TW201721908A - Surface emitter with light-emitting area equal to the LED top surface - Google Patents

Surface emitter with light-emitting area equal to the LED top surface Download PDF

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TW201721908A
TW201721908A TW105128659A TW105128659A TW201721908A TW 201721908 A TW201721908 A TW 201721908A TW 105128659 A TW105128659 A TW 105128659A TW 105128659 A TW105128659 A TW 105128659A TW 201721908 A TW201721908 A TW 201721908A
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led
leds
layer
cured
reflective layer
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TW105128659A
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Chinese (zh)
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葛羅葛瑞 倍森
凱文 K 麥
陰山英雄
布蘭登 J 摩倫
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皇家飛利浦有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

Abstract

A method includes forming a wavelength converting layer on a first support, placing light-emitting diodes (LEDs), with their top-emitting surfaces facing down, on the wavelength converting layer, curing the wavelength converting layer so the top-emitting surfaces of the LEDs adhere to the wavelength converting layer, singulating the LEDs by cutting the cured wavelength converting layer between the LEDs, wherein after said singulating each LED has a wavelength converter that exactly overlaps or slightly extends beyond a top-emitting surface of the LED, forming a reflective layer over and in-between the LEDs, curing the reflective layer, wherein the cured reflective layer has a hardness and an abrasion rate greater than the cured wavelength converting layer, and removing a top portion of the cured reflective layer to expose the LEDs.

Description

具有與發光二極體上表面等大小之發光區域之表面發射器Surface emitter having a light-emitting area equal in size to the upper surface of the light-emitting diode

本發明係關於半導體發光二極體(LED),且更特定言之係關於上發射式LED封裝。This invention relates to semiconductor light emitting diodes (LEDs) and, more particularly, to upper emitting LED packages.

小的LED封裝在許多應用(包含相機閃光燈及汽車照明)中提供較大設計靈活性。對於上發射式LED,可期望最小化上發射區域之大小及封裝之整體高度。The small LED package offers greater design flexibility in many applications, including camera flash and automotive lighting. For upper emissive LEDs, it may be desirable to minimize the size of the upper emissive region and the overall height of the package.

在本發明之一或多項實例中,一種方法包含:在一支撐件上形成一波長轉換層;使發光二極體(LED)之上發射表面面向下而將該等LED放置於該波長轉換層上;固化該波長轉換層使得該等LED之該等上發射表面黏著至該波長轉換層;藉由在該等LED之間切割該經固化波長轉換層而單粒化該等LED,其中在該單粒化之後,各LED具有與該LED之一上發射表面精確重疊或略微延伸超出該上發射表面之一波長轉換器;在該等LED上方及中間形成一反射層;固化該反射層,其中該經固化反射層具有大於該經固化波長轉換層之一硬度及一磨蝕速率;及移除該經固化反射層之一上部以暴露該等LED。In one or more examples of the present invention, a method includes: forming a wavelength conversion layer on a support; placing an emission surface on a light emitting diode (LED) face down and placing the LEDs on the wavelength conversion layer Curing the wavelength conversion layer such that the upper emission surfaces of the LEDs are adhered to the wavelength conversion layer; singulating the LEDs by cutting the cured wavelength conversion layer between the LEDs, wherein After singulation, each LED has a wavelength converter that precisely overlaps or slightly extends beyond the emitting surface of the LED; a reflective layer is formed over and in the middle of the LED; the reflective layer is cured, wherein The cured reflective layer has a hardness greater than one of the cured wavelength converting layers and an abrasion rate; and an upper portion of the cured reflective layer is removed to expose the LEDs.

相關申請案之交叉參考 本申請案主張2015年9月25日申請之標題為「SURFACE EMITTER WITH LIGHT-EMITTING AREA EQUAL TO THE LED TOP SURFACE」之同在申請中之美國臨時專利申請案第62/233,301號的優先權利,該案之全文特此以引用的方式併入本文中。 圖1係本發明之實例中之一上發射式發光二極體(LED)單元或封裝100之一側視橫截面視圖。LED單元100包含在一底表面上具有接觸件104之一LED 102、LED之側表面上之一反射器106,以及LED及反射器之上部上方之一波長轉換器108。應注意,術語「上方」之使用包含一元件直接在另一元件之上。LED 102係一個五面發射器。反射器106含有由LED 102之側壁發射之初級光,且其將該初級光重新引導至LED之上表面。波長轉換器108將初級光之部分轉換成一不同波長之一次級光,該次級光與初級光之其餘部分組合以產生一所要色彩。通常,將反射器106模製於LED 102周圍,且接著用波長轉換器108塗佈上表面。波長轉換器108可為具有一第一矽酮中磷光體層其後接著一第二矽酮中氧化鈦(TiOx)層之一積層。 LED單元100因光的部分(例如,10%)係沿波長轉換器108水平引導而係低效的。LED單元100亦因波長轉換器108延伸以覆蓋反射器106而係大的,此使LED單元之上發射區域遠大於LED 102之上表面。 圖2係本發明之實例中之一上發射式LED單元或封裝200之一側視橫截面視圖。LED單元200包含在底表面上具有接觸件104之LED 102、LED上方之一波長轉換器206、波長轉換器上方之一保護玻璃板208,以及LED、波長轉換器及玻璃板之側表面上之一反射器210。波長轉換器206將由LED 102發射之初級光之部分轉換成一不同波長之一次級光,該次級光與初級光之其餘部分組合以產生一所要色彩。反射器210含有由LED 102之側壁發射之光,且其將該光重新引導至LED之上表面。通常,波長轉換器206係形成於玻璃板208上方,且將此夾層附接至LED 102。波長轉換器206可為一磷光體陶瓷板或具有一第一矽酮中磷光體層其後接著一第二矽酮中TiOx層之一積層。接著,將反射器210模製於整個區域上方,且移除過量材料以敞開波長轉換器206之表面,該表面在移除過量材料期間受玻璃板208保護。 LED單元200因使用玻璃板208作為一保護層以防止在封裝製造期間對波長轉換器206之損害而係高的。 圖3係本發明之實例中之一LED單元或封裝300之一側視橫截面視圖。LED單元300包含在底表面上具有接觸件104之LED 102、LED上方之一波長轉換器306,以及LED及波長轉換器之側表面上之一反射器308。 LED 102可為一表面安裝裝置(SMD)。LED 102可具有50微米(µm)至400微米(µm)之一高度。 波長轉換器306形成LED單元300之發光區域。波長轉換器306可與LED 102之上表面精確重疊或延伸略微超出該上表面,藉此使LED單元300之上發射區域小於LED單元100之上發射區域(圖1)。超出LED 102之上表面之波長轉換器306的懸掛取決於如稍後描述之用來分離鄰近LED 102之單粒化機器的精度。在一些實例中,懸掛在自0 µm至50 µm之範圍內。波長轉換器306之側表面係由反射器308覆蓋,使得光無法水平穿過波長轉換器離開,藉此使LED單元300比LED單元100更有效率。 波長轉換器306可為具有一第一矽酮中磷光體層其後接著一第二矽酮中TiOx(例如,TiO2 )層之一積層,其中矽酮可為一彈性體或一樹脂。第一層可包括以重量計1%至80%之磷光體,且第二層可包括以重量計0.05%至10%之TiOx。第一矽酮中磷光體層可為35 µm至150 µm (例如,87 µm)厚,且第二矽酮中TiOx層可為約30 µm至90 µm (例如,50 µm)厚。代替TiOx,第二層可為矽酮中氧化鋯(ZrOx)。 藉由將一厚的反射材料層鋪放於LED 102上之波長轉換器306上方且自上表面移除過量材料以暴露波長轉換器而形成反射器308。反射材料具有大於波長轉換材料之一硬度,因此反射材料亦具有大於波長轉換材料之一磨蝕速率。藉由利用硬度及磨蝕速率之差異,可透過一噴砂製程移除過量反射材料而不損害波長轉換材料,藉此無需一保護玻璃板且使LED單元300比LED單元200 (圖2)更短。 反射材料可具有超過90%之一反射率。反射材料可具有大小為波長轉換材料之硬度之100倍之一硬度,且反射材料可具有大小為波長轉換材料之磨蝕速率之10倍之一磨蝕速率。例如,反射材料可為具有7吉帕(gigapascal,GPa)之一硬度之一矽酮模製化合物(SMC),而波長轉換材料可為具有60兆帕(megapascal,MPa)之一硬度之一積層(上文所述),且反射材料在30磅/平方英寸(psi)下可具有每遍次60 µm之一磨蝕速率,而波長轉換材料在30 psi下可具有每遍次0.05 µm之一磨蝕速率。SMC可包含約82%至87%之氧化矽(SiOx)及13%至18%之TiOx。或者,SMC可為SiOx及ZrO。 圖4係本發明之實例中之用來製造LED單元300之一方法400之一流程圖。方法400可以方塊402開始。 在方塊402中,如圖5-1之視圖506中所示,一波長轉換層502經形成於一支撐件504上。波長轉換層502可為具有一第一矽酮中TiOx層其後接著該第一層上方之一第二矽酮中磷光體層之一積層。支撐件504可為由一金屬邊框支撐之一黏性膠帶。再參考圖4,方塊402後可接著方塊404。 在方塊404中,如圖5-1之視圖508中所示,使LED 102 (僅標記一個)之上發射表面面向下且底接觸表面面向上而將該等LED取放於波長轉換層502上。LED 102可經加熱以黏著至波長轉換層502,或LED於附接期間可在室溫下,且可加熱波長轉換層502。再參考圖4,方塊404後可接著方塊406。 在方塊406中,波長轉換層502經固化以將LED 102之上發射表面黏著至波長轉換層。方塊406後可接著方塊408。 在方塊408中,如圖5-1之視圖510中所示,藉由在LED之間切割經固化波長轉換層502 (圖5-1中之視圖508)來單粒化LED 102。在單粒化之後,各LED 102具有超過其上發射表面之一波長轉換器306。如可見,波長轉換器306組成LED單元300之發光區域,該發光區域實質上與LED 102之上發射表面大小相同。再參考圖4,方塊408後可接著選用方塊410。 在選用方塊410中,如圖5-1之視圖514中所示,使LED 102之底接觸表面面向下且上發射表面面向上而將該等LED 102取放至一支撐件512之一黏著側上。LED 102可自支撐件504轉移至支撐件512。支撐件512可為一金屬框上之一黏性膠帶。再參考圖4,選用方塊410後可接著方塊412。 在方塊412,如圖5-1之視圖518中所示,一光學反射層516經形成於LED 102上方及中間。再參考圖4,方塊412後可接著方塊414。 在方塊414中,反射層516經固化以將LED 102黏著至反射層。經固化反射材料具有大於經固化波長轉換材料之一硬度及一磨蝕速率。方塊414後可接著方塊416。 在方塊416中,如圖5-1之視圖520中所示,反射層516 (圖5-1中之視圖518)之一上部經移除以暴露LED 102。例如,將反射層516之上部向下移除至波長轉換器306 (僅標記一個)之上部。可藉由噴砂來移除反射層516之上部。如可見,LED單元300不具有否則將增加單元之高度的任何保護玻璃板。再參考圖4,方塊416後可接著方塊418。 在方塊418中,如圖5-2之視圖522中所示,藉由在LED之間切割經固化反射層516’ (圖5-1中之視圖520)來將LED 102單粒化成具有反射器308之LED單元300。如可見,反射器308覆蓋波長轉換器306之側表面,以防止任何光沿波長轉換器側向逸出。再參考圖4,方塊418後可接著方塊420。 在方塊420中,如圖5-2之視圖524中所示,LED單元300 (僅標記一個)自支撐件512 (圖5-2中之視圖522)釋離。例如,LED單元300自支撐件512熱釋離。 圖6係本發明之實例中之用來製造LED單元300之一方法600之一流程圖。方法600可以方塊602開始。 在方塊602中,如圖7之視圖708中所示,波長轉換層502係形成於支撐件512上。再參考圖6,方塊602後可接著方塊604。 在方塊604中,如圖7之視圖708中所示,使LED 102 (僅標記一個)之上發射表面面向下且底接觸表面面向上而將該等LED 102取放於波長轉換層502上。LED 102可經加熱以黏著至波長轉換層502,或LED於附接期間可在室溫下,且可加熱波長轉換層502。再參考圖6,方塊604後可接著方塊606。 在方塊606中,波長轉換層502經固化以將LED 102之上發射表面黏著至波長轉換層。方塊606後可接著方塊608。 在方塊608中,如圖7之視圖710中所示,藉由在LED之間切割經固化波長轉換層502 (圖7中之視圖708)來單粒化LED 102。在單粒化之後,各LED 102在其上發射表面上方具有一波長轉換器306 (僅標記一個)。如可見,波長轉換器306組成LED單元300之發光區域,該發光區域實質上與LED 102之上發射表面大小相同。再參考圖6,方塊608後可接著選用方塊612。 在方塊612中,如圖7之視圖718中所示,光學反射層516形成於LED 102上方及中間。再參考圖6,方塊612後可接著方塊614。 在方塊614中,反射層516經固化以將LED 102黏著至反射層。經固化反射材料具有大於經固化波長轉換材料之一硬度及一磨蝕速率。方塊614後可接著方塊616。 在方塊616中,如圖7之視圖720中所示,反射層516 (圖7中之視圖718)之一上部經移除以暴露LED 102。例如,將反射層516之上部向下移除至LED 102之底接觸表面上之接觸件104 (僅標記兩個)。可藉由噴砂或拋光而移除反射層516之上部。如可見,LED單元300不具有否則將增加單元之高度之任何保護玻璃板。再參考圖6,方塊616後可接著方塊618。 在方塊618中,如圖7之視圖722中所示,藉由在LED之間切割經固化反射層516’ (圖7中之視圖720)而將LED 102單粒化成具有反射器308之LED單元300。如可見,反射器308覆蓋波長轉換器306之側表面以防止任何光沿波長轉換器側向逸出。再參考圖6,方塊618後可接著方塊620。 在方塊620中,LED單元300自支撐件512釋離。例如,LED單元300自支撐件512熱釋離。 所揭示之實施例之特徵之各種其他調適及組合在本發明之範疇內。以下申請專利範圍涵蓋許多實施例。CROSS-REFERENCE TO RELATED APPLICATIONS RELATED APPLICATIONS RELATED APPLICATIONS RELATED APPLICATIONS RELATED APPLICATIONS RELATED APPLICATIONS s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s The priority of the present application is hereby incorporated by reference in its entirety. 1 is a side cross-sectional view of one of an emissive light emitting diode (LED) unit or package 100 in one of the examples of the present invention. The LED unit 100 includes an LED 102 having a contact 104 on a bottom surface, a reflector 106 on a side surface of the LED, and a wavelength converter 108 above the LED and the upper portion of the reflector. It should be noted that the use of the term "above" includes one element directly above the other element. LED 102 is a five-sided transmitter. Reflector 106 contains primary light that is emitted by the sidewalls of LEDs 102 and that redirects the primary light to the upper surface of the LEDs. Wavelength converter 108 converts portions of the primary light into secondary light of a different wavelength that is combined with the remainder of the primary light to produce a desired color. Typically, reflector 106 is molded around LED 102 and the upper surface is then coated with wavelength converter 108. The wavelength converter 108 can be a layer having a phosphor layer in a first fluorenone followed by a layer of titanium oxide (TiOx) in a second fluorenone. The LED unit 100 is inefficient due to the fact that a portion of the light (e.g., 10%) is horizontally guided along the wavelength converter 108. The LED unit 100 is also large due to the extension of the wavelength converter 108 to cover the reflector 106, which causes the emission area above the LED unit to be much larger than the upper surface of the LED 102. 2 is a side cross-sectional view of one of the emissive LED units or packages 200 in one of the examples of the present invention. The LED unit 200 includes an LED 102 having a contact 104 on a bottom surface, a wavelength converter 206 above the LED, a protective glass plate 208 above the wavelength converter, and side surfaces of the LED, the wavelength converter, and the glass plate. A reflector 210. Wavelength converter 206 converts the portion of the primary light emitted by LED 102 into secondary light of a different wavelength that is combined with the remainder of the primary light to produce a desired color. Reflector 210 contains light emitted by the sidewalls of LEDs 102 and redirects the light to the upper surface of the LEDs. Typically, a wavelength converter 206 is formed over the glass sheet 208 and this interlayer is attached to the LEDs 102. The wavelength converter 206 can be a phosphor ceramic plate or have a phosphor layer in a first fluorenone followed by a layer of a TiOx layer in a second fluorenone. Next, the reflector 210 is molded over the entire area and excess material is removed to open the surface of the wavelength converter 206, which is protected by the glass sheet 208 during removal of excess material. The LED unit 200 is high due to the use of the glass plate 208 as a protective layer to prevent damage to the wavelength converter 206 during package manufacture. 3 is a side cross-sectional view of one of the LED units or packages 300 in an example of the present invention. The LED unit 300 includes an LED 102 having a contact 104 on a bottom surface, a wavelength converter 306 above the LED, and a reflector 308 on the side surface of the LED and the wavelength converter. LED 102 can be a surface mount device (SMD). The LED 102 can have a height from 50 micrometers (μm) to 400 micrometers (μm). The wavelength converter 306 forms a light emitting region of the LED unit 300. The wavelength converter 306 can precisely overlap or extend slightly beyond the upper surface of the LED 102, thereby causing the emission area above the LED unit 300 to be smaller than the emission area above the LED unit 100 (Fig. 1). The suspension of the wavelength converter 306 beyond the upper surface of the LED 102 depends on the accuracy of the single granulation machine used to separate the adjacent LEDs 102 as described later. In some examples, the suspension is in the range of from 0 μm to 50 μm. The side surface of the wavelength converter 306 is covered by the reflector 308 such that light cannot exit horizontally through the wavelength converter, thereby making the LED unit 300 more efficient than the LED unit 100. The wavelength converter 306 can be a layer having a phosphor layer in a first fluorenone followed by a layer of TiOx (e.g., TiO 2 ) in a second fluorenone, wherein the fluorenone can be an elastomer or a resin. The first layer may include from 1% to 80% by weight of the phosphor, and the second layer may include from 0.05% to 10% by weight of TiOx. The phosphor layer in the first fluorenone may be 35 μm to 150 μm (for example, 87 μm) thick, and the TiOx layer in the second fluorenone may be about 30 μm to 90 μm (for example, 50 μm) thick. Instead of TiOx, the second layer may be zirconia (ZrOx) in an anthrone. Reflector 308 is formed by depositing a thick layer of reflective material over wavelength converter 306 on LED 102 and removing excess material from the upper surface to expose the wavelength converter. The reflective material has a hardness greater than one of the wavelength converting materials, and thus the reflective material also has an abrasion rate that is greater than one of the wavelength converting materials. By utilizing the difference in hardness and abrasion rate, excess reflective material can be removed through a sandblasting process without damaging the wavelength converting material, thereby eliminating the need for a protective glass sheet and making LED unit 300 shorter than LED unit 200 (FIG. 2). The reflective material can have a reflectivity of more than 90%. The reflective material can have a hardness that is one hundred times the hardness of the wavelength converting material, and the reflective material can have an abrasion rate that is one ten times the abrasion rate of the wavelength converting material. For example, the reflective material may be one of a ketone molding compound (SMC) having a hardness of 7 gigapascal (GPa), and the wavelength converting material may be a laminate having a hardness of 60 megapascal (MPa). (described above), and the reflective material can have an abrasion rate of 60 μm per pass at 30 psi, while the wavelength converting material can have an abrasion of 0.05 μm per pass at 30 psi. rate. The SMC may comprise from about 82% to 87% yttrium oxide (SiOx) and from 13% to 18% TiOx. Alternatively, the SMC can be SiOx and ZrO. 4 is a flow diagram of a method 400 for fabricating an LED unit 300 in an example of the present invention. Method 400 can begin at block 402. In block 402, a wavelength conversion layer 502 is formed on a support member 504 as shown in view 506 of FIG. The wavelength converting layer 502 can be a layer having one of the first fluorenone TiOx layer followed by one of the phosphor layers in the second fluorenone above the first layer. The support member 504 can be an adhesive tape supported by a metal frame. Referring again to FIG. 4, block 402 may be followed by block 404. In block 404, as shown in view 508 of FIG. 5-1, the LEDs 102 (labeled only one) are placed with the emission surface facing down and the bottom contact surface facing up while the LEDs are placed on the wavelength conversion layer 502. . The LEDs 102 can be heated to adhere to the wavelength conversion layer 502, or the LEDs can be at room temperature during attachment, and the wavelength conversion layer 502 can be heated. Referring again to FIG. 4, block 404 may be followed by block 406. In block 406, the wavelength conversion layer 502 is cured to adhere the emissive surface above the LED 102 to the wavelength conversion layer. Block 406 may be followed by block 408. In block 408, as shown in view 510 of Figure 5-1, the LEDs 102 are singulated by cutting the cured wavelength converting layer 502 (view 508 in Figure 5-1) between the LEDs. After singulation, each LED 102 has a wavelength converter 306 that exceeds one of its upper emitting surfaces. As can be seen, the wavelength converter 306 constitutes a light emitting region of the LED unit 300 that is substantially the same size as the emitting surface above the LED 102. Referring again to FIG. 4, block 408 may be followed by block 410. In option block 410, as shown in view 514 of Figure 5-1, the bottom contact surface of the LED 102 faces downward and the upper emission surface faces up and the LEDs 102 are brought to the adhesive side of a support member 512. on. The LEDs 102 can be transferred from the support 504 to the support 512. The support member 512 can be an adhesive tape on a metal frame. Referring again to FIG. 4, block 410 is selected and block 412 is followed. At block 412, an optically reflective layer 516 is formed over and in the middle of LED 102, as shown in view 518 of FIG. Referring again to FIG. 4, block 412 may be followed by block 414. In block 414, the reflective layer 516 is cured to adhere the LEDs 102 to the reflective layer. The cured reflective material has a hardness greater than one of the cured wavelength converting materials and an abrasion rate. Block 414 may be followed by block 416. In block 416, as shown in view 520 of FIG. 5-1, an upper portion of reflective layer 516 (view 518 in FIG. 5-1) is removed to expose LEDs 102. For example, the upper portion of the reflective layer 516 is removed downward to the upper portion of the wavelength converter 306 (only one is labeled). The upper portion of the reflective layer 516 can be removed by sand blasting. As can be seen, the LED unit 300 does not have any protective glass sheets that would otherwise increase the height of the unit. Referring again to FIG. 4, block 416 may be followed by block 418. In block 418, as shown in view 522 of Figure 5-2, the LED 102 is singulated to have a reflector by cutting the cured reflective layer 516' (view 520 in Figure 5-1) between the LEDs. LED unit 300 of 308. As can be seen, the reflector 308 covers the side surface of the wavelength converter 306 to prevent any light from escaping laterally along the wavelength converter. Referring again to FIG. 4, block 418 may be followed by block 420. In block 420, as shown in view 524 of Figure 5-2, LED unit 300 (labeled only one) is disengaged from support 512 (view 522 in Figure 5-2). For example, the LED unit 300 is thermally released from the support 512. 6 is a flow diagram of a method 600 for fabricating an LED unit 300 in an example of the present invention. Method 600 can begin at block 602. In block 602, as shown in view 708 of FIG. 7, wavelength conversion layer 502 is formed on support 512. Referring again to FIG. 6, block 602 may be followed by block 604. In block 604, as shown in view 708 of FIG. 7, the LEDs 102 (marked only one) are placed with the emission surface facing down and the bottom contact surface facing up and the LEDs 102 are placed on the wavelength conversion layer 502. The LEDs 102 can be heated to adhere to the wavelength conversion layer 502, or the LEDs can be at room temperature during attachment, and the wavelength conversion layer 502 can be heated. Referring again to FIG. 6, block 604 may be followed by block 606. In block 606, the wavelength conversion layer 502 is cured to adhere the emissive surface above the LED 102 to the wavelength conversion layer. Block 606 may be followed by block 608. In block 608, LED 102 is singulated by cutting the cured wavelength converting layer 502 (view 708 in FIG. 7) between the LEDs as shown in view 710 of FIG. After singulation, each LED 102 has a wavelength converter 306 (marked only one) above its upper emitting surface. As can be seen, the wavelength converter 306 constitutes a light emitting region of the LED unit 300 that is substantially the same size as the emitting surface above the LED 102. Referring again to FIG. 6, block 608 may be followed by block 612. In block 612, as shown in view 718 of FIG. 7, an optically reflective layer 516 is formed over and in the middle of the LEDs 102. Referring again to FIG. 6, block 612 may be followed by block 614. In block 614, the reflective layer 516 is cured to adhere the LEDs 102 to the reflective layer. The cured reflective material has a hardness greater than one of the cured wavelength converting materials and an abrasion rate. Block 614 may be followed by block 616. In block 616, as shown in view 720 of FIG. 7, one of the upper portions of reflective layer 516 (view 718 in FIG. 7) is removed to expose LEDs 102. For example, the upper portion of the reflective layer 516 is removed down to the contacts 104 on the bottom contact surface of the LED 102 (only two are labeled). The upper portion of the reflective layer 516 can be removed by sandblasting or polishing. As can be seen, the LED unit 300 does not have any protective glass sheets that would otherwise increase the height of the unit. Referring again to FIG. 6, block 616 may be followed by block 618. In block 618, as shown in view 722 of FIG. 7, LED 102 is singulated into LED units having reflectors 308 by cutting cured reflective layer 516' (view 720 in FIG. 7) between the LEDs. 300. As can be seen, the reflector 308 covers the side surface of the wavelength converter 306 to prevent any light from escaping laterally along the wavelength converter. Referring again to FIG. 6, block 618 may be followed by block 620. In block 620, the LED unit 300 is released from the support 512. For example, the LED unit 300 is thermally released from the support 512. Various other adaptations and combinations of the features of the disclosed embodiments are within the scope of the invention. The scope of the following patent application covers many embodiments.

100‧‧‧發光二極體(LED)單元/封裝
102‧‧‧發光二極體(LED)
104‧‧‧接觸件
106‧‧‧反射器
108‧‧‧波長轉換器
200‧‧‧發光二極體(LED)單元/封裝
206‧‧‧波長轉換器
208‧‧‧保護玻璃板
210‧‧‧反射器
300‧‧‧發光二極體(LED)單元/封裝
306‧‧‧波長轉換器
308‧‧‧反射器
400‧‧‧方法
402‧‧‧方塊
404‧‧‧方塊
406‧‧‧方塊
408‧‧‧方塊
410‧‧‧方塊
412‧‧‧方塊
414‧‧‧方塊
416‧‧‧方塊
418‧‧‧方塊
420‧‧‧方塊
502‧‧‧波長轉換層
504‧‧‧支撐件
506‧‧‧視圖
508‧‧‧視圖
510‧‧‧視圖
512‧‧‧支撐件
514‧‧‧視圖
516‧‧‧光學反射層
516’‧‧‧經固化反射層
518‧‧‧視圖
520‧‧‧視圖
522‧‧‧視圖
524‧‧‧視圖
600‧‧‧方法
602‧‧‧方塊
604‧‧‧方塊
606‧‧‧方塊
608‧‧‧方塊
612‧‧‧方塊
614‧‧‧方塊
616‧‧‧方塊
618‧‧‧方塊
620‧‧‧方塊
708‧‧‧視圖
710‧‧‧視圖
718‧‧‧視圖
720‧‧‧視圖
722‧‧‧視圖
100‧‧‧Light Emitting Diode (LED) Units / Packages
102‧‧‧Lighting diode (LED)
104‧‧‧Contacts
106‧‧‧ reflector
108‧‧‧wavelength converter
200‧‧‧Light Emitting Diode (LED) Units / Packages
206‧‧‧wavelength converter
208‧‧‧protective glass
210‧‧‧ reflector
300‧‧‧Light Emitting Diode (LED) Unit / Package
306‧‧‧wavelength converter
308‧‧‧ reflector
400‧‧‧ method
402‧‧‧ square
404‧‧‧ square
406‧‧‧ square
408‧‧‧ squares
410‧‧‧ square
412‧‧‧ square
414‧‧‧ squares
416‧‧‧ square
418‧‧‧ square
420‧‧‧ square
502‧‧‧wavelength conversion layer
504‧‧‧Support
506‧‧‧ view
508‧‧‧ view
510‧‧ view
512‧‧‧Support
514‧‧‧ view
516‧‧‧Optical reflective layer
516'‧‧‧cured reflective layer
518‧‧‧ view
520‧‧‧ view
522‧‧‧ view
524‧‧‧ view
600‧‧‧ method
602‧‧‧ square
604‧‧‧ square
606‧‧‧ square
608‧‧‧ square
612‧‧‧ square
614‧‧‧ square
616‧‧‧ squares
618‧‧‧ square
620‧‧‧ square
708‧‧ view
710‧‧ view
718‧‧ view
720‧‧‧ view
722‧‧‧ view

在圖式中: 圖1係本發明之實例中之具有一波長轉換器之一上發射式LED單元或封裝之一側視橫截面視圖,該波長轉換器延伸至該單元之邊緣; 圖2係本發明之實例中之在一波長轉換器上方具有一保護玻璃板之一上發射式LED單元或封裝之一側視橫截面視圖; 圖3係本發明之實例中之具有與一LED上表面等大小之一發光區域之一上發射式LED單元或封裝之一側視橫截面視圖; 圖4係本發明之實例中之用來製造圖3之LED單元之一方法之一流程圖; 圖5-1及圖5-2繪示本發明之實例中之使用圖4之方法來製造圖3之LED單元之一製程之側視橫截面視圖; 圖6係本發明之實例中之用來製造圖3之LED單元之一方法之一流程圖;及 圖7繪示本發明之實例中之使用圖6之方法來製造圖3之LED單元之一製程之側視橫截面視圖。 在不同圖中使用相同元件符號來指示類似或相同元件。In the drawings: Figure 1 is a side cross-sectional view of an emissive LED unit or package having one of a wavelength converter in an example of the present invention, the wavelength converter extending to the edge of the unit; A side cross-sectional view of an emissive LED unit or package having one of the protective glass sheets above a wavelength converter in an example of the present invention; FIG. 3 is an example of the present invention having an upper surface with an LED, etc. A side cross-sectional view of one of the emissive LED units or packages on one of the illuminating regions of size; FIG. 4 is a flow diagram of one of the methods used to fabricate the LED unit of FIG. 3 in an example of the present invention; 1 and FIG. 5-2 are side cross-sectional views showing a process of manufacturing the LED unit of FIG. 3 using the method of FIG. 4 in the example of the present invention; FIG. 6 is used to manufacture FIG. 3 in the example of the present invention. A flow chart of one of the methods of the LED unit; and FIG. 7 is a side cross-sectional view showing a process of manufacturing the LED unit of FIG. 3 using the method of FIG. 6 in an example of the present invention. The same element symbols are used in the different figures to indicate similar or identical elements.

102‧‧‧發光二極體(LED) 102‧‧‧Lighting diode (LED)

104‧‧‧接觸件 104‧‧‧Contacts

300‧‧‧發光二極體(LED)單元/封裝 300‧‧‧Light Emitting Diode (LED) Unit / Package

306‧‧‧波長轉換器 306‧‧‧wavelength converter

308‧‧‧反射器 308‧‧‧ reflector

Claims (14)

一種方法,其包括: 在一支撐件上形成一波長轉換層; 使發光二極體(LED)之上發射表面面向下且底接觸表面面向上而將該等LED放置於該波長轉換層上; 固化該波長轉換層以將其黏著至該等LED之該等上發射表面; 藉由在該等LED之間切割該經固化波長轉換層來單粒化該等LED,其中在該單粒化之後,各LED具有與該LED之一上發射表面精確重疊或延伸略微超出該上發射表面之一波長轉換器; 在該等LED上方及中間形成一光學反射層; 固化該反射層;及 移除該經固化反射層之一上部,以暴露該等LED。A method comprising: forming a wavelength conversion layer on a support member; placing an emission surface of the light emitting diode (LED) face down and a bottom contact surface facing upward and placing the LEDs on the wavelength conversion layer; Curing the wavelength conversion layer to adhere it to the upper emission surfaces of the LEDs; singulating the LEDs by cutting the cured wavelength conversion layer between the LEDs, wherein after the singulation Each LED has a wavelength converter that precisely overlaps or extends slightly beyond the emission surface of the LED; an optical reflective layer is formed over and in the middle of the LED; the reflective layer is cured; and the An upper portion of the reflective layer is cured to expose the LEDs. 如請求項1之方法,進一步包括,在單粒化該等LED之後及在形成該光學反射層之前: 使該等LED之該等底接觸表面面向下而將該等LED放置至另一支撐件上,其中移除該經固化反射層之該上部包括:將該經固化反射層向下移除至該等上發射表面上之波長轉換器。The method of claim 1, further comprising, after singulating the LEDs and before forming the optical reflective layer: placing the bottom contact surfaces of the LEDs facing down and placing the LEDs to another support member The removing the upper portion of the cured reflective layer includes: removing the cured reflective layer downward to the wavelength converters on the upper emitting surfaces. 如請求項1之方法,其中移除該經固化反射層之該上部包括:將該經固化反射層向下移除至該等底接觸表面上之接觸件。The method of claim 1, wherein removing the upper portion of the cured reflective layer comprises: removing the cured reflective layer down to contacts on the bottom contact surfaces. 如請求項2或3之方法,進一步包括,在該移除該經固化反射層之該上部之後: 藉由在該等LED之間切割該經固化反射層來將該等LED單粒化成LED單元,其中各LED單元在其之波長轉換器及LED之側表面上具有一反射器。The method of claim 2 or 3, further comprising, after the removing the upper portion of the cured reflective layer: singulating the LEDs into LED units by cutting the cured reflective layer between the LEDs Each of the LED units has a reflector on its side surface of the wavelength converter and the LED. 如請求項4之方法,進一步包括:在將該等LED單粒化成LED單元之後,自該第二支撐件釋離該等LED單元。The method of claim 4, further comprising: releasing the LED units from the second support after singulating the LEDs into LED units. 如請求項2或3之方法,其中該經固化反射層具有大於該經固化波長轉換層之一硬度及一磨蝕速率。The method of claim 2 or 3, wherein the cured reflective layer has a hardness greater than a hardness of the cured wavelength conversion layer and an abrasion rate. 如請求項6之方法,其中移除該經固化反射層之該上部包括:噴砂或拋光該反射層。The method of claim 6, wherein removing the upper portion of the cured reflective layer comprises: sandblasting or polishing the reflective layer. 如請求項1之方法,其中該波長轉換層包括包含一第一矽酮中磷光體層及一第二矽酮中氧化鈦層之一積層。The method of claim 1, wherein the wavelength conversion layer comprises a laminate comprising a phosphor layer in the first fluorenone and a titanium oxide layer in the second fluorenone. 如請求項1之方法,其中該反射層包括矽酮中氧化鈦。The method of claim 1, wherein the reflective layer comprises titanium oxide in an anthrone. 如請求項1之方法,其中該波長轉換器懸於LED之該上發射表面上方0微米至50微米。The method of claim 1, wherein the wavelength converter is suspended from 0 micrometers to 50 micrometers above the upper emitting surface of the LED. 一種發光二極體(LED)單元,其包括: 一LED,其具有一上發射表面; 一波長轉換器,其與該上發射表面精確重疊或延伸略微超出該上發射表面;及 一反射器,其圍繞該波長轉換器及該LED之側表面,其中該反射器包括高於該波長轉換器之一硬度及一磨蝕速率。A light emitting diode (LED) unit comprising: an LED having an upper emitting surface; a wavelength converter that precisely overlaps or extends slightly beyond the upper emitting surface; and a reflector, It surrounds the wavelength converter and a side surface of the LED, wherein the reflector includes a hardness and an abrasion rate higher than one of the wavelength converters. 如請求項11之LED單元,其中該波長轉換層包括包含一第一矽酮中磷光體層及該第一層上方之一第二矽酮中氧化鈦層之一積層。The LED unit of claim 11, wherein the wavelength conversion layer comprises a layer comprising a phosphor layer in a first fluorenone and a titanium oxide layer in a second fluorenone above the first layer. 如請求項11之LED單元,其中該反射器包括矽酮中氧化鈦。The LED unit of claim 11, wherein the reflector comprises titanium oxide in an anthrone. 如請求項11之LED單元,其中該波長轉換器懸於該LED之該上發射表面上方0微米至50微米。The LED unit of claim 11, wherein the wavelength converter is suspended from 0 micrometers to 50 micrometers above the upper emitting surface of the LED.
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