TW201731119A - Method and apparatus of manufacturing HBC-crystalline solar cell - Google Patents
Method and apparatus of manufacturing HBC-crystalline solar cell Download PDFInfo
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- TW201731119A TW201731119A TW105132205A TW105132205A TW201731119A TW 201731119 A TW201731119 A TW 201731119A TW 105132205 A TW105132205 A TW 105132205A TW 105132205 A TW105132205 A TW 105132205A TW 201731119 A TW201731119 A TW 201731119A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000012535 impurity Substances 0.000 claims abstract description 27
- 238000000137 annealing Methods 0.000 claims abstract description 24
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 125
- 239000013078 crystal Substances 0.000 claims description 73
- 238000005192 partition Methods 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 128
- 150000002500 ions Chemical class 0.000 description 55
- 238000005468 ion implantation Methods 0.000 description 40
- 238000010438 heat treatment Methods 0.000 description 23
- 244000126211 Hericium coralloides Species 0.000 description 20
- 239000007789 gas Substances 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 239000011574 phosphorus Substances 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000000059 patterning Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000011068 loading method Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010248 power generation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000009772 tissue formation Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
本發明係關於一種可謀求製造步驟之簡化之HBC型結晶系太陽電池之製造方法及製造裝置。The present invention relates to a method and apparatus for producing an HBC-type crystalline solar cell which can simplify the manufacturing steps.
先前，關於將結晶系矽用作基板之太陽電池(HBC型結晶系太陽電池)，眾所周知於背接觸型太陽電池可獲得較高之發電效率。其中，於異質型之背接觸型(HBC(Heterojunction back contact，異質接面背接觸)型)HBC型結晶系太陽電池中，確認到世界最高之發電效率，受到多方面關注。 於此種HBC型結晶系太陽電池中，包含n型非晶Si層之部位與包含p型非晶Si層之部位介隔i型非晶Si層分別局部存在地配置且相互隔開地構成於矽基板之背面(位於光入射面之相反側之面)。已知為了獲得此種構成，HBC型結晶系太陽電池係經過如圖16A～圖16J所示般之步驟而製造(例如，日本專利特開2012-243797號公報所揭示之先前技術等)。 圖16A～圖16J係表示先前之HBC型結晶系太陽電池之製造方法之一例的模式性剖視圖。具體而言，於圖16A中，對矽1001之單面成膜i型非晶Si層1002及n型非晶Si層1003。於圖16B中，於n型非晶Si層1003上形成具有所期望之圖案之抗蝕劑1004。於圖16C中，使用抗蝕劑1004，對i型非晶Si層1002及n型非晶Si層1003進行蝕刻。於圖16D中，於蝕刻後，將抗蝕劑1004剝離。於圖16E中，形成蝕刻終止層1005。將蝕刻終止層1005作為遮罩，對未形成n型非晶Si層之間隔部之蝕刻終止層1005進行蝕刻。進而，於蝕刻終止層1005上，於矽1001之整個區域成膜i型非晶Si層1006及p型非晶Si層1007。 於圖16F中，於間隔部形成抗蝕劑1008。於圖16G中，使用抗蝕劑1008，對i型非晶Si層1006及p型非晶Si層1007進行蝕刻。於圖16H中，於蝕刻後，將抗蝕劑1008剝離。於圖16I中，將蝕刻終止層1005剝離。於圖16J中，於i型非晶Si層1002彼此之間隔部及n型非晶Si層1003與p型非晶Si層1007之間隔部，成膜i型非晶Si層1009。 亦即，於先前之HBC型結晶系太陽電池之製造方法中，藉由經過上述多個步驟(圖16A～圖16J)，可首先製作包含n型非晶Si層1003及p型非晶Si層1007之特定之圖案區域。為了形成上述特定之圖案區域，必須進行多次光微影或蝕刻等方法。然而，若利用此種方法進行圖案化，則如圖16A～圖16J所示般步驟之數量增加，而導致生產線之成本提高，進而，難以削減太陽電池之製造成本。 因此，期待可解決上述先前之問題之HBC型結晶系太陽電池之製造方法及製造裝置之開發。In the past, a solar cell (HBC type crystal solar cell) using a crystallization system as a substrate is known to have high power generation efficiency in a back contact type solar cell. Among them, in the heterogeneous type of back contact type (HBC (Heterojunction back contact) type) HBC type crystal solar cell, the world's highest power generation efficiency has been confirmed, and various concerns have been paid. In such an HBC-type crystal solar cell, a portion including an n-type amorphous Si layer and a portion including a p-type amorphous Si layer are disposed in a partially localized manner and are spaced apart from each other. The back side of the substrate (the side opposite to the light incident surface). In order to obtain such a configuration, it is known that the HBC-type crystalline solar cell is produced by the steps shown in FIGS. 16A to 16J (for example, the prior art disclosed in Japanese Laid-Open Patent Publication No. 2012-243797, etc.). 16A to 16J are schematic cross-sectional views showing an example of a method of manufacturing a conventional HBC-type crystal solar cell. Specifically, in FIG. 16A, an i-type amorphous Si layer 1002 and an n-type amorphous Si layer 1003 are formed on one side of the crucible 1001. In FIG. 16B, a resist 1004 having a desired pattern is formed on the n-type amorphous Si layer 1003. In FIG. 16C, the i-type amorphous Si layer 1002 and the n-type amorphous Si layer 1003 are etched using the resist 1004. In FIG. 16D, after etching, the resist 1004 is peeled off. In FIG. 16E, an etch stop layer 1005 is formed. The etch stop layer 1005 is used as a mask, and the etch stop layer 1005 in which the spacer of the n-type amorphous Si layer is not formed is etched. Further, on the etching stopper layer 1005, an i-type amorphous Si layer 1006 and a p-type amorphous Si layer 1007 are formed over the entire region of the crucible 1001. In FIG. 16F, a resist 1008 is formed in the spacer. In FIG. 16G, the i-type amorphous Si layer 1006 and the p-type amorphous Si layer 1007 are etched using the resist 1008. In FIG. 16H, after etching, the resist 1008 is peeled off. In FIG. 16I, the etch stop layer 1005 is peeled off. In FIG. 16J, an i-type amorphous Si layer 1009 is formed in a space between the i-type amorphous Si layer 1002 and a portion between the n-type amorphous Si layer 1003 and the p-type amorphous Si layer 1007. That is, in the conventional method for manufacturing a HBC-type crystal solar cell, by performing the above-described plurality of steps (FIGS. 16A to 16J), the n-type amorphous Si layer 1003 and the p-type amorphous Si layer can be first formed. The specific pattern area of 1007. In order to form the above-described specific pattern region, it is necessary to perform a method such as photolithography or etching a plurality of times. However, if patterning is performed by such a method, the number of steps increases as shown in FIGS. 16A to 16J, which leads to an increase in the cost of the production line, and further, it is difficult to reduce the manufacturing cost of the solar cell. Therefore, development of a manufacturing method and a manufacturing apparatus for an HBC-type crystalline solar cell that can solve the above-mentioned problems has been desired.
本發明係鑒於上述情況而完成者，其目的在於提供一種能夠大幅度削減製造HBC型結晶系太陽電池之步驟之數量之HBC型結晶系太陽電池之製造方法及製造裝置。 本發明之第1態樣之HBC型結晶系太陽電池之製造方法係使用具有非受光面且包含第一導電型之結晶系矽之基板，以覆蓋上述基板之上述非受光面之方式，形成i型非晶Si層，對上述非晶Si層，藉由利用遮罩之雜質導入法，於相互隔開之位置形成導電型與上述第一導電型相同之第1部位及導電型與上述第一導電型不同之第2部位，並對導入雜質後之上述非晶Si層實施退火處理。形成上述第1部位及上述第2部位之步驟包含：第1步驟，其形成上述第1部位之指狀部；第2步驟，其形成上述第1部位之匯流排部；第3步驟，其形成上述第2部位之指狀部；及第4步驟，其形成上述第2部位之匯流排部。 本發明之第1態樣之HBC型結晶系太陽電池之製造方法亦可為，於形成上述第1部位及上述第2部位之步驟中，以上述第1部位之指狀部與上述第2部位之指狀部成為隔著所期望之間隔部而相互對向地配置之位置的方式，使用具備特定形狀之開口部之複數個遮罩。 本發明之第1態樣之HBC型結晶系太陽電池之製造方法亦可為，於上述第1步驟中使用第1遮罩，於上述第2步驟中使用第2遮罩，於上述第3步驟中使用第3遮罩，於上述第4步驟中使用第4遮罩，第1遮罩及上述第2遮罩具有第1遮罩之開口部之一部分與上述第2遮罩之開口部之一部分重疊之區域，且第3遮罩及上述第4遮罩具有第3遮罩之開口部之一部分與上述第4遮罩之開口部之一部分重疊之區域。 本發明之第2態樣之HBC型結晶系太陽電池之製造裝置係於本發明之第1態樣之製造方法中使用之製造裝置，且作為用以於形成上述第1部位及上述第2部位之步驟中於將雜質導入至非晶Si層時形成上述第1部位及上述第2部位的遮罩，具備開口部之位置互不相同之第1遮罩、第2遮罩、第3遮罩、及第4遮罩。 本發明之第2態樣之HBC型結晶系太陽電池之製造裝置亦可為，上述第1遮罩及上述第2遮罩之開口部之區域與上述第3遮罩及上述第4遮罩之開口部之區域不相互重疊且以所期望之距離隔開。 本發明之第2態樣之HBC型結晶系太陽電池之製造裝置亦可以如下方式配置，即，設置於上述第2遮罩之單一之開口部縱貫設置於上述第1遮罩之相互隔開地並排配置之複數個開口部。 本發明之第2態樣之HBC型結晶系太陽電池之製造裝置亦可以如下方式配置，即，設置於上述第3遮罩之單一之開口部縱貫設置於上述第3遮罩之相互隔開地並排配置之複數個開口部。 [發明之效果] 本發明之實施形態之HBC型結晶系太陽電池之製造方法係對以覆蓋基板之形成非受光面側之一面之方式設置之i型非晶Si層，藉由利用遮罩之雜質導入法，於相互隔開之位置形成導電型與基板相同之部位A及導電型與基板不同之部位B之後，進行退火處理。藉此，對與設置於遮罩之開口部之形狀對應之非晶Si層之區域，形成經雜質導入而成之部位A及部位B，且部位A及部位B均內置於非晶Si層。此時，可藉由變更雜質導入條件，而針對部位A及部位B個別地自由地控制其深度方向上之濃度分佈或導入分佈。亦即，根據本發明之實施形態，能夠將部位A及部位B之區域三維地構築於非晶Si層之內部。又，雜質導入後之非晶Si層維持形成部位A及部位B之前之平坦之表面分佈。 於本發明之製造方法中，上述離子布植包含形成上述部位A之指狀部之步驟1、形成上述部位A之匯流排部之步驟2、形成上述部位B之指狀部之步驟3、及形成上述部位B之匯流排部之步驟4。 藉此，可僅藉由雜質導入將部位A之指狀部及匯流排部、以及部位B之指狀部及匯流排部全部以內置於非晶Si層之方式形成。 因此，無需先前藉由在形成i型非晶Si層之後，於上述非晶Si層上，藉由例如蒸鍍法或濺鍍法而成膜且進行圖案化而製作的匯流排部之製作步驟。 如上所述，根據本發明之實施形態，即便於形成部位A及部位B之後，非晶Si層之外表面亦維持平坦之分佈，故而可保持於後續步驟中形成之集電用電極膜之平坦性。 由此，亦可謀求為了使電極膜以分別重疊於部位A及部位B之匯流排部之方式殘留而進行之圖案化(光微影)處理之穩定化。 因此，本發明有助於提供能夠大幅度削減生產線之步驟之數量之HBC型結晶系太陽電池之製造方法。 本發明之實施形態之HBC型結晶系太陽電池之製造裝置係於上述製造方法中使用之製造裝置，且作為用以於上述第二步驟之雜質導入時形成上述部位A及上述部位B之遮罩，具備開口部之位置或形狀不同之4種遮罩M1、M2、M3、M4。藉此，能夠以不同之4個圖案依序分別製作被導入雜質之區域。例如，使用2個圖案形成部位A，並且使用剩餘之2個圖案形成部位B，藉此，可自由地設計配置部位A及部位B之區域之形狀。 更具體而言，利用遮罩M1形成部位A之梳齒部，利用遮罩M2形成連接部位A之梳齒部之連結部，利用遮罩M3形成部位B之梳齒部，並利用遮罩M4形成連接部位B之梳齒部之連結部，藉此，可將部位A及部位B均設為梳齒狀，於一者之梳齒部彼此之間隔開地配置另一者之梳齒部，且僅藉由進行雜質導入而於所期望之被處理體(覆膜)之內部形成將部位A及部位B之各梳齒部彼此分別電性連接之連結部。 因此，本發明可藉由與先前之製造方法相比極少之步驟數而製作HBC型結晶系太陽電池，故而有助於構築低成本之生產線。 又，根據本發明，可謀求配置部位A及部位B之區域之佈局之最佳化，故而亦有助於靈活地改善太陽電池之發電效率等特性。The present invention has been made in view of the above circumstances, and an object of the invention is to provide a method and a device for manufacturing an HBC-type crystalline solar cell capable of drastically reducing the number of steps for producing an HBC-type crystalline solar cell. In the method for producing an HBC-type crystal solar cell according to the first aspect of the present invention, a substrate having a non-light-receiving surface and containing a crystal system of a first conductivity type is used to cover the non-light-receiving surface of the substrate to form i. In the amorphous Si layer, the first portion and the conductivity type and the first type having the same conductivity type as the first conductivity type are formed at positions spaced apart from each other by the impurity introduction method using a mask The second portion having a different conductivity type is subjected to an annealing treatment on the amorphous Si layer after the impurity is introduced. The step of forming the first portion and the second portion includes: a first step of forming a finger portion of the first portion; a second step of forming a bus bar portion of the first portion; and a third step of forming a finger portion of the second portion; and a fourth step of forming a bus bar portion of the second portion. In the method of manufacturing the HBC-type crystal solar cell according to the first aspect of the present invention, in the step of forming the first portion and the second portion, the finger portion and the second portion of the first portion may be The finger portions are placed at positions facing each other across a desired space, and a plurality of masks having openings having a specific shape are used. In the method of manufacturing the HBC-type crystal solar cell according to the first aspect of the present invention, the first mask may be used in the first step, and the second mask may be used in the second step, in the third step. In the fourth step, the fourth mask is used, and the first mask and the second mask have a portion of the opening of the first mask and a portion of the opening of the second mask. In the overlapping region, the third mask and the fourth mask have a region where one of the openings of the third mask partially overlaps with one of the openings of the fourth mask. The manufacturing apparatus of the HBC type crystal solar cell according to the second aspect of the present invention is the manufacturing apparatus used in the manufacturing method of the first aspect of the present invention, and is configured to form the first portion and the second portion. In the step of introducing the impurities into the amorphous Si layer, the masks of the first portion and the second portion are formed, and the first mask, the second mask, and the third mask having different positions of the openings are provided. And the 4th mask. In the apparatus for manufacturing an HBC-type crystal solar cell according to a second aspect of the present invention, the first mask and the opening of the second mask may be in the region of the third mask and the fourth mask. The areas of the openings do not overlap each other and are separated by a desired distance. The manufacturing apparatus of the HBC type crystal solar cell according to the second aspect of the present invention may be arranged such that a single opening provided in the second mask is vertically spaced apart from the first mask. A plurality of openings arranged side by side. The manufacturing apparatus of the HBC type crystal solar cell according to the second aspect of the present invention may be arranged such that a single opening provided in the third mask is disposed to be spaced apart from each other by the third mask. A plurality of openings arranged side by side. [Effect of the Invention] The method for producing an HBC-type crystal solar cell according to the embodiment of the present invention is to cover the i-type amorphous Si layer provided on one side of the non-light-receiving surface of the substrate, by using a mask. In the impurity introduction method, the portion A having the same conductivity type as the substrate and the portion B having a different conductivity type from the substrate are formed at positions spaced apart from each other, and then annealed. Thereby, the portion A and the portion B through which the impurities are introduced are formed in the region of the amorphous Si layer corresponding to the shape of the opening provided in the mask, and both the portion A and the portion B are built in the amorphous Si layer. At this time, by changing the impurity introduction conditions, the concentration distribution or the introduction distribution in the depth direction can be freely controlled for the portion A and the portion B individually. That is, according to the embodiment of the present invention, the regions of the portion A and the portion B can be three-dimensionally constructed inside the amorphous Si layer. Further, the amorphous Si layer after the introduction of the impurities maintains a flat surface distribution before the formation of the portion A and the portion B. In the manufacturing method of the present invention, the ion implantation includes a step 1 of forming the finger portion of the portion A, a step 2 of forming the bus bar portion of the portion A, a step 3 of forming the finger portion of the portion B, and Step 4 of forming the bus bar portion of the above portion B. Thereby, all of the finger portion and the bus bar portion of the portion A and the finger portion and the bus bar portion of the portion B can be formed by being introduced into the amorphous Si layer only by impurity introduction. Therefore, it is not necessary to fabricate a bus bar portion which is formed on the amorphous Si layer by a vapor deposition method or a sputtering method, and is patterned by patterning, for example, after forming an i-type amorphous Si layer. . As described above, according to the embodiment of the present invention, even after the formation of the portion A and the portion B, the outer surface of the amorphous Si layer maintains a flat distribution, so that the flatness of the collector electrode film formed in the subsequent step can be maintained. Sex. Therefore, it is also possible to stabilize the patterning (photolithography) treatment in order to leave the electrode film so as to overlap the bus bar portions of the portion A and the portion B, respectively. Therefore, the present invention contributes to a method of producing an HBC-type crystalline solar cell in which the number of steps of the production line can be drastically reduced. The apparatus for manufacturing an HBC-type crystal solar cell according to the embodiment of the present invention is a manufacturing apparatus used in the above-described manufacturing method, and is a mask for forming the portion A and the portion B at the time of introduction of impurities in the second step. There are four kinds of masks M1, M2, M3, and M4 having different positions or shapes of the openings. Thereby, the region into which the impurity is introduced can be sequentially formed in four different patterns. For example, the pattern A is formed using two patterns, and the portion B is formed using the remaining two patterns, whereby the shape of the region of the arrangement portion A and the portion B can be freely designed. More specifically, the comb portion of the portion A is formed by the mask M1, the joint portion of the comb portion of the joint portion A is formed by the mask M2, and the comb portion of the portion B is formed by the mask M3, and the mask M4 is used. The connecting portion of the comb tooth portion of the joint portion B is formed, whereby the portion A and the portion B can be formed in a comb-tooth shape, and the other comb portion can be disposed apart from each other. Further, only the connection portion that electrically connects the respective comb-tooth portions of the portion A and the portion B to each other inside the desired object to be processed (coating film) is formed by introducing the impurities. Therefore, the present invention can produce an HBC-type crystalline solar cell by a very small number of steps compared to the prior art manufacturing method, and thus contributes to the construction of a low-cost production line. Moreover, according to the present invention, it is possible to optimize the layout of the regions where the parts A and B are arranged, and it is also advantageous to flexibly improve characteristics such as power generation efficiency of the solar cell.
以下，基於圖式對本發明之實施形態之HBC型結晶系太陽電池之製造方法之一實施形態進行說明。 圖1係對本發明之實施形態之HBC型結晶系太陽電池100G(100)之構成進行說明的圖。 於本實施形態中，參照圖2A～圖2G對製造圖1所示之HBC型結晶系太陽電池之方法進行詳細敍述。 於本發明之實施形態之HBC型結晶系太陽電池100G(100)中，下述之「n+ 部位及p+ 部位」係以覆蓋基板之背面(光入射面之相反側：於圖1中為下表面)之方式形成，且藉由離子布植法而形成於i型非晶Si層內部之背面附近(靠近背面之區域)。 再者，於本實施形態中，為了形成n+ 部位及p+ 部位而使用非質量分離型之離子布植法(電漿摻雜法)，但本發明並不限定該方法。只要為將雜質原子以離子之狀態導入至非晶Si層之方法，則雜質導入法並不限定於非質量分離型之離子布植法，利用質量分離型之離子布植法等亦能夠將雜質導入至非晶Si層。於以下之說明中，作為雜質導入法之代表例，使用非質量分離型之離子布植法進行詳細敍述，為了簡便起見，將非質量分離型之離子布植表達為「離子布植」。 本發明之實施形態之HBC型結晶系太陽電池100G具備基板101，該基板101具有供光(圖1所示之箭頭)入射之第1面101a、及位於與第1面101a為相反側之第2面101b(非受光面)，且包含表現光電轉換功能之第一導電型(例如，n型半導體)之結晶系矽。進而，HBC型結晶系太陽電池100G具備i型非晶Si層102，該i型非晶Si層102係以覆蓋基板101之第2面101b之方式配置。 又，於HBC型結晶系太陽電池100G中，以內置於非晶Si層102且於上述非晶Si層102之外表面側露出一部分之方式，相互隔開地配置有與上述第一導電型相同之導電型(例如，n+ 型)之部位(A)103及與上述第一導電型不同之導電型之部位(B)104。於圖1中，部位(C)表示部位(A)103與部位(B)104之間隔部。部位(A)103相當於本發明之第1部位(部位A)。部位(B)104相當於本發明之第2部位(部位B)。 即，本發明之實施形態之HBC型結晶系太陽電池100G表示部位(A)103及部位(B)104分別為對基板101之表層部布植所期望之元素而形成之局部存在區域的情形。 於圖1中，符號d1表示非晶Si層102之厚度，符號d2表示部位(A)103及部位(B)104之深度。作為上述非晶Si層102之厚度d1之一例，可列舉約20 nm。部位(A)103及部位(B)104係藉由利用下述之遮罩之離子布植法而形成。 根據該方法，藉由對非晶Si層102實施用以分別製作部位(A)103及部位(B)104之離子布植處理，便可形成部位(A)103及部位(B)104。 圖2A～圖2G係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。以下，將「非晶Si」略記為「a-Si」。 利用圖2A～圖4B對用以製造本發明之實施形態之HBC型結晶系太陽電池100G之各步驟詳細進行說明。首先，對包含結晶系矽之基板101進行例如將氫氧化鉀(KOH)或氫氧化鈉(NaOH)用作蝕刻劑之濕式蝕刻處理。然後，使用硝氟酸將殘存於處理後之基板101之有機物及金屬污染物去除。藉此，如圖2A所示般，以成為具有組織之形狀之方式對第1面101a(主面)進行加工(預處理步驟)。 於具有加工成上述具有組織之形狀之第1面101a之基板101之第2面101b，以特定之條件，藉由例如CVD(Chemical Vapor Deposition，化學氣相沈積)法而成膜i型a-Si層102(第一步驟：圖2B)。 於以下之第二步驟中，個別地使用特定之遮罩M1～M4，對i型a-Si層102之表面102b布植所期望之離子。於圖2C～圖2F中，遮罩M1～M4之下方所示之箭頭表示離子之布植方向。 如圖2C所示，於i型a-Si層102之外表面102b之附近區域(靠近外表面102b之部分)，配置遮罩M1(第1遮罩、圖3A)。然後，通過設置於遮罩M1之開口部S1，對i型a-Si層102之外表面102b局部地布植磷(P)離子等n型離子。藉此，形成n+ 部位(A)103中之梳齒部103f(圖4A)(使用遮罩M1之第二步驟)。 如圖2D所示，於i型a-Si層102之外表面102b之附近區域，代替遮罩M1而配置遮罩M2(第2遮罩、圖3B)。然後，通過設置於遮罩M2之開口部S2，對i型a-Si層102之外表面102b局部地布植磷(P)離子等n型離子。藉此，形成n+ 部位(A)103中之連結部103b(使用遮罩M2之第二步驟)。其結果，獲得之前所製作之梳齒部103f彼此藉由連結部103b而分別電性連接之n+ 部位(A)103。 如圖2E所示，於i型a-Si層102之外表面102b之附近區域，代替遮罩M2而配置遮罩M3(第3遮罩、圖3C)。然後，通過設置於遮罩M3之開口部S3，對n+ 部位(A)103之梳齒部103f彼此之間且不與n+ 部位(A)103重疊之位置局部地布植硼(B)離子等p型離子。藉此，形成p+ 部位(B)104中之梳齒部104f(圖4B)(使用遮罩M3之第二步驟)。 如圖2F所示，於i型a-Si層102之外表面102b之附近區域，代替遮罩M3而配置遮罩M4(第4遮罩、圖3D)。然後，通過設置於遮罩M4之開口部S4，對i型a-Si層102之外表面102b局部地布植硼(B)離子等p型離子。藉此，形成p+ 部位(B)104中之連結部104b(使用遮罩M4之第二步驟)。其結果，獲得之前所製作之梳齒部104f彼此藉由連結部104b而分別電性連接之p+ 部位(B)104。 藉由使用上述遮罩M1～M4之第二步驟，而形成HBC型結晶系太陽電池100G，該HBC型結晶系太陽電池100G係以內置於i型a-Si層102且於上述a-Si層102之外表面側露出一部分之方式，相互隔開地配置與基板101之第一導電型相同之導電型(例如，n+ 型)之部位(A)103及與上述第一導電型不同之導電型之部位(B)104而成(圖2G)。此處，部位(C)表示位於i型a-Si層102且部位(A)與部位(B)之間之間隔部。 進而，於本發明之實施形態之HBC型結晶系太陽電池之製造方法中，對以覆蓋基板之形成非受光面側之一面之方式設置之i型非晶Si層，藉由利用遮罩之離子布植法，於相互隔開之位置形成導電型與基板101相同之部位A及導電型與基板101不同之部位B之後，進行退火處理(第三步驟)。 藉此，可藉由使用開口部之形狀不同之遮罩，而對非晶Si層之區域自由地製作經離子布植而成之部位A103及部位B104。該部位A及部位B均內置於非晶Si層102，可藉由變更離子布植條件而針對部位A及部位B個別地自由地控制非晶Si層之深度方向上之濃度分佈或布植分佈。 根據該利用遮罩之離子布植法，可將部位A及部位B之區域三維地構築於非晶Si層102之內部。進而，於將離子布植至非晶Si層102之後之非晶Si層102之外表面102b，維持形成部位A及部位B之前之平坦之表面分佈。因此，於後續步驟中形成之電極膜或反射膜亦保持平坦性，可謀求為了使電極膜以重疊於部位A及部位B之各者之方式殘留而進行之圖案化(光微影)處理之穩定化。 再者，亦可採用於基板101之第1面101a視需要配置未圖示之抗反射層(Anti Reflection Layer：AR層)之構成。作為抗反射層(未圖示)，例如，可較佳地使用絕緣性之氮化膜、氮化矽膜、氧化鈦膜、氧化鋁膜等。 圖5～圖8係表示本發明之實施形態之製造裝置所具備之遮罩M1～M4之另一例的模式俯視圖。圖9A及圖9B係表示使用圖5～圖8所示之遮罩而形成之離子布植部之一例的模式俯視圖。 上述圖3A～圖3D表示開口部之配置為實驗級別之構成例。相對於此，圖5～圖8係開口部之配置為實用級別(充分地有效利用基板之整個區域)之構成例。圖5～圖8之各圖中所記載之數字係以mm為單位之尺寸。 於遮罩M1(圖5)，隔開間距0.7 mm之間隔而並排配置有7條0.3 mm寬度之開口部S1。為了形成圖1中之n+ 部位(A)103中之梳齒部103f，出於與圖3A所示之遮罩M1相同之目的，而亦使用圖5所示之遮罩M1。 即，如圖9A及圖9B所示，藉由圖5所示之遮罩M1而形成之各梳齒部703f之前端位置係以呈直線(下方之二點鏈線)之方式構成。又，各梳齒部703f之後端位置係以與使用圖6所示之遮罩M2而製作之沿著基板之緣之連結部703b之位置(上方之二點鏈線)重疊的方式構成。 於遮罩M2(圖6)，於朝內側距離基板之緣0.5 mm之位置配置有2 mm寬度之開口部S2，為了形成圖1中之n+ 部位(A)103中之連結部103b，出於與圖3B所示之遮罩M2相同之目的，而亦使用圖6所示之遮罩M2。 即，如圖9A及圖9B所示，藉由圖6所示之遮罩M2而製作之連結部703b係以沿著基板之緣配置且與上述各梳齒部703f之後端位置重疊之方式構成。藉此，構成n+ 部位(A)703之各梳齒部703f及連結部703b係作為電性連接之區域而發揮功能。 於遮罩M3(圖7)，隔開間距0.5 mm之間隔而並排配置有6條0.5 mm寬度之開口部S3。為了形成圖1中之p+ 部位(B)104中之梳齒部104f，出於與圖3C所示之遮罩M3相同之目的，而亦使用圖7所示之遮罩M3。 以遮罩M3(圖7)之開口部S3落在遮罩M1(圖5)之間距內且遮罩M3(圖7)之開口部S3與遮罩M1(圖5)之開口部S1形成相互隔開之位置的方式構成。亦即，於遮罩M1(圖5)之0.7 mm之間距內，配置遮罩M3(圖7)之0.5 mm之開口部S3，並且於遮罩M3(圖7)之0.5 mm之間距內，配置遮罩M1(圖5)之0.3 mm之開口部S1。 即，如圖9A及圖9B所示，藉由圖7所示之遮罩M3而製作之各梳齒部704f之前端位置係以呈直線(上方之二點鏈線)之方式構成。又，所製作之各梳齒部704f之後端位置係以與使用圖6所示之遮罩M2而製作之沿著基板之緣之連結部703b之位置(下方之二點鏈線)重疊的方式構成。 於遮罩M4(圖8)，於朝內側距離基板之緣0.5 mm之位置配置有2 mm寬度之開口部S2，為了形成圖1中之p+ 部位(B)104中之連結部104b，出於與圖3D所示之遮罩M4相同之目的，而亦使用圖8所示之遮罩M4。 即，如圖9A及圖9B所示，藉由圖8所示之遮罩M4而製作之連結部703b係以沿著基板之緣配置且與上述各梳齒部704f之後端位置重疊的方式構成。藉此，構成p+ 部位(B)704之各梳齒部703f及連結部703b係作為電性連接之區域而發揮功能。 再者，於圖5、圖7、圖9A、及圖9B中，圖示有各梳齒部703f、704f、以及相當於該梳齒部之7條開口部S1及6條開口部S3。於該等圖式中，此係為了容易理解各梳齒部之配置狀態、及梳齒部之各者相互隔開之狀態而簡單地表示，實際上係以之前所敍述之開口寬度及間隔，以充分地有效利用基板之整個區域之方式無間隙地配置。 藉由使用上述圖5～圖8所示之遮罩M1～M4之第二步驟，亦形成HBC型結晶系太陽電池100、200，該HBC型結晶系太陽電池100、200係以內置於i型a-Si層102且於上述a-Si層102之外表面側露出一部分之方式，相互隔開地配置與基板101之第一導電型相同之導電型(例如，n+ 型)之部位(A)103及與上述第一導電型不同之導電型之部位(B)104而成(圖1)。此處，部位(C)表示位於i型a-Si層102且部位(A)與部位(B)之間之間隔部。 以下，對本發明之實施形態之HBC型結晶系太陽電池之製造方法中所採用之離子布植之條件進行說明。 如上所述，於本發明之實施形態中，可藉由使用開口部之形狀不同之遮罩，而對非晶Si層之區域自由地製作經離子布植而成之部位A103及部位B104。該部位A及部位B均內置於非晶Si層102，可藉由變更離子布植條件而針對部位A及部位B個別地自由地控制其深度方向上之濃度分佈或布植分佈。 此處，如圖2B所示，i型a-Si層102自最初起便於厚度方向及面內方向上形成為單一之膜。因此，即便於已藉由在第一步驟之後進行之第二步驟而於i型a-Si層102之外表面102b之附近區域形成n+ 部位(A)103及p+ 部位(B)104的情形時，作為間隔部之部位(C)、即未進行離子布植之區域亦沿厚度方向以單一之膜之形式存在於i型a-Si層102內。 進而，藉由對作為單一之膜之i型a-Si層102以不到達至基板101之第2面101b之方式形成n+ 部位(A)103及p+ 部位(B)104而以相接之方式存在於基板101之第2面101b上的i型a-Si層102係以遍及基板101之面內方向連續之單一之膜之形式存在。 如此，圖2G所示之i型a-Si層102於n+ 部位(A)103及p+ 部位(B)104以外之區域以「單一之膜」之形式存在(此處，所謂「單一之膜」係指於i型a-Si層102之內部不存在界面)，藉此，維持i型a-Si層102之作為鈍化膜之功能。 相對於此，於圖16J所示之先前之構成中，為了形成n型a-Si層1003及p型a-Si層1007，而形成於該等層1003、1007與基板1001之間之i型a-Si層1002藉由蝕刻而遍及基板之面方向暫時形成間隔部(圖16C及圖16G所示之狀態)。最終，如圖16J所示般，獲得於該間隔部成膜i型a-Si層1009而將間隔部埋入之構造。因此，於圖16J所示之i型a-Si層，於基板之面內方向存在界面(圖16J所示之符號1002與符號1009之間之虛線相當於界面)。因此種界面之存在而導致於基板之面內方向膜變得不連續，而有i型a-Si層無法作為鈍化膜有效地發揮功能之虞。 圖11係表示硼(B)之離子能量(Ion Energy)與停止距離(Stopping Range)之關係之曲線圖。 停止距離係表示所布植之離子能夠於膜之深度方向上進入至膜之何處之指標。 根據該曲線圖，可知離子能量與停止距離處於若離子能量增加則離子被布植之深度變大之正比例之關係。 因此，可藉由選擇特定之離子能量而改變對i型a-Si層102離子布植硼(B)時以特定之深度停留之位置。藉由利用該關係，可再現性良好地形成圖1所示之p+ 部位(B)104。 若表示一例，則可藉由選擇3 keV作為離子能量，而獲得具有15 nm左右之深度之p+ 部位(B)104。於該情形時，若將圖1所示之i型a-Si層102之厚度d1設為20 nm，則未布植硼(B)離子而殘留之離子非布植部之厚度成為圖1中之(d1－d2)所示之值。具有該d1－d2之厚度之部分係遍及基板101之面內方向以單一之膜之形式存在於i型a-Si層102內。 作為離子布植時之離子能量，係如上述例般根據形成n+ 部位(A)103及p+ 部位(B)104之i型a-Si層102之厚度d1、作為鈍化膜所必需之i型a-Si層102之局部之厚度(d1－d2)、進而作為n+ 部位(A)103及p+ 部位(B)104所必需之厚度d2而選擇恰當之值。然而，若離子能量變大，則有如下問題，即，作為處理對象之i型a-Si層102之表面變粗糙，而無法保持平坦性。 因此，於對i型a-Si層102進行處理之情形時，作為離子能量(keV)，較佳為20以下，進而，若考慮i型a-Si層102之膜厚(即，i型a-Si層之厚度與希望作為鈍化膜而殘留之厚度之關係)，則可認為較佳為5以下。若離子能量(keV)為5以下，則成為利用更低能量之處理，因此，可保持i型a-Si層102之表面之平坦性。 再者，關於磷(P)，亦確認到上述硼(B)之離子能量與停止距離之關係成立。因此，可藉由利用該關係，而再現性良好地形成圖1所示之n+ 部位(A)103。進而，關於磷(P)，就作為形成n+ 部位(A)103之對象之i型a-Si層102之膜厚等條件、及i型a-Si層102之表面之平坦性之確保之用意而言，亦與硼(B)之情形同樣地，可藉由選擇20以下、進而5以下作為離子能量(keV)，而獲得與硼(B)之情形相同之效果。 圖12係表示改變磷(P)之離子能量而於基板之深度方向觀測到之磷(P)濃度之分佈的曲線圖。 根據該曲線圖，確認到如下內容，即，於將進行離子布植時之離子能量(keV)改變為3、6、15之情形時，磷濃度(原子/cm3 )成為10+18 之基板之深度方向之位置(nm)大概成為30(nm)、43(nm)、78(nm)。藉此，能夠以於上述深度之各個位置成為特定之磷濃度之方式於基板內於深度方向形成n+ 部位(A)103。 關於硼(B)，亦確認到與上述磷(P)之於基板之深度方向觀測到之磷(P)濃度之分佈相同之關係成立。因此，可藉由利用該關係，而以成為特定之硼濃度之方式於基板內於深度方向形成圖1所示之p+ 部位(B)104。 上述第二步驟中之離子之布植係使用例如圖13所示之離子布植裝置1200而進行。 圖13係本發明之實施形態中於n型離子布植步驟及p型離子布植步驟(第二步驟)中使用之離子布植裝置1200之剖視圖。離子布植裝置1200具備：真空槽1201；電漿產生部，其利用使用永久磁鐵1205、RF(Radio Frequency，射頻)導入線圈1206、及RF導入窗(石英)1212之ICP(Inductively Coupled Plasma，感應耦合電漿)放電；及真空排氣部(未圖示)。真空槽1201之內部係藉由具有複數個開口之電極1208、1209而分離成電漿產生室及電漿處理室。於電漿處理室配置有基板支持台1204，該基板支持台1204支持作為被處理體之基板1203(相當於組織形成步驟後之基板101)。再者，電極1208之電位設為浮動電位，電極1208具有使電漿1207之電位穩定之功能。又，電極1209被施加負電位，具有自電漿1207引出正離子之功能。 將真空槽1201內減壓，而將包含對基板1203布植之雜質原子之氣體導入至電漿產生室。然後，使用電漿產生部使電漿1207激發，藉此，可使雜質原子離子化，並使經由電極1208、1209而引出之p型或n型之離子布植至基板1203。 此處，p型離子之布植量或n型離子之布植量係根據下述之退火處理後之p+ 部位(B)104之薄片電阻、及n+ 部位(A)103之薄片電阻與HBC型結晶系太陽電池之光電轉換效率的關係，而決定為於製造HBC型結晶系太陽電池100方面之最佳值。其中，n+ 部位(A)103中之n型離子之濃度係設定為至少高於基板101中之n型離子之濃度。 再者，於對基板1203進行上述p型離子之布植或n型離子之布植時，亦能以如下方式設定條件，即，使用於包含雜質原子之氣體(例如，BF3 等)中添加有氫之處理氣體，對上述非晶Si層離子布植氫。藉由在離子布植時亦將氫一併離子布植至非晶Si層，而非晶Si層之構造缺陷得以修復，載子之再結合之抑制效果提高，到達至部位(A)或部位(B)之電子或電洞之總量增加，因此，可謀求發電效率之提高。 作為對非晶Si層有效地布植氫之方法，可列舉非質量分離型離子布植之採用。與僅將n型離子、p型離子(例如，P離子、B離子)分離而布植之質量分離型離子布植不同，於非質量分離型離子布植時，使用PH3 、BH2 等包含氫之氣體作為包含雜質原子之氣體。藉此，於非質量分離型離子布植時，即便不如上述般使用添加有氫之處理氣體，亦能夠對基板與n型離子、p型離子同時地亦布植氫。進而，於非質量分離型離子布植時，無需將離子分離之機構，因此，亦有於裝置構造中佔據面積變小之優點。 藉由如此般向處理氣體中添加氫或者選擇非質量分離型離子布植而與n型離子、p型離子同時布植至非晶Si層的氫係於非晶Si層之深度方向上具有濃度分佈。 圖13之離子布植裝置1200具備開口部之位置不同之4種遮罩M1、M2、M3、M4作為用以於上述第二步驟中之離子布植時形成上述部位A及上述部位B之遮罩。因此，離子布植裝置1200可藉由分別使用開口部之位置不同之4種遮罩，而對非晶Si層之區域自由地製作經離子布植而成之部位A103及部位B104。 尤其是，採用有如下構成，即，上述遮罩M1、M2之開口部之區域與上述遮罩M3、M4之開口部之區域不相互重疊，且以所期望之距離隔開。藉由該構成，可形成例如如圖4A、圖4B、圖9A、及圖9B所示般之梳齒電極對向而成之離子布植區域。 於該情形時，較佳為以如下方式配置，即，設置於上述遮罩M2之單一之開口部縱貫設置於上述遮罩M1之相互隔開地並排配置之複數個開口部。同樣地，較佳為以如下方式配置，即，設置於上述遮罩M4之單一之開口部縱貫設置於上述遮罩M3之相互隔開地並排配置之複數個開口部。 再者，於以上之說明中，對使用4片遮罩M1～M4進行離子布植之方法進行了詳細敍述，但本發明不一定限定於使用4片遮罩。例如，於可利用厚度較大之遮罩之情形時，可使用兼用作遮罩M1及遮罩M2之1片遮罩，一併製作如圖9B所示般之包含連結部703b及各梳齒部703f之n+ 部位(A)703。同樣地，可使用兼用作遮罩M3及遮罩M4之1片遮罩，一併製作如圖9B所示般之包含連結部704b及各梳齒部704f之p+ 部位(B)704。 因此，於使用兼用作遮罩M1及遮罩M2之1片遮罩、或兼用作遮罩M3及遮罩M4之1片遮罩之情形時，可於上述第二步驟中集中進行2個步驟。即，可將形成上述部位A之指狀部之步驟1及形成上述部位A之匯流排部之步驟2集中成一個步驟而進行。同樣地，可將形成上述部位B之指狀部之步驟3及形成上述部位B之匯流排部之步驟4集中成一個步驟而進行。 其次，經過第二步驟而進行之退火處理係使用例如圖14所示之退火處理裝置1300而進行。圖14所示之退火處理裝置1300採用立式加熱爐，以批次式於1個匣盒(cassette)內設置1片基板(藉由第二步驟進行n型及p型離子布植步驟後之基板)，能夠對複數片該匣盒同時進行熱處理。 圖14之退火處理裝置1300包含加熱室1310及前室1320，且加熱室1310之內部空間1312與前室1320之內部空間1322可藉由閘閥1317而遮斷。 於前室1320之內部空間1322，將呈多層重疊有複數片匣盒1301之匣盒支架(cassette rack)1303配置於匣盒基座(cassette base)1302上，上述匣盒1301係以成為基板之正面及背面露出之狀態之方式保持基板之外周部。 於將加熱室1310之內部空間1312開放至大氣壓環境之狀態下打開閘閥1317，並藉由未圖示之移動裝置使配置有匣盒支架1303之匣盒基座1302自前室1320之內部空間1322上升至加熱室1310之內部空間1312(朝上箭頭)。其後，將閘閥1317關閉，並使用排氣裝置(P)1314，將加熱室1310之內部空間1312設為減壓環境。再者，亦可不將加熱室1310之內部空間1312減壓，而於大氣壓環境下進行大氣壓退火。 於將加熱室1310之內部空間1312減壓之後，將退火氣體導入至加熱室1310之內部空間1312，並於經管理之環境下，藉由特定之溫度分佈進行退火處理。此處，導入至加熱室1310之內部空間1312之氣體係氧氣、氮氣、或者包含氧氣及氮氣之兩者之氣體。於將氮氣用作退火氣體之情形時，亦可於氮氣中添加氫氣而使用。藉由如此般於退火氣體中添加氫，能夠對在第二步驟中布植至i型a-Si層之氫因加熱而自基板脫離之情況進行彌補。作為一例，利用相對於氮氣添加有3%以下之氫之退火氣體。 於將基板溫度設為特定之溫度以下之後，停止上述氣體之導入，將加熱室1310之內部空間1312設為開口於大氣之狀態並將閘閥1317打開。其後，藉由未圖示之移動裝置使匣盒基座1302自加熱室1310之內部空間1312下降至前室1320之內部空間1322(朝下箭頭)。 藉由以上之次序，進行本發明之實施形態之退火處理。此時，退火處理之條件係決定為與基板內部之n型離子及p型離子之擴散係數對應之最佳條件。例如，退火處理之溫度理想的是600℃以下。此係為了防止包含n+ 部位(A)103及p+ 部位(B)104之i型a-Si層102結晶化而導致i型a-Si層之作為鈍化膜之功能下降。進而，退火處理之溫度更理想的是400℃以下。此係為了抑制於離子布植時與n型離子、p型離子同時布植之氫自i型a-Si層脫離。又，退火處理所花費之時間理想的是30分鐘～60分鐘左右。 其次，作為電極形成步驟，以覆蓋包含n+ 部位(A)103及p+ 部位(B)104之i型a-Si層之外表面102b之整個區域之方式，形成金屬膜(例如，Cu膜)。金屬膜係藉由實施所期望之圖案化處理而被用作電極。作為金屬膜，除Cu膜以外，亦可較佳地使用Ag膜等。但是，電極並不限定於金屬膜，亦可代替金屬膜而使用透明導電膜。 形成上述金屬膜時，例如使用圖15所示之往復(inter-back)式濺鍍裝置1400。 於圖15所示之濺鍍裝置1400中，基板1458(相當於形成有部位(A)103及部位(B)104之基板101)可藉由未圖示之搬送裝置而於裝入取出室(L/UL)1451之內部、加熱室(H)1452之內部、及成膜室(S1)1453之內部移動。 於上述各室1451、1452、1453，個別地配置有用以使其內部空間能夠減壓之排氣裝置1451P、1452P、1453P。 首先，將基板1458自製造裝置之外部(大氣環境)導入至已設為大氣壓之裝入取出室1451。其後，將裝入取出室1451使用排氣裝置1451P而減壓(減壓環境)。繼而，將基板1458自經減壓之裝入取出室1451搬送至加熱室1452，並藉由加熱裝置1459實施所期望之熱處理。 其次，將熱處理後之基板1458自加熱室1452搬送至成膜室1453，並使其通過包含Cu之靶1462之前方，藉此，於基板1458上形成Cu膜。此時，藉由溫度調整裝置1461，而基板1458之溫度成為所期望之溫度。 於成膜室1453，靶1462載置於背襯板1463。於進行濺鍍時自氣體供給源1465將所期望之處理氣體導入至成膜室1453之內部，並且自電源1464將所期望之電力供給至背襯板1463。 然後，將形成有Cu膜之基板1458自成膜室1453搬送至裝入取出室1451，並自製造裝置取出至外部(大氣環境)。 繼而，藉由實施所期望之圖案化處理，而獲得以分別覆蓋n+ 部位(A)103及p+ 部位(B)104之方式局部存在之電極。 以上，作為電極形成步驟，對使用濺鍍裝置之金屬膜之成膜進行了說明，但亦可利用印刷法一面進行圖案化一面形成電極。 圖10A係表示先前例之太陽電池之製造步驟(圖16A～圖16J)之流程圖。圖10B係表示本發明之實施形態之太陽電池之製造步驟(圖2A～圖2G)之流程圖。先前例與本發明之實施形態係於以下詳細敍述之「α(a)」及「α(b)」方面不同。 如圖10A所示，先前之HBC型結晶系太陽電池中之部位(A)及部位(B)係經過圖16A～圖16J之步驟流程(圖10A所示之α(a))而首先形成。即，藉由依序進行包含「i型a-Si成膜，n型a-Si成膜，抗蝕劑塗佈、圖案化，蝕刻，抗蝕劑剝離，蝕刻終止層成膜、圖案化，i型a-Si成膜，p型a-Si成膜，抗蝕劑塗佈、圖案化，蝕刻，抗蝕劑剝離，蝕刻終止層剝離，僅於間隔部成膜i型a-Si」之13個處理步驟而製造。 相對於此，如圖10B所示般，本發明之實施形態之HBC型結晶系太陽電池中之部位(A)及部位(B)係藉由圖2B～圖2F之步驟流程(圖10B所示之α(b))而形成，必需之處理步驟之數量僅為6個。 另一方面，根據本發明之實施形態之製造方法，可藉由與先前之製造方法相比極少之步驟數而製作HBC型結晶系太陽電池。尤其是，根據圖10A所示之製造方法中之α(a)與圖10B所示之製造方法中之α(b)之比較可明確，本發明之實施形態之HBC型結晶系太陽電池無需先前之步驟中之「高價之光微影步驟或蝕刻步驟」。因此，根據圖10B所示之本發明之實施形態，可削減先前所必需之複雜之步驟，故而能夠於更穩定之步驟管理下進行製造。即，根據本發明之實施形態，無需高價之製造裝置，因此，本發明有助於提供廉價之HBC型結晶系太陽電池。 如圖10A及圖10B所示，後段之各處理步驟(電極膜形成、圖案化(光微影)、絕緣膜形成)係於先前之步驟(β(a))與本發明之實施形態之步驟(β(b))中無較大之差異。然而，會受退火之影響之「n+ 部位(A)103」及「p+ 部位(B)104」係於本發明之實施形態中存在於「i型a-Si層102」之內部。因此，必須考慮退火條件。 具體而言，退火處理時之溫度如上文所敍述般，為了防止i型a-Si層之作為鈍化膜之功能下降，而較佳為600℃以下，進而，為了抑制氫自i型a-Si層脫離，而較佳為400℃以下。 對本發明之較佳之實施形態進行說明，應理解為雖於上述內容中進行了說明，但該等係本發明之例示性者，不應考慮為限定者。只要不脫離本發明之範圍則可進行追加、省略、替換、及其他變更。因此，本發明不應視為由上述說明限定，而由申請專利範圍限制。 [產業上之可利用性] 本發明可廣泛應用於HBC型結晶系太陽電池之製造方法。此種HBC型結晶系太陽電池之製造方法可較佳地用作例如可提高每單位面積之發電效率並且於運轉狀況下要求輕量化的太陽電池之製造方法。Hereinafter, an embodiment of a method for producing an HBC-type crystal solar cell according to an embodiment of the present invention will be described based on the drawings. Fig. 1 is a view for explaining the configuration of an HBC type crystal solar cell 100G (100) according to an embodiment of the present invention. In the present embodiment, a method of manufacturing the HBC type crystal solar cell shown in Fig. 1 will be described in detail with reference to Figs. 2A to 2G. In the HBC type crystal solar cell 100G (100) according to the embodiment of the present invention, the following "n + site and p + site" are used to cover the back surface of the substrate (the opposite side of the light incident surface: in Fig. 1 The lower surface is formed in the form of an ion implantation method in the vicinity of the back surface of the inside of the i-type amorphous Si layer (a region close to the back surface). Further, in the present embodiment, a non-mass separation type ion implantation method (plasma doping method) is used to form an n + site and a p + site, but the present invention is not limited to this method. The method of introducing the impurity atoms into the amorphous Si layer in the state of ions is not limited to the non-mass separation type ion implantation method, and the impurities can be removed by the mass separation type ion implantation method or the like. Introduced to the amorphous Si layer. In the following description, a representative example of the impurity introduction method will be described in detail using a non-mass separation type ion implantation method, and for the sake of simplicity, the non-mass separation type ion implantation is expressed as "ion implantation". The HBC-type crystalline solar cell 100G according to the embodiment of the present invention includes a substrate 101 having a first surface 101a on which light is incident (arrow shown in FIG. 1) and a side opposite to the first surface 101a. The two faces 101b (non-light-receiving faces) and the crystal system of the first conductivity type (for example, an n-type semiconductor) exhibiting a photoelectric conversion function. Further, the HBC-type crystal solar cell 100G includes an i-type amorphous Si layer 102, and the i-type amorphous Si layer 102 is disposed so as to cover the second surface 101b of the substrate 101. Further, in the HBC-type crystal solar cell 100G, the first conductive type is disposed so as to be spaced apart from each other so as to be partially formed on the outer surface side of the amorphous Si layer 102 and exposed on the outer surface side of the amorphous Si layer 102. A portion (A) 103 of a conductive type (for example, n + type) and a portion (B) 104 of a conductive type different from the first conductive type. In Fig. 1, a portion (C) indicates a space between the portion (A) 103 and the portion (B) 104. The portion (A) 103 corresponds to the first portion (site A) of the present invention. The portion (B) 104 corresponds to the second portion (site B) of the present invention. In other words, the HBC-type crystal solar cell 100G according to the embodiment of the present invention indicates that the portion (A) 103 and the portion (B) 104 are localized regions formed by implanting desired elements on the surface layer portion of the substrate 101. In FIG. 1, the symbol d1 indicates the thickness of the amorphous Si layer 102, and the symbol d2 indicates the depth of the portion (A) 103 and the portion (B) 104. An example of the thickness d1 of the amorphous Si layer 102 is about 20 nm. The portion (A) 103 and the portion (B) 104 are formed by ion implantation using the mask described below. According to this method, the portion (A) 103 and the portion (B) 104 can be formed by performing ion implantation processing for separately forming the portion (A) 103 and the portion (B) 104 on the amorphous Si layer 102. 2A to 2G are schematic cross-sectional views showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Hereinafter, "amorphous Si" will be abbreviated as "a-Si". Each step of manufacturing the HBC type crystal solar cell 100G according to the embodiment of the present invention will be described in detail with reference to FIGS. 2A to 4B. First, the substrate 101 containing the crystal system is subjected to, for example, a wet etching treatment using potassium hydroxide (KOH) or sodium hydroxide (NaOH) as an etchant. Then, the organic matter and metal contaminants remaining on the treated substrate 101 are removed using nitric acid. Thereby, as shown in FIG. 2A, the first surface 101a (main surface) is processed so as to have a shape of a structure (pretreatment step). The second surface 101b having the substrate 101 processed into the first surface 101a having the shape of the structure is formed into a film i-type a by a CVD (Chemical Vapor Deposition) method under specific conditions. Si layer 102 (first step: Figure 2B). In the second step below, the desired ions are implanted on the surface 102b of the i-type a-Si layer 102 using the specific masks M1 to M4 individually. In FIGS. 2C to 2F, the arrows shown below the masks M1 to M4 indicate the direction in which the ions are implanted. As shown in FIG. 2C, in the vicinity of the outer surface 102b of the i-type a-Si layer 102 (portion close to the outer surface 102b), a mask M1 (first mask, FIG. 3A) is disposed. Then, n-type ions such as phosphorus (P) ions are locally implanted on the outer surface 102b of the i-type a-Si layer 102 by being provided in the opening portion S1 of the mask M1. Thereby, the comb tooth portion 103f (FIG. 4A) in the n + portion (A) 103 (the second step using the mask M1) is formed. As shown in FIG. 2D, a mask M2 (second mask, FIG. 3B) is disposed in the vicinity of the outer surface 102b of the i-type a-Si layer 102 instead of the mask M1. Then, n-type ions such as phosphorus (P) ions are locally implanted on the outer surface 102b of the i-type a-Si layer 102 by the opening S2 provided in the mask M2. Thereby, the joint portion 103b in the n + portion (A) 103 is formed (the second step of using the mask M2). As a result, the n + portion (A) 103 electrically connected to each other by the joint portion 103b is obtained. As shown in FIG. 2E, a mask M3 (third mask, FIG. 3C) is disposed in the vicinity of the outer surface 102b of the i-type a-Si layer 102 instead of the mask M2. Then, by providing the opening portion in the mask M3 S3, the comb-tooth portions of the n + portion (A) 103 parts of the n + not (A) 103 partially overlap the position of implanting boron (B) to each other 103f P-type ions such as ions. Thereby, the comb tooth portion 104f (Fig. 4B) in the p + portion (B) 104 is formed (the second step of using the mask M3). As shown in FIG. 2F, a mask M4 (fourth mask, FIG. 3D) is disposed in the vicinity of the outer surface 102b of the i-type a-Si layer 102 instead of the mask M3. Then, p-type ions such as boron (B) ions are locally implanted on the outer surface 102b of the i-type a-Si layer 102 by the opening portion S4 provided in the mask M4. Thereby, the joint portion 104b in the p + portion (B) 104 is formed (the second step of using the mask M4). As a result, the p + portion (B) 104 electrically connected to each other by the joint portion 104b is obtained. By using the second step of the masks M1 to M4, the HBC type crystal solar cell 100G is formed, and the HBC type crystal solar cell 100G is built in the i-type a-Si layer 102 and is in the a-Si layer. A portion (A) 103 of a conductivity type (for example, n + type) having the same conductivity as the first conductivity type of the substrate 101 and a conductive portion different from the first conductivity type are disposed so as to be spaced apart from each other on the outer surface side of the substrate 102. The part (B) 104 of the type is formed (Fig. 2G). Here, the portion (C) indicates a space portion between the portion (A) and the portion (B) which is located in the i-type a-Si layer 102. Further, in the method for producing an HBC-type crystal solar cell according to the embodiment of the present invention, the i-type amorphous Si layer provided so as to cover one surface of the substrate on the non-light-receiving surface side is used by using the ion of the mask In the implantation method, a portion A having the same conductivity type as that of the substrate 101 and a portion B having a different conductivity type from the substrate 101 are formed at positions spaced apart from each other, and then an annealing treatment (third step) is performed. Thereby, the ion-implanted portion A103 and the portion B104 can be freely formed on the region of the amorphous Si layer by using a mask having a different shape of the opening. The portion A and the portion B are both built in the amorphous Si layer 102, and the concentration distribution or the distribution of the amorphous Si layer in the depth direction can be freely controlled for the portion A and the portion B by changing the ion implantation conditions. . According to the ion implantation method using the mask, the regions of the portion A and the portion B can be three-dimensionally formed inside the amorphous Si layer 102. Further, the surface 102b of the amorphous Si layer 102 after the ions are implanted to the amorphous Si layer 102 maintains a flat surface distribution before the formation of the portion A and the portion B. Therefore, the electrode film or the reflective film formed in the subsequent step is also kept flat, and it is possible to perform patterning (photolithography) processing in order to leave the electrode film so as to overlap each of the portion A and the portion B. Stabilized. Further, a configuration in which an anti-reflection layer (AR layer) (not shown) is disposed on the first surface 101a of the substrate 101 may be used. As the antireflection layer (not shown), for example, an insulating nitride film, a tantalum nitride film, a titanium oxide film, an aluminum oxide film, or the like can be preferably used. 5 to 8 are schematic plan views showing another example of the masks M1 to M4 included in the manufacturing apparatus according to the embodiment of the present invention. 9A and 9B are schematic plan views showing an example of an ion implanting portion formed using the masks shown in Figs. 5 to 8 . 3A to 3D show an example of a configuration in which the arrangement of the openings is an experimental level. On the other hand, FIG. 5 to FIG. 8 are configuration examples in which the arrangement of the openings is a practical level (to fully utilize the entire area of the substrate). The numbers shown in the respective drawings of Figs. 5 to 8 are dimensions in mm. In the mask M1 (Fig. 5), seven openings 103 having a width of 0.3 mm are arranged side by side at intervals of 0.7 mm. In order to form the comb-tooth portion 103f in the n + portion (A) 103 in Fig. 1, for the same purpose as the mask M1 shown in Fig. 3A, the mask M1 shown in Fig. 5 is also used. That is, as shown in FIG. 9A and FIG. 9B, the positions of the front ends of the respective comb-tooth portions 703f formed by the mask M1 shown in FIG. 5 are configured to be straight lines (lower two-point chain lines). Further, the rear end position of each of the comb-tooth portions 703f is configured to overlap the position (the upper two-point chain line) of the connecting portion 703b along the edge of the substrate which is produced by using the mask M2 shown in FIG. In the mask M2 (FIG. 6), the opening portion S2 having a width of 2 mm is disposed at a position 0.5 mm from the edge of the substrate toward the inside, and the connecting portion 103b in the n + portion (A) 103 in FIG. 1 is formed. For the same purpose as the mask M2 shown in FIG. 3B, the mask M2 shown in FIG. 6 is also used. That is, as shown in FIG. 9A and FIG. 9B, the connecting portion 703b produced by the mask M2 shown in FIG. 6 is disposed along the edge of the substrate and overlaps with the rear end positions of the respective comb-tooth portions 703f. . Thereby, each comb-tooth portion 703f and the connecting portion 703b constituting the n + portion (A) 703 function as regions electrically connected. In the mask M3 (Fig. 7), six slit portions S3 having a width of 0.5 mm are arranged side by side at intervals of 0.5 mm. In order to form the comb-tooth portion 104f in the p + portion (B) 104 in Fig. 1, for the same purpose as the mask M3 shown in Fig. 3C, the mask M3 shown in Fig. 7 is also used. The opening S3 of the mask M3 (Fig. 7) falls within the distance between the mask M1 (Fig. 5), and the opening S3 of the mask M3 (Fig. 7) and the opening S1 of the mask M1 (Fig. 5) form mutual The way of separating the positions. That is, within 0.5 mm of the mask M1 (Fig. 5), the opening portion S3 of the mask M3 (Fig. 7) of 0.5 mm is disposed, and within 0.5 mm of the mask M3 (Fig. 7), The opening S1 of the 0.3 mm of the mask M1 (Fig. 5) is arranged. That is, as shown in FIG. 9A and FIG. 9B, the position of the front end of each of the comb-tooth portions 704f produced by the mask M3 shown in FIG. 7 is configured to be a straight line (the upper two-point chain line). Further, the positions of the rear end portions of the respective comb-toothed portions 704f are overlapped with the position (lower two-point chain line) of the connecting portion 703b along the edge of the substrate which is produced by using the mask M2 shown in FIG. Composition. In the mask M4 (Fig. 8), an opening S2 having a width of 2 mm is disposed at a position 0.5 mm from the edge of the substrate toward the inside, and the connecting portion 104b in the p + portion (B) 104 in Fig. 1 is formed. For the same purpose as the mask M4 shown in FIG. 3D, the mask M4 shown in FIG. 8 is also used. That is, as shown in FIG. 9A and FIG. 9B, the connecting portion 703b produced by the mask M4 shown in FIG. 8 is disposed so as to be disposed along the edge of the substrate and overlap the rear end position of each of the comb-tooth portions 704f. . Thereby, each of the comb-tooth portions 703f and the connecting portion 703b constituting the p + portion (B) 704 functions as an electrically connected region. Further, in FIGS. 5, 7, 9A, and 9B, each of the comb-tooth portions 703f and 704f and the seven opening portions S1 and the six opening portions S3 corresponding to the comb-tooth portion are illustrated. In the drawings, in order to easily understand the arrangement state of each comb-tooth portion and the state in which the comb-tooth portions are separated from each other, the opening width and the interval described above are actually used. It is disposed without a gap so as to fully utilize the entire area of the substrate. The HBC-type crystal solar cells 100 and 200 are also formed by using the second step of the masks M1 to M4 shown in Figs. 5 to 8 described above. The HBC-type crystal solar cells 100 and 200 are built in the i-type. The a-Si layer 102 is disposed at a portion on the outer surface side of the a-Si layer 102 so as to be spaced apart from each other by a conductive type (for example, n + type) portion of the first conductivity type of the substrate 101 (A) And a portion (B) 104 of a conductivity type different from the first conductivity type (Fig. 1). Here, the portion (C) indicates a space portion between the portion (A) and the portion (B) which is located in the i-type a-Si layer 102. Hereinafter, the conditions of ion implantation used in the method for producing an HBC-type crystal solar cell according to an embodiment of the present invention will be described. As described above, in the embodiment of the present invention, the ion-implanted portion A103 and the portion B104 can be freely formed on the region of the amorphous Si layer by using the mask having different shapes of the openings. Both the portion A and the portion B are built in the amorphous Si layer 102, and the concentration distribution or the patch distribution in the depth direction can be individually controlled for the portion A and the portion B by changing the ion implantation conditions. Here, as shown in FIG. 2B, the i-type a-Si layer 102 is formed as a single film in the thickness direction and the in-plane direction from the beginning. Therefore, the n + site (A) 103 and the p + site (B) 104 are formed in the vicinity of the outer surface 102b of the i-type a-Si layer 102 even by the second step performed after the first step. In the case, the portion (C) which is the spacer, that is, the region where the ion implantation is not performed, is also present in the i-type a-Si layer 102 as a single film in the thickness direction. Further, by way of the i-type a-Si film of a single layer of 102 does not reach to the second surface 101b of the substrate 101 is formed of n + portion (A) 103 and the p + portion (B) 104 and in contact with The i-type a-Si layer 102 existing on the second surface 101b of the substrate 101 exists as a single film continuous in the in-plane direction of the substrate 101. Thus, the i-type a-Si layer 102 shown in FIG. 2G exists in the form of a "single film" in the regions other than the n + site (A) 103 and the p + site (B) 104 (here, the so-called "single" The film means that there is no interface inside the i-type a-Si layer 102, whereby the function of the i-type a-Si layer 102 as a passivation film is maintained. On the other hand, in the prior configuration shown in FIG. 16J, in order to form the n-type a-Si layer 1003 and the p-type a-Si layer 1007, the i-type formed between the layers 1003, 1007 and the substrate 1001 is formed. The a-Si layer 1002 temporarily forms a spacer (state shown in FIGS. 16C and 16G) in the direction of the surface of the substrate by etching. Finally, as shown in FIG. 16J, a structure in which the i-type a-Si layer 1009 is formed in the spacer portion and the spacer portion is buried is obtained. Therefore, in the i-type a-Si layer shown in Fig. 16J, there is an interface in the in-plane direction of the substrate (the dotted line between the symbol 1002 and the symbol 1009 shown in Fig. 16J corresponds to the interface). Therefore, the presence of the interface causes the film to become discontinuous in the in-plane direction of the substrate, and the i-type a-Si layer cannot function effectively as a passivation film. Fig. 11 is a graph showing the relationship between the ion energy (Ion Energy) of boron (B) and the stop range (Stopping Range). The stop distance is an indication of where the implanted ions can enter the film in the depth direction of the film. According to the graph, it is understood that the ion energy and the stopping distance are in a proportional relationship in which the depth at which the ions are implanted increases as the ion energy increases. Therefore, the position at which the i-type a-Si layer 102 is ion-implanted with boron (B) at a specific depth can be changed by selecting a specific ion energy. By using this relationship, the p + site (B) 104 shown in Fig. 1 can be formed with good reproducibility. If an example is shown, the p + site (B) 104 having a depth of about 15 nm can be obtained by selecting 3 keV as the ion energy. In this case, if the thickness d1 of the i-type a-Si layer 102 shown in FIG. 1 is set to 20 nm, the thickness of the ion non-implanting portion which is not implanted with boron (B) ions remains as shown in FIG. The value shown by (d1-d2). The portion having the thickness of the d1-d2 is present in the i-type a-Si layer 102 in the form of a single film throughout the in-plane direction of the substrate 101. The ion energy at the time of ion implantation is as necessary as the passivation film according to the thickness d1 of the i-type a-Si layer 102 forming the n + site (A) 103 and the p + site (B) 104 as in the above example. The thickness (d1-d2) of the partial portion of the a-Si layer 102 and the thickness d2 necessary for the n + site (A) 103 and the p + site (B) 104 are selected to be appropriate values. However, if the ion energy is increased, there is a problem in that the surface of the i-type a-Si layer 102 to be treated becomes rough, and flatness cannot be maintained. Therefore, in the case of processing the i-type a-Si layer 102, the ion energy (keV) is preferably 20 or less, and further, the film thickness of the i-type a-Si layer 102 is considered (that is, i-type a) The relationship between the thickness of the -Si layer and the thickness which is desired to remain as a passivation film is preferably 5 or less. When the ion energy (keV) is 5 or less, the treatment with lower energy is performed, and therefore, the flatness of the surface of the i-type a-Si layer 102 can be maintained. Further, regarding phosphorus (P), it was confirmed that the relationship between the ion energy of the above boron (B) and the stopping distance was established. Therefore, by using this relationship, the n + site (A) 103 shown in Fig. 1 can be formed with good reproducibility. Further, regarding phosphorus (P), conditions such as the film thickness of the i-type a-Si layer 102 for forming the n + site (A) 103 and the flatness of the surface of the i-type a-Si layer 102 are ensured. In the same manner as in the case of boron (B), the same effect as in the case of boron (B) can be obtained by selecting 20 or less and further 5 or less as the ion energy (keV). Fig. 12 is a graph showing the distribution of phosphorus (P) concentration observed in the depth direction of the substrate by changing the ion energy of phosphorus (P). According to the graph, it was confirmed that when the ion energy (keV) at the time of ion implantation was changed to 3, 6, or 15, the phosphorus concentration (atoms/cm 3 ) became a substrate of 10 +18 . The position (nm) in the depth direction is approximately 30 (nm), 43 (nm), and 78 (nm). Thereby, the n + site (A) 103 can be formed in the depth direction in the substrate so that each of the depths becomes a specific phosphorus concentration. Regarding boron (B), it was also confirmed that the relationship of the distribution of the phosphorus (P) concentration observed in the depth direction of the above-mentioned phosphorus (P) in the substrate was established. Therefore, by using this relationship, the p + site (B) 104 shown in FIG. 1 can be formed in the depth direction in the substrate so as to have a specific boron concentration. The ion implantation in the second step described above is performed using, for example, the ion implantation apparatus 1200 shown in FIG. Figure 13 is a cross-sectional view showing an ion implantation apparatus 1200 used in an n-type ion implantation step and a p-type ion implantation step (second step) in an embodiment of the present invention. The ion implantation apparatus 1200 includes a vacuum chamber 1201 and a plasma generating unit that uses an ICP (Inductively Coupled Plasma) using a permanent magnet 1205, an RF (Radio Frequency) input coil 1206, and an RF introduction window (quartz) 1212. Coupling plasma) discharge; and vacuum exhaust (not shown). The inside of the vacuum chamber 1201 is separated into a plasma generating chamber and a plasma processing chamber by electrodes 1208 and 1209 having a plurality of openings. A substrate support table 1204 is disposed in the plasma processing chamber, and the substrate support table 1204 supports the substrate 1203 as a target object (corresponding to the substrate 101 after the tissue formation step). Further, the potential of the electrode 1208 is set to a floating potential, and the electrode 1208 has a function of stabilizing the potential of the plasma 1207. Further, the electrode 1209 is applied with a negative potential and has a function of extracting positive ions from the plasma 1207. The inside of the vacuum chamber 1201 is depressurized, and a gas containing impurity atoms implanted on the substrate 1203 is introduced into the plasma generating chamber. Then, the plasma generating unit is used to excite the plasma 1207, whereby the impurity atoms can be ionized, and the p-type or n-type ions extracted via the electrodes 1208 and 1209 are implanted onto the substrate 1203. Here, the implantation amount of the p-type ions or the implantation amount of the n-type ions is based on the sheet resistance of the p + site (B) 104 after the annealing treatment described below, and the sheet resistance of the n + site (A) 103 and The relationship between the photoelectric conversion efficiency of the HBC-type crystal solar cell is determined as the optimum value for producing the HBC-type crystal solar cell 100. The concentration of the n-type ions in the n + site (A) 103 is set to be at least higher than the concentration of the n-type ions in the substrate 101. Further, when the above-described p-type ion implantation or n-type ion implantation is performed on the substrate 1203, conditions can be set in such a manner that it is added to a gas containing impurity atoms (for example, BF 3 or the like). There is a hydrogen processing gas, and ions are implanted into the amorphous Si layer. By ion-implanting hydrogen into the amorphous Si layer during ion implantation, the structural defects of the amorphous Si layer are repaired, and the suppression effect of the recombination of the carrier is improved, reaching the site (A) or the site. The total amount of electrons or holes in (B) increases, so that power generation efficiency can be improved. As a method of efficiently implanting hydrogen into an amorphous Si layer, a non-mass separation type ion implantation can be cited. It is different from the mass separation type ion implantation in which only n-type ions and p-type ions (for example, P ions and B ions) are separated, and is used in non-mass separation type ion implantation, including PH 3 and BH 2 . A gas of hydrogen acts as a gas containing impurity atoms. Thereby, even when the non-mass separation type ion implantation is used, even if the treatment gas to which hydrogen is added is not used as described above, hydrogen can be simultaneously deposited on the substrate together with the n-type ions and the p-type ions. Further, in the case of non-mass separation type ion implantation, there is no need to separate the ions, and therefore, the area occupied by the device structure is small. Hydrogen which is simultaneously implanted with the n-type ion and the p-type ion to the amorphous Si layer by adding hydrogen to the processing gas or selecting non-mass-separated ion implantation is concentrated in the depth direction of the amorphous Si layer. distributed. The ion implantation apparatus 1200 of FIG. 13 includes four types of masks M1, M2, M3, and M4 having different positions of the openings as the masks for forming the portion A and the portion B during ion implantation in the second step. cover. Therefore, the ion implantation apparatus 1200 can freely fabricate the ion-implanted portion A103 and the portion B104 in the region of the amorphous Si layer by using four types of masks having different positions of the openings. In particular, a configuration is adopted in which the regions of the openings of the masks M1 and M2 and the regions of the openings of the masks M3 and M4 do not overlap each other and are separated by a desired distance. According to this configuration, for example, an ion implantation region in which the comb-shaped electrodes are opposed as shown in FIGS. 4A, 4B, 9A, and 9B can be formed. In this case, it is preferable that the single opening portion provided in the mask M2 is disposed in a plurality of openings that are arranged side by side in the mask M1 so as to be spaced apart from each other. Similarly, it is preferable that the single opening portion provided in the mask M4 is disposed in a plurality of openings that are arranged side by side in the mask M3 so as to be spaced apart from each other. Further, in the above description, the method of ion implantation using the four masks M1 to M4 has been described in detail, but the present invention is not necessarily limited to the use of four masks. For example, when a mask having a large thickness can be used, a mask which is also used as the mask M1 and the mask M2 can be used, and the joint portion 703b and the comb teeth as shown in FIG. 9B are collectively produced. n + part (A) 703 of part 703f. Similarly, a p + portion (B) 704 including a connecting portion 704b and each comb tooth portion 704f as shown in FIG. 9B can be produced by using one mask which is also used as the mask M3 and the mask M4. Therefore, when using one mask that also serves as the mask M1 and the mask M2, or a mask that also serves as the mask M3 and the mask M4, two steps can be concentrated in the second step. . That is, the step 1 of forming the finger portion of the portion A and the step 2 of forming the bus bar portion of the portion A can be collectively performed in one step. Similarly, the step 3 of forming the finger portion of the portion B and the step 4 of forming the bus bar portion of the portion B can be collectively performed in one step. Next, the annealing treatment performed in the second step is performed using, for example, the annealing treatment apparatus 1300 shown in FIG. The annealing treatment apparatus 1300 shown in FIG. 14 adopts a vertical heating furnace, and one substrate is placed in a cassette in a batch mode (after the n-type and p-type ion implantation steps are performed by the second step). The substrate) is capable of simultaneously performing heat treatment on a plurality of sheets of the cassette. The annealing processing apparatus 1300 of FIG. 14 includes a heating chamber 1310 and a front chamber 1320, and the internal space 1312 of the heating chamber 1310 and the internal space 1322 of the front chamber 1320 can be blocked by the gate valve 1317. In the internal space 1322 of the front chamber 1320, a cassette rack 1303 in which a plurality of cassettes 1301 are stacked in a plurality of layers is disposed on a cassette base 1302, and the cassette 1301 is used as a substrate. The outer peripheral portion of the substrate is held in such a manner that the front side and the back side are exposed. The gate valve 1317 is opened while the internal space 1312 of the heating chamber 1310 is opened to the atmospheric pressure environment, and the cassette base 1302 provided with the cassette holder 1303 is raised from the internal space 1322 of the front chamber 1320 by a moving device (not shown). To the internal space 1312 of the heating chamber 1310 (upward arrow). Thereafter, the gate valve 1317 is closed, and the exhaust space (P) 1314 is used to set the internal space 1312 of the heating chamber 1310 to a reduced pressure environment. Further, the internal space 1312 of the heating chamber 1310 may not be depressurized, and atmospheric pressure annealing may be performed under an atmospheric pressure environment. After the internal space 1312 of the heating chamber 1310 is depressurized, the annealing gas is introduced into the internal space 1312 of the heating chamber 1310, and is annealed by a specific temperature distribution in a managed environment. Here, the gas system introduced into the internal space 1312 of the heating chamber 1310 is oxygen, nitrogen, or a gas containing both oxygen and nitrogen. When nitrogen gas is used as the annealing gas, hydrogen gas may be added to nitrogen gas for use. By adding hydrogen to the annealing gas as described above, it is possible to compensate for the fact that the hydrogen implanted in the i-type a-Si layer in the second step is detached from the substrate by heating. As an example, an annealing gas having 3% or less of hydrogen added to nitrogen gas is used. After the substrate temperature is set to a specific temperature or lower, the introduction of the gas is stopped, and the internal space 1312 of the heating chamber 1310 is opened to the atmosphere and the gate valve 1317 is opened. Thereafter, the cassette base 1302 is lowered from the internal space 1312 of the heating chamber 1310 to the internal space 1322 of the front chamber 1320 (downward arrow) by a moving device (not shown). The annealing treatment of the embodiment of the present invention is carried out by the above procedure. At this time, the conditions of the annealing treatment are determined as the optimum conditions corresponding to the diffusion coefficients of the n-type ions and the p-type ions inside the substrate. For example, the temperature of the annealing treatment is desirably 600 ° C or less. This is to prevent the i-type a-Si layer 102 including the n + site (A) 103 and the p + site (B) 104 from being crystallized, resulting in a decrease in the function of the i-type a-Si layer as a passivation film. Further, the temperature of the annealing treatment is more preferably 400 ° C or lower. This is to suppress the hydrogen which is simultaneously implanted with n-type ions and p-type ions from the i-type a-Si layer during ion implantation. Further, the time required for the annealing treatment is preferably about 30 minutes to 60 minutes. Next, as an electrode forming step, a metal film (for example, a Cu film) is formed so as to cover the entire region of the outer surface 102b of the i-type a-Si layer including the n + site (A) 103 and the p + site (B) 104. ). The metal film is used as an electrode by performing a desired patterning process. As the metal film, in addition to the Cu film, an Ag film or the like can be preferably used. However, the electrode is not limited to the metal film, and a transparent conductive film may be used instead of the metal film. When the above metal film is formed, for example, an inter-back type sputtering apparatus 1400 shown in Fig. 15 is used. In the sputtering apparatus 1400 shown in FIG. 15, the substrate 1458 (corresponding to the substrate 101 on which the portion (A) 103 and the portion (B) 104 are formed) can be loaded into the take-out chamber by a transfer device (not shown) ( The inside of the L/UL) 1451, the inside of the heating chamber (H) 1452, and the inside of the film forming chamber (S1) 1453 are moved. Exhaust devices 1451P, 1452P, and 1453P for reducing the internal space thereof are disposed separately in each of the above-described chambers 1451, 1452, and 1453. First, the substrate 1458 is introduced from the outside of the manufacturing apparatus (atmospheric environment) to the loading and unloading chamber 1451 which has been set to atmospheric pressure. Thereafter, the loading and unloading chamber 1451 is depressurized (reduced pressure environment) using the exhaust device 1451P. Then, the substrate 1458 is transferred from the decompression loading and unloading chamber 1451 to the heating chamber 1452, and the desired heat treatment is performed by the heating device 1459. Next, the heat-treated substrate 1458 is transferred from the heating chamber 1452 to the film forming chamber 1453 and passed through the front surface of the target 1462 including Cu, whereby a Cu film is formed on the substrate 1458. At this time, the temperature of the substrate 1458 becomes a desired temperature by the temperature adjusting means 1461. In the film forming chamber 1453, the target 1462 is placed on the backing plate 1463. The desired process gas is introduced into the interior of the film forming chamber 1453 from the gas supply source 1465 at the time of sputtering, and the desired power is supplied from the power source 1464 to the backing plate 1463. Then, the substrate 1458 on which the Cu film is formed is transferred from the film forming chamber 1453 to the loading and unloading chamber 1451, and taken out from the manufacturing apparatus to the outside (atmospheric environment). Then, by performing the desired patterning process, electrodes partially present in such a manner as to cover the n + sites (A) 103 and the p + sites (B) 104, respectively, are obtained. As described above, the film formation using the metal film of the sputtering apparatus has been described as the electrode formation step. However, the electrode may be formed while being patterned by the printing method. Fig. 10A is a flow chart showing the manufacturing steps (Figs. 16A to 16J) of the solar battery of the prior art. Fig. 10B is a flow chart showing the manufacturing steps (Figs. 2A to 2G) of the solar cell according to the embodiment of the present invention. The prior art and the embodiment of the present invention are different in the aspects of "α(a)" and "α(b)" described in detail below. As shown in FIG. 10A, the portion (A) and the portion (B) in the conventional HBC type crystal solar cell are first formed by the step flow of FIG. 16A to FIG. 16J (α(a) shown in FIG. 10A). That is, by sequentially performing "i-type a-Si film formation, n-type a-Si film formation, resist coating, patterning, etching, resist stripping, etching termination layer film formation, patterning, i Type a-Si film formation, p-type a-Si film formation, resist coating, patterning, etching, resist stripping, etch stop layer peeling, film i-type a-Si only at the spacer portion 13 Manufactured by a number of processing steps. On the other hand, as shown in FIG. 10B, the portion (A) and the portion (B) in the HBC-type crystal solar cell according to the embodiment of the present invention are shown in FIG. 2B to FIG. Formed by α(b)), the number of necessary processing steps is only six. On the other hand, according to the manufacturing method of the embodiment of the present invention, an HBC type crystal solar cell can be produced by a very small number of steps compared with the prior art production method. In particular, according to the comparison between α(a) in the manufacturing method shown in FIG. 10A and α(b) in the manufacturing method shown in FIG. 10B, it is clear that the HBC type crystalline solar cell of the embodiment of the present invention does not need to be previously In the step of "high-priced light lithography step or etching step". Therefore, according to the embodiment of the present invention shown in Fig. 10B, the complicated steps required in the past can be reduced, so that the manufacturing can be performed under a more stable step management. That is, according to the embodiment of the present invention, since it is not necessary to manufacture a high-priced manufacturing apparatus, the present invention contributes to providing an inexpensive HBC type crystal solar cell. As shown in FIGS. 10A and 10B, the respective processing steps (electrode film formation, patterning (photolithography), and insulating film formation) in the subsequent stage are the steps of the previous step (β(a)) and the embodiment of the present invention. There is no significant difference in (β(b)). However, "n + site (A) 103" and "p + site (B) 104" which are affected by the annealing are present in the "i-type a-Si layer 102" in the embodiment of the present invention. Therefore, the annealing conditions must be considered. Specifically, as described above, the temperature at the time of the annealing treatment is preferably 600 ° C or less in order to prevent the function of the i-type a-Si layer from being reduced as a passivation film, and further, to suppress hydrogen from the i-type a-Si. The layer is detached, and is preferably 400 ° C or less. The preferred embodiments of the present invention are to be construed as illustrative and not restrictive. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be considered as being limited by the foregoing description, but by the scope of the claims. [Industrial Applicability] The present invention can be widely applied to a method for producing an HBC type crystal solar cell. The method for producing such a HBC-type crystal solar cell can be preferably used, for example, as a method for producing a solar cell which can increase the power generation efficiency per unit area and is required to be lightweight in an operation state.
100‧‧‧HBC型結晶系太陽電池
100G‧‧‧HBC型結晶系太陽電池
101‧‧‧基板(包含第一導電型之結晶系矽之基板)
101a‧‧‧第1面
101b‧‧‧第2面
102‧‧‧非晶Si層
102b‧‧‧外表面(非晶Si層之外表面)
103‧‧‧部位(A)(第1部位、導電型與第一導電型相同之部位)
103b‧‧‧連結部
103f‧‧‧梳齒部
104‧‧‧部位(B)(第2部位、導電型與第一導電型不同之部位)
104b‧‧‧連結部
104f‧‧‧梳齒部
703‧‧‧n+
部位(A)
703b‧‧‧連結部
703f、704f‧‧‧梳齒部
704‧‧‧p+
部位(B)
704b‧‧‧連結部
1001‧‧‧矽(基板)
1002‧‧‧i型非晶Si層
1003‧‧‧n型非晶Si層
1004‧‧‧抗蝕劑
1005‧‧‧蝕刻終止層
1006‧‧‧i型非晶Si層
1007‧‧‧p型非晶Si層
1008‧‧‧抗蝕劑
1009‧‧‧i型非晶Si層
1200‧‧‧離子布植裝置
1201‧‧‧真空槽
1203‧‧‧基板
1204‧‧‧基板支持台
1205‧‧‧永久磁鐵
1206‧‧‧RF導入線圈
1207‧‧‧電漿
1208‧‧‧電極
1209‧‧‧電極
1212‧‧‧RF導入窗(石英)
1300‧‧‧退火處理裝置
1301‧‧‧匣盒
1302‧‧‧匣盒基座
1303‧‧‧匣盒支架
1310‧‧‧加熱室
1312‧‧‧內部空間
1314‧‧‧排氣裝置
1317‧‧‧閘閥
1320‧‧‧前室
1322‧‧‧內部空間
1400‧‧‧濺鍍裝置
1451‧‧‧裝入取出室
1451P‧‧‧排氣裝置
1452‧‧‧加熱室
1452P‧‧‧排氣裝置
1453‧‧‧成膜室
1453P‧‧‧排氣裝置
1458‧‧‧基板
1459‧‧‧加熱裝置
1461‧‧‧溫度調整裝置
1462‧‧‧靶
1463‧‧‧背襯板
1464‧‧‧電源
1465‧‧‧氣體供給源
d1‧‧‧非晶Si層102之厚度
d2‧‧‧部位(A)103及部位(B)104之深度
H‧‧‧加熱室
L/UL‧‧‧裝入取出室
M1‧‧‧遮罩
M2‧‧‧遮罩
M3‧‧‧遮罩
M4‧‧‧遮罩
P‧‧‧排氣裝置
S1‧‧‧成膜室
S1‧‧‧開口部
S2‧‧‧開口部
S3‧‧‧開口部
S4‧‧‧開口部
(A)‧‧‧導電型與第一導電型相同之部位
(B)‧‧‧導電型與第一導電型不同之部位
(C)‧‧‧作為間隔部之部位100‧‧‧HBC type crystal solar cell
100G‧‧‧HBC type crystal solar cell
101‧‧‧Substrate (substrate containing the first conductivity type crystal system)
101a‧‧‧1st
101b‧‧‧2nd
102‧‧‧Amorphous Si layer
102b‧‧‧ outer surface (outer surface of amorphous Si layer)
103‧‧‧Part (A) (The first part, the conductive type and the first conductive type are the same)
103b‧‧‧Connecting Department
103f‧‧‧ comb teeth
104‧‧‧Part (B) (The second part, the difference between the conductive type and the first conductivity type)
104b‧‧‧Connecting Department
104f‧‧‧ comb teeth
703‧‧‧n + parts (A)
703b‧‧‧Link Department
703f, 704f‧‧‧ comb teeth
704‧‧‧p + parts (B)
704b‧‧‧Link Department
1001‧‧‧矽 (substrate)
1002‧‧‧i type amorphous Si layer
1003‧‧‧n type amorphous Si layer
1004‧‧‧Resist
1005‧‧‧etch stop layer
1006‧‧‧i type amorphous Si layer
1007‧‧‧p type amorphous Si layer
1008‧‧‧Resist
1009‧‧‧i type amorphous Si layer
1200‧‧‧Ion implant device
1201‧‧‧vacuum tank
1203‧‧‧Substrate
1204‧‧‧Substrate support desk
1205‧‧‧ permanent magnet
1206‧‧‧RF induction coil
1207‧‧‧ Plasma
1208‧‧‧electrode
1209‧‧‧electrode
1212‧‧‧RF induction window (quartz)
1300‧‧‧ Annealing device
1301‧‧‧匣 box
1302‧‧‧匣 pedestal
1303‧‧‧匣Box bracket
1310‧‧‧heating room
1312‧‧‧Internal space
1314‧‧‧Exhaust device
1317‧‧‧ gate valve
1320‧‧‧ front room
1322‧‧‧Internal space
1400‧‧‧ Sputtering device
1451‧‧‧Loading and taking out room
1451P‧‧‧Exhaust device
1452‧‧‧heating room
1452P‧‧‧Exhaust device
1453‧‧‧filming room
1453P‧‧‧Exhaust device
1458‧‧‧Substrate
1459‧‧‧ heating device
1461‧‧‧temperature adjustment device
1462‧‧‧ target
1463‧‧‧Backing board
1464‧‧‧Power supply
1465‧‧‧ gas supply
D1‧‧‧ Thickness of amorphous Si layer 102
D2‧‧‧ Depth of part (A) 103 and part (B) 104
H‧‧‧heating room
L/UL‧‧‧ loading and unloading room
M1‧‧‧ mask
M2‧‧‧ mask
M3‧‧‧ mask
M4‧‧‧ mask
P‧‧‧Exhaust device
S1‧‧‧ Filming room
S1‧‧‧ openings
S2‧‧‧ openings
S3‧‧‧ openings
S4‧‧‧ openings
(A) ‧‧‧The same type of conductive type as the first conductive type
(B) ‧‧‧Different parts of the conductivity type and the first conductivity type
(C) ‧ ‧ as part of the spacer
圖1係表示本發明之實施形態之HBC型結晶系太陽電池之一實施形態的模式剖視圖。 圖2A係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2B係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2C係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2D係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2E係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2F係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖2G係表示製造圖1所示之HBC型結晶系太陽電池之次序之模式剖視圖。 圖3A係表示本發明之實施形態之製造裝置所具備之遮罩M1之一例的模式俯視圖。 圖3B係表示本發明之實施形態之製造裝置所具備之遮罩M2之一例的模式俯視圖。 圖3C係表示本發明之實施形態之製造裝置所具備之遮罩M3之一例的模式俯視圖。 圖3D係表示本發明之實施形態之製造裝置所具備之遮罩M4之一例的模式俯視圖。 圖4A係表示使用圖3A～圖3D所示之遮罩而形成之雜質導入部之一例的模式俯視圖。 圖4B係表示使用圖3A～圖3D所示之遮罩而形成之雜質導入部之一例的模式俯視圖。 圖5係表示本發明之實施形態之製造裝置所具備之遮罩M1之另一例的模式俯視圖。 圖6係表示本發明之實施形態之製造裝置所具備之遮罩M2之另一例的模式俯視圖。 圖7係表示本發明之實施形態之製造裝置所具備之遮罩M3之另一例的模式俯視圖。 圖8係表示本發明之實施形態之製造裝置所具備之遮罩M4之另一例的模式俯視圖。 圖9A係表示使用圖5～圖8所示之遮罩而形成之雜質導入部之一例的模式俯視圖。 圖9B係表示使用圖5～圖8所示之遮罩而形成之雜質導入部之一例的模式俯視圖。 圖10A係表示製造先前例之HBC型結晶系太陽電池之步驟之流程圖。 圖10B係表示製造本發明之實施形態之HBC型結晶系太陽電池之步驟的流程圖。 圖11係表示硼(B)之離子能量與停止距離之關係之曲線圖。 圖12係表示改變磷(P)之離子能量而於基板之深度方向觀測到之磷(P)濃度之分佈的曲線圖。 圖13係離子布植裝置之模式剖視圖。 圖14係退火處理裝置之模式剖視圖。 圖15係用於形成電極膜之成膜裝置之模式剖視圖。 圖16A係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16B係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16C係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16D係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16E係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16F係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16G係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16H係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16I係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。 圖16J係表示製造先前之HBC型結晶系太陽電池之次序之模式剖視圖。Fig. 1 is a schematic cross-sectional view showing an embodiment of an HBC-type crystal solar cell according to an embodiment of the present invention. Fig. 2A is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2B is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2C is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2D is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2E is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2F is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. Fig. 2G is a schematic cross-sectional view showing the procedure for manufacturing the HBC type crystal solar cell shown in Fig. 1. 3A is a schematic plan view showing an example of a mask M1 included in the manufacturing apparatus according to the embodiment of the present invention. 3B is a schematic plan view showing an example of a mask M2 included in the manufacturing apparatus according to the embodiment of the present invention. 3C is a schematic plan view showing an example of a mask M3 included in the manufacturing apparatus according to the embodiment of the present invention. 3D is a schematic plan view showing an example of a mask M4 provided in the manufacturing apparatus according to the embodiment of the present invention. 4A is a schematic plan view showing an example of an impurity introduction portion formed by using the mask shown in FIGS. 3A to 3D. 4B is a schematic plan view showing an example of an impurity introduction portion formed by using the mask shown in FIGS. 3A to 3D. Fig. 5 is a schematic plan view showing another example of the mask M1 included in the manufacturing apparatus according to the embodiment of the present invention. Fig. 6 is a schematic plan view showing another example of the mask M2 included in the manufacturing apparatus according to the embodiment of the present invention. Fig. 7 is a schematic plan view showing another example of the mask M3 included in the manufacturing apparatus according to the embodiment of the present invention. Fig. 8 is a schematic plan view showing another example of the mask M4 provided in the manufacturing apparatus according to the embodiment of the present invention. Fig. 9A is a schematic plan view showing an example of an impurity introduction portion formed by using the mask shown in Figs. 5 to 8 . Fig. 9B is a schematic plan view showing an example of an impurity introduction portion formed by using the mask shown in Figs. 5 to 8 . Fig. 10A is a flow chart showing the steps of manufacturing the HBC type crystalline solar cell of the prior art. Fig. 10B is a flow chart showing the steps of producing an HBC type crystal solar cell according to an embodiment of the present invention. Figure 11 is a graph showing the relationship between the ion energy of boron (B) and the stopping distance. Fig. 12 is a graph showing the distribution of phosphorus (P) concentration observed in the depth direction of the substrate by changing the ion energy of phosphorus (P). Figure 13 is a schematic cross-sectional view of an ion implantation apparatus. Figure 14 is a schematic cross-sectional view of an annealing treatment apparatus. Fig. 15 is a schematic cross-sectional view showing a film forming apparatus for forming an electrode film. Fig. 16A is a schematic cross-sectional view showing the order of manufacturing a conventional HBC type crystal solar cell. Fig. 16B is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell. Fig. 16C is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell. Fig. 16D is a schematic cross-sectional view showing the order of manufacturing a conventional HBC type crystal solar cell. Fig. 16E is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell. Fig. 16F is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell. Fig. 16G is a schematic cross-sectional view showing the order of manufacturing a conventional HBC type crystal solar cell. Fig. 16H is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell. Fig. 16I is a schematic cross-sectional view showing the order of manufacturing a conventional HBC type crystal solar cell. Fig. 16J is a schematic cross-sectional view showing the sequence of manufacturing a conventional HBC type crystal solar cell.
100‧‧‧HBC型結晶系太陽電池 100‧‧‧HBC type crystal solar cell
100G‧‧‧HBC型結晶系太陽電池 100G‧‧‧HBC type crystal solar cell
101‧‧‧基板(包含第一導電型之結晶系矽之基板) 101‧‧‧Substrate (substrate containing the first conductivity type crystal system)
101a‧‧‧第1面 101a‧‧‧1st
101b‧‧‧第2面 101b‧‧‧2nd
102‧‧‧非晶Si層 102‧‧‧Amorphous Si layer
102b‧‧‧外表面(非晶Si層之外表面) 102b‧‧‧ outer surface (outer surface of amorphous Si layer)
103‧‧‧部位(A)(第1部位、導電型與第一導電型相同之部位) 103‧‧‧Part (A) (The first part, the conductive type and the first conductive type are the same)
104‧‧‧部位(B)(第2部位、導電型與第一導電型不同之部位) 104‧‧‧Part (B) (The second part, the difference between the conductive type and the first conductivity type)
d1‧‧‧非晶Si層102之厚度 D1‧‧‧ Thickness of amorphous Si layer 102
d2‧‧‧部位(A)103及部位(B)104之深度 D2‧‧‧ Depth of part (A) 103 and part (B) 104
(A)‧‧‧導電型與第一導電型相同之部位 (A) ‧‧‧The same type of conductive type as the first conductive type
(B)‧‧‧導電型與第一導電型不同之部位 (B) ‧‧‧Different parts of the conductivity type and the first conductivity type
(C)‧‧‧作為間隔部之部位 (C) ‧ ‧ as part of the spacer
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015198028 | 2015-10-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201731119A true TW201731119A (en) | 2017-09-01 |
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|---|---|---|---|
| TW105132205A TW201731119A (en) | 2015-10-05 | 2016-10-05 | Method and apparatus of manufacturing HBC-crystalline solar cell |
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|---|---|
| CN (1) | CN108140684A (en) |
| TW (1) | TW201731119A (en) |
| WO (1) | WO2017061463A1 (en) |
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| US8202789B2 (en) * | 2008-09-10 | 2012-06-19 | Varian Semiconductor Equipment Associates, Inc. | Implanting a solar cell substrate using a mask |
| KR20120137361A (en) * | 2010-02-09 | 2012-12-20 | 인테벡, 인코포레이티드 | An adjustable shadow mask assembly for use in solar cell fabrications |
| KR20120090449A (en) * | 2011-02-08 | 2012-08-17 | 삼성전자주식회사 | Solar cell and method of manufacturing the same |
| US9412895B2 (en) * | 2012-04-04 | 2016-08-09 | Samsung Sdi Co., Ltd. | Method of manufacturing photoelectric device |
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2016
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| WO2017061463A1 (en) | 2017-04-13 |
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