TW201715745A - Method of producing photovoltaic cell element - Google Patents

Abstract

A method of producing a photovoltaic cell element, the method comprising: a step of applying a composition for forming an impurity diffusion layer, on one surface of a semiconductor substrate via a layer comprising a compound, the composition comprising a dispersion medium and glass particles that contain an n-type impurity or a p-type impurity; a step of forming an impurity diffusion layer by performing a thermal treatment to the semiconductor substrate to which the composition for forming an impurity diffusion layer has been applied; and a step of forming an electrode at a region at which the impurity diffusion layer has been formed.

Description

Solar cell component manufacturing method

The present invention relates to a method of fabricating a solar cell element.

Among the solar cell elements currently produced, a n-electrode type solar cell element in which an n-electrode is formed on a light-receiving surface of a tantalum substrate and a p-electrode is formed on the back surface is dominant. However, in the double-sided electrode type solar cell element, sunlight does not enter the germanium substrate directly under the n-electrode formed on the light-receiving surface, and therefore no current is generated in this portion. Therefore, a back electrode type solar cell element in which an electrode is not formed on the light receiving surface of the solar cell element and the n ⁺⁺ electrode and the p ⁺ electrode are formed on the back surface opposite to the light receiving surface has been proposed. In the back electrode type solar cell element, since the incidence of sunlight is not hindered by the electrode formed on the light receiving surface, a high conversion efficiency can be expected in principle.

As a method of manufacturing the back electrode type solar cell element, for example, the following production method is known (for example, refer to Patent Document 1). First, a diffusion control mask as a mask is formed on the entire surface of the light-receiving surface and the back surface of the ruthenium substrate. Here, the diffusion control mask has a function of suppressing diffusion of impurities into the germanium substrate. Next, a part of the diffusion control mask on the back surface of the substrate is removed to form an opening. Then, when the p-type impurity is diffused from the opening of the diffusion control mask to the back surface of the germanium substrate, the p-type impurity diffusion layer is formed only in the opening. Next, after all the diffusion control masks on the back surface of the ruthenium substrate are removed, a diffusion control mask is formed on the back surface of the ruthenium substrate again. Then, a part of the diffusion control mask on the back surface of the ruthenium substrate is removed, and the n-type impurity is diffused from the opening to the back surface of the ruthenium substrate to form an n-type impurity layer. Then, all of the diffusion control masks on the back surface of the substrate are removed, whereby a p-type impurity diffusion layer and an n-type impurity diffusion layer are formed on the back surface. Further, a texture structure, an anti-reflection film, a passivation layer, an electrode, or the like is formed, thereby completing the back electrode type solar cell element.

Further, a method of producing a back electrode type solar cell element using a diffusing agent containing an n-type impurity or a diffusing agent containing a p-type impurity has been disclosed (for example, see Patent Document 2). By applying a diffusing agent containing an n-type impurity or a diffusing agent containing a p-type impurity by this method, a protective layer covering at least one of a diffusing agent containing an n-type impurity and a diffusing agent containing a p-type impurity is formed. [Prior Art Document] [Patent Literature]

[Patent Document 1] U.S. Patent No. 4,927,770 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-76546

[Problems to be solved by the invention]

However, in the manufacturing method described in Patent Document 1, since the p-type impurity diffusion layer and the n-type impurity diffusion layer are formed on the back surface, it is necessary to repeatedly form the diffusion control mask, form the opening, and diffuse and diffuse the impurities. A cumbersome step such as controlling the steps of removing the mask. Further, in the production method described in Patent Document 2, the step of providing a protective layer and the step of removing the protective layer are required, and the impurity diffusion layer may be formed to an unnecessary portion due to heat treatment conditions during diffusion. The present invention has been made in view of the above conventional problems, and an object thereof is to provide a method for producing a solar cell element in which an impurity diffusion layer can be formed by a simple process. [Means for solving the problem]

The present invention encompasses the following embodiments. <1> A method for producing a solar cell element, comprising: a step of forming a composition by providing an impurity diffusion layer on a surface of a semiconductor substrate via a layer containing a compound containing n-type a glass particle or a dispersion medium of an impurity or a p-type impurity; a thermal diffusion step of heat-treating the semiconductor substrate to which the impurity diffusion layer forming composition is applied to form an impurity diffusion layer; and forming an electrode in a region where the impurity diffusion layer is formed A step of.

<2> A method for producing a solar cell element, comprising: a step of forming an n-type impurity diffusion layer forming composition on a first region of one surface of a semiconductor substrate, wherein the n-type impurity diffusion layer forming composition contains n a glass powder and a dispersion medium of a type of impurity; a step of forming a composition of a p-type impurity diffusion layer on a surface of the semiconductor substrate on which the first region is provided and a second region other than the first region, wherein the p The impurity-diffusion layer forming composition contains a glass powder containing a p-type impurity and a dispersion medium; and heat-treating the semiconductor substrate to which the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are applied to form an n-type a thermal diffusion step of the impurity diffusion layer and the p-type impurity diffusion layer; a step of forming an electrode in each of the first region in which the n-type impurity diffusion layer is formed and the second region in which the p-type impurity diffusion layer is formed; and At least one of the group consisting of the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition is imparted to the group via a layer containing a compound On a semiconductor substrate.

The method for producing a solar cell element according to the above aspect, wherein the layer containing the compound is a layer of an oxide or a nitride.

The method for producing a solar cell element according to any one of the above aspects, wherein the n-type impurity comprises a group selected from the group consisting of P (phosphorus) and Sb (锑) At least one element.

The method for producing a solar cell element according to any one of the above aspects, wherein the p-type impurity is selected from the group consisting of B (boron), Al (aluminum), and Ga (gallium). At least one element of the group consisting of.

The method for producing a solar cell element according to any one of the above aspects, wherein the glass powder containing the n-type impurity is selected from the group consisting of P ₂ O ₃ , P ₂ O ₅ and Sb At least one of the group consisting of ₂ O ₃ containing an n-type impurity, and selected from the group consisting of SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO At least one glass component substance in the group consisting of CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ and MoO ₃ .

The method for producing a solar cell element according to any one of the above aspects, wherein the glass powder containing the p-type impurity is selected from the group consisting of B ₂ O ₃ , Al ₂ O ₃ and Ga At least one of the groups consisting of ₂ O ₃ containing a p-type impurity, and selected from the group consisting of SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO At least one glass component substance in the group consisting of CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ and MoO ₃ . [Effects of the Invention]

According to the present invention, it is possible to provide a method for producing a solar cell element which can form an impurity diffusion layer by a simple process.

In this specification, the term "step" is not only an independent step, but even if it cannot be clearly distinguished from other steps, it is included in the term if the purpose of the step is achieved. In addition, the numerical range shown using "-" in this specification shows the range which has the minimum value and the maximum value of the numerical value of the before and after the [-. In addition, in the present specification, when a plurality of substances corresponding to the respective components are present in the composition as a content of each component in the composition, unless otherwise specified, the various substances present in the composition are indicated. Total measurement. The (meth)acrylic group means an acrylic group or a methacryl group, and the (meth)acrylate means an acrylate or a methacrylate. When the term "layer" is viewed as a plan view, the configuration of the shape formed on a part of the shape is included in addition to the configuration of the shape of the entire surface.

<Manufacturing Method of Solar Cell Element> The first embodiment of the method for producing a solar cell element according to the present invention includes the step of forming a composition by providing an impurity diffusion layer on a surface of a semiconductor substrate via a layer containing a compound, The impurity diffusion layer forming composition contains glass particles containing an n-type impurity or a p-type impurity, a dispersion medium, and a heat diffusion step of heat-treating the semiconductor substrate to which the impurity diffusion layer forming composition is applied to form an impurity diffusion layer; The step of forming an electrode with the region of the impurity diffusion layer.

A second embodiment of the method for producing a solar cell element according to the present invention includes the step of providing an n-type impurity diffusion layer forming composition in a first region on one surface of a semiconductor substrate, wherein the n-type impurity diffusion layer forming composition contains a glass powder containing an n-type impurity, a dispersion medium, and a step of forming a composition of a p-type impurity diffusion layer on a surface of the semiconductor substrate on which the first region is provided and different from the first region; The p-type impurity diffusion layer forming composition contains a glass powder containing a p-type impurity and a dispersion medium, and heat-treats the semiconductor substrate to which the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are applied. a thermal diffusion step of forming an n-type impurity diffusion layer and a p-type impurity diffusion layer; and forming an electrode in each of the first region in which the n-type impurity diffusion layer is formed and the second region in which the p-type impurity diffusion layer is formed; At least one selected from the group consisting of the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition is passed through a layer containing a compound I to the semiconductor substrate.

Since the method for producing a solar cell element of the present invention includes the above steps, in the manufacturing step of the back electrode type solar cell element, the impurity diffusion layer can be formed by a simple process. In the case where a diffusion layer of an n-type impurity or a p-type impurity is formed on one surface of a semiconductor substrate as described in the prior art, in the conventional method, a layer containing a compound, that is, a protective film is removed, and the surface of the semiconductor substrate is removed. Exposed, an impurity diffusion layer is formed on the exposed portion. That is, in the conventional method, a step (patterning) in which the protective film is partially removed is required. In the present invention, the layer containing the compound is not removed, and the impurity diffusion layer is formed on the layer containing the compound to form a composition, and thermal diffusion is performed to form a desired impurity diffusion layer on the semiconductor substrate. Therefore, the impurity diffusion layer can be formed on the semiconductor substrate by a process which is simpler than the conventional method.

In the method for producing a solar cell element of the present invention, the reason why the impurity diffusion layer is formed on the semiconductor substrate without removing the layer containing the compound is considered by the inventors to be that the impurity diffusion layer is formed in the composition. The glass component of the glass particles contained therein is doped with a layer containing a compound during thermal diffusion, and the molten glass is in close contact with or in contact with the semiconductor substrate, whereby the impurity component can form an impurity diffusion layer on the semiconductor substrate.

Further, according to the method for producing a solar cell element of the present invention, it is possible to suppress the impurity diffusion layer formation composition more efficiently than the case where the impurity diffusion layer forming composition is applied to the semiconductor substrate without passing through the layer containing the compound. The impurity diffusion layer is formed in a region other than a desired region, and the impurity diffusion layer forming composition contains glass particles containing an n-type impurity or a p-type impurity, and a dispersion medium.

In the second embodiment of the method for producing a solar cell device of the present invention, the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are applied to the first region and the second region, respectively. By heat treatment, the n-type impurity is diffused from the n-type impurity diffusion layer forming composition into the semiconductor substrate in the first region, and the n-type impurity diffusion layer is accurately formed into a desired shape, and in the second region, The p-type impurity is diffused from the p-type impurity diffusion layer forming composition into the semiconductor substrate, and the p-type impurity diffusion layer is accurately formed into a desired shape. Further, formation of an n-type impurity diffusion layer or a p-type impurity diffusion layer in the third region different from the first region and the second region can be suppressed.

In the following, the layer containing the compound, the n-type impurity diffusion layer forming composition, and the p-type impurity diffusion layer forming composition in the present invention will be described. Next, the composition including the compound and the n-type impurity diffusion layer are used to form a composition and p. A method of manufacturing a solar cell element in which a type of impurity diffusion layer is formed into a composition will be described.

[Layer-Containing Layer] The method for producing a solar cell element according to the present invention includes the step of forming a composition by providing an impurity diffusion layer on a surface of a semiconductor substrate via a layer containing a compound containing the composition. A glass particle or a dispersion medium containing an n-type impurity or a p-type impurity. The "layer containing a compound" means an impurity diffusion layer forming composition on a layer containing a compound formed on the surface of a semiconductor substrate, for example.

The material of the layer containing the compound is not particularly limited as long as it can form an impurity diffusion layer on the semiconductor substrate without removing the layer containing the compound as described above. Specific examples thereof include inorganic compounds such as oxides and nitrides of cerium, aluminum, vanadium, cerium, and lanthanum. In the case where the layer containing the compound is, for example, an oxide layer of ruthenium, dry heat oxidation or wet heat can be performed by a deposition method such as a normal vapor chemical vapor deposition (CVD) method using decane gas and oxygen. It is formed by a thermal oxidation method such as oxidation or vapor thermal oxidation. When the layer containing the compound is a nitride layer of ruthenium, it can be formed by a plasma CVD method using decane gas, ammonia gas, and nitrogen gas.

The layer containing the compound may be formed on the entire surface of the semiconductor substrate, or may be formed only in a specific region. Further, when an n-type impurity diffusion layer and a p-type impurity diffusion layer are formed in different regions on the same surface of the semiconductor substrate, a region corresponding to the n-type impurity diffusion layer and a region corresponding to the p-type impurity diffusion layer can be formed. The two regions form a layer containing a compound, and a layer containing a compound may be formed only in any one region. The thickness of the layer containing the compound is not particularly limited and may be, for example, 10 nm to 2000 nm, preferably 50 nm to 1000 nm, and more preferably 100 nm to 500 nm.

[N-type impurity diffusion layer forming composition] The n-type impurity diffusion layer forming composition used in the method for producing a solar cell element of the present invention contains at least one of glass particles containing an n-type impurity and at least one of dispersion media. Other additives may be contained as needed in consideration of coatability and the like. The "n-type impurity diffusion layer forming composition" is a material which contains an n-type impurity and is applied to a germanium substrate, and then thermally diffuses the n-type impurity to form an n-type impurity diffusion layer. The composition is formed by using an n-type impurity diffusion layer, and an n-type impurity diffusion layer is formed at a desired portion. Further, since the n-type impurities in the glass particles are hard to be volatilized even in the heat treatment (calcination), it is possible to suppress the phenomenon that the volatilized gas is generated not only the portion where the n-type impurity diffusion layer is formed, but also the semiconductor. An n-type impurity diffusion layer is also formed on the back surface or the side surface of the substrate. The reason is considered to be that the n-type impurity is bonded to the element in the glass particle or incorporated into the glass, so that it is difficult to generate a volatilized gas.

(Glass Particles Containing n-Type Impurities) The "n-type impurities" are elements which can form an n-type impurity diffusion layer by being diffused into a germanium substrate. As the n-type impurity, an element of Group 15 can be used, and examples thereof include P (phosphorus), Sb (yttrium), Bi (yttrium), and As (arsenic). From the viewpoints of safety, easiness of vitrification, and the like, P or Sb is suitable. Examples of the substance containing an n-type impurity for introducing an n-type impurity into the glass particles include P ₂ O ₃ , P ₂ O ₅ , Sb ₂ O ₃ , Bi ₂ O ₃ and As ₂ O ₃ , preferably used. At least one of P ₂ O ₃ , P ₂ O ₅ and Sb ₂ O ₃ . Further, the glass particles containing the n-type impurities can control the melting temperature, the softening point, the glass transition point, the chemical durability, and the like by adjusting the component ratio as needed. It is preferable to further contain the glass component substance described below.

Examples of the glass component substance include SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl ₂ O, V ₂ O ₅ , SnO, and WO ₃ . MoO ₃ , MnO, La ₂ O ₃ , Nb ₂ O ₅ , Ta ₂ O ₅ , Y ₂ O ₃ , TiO ₂ , ZrO ₂ , GeO ₂ , TeO ₂ and Lu ₂ O ₃ are preferably selected from the group consisting of At least at least SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ , and MoO ₃ One.

Examples of the glass particles containing an n-type impurity include a system containing both an n-type impurity and a glass component. Specifically, P ₂ O ₅ -SiO ₂ type (described in the order of the substance containing the n-type impurity - the glass component substance, the same applies hereinafter), P ₂ O ₅ -K ₂ O system, P ₂ O ₅ -Na ₂ O system, P ₂ O ₅ -Li ₂ O system, P ₂ O ₅ -BaO system, P ₂ O ₅ -SrO system, P ₂ O ₅ -CaO system, P ₂ O ₅ -MgO system, P ₂ O ₅ -BeO system, P ₂ O ₅ -ZnO system, P ₂ O ₅ -CdO system, P ₂ O ₅ -PbO system, P ₂ O ₅ -V ₂ O ₅ system, P ₂ O ₅ -SnO system, P ₂ O _a system comprising P ₂ O ₅ as a substance containing an n-type impurity, such as a _5- GeO ₂ system, a P ₂ O ₅ -TeO ₂ system, or the like, comprising Sb ₂ O ₃ instead of P ₂ in the system containing P ₂ O ₅ O ₅ is a glass particle or the like of a system containing a substance of an n-type impurity. Further, glass particles containing two or more kinds of substances containing an n-type impurity such as P ₂ O ₅ -Sb ₂ O ₃ -based or P ₂ O ₅ -As ₂ O ₃ -based may be used. In the above, a composite glass containing two components is exemplified, and glass particles containing three or more components such as P ₂ O ₅ —SiO ₂ —V ₂ O ₅ and P ₂ O ₅ —SiO ₂ —CaO may be used.

The content ratio of the glass component in the glass particles containing the n-type impurity is preferably set in consideration of the melting temperature, the softening point, the glass transition point, the chemical durability, and the like. In general, it is preferably 0.1% by mass to 95% by mass, more preferably 0.5% by mass to 90% by mass. Specifically, in the case of P ₂ O ₅ —SiO ₂ —CaO-based glass, the content ratio of CaO is preferably 1% by mass to 30% by mass, and more preferably 5% by mass to 20% by mass.

The softening point of the glass particles containing the n-type impurities is preferably from 200 ° C to 1000 ° C, more preferably from 300 ° C to 900 ° C, from the viewpoints of diffusibility at the time of diffusion treatment and suppression of dripping. The shape of the glass particles may be a substantially spherical shape, a flat shape, a block shape, a plate shape, or a scale shape. From the viewpoints of coating properties, diffusibility, and the like on the substrate in the case where the composition is formed into an n-type impurity diffusion layer, it is preferably a spherical shape, a flat shape, or a plate shape. The average particle diameter of the glass particles is preferably 100 μm or less. When glass particles having an average particle diameter of 100 μm or less are used, there is a tendency that a smooth n-type impurity diffusion layer forming composition layer is easily formed. The average particle diameter of the glass particles is more preferably 50 μm or less, and still more preferably 10 μm or less. The lower limit of the average particle diameter of the glass particles is not particularly limited, but is preferably 0.01 μm or more. Here, the average particle diameter of the glass particles means a volume average particle diameter, and can be measured by a laser scattering diffraction particle size distribution measuring apparatus or the like.

The glass particles containing an n-type impurity can be produced, for example, by the following procedure. First weigh the raw materials and fill them into the crucible. Examples of the material of the crucible include platinum, platinum-rhodium, iridium, aluminum oxide, quartz, and carbon. The melting temperature, the environment, the reactivity with the molten material, and the incorporation of impurities are appropriately selected. Next, it is heated in an electric furnace at a temperature corresponding to the glass composition to prepare a molten liquid. At this time, it is desirable to stir the melt so that it becomes uniform. Then, the obtained melt is discharged onto a zirconia substrate, a carbon substrate or the like to vitrify the melt. Finally, the glass is pulverized to form a pellet. The pulverization can be carried out using a known device such as a jet mill, a bead mill, or a ball mill.

The content ratio of the glass particles containing the n-type impurity in the n-type impurity diffusion layer forming composition can be determined in consideration of coatability, diffusibility of the n-type impurity, and the like. In general, the content ratio of the glass particles in the n-type impurity diffusion layer forming composition is preferably 0.1% by mass to 95% by mass, more preferably 1% by mass to 90% by mass, still more preferably 1.5% by mass. From % to 85% by mass, particularly preferably from 2% by mass to 80% by mass.

(Dispersion Medium) Next, the dispersion medium will be described. The "dispersion medium" is a medium in which the glass particles are dispersed in the composition. Specifically, a binder, a solvent, a combination of these, or the like can be used as the dispersion medium.

- Binder - Examples of the binder include polyvinyl alcohol, polypropylene decylamine, polyvinyl decylamine, polyvinylpyrrolidone, poly(meth)acrylic acid, polyethylene oxide, polysulfonic acid, Acrylamide alkyl sulfonic acid, cellulose ethers, cellulose derivatives, carboxymethyl cellulose, hydroxyethyl cellulose, ethyl cellulose, gelatin, starch and starch derivatives, sodium alginate, Sanxian Gum and Sanxian gum derivatives, guar gum and guar derivatives, scleroglucans and scleroglucan derivatives, tragacanth and tragacanth derivatives, dextrin and dextrin derivatives, (Meth)acrylic resin, (meth) acrylate resin (for example, alkyl (meth) acrylate resin, dimethylaminoethyl methacrylate resin, etc.), butadiene resin, styrene resin And a copolymer of these resins, a decane resin, and the like. These binders may be used alone or in combination of two or more. The weight average molecular weight of the binder is not particularly limited, and a desired weight average molecular weight binder can be selected depending on the desired viscosity of the composition of the n-type impurity diffusion layer.

- Solvent - The solvent may, for example, be acetone, methyl ethyl ketone, methyl n-propyl ketone, methyl isopropyl ketone, methyl n-butyl ketone, methyl isobutyl ketone, methyl n-amyl ketone, or Base hexyl ketone, diethyl ketone, dipropyl ketone, diisobutyl ketone, trimethyl fluorenone, cyclohexanone, cyclopentanone, methyl cyclohexanone, 2,4-pentanedione, acetone Ketone solvent such as acetone; diethyl ether, methyl ethyl ether, methyl-n-propyl ether, diisopropyl ether, tetrahydrofuran, methyltetrahydrofuran, dioxane, dimethyl dioxane, ethylene Alcohol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol di-n-propyl ether, ethylene glycol dibutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether , diethylene glycol methyl-n-propyl ether, diethylene glycol methyl-n-butyl ether, diethylene glycol di-n-propyl ether, diethylene glycol di-n-butyl ether, diethylene glycol methyl- n-Hexyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol methyl ethyl ether, triethylene glycol methyl-n-butyl ether, triethylene glycol di-n-butyl ether, Triethylene glycol methyl-n-hexyl ether, tetraethylene glycol dimethyl ether, tetraethylene Alcohol diethyl ether, tetraethylene glycol methyl ethyl ether, tetraethylene glycol methyl-n-hexyl ether, tetraethylene glycol di-n-butyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol di-n-propyl ether, propylene glycol Dibutyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol methyl ethyl ether, dipropylene glycol methyl-n-butyl ether, dipropylene glycol di-n-propyl ether, dipropylene glycol di-n-butyl ether, dipropylene glycol Base-n-hexyl ether, tripropylene glycol dimethyl ether, tripropylene glycol diethyl ether, tripropylene glycol methyl ethyl ether, tripropylene glycol methyl-n-butyl ether, tripropylene glycol di-n-butyl ether, tripropylene glycol methyl-n-hexyl ether , tetrapropylene glycol dimethyl ether, tetrapropylene glycol diethyl ether, tetrapropylene glycol methyl ethyl ether, tetrapropylene glycol methyl-n-hexyl ether, tetrapropylene glycol di-n-butyl ether and other ether solvents; methyl acetate, ethyl acetate, acetic acid Ester, isopropyl acetate, n-butyl acetate, isobutyl acetate, second butyl acetate, n-amyl acetate, second amyl acetate, 3-methoxybutyl acetate, methyl amyl acetate, 2-ethylbutyl acetate, 2-ethylhexyl acetate, 2-(2-butoxyethyl acetate) Ethyl ester, benzyl acetate, cyclohexyl acetate, methylcyclohexyl acetate, decyl acetate, methyl acetate, ethyl acetate, diethylene glycol methyl ether acetate, diethyl Alcohol ether acetate, dipropylene glycol methyl ether acetate, dipropylene glycol diethyl ether acetate, glycol diacetate, methoxy triethylene glycol acetate, ethyl propionate, n-butyl propionate, Isoamyl propionate, diethyl oxalate, di-n-butyl oxalate, methyl lactate, ethyl lactate, n-butyl lactate, n-amyl lactate, ethylene glycol methyl ether propionate, ethylene glycol ether propionate Ester, ethylene glycol methyl ether acetate, ethylene glycol ethyl ether acetate, propylene glycol methyl ether acetate, propylene glycol diethyl ether acetate, propylene glycol propyl ether acetate, γ-butyrolactone, γ-valerolactone Ester solvent; acetonitrile, N-methylpyrrolidone, N-ethylpyrrolidone, N-propylpyrrolidone, N-butylpyrrolidone, N-hexyl pyrrolidone, N-cyclohexylpyrrole Aprotic polar solvents such as ketone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylhydrazine; methanol, ethanol, n-propanol, isopropanol, positive Butanol, isobutanol Second butanol, tert-butanol, n-pentanol, isoamyl alcohol, 2-methylbutanol, second pentanol, third pentanol, 3-methoxybutanol, n-hexanol, 2-methyl Pentanol, second hexanol, 2-ethylbutanol, second heptanol, n-octanol, 2-ethylhexanol, second octanol, n-nonanol, n-nonanol, second-undecane Alcohol, trimethyl decyl alcohol, second-tetradecanol, second heptadecyl alcohol, phenol, cyclohexanol, methylcyclohexanol, benzyl alcohol, ethylene glycol, 1,2-propanediol, 1,3 - an alcohol solvent such as butanediol, diethylene glycol, dipropylene glycol, triethylene glycol or tripropylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monophenyl ether, diethylene glycol monomethyl Ether, diethylene glycol monoethyl ether, diethylene glycol mono-n-butyl ether, diethylene glycol mono-n-hexyl ether, ethoxy triglycol, tetraethylene glycol mono-n-butyl ether, propylene glycol monomethyl ether a glycol monoether solvent such as dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether or tripropylene glycol monomethyl ether; terpineol such as α-terpinene or α-terpineol, laurelene, allo-ocimene, limonene, Dipentene, α-pinene, β-pinene, propyl ketone, Luo , Phellandrene other terpene solvent; water and the like. These solvents may be used alone or in combination of two or more. In the case where the n-type impurity diffusion layer is formed into a composition, from the viewpoint of coatability on the substrate, terpineol, diethylene glycol mono-n-butyl ether, and acetic acid-2-(2) are preferred. 2-butoxyethoxy)ethyl ester.

The content ratio of the dispersion medium in the n-type impurity diffusion layer forming composition can be determined in consideration of coatability, concentration of n-type impurities, and the like. The viscosity of the n-type impurity diffusion layer forming composition is preferably from 10 mPa·s to 1,000,000 mPa·s, more preferably from 50 mPa·s to 500,000 mPa·s, in view of coatability.

[P-type diffusion layer forming composition] The p-type impurity diffusion layer forming composition contains at least one of glass particles containing a p-type impurity and at least one kind of a dispersion medium. Other additives may be contained as needed in consideration of coatability and the like. Here, the "p-type impurity diffusion layer forming composition" means a material which contains a p-type impurity and which is thermally diffused on the p-type impurity after being applied to the germanium substrate, thereby forming a p-type impurity diffusion layer. . A p-type impurity diffusion layer is formed at a desired portion by forming a composition using a p-type impurity diffusion layer. Further, since the p-type impurity in the glass particles is hard to be volatilized even in the calcination, it is possible to suppress the phenomenon that the volatilized gas is generated and not only the portion to which the p-type impurity diffusion layer is formed, but also on the back surface of the semiconductor substrate. A p-type impurity diffusion layer is also formed on the side. The reason is considered to be that the p-type impurity is bonded to the element in the glass particle or incorporated into the glass, so that it is difficult to generate a volatilized gas.

(Glass Particles Containing P-Type Impurities) The "p-type impurities" are elements which can form a p-type impurity diffusion layer by being diffused into a germanium substrate. As the p-type impurity, an element of Group 13 can be used, and examples thereof include B (boron), Al (aluminum), and Ga (gallium). Examples of the substance containing a p-type impurity include B ₂ O ₃ , Al ₂ O ₃ and Ga ₂ O ₃ , and at least one selected from the group consisting of B ₂ O ₃ , Al ₂ O ₃ and Ga ₂ O ₃ is preferably used. Further, the glass particles containing the p-type impurities can control the melting temperature, the softening point, the glass transition point, the chemical durability, and the like by adjusting the component ratio as needed. It is preferable to further contain the glass component substance described below.

Examples of the glass component substance include SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl ₂ O, V ₂ O ₅ , SnO, and WO ₃ . MoO ₃ , MnO, La ₂ O ₃ , Nb ₂ O ₅ , Ta ₂ O ₅ , Y ₂ O ₃ , TiO ₂ , ZrO ₂ , GeO ₂ , TeO ₂ and Lu ₂ O ₃ are preferably selected from the group consisting of At least one of SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ , and MoO ₃ .

The glass particles containing a p-type impurity include glass particles containing both a substance containing a p-type impurity and a glass component. Specifically, B ₂ O ₃ -SiO ₂ system (described in the order of a substance containing a p-type impurity - a glass component substance, the same applies hereinafter), a B ₂ O ₃ -ZnO system, a B ₂ O ₃ -PbO system, B ₂ O ₃ alone system including B ₂ O ₃ as a substance containing a p-type impurity, Al ₂ O ₃ -SiO ₂ system or the like containing Al ₂ O ₃ as a substance containing a p-type impurity, Ga ₂ O ₃ - Glass particles such as a system such as a SiO ₂ system containing Ga ₂ O ₃ as a substance containing a p-type impurity. Further, glass particles containing two or more kinds of substances containing p-type impurities such as Al ₂ O ₃ -B ₂ O ₃ -based or Ga ₂ O ₃ -B ₂ O ₃ -based may be used. In the above, a single-component glass or a composite glass containing two components is exemplified, and glass particles containing three or more components such as B ₂ O ₃ —SiO ₂ —Na ₂ O may be used.

The content ratio of the glass component in the glass particles containing the p-type impurity is preferably set in consideration of the melting temperature, the softening point, the glass transition point, the chemical durability, and the like. In general, it is preferably 0.1% by mass to 95% by mass, more preferably 0.5% by mass to 90% by mass.

The softening point of the glass particles containing the p-type impurity is preferably from 200 ° C to 1000 ° C, more preferably from 300 ° C to 900 ° C, from the viewpoints of diffusibility at the time of diffusion treatment and suppression of dripping. The shape of the glass particles may be a substantially spherical shape, a flat shape, a block shape, a plate shape, or a scale shape. From the viewpoints of coating properties, diffusibility, and the like of the composition of the n-type impurity diffusion layer on the substrate, it is preferably a spherical shape, a flat shape, or a plate shape. The average particle diameter of the glass particles containing the p-type impurity is preferably 100 μm or less. When glass particles having an average particle diameter of 100 μm or less are used, there is a tendency that a smooth n-type impurity diffusion layer forming composition layer is easily formed. The average particle diameter of the glass particles is more preferably 50 μm or less, and still more preferably 10 μm or less. The lower limit of the average particle diameter of the glass particles is not particularly limited, but is preferably 0.01 μm or more.

The glass particles containing the p-type impurity can be produced in the same order as the glass particles containing the n-type impurity.

The content ratio of the glass particles containing the p-type impurity in the p-type impurity diffusion layer forming composition can be determined in consideration of coatability, diffusibility of the p-type impurity, and the like. In general, the content ratio of the glass particles in the p-type impurity diffusion layer forming composition is preferably 0.1% by mass to 95% by mass, more preferably 1% by mass to 90% by mass, still more preferably 1.5% by mass. From % to 85% by mass, particularly preferably from 2% by mass to 80% by mass.

The dispersion medium can be the same as the n-type impurity diffusion layer forming composition. The content ratio of the dispersion medium in the p-type impurity diffusion layer forming composition can be determined in consideration of coatability, concentration of p-type impurities, and the like. In view of coatability, the viscosity of the p-type impurity diffusion layer forming composition is preferably 10 mPa·s to 1,000,000 mPa·s or less, more preferably 50 mPa·s to 500,000 mPa·s or less.

[Method of Manufacturing Solar Cell Element] Hereinafter, an embodiment of a method of manufacturing a solar cell element of the present invention will be described. First, a damaged layer on the surface of a semiconductor substrate such as tantalum is removed by etching using an acidic or alkaline solution. Next, a layer containing a compound is formed on one surface of the semiconductor substrate. The details of the layer containing the compound are as described above.

Next, a fine uneven structure called a "texture structure" is formed on the surface (light-receiving surface) on the side of the semiconductor substrate on which the layer containing the compound is not formed. The texture structure can be formed, for example, by immersing a semiconductor substrate on which a layer containing a compound is formed in a liquid containing about 60 ° C of potassium hydroxide and isopropyl alcohol (IPA). The step of forming the texture structure may be performed after formation of an impurity diffusion layer to be described later.

Next, an n-type impurity diffusion layer is selectively formed in the first region in the same plane of the semiconductor substrate, and a p-type impurity diffusion layer is selectively formed in the second region. The shape and size of the first region and the second region are not particularly limited, and may be appropriately selected from the shapes and sizes of the n-type impurity diffusion layer and the p-type impurity diffusion layer which are generally used in the back electrode type solar cell element.

Specifically, for example, in the first region on the surface opposite to the surface on the light-receiving surface of the semiconductor substrate (hereinafter referred to as "back surface"), the n-type impurity diffusion layer is formed into a composition via a layer containing a compound. The shape and size of the first region can be appropriately selected depending on, for example, the shape and size of the n-type impurity diffusion layer to be formed. The shape can be set, for example, to be linear. The line width can be set, for example, from 100 μm to 300 μm. Further, a composition is formed in the second region on the back surface of the semiconductor substrate via the layer containing the compound to impart a p-type impurity diffusion layer. The shape and size of the second region can be appropriately selected depending on, for example, the shape and size of the p-type impurity diffusion layer to be formed. The shape can be set, for example, to be linear. The line width can be set, for example, from 500 μm to 900 μm.

Preferably, the first region and the second region are provided at a predetermined interval so as not to be in contact with each other. The interval between the first region and the second region can be appropriately selected depending on the physical properties of the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition. For example, it can be set to 1 mm to 3 mm. By providing the first region and the second region at a predetermined interval, the power generation efficiency of the configured back electrode type solar cell element can be further improved.

The order in which the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are imparted is not particularly limited. In other words, the p-type impurity diffusion layer forming composition can be applied to the second region after the n-type impurity diffusion layer forming composition is applied to the first region, and the p-type impurity diffusion layer forming composition can be applied to the second region. After the region, the n-type impurity diffusion layer forming composition is applied to the first region. Further, the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition can be collectively provided by the application method.

The method of applying the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition is not particularly limited, and a commonly used method can be used. For example, it can be carried out by a printing method such as a screen printing method or a gravure printing method, a spin coating method, a brush coating method, a spray method, a doctor blade method, a roll coating method, an inkjet method, or the like. The method of applying the n-type impurity diffusion layer forming composition and the method of providing the p-type impurity diffusion layer forming composition may be the same or different.

The amount of the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition is not particularly limited. For example, the amount of the glass particles may be from 0.01 g/m ² to 100 g/m ² , preferably from 0.1 g/m ² to 10 g/m ² . The amount of the n-type impurity diffusion layer forming composition and the amount of the p-type impurity diffusion layer forming composition can be formed according to the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition, and the n-type formed. The concentration of impurities in the impurity diffusion layer and the p-type impurity diffusion layer are independently selected.

After the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are provided on the semiconductor substrate, a heating step may be optionally provided, and the heating step is a solvent for containing the composition as a dispersion medium. Or at least a portion of the binder is removed. In the heating step, for example, at least a part of the solvent can be volatilized by heat-treating the semiconductor substrate at 100 ° C to 200 ° C. Further, for example, at least a part of the binder may be removed by heat-treating the semiconductor substrate at 200 ° C to 500 ° C. The heating step may be performed after the application of the n-type impurity diffusion layer forming composition and the application of the p-type impurity diffusion layer forming composition, or may be performed by imparting an n-type impurity diffusion layer forming composition and a p-type impurity diffusion layer. The two are then carried out together.

Then, the n-type impurity diffusion layer and the p-type impurity diffusion layer are formed by heat-treating the semiconductor substrate to which the composition is formed by the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer. The n-type impurity is diffused from the n-type impurity diffusion layer forming composition imparted to the first region into the semiconductor substrate by heat treatment, and the p-type impurity is diffused from the p-type impurity diffusion layer forming composition imparted to the second region to the semiconductor An n-type impurity diffusion layer and a p-type impurity diffusion layer are formed in the substrate, respectively. In the present invention, the n-type impurity diffusion layer and the p-type impurity diffusion layer are formed into a desired shape with high precision by using the n-type impurity diffusion layer formation composition and the p-type impurity diffusion layer formation composition. Further, even if a protective layer to be described later is not provided, it is possible to suppress formation of an n-type impurity diffusion layer or a p-type impurity diffusion layer in a region where the impurity diffusion layer is not required to be formed.

The heat treatment temperature is not particularly limited as long as the n-type impurity diffusion layer and the p-type impurity diffusion layer can be formed, and is preferably 800° C. or higher and 1100° C. or lower, more preferably 850° C. or higher and 1100° C. or lower. It is 900 ° C or more and 1100 ° C or less.

Although the glass layer remains on the semiconductor substrate on which the n-type impurity diffusion layer and the p-type impurity diffusion layer are formed as described above, it is preferable to remove the glass layer. The removal of the glass layer can be carried out by a known method such as a method of immersing in an acid such as hydrofluoric acid or a method of immersing in an alkali such as caustic soda.

It is preferable that a passivation layer is formed on the back side of the semiconductor substrate after the formation of the n-type impurity diffusion layer and the p-type impurity diffusion layer. As the passivation layer, a tantalum oxide layer, a tantalum nitride layer, a layer in which the layers are overlapped, or the like can be used. When the passivation layer is an oxide layer of tantalum, it can be formed by a thermal oxidation method such as dry thermal oxidation, wet thermal oxidation, or vapor thermal oxidation using a deposition method such as a normal pressure CVD method using decane gas and oxygen. In the case where the passivation layer is a nitride layer of tantalum, it can be formed by a plasma CVD method using decane gas, ammonia gas, and nitrogen gas. The surface of the semiconductor substrate may also be cleaned by a method known from the prior art before the formation of the passivation layer.

Next, it is preferable to form an anti-reflection film on the surface on the side on which the texture structure of the semiconductor substrate is formed. As the antireflection film, for example, a nitride film formed by a plasma CVD method can be used.

Next, an electrode is formed on each of the n-type impurity diffusion layer and the p-type impurity diffusion layer formed as described above. Specifically, for example, first, a part of the surface of each of the n-type impurity diffusion layer and the p-type impurity diffusion layer is exposed by removing a part of the passivation layer formed on the back surface of the semiconductor substrate. The removal of the passivation layer can be carried out by a method known from the prior art. Further, an n-electrode is formed on the surface of the exposed n-type impurity diffusion layer, and a p-electrode is formed on the surface of the exposed p-type impurity diffusion layer, thereby producing a back electrode type solar cell element. The n-electrode and the p-electrode can be formed by applying a silver-containing electrode material to each of the exposed surfaces of the n-type impurity diffusion layer and the p-type impurity diffusion layer, followed by drying and/or calcination. Alternatively, an n-electrode and a p-electrode may be formed by a vapor deposition method.

In the present invention, since the n-type impurity and the p-type impurity are bonded to the element in the glass particle or incorporated into the glass, it is possible to suppress diffusion to a region where the n-type impurity and the p-type impurity are not diffused during thermal diffusion. Further, by forming a layer containing a compound, the inhibitory effect can be further improved. [Examples]

Hereinafter, the invention will be specifically described by way of examples, but the invention is not limited to the examples. In addition, unless otherwise specified, reagents are used for chemicals. And "parts" and "%" are quality benchmarks.

[Example 1] 10 g of glass particles having a spherical shape, an average particle diameter of 0.25 μm, and a softening temperature of about 800 ° C were respectively used (P ₂ O ₅ , SiO ₂ and CaO as main components, and the content ratio) 50%, 43%, and 7%), 4 g of ethyl cellulose, and 86 g of terpineol were mixed and paste-formed to prepare an n-type impurity diffusion layer-forming composition. Then, 20 g of glass particles having a spherical shape, an average particle diameter of 1.5 μm, and a softening temperature of about 810 ° C (including B ₂ O ₃ , SiO ₂ , CaO, MgO, and BaO as main components) were contained. The ratios were 30%, 40%, 10%, 10%, and 10%), 4 g of ethyl cellulose, and 76 g of terpineol were mixed and paste-formed to prepare a p-type impurity diffusion layer-forming composition.

The shape of the glass particles can be determined by observation using a scanning electron microscope (Hitachi High-Tech Co., Ltd., TM-1000 type). The average particle diameter of the glass can be calculated using a laser scattering diffraction particle size distribution measuring apparatus (Beckman Coulter Co., Ltd., LS 13 320 type, measuring wavelength: 632 nm). The softening point of the glass can be determined by a differential heat (DTA) curve using a differential heat/thermal weight synchronous measuring device (Shimadzu Corporation, DTG-60H type).

Next, the oxide of cerium was formed into a thickness of 300 nm on the entire surface of the ruthenium substrate by a normal pressure CVD method as a layer containing a compound. Then, on the surface of the substrate on which the cerium oxide was formed, the n-type impurity diffusion layer forming composition was applied in a line shape by screen printing, and dried at 150 ° C for 10 minutes. Then, the surface of the tantalum substrate coated with the n-type impurity diffusion layer forming surface of the composition is the same surface, and the space is not in contact with the region where the composition is formed by the n-type impurity diffusion layer, by the wire. The p-type diffusion layer forming composition was applied in a line shape by net printing, and dried at 150 ° C for 10 minutes. Then, a debonding treatment was performed at 350 ° C for 3 minutes. Next, heat treatment was performed in the air at 950 ° C for 10 minutes to diffuse n-type impurities and p-type impurities into the germanium substrate to form an n-type impurity diffusion layer and a p-type impurity diffusion layer. Then, the glass layer remaining on the surface of the tantalum substrate is removed by hydrofluoric acid.

Next, the diffusion state of the impurities on the ruthenium substrate was confirmed by SIMS (Secondary Ion Mass Spectrometry) measurement. At a portion coated with the n-type impurity diffusion layer forming composition, P (phosphorus) was diffused from the surface to a depth of about 0.7 μm. Further, B (boron) diffused from the surface to a depth of about 0.6 μm at a portion coated with the p-type impurity diffusion layer forming composition. On the other hand, neither P (phosphorus) nor B (boron) diffused to the portion where the impurity diffusion layer forming composition was not applied. The SIMS measurement was carried out using IMS-7F (AMETEK Co., Ltd. CAMECA Division) and using O ₂ ⁺ and Cs ⁺ as primary ions.

[Example 2] In Example 1, an oxide film of tantalum having a thickness of 200 nm was formed in advance by wet thermal oxidation on the entire surface of the tantalum substrate instead of forming an oxide film of tantalum by an atmospheric pressure CVD method. An n-type impurity diffusion layer and a p-type impurity diffusion layer were formed in the same manner as in Example 1 except that the layer containing the compound was used. Then, the glass layer remaining on the surface of the tantalum substrate is removed by hydrofluoric acid.

Next, the diffusion state of the impurities in the ruthenium substrate was confirmed by the same SIMS measurement as described above. At a portion coated with the n-type impurity diffusion layer forming composition, P (phosphorus) was diffused from the surface to a depth of about 0.7 μm. Further, B (boron) diffused from the surface to a depth of about 0.6 μm at a portion coated with the p-type impurity diffusion layer forming composition. On the other hand, neither P (phosphorus) nor B (boron) diffused to the portion where the impurity diffusion layer forming composition was not applied.

[Example 3] The p-type impurity diffusion layer forming composition produced by the method described in Example 1 was applied to a surface of a tantalum substrate by wire printing, and was applied at 150 ° C for 10 minutes. dry. This was heat-treated at 950 ° C for 10 minutes in nitrogen to diffuse the p-type impurity into the ruthenium substrate to form a p-type impurity diffusion layer. Then, the glass layer remaining on the surface of the crucible substrate is removed by hydrofluoric acid. Thereafter, the oxide film of ruthenium was formed into a thickness of 200 nm by a dry thermal oxidation method over the entire surface of the tantalum substrate on which the surface of the p-type impurity diffusion layer was formed, as a layer containing a compound. Then, the surface of the tantalum substrate on which the surface of the p-type impurity diffusion layer is formed is the same, and is spaced apart from the p-type impurity diffusion layer region, and the n-type impurity diffusion layer is formed by screen printing. The material was applied in a linear form and dried at 150 ° C for 10 minutes. Then, a debonding treatment was performed at 350 ° C for 3 minutes. Next, heat treatment was performed in the air at 950 ° C for 10 minutes to diffuse n-type impurities into the ruthenium substrate to form an n-type impurity diffusion layer. Then, the glass layer remaining on the surface of the tantalum substrate is removed by hydrofluoric acid.

Next, the diffusion state of the impurities in the ruthenium substrate was confirmed by the same SIMS measurement as described above. At a portion coated with the n-type impurity diffusion layer forming composition, P (phosphorus) was diffused from the surface to a depth of about 0.7 μm. Further, B (boron) diffused from the surface to about 0.6 μm at a portion coated with the p-type impurity diffusion layer forming composition. On the other hand, neither P (phosphorus) nor B (boron) diffused to the portion where the impurity diffusion layer forming composition was not applied.

[Production of Solar Cell Element] An n-electrode was formed on the n-type impurity diffusion layer of the germanium substrate on which the n-type impurity diffusion layer and the p-type impurity diffusion layer were formed by the conventional methods in the first to third embodiments, respectively. A p-electrode was formed on the p-type impurity diffusion layer to fabricate a back electrode type solar cell element. The obtained back electrode type solar cell elements all exhibited good light conversion characteristics.

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Claims (7)

A method for producing a solar cell element, comprising: a step of forming a composition by providing an impurity diffusion layer on a surface of a semiconductor substrate via a layer containing a compound containing an n-type impurity or p Glass particles of a type impurity; a dispersion medium; a heat diffusion step of heat-treating a semiconductor substrate to which the composition for forming the impurity diffusion layer is formed to form an impurity diffusion layer; and forming an electrode in a region where the impurity diffusion layer is formed. A method for producing a solar cell element, comprising: a step of forming an n-type impurity diffusion layer forming composition on a first region of one surface of a semiconductor substrate, wherein the n-type impurity diffusion layer forming composition contains an n-type impurity a glass powder or a dispersion medium; a step of forming a p-type impurity diffusion layer forming composition on a surface of the semiconductor substrate on which the first region is provided and a second region other than the first region, the p-type impurity diffusion The layer forming composition contains a glass powder containing a p-type impurity, a dispersion medium, and heat-treats the semiconductor substrate to which the n-type impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition are applied to form an n-type impurity diffusion layer. And a thermal diffusion step of the p-type impurity diffusion layer; a step of forming an electrode in each of the first region in which the n-type impurity diffusion layer is formed and the second region in which the p-type impurity diffusion layer is formed; and is selected from the n At least one of the group consisting of the impurity diffusion layer forming composition and the p-type impurity diffusion layer forming composition is imparted to the semiconductor via a layer containing a compound On the body substrate. The method for producing a solar cell element according to the above aspect, wherein the layer containing the compound is a layer of an oxide or a nitride. The method for producing a solar cell element according to any one of claims 1 to 3, wherein the n-type impurity comprises a group selected from the group consisting of P (phosphorus) and Sb (锑). At least one element. The method for producing a solar cell element according to any one of claims 1 to 4, wherein the p-type impurity is selected from the group consisting of B (boron), Al (aluminum), and Ga (gallium). At least one element of the group consisting of. The method for producing a solar cell element according to any one of claims 1 to 5, wherein the glass powder containing the n-type impurity contains a material selected from the group consisting of P ₂ O ₃ , P ₂ O ₅ and Sb At least one of the group consisting of ₂ O ₃ containing an n-type impurity, and selected from the group consisting of SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO At least one glass component substance in the group consisting of CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ and MoO ₃ . The method for producing a solar cell element according to any one of claims 1 to 6, wherein the glass powder containing the p-type impurity contains a material selected from the group consisting of B ₂ O ₃ , Al ₂ O ₃ and Ga At least one of the groups consisting of ₂ O ₃ containing a p-type impurity, and selected from the group consisting of SiO ₂ , K ₂ O, Na ₂ O, Li ₂ O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO At least one glass component substance in the group consisting of CdO, V ₂ O ₅ , SnO, ZrO ₂ , TiO ₂ and MoO ₃ .