TW201714232A - Method for checking overlay measurement recipe and overlay measurement process - Google Patents

Method for checking overlay measurement recipe and overlay measurement process Download PDF

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TW201714232A
TW201714232A TW104133467A TW104133467A TW201714232A TW 201714232 A TW201714232 A TW 201714232A TW 104133467 A TW104133467 A TW 104133467A TW 104133467 A TW104133467 A TW 104133467A TW 201714232 A TW201714232 A TW 201714232A
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overlap
parameter
overlay
mark
measurement
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TW104133467A
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TWI673807B (en
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劉恩銓
吳瑞垚
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聯華電子股份有限公司
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Abstract

A method for checking an overlay measurement recipe, and an overlay measurement process are described, wherein the recipe includes a parameter concerning that the current-layer pattern of the overlay mark is at the inner or outer side of the same. The checking method include: after an overlay measurement recipe is set, determining whether the parameter is set correctly or not according to a height difference between the inner side and the outer side of the overlay mark. The process includes: if the setting of the parameter is determined to be correct, measuring overlay errors according to the overlay measurement recipe, or, if the setting of the parameter is determined to be wrong, correcting the setting of the parameter and then measuring overlay errors according to the new overlay measurement recipe.

Description

檢查重疊量測配方的方法以及重疊量測流程Method for checking overlapping measurement recipes and overlapping measurement procedures

本發明是關於積體電路製程的檢測,且特別是關於一種檢查重疊量測配方的方法,以及利用了此方法的重疊量測流程。SUMMARY OF THE INVENTION The present invention relates to the detection of integrated circuit processes, and more particularly to a method of inspecting an overlay measurement recipe, and an overlay measurement procedure utilizing the method.

在積體電路製程中,為了確保當層圖案與前層圖案的對準度,通常會在晶圓上多處形成重疊標記,每個重疊標記都包括當層圖形與前層圖形,用以測量晶圓上各處的重疊誤差。如果重疊誤差超過容許範圍,即依照測得之重疊誤差來調整曝光機臺的設定,以達到進行減少後續晶圓的重疊誤差等目的。In the integrated circuit process, in order to ensure the alignment degree between the layer pattern and the front layer pattern, overlapping marks are usually formed at multiple places on the wafer, and each overlapping mark includes a layer pattern and a front layer pattern for measurement. Overlap error across the wafer. If the overlap error exceeds the allowable range, the setting of the exposure machine is adjusted according to the measured overlap error to achieve the purpose of reducing the overlap error of subsequent wafers.

習知的重疊標記的種類包含當層圖形在內側的常態重疊標記和當層圖形在外側的反置重疊標記,二者中當層圖形的高度皆大於前層圖形的高度。圖1繪示習知常態重疊標記的示意圖,其中小圖(A)為上視圖,且小圖(B)/(C)為B-B’/C-C’剖面圖。圖2繪示習知反置重疊標記的示意圖,其中小圖(A)為上視圖,且小圖(B)/(C)為B-B’/C-C’剖面圖。在圖1、2中,基板、前層圖形、當層圖形分別以標號10、12、14來標示。The types of conventional overlapping marks include a normal overlapping mark on the inner side of the layer pattern and an inverted overlap mark on the outer side of the layer pattern, wherein the height of the layer pattern is greater than the height of the front layer pattern. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic diagram showing a conventional normal overlap mark, wherein the small image (A) is a top view and the small image (B) / (C) is a B-B' / C-C' sectional view. Fig. 2 is a schematic view showing a conventional inverted overlap mark, wherein the small image (A) is a top view, and the small image (B)/(C) is a B-B'/C-C' sectional view. In Figs. 1 and 2, the substrate, the front layer pattern, and the layer pattern are denoted by reference numerals 10, 12, and 14, respectively.

先前技術在設定重疊量測配方之後,並未檢查關於當層圖形在重疊標記內側或外側之參數的設定是否正確。如果設定錯誤,重疊量測結果就會錯誤,且根據錯誤的重疊量測結果所進行之對準調整將使重疊偏差更大。Prior art, after setting the overlap measurement recipe, did not check whether the setting of the parameters of the layer pattern inside or outside the overlap mark is correct. If the setting is wrong, the overlapping measurement results will be wrong, and the alignment adjustment based on the erroneous overlapping measurement results will make the overlap deviation larger.

本發明提供一種檢查重疊量測配方的方法,以檢查上述關於當層圖形在重疊標記內側或外側之參數的設定是否正確。The present invention provides a method of inspecting an overlay measurement recipe to check whether the setting of the parameters of the layer pattern on the inside or the outside of the overlay mark is correct.

本發明提供一種重疊量測流程,其利用了本發明之檢查重疊量測配方的方法,以確保能得到正確的重疊量測結果。The present invention provides an overlay measurement procedure that utilizes the method of the present invention for examining overlapping measurement recipes to ensure that correct overlay measurements are obtained.

本發明的檢查重疊量測配方的方法中的重疊量測配方包含關於當層圖形在重疊標記內側或外側的參數,該方法包括:於設定重疊量測配方之後,依照重疊標記內側及外側之間的高度差來判斷該參數的設定是否正確。The overlap measurement recipe in the method of inspecting the overlap measurement recipe of the present invention includes parameters regarding the inside or outside of the overlay pattern when the layer pattern is included, the method comprising: after setting the overlap measurement recipe, according to the inner and outer sides of the overlap mark The height difference is used to judge whether the setting of the parameter is correct.

在本發明的一實施例中,該參數為「當層圖形是否在重疊標記外側」,且該判斷的步驟包括:當該參數的值為是時,檢視該重疊標記內側的高度是否大於外側,如是則表示該參數的設定不正確,如否則表示該參數的設定正確;以及當該參數的值為否時,檢視該重疊標記內側的高度是否大於外側,如否則表示該參數的設定不正確,如是則表示該參數的設定正確。In an embodiment of the invention, the parameter is “When the layer pattern is outside the overlapping mark”, and the determining comprises: when the value of the parameter is YES, checking whether the height of the inner side of the overlapping mark is greater than the outer side, If yes, it means that the setting of the parameter is incorrect, if otherwise, the setting of the parameter is correct; and when the value of the parameter is no, it is checked whether the height of the inner side of the overlapping mark is greater than the outer side, if otherwise, the setting of the parameter is incorrect, If yes, the setting of this parameter is correct.

在本發明的一實施例中,當層圖形為光阻圖形。In an embodiment of the invention, the layer pattern is a photoresist pattern.

在本發明的一實施例中,前層圖形為溝渠圖形。In an embodiment of the invention, the front layer pattern is a trench pattern.

一種重疊量測流程,包括:將基板送進重疊量測系統中;設定重疊量測配方,該重疊量測配方包含關於當層圖形在重疊標記內側或外側的參數;以及使用以上檢查重疊量測配方的方法來判斷該參數的設定是否正確,如是則直接依照該重疊量測配方來量測重疊誤差,如否則更改該重疊量測配方中的該參數後再依照該重疊量測配方來量測重疊誤差。An overlay measurement process comprising: feeding a substrate into an overlay measurement system; setting an overlay measurement recipe comprising parameters relating to the inside or outside of the overlay pattern on the overlay mark; and using the above check overlap measurement The method of formulating determines whether the setting of the parameter is correct, and if so, directly measures the overlap error according to the overlapping measurement formula, if otherwise, the parameter in the overlapping measurement formula is changed, and then the measurement is measured according to the overlapping measurement formula. Overlap error.

基於上述,由於本發明之檢查重疊量測配方的方法可以檢查關於當層圖形在重疊標記內或外側之參數的設定是否正確,故能在發現不正確的情況下即時更改該參數,而得以確保得到正確的重疊量測結果。Based on the above, since the method for inspecting the overlap measurement recipe of the present invention can check whether the setting of the parameter of the layer pattern inside or outside the overlap mark is correct, it can be confirmed by changing the parameter immediately if the difference is found. Get the correct overlap measurement results.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

請再參照圖1,在常態重疊標記的情形下,由於前層圖形12位於重疊標記的外側、當層圖形14位於重疊標記的內側,而當層圖形14的高度必大於前層圖形12的高度,故重疊標記的內側的高度hi 大於外側的高度ho 。因此,如果設定重疊量測配方時將參數設定成對應常態重疊標記,但之後比較時發現重疊標記的內側的高度hi 小於外側的高度ho ,就表示先前將該參數設定錯了。反之,如果之後比較時發現重疊標記的內側的高度hi 大於外側的高度ho ,就表示先前該參數的設定對了。Referring again to FIG. 1, in the case of the normal overlapping mark, since the front layer pattern 12 is located outside the overlap mark, when the layer pattern 14 is located inside the overlap mark, the height of the layer pattern 14 must be greater than the height of the front layer pattern 12. Therefore, the height h i of the inner side of the overlap mark is larger than the height h o of the outer side. Therefore, if the parameter is set to the corresponding normal overlap mark when the overlap measurement recipe is set, but after the comparison, it is found that the height h i of the inner side of the overlap mark is smaller than the outer height h o , which means that the parameter is previously set wrong. On the other hand, if it is found later that the height h i of the inner side of the overlap mark is larger than the height h o of the outer side, it means that the setting of the previous parameter is correct.

請再參照圖2,在反置重疊標記的情形下,由於前層圖形12位於重疊標記的內側、當層圖形14位於重疊標記的外側,而當層圖形14的高度必大於前層圖形12的高度,故重疊標記的內側的高度hi 小於外側的高度ho 。因此,如果設定重疊量測配方時將參數設定成對應反置重疊標記,但之後比較時發現重疊標記的內側的高度hi 大於外側的高度ho ,就表示先前將該參數設定錯了。反之,如果之後比較時發現重疊標記的內側的高度hi 小於外側的高度ho ,就表示先前該參數的設定對了。Referring to FIG. 2 again, in the case of the inverted overlay mark, since the front layer pattern 12 is located inside the overlap mark, when the layer pattern 14 is located outside the overlap mark, and the height of the layer pattern 14 is greater than that of the front layer pattern 12 The height h, so the height h i of the inner side of the overlap mark is smaller than the height h o of the outer side. Therefore, if the parameter is set to the corresponding inverted overlap mark when the overlap measurement recipe is set, but after the comparison, it is found that the height h i of the inner side of the overlap mark is larger than the outer height h o , which means that the parameter is previously set wrong. On the other hand, if it is found later that the height h i of the inner side of the overlap mark is smaller than the height h o of the outer side, it means that the setting of the previous parameter is correct.

上述關於當層圖形在重疊標記內側或外側的參數例如為「當層圖形是否在重疊標記外側」,其設定的方式例如是在控制介面中設一個「反置重疊標記」的核取項目,核取了即是將重疊標記視為當層圖形在重疊標記外側的反置重疊標記,不核取即是將重疊標記視為當層圖形在重疊標記內側的常態重疊標記。The parameter regarding the inside or outside of the overlay pattern on the inside or outside of the overlay mark is, for example, "Whether the layer pattern is outside the overlap mark", and the setting method is, for example, a check item of "reverse overlap mark" in the control interface, the core. The overlapping mark is regarded as the inverted overlap mark of the layer pattern outside the overlap mark, and the unchecked is regarded as the normal overlap mark of the layer pattern on the inner side of the overlap mark.

另外。前層圖形12例如是基板10中的溝渠圖形,當層圖形14例如是基板10上的光阻圖形。Also. The front layer pattern 12 is, for example, a trench pattern in the substrate 10, and the layer pattern 14 is, for example, a photoresist pattern on the substrate 10.

圖3是本發明一實施例的重疊量測流程的流程圖,內含本發明一實施例之檢查重疊量測配方的方法。3 is a flow chart of an overlay measurement flow according to an embodiment of the present invention, including a method for checking an overlap measurement recipe according to an embodiment of the present invention.

請參照圖3,首先將基板送進重疊量測系統中,此為步驟300。此基板已經過當層的製程,從而形成包含前層圖形與當層圖形的常態或反置重疊標記。Referring to FIG. 3, the substrate is first fed into the overlay measurement system, which is step 300. The substrate has been subjected to a process of the layer to form a normal or inverted overlay mark comprising the front layer pattern and the layer pattern.

下一步驟302是設定重疊量測配方,此配方包含「當層圖形是否在重疊標記外側」之參數,以及其他需要之量測參數。操作者如果認為之前形成的重疊標記是反置重疊標記,即將該參數的值設定為「是」;如果認為之前形成的重疊標記是常態重疊標記,即將該參數的值設定為「否」。The next step 302 is to set an overlay measurement recipe that includes the parameters "When the layer pattern is outside the overlap mark" and other required measurement parameters. If the operator thinks that the previously formed overlap mark is an inverted overlap mark, the value of the parameter is set to "Yes"; if the previously formed overlap mark is a normal overlap mark, the value of the parameter is set to "No".

下一步驟304是取得該參數的值。當該參數的值為「是」時(反置重疊標記),即檢視該重疊標記內側的高度是否大於外側(步驟306),如是(常態重疊標記的情況:hi >ho )則表示該參數的設定不正確,而須修改重疊量測配方中的該參數(步驟308)再依照該重疊量測配方來量測重疊誤差(步驟310);如否(hi <ho )則表示該參數的設定正確,而可直接依照該重疊量測配方來量測重疊誤差。當該參數的值為「否」時(常態重疊標記),即檢視該重疊標記內側的高度是否大於外側(步驟306’),如否(反置重疊標記的情況:hi <ho )則表示該參數的設定不正確,而須修改重疊量測配方中的該參數(步驟308’)再依照該重疊量測配方來量測重疊誤差(步驟310),如是(hi >ho )則表示該參數的設定正確,而可直接依照該重疊量測配方來量測重疊誤差。The next step 304 is to take the value of this parameter. When the value of the parameter is "Yes" (reverse overlap mark), it is checked whether the height inside the overlap mark is larger than the outer side (step 306), and if it is (the case of the normal overlap mark: h i > h o ), it means The parameter setting is incorrect, and the parameter in the overlap measurement recipe must be modified (step 308) and the overlay error is measured according to the overlap measurement recipe (step 310); if not (h i <h o ), the parameter The parameters are set correctly, and the overlay error can be measured directly according to the overlap measurement recipe. When the value of the parameter is "No" (normal overlap flag), it is checked whether the height of the inner side of the overlap mark is larger than the outer side (step 306'), and if not (the case of the inverted overlap mark: h i <h o ) Indicates that the setting of the parameter is incorrect, and the parameter in the overlapping measurement formula must be modified (step 308') and the overlay error is measured according to the overlapping measurement formula (step 310), if (h i >h o ) Indicates that the parameter is set correctly, and the overlay error can be measured directly according to the overlap measurement recipe.

綜上所述,由於本發明之檢查重疊量測配方的方法可以檢查關於當層圖形在重疊標記內或外側之參數的設定是否正確,故能在發現不正確的情況下即時更改該參數,而得以確保得到正確的重疊量測結果。In summary, since the method for inspecting the overlap measurement formula of the present invention can check whether the setting of the parameter of the layer pattern in the outer or outer side of the overlap mark is correct, the parameter can be changed immediately if the difference is found, and It is ensured that the correct overlap measurement results are obtained.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧基板
12‧‧‧前層圖形
14‧‧‧當層圖形
300、302、304、306、306’、308、308’、310‧‧‧步驟
hi‧‧‧重疊標記的內側的高度
ho‧‧‧重疊標記的外側的高度
10‧‧‧Substrate
12‧‧‧ Front layer graphics
14‧‧‧Development graphics
300, 302, 304, 306, 306', 308, 308', 310 ‧ ‧ steps
h i ‧‧‧ Height of the inside of the overlapping mark
h o ‧‧‧ Height of the outside of the overlapping mark

圖1繪出習知常態重疊標記的示意圖,其中小圖(A)為上視圖,小圖(B)為B-B’剖面圖,且小圖(C)為C-C’剖面圖,並繪出本發明須求得之重疊標記內側的高度hi 及外側的高度ho 的示意圖。 圖2繪出習知反置重疊標記的示意圖,其中小圖(A)為上視圖,小圖(B)為B-B’剖面圖,且小圖(C)為C-C’剖面圖,並繪出本發明須求得之重疊標記內側的高度hi 及外側的高度ho 的示意圖。 圖3是本發明一實施例的重疊量測流程的流程圖,內含本發明一實施例之檢查重疊量測配方的方法。Figure 1 is a schematic diagram showing a conventional normal overlap mark, wherein the small image (A) is a top view, the small image (B) is a B-B' sectional view, and the small image (C) is a C-C' sectional view, and A schematic diagram of the height h i on the inside of the overlap mark and the height h o on the outside of the overlap mark to be obtained in the present invention is plotted. 2 is a schematic view showing a conventional inverted overlap mark, wherein the small image (A) is a top view, the small image (B) is a B-B' sectional view, and the small image (C) is a C-C' sectional view. A schematic diagram of the height h i on the inside of the overlap mark and the height h o on the outside of the overlap mark to be obtained in the present invention is also drawn. 3 is a flow chart of an overlay measurement flow according to an embodiment of the present invention, including a method for checking an overlap measurement recipe according to an embodiment of the present invention.

300、302、304、306、306’、308、308’、310‧‧‧步驟 300, 302, 304, 306, 306', 308, 308', 310 ‧ ‧ steps

Claims (5)

一種檢查重疊量測配方的方法,其中重疊量測配方包含關於當層圖形在重疊標記內側或外側的參數,且當層圖形的高度大於前層圖形的高度,該方法包括: 於設定重疊量測配方之後,依照該重疊標記內側及外側之間的高度差來判斷該參數的設定是否正確。A method for inspecting an overlay measurement recipe, wherein the overlap measurement recipe includes parameters regarding when the layer pattern is inside or outside the overlay mark, and when the height of the layer pattern is greater than the height of the front layer pattern, the method includes: setting the overlap measurement After the formulation, it is judged whether the setting of the parameter is correct according to the difference in height between the inside and the outside of the overlap mark. 如申請專利範圍第1項所述的檢查重疊量測配方的方法,其中該參數為當層圖形是否在重疊標記外側,且該判斷的步驟包括: 取得該參數的值; 當該參數的值為是時,檢視該重疊標記內側的高度是否大於外側的高度,如是則表示該參數的設定不正確,如否則表示該參數的設定正確;以及 當該參數的值為否時,檢視該重疊標記內側的高度是否大於外側的高度,如否則表示該參數的設定不正確,如是則表示該參數的設定正確。The method for checking an overlap measurement formula according to claim 1, wherein the parameter is whether the layer pattern is outside the overlap mark, and the determining step comprises: obtaining a value of the parameter; when the value of the parameter is If yes, check whether the height of the inner side of the overlap mark is greater than the height of the outer side. If yes, the setting of the parameter is incorrect, if otherwise, the setting of the parameter is correct; and when the value of the parameter is no, the inside of the overlap mark is checked. Whether the height is greater than the height of the outer side, if otherwise, the setting of the parameter is incorrect, and if so, the setting of the parameter is correct. 如申請專利範圍第1或2項所述的檢查重疊量測配方的方法,其中該當層圖形為光阻圖形。A method of inspecting an overlap measurement formulation as described in claim 1 or 2, wherein the layer pattern is a photoresist pattern. 如申請專利範圍第1或2項所述的檢查重疊量測配方的方法,其中該前層圖形為溝渠圖形。A method of inspecting an overlap measurement recipe as described in claim 1 or 2, wherein the front layer pattern is a trench pattern. 一種重疊量測流程,包括: 將基板送進重疊量測系統中; 設定重疊量測配方,該重疊量測配方包含關於當層圖形在重疊標記內側或外側的參數;以及 使用如申請專利範圍第1~4項中任一項所述的檢查重疊量測配方的方法來判斷該參數的設定是否正確,如是則直接依照該重疊量測配方來量測重疊誤差,如否則更改該重疊量測配方中的該參數後再依照該重疊量測配方來量測重疊誤差。An overlapping measurement process comprising: feeding a substrate into an overlay measurement system; setting an overlap measurement recipe, the overlay measurement formula including parameters relating to the inner or outer side of the overlay pattern on the overlay mark; and using the patent application scope The method for checking the overlap measurement formula according to any one of items 1 to 4 to determine whether the parameter setting is correct, and if so, directly measuring the overlap error according to the overlap measurement formula, such as otherwise changing the overlap measurement formula. The parameter in the measurement is then used to measure the overlay error according to the overlap measurement recipe.
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CN112051051A (en) * 2019-06-06 2020-12-08 上银科技股份有限公司 Linear transmission device and identification method thereof
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TWI760606B (en) * 2018-05-22 2022-04-11 美商科磊股份有限公司 Asymmetric overlay mark for overlay measurement
CN112051051A (en) * 2019-06-06 2020-12-08 上银科技股份有限公司 Linear transmission device and identification method thereof

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