TW201724290A - Sealed devices and methods for making the same - Google Patents

Abstract

Disclosed herein are sealed devices comprising at least one cavity containing at least one quantum dot or at least one laser diode are also disclosed herein. The sealed devices can comprise a glass substrate sealed to an inorganic substrate, optionally via a sealing layer, the seal extending around the at least one cavity. Display and optical devices comprising such sealed devices are also disclosed herein, as well as methods for making such sealed devices.

Description

Sealing device and method of manufacturing same

The present disclosure relates generally to sealing devices and, more particularly, to sealing devices including quantum dots, laser diodes, light emitting diodes, or other light emitting structures, and display and optical devices including such sealing devices.

Sealed glass packaging and packaging are becoming increasingly popular in electronic and other device applications, benefiting from a continuously operating sealed environment. Exemplary devices that benefit from a closed package include televisions, sensors, optical devices, organic light emitting diode (OLED) displays, 3D inkjet printers, laser printers, solid state lighting sources, and photovoltaic structures. For example, displays that include OLEDs or quantum dots (QDs) require a sealed and enclosed package to avoid possible decomposition of such materials under atmospheric conditions.

The glass, ceramic and/or glass-ceramic substrates can be sealed by placing the substrates in a furnace, with or without the use of epoxy or other sealing materials. However, the furnace is typically operated at higher processing temperatures that are not suitable for many devices, such as OLEDs and QDs. The glass substrate can also be sealed with a frit, for example, by placing a frit between the substrates and heating the frit with a laser or other heat source to seal the package. The frit-based sealant can include, for example, a glass material that is ground to a particle size in the range of from about 2 to 150 microns. The frit can be mixed with a negative CTE material having a similar particle size to reduce the mismatch in the coefficient of thermal expansion between the substrates and the frit.

Glass frits generally have a glass transition temperature ( _Tg ) above 450 °C and therefore require treatment at elevated temperatures to form a seal. This high temperature sealing process is detrimental to temperature sensitive workpieces. Further, the negative CTE inorganic filler within the frit paste negatively affects the transparency of the frit, which results in an opaque seal. Accordingly, it would be advantageous to provide a transparent and closed sealing device and a method for forming such a device at a lower temperature suitable for packaging a heat sensitive workpiece.

In various embodiments, the present disclosure relates to a sealing device comprising a glass substrate comprising a first surface; an inorganic substrate comprising a second surface; a sealing layer with at least a portion of the first surface and at least a portion of the a second surface contact; and at least one seal that bonds the glass substrate to the inorganic substrate through the sealing layer, wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK, wherein the first or second surface At least one of the at least one cavity includes at least one quantum dot and at least one LED element, and wherein the seal extends around the at least one cavity.

Also disclosed herein are sealing devices comprising laser diodes, the devices comprising a glass substrate comprising a first surface; an inorganic substrate comprising a second surface; a sealing layer with at least a portion of the first surface and at least a portion The second surface is in contact with; and at least one seal that bonds the glass substrate to the inorganic substrate through the sealing layer, wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK, wherein the first or the first At least one of the two surfaces includes at least one cavity including at least one laser diode, and wherein the seal extends around the at least one cavity.

Further disclosed herein is a sealing device comprising a glass substrate comprising a first surface, the doped inorganic substrate comprising a second surface; and at least one seal bonding the glass substrate to the doped inorganic substrate, wherein The doped inorganic substrate comprises a thermal conductivity greater than about 2.5 W/mK and at least about 0.05 wt% of at least one dopant selected from the group consisting of ZnO, SnO, SnO ₂ or TiO ₂ . In some embodiments, the glass substrate can be bonded to the inorganic substrate or bonded through a sealing layer.

Also disclosed herein are methods for making such a sealing device, the methods comprising: placing the at least one quantum dot and at least one LED element in at least one cavity on a first surface of a glass substrate or a second surface of an inorganic substrate Forming a sealing layer over at least a portion of the first surface or at least a portion of the second surface; contacting the first surface with the second surface with the sealing layer disposed therebetween to form a sealing interface; A laser beam operating at a predetermined wavelength is directed to the sealing interface to form a seal between the glass substrate and the inorganic substrate, the seal surrounding the at least one cavity including the at least one quantum dot and the at least one LED element Extending wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

Also disclosed herein are methods for fabricating a sealing device comprising a laser diode, the methods comprising: placing the at least one quantum dot and the at least one LED component in the at least one cavity on a first surface of the glass substrate or an inorganic substrate a second surface; placing a sealing layer over at least a portion of the first surface or at least a portion of the second surface; contacting the first surface with the second surface with the sealing layer disposed therebetween to form a sealing interface And directing a laser beam operating at a predetermined wavelength to the sealing interface to form a seal between the glass substrate and the inorganic substrate, the seal extending around the at least one cavity including the at least one laser diode, Wherein, the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

Additional methods disclosed herein include methods for fabricating a sealing device, the methods comprising: doping at least one dopant that absorbs at a predetermined wavelength in an inorganic substrate; and bonding the first surface of the glass substrate to the doped inorganic Contacting a second surface of the substrate to form a sealing interface; and directing a laser beam operating at a predetermined wavelength to the sealing interface to form a seal between the glass substrate and the inorganic substrate, wherein the inorganic substrate has a greater than A thermal conductivity of about 2.5 W/mK.

Further disclosed herein are methods for fabricating a sealing device, the method comprising: contacting a first surface of a glass substrate and a second surface of the inorganic substrate with a sealing layer to form a sealing interface; and a thunder that will operate at a predetermined wavelength Directing a beam of light to the sealing interface to form a seal between the glass substrate and the inorganic substrate; wherein a difference between a CTE of the glass substrate and a CTE of the inorganic substrate is less than 20×10 ^-7 /° C., and The inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

Additional features and advantages of the present disclosure will be set forth in the description which follows, and the <Desc/Clms Page number> Part of it.

The foregoing description of the preferred embodiments of the invention and the claims The description includes the drawings to provide a further understanding of the present disclosure, and which is incorporated in the specification and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description,

Disclosed herein are sealing devices comprising at least two substrates selected from the group consisting of glass, glass-ceramic and/or ceramic substrates. Exemplary sealing devices can include, for example, encapsulating quantum dots, LEDs, laser diodes (LDs), and other light emitting structures. Display and optical devices incorporating such sealing elements are also disclosed herein. A display such as a television, computer, handheld device, watch or the like can include a backlight containing a quantum dot (QD) as a color converter. Exemplary optical devices can include, but are not limited to, sensors, watches, biosensors, and other devices configured to include the embodiments described herein. In some embodiments, the QD can be packaged, for example, in a glass tube, capillary or plate such as a quantum dot enhancement film (QDEF) or a packaged device (eg, a chiplet). Such films or devices can be filled with quantum dots (e.g., green and red emitting quantum dots) and can be sealed at both ends and/or periphery. Due to the temperature sensitivity of the QD, backlights utilizing quantum dot materials avoid direct contact between the quantum dot material and the source (eg, LED). Thus the sealing device 101, as shown in FIG. 1, includes a plurality of QDs or the QD (comprising material 105) are often incorporated into the backlight stack as a separation element, for example, is placed close to the LED 103, but a sufficient distance to avoid damage or QD material 105 comprising QDs under extreme conditions (e.g., up to about the temperature to 140 ° C and up to about 100W / cm ² flux). For example, the sealing device 101 can be placed closer to comprise one or more cavities 109 of the first substrate 107, the cavity 109 includes LED 103. In some examples, however, such sealing devices can cause significant material waste and/or complicate production such as QDEF. Further, in the case of QDEF, the films also lack a good path to dissipate the heat generated by color conversion. In some embodiments, the sealing device 101 can include an upper substrate that is hermetically sealed to the lower substrate, both forming a housing comprising QDs or QDs, the QDs or QD comprising a material 105 . Thereafter, the package or chiplet can be sealed to the underlying first substrate 107 . Although not shown, this embodiment may be provided in the wall of the well formed in the first substrate 107, the substrate 107 comprises a first LED 103. In an additional embodiment, one or more lenses (not shown) may be disposed on one side of the chiplet or sealing device 101 opposite the LED 103 .

2-5 various reference now to FIG discussed embodiments of the present disclosure, which illustrates an exemplary sealing means. The following general description is intended to provide an overview of the claimed invention, and the various aspects of the invention are described in the context of the disclosure of the invention, and in the context of the disclosure, these embodiments are interchangeable. The "first" substrate, the "glass" substrate, or the "first glass" substrate will be used throughout, and these labels may be interchanged to indicate the same substrate. Similarly, a "second" substrate, an "inorganic" substrate, a "doped inorganic" substrate, or a "second inorganic" substrate will be used throughout, and these labels can be interchanged to indicate the same substrate. Device

Disclosed herein is a sealing device comprising a glass substrate comprising a first surface; an inorganic substrate comprising a second surface; a sealing layer in contact with at least a portion of the first surface and at least a portion of the second surface; and at least one a seal that bonds the glass substrate to the inorganic substrate through the sealing layer, wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK, wherein at least one of the first or second surface comprises at least one a cavity comprising at least one quantum dot and at least one LED element, and wherein the seal extends around the at least one cavity. Display and optical devices incorporating such sealing devices are also disclosed herein.

Of FIG. 2A-B illustrates a schematic cross-sectional view of two non-limiting embodiments of the sealing apparatus 200. The sealing device 200 includes a first glass substrate 201 and a second glass substrate 207 including at least one cavity 209 . The at least one cavity 209 can comprise at least one quantum dot 205 . The at least one cavity 209 can also comprise at least one LED element 203 . The first substrate 207 and second substrate 201 can be bonded 211 together to transmit at least one seal, the seal 211 can surround at least one cavity 209 extends. Alternatively, the seal can extend around more than one cavity, such as two or more cavities (not shown). In an additional embodiment, one or more lenses (not shown) may be disposed on one side of the first glass substrate 201 opposite the LEDs 203 . The LED 203 can have any diameter or length, such as from about 100 μm to about 1 mm, from about 200 μm to about 900 μm, from about 300 μm to about 800 μm, from about 400 μm to about 700 μm, from about 350 μm to about 400 μm, and any subrange therebetween. The LED 203 can also provide high or low flux, for example, for high throughput, the LED 203 can emit 20 W/cm ² or more. For low throughput, the LED 203 can emit less than 20 W/cm ² .

In the non-limiting embodiment illustrated in FIG . 2A , the at least one LED element 203 can be in direct contact with the at least one quantum dot 205 . The term "contact" as used herein is intended to indicate a direct physical contact or interaction between two listed elements, for example, the quantum dots and LED elements are capable of interacting physically within the cavity. . Non-limiting embodiment illustrated in the first embodiment in FIG. 2B, the at least one LED element 203 and the at least one quantum dot 205 may be present in the same cavity, for example 213 but separated from each other through a barrier or membrane separation. Via comparison within the quantum dot, a capillary or a separate sealing sheet, for example, as shown in FIG. QDEF first difficult to directly interact with the LED, and not disposed in the cavity with the LED.

In the non-limiting embodiment illustrated in FIG . 2C , the sealing device 200 can include at least one LED element 203 , a first substrate 201 , a second substrate 207, and a third substrate 215 . The first substrate 201 and the third substrate 2 15 may form a hermetic sealed package or device 216 that forms a closed and sealed region containing the at least one quantum dot 205 . In some embodiments, the hermetically sealed package or device 216 may also include one or more membranes 217a , b such as, but not limited to, a membrane used as a high pass filter and a membrane used as a low pass filter or provided for filtration A film of light of a predetermined wavelength. In some embodiments, the at least one LED element 203 can be separated from the at least one quantum dot 205 by a predetermined distance "d". In some embodiments, the predetermined distance can be less than or equal to about 100 [mu]m. In other embodiments, the predetermined distance is between about 50 [mu]m and about 2 mm, between about 75 [mu]m and about 500 [mu]m, between about 90 [mu]m and about 300 [mu]m, and all subranges therebetween. In some embodiments, the predetermined distance is measured from the upper surface of the LED element 203 to the midline of the enclosed and sealed region containing the at least one quantum dot 205 . Of course, any portion of the enclosed and sealed region including the at least one quantum dot 205 , such as, but not limited to, the upper surface of the third substrate 215 facing the at least one quantum dot 205 , toward the at least one quantum The lower surface of the first substrate 210 of the point 205 or the surface formed by any of the films or filters 217a , b that may be present in the hermetically sealed package or device 216 measures the predetermined distance. In some embodiments, the exemplary film includes avoiding blue light from the exemplary LED element 203 from escaping the filter 217a of the device 216 in one direction and/or avoiding red light (or another from the emitted quantum dot material emission) A light) escapes another filter 217b of the device 216 along the second direction. For example, in some embodiments, the device 200 can include one or more LED elements 203 contained within a well or other housing formed through the second substrate 207 and/or other substrate. A hermetically sealed package or device 216 proximate the one or more LED elements (eg, a predetermined distance as described above) can be secured to or sealed to the second substrate 207 and can include a hermetic seal to form a single wavelength quantum dot a first substrate 201 of a third substrate 215 of a sealed region of material 205 , the single wavelength quantum dot material 205 configured to emit at an infrared wavelength, near infrared wavelength when excited by light emitted by the one or more LED elements 203 Or light under a predetermined spectrum (red light). The quantum dot material 205 is spaced apart from the LED element 203 by a predetermined distance. In such an exemplary embodiment, the first filter 217a may be disposed on a bottom (or upper) surface of the first substrate 201 to filter blue light emitted from an upper surface of the device 200 , and the second filter 207b The upper (or bottom) surface of the third substrate may be disposed to filter the excited light from the quantum dot material that excites the bottom surface of the third substrate 215 . In an additional embodiment, the filter 217c can be disposed on the bottom surface of the second substrate 215 to filter blue light. In some embodiments, the filters 217a , 217b , 217c, alone or in combination, comprise a plurality of thin film layers selected according to their optical properties. In the specific exemplary filters 217a , 217b , 217c , it is designed to have blue wave high transmission such that blue LED light is emitted from the light guide plate proximate to the device 200 . The filters also process the high reflection of the red and green waves to reduce back reflection from the quantum dot material 205 back to the light guide.

An exemplary low pass filter 217a , 217b , 217c includes a thin film stack of multiple layers of high refractive index and low refractive index materials. In some embodiments, the stack includes odd layers, and in other embodiments, the stack includes even layers. In some embodiments, the plurality of layers includes 2 or more layers, 3 or more layers, 4 or more layers, 5 or more layers, 6 or more layers, 7 or more layers, 8 or more Layer, 9 or more layers, 10 or more layers, 11 or more layers, 12 or more layers, 13 or more layers, 14 or more layers, 15 or more layers, 16 or more layers, 17 or more layers, 18 or more layers, 19 or more layers, 20 or more layers, 21 or more layers, 22 or more layers, 23 or more layers, 24 or more layers, 25 or More layers, 26 or more layers, 27 or more layers, 28 or more layers, 29 or more layers, and the like. In an embodiment, the exemplary filter comprises a plurality of alternating layers of a suitable high refractive index material and a suitable low refractive index material. Exemplary high refractive index materials include, but are not limited to, Nb ₂ O ₅ , Ta ₂ O ₅ , TiO _{2 ,} and composite oxides thereof. Exemplary low refractive index materials include, but are not limited to, SiO ₂ , ZrO ₂ , HfO ₂ , Bi ₂ O ₃ , La ₂ O ₃ , Al ₂ O _{3 ,} and composite oxides thereof. In one embodiment, as provided in Table 1 below, the exemplary filter includes alternating layers having a total thickness of Nb ₂ O ₅ and SiO _{2 of} approximately 1.8 μm designed to reflect light of 550 nm and 632 nm through 450 nm of light. Table 1

7 and FIG. 8 is a diagram illustrating the optical performance of some embodiments of the present disclosure. Referring to FIG. 7, from the optical performance of the filter 1 of Table providing normal incidence. It should be noted that the described embodiments provide high transmission (solid line) at 450 nm and near 100% reflection (dashed line) over 550-640 nm. Referring to FIG. 8, there is provided an optical filter performance from Table 1 that when the incidence angle at 50 °. It should be noted that the described embodiments provide for the transmission of blue light and the reflection of red and green light at high angles of incidence.

Exemplary embodiments of the filter can be used as direct or edge-lit light guide plate and close to the QD material (i.e., the QD was used as an intermediate material and a light guide plate or the first reference to the above-described FIG. 2B and 2C) between. For example, with continued reference to FIG . 2C , the exemplary filter 217c can increase the efficiency of light extraction from the package. In other embodiments, the low pass filter can be placed on the cover glass (eg, the second substrate 215 ) such that the UV absorbing material is also an interference filter. In particular, the material used as a high refractive index material absorbs sufficient UV to enable the laser welding process disclosed herein. The layers of exemplary materials can be deposited by any number of thin film methods known in the art, such as jet, plasma enhanced chemical vapor deposition, and the like. The film or layer can be deposited directly onto the light guide or substrate or as a separate layer and then attached through an optically clear adhesive. It has been found that the embodiment (1) described herein with such filters causes higher forward output light, enhances the overall brightness of the device 200 or the light guide, (2) improves quantum dot conversion efficiency, enables less Quantum dot materials, and (3) rely on traditional thin film processing techniques to facilitate fabrication.

In some embodiments, the first substrate 210 , the second substrate 207, and/or the third substrate 215 can be selected from a glass substrate and can include any glass known in the art for display and other electronic devices. Suitable glasses can include, but are not limited to, aluminosilicates, basic aluminosilicates, borosilicates, basic borosilicates, aluminoboronates, basic aluminoborates, and other suitable glasses. In various embodiments, the substrates can be chemically strengthened and/or thermally tempered. Non-limiting examples of suitable commercially available substrates include EAGLE XG ^® , Lotus ^TM , Iris ^TM , Willow ^{® ,} and Gorilla ^® glass from Corning Incorporated, and the like. According to some non-limiting embodiments, ion-exchanged chemically strengthened glass can be used as the substrate.

According to various embodiments, the first, second, and/or third glass substrates 201 , 207 , 215 may have a compressive stress greater than about 100 MPa and a layer depth (DOL) greater than about 10 microns of compressive stress. In a further embodiment, the first, second, and/or third glass substrates can have a compressive stress greater than about 500 MPa and a DOL greater than about 20 microns or a compressive stress greater than about 700 MPa and a DOL greater than about 40 microns. . In a non-limiting embodiment, the first, second, and/or third glass substrates can have a thickness of less than or equal to 3 mm, such as from about 0.1 mm to about 2.5 mm, from about 0.3 mm to about 2 mm, about 0.5 mm. To about 1.5 mm or from about 0.7 mm to about 1 mm, including all ranges and subranges therebetween.

In various embodiments, the first, second, and/or third glass substrates can be transparent or substantially transparent. The term "transparent" as used herein is intended to indicate that the substrate having a thickness of approximately 1 mm has a transmittance of greater than about 80% in the visible region of the spectrum (400-700 nm). For example, an exemplary transparent substrate can have a transmittance of greater than about 85%, such as greater than about 90% or greater than about 95%, in the visible range, including all ranges and subranges therebetween. In some embodiments, an exemplary glass substrate can have a transmittance of greater than about 50% in the ultraviolet (UV) region (200-400 nm), such as greater than about 55%, greater than about 60%, greater than about 65%, greater than Transmittance of about 70%, greater than about 75%, greater than about 80%, greater than about 85%, greater than about 90%, greater than about 95%, or greater than about 99%, including all ranges and subranges therebetween.

According to various embodiments, the second substrate 207 can be selected from an inorganic substrate, such as an inorganic substrate having a thermal conductivity higher than that of glass. For example, suitable inorganic substrates can include substrates having relatively high thermal conductivity, such as greater than about 2.5 W/mK (eg, greater than about 2.6, 3, 5, 7.5, 10, 15, 20, 25, 30, 40, 50, 60, 70, 80, 90 or 100 W/mK), for example, in the range of from about 2.5 W/mK to about 100 W/mK, including all ranges and subranges therebetween. In some embodiments, the thermal conductivity of the inorganic substrate can be greater than 100 W/mK, such as from about 100 W/mK to about 300 W/mK, (eg, greater than about 100, 110, 120, 130, 140, 150, 160, 170, 180, 190, 200, 210, 220, 230, 240, 250, 260, 270, 280, 290 or 300 W/mK), including all ranges and subranges therebetween.

According to various embodiments, the inorganic substrate can comprise a ceramic substrate that can comprise a ceramic or glass-ceramic substrate. In a non-limiting embodiment, the second substrate 207 can comprise aluminum nitride, aluminum oxide, tantalum oxide, boron nitride, tantalum carbide, or the like. In some embodiments, the inorganic substrate can have a thickness of from about 0.1 mm to about 3 mm, for example, from about 0.2 mm to about 2.5 mm, from about 0.3 mm to about 2 mm, from about 0.4 mm to about 1.5 mm, from about 0.5 mm to about 1 mm, from about 0.6 mm to about 0.9 mm, or from about 0.7 mm to about 0.8 mm, including all ranges and subranges therebetween. In an additional embodiment, the inorganic substrate has little or no absorption at a given laser operating wavelength (eg, at UV wavelengths (200-400 nm) or at visible wavelengths (400-700 nm). For example, the second inorganic substrate can absorb less than about 10%, such as less than about 5%, less than about 3%, less than about 2%, or less than about 1% of absorption at the operating wavelength of the laser, such as about 1% to About 10%. In some embodiments, the inorganic substrate can be transparent or scattering.

In a further embodiment, the second inorganic substrate can be doped with at least one dopant capable of absorbing light at a predetermined wavelength (eg, at a predetermined operating wavelength of the laser). The dopant includes, for example, ZnO, SnO, SnO ₂ , TiO ₂ or the like. In some embodiments, the dopant can be selected from compounds that absorb at UV wavelengths (200-400 nm). The amount of dopant can be incorporated into the inorganic substrate to sufficiently induce absorption of the inorganic substrate at a predetermined wavelength. For example, the dopant can be incorporated into the inorganic substrate having a concentration greater than about 0.05 wt% (500 ppm) (eg, in the range of from about 500 ppm to about 106 ppm). In some embodiments, the dopant concentration can be greater than about 0.5 wt%, greater than about 1 wt%, greater than about 2 wt%, greater than about 3 wt%, greater than about 4 wt%, greater than about 5 wt%, greater than about 6 wt%, greater than About 7 wt%, greater than about 8 wt%, greater than about 9 wt%, or greater than about 10 wt%, including all ranges and subranges therebetween. According to additional embodiments, the dopant may have a concentration greater than about 10 wt%, for example, about 20 wt%, 30 wt%, 40 wt%, 50 wt%, 60 wt%, 70 wt%, 80 wt%, or 90 wt%, including All ranges and sub-ranges. In a further embodiment, the doped inorganic substrate can comprise about 100% dopant, such as an example of a ZnO ceramic substrate.

According to various embodiments, the first, second, and/or third substrates can be selected such that the coefficients of thermal expansion (CTE) of the substrates are substantially similar. For example, the CTE of the third or second substrate is within 50% of the CTE of the first substrate, for example, within about 40%, within about 30%, within about 20%, and about 15% of the CTE of the first substrate. Within, within about 10% or within about 5%. By way of non-limiting example, the CTE of the first substrate (at a temperature in the range of about 25-400 ° C) ranges from about 30 x 10 ^-7 / ° C to about 90 x 10 ^-7 / ° C, for example, about 40 x 10 ^{- 7} / ° C to about 80 x 10 ^-7 / ° C or about 50 x 10 ^-7 / ° C to about 60 x 10 ^-7 / ° C (for example about 30, 35, 40, 45, 50, 55, 60, 65, 70, 75 , 80, 85 or 90x10 ^-7 / ° C), which includes all ranges and sub-ranges therebetween. The non-limiting embodiment, the glass substrate may be a glass Corning ^® Gorilla ^®, having 85x10 ^-7 CTE in the range of from about 75 to about / ° C, or of Corning ^® EAGLE XG ^®, Lotus ^TM Willow ^® or glass, having CTE in the range of from about 30 to about 50 x 10 ^-7 / °C. The second substrate can comprise an inorganic, for example, ceramic or glass-ceramic substrate having a temperature (at a temperature in the range of about 25-400 ° C) of from about 20 x 10 ^-7 / ° C to about 100 x 10 ^-7 / ° CCTE, for example From about 30x10 ^-7 /°C to about 80x10 ^-7 /°C, about 40x10 ^-7 /°C to about 70x10 ^-7 /°C or about 50x10 ^-7 /°C to about 60x10 ^-7 /°C (for example 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95 or 100x10 ^-7 / ° C), including all ranges and subranges therebetween.

2A-C of FIG. The at least one cavity 209 is illustrated as having a trapezoidal cross-section, it should be understood that, as desired given application, these cavities can have any given shape or size. For example, the cavities can have a square, cylindrical, rectangular, semi-circular or semi-elliptical cross section or irregular cross section, and the like. The third substrate 215 or the surface 210 of the first substrate comprises at least one cavity 209 (see FIG. 2C and 5) or the third or the first and the second substrate contains a cavity is also possible. Alternatively or additionally, the cavity within the first or second substrate can be filled with a material that is transparent at one or both of the visible wavelengths or LED operating wavelengths.

Further, the FIG. 2A-B shows a sealing apparatus comprising a single cavity 209, comprising a plurality of cavities or a sealing means is also easy to fall within the scope of the present disclosure. For example, the sealing device can comprise any number of cavities 209 that can be arranged and or separated in any desired manner including regular and irregular patterns. Further, a single cavity of FIG. 2A-B 209 and the quantum dot LED elements, it should be understood that this description is non-limiting. Also contemplated that do not contain one or more cavities of the quantum dot and / or LED elements (see FIG second 2C). Embodiments in which one or more cavities comprise a plurality of LED elements and/or quantum dots are also contemplated. Moreover, it is not necessary for each cavity to contain the same number or number of quantum dots and/or LED elements, such a number of cavities and some cavities that do not contain quantum dots and/or LED elements are also possible.

The at least one cavity 209 can have any given depth, for example, the type and/or shape and/or number of articles (eg, quantum dots and/or LDs) encapsulated within the cavity are suitably selected. By way of non-limiting example, the at least one cavity 209 can extend to a depth of less than about 1 mm within the first and/or second substrate, such as less than about 0.5 mm, less than about 0.4 mm, less than about 0.3 mm, less than about 0.2 mm, less than about 0.1 mm, less than about 0.05 mm, less than about 0.02 mm, or less than about 0.01 mm, including all ranges and subranges therebetween, such as from about 0.01 mm to about 1 mm. It is also conceivable to be able to use a column of cavities having the same or different depths, the same or different shapes and/or the same or different dimensions compared to the other cavities in the column.

In some embodiments, the at least one cavity 209 can comprise at least one quantum dot 205 . The quantum dots can have different shapes and/or sizes depending on the desired wavelength of the emitted light. For example, the frequency of the emitted light increases as the size of the quantum dot decreases, for example, as the size of the quantum dot increases, the color of the emitted light can change from red to blue. When irradiated with blue, UV or near UV light, the quantum dots can convert the light into longer wavelength red, yellow, green or blue light. According to various embodiments, the quantum dots can be selected from red and green quantum dots that emit at red and green wavelengths when irradiated with blue, UV or near UV light. For example, the LED element can emit blue light (near 450-490 nm), UV light (close to 200-400 nm), or near UV light (near 300-450 nm).

Furthermore, the at least one cavity can comprise the same or different types of quantum dots, for example it is possible to emit quantum dots of different wavelengths. For example, in some embodiments, the cavity can contain quantum dots that emit green and red wavelengths to produce a red-green-blue (RGB) spectrum within the cavity. However, according to other embodiments, it is possible for a single cavity to contain quantum dots that only emit the same wavelength, such as a cavity containing only green quantum dots or a cavity containing only red quantum dots. For example, the sealing device can comprise a series of cavities, wherein nearly one third of the cavities are filled with green quantum dots and nearly one third of the cavities are filled with red quantum dots, and the cavities Nearly one-third remain blank (to emit blue light). With this configuration, the entire array is capable of producing RGB spectra, as well as dynamic dimming of individual colors.

Of course, it should be understood that quantum dots of any ratio, color or number of any number are possible and are contemplated as falling within the scope of the present disclosure. Those of ordinary skill in the art have the ability to select such configured cavities or such cavities and the types and numbers of quantum dots to be placed within each cavity to achieve the desired effect. Moreover, although a device for displaying red and green quantum dots of a device is discussed herein, it should be understood that any type of quantum dot capable of emitting light of any wavelength, including but not limited to red, orange, yellow, green, blue, can be used. Or any other color in the visible spectrum (eg, 400-700 nm).

Exemplary quantum dots can have a variety of shapes. Examples of shapes of quantum dots include, but are not limited to, spheres, rods, discs, tetrapods, other shapes, and/or mixtures thereof. Exemplary quantum dots can also be included in the polymer resin such as, but not limited to, acrylate or another suitable polymer or monomer. Such exemplary resins may also include suitable dispersed particles including, but not limited to, TiO ₂ or similar particles.

In some embodiments, the quantum dots comprise an inorganic semiconductor material that allows for a combination of solubility and processability of the polymer having high efficiency and stability of the inorganic semiconductor. Inorganic semiconductor quantum dots are generally more stable in the presence of water vapor and oxygen than their organic semiconductor analogs. As mentioned above, because of its quantum confinement emission properties, its luminescence is a very narrow band and produces highly saturated color light characterized by a single Gaussian spectrum. Since the microcrystal diameter controls the optical band gap of the quantum dot, fine adjustment of the absorption and emission wavelengths can be achieved through synthesis and structural changes.

In some embodiments, the inorganic semiconductor microcrystalline quantum dots comprise a Group IV element, a II-VI compound, a II-V compound, a III-VI compound, a III-V compound, an IV-VI compound, and I-III. a Group VI compound, a Group II-IV-VI compound or a Group II-IV-V compound, an alloy thereof and/or mixtures thereof, including quaternary and ternary alloys and/or mixtures. Examples include, but are not limited to, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP InAs, InSb, TlN, TlP, TlAs, TlSb, PbO, PbS, PbSe, PbTe, alloys thereof, and/or mixtures thereof, including quaternary and ternary alloys and/or mixtures.

In some embodiments, a quantum dot can include a shell above at least a portion of a surface of the quantum dot. This structure is also known as a core-shell structure. The shell can comprise an inorganic material, more preferably an inorganic semiconductor material, which is capable of passivating the surface electronic state to a range further than the organic covering group. Inorganic semiconductor materials for use in the shell include, but are not limited to, Group IV elements, Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, I-III- Group VI compounds, Group II-IV-VI compounds or Group II-IV-V compounds, alloys thereof and/or mixtures thereof, including quaternary and ternary alloys and/or mixtures. Examples include, but are not limited to, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, GaSe, InN, InP InAs, InSb, TlN, TlP, TlAs, TlSb, PbO, PbS, PbSe, PbTe, alloys thereof, and/or mixtures thereof, including quaternary and ternary alloys and/or mixtures.

In some embodiments, the quantum dot material can comprise a Group II-VI semiconductor, including CdSe, CdS, and CdTe, and can be used to emit across the entire visible spectrum with narrower distribution and high emission quantum efficiency. For example, a CdSe quantum dot of about 2 nm diameter is emitted under blue light and an 8 nm diameter particle is emitted under red light. The quantum dot composition is changed to a region where the composition changes the electromagnetic spectrum by replacing other semiconductor materials with different band gaps, wherein the quantum dot emission can be tuned. In other embodiments, the quantum dot material is cadmium free. Examples of cadmium-free quantum dot materials include InP and In _x Ga _x-1 P. In an example of a method of preparing In _x Ga _x-1 P, InP can be doped with a small amount of Ga to transfer the band gap to high energy, thereby entering a wavelength slightly blue to red/green light. In an example of another method for preparing the ternary material, GaP can be doped with In to enter a wavelength that is slightly redder than the deep blue light. InP has a direct block band gap of 1.27 eV, which can be tuned with Ga exceeding 2eV doping. Quantum dot materials containing only InP are capable of providing tuned emission from yellow/green to deep red, and the addition of a small amount of Ga in InP can facilitate tuning the emission to dark green/light green. Quantum dot materials comprising In _x Ga _x-1 P (0 < x < 1) are capable of providing light emission, which, if not the entire visible spectrum, is tunable over at least a larger portion of the visible spectrum. InP/ZnSeS core-shell quantum dots can be tuned from deep red to yellow light with 70% efficiency. For high CRI white QD-LED emitters, InP/ZnSeS can be used to process the red portion of the visible spectrum to the yellow/green portion and In _x Ga _x-1 P will provide dark green to light green emission.

In some embodiments, e.g., see section 2A, 2B and / or 2C, the quantum dot material can be provided in the predetermined spectrum emission tunable. For example, an exemplary quantum dot material can be selected such that it is emitted from only a single spectrum, such as, but not limited to, a red spectrum, for example, from about 620 nm to about 750 nm. Of course, an exemplary single wavelength quantum dot material can be selected such that when excited by a proximity source (eg, the at least one LED element 203 ), other spectra are emitted (eg, 308-450 nm violet, 450-495 nm blue, 495-570 nm). Green light, yellow light at 570-590 nm and orange light at 590-620 nm). In other embodiments, the quantum dot materials are capable of providing tunable emission in other spectra, such as, but not limited to, infrared (eg, 700 nm to 1 mm) or ultraviolet (eg, 10 nm to 380 nm).

The first surface of the first substrate 201 and the second surface of the second substrate 207 are bonded by sealing or soldering 211 . The seal 211 can extend around the at least one cavity 209 to seal the workpiece within the cavity. For example, as shown, the quantum dot 205 can be sealed and the at least one LED element 203 of FIG. 2A-B in the same cavity of the at least one package. In the case of a plurality of cavities, the seal can extend around a single cavity, for example, the cavities in the column are separated from one another to create one or more discrete sealing areas or pockets, or the seal can encircle multiple The cavity extends, for example, two or more cavities, such as three, four, five, ten or more cavities, and the like. It is also possible to include the sealing means comprising one or more cavities which may also be unsealed depending on the desired (for example, in the absence of a cavity of LEDs and/or quantum dots). Thus, it should be understood that the various cavities can be empty or lack quantum dots and/or LEDs that are thus sealed or unsealed as appropriate or desired. In some embodiments, the seal 211 can comprise U.S. Patent Application No. 13/777, glass as described in co-pending 584,13 / 891,291,14 / 270,828 and No. 14 / 271,797 - to - sealing glass, glass - to - glass-ceramic or glass-to-ceramic seals, the contents of which are hereby incorporated by reference in its entirety.

In other non-limiting embodiments, the device can include a sealing layer disposed between and coupled to the first and second substrates. At least a portion of the first surface of the second substrate 317 and at least a portion of the second surface 307 of the example, as shown, the sealing material layer 315 or the first substrate 301 can be in contact with the third 319 in FIG. The sealing layer 315 can be selected, for example, from a glass composition having an absorption of greater than 10% at a predetermined laser operating wavelength and/or a relatively low glass transition temperature ( _Tg ). According to various embodiments, the sealing layer can be selected from borate glass, phosphate glass, tellurite glass, and chalcogenide glass (eg, tin phosphate glass, tin fluorophosphate glass, and tin fluoroborate glass).

In general, suitable sealing layer materials can include low _Tg glass and suitable reactive oxides of copper or tin. By way of non-limiting example, the sealing layer can comprise glass having a _Tg of less than or equal to about 400 °C. For example, less than or equal to about 350 ° C, about 300 ° C, about 250 ° C, or about 200 ° C, including all ranges and subranges therebetween, such as from about 200 ° C to about 400 ° C. Suitable sealing layers and methods are disclosed, for example, in U.S. Patent Application Serial Nos. 13/777,584, 13/891,291, 14/270,828, and the entire disclosures of which are incorporated herein by reference.

The thickness of the sealing layer 315 can vary depending on the application, in some embodiments, in the range of from about 0.1 microns to about 10 microns, such as less than about 5 microns, less than about 3 microns, less than about 2 microns, less than about 1 micron. Less than about 0.5 microns or less than about 0.2 microns, including all ranges and subranges therebetween. In various embodiments, the sealing layer 315 can have greater than about 10%, greater than about 15%, greater than about 20%, greater than about 25%, greater than about 30%, greater than the laser operating wavelength (at room temperature). An absorption of about 35%, greater than about 40%, greater than about 45%, or greater than about 50%, including all ranges and subranges therebetween, such as from about 10% to about 50%. For example, the sealing layer can absorb at UV wavelengths (200-400 nm), for example, having an absorption greater than about 10%. In some embodiments, the sealing layer can be transparent or substantially transparent to visible light, for example, having a transmittance of greater than about 80% in the visible region of the spectrum (400-700 nm).

As the sealing layer 315 can be in the first and second substrate 310, or a layer comprising a continuous sheet between the section 307 shown in FIG. 3. For example, the sealing layer 315 can cover the first surface 317 or the second surface 319 such that the sealing layer covers the at least one cavity (not shown). In such embodiments, the sealing layer 315 is substantially transparent at the visible wavelength and is absorbed at the UV wavelength (or any other predetermined laser operating wavelength). Alternatively, as shown on FIG. 4A-B, the sealing layer 415 can be provided, so that it is formed around the frame (not shown) of the cavity. The sealing layer can be any desired shape or pattern applied to the first substrate 401 (as shown in FIG. 4B) or the second substrate 407 (not shown in Figure 4B). In such embodiments, the sealing layer 415 is substantially transparent at the visible wavelength or absorbs and/or substantially transparent at the visible wavelength or absorbs at the UV wavelength (or any other predetermined laser operating wavelength). For example, the laser can be selected to operate at any wavelength, wherein the sealing layer is absorbing and the first substrate is not absorbed. Of course, the sealing layers 315 , 415 can have any shape as desired for a particular application depending on the substrate and/or cavity shape.

As shown in FIG. 2A-B of the seal between the first and the second substrate 211 can, the seal 415 is formed through the layer 315 as shown in Fig 3-4. For example, a laser beam operating at a given wavelength can be directed to the sealing layer (or sealing interface) to form a seal or weld between the two substrates. Without wishing to be bound by theory, it is believed that the absorption of light from the laser beam by the sealing layer and the transient absorption induced by the first and second substrates can cause localized heating (eg, proximity to the _{Tg of} the first substrate ₎ The temperature) and the first sealing layer and/or the glass substrate are melted to form a bond between the two substrates. According to various embodiments, the seal or weld 211 can have a width in the range of from about 10 microns to about 300 microns, such as from about 25 microns to about 250 microns, from about 50 microns to about 200 microns, or from about 100 microns to about 150 microns, It contains all the ranges of the period and its sub-ranges.

In various embodiments, as disclosed herein, the first and second substrates can be sealed together to create a seal or weld around the at least one cavity. In some embodiments, the seal or weld can be a closed seal, for example, forming one or more airtight and/or waterproof pockets within the device. For example, the at least one cavity can be a closed seal such that the cavity is impermeable or substantially impervious to moisture, moisture, air, and/or other contaminants. By way of non-limiting example, the hermetic seal can be configured to limit the transpiration (diffusion) of oxygen to less than about 10 ^-2 cm ³ /m ² /day (eg, less than about 10 ^-3 /cm ³ /m ² /day) And limiting the transpiration of water by about 10 ^-2 g/m ² /day (eg, less than about 10 ^-3 , 10 ^-4 , 10 ^{-5 ,} or 10 ^-6 g / m ² /day). In various embodiments, the closure seal can substantially prevent water, moisture, and/or air from contacting the components of the enclosed seal protection.

According to some aspects, the total thickness of the sealing device can be less than about 6 mm, such as less than about 5 mm, less than about 4 mm, less than about 3 mm, less than about 2 mm, less than about 1.5 mm, less than about 1 mm, or less than about 0.5 mm, including All ranges and sub-ranges in between. For example, the thickness of the sealing device can range from about 0.3 mm to about 3 mm, such as from about 0.5 mm to about 2.5 mm, or from about 1 mm to about 2 mm, including all ranges and subranges therebetween.

The sealing devices disclosed herein can be used in a variety of display devices or display elements including, but not limited to, backlights or backlit displays, such as televisions, computer monitors, handheld devices, and the like, which can include a variety of additional components. The sealing devices disclosed herein can also be used as lighting devices, such as luminaires and solid state lighting devices. For example, a sealing device comprising quantum dots in contact with at least one LED die can be used for general lighting, for example, a broadband output of a simulated aspect. Such illumination devices can include quantum dots of various sizes, for example, emitted at various wavelengths (eg, wavelengths in the range of 400-700 nm).

Also disclosed herein are sealing devices comprising laser diodes, the devices comprising a glass substrate comprising a first surface; an inorganic substrate comprising a second surface; a sealing layer with at least a portion of the first surface and at least a portion The second surface is in contact with; and at least one seal that bonds the glass substrate to the inorganic substrate through the sealing layer, wherein the inorganic substrate has a thermal conductivity of at least 2.5 W/mK, wherein the first or second At least one of the surfaces includes at least one cavity including at least one laser diode, and wherein the seal extends around the at least one cavity. Closed-packaged laser diodes are useful in optical devices, printers, and the like.

Referring to FIG . 5 , the exemplary sealing device 500 can include a first glass substrate 501 and a second inorganic substrate 507 sealed together through a seal 511 to form at least one cavity 509 . A laser diode 521 or other light emitting structure can be packaged within the cavity, optionally on the support member 523 . In some embodiments, the support member 523 can be used to adjust the height of the laser diode 521 within the desired sealed package to emit light at a predetermined area or window 525 of the first glass substrate 501 . Exemplary laser diodes can include semiconductor materials such as gallium nitride, gallium arsenide, aluminum gallium arsenide, gallium antimonide, and indium phosphide. Laser diodes are capable of emitting light of any wavelength, such as visible (~400-700 nm) and infrared (~700-1400 nm) waves. In some embodiments, the laser diode can emit blue or green light having a wavelength in the range of from about 400 nm to about 670 nm.

It should be understood that the disclosed embodiments relating to the sealing device 200 (including the QD/LED) can be incorporated into the sealing device 500 (including the LD) without limitation. For example, 507 can be selected from a material similar to the first and the second glass substrate 501 can have the inorganic substrate and the second as in FIG. 2 A-B, respectively, of the substrate 201,207 and similar properties. Similarly, similar to the above can be utilized on the sealing layer 315 of FIG. 3-4, and a pattern 415 in a similar manner as described above to form a seal 211. The seal 511. Further, the cavity 509 can be similar to that shown in and with reference to the FIG. 2A-B of the cavity 209 and the shape properties.

Further disclosed herein is a sealing device comprising a glass substrate comprising a first surface, the doped inorganic substrate comprising a second surface; and at least one seal bonding the glass substrate to the doped inorganic substrate, wherein The doped inorganic substrate comprises a thermal conductivity greater than about 2.5 W/mK and at least about 0.05 wt% of at least one dopant selected from the group consisting of ZnO, SnO, SnO ₂ or TiO ₂ . In some embodiments, the glass substrate can be bonded to the inorganic substrate or bonded through a sealing layer.

Referring to FIG . 6 , an exemplary sealing device 600 can include a first glass substrate 601 and a doped inorganic substrate 607 sealed together by a seal 611 . Although not shown, one or both of the first or second substrates can comprise at least one cavity. The at least one cavity can comprise any suitable workpiece including, but not limited to, quantum dots, LEDs, laser diodes, or any other illumination device. For example, the sealing device 600 can comprise a cavity, the cavity comprising a laser diode as shown in FIG. 2A-B of the at least one quantum dot and at least one LED, or as shown in FIG. 5 and the like.

It should be understood that the disclosed embodiments with respect to sealing device 200 (including QD/LED) and 500 can be incorporated into sealing device 600 without limitation. For example, the first glass substrate 601 and second substrate 607 can be selected from inorganic materials and can have similar as in the first and in FIG. 2 A-B, respectively, of the substrate 201,207 and similar properties. For example, the doped inorganic substrate 607 can comprise an inorganic substrate having a thermal conductivity of at least about 2.5 W/mK and doped with (eg, at least about 0.05 wt%) capable of being at a predetermined wavelength (eg, laser) At least one dopant that absorbs light at a predetermined operating wavelength). Suitable dopants can include, for example, ZnO, SnO, SnO ₂ , TiO _{2 ,} and the like. In some embodiments, the dopant can be selected from compounds that absorb at UV wavelengths (200-400 nm).

Similarly, similar to the above can be utilized on the sealing layer 315 of FIG. 3-4, and a pattern 415 in a similar manner as described above to form a seal 211. The seal 611. In an additional embodiment, as discussed in detail below with respect to the methods, for example, the seal 611 can be formed directly on the glass substrate and the doping due to absorption of the at least one dopant at the laser operating wavelength. Between the inorganic substrates. Further, these substrates 601, 607 can comprise one or more cavities, which have similar reference first to FIGS. 2A-B and shown in the cavity 209 and the shape and properties of the containing section or FIG. 2A-B Figure 5 shows the workpiece. method

Disclosed herein are methods for fabricating a sealing device, the method comprising: placing the at least one quantum dot and at least one LED element in at least one cavity on a first surface of a glass substrate or a second surface of an inorganic substrate; Placing a sealing layer over at least a portion of the first surface or at least a portion of the second surface; contacting the first surface with the second surface with the sealing layer disposed therebetween to form a sealing interface; and will be at a predetermined wavelength a downwardly operating laser beam directed to the sealing interface to form a seal between the glass substrate and the inorganic substrate, the seal extending around the at least one cavity comprising the at least one quantum dot and the at least one LED element, wherein The inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

Also disclosed herein are methods for fabricating a sealing device comprising a laser diode, the methods comprising: placing the at least one quantum dot and the at least one LED component in the at least one cavity on a first surface of the glass substrate or an inorganic substrate a second surface; placing a sealing layer over at least a portion of the first surface or at least a portion of the second surface; contacting the first surface with the second surface with the sealing layer disposed therebetween to form a sealing interface And directing a laser beam operating at a predetermined wavelength to the sealing interface to form a seal between the glass substrate and the inorganic substrate, the seal extending around the at least one cavity including the at least one laser diode, Wherein, the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

Further disclosed herein are methods for fabricating a sealing device, the method comprising: doping at least one dopant that absorbs at a predetermined wavelength in an inorganic substrate; and affixing the first surface of the glass substrate to the doped inorganic substrate Two surface contacts to form a sealing interface; and directing a laser beam operating at a predetermined wavelength to the sealing interface to form a seal between the glass substrate and the inorganic substrate, wherein the inorganic substrate has a thickness greater than about 2.5 W /mK thermal conductivity.

Further disclosed herein are methods for fabricating a sealing device, the method comprising: contacting a first surface of a glass substrate and a second surface of the inorganic substrate with a sealing layer to form a sealing interface; and a thunder that will operate at a predetermined wavelength Directing a beam of light to the sealing interface to form a seal between the glass substrate and the inorganic substrate; wherein a difference between a CTE of the glass substrate and a CTE of the inorganic substrate is less than 20×10 ^-7 /° C., and The inorganic substrate has a thermal conductivity greater than about 2.5 W/mK.

According to various embodiments, the sealing layer can optionally be applied to at least a portion of the glass substrate or at least a portion of the inorganic substrate prior to sealing. As mentioned above, the first (glass) or second (inorganic) substrate may comprise at least one cavity. The cavities are disposed in the first or second substrate, for example, by pressing, molding, cutting, or any other suitable method. If present, the sealing layer can be applied over or around the cavity to form a frame. In some embodiments, at least one quantum dot and at least one LED element can be placed within the cavity. In an alternative embodiment, at least one laser diode can be placed within the cavity. In a further embodiment, the workpiece can be placed within the cavity.

According to various embodiments, the inorganic substrate can be a doped inorganic substrate. For example, doping is performed during the formation of the inorganic substrate, for example, at least one dopant or a precursor thereof can be added to the batch for forming the inorganic substrate. Suitable dopants can include, for example, ZnO, SnO, SnO ₂ , TiO _{2 ,} and the like. The concentration of exemplary dopants can include, for example, greater than 0.05 wt% (eg, greater than about 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 wt%, etc.).

The first surface and the second surface can then optionally contact the sealing layer disposed therebetween to form a sealing interface. Thus, the substrates can be sealed, for example, around the at least one cavity. According to various non-limiting embodiments, the seal can be performed by laser welding. For example, the laser can be directed to the sealing interface or such that the sealing layer absorbs the laser energy and the interface is heated to a _temperature, T _g is close to the glass substrate. Therefore, the melting of the sealing layer and/or the glass substrate can form a bond between the first and second substrates. Alternatively, the sealing layer may be absent and the second substrate may be doped with inorganic, which absorbs the laser energy and thus the interface to be close to the heating temperature T _g of the glass substrate. In various embodiments, the laser seal is performed at a temperature near room temperature, such as from about 25 ° C to about 50 ° C, or from about 30 ° C to about 40 ° C, including all ranges and subranges therebetween. Heating at the sealing interface can cause the temperature to rise above the temperature, which is located in the sealed area, thereby reducing the risk of damage to the heat sensitive workpiece to be encapsulated within the device.

The laser can be selected from any suitable laser known in the art for welding glass substrates. For example, the laser can emit light at UV (~200-400 nm), visible (~400-700 nm) or infrared (~700-1600 nm) wavelengths. According to various embodiments, the laser may operate at a predetermined wavelength ranging from about 300 nm to about 1600 nm, such as from about 350 nm to about 1400 nm, from about 400 nm to about 1000 nm, from about 450 nm to about 750 nm, from about 500 nm to about 700 nm, or about 600 nm to about 650 nm, which includes all ranges of the period and its subranges. In a wear debris embodiment, the laser can be a UV laser operating at about 355 nm, a visible light laser operating at about 532 nm, or a near infrared laser operating at about 810 nm or any suitable NIR wavelength. According to an additional embodiment, the laser operating wavelength can be selected to be any wavelength at which the first glass substrate is substantially transparent and the sealing layer and/or inorganic substrate is being absorbed. Exemplary lasers include IR lasers, argon ion lasers, helium-cluster lasers, and third harmonic generation lasers.

In certain embodiments, the laser beam can have an average power of from about 0.2 W to about 50 W, such as from about 0.5 W to about 40 W, from about 1 W to about 30 W, from about 2 W to about 25 W, from about 3 W to about 20 W, about 4W to about 15W, from about 5W to about 12W, from about 6W to about 10W, or from about 7W to about 8W, including all ranges and subranges therebetween. In some embodiments, the laser can operate at any frequency and operate in a pulsed, modulated (quasi-continuous) or continuous manner. In some embodiments, the laser can be operated in a burst mode, each short pulse comprising a plurality of individual pulses. In some non-limiting embodiments, the laser can have a repetition rate of from about 1 kHz to about 1 MHz, such as from about 5 kHz to about 900 kHz, from about 10 kHz to about 800 kHz, from about 20 kHz to about 700 kHz, from about 30 kHz to about 600 kHz, about 40 kHz. Up to about 500 kHz, from about 50 kHz to about 400 kHz, from about 60 kHz to about 300 kHz, from about 70 kHz to about 200 kHz, or from about 80 kHz to about 100 kHz, including all ranges and subranges therebetween.

According to various embodiments, the beam of light may be directed to and focused onto the sealing interface, below the sealing interface, or above the sealing interface. In some non-limiting embodiments, the beam spot diameter on the interface can be less than about 1 mm. For example, the beam spot diameter can be less than about 500 microns, such as less than about 400 microns, less than about 300 microns, less than about 200 microns, less than about 100 microns, less than about 50 microns, or less than about 20 microns, including all ranges therebetween. Subrange. In some embodiments, the beam spot diameter can range from about 10 microns to about 500 microns, such as from about 50 microns to about 250 microns, from about 75 microns to about 200 microns, or from about 100 microns to about 150 microns, including All ranges and their sub-ranges of the period.

According to various embodiments, sealing the substrate includes scanning or translating a laser beam along the substrates (or the substrates can be translated relative to the laser) using any predetermined path to produce an arbitrary pattern, such as square, rectangular, circular, An elliptical or any suitable pattern or shape, for example, to hermetically seal at least one cavity within the device. The laser beam (or substrate) moves along the interface at the translational speed, the translational speed being changeable by application and depending on, for example, the composition of the first and second substrates and/or the focus configuration and/or the laser power , flatness and / or wavelength changes. In some embodiments, the laser can have a translational speed in the range of from about 1 mm/s to about 1000 mm/s, for example, from about 5 mm/s to about 750 mm/s, from about 10 mm/s to about 500 mm/s, or about From 50 mm/s to about 250 mm/s, such as greater than about 100 mm/s, greater than about 200 mm/s, greater than about 300 mm/s, greater than about 400 mm/s greater than about 500 mm/s, or greater than about 600 mm/s, including all of Scope and sub-range.

According to various embodiments disclosed herein, the laser wavelength, pulse duration, repetition rate, average power, focus conditions, and other related parameters may be varied to create sufficient sealing of the first and second substrates through the sealing layer to The energy together. Those of ordinary skill in the art have the ability to change such parameters as desired for the application. In various embodiments, the laser flux (or intensity) is below a damage threshold of the first and/or second substrate, for example, the laser is sufficient to solder the substrates together but is not damaged The substrates are operated under the conditions of the strength. In some embodiments, the laser beam can operate at a translation speed that is less than or equal to the product of the diameter of the laser beam at the sealing interface and the repetition rate of the laser beam.

It should be understood that the various disclosed embodiments may be described in a particular feature, element or step. It is understood that the particular features, elements, or steps may be interchanged or combined with alternative embodiments in various combinations or arrangements not shown, although related to the description of a particular embodiment.

It should also be understood that the terms "the", "a" or "an" as used herein mean "at least one" and should not be limited to "only one" unless expressly indicated The opposite is true. Thus, for example, reference to "a cavity" includes an example of having such a "cavity" or two or more such "cavities" unless the context clearly dictates otherwise. Similarly, "plural" or "array" is intended to indicate two or more such that "a column of cavities" or "plurality of cavities" indicates two or more such cavities.

Ranges herein are expressed as "about" a particular value and/or to "about" another particular value. When representing such a range, the examples include from the one particular value and/or to the other particular value. Similarly, when the equivalent value is expressed as an approximation, it is understood that the particular value forms another aspect. It should be further understood that the endpoint of each of the ranges is significantly related to the other endpoint and is independently associated with the other endpoint.

All values herein are to be understood as including "approximately" unless stated otherwise. However, it should be further understood that the values listed should be accurately set to "about" regardless of whether they are indicated as "about" or not. Therefore, "a size smaller than 10 mm" and "a size smaller than about 10 mm" include embodiments of "a size smaller than about 10 mm" and "a size smaller than 10 mm".

Any method set forth herein is not intended to be construed as requiring that its steps be performed in a particular order, unless specifically stated otherwise. Accordingly, a method request does not actually recite an order after the steps or the claim or the description is not necessarily limited to a particular order, which is not intended to be inferred.

The use of the terms "comprising", "comprising" or "substantially encompassing", is used in the alternative embodiments. Thus, for example, a suggested alternative embodiment comprising A+B+C includes an embodiment comprising an A+B+C method and an embodiment comprising substantially an A+B+C method.

It will be apparent to those skilled in the art that various modifications and changes can be made in the present disclosure without departing from the spirit and scope of the disclosure. It is to be understood by those of ordinary skill in the art that the present invention is to be construed as the scope of the appended claims. Everything inside.

101‧‧‧ Sealing device
103‧‧‧LED
105‧‧‧Materials
107‧‧‧First substrate
109‧‧‧ cavity
200‧‧‧ Sealing device
201‧‧‧First glass substrate
203‧‧‧LED components
205‧‧ ‧ quantum dots
207‧‧‧Second glass substrate
209‧‧‧ cavity
211‧‧‧ Seal
213‧‧‧Separation of obstacles or membranes
215‧‧‧ third substrate
216‧‧‧Closed sealed package or device
217a‧‧‧ filter
217b‧‧‧ filter
301‧‧‧First substrate
307‧‧‧second substrate
315‧‧‧ Sealing material or layer
317‧‧‧ first surface
319‧‧‧ second surface
401‧‧‧First substrate
407‧‧‧second substrate
415‧‧‧ sealing layer
500‧‧‧ Sealing device
501‧‧‧First glass substrate
507‧‧‧Second inorganic substrate
509‧‧‧ Cavity
511‧‧‧ Seal
521‧‧‧Laser diode
523‧‧‧Support
525‧‧‧ window
600‧‧‧ Sealing device
601‧‧‧ first glass substrate
607‧‧‧Inorganic substrate
611‧‧‧ Seal

The detailed description below is further understood by the same reference

FIG 1 illustrates a cross-sectional view is provided proximate cavity comprises a light emitting diode (LED), a quantum dot film;

Of FIG. 2A-C illustrate a cross-sectional view of some embodiments of the sealing device according to the embodiment of the present disclosure;

FIG 3 illustrates a schematic cross sectional view of the seal layer between two substrates provided in accordance with an embodiment of the present disclosure;

Figure 4A illustrates a cross-sectional view of a sealing frame layer in between the two substrates is provided according to a further embodiment of the present disclosure;

Figure 4B illustrates a top plan view of a substrate layer and a sealing frame according to various embodiments of the present disclosure;

FIG 5 illustrates a cross-sectional view of an additional embodiment of the sealing apparatus of the present disclosure according to the embodiment;

FIG 6 illustrates a cross-sectional view of a further embodiment sealing device according to embodiments of the present disclosure; and

7 and FIG. 8 is a diagram illustrating the optical performance of some embodiments of the present disclosure.

Domestic deposit information (please note according to the order of the depository, date, number)

Foreign deposit information (please note in the order of country, organization, date, number)

(Please change the page separately) No

200‧‧‧ Sealing device

201‧‧‧First glass substrate

203‧‧‧LED components

205‧‧ ‧ quantum dots

207‧‧‧Second glass substrate

211‧‧‧ Seal

215‧‧‧ third substrate

216‧‧‧Closed sealed package or device

217a‧‧‧ filter

217b‧‧‧ filter

Claims (20)

A sealing device comprising: a glass substrate comprising a first surface; an inorganic substrate comprising a second surface; a sealing layer in contact with at least a portion of the first surface and at least a portion of the second surface; At least one seal that bonds the glass substrate to the inorganic substrate through the sealing layer; wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK, wherein at least one of the first and second surfaces Including at least one cavity comprising at least one quantum dot and at least one LED element, or wherein at least one of the first or second surface comprises at least one cavity comprising at least one laser diode And wherein the at least one seal extends around the at least one cavity. The sealing device of claim 1, wherein the glass substrate comprises an aluminosilicate, an alkali aluminate, a borosilicate, an alkali borosilicate, an aluminoboronate, and an alkali a glass in aluminoborosilicate glass. The sealing device of claim 1, wherein the inorganic substrate comprises aluminum nitride, aluminum oxide, hafnium oxide, boron nitride or tantalum carbide. The sealing device of claim 1, wherein the sealing layer comprises a tin fluorophosphate glass, a tungsten-doped tin fluorophosphate glass, a chalcogenide glass, a tellurite glass, a borate glass, and a phosphate a glass in the glass. The sealing device of claim 1, wherein the at least one seal is a laser welded seal. The sealing device of claim 1, wherein the sealing layer is disposed above the at least one cavity, and wherein the sealing layer has an absorption greater than about 10% at a predetermined laser wavelength and at a visible wavelength It is essentially transparent. The sealing device of claim 1, wherein the at least one quantum dot and the at least one LED element are in direct contact with the at least one cavity. The sealing device of claim 1, wherein the at least one quantum dot and the at least one LED element are separated by a separation barrier in the at least one cavity. A display or optical device comprising the sealing device of claim 1. A sealing device comprising: a glass substrate comprising a first surface; a doped inorganic substrate comprising a second surface; and at least one seal bonding the glass substrate to the doped inorganic substrate Wherein the doped inorganic substrate comprises a thermal conductivity greater than 2.5 W/mK and at least about 0.05 wt% of at least one dopant selected from the group consisting of ZnO, SnO, SnO ₂ or TiO ₂ . The sealing device of claim 10, wherein the at least one seal comprises a doped glass inorganic laser welded seal. The sealing device of claim 10, further comprising at least one sealing layer disposed between the glass substrate and the doped inorganic substrate, and wherein the at least one seal comprises an inorganic mine doped with a glass sealing layer Shot welding seal. The sealing device of claim 10, wherein at least one of the first and second surfaces comprises at least one cavity, and wherein the at least one cavity comprises at least one quantum dot and at least one LED element or at least one Laser diode. A sealing device comprising: a first glass substrate comprising a first surface; a second glass substrate comprising a second surface; an inorganic substrate comprising a third surface; a sealing layer, At least a portion of the second surface is in contact with at least a portion of the third surface; at least one seal that bonds the glass substrate to the inorganic substrate through the sealing layer; wherein the inorganic substrate has a thermal conductivity greater than about 2.5 W/mK Rate, wherein at least one of the second or third surfaces comprises at least one cavity comprising at least one quantum dot and at least one LED element, and wherein the at least one seal extends around the at least one cavity. The sealing device of claim 14, wherein the at least one LED element is contained within a first cavity and the at least one quantum dot is contained within a second cavity unrelated to the first cavity. A sealing device comprising: a first glass substrate comprising a first surface; a second glass substrate comprising a second surface; a third substrate comprising a third surface; a first seal, Bonding the first glass substrate to the second glass substrate; wherein at least one of the second or third surfaces comprises at least one cavity comprising at least one quantum dot and at least one LED element, and wherein The at least one seal extends around the at least one cavity. The sealing device of claim 16, wherein the at least one LED element is contained within a first cavity and the at least one quantum dot is contained within a second cavity unrelated to the first cavity. A sealing device comprising: a first glass substrate comprising a first surface; a second glass substrate comprising a second surface; a third substrate comprising a third surface; a first seal, Bonding the first glass substrate to the second glass substrate; wherein at least one of the first or second surface comprises at least one cavity, the cavity comprising at least one quantum dot, and wherein the third surface Adjacent to the at least one LED element, and wherein the at least one seal extends around the at least one cavity. The sealing device of claim 18, further comprising one or more films for screening light of a predetermined wavelength, wherein the one or more films comprise alternating films of high refractive index material and low refractive index material. The sealing device of claim 19, wherein the high refractive index material is selected from the group consisting of Nb ₂ O ₅ , Ta ₂ O ₅ , TiO ₂ and composite oxides thereof, and wherein the low refractive index material is selected It is a group consisting of SiO ₂ , ZrO ₂ , HfO ₂ , Bi ₂ O ₃ , La ₂ O ₃ , Al ₂ O ₃ and a composite oxide thereof.