TW201716944A - Shift register - Google Patents
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- TW201716944A TW201716944A TW104136346A TW104136346A TW201716944A TW 201716944 A TW201716944 A TW 201716944A TW 104136346 A TW104136346 A TW 104136346A TW 104136346 A TW104136346 A TW 104136346A TW 201716944 A TW201716944 A TW 201716944A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
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Abstract
Description
本發明係關於一種移位暫存器,特別是一種應用於內嵌式觸控面板的移位暫存器。The present invention relates to a shift register, and more particularly to a shift register for an in-cell touch panel.
基於降低製造成本及窄邊框效果的考量,現今面板廠逐漸開始採用陣列上閘極驅動電路(GOA,gate driver on array)技術。GOA技術係利用半導體製程將移位暫存電路直接製作在面板的玻璃基板上,並利用多個串接的移位暫存器依序地輸出多個閘極驅動信號,以驅動面板的像素陣列。Based on the consideration of reducing manufacturing cost and narrow frame effect, today's panel manufacturers are gradually adopting the gate driver on array (GOA) technology. The GOA technology uses a semiconductor process to directly fabricate the shift register circuit on the glass substrate of the panel, and sequentially outputs a plurality of gate drive signals by using a plurality of serially connected shift registers to drive the pixel array of the panel. .
而對於內嵌式(in-cell)觸控面板來說,內嵌式觸控面板在同一塊基板上同時設置有閘極驅動電路以及觸控電路,顯然閘極驅動電路與觸控電路當會造成彼此某種程度上的干擾。由於閘極驅動信號的強度較強,經由結構上的電容耦合效應,閘極驅動信號往往會形成雜訊而干擾觸控偵測訊號。在更糟的情況中,觸控偵測訊號還會被閘極驅動信號所干擾而產生誤判。For an in-cell touch panel, the in-cell touch panel is provided with a gate driving circuit and a touch circuit on the same substrate. Obviously, the gate driving circuit and the touch circuit will be Cause some degree of interference with each other. Due to the strong intensity of the gate drive signal, the gate drive signal often forms noise and interferes with the touch detection signal via the capacitive coupling effect of the structure. In a worse case, the touch detection signal is also interfered by the gate drive signal and misjudges.
而為了避免這樣的情況發生,一般來說會在致能觸控電路時,將移位暫存器中的幾個特定信號拉低至低準位,以避免閘極驅動電路與觸控電路彼此干擾。但於此同時,如何讓閘極驅動電路於觸控電路被致能的此期間過後能快速地重新正常運作,則成為工程師在設計移位暫存器時的一大課題。In order to avoid such a situation, generally, when the touch circuit is enabled, several specific signals in the shift register are pulled down to a low level to avoid the gate driving circuit and the touch circuit from each other. interference. At the same time, however, how to enable the gate drive circuit to resume normal operation after the touch circuit is enabled can become a major issue for engineers in designing the shift register.
本發明在於提供一種移位暫存器,在拉低移位暫存器的多個信號時也能讓移位暫存器中的特定節點維持所欲的電壓,從而讓移位暫存器在觸控電路被致能的此期間過後,能快速地重新正常運作。The present invention provides a shift register capable of maintaining a desired voltage of a specific node in a shift register while pulling down a plurality of signals of the shift register, thereby allowing the shift register to be After this period of time when the touch circuit is enabled, it can quickly resume normal operation.
本發明所揭露的一種移位暫存器,適於內嵌於一種觸控螢幕。移位暫存器包含移位邏輯電路、第一反相器、第一開關、第二反相器與重置電路。第一反相器耦接移位邏輯電路。第一開關耦接第一反相器。第二反相器耦接第一反相器。重置電路耦接該第二反相器。移位邏輯電路依據時脈信號、輸入信號與箝制信號產生移位信號。第一反相器依據移位信號產生箝制信號。第一開關依據觸控致能信號將箝制信號的電位調整至第一參考電壓。第二反相器用以於被致能時產生對應於箝制信號的輸出信號。重置電路依據觸控致能信號,調整輸出信號的電位至第一參考電壓。。A shift register disclosed in the present invention is suitable for being embedded in a touch screen. The shift register includes a shift logic circuit, a first inverter, a first switch, a second inverter, and a reset circuit. The first inverter is coupled to the shift logic circuit. The first switch is coupled to the first inverter. The second inverter is coupled to the first inverter. A reset circuit is coupled to the second inverter. The shift logic circuit generates a shift signal according to the clock signal, the input signal, and the clamp signal. The first inverter generates a clamp signal in accordance with the shift signal. The first switch adjusts the potential of the clamp signal to the first reference voltage according to the touch enable signal. The second inverter is configured to generate an output signal corresponding to the clamp signal when enabled. The reset circuit adjusts the potential of the output signal to the first reference voltage according to the touch enable signal. .
綜上所述,本發明揭露了一種移位暫存器,藉由適時地對移位暫存器中的至少一個反相器的輸出節點或輸入節點進行充放電,以在拉低移位暫存器的多個輸入信號或輸出信號時也能讓所述的反相器的輸出或輸入節點維持所欲的電壓,從而讓移位暫存器在觸控電路被致能的此期間過後,能快速地重新正常運作In summary, the present invention discloses a shift register for charging and discharging an output node or an input node of at least one inverter in a shift register in a timely manner to lower the shift temporarily. The plurality of input signals or output signals of the memory can also maintain the desired voltage of the output or input node of the inverter, so that the shift register is after the touch circuit is enabled. Can quickly resume normal operation
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。The above description of the disclosure and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention, and to provide further explanation of the scope of the invention.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.
請參照圖1,圖1係為根據本發明一實施例所繪示之閘極驅動電路的功能方塊示意圖。閘極驅動電路1具有移位暫存器10_1~10_4,移位暫存器10_1~10_4依序串接。以移位暫存器10_1、10_2為例來說,移位暫存器10_1係依據時脈信號CK(1)產生閘極驅動信號SR(1)。而移位暫存器10_1、10_2係依據時脈信號CK(2)與閘極驅動信號SR(1)產生閘極驅動信號SR(1)。至於移位暫存器10_3、10_4的相關作動當可從上述內容以此類推,於此不再重複贅述。為求敘述簡明,在圖1中僅繪示有移位暫存器10_1~10_4以進行說明,但在此並不對閘極驅動電路1所能具有的移位暫存器數量加以限制。以下係以移位暫存器10_3進行其結構上的說明,而移位暫存器10_1~10_2、10_4的結構與移位暫存器10_3相仿,故於此不予贅述。Please refer to FIG. 1. FIG. 1 is a functional block diagram of a gate driving circuit according to an embodiment of the invention. The gate driving circuit 1 has shift registers 10_1~10_4, and the shift registers 10_1~10_4 are sequentially connected in series. Taking the shift registers 10_1, 10_2 as an example, the shift register 10_1 generates a gate drive signal SR(1) according to the clock signal CK(1). The shift registers 10_1, 10_2 generate the gate drive signal SR(1) according to the clock signal CK(2) and the gate drive signal SR(1). The related actions of the shift registers 10_3, 10_4 can be deduced from the above, and the details are not repeated here. For the sake of simplicity of description, only the shift registers 10_1~10_4 are illustrated in FIG. 1, but the number of shift registers that the gate drive circuit 1 can have is not limited here. The following is a description of the structure of the shift register 10_3, and the structure of the shift registers 10_1~10_2, 10_4 is similar to that of the shift register 10_3, and thus will not be described herein.
請接著參照圖2,圖2係為根據本發明一實施例所繪示之移位暫存器的電路示意圖。移位暫存器10_3適於內嵌於一種觸控螢幕。移位暫存器10_3包含移位邏輯電路102、第一反相器104、第一開關106、第二反相器108與重置電路110。第一反相器104電性連接移位邏輯電路102。第一開關106電性連接第一反相器104。第二反相器108電性耦接至第一反相器104。重置電路110電性連接至第二反相器108。在此實施例中,重置電路110係為電晶體T21。而第一反相器104包含上拉開關T11與下拉開關T12。事實上,圖2所繪示之移位暫存器10_3僅為舉例示範,各模組或單元並不僅侷限於圖2所繪示的實施態樣,凡於類似時序中具有相仿功能者,皆屬本案之範疇。Referring to FIG. 2, FIG. 2 is a schematic circuit diagram of a shift register according to an embodiment of the invention. The shift register 10_3 is adapted to be embedded in a touch screen. The shift register 10_3 includes a shift logic circuit 102, a first inverter 104, a first switch 106, a second inverter 108, and a reset circuit 110. The first inverter 104 is electrically connected to the shift logic circuit 102. The first switch 106 is electrically connected to the first inverter 104. The second inverter 108 is electrically coupled to the first inverter 104 . The reset circuit 110 is electrically connected to the second inverter 108. In this embodiment, the reset circuit 110 is a transistor T21. The first inverter 104 includes a pull-up switch T11 and a pull-down switch T12. In fact, the shift register 10_3 shown in FIG. 2 is merely an example, and each module or unit is not limited to the embodiment shown in FIG. 2, and all of them have similar functions in similar timings. It belongs to the scope of this case.
移位邏輯電路102依據時脈信號CK(3)、輸入信號與箝制信號K(3)產生移位信號G(3)。在此實施例中,輸入信號係為閘極驅動信號SR(2),但並不以此為限。第一反相器104依據移位信號G(3)產生箝制信號K(3)。第一開關106依據觸控致能信號TP_EN將箝制信號K(3)的電位調整至第一參考電壓XDONB。第二反相器108用以於被致能時產生對應於箝制信號K(3)的輸出信號。重置電路110依據觸控致能信號TP_EN,調整閘極驅動信號SR(3)的電位至第一參考電壓XDONB。The shift logic circuit 102 generates a shift signal G(3) according to the clock signal CK(3), the input signal, and the clamp signal K(3). In this embodiment, the input signal is the gate drive signal SR(2), but is not limited thereto. The first inverter 104 generates the clamp signal K(3) in accordance with the shift signal G(3). The first switch 106 adjusts the potential of the clamp signal K(3) to the first reference voltage XDONB according to the touch enable signal TP_EN. The second inverter 108 is configured to generate an output signal corresponding to the clamp signal K(3) when enabled. The reset circuit 110 adjusts the potential of the gate drive signal SR(3) to the first reference voltage XDONB according to the touch enable signal TP_EN.
更詳細地來說,當閘極驅動電路1正常運作時,閘極驅動信號SR(1)~SR(4)的電壓準位會依序被拉高至高電位。以移位暫存器10_2、10_3來說,移位暫存器10_2係先將閘極驅動信號SR(2)的電壓準位拉高至一暫態電位,電晶體T1、T2因而導通,控制信號Q(3)的電壓準位因而被拉高,然後電晶體T8因為電位升高後的控制信號Q(3)而導通。In more detail, when the gate driving circuit 1 operates normally, the voltage levels of the gate driving signals SR(1) to SR(4) are sequentially pulled high to a high potential. In the case of the shift register 10_2, 10_3, the shift register 10_2 first raises the voltage level of the gate drive signal SR(2) to a transient potential, and the transistors T1 and T2 are turned on, and the control is performed. The voltage level of the signal Q(3) is thus pulled high, and then the transistor T8 is turned on because of the control signal Q(3) after the potential rises.
接著,閘極驅動信號SR(2)被拉低至低電位,電晶體T1、T2不導通。此時,時脈信號CK(3)轉變為高電位,電晶體T8還是維持導通狀態。移位信號G(3)經由電晶體T8的導通路徑與電晶體T9的短路路徑而隨著時脈信號CK(3)被拉高至高電位。由於電路接線方式,電晶體T9亦可被當作電容使用,因此當移位信號G(3)隨著時脈信號CK(3)被拉高時,由於電晶體T9的電容耦合效應,控制信號Q(3)被連帶地推得更高,而使移位信號G(3)再被拉高至如圖3所示的電位。然後,移位信號G(3)係經由第一反相器104反相成箝制信號K(3),箝制信號K(3)再被第二反相器108反相成閘極驅動信號SR(3)並輸出。而當時脈信號CK(3)由高電位被拉低為低電位時,閘極驅動信號SR(3)亦連帶地被拉低為低電位。其中,第一開關106受控於觸控致能信號TP_EN而導通的導通阻抗小於上拉開關T11受控於移位信號G(3)而導通的導通阻抗。Next, the gate drive signal SR(2) is pulled low to a low potential, and the transistors T1, T2 are not turned on. At this time, the clock signal CK(3) is turned to a high potential, and the transistor T8 is maintained in an on state. The shift signal G(3) is pulled high to a high potential with the clock signal CK(3) via the conduction path of the transistor T8 and the short-circuit path of the transistor T9. Due to the circuit wiring mode, the transistor T9 can also be used as a capacitor. Therefore, when the shift signal G(3) is pulled high with the clock signal CK(3), the control signal is due to the capacitive coupling effect of the transistor T9. Q(3) is pushed higher in conjunction, and the shift signal G(3) is pulled high again to the potential shown in FIG. Then, the shift signal G(3) is inverted to the clamp signal K(3) via the first inverter 104, and the clamp signal K(3) is further inverted by the second inverter 108 into the gate drive signal SR ( 3) and output. When the pulse signal CK(3) is pulled low to a low level, the gate drive signal SR(3) is also pulled down to a low potential. The on-resistance of the first switch 106 controlled by the touch enable signal TP_EN is lower than the on-resistance of the pull-up switch T11 controlled by the shift signal G(3).
而如圖2所示,移位暫存器10_3還具有致能開關112。致能開關112電性連接至第二反相器108,且依據閘極驅動信號SR(2)選擇性地致能第二反相器108。在此實施例中,致能開關112為P型金屬氧化物半導體場效電晶體,其控制端接收閘極驅動信號SR(2)。當閘極驅動信號SR(2)為低電壓準位時,致能開關112被導通而致能第二反相器108。As shown in FIG. 2, the shift register 10_3 also has an enable switch 112. The enable switch 112 is electrically coupled to the second inverter 108 and selectively enables the second inverter 108 in accordance with the gate drive signal SR(2). In this embodiment, the enable switch 112 is a P-type metal oxide semiconductor field effect transistor, and its control terminal receives the gate drive signal SR(2). When the gate drive signal SR(2) is at a low voltage level, the enable switch 112 is turned on to enable the second inverter 108.
當內嵌式觸控面板的觸控電路欲進行觸控掃描時,時脈信號CK(3)、第一參考電壓XDONB與第二參考電壓VGH都被拉低至低電位,以使閘極驅動電路1暫停一段時間,觸控電路則在此段時間中進行觸控掃描。請一併參照第3圖以說明移位暫存器10_3在觸控顯示面板進行觸控掃描時的作動方式,圖3係為根據本發明圖2所繪示之移位暫存器的時序示意圖。When the touch circuit of the in-cell touch panel is to perform touch scanning, the clock signal CK(3), the first reference voltage XDONB and the second reference voltage VGH are pulled down to a low level to drive the gate. The circuit 1 is paused for a period of time, and the touch circuit performs touch scanning during this period of time. Please refer to FIG. 3 to illustrate the operation mode of the shift register 10_3 when the touch display panel performs touch scanning, and FIG. 3 is a timing diagram of the shift register according to FIG. 2 of the present invention. .
如圖3所示,在時間點t1之前,閘極驅動電路1正常地運作,因此控制信號Q(2)被拉高至高電位,且移位信號G(2)連帶地因為控制信號Q(2)而被拉高至高電位,且此時控制信號Q(3)被拉高至暫態電位。而由於在時間點t1時,觸控電路開始進行觸控偵測,時脈信號CK(3)被拉低至低電位,且觸控致能信號TP_EN被拉高至高電位。此時,由於時脈信號CK(3)為低電位,移位信號G(3)無法經由電晶體T8、T9被時脈信號CK(3)連帶地拉高,因此控制信號Q(3)無法藉由前述的電容耦合效應被調整至高電位,從而無法令移位信號G(3)被調整至高電位。As shown in FIG. 3, before the time point t1, the gate driving circuit 1 operates normally, so the control signal Q(2) is pulled high to the high potential, and the shift signal G(2) is associated with the control signal Q(2). ) is pulled high to high, and at this time the control signal Q(3) is pulled high to the transient potential. Since the touch circuit starts to perform touch detection at time t1, the clock signal CK(3) is pulled low to a low level, and the touch enable signal TP_EN is pulled high to a high level. At this time, since the clock signal CK(3) is at a low potential, the shift signal G(3) cannot be pulled up by the clock signal CK(3) via the transistors T8 and T9, so the control signal Q(3) cannot be The aforementioned capacitive coupling effect is adjusted to a high potential, so that the shift signal G(3) cannot be adjusted to a high potential.
此時,第一開關106因為高電位的觸控致能信號TP_EN而導通,箝制信號K(3)被拉低至低電位而不至於經由電晶體T3導通電晶體T5、T6、T7。而且重置電路110也依據高電位的觸控致能信號TP_EN將閘極觸控信號SR(3)的電位調整至第一參考電壓XDONB。是故,藉由上述之作動,在時間點t1至時間點t2之間,閘極驅動信號SR(3)以及其他的移位暫存器產生的閘極驅動信號被調整至低電位,而不會干擾到觸控電路進行觸控偵測。At this time, the first switch 106 is turned on because of the high-potential touch enable signal TP_EN, and the clamp signal K(3) is pulled low to a low potential without conducting the transistors T5, T6, T7 via the transistor T3. Moreover, the reset circuit 110 also adjusts the potential of the gate touch signal SR(3) to the first reference voltage XDONB according to the high potential touch enable signal TP_EN. Therefore, by the above operation, between the time point t1 and the time point t2, the gate drive signal SR(3) and the other gate drive signals generated by the shift register are adjusted to a low potential without It will interfere with the touch circuit for touch detection.
除了如圖2所述的實施態樣之外,移位暫存器10_3還可具有下述的幾種實施態樣。In addition to the embodiment as described in FIG. 2, the shift register 10_3 can have several embodiments as described below.
請參照圖4,圖4係為根據本發明另一實施例所繪示之移位暫存器的電路示意圖。在圖4所對應的實施例中,重置電路110’係為一多工器。重置電路110’的第一輸入端電性連接至第二參考電壓VGH。重置電路110’的第二輸入端電性連接至第一反相器104的輸出端。重置電路110’的選擇信號端用以接收觸控致能信號TP_EN。重置電路110’的輸出端電性連接第二反相器108的輸入端。重置電路110’係依據觸控致能信號TP_EN的電位高低而選擇性地輸出第二參考電位VGH或第一反相器104輸出的箝制信號。在一實施例中,當觸控致能信號TP_EN為低準位時,重置電路110’依據第二參考電壓VGH輸出閘極驅動信號,而當觸控致能信號TP_EN為高準位時,重置電路110’依據第一反相器104輸出的箝制信號K(3)來輸出閘極驅動信號。亦即,在另一實施例中,重置電路110’係依據反相的觸控致能信號TP_EN的電位高低而選擇性地輸出第二參考電壓VGH或第一反相器104輸出的箝制信號。Please refer to FIG. 4. FIG. 4 is a schematic circuit diagram of a shift register according to another embodiment of the present invention. In the embodiment corresponding to Figure 4, the reset circuit 110' is a multiplexer. The first input of the reset circuit 110' is electrically coupled to the second reference voltage VGH. The second input of reset circuit 110' is electrically coupled to the output of first inverter 104. The selection signal terminal of the reset circuit 110' is configured to receive the touch enable signal TP_EN. The output of reset circuit 110' is electrically coupled to the input of second inverter 108. The reset circuit 110' selectively outputs the second reference potential VGH or the clamp signal output from the first inverter 104 according to the potential level of the touch enable signal TP_EN. In an embodiment, when the touch enable signal TP_EN is at a low level, the reset circuit 110' outputs a gate drive signal according to the second reference voltage VGH, and when the touch enable signal TP_EN is at a high level, The reset circuit 110' outputs a gate drive signal in accordance with the clamp signal K(3) output from the first inverter 104. That is, in another embodiment, the reset circuit 110' selectively outputs the second reference voltage VGH or the clamp signal output by the first inverter 104 according to the potential of the inverted touch enable signal TP_EN. .
請參照圖5,圖5係為根據本發明更一實施例所繪示之移位暫存器的電路示意圖。在圖5所對應的實施例中,移位暫存器10_3更具有第三反相器114與第四反相器116。第三反相器114電性連接於第二反相器108的輸出端。第四反相器116電性連接於第三反相器114的輸出端。此外。Please refer to FIG. 5. FIG. 5 is a schematic circuit diagram of a shift register according to a further embodiment of the present invention. In the embodiment corresponding to FIG. 5, the shift register 10_3 further has a third inverter 114 and a fourth inverter 116. The third inverter 114 is electrically connected to the output of the second inverter 108. The fourth inverter 116 is electrically connected to the output of the third inverter 114. Also.
在圖5所對應的實施例中,移位暫存器10_3更可包含第三開關118。第三開關118例如為電晶體T22。第三開關118的第一端電性連接於第三反相器114的輸出端,第三開關118的第二端電性連接於第二參考電壓VGH,第三開關118依據第三開關118的控制端的觸控致能反相信號~TP_EN,選擇性的於第三開關118的第一端與第三開關118的第二端之間建立電流路徑。其中,第三開關118的電晶體T22例如為P型金屬氧化物半導體場效電晶體(metal oxide semiconductor field effect transistor, MOSFET,)或N型金屬氧化物半導體場效電晶體。而隨著電晶體T22的類型不同,電晶體T22係依據觸控致能信號TP_EN或觸控致能反相信號~TP_EN而導通。此係為所屬技術領域具有通常知識者經詳閱本說明書後可自由設計,在此並不加以限制。In the embodiment corresponding to FIG. 5, the shift register 10_3 may further include a third switch 118. The third switch 118 is, for example, a transistor T22. The first end of the third switch 118 is electrically connected to the output end of the third inverter 114, the second end of the third switch 118 is electrically connected to the second reference voltage VGH, and the third switch 118 is according to the third switch 118. The touch enable reverse signal ~TP_EN of the control terminal selectively establishes a current path between the first end of the third switch 118 and the second end of the third switch 118. The transistor T22 of the third switch 118 is, for example, a P-type metal oxide semiconductor field effect transistor (MOSFET) or an N-type metal oxide semiconductor field effect transistor. As the type of the transistor T22 is different, the transistor T22 is turned on according to the touch enable signal TP_EN or the touch enable inverted signal ~TP_EN. This is a general knowledge of those skilled in the art, and can be freely designed after reading this specification, and is not limited herein.
請參照圖6,圖6係為根據本發明再一實施例所繪示之移位暫存器的電路示意圖。相較於圖5,如圖6所示,事實上移位暫存器10_3也可不具有電晶體T21。Please refer to FIG. 6. FIG. 6 is a schematic circuit diagram of a shift register according to still another embodiment of the present invention. Compared to FIG. 5, as shown in FIG. 6, in fact, the shift register 10_3 may not have the transistor T21.
綜合以上所述,本發明揭露了一種移位暫存器,藉由一開關電路適時地對移位暫存器中的至少一個反相器的輸出節點或輸入節點進行充放電,以在為了不干擾內嵌式觸控面板進行觸控掃描而拉低移位暫存器的多個輸入信號或輸出信號時,也能讓所述的至少一個反相器的輸出或輸入節點維持所欲的電壓。藉此,除了讓移位暫存器在內嵌式觸控面板進行觸控掃描的期間內不會發生誤動作之外,還得以讓移位暫存器在內嵌式觸控面板結束觸控掃描後,能快速地重新正常運作。In summary, the present invention discloses a shift register for charging and discharging an output node or an input node of at least one inverter in a shift register in a timely manner by a switch circuit. Interfering with the in-cell touch panel for touch scanning and pulling down multiple input signals or output signals of the shift register can also maintain the desired voltage of the output or input node of the at least one inverter . In this way, in addition to letting the shift register not perform a malfunction during the touch scan of the in-cell touch panel, the shift register can be terminated by the touch panel in the in-cell touch panel. After that, it can quickly resume normal operation.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
1‧‧‧閘極驅動電路
10_1~10_4‧‧‧移位暫存器
102‧‧‧移位邏輯電路
104‧‧‧第一反相器
106‧‧‧第一開關
108‧‧‧第二反相器
110、110’‧‧‧重置電路
112‧‧‧致能開關
114‧‧‧第三反相器
116‧‧‧第四反相器
118‧‧‧第三開關
CK(1)~CK(4)‧‧‧時脈信號
G(2)、G(3)‧‧‧移位信號
K(3)‧‧‧箝制信號
Q(2)、Q(3)‧‧‧控制信號
TP_EN‧‧‧觸控致能信號
~TP_EN‧‧‧觸控致能反相信號
T1~T21‧‧‧電晶體
T11‧‧‧上拉開關
T12‧‧‧下拉開關
t1、t2‧‧‧時間點
SR(1)~SR(4)‧‧‧閘極驅動信號
VGH‧‧‧第二參考電壓
XDONB‧‧‧第一參考電壓1‧‧ ‧ gate drive circuit
10_1~10_4‧‧‧Shift register
102‧‧‧Shift logic circuit
104‧‧‧First Inverter
106‧‧‧First switch
108‧‧‧Second inverter
110, 110'‧‧‧Reset circuit
112‧‧‧Enable switch
114‧‧‧ Third Inverter
116‧‧‧fourth inverter
118‧‧‧third switch
CK(1)~CK(4)‧‧‧ clock signal
G(2), G(3)‧‧‧ shift signals
K(3)‧‧‧ clamp signal
Q(2), Q(3)‧‧‧ control signals
TP_EN‧‧‧Touch enable signal
~TP_EN‧‧‧Touch enabled reverse signal
T1~T21‧‧‧O crystal
T11‧‧‧ Pull-up switch
T12‧‧‧ pull-down switch
T1, t2‧‧‧ time point
SR(1)~SR(4)‧‧‧ gate drive signal
VGH‧‧‧second reference voltage
XDONB‧‧‧ first reference voltage
圖1係為根據本發明一實施例所繪示之閘極驅動電路的功能方塊示意圖。 圖2係為根據本發明一實施例所繪示之移位暫存器的電路示意圖。 圖3係為根據本發明圖2所繪示之移位暫存器的時序示意圖。 圖4係為根據本發明另一實施例所繪示之移位暫存器的電路示意圖。 圖5係為根據本發明更一實施例所繪示之移位暫存器的電路示意圖。 圖6係為根據本發明再一實施例所繪示之移位暫存器的電路示意圖。FIG. 1 is a functional block diagram of a gate driving circuit according to an embodiment of the invention. FIG. 2 is a schematic circuit diagram of a shift register according to an embodiment of the invention. FIG. 3 is a timing diagram of the shift register shown in FIG. 2 according to the present invention. 4 is a circuit diagram of a shift register according to another embodiment of the present invention. FIG. 5 is a schematic circuit diagram of a shift register according to a further embodiment of the present invention. FIG. 6 is a schematic circuit diagram of a shift register according to still another embodiment of the present invention.
102‧‧‧移位邏輯電路 102‧‧‧Shift logic circuit
104‧‧‧第一反相器 104‧‧‧First Inverter
106‧‧‧第一開關 106‧‧‧First switch
108‧‧‧第二反相器 108‧‧‧Second inverter
110‧‧‧重置電路 110‧‧‧Reset circuit
112‧‧‧致能開關 112‧‧‧Enable switch
CK(3)‧‧‧時脈信號 CK(3)‧‧‧ clock signal
G(3)‧‧‧移位信號 G(3)‧‧‧ shift signal
K(3)‧‧‧箝制信號 K(3)‧‧‧ clamp signal
Q(3)‧‧‧控制信號 Q(3)‧‧‧ control signal
SR(2)、SR(3)‧‧‧閘極驅動信號 SR(2), SR(3)‧‧‧ gate drive signal
TP_EN‧‧‧觸控致能信號 TP_EN‧‧‧Touch enable signal
T1~T21‧‧‧電晶體 T1~T21‧‧‧O crystal
VGH‧‧‧第一參考電壓 VGH‧‧‧ first reference voltage
XDONB‧‧‧第二參考電壓 XDONB‧‧‧second reference voltage
Claims (7)
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TW104136346A TWI576738B (en) | 2015-11-04 | 2015-11-04 | Shift register |
CN201511003223.4A CN105609034B (en) | 2015-11-04 | 2015-12-28 | Shift temporary storage device |
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TW104136346A TWI576738B (en) | 2015-11-04 | 2015-11-04 | Shift register |
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TWI637371B (en) * | 2017-12-28 | 2018-10-01 | 友達光電股份有限公司 | Shift register circuit |
TWI709886B (en) * | 2019-05-02 | 2020-11-11 | 友達光電股份有限公司 | Touch and display device |
TWI776554B (en) * | 2020-06-19 | 2022-09-01 | 日商凸版印刷股份有限公司 | Shift register and display device |
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TWI602168B (en) * | 2016-11-28 | 2017-10-11 | 友達光電股份有限公司 | Shift register and timimg control method thereof |
TWI646779B (en) * | 2017-07-21 | 2019-01-01 | 義隆電子股份有限公司 | Processing circuit of reset signal |
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KR101293559B1 (en) * | 2007-04-06 | 2013-08-06 | 삼성디스플레이 주식회사 | Touch sensible display device, and apparatus and driving method thereof |
JP5670124B2 (en) * | 2010-08-23 | 2015-02-18 | 株式会社ジャパンディスプレイ | Display device with touch detection function, drive circuit, driving method of display device with touch detection function, and electronic device |
TWI439050B (en) * | 2010-10-27 | 2014-05-21 | Au Optronics Corp | Shift register and touch device |
KR101819678B1 (en) * | 2011-04-07 | 2018-01-17 | 엘지디스플레이 주식회사 | Display having touch sensor and driving method thereof |
KR102156767B1 (en) * | 2013-12-23 | 2020-09-16 | 엘지디스플레이 주식회사 | Display having a touch sensor |
CN104240631B (en) * | 2014-08-18 | 2016-09-28 | 京东方科技集团股份有限公司 | GOA circuit and driving method, display device |
CN104808862B (en) * | 2015-05-14 | 2018-02-23 | 厦门天马微电子有限公司 | The driving method of array base palte, touch-control display panel and array base palte |
CN104834427B (en) * | 2015-05-27 | 2017-11-14 | 京东方科技集团股份有限公司 | Touch drive circuit and its driving method, array base palte and touch control display apparatus |
-
2015
- 2015-11-04 TW TW104136346A patent/TWI576738B/en not_active IP Right Cessation
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TWI637371B (en) * | 2017-12-28 | 2018-10-01 | 友達光電股份有限公司 | Shift register circuit |
TWI709886B (en) * | 2019-05-02 | 2020-11-11 | 友達光電股份有限公司 | Touch and display device |
TWI776554B (en) * | 2020-06-19 | 2022-09-01 | 日商凸版印刷股份有限公司 | Shift register and display device |
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CN105609034A (en) | 2016-05-25 |
TWI576738B (en) | 2017-04-01 |
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