting the component (A1). 5 to 40 mol%, and more preferably 5 to 35 mol%.

藉由使構成單位(a3)之比例成為較佳之下限值以上,可充分得到含有構成單位(a3)所致的效果,另一方面,藉由成為較佳之上限值以下,容易達到與其他構成單位之平衡。 By setting the ratio of the constituent unit (a3) to a lower limit or more, the effect of containing the constituent unit (a3) can be sufficiently obtained, and on the other hand, it is easy to achieve the other than the upper limit. The balance of the constituent units.

≪構成單位(a4)≫ ≪ constituent unit (a4)≫

構成單位(a4),為包含酸非解離性之脂肪族環式基的 構成單位。 The constituent unit (a4) is an aliphatic cyclic group containing acid non-dissociable Constitute unit.

(A1)成分藉由具有構成單位(a4),會提高所形成之阻劑圖型的乾蝕刻耐性。又,(A)成分之疏水性會提高。疏水性之提高,可認為特別是於溶劑顯影製程的情況時,有助於解像性、阻劑圖型形狀等之提高。 The (A1) component has a constituent unit (a4), which improves the dry etching resistance of the formed resist pattern. Moreover, the hydrophobicity of the component (A) is improved. The improvement of the hydrophobicity is considered to contribute to the improvement of the resolution, the shape of the resist pattern, and the like particularly in the case of the solvent developing process.

構成單位(a4)中之「酸非解離性環式基」,為藉由曝光而於該阻劑組成物中產生酸時(例如自後述(B1)成分產生酸時),即使該酸作用亦不會解離,維持殘留於該構成單位中的環式基。 The "acid-non-dissociable cyclic group" in the constituent unit (a4) is when an acid is generated in the resist composition by exposure (for example, when an acid is generated from a component (B1) described later), even if the acid acts It does not dissociate and maintains the cyclic group remaining in the constituent unit.

作為構成單位(a4),例如較佳為由包含酸非解離性之脂肪族環式基的丙烯酸酯所衍生之構成單位等。該環式基,可使用作為ArF準分子雷射用、KrF準分子雷射用(較佳為ArF準分子雷射用)等之阻劑組成物的樹脂成分所用而自以往已知的多數者。 The constituent unit (a4) is preferably, for example, a constituent unit derived from an acrylate containing an acid non-dissociable aliphatic cyclic group. The ring group can be used as a resin component of a resist composition such as ArF excimer laser or KrF excimer laser (preferably for ArF excimer laser), and is conventionally known. .

特別是若為由三環癸基、金剛烷基、四環十二烷基、異莰基、降莰基中選出的至少1種時,由工業上容易獲得等之觀點而言較佳。此等之多環式基,亦可具有碳數1~5之直鏈狀或分支鏈狀之烷基作為取代基。 In particular, when it is at least one selected from the group consisting of a tricyclic fluorenyl group, an adamantyl group, a tetracyclododecyl group, an isodecyl group, and a fluorenyl group, it is preferably industrially easy to obtain. These polycyclic groups may have a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.

作為構成單位(a4),具體而言,可例示下述通式(a4-1)~(a4-7)分別表示之構成單位。 Specific examples of the constituent unit (a4) include constituent units represented by the following general formulae (a4-1) to (a4-7).

[式中,Rα係與前述相同]。 [wherein R α is the same as described above].

(A1)成分所具有的構成單位(a4),可為1種亦可為2種以上。 The constituent unit (a4) of the component (A1) may be one type or two or more types.

(A1)成分具有構成單位(a4)時,構成單位(a4)之比例,相對於構成該(A1)成分之全部構成單位的合計而言,較佳為1~30莫耳%、更佳為3~20莫耳%。 When the component (A1) has a constituent unit (a4), the ratio of the constituent unit (a4) is preferably 1 to 30 mol%, more preferably 1 to 30 mol%, based on the total of all constituent units constituting the component (A1). 3~20 mol%.

藉由使構成單位(a4)之比例成為較佳之下限值以上,可充分得到含有構成單位(a4)所致之效果,另一方面,藉由成為較佳之上限值以下,容易達到與其他構成單位之平衡。 By setting the ratio of the constituent unit (a4) to a lower limit or more, the effect of containing the constituent unit (a4) can be sufficiently obtained, and on the other hand, it is easy to reach the other than the upper limit. The balance of the constituent units.

≪構成單位(a9)≫ ≪ constituent unit (a9)≫

構成單位(a9),為下述通式(a9-1)表示之構成單位。 The constituent unit (a9) is a constituent unit represented by the following general formula (a9-1).

[式中,R係與前述相同,Ya91為單鍵或2價連結基,R91為可具有取代基之烴基,Ya92為2價連結基]。 [In the formula, R is the same as described above, and Ya 91 is a single bond or a divalent linking group, R 91 is a hydrocarbon group which may have a substituent, and Ya 92 is a divalent linking group].

前述式(a9-1)中,R係與前述相同。 In the above formula (a9-1), R is the same as described above.

作為R,較佳為氫原子、碳數1~5之烷基或碳數1~5之氟化烷基,就工業上之獲得的容易性而言,特佳為氫原子或甲基。 R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms, and particularly preferably a hydrogen atom or a methyl group in terms of industrial availability.

前述式(a9-1)中,Ya91中之2價連結基,可列舉與上述通式(a2-1)中之Ya21的2價連結基相同者。Ya91較佳為單鍵。 In the above formula (a9-1), the divalent linking group in Ya 91 is the same as the divalent linking group of Ya 21 in the above formula (a2-1). Ya 91 is preferably a single button.

前述式(a9-1)中,Ya92中之2價連結基,可列舉與上述通式(a2-1)中之Ya21的2價連結基相同者。 In the above formula (a9-1), the divalent linking group in Ya 92 may be the same as the divalent linking group of Ya 21 in the above formula (a2-1).

Ya92中之2價連結基中,作為可具有取代基之2價烴基,較佳為直鏈狀或分支鏈狀之脂肪族烴基。 In the divalent linking group of Ya 92 , a divalent hydrocarbon group which may have a substituent is preferably a linear or branched aliphatic hydrocarbon group.

該直鏈狀之脂肪族烴基,較佳為碳數1~10、更佳為1~6、又更佳為1~4、最佳為1~3。作為直鏈狀之脂肪族烴基,較佳為直鏈狀之伸烷基,具體而言,可列舉亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。 The linear aliphatic hydrocarbon group preferably has a carbon number of 1 to 10, more preferably 1 to 6, more preferably 1 to 4, most preferably 1 to 3. The linear aliphatic hydrocarbon group is preferably a linear alkyl group, and specific examples thereof include a methylene group [-CH 2 -], an exoethyl group [-(CH 2 ) 2 -], and a Sanya. Methyl [-(CH 2 ) 3 -], tetramethylene [-(CH 2 ) 4 -], pentamethylene [-(CH 2 ) 5 -], and the like.

該分支鏈狀之脂肪族烴基,較佳為碳數2~10、更佳為3~6、又更佳為3或4、最佳為3。作為分支鏈狀之脂肪族烴基,較佳為分支鏈狀之伸烷基,具體而言,可列舉-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2-CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。烷基伸烷基中之烷基,較佳為碳數1~5之直鏈狀之烷基。 The branched aliphatic hydrocarbon group preferably has a carbon number of 2 to 10, more preferably 3 to 6, more preferably 3 or 4, most preferably 3. The branched aliphatic hydrocarbon group is preferably a branched alkyl group, and specifically, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) 2 -, - C (CH 3 ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - , etc. alkylmethylene ;-CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3) 2 -CH 2 - , etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. trimethylene group; -CH (CH 3 ) an alkylalkylene group such as an alkyltetramethylene group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like. The alkyl group in the alkylalkyl group is preferably a linear alkyl group having 1 to 5 carbon atoms.

又,Ya92中之2價連結基中,作為可具有雜原子之2價連結基,可列舉-O-、-C(=O)-O-、-C(=O)-、-O-C(=O)-O-、-C(=O)-NH-、-NH-、-NH-C(=NH)-(H亦可經烷基、醯基等之取代基取代)、-S-、-S(=O)2-、-S(=O)2-O-、-C(=S)-、通式-Y21-O-Y22-、-Y21-O-、-Y21-C(=O)-O-、-C(=O)-O--Y21、[Y21-C(=O)-O]m’-Y22-或-Y21-O-C(=O)-Y22-表示之基[式中,Y21及Y22係分別獨立地為可具有取代基之2價烴基,O為氧原子,m’為0~3之整數]等。其中尤以-C(=O)-、-C(=S)-為佳。 Further, among the divalent linking groups in Ya 92 , examples of the divalent linking group which may have a hetero atom include -O-, -C(=O)-O-, -C(=O)-, and -OC ( =O)-O-, -C(=O)-NH-, -NH-, -NH-C(=NH)-(H may also be substituted by a substituent such as an alkyl group, a thiol group, etc.), -S- , -S(=O) 2 -, -S(=O) 2 -O-, -C(=S)-, general formula -Y 21 -OY 22 -, -Y 21 -O-, -Y 21 - C(=O)-O-, -C(=O)-O--Y 21 , [Y 21 -C(=O)-O] m' -Y 22 - or -Y 21 -OC(=O) -Y 22 - represents a group [wherein, Y 21 and Y 22 are each independently a divalent hydrocarbon group which may have a substituent, O is an oxygen atom, and m' is an integer of 0 to 3]. Among them, -C(=O)-, -C(=S)- is particularly preferred.

前述式(a9-1)中,R91中之烴基,可列舉烷基、1價之脂環式烴基、芳基、芳烷基等。 In the above formula (a9-1), the hydrocarbon group in R 91 may, for example, be an alkyl group, a monovalent alicyclic hydrocarbon group, an aryl group or an aralkyl group.

R91中之烷基,較佳為碳數1~8、更佳為碳數1~6、又 更佳為碳數1~4,可為直鏈狀亦可為分支鏈狀。具體而言,可列舉甲基、乙基、丙基、丁基、己基、辛基等作為較佳者。 The alkyl group in R 91 preferably has a carbon number of 1 to 8, more preferably 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms, and may be linear or branched. Specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, and an octyl group.

R91中之1價脂環式烴基,較佳為碳數3~20、更佳為碳數3~12,可為多環式、亦可為單環式。作為單環式之脂環式烴基,較佳為自單環烷中去除1個以上的氫原子而得之基。作為該單環烷,較佳為碳數3~6者,具體而言可列舉環丁烷、環戊烷、環己烷等。作為多環式之脂環式烴基,較佳為自多環烷中去除1個以上的氫原子而得之基,作為該多環烷,較佳為碳數7~12者,具體而言可列舉金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等。 The monovalent alicyclic hydrocarbon group in R 91 preferably has a carbon number of 3 to 20, more preferably 3 to 12 carbon atoms, and may be a polycyclic ring or a monocyclic ring. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably a carbon number of 3 to 6, and specific examples thereof include cyclobutane, cyclopentane, and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from the polycycloalkane, and the polycycloalkane is preferably a carbon number of 7 to 12, specifically Adamantane, norbornane, isodecane, tricyclodecane, tetracyclododecane and the like are listed.

R91中之芳基,較佳為碳數6~18者、更佳為碳數6~10者,具體而言特佳為苯基。 The aryl group in R 91 is preferably a carbon number of 6 to 18, more preferably a carbon number of 6 to 10, and particularly preferably a phenyl group.

作為R91中之芳烷基,較佳為碳數1~8之伸烷基與上述「R91中之芳基」鍵結而得之芳烷基、更佳為碳數1~6之伸烷基與上述「R91中之芳基」鍵結而得之芳烷基、特佳為碳數1~4之伸烷基與上述「R91中之芳基」鍵結而得之芳烷基。 The aralkyl group in R 91 is preferably an aralkyl group obtained by bonding an alkylene group having 1 to 8 carbon atoms to the above-mentioned "aryl group in R 91 ", more preferably a carbon number of 1 to 6 An aralkyl group obtained by bonding an alkyl group to the above-mentioned "aryl group in R 91 ", particularly preferably an alkylene group having 1 to 4 carbon atoms and the above-mentioned "aryl group in R 91 " base.

R91中之烴基,較佳為該烴基的氫原子之一部分或全部被氟原子取代、更佳為該烴基的氫原子之30~100%被氟原子取代。其中尤以上述烷基的氫原子之全部被氟原子取代之全氟烷基為特佳。 The hydrocarbon group in R 91 is preferably a part or all of a hydrogen atom of the hydrocarbon group substituted by a fluorine atom, more preferably 30 to 100% of a hydrogen atom of the hydrocarbon group is substituted by a fluorine atom. Among them, a perfluoroalkyl group in which all of the hydrogen atoms of the above alkyl group are substituted by a fluorine atom is particularly preferable.

R91中之烴基,亦可具有取代基。作為該取代基,可列舉鹵素原子、側氧基(=O)、羥基(-OH)、胺基 (-NH2)、-SO2-NH2等。又,構成該烴基之碳原子的一部分亦可被含有雜原子之取代基取代。作為該含有雜原子之取代基,可列舉-O-、-NH-、-N=、-C(=O)-O-、-S-、-S(=O)2-、-S(=O)2-O-。 The hydrocarbon group in R 91 may have a substituent. Examples of the substituent include a halogen atom, a pendant oxy group (=O), a hydroxyl group (-OH), an amine group (-NH 2 ), and -SO 2 -NH 2 . Further, a part of the carbon atom constituting the hydrocarbon group may be substituted with a substituent containing a hetero atom. Examples of the hetero atom-containing substituent include -O-, -NH-, -N=, -C(=O)-O-, -S-, -S(=O) 2 -, -S (= O) 2 -O-.

R91中,作為具有取代基之烴基,可列舉前述通式(a2-r-1)~(a2-r-7)分別表示之含內酯之環式基。 In R 91 , examples of the hydrocarbon group having a substituent include a lactone-containing ring group represented by the above formula (a2-r-1) to (a2-r-7).

又,R91中,作為具有取代基之烴基,亦可列舉前述通式(a5-r-1)~(a5-r-4)分別表示之含-SO2-之環式基;下述化學式表示之取代芳基、1價雜環式基等。 Further, in R 91 , examples of the hydrocarbon group having a substituent include a ring group containing -SO 2 - represented by the above formula (a5-r-1) to (a5-r-4); A substituted aryl group, a monovalent heterocyclic group or the like.

構成單位(a9)之中,尤以下述通式(a9-1-1)表示之構成單位為佳。 Among the constituent units (a9), a constituent unit represented by the following general formula (a9-1-1) is preferable.

[式中,R係與前述相同,Ya91為單鍵或2價連結基,R91為可具有取代基之烴基,R92為氧原子或硫原子]。 [In the formula, R is the same as defined above, and Ya 91 is a single bond or a divalent linking group, R 91 is a hydrocarbon group which may have a substituent, and R 92 is an oxygen atom or a sulfur atom].

通式(a9-1-1)中,關於Ya91、R91、R之說明係與前述相同。又,R92為氧原子或硫原子。 In the general formula (a9-1-1), the descriptions of Ya 91 , R 91 and R are the same as described above. Further, R 92 is an oxygen atom or a sulfur atom.

以下顯示前述式(a9-1)或通式(a9-1-1)表示之構成單位之具體例子。下述式中,Rα表示氫原子、甲基或三氟甲基。 Specific examples of the constituent units represented by the above formula (a9-1) or the formula (a9-1-1) are shown below. In the following formula, R α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

(A1)成分所含有的構成單位(a9)可為1種亦可為2種以上。 The constituent unit (a9) contained in the component (A1) may be one type or two or more types.

(A1)成分具有構成單位(a9)時,構成單位(a9)之比例,相對於構成該(A1)成分之全部構成單位的合計而言,較佳為1~40莫耳%、更佳為3~30莫耳%、特佳為10~30莫耳%。 When the component (A1) has a constituent unit (a9), the ratio of the constituent unit (a9) is preferably 1 to 40 mol%, more preferably 1 to 40 mol%, based on the total of all constituent units constituting the component (A1). 3~30% by mole, and especially good is 10~30% by mole.

藉由使構成單位(a9)之比例成為下限值以上,顯影特性或EL裕度等之微影特性會提高,藉由成為上限值以下,容易達到與其他構成單位之平衡。 When the ratio of the constituent unit (a9) is equal to or greater than the lower limit value, the lithographic characteristics such as the development characteristics and the EL margin are improved, and by setting it as the upper limit or less, it is easy to achieve a balance with other constituent units.

≪構成單位(st)≫ ≪ constituent unit (st)≫

構成單位(st),為由羥基苯乙烯或苯乙烯所衍生之構成單位。 The constituent unit (st) is a constituent unit derived from hydroxystyrene or styrene.

作為較佳之構成單位(st),可列舉下述通式(I)表示之構成單位(st1)、下述通式(II)表示之構成單位(st2)。 The constituent unit (st) represented by the following general formula (I) and the constituent unit (st2) represented by the following general formula (II) are exemplified as the preferred constituent unit (st).

[式中,Rst表示氫原子或甲基。m01表示1~3之整數。R01表示碳數1~5之烷基。m02表示0或1~3之整數]。 [wherein R st represents a hydrogen atom or a methyl group. m 01 represents an integer from 1 to 3. R 01 represents an alkyl group having 1 to 5 carbon atoms. m 02 represents 0 or an integer from 1 to 3].

前述式(I)中,Rst為氫原子或甲基,較佳為氫原子。 In the above formula (I), R st is a hydrogen atom or a methyl group, preferably a hydrogen atom.

m01為1~3之整數,較佳為1。 m 01 is an integer of 1 to 3, preferably 1.

苯環中之羥基的鍵結位置,係o-位、m-位、p-位之任意者均可,但就可容易獲得且為低價格而言,較佳為m01為1、且於p-位具有羥基者。m01為2或3時,可組合任意之取代位置。 The bonding position of the hydroxyl group in the benzene ring may be any of the o-position, the m-position, and the p-position, but it is easily available and, at a low price, preferably m 01 is 1, and The p-position has a hydroxyl group. When m 01 is 2 or 3, any substitution position can be combined.

前述式(II)中,Rst為氫原子或甲基,較佳為氫原子。 In the above formula (II), R st is a hydrogen atom or a methyl group, preferably a hydrogen atom.

R01較佳為碳數1~5之直鏈狀或分支鏈狀之烷基,可列舉甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。工業上較佳為甲基或乙 基。 R 01 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and a tert-butyl group. , pentyl, isopentyl, neopentyl and the like. Industrially preferred is methyl or ethyl.

m02為0或1~3之整數。此等之中,m02較佳為0或1、工業上更佳為0。再者,m02為1時,苯環中之R01的取代位置,係o-位、m-位、p-位之任意者均可,m02為2或3時,可組合任意之取代位置。 m 02 is an integer of 0 or 1 to 3. Among these, m 02 is preferably 0 or 1, and industrially more preferably 0. Further, when m 02 is 1, the substitution position of R 01 in the benzene ring may be any of the o-position, the m-position, and the p-position, and when m 02 is 2 or 3, any substitution may be combined. position.

(A1)成分所含有的構成單位(st)可為1種亦可為2種以上。 The constituent unit (st) contained in the component (A1) may be one type or two or more types.

(A1)成分具有構成單位(st)時,構成單位(st)之比例,相對於構成該(A1)成分之全部構成單位的合計而言,較佳為1~80莫耳%、更佳為10~75莫耳%、又更佳為20~70莫耳%。 When the component (A1) has a constituent unit (st), the ratio of the constituent unit (st) is preferably from 1 to 80 mol%, more preferably from 1 to 80 mol%, based on the total of all constituent units constituting the component (A1). 10 to 75 mol%, and more preferably 20 to 70 mol%.

藉由使構成單位(st)之比例成為下限值以上,會提高顯影特性或EL裕度等之微影特性,藉由成為上限值以下,容易達到與其他構成單位之平衡。 When the ratio of the constituent unit (st) is equal to or higher than the lower limit value, the lithographic characteristics such as development characteristics and EL margin are improved, and the balance with other constituent units is easily achieved by setting it to the upper limit or lower.

本實施形態之阻劑組成物中,(A)成分較佳為含有具有構成單位(a1)之高分子化合物(A1)者。 In the resist composition of the present embodiment, the component (A) preferably contains the polymer compound (A1) having the constituent unit (a1).

阻劑組成物所含有的(A1)成分,可1種單獨使用、亦可合併使用2種以上。 The component (A1) contained in the resist composition may be used alone or in combination of two or more.

作為較佳之(A1)成分,可列舉具有構成單位(a1)與構成單位(a2)之重複構造的高分子化合物(以下亦稱為「(A1-1)成分」)、具有構成單位(a1)與構成單位(st)之重複構造的高分子化合物(以下亦稱為「(A1-2)成分」)。 The polymer compound (hereinafter also referred to as "(A1-1) component)") having a repeating structure of a constituent unit (a1) and a constituent unit (a2), and a constituent unit (a1) are preferable as the component (A1). A polymer compound having a repeating structure of a constituent unit (st) (hereinafter also referred to as "(A1-2) component)".

作為該(A1)成分,具體而言,可例示由構成單位(a1)與構成單位(a2)之重複構造所構成之高分子化合物;由構 成單位(a1)、構成單位(a2)與構成單位(a9)之重複構造所構成之高分子化合物;由構成單位(a1)與構成單位(st)之重複構造所構成之高分子化合物;由構成單位(a1)、構成單位(st)與構成單位(a9)之重複構造所構成之高分子化合物;由構成單位(a1)、構成單位(a2)、構成單位(st)與構成單位(a9)之重複構造所構成之高分子化合物等。 Specific examples of the component (A1) include a polymer compound composed of a repeating structure of a constituent unit (a1) and a constituent unit (a2); a polymer compound composed of a repeating structure of a unit (a1), a constituent unit (a2), and a constituent unit (a9); a polymer compound composed of a repeating structure of a constituent unit (a1) and a constituent unit (st); a polymer compound composed of a repeating structure of a constituent unit (a1), a constituent unit (st), and a constituent unit (a9); a constituent unit (a1), a constituent unit (a2), a constituent unit (st), and a constituent unit (a9) a polymer compound or the like composed of a repeating structure.

又,作為(A)成分,亦佳為組合(A1-1)成分與(A1-2)成分來使用。 Further, as the component (A), it is also preferred to use the component (A1-1) and the component (A1-2).

(A1-1)成分與(A1-2)成分之比率(質量比),較佳為(A1-1)成分/(A1-2)成分=1/9~9/1、更佳為3/7~7/3、又更佳為5/5。 The ratio (mass ratio) of the component (A1-1) to the component (A1-2) is preferably (A1-1) component / (A1-2) component = 1/9 to 9/1, more preferably 3/. 7~7/3, and more preferably 5/5.

(A1)成分之質量平均分子量(Mw)(以凝膠滲透層析(GPC)之聚苯乙烯換算基準)並無特殊限定,較佳為1000~500000左右、更佳為3000~50000左右。 The mass average molecular weight (Mw) of the component (A1) (based on the polystyrene conversion standard of gel permeation chromatography (GPC)) is not particularly limited, but is preferably about 1,000 to 500,000, more preferably about 3,000 to 50,000.

(A1)成分之Mw若為該範圍的較佳之上限值以下時,則具有作為阻劑使用所充分的對阻劑溶劑之溶解性,若為該範圍的較佳之下限值以上時,則耐乾蝕刻性或阻劑圖型截面形狀良好。 When the Mw of the component (A1) is at most the above upper limit of the range, the solubility in the resist solvent is sufficient as a resist, and when it is more preferably the lower limit or more of the range, Good dry etch resistance or resist pattern cross-sectional shape.

(A1)成分之分散度(Mw/Mn)並無特殊限定,較佳為1.0~4.0左右、更佳為1.0~3.0左右、特佳為1.5~2.5左右。再者,Mn表示數平均分子量。 The degree of dispersion (Mw/Mn) of the component (A1) is not particularly limited, but is preferably about 1.0 to 4.0, more preferably about 1.0 to 3.0, and particularly preferably about 1.5 to 2.5. Further, Mn represents a number average molecular weight.

(A)成分中的(A1)成分之比例,相對於(A)成分之總質量而言,較佳為25質量%以上、更佳為50質量%以上、又更佳為75質量%以上、亦可為100質量%。該比 例為25質量%以上時,容易形成高感度化、或粗度改善等之各種微影特性優良的阻劑圖型。如此之效果,特別是於以電子束或EUV所進行之微影上為顯著。 The ratio of the component (A1) in the component (A) is preferably 25% by mass or more, more preferably 50% by mass or more, and still more preferably 75% by mass or more, based on the total mass of the component (A). It can also be 100% by mass. The ratio In the case of 25% by mass or more, it is easy to form a resist pattern having excellent sensitivities such as high sensitivity or improvement in roughness. Such an effect is remarkable particularly in lithography performed by electron beam or EUV.

(A1)成分之製造方法: (A1) component manufacturing method:

(A1)成分,可藉由將衍生各構成單位之單體溶解於聚合溶劑中,於其中添加例如偶氮雙異丁腈(AIBN)、二甲基2,2’-偶氮雙異丁酸酯(例如V-601等)等之自由基聚合起始劑進行聚合而製造。再者,聚合時,亦可藉由合併使用例如HS-CH2-CH2-CH2-C(CF3)2-OH般的鏈轉移劑,而於末端導入-C(CF3)2-OH基。如此地,經導入烷基的氫原子之一部分被氟原子取代之羥基烷基的共聚物,係有效於顯影缺陷之減低或LER(線邊緣粗度:線側壁之不均勻的凹凸)之減低。 The component (A1) can be added to a polymerization solvent by, for example, azobisisobutyronitrile (AIBN), dimethyl 2,2'-azobisisobutyric acid, by dissolving a monomer derived from each constituent unit in a polymerization solvent. A radical polymerization initiator such as an ester (for example, V-601 or the like) is produced by polymerization. Further, in the polymerization, a chain transfer agent such as HS-CH 2 -CH 2 -CH 2 -C(CF 3 ) 2 -OH may be used in combination, and -C(CF 3 ) 2 - may be introduced at the end. OH group. As described above, the copolymer of a hydroxyalkyl group in which a part of a hydrogen atom introduced into an alkyl group is substituted with a fluorine atom is effective in reducing the development defect or reducing the LER (line edge roughness: unevenness of the line side wall).

本實施形態之阻劑組成物中,(A)成分可1種單獨使用、亦可合併使用2種以上。 In the resist composition of the present embodiment, the component (A) may be used alone or in combination of two or more.

本實施形態之阻劑組成物中,(A)成分之含量,只要依所欲形成的阻劑膜厚等來調整即可。 In the resist composition of the present embodiment, the content of the component (A) may be adjusted depending on the thickness of the resist film to be formed or the like.

<(B1)成分> <(B1) component>

本實施形態之阻劑組成物,含有下述通式(b1)表示之化合物((B1)成分)。 The resist composition of the present embodiment contains a compound represented by the following formula (b1) (component (B1)).

[式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位)。Rb10表示烷基、氟化烷基或芳基。Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環。Rb20表示烷基、氟化烷基或芳基。Z表示硫原子、氧原子、羰基或單鍵。Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。X-表示相對陰離子(惟,BF4 -除外)]。 Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) In time, the electron-attracting group is bonded to at least one of the benzene rings. R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group. R b21 and R b22 each independently represent an aromatic ring which may have an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 . R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group. Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. R b1 and R b22 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. X - represents a relative anion (except BF 4 - except).

≪(B1)成分之陽離子部≫ The cation part of the component (B1)

前述式(b1)中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位)。 In the above formula (b1), R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except for the aforementioned aromatic ring) In the case of a benzene ring, the electron-attracting group is bonded to at least one of the benzene rings.

Rb1中之芳香環,只要係具有4n+2個π電子之 環狀共軛系,則無特殊限定,可為單環式亦可為多環式。芳香環之碳數較佳為5~30、更佳為5~20、又更佳為6~15、特佳為6~12。 The aromatic ring in R b1 is not particularly limited as long as it has a ring conjugated system of 4 n + 2 π electrons, and may be a monocyclic ring or a polycyclic ring. The carbon number of the aromatic ring is preferably from 5 to 30, more preferably from 5 to 20, still more preferably from 6 to 15, and particularly preferably from 6 to 12.

作為Rb1,可列舉例如自苯環、萘環、蒽環、菲環等之芳香族烴環去除1個以上的氫原子而得之基;較佳為自苯環或萘環去除1個以上的氫原子而得之基;更佳為自苯環去除1個以上的氫原子而得之基。 Examples of R b1 include a group obtained by removing one or more hydrogen atoms from an aromatic hydrocarbon ring such as a benzene ring, a naphthalene ring, an anthracene ring or a phenanthrene ring; and preferably one or more are removed from the benzene ring or the naphthalene ring. A group derived from a hydrogen atom; more preferably a group obtained by removing one or more hydrogen atoms from the benzene ring.

Rb1中之-SO2Rb10之Rb10表示烷基、氟化烷基或芳基。 In the R b1 -SO 2 R b10 of R b10 represents an alkyl group, a fluorinated alkyl or aryl group.

作為Rb10中之烷基,可列舉碳數1~10之烷基,較佳為碳數1~5之烷基。 The alkyl group in R b10 may, for example, be an alkyl group having 1 to 10 carbon atoms, preferably an alkyl group having 1 to 5 carbon atoms.

作為Rb10中之氟化烷基,可列舉前述「Rb10中之烷基」的氫原子之一部分或全部被氟原子取代之基。 As R b10 in the fluorinated alkyl group include a part of hydrogen atoms of the "alkyl group R b10 in the" all or the group substituted by fluorine atoms.

作為Rb10中之芳基,可列舉與Rb1相同者。 The aryl group in R b10 may be the same as R b1 .

Rb1中之芳香環所具有的電子吸引性基,於由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群之中,尤以氟原子、三氟甲基為佳。 The electron attracting group of the aromatic ring in R b1 is a group of fluorine atoms, trifluoromethyl groups, nitro groups, cyano groups and -SO 2 R b10 , especially fluorine atoms and trifluoromethyl groups. The base is good.

Rb1中之芳香環,具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的1種以上之電子吸引性基,前述電子吸引性基對芳香環之鍵結位置,除了Rb1中之芳香環為苯環的情況以外,並無限定。 The aromatic ring in R b1 has one or more kinds of electron attracting groups selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 , and the electron attracting group is aromatic The bonding position of the ring is not limited except for the case where the aromatic ring in R b1 is a benzene ring.

鍵結於Rb1中之芳香環的前、述電子吸引性基之數目,可為1個、亦可為2個以上。芳香環上鍵結有複數個前述電子吸引性基時,複數個前述電子吸引性基可為相同亦可 相異。 The number of the electron attracting groups which are bonded to the aromatic ring in R b1 may be one or two or more. When a plurality of the above electron attracting groups are bonded to the aromatic ring, the plurality of the electron attracting groups may be the same or different.

惟,Rb1中之芳香環為苯環時,前述電子吸引性基係鍵結於苯環之至少一方的間位。前述電子吸引性基亦可鍵結於苯環中之兩方的間位。進一步地,除了苯環之間位以外,前述電子吸引性基亦可鍵結於苯環之鄰位及對位的一方或兩方。 However, when the aromatic ring in R b1 is a benzene ring, the electron-attracting group is bonded to at least one of the benzene rings. The electron attracting group may be bonded to the meta position of both of the benzene rings. Further, in addition to the position between the benzene rings, the electron attracting group may be bonded to one or both of the ortho and para positions of the benzene ring.

Rb1中之芳香環,為前述電子吸引性基鍵結於間位之苯環時,相較於前述電子吸引性基未鍵結於間位的苯環而言,(B1)成分不易於阻劑組成物中產生分解,經時安定性優良。 The aromatic ring in R b1 is such that when the electron attracting group is bonded to the meta term benzene ring, the (B1) component is not easily hindered compared to the benzene ring in which the electron attracting group is not bonded to the meta position. Decomposition occurs in the composition of the agent, and the stability is excellent over time.

Rb1為苯環以外之芳香環時,前述電子吸引性基對芳香環之鍵結位置,由微影特性的觀點,較佳不為式(b1)中之硫原子(S)所鍵結的碳原子(定為1位)之鄰接的碳原子(2位)。 When R b1 is an aromatic ring other than a benzene ring, the bonding position of the electron attracting group to the aromatic ring is preferably not bonded by the sulfur atom (S) in the formula (b1) from the viewpoint of lithographic characteristics. Adjacent carbon atoms (position 2) of a carbon atom (defined as 1 position).

Rb1中之芳香環,亦可具有前述電子吸引性基以外之取代基。作為前述電子吸引性基以外之取代基,可列舉例如碳數1~5之烷基等。 The aromatic ring in R b1 may have a substituent other than the above electron attracting group. Examples of the substituent other than the electron-attracting group include an alkyl group having 1 to 5 carbon atoms.

前述式(b1)中,Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環。 In the above formula (b1), R b21 and R b22 each independently represent an electron attracting group which may be selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 . Aromatic ring.

作為Rb21及Rb22中之芳香環,可列舉可分別藉由Rb21、Rb22、與式(b1)中之硫原子(S)而形成雜環構造者。 Examples of the aromatic ring in R b21 and R b22 include a heterocyclic ring structure which can be formed by R b21 and R b22 and a sulfur atom (S) in the formula (b1).

Rb21及Rb22中之-SO2Rb20之Rb20,表示烷基、氟化烷基或芳基,可列舉與前述Rb10相同者。 R b21 and R b22 in the -SO 2 R b20 of R b20, represent an alkyl, aryl or fluorinated alkyl group include the same as those of the aforementioned R b10.

前述式(b1)中,Z表示硫原子、氧原子、羰基或單鍵。此等之中,作為Z,尤以單鍵為佳。 In the above formula (b1), Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. Among these, as Z, a single bond is preferred.

前述式(b1)中,Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。 In the above formula (b1), R b1 and R b21 may be bonded via a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula.

又,Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。 Further, R b1 and R b22 may be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula.

作為(B1)成分之較佳陽離子部,可列舉下述化學式(b1-c)表示之陽離子。 The preferred cationic portion of the component (B1) includes a cation represented by the following chemical formula (b1-c).

[式中,Z表示硫原子、氧原子、羰基或單鍵。Rb01表示選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基。式(b1-c)中存在有複數個Rb01時,該等可互為相同亦可相異。Rb02為碳數1~5之烷基。式(b1-c)中存在有複數個Rb02時,該等可互為相同亦可相異。nb1為0或1~4之整數。nb3及nb5係分別獨立地為0或1~5之整數。nb2為0或1~4之整數。nb4及nb6係分別獨立地為0或1~5之整數。惟,0≦nb1+nb2≦4、0≦nb3+nb4≦5、0 ≦nb5+nb6≦5]。 [wherein, Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. R b01 represents an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 . When a plurality of R b01 are present in the formula (b1-c), the ones may be the same or different from each other. R b02 is an alkyl group having 1 to 5 carbon atoms. When a plurality of R b02 are present in the formula (b1-c), the ones may be the same or different from each other. n b1 is an integer of 0 or 1 to 4. n b3 and n b5 are each independently 0 or an integer of 1 to 5. n b2 is an integer of 0 or 1 to 4. n b4 and n b6 are each independently 0 or an integer of 1 to 5. However, 0≦n b1 +n b2 ≦4, 0≦n b3 +n b4 ≦5,0 ≦n b5 +n b6 ≦5].

前述式(b1-c)中,於硫原子、氧原子、羰基或單鍵之中,Z尤以單鍵為佳。 In the above formula (b1-c), among the sulfur atom, the oxygen atom, the carbonyl group or the single bond, Z is preferably a single bond.

Rb01中之電子吸引性基,於由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群之中,尤以氟原子、三氟甲基為佳。 The electron attracting group in R b01 is preferably a fluorine atom or a trifluoromethyl group among a group of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group and -SO 2 R b10 .

Rb02,於碳數1~5之烷基之中,尤以甲基、乙基為佳。 R b02 is preferably a methyl group or an ethyl group among the alkyl groups having 1 to 5 carbon atoms.

nb1,較佳為0或1。 n b1 , preferably 0 or 1.

nb3及nb5,分別較佳為0、1或2;更佳為0。 n b3 and n b5 are preferably 0, 1, or 2, respectively; more preferably 0.

nb2,較佳為0或1,更佳為0。 n b2 is preferably 0 or 1, more preferably 0.

nb4及nb6,分別較佳為0、1或2;更佳為0。 n b4 and n b6 are preferably 0, 1, or 2, respectively; more preferably 0.

以下記載通式(b1-c)表示之陽離子部之具體例子。 Specific examples of the cation portion represented by the formula (b1-c) are described below.

≪(B1)成分之陰離子部≫ Anion part of ≪(B1) component≫

前述式(b1)中,X-表示相對陰離子(惟,BF4 -除外)。 In the above formula (b1), X - represents a relative anion (except for BF 4 - ).

作為X-,並無特殊限制,可適當使用作為阻劑組成物用之酸產生劑成分的陰離子部所已知的陰離子。 As X -, is not particularly limited, and the anion portion may be suitably used as the acid-generating agent component with the resist composition of the known anion.

例如,作為X-,可列舉下述通式(b1-a1)表示之陰離子、通式(b1-a2)表示之陰離子或通式(b1-a3)表示之陰離子。 For example, examples of X - include an anion represented by the following formula (b1-a1), an anion represented by the formula (b1-a2), or an anion represented by the formula (b1-a3).

[式中,R101、R104~R108係分別獨立地為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基。R104、R105,亦可互相鍵結而形成環。R102為氟原子或碳數1~5之氟化烷基。Y101為單鍵或包含氧原子之2價連結基。V101~V103係分別獨立地為單鍵、伸烷基或氟化伸烷基。L101~L102係分別獨立地為單鍵或氧原子。L103~L105係分別獨立地為單鍵、-CO-或-SO2-]。 [In the formula, R 101 and R 104 to R 108 are each independently a ring-form group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. R 104 and R 105 may also be bonded to each other to form a ring. R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. Y 101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 are each independently a single bond, an alkylene group or a fluorinated alkyl group. L 101 ~ L 102 are each independently a single bond or an oxygen atom. L 103 ~ L 105 are each independently a single bond, -CO- or -SO 2 -].

.通式(b1-a1)表示之陰離子 . Anion represented by the formula (b1-a1)

式(b1-a1)中,R101為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基。 In the formula (b1-a1), R 101 is a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent.

可具有取代基之環式基: a cyclic group which may have a substituent:

該環式基較佳為環狀之烴基,該環狀之烴基,可為芳香族烴基、亦可為脂肪族烴基。脂肪族烴基,意指不具有芳香族性之烴基。又,脂肪族烴基,可為飽和、亦可為不 飽和,通常較佳為飽和。 The cyclic group is preferably a cyclic hydrocarbon group, and the cyclic hydrocarbon group may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group. The aliphatic hydrocarbon group means a hydrocarbon group which does not have aromaticity. Further, the aliphatic hydrocarbon group may be saturated or not Saturated, usually preferably saturated.

R101中之芳香族烴基,為具有芳香環之烴基。該芳香族烴基之碳數較佳為3~30、更佳為5~30、又更佳為5~20、特佳為6~15、最佳為6~10。惟,該碳數不包含取代基中之碳數。 The aromatic hydrocarbon group in R 101 is a hydrocarbon group having an aromatic ring. The carbon number of the aromatic hydrocarbon group is preferably from 3 to 30, more preferably from 5 to 30, still more preferably from 5 to 20, particularly preferably from 6 to 15, most preferably from 6 to 10. However, the carbon number does not include the carbon number in the substituent.

R101中之芳香族烴基所具有的芳香環,具體而言,可列舉苯、茀、萘、蒽、菲、聯苯、或構成此等芳香環的碳原子之一部分被雜原子取代之芳香族雜環等。作為芳香族雜環中之雜原子,可列舉氧原子、硫原子、氮原子等。 Specific examples of the aromatic ring of the aromatic hydrocarbon group in R 101 include benzene, anthracene, naphthalene, anthracene, phenanthrene, biphenyl, or an aromatic group in which one of the carbon atoms constituting the aromatic ring is substituted with a hetero atom. Heterocyclic and the like. Examples of the hetero atom in the aromatic hetero ring include an oxygen atom, a sulfur atom, and a nitrogen atom.

作為R101中之芳香族烴基,具體而言,可列舉自前述芳香環去除1個氫原子而得之基(芳基:例如、苯基、萘基等);前述芳香環的1個氫原子被伸烷基取代而得之基(例如苄基、苯乙基、1-萘基甲基、2-萘基甲基、1-萘基乙基、2-萘基乙基等之芳基烷基等)等。前述伸烷基(芳基烷基中之烷基鏈)之碳數,較佳為1~4、更佳為1~2、特佳為1。 Specific examples of the aromatic hydrocarbon group in R 101 include a group obtained by removing one hydrogen atom from the aromatic ring (aryl group: for example, a phenyl group or a naphthyl group); and one hydrogen atom of the above aromatic ring An alkyl group substituted with an alkyl group (for example, benzyl, phenethyl, 1-naphthylmethyl, 2-naphthylmethyl, 1-naphthylethyl, 2-naphthylethyl, etc.) Base, etc.). The carbon number of the alkylene group (alkyl chain in the arylalkyl group) is preferably from 1 to 4, more preferably from 1 to 2, particularly preferably 1.

R101中之環狀之脂肪族烴基,可列舉構造中包含環之脂肪族烴基。 The cyclic aliphatic hydrocarbon group in R 101 may, for example, be an aliphatic hydrocarbon group containing a ring in the structure.

該構造中包含環之脂肪族烴基,可列舉脂環式烴基(自脂肪族烴環去除1個氫原子而得之基)、脂環式烴基鍵結於直鏈狀或分支鏈狀之脂肪族烴基末端而得之基、脂環式烴基存在於直鏈狀或分支鏈狀之脂肪族烴基途中之基等。 The aliphatic hydrocarbon group containing a ring in the structure includes an alicyclic hydrocarbon group (a group obtained by removing one hydrogen atom from an aliphatic hydrocarbon ring), and an alicyclic hydrocarbon group bonded to a linear or branched aliphatic group. The group derived from the terminal of the hydrocarbon group or the alicyclic hydrocarbon group is present in the group in the middle of the linear or branched aliphatic hydrocarbon group.

前述脂環式烴基,碳數較佳為3~20、更佳為3~12。 The alicyclic hydrocarbon group preferably has a carbon number of from 3 to 20, more preferably from 3 to 12.

前述脂環式烴基,可為多環式基、亦可為單環式基。作為單環式之脂環式烴基,較佳為自單環烷中去除1個以上的氫原子而得之基。作為該單環烷,較佳為碳數3~6者,具體而言可列舉環戊烷、環己烷等。作為多環式之脂環式烴基,較佳為自多環烷中去除1個以上的氫原子而得之基,作為該多環烷,較佳為碳數7~30者。其中,作為該多環烷,尤更佳為具有金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之交聯環系的多環式骨架之多環烷;具有具備類固醇骨架的環式基等之縮合環系的多環式骨架之多環烷。 The alicyclic hydrocarbon group may be a polycyclic group or a monocyclic group. The monocyclic alicyclic hydrocarbon group is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane. The monocycloalkane is preferably a carbon number of 3 to 6, and specific examples thereof include cyclopentane and cyclohexane. The polycyclic alicyclic hydrocarbon group is preferably one obtained by removing one or more hydrogen atoms from the polycycloalkane, and the polycycloalkane is preferably a carbon number of 7 to 30. In particular, the polycycloalkane is more preferably a polycyclic alkane having a polycyclic skeleton of a crosslinked ring system such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane; A polycyclic alkane having a polycyclic skeleton having a condensed ring system such as a cyclic group of a steroid skeleton.

其中,作為R101中之環狀之脂肪族烴基,尤以自單環烷或多環烷去除1個以上的氫原子而得之基為佳;更佳為自多環烷去除1個氫原子而得之基;特佳為金剛烷基、降莰基;最佳為金剛烷基。 In particular, the cyclic aliphatic hydrocarbon group in R 101 is preferably a group obtained by removing one or more hydrogen atoms from a monocycloalkane or a polycycloalkane; more preferably, one hydrogen atom is removed from the polycycloalkane. And the base; especially good is adamantyl, thiol group; the best is adamantyl.

可鍵結於脂環式烴基的直鏈狀之脂肪族烴基,碳數較佳為1~10、更佳為1~6、又更佳為1~4、最佳為1~3。作為直鏈狀之脂肪族烴基,較佳為直鏈狀之伸烷基,具體而言,可列舉亞甲基[-CH2-]、伸乙基[-(CH2)2-]、三亞甲基[-(CH2)3-]、四亞甲基[-(CH2)4-]、五亞甲基[-(CH2)5-]等。 The linear aliphatic hydrocarbon group which may be bonded to the alicyclic hydrocarbon group has a carbon number of preferably 1 to 10, more preferably 1 to 6, more preferably 1 to 4, most preferably 1 to 3. The linear aliphatic hydrocarbon group is preferably a linear alkyl group, and specific examples thereof include a methylene group [-CH 2 -], an exoethyl group [-(CH 2 ) 2 -], and a Sanya. Methyl [-(CH 2 ) 3 -], tetramethylene [-(CH 2 ) 4 -], pentamethylene [-(CH 2 ) 5 -], and the like.

可鍵結於脂環式烴基的分支鏈狀之脂肪族烴基,碳數較佳為2~10、更佳為3~6、又更佳為3或4、最佳為3。作為分支鏈狀之脂肪族烴基,較佳為分支鏈狀之伸烷基,具體而言,可列舉-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2- 、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;-CH(CH3)CH2-、-CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-、-C(CH2CH3)2-CH2-等之烷基伸乙基;-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基等之烷基伸烷基等。作為烷基伸烷基中之烷基,較佳為碳數1~5之直鏈狀之烷基。 The branched aliphatic hydrocarbon group which may be bonded to the alicyclic hydrocarbon group has a carbon number of preferably 2 to 10, more preferably 3 to 6, more preferably 3 or 4, most preferably 3. The branched aliphatic hydrocarbon group is preferably a branched alkyl group, and specifically, -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C(CH 3 ) Alkyl methylene groups of 2 - , -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 -, etc. ;-CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 -, -CH(CH 2 CH 3 )CH 2 -, -C( CH 2 CH 3) 2 -CH 2 - , etc. extending ethyl group; -CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - , etc. trimethylene group; -CH (CH 3 ) an alkylalkylene group such as an alkyltetramethylene group such as CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like. The alkyl group in the alkylalkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.

又,R101中之環狀之烴基,亦可如雜環等般含有雜原子。具體而言,可列舉前述通式(a2-r-1)~(a2-r-7)分別表示之含內酯之環式基、前述通式(a5-r-1)~(a5-r-4)分別表示之含-SO2-之環式基、其他上述之化學式(r-hr-1)~(r-hr-16)分別表示之雜環式基。 Further, the cyclic hydrocarbon group in R 101 may contain a hetero atom as in the case of a hetero ring or the like. Specific examples thereof include a lactone-containing cyclic group represented by the above formula (a2-r-1) to (a2-r-7), and the above formula (a5-r-1) to (a5-r). -4) a ring-form group containing -SO 2 - and a heterocyclic group represented by the other chemical formulas (r-hr-1) to (r-hr-16), respectively.

作為R101之環式基中之取代基,可列舉例如烷基、烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基等。 Examples of the substituent in the cyclic group of R 101 include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group and the like.

作為取代基之烷基,較佳為碳數1~5之烷基;最佳為甲基、乙基、丙基、n-丁基、tert-丁基。 The alkyl group as a substituent is preferably an alkyl group having 1 to 5 carbon atoms; most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group or a tert-butyl group.

作為取代基之烷氧基,較佳為碳數1~5之烷氧基;更佳為甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基;最佳為甲氧基、乙氧基。 The alkoxy group as a substituent is preferably an alkoxy group having 1 to 5 carbon atoms; more preferably a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group or an n-butoxy group. Tert-butoxy; most preferred is methoxy, ethoxy.

作為取代基之鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,較佳為氟原子。 The halogen atom as a substituent may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

作為取代基之鹵化烷基,可列舉碳數1~5之烷基、例 如甲基、乙基、丙基、n-丁基、tert-丁基等之氫原子之一部分或全部被前述鹵素原子取代而得之基。 Examples of the halogenated alkyl group as a substituent include an alkyl group having 1 to 5 carbon atoms. A group obtained by partially or completely replacing one of hydrogen atoms such as a methyl group, an ethyl group, a propyl group, an n-butyl group, and a tert-butyl group with the above halogen atom.

作為取代基之羰基,為取代構成環狀烴基的亞甲基(-CH2-)之基。 The carbonyl group as a substituent is a group substituted with a methylene group (-CH 2 -) constituting a cyclic hydrocarbon group.

可具有取代基之鏈狀之烷基: a chain-like alkyl group which may have a substituent:

作為R101之鏈狀之烷基,可為直鏈狀或分支鏈狀之任意者。 The chain alkyl group of R 101 may be any of a linear chain or a branched chain.

作為直鏈狀之烷基,碳數較佳為1~20、更佳為1~15、最佳為1~10。具體而言,可列舉例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一烷基、十二烷基、十三烷基、異十三烷基、十四烷基、十五烷基、十六烷基、異十六烷基、十七烷基、十八烷基、十九烷基、二十烷基、二十一烷基、二十二烷基等。 The linear alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, most preferably 1 to 10 carbon atoms. Specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, an undecyl group, a dodecyl group, and a tridecyl group. , isotridecyl, tetradecyl, pentadecyl, hexadecyl, isohexadecyl, heptadecyl, octadecyl, nonadecyl, eicosyl, twentieth Monoalkyl, behenyl or the like.

作為分支鏈狀之烷基,碳數較佳為3~20、更佳為3~15、最佳為3~10。具體而言,可列舉例如1-甲基乙基、1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等。 The alkyl group having a branched chain shape preferably has a carbon number of 3 to 20, more preferably 3 to 15, and most preferably 3 to 10. Specifically, for example, 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1 -ethylbutyl, 2-ethylbutyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, and the like.

可具有取代基之鏈狀之烯基: A chain-like alkenyl group which may have a substituent:

作為R101之鏈狀之烯基,可為直鏈狀或分支鏈狀之任意者,碳數較佳為2~10、更佳為2~5、又更佳為2~4、特 佳為3。作為直鏈狀之烯基,可列舉例如乙烯基、丙烯基(烯丙基)、丁烯基等。作為分支鏈狀之烯基,可列舉例如1-甲基乙烯基、2-甲基乙烯基、1-甲基丙烯基、2-甲基丙烯基等。 The chain-like alkenyl group of R 101 may be any of a linear chain or a branched chain, and the carbon number is preferably 2 to 10, more preferably 2 to 5, still more preferably 2 to 4, and particularly preferably 3. Examples of the linear alkenyl group include a vinyl group, a propenyl group (allyl group), and a butenyl group. Examples of the branched alkenyl group include 1-methylvinyl group, 2-methylvinyl group, 1-methylpropenyl group, and 2-methylpropenyl group.

作為鏈狀之烯基,於上述之中,尤以直鏈狀之烯基為佳;更佳為乙烯基、丙烯基;特佳為乙烯基。 The chain-like alkenyl group is preferably a linear alkenyl group among the above; more preferably a vinyl group or a propylene group; and particularly preferably a vinyl group.

作為R101之鏈狀之烷基或烯基中之取代基,可列舉例如烷氧基、鹵素原子、鹵化烷基、羥基、羰基、硝基、胺基、上述R101中之環式基等。 Examples of the substituent in the chain alkyl group or alkenyl group of R 101 include an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carbonyl group, a nitro group, an amine group, and a ring group in the above R 101 . .

上述之中,R101尤以可具有取代基之環式基為佳;更佳為可具有取代基之環狀烴基。更具體而言,較佳為自苯基、萘基、多環烷中去除1個以上的氫原子而得之基;以前述通式(a2-r-1)~(a2-r-7)分別表示之含內酯之環式基;以前述通式(a5-r-1)~(a5-r-4)分別表示之含-SO2-之環式基等。 Among the above, R 101 is particularly preferably a cyclic group which may have a substituent; more preferably a cyclic hydrocarbon group which may have a substituent. More specifically, it is preferably a group obtained by removing one or more hydrogen atoms from a phenyl group, a naphthyl group or a polycycloalkane; and the above formula (a2-r-1) to (a2-r-7) The cyclic group containing a lactone, and the ring group containing -SO 2 - represented by the above formula (a5-r-1) to (a5-r-4), respectively.

式(b1-a1)中,Y101為單鍵或包含氧原子之2價連結基。 In the formula (b1-a1), Y 101 is a single bond or a divalent linking group containing an oxygen atom.

Y101為包含氧原子之2價連結基時,該Y101亦可含有氧原子以外之原子。作為氧原子以外之原子,可列舉例如碳原子、氫原子、硫原子、氮原子等。 When Y101 is a divalent linking group containing an oxygen atom, the Y101 may further contain an atom other than an oxygen atom. Examples of the atom other than the oxygen atom include a carbon atom, a hydrogen atom, a sulfur atom, and a nitrogen atom.

作為包含氧原子之2價連結基,可列舉例如氧原子(醚鍵:-O-)、酯鍵(-C(=O)-O-)、氧羰基(-O-C(=O)-)、醯胺鍵(-C(=O)-NH-)、羰基(-C(=O)-)、碳酸酯鍵(-O-C(=O)-O-)等之非烴系的含有氧原子之連結基;該非烴 系的含有氧原子之連結基與伸烷基的組合等。亦可於該組合上進一步連結有磺醯基(-SO2-)。作為該包含氧原子之2價連結基,可列舉例如下述通式(y-al-1)~(y-al-7)分別表示之連結基。 Examples of the divalent linking group containing an oxygen atom include an oxygen atom (ether bond: -O-), an ester bond (-C(=O)-O-), and an oxycarbonyl group (-OC(=O)-). a non-hydrocarbon-containing oxygen atom such as a guanamine bond (-C(=O)-NH-), a carbonyl group (-C(=O)-), or a carbonate bond (-OC(=O)-O-) a linking group; a combination of a non-hydrocarbon-based linking group containing an oxygen atom and an alkylene group. Further, a sulfonyl group (-SO 2 -) may be further bonded to the combination. The divalent linking group containing an oxygen atom may, for example, be a linking group represented by the following general formula (y-al-1) to (y-al-7).

[式中,V’101為單鍵或碳數1~5之伸烷基,V’102為碳數1~30之2價飽和烴基]。 [In the formula, V' 101 is a single bond or an alkylene group having 1 to 5 carbon atoms, and V' 102 is a divalent saturated hydrocarbon group having 1 to 30 carbon atoms].

V’102中之2價飽和烴基,較佳為碳數1~30之伸烷基、更佳為碳數1~10之伸烷基、又更佳為碳數1~5之伸烷基。 The divalent saturated hydrocarbon group in V' 102 is preferably an alkylene group having 1 to 30 carbon atoms, more preferably an alkylene group having 1 to 10 carbon atoms, more preferably an alkylene group having 1 to 5 carbon atoms.

作為V’101及V’102中之伸烷基,可為直鏈狀之伸烷基亦可為分支鏈狀之伸烷基,較佳為直鏈狀之伸烷基。 As V '101 and V' 102 in the alkylene may be straight-chain alkylene group may also be the extension of the branched chain alkyl group, preferably straight chain alkylene of.

作為V’101及V’102中之伸烷基,具體而言,可列舉亞甲基[-CH2-];-CH(CH3)-、-CH(CH2CH3)-、-C(CH3)2-、-C(CH3)(CH2CH3)-、-C(CH3)(CH2CH2CH3)-、-C(CH2CH3)2-等之烷基亞甲基;伸乙基[-CH2CH2-];-CH(CH3)CH2-、 -CH(CH3)CH(CH3)-、-C(CH3)2CH2-、-CH(CH2CH3)CH2-等之烷基伸乙基;三亞甲基(n-伸丙基)[-CH2CH2CH2-];-CH(CH3)CH2CH2-、-CH2CH(CH3)CH2-等之烷基三亞甲基;四亞甲基[-CH2CH2CH2CH2-];-CH(CH3)CH2CH2CH2-、-CH2CH(CH3)CH2CH2-等之烷基四亞甲基;五亞甲基[-CH2CH2CH2CH2CH2-]等。 Examples of the alkylene group in V' 101 and V' 102 include a methylene group [-CH 2 -]; -CH(CH 3 )-, -CH(CH 2 CH 3 )-, -C. (CH 3 ) 2 -, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 3 )-, -C(CH 2 CH 3 ) 2 - or the like Methyl group; exoethyl [-CH 2 CH 2 -]; -CH(CH 3 )CH 2 -, -CH(CH 3 )CH(CH 3 )-, -C(CH 3 ) 2 CH 2 - , -CH(CH 2 CH 3 )CH 2 - or the like alkyl group ethyl; trimethylene (n-propyl) [-CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 - or the like alkyl trimethylene; tetramethylene [-CH 2 CH 2 CH 2 CH 2 -]; -CH(CH 3 )CH 2 CH 2 CH 2 -, -CH 2 CH(CH 3 )CH 2 CH 2 - or the like alkyltetramethylene; pentamethylene [-CH 2 CH 2 CH 2 CH 2 CH 2 -].

又,V’101或V’102中之前述伸烷基中之一部分的亞甲基,亦可被碳數5~10之2價脂肪族環式基取代。該脂肪族環式基,較佳為自前述式(a1-r-1)中的Ra’3之環狀之脂肪族烴基(單環式之脂肪族烴基、多環式之脂肪族烴基)進一步去除1個氫原子而得之2價基;更佳為伸環己基、1,5-伸金剛烷基或2,6-伸金剛烷基。 Further, a methylene group of a part of the alkylene group in V' 101 or V' 102 may be substituted with a divalent aliphatic cyclic group having 5 to 10 carbon atoms. The aliphatic cyclic group is preferably a cyclic aliphatic hydrocarbon group (monocyclic aliphatic hydrocarbon group or polycyclic aliphatic hydrocarbon group) of Ra' 3 in the above formula (a1-r-1). A divalent group obtained by removing one hydrogen atom; more preferably a cyclohexyl group, a 1,5-adamantyl group or a 2,6-adamantyl group.

作為Y101,較佳為包含酯鍵之2價連結基、或包含醚鍵之2價連結基;更佳為上述式(y-al-1)~(y-al-5)分別表示之連結基。 Y 101 is preferably a divalent linking group containing an ester bond or a divalent linking group containing an ether bond; more preferably, the above formula (y-al-1) to (y-al-5) are respectively linked. base.

式(b1-a1)中,V101為單鍵、伸烷基或氟化伸烷基。V101中之伸烷基、氟化伸烷基,較佳為碳數1~4。作為V101中之氟化伸烷基,可列舉V101中之伸烷基的氫原子之一部分或全部被氟原子取代之基。其中,V101尤以單鍵、或碳數1~4之氟化伸烷基為佳。 In the formula (b1-a1), V 101 is a single bond, an alkylene group or a fluorinated alkyl group. The alkylene group or the fluorinated alkyl group in V 101 is preferably a carbon number of 1 to 4. 101 V as in the fluorinated alkylene, V may include a portion of hydrogen atoms in the alkylene group of 101 or all substituted by fluorine atoms of the group. Among them, V 101 is preferably a single bond or a fluorinated alkyl group having 1 to 4 carbon atoms.

式(b1-a1)中,R102為氟原子或碳數1~5之氟化烷基。R102較佳為氟原子或碳數1~5之全氟烷基、更佳為氟原子。 In the formula (b1-a1), R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. R 102 is preferably a fluorine atom or a perfluoroalkyl group having 1 to 5 carbon atoms, more preferably a fluorine atom.

作為前述式(b1-a1)表示之陰離子部之具體例 子,例如Y101為單鍵時,可列舉三氟甲烷磺酸酯陰離子或全氟丁烷磺酸酯陰離子等之氟化烷基磺酸酯陰離子;Y101為包含氧原子之2價連結基時,可列舉下述式(an-1)~(an-3)之任一者表示之陰離子。 Specific examples of the anion moiety represented by the above formula (b1-a1) include, for example, a single bond of Y 101 , and a fluorinated alkylsulfonic acid such as a trifluoromethanesulfonate anion or a perfluorobutanesulfonate anion. When the ester 101 is a divalent linking group containing an oxygen atom, an anion represented by any one of the following formulas (an-1) to (an-3) may be mentioned.

[式中,R”101為可具有取代基之脂肪族環式基、前述式(r-hr-1)~(r-hr-6)分別表示之基、或可具有取代基之鏈狀之烷基;R”102為可具有取代基之脂肪族環式基、前述通式(a2-r-1)~(a2-r-7)分別表示之含內酯之環式基、或前述通式(a5-r-1)~(a5-r-4)分別表示之含-SO2-之環式基;R”103為可具有取代基之芳香族環式基、可具有取代基之脂肪族環式基、或可具有取代基之鏈狀之烯基;v”係分別獨立地為0~3之整數,q”係分別獨立地為1~20之整數,t”為1~3之整數,n”為0或1]。 [wherein R" 101 is an aliphatic cyclic group which may have a substituent, a group represented by the above formula (r-hr-1) to (r-hr-6), or a chain which may have a substituent An alkyl group; R" 102 is an aliphatic cyclic group which may have a substituent, a cyclic group containing a lactone represented by the above formula (a2-r-1) to (a2-r-7), or the aforementioned The formula (a5-r-1) to (a5-r-4) respectively represent a ring-form group containing -SO 2 -; R" 103 is an aromatic ring group which may have a substituent, and a fat which may have a substituent a cyclic group-based group or a chain-like alkenyl group which may have a substituent; the v" system is independently an integer of 0 to 3, and the q" system is independently an integer of 1 to 20, and t" is 1 to 3 Integer, n" is 0 or 1].

R”101、R”102及R”103之可具有取代基之脂肪族環式基,較佳為作為前述R101中之環狀之脂肪族烴基所例示之基。作為前述取代基,可列舉與可取代R101中之環狀之脂肪族烴基的取代基為相同者。 An aliphatic cyclic group which may have a substituent of R" 101 , R" 102 and R" 103 , and is preferably exemplified as the cyclic aliphatic hydrocarbon group in the above R101 . The substituent is the same as the substituent of the cyclic aliphatic hydrocarbon group which may be substituted for R 101 .

R”103中之可具有取代基之芳香族環式基,較佳為作為前述R101中之環狀烴基中之芳香族烴基所例示之基。作為前述取代基,可列舉與可取代R101中之該芳香族烴基的取代基為相同者。 The aromatic cyclic group which may have a substituent in R" 103 , preferably exemplified as the aromatic hydrocarbon group in the cyclic hydrocarbon group in the above R 101. As the above substituent, a substitutable R 101 may be mentioned. The substituent of the aromatic hydrocarbon group in the same is the same.

R”101中之可具有取代基之鏈狀之烷基,較佳為作為前述R101中之鏈狀之烷基所例示之基。R”103中之可具有取代基之鏈狀之烯基,較佳為作為前述R101中之鏈狀之烯基所例示之基。 A chain-like alkyl group which may have a substituent in R" 101 , preferably a group exemplified as the chain-like alkyl group in the above R 101. A chain-like alkenyl group which may have a substituent in R" 103 It is preferably exemplified as the chain-like alkenyl group in the above R 101 .

.通式(b1-a2)表示之陰離子 . Anion represented by the formula (b1-a2)

式(b1-a2)中,R104、R105係分別獨立地為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,可分別列舉與式(b1-a1)中之R101相同者。惟,R104、R105,亦可互相鍵結而形成環。 In the formula (b1-a2), R 104 and R 105 are each independently a ring group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. The same as R 101 in the formula (b1-a1) can be listed separately. However, R 104 and R 105 may be bonded to each other to form a ring.

R104、R105,較佳為可具有取代基之鏈狀之烷基;更佳為直鏈狀或分支鏈狀之烷基、或直鏈狀或分支鏈狀之氟化烷基。 R 104 and R 105 are preferably a chain-like alkyl group which may have a substituent; more preferably a linear or branched alkyl group or a linear or branched fluorinated alkyl group.

該鏈狀之烷基之碳數,較佳為1~10、更佳為碳數1~7、又更佳為碳數1~3。R104、R105的鏈狀之烷基之碳數,於上述碳數之範圍內,由於對阻劑用溶劑之溶解性亦為良好等之理由,係越小越佳。又,於R104、R105的鏈狀之烷基當中,被氟原子取代之氫原子的數目越多,酸的強度越增強,又,對200nm以下之高能量光或電子束的透明性會提高,故較佳。前述鏈狀之烷基中的氟原子之比 例,亦即氟化率,較佳為70~100%、更佳為90~100%、最佳為全部氫原子被氟原子取代之全氟烷基。 The number of carbon atoms of the chain alkyl group is preferably from 1 to 10, more preferably from 1 to 7, and more preferably from 1 to 3. The carbon number of the chain-like alkyl group of R 104 and R 105 is preferably in the range of the above carbon number because the solubility in the solvent for the resist is also good. Further, among the chain-like alkyl groups of R 104 and R 105 , the more the number of hydrogen atoms substituted by fluorine atoms, the stronger the strength of the acid, and the transparency to high-energy light or electron beams of 200 nm or less It is better to improve. The proportion of the fluorine atom in the chain-like alkyl group, that is, the fluorination ratio, is preferably 70 to 100%, more preferably 90 to 100%, and most preferably a perfluoroalkyl group in which all hydrogen atoms are replaced by fluorine atoms. .

式(b1-a2)中,V102、V103係分別獨立地為單鍵、伸烷基、或氟化伸烷基,分別可列舉與式(b1-a1)中之V101相同者。 In the formula (b1-a2), V 102 and V 103 are each independently a single bond, an alkylene group or a fluorinated alkyl group, and each of them is the same as V 101 in the formula (b1-a1).

式(b1-a2)中,L101、L102係分別獨立地為單鍵或氧原子。 In the formula (b1-a2), L 101 and L 102 are each independently a single bond or an oxygen atom.

.通式(b1-a3)表示之陰離子 . Anion represented by the formula (b1-a3)

式(b1-a3)中,R106~R108係分別獨立地為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,分別可列舉與式(b1-a1)中之R101相同者。 In the formula (b1-a3), R 106 to R 108 are each independently a ring group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. The same as R 101 in the formula (b1-a1) can be cited .

式(b1-a3)中,L103~L105係分別獨立地為單鍵、-CO-或-SO2-。 In the formula (b1-a3), L 103 to L 105 are each independently a single bond, -CO- or -SO 2 -.

前述式(b1)中,X-亦可為鹵素陰離子。此處,作為鹵素陰離子,可列舉氟化物離子、氯化物離子、溴化物離子、碘化物離子等。 In the above formula (b1), X - may also be a halogen anion. Here, examples of the halogen anion include a fluoride ion, a chloride ion, a bromide ion, and an iodide ion.

上述之中,作為(B1)成分之陰離子部,尤以通式(b1-a1)表示之陰離子為佳。其中尤以上述通式(an-1)~(an-3)之任一者表示之陰離子更佳、又更佳為通式(an-1)或(an-2)之任一者表示之陰離子。 Among the above, the anion portion of the component (B1) is preferably an anion represented by the formula (b1-a1). In particular, the anion represented by any one of the above formulas (an-1) to (an-3) is more preferably, and more preferably expressed by any of the formula (an-1) or (an-2). Anion.

列舉適合的(B1)成分之具體例子如下。 Specific examples of the suitable (B1) components are listed below.

本實施形態之阻劑組成物中,(B1)成分,可1種單獨使用、亦可合併使用2種以上。 In the resist composition of the present embodiment, the component (B1) may be used alone or in combination of two or more.

本實施形態之阻劑組成物中,(B1)成分之含量,相對於(A)成分100質量份而言,較佳為1~80質量份、更佳為1~50質量份、又更佳為1~30質量份。 In the resist composition of the present embodiment, the content of the component (B1) is preferably from 1 to 80 parts by mass, more preferably from 1 to 50 parts by mass, even more preferably 100 parts by mass of the component (A). It is 1 to 30 parts by mass.

(B1)成分之含量為前述較佳之下限值以上時,於阻劑圖型形成時,感度、CDU、圖型倒塌、解像性能、LWR(線寬粗度)、形狀等之微影特性會更加提高。另一方面,若為較佳之上限值以下時,將阻劑組成物之各成分溶解於有機溶劑時,容易得到均勻的溶液,作為阻劑組成物之保存安定性會更加提高。 When the content of the component (B1) is at least the above-mentioned lower limit, the lithography characteristics of sensitivity, CDU, pattern collapse, resolution, LWR (line width), shape, etc., when the resist pattern is formed Will be more improved. On the other hand, when it is a preferable upper limit or less, when the components of the resist composition are dissolved in an organic solvent, a uniform solution is easily obtained, and the storage stability as a resist composition is further improved.

<任意成分> <arbitrary component>

本實施形態之阻劑組成物,亦可進一步含有上述(A)成分及(B1)成分以外之成分(任意成分)。 The resist composition of the present embodiment may further contain components (optional components) other than the components (A) and (B1).

作為該任意成分,可列舉例如以下所示之(B2)成分、(D)成分、(E)成分、(F)成分、(S)成分等。 Examples of the optional component include (B2) component, (D) component, (E) component, (F) component, and (S) component shown below.

≪(B2)成分:酸產生劑成分≫ ≪(B2) component: acid generator component ≫

本實施形態之阻劑組成物,於不損及本發明之效果的範圍內,亦可含有(B1)成分以外之酸產生劑成分(以下稱為「(B2)成分」)。 The resist composition of the present embodiment may contain an acid generator component other than the component (B1) (hereinafter referred to as "(B2) component") within a range that does not impair the effects of the present invention.

作為(B2)成分,並無特殊限定,可使用至今為止作為化學增幅型阻劑組成物用的酸產生劑所提出者。 The component (B2) is not particularly limited, and those which have hitherto been used as an acid generator for a chemically amplified resist composition can be used.

作為如此之酸產生劑,可列舉錪鹽或鋶鹽等之鎓鹽系酸產生劑;肟磺酸酯系酸產生劑;雙烷基或雙芳基磺醯基重氮甲烷類、聚(雙磺醯基)重氮甲烷類等之重氮甲烷系酸產生劑;磺酸硝基苄酯系酸產生劑、磺酸亞胺酯系酸產生劑、二碸系酸產生劑等多種者。 Examples of such an acid generator include a phosphonium salt generator such as a phosphonium salt or a phosphonium salt; an oxime sulfonate acid generator; a dialkyl or bisarylsulfonyldiazomethane, poly (double) A diazomethane acid generator such as a sulfonyl group, a diazomethane or the like; a nitrobenzyl sulfonate acid generator, a sulfonate ester acid generator, a diterpene acid generator, and the like.

作為鎓鹽系酸產生劑,可列舉例如下述通式(b-1)表示之化合物(以下亦稱為「(b-1)成分」)、通式(b-2)表示之化合物(以下亦稱為「(b-2)成分」)或通式(b-3)表示之化合物(以下亦稱為「(b-3)成分」)。 The guanidine-based acid generator may, for example, be a compound represented by the following formula (b-1) (hereinafter also referred to as "(b-1) component") or a compound represented by the formula (b-2) (hereinafter Also known as "(b-2) component") or a compound represented by the general formula (b-3) (hereinafter also referred to as "(b-3) component").

[式中,R101、R104~R108係分別獨立地為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基。R104、R105,亦可互相鍵結而形成環。R102 為氟原子或碳數1~5之氟化烷基。Y101為單鍵或包含氧原子之2價連結基。V101~V103係分別獨立地為單鍵、伸烷基或氟化伸烷基。L101~L102係分別獨立地為單鍵或氧原子。L103~L105係分別獨立地為單鍵、-CO-或-SO2-。m為1以上之整數,M’m+為m價之鎓陽離子]。 [In the formula, R 101 and R 104 to R 108 are each independently a ring-form group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. R 104 and R 105 may also be bonded to each other to form a ring. R 102 is a fluorine atom or a fluorinated alkyl group having 1 to 5 carbon atoms. Y 101 is a single bond or a divalent linking group containing an oxygen atom. V 101 to V 103 are each independently a single bond, an alkylene group or a fluorinated alkyl group. L 101 ~ L 102 are each independently a single bond or an oxygen atom. L 103 ~ L 105 are each independently a single bond, -CO- or -SO 2 -. m is an integer of 1 or more, and M' m+ is an m-valent ruthenium cation].

{陰離子部} {anion}

(b-1)成分之陰離子部,係與上述通式(b1-a1)表示之陰離子相同。 The anion portion of the component (b-1) is the same as the anion represented by the above formula (b1-a1).

(b-2)成分之陰離子部,係與上述通式(b1-a2)表示之陰離子相同。 The anion portion of the component (b-2) is the same as the anion represented by the above formula (b1-a2).

(b-3)成分之陰離子部,係與上述通式(b1-a3)表示之陰離子相同。 The anion portion of the component (b-3) is the same as the anion represented by the above formula (b1-a3).

{陽離子部} {cation part}

前述式(b-1)、式(b-2)、式(b-3)中,M’m+表示m價之鎓陽離子,較佳為鋶陽離子、錪陽離子。 In the above formula (b-1), formula (b-2), and formula (b-3), M' m+ represents a m-valent phosphonium cation, and is preferably a phosphonium cation or a phosphonium cation.

m為1以上之整數。 m is an integer of 1 or more.

作為較佳之陽離子部((M’m+)1/m),可列舉下述通式(ca-1)~(ca-4)分別表示之有機陽離子。 The preferred cationic moiety ((M' m+ ) 1/m ) is an organic cation represented by the following general formulae (ca-1) to (ca-4).

[式中,R201~R207、及R211~R212係分別獨立地表示可具有取代基之芳基、烷基或烯基。R201~R203、R206~R207、R211~R212,亦可互相鍵結並與式中之硫原子一起形成環。R208~R209係分別獨立地表示氫原子或碳數1~5之烷基。R210為可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基、或可具有取代基之含-SO2-之環式基。L201表示-C(=O)-或-C(=O)-O-。Y201係分別獨立地表示伸芳基、伸烷基或伸烯基。x為1或2。W201表示(x+1)價之連結基]。 [wherein, R 201 to R 207 and R 211 to R 212 each independently represent an aryl group, an alkyl group or an alkenyl group which may have a substituent. R 201 to R 203 , R 206 to R 207 , and R 211 to R 212 may be bonded to each other and form a ring together with a sulfur atom in the formula. R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. R 210 is an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a ring-form group containing -SO 2 - which may have a substituent. L 201 represents -C(=O)- or -C(=O)-O-. Y 201 independently represents an extended aryl group, an alkylene group or an extended alkenyl group. x is 1 or 2. W 201 represents a linkage of (x+1) valence].

作為R201~R207、及R211~R212中之芳基,可列舉碳數6~20之無取代的芳基,較佳為苯基、萘基。 Examples of the aryl group in R 201 to R 207 and R 211 to R 212 include an unsubstituted aryl group having 6 to 20 carbon atoms, and a phenyl group or a naphthyl group is preferred.

作為R201~R207、及R211~R212中之烷基,為鏈狀或環狀之烷基,較佳為碳數1~30者。 The alkyl group in R 201 to R 207 and R 211 to R 212 is a chain or a cyclic alkyl group, preferably a carbon number of 1 to 30.

作為R201~R207、及R211~R212中之烯基,碳數較佳為2~10。 The number of carbon atoms in R 201 to R 207 and R 211 to R 212 is preferably 2 to 10.

作為R201~R207、及R210~R212可具有的取代基,可列舉例如烷基、鹵素原子、鹵化烷基、羰基、氰基、胺基、芳基、下述通式(ca-r-1)~(ca-r-7)分別表示之基。 Examples of the substituent which R 201 to R 207 and R 210 to R 212 may have include an alkyl group, a halogen atom, a halogenated alkyl group, a carbonyl group, a cyano group, an amine group, an aryl group, and the following formula (ca- R-1)~(ca-r-7) respectively represent the basis.

[式中,R’201係分別獨立地為氫原子、可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基]。 [In the formula, R' 201 is each independently a hydrogen atom, a ring group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent.

R’201之可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,可列舉與上述式(b1-a1)中的R101相同者,此外,作為可具有取代基之環式基或可具有取代基之鏈狀之烷基,亦可列舉與上述式(a1-r-2)表示之酸解離性基相同者。 R '201 may be the group having a cyclic substituent, the alkyl group may have a substituent group of the chain, or a chain of the alkenyl substituent group, include R as in the above formula (b1-a1) 101 In addition, as the cyclic alkyl group which may have a substituent or the chain-type alkyl group which may have a substituent, the same is the same as the acid dissociable group represented by the above formula (a1-r-2).

R201~R203、R206~R207、R211~R212互相鍵結並與式中之硫原子一起形成環時,亦可隔著硫原子、氧原子、氮原子等之雜原子;或羰基、-SO-、-SO2-、-SO3-、-COO-、-CONH-或-N(RN)-(該RN為碳數1~5之烷基)等之官能基而鍵結。所形成之環,於其環骨架中包含式中之硫原子的1個環,包含硫原子較佳為3~10員環、特佳為5~7員環。所形成之環之具體例子,可列舉例如噻吩環、噻唑環、苯并噻吩環、噻嗯環、苯并噻吩環、二苯并噻吩環、9H-噻吨環、噻噸酮環、噻嗯環、啡噁噻環、四氫噻 吩鎓環、四氫噻喃鎓(tetrahydrothiopyranium)環等。 When R 201 to R 203 , R 206 to R 207 , and R 211 to R 212 are bonded to each other and form a ring together with a sulfur atom in the formula, a hetero atom such as a sulfur atom, an oxygen atom or a nitrogen atom may be interposed; or a functional group such as a carbonyl group, -SO-, -SO 2 -, -SO 3 -, -COO-, -CONH- or -N(R N )- (the R N is an alkyl group having 1 to 5 carbon atoms) Bonding. The ring formed includes one ring of a sulfur atom in the ring skeleton in the ring skeleton, and the sulfur atom preferably contains a ring of 3 to 10 members, particularly preferably a ring of 5 to 7 members. Specific examples of the ring formed include, for example, a thiophene ring, a thiazole ring, a benzothiophene ring, a thiophene ring, a benzothiophene ring, a dibenzothiophene ring, a 9H-thioxanthene ring, a thioxanthone ring, and a thiophene ring. Ring, morphine ring, tetrahydrothiophene ring, tetrahydrothiopyranium ring, and the like.

R208~R209係分別獨立地表示氫原子或碳數1~5之烷基,較佳為氫原子或碳數1~3之烷基,為烷基時,亦可互相鍵結而形成環。 R 208 to R 209 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. When it is an alkyl group, it may be bonded to each other to form a ring. .

R210為可具有取代基之芳基、可具有取代基之烷基、可具有取代基之烯基、或可具有取代基之含-SO2-之環式基。 R 210 is an aryl group which may have a substituent, an alkyl group which may have a substituent, an alkenyl group which may have a substituent, or a ring-form group containing -SO 2 - which may have a substituent.

作為R210中之芳基,可列舉碳數6~20之無取代的芳基,較佳為苯基、萘基。 The aryl group in R 210 may, for example, be an unsubstituted aryl group having 6 to 20 carbon atoms, preferably a phenyl group or a naphthyl group.

作為R210中之烷基,為鏈狀或環狀之烷基,較佳為碳數1~30者。 The alkyl group in R 210 is a chain or cyclic alkyl group, preferably a carbon number of 1 to 30.

作為R210中之烯基,碳數較佳為2~10。 As the alkenyl group in R 210 , the carbon number is preferably from 2 to 10.

作為R210中之可具有取代基之含-SO2-之環式基,較佳為「含-SO2-之多環式基」、更佳為上述通式(a5-r-1)表示之基。 The -SO 2 -containing cyclic group which may have a substituent in R 210 is preferably a "polycyclic group containing -SO 2 -", more preferably represented by the above formula (a5-r-1) The basis.

Y201係分別獨立地表示伸芳基、伸烷基或伸烯基。 Y 201 independently represents an extended aryl group, an alkylene group or an extended alkenyl group.

Y201中之伸芳基,可列舉自作為上述式(b1-a1)中的R101中之芳香族烴基所例示之芳基中去除1個氫原子而得之基。 The aryl group in Y 201 may be a group obtained by removing one hydrogen atom from the aryl group exemplified as the aromatic hydrocarbon group in R 101 in the above formula (b1-a1).

Y201中之伸烷基、伸烯基,可列舉自作為上述式(b1-a1)中的R101中之鏈狀之烷基、鏈狀之烯基所例示之基中去除1個氫原子而得之基。 The alkylene group and the alkenyl group in Y 201 may be exemplified by the removal of one hydrogen atom from the group exemplified as the chain-like alkyl group or the chain-like alkenyl group in R 101 in the above formula (b1-a1). And the basis.

前述式(ca-4)中,x為1或2。 In the above formula (ca-4), x is 1 or 2.

W201為(x+1)價,亦即2價或3價之連結基。 W 201 is a (x+1) valence, that is, a divalent or trivalent linkage.

作為W201中之2價連結基,較佳為可具有取代基之2價烴基,可例示與上述通式(a2-1)中之Ya21相同的可具有取代基之2價烴基。W201中之2價連結基,可為直鏈狀、分支鏈狀、環狀之任意者,較佳為環狀。其中尤以於伸芳基之兩端組合2個羰基之基為佳。作為伸芳基,可列舉伸苯基、伸萘基等,特佳為伸苯基。 The divalent linking group in W 201 is preferably a divalent hydrocarbon group which may have a substituent, and a divalent hydrocarbon group which may have a substituent similar to Ya 21 in the above formula (a2-1). The divalent linking group in W 201 may be any of a linear chain, a branched chain, and a ring, and is preferably a ring. In particular, it is preferred to combine two carbonyl groups at both ends of the aryl group. Examples of the aryl group include a phenyl group and a naphthyl group, and particularly preferably a phenyl group.

作為W201中之3價連結基,可列舉自前述W201中之2價連結基去除1個氫原子而得之基、於前述2價連結基上進一步鍵結有前述2價連結基之基等。作為W201中之3價連結基,較佳為於伸芳基上鍵結有2個羰基之基。 3 as W 201 of the divalent linking group include the self-W 201 in the divalent linking group obtained by removing one hydrogen atom of the group, the divalent linking group to the further group is bonded, the divalent linking group of Wait. As the trivalent linking group in W 201 , a group having two carbonyl groups bonded to an extended aryl group is preferred.

作為前述式(ca-1)表示之適宜的陽離子,具體而言,可列舉下述式(ca-1-1)~(ca-1-71)分別表示之陽離子。 Specific examples of the cation represented by the above formula (ca-1) include cations represented by the following formulas (ca-1-1) to (ca-1-71).

[式中,g1、g2、g3表示重複數,g1為1~5之整數,g2為0~20之整數,g3為0~20之整數]。 [wherein, g1, g2, and g3 represent the number of repetitions, g1 is an integer of 1 to 5, g2 is an integer of 0 to 20, and g3 is an integer of 0 to 20].

[式中,R”201為氫原子或取代基,作為該取代基,係與作為前述R201~R207、及R210~R212可具有的取代基所列舉者相同]。 [In the formula, R" 201 is a hydrogen atom or a substituent, and the substituent is the same as those exemplified as the substituents which R 201 to R 207 and R 210 to R 212 may have.

作為前述式(ca-2)表示之適宜的陽離子,具體而言,可列舉二苯基錪陽離子、雙(4-tert-丁基苯基)錪陽離子等。 Specific examples of the cation represented by the above formula (ca-2) include a diphenylphosphonium cation and a bis(4-tert-butylphenyl)phosphonium cation.

作為前述式(ca-3)表示之適宜的陽離子,具體而言,可列舉下述式(ca-3-1)~(ca-3-6)分別表示之陽離子。 Specific examples of the cation represented by the above formula (ca-3) include cations represented by the following formulae (ca-3-1) to (ca-3-6).

作為前述式(ca-4)表示之適宜的陽離子,具體而言,可列舉下述式(ca-4-1)~(ca-4-2)分別表示之陽離 子。 Specific examples of the cation represented by the above formula (ca-4) include cations represented by the following formulas (ca-4-1) to (ca-4-2). child.

上述之中,陽離子部((M’m+)1/m),尤以通式(ca-1)表示之陽離子為佳,更佳為式(ca-1-1)~(ca-1-71)分別表示之陽離子。 Among the above, the cation moiety ((M' m+ ) 1/m ) is preferably a cation represented by the formula (ca-1), more preferably a formula (ca-1-1) to (ca-1-71). ) cations are indicated separately.

本實施形態之阻劑組成物中,(B2)成分,可1種單獨使用、亦可合併使用2種以上。 In the resist composition of the present embodiment, the component (B2) may be used alone or in combination of two or more.

阻劑組成物含有(B2)成分時,阻劑組成物中,(B2)成分之含量,相對於(A)成分100質量份而言,較佳為80質量份以下、更佳為1~50質量份、又更佳為1~30質量份。 When the resist composition contains the component (B2), the content of the component (B2) in the resist composition is preferably 80 parts by mass or less, more preferably 1 to 50, per 100 parts by mass of the component (A). The mass fraction is more preferably 1 to 30 parts by mass.

藉由使(B2)成分之含量成為上述範圍,圖型形成係充分地進行。又,將阻劑組成物之各成分溶解於有機溶劑時,容易得到均勻的溶液,作為阻劑組成物之保存安定性良好,故較佳。 By setting the content of the component (B2) to the above range, the pattern formation system proceeds sufficiently. Further, when the respective components of the resist composition are dissolved in an organic solvent, a uniform solution is easily obtained, and the stability of the resist composition is good, which is preferable.

≪(D)成分:酸擴散控制劑成分≫ ≪(D) component: acid diffusion control agent ≫

本實施形態之阻劑組成物,除了(A)成分及(B1)成分以外,亦可進一步含有酸擴散控制劑成分(以下稱為「(D)成分」)。(D)成分為作為將藉由曝光而於阻劑組成物中產生的酸予以捕捉之淬滅劑(酸擴散控制劑)而作用者。 The resist composition of the present embodiment may further contain an acid diffusion controlling agent component (hereinafter referred to as "(D) component") in addition to the component (A) and the component (B1). The component (D) acts as a quencher (acid diffusion controlling agent) which traps an acid generated in the resist composition by exposure.

作為(D)成分,可列舉例如藉由曝光而分解,失去酸擴散控制性之光崩解性鹼(D1)(以下稱為「(D1)成分」)、不相當於該(D1)成分的含氮有機化合物(D2)(以下稱為「(D2)成分」)等。 The component (D) is, for example, a photodisintegrable base (D1) (hereinafter referred to as "(D1) component)) which is decomposed by exposure, loses acid diffusion controllability, and does not correspond to the component (D1). The nitrogen-containing organic compound (D2) (hereinafter referred to as "(D2) component") or the like.

.關於(D1)成分 . About (D1) ingredients

藉由成為含有(D1)成分之阻劑組成物,於形成阻劑圖型時,可更加提高阻劑膜之曝光部與未曝光部之對比。 By forming a resist composition containing the component (D1), when the resist pattern is formed, the contrast between the exposed portion and the unexposed portion of the resist film can be further improved.

作為(D1)成分,只要係藉由曝光而分解,失去酸擴散控制性者,則無特殊限定,較佳為選自由下述通式(d1-1)表示之化合物(以下稱為「(d1-1)成分」)、下述通式(d1-2)表示之化合物(以下稱為「(d1-2)成分」)及下述通式(d1-3)表示之化合物(以下稱為「(d1-3)成分」)所成之群的1種以上之化合物。 The component (D1) is not particularly limited as long as it is decomposed by exposure and loses acid diffusion controllability, and is preferably selected from compounds represented by the following formula (d1-1) (hereinafter referred to as "(d1) -1) Component"), a compound represented by the following formula (d1-2) (hereinafter referred to as "(d1-2) component") and a compound represented by the following formula (d1-3) (hereinafter referred to as " (d1-3) Component ") One or more compounds of the group formed.

(d1-1)~(d1-3)成分,於阻劑膜之曝光部,會分解而失去酸擴散控制性(鹼性),因此不作為淬滅劑而作用,於阻劑膜之未曝光部係作為淬滅劑而作用。 (d1-1)~(d1-3) component decomposes in the exposed portion of the resist film and loses acid diffusion controllability (alkaline), so it does not act as a quencher, and is not exposed to the resist film. It acts as a quencher.

[式中,Rd1~Rd4為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基。惟,式 (d1-2)中的Rd2中之鄰接於S原子的碳原子上,未鍵結有氟原子。Yd1為單鍵或2價連結基。m為1以上之整數,Mm+係分別獨立地為m價之有機陽離子]。 [wherein, Rd 1 to Rd 4 are a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent. However, a fluorine atom is not bonded to a carbon atom adjacent to the S atom in Rd 2 in the formula (d1-2). Yd 1 is a single bond or a divalent linking group. m is an integer of 1 or more, and M m+ is each independently an m-valent organic cation].

{(d1-1)成分} {(d1-1) component} ..陰離子部 . . Anion

式(d1-1)中,Rd1為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,分別可列舉與前述式(b1-a1)中之R101相同者。 Formula (D1-1) in, Rd 1 is a cyclic group may have a substituent group, the alkyl group may have a substituent group of the chain, or a chain of the alkenyl substituent group, include those of the formula ( R 101 in b1-a1) is the same.

此等之中,作為Rd1,尤以可具有取代基之芳香族烴基、可具有取代基之脂肪族環式基、或可具有取代基之鏈狀之烷基為佳。此等之基可具有的取代基,可列舉羥基、側氧基、烷基、芳基、氟原子、氟化烷基、上述通式(a2-r-1)~(a2-r-7)分別表示之含內酯之環式基、醚鍵、酯鍵、或此等之組合。含有醚鍵或酯鍵作為取代基時,亦可隔著伸烷基,此時之取代基,較佳為上述式(y-al-1)~(y-al-5)分別表示之連結基。 Among these, as the Rd 1 , an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a chain-like alkyl group which may have a substituent is preferable. Examples of the substituent which these groups may have include a hydroxyl group, a pendant oxy group, an alkyl group, an aryl group, a fluorine atom, a fluorinated alkyl group, and the above formula (a2-r-1) to (a2-r-7). Represented by a lactone-containing ring group, an ether bond, an ester bond, or a combination thereof. When an ether bond or an ester bond is contained as a substituent, an alkyl group may be interposed, and the substituent at this time is preferably a linking group represented by the above formula (y-al-1) to (y-al-5). .

作為前述芳香族烴基,更佳為苯基或萘基。 The aromatic hydrocarbon group is more preferably a phenyl group or a naphthyl group.

作為前述脂肪族環式基,更佳為自金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之多環烷中去除1個以上的氫原子而得之基。 More preferably, the aliphatic cyclic group is one obtained by removing one or more hydrogen atoms from a polycycloalkane such as adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane. .

作為前述鏈狀之烷基,碳數較佳為1~10,具體而言,可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基等之直鏈狀之烷基;1-甲基乙基、 1-甲基丙基、2-甲基丙基、1-甲基丁基、2-甲基丁基、3-甲基丁基、1-乙基丁基、2-乙基丁基、1-甲基戊基、2-甲基戊基、3-甲基戊基、4-甲基戊基等之分支鏈狀之烷基。 The chain-like alkyl group preferably has 1 to 10 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, and an anthracene group. a linear alkyl group such as a radical; 1-methylethyl, 1-methylpropyl, 2-methylpropyl, 1-methylbutyl, 2-methylbutyl, 3-methylbutyl, 1-ethylbutyl, 2-ethylbutyl, 1 a branched alkyl group such as methylpentyl, 2-methylpentyl, 3-methylpentyl or 4-methylpentyl.

前述鏈狀之烷基為具有氟原子或氟化烷基作為取代基之氟化烷基時,氟化烷基之碳數,較佳為1~11、更佳為1~8、又更佳為1~4。該氟化烷基,亦可含有氟原子以外之原子。作為氟原子以外之原子,可列舉例如氧原子、硫原子、氮原子等。 When the chain-like alkyl group is a fluorinated alkyl group having a fluorine atom or a fluorinated alkyl group as a substituent, the carbon number of the fluorinated alkyl group is preferably from 1 to 11, more preferably from 1 to 8, more preferably It is 1~4. The fluorinated alkyl group may also contain atoms other than a fluorine atom. Examples of the atom other than the fluorine atom include an oxygen atom, a sulfur atom, and a nitrogen atom.

作為Rd1,較佳為構成直鏈狀之烷基的一部分或全部之氫原子經氟原子取代之氟化烷基、特佳為構成直鏈狀之烷基的全部氫原子被氟原子取代之氟化烷基(直鏈狀之全氟烷基)。 As all of the hydrogen atoms Rd 1, it is preferably a part or all of the hydrogen atoms constituting the linear alkyl group substituted by a fluorine atom of the fluorinated alkyl group, particularly preferably a linear alkyl group composed of a fluorine atom is substituted by the A fluorinated alkyl group (linear perfluoroalkyl group).

以下顯示(d1-1)成分之陰離子部的較佳具體例子。 Preferred specific examples of the anion portion of the component (d1-1) are shown below.

..陽離子部 . . Cationic part

式(d1-1)中,Mm+為m價之有機陽離子。 In the formula (d1-1), M m+ is an m-valent organic cation.

作為Mm+之有機陽離子,可適宜列舉與前述通式(ca-1)~(ca-4)分別表示之陽離子相同者,更佳為前述通式(ca-1)表示之陽離子、又更佳為前述式(ca-1-1)~(ca-1-71)分別表示之陽離子。 The organic cation of M m+ is preferably the same as the cation represented by the above formula (ca-1) to (ca-4), more preferably the cation represented by the above formula (ca-1), and more preferably It is a cation represented by the above formula (ca-1-1) to (ca-1-71), respectively.

(d1-1)成分可1種單獨使用、亦可組合2種以上使 用。 (d1-1) The components may be used alone or in combination of two or more. use.

{(d1-2)成分} {(d1-2) ingredient} ..陰離子部 . . Anion

式(d1-2)中,Rd2為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,可列舉與前述式(b1-a1)中的R101相同者。 In the formula (d1-2), R 2 is a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, and may be exemplified by the above formula (b1) R 101 in -a1) is the same.

惟,Rd2中之鄰接於S原子的碳原子上,未鍵結有氟原子(未經氟取代)。藉此,(d1-2)成分之陰離子成為適度的弱酸陰離子,作為(D)成分之淬滅能力會提高。 However, on the carbon atom adjacent to the S atom in Rd 2 , a fluorine atom (not substituted by fluorine) is not bonded. Thereby, the anion of the component (d1-2) becomes a moderately weak acid anion, and the quenching ability as the component (D) is improved.

作為Rd2,較佳為可具有取代基之鏈狀之烷基、或可具有取代基之脂肪族環式基。作為鏈狀之烷基,較佳為碳數1~10、更佳為3~10。作為脂肪族環式基,更佳為自金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等中去除1個以上的氫原子而得之基(可具有取代基);自樟腦等中去除1個以上的氫原子而得之基。 As Rd 2 , a chain-like alkyl group which may have a substituent or an aliphatic ring group which may have a substituent is preferable. The chain alkyl group preferably has a carbon number of 1 to 10, more preferably 3 to 10. The aliphatic cyclic group is more preferably a group obtained by removing one or more hydrogen atoms from adamantane, norbornane, isodecane, tricyclodecane or tetracyclododecane (may have a substituent) ); a base obtained by removing one or more hydrogen atoms from camphor or the like.

Rd2之烴基亦可具有取代基,作為該取代基,可列舉與前述式(d1-1)之Rd1中之烴基(芳香族烴基、脂肪族環式基、鏈狀之烷基)可具有的取代基相同者。 The hydrocarbon group of Rd 2 may have a substituent, and as the substituent, a hydrocarbon group (aromatic hydrocarbon group, aliphatic cyclic group, chain alkyl group) in the Rd 1 of the above formula (d1-1) may be mentioned. The substituents are the same.

以下顯示(d1-2)成分之陰離子部的較佳具體例子。 Preferred specific examples of the anion portion of the component (d1-2) are shown below.

..陽離子部 . . Cationic part

式(d1-2)中,Mm+為m價之有機陽離子,係與前述式(d1-1)中之Mm+相同。 In the formula (d1-2), M m+ is an m-valent organic cation which is the same as M m+ in the above formula (d1-1).

(d1-2)成分,可1種單獨使用、亦可組合2種以上使用。 The component (d1-2) may be used alone or in combination of two or more.

{(d1-3)成分} {(d1-3) ingredient} ..陰離子部 . . Anion

式(d1-3)中,Rd3為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,可列舉與前述式(b1-a1)中的R101相同者,較佳為包含氟原 子之環式基、鏈狀之烷基、或鏈狀之烯基。其中尤以氟化烷基為佳、更佳為與前述Rd1之氟化烷基相同者。 In the formula (d1-3), R 3 is a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, and is exemplified by the above formula (b1) The same as R 101 in -a1) is preferably a cyclic group containing a fluorine atom, a chain alkyl group, or a chain-like alkenyl group. Among them, a fluorinated alkyl group is preferred, and a fluorinated alkyl group of the above Rd 1 is more preferred.

式(d1-3)中,Rd4為可具有取代基之環式基、可具有取代基之鏈狀之烷基、或可具有取代基之鏈狀之烯基,可列舉與前述式(b1-a1)中的R101相同者。 In the formula (d1-3), R 4 is a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent, and is exemplified by the above formula (b1) R 101 in -a1) is the same.

其中尤以可具有取代基之烷基、烷氧基、烯基、環式基為佳。 Among them, an alkyl group, an alkoxy group, an alkenyl group or a cyclic group which may have a substituent is preferred.

Rd4中之烷基,較佳為碳數1~5之直鏈狀或分支鏈狀之烷基,具體而言,可列舉甲基、乙基、丙基、異丙基、n-丁基、異丁基、tert-丁基、戊基、異戊基、新戊基等。Rd4之烷基的氫原子之一部分亦可被羥基、氰基等取代。 The alkyl group in Rd 4 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a propyl group, an isopropyl group, and an n-butyl group. , isobutyl, tert-butyl, pentyl, isopentyl, neopentyl, and the like. A part of the hydrogen atom of the alkyl group of Rd 4 may be substituted with a hydroxyl group, a cyano group or the like.

Rd4中之烷氧基,較佳為碳數1~5之烷氧基,作為碳數1~5之烷氧基,具體而言,可列舉甲氧基、乙氧基、n-丙氧基、iso-丙氧基、n-丁氧基、tert-丁氧基。其中尤以甲氧基、乙氧基為佳。 The alkoxy group in Rd 4 is preferably an alkoxy group having 1 to 5 carbon atoms, and the alkoxy group having 1 to 5 carbon atoms, and specific examples thereof include a methoxy group, an ethoxy group, and an n-propoxy group. Base, iso-propoxy, n-butoxy, tert-butoxy. Among them, a methoxy group and an ethoxy group are preferred.

Rd4中之烯基,可列舉與上述式(b1-a1)中之R101相同者,較佳為乙烯基、丙烯基(烯丙基)、1-甲基丙烯基、2-甲基丙烯基。此等之基亦可進一步具有碳數1~5之烷基或碳數1~5之鹵化烷基作為取代基。 The alkenyl group in Rd 4 may be the same as R 101 in the above formula (b1-a1), and is preferably a vinyl group, a propenyl group (allyl group), a 1-methylpropenyl group or a 2-methylpropene group. base. These groups may further have a C 1 to 5 alkyl group or a C 1 to 5 halogenated alkyl group as a substituent.

Rd4中之環式基,可列舉與上述式(b1-a1)中之R101相同者,較佳為自環戊烷、環己烷、金剛烷、降莰烷、異莰烷、三環癸烷、四環十二烷等之環烷中去除1個以上的氫原子而得之脂環式基;或苯基、萘基等之芳香族基。Rd4為脂環式基時,藉由使阻劑組成物良好地溶解於 有機溶劑,微影特性成為良好。又,Rd4為芳香族基時,於以EUV等為曝光光源的微影中,該阻劑組成物之光吸收效率優良,感度或微影特性成為良好。 The ring group in Rd 4 may be the same as R 101 in the above formula (b1-a1), preferably from cyclopentane, cyclohexane, adamantane, norbornane, isodecane, tricyclic ring. An alicyclic group obtained by removing one or more hydrogen atoms from a cycloalkane such as decane or tetracyclododecane; or an aromatic group such as a phenyl group or a naphthyl group. When Rd 4 is an alicyclic group, the lithographic properties are excellent by dissolving the resist composition in an organic solvent well. Further, when Rd 4 is an aromatic group, in the lithography using EUV or the like as an exposure light source, the resist composition has excellent light absorption efficiency, and the sensitivity or lithography characteristics are good.

式(d1-3)中,Yd1為單鍵或2價連結基。 In the formula (d1-3), Yd 1 is a single bond or a divalent linking group.

作為Yd1中之2價連結基,並無特殊限定,可列舉可具有取代基之2價烴基(脂肪族烴基、芳香族烴基)、包含雜原子之2價連結基等。此等可分別列舉與於上述式(a2-1)中的Ya21中之2價連結基之說明中所列舉的可具有取代基之2價烴基、包含雜原子之2價連結基為相同者。 The divalent linking group in Yd 1 is not particularly limited, and examples thereof include a divalent hydrocarbon group (aliphatic hydrocarbon group or aromatic hydrocarbon group) which may have a substituent, and a divalent linking group containing a hetero atom. These may be the same as the divalent hydrocarbon group which may have a substituent and the divalent linking group containing a hetero atom which are listed in the description of the divalent linking group in Ya 21 in the above formula (a2-1). .

作為Yd1,較佳為羰基、酯鍵、醯胺鍵、伸烷基或此等之組合。作為伸烷基,更佳為直鏈狀或分支鏈狀之伸烷基、又更佳為亞甲基或伸乙基。 As Yd 1 , a carbonyl group, an ester bond, a guanamine bond, an alkylene group or a combination thereof is preferred. The alkylene group is more preferably a linear or branched alkyl group, more preferably a methylene group or an ethyl group.

以下顯示(d1-3)成分之陰離子部的較佳具體例子。 Preferred specific examples of the anion portion of the component (d1-3) are shown below.

..陽離子部 . . Cationic part

式(d1-3)中,Mm+為m價之有機陽離子,係與前述式(d1-1)中之Mm+相同。 In the formula (d1-3), M m+ is an m-valent organic cation which is the same as M m+ in the above formula (d1-1).

(d1-3)成分,可1種單獨使用、亦可組合2種以上使用。 The component (d1-3) may be used alone or in combination of two or more.

(D1)成分,可僅使用上述(d1-1)~(d1-3)成分之任1種、亦可組合2種以上使用。 The component (D1) may be used alone or in combination of two or more of the above components (d1-1) to (d1-3).

阻劑組成物含有(D1)成分時,阻劑組成物中,(D1)成分之含量,相對於(A)成分100質量份而言,較佳為 0.5~10質量份、更佳為0.5~8質量份、又更佳為1~8質量份。 When the resist composition contains the component (D1), the content of the component (D1) in the resist composition is preferably 100 parts by mass based on the component (A). 0.5 to 10 parts by mass, more preferably 0.5 to 8 parts by mass, still more preferably 1 to 8 parts by mass.

(D1)成分之含量為較佳之下限值以上時,容易得到特別良好的微影特性及阻劑圖型形狀。另一方面,為上限值以下時,可良好地維持感度,通量(throughput)亦優良。 When the content of the component (D1) is preferably at least the lower limit, it is easy to obtain particularly excellent lithographic properties and a resist pattern shape. On the other hand, when it is less than the upper limit, the sensitivity can be favorably maintained, and the throughput is also excellent.

(D1)成分之製造方法: (D1) component manufacturing method:

前述(d1-1)成分、(d1-2)成分之製造方法,並無特殊限定,可藉由公知之方法製造。 The method for producing the component (d1-1) and the component (d1-2) is not particularly limited, and it can be produced by a known method.

又,(d1-3)成分之製造方法,並無特殊限定,例如係與US2012-0149916號公報記載之方法同樣方式地製造。 Further, the method for producing the component (d1-3) is not particularly limited, and is produced, for example, in the same manner as the method described in US2012-0149916.

.關於(D2)成分 . About (D2) ingredients

作為酸擴散控制劑成分,亦可含有不相當於上述(D1)成分的含氮有機化合物成分(以下稱為「(D2)成分」)。 The acid diffusion controlling agent component may contain a nitrogen-containing organic compound component (hereinafter referred to as "(D2) component") which does not correspond to the above (D1) component.

作為(D2)成分,只要係作為酸擴散控制劑而作用者、且不相當於(D1)成分者,則無特殊限定,只要由公知者中任意使用即可。其中尤以脂肪族胺為佳,其中尤特別以2級脂肪族胺或3級脂肪族胺更佳。 The component (D2) is not particularly limited as long as it functions as an acid diffusion controlling agent and does not correspond to the component (D1), and may be used arbitrarily by a person skilled in the art. Among them, an aliphatic amine is preferred, and particularly preferably a grade 2 aliphatic amine or a tertiary aliphatic amine.

脂肪族胺,係指具有1的以上的脂肪族基之胺,該脂肪族基,碳數較佳為1~12。 The aliphatic amine means an amine having 1 or more aliphatic groups, and the aliphatic group preferably has 1 to 12 carbon atoms.

作為脂肪族胺,可列舉將氨NH3的至少1個氫原子,以碳數12以下之烷基或羥基烷基取代而得之胺(烷基胺或烷基醇胺)或環式胺。 The aliphatic amine may, for example, be an amine (alkylamine or alkylolamine) or a cyclic amine obtained by substituting at least one hydrogen atom of ammonia NH 3 with an alkyl group having 12 or less carbon atoms or a hydroxyalkyl group.

作為烷基胺及烷基醇胺之具體例子,可列舉n-己胺、n-庚胺、n-辛胺、n-壬胺、n-癸胺等之單烷基胺;二乙胺、二-n-丙胺、二-n-庚胺、二-n-辛胺、二環己胺等之二烷基胺;三甲胺、三乙胺、三-n-丙胺、三-n-丁胺、三-n-戊胺、三-n-己胺、三-n-庚胺、三-n-辛胺、三-n-壬胺、三-n-癸胺、三-n-十二胺等之三烷基胺;二乙醇胺、三乙醇胺、二異丙醇胺、三異丙醇胺、二-n-辛醇胺、三-n-辛醇胺等之烷基醇胺。此等之中,尤以碳數5~10之三烷基胺更佳、特佳為三-n-戊胺或三-n-辛胺。 Specific examples of the alkylamine and the alkylolamine include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-decylamine, and n-decylamine; diethylamine; a dialkylamine such as di-n-propylamine, di-n-heptylamine, di-n-octylamine or dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine , tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-decylamine, tri-n-decylamine, tri-n-dodecylamine Alkylamines such as trialkylamine; diethanolamine, triethanolamine, diisopropanolamine, triisopropanolamine, di-n-octanolamine, tri-n-octanolamine, and the like. Among these, a trialkylamine having 5 to 10 carbon atoms is more preferable, and particularly preferably tri-n-pentylamine or tri-n-octylamine.

作為環式胺,可列舉例如包含氮原子作為雜原子之雜環化合物。作為該雜環化合物,可為單環式者(脂肪族單環式胺)亦可為多環式者(脂肪族多環式胺)。 The cyclic amine may, for example, be a heterocyclic compound containing a nitrogen atom as a hetero atom. The heterocyclic compound may be a monocyclic one (aliphatic monocyclic amine) or a polycyclic one (aliphatic polycyclic amine).

作為脂肪族單環式胺,具體而言,可列舉哌啶、哌嗪等。 Specific examples of the aliphatic monocyclic amine include piperidine and piperazine.

作為脂肪族多環式胺,較佳為碳數6~10者,具體而言,可列舉1,5-二氮雜雙環[4.3.0]-5-壬烯、1,8-二氮雜雙環[5.4.0]-7-十一烯、六亞甲四胺、1,4-二氮雜雙環[2.2.2]辛烷等。 The aliphatic polycyclic amine is preferably a carbon number of 6 to 10, and specific examples thereof include 1,5-diazabicyclo[4.3.0]-5-nonene and 1,8-diaza Bicyclo [5.4.0]-7-undecene, hexamethylenetetramine, 1,4-diazabicyclo[2.2.2]octane, and the like.

作為其他之脂肪族胺,可列舉參(2-甲氧基甲氧基乙基)胺、參{2-(2-甲氧基乙氧基)乙基}胺、參{2-(2-甲氧基乙氧基甲氧基)乙基}胺、參{2-(1-甲氧基乙氧基)乙基}胺、參{2-(1-乙氧基乙氧基)乙基}胺、參{2-(1-乙氧基丙氧基)乙基}胺、參[2-{2-(2-羥基乙氧基)乙氧基}乙基]胺、三乙醇胺三乙酸酯等,較佳為三乙醇胺三乙酸酯。 As other aliphatic amines, ginseng (2-methoxymethoxyethyl)amine, gin {2-(2-methoxyethoxy)ethyl}amine, and {2-(2- Methoxyethoxymethoxy)ethyl}amine, gin {2-(1-methoxyethoxy)ethyl}amine, gin {2-(1-ethoxyethoxy)ethyl }amine, ginseng {2-(1-ethoxypropoxy)ethyl}amine, ginseng [2-{2-(2-hydroxyethoxy)ethoxy}ethyl]amine, triethanolamine triethyl An acid ester or the like is preferably triethanolamine triacetate.

又,作為(D2)成分,亦可使用芳香族胺。 Further, as the component (D2), an aromatic amine can also be used.

作為芳香族胺,可列舉4-二甲基胺基吡啶、吡咯、吲哚、吡唑、咪唑或此等之衍生物、三苄胺、2,6-二異丙基苯胺、N-tert-丁氧基羰基吡咯啶等。 Examples of the aromatic amine include 4-dimethylaminopyridine, pyrrole, hydrazine, pyrazole, imidazole or derivatives thereof, tribenzylamine, 2,6-diisopropylaniline, and N-tert- Butoxycarbonylpyrrolidine and the like.

(D2)成分,可1種單獨使用、亦可組合2種以上使用。 The component (D2) may be used alone or in combination of two or more.

阻劑組成物含有(D2)成分時,阻劑組成物中,(D2)成分,相對於(A)成分100質量份而言,通常以0.01~5質量份之範圍使用。藉由成為上述範圍,會提高阻劑圖型形狀、曝光後經時安定性等。 When the resist composition contains the component (D2), the component (D2) in the resist composition is usually used in an amount of 0.01 to 5 parts by mass based on 100 parts by mass of the component (A). When it is in the above range, the shape of the resist pattern, the stability over time after exposure, and the like are improved.

≪(E)成分:選自由有機羧酸以及磷的含氧酸及其衍生物所成之群的至少1種化合物≫ ≪ (E) component: at least one compound selected from the group consisting of organic carboxylic acids and phosphorus oxyacids and derivatives thereof

以防止感度劣化、或提高阻劑圖型形狀、曝光後經時安定性等為目的,於本實施形態之阻劑組成物中,可含有選自由有機羧酸以及磷的含氧酸及其衍生物所成之群的至少1種化合物(E)(以下稱為「(E)成分」),作為任意成分。 The resist composition of the present embodiment may contain an oxyacid selected from an organic carboxylic acid and phosphorus and its derivative for the purpose of preventing deterioration of sensitivity, or improving shape of a resist pattern, stability over time after exposure, and the like. At least one compound (E) (hereinafter referred to as "(E) component") of the group formed by the substance is an optional component.

作為有機羧酸,例如以乙酸、丙二酸、檸檬酸、蘋果酸、琥珀酸、安息香酸、水楊酸等為適宜。 As the organic carboxylic acid, for example, acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid or the like is suitable.

作為磷的含氧酸,可列舉磷酸、膦酸、次磷酸等,此等之中尤特以膦酸為佳。 Examples of the oxo acid of phosphorus include phosphoric acid, phosphonic acid, and hypophosphorous acid. Among them, phosphite is preferred.

作為磷的含氧酸之衍生物,可列舉例如上述含氧酸之氫原子被烴基取代而得之酯等,作為前述烴基,可列舉碳 數1~5之烷基、碳數6~15之芳基等。 Examples of the oxo acid-containing derivative of phosphorus include an ester obtained by substituting a hydrogen atom of the above-mentioned oxo acid with a hydrocarbon group, and examples of the hydrocarbon group include carbon. An alkyl group having 1 to 5 carbon atoms and an aryl group having 6 to 15 carbon atoms.

作為磷酸之衍生物,可列舉磷酸二-n-丁酯、磷酸二苯酯等之磷酸酯等。 Examples of the derivative of phosphoric acid include phosphates such as di-n-butyl phosphate and diphenyl phosphate.

作為膦酸之衍生物,可列舉膦酸二甲酯、膦酸-二-n-丁酯、膦酸苯酯、膦酸二苯酯、膦酸二苄酯等之膦酸酯等。 Examples of the derivative of the phosphonic acid include phosphonates such as dimethyl phosphonate, di-n-butyl phosphonate, phenyl phosphonate, diphenyl phosphonate, and dibenzyl phosphonate.

作為次磷酸之衍生物,可列舉次磷酸酯或次磷酸苯酯等。 Examples of the derivative of hypophosphorous acid include a hypophosphite or phenyl hypophosphite.

本實施形態之阻劑組成物中,(E)成分可1種單獨使用、亦可合併使用2種以上。 In the resist composition of the present embodiment, the component (E) may be used alone or in combination of two or more.

阻劑組成物含有(E)成分時,(E)成分之含量,相對於(A)成分100質量份而言,通常係以0.01~5質量份之範圍使用。 When the resist composition contains the component (E), the content of the component (E) is usually 0.01 to 5 parts by mass based on 100 parts by mass of the component (A).

≪(F)成分:氟添加劑成分≫ ≪(F) component: fluorine additive component ≫

本實施形態之阻劑組成物,為了對阻劑膜賦予撥水性,亦可含有氟添加劑成分(以下稱為「(F)成分」)。 The resist composition of the present embodiment may contain a fluorine additive component (hereinafter referred to as "(F) component") in order to impart water repellency to the resist film.

作為(F)成分,例如可使用日本特開2010-002870號公報、日本特開2010-032994號公報、日本特開2010-277043號公報、日本特開2011-13569號公報、日本特開2011-128226號公報所記載的含氟高分子化合物。 For the component (F), for example, JP-A-2010-002870, JP-A-2010-032994, JP-A-2010-277043, JP-A-2011-13569, and JP-A-2011- The fluorine-containing polymer compound described in Japanese Patent Publication No. 128226.

作為(F)成分,更具體而言,可列舉具有下述式(f1-1)表示之構成單位(f1)的聚合物。作為前述聚合物,較佳為僅由下述式(f1-1)表示之構成單位(f1)所構成之聚合物(均 聚物);該構成單位(f1)與前述構成單位(a1)之共聚物;該構成單位(f1)、由丙烯酸或甲基丙烯酸所衍生之構成單位與前述構成單位(a1)之共聚物。此處,作為與該構成單位(f1)共聚合的前述構成單位(a1),較佳為由(甲基)丙烯酸1-乙基-1-環辛酯所衍生之構成單位、由(甲基)丙烯酸1-甲基-1-金剛烷酯所衍生之構成單位。 More specifically, the component (F) is a polymer having a constituent unit (f1) represented by the following formula (f1-1). The polymer is preferably a polymer composed of a constituent unit (f1) represented by the following formula (f1-1). a copolymer of the constituent unit (f1) and the constituent unit (a1); a copolymer of the constituent unit derived from acrylic acid or methacrylic acid and the constituent unit (a1). Here, the constituent unit (a1) which is copolymerized with the constituent unit (f1) is preferably a constituent unit derived from 1-ethyl-1-cyclooctyl (meth)acrylate, and is (methyl). a constituent unit derived from 1-methyl-1-adamantyl acrylate.

[式中,R係與前述相同,Rf102及Rf103係分別獨立地表示氫原子、鹵素原子、碳數1~5之烷基或碳數1~5之鹵化烷基,Rf102及Rf103可為相同亦可相異。nf1為1~5之整數,Rf101為包含氟原子之有機基]。 [In the formula, R is the same as defined above, and Rf 102 and Rf 103 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, and Rf 102 and Rf 103 Can be the same or different. Nf 1 is an integer of 1 to 5, and Rf 101 is an organic group containing a fluorine atom].

式(f1-1)中,鍵結於α位之碳原子的R,係與前述相同。作為R,較佳為氫原子或甲基。 In the formula (f1-1), R which is bonded to the carbon atom of the α -position is the same as described above. R is preferably a hydrogen atom or a methyl group.

式(f1-1)中,作為Rf102及Rf103之鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,特佳為氟原子。作為Rf102及Rf103之碳數1~5之烷基,可列舉與上述R之碳數1~5之烷基相同者,較佳為甲基或乙基。作為Rf102及 Rf103之碳數1~5之鹵化烷基,具體而言,可列舉碳數1~5之烷基的氫原子之一部分或全部被鹵素原子取代之基。作為該鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,特佳為氟原子。其中,作為Rf102及Rf103,尤以氫原子、氟原子、或碳數1~5之烷基為佳;更佳為氫原子、氟原子、甲基、或乙基。 In the formula (f1-1), examples of the halogen atom of Rf 102 and Rf 103 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and particularly preferably a fluorine atom. Examples of the alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include the same as the alkyl group having 1 to 5 carbon atoms of R, and a methyl group or an ethyl group is preferred. Specific examples of the halogenated alkyl group having 1 to 5 carbon atoms of Rf 102 and Rf 103 include a group in which one or all of hydrogen atoms of an alkyl group having 1 to 5 carbon atoms are substituted with a halogen atom. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and particularly preferably a fluorine atom. Among them, Rf 102 and Rf 103 are preferably a hydrogen atom, a fluorine atom or an alkyl group having 1 to 5 carbon atoms; more preferably a hydrogen atom, a fluorine atom, a methyl group or an ethyl group.

式(f1-1)中,nf1為1~5之整數,較佳為1~3之整數、更佳為1或2。 In the formula (f1-1), nf 1 is an integer of 1 to 5, preferably an integer of 1 to 3, more preferably 1 or 2.

式(f1-1)中,Rf101為包含氟原子之有機基、較佳為包含氟原子之烴基。 In the formula (f1-1), Rf 101 is an organic group containing a fluorine atom, preferably a hydrocarbon group containing a fluorine atom.

包含氟原子之烴基,可為直鏈狀、分支鏈狀或環狀之任意者,碳數較佳為1~20、更佳為碳數1~15、特佳為碳數1~10。 The hydrocarbon group containing a fluorine atom may be any of a linear chain, a branched chain or a ring, and the carbon number is preferably from 1 to 20, more preferably from 1 to 15, and particularly preferably from 1 to 10.

又,包含氟原子之烴基,較佳為該烴基中之氫原子的25%以上被氟化、更佳為50%以上被氟化,就提高浸漬曝光時之阻劑膜的疏水性而言,特佳為60%以上被氟化。 Further, in the hydrocarbon group containing a fluorine atom, it is preferred that 25% or more of the hydrogen atoms in the hydrocarbon group are fluorinated, more preferably 50% or more, to improve the hydrophobicity of the resist film during immersion exposure. Particularly preferred is more than 60% fluorinated.

其中,作為Rf101,尤以碳數1~5之氟化烴基更佳;特佳為三氟甲基、-CH2-CF3、-CH2-CF2-CF3、-CH(CF3)2、-CH2-CH2-CF3、-CH2-CH2-CF2-CF2-CF2-CF3Wherein, as Rf 101 , a fluorinated hydrocarbon group having a carbon number of 1 to 5 is particularly preferable; particularly preferably a trifluoromethyl group, -CH 2 -CF 3 , -CH 2 -CF 2 -CF 3 , -CH (CF 3 ) 2 , -CH 2 -CH 2 -CF 3 , -CH 2 -CH 2 -CF 2 -CF 2 -CF 2 -CF 3 .

(F)成分之質量平均分子量(Mw)(以凝膠滲透層析之聚苯乙烯換算基準),較佳為1000~50000、更佳為5000~40000、最佳為10000~30000。若為該範圍之上限值以下時,係有作為阻劑使用之對阻劑用溶劑的充分之溶解性,若為該範圍之下限值以上時,則耐乾蝕刻性或阻劑圖 型截面形狀良好。 The mass average molecular weight (Mw) of the component (F) (based on polystyrene conversion by gel permeation chromatography) is preferably from 1,000 to 50,000, more preferably from 5,000 to 40,000, most preferably from 10,000 to 30,000. When it is less than or equal to the upper limit of the range, it is sufficient solubility of the solvent for the resist used as a resist, and when it is at least the lower limit of the range, dry etching resistance or resist diagram The shape of the cross section is good.

(F)成分之分散度(Mw/Mn),較佳為1.0~5.0、更佳為1.0~3.0、最佳為1.2~2.5。 The degree of dispersion (Mw/Mn) of the component (F) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, most preferably 1.2 to 2.5.

本實施形態之阻劑組成物中,(F)成分可1種單獨使用、亦可合併使用2種以上。 In the resist composition of the present embodiment, the component (F) may be used alone or in combination of two or more.

阻劑組成物含有(F)成分時,(F)成分之含量,相對於(A)成分100質量份而言,通常以0.5~10質量份之比例使用。 When the resist composition contains the component (F), the content of the component (F) is usually from 0.5 to 10 parts by mass based on 100 parts by mass of the component (A).

≪(S)成分:有機溶劑成分≫ ≪(S) component: organic solvent component ≫

本實施形態之阻劑組成物,可將阻劑材料溶解於有機溶劑成分(以下稱為「(S)成分」)而製造。 The resist composition of the present embodiment can be produced by dissolving a resist material in an organic solvent component (hereinafter referred to as "(S) component").

作為(S)成分,只要係可將所使用之各成分溶解,成為均勻溶液者即可,可由以往作為化學增幅型阻劑組成物之溶劑所公知者當中適當選擇任意者來使用。 As the component (S), any component to be used may be dissolved to obtain a homogeneous solution, and any one of those conventionally known as a solvent for a chemically amplified resist composition may be appropriately selected and used.

作為(S)成分,可列舉例如γ-丁內酯等之內酯類;丙酮、甲基乙基酮、環己酮、甲基-n-戊基酮、甲基異戊基酮、2-庚酮等之酮類;乙二醇、二乙二醇、丙二醇、二丙二醇等之多元醇類;乙二醇單乙酸酯、二乙二醇單乙酸酯、丙二醇單乙酸酯、或二丙二醇單乙酸酯等之具有酯鍵的化合物;前述多元醇類或前述具有酯鍵的化合物之單甲基醚、單乙基醚、單丙基醚、單丁基醚等之單烷基醚或單苯基醚等之具有醚鍵的化合物等之多元醇類的衍生物[此等之中,較佳為丙二醇單甲基醚乙酸酯(PGMEA)、丙二醇 單甲基醚(PGME)];如二噁烷般之環式醚類;或乳酸甲酯、乳酸乙酯(EL)、乙酸甲酯、乙酸乙酯、乙酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲氧基丙酸甲酯、乙氧基丙酸乙酯等之酯類;苯甲醚、乙基苄基醚、甲苯酚基甲基醚、二苯基醚、二苄基醚、苯乙醚、丁基苯基醚、乙基苯、二乙基苯、戊基苯、異丙基苯、甲苯、二甲苯、異丙基甲苯、均三甲苯等之芳香族系有機溶劑;二甲基亞碸(DMSO)等。 Examples of the (S) component include lactones such as γ-butyrolactone; acetone, methyl ethyl ketone, cyclohexanone, methyl-n-amyl ketone, methyl isoamyl ketone, and 2- a ketone such as heptanone; a polyhydric alcohol such as ethylene glycol, diethylene glycol, propylene glycol or dipropylene glycol; ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, or a compound having an ester bond such as dipropylene glycol monoacetate; a monoalkyl group such as a monomethyl ether, a monoethyl ether, a monopropyl ether or a monobutyl ether of the above polyol or a compound having an ester bond; a derivative of a polyhydric alcohol such as an ether bond-containing compound such as an ether or a monophenyl ether; among these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol are preferred. Monomethyl ether (PGME)]; a cyclic ether such as dioxane; or methyl lactate, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, acetone An ester of ethyl acetate, methyl methoxypropionate or ethyl ethoxypropionate; anisole, ethylbenzyl ether, cresyl methyl ether, diphenyl ether, dibenzyl ether An aromatic organic solvent such as phenethyl ether, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, cumene, toluene, xylene, isopropyl toluene or mesitylene; Methyl sulfoxide (DMSO) and the like.

本實施形態之阻劑組成物中,(S)成分可1種單獨使用、亦可作為2種以上之混合溶劑使用。 In the resist composition of the present embodiment, the (S) component may be used singly or as a mixed solvent of two or more kinds.

其中尤以PGMEA、PGME、γ-丁內酯、EL、環己酮為佳。 Among them, PGMEA, PGME, γ-butyrolactone, EL, and cyclohexanone are preferred.

又,亦佳為混合有PGMEA與極性溶劑之混合溶劑。其摻合比(質量比),只要考慮PGMEA與極性溶劑之相溶性等來適當決定即可,但較佳為1:9~9:1、更佳為2:8~8:2之範圍內為佳。 Further, it is also preferred to mix a mixed solvent of PGMEA and a polar solvent. The blending ratio (mass ratio) may be appropriately determined in consideration of compatibility between PGMEA and a polar solvent, etc., but is preferably in the range of 1:9 to 9:1, more preferably 2:8 to 8:2. It is better.

更具體而言,摻合EL或環己酮作為極性溶劑時,PGMEA:EL或環己酮之質量比,較佳為1:9~9:1、更佳為2:8~8:2。又,摻合PGME作為極性溶劑時,PGMEA:PGME之質量比,較佳為1:9~9:1、更佳為2:8~8:2、又更佳為3:7~7:3。進一步地,亦佳為PGMEA、PGME與環己酮之混合溶劑。 More specifically, when blending EL or cyclohexanone as a polar solvent, the mass ratio of PGMEA:EL or cyclohexanone is preferably 1:9 to 9:1, more preferably 2:8 to 8:2. Further, when PGME is blended as a polar solvent, the mass ratio of PGMEA:PGME is preferably 1:9 to 9:1, more preferably 2:8 to 8:2, still more preferably 3:7 to 7:3. . Further, a mixed solvent of PGMEA, PGME and cyclohexanone is also preferred.

又,作為(S)成分而言,其他亦佳為由PGMEA及EL之中選出之至少1種與γ-丁內酯的混合溶劑。此時,就混 合比例而言,前者與後者之質量比較佳為70:30~95:5。 Further, as the component (S), a mixed solvent of at least one selected from PGMEA and EL and γ-butyrolactone is also preferable. At this point, just mix In proportion, the quality of the former and the latter is preferably 70:30~95:5.

(S)成分之使用量並無特殊限定,係以可塗佈於基板等的濃度,依塗佈膜厚適當設定。一般而言係以阻劑組成物之固體成分濃度成為1~20質量%、較佳成為2~15質量%之範圍內的方式使用(S)成分。 The amount of the component (S) to be used is not particularly limited, and is appropriately set depending on the coating film thickness at a concentration that can be applied to a substrate or the like. In general, the (S) component is used in such a manner that the solid content concentration of the resist composition is in the range of 1 to 20% by mass, preferably 2 to 15% by mass.

本實施形態之阻劑組成物中,可進一步依期望適當添加而含有具混合性之添加劑,例如用以改良阻劑膜性能之加成性樹脂、溶解抑制劑、可塑劑、安定劑、著色劑、防暈光劑、染料等。 The resist composition of the present embodiment may further contain a filler additive as appropriate, such as an additive resin, a dissolution inhibitor, a plasticizer, a stabilizer, or a colorant for improving the properties of the resist film. , anti-fog, dyes, etc.

(阻劑圖型形成方法) (Resist pattern formation method)

本發明之第2態樣之阻劑圖型形成方法,具有於支持體上使用上述第1態樣之阻劑組成物形成阻劑膜之步驟、使前述阻劑膜曝光之步驟、及將前述曝光後之阻劑膜顯影而形成阻劑圖型之步驟。 A method for forming a resist pattern according to a second aspect of the present invention, comprising the steps of forming a resist film on the support using the resist composition of the first aspect, exposing the resist film, and The step of developing the resist film after exposure to form a resist pattern.

作為該阻劑圖型形成方法之一實施形態,例如可列舉如以下般進行的阻劑圖型形成方法。 As an embodiment of the resist pattern forming method, for example, a resist pattern forming method as described below can be cited.

首先,於支持體上以旋轉器等塗佈上述實施形態之阻劑組成物,例如以80~150℃之溫度條件,實施烘烤(塗佈後烘烤(PAB))處理40~120秒、較佳為60~90秒,以形成阻劑膜。 First, the resist composition of the above embodiment is applied to a support by a spinner or the like, and baked (applicable after baking (PAB)) for 40 to 120 seconds, for example, at a temperature of 80 to 150 ° C. It is preferably 60 to 90 seconds to form a resist film.

接著,對該阻劑膜,使用例如ArF曝光裝置、電子束描繪裝置、EUV曝光裝置等之曝光裝置,進行透過形成有 特定圖型之遮罩(遮罩圖型)的曝光或不透過遮罩圖型之電子束的直接照射而描繪等的選擇性曝光後,例如以80~150℃之溫度條件實施烘烤(曝光後烘烤(PEB))處理40~120秒、較佳為60~90秒。 Next, the resist film is formed by using an exposure apparatus such as an ArF exposure apparatus, an electron beam drawing apparatus, or an EUV exposure apparatus. After selective exposure such as exposure of a mask of a specific pattern (mask pattern) or direct illumination of an electron beam that does not pass through a mask pattern, for example, baking is performed at a temperature of 80 to 150 ° C (exposure) Post-baking (PEB) treatment is 40 to 120 seconds, preferably 60 to 90 seconds.

接著,將前述阻劑膜顯影處理。鹼顯影製程的情況時,顯影處理係使用鹼顯影液進行;溶劑顯影製程的情況時,顯影處理係使用含有有機溶劑之顯影液(有機系顯影液)進行。 Next, the aforementioned resist film is developed. In the case of the alkali development process, the development process is performed using an alkali developer; in the case of a solvent development process, the development process is performed using a developer (organic developer) containing an organic solvent.

顯影處理後,較佳為進行潤洗處理。鹼顯影製程的情況時,潤洗處理較佳為使用純水的水潤洗;溶劑顯影製程的情況時,潤洗處理較佳為使用含有有機溶劑之潤洗液。 After the development treatment, it is preferred to carry out a rinsing treatment. In the case of the alkali developing process, the rinsing treatment is preferably a water rinsing using pure water; in the case of a solvent developing process, the rinsing treatment is preferably a rinsing liquid containing an organic solvent.

溶劑顯影製程的情況時,於前述顯影處理或潤洗處理之後,亦可進行將附著於圖型上的顯影液或潤洗液以超臨界流體去除之處理。 In the case of the solvent developing process, the developing solution or the rinsing liquid adhering to the pattern may be removed by supercritical fluid after the development processing or the rinsing treatment.

顯影處理後或潤洗處理後,係進行乾燥。又,亦可依情況於上述顯影處理後進行烘烤處理(後烘烤)。 After the development treatment or after the rinsing treatment, it is dried. Further, the baking treatment (post-baking) may be performed after the development processing as described above.

如此地,可形成阻劑圖型。 In this way, a resist pattern can be formed.

作為支持體,並無特殊限定,可使用以往公知者,可列舉例如電子零件用之基板、或於其上形成有特定之配線圖型者等。更具體而言,可列舉矽晶圓、銅、鉻、鐵、鋁等之金屬製之基板、或玻璃基板等。作為配線圖型之材料,例如可使用銅、鋁、鎳、金等。 The support is not particularly limited, and a conventionally known one may be used, and examples thereof include a substrate for an electronic component or a specific wiring pattern formed thereon. More specifically, a substrate made of a metal such as a germanium wafer, copper, chromium, iron, or aluminum, or a glass substrate or the like can be given. As a material of the wiring pattern, for example, copper, aluminum, nickel, gold, or the like can be used.

又,作為支持體,亦可為如上述之基板上設置有無機系及/或有機系之膜者。無機系之膜可列舉無機抗反射膜 (無機BARC)。有機系之膜可列舉有機抗反射膜(有機BARC)、或多層阻劑法中之下層有機膜等之有機膜。 Further, as the support, an inorganic or/or organic film may be provided on the substrate as described above. Inorganic antireflection film (Inorganic BARC). The organic film may be an organic film such as an organic antireflection film (organic BARC) or a lower organic film in a multilayer resist method.

此處,多層阻劑法,係指於基板上設置至少一層之有機膜(下層有機膜)、與至少一層之阻劑膜(上層阻劑膜),以形成於上層阻劑膜之阻劑圖型為遮罩,來進行下層有機膜之圖型化的方法,被認為可形成高縱橫比之圖型。亦即,依照多層阻劑法,可藉由下層有機膜確保所要的厚度,因此可使阻劑膜薄膜化,可形成高縱橫比之微細圖型。 Here, the multilayer resist method refers to a resistant pattern in which at least one organic film (lower organic film) and at least one resist film (upper resist film) are formed on a substrate to form an upper resist film. The type of mask is used to pattern the underlying organic film, and it is considered that a high aspect ratio pattern can be formed. That is, according to the multilayer resist method, the desired thickness can be ensured by the underlying organic film, so that the resist film can be thinned and a fine pattern of high aspect ratio can be formed.

多層阻劑法中,基本上分為成為上層阻劑膜與下層有機膜的二層構造之方法(2層阻劑法)、與成為於上層阻劑膜與下層有機膜之間設有一層以上之中間層(金屬薄膜等)的三層以上之多層構造的方法(3層阻劑法)。 In the multilayer resist method, it is basically divided into a method of forming a two-layer structure of an upper resist film and a lower organic film (two-layer resist method), and one or more layers between the upper resist film and the lower organic film. A method of three-layer or more multilayer structure of an intermediate layer (metal thin film or the like) (three-layer resist method).

曝光所用之波長並無特殊限定,可使用ArF準分子雷射、KrF準分子雷射、F2準分子雷射、EUV(極紫外線)、VUV(真空紫外線)、EB(電子束)、X射線、軟X射線等之放射線來進行。前述阻劑組成物,係作為KrF準分子雷射、ArF準分子雷射、EB或EUV用之有用性高,作為ArF準分子雷射、EB或EUV用之有用性更高,作為EB或EUV用之有用性特高。 The wavelength used for the exposure is not particularly limited, and an ArF excimer laser, a KrF excimer laser, an F 2 excimer laser, an EUV (very ultraviolet ray), a VUV (vacuum ultraviolet ray), an EB (electron beam), an X-ray can be used. It is carried out by radiation such as soft X-rays. The above-mentioned resist composition is useful for KrF excimer laser, ArF excimer laser, EB or EUV, and is more useful as ArF excimer laser, EB or EUV, as EB or EUV. It has a very high usefulness.

阻劑膜之曝光方法,可為於空氣或氮等之惰性氣體中進行之通常的曝光(乾式曝光)、亦可為液浸曝光(Liquid Immersion Lithography)。 The exposure method of the resist film may be a usual exposure (dry exposure) or a liquid immersion exposure (Liquid Immersion Lithography) performed in an inert gas such as air or nitrogen.

液浸曝光,為預先將阻劑膜與曝光裝置之最下位置的 透鏡間,以具有大於空氣之折射率的折射率之溶劑(液浸介質)充滿,於該狀態進行曝光(浸漬曝光)之曝光方法。 Liquid immersion exposure, in advance, the resist film and the lowest position of the exposure device An exposure method in which exposure (immersion exposure) is performed in a state where a solvent having a refractive index greater than the refractive index of air (liquid immersion medium) is filled between the lenses.

作為液浸介質,較佳為具有大於空氣之折射率、且小於所曝光之阻劑膜的折射率之折射率的溶劑。作為該溶劑之折射率,只要為前述範圍內則無特殊限制。 As the liquid immersion medium, a solvent having a refractive index greater than that of air and smaller than the refractive index of the exposed resist film is preferable. The refractive index of the solvent is not particularly limited as long as it is within the above range.

具有大於空氣之折射率、且小於前述阻劑膜之折射率的折射率之溶劑,可列舉例如水、氟系不活性液體、矽系溶劑、烴系溶劑等。 The solvent having a refractive index greater than the refractive index of air and smaller than the refractive index of the resist film may, for example, be water, a fluorine-based inactive liquid, an anthraquinone solvent, a hydrocarbon solvent or the like.

作為氟系不活性液體之具體例子,可列舉以C3HCl2F5、C4F9OCH3、C4F9OC2H5、C5H3F7等之氟系化合物為主成分的液體等,較佳為沸點70~180℃者、更佳為80~160℃者。氟系不活性液體若為具有上述範圍之沸點者,則曝光結束後,能夠以簡便的方法進行液浸所用介質之去除,故較佳。 Specific examples of the fluorine-based inactive liquid include fluorine compounds such as C 3 HCl 2 F 5 , C 4 F 9 OCH 3 , C 4 F 9 OC 2 H 5 , and C 5 H 3 F 7 . The liquid or the like is preferably a boiling point of 70 to 180 ° C, more preferably 80 to 160 ° C. When the fluorine-based inactive liquid has a boiling point in the above range, it is preferable to carry out the removal of the medium for liquid immersion by a simple method after the completion of the exposure.

作為氟系不活性液體,特佳為烷基的氫原子全部被氟原子取代之全氟烷基化合物。作為全氟烷基化合物,具體而言,可列舉全氟烷基醚化合物、全氟烷基胺化合物。 As the fluorine-based inactive liquid, a perfluoroalkyl compound in which all hydrogen atoms of an alkyl group are substituted with a fluorine atom is particularly preferred. Specific examples of the perfluoroalkyl compound include a perfluoroalkyl ether compound and a perfluoroalkylamine compound.

更具體而言,作為前述全氟烷基醚化合物,可列舉全氟(2-丁基-四氫呋喃)(沸點102℃),作為前述全氟烷基胺化合物,可列舉全氟三丁胺(沸點174℃)。 More specifically, examples of the perfluoroalkyl ether compound include perfluoro(2-butyl-tetrahydrofuran) (boiling point: 102° C.), and examples of the perfluoroalkylamine compound include perfluorotributylamine (boiling point). 174 ° C).

作為液浸介質,就成本、安全性、環境問題、通用性等之觀點,較佳使用水。 As the liquid immersion medium, water is preferably used from the viewpoints of cost, safety, environmental problems, versatility, and the like.

鹼顯影製程中顯影處理所用之鹼顯影液,可列舉例如0.1~10質量%氫氧化四甲基銨(TMAH)水溶液。 The alkali developer used for the development treatment in the alkali development process may, for example, be an aqueous solution of 0.1 to 10% by mass of tetramethylammonium hydroxide (TMAH).

溶劑顯影製程中顯影處理所用之有機系顯影液所含有的有機溶劑,只要係可溶解(A)成分(曝光前之(A)成分)者即可,可由公知之有機溶劑之中適當選擇。具體而言,可列舉酮系溶劑、酯系溶劑、醇系溶劑、腈系溶劑、醯胺系溶劑、醚系溶劑等之極性溶劑、烴系溶劑等。 The organic solvent contained in the organic developing solution used for the development processing in the solvent development process may be any one of the known organic solvents as long as it can dissolve the component (A) (component (A) before exposure). Specific examples thereof include a ketone solvent, an ester solvent, an alcohol solvent, a nitrile solvent, a guanamine solvent, a polar solvent such as an ether solvent, and a hydrocarbon solvent.

酮系溶劑,為於構造中包含C-C(=O)-C之有機溶劑。酯系溶劑為於構造中包含C-C(=O)-O-C之有機溶劑。醇系溶劑為於構造中包含醇性羥基之有機溶劑。「醇性羥基」,意指鍵結於脂肪族烴基之碳原子的羥基。腈系溶劑,為於構造中包含腈基之有機溶劑。醯胺系溶劑,為於構造中包含醯胺基之有機溶劑。醚系溶劑,為於構造中包含C-O-C之有機溶劑。 The ketone solvent is an organic solvent containing C-C(=O)-C in the structure. The ester solvent is an organic solvent containing C-C(=O)-O-C in the structure. The alcohol solvent is an organic solvent containing an alcoholic hydroxyl group in the structure. The "alcoholic hydroxyl group" means a hydroxyl group bonded to a carbon atom of an aliphatic hydrocarbon group. The nitrile solvent is an organic solvent containing a nitrile group in the structure. The amide-based solvent is an organic solvent containing a guanamine group in the structure. The ether solvent is an organic solvent containing C-O-C in the structure.

有機溶劑之中,亦存在有構造中包含複數種賦予上述各溶劑特徴之官能基的有機溶劑,此情況時,規定為相當於包含該有機溶劑所具有的官能基任何的溶劑種類。例如,二乙二醇單甲基醚,係相當於上述分類中之醇系溶劑、醚系溶劑的任何者。 Among the organic solvents, there are also organic solvents having a plurality of functional groups which impart a characteristic to each of the above-mentioned respective solvents, and in this case, it is defined to correspond to any solvent type including a functional group of the organic solvent. For example, diethylene glycol monomethyl ether is equivalent to any of an alcohol solvent or an ether solvent in the above classification.

烴系溶劑,係由可經鹵化之烴所成,且不具有鹵素原子以外之取代基的烴溶劑。作為鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等,較佳為氟原子。 The hydrocarbon solvent is a hydrocarbon solvent which is formed of a halogenated hydrocarbon and which does not have a substituent other than a halogen atom. The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom.

有機系顯影液所含有的有機溶劑,於上述之中尤以極性溶劑為佳;更佳為酮系溶劑、酯系溶劑、腈系溶劑等。 The organic solvent contained in the organic developing solution is preferably a polar solvent, and more preferably a ketone solvent, an ester solvent or a nitrile solvent.

作為酮系溶劑,可列舉例如1-辛酮、2-辛酮、1-壬酮、2-壬酮、丙酮、4-庚酮、1-己酮、2-己酮、 二異丁基酮、環己酮、甲基環己酮、苯基丙酮、甲基乙基酮、甲基異丁基酮、乙醯基丙酮、丙酮基丙酮、紫羅酮、二丙酮醇、乙醯基原醇、苯乙酮、甲基萘基酮、異佛酮、碳酸伸丙酯、γ-丁內酯、甲基戊基酮(2-庚酮)等。此等之中,作為酮系溶劑,尤以甲基戊基酮(2-庚酮)為佳。 Examples of the ketone solvent include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 4-heptanone, 1-hexanone, and 2-hexanone. Diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetyl ketone, acetone acetone, ionone, diacetone alcohol, Ethyl mercaptoate, acetophenone, methylnaphthyl ketone, isophorone, propyl carbonate, γ-butyrolactone, methyl amyl ketone (2-heptanone) and the like. Among these, as the ketone solvent, methyl amyl ketone (2-heptanone) is preferred.

作為酯系溶劑,可列舉例如乙酸甲酯、乙酸丁酯、乙酸乙酯、乙酸異丙酯、乙酸戊酯、乙酸異戊酯、甲氧基乙酸乙酯、乙氧基乙酸乙酯、丙二醇單甲基醚乙酸酯、乙二醇單乙基醚乙酸酯、乙二醇單丙基醚乙酸酯、乙二醇單丁基醚乙酸酯、乙二醇單苯基醚乙酸酯、二乙二醇單甲基醚乙酸酯、二乙二醇單丙基醚乙酸酯、二乙二醇單乙基醚乙酸酯、二乙二醇單苯基醚乙酸酯、二乙二醇單丁基醚乙酸酯、二乙二醇單乙基醚乙酸酯、乙酸2-甲氧基丁酯、乙酸3-甲氧基丁酯、乙酸4-甲氧基丁酯、乙酸3-甲基-3-甲氧基丁酯、乙酸3-乙基-3-甲氧基丁酯、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丙基醚乙酸酯、乙酸2-乙氧基丁酯、乙酸4-乙氧基丁酯、乙酸4-丙氧基丁酯、乙酸2-甲氧基戊酯、乙酸3-甲氧基戊酯、乙酸4-甲氧基戊酯、乙酸2-甲基-3-甲氧基戊酯、乙酸3-甲基-3-甲氧基戊酯、乙酸3-甲基-4-甲氧基戊酯、乙酸4-甲基-4-甲氧基戊酯、丙二醇二乙酸酯、甲酸甲酯、甲酸乙酯、甲酸丁酯、甲酸丙酯、乳酸乙酯、乳酸丁酯、乳酸丙酯、碳酸乙酯、碳酸丙酯、碳酸丁酯、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、丙酮酸丁酯、乙醯乙酸甲酯、乙 醯乙酸乙酯、丙酸甲酯、丙酸乙酯、丙酸丙酯、丙酸異丙酯、2-羥基丙酸甲酯、2-羥基丙酸乙酯、丙酸甲基-3-甲氧酯、丙酸乙基-3-甲氧酯、丙酸乙基-3-乙氧酯、丙酸丙基-3-甲氧酯等。此等之中,酯系溶劑尤以乙酸丁酯為佳。 Examples of the ester solvent include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, amyl acetate, isoamyl acetate, ethyl methoxyacetate, ethyl ethoxyacetate, and propylene glycol. Methyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, ethylene glycol monobutyl ether acetate, ethylene glycol monophenyl ether acetate , diethylene glycol monomethyl ether acetate, diethylene glycol monopropyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monophenyl ether acetate, two Ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, 2-methoxybutyl acetate, 3-methoxybutyl acetate, 4-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, 3-ethyl-3-methoxybutyl acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl Ether acetate, 2-ethoxybutyl acetate, 4-ethoxybutyl acetate, 4-propoxybutyl acetate, 2-methoxypentyl acetate, 3-methoxypentyl acetate, 4-methoxypentyl acetate, 2-methyl-3-methoxypentyl acetate, 3-methyl-3-methoxypentyl acid, 3-methyl-4-methoxypentyl acetate, 4-methyl-4-methoxypentyl acetate, propylene glycol diacetate, formic acid Ester, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, ethyl carbonate, propyl carbonate, butyl carbonate, methyl pyruvate, ethyl pyruvate, pyruvic acid Propyl ester, butyl pyruvate, methyl acetate methyl acetate, B Ethyl acetate, methyl propionate, ethyl propionate, propyl propionate, isopropyl propionate, methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate, methyl-3-methyl propionate Oxy ester, ethyl-3-methoxypropionate, ethyl-3-ethoxypropionate, propyl-3-methoxypropionate, and the like. Among these, the ester solvent is preferably butyl acetate.

作為腈系溶劑,可列舉例如乙腈、丙腈、戊腈、丁腈等。 Examples of the nitrile-based solvent include acetonitrile, propionitrile, valeronitrile, and butyronitrile.

有機系顯影液中,可依需要摻合公知之添加劑。作為該添加劑,例如可列舉界面活性劑。作為界面活性劑,並無特殊限定,例如可使用離子性或非離子性之氟系及/或矽系界面活性劑等。作為界面活性劑,較佳為非離子性之界面活性劑;更佳為非離子性之氟系界面活性劑、或非離子性之矽系界面活性劑。 In the organic developer, a known additive may be blended as needed. As such an additive, a surfactant is mentioned, for example. The surfactant is not particularly limited, and for example, an ionic or nonionic fluorine-based and/or a lanthanoid surfactant can be used. As the surfactant, a nonionic surfactant is preferred; a nonionic fluorine-based surfactant or a nonionic lanthanide surfactant is more preferred.

摻合界面活性劑時,其摻合量,相對於有機系顯影液之全部量而言,通常為0.001~5質量%、較佳為0.005~2質量%、更佳為0.01~0.5質量%。 When the surfactant is blended, the blending amount thereof is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, and more preferably 0.01 to 0.5% by mass based on the total amount of the organic developing solution.

顯影處理,可藉由公知之顯影方法實施,可列舉例如於顯影液中浸漬支持體一定時間之方法(浸漬法)、於支持體表面將顯影液藉由表面張力隆起,靜止一定時間之方法(槳式法)、對支持體表面噴霧顯影液之方法(噴霧法)、於以一定速度旋轉之支持體上以一定速度一邊使顯影液塗出噴嘴掃描一邊持續塗出顯影液之方法(動態分配(dynamic dispense)法)等。 The development treatment can be carried out by a known development method, and for example, a method of immersing the support in a developer for a certain period of time (dipping method), and a method of swelling the developer on the surface of the support by a surface tension for a certain period of time (for a certain period of time) Paddle method), a method of spraying a developer on a surface of a support (spray method), and a method of continuously applying a developer while spraying a developer at a constant speed on a support rotating at a constant speed (dynamic dispensing) (dynamic dispense) method).

溶劑顯影製程中顯影處理後之潤洗處理所用的潤洗液所含有的有機溶劑,例如可於作為前述有機系顯 影液所用的有機溶劑所列舉之有機溶劑當中,適當選擇不易溶解阻劑圖型者來使用。通常,係使用由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑、醯胺系溶劑及醚系溶劑中選擇地至少1種溶劑。此等之中,尤以由烴系溶劑、酮系溶劑、酯系溶劑、醇系溶劑及醯胺系溶劑中選擇的至少1種為佳;更佳為由醇系溶劑及酯系溶劑中選擇的至少1種;特佳為醇系溶劑。 The organic solvent contained in the rinsing liquid used for the rinsing treatment after the development treatment in the solvent developing process can be, for example, the organic system Among the organic solvents exemplified as the organic solvent used for the liquid solution, those who do not easily dissolve the resist pattern are appropriately used. Usually, at least one solvent selected from the group consisting of a hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, a guanamine solvent, and an ether solvent is used. Among these, at least one selected from the group consisting of a hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, and a guanamine solvent is preferred; more preferably, it is selected from an alcohol solvent and an ester solvent. At least one of them; particularly preferred is an alcohol solvent.

潤洗液所用的醇系溶劑,較佳為碳數6~8之1元醇,該1元醇可為直鏈狀、分支狀或環狀之任意者。具體而言,可列舉1-己醇、1-庚醇、1-辛醇、2-己醇、2-庚醇、2-辛醇、3-己醇、3-庚醇、3-辛醇、4-辛醇、苄基醇等。此等之中,尤以1-己醇、2-庚醇、2-己醇為佳;更佳為1-己醇、2-己醇。 The alcohol solvent used in the rinse liquid is preferably a hydrocarbon having 6 to 8 carbon atoms, and the monohydric alcohol may be any of a linear chain, a branched chain or a cyclic chain. Specific examples thereof include 1-hexanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, and 3-octanol. , 4-octanol, benzyl alcohol, and the like. Among these, 1-hexanol, 2-heptanol, and 2-hexanol are preferable; more preferably 1-hexanol or 2-hexanol.

此等有機溶劑,可單獨使用任1種、亦可合併使用2種以上。又,亦可與上述以外之有機溶劑或水混合來使用。惟,考慮顯影特性時,潤洗液中之水的摻合量,相對於潤洗液之全部量而言,較佳為30質量%以下、更佳為10質量%以下、又更佳為5質量%以下、特佳為3質量%以下。 These organic solvents may be used alone or in combination of two or more. Further, it may be used by mixing with an organic solvent other than the above or water. However, in consideration of the development property, the blending amount of water in the rinse liquid is preferably 30% by mass or less, more preferably 10% by mass or less, and still more preferably 5% based on the total amount of the rinse liquid. The mass% or less is particularly preferably 3% by mass or less.

潤洗液中,可依需要摻合公知之添加劑。作為該添加劑,可列舉例如界面活性劑。界面活性劑可列舉與前述相同者,較佳為非離子性之界面活性劑;更佳為非離子性之氟系界面活性劑、或非離子性之矽系界面活性劑。 In the rinse solution, a known additive may be blended as needed. As such an additive, a surfactant is mentioned, for example. The surfactant is preferably the same as the above, and is preferably a nonionic surfactant; more preferably a nonionic fluorine-based surfactant or a nonionic lanthanide surfactant.

摻合界面活性劑時,其摻合量,相對於潤洗液之全部 量而言,通常為0.001~5質量%、較佳為0.005~2質量%、更佳為0.01~0.5質量%。 When the surfactant is blended, the blending amount is relative to the entire lotion The amount is usually 0.001 to 5% by mass, preferably 0.005 to 2% by mass, more preferably 0.01 to 0.5% by mass.

使用潤洗液之潤洗處理(洗淨處理),可藉由公知之潤洗方法實施。作為該潤洗處理之方法,可列舉例如於以一定速度旋轉之支持體上持續塗出潤洗液之方法(旋轉塗佈法)、於潤洗液中浸漬支持體一定時間之方法(浸漬法)、對支持體表面噴霧潤洗液之方法(噴霧法)等。 The rinsing treatment (washing treatment) using the rinsing liquid can be carried out by a known rinsing method. As a method of the rinsing treatment, for example, a method of continuously applying a rinsing liquid to a support rotating at a constant speed (spin coating method), and a method of immersing the support in the rinsing liquid for a certain period of time (dipping method) ), a method of spraying a lotion on the surface of the support (spray method), and the like.

以上說明的本實施形態之阻劑組成物,含有通式(b1)表示之化合物(B1),作為酸產生劑成分。因此,於上述實施形態之阻劑圖型形成方法中,可在良好地保持解像性能、粗度改善、形狀等之微影特性之下,實現高感度化。 The resist composition of the present embodiment described above contains the compound (B1) represented by the formula (b1) as an acid generator component. Therefore, in the resist pattern forming method of the above embodiment, high sensitivity can be achieved while maintaining the lithographic properties such as resolution, thickness improvement, and shape.

(B1)成分,具有具備特定電子吸引性基之芳香環(Rb1)。此外,(B1)成分,於芳香環(Rb1)以外,具有由2個芳香環(Rb21、Rb22)、與位於此等之間,共有構成各芳香環之鍵結的噻吩環所構成之多環式基。具有該構造之(B1)成分,曝光所致之酸的產生效率有提高。 The component (B1) has an aromatic ring (R b1 ) having a specific electron attracting group. Further, the component (B1) has, in addition to the aromatic ring (R b1 ), a thiophene ring composed of two aromatic rings (R b21 and R b22 ) and a bond between the two aromatic rings (R b1 ) and the respective aromatic rings. Multi-ring base. With the component (B1) having such a structure, the production efficiency of acid due to exposure is improved.

此外,含有該(B1)成分與基材成分(A)之阻劑組成物,對曝光光源容易得到高感度,特別是對EB或EUV光源容易得到高感度。因此,本實施形態之阻劑組成物,作為EB或EUV用微影之感光材料係特別適合者。 Further, the resist composition containing the component (B1) and the substrate component (A) can easily obtain high sensitivity to an exposure light source, and in particular, it is easy to obtain high sensitivity to an EB or EUV light source. Therefore, the resist composition of the present embodiment is particularly suitable as a photosensitive material for lithography for EB or EUV.

(化合物) (compound)

本發明之第3態樣之化合物,為下述通式(b1)表示 者。 The compound of the third aspect of the present invention is represented by the following formula (b1) By.

[式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位)。Rb10表示烷基、氟化烷基或芳基。Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環。Rb20表示烷基、氟化烷基或芳基。Z表示硫原子、氧原子、羰基或單鍵。Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環。X-表示相對陰離子(惟,BF4 -除外)]。 Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) In time, the electron-attracting group is bonded to at least one of the benzene rings. R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group. R b21 and R b22 each independently represent an aromatic ring which may have an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 . R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group. Z represents a sulfur atom, an oxygen atom, a carbonyl group or a single bond. R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. R b1 and R b22 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula. X - represents a relative anion (except BF 4 - except).

該第3態樣之化合物,係與上述第1態樣之阻劑組成物的說明中之(B1)成分為相同的化合物。 The compound of the third aspect is the same as the component (B1) in the description of the resist composition of the first aspect.

[化合物((B1)成分)之製造方法] [Method for producing compound ((B1) component)]

(B1)成分,可使用公知之方法製造。 The component (B1) can be produced by a known method.

作為(B1)成分之製造方法,可列舉例如包含以下所示之第1~2步驟的製造方法。 The production method of the component (B1) includes, for example, a production method including the first to second steps shown below.

各步驟所用之化合物,可使用市售者、亦可使用經合成者。 The compound used in each step can be used as a commercial one or a synthetic one.

作為第1~2步驟之各反應中之溶劑,只要係各步驟所用之化合物可溶解,且不與該化合物反應者即可,可列舉例如二氯甲烷、二氯乙烷、氯仿、四氫呋喃、N,N-二甲基甲醯胺、二甲基乙醯胺、二甲基亞碸、乙腈、丙腈等。 The solvent used in the respective reactions in the first to second steps may be, for example, dichloromethane, dichloroethane, chloroform, tetrahydrofuran or N, as long as the compound used in each step is soluble and does not react with the compound. , N-dimethylformamide, dimethylacetamide, dimethyl hydrazine, acetonitrile, propionitrile, and the like.

.第1步驟 . Step 1

第1步驟中,係藉由於溶劑中混合化合物(I)、化合物(II)與TMS-X”進行反應,得到含有前驅物之化合物(III)的反應液。 In the first step, a reaction liquid containing the precursor compound (III) is obtained by reacting the compound (I) and the compound (II) with TMS-X in a solvent.

進行該混合時的混合時間,係依化合物彼此的反應性或反應溫度等來適當設定。 The mixing time at the time of the mixing is appropriately set depending on the reactivity of the compounds, the reaction temperature, and the like.

得到反應液後,於所得之反應液中添加水,藉由進行自水相中萃取溶劑、濃縮乾固,得到化合物(IV)。 After the reaction liquid was obtained, water was added to the obtained reaction liquid, and the solvent was extracted from the aqueous phase and concentrated to dryness to give Compound (IV).

[式中,Rb1、Rb21、Rb22及Z,係與通式(b1)中之Rb1、Rb21、Rb22及Z相同。Xh表示鹵素原子。TMS意指三甲基矽烷基。X”表示相對陰離子]。 [wherein, R b1 , R b21 , R b22 and Z are the same as R b1 , R b21 , R b22 and Z in the formula (b1). X h represents a halogen atom. TMS means trimethyldecylalkyl. X" represents a relative anion].

前述式中,Xh中之鹵素原子,可列舉氟原子、氯原子、溴原子、碘原子等。 In the above formula, the halogen atom in X h may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom.

X”中之相對陰離子,可列舉Br-、Cl-、CF3SO3 -等。 Examples of the relative anion in X" include Br - , Cl - , CF 3 SO 3 - and the like.

.第2步驟 . Step 2

第2步驟中,係藉由於溶劑中混合化合物(III)、與鹽交換用之化合物(IV)(鹽交換反應),得到目標化合物(b1-1)((B1)成分)。 In the second step, the target compound (b1-1) (component (B1)) is obtained by mixing the compound (III) in a solvent and the compound (IV) for salt exchange (salt exchange reaction).

進行該混合時的溫度(反應溫度),較佳為0~100℃左右、更佳為0~50℃左右。 The temperature (reaction temperature) at the time of the mixing is preferably about 0 to 100 ° C, more preferably about 0 to 50 ° C.

混合時間,係依照化合物彼此之反應性或反應溫度等而適當設定,例如較佳為10分鐘以上且24小時以下、更佳為10分鐘以上且12小時以下。 The mixing time is appropriately set depending on the reactivity of the compounds, the reaction temperature, and the like, and is preferably, for example, 10 minutes or longer and 24 hours or shorter, more preferably 10 minutes or longer and 12 hours or shorter.

[式中,Rb1、Rb21、Rb22、Z及X-,係與通式(b1)中之Rb1、Rb21、Rb22、Z及X-相同。X”表示相對陰離子。M’+ 為銨陽離子]。 [wherein, R b1 , R b21 , R b22 , Z and X - are the same as R b1 , R b21 , R b22 , Z and X - in the formula (b1). X" represents a relative anion. M' + is an ammonium cation].

鹽交換反應結束後,亦可將反應液中之化合物單離、精製。單離、精製可利用以往公知之方法,例如,可適當組合濃縮、溶劑萃取、蒸餾、結晶化、再結晶、層析等來使用。 After completion of the salt exchange reaction, the compound in the reaction solution may be isolated and purified. The separation and purification can be carried out by a conventionally known method, and for example, concentration, solvent extraction, distillation, crystallization, recrystallization, chromatography, or the like can be appropriately used.

如上述般所得到之化合物的構造,可藉由1H-核磁共振(NMR)光譜法、13C-NMR光譜法、19F-NMR光譜法、紅外線吸收(IR)光譜法、質譜(MS)法、元素分析法、X射線結晶繞射法等之一般的有機分析法來鑑定。 The structure of the compound obtained as described above can be obtained by 1 H-nuclear magnetic resonance (NMR) spectroscopy, 13 C-NMR spectroscopy, 19 F-NMR spectroscopy, infrared absorption (IR) spectroscopy, mass spectrometry (MS). It is identified by general organic analysis methods such as method, elemental analysis, and X-ray crystal diffraction.

(酸產生劑) (acid generator)

本發明之第4態樣之酸產生劑,係由上述第3態樣之化合物所構成者。 The acid generator of the fourth aspect of the present invention is composed of the compound of the third aspect described above.

該酸產生劑,有用於作為化學增幅型阻劑組成物用之酸產生劑成分。藉由使用該酸產生劑成分於化學增幅型阻劑組成物,於阻劑圖型形成中,會良好地保持曝光裕度、CDU、解像性能、LWR等之微影特性,且可實現高感度化。特別對於EB或EUV光源容易得到高的感度。 The acid generator has an acid generator component for use as a chemically amplified resist composition. By using the acid generator component in the chemically amplified resist composition, the lithographic characteristics of exposure margin, CDU, resolution, LWR, etc. are well maintained in the formation of the resist pattern, and high achievable Sensitive. Especially for EB or EUV light sources, high sensitivity is easily obtained.

[實施例] [Examples]

以下藉由實施例以更詳細說明本發明,但本發明不受此等例子限定。 The invention is illustrated in more detail below by way of examples, but the invention is not limited by the examples.

本實施例中,將化學式(1)表示之化合物表述為「化合物(1)」,關於其他化學式表示之化合物亦同樣地表 述。 In the present embodiment, the compound represented by the chemical formula (1) is expressed as "compound (1)", and the compounds represented by other chemical formulas are also expressed in the same manner. Said.

<化合物之製造例> <Production Example of Compound> (實施例1) (Example 1)

於1000mL三口燒瓶中,添加金屬鎂(13.75g)與四氫呋喃(THF),於50℃攪拌而得到溶液。於該溶液中滴下3,5-二氟溴苯(108.08g)之四氫呋喃溶液(236.16g),藉由進行加熱攪拌1小時,配製3,5-二氟苯基鎂溴化物溶液。 Magnesium metal (13.75 g) and tetrahydrofuran (THF) were added to a 1000 mL three-necked flask, and the mixture was stirred at 50 ° C to obtain a solution. A solution of 3,5-difluorobromobenzene (108.08 g) in tetrahydrofuran (236.16 g) was added dropwise to the solution, and the mixture was stirred with heating for 1 hour to prepare a 3,5-difluorophenyl magnesium bromide solution.

於2000mL三口燒瓶內,於亞碸A(37.38g)之四氫呋喃溶液(323.61g)中,添加三甲基矽烷基三氟甲烷磺酸酯(TMSTF)(248.93g),於冰浴攪拌而得到反應溶液。於該反應溶液中添加前述3,5-二氟苯基鎂溴化物溶液,進行1小時熟成。 In a 2000 mL three-necked flask, trimethylsulfonyltrifluoromethanesulfonate (TMSTF) (248.93 g) was added to a solution of hydrazine A (37.38 g) in tetrahydrofuran (323.61 g), and stirred in an ice bath to obtain a reaction. Solution. The 3,5-difluorophenyl magnesium bromide solution was added to the reaction solution, and the mixture was aged for 1 hour.

然後,以液體層析(LC)進行反應追蹤,添加純水使反應停止。以二氯甲烷自水相進行萃取、濃縮乾固,藉以得到目標前驅物(1)50g。 Then, the reaction was traced by liquid chromatography (LC), and pure water was added to stop the reaction. The extract was extracted from the aqueous phase with dichloromethane, and concentrated to dryness to obtain 50 g of the target precursor (1).

對所得之前驅物(1)進行NMR測定,由以下之測定結果鑑定其構造。 The obtained precursor (1) was subjected to NMR measurement, and its structure was identified from the following measurement results.

1H-NMR(400MHz,DMSO-d6)δ(ppm)=8.51(d,Ph,2H),8.41(d,Ph,2H),7.98(t,Ph,2H),7.76(t,Ph,2H),7.69(tt,Ph,1H),7.49(d,Ph,2H) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 8.51 (d, Ph, 2H), 8.41 (d, Ph, 2H), 7.98 (t, Ph, 2H), 7.76 (t, Ph, 2H ), 7.69 (tt, Ph, 1H), 7.49 (d, Ph, 2H)

於前驅物(1)(5.00g)之二氯甲烷溶液中,添加鹽交換用化合物(1)(4.34g),於室溫進行攪拌(鹽交換反應)30分鐘,得到反應混合溶液。 To the dichloromethane solution of the precursor (1) (5.00 g), the compound (1) (4.34 g) for salt exchange was added, and the mixture was stirred at room temperature for 30 minutes to obtain a reaction mixture solution.

攪拌後,對反應混合溶液添加純水(78.9g),使反應停止。去除水相,對有機相以純水進行4次洗淨。 After stirring, pure water (78.9 g) was added to the reaction mixture solution to stop the reaction. The aqueous phase was removed, and the organic phase was washed 4 times with pure water.

洗淨後,對有機相進行濃縮乾固,得到目標化合物(B1-4)5.75g之固體。 After washing, the organic phase was concentrated to dryness to give 5.75 g of the title compound (B1-4).

再者,以下反應式中,「-OTf」意指三氟甲烷磺酸陰離子。 Further, in the following reaction formula, " - OTf" means an trifluoromethanesulfonate anion.

(實施例2) (Example 2)

除了變更鹽交換用化合物以外,係與實施例1同樣地進行鹽交換反應等,得到目標化合物(B1-7)。 A salt exchange reaction or the like was carried out in the same manner as in Example 1 except that the compound for salt exchange was changed to obtain the target compound (B1-7).

亦即,於前驅物(1)(5.00g)之二氯甲烷溶液中添加鹽交換用化合物(2)(4.50g),於室溫進行攪拌(鹽交換反應)30分鐘,得到反應混合溶液。 In other words, the compound (2) (4.50 g) for salt exchange was added to a dichloromethane solution of the precursor (1) (5.00 g), and the mixture was stirred at room temperature for 30 minutes to obtain a reaction mixture solution.

攪拌後,對反應混合溶液添加純水(65.9g),使反應停止。去除水相,對有機相以純水進行4次洗淨。 After stirring, pure water (65.9 g) was added to the reaction mixture solution to stop the reaction. The aqueous phase was removed, and the organic phase was washed 4 times with pure water.

洗淨後,對有機相進行濃縮乾固,得到目標化合物(B1-7)5.49g之固體。 After washing, the organic phase was concentrated to dryness to give the title compound (B1-7).

(實施例3~38) (Examples 3 to 38)

除了分別變更鹽交換用化合物以外,係與實施例2同樣地進行鹽交換反應等,得到目標化合物(B1-1)~化合物(B1-3)、化合物(B1-5)、化合物(B1-6)、化合物(B1-8)~化合物(B1-38)。 A salt exchange reaction or the like was carried out in the same manner as in Example 2 except that the compound for salt exchange was changed, and the target compound (B1-1) to the compound (B1-3), the compound (B1-5), and the compound (B1-6) were obtained. ), compound (B1-8) to compound (B1-38).

(實施例39) (Example 39)

於1000mL三口燒瓶中,添加金屬鎂(12.83g)與四氫呋喃(THF),於50℃攪拌而得到溶液。於該溶液中滴下3-三氟甲基溴苯(117.58g)之四氫呋喃溶液(235.15g),藉由進行加熱攪拌1小時,配製3-三氟甲基苯基鎂溴化物溶液。 Magnesium metal (12.83 g) and tetrahydrofuran (THF) were added to a 1000 mL three-necked flask, and the mixture was stirred at 50 ° C to obtain a solution. A tetrahydrofuran solution (235.15 g) of 3-trifluoromethylbromobenzene (117.58 g) was added dropwise to the solution, and the mixture was stirred under heating for 1 hour to prepare a 3-trifluoromethylphenyl magnesium bromide solution.

於2000mL三口燒瓶內,於亞碸A(34.88g)之四氫呋喃溶液(301.95g)中添加三甲基矽烷基三氟甲烷磺酸酯(TMSTF)(232.27g),於冰浴攪拌而得到反應溶液。於該反 應溶液中添加前述3-三氟甲基苯基鎂溴化物溶液,進行1小時熟成。 Trimethyl decyl trifluoromethanesulfonate (TMSTF) (232.27 g) was added to a solution of yttrium A (34.88 g) in tetrahydrofuran (301.95 g) in a 2000 mL three-necked flask, and stirred in an ice bath to obtain a reaction solution. . In the opposite The 3-trifluoromethylphenyl magnesium bromide solution was added to the solution, and the mixture was aged for 1 hour.

然後,以液體層析(LC)進行反應追蹤,添加純水使反應停止。以二氯甲烷自水相進行萃取、濃縮乾固,藉以得到目標前驅物(2)50g。 Then, the reaction was traced by liquid chromatography (LC), and pure water was added to stop the reaction. The extract was extracted from the aqueous phase with dichloromethane, and concentrated to dryness to obtain 50 g of the target precursor (2).

對所得之前驅物(2)進行NMR測定,由以下之測定結果鑑定其構造。 The obtained precursor (2) was subjected to NMR measurement, and its structure was identified from the following measurement results.

1H-NMR(400MHz,DMSO-d6)δ(ppm)=8.60(s,Ph,1H),8.52(d,Ph,2H),8.41(d,Ph,2H),8.08(d,Ph,1H),7.98(t,Ph,2H),7.78(t,Ph,2H),7.70(t,Ph,1H),7.34(d,Ph,1H) 1 H-NMR (400MHz, DMSO-d6) δ (ppm) = 8.60 (s, Ph, 1H), 8.52 (d, Ph, 2H), 8.41 (d, Ph, 2H), 8.08 (d, Ph, 1H) ), 7.98 (t, Ph, 2H), 7.78 (t, Ph, 2H), 7.70 (t, Ph, 1H), 7.34 (d, Ph, 1H)

於前驅物(2)(5.00g)之二氯甲烷溶液中添加鹽交換用化合物(1)(5.33g),於室溫進行攪拌(鹽交換反應)30分鐘,得到反應混合溶液。 The compound (1) (5.33 g) for salt exchange was added to a dichloromethane solution of the precursor (2) (5.00 g), and the mixture was stirred at room temperature for 30 minutes to obtain a reaction mixture solution.

攪拌後,對反應混合溶液添加純水(92.7g),使反應停止。去除水相,對有機相以純水進行4次洗淨。 After stirring, pure water (92.7 g) was added to the reaction mixture solution to stop the reaction. The aqueous phase was removed, and the organic phase was washed 4 times with pure water.

洗淨後,對有機相進行濃縮乾固,得到目標化合物(B1-42)7.42g之固體。 After washing, the organic phase was concentrated to dryness to give the title compound (B1-42) 7.42 g.

再者,以下反應式中,「-OTf」意指三氟甲烷磺酸陰 離子。 Further, in the following reaction formula, " - OTf" means an trifluoromethanesulfonate anion.

(實施例40) (Embodiment 40)

除了變更鹽交換用化合物以外,係與實施例39同樣地進行鹽交換反應等,得到目標化合物(B1-45)。 A salt exchange reaction or the like was carried out in the same manner as in Example 39 except that the compound for salt exchange was changed to obtain the title compound (B1-45).

亦即,於前驅物(2)(5.00g)之二氯甲烷溶液中添加鹽交換用化合物(2)(4.20g),於室溫進行攪拌(鹽交換反應)30分鐘,得到反應混合溶液。 In other words, the compound (2) (4.20 g) for salt exchange was added to a dichloromethane solution of the precursor (2) (5.00 g), and the mixture was stirred at room temperature for 30 minutes to obtain a reaction mixture solution.

攪拌後,對反應混合溶液添加純水(66.5g),使反應停止。去除水相,對有機相以純水進行4次洗淨。 After stirring, pure water (66.5 g) was added to the reaction mixture solution to stop the reaction. The aqueous phase was removed, and the organic phase was washed 4 times with pure water.

洗淨後,對有機相進行濃縮乾固,得到目標化合物(B1-45)5.74g之固體。 After washing, the organic phase was concentrated to dryness to give the title compound (B1-45).

(實施例41~76) (Examples 41 to 76)

除了分別變更鹽交換用化合物以外,係與實施例40同樣地進行鹽交換反應等,得到目標化合物(B1-39)~化合物(B1-41)、化合物(B1-43)、化合物(B1-44)、化合物(B1-46)~化合物(B1-76)。 A salt exchange reaction or the like was carried out in the same manner as in Example 40 except that the compound for salt exchange was changed, and the target compound (B1-39) to the compound (B1-41), the compound (B1-43), and the compound (B1-44) were obtained. ), compound (B1-46) ~ compound (B1-76).

所得化合物(B1-1)~化合物(B1-76)之陽離子部及陰離子部的構造、以及NMR測定之結果,係如以下所示。 The structures of the cation portion and the anion portion of the obtained compound (B1-1) to the compound (B1-76) and the results of NMR measurement are as follows.

化合物(B1-1)~化合物(B1-38)之陽離子部 Cationic part of compound (B1-1)~ compound (B1-38)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=8.51(d,Ph,2H),8.41(d,Ph,2H),7.98(t,Ph,2H),7.76(t,Ph,2H),7.69(tt,Ph,1H),7.49(d,Ph,2H) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 8.51 (d, Ph, 2H), 8.41 (d, Ph, 2H), 7.98 (t, Ph, 2H), 7.76 (t, Ph, 2H ), 7.69 (tt, Ph, 1H), 7.49 (d, Ph, 2H)

化合物(B1-39)~化合物(B1-76)之陽離子部 Cationic part of compound (B1-39)~compound (B1-76)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=8.60(s,Ph,1H),8.52(d,Ph,2H),8.41(d,Ph,2H),8.08(d,Ph,1H),7.98(t,Ph,2H),7.78(t,Ph,2H),7.70(t,Ph,1H),7.34(d,Ph,1H) 1 H-NMR (400MHz, DMSO-d6) δ (ppm) = 8.60 (s, Ph, 1H), 8.52 (d, Ph, 2H), 8.41 (d, Ph, 2H), 8.08 (d, Ph, 1H) ), 7.98 (t, Ph, 2H), 7.78 (t, Ph, 2H), 7.70 (t, Ph, 1H), 7.34 (d, Ph, 1H)

化合物(B1-1)及化合物(B1-39)之陰離子部 Anion of compound (B1-1) and compound (B1-39)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.40(t,2H,CH2),4.21(t,2H,CH2),1.61-1.98(m,15H,Adamantyl) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.40 (t, 2H, CH 2), 4.21 (t, 2H, CH 2), 1.61-1.98 (m, 15H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.6 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.6

化合物(B1-2)及化合物(B1-40)之陰離子部 Anion of compound (B1-2) and compound (B1-40)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.40-4.50(m,4H,CH2) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 4.40 - 4.50 (m, 4H, CH 2 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.7,-154.0,-160.0,-161.5 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.7, -154.0, -160.0, -16.

化合物(B1-3)及化合物(B1-41)之陰離子部 Anion of compound (B1-3) and compound (B1-41)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.41(t,2H,CH2), 4.23(t,2H,CH2),0.79-2.89(m,21H,Undecanoyl) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.41 (t, 2H, CH 2), 4.23 (t, 2H, CH 2), 0.79-2.89 (m, 21H, Undecanoyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.8 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.8

化合物(B1-4)及化合物(B1-42)之陰離子部 Anion of compound (B1-4) and compound (B1-42)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.78(m,1H,CH),4.66(t,1H,CH),3.88(t,1H,CH),3.31-3.36(m,1H,CH),2.47-2.49(m,1H,CH),1.73-2.21(m,4H,CH2) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.78 (m, 1H, CH), 4.66 (t, 1H, CH), 3.88 (t, 1H, CH), 3.31-3.36 (m, 1H ,CH), 2.47-2.49 (m,1H,CH), 1.73-2.21 (m,4H,CH 2 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-107.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -107.7

化合物(B1-5)及化合物(B1-43)之陰離子部 Anion of compound (B1-5) and compound (B1-43)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=8.74-8.82(m,2H,Py-H),7.84(dd,2H,Py-H),4.54-4.61(m,4H,CH2CH2) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 8.74-8.82 (m, 2H, Py-H), 7.84 (dd, 2H, Py-H), 4.54-4.61 (m, 4H, CH 2 CH 2 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.5 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.5

化合物(B1-6)及化合物(B1-44)之陰離子部 Anion of compound (B1-6) and compound (B1-44)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=5.46(t,1H,oxo-norbornane),4.97(s,1H,oxo-norbornane),4.71(d,1H,oxo-norbornane),4.57(d,1H,oxo-norbornane),2.69-2.73(m,1H,oxo-norbornane),2.06-2.16(m,2H,oxo-norbornane). 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 5.46 (t, 1H, oxo-norbornane), 4.97 (s, 1H, oxo-norbornane), 4.71 (d, 1H, oxo-norbornane), 4.57 (d, 1H, oxo-norbornane), 2.69-2.73 (m, 1H, oxo-norbornane), 2.06-2.16 (m, 2H, oxo-norbornane).

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-107.1 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -107.1

化合物(B1-7)及化合物(B1-45)之陰離子部 Anion of compound (B1-7) and compound (B1-45)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.55(t,2H,CF2CH2),1.64-1.96(m,15H,Adamantyl) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 4.55 (t, 2H, CF 2 CH 2 ), 1.64-1.96 (m, 15H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -111.2

化合物(B1-8)及化合物(B1-46)之陰離子部 Anion of compound (B1-8) and compound (B1-46)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.40(t,2H,CH2),4.20(t,2H,CH2),2.05(s,2H,CH2),1.53-1.95(m,15H,Adamantyl) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.40 (t, 2H, CH 2), 4.20 (t, 2H, CH 2), 2.05 (s, 2H, CH 2), 1.53-1.95 ( m, 15H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -111.2

化合物(B1-9)及化合物(B1-47)之陰離子部 Anion of compound (B1-9) and compound (B1-47)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.19(s,2H,CH2),1.55-1.87(m,15H,Adamantyl) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 4.19 (s, 2H, CH 2 ), 1.55-1.87 (m, 15H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-77.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -77.7

化合物(B1-10)及化合物(B1-48)之陰離子部 Anion of compound (B1-10) and compound (B1-48)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=2.77-2.81(m,1H,Cyclohexyl),2.04-2.08(m,2H,Cyclohexyl),1.73-1.75(m,2H,Cyclohexyl),1.56-1.59(m,1H,Cyclohexyl),1.07-1.33(m,5H,Cyclohexyl) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 2.77-2.81 (m, 1H, Cyclohexyl), 2.04-2.08 (m, 2H, Cyclohexyl), 1.73-1.75 (m, 2H, Cyclohexyl), 1.56 -1.59 (m, 1H, Cyclohexyl), 1.07-1.33 (m, 5H, Cyclohexyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-74.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -74.7

化合物(B1-11)及化合物(B1-49)之陰離子部 Anion of compound (B1-11) and compound (B1-49)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=1.55-1.88(m,15H,Adamantyl) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 1.55-1.88 (m, 15H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-74.5 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -74.5

化合物(B1-12)及化合物(B1-50)之陰離子部 Anion of compound (B1-12) and compound (B1-50)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=2.13(m,3H,Adamantyl),1.56-1.96(m,12H,Adamantyl) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 2.13 (m, 3H, Adamantyl), 1.56-1.96 (m, 12H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-69.2,-76.0,-112.9 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -69.2, -76.0, -112.9

化合物(B1-13)及化合物(B1-51)之陰離子部 Anion of compound (B1-13) and compound (B1-51)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=7.51-7.96(m,7H,Naph),5.20(s,2H,CH2) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 7.51 - 7.96 (m, 7H, Naph), 5.20 (s, 2H, CH 2 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-80.5,-113.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -80.5, -113.7

化合物(B1-14)及化合物(B1-52)之陰離子部 Anion of compound (B1-14) and compound (B1-52)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=2.09(s,3H,Adamantyl),1.56-1.96(m,12H,Adamantyl) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 2.09 (s, 3H, Adamantyl), 1.56-1.96 (m, 12H, Adamantyl)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-70.1,-113.4 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -70.1, -113.4

化合物(B1-15)及化合物(B1-53)之陰離子部 Anion of compound (B1-15) and compound (B1-53)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-73.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -73.7

化合物(B1-16)及化合物(B1-54)之陰離子部 Anion of compound (B1-16) and compound (B1-54)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-161.1,-149.7,-131.6,-76.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -161.1, -149.7, -131.6, -76.2

化合物(B1-17)及化合物(B1-55)之陰離子部 Anion of compound (B1-17) and compound (B1-55)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=2.88(d,1H,CH),2.66-2.74(m,1H,CH),2.37(d,1H,CH),2.17-2.24(m,1H,CH),1.90(t,1H,CH),1.74-1.89(m,2H,CH2),1.22-1.29(m,2H,CH2),1.03(s,3H,CH3),0.71(s,3H,CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 2.88 (d, 1H, CH), 2.66-2.74 (m, 1H, CH), 2.37 (d, 1H, CH), 2.17-2.24 (m , 1H, CH), 1.90 (t, 1H, CH), 1.74-1.89 (m, 2H, CH 2 ), 1.22-1.29 (m, 2H, CH 2 ), 1.03 (s, 3H, CH 3 ), 0.71 (s, 3H, CH 3 )

化合物(B1-18)及化合物(B1-56)之陰離子部 Anion of compound (B1-18) and compound (B1-56)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-77.3,-111.5,-118.1,-122.4 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -77.3, -111.5, -118.1, -122.4

化合物(B1-19)及化合物(B1-57)之陰離子部 Anion of compound (B1-19) and compound (B1-57)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-75.0 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -75.0

化合物(B1-20)及化合物(B1-58)之陰離子部 Anion of compound (B1-20) and compound (B1-58)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-77.3,-112.5,-121.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -77.3, -112.5, -121.7

化合物(B1-21)及化合物(B1-59)之陰離子部 Anion of compound (B1-21) and compound (B1-59)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-116.9,-123.0 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -116.9, -123.0

化合物(B1-22)及化合物(B1-60)之陰離子部 Anion of compound (B1-22) and compound (B1-60)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-75.9,-76.0,-114.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -75.9, -76.0, -114.7

化合物(B1-23)及化合物(B1-61)之陰離子部 Anion of compound (B1-23) and compound (B1-61)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=5.83-5.92(m,1H,anion CH),5.41(dd,1H,anion CH),5.21(dd,1H,anion CH),4.45(s,2H,anion CH2) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 5.83-5.92 (m, 1H, anion CH), 5.41 (dd, 1H, anion CH), 5.21 (dd, 1H, anion CH), 4.45 ( s, 2H, anion CH 2 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-80.0,-113.0 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -80.0, -113.0

化合物(B1-24)及化合物(B1-62)之陰離子部 Anion of compound (B1-24) and compound (B1-62)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.49-4.51(m,2H,O-CH2),4.30-4.32(m,2H,O-CH2),2.31(t,2H,CO-CH2),1.51-1.56(m,2H,CH2),1.15-1.35(m,6H,CH2),0.87(t,3H,CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.49-4.51 (m, 2H, O-CH 2), 4.30-4.32 (m, 2H, O-CH 2), 2.31 (t, 2H, CO-CH 2 ), 1.51-1.56 (m, 2H, CH 2 ), 1.15-1.35 (m, 6H, CH 2 ), 0.87 (t, 3H, CH 3 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.7

化合物(B1-25)及化合物(B1-63)之陰離子部 Anion of compound (B1-25) and compound (B1-63)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.50-4.54(m,4H,OCH2CH2O),3.57(d,1H,CH2SO2),3.36(sd,1H,CH2SO2),2.24-2.34(m,2H,camphor),2.07(t,1H,camphor),1.92-1.99(m,2H,camphor),1.56-1.62(m,1H,camphor),1.42-1.45(m,1H,camphor),1.04(s,3H,CH3),0.84(s,3H,CH3). 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.50-4.54 (m, 4H, OCH 2 CH 2 O), 3.57 (d, 1H, CH 2 SO 2), 3.36 (sd, 1H, CH 2 SO 2 ), 2.24 - 2.34 (m, 2H, camphor), 2.07 (t, 1H, camphor), 1.92-1.99 (m, 2H, camphor), 1.56-1.62 (m, 1H, camphor), 1.42-1.45 (m, 1H, camphor), 1.04 (s, 3H, CH 3 ), 0.84 (s, 3H, CH 3 ).

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.5 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.5

化合物(B1-26)及化合物(B1-64)之陰離子部 Anion of compound (B1-26) and compound (B1-64)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.22(s,2H,CH2O),4.05(t,2H,CH2CF2),2.24(br s,2H,Adamantyl),1.53-1.99(m,15H,Adamantyl+CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.22 (s, 2H, CH 2 O), 4.05 (t, 2H, CH 2 CF 2), 2.24 (br s, 2H, Adamantyl), 1.53 -1.99 (m, 15H, Adamantyl + CH 3 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.0 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -111.0

化合物(B1-27)及化合物(B1-65)之陰離子部 Anion of compound (B1-27) and compound (B1-65)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.84(ddd,1H,CH2O),4.68(ddd,1H,CH2O),2.38-2.45(m,1H,camphanic),1.93-2.06(m,2H,camphanic),1.55-1.61(m,1H,camphanic),1.04(s,3H,CH3),1.03(s,3H,CH3),0.85(s,3H,CH3). 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.84 (ddd, 1H, CH 2 O), 4.68 (ddd, 1H, CH 2 O), 2.38-2.45 (m, 1H, camphanic), 1.93 -2.06 (m, 2H, camphanic), 1.55-1.61 (m, 1H, camphanic), 1.04 (s, 3H, CH 3 ), 1.03 (s, 3H, CH 3 ), 0.85 (s, 3H, CH 3 ) .

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.0 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -111.0

化合物(B1-28)及化合物(B1-66)之陰離子部 Anion of compound (B1-28) and compound (B1-66)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=5.02(s,1H,CH),4.21(s,1H,CH),2.93(s,1H,CH),1.41-2.29(m,10H,Hyper-lactone). 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 5.02 (s, 1H, CH), 4.21 (s, 1H, CH), 2.93 (s, 1H, CH), 1.41-2.29 (m, 10H , Hyper-lactone).

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-107.3 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -107.3

化合物(B1-29)及化合物(B1-67)之陰離子部 Anion of compound (B1-29) and compound (B1-67)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.39-4.60(m,4H,OCH2CH2O),2.36-2.53(m,1H,Camphane),1.88-2.03(m,2H,Camphane),1.47-1.62(m,1H,Camphane),0.81-1.11(m,9H,CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.39-4.60 (m, 4H, OCH 2 CH 2 O), 2.36-2.53 (m, 1H, Camphane), 1.88-2.03 (m, 2H, Camphane), 1.47-1.62 (m, 1H, Camphane), 0.81-1.11 (m, 9H, CH 3 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.6 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.6

化合物(B1-30)及化合物(B1-68)之陰離子部 Anion of compound (B1-30) and compound (B1-68)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=6.01(s,1H,C=CH),5.62(s,1H,C=CH),3.95-4.00(t,2H,CH2),3.09-3.15(t,2H,CH2),1.83(s,3H,CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 6.01 (s, 1H, C = CH), 5.62 (s, 1H, C = CH), 3.95-4.00 (t, 2H, CH 2), 3.09-3.15(t,2H,CH 2 ), 1.83(s,3H,CH 3 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-76.0 19 F-NMR (376MHz, DMSO -d6) δ (ppm) = - 76.0

化合物(B1-31)及化合物(B1-69)之陰離子部 Anion of compound (B1-31) and compound (B1-69)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=5.21(m,1H,CFH),4.82(m,1H,OCH2),4.57(m,1H,OCH2),2.51(m,1H,Camphane),2.03(m,2H,Camphane),1.59(m,1H,Camphane),1.10(s,6H,CH3),0.85(s,3H,CH3) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 5.21 (m, 1H, CFH), 4.82 (m, 1H, OCH 2), 4.57 (m, 1H, OCH 2), 2.51 (m, 1H ,Camphane), 2.03 (m, 2H, Camphane), 1.59 (m, 1H, Camphane), 1.10 (s, 6H, CH 3 ), 0.85 (s, 3H, CH 3 )

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-108.6,-116.5,-204.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -108.6, -116.5, -204.2

化合物(B1-32)及化合物(B1-70)之陰離子部 Anion of compound (B1-32) and compound (B1-70)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=6.22(m,1H,CH=CH),6.07(m,1H,CH=CH),4.76(m,1H,sultone),4.65-4.34(m,3H,CF2CH2+sultone),3.87(m,1H,sultone),3.58-3.38(m,3H,CHC=O+sultone),3.11(m,2H,Norbornene),2.37(m,1H,sultone),2.16(m,1H,sultone),1.89-1.66(m,3H,sultone),1.44-1.21(m,2H,Norbornene) 1 H-NMR (400 MHz, DMSO-d6) δ (ppm) = 6.22 (m, 1H, CH=CH), 6.07 (m, 1H, CH=CH), 4.76 (m, 1H, sultone), 4.65-4.34 (m, 3H, CF 2 CH 2 + sultone), 3.87 (m, 1H, sultone), 3.58-3.38 (m, 3H, CHC=O+sultone), 3.11 (m, 2H, Norbornene), 2.37 (m, 1H, sultone), 2.16 (m, 1H, sultone), 1.89-1.66 (m, 3H, sultone), 1.44-1.21 (m, 2H, Norbornene)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-118.5~-118.9 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -118.5~-118.9

化合物(B1-33)及化合物(B1-71)之陰離子部 Anion of compound (B1-33) and compound (B1-71)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=3.82-3.89(t,2H,CH2),3.00-3.08(t,2H,CH2),1.58-1.93(m,15H,Adamantane) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 3.82-3.89 (t, 2H, CH 2), 3.00-3.08 (t, 2H, CH 2), 1.58-1.93 (m, 15H, Adamantane)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-73.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -73.2

化合物(B1-34)及化合物(B1-72)之陰離子部 Anion of compound (B1-34) and compound (B1-72)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=4.61(dt,4H,CH2CF2),2.40-2.65(m,8H,CH2CH2),1.72(s,6H,CH3),1.66(s,6H,CH3). 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 4.61 (dt, 4H, CH 2 CF 2), 2.40-2.65 (m, 8H, CH 2 CH 2), 1.72 (s, 6H, CH 3 ), 1.66 (s, 6H, CH 3 ).

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.4 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -111.4

化合物(B1-35)及化合物(B1-73)之陰離子部 Anion of compound (B1-35) and compound (B1-73)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=6.1(s,1H,CH2=C),5.74(s,1H,CH2=C),4.58-4.67(t,2H,CH2),1.89(s,3H,CH3). 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 6.1 (s, 1H, CH 2 = C), 5.74 (s, 1H, CH 2 = C), 4.58-4.67 (t, 2H, CH 2 ), 1.89 (s, 3H, CH 3 ).

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-111.3 19 F-NMR (376MHz, DMSO -d6) δ (ppm) = - 111.3

化合物(B1-36)及化合物(B1-74)之陰離子部 Anion of compound (B1-36) and compound (B1-74)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=5.76(d,1H,CH),4.87-5.05(m,3H,CH),4.23(m,1H,CH),2.28-2.40(m,2H,oxosultone) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 5.76 (d, 1H, CH), 4.87-5.05 (m, 3H, CH), 4.23 (m, 1H, CH), 2.28-2.40 (m , 2H, oxosultone)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-106.7 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -106.7

化合物(B1-37)及化合物(B1-75)之陰離子部 Anion of compound (B1-37) and compound (B1-75)

1H-NMR(400MHz,DMSO-d6)δ(ppm)=9.36(m,2H,ArH),8.74(s,1H,ArH),4.92(t,4H,CH2) 1 H-NMR (400MHz, DMSO -d6) δ (ppm) = 9.36 (m, 2H, ArH), 8.74 (s, 1H, ArH), 4.92 (t, 4H, CH 2)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-110.9 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -110.9

化合物(B1-38)及化合物(B1-76)之陰離子部 Anion of compound (B1-38) and compound (B1-76)

19F-NMR(376MHz,DMSO-d6)δ(ppm)=-129.6,-158.7,-163.2 19 F-NMR (376 MHz, DMSO-d6) δ (ppm) = -129.6, -158.7, -163.2

<基材成分(聚合物)之製造例> <Production Example of Substrate Component (Polymer)>

本實施例所用之聚合物A-1~A-18,係藉由分別以特定莫耳比來使用提供構成各聚合物之構成單位的下述單體,使其自由基聚合而得到。 The polymers A-1 to A-18 used in the examples were obtained by radical polymerization of the following monomers which are used as constituent units of the respective polymers in a specific molar ratio.

對於聚合物A-1~A-18,於表1一併記載藉由13C-NMR所求得之該聚合物之共聚合組成比(聚合物中之各構成單位之比例(莫耳比))、藉由GPC測定所求得之標準聚苯乙烯換算之質量平均分子量(Mw)及分子量分散度(Mw/Mn)。 For the polymers A-1 to A-18, the copolymerization composition ratio of the polymer obtained by 13 C-NMR is shown in Table 1 (the ratio of each constituent unit in the polymer (mol ratio) The mass average molecular weight (Mw) and the molecular weight dispersion (Mw/Mn) in terms of standard polystyrene determined by GPC measurement.

<阻劑組成物之配製> <Preparation of Repressant Composition> (實施例77~110、比較例1~15) (Examples 77 to 110, Comparative Examples 1 to 15)

混合表2~5所示各成分並使其溶解,分別配製各例子的阻劑組成物。 The components shown in Tables 2 to 5 were mixed and dissolved, and the resist compositions of the respective examples were prepared.

表2~5中,各符號分別具有以下意義。[ ]內之數值為摻合量(質量份)。 In Tables 2 to 5, each symbol has the following meaning. The value in [ ] is the blending amount (parts by mass).

(A)-1~(A)-18:上述聚合物A-1~A-18。 (A)-1~(A)-18: The above polymers A-1 to A-18.

(B1)-1:由上述化合物(B1-4)所成之酸產生劑。 (B1)-1: an acid generator prepared from the above compound (B1-4).

(B1)-2:由上述化合物(B1-7)所成之酸產生劑。 (B1)-2: an acid generator formed from the above compound (B1-7).

(B1)-3:由上述化合物(B1-42)所成之酸產生劑。 (B1)-3: an acid generator prepared from the above compound (B1-42).

(B1)-4:由上述化合物(B1-45)所成之酸產生劑。 (B1)-4: an acid generator prepared from the above compound (B1-45).

(B2)-1~(B2)-5:由下述化學式(B2-1)~(B2-5)分別表示之化合物(B2-1)~(B2-5)所成之酸產生劑。 (B2)-1~(B2)-5: an acid generator prepared from the compounds (B2-1) to (B2-5) represented by the following chemical formulas (B2-1) to (B2-5).

(D)-1~(D)-10:由下述化學式(D-1)~(D-10)分別表示之化合物(D-1)~(D-10)所成之酸擴散控制劑。 (D)-1~(D)-10: an acid diffusion controlling agent formed by the compounds (D-1) to (D-10) represented by the following chemical formulas (D-1) to (D-10).

(S)-1:丙二醇單甲基醚乙酸酯/丙二醇單甲基醚=20/80(質量比)之混合溶劑。 (S)-1: a mixed solvent of propylene glycol monomethyl ether acetate / propylene glycol monomethyl ether = 20/80 (mass ratio).

<阻劑圖型之形成> <Formation of resist pattern>

於實施過六甲基二矽氮烷(HMDS)處理之8吋矽基板 上,分別將各例子的阻劑組成物使用旋轉器進行塗佈,於加熱板上以溫度100℃進行60秒之預烘烤(PAB)處理,乾燥以形成膜厚30nm之阻劑膜。 8 吋矽 substrate treated with hexamethyldioxane (HMDS) The resist compositions of the respective examples were coated with a spinner, and subjected to prebaking (PAB) treatment at a temperature of 100 ° C for 60 seconds on a hot plate, followed by drying to form a resist film having a film thickness of 30 nm.

接著,對前述阻劑膜,使用電子束描繪裝置JEOL-JBX-9300FS(日本電子股份有限公司製),以加速電壓100kV,進行目標尺寸為線寬50~26nm之1:1的Line and Space圖型(以下「LS圖型」)之描繪(曝光)。 Next, using the electron beam drawing device JEOL-JBX-9300FS (manufactured by JEOL Ltd.) for the resist film, a line and space chart with a target size of 1:1 line width of 50 to 26 nm was performed at an acceleration voltage of 100 kV. Drawing (exposure) of the type (hereinafter "LS pattern").

接著於23℃,使用2.38質量%氫氧化四甲基銨(TMAH)水溶液「NMD-3」(商品名、東京應化工業股份有限公司製),進行60秒之鹼顯影。 Then, at 23 ° C, a 2.38 mass % tetramethylammonium hydroxide (TMAH) aqueous solution "NMD-3" (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used, and alkali development was carried out for 60 seconds.

之後,使用純水進行60秒水潤洗,於110℃進行60秒之曝光後加熱(PEB)處理。 Thereafter, the mixture was rinsed with pure water for 60 seconds, and subjected to post-exposure heating (PEB) treatment at 110 ° C for 60 seconds.

其結果,形成線寬50~26nm之1:1的LS圖型。 As a result, a 1:1 LS pattern with a line width of 50 to 26 nm is formed.

[最適曝光量(Eop)之評估] [Evaluation of Optimum Exposure (Eop)]

求出藉由前述阻劑圖型之形成方法形成目標尺寸的LS圖型之最佳曝光量Eop(μC/cm2)。將其作為「Eop(μC/cm2)」示於表中。 The optimum exposure amount Eop (μC/cm 2 ) of the LS pattern of the target size was determined by the formation method of the above resist pattern. This is shown in the table as "Eop (μC/cm 2 )".

[解像性之評估] [Evaluation of resolution]

使用掃描型電子顯微鏡S-9380(日立High Technologies公司製)求得上述Eop中之極限解像度,具體而言,係自最佳曝光量Eop起每次使曝光量少許增大而形成LS圖型時,不倒塌地解像之圖型的最小尺寸。將其 作為「解像性能(nm)」示於表中。 The extreme resolution in the above Eop was obtained by using a scanning electron microscope S-9380 (manufactured by Hitachi High Technologies Co., Ltd.). Specifically, the exposure amount was slightly increased each time from the optimum exposure amount Eop to form an LS pattern. The smallest size of the pattern that does not collapse. Put it The "resolution performance (nm)" is shown in the table.

[LWR(線寬粗度)之評估] [LWR (Linewidth Width) Evaluation]

對於上述<阻劑圖型之形成>中所形成的LS圖型,求得表示LWR之尺度的3σ。將其作為「LWR(nm)」示於表中。 For the LS pattern formed in the above <Formation of Resistivity Pattern>, 3σ indicating the scale of LWR was obtained. This is shown in the table as "LWR (nm)".

「3σ」,表示藉由掃描型電子顯微鏡(加速電壓800V、商品名:S-9380、日立High Technologies公司製)於線之長度方向測定線位置400個部位,並由該測定結果所求得之標準偏差(σ)之3倍值(3σ)(單位:nm)。 "3σ" indicates that 400 points of the line position are measured in the longitudinal direction of the line by a scanning electron microscope (acceleration voltage 800V, trade name: S-9380, manufactured by Hitachi High Technologies Co., Ltd.), and the measurement result is obtained. 3 times the standard deviation (σ) (3σ) (unit: nm).

該3σ之值越小,意指線側壁之粗度越小,可得到更均勻之寬度的LS圖型。 The smaller the value of 3σ, the smaller the thickness of the side wall of the line, the more uniform width LS pattern can be obtained.

[LS圖型形狀之評估] [Evaluation of LS Pattern Shape]

藉由測長SEM(掃描型電子顯微鏡、加速電壓800V、商品名:S-9220、日立製作所公司製)觀察藉由前述<阻劑圖型之形成>所形成的LS圖型之形狀,將其結果作為「形狀」而示於表中。 The shape of the LS pattern formed by the formation of the above-mentioned <resist pattern pattern> was observed by a length measuring SEM (scanning electron microscope, acceleration voltage 800 V, trade name: S-9220, manufactured by Hitachi, Ltd.). The results are shown in the table as "shapes".

由表6~9所示結果,可確認到依照應用本發明之實施例的阻劑組成物時,可在良好保持解像性能、粗度改善、形狀等之微影特性之下,實現高感度化。 From the results shown in Tables 6 to 9, it was confirmed that when the resist composition of the embodiment of the present invention is applied, high sensitivity can be achieved under the lithographic characteristics of good resolution, thickness improvement, shape, and the like. Chemical.

<化合物之經時安定性> <The stability of the compound over time> (實施例111、比較例16) (Example 111, Comparative Example 16)

混合表10所示之各成分並溶解,配製評估用之試驗液(固體成分濃度10質量%)。 Each component shown in Table 10 was mixed and dissolved, and a test liquid for evaluation (solid content concentration: 10% by mass) was prepared.

表10中,各符號分別具有以下意義。 In Table 10, each symbol has the following meaning.

(B1)-5:下述化學式(B1-77)表示之化合物(B1-77)(上述之前驅物(1))。 (B1)-5: Compound (B1-77) represented by the following chemical formula (B1-77) (precursor (1) above).

(B2)-6:下述化學式(B2-6)表示之化合物(B2-6)。 (B2)-6: Compound (B2-6) represented by the following chemical formula (B2-6).

(D)-1:下述化學式(D-1)表示之化合物(D-1)。 (D)-1: Compound (D-1) represented by the following chemical formula (D-1).

(S)-2:丙二醇單甲基醚乙酸酯(PGMEA)。 (S)-2: Propylene glycol monomethyl ether acetate (PGMEA).

[經時安定性之評估] [Evaluation of stability over time]

將各例子之試驗液,於室溫下(23℃)靜置30日保存。 The test solutions of the respective examples were allowed to stand at room temperature (23 ° C) for 30 days.

該保存後,測定試驗液中所含有的(B1)成分及(B2)成分之各分解率,評估化合物之經時安定性。將該結果作為「分解率(%)」一併記載於表10。 After the storage, the respective decomposition rates of the (B1) component and the (B2) component contained in the test liquid were measured, and the stability with time of the compound was evaluated. This result is shown in Table 10 together as "decomposition rate (%)".

(B1)成分及(B2)成分之各分解率係如以下方式測定。 The respective decomposition rates of the (B1) component and the (B2) component were measured as follows.

將該保存前後之各例子的試驗液0.1g,以用乙腈1g正確稀釋而得的稀釋液為試樣,進行逆相高速液體層析(HPLC)測定。 0.1 g of the test solution of each of the examples before and after the storage was used as a sample, and a diluted solution obtained by accurately diluting 1 g of acetonitrile was used as a sample, and subjected to reverse phase high-speed liquid chromatography (HPLC).

將該測定中所得到之層析中來自(B1)成分之波峰面積、及來自(B2)成分之波峰面積於保存前後的變化之比例作為分解率(%)。 The ratio of the peak area of the component (B1) and the peak area of the component (B2) to the change before and after storage in the chromatogram obtained in the measurement was defined as the decomposition rate (%).

由表10所示之結果,可確認到在間位鍵結有氟原子的化合物(B1-77),相較於在對位鍵結有氟原子的化合物(B2-6)而言,分解率特別低、經時安定性優良。 From the results shown in Table 10, it was confirmed that the compound (B1-77) having a fluorine atom bonded to the meta position was compared with the compound (B2-6) having a fluorine atom bonded at the para position, and the decomposition rate was obtained. It is particularly low and has excellent stability over time.

又,由於化合物(B1-77)即使與化合物(D-1)合併使用 亦為安定,故有用於作為阻劑組成物之酸產生劑。 Also, since the compound (B1-77) is used in combination with the compound (D-1) It is also stable, so it has an acid generator for use as a resist composition.

Claims (7)

一種阻劑組成物,其係藉由曝光而產生酸,藉由酸的作用,對顯影液之溶解性會變化的阻劑組成物,其特徵在於含有藉由酸的作用,對顯影液之溶解性會變化之基材成分(A)、與下述通式(b1)表示之化合物(B1); [式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間(meta)位);Rb10表示烷基、氟化烷基或芳基;Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環;Rb20表示烷基、氟化烷基或芳基;Z表示硫原子、氧原子、羰基或單鍵;Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環;Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環;X-表示相對陰離子(惟,BF4 -除外)]。 A resist composition which is an resist which generates an acid by exposure and which has a change in solubility in a developing solution by an action of an acid, and is characterized in that it dissolves in a developing solution by an action of an acid a substrate component (A) having a change in properties, and a compound (B1) represented by the following formula (b1); Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) When the electron-attracting group is bonded to at least one of the benzene rings, R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group; and R b21 and R b22 each independently represent An aromatic ring of an electron-attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group and -SO 2 R b20 ; R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group; a sulfur atom, an oxygen atom, a carbonyl group or a single bond; R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula; R b1 and R b22 It may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula; X - represents a relative anion (except for BF 4 - ). 如請求項1之阻劑組成物,其中前述化合物(B1)之含量,相對於前述基材成分(A)100質量份而言,為1~50質量份。 The resist composition of claim 1, wherein the content of the compound (B1) is from 1 to 50 parts by mass based on 100 parts by mass of the base component (A). 如請求項1或2之阻劑組成物,其中前述基材成分(A),含有高分子化合物(A1),且該高分子化合物(A1),具有含有藉由酸的作用而極性會增大之酸分解性基的構成單位(a1)。 The resist composition of claim 1 or 2, wherein the substrate component (A) contains a polymer compound (A1), and the polymer compound (A1) has a polarity which increases by an action of an acid The constituent unit (a1) of the acid-decomposable group. 一種阻劑圖型形成方法,其具有:於支持體上使用如請求項1~3中任一項之阻劑組成物而形成阻劑膜之步驟、使前述阻劑膜曝光之步驟、及將前述曝光後之阻劑膜顯影而形成阻劑圖型之步驟。 A resist pattern forming method, comprising: a step of forming a resist film by using a resist composition according to any one of claims 1 to 3 on a support, a step of exposing the resist film, and The step of developing the resist film after the exposure to form a resist pattern. 如請求項4之阻劑圖型形成方法,其中於使前述阻劑膜曝光之步驟中,係使EUV(極紫外線)或EB(電子束)對前述阻劑膜曝光。 The method of forming a resist pattern according to claim 4, wherein in the step of exposing the resist film, EUV (extreme ultraviolet ray) or EB (electron beam) is exposed to the resist film. 一種下述通式(b1)表示之化合物; [式中,Rb1表示具有選自由氟原子、三氟甲基、硝基、氰基及-SO2Rb10所成之群的電子吸引性基之芳香環(惟,前述芳香環為苯環時,前述電子吸引性基係鍵結於苯環的至少一方之間位);Rb10表示烷基、氟化烷基或芳基;Rb21及Rb22係分別獨立地表示可具有選自由氟原子、三氟甲基、 硝基、氰基及-SO2Rb20所成之群的電子吸引性基之芳香環;Rb20表示烷基、氟化烷基或芳基;Z表示硫原子、氧原子、羰基或單鍵;Rb1與Rb21,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環;Rb1與Rb22,亦可透過硫原子、氧原子、羰基或單鍵而鍵結,並與式中之硫原子一起形成環;X-表示相對陰離子(惟,BF4 -除外)]。 a compound represented by the following formula (b1); Wherein R b1 represents an aromatic ring having an electron attracting group selected from the group consisting of a fluorine atom, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b10 (except that the aforementioned aromatic ring is a benzene ring) When the electron-attracting group is bonded to at least one of the benzene rings; R b10 represents an alkyl group, a fluorinated alkyl group or an aryl group; and R b21 and R b22 each independently represent a group selected from the group consisting of fluorine An aromatic ring of an electron-attracting group of a group of atoms, a trifluoromethyl group, a nitro group, a cyano group, and -SO 2 R b20 ; R b20 represents an alkyl group, a fluorinated alkyl group or an aryl group; and Z represents a sulfur atom, An oxygen atom, a carbonyl group or a single bond; R b1 and R b21 may also be bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and form a ring together with a sulfur atom in the formula; R b1 and R b22 may also It is bonded through a sulfur atom, an oxygen atom, a carbonyl group or a single bond, and forms a ring together with a sulfur atom in the formula; X - represents a relative anion (except for BF 4 - ). 一種酸產生劑,其係由如請求項6之化合物所構成。 An acid generator consisting of the compound of claim 6.
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