TW201714934A - Method for manufacturing cured film, method for manufacturing interlayer insulating film for rewiring layer, and method for manufacturing semiconductor device - Google Patents

Method for manufacturing cured film, method for manufacturing interlayer insulating film for rewiring layer, and method for manufacturing semiconductor device Download PDF

Info

Publication number
TW201714934A
TW201714934A TW105127172A TW105127172A TW201714934A TW 201714934 A TW201714934 A TW 201714934A TW 105127172 A TW105127172 A TW 105127172A TW 105127172 A TW105127172 A TW 105127172A TW 201714934 A TW201714934 A TW 201714934A
Authority
TW
Taiwan
Prior art keywords
group
compound
cured film
amine
mass
Prior art date
Application number
TW105127172A
Other languages
Chinese (zh)
Other versions
TWI694101B (en
Inventor
Ichiro Koyama
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW201714934A publication Critical patent/TW201714934A/en
Application granted granted Critical
Publication of TWI694101B publication Critical patent/TWI694101B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12Chemical modification
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

Provided is a method for manufacturing a cured film having an excellent corrosion resistance and chemical resistance. Further provided are a method for manufacturing an interlayer insulating film for a rewiring layer, and a method for manufacturing a semiconductor device that include the method for manufacturing a cured film. Disclosed in the present invention is a method for manufacturing a cured film having an amine content of 50 to 5,000 ppm, said method including the heating, at a temperature not exceeding a maximum heating temperature of 250 DEG C, a layer comprising a composition containing an amine-generating agent, with a polyimide precursor and/or a polybenzoxazole precursor.

Description

硬化膜的製造方法、再配線層用層間絕緣膜的製造方法及半導體元件的製造方法Method for producing cured film, method for producing interlayer insulating film for rewiring layer, and method for producing semiconductor device

本發明是有關於一種硬化膜的製造方法、再配線層用層間絕緣膜的製造方法、及半導體元件的製造方法。尤其是有關於一種使用選自聚醯亞胺前驅物及聚苯并噁唑前驅物中的含有雜環的聚合物前驅物的硬化膜的製造方法。The present invention relates to a method for producing a cured film, a method for producing an interlayer insulating film for a rewiring layer, and a method for producing a semiconductor device. More particularly, it relates to a method for producing a cured film using a heterocyclic-containing polymer precursor selected from the group consisting of a polyimide precursor and a polybenzoxazole precursor.

進行聚醯亞胺或聚苯并噁唑等的環化並進行硬化的熱硬化性樹脂因耐熱性及絕緣性優異,故用於半導體元件的絕緣層等。The thermosetting resin which is cyclized and hardened by polyimine or polybenzoxazole is excellent in heat resistance and insulation, and is used for an insulating layer of a semiconductor element or the like.

另外,聚醯亞胺等因對於溶媒的溶解性低,故以環化反應前的前驅物(含有雜環的聚合物前驅物)的狀態使用,於應用於基板等上後,進行加熱並對含有雜環的聚合物前驅物進行環化而形成硬化膜。Further, since polyimide or the like has low solubility in a solvent, it is used in the state of a precursor (a heterocyclic-containing polymer precursor) before the cyclization reaction, and is applied to a substrate or the like, and then heated and The polymer precursor containing a heterocyclic ring is cyclized to form a cured film.

此處,於專利文獻1中揭示有一種聚醯亞胺前驅物組成物,其含有聚醯亞胺前驅物、因熱而產生鹼的熱鹼產生劑、及溶媒,且聚醯亞胺前驅物為具有下述式(1)的重複單元的聚醯胺酸(polyamide acid)、熱鹼產生劑為藉由以200℃以下的溫度進行加熱來引起熱分解而產生二級胺的中性化合物。 [化1](式中,X表示四價的有機基,Y表示二價的有機基,-COOH基分別與-CONH基相互處於鄰位位置)Here, Patent Document 1 discloses a polyimine precursor composition containing a polyimide precursor, a thermal base generator which generates a base due to heat, and a solvent, and a polyimide precursor. A polyamic acid or a thermal base generator which is a repeating unit of the following formula (1) is a neutral compound which generates a secondary amine by heating at a temperature of 200 ° C or lower to cause thermal decomposition. [Chemical 1] (wherein X represents a tetravalent organic group, Y represents a divalent organic group, and -COOH groups are in an ortho position with the -CONH group, respectively)

另外,於專利文獻2中揭示有一種聚醯胺酸(polyamic acid)組成物,其特徵在於:含有聚醯胺酸、聚苯胺、使聚苯胺導電化的摻雜劑、溶媒、及鹼性添加劑而成。 [現有技術文獻] [專利文獻]Further, Patent Document 2 discloses a polyamic acid composition comprising a polyphthalic acid, a polyaniline, a dopant for conducting conductivity of polyaniline, a solvent, and a basic additive. Made. [Prior Art Document] [Patent Literature]

[專利文獻1]日本專利特開2007-056196號公報 [專利文獻2]日本專利特開2007-056182號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-056196 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2007-056182

[發明所欲解決之課題] 但是,當將使含有雜環的聚合物前驅物進行環化而獲得的硬化膜用於再配線層用層間絕緣膜等時,硬化膜的耐腐蝕性及耐化學品性成為問題。然而,本發明者進行了研究,結果得知,專利文獻1及專利文獻2的實施例中記載的硬化膜的耐腐蝕性及耐化學品性差。 本發明以解決所述課題為目的,提供一種製造耐腐蝕性及耐化學品性優異的硬化膜的方法。另外,有關於一種包括所述硬化膜的製造方法的、再配線層用層間絕緣膜的製造方法及半導體元件的製造方法。 [解決課題之手段][Problems to be Solved by the Invention] However, when a cured film obtained by cyclizing a heterocyclic-containing polymer precursor is used for an interlayer insulating film for a rewiring layer, etc., the cured film is resistant to corrosion and chemicals. Character is a problem. However, the inventors of the present invention have conducted research and found that the cured films described in the examples of Patent Document 1 and Patent Document 2 are inferior in corrosion resistance and chemical resistance. In order to solve the above problems, the present invention provides a method for producing a cured film excellent in corrosion resistance and chemical resistance. Further, the present invention relates to a method for producing an interlayer insulating film for a rewiring layer and a method for producing a semiconductor device, comprising the method for producing a cured film. [Means for solving the problem]

基於所述情況,本發明者進行了研究,結果發現,藉由以硬化膜的胺量成為規定的範圍的方式進行製造,可提供耐腐蝕性及耐化學品性優異的硬化膜,從而完成了本發明。具體而言,藉由下述手段解決了所述課題。 <1>一種硬化膜的製造方法,其包括:對包括包含聚醯亞胺前驅物及聚苯并噁唑前驅物的至少一種與胺產生劑的組成物的層以最高加熱溫度為250℃以下的溫度進行加熱,所述硬化膜中的胺含量為50 ppm~5,000 ppm。 <2>如<1>所述的硬化膜的製造方法,其中所述胺產生劑為光胺產生劑及熱胺產生劑的至少一種。 <3>如<1>或<2>所述的硬化膜的製造方法,其中所述胺產生劑為熱胺產生劑。 <4>如<1>至<3>中任一項所述的硬化膜的製造方法,其中所述組成物不含共軛酸的pKa8以上的胺。 <5>如<1>至<4>中任一項所述的硬化膜的製造方法,其中自20℃~150℃的溫度至所述最高加熱溫度為止以1℃/min~10℃/min的升溫速度進行所述加熱。 <6>如<5>所述的硬化膜的製造方法,其中以所述升溫速度進行所述加熱,到達最高加熱溫度後,進行60分鐘~240分鐘加熱。 <7>如<1>至<6>中任一項所述的硬化膜的製造方法,其中相對於聚醯亞胺前驅物及聚苯并噁唑前驅物的合計量,所述組成物以0.01質量%~45質量%的比例包含所述胺產生劑。 <8>如<1>至<7>中任一項所述的硬化膜的製造方法,其中所述聚醯亞胺前驅物由下述通式(2)表示,所述聚苯并噁唑前驅物由下述通式(3)表示; 通式(2) [化2]通式(2)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示二價的有機基,R115 表示四價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基; 通式(3) [化3]通式(3)中,R121 表示二價的有機基,R122 表示四價的有機基,R123 及R124 分別獨立地表示氫原子或一價的有機基。 <9>如<8>所述的硬化膜的製造方法,其中 於通式(2)中,A1 及A2 的至少一者為氧原子,且R113 及R114 中,所鄰接的A1 及A2 為氧原子的R113 及R114 表示一價的有機基;或者 於通式(3)中,R121 為直鏈狀的脂肪族基。 <10>如<1>至<9>中任一項所述的硬化膜的製造方法,其中所述最高加熱溫度為160℃~250℃。 <11>如<1>至<10>中任一項所述的硬化膜的製造方法,其中所述硬化膜的胺含量為500 ppm~2,000 ppm。 <12>如<1>至<11>中任一項所述的硬化膜的製造方法,其中所述組成物更包含交聯劑。 <13>如<12>所述的硬化膜的製造方法,其中所述交聯劑的分子量為100~800。 <14>如<1>至<13>中任一項所述的硬化膜的製造方法,其中所述胺產生劑選自若加熱至40℃~250℃則產生胺的酸性化合物、及具有pKa1為0~4的陰離子與銨陽離子的銨鹽中的至少一種。 <15>如<14>所述的硬化膜的製造方法,其中所述酸性化合物為若加熱至40℃~250℃則產生胺的化合物。 <16>如<14>或<15>所述的硬化膜的製造方法,其中所述酸性化合物為銨陽離子與羧酸根陰離子的鹽。 <17>一種再配線層用層間絕緣膜的製造方法,其包括:如<1>至<16>中任一項所述的硬化膜的製造方法。 <18>一種半導體元件的製造方法,其包括:如<1>至<16>中任一項所述的硬化膜的製造方法。 <19>一種硬化膜,其是利用如<1>至<16>中任一項所述的硬化膜的製造方法而獲得。 <20>一種半導體元件,其是利用如<1>至<16>中任一項所述的硬化膜的製造方法而獲得。 [發明的效果]Based on the above, the inventors of the present invention have found that it is possible to provide a cured film having excellent corrosion resistance and chemical resistance by being manufactured so that the amount of amine of the cured film is within a predetermined range. this invention. Specifically, the problem is solved by the following means. <1> A method for producing a cured film, comprising: a layer having a composition comprising at least one of a polybenzazole precursor and a polybenzoxazole precursor and an amine generator at a maximum heating temperature of 250 ° C or less The temperature is heated, and the amine content of the cured film is from 50 ppm to 5,000 ppm. The method for producing a cured film according to the above aspect, wherein the amine generator is at least one of a photoamine generator and a hot amine generator. <3> The method for producing a cured film according to <1>, wherein the amine generator is a hot amine generator. The method for producing a cured film according to any one of <1> to <3> wherein the composition does not contain an amine having a pKa8 or higher of a conjugate acid. The method for producing a cured film according to any one of the above aspects, wherein the temperature from 20 ° C to 150 ° C to the maximum heating temperature is from 1 ° C / min to 10 ° C / min. The heating rate is performed at the temperature increase rate. <6> The method for producing a cured film according to <5>, wherein the heating is performed at the temperature increase rate, and after reaching the maximum heating temperature, heating is performed for 60 minutes to 240 minutes. The method for producing a cured film according to any one of <1> to <6> wherein the composition is based on a total amount of the polyimide intermediate and the polybenzoxazole precursor. The ratio of 0.01% by mass to 45% by mass includes the amine generator. The method for producing a cured film according to any one of the above aspects, wherein the polybenzazole precursor is represented by the following general formula (2), the polybenzoxazole The precursor is represented by the following general formula (3); general formula (2) [Chemical 2] In the formula (2), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom. Or a monovalent organic group; general formula (3) [chemical 3] In the formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group. <9> The method for producing a cured film according to <8>, wherein in the formula (2), at least one of A 1 and A 2 is an oxygen atom, and among the R 113 and R 114 , the adjacent A R 113 and R 114 in which 1 and A 2 are an oxygen atom represent a monovalent organic group; or in the formula (3), R 121 is a linear aliphatic group. The method for producing a cured film according to any one of <1> to <9> wherein the maximum heating temperature is from 160 ° C to 250 ° C. The method for producing a cured film according to any one of the above aspects, wherein the cured film has an amine content of from 500 ppm to 2,000 ppm. The method for producing a cured film according to any one of <1> to <11> wherein the composition further comprises a crosslinking agent. <13> The method for producing a cured film according to <12>, wherein the crosslinking agent has a molecular weight of from 100 to 800. The method for producing a cured film according to any one of the above aspects, wherein the amine generating agent is selected from the group consisting of an acidic compound which generates an amine when heated to 40 ° C to 250 ° C, and has a pKa1 of At least one of an anion of 0 to 4 and an ammonium salt of an ammonium cation. <15> The method for producing a cured film according to <14>, wherein the acidic compound is a compound which generates an amine when heated to 40 to 250 °C. <16> The method for producing a cured film according to <14>, wherein the acidic compound is a salt of an ammonium cation and a carboxylate anion. The method for producing a cured film according to any one of <1> to <16>, wherein the method for producing a cured film according to any one of <1> to <16>. The method of producing a cured film according to any one of <1> to <16>. <19> A cured film obtained by the method for producing a cured film according to any one of <1> to <16>. <20> A semiconductor device obtained by the method for producing a cured film according to any one of <1> to <16>. [Effects of the Invention]

藉由本發明,可提供一種製造耐腐蝕性及耐化學品性優異的硬化膜的方法。另外,可提供一種包括所述硬化膜的製造方法的、再配線層用層間絕緣膜的製造方法及半導體元件的製造方法。According to the present invention, it is possible to provide a method for producing a cured film excellent in corrosion resistance and chemical resistance. Further, a method for producing an interlayer insulating film for a rewiring layer and a method for producing a semiconductor element including the method for producing the cured film can be provided.

以下所記載的本發明中的構成要素的說明有時基於本發明的具有代表性的實施形態來進行,但本發明並不限定於此種實施形態。 於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 於本說明書中,「光化射線」是指例如水銀燈的明線光譜、以準分子雷射為代表的遠紫外線、極紫外線(極紫外(Extreme Ultraviolet,EUV)光)、X射線、電子束等。另外,於本發明中,光是指光化射線或放射線。只要事先無特別說明,則本說明書中的「曝光」不僅包含使用水銀燈、以準分子雷射為代表的遠紫外線、X射線、EUV光等進行的曝光,使用電子束、離子束等粒子束進行的描繪亦包含於曝光中。 於本說明書中,使用「~」來表示的數值範圍是指包含「~」的前後所記載的數值作為下限值及上限值的範圍。 於本說明書中,「(甲基)丙烯酸酯」表示「丙烯酸酯」及「甲基丙烯酸酯」的兩者、或任一者,「(甲基)烯丙基」表示「烯丙基」及「甲基烯丙基」的兩者、或任一者,「(甲基)丙烯酸」表示「丙烯酸」及「甲基丙烯酸」的兩者、或任一者,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」的兩者、或任一者。 於本說明書中,「步驟」這一用語不僅是指獨立的步驟,即便於無法與其他步驟明確地加以區分的情形下,只要達成該步驟的預期的作用,則亦包含於本用語中。 於本說明書中,固體成分濃度是指除溶劑以外的其他成分的質量相對於組成物的總質量的質量百分率。另外,只要無特別敍述,則固體成分濃度是指25℃下的濃度。 於本說明書中,Me表示甲基,Ac表示乙醯基,Ph表示苯基。The description of the constituent elements of the present invention described below may be carried out based on representative embodiments of the present invention, but the present invention is not limited to such an embodiment. In the expression of the group (atomic group) in the present specification, the substituted and unsubstituted expressions are not described as including a group having no substituent (atomic group), and also a group having a substituent (atomic group). For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In the present specification, "actinic ray" means, for example, a bright line spectrum of a mercury lamp, a far ultraviolet ray represented by an excimer laser, an extreme ultraviolet ray (Extreme Ultraviolet (EUV) light), an X-ray, an electron beam, or the like. . Further, in the present invention, light means actinic rays or radiation. The "exposure" in this specification includes exposure using a mercury lamp, a far-ultraviolet light represented by a quasi-molecular laser, X-rays, EUV light, etc., using a particle beam such as an electron beam or an ion beam, unless otherwise specified. The depiction is also included in the exposure. In the present specification, the numerical range expressed by "~" means a range including the numerical values described before and after "~" as the lower limit and the upper limit. In the present specification, "(meth) acrylate" means either or both of "acrylate" and "methacrylate", and "(meth)allyl" means "allyl" and "(meth)acrylic acid" means either or both of "acrylic" and "methacrylic acid", "(meth)acrylic acid" "It means either or both of "acryloyl thiol" and "methacryl fluorenyl". In the present specification, the term "step" means not only an independent step, but even if it cannot be clearly distinguished from other steps, it is included in the term as long as the intended effect of the step is achieved. In the present specification, the solid content concentration means the mass percentage of the mass of the components other than the solvent with respect to the total mass of the composition. Further, the solid content concentration means a concentration at 25 ° C unless otherwise specified. In the present specification, Me represents a methyl group, Ac represents an ethyl group, and Ph represents a phenyl group.

本發明的製造方法的特徵在於包括:對包括包含聚醯亞胺前驅物及聚苯并噁唑前驅物(以下,有時稱為「含有雜環的聚合物前驅物」)的至少一種與胺產生劑的組成物的層以最高加熱溫度為250℃以下的溫度進行加熱,製造胺含量為50 ppm~5,000 ppm的硬化膜。藉由如此般調整胺含量,可提供耐腐蝕性及耐化學品性優異的硬化膜。於專利文獻1中記載有於硬化膜中,根據目的而產生的胺亦可殘存於硬化膜中的情況,但未明確記載具體的量。另外,於專利文獻2中有如下記載:殘存於硬化膜中的三級胺較佳為1質量%~5質量%的範圍。然而,關於硬化膜的胺量與耐腐蝕性及耐化學品性的關係,完全未進行研究。應令人驚訝的是硬化膜的胺量有助於硬化膜的耐腐蝕性及耐化學品性。 於本發明的製造方法中,所得的硬化膜的胺含量較佳為100 ppm以上,更佳為400 ppm以上,進而更佳為500 ppm以上。作為上限值,較佳為2,000 ppm以下,更佳為1,000 ppm。藉由設為此種範圍,耐腐蝕性及耐化學品性優異。進而,存在逸氣性亦優異的傾向而較佳。The production method of the present invention is characterized by comprising: at least one of an amine comprising a polybenzazole precursor and a polybenzoxazole precursor (hereinafter sometimes referred to as "heterocyclic-containing polymer precursor") The layer of the composition of the generating agent is heated at a temperature at which the maximum heating temperature is 250 ° C or lower to produce a cured film having an amine content of 50 ppm to 5,000 ppm. By adjusting the amine content in this manner, it is possible to provide a cured film excellent in corrosion resistance and chemical resistance. Patent Document 1 discloses that an amine generated depending on the purpose of the cured film may remain in the cured film, but a specific amount is not clearly described. Further, Patent Document 2 discloses that the tertiary amine remaining in the cured film is preferably in the range of 1% by mass to 5% by mass. However, the relationship between the amount of amine in the cured film and the corrosion resistance and chemical resistance has not been studied at all. It should be surprising that the amine amount of the cured film contributes to the corrosion resistance and chemical resistance of the cured film. In the production method of the present invention, the amine content of the obtained cured film is preferably 100 ppm or more, more preferably 400 ppm or more, and still more preferably 500 ppm or more. The upper limit is preferably 2,000 ppm or less, more preferably 1,000 ppm. By setting it as such a range, it is excellent in corrosion resistance and chemical resistance. Further, it is preferred that the outgassing property is also excellent.

本發明的硬化膜的製造方法包括對包含所述組成物的層以最高加熱溫度為250℃以下進行加熱。 包含所述組成物的層通常是藉由將組成物應用、較佳為塗佈於基板上而形成。作為組成物朝基板上的應用方法,可列舉旋塗(spinning)、浸漬、刮刀塗佈、懸澆(suspended casting)、塗佈、噴霧、靜電噴霧、反輥塗佈等,就可均一地應用於基板上這一理由而言,較佳為旋塗、靜電噴霧及反輥塗佈。例如,亦可如利用由積層所引起的層移動的銅被膜印刷電路基板般,將包含所述組成物的層導入至暫時的具有柔軟性的載體上,繼而塗佈於最終的基板上。The method for producing a cured film of the present invention comprises heating a layer containing the composition at a maximum heating temperature of 250 ° C or lower. The layer comprising the composition is typically formed by applying the composition, preferably to a substrate. As a method of applying the composition to the substrate, spin coating, dipping, doctor blade coating, suspended casting, coating, spraying, electrostatic spraying, back roll coating, etc., can be uniformly applied. For the reason of the substrate, spin coating, electrostatic spraying, and reverse roll coating are preferred. For example, a layer containing the composition may be introduced into a temporary flexible carrier by a copper film printed circuit board by layer movement caused by buildup, and then applied to a final substrate.

作為基板,可列舉:無機基板、樹脂、樹脂複合材料等。 作為無機基板,例如可列舉:玻璃基板,石英基板,矽基板,氮化矽基板,及於如該些般的基板上蒸鍍鉬、鈦、鋁、銅等而成的複合基板。 作為樹脂基板,可列舉包含聚對苯二甲酸丁二酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚萘二甲酸丁二酯、聚苯乙烯、聚碳酸酯、聚碸、聚醚碸、聚芳酯、烯丙基二甘醇碳酸酯、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、聚苯并唑、聚苯硫醚、聚環烯烴、降冰片烯樹脂、聚氯三氟乙烯等氟樹脂、液晶聚合物、丙烯酸樹脂、環氧樹脂、矽酮樹脂、離子聚合物樹脂、氰酸酯樹脂、交聯反丁烯二酸二酯、環狀聚烯烴、芳香族醚、順丁烯二醯亞胺-烯烴、纖維素、環硫化合物等合成樹脂的基板。該些基板直接以所述形態使用的情況少,通常根據最終製品的形態,例如形成如薄膜電晶體(Thin Film Transistor,TFT)器件般的多層積層結構。Examples of the substrate include an inorganic substrate, a resin, and a resin composite material. Examples of the inorganic substrate include a glass substrate, a quartz substrate, a tantalum substrate, a tantalum nitride substrate, and a composite substrate obtained by vapor-depositing molybdenum, titanium, aluminum, copper, or the like on the substrate. Examples of the resin substrate include polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polybutylene naphthalate, polystyrene, polycarbonate, and poly. Bismuth, polyether oxime, polyarylate, allyl diglycol carbonate, polyamine, polyimine, polyamidimide, polyether phthalimide, polybenzoxazole, polyphenylene sulfide , polycycloolefin, norbornene resin, fluororesin such as polychlorotrifluoroethylene, liquid crystal polymer, acrylic resin, epoxy resin, fluorenone resin, ionic polymer resin, cyanate resin, crosslinked antibutene A substrate of a synthetic resin such as an acid diester, a cyclic polyolefin, an aromatic ether, a maleimide-olefin, a cellulose, or an episulfide compound. These substrates are used in a small form as described above, and generally have a multilayered structure such as a thin film transistor (TFT) device depending on the form of the final product.

應用組成物的量(層的厚度)及基板的種類(層的載體)依存於所期望的用途的領域。層的厚度的範圍較佳為0.5 μm~100 μm。 較佳為將組成物應用至基板上後,進行乾燥。乾燥較佳為例如於60℃~150℃下進行10秒~2分鐘。The amount of the applied composition (thickness of the layer) and the type of the substrate (the carrier of the layer) depend on the field of the intended use. The thickness of the layer is preferably in the range of 0.5 μm to 100 μm. It is preferred to apply the composition to the substrate and then dry it. Drying is preferably carried out, for example, at 60 ° C to 150 ° C for 10 seconds to 2 minutes.

加熱是以最高加熱溫度成為250℃以下的方式進行。最高加熱溫度的上限值較佳為240℃以下,更佳為230℃以下,進而更佳為220℃以下,尤佳為210℃以下,更尤佳為200℃以下。最高加熱溫度的下限值較佳為140℃以上,更佳為160℃以上,進而更佳為170℃以上,特佳為180℃以上。此處,所謂最高加熱溫度,是指對藉由為了進行含有雜環的聚合物前驅物的環化反應所實施的加熱而試樣所經歷的溫度中,試樣經歷所述溫度以上累計30秒以上的溫度範圍加以確認,而於所述溫度範圍中最高的溫度。 最高加熱溫度較佳為較胺產生劑產生胺的溫度高0℃~100℃,更佳為高30℃~60℃。The heating is carried out so that the maximum heating temperature becomes 250 ° C or lower. The upper limit of the maximum heating temperature is preferably 240 ° C or lower, more preferably 230 ° C or lower, still more preferably 220 ° C or lower, particularly preferably 210 ° C or lower, and more preferably 200 ° C or lower. The lower limit of the maximum heating temperature is preferably 140 ° C or higher, more preferably 160 ° C or higher, still more preferably 170 ° C or higher, and particularly preferably 180 ° C or higher. Here, the maximum heating temperature means that the sample undergoes a temperature of 30 seconds or more in the temperature experienced by the sample by heating for the cyclization reaction of the polymer precursor containing a hetero ring. The above temperature range is confirmed, and the highest temperature in the temperature range. The maximum heating temperature is preferably from 0 ° C to 100 ° C higher than the temperature at which the amine generating agent produces an amine, more preferably from 30 ° C to 60 ° C.

加熱較佳為自20℃~150℃的溫度至最高加熱溫度為止以1℃/min~10℃/min的升溫速度進行,升溫速度更佳為2℃/min~10℃/min,進而更佳為3℃/min~8℃/min,特佳為3℃/min~6℃/min。藉由將升溫速度設為1℃/min以上,可確保生產性,且防止胺的過量揮發;藉由將升溫速度設為10℃/min以下,可緩和硬化膜的殘存應力,且防止胺的過量殘存。 當以最高加熱溫度為250℃以下的低溫進行加熱,而使含有雜環的聚合物前驅物環化並進行硬化時,難以調整硬化膜中的胺的量,但藉由自150℃以下的溫度以所述升溫速度緩慢地加熱,可抑制由初期的加熱引起的胺的揮發,從而容易地調整硬化膜中的胺量。 加熱開始時的溫度較佳為20℃~150℃,更佳為20℃~130℃,進而更佳為25℃~120℃。加熱開始時的溫度是指開始加熱至最高加熱溫度為止的步驟時的包含組成物的層的溫度。例如,當將組成物塗佈於基板上後加以乾燥時,為該乾燥後的溫度,例如較佳為自組成物中所含的溶劑的沸點-(30~200)℃緩緩地升溫。 加熱較佳為於到達最高加熱溫度後進行60分鐘~240分鐘加熱,更佳為進行100分鐘~230分鐘加熱,特佳為進行150分鐘~220分鐘加熱。藉由設為此種範圍,變得更容易調整硬化膜中的胺的量。The heating is preferably carried out at a temperature increase rate of from 1 ° C / min to 10 ° C / min from a temperature of from 20 ° C to 150 ° C to a maximum heating temperature, and the temperature increase rate is more preferably from 2 ° C / min to 10 ° C / min, and further preferably It is preferably from 3 ° C / min to 8 ° C / min, particularly preferably from 3 ° C / min to 6 ° C / min. By setting the temperature increase rate to 1 ° C/min or more, productivity can be ensured and excessive evaporation of the amine can be prevented. By setting the temperature increase rate to 10 ° C / min or less, the residual stress of the cured film can be alleviated, and the amine can be prevented. Excessive residue. When heating at a low temperature of 250 ° C or lower at the highest heating temperature to cyclize and harden the heterocyclic-containing polymer precursor, it is difficult to adjust the amount of the amine in the cured film, but by a temperature of from 150 ° C or lower. Heating slowly at the temperature increase rate suppresses volatilization of the amine due to initial heating, and the amount of amine in the cured film can be easily adjusted. The temperature at the start of heating is preferably from 20 ° C to 150 ° C, more preferably from 20 ° C to 130 ° C, still more preferably from 25 ° C to 120 ° C. The temperature at the start of heating refers to the temperature of the layer containing the composition at the time of starting the heating to the highest heating temperature. For example, when the composition is applied onto a substrate and dried, the temperature after drying is preferably gradually increased from the boiling point of the solvent contained in the composition (30 to 200) °C. The heating is preferably carried out for 60 minutes to 240 minutes after reaching the maximum heating temperature, more preferably for 100 minutes to 230 minutes, and particularly preferably for 150 minutes to 220 minutes. By setting it as such a range, it becomes easier to adjust the amount of the amine in a hardened film.

加熱可階段性地進行。作為例子,可列舉如下的步驟:以3℃/min自25℃升溫至180℃為止,於180℃下放置60分鐘,然後以2℃/min自180℃升溫至200℃為止,並於200℃下放置120分鐘。於該情況下,較佳為以所有的階段性加熱滿足所述加熱條件的方式設定加熱條件。 進而,亦可在加熱後進行冷卻,作為該情況下的冷卻速度,較佳為1℃/min~5℃/min。Heating can be carried out in stages. As an example, a step of raising the temperature from 25 ° C to 180 ° C at 3 ° C / min, leaving at 180 ° C for 60 minutes, and then raising the temperature from 180 ° C to 200 ° C at 2 ° C / min, and at 200 ° C Place it for 120 minutes. In this case, it is preferred to set the heating conditions so that all of the stepwise heating satisfies the heating conditions. Further, it is also possible to perform cooling after heating, and the cooling rate in this case is preferably 1 ° C / min to 5 ° C / min.

就防止聚醯亞胺等的含有雜環的聚合物前驅物的分解的方面而言,加熱步驟較佳為藉由流入氮氣、氦氣、氬氣等惰性氣體等,而於低氧濃度的環境下進行。氧濃度較佳為50體積ppm以下,更佳為20體積ppm以下。In terms of preventing decomposition of a heterocyclic-containing polymer precursor such as polyfluorene, the heating step is preferably carried out in a low oxygen concentration environment by injecting an inert gas such as nitrogen, helium or argon. Go on. The oxygen concentration is preferably 50 ppm by volume or less, more preferably 20 ppm by volume or less.

本發明的硬化膜的製造方法如上所述,較佳為包括:將所述組成物應用(較佳為塗佈)於基板上的步驟、及使包含應用於基板上的組成物的層(層狀的組成物)硬化的步驟。於本發明中,進而,在將所述組成物應用於基板上的步驟與所述硬化步驟之間,也可進行圖案形成步驟。圖案形成步驟例如可藉由光微影法來進行。例如可列舉經由曝光步驟與進行顯影處理的步驟來進行的方法。 關於利用光微影法的圖案形成,當為負型時,較佳為使用包含含有雜環的聚合物前驅物、作為交聯劑的具有乙烯性不飽和鍵的化合物、及光自由基聚合起始劑的感光性樹脂組成物來進行。另外,當為正型時,較佳為使用包含含有雜環的聚合物前驅物與光酸產生劑的感光性樹脂組成物來進行。另外,當為負型時,含有雜環的聚合物前驅物較佳為具有乙烯性不飽和鍵。該些的詳細情況將於後敍述。 以下,對藉由光微影法來進行圖案形成的情況進行說明。關於將所述組成物應用(較佳為塗佈)於基板上的步驟、及使應用於基板上的層狀的組成物硬化的步驟與所述相同,較佳的範圍亦相同。As described above, the method for producing a cured film of the present invention preferably includes a step of applying (preferably, coating) the composition onto a substrate, and a layer (layer having a composition applied to the substrate). The composition of the composition) hardening step. In the present invention, in addition, a pattern forming step may be performed between the step of applying the composition on the substrate and the hardening step. The pattern forming step can be performed, for example, by photolithography. For example, the method performed by the exposure process and the process of performing a development process is mentioned. Regarding the pattern formation by photolithography, when it is a negative type, it is preferred to use a polymer precursor containing a hetero ring, a compound having an ethylenically unsaturated bond as a crosslinking agent, and photoradical polymerization. The photosensitive resin composition of the starting agent is used. Further, when it is a positive type, it is preferably carried out by using a photosensitive resin composition containing a polymer precursor containing a hetero ring and a photoacid generator. Further, when it is a negative type, the polymer precursor containing a hetero ring preferably has an ethylenically unsaturated bond. Details of these will be described later. Hereinafter, a case where pattern formation is performed by photolithography will be described. The step of applying (preferably, coating) the composition to the substrate and the step of hardening the layered composition applied to the substrate are the same as described above, and the preferred range is also the same.

<曝光步驟> 於曝光步驟中,對應用於基板上的感光性樹脂組成物照射規定的圖案的光化射線或放射線。 光化射線或放射線的波長根據感光性樹脂組成物的組成而不同,但較佳為200 nm~600 nm,更佳為300 nm~450 nm。 作為光源,可使用低壓水銀燈、高壓水銀燈、超高壓水銀燈、化學燈、發光二極體(Light Emitting Diode,LED)光源、準分子雷射產生裝置等,可較佳地使用i射線(365 nm)、h射線(405 nm)、g射線(436 nm)等具有300 nm以上、450 nm以下的波長的光化射線。另外,視需要亦可通過如長波長截止濾波器、短波長截止濾波器、帶通濾波器般的分光濾波器來調整照射光。曝光量較佳為1 mJ/cm2 ~1,000 mJ/cm2 ,更佳為200 mJ/cm2 ~800 mJ/cm2 。 作為曝光裝置,可使用鏡面投影對準曝光器(mirror projection aligner),步進機,掃描器,近接式、接觸式、微透鏡陣列式、透鏡掃瞄器式、雷射曝光式等各種方式的曝光機。 再者,當使用(甲基)丙烯酸酯及類似的烯烴不飽和化合物時,該些的光聚合如公知般,尤其於薄層中因空氣中的氧而得到防止。該效果例如可藉由聚乙烯醇的暫時的被膜層導入、或於惰性氣體中的前曝光或前調整等公知的先前方法來加以緩和。<Exposure Step> In the exposure step, the actinic resin composition used for the substrate is irradiated with an actinic ray or a radiation of a predetermined pattern. The wavelength of the actinic ray or radiation varies depending on the composition of the photosensitive resin composition, but is preferably 200 nm to 600 nm, more preferably 300 nm to 450 nm. As the light source, a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high pressure mercury lamp, a chemical lamp, a light emitting diode (LED) light source, an excimer laser generating device, or the like can be used, and i-ray (365 nm) can be preferably used. An actinic ray having a wavelength of 300 nm or more and 450 nm or less, such as h-ray (405 nm) or g-ray (436 nm). Further, the illumination light may be adjusted by a spectral filter such as a long wavelength cut filter, a short wavelength cut filter, or a band pass filter as needed. The exposure amount is preferably from 1 mJ/cm 2 to 1,000 mJ/cm 2 , more preferably from 200 mJ/cm 2 to 800 mJ/cm 2 . As the exposure device, mirror projection aligner, stepper, scanner, proximity, contact, microlens array, lens scanner, laser exposure, etc. can be used. Exposure machine. Further, when (meth) acrylate and the like olefin unsaturated compound are used, such photopolymerization is known as a film, especially in a thin layer due to oxygen in the air. This effect can be alleviated, for example, by a known prior method such as introduction of a temporary coating layer of polyvinyl alcohol or pre-exposure or pre-adjustment in an inert gas.

<進行顯影處理的步驟> 於進行顯影處理的步驟中,使用顯影液對感光性樹脂組成物的未曝光的部分進行顯影。作為顯影液,可使用水性鹼性顯影液、有機溶劑等。 作為水性鹼性顯影液中所使用的鹼性化合物,例如可列舉:氫氧化鈉、氫氧化鉀、碳酸鈉、碳酸鉀、碳酸氫鈉、碳酸氫鉀、矽酸鈉、矽酸鉀、偏矽酸鈉、偏矽酸鉀、氨或胺等。作為胺,例如可列舉:乙胺、正丙胺、二乙胺、二-正丙胺、三乙胺、甲基二乙胺、烷醇胺、二甲基乙醇胺、三乙醇胺、四級銨氫氧化物、氫氧化四甲基銨(Tetramethyl Ammonium Hydroxide,TMAH)或氫氧化四乙基銨等。其中,較佳為不含金屬的鹼性化合物。適宜的水性鹼性顯影液通常鹼為至0.5 N為止,但亦可於使用前適當地進行稀釋。例如,約0.15 N~0.4 N、較佳為0.20 N~0.35 N的水性鹼性顯影液亦適當。鹼性化合物可僅為一種,亦可為兩種以上。當鹼性化合物為兩種以上時,較佳為其合計為所述範圍。 作為有機溶劑,可使用與可用於後述的組成物的溶劑相同者。例如可適宜地列舉:乙酸-正丁酯、γ-丁內酯、環戊酮、及將該些混合而成者。<Step of Performing Development Process> In the step of performing the development process, the unexposed portion of the photosensitive resin composition is developed using a developer. As the developer, an aqueous alkaline developer, an organic solvent or the like can be used. Examples of the basic compound used in the aqueous alkaline developing solution include sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium hydrogencarbonate, potassium hydrogencarbonate, sodium citrate, potassium citrate, and hemiplegia. Sodium, potassium metasilicate, ammonia or amine. Examples of the amine include ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, methyldiethylamine, alkanolamine, dimethylethanolamine, triethanolamine, and quaternary ammonium hydroxide. , Tetramethyl Ammonium Hydroxide (TMAH) or tetraethylammonium hydroxide. Among them, a basic compound containing no metal is preferred. Suitable aqueous alkaline developing solutions usually have a base of up to 0.5 N, but may also be suitably diluted prior to use. For example, an aqueous alkaline developing solution of about 0.15 N to 0.4 N, preferably 0.20 N to 0.35 N is also suitable. The basic compound may be used alone or in combination of two or more. When the basic compound is two or more kinds, it is preferred that the total is in the above range. As the organic solvent, the same solvent as that which can be used for the composition described later can be used. For example, acetic acid-n-butyl ester, γ-butyrolactone, cyclopentanone, and these may be mentioned.

<聚醯亞胺前驅物及聚苯并噁唑前驅物> 本發明中使用的組成物包含聚醯亞胺前驅物及聚苯并噁唑前驅物(以下,有時稱為「含有雜環的聚合物前驅物」)的至少一種。<Polyimine precursor and polybenzoxazole precursor> The composition used in the present invention contains a polyimide precursor and a polybenzoxazole precursor (hereinafter, sometimes referred to as "heterocyclic-containing" At least one of a polymer precursor").

<<聚醯亞胺前驅物>> 本發明中使用的聚醯亞胺前驅物只要可聚醯亞胺化,則對其結構等並無特別限定,其主旨亦包含聚醯胺醯亞胺前驅物。本發明中使用的聚醯亞胺前驅物較佳為包含由下述通式(2)所表示的重複單元。<<Polyimine precursor>> The polyimine precursor used in the present invention is not particularly limited as long as it can be polyiminated, and the main purpose thereof also includes a polyamidoximine precursor. Things. The polyimine precursor used in the present invention preferably contains a repeating unit represented by the following formula (2).

通式(2) [化4]通式(2)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示二價的有機基,R115 表示四價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基。 通式(2)中的A1 及A2 分別獨立地表示氧原子或NH,較佳為氧原子。尤其,為了更有效地進行低溫下的環化,較佳為A1 及A2 的至少一者為氧原子,且與為氧原子的A1 及A2 鄰接的R113 及/或R114 為一價的有機基。General formula (2) [Chemical 4] In the formula (2), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom. Or a monovalent organic base. A 1 and A 2 in the formula (2) each independently represent an oxygen atom or NH, and are preferably an oxygen atom. In particular, in order to more efficiently carry out cyclization at a low temperature, it is preferred that at least one of A 1 and A 2 is an oxygen atom, and R 113 and/or R 114 adjacent to A 1 and A 2 which are oxygen atoms are A monovalent organic base.

R111 表示二價的有機基。作為二價的有機基,可例示直鏈狀或分支狀的脂肪族基、環狀的脂肪族基及包含芳基的基,較佳為碳數2~20的直鏈狀或分支狀的脂肪族基、碳數6~20的環狀的脂肪族基、碳數6~20的芳基、或包含該些的組合的基,更佳為包含碳數2~60的芳基的基。作為芳基的例子,可列舉下述。R 111 represents a divalent organic group. The divalent organic group may, for example, be a linear or branched aliphatic group, a cyclic aliphatic group or a group containing an aryl group, and preferably a linear or branched fat having 2 to 20 carbon atoms. The group group, a cyclic aliphatic group having 6 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or a group containing a combination of these is more preferably a group containing an aryl group having 2 to 60 carbon atoms. Examples of the aryl group include the following.

[化5]式中,A較佳為單鍵、或選自可經氟原子取代的碳數1~10的烴基、-O-、-C(=O)-、-S-、-S(=O)2 -及-NHCO-、以及該些的組合中的基,更佳為單鍵、選自可經氟原子取代的碳數1~3的伸烷基、-O-、-C(=O)-、-S-、-SO2 -中的基,進而更佳為選自-CH2 -、-O-、-S-、-SO2 -、-C(CF3 )2 -、-C(CH3 )2 -中的二價的基。[Chemical 5] In the formula, A is preferably a single bond or a hydrocarbon group having 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -C(=O)-, -S-, -S(=O) 2 - and -NHCO-, and a group in the combination of these, more preferably a single bond, selected from alkyl groups having 1 to 3 carbon atoms which may be substituted by a fluorine atom, -O-, -C(=O)- a group in -S-, -SO 2 -, and more preferably selected from -CH 2 -, -O-, -S-, -SO 2 -, -C(CF 3 ) 2 -, -C(CH 3 ) The divalent group in 2 -.

更具體而言,R111 可列舉二胺的胺基去除後所殘存的二胺殘基。作為二胺,可列舉直鏈狀或分支狀的脂肪族、環狀的脂肪族或芳香族二胺等。 具體而言,可列舉以下的二胺的胺基去除後所殘存的二胺殘基等。 選自1,2-二胺基乙烷、1,2-二胺基丙烷、1,3-二胺基丙烷、1,4-二胺基丁烷及1,6-二胺基己烷;1,2-二胺基環戊烷或1,3-二胺基環戊烷、1,2-二胺基環己烷、1,3-二胺基環己烷或1,4-二胺基環己烷、1,2-雙(胺基甲基)環己烷、1,3-雙(胺基甲基)環己烷或1,4-雙(胺基甲基)環己烷、雙(4-胺基環己基)甲烷、雙(3-胺基環己基)甲烷、4,4'-二胺基-3,3'-二甲基環己基甲烷及異佛爾酮二胺;間苯二胺及對苯二胺、二胺基甲苯、4,4'-二胺基聯苯及3,3'-二胺基聯苯、4,4'-二胺基二苯基醚及3,3'-二胺基二苯基醚、4,4'-二胺基二苯基甲烷及3,3'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸及3,3'-二胺基二苯基碸、4,4'-二胺基二苯硫醚及3,3'-二胺基二苯硫醚、4,4'-二胺基二苯甲酮及3,3'-二胺基二苯甲酮、3,3'-二甲基-4,4'-二胺基聯苯、2,2'-二甲基-4,4'-二胺基聯苯、3,3'-二甲氧基-4,4'-二胺基聯苯、2,2-雙(4-胺基苯基)丙烷、2,2-雙(4-胺基苯基)六氟丙烷、2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、4,4'-二胺基對聯三苯、4,4'-雙(4-胺基苯氧基)聯苯、雙[4-(4-胺基苯氧基)苯基]碸、雙[4-(3-胺基苯氧基)苯基]碸、雙[4-(2-胺基苯氧基)苯基]碸、1,4-雙(4-胺基苯氧基)苯、9,10-雙(4-胺基苯基)蒽、3,3'-二甲基-4,4'-二胺基二苯基碸、1,3-雙(4-胺基苯氧基)苯、1,3-雙(3-胺基苯氧基)苯、1,3-雙(4-胺基苯基)苯、3,3'-二乙基-4,4'-二胺基二苯基甲烷、3,3'-二甲基-4,4'-二胺基二苯基甲烷、4,4'-二胺基八氟聯苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷、9,9-雙(4-胺基苯基)-10-氫蒽、3,3',4,4'-四胺基聯苯、3,3',4,4'-四胺基二苯基醚、1,4-二胺基蒽醌、1,5-二胺基蒽醌、3,3-二羥基-4,4'-二胺基聯苯、9,9'-雙(4-胺基苯基)茀、4,4'-二甲基-3,3'-二胺基二苯基碸、3,3',5,5'-四甲基-4,4'-二胺基二苯基甲烷、2,4-二胺基枯烯及2,5-二胺基枯烯、2,5-二甲基-對苯二胺、乙醯胍胺、2,3,5,6-四甲基-對苯二胺、2,4,6-三甲基-間苯二胺、雙(3-胺基丙基)四甲基二矽氧烷、2,7-二胺基茀、2,5-二胺基吡啶、1,2-雙(4-胺基苯基)乙烷、二胺基苯甲醯苯胺、二胺基苯甲酸的酯、1,5-二胺基萘、二胺基三氟甲苯、1,3-雙(4-胺基苯基)六氟丙烷、1,4-雙(4-胺基苯基)八氟丁烷、1,5-雙(4-胺基苯基)十氟戊烷、1,7-雙(4-胺基苯基)十四氟庚烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(2-胺基苯氧基)苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-二甲基苯基]六氟丙烷、2,2-雙[4-(4-胺基苯氧基)-3,5-雙(三氟甲基)苯基]六氟丙烷、對雙(4-胺基-2-三氟甲基苯氧基)苯、4,4'-雙(4-胺基-2-三氟甲基苯氧基)聯苯、4,4'-雙(4-胺基-3-三氟甲基苯氧基)聯苯、4,4'-雙(4-胺基-2-三氟甲基苯氧基)二苯基碸、4,4'-雙(3-胺基-5-三氟甲基苯氧基)二苯基碸、2,2-雙[4-(4-胺基-3-三氟甲基苯氧基)苯基]六氟丙烷、3,3',5,5'-四甲基-4,4'-二胺基聯苯、3,3'-二甲氧基-4,4'-二胺基聯苯、4,4'-二胺基-2,2'-雙(三氟甲基)聯苯、2,2',5,5',6,6'-六氟聯甲苯胺及4,4'''-二胺基四聯苯中的至少一種二胺。More specifically, R 111 may be a diamine residue remaining after the removal of the amine group of the diamine. Examples of the diamine include a linear or branched aliphatic, cyclic aliphatic or aromatic diamine. Specifically, the diamine residue or the like remaining after the removal of the amine group of the following diamine is exemplified. Selected from 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane, and 1,6-diaminohexane; 1,2-diaminocyclopentane or 1,3-diaminocyclopentane, 1,2-diaminocyclohexane, 1,3-diaminocyclohexane or 1,4-diamine Cyclohexane, 1,2-bis(aminomethyl)cyclohexane, 1,3-bis(aminomethyl)cyclohexane or 1,4-bis(aminomethyl)cyclohexane, Bis(4-aminocyclohexyl)methane, bis(3-aminocyclohexyl)methane, 4,4'-diamino-3,3'-dimethylcyclohexylmethane and isophoronediamine; M-phenylenediamine and p-phenylenediamine, diaminotoluene, 4,4'-diaminobiphenyl and 3,3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether and 3,3'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane and 3,3'-diaminodiphenylmethane, 4,4'-diaminodiphenyl And 3,3'-diaminodiphenylanthracene, 4,4'-diaminodiphenyl sulfide and 3,3'-diaminodiphenyl sulfide, 4,4'-diaminodi Benzophenone and 3,3'-diaminobenzophenone, 3,3'-dimethyl-4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4' -diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2-bis(4-aminophenyl) Propane, 2,2-bis(4-aminophenyl)hexafluoropropane, 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2-bis(3-hydroxy-4- Aminophenyl)hexafluoropropane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, double (3-Amino-4-hydroxyphenyl)indole, bis(4-amino-3-hydroxyphenyl)anthracene, 4,4'-diaminolated terphenyl, 4,4'-bis(4- Aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)phenyl]anthracene, bis[4-(3-aminophenoxy)phenyl]anthracene, bis[4-( 2-aminophenoxy)phenyl]anthracene, 1,4-bis(4-aminophenoxy)benzene, 9,10-bis(4-aminophenyl)anthracene, 3,3'-di Methyl-4,4'-diaminodiphenylphosphonium, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 1, 3-bis(4-aminophenyl)benzene, 3,3'-diethyl-4,4'-diaminodiphenylmethane, 3,3'-dimethyl-4,4'-di Aminodiphenylmethane, 4,4'-diamino octafluorobiphenyl, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4- (4-Aminophenoxy)phenyl]hexafluoropropane, 9,9-bis(4-aminophenyl)-10-hydroquinone, 3,3',4,4'-tetraaminobiphenyl , 3,3',4,4'-tetraaminodiphenyl ether, 1,4-diamine Indole, 1,5-diaminopurine, 3,3-dihydroxy-4,4'-diaminobiphenyl, 9,9'-bis(4-aminophenyl)anthracene, 4,4'-Dimethyl-3,3'-diaminodiphenylanthracene,3,3',5,5'-tetramethyl-4,4'-diaminodiphenylmethane, 2,4-di Amino cumene and 2,5-diamino cumene, 2,5-dimethyl-p-phenylenediamine, acetamidine, 2,3,5,6-tetramethyl-p-phenylenediamine, 2,4,6-trimethyl-m-phenylenediamine, bis(3-aminopropyl)tetramethyldioxane, 2,7-diaminopurine, 2,5-diaminopyridine, 1,2-bis(4-aminophenyl)ethane, diamino benzilanilide, ester of diaminobenzoic acid, 1,5-diaminonaphthalene, diaminotrifluorotoluene, 1, 3-bis(4-aminophenyl)hexafluoropropane, 1,4-bis(4-aminophenyl)octafluorobutane, 1,5-bis(4-aminophenyl)decafluoropentane 1,7-bis(4-aminophenyl)tetradecfluoroheptane, 2,2-bis[4-(3-aminophenoxy)phenyl]hexafluoropropane, 2,2-dual [ 4-(2-Aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-dimethylphenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)-3,5-bis(trifluoromethyl)phenyl]hexafluoropropane, p-bis(4-amino-2-trifluoromethyl) Phenoxy)benzene, 4 , 4'-bis(4-amino-2-trifluoromethylphenoxy)biphenyl, 4,4'-bis(4-amino-3-trifluoromethylphenoxy)biphenyl, 4 , 4'-bis(4-amino-2-trifluoromethylphenoxy)diphenylphosphonium, 4,4'-bis(3-amino-5-trifluoromethylphenoxy)diphenyl Base, 2,2-bis[4-(4-amino-3-trifluoromethylphenoxy)phenyl]hexafluoropropane, 3,3',5,5'-tetramethyl-4, 4'-Diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl And at least one diamine of biphenyl, 2,2',5,5',6,6'-hexafluorotoluidine and 4,4"'-diaminotetraben.

另外,亦可列舉下述所示的二胺(DA-1)~二胺(DA-18)的胺基去除後所殘存的二胺殘基作為R111 的例子。Further, examples of the diamine residue remaining after the removal of the amine group of the diamine (DA-1) to the diamine (DA-18) shown below are exemplified as R 111 .

[化6] [Chemical 6]

[化7] [Chemistry 7]

另外,亦可列舉於主鏈具有兩個以上的烷二醇單元的二胺的胺基去除後所殘存的二胺殘基作為R111 的例子。較佳為於一分子中一倂包含兩個以上的乙二醇鏈、丙二醇鏈的任一者或兩者的二胺殘基,更佳為不含芳香環的二胺殘基。作為例子,可列舉:傑夫鹼(Jeffamine)(註冊商標)KH-511、ED-600、ED-900、ED-2003、EDR-148、EDR-176、D-200、D-400、D-2000、D-4000(以上為商品名,亨斯邁(HUNTSMAN)(股份)製造),1-(2-(2-(2-胺基丙氧基)乙氧基)丙氧基)丙烷-2-胺、1-(1-(1-(2-胺基丙氧基)丙烷-2-基)氧基)丙烷-2-胺等,但並不限定於此。以下示出傑夫鹼(Jeffamine)(註冊商標)KH-511、ED-600、ED-900、ED-2003、EDR-148、EDR-176的結構。Further, examples of the diamine residue remaining after the removal of the amine group of the diamine having two or more alkanediol units in the main chain are exemplified as R 111 . It is preferably a diamine residue containing one or both of two or more ethylene glycol chains and propylene glycol chains in one molecule, more preferably a diamine residue containing no aromatic ring. As an example, Jeffamine (registered trademark) KH-511, ED-600, ED-900, ED-2003, EDR-148, EDR-176, D-200, D-400, D- can be cited. 2000, D-4000 (above is the trade name, manufactured by HUNTSMAN (share)), 1-(2-(2-(2-aminopropoxy)ethoxy)propoxy)propane- 2-amine, 1-(1-(1-(2-aminopropoxy)propan-2-yl)oxy)propan-2-amine, etc., but is not limited thereto. The structures of Jeffamine (registered trademark) KH-511, ED-600, ED-900, ED-2003, EDR-148, and EDR-176 are shown below.

[化8] [化8]

於所述中,x、y、z為平均值。In the above, x, y, and z are average values.

R115 表示四價的有機基。作為四價的有機基,較佳為包含芳香環的四價的有機基,更佳為由下述通式(5)或通式(6)所表示的基。 通式(5) [化9]通式(5)中,R112 表示單鍵、或二價的基。二價的基較佳為選自可經氟原子取代的碳數1~10的烴基、-O-、-CO-、-S-、-SO2 -及-NHCO-以及該些的組合中的基。R112 更佳為單鍵、或選自可經氟原子取代的碳數1~3的伸烷基、-O-、-CO-、-S-及-SO2 -中的二價的基,進而更佳為單鍵、或選自由-CH2 -、-C(CF3 )2 -、-C(CH3 )2 -、-O-、-CO-、-S-及-SO2 -所組成的群組中的二價的基。R 115 represents a tetravalent organic group. The tetravalent organic group is preferably a tetravalent organic group containing an aromatic ring, and more preferably a group represented by the following formula (5) or formula (6). General formula (5) [Chemical 9] In the formula (5), R 112 represents a single bond or a divalent group. The divalent group is preferably selected from the group consisting of a hydrocarbon group having 1 to 10 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S-, -SO 2 -, and -NHCO-, and combinations thereof. base. R 112 is more preferably a single bond or a divalent group selected from the group consisting of an alkylene group having 1 to 3 carbon atoms which may be substituted by a fluorine atom, -O-, -CO-, -S- and -SO 2 -. More preferably, it is a single bond or is selected from -CH 2 -, -C(CF 3 ) 2 -, -C(CH 3 ) 2 -, -O-, -CO-, -S-, and -SO 2 - The divalent base in the composed group.

通式(6) [化10] General formula (6) [10]

具體而言,R115 可列舉自四羧酸二酐中去除酐基後所殘存的四羧酸殘基等。 具體而言,可列舉自以下的四羧酸二酐中去除酐基後所殘存的四羧酸殘基等。 選自均苯四甲酸二酐(Pyromellitic dianhydride,PMDA)、3,3',4,4'-聯苯四羧酸二酐、3,3',4,4'-二苯基硫醚四羧酸二酐、3,3',4,4'-二苯基碸四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-二苯基甲烷四羧酸二酐、2,2',3,3'-二苯基甲烷四羧酸二酐、2,3,3',4'-聯苯四羧酸二酐、2,3,3',4'-二苯甲酮四羧酸二酐、4,4'-氧基二鄰苯二甲酸二酐、2,3,6,7-萘四羧酸二酐、1,4,5,7-萘四羧酸二酐、2,2-雙(3,4-二羧基苯基)丙烷二酐、2,2-雙(2,3-二羧基苯基)丙烷二酐、2,2-雙(3,4-二羧基苯基)六氟丙烷二酐、1,3-二苯基六氟丙烷-3,3,4,4-四羧酸二酐、1,4,5,6-萘四羧酸二酐、2,2',3,3'-二苯基四羧酸二酐、3,4,9,10-苝四羧酸二酐、1,2,4,5-萘四羧酸二酐、1,4,5,8-萘四羧酸二酐、1,8,9,10-菲四羧酸二酐、1,1-雙(2,3-二羧基苯基)乙烷二酐、1,1-雙(3,4-二羧基苯基)乙烷二酐、1,2,3,4-苯四羧酸二酐、以及該些碳數1~6的烷基及/或碳數1~6的烷氧基衍生物中的至少一種四羧酸二酐。Specifically, examples of R 115 include a tetracarboxylic acid residue remaining after removing an anhydride group from a tetracarboxylic dianhydride. Specifically, a tetracarboxylic acid residue or the like remaining after removing an anhydride group from the following tetracarboxylic dianhydride can be mentioned. Selected from pyromellitic dianhydride (PMDA), 3,3',4,4'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyl sulfide tetracarboxylic acid Acid dianhydride, 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3',4 , 4'-diphenylmethanetetracarboxylic dianhydride, 2,2',3,3'-diphenylmethanetetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic acid Anhydride, 2,3,3',4'-benzophenonetetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid Anhydride, 1,4,5,7-naphthalenetetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl) Propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, 1,3-diphenylhexafluoropropane-3,3,4,4-tetracarboxylic dianhydride 1,4,5,6-naphthalenetetracarboxylic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,8,9,10-phenanthrenetetracarboxylic dianhydride, 1,1-double (2,3-dicarboxyphenyl)ethane dianhydride, 1,1-bis(3,4-dicarboxyphenyl)ethane dianhydride, 1,2,3,4-benzenetetracarboxylic dianhydride, And the alkyl groups having 1 to 6 carbon atoms / Or at least one tetracarboxylic acid dianhydride derivative carbons, alkoxy of 1 to 6.

另外,亦可列舉自下述所示的四羧酸二酐(DAA-1)~四羧酸二酐(DAA-5)中去除酐基後所殘存的四羧酸殘基作為R115 的例子。 [化11] Further, examples of the tetracarboxylic acid residue remaining after removing the anhydride group from the tetracarboxylic dianhydride (DAA-1) to the tetracarboxylic dianhydride (DAA-5) shown below may be exemplified as R 115 . . [11]

就對於鹼性顯影液的溶解度的觀點而言,較佳為R111 與R115 的至少一者中具有OH基。更具體而言,作為R111 ,可列舉2,2-雙(3-羥基-4-胺基苯基)丙烷、2,2-雙(3-羥基-4-胺基苯基)六氟丙烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、雙(3-胺基-4-羥基苯基)碸、雙(4-胺基-3-羥基苯基)碸、所述(DA-1)~(DA-18)作為較佳例,作為R115 ,可列舉所述(DAA-1)~(DAA-5)作為較佳例。From the viewpoint of the solubility of the alkaline developer, it is preferred that at least one of R 111 and R 115 has an OH group. More specifically, as R 111 , 2,2-bis(3-hydroxy-4-aminophenyl)propane and 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane are mentioned. , 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4- Hydroxyphenyl) hydrazine, bis(4-amino-3-hydroxyphenyl)fluorene, and (DA-1) to (DA-18) are preferred examples, and as R 115 , the above (DAA-) 1) to (DAA-5) are preferred examples.

R113 及R114 分別獨立地表示氫原子或一價的有機基。 作為R113 及R114 所表示的一價的有機基,可較佳地使用提升對於顯影液的溶解度的取代基。R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group. As the monovalent organic group represented by R 113 and R 114 , a substituent which enhances the solubility to the developing solution can be preferably used.

就對於水性顯影液的溶解度的觀點而言,R113 及R114 較佳為氫原子或一價的有機基。作為一價的有機基,可列舉具有鍵結於芳基的碳原子上的一個、兩個或三個,較佳為一個的酸性基的芳基及芳烷基等。具體而言,可列舉具有酸性基的碳數6~20的芳基、具有酸性基的碳數7~25的芳烷基。更具體而言,可列舉具有酸性基的苯基及具有酸性基的苄基。酸性基較佳為OH基。 就對於水性顯影液的溶解性的方面而言,較佳為R113 、R114 為氫原子、2-羥基苄基、3-羥基苄基及4-羥基苄基。From the viewpoint of the solubility of the aqueous developing solution, R 113 and R 114 are preferably a hydrogen atom or a monovalent organic group. The monovalent organic group may, for example, be an aryl group or an aralkyl group having one, two or three, preferably one, acidic groups bonded to a carbon atom of the aryl group. Specific examples thereof include an aryl group having 6 to 20 carbon atoms having an acidic group and an aralkyl group having 7 to 25 carbon atoms having an acidic group. More specifically, a phenyl group having an acidic group and a benzyl group having an acidic group are exemplified. The acidic group is preferably an OH group. In terms of solubility in an aqueous developing solution, R 113 and R 114 are preferably a hydrogen atom, a 2-hydroxybenzyl group, a 3-hydroxybenzyl group or a 4-hydroxybenzyl group.

就對於有機溶劑的溶解度的觀點而言,R113 及R114 較佳為一價的有機基。作為一價的有機基,較佳為包含直鏈狀或分支狀的烷基、環狀烷基、芳基,更佳為經芳基取代的烷基。 烷基的碳數較佳為1~30。烷基可為直鏈狀、分支狀、環狀的任一種。作為直鏈狀或分支狀的烷基,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二基、十四基、十八基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、及2-乙基己基。環狀的烷基可為單環的環狀的烷基,亦可為多環的環狀的烷基。作為單環的環狀的烷基,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基、及環辛基。作為多環的環狀的烷基,例如可列舉:金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基、及蒎烯基。其中,就與高感度化的並存的觀點而言,最佳為環己基。另外,作為經芳基取代的烷基,較佳為經後述的芳基取代的直鏈烷基。 作為芳基,具體而言可列舉:經取代或未經取代的苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、乙烷合萘(acenaphthene)環、菲環、蒽環、稠四苯環、環、三伸苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹噁唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并吡喃環、呫噸環、啡噁噻環、啡噻嗪環、及啡嗪環。最佳為苯環。From the viewpoint of the solubility of the organic solvent, R 113 and R 114 are preferably a monovalent organic group. The monovalent organic group is preferably an alkyl group having a linear or branched shape, a cyclic alkyl group, or an aryl group, more preferably an alkyl group substituted with an aryl group. The alkyl group preferably has 1 to 30 carbon atoms. The alkyl group may be any of a linear chain, a branched chain, and a cyclic chain. Examples of the linear or branched alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a dodecyl group, and a tetradecyl group. Base, octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl, and 2-ethylhexyl. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of the monocyclic cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group. Examples of the polycyclic cyclic alkyl group include adamantyl group, norbornyl group, borneol group, nonenyl group, decahydronaphthyl group, tricyclodecyl group, tetracyclodecyl group, and indenyl group. , dicyclohexyl, and decenyl. Among them, from the viewpoint of coexistence with high sensitivity, the cyclohexyl group is most preferable. Further, the alkyl group substituted with an aryl group is preferably a linear alkyl group substituted with an aryl group described later. Specific examples of the aryl group include a substituted or unsubstituted benzene ring, a naphthalene ring, a pentylene ring, an anthracene ring, an anthracene ring, a heptene ring, a terpene ring, an anthracene ring, and a fused pentabenzene ring. , ethane naphthalene (acenaphthene) ring, phenanthrene ring, anthracene ring, thick tetraphenyl ring, Ring, triphenylene, anthracene, biphenyl, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, pyridazine Ring, anthracene ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolizine ring, quinoline ring, pyridazine ring, naphthyridine ring, quinoxaline ring, quinoxaline ring, different Quinoline ring, carbazole ring, phenazin ring, acridine ring, phenanthroline ring, thioxan ring, benzopyran ring, xanthene ring, morphine ring, phenothiazine ring, and phenazine ring. The best is the benzene ring.

於通式(2)中,較佳為R113 及R114 的至少一者具有聚合性不飽和基。藉此,可獲得感度及解析性更良好的負型感光性樹脂。藉由如此般具有聚合性不飽和基(尤其是自由基聚合性基),於對利用本發明的製造方法所得的硬化膜進行負型顯影時更有效。然而,於進行負型顯影時,當調配交聯劑(尤其是自由基聚合性化合物)時,聚合性不飽和基並非必需。 作為聚合性不飽和基,可列舉:環氧基、氧雜環丁基、具有乙烯性不飽和鍵的基、嵌段異氰酸酯基、烷氧基甲基、羥甲基、胺基等。其中,就感度良好這一理由而言,較佳為具有乙烯性不飽和鍵的基。作為具有乙烯性不飽和鍵的基,可列舉:乙烯基、(甲基)烯丙基、由下述式(III)所表示的基等。In the formula (2), at least one of R 113 and R 114 preferably has a polymerizable unsaturated group. Thereby, a negative photosensitive resin having better sensitivity and resolution can be obtained. By having a polymerizable unsaturated group (especially a radical polymerizable group) as described above, it is more effective in performing negative development on the cured film obtained by the production method of the present invention. However, in the case of performing negative development, when a crosslinking agent (particularly a radically polymerizable compound) is formulated, a polymerizable unsaturated group is not essential. Examples of the polymerizable unsaturated group include an epoxy group, an oxetanyl group, a group having an ethylenically unsaturated bond, a blocked isocyanate group, an alkoxymethyl group, a methylol group, and an amine group. Among them, in the case where the sensitivity is good, a group having an ethylenically unsaturated bond is preferred. Examples of the group having an ethylenically unsaturated bond include a vinyl group, a (meth)allyl group, and a group represented by the following formula (III).

[化12] [化12]

於式(III)中,R200 表示氫原子或甲基,更佳為甲基。 於式(III)中,R201 表示碳數2~12的伸烷基、-CH2 CH(OH)CH2 -或碳數4~30的聚氧伸烷基。 適宜的R201 的例子可列舉:伸乙基、伸丙基、三亞甲基、四亞甲基、1,2-丁二基、1,3-丁二基、五亞甲基、六亞甲基、八亞甲基、十二亞甲基、-CH2 CH(OH)CH2 -,較佳為伸乙基、伸丙基、三亞甲基、-CH2 CH(OH)CH2 -。 特佳為R200 為甲基,且R201 為伸乙基。In the formula (III), R 200 represents a hydrogen atom or a methyl group, more preferably a methyl group. In the formula (III), R 201 represents an alkylene group having 2 to 12 carbon atoms, -CH 2 CH(OH)CH 2 - or a polyoxyalkylene group having 4 to 30 carbon atoms. Examples of suitable R 201 include an exoethyl group, a propyl group, a trimethylene group, a tetramethylene group, a 1,2-butanediyl group, a 1,3-butanediyl group, a pentamethylene group, and a hexamethylene group. Base, octamethylene, dodecamethylene, -CH 2 CH(OH)CH 2 -, preferably ethyl, propyl, trimethylene, -CH 2 CH(OH)CH 2 -. More preferably, R 200 is a methyl group and R 201 is an exoethyl group.

當通式(2)的重複單元包含聚合性基時,關於R113 及R114 為聚合性不飽和基的比例,聚合性基:不含聚合性基的莫耳比較佳為100:0~5:95,更佳為100:0~20:80,進而更佳為100:0~50:50。When the repeating unit of the formula (2) contains a polymerizable group, the ratio of R 113 and R 114 to a polymerizable unsaturated group, and the polymerizable group: a molar group containing no polymerizable group is preferably 100:0 to 5 : 95, more preferably 100:0 to 20:80, and even more preferably 100:0 to 50:50.

當於通式(2)中,R113 為氫原子時,及/或R114 為氫原子時,聚醯亞胺前驅物亦可與具有乙烯性不飽和鍵的三級胺化合物形成抗衡鹽(counter salt)。作為此種具有乙烯性不飽和鍵的三級胺化合物的例子,可列舉N,N-二甲基胺基丙基甲基丙烯酸酯。When R 113 is a hydrogen atom in the formula (2), and/or R 114 is a hydrogen atom, the polyimine precursor may also form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond ( Counter salt). An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

另外,於進行鹼顯影的情況下,就提升解析性的方面而言,聚醯亞胺前驅物較佳為於結構單元中具有氟原子。藉由氟原子,可於鹼顯影時對膜的表面賦予撥水性,從而抑制自表面的滲透等。聚醯亞胺前驅物中的氟原子含量較佳為10質量%以上,另外,就對於鹼性水溶液的溶解性的方面而言,較佳為20質量%以下。Further, in the case of performing alkali development, the polyimine precursor preferably has a fluorine atom in the structural unit in terms of improving the resolution. By the fluorine atom, water repellency can be imparted to the surface of the film at the time of alkali development, thereby suppressing penetration from the surface and the like. The content of the fluorine atom in the polyimide precursor is preferably 10% by mass or more, and is preferably 20% by mass or less in terms of solubility in the alkaline aqueous solution.

另外,以提升與基板的密接性為目的,亦可將具有矽氧烷結構的脂肪族基共聚。具體而言,作為二胺成分,可列舉雙(3-胺基丙基)四甲基二矽氧烷、雙(對胺基苯基)八甲基五矽氧烷等。Further, for the purpose of improving the adhesion to the substrate, an aliphatic group having a siloxane structure may be copolymerized. Specific examples of the diamine component include bis(3-aminopropyl)tetramethyldioxane and bis(p-aminophenyl)octamethylpentaoxane.

另外,為了提升組成物的保存穩定性,聚醯亞胺前驅物較佳為利用單胺、酸酐、單羧酸、單醯氯化合物、單活性酯化合物等封端劑將主鏈末端封閉。該些中,更佳為使用單胺。作為單胺,可列舉:苯胺、2-乙炔基苯胺、3-乙炔基苯胺、4-乙炔基苯胺、5-胺基-8-羥基喹啉、1-羥基-7-胺基萘、1-羥基-6-胺基萘、1-羥基-5-胺基萘、1-羥基-4-胺基萘、2-羥基-7-胺基萘、2-羥基-6-胺基萘、2-羥基-5-胺基萘、1-羧基-7-胺基萘、1-羧基-6-胺基萘、1-羧基-5-胺基萘、2-羧基-7-胺基萘、2-羧基-6-胺基萘、2-羧基-5-胺基萘、2-胺基苯甲酸、3-胺基苯甲酸、4-胺基苯甲酸、4-胺基水楊酸、5-胺基水楊酸、6-胺基水楊酸、2-胺基苯磺酸、3-胺基苯磺酸、4-胺基苯磺酸、3-胺基-4,6-二羥基嘧啶、2-胺基苯酚、3-胺基苯酚、4-胺基苯酚、2-胺基噻吩、3-胺基噻吩、4-胺基噻吩等。可使用該些的兩種以上,亦可藉由使多種封端劑反應而導入多種不同的末端基。Further, in order to enhance the storage stability of the composition, the polyimine precursor is preferably blocked with a terminal blocking agent such as a monoamine, an acid anhydride, a monocarboxylic acid, a monofluorinated chlorine compound or a mono-active ester compound. Among these, it is more preferred to use a monoamine. Examples of the monoamine include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, and 1- Hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2- Hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2- Carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-amine Salicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophene, 3-aminothiophene, 4-aminothiophene, and the like. Two or more of these may be used, and a plurality of different terminal groups may be introduced by reacting a plurality of blocking agents.

由通式(2)所表示的重複單元較佳為由通式(1-1)所表示的重複單元。即,本發明中使用的含有雜環的聚合物前驅物的至少一種較佳為具有由通式(1-1)所表示的重複單元的前驅物。藉由設為此種結構,可使曝光寬容度的寬度更廣。 [化13]通式(1-1)中,A1 及A2 表示氧原子,R111 及R112 分別獨立地表示二價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基。The repeating unit represented by the formula (2) is preferably a repeating unit represented by the formula (1-1). That is, at least one of the heterocyclic-containing polymer precursors used in the present invention is preferably a precursor having a repeating unit represented by the formula (1-1). By adopting such a structure, the width of the exposure latitude can be made wider. [Chemistry 13] In the formula (1-1), A 1 and A 2 each represent an oxygen atom, and R 111 and R 112 each independently represent a divalent organic group, and R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group. .

A1 、A2 、R111 、R113 及R114 分別獨立地與通式(2)中的A1 、A2 、R111 、R113 及R114 為相同含義,較佳的範圍亦相同。 R112 與通式(5)中的R112 為相同含義,較佳的範圍亦相同。A 1 , A 2 , R 111 , R 113 and R 114 each independently have the same meanings as A 1 , A 2 , R 111 , R 113 and R 114 in the formula (2), and the preferred ranges are also the same. R 112 in the general formula (5) is the same meaning as R 112, preferred ranges are also the same.

聚醯亞胺前驅物中,由通式(2)所表示的重複結構單元可為一種亦可為兩種以上。另外,亦可包含由通式(2)所表示的重複單元的結構異構體。另外,除所述通式(2)的重複單元以外,聚醯亞胺前驅物當然還包含其他種類的重複結構單元。In the polyimine precursor, the repeating structural unit represented by the formula (2) may be one type or two or more types. Further, a structural isomer of a repeating unit represented by the formula (2) may also be contained. Further, in addition to the repeating unit of the above formula (2), the polyimine precursor may of course contain other kinds of repeating structural units.

作為本發明中的聚醯亞胺前驅物的一實施形態,可例示所有重複單元的50莫耳%以上、進而70莫耳%以上、尤其90莫耳%以上為由通式(2)所表示的重複單元的聚醯亞胺前驅物。As an embodiment of the polyimine precursor in the present invention, 50 mol% or more, further 70 mol% or more, and particularly 90 mol% or more of all repeating units can be represented by the general formula (2). The repeating unit of the polyimine precursor.

聚醯亞胺前驅物的重量平均分子量(Mw)較佳為10,000~50,000,更佳為14,000~30,000。另外,數量平均分子量(Mn)較佳為5,000~14,000。 所述聚醯亞胺前驅物的分散度較佳為2.0以上,更佳為2.1以上。聚醯亞胺前驅物的分散度的上限值並無特別限定,例如較佳為4.5以下,更佳為4.0以下,進而更佳為3.8以下,尤佳為3.2以下,更尤佳為3.1以下,進而尤佳為3.0以下,特尤佳為2.95以下,最佳為2.6以下。The weight average molecular weight (Mw) of the polyimide precursor is preferably from 10,000 to 50,000, more preferably from 14,000 to 30,000. Further, the number average molecular weight (Mn) is preferably from 5,000 to 14,000. The degree of dispersion of the polyimide precursor is preferably 2.0 or more, more preferably 2.1 or more. The upper limit of the degree of dispersion of the polyimide precursor is not particularly limited, and is, for example, preferably 4.5 or less, more preferably 4.0 or less, still more preferably 3.8 or less, still more preferably 3.2 or less, still more preferably 3.1 or less. Further, it is preferably 3.0 or less, and particularly preferably 2.95 or less, and most preferably 2.6 or less.

<<聚苯并噁唑前驅物>> 本發明中使用的聚苯并噁唑前驅物只要是可進行聚苯并噁唑化的化合物,則其結構等並無特別限定,較佳為由下述通式(3)所表示的化合物。<<Polybenzoxazole precursor>> The polybenzoxazole precursor used in the present invention is not particularly limited as long as it is a compound capable of polybenzoxazole, and the structure and the like are not particularly limited, and it is preferably The compound represented by the formula (3).

通式(3) [化14]通式(3)中,R121 表示二價的有機基,R122 表示四價的有機基,R123 及R124 分別獨立地表示氫原子或一價的有機基。General formula (3) [Chemistry 14] In the formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group.

R121 表示二價的有機基。作為二價的有機基,可列舉脂肪族基或芳基。 作為二價的芳基的例子,可列舉下述。R 121 represents a divalent organic group. The divalent organic group may, for example, be an aliphatic group or an aryl group. Examples of the divalent aryl group include the following.

[化15]式中,A表示選自由-CH2 -、-O-、-S-、-SO2 -、-CO-、-NHCO-、-C(CF3 )2 -、及-C(CH3 )2 -所組成的群組中的二價的基。[化15] Wherein A represents a group selected from the group consisting of -CH 2 -, -O-, -S-, -SO 2 -, -CO-, -NHCO-, -C(CF 3 ) 2 -, and -C(CH 3 ) 2 - a divalent group in the group formed.

作為二價的脂肪族基,就促進低溫下的環化的方面而言,較佳為直鏈狀的脂肪族基。直鏈狀的脂肪族基的碳數較佳為2~30,更佳為2~25,進而更佳為3~20,尤佳為4~15,特佳為5~10。直鏈狀的脂肪族基較佳為伸烷基。作為包含直鏈狀的脂肪族基的二羧酸類,例如可列舉:丙二酸、二甲基丙二酸、乙基丙二酸、異丙基丙二酸、二正丁基丙二酸、丁二酸、四氟丁二酸、甲基丁二酸、2,2-二甲基丁二酸、2,3-二甲基丁二酸、二甲基甲基丁二酸、戊二酸、六氟戊二酸、2-甲基戊二酸、3-甲基戊二酸、2,2-二甲基戊二酸、3,3-二甲基戊二酸、3-乙基-3-甲基戊二酸、己二酸、八氟己二酸、3-甲基己二酸、庚二酸、2,2,6,6-四甲基庚二酸、辛二酸、十二氟辛二酸、壬二酸、癸二酸、十六氟癸二酸、1,9-壬二酸、十二烷二酸、十三烷二酸、十四烷二酸、十五烷二酸、十六烷二酸、十七烷二酸、十八烷二酸、十九烷二酸、二十烷二酸、二十一烷二酸、二十二烷二酸、二十三烷二酸、二十四烷二酸、二十五烷二酸、二十六烷二酸、二十七烷二酸、二十八烷二酸、二十九烷二酸、三十烷二酸、三十一烷二酸、三十二烷二酸、二甘醇酸、以及由下述通式所表示的二羧酸等。The divalent aliphatic group is preferably a linear aliphatic group in terms of promoting cyclization at a low temperature. The carbon number of the linear aliphatic group is preferably from 2 to 30, more preferably from 2 to 25, still more preferably from 3 to 20, still more preferably from 4 to 15, particularly preferably from 5 to 10. The linear aliphatic group is preferably an alkyl group. Examples of the dicarboxylic acid containing a linear aliphatic group include malonic acid, dimethylmalonic acid, ethylmalonic acid, isopropylmalonic acid, and di-n-butylmalonic acid. Succinic acid, tetrafluoro succinic acid, methyl succinic acid, 2,2-dimethyl succinic acid, 2,3-dimethyl succinic acid, dimethyl methyl succinic acid, glutaric acid , hexafluoroglutaric acid, 2-methylglutaric acid, 3-methylglutaric acid, 2,2-dimethylglutaric acid, 3,3-dimethylglutaric acid, 3-ethyl- 3-methylglutaric acid, adipic acid, octafluoroadipate, 3-methyladipate, pimelic acid, 2,2,6,6-tetramethylpimelic acid, suberic acid, ten Difluorosuberic acid, azelaic acid, sebacic acid, hexadecafluorosebacic acid, 1,9-sebacic acid, dodecanedioic acid, tridecanedioic acid, tetradecanedioic acid, pentadecane Diacid, hexadecandioic acid, heptadecanedioic acid, octadecanedioic acid, nonadecanedioic acid, eicosanedioic acid, eicosanedioic acid, behenic acid, twenty-three Alkanoic acid, tetracosanedioic acid, dipentadecanedioic acid, hexadecanedioic acid, heptacosanedioic acid, octacosanedioic acid, octadecanedioic acid, triacontane Acid, three A dodecanedioic acid, tris dodecanedioic acid, diglycolic acid, and the dicarboxylic acid represented by the following formula.

[化16](式中Z為碳數1~6的烴基,n為1~6的整數)[Chemistry 16] (wherein Z is a hydrocarbon group having 1 to 6 carbon atoms, and n is an integer of 1 to 6)

R122 表示四價的有機基。作為四價的有機基,與所述通式(2)中的R115 為相同含義,較佳的範圍亦相同。 另外,R122 較佳為由下述通式(A)所表示的雙胺基苯酚衍生物的殘基。   Ar(NH2 )2 (OH)2 ···(A)   式中,Ar為芳基。R 122 represents a tetravalent organic group. The tetravalent organic group has the same meaning as R 115 in the above formula (2), and the preferred range is also the same. Further, R 122 is preferably a residue of a bisaminophenol derivative represented by the following formula (A). Ar(NH 2 ) 2 (OH) 2 (A) wherein Ar is an aryl group.

作為所述通式(A)的雙胺基苯酚衍生物,例如可列舉:3,3'-二胺基-4,4'-二羥基聯苯、4,4'-二胺基-3,3'-二羥基聯苯、3,3'-二胺基-4,4'-二羥基二苯基碸、4,4'-二胺基-3,3'-二羥基二苯基碸、雙(3-胺基-4-羥基苯基)甲烷、2,2-雙(3-胺基-4-羥基苯基)丙烷、2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、2,2-雙(4-胺基-3-羥基苯基)六氟丙烷、雙(4-胺基-3-羥基苯基)甲烷、2,2-雙(4-胺基-3-羥基苯基)丙烷、4,4'-二胺基-3,3'-二羥基二苯甲酮、3,3'-二胺基-4,4'-二羥基二苯甲酮、4,4'-二胺基-3,3'-二羥基二苯基醚、3,3'-二胺基-4,4'-二羥基二苯基醚、1,4-二胺基-2,5-二羥基苯、1,3-二胺基-2,4-二羥基苯、1,3-二胺基-4,6-二羥基苯等。該些雙胺基苯酚可單獨使用,亦可將兩種以上混合使用。Examples of the bisaminophenol derivative of the above formula (A) include 3,3'-diamino-4,4'-dihydroxybiphenyl and 4,4'-diamino-3. 3'-dihydroxybiphenyl, 3,3'-diamino-4,4'-dihydroxydiphenylanthracene, 4,4'-diamino-3,3'-dihydroxydiphenylanthracene, Bis(3-amino-4-hydroxyphenyl)methane, 2,2-bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl) Hexafluoropropane, 2,2-bis(4-amino-3-hydroxyphenyl)hexafluoropropane, bis(4-amino-3-hydroxyphenyl)methane, 2,2-bis(4-amine) 3-hydroxyphenyl)propane, 4,4'-diamino-3,3'-dihydroxybenzophenone, 3,3'-diamino-4,4'-dihydroxydiphenyl Ketone, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 3,3'-diamino-4,4'-dihydroxydiphenyl ether, 1,4-diamine Base-2,5-dihydroxybenzene, 1,3-diamino-2,4-dihydroxybenzene, 1,3-diamino-4,6-dihydroxybenzene, and the like. These bisaminophenols may be used singly or in combination of two or more.

由通式(A)所表示的雙胺基苯酚衍生物中,較佳為具有下述芳基的雙胺基苯酚衍生物。Among the bisaminophenol derivatives represented by the formula (A), a bisaminophenol derivative having the following aryl group is preferred.

[化17]式中,X1 表示-O-、-S-、-C(CF3 )2 -、-CH2 -、-SO2 -、-NHCO-。另外,於所述結構中,通式(A)的結構中所含的-OH與-NH2 相互鍵結於鄰位(鄰接位)上。 就獲得對於i射線而為高透明、且於低溫下可硬化的苯并噁唑前驅物的方面而言,所述通式(A)的雙胺基苯酚衍生物較佳為由下述通式(A-s)所表示的雙苯酚。[化17] In the formula, X 1 represents -O-, -S-, -C(CF 3 ) 2 -, -CH 2 -, -SO 2 -, -NHCO-. Further, in the above structure, -OH and -NH 2 contained in the structure of the general formula (A) are bonded to each other in the ortho position (adjacent position). In view of obtaining a benzoxazole precursor which is highly transparent to i-rays and hardens at a low temperature, the bisaminophenol derivative of the formula (A) preferably has the following formula Bisphenol represented by (As).

[化18](A-s)[化18] (As)

式中,R1 為伸烷基、經取代的伸烷基、-O-、-S-、-SO2 -、-CO-、-NHCO-、單鍵、或選自下述式(A-sc)的群組中的有機基。R2 為氫原子、烷基、烷氧基、醯氧基、環狀的烷基的任一者,可相同亦可不同。R3 為氫原子、直鏈狀或分支狀的烷基、烷氧基、醯氧基、環狀的烷基的任一者,可相同亦可不同。Wherein R 1 is an alkylene group, a substituted alkylene group, -O-, -S-, -SO 2 -, -CO-, -NHCO-, a single bond, or is selected from the group consisting of the following formula (A- The organic group in the group of sc). R 2 is any one of a hydrogen atom, an alkyl group, an alkoxy group, a decyloxy group, and a cyclic alkyl group, and may be the same or different. R 3 is any of a hydrogen atom, a linear or branched alkyl group, an alkoxy group, a decyloxy group, or a cyclic alkyl group, and may be the same or different.

[化19](A-sc)   (式中,*表示鍵結於由所述式(A-s)所表示的雙胺基苯酚衍生物的胺基苯酚基的芳香環上)[Chemistry 19] (A-sc) (wherein * represents an aromatic ring bonded to the aminophenol group of the bisaminophenol derivative represented by the formula (As))

所述式(A-s)中,認為於酚性羥基的鄰位、即R3 上亦具有取代基會使醯胺鍵的羰基碳與羥基的距離更接近,就於低溫下硬化時成為高環化率的效果進一步提高的方面而言特佳。In the above formula (As), it is considered that the ortho position of the phenolic hydroxyl group, that is, the substituent on R 3 , causes the distance between the carbonyl carbon of the guanamine bond and the hydroxyl group to be closer, and becomes high cyclization upon hardening at a low temperature. The effect of the rate is further improved in terms of further improvement.

另外,所述式(A-s)中,就獲得維持對於i射線的高透明性與於低溫下硬化時為高環化率的效果、同時當將鹼性水溶液用於顯影液時具有充分的溶解性而平衡性優異的聚苯并噁唑前驅物的方面而言,特佳為R2 為烷基且R3 為烷基。Further, in the formula (As), the effect of maintaining high transparency to i-rays and high cyclization rate upon hardening at low temperatures is obtained, and at the same time, sufficient solubility is obtained when an alkaline aqueous solution is used for a developing solution. In the aspect of the polybenzoxazole precursor excellent in balance, it is particularly preferred that R 2 is an alkyl group and R 3 is an alkyl group.

另外,所述式(A-s)中,較佳為R1 為伸烷基或經取代的伸烷基。作為R1 中的伸烷基及經取代的伸烷基的具體的例子,可列舉:-CH2 -、-CH(CH3 )-、-C(CH3 )2 -、-CH(CH2 CH3 )-、-C(CH3 )(CH2 CH3 )-、-C(CH2 CH3 )(CH2 CH3 )-、-CH(CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH3 )-、-CH(CH(CH3 )2 )-、-C(CH3 )(CH(CH3 )2 )-、-CH(CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH3 )-、-CH(CH2 CH(CH3 )2 )-、-C(CH3 )(CH2 CH(CH3 )2 )-、-CH(CH2 CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH2 CH3 )-、-CH(CH2 CH2 CH2 CH2 CH2 CH3 )-、-C(CH3 )(CH2 CH2 CH2 CH2 CH2 CH3 )-等,其中就可獲得維持對於i射線的高透明性與於低溫下硬化時為高環化率的效果、同時不僅對於鹼性水溶液而且對於溶劑亦具有充分的溶解性而平衡性優異的聚苯并噁唑前驅物的方面而言,更佳為-CH2 -、-CH(CH3 )-、-C(CH3 )2 -。Further, in the formula (As), R 1 is preferably an alkylene group or a substituted alkylene group. Specific examples of the alkylene group and the substituted alkylene group in R 1 include -CH 2 -, -CH(CH 3 )-, -C(CH 3 ) 2 -, -CH(CH 2 ) CH 3 )-, -C(CH 3 )(CH 2 CH 3 )-, -C(CH 2 CH 3 )(CH 2 CH 3 )-, -CH(CH 2 CH 2 CH 3 )-, -C( CH 3 )(CH 2 CH 2 CH 3 )-, -CH(CH(CH 3 ) 2 )-, -C(CH 3 )(CH(CH 3 ) 2 )-, -CH(CH 2 CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 2 CH 3 )-, -CH(CH 2 CH(CH 3 ) 2 )-, -C(CH 3 )(CH 2 CH(CH 3 ) 2 )-, -CH(CH 2 CH 2 CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 2 CH 2 CH 3 )-, -CH(CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 )-, -C(CH 3 )(CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 )-, etc., wherein high transparency for i-rays and hardening at low temperatures can be obtained It is more preferably -CH 2 -, -CH in terms of a polybenzoxazole precursor which is effective not only for an alkaline aqueous solution but also for a solvent and has a sufficient solubility for a solvent. (CH 3 )-, -C(CH 3 ) 2 -.

作為由所述式(A-s)所表示的雙胺基苯酚衍生物的製造方法,例如可參考日本專利特開2013-256506號公報的段落號0085~段落號0094及實施例1(段落號0189~段落號0190),將該些內容併入本說明書中。As a method for producing the bisaminophenol derivative represented by the above formula (As), for example, paragraphs 0085 to 0094 and 1 (paragraph 0189 of JP-A-2013-256506) can be referred to. Paragraph No. 0190), the contents of which are incorporated in this specification.

作為由所述式(A-s)所表示的雙胺基苯酚衍生物的結構的具體例,可列舉日本專利特開2013-256506號公報的段落號0070~段落號0080中記載者,將該些內容併入本說明書中。當然,並不限定於該些具體例。Specific examples of the structure of the bisaminophenol derivative represented by the above formula (As) include those described in paragraph number 0070 to paragraph 0080 of JP-A-2013-256506. Into this specification. Of course, it is not limited to these specific examples.

其中,作為由所述式(A-s)所表示的雙胺基苯酚衍生物,較佳為下述所示者。Among them, the bisaminophenol derivative represented by the above formula (A-s) is preferably as described below.

[化20] [Chemistry 20]

R123 及R124 表示氫原子或一價的有機基,較佳為氫原子或聚合性不飽和基。就可獲得感度及解析性更良好的負型感光性樹脂的方面而言,較佳為R123 及R124 的至少一者表示聚合性不飽和基。作為聚合性不飽和基,與通式(2)中的R113 及R114 中所說明的形態相同,較佳的範圍亦相同。R 123 and R 124 represent a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or a polymerizable unsaturated group. In terms of obtaining a negative photosensitive resin having better sensitivity and resolution, at least one of R 123 and R 124 preferably represents a polymerizable unsaturated group. The polymerizable unsaturated group is the same as the one described in R 113 and R 114 in the formula (2), and the preferred range is also the same.

聚苯并噁唑前驅物除所述通式(3)的重複單元以外,亦可包含其他種類的重複結構單元。 就可抑制伴隨閉環的翹曲的產生的方面而言,較佳為包含由下述通式(SL)所表示的二胺殘基作為其他種類的重複結構單元。The polybenzoxazole precursor may contain other kinds of repeating structural units in addition to the repeating unit of the above formula (3). In terms of suppressing the occurrence of warpage accompanying the ring closure, it is preferred to include a diamine residue represented by the following formula (SL) as another type of repeating structural unit.

[化21]通式(SL)中,Z具有a結構與b結構,R1s 為氫原子或碳數1~10的烴基,R2s 為碳數1~10的烴基,R3s 、R4s 、R5s 、R6s 中的至少一者為芳基,剩餘為氫原子或碳數1~30的有機基,分別可相同,亦可不同。a結構及b結構的聚合可為嵌段聚合亦可為無規聚合。Z部分的莫耳%中,a結構為5莫耳%~95莫耳%,b結構為95莫耳%~5莫耳%,且a+b為100莫耳%。[Chem. 21] In the general formula (SL), Z has an a structure and a b structure, R 1s is a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, R 2s is a hydrocarbon group having 1 to 10 carbon atoms, and R 3s , R 4s , R 5s and R At least one of 6s is an aryl group, and the remainder is a hydrogen atom or an organic group having 1 to 30 carbon atoms, which may be the same or different. The polymerization of the a structure and the b structure may be block polymerization or random polymerization. In the molar % of the Z portion, the a structure is 5 mol% to 95 mol%, the b structure is 95 mol% to 5 mol%, and a+b is 100 mol%.

於通式(SL)中,作為較佳的Z,可列舉b結構中的R5s 及R6s 為苯基者。另外,由通式(SL)所表示的結構的分子量較佳為400~4,000,更佳為500~3,000。分子量可藉由通常所使用的凝膠滲透層析法來求出。藉由將所述分子量設為所述範圍,可使可降低聚苯并噁唑前驅物的脫水閉環後的彈性模數而抑制翹曲的效果與提升溶解性的效果並存。In the general formula (SL), preferred examples of Z include those in which R 5s and R 6s in the b structure are phenyl groups. Further, the molecular weight of the structure represented by the general formula (SL) is preferably from 400 to 4,000, more preferably from 500 to 3,000. The molecular weight can be determined by gel permeation chromatography which is usually used. By setting the molecular weight to the above range, the effect of suppressing warpage and the effect of improving solubility can be reduced by reducing the elastic modulus after dehydration ring closure of the polybenzoxazole precursor.

當包含由通式(SL)所表示的二胺殘基作為其他種類的重複結構單元時,就提升鹼可溶性的方面而言,較佳為更包含自四羧酸二酐中去除酐基後所殘存的四羧酸殘基作為重複結構單元。作為此種四羧酸殘基的例子,可列舉通式(2)中的R115 的例子。When the diamine residue represented by the general formula (SL) is contained as another kind of repeating structural unit, in terms of enhancing alkali solubility, it is preferred to further include the removal of the anhydride group from the tetracarboxylic dianhydride. The remaining tetracarboxylic acid residue serves as a repeating structural unit. Examples of such a tetracarboxylic acid residue include an example of R 115 in the formula (2).

另外,為了進一步提升組成物的保存穩定性,較佳為使用酸酐使聚苯并噁唑前驅物的末端的胺基成為醯胺而進行封閉,所述酸酐包含具有至少一個烯基或炔基的脂肪族基或環狀的基。Further, in order to further enhance the storage stability of the composition, it is preferred to use an acid anhydride to block the amine group at the terminal of the polybenzoxazole precursor, which comprises at least one alkenyl group or alkynyl group. An aliphatic group or a cyclic group.

作為此種起因於酸酐的基、即封端基,例如可列舉下述所示的基,所述酸酐包含具有至少一個與胺基反應後的烯基或炔基的脂肪族基或環狀的基。該些可單獨使用,亦可將兩種以上組合使用。Examples of such a group derived from an acid anhydride, that is, a terminal group, may be, for example, a group having an aliphatic group or a cyclic group having at least one alkenyl group or alkynyl group reacted with an amine group. base. These may be used alone or in combination of two or more.

[化22] [化22]

[化23] [化23]

尤其,就提升保存性的方面而言,較佳為下述所示的基。In particular, in terms of improving the preservability, the base shown below is preferred.

[化24] [Chem. 24]

例如,可使由通式(A)所表示的雙胺基苯酚衍生物、與選自包含R121 的二羧酸以及所述二羧酸的二羧酸二氯化物及二羧酸衍生物等中的化合物反應而獲得聚苯并噁唑前驅物。 再者,當使用二羧酸時,為了提高反應產率等,亦可使用預先使1-羥基-1,2,3-苯并三唑等反應所得的活性酯型的二羧酸衍生物。For example, a bisaminophenol derivative represented by the formula (A), a dicarboxylic acid selected from the group consisting of R 121 , a dicarboxylic acid dichloride of the dicarboxylic acid, a dicarboxylic acid derivative, etc. The compound in the reaction is reacted to obtain a polybenzoxazole precursor. Further, when a dicarboxylic acid is used, an active ester type dicarboxylic acid derivative obtained by previously reacting 1-hydroxy-1,2,3-benzotriazole or the like may be used in order to increase the reaction yield and the like.

例如當用於後述的組成物中時,聚苯并噁唑前驅物的重量平均分子量(Mw)較佳為8,000~30,000,更佳為9,000~29,000,進而更佳為10,000~28,000。另外,數量平均分子量(Mn)較佳為5,000~14,000,更佳為6,000~12,000,進而更佳為6,500~11,200。 所述聚苯并噁唑前驅物的分散度較佳為1.4以上,更佳為1.5以上,進而更佳為1.6以上。聚苯并噁唑前驅物的分散度的上限值並無特別限定,例如較佳為2.6以下,更佳為2.5以下,進而更佳為2.4以下,尤佳為2.3以下,更尤佳為2.2以下。For example, when used in the composition described later, the weight average molecular weight (Mw) of the polybenzoxazole precursor is preferably from 8,000 to 30,000, more preferably from 9,000 to 29,000, still more preferably from 10,000 to 28,000. Further, the number average molecular weight (Mn) is preferably from 5,000 to 14,000, more preferably from 6,000 to 12,000, still more preferably from 6,500 to 11,200. The degree of dispersion of the polybenzoxazole precursor is preferably 1.4 or more, more preferably 1.5 or more, still more preferably 1.6 or more. The upper limit of the degree of dispersion of the polybenzoxazole precursor is not particularly limited, and is, for example, preferably 2.6 or less, more preferably 2.5 or less, still more preferably 2.4 or less, still more preferably 2.3 or less, still more preferably 2.2. the following.

本發明中使用的組成物中的含有雜環的聚合物前驅物的含量較佳為組成物的20質量%~50質量%,更佳為25質量%~40質量%。另外,本發明中使用的組成物中的含有雜環的聚合物前驅物的含量較佳為組成物的固體成分的70質量%以上,更佳為75質量%以上。上限值並無特別限定,含有雜環的聚合物前驅物與胺產生劑的合計量亦可為組成物的固體成分的100質量%。 另外,本發明中使用的組成物亦可僅包含一種含有雜環的聚合物前驅物,亦可包含兩種以上。當包含兩種以上時,較佳為合計量成為所述範圍。另外,亦可包含聚醯亞胺前驅物與聚苯并噁唑前驅物的兩者,但更佳為僅包含一種以上的聚醯亞胺前驅物的形態、及僅包含兩種以上的聚苯并噁唑前驅物的形態。The content of the heterocyclic-containing polymer precursor in the composition used in the present invention is preferably from 20% by mass to 50% by mass, and more preferably from 25% by mass to 40% by mass. Further, the content of the heterocyclic-containing polymer precursor in the composition used in the present invention is preferably 70% by mass or more, and more preferably 75% by mass or more based on the solid content of the composition. The upper limit is not particularly limited, and the total amount of the heterocyclic-containing polymer precursor and the amine generator may be 100% by mass of the solid content of the composition. Further, the composition used in the present invention may contain only one type of polymer precursor containing a hetero ring, or may contain two or more types. When two or more types are contained, it is preferable that the total amount is the said range. Further, both the polyimine precursor and the polybenzoxazole precursor may be contained, but more preferably one or more polyimine precursors are contained, and only two or more polyphenyls are contained. And the morphology of the oxazole precursor.

<胺產生劑> 本發明中使用的組成物包含胺產生劑。作為本發明中的胺產生劑,可廣泛採用雖於常溫常壓(例如,25℃、101,325 Pa)下不顯示產生胺的反應,但藉由某種刺激進行分解或結構變換而產生胺者。此處,就刺激而言,可例示藉由一定溫度以上的加熱(較佳為所述加熱)進行分解或結構變換而產生胺者(熱胺產生劑)以及藉由光的照射(曝光)進行分解或結構變換而產生胺者(光胺產生劑)。作為除此以外的刺激,可例示基於與選自酸×鹼×自由基中的活性種的反應、或與氧化劑、還原劑的反應等的刺激。 於本發明中,胺產生劑較佳為熱胺產生劑及光胺產生劑,更佳為熱胺產生劑。<Amine Producer> The composition used in the present invention contains an amine generator. As the amine generating agent in the present invention, a reaction which does not exhibit an amine generation at normal temperature and normal pressure (for example, 25 ° C, 101, 325 Pa) can be widely used, but an amine is produced by decomposition or structural transformation by a certain stimulus. Here, as for the stimuli, it is exemplified that the amine (hot amine generator) is produced by decomposition or structural transformation by heating (preferably the heating) at a certain temperature or higher, and irradiation (exposure) by light Decomposition or structural transformation to produce an amine (photoamine generator). As the stimulus other than this, a stimulus based on a reaction with an active species selected from an acid × base × radical, or a reaction with an oxidizing agent or a reducing agent can be exemplified. In the present invention, the amine generating agent is preferably a hot amine generating agent and a photoamine generating agent, more preferably a hot amine generating agent.

作為該些胺產生劑,通常可列舉:藉由烷氧基羰基等保護基進行鈍化而成的胺類、硝苯吡啶(nifedipine)類、由胺與酸所形成的鹽、四級銨鹽等。 藉由調配此種化合物,可於低溫下進行含有雜環的聚合物的環化反應,且可形成穩定性更優異的組成物。另外,本發明中使用的胺產生劑只要不賦予刺激便不會產生胺,故即便與含有雜環的聚合物前驅物共存,亦可抑制保存過程中的含有雜環的聚合物前驅物的環化,保存穩定性優異。Examples of the amine generators include amines which are passivated by a protecting group such as an alkoxycarbonyl group, nifedipines, salts formed of an amine and an acid, and quaternary ammonium salts. . By blending such a compound, the cyclization reaction of the heterocyclic-containing polymer can be carried out at a low temperature, and a composition having more excellent stability can be formed. Further, the amine generator used in the present invention does not produce an amine unless it is stimulated, so that even if it is coexisted with a heterocyclic-containing polymer precursor, the ring of the heterocyclic-containing polymer precursor during storage can be suppressed. It has excellent storage stability.

<<熱胺產生劑>> 作為熱胺產生劑,其種類等並無特別限定,較佳為包含選自若加熱至40℃~250℃則產生胺的酸性化合物(A1)、及具有pKa1為0~4的陰離子與銨陽離子的銨鹽(A2)中的至少一種。藉由採用此種化合物,可進一步提高逸氣性。此處,所謂pKa1,表示多元酸的第一質子的解離常數(Ka)的對數標記(-Log10 Ka)。 藉由調配此種化合物,可於低溫下進行含有雜環的聚合物前驅物的環化反應,且可形成穩定性更優異的組成物。另外,熱胺產生劑只要不加熱便不會產生鹼,故即便與含有雜環的聚合物前驅物共存,亦可抑制保存過程中的含有雜環的聚合物前驅物的環化,保存穩定性優異。<<Thermal amine generator>> The type of the heat amine generator is not particularly limited, and is preferably an acidic compound (A1) selected from the group consisting of heating to 40 ° C to 250 ° C to produce an amine, and having a pKa1 of 0. At least one of an anion of ~4 and an ammonium salt (A2) of an ammonium cation. By using such a compound, the outgassing property can be further improved. Here, pKa1 represents a logarithmic mark (-Log 10 Ka) of the dissociation constant (Ka) of the first proton of the polybasic acid. By compounding such a compound, the cyclization reaction of the heterocyclic-containing polymer precursor can be carried out at a low temperature, and a composition having more excellent stability can be formed. Further, since the hot amine generating agent does not generate an alkali without heating, even if it coexists with the polymer precursor containing a hetero ring, cyclization of the heterocyclic-containing polymer precursor during storage can be suppressed, and storage stability can be prevented. Excellent.

熱胺產生劑若進行加熱則產生鹼,因此藉由自該些化合物所產生的鹼,可促進含有雜環的聚合物前驅物的環化反應,並可於低溫下進行含有雜環的聚合物前驅物的環化。另外,即便使該些化合物與藉由胺而進行環化並進行硬化的含有雜環的聚合物前驅物共存,只要不進行加熱,則含有雜環的聚合物前驅物的環化亦幾乎不會進行,因此可製備穩定性優異的組成物。 再者,於本說明書中,所謂酸性化合物,是指如下的化合物:將化合物1 g提取至容器中,添加離子交換水與四氫呋喃的混合液(質量比為水/四氫呋喃=1/4)50 mL,並於室溫下攪拌1小時,使用pH(potential hydrogen)計,於20℃下對該溶液進行測定所得的值未滿7。When the hot amine generating agent is heated to generate a base, the cyclization reaction of the heterocyclic-containing polymer precursor can be promoted by the base generated from the compounds, and the heterocyclic-containing polymer can be carried out at a low temperature. Cyclization of the precursor. Further, even if these compounds are coexisted with a heterocyclic-containing polymer precursor which is cyclized and cured by an amine, the cyclization of the polymer precursor containing a hetero ring is hardly obtained unless heating is performed. This is carried out, so that a composition excellent in stability can be prepared. In the present specification, the term "acid compound" means a compound obtained by extracting 1 g of the compound into a container and adding a mixture of ion-exchanged water and tetrahydrofuran (mass ratio of water/tetrahydrofuran = 1/4) 50 mL. The mixture was stirred at room temperature for 1 hour, and the value obtained by measuring the solution at 20 ° C was less than 7 using a pH (potential hydrogen) meter.

本發明中的熱胺產生劑的胺產生溫度較佳為40℃~250℃,更佳為120℃~250℃。產生胺的溫度的上限更佳為240℃以下,進而更佳為230℃以下,尤佳為220℃以下,更尤佳為200℃以下,進而尤佳為190℃以下,特佳為180℃以下。產生胺的溫度的下限進而更佳為130℃以上,尤佳為135℃以上。胺產生溫度可使用示差掃描熱量測定,於耐壓膠囊中以5℃/min將熱胺產生劑加熱至250℃為止,讀取溫度最低的發熱峰值的峰值溫度,並將峰值溫度作為胺產生溫度來進行測定。 若熱胺產生劑的產生胺的溫度為40℃以上,則於保存過程中難以產生胺,因此可製備穩定性更優異的組成物。若熱胺產生劑的產生胺的溫度為250℃以下,則可降低含有雜環的聚合物前驅物的環化溫度。The amine generating temperature of the hot amine generating agent in the present invention is preferably from 40 ° C to 250 ° C, more preferably from 120 ° C to 250 ° C. The upper limit of the temperature at which the amine is produced is more preferably 240 ° C or less, more preferably 230 ° C or less, still more preferably 220 ° C or less, still more preferably 200 ° C or less, still more preferably 190 ° C or less, and particularly preferably 180 ° C or less. . The lower limit of the temperature at which the amine is produced is more preferably 130 ° C or higher, and particularly preferably 135 ° C or higher. The amine production temperature can be measured by differential scanning calorimetry, and the hot amine generating agent is heated to 250 ° C at 5 ° C / min in a pressure resistant capsule, the peak temperature of the lowest heat generating peak is read, and the peak temperature is taken as the amine generating temperature. To carry out the measurement. When the temperature at which the amine produced by the heat amine generator is 40° C. or more, it is difficult to produce an amine during storage, and thus a composition having more excellent stability can be prepared. If the temperature at which the amine produced by the heat amine generator is 250 ° C or lower, the cyclization temperature of the polymer precursor containing the hetero ring can be lowered.

於本發明中,熱胺產生劑所產生的胺較佳為二級胺或三級胺,更佳為三級胺。三級胺因鹼性高,故可進一步降低含有雜環的聚合物前驅物的環化溫度。另外,藉由熱胺產生劑所產生的胺的沸點較佳為80℃以上,更佳為100℃以上,進而更佳為140℃以上。 另外,所產生的胺的分子量較佳為60~300。下限更佳為100以上,進而更佳為120以上。上限更佳為250以下,進而更佳為200以下。再者,分子量的值為根據結構式所求出的理論值。In the present invention, the amine produced by the hot amine generating agent is preferably a secondary amine or a tertiary amine, more preferably a tertiary amine. Since the tertiary amine has a high basicity, the cyclization temperature of the heterocyclic-containing polymer precursor can be further lowered. Further, the boiling point of the amine produced by the hot amine generating agent is preferably 80 ° C or higher, more preferably 100 ° C or higher, and still more preferably 140 ° C or higher. Further, the molecular weight of the produced amine is preferably from 60 to 300. The lower limit is more preferably 100 or more, and still more preferably 120 or more. The upper limit is preferably 250 or less, and more preferably 200 or less. Further, the value of the molecular weight is a theoretical value obtained from the structural formula.

於本發明中,所述酸性化合物(A1)較佳為含有選自銨鹽及由後述的通式(1A)所表示的化合物中的一種以上。In the present invention, the acidic compound (A1) preferably contains one or more selected from the group consisting of an ammonium salt and a compound represented by the formula (1A) to be described later.

於本發明中,所述銨鹽(A2)較佳為酸性化合物。再者,所述銨鹽(A2)可為含有若加熱至40℃~250℃(較佳為120℃~200℃)則產生胺的酸性化合物的化合物,亦可為不含若加熱至40℃~250℃(較佳為120℃~200℃)則產生胺的酸性化合物的化合物。In the present invention, the ammonium salt (A2) is preferably an acidic compound. Further, the ammonium salt (A2) may be a compound containing an acidic compound which generates an amine when heated to 40 ° C to 250 ° C (preferably 120 ° C to 200 ° C), or may be heated to 40 ° C if not contained. A compound which produces an acidic compound of an amine at -250 ° C (preferably 120 ° C to 200 ° C).

<<銨鹽>> 於本發明中,所謂銨鹽,是指由通式(11)、或通式(12)所表示的銨陽離子與陰離子的鹽。陰離子可經由共價鍵而與銨陽離子的任何一部分進行鍵結,亦可存在於銨陽離子的分子外,較佳為存在於銨陽離子的分子外。再者,所謂陰離子存在於銨陽離子的分子外,是指銨陽離子與陰離子未經由共價鍵進行鍵結的情況。以下,亦將陽離子部的分子外的陰離子稱為抗衡陰離子。 [化25]通式(11)、通式(12)中,R1N ~R6N 分別獨立地表示氫原子或烴基,R7N 表示烴基。R1N 與R2N 、R3N 與R4N 、R5N 與R6N 、R5N 與R7N 分別可鍵結而形成環。<<Ammonium salt>> In the present invention, the ammonium salt refers to a salt of an ammonium cation represented by the formula (11) or the formula (12) and an anion. The anion may be bonded to any part of the ammonium cation via a covalent bond or may be present outside the molecule of the ammonium cation, preferably outside the molecule of the ammonium cation. Further, the fact that the anion is present outside the molecule of the ammonium cation means that the ammonium cation and the anion are not bonded via a covalent bond. Hereinafter, the extra-molecular anion of the cation portion is also referred to as a counter anion. [化25] In the general formulae (11) and (12), R 1N to R 6N each independently represent a hydrogen atom or a hydrocarbon group, and R 7N represents a hydrocarbon group. R 1N and R 2N , R 3N and R 4N , R 5N and R 6N , and R 5N and R 7N may each bond to form a ring.

於本發明中,銨鹽較佳為具有pKa1為0~4的陰離子與銨陽離子。陰離子的pKa1的上限更佳為3.5以下,進而更佳為3.2以下。下限更佳為0.5以上,進而更佳為1.0以上。若陰離子的pKa1為所述範圍,則可於低溫下對含有雜環的聚合物前驅物進行環化,進而,可提升組成物的穩定性。若pKa1為4以下,則熱胺產生劑的穩定性良好,可抑制無加熱而產生胺的情況,且組成物的穩定性良好。若pKa1為0以上,則所產生的胺難以被中和,含有雜環的聚合物前驅物的環化效率良好。 陰離子的種類較佳為選自羧酸根陰離子、苯酚陰離子、磷酸根陰離子及硫酸根陰離子中的一種,就可使鹽的穩定性與熱分解性並存這一理由而言,更佳為羧酸根陰離子。即,銨鹽更佳為銨陽離子與羧酸根陰離子的鹽。 羧酸根陰離子較佳為具有兩個以上的羧基的二價以上的羧酸的陰離子,更佳為二價的羧酸的陰離子。根據該形態,可製成可進一步提升組成物的穩定性、硬化性及顯影性的熱胺產生劑。尤其,藉由使用二價的羧酸的陰離子,可進一步提升組成物的穩定性、硬化性及顯影性。 於本發明中,羧酸根陰離子較佳為pKa1為4以下的羧酸的陰離子。pKa1更佳為3.5以下,進而更佳為3.2以下。根據該形態,可進一步提升組成物的穩定性。 此處,所謂pKa1,表示酸的第一解離常數的倒數的對數,可參照「有機結構的物理鑒定法(Determination of Organic Structures by Physical Methods)」(著者:Brown, H. C., McDaniel, D. H., Hafliger, O., Nachod, F. C.;編輯:Braude, E. A., Nachod, F. C.;美國學術出版社(Academic Press),紐約,1955)、或「用於生化研究的資料(Data for Biochemical Research)」(著者:Dawson, R. M. C.等;牛津,克拉倫登出版社(Clarendon Press), 1959)中記載的值。關於該些文獻中無記載的化合物,使用利用ACD/pKa(ACD/Labs製造)的軟體並根據結構式所算出的值。In the present invention, the ammonium salt is preferably an anion having an pKa1 of 0 to 4 and an ammonium cation. The upper limit of the pKa1 of the anion is more preferably 3.5 or less, still more preferably 3.2 or less. The lower limit is more preferably 0.5 or more, and still more preferably 1.0 or more. When the pKa1 of the anion is in the above range, the heterocyclic-containing polymer precursor can be cyclized at a low temperature, and the stability of the composition can be improved. When pKa1 is 4 or less, the stability of the heat amine generating agent is good, and it is possible to suppress the occurrence of an amine without heating, and the stability of the composition is good. When pKa1 is 0 or more, the produced amine is hardly neutralized, and the cyclization efficiency of the heterocyclic-containing polymer precursor is good. The type of the anion is preferably one selected from the group consisting of a carboxylate anion, a phenol anion, a phosphate anion, and a sulfate anion, and the carboxylate anion is more preferable because the stability of the salt and the thermal decomposition are coexisting. . That is, the ammonium salt is more preferably a salt of an ammonium cation and a carboxylate anion. The carboxylate anion is preferably an anion of a divalent or higher carboxylic acid having two or more carboxyl groups, more preferably an anion of a divalent carboxylic acid. According to this aspect, a hot amine generator which can further improve the stability, hardenability, and developability of the composition can be obtained. In particular, by using an anion of a divalent carboxylic acid, the stability, hardenability, and developability of the composition can be further improved. In the present invention, the carboxylate anion is preferably an anion of a carboxylic acid having a pKa1 of 4 or less. The pKa1 is more preferably 3.5 or less, and still more preferably 3.2 or less. According to this aspect, the stability of the composition can be further improved. Here, pKa1 represents the logarithm of the reciprocal of the first dissociation constant of the acid, and can be referred to as "Determination of Organic Structures by Physical Methods" (author: Brown, HC, McDaniel, DH, Hafliger, O., Nachod, FC; Editor: Braude, EA, Nachod, FC; American Academic Press (New York, 1955), or "Data for Biochemical Research" (author: Dawson) , RMC, et al; Oxford, Clarendon Press, 1959). For the compounds not described in these documents, a value calculated by a structural formula using ACD/pKa (manufactured by ACD/Labs) was used.

於本發明中,羧酸根陰離子較佳為由式(X1)表示。 [化26]於式(X1)中,EWG表示拉電子基。In the present invention, the carboxylate anion is preferably represented by the formula (X1). [Chem. 26] In the formula (X1), EWG represents a pull electron group.

於本發明中,所謂拉電子基,是指哈米特(Hammett)的取代基常數σm顯示正值者。此處,σm於都野雄甫的總論、「有機合成化學協會誌」第23卷第8號(1965)P.631-642中有詳細說明。再者,本發明的拉電子基並不限定於所述文獻中所記載的取代基。 作為σm顯示正值的取代基的例子,例如可列舉:CF3 基(σm=0.43)、CF3 CO基(σm=0.63)、HC≡C基(σm=0.21)、CH2 =CH基(σm=0.06)、Ac基(σm=0.38)、MeOCO基(σm=0.37)、MeCOCH=CH基(σm=0.21)、PhCO基(σm=0.34)、H2 NCOCH2 基(σm=0.06)等。再者,Me表示甲基,Ac表示乙醯基,Ph表示苯基。In the present invention, the electron withdrawing group means that the substituent constant σm of Hammett shows a positive value. Here, σm is described in detail in the general theory of Tono Hiroshi, "Organic Synthetic Chemistry Association", Vol. 23, No. 8 (1965) P.631-642. Further, the electron withdrawing group of the present invention is not limited to the substituents described in the literature. Examples of the substituent having a positive value of σm include a CF 3 group (σm = 0.43), a CF 3 CO group (σm = 0.63), a HC ≡ C group (σm = 0.21), and a CH 2 = CH group ( Σm=0.06), Ac group (σm=0.38), MeOCO group (σm=0.37), MeCOCH=CH group (σm=0.21), PhCO group (σm=0.34), H 2 NCOCH 2 group (σm=0.06), etc. . Further, Me represents a methyl group, Ac represents an ethyl group, and Ph represents a phenyl group.

於本發明中,EWG較佳為表示由下述通式(EWG-1)~通式(EWG-6)所表示的基。 [化27]式中,Rx1 ~Rx3 分別獨立地表示氫原子、烷基、烯基、芳基、羥基或羧基,Ar表示芳基。 烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烷基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。作為取代基,較佳為羧基。 烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。烯基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烯基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。作為取代基,較佳為羧基。 芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。芳基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。作為取代基,較佳為羧基。In the present invention, EWG preferably represents a group represented by the following formula (EWG-1) to formula (EWG-6). [化27] In the formula, R x1 to R x3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, a hydroxyl group or a carboxyl group, and Ar represents an aryl group. The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkyl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. As a substituent, a carboxyl group is preferable. The number of carbon atoms of the alkenyl group is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkenyl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. As a substituent, a carboxyl group is preferable. The carbon number of the aryl group is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12. The aryl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. As a substituent, a carboxyl group is preferable.

於本發明中,羧酸根陰離子亦較佳為由下述通式(X)所表示者。 [化28]於通式(X)中,L10 表示單鍵,或選自伸烷基、伸烯基、伸芳基、-NRX -及該些的組合中的二價的連結基,RX 表示氫原子、烷基、烯基或芳基。In the present invention, the carboxylate anion is also preferably represented by the following formula (X). [化28] In the formula (X), L 10 represents a single bond, or a divalent linking group selected from the group consisting of an alkyl group, an alkenyl group, an extended aryl group, -NR X - and a combination thereof, and R X represents hydrogen. Atom, alkyl, alkenyl or aryl.

L10 所表示的伸烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。伸烷基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。伸烷基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。 L10 所表示的伸烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。伸烯基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。伸烯基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。 L10 所表示的伸芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。伸芳基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。The carbon number of the alkylene group represented by L 10 is preferably from 1 to 30, more preferably from 1 to 20, still more preferably from 1 to 10. The alkylene group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkylene group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. The carbon number of the alkenyl group represented by L 10 is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkenyl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. The carbon number of the aryl group represented by L 10 is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12. The aryl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have.

RX 所表示的烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烷基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。 RX 所表示的烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。烯基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烯基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。 RX 所表示的芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。芳基可具有取代基,亦可未經取代。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。The alkyl group represented by R X preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkyl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. The number of carbon atoms of the alkenyl group represented by R X is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkenyl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have. The carbon number of the aryl group represented by R X is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12. The aryl group may have a substituent or may be unsubstituted. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have.

作為羧酸根陰離子的具體例,可列舉:順丁烯二酸根陰離子、鄰苯二甲酸根陰離子、N-苯基亞胺基二乙酸根陰離子及草酸根陰離子。可較佳地使用該些具體例。Specific examples of the carboxylate anion include a maleate anion, a phthalate anion, an N-phenyliminodiacetate anion, and an oxalate anion. These specific examples can be preferably used.

銨陽離子較佳為由式(Y1-1)~式(Y1-6)的任一者表示。 [化29] The ammonium cation is preferably represented by any one of the formulae (Y1-1) to (Y1-6). [化29]

於所述式中,R101 表示n價的有機基, R102 ~R111 分別獨立地表示氫原子、或烴基, R150 及R151 分別獨立地表示烴基, R104 與R105 、R104 與R150 、R107 與R108 、及R109 與R110 可相互鍵結而形成環, Ar101 及Ar102 分別獨立地表示芳基, n表示1以上的整數, m表示0~5的整數。In the formula, R 101 represents an n-valent organic group, R 102 to R 111 each independently represent a hydrogen atom or a hydrocarbon group, and R 150 and R 151 each independently represent a hydrocarbon group, and R 104 and R 105 , R 104 and R 150 , R 107 and R 108 , and R 109 and R 110 may be bonded to each other to form a ring, and Ar 101 and Ar 102 each independently represent an aryl group, n represents an integer of 1 or more, and m represents an integer of 0 to 5.

R101 表示n價的有機基。作為一價的有機基,可列舉:烷基、伸烷基、芳基等。作為二價以上的有機基,可列舉自一價的有機基中去除一個以上的氫原子而變成n價的基者。 R101 較佳為芳基。作為芳基的具體例,可列舉後述的Ar10 中所說明者。R 101 represents an n-valent organic group. The monovalent organic group may, for example, be an alkyl group, an alkylene group or an aryl group. Examples of the divalent or higher organic group include one in which one or more hydrogen atoms are removed from the monovalent organic group to form an n-valent group. R 101 is preferably an aryl group. Specific examples of the aryl group include those described in Ar 10 to be described later.

R102 ~R111 分別獨立地表示氫原子、或烴基,R150 及R151 分別獨立地表示烴基。 作為R102 ~R111 、R150 及R151 所表示的烴基,較佳為烷基、烯基或芳基。烷基、烯基及芳基可進一步具有取代基。作為取代基,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。R 102 to R 111 each independently represent a hydrogen atom or a hydrocarbon group, and R 150 and R 151 each independently represent a hydrocarbon group. The hydrocarbon group represented by R 102 to R 111 , R 150 and R 151 is preferably an alkyl group, an alkenyl group or an aryl group. The alkyl group, the alkenyl group and the aryl group may further have a substituent. The substituent may be mentioned as a substituent which the organic group represented by A 1 mentioned later may have.

烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烷基可具有取代基,亦可未經取代。 烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。烯基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。烯基可具有取代基,亦可未經取代。 芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。芳基可具有取代基,亦可未經取代。The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkyl group may have a substituent or may be unsubstituted. The number of carbon atoms of the alkenyl group is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The alkenyl group may have a substituent or may be unsubstituted. The carbon number of the aryl group is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12. The aryl group may have a substituent or may be unsubstituted.

Ar101 及Ar102 分別獨立地表示芳基。 芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。芳基可具有取代基,亦可未經取代。Ar 101 and Ar 102 each independently represent an aryl group. The carbon number of the aryl group is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12. The aryl group may have a substituent or may be unsubstituted.

R104 與R105 、R104 與R150 、R107 與R108 、及R109 與R110 可相互鍵結而形成環。作為環,可列舉:環狀的脂肪族(非芳香性的烴環)、芳香環、雜環等。環可為單環,亦可為多環。作為所述基進行鍵結而形成環時的連結基,可列舉選自由-CO-、-O-、-NH-、二價的脂肪族基、二價的芳基及該些的組合所組成的群組中的二價的連結基。作為所形成的環的具體例,例如可列舉:吡咯啶環、吡咯環、哌啶環、吡啶環、咪唑環、吡唑環、噁唑環、噻唑環、吡嗪環、嗎啉環、噻嗪環、吲哚環、異吲哚環、苯并咪唑環、嘌呤環、喹啉環、異喹啉環、喹噁啉環、啉環、咔唑環等。R 104 and R 105 , R 104 and R 150 , R 107 and R 108 , and R 109 and R 110 may be bonded to each other to form a ring. Examples of the ring include a cyclic aliphatic (non-aromatic hydrocarbon ring), an aromatic ring, and a hetero ring. The ring may be a single ring or a multiple ring. The linking group when the group is bonded to form a ring may be selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aryl group, and a combination thereof. A divalent linkage in the group. Specific examples of the ring to be formed include a pyrrolidine ring, a pyrrole ring, a piperidine ring, a pyridine ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a pyrazine ring, a morpholine ring, and a thiophene ring. a azine ring, an anthracene ring, an isoindole ring, a benzimidazole ring, an anthracene ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, A porphyrin ring, an oxazole ring, and the like.

於本發明中,銨陽離子較佳為由式(Y1-1)或式(Y1-2)所表示的結構,更佳為由式(Y1-1)或式(Y1-2)表示、R101 為芳基的結構,特佳為由式(Y1-1)表示、R101 為芳基的結構。即,於本發明中,銨陽離子較佳為由下述通式(Y)表示。 [化30]通式(Y)中,Ar10 表示芳基,R11 ~R15 分別獨立地表示氫原子或烴基,R14 與R15 可相互鍵結而形成環,n表示1以上的整數。In the present invention, the ammonium cation is preferably a structure represented by the formula (Y1-1) or the formula (Y1-2), more preferably represented by the formula (Y1-1) or the formula (Y1-2), R 101 The structure of the aryl group is particularly preferably a structure represented by the formula (Y1-1) and R 101 is an aryl group. That is, in the present invention, the ammonium cation is preferably represented by the following formula (Y). [化30] In the general formula (Y), Ar 10 represents an aryl group, and R 11 to R 15 each independently represent a hydrogen atom or a hydrocarbon group, and R 14 and R 15 may be bonded to each other to form a ring, and n represents an integer of 1 or more.

Ar10 表示芳基。作為芳基,具體而言,可列舉:經取代或未經取代的苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、乙烷合萘環、菲環、蒽環、稠四苯環、環、三伸苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹噁唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并吡喃環、呫噸環、啡噁噻環、啡噻嗪環、及啡嗪環。其中,就保存穩定性與高感度化的觀點而言,較佳為苯環、萘環、蒽環、啡噻嗪環、或咔唑環,最佳為苯環或萘環。 作為芳基可具有的取代基的例子,可列舉後述的A1 所表示的有機基可具有的取代基中所說明者。Ar 10 represents an aryl group. Specific examples of the aryl group include a substituted or unsubstituted benzene ring, a naphthalene ring, a pentylene ring, an anthracene ring, an anthracene ring, a heptene ring, a terpene ring, an anthracene ring, and a fused pentabenzene. Ring, ethane naphthalene ring, phenanthrene ring, anthracene ring, thick tetraphenyl ring, Ring, triphenylene, anthracene, biphenyl, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, pyridazine Ring, anthracene ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolizine ring, quinoline ring, pyridazine ring, naphthyridine ring, quinoxaline ring, quinoxaline ring, different Quinoline ring, carbazole ring, phenazin ring, acridine ring, phenanthroline ring, thioxan ring, benzopyran ring, xanthene ring, morphine ring, phenothiazine ring, and phenazine ring. Among them, from the viewpoint of storage stability and high sensitivity, a benzene ring, a naphthalene ring, an anthracene ring, a phenothiazine ring, or an oxazole ring is preferred, and a benzene ring or a naphthalene ring is preferred. Examples of the aryl group may have a substituent group, A 1 described later include an organic group represented by may have a substituent group as those described.

R11 及R12 分別獨立地表示氫原子或烴基。作為烴基,並無特別限定,較佳為烷基、烯基或芳基。 R11 及R12 較佳為氫原子。R 11 and R 12 each independently represent a hydrogen atom or a hydrocarbon group. The hydrocarbon group is not particularly limited, and is preferably an alkyl group, an alkenyl group or an aryl group. R 11 and R 12 are preferably a hydrogen atom.

烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷基可為直鏈狀、分支狀、環狀的任一種。 作為直鏈狀或分支狀的烷基,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二基、十四基、十八基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、及2-乙基己基。 環狀的烷基可為單環的環狀的烷基,亦可為多環的環狀的烷基。作為單環的環狀的烷基,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基。作為多環的環狀的烷基,例如可列舉:金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基及蒎烯基。其中,就與高感度化的並存的觀點而言,最佳為環己基。 烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。烯基可為直鏈狀、分支狀、環狀的任一種,較佳為直鏈狀或分支狀,更佳為直鏈狀。 芳基的碳數較佳為6~30,更佳為6~20,進而更佳為6~12。The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkyl group may be any of a linear chain, a branched chain, and a cyclic chain. Examples of the linear or branched alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, a dodecyl group, and a tetradecyl group. Base, octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl, and 2-ethylhexyl. The cyclic alkyl group may be a monocyclic cyclic alkyl group or a polycyclic cyclic alkyl group. Examples of the monocyclic cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and a cyclooctyl group. Examples of the polycyclic cyclic alkyl group include adamantyl group, norbornyl group, borneol group, nonenyl group, decahydronaphthyl group, tricyclodecyl group, tetracyclodecyl group, and indenyl group. , dicyclohexyl and decenyl. Among them, from the viewpoint of coexistence with high sensitivity, the cyclohexyl group is most preferable. The number of carbon atoms of the alkenyl group is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be linear, branched or cyclic, and is preferably linear or branched, and more preferably linear. The carbon number of the aryl group is preferably from 6 to 30, more preferably from 6 to 20, still more preferably from 6 to 12.

R13 ~R15 表示氫原子或烴基。 作為烴基,可列舉所述R11 、R12 中所說明的烴基。R13 ~R15 特佳為烷基,較佳的形態亦與R11 、R12 中所說明者相同。R 13 to R 15 represent a hydrogen atom or a hydrocarbon group. Examples of the hydrocarbon group include the hydrocarbon groups described in the above R 11 and R 12 . R 13 to R 15 are particularly preferably an alkyl group, and a preferred embodiment is also the same as those described for R 11 and R 12 .

R14 與R15 可相互鍵結而形成環。作為環,可列舉:環狀脂肪族(非芳香性的烴環)、芳香環、雜環等。環可為單環,亦可為多環。作為R4 與R5 進行鍵結而形成環時的連結基,可列舉選自由-CO-、-O-、-NH-、二價的脂肪族基、二價的芳基及該些的組合所組成的群組中的二價的連結基。作為所形成的環的具體例,例如可列舉:吡咯啶環、吡咯環、哌啶環、吡啶環、咪唑環、吡唑環、噁唑環、噻唑環、吡嗪環、嗎啉環、噻嗪環、吲哚環、異吲哚環、苯并咪唑環、嘌呤環、喹啉環、異喹啉環、喹噁啉環、啉環、咔唑環等。R 14 and R 15 may be bonded to each other to form a ring. Examples of the ring include a cyclic aliphatic group (non-aromatic hydrocarbon ring), an aromatic ring, and a hetero ring. The ring may be a single ring or a multiple ring. Examples of the linking group when R 4 and R 5 are bonded to each other to form a ring include -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aryl group, and a combination thereof. A divalent linking group in the group formed. Specific examples of the ring to be formed include a pyrrolidine ring, a pyrrole ring, a piperidine ring, a pyridine ring, an imidazole ring, a pyrazole ring, an oxazole ring, a thiazole ring, a pyrazine ring, a morpholine ring, and a thiophene ring. a azine ring, an anthracene ring, an isoindole ring, a benzimidazole ring, an anthracene ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, A porphyrin ring, an oxazole ring, and the like.

R13 ~R15 較佳為R14 與R15 相互鍵結而形成環,或者R13 為碳數5~30(更佳為碳數6~18)的直鏈烷基、R14 及R15 分別獨立地為碳數1~3(更佳為碳數1或2)的烷基。根據該形態,可容易產生沸點高的胺種。 另外,就所產生的胺種的鹼性或沸點的觀點而言,R13 ~R15 較佳為R13 與R14 及R15 的碳原子的總數為7~30,更佳為10~20。 另外,就容易產生沸點高的胺種這一理由而言,通式(Y)中的「-NR13 R14 R15 」的化學式量較佳為80~2,000,更佳為100~500。R 13 to R 15 are preferably a ring in which R 14 and R 15 are bonded to each other to form a ring, or R 13 is a linear alkyl group having 5 to 30 carbon atoms (more preferably 6 to 18 carbon atoms), R 14 and R 15 . Each is independently an alkyl group having 1 to 3 carbon atoms (more preferably 1 or 2 carbon atoms). According to this aspect, an amine species having a high boiling point can be easily produced. Further, from the viewpoint of the basicity or boiling point of the amine species to be produced, R 13 to R 15 are preferably a total of 7 to 30, more preferably 10 to 20 carbon atoms of R 13 and R 14 and R 15 . . Further, the reason for the fact that the amine group having a high boiling point is likely to be generated is preferably a chemical formula of "-NR 13 R 14 R 15 " in the formula (Y) of from 80 to 2,000, more preferably from 100 to 500.

另一方面,作為用以進一步提升與銅配線的密接性的實施形態,可列舉如下的形態:於通式(Y)中,R13 及R14 為甲基或乙基,R15 為碳數5以上的直鏈狀、分支狀或環狀的烷基、或者芳基。於本實施形態中,較佳為:R13 及R14 為甲基,R15 為碳數5~20的直鏈烷基、碳數6~17的分支烷基、碳數6~10的環狀烷基或苯基,更佳為:R13 及R14 為甲基,R15 為碳數5~10的直鏈烷基、碳數6~10的分支烷基、碳數6~8的環狀烷基或苯基。藉由如此般降低胺種的疏水性,即便當胺附著於銅配線上時,亦可更有效地抑制銅表面與聚醯亞胺的親和性降低的情況。於本實施形態中,Ar10 、R11 、R12 及n的較佳的範圍與所述相同。On the other hand, as an embodiment for further improving the adhesion to the copper wiring, in the general formula (Y), R 13 and R 14 are a methyl group or an ethyl group, and R 15 is a carbon number. 5 or more linear, branched or cyclic alkyl groups or aryl groups. In the present embodiment, R 13 and R 14 are preferably a methyl group, and R 15 is a linear alkyl group having 5 to 20 carbon atoms, a branched alkyl group having 6 to 17 carbon atoms, or a ring having 6 to 10 carbon atoms. More preferably, R 13 and R 14 are a methyl group, R 15 is a linear alkyl group having 5 to 10 carbon atoms, a branched alkyl group having 6 to 10 carbon atoms, or a carbon number of 6 to 8. Cyclic alkyl or phenyl. By thus reducing the hydrophobicity of the amine species, even when the amine is attached to the copper wiring, the affinity between the copper surface and the polyimide may be more effectively suppressed. In the present embodiment, the preferred ranges of Ar 10 , R 11 , R 12 and n are the same as described above.

<<<由通式(1A)所表示的化合物>>> 於本發明中,酸性化合物為由下述通式(1A)所表示的化合物亦較佳。該化合物於室溫下為酸性,但藉由加熱,羧基脫碳酸或脫水環化而消失,藉此之前得到中和而鈍化的胺部位變成活性,由此變成鹼性。以下,對通式(1A)進行說明。<<<Compound represented by the general formula (1A)>>> In the present invention, the acidic compound is preferably a compound represented by the following formula (1A). This compound is acidic at room temperature, but disappears by heating, carboxy decarbonation or dehydration cyclization, whereby the amine moiety which has been previously neutralized and deactivated becomes active, thereby becoming alkaline. Hereinafter, the general formula (1A) will be described.

通式(1A) [化31]於通式(1A)中,A1 表示p價的有機基,R1 表示一價的有機基,L1 表示(m+1)價的有機基,m表示1以上的整數,p表示1以上的整數。General formula (1A) [Chem. 31] In the formula (1A), A 1 represents a p-valent organic group, R 1 represents a monovalent organic group, L 1 represents an (m+1)-valent organic group, m represents an integer of 1 or more, and p represents 1 or more. The integer.

通式(1A)中,A1 表示p價的有機基。作為有機基,可列舉脂肪族基、芳基等,較佳為芳基。藉由將A1 設為芳基,可容易於更低的溫度下產生沸點高的胺。藉由提高所產生的胺的沸點,可抑制由含有雜環的聚合物前驅物的硬化時的加熱而引起的揮發或分解,使含有雜環的聚合物前驅物的環化更有效地進行。 作為一價的脂肪族基,例如可列舉:烷基、烯基等。 烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷基可為直鏈狀、分支狀、環狀的任一種。烷基可具有取代基,亦可未經取代。作為烷基的具體例,可列舉:甲基、乙基、第三丁基、十二基、環戊基、環己基、環庚基、金剛烷基等。 烯基的碳數較佳為2~30,更佳為2~20,進而更佳為2~10。烯基可為直鏈狀、分支狀、環狀的任一種。烯基可具有取代基,亦可未經取代。作為烯基,可列舉:乙烯基、(甲基)烯丙基等。 作為二價以上的脂肪族基,可列舉自所述一價的脂肪族基中去除一個以上的氫原子而成的基。 芳基可為單環,亦可為多環。芳基亦可為包含雜原子的雜芳基。芳基可具有取代基,亦可未經取代。較佳為未經取代。作為芳基的具體例,可列舉:苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、茚烯環、苝環、稠五苯環、苊烯環、菲環、蒽環、稠四苯環、環、三伸苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹噁唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并吡喃環、呫噸環、啡噁噻環、啡噻嗪環、及啡嗪環,最佳為苯環。 芳基的多個芳香環可經由單鍵或後述的連結基而連結。作為連結基,例如較佳為伸烷基。伸烷基較佳為直鏈狀、分支狀的任一種。作為多個芳香環經由單鍵或連結基連結而成的芳基的具體例,可列舉:聯苯、二苯基甲烷、二苯基丙烷、二苯基異丙烷、三苯基甲烷、四苯基甲烷等。In the formula (1A), A 1 represents a p-valent organic group. The organic group may, for example, be an aliphatic group or an aryl group, and is preferably an aryl group. By setting A 1 as an aryl group, it is easy to produce an amine having a high boiling point at a lower temperature. By increasing the boiling point of the produced amine, volatilization or decomposition by heating during curing of the heterocyclic-containing polymer precursor can be suppressed, and cyclization of the heterocyclic-containing polymer precursor can be more efficiently performed. Examples of the monovalent aliphatic group include an alkyl group and an alkenyl group. The alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkyl group may be any of a linear chain, a branched chain, and a cyclic chain. The alkyl group may have a substituent or may be unsubstituted. Specific examples of the alkyl group include a methyl group, an ethyl group, a tert-butyl group, a dodecyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, and an adamantyl group. The number of carbon atoms of the alkenyl group is preferably from 2 to 30, more preferably from 2 to 20, still more preferably from 2 to 10. The alkenyl group may be any of a linear chain, a branched chain, and a cyclic chain. The alkenyl group may have a substituent or may be unsubstituted. Examples of the alkenyl group include a vinyl group and a (meth)allyl group. Examples of the divalent or higher aliphatic group include a group in which one or more hydrogen atoms are removed from the monovalent aliphatic group. The aryl group may be a single ring or a polycyclic ring. The aryl group may also be a heteroaryl group containing a hetero atom. The aryl group may have a substituent or may be unsubstituted. It is preferably unsubstituted. Specific examples of the aryl group include a benzene ring, a naphthalene ring, a pentylene ring, an anthracene ring, an anthracene ring, a heptene ring, a terpene ring, an anthracene ring, a fused pentene ring, a terpene ring, and a phenanthrene ring. , anthracene ring, thick tetraphenyl ring, Ring, triphenylene, anthracene, biphenyl, pyrrole, furan, thiophene, imidazole, oxazole, thiazole, pyridine, pyrazine, pyrimidine, pyridazine, pyridazine Ring, anthracene ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolizine ring, quinoline ring, pyridazine ring, naphthyridine ring, quinoxaline ring, quinoxaline ring, different Quinoline ring, carbazole ring, phenazin ring, acridine ring, phenanthroline ring, thioxan ring, benzopyran ring, xanthene ring, morphine ring, phenothiazine ring, and phenazine ring, most Good for benzene ring. The plurality of aromatic rings of the aryl group may be linked via a single bond or a linking group to be described later. As the linking group, for example, an alkyl group is preferred. The alkylene group is preferably a linear or branched form. Specific examples of the aryl group in which a plurality of aromatic rings are bonded via a single bond or a linking group include biphenyl, diphenylmethane, diphenylpropane, diphenylisopropane, triphenylmethane, and tetraphenyl. Methane and the like.

作為A1 所表示的有機基可具有的取代基的例子,例如可列舉:氟原子、氯原子、溴原子及碘原子等鹵素原子;甲氧基、乙氧基及第三丁氧基等烷氧基;苯氧基及對甲苯氧基等芳氧基;甲氧基羰基、丁氧基羰基及苯氧基羰基等烷氧基羰基;乙醯氧基、丙醯氧基及苯甲醯氧基等醯氧基;乙醯基、苯甲醯基、異丁醯基、丙烯醯基、甲基丙烯醯基及甲氧草醯基等醯基;甲基巰基及第三丁基巰基等烷基巰基;苯基巰基及對甲苯基巰基等芳基巰基;甲基、乙基、第三丁基及十二基等直鏈狀或分支狀的烷基;氟化烷基等鹵化烷基;環戊基、環己基、環庚基及金剛烷基等環狀的烷基;苯基、對甲苯基、二甲苯基、枯烯基、萘基、蒽基及菲基等芳基;羥基;羧基;甲醯基;磺基;氰基;烷基胺基羰基;芳基胺基羰基;磺醯胺基;矽烷基;胺基;單烷基胺基;二烷基胺基;芳基胺基;二芳基胺基;硫氧基;及該些的組合。Examples of the substituent which the organic group represented by A 1 may include, for example, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom; or an alkyl group such as a methoxy group, an ethoxy group or a third butoxy group; An oxy group such as a phenoxy group and a p-tolyloxy group; an alkoxycarbonyl group such as a methoxycarbonyl group, a butoxycarbonyl group or a phenoxycarbonyl group; an ethoxy group, a propenyloxy group and a benzamidine group; An oxiranyl group; an alkyl group such as an alkyl group, a benzamidine group, an isobutyl group, an acryl group, a methacryl group, and a methoxycyanyl group; an alkyl group such as a methyl group or a tert-butyl group; An aryl fluorenyl group such as a phenyl fluorenyl group and a p-tolyl fluorenyl group; a linear or branched alkyl group such as a methyl group, an ethyl group, a tert-butyl group or a dodecyl group; a halogenated alkyl group such as a fluorinated alkyl group; a cyclic alkyl group such as a cyclyl group, a cyclohexyl group, a cycloheptyl group or an adamantyl group; an aryl group such as a phenyl group, a p-tolyl group, a xylyl group, a cumenyl group, a naphthyl group, an anthracenyl group or a phenanthryl group; a hydroxyl group; Mercapto; sulfo; cyano; alkylaminocarbonyl; arylaminocarbonyl; sulfonylamino; decylalkyl; amine; monoalkylamine; dialkylamine ; Aryl group; diaryl group; sulfoxy; and combinations of the plurality.

L1 表示(m+1)價的連結基。作為連結基,並無特別限定,可列舉:-COO-、-OCO-、-CO-、-O-、-S-、-SO-、-SO2 -、伸烷基(較佳為碳數1~10的直鏈伸烷基或分支伸烷基)、伸環烷基(較佳為碳數3~10的伸環烷基)、伸烯基(較佳為碳數2~10的直鏈伸烯基或分支伸烯基)、及該些的多個連結而成的連結基等。連結基的總碳數較佳為3以下。連結基較佳為伸烷基、伸環烷基、伸烯基,更佳為直鏈伸烷基或分支伸烷基,進而更佳為直鏈伸烷基,特佳為伸乙基或亞甲基,最佳為亞甲基。L 1 represents a (m+1)-valent linking group. The linking group is not particularly limited, and examples thereof include -COO-, -OCO-, -CO-, -O-, -S-, -SO-, -SO 2 -, and an alkylene group (preferably a carbon number). a linear alkyl group or a branched alkyl group of 1 to 10, a cycloalkyl group (preferably a cycloalkyl group having 3 to 10 carbon atoms), an alkenyl group (preferably a carbon having a carbon number of 2 to 10) a chain extending alkenyl group or a branched chain extending alkenyl group), and a plurality of linking groups formed by these. The total carbon number of the linking group is preferably 3 or less. The linking group is preferably an alkyl group, a cycloalkyl group, an alkenyl group group, more preferably a linear alkyl group or a branched alkyl group, and more preferably a linear alkyl group, particularly preferably an ethyl group or an alkyl group. Methyl, most preferably methylene.

R1 表示一價的有機基。作為一價的有機基,可列舉脂肪族基、芳基等。關於脂肪族基、芳基,可列舉所述A1 中所說明者。R1 所表示的一價的有機基可具有取代基。 R1 較佳為具有羧基的基。即,R1 較佳為由式所表示的基。   -L2 -(COOH)n 式中,L2 表示(n+1)價的連結基,n表示1以上的整數。 L2 所表示的連結基可列舉所述L1 中所說明的基,較佳的範圍亦相同,特佳為伸乙基或亞甲基,最佳為亞甲基。 n表示1以上的整數,較佳為1或2,更佳為1。n的上限為L2 所表示的連結基可採用的取代基的最大數。若n為1,則藉由所述最高加熱溫度以下的加熱,而容易產生沸點高的三級胺。進而,可提升組成物的穩定性。R 1 represents a monovalent organic group. Examples of the monovalent organic group include an aliphatic group, an aryl group and the like. Examples of the aliphatic group and the aryl group include those described in the above A 1 . The monovalent organic group represented by R 1 may have a substituent. R 1 is preferably a group having a carboxyl group. That is, R 1 is preferably a group represented by the formula. -L 2 -(COOH) n In the formula, L 2 represents a (n+1)-valent linking group, and n represents an integer of 1 or more. The linking group represented by L 2 may be the group described in the above L 1 , and the preferred range is also the same, and particularly preferably an ethyl group or a methylene group, and most preferably a methylene group. n represents an integer of 1 or more, preferably 1 or 2, more preferably 1. The upper limit of n is the maximum number of substituents which can be used for the linking group represented by L 2 . When n is 1, the tertiary amine having a high boiling point is easily generated by heating at or below the maximum heating temperature. Further, the stability of the composition can be improved.

m表示1以上的整數,較佳為1或2,更佳為1。m的上限為L1 所表示的連結基可採用的取代基的最大數。若m為1,則藉由所述最高加熱溫度以下的加熱,而容易產生沸點高的三級胺。進而,可提升組成物的穩定性。 p表示1以上的整數,較佳為1或2,更佳為1。p的上限為A1 所表示的有機基可採用的取代基的最大數。若p為1,則藉由所述最高加熱溫度以下的加熱,而容易產生沸點高的三級胺。m represents an integer of 1 or more, preferably 1 or 2, more preferably 1. The upper limit of m is the maximum number of substituents which can be used for the linking group represented by L 1 . When m is 1, the tertiary amine having a high boiling point is easily generated by heating at or below the maximum heating temperature. Further, the stability of the composition can be improved. p represents an integer of 1 or more, preferably 1 or 2, more preferably 1. The upper limit of p is the maximum number of substituents which the organic group represented by A 1 can employ. When p is 1, the tertiary amine having a high boiling point is easily generated by heating at or below the maximum heating temperature.

於本發明中,由通式(1A)所表示的化合物較佳為由下述通式(1a)所表示的化合物。 通式(1a) [化32]通式(1a)中,A1 表示p價的有機基,L1 表示(m+1)價的連結基,L2 表示(n+1)價的連結基,m表示1以上的整數,n表示1以上的整數,p表示1以上的整數。 通式(1a)的A1 、L1 、L2 、m、n及p的含義與通式(1A)中所說明的範圍相同,較佳的範圍亦相同。In the present invention, the compound represented by the formula (1A) is preferably a compound represented by the following formula (1a). General formula (1a) [化32] In the formula (1a), A 1 represents a p-valent organic group, L 1 represents a (m+1)-valent linking group, L 2 represents a (n+1)-valent linking group, and m represents an integer of 1 or more, n An integer of 1 or more is represented, and p represents an integer of 1 or more. The meanings of A 1 , L 1 , L 2 , m, n and p of the formula (1a) are the same as those described in the formula (1A), and the preferred ranges are also the same.

於本發明中,由通式(1A)所表示的化合物較佳為N-芳基亞胺基二乙酸。N-芳基亞胺基二乙酸是通式(1A)中的A1 為芳基、L1 及L2 為亞甲基、m為1、n為1、p為1的化合物。N-芳基亞胺基二乙酸於120℃~200℃下,容易產生沸點高的三級胺。In the present invention, the compound represented by the formula (1A) is preferably N-aryliminodiacetic acid. The N-aryliminodiacetic acid is a compound in which the A 1 in the formula (1A) is an aryl group, L 1 and L 2 are a methylene group, m is 1, n is 1, and p is 1. N-aryliminodiacetic acid easily produces a tertiary amine having a high boiling point at 120 ° C to 200 ° C.

以下,記載本發明中的熱胺產生劑的具體例,但本發明並不限定於該些具體例。該些分別可單獨使用、或將兩種以上混合使用。以下的式中的Me表示甲基。以下所示的化合物中,(A-1)~(A-11)、(A-18)、(A-19)為由所述式(1)所表示的化合物。以下所示的化合物中,更佳為(A-1)~(A-11)、(A-18)~(A-26),進而更佳為(A-1)~(A-9)、(A-18)~(A-21)、(A-23)、(A-24)。 另外,就提升與銅的密接性的觀點而言,較佳為(A-18)~(A-26)、(A-38)~(A-43),更佳為(A-26)、(A-38)~(A-43)。Specific examples of the hot amine generating agent in the present invention are described below, but the present invention is not limited to these specific examples. These may be used alone or in combination of two or more. Me in the following formula represents a methyl group. Among the compounds shown below, (A-1) to (A-11), (A-18), and (A-19) are the compounds represented by the above formula (1). Among the compounds shown below, (A-1) to (A-11), (A-18) to (A-26), and more preferably (A-1) to (A-9), (A-18) to (A-21), (A-23), and (A-24). Moreover, from the viewpoint of improving the adhesion to copper, it is preferably (A-18) to (A-26), (A-38) to (A-43), and more preferably (A-26). (A-38) to (A-43).

[表1] [Table 1]

[表2] [表3] [表4] [表5] [Table 2] [table 3] [Table 4] [table 5]

<<光胺產生劑>> 光胺產生劑由於藉由曝光所產生的鹼作為藉由加熱而使含有雜環的聚合物前驅物硬化時的觸媒發揮作用,故於負型中可適宜地使用。<<Photoamine generator>> The photoamine generator is suitable for the negative type because the base generated by the exposure acts as a catalyst when the polymer precursor containing the hetero ring is cured by heating. use.

於本發明中,作為光胺產生劑,可使用公知者。例如可列舉:如M.白井與M.角岡(M. Shirai, and M. Tsunooka),「聚合物科學進展(Progress in Polymer Science,Prog. Polym. Sci.)」,21, 1(1996);角岡正弘,「高分子加工」,46, 2(1997);C. Kutal,「配位化學評論(Coordination Chemistry Reviews,Coord. Chem. Rev.)」,211, 353(2001);Y.金子與A.薩卡及D.乃克斯(Y. Kaneko, A. Sarker, and D. Neckers),「化學材料(Chemistry of Materials,Chem. Mater.)」,11, 170(1999);H.多知與M.白井及M.角岡(H. Tachi, M. Shirai, and M. Tsunooka),「光聚合物科學與技術期刊(Journal of  Photopolymer Science and Technology,J. Photopolym. Sci. Technol.)」,13, 153(2000);M.溫克爾與格雷齊亞諾(M. Winkle, and. Graziano),「光聚合物科學與技術期刊(J. Photopolym. Sci. Technol.)」, 3, 419(1990);M.角岡與H.多知與S.吉高(M. Tsunooka, H. Tachi, and S. Yoshitaka),「光聚合物科學與技術期刊(J. Photopolym. Sci. Technol.)」,9, 13(1996);K.須山與H.荒木及M.白井(K. Suyama, H. Araki, M. Shirai),「光聚合物科學與技術期刊(J. Photopolym. Sci. Technol.)」, 19, 81(2006)中所記載般,具有銨鹽等結構者、或者如藉由脒部分與羧酸形成鹽而進行潛在化者般藉由胺形成鹽而中和的離子性化合物,或胺甲酸酯衍生物、肟酯衍生物、醯基化合物等藉由胺基甲酸酯鍵或肟鍵等而鹼成分進行潛在化的非離子性化合物。In the present invention, as the photoamine generating agent, a known one can be used. For example, M. Shirai, and M. Tsunooka, Progress in Polymer Science, Prog. Polym. Sci., 21, 1 (1996) Kakuoka Masahiro, "Polymer Processing", 46, 2 (1997); C. Kutal, "Coordination Chemistry Reviews, Coord. Chem. Rev.", 211, 353 (2001); Y. Gold and A. Sarke, and D. Neckers, "Chemistry of Materials, Chem. Mater.", 11, 170 (1999); H .. and H. Tachi, M. Shirai, and M. Tsunooka, Journal of Photopolymer Science and Technology, J. Photopolym. Sci. Technol .)", 13, 153 (2000); M. Winkle, and Graziano, "J. Photopolym. Sci. Technol." 3, 419 (1990); M. Kakuoka and H. T. and M. Tsunooka, H. Tachi, and S. Yoshitaka, Journal of Photopolymer Science and Technology (J. Photopolym) Sci. Technol.)", 9, 13 (1996); K. Shoushan and H. Araki and M. Shirai, "Journal of Photopolymer Science and Technology (J) . Photopolym. Sci. Technol.)", 19, 81 (2006), which has a structure such as an ammonium salt or a salt formed by an amine such as a salt formed by a hydrazine moiety and a carboxylic acid. The neutralized ionic compound, or a urethane derivative, an oxime ester derivative, a mercapto compound or the like, is a nonionic compound which is latent by an alkali component such as a urethane bond or a hydrazone bond.

作為自光胺產生劑產生的胺,可列舉:單胺、或二胺等多胺、或者脒等。 所產生的胺較佳為二胺、脂肪族胺。其原因在於:此種胺對於含有雜環的聚合物前驅物的醯亞胺化、或噁唑化中的脫水縮合反應等的觸媒作用強,以更少的量添加,於更低的溫度下便能夠表現出脫水縮合反應等中的觸媒效果。即,由於所產生的胺的觸媒效果大,故作為組成物的表觀的感度得到提升。 作為本發明中的胺,例如可列舉:如日本專利特開2009-80452號公報及國際公開第2009/123122號公報中所揭示般的具有肉桂酸醯胺結構的鹼產生劑,如日本專利特開2006-189591號公報及日本專利特開2008-247747號公報中所揭示般的具有胺甲酸酯結構的鹼產生劑,如日本專利特開2007-249013號公報及日本專利特開2008-003581號公報中所揭示般的具有肟結構、胺甲醯基肟結構的胺等,但並不限定於該些,除此以外亦可使用公知的胺的結構。Examples of the amine produced from the photo-amine generating agent include a polyamine such as a monoamine or a diamine, or hydrazine. The amine produced is preferably a diamine or an aliphatic amine. The reason for this is that such an amine has a strong catalytic effect on ruthenium imidization of a heterocyclic-containing polymer precursor or a dehydration condensation reaction in oxazole, and is added in a smaller amount at a lower temperature. The catalyst effect in the dehydration condensation reaction or the like can be exhibited. That is, since the catalyst effect of the produced amine is large, the apparent sensitivity as a composition is improved. The amine in the present invention is, for example, a base generator having a guanyl cinnamate structure as disclosed in Japanese Laid-Open Patent Publication No. 2009-80452 and International Publication No. 2009/123122. An alkali-generating agent having a urethane structure as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2008-247747, and Japanese Patent Laid-Open No. Hei. No. 2007-249013, and Japanese Patent Laid-Open No. 2008-003581 The amine having an anthracene structure or an amine formamidine structure as disclosed in the publication is not limited thereto, and a known amine structure may be used.

以下,列舉具體例對本發明中可使用的光胺產生劑進行說明。 作為離子性化合物,例如可列舉下述結構式者。Hereinafter, the photoamine generating agent usable in the present invention will be described by way of specific examples. Examples of the ionic compound include those having the following structural formula.

[化33] [化33]

作為醯基化合物,例如可列舉下述式所示般的化合物。Examples of the mercapto compound include compounds represented by the following formulas.

[化34] [化34]

另外,作為光胺產生劑,例如可列舉下述通式(PB-1)所示的化合物。In addition, examples of the photoamine generating agent include compounds represented by the following formula (PB-1).

[化35](PB-1)[化35] (PB-1)

(式(PB-1)中,R41 及R42 分別獨立地為氫原子或有機基,可相同亦可不同;其中,R41 及R42 的至少一者為有機基;或者,關於R41 及R42 ,該些可鍵結而形成環結構,亦可包含雜原子的鍵;R43 及R44 分別獨立地為氫原子、鹵素原子、羥基、巰基、硫醚基、矽烷基、矽烷醇基、硝基、亞硝基、亞磺酸基、磺基、磺酸根基、膦基、氧膦基、膦醯基、膦酸根基、或有機基,可相同亦可不同;R45 、R46 、R47 及R48 分別獨立地為氫原子、鹵素原子、羥基、巰基、硫醚基、矽烷基、矽烷醇基、硝基、亞硝基、亞磺酸基、磺基、磺酸根基、膦基、氧膦基、膦醯基、膦酸根基、胺基、銨基或有機基,可相同亦可不同;或者,關於R45 、R46 、R47 及R48 ,該些的兩個以上可鍵結而形成環結構,亦可包含雜原子的鍵;R49 為氫原子、或能夠藉由加熱及/或電磁波的照射而脫保護的保護基)(In the formula (PB-1), R 41 and R 42 are each independently a hydrogen atom or an organic group, and may be the same or different; wherein at least one of R 41 and R 42 is an organic group; or, regarding R 41 And R 42 , which may be bonded to form a ring structure, and may also contain a bond of a hetero atom; R 43 and R 44 are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a thiol group, a thioether group, a decyl group, a decyl alcohol. a base, a nitro group, a nitroso group, a sulfinic acid group, a sulfo group, a sulfonate group, a phosphino group, a phosphinyl group, a phosphonium group, a phosphonate group, or an organic group, which may be the same or different; R 45 , R 46 , R 47 and R 48 are each independently a hydrogen atom, a halogen atom, a hydroxyl group, a thiol group, a thioether group, a decyl group, a decyl alcohol group, a nitro group, a nitroso group, a sulfinic acid group, a sulfo group, a sulfonate group. , phosphino, phosphinyl, phosphinyl, phosphonate, amine, ammonium or organic, may be the same or different; or, with respect to R 45 , R 46 , R 47 and R 48 , More than one may be bonded to form a ring structure, and may also contain a bond of a hetero atom; R 49 is a hydrogen atom or may be deprotected by irradiation with heat and/or electromagnetic waves Protection base)

以下列舉式(PB-1)的具體例,但並不限定於此。Specific examples of the formula (PB-1) are listed below, but are not limited thereto.

[化36] [化36]

[化37] [化37]

[化38] [化38]

除此以外,作為光胺產生劑,可列舉:日本專利特開2012-93746號公報的段落號0185~段落號0188、段落號0199~段落號0200及段落號0202中記載的化合物,日本專利特開2013-194205號公報的段落號0022~段落號0069中記載的化合物,日本專利特開2013-204019號公報的段落號0026~段落號0074中記載的化合物,以及國際公開WO2010/064631號公報的段落號0052中記載的化合物作為例子,將該些內容併入本說明書中。In addition, examples of the photoamine generating agent include the compounds described in Paragraph No. 0185 to Paragraph No. 0188, Paragraph No. 0199 to Paragraph No. 0200, and Paragraph No. 0202 of JP-A-2012-93746, Japanese Patent No. The compound described in paragraphs 0022 to 0069 of JP-A-2013-194205, the compound described in paragraph 0026 to paragraph 0074 of JP-A-2013-204019, and WO2010/064631 The compound described in Paragraph No. 0052 is taken as an example, and the contents are incorporated in the present specification.

當使用胺產生劑時,相對於組成物的總固體成分,組成物中的胺產生劑的含量較佳為0.1質量%~50質量%。下限更佳為0.5質量%以上,進而更佳為1質量%以上。上限更佳為30質量%以下,進而更佳為20質量%以下。 另外,相對於聚醯亞胺前驅物及聚苯并噁唑前驅物的合計量,較佳為以0.01質量%~45質量%的比例包含胺產生劑。胺產生劑的相對於聚醯亞胺前驅物及聚苯并噁唑前驅物的合計量的下限值更佳為0.2質量%以上,進而更佳為0.5質量%以上,尤佳為1.0質量%以上。上限值更佳為35.0質量%以下,進而更佳為28.0質量%以下,尤佳為12質量%以下,更尤佳為6.0質量%以下的比例。藉由設為所述範圍,更有效地發揮本發明的效果。尤其,藉由將胺產生劑的量設為6.0質量%以下,胺產生劑變得不易殘存於硬化膜中,且可進一步減低逸氣成分。另外,藉由將胺產生劑的量設為0.2質量%以上,可進一步促進硬化,且可減少逸氣成分。 胺產生劑可使用一種或兩種以上。當使用兩種以上時,較佳為合計量為所述範圍。When an amine generator is used, the content of the amine generator in the composition is preferably from 0.1% by mass to 50% by mass based on the total solid content of the composition. The lower limit is more preferably 0.5% by mass or more, and still more preferably 1% by mass or more. The upper limit is more preferably 30% by mass or less, and still more preferably 20% by mass or less. Further, the amine generator is preferably contained in a ratio of 0.01% by mass to 45% by mass based on the total amount of the polyimide intermediate and the polybenzoxazole precursor. The lower limit of the total amount of the amine generator relative to the polyimide intermediate and the polybenzoxazole precursor is more preferably 0.2% by mass or more, still more preferably 0.5% by mass or more, and particularly preferably 1.0% by mass. the above. The upper limit is more preferably 35.0% by mass or less, still more preferably 28.0% by mass or less, still more preferably 12% by mass or less, and still more preferably 6.0% by mass or less. By setting it as the said range, the effect of this invention is exerted more effectively. In particular, when the amount of the amine generator is 6.0% by mass or less, the amine generator becomes less likely to remain in the cured film, and the outgassing component can be further reduced. In addition, by setting the amount of the amine generator to 0.2% by mass or more, the hardening can be further promoted, and the outgassing component can be reduced. The amine generator may be used alone or in combination of two or more. When two or more types are used, it is preferred that the total amount is the above range.

本發明中使用的組成物除胺產生劑以外,亦可使用其他熱鹼產生劑,亦可不使用。本發明中的組成物亦可設為實質上不含其他熱鹼產生劑的構成。所謂實質上不含,例如是指組成物中所含的胺產生劑的量的0.1質量%以下。The composition used in the present invention may be used in addition to the amine generating agent, or may be used without using other thermal base generators. The composition in the present invention may be configured to be substantially free of other thermal base generating agents. The term "substantially free" means, for example, 0.1% by mass or less based on the amount of the amine generator contained in the composition.

本發明中使用的組成物較佳為不含共軛酸的pKa8以上的胺。此處,所謂組成物不含共軛酸的pKa8以上的胺,主旨在於除完全不含組成物中的共軛酸的pKa8以上的胺的情況以外,亦包含實質上不含的情況。所謂實質上,是指以不脫離本發明的主旨的範圍包含,例如,組成物中所含的胺產生劑的0.001質量%以下的情況、或檢測極限以下的情況當然可稱為實質上不含。 如此,藉由於使含有雜環的聚合物前驅物的環化反應開始前的組成物中不含共軛酸的pKa8以上的胺,可更容易地調整硬化膜的胺量。 進而,本發明中的組成物較佳為於加熱前實質上不含胺。所謂實質上,主旨在於亦包括以不脫離本發明的主旨的範圍包含的情況,例如,組成物中所含的胺產生劑的0.001質量%以下的情況當然可稱為實質上不含。The composition used in the present invention is preferably an amine having a pKa8 or more which does not contain a conjugate acid. Here, the composition does not contain an amine having a pKa8 or more of a conjugate acid, and the main purpose is to contain substantially no pKa8 or more amine of the conjugate acid in the composition. In the range of 0.001% by mass or less of the amine generator contained in the composition or the detection limit or less, it is of course not included in the range which does not deviate from the scope of the present invention. . As described above, since the composition before the start of the cyclization reaction of the heterocyclic-containing polymer precursor does not contain an amine having a pKa8 or more of a conjugate acid, the amount of the amine of the cured film can be more easily adjusted. Further, the composition of the present invention preferably contains substantially no amine before heating. In the case where the content of the amine generating agent contained in the composition is 0.001% by mass or less, it is of course not substantially excluded.

<組成物中所含的其他成分> 本發明中使用的組成物若包含含有雜環的聚合物前驅物與胺產生劑,則其他成分並無特別限定,可根據用途等適宜調配其他成分。本發明中使用的組成物特佳為感光性樹脂組成物,但未必為限定於具有感光性的用途者。 本發明中的感光性樹脂組成物的第一實施形態包含含有雜環的聚合物前驅物與光自由基聚合起始劑。此種感光性樹脂組成物可較佳地用作負型感光性樹脂組成物。當用作負型感光性樹脂組成物時,較佳為含有雜環的聚合物前驅物具有聚合性不飽和基、或包含交聯劑。當感光性樹脂組成物為負型感光性樹脂組成物時,作為交聯劑,較佳為包含具有乙烯性不飽和鍵的化合物。 本發明中的感光性樹脂組成物的第二實施形態包含含有雜環的聚合物前驅物與光酸產生劑。此種感光性樹脂組成物可較佳地用作正型感光性樹脂組成物。當用作正型感光性樹脂組成物時,較佳為包含硬化性組成物。當感光性樹脂組成物為正型感光性樹脂組成物時,作為交聯劑,較佳為選自具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物、環氧化合物、氧雜環丁烷化合物及苯并噁嗪化合物中的至少一種化合物。 進而,負型感光性樹脂組成物亦可包含增感劑、聚合抑制劑等。另外,當然亦可包含除該些以外的成分。 另一方面,正型感光性樹脂組成物亦可包含具有酚性OH基的樹脂。另外,當然亦可包含除該些以外的成分。 該些成分的詳細情況將於後敍述。 尤其,當為正型感光性樹脂組成物時,較佳為含有雜環的聚合物前驅物包含聚苯并噁唑前驅物。 另外,本發明中使用的組成物亦可包含閉環結構的聚醯亞胺或聚苯并噁唑等。<Other components contained in the composition> When the composition used in the present invention contains a polymer precursor containing a hetero ring and an amine generator, the other components are not particularly limited, and other components may be appropriately formulated depending on the use and the like. The composition used in the present invention is particularly preferably a photosensitive resin composition, but is not necessarily limited to those having photosensitivity. The first embodiment of the photosensitive resin composition of the present invention comprises a heterocyclic-containing polymer precursor and a photoradical polymerization initiator. Such a photosensitive resin composition can be preferably used as a negative photosensitive resin composition. When used as a negative photosensitive resin composition, it is preferred that the heterocyclic-containing polymer precursor has a polymerizable unsaturated group or a crosslinking agent. When the photosensitive resin composition is a negative photosensitive resin composition, the crosslinking agent preferably contains a compound having an ethylenically unsaturated bond. The second embodiment of the photosensitive resin composition of the present invention comprises a heterocyclic-containing polymer precursor and a photoacid generator. Such a photosensitive resin composition can be preferably used as a positive photosensitive resin composition. When used as a positive photosensitive resin composition, it is preferable to contain a curable composition. When the photosensitive resin composition is a positive photosensitive resin composition, the crosslinking agent is preferably selected from a compound having a hydroxymethyl group, an alkoxymethyl group or a decyloxymethyl group, an epoxy compound, and oxygen. At least one compound of a heterocyclic butane compound and a benzoxazine compound. Further, the negative photosensitive resin composition may contain a sensitizer, a polymerization inhibitor, or the like. In addition, it is of course possible to include components other than these. On the other hand, the positive photosensitive resin composition may also contain a resin having a phenolic OH group. In addition, it is of course possible to include components other than these. Details of these ingredients will be described later. In particular, when it is a positive photosensitive resin composition, it is preferable that the polymer precursor containing a hetero ring contains a polybenzoxazole precursor. Further, the composition used in the present invention may also contain a polycyclic imine or a polybenzoxazole or the like having a closed-loop structure.

相對於組成物的總固體成分,本發明中使用的組成物中的含有雜環的聚合物前驅物的含量較佳為20質量%~100質量%,更佳為50質量%~99質量%,進而更佳為70質量%~98質量%,特佳為80質量%~95質量%。 以下,對本發明中使用的組成物可含有的成分進行說明。當然本發明亦可包含除該些以外的成分,另外,該些成分並非為必需。The content of the heterocyclic-containing polymer precursor in the composition used in the present invention is preferably 20% by mass to 100% by mass, and more preferably 50% by mass to 99% by mass, based on the total solid content of the composition. Further, it is more preferably 70% by mass to 98% by mass, particularly preferably 80% by mass to 95% by mass. Hereinafter, components which can be contained in the composition used in the present invention will be described. Of course, the invention may also contain ingredients other than those which are not necessary.

<交聯劑> 可例示本發明中使用的組成物包含交聯劑作為較佳的實施形態。藉由包含交聯劑,可使含有雜環的聚合物前驅物於低溫下的環化反應更有效地進行。進而,藉由含有交聯劑,可形成耐熱性更優異的硬化膜。另外,亦可進行利用光微影的圖案形成。 當進行調配時,交聯劑的含量較佳為相對於組成物中的雜環聚合物前驅物的合計量為1質量%~40質量%,更佳為10質量%~30質量%。交聯劑可僅使用一種,亦可使用兩種以上。當使用兩種以上的交聯劑時,較佳為合計量成為所述範圍。<Crosslinking Agent> The composition used in the present invention may contain a crosslinking agent as a preferred embodiment. By including a crosslinking agent, the cyclization reaction of the heterocyclic-containing polymer precursor at a low temperature can be more efficiently carried out. Further, by containing a crosslinking agent, a cured film having more excellent heat resistance can be formed. In addition, pattern formation using photolithography can also be performed. When the compounding is carried out, the content of the crosslinking agent is preferably from 1% by mass to 40% by mass, and more preferably from 10% by mass to 30% by mass based on the total amount of the heterocyclic polymer precursor in the composition. The crosslinking agent may be used singly or in combination of two or more. When two or more kinds of crosslinking agents are used, it is preferred that the total amount is in the above range.

交聯劑為具有交聯性基的化合物,可使用可藉由自由基、酸、鹼等來進行交聯反應的公知的化合物。所謂交聯性基,是指可藉由光化射線、放射線、自由基、酸或鹼的作用來進行交聯反應的基,作為較佳例,可列舉:具有乙烯性不飽和鍵的基、羥基甲基、醯氧基甲基、烷氧基甲基、環氧基、氧雜環丁基、苯并噁唑基。作為本發明中使用的具有乙烯性不飽和鍵的化合物,更佳為包含兩個以上乙烯性不飽和基的化合物,進而更佳為包含2個~6個乙烯性不飽和基的化合物,特佳為包含2個~4個乙烯性不飽和基的化合物。 交聯劑例如可為單體、預聚物、寡聚物及該些的混合物以及該些的多聚體等化學形態的任一種。具有乙烯性不飽和鍵的化合物較佳為單體。The crosslinking agent is a compound having a crosslinkable group, and a known compound which can be subjected to a crosslinking reaction by a radical, an acid, an alkali or the like can be used. The crosslinkable group is a group which can be subjected to a crosslinking reaction by the action of actinic rays, radiation, a radical, an acid or a base, and a preferred example thereof is a group having an ethylenically unsaturated bond. Hydroxymethyl, decyloxymethyl, alkoxymethyl, epoxy, oxetanyl, benzoxazolyl. The compound having an ethylenically unsaturated bond used in the present invention is more preferably a compound containing two or more ethylenically unsaturated groups, and still more preferably a compound containing two to six ethylenically unsaturated groups. It is a compound containing 2 to 4 ethylenically unsaturated groups. The crosslinking agent may be, for example, any of a chemical form such as a monomer, a prepolymer, an oligomer, a mixture thereof, and a polymer of the above. The compound having an ethylenically unsaturated bond is preferably a monomer.

於本發明中,單體型的交聯劑(以下,亦稱為交聯性單體)是與高分子化合物不同的化合物。交聯性單體典型的是低分子化合物,較佳為分子量為2,000以下的低分子化合物,更佳為分子量為1,500以下的低分子化合物,進而更佳為分子量為900以下的低分子化合物。再者,交聯性單體的分子量通常為100以上。 另外,寡聚物型的交聯劑典型的是分子量比較低的聚合物,較佳為10個~100個交聯性單體鍵結而成的聚合物。作為分子量,重量平均分子量較佳為2,000~20,000,更佳為2,000~15,000,最佳為2,000~10,000。In the present invention, the monomer type crosslinking agent (hereinafter also referred to as a crosslinkable monomer) is a compound different from the polymer compound. The crosslinkable monomer is typically a low molecular compound, preferably a low molecular weight compound having a molecular weight of 2,000 or less, more preferably a low molecular weight compound having a molecular weight of 1,500 or less, and still more preferably a low molecular weight compound having a molecular weight of 900 or less. Further, the molecular weight of the crosslinkable monomer is usually 100 or more. Further, the oligomer-type crosslinking agent is typically a polymer having a relatively low molecular weight, and preferably a polymer in which 10 to 100 crosslinkable monomers are bonded. The molecular weight, the weight average molecular weight is preferably from 2,000 to 20,000, more preferably from 2,000 to 15,000, most preferably from 2,000 to 10,000.

於本發明中,交聯劑的官能基數是指一分子中的交聯性基的數量。 就解析性的觀點而言,交聯劑較佳為包含至少一種含有兩個以上的交聯性基的二官能以上的交聯劑,更佳為包含至少一種三官能以上的交聯劑。交聯性基的上限並無特別限定,例如為8個以下,較佳為6個以下。作為交聯性基,較佳為自由基聚合性基。即,作為本發明中的交聯劑,可例示具有兩個以上的自由基聚合性基的化合物。本發明中,尤佳為滿足含有雜環的聚合物前驅物具有自由基聚合性基、及包含具有自由基聚合性基的交聯劑中的任一者。 另外,就形成三維交聯結構而可提升耐熱性的方面而言,本發明中的交聯劑較佳為包含至少一種三官能以上的交聯劑。另外,亦可為二官能以下的交聯劑與三官能以上的交聯劑的混合物。In the present invention, the number of functional groups of the crosslinking agent means the number of crosslinking groups in one molecule. From the viewpoint of analytical properties, the crosslinking agent preferably contains at least one crosslinking agent having two or more crosslinking groups, and more preferably contains at least one crosslinking agent having at least one trifunctional or higher functional group. The upper limit of the crosslinkable group is not particularly limited, and is, for example, 8 or less, preferably 6 or less. The crosslinkable group is preferably a radical polymerizable group. In other words, as the crosslinking agent in the present invention, a compound having two or more radical polymerizable groups can be exemplified. In the present invention, it is particularly preferred that the polymer precursor containing a hetero ring has a radical polymerizable group and a crosslinking agent having a radical polymerizable group. Further, in terms of forming a three-dimensional crosslinked structure to improve heat resistance, the crosslinking agent in the present invention preferably contains at least one trifunctional or higher crosslinking agent. Further, it may be a mixture of a difunctional or lower crosslinking agent and a trifunctional or higher crosslinking agent.

<<具有乙烯性不飽和鍵的化合物>> 作為具有乙烯性不飽和鍵的基,較佳為苯乙烯基、乙烯基、(甲基)丙烯醯基及(甲基)烯丙基,更佳為(甲基)丙烯醯基。<<Compound having an ethylenically unsaturated bond>> As a group having an ethylenically unsaturated bond, a styryl group, a vinyl group, a (meth)acryl fluorenyl group, and a (meth)allyl group are preferable. It is a (meth) acrylonitrile group.

作為具有乙烯性不飽和鍵的化合物的具體例,可列舉不飽和羧酸(例如丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、順丁烯二酸等)及其酯類、醯胺類、以及該些的多聚體,較佳為不飽和羧酸與多元醇化合物的酯、及不飽和羧酸與多元胺化合物的醯胺類、以及該些的多聚體。另外,亦可適宜地使用具有羥基、胺基、巰基等親核性取代基的不飽和羧酸的酯或醯胺類、與單官能或多官能異氰酸酯類或環氧類的加成反應物,或者與單官能或多官能的羧酸的脫水縮合反應物等。另外,具有異氰酸酯基或環氧基等親電子性取代基的不飽和羧酸的酯或醯胺類與單官能或多官能的醇類、胺類、硫醇類的加成反應物,進而,具有鹵基或甲苯磺醯氧基等脫離性取代基的不飽和羧酸的酯或醯胺類與單官能或多官能的醇類、胺類、硫醇類的取代反應物亦適宜。另外,作為其他例,亦可使用替換成不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯基醚、烯丙基醚等的化合物群組來代替所述不飽和羧酸。Specific examples of the compound having an ethylenically unsaturated bond include unsaturated carboxylic acids (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) and esters thereof. The guanamines and the multimers thereof are preferably esters of an unsaturated carboxylic acid and a polyol compound, and guanamines of an unsaturated carboxylic acid and a polyamine compound, and a multimer of these. Further, an ester or an oxime of an unsaturated carboxylic acid having a nucleophilic substituent such as a hydroxyl group, an amine group or a fluorenyl group, or an addition reaction product with a monofunctional or polyfunctional isocyanate or an epoxy group may be suitably used. Or a dehydration condensation reaction with a monofunctional or polyfunctional carboxylic acid or the like. Further, an ester of an unsaturated carboxylic acid having an electrophilic substituent such as an isocyanate group or an epoxy group, or an addition reaction product of a monofunctional or polyfunctional alcohol, an amine or a thiol, A substituted reactant of an unsaturated carboxylic acid having a detachable substituent such as a halogen group or a tosyloxy group or a guanamine and a monofunctional or polyfunctional alcohol, an amine or a thiol is also suitable. Further, as another example, a group of compounds substituted with a vinylbenzene derivative such as unsaturated phosphonic acid or styrene, vinyl ether or allyl ether may be used instead of the unsaturated carboxylic acid.

作為多元醇化合物與不飽和羧酸的酯的單體的具體例,作為丙烯酸酯,有乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、1,3-丁二醇二丙烯酸酯、四亞甲基二醇二丙烯酸酯、丙二醇二丙烯酸酯、新戊二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三羥甲基乙烷三丙烯酸酯、己二醇二丙烯酸酯、1,4-環己二醇二丙烯酸酯、四乙二醇二丙烯酸酯、季戊四醇二丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇二丙烯酸酯、二季戊四醇六丙烯酸酯、季戊四醇四丙烯酸酯、山梨糖醇三丙烯酸酯、山梨糖醇四丙烯酸酯、山梨糖醇五丙烯酸酯、山梨糖醇六丙烯酸酯、三(丙烯醯氧基乙基)異三聚氰酸酯、異三聚氰酸環氧乙烷改質三丙烯酸酯、聚酯丙烯酸酯寡聚物等。Specific examples of the monomer of the ester of the polyol compound and the unsaturated carboxylic acid include ethylene glycol diacrylate, triethylene glycol diacrylate, 1,3-butylene glycol diacrylate, and the like as the acrylate. Methylene glycol diacrylate, propylene glycol diacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, trimethylolpropane tris(propylene oxypropyl) ether, trishydroxyl Ethylene triacrylate, hexanediol diacrylate, 1,4-cyclohexanediol diacrylate, tetraethylene glycol diacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, dipentaerythritol diacrylate, Dipentaerythritol hexaacrylate, pentaerythritol tetraacrylate, sorbitol triacrylate, sorbitol tetraacrylate, sorbitol pentaacrylate, sorbitol hexaacrylate, tris(propylene methoxyethyl) iso-tri Polycyanate, iso-cyanuric acid ethylene oxide modified triacrylate, polyester acrylate oligomer, and the like.

作為甲基丙烯酸酯,有四亞甲基二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、新戊二醇二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、三羥甲基乙烷三甲基丙烯酸酯、乙二醇二甲基丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、己二醇二甲基丙烯酸酯、季戊四醇二甲基丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇二甲基丙烯酸酯、二季戊四醇六甲基丙烯酸酯、山梨糖醇三甲基丙烯酸酯、山梨糖醇四甲基丙烯酸酯、雙[對(3-甲基丙烯醯氧基-2-羥基丙氧基)苯基]二甲基甲烷、雙-[對(甲基丙烯醯氧基乙氧基)苯基]二甲基甲烷等。Examples of the methacrylate include tetramethylene glycol dimethacrylate, triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, and trimethylolpropane trimethacrylate. Trimethylolethane trimethacrylate, ethylene glycol dimethacrylate, 1,3-butylene glycol dimethacrylate, hexanediol dimethacrylate, pentaerythritol dimethacrylate, Pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, double [ (3-Methylpropenyloxy-2-hydroxypropoxy)phenyl]dimethylmethane, bis-[p-(methacryloxyethoxy)phenyl]dimethylmethane, and the like.

作為衣康酸酯,有乙二醇二衣康酸酯、丙二醇二衣康酸酯、1,3-丁二醇二衣康酸酯、1,4-丁二醇二衣康酸酯、四亞甲基二醇二衣康酸酯、季戊四醇二衣康酸酯、山梨糖醇四衣康酸酯等。As itaconate, there are ethylene glycol diitaric acid ester, propylene glycol II itaconate, 1,3-butylene glycol isaconate, 1,4-butanediol diitaric acid ester, and four Methylene glycol diitaconate, pentaerythritol diitaconate, sorbitol tetraconate, and the like.

作為巴豆酸酯,有乙二醇二巴豆酸酯、四亞甲基二醇二巴豆酸酯、季戊四醇二巴豆酸酯、山梨糖醇四-二巴豆酸酯等。Examples of the crotonate include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitol tetra-dicrotonate.

作為異巴豆酸酯,有乙二醇二異巴豆酸酯、季戊四醇二異巴豆酸酯、山梨糖醇四異巴豆酸酯等。Examples of the isocrotonate include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate.

作為順丁烯二酸酯,有乙二醇二順丁烯二酸酯、三乙二醇二順丁烯二酸酯、季戊四醇二順丁烯二酸酯、山梨糖醇四順丁烯二酸酯等。As the maleic acid ester, there are ethylene glycol dimaleate, triethylene glycol dimaleate, pentaerythritol dimaleate, sorbitol tetramaleic acid. Ester and the like.

作為其他酯的例子,例如亦可適宜地使用日本專利特公昭46-27926號公報、日本專利特公昭51-47334號公報、日本專利特開昭57-196231號公報中記載的脂肪族醇系酯類,或日本專利特開昭59-5240號公報、日本專利特開昭59-5241號公報、日本專利特開平2-226149號公報中記載的具有芳香族系骨架的化合物,日本專利特開平1-165613號公報中記載的包含胺基的化合物等。As an example of the other ester, for example, an aliphatic alcohol ester described in Japanese Patent Publication No. Sho 46-27926, Japanese Patent Publication No. Sho 51-47334, and Japanese Patent Laid-Open Publication No. SHO 57-196231 A compound having an aromatic skeleton described in Japanese Patent Laid-Open No. Hei 59-5241, Japanese Patent Laid-Open Publication No. Hei No. Hei No. Hei. A compound containing an amine group described in JP-A-165613.

另外,作為多元胺化合物與不飽和羧酸的醯胺的單體的具體例,有亞甲基雙-丙烯醯胺、亞甲基雙-甲基丙烯醯胺、1,6-六亞甲基雙-丙烯醯胺、1,6-六亞甲基雙-甲基丙烯醯胺、二乙三胺三丙烯醯胺、伸二甲苯基雙丙烯醯胺、伸二甲苯基雙甲基丙烯醯胺等。Further, specific examples of the monomer of the polyamine compound and the decylamine of the unsaturated carboxylic acid include methylene bis-acrylamide, methylene bis-methyl acrylamide, and 1,6-hexamethylene group. Bis-acrylamide, 1,6-hexamethylenebis-methylpropenylamine, diethylenetriaminetripropenylamine, xylylenebisacrylamide, xylylene bismethacrylamide, and the like.

作為其他較佳的醯胺系單體的例子,可列舉日本專利特公昭54-21726號公報中記載的具有伸環己基結構的單體。As an example of another preferable amide-based monomer, a monomer having a cyclohexylene structure described in Japanese Patent Publication No. Sho 54-21726 can be cited.

另外,利用異氰酸酯與羥基的加成反應所製造的胺基甲酸酯系加成聚合性單體亦適宜,作為此種具體例,例如可列舉:日本專利特公昭48-41708號公報中所記載的於一分子中具有兩個以上的異氰酸酯基的聚異氰酸酯化合物中加成由下述通式所表示的包含羥基的乙烯基單體而成的一分子中包含兩個以上的聚合性乙烯基的乙烯基胺基甲酸酯化合物等。   CH2 =C(R4 )COOCH2 CH(R5 )OH   (其中,R4 及R5 表示H或CH3 ) 另外,如日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類,或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報中記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類亦適宜。In addition, a urethane-based addition polymerizable monomer produced by an addition reaction of an isocyanate and a hydroxyl group is also suitable, and as such a specific example, for example, it is described in JP-A-48-41708. In a polyisocyanate compound having two or more isocyanate groups in one molecule, a vinyl group containing a hydroxyl group represented by the following formula is added to contain one or more polymerizable vinyl groups in one molecule. A vinyl urethane compound or the like. CH 2 =C(R 4 )COOCH 2 CH(R 5 )OH (wherein R 4 and R 5 represent H or CH 3 ) Further, as disclosed in Japanese Patent Laid-Open No. 51-37193, Japanese Patent Special Publication No. 2 Japanese Patent Publication No. Sho 58-49860, Japanese Patent Publication No. SHO 58-49860, Japanese Patent Publication No. SHO 56-17654, and Japanese Patent Publication No. Sho 62-62 A urethane compound having an ethylene oxide skeleton described in Japanese Patent Publication No. Sho 62-39418 is also suitable.

另外,於本發明中,作為具有乙烯性不飽和鍵的化合物,亦可適宜地使用日本專利特開2009-288705號公報的段落號0095~段落號0108中所記載的化合物。Further, in the present invention, as the compound having an ethylenically unsaturated bond, the compound described in Paragraph No. 0095 to Paragraph No. 0108 of JP-A-2009-288705 can also be suitably used.

另外,作為具有乙烯性不飽和鍵的化合物,於常壓下具有100℃以上的沸點的化合物亦較佳。作為其例,可列舉:聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基乙酯等單官能的丙烯酸酯及甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成者,如日本專利特公昭48-41708號、日本專利特公昭50-6034號、日本專利特開昭51-37193號各公報中所記載的(甲基)丙烯酸胺基甲酸酯類,日本專利特開昭48-64183號公報、日本專利特公昭49-43191號公報、日本專利特公昭52-30490號各公報中所記載的聚酯丙烯酸酯類,作為環氧樹脂與(甲基)丙烯酸的反應產物的環氧丙烯酸酯類等多官能的丙烯酸酯及甲基丙烯酸酯以及該些的混合物。另外,日本專利特開2008-292970號公報的段落號0254~段落號0257中記載的化合物亦適宜。另外,亦可列舉使多官能羧酸與(甲基)丙烯酸縮水甘油酯等具有環狀醚基及乙烯性不飽和基的化合物進行反應而獲得的多官能(甲基)丙烯酸酯等。 另外,作為其他較佳的具有乙烯性不飽和鍵的化合物,亦可使用日本專利特開2010-160418號公報、日本專利特開2010-129825號公報、日本專利第4364216號公報等中所記載的具有茀環、且具有兩個以上的含有乙烯性不飽和鍵的基的化合物,或卡多(cardo)樹脂。 進而,作為其他例,亦可列舉日本專利特公昭46-43946號公報、日本專利特公平1-40337號公報、日本專利特公平1-40336號公報中記載的特定的不飽和化合物、或日本專利特開平2-25493號公報中記載的乙烯基膦酸系化合物等。另外,於某種情況下,適宜地使用日本專利特開昭61-22048號公報中記載的包含全氟烷基的結構。進而,亦可使用「日本接著協會誌」vol.20、No.7、300頁~308頁(1984年)中作為光交聯性單體及寡聚物所介紹者。Further, as the compound having an ethylenically unsaturated bond, a compound having a boiling point of 100 ° C or higher at normal pressure is also preferable. Examples thereof include monofunctional acrylates and methacrylates such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate. Polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol IV (Meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexane diol (meth) acrylate, trimethylolpropane tri (propylene oxypropyl propyl) (meth)acrylic acid after addition of ethylene oxide or propylene oxide to a polyfunctional alcohol, such as ether, tris(propylene methoxyethyl) isomeric cyanurate, glycerin or trimethylolethane The esterification of the (meth)acrylic acid urethanes as described in the Japanese Patent Publication No. Sho-48-41708, the Japanese Patent Publication No. Sho. Japanese Patent Publication No. Sho 48-64183, Japanese Patent Publication No. Sho 49-43191, Japanese Patent Publication No. Sho 52-30490 Polyester acrylates described in JP, as a reaction product of an epoxy resin and (meth) acrylic acid esters of polyfunctional epoxy acrylates acrylates and methacrylates, and mixtures of the plurality. Further, the compound described in Paragraph No. 0254 to Paragraph No. 0257 of JP-A-2008-292970 is also suitable. In addition, a polyfunctional (meth)acrylate obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group or an ethylenically unsaturated group such as glycidyl (meth)acrylate may be used. In addition, as another preferable compound having an ethylenic unsaturated bond, those described in JP-A-2010-160418, JP-A-2010-129825, and JP-A No. 4364216, etc., may be used. A compound having an anthracene ring and having two or more groups containing an ethylenically unsaturated bond, or a cardo resin. Further, as another example, a specific unsaturated compound described in Japanese Patent Publication No. Sho 46-43946, Japanese Patent Publication No. Hei. No. Hei. A vinylphosphonic acid-based compound or the like described in JP-A No. 2-25493. In addition, in some cases, a structure containing a perfluoroalkyl group described in JP-A-61-22048 is suitably used. Further, it is also possible to use as a photocrosslinkable monomer and oligomer in "Japan Next Association" Vol. 20, No. 7, 300 pages to 308 (1984).

除所述以外,亦可適宜地使用由下述通式(MO-1)~通式(MO-5)所表示的具有乙烯性不飽和鍵的化合物。再者,式中,當T為氧基伸烷基時,碳原子側的末端與R鍵結。In addition to the above, a compound having an ethylenically unsaturated bond represented by the following formula (MO-1) to formula (MO-5) can be suitably used. Further, in the formula, when T is an alkyloxy group, the terminal on the carbon atom side is bonded to R.

[化39] [39]

[化40] [化40]

通式中,n為0~14的整數,m為1~8的整數。一分子內存在多個的R、T分別可相同,亦可不同。 於由所述通式(MO-1)~通式(MO-5)所表示的聚合性化合物的各個中,多個R中的至少一個表示由-OC(=O)CH=CH2 、或-OC(=O)C(CH3 )=CH2 所表示的基。 於本發明中,作為由所述通式(MO-1)~通式(MO-5)所表示的具有乙烯性不飽和鍵的化合物的具體例,亦可適宜地使用日本專利特開2007-269779號公報的段落號0248~段落號0251中所記載的化合物。In the formula, n is an integer of 0 to 14, and m is an integer of 1 to 8. R and T in a single molecule may be the same or different. In each of the polymerizable compounds represented by the general formula (MO-1) to the general formula (MO-5), at least one of the plurality of R represents -OC(=O)CH=CH 2 , or -OC(=O)C(CH 3 )=the group represented by CH 2 . In the present invention, as a specific example of the compound having an ethylenically unsaturated bond represented by the above formula (MO-1) to (MO-5), Japanese Patent Laid-Open No. 2007- The compound described in Paragraph No. 0248 to Paragraph No. 0251 of 269779.

另外,於日本專利特開平10-62986號公報中作為通式(1)及通式(2)且與其具體例一同記載的如下化合物亦可用作聚合性化合物,該化合物是於多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成的化合物。The following compounds which are described in the general formula (1) and the general formula (2) together with the specific examples thereof can also be used as a polymerizable compound in a polyfunctional alcohol, as disclosed in Japanese Laid-Open Patent Publication No. Hei 10-62986. A compound obtained by (meth)acrylation after addition of ethylene oxide or propylene oxide.

作為具有乙烯性不飽和鍵的化合物,較佳為二季戊四醇三丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-330;日本化藥股份有限公司製造)、二季戊四醇四丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-320;日本化藥股份有限公司製造)、二季戊四醇五(甲基)丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-310;日本化藥股份有限公司製造)、二季戊四醇六(甲基)丙烯酸酯(市售品為卡亞拉得(KAYARAD)DPHA;日本化藥股份有限公司製造)、及該些的(甲基)丙烯醯基經由乙二醇殘基、丙二醇殘基而鍵結的結構。亦可使用該些的寡聚物型。As the compound having an ethylenically unsaturated bond, dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.) and dipentaerythritol tetraacrylate (preferably) The products sold are KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol penta (meth) acrylate (commercially available as KAYARAD D-310; Nippon Kayak) Pharmaceutical Co., Ltd.), dipentaerythritol hexa(meth) acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd.), and these (meth) acrylonitrile groups A structure bonded via an ethylene glycol residue or a propylene glycol residue. These oligomer types can also be used.

具有乙烯性不飽和鍵的化合物亦可為具有羧基、磺酸基、磷酸基等酸基的多官能單體。具有酸基的多官能單體較佳為脂肪族多羥基化合物與不飽和羧酸的酯,更佳為使脂肪族多羥基化合物的未反應的羥基與非芳香族羧酸酐進行反應而具有酸基的多官能單體,特佳為於該酯中,脂肪族多羥基化合物為季戊四醇及/或二季戊四醇者。作為市售品,例如可列舉作為東亞合成股份有限公司製造的多元酸改質丙烯酸寡聚物的M-510、M-520等。 具有酸基的多官能單體可單獨使用一種,亦可將兩種以上混合使用。另外,視需要,亦可併用不具有酸基的多官能單體與具有酸基的多官能單體。 具有酸基的多官能單體的較佳的酸價為0.1 mgKOH/g~40 mgKOH/g,特佳為5 mgKOH/g~30 mgKOH/g。若多官能單體的酸價為所述範圍,則製造或處理性優異,進而,顯影性優異。另外,交聯性良好。The compound having an ethylenically unsaturated bond may also be a polyfunctional monomer having an acid group such as a carboxyl group, a sulfonic acid group or a phosphoric acid group. The polyfunctional monomer having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, more preferably an acid group having an unreacted hydroxyl group of the aliphatic polyhydroxy compound reacted with a non-aromatic carboxylic anhydride. The polyfunctional monomer, particularly preferably in the ester, is an aliphatic polyhydroxy compound which is pentaerythritol and/or dipentaerythritol. As a commercial item, M-510, M-520, etc. which are polyacid-acid-modified acrylic oligomer manufactured by the East Asia Synthetic Co., Ltd. are mentioned, for example. The polyfunctional monomer having an acid group may be used singly or in combination of two or more. Further, a polyfunctional monomer having no acid group and a polyfunctional monomer having an acid group may be used in combination as needed. The preferred acid value of the polyfunctional monomer having an acid group is from 0.1 mgKOH/g to 40 mgKOH/g, particularly preferably from 5 mgKOH/g to 30 mgKOH/g. When the acid value of the polyfunctional monomer is in the above range, the production or handling property is excellent, and further, the developability is excellent. In addition, the crosslinkability is good.

具有乙烯性不飽和鍵的化合物亦可使用亦具有己內酯結構的化合物。 作為具有己內酯結構與乙烯性不飽和鍵的化合物,只要分子內具有己內酯結構,則並無特別限定,例如可列舉藉由將三羥甲基乙烷、二-三羥甲基乙烷、三羥甲基丙烷、二-三羥甲基丙烷、季戊四醇、二季戊四醇、三季戊四醇、甘油、二甘油、三羥甲基三聚氰胺等多元醇與(甲基)丙烯酸及ε-己內酯加以酯化而獲得的ε-己內酯改質多官能(甲基)丙烯酸酯。其中,較佳為由下述通式(C)所表示的具有己內酯結構的聚合性化合物。As the compound having an ethylenically unsaturated bond, a compound having a caprolactone structure can also be used. The compound having a caprolactone structure and an ethylenically unsaturated bond is not particularly limited as long as it has a caprolactone structure in the molecule, and examples thereof include trishydroxymethylethane and di-trimethylol B. Polyols such as alkane, trimethylolpropane, di-trimethylolpropane, pentaerythritol, dipentaerythritol, tripentaerythritol, glycerin, diglycerin, trimethylol melamine, and (meth)acrylic acid and ε-caprolactone The ε-caprolactone obtained by esterification is modified with a polyfunctional (meth) acrylate. Among them, a polymerizable compound having a caprolactone structure represented by the following formula (C) is preferred.

通式(C) [化41] General formula (C) [41]

(式中,6個R均為由下述通式(D)所表示的基、或者6個R中的1個~5個為由下述通式(D)所表示的基,剩餘為由下述通式(E)所表示的基)(In the formula, all of the six R's are represented by the following formula (D), or one to five of the six R's are represented by the following formula (D), and the remainder is a group represented by the following general formula (E)

通式(D) [化42] General formula (D) [Chem. 42]

(式中,R1 表示氫原子或甲基,m表示1或2,「*」表示結合鍵)(wherein R 1 represents a hydrogen atom or a methyl group, m represents 1 or 2, and "*" represents a bond)

通式(E) [化43] General formula (E) [化43]

(式中,R1 表示氫原子或甲基,「*」表示結合鍵)(wherein R 1 represents a hydrogen atom or a methyl group, and "*" represents a bond)

此種具有己內酯結構的聚合性化合物例如作為卡亞拉得(KAYARAD)DPCA系列而由日本化藥(股份)市售,可列舉:DPCA-20(所述通式(C)~通式(E)中,m=1,由通式(D)所表示的基的數量=2,R1 均為氫原子的化合物)、DPCA-30(所述通式(C)~通式(E)中,m=1,由通式(D)所表示的基的數量=3,R1 均為氫原子的化合物)、DPCA-60(所述通式(C)~通式(E)中,m=1,由通式(D)所表示的基的數量=6,R1 均為氫原子的化合物)、DPCA-120(所述通式(C)~通式(E)中,m=2,由通式(D)所表示的基的數量=6,R1 均為氫原子的化合物)等。 於本發明中,具有己內酯結構與乙烯性不飽和鍵的化合物可單獨使用、或將兩種以上混合使用。Such a polymerizable compound having a caprolactone structure is commercially available, for example, as a KAYARAD DPCA series from Nippon Kayaku Co., Ltd., and may be exemplified by DPCA-20 (the above formula (C) to the formula In (E), m = 1, a compound represented by the formula (D) = 2, a compound in which R 1 is a hydrogen atom), DPCA-30 (the above formula (C) to a formula (E) In the formula (C) to (E), m = 1, a compound represented by the formula (D) = 3, a compound in which R 1 is a hydrogen atom), and DPCA-60 (in the formula (C) to (E) , m = 1, a compound represented by the formula (D) = 6 and a compound in which R 1 is a hydrogen atom), DPCA-120 (in the above formula (C) to (E), m = 2, the number of the groups represented by the formula (D) = 6, the compound in which R 1 is a hydrogen atom) and the like. In the present invention, the compound having a caprolactone structure and an ethylenically unsaturated bond may be used singly or in combination of two or more.

具有乙烯性不飽和鍵的化合物為選自由下述通式(i)或通式(ii)所表示的化合物的群組中的至少一種亦較佳。The compound having an ethylenically unsaturated bond is preferably at least one selected from the group consisting of compounds represented by the following formula (i) or formula (ii).

[化44] [化44]

通式(i)及通式(ii)中,E分別獨立地表示-((CH2 )y CH2 O)-、或-((CH2 )y CH(CH3 )O)-,y分別獨立地表示0~10的整數,X分別獨立地表示(甲基)丙烯醯基、氫原子、或羧基。 通式(i)中,(甲基)丙烯醯基的合計為3個或4個,m分別獨立地表示0~10的整數,各m的合計為0~40的整數。其中,當各m的合計為0時,X中的任一個為羧基。 通式(ii)中,(甲基)丙烯醯基的合計為5個或6個,n分別獨立地表示0~10的整數,各n的合計為0~60的整數。其中,當各n的合計為0時,X中的任一個為羧基。In the general formula (i) and the general formula (ii), E independently represents -((CH 2 ) y CH 2 O)-, or -((CH 2 ) y CH(CH 3 )O)-, y respectively Independently, an integer of 0 to 10 is represented, and X each independently represents a (meth)acryloyl group, a hydrogen atom, or a carboxyl group. In the general formula (i), the total of (meth)acrylonyl groups is three or four, and m each independently represents an integer of from 0 to 10, and the total of each m is an integer of from 0 to 40. However, when the total of each m is 0, any one of X is a carboxyl group. In the general formula (ii), the total of (meth)acrylonyl groups is 5 or 6, and n each independently represents an integer of 0 to 10, and the total of each n is an integer of 0 to 60. However, when the total of each n is 0, any one of X is a carboxyl group.

通式(i)中,m較佳為0~6的整數,更佳為0~4的整數。 另外,各m的合計較佳為2~40的整數,更佳為2~16的整數,特佳為4~8的整數。 通式(ii)中,n較佳為0~6的整數,更佳為0~4的整數。 另外,各n的合計較佳為3~60的整數,更佳為3~24的整數,特佳為6~12的整數。 通式(i)或通式(ii)中的-((CH2 )y CH2 O)-或-((CH2 )y CH(CH3 )O)-較佳為氧原子側的末端鍵結於X上的形態。尤其,較佳為於通式(ii)中,6個X均為丙烯醯基的形態。In the formula (i), m is preferably an integer of 0 to 6, more preferably an integer of 0 to 4. Further, the total of each m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and particularly preferably an integer of 4 to 8. In the formula (ii), n is preferably an integer of 0 to 6, more preferably an integer of 0 to 4. Further, the total of each n is preferably an integer of from 3 to 60, more preferably an integer of from 3 to 24, and particularly preferably an integer of from 6 to 12. -((CH 2 ) y CH 2 O)- or -((CH 2 ) y CH(CH 3 )O)- in the formula (i) or the formula (ii) is preferably a terminal bond on the oxygen atom side Formed on X. In particular, it is preferred that in the general formula (ii), six Xs are in the form of an acrylonitrile group.

由通式(i)或通式(ii)所表示的化合物可由作為先前公知的步驟的如下步驟來合成:藉由使季戊四醇或二季戊四醇與環氧乙烷或環氧丙烷進行開環加成反應來使開環骨架鍵結的步驟、及使例如(甲基)丙烯醯氯與開環骨架的末端羥基進行反應來導入(甲基)丙烯醯基的步驟。各步驟是廣為人知的步驟,本領域從業人員可容易地合成由通式(i)或通式(ii)所表示的化合物。The compound represented by the general formula (i) or the general formula (ii) can be synthesized by the following steps as a previously known step: ring-opening addition reaction of pentaerythritol or dipentaerythritol with ethylene oxide or propylene oxide The step of bonding the ring-opening skeleton and the step of introducing a (meth)acrylonitrile group by reacting, for example, (meth)acrylofluorene chloride with a terminal hydroxyl group of the ring-opening skeleton. Each step is a well-known step, and a person represented by the formula (i) or the formula (ii) can be easily synthesized by a person skilled in the art.

由通式(i)及通式(ii)所表示的化合物中,更佳為季戊四醇衍生物及二季戊四醇衍生物。 具體而言,可列舉由下述式(a)~式(f)所表示的化合物(以下,亦稱為「例示化合物(a)~例示化合物(f)」),其中,較佳為例示化合物(a)、例示化合物(b)、例示化合物(e)、例示化合物(f)。Among the compounds represented by the general formula (i) and the general formula (ii), a pentaerythritol derivative and a dipentaerythritol derivative are more preferable. Specifically, a compound represented by the following formula (a) to formula (f) (hereinafter also referred to as "exemplary compound (a) to exemplary compound (f)")), preferably an exemplified compound (a), exemplified compound (b), exemplified compound (e), and exemplified compound (f).

[化45] [化45]

[化46] [Chem. 46]

作為由通式(i)及通式(ii)所表示的聚合性化合物的市售品,例如可列舉:沙多瑪(Sartomer)公司製造的作為具有4個伸乙氧基鏈的四官能丙烯酸酯的SR-494、日本化藥股份有限公司製造的作為具有6個伸戊氧基鏈的六官能丙烯酸酯的DPCA-60、作為具有3個伸異丁氧基鏈的三官能丙烯酸酯的TPA-330等。As a commercial item of the polymerizable compound represented by the general formula (i) and the general formula (ii), for example, a tetrafunctional acrylic acid having four ethylene ethoxylate chains manufactured by Sartomer Co., Ltd. is mentioned. Ester SR-494, DPCA-60 manufactured by Nippon Kayaku Co., Ltd. as a hexafunctional acrylate having 6 pentyloxy chains, and TPA as a trifunctional acrylate having 3 extended isobutoxy chains -330 and so on.

作為具有乙烯性不飽和鍵的化合物,如日本專利特公昭48-41708號、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類,或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報中記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類亦適宜。進而,作為聚合性化合物,亦可使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫醚基結構的加成聚合性單體類。 作為具有乙烯性不飽和鍵的化合物的市售品,可列舉:胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策紙漿(Sanyo Kokusaku Pulp)公司製造),NK酯(NK ESTER)M-40G、NK酯(NK ESTER)4G、NK酯(NK ESTER)M-9300、NK酯(NK ESTER)A-9300、UA-7200(新中村化學工業(股份)製造),DPHA-40H(日本化藥製造),UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮社化學(股份)製造),布蘭莫(Blemmer)PME400(日油(股份)製造)等。As a compound having an ethylenic unsaturated bond, for example, Japanese Patent Publication No. Sho 48-41708, Japanese Patent Laid-Open No. Sho 51-37193, Japanese Patent Laid-Open No. 2-32293, Japanese Patent Publication No. Hei 2-16765 The urethane amides described in Japanese Patent Publication No. Sho 58-49860, Japanese Patent Publication No. SHO 56-17654, Japanese Patent Publication No. Sho 62-39417, and Japanese Patent Publication No. SHO 62-39418 A urethane compound having an ethylene oxide skeleton described in the publication is also suitable. Further, as the polymerizable compound, an amine group having a molecule as described in JP-A-63-277653, JP-A-63-260909, and JP-A-10-15238 can be used. An addition polymerizable monomer of a structure or a thioether structure. Commercial products of the compound having an ethylenically unsaturated bond include urethane oligomer UAS-10, UAB-140 (made by Sanyo Kokusaku Pulp Co., Ltd.), and NK ESTER (NK ESTER). ) M-40G, NK Ester 4G, NK ESTER M-9300, NK ESTER A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.), DPHA-40H (Made in Japan), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), Blemmer PME400 (Day Oil (shares) manufacturing, etc.

就耐熱性的觀點而言,具有乙烯性不飽和鍵的化合物較佳為具有由下述式所表示的部分結構。其中,式中的*為連結鍵。From the viewpoint of heat resistance, the compound having an ethylenically unsaturated bond preferably has a partial structure represented by the following formula. Where * in the formula is a link key.

[化47] [化47]

作為具有所述部分結構的具有乙烯性不飽和鍵的化合物的具體例,例如可列舉三羥甲基丙烷三(甲基)丙烯酸酯、異三聚氰酸環氧乙烷改質二(甲基)丙烯酸酯、異三聚氰酸環氧乙烷改質三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等,本發明中可特佳地使用該些聚合性化合物。 另外,亦可列舉下述組成物中n為3~25的化合物作為較佳例。 [化48] Specific examples of the compound having an ethylenically unsaturated bond having the partial structure include, for example, trimethylolpropane tri(meth)acrylate and isomeric cyanuric acid ethylene oxide modified di(methyl). Acrylate, iso-cyanuric acid ethylene oxide modified tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dimethylolpropane tetra(methyl) ) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylol methane tetra (meth) acrylate, etc., which are particularly preferably used in the present invention Compound. Further, a compound having n of 3 to 25 in the following composition may be mentioned as a preferred example. [48]

於組成物中,就良好的交聯性與耐熱性的觀點而言,相對於組成物的總固體成分,具有乙烯性不飽和鍵的化合物的含量較佳為1質量%~50質量%。下限更佳為5質量%以上。上限更佳為30質量%以下,進而更佳為25質量%以下。具有乙烯性不飽和鍵的化合物可單獨使用一種,亦可將兩種以上混合使用。 另外,含有雜環的聚合物前驅物與具有乙烯性不飽和鍵的化合物的質量比例(含有雜環的聚合物前驅物/聚合性化合物)較佳為98/2~10/90,更佳為95/5~30/70,進而佳為90/10~50/50,進而更佳為90/10~70/30。若含有雜環的聚合物前驅物與具有乙烯性不飽和鍵的化合物的質量比例為所述範圍,則可形成交聯性及耐熱性更優異的硬化膜。 具有乙烯性不飽和鍵的化合物可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。In the composition, the content of the compound having an ethylenically unsaturated bond is preferably from 1% by mass to 50% by mass based on the total solid content of the composition from the viewpoint of good crosslinkability and heat resistance. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 30% by mass or less, and still more preferably 25% by mass or less. The compound having an ethylenically unsaturated bond may be used singly or in combination of two or more. Further, the mass ratio of the heterocyclic-containing polymer precursor to the compound having an ethylenically unsaturated bond (the heterocyclic-containing polymer precursor/polymerizable compound) is preferably 98/2 to 10/90, more preferably 95/5 to 30/70, and further preferably 90/10 to 50/50, and more preferably 90/10 to 70/30. When the mass ratio of the polymer precursor containing a hetero ring and the compound having an ethylenically unsaturated bond is in the above range, a cured film having more excellent crosslinkability and heat resistance can be formed. The compound having an ethylenically unsaturated bond may be used alone or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物> 作為具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物,較佳為由下述通式(AM1)所表示的化合物。<Compound having a hydroxymethyl group, an alkoxymethyl group or a decyloxymethyl group> As the compound having a hydroxymethyl group, an alkoxymethyl group or a decyloxymethyl group, it is preferred to have the following formula (AM1) ) the compound represented.

[化49](AM1)   (式中,t表示1~20的整數,R4 表示碳數1~200的t價的有機基,R5 表示由下述通式(AM2)或下述通式(AM3)所表示的基)[化49] (AM1) (wherein t represents an integer of 1 to 20, R 4 represents a t-valent organic group having 1 to 200 carbon atoms, and R 5 represents a general formula (AM2) or a formula (AM3) Base of representation)

[化50](AM2)(AM3)   (式中,R6 表示羥基或碳數1~10的有機基)[化50] (AM2) (AM3) (wherein R 6 represents a hydroxyl group or an organic group having 1 to 10 carbon atoms)

相對於含有雜環的聚合物前驅物100質量份,由通式(AM1)所表示的化合物的含量較佳為5質量份以上、40質量以下。更佳為10質量份以上、35質量份以下。另外,亦較佳為於所有交聯劑中,含有10質量%以上、90質量%以下的由下述通式(AM4)所表示的化合物,且於所有交聯劑中含有10質量%以上、90質量%以下的由下述通式(AM5)所表示的化合物。 該些化合物可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the compound represented by the formula (AM1) is preferably 5 parts by mass or more and 40 parts by mass or less based on 100 parts by mass of the polymer precursor containing a hetero ring. More preferably, it is 10 mass parts or more and 35 mass parts or less. In addition, it is preferable that the compound represented by the following formula (AM4) is contained in an amount of 10% by mass or more and 90% by mass or less, and all of the crosslinking agents are contained in an amount of 10% by mass or more. 90% by mass or less of a compound represented by the following formula (AM5). These compounds may be used alone or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

[化51](AM4)   (式中,R4 表示碳數1~200的二價的有機基,R5 表示由下述通式(AM2)或下述通式(AM3)所表示的基)[化51] (AM4) (wherein R 4 represents a divalent organic group having 1 to 200 carbon atoms, and R 5 represents a group represented by the following formula (AM2) or the following formula (AM3))

[化52](AM5)   (式中,u表示3~8的整數,R4 表示碳數1~200的u價的有機基,R5 表示由下述通式(AM2)或下述通式(AM3)所表示的基)[化52] (AM5) (wherein, u represents an integer of 3 to 8, and R 4 represents a u-valent organic group having a carbon number of 1 to 200, and R 5 represents a general formula (AM2) or the following general formula (AM3) Base of representation)

[化53](AM2)(AM3)   (式中,R6 表示羥基或碳數1~10的有機基)[化53] (AM2) (AM3) (wherein R 6 represents a hydroxyl group or an organic group having 1 to 10 carbon atoms)

於所述中,可例示以下化合物作為具有兩個以上羥基甲基的化合物。 [化54](化學式(1)中,Ra 為碳數2~20的有機基,P1 為氫原子或烷基) Ra 較佳為烴基。P1 較佳為氫原子。 該些的詳細情況可參考國際公開WO2010/038742號公報的段落號0010~段落號0024的記載,將該些內容併入本說明書中。Among the above, the following compounds can be exemplified as the compound having two or more hydroxymethyl groups. [54] (In the chemical formula (1), R a is an organic group having 2 to 20 carbon atoms, and P 1 is a hydrogen atom or an alkyl group.) R a is preferably a hydrocarbon group. P 1 is preferably a hydrogen atom. For details of these, refer to the description of Paragraph No. 0010 to Paragraph No. 0024 of International Publication WO2010/038742, the contents of which are hereby incorporated herein.

藉由使用所述化合物,當於具有凹凸的基板上形成組成物層時,產生裂紋的情況變得更少。進而,圖案加工性優異,且可具有5%質量減少溫度較佳為350℃以上、更佳為380℃以上的高耐熱性。作為由通式(AM4)所表示的化合物的具體例,可列舉:46DMOC、46DMOEP(以上為商品名,旭有機材工業(股份)製造)、DML-MBPC、DML-MBOC、DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、dimethylolBisOC-P、DML-PFP、DML-PSBP、DML-MTrisPC(以上為商品名,本州化學工業(股份)製造)、尼卡拉克(NIKALAC)MX-290(以上為商品名,三和化學(股份)製造)、2,6-二甲氧基甲基-4-第三丁基苯酚、2,6-二甲氧基甲基-對甲酚、2,6-二乙醯氧基甲基-對甲酚等。By using the compound, when a composition layer is formed on a substrate having irregularities, the occurrence of cracks becomes less. Further, the pattern processability is excellent, and the heat resistance of 5% by mass is preferably 350 ° C or higher, more preferably 380 ° C or higher. Specific examples of the compound represented by the formula (AM4) include 46DMOC, 46DMOEP (the above is a trade name, manufactured by Asahi Organic Materials Co., Ltd.), DML-MBPC, DML-MBOC, DML-OCHP, DML. -PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylolBisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC (above trade name, Honshu Chemical Industry Co., Ltd.) Manufactured), NIKALAC MX-290 (above trade name, manufactured by Sanwa Chemical Co., Ltd.), 2,6-dimethoxymethyl-4-tert-butylphenol, 2,6- Dimethoxymethyl-p-cresol, 2,6-diethyloxymethyl-p-cresol, and the like.

另外,作為由通式(AM5)所表示的化合物的具體例,可列舉:TriML-P、TriML-35XL、TML-HQ、TML-BP、TML-pp-BPF、TML-BPA、TMOM-BP、HML-TPPHBA、HML-TPHAP、HMOM-TPPHBA、HMOM-TPHAP(商品名,本州化學工業(股份)製造)、TM-BIP-A(商品名,旭有機材工業(股份)製造)、尼卡拉克(NIKALAC)MX-280、尼卡拉克(NIKALAC)MX-270、尼卡拉克(NIKALAC)MW-100LM(以上為商品名,三和化學(股份)製造)。Further, specific examples of the compound represented by the general formula (AM5) include TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPA, TMOM-BP, and the like. HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), TM-BIP-A (trade name, manufactured by Asahi Organic Materials Co., Ltd.), Nicarak (NIKALAC) MX-280, NIKALAC MX-270, NIKALAC MW-100LM (above, trade name, manufactured by Sanwa Chemical Co., Ltd.).

另外,作為具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物,以下化合物亦較佳。作為市售品,可例示T2058、B1525(以上為商品名,東京化成工業製造)。 [化55] Further, as the compound having a hydroxymethyl group, an alkoxymethyl group or a decyloxymethyl group, the following compounds are also preferred. T2058 and B1525 (above, the product name, manufactured by Tokyo Chemical Industry Co., Ltd.) can be exemplified as a commercial product. [化55]

<環氧化合物(具有環氧基的化合物)> 作為環氧化合物,較佳為於一分子中具有兩個以上環氧基的化合物。環氧化合物於200℃以下進行交聯反應,且於交聯反應中不會引起脫水反應,故難以引起膜收縮。因此,對組成物的低溫硬化及低翹曲化而言,有效的是含有環氧化合物。<Epoxy compound (compound having an epoxy group)> As the epoxy compound, a compound having two or more epoxy groups in one molecule is preferable. The epoxy compound undergoes a crosslinking reaction at 200 ° C or lower, and does not cause a dehydration reaction in the crosslinking reaction, so that it is difficult to cause film shrinkage. Therefore, it is effective to contain an epoxy compound for low-temperature hardening and low warpage of the composition.

環氧化合物較佳為含有聚環氧乙烷基。藉此,可進一步降低彈性模數,且進一步實現低翹曲化。另外,可獲得因柔軟性高而伸長率等亦優異的硬化膜。聚環氧乙烷基是指環氧乙烷的重複單元數量為2以上者,且較佳為重複單元數量為2~15。The epoxy compound preferably contains a polyethylene oxide group. Thereby, the elastic modulus can be further reduced, and the low warpage can be further achieved. Further, a cured film which is excellent in flexibility and high in elongation and the like can be obtained. The polyethylene oxide group means that the number of repeating units of ethylene oxide is 2 or more, and preferably the number of repeating units is 2 to 15.

作為環氧化合物的例子,可列舉:雙酚A型環氧樹脂;雙酚F型環氧樹脂;丙二醇二縮水甘油基醚等烷二醇型環氧樹脂;聚丙二醇二縮水甘油基醚等聚烷二醇型環氧樹脂;聚甲基(縮水甘油氧基丙基)矽氧烷等含有環氧基的矽酮等,但並不限定於該些例子。具體而言,可列舉:艾比克隆(Epiclon)(註冊商標)850-S、艾比克隆(Epiclon)(註冊商標)HP-4032、艾比克隆(Epiclon)(註冊商標)HP-7200、艾比克隆(Epiclon)(註冊商標)HP-820、艾比克隆(Epiclon)(註冊商標)HP-4700、艾比克隆(Epiclon)(註冊商標)EXA-4710、艾比克隆(Epiclon)(註冊商標)HP-4770、艾比克隆(Epiclon)(註冊商標)EXA-859CRP、艾比克隆(Epiclon)(註冊商標)EXA-1514、艾比克隆(Epiclon)(註冊商標)EXA-4880、艾比克隆(Epiclon)(註冊商標)EXA-4850-150、艾比克隆(Epiclon)(註冊商標)EXA-4850-1000、艾比克隆(Epiclon)(註冊商標)EXA-4816、艾比克隆(Epiclon)(註冊商標)EXA-4822(以上為商品名,大日本油墨化學工業(股份)製造)、理化樹脂(註冊商標)BEO-60E(以上為商品名,新日本理化股份有限公司),EP-4003S、EP-4000S(以上為商品名,艾迪科(ADEKA)(股份))等。其中,就低翹曲及耐熱性優異的方面而言,較佳為含有聚環氧乙烷基的環氧樹脂。例如,艾比克隆(Epiclon)(註冊商標)EXA-4880、艾比克隆(Epiclon)(註冊商標)EXA-4822、理化樹脂(註冊商標)BEO-60E因含有聚環氧乙烷基而較佳。Examples of the epoxy compound include a bisphenol A type epoxy resin; a bisphenol F type epoxy resin; an alkanediol type epoxy resin such as propylene glycol diglycidyl ether; and a polypropylene glycol diglycidyl ether. An alkanediol type epoxy resin; an epoxy group-containing anthrone or the like such as polymethyl (glycidoxypropyl) decane, but is not limited to these examples. Specifically, Epiclon (registered trademark) 850-S, Epiclon (registered trademark) HP-4032, Epiclon (registered trademark) HP-7200, Ai Epiclon (registered trademark) HP-820, Epiclon (registered trademark) HP-4700, Epiclon (registered trademark) EXA-4710, Epiclon (registered trademark) HP-4770, Epiclon (registered trademark) EXA-859CRP, Epiclon (registered trademark) EXA-1514, Epiclon (registered trademark) EXA-4880, Abby clone (Epiclon) (registered trademark) EXA-4850-150, Epiclon (registered trademark) EXA-4850-1000, Epiclon (registered trademark) EXA-4816, Epiclon (Epiclon) Registered trademark) EXA-4822 (above is the trade name, manufactured by Dainippon Ink Chemical Industry Co., Ltd.), Physicochemical Resin (registered trademark) BEO-60E (above, trade name, New Japan Physical and Chemical Co., Ltd.), EP-4003S, EP-4000S (above is the trade name, ADEKA (shares) and so on. Among them, in terms of low warpage and excellent heat resistance, an epoxy resin containing a polyethylene oxide group is preferred. For example, Epiclon (registered trademark) EXA-4880, Epiclon (registered trademark) EXA-4822, and physicochemical resin (registered trademark) BEO-60E are preferred because they contain a polyethylene oxide group. .

相對於含有雜環的聚合物前驅物100質量份,環氧化合物的含量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。若調配量為5質量份以上,則可進一步抑制硬化膜的翹曲,若為50質量份以下,則可進一步抑制伴隨最終加熱(固化)時的回流的圖案掩埋。 環氧化合物可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the epoxy compound is preferably from 5 parts by mass to 50 parts by mass, more preferably from 10 parts by mass to 50 parts by mass, even more preferably from 10 parts by mass to 40 parts by mass per 100 parts by mass of the polymer precursor containing a hetero ring. Parts by mass. When the amount is 5 parts by mass or more, the warpage of the cured film can be further suppressed. When the amount is 50 parts by mass or less, pattern burying accompanying the reflow at the time of final heating (curing) can be further suppressed. The epoxy compound may be used alone or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<氧雜環丁烷化合物(具有氧雜環丁基的化合物)> 作為氧雜環丁烷化合物,可列舉:於一分子中具有兩個以上氧雜環丁烷環的化合物、3-乙基-3-羥基甲基氧雜環丁烷、1,4-雙{[(3-乙基-3-氧雜環丁基)甲氧基]甲基}苯、3-乙基-3-(2-乙基己基甲基)氧雜環丁烷、1,4-苯二羧酸-雙[(3-乙基-3-氧雜環丁基)甲基]酯等。作為具體的例子,可適宜地使用東亞合成公司製造的亞龍氧雜環丁烷系列(例如OXT-121、OXT-221、OXT-191、OXT-223),該些可單獨使用,或亦可混合兩種以上。<Oxetane compound (compound having oxetanyl group)> Examples of the oxetane compound include a compound having two or more oxetane rings in one molecule, and 3-ethyl group. 3-hydroxymethyloxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-( 2-ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester, and the like. As a specific example, a series of arylene oxetane (for example, OXT-121, OXT-221, OXT-191, and OXT-223) manufactured by Toagosei Co., Ltd. may be suitably used, and these may be used alone or may be used alone. Mix two or more.

相對於含有雜環的聚合物前驅物100質量份,氧雜環丁烷化合物的含量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。 氧雜環丁烷化合物可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the oxetane compound is preferably from 5 parts by mass to 50 parts by mass, more preferably from 10 parts by mass to 50 parts by mass, even more preferably 10% by mass based on 100 parts by mass of the polymer precursor containing a hetero ring. Parts - 40 parts by mass. The oxetane compound may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<苯并噁嗪化合物(具有苯并噁唑基的化合物)> 苯并噁嗪化合物因藉由開環加成反應而產生交聯反應,故不會發生由固化所致的脫氣,進而由熱引起的收縮小。因此可抑制翹曲的產生。<Benzothoxazine compound (compound having benzoxazolyl group)> The benzoxazine compound generates a crosslinking reaction by a ring-opening addition reaction, so that degassing due to solidification does not occur, and The shrinkage caused by heat is small. Therefore, the occurrence of warpage can be suppressed.

作為苯并噁嗪化合物的較佳的例子,可列舉:B-a型苯并噁嗪、B-m型苯并噁嗪(以上為商品名,四國化成工業製造)、聚羥基苯乙烯樹脂的苯并噁嗪加成物、苯酚酚醛清漆型二氫苯并噁嗪化合物。該些可單獨使用,或亦可混合兩種以上。Preferable examples of the benzoxazine compound include Ba-type benzoxazine, Bm-type benzoxazine (above, trade name, manufactured by Shikoku Chemical Industries, Ltd.), and benzoxazole of polyhydroxystyrene resin. Azine adduct, phenol novolac type dihydrobenzoxazine compound. These may be used alone or in combination of two or more.

相對於含有雜環的聚合物前驅物100質量份,苯并噁嗪化合物的含量較佳為5質量份~50質量份,更佳為10質量份~50質量份,進而更佳為10質量份~40質量份。 苯并噁嗪化合物可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the benzoxazine compound is preferably from 5 parts by mass to 50 parts by mass, more preferably from 10 parts by mass to 50 parts by mass, even more preferably 10 parts by mass, based on 100 parts by mass of the polymer precursor containing a hetero ring. ~40 parts by mass. The benzoxazine compound may be used alone or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

本發明中使用的交聯劑較佳為分子量為100~1,500,更佳為100~800,進而更佳為100~600。藉由將分子量設為800以下、進而設為600以下,可更有效地提升逸氣性。The crosslinking agent used in the present invention preferably has a molecular weight of from 100 to 1,500, more preferably from 100 to 800, still more preferably from 100 to 600. By setting the molecular weight to 800 or less and further to 600 or less, the outgassing property can be more effectively improved.

<具有酚性OH基的樹脂> 當本發明中的組成物為鹼顯影性的正型感光性樹脂組成物時,就調整對於鹼性顯影液的溶解性且獲得良好的感度的方面而言,較佳為包含具有酚性OH基的樹脂。 作為具有酚性OH基的樹脂,可列舉酚醛清漆樹脂及聚羥基苯乙烯樹脂作為較佳例。<Resin having a phenolic OH group> When the composition in the present invention is an alkali-developable positive photosensitive resin composition, in terms of adjusting the solubility to an alkaline developer and obtaining a good sensitivity, It is preferred to contain a resin having a phenolic OH group. As a resin which has a phenolic OH group, a novolak resin and a polyhydroxy styrene resin are mentioned as a preferable example.

<<酚醛清漆樹脂>> 酚醛清漆樹脂是藉由利用公知的方法將酚類與醛類縮聚而獲得。酚醛清漆樹脂亦可組合兩種以上。 作為所述酚類的較佳例,可列舉:苯酚、鄰甲酚、間甲酚、對甲酚、2,3-二甲酚、2,5-二甲酚、3,4-二甲酚、3,5-二甲酚、2,3,5-三甲基苯酚、3,4,5-三甲基苯酚等。特佳為苯酚、間甲酚、對甲酚、2,3-二甲酚、2,5-二甲酚、3,4-二甲酚、3,5-二甲酚及2,3,5-三甲基苯酚。亦可將該些酚類組合使用兩種以上。就對於鹼性顯影液的溶解性的觀點而言,較佳為間甲酚,間甲酚與對甲酚的組合亦較佳。即,作為酚醛清漆樹脂,較佳為包含間甲酚殘基、或間甲酚殘基與對甲酚殘基的甲酚酚醛清漆樹脂。此時,甲酚酚醛清漆樹脂中的間甲酚殘基與對甲酚殘基的莫耳比(間甲酚殘基/對甲酚殘基,m/p)較佳為1.8以上。若為該範圍,則示出對於鹼性顯影液的適度的溶解性,且可獲得良好的感度。更佳為4以上。 另外,作為所述醛類的較佳例,可列舉:福爾馬林、聚甲醛、乙醛、苯甲醛、羥基苯甲醛、氯乙醛等。亦可使用兩種以上的該些醛類。<<Novolak Resin>> The novolac resin is obtained by polycondensing a phenol and an aldehyde by a well-known method. The novolac resin may be combined in combination of two or more. Preferable examples of the phenols include phenol, o-cresol, m-cresol, p-cresol, 2,3-xylenol, 2,5-xylenol, and 3,4-xylenol. , 3,5-xylenol, 2,3,5-trimethylphenol, 3,4,5-trimethylphenol, and the like. Particularly preferred are phenol, m-cresol, p-cresol, 2,3-xylenol, 2,5-xylenol, 3,4-xylenol, 3,5-xylenol and 2,3,5 - Trimethylphenol. These phenols may be used in combination of two or more kinds. From the viewpoint of the solubility of the alkaline developer, m-cresol and a combination of m-cresol and p-cresol are preferred. That is, as the novolac resin, a cresol novolak resin containing a m-cresol residue or a m-cresol residue and a p-cresol residue is preferable. At this time, the molar ratio (m-cresol residue/p-cresol residue, m/p) of the m-cresol residue to the p-cresol residue in the cresol novolak resin is preferably 1.8 or more. If it is this range, the moderate solubility with respect to an alkaline developing solution is shown, and the favorable sensitivity is acquired. More preferably 4 or more. Further, preferred examples of the aldehydes include formalin, polyoxymethylene, acetaldehyde, benzaldehyde, hydroxybenzaldehyde, and chloroacetaldehyde. It is also possible to use two or more of these aldehydes.

另外,就可對本發明中的組成物的硬化膜賦予高耐熱性的方面而言,較佳為如下的全芳香族型酚醛清漆樹脂:使用作為酚類的由下述通式(Phe)所表示的化合物、作為醛類的由下述通式(Ald)所表示的化合物,並利用酸性觸媒進行縮聚而獲得。In addition, in terms of imparting high heat resistance to the cured film of the composition of the present invention, the following wholly aromatic novolak resin is preferably used as the phenol by the following formula (Phe). The compound represented by the following formula (Ald) as an aldehyde is obtained by polycondensation using an acidic catalyst.

通式(Phe) [化56]通式(Phe)中,R1 表示選自碳數1以上、20以下的烷基及烷氧基中的有機基,p為1以上、3以下的整數,較佳為2以上、3以下的整數。General formula (Phe) [化56] In the formula (Phe), R 1 represents an organic group selected from an alkyl group and an alkoxy group having 1 or more carbon atoms and 20 or less carbon atoms, and p is an integer of 1 or more and 3 or less, preferably 2 or more and 3 or less. Integer.

通式(Ald) [化57]通式(Ald)中,R2 表示選自氫、碳數1以上、20以下的烷基、烷氧基及羥基中的基,q表示0以上、3以下的整數。General formula (Ald) [化57] In the general formula (Ald), R 2 represents a group selected from the group consisting of hydrogen, an alkyl group having 1 or more and 20 or less carbon atoms, an alkoxy group and a hydroxyl group, and q represents an integer of 0 or more and 3 or less.

作為由所述通式(Phe)所表示的酚化合物,為使用取代基的數量為1以上、3以下,較佳為2以上、3以下的酚化合物者,所述取代基為選自碳數為1以上、20以下的烷基及烷氧基中的有機基。再者,作為所述碳數為1以上、20以下的烷基及烷氧基,具體而言,可列舉:甲基、乙基、丙基、甲氧基、乙氧基等。作為此種酚化合物,較佳為例如可使用鄰甲酚、間甲酚、對甲酚、2,3-二甲基苯酚、2,4-二甲基苯酚、2,5-二甲基苯酚、3,4-二甲基苯酚、3,5-二甲基苯酚、2-甲基-3-乙基-苯酚、2-甲基-3-甲氧基苯酚、2,3,4-三甲基苯酚、2,3,5-三甲基苯酚、2,3,6-三甲基苯酚等。該些中,並無特別限定,但較佳為選自2,3-二甲基苯酚、2,4-二甲基苯酚、2,5-二甲基苯酚、3,4-二甲基苯酚、3,5-二甲基苯酚、2,6-二甲基苯酚中者。進而,該些酚類可使用一種或將兩種以上混合使用。 藉由將取代基的數量為1以上、3以下,較佳為2以上、3以下的酚化合物用作所述酚化合物,可獲得抑制分子內旋轉,且具有組成物所需的充分的耐熱性的酚樹脂。The phenol compound represented by the above formula (Phe) is a phenol compound having a number of substituents of 1 or more and 3 or less, preferably 2 or more and 3 or less, and the substituent is selected from a carbon number. It is an organic group in the alkyl group and alkoxy group of 1 or more and 20 or less. In addition, examples of the alkyl group and the alkoxy group having 1 or more and 20 or less carbon atoms include a methyl group, an ethyl group, a propyl group, a methoxy group, and an ethoxy group. As such a phenol compound, for example, o-cresol, m-cresol, p-cresol, 2,3-dimethylphenol, 2,4-dimethylphenol, 2,5-dimethylphenol can be preferably used. , 3,4-dimethylphenol, 3,5-dimethylphenol, 2-methyl-3-ethyl-phenol, 2-methyl-3-methoxyphenol, 2,3,4-tri Methyl phenol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, and the like. Among these, it is not particularly limited, but is preferably selected from the group consisting of 2,3-dimethylphenol, 2,4-dimethylphenol, 2,5-dimethylphenol, and 3,4-dimethylphenol. Among 3,5-dimethylphenol and 2,6-dimethylphenol. Further, these phenols may be used alone or in combination of two or more. By using the phenol compound having 1 or more and 3 or less, preferably 2 or more and 3 or less as the phenol compound, it is possible to suppress the intramolecular rotation and have sufficient heat resistance required for the composition. Phenolic resin.

作為由所述通式(Ald)所表示的芳香族醛化合物,為使用未經取代、或取代基的數量為3以下的芳香族醛化合物者,所述取代基為選自碳數為1以上、20以下的烷基、烷氧基及羥基中的有機基。再者,作為所述碳數為1以上、20以下的烷基及烷氧基,具體而言,可列舉:甲基、乙基、丙基、甲氧基、乙氧基等。作為此種芳香族醛化合物,例如可使用:苯甲醛、2-甲基苯甲醛、3-甲基苯甲醛、4-甲基苯甲醛、2,3-二甲基苯甲醛、2,4-二甲基苯甲醛、2,5-二甲基苯甲醛、2,6-二甲基苯甲醛、3,4-二甲基苯甲醛、3,5-二甲基苯甲醛、2,3,4-三甲基苯甲醛、2,3,5-三甲基苯甲醛、2,3,6-三甲基苯甲醛、2,4,5-三甲基苯甲醛、2,4,6-三甲基苯甲醛、3,4,5-三甲基苯甲醛、4-乙基苯甲醛、4-第三丁基苯甲醛、4-異丁基苯甲醛、4-甲氧基苯甲醛、柳醛(salicylaldehyde)、3-羥基苯甲醛、4-羥基苯甲醛、3-甲基柳醛、4-甲基柳醛、2-羥基-5-甲氧基苯甲醛、2,4-二羥基苯甲醛、2,5-二羥基苯甲醛、2,3,4-三羥基苯甲醛等,但並不限定於該些,該些中,較佳為通式(2)中的R2 為氫、甲基、羥基的芳香族醛化合物,更佳為選自下述所示的芳香族醛化合物中者。進而,該些醛類可使用一種或將兩種以上混合使用。The aromatic aldehyde compound represented by the above formula (Ald) is an aromatic aldehyde compound having an unsubstituted or substituted number of 3 or less, and the substituent is selected from a carbon number of 1 or more. An alkyl group, an alkoxy group or an organic group in a hydroxyl group of 20 or less. In addition, examples of the alkyl group and the alkoxy group having 1 or more and 20 or less carbon atoms include a methyl group, an ethyl group, a propyl group, a methoxy group, and an ethoxy group. As such an aromatic aldehyde compound, for example, benzaldehyde, 2-methylbenzaldehyde, 3-methylbenzaldehyde, 4-methylbenzaldehyde, 2,3-dimethylbenzaldehyde, 2,4- can be used. Dimethylbenzaldehyde, 2,5-dimethylbenzaldehyde, 2,6-dimethylbenzaldehyde, 3,4-dimethylbenzaldehyde, 3,5-dimethylbenzaldehyde, 2,3, 4-trimethylbenzaldehyde, 2,3,5-trimethylbenzaldehyde, 2,3,6-trimethylbenzaldehyde, 2,4,5-trimethylbenzaldehyde, 2,4,6- Trimethylbenzaldehyde, 3,4,5-trimethylbenzaldehyde, 4-ethylbenzaldehyde, 4-t-butylbenzaldehyde, 4-isobutylbenzaldehyde, 4-methoxybenzaldehyde, Salicylaldehyde, 3-hydroxybenzaldehyde, 4-hydroxybenzaldehyde, 3-methylsauraldehyde, 4-methylsauraldehyde, 2-hydroxy-5-methoxybenzaldehyde, 2,4-dihydroxyl But benzaldehyde, 2,5-dihydroxybenzaldehyde, 2,3,4-trihydroxybenzaldehyde, etc., but not limited thereto, and in these, R 2 in the formula (2) is preferably hydrogen The aromatic aldehyde compound having a methyl group or a hydroxyl group is more preferably selected from the aromatic aldehyde compounds shown below. Further, these aldehydes may be used alone or in combination of two or more.

[化58] [化58]

於由酚類與醛類獲得酚醛清漆樹脂的合成反應中,相對於酚化合物1莫耳,較佳為使醛化合物以0.5莫耳以上、2莫耳以下反應,更佳為以0.6莫耳以上、1.2莫耳以下反應,特佳為以0.7莫耳以上、1.0莫耳以下反應。藉由設為所述莫耳比,可獲得能夠作為組成物而發揮充分特性的分子量。In the synthesis reaction of obtaining a novolac resin from a phenol and an aldehyde, it is preferred to react the aldehyde compound at 0.5 mol or more and 2 mol or less with respect to the phenol compound 1 mol, more preferably 0.6 mol or more. The reaction of 1.2 m or less is particularly preferably a reaction of 0.7 mol or more and 1.0 mol or less. By setting the molar ratio, it is possible to obtain a molecular weight which can exhibit sufficient characteristics as a composition.

酚類與醛類的縮聚反應中,通常使用酸性觸媒。作為該酸性觸媒,例如可列舉:鹽酸、硝酸、硫酸、甲酸、草酸、乙酸、對甲苯磺酸等。相對於酚類1莫耳,該些酸性觸媒的使用量通常為1×10-5 莫耳~5×10-1 莫耳。於縮聚反應中,通常使用水作為反應介質,但當自反應初期起為不均一系統時,使用親水性溶媒或親油性溶媒作為反應介質。作為親水性溶媒,例如可列舉:甲醇、乙醇、丙醇、丁醇、丙二醇單甲醚等醇類;四氫呋喃、二噁烷等環狀醚類。作為親油性溶媒,可列舉:甲基乙基酮、甲基異丁基酮、2-庚酮等酮類。相對於反應原料100質量份,該些反應介質的使用量通常為20質量份~1,000質量份。In the polycondensation reaction of phenols and aldehydes, an acidic catalyst is usually used. Examples of the acidic catalyst include hydrochloric acid, nitric acid, sulfuric acid, formic acid, oxalic acid, acetic acid, and p-toluenesulfonic acid. The acid catalyst is usually used in an amount of from 1 × 10 -5 mol to 5 × 10 -1 mol per phenol. In the polycondensation reaction, water is usually used as the reaction medium, but when it is a non-uniform system from the initial stage of the reaction, a hydrophilic solvent or a lipophilic solvent is used as the reaction medium. Examples of the hydrophilic solvent include alcohols such as methanol, ethanol, propanol, butanol, and propylene glycol monomethyl ether; and cyclic ethers such as tetrahydrofuran and dioxane. Examples of the lipophilic solvent include ketones such as methyl ethyl ketone, methyl isobutyl ketone, and 2-heptanone. The reaction medium is usually used in an amount of from 20 parts by mass to 1,000 parts by mass based on 100 parts by mass of the reaction raw material.

縮聚的反應溫度可根據原料的反應性適宜調整,通常為10℃~200℃。作為縮聚的反應方法,可適宜採用如下的方法等:將酚類、醛類、酸性觸媒等一併投入並使其反應的方法;或者於酸性觸媒的存在下伴隨反應的進行而添加酚類、醛類等的方法。縮聚反應結束後,為了去除於系統內所存在的未反應原料、酸性觸媒、反應介質等,通常而言,使反應溫度上升至130℃~230℃,於減壓下去除揮發成分,並回收酚醛清漆樹脂。The reaction temperature of the polycondensation can be appropriately adjusted depending on the reactivity of the raw material, and is usually from 10 ° C to 200 ° C. As a reaction method of the polycondensation, a method in which a phenol, an aldehyde, an acid catalyst, or the like is simultaneously introduced and reacted may be suitably employed; or a phenol may be added in the presence of an acidic catalyst accompanying the progress of the reaction. Methods such as aldehydes and the like. After the completion of the polycondensation reaction, in order to remove the unreacted raw materials, the acidic catalyst, the reaction medium, and the like existing in the system, the reaction temperature is generally raised to 130 ° C to 230 ° C, and the volatile components are removed under reduced pressure and recovered. Novolak resin.

酚醛清漆樹脂的聚苯乙烯換算重量平均分子量(以下,稱為「Mw」)較佳為1,000以上,更佳為2,000以上。另外,較佳為5,000以下。若為該範圍,則可獲得良好的感度。The polystyrene-equivalent weight average molecular weight (hereinafter referred to as "Mw") of the novolak resin is preferably 1,000 or more, and more preferably 2,000 or more. Further, it is preferably 5,000 or less. If it is this range, good sensitivity can be obtained.

相對於含有雜環的聚合物前驅物100質量份,酚醛清漆樹脂的含量較佳為1質量份以上、70質量份以下,更佳為10質量份以上、70質量份以下。若為該範圍,則可獲得高感度且在高溫下的熱處理後不會流動的圖案。酚醛清漆樹脂可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the novolak resin is preferably 1 part by mass or more and 70 parts by mass or less, more preferably 10 parts by mass or more and 70 parts by mass or less with respect to 100 parts by mass of the polymer precursor containing a hetero ring. If it is this range, the pattern which is high sensitivity and does not flow after heat processing at high temperature can be obtained. The novolak resin may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<<聚羥基苯乙烯樹脂>> 羥基苯乙烯樹脂為包含羥基苯乙烯及/或其衍生物的聚合物,並無特別限定,亦可為包含羥基苯乙烯及/或其衍生物、以及該些以外的單體的共聚物。作為此處使用的單體,例如可列舉:乙烯、丙烯、1-丁烯、2-甲基丙烯、苯乙烯及其衍生物等。其中,就可容易地調整對於鹼性水溶液的溶解性的觀點而言,較佳為包含羥基苯乙烯及/或其衍生物、以及苯乙烯及/或其衍生物的共聚物。所述衍生物為於羥基苯乙烯及苯乙烯的芳香環的鄰位、間位、對位上烷基、烷氧基、羥基等進行了取代者。羥基苯乙烯樹脂的羥基苯乙烯可為鄰羥基苯乙烯、間羥基苯乙烯、對羥基苯乙烯的任一者。另外,所述羥基苯乙烯亦可混合存在多種。<<Polyhydroxystyrene resin>> The hydroxystyrene resin is a polymer containing hydroxystyrene and/or a derivative thereof, and is not particularly limited, and may contain hydroxystyrene and/or a derivative thereof, and these A copolymer of a monomer other than the monomer. Examples of the monomer used herein include ethylene, propylene, 1-butene, 2-methylpropene, styrene, and derivatives thereof. Among them, a copolymer containing hydroxystyrene and/or a derivative thereof and styrene and/or a derivative thereof is preferred from the viewpoint of easily adjusting the solubility in an aqueous alkaline solution. The derivative is substituted with an ortho, meta, or para-alkyl group, an alkoxy group, a hydroxyl group or the like in the aromatic ring of hydroxystyrene and styrene. The hydroxystyrene of the hydroxystyrene resin may be any of o-hydroxystyrene, m-hydroxystyrene, and p-hydroxystyrene. Further, the hydroxystyrene may be mixed in a plurality of types.

羥基苯乙烯樹脂中的所述羥基苯乙烯及其衍生物的構成比率較佳為50%以上,更佳為60%以上。上限較佳為90%以下,更佳為80%以下。藉由設為所述範圍,具有使曝光部的曝光後殘渣的減低與高感度化的並存優異的效果。The composition ratio of the hydroxystyrene and its derivative in the hydroxystyrene resin is preferably 50% or more, more preferably 60% or more. The upper limit is preferably 90% or less, more preferably 80% or less. By setting it as the said range, it is excellent in the coexistence of the fall of the residue after exposure of an exposure part, and the high sensitivity.

其中,較佳為具有由下述通式(PHS-1)所表示的重複結構單元的羥基苯乙烯樹脂。Among them, a hydroxystyrene resin having a repeating structural unit represented by the following formula (PHS-1) is preferred.

通式(PHS-1) [化59]通式(PHS-1)中,R1 表示氫原子或碳數1~5的烷基,a表示1~4,b表示1~3,a+b為1~5的範圍內。R2 表示選自氫原子、甲基、乙基或丙基中的原子或者一個基。General formula (PHS-1) [化59] In the formula (PHS-1), R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, a represents 1 to 4, b represents 1 to 3, and a + b is in the range of 1 to 5. R 2 represents an atom or a group selected from a hydrogen atom, a methyl group, an ethyl group or a propyl group.

由所述通式(PHS-1)所表示的結構單元例如可藉由利用公知的方法使烷氧基與如下的聚合物或共聚物的一部分進行加成反應而獲得,所述聚合物或共聚物為利用公知的方法使對羥基苯乙烯、間羥基苯乙烯、鄰羥基苯乙烯、對異丙烯基苯酚、間異丙烯基苯酚、鄰異丙烯基苯酚等具有酚性羥基的芳香族乙烯基化合物,及苯乙烯、鄰甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯等芳香族乙烯基化合物中的單獨或兩種以上聚合而獲得。 具有酚性羥基的芳香族乙烯基化合物可較佳地使用對羥基苯乙烯及/或間羥基苯乙烯,芳香族乙烯基化合物可較佳地使用苯乙烯。The structural unit represented by the above formula (PHS-1) can be obtained, for example, by subjecting an alkoxy group to a partial reaction of a polymer or a copolymer obtained by a known method, the polymer or copolymerization An aromatic vinyl compound having a phenolic hydroxyl group such as p-hydroxystyrene, m-hydroxystyrene, o-hydroxystyrene, p-isopropenylphenol, m-isopropenylphenol or o-isopropenylphenol by a known method. And obtained by polymerizing one or two or more kinds of aromatic vinyl compounds such as styrene, o-methylstyrene, m-methylstyrene, and p-methylstyrene. As the aromatic vinyl compound having a phenolic hydroxyl group, p-hydroxystyrene and/or m-hydroxystyrene can be preferably used, and an aromatic vinyl compound can preferably use styrene.

具有由所述通式(PHS-1)所表示的重複結構單元的羥基苯乙烯樹脂中,就進一步提升感度、可調整對於鹼性顯影液的溶解性的便利性的方面而言,較佳為包含由通式(PHS-2)、通式(PHS-3)、及通式(PHS-4)所表示的結構單元的共聚物。進而,就對於鹼性顯影液的溶解性的方面而言,通式(PHS-4)的結構單元較佳為50莫耳%以下。In the hydroxystyrene resin having a repeating structural unit represented by the above formula (PHS-1), it is preferred that the sensitivity is further improved and the solubility in the alkaline developing solution can be adjusted. A copolymer comprising a structural unit represented by the formula (PHS-2), the formula (PHS-3), and the formula (PHS-4). Further, in terms of solubility in an alkaline developer, the structural unit of the formula (PHS-4) is preferably 50 mol% or less.

通式(PHS-2) [化60]通式(PHS-2)中,R4 表示氫原子或碳數1~5的烷基,c表示1~4,d表示1~3,c+d為2~5的範圍內。R3 表示選自氫原子、甲基、乙基或丙基中的原子或者一個基。General formula (PHS-2) [60] In the formula (PHS-2), R 4 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, c represents 1 to 4, d represents 1 to 3, and c + d is in the range of 2 to 5. R 3 represents an atom or a group selected from a hydrogen atom, a methyl group, an ethyl group or a propyl group.

通式(PHS-3) [化61]通式(PHS-3)中,R5 表示氫原子或碳數1~5的烷基,e表示1~5。General formula (PHS-3) [Chem. 61] In the formula (PHS-3), R 5 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and e represents 1 to 5.

通式(PHS-4) [化62]通式(PHS-4)中,R6 表示氫原子或碳數1~5的烷基。General formula (PHS-4) [Chem. 62] In the formula (PHS-4), R 6 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

羥基苯乙烯樹脂的重量平均分子量(Mw)較佳為1,000以上,更佳為2,000以上,特佳為2,500以上,較佳為10,000以下,更佳為8,000以下,特佳為7,000以下。藉由設為所述範圍,具有使高感度化與清漆的常溫保存性的並存優異的效果。 相對於含有雜環的聚合物前驅物100質量份,羥基苯乙烯樹脂的含量較佳為1質量份以上、70質量份以下,更佳為10質量份以上、70質量份以下。若為該範圍,則可獲得高感度且於高溫下的熱處理後不會流動的圖案。羥基苯乙烯樹脂可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The weight average molecular weight (Mw) of the hydroxystyrene resin is preferably 1,000 or more, more preferably 2,000 or more, particularly preferably 2,500 or more, preferably 10,000 or less, more preferably 8,000 or less, and particularly preferably 7,000 or less. By setting it as the said range, it is excellent in the coexistence of the high-sensitivity and the normal-temperature storage property of a varnish. The content of the hydroxystyrene resin is preferably 1 part by mass or more and 70 parts by mass or less, more preferably 10 parts by mass or more and 70 parts by mass or less with respect to 100 parts by mass of the polymer precursor containing a hetero ring. If it is this range, the pattern which does not flow after the heat processing after high temperature can be acquired with high sensitivity. The hydroxystyrene resin may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<光自由基聚合起始劑> 本發明的組成物亦可含有光自由基聚合起始劑。藉由組成物包含光自由基聚合起始劑,於將組成物應用於半導體晶圓等而形成組成物層後,照射光,藉此因自由基而引起硬化,且可使光照射部中的溶解性降低。因此,例如隔著具有僅掩蓋電極部的圖案的光罩對所述組成物層進行曝光,藉此具有可根據電極的圖案,簡便地製作溶解性不同的區域這一優點。<Photoradical polymerization initiator> The composition of the present invention may further contain a photoradical polymerization initiator. When the composition contains a photo-radical polymerization initiator, the composition is applied to a semiconductor wafer or the like to form a composition layer, and then light is irradiated, thereby causing hardening by radicals, and the light irradiation portion can be formed. The solubility is lowered. Therefore, for example, the composition layer is exposed through a photomask having a pattern covering only the electrode portions, whereby it is possible to easily produce regions having different solubility depending on the pattern of the electrodes.

作為光自由基聚合起始劑,只要具有使聚合性化合物的聚合反應(交聯反應)開始的能力,則並無特別限制,可自公知的光自由基聚合起始劑中適宜選擇。例如,較佳為對於紫外線區域至可見區域的光線具有感光性者。另外,可為與經光激發的增感劑產生某種作用,而生成活性自由基的活性劑。 作為光自由基聚合起始劑,較佳為含有至少一種如下的化合物,該化合物於約300 nm~800 nm(較佳為330 nm~500 nm)的範圍內至少具有約50的莫耳吸光係數。化合物的莫耳吸光係數可使用公知的方法來測定。例如較佳為藉由紫外可見分光光度計(瓦里安(Varian)公司製造的Cary-5分光光度計(spectrophotometer)),並利用乙酸乙酯溶媒,以0.01 g/L的濃度進行測定。The photo-radical polymerization initiator is not particularly limited as long as it has a function of starting a polymerization reaction (cross-linking reaction) of the polymerizable compound, and can be appropriately selected from known photo-radical polymerization initiators. For example, it is preferred that the light from the ultraviolet region to the visible region is photosensitive. Alternatively, it may be an active agent that produces a reactive radical with a certain effect on the photoexcited sensitizer. As the photoradical polymerization initiator, it is preferred to contain at least one compound having a Mohr absorption coefficient of at least about 50 in the range of about 300 nm to 800 nm (preferably 330 nm to 500 nm). . The molar absorption coefficient of the compound can be determined by a known method. For example, it is preferably measured by a UV-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian Co., Ltd.) using an ethyl acetate solvent at a concentration of 0.01 g/L.

作為光自由基聚合起始劑,可無限制地使用公知的化合物,例如可列舉:鹵化烴衍生物(例如具有三嗪骨架者、具有噁二唑骨架者、具有三鹵甲基者等)、醯基氧化膦等醯基膦化合物、六芳基聯咪唑、肟衍生物等肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮基化合物、茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。As a photoradical polymerization initiator, a known compound can be used without limitation, and examples thereof include a halogenated hydrocarbon derivative (for example, a triazine skeleton, a oxadiazole skeleton, a trihalomethyl group, etc.), a mercaptophosphine compound such as a mercaptophosphine oxide, an antimony compound such as a hexaarylbiimidazole or an anthracene derivative, an organic peroxide, a sulfur compound, a ketone compound, an aromatic onium salt, a ketoxime ether, an aminoacetophenone compound, Hydroxyacetophenone, azo compound, azide compound, metallocene compound, organoboron compound, iron aromatic hydrocarbon complex, and the like.

作為具有三嗪骨架的鹵化烴衍生物,例如可列舉:若林等著,「日本化學學會通報(Bull. Chem. Soc. Japan)」,42,2924(1969)中記載的化合物,英國專利1388492號說明書中記載的化合物,日本專利特開昭53-133428號公報中記載的化合物,德國專利3337024號說明書中記載的化合物,F.C.謝弗(F. C. Schaefer)等的「有機化學期刊(J. Org. Chem.)」,29,1527(1964)中記載的化合物,日本專利特開昭62-58241號公報中記載的化合物,日本專利特開平5-281728號公報中記載的化合物,日本專利特開平5-34920號公報中記載的化合物,美國專利第4212976號說明書中記載的化合物等。Examples of the halogenated hydrocarbon derivative having a triazine skeleton include a compound described in Japanese Society of Chemical Engineering (Bull. Chem. Soc. Japan), 42, 2924 (1969), and British Patent No. 1,888,492. A compound described in the specification, a compound described in JP-A-53-133428, a compound described in the specification of German Patent No. 3337024, and an organic chemical journal (J. Org. Chem, FC Schaefer, etc.) The compound described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The compound described in the publication No. 34920, and the compound described in the specification of U.S. Patent No. 4,212,976.

作為美國專利第4212976號說明書中所記載的化合物,例如可列舉:具有噁二唑骨架的化合物(例如2-三氯甲基-5-苯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯基)-1,3,4-噁二唑、2-三氯甲基-5-(1-萘基)-1,3,4-噁二唑、2-三氯甲基-5-(2-萘基)-1,3,4-噁二唑、2-三溴甲基-5-苯基-1,3,4-噁二唑、2-三溴甲基-5-(2-萘基)-1,3,4-噁二唑、2-三氯甲基-5-苯乙烯基-1,3,4-噁二唑、2-三氯甲基-5-(4-氯苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(4-甲氧基苯乙烯基)-1,3,4-噁二唑、2-三氯甲基-5-(4-正丁氧基苯乙烯基)-1,3,4-噁二唑、2-三溴甲基-5-苯乙烯基-1,3,4-噁二唑等)等。Examples of the compound described in the specification of U.S. Patent No. 4,212,976 include compounds having an oxadiazole skeleton (e.g., 2-trichloromethyl-5-phenyl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorophenyl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4-oxadiazole , 2-trichloromethyl-5-(2-naphthyl)-1,3,4-oxadiazole, 2-tribromomethyl-5-phenyl-1,3,4-oxadiazole, 2 -Tribromomethyl-5-(2-naphthyl)-1,3,4-oxadiazole, 2-trichloromethyl-5-styryl-1,3,4-oxadiazole, 2- Trichloromethyl-5-(4-chlorostyryl)-1,3,4-oxadiazole, 2-trichloromethyl-5-(4-methoxystyryl)-1,3, 4-oxadiazole, 2-trichloromethyl-5-(4-n-butoxystyryl)-1,3,4-oxadiazole, 2-tribromomethyl-5-styryl- 1,3,4-oxadiazole, etc.).

另外,作為所述以外的光自由基聚合起始劑,可例示日本專利特開2015-087611號公報的段落號0086中記載的化合物,日本專利特開昭53-133428號公報、日本專利特公昭57-1819號公報、日本專利特公昭57-6096號公報、及美國專利第3615455號說明書中所記載的化合物等,將該些內容併入本說明書中。In addition, as a photo-radical polymerization initiator other than the above, a compound described in Paragraph No. 0086 of JP-A-2015-087611, Japanese Patent Laid-Open No. Sho 53-133428, Japanese Patent No. The compounds described in the specification of Japanese Patent Publication No. Sho 57-6096, and the specification of U.S. Patent No. 3,615,455 are incorporated herein by reference.

作為酮化合物,例如可例示日本專利特開2015-087611號公報的段落號0087中記載的化合物,將該些內容併入本說明書中。 市售品中,亦可適宜地使用卡亞庫(Kayacure)DETX(日本化藥製造)。The ketone compound may, for example, be a compound described in Paragraph No. 0087 of JP-A-2015-087611, which is incorporated herein by reference. Among the commercially available products, Kayacure DETX (manufactured by Nippon Kayaku Co., Ltd.) can also be suitably used.

作為光自由基聚合起始劑,亦可適宜地使用羥基苯乙酮化合物、胺基苯乙酮化合物、及醯基膦化合物。更具體而言,例如亦可使用日本專利特開平10-291969號公報中記載的胺基苯乙酮系起始劑、日本專利第4225898號公報中記載的醯基氧化膦系起始劑。 作為羥基苯乙酮系起始劑,可使用豔佳固(IRGACURE)-184(豔佳固(IRGACURE)為註冊商標)、達羅卡(DAROCUR)-1173、豔佳固(IRGACURE)-500、豔佳固(IRGACURE)-2959、豔佳固(IRGACURE)-127(商品名:均為巴斯夫(BASF)公司製造)。 作為胺基苯乙酮系起始劑,可使用作為市售品的豔佳固(IRGACURE)-907、豔佳固(IRGACURE)-369、及豔佳固(IRGACURE)-379(商品名:均為巴斯夫公司製造)。 作為胺基苯乙酮系起始劑,亦可使用最大吸收波長與365 nm或405 nm等的光源匹配的日本專利特開2009-191179號公報中記載的化合物。 作為醯基膦系起始劑,可使用作為市售品的豔佳固(IRGACURE)-819或達羅卡(DAROCUR)-TPO(商品名:均為巴斯夫公司製造)。 作為茂金屬化合物,可例示豔佳固(IRGACURE)-784(巴斯夫公司製造)等。As the photoradical polymerization initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and a mercaptophosphine compound can also be suitably used. More specifically, for example, an amino acetophenone-based initiator as described in JP-A-10-291969, and a sulfhydryl phosphine oxide-based initiator described in Japanese Patent No. 4,258,899 can be used. As the hydroxyacetophenone-based initiator, IRGACURE-184 (IRGACURE is a registered trademark), DAROCUR-1173, and IRGACURE-500 can be used. IRGACURE-2959, IRGACURE-127 (trade name: all manufactured by BASF). As the aminoacetophenone-based initiator, IRGACURE-907, IRGACURE-369, and IRGACURE-379 can be used as commercially available products (trade name: Made for BASF). As the aminoacetophenone-based initiator, a compound described in JP-A-2009-191179, which has a maximum absorption wavelength and a light source of 365 nm or 405 nm, can also be used. As the mercaptophosphine-based initiator, IRGACURE-819 or DAROCUR-TPO (trade name: all manufactured by BASF Corporation), which is a commercially available product, can be used. As the metallocene compound, IRGACURE-784 (manufactured by BASF Corporation) and the like can be exemplified.

作為光自由基聚合起始劑,更佳為可列舉肟化合物。作為肟化合物的具體例,可使用日本專利特開2001-233842號公報中記載的化合物、日本專利特開2000-80068號公報中記載的化合物、日本專利特開2006-342166號公報中記載的化合物。 作為較佳的肟化合物,例如可列舉:3-苯甲醯氧基亞胺基丁烷-2-酮、3-乙醯氧基亞胺基丁烷-2-酮、3-丙醯氧基亞胺基丁烷-2-酮、2-乙醯氧基亞胺基戊烷-3-酮、2-乙醯氧基亞胺基-1-苯基丙烷-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙烷-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁烷-2-酮、及2-乙氧基羰氧基亞胺基-1-苯基丙烷-1-酮等。 [化63] As the photoradical polymerization initiator, a ruthenium compound is more preferable. As a specific example of the ruthenium compound, a compound described in JP-A-2001-233842, a compound described in JP-A-2000-80068, and a compound described in JP-A-2006-342166 can be used. . Preferred examples of the hydrazine compound include 3-benzylideneoxyimidobutan-2-one, 3-ethyloxyiminobutane-2-one, and 3-propoxycarbonyl group. Iminobutan-2-one, 2-ethyloxyiminopentan-3-one, 2-ethyloxyimino-1-phenylpropan-1-one, 2-phenyl Nonyloxyimino-1-phenylpropan-1-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one, and 2-ethoxycarbonyloxyimido -1-Phenylpropan-1-one and the like. [化63]

作為肟化合物,可列舉:「英國化學會誌,柏爾金匯刊II(J. C. S. Perkin II)」(1979年)pp.1653-1660、「英國化學會誌,柏爾金匯刊II」(1979年)pp.156-162、「光聚合物科學與技術雜誌(Journal of Photopolymer Science and Technology)」(1995年、pp.202-232)、日本專利特開2000-66385號、日本專利特開2000-80068號、日本專利特表2004-534797號、日本專利特開2006-342166號各公報中記載的化合物等。 市售品中,亦可適宜地使用豔佳固(IRGACURE)-OXE01(巴斯夫公司製造)、豔佳固(IRGACURE)-OXE02(巴斯夫公司製造)、N-1919(艾迪科公司製造)。另外,亦可使用TR-PBG-304(常州強力電子新材料有限公司製造)、艾迪科亞克魯茲(ADEKA ARCLUZ)NCI-831及艾迪科亞克魯茲(ADEKA ARCLUZ)NCI-930(艾迪科公司製造)。As the ruthenium compound, "JCS Perkin II" (JCS Perkin II) (1979) pp. 1653-1660, "British Chemical Society, Berkin Journal II" (1979) Pp. 156-162, "Journal of Photopolymer Science and Technology" (1995, pp. 202-232), Japanese Patent Laid-Open No. 2000-66385, Japanese Patent Special Open 2000 The compound described in each of the publications of Japanese Patent Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. Among the commercially available products, IRGACURE-OXE01 (manufactured by BASF Corporation), IRGACURE-OXE02 (manufactured by BASF Corporation), and N-1919 (manufactured by Adeco Co., Ltd.) can be suitably used. In addition, TR-PBG-304 (made by Changzhou Power Electronic New Materials Co., Ltd.), ADEKA ARCLUZ NCI-831, and ADEKA ARCLUZ NCI-930 (Adico) can also be used. Made by the company).

另外,亦可使用咔唑環的N位上連結有肟的日本專利特表2009-519904號公報中記載的化合物、二苯甲酮部位上導入有雜取代基的美國專利7626957號公報中記載的化合物、色素部位上導入有硝基的日本專利特開2010-15025號公報及美國專利公開2009-292039號公報中記載的化合物、國際公開WO2009/131189號公報中記載的酮肟化合物、於同一分子內包含三嗪骨架與肟骨架的美國專利7556910號公報中記載的化合物、於405 nm下具有最大吸收且對於g射線光源具有良好的感度的日本專利特開2009-221114號公報中記載的化合物等。 另外,亦可適宜地使用日本專利特開2007-231000號公報、及日本專利特開2007-322744號公報中所記載的環狀肟化合物。環狀肟化合物中,尤其日本專利特開2010-32985號公報、日本專利特開2010-185072號公報中所記載的於咔唑色素中縮環的環狀肟化合物具有高的光吸收性,就高感度化的觀點而言較佳。 另外,亦可適宜地使用作為於肟化合物的特定部位上具有不飽和鍵的化合物的日本專利特開2009-242469號公報中記載的化合物。 另外,亦可使用具有氟原子的肟化合物。作為此種肟化合物的具體例,可列舉:日本專利特開2010-262028號公報中所記載的化合物,日本專利特表2014-500852號公報的段落號0345中所記載的化合物24、化合物36~化合物40,日本專利特開2013-164471號公報的段落號0101中所記載的化合物(C-3)等。作為具體例,可列舉以下的化合物。 [化64]作為最佳的肟化合物,可列舉:日本專利特開2007-269779號公報中所示的具有特定取代基的肟化合物、或日本專利特開2009-191061號公報中所示的具有硫代芳基的肟化合物等。In addition, the compound described in Japanese Patent Laid-Open Publication No. 2009-519904, which is linked to the N-position of the carbazole ring, and the U.S. Patent No. 7,626,957, the disclosure of which is incorporated herein by reference. The ketone oxime compound described in Japanese Patent Laid-Open Publication No. 2010-15025, and the ketone oxime compound described in International Publication WO2009/131189, in the same molecule A compound described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. . In addition, the cyclic anthraquinone compound described in JP-A-2007-2320, and JP-A-2007-322744 can also be suitably used. Among the cyclic ruthenium compounds, the cyclic ruthenium compound condensed in the carbazole dye described in Japanese Patent Laid-Open Publication No. 2010-185072, and the Japanese Patent Publication No. 2010-185072 has high light absorption properties. It is preferable from the viewpoint of high sensitivity. In addition, a compound described in JP-A-2009-242469, which is a compound having an unsaturated bond at a specific site of a ruthenium compound, can be suitably used. Further, an anthracene compound having a fluorine atom can also be used. Specific examples of such a ruthenium compound include the compound described in JP-A-2010-262028, and the compound 24 and the compound 36 as described in paragraph 0345 of JP-A-2014-500852. The compound (C-3) and the like described in Paragraph No. 0101 of JP-A-2013-164471. Specific examples thereof include the following compounds. [化64] The ruthenium compound having a specific substituent as shown in Japanese Laid-Open Patent Publication No. 2007-269779, or the thioaryl group shown in Japanese Patent Laid-Open Publication No. 2009-191061肟 compounds, etc.

就曝光感度的觀點而言,光自由基聚合起始劑較佳為選自由三鹵甲基三嗪化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、茂金屬化合物、肟化合物、三芳基咪唑二聚體、鎓化合物、苯并噻唑化合物、二苯甲酮化合物、苯乙酮化合物及其衍生物、環戊二烯-苯-鐵錯合物及其鹽、鹵甲基噁二唑化合物、3-芳基取代香豆素化合物所組成的群組中的化合物。 更佳為三鹵甲基三嗪化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、肟化合物、三芳基咪唑二聚體、鎓化合物、二苯甲酮化合物、苯乙酮化合物,進而更佳為三鹵甲基三嗪化合物、α-胺基酮化合物、肟化合物、三芳基咪唑二聚體、二苯甲酮化合物,最佳為使用肟化合物。From the viewpoint of exposure sensitivity, the photoradical polymerization initiator is preferably selected from the group consisting of a trihalomethyltriazine compound, a benzyldimethylketal compound, an α-hydroxyketone compound, an α-aminoketone compound, Mercaptophosphine compound, phosphine oxide compound, metallocene compound, hydrazine compound, triaryl imidazole dimer, hydrazine compound, benzothiazole compound, benzophenone compound, acetophenone compound and its derivative, cyclopentadiene a compound of the group consisting of a benzene-iron complex and a salt thereof, a halomethyl oxadiazole compound, and a 3-aryl-substituted coumarin compound. More preferably, it is a trihalomethyltriazine compound, an α-amino ketone compound, a mercaptophosphine compound, a phosphine oxide compound, an anthraquinone compound, a triaryl imidazole dimer, an anthraquinone compound, a benzophenone compound, an acetophenone compound. Further, a trihalomethyltriazine compound, an α-aminoketone compound, an anthraquinone compound, a triaryl imidazole dimer, and a benzophenone compound are more preferable, and a ruthenium compound is preferably used.

當組成物包含光自由基聚合起始劑時,相對於組成物的總固體成分,光自由基聚合起始劑的含量較佳為0.1質量%~30質量%,更佳為0.1質量%~20質量%,進而更佳為0.1質量%~10質量%。 光自由基聚合起始劑可僅為一種,亦可為兩種以上。當光自由基聚合起始劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a photoradical polymerization initiator, the content of the photoradical polymerization initiator is preferably from 0.1% by mass to 30% by mass, more preferably from 0.1% by mass to 20%, based on the total solid content of the composition. The mass%, more preferably 0.1% by mass to 10% by mass. The photoradical polymerization initiator may be used alone or in combination of two or more. When the photoradical polymerization initiator is two or more kinds, it is preferred that the total is in the above range.

<光酸產生劑> 本發明中的組成物亦可含有光酸產生劑。藉由含有光酸產生劑,於曝光部中產生酸,且曝光部對於鹼性水溶液的溶解性增大,故可用作正型組成物。<Photoacid generator> The composition in the present invention may further contain a photoacid generator. By containing a photoacid generator, an acid is generated in the exposed portion, and the solubility of the exposed portion in the alkaline aqueous solution is increased, so that it can be used as a positive type composition.

作為光酸產生劑,可列舉:醌二疊氮化合物、鋶鹽、鏻鹽、重氮鎓鹽、錪鹽等。其中,就顯現出優異的溶解抑制效果、而且獲得高感度且膜薄化小的組成物的方面而言,較佳為使用醌二疊氮化合物。另外,亦可含有兩種以上的光酸產生劑。藉此,可進一步增大曝光部與未曝光部的溶解速度的比,從而可獲得高感度的正型組成物。Examples of the photoacid generator include a quinonediazide compound, a phosphonium salt, a phosphonium salt, a diazonium salt, and a phosphonium salt. Among them, in view of exhibiting an excellent dissolution inhibiting effect and obtaining a composition having high sensitivity and a small film thickness, a quinonediazide compound is preferably used. Further, two or more photoacid generators may be contained. Thereby, the ratio of the dissolution rate of the exposed portion and the unexposed portion can be further increased, and a high-sensitivity positive composition can be obtained.

作為醌二疊氮化合物,可列舉:於多羥基化合物中醌二疊氮的磺酸進行酯鍵結而成者、於多胺基化合物中醌二疊氮的磺酸進行磺醯胺鍵結而成者、於多羥基多胺基化合物中醌二疊氮的磺酸進行酯鍵結及/或磺醯胺鍵結而成者等。藉由使用此種醌二疊氮化合物,可獲得對作為通常的紫外線的水銀燈的i射線(波長365 nm)、h射線(波長405 nm)、g射線(波長436 nm)感光的正型組成物。另外,該些多羥基化合物、多胺基化合物、多羥基多胺基化合物的所有官能基亦可未經醌二疊氮取代,但較佳為每一分子中兩個以上的官能基經醌二疊氮取代。 作為一例,例示下述化合物。 [化65] 於所述化合物中,Q整體的1%~10%可為氫原子,亦可為4%~6%為氫原子。The quinonediazide compound may be one in which a sulfonic acid of quinonediazide is ester-bonded to a polyhydroxy compound, and a sulfonic acid of quinonediazide in a polyamine compound is sulfonamide bonded. The sulfonic acid of the quinonediazide in the polyhydroxypolyamine compound is ester-bonded and/or sulfonamide-bonded. By using such a quinonediazide compound, a positive composition which is sensitive to i-rays (wavelength 365 nm), h-rays (wavelength 405 nm), and g-rays (wavelength 436 nm) which are ordinary ultraviolet light mercury lamps can be obtained. . In addition, all of the functional groups of the polyhydroxy compound, the polyamine compound, and the polyhydroxy polyamine compound may be substituted without quinonediazide, but it is preferred that two or more functional groups per molecule pass through Azide substitution. As an example, the following compounds are exemplified. [化65] In the compound, 1% to 10% of the total amount of Q may be a hydrogen atom, or 4% to 6% may be a hydrogen atom.

作為多羥基化合物,可列舉:Bis-Z、BisP-EZ、TekP-4HBPA、TrisP-HAP、TrisP-PA、TrisP-SA、TrisOCR-PA、BisOCHP-Z、BisP-MZ、BisP-PZ、BisP-IPZ、BisOCP-IPZ、BisP-CP、BisRS-2P、BisRS-3P、BisP-OCHP、亞甲基三-FR-CR、BisRS-26X、DML-MBPC、DML-MBOC、DML-OCHP、DML-PCHP、DML-PC、DML-PTBP、DML-34X、DML-EP、DML-POP、二羥甲基-BisOC-P、DML-PFP、DML-PSBP、DML-MTrisPC、TriML-P、TriML-35XL、TML-BP、TML-HQ、TML-pp-BPF、TML-BPA、TMOM-BP、HML-TPPHBA、HML-TPHAP(以上為商品名,本州化學工業製造)、BIR-OC、BIP-PC、BIR-PC、BIR-PTBP、BIR-PCHP、BIP-BIOC-F、4PC、BIR-BIPC-F、TEP-BIP-A、46DMOC、46DMOEP、TM-BIP-A(以上為商品名,旭有機材工業製造)、2,6-二甲氧基甲基-4-第三丁基苯酚、2,6-二甲氧基甲基-對甲酚、2,6-二乙醯氧基甲基-對甲酚、萘酚、四羥基二苯甲酮、五倍子酸甲酯、雙酚A、雙酚E、亞甲基雙酚、BisP-AP(商品名,本州化學工業製造)、酚醛清漆樹脂等,但並不限定於該些化合物。As the polyhydroxy compound, Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP- may be mentioned. IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylene tri-FR-CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP , DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, dimethylol-BisOC-P, DML-PFP, DML-PSBP, DML-MTrisPC, TriML-P, TriML-35XL, TML-BP, TML-HQ, TML-pp-BPF, TML-BPA, TMOM-BP, HML-TPPHBA, HML-TPHAP (above trade name, manufactured by Honshu Chemical Industry), BIR-OC, BIP-PC, BIR -PC, BIR-PTBP, BIR-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A, 46DMOC, 46DMOEP, TM-BIP-A (above, trade name, Asahi Organic Industry Manufactured), 2,6-dimethoxymethyl-4-tert-butylphenol, 2,6-dimethoxymethyl-p-cresol, 2,6-diethyloxymethyl-pair Cresol, naphthol, tetrahydroxybenzophenone, methyl gallate, bisphenol A, bisphenol E, methylene bisphenol, BisP-AP (trade name, manufactured by Honshu Chemical Industry), novolac Resin or the like, but is not limited to these compounds.

作為多胺基化合物,可列舉:1,4-伸苯基二胺、1,3-伸苯基二胺、4,4'-二胺基二苯基醚、4,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸、4,4'-二胺基二苯基硫醚等,但並不限定於該些化合物。Examples of the polyamine-based compound include 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4'-diaminodiphenyl ether, and 4,4'-diamino group. Diphenylmethane, 4,4'-diaminodiphenylanthracene, 4,4'-diaminodiphenyl sulfide, etc., but are not limited to these compounds.

另外,作為多羥基多胺基化合物,可列舉:2,2-雙(3-胺基-4-羥基苯基)六氟丙烷、3,3'-二羥基聯苯胺等,但並不限定於該些化合物。Further, examples of the polyhydroxy polyamine-based compound include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 3,3'-dihydroxybenzidine, but are not limited thereto. These compounds.

作為醌二疊氮化合物,可較佳地使用具有5-萘醌二疊氮磺醯基的化合物、具有4-萘醌二疊氮磺醯基的化合物的任一者。亦可使用於同一分子中具有該些基的兩者的化合物,亦可併用使用了不同的基的化合物。As the quinonediazide compound, any of a compound having a 5-naphthoquinonediazidesulfonyl group and a compound having a 4-naphthoquinonediazidesulfonyl group can be preferably used. A compound having both of these groups in the same molecule may also be used, and a compound having a different group may also be used in combination.

作為製造醌二疊氮化合物的方法,例如可列舉使5-萘醌二疊氮磺醯氯與苯酚化合物於三乙基胺存在下反應的方法。苯酚化合物的合成方法可列舉於酸性觸媒下使α-(羥基苯基)苯乙烯衍生物與多元酚化合物反應的方法等。As a method of producing the quinonediazide compound, for example, a method of reacting 5-naphthoquinonediazidesulfonium chloride with a phenol compound in the presence of triethylamine can be mentioned. The method for synthesizing the phenol compound includes a method of reacting an α-(hydroxyphenyl)styrene derivative with a polyhydric phenol compound under an acidic catalyst.

相對於含有雜環的聚合物前驅物100質量份,光酸產生劑的含量較佳為3質量份~40質量份。藉由將光酸產生劑的含量設為該範圍,可實現更高的感度化。進而亦可視需要而含有增感劑等。 光酸產生劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。The content of the photoacid generator is preferably from 3 parts by mass to 40 parts by mass based on 100 parts by mass of the polymer precursor containing a hetero ring. By setting the content of the photoacid generator to this range, higher sensitivity can be achieved. Further, a sensitizer or the like may be contained as needed. The photoacid generator may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<熱酸產生劑> 本發明中的組成物亦可包含熱酸產生劑。熱酸產生劑藉由加熱而產生酸,並促進含有雜環的聚合物前驅物的環化且進一步提升硬化膜的機械特性,除此以外亦具有促進以下化合物的交聯反應的效果,該化合物選自具有羥基甲基、烷氧基甲基或醯氧基甲基的化合物、環氧化合物、氧雜環丁烷化合物及苯并噁嗪化合物中的至少一種。<Thermal acid generator> The composition in the present invention may also contain a thermal acid generator. The thermal acid generator generates an acid by heating, promotes cyclization of the heterocyclic-containing polymer precursor and further enhances the mechanical properties of the cured film, and has an effect of promoting a crosslinking reaction of the following compound. It is at least one selected from the group consisting of a compound having a hydroxymethyl group, an alkoxymethyl group or a decyloxymethyl group, an epoxy compound, an oxetane compound, and a benzoxazine compound.

熱酸產生劑的熱分解起始溫度較佳為50℃~270℃,更佳為250℃以下。另外,若選擇在將組成物塗佈於基板後的乾燥(預烘烤:約70℃~140℃)時不產生酸、且在藉由其後的曝光、顯影而圖案化後的最終加熱(固化:約100℃~400℃)時產生酸者,則可抑制顯影時的感度降低,因此較佳。The thermal decomposition initiation temperature of the thermal acid generator is preferably from 50 ° C to 270 ° C, more preferably not more than 250 ° C. In addition, when drying (prebaking: about 70 ° C to 140 ° C) after the composition is applied to the substrate, the final heating after patterning by exposure and development (after no acid is generated) is selected ( When the acid is generated at a temperature of from about 100 ° C to about 400 ° C, the sensitivity at the time of development can be suppressed, which is preferable.

自熱酸產生劑產生的酸較佳為強酸,例如較佳為對甲苯磺酸、苯磺酸等芳基磺酸;甲磺酸、乙磺酸、丁磺酸等烷基磺酸;及三氟甲磺酸等鹵代烷基磺酸等。作為此種熱酸產生劑的例子,可列舉日本專利特開2013-072935號公報的段落號0055中記載者。The acid produced by the thermal acid generator is preferably a strong acid, for example, an arylsulfonic acid such as p-toluenesulfonic acid or benzenesulfonic acid; an alkylsulfonic acid such as methanesulfonic acid, ethanesulfonic acid or butanesulfonic acid; and A halogenated alkyl sulfonic acid such as fluoromethanesulfonic acid or the like. An example of such a thermal acid generator is described in paragraph 0055 of JP-A-2013-072935.

其中,就使硬化膜中的殘留少且不使硬化膜物性降低的觀點而言,更佳為產生碳數1~4的烷基磺酸、及碳數1~4的鹵代烷基磺酸者,較佳為甲磺酸(4-羥基苯基)二甲基鋶、甲磺酸(4-((甲氧基羰基)氧基)苯基)二甲基鋶、甲磺酸苄基(4-羥基苯基)甲基鋶、甲磺酸苄基(4-((甲氧基羰基)氧基)苯基)甲基鋶、甲磺酸(4-羥基苯基)甲基((2-甲基苯基)甲基)鋶、三氟甲磺酸(4-羥基苯基)二甲基鋶、三氟甲磺酸(4-((甲氧基羰基)氧基)苯基)二甲基鋶、三氟甲磺酸苄基(4-羥基苯基)甲基鋶、三氟甲磺酸苄基(4-((甲氧基羰基)氧基)苯基)甲基鋶、三氟甲磺酸(4-羥基苯基)甲基((2-甲基苯基)甲基)鋶、3-(5-(((丙基磺醯基)氧基)亞胺基)噻吩-2(5H)-亞基)-2-(鄰甲苯基)丙腈、2,2-雙(3-(甲烷磺醯基胺基)-4-羥基苯基)六氟丙烷。In the case where the residual amount in the cured film is small and the physical properties of the cured film are not lowered, it is more preferable to produce an alkylsulfonic acid having 1 to 4 carbon atoms and a halogenated alkylsulfonic acid having 1 to 4 carbon atoms. Preferred is (4-hydroxyphenyl)dimethylhydrazine methanesulfonate, (4-((methoxycarbonyl)oxy)phenyl)dimethylhydrazine methanesulfonate, benzyl methanesulfonate (4- Hydroxyphenyl)methylhydrazine, benzyl methanesulfonate (4-((methoxycarbonyl)oxy)phenyl)methylhydrazine, methanesulfonic acid (4-hydroxyphenyl)methyl ((2-A) Phenyl)methyl)anthracene, (4-hydroxyphenyl) dimethyl sulfonium trifluoromethanesulfonate, (4-((methoxycarbonyl)oxy)phenyl) dimethyl trifluoromethanesulfonate鋶, benzyl (4-hydroxyphenyl)methyl fluorene trifluoromethanesulfonate, benzyl (4-((methoxycarbonyl)oxy)phenyl)methyl fluorene trifluoromethanesulfonate, trifluoromethyl Sulfonic acid (4-hydroxyphenyl)methyl ((2-methylphenyl)methyl) fluorene, 3-(5-((propylsulfonyl)oxy)imino)thiophene-2 ( 5H)-Subunit)-2-(o-tolyl)propanenitrile, 2,2-bis(3-(methanesulfonylamino)-4-hydroxyphenyl)hexafluoropropane.

另外,日本專利特開2013-167742號公報的段落號0059中記載的化合物作為熱酸產生劑亦較佳。Further, the compound described in Paragraph No. 0059 of JP-A-2013-167742 is also preferable as a thermal acid generator.

當使用熱酸產生劑時,相對於含有雜環的聚合物前驅物100質量份,熱酸產生劑的含量較佳為0.01質量份以上,更佳為0.1質量份以上。藉由含有0.01質量份以上,交聯反應及含有雜環的聚合物前驅物的環化得以促進,因此可進一步提升硬化膜的機械特性及耐化學品性。另外,就硬化膜的電絕緣性的觀點而言,較佳為20質量份以下,更佳為15質量份以下,進而更佳為10質量份以下。 熱酸產生劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。When the thermal acid generator is used, the content of the thermal acid generator is preferably 0.01 parts by mass or more, and more preferably 0.1 parts by mass or more, based on 100 parts by mass of the polymer precursor containing a hetero ring. By containing 0.01 part by mass or more, the crosslinking reaction and the cyclization of the polymer precursor containing a hetero ring are promoted, so that the mechanical properties and chemical resistance of the cured film can be further improved. In addition, from the viewpoint of electrical insulation of the cured film, it is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, and still more preferably 10 parts by mass or less. The thermal acid generator may be used alone or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<熱自由基聚合起始劑> 本發明中的組成物亦可包含熱自由基聚合起始劑。作為熱自由基聚合起始劑,可使用公知的熱自由基聚合起始劑。 熱自由基聚合起始劑為藉由熱的能量而產生自由基,並使聚合性化合物的聚合反應開始或加以促進的化合物。藉由添加熱自由基聚合起始劑,當使含有雜環的聚合物前驅物的環化反應進行時,可使聚合性化合物的聚合反應進行。另外,當含有雜環的聚合物前驅物含有乙烯性不飽和鍵時,亦可使含有雜環的聚合物前驅物的環化與含有雜環的聚合物前驅物的聚合反應一同進行,因此可達成更高的耐熱化。 作為熱自由基聚合起始劑,可列舉:芳香族酮類、鎓鹽化合物、過氧化物、硫化合物、六芳基聯咪唑化合物、酮肟酯化合物、硼酸鹽化合物、吖嗪鎓化合物、茂金屬化合物、活性酯化合物、具有碳鹵素鍵的化合物、偶氮系化合物等。其中,更佳為過氧化物或偶氮系化合物,特佳為過氧化物。 本發明中使用的熱自由基聚合起始劑的10小時半衰期溫度較佳為90℃~130℃,更佳為100℃~120℃。 具體而言,可列舉日本專利特開2008-63554號公報的段落號0074~段落號0118中所記載的化合物。 市售品中,可適宜地使用帕比優提(Perbutyl)Z及帕庫美(Percumyl)D(日油(股份)製造)。<Thermal Radical Polymerization Starter> The composition in the present invention may also contain a thermal radical polymerization initiator. As the thermal radical polymerization initiator, a known thermal radical polymerization initiator can be used. The thermal radical polymerization initiator is a compound which generates radicals by thermal energy and starts or promotes polymerization of a polymerizable compound. When the cyclization reaction of the heterocyclic-containing polymer precursor is carried out by adding a thermal radical polymerization initiator, the polymerization reaction of the polymerizable compound can be carried out. Further, when the polymer precursor containing a hetero ring contains an ethylenically unsaturated bond, the cyclization of the heterocyclic-containing polymer precursor can also be carried out together with the polymerization reaction of the heterocyclic-containing polymer precursor. Achieve higher heat resistance. Examples of the thermal radical polymerization initiator include aromatic ketones, phosphonium salt compounds, peroxides, sulfur compounds, hexaarylbiimidazole compounds, ketoxime ester compounds, borate compounds, oxazine compounds, and porphyrin. a metal compound, an active ester compound, a compound having a carbon halogen bond, an azo compound, or the like. Among them, a peroxide or an azo compound is more preferred, and a peroxide is particularly preferred. The 10-hour half-life temperature of the thermal radical polymerization initiator used in the present invention is preferably from 90 ° C to 130 ° C, more preferably from 100 ° C to 120 ° C. Specifically, the compound described in Paragraph No. 0074 to Paragraph No. 0118 of JP-A-2008-63554 is mentioned. Among the commercially available products, Perbutyl Z and Percumyl D (manufactured by Nippon Oil Co., Ltd.) can be suitably used.

當組成物含有熱自由基聚合起始劑時,相對於組成物的總固體成分,熱自由基聚合起始劑的含量較佳為0.1質量%~50質量%,更佳為0.1質量%~30質量%,特佳為0.1質量%~20質量%。另外,相對於聚合性化合物100質量份,較佳為包含熱自由基聚合起始劑0.1質量份~50質量份,更佳為包含0.5質量份~30質量份。根據該形態,容易形成耐熱性更優異的硬化膜。 熱自由基聚合起始劑可僅為一種,亦可為兩種以上。當熱自由基聚合起始劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a thermal radical polymerization initiator, the content of the thermal radical polymerization initiator is preferably from 0.1% by mass to 50% by mass, more preferably from 0.1% by mass to 30%, based on the total solid content of the composition. The mass% is particularly preferably from 0.1% by mass to 20% by mass. In addition, it is preferably contained in an amount of from 0.1 part by mass to 50 parts by mass, more preferably from 0.5 part by mass to 30 parts by mass, based on 100 parts by mass of the polymerizable compound. According to this aspect, it is easy to form a cured film which is more excellent in heat resistance. The thermal radical polymerization initiator may be used alone or in combination of two or more. When the number of the thermal radical polymerization initiators is two or more, it is preferred that the total is in the above range.

<防腐蝕劑> 於本發明中的組成物中,較佳為添加防腐蝕劑。防腐蝕劑是以防止離子自金屬配線中流出為目的而添加,作為化合物,例如可使用:日本專利特開2013-15701號公報的段落號0094中記載的防鏽劑、日本專利特開2009-283711號公報的段落號0073~段落號0076中記載的化合物、日本專利特開2011-59656號公報的段落號0052中記載的化合物、日本專利特開2012-194520號公報的段落號0114、段落號0116及段落號0118中記載的化合物等。其中,可較佳地使用具有三唑環的化合物或具有四唑環的化合物,更佳為1,2,4-三唑、1,2,3-苯并三唑、5-甲基-1H-苯并三唑、1H-四唑、5-甲基-1H-四唑,最佳為1H-四唑。 當使用防腐蝕劑時,相對於含有雜環的聚合物前驅物100質量份,防腐蝕劑的含量較佳為0.1質量份~10質量份的範圍,更佳為0.2質量份~5質量份的範圍。 防腐蝕劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。<Anticorrosive Agent> In the composition of the present invention, it is preferred to add an anticorrosive agent. The anticorrosive agent is added for the purpose of preventing the ions from flowing out of the metal wiring. For example, the rust preventive agent described in paragraph 0094 of JP-A-2013-15701, Japanese Patent Laid-Open No. 2009-283711 The compound described in Paragraph No. 0073 to Paragraph No. 0076 of the Japanese Patent Publication No. JP-A-2011-59656, Paragraph No. 0052, Paragraph No. 0114, Paragraph No. 0116 of JP-A-2012-194520 And the compound described in Paragraph No. 0118. Among them, a compound having a triazole ring or a compound having a tetrazole ring can be preferably used, more preferably 1,2,4-triazole, 1,2,3-benzotriazole, 5-methyl-1H. - benzotriazole, 1H-tetrazole, 5-methyl-1H-tetrazole, most preferably 1H-tetrazole. When the anticorrosive agent is used, the content of the anticorrosive agent is preferably in the range of 0.1 part by mass to 10 parts by mass, more preferably 0.2 part by mass to 5 parts by mass, based on 100 parts by mass of the polymer precursor containing the hetero ring. The anticorrosive agent may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<金屬接著性改良劑> 本發明中的組成物較佳為包含用以提升與電極或配線等中所使用的金屬材料的接著性的金屬接著性改良劑。作為金屬接著性改良劑的例子,可列舉日本專利特開2014-186186號公報的段落號0046~段落號0049、或日本專利特開2013-072935號公報的段落號0032~段落號0043中記載的硫醚系化合物。另外,作為金屬接著性改良劑,亦可例示下述化合物。 [化66]當使用金屬接著性改良劑時,相對於聚醯亞胺前驅物100質量份,金屬接著性改良劑的含量較佳為0.1質量份~30質量份的範圍,更佳為0.5質量份~15質量份的範圍。藉由設為0.1質量份以上,熱硬化後的膜與金屬的接著性變得良好,藉由設為30質量份以下,硬化後的膜的耐熱性、機械特性變得良好。 金屬接著性改良劑可僅為一種,亦可為兩種以上。當使用兩種以上時,較佳為其合計為所述範圍。<Metal adhesion improver> The composition in the present invention preferably contains a metal adhesion improver for improving adhesion to a metal material used for an electrode or a wiring. Examples of the metal adhesion improver include those described in paragraphs 0046 to 0049 of JP-A-2014-186186, and paragraphs 0032 to 0043 of JP-A-2013-072935. a thioether compound. Further, as the metal adhesion improver, the following compounds can also be exemplified. [化66] When a metal adhesion improver is used, the content of the metal adhesion improver is preferably from 0.1 part by mass to 30 parts by mass, more preferably from 0.5 part by mass to 15 parts by mass, per 100 parts by mass of the polyimide intermediate precursor. The scope of the share. By setting it as 0.1 mass part or more, the adhesiveness of the film after thermosetting and metal is favorable, and it is set as 30 mass parts or less, and the heat resistance and mechanical characteristics of the film after hardening are favorable. The metal adhesion improver may be used alone or in combination of two or more. When two or more types are used, it is preferable to add up to the above range.

<矽烷偶合劑> 就提升與基板的接著性的方面而言,本發明中的組成物較佳為包含矽烷偶合劑。作為矽烷偶合劑的例子,可列舉:日本專利特開2014-191002號公報的段落號0062~段落號0073中記載的化合物、國際公開WO2011/080992A1號公報的段落號0063~段落號0071中記載的化合物、日本專利特開2014-191252號公報的段落號0060~段落號0061中記載的化合物、日本專利特開2014-41264號公報的段落號0045~段落號0052中記載的化合物、國際公開WO2014/097594號公報的段落號0055中記載的化合物。另外,如日本專利特開2011-128358號公報的段落號0050~段落號0058中所記載般使用兩種以上的不同的矽烷偶合劑亦較佳。 當使用矽烷偶合劑時,相對於含有雜環的聚合物前驅物100質量份,矽烷偶合劑的含量較佳為0.1質量份~20質量份的範圍,更佳為1質量份~10質量份的範圍。若為0.1質量份以上,則可賦予與基板的更充分的密接性,若為20質量份以下,則可進一步抑制於室溫保存時黏度上升等問題。 矽烷偶合劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。<Centane Coupling Agent> The composition in the present invention preferably contains a decane coupling agent in terms of improving the adhesion to the substrate. Examples of the decane coupling agent include those described in paragraphs 0062 to 0063 of JP-A-2014-191002, and paragraphs 0063 to 0071 of WO2011/080992A1. The compound described in Paragraph No. 0060 to Paragraph 0061 of JP-A-2014-191252, and the compound described in paragraph No. 0045 to paragraph 0052 of JP-A-2014-41264, International Publication WO2014/ The compound described in Paragraph No. 0055 of 097594. Further, it is also preferred to use two or more different decane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. When a decane coupling agent is used, the content of the decane coupling agent is preferably in the range of 0.1 part by mass to 20 parts by mass, more preferably 1 part by mass to 10 parts by mass, per 100 parts by mass of the polymer precursor containing the hetero ring. range. When it is 0.1 part by mass or more, it is possible to provide more sufficient adhesion to the substrate, and if it is 20 parts by mass or less, it is possible to further suppress problems such as an increase in viscosity at the time of storage at room temperature. The decane coupling agent may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<溶解促進劑> 當本發明中的組成物為使用鹼性顯影液的正型時,就感度提升的觀點而言,較佳為添加溶解促進劑(促進溶解性的化合物)。作為溶解促進劑,可列舉:低分子酚類(例如Bis-Z、TekP-4HBPA、TrisP-HAP、TrisP-PA、BisRS-2P、BisRS-3P(以上為商品名,本州化學工業製造),BIR-PC、BIR-PTBP、BIR-BIPC-F(以上為商品名,旭有機材工業製造),日本專利特開2013-152381號公報的段落號0056~段落號0062中記載的酚類)或芳基磺醯胺衍生物(例如日本專利特開2011-164454號公報的段落號0058中記載的化合物)。 當使用溶解促進劑時,相對於含有雜環的聚合物前驅物100質量份,溶解促進劑的含量較佳為0.1質量份~20質量份的範圍,更佳為1質量份~10質量份的範圍。 溶解促進劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。<Solution accelerator> When the composition in the present invention is a positive type using an alkaline developer, it is preferred to add a dissolution promoter (a compound which promotes solubility) from the viewpoint of improving the sensitivity. Examples of the dissolution promoter include low molecular weight phenols (for example, Bis-Z, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisRS-2P, and BisRS-3P (above, trade name, manufactured by Honshu Chemical Industry Co., Ltd.), BIR - PC, BIR-PTBP, BIR-BIPC-F (the above is a trade name, manufactured by Asahi Organic Materials Co., Ltd.), and the phenols described in paragraphs 0056 to 0062 of JP-A-2013-152381 A sulfoximine derivative (for example, a compound described in Paragraph No. 0059 of JP-A-2011-164454). When a dissolution promoter is used, the content of the dissolution promoter is preferably in the range of 0.1 part by mass to 20 parts by mass, more preferably 1 part by mass to 10 parts by mass, per 100 parts by mass of the polymer precursor containing a hetero ring. range. The dissolution promoter may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<溶解阻礙劑> 當本發明中的組成物為使用鹼性顯影液的正型時,為了調整對於鹼性顯影液的溶解性,可含有溶解阻礙劑(阻礙溶解性的化合物)。作為此種化合物,較佳為鎓鹽、二芳基化合物及四烷基銨鹽。 作為鎓鹽,可列舉:二芳基錪鹽等錪鹽、三芳基鋶鹽等鋶鹽、鏻鹽、芳基重氮鎓鹽等重氮鎓鹽等。 作為二芳基化合物,可列舉二芳基脲、二芳基碸、二芳基酮、二芳基醚、二芳基丙烷、二芳基六氟丙烷等兩個芳基經由鍵結基鍵結而成者,作為所述芳基,較佳為苯基。 作為四烷基銨鹽,可列舉所述烷基為甲基、乙基等的鹵化四烷基銨。<Dissolution inhibitor> When the composition in the present invention is a positive type using an alkaline developer, a dissolution inhibitor (a compound which inhibits solubility) may be contained in order to adjust the solubility to the alkaline developer. As such a compound, a phosphonium salt, a diaryl compound, and a tetraalkylammonium salt are preferable. Examples of the onium salt include a phosphonium salt such as a sulfonium salt such as a diarylsulfonium salt or a sulfonium salt such as a phosphonium salt such as a triarylsulfonium salt or a phosphonium salt or an aryldiazonium salt. As the diaryl compound, two aryl groups such as a diaryl urea, a diaryl hydrazine, a diaryl ketone, a diaryl ether, a diaryl propane, and a diaryl hexafluoropropane are bonded via a bonding group. As the aryl group, a phenyl group is preferred. The tetraalkylammonium salt may, for example, be a halogenated tetraalkylammonium group in which the alkyl group is a methyl group or an ethyl group.

作為該些中的示出良好的溶解阻礙效果者,可列舉二芳基錪鹽、二芳基脲、二芳基碸、鹵化四甲基銨等,作為二芳基脲,可列舉二苯基脲、二甲基二苯基脲等,作為鹵化四甲基銨,可列舉氯化四甲基銨、溴化四甲基銨、碘化四甲基銨等。Examples of the good dissolution inhibitory effect in the above include a diarylsulfonium salt, a diaryl urea, a diarylsulfonium, a tetramethylammonium halide, and the like. Examples of the diaryl urea include a diphenyl group. Examples of the halogenated tetramethylammonium such as urea or dimethyldiphenylurea include tetramethylammonium chloride, tetramethylammonium bromide, and tetramethylammonium iodide.

其中,較佳為由通式(Inh)所表示的二芳基錪鹽。 [化67](Inh)   (式中,X- 表示抗衡陰離子,R7 及R8 分別獨立地表示一價的有機基,a及b分別獨立地為0~5的整數)Among them, a diarylsulfonium salt represented by the formula (Inh) is preferred. [67] (Inh) (wherein, X - represents a counter anion, and R 7 and R 8 each independently represent a monovalent organic group, and a and b are each independently an integer of 0 to 5)

作為抗衡陰離子X- ,可列舉:硝酸根離子、四氟化硼離子、過氯酸根離子、三氟甲磺酸根離子、對甲苯磺酸根離子、硫氰酸根離子、氯離子、溴離子、碘離子等。Examples of the counter anion X - include a nitrate ion, a boron tetrafluoride ion, a perchlorate ion, a triflate ion, a p-toluenesulfonate ion, a thiocyanate ion, a chloride ion, a bromide ion, and an iodide ion. Wait.

作為二芳基錪鹽,例如可使用:二苯基錪硝酸鹽、雙(對第三丁基苯基)錪硝酸鹽、二苯基錪三氟甲磺酸鹽、雙(對第三丁基苯基)錪三氟甲磺酸鹽、二苯基錪溴酸鹽、二苯基錪氯酸鹽、二苯基錪碘酸鹽、二苯基錪-8-苯胺基萘-1-磺酸鹽等。 該些中,二苯基錪硝酸鹽、二苯基錪三氟甲磺酸鹽及二苯基錪-8-苯胺基萘-1-磺酸鹽的效果高而可作為較佳者列舉。As the diarylsulfonium salt, for example, diphenylphosphonium nitrate, bis(p-tert-butylphenyl)phosphonium nitrate, diphenylsulfonium trifluoromethanesulfonate, and bis(p-tert-butyl) can be used. Phenyl)indole trifluoromethanesulfonate, diphenylphosphonium bromide, diphenylphosphonium chlorate, diphenylphosphonium iodate, diphenylphosphonium-8-anilinonaphthalene-1-sulfonic acid Salt and so on. Among these, diphenylphosphonium nitrate, diphenylsulfonium trifluoromethanesulfonate, and diphenylphosphonium-8-anilinonaphthalene-1-sulfonate have high effects and can be preferably enumerated.

當含有溶解阻礙劑時,就感度與顯影時間容許範圍的方面而言,相對於含有雜環的聚合物前驅物100質量份,溶解阻礙劑的含量較佳為0.1質量份~20質量份,更佳為0.1質量份~15質量份,進而更佳為0.5質量份~10質量份。 溶解阻礙劑可僅使用一種,亦可使用兩種以上。當使用兩種以上時,較佳為合計量成為所述範圍。When the dissolution inhibitor is contained, the content of the dissolution inhibitor is preferably from 0.1 part by mass to 20 parts by mass per 100 parts by mass of the polymer precursor containing a hetero ring, from the viewpoint of the sensitivity and the allowable range of the development time. It is preferably from 0.1 part by mass to 15 parts by mass, more preferably from 0.5 part by mass to 10 parts by mass. The dissolution inhibitor may be used singly or in combination of two or more. When two or more types are used, it is preferable that the total amount is the above range.

<增感色素> 本發明中的組成物亦可包含增感色素。增感色素吸收特定的活性放射線而成為電子激發狀態。成為電子激發狀態的增感色素與胺產生劑、熱自由基聚合起始劑、光自由基聚合起始劑等接觸,而引起電子移動、能量移動、發熱等作用。藉此,胺產生劑、熱自由基聚合起始劑、光自由基聚合起始劑發生化學變化而分解,並生成自由基、酸或鹼。<Sensitizing dye> The composition in the present invention may also contain a sensitizing dye. The sensitizing dye absorbs specific active radiation and becomes an electronically excited state. The sensitizing dye which is in an electronically excited state is brought into contact with an amine generator, a thermal radical polymerization initiator, a photoradical polymerization initiator, and the like, and causes an action of electron movement, energy movement, and heat generation. Thereby, the amine generator, the thermal radical polymerization initiator, and the photoradical polymerization initiator are chemically changed to be decomposed, and a radical, an acid or a base is generated.

作為較佳的增感色素的例子,可列舉屬於以下的化合物類、且於300 nm~450 nm區域中具有最大吸收波長者。例如可列舉:多核芳香族類(例如菲、蒽、芘、苝、三伸苯、9,10-二烷氧基蒽)、呫噸類(例如螢光素、曙紅、紅螢素、若丹明B、孟加拉玫瑰紅)、硫雜蒽酮類(例如2,4-二乙基硫雜蒽酮)、花青類(例如硫雜羰花青、氧雜羰花青)、部花青類(例如部花青、羰部花青)、噻嗪類(例如噻嚀、亞甲藍、甲苯胺藍)、吖啶類(例如吖啶橙、氯黃素、吖啶黃素)、蒽醌類(例如蒽醌)、方酸內鎓鹽類(例如方酸內鎓鹽)、香豆素(coumarin)類(例如7-二乙基胺基-4-甲基香豆素)、苯乙烯基苯類、二苯乙烯基苯類、咔唑類等。Examples of preferred sensitizing dyes include those belonging to the following compounds and having a maximum absorption wavelength in a region of 300 nm to 450 nm. For example, polynuclear aromatics (for example, phenanthrene, anthracene, anthracene, anthracene, triphenylene, 9,10-dialkyloxyanthracene), xanthenes (for example, luciferin, eosin, erythromycin, and if Danming B, Bengal Rose Red), thioxanthone (such as 2,4-diethylthiazinone), cyanine (such as thiacarbocyanine, oxacarbocyanine), merocyanine Classes (eg, merocyanine, carbocyanine), thiazides (eg, thiazide, methylene blue, toluidine blue), acridines (eg, acridine orange, chloroflavon, acridine flavin), 蒽Terpenoids (eg, hydrazine), squaric acid guanidine salts (eg, squaric acid ylide), coumarin (eg 7-diethylamino-4-methylcoumarin), benzene Vinyl benzenes, distyryl benzenes, oxazoles, and the like.

其中,於本發明中,就起始效率的觀點而言,較佳為使用多核芳香族類(例如菲、蒽、芘、苝、三伸苯)、硫雜蒽酮類、二苯乙烯基苯類、苯乙烯基苯類,更佳為使用具有蒽骨架的化合物。作為特佳的具體的化合物,可列舉9,10-二乙氧基蒽、9,10-二丁氧基蒽等。Among them, in the present invention, from the viewpoint of initial efficiency, it is preferred to use a polynuclear aromatic group (for example, phenanthrene, anthracene, anthracene, anthracene, triphenylene), thioxanthone or distyrylbenzene. The class, styrylbenzene, more preferably a compound having an anthracene skeleton. Specific examples of the specific compound include 9,10-diethoxyanthracene, 9,10-dibutoxyanthracene and the like.

當組成物包含增感色素時,相對於組成物的總固體成分,增感色素的含量較佳為0.01質量%~20質量%,更佳為0.1質量%~15質量%,進而更佳為0.5質量%~10質量%。增感色素可單獨使用一種,亦可併用兩種以上。When the composition contains a sensitizing dye, the content of the sensitizing dye is preferably from 0.01% by mass to 20% by mass, more preferably from 0.1% by mass to 15% by mass, even more preferably 0.5% based on the total solid content of the composition. Mass% to 10% by mass. The sensitizing dye may be used alone or in combination of two or more.

<鏈轉移劑> 本發明中的組成物亦可含有鏈轉移劑。鏈轉移劑例如於高分子辭典第三版(高分子學會編,2005年)683頁~684頁中有定義。作為鏈轉移劑,例如可使用分子內具有SH、PH、SiH、GeH的化合物群組。該些鏈轉移劑對低活性的自由基種提供氫,而生成自由基,或者被氧化後,進行脫質子,藉此可生成自由基。尤其,可較佳地使用硫醇化合物(例如2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基苯并噁唑類、3-巰基三唑類、5-巰基四唑類等)。<Chain Transfer Agent> The composition in the present invention may also contain a chain transfer agent. The chain transfer agent is defined, for example, in the third edition of the Polymer Dictionary (edited by the Society of Polymers, 2005) on pages 683 to 684. As the chain transfer agent, for example, a group of compounds having SH, PH, SiH, or GeH in the molecule can be used. The chain transfer agents provide hydrogen to the low-activity radical species to form free radicals, or are oxidized and then deprotonated, thereby generating free radicals. In particular, a thiol compound (for example, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, 3-mercaptotriazole, 5-mercaptotetrazole, or 5-mercaptotetrazole may be preferably used. Wait).

當組成物含有鏈轉移劑時,相對於組成物的總固體成分100質量份,鏈轉移劑的含量較佳為0.01質量份~20質量份,更佳為1質量份~10質量份,進而更佳為1質量份~5質量份。 鏈轉移劑可僅為一種,亦可為兩種以上。當鏈轉移劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a chain transfer agent, the content of the chain transfer agent is preferably from 0.01 part by mass to 20 parts by mass, more preferably from 1 part by mass to 10 parts by mass, based on 100 parts by mass of the total solid content of the composition. It is preferably 1 part by mass to 5 parts by mass. The chain transfer agent may be used alone or in combination of two or more. When the chain transfer agent is two or more kinds, it is preferred that the total amount is the above range.

<聚合抑制劑> 為了於製造過程中或保存過程中,防止含有雜環的聚合物前驅物及自由基聚合性化合物的不需要的熱聚合,本發明中的組成物較佳為包含少量的聚合抑制劑。 作為聚合抑制劑,例如可適宜地列舉:對苯二酚、對甲氧基苯酚、二-第三丁基-對甲酚、五倍子酚、對第三丁基兒茶酚、苯醌、4,4'-硫代雙(3-甲基-6-第三丁基苯酚)、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥基胺鋁鹽、啡噻嗪、N-亞硝基二苯基胺、N-苯基萘基胺、伸乙二胺四乙酸、1,2-環己烷二胺四乙酸、二醇醚二胺四乙酸、2,6-二-第三丁基-對甲基苯酚、5-亞硝基-8-羥基喹啉、1-亞硝基-2-萘酚、2-亞硝基-1-萘酚、2-亞硝基-5-(N-乙基-N-磺丙基胺基)苯酚、N-亞硝基-N-(1-萘基)羥基胺銨鹽、雙(4-羥基-3,5-第三丁基)苯基甲烷。 當組成物含有聚合抑制劑時,相對於組成物的總固體成分,聚合抑制劑的含量較佳為0.01質量%~5質量%。 聚合抑制劑可僅為一種,亦可為兩種以上。當聚合抑制劑為兩種以上時,較佳為其合計為所述範圍。<Polymerization inhibitor> In order to prevent unnecessary thermal polymerization of a heterocyclic-containing polymer precursor and a radical polymerizable compound during or during the production process, the composition of the present invention preferably contains a small amount of polymerization. Inhibitor. As the polymerization inhibitor, for example, hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, gallic phenol, p-tert-butylcatechol, benzoquinone, 4 can be suitably cited. 4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl-6-tert-butylphenol), N-nitroso -N-phenylhydroxylamine aluminum salt, phenothiazine, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid , glycol ether diamine tetraacetic acid, 2,6-di-t-butyl-p-methylphenol, 5-nitroso-8-hydroxyquinoline, 1-nitroso-2-naphthol, 2- Nitroso-1-naphthol, 2-nitroso-5-(N-ethyl-N-sulfopropylamino)phenol, N-nitroso-N-(1-naphthyl)hydroxyl ammonium Salt, bis(4-hydroxy-3,5-t-butyl)phenylmethane. When the composition contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably from 0.01% by mass to 5% by mass based on the total solid content of the composition. The polymerization inhibitor may be used alone or in combination of two or more. When the polymerization inhibitor is two or more kinds, it is preferred that the total is in the above range.

<界面活性劑> 於本發明中的組成物中,就進一步提升塗佈性的觀點而言,亦可添加各種界面活性劑。作為界面活性劑,可使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界面活性劑等各種界面活性劑。 尤其,藉由包含氟系界面活性劑,作為塗佈液來製備時的液體特性(尤其是流動性)進一步提升,因此可進一步改善塗佈厚度的均一性或省液性。 當使用包含氟系界面活性劑的塗佈液來形成膜時,使被塗佈面與塗佈液的界面張力下降,藉此對於被塗佈面的潤濕性得到改善,且對於被塗佈面的塗佈性提升。因此,就即便於以少量的液量形成幾μm左右的薄膜的情況下,亦可更適宜地進行厚度不均小的厚度均一的膜形成的觀點而言有效。<Interacting Agent> In the composition of the present invention, various surfactants may be added from the viewpoint of further improving coatability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and an anthrone-based surfactant can be used. In particular, by including a fluorine-based surfactant, the liquid properties (especially fluidity) at the time of preparation as a coating liquid are further improved, so that the uniformity of the coating thickness or the liquid-saving property can be further improved. When a film is formed using a coating liquid containing a fluorine-based surfactant, the interfacial tension between the surface to be coated and the coating liquid is lowered, whereby the wettability to the surface to be coated is improved, and the coating is applied. The coating properties of the surface are improved. Therefore, even when a film having a thickness of about several μm is formed with a small amount of liquid, it is effective to form a film having a uniform thickness with a small thickness unevenness.

氟系界面活性劑的氟含有率適宜的是3質量%~40質量%,更佳為5質量%~30質量%,特佳為7質量%~25質量%。氟含有率為該範圍內的氟系界面活性劑就塗佈膜的厚度的均一性或省液性的方面而言有效,溶解性亦良好。 作為氟系界面活性劑,例如可列舉:美佳法(Megafac)F171、美佳法(Megafac)F172、美佳法(Megafac)F173、美佳法(Megafac)F176、美佳法(Megafac)F177、美佳法(Megafac)F141、美佳法(Megafac)F142、美佳法(Megafac)F143、美佳法(Megafac)F144、美佳法(Megafac)R30、美佳法(Megafac)F437、美佳法(Megafac)F475、美佳法(Megafac)F479、美佳法(Megafac)F482、美佳法(Megafac)F554、美佳法(Megafac)F780、美佳法(Megafac)F781(以上,迪愛生(DIC)(股份)製造),弗洛德(Fluorad)FC430、弗洛德(Fluorad)FC431、弗洛德(Fluorad)FC171(以上,住友3M(Sumitomo 3M)(股份)製造),沙福隆(Surflon)S-382、沙福隆(Surflon)SC-101、沙福隆(Surflon)SC-103、沙福隆(Surflon)SC-104、沙福隆(Surflon)SC-105、沙福隆(Surflon)SC1068、沙福隆(Surflon)SC-381、沙福隆(Surflon)SC-383、沙福隆(Surflon)S393、沙福隆(Surflon)KH-40(以上,旭硝子(股份)製造),PF636、PF656、PF6320、PF6520、PF7002(歐諾法(OMNOVA)公司製造)等。 作為氟系界面活性劑,亦可使用嵌段聚合物,作為具體例,例如可列舉日本專利特開2011-89090號公報中所記載的化合物。 另外,亦可例示下述化合物作為本發明中所使用的氟系界面活性劑。 [化68]所述化合物的重量平均分子量例如為14,000。The fluorine content of the fluorine-based surfactant is suitably from 3% by mass to 40% by mass, more preferably from 5% by mass to 30% by mass, even more preferably from 7% by mass to 25% by mass. The fluorine-containing surfactant having a fluorine content in this range is effective in terms of the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility is also good. Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, and Megafac. F141, Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, Megafac F475, Megafac F479, Megafac F482, Megafac F554, Megafac F780, Megafac F781 (above, DiCai (DIC) (share) manufacturing), Fluorad FC430 , Fluorad FC431, Fluorad FC171 (above, Sumitomo 3M (share)), Surflon S-382, Surflon SC-101 , Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068, Surflon SC-381, sand Surflon SC-383, Sha Fulong (Su Rflon) S393, Surfon KH-40 (above, manufactured by Asahi Glass Co., Ltd.), PF636, PF656, PF6320, PF6520, PF7002 (manufactured by OMNOVA). As the fluorine-based surfactant, a block polymer can also be used. Specific examples thereof include a compound described in JP-A-2011-89090. Further, the following compounds can also be exemplified as the fluorine-based surfactant used in the present invention. [化68] The weight average molecular weight of the compound is, for example, 14,000.

作為非離子系界面活性劑,具體而言,可列舉:甘油、三羥甲基丙烷、三羥甲基乙烷以及該些的乙氧基化物及丙氧基化物(例如甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯油基醚、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、脫水山梨糖醇脂肪酸酯(巴斯夫公司製造的普盧蘭尼克(Pluronic)L10、普盧蘭尼克(Pluronic)L31、普盧蘭尼克(Pluronic)L61、普盧蘭尼克(Pluronic)L62、普盧蘭尼克(Pluronic)10R5、普盧蘭尼克(Pluronic)17R2、普盧蘭尼克(Pluronic)25R2,泰羅尼克(Tetronic)304、泰羅尼克(Tetronic)701、泰羅尼克(Tetronic)704、泰羅尼克(Tetronic)901、泰羅尼克(Tetronic)904、泰羅尼克(Tetronic)150R1)、索努帕斯(Solsperse)20000(日本路博潤(Lubrizol)(股份))等。另外,亦可使用竹本油脂(股份)製造的皮傲寧(Pionin)D-6112-W、和光純藥工業公司製造的NCW-101、NCW-1001、NCW-1002。Specific examples of the nonionic surfactant include glycerin, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, Glycerol ethoxylate, etc., polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonylphenyl ether, polyethyl b Diol dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10 manufactured by BASF, Pluronic L31, Pullul Pluronic L61, Pluronic L62, Pluronic 10R5, Pluronic 17R2, Pluronic 25R2, Tetronic 304, Tyrone Tetronic 701, Tetronic 704, Tetronic 901, Tetronic 904, Tetronic 150R1), Solsperse 20000 (Lubrizol, Japan) ) (shares) Wait. In addition, Pionin D-6112-W manufactured by Takeshi Oil Co., Ltd., and NCW-101, NCW-1001, and NCW-1002 manufactured by Wako Pure Chemical Industries, Ltd. can also be used.

作為陽離子系界面活性劑,具體而言,可列舉:酞菁衍生物(商品名:埃夫卡(EFKA)-745,森下產業(股份)製造),有機矽氧烷聚合物KP341(信越化學工業(股份)製造),(甲基)丙烯酸系(共)聚合物珀利弗洛(Polyflow)No.75、珀利弗洛(Polyflow)No.90、珀利弗洛(Polyflow)No.95(共榮社化學(股份)製造),W001(裕商(股份)製造)等。Specific examples of the cation-based surfactant include a phthalocyanine derivative (trade name: Efka (EFKA)-745, manufactured by Morishita Industry Co., Ltd.), and an organic siloxane polymer KP341 (Shin-Etsu Chemical Industry) (Made) manufacturing), (meth)acrylic (co)polymer Polyflow No. 75, Polyflow No. 90, Polyflow No. 95 ( Gongrongshe Chemical (share) manufacturing), W001 (Yu Shang (share) manufacturing) and so on.

作為陰離子系界面活性劑,具體而言,可列舉:W004、W005、W017(裕商(股份)製造)等。Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusho Co., Ltd.).

作為矽酮系界面活性劑,例如可列舉:東麗·道康寧(股份)製造的「東麗矽酮(Toray Silicone)DC3PA」、「東麗矽酮(Toray Silicone)SH7PA」、「東麗矽酮(Toray Silicone)DC11PA」、「東麗矽酮(Toray Silicone)SH21PA」、「東麗矽酮(Toray Silicone)SH28PA」、「東麗矽酮(Toray Silicone)SH29PA」、「東麗矽酮(Toray Silicone)SH30PA」、「東麗矽酮(Toray Silicone)SH8400」,邁圖高新材料(Momentive Performance Materials)公司製造的「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、「TSF-4452」,信越矽利光(Shinetsu silicone)股份有限公司製造的「KP341」、「KF6001」、「KF6002」,畢克化學(BYK Chemie)公司製造的「BYK307」、「BYK323」、「BYK330」等。Examples of the fluorenone-based surfactant include Toray Silicone DC3PA, Toray Silicone SH7PA, and Toray ketone manufactured by Toray Dow Corning Co., Ltd. (Toray Silicone) DC11PA", "Toray Silicone SH21PA", "Toray Silicone SH28PA", "Toray Silicone SH29PA", "Toray Ketone (Toray) Silicone) SH30PA", "Toray Silicone SH8400", "TSF-4440", "TSF-4300", "TSF-4445", "TSF-" manufactured by Momentive Performance Materials 4460", "TSF-4452", "KP341", "KF6001", "KF6002" manufactured by Shintosu Silicon Co., Ltd., "BYK307" and "BYK323" manufactured by BYK Chemie , "BYK330" and so on.

當組成物含有界面活性劑時,相對於組成物的總固體成分,界面活性劑的含量較佳為0.001質量%~2.0質量%,更佳為0.005質量%~1.0質量%。 界面活性劑可僅為一種,亦可為兩種以上。當界面活性劑為兩種以上時,較佳為其合計為所述範圍。When the composition contains a surfactant, the content of the surfactant is preferably 0.001% by mass to 2.0% by mass, and more preferably 0.005% by mass to 1.0% by mass based on the total solid content of the composition. The surfactant may be used alone or in combination of two or more. When the amount of the surfactant is two or more, it is preferable that the total amount is the above range.

<高級脂肪酸衍生物等> 於本發明中的組成物中,為了防止由氧所引起的聚合阻礙,亦可添加如二十二酸或二十二醯胺般的高級脂肪酸衍生物等,並使其於塗佈後的乾燥的過程中偏向存在於組成物的表面。 當組成物含有高級脂肪酸衍生物等時,相對於組成物的總固體成分,高級脂肪酸衍生物等的含量較佳為0.1質量%~10質量%。 高級脂肪酸衍生物等可僅為一種,亦可為兩種以上。當高級脂肪酸衍生物等為兩種以上時,較佳為其合計為所述範圍。<Higher Fatty Acid Derivatives and the like> In the composition of the present invention, in order to prevent polymerization inhibition by oxygen, a higher fatty acid derivative such as behenic acid or behenylamine may be added and the like. It is biased toward the surface of the composition during the drying process after coating. When the composition contains a higher fatty acid derivative or the like, the content of the higher fatty acid derivative or the like is preferably 0.1% by mass to 10% by mass based on the total solid content of the composition. The higher fatty acid derivative or the like may be used alone or in combination of two or more. When two or more kinds of higher fatty acid derivatives and the like are used, it is preferred that the total is in the above range.

<溶劑> 當藉由塗佈而將本發明中的組成物製成層狀時,較佳為調配溶劑。只要可將組成物形成為層狀,則溶劑可無限制地使用公知者。 關於本發明的組成物中所使用的溶劑,作為酯類,例如可適宜地列舉乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯、ε-己內酯、δ-戊內酯、烷基氧基乙酸烷基酯(例如:烷基氧基乙酸甲酯、烷基氧基乙酸乙酯、烷基氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷基氧基丙酸烷基酯類(例如:3-烷基氧基丙酸甲酯、3-烷基氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷基氧基丙酸烷基酯類(例如:2-烷基氧基丙酸甲酯、2-烷基氧基丙酸乙酯、2-烷基氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷基氧基-2-甲基丙酸甲酯及2-烷基氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、及2-氧代丁酸乙酯等,以及,作為醚類,例如可適宜地列舉二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、及丙二醇單丙醚乙酸酯等,以及,作為酮類,例如可適宜地列舉甲基乙基酮、環己酮、環戊酮、2-庚酮、3-庚酮、及N-甲基-2-吡咯啶酮等,以及,作為芳香族烴類,例如可適宜地列舉甲苯、二甲苯、大茴香醚、檸檬烯等,作為亞碸類,可適宜地列舉二甲基亞碸。<Solvent> When the composition of the present invention is formed into a layer by coating, it is preferred to prepare a solvent. The solvent can be used without any limitation as long as the composition can be formed into a layer. The solvent to be used in the composition of the present invention may, for example, be ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate or butyl propionate. Isobutyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, alkyl alkyl acetate (Example: methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (eg methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, B) Methyl oxyacetate, ethyl ethoxyacetate, etc.), alkyl 3-alkyloxypropionate (for example: methyl 3-alkyloxypropionate, 3-alkyloxypropionic acid) Ethyl ester or the like (e.g., methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), 2- Alkyl alkyl propionate (for example: methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (for example 2- Methyl methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropane Propyl ester, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-alkyloxy-2-methylpropanoate and 2-alkyloxy-2- Ethyl methacrylate (for example, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, Propyl pyruvate, methyl acetate methyl acetate, ethyl acetate ethyl acetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, etc., and, as the ether, for example, diethyl Diol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol Alcohol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate, and the like, and as ketones, for example Methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, and N-methyl-2-pyrrolidone are exemplified, and, as an aromatic hydrocarbon, for example, Suitably, toluene, xylene, anisole, limonene, etc. are listed. It is a sulfoxide-based, can suitably include dimethyl sulfoxide.

就塗佈表面狀態的改良等的觀點而言,將兩種以上的溶劑混合的形態亦較佳。其中,較佳為如下的混合溶液,其包含選自3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、環戊酮、γ-丁內酯、二甲基亞碸、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的兩種以上。特佳為併用二甲基亞碸與γ-丁內酯。From the viewpoint of improvement in the state of the coated surface, etc., a form in which two or more kinds of solvents are mixed is also preferable. Among them, preferred is a mixed solution comprising methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, and diethyl phthalate. Alcohol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, dimethyl azine, ethyl carbitol Two or more of an acid ester, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate. It is particularly preferred to use dimethyl hydrazine and γ-butyrolactone in combination.

當組成物含有溶劑時,就塗佈性的觀點而言,溶劑的含量較佳為設為組成物的總固體成分濃度成為5質量%~80質量%的量,更佳為5質量%~70質量%,進而更佳為10質量%~60質量%。 溶劑可僅為一種,亦可為兩種以上。當溶劑為兩種以上時,較佳為其合計為所述範圍。 另外,就膜強度的觀點而言,相對於組成物的總質量,N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N,N-二甲基乙醯胺及N,N-二甲基甲醯胺的含量較佳為未滿5質量%,更佳為未滿1質量%,進而更佳為未滿0.5質量%,尤佳為未滿0.1質量%。When the composition contains a solvent, the content of the solvent is preferably such that the total solid content of the composition is from 5% by mass to 80% by mass, and more preferably from 5% by mass to 70%. The mass%, and more preferably 10% by mass to 60% by mass. The solvent may be used alone or in combination of two or more. When the solvent is two or more, it is preferred that the total is in the above range. Further, in terms of film strength, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N,N-dimethylacetamide, relative to the total mass of the composition The content of N,N-dimethylformamide is preferably less than 5% by mass, more preferably less than 1% by mass, still more preferably less than 0.5% by mass, and particularly preferably less than 0.1% by mass.

<其他添加劑> 於無損本發明的效果的範圍內,本發明中的組成物視需要可調配各種添加物,例如無機粒子、硬化劑、硬化觸媒、填充劑、抗氧化劑、紫外線吸收劑、抗凝聚劑等。當調配該些添加劑時,較佳為將其合計調配量設為組成物的固體成分的3質量%以下。<Other Additives> The composition of the present invention may be formulated with various additives such as inorganic particles, hardeners, hardening catalysts, fillers, antioxidants, ultraviolet absorbers, and anti-drugs as needed within the scope of the effects of the present invention. Coagulant, etc. When these additives are blended, the total amount of the additives is preferably 3% by mass or less of the solid content of the composition.

就塗佈表面狀態的觀點而言,本發明中的組成物的水分含量較佳為未滿5質量%,更佳為未滿1質量%,進而更佳為未滿0.6質量%。The moisture content of the composition in the present invention is preferably less than 5% by mass, more preferably less than 1% by mass, still more preferably less than 0.6% by mass, from the viewpoint of coating the surface state.

就絕緣性的觀點而言,本發明中的組成物的金屬含量較佳為未滿5質量ppm,更佳為未滿1質量ppm,進而更佳為未滿0.5質量ppm。作為金屬,可列舉:鈉、鉀、鎂、鈣、鐵、鉻、鎳等。當包含多種金屬時,較佳為該些金屬的合計為所述範圍。 另外,作為減低組成物中所無意地包含的金屬雜質的方法,可列舉以下等方法:選擇金屬含量少的原料作為構成組成物的原料、對構成組成物的原料進行過濾器過濾、於裝置內利用聚四氟乙烯等進行加襯而在盡可能抑制污染的條件下進行蒸餾。From the viewpoint of the insulating property, the metal content of the composition in the present invention is preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, still more preferably less than 0.5 ppm by mass. Examples of the metal include sodium, potassium, magnesium, calcium, iron, chromium, nickel, and the like. When a plurality of metals are contained, it is preferred that the total of the metals is in the range. In addition, as a method of reducing the metal impurities which are unintentionally contained in the composition, a method of selecting a raw material having a small metal content as a raw material constituting the composition, and filtering the raw material constituting the composition in a device may be mentioned. The lining is carried out by using polytetrafluoroethylene or the like to carry out distillation under conditions which suppress contamination as much as possible.

就配線腐蝕性的觀點而言,本發明中的組成物的鹵素原子的含量較佳為未滿500質量ppm,更佳為未滿300質量ppm,進而更佳為未滿200質量ppm。其中,以鹵素離子的狀態存在者較佳為未滿5質量ppm,更佳為未滿1質量ppm,進而更佳為未滿0.5質量ppm。作為鹵素原子,可列舉氯原子及溴原子。較佳為氯原子及溴原子、或氯化物離子及溴化物離子的合計分別為所述範圍。The content of the halogen atom of the composition in the present invention is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, even more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosion. Among them, the halogen ion is preferably present in an amount of less than 5 ppm by mass, more preferably less than 1 ppm by mass, still more preferably less than 0.5 ppm by mass. Examples of the halogen atom include a chlorine atom and a bromine atom. Preferably, the total of the chlorine atom and the bromine atom, or the chloride ion and the bromide ion are each in the above range.

<組成物的製備> 本發明中的組成物可將所述各成分混合來製備。混合方法並無特別限定,可藉由先前公知的方法來進行。 另外,較佳為以去除組成物中的灰塵或微粒等異物為目的,進行使用過濾器的過濾。作為過濾器的孔徑,較佳為1 μm以下,更佳為0.5 μm以下,進而更佳為0.1 μm以下。關於過濾器的材質,較佳為聚四氟乙烯製、聚乙烯製、尼龍製的過濾器。過濾器亦可使用預先利用有機溶劑進行了洗滌者。過濾器過濾步驟中,可將多種過濾器串聯或者並列連接來使用。當使用多種過濾器時,亦可將孔徑及/或材質不同的過濾器組合使用。另外,可對各種材料進行多次過濾,多次過濾的步驟亦可為循環過濾步驟。另外,亦可加壓來進行過濾,加壓的壓力較佳為0.05 MPa以上、0.3 MPa以下。 除使用過濾器的過濾以外,亦可使用吸附材料進行雜質的去除。另外,亦可將使用過濾器的過濾與使用吸附材料的雜質的去除組合進行。作為吸附材料,可使用公知的吸附材料,例如可使用二氧化矽凝膠、沸石等無機系吸附材料,活性碳等有機系吸附材料。<Preparation of Composition> The composition in the present invention can be prepared by mixing the above components. The mixing method is not particularly limited and can be carried out by a conventionally known method. Further, it is preferred to perform filtration using a filter for the purpose of removing foreign matter such as dust or fine particles in the composition. The pore diameter of the filter is preferably 1 μm or less, more preferably 0.5 μm or less, and still more preferably 0.1 μm or less. The material of the filter is preferably a filter made of polytetrafluoroethylene, polyethylene or nylon. The filter can also be washed using a solvent previously prepared with an organic solvent. In the filter filtration step, a plurality of filters can be used in series or in parallel. When using a variety of filters, it is also possible to combine filters with different apertures and/or materials. In addition, various materials can be filtered multiple times, and the step of multiple filtration can also be a cyclic filtration step. Further, the filtration may be carried out under pressure, and the pressure of the pressurization is preferably 0.05 MPa or more and 0.3 MPa or less. In addition to filtration using a filter, an adsorbent material may also be used for impurity removal. Alternatively, the filtration using the filter may be combined with the removal of impurities using the adsorbent material. As the adsorbent, a known adsorbent can be used. For example, an inorganic adsorbent such as cerium oxide gel or zeolite or an organic adsorbent such as activated carbon can be used.

<用途> 本發明的硬化膜的製造方法可較佳地用於半導體元件的絕緣膜、再配線層用層間絕緣膜等的領域。即,本發明亦揭示包括本發明的硬化膜的製造方法的半導體元件的製造方法。尤其,由於解析性良好,故可較佳地用於三維安裝元件中的再配線層用層間絕緣膜等的製造中。即,本發明亦揭示包括本發明的硬化膜的製造方法的再配線層用層間絕緣膜的製造方法。進而,揭示利用本發明的硬化膜的製造方法而獲得的硬化膜、及利用本發明的硬化膜的製造方法而獲得的半導體元件。 另外,藉由本發明而製造的硬化膜亦可用於電子學用的光阻劑(伽伐尼(電解)抗蝕劑(galvanic resist)、蝕刻阻劑、頂焊抗蝕劑(solder top resist))等。 另外,藉由本發明而製造的硬化膜亦可用於平版版面或網版版面等版面的製造,針對成形零件的蝕刻的使用,電子學、尤其是微電子學中的保護塗漆及介電層的製造等。<Application> The method for producing a cured film of the present invention can be preferably used in the field of an insulating film for a semiconductor element, an interlayer insulating film for a rewiring layer, and the like. That is, the present invention also discloses a method of producing a semiconductor element including the method for producing a cured film of the present invention. In particular, since it has good resolution, it can be preferably used in the production of an interlayer insulating film for a rewiring layer in a three-dimensional mounting element. That is, the present invention also discloses a method for producing an interlayer insulating film for a rewiring layer including the method for producing a cured film of the present invention. Further, a cured film obtained by the method for producing a cured film of the present invention and a semiconductor element obtained by the method for producing a cured film of the present invention are disclosed. Further, the cured film produced by the present invention can also be used for a photoresist for electronics (galvanic resist, etch resist, solder top resist) Wait. In addition, the cured film produced by the present invention can also be used for the manufacture of layouts such as lithographic or screen layouts, for the use of etching of formed parts, and for the protection of paints and dielectric layers in electronics, especially in microelectronics. Manufacturing, etc.

繼而,對將所述組成物用於再配線層用層間絕緣膜的半導體元件的一實施形態進行說明。 圖1所示的半導體元件100是所謂的三維安裝元件,將積層有多個半導體器件(半導體晶片)101a~半導體器件(半導體晶片)101d的積層體101配置於配線基板120上。 再者,於該實施形態中,以半導體器件(半導體晶片)的積層數為4層的情況為中心進行說明,但半導體器件(半導體晶片)的積層數並無特別限定,例如可為2層、8層、16層、32層等。另外,亦可為1層。Next, an embodiment in which the composition is used for a semiconductor element of an interlayer insulating film for a wiring layer will be described. The semiconductor element 100 shown in FIG. 1 is a so-called three-dimensional mounting element, and a laminated body 101 in which a plurality of semiconductor devices (semiconductor wafer) 101a to semiconductor device (semiconductor wafer) 101d are laminated is disposed on the wiring substrate 120. In this embodiment, the number of layers of the semiconductor device (semiconductor wafer) is four, and the number of layers of the semiconductor device (semiconductor wafer) is not particularly limited. For example, it may be two layers. 8 layers, 16 layers, 32 layers, and the like. In addition, it can also be 1 layer.

多個半導體器件101a~半導體器件101d均包含矽基板等的半導體晶圓。 最上段的半導體器件101a不具有貫穿電極,於其一面上形成有電極墊(未圖示)。 半導體器件101b~半導體器件101d具有貫穿電極102b~貫穿電極102d,於各半導體器件的兩面上設置有一體地設置於貫穿電極上的連接墊(未圖示)。Each of the plurality of semiconductor devices 101a to 101d includes a semiconductor wafer such as a germanium substrate. The uppermost semiconductor device 101a does not have a through electrode, and an electrode pad (not shown) is formed on one surface thereof. The semiconductor device 101b to the semiconductor device 101d have a through electrode 102b to a through electrode 102d, and connection pads (not shown) integrally provided on the through electrodes are provided on both surfaces of each semiconductor device.

積層體101具有將不具有貫穿電極的半導體器件101a、及具有貫穿電極102b~貫穿電極102d的半導體器件101b~半導體器件101d覆晶連接而成的結構。 即,不具有貫穿電極的半導體器件101a的電極墊、與鄰接於其的具有貫穿電極102b的半導體器件101b的半導體器件101a側的連接墊藉由焊料凸塊等金屬凸塊103a來連接,具有貫穿電極102b的半導體器件101b的另一側的連接墊、與鄰接於其的具有貫穿電極102c的半導體器件101c的半導體器件101b側的連接墊藉由焊料凸塊等金屬凸塊103b來連接。同樣地,具有貫穿電極102c的半導體器件101c的另一側的連接墊、與鄰接於其的具有貫穿電極102d的半導體器件101d的半導體器件101c側的連接墊藉由焊料凸塊等金屬凸塊103c來連接。The laminated body 101 has a structure in which a semiconductor device 101a having no through electrodes and a semiconductor device 101b to a semiconductor device 101d having a through electrode 102b to a through electrode 102d are flip-chip bonded. That is, the electrode pads of the semiconductor device 101a having no through electrodes and the connection pads on the side of the semiconductor device 101a of the semiconductor device 101b having the through electrodes 102b adjacent thereto are connected by metal bumps 103a such as solder bumps, and have a through-hole The connection pad on the other side of the semiconductor device 101b of the electrode 102b and the connection pad on the side of the semiconductor device 101b of the semiconductor device 101c having the through electrode 102c adjacent thereto are connected by a metal bump 103b such as a solder bump. Similarly, the connection pad on the other side of the semiconductor device 101c having the through electrode 102c and the connection pad on the side of the semiconductor device 101c having the semiconductor device 101d having the through electrode 102d adjacent thereto are made of a metal bump 103c such as a solder bump. Come connect.

於各半導體器件101a~半導體器件101d的間隙中形成有底部填充層110,各半導體器件101a~半導體器件101d經由底部填充層110而積層。The underfill layer 110 is formed in a gap between each of the semiconductor devices 101a to 101d, and each of the semiconductor devices 101a to 101d is laminated via the underfill layer 110.

積層體101積層於配線基板120。 作為配線基板120,例如使用將樹脂基板、陶瓷基板、玻璃基板等絕緣基板用作基材的多層配線基板。作為應用樹脂基板的配線基板120,可列舉多層覆銅積層板(多層印刷配線板)等。The laminated body 101 is laminated on the wiring substrate 120. As the wiring substrate 120, for example, a multilayer wiring board using an insulating substrate such as a resin substrate, a ceramic substrate, or a glass substrate as a substrate is used. As the wiring substrate 120 to which the resin substrate is applied, a multilayer copper clad laminate (multilayer printed wiring board) or the like can be given.

於配線基板120的一面上設置有表面電極120a。 在配線基板120與積層體101之間配置有形成有再配線層105的絕緣層115,配線基板120與積層體101經由再配線層105而電性連接。絕緣層115是使用本發明中的感光性樹脂組成物所形成者。 即,再配線層105的一端經由焊料凸塊等金屬凸塊103d,而與形成於半導體器件101d的再配線層105側的面上的電極墊連接。另外,再配線層105的另一端經由焊料凸塊等金屬凸塊103e而與配線基板的表面電極120a連接。 而且,在絕緣層115與積層體101之間形成有底部填充層110a。另外,在絕緣層115與配線基板120之間形成有底部填充層110b。A surface electrode 120a is provided on one surface of the wiring substrate 120. An insulating layer 115 on which the rewiring layer 105 is formed is disposed between the wiring substrate 120 and the laminated body 101, and the wiring substrate 120 and the laminated body 101 are electrically connected via the rewiring layer 105. The insulating layer 115 is formed by using the photosensitive resin composition of the present invention. In other words, one end of the rewiring layer 105 is connected to the electrode pad formed on the surface on the side of the rewiring layer 105 of the semiconductor device 101d via the metal bump 103d such as a solder bump. Further, the other end of the rewiring layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump. Further, an underfill layer 110a is formed between the insulating layer 115 and the laminated body 101. Further, an underfill layer 110b is formed between the insulating layer 115 and the wiring substrate 120.

除如上所述以外,藉由本發明而製造的硬化膜可於使用聚醯亞胺或聚苯并噁唑的各種用途中廣泛採用。 另外,因聚醯亞胺或聚苯并噁唑耐熱,故藉由本發明而製造的硬化膜等亦可適宜地用作液晶顯示器、電子紙等顯示裝置用的透明塑膠基板、汽車零件、耐熱塗料、塗佈劑、膜用途。 [實施例]In addition to the above, the cured film produced by the present invention can be widely used in various applications using polyimine or polybenzoxazole. In addition, since the polyimide film or the polybenzoxazole is heat-resistant, the cured film produced by the present invention can be suitably used as a transparent plastic substrate for a display device such as a liquid crystal display or an electronic paper, an automobile part, or a heat-resistant paint. , coating agent, film use. [Examples]

以下,列舉實施例來更具體地說明本發明。以下的實施例中所示的材料、使用量、比例、處理內容、處理順序等只要不脫離本發明的主旨,則可進行適宜變更。因此,本發明的範圍並不限定於以下所示的具體例。Hereinafter, the present invention will be more specifically described by way of examples. The materials, the amounts, the ratios, the treatment contents, the treatment procedures, and the like shown in the following examples can be appropriately changed without departing from the gist of the invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.

<重量平均分子量(Mw)×數量平均分子量(Mn)的測定方法> Mw及Mn是藉由凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定所得的聚苯乙烯換算值,藉由以下方法而測定。 使用HLC-8220(東曹(Tosoh)(股份)製造)作為測定裝置,並使用保護管柱(Guard Column)HZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000、TSKgel Super HZ2000(東曹(股份)製造)作為管柱。另外,溶離液使用四氫呋喃(Tetrahydrofuran,THF),於40℃下以流速0.35 mL/min的速度進行測定。檢測是使用紫外線(UV)254 nm檢測器。另外,作為測定樣品,使用利用THF將含有雜環的聚合物前驅物稀釋調整為0.1質量%的樣品。<Measurement Method of Weight Average Molecular Weight (Mw) × Number Average Molecular Weight (Mn)> Mw and Mn are polystyrene-converted values measured by Gel Permeation Chromatography (GPC), and the following methods are used. And measured. HLC-8220 (manufactured by Tosoh Co., Ltd.) was used as a measuring device, and Guard Column HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, TSKgel Super HZ2000 ( Tosoh (manufactured by Tosoh) as a pipe string. Further, the eluate was measured using tetrahydrofuran (THF) at a flow rate of 0.35 mL/min at 40 °C. The detection was performed using an ultraviolet (UV) 254 nm detector. Further, as a measurement sample, a sample in which a heterocyclic-containing polymer precursor was diluted with THF to 0.1% by mass was used.

(合成例1 PIp-A的合成) 將21.2 g的4,4'-氧基二鄰苯二甲酸二酐(於140℃下乾燥12小時)、18.1 g的甲基丙烯酸-2-羥基乙酯、0.05 g的氫醌、23.9 g的吡啶、以及150 mL的二乙二醇二甲醚(diglyme)混合,並於60℃的溫度下攪拌2小時,製造4,4'-氧基二鄰苯二甲酸與甲基丙烯酸-2-羥基乙酯的二酯。繼而,將反應混合物冷卻至-10℃,一面將溫度保持為-10℃±4℃,一面歷時60分鐘添加17.1 g的SOCl2 。利用50 mL的N-甲基吡咯啶酮進行稀釋後,於-10℃±4℃下,歷時60分鐘將使11.7 g的4,4'-二胺基二苯基醚溶解於100 mL的N-甲基吡咯啶酮中而成的溶液滴加至反應混合物中,將混合物攪拌2小時。繼而,投入至6公升的水中使聚醯亞胺前驅物沉澱,並以5,000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,再次投入至4公升的水中進而攪拌30分鐘並再次進行過濾。繼而,於減壓下,在45℃下將所得的聚醯亞胺前驅物乾燥3日。 該聚醯亞胺前驅物的重量平均分子量為16,000,數量平均分子量為7,620,分散度為2.1。(Synthesis Example 1 Synthesis of PIp-A) 21.2 g of 4,4'-oxydiphthalic dianhydride (dried at 140 ° C for 12 hours), 18.1 g of 2-hydroxyethyl methacrylate Mixing 0.05 g of hydroquinone, 23.9 g of pyridine, and 150 mL of diethylene glycol diglyme, and stirring at 60 ° C for 2 hours to produce 4,4'-oxydi-o-benzene Diester of dicarboxylic acid and 2-hydroxyethyl methacrylate. Then, the reaction mixture was cooled to -10 ° C while maintaining the temperature at -10 ° C ± 4 ° C, and 17.1 g of SOCl 2 was added over 60 minutes. After dilution with 50 mL of N-methylpyrrolidone, 11.7 g of 4,4'-diaminodiphenyl ether was dissolved in 100 mL of N at -10 °C ± 4 °C for 60 minutes. A solution of -methylpyrrolidone was added dropwise to the reaction mixture, and the mixture was stirred for 2 hours. Then, the polyethyleneimine precursor was precipitated by putting into 6 liters of water, and the water-polyimine precursor mixture was stirred at 5,000 rpm for 15 minutes. The polyimine precursor was filtered, and again poured into 4 liters of water, stirred for 30 minutes, and filtered again. Then, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure. The polyimine precursor had a weight average molecular weight of 16,000, a number average molecular weight of 7,620, and a degree of dispersion of 2.1.

<合成例2 PIp-B的合成> 將10.5 g的均苯四甲酸二酐、10.0 g的4,4'-二胺基二苯基醚、4.0 g的吡啶、以及150 mL的N-甲基-2-吡咯啶酮混合,並於60℃的溫度下攪拌3小時。繼而,投入至6公升的水中使聚醯亞胺前驅物沉澱,並以5,000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,再次投入至6公升的水中進而攪拌30分鐘並再次進行過濾。繼而,於減壓下,在45℃下將所得的聚醯亞胺前驅物乾燥3日。 該聚醯亞胺前驅物的重量平均分子量為20,000,數量平均分子量為8,000,分散度為2.5。<Synthesis Example 2 Synthesis of PIp-B> 10.5 g of pyromellitic dianhydride, 10.0 g of 4,4'-diaminodiphenyl ether, 4.0 g of pyridine, and 150 mL of N-methyl group were used. The 2-pyrrolidone was mixed and stirred at a temperature of 60 ° C for 3 hours. Then, the polyethyleneimine precursor was precipitated by putting into 6 liters of water, and the water-polyimine precursor mixture was stirred at 5,000 rpm for 15 minutes. The polyimine precursor was filtered, re-introduced into 6 liters of water, stirred for 30 minutes, and filtered again. Then, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure. The polyimine precursor had a weight average molecular weight of 20,000, a number average molecular weight of 8,000, and a degree of dispersion of 2.5.

<合成例3 PBp-D的合成> 將2,2'-雙(3-胺基-4-羥基苯基)六氟丙烷13.92 g添加於N-甲基-2-吡咯啶酮100 mL中,進行攪拌而加以溶解。繼而,一面將溫度保持為0℃~5℃,一面以10分鐘滴加辛二醯氯8.00 g,然後繼續攪拌60分鐘。繼而,投入至6公升的水中使聚苯并噁唑前驅物沉澱,並以5,000 rpm的速度將水-聚苯并噁唑前驅物混合物攪拌15分鐘。對聚苯并噁唑前驅物進行濾取,再次投入至6公升的水中進而攪拌30分鐘並再次進行過濾。繼而,於減壓下,在45℃下將所得的聚苯并噁唑前驅物乾燥3日。 該聚苯并噁唑前驅物的重量平均分子量為11,500,數量平均分子量為6,800,分散度為1.7。<Synthesis Example 3 Synthesis of PBp-D> 13.92 g of 2,2'-bis(3-amino-4-hydroxyphenyl)hexafluoropropane was added to 100 mL of N-methyl-2-pyrrolidone. Stir and dissolve. Then, while maintaining the temperature at 0 ° C to 5 ° C, 8.00 g of octane ruthenium chloride was added dropwise over 10 minutes, and stirring was continued for 60 minutes. Then, the polybenzoxazole precursor was precipitated by putting into 6 liters of water, and the water-polybenzoxazole precursor mixture was stirred at 5,000 rpm for 15 minutes. The polybenzoxazole precursor was filtered, re-introduced into 6 liters of water and stirred for 30 minutes and filtered again. Then, the obtained polybenzoxazole precursor was dried at 45 ° C for 3 days under reduced pressure. The polybenzoxazole precursor had a weight average molecular weight of 11,500, a number average molecular weight of 6,800, and a degree of dispersion of 1.7.

<合成例4 PBp-E的合成> 於合成例3中,除將辛二醯氯變更為11.21 g的4,4'-氧二苯甲醯氯以外,以同樣的方式獲得聚苯并噁唑前驅物。 該聚苯并噁唑前驅物的重量平均分子量為15,000,數量平均分子量為7,100,分散度為2.1。<Synthesis Example 4 Synthesis of PBp-E> In Synthesis Example 3, polybenzoxazole was obtained in the same manner except that 4,4'-oxybenzophenone chloride was changed to 11.21 g of octane dichloride. Precursor. The polybenzoxazole precursor had a weight average molecular weight of 15,000, a number average molecular weight of 7,100, and a degree of dispersion of 2.1.

<合成例5 PB-F的合成> 於合成例3中,除將辛二醯氯變更為8.55 g的壬二醯氯以外,以同樣的方式獲得聚苯并噁唑前驅物。使所得的前驅物溶解於N-甲基-2-吡咯啶酮100 mL中,添加100 mg的對甲苯磺酸,於200℃下攪拌48小時,使噁唑化結束。繼而,投入至6公升的水中使聚苯并噁唑沉澱,並以5,000 rpm的速度將水-聚苯并噁唑混合物攪拌15分鐘。對聚苯并噁唑進行濾取,再次投入至6公升的水中進而攪拌30分鐘並再次進行過濾。繼而,於減壓下,在45℃下將所得的聚苯并噁唑乾燥3日。 該聚苯并噁唑的重量平均分子量為17,500,數量平均分子量為10,000,分散度為1.8。<Synthesis Example 5 Synthesis of PB-F> In Synthesis Example 3, a polybenzoxazole precursor was obtained in the same manner except that octane ruthenium chloride was changed to 8.55 g of ruthenium dichloride. The obtained precursor was dissolved in 100 mL of N-methyl-2-pyrrolidone, and 100 mg of p-toluenesulfonic acid was added thereto, and the mixture was stirred at 200 ° C for 48 hours to complete the oxazole. Then, the polybenzoxazole was precipitated by putting into 6 liters of water, and the water-polybenzoxazole mixture was stirred at 5,000 rpm for 15 minutes. The polybenzoxazole was filtered off, poured again into 6 liters of water, stirred for 30 minutes, and filtered again. Then, the obtained polybenzoxazole was dried at 45 ° C for 3 days under reduced pressure. The polybenzoxazole had a weight average molecular weight of 17,500, a number average molecular weight of 10,000, and a degree of dispersion of 1.8.

<合成例6 PIp-C> 於合成例1中,除將21.2 g的4,4'-氧基二鄰苯二甲酸二酐變更為20.1 g的二苯基-3,3',4,4'-四羧酸二酐以外,以同樣的方式獲得聚醯亞胺前驅物。 20.1 g的二苯基-3,3',4,4'-四羧酸二酐(於140℃下乾燥12小時)、18.1 g的甲基丙烯酸-2-羥基乙酯、0.05 g的氫醌、23.9 g的吡啶、以及150 mL的N-甲基吡咯啶酮混合,並於60℃的溫度下攪拌2小時,製造4,4'-氧基二鄰苯二甲酸與甲基丙烯酸-2-羥基乙酯的二酯。繼而,將反應混合物冷卻至-10℃,一面將溫度保持為-10℃±4℃,一面歷時60分鐘添加17.1 g的SOCl2 。利用50 mL的N-甲基吡咯啶酮進行稀釋後,於-10℃±4℃下,歷時60分鐘將使11.7 g的4,4'-二胺基二苯基醚溶解於100 mL的N-甲基吡咯啶酮中而成的溶液滴加至反應混合物中,將混合物攪拌2小時。繼而,投入6公升的水使聚醯亞胺前驅物沉澱,並以5,000 rpm的速度將水-聚醯亞胺前驅物混合物攪拌15分鐘。對聚醯亞胺前驅物進行濾取,再次投入至4公升的水中進而攪拌30分鐘並再次進行過濾。繼而,於減壓下,在45℃下將所得的聚醯亞胺前驅物乾燥3日。 該聚醯亞胺前驅物的重量平均分子量為15,000,數量平均分子量為6,820,分散度為2.2。<Synthesis Example 6 PIp-C> In Synthesis Example 1, except that 21.2 g of 4,4'-oxydiphthalic dianhydride was changed to 20.1 g of diphenyl-3,3',4,4 In addition to the tetracarboxylic dianhydride, a polyimine precursor was obtained in the same manner. 20.1 g of diphenyl-3,3',4,4'-tetracarboxylic dianhydride (dried at 140 ° C for 12 hours), 18.1 g of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone 23.9 g of pyridine and 150 mL of N-methylpyrrolidone were mixed and stirred at 60 ° C for 2 hours to produce 4,4'-oxydiphthalic acid and methacrylic acid-2- a diester of hydroxyethyl ester. Then, the reaction mixture was cooled to -10 ° C while maintaining the temperature at -10 ° C ± 4 ° C, and 17.1 g of SOCl 2 was added over 60 minutes. After dilution with 50 mL of N-methylpyrrolidone, 11.7 g of 4,4'-diaminodiphenyl ether was dissolved in 100 mL of N at -10 °C ± 4 °C for 60 minutes. A solution of -methylpyrrolidone was added dropwise to the reaction mixture, and the mixture was stirred for 2 hours. Then, 6 liters of water was charged to precipitate the polyimine precursor, and the water-polyimine precursor mixture was stirred at 5,000 rpm for 15 minutes. The polyimine precursor was filtered, and again poured into 4 liters of water, stirred for 30 minutes, and filtered again. Then, the obtained polyimine precursor was dried at 45 ° C for 3 days under reduced pressure. The polyimine precursor had a weight average molecular weight of 15,000, a number average molecular weight of 6,820, and a degree of dispersion of 2.2.

[化69] [化69]

<實施例及比較例> 將下述記載的成分混合,製成均一的溶液,從而製備組成物(塗佈液)。 <<組成物的組成>> 含有雜環的聚合物前驅物:表6或表7記載的質量% 胺產生劑:表6或表7記載的質量% 聚合起始劑:表6或表7記載的質量% 交聯劑:表6或表7記載的質量% 溶劑:表6或表7記載的質量% 再者,於實施例1中,含有雜環的聚合物前驅物的「PIp-A」表示前驅物的種類,「33」的數值表示組成物中的調配量(單位:質量%)。關於其他成分亦同樣。關於其他實施例及比較例亦同樣。<Examples and Comparative Examples> The components described below were mixed to prepare a uniform solution to prepare a composition (coating liquid). <<Composition of Composition>> Polymer precursor containing a hetero ring: mass % shown in Table 6 or Table 7 Amine generator: mass % shown in Table 6 or Table 7 Polymerization initiator: Table 6 or Table 7 % by mass: Crosslinking agent: mass % shown in Table 6 or Table 7 Solvent: mass % shown in Table 6 or Table 7 Further, in Example 1, "PIp-A" of a polymer precursor containing a hetero ring The type of the precursor is indicated, and the value of "33" indicates the amount of the composition (unit: mass%). The same applies to other ingredients. The same applies to the other examples and comparative examples.

[表6] [Table 6]

[表7] [Table 7]

[化70]TBG1的胺產生溫度為150℃、pKa1=1.9。 TBG2的胺產生溫度為150℃、pKa1=1.9。 TBG3的胺產生溫度為150℃、pKa1=1.9。 TBG4的胺產生溫度為145℃。 TBG5的胺產生溫度為150℃。 TBG6的胺產生溫度為180℃。[化70] The amine production temperature of TBG1 was 150 ° C and pKa1 = 1.9. The amine production temperature of TBG2 was 150 ° C and pKa1 = 1.9. The amine production temperature of TBG3 was 150 ° C and pKa1 = 1.9. The amine production temperature of TBG4 was 145 °C. The amine production temperature of TBG5 was 150 °C. The amine production temperature of TBG6 was 180 °C.

[化71]ini1為巴斯夫製造的豔佳固(IRGACURE)-OXE01。 ini2為巴斯夫製造的豔佳固(IRGACURE)-OXE02。 ini3是利用國際公開WO05/069075號手冊的合成例4中記載的方法來合成。 ini4為巴斯夫製造的豔佳固(IRGACURE)784。[71] Ini1 is IRGACURE-OXE01 manufactured by BASF. Ini2 is IRGACURE-OXE02 manufactured by BASF. Ini3 was synthesized by the method described in Synthesis Example 4 of International Publication WO05/069075. Ini4 is an IRGACURE 784 made by BASF.

slv1:γ-丁內酯 slv2:二甲基亞碸 slv3:N-甲基-2-吡咯啶酮Slv1: γ-butyrolactone slv2: dimethyl azine slv3: N-methyl-2-pyrrolidone

[化72]link5 link1的分子量為330,且為新中村化學工業製造的4G。 link2的分子量為536,且為新中村化學工業製造的9G。 link3的分子量為1136,且為新中村化學工業製造的23G。 link4的分子量為318,且為東京化成工業製造的T2058。 link5的分子量為168,且為東京化成工業製造的B1525。 link6的分子量為951。[化72] Link5 Link1 has a molecular weight of 330 and is 4G manufactured by Shin-Nakamura Chemical Industry. Link2 has a molecular weight of 536 and is 9G manufactured by Shin-Nakamura Chemical Industry. Link3 has a molecular weight of 1136 and is 23G manufactured by Shin-Nakamura Chemical Industry. The molecular weight of link 4 is 318 and it is T2058 manufactured by Tokyo Chemical Industry Co., Ltd. The molecular weight of link 5 is 168, and it is B1525 manufactured by Tokyo Chemical Industry Co., Ltd. The molecular weight of link6 is 951.

<胺量> 使用連接頂空進樣器(headspace sampler)的氣相層析儀(安捷倫(Agilent)公司製造),並於下述條件下,定量硬化膜中的胺量。 將表6或表7中記載的組成物以1,000 rpm旋轉塗佈於4吋矽晶圓(1吋為2.54 cm),於加熱板上,於100℃下加熱2分鐘而成膜。使所得的晶圓於氮氣流下的加熱板上,於表6或表7記載的條件下加熱硬化。此處,表6或表7中的所謂加熱溫度,是指加熱硬化時的最高加熱溫度,所謂加熱時間,是指到達最高加熱溫度後的加熱時間。另外,開始升溫時的溫度為25℃。 將所得的晶圓分割,裝入20 mL小藥瓶(vial)中,並於頂空進樣器中在230℃下使硬化膜中的成分揮發7分鐘。 將所揮發的成分導入至氣相層析儀(安捷倫公司製造),使用毛細管柱HP-1MS(安捷倫公司製造),於150℃下加熱5分鐘後,以5℃/min的升溫速度升溫後,一面於230℃下加熱5分鐘一面進行分離,並藉由檢測器(火焰游離偵檢器(Flame Ionization Detector,FID))(安捷倫公司製造)進行檢測。根據所得的胺的峰值面積與另外製作的胺的標準曲線來計算硬化膜中的胺含量。再者,將各種量的所對應的胺秤量至小藥瓶中,並藉由與樣品相同的條件進行測定,根據所得的峰值面積與秤量值製作標準曲線。<Amount of Amine> The amount of the amine in the cured film was quantified using a gas chromatograph (manufactured by Agilent) connected to a headspace sampler under the following conditions. The composition described in Table 6 or Table 7 was spin-coated at 4 rpm on a 4 吋矽 wafer (2.5 cm in a crucible), and heated on a hot plate at 100 ° C for 2 minutes to form a film. The obtained wafer was heat-hardened under the conditions described in Table 6 or Table 7 on a hot plate under a nitrogen stream. Here, the heating temperature in Table 6 or Table 7 means the highest heating temperature at the time of heat curing, and the heating time means the heating time after reaching the maximum heating temperature. Further, the temperature at the start of temperature rise was 25 °C. The resulting wafer was divided, placed in a 20 mL vial, and the components in the cured film were volatilized at 230 ° C for 7 minutes in a headspace sampler. The volatilized component was introduced into a gas chromatograph (manufactured by Agilent, Inc.), and heated at 150 ° C for 5 minutes using a capillary column HP-1MS (manufactured by Agilent Technologies), and then heated at a temperature elevation rate of 5 ° C / min. The separation was carried out while heating at 230 ° C for 5 minutes, and was detected by a detector (Flame Ionization Detector (FID)) (manufactured by Agilent Technologies). The amine content in the cured film was calculated from the peak area of the obtained amine and the standard curve of the separately prepared amine. Further, various amounts of the corresponding amines were weighed into a vial and measured by the same conditions as the sample, and a standard curve was prepared based on the obtained peak area and the weighing value.

<耐腐蝕性> 將表6或表7中記載的組成物以1,000 rpm旋轉塗佈於蒸鍍有銅的4吋矽晶圓,於加熱板上,於100℃下加熱2分鐘而成膜。使所得的晶圓於氮氣流下的加熱板上,於表6或表7中記載的條件下加熱硬化。 硬化後,將所得的晶圓於溫度85℃、相對濕度85%的條件下加以放置,並計量直至銅表面著色為止的時間。藉由目視確認著色。對耐腐蝕性以如下的觀點進行評價。 A:即便經過3小時以上,亦未看到著色 B:於超過1小時、3小時以內看到著色 C:於1小時以內看到著色<Corrosion Resistance> The composition described in Table 6 or Table 7 was spin-coated at 1,000 rpm on a 4-inch wafer on which copper was deposited, and heated on a hot plate at 100 ° C for 2 minutes to form a film. The obtained wafer was heat-hardened under the conditions described in Table 6 or Table 7 on a hot plate under a nitrogen stream. After hardening, the obtained wafer was placed under the conditions of a temperature of 85 ° C and a relative humidity of 85%, and the time until the surface of the copper was colored was measured. Coloring was confirmed by visual inspection. The corrosion resistance was evaluated as follows. A: No coloring was observed even after more than 3 hours. B: Coloring was observed within 1 hour and 3 hours. C: Coloring was observed within 1 hour.

<耐化學品性> 將表6或表7中記載的組成物以1,000 rpm旋轉塗佈於4吋矽晶圓,於加熱板上,於100℃下加熱2分鐘而成膜。使所得的晶圓於氮氣流下的加熱板上,於表6或表7記載的條件下加熱硬化。 硬化後,將所得的晶圓於N-甲基-2-吡咯啶酮中浸漬3小時,利用異丙醇進行清洗後,加以風乾。藉由目視觀察所得的晶圓的硬化膜中有無裂紋。對耐化學品性以如下的觀點進行評價。 A:於晶圓的整個面中,未看到裂紋 B:於晶圓的局部看到裂紋 C:於晶圓的整個面中看到裂紋<Chemical Resistance> The composition described in Table 6 or Table 7 was spin-coated on a 4-inch wafer at 1,000 rpm, and heated on a hot plate at 100 ° C for 2 minutes to form a film. The obtained wafer was heat-hardened under the conditions described in Table 6 or Table 7 on a hot plate under a nitrogen stream. After hardening, the obtained wafer was immersed in N-methyl-2-pyrrolidone for 3 hours, washed with isopropyl alcohol, and air-dried. The presence or absence of cracks in the cured film of the obtained wafer was visually observed. The chemical resistance was evaluated as follows. A: No crack was observed in the entire surface of the wafer. B: Crack was observed in the part of the wafer. C: Crack was observed in the entire surface of the wafer.

<逸氣性> 將表6或表7中記載的組成物以1,000 rpm旋轉塗佈於4吋矽晶圓,於加熱板上,於100℃下加熱2分鐘而成膜。使所得的晶圓於氮氣流下的加熱板上,於表6或表7記載的條件下加熱硬化。 硬化後,利用熱重量分析裝置(Q-500、TA儀器(TA Instruments)公司製造)使所得的晶圓於氮氣流下以10℃/min升溫至350℃為止,並測定質量減少率。對逸氣性以如下的觀點進行評價。 A:質量減少率未滿1% B:質量減少率為1%以上、未滿5% C:質量減少率為5%以上<Outgassing property> The composition described in Table 6 or Table 7 was spin-coated on a 4-inch wafer at 1,000 rpm, and heated on a hot plate at 100 ° C for 2 minutes to form a film. The obtained wafer was heat-hardened under the conditions described in Table 6 or Table 7 on a hot plate under a nitrogen stream. After the curing, the obtained wafer was heated to a temperature of 350 ° C at 10 ° C / min under a nitrogen stream by a thermogravimetric analyzer (Q-500, TA Instruments, manufactured by TA Instruments), and the mass reduction rate was measured. The outgassing property was evaluated as follows. A: The quality reduction rate is less than 1% B: The quality reduction rate is 1% or more, less than 5% C: The quality reduction rate is 5% or more

[表8] [Table 8]

[表9] [Table 9]

根據所述表所明確般,於本發明的製造方法中,可獲得耐腐蝕性及耐化學品性優異的硬化膜。尤其,藉由將加熱時的升溫溫度設為規定的範圍,可獲得各種性能更優異的硬化膜。As is clear from the above table, in the production method of the present invention, a cured film excellent in corrosion resistance and chemical resistance can be obtained. In particular, by setting the temperature rise temperature during heating to a predetermined range, a cured film having various properties is more excellent.

<實施例100> 將實施例11的感光性樹脂組成物通過細孔的寬度為0.8 μm的過濾器來進行加壓過濾後,旋塗(3,500 rpm,30秒)於形成有銅薄層的樹脂基板上來應用。於100℃下,將應用於樹脂基板上的感光性樹脂組成物乾燥5分鐘後,使用對準器(Karl-Suss MA150)進行曝光。曝光是利用高壓水銀燈來進行,測定波長365 nm下的曝光能量。曝光後,利用環戊酮對圖像進行75秒鐘顯影。 繼而,於180℃下進行20分鐘加熱。如此,形成再配線層用層間絕緣膜。 該再配線層用層間絕緣膜的絕緣性優異。 另外,使用該再配線層用層間絕緣膜來製造半導體元件,結果確認到無問題地進行動作。<Example 100> The photosensitive resin composition of Example 11 was subjected to pressure filtration through a filter having a pore width of 0.8 μm, and then spin-coated (3,500 rpm, 30 seconds) to a resin having a thin copper layer formed thereon. Apply on the substrate. The photosensitive resin composition applied to the resin substrate was dried at 100 ° C for 5 minutes, and then exposed using an aligner (Karl-Suss MA150). Exposure was performed using a high pressure mercury lamp to measure the exposure energy at a wavelength of 365 nm. After exposure, the image was developed with cyclopentanone for 75 seconds. Then, heating was carried out at 180 ° C for 20 minutes. Thus, an interlayer insulating film for a rewiring layer is formed. The interlayer insulating film for a rewiring layer is excellent in insulation properties. In addition, the semiconductor element was produced using the interlayer insulating film for a rewiring layer, and as a result, it was confirmed that the operation was performed without any problem.

100‧‧‧半導體元件
101‧‧‧積層體
101a~101d‧‧‧半導體器件
102b~102d‧‧‧貫穿電極
103a~103e‧‧‧金屬凸塊
105‧‧‧再配線層
110、110a、110b‧‧‧底部填充層
115‧‧‧絕緣層
120‧‧‧配線基板
120a‧‧‧表面電極
100‧‧‧Semiconductor components
101‧‧‧Layer
101a~101d‧‧‧ semiconductor devices
102b~102d‧‧‧through electrode
103a~103e‧‧‧Metal bumps
105‧‧‧Rewiring layer
110, 110a, 110b‧‧‧ underfill layer
115‧‧‧Insulation
120‧‧‧Wiring substrate
120a‧‧‧ surface electrode

圖1是表示半導體元件的一實施形態的構成的概略圖。Fig. 1 is a schematic view showing a configuration of an embodiment of a semiconductor device.

100‧‧‧半導體元件 100‧‧‧Semiconductor components

101‧‧‧積層體 101‧‧‧Layer

101a~101d‧‧‧半導體器件 101a~101d‧‧‧ semiconductor devices

102b~102d‧‧‧貫穿電極 102b~102d‧‧‧through electrode

103a~103e‧‧‧金屬凸塊 103a~103e‧‧‧Metal bumps

105‧‧‧再配線層 105‧‧‧Rewiring layer

110、110a、110b‧‧‧底部填充層 110, 110a, 110b‧‧‧ underfill layer

115‧‧‧絕緣層 115‧‧‧Insulation

120‧‧‧配線基板 120‧‧‧Wiring substrate

120a‧‧‧表面電極 120a‧‧‧ surface electrode

Claims (18)

一種硬化膜的製造方法,其包括: 對包括包含聚醯亞胺前驅物及聚苯并噁唑前驅物的至少一種與胺產生劑的組成物的層以最高加熱溫度為250℃以下的溫度進行加熱, 所述硬化膜中的胺含量為50 ppm~5,000 ppm。A method for producing a cured film, comprising: performing a layer comprising a composition comprising at least one of a polybenzazole precursor and a polybenzoxazole precursor and an amine generator at a temperature at a maximum heating temperature of 250 ° C or lower Heating, the amine content of the cured film is from 50 ppm to 5,000 ppm. 如申請專利範圍第1項所述的硬化膜的製造方法,其中所述胺產生劑為光胺產生劑及熱胺產生劑的至少一種。The method for producing a cured film according to claim 1, wherein the amine generator is at least one of a photoamine generator and a hot amine generator. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述胺產生劑為熱胺產生劑。The method for producing a cured film according to the above aspect, wherein the amine generating agent is a hot amine generating agent. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述組成物不含共軛酸的pKa8以上的胺。The method for producing a cured film according to the above aspect, wherein the composition does not contain an amine having a pKa8 or higher of a conjugate acid. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中自20℃~150℃的溫度至所述最高加熱溫度為止以1℃/min~10℃/min的升溫速度進行所述加熱。The method for producing a cured film according to the first or second aspect of the invention, wherein the temperature is from 1 ° C / min to 10 ° C / min from a temperature of from 20 ° C to 150 ° C to the maximum heating temperature. The heating. 如申請專利範圍第5項所述的硬化膜的製造方法,其中以所述升溫速度進行所述加熱,到達最高加熱溫度後,進行60分鐘~240分鐘加熱。The method for producing a cured film according to claim 5, wherein the heating is performed at the temperature increase rate, and after reaching a maximum heating temperature, heating is performed for 60 minutes to 240 minutes. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中相對於聚醯亞胺前驅物及聚苯并噁唑前驅物的合計量,所述組成物以0.01質量%~45質量%的比例包含所述胺產生劑。The method for producing a cured film according to the first or second aspect of the invention, wherein the composition is 0.01% by mass based on the total amount of the polyimide intermediate and the polybenzoxazole precursor. The ratio of 45 mass% contains the amine generator. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述聚醯亞胺前驅物由下述通式(2)表示,所述聚苯并噁唑前驅物由下述通式(3)表示; 通式(2)通式(2)中,A1 及A2 分別獨立地表示氧原子或NH,R111 表示二價的有機基,R115 表示四價的有機基,R113 及R114 分別獨立地表示氫原子或一價的有機基; 通式(3)通式(3)中,R121 表示二價的有機基,R122 表示四價的有機基,R123 及R124 分別獨立地表示氫原子或一價的有機基。The method for producing a cured film according to claim 1 or 2, wherein the polyimine precursor is represented by the following general formula (2), and the polybenzoxazole precursor is General formula (3) represents; general formula (2) In the formula (2), A 1 and A 2 each independently represent an oxygen atom or NH, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, and R 113 and R 114 each independently represent a hydrogen atom. Or a monovalent organic group; general formula (3) In the formula (3), R 121 represents a divalent organic group, R 122 represents a tetravalent organic group, and R 123 and R 124 each independently represent a hydrogen atom or a monovalent organic group. 如申請專利範圍第8項所述的硬化膜的製造方法,其中 於通式(2)中,A1 及A2 的至少一者為氧原子,且R113 及R114 中,所鄰接的A1 及A2 為氧原子的R113 及R114 表示一價的有機基;或者 於通式(3)中,R121 為直鏈狀的脂肪族基。The method for producing a cured film according to claim 8, wherein in the formula (2), at least one of A 1 and A 2 is an oxygen atom, and among the R 113 and R 114 , the adjacent A R 113 and R 114 in which 1 and A 2 are an oxygen atom represent a monovalent organic group; or in the formula (3), R 121 is a linear aliphatic group. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述最高加熱溫度為160℃~250℃。The method for producing a cured film according to the first or second aspect of the invention, wherein the maximum heating temperature is from 160 ° C to 250 ° C. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述硬化膜的胺含量為500 ppm~2,000 ppm。The method for producing a cured film according to the above aspect, wherein the cured film has an amine content of from 500 ppm to 2,000 ppm. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述組成物更包含交聯劑。The method for producing a cured film according to the above aspect, wherein the composition further comprises a crosslinking agent. 如申請專利範圍第12項所述的硬化膜的製造方法,其中所述交聯劑的分子量為100~800。The method for producing a cured film according to claim 12, wherein the crosslinking agent has a molecular weight of from 100 to 800. 如申請專利範圍第1項或第2項所述的硬化膜的製造方法,其中所述胺產生劑選自若加熱至40℃~250℃則產生胺的酸性化合物、及具有pKa1為0~4的陰離子與銨陽離子的銨鹽中的至少一種。The method for producing a cured film according to the above aspect, wherein the amine generator is selected from the group consisting of an acidic compound which generates an amine when heated to 40 ° C to 250 ° C, and has a pKa1 of 0 to 4. At least one of an anion and an ammonium salt of an ammonium cation. 如申請專利範圍第14項所述的硬化膜的製造方法,其中所述酸性化合物為若加熱至40℃~250℃則產生胺的化合物。The method for producing a cured film according to claim 14, wherein the acidic compound is a compound which generates an amine when heated to 40 ° C to 250 ° C. 如申請專利範圍第14項所述的硬化膜的製造方法,其中所述酸性化合物為銨陽離子與羧酸根陰離子的鹽。The method for producing a cured film according to claim 14, wherein the acidic compound is a salt of an ammonium cation and a carboxylate anion. 一種再配線層用層間絕緣膜的製造方法,其包括如申請專利範圍第1項至第16項中任一項所述的硬化膜的製造方法。A method for producing an interlayer insulating film for a rewiring layer, which comprises the method for producing a cured film according to any one of claims 1 to 16. 一種半導體元件的製造方法,其包括如申請專利範圍第1項至第16項中任一項所述的硬化膜的製造方法。A method of producing a semiconductor device, comprising the method for producing a cured film according to any one of claims 1 to 16.
TW105127172A 2015-08-28 2016-08-25 Method for manufacturing cured film, method for manufacturing interlayer insulating film for redistribution layer, and method for manufacturing semiconductor element TWI694101B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-169719 2015-08-28
JP2015169719 2015-08-28

Publications (2)

Publication Number Publication Date
TW201714934A true TW201714934A (en) 2017-05-01
TWI694101B TWI694101B (en) 2020-05-21

Family

ID=58187413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105127172A TWI694101B (en) 2015-08-28 2016-08-25 Method for manufacturing cured film, method for manufacturing interlayer insulating film for redistribution layer, and method for manufacturing semiconductor element

Country Status (4)

Country Link
JP (1) JP6511146B2 (en)
KR (1) KR102028939B1 (en)
TW (1) TWI694101B (en)
WO (1) WO2017038598A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110462514B (en) * 2017-03-29 2023-12-15 富士胶片株式会社 Photosensitive resin composition, cured film, laminate, method for producing cured film, and semiconductor device
KR102216172B1 (en) 2017-07-14 2021-02-15 주식회사 엘지화학 Method for manufacturing insulating film and semiconductor package
KR102089286B1 (en) 2018-01-02 2020-03-16 삼성전자주식회사 Photoresist developer composition and manufacturing method of semiconductor package using the same
US20220291585A1 (en) 2019-07-29 2022-09-15 Asahi Kasei Kabushiki Kaisha Negative photosensitive resin composition, production method for polyimide, production method for cured relief pattern, and semiconductor device
TW202128839A (en) 2019-11-21 2021-08-01 日商富士軟片股份有限公司 Pattern forming method, photocurable resin composition, layered body manufacturing method, and electronic device manufacturing method
CN116888187A (en) * 2021-02-12 2023-10-13 富士胶片株式会社 Resin composition, cured product, laminate, method for producing cured product, semiconductor device, and precursor of cyclized resin
TW202248755A (en) 2021-03-22 2022-12-16 日商富士軟片股份有限公司 Negative photosensitive resin composition, cured product, laminate, method for producing cured product, and semiconductor device
CN113416493B (en) * 2021-06-02 2022-09-20 万华化学集团电子材料有限公司 Preparation method of silicon wafer polishing composition with stable storage, composition and use method thereof
KR102627683B1 (en) 2021-08-31 2024-01-23 후지필름 가부시키가이샤 Method for producing a cured product, a method for producing a laminated body, and a method for producing a semiconductor device, and a treatment solution
WO2024010026A1 (en) * 2022-07-08 2024-01-11 富士フイルム株式会社 Resin composition, cured product, multilayer body, method for producing cured product, method for producing multilayer body, method for producing semiconductor device, and semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007056196A (en) 2005-08-26 2007-03-08 Tokyo Institute Of Technology Polyimide precursor composition, method for producing polyimide film and semiconductor device
JP4984457B2 (en) * 2005-08-26 2012-07-25 富士ゼロックス株式会社 Polyamic acid composition, polyimide endless belt, and image forming apparatus
CN102076774B (en) * 2008-04-28 2014-07-09 日本瑞翁株式会社 Radiation-sensitive resin composition, laminate and method for producing the same, and semiconductor device
TWI486335B (en) * 2011-12-29 2015-06-01 Eternal Materials Co Ltd Base generator
TWI671343B (en) * 2014-06-27 2019-09-11 日商富士軟片股份有限公司 Thermosetting resin composition, cured film, method for producing cured film, and semiconductor device

Also Published As

Publication number Publication date
KR20180034523A (en) 2018-04-04
KR102028939B1 (en) 2019-10-07
JP6511146B2 (en) 2019-05-15
WO2017038598A1 (en) 2017-03-09
JPWO2017038598A1 (en) 2018-06-28
TWI694101B (en) 2020-05-21

Similar Documents

Publication Publication Date Title
TWI730962B (en) Photosensitive resin composition, cured film, cured film manufacturing method, semiconductor element, and polyimide precursor composition manufacturing method
TWI701271B (en) Photosensitive resin composition and its manufacturing method, cured film, cured film manufacturing method, and semiconductor device
KR101913181B1 (en) Resin, composition, cured film, method of manufacturing cured film and semiconductor device
JP6606186B2 (en) Composition, cured film, method for producing cured film, method for producing semiconductor device, and semiconductor device
TWI694101B (en) Method for manufacturing cured film, method for manufacturing interlayer insulating film for redistribution layer, and method for manufacturing semiconductor element
JP6616844B2 (en) Method for producing heterocycle-containing polymer precursor, heterocycle-containing polymer precursor, and application thereof
TW201602193A (en) Thermal base generator, thermosetting resin composition, cured film, cured film manufacturing method, and semiconductor device
TW201741137A (en) Laminate, method for manufacturing laminate, semiconductor device, and method for manufacturing semiconductor device
JP6531178B2 (en) Method for producing heterocycle-containing polymer precursor material and application thereof
TW201708957A (en) Negative photosensitive resin composition, cured film, cured film production method and semiconductor device
TW201740195A (en) Photosensitive resin composition, cured film, laminate, method for manufacturing cured film, method for manufacturing laminate, and semiconductor device
TW201741772A (en) Method for manufacturing laminate and method for manufacturing semiconductor device
WO2017002860A1 (en) Negative photosensitive resin composition, cured film, cured film production method and semiconductor device