TW201715372A - Touch display panel and pixel structure - Google Patents

Abstract

A touch display panel includes a substrate, a sensing electrode array layer, a bottom metal layer and an active device layer. The sensing electrode array layer is disposed on the substrate and includes a plurality of sensing electrodes separated from one another and arranged in an array. The bottom metal layer is disposed on the substrate and includes a plurality of signal lines. One signal line is used for transmitting a signal between one sensing electrode and a driving circuit. The active device layer is disposed on the substrate and is located between the sensing electrode array layer and the bottom metal layer.

Description

Touch display panel and pixel structure

The present invention relates to a display device, and more particularly to a touch display panel and a pixel structure.

In recent years, various electronic products have continuously integrated touch elements into display panels to omit the space required for keyboards or buttons, and to expand the configurable area of the screen. Therefore, the application of the touch display panel is becoming more and more popular and extensive. In general, the touch display panel can be externally attached to the display panel by embedding a sensing component, such as a sensing electrode, in the display panel or a sensing component, such as a flat touch panel.

The touch sensing component is built in the display panel to reduce the thickness of the touch display panel, and the assembly of the electronic product is further simplified. However, under the built-in design, the relevant lines of the sensing components need to be concentrated in the interior of the display panel, which causes an increase in the display panel fabrication process and affects the electrical properties of the sensing components. For example, the coupling between the sensing element and other components or circuits increases the load of the sensing element, which affects the sensing capability and sensing quality of the sensing element. Therefore, the touch display panel of the built-in sensing component needs to consider how to integrate the sensing component into the display panel without complicating the manufacturing process and maintaining the performance of the sensing component.

The invention provides a touch display panel, which can reduce the parasitic capacitance received by the sensing electrode.

The invention provides a pixel structure, which can integrate the sensing electrodes and related circuits in the pixel structure under the existing manufacturing process, and can reduce the parasitic capacitance received by the sensing electrodes.

The touch display panel of the present invention comprises a substrate, a sensing electrode array layer, a bottom metal layer and an active device layer. The sensing electrode array layer is disposed on the substrate and includes a plurality of sensing electrodes, and the sensing electrodes are separated from each other and arranged in an array. The bottom metal layer is disposed on the substrate and includes a plurality of signal lines. One of the signal lines transmits a signal between one of the sensing electrodes and a driving circuit. The active device layer is disposed on the substrate and located between the sensing electrode array layer and the bottom metal layer.

In an embodiment of the invention, the active device layer includes a plurality of active components, and the active components are arranged in an array. The bottom metal layer further includes a plurality of light shielding pads, and the light shielding pads overlap the active elements in a direction away from the substrate. One of the sensing electrodes overlaps N active elements in a direction toward the substrate, and N is a positive integer greater than 1 and less than the total number of active components. The active device layer further includes a plurality of scan lines and a plurality of data lines. One of the scan lines is connected to one of the active components to control the opening and closing of one of the active components. One of the data lines is connected to one of the active components. When one of the active components is turned on, one of the active components allows the display signal of one of the data lines to pass, and one of the signal lines extends in a direction parallel to the extending direction of one of the data lines.

In an embodiment of the invention, the touch display panel further includes a plurality of connection conductors. One of the connecting conductors is used to electrically connect one of the signal lines to one of the sensing electrodes.

In an embodiment of the invention, one end of one of the signal lines extends beyond the sensing electrode located at the outermost periphery.

In an embodiment of the invention, the touch display panel further includes a display medium layer, and the display medium layer is disposed on the sensing electrode array layer.

The pixel structure of the present invention includes a substrate, a sensing electrode, a signal line, an active component, a scan line, and a data line. Both the signal line and the sensing electrode are located on the substrate. The sensing electrode is electrically connected to the signal line, and the signal line transmits a signal between the sensing electrode and a driving circuit. The active component is located between the signal line and the sensing electrode. The scan line connects the active components to control the opening and closing of the active components. The data line is connected to the active component. When the active component is turned on, the active component allows the display signal on the data line to pass. The direction of the signal line extends parallel to the direction in which the data line extends.

In an embodiment of the invention, the signal line overlaps the data line in a direction away from the substrate.

In an embodiment of the invention, the signal line has a branch, and the branch does not overlap the data line in a direction away from the substrate.

In an embodiment of the invention, the pixel structure further includes a light shielding pad, and the light shielding pad overlaps the active component in a direction away from the substrate. The light shielding pad and the signal line are composed of the same film layer.

In an embodiment of the invention, the active device includes a gate and a semiconductor layer. The semiconductor layer comprises a channel region, a source region and a drain region, wherein the gate overlaps the channel region in a direction toward the substrate, the channel region is located between the source region and the drain region, and the gate is connected to the scan line and the source The area is connected to the data line.

In an embodiment of the invention, the pixel structure further includes a bottom insulating layer, a gate insulating layer, an interlayer insulating layer, a flat layer, a protective layer, and a pixel electrode. The bottom insulating layer covers the signal line, and the semiconductor layer is disposed on the bottom insulating layer. The gate insulating layer is disposed between the semiconductor layer and the gate. The interlayer insulating layer covers the gate, and the data line is disposed on the interlayer insulating layer. The flat layer covers the data line, and the sensing electrode is disposed on the flat layer. The protective layer is located between the pixel electrode and the sensing electrode.

In an embodiment of the invention, the pixel structure further includes a connecting conductor. The bottom insulating layer has a first opening, the gate insulating layer has a second opening, and the interlayer insulating layer has a third opening. The connecting conductor passes through the first opening, the second opening and the third opening and contacts the signal line. Additionally, the flat layer can have a fourth opening. The sensing electrode passes through the fourth opening and contacts the connecting conductor.

In an embodiment of the invention, the protective layer has a fifth opening. The sensing electrode passes through the fourth opening and the fifth opening and contacts the connecting conductor.

In an embodiment of the invention, the pixel electrode is located between the protective layer and the planar layer.

In an embodiment of the invention, the sensing electrode is located between the protective layer and the planar layer.

Based on the above, in the touch display panel of the embodiment of the invention, the signal line can be made of a material with a lower resistance value, and the sensing electrode is limited by the coupling capacitance of the signal line, and can have an ideal touch quality, and the touch display The panel has the ideal yield and quality.

The above described features and advantages of the invention will be apparent from the following description.

1 is a top plan view of a touch display panel according to an embodiment of the invention, and FIG. 2 is a partial cross-sectional view of the touch display panel according to an embodiment of the invention. In FIGS. 1 and 2 , the touch display panel 100 includes a substrate SUB1 , a substrate SUB 2 , a display dielectric layer DM , a sensing electrode array layer 110 , a bottom metal layer 120 , and an active device layer 130 . The display dielectric layer DM is sandwiched between the substrate SUB1 and the substrate SUB2, and the sensing electrode array layer 110, the bottom metal layer 120, and the active device layer 130 are disposed between the display medium layer DM and the substrate SUB1. The touch display panel 100 may further include other components such as a color filter layer, a counter electrode layer, and the like. In addition, in order to maintain the thickness of the display medium layer DM, the touch display panel 100 may be provided with a support (not shown) between the substrate SUB1 and the substrate SUB2 in some embodiments. However, these components can be selectively set according to actual needs.

The sensing electrode array layer 110 is disposed on the substrate SUB1 and includes a plurality of sensing electrodes 112. The sensing electrodes 112 are spaced apart from each other and arranged in an array. Each of the sensing electrodes 112 is represented by a rectangular pattern in FIG. 1, but the shape of each sensing electrode 112 can be adjusted according to different needs. For example, the shape of each sensing electrode 112 may be a polygonal pattern other than a rectangle, a comb pattern, or the like, or each sensing electrode 112 has a curved outer contour. In addition, the shape and area of these sensing electrodes 112 may not coincide.

The sensing electrodes 112 of the sensing electrode array layer 110 can provide a function of touch sensing. Specifically, each sensing electrode 112 can perform mutual capacitive touch sensing or self-capacitive touch sensing. In terms of mutual-capacitive touch sensing, two adjacent sensing electrodes 112 may be one of the scanning electrodes and one of the reading electrodes. At this time, the scan electrode is configured to receive the touch scan signal, and the read electrode is configured to read the sensed capacitor when the corresponding scan electrode receives the touch scan signal. In another embodiment, scan electrodes may be disposed outside the sensing electrode array layer 110 in the touch display panel 100, and all the sensing electrodes 112 of the sensing electrode array layer 110 may serve as read electrodes to achieve mutual compatibility. Touch sensing function. In another embodiment, a read electrode may be disposed outside the sensing electrode array layer 110 in the touch display panel 100, and all the sensing electrodes 112 of the sensing electrode array layer 110 may serve as scan electrodes to achieve mutual compatibility. Touch sensing function. In the case of self-capacitive touch sensing, each sensing electrode 112 can directly read out the capacitance sensed by itself to implement touch sensing. In other words, all of the sensing electrodes 112 of the sensing electrode array layer 110 do not need to define in which mode the touch sensing is performed.

In this embodiment, all the sensing electrodes 112 of the sensing electrode array layer 110 are substantially filled in the display area of the touch display panel 100, and the sensing electrodes 112 can be shared as well as the touch function. An electrode to provide an electric field that drives the display medium layer DM. Moreover, all of the sensing electrodes 112 of the sensing electrode array layer 110 can alternately perform both display and touch sensing functions. When the display function is performed, all the sensing electrodes 112 can be input with a common potential, and when the touch function is performed, the sensing electrodes 112 can be input into the touch scanning signals for touch or used for reading. Capacitance.

In order to implement the touch sensing function, the sensing electrodes 112 need to be independent of each other on the electrical signal. Thus, the profiles of these sensing electrodes 112 are spaced apart from one another without physical contact. In addition, the signals of these sensing electrodes 112 must also be transmitted independently. Therefore, the bottom metal layer 120 is disposed on the substrate SUB1 and may include a plurality of independent signal lines 122 to be electrically connected to the sensing electrodes 112, respectively. Specifically, one of the signal lines 122 is used to transmit a signal between one of the sensing electrodes 112 and a driving circuit 10. That is to say, the touch scan signal emitted by the driving circuit 10 can be transmitted to the sensing electrode 112 as a scanning electrode through one of the signal lines 122. Further, the signal sensed by the sensing electrode 112 as the read electrode can be transmitted to the driving circuit 10 through one of the signal lines 122.

In order to be able to transmit signals to the driver circuit 10, one end of the signal line 122 can extend beyond the sensing electrode 112 at the outermost periphery. Therefore, the signal line 122 is electrically connected to only one of the sensing electrodes 112, but the signal line 122 can traverse the sensing electrode 112 that is not electrically connected thereto. The coupling between the signal line 122 and the sensing electrode 112 not electrically connected thereto may cause parasitic capacitance and impose a burden on the signal line 122 and the sensing electrode 112. Such parasitic capacitance effects may affect the sensing capability and sensing sensitivity of the sensing electrode 112.

In this embodiment, the active device array layer 130 is disposed on the substrate SUB1 and between the sensing electrode array layer 110 and the bottom metal layer 120. Therefore, the spacing between the signal lines 122 of the bottom metal layer 120 and the sensing electrodes 112 of the sensing electrode array layer 110 helps to reduce the coupling between the two to reduce the coupling effect on the signal line 122 and the sense. The burden caused by the electrode 112. In addition, the components in the active device layer 130 can further reduce the coupling effect of the sensing electrodes 112 as the shielding between the signal lines 122 of the bottom metal layer 120 and the sensing electrodes 110 of the sensing electrode array layer 110. The burden caused by the signal line 122. In this embodiment, since the active device layer 130 is located between the signal line 122 of the bottom metal layer 120 and the sensing electrode 112 of the sensing electrode array layer 110, the touch display panel 100 may further include a plurality of connecting conductors 140. The sensing electrode 112 is connected to the corresponding signal line 122.

The active device array layer 130 includes a plurality of active components 132, and the active components 132 are arranged in an array. In the embodiment, the active elements 132 are all located in the display area of the touch display panel 100 as a driving element for displaying the pixel unit. At the same time, the sensing electrodes 112 are also disposed in the display area. The single sensing electrode 112 may overlap the N active elements 132 in a direction toward the substrate SUB1, and N is a positive integer greater than 1 and N is less than the total number of active elements 132. When the contour of the sensing electrode 122 is projected toward the substrate SUB1, the active element 132 will be positioned in the projection of the sensing electrode 122. Further, the single sensing electrode 112 may overlap N display pixel units in a direction toward the substrate SUB1. However, the layout resolution of the sensing electrode 122 can be adjusted according to the resolution required by the touch function.

The active component 132 is typically a thin film transistor and utilizes a semiconductor material to effect conduction and disconnection. When most of the semiconductor material is exposed to light, an induced current may be generated to cause an influence on the element characteristics of the active element 132, such as an increase in leakage current. Therefore, the bottom metal layer 120 of the touch display panel 100 further includes a plurality of light shielding pads 124 , and the light shielding pads 124 correspondingly overlap the active elements 132 in a direction away from the substrate SUB1 . That is, when the outline of the light shielding pad 124 is projected away from the substrate SUB1, the active element 132 is positioned in the projection of the light shielding pad 124. With the arrangement of the light-shielding pads 124, the active element 132 can be protected from light. As such, the active component 132 can be provided with stable component characteristics.

In this embodiment, the light shielding pad 124 and the signal line 122 are made of the same film layer. The fabrication of the light-shielding pad 124 and the signal line 122 includes forming a metal layer on the substrate SUB1 and patterning the metal layer using a photomask to simultaneously form the signal line 122 and the light-shielding pad 124. As such, the signal line 122 does not need to be fabricated with other metal layers, and the design of the bottom metal layer 120 including the signal line 122 and the light shielding pad 124 does not complicate the manufacturing process of the touch display panel 100. The bottom metal layer 120 is closer to the substrate SUB1 than the active device layer 130 in this embodiment. In such a stacking sequence, the bottom metal layer 120 is fabricated before the active device layer 130 has been formed. Therefore, the process temperature at which the underlying metal layer 120 is formed may be higher than the withstand temperature of the constituent materials of the active device layer 130. Since the bottom metal layer 120 can be fabricated using higher temperature fabrication conditions, there is a greater opportunity to select low resistance materials. If the signal line 122 has a low resistance value, it can have a narrow line width, so that the coupling capacitance of the signal line and other conductors is low, and sufficient signal transmission effect is still maintained. In addition, the bottom metal layer 120 is closer to the substrate SUB1 and a plurality of film layers are stacked on the bottom metal layer 122. Therefore, the signal line 122 of the bottom metal layer 120 is relatively difficult to be scratched during subsequent fabrication.

FIG. 3 is a schematic diagram of an active device layer of a touch display panel according to an embodiment of the invention. Referring to FIG. 3, the active device layer 130 includes a plurality of scan lines SL, a plurality of data lines DL, and a plurality of active elements 132. One of the scan lines SL is connected to one of the active elements 132 to control the opening (turning on) and the closing (opening) of the active element 132. One of the data lines DL is connected to the active element 132. When the active component 132 is turned on by the control of the corresponding scan line SL, the active component 132 can allow the display signal on the corresponding data line DL to pass. When the active device layer 130 of FIG. 3 is applied to the touch display panel 100 of FIG. 1 , the extending direction of the signal line 122 in FIG. 1 may be set to be parallel to the extending direction of the data line DL or parallel to the extending direction of the scanning line DL. .

4 is a schematic diagram of a portion of a sensing electrode and a portion of a signal line in a touch display panel according to an embodiment of the invention. According to the related description of FIG. 1, each of the signal lines 122 electrically connects one of the sensing electrodes 112, but in a spatial configuration, the signal line 122 can traverse the sensing electrodes 112 not connected thereto. In FIG. 4, the signal line 122a is electrically connected to the sensing electrode 112a through at least one contact structure (four in the following embodiments, but not limited thereto), and the signal line 122b is electrically connected through at least one contact structure. The sensing electrode 112b is connected. At the same time, the signal line 122a will traverse the sensing electrode 112b but is not electrically connected to the sensing electrode 112b. In addition, an auxiliary line segment 122b' may be disposed on the extension line from which the signal line 122b extends toward the sensing electrode 112a. The auxiliary line segment 122b' is not connected to the signal line 122b and the auxiliary line segment 122b' is electrically connected to the sensing electrode 112b. Here, the contact structure may be a connection channel formed by combining one to a plurality of openings.

FIG. 5 is a schematic diagram of a portion of a sensing electrode and a portion of a signal line in a touch display panel according to another embodiment of the invention. In FIG. 5, the signal line 122a is electrically connected to the sensing electrode 112a through at least one contact structure, and the signal line 122b is electrically connected to the sensing electrode 112b through at least one contact structure. At the same time, the signal line 122a will traverse the sensing electrode 112b but is not electrically connected to the sensing electrode 112b. The signal line 122b extends toward the sensing electrode 112a and overlaps the sensing electrode 112a, but the signal line 122b is not electrically connected to the sensing electrode 112a. In this way, the extension length of the signal line 122a and the signal line 122b can be approximated.

FIG. 6 is a top plan view of a pixel structure according to an embodiment of the present invention. 7, 8, and 9 are schematic cross-sectional views of the pixel structure of FIG. 6 along lines I-I, II-II, and III-III. Referring to FIG. 6 to FIG. 9 , the pixel structure 200 can be applied to the touch display panel 100 of FIG. 1 and FIG. 2 and disposed on the substrate SUB1 to drive the display medium layer DM. The pixel structure 200 includes a sensing electrode 112, a signal line 122, an active element 132, a light shielding pad 124, a scan line SL, and a data line DL. The film layer of the signal line 122 and the light shielding pad 124 is located between the film layer where the active device 132 is located and the substrate SUB1, and the film layer where the active device 132 is located is located between the film layer where the sensing electrode 112 is located and the substrate SUB1. The signal line 122 is electrically connected to the sensing electrode 112 and used to transmit a signal between the sensing electrode 112 and the driving circuit 10 of FIG. The light shielding pad 124 overlaps the active element 132 in a direction away from the substrate SUB1. The scan line SL is connected to the active element 132 to control the opening and closing of the active element 132. The data line DL is connected to the active element 132. The direction in which the signal line 122 extends is parallel to the direction in which the data line DL extends. Taking the substrate SUB1 disposed in FIG. 2 as an example, the signal line 122 overlaps the data line DL in a direction away from the substrate SUB1. However, the signal line 122 has a branch 122E, and the branch 122E does not overlap the data line DL in a direction away from the substrate SUB1.

In addition, the pixel structure 200 may further include a pixel electrode PE that connects the active elements 132, and the pixel electrodes PE may overlap the sensing electrodes 112 in a direction toward the substrate SUB1. When the active component 132 is turned on, the active component 132 allows the display signal on the data line DL to pass to pass the display signal to the pixel electrode PE. At this time, the sensing electrode 112 is input to the common potential, and the voltage difference between the pixel electrode PE and the sensing electrode 112 forms a driving electric field for driving the display medium layer DM in FIG. Therefore, the sensing electrode 112 can function as a common electrode to achieve a display function.

In the present embodiment, the active device 132 includes the gate G and the semiconductor layer SE, and the gate G is substantially a portion where the scan line SL overlaps the semiconductor layer SE. The semiconductor layer SE includes a channel region CH, a source region S and a drain region D. In FIG. 6, the gate G overlaps the channel region CH in the direction toward the substrate SUB1, and the channel region CH is located between the source region S and the drain region D. The gate G is substantially made of a metal material as a part of the scanning line SL, so the gate G is connected to the scanning line SL. The source region S is connected to the data line DL, and the drain region D is electrically connected to the pixel electrode PE.

As can be seen from FIG. 7 to FIG. 9, the pixel structure 200 further includes a bottom insulating layer I1, a gate insulating layer I2, an interlayer insulating layer I3, a flat layer PL, and a protective layer PV. The bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3, the flat layer PL and the protective layer PV are all made of an insulating material for isolating the conductor elements in the pixel structure 200 to prevent the conductor elements from being lost due to the short circuit. The function is fixed.

The signal line 122 and the light shielding pad 124 are formed of the same film layer, such as the bottom metal layer 120 of FIGS. 1 and 2. The bottom insulating layer I1 covers the signal line 122 and the light shielding pad 124, and the semiconductor layer SE is disposed on the bottom insulating layer I1. The gate insulating layer I2 is stacked on the bottom insulating layer I1, and the semiconductor layer SE is disposed between the bottom insulating layer I1 and the gate insulating layer I2. A scan line SL including a gate G is disposed on the gate insulating layer I2. As such, the gate insulating layer I2 is interposed between the gate G and the semiconductor layer SE to make the two members non-electrically in direct contact with the body. In the present embodiment, the material of the semiconductor layer SE includes polycrystalline germanium, amorphous germanium, an organic semiconductor material, an oxide semiconductor material, or other material having semiconductor properties. The light shielding pad 124 overlaps the active element 132 in a direction away from the substrate SUB1, and the light shielding pad 124 overlaps at least the entirety of the channel area CH in a direction away from the substrate SUB1. In this way, the two sides of the channel region CH are respectively shielded by the gate G and the light shielding pad 124 and are not easily exposed to light, and may have stable characteristics.

The interlayer insulating layer I3 is overlaid on the gate insulating layer I2 and covers the scanning line SL including the gate G, and the data line DL is disposed on the interlayer insulating layer I3. The flat layer PL covers the data line DL, and the sensing electrode 112 is disposed on the flat layer PL. The protective layer PV is disposed on the flat layer PL. The sensing electrode 112 is disposed on the flat layer PL, and the pixel electrode PE is disposed on the protective layer PV. Therefore, the protective layer PV is located between the pixel electrode PE and the sensing electrode 112.

An active layer 132 composed of a gate G and a semiconductor layer SE, a gate insulating layer I1 between the gate G and the semiconductor layer SE, a scan line SL, a data line DL, an interlayer insulating layer between the scan line SL and the data line DL The entirety of I3 and the flat layer PL covering the data line DL can be regarded as the active device layer 130 in FIGS. 1 and 2. However, the active component layer 130 may alternatively include other components. In this embodiment, the active device layer 130 including the plurality of film layers is disposed between the sensing electrode 112 and the signal line 122 to help reduce the coupling between the sensing electrode 112 and the signal line 122 to reduce the signal line 122 and The parasitic capacitance experienced by the electrode 112 is sensed. At the same time, the data line DL is located between the sensing electrode 112 and the signal line 122, so the data line DL can provide shielding effect and further prevent the parasitic capacitance between the sensing electrode 112 and the signal line 122 from burdening the sensing electrode 112. Therefore, the sensing electrode 112 can provide good sensing capability and ideal sensing sensitivity when performing touch sensing.

In order to electrically connect the signal line 122 to the sensing electrode 112, as shown in FIG. 8, the bottom insulating layer I1 has a first opening O1, the gate insulating layer I2 has a second opening O2, and the interlayer insulating layer I3 has a third opening. O3, and the first opening O1, the second opening O2, and the third opening O3 overlap the branch 122E of the signal line 122 in the direction toward the substrate SUB1. As such, the first opening O1, the second opening O2, and the third opening O3 are disposed such that the branch 122E of the signal line 122 has a portion that is not covered by the bottom insulating layer I1, the gate insulating layer I2, and the interlayer insulating layer I3. The pixel structure 200 further includes a connection conductor 140, and the connection conductor 140 passes through the first opening O1, the second opening O2 and the third opening O3 and contacts the branch 122E of the signal line 122. At the same time, the flat layer PL has a fourth opening O4 such that the flat layer PL exposes the connection conductor 140, and the sensing electrode 112 passes through the fourth opening O4 to contact the connection conductor 140. It should be understood that the connecting conductors 140 pass through the plurality of branches 122E that are in contact with the signal lines, and it is not necessarily required that all of the openings overlap the branches 122E of the signal lines in the direction toward the substrate SUB1. In the case where different openings are prepared by a plurality of etching processes, the openings sometimes overlap partially or not at all.

As shown in FIG. 9, in order to electrically connect the data line DL to the source region S of the semiconductor layer SE, the gate insulating layer I2 has a fifth opening O5, and the interlayer insulating layer I3 has a sixth opening O6, a fifth opening O5 and a sixth opening. O6 causes both the gate insulating layer I2 and the interlayer insulating layer I3 to expose the source region S, and the data line DL passes through the fifth opening O5 and the sixth opening O6 and contacts the source region S.

In addition, in order to electrically connect the pixel electrode PE to the drain region D, the gate insulating layer I2 has a seventh opening O7, the interlayer insulating layer I3 has an eighth opening O8, and the seventh opening O7 and the eighth opening O8 make the gate insulating layer I2 The drain region D is exposed to both the interlayer insulating layer I3. The pixel structure 200 further includes a drain connection conductor CD, and the drain connection conductor CD passes through the seventh opening O7 and the eighth opening O8 and contacts the drain region D. Further, the flat layer PL has a ninth opening O9, the protective layer PV has a tenth opening O10, and the ninth opening O9 and the tenth opening O10 cause both the flat layer PL and the protective layer PV to expose the drain connection conductor CD, and the pixel electrode The PE passes through the ninth opening O9 and the tenth opening O10 and contacts the drain connection conductor CD. At this time, the sensing electrode 112 has the electrode opening A112, and the area of the ninth opening O9 and the area of the tenth opening O10 are completely within the area of the electrode opening A112, so as to prevent the sensing electrode 112 from being directly electrically connected to the pixel electrode PE. .

In this embodiment, the first opening O1, the second opening O2, the third opening O3, the fifth opening O5, the sixth opening O6, the seventh opening O7 and the eighth opening O8 can be used to form the data line DL and the connection guide Before the 140 is connected to the drain with the drain, the conductors are formed by the same patterning step, but are not intended to limit the invention. For example, in a possible embodiment, different openings can be made by a plurality of patterning steps. Further, the data line DL, the connection via 140, and the drain connection conductor CD may be patterned by the same metal layer. In addition, the fourth opening O4 and the ninth opening O9 may be fabricated by the same patterning step. In this way, although a plurality of film layers are spaced apart between the sensing electrode 112 and the signal line 122, the openings provided for realizing the electrical connection of the two members need not be fabricated in separate manufacturing steps. Therefore, the pixel structure 200 can be fabricated in an existing process without adding a production process.

In this embodiment, the material of the bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3 and the protective layer PV may be tantalum oxide, tantalum nitride, hafnium oxynitride or other insulating materials. The material of the flat layer PL may be an organic insulating material or other insulating materials that can be stacked with a sufficient film thickness. The thickness of the flat layer PL may be greater than the bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3, and the protective layer PV to provide a desired planarization effect.

The signal line 122 is completed before the flat layer PL is formed, and the signal line 122, the active element 132, the scan line SL, and the data line DL are all covered by the flat layer PL. The height difference caused by the signal line 122, the active element 132, the scan line SL, and the data line DL in the stacking direction of the film layer can be flattened by the flat layer PL, which helps to improve the touch with the pixel structure 200. The production yield of the display panel. The touch display panel 100 is generally required to be supported between the substrate SUB1 and the substrate SUB2 to maintain the thickness of the display medium layer DM by using a support (not shown). . At this time, the better the planarization effect of the flat layer PL is, the more stable the support can be between the substrate SUB1 and the substrate SUB2. In contrast, if the support abuts against the uneven surface, the support is likely to slip so that the assembly effect between the substrate SUB1 and the substrate SUB2 is not good. In addition, when applied to the touch display panel 100, a side of the pixel structure 200 contacting the display medium layer DM may be provided with an alignment layer (not shown) to control the arrangement of the display medium material in the display medium layer DM, such as liquid crystal. material. The alignment of the alignment layer can be achieved by means of friction. When the flatness of the flat layer PL is poor, the frictional force and the rubbing direction of the surface of the alignment layer are uneven, resulting in uneven alignment. At this time, the display effect of the touch display panel 100 may not meet the demand. Therefore, the better the planarization effect of the flat layer PL can ensure the yield of the touch display panel 100.

FIG. 10 is a top plan view of a pixel structure according to another embodiment of the present invention. 11, FIG. 12 and FIG. 13 are schematic cross-sectional views of the pixel structure of FIG. 10 taken along lines IV-IV, V-V and VI-VI. Referring to FIG. 10 to FIG. 13 , the pixel structure 300 can be applied to the touch display panel 100 of FIGS. 1 and 2 to drive the display medium layer DM. The pixel structure 300 includes the sensing electrodes 112, the signal lines 122, the active elements 132, the light shielding pads 124, the scanning lines SL, and the data lines DL in FIGS. 1 and 2. The signal line 122 is electrically connected to the sensing electrode 112, and the signal line 122 is used to transmit a signal between the sensing electrode 112 and the driving circuit 10 of FIG. The scan line SL is connected to the active element 132 to control the opening and closing of the active element 132. The data line DL is connected to the active element 132. The direction in which the signal line 122 extends is parallel to the direction in which the data line DL extends. The signal line 122 overlaps the area of the data line DL in a direction away from the substrate SUB1. However, the signal line 122 has a branch 122E, and the branch 122E does not overlap the data line DL in a direction away from the substrate SUB1. The area of the light shielding pad 124 overlaps the active element 132 in a direction away from the substrate SUB1. Additionally, the pixel structure 300 can also include a pixel electrode PE that connects the active elements 132. The electrical connection relationship of the components in the pixel structure 300 is substantially the same as the pixel structure 200. Therefore, the constituent members of the active component 132 and the connection relationship between the active component 132 and the pixel electrode PE can refer to the related description of the pixel structure 200. I will not repeat them here. However, the stacking order of the sensing electrodes 112 and the pixel electrodes PE of the pixel structure 300 is different from the pixel structure 200.

As can be seen from FIG. 11 to FIG. 13, the pixel structure 300 further includes a bottom insulating layer I1, a gate insulating layer I2, an interlayer insulating layer I3, a flat layer PL, and a protective layer PV. The stacking order of the bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3, the flat layer PL, and the protective layer PV is substantially the same as that of the pixel structure 200. However, in the present embodiment, the pixel electrode PE is disposed on the flat layer PL. The protective layer PV is disposed on the pixel electrode PE, and the sensing electrode 112 is disposed on the protective layer PV, so the pixel electrode PE is located between the protective layer PV and the flat layer PL. In the present embodiment, the bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3, the flat layer PL, the active device 132, the scan line SL, and the data line DL may constitute the active device layer 130 in FIGS. 1 and 2. However, the active component layer 130 may alternatively include other components.

In this embodiment, at least the bottom insulating layer I1, the gate insulating layer I2, the interlayer insulating layer I3, the flat layer PL, the protective layer PV, and the active device are interposed between the film layer where the sensing electrode 112 is located and the film layer where the signal line 122 is located. 132, scan line SL and data line DL, which helps to reduce the coupling between the sensing electrode 112 and the signal line 122 to reduce the parasitic capacitance between the sensing electrode 112 and the signal line 122. At the same time, the data line DL is located between the sensing electrode 112 and the signal line 122, so the data line DL can provide a shielding function to further avoid the coupling between the sensing electrode 112 and the signal line 122 to the signal line 122 and the sensing electrode 112. Cause a burden. Therefore, the sensing electrode 112 can achieve good sensing sensitivity when performing touch sensing.

In order to electrically connect the signal line 122 to the sensing electrode 112, as shown in FIG. 12, the bottom insulating layer I1 has a first opening P1, the gate insulating layer I2 has a second opening P2, and the interlayer insulating layer I3 has a third opening. P3, and the first opening P1, the second opening P2 and the third opening P3 cause the bottom insulating layer I1, the gate insulating layer I2 and the interlayer insulating layer I3 to expose the branch 122E of the signal line 122. The pixel structure 300 further includes a connection conductor 140, and the connection conductor 140 passes through the first opening P1, the second opening P2 and the third opening P3 and contacts the branch 122E of the signal line 122. Meanwhile, the flat layer PL has a fourth opening P4 and the protective layer PV has a fifth opening P5, and the fourth opening P4 and the fifth opening P5 cause both the flat layer PL and the protective layer PV to expose the connection conductor 140, and the sensing electrode 112 passes through the fourth opening P4 and the fifth opening P5 and contacts the connection conductor 140. It should be understood that the connecting conductors 140 pass through the plurality of openings 122E that contact the signal lines, and it is not necessarily required that all of the openings expose the branches 122E of the signal lines. If different openings are prepared in a plurality of etching processes, the openings may be partially exposed or not exposed at all to the branch 122E of the signal line 122.

As can be seen from FIG. 13, in order to electrically connect the data line DL to the source region S of the semiconductor layer SE, the gate insulating layer I2 has a sixth opening P6, and the interlayer insulating layer I3 has a seventh opening P7, a sixth opening P6 and a seventh opening. P7 exposes the gate insulating layer I2 and the interlayer insulating layer I3 to the source region S, and the data line DL passes through the sixth opening P6 and the seventh opening P7 and contacts the source region S.

In addition, in order to electrically connect the pixel electrode PE to the drain region D, the gate insulating layer I2 has an eighth opening P8, the interlayer insulating layer I3 has a ninth opening P9, and the eighth opening P8 and the ninth opening P9 make the gate insulating layer I2 The drain region D is exposed to both the interlayer insulating layer I3. Also, the pixel structure 300 further includes a drain connection conductor CD, and the drain connection conductor CD passes through the eighth opening P8 and the ninth opening P9 and contacts the drain region D. Further, the flat layer PL has a tenth opening P10 which exposes the flat layer PL to the drain connection conductor CD, and the pixel electrode PE passes through the tenth opening P10 and contacts the drain connection conductor CD.

In the present embodiment, the data line DL, the connection via 140 and the drain connection conductor CD can be patterned from the same film layer. The first opening P1, the second opening P2, the third opening P3, the sixth opening P6, the seventh opening P7, the eighth opening P8 and the ninth opening P9 may be formed in the data line DL, the connection pole 140 and the drain connection conductor Before the CD, it was made by the same patterning step. In addition, the fourth opening P4 and the tenth opening P10 may be fabricated by the same patterning step. Although a plurality of film layers are spaced apart between the sensing electrode 112 and the signal line 122, the openings provided for the electrical connection of the two members need not be fabricated in separate fabrication steps. Therefore, the pixel structure 300 can be fabricated under an existing process without adding a production process. In addition, the pixel structure 300 can provide a desired planarization effect by using the flat layer PL as in the pixel structure 200 described above, and thus the touch display panel having the pixel structure 300 can have ideal quality and yield.

In summary, in the touch display panel and the pixel structure of the embodiment of the present invention, an active device layer is sandwiched between the sensing electrode and the signal line transmitting the signal of the sensing electrode, and the active device layer is composed of a plurality of layers. . Therefore, the coupling between the sensing electrode and the signal layer can be significantly reduced to help alleviate the burden on the signal line and the sensing electrode based on the parasitic capacitance of the sensing electrode. Moreover, the signal line in the embodiment of the present invention may overlap the scan line or the data line, and the scan line or the data line may be used as a shield between the signal line and the sensing electrode, thereby further reducing the possible possibility of the signal line to the sensing electrode. The parasitic capacitance caused. In this way, the sensing electrode can provide an ideal touch capability. In addition, since the signal line is made of a bottom metal layer, the flat layer can cover the signal line and the components in the active device layer, which makes the flat layer have an ideal flattening effect and also has the desired quality and yield of the touch display panel.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧Drive circuit
100‧‧‧Touch display panel
110‧‧‧Sensing electrode array layer
112, 112a, 112b‧‧‧ sensing electrodes
120‧‧‧ bottom metal layer
122, 122a, 122b‧‧‧ signal line
122b'‧‧‧Auxiliary line segment
122E‧‧‧ branch
124‧‧‧Lighting mat
130‧‧‧Active component layer
132‧‧‧Active components
140‧‧‧Connecting conductor
A112‧‧‧electrode opening
CD‧‧‧汲 connection conductor
CH‧‧‧ passage area
D‧‧‧Bungee Area
DL‧‧‧ data line
DM‧‧‧ display media layer
G‧‧‧ gate
Lines II, II-II, III-III, IV-IV, VV, VI-VI‧‧
I1‧‧‧ bottom insulation
I2‧‧‧ brake insulation
I3‧‧‧Interlayer insulation
O1~O10, P1~P10‧‧‧ openings
PE‧‧‧ pixel electrode
PL‧‧‧flat layer
PV‧‧‧ protective layer
S‧‧‧ Source Area
SE‧‧‧Semiconductor layer
SL‧‧‧ scan line
SUB1, SUB2‧‧‧ substrate

FIG. 1 is a top plan view of a touch display panel according to an embodiment of the invention. 2 is a partial cross-sectional view of a touch display panel according to an embodiment of the invention. FIG. 3 is a schematic diagram of an active device layer of a touch display panel according to an embodiment of the invention. 4 is a schematic diagram of a portion of a sensing electrode and a portion of a signal line in a touch display panel according to an embodiment of the invention. FIG. 5 is a schematic diagram of a portion of a sensing electrode and a portion of a signal line in a touch display panel according to an embodiment of the invention. FIG. 6 is a top plan view of a pixel structure according to an embodiment of the present invention. Figure 7 is a cross-sectional view of the pixel structure of Figure 6 taken along line I-I. Figure 8 is a cross-sectional view of the pixel structure of Figure 6 taken along line II-II. 9 is a cross-sectional view of the pixel structure of FIG. 6 taken along line III-III. FIG. 10 is a top plan view of a pixel structure according to another embodiment of the present invention. Figure 11 is a cross-sectional view of the pixel structure of Figure 10 taken along line IV-IV. Figure 12 is a cross-sectional view of the pixel structure of Figure 10 taken along line V-V. Figure 13 is a cross-sectional view of the pixel structure of Figure 10 taken along line VI-VI.

100‧‧‧Touch display panel

110‧‧‧Sensing electrode array layer

112‧‧‧Sensor electrode

120‧‧‧ bottom metal layer

122‧‧‧Signal line

124‧‧‧Lighting mat

130‧‧‧Active component layer

132‧‧‧Active components

140‧‧‧Connecting conductor

DM‧‧‧ display media layer

SUB1, SUB2‧‧‧ substrate

Claims (20)

A touch display panel includes: a substrate; a sensing electrode array layer disposed on the substrate, comprising a plurality of sensing electrodes, the sensing electrodes being spaced apart from each other and arranged in an array; a bottom metal layer disposed on the substrate The substrate includes a plurality of signal lines, and one of the signal lines transmits a signal between the one of the sensing electrodes and a driving circuit; and an active device layer is disposed on the substrate and located at the sensing electrode array layer Between the bottom metal layer and the bottom metal layer. The touch display panel of claim 1, wherein the active device layer comprises a plurality of active components, and the active components are arranged in an array. The touch display panel of claim 2, wherein the bottom metal layer further comprises a plurality of light shielding pads, and the light shielding pads overlap the active elements in a direction away from the substrate. The touch display panel of claim 2, wherein the one sensing electrode overlaps N active elements in a direction toward the substrate, N is a positive integer greater than 1 and N is smaller than the active components The total number. The touch display panel of claim 2, wherein the active device layer further comprises: a plurality of scan lines, wherein one scan line is connected to one of the active elements to control opening and closing of the one active element; And a plurality of data lines, wherein one of the data lines is connected to the one of the active components, and when one of the active components is turned on, the one of the active components allows the display signal of the one of the data lines to pass, and the extending direction of the one of the signal lines Parallel to the direction in which one of the data lines extends. The touch display panel of claim 1, further comprising a plurality of connecting conductors, wherein one of the connecting conductors is configured to electrically connect one of the signal lines to the one of the sensing electrodes. The touch display panel of claim 1, wherein one end of the one of the signal lines extends beyond the sensing electrode located at the outermost periphery. The touch display panel of claim 1, further comprising a display medium layer disposed on the sensing electrode array layer. A pixel structure includes: a substrate; a signal line on the substrate; a sensing electrode on the signal line, the sensing electrode is electrically connected to the signal line, and the signal line is at the sensing electrode a driving signal is transmitted between the driving circuits; an active component is located between the signal line and the sensing electrode; a scanning line is connected to the active component to control opening and closing of the active component; and a data line is connected The active component has an extending direction parallel to the extending direction of the data line, and the active component allows the display signal on the data line to pass when the active component is turned on. The pixel structure of claim 9, wherein the signal line overlaps the data line in a direction away from the substrate. The pixel structure of claim 10, wherein the signal line has a branch that does not overlap the data line in a direction away from the substrate. The pixel structure of claim 9, further comprising a light shielding pad that overlaps the active component in a direction away from the substrate. The pixel structure of claim 12, wherein the light shielding pad and the signal line are composed of the same film layer. The pixel structure of claim 9, wherein the active device comprises a gate and a semiconductor layer, the semiconductor layer comprising a channel region, a source region and a drain region, the gate being oriented The channel region is overlapped in the direction of the substrate, the channel region is located between the source region and the drain region, the gate is connected to the scan line and the source region is connected to the data line. The pixel structure of claim 14, further comprising: a bottom insulating layer covering the signal line, wherein the semiconductor layer is disposed on the bottom insulating layer; a gate insulating layer disposed on the semiconductor layer and Between the gates; an interlayer insulating layer, the interlayer insulating layer covers the gate, and the data line is disposed on the interlayer insulating layer; a flat layer covering the data line, and the sensing electrode is disposed on the flat a protective layer disposed on the planar layer; and a pixel electrode disposed between the pixel electrode and the sensing electrode. The pixel structure of claim 15, further comprising a connecting conductor, wherein the bottom insulating layer has a first opening, the gate insulating layer has a second opening, and the interlayer insulating layer has a third opening The connecting conductor passes through the first opening, the second opening and the third opening and contacts the signal line. The pixel structure of claim 16, wherein the planar layer has a fourth opening, and the sensing electrode passes through the fourth opening and contacts the connecting conductor. The pixel structure of claim 17, wherein the protective layer has a fifth opening, and the sensing electrode passes through the fourth opening and the fifth opening and contacts the connecting conductor. The pixel structure of claim 15, wherein the pixel electrode is located between the protective layer and the planar layer. The pixel structure of claim 15, wherein the sensing electrode is located between the protective layer and the planar layer.